2025/07/31 更新

写真a

セキグチ　タケハル
関口　武治
SEKIGUCHI TAKEHARU
所属
工学院 研究員
職名
研究員
外部リンク

学位

  • 博士(理学)

研究キーワード

  • 量子情報処理プロジェクト

  • Quantum Information Processing Project

経歴

  • 京都大学   細胞－物質統合システム拠点   特任准教授

    2014年10月 - 現在

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  • 京都大学 iCeMS   特任准教授

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論文

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講演・口頭発表等

  • Fabrication of a regular array of atomic silicon wires on silicon 国際会議

    Takeharu Sekiguchi, Shunji Yoshida, Kohei M. Itoh

    Materials Research Society Symposium Proceedings  2005年8月 

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    記述言語：英語  

    We report on the experimental realization of atomically straight, single wires of Si atoms on a Si surface. The Si wires were formed by solid-source molecular beam epitaxy (MBE) on a specific substrate prepared by a thermal treatment of a vicinal Si(111) wafer. The structures of the substrate and the atomic wire were investigated by scanning tunneling microscopy (STM). The substrate consists of an array of atomically straight step edges with a uniform structure serendipitously suitable for self-assembly of the atomic wires. The isotopic version of this structure - single lines of 29Si on 28Si- is expected to be the most basic building block for the all-silicon quantum computer [1], which utilizes the nuclear spins of individual Si isotopes as quantum bits (qubits). © 2005 Materials Research Society.

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  • Preparation of the atomically straight step-edge Si (111) substrates as templates for nanostructure formation 国際会議

    Shunji Yoshida, Takeharu Sekiguchi, Kohei M. Itoh

    Materials Research Society Symposium Proceedings  2005年8月 

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    記述言語：英語  

    We report on the experimental discovery that the distribution of kinks along steps on vicinal Si(111) surfaces depends on the direction of the dc current passed along the steps for resistive annealing. The as-cleaned Si(111) surface miscut ∼1° towards [1̄1̄2] has a small (<3°) unavoidable azimuthal deviation, which produces a number of kinks along the step-edges. When the azimuthal misorientation is from [1̄1̄2] towards [1̄10] ([11̄0]), dc current flowing in the direction [1̄10] ([11̄0]) climbing up the kinks straightens the step-edges as opposed to the current flowing in the opposite [11̄0] ([1̄10]) direction. During annealing around 800°C, the dc current in the direction climbing up the kinks straightens the steps. The up-climbing current direction transports and concentrates the kinks in a region outside the template area, leaving a kink-free atomic step-edge region as an ideal template for a variety of nanostructure formations. The straight step edges produced in this manner have uniform atomic configuration known as U(2, 0). © 2005 Materials Research Society.

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  • Self-Assembly of Parallel Atomic Wires and Periodic Nano-Dots of Silicon and Germanium on a Vicinal Silicon (111) Surface 招待

    2005 Mater. Res. Soc. Fall Meeting, Boston, USA.  2005年11月 

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    記述言語：英語   会議種別：口頭発表（招待・特別）  

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  • Self-assembled Si and Ge nanostructures on atomic straight Si steps 招待 国際会議

    VCIAN-2011 (2011 Villa Conference on Interaction Among Nanostructures), Las Vegas, NV, USA.  2011年4月 

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    記述言語：英語  

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  • Self-Assembly of Parallel Atomic Wires and Periodic Nano-Dots of Silicon and Germanium on a Vicinal Silicon (111) Surface 招待 国際会議

    The 28th International Conference on the Physics of Semiconductors, Vienna, Austria.  2006年7月 

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    記述言語：英語   会議種別：口頭発表（招待・特別）  

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  • Host isotope mass effects on hyperfine interaction of a shallow donor in silicon 招待 国際会議

    T. Sekiguchi, S. Tojo, R. Mori, A. M. Tyryshkin, J. J, L. Morton, M. L. W. Thewalt, E. Abe, S. Lyon, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, J. W. Ager, E. E. Haller, K. M. Itoh

    Silicon Donor Qubit Express Workshop, London, UK  2013年2月 

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    記述言語：英語   会議種別：口頭発表（招待・特別）  

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産業財産権

  • シリコン基板の加工方法

    伊藤 公平, 関口 武治, 吉田 俊治

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    出願人：学校法人慶應義塾, 独立行政法人科学技術振興機構

    出願番号：特願2004-022816  出願日：2004年1月

    公開番号：特開2005-217236  公開日：2005年8月

    J-GLOBAL

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