Updated on 2025/07/31

写真a

 
SEKIGUCHI TAKEHARU
 
Organization
School of Engineering Researcher
Title
Researcher
External link

Degree

  • Ph. D

Research Interests

  • 量子情報処理プロジェクト

  • Quantum Information Processing Project

Research History

  • Kyoto University   Institute for Integrated Cell-Material Sciences   Specially Appointed Associate Professor

    2014.10

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  • Kyoto University Dept. Applied Physics and Physico-Informatics   Research Associate Professor

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Papers

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Presentations

  • Fabrication of a regular array of atomic silicon wires on silicon International conference

    Takeharu Sekiguchi, Shunji Yoshida, Kohei M. Itoh

    Materials Research Society Symposium Proceedings  2005.8 

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    Language：English  

    We report on the experimental realization of atomically straight, single wires of Si atoms on a Si surface. The Si wires were formed by solid-source molecular beam epitaxy (MBE) on a specific substrate prepared by a thermal treatment of a vicinal Si(111) wafer. The structures of the substrate and the atomic wire were investigated by scanning tunneling microscopy (STM). The substrate consists of an array of atomically straight step edges with a uniform structure serendipitously suitable for self-assembly of the atomic wires. The isotopic version of this structure - single lines of 29Si on 28Si- is expected to be the most basic building block for the all-silicon quantum computer [1], which utilizes the nuclear spins of individual Si isotopes as quantum bits (qubits). © 2005 Materials Research Society.

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  • Preparation of the atomically straight step-edge Si (111) substrates as templates for nanostructure formation International conference

    Shunji Yoshida, Takeharu Sekiguchi, Kohei M. Itoh

    Materials Research Society Symposium Proceedings  2005.8 

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    We report on the experimental discovery that the distribution of kinks along steps on vicinal Si(111) surfaces depends on the direction of the dc current passed along the steps for resistive annealing. The as-cleaned Si(111) surface miscut ∼1° towards [1̄1̄2] has a small (<3°) unavoidable azimuthal deviation, which produces a number of kinks along the step-edges. When the azimuthal misorientation is from [1̄1̄2] towards [1̄10] ([11̄0]), dc current flowing in the direction [1̄10] ([11̄0]) climbing up the kinks straightens the step-edges as opposed to the current flowing in the opposite [11̄0] ([1̄10]) direction. During annealing around 800°C, the dc current in the direction climbing up the kinks straightens the steps. The up-climbing current direction transports and concentrates the kinks in a region outside the template area, leaving a kink-free atomic step-edge region as an ideal template for a variety of nanostructure formations. The straight step edges produced in this manner have uniform atomic configuration known as U(2, 0). © 2005 Materials Research Society.

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  • Self-Assembly of Parallel Atomic Wires and Periodic Nano-Dots of Silicon and Germanium on a Vicinal Silicon (111) Surface Invited

    T. Sekiguchi, S. Yoshida, K. M. Itoh

    2005 Mater. Res. Soc. Fall Meeting, Boston, USA.  2005.11 

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    Language：English   Presentation type：Oral presentation (invited, special)  

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  • Self-assembled Si and Ge nanostructures on atomic straight Si steps Invited International conference

    T. Sekiguchi, K. M. Itoh

    VCIAN-2011 (2011 Villa Conference on Interaction Among Nanostructures), Las Vegas, NV, USA.  2011.4 

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    Language：English  

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  • Self-Assembly of Parallel Atomic Wires and Periodic Nano-Dots of Silicon and Germanium on a Vicinal Silicon (111) Surface Invited International conference

    T. Sekiguchi, S. Yoshida, Y. Shiren, K. M. Itoh, J. Mysliveček, B. Voigtländer

    The 28th International Conference on the Physics of Semiconductors, Vienna, Austria.  2006.7 

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    Language：English   Presentation type：Oral presentation (invited, special)  

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  • Host isotope mass effects on hyperfine interaction of a shallow donor in silicon Invited International conference

    T. Sekiguchi, S. Tojo, R. Mori, A. M. Tyryshkin, J. J, L. Morton, M. L. W. Thewalt, E. Abe, S. Lyon, H. Riemann, N. V. Abrosimov, P. Becker, H.-J. Pohl, J. W. Ager, E. E. Haller, K. M. Itoh

    Silicon Donor Qubit Express Workshop, London, UK  2013.2 

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    Language：English   Presentation type：Oral presentation (invited, special)  

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Industrial property rights

  • シリコン基板の加工方法

    伊藤 公平, 関口 武治, 吉田 俊治

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    Applicant：学校法人慶應義塾, 独立行政法人科学技術振興機構

    Application no：特願2004-022816  Date applied：2004.1

    Announcement no：特開2005-217236  Date announced：2005.8

    J-GLOBAL

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