Updated on 2026/08/14

写真a

 
MACHIDA KATSUYUKI
 
Organization
Institute of Integrated Research Laboratory for Future Interdisciplinary Research of Science and Technology Specially Appointed Professor
Title
Specially Appointed Professor
External link

Degree

  • 博士（工学）

Research Areas

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

Research History

  • Tokyo Institute of Technology   Specially Appointed Professor

    2017.4

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  • Tokyo Institute of Technology

    2010.4 - 2016.3

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  • NTT アドバンステクノロジ

    2007.4 - 2017.3

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  • NTT Laboratories

    1981.4 - 2007.3

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Papers

  • Annealing effects on effective Young’s modulus of Ti/Au multi-layered microcantilevers

    Tatsuhiko Mori, Tomoyuki Kurioka, Shunkai Watanabe, Chun-Yi Chen, Tso-Fu Mark Chang, Katsuyuki Machida, Hiroyuki Ito, Yoshihiro Miyake, Masato Sone

    Micro and Nano Engineering   32   100367 - 100367   2026.9

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    Publishing type：Research paper (scientific journal)   Publisher：Elsevier BV  

    DOI： 10.1016/j.mne.2026.100367

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  • Single-axis gold micro-electro-mechanical-systems capacitive accelerometer with circular proof-mass for suppressing warpage

    Masako Okumura, Tomoyuki Kurioka, Torauto Yamada, Tatsuhiko Mori, Katsuyuki Machida, Chun-Yi Chen, Tso-Fu Mark Chang, Hiroyuki Ito, Yoshihiro Miyake, Masato Sone

    Japanese Journal of Applied Physics   2026.3

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.35848/1347-4065/ae4687

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  • Effect of Supercritical Carbon Dioxide Emulsification on Nickel Electroplating in Sulfamate Baths at Various CO2 Volume Fractions

    Wending Hou, Chun-Yi Chen, Tomoyuki Kurioka, Katsuyuki Machida, Hiroyuki Ito, Yoshihiro Miyake, Tso-Fu Mark Chang, Masato Sone

    Journal of The Electrochemical Society   2026.2

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1149/1945-7111/ae3b15

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  • Evaluation of annealing effects on the deformation of Ti/Au multi-layered micro-cantilevers

    Ryosuke Miyai, Tomoyuki Kurioka, Chun-Yi Chen, Tso-Fu Mark Chang, Katsuyuki Machida, Hiroyuki Ito, Yoshihiro Miyake, Masato Sone

    Micro and Nano Engineering   100333 - 100333   2025.11

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    Publishing type：Research paper (scientific journal)   Publisher：Elsevier BV  

    DOI： 10.1016/j.mne.2025.100333

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  • Evaluation of the Annealing Induced Warpage of an Electrodeposited-Au Octagonal Proof Mass with a Ti/Au Multi-Layered Structure toward MEMS Capacitive Accelerometers

    Tatsuhiko Mori, Tomoyuki Kurioka, Chun-Yi Chen, Tso-Fu Mark Chang, Katsuyuki Machida, Hiroyuki Ito, Yoshihiro Miyake, Masato Sone

    Journal of The Electrochemical Society   2025.10

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    Publishing type：Research paper (scientific journal)   Publisher：The Electrochemical Society  

    Abstract

    Annealing effects of the fabrication process on the concave warpage deformation of an electrodeposited-Au octagonal proof mass with a Ti/Au multi-layered structure are reported. The octagonal proof mass is fabricated by using multi-layer metal technology, which consists of the gold electrodeposition and sacrificial film formation. The annealing at and below 150 °C hardly deforms the octagonal proof mass, whereas the annealing at 200 °C induces its concave warpage deformation, and the increase in the annealing temperature causes greater deformation. On the other hand, even after the annealing at 300 °C, the warpage of the octagonal proof mass remains 1% of the length from the center to the periphery of the octagonal proof mass. Also, the measured warpage is found to be approximately one-seventh that of the electrodeposited-Au square proof mass with the almost same size. These results reveal that the octagonal shape is advantageous in the suppression of the warpage deformation of the proof mass.

    DOI： 10.1149/1945-7111/ae11d5

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    Other Link： https://iopscience.iop.org/article/10.1149/1945-7111/ae11d5/pdf

  • Void-Free Smooth Nickel Electrodeposition with Supercritical Carbon Dioxide Emulsified Sulfamate Bath in High Current Density

    Wending Hou, Chun-Yi Chen, Tomoyuki Kurioka, Katsuyuki Machida, Hiroyuki Ito, Yoshihiro Miyake, Tso-Fu Mark Chang, Masato Sone

    Journal of The Electrochemical Society   2025.9

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    Publishing type：Research paper (scientific journal)   Publisher：The Electrochemical Society  

    Abstract

    Supercritical carbon dioxide (scCO₂) emulsions are used in the electrodeposition of nickel from a nickel sulfamate bath at current densities ranging from 0.03 to 0.36 A/cm². ScCO₂ emulsions are formed by mixing scCO₂, surfactants, and the aqueous nickel sulfamate bath. Nickel films obtained by electrodeposition with scCO₂ emulsions (ESCE) were compared to those produced by conventional electrodeposition (CONV). The use of scCO₂ emulsions improves the quality of the nickel film, even at high current densities up to 0.36 A/cm², as evidenced by reduced grain size and decreased surface roughness. The Faradaic efficiency (FE) of the deposition reaction by CONV gradually decreased from 95% to 90% as the current density increased from 0.03 to 0.36 A/cm², while the FE by ESCE decreased from 82% to 70%. The lowered FE is suggested to result from promoted hydrogen evolution due to the introduction of scCO₂ emulsions. Grain refinement and an increased Vickers hardness value of up to 780 HV are attributed to the periodic plating characteristic mechanism.

    DOI： 10.1149/1945-7111/ae05cf

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    Other Link： https://iopscience.iop.org/article/10.1149/1945-7111/ae05cf/pdf

  • Design and evaluation of a dual-detection range single-axis MEMS capacitive accelerometer with gold proof-mass structure for suppressed warpage

    Devi Srujana Tenneti, Chihaya Mukaide, Kisuke Miyado, Torauto Yamada, Katsuyuki Machida, Tomoyuki Kurioka, Tso-Fu Mark Chang, Masato Sone, Yoshihiro Miyake, Hiroyuki Ito

    Japanese Journal of Applied Physics   2025.4

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.35848/1347-4065/adc3a0

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  • Application of high-sensitivity acceleration sensor detecting micro-mechanomyogram and deep learning for Parkinson’s disease classification

    Jingyu Quan, Hirotaka Uchitomi, Ryo Shigeyama, Chenguang Gao, Taiki Ogata, Akira Inaba, Satoshi Orimo, Hiroyuki Ito, Katsuyuki Machida, Masato Sone, Yoshihiro Miyake

    Scientific Reports   14 ( 1 )   2024.10

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    Publishing type：Research paper (scientific journal)   Publisher：Springer Science and Business Media LLC  

    DOI： 10.1038/s41598-024-74526-x

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    Other Link： https://www.nature.com/articles/s41598-024-74526-x

  • Simultaneous Necking and Barreling Deformation Behaviors in Bending of Single-Crystal Gold Micro-Cantilever

    Kazuya Fujita, Kosuke Suzuki, Keisuke Asano, Chun-Yi Chen, Tomoyuki Kurioka, Katsuyuki Machida, Hiroyuki Ito, Yoshihiro Miyake, Masato Sone, Tso-Fu Mark Chang

    Materials   17 ( 16 )   4054 - 4054   2024.8

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    Publishing type：Research paper (scientific journal)   Publisher：MDPI AG  

    Necking and barreling deformation behaviors occurred simultaneously during the bending test of a single-crystal gold micro-cantilever (sample A) with the loading direction parallel to the [1-10] orientation and the neutral plane parallel to the [110] orientation. In contrast, for another single-crystal gold micro-cantilever, sample B, with the loading direction aligned parallel to the [0.37 −0.92 0.05] orientation and the neutral plane parallel to the [0.54 0.28 0.78] orientation, predominant slip band deformation was noted. Sample A exhibited activation of four slip systems, whereas sample B demonstrated activity in only a single-slip system. This difference suggests that the presence of multiple slip systems contributes to the concurrent occurrence of necking and barreling deformations. Furthermore, variations in the thickness of the micro-cantilevers resulted in observable strengthening, indicating that the effect of sample size is intricately linked to the geometry of the cross-section, which we have termed the “sample geometry effect”.

    DOI： 10.3390/ma17164054

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  • Dependence of Structural Design on Effective Young's Modulus of Ti/Au Multi-layered Micro-cantilevers

    Shunkai Watanabe, Tomoyuki Kurioka, Chun-Yi Chen, Tso-Fu Mark Chang, Akira Onishi, Parthojit Chakraborty, Katsuyuki Machida, Hiroyuki Ito, Yoshihiro Miyake, Masato Sone

    Micro and Nano Engineering   23   100249 - 100249   2024.6

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    Publishing type：Research paper (scientific journal)   Publisher：Elsevier BV  

    DOI： 10.1016/j.mne.2024.100249

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  • Cross-sectional geometry effect on bending strength of gold micro-cantilever with trapezoidal cross-section

    Ryohei Hori, Kazuya Fujita, Chun Yi Chen, Tomoyuki Kurioka, Jhen-Yang Wu, Tso-Fu Mark Chang, Katsuyuki Machida, Hiroyuki Ito, Yoshihiro Miyake, Masato Sone

    Micro and Nano Engineering   23   100259 - 100259   2024.6

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    Publishing type：Research paper (scientific journal)   Publisher：Elsevier BV  

    DOI： 10.1016/j.mne.2024.100259

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  • Effects of the strain rate in compression of electrodeposited gold micro-pillars toward the design of MEMS components Reviewed

    Syota Kanno, Taro Omura, Tomoyuki Kurioka, Chun-Yi Chen, Parthojit Chakraborty, Katsuyuki Machida, Hiroyuki Ito, Yoshihiro Miyake, Masato Sone, Tso-Fu Mark Chang

    Micro and Nano Engineering   100254   2024.4

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    Language：English  

    DOI： 10.1016/j.mne.2024.100254

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  • Warpage Study of Electrodeposited-Au Micro-Components with Ti/Au Multi-Layered Structures toward MEMS Applications Reviewed

    Taro Omura, Tomoyuki Kurioka, Chun-Yi Chen, Tso-Fu Mark Chang, Akira Onishi, Parthojit Chakraborty, Katsuyuki Machida, Hiroyuki Ito, Yoshihiro Miyake, Masato Sone

    Journal of The Electrochemical Society   2024.3

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1149/1945-7111/ad2ba9

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  • Serpentine spring design technique for high sensitivity MEMS capacitive accelerometer fabricated by gold multi-layer metal technology

    Kisuke Miyado, Devi Srujana Tenneti, Akira Onishi, Katsuyuki Machida, Tomoyuki Kurioka, Tso-Fu Mark Chang, Masato Sone, Yoshihiro Miyake, Hiroyuki Ito

    Japanese Journal of Applied Physics   63 ( 4 )   04SP23 - 04SP23   2024.3

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    Publishing type：Research paper (scientific journal)   Publisher：IOP Publishing  

    Abstract

    This paper describes a design technique for serpentine spring with the edge span beam L/2. In order to improve design accuracy, we investigate the key structure parameters influenced by the fabrication process for MEMS device, comparing finite element analysis (FEA) and analytical models. It is found that the Fedder model as the analytical model is suitable for the spring constant characteristics of FEA with the edge span beam L/2. Further, the thickness and width are found to be the key structure parameters and the dominant factor of variation regarding the serpentine spring. Based on the analysis, we propose a spring design technique. The experimental results show that the variation between the measured data of 4.46 N m−1 and the design value of 4.15 N m−1 was 7.5%, satisfying the target of ±10%. It is confirmed that the proposed technique can establish the serpentine spring for high sensitivity gold proof-mass MEMS accelerometers.

    DOI： 10.35848/1347-4065/ad2913

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    Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/ad2913/pdf

  • Clarification of geometric effects on long-term structural stability of Ti/au multi-layered Micro-cantilevers

    Ryosuke Miyai, Tomoyuki Kurioka, Chun-Yi Chen, Tso-Fu Mark Chang, Akira Onishi, Parthojit Chakraborty, Katsuyuki Machida, Hiroyuki Ito, Yoshihiro Miyake, Masato Sone

    Micro and Nano Engineering   100244 - 100244   2024.3

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    Publishing type：Research paper (scientific journal)   Publisher：Elsevier BV  

    DOI： 10.1016/j.mne.2024.100244

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  • Impurity Analysis of Electroplated Gold Components with Multi-Layered Structures by Thermal Desorption Spectrometry toward Application in Gold Micro Electro Mechanical System Capacitive Accelerometers Reviewed

    Takumi Akiyama, Tomoyuki Kurioka, Chun-Yi Chen, Tso-Fu Mark Chang, Parthojit Chakraborty, Katsuyuki Machida, Hiroyuki Ito, Yoshihiro Miyake, Masato Sone

    Micro and Nano Engineering   21   100226 - 100226   2023.9

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Elsevier BV  

    DOI： 10.1016/j.mne.2023.100226

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  • Correlation of Sample Geometry and Grain Size in Micro-Bending of Electrodeposited Polycrystalline Gold

    Kosuke Suzuki, Yiming Jiang, Ryohei Hori, Ken Hashigata, Tomoyuki Kurioka, Chun-Yi Chen, Tso-Fu Mark Chang, Parthojit Chakraborty, Katsuyuki Machida, Hiroyuki Ito, Yoshihiro Miyake, Masato Sone

    Materials Today Communications   106072 - 106072   2023.4

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    Publishing type：Research paper (scientific journal)   Publisher：Elsevier BV  

    DOI： 10.1016/j.mtcomm.2023.106072

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  • Gold Single-Axis Differential Capacitive MEMS Accelerometer With Proof-Mass Position Control Electrode Fabricated by Post-CMOS Technology Reviewed

    Akira Onishi, Kisuke Miyado, Devi Srujana Tenneti, Katsuyuki Machida, Parthojit Chakraborty, Masato Sone, Yoshihiro Miyake, Hiroyuki Ito

    IEEE 2023 INERTIAL   2023.3

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1109/INERTIAL56358.2023.10103943

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  • Detection system for Legionella bacteria using photogate-type optical sensor

    Yuto Honda, Ryosuke Ichikawa, Yong Joon Choi, Kensuke Murakami, Kazuhiro Takahashi, Toshihiko Noda, Kazuaki Sawada, Hiromu Ishii, Katsuyuki Machida, Hiroyuki Ito, Satoshi Miyahara, Yasuhiko Nikaido, Mitsumasa Saito

    Japanese Journal of Applied Physics   61 ( SD )   SD1010 - SD1010   2022.6

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    Publishing type：Research paper (scientific journal)   Publisher：IOP Publishing  

    Abstract

    This study describes a bacterial sensing system using a photogate-type fluorescence sensor for the purpose of identifying Legionella bacteria, which are known to emit different fluorescence for each bacterial species when irradiated with UV excitation light. First a weak-photocurrent measurement system in combination with a photogate-type optical sensor and a circuit board which was mounted with a current–voltage converter, an analog-to-digital converter, and a microcomputer was fabricated. Then weak-light measurement was performed by simulating the bacterial fluorescence of Legionella. A difference in the current ratio generated in the sensor was found depending on the wavelength of the LED light source, showing that the system works as a spectrometer. Finally, the system was applied to measure the fluorescence of the species of Legionella dumoffii and Legionella erythra and each species of Legionella was identified just by obtaining the current ratio.

    DOI： 10.35848/1347-4065/ac5a25

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    Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/ac5a25/pdf

  • Simplified Analytical Damping Constant Model for Design of MEMS Capacitive Accelerometer with Gold Perforated Proof-mass Structure Reviewed

    Kohei Shibata, Akihiro Uchiyama, Akira Onishi, Katsuyuki Machida, Shin-ichi Iida, Toshifumi Konishi, Masato Sone, Yoshihiro Miyake, Hiroyuki Ito

    IEEE Sensors Journal   22 ( 15 )   14769 - 14778   2022.6

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Institute of Electrical and Electronics Engineers (IEEE)  

    DOI： 10.1109/JSEN.2022.3184340

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  • Effect of current density on micro-mechanical property of electrodeposited gold film evaluated by micro-compression

    Taro Omura, Chun-Yi Chen, Tso-Fu Mark Chang, Daisuke Yamane, Hiroyuki Ito, Katsuyuki Machida, Kazuya Masu, Masato Sone

    Surface and Coatings Technology   436   128315 - 128315   2022.4

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    Publishing type：Research paper (scientific journal)   Publisher：Elsevier BV  

    DOI： 10.1016/j.surfcoat.2022.128315

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  • Suppressed drift and low-noise sensor module with a single-axis gold proof-mass MEMS accelerometer for micro muscle sound measurement Reviewed

    Akira Onishi, Kohei Shibata, Akihiro Uchiyama, Katsuyuki Machida, Taiki Ogata, Noboru Ishihara, Hirotaka Uchitomi, Tso-Fu Mark Chang, Masato Sone, Yoshihiro Miyake, Hiroyuki Ito

    Japanese Journal of Applied Physics   2022.3

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    Publishing type：Research paper (scientific journal)   Publisher：IOP Publishing  

    Abstract

    This paper describes a highly sensitive microelectromechanical systems (MEMS) accelerometer sensor module to measure micro muscle sounds. Regarding the drift mechanism, we focus on charged particles based on residual water related to MEMS fabrication. Based on temperature programmed desorption (TPD) analysis and electrical experiments, it is clarified that the drift is caused by negatively charged OH− and is suppressed by vacuum packaging. The noise floor can be reduced by the improved sensitivity of the MEMS accelerometer. The developed MEMS accelerometer can realize the sensitivity of 1157.0 fF/G and Brownian noise of 149.0 nG/√Hz. The developed sensor module consisting of the developed MEMS accelerometer and the capacitance to digital converter (CDC) can achieve a noise floor of 26.7 μG/√Hz without any obvious drifts, establishing the target value of less than 50 μG/√Hz. Therefore, it is confirmed that the developed sensor module can detect micro muscle sounds without contracting a muscle in the frequency range of 20–40 Hz.

    DOI： 10.35848/1347-4065/ac5b25

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    Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/ac5b25/pdf

  • Micro-Mechanical Property Evaluation of Gold-Nickel Alloys Toward Design of MEMS Components

    Miyake Yoshihiro, Machida Katsuyuki, Sone Masato, Akiyama Takumi, Yamane Daisuke, Chien Yu-An, Chang Tso Fu Mark, Chen Chun-Yi, Ito Hiroyuki

    JSAP Annual Meetings Extended Abstracts   2022.1   2332 - 2332   2022.2

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    Language：Japanese   Publisher：The Japan Society of Applied Physics  

    DOI： 10.11470/jsapmeeting.2022.1.0_2332

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  • Cross-sectional shape effect of mechanical properties of micro-cantilevers made of Au single crystal

    Chen Chun-Yi, Fujita Kazuya, Chang Tso-Fu Mark, Ito Hiroyuki, Machida Katsuyuki, Miyake Yoshihiro, Sone Masato, Hori Ryohei

    JSAP Annual Meetings Extended Abstracts   2022.1   2331 - 2331   2022.2

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    Language：Japanese   Publisher：The Japan Society of Applied Physics  

    DOI： 10.11470/jsapmeeting.2022.1.0_2331

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  • Micro-Bending of Single Crystal Gold and the Sample Geometry Effect

    Fujita Kazuya, Suzuki Kosuke, Chen Chun-Yi, Chang Tso-Fu Mark, Ito Hiroyuki, Yamane Daisuke, Machida Katsuyuki, Masu Kazuya, Sone Masato

    JSAP Annual Meetings Extended Abstracts   2021.2   2581 - 2581   2021.8

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    Language：Japanese   Publisher：The Japan Society of Applied Physics  

    DOI： 10.11470/jsapmeeting.2021.2.0_2581

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  • A MEMS ACCELEROMETER with A SINGLE AXIS TWO PROOF MASSES for A WIDE DETECTION RANGE

    Akihiro Uchiyama, Takashi Ichikawa, Kohei Shibata, Shin-Ichi Iida, Sangyeop Lee, Noboru Ishihara, Katsuyuki MacHida, Kazuya Masu, Hiroyuki Ito

    21st International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2021   112 - 115   2021.6

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    Language：English   Publishing type：Research paper (international conference proceedings)   Publisher：Institute of Electrical and Electronics Engineers Inc.  

    DOI： 10.1109/Transducers50396.2021.9495507

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  • Effective Young’s Modulus of Complex Three Dimensional Multilayered Ti/Au Micro-Cantilevers Fabricated by Electrodeposition and the Temperature Dependency Invited Reviewed

    Hitomi Watanabe, Tso-Fu Mark Chang, Michael Schneider, Ulrich Schmid, Chun-Yi Chen, Shinichi Iida, Daisuke Yamane, Hiroyuki Ito, Katsuyuki Machida, Kazuya Masu, Masato Sone

    Electrochem   2021.4

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.3390/electrochem2020015

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  • A 3-D Capacitive-Detection Electrode for a Single Gold Proof-Mass Three-Axis MEMS Accelerometer Reviewed

    Takashi Ichikawa, Akihiro Uchiyama, Kohei Shibata, Shinichi Iida, Sangyeop Lee, Noboru Ishihara, Katsuyuki Machida, Kazuya Masu, Hiroyuki Ito

    INERTIAL 2021 - 8th IEEE International Symposium on Inertial Sensors and Systems, Proceedings   2021.3

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    Publishing type：Research paper (international conference proceedings)  

    DOI： 10.1109/INERTIAL51137.2021.9430475

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  • A Highly Sensitive MEMS Accelerometer Module for Measuring Micro Muscular Sounds

    Hiroyuki Ito, Katsuyuki MacHida, Noboru Ishihara, Yoshihiro Miyake, Kazuya Masu

    ECS Transactions   104 ( 4 )   83 - 91   2021

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    Language：English   Publishing type：Research paper (international conference proceedings)   Publisher：IOP Publishing Ltd  

    DOI： 10.1149/10404.0083ecst

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  • Sensing Legionella by photogate-type fluorescence sensor: Application to Legionella dumoffii Reviewed

    Sawako Tanaka, Young Joon Choi, Makoto Ishida, Kazuaki Sawada, Hiromu Ishii, Katsuyuki Machida, Yasuhiko Nikaido, Mitsumasa Saito, Shin ichi Yoshida

    Electronics and Communications in Japan   103 ( 11-12 )   83 - 89   2020.12

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1002/ecj.12269

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  • Effects of Sample Geometry on Micro-Mechanical Property of Single Crystal Gold for Applications in Microelectronics Reviewed

    Kazuya Fujita, Kosuke Suzuki, Chun-Yi Chen, Tso-Fu Mark Chang, Hiroyuki Ito, Katsuyuki Machida, Kazuya Masu, Masato Sone

    ECS Meeting Abstracts   2020.11

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1149/MA2020-02653307mtgabs

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  • Effects of Sample Geometry and Grain Size on Mechanical Property of Electrodeposited Gold Evaluated By Micro-Bending Test Reviewed

    Kosuke Suzuki, Yu-An Chien, Ken Hashigata, Keisuke Asano, Chun-Yi Chen, Tso-Fu Mark Chang, Daisuke Yamane, Hiroyuki Ito, Katsuyuki Machida, Kazuya Masu, Masato Sone

    ECS Meeting Abstracts   2020.11

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1149/MA2020-02653306mtgabs

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  • Co-Electrodeposition of Au–TiO2 Nanocomposite and the Micro-Mechanical Properties

    Yu-An Chien, Tso-Fu Mark Chang, Chun-Yi Chen, Daisuke Yamane, Hiroyuki Ito, Katsuyuki Machida, Kazuya Masu, Masato Sone

    Electrochem   1 ( 4 )   388 - 393   2020.11

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    Publishing type：Research paper (scientific journal)   Publisher：MDPI AG  

    Strengthening of electrodeposited Au-based materials is achieved by co-electrodeposition with TiO2 nanoparticles dispersed in a sulfide-based gold electrolyte. TiO2 content in the composite film is adjusted by concentration of the TiO2 in the gold electrolyte. Effects of the TiO2 content on surface morphology, crystalline structure and microstructure of the composite film are investigated. Mechanical properties of the Au–TiO2 composite films are evaluated by micro-Vickers hardness and micro-compression tests. The hardness increases from 135 to 207 HV when the TiO2 content is increased from 0 to 2.72 wt%. Specimens used in the micro-compression test are micro-pillars fabricated from the composite film, and the yield strength reaches 0.84 GPa by incorporating 2.72 wt% TiO2 into the film.

    DOI： 10.3390/electrochem1040025

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  • Sample geometry effect on mechanical property of gold micro-cantilevers by micro-bending test

    Kosuke Suzuki, Tso Fu Mark Chang, Ken Hashigata, Keisuke Asano, Chun Yi Chen, Takashi Nagoshi, Daisuke Yamane, Hiroyuki Ito, Katsuyuki Machida, Kazuya Masu, Masato Sone

    MRS Communications   10 ( 3 )   434 - 438   2020.9

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1557/mrc.2020.38

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  • A 100-nG/√ Hz-Level Single Au Proof-Mass 3-Axis MEMS Accelerometer with Pillar-Shaped electrodes

    Takashi Ichikawa, Ken Atsumi, Tatsuya Koga, Hiroyuki Ito, Shin Ichi Iida, Noboru Ishihara, Daisuke Yamane, Katsuyuki Machida, Kazuya Masu

    2020 Symposium on Design, Test, Integration and Packaging of MEMS and MOEMS, DTIP 2020   2020.6

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    Publishing type：Research paper (international conference proceedings)  

    DOI： 10.1109/DTIP51112.2020.9139134

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  • Sensing legionella by photogate-type fluorescence sensor

    Sawako Tanaka, Young Joon Choi, Makoto Ishida, Kazuaki Sawada, Hiromu Ishii, Katsuyuki Machida, Yasuhiko Nikaido, Mitsumasa Saito, Shin Ichi Yoshida

    IEEJ Transactions on Sensors and Micromachines   140 ( 5 )   103 - 108   2020.5

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1541/ieejsmas.140.103

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  • Electrodeposition of Au-Cu Alloys and the Micro-Mechanical Properties Reviewed

    Tso-Fu Mark Chang, Haochun Tang, Chun-Yi Chen, Daisuke Yamane, Hiroyuki Ito, Katsuyuki Machida, Kazuya Masu, Masato Sone

    ECS Meeting Abstracts   {MA}2020-01 ( 20 )   1233 - 1233   2020.5

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    Publishing type：Research paper (scientific journal)   Publisher：The Electrochemical Society  

    DOI： 10.1149/MA2020-01201233mtgabs

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  • CMOS-MEMS based microgravity sensor and its application

    Kazuya Masu, Katsuyuki Machida, Daisuke Yamane, Hiroyuki Ito, Noboru Ishihara, Tso Fu Mark Chang, Masato Sone, Ryo Shigeyama, Taiki Ogata, Yoshihiro Miyake

    ECS Transactions   97 ( 5 )   91 - 108   2020.4

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    Publishing type：Research paper (international conference proceedings)  

    DOI： 10.1149/09705.0091ecst

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  • A Gold Proof-Mass Differential MEMS Accelerometer for Micro-G Level Sensing

    Tatsuya Koga, Takashi Ichikawa, Daisuke Yamane, Shinichi Iida, Noboru Ishihara, Hiroyuki Ito, Katsuyuki Machida, Kazuya Masu

    INERTIAL 2020 - 7th IEEE International Symposium on Inertial Sensors and Systems, Proceedings   2020.3

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    Publishing type：Research paper (international conference proceedings)  

    DOI： 10.1109/INERTIAL48129.2020.9090069

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  • Alloy Electroplating and Young's Modulus Characterization of AuCu Alloy Microcantilevers

    Kyotaro Nitta, Tso Fu Mark Chang, Haochun Tang, Chun Yi Chen, Shinichi Iida, Daisuke Yamane, Katsuyuki MacHida, Hiroyuki Ito, Kazuya Masu, Masato Sone

    Journal of the Electrochemical Society   167 ( 8 )   2020.1

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    DOI： 10.1149/1945-7111/ab8805

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  • Fabrication of Au-Cu Alloy/Ti Layered Micro-Cantilevers and the Long-Term Structure Stability Reviewed

    Kyotaro Nitta, Masato Sone, Haochun Tang, Chun Yi Chen, Tso Fu Mark Chang, Daisuke Yamane, Shinichi Iida, Katsuyuki Machida, Hiroyuki Ito, Kazuya Masu

    Proceedings of IEEE Sensors   2019-October   2019.10

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    DOI： 10.1109/SENSORS43011.2019.8956496

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  • High-Sensitivity Inertial Sensor Module to Measure Hidden Micro Muscular Sounds Reviewed

    Tatsuya Koga, Katsuyuki Machida, Yoshihiro Miyake, Kazuya Masu, Takashi Ichikawa, Naoto Tanaka, Taiki Ogata, Hiroki Ora, Daisuke Yamane, Noboru Ishihara, Hiroyuki Ito, Masato Sone

    BioCAS 2019 - Biomedical Circuits and Systems Conference, Proceedings   2019.10

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    DOI： 10.1109/BIOCAS.2019.8919151

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  • Identification of Legionella Species by Photogate-Type Optical Sensor

    Sawako Tanaka, Yoshida Shin-Ichi, Yong Joon Choi, Toshihiko Noda, Makoto Ishida, Kazuaki Sawada, Hiromu Ishii, Katsuyuki Machida, Yasuhiko Nikaido, Mitsumasa Saito

    Proceedings of IEEE Sensors   2019-October   2019.10

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    DOI： 10.1109/SENSORS43011.2019.8956717

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  • Dependence of Fluorescence Intensity of Legionella on Excitation Light Intensity Ⅱ

    Tanaka Sawako, Choi Yong Joon, Ishida Makoto, Sawada Kazuaki, Ishii Hiromu, Machida Katsuyuki, Nikaido Yasuhiko, Saito Mitsumasa, Yoshida Shinichi

    JSAP Annual Meetings Extended Abstracts   2019.2   3096 - 3096   2019.9

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    DOI： 10.11470/jsapmeeting.2019.2.0_3096

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  • Nanoscale hierarchical structure of twins in nanograins embedded with twins and the strengthening effect Reviewed

    Haochun Tang, Tso Fu Mark Chang, Yaw Wang Chai, Chun Yi Chen, Takashi Nagoshi, Daisuke Yamane, Hiroyuki Ito, Katsuyuki Machida, Kazuya Masu, Masato Sone

    Metals   9 ( 9 )   2019.9

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    DOI： 10.3390/met9090987

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  • Cu-alloying effect on structure stability of electrodeposited gold-based micro-cantilever evaluated by long-term vibration test Reviewed

    Kyotaro Nitta, Tso Fu Mark Chang, Koichiro Tachibana, Haochun Tang, Chun Yi Chen, Shinichi Iida, Daisuke Yamane, Hiroyuki Ito, Katsuyuki Machida, Kazuya Masu, Masato Sone

    Microelectronic Engineering   215   2019.7

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    DOI： 10.1016/j.mee.2019.111001

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  • Strengthening of micro-cantilever by Au/Ti bi-layered structure evaluated by micro-bending test toward MEMS devices Reviewed

    Ken Hashigata, Tso Fu Mark Chang, Haochun Tang, Chun Yi Chen, Daisuke Yamane, Toshifumi Konishi, Hiroyuki Ito, Katsuyuki Machida, Kazuya Masu, Masato Sone

    Microelectronic Engineering   213   13 - 17   2019.5

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    DOI： 10.1016/j.mee.2019.04.008

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  • Pillar-Shaped Electrodes for 3-axis Gold-Proof-Mass MEMS Capacitive Accelerometers Reviewed

    Ken Atsumi, Shota Otobe, Tatsuya Koga, Takashi Ichikawa, Daisuke Yamane, Shinichi Iida, Hiroyuki Ito, Noboru Ishihara, Masato Sone, Katsuyuki Machida, Kazuya Masu

    2019 Symposium on Design, Test, Integration and Packaging of MEMS and MOEMS, DTIP 2019   2019.5

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    DOI： 10.1109/DTIP.2019.8752744

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  • Dependence of Fluorescence Intensity of Legionella on Excitation Light Intensity

    Tanaka Sawako, Choi Yong Joon, Ishida Makoto, Sawada Kazuaki, Ishii Hiromu, Machida Katsuyuki, Nikaido Yasuhiko, Saito Mitsumasa, Yoshida Shinichi

    JSAP Annual Meetings Extended Abstracts   2019.1   2759 - 2759   2019.2

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    DOI： 10.11470/jsapmeeting.2019.1.0_2759

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  • Long-term structure stability of Ti/Au layered micro-cantilever evaluated by vibration test Reviewed

    Koichiro Tachibana, Tso Fu Mark Chang, Chun Yi Chen, Daisuke Yamane, Toshifumi Konishi, Hiroyuki Ito, Katsuyuki Machida, Kazuya Masu, Masato Sone

    Microelectronic Engineering   207   33 - 36   2019.2

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    DOI： 10.1016/j.mee.2019.01.002

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  • A 3-D Parallel-Plate MEMS Accelerometer with a Gold Proof Mass

    Daisuke Yamane, Shota Otobe, Ken Atsumi, Tatsuya Koga, Toshifumi Konishi, Teruaki Safu, Shinichi Iida, Hiroyuki Ito, Noboru Ishihara, Katsuyuki Machida, Kazuya Masu

    Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)   2019-January   684 - 687   2019.1

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    DOI： 10.1109/MEMSYS.2019.8870627

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  • A MEMS accelerometer for sub-Mg sensing Reviewed

    Daisuke Yamane, Toshifumi Konishi, Teruaki Safu, Hiroshi Toshiyoshi, Masato Sone, Katsuyuki Machida, Hiroyuki Ito, Kazuya Masu

    Sensors and Materials   31 ( 9 )   2883 - 2894   2019

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    DOI： 10.18494/SAM.2019.2122

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  • MEMS accelerometer fabricated by gold multi-layer metal technology Reviewed

    K. Machida, D. Yamane, T. Konishi, S. Iida, N. Ishihara, T. M. Chang, M. Sone, H. Ito, K. Masu

    ECS Transactions   92 ( 4 )   169 - 184   2019

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    DOI： 10.1149/09204.0I69ecst

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  • Bacterial identification by using photogate-type optical sensor

    H. Ishii, S. Tanaka, M. Ishida, K. Sawada, K. Machida, Y. Nikaido, M. Saito, S. Yoshida

    ECS Transactions   92 ( 4 )   155 - 162   2019

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    DOI： 10.1149/09204.0155ecst

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  • Pulse-Current Electrodeposition of Gold

    Chun-Yi Chen, Masaharu Yoshiba, Haochun Tang, Tso-Fu Mark Chang, Takashi Nagoshi, Daisuke Yamane, Toshifumi Konishi, Katsuyuki Machida

    Novel Metal Electrodeposition and the Recent Application   2019

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    DOI： 10.5772/INTECHOPEN.80845

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  • Electrodeposition of Gold Alloys and the Mechanical Properties

    Haochun Tang, Tso-Fu Mark Chang, Chun-Yi Chen, Takashi Nagoshi, Daisuke Yamane, Toshifumi Konishi, Katsuyuki Machida

    Novel Metal Electrodeposition and the Recent Application   2019

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.5772/INTECHOPEN.80755

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  • High strength electrodeposited Au-Cu alloys evaluated by bending test toward movable micro-components Reviewed

    Keisuke Asano, Tso Fu Mark Chang, Haochun Tang, Takashi Nagoshi, Chun Yi Chen, Daisuke Yamane, Hiroyuki Ito, Katsuyuki Machida, Kazuya Masu, Masato Sone

    ECS Journal of Solid State Science and Technology   8 ( 8 )   P412 - P415   2019

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    DOI： 10.1149/2.0151908jss

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  • Sample size effect on micro-mechanical properties of gold electroplated with dense carbon dioxide Reviewed

    Haochun Tang, Ken Hashigata, Tso Fu Mark Chang, Chun Yi Chen, Takashi Nagoshi, Daisuke Yamane, Toshifumi Konishi, Katsuyuki Machida, Kazuya Masu, Masato Sone

    Surface and Coatings Technology   350   1065 - 1070   2018.9

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    DOI： 10.1016/j.surfcoat.2018.02.041

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  • Promoted bending strength in micro-cantilevers composed of nanograined gold toward MEMS applications Reviewed

    Keisuke Asano, Haochun Tang, Chun Yi Chen, Takashi Nagoshi, Tso Fu Mark Chang, Daisuke Yamane, Toshifumi Konishi, Katsuyuki Machida, Kazuya Masu, Masato Sone

    Microelectronic Engineering   196   20 - 24   2018.9

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    DOI： 10.1016/j.mee.2018.04.021

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  • Temperature Dependence on Package Sealing Ambient of MEMS Inertial Sensor Fabricated by Multi-layer Metal Technology

    Konishi Toshifumi, Yamane Daisuke, Safu Teruaki, Chen Chun-Yi, Chang Tso-Fu Mark, Ito Hiroyuki, Dosho Shiro, Ishihara Noboru, Sone Masato, Machida Katsuyuki, Masu Kazuya, Iida Shinichi

    JSAP Annual Meetings Extended Abstracts   2018.1   3125 - 3125   2018.3

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    DOI： 10.11470/jsapmeeting.2018.1.0_3125

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  • Enhancement in structure stability of gold micro-cantilever by constrained fixed-end in MEMS devices Reviewed

    Minami Teranishi, Chun Yi Chen, Tso Fu Mark Chang, Toshifumi Konishi, Daisuke Yamane, Katsuyuki Machida, Kazuya Masu, Masato Sone

    Microelectronic Engineering   187-188   105 - 109   2018.2

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    DOI： 10.1016/j.mee.2017.11.015

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  • Au-Cu alloys prepared by pulse electrodeposition toward applications as movable micro-components in electronic devices Reviewed

    Haochun Tang, Chun Yi Chen, Tso Fu Mark Chang, Takashi Nagoshi, Daisuke Yamane, Toshifumi Konishi, Katsuyuki Machida, Kazuya Masu, Masato Sone

    Journal of the Electrochemical Society   165 ( 2 )   D58 - D63   2018

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    DOI： 10.1149/2.0441802jes

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  • Microgravity generation using tilting board for resolution evaluation of MEMS accelerometer

    Motohiro Takayasu, Ippei Tsuji, Hiroyuki Ito, Daisuke Yamane, Shiro Dosho, Toshifumi Konishi, Noboru Ishihara, Katsuyuki Machida, Kazuya Masu

    Sensors and Materials   30 ( 12 )   2919 - 2926   2018

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    DOI： 10.18494/SAM.2018.1840

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  • Deformation behavior of electroplated gold composed of nano-columnar grains embedded in micro-columnar textures Reviewed

    Masaharu Yoshiba, Chun Yi Chen, Tso Fu Mark Chang, Takashi Nagoshi, Daisuke Yamane, Katsuyuki Machida, Kazuya Masu, Masato Sone

    Materials Letters   202   82 - 85   2017.9

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    DOI： 10.1016/j.matlet.2017.05.066

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  • PDMS-made Bacteria Trapping Chip Using Beads ⅤⅠ -Analyses of Fluorescence Decay Process of Legionella dumoffii -

    Onishi Shuhei, Choi Yong Joon, Ishida Makoto, Sawada Kazuaki, Ishii Hiromu, Machida Katsuyuki, Masu Kazuya, Nikaido Yasuhiko, Saito Mitsumasa, Yoshida Sinichi

    JSAP Annual Meetings Extended Abstracts   2017.2   2957 - 2957   2017.8

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    DOI： 10.11470/jsapmeeting.2017.2.0_2957

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  • A study on young's modulus of electroplated gold cantilevers for MEMS devices Reviewed

    Hideaki Nakajima, Tso Fu Mark Chang, Chun Yi Chen, Toshifumi Konishi, Katsuyuki Machida, Hiroshi Toshiyoshi, Daisuke Yamane, Kazuya Masu, Masato Sone

    2017 IEEE 12th International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2017   264 - 267   2017.8

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    DOI： 10.1109/NEMS.2017.8017021

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  • A Study of Long-Term Vibration Characteristics of MEMS Accelerometers Fabricated by Au Electroplating

    Yamane Daisuke, Konishi Toshifumi, Safu Teruaki, Tachibana Koichiro, Teranishi Minami, Chen Chun-Yi, Chang Tso-Fu Mark, Sone Masato, Machida Katsuyuki, Masu Kazuya

    JSAP Annual Meetings Extended Abstracts   2017.2   2951 - 2951   2017.8

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    DOI： 10.11470/jsapmeeting.2017.2.0_2951

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  • Micro-bending testing of electrodeposited gold for applications as movable components in MEMS devices Reviewed

    Keisuke Asano, Hao Chun Tang, Chun Yi Chen, Takashi Nagoshi, Tso Fu Mark Chang, Daisuke Yamane, Katsuyuki Machida, Kazuya Masu, Masato Sone

    Microelectronic Engineering   180   15 - 19   2017.8

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    DOI： 10.1016/j.mee.2017.05.044

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  • Long-term vibration characteristics of MEMS inertial sensors by multi-layer metal technology Reviewed

    Daisuke Yamane, Toshifumi Konishi, Teruaki Safu, Koichiro Tachibana, Minami Teranishi, Chun Yi Chen, Tso Fu Mark Chang, Masato Sone, Katsuyuki Machida, Kazuya Masu

    TRANSDUCERS 2017 - 19th International Conference on Solid-State Sensors, Actuators and Microsystems   2187 - 2190   2017.7

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    DOI： 10.1109/TRANSDUCERS.2017.7994510

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  • Tensile tests of micro-specimens composed of electroplated gold Reviewed

    Sari Yanagida, Tso Fu Mark Chang, Chun Yi Chen, Takashi Nagoshi, Daisuke Yamane, Katsuyuki Machida, Kazuya Masu, Masato Sone

    Microelectronic Engineering   174   6 - 10   2017.4

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    DOI： 10.1016/j.mee.2016.12.004

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  • PDMS-made Bacteria Trapping Chip Using Beads Ⅴ -Application of Filter Free Fluorescence Sensor -

    Onishi Shuhei, Choi Yongjoon, Ishida Makoto, sawada Kazuaki, Ishii Hiromu, Machida Katsuyuki, Masu Kazuya, Nikaido Yasuhiko, Saito Mitsumasa, Yoshida Shinichi

    JSAP Annual Meetings Extended Abstracts   2017.1   2973 - 2973   2017.3

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    DOI： 10.11470/jsapmeeting.2017.1.0_2973

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  • Young’s Modulus Evaluation of Electroplated Ti/Au Structures by Multi-layer Metal Technology (1)

    Yamane Daisuke, Konishi Toshifumi, Safu Teruaki, Nakajima Hideaki, Teranishi Minami, Chen Chun-Yi, Chang Tso-Fu Mark, Sone Masato, Toshiyoshi Hiroshi, Masu Kazuya, Machida Katsuyuki

    JSAP Annual Meetings Extended Abstracts   2017.1   2960 - 2960   2017.3

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    DOI： 10.11470/jsapmeeting.2017.1.0_2960

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  • A damping constant model for proof-mass structure design of MEMS inertial sensor by multi-layer metal technology Reviewed

    Toshifumi Konishi, Teruaki Safu, Katsuyuki Machida, Daisuke Yamane, Masato Sone, Kazuya Masu, Hiroshi Toshiyoshi

    Proceedings of IEEE Sensors   2017.1

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    DOI： 10.1109/ICSENS.2016.7808793

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  • High-strength electroplated Au-Cu alloys as micro-components in MEMS devices Reviewed

    Haochun Tang, Chun Yi Chen, Masaharu Yoshiba, Takashi Nagoshi, Tso Fu Mark Chang, Daisuke Yamane, Katsuyuki Machida, Kazuya Masu, Masato Sonea

    Journal of the Electrochemical Society   164 ( 4 )   D224 - D247   2017

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    DOI： 10.1149/2.141704jes

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  • Detection of bacterial fluorescence by the combination of MEMS microfluidic chip and si photodetector toward on-chip biological sensing

    S. Onishi, C. Y. Joon, M. Ishida, K. Sawada, H. Ishii, K. Machida, K. Masu, Y. Nikaido, M. Saito, S. Yoshida

    ECS Transactions   80 ( 4 )   157 - 164   2017

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    DOI： 10.1149/08004.0157ecst

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  • A design of spring constant arranged for MEMS accelerometer by multi-layer metal technology Reviewed

    Daisuke Yamane, Toshifumi Konishi, Teruaki Safu, Hiroshi Toshiyoshi, Masato Sone, Kazuya Masu, Katsuyuki Machida

    2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2016   419 - 422   2016.11

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    DOI： 10.1109/NEMS.2016.7758281

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  • Evaluation and modeling of adhesion layer in shock-protection structure for MEMS accelerometer Reviewed

    Daisuke Yamane, Toshifumi Konishi, Teruaki Safu, Hiroshi Toshiyoshi, Masato Sone, Kazuya Masu, Katsuyuki Machida

    Microelectronics Reliability   66   78 - 84   2016.11

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    DOI： 10.1016/j.microrel.2016.09.018

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  • Enhancement of mechanical strength in Au films electroplated with supercritical carbon dioxide Reviewed

    Haochun Tang, Chun Yi Chen, Takashi Nagoshi, Tso Fu Mark Chang, Daisuke Yamane, Katsuyuki Machida, Kazuya Masu, Masato Sone

    Electrochemistry Communications   72   126 - 130   2016.11

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1016/j.elecom.2016.09.019

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  • Development of high sensitivity CMOS-MEMS inertia sensor and its application to early-stage diagnosis of Parkinson's disease Reviewed

    Kazuya Masu, Daisuke Yamane, Katsuyuki Machida, Masato Sone, Yoshihiro Miyake

    European Solid-State Device Research Conference   2016-October   91 - 96   2016.10

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    Publishing type：Research paper (international conference proceedings)  

    DOI： 10.1109/ESSDERC.2016.7599596

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  • Development of high sensitivity CMOS-MEMS inertia sensor and its application to early-stage diagnosis of Parkinson's disease Reviewed

    Kazuya Masu, Daisuke Yamane, Katsuyuki Machida, Masato Sone, Yoshihiro Miyake

    European Solid-State Circuits Conference   2016-October   99 - 104   2016.10

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    DOI： 10.1109/ESSCIRC.2016.7598252

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  • Structure stability of high aspect ratio Ti/Au two-layer cantilevers for applications in MEMS accelerometers Reviewed

    Minami Teranishi, Tso Fu Mark Chang, Chun Yi Chen, Toshifumi Konishi, Katsuyuki Machida, Hiroshi Toshiyoshi, Daisuke Yamane, Kazuya Masu, Masato Sone

    Microelectronic Engineering   159   90 - 93   2016.6

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1016/j.mee.2016.02.054

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  • Pulse electroplating of ultra-fine grained Au films with high compressive strength Reviewed

    Chun Yi Chen, Masaharu Yoshiba, Takashi Nagoshi, Tso Fu Mark Chang, Daisuke Yamane, Katsuyuki Machida, Kazuya Masu, Masato Sone

    Electrochemistry Communications   67   51 - 54   2016.6

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    DOI： 10.1016/j.elecom.2016.03.017

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  • A MEMS inertia sensor with Brownian noise of below 50 nG/√Hz by multi-layer metal technology Reviewed

    Daisuke Yamane, Toshifumi Konishi, Hiroshi Toshiyoshi, Kazuya Masu, Katsuyuki Machida

    IEEE 3rd International Symposium on Inertial Sensors and Systems, ISS 2016 - Proceedings   148 - 149   2016.3

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    DOI： 10.1109/ISISS.2016.7435571

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  • A dual-axis MEMS capacitive inertial sensor with high-density proof mass Reviewed

    Daisuke Yamane, Takaaki Matsushima, Toshifumi Konishi, Hiroshi Toshiyoshi, Kazuya Masu, Katsuyuki Machida

    Microsystem Technologies   22 ( 3 )   459 - 464   2016.3

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    DOI： 10.1007/s00542-015-2539-y

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  • A 1-mG MEMS sensor Invited Reviewed

    D. Yamane, T. Konishi, H. Toshiyoshi, K. Masu, K. Machida

    ECS Transactions   72 ( 3 )   7 - 14   2016

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    DOI： 10.1149/07203.0007ecst

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  • Brittle fracture of electrodeposited gold observed by micro compression Reviewed

    Masah Aru Yoshiba, Chun Yi Chen, Tso Fu Mark Chang, Takashi Nagoshi, Daisuke Yamane, Katsuyuki Machida, Kazuya Masu, Masato Sone

    Materials Transactions   57 ( 8 )   1257 - 1260   2016

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    DOI： 10.2320/matertrans.MG201612

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  • A 0.1 G-to-20G integrated MEMS inertial sensor Reviewed

    Daisuke Yamane, Toshifumi Konishi, Takaaki Matsushima, Hiroshi Toshiyoshi, Kazuya Masu, Katsuyuki Machida

    Japanese Journal of Applied Physics   54 ( 8 )   087202-1 - 087202-4   2015.8

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    DOI： 10.7567/JJAP.54.087202

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  • An interface circuit for time-multiplexed electrostatic drive and sample of electrostatic mems mirror Reviewed

    Satoshi Maruyama, Katsuyuki Machida, Hiroshi Toshiyoshi, Toshifumi Konishi, Hiroyuki Fujita

    Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, DTIP 2015   2015.7

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    DOI： 10.1109/DTIP.2015.7161023

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  • CMOS-MEMS - New frontier of multilevel interconnect technology

    K. Machida, T. Konishi, D. Yamane, H. Toshiyoshi, K. Masu

    ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference   201   2015.5

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    Publishing type：Research paper (international conference proceedings)  

    DOI： 10.1109/ICEP-IAAC.2015.7111026

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  • An evaluation method of Brownian noise in highly sensitive capacitive sensors Reviewed

    Daisuke Yamane, Toshifumi Konishi, Takaaki Matsushima, Shota Kamei, Kazuya Masu, Katsuyuki Machida

    IEEJ Transactions on Sensors and Micromachines   135 ( 4 )   142 - 143   2015.4

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    DOI： 10.1541/ieejsmas.135.142

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  • A sub-1G MEMS sensor

    D. Yamane, T. Konishi, H. Toshiyoshi, K. Masu, K. Machida

    ECS Transactions   66 ( 5 )   131 - 138   2015

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    DOI： 10.1149/06605.0131ecst

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  • Observation of stress responses of bacteria confined in a MEMS microfluidic chip

    Y. Nishimura, M. Ishida, K. Sawada, H. Ishii, K. Machida, K. Masu, C. Wang, K. Iida, M. Saito, S. Yoshida

    ECS Transactions   69 ( 10 )   259 - 267   2015

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    Publishing type：Research paper (international conference proceedings)  

    DOI： 10.1149/06910.0259ecst

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  • A 1mG-to-20G integrated MEMS inertial sensor Reviewed

    Daisuke Yamane, Toshifumi Konishi, Takaaki Matsushima, Hiroshi Toshiyoshi, Kazuya Masu, Katsuyuki Machida

    Proceedings of IEEE Sensors   2014-December ( December )   1591 - 1594   2014.12

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    Language：English   Publishing type：Research paper (international conference proceedings)   Publisher：Institute of Electrical and Electronics Engineers Inc.  

    DOI： 10.1109/ICSENS.2014.6985322

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  • A capacitive CMOS-MEMS sensor designed by multi-physics simulation for integrated CMOS-MEMS technology Reviewed

    Toshifumi Konishi, Daisuke Yamane, Takaaki Matsushima, Kazuya Masu, Katsuyuki Machida, Hiroshi Toshiyoshi

    Japanese Journal of Applied Physics   53 ( 4 SPEC. ISSUE )   01EE15.1 - 01EE15.7   2014.4

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    DOI： 10.7567/JJAP.53.04EE15

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  • A dual-axis MEMS inertial sensor using multi-layered high-density metal for an arrayed CMOS-MEMS accelerometer Reviewed

    Daisuke Yamane, Takaaki Matsushima, Toshifumi Konishi, Hiroshi Toshiyoshi, Katsuyuki Machida, Kazuya Masu

    DTIP 2014 - Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS   69 - 72   2014.3

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    DOI： 10.1109/DTIP.2014.7056643

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  • Design of sub-1g microelectromechanical systems accelerometers Reviewed

    D. Yamane, T. Konishi, T. Matsushima, K. Machida, H. Toshiyoshi, K. Masu

    Applied Physics Letters   104 ( 7 )   2014

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    DOI： 10.1063/1.4865377

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  • A tri-axis MEMS capacitive sensor using multi-layered high-density metal for an integrated CMOS-MEMS accelerometer

    D. Yamane, T. Konishi, T. Matsushima, H. Toshiyoshi, K. Machida, K. Masu

    2014 IEEE International Interconnect Technology Conference / Advanced Metallization Conference, IITC/AMC 2014   113 - 116   2014

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    DOI： 10.1109/IITC.2014.6831856

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  • Integrated CMOS-MEMS technology and its applications Reviewed

    K. Machida, T. Konishi, D. Yamane, H. Toshiyoshi, K. Masu

    ECS Transactions   61 ( 6 )   21 - 39   2014

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    DOI： 10.1149/06106.0021ecst

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  • An ultra low power pH-monitoring IC with a duty-cycling wireless FM-transmitter

    Yusuke Shiino, Hiroyuki Ito, Taku Fujiwara, Noboru Ishihara, Hisashi Yamanouchi, Hiroki Tanabe, Satoshi Nomura, Toshifumi Konishi, Katsuyuki Machida, Kazuya Masu

    Proceedings - IEEE International Symposium on Circuits and Systems   882 - 885   2014

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    DOI： 10.1109/ISCAS.2014.6865277

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  • An arrayed accelerometer device of a wide range of detection for integrated CMOS-MEMS technology Reviewed

    Toshifumi Konishi, Daisuke Yamane, Takaaki Matsushima, Kazuya Masu, Katsuyuki Machida, Hiroshi Toshiyoshi

    Japanese Journal of Applied Physics   53 ( 2 PART 1 )   027202.1 - 027202.9   2014

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    DOI： 10.7567/JJAP.53.027202

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  • An Ultra Low Power pH-Monitoring IC with a Duty-Cycling Wireless FM-Transmitter Reviewed

    Yusuke Shiino, Hiroyuki Ito, Taku Fujiwara, Noboru Ishihara, Hisashi Yamanouchi, Hiroki Tanabe, Satoshi Nomura, Toshifumi Konishi, Katsuyuki Machida, Kazuya Masu

    2014 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)   882 - 885   2014

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  • Monolithically integrated MEMS mirror array with low electrical interference in wavelength-selective switches Reviewed

    Tomomi Sakata, Fumihiro Sassa, Mitsuo Usui, Junichi Kodate, Hiromu Ishii, Katsuyuki Machida, Yoshito Jin

    Precision Engineering   37 ( 4 )   897 - 901   2013.10

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    DOI： 10.1016/j.precisioneng.2013.05.008

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  • Novel sensor structure and its evaluation for integrated complementary metal oxide semiconductor microelectromechanical systems accelerometer Reviewed

    Toshifumi Konishi, Daisuke Yamane, Takaaki Matsushima, Ghou Motohashi, Ken Kagaya, Hiroyuki Ito, Noboru Ishihara, Hiroshi Toshiyoshi, Katsuyuki Machida, Kazuya Masu

    Japanese Journal of Applied Physics   52 ( 6 PART 2 )   06GL04   2013.6

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    DOI： 10.7567/JJAP.52.06GL04

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  • A single-platform simulation and design technique for CMOS-MEMS based on a circuit simulator with hardware description language Reviewed

    Toshifumi Konishi, Katsuyuki Machida, Satoshi Maruyama, Makoto Mita, Kazuya Masu, Hiroshi Toshiyoshi

    Journal of Microelectromechanical Systems   22 ( 3 )   755 - 767   2013

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    DOI： 10.1109/JMEMS.2013.2243111

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  • An arrayed MEMS accelerometer with a wide range of detection

    D. Yamane, T. Konishi, T. Matsushima, G. Motohashi, K. Kagaya, H. Ito, N. Ishihara, H. Toshiyoshi, K. Machida, K. Masu

    2013 Transducers and Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS 2013   22 - 25   2013

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    DOI： 10.1109/Transducers.2013.6626691

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  • Bio-MEMS chip for bacteria detection-a challenge of si technology to biomedical field

    H. Ishii, K. Sawada, M. Ishida, K. Machida, K. Iida, M. Saito, S. Yoshida

    ECS Transactions   58 ( 9 )   125 - 133   2013

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    DOI： 10.1149/05809.0125ecst

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  • Sub-1G MEMS accelerometer Reviewed

    Daisuke Yamane, Toshifumi Konishi, Takaaki Matsushima, Gou Motohashi, Ken Kagaya, Hiroyuki Ito, Nobru Ishihara, Hiroshi Toshiyoshi, Katsuyuki Machida, Kazuya Masu

    Proceedings of IEEE Sensors   513 - 516   2013

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    DOI： 10.1109/ICSENS.2013.6688166

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  • A mixed-design technique for integrated MEMS using a circuit simulator with HDL Reviewed

    Hiroshi Toshiyoshi, Toshifumi Konishi, Katsuyuki Machida, Kazuya Masu

    Proceedings of the 20th International Conference on Mixed Design of Integrated Circuits and Systems, MIXDES 2013   17 - 22   2013

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  • A time-multiplexed electrostatic drive and sample interface circuit for MEMS optical scanners Reviewed

    Satoshi Maruyama, Toshifumi Konishi, Katsuyuki Machida, Noboru Ishihara, Kazuya Masu, Hiroyuki Fujita, Hiroshi Toshiyoshi

    International Conference on Optical MEMS and Nanophotonics   21 - 22   2013

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    DOI： 10.1109/OMN.2013.6659039

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  • Sub-1G MEMS Accelerometer Reviewed

    Daisuke Yamane, Toshifumi Konishi, Takaaki Matsushima, Gou Motohashi, Ken Kagaya, Hiroyuki Ito, Nobru Ishihara, Hiroshi Toshiyoshi, Katsuyuki Machida, Kazuya Masu

    2013 IEEE SENSORS   171 - 174   2013

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  • Challenges in integration of diverse functionalities on CMOS Reviewed

    Kazuya Masu, Noboru Ishihara, Toshifumi Konishi, Katsuyuki Machida, Hiroshi Toshiyoshi

    Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC   390 - 393   2013

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    DOI： 10.1109/ASPDAC.2013.6509627

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  • Removal of gold oxide by low-temperature hydrogen annealing for microelectromechanical system device fabrication Reviewed

    Tomomi Sakata, Hiromu Ishii, Masao Nagase, Kazuhiko Takagahara, Kei Kuwabara, Kazuyoshi Ono, Norio Sato, Katsuyuki Machida

    Japanese Journal of Applied Physics   51 ( 6 PART 1 )   2012.6

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    DOI： 10.1143/JJAP.51.066501

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  • A multi-physics simulation technique for integrated MEMS

    H. Toshiyoshi, T. Konishi, K. Machida, K. Masu

    Technical Digest - International Electron Devices Meeting, IEDM   2012

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    DOI： 10.1109/IEDM.2012.6478989

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  • Multi-physics equivalent circuit model for MEMS sensors and actuators

    T. Konishi, K. Machida, K. Masu, H. Toshiyoshi

    ECS Transactions   50 ( 14 )   55 - 61   2012

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    DOI： 10.1149/05014.0055ecst

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  • Impedance-sensing circuit techniques for integration of a fraud detection function into a capacitive fingerprint sensor Reviewed

    Toshishige Shimamura, Hiroki Morimura, Nobuhiro Shimoyama, Tomomi Sakata, Satoshi Shigematsu, Katsuyuki MacHida, Mamoru Nakanishi

    IEEE Sensors Journal   12 ( 5 )   1393 - 1401   2012

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    DOI： 10.1109/JSEN.2011.2172413

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  • Capacitive-sensing circuit technique for image quality improvement on fingerprint sensor LSIs Reviewed

    Toshishige Shimamura, Hiroki Morimura, Satoshi Shigematsu, Mamoru Nakanishi, Katsuyuki MacHida

    IEEE Journal of Solid-State Circuits   45 ( 5 )   1080 - 1087   2010.5

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    DOI： 10.1109/JSSC.2010.2042525

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  • The effect of thick interconnections formed by gold electroplating on the characteristics of metal-oxide-semiconductor field-effect transistors Reviewed

    Nobuhiro Shimoyama, Norio Sato, Hiromu Ishii, Toshikazu Kamei, Kazuhisa Kudou, Katsuyuki Machida, Toshiaki Tsuchiya

    Japanese Journal of Applied Physics   49 ( 1 Part 1 )   2010

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    DOI： 10.1143/JJAP.49.016501

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  • Surface cleaning of gold structure by annealing during fabrication of microelectromechanical system devices Reviewed

    Tomomi Sakata, Yuichi Okabe, Kei Kuwabara, Norio Sato, Kazuyoshi Ono, Nobuhiro Shimoyama, Katsuyuki Machida, Hiromu Ishii

    Japanese Journal of Applied Physics   48 ( 2 )   2009.2

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    DOI： 10.1143/JJAP.48.026501

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  • A capacitive sensing scheme for control of movable element with complementary metal-oxide-semiconductor microelectoromechanical-systems device Reviewed

    Toshishige Shimamura, Hiroki Morimura, Kei Kuwabara, Norio Sato, Jun Terada, Mamoru Ugajin, Satoshi Shigematsu, Katsuyuki Machida

    Japanese Journal of Applied Physics   47 ( 5 PART 1 )   3418 - 3422   2008.5

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    DOI： 10.1143/JJAP.47.3418

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  • Spin coating film transfer and hot-pressing system for uniform dielectric formation and its application to porous low-k film formation

    Masafumi Kawagoe, Hideki Adachi, Takaaki Yanagida, Tomoyuki Komura, Hidenori Saito, Norio Sato, Kazuhisa Kudou, Katsuyuki Machida

    Japanese Journal of Applied Physics   47 ( 1 )   113 - 118   2008.1

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    DOI： 10.1143/JJAP.47.113

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  • High aspect-ratio pillar structure with gold electroplating and STP technique for thick multilevel interconnections

    N. Shimoyama, K. Ono, N. Sato, T. Sakata, K. Kuwabara, H. Ishii, T. Kamei, K. Kudou, K. Machida

    Advanced Metallization Conference (AMC)   265 - 269   2008

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  • STP technology - Interconnects, CMOS-MEMS, packaging Reviewed

    Norio Sato, Hiromu Ishii, Katsuyuki Machida, Hideki Adachi

    ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007)   23   615 - 621   2008

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  • High aspect-ratio pillar structure with gold electroplating and STP technique for thick multilevel interconnections Reviewed

    N. Shimoyama, K. Ono, N. Sato, I. Sakata, K. Kuwabara, H. Ishii, T. Kamei, K. Kudou, K. Machida

    ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007)   23   265 - 269   2008

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  • Integrated CMOS-MEMS technology and its applications Reviewed

    Hiroki Morimura, Shinichiro Mutoh, Hiromu Ishii, Katsuyuki Machida

    International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT   2460 - 2463   2008

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    DOI： 10.1109/ICSICT.2008.4735089

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  • STP technology - interconnects, CMOS-MEMS, packaging -

    Norio Sato, Hiromu Ishii, Katsuyuki Machida, Hideki Adachi

    Advanced Metallization Conference (AMC)   615 - 621   2008

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  • Cleaning of gold interconnection surface by low-temperature hydrogen annealing for MEMS device fabrication

    T. Sakata, K. Kuwabara, K. Ono, N. Sato, K. Machida, H. Ishii

    ECS Transactions   16 ( 14 )   29 - 35   2008

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    DOI： 10.1149/1.2992225

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  • A fingerprint sensor with impedance sensing for fraud detection

    Toshishige Shimamura, Hiroki Morimura, Nobuhiro Shimoyama, Tomomi Sakata, Satoshi Shigematsu, Katsuyuki Machida, Mamoru Nakanishi

    Digest of Technical Papers - IEEE International Solid-State Circuits Conference   51   170 - 172   2008

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    DOI： 10.1109/ISSCC.2008.4523111

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  • Characterization of air-gap sealing with organic dielectric using spin-coating film transfer and hot-pressing technology Reviewed

    Norio Sato, Katsuyuki Machida, Hiromu Ishii, Yoji Ishimura, Hidenori Saito, Sumitoshi Asakuma, Masafumi Kawagoe, Hideki Adachi

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   46 ( 12 )   7678 - 7683   2007.12

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    DOI： 10.1143/JJAP.46.7678

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  • Peel-off characteristics at interface between base film and dielectrics with spin-coating film transfer and hot-pressing technology

    Toshikazu Kamei, Norio Sato, Kazuhisa Kudou, Masafumi Kawagoe, Hideki Adachi, Katsuyuki Machida

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   46 ( 10 A )   6564 - 6567   2007.10

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    DOI： 10.1143/JJAP.46.6564

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  • Logic and analog test schemes for a single-chip pixel-parallel fingerprint identification LSI Reviewed

    Satoshi Shigematsu, Hiroki Morimura, Toshishige Shimamura, Takahiro Hatano, Namiko Ikeda, Yukio Okazaki, Katsuyuki Machida, Mamoru Nakanishi

    IEICE TRANSACTIONS ON ELECTRONICS   E90C ( 10 )   1892 - 1899   2007.10

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    DOI： 10.1093/ietele/e90-c.10.1892

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  • STP technology for sealing three-dimensional MEMS structures

    Norio Sato, Kazuyoshi Ono, Hiroki Morimura, Satoshi Shigematsu, Hiromu Ishii, Katsuyuki Machida

    NTT Technical Review   5 ( 10 )   2007.10

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  • Electrodeposition of water-repellent organic dielectric film as an anti-sticking coating on microelectromechanical system devices Reviewed

    Tomomi Sakata, Kei Kuwabara, Toshishige Shimamura, Norio Sato, Masao Nagase, Nobuhiro Shimoyama, Kazuhisa Kudou, Katsuyuki Machida, Hiromu Ishii

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   46 ( 9 B )   6454 - 6457   2007.9

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    DOI： 10.1143/JJAP.46.6454

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  • Monolithic integration fabrication process of thermoelectric and vibrational devices for microelectromechanical system power generator Reviewed

    Norio Sato, Kei Kuwabara, Kazuyoshi Ono, Tomomi Sakata, Hiroki Morimura, Jun Terada, Kazuhisa Kudou, Toshikazu Kamei, Masaki Yano, Katsuyuki Machida, Hiromu Ishii

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   46 ( 9 A )   6062 - 6067   2007.9

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    DOI： 10.1143/JJAP.46.6062

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  • Effect of scratch stress on the surface hardness and inner structures of a capacitive fingerprint sensor LSI

    N. Shimoyama, S. Shigematsu, H. Morimura, T. Shimamura, T. Kumazaki, M. Nakanishi, H. Ishii, K. Machida

    Annual Proceedings - Reliability Physics (Symposium)   412 - 416   2007

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    DOI： 10.1109/RELPHY.2007.369925

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  • Vacuum annealing of gold electrodes for surface cleaning in MEMS device fabrication Reviewed

    Tomomi Sakata, Kei Kuwabara, Norio Sato, Kazuyoshi Ono, Nobuhiro Shimoyama, Katsuyuki Machida, Hiromu Ishii

    Digest of Papers - Microprocesses and Nanotechnology 2007; 20th International Microprocesses and Nanotechnology Conference, MNC   366 - 367   2007

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    DOI： 10.1109/IMNC.2007.4456256

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  • Effect of scratch stress on the surface hardness and inner structures of a capacitive fingerprint sensor LSI Reviewed

    N. Shimoyama, S. Shigematsu, H. Morimura, T. Shimamura, T. Kumazaki, M. Nakanishi, H. Ishii, K. Machida

    2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL   412 - +   2007

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  • Ubiquitous user authentication system with wireless battery-powered fingerprint identification module Reviewed

    Satoshi Shigematsu, Takahiro Hatano, Hiroki Morimura, Katsuyuki Machida, Yukio Okazaki

    IEEJ Transactions on Electrical and Electronic Engineering   2 ( 6 )   643 - 650   2007

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    DOI： 10.1002/tee.20220

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  • Integrated MEMS LC resonator with sealed air-suspended structure for single-chip RF LSIs

    K. Kuwabara, N. Sato, H. Morimura, J. Kodate, M. Nakamura, M. Ugajin, T. Kamei, K. Kudou, K. Machida, H. Ishii

    Technical Digest - International Electron Devices Meeting, IEDM   423 - 426   2007

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    DOI： 10.1109/IEDM.2007.4418963

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  • Conformal coating of organic dielectric film on gold electrodes in microelectromechanical system devices by electrodeposition

    Tomomi Sakata, Yuichi Okabe, Kei Kuwabara, Norio Sato, Kazuhisa Kudou, Katsuyuki Machida, Hiromu Ishii

    IEEJ Transactions on Sensors and Micromachines   127 ( 4 )   2007

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    DOI： 10.1541/ieejsmas.127.253

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  • Structure and fabrication process for integrated RF microelectromechanical-system technology Reviewed

    Kei Kuwabara, Masami Urano, Junichi Kodate, Norio Sato, Hiroki Morimura, Tomomi Sakata, Hiromu Ishii, Toshikazu Kamei, Kazuhisa Kudou, Masaki Yano, Katsuyuki Machida

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   45 ( 9 A )   6849 - 6853   2006.9

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    DOI： 10.1143/JJAP.45.6849

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  • Electrodeposition of organic dielectric film and its application to vibrational microelectromechanical system devices Reviewed

    Tomomi Sakata, Hiromu Ishii, Norio Sato, Toshishige Shimamura, Kei Kuwabara, Kazuhisa Kudou, Katsuyuki Machida

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   45 ( 6 B )   5646 - 5649   2006.6

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  • Fingerprint image enhancement and rotation schemes for a single-chip fingerprint sensor and identifier

    Satoshi Shigematsu, Koji Fujii, Hiroki Morimura, Takahiro Hatano, Mamoru Nakanishi, Namiko Ikeda, Toshishige Shimamura, Katsuyuki Machida, Yukio Okazaki, Hakaru Kyuragi

    IEICE Transactions on Electronics   E89-C ( 4 )   540 - 550   2006.4

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    DOI： 10.1093/ietele/e89-c.4.540

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  • Evaluation of ESD hardness of fingerprint sensor LSIs

    Nobuhiro Shimoyama, Masaaki Tanno, Satoshi Shigematsu, Hiroki Morimura, Yukio Okazaki, Katsuyuki Machida

    Journal of Electrostatics   64 ( 2 )   96 - 103   2006.2

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    DOI： 10.1016/j.elstat.2005.03.092

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  • RF CMOS-MEMS switch with low-voltage operation for single-chip RF LSIs Reviewed

    K. Kuwabara, N. Sato, T. Shimamura, H. Morimura, J. Kodate, T. Sakata, S. Shigematsu, K. Kudou, K. Machida, M. Nakanishi, H. Ishii

    Technical Digest - International Electron Devices Meeting, IEDM   467 - +   2006

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    DOI： 10.1109/IEDM.2006.346891

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  • Characterization of organic dielectric for sealing air-gaps with STP technology Reviewed

    Norio Sato, Katsuyuki Machida, Hiromu Ishii, Yoji Ishimura, Hidenori Saito, Sumitoshi Asakuma, Masafumi Kawagoe, Hideki Adachi

    Advanced Metallization Conference (AMC)   2006   577 - 582   2006

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  • Characteristics of thick multilevel interconnection based on gold electroplating and STP technique

    N. Shimoyama, K. Ono, N. Sato, H. Ishii, T. Kamei, K. Kudou, K. Machida

    Advanced Metallization Conference (AMC)   2006   583 - 588   2006

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  • Selective electrodeposition technology for organic insulator films on microelectromechanical-system structures Reviewed

    Tomomi Sakata, Yuichi Okabe, Masao Nagase, Kazuhisa Kudou, Katsuyuki Machida, Hiromu Ishii, Norio Sato, Toshikazu Kamei, Masaki Yano

    IEEJ Transactions on Sensors and Micromachines   126 ( 1 )   14 - 18   2006

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    DOI： 10.1541/ieejsmas.126.14

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  • Characteristics of film peel-off in STP technology

    Toshikazu Kamci, Norio Sato, Kazuhisa Kudou, Masafumi Kawagoe, Hideki Adachi, Katsuyuki Machida

    Advanced Metallization Conference (AMC)   381 - 386   2006

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  • STP transfer system for uniform dielectrics formation

    M. Kawagoe, H. Adachi, T. Yanagida, T. Komura, N. Sato, K. Machida

    Advanced Metallization Conference (AMC)   387 - 391   2006

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  • A dual-band VCO integrated with RF-MEMS switches and inductors

    Munenari Kawashima, Yo Yamaguchi, Kei Kuwabara, Norio Sato, Katsuyuki Machida, Kazuhiro Uehara

    Proceedings of the 36th European Microwave Conference, EuMC 2006   795 - 798   2006

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    DOI： 10.1109/EUMC.2006.281039

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  • Evaluation of MOSFET characteristics with thick interconnection formed by gold electroplating for seamless integration technology

    N. Shimoyama, H. Ishii, N. Sato, T. Kamei, K. Kudou, M. Yano, Y. Okazaki, T. Tsuchiya, K. Machida

    Advanced Metallization Conference (AMC)   159 - 164   2006

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  • Novel packaging technology for microelectromechanical-system devices Reviewed

    Masami Urano, Tomomi Sakata, Toshishige Shimamura, Hiromu Ishii, Mitsuru Chino, Teruo Shimada, Hiroshi Tazawa, Katsuyuki Machida

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   44 ( 11 )   8177 - 8181   2005.11

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    DOI： 10.1143/JJAP.44.8177

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  • Force-sensing scheme for small mechanical signals in complementary metal oxide semiconductor microelectromechanical system fingerprint sensor

    Norio Sato, Hiroki Mortmura, Satoshi Shigematsu, Masaki Yano, Kazuhisa Kudou, Toshikazu Kamei, Katsuyuki Machida

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   44 ( 9 A )   6481 - 6489   2005.9

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    DOI： 10.1143/JJAP.44.6481

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  • Anti-sticking effect of organic dielectric formed by electrodeposition in microelectromechanical-system structures Reviewed

    Tomomi Sakata, Hiromu Ishii, Yuichi Okabe, Masao Nagase, Toshikazu Kamei, Kazuhisa Kudou, Masaki Yano, Katsuyuki Machida

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   44 ( 7 B )   5732 - 5735   2005.7

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    DOI： 10.1143/JJAP.44.5732

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  • Novel surface structure and its fabrication process for MEMS fingerprint sensor

    Norio Sato, Satoshi Shigematsu, Hiroki Morimura, Masaki Yano, Kazuhisa Kudou, Toshikazu Kamei, Katsuyuki Machida

    IEEE Transactions on Electron Devices   52 ( 5 )   1026 - 1032   2005.5

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    DOI： 10.1109/TED.2005.846342

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  • Effect of ground-wall structure in capacitive fingerprint sensor on electrostatic discharge tolerance

    Satoshi Shigematsu, Yasuyuki Tanabe, Nobuhiro Shimoyama, Hiroki Morimura, Yukio Okazaki, Katsuyuki Machida

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   44 ( 5 A )   2982 - 2986   2005.5

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    DOI： 10.1143/JJAP.44.2982

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  • Novel MEMS power generator with integrated thermoelectric and vibrational devices Reviewed

    Norio Sato, Hiromu Ishii, Masami Urano, Tomomi Sakata, Jun Terada, Hiroki Morimura, Satoshi Shigematsu, Kazuhisa Kudou, Toshikazu Kamei, Katsuyuki Machida

    Digest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05   1   295 - 298   2005

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    DOI： 10.1109/SENSOR.2005.1496415

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  • Electrodeposition of organic dielectric and its application to MEMS devices

    Tomomi Sakata, Hiromu Ishii, Yuichi Okabe, Norio Sato, Kazuhisa Kudou, Katsuyuki Machida

    Digest of Papers - Microprocesses and Nanotechnology 2005: 2005 International Microprocesses and Nanotechnology Conference   2005   276 - 277   2005

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    DOI： 10.1109/imnc.2005.203845

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  • Pixel-parallel image-matching circuit schemes for a single-chip fingerprint sensor and identifier

    Satoshi Shigematsu, Hiroki Morimura, Katsuyuki Machida, Yukio Okazaki, Hakaru Kyuragi

    IEICE Transactions on Electronics   E88-C ( 5 )   1070 - 1077   2005

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    DOI： 10.1093/ietele/e88-c.5.1070

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  • Fabrication of optical microelectromechanical-system switches having multilevel mirror-drive electrodes Reviewed

    Hiromu Ishii, Masami Urano, Yasuyuki Tanabe, Toshishige Shimamura, Joji Yamaguchi, Toshikazu Kamei, Kazuhisa Kudou, Masaki Yano, Yuji Uenishi, Katsuyuki Machida

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   43 ( 9 A )   6468 - 6472   2004.9

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    DOI： 10.1143/JJAP.43.6468

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  • An adaptive fingerprint-sensing scheme for a user authentication system with a fingerprint sensor LSI

    Hiroki Morimura, Satoshi Shigematsu, Toshishige Shimamura, Koji Fujii, Chikara Yamaguchi, Hiroki Suto, Yukio Okazaki, Katsuyuki Machida, Hakaru Kyuragi

    IEICE Transactions on Electronics   E87-C ( 5 )   791 - 800   2004.5

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  • Thick-dielectric formation and MOSFET reliability with spin-coating film transfer and hot-pressing technique for seamless integration technology Reviewed

    Norio Sato, Nobuhiro Shimoyama, Toshikazu Kamei, Kazuhisa Kudou, Masaki Yano, Hiromu Ishii, Katsuyuki Machida

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   43 ( 4 B )   2271 - 2276   2004.4

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    DOI： 10.1143/JJAP.43.2271

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  • Fingerprint sensor LSI

    Katsuyuki Machida, Hiroki Morimura, Satoshi Shigematsu, Yukio Okazaki

    Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)   87 ( 3 )   29 - 38   2004.3

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    DOI： 10.1002/ecjb.10175

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  • Evaluation of ESD hardness for fingerprint sensor LSIs

    Nobuhiro Shimoyama, Masaaki Tanno, Satoshi Shigematsu, Hiroki Morimura, Yukio Okazaki, Katsuyuki Machida

    Electrical Overstress/Electrostatic Discharge Symposium Proceedings   2004

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    DOI： 10.1109/EOSESD.2004.5272630

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  • A wireless battery-powered fingerprint identification system for ubiquitous user authentication

    Satoshi Shigematsu, Takahiro Hatano, Hiroki Morimura, Katsuyuki Machida, Yukio Okazaki

    2004 IEEE International Symposium on Consumer Electronics - Proceedings   600 - 603   2004

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  • Microfabrication Technology for Millimeter-Wave Photonic Systems on Si Reviewed

    Hiromu Ishii, Tadashi Minotani, Yakov Royter, Shouji Yagi, Kazuhisa Kudou, Masaki Yano, Tadao Nagatsuma, Katsuyuki Machida, Hakaru Kyuragi

    IEEJ Transactions on Sensors and Micromachines   124 ( 4 )   136 - 142   2004

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    DOI： 10.1541/ieejsmas.124.136

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  • Porous low-k film formation by STP technology

    M. Kawagoe, H. Adachi, H. Saito, N. Sato, K. Machida

    Advanced Metallization Conference (AMC)   431 - 436   2004

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  • Fingerprint sensor technology - Sensor structure/chip, sensing scheme, and system

    H. Morimura, S. Shigematsu, Y. Okazaki, K. Machida

    International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT   2   1482 - 1487   2004

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  • Selective organic dielectric deposition for encapsulation of MEMS structure

    Tomomi Sakata, Hiromu Ishii, Yuichi Okabe, Masao Nagase, Masaki Yano, Kazuhisa Kudou, Toshikazu Kamei, Katsuyuki Machida

    Digest of Papers - Microprocesses and Nanotechnology 2004   308 - 309   2004

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    DOI： 10.1109/imnc.2004.245666

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  • MEMS fingerprint sensor immune to various finger surface conditions

    Norio Sato, Katsuyuki Machida, Hiroki Morimura, Satoshi Shigematsu, Kazuhisa Kudou, Masaki Yano, Hakaru Kyuragi

    IEEE Transactions on Electron Devices   50 ( 4 )   1109 - 1116   2003.4

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    DOI： 10.1109/TED.2003.812490

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  • A sealing technique for stacking MEMS on LSI using spin-coating film transfer and hot pressing

    Norio Sato, Hiromu Ishii, Satoshi Shigematsu, Hiroki Morimura, Toshikazu Kamei, Kazuhisa Kudou, Masaki Yano, Katsuyuki Machida, Hakaru Kyuragi

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   42 ( 4 B )   2462 - 2467   2003.4

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    DOI： 10.1143/jjap.42.2462

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  • High Sensitive Structure and Its Fabrication Process for MEMS Fingerprint Sensor to Various Fingers

    N. Sato, S. Shigematsu, H. Morimura, M. Yano, K. Kudou, T. Kamei, K. Machida

    Technical Digest - International Electron Devices Meeting   771 - 774   2003

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  • Novel Fabrication Process and Structure of a Low-Voltage-Operation Micromirror Array for Optical MEMS Switches Reviewed

    M. Urano, H. Ishii, Y. Tanabe, T. Shimamura, T. Sakata, T. Kamei, K. Kudou, M. Yano, K. Machida

    Technical Digest - International Electron Devices Meeting   965 - 968   2003

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  • Fabrication of optical MEMS switches having multilevel mirror-drive electrodes Reviewed

    H. Ishii, Y. Tanabe, T. Shimamura, J. Yamaguchi, M. Urano, T. Kamei, K. Kudou, M. Yano, Y. Uenishi, K. Machida

    2003 IEEE/LEOS International Conference on Optical MEMS   121 - 122   2003

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    DOI： 10.1109/OMEMS.2003.1233496

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  • Millimeter-wave photonic integrated circuit technologies for high-speed wireless communications applications

    T. Nagatsuma, A. Hirata, M. Harada, H. Ishii, K. Machida, T. Minotani, H. Ito, T. Kosugi, T. Shibata

    Digest of Technical Papers - IEEE International Solid-State Circuits Conference   47   370 - 371+621   2003

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  • A zero-sink-current schmitt trigger and window-flexible counting circuit for fingerprint sensor/identifier

    Hiroki Morimura, Toshishige Shimamura, Koji Fujii, Satoshi Shigematsu, Yukio Okazaki, Katsuyuki Machida

    Digest of Technical Papers - IEEE International Solid-State Circuits Conference   47   92 - 93   2003

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  • シームレスインテグレーション技術－MEMSとLSIの融合に向けて－（キーノートスピーチ）

    町田 克之, 佐藤 昇男, 浦野 正美, 石井 仁

    精密工学会学術講演会講演論文集   2003A   473 - 473   2003

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    Language：Japanese   Publisher：公益社団法人 精密工学会  

    DOI： 10.11522/pscjspe.2003a.0.473.0

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  • Characteristics of fingerprint sensing on capacitive fingerprint sensor LSIs with a grounded wall structure

    Hiroki Morimura, Satoshi Shigematsu, Toshishige Shimamura, Norio Sato, Yukio Okazaki, Katsuyuki Machida, Hakaru Kyuragi

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   41 ( 10 )   5951 - 5956   2002.10

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    DOI： 10.1143/jjap.41.5951

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  • A pixel-level automatic calibration circuit scheme for capacitive fingerprint sensor LSIs

    Hiroki Morimura, Satoshi Shigematsu, Toshishige Shimamura, Katsuyuki Machida, Hakaru Kyuragi

    IEEE Journal of Solid-State Circuits   37 ( 10 )   1300 - 1306   2002.10

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    DOI： 10.1109/JSSC.2002.803022

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  • Advanced transfer system for spin coating film transfer and hot-pressing in planarization technology

    Norio Sato, Katsuyuki Machida, Kazuhisa Kudou, Masaki Yano, Hakaru Kyuragi

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures   20 ( 3 )   797 - 801   2002.5

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    DOI： 10.1116/1.1469014

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  • Advanced spin coating film transfer and hot-pressing process for global planarization with dielectric-material-viscosity control

    Norio Sato, Katsuyuki Machida, Masaki Yano, Kazuhisa Kudou, Hakaru Kyuragi

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   41 ( 4 B )   2367 - 2373   2002.4

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    DOI： 10.1143/JJAP.41.2367

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  • Evaluation of sensitivity on a capacitive fingerprint sensor LSI with a grounded wall structure

    Hiroki Morimura, Satoshi Shigematsu, Toshishige Shimamura, Norio Sato, Katsuyuki Machida, Hakaru Kyuragi

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   41 ( 4 B )   2316 - 2321   2002.4

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    DOI： 10.1143/jjap.41.2316

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  • An advanced fingerprint sensor LSI and its application to a fingerprint identification system

    H. Morimura, S. Shigematsu, T. Shimamura, K. Fujii, C. Yamaguchi, H. Suto, Y. Okazaki, K. Machida, H. Kyuragi

    IEEE Symposium on VLSI Circuits, Digest of Technical Papers   ( CIRCUITS SYMP. )   272 - 275   2002

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  • Advanced fingerprint sensor LSI

    Hakaru Kyuragi, Hiroki Morimura, Satoshi Shigematsu, Toshishige Shimamura, Koji Fujii, Katsuyuki Machida

    NTT R and D   51 ( 3 )   194 - 200   2002

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  • Software and hardware techniques for a single-chip fingerprint sensor/identifier

    S. Shigematsu, H. Morimura, K. Fujii, T. Hatano, M. Nakanishi, N. Ikeda, T. Shimamura, Y. Okazaki, Y. Tanabe, K. Machida, H. Kyuragi

    Multimedia, Image Processing and Soft Computing: Trends, Principles and Applications - Proceedings of the 5th Biannual World Automation Congress, WAC 2002, ISSCI 2002 and IFMIP 2002   13   123 - 128   2002

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  • A 500 dpi 224×256-pixel single-chip fingerprint identification LSI with pixel-parallel image enhancement and rotation schemes

    Satoshi Shigematsu, Koji Fujii, Hiroki Morimura, Takahiro Hatano, Mamoru Nakanishi, Takuya Adachi, Namiko Ikeda, Toshishige Shimamura, Katsuyuki Machida, Yukio Okazaki, Hakaru Kyuragi

    Digest of Technical Papers - IEEE International Solid-State Circuits Conference   ( SUPPL. )   354 - 355+473+347   2002

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  • A novel semiconductor capacitive sensor for a single-chip fingerprint sensor/identifier LSI

    Katsuyuki Machida, Satoshi Shigematsu, Hiroki Morimura, Yasuyuki Tanabe, Norio Sato, Nobuhiro Shimoyama, Toshihiko Kumazaki, Kazuhisa Kudou, Masaki Yano, Hakaru Kyuragi

    IEEE Transactions on Electron Devices   48 ( 10 )   2273 - 2278   2001.10

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    DOI： 10.1109/16.954466

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  • Effect of thinning a WSiN/WSi<inf>x</inf> barrier layer on its barrier capability

    Akihiko Hirata, Tomohiko Maeda, Katsuyuki Machida, Masahiko Maeda, Kanji Yasui, Hakaru Kyuragi

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures   19 ( 3 )   788 - 793   2001.5

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    DOI： 10.1116/1.1368681

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  • Technological fusion of heterogeneous functions

    H. Kyuragi, H. Ishii, K. Machida

    NTT R and D   50 ( 7 )   450 - 455   2001

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  • Thick film deposition by spin coating film transfer and hot-pressing

    N. Sato, K. Machida, H. Kyuragi

    NTT R and D   50 ( 7 )   470 - 475   2001

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  • Process technology for high-frequency on-chip passive elements

    K. Saito, S. Yagi, H. Ishii, K. Machida

    NTT R and D   50 ( 7 )   476 - 482   2001

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  • A new sensing and digital-conversion scheme with adaptive image-quality adjustment for a fingerprint sensor chip

    S. Shigematsu, H. Morimura, K. Machida

    Proceedings of the Annual IEEE International ASIC Conference and Exhibit   396 - 400   2001

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  • A pixel-level automatic calibration circuit scheme for sensing initialization of a capacitive fingerprint sensor LSI

    H. Morimura, S. Shigematsu, T. Shimamura, K. Machida, H. Kyuragi

    IEEE Symposium on VLSI Circuits, Digest of Technical Papers   ( CIRCUITS SYMP. )   171 - 174   2001

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  • Integration of high-performance millimeter-wave transmission lines on Si

    H. Ishii, S. Yagi, T. Nagatsuma, K. Machida

    NTT R and D   50 ( 7 )   463 - 469   2001

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  • A fabrication process and packaging for high reliability fingerprint sensor LSI

    K. Machida, S. Shigematsu, H. Morimura, Y. Tanabe, H. Unno, K. Sakuma

    NTT R and D   50 ( 7 )   456 - 462   2001

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  • Three-dimensional millimeter-wave photonic integrated circuits on Si

    T. Minotani, Y. Royter, H. Ishii, A. Hirata, K. Machida, A. Sasaki, T. Nagatsuma

    IEEE MTT-S International Microwave Symposium Digest   3   57 - 60   2001

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  • Gold damascene interconnect technology for millimeter-wave photonics on silicon Reviewed

    Hiromu Ishii, Shouji Yagi, Tadashi Minotani, Yakov Royter, Kazuhisa Kudou, Masaki Yano, Tadao Nagatsuma, Katsuyuki Machida, Hakaru Kyuragi

    Proceedings of SPIE - The International Society for Optical Engineering   4557   210 - 219   2001

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    DOI： 10.1117/12.442947

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  • Method for testing electrostatic discharge tolerance for fingerprint sensor LSI Reviewed

    Yasuyuki Tanabe, Hideyuki Unno, Katsuyuki Machida, Norio Sato, Hiromu Ishii, Satoshi Shigematsu, Hiroki Morimura, Hakaru Kyuragi

    Proceedings of SPIE - The International Society for Optical Engineering   4558   81 - 88   2001

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    DOI： 10.1117/12.442989

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  • MEMS fingerprint sensor with arrayed cavity structures

    N. Sato, K. Machida, H. Morimura, S. Shigematsu, K. Kudou, M. Yano, H. Kyuragi

    Technical Digest - International Electron Devices Meeting   913 - 916   2001

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  • A novel testing scheme for selection of capacitive fingerprint sensor LSIs

    Toshishige Shimamura, Hiroki Morimura, Hideyuki Unno, Koji Fujii, Satoshi Shigematsu, Katsuyuki Machida, Hakaru Kyuragi

    Proceedings of SPIE - The International Society for Optical Engineering   4593   23 - 30   2001

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    Publishing type：Research paper (international conference proceedings)  

    DOI： 10.1117/12.448833

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  • Electrostatic micromechanical switch for logic operation in multichip modules on Si

    Akihiko Hirata, Katsuyuki MacHida, Hakaru Kyuragi, Masahiko Maeda

    Sensors and Actuators, A: Physical   80 ( 2 )   119 - 125   2000.3

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1016/S0924-4247(99)00256-3

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  • The influence of stud bumping stress on device degradation in scaled MOSFETs

    Nobuhiro Shimoyama, Katsuyuki Machida, Masakazu Shimaya, Hiroshi Koizumi, Hakaru Kyuragi

    Microelectronics Reliability   40 ( 2 )   267 - 275   2000.2

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1016/s0026-2714(99)00218-8

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  • Innovative Integration Based on Silicon-Core Technlogies for Sensor and Communications Application Invited Reviewed

    永妻忠夫, 町田克之, 石井 仁, サーリ・ナビル, 品川 満, 久良木億, 山田順三

    International Journal of High Speed Electron. & Systems   10   205 - 215   2000.1

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    DOI： 10.1016/S0129-1564(00)00025-8

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  • A new fabrication process for low-loss millimeter-wave transmission lines on silicon

    Hiromu Ishii, Nabil Sahri, Tadao Nagatsuma, Katsuyuki Machida, Kunio Saito, Shouji Yagi, Masaki Yano, Kazuhisa Kudo, Hakaru Kyuragi

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   39 ( 4 B )   1982 - 1986   2000

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    DOI： 10.1143/jjap.39.1982

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  • A thick-Cu process for add-on interconnections using photosensitive varnish for thick interlayer dielectric Reviewed

    K. Saito, T. Kosugi, S. Yagi, C. Yamaguchi, K. Kudo, M. Yano, T. Kumazaki, M. Yaita, H. Ishii, K. Machida, H. Kyuragi

    Proceedings of the IEEE 2000 International Interconnect Technology Conference, IITC 2000   123 - 125   2000

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    DOI： 10.1109/IITC.2000.854300

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  • Advanced film transfer system for STP method in planarization technology

    Norio Sato, Katsuyuki Machida, Kazuhisa Kudo, Masaki Yano, Hakaru Kyuragi

    Advanced Metallization Conference (AMC)   535 - 540   2000

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  • A novel sensor cell architecture and sensing circuit scheme for capacitive fingerprint sensors

    Hiroki Morimura, Satoshi Shigematsu, Katsuyuki Machida

    IEEE Journal of Solid-State Circuits   35 ( 5 )   724 - 731   2000

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1109/4.841500

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  • Microfabrication technology for high-speed Si-based systems

    H. Ishii, S. Yagi, K. Saito, A. Hirata, K. Kudo, M. Yano, T. Nagatsuma, K. Machida, H. Kyuragi

    Proceedings of SPIE - The International Society for Optical Engineering   4230   43 - 52   2000

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    Publishing type：Research paper (international conference proceedings)  

    DOI： 10.1117/12.404913

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  • Design and characterization of millimeter-wave antenna for integrated photonic transmitter

    A. Hirata, N. Sahri, H. Ishii, K. Machida, S. Yagi, T. Nagatsuma

    Asia-Pacific Microwave Conference Proceedings, APMC   4   2000

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  • Ultrahigh-speed 1.55-μm photodiodes on Si with low-loss millimeter-wave waveguides

    Y. Royter, T. Minotani, H. Ishii, A. Hirata, S. Yagi, K. Machida, T. Furuta, T. Ishibashi, A. Sasaki, T. Nagatsuma

    Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS   1   283 - 284   2000

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  • Single-chip fingerprint sensor and identifier

    Satoshi Shigematsu, Hiroki Morimura, Yasuyuki Tanabe, Takuya Adachi, Katsuyuki Machida

    IEEE Journal of Solid-State Circuits   34 ( 12 )   1852 - 1859   1999.12

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1109/4.808910

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  • Influence of stud bumping stress on device degradation in scaled MOSFETs

    Nobuhiro Shimoyama, Katsuyuki Machida, Masakazu Shimaya, Hiroshi Koizumi, Hakaru Kyuragi

    Annual Proceedings - Reliability Physics (Symposium)   37 - 41   1999

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  • New sensor structure and fabrication process for a single-chip fingerprint sensor/identifier LSI

    K. Machida, S. Shigematsu, H. Morimura, N. Shimoyama, Y. Tanabe, T. Kumazaki, K. Kudou, M. Yano, H. Kyuragi

    Technical Digest - International Electron Devices Meeting   887 - 890   1999

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  • High-resolution capacitive fingerprint sensing scheme with charge-transfer technique and automatic contrast emphasis

    Hiroki Morimura, Satoshi Shigematsu, Katsuyuki Machida

    IEEE Symposium on VLSI Circuits, Digest of Technical Papers   157 - 160   1999

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  • Stress-induced device degradation due to die-attachment process after area bump formation

    Nobuhiro Shimoyama, Katsuyuki Machida, Masakazu Shimaya, Hakaru Kyuragi

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   38 ( 4 B )   2262 - 2265   1999

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1143/jjap.38.2262

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  • Characterization of micromachined coplanar waveguides on silicon up to 300 GHz

    N. Sahri, T. Nagatsuma, K. Machida, H. Ishii, H. Kyuragi

    1999 29th European Microwave Conference, EuMC 1999   1   254 - 257   1999

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    Publishing type：Research paper (international conference proceedings)  

    DOI： 10.1109/EUMA.1999.338321

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  • Micromechanical switch as the logic elements for circuits in multi chip module on Si (MCM-Si)

    A. Hirata, K. Machida, H. Kyuragi, M. Maeda

    Proceedings of the IEEE Micro Electro Mechanical Systems (MEMS)   582 - 587   1999

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  • Copper damascene interconnection with tungsten silicon nitride diffusion barrier formed by electron cyclotron resonance plasma nitridation

    Akihiko Hirata, Katsuyuki Machida, Nobuyoshi Awaya, Hakaru Kyuragi, Masahiko Maeda

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   38 ( 4 B )   2355 - 2359   1999

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    DOI： 10.1143/jjap.38.2355

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  • Diffusion barrier mechanism of extremely thin tungsten silicon nitride film formed by ECR plasma nitridation

    Akihiko Hirata, Katsuyuki Machida, Satoshi Maeyama, Yoshio Watanabe, Hakaru Kyuragi

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   37 ( 3 SUPPL. B )   1251 - 1255   1998.3

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    DOI： 10.1143/jjap.37.1251

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  • Novel global planarization technology for interlayer dielectrics using spin on glass film transfer and hot pressing

    K. Machida, H. Kyuragi, H. Akiya, K. Imai, A. Tounai, A. Nakashima

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures   16 ( 3 )   1093 - 1097   1998

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    DOI： 10.1116/1.590014

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  • Electrical characteristics of a WSi<inf>x</inf> contact electrode with a WSi<inf>x</inf>N diffusion barrier formed by using electron cyclotron resonance plasma nitridation

    A. Hirata, T. Hosoya, K. Machida, H. Kyuragi, H. Akiya

    Journal of the Electrochemical Society   144 ( 11 )   3993 - 3998   1997.11

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1149/1.1838125

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  • Device degradation due to stud bumping above the MOSFET region and the effect of annealing on the degradation

    Nobuhiro Shimoyama, Katsuyuki Machida, Masakazu Shimaya, Hideo Akiya, Hakaru Kyuragi

    Annual Proceedings - Reliability Physics (Symposium)   118 - 123   1997

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  • Highly sensitive analytical method for metallic impurities in the thin silicon layer of silicon-on-insulator wafer

    J. Kodate, K. Machida, K. Imai, M. Tanaka, N. Yabumoto

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures   15 ( 1 )   171 - 173   1997

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1116/1.589244

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  • A WSi<inf>x</inf>N diffusion barrier formed with electron cyclotron resonance nitrogen plasma

    A. Hirata, T. Hosoya, K. Machida, H. Takaoka, H. Akiya

    Journal of the Electrochemical Society   143 ( 11 )   3747 - 3751   1996.11

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1149/1.1837283

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  • A silicon oxide antireflective layer for optical lithography using electron cyclotron resonance plasma deposition

    Yoshiaki Mimura, Mikiho Kiuchi, Kazunori Anzai, Katsuyuki Machida

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   35 ( 5 SUPPL. A )   2863 - 2869   1996.5

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1143/jjap.35.2863

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  • A Polycide Gate Electrode with a Conductive Diffusion Barrier Formed with ECR Nitrogen Plasma for Dual Gate CMOS

    Tetsuo Hosoya, Katsuyuki Machida, K. I. Kazuo Imai, Eisuke Arai

    IEEE Transactions on Electron Devices   42 ( 12 )   2111 - 2116   1995.12

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1109/16.477768

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  • Metal-insulator-metal capacitors by using electron cyclotron resonance plasma-SiO<inf>2</inf> Reviewed

    K. Machida, K. Imai, K. Miura, Y. Ozaki, E. Arai

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures   13 ( 5 )   2013 - 2015   1995.9

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1116/1.588125

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  • Charge build-up reduction during biased electron cyclotron resonance plasma deposition Reviewed

    K. Machida, M. Itsumi, K. Minegishi, E. Arai

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures   13 ( 5 )   2004 - 2007   1995.9

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1116/1.588123

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  • Silicon surface cleaning by oxidation with electron cyclotron resonance oxygen plasma after contact hole dry etching

    K. Sakuma, K. Machida, K. Kamoshida, Y. Sato, K. Imai, E. Arai

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures   13 ( 3 )   902 - 907   1995.5

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    DOI： 10.1116/1.588203

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  • Characterization of thin SiN film formed with electron cyclotron resonance nitrogen plasma

    K. Machida, T. Hosoya, K. Imai, E. Arai

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures   13 ( 3 )   876 - 880   1995.5

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1116/1.588199

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  • Estimation of charge buildup during plasma processing by measuring metal-oxide thickness Reviewed

    K. Machida, M. Itsumi, K. Minegishi, E. Arai

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures   13 ( 3 )   889 - 894   1995.5

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1116/1.588201

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  • Improvement of Water-Related Hot-Carrier Reliability by Using ECR Plasma-Si02 Reviewed

    Katsuyuki Machida, Nobuhiro Shimovama, Jun ichi Takahashi, Yasuo Takahashi, Norikuni Yabumoto, Eisuke Arai

    IEEE Transactions on Electron Devices   41 ( 5 )   709 - 714   1994.5

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    DOI： 10.1109/16.285021

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  • Enhanced Hot-Carrier Degradation Due to Water-Related Components in TEOS/O3 Oxide and Water Blocking with ECR-SiO2 Film

    Nobuhiro Shimoyama, Katsuyuki Machida, Jun ichi Takahashi, Katsumi Murase, Kazushige Minegishi, Toshiaki Tsuchiya

    IEEE Transactions on Electron Devices   40 ( 9 )   1682 - 1687   1993.9

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    DOI： 10.1109/16.231575

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  • Measurements of diffusion coefficients of water in electron cyclotron resonance plasma sio<inf>2</inf>

    Yasuo Takahashi, Hideo Namatsu, Katsuyuki Machida, Kazushige Minegishi

    Japanese Journal of Applied Physics   32 ( 3 B )   L431 - L433   1993.3

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    DOI： 10.1143/JJAP.32.L431

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  • Water trapping of point defects in interlayer SiO<inf>2</inf> films and its contribution to the reduction of hot-carrier degradation

    Jun Ichi Takahashi, Katsuyuki MacHida, Nobuhiro Shimoyama, Kazusige Minegishi

    Applied Physics Letters   62 ( 19 )   2365 - 2366   1993

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    Publishing type：Research paper (scientific journal)  

    DOI： 10.1063/1.109391

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  • SILICIDATION USING ELECTRON-CYCLOTRON RESONANCE PLASMA Reviewed

    M NAGASE, H ISHII, K MACHIDA, H AKIYA

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   10 ( 3 )   1087 - 1090   1992.5

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  • Enhanced hot-carrier degradation due to water in TEOS/O<inf>3</inf>-oxide and water blocking effect of ECR-SiO<inf>2</inf>

    N. Shimoyama, K. Machida, K. Murase, T. Tsuchiya

    Digest of Technical Papers - Symposium on VLSI Technology   1992-June   94 - 95   1992

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    Publishing type：Research paper (international conference proceedings)  

    DOI： 10.1109/VLSIT.1992.200665

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  • Estimation method for charge build-up on gate oxide during bias ECR plasma deposition

    Katsuyuki Machida, Manabu Itsumi, Kazushige Minegishi

    Conference on Solid State Devices and Materials   553 - 555   1991

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    Publishing type：Research paper (international conference proceedings)  

    DOI： 10.7567/ssdm.1991.pb7-1

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  • HIGH ASPECT RATIO AND HIGH THROUGHPUT SIO//2 PLANARIZATION TECHNOLOGY WITH BIAS-ECR PLASMA DEPOSITION.

    Katsuyuki Machida, Hideo Oikawa

    Digest of Technical Papers - Symposium on VLSI Technology   69 - 70   1987

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  • NEW BIAS SPUTTERING SYSTEM WITH HIGH THROUGHPUT, HIGH UNIFORMITY AND LOW DAMAGE.

    C. Hashimoto, K. Machida, C. Tadachi, H. Takeuchi, H. Oikawa

    Digest of Technical Papers - Symposium on VLSI Technology   35 - 36   1986

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  • NEW PLANARIZATION TECHNOLOGY USING BIAS-ECR PLASMA DEPOSITION.

    Katsuyuki Machida, Hideo Oikawa

    Conference on Solid State Devices and Materials   329 - 332   1985

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    Publishing type：Research paper (international conference proceedings)  

    DOI： 10.7567/ssdm.1985.a-4-5

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  • MOS DEVICE CHARACTERISTICS BY PERFECT PLANAR TECHNOLOGY.

    T. Morimoto, K. Machida, S. Muramoto, T. Hosoya

    Conference on Solid State Devices and Materials   249 - 252   1983

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    Publishing type：Research paper (international conference proceedings)  

    DOI： 10.7567/ssdm.1983.a-7-1

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▼display all

MISC

  • The Integrated CMOS-MEMS Technology and Its Application Invited Reviewed

    MACHIDA Katsuyuki, MORIMURA Hiroki, MUTOH Shinichiro, SATO Yasuhiro

    IEICE technical report   108 ( 428 )   1 - 6   2009.2

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    Authorship：Lead author   Language：Japanese   Publishing type：Article, review, commentary, editorial, etc. (scientific journal)   Publisher：The Institute of Electronics, Information and Communication Engineers  

    The paper describes the integrated CMOS-MEMS technology and its application. We discuss the features of the integrated CMOS-MEMS from the view point of the process and LSI fabrication. The prospect of the integrated CMOS-MEMS technology is presented at the potential of device performance. CMOS-MEMS fingerprint sensor and RF CMOS-MEMS switch devices are demonstrated as the application. In conclusion, it is confirmed that the integrated CMOS-MEMS technology will pave the way for the solution of the More than Moore.

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  • 静電容量型MEMS加速度センサに向けたTi/Au積層マイクロカンチレバーの実効ヤング率に対するアニール処理の影響評価—Evaluation of Annealing Effects on Effective Young's Modulus of Ti/Au Multi-Layered Microcantilevers for MEMS Capacitive Accelerometers—第17回集積化MEMSシンポジウム

    Chun-Yi Chen, 栗岡 智行, 渡邉 春海, 森 達彦, 曽根 正人, Tso-Fu Mark Chang, 町田 克之, 伊藤 浩之, 三宅 美博

    「センサ・マイクロマシンと応用システム」シンポジウム論文集 電気学会センサ・マイクロマシン部門 [編]   42   4p   2025.11

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    CiNii Research

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    Other Link： https://ndlsearch.ndl.go.jp/books/R000000004-I034531955

  • 静電容量型MEMS加速度センサにおける金錘の形状による反り抑制の検討—Warpage suppression of the gold proof-mass by its shape design toward MEMS capacitive accelerometers—第17回集積化MEMSシンポジウム

    奥村 雅子, 栗岡 智行, 森 達彦, 山田 虎人, 向出 隼人, Chun-Yi Chen, Tso-Fu Mark Chang, 町田 克之, 三宅 美博, 曽根 正人, 伊藤 浩之

    「センサ・マイクロマシンと応用システム」シンポジウム論文集 電気学会センサ・マイクロマシン部門 [編]   42   4p   2025.11

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    CiNii Research

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    Other Link： https://ndlsearch.ndl.go.jp/books/R000000004-I034531928

  • マイクロgレベル検出のためのAu錘1軸MEMS加速度センサにおける錘構造パラメータがデバイス特性に及ぼす影響—Effect of Proof-Mass Structure Parameters on Device Characteristics of Gold Single-Axis MEMS Accelerometer for Micro-g Level Sensing—第16回集積化MEMSシンポジウム

    伊藤 浩之, 山田 虎人, Chang Tso-Fu Mark, 栗岡 智行, 曽根 正人, 御宿 希祐, Devi Srujana Tenneti, 向出 千隼, 三宅 美博, 町田 克之

    「センサ・マイクロマシンと応用システム」シンポジウム論文集 電気学会センサ・マイクロマシン部門 [編]   41   5p   2024.11

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    Other Link： https://ndlsearch.ndl.go.jp/books/R000000004-I034240872

  • MEMS加速度センサのためのTi/Au多層カンチレバーの実効ヤング率に対する測定電圧依存性に関する研究—Dependence of Applied Voltages on Effective Young's Modulus of Ti/Au Multi-Layered Micro-Cantilevers for MEMS accelerometers—第16回集積化MEMSシンポジウム

    渡邉 春海, Tenneti Devi Srujana, Tso-Fu Mark Chang, 栗岡 智行, Chun-Yi Chen, 町田 克之, 伊藤 浩之, 三宅 美博, 曽根 正人

    「センサ・マイクロマシンと応用システム」シンポジウム論文集 電気学会センサ・マイクロマシン部門 [編]   41   4p   2024.11

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    Other Link： https://ndlsearch.ndl.go.jp/books/R000000004-I034240865

  • デュアルレンジ検出のためのAu錘1軸MEMS加速度センサにおける錘反り抑制手法の検討—Suppression of Warpage in proof-masses of Dual Detection Range Gold Single-Axis MEMS Accelerometers—第16回集積化MEMSシンポジウム

    曽根 正人, 三宅 美博, 伊藤 浩之, 向出 千隼, Devi Srujana Tenneti, 御宿 希祐, 山田 虎人, 町田 克之, Tso-Fu Mark Chang, 栗岡 智行

    「センサ・マイクロマシンと応用システム」シンポジウム論文集 電気学会センサ・マイクロマシン部門 [編]   41   4p   2024.11

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    Other Link： https://ndlsearch.ndl.go.jp/books/R000000004-I034240926

  • 静電容量型MEMS加速度センサーのためのTi/Au積層マイクロカンチレバーの構造安定性に対する熱処理の影響評価—Evaluation of the Effect of Heat Treatment on Structural Stability of Ti/Au Multi-layered Microcantilevers for MEMS Capacitive Accelerometers—第16回集積化MEMSシンポジウム

    栗岡 智行, Chen Chun-Yi, Chang Tso-Fu Mark, 町田 克之, 伊藤 浩之, 三宅 美博, 曽根 正人, 宮井 良介

    「センサ・マイクロマシンと応用システム」シンポジウム論文集 電気学会センサ・マイクロマシン部門 [編]   41   5p   2024.11

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  • Au錘1軸差動型CMOS-MEMS加速度センサのための錘位置制御電極の検討—Development of Proof-mass Position Control Electrodes for Au Proof-mass Single-Axis Differential CMOS-MEMS Accelerometer—第15回集積化MEMSシンポジウム

    御宿 希祐, 大西 哲, Tenneti Devi Srujana, 町田 克之, 栗岡 智行, Tso-Fu Mark Chang, 曽根 正人, 三宅 美博, 伊藤 浩之

    「センサ・マイクロマシンと応用システム」シンポジウム論文集 電気学会センサ・マイクロマシン部門 [編]   40   3p   2023.11

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    Other Link： https://ndlsearch.ndl.go.jp/books/R000000004-I033248421

  • Evaluation of Device for High-Sensitivity MEMS Sensor Module

    内山晃宏, 柴田滉平, 大西哲, 町田克之, 緒方大樹, 石原昇, 内富寛隆, CHANG Tso-Fu Mark, 曽根正人, 三宅美博, 伊藤浩之

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   69th   2022

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  • A Study on High-Sensitivity MEMS Sensor Module for Micro Muscle Sound Measurement

    大西哲, 柴田滉平, 内山晃宏, 町田克之, 緒方大樹, 石原昇, 内富寛隆, CHANG Tso-Fu Mark, 曽根正人, 三宅美博, 伊藤浩之

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   69th   2022

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  • フォトゲート型蛍光センサによるレジオネラ属菌検知システムの検討—Detection system of bacteria, Legionella by photogate type optical sensor—第13回集積化MEMSシンポジウム

    本田 優斗, 崔 容俊, 村上 健介, 野田 俊彦, 高橋 一浩, 澤田 和明, 石井 仁, 町田 克之, 伊藤 浩之, 宮原 敏, 二階堂 靖彦, 齋藤 光正

    「センサ・マイクロマシンと応用システム」シンポジウム論文集 電気学会センサ・マイクロマシン部門 [編]   38   5p   2021.11

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  • Measurement system by photogate type fluorescent sensor for identification of Legionella

    本田優斗, CHOI Y. J., 村上健介, 野田俊彦, 高橋一浩, 澤田和明, 石井仁, 町田克之, 伊藤浩之, 二階堂靖彦, 齋藤光正

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   68th   2021

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  • Novel method of bacterial identification using photogate-type fluorescence sensor : Application to Legionella erythra

    37   5p   2020.10

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  • Investigation of fluorescence detection by photogate-type optical sensor for bacterial identification

    本田優斗, 田中佐和子, CHOI Y.J., 野田俊彦, 高橋一浩, 澤田和明, 石井仁, 町田克之, 二階堂靖彦, 齋藤光正, 吉田眞一

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   67th   2020

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  • フォトゲート型光センサによるレジオネラ属菌の菌種識別—Identification of Legionella Species by Photogate-Type Optical Sensor—第11回 集積化MEMSシンポジウム

    田中 佐和子, 崔 容俊, 石田 誠, 澤田 和明, 石井 仁, 町田 克之, 二階堂 靖彦, 齋藤 光正, 吉田 眞一

    「センサ・マイクロマシンと応用システム」シンポジウム論文集 電気学会センサ・マイクロマシン部門 [編]   36   5p   2019.11

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  • High-Resolution Inertial Sensor Module for Weak Muscular Sound Measurement

    古賀達也, 市川崇志, 田中直登, 緒方大樹, 大良宏樹, 山根大輔, 石原昇, 伊藤浩之, 曽根正人, 町田克之, 三宅美博, 益一哉

    センサ・マイクロマシンと応用システムシンポジウム(CD-ROM)   36th   2019

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  • MEMS加速度センサに向けた金めっき微小カンチレバーのヤング率に関する研究

    中島英亮, CHANG Tso‐Fu Mark, CHEN Chun‐Yi, 山根大輔, 小西敏文, 町田克之, 年吉洋, 伊藤浩之, 益一哉, 曽根正人

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   79th   ROMBUNNO.18a‐233‐6   2018.9

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  • A 0.18-µm CMOS time-domain capacitive-sensor interface for sub-1mG MEMS accelerometers

    Motohiro Takayasu, Shiro Dosho, Hiroyuki Ito, Daisuke Yamane, Toshifumi Konishi, Katsuyuki Machida, Noboru Ishihara, Kazuya Masu

    IEICE Electronics Express   15 ( 2 )   2018

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    DOI： 10.1587/elex.15.20171227

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  • レジオネラ属菌の赤色蛍光の励起光照射時間依存性の検討

    田中佐和子, 大西脩平, 石田誠, 澤田和明, 石井仁, 町田克之, 二階堂靖彦, 齋藤光正, 吉田眞一

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   79th   2018

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  • Observation of Legionella fluorescence using photogate-type fluorescent sensor

    34   1 - 4   2017.10

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  • Inclining Angle Sensitivity Characteristics of MEMS Accelerometer Fabricated by Multi-Layer Metal Technology

    34   3p   2017.10

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  • Sub-1mG MEMS inertial sensors for biomedical applications

    Daisuke Yamane, Toshifumi Konishi, Hiroshi Toshiyoshi, Masato Sone, Katsuyuki Machida, Yoshihiro Miyake, Kazuya Masu

    2017 IEEE 12TH INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (NEMS)   2017

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  • A Noise Analysis Method with Multi-physics Simulation for CMOS-MEMS Inertial Sensor

    33   1 - 4   2016.10

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  • Mechanical Property Evaluation of Electro-deposited Gold By Micro-tensile Specimens Toward MEMS Application

    33   1 - 4   2016.10

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  • Mechanical Property of Micro-Cantilever Made of Electrodeposited Gold by Micro-Bending Test

    33   1 - 4   2016.10

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  • A High-Resolution Capacitive Sensor Circuit using RC Oscillator

    33   1 - 4   2016.10

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  • Evaluation of anisotropic structure in electrodeposited Au film by micro-compression testing toward application in MEMS accelerometer

    33   1 - 4   2016.10

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  • A Study of Inertial Sensor Module with MEMS Accelerometers by Multi-layer Metal Technology

    33   1 - 4   2016.10

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  • Evaluation of structure stability of electrodeposited Ti/Au layered micro-cantilevers for MEMS devices

    33   1 - 4   2016.10

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  • A Multi-layer Metal MEMS Accelerometer with Differential Sensing Structure

    33   1 - 4   2016.10

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  • A Multi-layer Metal MEMS Inertial Sensor for Sub-1mG Detection

    33   1 - 4   2016.10

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  • Comparison of Bacterial Stress Responses between Legionella pneumophila and Legionella dumoffii Trapped in a MEMS Microfluidic Chip

    33   1 - 5   2016.10

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  • C-10-16 A Study of Multi-layer Tri-axis Accelerometer for Sub-1G Sensing

    Yamane Daisuke, Konishi Toshifumi, Toshiyoshi Hiroshi, Masu Kazuya, Machida Katsuyuki

    Proceedings of the IEICE General Conference   2016 ( 2 )   73 - 73   2016.3

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  • C-12-13 A study of CMOS low-noise amplifier design method

    Liu Anky, Konishi Toshifumi, Yamane Daisuke, Ito Hiroyuki, Dosho Shiro, Ishihara Noboru, Machida Katsuyuki, Masu Kazuya

    Proceedings of the IEICE General Conference   2016 ( 2 )   86 - 86   2016.3

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  • A Sub-1G-to-20G Integrated MEMS Inertial Sensor

    32   1 - 5   2015.10

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  • Stress responses of bacteria confined in microfluidic chips

    32   1 - 4   2015.10

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  • An Evaluation on Adhesion Characteristics with Metal Layer Structure of MEMS Accelerometer

    32   1 - 4   2015.10

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  • A study on applicability of inertial sensor for mobile vehicle control

    32   1 - 4   2015.10

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  • Observation of fluorescence from Legionella pneumophila captured in a microfluidic chip

    西村祐典, 林隆平, 中澤寛一, 石田誠, 澤田和明, 石井仁, 町田克之, 町田克之, 益一哉, WANG Changle, 飯田健一郎, 齋藤光正, 吉田眞

    電子情報通信学会技術研究報告   115 ( 65(SDM2015 18-37) )   2015

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  • ビーズを用いたPDMS製細菌捕獲チップの検討 IV-紫外光照射によるレジオネラの光応答の観測-

    西村祐典, 石田誠, 澤田和明, 石井仁, 町田克之, 町田克之, 益一哉, WANG C., 飯田健一郎, 齋藤光正, 吉田眞一

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   76th   2015

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  • A study on an operation sequence for arrayed MEMS logic devices with multi-physics simulation

    小西敏文, 町田克之, 三田信, 藤田博之, 年吉洋

    電気学会マイクロマシン・センサシステム研究会資料   MSS-15 ( 15-34 )   2015

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  • A Study of a MEMS Energy Harvesting Device with a Circuit Simulator

    31   1 - 4   2014.10

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  • A Study of Tri-axis MEMS Accelerometers by Multi-layered Au Technology

    31   1 - 5   2014.10

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  • ビーズを用いたPDMS製細菌捕獲チップの検討 II-蛍光強度の時間依存性-

    西村祐典, 林隆平, 中澤寛一, 石田誠, 澤田和明, 石井仁, 町田克之, 町田克之, 益一哉, 飯田健一郎, 齋藤光正, 吉田眞一

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   75th   2014

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  • A Study on Sensor Circuits with Multi-physics Simulation for Integrated CMOS-MEMS Technology

    30   1 - 4   2013.11

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  • Low-power wireless pH monitoring FM Transmitter IC with Ion Sensitive Field Effect Transistor

    Shiino Yusuke, Fujiwara Taku, Nomura Satoshi, Ito Hiroyuki, Ishihara Noboru, Yamanouchi Hisashi, Tanabe Hiroki, Konishi Toshifumi, Machida Katsuyuki, Masu Kazuya

    Proceedings of the Society Conference of IEICE   2013 ( 2 )   84 - 84   2013.9

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  • A Study on an Arrayed MEMS Accelerometer

    TSUKUDA Masafumi, YAMANE Daisuke, KAGAYA Ken, ITO Hiroyuki, ISHIHARA Nobiru, MASU Kazuya, KONISHI Toshifumi, MATSUSHIMA Takaaki, MACHIDA Katsuyuki, TOSHIYOSHI Hiroshi

    2013 ( 1 )   1 - 4   2013.8

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  • C-12-57 A Study of Low-power pH monitoring FM Transmitter IC with lon Sensitive Field Effect Transistor

    Shiino Yusuke, Fujiwara Taku, Ito Hiroyuki, Ishihara Noboru, Yamauchi Hisashi, Tanabe Hiroki, Nomura Satoshi, Konishi Toshifumi, Machida Katsuyuki, Masu Kazuya

    Proceedings of the IEICE General Conference   2013 ( 2 )   128 - 128   2013.3

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  • CMOS-MEMS Fingerprint Sensor

    MACHIDA Katsuyuki

    Journal of the Japan Society of Mechanical Engineers   116 ( 1130 )   20 - 23   2013.1

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  • 細菌迅速検出用マイクロチップ V-培養条件と蛍光特性-

    林隆平, 中澤寛一, 石田誠, 澤田和明, 石井仁, 町田克之, 町田克之, 石原昇, 益一哉, WANG C., 飯田健一郎, 齋藤光正, 藤井潤, 吉田眞一

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   74th   2013

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  • Integrated CMOS-MEMS Technology and Its Applications

    MORIMURA Hiroki, SHIMAMURA Toshishige, KUWABARA Kei, ONO Kazuyoshi, MACHIDA Katsuyuki

    The transactions of the Institute of Electronics, Information and Communication Engineers. C   95 ( 8 )   175 - 182   2012.8

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  • Integrated CMOS-MEMS Technology and Its Applications

    MORIMURA Hiroki, SHIMAMURA Toshishige, KUWABARA Kei, ONO Kazuyoshi, MACHIDA Katsuyuki

    IEICE technical report. Component parts and materials   111 ( 326 )   47 - 52   2011.11

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    The paper describes integrated CMOS-MEMS technology and its applications. We discuss the features of integrated complementary metal-oxide-semiconductor-microelectromechanical systems (CMOS- MEMS). The prospect of this integration is also presented. A MEMS fingerprint sensor and a low-voltage radio frequency (RF) CMOS-MEMS switch are the case studies discussed. Moreover, Power-MEMS generator and sub-nanowatt sensing circuit techniques for batteryless sensor-node with a nanowatt energy harvester are presented. In conclusion, it is confirmed that the integrated CMOS-MEMS technology will pave the way for the More than Moore technology.

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  • The integrated CMOS-MEMS technology and its application

    17 ( 3 )   71 - 77   2011.3

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  • 集積化CMOS-MEMSのためのSPICE系統合設計手法

    小西敏文, 丸山智史, 松島隆明, 三田信, 町田克之, 町田克之, 伊藤浩之, 石原昇, 益一哉, 藤田博之, 年吉洋

    センサ・マイクロマシンと応用システムシンポジウム(CD-ROM)   28th   2011

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  • 集積化CMOS-MEMS設計のためのSPICEによるマルチフィジックス解析手法

    小西敏文, 丸山智史, 松島隆明, 三田信, 町田克之, 町田克之, 石原昇, 益一哉, 藤田博之, 年吉洋

    応用物理学関係連合講演会講演予稿集(CD-ROM)   58th   2011

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  • 集積化CMOS-MEMSのための統合設計技術の検討(2)

    小西敏文, 丸山智史, 松島隆明, 三田信, 町田克之, 町田克之, 伊藤浩之, 石原昇, 益一哉, 藤田博之, 年吉洋

    応用物理学会学術講演会講演予稿集(CD-ROM)   72nd   2011

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  • Novel MEMS Packaging Technology with Combining STP and Screen-Print Techniques

    MAYUMI Naruto, CHINO Mitsuru, TAZAWA Hiroshi, KAMEI Toshikazu, MACHIDA Katsuyuki, HIGURASHI Eiji

    The IEICE transactions on electronics C   93 ( 11 )   503 - 508   2010.11

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  • Low-power wireless pH sensing FM transmitter IC with Ion Sensitive Field Effect Transistor

    Fujiwara Taku, Ishihara Noboru, Amakawa Shuhei, Yamanouchi Hisashi, Tanabe Hiroki, Nomura Satoshi, Konishi Toshifumi, Machida Katsuyuki, Masu Kazuya

    Proceedings of the Society Conference of IEICE   2010 ( 0 )   111 - 111   2010.9

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  • Wireless pH sensor module with an ISFET

    Fujiwara Taku, Ishihara Noboru, Amakawa Shuhei, Yamanouchi Hisashi, Tanabe Hiroyuki, Nomura Satoshi, Konishi Toshifumi, Machida Katsuyuki, Masu Kazuya

    Proceedings of the IEICE General Conference   ( 0 )   42 - 42   2010.3

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  • Impedance-Sensing Scheme for-Detection of Fraud using Fake Finger on Capacitive Fingerprint Sensor LSIs

    SHIMAMURA T., MORIMURA H., SHIMOYAMA N., SAKATA T., SHIGEMATSU S., NAKANISHI M., MACHIDA K.

    2009 ( 109 )   63 - 66   2009.11

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  • C-12-32 The Capacitive-Sensing Circuit for Position Control of Movable Structure on CMOS-MEMS

    Shimamura T., Morimura H., Kuwabara K., Sato N., Machida K.

    Proceedings of the Society Conference of IEICE   2009 ( 2 )   96 - 96   2009.9

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  • 集積化CMOS-MEMS技術とその応用 (特集 MEMS技術のパッケージ分野への応用)

    町田 克之, 森村 浩季, 武藤 伸一郎

    電子材料   48 ( 7 )   80 - 85   2009.7

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  • C-12-70 Impedance-Sensing Scheme for Fingerprint Sensor LSI with Liveness Detection Function

    Shimamura T., Morimura H., Shimoyama N., Sakata T., Shigematsu S., Machida K., Nakanishi M.

    Proceedings of the IEICE General Conference   2009 ( 2 )   158 - 158   2009.3

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  • Integrated CMOS-MEMS Technology

    MORIMURA Hiroki, MUTOH Shinichiro, ISHII Hiromu, MACHIDA Katsuyuki

    The Journal of the Institute of Electronics, Information and Communication Engineers   92 ( 1 )   26 - 30   2009.1

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  • 集積化Power MEMSの検討(3):Energy harvestingに向けたMEMS振動素子のSub-kHz共振の実現

    小野一善, 佐藤昇男, 石井仁, 工藤和久, 村井正忠, 町田克之, 佐藤康博

    応用物理学関係連合講演会講演予稿集   56th ( 2 )   2009

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  • STP technology for the 3D structure sealing of MEMS devices and its application

    Material stage   8 ( 9 )   32 - 35   2008.12

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  • Electrodeposition of organic thin films for preventing sticking in MEMS devices

    Material stage   8 ( 9 )   27 - 31   2008.12

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  • The Integrated CMOS-MEMS Technology and Its Application

    2008 ( 17 )   3 - 8   2008.5

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  • Electrodeposition of Organic Dielectric Film on MEMS Devices for Improvement of Reliability

    SAKATA Tomomi, KUWABARA Kei, SATO Norio, SHIMAMURA Toshishige, ISHII Hiromu, KUDOU Kazuhisa, MACHIDA Katsuyuki

    IEICE technical report   108 ( 10 )   13 - 16   2008.4

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    This article introduces a technique that prevents sticking between actuator and control electrode in microelectromechanical-system (MEMS) devices. The technique involves the pretreatment with hydrochloric acid dipping and the electrodeposition of organic dielectric film on the gold electrode. Applying this technique to a vibrational MEMS device exhibits an excellent anti-sticking effect between the vibrator and the control electrode, ensuring high durability.

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  • RF CMOS-MEMSの検討(4):厚膜金配線における高周波特性の検討

    牛山和久, 桑原啓, 佐藤昇男, 森村浩季, 小舘淳一, 村井正忠, 工藤和久, 町田克之, 石井仁

    応用物理学関係連合講演会講演予稿集   55th ( 2 )   2008

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  • MEMS用金配線表面の水素アニールによる低温清浄化

    阪田知巳, 桑原啓, 小野一善, 佐藤昇男, 町田克之, 石井仁

    応用物理学会学術講演会講演予稿集   69th ( 2 )   2008

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  • RF CMOS-MEMSの検討(5):RF MEMS素子とCMOS基板の電気的結合の低減

    桑原啓, 佐藤昇男, 森村浩季, 小舘淳一, 亀井敏和, 町田克之, 石井仁

    応用物理学会学術講演会講演予稿集   69th ( 2 )   2008

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  • アドオン型厚膜配線を形成したMOSFETの信頼性

    下山展弘, 下山展弘, 石井仁, 佐藤昇男, 小野一善, 阪田知巳, 工藤和久, 町田克之, 土屋敏章

    応用物理学会学術講演会講演予稿集   69th ( 2 )   2008

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  • MEMS微小可動部の保護封止技術の検討

    千野満, 真弓功人, 田澤浩, 島田照男, 亀井敏和, 矢野正樹, 町田克之, 佐藤昇男, 桑原啓, 石井仁, 日暮栄治

    応用物理学会学術講演会講演予稿集   69th ( 2 )   2008

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  • RF CMOS-MEMSの検討(3):低電圧駆動RF MEMSスイッチの高集積化

    桑原啓, 佐藤昇男, 森村浩季, 小舘淳一, 亀井敏和, 町田克之, 石井仁

    応用物理学関係連合講演会講演予稿集   55th ( 2 )   2008

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  • Techniques for a Single-chip Fingerprint Identification LSI

    SHIGEMATSU Satoshi, MORIMURA Hiroki, HATANO Takahiro, NAKANISHI Mamoru, IKEDA Namiko, FUJII Koji, SHIMAMURA Toshishige, MACHIDA Katsuyuki, OKAZAKI Yukio, KYURAGI Hakaru

    2007 ( 88 )   67 - 70   2007.12

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  • RF-MEMS Switch Structure for Low-Voltage Actuation and High-Density Integration

    KUWABARA Kei, SATO Norio, MORIMURA Hiroki, KODATE Junichi, KAMEI Toshikazu, MACHIDA Katsuyuki, ISHII Hiromu

    Ext. Abstr. SSDM 2007   2007   90 - 91   2007.9

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  • Thick Au High-Q Inductor and Its Chip-on-Chip Bonding on an RF IC for Various Frequencies

    KODATE Junichi, KUWABARA Kei, SATO Norio, MORIMURA Hiroki, KUDOU Kazuhisa, MACHIDA Katsuyuki, ISHII Hiromu

    2007   274 - 275   2007.9

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  • Integrated RF-MEMS and Its Packaging Technology

    KUWABARA Kei, SATO Norio, MACHIDA Katsuyuki, ISHII Hiromu, KAWASHIMA Munenari, YAMAGUCHI Yo, UEHARA Kazuhiro

    IEICE technical report   106 ( 468 )   127 - 129   2007.1

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    This paper describes a novel integrated RF MEMS technology and its packaging technology for the fusion of RF MEMS devices and RF circuits. A multilayer structure is proposed to integrate various kinds of RF MEMS devices. A thin-film wafer-level encapsulation technique is also proposed to combine RF MEMS devices and RFICs by flip-chip mounting. A multiband VCO that integrates RF-MEMS switches and inductors was fabricated and its multiband operation was achieved.

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  • 金めっきにより厚膜多層配線の検討(3)

    小野一善, 下山展弘, 佐藤昇男, 森村浩季, 小舘淳一, 工藤和久, 亀井敏和, 石井仁, 町田克之

    応用物理学関係連合講演会講演予稿集   54th ( 2 )   2007

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  • RF CMOS-MEMSの検討(1):RF MEMS技術とRF CMOS技術の融合

    桑原啓, 佐藤昇男, 島村俊重, 森村浩季, 小舘淳一, 重松智志, 中西衛, 亀井敏和, 町田克之, 石井仁

    応用物理学関係連合講演会講演予稿集   54th ( 2 )   2007

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  • シングルチップRF LSIの実現に向けたRF CMOS-MEMS技術の構築

    桑原啓, 佐藤昇男, 島村俊重, 森村浩季, 小舘淳一, 重松智志, 中西衛, 亀井敏和, 町田克之, 石井仁

    応用物理学会学術講演会講演予稿集   68th ( 2 )   2007

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  • MEMSデバイス技術 3次元MEMS構造封止のためのSTP技術とその応用

    佐藤昇男, 小野一善, 森村浩季, 重松智志, 石井仁, 町田克之

    NTT技術ジャーナル   19 ( 7 )   2007

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  • 集積化PowerMEMSの検討(2):振動発電に向けたMEMS振動素子の加振特性評価

    佐藤昇男, 小野一善, 森村浩季, 小舘淳一, 桑原啓, 阪田知巳, 亀井敏和, 工藤和久, 町田克之, 石井仁

    応用物理学会学術講演会講演予稿集   68th ( 2 )   2007

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  • STP法を用いたマイクロ流路構造の作製

    亀井敏和, 佐藤昇男, 羽田野孝裕, 小舘淳一, 工藤和久, 矢野正樹, 石井仁, 町田克之

    応用物理学会学術講演会講演予稿集   68th ( 3 )   2007

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  • STP Technology –Interconnects, CMOS-MEMS, Packaging– (invited)

    Norio Sato, Hiromu Ishii, Katsuyuki Machida, Hideki Adachi

    Proc. 2007 Advanced Metallization, JSAP-MRS   104 - 105   2007

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  • 撥水性電着膜によるMEMSデバイスのリリーススティッキング防止

    阪田知巳, 桑原啓, 佐藤昇男, 島村俊重, 石井仁, 工藤和久, 町田克之

    応用物理学関係連合講演会講演予稿集   54th ( 2 )   2007

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  • RF CMOS-MEMSのための高Qインダクタの検討

    小舘淳一, 桑原啓, 佐藤昇男, 森村浩季, 工藤和久, 町田克之, 石井仁

    応用物理学会学術講演会講演予稿集   68th ( 2 )   2007

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  • MEMS実装のためのSTP技術

    佐藤昇男, 桑原啓, 阪田知巳, 石井仁, 亀井敏和, 工藤和久, 町田克之

    日本化学会講演予稿集   87th ( 1 )   2007

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  • RF CMOS-MEMSの検討(2):RF MEMSスイッチの低電圧化

    草山裕助, 桑原啓, 佐藤昇男, 森村浩季, 阪田知巳, 工藤和久, 矢野正樹, 町田克之, 石原康利, 石井仁

    応用物理学関係連合講演会講演予稿集   54th ( 2 )   2007

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  • MEMSデバイスにおけるスティッキング防止用電着膜形成のための金電極表面処理(2)

    阪田知巳, 岡部勇一, 桑原啓, 小野一善, 佐藤昇男, 工藤和久, 町田克之, 石井仁

    応用物理学会学術講演会講演予稿集   68th ( 2 )   2007

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  • A Dual-Band VCO Integrated with RF-MEMS

    YAMAGUCHI Yo, KAWASHIMA Munenari, KUWABARA Kei, SATO Norio, MACHIDA Katsuyuki, UEHARA Kazuhiro

    IEICE technical report   106 ( 188 )   81 - 84   2006.7

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    We propose a dual-band VCO integrated with RF-MEMS devices using flip-chip mounting. A wide frequency band switching capability is realized using low-loss RF-MEMS switches and high-Q inductors to switch one of series-connected inductors. A VCO with RF-MEMS was fabricated and measured. The carrier frequency of the dual-band VCO was tuned from 4.443 to 4.695GHz and from 5.106 to 5.411GHz. The phase noise was -103dBc/Hz at a 1-MHz offset from the carrier frequency of 4.443GHz.

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  • C-2-1 An Integrated VCO with RF-MEMS Using Flip Chip Mounting

    Kawashima Munenari, Yamaguchi Yo, Kuwabara Kei, Sato Norio, Machida Katsuyuki, Uehara Kazuhiro

    Proceedings of the IEICE General Conference   2006 ( 1 )   32 - 32   2006.3

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  • 金めっきによる厚膜多層配線形成の検討(2)

    小野一善, 下山展弘, 佐藤昇男, 工藤和久, 亀井敏和, 石井仁, 町田克之

    応用物理学会学術講演会講演予稿集   67th ( 2 )   2006

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  • 有機絶縁膜の電着被覆によるMEMSデバイスの信頼性向上

    阪田知巳, 石井仁, 佐藤昇男, 島村俊重, 桑原啓, 工藤和久, 町田克之

    応用物理学関係連合講演会講演予稿集   53rd ( 2 )   2006

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  • STP法による3D構造体形成技術-空間における上面膜の加工特性

    亀井敏和, 佐藤昇男, 工藤和久, 矢野正樹, 生津英夫, 町田克之, 石井仁

    応用物理学会学術講演会講演予稿集   67th ( 2 )   2006

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  • CMOS-MEMSの位置制御のための容量センシングの検討

    島村俊重, 森村浩季, 桑原啓, 佐藤昇男, 寺田純, 宇賀神守, 重松智志, 町田克之, 中西衛, 石井仁

    応用物理学会学術講演会講演予稿集   67th ( 2 )   2006

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  • The Seamless Integration Technology and Its Application

    Katsuyuki Machida, Norio Sato, Hiromu Ishii, Hiroki Morimura, Satoshi Shigematsu, Mamoru Nakanishi

    Journal of Japan Institute of Electronics Packaging   9 ( 4 )   245 - 250   2006

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    DOI： 10.5104/jiep.9.245

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  • MEMSデバイスにおけるウエット処理時のスティッキング防止に向けた撥水性電着膜形成

    阪田知巳, 石井仁, 佐藤昇男, 桑原啓, 島村俊重, 工藤和久, 町田克之

    応用物理学会学術講演会講演予稿集   67th ( 2 )   2006

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  • The Seamless Integration Technology and Its Application

    MACHIDA Katsuyuki, SATO Norio, ISHII Hiromu, MORIMURA Hiroki, SHIGEMATSU Satoshi, OKAZAKI Yukio

    2005 ( 45 )   25 - 30   2005.10

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  • A 6-bit A/D Converter for MEMS-control circuit

    TERADA Jun, URANO Masami, KODATE Jun-ichi, MUTOH Shin'ichiro, MACHIDA Katsuyuki

    2005   926 - 927   2005.9

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  • Integrated RF-MEMS Technology with Wafer-Level Encapsulation

    KUWABARA Kei, URANO Masami, KODATE Junichi, SATO Norio, SAKATA Tomomi, ISHII Hiromu, KAMEI Toshikazu, KUDOU Kazuhisa, YANO Masaki, MACHIDA Katsuyuki

    Extended Abstracts of the 2005 International Conference on Solid State Devices and Materials (SSDM), Kobe, Sept.   2005   86 - 87   2005.9

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  • B-18-2 A Wireless Battery-powered Fingerprint Identification System for Ubiquitous User Authentication

    Shigematsu S., Hatano T., Morimura H., Machida K., Okazaki Y.

    Proceedings of the Society Conference of IEICE   2005 ( 2 )   420 - 420   2005.9

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  • 集積化RF-MEMSの検討:異種素子の混載と封止

    桑原啓, 浦野正美, 小舘淳一, 佐藤昇男, 阪田知巳, 石井仁, 亀井敏和, 工藤和久, 矢野正樹, 町田克之

    応用物理学会学術講演会講演予稿集   66th ( 2 )   2005

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  • 金めっきによる厚膜多層配線形成の検討

    工藤和久, 佐藤昇男, 石井仁, 亀井敏和, 下山展弘, 矢野正樹, 生津英夫, 町田克之

    応用物理学会学術講演会講演予稿集   66th ( 2 )   2005

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  • 電着有機膜によるMEMS構造のスティッキング防止効果

    阪田知巳, 石井仁, 岡部勇一, 佐藤昇男, 永瀬雅夫, 亀井敏和, 工藤和久, 矢野正樹, 町田克之

    応用物理学関係連合講演会講演予稿集   52nd ( 2 )   2005

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  • MEMSデバイスにおけるスティッキング防止用電着膜形成のための金電極表面処理

    阪田知巳, 石井仁, 岡部勇一, 佐藤昇男, 桑原啓, 八木祥次, 亀井敏和, 工藤和久, 矢野正樹, 町田克之

    応用物理学会学術講演会講演予稿集   66th ( 2 )   2005

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  • 集積化Power MEMSの検討:熱電素子と振動素子の集積化プロセス

    佐藤昇男, 石井仁, 浦野正美, 阪田知巳, 寺田純, 森村浩季, 重松智志, 桑原啓, 工藤和久, 亀井敏和, 矢野正樹, 八木祥次, 町田克之

    応用物理学会学術講演会講演予稿集   66th ( 2 )   2005

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  • 金めっきによる厚膜配線層形成後のMOSFET特性評価

    下山展弘, 石井仁, 佐藤昇男, 亀井敏和, 工藤和久, 矢野正樹, 岡崎幸夫, 土屋敏章, 町田克之

    応用物理学会学術講演会講演予稿集   66th ( 2 )   2005

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  • An Ultralow-Power Fingerprint Sensing Circuit Scheme for a Single-Chip Fingerprint Sensor/Identifier

    MORIMURA Hiroki, SHIMAMURA Toshishige, FUJII Koji, SHIGEMATSU Satoshi, OKAZAKI Yukio, MACHIDA Katsuyuki

    Technical report of IEICE. ICD   104 ( 67 )   41 - 46   2004.5

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    A zero-sink-current Schmitt trigger and a window-flexible counting circuit are proposed for low-power and adjustable sensing of a single-chip fingerprint sensor/identifier LSI (FIL). The Schmitt trigger used for A/D conversion dramatically reduces the power dissipation, and the counting circuit used for evaluation of the image quality enhances the adjustability of fingerprint sensing. The proposed techniques were evaluated on the chip implemented in the 0.25μm CMOS and our sensor processes. The scheme achieved the ultralow-power sensing of 6.4μW/frame, which is 1/1500 that of a conventional chip, while the sensing adjustability is enhanced. This confirms the effectiveness of the ultralow-power fingerprint sensing circuit scheme suitable for a single-chip fingerprint sensor/identifier.

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  • Compact fingerprint verification devices: FingerToken

    Hiroki Suto, Satoshi Shigematsu, Takahiro Hatano, Chikara Yamaguchi, Yukio Okazaki, Katsuyuki Machida

    NTT Technical Review   2 ( 2 )   65 - 69   2004.2

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  • Compact Fingerprint Verification Device : FingerToken

    SUTO Hiroki, SHIGEMATSU Satoshi, HATANO Takahiro, YAMAGUCHI Chikara, OKAZAKI Yukio, MACHIDA Katsuyuki

    The Journal of Reliability Engineering Association of Japan   26 ( 6 )   522 - 528   2004

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    Language：Japanese   Publisher：Reliability Engineering Association of Japan  

    DOI： 10.11348/reajshinrai.26.6_522

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  • 選択絶縁膜形成のための電着有機薄膜形成技術

    阪田知巳, 石井仁, 岡部勇一, 佐藤昇男, 町田克之, 矢野正樹, 工藤和久, 亀井敏和

    応用物理学会学術講演会講演予稿集   65th ( 2 )   2004

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  • Fingerprint Sensor LSI

    MACHIDA Katsuyuki, MORIMURA Hiroki, SHIGEMATSU Satoshi, OKAZAKI Yukio

    The Transactions of the Institute of Electronics, Information and Communication Engineers C   86 ( 7 )   665 - 673   2003.7

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  • Fingerprint image rotation scheme for a single-chip fingerprint identification LSI

    Shigematsu S., Fujii K., Morimura H., Hatano T., Nakanishi M., Ikeda N., Shimamura T., Machida K., Okazaki Y., Kyuragi H.

    Proceedings of the IEICE General Conference   2003 ( 2 )   162 - 162   2003.3

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  • Novel Wafer-level Testing Scheme for Capacitive Fingerprint Sensor LSI's with Pixel Self-check

    SHIMAMURA Toshishige, MORIMURA Hiroki, SHIGEMATSU Satoshi, OKAZAKI Yukio, MACHIDA Katsuyuki, KYURAGI Hakaru

    IEICE technical report. Component parts and materials   102 ( 621 )   31 - 36   2003.1

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    This paper describes a novel testing scheme to select good capacitive fingerprint sensor LSI chips at the wafer level. A test function implemented in each sensor pixel simulates detection of a fingerprint pattern, eliminating the need of touching the sensor LSI. To self-check in the pixel, a dummy capacitor is used for the simulation of a finger. The pixel self-check detects disabled-pixels, whose output is abnormally fixed. The experimental results for a developed sensor LSI confirm that failures are accurately detected. The proposed testing scheme allows sensor pixels to check themselves without finger touching and enables the selection of good chips at the wafer level.

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  • STP法による絶縁膜形成後のMOSFET信頼性評価

    佐藤昇男, 下山展弘, 亀井敏和, 工藤和久, 矢野正樹, 石井仁, 町田克之

    応用物理学会学術講演会講演予稿集   64th ( 2 )   2003

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  • シームレスインテグレーション技術によるCMOS MEMS指紋センサ

    佐藤昇男, 町田克之, 森村浩季, 重松智志, 矢野正樹, 工藤和久, 亀井敏和, 石井仁, 久良木億

    センサ・マイクロマシンと応用システムシンポジウム講演概要集   20th   2003

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  • シームレスインテグレーション技術のための基盤技術

    町田克之, 佐藤昇男, 石井仁

    精密工学会大会学術講演会講演論文集   2003   2003

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  • シームレスインテグレーション技術-MEMSとLSIの融合に向けて-

    町田克之, 佐藤昇男, 浦野正美, 石井仁

    精密工学会大会学術講演会講演論文集   2003   2003

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  • STP法による厚膜絶縁膜形成特性の評価

    亀井敏和, 佐藤昇男, 矢野正樹, 工藤和久, 石井仁, 町田克之

    応用物理学会学術講演会講演予稿集   64th ( 2 )   2003

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  • A New Sensing and Digital-Conversion Scheme With Adaptive Image-Quality Adjustment for A Fingerprint Sensor Chip

    SHIGEMATSU Satoshi, MORIMURA Hiroki, MACHIDA Katsuyuki

    Technical report of IEICE. ICD   102 ( 339 )   31 - 36   2002.9

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    Language：Japanese   Publisher：The Institute of Electronics, Information and Communication Engineers  

    A new fingerprint sensing and digital-conversion scheme is proposed. In this scheme, transforming the sensed signal to a time axis widens the dynamic range of the signal, and the transformed signal is converted to the digital signal with variable range and offset. These features make it possible to sense various fingerprints clearly. We also propose a flow that adjusts the quality of the fingerprint image adaptively. The effectiveness of the scheme on sensing fingerprints clearly was confirmed by a test chip fabricated using 0.5-μm CMOS/sensor process.

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  • Evaluation of Sensitivity on a Capacitive Fingerprint Sensor LSI with a Grounded Wall Structure

    MORIMURA Hiroki, SHIGEMATSU Satoshi, SHIMAMURA Toshishige, SATO Norio, MACHIDA Katsuyuki, KYURAGI Hakaru

    IEICE technical report. Electron devices   102 ( 326 )   7 - 12   2002.9

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    This paper describes the sensitivity to capture fingerprint images on a capacitive fingerprint sensor LSI with a grounded (GND) wall structure. We investigated the sensing characteristics of the fingerprint sensor LSI with the GND wall structure in comparison with that of the conventional planar structure. For the analysis, we proposed circuit models based on the GND wall and the planar structure that take account of the finger's resistance, and calculated numerically the sensing characteristics. The analysis revealed that the resistance of the finger degrades the sensitivity and the GND wall structure provides a high sensitivity because it suppresses the finger's resistance. The experimental results confirmed that the proposed models are appropriate and clarified the effect of the GND wall structure on fingerprint images. Therefore, it is concluded that a fingerprint sensor LSI with the GND wall structure achieves a high sensitivity in capturing clear fingerprint images.

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  • Fingerprint image enhancement scheme for a single-chip fingerprint identification LSI

    Shigematsu S., Fujii K., Morimura H., Hatano T., Nakanishi M., Ikeda N., Shimamura T., Machida K., Okazaki Y., Kyuragi H.

    Proceedings of the Society Conference of IEICE   2002 ( 2 )   82 - 82   2002.8

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  • A Pixel-Level Automatic Calibration Circuit Scheme for Capacitive Fingerprint Sensor LSIs

    Morimura Hiroki, Shigematsu Satoshi, Shimamura Toshishige, Machida Katsuyuki, Kyuragi Hakaru

    Proceedings of the Society Conference of IEICE   2002 ( 2 )   84 - 84   2002.8

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  • A Novel Testing Scheme for Selection of Capacitive Fingerprint Sensor LSIs

    Shimamura Toshishige, Morimura Hiroki, shigematu satoshi, Okazaki Yukio, Machida Katsuyuki, Kyuragi Hakaru

    Proceedings of the Society Conference of IEICE   2002 ( 2 )   85 - 85   2002.8

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  • An Advanced Fingerprint Sensor LSI and its Application to a Fingerprint Identification System

    MORIMURA Hiroki, SHIGEMATSU Satoshi, SHIMAMURA Toshishige, FUJII Koji, YAMAGUCHI Chikara, SUTO Hiroki, OKAZAKI Yukio, MACHIDA Katsuyuki, KYURAGI Hakaru

    Technical report of IEICE. ICD   102 ( 234 )   35 - 40   2002.7

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    We developed an advanced fingerprint sensor LSI that features a novel sensor structure, sensing circuit, and calibration circuit, using the 0.5-μm CMOS process/sensor process. The LSI is reliable, sensitive, and tolerant to changes in the sensor surface conditions for capturing clear fingerprint image over long-term use. We also introduce a fingerprint-image adjustment scheme with an adjustable A/D converter to obtain image quality suitable for identification. The fingerprint identification system achieved sufficient performance for a practical fingerprint identification system.

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  • Fingerprint Sensor LSI

    OKAZAKI Yukio, MACHIDA Katsuyuki

    IEICE technical report. Circuits and systems   102 ( 161 )   143 - 150   2002.6

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    We have developed a capacitive fingerprint sensor LSI with such features as a small size, light weight, low power consumption, that offers secure and convenient automatic user authentication. The sensing circuit achieves high sensitivity to detect small capacitance between the finger surface and the sensor plate. The calibration circuit eliminates the influence of the sensor surface condition, which is degraded by dirt or a scratch during long-time usage. The chip also has a fingerprint-image adjustment scheme with an adjustable A/D converter to obtain image quality suitable for identification. Each sensor plate is surrounded by a grounded wall, and the top of the wall is exposed to the sensor surface. This structure provides high immunity to electrostatic discharge because the charge of the finger is discharged through the grounded wall.

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  • Single-chip Fingerprint identification LSI with Pixel-Parallel Fingerprint-Image Enhancement and Rotation schemes

    SHIGEMATSU S., FUJII K., MORIMURA H., HATANO T., NAKANISHI M., IKEDA N., SHIMAMURA T., MACHIDA K., OKAZAKI Y., KYURAGI H.

    Technical report of IEICE. ICD   102 ( 82 )   7 - 12   2002.5

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    This paper presents the fingerprint-image enhancement and rotation schemes which increase the identification accuracy using the pixel-parallel processing of pixels. In this schemes, the range of fingerprint sensor is adjusted to finger state, the sensed image is retouched to obtain the most suitable fingerprint for identification, and the image is rotated to the correct angle. The 150,000-times identification test confirms that the schemes reduce false rejection rate to 6.17% from 30.59%, when false acceptance rate is 0.1%.

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  • Thick On-Chip Interconnections by Cu-Damascene Processes Using a Photosensitive Polymer

    SAITO Kunio, KOSUGI Toshihiko, YAMAGUCHI Chikara, KUDO Kazuhisa, YANO Masaki, YAGI Shoji, ISHII Hiromu, MACHIDA Katsuyuki, KYURAGI Hakaru

    IEICE transactions on electronics   85 ( 3 )   864 - 864   2002.3

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    Thick on-chip interconnections with the order of 10 μm in size have been formed using a positive-type photosensitive polymer and Cu-damascene technique. Low-k interlayer- dielectric (ILD) patterns were obtained by annealing the photosensitive polymer patterns which was formed by UV exposure and developing. High-quality spiral inductors with a maximum Q of 38 and coplanar waveguides with small transmission losses were obtained with reducing high-frequency power loss in the silicon substrate by forming a 20-30-μm-thick low-k ILD layer between the silicon substrate and the interconnection. A low phase-noise performance was obtained with a voltage-controlled oscillator LSI equipped with the spiral inductor.

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  • Thick On-Chip Interconnections by Cu-Damascene Processes Using a Photosensitive Polymer

    SAITO Kunio, KOSUGI Toshihiko, YAMAGUCHI Chikara, KUDO Kazuhisa, YANO Masaki, YAGI Shoji, ISHII Hiromu, MACHIDA Katsuyuki, KYURAGI Hakaru

    The IEICE transactions on electronics C   85 ( 3 )   187 - 195   2002.3

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  • STP法による封止技術 (2) MEMS指紋センサLSIへの応用

    町田克之, 佐藤昇男, 石井仁, 重松智志, 森村浩季, 工藤和久, 矢野正樹

    応用物理学会学術講演会講演予稿集   63rd ( 2 )   2002

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  • A New Sensing and Digital-Conversion Scheme With Adaptive Image-Quality Adjustment for A Fingerprint Sensor Chip

    SHIGEMATSU Satoshi, MORIMURA Hiroki, MACHIDA Katsuyuki

    ITE Technical Report   26 ( 0 )   31 - 36   2002

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    A new fingerprint sensing and digital-conversion scheme is proposed. In this scheme, transforming the sensed signal to a time axis widens the dynamic range of the signal, and the transformed signal is converted to the digital signal with variable range and offset. These features make it possible to sense various fingerprints clearly. We also propose a flow that adjusts the quality of the fingerprint image adaptively. The effectiveness of the scheme on sensing fingerprints clearly was confirmed by a test chip fabricated using 0.5-μm CMOS/sensor process.

    DOI： 10.11485/itetr.26.62.0_31

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  • STP法による封止技術 (1) MEMSプロセスへの適用

    佐藤昇男, 石井仁, 工藤和久, 矢野正樹, 町田克之

    応用物理学会学術講演会講演予稿集   63rd ( 2 )   2002

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  • STP法における絶縁膜形成特性の評価 (1) 数値解析

    佐藤昇男, 工藤和久, 矢野正樹, 亀井敏和, 石井仁, 町田克之

    応用物理学会学術講演会講演予稿集   63rd ( 2 )   2002

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  • STP法における絶縁膜形成特性の評価 (2) 実験

    工藤和久, 佐藤昇男, 矢野正樹, 亀井敏和, 石井仁, 町田克之

    応用物理学会学術講演会講演予稿集   63rd ( 2 )   2002

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  • Advanced Sensing Circuit and Sensor Structure for a High-Sensitive Capacitive Fingerprint Sensor LSI

    MORIMURA H., SHIGEMATSU S., SHIMAMURA T., SATO N., MACHIDA K., KYURAGI H.

    2001   280 - 281   2001.9

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  • A Pixel-Level Automatic Calibration Circuit Scheme for Sensing Initialization of a Capacitive Fingerprint Sensor LSI

    MORIMURA H., SHIGEMATSU S., SHIMAMURA T., MACHIDA K., KYURAGI H.

    Technical report of IEICE. SDM   101 ( 247 )   31 - 36   2001.7

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    We propose a pixel-level automatic calibration circuit scheme that initializes a capacitive fingerprint sensor LSI to eliminate the influence of the surface condition, which is degraded by dirt during practical use. The calibration is executed by adjusting variable capacitance in each pixel to make the sensed signals of all pixels the same. A fingerprint sensor LSI using the 0.5-μm CMOS process/sensor process demenstrates that clear fingerprint images are always obtained by the scheme though the surface condition degrades. The proposed scheme ensures consistent clear image capture during long-term usage.

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  • 異種機能融合化技術の研究動向 (特集論文1 システムデバイス実現のためのシームレスインテグレーション技術)

    久良木 億, 石井 仁, 町田 克之

    NTT R & D   50 ( 7 )   450 - 455   2001.7

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  • 高信頼性指紋センサLSIのプロセス技術 (特集論文1 システムデバイス実現のためのシームレスインテグレーション技術)

    町田 克之, 重松 智志, 森村 浩季

    NTT R & D   50 ( 7 )   456 - 462   2001.7

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  • STP法による厚膜絶縁膜形成技術 (特集論文1 システムデバイス実現のためのシームレスインテグレーション技術)

    佐藤 昇男, 町田 克之, 久良木 億

    NTT R & D   50 ( 7 )   470 - 475   2001.7

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  • A Single-Chip Fingerprint Sensor/Identifier LSI

    MORIMURA Hiroki, SHIGEMATSU Satoshi, SHIMAMURA Toshishige, MACHIDA Katsuyuki, KYURAGI Hakaru

    IEICE technical report. Electron devices   101 ( 161 )   129 - 136   2001.6

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    A single-chip fingerprint sensor/identifier LSI (FIL) that integrates the sensing function and identification system on a single chip has been developed. To realize the chip, we proposed a chip architecture, sensor structure/process, and a circuit scheme. A single-chip fingerprint sensor/identifier LSI built using a 0.5-μm CMOS process confirmed the effectiveness of the proposed techniques. This single-chip concept could lead to small highly secure identification system for mobile equipment.

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  • High Reliability Fingerprint Sensor LSI

    MACHIDA K., SHIGEMATSU S., MORIMURA H., TANABE Y., UNNO H., KYURAGI H.

    IEICE technical report. EMD   100 ( 624 )   25 - 31   2001.2

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    We describe a new semiconductor capacitive sensor structure and the fabrication process for a single-chip fingerprint sensor / identifier LSI in which the sensor is stacked on 0.5-μm CMOS LSI. To ascertain the influence of the fabrication process and usage on underlying LSI, sensor chipe were subjected to reliability tests of electrostatic discharge(ESD), mechanical stress, and water penetration. The reliability tests confirm that the proposed sensor has sufficient reliability for conventional identification usage.

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  • Thick on-chip interconnections by Cu-damascene processes using a photosensitive polymer

    SAITO Kunio, YAGI Shoji, KOSUGI Toshihiko, YAMAGUCHI Chikara, KUDO Kazuhisa, YANO Masaki, ISHII Hiromu, MACHIDA Katsuyuki, KYURAGI Hakaru

    Technical report of IEICE. SDM   100 ( 603 )   15 - 22   2001.1

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    On-chip interconnections as large as 10 μm have been formed using positive-type photosensitive polymer, Cu electroplating, and chemical-mechanical polishing. Low-k interlayer-dielectric (ILD) patterns were obtained by annealing the photosensitive polymer whose patterns were formed by UV exposure and developing. A spiral inductor with a high Q-value of 38 was obtained with reducing high-frequency power loss in the silicon substrate by forming 20-30-μm-thick low-k ILD with via holes between the silicon substrate and on-chip interconnection. A spiral inductor was formed on a voltage-controlled oscillator LSI and confirms its better performance. The characteristics of the spiral inductor are discussed using equivalent circuits with the lumped-element method. Coplanar waveguides with small transmission loss were also formed. Application of waveguides to the global interconnections in ULSIs is speculated.

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  • ワンチップ指紋認証センサLSIのためのセンサ構造とそのプロセス

    町田克之, 重松智志, 森村浩季, 佐藤昇男, 田辺泰之, 八木祥次, 石井仁, 海野秀之, 工藤和久, 矢野正樹, 熊崎利彦, 久良木億

    センサ・マイクロマシンと応用システムシンポジウム講演概要集   18th   2001

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  • On-Chip RF Interconnections by A New Thick-Film Process Using A Photosensitive Polymer

    SAITO Kunio, YAGI Shouji, KOSUGI Toshihiko, YAMAGUCHI Chikara, KUDO Kazuhisa, YANO Masaki, ISHII Hiromu, MACHIDA Katsuyuki, KYURAGI Hakaru

    Proceedings of the Society Conference of IEICE   2000 ( 1 )   72 - 72   2000.9

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  • A Capacitive Fingerprint Sensing Circuit Scheme with High Sensitivity, Wide Dynamic Range and Contrast Enhancement

    Morimura Hiroki, Shigematsu Satoshi, Machida Katsuyuki

    Proceedings of the Society Conference of IEICE   2000 ( 2 )   108 - 108   2000.9

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  • Fingerprint Identification System on a Single Chip Based on Advanced Circuit and Device Technologies

    SHIGEMATSU Satoshi, MORIMURA Hiroki, TANABE Yasuyuki, MACHIDA Katsuyuki, KYURAGI Hakaru

    2000   352 - 353   2000.8

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  • ワンチップ指紋認証LSI用センサ--超薄型,小型化,高信頼性を実現

    町田 克之, 重松 智志, 森村 浩季

    NTT技術ジャ-ナル   12 ( 6 )   70 - 72   2000.6

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  • The Influence of Stud Bumping above the MOSFETs on Device Reliability

    SHIMOYAMA Nobuhiro, MACHIDA Katsuyuki, SHIMAYA Masakazu, AKIYA Hideo, KYURAGI Hakaru

    IEICE transactions on fundamentals of electronics, communications and computer sciences   83 ( 5 )   851 - 856   2000.5

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    This paper presents the effect of stress on device degradation in metal-oxide-semiconductor field-effect transistors(MOSFETs)due to stud bumping. Stud bumping above the MOSFET region generates interface traps at the Si/SiO_2 interface and results in the degradation of transconductance in N-channel MOSFETs. The interface traps are apparently eliminated by both nitrogen and hydrogen annealing. However, the hot-carrier immunity after hydrogen annealing is one order of magnitude stronger than that after nitrogen annealing. This effect is explained by the termination of dangling bonds with hydrogen atoms.

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  • A High-Sensitive Sensing Circuit Scheme for Capacitive Fingerprint Sensors

    MORIMURA Hiroki, SHIGEMATSU Satoshi, MACHIDA Katsuyuki

    Technical report of IEICE. ICD   100 ( 41 )   1 - 6   2000.5

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    A novel capacitive fingerprint sensing scheme obtains an accurate fingerprint image through direct finger surface contact with a pixel array that includes sensor cells. A sensing circuit with a differential charge-transfer amplifier suppresses the influence of the parasitic capacitance. For high-resolution A / D conversion, the output dynamic range is widened by transforming the sensed voltage to a time axis. Moreover, the sensing circuit includes an automatic contrast emphasis scheme. The characteristics were evaluated by a test chip using the 0.5-μm CMOS process, and a single-chip fingerprint sensor / identifier LSI using this scheme is demonstrated.

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  • The Influence of Impact Stress Due to Stud Bumping on Device Degradation Region in Scaled MOSFETs

    SHIMOYAMA Nobuhiro, MACHIDA Katsuyuki, KOIZUMI Hiroshi, SHIMAYA Masakazu, KYURAGI Hakaru

    IEICE technical report. Reliability   99 ( 454 )   7 - 12   1999.11

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    This paper presents the effect of stud bumping above the MOSFET on device degradation in scaled MOSFETs. We have investigated the gate channel length dependence of g_m degradation after stud bumping above the MOSFETs and changes in the charge pumping currents for those devices. The von Mises's equivalent stress is used to simulate the distribution of mechanical stress at the gate edges. From the relationship between the distribution of the von Mises's equivalent stress and the change in the charge pumping currents after stud bumping, we show that stress concentrates within 0.1 μm of the gate edges. Furthermore, by estimating the amount of increased interface-state density we predicted that stud bumping stress greatly influences the device degradation of scaled MOS devices.

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  • A Single-chip Fingerprint Sensor and Identifier

    SHIGEMATSU Satoshi, MORIMURA Hiroki, Machida Katsuyuki

    Proceedings of the Society Conference of IEICE   1999 ( 2 )   109 - 109   1999.8

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  • A Single-chip Fingerprint Sensor and Identifier

    SHIGEMATSU Satoshi, MORIMURA Hiroki, MACHIDA Katsuyuki

    IEICE technical report. Electron devices   99 ( 146 )   1 - 6   1999.6

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    Nowadays, user authentication is strongly required to prevent user's mobile equipment from illegal use. This report presents the new LSI architecture which realizes to embed a fingerprint identification to these small equipment. The LSI architecture integrates fingerprint sensor and identifier in a single chip and to enhance the performance of the identifier using the parallel processing. The sensor which has electrical, physical and chemical tolerance is proposed. The sensor-unified fingerprint identifying LSI is fabricated using 0.5-μm CMOS, and the fingerprint sensing and identification is confirmed.

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  • Device Degradation Induced by Packaging Process After Area Bump Formation

    SHIMOYAMA N., MACHIDA K., SHIMAYA M., KYURAGI H.

    IEICE technical report. Reliability   98 ( 425 )   19 - 24   1998.11

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    This paper presents the effect of stress induced by packaging process on device degradation after area bump formation. Device degradation increases with the stress induced by the die-attachment process. When the stress is low, the degradation mainly comes from interface traps at the Si/SiO2 interface of the MOSFETs. However, when the stress is high, the degradation mainly arises from electron traps in the gate oxide. We show that post-baking at 300℃ eliminates the degradation. However, the degradation re-appears after post-baking. Therefore, we suggest that the post-baking condition and the type of potting material used are the most important factors affecting device reliability when packaging technology with area bump formation is used.

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  • Stress-Induced Device Degradation Due to Die-Attach Process after Area Bump Formation

    SHIMOYAMA Nobuhiro, MACHIDA Katsuyuki, SHIMAYA Masakazu, KYURAGI Hakaru

    1998   88 - 89   1998.9

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  • Effect of UV light irradiation on passivation of mobile ions in MOS devices

    ITSUMI Manabu, MACHIDA Katsuyuki, TAKAHASHI Jun-ichi, AKIYA Hideo, NAKAYAMA Satoshi, YOSHINO Hideo

    Technical report of IEICE. SDM   97 ( 240 )   13 - 20   1997.8

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    The effect of ultraviolet (UV) light irradiation on mobile ions in MOS devices was studied. MOS devices were intentionally contaminated with sodium during the interconnect formation process after the poly-Si gates were formed. After aluminum pad formation, these devices were irradiated with UV light (wavelength 240-370 nm) at elevated temperatures. Sodium-induced threshold-voltage shifts of active and parasitic MOS transistors were reduced to be zero during UV light irradiation. It is assumed that positive sodium ions in the oxides are neutralized with electrons excited by UV light irradiation.

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  • Device Degradation Due to Stud Bumping Above the MOSFETs and its Elimination Behavior by Annealing

    SHIMOYAMA N., MACHIDA K., SHIMAYA M., AKIYA H., KYURAGI H.

    IEICE technical report. Reliability   97 ( 118 )   13 - 18   1997.6

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    This paper presents the effect of stud bumping above the MOSFETs on device degradation. Stud bumping above the MOSFETs generates an interface trap at Si/SiO_2 interface that results in the degradation of mutual-conductance. This degradation is apparently eliminated by both N_2 and H_2 annealing. However, the lifetime after N_2 annealing is one order of magnitude shorter than that after H_2 annealing. Therefore, we conclude that device degradation is completely eliminated by terminating the Si dangling bonds induced by bump stress with hydrogen atoms.

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  • Analysis of Metallic Impurities in SIMOX Wafers

    KODATE J., MACHIDA K., IMAI K., TANAKA M., YABUMOTO N.

    Technical report of IEICE. SDM   95 ( 570 )   91 - 98   1996.3

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    Trace metallic impurities in SIMOX wafers are investigated by using atomic absorption spectrometry and total reflection X-ray fluorescence analysis. First, for the analysis of metallic impurities in the top Si layer of SIMOX wafers, we propose a new analytical method to combine vapor phase decomposition and atomic absorption spectrometry with electron cyclotron resonance plasma oxidation. The results reveal that a small amount of Fe contamination in the top Si layer of samples can be detected. Second, we use total reflection X-ray fluorescence analysis for the analysis of Cu in SIMOX wafers. We can detect Cu contamination at the interface between the buried oxide layer and the Si substrate.

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  • The WSix Interconnection Using WSixN Diffusion Barrier Formed with ECR Nitrogen Plasma

    HIRATA A., HOSOYA T., MACHIDA K., HONMA Y., AKIYA H.

    Technical report of IEICE. SDM   95 ( 497 )   1 - 7   1996.1

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    A tungsten silicon nitride (WSixN) layer is investigated as a dopant diffusion barrier for the tungsten silicide (WSix) interconnection. A very thin (5.0〜6.0nm) amorphous layer of WSixN is easily formed by simple WSix surface nitridation with ECR N_2 plasma. The WSixN layer acts as an excellent barrier to dopant diffusion during rapid thermal annealing (RTA) such as 1100℃ for 10 sec. By using the WSixN layer in the WSix interconnection, the high concentration of dopants at the WSix-diffusion layer interface is maintained even after RTA. As a result, the WSix contact electrode with low contact resistance is realized.

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  • Silicon Surface Cleaning by Oxidation with ECR Oxygen Plasma after Contact Hole Dry Etching

    Sakuma Kazuhito, Machida Katsuyuki, Sato Yoshiyuki, Kamoshida Kazuyoshi, Imai Kazuo, Arai Eisuke

    Technical report of IEICE. SDM   94 ( 194 )   37 - 44   1994.8

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    A simple technique for cleaning silicon surface after contact hole etching is proposed to obtain stable p^+ silicon contact characteristics for VLSI interconnections.The contaminated layer of the silicon contact surface after dry etching is first oxidized with ECR oxygen plasma and then removed with wet etching.From the XPS and SIMS analyses,the treated cleaned silicon contact surface is confirmed to be recovered to bare silicon surface.The analyses show that the instablity of the p^+ silicon contact is due to fluorine contamination.Thus oxidation with ECR oxygen plasma is an effective way to remove the fluorine and to obtain stable and low- resistance p^+ contact characteristics.

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  • An SiN diffusion barrier technology using ECR nitrogen plasma for polycide gate electrodes

    Hosoya Tetsuo, Machida Katsuyuki, Imai Kazuo, Arai Eisuke

    Technical report of IEICE. SDM   94 ( 185 )   59 - 64   1994.7

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    A simple diffusion barrier technology for polycide gate electrodes is proposed.An extremely thin silicon nitride layer is formed by poly Si surface nitridation with ECR nitrogen plasma of only nitrogen gas in a short discharge time.The silicon nitride layer acts as an excellent barrier to impurity diffusion from poly Si to silicide with good clectrkal conductivity.It is found that barrier formation with ECR nitroge plasma resalts.in no fatal degradation in MOS interface characteristics.This technology is very effective for making dual polycide gates with little increase in process cost due to its simplicity and good affinity with conventional ULSI fabrication processes.

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  • The influence of Water in Inter-Layer Dielectrics on Hot-Carrier Reliability in MOSFET′s

    Shimoyama Nobuhiro, Machida Katsuyuki, Takahashi Yasuo, Namatsu Hideo, Minegishi Kazushige

    IEICE technical report. Reliability   93 ( 272 )   1 - 6   1993.10

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    Water from SOG film and, or TEOS-03 SiO2 used as inter-layer dielectrics for multilevel interconnections of VLSI can lead to enhanced hot-carrier degradation and poor device reliability.To solve this probrem,it is very important to not only block water diffusing into underlaying film but also release water toward overlaying film.It is clarified that annealing with dielectrics structure of very thin ECR-SiO2 or plasma TEOS SiO2 overlayer is essential to release the water in SOG film or TEOS-O3 SiO2.This study suggests an ECR-SiO2 layer under the water contained layers and a plasma TEOS-SiO2 layer over those improve the hot-carrier tolerance by blocking and releasing water penetration.

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  • Silicidation using electron cyclotron resonance plasma

    M. Nagase, H. Ishii, K. Machida, H. Akiya

    J. Vac. Sci. Tech. B   10 ( 3 )   1087 - 1090   1992

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  • Bias-ECR Plasma Deposition

    MACHIDA Katsuyuki

    OYOBUTURI   57 ( 12 )   1927 - 1928   1988

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    Language：Japanese   Publisher：The Japan Society of Applied Physics  

    DOI： 10.11470/oubutsu1932.57.1927

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Presentations

  • MEMS加速度センサに向けた金めっき微小カンチレバーのヤング率に関する研究

    中島英亮, CHANG Tso‐Fu Mark, CHEN Chun‐Yi, 山根大輔, 小西敏文, 町田克之, 年吉洋, 伊藤浩之, 益一哉, 曽根正人

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2018.9 

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  • A 0.18-µm CMOS time-domain capacitive-sensor interface for sub-1mG MEMS accelerometers

    Motohiro Takayasu, Shiro Dosho, Hiroyuki Ito, Daisuke Yamane, Toshifumi Konishi, Katsuyuki Machida, Noboru Ishihara, Kazuya Masu

    IEICE Electronics Express  2018 

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  • Observation of Legionella fluorescence using photogate-type fluorescent sensor

    2017.10  Institute of Electrical Engineers of Japan

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    Event date： 2017.10

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  • Sub-1mG MEMS inertial sensors for biomedical applications

    Daisuke Yamane, Toshifumi Konishi, Hiroshi Toshiyoshi, Masato Sone, Katsuyuki Machida, Yoshihiro Miyake, Kazuya Masu

    2017 IEEE 12TH INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (NEMS)  2017  IEEE

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  • C-12-13 A study of CMOS low-noise amplifier design method

    Liu Anky, Konishi Toshifumi, Yamane Daisuke, Ito Hiroyuki, Dosho Shiro, Ishihara Noboru, Machida Katsuyuki, Masu Kazuya

    Proceedings of the IEICE General Conference  2016.3  The Institute of Electronics, Information and Communication Engineers

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  • Stress responses of bacteria confined in microfluidic chips

    2015.10  Institute of Electrical Engineers of Japan

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  • Low-power wireless pH monitoring FM Transmitter IC with Ion Sensitive Field Effect Transistor

    Shiino Yusuke, Fujiwara Taku, Nomura Satoshi, Ito Hiroyuki, Ishihara Noboru, Yamanouchi Hisashi, Tanabe Hiroki, Konishi Toshifumi, Machida Katsuyuki, Masu Kazuya

    Proceedings of the Society Conference of IEICE  2013.9  The Institute of Electronics, Information and Communication Engineers

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  • A Study on an Arrayed MEMS Accelerometer

    TSUKUDA Masafumi, YAMANE Daisuke, KAGAYA Ken, ITO Hiroyuki, ISHIHARA Nobiru, MASU Kazuya, KONISHI Toshifumi, MATSUSHIMA Takaaki, MACHIDA Katsuyuki, TOSHIYOSHI Hiroshi

    2013.8 

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  • C-12-57 A Study of Low-power pH monitoring FM Transmitter IC with lon Sensitive Field Effect Transistor

    Shiino Yusuke, Fujiwara Taku, Ito Hiroyuki, Ishihara Noboru, Yamauchi Hisashi, Tanabe Hiroki, Nomura Satoshi, Konishi Toshifumi, Machida Katsuyuki, Masu Kazuya

    Proceedings of the IEICE General Conference  2013.3  The Institute of Electronics, Information and Communication Engineers

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  • Integrated CMOS-MEMS Technology and Its Applications

    MORIMURA Hiroki, SHIMAMURA Toshishige, KUWABARA Kei, ONO Kazuyoshi, MACHIDA Katsuyuki

    The transactions of the Institute of Electronics, Information and Communication Engineers. C  2012.8  The Institute of Electronics, Information and Communication Engineers

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  • Integrated CMOS-MEMS Technology and Its Applications

    MORIMURA Hiroki, SHIMAMURA Toshishige, KUWABARA Kei, ONO Kazuyoshi, MACHIDA Katsuyuki

    IEICE technical report. Component parts and materials  2011.11  The Institute of Electronics, Information and Communication Engineers

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    Event date： 2011.11

    Language：Japanese  

    The paper describes integrated CMOS-MEMS technology and its applications. We discuss the features of integrated complementary metal-oxide-semiconductor-microelectromechanical systems (CMOS- MEMS). The prospect of this integration is also presented. A MEMS fingerprint sensor and a low-voltage radio frequency (RF) CMOS-MEMS switch are the case studies discussed. Moreover, Power-MEMS generator and sub-nanowatt sensing circuit techniques for batteryless sensor-node with a nanowatt energy harvester are presented. In conclusion, it is confirmed that the integrated CMOS-MEMS technology will pave the way for the More than Moore technology.

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  • The integrated CMOS-MEMS technology and its application

    2011.3 

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  • Novel MEMS Packaging Technology with Combining STP and Screen-Print Techniques

    MAYUMI Naruto, CHINO Mitsuru, TAZAWA Hiroshi, KAMEI Toshikazu, MACHIDA Katsuyuki, HIGURASHI Eiji

    The IEICE transactions on electronics C  2010.11  The Institute of Electronics, Information and Communication Engineers

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  • Low-power wireless pH sensing FM transmitter IC with Ion Sensitive Field Effect Transistor

    Fujiwara Taku, Ishihara Noboru, Amakawa Shuhei, Yamanouchi Hisashi, Tanabe Hiroki, Nomura Satoshi, Konishi Toshifumi, Machida Katsuyuki, Masu Kazuya

    Proceedings of the Society Conference of IEICE  2010.9  The Institute of Electronics, Information and Communication Engineers

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  • Wireless pH sensor module with an ISFET

    Fujiwara Taku, Ishihara Noboru, Amakawa Shuhei, Yamanouchi Hisashi, Tanabe Hiroyuki, Nomura Satoshi, Konishi Toshifumi, Machida Katsuyuki, Masu Kazuya

    Proceedings of the IEICE General Conference  2010.3  The Institute of Electronics, Information and Communication Engineers

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  • Impedance-Sensing Scheme for-Detection of Fraud using Fake Finger on Capacitive Fingerprint Sensor LSIs

    SHIMAMURA T., MORIMURA H., SHIMOYAMA N., SAKATA T., SHIGEMATSU S., NAKANISHI M., MACHIDA K.

    2009.11 

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    Event date： 2009.11

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  • C-12-32 The Capacitive-Sensing Circuit for Position Control of Movable Structure on CMOS-MEMS

    Shimamura T., Morimura H., Kuwabara K., Sato N., Machida K.

    Proceedings of the Society Conference of IEICE  2009.9  The Institute of Electronics, Information and Communication Engineers

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    Event date： 2009.9

    Language：Japanese  

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  • 集積化CMOS-MEMS技術とその応用 (特集 MEMS技術のパッケージ分野への応用)

    町田 克之, 森村 浩季, 武藤 伸一郎

    電子材料  2009.7  工業調査会

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    Event date： 2009.7

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  • C-12-70 Impedance-Sensing Scheme for Fingerprint Sensor LSI with Liveness Detection Function

    Shimamura T., Morimura H., Shimoyama N., Sakata T., Shigematsu S., Machida K., Nakanishi M.

    Proceedings of the IEICE General Conference  2009.3  The Institute of Electronics, Information and Communication Engineers

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  • The Integrated CMOS-MEMS Technology and Its Application

    MACHIDA Katsuyuki, MORIMURA Hiroki, MUTOH Shinichiro, SATO Yasuhiro

    IEICE technical report  2009.2  The Institute of Electronics, Information and Communication Engineers

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    Event date： 2009.2

    Language：Japanese  

    The paper describes the integrated CMOS-MEMS technology and its application. We discuss the features of the integrated CMOS-MEMS from the view point of the process and LSI fabrication. The prospect of the integrated CMOS-MEMS technology is presented at the potential of device performance. CMOS-MEMS fingerprint sensor and RF CMOS-MEMS switch devices are demonstrated as the application. In conclusion, it is confirmed that the integrated CMOS-MEMS technology will pave the way for the solution of the More than Moore.

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  • Integrated CMOS-MEMS Technology

    MORIMURA Hiroki, MUTOH Shinichiro, ISHII Hiromu, MACHIDA Katsuyuki

    The Journal of the Institute of Electronics, Information and Communication Engineers  2009.1  The Institute of Electronics, Information and Communication Engineers

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    Event date： 2009.1

    Language：Japanese  

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  • STP technology for the 3D structure sealing of MEMS devices and its application

    Material stage  2008.12 

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    Event date： 2008.12

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  • Electrodeposition of organic thin films for preventing sticking in MEMS devices

    Material stage  2008.12 

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    Event date： 2008.12

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  • The Integrated CMOS-MEMS Technology and Its Application

    2008.5 

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  • Electrodeposition of Organic Dielectric Film on MEMS Devices for Improvement of Reliability

    SAKATA Tomomi, KUWABARA Kei, SATO Norio, SHIMAMURA Toshishige, ISHII Hiromu, KUDOU Kazuhisa, MACHIDA Katsuyuki

    IEICE technical report  2008.4  The Institute of Electronics, Information and Communication Engineers

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    Event date： 2008.4

    Language：Japanese  

    This article introduces a technique that prevents sticking between actuator and control electrode in microelectromechanical-system (MEMS) devices. The technique involves the pretreatment with hydrochloric acid dipping and the electrodeposition of organic dielectric film on the gold electrode. Applying this technique to a vibrational MEMS device exhibits an excellent anti-sticking effect between the vibrator and the control electrode, ensuring high durability.

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  • Techniques for a Single-chip Fingerprint Identification LSI

    SHIGEMATSU Satoshi, MORIMURA Hiroki, HATANO Takahiro, NAKANISHI Mamoru, IKEDA Namiko, FUJII Koji, SHIMAMURA Toshishige, MACHIDA Katsuyuki, OKAZAKI Yukio, KYURAGI Hakaru

    2007.12 

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  • Integrated RF-MEMS and Its Packaging Technology

    KUWABARA Kei, SATO Norio, MACHIDA Katsuyuki, ISHII Hiromu, KAWASHIMA Munenari, YAMAGUCHI Yo, UEHARA Kazuhiro

    IEICE technical report  2007.1  The Institute of Electronics, Information and Communication Engineers

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    Event date： 2007.1

    Language：Japanese  

    This paper describes a novel integrated RF MEMS technology and its packaging technology for the fusion of RF MEMS devices and RF circuits. A multilayer structure is proposed to integrate various kinds of RF MEMS devices. A thin-film wafer-level encapsulation technique is also proposed to combine RF MEMS devices and RFICs by flip-chip mounting. A multiband VCO that integrates RF-MEMS switches and inductors was fabricated and its multiband operation was achieved.

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  • STP Technology –Interconnects, CMOS-MEMS, Packaging– (invited)

    Norio Sato, Hiromu Ishii, Katsuyuki Machida, Hideki Adachi

    Proc. 2007 Advanced Metallization, JSAP-MRS  2007 

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    Event date： 2007

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  • A Dual-Band VCO Integrated with RF-MEMS

    YAMAGUCHI Yo, KAWASHIMA Munenari, KUWABARA Kei, SATO Norio, MACHIDA Katsuyuki, UEHARA Kazuhiro

    IEICE technical report  2006.7  The Institute of Electronics, Information and Communication Engineers

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    Event date： 2006.7

    Language：Japanese  

    We propose a dual-band VCO integrated with RF-MEMS devices using flip-chip mounting. A wide frequency band switching capability is realized using low-loss RF-MEMS switches and high-Q inductors to switch one of series-connected inductors. A VCO with RF-MEMS was fabricated and measured. The carrier frequency of the dual-band VCO was tuned from 4.443 to 4.695GHz and from 5.106 to 5.411GHz. The phase noise was -103dBc/Hz at a 1-MHz offset from the carrier frequency of 4.443GHz.

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  • C-2-1 An Integrated VCO with RF-MEMS Using Flip Chip Mounting

    Kawashima Munenari, Yamaguchi Yo, Kuwabara Kei, Sato Norio, Machida Katsuyuki, Uehara Kazuhiro

    Proceedings of the IEICE General Conference  2006.3  The Institute of Electronics, Information and Communication Engineers

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    Event date： 2006.3

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  • The Seamless Integration Technology and Its Application

    Katsuyuki Machida, Norio Sato, Hiromu Ishii, Hiroki Morimura, Satoshi Shigematsu, Mamoru Nakanishi

    Journal of Japan Institute of Electronics Packaging  2006  Japan Institute of Electronics Packaging

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  • The Seamless Integration Technology and Its Application

    MACHIDA Katsuyuki, SATO Norio, ISHII Hiromu, MORIMURA Hiroki, SHIGEMATSU Satoshi, OKAZAKI Yukio

    2005.10 

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  • B-18-2 A Wireless Battery-powered Fingerprint Identification System for Ubiquitous User Authentication

    Shigematsu S., Hatano T., Morimura H., Machida K., Okazaki Y.

    Proceedings of the Society Conference of IEICE  2005.9  The Institute of Electronics, Information and Communication Engineers

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    Event date： 2005.9

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  • An Ultralow-Power Fingerprint Sensing Circuit Scheme for a Single-Chip Fingerprint Sensor/Identifier

    MORIMURA Hiroki, SHIMAMURA Toshishige, FUJII Koji, SHIGEMATSU Satoshi, OKAZAKI Yukio, MACHIDA Katsuyuki

    Technical report of IEICE. ICD  2004.5  The Institute of Electronics, Information and Communication Engineers

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    Event date： 2004.5

    Language：Japanese  

    A zero-sink-current Schmitt trigger and a window-flexible counting circuit are proposed for low-power and adjustable sensing of a single-chip fingerprint sensor/identifier LSI (FIL). The Schmitt trigger used for A/D conversion dramatically reduces the power dissipation, and the counting circuit used for evaluation of the image quality enhances the adjustability of fingerprint sensing. The proposed techniques were evaluated on the chip implemented in the 0.25μm CMOS and our sensor processes. The scheme achieved the ultralow-power sensing of 6.4μW/frame, which is 1/1500 that of a conventional chip, while the sensing adjustability is enhanced. This confirms the effectiveness of the ultralow-power fingerprint sensing circuit scheme suitable for a single-chip fingerprint sensor/identifier.

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  • Compact fingerprint verification devices: FingerToken

    Hiroki Suto, Satoshi Shigematsu, Takahiro Hatano, Chikara Yamaguchi, Yukio Okazaki, Katsuyuki Machida

    NTT Technical Review  2004.2 

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  • Compact Fingerprint Verification Device : FingerToken

    SUTO Hiroki, SHIGEMATSU Satoshi, HATANO Takahiro, YAMAGUCHI Chikara, OKAZAKI Yukio, MACHIDA Katsuyuki

    The Journal of Reliability Engineering Association of Japan  2004  Reliability Engineering Association of Japan

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  • Fingerprint Sensor LSI

    MACHIDA Katsuyuki, MORIMURA Hiroki, SHIGEMATSU Satoshi, OKAZAKI Yukio

    The Transactions of the Institute of Electronics, Information and Communication Engineers C  2003.7  The Institute of Electronics, Information and Communication Engineers

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    Event date： 2003.7

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  • Fingerprint image rotation scheme for a single-chip fingerprint identification LSI

    Shigematsu S., Fujii K., Morimura H., Hatano T., Nakanishi M., Ikeda N., Shimamura T., Machida K., Okazaki Y., Kyuragi H.

    Proceedings of the IEICE General Conference  2003.3  The Institute of Electronics, Information and Communication Engineers

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    Event date： 2003.3

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  • Novel Wafer-level Testing Scheme for Capacitive Fingerprint Sensor LSI's with Pixel Self-check

    SHIMAMURA Toshishige, MORIMURA Hiroki, SHIGEMATSU Satoshi, OKAZAKI Yukio, MACHIDA Katsuyuki, KYURAGI Hakaru

    IEICE technical report. Component parts and materials  2003.1  The Institute of Electronics, Information and Communication Engineers

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    Event date： 2003.1

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    This paper describes a novel testing scheme to select good capacitive fingerprint sensor LSI chips at the wafer level. A test function implemented in each sensor pixel simulates detection of a fingerprint pattern, eliminating the need of touching the sensor LSI. To self-check in the pixel, a dummy capacitor is used for the simulation of a finger. The pixel self-check detects disabled-pixels, whose output is abnormally fixed. The experimental results for a developed sensor LSI confirm that failures are accurately detected. The proposed testing scheme allows sensor pixels to check themselves without finger touching and enables the selection of good chips at the wafer level.

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  • A New Sensing and Digital-Conversion Scheme With Adaptive Image-Quality Adjustment for A Fingerprint Sensor Chip

    SHIGEMATSU Satoshi, MORIMURA Hiroki, MACHIDA Katsuyuki

    Technical report of IEICE. ICD  2002.9  The Institute of Electronics, Information and Communication Engineers

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    Event date： 2002.9

    Language：Japanese  

    A new fingerprint sensing and digital-conversion scheme is proposed. In this scheme, transforming the sensed signal to a time axis widens the dynamic range of the signal, and the transformed signal is converted to the digital signal with variable range and offset. These features make it possible to sense various fingerprints clearly. We also propose a flow that adjusts the quality of the fingerprint image adaptively. The effectiveness of the scheme on sensing fingerprints clearly was confirmed by a test chip fabricated using 0.5-μm CMOS/sensor process.

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  • The Influence of Impact Stress Due to Stud Bumping on Device Degradation Region in Scaled MOSFETs

    SHIMOYAMA Nobuhiro, MACHIDA Katsuyuki, KOIZUMI Hiroshi, SHIMAYA Masakazu, KYURAGI Hakaru

    IEICE technical report. Reliability  1999.11  The Institute of Electronics, Information and Communication Engineers

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    Event date： 1999.11

    Language：Japanese  

    This paper presents the effect of stud bumping above the MOSFET on device degradation in scaled MOSFETs. We have investigated the gate channel length dependence of g_m degradation after stud bumping above the MOSFETs and changes in the charge pumping currents for those devices. The von Mises's equivalent stress is used to simulate the distribution of mechanical stress at the gate edges. From the relationship between the distribution of the von Mises's equivalent stress and the change in the charge pumping currents after stud bumping, we show that stress concentrates within 0.1 μm of the gate edges. Furthermore, by estimating the amount of increased interface-state density we predicted that stud bumping stress greatly influences the device degradation of scaled MOS devices.

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  • A Single-chip Fingerprint Sensor and Identifier

    SHIGEMATSU Satoshi, MORIMURA Hiroki, Machida Katsuyuki

    Proceedings of the Society Conference of IEICE  1999.8  The Institute of Electronics, Information and Communication Engineers

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    Event date： 1999.8

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  • A Single-chip Fingerprint Sensor and Identifier

    SHIGEMATSU Satoshi, MORIMURA Hiroki, MACHIDA Katsuyuki

    IEICE technical report. Electron devices  1999.6  The Institute of Electronics, Information and Communication Engineers

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    Event date： 1999.6

    Language：Japanese  

    Nowadays, user authentication is strongly required to prevent user's mobile equipment from illegal use. This report presents the new LSI architecture which realizes to embed a fingerprint identification to these small equipment. The LSI architecture integrates fingerprint sensor and identifier in a single chip and to enhance the performance of the identifier using the parallel processing. The sensor which has electrical, physical and chemical tolerance is proposed. The sensor-unified fingerprint identifying LSI is fabricated using 0.5-μm CMOS, and the fingerprint sensing and identification is confirmed.

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  • Device Degradation Induced by Packaging Process After Area Bump Formation

    SHIMOYAMA N., MACHIDA K., SHIMAYA M., KYURAGI H.

    IEICE technical report. Reliability  1998.11  The Institute of Electronics, Information and Communication Engineers

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    Event date： 1998.11

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    This paper presents the effect of stress induced by packaging process on device degradation after area bump formation. Device degradation increases with the stress induced by the die-attachment process. When the stress is low, the degradation mainly comes from interface traps at the Si/SiO2 interface of the MOSFETs. However, when the stress is high, the degradation mainly arises from electron traps in the gate oxide. We show that post-baking at 300℃ eliminates the degradation. However, the degradation re-appears after post-baking. Therefore, we suggest that the post-baking condition and the type of potting material used are the most important factors affecting device reliability when packaging technology with area bump formation is used.

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  • Effect of UV light irradiation on passivation of mobile ions in MOS devices

    ITSUMI Manabu, MACHIDA Katsuyuki, TAKAHASHI Jun-ichi, AKIYA Hideo, NAKAYAMA Satoshi, YOSHINO Hideo

    Technical report of IEICE. SDM  1997.8  The Institute of Electronics, Information and Communication Engineers

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    Event date： 1997.8

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    The effect of ultraviolet (UV) light irradiation on mobile ions in MOS devices was studied. MOS devices were intentionally contaminated with sodium during the interconnect formation process after the poly-Si gates were formed. After aluminum pad formation, these devices were irradiated with UV light (wavelength 240-370 nm) at elevated temperatures. Sodium-induced threshold-voltage shifts of active and parasitic MOS transistors were reduced to be zero during UV light irradiation. It is assumed that positive sodium ions in the oxides are neutralized with electrons excited by UV light irradiation.

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  • Device Degradation Due to Stud Bumping Above the MOSFETs and its Elimination Behavior by Annealing

    SHIMOYAMA N., MACHIDA K., SHIMAYA M., AKIYA H., KYURAGI H.

    IEICE technical report. Reliability  1997.6  The Institute of Electronics, Information and Communication Engineers

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    Event date： 1997.6

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    This paper presents the effect of stud bumping above the MOSFETs on device degradation. Stud bumping above the MOSFETs generates an interface trap at Si/SiO_2 interface that results in the degradation of mutual-conductance. This degradation is apparently eliminated by both N_2 and H_2 annealing. However, the lifetime after N_2 annealing is one order of magnitude shorter than that after H_2 annealing. Therefore, we conclude that device degradation is completely eliminated by terminating the Si dangling bonds induced by bump stress with hydrogen atoms.

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  • Analysis of Metallic Impurities in SIMOX Wafers

    KODATE J., MACHIDA K., IMAI K., TANAKA M., YABUMOTO N.

    Technical report of IEICE. SDM  1996.3  The Institute of Electronics, Information and Communication Engineers

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    Event date： 1996.3

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    Trace metallic impurities in SIMOX wafers are investigated by using atomic absorption spectrometry and total reflection X-ray fluorescence analysis. First, for the analysis of metallic impurities in the top Si layer of SIMOX wafers, we propose a new analytical method to combine vapor phase decomposition and atomic absorption spectrometry with electron cyclotron resonance plasma oxidation. The results reveal that a small amount of Fe contamination in the top Si layer of samples can be detected. Second, we use total reflection X-ray fluorescence analysis for the analysis of Cu in SIMOX wafers. We can detect Cu contamination at the interface between the buried oxide layer and the Si substrate.

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  • The WSix Interconnection Using WSixN Diffusion Barrier Formed with ECR Nitrogen Plasma

    HIRATA A., HOSOYA T., MACHIDA K., HONMA Y., AKIYA H.

    Technical report of IEICE. SDM  1996.1  The Institute of Electronics, Information and Communication Engineers

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    Event date： 1996.1

    Language：Japanese  

    A tungsten silicon nitride (WSixN) layer is investigated as a dopant diffusion barrier for the tungsten silicide (WSix) interconnection. A very thin (5.0〜6.0nm) amorphous layer of WSixN is easily formed by simple WSix surface nitridation with ECR N_2 plasma. The WSixN layer acts as an excellent barrier to dopant diffusion during rapid thermal annealing (RTA) such as 1100℃ for 10 sec. By using the WSixN layer in the WSix interconnection, the high concentration of dopants at the WSix-diffusion layer interface is maintained even after RTA. As a result, the WSix contact electrode with low contact resistance is realized.

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  • Silicon Surface Cleaning by Oxidation with ECR Oxygen Plasma after Contact Hole Dry Etching

    Sakuma Kazuhito, Machida Katsuyuki, Sato Yoshiyuki, Kamoshida Kazuyoshi, Imai Kazuo, Arai Eisuke

    Technical report of IEICE. SDM  1994.8  The Institute of Electronics, Information and Communication Engineers

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    Event date： 1994.8

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    A simple technique for cleaning silicon surface after contact hole etching is proposed to obtain stable p^+ silicon contact characteristics for VLSI interconnections.The contaminated layer of the silicon contact surface after dry etching is first oxidized with ECR oxygen plasma and then removed with wet etching.From the XPS and SIMS analyses,the treated cleaned silicon contact surface is confirmed to be recovered to bare silicon surface.The analyses show that the instablity of the p^+ silicon contact is due to fluorine contamination.Thus oxidation with ECR oxygen plasma is an effective way to remove the fluorine and to obtain stable and low- resistance p^+ contact characteristics.

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  • An SiN diffusion barrier technology using ECR nitrogen plasma for polycide gate electrodes

    Hosoya Tetsuo, Machida Katsuyuki, Imai Kazuo, Arai Eisuke

    Technical report of IEICE. SDM  1994.7  The Institute of Electronics, Information and Communication Engineers

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    Event date： 1994.7

    Language：English  

    A simple diffusion barrier technology for polycide gate electrodes is proposed.An extremely thin silicon nitride layer is formed by poly Si surface nitridation with ECR nitrogen plasma of only nitrogen gas in a short discharge time.The silicon nitride layer acts as an excellent barrier to impurity diffusion from poly Si to silicide with good clectrkal conductivity.It is found that barrier formation with ECR nitroge plasma resalts.in no fatal degradation in MOS interface characteristics.This technology is very effective for making dual polycide gates with little increase in process cost due to its simplicity and good affinity with conventional ULSI fabrication processes.

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  • The influence of Water in Inter-Layer Dielectrics on Hot-Carrier Reliability in MOSFET′s

    Shimoyama Nobuhiro, Machida Katsuyuki, Takahashi Yasuo, Namatsu Hideo, Minegishi Kazushige

    IEICE technical report. Reliability  1993.10  The Institute of Electronics, Information and Communication Engineers

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    Event date： 1993.10

    Language：Japanese  

    Water from SOG film and, or TEOS-03 SiO2 used as inter-layer dielectrics for multilevel interconnections of VLSI can lead to enhanced hot-carrier degradation and poor device reliability.To solve this probrem,it is very important to not only block water diffusing into underlaying film but also release water toward overlaying film.It is clarified that annealing with dielectrics structure of very thin ECR-SiO2 or plasma TEOS SiO2 overlayer is essential to release the water in SOG film or TEOS-O3 SiO2.This study suggests an ECR-SiO2 layer under the water contained layers and a plasma TEOS-SiO2 layer over those improve the hot-carrier tolerance by blocking and releasing water penetration.

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  • Bias-ECR Plasma Deposition

    MACHIDA Katsuyuki

    OYOBUTURI  1988  The Japan Society of Applied Physics

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    Event date： 1988

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  • 設計支援装置

    小西 敏文, 松島 隆明, 町田 克之, 年吉 洋

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    Applicant：エヌ・ティ・ティ・アドバンステクノロジ株式会社, 国立大学法人 東京大学

    Application no：特願2012-152095  Date applied：2012.7

    Announcement no：特開2014-016695  Date announced：2014.1

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  • 半導体装置の製造方法

    工藤 和久, 矢野 正樹, 小西 敏文, 亀井 敏和, 松島 隆明, 町田 克之

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    Applicant：エヌ・ティ・ティ・アドバンステクノロジ株式会社

    Application no：特願2010-085893  Date applied：2010.4

    Announcement no：特開2011-216812  Date announced：2011.10

    Patent/Registration no：特許第5197670号  Date registered：2013.2 

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  • 半導体装置の製造方法

    工藤 和久, 矢野 正樹, 小西 敏文, 亀井 敏和, 松島 隆明, 町田 克之

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    Applicant：エヌ・ティ・ティ・アドバンステクノロジ株式会社

    Application no：特願2010-085893  Date applied：2010.4

    Announcement no：特開2011-216812  Date announced：2011.10

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  • 半導体装置の製造方法および半導体装置

    足立 秀喜, 町田 克之

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    Applicant：大日本スクリーン製造株式会社, エヌ・ティ・ティ・アドバンステクノロジ株式会社

    Application no：特願2007-308421  Date applied：2007.11

    Announcement no：特開2009-135172  Date announced：2009.6

    Patent/Registration no：特許第5149603号  Date registered：2012.12 

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  • 半導体装置の製造方法および半導体装置

    足立 秀喜, 町田 克之

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    Applicant：大日本スクリーン製造株式会社, エヌ・ティ・ティ・アドバンステクノロジ株式会社

    Application no：特願2007-308421  Date applied：2007.11

    Announcement no：特開2009-135172  Date announced：2009.6

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  • 微細構造体の製造方法

    佐藤 昇男, 石井 仁, 小野 一善, 亀井 敏和, 町田 克之, 生津 英夫

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    Applicant：日本電信電話株式会社, エヌ・ティ・ティ・アドバンステクノロジ株式会社

    Application no：特願2006-292213  Date applied：2006.10

    Announcement no：特開2008-109004  Date announced：2008.5

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  • 配線構造の製造方法

    町田 克之, 斎藤 國夫, 石井 仁, 久良木 億

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    Applicant：日本電信電話株式会社

    Application no：特願2005-175970  Date applied：2005.6

    Announcement no：特開2005-354084  Date announced：2005.12

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  • 半導体装置及びその製造方法

    石井 仁, 佐藤 昇男, 浦野 正美, 町田 克之, 阪田 知巳

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    Applicant：日本電信電話株式会社

    Application no：特願2005-006242  Date applied：2005.1

    Announcement no：特開2006-196654  Date announced：2006.7

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  • 半導体装置及びその製造方法

    小舘 淳一, 町田 克之, 浦野 正美

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    Applicant：日本電信電話株式会社

    Application no：特願2005-001220  Date applied：2005.1

    Announcement no：特開2006-190804  Date announced：2006.7

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  • 半導体装置の製造方法

    小舘 淳一, 町田 克之, 浦野 正美

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    Applicant：日本電信電話株式会社

    Application no：特願2005-001220  Date applied：2005.1

    Announcement no：特開2006-190804  Date announced：2006.7

    Patent/Registration no：特許第4323435号  Date registered：2009.6 

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  • 可変容量素子及びその製造方法

    小舘 淳一, 町田 克之, 浦野 正美, 桑原 啓, 寺田 純

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    Applicant：日本電信電話株式会社

    Application no：特願2004-338807  Date applied：2004.11

    Announcement no：特開2006-147995  Date announced：2006.6

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  • 可変容量素子及びその製造方法

    小舘 淳一, 町田 克之, 浦野 正美, 桑原 啓, 寺田 純

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    Applicant：日本電信電話株式会社

    Application no：特願2004-338807  Date applied：2004.11

    Announcement no：特開2006-147995  Date announced：2006.6

    Patent/Registration no：特許第4410085号  Date registered：2009.11 

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  • 半導体装置及びその製造方法

    小舘 淳一, 町田 克之, 浦野 正美, 束原 恒夫

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    Application no：特願平11-006444  Date applied：1999.1

    Announcement no：特開2000-208018  Date announced：2000.7

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    Application no：特願平11-001170  Date applied：1999.1

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    Application no：特願平11-001170  Date applied：1999.1

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    Application no：特願平10-243444  Date applied：1998.8

    Announcement no：特開2000-077617  Date announced：2000.3

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    Application no：特願平10-229766  Date applied：1998.8

    Announcement no：特開2000-058760  Date announced：2000.2

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    Application no：特願平10-229766  Date applied：1998.8

    Announcement no：特開2000-058760  Date announced：2000.2

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    Application no：特願平10-222810  Date applied：1998.8

    Announcement no：特開2000-057285  Date announced：2000.2

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    Application no：特願平10-222810  Date applied：1998.8

    Announcement no：特開2000-057285  Date announced：2000.2

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    Application no：特願平10-188829  Date applied：1998.7

    Announcement no：特開2000-022093  Date announced：2000.1

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    Application no：特願平10-188829  Date applied：1998.7

    Announcement no：特開2000-022093  Date announced：2000.1

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    小川 重男, 逸見 学, 町田 克之

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    Application no：特願平10-157224  Date applied：1998.6

    Announcement no：特開平11-354731  Date announced：1999.12

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    小川 重男, 逸見 学, 町田 克之

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    Application no：特願平10-157224  Date applied：1998.6

    Announcement no：特開平11-354731  Date announced：1999.12

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    町田 克之, 枚田 明彦, 重松 智志, 森村 浩季

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    Application no：特願平10-135036  Date applied：1998.5

    Announcement no：特開平11-318864  Date announced：1999.11

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    Application no：特願平10-095815  Date applied：1998.4

    Announcement no：特開平11-297931  Date announced：1999.10

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  • 表面形状認識用センサおよびその製造方法

    町田 克之, 枚田 明彦, 重松 智志, 森村 浩季

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    Application no：特願平10-053911  Date applied：1998.3

    Announcement no：特開平11-248410  Date announced：1999.9

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    Application no：特願平10-522370  Date applied：1997.10

    Patent/Registration no：特許第3420590号  Date registered：2003.4 

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    Application no：JP1997003979  Date applied：1997.10

    Publication no：WO1998-021750  Date published：1998.5

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    Application no：特願平9-153399  Date applied：1997.6

    Announcement no：特開平11-004008  Date announced：1999.1

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    Application no：特願平9-128370  Date applied：1997.5

    Announcement no：特開平10-321621  Date announced：1998.12

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    Application no：特願平9-128370  Date applied：1997.5

    Announcement no：特開平10-321621  Date announced：1998.12

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    Application no：特願平9-125315  Date applied：1997.5

    Announcement no：特開平10-321617  Date announced：1998.12

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    枚田 明彦, 町田 克之, 久良木 億

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    Application no：特願平9-119572  Date applied：1997.5

    Announcement no：特開平10-313139  Date announced：1998.11

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    Application no：特願平9-119572  Date applied：1997.5

    Announcement no：特開平10-313139  Date announced：1998.11

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    Application no：特願平9-099111  Date applied：1997.4

    Announcement no：特開平10-032198  Date announced：1998.2

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    Application no：特願平9-099111  Date applied：1997.4

    Announcement no：特開平10-032198  Date announced：1998.2

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    Application no：特願平8-285140  Date applied：1996.10

    Announcement no：特開平10-135605  Date announced：1998.5

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    Application no：特願平8-285140  Date applied：1996.10

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    Application no：特願平8-285161  Date applied：1996.10

    Announcement no：特開平10-135214  Date announced：1998.5

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    Applicant：日本電信電話株式会社

    Application no：特願平8-238744  Date applied：1996.9

    Announcement no：特開平10-082825  Date announced：1998.3

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    Applicant：日本電信電話株式会社, 触媒化成工業株式会社

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    Announcement no：特開平9-199493  Date announced：1997.7

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    Application no：特願平8-004905  Date applied：1996.1

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    Application no：特願平7-107246  Date applied：1995.5

    Announcement no：特開平8-306862  Date announced：1996.11

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    Application no：特願平7-088163  Date applied：1995.4

    Announcement no：特開平8-288288  Date announced：1996.11

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    Application no：特願平7-088163  Date applied：1995.4

    Announcement no：特開平8-288288  Date announced：1996.11

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    Application no：特願平6-140750  Date applied：1994.6

    Announcement no：特開平7-326617  Date announced：1995.12

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    Application no：特願平5-340383  Date applied：1993.12

    Announcement no：特開平7-161795  Date announced：1995.6

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    Announcement no：特開平7-161795  Date announced：1995.6

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    Application no：特願平5-132937  Date applied：1993.5

    Announcement no：特開平7-006995  Date announced：1995.1

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    Application no：特願平5-082710  Date applied：1993.3

    Announcement no：特開平6-275637  Date announced：1994.9

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    Application no：特願平5-059324  Date applied：1993.2

    Announcement no：特開平6-252275  Date announced：1994.9

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    Application no：特願平5-059324  Date applied：1993.2

    Announcement no：特開平6-252275  Date announced：1994.9

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    Application no：特願平5-044337  Date applied：1993.2

    Announcement no：特開平6-236994  Date announced：1994.8

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    Application no：特願平5-044337  Date applied：1993.2

    Announcement no：特開平6-236994  Date announced：1994.8

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    Application no：特願平4-329913  Date applied：1992.11

    Announcement no：特開平6-163522  Date announced：1994.6

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    Application no：特願平4-329912  Date applied：1992.11

    Announcement no：特開平6-163521  Date announced：1994.6

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    Application no：特願平4-329913  Date applied：1992.11

    Announcement no：特開平6-163522  Date announced：1994.6

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    Application no：特願平4-149236  Date applied：1992.6

    Announcement no：特開平5-343400  Date announced：1993.12

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    Application no：特願平4-113042  Date applied：1992.4

    Announcement no：特開平5-291413  Date announced：1993.11

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    Application no：特願平4-027516  Date applied：1992.1

    Announcement no：特開平5-198690  Date announced：1993.8

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    Announcement no：特開平5-160124  Date announced：1993.6

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    Application no：特願平3-185875  Date applied：1991.7

    Announcement no：特開平5-009742  Date announced：1993.1

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    Application no：特願平1-182540  Date applied：1989.7

    Announcement no：特開平3-048440  Date announced：1991.3

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    Applicant：日本電信電話株式会社

    Application no：特願平1-131538  Date applied：1989.5

    Announcement no：特開平2-310926  Date announced：1990.12

    Patent/Registration no：特許第2514250号  Date registered：1996.4 

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  • 半導体装置の製造方法

    町田 克之, 及川 秀男

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    Applicant：日本電信電話株式会社

    Application no：特願平1-101554  Date applied：1989.4

    Announcement no：特開平2-281735  Date announced：1990.11

    Patent/Registration no：特許第2547845号  Date registered：1996.8 

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  • 半導体装置の製造方法

    町田 克之, 及川 秀男, 君塚 正勝, 守屋 茂

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    Applicant：日本電信電話株式会社

    Application no：特願昭63-240932  Date applied：1988.9

    Announcement no：特開平2-090526  Date announced：1990.3

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  • 半導体装置の製造方法

    橋本 千里, 町田 克之, 及川 秀男

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    Applicant：日本電信電話株式会社

    Application no：特願昭62-185384  Date applied：1987.7

    Announcement no：特開平1-030228  Date announced：1989.2

    Patent/Registration no：特許第2563180号  Date registered：1996.9 

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  • 半導体装置の製造方法

    橋本 千里, 町田 克之, 及川 秀男

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    Applicant：日本電信電話株式会社

    Application no：特願昭62-178977  Date applied：1987.7

    Announcement no：特開平1-023554  Date announced：1989.1

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  • 半導体集積回路の配線構造

    町田 克之, 小林 敏夫, 松井 則夫

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    Applicant：日本電信電話株式会社

    Application no：特願昭61-151007  Date applied：1986.6

    Announcement no：特開昭63-007650  Date announced：1988.1

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  • 半導体装置の製造法

    町田 克之, 及川 秀男

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    Applicant：日本電信電話株式会社

    Application no：特願昭60-026558  Date applied：1985.2

    Announcement no：特開昭61-187340  Date announced：1986.8

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Research Projects

  • Dynamic Processes of Bacterial Stress Response: Development of Novel Bacterial Identification Method Inspired by Electronics

    Grant number：19H02196  2019.4 - 2022.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)  Grant-in-Aid for Scientific Research (B)

    Ishii Hiromu

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    Grant amount：\17420000 （ Direct Cost: \13400000 、 Indirect Cost：\4020000 ）

    Legionella species, one of the pathogenic bacteria that are endemic to the environment such as biofilms, was used as a model bacterium to elucidate the dynamic process of bacteria. The dynamic process of the stress response of Legionella species to UV light was described by the reaction kinetics as the decrease and increase of intracellular fluorescent substances. We also developed a bacterial sensor system by hybridizing a photogate-type bacterial sensor with a MEMS microfluidic. That is, we developed a compact and portable bacterial sensor system of about 3.5x13 cm2 by mounting a photogate-type bacterial sensor and a MEMS microfluidic in a housing fabricated by a 3D printer. Using this bacterial sensor system, we observed the dynamic process of fluorescence of Legionella bacteria and succeeded in identifying Legionella species.

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  • Electronics Inspired Bacterial Ethology

    Grant number：15H03992  2015.4 - 2019.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)  Grant-in-Aid for Scientific Research (B)

    Ishii Hiromu

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    Grant amount：\16380000 （ Direct Cost: \12600000 、 Indirect Cost：\3780000 ）

    We observed stress responses of bacteria using integrated MEMS technology to know the behavior of bacteria in the human cells or under sunlight. We found a new fluorescent material production of Legionella as a stress response to ultraviolet light irradiation and movement restriction in micro spaces of microfluidic chips. We succeeded in detecting the fluorescence from Legionella by using photogate-type optical sensor. This result paved the way to the realization of a bacterial sensor chip.

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  • Development of Nano-G Detection Method using Electroplated Au-Alloy with Controlled Crystal Structure

    Grant number：15K17453  2015.4 - 2018.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Young Scientists (B)  Grant-in-Aid for Young Scientists (B)

    Yamane Daisuke, MASU Kazuya, MACHIDA Katsuyuki, SONE Masato

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    Grant amount：\4290000 （ Direct Cost: \3300000 、 Indirect Cost：\990000 ）

    Noise of the developed Au-alloy MEMS accelerometer was experimentally evaluated to be below 30 nG/√Hz, and therefore we achieved the target resolution of below 0.1 uG. Long-term vibration test results showed the device functioned even after 10^6 vibration cycles that would usually cause fatigue in metal materials. Temperature test results exhibited the device survived after temperature change from -50 ℃ to 100 ℃. Furthermore, we developed a sensing module with the fabricated MEMS device and demonstrated acceleration sensing on human body. In terms of mechanical strength of Au-alloy, we successfully developed an Au-alloy material with the yield strength of above the target value (1 GPa). In conclusion, the developed Au-alloy device has a promising potential to detect nano-G.

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  • The study on human monitoring chip and multi-physics simulation technology

    Grant number：23360149  2011.4 - 2014.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)  Grant-in-Aid for Scientific Research (B)

    MACHIDA KATSUYUKI, TOSHIYOSHI Hiroshi, MASU Kazuya, ISHIHARA Noboru

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    Grant amount：\17290000 （ Direct Cost: \13300000 、 Indirect Cost：\3990000 ）

    The research was performed to investigate multi-physics simulation, MEMS design, and CMOS sensor circuit technology for a new human monitoring CMOS-MEMS device. The results are as follows; i) the multi-physics simulation platform for the technology was developed to understand simultaneously both the mechanical and electrical behaviors of MEMS stacked on LSI for the first time. ii)the proposed MEMS structure by the post-CMOS process on CMOS circuit and the proposed arrayed CMOS-MEMS accelerometer with a wide detection range were developed. iii)we confirmed the realization of the sub-1G MEMS accelerometer. iv) the versatile capacitive CMOS-MEMS sensor circuit to a MEMS sensor was proposed. Using our simulation platform and fabrication trials, we cofirmed the validity of the technical concept. v) the proposed equivelent circuit model for vibration device was confirmed by simulation. As a result, it is confirmed that the basic technology for the integrated CMOS-MEMS device was established.

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  • Fundamental Research on MEMS-based Bacterial Sensor

    Grant number：23560394  2011 - 2013

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C)  Grant-in-Aid for Scientific Research (C)

    ISHII Hiromu, KATSUYUKI Machida, SHIN-ICHI Yoshida

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    Grant amount：\5460000 （ Direct Cost: \4200000 、 Indirect Cost：\1260000 ）

    Sensing bacteria is attracting a great deal of interest to avoid an outbreak of bacterial infection. The sensors used for this purpose should integrate at least two functions in a small volume: trapping bacteria and detecting them. We developed a PDMS-based microfluidic chip for trapping and detecting L. pneumophila cells. By using our finding that L. pneumophila might emit fluorescence when they are forced to limit their motion in a narrow space, we can observe fluorescence from L. pneumophila cells introduced into the chip together with microbeads: We previously make a mixed suspension of L. pneumophila cells and the beads and then introduce them into the microfluidic chip with funnel-shaped protrusions which work as stoppers both for the cells and the beads. The cells are densely packed at the inlet side of the stoppers and restricted their motion confined by microbeads. This method enables us to expect the observation of fluorescence from the L. pneumophila cells introduced.

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