Faculty Profiles - shimizu takao

写真a

shimizu takao

Organization

School of Materials and Chemical Technology Visiting Associate Professor

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News & Topics

Ultra-thin ferroelectric material for next-generation electronics

2016/10/12

Languages： English

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Scientists at Tokyo Tech have demonstrated the potential of a new, thin-film ferroelectric material that could improve the performance of next-generation sensors and semi-conductors.
酸化ハフニウム基強誘電体の基礎特性を解明―超高密度で高速動作する不揮発性メモリー実現に道―

2016/09/12

Languages： Japanese

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概要東京工業大学元素戦略研究センター（センター長細野秀雄教授）の清水荘雄特任助教と物質理工学院兼同センターの舟窪浩教授、東北大学金属材料研究所の今野豊彦教授と木口賢紀准教授、物質・材料研究機構技術開発・共用部門坂田修身ステーション長らの研究グループは、スマホやパソコンのトランジスタ（スイッチ）に使われている酸化ハフニウムを基本組成とした、強誘電体の電源を切った時に貯められる電気の量や、使用可能な温度範囲といった基礎特性を解明した。結晶方位を制御した単結晶薄膜を電極上に作製することにより、これまで明らかになっていなかった特性の解明に成功した。その結果、酸化ハフニウム基の強誘電体が従来使用されてきた強誘電体に匹敵する特性を有することが明らかになった。強誘電体を用いたメモリーは、交通機関の定期券等に使用されている非接触式ICカード（電子マネー）として実用化されている。今回の成果によって明らかになった優れた特性と、これまでの物質では不可能であった薄膜化しても特性が劣化しない特性を活用すれば、メモリーの飛躍的な高密度化が期待できる。今回の研究成果はネイチャー誌の姉妹誌である学術誌「サイエンティフィックレポート（Scientific Reports）」オンライン版に9月9日付で掲載された。
Thin films offer promise for ferroelectric devices

2015/08/21

Languages： English
強誘電体の極薄単結晶膜を世界で初めて作製

2015/07/30

Languages： Japanese

Research Areas

Nanotechnology/Materials / Inorganic materials and properties

Papers

Domain-structure control in epitaxial Pb(Zr0.3Ti0.7)O3 thin films through strain engineering using Sr(Zr,Ti)O3 underlying layers and conductive bottom electrodes

Miki Nakahata, Keisuke Ishihama, Yoshitaka Ehara, Takao Shimizu, Lingling Xie, Daisuke Kan, Tomoaki Yamada, Kazuki Okamoto, Hiroshi Funakubo

Japanese Journal of Applied Physics 2026.7

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Publishing type：Research paper (scientific journal)

DOI： 10.35848/1347-4065/ae8603

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Bulk Amorphous Alumina: The Density-Driven Interplay of Pentahedral Pyramids and Octahedra for High Dielectric Permittivity

Hideki Hashimoto, Yohei Onodera, Rei Okuno, Masashi Miyakawa, Hitoshi Yusa, Takashi Taniguchi, Sho Kakizawa, Shuya Sato, Takao Shimizu, Taro Kuwano, Takato Abe, Naoki Takata, Dasom Kim, Koji Yazawa, Kenzo Deguchi, Shinobu Ohki, Koji Kimoto, Shunsuke Shimizu, Yuto Okawara, Yuta Nishina, Aiko Shimada, Ryuichi Maekawa, Koji Ohara, Yuta Shuseki, Hidetoshi Morita, Tomoko Sato, Hiroyo Segawa, Hiroki Taniguchi, Atsunobu Masuno, Takeharu Yoshii, Koji Kawada, Toshinori Okura, Shinji Kohara

Journal of the American Chemical Society 2026.4

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Publishing type：Research paper (scientific journal)

DOI： 10.1021/jacs.5c22344

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High Power Factor with Compositional and Temperature Stabilities in (Ca_xSr_1-x)Si₂ Thin Films near Room Temperature

Kodai Aoyama, Takao Shimizu, Takayoshi Katase, Yoshisato Kimura, Hiroshi Funakubo

ACS APPLIED ENERGY MATERIALS 8 ( 16 ) 12092 - 12098 2025.8

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1021/acsaem.5c01558

Web of Science

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Changes in the electronic structure of BaTiO3 due to ferroelectric phase transition investigated via polarization-dependent hard x-ray photoemission spectroscopy

Takeo Ohsawa, Shigenori Ueda, Takao Shimizu, Naoki Ohashi

Physical Review B 2025.4

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Publishing type：Research paper (scientific journal)

DOI： 10.1103/PhysRevB.111.165153

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Probing of Polarization Reversal in Ferroelectric (Al,Sc)N Films Using Single‐ and Tri‐Layered Structures With Different Sc/(Al+Sc) Ratio Reviewed

Shinnosuke Yasuoka, Takao Shimizu, Kazuki Okamoto, Nana Sun, Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Alexei Gruverman, Hiroshi Funakubo

Advanced Materials Interfaces 12 ( 2400627 ) 2025.3

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1002/admi.202400627

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Strain Control of (001)-Polar-Axis-Oriented Epitaxial Y-Doped HfO₂ Thin Films

Yoshiki Maekawa, Koji Hirai, Kazuki Okamoto, Takao Shimizu, Hiroshi Funakubo

ACS APPLIED ELECTRONIC MATERIALS 6 ( 8 ) 5525 - 5535 2024.7

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1021/acsaelm.4c00368

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Data-Driven Analysis of High-Resolution Hyperspectral Image Data Sets through Nanoscale Capacitance–Voltage Measurements to Visualize Ferroelectric Domain Dynamics

Yoshiomi Hiranaga, Yuki Noguchi, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho

ACS Applied Nano Materials 7 ( 8 ) 8525 - 8536 2024.4

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Publishing type：Research paper (scientific journal) Publisher：American Chemical Society (ACS)

DOI： 10.1021/acsanm.3c04636

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Phase Identification of 850 nm Thick 7%YO_1.5–93%HfO₂ Films by Surface and Cross-Sectional Raman Spectroscopies

Takanori Mimura, Yuma Takahashi, Takahisa Shiraishi, Masanori Kodera, Reijiro Shimura, Keisuke Ishihama, Kazuki Okamoto, Hiroki Moriwake, Ayako Taguchi, Takao Shimizu, Yasuhiro Fujii, Akitoshi Koreeda, Hiroshi Funakubo

ACS Applied Electronic Materials 6 ( 4 ) 2500 - 2506 2024.4

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Publishing type：Research paper (scientific journal) Publisher：American Chemical Society (ACS)

DOI： 10.1021/acsaelm.4c00134

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Domain structures of PbTiO3 and Pb(Zr,Ti)O3 thin films controlled by tensile strain induced by a Sr(Zr,Ti)O3 buffer layer

Tomohide Morikawa, Masanori Kodera, Takao Shimizu, Keisuke Ishihama, Yoshitaka Ehara, Osami Sakata, Hiroshi Funakubo

Applied Physics Letters 2024.1

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Publishing type：Research paper (scientific journal)

DOI： 10.1063/5.0180449

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Achieving High Piezoelectric Performance across a Wide Composition Range in Tetragonal (Bi,Na)TiO3-BaTiO3 Films for Micro-electromechanical Systems. International journal

Keisuke Ishihama, Takao Shimizu, Kazuki Okamoto, Akinori Tateyama, Wakiko Yamaoka, Risako Tsurumaru, Shintaro Yoshimura, Yusuke Sato, Hiroshi Funakubo

ACS applied materials & interfaces 16 ( 1 ) 1308 - 1316 2024.1

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Language：English Publishing type：Research paper (scientific journal)

Tetragonal (1-x)(Bi,Na)TiO3-xBaTiO3 films exhibit enhanced piezoelectric properties due to domain switching over a wide composition range. These properties were observed over a significantly wider composition range than the morphotropic phase boundary (MPB), which typically has a limited composition range of 1-2%. The polarization axis was found to be along the in-plane direction for the tetragonal composition range x = 0.06-1.0, attributed to the tensile thermal strain from the substrate during cooling after the film formation. A "two-step increase" in remanent polarization against an applied maximum electric field was observed at the high-field region due to the domain switching, and a very high piezoelectric response (effective d33 value, denoted as d33,f) over 220 pm/V was achieved for a wide composition range of x = 0.2-0.5 with high tetragonality, exceeding previously reported values for bulk ceramics. Moreover, a transverse piezoelectric coefficient, e31,f, of 19 C/m2 measured using a cantilever structure was obtained for a composition range of at least 10 atom % (for both x = 0.2 and 0.3). This value is the highest reported for Pb-free piezoelectric thin films and is comparable to the best data for Pb-based thin films. Reversible domain switching eliminates the need for conventional MPB compositions, allowing an improvement in the piezoelectric properties over a wider composition range. This strategy could provide a guideline for the development of environmentally acceptable lead-free piezoelectric films with composition-insensitive piezoelectric performance to replace Pb-based materials with MPB composition, such as PZT.

DOI： 10.1021/acsami.3c13302

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Development of Integrated Measurement System for Local C-V Mapping and Piezoresponse Force Microscopy

Yuki Noguchi, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yohiomi Hiranaga

2024 IEEE ULTRASONICS, FERROELECTRICS, AND FREQUENCY CONTROL JOINT SYMPOSIUM, UFFC-JS 2024 2024

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Language：English Publishing type：Research paper (international conference proceedings)

DOI： 10.1109/UFFC-JS60046.2024.10794165

Web of Science

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Invariant polarization switching kinetics in an (Al0.8Sc0.2)N film with frequency and temperature

Shinnosuke Yasuoka, Ryoichi Mizutani, Reika Ota, Takahisa Shiraishi, Takao Shimizu, Kazuki Okamoto, Masato Uehara, Hiroshi Yamada, Morito Akiyama, Hiroshi Funakubo

Applied Physics Letters 123 ( 20 ) 2023.11

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Publishing type：Research paper (scientific journal) Publisher：AIP Publishing

In this study, the switching kinetics in a (001)-out-of-plane-oriented (Al0.8Sc0.2)N thin film were systematically investigated as a function of temperature and frequency. The switching behavior followed the Kolmogorov–Avrami–Ishibashi model within the temperature and write-pulse width ranges of 300–473 K and 10 Hz–600 kHz, respectively. The switching speed increased linearly with the electric field, even at high electric fields. The frequency dependence of the coercive field (Ec) evaluated at room temperature revealed that the scaling regime of the domain-wall propagation did not transition to the flow regime, and the switching velocity of the domain increased linearly with the electric field even at high frequencies up to 600 kHz. The invariant domain-wall motion regime implies the potential of using (Al,Sc)N films for high-frequency applications. In addition, a formula for estimating the coercive field of an (Al,Sc)N film was derived by fitting the parameters obtained from the study of switching behavior. The formula indicated that the switching electric field tends to become insensitive to frequency as temperature increases. Moreover, the frequency dependency of the field was minimal even at room temperature. This is a useful index for estimating the drive voltage at the operating frequency and temperature.

DOI： 10.1063/5.0171108

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Full polarization reversal at room temperature in unsubstituted AlN

Kota Hasegawa, Takao Shimizu, Takeo Ohsawa, Isao Sakaguchi, Naoki Ohashi

Applied Physics Letters 2023.11

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Publishing type：Research paper (scientific journal)

DOI： 10.1063/5.0174236

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Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder

APL Materials 11 ( 8 ) 2023.8

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Publishing type：Research paper (scientific journal) Publisher：AIP Publishing

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2–ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development.

DOI： 10.1063/5.0148068

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Enhanced Thermoelectric Properties of SrSi2 Composite Films with Cubic and Layered Polymorphs

Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Takayoshi Katase, Yoshisato Kimura, Hiroshi Funakubo

ACS Applied Energy Materials 2023.6

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Publishing type：Research paper (scientific journal)

DOI： 10.1021/acsaem.3c00577

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Systematic Investigation of Ferroelectric Properties in x%YO1.5–(100–x%)Hf1–yZryO2 Films

Takanori Mimura, Yuki Tashiro, Takao Shimizu, Hiroshi Funakubo

ACS Applied Electronic Materials 2023.3

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Publishing type：Research paper (scientific journal)

DOI： 10.1021/acsaelm.2c01658

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Simultaneous high-frequency measurement of direct and inverse transverse piezoelectric coefficients of thin films using longitudinal vibration

Akinori Tateyama, Yuichiro Orino, Yoshiharu Ito, Takahisa Shiraishi, Takao Shimizu, Minoru Kuribayashi Kurosawa, Hiroshi Funakubo

Sensors and Actuators A: Physical 114265 - 114265 2023.2

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Publishing type：Research paper (scientific journal) Publisher：Elsevier BV

DOI： 10.1016/j.sna.2023.114265

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Film thickness dependence of in-plane ferroelastic domain structure in constrained tetragonal PbTiO₃ films induced by isotropic tensile strain

Yoshitaka Ehara, Takaaki Nakashima, Daichi Ichinose, Takao Shimizu, Takahisa Shiraishi, Osami Sakata, Tomoaki Yamada, Shintaro Yasui, Ken Nishida, Hiroshi Funakubo

Applied Physics Letters 121 ( 26 ) 262901 - 262901 2022.12

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Publishing type：Research paper (scientific journal) Publisher：AIP Publishing

In this study, the ferroelectric phase of PbTiO₃ (PTO) thin films was grown on cubic single-crystal KTaO₃ (KTO) substrates using metal–organic chemical vapor deposition. X-ray diffraction (XRD) was used to reveal an a₁ /a₂ domain structure, which remained unchanged down to a film thickness of 2 nm. The a₁ and a₂ polydomains do not have a simple tetragonal symmetry because a_a∥ and a_a_⊥ do not have the same values. The crystallographic tilt angle, α, is defined based on the rotation angle of the PTO lattice with respect to the cubic phase of KTO substrates. The in-plane tetragonal distortion ( c_a∥/ a_a∥) and α decreased with the decrease in the film thickness, following the in-plane tetragonal geometric equation: [Formula: see text]. The isotropic tensile strains induced in-plane polarization directions along the [100] and [010] axes of the substrates. These axes are formed via the a₁/ a₂ polydomain of the tetragonal-like phase. Moreover, synchrotron in-plane grazing incidence XRD and piezoelectric force microscopy were used to reveal the thickness dependency of the periodic domain width of the ferroelastic a₁/ a₂ domain. The periodic domain width in the PTO films decreased, following Kittel's law, with the reduction in the film thickness.

DOI： 10.1063/5.0119843

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Nanoscale mapping to assess the asymmetry of local C–V curves obtained from ferroelectric materials

Yoshiomi Hiranaga, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho

Japanese Journal of Applied Physics 61 ( SN ) SN1014 - SN1014 2022.11

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Publishing type：Research paper (scientific journal) Publisher：IOP Publishing

Abstract

The asymmetry in the capacitance–voltage (C–V) curves obtained from a ferroelectric material can provide information concerning the internal microstructure of a specimen. The present study visualized nanoscale switching of a HfO₂-based ferroelectric thin film in real space based on assessing asymmetry using a local C–V mapping method. Several parameters were extracted from the local C–V curves at each point. The parameter V_i, indicating the lateral shift of the local C–V curve, was employed as an indicator of local imprint. In addition, the differences in the areas between the C–V curves for the forward and reverse sweeps, S_f − S_r, provided another slightly different indicator of nanoscale switching asymmetry. These parameters obtained from asymmetric C–V curves are thought to be related to internal electric fields and local stress caused by defects in the film. The work reported here also involved a cluster analysis of the extracted parameters using the k-means method.

DOI： 10.35848/1347-4065/ac7f7a

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Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/ac7f7a/pdf
Tunable Ferroelectric Properties in Wurtzite (Al_0.8Sc_0.2)N via Crystal Anisotropy

Shinnosuke Yasuoka, Ryoichi Mizutani, Reika Ota, Takahisa Shiraishi, Takao Shimizu, Masato Uehara, Hiroshi Yamada, Morito Akiyama, Hiroshi Funakubo

ACS Applied Electronic Materials 2022.10

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Publishing type：Research paper (scientific journal) Publisher：American Chemical Society (ACS)

DOI： 10.1021/acsaelm.2c00999

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Preferential growth of (001)-oriented Bi2SiO5 thin films deposited on (101)-oriented rutile substrates and their ferroelectric and dielectric properties. International journal

Masanori Kodera, Keisuke Ishihama, Takao Shimizu, Hiroshi Funakubo

Scientific reports 12 ( 1 ) 15204 - 15204 2022.9

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Language：English Publishing type：Research paper (scientific journal)

Ferroelectric thin films are important because of their great potential for use in various electric devices such as ferroelectric random-access memory. It was expected that Bi2SiO5, a Si-containing ferroelectric material, would show improved ferroelectricity by targeting a film with the (001)-orientation (polar-axis) on the substrate. Although there was a narrow process window for the deposition of the (010)/(001)-oriented Bi2SiO5 thin film, it was successfully prepared on a (101)-oriented TiO2 single substrate using the pulsed layer deposition technique. The optimum film deposition conditions and film thickness were found, and in this material, the volume fraction of the (001)-oriented domain reached about 70%. By controlling film orientation to the polar axis, the remanent polarization value of this film was 4.8 μC cm-2, which is the highest value among reported Bi2SiO5.

DOI： 10.1038/s41598-022-19058-y

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Lower ferroelectric coercive field of ScGaN with equivalent remanent polarization as ScAlN

Masato Uehara, Ryouichi Mizutani, Shinnosuke Yasuoka, Takao Shimizu, Hiroshi Yamada, Morito Akiyama, Hiroshi Funakubo

Applied Physics Express 2022.8

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Publishing type：Research paper (scientific journal)

DOI： 10.35848/1882-0786/ac8048

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Enhancement of crystal anisotropy and ferroelectricity by decreasing thickness in (Al,Sc)N films

Shinnosuke Yasuoka, Ryoichi Mizutani, Reika Ota, Takahisa Shiraishi, Takao Shimizu, Shintaro Yasui, Yoshitaka Ehara, Ken Nishida, Masato Uehara, Hiroshi Yamada, Morito Akiyama, Yasuhiko Imai, Osami Sakata, Hiroshi Funakubo

Journal of the Ceramic Society of Japan 130 ( 7 ) 436 - 441 2022.7

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Publishing type：Research paper (scientific journal) Publisher：Ceramic Society of Japan

DOI： 10.2109/jcersj2.21184

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Preparation of orthorhombic Y-doped TaON film

Mimura, T., Shimizu, T., Funakubo, H.

Journal of the Ceramic Society of Japan 130 ( 7 ) 432 - 435 2022.7

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Language：English Publishing type：Research paper (scientific journal) Publisher：Ceramic Society of Japan

DOI： 10.2109/JCERSJ2.22002

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Effect of Film Microstructure on Domain Nucleation and Intrinsic Switching in Ferroelectric Y:HfO2 Thin Film Capacitors

Pratyush Buragohain, Adam Erickson, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Alexei Gruverman

ADVANCED FUNCTIONAL MATERIALS 32 ( 9 ) 2022.2

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1002/adfm.202108876

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Domain structures induced by tensile thermal strain in epitaxial PbTiO3 films on silicon substrates

Tomoya Sato, Masanori Kodera, Daichi Ichinose, Takanori Mimura, Takao Shimizu, Tomoaki Yamada, Hiroshi Funakubo

Journal of Applied Physics 2022.1

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Publishing type：Research paper (scientific journal)

DOI： 10.1063/5.0074884

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No‐Heating Deposition of 1‐μm‐Thick Y‐Doped HfO 2 Ferroelectric Films with Good Ferroelectric and Piezoelectric Properties by Radio Frequency Magnetron Sputtering Method

Reijiro Shimura, Takanori Mimura, Akinori Tateyama, Takahisa Shiraishi, Takao Shimizu, Tomoaki Yamada, Yoshitomo Tanaka, Yukari Inoue, Hiroshi Funakubo

physica status solidi (RRL) – Rapid Research Letters 2100574 - 2100574 2022.1

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Publishing type：Research paper (scientific journal) Publisher：Wiley

DOI： 10.1002/pssr.202100574

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Other Link： https://onlinelibrary.wiley.com/doi/full-xml/10.1002/pssr.202100574
Polar-axis-oriented epitaxial tetragonal (Bi,K)TiO3 films with large remanent polarization deposited below Curie temperature by a hydrothermal method

Yoshiharu Ito, Akinori Tateyama, Rurika Kubota, Takahisa Shiraishi, Takao Shimizu, Jaemyung Kim, Okkyun Seo, Osami Sakata, Minoru Kurosawa, Hiroshi Funakubo

Applied Physics Letters 120 ( 2 ) 022903 - 022903 2022.1

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Publishing type：Research paper (scientific journal) Publisher：AIP Publishing

DOI： 10.1063/5.0075014

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Lattice deformation and phase transition of aluminum nitride studied by density functional theory calculations

Hasegawa, K., Shimizu, T., Ohashi, N.

Journal of the Ceramic Society of Japan 130 ( 7 ) 2022

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Publishing type：Research paper (scientific journal)

DOI： 10.2109/JCERSJ2.21190

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Large Piezoelectric Response in Lead-Free (Bi0.5Na0.5)TiO3-Based Perovskite Thin Films by Ferroelastic Domain Switching: Beyond the Morphotropic Phase Boundary Paradigm

Takao Shimizu, Miyu Hasegawa, Keisuke Ishihama, Akinori Tateyama, Wakiko Yamaoka, Risako Tsurumaru, Shintaro Yoshimura, Yusuke Sato, Hiroshi Funakubo

ACS Applied Materials & Interfaces 2021.12

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Publishing type：Research paper (scientific journal) Publisher：American Chemical Society ({ACS})

DOI： 10.1021/acsami.1c15713

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Thickness dependence of phase stability in epitaxial (HfxZr1−x)O2 films

Takanori Mimura, Takao Shimizu, Osami Sakata, Hiroshi Funakubo

Physical Review Materials 5 ( 11 ) 2021.11

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Publishing type：Research paper (scientific journal)

DOI： 10.1103/PhysRevMaterials.5.114407

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High-precision local C–V mapping for ferroelectrics using principal component analysis

Yoshiomi Hiranaga, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho

Japanese Journal of Applied Physics 60 ( SF ) SFFB09 - SFFB09 2021.11

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Publishing type：Research paper (scientific journal) Publisher：IOP Publishing

DOI： 10.35848/1347-4065/ac13d9

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Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/ac13d9/pdf
Influence of cooling rate on ferroelastic domain structure for epitaxial (100)/(001)-oriented Pb(Zr, Ti)O3 thin films under tensile strain

Yoshitaka Ehara, Daichi Ichinose, Masanori Kodera, Takahisa Shiraishi, Takao Shimizu, Tomoaki Yamada, Ken Nishida, Hiroshi Funakubo

Japanese Journal of Applied Physics 60 ( SF ) SFFB07 - SFFB07 2021.11

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Publishing type：Research paper (scientific journal) Publisher：IOP Publishing

DOI： 10.35848/1347-4065/ac10f7

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Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/ac10f7/pdf
Demonstration of ferroelectricity in ScGaN thin film using sputtering method

Masato Uehara, Ryoichi Mizutani, Shinnosuke Yasuoka, Takahisa Shiraishi, Takao Shimizu, Hiroshi Yamada, Morito Akiyama, Hiroshi Funakubo

Applied Physics Letters 119 ( 17 ) 172901 - 172901 2021.10

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Publishing type：Research paper (scientific journal) Publisher：AIP Publishing

DOI： 10.1063/5.0068059

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Composition dependencies of crystal structure and electrical properties of epitaxial tetragonal (Bi, Na)TiO3–BaTiO3 films grown on (100)cSrRuO3//(100)SrTiO3 substrates by pulsed laser depositions

Keisuke Ishihama, Takao Shimizu, Wakiko Yamaoka, Risako Tsurumaru, Shintaro Yoshimura, Yusuke Sato, Hiroshi Funakubo

Journal of Applied Physics 2021.10

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Publishing type：Research paper (scientific journal)

DOI： 10.1063/5.0063385

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Thickness scaling of (Al0.8Sc0.2)N films with remanent polarization beyond 100 μC cm−2 around 10 nm in thickness

Ryoichi Mizutani, Shinnosuke Yasuoka, Takahisa Shiraishi, Takao Shimizu, Masato Uehara, Hiroshi Yamada, Morito Akiyama, Osami Sakata, Hiroshi Funakubo

Applied Physics Express 14 ( 10 ) 105501 - 105501 2021.10

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Publishing type：Research paper (scientific journal) Publisher：IOP Publishing

DOI： 10.35848/1882-0786/ac2261

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Other Link： https://iopscience.iop.org/article/10.35848/1882-0786/ac2261/pdf
Impact of Deposition Temperature on Crystal Structure and Ferroelectric Properties of (Al _{1− x} Sc _x )N Films Prepared by Sputtering Method

Shinnosuke Yasuoka, Takao Shimizu, Akinori Tateyama, Masato Uehara, Hiroshi Yamada, Morito Akiyama, Hiroshi Funakubo

physica status solidi (a) 218 ( 17 ) 2100302 - 2100302 2021.9

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Language：English Publishing type：Research paper (scientific journal)

DOI： 10.1002/pssa.202100302

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Other Link： https://onlinelibrary.wiley.com/doi/full-xml/10.1002/pssa.202100302
Comprehensive Study on the Kinetic Formation of the Orthorhombic Ferroelectric Phase in Epitaxial Y-Doped Ferroelectric HfO2 Thin Films

Yuki Tashiro, Takao Shimizu, Takanori Mimura, Hiroshi Funakubo

ACS Applied Electronic Materials 3 ( 7 ) 3123 - 3130 2021.7

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DOI： 10.1021/acsaelm.1c00342

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Growth of 0.1(Bi, Na)TiO3-0.9BaTiO3 epitaxial films by pulsed laser deposition and their electric properties

Keisuke Ishihama, Masanori Kodera, Takao Shimizu, Wakiko Yamaoka, Risako Tsurumaru, Shintaro Yoshimura, Yusuke Sato, Hiroshi Funakubo

J.Ceram. Soc. Jpn. Vol. 129 ( No. 7 ) 2021.7

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DOI： 10.2109/jcersj2.21002

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Local C-V Characterization for Ferroelectric Films

Yoshiomi Hiranaga, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho

IEEE International Symposium on Applications of Feeroelectric, ISAF 2021, International Symposium on Integrated Functionalities, ISIF 2021 and Piezoresponse Force Microscopy Workshop, PFM 2021 - Proceedings 2021.5

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DOI： 10.1109/ISAF51943.2021.9477316

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Electric‐Field‐Induced Ferroelectricity in 5%Y‐doped Hf 0.5 Zr 0.5 O 2 : Transformation from the Paraelectric Tetragonal Phase to the Ferroelectric Orthorhombic Phase

Takao Shimizu, Yuki Tashiro, Takanori Mimura, Takanori Kiguchi, Takahisa Shiraishi, Toyohiko J. Konnno, Osami Sakata, Hiroshi Funakubo

physica status solidi (RRL) – Rapid Research Letters 15 ( 5 ) 2000589 - 2000589 2021.5

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DOI： 10.1002/pssr.202000589

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Large thermal hysteresis of ferroelectric transition in HfO2-based ferroelectric films

Takanori Mimura, Takao Shimizu, Osami Sakata, Hiroshi Funakubo

Applied Physics Letters 118 ( 11 ) 2021.3

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DOI： 10.1063/5.0040934

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Preparation of 1 μm thick Y-doped HfO2 ferroelectric films on (111)Pt/TiO x /SiO2/(001)Si substrates by a sputtering method and their ferroelectric and piezoelectric properties

Reijiro Shimura, Takanori Mimura, Akinori Tateyama, Takao Shimizu, Tomoaki Yamada, Yoshitomo Tanaka, Yukari Inoue, Hiroshi Funakubo

Japanese Journal of Applied Physics 60 ( 3 ) 031009 - 031009 2021.3

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DOI： 10.35848/1347-4065/abe72e

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Domain structure transition in compressively strained (100)/(001) epitaxial tetragonal PZT film

Daichi Ichinose, Takao Shimizu, Osami Sakata, Tomoaki Yamada, Yoshitaka Ehara, Hiroshi Funakubo

Journal of Applied Physics 129 ( 2 ) 2021.1

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DOI： 10.1063/5.0031803

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Lamellar-like nanostructure in a relaxor ferroelectrics Pb(Mg<inf>1/3</inf>Nb<inf>2/3</inf>)O<inf>3</inf>

Yukio Sato, Syota Fujinaka, Syo Yamaguchi, Ryo Teranishi, Kenji Kaneko, Takao Shimizu, Hiroki Taniguchi, Hiroki Moriwake

Journal of Materials Science 56 ( 2 ) 1231 - 1241 2021.1

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DOI： 10.1007/s10853-020-05417-5

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Local C–V mapping for ferroelectrics using scanning nonlinear dielectric microscopy

Yoshiomi Hiranaga, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho

Journal of Applied Physics 128 ( 24 ) 244105 - 244105 2020.12

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DOI： 10.1063/5.0029630

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A computational search for wurtzite-structured ferroelectrics with low coercive voltages

Hiroki Moriwake, Rie Yokoi, Ayako Taguchi, Takafumi Ogawa, Craig A. J. Fisher, Akihide Kuwabara, Yukio Sato, Takao Shimizu, Yosuke Hamasaki, Hiroshi Takashima, Mitsuru Itoh

APL Materials 8 ( 12 ) 121102 - 121102 2020.12

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DOI： 10.1063/5.0023626

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Composition Dependence of Crystal Structures and Electrical Properties of Ca-Mg-Si Films Prepared by Sputtering

Atsuo Katagiri, Mutsuo Uehara, Mao Kurokawa, Kensuke Akiyama, Takao Shimizu, Masaaki Matsushima, Hiroshi Uchida, Yoshisato Kimura, Hiroshi Funakubo

Journal of Electronic Materials 49 ( 12 ) 7509 - 7517 2020.12

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DOI： 10.1007/s11664-020-08510-2

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Epitaxial Crystal Growth of Bismuth Silicate Driven by Fluorite-like Layers

Masanori Kodera, Takao Shimizu, Hiroshi Funakubo

Crystal Growth & Design 20 ( 11 ) 7163 - 7169 2020.11

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DOI： 10.1021/acs.cgd.0c00754

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Dependency of direct and inverse transverse piezoelectric properties on composition in self-polarized epitaxial (K x Na1−x )NbO3 films grown via a hydrothermal method

Akinori Tateyama, Yoshiharu Ito, Takao Shimizu, Yuichiro Orino, Minoru Kurosawa, Takeshi Yoshimura, Hiroshi Funakubo

Japanese Journal of Applied Physics 59 ( SP ) 2020.11

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DOI： 10.35848/1347-4065/aba9b3

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Temperature dependence on the domain structure of epitaxial PbTiO3 films grown on single crystal substrates with different lattice parameters

Yoshitaka Ehara, Takaaki Nakashima, Daichi Ichinose, Takao Shimizu, Tomoaki Yamada, Ken Nishida, Hiroshi Funakubo

Japanese Journal of Applied Physics 2020.11

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DOI： 10.35848/1347-4065/aba2bf

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Good piezoelectricity of self-polarized thick epitaxial (K,Na)NbO3 films grown below the Curie temperature (240 °C) using a hydrothermal method

Akinori Tateyama, Yoshiharu Ito, Yoshiko Nakamura, Takao Shimizu, Yuichiro Orino, Minoru Kurosawa, Hiroshi Uchida, Takahisa Shiraishi, Takanori Kiguchi, Toyohiko J. Konno, Takeshi Yoshimura, Hiroshi Funakubo

Applied Physics Letters 117 ( 14 ) 142903 - 142903 2020.10

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DOI： 10.1063/5.0017990

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Effects of deposition conditions on the ferroelectric properties of (Al1−xScx)N thin films

Shinnosuke Yasuoka, Takao Shimizu, Akinori Tateyama, Masato Uehara, Hiroshi Yamada, Morito Akiyama, Yoshiomi Hiranaga, Yasuo Cho, Hiroshi Funakubo

Journal of Applied Physics 128 ( 11 ) 114103 - 114103 2020.9

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DOI： 10.1063/5.0015281

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Optimization of deposition conditions of yttrium doped-SrZrO₃ thin films fabricated by pulsed laser deposition

Hiroki TANAKA, Kiyoshi UCHIYAMA, Takao SHIMIZU, Hiroshi FUNAKUBO

Journal of the Ceramic Society of Japan 128 ( 8 ) 436 - 440 2020.8

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DOI： 10.2109/jcersj2.19234

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High yield preparation of (100)_c-oriented (K,Na)NbO₃ thick films by hydrothermal method using amorphous niobium source Reviewed

Yoshiharu ITO, Akinori TATEYAMA, Yoshiko NAKAMURA, Takao SHIMIZU, Minoru KUROSAWA, Hiroshi UCHIDA, Takahisa SHIRAISHI, Takanori KIGUCHI, Toyohiko J. KONNO, Mutsuo ISHIKAWA, Nobuhiro KUMADA, Hiroshi FUNAKUBO

Journal of the Ceramic Society of Japan 128 ( 8 ) 512 - 517 2020.8

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DOI： 10.2109/jcersj2.20023

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Preparation of near-1-mu m-thick {100}-oriented epitaxial Y-doped HfO2 ferroelectric films on (100)Si substrates by a radio-frequency magnetron sputtering method

Reijiro Shimura, Takanori Mimura, Takao Shimizu, Yoshitomo Tanaka, Yukari Inoue, Hiroshi Funakubo

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN 128 ( 8 ) 539 - 543 2020.8

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DOI： 10.2109/jcersj2.20019

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Roles of polyunsaturated fatty acids, from mediators to membranes

Takeshi Harayama, Takao Shimizu

Journal of Lipid Research 61 ( 8 ) 1150 - 1160 2020.8

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DOI： 10.1194/jlr.R120000800

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Large Electromechanical Responses Driven by Electrically Induced Dense Ferroelastic Domains: Beyond Morphotropic Phase Boundaries Reviewed

Mitsumasa Nakajima, Takao Shimizu, Hiroshi Nakaki, Tomoaki Yamada, Ayumi Wada, Takaaki Nakashima, Yoshitaka Ehara, Hiroshi Funakubo

ACS Applied Electronic Materials 2 ( 7 ) 1908 - 1916 2020.7

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DOI： 10.1021/acsaelm.0c00220

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Thermoelectric (Ba x Sr1–x )Si2 films prepared by sputtering method over the barium solubility limit

Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo

Japanese Journal of Applied Physics 59 2020.4

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DOI： 10.7567/1347-4065/ab645b

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Thickness- and orientation- dependences of Curie temperature in ferroelectric epitaxial Y doped HfO2 films

Takanori Mimura, Takao Shimizu, Yoshio Katsuya, Osami Sakata, Hiroshi Funakubo

Japanese Journal of Applied Physics 59 2020.4

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DOI： 10.35848/1347-4065/ab6d84

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Epitaxial growth of Mg2Si films on (111) Si substrates covered with epitaxial SiC layers

Atsuo Katagiri, Shota Ogawa, Takao Shimizu, Masaaki Matsushima, Kensuke Akiyama, Hiroshi Uchida, Hiroshi Funakubo

Japanese Journal of Applied Physics 2020.4

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DOI： 10.7567/1347-4065/ab65b0

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Fabrication and characterization of ReO3-type dielectric films

Masanori Kodera, Ayako Taguchi, Takao Shimizu, Hiroki Moriwake, Hiroshi Funakubo

JOURNAL OF MATERIALS CHEMISTRY C 8 ( 14 ) 4680 - 4684 2020.4

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DOI： 10.1039/d0tc00821d

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Fabrication and characterization of ReO<inf>3</inf>-type dielectric films

Masanori Kodera, Ayako Taguchi, Takao Shimizu, Hiroki Moriwake, Hiroshi Funakubo

Journal of Materials Chemistry C 8 ( 14 ) 4680 - 4684 2020.4

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DOI： 10.1039/d0tc00821d

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Room-temperature deposition of ferroelectric HfO2-based films by the sputtering method

Takanori Mimura, Takao Shimizu, Hiroshi Uchida, Hiroshi Funakubo

Applied Physics Letters 116 ( 6 ) 2020.2

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DOI： 10.1063/1.5140612

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Electric field-induced change in the crystal structure of MOCVD-Pb(Zr,Ti)O3 films near the phase boundary Reviewed

Hidehisa Inoue, Takao Shimizu, Hiroshi Funakubo

Japanese Journal of Applied Physics 2019.11

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DOI： 10.7567/1347-4065/ab37ef

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Ferroelectric properties of epitaxial Bi2SiO5 thin films grown on SrTiO3 substrates with various orientations Reviewed

Masanori Kodera, Takao Shimizu, Hiroshi Funakubo

Japanese Journal of Applied Physics 2019.11

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DOI： 10.7567/1347-4065/ab36cf

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Growth of epitaxial (K, Na)NbO3 films with various orientations by hydrothermal method and their properties Reviewed

YOSHIHARU ITO, Akinori Tateyama, Yoshiko Nakamura, Takao Shimizu, Minoru Kuribayashi KUROSAWA, Hiroshi UCHIDA, Takahisa Shiraishi, Takanori KIGUCHI, Toyohiko J Konno, Mutsuo Ishikawa, Hiroshi FUNAKUBO

Japanese Journal of Applied Physics 58 2019.11

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DOI： 10.7567/1347-4065/ab3958

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Electric-Field-Driven Nanosecond Ferroelastic-Domain Switching Dynamics in Epitaxial Pb(Zr,Ti)O-3 Film

Hyeon Jun Lee, Takao Shimizu, Hiroshi Funakubo, Yasuhiko Imai, Osami Sakata, Seung Hyun Hwang, Tae Yeon Kim, Changjae Yoon, Cheng Dai, Long Q. Chen, Su Yong Lee, Ji Young Jo

PHYSICAL REVIEW LETTERS 123 ( 21 ) 2019.11

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DOI： 10.1103/PhysRevLett.123.217601

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Interface structure of Pb(Zr,Ti)O3/MgO(001) epitaxial thin film in early stage of Stranski–Krastanov growth mode Reviewed

T. Kiguchi, Y. Kodama, T. Shimizu, T. Shiraishi, N. Wakiya, T. J. Konno

Jpn. J. Appl. Phys. 58 SLLA08-1 - SLLA08-11 2019.9

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DOI： 10.7567/1347-4065/ab3b13

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Ferroelastic domain motion by pulsed electric field in (111)/(111¯) rhombohedral epitaxial Pb(Zr0.65Ti0.35)O3 thin films: Fast switching and relaxation Reviewed

Yoshitaka Ehara, Takao Shimizu, Shintaro Yasui, Takahiro Oikawa, Takahisa Shiraishi, Hiroki Tanaka, Noriyuki Kanenko, Ronald Maran, Tomoaki Yamada, Yasuhiko Imai, Osami Sakata, Nagarajan Valanoor, Hiroshi Funakubo

Physical Review B 100 ( 10 ) 2019.9

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DOI： 10.1103/PhysRevB.100.104116

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Deposition of orientation-controlled thick (K,Na)NbO3 films on metal substrates by repeated hydrothermal deposition technique Reviewed

Yoshiharu ITO, Akinori TATEYAMA, Yoshiko NAKAMURA, Takao SHIMIZU, Minoru KUROSAWA, Hiroshi UCHIDA, Takahisa SHIRAISHI, Takanori KIGUCHI, Toyohiko J. KONNO, Mutsuo ISHIKAWA, Hiroshi. FUNAKUBO

J. Ceram. Soc. Jpn. 127 ( 7 ) 478 - 484 2019.7

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DOI： 10.2109/jcersj2.

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Ferroelectricity in YO1.5-HfO2 films around 1 μm in thickness Reviewed

Takanori Mimura, Takao Shimizu, Hiroshi Funakubo

Applied Physics Letters 115 ( 3 ) 2019.7

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DOI： 10.1063/1.5097880

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Formation of the orthorhombic phase in CeO2-HfO2 solid solution epitaxial thin films and their ferroelectric properties Reviewed

T. Shiraishi, S. Choi, T. Kiguchi, T. Shimizu, H. Funakubo, T. J. Konno

Applied Physics Letters 2019.6

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DOI： 10.1063/1.5097980

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Evaluation of phase and thermoelectric properties of thin film SrSi₂ Reviewed

Aoyama, K., Shimizu, T., Kuramochi, H., Mesuda, M., Akiike, R., Kimura, Y., Funakubo, H.

Journal of the Ceramic Society of Japan 127 ( 6 ) pp. 394 - 398 2019.6

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DOI： 10.2109/jcersj2.19016

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Effects of heat treatment and in situ high-temperature X-ray diffraction study on the formation of ferroelectric epitaxial Y-doped HfO2 film Reviewed

Takanori Mimura, Takao Shimizu, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Yoshio Katsuya, Osami Sakata, Hiroshi Funakubo

Japanese Journal of Applied Physics 58 SBBB09-1 - SBBB09-5 2019.2

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DOI： 10.7567/1347-4065/aafed1

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Epitaxial growth of doped HfO2 ferroelectric materials

Takao Shimizu, Hiroshi Funakubo

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices 173 - 192 2019.1

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DOI： 10.1016/B978-0-08-102430-0.00004-8

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Effects of starting materials on the deposition behavior of hydrothermally synthesized {1 0 0} _c -oriented epitaxial (K,Na)NbO ₃ thick films and their ferroelectric and piezoelectric properties Reviewed

Tateyama, A., Ito, Y., Nakamura, Y., Shimizu, T., Orino, Y., Kurosawa, M., Uchida, H., Shiraishi, T., Kiguchi, T., Konno, T.J., Kumada, N., Funakubo, H.

Journal of Crystal Growth 511 1 - 7 2019.1

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DOI： 10.1016/j.jcrysgro.2019.01.019

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Structural origin of temperature-dependent ferroelectricity

Park, M.H., Shimizu, T., Funakubo, H., Schroeder, U.

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices 2019

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DOI： 10.1016/B978-0-08-102430-0.00012-7

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Formation of polar phase in Fe-doped ZrO2 epitaxial thin films Reviewed

S. Choi, T. Shiraishi, T. Kiguchi, T. Shimizu, H. Funakubo, T. J. Konno

Applied Physics Letters 113 ( 26 ) 262903 - 262903 2018.12

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DOI： 10.1063/1.5063757

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Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films Reviewed

Takao Shimizu, Takanori Mimura, Takanori Kiguchi, Takahisa Shiraishi, Toyohiko Konno, Yoshio Katsuya, Osami Sakata, Hiroshi Funakubo

Applied Physics Letters 113 ( 21 ) 212901 - 212901 2018.11

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DOI： 10.1063/1.5055258

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Epitaxial growth of perovskite-type oxide thin film on (111)SrTiO3 substrate using (101)PdO as a buffer layer Reviewed

Hiroki Tanaka, Kiyoshi Uchiyama, Takahiro Oikawa, Takao Shimizu, Hiroshi Funakubo

Japanese Journal of Applied Physics 57 ( 11S ) 11UF04 - 11UF04 2018.11

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DOI： 10.7567/JJAP.57.11UF04

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Epitaxial ferroelectric Y-doped HfO2 film grown by the RF magnetron sputtering Reviewed

Taisei Suzuki, Takao Shimizu, Takanori Mimura, Hiroshi Uchida, Hiroshi Funakubo

Japanese Journal of Applied Physics 57 ( 11S ) 11UF15 2018.11

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DOI： 10.7567/JJAP.57.11UF15

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Domain orientation relationship of orthorhombic and coexisting monoclinic phases of YO_1.5-doped HfO₂ epitaxial thin films Reviewed

Kiguchi, T., Shiraishi, T., Shimizu, T., Funakubo, H., Konno, T.J.

Japanese Journal of Applied Physics 57 ( 11 ) 11UF16-1 - 11UF16-7 2018.10

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DOI： 10.7567/JJAP.57.11UF16

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Thickness-dependent crystal structure and electric properties of epitaxial ferroelectric Y2O3-HfO2 films Reviewed

Takanori Mimura, Takao Shimizu, Hiroshi Uchida, Osami Sakata, Hiroshi Funakubo

Applied Physics Letters 113 ( 10 ) 102901 - 102901 2018.9

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DOI： 10.1063/1.5040018

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Domain structure transition from two to three dimensions in tensile strained (100)/(001)-oriented epitaxial tetragonal PZT film Reviewed

Daichi Ichinose, Takao Shimizu, Osami Sakata, Tomoaki Yamada, Hiroshi Funakubo

Applied Physics Letters 113 ( 13 ) 132905 - 132905 2018.9

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DOI： 10.1063/1.5042470

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Fabrication of ferroelectric Fe doped HfO₂ epitaxial thin films by ion-beam sputtering method and their characterization Reviewed

Shiraishi, T., Choi, S., Kiguchi, T., Shimizu, T., Uchida, H., Funakubo, H., Konno, T.J.

Japanese Journal of Applied Physics 57 ( 11 ) 11UF02-1 - 11UF02-5 2018.8

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DOI： 10.7567/JJAP.57.11UF02

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Time response demonstration of in situ lattice deformation under an applied electric field by synchrotron-based time-resolved X-ray diffraction in polar-axis-oriented epitaxial Pb(Zr,Ti)O3 film Reviewed

Tomoya Sato, Daichi Ichinose, Naoya Oshima, Takanori Mimura, Yuichi Nemoto, Takao Shimizu, Yasuhiko Imai, Hiroshi Uchida, Osami Sakata, Hiroshi Funakubo

JAPANESE JOURNAL OF APPLIED PHYSICS 57 ( 9 ) 0902B8-1 - 0902B8-5 2018.6

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DOI： 10.7567/jjap.57.0902b8

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Stability of the orthorhombic phase in (111)-oriented YO1.5-substituted HfO2 films Reviewed

Takao Shimizu, Kiliha Katayama, Hiroshi Funakubo

Journal of the Ceramic Society of Japan 126 ( 5 ) 269 - 275 2018.5

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DOI： 10.2109/jcersj2.17247

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Growth of (111)-oriented epitaxial magnesium silicide (Mg2Si) films on (001) Al2O3 substrates by RF magnetron sputtering and their properties Reviewed

Atsuo Katagiri, Shota Ogawa, Mutsuo Uehara, P. S. Sankara Rama Krishnan, Mao Kurokawa, Masaaki Matsushima, Takao Shimizu, Kensuke Akiyama, Hiroshi Funakubo

Journal of Materials Science 53 ( 7 ) 5151 - 5158 2018.4

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DOI： 10.1007/s10853-017-1902-z

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In situ observation of crystal structure dynamics in ferroelectric films under application of an electric field Reviewed

FUNAKUBO Hiroshi, SHIMIZU Takao, 坂田修身

SPring-8/SACLA Research Frontiers 2017 36 - 37 2018.3

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Ferroelectric materials have a switchable spontaneous polarization and also have pyroelectric and piezoelectric properties. Using such properties, they have been widely applied to many electronic devices, including sensors and actuators. Recently, they have also been applied to energy harvesting devices using mechanical vibration from an environmental source. Therefore, they have become one of the key materials for sensor network systems to a sustain an aging society, for example, by monitoring the movements of elderly people living alone.

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Ferroelectricity in HfO₂ and related ferroelectrics

Shimizu, T.

Journal of the Ceramic Society of Japan 126 ( 9 ) 2018

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DOI： 10.2109/jcersj2.18104

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Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf0.5Zr0.5)O-2 thin films deposited on various substrates Reviewed

Takahisa Shiraishi, Kiliha Katayama, Tatsuhiko Yokouchi, Takao Shimizu, Takahiro Oikawa, Osami Sakata, Hiroshi Uchida, Yasuhiko Imai, Takanori Kiguchi, Toyohiko J. Konno, Hiroshi Funakubo

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 70 239 - 245 2017.11

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DOI： 10.1016/j.mssp.2016.12.008

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Dynamic observation of ferroelectric domain switching using scanning nonlinear dielectric microscopy Reviewed

Yoshiomi Hiranaga, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho

JAPANESE JOURNAL OF APPLIED PHYSICS 56 ( 10 ) 2017.10

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DOI： 10.7567/JJAP.56.10PF16

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Electric-field-induced lattice distortion in epitaxial BiFeO<inf>3</inf> thin films as determined by in situ time-resolved x-ray diffraction Reviewed

Seiji Nakashima, Osami Sakata, Hiroshi Funakubo, Takao Shimizu, Daichi Ichinose, Kota Takayama, Yasuhiko Imai, Hironori Fujisawa, Masaru Shimizu

Applied Physics Letters 111 ( 8 ) 2017.8

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DOI： 10.1063/1.5000495

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In-situ observation of ultrafast 90 degrees domain switching under application of an electric field in (100)/(001)-oriented tetragonal epitaxial Pb(Zr0.4Ti0.6)O-3 thin films Reviewed

Yoshitaka Ehara, Shintaro Yasui, Takahiro Oikawa, Takahisa Shiraishi, Takao Shimizu, Hiroki Tanaka, Noriyuki Kanenko, Ronald Maran, Tomoaki Yamada, Yasuhiko Imai, Osami Sakata, Nagarajan Valanoor, Hiroshi Funakubo

SCIENTIFIC REPORTS 7 2017.8

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DOI： 10.1038/s41598-017-09389-6

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Crystal structure and magnetism in kappa-Al2O3-type AlxFe2-xO3 films on SrTiO3(111) Reviewed

Yosuke Hamasaki, Takao Shimizu, Shintaro Yasui, Takahisa Shiraishi, Akihiro Akama, Takanori Kiguchi, Tomoyasu Taniyama, Mitsuru Itoh

JOURNAL OF APPLIED PHYSICS 122 ( 1 ) 2017.7

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DOI： 10.1063/1.4990947

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Preparation of preferentially (111)-oriented Mg2Si thin films on (001)Al2O3 and (100)CaF2 substrates and their thermoelectric properties Reviewed

Mao Kurokawa, Mutsuo Uehara, Daichi Ichinose, Takao Shimizu, Kensuke Akiyama, Masaaki Matsushima, Hiroshi Uchida, Yoshisato Kimura, Hiroshi Funakubo

JAPANESE JOURNAL OF APPLIED PHYSICS 56 ( 5 ) 2017.5

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DOI： 10.7567/JJAP.56.05DC02

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Preparation of preferentially (111)-oriented Mg

Kurokawa Mao, Uehara Mutsuo, Ichinose Daichi, Shimizu Takao, Akiyama Kensuke, Matsushima Masaaki, Uchida Hiroshi, Kimura Yoshisato, Funakubo Hiroshi

Jpn. J. Appl. Phys. 56 ( 5 ) 05DC02 2017.3

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Mg<inf>2</inf>Si thin films were deposited at 320 °C on (001)Al<inf>2</inf>O<inf>3</inf>and (100)CaF<inf>2</inf>substrates by radio-frequency magnetron sputtering. Both films showed a preferential (111) out-of-plane orientation with an in-plane random orientation irrespective of post-heat treatment. Mg<inf>2</inf>Si films on (001)Al<inf>2</inf>O<inf>3</inf>substrates were under in-plane tensile strain, while those on (100)CaF<inf>2</inf>substrates were under in-plane compressive strain both before and after heat treatment. Heat-treated films showed p-type conduction up to 500 °C. Their electrical conductivity and Seebeck coefficient were almost independent of the kind of substrate within the limit of the present study, from 0.22% compressive strain to 0.34% tensile strain at room temperature.

DOI： 10.7567/JJAP.56.05DC02

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Effect of in-plane tensile strain in (100)/(001)-oriented epitaxial PbTiO3 films on their phase transition temperature and tetragonal distortion Reviewed

Takaaki Nakashima, Daichi Ichinose, Yoshitaka Ehara, Takao Shimizu, Takeshi Kobayashi, Tomoaki Yamada, Hiroshi Funakubo

APPLIED PHYSICS LETTERS 110 ( 12 ) 2017.3

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DOI： 10.1063/1.4978649

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Orientation change with substrate type and composition in (100)/(001)-oriented epitaxial tetragonal Pb(ZrxTi1-x)O-3 films Reviewed

Daichi Ichinose, Takaaki Nakashima, Yoshitaka Ehara, Takahiro Oikawa, Takao Shimizu, Osami Sakata, Tomoaki Yamada, Hiroshi Funakubo

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN 125 ( 6 ) 458 - 462 2017

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DOI： 10.2109/jcersj2.16326

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Epitaxial growth of YO1.5 doped HfO2 films on (100) YSZ substrates with various concentrations Reviewed

Takao Shimizu, Kiliha Katayama, Hiroshi Funakubo

FERROELECTRICS 512 ( 1 ) 105 - 110 2017

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DOI： 10.1080/00150193.2017.1349994

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Crystal structure and dielectric/ferroelectric properties of CSD-derived HfO2-ZrO2 solid solution films Reviewed

Chihoko Abe, Shuhei Nakayama, Marina Shiokawa, Hiroaki Kawashima, Kiliha Katayama, Takahisa Shiraishi, Takao Shimizu, Hiroshi Funakubo, Hiroshi Uchida

CERAMICS INTERNATIONAL 43 S501 - S505 2017

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DOI： 10.1016/j.ceramint.2017.05.253

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Theoretical calculations of ferroelectric phase transition of thin film HfO₂

Moriwake Hiroki, Konishi Ayako, Togo Atsushi, Shimizu Takao, Funakubo Hiroshi

Meeting Abstracts of the Physical Society of Japan 72 2282 - 2282 2017

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DOI： 10.11316/jpsgaiyo.72.2.0_2282

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Evidence of ferroelectricity in ferrimagnetic kappa-Al2O3-type In0.25Fe1.75O3 films Reviewed

Yosuke Hamasaki, Takao Shimizu, Shintaro Yasui, Tomoyasu Taniyama, Mitsuru Itoh

APPLIED PHYSICS LETTERS 109 ( 16 ) 2016.10

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DOI： 10.1063/1.4964826

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Growth of epitaxial tetragonal (Bi, K)TiO3 films and their ferroelectric and piezoelectric properties Reviewed

Yuichi Nemoto, Daichi Ichinose, Takao Shimizu, Hiroshi Uchida, Wakiko Yamaoka, Yusuke Sato, Hiroshi Funakubo

JAPANESE JOURNAL OF APPLIED PHYSICS 55 ( 10 ) 2016.10

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DOI： 10.7567/JJAP.55.10TA13

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Fabrication and characterization of (111)-epitaxial Pb(Zr0.35Ti0.65)O-3/Pb(Zr0.65Ti0.35)O-3 artificial superlattice thin films Reviewed

Tomoaki Yamada, Youhei Ebihara, Takanori Kiguchi, Osami Sakata, Hitoshi Morioka, Takao Shimizu, Hiroshi Funakubo, Toyohiko J. Konno, Masahito Yoshino, Takanori Nagasaki

JAPANESE JOURNAL OF APPLIED PHYSICS 55 ( 10 ) 2016.10

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DOI： 10.7567/JJAP.55.10TA20

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Growth of epitaxial tetragonal (Bi,K)TiO

Nemoto Yuichi, Ichinose Daichi, Shimizu Takao, Uchida Hiroshi, Yamaoka Wakiko, Sato Yusuke, Funakubo Hiroshi

Jpn. J. Appl. Phys. 55 ( 10 ) 10TA13 2016.9

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(Bi,K)TiO<inf>3</inf>films were grown on (001)<inf>c</inf>SrRuO<inf>3</inf>// (100)SrTiO<inf>3</inf>substrates by pulsed laser deposition (PLD) at various temperatures. The K/Ti and Bi/Ti ratios of the films were almost the same at 350 and 500 °C, but decreased markedly at 650 °C. The ferroelectric property was ascertained for epitaxial tetragonal (Bi,K)TiO<inf>3</inf>films grown at 500 °C from polarization–electric field relationships, and their saturation polarization (P<inf>sat</inf>) and coercive field (E<inf>c</inf>) at a maximum electric field of 800 kV/cm were 18 µC/cm²and 300 kV/cm, respectively. To improve the ferroelectric property, the films were heat-treated at 650 °C while keeping the films in the PLD chamber after film deposition. These films also maintained a (001)-oriented epitaxy and had a tetragonal symmetry. The P<inf>sat</inf>and E<inf>c</inf>obtained at an electric field of 800 kV/cm were changed to 22 µC/cm²and 95 kV/cm, respectively. Moreover, these P<inf>sat</inf>and E<inf>c</inf>values increased to 31 µC/cm²and 165 kV/cm, respectively, at a maximum electric field of 1500 kV/cm. These heat-treated (Bi,K)TiO<inf>3</inf>films showed piezoelectricity with an apparent piezoelectric coefficient (d<inf>33(AFM)</inf>) of 22 pm/V.

DOI： 10.7567/JJAP.55.10TA13

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The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film Reviewed

Takao Shimizu, Kiliha Katayama, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Osami Sakata, Hiroshi Funakubo

SCIENTIFIC REPORTS 6 2016.9

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DOI： 10.1038/srep32931

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Mechanism of polarization switching in wurtzite-structured zinc oxide thin films Reviewed

Ayako Konishi, Takafumi Ogawa, Craig A. J. Fisher, Akihide Kuwabara, Takao Shimizu, Shintaro Yasui, Mitsuru Itoh, Hiroki Moriwake

APPLIED PHYSICS LETTERS 109 ( 10 ) 150 - 153 2016.9

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DOI： 10.1063/1.4962440

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Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices Reviewed

Kiliha Katayama, Takao Shimizu, Osami Sakata, Takahisa Shiraishi, Syogo Nakamura, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Hiroshi Uchida, Hiroshi Funakubo

APPLIED PHYSICS LETTERS 109 ( 11 ) 2016.9

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DOI： 10.1063/1.4962431

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Crystal Isomers of ScFeO3 Reviewed

Yosuke Hamasaki, Takao Shimizu, Shintaro Yasui, Tomoyasu Taniyama, Osami Sakata, Mitsuru Itoh

CRYSTAL GROWTH & DESIGN 16 ( 9 ) 5214 - 5222 2016.9

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DOI： 10.1021/acs.cgd.6b00770

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Formation of (111) orientation-controlled ferroelectric orthorhombic HfO2 thin films from solid phase via annealing Reviewed

Takanori Mimura, Kiliha Katayama, Takao Shimizu, Hiroshi Uchida, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Osami Sakata, Hiroshi Funakubo

APPLIED PHYSICS LETTERS 109 ( 5 ) 2016.8

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DOI： 10.1063/1.4960461

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Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O-2 thin films Reviewed

Takahisa Shiraishi, Kiliha Katayama, Tatsuhiko Yokouchi, Takao Shimizu, Takahiro Oikawa, Osami Sakata, Hiroshi Uchida, Yasuhiko Imai, Takanori Kiguchi, Toyohiko J. Konno, Hiroshi Funakubo

APPLIED PHYSICS LETTERS 108 ( 26 ) 262904 - 262904 2016.6

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DOI： 10.1063/1.4954942

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Preparation of Ca-Si Films on (001) Al2O3 Substrates by an RF Magnetron Sputtering Method and Their Electrical Properties Reviewed

Mutsuo Uehara, Kensuke Akiyama, Takao Shimizu, Masaaki Matsushima, Hiroshi Uchida, Yoshisato Kimura, Hiroshi Funakubo

JOURNAL OF ELECTRONIC MATERIALS 45 ( 6 ) 3121 - 3126 2016.6

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DOI： 10.1007/s11664-016-4404-x

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Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films Reviewed

Kiliha Katayama, Takao Shimizu, Osami Sakata, Takahisa Shiraishi, Shogo Nakamura, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Hiroshi Uchida, Hiroshi Funakubo

JOURNAL OF APPLIED PHYSICS 119 ( 13 ) 134101 - 134101 2016.4

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DOI： 10.1063/1.4945029

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Layer thickness dependences of piezoelectric response in tetragonal/rhombohedral Pb(Zr_xTi_1-x)O₃ artificial superlattice thin films

Yamada Tomoaki, Ebihara Youhei, Sakata Osami, Morioka Hitoshi, Kiguchi Takanori, Shimizu Takao, Funakubo Hiroshi, Yoshino Masahito, Nagasaki Takanori

JSAP Annual Meetings Extended Abstracts 2016.1 1218 - 1218 2016.3

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DOI： 10.11470/jsapmeeting.2016.1.0_1218

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Crystal structure and compositional analysis of epitaxial (K0.56Na0.44) NbO3 films prepared by hydrothermal method Reviewed

Takahisa Shiraishi, Hiro Einishi, Takao Shimizu, Hiroshi Funakubo, Minoru Kurosawa, Hiroshi Uchida, Nobuhiro Kumada, Takanori Kiguchi, Toyohiko J. Konno

JOURNAL OF MATERIALS RESEARCH 31 ( 6 ) 693 - 701 2016.3

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DOI： 10.1557/jmr.2016.56

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Thermally stable dielectric responses in uniaxially (001)-oriented CaBi4Ti4O15 nanofilms grown on a Ca2Nb3O10- nanosheet seed layer Reviewed

Junichi Kimura, Itaru Takuwa, Masaaki Matsushima, Takao Shimizu, Hiroshi Uchida, Takanori Kiguchi, Takahisa Shiraishi, Toyohiko J. Konno, Tatsuo Shibata, Minoru Osada, Takayoshi Sasaki, Hiroshi Funakubo

SCIENTIFIC REPORTS 6 2016.2

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DOI： 10.1038/srep20713

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High temperature stability of the dielectric and insulating properties of Ca(Ti, Zr)SiO5 ceramics Reviewed

Junichi Kimura, Hiroki Taniguchi, Takashi Iijima, Takao Shimizu, Shintaro Yasui, Mitsuru Itoh, Hiroshi Funakubo

APPLIED PHYSICS LETTERS 108 ( 6 ) 062902 - 062902 2016.2

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DOI： 10.1063/1.4941803

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Growth of {110}-one-axis-oriented perovskite-type oxide films using self-aligned epitaxial (101)PdO//(111) Pd double layers Reviewed

Hiroki Tanaka, Tetsuro Kariya, Takao Shimizua, Kiyoshi Uchiyama, Hiroshi Funakubo

THIN SOLID FILMS 599 133 - 137 2016.1

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DOI： 10.1016/j.tsf.2015.12.067

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Simultaneous achievement of high dielectric constant and low temperature dependence of capacitance in (111)-oriented BaTiO3-Bi(Mg0.5Ti0.5)O-3-BiFeO3 solid solution thin films Reviewed

Junichi Kimura, Mohamed-Tahar Chentir, Takao Shimizu, Hiroshi Uchida, Hiroshi Funakubo

AIP ADVANCES 6 ( 1 ) 015304 - 015304 2016.1

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DOI： 10.1063/1.4939818

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Domain structure of tetragonal Pb(Zr,Ti)O-3 nanorods and its size dependence Reviewed

Tomoaki Yamada, Daisuke Ito, Osami Sakata, Junki Kuroishi, Takahiro Namazu, Yasuhiko Imai, Takahisa Shiraishi, Takao Shimizu, Hiroshi Funakubo, Masahito Yoshino, Takanori Nagasaki

JAPANESE JOURNAL OF APPLIED PHYSICS 54 ( 10 ) 10NA07 2015.10

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DOI： 10.7567/JJAP.54.10NA07

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Domain Structure in epitaxial orthorhombic HfO₂-based films

Shimizu Takao, Katayma Kiliha, Kiguchi Takanori, Akama Takahiro, Konno Toyohiko, Uchida Hiroshi, Sakata Osami, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2015.2 1183 - 1183 2015.8

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DOI： 10.11470/jsapmeeting.2015.2.0_1183

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Domain structure in {100}- and {111}-oriented Pb(Zr,Ti)O₃ nanorods and its size dependence

Yamada Tomoaki, Ito Daisuke, Sakata Osami, Kuroishi Junki, Namazu Takahiro, Shimizu Takao, Funakubo Hiroshi, Yoshino Masahito, Nagasaki Takanori

JSAP Annual Meetings Extended Abstracts 2015.2 1177 - 1177 2015.8

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DOI： 10.11470/jsapmeeting.2015.2.0_1177

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Growth of epitaxial orthorhombic HfO₂-based films on Si substrate

Katayama Kiliha, Shimizu Takao, Kiguchi Takanori, Akama Akihiro, Toyohiko Konno, Uchida Hiroshi, Sakata Osami, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2015.2 1182 - 1182 2015.8

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DOI： 10.11470/jsapmeeting.2015.2.0_1182

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Negligible substrate clamping effect on piezoelectric response in (111)-epitaxial tetragonal Pb(Zr, Ti)O-3 films Reviewed

Tomoaki Yamada, Jun Yasumoto, Daisuke Ito, Osami Sakata, Yasuhiko Imai, Takanori Kiguchi, Takahisa Shiraishi, Takao Shimizu, Hiroshi Funakubo, Masahito Yoshino, Takanori Nagasaki

JOURNAL OF APPLIED PHYSICS 118 ( 7 ) 072012 - 6 2015.8

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DOI： 10.1063/1.4927810

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Stabilizing the ferroelectric phase in doped hafnium oxide Reviewed

M. Hoffmann, U. Schroeder, T. Schenk, T. Shimizu, H. Funakubo, O. Sakata, D. Pohl, M. Drescher, C. Adelmann, R. Materlik, A. Kersch, T. Mikolajick

JOURNAL OF APPLIED PHYSICS 118 ( 7 ) 72006 - 72006 2015.8

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DOI： 10.1063/1.4927805

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Orientation control of epitaxial tetragonal Pb(ZrxTi1-x)O-3 thin films grown on (100)KTaO3 substrates by tuning the Zr/(Zr plus Ti) ratio Reviewed

Daichi Ichinose, Takaaki Nakashima, Yoshitaka Ehara, Takahiro Oikawa, Takao Shimizu, Osami Sakata, Tomoaki Yamada, Hiroshi Funakubo

APPLIED PHYSICS LETTERS 107 ( 2 ) 2015.7

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DOI： 10.1063/1.49269631

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Growth of epitaxial orthorhombic YO1.5-substituted HfO2 thin film Reviewed

Takao Shimizu, Kiliha Katayama, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Hiroshi Funakubo

APPLIED PHYSICS LETTERS 107 ( 3 ) 032910 - 032910 2015.7

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DOI： 10.1063/1.4927450

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Contribution of oxygen vacancies to the ferroelectric behavior of Hf0.5Zr0.5O2 thin films Reviewed

Takao Shimizu, Tatsuhiko Yokouchi, Takahiro Oikawa, Takahisa Shiraishi, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Alexei Gruverman, Hiroshi Funakubo

APPLIED PHYSICS LETTERS 106 ( 11 ) 112904 - 112904 2015.3

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DOI： 10.1063/1.4915336

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Fabrication of Tetragonal Pb(Zr,Ti)O-3 Nanorods by Focused Ion Beam and Characterization of the Domain Structure Reviewed

D. Ito, T. Yamada, M. Yoshino, T. Nagasaki, O. Sakata, J. Kuroishi, T. Namazu, T. Shiraishi, T. Shimizu, H. Funakubo

2015 JOINT IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRIC, INTERNATIONAL SYMPOSIUM ON INTEGRATED FUNCTIONALITIES AND PIEZOELECTRIC FORCE MICROSCOPY WORKSHOP (ISAF/ISIF/PFM) 175 - 177 2015

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DOI： 10.1109/ISAF.2015.7172698

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Lead- and alkali-metal-free BaTiO

Kimura Junichi, Mohamed-Tahar Chentir, Shimizu Takao, Uchida Hiroshi, Funakubo Hiroshi

Jpn. J. Appl. Phys. 53 ( 9 ) 09PA12 2014.9

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Lead- and alkali-metal-free BaTiO<inf>3</inf>–Bi(Mg<inf>0.5</inf>Ti<inf>0.5</inf>)O<inf>3</inf>–BiFeO<inf>3</inf>solid-solution thin films were prepared on (111)<inf>c</inf>SrRuO<inf>3</inf>/(111)Pt/TiO<inf>2</inf>/SiO<inf>2</inf>/(100)Si substrates by chemical solution deposition (CSD) and their crystal structure and dielectric properties were investigated. The lattice spacing as a function of z/(x + z) in xBaTiO<inf>3</inf>–0.1Bi(Mg<inf>0.5</inf>Ti<inf>0.5</inf>)O<inf>3</inf>–zBiFeO<inf>3</inf>indicated the existence of phase boundaries (pseudocubic/rhombohedral) in the range of z/(x + z) = 0.33–0.56, where the relatively high relative dielectric constant, ε<inf>r</inf>, of above 800 was obtained. On the other hand, dielectric loss, tan δ, of below 0.2 was confirmed in the range z/(x + z) = 0–0.87, which rapidly increased toward z/(x + z) = 1.0. The relatively high ε<inf>r</inf>values of these films deposited on Si substrates by a solution-based process suggest that they can be used as alternative to Pb(Zr,Ti)O<inf>3</inf>, KNbO<inf>3</inf>, and (Bi<inf>1/2</inf>Na<inf>1/2</inf>)TiO<inf>3</inf>-based films.

DOI： 10.7567/JJAP.53.09PA12

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Orientation Dependence of Converse Piezoelectric Effect in Tetragonal PZT Thin Films and Nanorods

Yamada Tomoaki, Yasumoto Jun, Ito Daisuke, Sakata Osami, Imai Yasuhiko, Shiraishi Takahisa, Shimizu Takao, Funakubo Hiroshi, Yoshino Masahito, Nagasaki Takanori

JSAP Annual Meetings Extended Abstracts 2014.2 3885 - 3885 2014.9

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DOI： 10.11470/jsapmeeting.2014.2.0_3885

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Study on the effect of heat treatment conditions on metalorganic-chemical-vapor-deposited ferroelectric Hf0.5Zr0.5O2 thin film on Ir electrode Reviewed

Takao Shimizu, Tatsuhiko Yokouchi, Takahisa Shiraishi, Takahiro Oikawa, P. S. Sankara Rama Krishnan, Hioshi Funakubo

JAPANESE JOURNAL OF APPLIED PHYSICS 53 ( 9 ) 09PA04 2014.9

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DOI： 10.7567/JJAP.53.09PA04

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Lead- and alkali-metal-free BaTiO3-Bi(Mg0.5Ti0.5)O-3-BiFeO3 solid-solution thin films with high dielectric constant prepared on Si substrates by solution-based method Reviewed

Junichi Kimura, Chentir Mohamed-Tahar, Takao Shimizu, Hiroshi Uchida, Hiroshi Funakubo

JAPANESE JOURNAL OF APPLIED PHYSICS 53 ( 9 ) 09PA12 2014.9

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DOI： 10.7567/JJAP.53.09PA12

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Ferroelectricity in wurtzite structure simple chalcogenide Reviewed

Hiroki Moriwake, Ayako Konishi, Takafumi Ogawa, Koji Fujimura, Craig A. J. Fisher, Akihide Kuwabara, Takao Shimizu, Shintaro Yasui, Mitsuru Itoh

APPLIED PHYSICS LETTERS 104 ( 24 ) 242909 - 242909 2014.6

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DOI： 10.1063/1.4884596

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Electrical Properties of (110)-Oriented Nondoped Mg2Si Films with p-Type Conduction Prepared by RF Magnetron Sputtering Method Reviewed

Shota Ogawa, Atsuo Katagiri, Takao Shimizu, Masaaki Matsushima, Kensuke Akiyama, Yoshisato Kimura, Hiroshi Uchida, Hiroshi Funakubo

JOURNAL OF ELECTRONIC MATERIALS 43 ( 6 ) 2269 - 2273 2014.6

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DOI： 10.1007/s11664-014-3040-6

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High Temperature Reproducible Preparation of Mg₂Si Films on (001)Al₂O₃ substrates Using RF Magnetron Sputtering Method

Atsuo Katagiri, Shota Ogawa, Takao Shimizu, Masaaki Matsushima, Kensuke Akiyama, Hiroshi Funakubo

MRS Proceedings 1642 2014.5

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DOI： 10.1557/opl.2014.447

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Raman Tensor Analysis of Crystalline Lead Titanate by Quantitative Polarized Spectroscopy Reviewed

Y. Fujii, M. Noju, T. Shimizu, H. Taniguchi, M. Itoh, I. Nishio

FERROELECTRICS 462 ( 1 ) 120 - 125 2014.4

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DOI： 10.1080/00150193.2014.890470

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Epitaxial growth of metastable multiferroic AlFeO3 film on SrTiO3 (111) substrate Reviewed

Yosuke Hamasaki, Takao Shimizu, Hiroki Taniguchi, Tomoyasu Taniyama, Shintaro Yasui, Mitsuru Itoh

APPLIED PHYSICS LETTERS 104 ( 8 ) 082906 - 082906 2014.2

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DOI： 10.1063/1.4866798

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Low temperature preparation of KNbO3 films by hydrothermal method and their characterization Reviewed

N. Kaneko, T. Shiraishi, M. Kurosawa, T. Shimizu, H. Funakubo

Materials Research Society Symposium Proceedings 1659 mrsf13 - 1659 2014

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DOI： 10.1557/opl.2014.180

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Crystal Structure Analysis of Hydrothermally Synthesized Epitaxial (KxNa1-x)NbO3 Films Reviewed

Takahisa Shiraishi, Noriyuki Kaneko, Hiro Einishi, Takao Shimizu, Minoru Kurosawa, Hiroshi Uchida, Takeshi Kobayashi, Takanori Kiguchi, Toyohiko J. Konno, Hiroshi Funakubo

JAPANESE JOURNAL OF APPLIED PHYSICS 52 ( 9 ) 09KA11 - 1 2013.9

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DOI： 10.7567/JJAP.52.09KA11

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Comparative study of phase transitions in BaTiO3 thin films grown on (001)- and (110)-oriented SrTiO3 substrate Reviewed

Takao Shimizu, Dai Suwama, Hiroki Taniguchi, Tomoyasu Taniyama, Mitsuru Itoh

JOURNAL OF PHYSICS-CONDENSED MATTER 25 ( 13 ) 132001 - 132001 2013.4

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DOI： 10.1088/0953-8984/25/13/132001

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Structural Modification and Domain Structure in a BaTiO3 Film on (110) SrTiO3 Reviewed

Takao Shimizu, Dai Suwama, Hiroki Taniguchi, Tomoyasu Taniyama, Mitsuru Itoh

APPLIED PHYSICS EXPRESS 6 ( 1 ) 015803 - 015803 2013.1

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DOI： 10.7567/APEX.6.015803

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Origin of the dielectric response in Ba0.767Ca0.233TiO3 Reviewed

Takao Shimizu, Desheng Fu, Hiroki Taniguchi, Tomoyasu Taniyama, Mitsuru Itoh

APPLIED PHYSICS LETTERS 100 ( 10 ) 102908 - 102908 2012.3

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DOI： 10.1063/1.3693524

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Mechanism for suppression of ferroelectricity in Cd<inf>1-x</inf>Ca <inf>x</inf>TiO<inf>3</inf> Reviewed

Hiroki Taniguchi, Hwee Ping Soon, Takao Shimizu, Hiroki Moriwake, Yue Jin Shan, Mitsuru Itoh

Physical Review B - Condensed Matter and Materials Physics 84 ( 17 ) 2011.11

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DOI： 10.1103/PhysRevB.84.174106

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Mechanism for suppression of ferroelectricity in Cd1-xCaxTiO3 Reviewed

Hiroki Taniguchi, Hwee Ping Soon, Takao Shimizu, Hiroki Moriwake, Yue Jin Shan, Mitsuru Itoh

PHYSICAL REVIEW B 84 ( 17 ) 174106 - 174106 2011.11

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Phonon Dynamics in BiFeO3 Studied by Raman Scattering Reviewed

Takao Shimizu, Takuro Era, Hiroki Taniguchi, Desheng Fu, Tomoyasu Taniyama, Mitsuru Itoh

FERROELECTRICS 403 ( 1 ) 187 - 190 2010

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DOI： 10.1080/00150191003751422

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Ferroelectric phase transition of <math display="inline"> <mrow> <msub> <mrow> <mtext>Cd</mtext> </mrow> <mn>2</mn> </msub> <msub> <mrow> <mtext>Nb</mtext> </mrow> <mn>2</mn> </msub> <msub> <mtext>O</mtext> <mn>7</mn> </msub> </mrow> </math> studied by Ra Reviewed

Taniguchi, Hiroki, Shimizu, Takao, Kawaji, Hitoshi, Atake, Tooru, Itoh, Mitsuru, Tachibana, Makoto

Physical Review B 77 ( 22 ) 224104 - 224104 2008

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Analysis of Nanoscale Ferroelectric Domain Dynamics Based on Image Processing of Local C-V Maps

Yohiomi Hiranaga, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho

2024 IEEE Ultrasonics, Ferroelectrics, and Frequency Control Joint Symposium (UFFC-JS) 1 - 3 2024.9

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DOI： 10.1109/uffc-js60046.2024.10793582

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In-situ observation of crystal structure for (100)/(001)-oriented tetragonal Pb(Zr,Ti)O₃ films

中畑美紀, 岡本一輝, 石濱圭佑, 清水荘雄, 小金澤智之, 仲谷友孝, 坂田修身, 山田智明, 山田智明, 舟窪浩

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Preparation of BaTiO3-based epitaxial film with in-plane polarization

清水荘雄, 岡本一輝, 舟窪浩, 小金澤智之, 仲谷友孝, 坂田修身

日本セラミックス協会年会講演予稿集(Web) 2024 2024

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ReO₃型酸フッ化物NbO₂Fの誘電特性発現機構

田口綾子, 森分博紀, 小寺正徳, 舟窪浩, 清水荘雄

JFCC研究成果集 2024 2024

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Frequency dependence of piezoelectric response for (100)/(001)-oriented tetragonal Pb(Zr,Ti)O₃ films

中畑美紀, 岡本一輝, 石濱圭佑, 清水荘雄, 小金澤智之, KUMARA Rosantha, 仲谷友孝, 池田理, 坂田修身, 山田智明, 山田智明, 舟窪浩

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Fabrication of perovskite structure Sr(Zr,Ti)O₃ buffer layers for ferroelectric domain control.

石濱圭佑, 岡本一輝, 森川友秀, 舟窪浩, 小寺正徳, 小寺正徳, 清水荘雄, 小金澤智之, 仲谷友孝, 坂田修身

日本セラミックス協会年会講演予稿集(Web) 2024 2024

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Analysis of Nanoscale Ferroelectric Polarization Inversion Dynamics Based on Image Processing of Local C-V Maps

平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄

応用物理学会春季学術講演会講演予稿集(CD-ROM) 71st 2024

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Development of Integrated Measurement System for Local C-V Mapping and Piezoresponse Force Microscopy

野口雄貴, 三村和仙, 清水荘雄, 舟窪浩, 平永良臣

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Investigation of Sr(Zr,Ti)O₃ Buffer Layers for Controlling Domain Structure of Ferroelectric Thin Films.

石濱圭佑, 岡本一輝, 小寺正徳, 小寺正徳, 森川友秀, 清水荘雄, 清水荘雄, 舟窪浩

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Post heat treatment of (Bi, K)TiO₃-based thin films prepared by hydrothermal method and their local structure

村下太一, 岡本一輝, 高橋雄真, 窪田るりか, 伊東良晴, 藤井康裕, 是枝聡肇, 清水荘雄, 小林俊介, 加藤丈晴, HUANG Hsin-Hui, 森分博紀, 幾原雄一, 幾原雄一, 舟窪浩

電子材料研究討論会プログラム講演予稿集(CD-ROM) 43rd 2023

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Evaluation of electrical properties for epitaxial (Al,Sc)N film deposited on NbN electrode

安岡慎之介, 大田怜佳, 岡本一輝, 清水荘雄, 清水荘雄, 舟窪浩

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Statistical Evaluation of Correlation Between Grain Boundaries and Ferroelectric Domain Behavior Based on Machine Learning Analysis of Local C-V Maps

平永良臣, 野口雄貴, 三村和仙, 清水荘雄, 舟窪浩, 長康雄

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Orientation control of Y-doped HfO₂ thin films using lattice matching

前川芳輝, 平井浩司, 岡本一輝, 清水荘雄, 舟窪浩

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Characterization of ferroelectric switching properties for multilayer (Al,Sc)N films with various composition ratio

安岡慎之介, 岡本一輝, 清水荘雄, 清水荘雄, 松井尚子, 入澤寿和, 恒川孝二, 舟窪浩

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Growth and characterization of Y-doped HfO2 epitaxial films on various substrates

前川芳輝, 平井浩司, 安岡慎之介, 岡本一輝, 清水荘雄, 舟窪浩

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Domain structure and phase transition in tensile-strained (Pb_xSr_1-x)TiO₃ ultra-thin films

山田智明, 山田智明, YUAN Xueyou, 太田悠登, 清水荘雄, 岡本一輝, 吉野正人, 舟窪浩, 長崎正雅

日本セラミックス協会秋季シンポジウム講演予稿集(Web) 36th 2023

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The ferroelectric properties of (Al,Sc)N thin film controlled by in-plane orientation and thermal strain

Yasuoka Shinnosuke, Mizutani Ryoichi, Ota Reika, Shiraishi Takahisa, Shimizu Takao, Uehara Masato, Yamada Hiroshi, Akiyama Morito, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2022.1 1143 - 1143 2022.2

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DOI： 10.11470/jsapmeeting.2022.1.0_1143

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Enhancement of crystal anisotropy and ferroelectric property by decreasing thickness in (Al,Sc)N films

安岡慎之介, 水谷涼一, 大田怜佳, 白石貴久, 清水荘雄, 清水荘雄, 清水荘雄, 安井伸太郎, 江原祥隆, 西田謙, 上原雅人, 山田浩志, 秋山守人, 今井康彦, 坂田修身, 舟窪浩

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Thermal Hysteresis During Ferroelectric Transition in HfO₂-based Materials

三村和仙, 清水荘雄, 清水荘雄, 坂田修身, 坂田修身, 舟窪浩

日本物理学会講演概要集(CD-ROM) 77 ( 1 ) 2022

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Examination of scaling down in (Al, Sc)N films for memory applications

安岡慎之介, 大田怜佳, 岡本一輝, 石濱圭佑, 清水荘雄, 清水荘雄, 角嶋邦之, 上原雅人, 山田浩志, 秋山守人, 小金澤智之, KUMARA L. S. R., SEO O., 坂田修身, 舟窪浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 83rd 2022

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Cluster Analysis of Nanoscale Domain Dynamics in Ferroelectric Thin Films Using Local C-V Mapping Method

平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 83rd 2022

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Post perovskite structure in piezoelectric and ferroelectric films

Funakubo Hiroshi, Shiraishi Takahisa, Shimizu Takao

JSAP Annual Meetings Extended Abstracts 2021.2 135 - 135 2021.8

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DOI： 10.11470/jsapmeeting.2021.2.0_135

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HfO₂基材料における強誘電性の発現機構—Mechanism for Emergence of Ferroelectricity in HfO₂-based Materials—特集 Society5.0に貢献する誘電体材料・デバイス研究の新展開

清水荘雄, 三村和仙, 舟窪浩

Ceramics Japan = セラミックス : bulletin of the Ceramic Society of Japan 56 ( 7 ) 455 - 458 2021.7

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ウルツ鉱構造窒化物の強誘電性—Ferroelectric Properties of Wurtzite-structured Nitride Films—特集 Society5.0に貢献する誘電体材料・デバイス研究の新展開

舟窪浩, 安岡慎之介, 水谷涼一, 清水荘雄

Ceramics Japan = セラミックス : bulletin of the Ceramic Society of Japan 56 ( 7 ) 443 - 446 2021.7

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Characterization of tetragonal (1-x)(Bi,Na)TiO₃- xBaTiO₃ films deposited on various substrates.

Ishihama Keisuke, Tateyama Akinori, Shimizu Takao, Sato Yusuke, Yamaoka Wakiko, Tsurumaru Risako, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2021.1 1181 - 1181 2021.2

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DOI： 10.11470/jsapmeeting.2021.1.0_1181

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Growth and ferroelectric properties of epitaxial (Al_1-xSc_x)N films.

Yasuoka Shinnosuke, Shimizu Takao, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2021.1 1187 - 1187 2021.2

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DOI： 10.11470/jsapmeeting.2021.1.0_1187

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Temperature dependence of the ferroelectricity in (Sc_xAl_1-x)N thin films

Mizutani Ryoichi, Yasuoka Shinnosuke, Shimizu Takao, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2021.1 1188 - 1188 2021.2

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DOI： 10.11470/jsapmeeting.2021.1.0_1188

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Domain structures of PbTiO₃ epitaxial thin films prepared on Sr(Zr, Ti)O₃-buffered substrates with various lattice constants

森川友秀, 小寺正徳, 清水荘雄, 江原祥隆, 舟窪浩

応用物理学会春季学術講演会講演予稿集(CD-ROM) 68th 2021

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Emergence of ferroelectricity in Y-substituted HfO₂

清水荘雄, 清水荘雄, 田代裕貴, 三村和仙, 舟窪浩

日本セラミックス協会秋季シンポジウム講演予稿集(Web) 34th 2021

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Nanoscale Mapping of Domain Switching Behavior in Ferroelectric Films

平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄

応用物理学会春季学術講演会講演予稿集(CD-ROM) 68th 2021

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Preparation of Y doped HZO ferroelectric thick films at room temperature by the sputtering method and their electrical and piezoelectric properties

志村礼司郎, 三村和仙, 舘山明紀, 清水荘雄, 清水荘雄, 白石貴久, 舟窪浩

応用物理学会春季学術講演会講演予稿集(CD-ROM) 68th 2021

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Noise Reduction by Principal Component Analysis for Local C-V Mapping

平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 82nd 2021

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Mechanism for Emergence of Ferroelectricity in HfO₂-based Materials

清水荘雄, 三村和仙, 舟窪浩

セラミックス 56 ( 7 ) 2021

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Development of High-performance PZT Thin Films Utilizing Ferroelastic Domain Switching Induced by Applying a High-speed Electric Field

江原祥隆, 清水荘雄, 舟窪浩

セラミックス 56 ( 7 ) 2021

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ウルツ鉱型強誘電体のマテリアルズインフォマティクス

森分博紀, 横井里江, 田口綾子, 小川貴文, FISHER Craig, 桑原彰秀, 佐藤幸生, 清水荘雄, 浜嵜容丞, 高島浩, 伊藤満

JFCC研究成果集 2021 2021

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ウルツ鉱構造窒化物の強誘電性 : 強誘電体の脱ペロブスカイト構造酸化物

舟窪浩, 安岡慎之介, 清水荘雄

Fine ceramics report 39 ( 3 ) 92 - 95 2021

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Proposal for simultaneous characterization of direct and inverse piezoelectricity using longitudinal vibration

Tateyama Akinori, Ito Yoshiharu, Shimizu Takao, Orino Yuichiro, Kurosawa Minoru, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2020.2 877 - 877 2020.8

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DOI： 10.11470/jsapmeeting.2020.2.0_877

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Ferroelectric properties of room temperature-deposited (Al_1-xSc_x)N films by the sputtering method.

Yasuoka Shinnosuke, Shimizu Takao, Uehara Masato, Yamada Hiroshi, Akiyama Morito, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2020.2 886 - 886 2020.8

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DOI： 10.11470/jsapmeeting.2020.2.0_886

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Crystal growth of Bi₂SiO₅ epitaxial thin film

Kodera Masanori, Shimizu Takao, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2020.1 1230 - 1230 2020.2

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DOI： 10.11470/jsapmeeting.2020.1.0_1230

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Effect of deposition condition on the ferroelectric properties of (Al_1-xSc_x)N thin films.

Yasuoka Shinnosuke, Shimizu Takao, Uehara Masato, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2020.1 1228 - 1228 2020.2

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Ferroelectricity of GaN and Sc-doped GaN Thin Films Prepared by Sputtering Method

Uehara Masato, Yasuoka Shinnosuke, Shimizu Takao, Yamada Hirosshi, Akiyama Morito, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2020.1 1229 - 1229 2020.2

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Simultaneous characterization of direct and inverse piezoelectricity using longitudinal vibration for self-poled (K_xNa_1-x)NbO₃ films prepared by hydrothermal method

Tateyama Akinori, Ito Yoshiharu, Shimizu Takao, Orino Yuichiro, Kurosawa Minoru, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2020.1 1251 - 1251 2020.2

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DOI： 10.11470/jsapmeeting.2020.1.0_1251

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Evaluation of tetragonal (1-x)(Bi,Na)TiO₃-xBaTiO₃ films prepared by PLD method.

Ishihama Keisuke, Tateyama Akinori, Shimizu Takao, Sato Yusuke, Yamaoka Wakiko, Ishida Mirai, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2020.1 1252 - 1252 2020.2

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DOI： 10.11470/jsapmeeting.2020.1.0_1252

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HfO₂基薄膜のZr,Yドープによる結晶相変化と強誘電相の安定性

田代裕貴, 三村和仙, 清水荘雄, 勝矢良雄, 坂田修身, 木口賢紀, 白石貴久, 今野豊彦, 舟窪浩

セラミックス基礎科学討論会講演要旨集 58th 2020

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ReO₃-type oxyfluoride thin films aiming for dielectric materials

小寺正徳, 舟窪浩, 清水荘雄, 田口綾子, 森分博紀

日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM) 33rd 2020

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Study on preparation method for strain-free PZT thin films

森川友秀, 小寺正徳, 江原祥隆, 清水荘雄, 舟窪浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 81st 2020

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Investigation of the stabilization of the orthorhombic phase using epitaxial HfO₂ based films

三村和仙, 清水荘雄, 舟窪浩

応用物理学会春季学術講演会講演予稿集(CD-ROM) 67th 2020

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Preparation of HfO₂-based ferroelectric thick film by the sputtering method at room temperature and its electrical properties

志村礼司郎, 三村和仙, 舘山明紀, 清水荘雄, 舟窪浩

応用物理学会春季学術講演会講演予稿集(CD-ROM) 67th 2020

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Preparation of HfO₂-based ferroelectric thick films at room temperature by the sputtering method and their electrical and piezoelectric properties

志村礼司郎, 三村和仙, 舘山明紀, 清水荘雄, 舟窪浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 81st 2020

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圧電材料の研究と応用 HfO₂およびZrO₂基強誘電体膜の厚膜化と室温合成

三村和仙, 志村礼司郎, 舟窪浩, 清水荘雄

超音波Techno 32 ( 5 ) 2020

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Dielectric properties of ReO₃-type oxyfluoride thin films

小寺正徳, 舟窪浩, 清水荘雄, 田口綾子, 森分博紀

日本セラミックス協会年会講演予稿集(CD-ROM) 2020 2020

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Thickness-dependent a₁/a₂ domain structure evolution of PbTiO₃ thin films with in-plane polarization

江原祥隆, 中島崇明, 一ノ瀬大地, 清水荘雄, 西田謙, 山田智明, 舟窪浩

応用物理学会春季学術講演会講演予稿集(CD-ROM) 67th 2020

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Fabrication and characterization of (CaxSr1-x)Si-2 films prepared by co-sputtering method

Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo

MRS ADVANCES 5 ( 10 ) 451 - 458 2020

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DOI： 10.1557/adv.2020.67

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Preparations of AeSi₂ films by a co-sputtering process

Aoyama Kodai, Shimizu Takao, Kuramochi Hideto, Mesuda Masami, Akiike Ryo, Ide Keisuke, Katase Takayoshi, Kamiya Toshio, Kimura Yoshisato, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2019.2 2999 - 2999 2019.9

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DOI： 10.11470/jsapmeeting.2019.2.0_2999

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Evaluation of structural change by electric field and piezoelectricity of PZT film with near MPB composition

Inoue Hidehisa, Shimizu Takao, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2019.2 1399 - 1399 2019.9

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DOI： 10.11470/jsapmeeting.2019.2.0_1399

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Effect of compositionand thickness on domain structure in (Pb_xSr_1-x)TiO₃ films

Ota Yuto, Yamada Tomoaki, Yoshino Masahito, shimizu Takao, Funakubo Hiroshi, Nagasaki Takanori

JSAP Annual Meetings Extended Abstracts 2019.2 1397 - 1397 2019.9

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DOI： 10.11470/jsapmeeting.2019.2.0_1397

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Thermoelectric property for Ba_xSr_1-xSi₂ films by co-sputtering process

Aoyama Kodai, Shimizu Takao, Kuramochi Hideto, Mesuda Masami, Akiike Ryo, Ide Keisuke, Katase Takayoshi, Kamiya Toshio, Kimura Yoshisato, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2019.1 1843 - 1843 2019.2

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DOI： 10.11470/jsapmeeting.2019.1.0_1843

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X-ray diffraction study under electric field on PZT films near morphotropic phase boundary

Inoue Hidehisa, Ichinose Daichi, Shimizu Takao, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2019.1 1235 - 1235 2019.2

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DOI： 10.11470/jsapmeeting.2019.1.0_1235

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Fabrication of ferroelectric (Hf,Ce)O₂ thin films and their crystal structure analysis

Shiraishi Takahisa, Choi Sujin, Shimizu Takao, Kiguchi Takanori, Funakubo Hiroshi, Konno Toyohiko J.

JSAP Annual Meetings Extended Abstracts 2019.1 1225 - 1225 2019.2

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DOI： 10.11470/jsapmeeting.2019.1.0_1225

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Preparation of CaMgSi and Ca7Mg7.25Si14 Single Phase Films and Their Thermoelectric Properties” Reviewed

Matsuo UEHARA, Atsuo KATAGIRI, Mao KUROKAWA, Kensuke AKIYAMA, Takao SHIMIZU, Masaaki MATSUMOTO, Hiroshi UCHIDA, Yoshihisa KIMURA, Hiroshi FUNAKUBO

MRS Adv. 4 ( 25-26 ) 1503 - 1508 2019.2

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DOI： 10.1557/adv.2019.129

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水熱合成法で作製した(K_xNa_1-x)NbO₃自己分極膜の圧電特性の評価

舘山明紀, 伊東良晴, 清水荘雄, 折野裕一郎, 黒澤実, 吉村武, 舟窪浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 80th 2019

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PLD法を用いたY,ZrドープHfO₂薄膜の作製と評価

田代裕貴, 三村和仙, 清水荘雄, 舟窪浩

セラミックス基礎科学討論会講演要旨集 57th 2019

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スパッタリング法により配向制御したHfO₂基強誘電体厚膜の作製およびその電気特性評価

志村礼司郎, 三村和仙, 清水荘雄, 舟窪浩

応用物理学会春季学術講演会講演予稿集(CD-ROM) 66th 2019

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PLD法を用いたY,ZrドープHfO₂薄膜の作製と評価

田代裕貴, 三村和仙, 清水荘雄, 舟窪浩

応用物理学会春季学術講演会講演予稿集(CD-ROM) 66th 2019

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HfO₂基薄膜の電界誘起相転移

田代裕貴, 三村和仙, 清水荘雄, 勝矢良雄, 坂田修身, 木口賢紀, 白石貴久, 今野豊彦, 舟窪浩

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スパッタリング法を用いたY:HfO₂強誘電体膜の室温成膜

三村和仙, 清水荘雄, 舟窪浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 80th 2019

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水熱合成法で作製した(K,Na)NbO₃配向膜の圧電定数,e_31,f,の評価

舘山明紀, 伊東良晴, 中村美子, 清水荘雄, 折野裕一郎, 黒澤実, 内田寛, 白石貴久, 木口賢紀, 今野豊彦, 熊田伸弘, 吉村武, 舟窪浩

応用物理学会春季学術講演会講演予稿集(CD-ROM) 66th 2019

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強誘電性ハフニア薄膜におけるドメイン構造のイメージング

木口賢紀, 白石貴久, 清水荘雄, 三村和仙, 舟窪浩, 今野豊彦

日本金属学会講演概要(CD-ROM) 164th 2019

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スパッタリング法を用いたY:HfO₂強誘電体厚膜の作製とその電気特性評価

志村礼司郎, 三村和仙, 清水荘雄, 舟窪浩

電子材料研究討論会講演予稿集 39th 2019

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直方晶相ハフニア薄膜におけるドメイン構造

木口賢紀, 白石貴久, 三村和仙, 清水荘雄, 舟窪浩, 今野豊彦

日本セラミックス協会年会講演予稿集(CD-ROM) 2019 2019

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HfO₂基薄膜の相安定性と機能発現

清水荘雄, 三村和仙, 舟窪浩

セラミックス基礎科学討論会講演要旨集 57th 2019

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Understanding of the basic properties of HfO2-based ferroelectrics using epitaxial films Invited Reviewed

Hiroshi FUNAKUBO, Takanori MIMURA, Takao SHIMIZU, Takanori KIGUCHI

OYO BUTURI 87 ( 12 ) 921 - 925 2018.12

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Characterization of piezoelectric property for orientation-controlled (K,Na)NbO₃ films prepared by hydrothermal method.

Tateyama Akinori, Ito Yoshiharu, Nakamura Yoshiko, Simizu Takao, orino Yuichiro, Kurosawa Minoru, Uchida Hiroshi, Shiraishi Takahisa, kKguchi Takanori, Konno Toyohiko, Ishikawa Mutsuo, Kumada Nobuhiro, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2018.2 1315 - 1315 2018.9

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DOI： 10.11470/jsapmeeting.2018.2.0_1315

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Preparation of (Bi, Na) TiO₃ - BaTiO₃ -based thick film by PLD method and their characterization

Hasegawa Miyu, Shimizu Takao, Sato Yusuke, Yamaoka Wakiko, Ishida Mirai, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2018.2 1302 - 1302 2018.9

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DOI： 10.11470/jsapmeeting.2018.2.0_1302

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HfO₂系強誘電体薄膜—HfO₂-based Ferroelectric Thin Films—特集セラミックス電子材料最前線2018

舟窪浩, 清水荘雄

Ceramics Japan = セラミックス : bulletin of the Ceramic Society of Japan 53 ( 4 ) 243 - 247 2018.4

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Fabrication of epitaxial CeO₂-ZrO₂ thin films and their crystal structure analysis

Shiraishi Takahisa, Choi Sujin, Takao Shimizu, Takanori Kiguchi, Hiroshi Funakubo, Toyohiko Konno

JSAP Annual Meetings Extended Abstracts 2018.1 1411 - 1411 2018.3

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DOI： 10.11470/jsapmeeting.2018.1.0_1411

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Preparation of Piezoelectric Films on Flexible Substrates by Hydrothermal Method

Funakubo Hiroshi, Ito Yoshiharu, Tateyama Akinori, Nakamura Yoshiko, Shimizu Takao, Kurosawa Minoru, Uchida Hiroshi, Shiraishi Takahisa, Kiguchi akanori, Konno Toyohiko J., Ishikawa Mutsuo

JSAP Annual Meetings Extended Abstracts 2018.1 153 - 153 2018.3

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DOI： 10.11470/jsapmeeting.2018.1.0_153

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Preparation of orientation-controlled (K,Na)NbO₃ films from various Nb source by hydrothermal method and their film properties.

Tateyama Akinori, Ito Yoshiharu, Nakamura Yoshiko, Shimizu Takao, Orino Yuichiro, Kurosawa Minoru, Uchida Hiroshi, Shiraishi Takahisa, Kiguchi Takanori, Konno Toyohiko, Ishikawa Mutsuo, Kumada Nobuhiro, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2018.1 1418 - 1418 2018.3

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DOI： 10.11470/jsapmeeting.2018.1.0_1418

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Preparation of Sr-Si film by RF magnetron sputtering method

Aoyama Kodai, Shimizu Takao, Kuramochi Hideto, Mesuda Masami, Akiike Ryo, Kimura Yoshisato, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2018.1 3055 - 3055 2018.3

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DOI： 10.11470/jsapmeeting.2018.1.0_3055

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Fabrication and evaluation of (Bi, Na) TiO₃ - BaTiO₃ based thin film by using PLD method

Hasegaw Miyu, Shimizu Takao, Sato Yussuke, Yamaoka Wakiko, Ishida Mirai, Uchida Hiroshi, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2018.1 1425 - 1425 2018.3

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DOI： 10.11470/jsapmeeting.2018.1.0_1425

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直方晶相ハフニア薄膜のドメイン構造の電子エネルギー損失分光

木口賢紀, CHOI Sujin, 白石貴久, 三村和仙, 清水荘雄, 舟窪浩, 今野豊彦

日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM) 31st 2018

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エピタキシャル成長したHfO₂基強誘電体膜における結晶構造の膜厚依存性

三村和仙, 清水荘雄, 木口賢紀, 赤間章裕, 今野豊彦, 勝矢良雄, 坂田修身, 舟窪浩

日本セラミックス協会年会講演予稿集(CD-ROM) 2018 2018

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Al置換したε-FeO₃薄膜の構造と物性

浜嵜容丞, 浜嵜容丞, 白石貴久, 赤間章裕, 木口賢紀, 清水荘雄, 安井伸太郎, 谷山智康, 伊藤満

日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM) 31st 2018

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エピタキシャルHfO₂基強誘電体における強誘電特性の膜厚依存性

三村和仙, 清水荘雄, 勝矢良雄, 坂田修身, 舟窪浩

応用物理学会春季学術講演会講演予稿集(CD-ROM) 65th 2018

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スパッタリング法によるHfO₂基強誘電体の厚膜化とその電気特性評価

志村礼司郎, 三村和仙, 清水荘雄, 舟窪浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 79th 2018

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STEM-EELS法による直方晶相ハフニア薄膜の結晶構造評価

木口賢紀, 白石貴久, 三村和仙, 清水荘雄, 舟窪浩, 今野豊彦

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 79th 2018

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網羅的ソフトモードフォノン探索によるHfO₂薄膜の強誘電性の理論計算

森分博紀, 森分博紀, 小西綾子, 小西綾子, 東後篤史, 清水荘雄, 舟窪浩

日本セラミックス協会年会講演予稿集(CD-ROM) 2018 2018

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時間分解放射光X線回折を用いた菱面体晶PZTにおける非180°ドメインスイッチングの周波数応答特性の評価

清水荘雄, 江原祥隆, 三村和仙, 安井伸太郎, 山田智明, 今井康彦, 勝矢良雄, 坂田修身, 舟窪浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 79th 2018

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HfO₂基強誘電体の相安定性と特性制御

舟窪浩, 清水荘雄, 三村和仙

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 79th 2018

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Control of p- and n-type Conduction in Thermoelectric Non-doped Mg2Si Thin Films Prepared by Sputtering Method Reviewed

Mao Kurokawa, Takao Shimizu, Mutsuo Uehara, Atsuo Katagiri, Kensuke Akiyama, Masaaki Matsushima, Hiroshi Uchida, Yoshisato Kimura, Hiroshi Funakubo

MRS Advances 3 ( 24 ) 1355 - 1359 2018

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DOI： 10.1557/adv.2018.150

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Low temperature preparation of orientation-controlled (K,Na)NbO₃ by hydrothermal method and its properties

Funakubo Hiroshi, Ito Yoshiharu, Tateyama Akinori, Nakamura Yoshiko, Shimizu Takao, Kurosawa Minoru, Uchida Hiroshi, Shiraishi Takahisa, Kiguchi Takanori, Konno Toyohiko, Ishikawa Mutsuo

JSAP Annual Meetings Extended Abstracts 2017.2 1263 - 1263 2017.8

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DOI： 10.11470/jsapmeeting.2017.2.0_1263

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Fabrication of ferroelectric HfO₂-based thin films by solid state epitaxy method

Shiraishi Takahisa, Choi Sujin, Shimizu Takao, Funakubo Hiroshi, Kiguchi Takanori, Konno Toyohiko J.

JSAP Annual Meetings Extended Abstracts 2017.2 1255 - 1255 2017.8

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DOI： 10.11470/jsapmeeting.2017.2.0_1255

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Investigation of Crystal Structure and Electrical Properties of ZrO₂-based Epitaxial Thin Films

Choi Sujin, Shiraisi Takahisa, Kiguchi Takanori, Shimizu Takao, Funakubo Hiroshi, Konno Toyohiko

JSAP Annual Meetings Extended Abstracts 2017.2 1253 - 1253 2017.8

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DOI： 10.11470/jsapmeeting.2017.2.0_1253

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Fabrication of epitaxial Fe:HfO₂ thin films and their characterization

Shiraishi Takahisa, Choi Sujin, Shimizu Takao, Funakubo Hiroshi, Kiguchi Takanori, Konno Toyohiko J.

JSAP Annual Meetings Extended Abstracts 2017.1 1301 - 1301 2017.3

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DOI： 10.11470/jsapmeeting.2017.1.0_1301

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網羅的ソフトモードフォノン探索によるHfO₂薄膜の強誘電性の理論計算

森分博紀, 東後篤史, 舟窪浩, 清水荘雄

JFCC研究成果集 2017 2017

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スパッタリング法による{100}配向Y₂O₃-HfO₂強誘電体エピタキシャル薄膜の作製とその評価

鈴木大生, 三村和仙, 清水荘雄, 内田寛, 舟窪浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th 2017

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エピタキシャルBiFeO₃薄膜における電場印加下の格子歪

中嶋誠二, 藤沢浩訓, 坂田修身, 舟窪浩, 清水莊雄, 一ノ瀬大地, 今井康彦, 清水勝

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th 2017

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網羅的ソフトモードフォノン探索によるHfO₂薄膜の強誘電性の理論計算

森分博紀, 森分博紀, 小西綾子, 小西綾子, 東後篤史, 清水荘雄, 舟窪浩

日本物理学会講演概要集(CD-ROM) 72 ( 2 ) 2017

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ferroelectricity in wurtzite-structured ZnO thin films

Moriwake Hiroki, Konishi Ayako, Ogawa Takafumi, Fisher Craig, Kuwabara Akihide, Shimizu Takao, Yasui Shintaro, Itoh Mitsuru

Meeting Abstracts of the Physical Society of Japan 72 ( 0 ) 2668 - 2668 2017

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<p>ウルツ鉱型結晶構造ZnO薄膜の強誘電性について第一原理計算により検討した結果を報告する．</p>

DOI： 10.11316/jpsgaiyo.72.1.0_2668

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Y₂O₃-HfO₂エピタキシャル薄膜の構成相の決定因子

鈴木大生, 三村和仙, 清水荘雄, 内田寛, 舟窪浩, 舟窪浩

セラミックス基礎科学討論会講演要旨集 55th 2017

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HfO₂基強誘電体のドメイン構造と電場誘起スイッチング

清水荘雄, 三村和仙, 木口賢紀, 白石貴久, 赤間章裕, 今野豊彦, 坂田修身, 勝矢良雄, 舟窪浩

エレクトロセラミックス研究討論会講演予稿集 37th 2017

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スパッタリング法によるY₂O₃-HfO₂強誘電体エピタキシャル薄膜作製とその評価

鈴木大生, 三村和仙, 清水荘雄, 内田寛, 舟窪浩

応用物理学会春季学術講演会講演予稿集(CD-ROM) 64th 2017

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電界印加下における正方晶Pb(Zr,Ti)O₃膜の結晶構造の時間応答

佐藤智也, 一ノ瀬大地, 三村和仙, 根本祐一, 清水荘雄, 今井康彦, 内田寛, 坂田修身, 舟窪浩

応用物理学会春季学術講演会講演予稿集(CD-ROM) 64th 2017

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走査型非線形誘電率顕微鏡を用いたナノスケール分極反転過程の動的観察

平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄

応用物理学会春季学術講演会講演予稿集(CD-ROM) 64th 2017

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エピタキシャルHfO₂基膜における強誘電相の安定性-RE₂O₃-HfO₂vs ZrO₂-HfO₂-

三村和仙, 片山きりは, 清水荘雄, 木口賢紀, 赤間章裕, 今野豊彦, 坂田修身, 舟窪浩

応用物理学会春季学術講演会講演予稿集(CD-ROM) 64th 2017

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エピタキシャルPZT膜におけるマルチドメイン構造と面内歪の緩和

佐藤智也, 一ノ瀬大地, 三村和仙, 清水荘雄, 山田智明, 舟窪浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th 2017

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強誘電性HfO₂薄膜におけるナノスケール分極反転ドット書き込み

平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th 2017

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Y添加HfO₂エピタキシャル薄膜における負の電気熱量効果

松尾翔吾, 山田智明, 三村和仙, 清水荘雄, 舟窪浩, 吉野正人, 長崎正雅

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th 2017

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Y₂O₃-HfO₂強誘電体の温度安定性

三村和仙, 清水荘雄, 木口賢紀, 赤間章裕, 今野豊彦, 勝矢良雄, 坂田修身, 舟窪浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th 2017

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(111)正方晶PbZr_0.35Ti_0.65O₃ナノロッドのサイズ制御による圧電特性の増大

岡本一輝, 山田智明, 山田智明, 坂田修身, 坂田修身, 清水荘雄, 舟窪浩, 吉野正人, 長崎正雄

エレクトロセラミックス研究討論会講演予稿集 37th 2017

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Y添加HfO₂薄膜における強誘電ドメイン反転のSNDM観察 (磁気記録・情報ストレージ)

平永良臣, 長康雄, 三村和仙, 清水荘雄, 舟窪浩

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 116 ( 348 ) 35 - 39 2016.12

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Y添加HfO₂薄膜における強誘電ドメイン反転のSNDM観察 (マルチメディアストレージ)

平永良臣, 長康雄, 三村和仙, 清水荘雄, 舟窪浩

映像情報メディア学会技術報告 = ITE technical report 40 ( 44 ) 35 - 39 2016.12

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東工大と東北大など、酸化ハフニウム基強誘電体の基礎特性を解明酸化ハフニウム基強誘電体の基礎特性を解明 ―超高密度で高速動作する不揮発性メモリー実現に道―

清水荘雄, 舟窪浩, 今野豊彦, 木口賢紀, 坂田修身

日経プレスリリース 2016.9

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Growth of orientation controlled epitaxial (Bi_,K)TiO₃ films by pulse laser deposition.

Nemoto Yuichi, Ichinose Daichi, Shimizu Takao, Uchida Hiroshi, Sato Yusuke, Yamaoka Wakiko, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2016.2 1232 - 1232 2016.9

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DOI： 10.11470/jsapmeeting.2016.2.0_1232

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Annealing effects on conduction type in Mg₂Si thin films

Kurokawa Mao, Uehara Mutsuo, Shimizu Takao, Akiyama Kensuke, Matsushima Masaaki, Uchida Hiroshi, Kimura Yoshisato, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2016.2 2658 - 2658 2016.9

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DOI： 10.11470/jsapmeeting.2016.2.0_2658

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依頼講演 HfO₂基強誘電体薄膜の作製と特性評価 (シリコン材料・デバイス)

舟窪浩, 清水荘雄, 片山きりは, 三村和仙

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 116 ( 118 ) 5 - 8 2016.6

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強誘電性Y:HfO₂薄膜におけるナノスケールドメイン反転 (磁気記録・情報ストレージ)

陳舟, 平永良臣, 清水荘雄, 片山きりは, 三村和仙, 舟窪浩, 長康雄

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 115 ( 490 ) 29 - 32 2016.3

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Pulse laser growth of tetragonal (Bi_,K)TiO₃ epitaxial films and their piezoelectric properties

Nemoto yuichi, Ichinose Daichi, Shimizu Takao, Uchida Hiroshi, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2016.1 1227 - 1227 2016.3

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DOI： 10.11470/jsapmeeting.2016.1.0_1227

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Effect of strain on thermoelectric property in Mg₂Si thin film

Kurokawa Mao, Uehara Mutsuo, Ichinose Daichi, Shimizu Takao, Akiyama Kensuke, Matsushima Masaaki, Uchida Hiroshi, Kimura Yoshisato, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2016.1 1927 - 1927 2016.3

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DOI： 10.11470/jsapmeeting.2016.1.0_1927

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強誘電性Y:HfO₂薄膜におけるナノスケールドメイン反転 (マルチメディアストレージ)

陳舟, 平永良臣, 清水荘雄, 片山きりは, 三村和仙, 舟窪浩, 長康雄

映像情報メディア学会技術報告 = ITE technical report 40 ( 7 ) 29 - 32 2016.3

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正方晶Pb(Zr,Ti)O₃薄膜ドメイン構造の配向及び歪み制御

一ノ瀬大地, 中島崇明, 江原祥隆, 江原祥隆, 及川貴弘, 清水荘雄, 坂田修身, 坂田修身, 山田智明, 山田智明, 舟窪浩

エレクトロセラミックス研究討論会講演予稿集 36th 2016

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HfO₂薄膜における強誘電相転移に関する第一原理計算

森分博紀, 小西綾子, 桑原彰秀, 東後篤史, 清水荘雄, 舟窪浩

日本セラミックス協会年会講演予稿集(CD-ROM) 2016 2016

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κ-Al₂O₃型酸化物薄膜の分極反転と強誘電性(II)

浜嵜容丞, 安井伸太郎, 谷山智康, 伊藤満, 清水荘雄, 小西綾子, 森分博紀, 白石貴久, 赤間章裕, 木口賢紀

日本セラミックス協会年会講演予稿集(CD-ROM) 2016 2016

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κ-Al₂O₃型酸化物薄膜の分極反転と強誘電性(I)

浜嵜容丞, 安井伸太郎, 谷山智康, 伊藤満, 清水荘雄, 小西綾子, 森分博紀, 白石貴久, 赤間章裕, 木口賢紀

日本セラミックス協会年会講演予稿集(CD-ROM) 2016 2016

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κ-Al₂O₃型Me_xFe_2-xO₃エピタキシャル薄膜の構造と強誘電性(I)

浜嵜容丞, 安井伸太郎, 谷山智康, 清水荘雄, 小西綾子, 森分博紀, 白石貴久, 赤間章裕, 木口賢紀, 伊藤満

応用物理学会春季学術講演会講演予稿集(CD-ROM) 63rd 2016

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電界印加による面内分極軸優先配向Pb(Zr,Ti)O₃薄膜のドメイン構造変化

一ノ瀬大地, 江原祥隆, 清水荘雄, 坂田修身, 坂田修身, 坂田修身, 山田智明, 山田智明, 舟窪浩

応用物理学会春季学術講演会講演予稿集(CD-ROM) 63rd 2016

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面内分極軸優先配向Pb(Zr,Ti)O₃薄膜のドメイン構造

一ノ瀬大地, 江原祥隆, 清水荘雄, 坂田修身, 坂田修身, 坂田修身, 山田智明, 山田智明, GRUVERMAN Alexei, 舟窪浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 77th 2016

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ScFeO₃アイソマー

濱嵜容丞, 清水荘雄, 安井伸太郎, 谷山智康, 伊藤満

日本化学会春季年会講演予稿集(CD-ROM) 96th 2016

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配向制御したHfO₂基強誘電体の作製とその強誘電特性評価

舟窪浩, 清水荘雄, 片山きりは, 三村和仙, 木口賢紀, 赤間章裕, 今野豊彦, 内田寛

日本セラミックス協会年会講演予稿集(CD-ROM) 2016 2016

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エピタキシャルおよび配向性YドープHfO₂薄膜の強誘電性

清水荘雄, 片山きりは, 三村和仙, 木口賢紀, 白石貴久, 赤間章裕, 今野豊彦, 坂田修身, 舟窪浩

日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM) 29th 2016

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固相成長法を用いた強誘電体HfO₂基薄膜のエピタキシャル成長と特性評価:

三村和仙, 片山きりは, 清水荘雄, 内田寛, 木口賢紀, 赤間章裕, 今野豊彦, 舟窪浩

セラミックス基礎科学討論会講演要旨集 54th 2016

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走査型非線形誘電率顕微鏡における強誘電性Y:HfO₂薄膜のドメイン反転

CHEN Zhou, 平永良臣, 清水荘雄, 片山きりは, 三村和仙, 舟窪浩, 長康雄

応用物理学会春季学術講演会講演予稿集(CD-ROM) 63rd 2016

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固相成長による配向制御したHfO₂基強誘電体薄膜の作製と特性評価

三村和仙, 片山きりは, 清水荘雄, 内田寛, 木口賢紀, 赤間章裕, 今野豊彦, 坂田修身, 舟窪浩, 舟窪浩

応用物理学会春季学術講演会講演予稿集(CD-ROM) 63rd 2016

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電界印加によるYO_1.5-HfO₂基薄膜の結晶構造変化

清水荘雄, 三村和仙, 片山きりは, 木口賢紀, 赤間章裕, 今野豊彦, 坂田修身, 舟窪浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 77th 2016

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HfO₂基強誘電体の結晶構造と特性の熱処理温度依存性

三村和仙, 清水荘雄, 内田寛, 木口賢紀, 赤間章裕, 今野豊彦, 坂田修身, 舟窪浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 77th 2016

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κ-Al₂O₃型Me_xFe_2-xO₃エピタィシャル薄膜の構造と強誘電性(II)

浜嵜容丞, 安井伸太郎, 谷山智康, 清水荘雄, 小西綾子, 森分博紀, 白石貴久, 赤間章裕, 木口賢紀, 伊藤満

応用物理学会春季学術講演会講演予稿集(CD-ROM) 63rd 2016

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Raman Tensor Analysis by Angle-Resolved Polarized Spectroscopy

Yasuhiro FUJII, Takao SHIMIZU, Hiroki TANIGUCHI, Akitoshi KOREEDA

Journal of the Crystallographic Society of Japan 57 ( 5 ) 285-290 - 290 2015.10

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Phonon properties of lead titanate were investigated by measuring polarization-direction dependence of Raman intensities. Quantitative angle-resolved Raman spectroscopy is advantageous for detecting anisotropic nature of the sample material since that reflects the symmetry of vibrational modes. In this study, a broadband half-waveplate was utilized to establish high quantitativity, stability, and spatial reliability of the angle-resolved measurement.

DOI： 10.5940/jcrsj.57.285

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東工大と東北大、薄膜でも特性劣化しない強誘電体エピタキシャル膜を作製

清水荘雄, 舟窪浩, 今野豊彦, 木口賢紀

日刊工業新聞 2015.7

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Crystallographic analysis of epitaxial HfO₂-based films containing orthorhombic phase

Katayama Kiliha, Shimizu Takao, Yokouchi Tatsuhiko, Shiraishi Takahisa, Oikawa Takahiro, Kiguchi Takanori, Akama Akihiro, Konno Toyohiko, Uchida Hiroshi, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2015.1 1187 - 1187 2015.2

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DOI： 10.11470/jsapmeeting.2015.1.0_1187

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Fabrication and evaluation of HfO₂-ZrO₂ ultrathin films by chemical solution deposition

Abe Chihoko, Shiokawa Marina, Shiraishi Takahisa, Shimizu Takao, Funakubo Hiroshi, Uchida Hiroshi

JSAP Annual Meetings Extended Abstracts 2015.1 1186 - 1186 2015.2

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DOI： 10.11470/jsapmeeting.2015.1.0_1186

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Ferroelectricity in HfO₂-based epitaxial thin film

Shimizu Takao, Katayama Kiliha, Hiroshi Funakubo

JSAP Annual Meetings Extended Abstracts 2015.1 107 - 107 2015.2

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DOI： 10.11470/jsapmeeting.2015.1.0_107

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PZT膜における温度によるドメイン構造転移

舟窪浩, 舟窪浩, 一ノ瀬大地, 中島崇明, 江原祥隆, 及川貴弘, 清水荘雄, 山田智明, 山田智明

エレクトロセラミックス研究討論会講演予稿集 35th 2015

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バッファー層の挿入によるマグネタイト薄膜の欠陥制御

寺口健斗, 清水荘雄, 浜嵜容丞, 安井伸太郎, 谷山智康, 伊藤満

セラミックス基礎科学討論会講演要旨集 53rd 2015

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極性構造を有するGaFeO₃型Al_xFe_2-xO₃固溶体薄膜の作製と物性評価

浜嵜容丞, 清水荘雄, 安井伸太郎, 谷山智康, 伊藤満

日本セラミックス協会年会講演予稿集(CD-ROM) 2015 2015

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KTaO₃基板上Pb(Zr,Ti)O₃薄膜のZr/(Zr+Ti)比による分極軸制御

一ノ瀬大地, 中島崇明, 江原祥隆, 及川貴弘, 清水荘雄, 山田智明, 山田智明, 舟窪浩

セラミックス基礎科学討論会講演要旨集 53rd 2015

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a軸優先配向エピタキシャルPbTiO₃膜の特性

中島崇明, 一ノ瀬大地, 江原祥隆, 清水荘雄, 小林健, 飯島高志, 山田智明, 山田智明, 舟窪浩

セラミックス基礎科学討論会講演要旨集 53rd 2015

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Zr/(Zr+Ti)比によるPb(Zr,Ti)O₃薄膜のドメイン制御

一ノ瀬大地, 中島祟明, 江原祥隆, 及川貴弘, 清水荘雄, 山田智明, 山田智明, 舟窪浩

応用物理学会春季学術講演会講演予稿集(CD-ROM) 62nd 2015

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XRD測定による(100)/(001)配向正方晶Pb(Zr,Ti)O₃膜の電界印加下の結晶構造変化の定量分析

大島直也, 清水荘雄, 中島光雅, 江原祥隆, 及川貴弘, 内田寛, 舟窪浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 76th 2015

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正方晶Pb(Zr,Ti)O₃薄膜におけるZr/(Zr+Ti)比のドメイン構造への影響

一ノ瀬大地, 中島祟明, 江原祥隆, 清水荘雄, 坂田修身, 坂田修身, 坂田修身, 山田智明, 山田智明, 舟窪浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 76th 2015

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(100)/(001)配向エピタキシャルPbTiO₃膜におけるドメイン構造に及ぼす温度と格子歪みの影響

中島崇明, 一ノ瀬大地, 江原祥隆, 中島光雅, 清水荘雄, 小林健, 飯島高志, 山田智明, 山田智明, 舟窪浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 76th 2015

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Analysis of Electrical Properties and Crystal Structure for (Hf,Zr)O2 Thin Films

Shiraishi Takahisa, Katayama Kiliha, Yokouchi Tatsuhiko, Shimizu Takao, Oikawa Takahiro, Uchida Hiroshi, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2014.2 3923 - 3923 2014.9

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DOI： 10.11470/jsapmeeting.2014.2.0_3923

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Fabrication and Characterization of Orthorhombic Epitaxial HfO₂-based Thin Films

Shimizu Takao, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2014.2 3922 - 3922 2014.9

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DOI： 10.11470/jsapmeeting.2014.2.0_3922

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First-Principles Calculations of Ferroelectricity in Wurtzite-Structured Simple Chalcogenides

KONISHI Ayako, MORIWAKE Hiroki, OGAWA Takafumi, FUJIMURA Koji, FISHER Craig A. J, KUWABATA Akihide, SHIMIZU Takao, YASUI Shintaro, ITOH Mitsuru

AMTC Lett 4 102 - 103 2014.5

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Ferroelectric property of Hf_0.5Zr_0.5)O₂

Yokouchi Tatsuhiko, Shimizu Takao, Oikawa Takahiro, Shiraishi Takahisa, Funakubo Hiroshi, Kiguchi Takanori, Akama Akihiro, Toyohiko J. Konno, Kim Dong Jik, Gruverman Alexei

JSAP Annual Meetings Extended Abstracts 2014.1 1179 - 1179 2014.3

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DOI： 10.11470/jsapmeeting.2014.1.0_1179

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Ferroelectricity of HfO₂-based films

Funakubo Hiroshi, Shimizu Takao, Yokouchi Tatsuhiko, Oikawa Takahiro, Shiraishi Takahisa

JSAP Annual Meetings Extended Abstracts 2014.1 134 - 134 2014.3

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DOI： 10.11470/jsapmeeting.2014.1.0_134

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六方晶チタン酸バリウム単結晶の熱電特性

安井伸太郎, 石本雄介, 清水荘雄, 谷山智康, 伊藤満

日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM) 27th 2014

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PLD法を用いて作製した準安定相In_xFe_2-xO₃薄膜の結晶構造制御

浜嵜容丞, 清水荘雄, 安井伸太郎, 谷山智康, 伊藤満

日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM) 27th 2014

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GaFeO₃型Al_xFe_2-xO₃薄膜の作製と磁気特性

浜嵜容丞, 清水荘雄, 安井伸太郎, 谷山智康, 伊藤満

日本セラミックス協会年会講演予稿集(CD-ROM) 2014 2014

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ZnGa₂O₄をバッファー層に用いたマグネタイト薄膜の作製

寺口健斗, 清水荘雄, 浜嵜容丞, 安井伸太郎, 谷山智康, 伊藤満

セラミックス基礎科学討論会講演要旨集 52nd 2014

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エピタキシャルAl_2-xFe_xO₃薄膜の強誘電性と磁性

浜嵜容丞, 清水荘雄, 安井伸太郎, 谷山智康, 伊藤満

日本物理学会講演概要集 69 ( 1 ) 2014

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低次元酸素八面体構造を有するシリケート誘電体における誘電特性の高温安定性

木村純一, 谷口博基, 飯島高志, 清水荘雄, 安井伸太郎, 伊藤満, 舟窪浩

日本セラミックス協会年会講演予稿集(CD-ROM) 2014 2014

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熱電材料のための六方晶チタン酸バリウム単結晶の育成とその特性評価

安井伸太郎, 石本雄介, 清水荘雄, 谷山智康, 伊藤満

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 75th 2014

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ウルツァイト型結晶構造単純カルコゲナイドの強誘電性

小西綾子, 森分博紀, 小川貴史, 藤村幸司, FISHER Craig A.J., 桑原彰秀, 清水荘雄, 安井伸太郎, 伊藤満

日本セラミックス協会年会講演予稿集(CD-ROM) 2014 2014

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面内分極PbTiO₃エピタキシャル膜におけるドメイン構造の膜厚依存性

中島崇明, 江原祥隆, 清水荘雄, 舟窪浩

セラミックス基礎科学討論会講演要旨集 52nd 2014

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エピタキシャル歪みによるPbTiO₃膜のキュリー温度制御

中島崇明, 江原祥隆, 清水荘雄, 小林建, 舟窪浩

応用物理学会春季学術講演会講演予稿集(CD-ROM) 61st 2014

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{100}配向エピタキシャルPbTiO₃膜におけるドメイン構造転移

中島崇明, 一ノ瀬大地, 江原祥隆, 清水荘雄, 小林健, 山田智明, 山田智明, 舟窪浩

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 75th 2014

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第一原理計算によるウルツァイト型結晶構造の強誘電性解析

森分博紀, 小西綾子, 清水荘雄, 安井伸太郎, 伊藤満

JFCC研究成果集 2014 11 2014

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28aAM-1 Piezoresponse behavior of epitaxial films under ferroelectric-antiferroelectric phase boundary

Yasui S, Takeuchi Ichiro, Ehara Y, Shiraishi T, Shimizu T, Funakubo H, Imai Y, Tajiri H, Sakata O, Itoh M

Meeting Abstracts of the Physical Society of Japan 69 ( 0 ) 2014

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27pPSA-15 Ferroelectric and magnetic properties of epitaxial Al_<2-x>Fe_xO_3 thin films

Hamasaki Y, Shimizu T, Yasui S, Taniyama T, Itoh M

Meeting Abstracts of the Physical Society of Japan 69 ( 0 ) 918 - 918 2014

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30aAM-9 First-principles Calculations of Ferroelectricity in Wurtzite Structured Simple Chalcogenides

Moriwake Hiroki, Konishi Ayako, Ogawa Takafumi, Fujimura Koji, Fisher Craig A. J, Kuwabara Akihide, Shimizu Takao, Yasui Shintaro, Itoh Mitsuru

Meeting Abstracts of the Physical Society of Japan 69 ( 0 ) 948 - 948 2014

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導電性六方晶BaTiO₃の合成と熱電特性評価

石本雄介, 清水荘雄, 安井伸太郎, 谷山智康, 伊藤満

セラミックス基礎科学討論会講演要旨集 52nd 2014

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Orientation Dependencies of Dielectric Properties of Bismuth Layer Structured Dielectrics and Their Capacitor Application for High Temperature Use

FUNAKUBO Hiroshi, KIMURA Junichi, SHIMIZU Takao, MATSUSHIMA Masaaki, YASUI Shintaro, UCHIDA Hiroshi, YAMADA Tomoaki

Journal of the Society of Inorganic Materials, Japan : セッコウ・石灰・セメント・地球環境の科学 20 ( 367 ) 403 - 407 2013.11

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異なる面方位を持つSrTiO₃基板上に成長したBaTiO₃薄膜における相転移

清水荘雄, 諏訪間大, 谷口博基, 谷山智康, 舟窪浩, 伊藤満

応用物理学会学術講演会講演予稿集 2013.2 2094 - 2094 2013.8

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DOI： 10.11470/jsapmeeting.2013.2.0_2094

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化学溶液堆積法によって作製した(111)配向Ba-Biペロブスカイト固溶体薄膜の誘電特性

木村純一, 清水荘雄, 内田寛, 舟窪浩

応用物理学会学術講演会講演予稿集 2013.2 2096 - 2096 2013.8

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DOI： 10.11470/jsapmeeting.2013.2.0_2096

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26aPS-114 Electric field effect on magnetic properties of Fe/BaTiO_3 thin films heterostructures

Muraoka H., Hamasaki Y., Shirahata Y., Shimizu T., Itoh M., Taniyama T.

Meeting Abstracts of the Physical Society of Japan 68 ( 0 ) 524 - 524 2013

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Language：Japanese Publisher：The Physical Society of Japan

DOI： 10.11316/jpsgaiyo.68.1.3.0_524_4

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Raman tensor analysis of single crystalline bismuth tungstate by quantitative polarized Raman spectroscopy

Fujii Y., Noju M., Shimizu T., Taniguchi H., Itoh M., Nishio I.

Meeting Abstracts of the Physical Society of Japan 68 ( 0 ) 864 - 864 2013

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Language：Japanese Publisher：The Physical Society of Japan

DOI： 10.11316/jpsgaiyo.68.2.4.0_864_4

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26aPS-144 Raman tensor analysis of single crystalline sample by quantitative polarized Raman spectroscopy

Fujii Y., Noju M., Shimizu T., Taniguchi H., Itoh M., Nishio I.

Meeting Abstracts of the Physical Society of Japan 68 ( 0 ) 1020 - 1020 2013

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DOI： 10.11316/jpsgaiyo.68.1.4.0_1020_2

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CaTiSiO₅基セラミックスの合成と誘電特性評価

木村純一, 谷口博基, 谷口博基, 清水荘雄, 安井伸太郎, 伊藤満, 舟窪浩

日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM) 26th 2013

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強誘電体-反強誘電体相境界を有する(Bi,Sm)FeO₃エピタキシャル薄膜の電界印加時における圧電挙動の観察

安井伸太郎, 安井伸太郎, 江原祥隆, 白石貴久, 清水荘雄, 舟窪浩, 伊藤満, 今井康彦, 田尻寛男, 坂田修身, TAKEUCHI Ichiro

日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM) 26th 2013

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強誘電体-反強誘電体相境界を有する(Bi,Sm)FeO₃エピタキシャル薄膜の電界印加時における圧電挙動の観察

安井伸太郎, 安井伸太郎, 江原祥隆, 白石貴久, 清水荘雄, 舟窪浩, 伊藤満, 今井康彦, 田尻寛男, 坂田修身, 坂田修身, TAKEUCHI Ichiro

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 74th 2013

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Unconventional Structure in BaTiO₃ Thin Film Grown on （110）SrTiO₃ Substrate

SHIMIZU Takao, TANIGUCHI Hiroki, TANIYAMA Tomoyasu, ITOH Mitsuru

Nihon Kessho Gakkaishi 55 ( 5 ) 290 - 295 2013

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Language：Japanese Publisher：The Crystallographic Society of Japan

An unconventional pseudo-tetragonal crystal structure is found in a BaTiO₃ epitaxial thin film grown on a （110）SrTiO₃ substrate. The unique crystal structure of the BaTiO₃ film, which is markedly different from the bulk tetragonal structure, is caused by the nearly uniaxial strain due to the different strain relaxation along ［001］ and ［1<span style="text-decoration: overline;">1</span>0］ axes.

DOI： 10.5940/jcrsj.55.290

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25aPS-10 Quantitative Raman spectroscopy utilizing a broadband waveplate

Fujii Y., Noju M., Shimizu T., Taniguchi H., Itoh M., Nishio I.

Meeting Abstracts of the Physical Society of Japan 67 ( 0 ) 997 - 997 2012

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DOI： 10.11316/jpsgaiyo.67.1.4.0_997_4

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25aPS-9 Quantitative polarized Raman spectroscopic study on Bi_2WO_6

Noju M., Fujii Y., Shimizu T., Taniguchi H., Fu D., Itoh M., Nishio I.

Meeting Abstracts of the Physical Society of Japan 67 ( 0 ) 997 - 997 2012

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DOI： 10.11316/jpsgaiyo.67.1.4.0_997_3

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21pGN-5 Ca substitution effect on ferroelectricity of CdTiO_3

Taniguchi Hiroki, Soon, Moriwake Hiroki, Shan Yue Jin, Shimizu Takao, Itoh Mitsuru

Meeting Abstracts of the Physical Society of Japan 66 ( 0 ) 974 - 974 2011

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DOI： 10.11316/jpsgaiyo.66.2.4.0_974_4

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ラマン散乱によるCdTiO₃におけるCa置換効果の研究

谷口博基, SOON Hwee Ping, 清水荘雄, 伊藤満, 森分博紀, SHAN Yue Jin

日本セラミックス協会秋季シンポジウム講演予稿集 24th 2011

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26aPS-113 Mechanism of structural phase transition in Ba_<1-x>Ca_xTiO_3

SHIMIZU Takao, FU Desheng, TANIGUCHI Hiroki, TANIYAMA Tomoyasu, ITOH Mitsuru

Meeting Abstracts of the Physical Society of Japan 66 ( 0 ) 969 - 969 2011

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DOI： 10.11316/jpsgaiyo.66.1.4.0_969_4

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26aPS-117 Polarized Raman spectra of ferroelectric oxide single crystals.

Fujii Y., Noju M., Nishio I., Shimizu T., Taniguchi H., Itoh M.

Meeting Abstracts of the Physical Society of Japan 66 ( 0 ) 970 - 970 2011

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DOI： 10.11316/jpsgaiyo.66.1.4.0_970_4

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26aPS-122 Study on microstructures in (Ba, Ca)TiO_3 by transmission electron microscopy

Koyama Tsukasa, Ozaki Tomoatu, Mori Shigeo, Fu Desheng, SHimizu Takao, Taniguchi Hiroki, Itoh Mitsuru

Meeting Abstracts of the Physical Society of Japan 66 ( 0 ) 972 - 972 2011

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DOI： 10.11316/jpsgaiyo.66.1.4.0_972_1

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25aWY-6 Raman scattering study on structural phase transition in Ba_<1-x>Ca_xTiO_3

SHIMIZU Takao, FU Desheng, TANIGUCHI Hiroki, TANIYAMA Tomoyasu, ITOH Mitsuru

Meeting Abstracts of the Physical Society of Japan 65 ( 0 ) 916 - 916 2010

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DOI： 10.11316/jpsgaiyo.65.2.4.0_916_1

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24aPS-130 Microstructures in(Ba,Ca)TiO_3 by transmission electron microscopy

Koyama Tsukasa, Ozaki Tomoatu, Mori Shigeo, Fu Desheng, Shimizu Takao, Taniguchi Hiroki, Itoh Mitsuru

Meeting Abstracts of the Physical Society of Japan 65 ( 0 ) 902 - 902 2010

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DOI： 10.11316/jpsgaiyo.65.2.4.0_902_2

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27pPSB-14 Phonon dynamics in Ba_<0.767>Ca_<0.233>TiO_3

SHIMIZU Takao, FU Desheng, TANIGUCHI Hiroki, TANIYAMA Tomoyasu, ITOH Mitsuru

Meeting Abstracts of the Physical Society of Japan 64 ( 0 ) 886 - 886 2009

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DOI： 10.11316/jpsgaiyo.64.2.4.0_886_3

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30pRF-4 Raman scattering study on the structural phase transitions in Perovskite-type ferroelectric oxides

Taniguchi H., Soon Hwee Ping, Shimizu T., Fujii Y., Tachibana M., Fu D., Itoh M.

Meeting Abstracts of the Physical Society of Japan 64 ( 0 ) 984 - 984 2009

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DOI： 10.11316/jpsgaiyo.64.1.4.0_984_3

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27pPSB-11 Soft Mode Dynamics in Pb(Mg_<1/3>Nb_<2/3>)O_3

TANIGUCHI Hiroki, SHMIZU Takao, FU Desheng, ITOH Mitsuru

Meeting Abstracts of the Physical Society of Japan 64 ( 0 ) 885 - 885 2009

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DOI： 10.11316/jpsgaiyo.64.2.4.0_885_4

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21pVE-2 Powder Neutron Diffraction Study on (K_<1-x>Rb_x)_3H(SeO_4)_2

Shikanai F., Kamiyama T., Kiyanagi R., Taniguchi H., Shimizu T., Richardson J. W. Jr.J. W. Jr., Kano J., Kojima S., Itoh S., Ikeda S.

Meeting Abstracts of the Physical Society of Japan 63 ( 0 ) 877 - 877 2008

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DOI： 10.11316/jpsgaiyo.63.2.4.0_877_3

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25pYE-1 Soft Mode and Phase Transition in Pyrochlore-type Ferroelectric Cd_2Nb_2O_7

Taniguchi H., Shimizu T., Tachibana M., Kawaji H., Atake T., Itoh M.

Meeting Abstracts of the Physical Society of Japan 63 ( 0 ) 944 - 944 2008

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DOI： 10.11316/jpsgaiyo.63.1.4.0_944_2

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Ferroelectric Phase Transition of Cd_2_Nb_2_O_7_ Studied by Raman Scattering

Hiroki Taniguchi, Takao Shimizu, Hitoshi Kawaji, Tooru Atake, Mitsuru Itoh, Makoto Tachibana

Physical Review B 77 ( 22 ) 224104 2008

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DOI： 10.1103/PhysRevB.77.224104

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20aXA-9 Ferroelectric-based new diluted magnetic single crystal Fe-doped cubic (Ba,Ca)TiO_3

Shimizu T., Fu D., Ray Sugata, Taniguchi H., Taniyama T., Koahihara S., Matsuo Y., Itoh M.

Meeting Abstracts of the Physical Society of Japan 62 ( 0 ) 965 - 965 2007

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DOI： 10.11316/jpsgaiyo.62.1.4.0_965_1

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Presentations

Preparation of orientation-controlled (K,Na)NbO₃ films from various Nb source by hydrothermal method and their film properties.

Tateyama Akinori, Ito Yoshiharu, Nakamura Yoshiko, Shimizu Takao, Orino Yuichiro, Kurosawa Minoru, Uchida Hiroshi, Shiraishi Takahisa, Kiguchi Takanori, Konno Toyohiko, Ishikawa Mutsuo, Kumada Nobuhiro, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2018.3 The Japan Society of Applied Physics

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Fabrication of epitaxial CeO₂-ZrO₂ thin films and their crystal structure analysis

Shiraishi Takahisa, Choi Sujin, Takao Shimizu, Takanori Kiguchi, Hiroshi Funakubo, Toyohiko Konno

JSAP Annual Meetings Extended Abstracts 2018.3 The Japan Society of Applied Physics

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Preparation of Sr-Si film by RF magnetron sputtering method

Aoyama Kodai, Shimizu Takao, Kuramochi Hideto, Mesuda Masami, Akiike Ryo, Kimura Yoshisato, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2018.3 The Japan Society of Applied Physics

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Fabrication and evaluation of (Bi, Na) TiO₃ - BaTiO₃ based thin film by using PLD method

Hasegaw Miyu, Shimizu Takao, Sato Yussuke, Yamaoka Wakiko, Ishida Mirai, Uchida Hiroshi, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2018.3 The Japan Society of Applied Physics

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Preparation of Piezoelectric Films on Flexible Substrates by Hydrothermal Method

Funakubo Hiroshi, Ito Yoshiharu, Tateyama Akinori, Nakamura Yoshiko, Shimizu Takao, Kurosawa Minoru, Uchida Hiroshi, Shiraishi Takahisa, Kiguchi akanori, Konno Toyohiko J., Ishikawa Mutsuo

JSAP Annual Meetings Extended Abstracts 2018.3 The Japan Society of Applied Physics

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Low temperature preparation of orientation-controlled (K,Na)NbO₃ by hydrothermal method and its properties

Funakubo Hiroshi, Ito Yoshiharu, Tateyama Akinori, Nakamura Yoshiko, Shimizu Takao, Kurosawa Minoru, Uchida Hiroshi, Shiraishi Takahisa, Kiguchi Takanori, Konno Toyohiko, Ishikawa Mutsuo

JSAP Annual Meetings Extended Abstracts 2017.8 The Japan Society of Applied Physics

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Event date： 2017.8

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Fabrication of ferroelectric HfO₂-based thin films by solid state epitaxy method

Shiraishi Takahisa, Choi Sujin, Shimizu Takao, Funakubo Hiroshi, Kiguchi Takanori, Konno Toyohiko J.

JSAP Annual Meetings Extended Abstracts 2017.8 The Japan Society of Applied Physics

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Investigation of Crystal Structure and Electrical Properties of ZrO₂-based Epitaxial Thin Films

Choi Sujin, Shiraisi Takahisa, Kiguchi Takanori, Shimizu Takao, Funakubo Hiroshi, Konno Toyohiko

JSAP Annual Meetings Extended Abstracts 2017.8 The Japan Society of Applied Physics

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Fabrication of epitaxial Fe:HfO₂ thin films and their characterization

Shiraishi Takahisa, Choi Sujin, Shimizu Takao, Funakubo Hiroshi, Kiguchi Takanori, Konno Toyohiko J.

JSAP Annual Meetings Extended Abstracts 2017.3 The Japan Society of Applied Physics

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Event date： 2017.3

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Growth of orientation controlled epitaxial (Bi_,K)TiO₃ films by pulse laser deposition.

Nemoto Yuichi, Ichinose Daichi, Shimizu Takao, Uchida Hiroshi, Sato Yusuke, Yamaoka Wakiko, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2016.9 The Japan Society of Applied Physics

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Event date： 2016.9

Language：Japanese

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Annealing effects on conduction type in Mg₂Si thin films

Kurokawa Mao, Uehara Mutsuo, Shimizu Takao, Akiyama Kensuke, Matsushima Masaaki, Uchida Hiroshi, Kimura Yoshisato, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2016.9 The Japan Society of Applied Physics

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Layer thickness dependences of piezoelectric response in tetragonal/rhombohedral Pb(Zr_xTi_1-x)O₃ artificial superlattice thin films

Yamada Tomoaki, Ebihara Youhei, Sakata Osami, Morioka Hitoshi, Kiguchi Takanori, Shimizu Takao, Funakubo Hiroshi, Yoshino Masahito, Nagasaki Takanori

JSAP Annual Meetings Extended Abstracts 2016.3 The Japan Society of Applied Physics

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Pulse laser growth of tetragonal (Bi_,K)TiO₃ epitaxial films and their piezoelectric properties

Nemoto yuichi, Ichinose Daichi, Shimizu Takao, Uchida Hiroshi, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2016.3 The Japan Society of Applied Physics

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Effect of strain on thermoelectric property in Mg₂Si thin film

Kurokawa Mao, Uehara Mutsuo, Ichinose Daichi, Shimizu Takao, Akiyama Kensuke, Matsushima Masaaki, Uchida Hiroshi, Kimura Yoshisato, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2016.3 The Japan Society of Applied Physics

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Domain structure in {100}- and {111}-oriented Pb(Zr,Ti)O₃ nanorods and its size dependence

Yamada Tomoaki, Ito Daisuke, Sakata Osami, Kuroishi Junki, Namazu Takahiro, Shimizu Takao, Funakubo Hiroshi, Yoshino Masahito, Nagasaki Takanori

JSAP Annual Meetings Extended Abstracts 2015.8 The Japan Society of Applied Physics

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Event date： 2015.8

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Domain Structure in epitaxial orthorhombic HfO₂-based films

Shimizu Takao, Katayma Kiliha, Kiguchi Takanori, Akama Takahiro, Konno Toyohiko, Uchida Hiroshi, Sakata Osami, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2015.8 The Japan Society of Applied Physics

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Growth of epitaxial orthorhombic HfO₂-based films on Si substrate

Katayama Kiliha, Shimizu Takao, Kiguchi Takanori, Akama Akihiro, Toyohiko Konno, Uchida Hiroshi, Sakata Osami, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2015.8 The Japan Society of Applied Physics

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Event date： 2015.8

Language：Japanese

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Ferroelectricity in HfO₂-based epitaxial thin film

Shimizu Takao, Katayama Kiliha, Hiroshi Funakubo

JSAP Annual Meetings Extended Abstracts 2015.2 The Japan Society of Applied Physics

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Event date： 2015.2

Language：Japanese

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Fabrication and evaluation of HfO₂-ZrO₂ ultrathin films by chemical solution deposition

Abe Chihoko, Shiokawa Marina, Shiraishi Takahisa, Shimizu Takao, Funakubo Hiroshi, Uchida Hiroshi

JSAP Annual Meetings Extended Abstracts 2015.2 The Japan Society of Applied Physics

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Event date： 2015.2

Language：Japanese

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Crystallographic analysis of epitaxial HfO₂-based films containing orthorhombic phase

Katayama Kiliha, Shimizu Takao, Yokouchi Tatsuhiko, Shiraishi Takahisa, Oikawa Takahiro, Kiguchi Takanori, Akama Akihiro, Konno Toyohiko, Uchida Hiroshi, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2015.2 The Japan Society of Applied Physics

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Event date： 2015.2

Language：Japanese

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Orientation Dependence of Converse Piezoelectric Effect in Tetragonal PZT Thin Films and Nanorods

Yamada Tomoaki, Yasumoto Jun, Ito Daisuke, Sakata Osami, Imai Yasuhiko, Shiraishi Takahisa, Shimizu Takao, Funakubo Hiroshi, Yoshino Masahito, Nagasaki Takanori

JSAP Annual Meetings Extended Abstracts 2014.9 The Japan Society of Applied Physics

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Event date： 2014.9

Language：Japanese

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Fabrication and Characterization of Orthorhombic Epitaxial HfO₂-based Thin Films

Shimizu Takao, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2014.9 The Japan Society of Applied Physics

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Event date： 2014.9

Language：Japanese

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Analysis of Electrical Properties and Crystal Structure for (Hf,Zr)O2 Thin Films

Shiraishi Takahisa, Katayama Kiliha, Yokouchi Tatsuhiko, Shimizu Takao, Oikawa Takahiro, Uchida Hiroshi, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts 2014.9 The Japan Society of Applied Physics

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Event date： 2014.9

Language：Japanese

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Ferroelectric property of Hf_0.5Zr_0.5)O₂

Yokouchi Tatsuhiko, Shimizu Takao, Oikawa Takahiro, Shiraishi Takahisa, Funakubo Hiroshi, Kiguchi Takanori, Akama Akihiro, Toyohiko J. Konno, Kim Dong Jik, Gruverman Alexei

JSAP Annual Meetings Extended Abstracts 2014.3 The Japan Society of Applied Physics

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Event date： 2014.3

Language：Japanese

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Ferroelectricity of HfO₂-based films

Funakubo Hiroshi, Shimizu Takao, Yokouchi Tatsuhiko, Oikawa Takahiro, Shiraishi Takahisa

JSAP Annual Meetings Extended Abstracts 2014.3 The Japan Society of Applied Physics

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Event date： 2014.3

Language：Japanese

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異なる面方位を持つSrTiO₃基板上に成長したBaTiO₃薄膜における相転移

清水荘雄, 諏訪間大, 谷口博基, 谷山智康, 舟窪浩, 伊藤満

応用物理学会学術講演会講演予稿集 2013.8 公益社団法人応用物理学会

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Event date： 2013.8

Language：Japanese

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化学溶液堆積法によって作製した(111)配向Ba-Biペロブスカイト固溶体薄膜の誘電特性

木村純一, 清水荘雄, 内田寛, 舟窪浩

応用物理学会学術講演会講演予稿集 2013.8 公益社団法人応用物理学会

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Event date： 2013.8

Language：Japanese

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Research Projects

ウルツ鉱型強誘電体における分極反転ドメイン境界の解明と欠陥エンジニアリング

Grant number：24K01170 2024.4 - 2027.3

日本学術振興会科学研究費助成事業基盤研究(B)

清水荘雄

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Grant amount：\18590000 （ Direct Cost: \14300000 、 Indirect Cost：\4290000 ）

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ウルツ鉱型強誘電体の抗電界低減を可能とする置換カチオン探索

Grant number：23H04124 2023.4 - 2025.3

日本学術振興会科学研究費助成事業学術変革領域研究(A)

清水荘雄

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Grant amount：\6500000 （ Direct Cost: \5000000 、 Indirect Cost：\1500000 ）

ウルツ鉱型材料は、巨大な自発分極を示すことから大きな注目を集めているが、分極反転に必要な電界(抗電界)が大きく、実用化には大きな課題が残っている。本研究課題では、ウルツ鉱型強誘電体における抗電界が、固溶体の形成つまり元素置換によって顕著に低下することに着目し、この置換元素の構造を超秩序構造とみなして、抗電界低減を可能とするこの置換元素種の探索と局所構造解明を行う。2023年は、無置換AlNにおける強誘電性と、(Al, Sc)NにおけるScの局所構造解明を行ったので、以下に報告する。
従来の報告によれば、(Al, Sc)Nにおいては、Sc濃度10%以上の領域において強誘電性の発現が確認されているが、無置換のAlNにおいては室温での分極反転の報告はなかった。そこで本研究では、AlNにおける強誘電性の発現について研究を行った。はじめに、450℃で成膜したAlN膜の強誘電性について調査したところ、140 ℃以上の温度においては明瞭な強誘電性を確認できたのに対して、室温においては絶縁破壊が起こるため十分な電界を印加することができず、部分的な分極反転にとどまっていた。そこで、成膜温度を変化させることによって、絶縁破壊電界の改善を行ったところ、250 ℃での成膜によって8 MV/cm以上の絶縁破壊電界を得ることができ、室温での強誘電性の確認に成功した。
置換元素による抗電界の役割を理解するためには、置換元素の局所構造の解明が必要である。そこで、2023年度は蛍光X線ホログラフィー(XFH)測定およびX線吸収微細構造(XAFS)解析を行った。予備的な解析結果から、ScがAlが本来占めている原子位置よりも、窒素四面体の底面近傍に位置していることを示唆する結果を得ている。また。XAFS測定の解析によっても、Sc-N間の距離が長くなっていることが示唆されており、XFHの結果を支持する結果である。

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電場によって誘起されるドメイン界面の解明とそれを用いた機能発現

Grant number：20H05185 2020.4 - 2022.3

日本学術振興会科学研究費助成事業新学術領域研究(研究領域提案型)

清水荘雄

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Grant amount：\5980000 （ Direct Cost: \4600000 、 Indirect Cost：\1380000 ）

2年目にあたる2021年度は、(1)PbTiO3薄膜におけるドメイン構造、(2)非鉛圧電体におけるドメイン構造変化(3)HfO2基強誘電体における電場誘起相転移に関して研究を行った。
(1) PbTiO3薄膜におけるドメイン構造については、SiおよびKTaO3基板上のPbTiO3エピタキシャル膜に関してドメイン構造を検討した。熱膨張率の小さなSi上の薄膜においては、電場誘起ドメインスイッチングを用いた巨大圧電応答が発現することがわかっている。SiとPbTiO3に挟まれたSrTiO3バッファ層の影響によって、膜厚が小さい場合は分極が面直方向を向いたcドメインが形成されるが、膜厚が大きくなるにつれて、a/cドメインとa/aドメインが複合的に形成される構造に変化し、aドメインが優勢になることを明らかにした。また、KTaO3基板上のPbTiO3エピタキシャル膜に関しては成膜後の冷却過程でドメイン構造が変化することを見出した。
(2) 非鉛圧電体におけるドメイン構造変化については、チタン酸ビスマスナトリウム-チタン酸バリウムにおいて、高電圧ポーリング処理によって巨大圧電性が生じることを見出し、またこの圧電性がドメインスイッチングによるものであることを明らかにした。
(3)HfO2基強誘電体における電場誘起相転移に関しては、非ペロブスカイト型結晶構造の強誘電体において電場誘起構造変化が特性に大きく影響する例として研究を行った。HfO2基強誘電体においては、冷却過程においてクエンチされた正方晶の常誘電体相から、より安定な強誘電体相に電場誘起構造相転移が起こり、強誘電性が発現しうることを明らかにした。

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ウルツ鉱型極性材料による強誘電トンネル接合素子の創製と物性解明

Grant number：20344735 2020 - 2023

科学技術振興機構戦略的な研究開発の推進/戦略的創造研究推進事業/さきがけ

清水荘雄

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ウルツ鉱型強誘電体材料の持つ、巨大な自発分極、大きな抗電界、異方性結晶構造という特徴を生かして、小さな膜厚でも分極を保持しつつ、大きな抵抗オンオフ比を持つ強誘電体トンネル接合素子の実現をエピタキシャル薄膜成長を行うことによって目指す。さらに、分極反転メカニズムの解明や新物質探索を通して、信頼性の向上や物性の制御、さらに集積化に対する可能性を検証する。

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Development of MPB free piezoelectric materials by reversible ferroelastic domain switching

Grant number：19K15288 2019.4 - 2022.3

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Early-Career Scientists

SHIMIZU Takao

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Grant amount：\4160000 （ Direct Cost: \3200000 、 Indirect Cost：\960000 ）

This study proposes a new concept using domain switching to improve piezoelectric responses in the film-based piezoelectric materials without searching the morphotropic phase boundary. In lead zirconate titanate, the fine domain structure appeared by performing strong electric field poling, and piezoelectric property increased four times. The calculation study elucidated that this domain structure appears due to the release of the accumulated strain imposed during the cooling process. We obtained superior piezoelectric performance by applying this mechanism to lead-free piezoelectric film, bismuth sodium titanate-barium titanate solid solution film to other reported piezoelectric films. This result validates our new concept for improving piezoelectric properties without a morphotropic phase boundary strategy.

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Investigation of ferroelectric character in Wurtzite ferroelectrics using epitaxial films

Grant number：18H01701 2018.4 - 2021.3

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)

FUNAKUBO Hiroshi

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Grant amount：\17420000 （ Direct Cost: \13400000 、 Indirect Cost：\4020000 ）

Stable ferroelectricity was observed for the films with 14-111 nm in thickness. Phase change temperature between tetragonal and orthorhombic phases shows large hysteresis. Field induced strain from tetragonal to orthorhombic phase was discovered. Sputtered film without heating shows good ferroelectric properties compatible to that of heat-treated one at 1000℃.

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Development of new functionality in fluorite ferroelectrics through domain and phase coexistence

Grant number：17K14807 2017.4 - 2019.3

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Young Scientists (B)

Takao Shimizu

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Grant amount：\4290000 （ Direct Cost: \3300000 、 Indirect Cost：\990000 ）

The novel functionality had been developed in HfO2-based ferroelectric materials, which belongs novel ferroelectric class with the fluorite crystal structure. We found the electric field induced domain switching, which means the spontaneous polarization rotation by electric field. In addition, we confirm the ferroelectricity in micro-meter thick films, although the ferroelectricity in HfO2 films had been believed only in thin films below 100 nano-meter.

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Establishment of piezoelectric films with large piezoelectric response using reversible clamp effect from the substrates

Grant number：15H04121 2015.4 - 2018.3

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)

FUNAKUBO Hiroshi

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Grant amount：\16510000 （ Direct Cost: \12700000 、 Indirect Cost：\3810000 ）

(100)/(001)-oriented tetragonal Pb(Zr0.5Ti0.5)O3 epitaxial films with 2 micro meter in thickness were grown on Si, SrTiO3 and CaF2 substrates. Volume fraction of (001) orientation, Vc, changed by the thermal strain above Curie temperature. Vc value increased by the pooling process for all films. There two contributions to the piezoelectric response were observed for all films by the XRD observation under applied an electric field.
Orientation change from (001) to (100) orientation plays a main role for the piezoelectric response. In addition, films on Si substrates show the maximum orientation change and macroscopic piezoelectric response.

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Emergence of giant piezoelectric properties in non-perovskite zirconia-based ferroelectrics

Grant number：25889024 2013.8 - 2015.3

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Research Activity Start-up

SHIMIZU Takao

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Grant amount：\2730000 （ Direct Cost: \2100000 、 Indirect Cost：\630000 ）

The discovery of ferroelectricity in fluorite oxides materials indicates possibility to realize the giant electro-mechanism in the non-perovskite ferroelectric materials with high CMOS compatibility. As a results, it is found that generated phases can be changed by changing the crystallization condition. This means that the formation energy of the orthorhombic phase, which is considered to exhibit ferroelectricity, has similar value to that of the monoclinic and tetragonal phases. In addition, the comparison of the film crystalized under various atmosphere and measurement at low temperature were carried. The results imply that the ferroelectricity is not mediated by the mobile defect, such as oxygen vacancy. This means that the piezoelectricity can be expected because the ferroelectricity has structural origin.

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