Organization
School of Science Associate Professor
Title
Associate Professor
External link
PU JIANG
Degree
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博士（工学） ( 早稲田大学 )
Research Interests
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Optoelectronics
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Electronics
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Atomically thin materials
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Electrolyte
Research Areas
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Nanotechnology/Materials / Applied condensed matter physics
Education
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Waseda University Advanced Science and Engineering Advanced Science and Engineering
2012.4 - 2017.3
Country： Japan
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Waseda University Advanced Science and Engineering Applied Physics
2008.4 - 2012.3
Country： Japan
Research History
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Tokyo Institute of Technology Department of Physics Associate Professor
2023.4
Country：Japan
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Nagoya University Graduate School of Engineering Applied Physics 1 Assistant Professor
2017.4 - 2023.3
Professional Memberships
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The Japan Society of Applied Physics
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Japan Physics Society
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The Fullerenes, Nanotubes and Graphene Research Society
Papers
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Continuous Strain Modulation of Moiré Superlattice Symmetry From Triangle to Rectangle. International journal
Hao Ou, Koshi Oi, Rei Usami, Takahiko Endo, Keisuke Shinokita, Ryo Kitaura, Kazunari Matsuda, Yasumitsu Miyata, Jiang Pu, Taishi Takenobu
Small (Weinheim an der Bergstrasse, Germany) e2407316 2025.1
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Yugo Oshima, Taishi Takenobu, Jiang Pu, Keisuke Ishiguro, Reizo Kato, Hiroshi M. Yamamoto, Tetsuro Kusamoto
Advanced Physics Research 3 ( 4 ) 2023.12
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Solution-Processable Ultrapure-Blue Light-Emitting Electrochemical Cells
Yuki Tanaka, Shun-ichiro Ito, Junfeng Liu, Hao Ou, Hisaaki Tanaka, Jiang Pu, Atsuhiro Ikeno, Takuji Hatakeyama, Taishi Takenobu
ADVANCED OPTICAL MATERIALS 11 ( 17 ) 2023.9
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Vapor-Phase Indium Intercalation in van der Waals Nanofibers of Atomically Thin W6Te6 Wires
Ryusuke Natsui, Hiroshi Shimizu, Yusuke Nakanishi, Zheng Liu, Akito Shimamura, Nguyen Tuan Hung, Yung-Chang Lin, Takahiko Endo, Jiang Pu, Iori Kikuchi, Taishi Takenobu, Susumu Okada, Kazu Suenaga, Riichiro Saito, Yasumitsu Miyata
ACS Nano 17 ( 6 ) 5561 - 5569 2023.2
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Hao Ou, Koshi Oi, Rei Usami, Takahiko Endo, Yasumitsu Miyata, Jiang Pu, Taishi Takenobu
Japanese Journal of Applied Physics 62 ( SC ) SC1026 - SC1026 2023.1
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Efficient and Chiral Electroluminescence from In-Plane Heterostructure of Transition Metal Dichalcogenide Monolayers
Naoki Wada, Jiang Pu, Yuhei Takaguchi, Wenjin Zhang, Zheng Liu, Takahiko Endo, Toshifumi Irisawa, Kazunari Matsuda, Yuhei Miyauchi, Taishi Takenobu, Yasumitsu Miyata
ADVANCED FUNCTIONAL MATERIALS 32 ( 40 ) 2022.10
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Jiang Pu, Hao Ou, Tomoyuki Yamada, Naoki Wada, Hibiki Naito, Hiroto Ogura, Takahiko Endo, Zheng Liu, Toshifumi Irisawa, Kazuhiro Yanagi, Yusuke Nakanishi, Yanlin Gao, Mina Maruyama, Susumu Okada, Keisuke Shinokita, Kazunari Matsuda, Yasumitsu Miyata, Taishi Takenobu
Advanced Materials 2203250 - 2203250 2022.9
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Large-Scale 1T′-Phase Tungsten Disulfide Atomic Layers Grown by Gas-Source Chemical Vapor Deposition
Mitsuhiro Okada, Jiang Pu, Yung-Chang Lin, Takahiko Endo, Naoya Okada, Wen-Hsin Chang, Anh Khoa Augustin Lu, Takeshi Nakanishi, Tetsuo Shimizu, Toshitaka Kubo, Yasumitsu Miyata, Kazu Suenaga, Taishi Takenobu, Takatoshi Yamada, Toshifumi Irisawa
ACS Nano 2022.7
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Hayato Sakai, Keisuke Yoshino, Yoshiaki Shoji, Takashi Kajitani, Jiang Pu, Takanori Fukushima, Taishi Takenobu, Nikolai V. Tkachenko, Taku Hasobe
The Journal of Physical Chemistry C 126 ( 22 ) 9396 - 9406 2022.6
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Formation of a Two-Dimensional Electronic System in Laterally Assembled WTe Nanowires
Hiroshi Shimizu, Jiang Pu, Zheng Liu, Hong En Lim, Mina Maruyama, Yusuke Nakanishi, Shunichiro Ito, Iori Kikuchi, Takahiko Endo, Kazuhiro Yanagi, Yugo Oshima, Susumu Okada, Taishi Takenobu, Yasumitsu Miyata
ACS Applied Nano Materials 5 ( 5 ) 6277 - 6284 2022.5
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Nanowire-to-Nanoribbon Conversion in Transition-Metal Chalcogenides: Implications for One-Dimensional Electronics and Optoelectronics
Hong En Lim, Zheng Liu, Juan Kim, Jiang Pu, Hiroshi Shimizu, Takahiko Endo, Yusuke Nakanishi, Taishi Takenobu, Yasumitsu Miyata
ACS Applied Nano Materials 2022.2
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Togo Takahashi, Chisato Ando, Mitsufumi Saito, Yasumitsu Miyata, Yusuke Nakanishi, Jiang Pu, Taishi Takenobu
npj 2D Materials and Applications 5 ( 1 ) 2021.12
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Recent Advances in Light-Emitting Electrochemical Cells with Low-Dimensional Quantum Materials Invited Reviewed
Jiang Pu, Taishi Takenobu
Journal of the Imaging Society of Japan(日本画像学会誌) 60 ( 6 ) 656 - 672 2021.10
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Room-Temperature Chiral Light-Emitting Diode Based on Strained Monolayer Semiconductors
Jiang Pu, Wenjin Zhang, Hirofumi Matsuoka, Yu Kobayashi, Yuhei Takaguchi, Yasumitsu Miyata, Kazunari Matsuda, Yuhei Miyauchi, Taishi Takenobu
ADVANCED MATERIALS 33 ( 36 ) 2021.9
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Spatial Control of Dynamic p–i–n Junctions in Transition Metal Dichalcogenide Light-Emitting Devices
Hao Ou, Hirofumi Matsuoka, Juliette Tempia, Tomoyuki Yamada, Togo Takahashi, Koshi Oi, Yuhei Takaguchi, Takahiko Endo, Yasumitsu Miyata, Chang-Hsiao Chen, Lain-Jong Li, Jiang Pu, Taishi Takenobu
ACS Nano 15 ( 8 ) 12911 - 12921 2021.7
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Electric Double Layer Doping of Charge-Ordered Insulators α-(BEDT-TTF)2I3 and α-(BETS)2I3 Reviewed
Yoshitaka Kawasugi, Hikaru Masuda, Jiang Pu, Taishi Takenobu, Hiroshi M. Yamamoto, Reizo Kato, Naoya Tajima
Crystals 11 ( 7 ) 791 - 791 2021.7
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Air-stable and efficient electron doping of monolayer MoS2 by salt–crown ether treatment Reviewed
Hiroto Ogura, Masahiko Kaneda, Yusuke Nakanishi, Yoshiyuki Nonoguchi, Jiang Pu, Mari Ohfuchi, Toshifumi Irisawa, Hong En Lim, Takahiko Endo, Kazuhiro Yanagi, Taishi Takenobu, Yasumitsu Miyata
Nanoscale 13 ( 19 ) 8784 - 8789 2021.4
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One-dimensionality of thermoelectric properties of semiconducting nanomaterials Reviewed
Yota Ichinose, Manaho Matsubara, Yohei Yomogida, Akari Yoshida, Kan Ueji, Kaito Kanahashi, Jiang Pu, Taishi Takenobu, Takahiro Yamamoto, Kazuhiro Yanagi
Physical Review Materials 5 ( 2 ) 2021.2
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Wafer-Scale Growth of One-Dimensional Transition-Metal Telluride Nanowires Reviewed
Hong En Lim, Yusuke Nakanishi, Zheng Liu, Jiang Pu, Mina Maruyama, Takahiko Endo, Chisato Ando, Hiroshi Shimizu, Kazuhiro Yanagi, Susumu Okada, Taishi Takenobu, Yasumitsu Miyata
Nano Letters 21 ( 1 ) 243 - 249 2021.1
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A versatile structure of light-emitting electrochemical cells for printed electronics Reviewed
Yuki Tanaka, Jiang Pu, Taishi Takenobu
Applied Physics Express 13 ( 8 ) 084002 - 084002 2020.7
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Recent Progress on Light‐Emitting Electrochemical Cells with Nonpolymeric Materials Invited Reviewed
Keiichiro Matsuki, Jiang Pu, Taishi Takenobu
Advanced Functional Materials 30 ( 33 ) 1908641 - 1908641 2020.5
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CVD growth of large-area InS atomic layers and device applications Reviewed
Chien-Liang Tu, Kuang-I Lin, Jiang Pu, Tsai-Fu Chung, Chien-Nan Hsiao, An-Ci Huang, Jer-Ren Yang, Taishi Takenobu, Chang-Hsiao Chen
Nanoscale 12 ( 17 ) 9366 - 9374 2020
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2D Materials for Large‐Area Flexible Thermoelectric Devices
Kaito Kanahashi, Jiang Pu, Taishi Takenobu
Advanced Energy Materials 10 ( 11 ) 1902842 - 1902842 2019.11
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Non-Fermi-liquid behavior and doping asymmetry in an organic Mott insulator interface
Yoshitaka Kawasugi, Kazuhiro Seki, Jiang Pu, Taishi Takenobu, Seiji Yunoki, Hiroshi M. Yamamoto, Reizo Kato
Physical Review B 100 ( 11 ) 2019.9
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Exciton Polarization and Renormalization Effect for Optical Modulation in Monolayer Semiconductors
Jiang Pu, Keichiro Matsuki, Leiqiang Chu, Yu Kobayashi, Shogo Sasaki, Yasumitsu Miyata, Goki Eda, Taishi Takenobu
ACS NANO 13 ( 8 ) 9218 - 9226 2019.8
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Hiroshi Ito, Yusuke Edagawa, Jiang Pu, Hiroki Akutsu, Masayuki Suda, Hiroshi M. Yamamoto, Yoshitaka Kawasugi, Rie Haruki, Reiji Kumai, Taishi Takenobu
Physica Status Solidi - Rapid Research Letters 13 ( 10 ) 1900162 - 1900175 2019.6
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Two-dimensional ground-state mapping of a Mott-Hubbard system in a flexible field-effect device Reviewed
Hiroshi M. Yamamoto, Yoshitaka Kawasugi, Kazuhiro Seki, Satoshi Tajima, Jiang Pu, Taishi Takenobu, Seiji Yunoki, Hiroshi M. Yamamoto, Reizo Kato
Science Advances 5 ( 5 ) 2019.5
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Synthesis of Large-Area InSe Monolayers by Chemical Vapor Deposition
Chang Han-Ching, Tu Chien-Liang, Lin Kuang-I, Pu Jiang, Takenobu Taishi, Hsiao Chien-Nan, Chen Chang-Hsiao
SMALL 14 ( 39 ) 2018.9
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Monolayer Transition Metal Dichalcogenides as Light Sources
Pu Jiang, Takenobu Taishi
ADVANCED MATERIALS 30 ( 33 ) 2018.8
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Self-Aligned and Scalable Growth of Monolayer WSe2–MoS2 Lateral Heterojunctions Reviewed
Ming-Yang Li, Jiang Pu, Jing-Kai Huang, Yuhei Miyauchi, Kazunari Matsuda, Taishi Takenobu, Lain-Jong Li
Advanced Functional Materials 28 ( 17 ) 1-7 2018.4
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Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant Reviewed
Hirofumi Matsuoka, Kaito Kanahashi, Naoki Tanaka, Yoshiaki Shoji, Lain-Jong Li, Jiang Pu, Hiroshi Ito, Hiromichi Ohta, Takanori Fukushima, Taishi Takenobu
Japanese Journal of Applied Physics 57 ( 2 ) 2018.2
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A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers Reviewed
Jiang Pu, Taiyo Fujimoto, Yuki Ohasi, Shota Kimura, Chang-Hsiao Chen, Lain-Jong Li, Tomo Sakanoue, Taishi Takenobu
ADVANCED MATERIALS 29 ( 24 ) 2017.6
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Simultaneous enhancement of conductivity and Seebeck coefficient in an organic Mott transistor Reviewed
Yoshitaka Kawasugi, Kazuhiro Seki, Yusuke Edagawa, Yoshiaki Sato, Jiang Pu, Taishi Takenobu, Seiji Yunoki, Hiroshi M. Yamamoto, Reizo Kato
APPLIED PHYSICS LETTERS 109 ( 23 ) 233301 2016.12
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Photodetection in p-n junctions formed by electrolyte-gated transistors of two-dimensional crystals Reviewed
Daichi Kozawa, Jiang Pu, Ryo Shimizu, Shota Kimura, Ming-Hui Chiu, Keiichiro Matsuki, Yoshifumi Wada, Tomo Sakanoue, Yoshihiro Iwasa, Lain-Jong Li, Taishi Takenobu
APPLIED PHYSICS LETTERS 109 ( 20 ) 201107 2016.11
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Electron-hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator Reviewed
Yoshitaka Kawasugi, Kazuhiro Seki, Yusuke Edagawa, Yoshiaki Sato, Jiang Pu, Taishi Takenobu, Seiji Yunoki, Hiroshi M. Yamamoto, Reizo Kato
Nature Communications 7 12356 2016.8
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Thermoelectric Detection of Multi-Subband Density of States in Semiconducting and Metallic Single-Walled Carbon Nanotubes Reviewed
Sunao Shimizu, Takahiko Iizuka, Kaito Kanahashi, Jiang Pu, Kazuhiro Yanagi, Taishi Takenobu, Yoshihiro Iwasa
SMALL 12 ( 25 ) 3388 - + 2016.7
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Enhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers Reviewed
Jiang Pu, Kaito Kanahashi, Nguyen Thanh Cuong, Chang-Hsiao Chen, Lain-Jong Li, Susumu Okada, Hiromichi Ohta, Taishi Takenobu
PHYSICAL REVIEW B 94 ( 1 ) 014312 2016.7
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Effects of electrolyte gating on photoluminescence spectra of large-area WSe2 monolayer films Reviewed
Keiichiro Matsuki, Jiang Pu, Daichi Kozawa, Kazunari Matsuda, Lain-Jong Li, Taishi Takenobu
JAPANESE JOURNAL OF APPLIED PHYSICS 55 ( 6 ) 06GB02 2016.6
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Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers Reviewed
Jiang Pu, Kazuma Funahashi, Chang-Hsiao Chen, Ming-Yang Li, Lain-Jong Li, Taishi Takenobu
ADVANCED MATERIALS 28 ( 21 ) 4111 - 4119 2016.6
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20pBE-7 Quantum-confined Stark Effect on MX_2 / Graphite Van der Waals Heterojunction Interface
Ho K., Matsuki K., Kobayashi Y., Sasaki S., Kozawa D., Miyata Y., Takenobu T.
Meeting Abstracts of the Physical Society of Japan 71 1873 - 1873 2016
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Carrier doping into κ-type ET salts using electric double layer IV
Kawasugi Y., Seki K., Edagawa Y., Sato Y., Pu J., Takenobu T., Yunoki S., Yamamoto H. M., Kato R.
Meeting Abstracts of the Physical Society of Japan 71 1712 - 1712 2016
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Seebeck effect in metallic and semiconducting single walled carbon nanotubes
Shimizu Sunao, Iizuka Takahiko, Kanahashi Kaito, Ho Koh, Yanagi Kazuhiro, Takenobu Taishi, Iwasa Yoshihiro
Meeting Abstracts of the Physical Society of Japan 71 2196 - 2196 2016
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Strategy for improved frequency response of electric double-layer capacitors Reviewed
Yoshifumi Wada, Jiang Pu, Taishi Takenobu
APPLIED PHYSICS LETTERS 107 ( 15 ) 153505 2015.10
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Functional nanomaterial devices Reviewed
Jiang Pu, Taishi Takenobu
Organic Electronics Materials and Devices 155 - 193 2015.9
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Large-area WSe2 electric double layer transistors on a plastic substrate Reviewed
Kazuma Funahashi, Jiang Pu, Ming-Yang Li, Lain-Jong Li, Yoshihiro Iwasa, Taishi Takenobu
JAPANESE JOURNAL OF APPLIED PHYSICS 54 ( 6 ) 06FF06 2015.6
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23pAB-1 Electric Double Layer Light-emitting Diodes of Monolayer WSe_2
Ho K., Fujimoto T., Huang Jing-Kai, Li Lain-Jong, Sakanoue T., Takenobu T.
Meeting Abstracts of the Physical Society of Japan 70 1345 - 1345 2015
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16pAF-9 Carrier doping into κ-type ET salts using electric double layer III
Kawasugi Y., Seki Kazuhiro, Edagawa Y., Sato Y., Pu J., Takenobu T., Yamamoto H. M., Kato R.
Meeting Abstracts of the Physical Society of Japan 70 1515 - 1515 2015
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17pAH-8 Electric-field-dependent Electroluminescence of Monolayer WSe_2
Ho K., Chu Leiqiang, Sakanoue T., Eda Goki, Takenobu T.
Meeting Abstracts of the Physical Society of Japan 70 1596 - 1596 2015
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22aAS-2 Carrier doping into K-type ET salts using electric double layer II
Kawasugi Y., Edagawa Y., Sato Y., Pu J., Takenobu T., Yamamoto H. M., Kato R.
Meeting Abstracts of the Physical Society of Japan 70 1833 - 1833 2015
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Hole mobility enhancement and p-doping in monolayer WSe2 by gold decoration Reviewed
Chang-Hsiao Chen, Chun-Lan Wu, Jiang Pu, Ming-Hui Chiu, Pushpendra Kumar, Taishi Takenobu, Lain-Jong Li
2D MATERIALS 1 ( 3 ) 034001 2014.12
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Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors Reviewed
Leiqiang Chu, Hennrik Schmidt, Jiang Pu, Shunfeng Wang, Barbaros Oezyilmaz, Taishi Takenobu, Goki Eda
SCIENTIFIC REPORTS 4 7293 2014.12
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Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection Reviewed
Yung-Huang Chang, Wenjing Zhang, Yihan Zhu, Yu Han, Jiang Pu, Jan-Kai Chang, Wei-Ting Hsu, Jing-Kai Huang, Chang-Lung Hsu, Ming-Hui Chiu, Taishi Takenobu, Henan Li, Chih-I Wu, Wen-Hao Chang, Andrew Thye Shen Wee, Lain-Jong Li
ACS NANO 8 ( 8 ) 8582 - 8590 2014.8
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7pAH-12 Field-effect modulated Seebeck coefficient in transition metal dichalcogenide monolayers
Ho,Kou, Kanahashi,K, Nguyen,Thanh Cuong, Li,Lain-Jong, Okada,S, Ohta,H, Takenobu,T
Meeting abstracts of the Physical Society of Japan 69 ( 2 ) 470 2014.8
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Large-Area Synthesis of Highly Crystalline WSe2 Mono layers and Device Applications Reviewed
Jing-Kai Huang, Jiang Pu, Chang-Lung Hsu, Ming-Hui Chiu, Zhen-Yu Juang, Yung-Huang Chang, Wen-Hao Chang, Yoshihiro Iwasa, Taishi Takenobu, Lain-Jong Li
ACS NANO 8 ( 1 ) 923 - 930 2014.1
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Flexible and stretchable thin-film transistors based on molybdenum disulphide Invited Reviewed
Jiang Pu, Lain-Jong Li, Taishi Takenobu
PHYSICAL CHEMISTRY CHEMICAL PHYSICS 16 ( 29 ) 14996 - 15006 2014
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Novel Functional Devices of Transition Metal Dichalcogenide Monolayers Reviewed
Taishi Takenobu, Jiang Pu, Lain-Jong Li, Yoshihiro Iwasa
2014 21ST INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD) 283 - 286 2014
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Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics Reviewed
Jiang Pu, Yijin Zhang, Yoshifumi Wada, Jacob Tse-Wei Wang, Lain-Jong Li, Yoshihiro Iwasa, Taishi Takenobu
APPLIED PHYSICS LETTERS 103 ( 2 ) 023505 2013.7
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Ambipolar Organic Single-Crystal Transistors Based on Ion Gels Reviewed
Yohei Yomogida, Jiang Pu, Hidekazu Shimotani, Shimpei Ono, Shu Hotta, Yoshihiro Iwasa, Taishi Takenobu
ADVANCED MATERIALS 24 ( 32 ) 4392 - 4397 2012.8
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Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics Reviewed
Jiang Pu, Yohei Yomogida, Keng-Ku Liu, Lain-Jong Li, Yoshihiro Iwasa, Taishi Takenobu
NANO LETTERS 12 ( 8 ) 4013 - 4017 2012.8
Books
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カーボンナノチューブ・グラフェンの応用研究最前線
蒲江, 竹延大志（ Role： Joint authorフレキシブルトランジスタ開発）
エヌ・ティー・エス 2016.9 （ ISBN:9784860434564 ）
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カルコゲナイド系層状物質の最新研究
蒲江, 竹延大志（ Role： Joint authorカルコゲナイド系層状物質を用いた電気二重層トランジスタ）
シーエムシー出版 2016.7 （ ISBN:9784781311661 ）
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Organic Electronics Materials and Devices
Jiang Pu, Taishi Takenobu（ Role： Joint authorFunctional Nanomaterials Devices）
Springer 2015 （ ISBN:9784431556541 ）
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Molybdenum Disulfide Enables Flexible Transistors
Jiang Pu, Taishi Takenobu, Lain-Jong Li（Molybdenum Disulfide Enables Flexible Transistors）
American Chemical Society 2012
MISC
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Self-oscillation observed in the molecular memristor (Et-4BrT)[Ni(dmit)2]2
大島勇吾, 竹延大志, PU J., 石黒圭祐, 加藤礼三, 山本浩史, 草本哲郎
日本物理学会講演概要集(CD-ROM) 79 ( 2 ) 2024
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Self-oscillation observed in the molecular memristor (Et-4BrT)[Ni(dmit)2]2
大島勇吾, 竹延大志, PU Jiang, 石黒圭祐, 加藤礼三, 山本浩史, 草本哲郎
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 84th 2023
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Physical properties of the molecular memristor candidate (Et-4BrT)[Ni(dmit)2]2
大島勇吾, 竹延大志, PU Jiang, 石黒圭祐, 加藤礼三, 山本浩史, 草本哲郎
応用物理学会春季学術講演会講演予稿集(CD-ROM) 70th 2023
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Gas-source chemical vapor deposition growth of 1T′-phase WS2 atomic layers
岡田光博, LIN Yung-Chang, 菊地伊織, 岡田直也, CHANG Wen Hsin, 清水哲夫, 久保利隆, PU Jiang, 竹延大志, 山田貴壽, 入沢寿史
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 82nd 2021
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2D Materials for Large-Area Flexible Thermoelectric Devices
Kaito Kanahashi, Jiang Pu, Taishi Takenobu
ADVANCED ENERGY MATERIALS 10 ( 11 ) 2020.3
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Self-Aligned and Scalable Growth of Monolayer WSe2–MoS2 Lateral Heterojunctions Reviewed
Ming-Yang Li, Jiang Pu, Jing-Kai Huang, Yuhei Miyauchi, Kazunari Matsuda, Taishi Takenobu, Lain-Jong Li
Advanced Functional Materials 28 ( 17 ) 1-7 2018.4
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Chemical hole doping into large-area transition metal dichalcogenide monolayers using boron-based oxidant Reviewed
Hirofumi Matsuoka, Kaito Kanahashi, Naoki Tanaka, Yoshiaki Shoji, Lain-Jong Li, Jiang Pu, Hiroshi Ito, Hiromichi Ohta, Takanori Fukushima, Taishi Takenobu
Japanese Journal of Applied Physics 57 ( 2 ) 2018.2
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分子性物質・原子層物質のための高感度ESR測定装置の開発
大島勇吾, 木村尚次郎, 加藤礼三, PU J., 竹延大志
日本物理学会講演概要集(CD-ROM) 73 ( 2 ) 2018
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A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers Reviewed
Jiang Pu, Taiyo Fujimoto, Yuki Ohasi, Shota Kimura, Chang-Hsiao Chen, Lain-Jong Li, Tomo Sakanoue, Taishi Takenobu
ADVANCED MATERIALS 29 ( 24 ) 2017.6
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Simultaneous enhancement of conductivity and Seebeck coefficient in an organic Mott transistor Reviewed
Yoshitaka Kawasugi, Kazuhiro Seki, Yusuke Edagawa, Yoshiaki Sato, Jiang Pu, Taishi Takenobu, Seiji Yunoki, Hiroshi M. Yamamoto, Reizo Kato
APPLIED PHYSICS LETTERS 109 ( 23 ) 233301 2016.12
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Photodetection in p-n junctions formed by electrolyte-gated transistors of two-dimensional crystals Reviewed
Daichi Kozawa, Jiang Pu, Ryo Shimizu, Shota Kimura, Ming-Hui Chiu, Keiichiro Matsuki, Yoshifumi Wada, Tomo Sakanoue, Yoshihiro Iwasa, Lain-Jong Li, Taishi Takenobu
APPLIED PHYSICS LETTERS 109 ( 20 ) 201107 2016.11
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Electron-hole doping asymmetry of Fermi surface reconstructed in a simple Mott insulator Reviewed
Yoshitaka Kawasugi, Kazuhiro Seki, Yusuke Edagawa, Yoshiaki Sato, Jiang Pu, Taishi Takenobu, Seiji Yunoki, Hiroshi M. Yamamoto, Reizo Kato
Nature Communications 7 12356 2016.8
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Enhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers Reviewed
Jiang Pu, Kaito Kanahashi, Nguyen Thanh Cuong, Chang-Hsiao Chen, Lain-Jong Li, Susumu Okada, Hiromichi Ohta, Taishi Takenobu
PHYSICAL REVIEW B 94 ( 1 ) 014312 2016.7
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Thermoelectric Detection of Multi-Subband Density of States in Semiconducting and Metallic Single-Walled Carbon Nanotubes Reviewed
Sunao Shimizu, Takahiko Iizuka, Kaito Kanahashi, Jiang Pu, Kazuhiro Yanagi, Taishi Takenobu, Yoshihiro Iwasa
SMALL 12 ( 25 ) 3388 - + 2016.7
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Highly Flexible and High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers Reviewed
Jiang Pu, Kazuma Funahashi, Chang-Hsiao Chen, Ming-Yang Li, Lain-Jong Li, Taishi Takenobu
ADVANCED MATERIALS 28 ( 21 ) 4111 - 4119 2016.6
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Effects of electrolyte gating on photoluminescence spectra of large-area WSe2 monolayer films Reviewed
Keiichiro Matsuki, Jiang Pu, Daichi Kozawa, Kazunari Matsuda, Lain-Jong Li, Taishi Takenobu
JAPANESE JOURNAL OF APPLIED PHYSICS 55 ( 6 ) 06GB02 2016.6
-
Strategy for improved frequency response of electric double-layer capacitors Reviewed
Yoshifumi Wada, Jiang Pu, Taishi Takenobu
APPLIED PHYSICS LETTERS 107 ( 15 ) 153505 2015.10
-
Large-area WSe2 electric double layer transistors on a plastic substrate Reviewed
Kazuma Funahashi, Jiang Pu, Ming-Yang Li, Lain-Jong Li, Yoshihiro Iwasa, Taishi Takenobu
JAPANESE JOURNAL OF APPLIED PHYSICS 54 ( 6 ) 06FF06 2015.6
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大面積WSe2単層膜の電場・電荷変調発光分光
松木啓一郎, PU Jiang, 小澤大知, 小澤大知, 松田一成, LI Lain-Jong, 竹延大志, 竹延大志
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 76th 2015
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Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors Reviewed
Leiqiang Chu, Hennrik Schmidt, Jiang Pu, Shunfeng Wang, Barbaros Oezyilmaz, Taishi Takenobu, Goki Eda
SCIENTIFIC REPORTS 4 7293 2014.12
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Hole mobility enhancement and p-doping in monolayer WSe2 by gold decoration Reviewed
Chang-Hsiao Chen, Chun-Lan Wu, Jiang Pu, Ming-Hui Chiu, Pushpendra Kumar, Taishi Takenobu, Lain-Jong Li
2D MATERIALS 1 ( 3 ) 034001 2014.12
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10aBH-11 Field effect control of thermopower in carbon nanotube by electric double layer gating
Iizuka Takahiko, Shimizu Sunao, Ho Koh, Hamahata Hiroki, Yanagi Kazuhiro, Takenobu Taishi, Iwasa Yoshihiro
Meeting abstracts of the Physical Society of Japan 69 ( 2 ) 455 - 455 2014.8
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7pAH-11 Large-area pn junction diodes based on WSe_2 monolayers
Wada Y., Pu J., Shimizu R., Chen C.-H., Li L.-J., Iwasa Y., Takenobu T.
Meeting abstracts of the Physical Society of Japan 69 ( 2 ) 470 - 470 2014.8
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Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection Reviewed
Yung-Huang Chang, Wenjing Zhang, Yihan Zhu, Yu Han, Jiang Pu, Jan-Kai Chang, Wei-Ting Hsu, Jing-Kai Huang, Chang-Lung Hsu, Ming-Hui Chiu, Taishi Takenobu, Henan Li, Chih-I Wu, Wen-Hao Chang, Andrew Thye Shen Wee, Lain-Jong Li
ACS NANO 8 ( 8 ) 8582 - 8590 2014.8
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Large-Area Synthesis of Highly Crystalline WSe2 Mono layers and Device Applications Reviewed
Jing-Kai Huang, Jiang Pu, Chang-Lung Hsu, Ming-Hui Chiu, Zhen-Yu Juang, Yung-Huang Chang, Wen-Hao Chang, Yoshihiro Iwasa, Taishi Takenobu, Lain-Jong Li
ACS NANO 8 ( 1 ) 923 - 930 2014.1
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Flexible and stretchable thin-film transistors based on molybdenum disulphide Invited Reviewed
Jiang Pu, Lain-Jong Li, Taishi Takenobu
PHYSICAL CHEMISTRY CHEMICAL PHYSICS 16 ( 29 ) 14996 - 15006 2014
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Electric Double Layer Transistors of Monolayer WSe_2 atomic film
Ho Kou, Huang Jing-Kai, Shimizu R., Funahashi K., Li Lain-Jong, Iwasa Y., Takenobu T.
Meeting abstracts of the Physical Society of Japan 68 ( 2 ) 745 - 745 2013.8
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Electric Double Layer Transistors of Monolayer WSe_2 atomic films
Kou Ho, Huang Jing-Kai, Shimizu R., Funahashi K., Li Lain-Jong, Iwasa Y., Takenobu T.
Meeting abstracts of the Physical Society of Japan 68 ( 2 ) 473 - 473 2013.8
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Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics Reviewed
Jiang Pu, Yijin Zhang, Yoshifumi Wada, Jacob Tse-Wei Wang, Lain-Jong Li, Yoshihiro Iwasa, Taishi Takenobu
APPLIED PHYSICS LETTERS 103 ( 2 ) 023505 2013.7
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26pXZE-2 Frequency dependence of ionic liquid in electric double layer transistors
Wada Yoshifumi, Pu Jiang, Takagi Yuki, Yanagi Kazuhiro, Takenobu Taishi
Meeting abstracts of the Physical Society of Japan 68 ( 1 ) 917 - 917 2013.3
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26pXZE-2 Frequency dependence of ionic liquid in electric double layer transistors
Wada Yoshifumi, Pu Jiang, Takagi Yuki, Yanagi Kazuhiro, Takenobu Taishi
Meeting abstracts of the Physical Society of Japan 68 ( 1 ) 593 - 593 2013.3
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26pXZE-3 Stretchable MoS_2 Thin-film Transistors Using Ion-Gel Gate Dielectrics
Ho Kou, Zhang Y., Wada Y., Wang Jacob Tse-Wei, Li Lain-Jong, Iwasa Y., Takenobu T.
Meeting abstracts of the Physical Society of Japan 68 ( 1 ) 593 - 593 2013.3
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26pXZE-3 Stretchable MoS_2 Thin-film Transistors Using Ion-Gel Gate Dielectrics
Ho Kou, Zhang Y., Wada Y., Wang Jacob Tse-Wei, Li Lain Jong, Iwasa Y., Takenobu T.
Meeting abstracts of the Physical Society of Japan 68 ( 1 ) 917 - 917 2013.3
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19aFH-3 Highly Flexible MoS_2 Thin-Film Transistors with Ion Gel Dielectrics
Ho Kou, Yomogida Y., Liu Keng-Ku, Li Lain-Jong, Iwasa Y., Takenobu T.
Meeting abstracts of the Physical Society of Japan 67 ( 2 ) 771 - 771 2012.8
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Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics Reviewed
Jiang Pu, Yohei Yomogida, Keng-Ku Liu, Lain-Jong Li, Yoshihiro Iwasa, Taishi Takenobu
NANO LETTERS 12 ( 8 ) 4013 - 4017 2012.8
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Ambipolar Organic Single-Crystal Transistors Based on Ion Gels Reviewed
Yohei Yomogida, Jiang Pu, Hidekazu Shimotani, Shimpei Ono, Shu Hotta, Yoshihiro Iwasa, Taishi Takenobu
ADVANCED MATERIALS 24 ( 32 ) 4392 - 4397 2012.8
Presentations
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Direct Electroluminescence Imaging of Transition Metal Dichalcogenides
2018.9 The SSDM2018 Organizing Committee
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電気二重層ドーピングとひずみ制御によるκ型ET塩の超伝導相の探索II International conference
川椙義高, 関和弘, 蒲江, 竹延大志, 柚木清司, 山本浩史, 加藤礼三
日本物理学会 2018.3 日本物理学会
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フレキシブルMoS2薄膜トランジスタ International conference
蒲江, 蓬田陽平, K.-K. Liu, L.-J. Li, 岩佐義宏, 竹延大志
第74回応用物理学会秋季学術講演会 2012.9
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Ambipolar organic single-crystal transistors based on ion gels
J. Pu, Y. Yomogida, H. Shimotani, S. Ono, S. Hotta, Y. Iwasa, T. Takenobu
ICFPE2012 2012.9
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Monolayer WSe2-MoS2 Lateral Heterojunction Light-Emitting Diodes
Jiang Pu, Ming-Yang Li, Jing-Kai Huang, Yuhei Miyauchi, Kazunari Matsuda, Lain-Jong Li, Taishi Takenobu
The 54th Fullerenes-Nanotubes-Graphene General Symposium 2018.3 The Fullerenes, Nanotubes and Graphene Research Society
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MoS2電気二重層トランジスタにおける一軸性歪みの影響 International conference
蒲江, 張奕勁, 和田義史, J. Wang, L.-J. Li, 岩佐義宏, 竹延大志
日本物理学会 第68回年次大会 2013.3
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イオンゲルを用いたMoS2薄膜トランジスタ International conference
蒲江, 蓬田陽平, K.-K. Liu, L.-J. Li, 岩佐義宏, 竹延大志
日本物理学会 2012年秋季大会 2012.9
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Electric Double Layer Transistors of Transition Metal Dichalcogenides
J. Pu, K. Funahashi, C.-H. Chen, Y. Iwasa, L.-J. Li, T. Takenobu
RPGR2014 2014.9
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単層遷移金属ダイカルコゲナイドにおける熱電効果の電場変調 International conference
蒲江, 金橋魁利, N. T. Cuong, L.-J. Li, 岡田晋, 太田裕道, 竹延大志
日本物理学会2014年秋季大会 2014.9
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単層WSe2を用いた電気二重層発光ダイオード International conference
蒲江, 藤本太陽, J.-K. Huang, L.-J. Li, 坂上知, 竹延大志
日本物理学会 第70回年次大会 2015.3
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Electric Double Layer Light-emitting Diodes of Monolayer WSe2 International conference
J. Pu, T. Fujimoto, J.-K. Huang, L.-J. Li, T. Sakanoue, T. Takenobu
The 48th FNTG Symposium 2015.2
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High gain CMOS inverters based on transition metal dichalcogenides International conference
J. Pu, J.-K. Huang, Y. Iwasa, L.-J. Li, T. Takenobu
The 46th FNTG Symposium 2014.2
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遷移金属ダイカルコゲナイドを用いた電気二重層トランジスタ International conference
蒲江, J.-K. Huang, 清水諒, 舟橋一真, L.-J. Li, 岩佐義宏, 竹延大志
第74回応用物理学会秋季学術講演会 2013.9
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Flexible and stretchable thin-film transistors of transition metal dichalcogenides Invited International conference
Innovation in R&D of the Flexible Electronics -Toward the Inorganic Flexible Devices- 2014.9 The Japan Society of Applied Physics
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大面積単層WSe2薄膜を用いたPNフォトダイオード International conference
蒲江, 清水諒, C.-H. Chen, 岩佐義宏, L.-J. Li, 竹延大志
第61回応用物理学会春季学術講演会 2014.3
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単層WSe2薄膜を用いた電気二重層トランジスタ International conference
蒲江, J.-K. Huang, 清水諒, 舟橋一真, L.-J. Li, 岩佐義宏, 竹延大志
日本物理学会 2013年秋季大会 2013.9
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Flexible, stretchable MoS2 thin-film transistors with ion-gel gate dielectrics
J. Pu, Y. Yomogida, K.-K. Liu, L.-J. Li, Y. Iwasa, T. Takenobu
APPC12 2013.7
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イオンゲルを用いた単結晶両極性電気二重層トランジスタ International conference
蒲江, 蓬田陽平, 下谷秀和, 山雄健史, 堀田収, 岩佐義宏, 竹延大志
日本物理学会 第67回年次大会 2012.3
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多結晶遷移金属ダイカルコゲナイド単層膜の電流励起発光イメージング International conference
松岡拓史, 蒲江, Lain-Jong Li, 坂上知, 竹延大志
応用物理学会 2018.3 応用物理学会
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Electric Double Layer Light Emitting Diode of WSe2/MoSe2 in-plane heterostructures
Yuhei Takaguchi, Jiang Pu, Yu Kobayashi, Taishi Takenobu, Yutaka Maniwa, Yasumitsu Miyata
The 53rd Fullerenes-Nanotubes-Graphene General Symposium 2017.9 The Fullerenes, Nanotubes and Graphene Research Society
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WSe2/MoSe2面内ヘテロ構造を利用した電気二重層発光ダイオード International conference
高口裕平, 蒲江, 小林佑, 竹延大志, 真庭豊, 宮田耕充
応用物理学会 2017.9 応用物理学会
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電気二重層ドーピングとひずみ制御によるκ型ET塩の超伝導相の探索 International conference
川椙義高, 関和弘, 蒲江, 竹延大志, 柚木清司, 山本浩史, 加藤礼三
物理学会 2017.9 日本物理学会
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Electroluminescence Imaging of Large-Area Transition Metal Dichalcogenide Light-emitting Diodes
Hirofumi Matsuoka, Lain-Jong Li, Jiang Pu, Taishi Takenobu
The 53rd Fullerenes-Nanotubes-Graphene General Symposium 2017.9 The Fullerenes, Nanotubes and Graphene Research Society
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Transport properties of CVD-grown monolayer MoS2 crystals
Tomomi Uchida, Yu Kobayashi, Jiang Pu, Taishi Takenobu, Takahiko Endo, Yutaka Maniwa, Yasumitsu Miyata
The 53rd Fullerenes-Nanotubes-Graphene General Symposium 2017.9 The Fullerenes, Nanotubes and Graphene Research Society
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大面積MoS2単層膜における電界誘起金属-絶縁体転移 International conference
蒲江, 山田知之, Lain-Jong Li, 松田達磨, 蓬田陽平, 柳和宏, 伊東 裕, 竹延 大志
応用物理学会 2017.9
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多結晶MoS2単層膜における電界誘起金属-絶縁体転移
蒲江, 枝川祐介, 三田村昌哉, 河合英輝, Lain-Jong Li, 蓬田 陽平, 柳 和宏, 伊東 裕, 竹延 大志
日本物理学会 2017.3
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電解質を用いた単層遷移金属ダイカルコゲナイド発光素子 International conference
蒲江, Wenjin Zhang, 松岡拓史, 小林佑, 高口裕平, 宮田 耕充, Lain-Jong Li, 松田一成, 宮内雄平, 竹延大志
日本物理学会 2017.9
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Direct Electroluminescence Imaging of Transition Metal Dichalcogenides International conference
Jiang Pu, Wenjin Zhang, Hirofumi Matsuoka, Yu Kobayashi, Yuhei Takaguchi, Yasumitsu Miyata, Lain-Jong Li, Kazunari Matsuda, Yuhei Miyauchi, Taishi Takenobu
The 53th FNTG Symposium 2017.9
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Highly Flexible and Extremely High-gain Complementary Inverters of Transition Metal Dichalcogenide Monolayers
J. Pu, K. Funahashi, C.-H. Chen, M.-Y. Li, L.-J. Li, T. Takenobu
ITC2016 2016.3
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MX2 / Graphiteファンデルワールスヘテロ接合界面におけるシュタルク効果 International conference
蒲江, 松木 啓一郎, 小林佑, 佐々木将吾, 小澤大知, 宮田耕充, 竹延大志
日本物理学会 第71回年次大会 2016.3
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High-Performance Complementary Inverters of Large-Area Transition Metal Dichalcogenide Monolayers International conference
Jiang Pu, Kazuma Funahashi, Chang-Hsiao Chen, Ming-Yang Li, Lain-Jong Li, Taishi Takenobu
The 50th FNTG Symposium 2016.3
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単層WSe2における電流励起発光の電場依存性 International conference
蒲江, L. Chu, 坂上知, G. Eda, 竹延大志
日本物理学会 2015年秋季大会 2015.9
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Electric double layer light-emitting diodes of transition metal dichalcogenide monolayers Invited
Energy Material Nanotechnology (EMN) 2015.9 Energy Material Nanotechnology (EMN)
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Exploring electronic functionalities of transition metal dichalcogenides Invited International conference
The young researcher workshop of the 49th FNTG Symposium 2015.9 The 49th FNTG Symposium
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Carrier-density- and Electric-field-dependent Electroluminescence of Monolayer WSe2 International conference
The 49th FNTG Symposium 2015.9
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Novel Functionalities in Electric Double Layer Transistors of CVD-grown Transition Metal Dichalcogenide Monolayers
J. Pu, L.-J. Li, T. Sakanoue, T. Takenobu
IWEPNM2015 2015.3
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Flexible and Stretchable Thin-film Transistors and Inverters Based on Transition Metal Dichalcogenides International conference
Jiang Pu, Kazuma Funahashi, Lain-Jong Li, Taishi Takenobu
EMS34 2015.7
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Electric Double Layer Light-emitting Diodes of Monolayer WSe2
J. Pu, T. Fujimoto, J.-K. Huang, L.-J. Li, G. Eda, T. Sakanoue, T. Takenobu
NT15 2015.7
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Flexible, stretchable MoS2 thin-film transistors with ion-gel gate dielectrics
J. Pu, Y. Yomogida, K.-K. Liu, L.-J. Li, Y. Iwasa, T. Takenobu
Flexible Electronics 2013.6
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有機モット絶縁体κ-(BEDT-TTF)2Cu[N(CN)2]Clにおける非フェルミ液体的挙動とそのドーピング非対称性 International conference
川椙義高, 関和弘, 蒲江, 竹延大志, 柚木清司, 山本浩史, 加藤礼三
日本物理学会 2019.3
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電解質を用いた原子層発光素子の発光特性 International conference
蒲 江, 松岡 拓史, Juliette Tempia, 小林 佑, 宮田 耕充, Chang-Hsiao Chen, Lain-Jong Li, 竹延 大志
日本物理学会 2019.3
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Electric-field-induced Metal-Insulator Transition and Quantum Transport in Large-Area Polycrystalline MoS2 Monolayers
2nd International Workshop on 2D Materials 2019.2
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Room-Temperature Valley-Polarized Light-Emitting Devices via strained monolayer semiconductors
2nd International Workshop on 2D Materials 2019.2
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Interface electroluminescence from in-plane heterostructures based transition metal dichalcogenide monolayers
2019.3
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Exciton polarizability and renormalization effects for optical modulation in monolayer semiconductors
2019.3
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Direct Electroluminescence Imaging of Polycrystalline Monolayer Transition Metal Dichalcogenide Light-emitting Devices
MNC2018 2018.11
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Room temperature valley polarized light-emitting diodes of monolayer transition metal dichalcogenides
MNC2018 2018.11
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Electronic and Thermoelectric Devices of CVD-grown Two-Dimensional Transition Metal Dichalcogenides International conference
Workshop on Thermal and Charge Transport across Flexible Nano-Interfaces 2018.11
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Universality in Transition Metal Dichalcogenide Light-Emitting Devices
2018.9
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Electric Double Layer Transistors of CVD-grown monolayer InS and InSe
2018.9
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Room Temperature Valley Polarized Light-Emitting Diodes of Monolayer Transition Metal Dichalcogenides
RPGR2018 2018.10
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Electric double layer light emitting diode of WS2/MoS2 in-plane heterostructures
2018.9
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単層MoS2/WSe2面内ヘテロ接合発光ダイオード International conference
蒲江, Ming-Yang Li, Jing-Kai Huang, 宮内雄平, 松田一成, Lain-Jong Li, 竹延大志
日本物理学会 2018.3 日本物理学会
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Fabrication of Stretchable MoS2 Thin-film Transistors Using Elastic Ion-Gel Gate Dielectrics
J. Pu, Y. Zhang, Y. Wada, J. T.-W. Wang, L.-J. Li, Y. Iwasa, T. Takenobu
NT13 2013.6
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Electric-field-induced Metal-Insulator Transition and Quantum Transport in Large-Area Polycrystalline MoS2 Monolayers
Tomoyuki Yamada, Jiang Pu, Lain-Jong Li, Taishi Takenobu
The 54th Fullerenes-Nanotubes-Graphene General Symposium 2018.3 The Fullerenes, Nanotubes and Graphene Research Society
Awards
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MNC 2020 Award for Most Impressive Presentation
2021.10 International Microprocesses and Nanotechnology Conference
Yota Ichinose, Manaho Matsubara, Yohei Yomogida, Akari Yoshida, Kan Ueji, Kaito Kanahashi, Jiang Pu, Taishi Takenobu, Takahiro Yamamoto, and Kazuhiro Yanagi
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SSDM Young Researcher Award
2019.9 International Conference on Solid State Devices and Materials (SSDM)
Jiang Pu
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第14回飯島奨励賞
2017.9 フラーレン・ナノチューブ・グラフェン学会 Direct Electroluminescence Imaging of Transition Metal Dichalcogenides
Jiang Pu
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Poster Paper Award
2016.3 International Thin-Film Transistor Conference (ITC2016) Highly Flexible and Extremely High-gain Complementary Inverters of Transition Metal Dichalcogenide Monolayers
Jiang Pu
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若手奨励賞
2015.9 フラーレン・ナノチューブ・グラフェン学会 Electric Double Layer Light-emitting Diodes of Monolayer WSe2
Jiang Pu
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Journal of Materials Chemistry A賞
2015.9 フラーレン・ナノチューブ・グラフェン学会 Electric Double Layer Light-emitting Diodes of Monolayer WSe2
Jiang Pu
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Poster Presentation Award
2015.6 The Sixteenth International Conference on the Science and Application of Nanotubes (NT15) Electric Double Layer Light-emitting Diodes of Monolayer WSe2
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講演奨励賞
2014.9 応用物理学会 遷移金属ダイカルコゲナイドを用いた電気二重層トランジスタ
蒲江
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修士論文賞（宮部賞）
2014.3 早稲田大学 物理学及応用物理学専攻 二次元材料を用いた電気二重層トランジスタ
蒲江
Research Projects
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歪みによる原子層モアレ構造の制御とモアレ光機能デバイスの創製
Grant number：22H01899 2022.4 - 2026.3
日本学術振興会 科学研究費助成事業 基盤研究(B) 基盤研究(B)
蒲 江
Grant amount：\17420000 （ Direct Cost: \13400000 、 Indirect Cost：\4020000 ）
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歪んだ原子層物質における室温純粋円偏光発光と電気的円偏光制御の実現
Grant number：22H00280 2022.4 - 2026.3
日本学術振興会 科学研究費助成事業 基盤研究(A) 基盤研究(A)
竹延 大志, 蒲 江, 宮田 耕充
Grant amount：\42510000 （ Direct Cost: \32700000 、 Indirect Cost：\9810000 ）
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歪みによる原子層モアレ構造の制御とモアレ光機能デバイスの創製
Grant number：23K23167 2022.4 - 2026.3
日本学術振興会 科学研究費助成事業 基盤研究(B)
蒲 江
Grant amount：\17420000 （ Direct Cost: \13400000 、 Indirect Cost：\4020000 ）
本研究の目標は、原子層ヘテロ構造に生じるモアレパターンを歪みにより連続制御する技術を構築することで、新しい発光・受光機能を有するデバイスの実現を目指す。具体的には、柔軟な基板上に遷移金属ダイカルコゲナイド(TMDC)による回転積層ヘテロ構造を作製し、機械的変形を行うことで任意のモアレ構造制御を行う。これにより、モアレポテンシャルに閉じ込められた励起子の次元性を連続的に変調可能となり、モアレ励起子の量子状態及び偏光自由度を機能化した発光・受光デバイスの作製を目的とする。
この目的に対し本年度は、(1)歪み効果とモアレパターン変調の相関解明、(2)歪み効果による電子構造変調の評価、(3)歪みを導入した発光デバイス作製を行った。以下、項目ごとに示す。
(1)歪み効果とモアレパターン変調の相関解明 : TMDCヘテロ構造に任意の歪みを印加した時のモアレパターン変調を、ピエゾAFM観測、顕微分光測定(ラマン、第二次高調波)、及びシミュレーションにより評価した。その結果、印加する歪み方位・強度とモアレ構造変化の相関を解明し、長方形のモアレパターンや一次元的なモアレパターンなど、既存手法では達成困難な超格子構造の作製に成功した。
(2)歪み効果による電子構造変調の評価 : 理論計算により、歪みによりモアレパターンが変化した時の、モアレバンドの変調を評価した。その結果、歪みによるモアレバンド変化として、vHS特異点やフラットバンドの発現を示唆する結果が得られた。また、角度分解光電子分光を用いて、歪み効果とバンド構造変化を直接評価する準備も行った。
(3)歪みを導入した発光デバイス作製 : 上述の歪み印加したヘテロ・モアレ構造に対し、電解質を用いた発光デバイスの作製を行った。その結果、歪み効果を受けた電流励起発光特性の観測に成功し、今後、モアレ構造制御を活かした量子発光機能・デバイスの創製が期待できる。 -
Development of Novel Physical Properties with 2.5 Dimensional Structures
Grant number：21H05236 2021.9 - 2026.3
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Transformative Research Areas (A) Grant-in-Aid for Transformative Research Areas (A)
Grant amount：\154310000 （ Direct Cost: \118700000 、 Indirect Cost：\35610000 ）
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ナノ構造体の局所力学場制御によるバレートロニクスデバイスの創製
Grant number：20H05189 2020.4 - 2022.3
日本学術振興会 科学研究費助成事業 新学術領域研究(研究領域提案型) 新学術領域研究(研究領域提案型)
蒲 江
Grant amount：\5980000 （ Direct Cost: \4600000 、 Indirect Cost：\1380000 ）
本研究の目標は、原子層物質において力学特性がもたらす局所電子構造変化を解明・制御することで、新しい光・電子機能（オプト・バレートロニクス）デバイスの実現を目指す。具体的には、空間反転対称性が破れた原子層物質、遷移金属ダイカルコゲナイド（TMDC）が有する、波数空間における磁気的に非等価なバレーを力学的に制御する手法を確立し、これにより生じるバレー流を新たな自由度とするデバイスの作製を目的とする。
本研究目的に対し、本年度は（I）ヘテロ界面歪みによる室温円偏光発光の生成・制御と、（II）歪みを利用した高偏極率な円偏光発光素子の設計、の2項目について取り組んだ。以下にそれぞれの項目に関して研究実績の概要を示す。
（I）原子層ヘテロ接合を用いた室温円偏光発光素子
まず化学成長したTMDC面内ヘテロ単層膜を用いて電解質発光素子を作製し、ヘテロ界面からの電流励起発光を直接観測した。次に、界面発光の円偏光分解を測定したところ、室温において10%以上の高い円偏光分極が観測された。最後、ヘテロ界面の原子配列を電子顕微鏡で評価した結果、界面歪みが室温円偏光生成の起源であることを明らかにした。原子層ヘテロ構造は、化学合成による多様な材料展開や、大面積化・パターニング技術も適用でき、材料設計による高効率な円偏光発光素子が期待できる。
（II）歪みによる高偏極率な室温円偏光発光素子の設計
上記の結果及び昨年度の成果により、TMDCの力学制御が円偏光発光の生成・制御に極めて有用な手法であることが示された。最後、100%室温円偏光発光を実現するための最適な歪み効果（強度・方位）及び電場等のデバイスパラメータを、理論計算によりシミュレーションを行った。その結果、現状のデバイス設計において歪みを増大することで、今後100%室温円偏光発光素子の作製が実験的に達成可能であることが明らかとなった。 -
Room-temperature chiral light sources and lasers of atomically thin transition metal dichalcogenides
Grant number：19K15383 2019.4 - 2022.3
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Early-Career Scientists Grant-in-Aid for Early-Career Scientists
Pu Jiang
Authorship：Principal investigator Grant type：Competitive
Grant amount：\4160000 （ Direct Cost: \3200000 、 Indirect Cost：\960000 ）
The purpose of this research is to establish the control method of chiral light at room temperature by ustilizing the unique electronic structures of atomically thin transition metal dichalcogenides (TMDCs), which cloud finnaly yield roome-temperature chiral light sources and lasers. To achieve this goal, first, we focused on the strain-inuduced crystal symmetry breaking, which results in the electrical generation and control chiral EL. Next, we realized room-temperature chiral light-emitting devices using in-plane heterostrcutures. Third, by introducing various cavities, we achieved functional TMDC light-emitting devices that can generate cavity EL and exciton-polariton light emission.
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High-performance and functional optoelectronic devices of atomically thin transition metal dichalcogenides
Grant number：17H06736 2017.8 - 2019.3
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Research Activity Start-up Grant-in-Aid for Research Activity Start-up
PU JIANG
Authorship：Principal investigator Grant type：Competitive
Grant amount：\2990000 （ Direct Cost: \2300000 、 Indirect Cost：\690000 ）
The purpose of this proposal was to realize high-performance and functional light-emitting devices of atomically thin transition metal dichalcogenides (TMDCs) with electrolyte-based device structures. To achieve this goal, first, we fabricated light-emitting devices with various TMDCs and their heterostructures. We evaluated fundamental optical properties with wide-range (VIS-NIR) light emission spectra in these devices. Second, we established solution-based transferred methods and build the devices on the plastic substrates, resulting in highly flexible TMDC light-emitting devices. Finally, we also tried to embed the cavity structure inside light-emitting devices to enhance their efficiency. Furthermore, we found out a unique origin to realize circularly polarized light-emitting devices in TMDCs, which will open new pathways for exploring new functional optoelectronic devices based on atomically thin TMDCs.
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Physical property control of pi-figuration system
Grant number：26102012 2014.7 - 2019.3
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area) Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)
Takenobu Taishi, ITO Hiroshi, TANAKA Hisaaki, PU Jiang
Grant amount：\54860000 （ Direct Cost: \42200000 、 Indirect Cost：\12660000 ）
This project clarified the physical properties of π figuration system, which is aggregation of π figuration molecules, and tried to investigate new physical phenomenon and new functional devices. We investigated many molecules and succeeded in (i) the development of new chemical doping method, (ii) the fabrication of highly functionalized electric double layer transistors, (iii) the fabrication of highly functionalized light-emitting electrochemical cells, (iv) the fabrication of mechanical flexible devices, and (v) strain induced phase transition.
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二次元材料によるプリンテッド・アンビエントエレクトロニクスの実現
Grant number：14J07485 2014.4 - 2017.3
日本学術振興会 科学研究費助成事業 特別研究員奨励費 特別研究員奨励費
蒲 江
Authorship：Principal investigator Grant type：Competitive
Grant amount：\3200000 （ Direct Cost: \3200000 ）
本研究の目的は印刷による二次元材料を用いた柔軟な論理回路の実現であり、材料及びデバイス両面を相補的に理解することによって、最終的には世界初の印刷型アンビエントエレクトロニクスを実現する。これまでの研究によって、化学気相成長（CVD法）で合成した遷移金属ダイカルコゲナイド（TMDC）を用いて高移動度・高電流オンオフ比・高柔軟性を実現し、本材料における素子応用の最低限の条件が満たされたとは言え、今後柔軟な論理回路実現に向けては解決すべき問題が残されている。ポイントとしては、CMOS論理回路構築のためのトランジスタの高性能化・極性制御、設備投資を激減させる印刷技術の導入、具体的な集積化の導入があげられる。そこで本研究において取り組むべき研究項目として、（i）様々なTMDC材料の合成技術を確立し、それらを用いたトランジスタの高性能化と極性制御、（ii）薄膜加工および印刷技術の確立、（iii）ウエハースケールでの論理回路作製、の三項目を通して柔軟性・伸縮性を有する最低限の電子素子作製に不可欠な基盤技術を構築し、世界初の印刷によるウェアラブル・コンピューティング実現の足がかりとする。