Tokyo Institute of Technology   Materials and Structures Laboratory   Assistant Professor

2015.1 - 2016.3

Sharp corporation   Department of display device development

2012.4 - 2014.12

  SSDM（国際固体素子カンファレンス） 論文委員  

2020   

応用物理学会   学術講演会 プログラム編集委員  

2018 - 2023   

  独立行政法人日本学術振興会 166委員会 委員長補佐  

2015.1 - 2017.3   

日本学術振興会   産学協力研究委員会 １６６委員会  

2015 - 2022   

Reversible Thermal Conductivity Modulation of Non-equilibrium (Sn1-xPbx)S by 2D-3D Structural Phase Transition above Room Temperature Reviewed International journal

Zhongxu Hu, Mari Hiramatsu, Xinyi He, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

ACS Appl. Energy Mater.   Vol. 6   3504   2023.3

Local electronic structure of dilute hydrogen in Beta-Ga2O3 probed by muons Reviewed International journal

M. Hiraishi, H. Okabe, A. Koda, R. Kadono, T. Ohsawa, N. Ohashi, Keisuke Ide, Toshio Kamiya, Hideo Hosono

Phys. Rev. B   107 ( 4 )   2023.1

Low-temperature-processable amorphous-oxide-semiconductor-based phosphors for durable light-emitting diodes Reviewed International journal

Keisuke Ide, Naoto Watanabe, Takayoshi Katase, Masato Sasase, Junghwan Kim, Shigenori Ueda, Koji Horiba, Hiroshi Kumigashira, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

Appl. Phys. Lett.   Vol. 121 ( 19 )   192108   2022.11

Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn3N2 Films on a Glass Substrate Reviewed International journal

Kaiwen Li, Atsushi Shimizu, Xinyi He, Keisuke Ide, Kota Hanzawa, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Q. Zhang, Toshio Kamiya

ACS Appl. Electron. Mater.   Vol. 4 ( 4 )   2026   2022.4

Design, Synthesis, and Optoelectronic Properties of the High-Purity Phase in Layered AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf) Semiconductors Reviewed International journal

Akihiro Shiraishi, Shigeru Kimura, Xinyi He, Naoto Watanabe, Takayoshi Katase, Keisuke Ide, Makoto Minohara, Kosuke Matsuzaki, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya

INORG. CHEM.   61 ( 17 )   6650-6659 - 6659   2022.4

High-Mobility Metastable Rock-Salt Type (Sn,Ca)Se Thin Film Stabilized by Direct Epitaxial Growth on a YSZ (111) Single-Crystal Substrate Reviewed International journal

Xinyi He, Jinshuai Chen, Takayoshi Katase, Makoto Minohara, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya

ACS Appl. Mater. Interfaces   14 ( 16 )   18682–18689 - 18689   2022.4

Degenerated Hole Doping and Ultra-Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution Reviewed International journal

Xinyi He, Haoyun Zhang, Takumi Nose, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

Advanced Science   Vol. 9 ( 13 )   202105958   2022.3

Electronic and Lattice Thermal Conductivity Switching by 3D−2D Crystal Structure Transition in Nonequilibrium (Pb1−xSnx)Se Reviewed International journal

Yusaku Nishimura, Xinyi He, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Suguru Kitani, Kota Hanzawa, Shigenori Ueda, Hidenori Hiramatsu, Hitoshi Kawaji, Hideo Hosono, Toshio Kamiya

Advanced Electronic Materials   32   2200024 (1 of 9)   2022.2

Breaking of thermopower – conductivity trade-off in LaTiO3 film around Mott insulator to metal transition Reviewed International journal

Takayoshi Katase*, Xinyi He, Terumasa Tadano, Jan M. Tomczak, Takaki Onozato, Keisuke Ide, Bin Feng, Tetsuya Tohei, Hidenori Hiramatsu, Hiromichi Ohta, Yuichi Ikuhara, Hideo Hosono, Toshio Kamiya

Advanced Science   Vol. 8 ( 23 )   202102097   2021.10

Large phonon drag thermopower boosted by massive electrons and phonon leaking in LaAlO3/LaNiO3/LaAlO3 heterostructure Reviewed International journal

Masatoshi Kimura, Xinyi He, Takayoshi Katase*, Terumasa Tadano, Jan M. Tomczak, Makoto Minohara, Ryotaro Aso, Hideto Yoshida, Keisuke Ide, Shigenori Ueda, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya

Nano letters   Vol. 21 ( 21 )   9240 - 9246   2021.10

Ion substitution effect on defect formation in two-dimensional transition metal nitrides semiconductor, AETiN2 (AE = Ca, Sr, Ba) Reviewed International journal

Xinyi He, Takayoshi Katase*, Keisuke Ide, Hideo Hosono, Toshio Kamiya

Inorg. Chem.   Vol. 60 ( 14 )   10227 - 10234   2021.7

Local Structure Properties of Hydrogenated and Nonhydrogenated Amorphous In-Ga-Zn-O Thin Films Using XAFS and High-Energy XRD Reviewed International journal

Loku Singgappulige Rosantha Kumara, Kyohei Ishikawa, Keisuke Ide, Hideo Hosono, Toshio Kamiya, Osami Sakata

The Journal of Physical Chemistry C   125 ( 24 )   13619–13628 - 13628   2021.6

Reversible 3D-2D structural phase transition and giant electronic modulation in nonequilibrium alloy semiconductor, lead-tin-selenide Reviewed International journal

Takayoshi Katase, Yudai Takahashi, Xinyi He, Terumasa Tadano, Keisuke Ide, Hideto Yoshida, Shiro Kawachi, Jun-ichi Yamaura, Masato Sasase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

SCIENCE ADVANCES   Vol. 7 ( 12 )   eabf2725 - eabf2725   2021.3

Origins of the coloration from structure and valence state of bismuth oxide glasses Reviewed International journal

Akira Saitoh, Katsuki Hayashi, Kota Hanzawa, Shigenori Ueda, Shiro Kawachi, Jun-ichi Yamaura, Keisuke Ide, Junghwan Kim, Gregory Tricot, Satoru Matsuishi, Kazuki Mitsui, Tatsuki Shimizu, Masami Mori, Hideo Hosono, Hidenori Hiramatsu

J. NON-CRYST. SOLIDS.   560   120720-1 - 120720-14   2021.2

Double charge polarity switching in Sb-doped SnSe with switchable substitution sites Reviewed International journal

Chihiro Yamamoto, Xinyi He, Takayoshi Katase, Keisuke Ide, Yosuke Goto, Yoshikazu Mizuguchi, Akane Samizo, Makoto Minohara, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

Adv. Funct. Mater.   31 ( 8 )   202008092   2020.12

Shallow valence band of rutile GeO2 and p-type doping Reviewed International journal

Christian A. Niedermeier, Keisuke Ide, Takayoshi Katase, Hideo Hosono, Toshio Kamiya

J. Phys. Chem. C   vol. 124 ( 47 )   25721 - 25728   2020.11

Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO3, BaSnO3, and SrTiO3 Reviewed International journal

Christian A. Niedermeier, Yu Kumagai, Keisuke Ide, Takayoshi Katase, Fumiyasu Oba, Hideo Hosono, Toshio Kamiya

Phys. Rev. B   101 ( 12 )   125206-1-10   2020.3

Fabrication and characterization of CaxSr1-x)Si2 films prepared by co-sputtering method Reviewed International journal

Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo

MRS Advances   5 ( 10 )   451 - 458   2020.1

Thermoelectric (BaxSr1–x)Si2 films prepared by sputtering method over the barium solubility limit Reviewed

Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo

Jpn. J. Appl. Phys.   vol. 59 ( SF )   SFFB02-1-6   2020.1

Preparations of AeSi₂ films by a co-sputtering process

Aoyama Kodai, Shimizu Takao, Kuramochi Hideto, Mesuda Masami, Akiike Ryo, Ide Keisuke, Katase Takayoshi, Kamiya Toshio, Kimura Yoshisato, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts   2019.2   2999 - 2999   2019.9

Electronic structure of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muon Reviewed International journal

Kenji M. Kojima, Masatoshi Hiraishi, Hirotaka Okabe, Akihiro Koda, Rryosuke Kadono, Keisuke Ide, Satoru Matsuishi, Hideya Kumomi, Toshio Kamiya, Hideo Hosono

Applied Physics Letters   115 ( 12 )   122104-1-5   2019.9

New Amorphous In-Ga-Zn-O Thin-Film Transistor-Based Optical Pixel Sensor for Optical Input Signal with Short Wavelength Reviewed International journal

Chia-En Wu, Keisuke Ide, Takayoshi Katase, Hidenori Hiramastu, Hideo Hosono, Chih-Lung Lin, Toshio Kamiya

IEEE Transactions on Electron Devices   vol. 66 ( 9 )   3841 - 3846   2019.7

Intrinsic and Extrinsic Defects in Layered Nitride Semiconductor, SrTiN2 Reviewed International journal

Xinyi He, Zewen Xiao, Takayoshi Katase, Keisuke Ide, Hideo Hosono, Toshio Kamiya

Journal of Physical Chemistry C   vol. 123 ( 32 )   32 - 19314   2019.7

Multiple Color Inorganic Thin‐Film Phosphor, RE‐Doped Amorphous Gallium Oxide (RE = Rare Earth: Pr, Sm, Tb, and Dy), Deposited at Room Temperature Reviewed International journal

Naoto Watanabe, Keisuke Ide, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

physica status solidi (a)   Vol. 216 ( No. 5 )   1700833   2019.3

Thermoelectric property for Ba_xSr_1-xSi₂ films by co-sputtering process

Aoyama Kodai, Shimizu Takao, Kuramochi Hideto, Mesuda Masami, Akiike Ryo, Ide Keisuke, Katase Takayoshi, Kamiya Toshio, Kimura Yoshisato, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts   2019.1   1843 - 1843   2019.2

Transition metal-doped amorphous oxide semiconductor thin film phosphor, chromium-doped amorphous gallium oxide Reviewed International journal

Keisuke Ide, Yuki Futakado, Naoto Watanabe, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

Phys. Status Solidi A   216 ( 5 )   1800198   2018.8

(Invited) Depth Analysis of Near Valence Band Maximum Defect States in Amorphous Oxide Semiconductors: Amorphous in-Ga-Zn-O

Keisuke Ide, Masato Ota, Takayoshi Katase, Hidenori Hiramatsu, Shigenori Ueda, Hideo Hosono, Toshio Kamiya

ECS Meeting Abstracts   2018.7

Multiple states and roles of hydrogen in p-type SnS semiconductors Reviewed International journal

Zewen Xiao, Fan-Yong Ran, Min Liao, Hidenori Hiramatsu, Keisuke Ide, Hideo Hosono, Toshio Kamiya

PHYSICAL CHEMISTRY CHEMICAL PHYSICS   30 ( 32 )   4498 - 4502   2018.7

Effects of Base Pressure on Growth and Optoelectronic Properties of Amorphous In‐Ga‐Zn‐O: Ultralow Optimum Oxygen Supply and Bandgap Widening Reviewed International journal

Keisuke Ide, * Kyohei Ishikawa, Haochun Tang, Takayoshi Katase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

physica status solidi (a)   216 ( 1700832 )   1 - 6   2018.2

Amorphous Gallium Oxide as an Improved Host for Inorganic Light-Emitting Thin Film Semiconductor Fabricated at Room Temperature on Glass Reviewed International journal

Naoto Watanabe, Junghwan Kim, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Shigenori Ueda, Hideo Hosono, Toshio Kamiya

ECS Journal of Solid State Science and Technology   Vol. 6 ( 7 )   410 - 414   2017.5

Multiple Roles of Hydrogen Treatments in Amorphous In-Ga-Zn-O Films Reviewed International journal

Haochun Tang, Yosuke Kishida, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Satoru Matsuishi, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

ECS J. Sol. State Sci. Technol.   6 ( 7 )   365 - 372   2017.5

Electron effective mass and mobility limits in degenerate perovskite stannate BaSnO₃ Reviewed International journal

Christian A. Niedermeier, Sneha Rhode, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya, Michelle A. Moram

Physical Review B Rapid Communications   95 ( 95 )   161202(R)-1 - 6   2017.4

Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor Reviewed International journal

Junghwan Kim, Takumi Sekiya, Norihiko Miyokawa, Naoto Watanabe, Koji Kimoto, Keisuke Ide, Yoshitake Toda, Shigenori Ueda, Naoki Ohashi, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

NPG Asia Materials   vol. 9 ( 3 )   e359   2017.3

Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In–Ga–Zn–O thin-film transistors Reviewed International journal

Keisuke Ide, Mitsuho Kikuchi, Masato Ota, Masato Sasase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

Jpn. J. Appl. Phys.   Vol. 56 ( 3 )   03BB03-1 - 5   2017.1

Amorphous Gallium Oxide as an Improved Host for Inorganic Light-Emitting Thin Film Semiconductor Fabricated at Room Temperature on Glass (vol 6, pg P410, 2017) Reviewed

Naoto Watanabe, Junghwan Kim, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Shigenori Ueda, Hideo Hosono, Toshio Kamiya

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   6 ( 7 )   X1 - X1   2017

Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O Reviewed International journal

Junghwan Kim, Norihiko Miyokawa, Takumi Sekiya, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

Thin Solid Films   Vol. 614   84 - 89   2016.9

Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor Reviewed International journal

Junghwan Kim, Norihiko Miyokawa, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

AIP Advances   Vol. 6 ( 1 )   015106   2016

Transparent amorphous oxide semiconductor thin film phosphor, In–Mg–O:Eu Reviewed International journal

Junghwan KIM, Norihiko MIYOKAWA, Keisuke IDE, Hidenori HIRAMATSU, Hideo HOSONO, Toshio KAMIYA

J. Cerm. Soc. Jpn.   Vol. 124 ( 5 )   532 - 535   2016

Effects of thermal annealing on elimination of deep defects in amorphous In–Ga–Zn–O thin-film transistors Reviewed International journal

Haochun Tang, Keisuke Ide, Hidenori Hiramatsu, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

Thin Solid Films   Vol. 614   73 - 78   2016

Solid phase epitaxial growth of high mobility La:BaSnO₃ thin films co-doped with interstitial hydrogen Reviewed International journal

Christian A. Niedermeier, Sneha Rhode, Sarah Fearn, Keisuke Ide, Michelle A. Moram, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

Appl. Phys. Lett.   Vol. 108 ( 17 )   172101-1 -5   2016

SnS thin films prepared by H2S-free process and its p-type thin film transistor Reviewed International journal

Fan-Yong Ran, Zewen Xiao, Hidenori Hiramatsu, Keisuke Ide, Hideo Hosono, Toshio Kamiya

AIP Adv.   Vol. 6 ( 1 )   015112-1 - 6   2016

Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films Reviewed International journal

Haochun Tang, Kyohei Ishikawa, Keisuke Ide, Hidenori Hiramatsu, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

J. Appl. Phys.   Vol. 118 ( 20 )   205703-1-6   2015

Light Irradiation History Sensor Using Amorphous In-Ga-Zn-O Thin-Film Transistor Exposed to Ozone Annealing Reviewed International journal

Mutsumi Kimura, Takayuki Hasegawa, Keisuke Ide, Kenji Nomura, Toshio Kamiya, Hideo Hosono

IEEE Electron Dev. Lett.   Vol. 33 ( No. 3 )   384 - 386   2012.2

Structural relaxation in amorphous oxide semiconductor Reviewed International journal

Keisuke Ide, Kenji Nomura, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

J. Appl. Phys   Vol. 111 ( No. 073513 )   1 - 6   2012

Maximum applied voltage detector using amorphous In-Ga-Zn-O thin film transistor exposed to ozone annealing Reviewed International journal

Mutsumi Kimura, Takayuki Hasegawa, Keisuke Ide, Kenji Nomura, Toshio Kamiya, Hideo Hosono

Solid-State Electronics   Vol. 75   74 - 76   2012

Effects of low-temperature ozone annealing on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors Reviewed International journal

Keisuke Ide, Yutomo Kikuchi, Kenji Nomura, Toshio Kamiya, Hideo Hosono

Thin Solid Films   Vol. 520 ( 10 )   3787 - 3790   2012

Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors Reviewed International journal

Keisuke Ide, Yutomo Kikuchi, Kenji Nomura, Mutsumi Kimura, Toshio Kamiya, Hideo Hosono

Appl. Phys. Lett   Vol. 99 ( No. 093507 )   1 - 3   2011

Novel Structured Metallic and Inorganic Materials

Toshio Kamiya, Hidenori Hiramatsu, Keisuke Ide, Takayoshi Katase, Hideo Hosono（ Role： ContributorExotic Crystal Structures and Electronic Structures in Novel Structured Inorganic Materials (pp. 107-120)）

Springer Singapore  2019 

Novel Structured Metallic and Inorganic Materials

Toshio Kamiya, Kenji Nomura, Keisuke Ide, Junghwan Kim, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono（ Role： ContributorAmorphous oxide semiconductor thin-film transistors (pp. 573-587)）

2019 

（受賞記念講演）Electronic Structures and Defects Analysis of Amorphous Oxide Semiconductor toward IGZO Display Application Invited

Keisuke Ide

International Display Workshops  2022.12 

（招待講演）アモルファス酸化物半導体における機能開拓の最前線 Invited

井手啓介, 細野秀雄, 神谷利夫

第70回応用物理学会 春季学術講演会 シンポジウム  2023.3 

（招待講演）Rare-earth and transition metal doping for amorphous oxide semiconductor Invited

Keisuke Ide, Hideo Hosono, Toshio Kamiya

Material Research Meeting 2021  2021.12 

（招待講演）Electronic defects in AOS and recent development Invited

Keisuke Ide, Hideo Hosono, Toshio Kamiya

The 27th International Workshop on Active-Matrix Flat panel Displays and Devices  2020.6 

（招待講演）Present status of amorphous oxide semiconductor: Electronic defects and material development Invited

Keisuke Ide, Hideo Hosono, Toshio Kamiya

ISPlasma/IC-PLANTS2021  2021.3 

（招待講演）Development of new amorphous oxide semiconductors Invited

Keisuke Ide, Hideo Hosono, Toshio Kamiya

International Conference on Display Technology 2020  2020.3 

（招待講演）Depth Analysis of Near VBM Defect in Amorphous Oxide Semiconductor Invited

Keisuke Ide, Masato Ota, Takayoshi Katase, Hidenori Hiramatsu, Shigenori Ueda, Hideo Hosono, Toshio Kamiya

Intl. Meeting on Electrochem. and Solid-State Science  2018.9 

（招待講演）アモルファス酸化物半導体を用いた新規デバイスの開拓 Invited

井手啓介, 金正煥, 片瀬貴義, 細野秀雄, 神谷利夫

第１６回薄膜材料デバイス研究会  2019.10 

（招待講演）アモルファス酸化物半導体の欠陥・物性に関する理解とデバイス応用の現状 Invited

井手啓介, 金正煥, 片瀬貴義, 平松秀典, 雲見日出也, 細野秀雄, 神谷利夫

電子情報通信学会 2017年 ソサイエティ大会  2017.9 

（受賞記念講演）全反射硬X線光電子分光法によるアモルファス酸化物半導体の価電子帯直上欠陥の深さ方向分布 Invited

井手啓介, 太田雅人, 岸田陽介, 片瀬貴義, 平松秀典, 上田茂典, 雲見日出也, 細野秀雄, 神谷利夫

第65回応用物理学会春季学術講演会  2018.3 

(招待講演) Amorphous Oxide Semiconductors for Optoelectronic Applications Invited

Keisuke Ide

2025.5 

（講師）ＩＧＺＯのスパッタ成膜と新規物性 Invited

井手啓介

日本真空学会SP部会 第181回定例研究会  2025.3 

(111)配向非平衡岩塩型(Sn,Ca)Seエピタキシャル薄膜のドメイン境界の電気特性

片瀬貴義, ホ シンイ, チェン ジンシュアイ, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫

日本セラミックス協会第42回電子材料研究討論会  2022.11 

非平衡(Sn1-xPbx)S固溶体の格子間Snによる高濃度電子ドーピング

フゾンシュ, 平松茉莉, ホシンイ, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫

日本セラミックス協会第42回電子材料研究討論会  2022.11 

高移動度岩塩型(Sn,Ca)Se準安定相のエピタキシャル薄膜成長とキャリア輸送特性

片瀬貴義, ホ シンイ, チェン ジンシュアイ, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫

第83回応用物理学会秋季学術講演会  2022.9 

準安定(Pb1-xSnx)Se固溶体の2次元-3次元構造転移に伴う熱伝導率変調

片瀬貴義, 西村優作, ホ シンイ, 只野央将, 井手啓介, 気谷卓, 半沢幸太, 平松秀典, 川路均, 細野秀雄, 神谷利夫

第83回応用物理学会秋季学術講演会  2022.9 

準安定(Pb1-xSnx)Se固溶体の合成：2次元-3次元構造転移の誘起と電気・熱伝導率変調

片瀬貴義, ホ シンイ, チェン ジンシュアイ, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫

日本セラミックス協会第42回電子材料研究討論会  2022.11 

(Sn1-xPbx)S固溶体の非平衡合成と熱・電気特性制御

フゾンシュ, 平松茉莉, ホシンイ, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫

応用物理学会第6回フォノンエンジニアリング研究会  2022.7 

Degenerated hole doping and enhanced thermoelectric figure-of-merit ZT in layered SnSe by isovalent Te ion substitution

Xinyi He, Haoyun Zhang, Takumi Nose, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, hidenori hiramatsu, HIDEO HOSONO, TOSHIO KAMIYA

2022.9 

(111)配向非平衡岩塩型(Sn,Ca)Seエピタキシャル薄膜のドメイン境界の電気特性

ホシンイ, チェン ジンシュアイ, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫

日本セラミックス協会 第35回秋季シンポジウム  2022.9 

層状SnSe非平衡相のエピタキシャル膜による安定化と構造・電気特性

樋口龍生, 片瀬貴義, 半沢幸太, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫

日本セラミックス協会 第35回秋季シンポジウム  2022.9 

非平衡(Sn,Pb)S固溶体の合成: 格子間Snによる電子ドーピングと強フォノン散乱

フゾンシュ, 平松茉莉, ホシンイ, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫

日本セラミックス協会 第35回秋季シンポジウム  2022.9 

第一原理計算による環境調和型熱電変換材料の探索システム構築

南島悠人, ホシンイ, 井手啓介, 片瀬貴義, 神谷利夫

薄膜材料デバイス研究会第20回研究集会「薄膜材料デバイス研究会が見据える次世代技術・未来デバイス」  2023.11 

Thermal conductivity modulation using morphotropic phase boundary of 2D-3D chalcogenide semiconductors International conference

Takayoshi Katase, Xinyi He, Yusaku Nishimura, Keisuke Ide, Hidenori Hiramatsu, Toshio Kamiya

The 3rd International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture  2023.10 

Amorphous-oxide-semiconductor-based phosphors for inorganic light-emitting diodes International conference

Keisuke Ide, Takayoshi Katase, Toshio Kamiya

The 3rd International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture  2023.10 

Search of optimal deposition conditions and regression model of a-In-Ga-Zn-O by machine learning International conference

Atsushi Shimizu, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

The 23rd International Meeting on Information Display  2023.8 

ZnO中の水素複合欠陥

ホ シンイ, 片瀬貴義, 井手啓介, 細野秀雄, 神谷利夫

薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス：SDGs実現へ向けて」  2022.11 

アモルファス 12CaO・7Al2O3 を用いた ReRAM

門野太助, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫

薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス：SDGs実現へ向けて」  2022.11 

Mobility analysis for polycrystalline and amorphous oxide semiconductors using Seto model combined with in-grain scattering factors International conference

Keisuke Ide, Tasuke Kadono, Atsushi Shimizu, Koji Yamaguchi, Emi Kawashima, Yuki Tsuruma, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

The 23rd International Meeting on Information Display  2023.8 

Suppressing Hydrogen Diffusion and Enhancing Reliability of Short-Channel InGaZnO Thin Film Transistors by Bottom-Gate Oxide Engineering

K. Zhou, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, B. Huang, P. Yen, T. Chang, S. M. Sze

薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス：SDGs実現へ向けて」  2022.11 

超高真空スパッタリング装置を用いた高移動度多結晶 Zn3N2 薄膜

清水篤, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫

薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス：SDGs実現へ向けて」  2022.11 

スパッタリング法によるアモルファス酸化ガリウム薄膜の作製とダイオー ド特性の評価

嵯峨野太一, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫

薄膜材料デバイス研究会 第19回研究集会「新半導体材料・デバイス：SDGs実現へ向けて」  2022.11 

Device characteristics of rare-earth doped amorphous oxide semiconductors International conference

T. Kamiya, K. Ide, K. Takenaka, Y. Setsuhara, A. Hiraiwa, H. Kawarada, T. Katase, H. Hiramatsu, H. Hosono

The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3)  2018.9 

Why Poly-OS IGO Exhibits Mobilities > 50cm2/Vs International conference

Y. Tsuruma, K. Yamaguchi, D. Sasaki, E. Kawashima, T. Kadono, K. Ide, T. Katase, M. Kimura, T. Kamiya

PRiME 2024  2024.10 

Electric double layer transistor and electron-transport properties of (Tl,K)2Fe4Se5 thin films International conference

T. Katase, K. Ide, H. Hiramatsu, H. Hosono, T. Kamiya

The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-3)  2018.9 

Tandem neural network for direct solution of multivalued inverse problem International conference

Toshio Kamiya, Masatoshi Kimura, Keisuke Ide, Takayoshi Katase

The 4th International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture (DEJI2MA2024)  2024.10 

Electrical characteristics of microfabricatd ferromagneticl material La0.67Sr0.33MnO3 International conference

Yasuo Azuma, Yusaku Kobayashi, Keisuke Ide, Takayoshi Katase, Toshio Kamiya

The 3rd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development  2018.9 

What determines electron effective mass and structural stability in crystalline semiconductors with InGaZnO4 isostructures International conference

Tomoya Suzuki, Keisuke Ide, Takayoshi Katase, Hideo Hosono, Toshio Kamiya

IMID 2024  2024.8 

遷移金属元素を発光中心としたアモルファス酸化物半導体蛍光体薄膜の探索

二角勇毅, 渡邉脩人, 井手啓介, 金正煥, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫

第56回 セラミックス基礎科学討論会  2018.1 

InGaZnO4 型ホモロガス酸化物における高移動度半導体の設計

鈴木朝也, 井手啓介, 片瀬貴義, 細野秀雄, 神谷利夫

薄膜材料デバイス研究会第20回研究集会「薄膜材料デバイス研究会が見据える次世代技術・未来デバイス」  2023.11 

機械学習を用いたアモルファス In-Ga-Zn-O トランジスタの高速特性予測および欠陥解析

木村公俊, K. Zhou, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, T. Chang, 神谷利夫

薄膜材料デバイス研究会第20回研究集会「薄膜材料デバイス研究会が見据える次世代技術・未来デバイス」  2023.11 

機械学習による多孔質アモルファス In-Ga-Zn-O 薄膜の成膜条件最適化

清水篤, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫

薄膜材料デバイス研究会第20回研究集会「薄膜材料デバイス研究会が見据える次世代技術・未来デバイス」  2023.11 

機械学習による多値逆問題解析:アモルファス酸化物半導体トランジスタの欠陥分布・電子輸送を例に

木村 公俊, Kuan-Ju Zhou, 井手 啓介, 片瀬 貴義, 平松 秀典, 細野 秀雄, Ting-Chang Chang, 神谷 利夫

応用物理学会第71回春季学術講演会  2024.3 

元素置換InGaZnO4の構造安定性と電子構造の支配因子

鈴木 朝也, 井手 啓介, 片瀬 貴義, 細野 秀雄, 神谷 利夫

応用物理学会第71回春季学術講演会  2024.3 

Strain-induced modulation of thermopower and electrical conductivity of LaTiO3 epitaxial films on LaAlO3 substrate International conference

T. Katase, K. Ide, H. Hiramatsu, H. Hosono, T. Kamiya

10th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO-10)  2017.7 

Optimization of deposition parameters for porous a-IGZO thin films using machine learning regression International conference

Atsushi Shimizu, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

STAC - D2MatE 2024  2024.2 

Exploration of New Oxide Light-Emitting Semiconductor Thin Films Using Transition Metals International conference

Y. Futakado, N. Watanabe, K. Ide, J. Kim, T. Katase, H. Hiramats, H. Hosono, T. Kamiya

10th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics  2017.7 

Reversible thermal conductivity modulation above room temperature by 2D-3D structural phase transition in non-equilibrium (Sn1-xPbx)S solid solution International conference

Zhongxu Hu, Mari Hiramatsu, Xinyi He, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

STAC - D2MatE 2024  2024.2 

Structural Relaxation, Crystallization, and Defect Passivation in Amorphous In-Ga-Zn-O International conference

T. Kamiya, K. Ide, K. Nomura, H. Kumomi, H. Hosono

Proc. IDW'13  2013.12 

FeSb2薄膜のヘテロエピタキシャル成長と熱電特性

山本千紘, 半沢幸太, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫:

薄膜材料デバイス研究会 第15回研究集会  2018.11 

エピタキシャル歪により増強されるLaNiO3極薄膜のフォノンドラッグ熱電特性

樋口雄飛, 井手啓介, Christian A. Niedermeier, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫

薄膜材料デバイス研究会 第15回研究集会  2018.11 

層状半導体Sr2CuMO3S(M= Ga, In)の合成と光電子物性

森大介, 渡邊脩人, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫

薄膜材料デバイス研究会 第15回研究集会  2018.11 

ガラス上に成長させた層状セレン化スズ薄膜の電気特性と薄膜トランジスタ

松尾健志, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫

薄膜材料デバイス研究会 第15回研究集会  2018.11 

超ワイドバンドギャップアモルファス酸化物半導体a-Ga-Oを用いたショットキーダイオードの作製

笠井悠莉華, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫

薄膜材料デバイス研究会 第15回研究集会  2018.11 

Depth Analysis of Near Valence Band Mximum Defect States in Amorphous Oxide Semiconductors: In-Ga-Zn-O International conference

Keisuke Ide, Masato Ota, Takayoshi Katase, Hidenori Hiramatsu, Shigenori Ueda, Hideo Hosono, Toshio Kamiya

Americas international Meeting on Electrochemistry and Solid state science (AiMES)  2018.9 

第一原理計算による層状 (AE = Ca, Sr, Ba)の電子構造と欠陥生成・キャリアドーピング機構の理論解析

ホシンイ, シャオチーウェン, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫

薄膜材料デバイス研究会 第15回研究集会  2018.11 

Cr添加アモルファス酸化ガリウム薄膜のフォトルミネッセンス特性

井手啓介, 二角勇毅, 渡邉脩人, 金正煥, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫

薄膜材料デバイス研究会 第15回研究集会  2018.11 

希土類添加アモルファス酸化物半導体の電気物性とトランジスタ特性

西間木祐紀, 井手啓介, 渡邊脩人, 金正煥, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫

薄膜材料デバイス研究会 第15回研究集会  2018.11 

アモルファス酸化物半導体をホストとする蛍光体を用いた直流駆動型発光素子の室温形成

渡邊脩人, 井手啓介, 片瀬貴義, 笹瀬雅人, 戸田喜丈, 金正煥, 上田茂典, 堀場弘司, 組頭広志, 平松秀典, 細野秀雄, 神谷利夫

薄膜材料デバイス研究会 第15回研究集会  2018.11 

熱起電力と導電率のトレードオフの関係を破る酸化物熱電材料LaNiO3の高出力特性

樋口 雄飛, 片瀬 貴義, 只野 央将, 藤岡 淳, 井手 啓介, 平松 秀典, 細野 秀雄, 神谷 利夫

第67回応用物理学会春季学術講演会  2020.3 

層状結晶半導体SrTiN2の高純度試料合成と光電子輸送特性

渡邉 脩人, 白石 明浩, ホ シンイ, 片瀬 貴義, 井手 啓介, 松崎 功佑, 平松 秀典, 細野 秀雄, 神谷 利夫

第67回応用物理学会春季学術講演会  2020.3 

Sb添加SnSeのゼーベック・ホール係数の二重極性反転機構

山本 千紘, ホ シンイ, 橋本 幸花, 片瀬 貴義, 井手 啓介, 平松 秀典, 上田 茂典, 細野 秀雄, 神谷 利夫

第67回応用物理学会春季学術講演会  2020.3 

モット絶縁体LaNiO3超薄膜に発現する巨大フォノンドラッグ熱電効果

木村 公俊, 樋口 雄飛, 片瀬 貴義, 蓑原 誠人, 麻生 亮太郎, 吉田 秀人, 井手 啓介, 平松 秀典, 上田 茂典, 組頭 広志, 細野 秀雄, 神谷 利夫

第67回応用物理学会春季学術講演会  2020.3 

LaNiO3極薄膜の金属-絶縁体転移に伴う巨大フォノンドラッグ熱電効果の発現

木村公俊, 樋口雄飛, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫

日本セラミックス協会 第40回電子材料研究討論会  2020.11 

LaNiO3超薄膜の表面終端処理によるフォノンドラッグ熱電能の増強効果

木村公俊, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫

薄膜材料デバイス研究会 第17回研究会「薄膜デバイスの原点」  2020.11 

超ワイドギャップa-Ga-O薄膜トランジスタへの水素プラズマ処理効果

加藤昭宏, 笠井悠莉華, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫

薄膜材料デバイス研究会 第17回研究会「薄膜デバイスの原点」  2020.11 

水素ドープアモルファス酸化ガリウムを用いた薄膜トランジスタ

加藤昭宏, 笠井悠莉華, 井手啓介, 片瀬貴義, 平松 秀典, 細野 秀雄, 神谷 利夫

第67回応用物理学会春季学術講演会  2020.3 

Power-factor enhancement by breaking trade-off relation of electrical conductivity and thermopower in strain-controlled transition metal oxide

Takayoshi Katase, Yuhi Higuchi, Terumasa Tadano, Jun Fujioka, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

日本セラミックス協会 第58回セラミックス基礎科学討論会  2020.1 

準安定(Pb1-xSnx)Se固溶体バルク試料の合成と2次元-3次元構造転移に伴う巨大電子物性変調

西村優作, ホーシンイ, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫

日本セラミックス協会 第40回電子材料研究討論会  2020.11 

準安定(Pb1-xSnx)Se薄膜の2次元-3次元構造転移と巨大電子物性変調

高橋 雄大, 片瀬 貴義, ホ シンイ, 只野 央将, 井手 啓介, 吉田 秀人, 河智 史朗, 山浦 淳一, 笹瀬 雅人, 平松 秀典, 細野 秀雄, 神谷 利夫

2021年第68回応用物理学会春季学術講演会  2021.3 

超ワイドギャップアモルファス酸化物半導体を用いたショットキーバリアダイオードの逆バイアス特性

井手啓介, 笠井悠莉華, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫

2021年第68回応用物理学会春季学術講演会  2021.3 

超ワイドギャップアルカリ土類酸化物への電子ドーピングの理論的検討

橋本幸花, ホーシンイ, 片瀬貴義, 井手啓介, 細野秀雄, 神谷利夫

日本セラミックス協会 第40回電子材料研究討論会  2020.11 

2次元層状半導体AETMN2 (AE = Sr, Ba, TM = Ti, Zr, Hf)の高純度試料合成と電気・磁気特性

白石明浩, ホー シンイ, 渡邉脩人, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫

日本セラミックス協会 第40回電子材料研究討論会  2020.11 

Phonon-drag driven giant anisotropic thermopower in epitaxially strained LaNiO3 (110) ultra-thin films International conference

Masatoshi Kimura, Xinyi He, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12)  2021.7 

Electronic structures and electro-optical properties of layered oxychalcogenide semiconductor, AE2CuInO3Ch (AE: Alkaline earth, Ch: Chalcogen) International conference

Xinyi He, Tatsuya Cho, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12)  2021.7 

High electron conductivity and extremely low thermal conductivity of layered SnS semiconductor by geometrical Pb doping International conference

Mari Hiramatsu, Xinyi He, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12)  2021.7 

Degenerate hole conduction and ultra-low lattice thermal conductivity of SnSe by nonequilibrium isovalent Te substitution International conference

Takumi Nose, Xinyi He, Haoyun Zhang, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12)  2021.7 

Density functional study on electronic structure, defect formation and carrier doping control of AETMN2 (AE=Ca,Sr,Ba, TM=Ti,Zr,Hf)

ホーシンイ, 片瀬貴義, 井手啓介, 細野秀雄, 神谷利夫

日本セラミックス協会 第40回電子材料研究討論会  2020.11 

層状半導体AE2CuInO3Ch (AE :アルカリ土類、Ch :カルコゲン)の光電子物性と両極性伝導制御の可能性

長達也, ホーシンイ, 森大介, 片瀬貴義, 井手啓介, 平松秀典, 細野秀雄, 神谷利夫

日本セラミックス協会 第40回電子材料研究討論会  2020.11 

Effect of hydrogen doping on transport property of ultrawide bandgap amorphous oxide semiconductor, amorphous Ga-O International conference

Keisuke Ide, Yukari Kasai, Akihiro Kato, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12)  2021.7 

Origin of high-density hole doping by isovalent Te substitution in SnSe International conference

Xinyi He, Haoyun Zhang, Takumi Nose, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12)  2021.7 

Fabrication of Zn3N2 electric double layer transistor by ionic liquid gating International conference

Kaiwen Li, Kota Hanzawa, Keisuke Ide, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Qun Zhang, Toshio Kamiya

The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12)  2021.7 

Effect of hydrogen doping on transport property of ultrawide bandgap amorphous oxide semiconductor, amorphous Ga-O International conference

Keisuke Ide, Yukari Kasai, Akihiro Kato, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12)  2021.7 

逆ペロブスカイト型酸化物Ba3(Si,Ge)Oの高純度バルク合成と電気特性評価

木村茂, ホ シンイ, 片瀬 貴義, 井手 啓介, 平松 秀典, 細野 秀雄, 神谷 利夫

薄膜材料デバイス研究会 第18回研究集会  2021.11 

Room-temperature fabrication of ionic liquid gated Zn3N2 electric double layer transistors with non-degenerate channel electron density International conference

Kaiwen Li, Kota Hanzawa, Keisuke Ide, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Zhang Qun, Toshio Kamiya

2021 International Conference on Solid State Devices and Materials (SSDM 2021)  2021.9 

Room-temperature fabrication of ionic liquid gated Zn3N2 electric double layer transistors with non-degenerate channel electron density International conference

Kaiwen Li, Kota Hanzawa, Keisuke Ide, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Zhang Qun, Toshio Kamiya

2021 International Conference on Solid State Devices and Materials (SSDM 2021)  2021.9 

Strain-induced large power-factor enhancement by breaking thermoelectric trade-off relation in lanthanum nickel oxide International conference

Masatoshi Kimura, Yuhi Higuchi, Xinyi He, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12)  2021.7 

3D-2D structural phase transition and giant electronic conductivity modulation in non-equilibrium hetero-structural alloy, (Pb1-xSnx)Se International conference

Takayoshi Katase, Xinyi He, Terumasa Tadano, Keisuke Ide, Hideto Yoshida, Shiro Kawachi, Junichi Yamaura, Masato Sasase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12)  2021.7 

Thermoelectric properties of non-equilibrium SnSe thin films stabilized by epitaxial strain International conference

Ryusei Higuchi, Takayoshi Katase, Kota Hanzawa, Shintaro Yasui, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

The Twelfth International Conference on the Science and Technology for Advanced Ceramics (STAC12)  2021.7 

Transport properties of Zn3N2 investigated by ionic liquid gated electric-double-layer transistors International conference

Kaiwen Li, Kota Hanzawa, Keisuke Ide, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Zhang Qun, Toshio Kamiya

Materials Research Meeting 2021  2021.12 

Appearance and large enhancement of phonon drag thermopower by epitaxial strain and phonon leaking from LaAlO3 in LaNiO3 International conference

Masatoshi Kimura, Xinyi He, Takayoshi Katase, Terumasa Tadano, Jan M. Tomczak, Makoto Minohara, Ryotaro Aso, Hideto Yoshida, Keisuke Ide, Shigenori Ueda, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya

Materials Research Meeting 2021  2021.12 

Enhanced thermoelectric figure-of-merit ZT in layered SnSe doped with isovalent Te and its origin clarified by density functional theory International conference

Xinyi He, Haoyun Zhang, Takumi Nose, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

Materials Research Meeting 2021  2021.12 

Fabrication and characterization of resistive random-access memory device using amorphous 12CaO·7Al2O3 International conference

Tasuke Kadono, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

Materials Research Meeting 2021  2021.12 

Local bonding structures in amorphous oxide semiconductors studied by DFT and machine-learning potential

Liwei Li, Keisuke Ide, Takayoshi Katase, Hideo Hosono, Toshio Kamiya

第60回日本セラミックス協会 セラミックス基礎科学討論会  2022.1 

High-purity bulk synthesis and electronic properties of a two-dimensional layered semiconductor, alkaline earth transition metal nitrides International conference

Shigeru Kimura, Akihiro Shiraishi, Xinyi He, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

Materials Research Meeting 2021  2021.12 

Double charge polarity conversion by Sb doping in layered SnSe with switchable substitution sites International conference

Xinyi He, Chihiro Yamamoto, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

2021 Materials Research Society Fall Meeting & Exhibit  2021.11 

Large phonon drag thermopower enhancement by epitaxial strain and phonon leaking in LaAlO3 / LaNiO3 / LaAlO3 heterostructure International conference

Masatoshi Kimura, Xinyi He, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

2021 Materials Research Society Fall Meeting & Exhibit  2021.11 

Two-dimensional layered semiconductors AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf); high-purity bulk synthesis and electronic property characterization International conference

Shigeru Kimura, Akihiro Shiraishi, Xinyi He, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

2021 Materials Research Society Fall Meeting & Exhibit  2021.11 

300cm2/Vs以上の粒内正孔移動度を示す非平衡岩塩型(Sn,Ca)Seエピタキシャル薄膜

ホ シンイ, チェン ジンシュアイ, 片瀬 貴義, 井手 啓介, 平松 秀典, 細野 秀雄, 神谷 利夫

薄膜材料デバイス研究会 第18回研究集会  2021.11 

Epitaxial structure and thickness dependent phonon-drag thermoelectric properties of LaNiO3 thin film on LaAlO3 (001) substrate International conference

Masatoshi Kimura, Yuhi Higuchi, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

11th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-11)  2019.10 

Biaxial-strain induced power-factor enhancement in metallic strongly correlated transition metal oxide LaNiO3 International conference

Yuhi Higuchi, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

11th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-11)  2019.10 

Synthesis and opto-electronic properties of layered oxychalcogenides, AE2CuInO3Ch (AE = Ca, Sr, Ba, and Ch = S, Se, Te) International conference

Tatsuya Cho, Daisuke Mori, Xiyi He, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

11th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-11)  2019.10 

アモルファス酸化ガリウムを用いたショットキーバリアダイオード特性と光応答

笠井悠莉華, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫

薄膜材料デバイス研究会 第16回研究集会「新時代に向けた薄膜材料のデバイス技術」  2019.11 

Low-temperature fabrication of phosphor thin-film and light emitting device using amorphous oxide semiconductor International conference

Keisuke Ide, Naoto Watanabe, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

International Conference on Materials and Systems for Sustainability 2019 (ICMaSS2019)  2019.11 

Single crystal growth of cubic SrGeO3 and estimation of intrinsic electron mobility International conference

Christian A. Niedermeier, Yu Kumagai, Keisuke Ide, Takayoshi Katase, Fumiyasu Oba, Hideo Hosono, Toshio Kamiya

11th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-11)  2019.10 

Optoelectrical properties and thin-film transistor operation of rare-earth-doped amorphous oxide semiconductors International conference

Keisuke Ide, Yuki Nishimagi, Naoto Watanabe, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

11th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-11)  2019.10 

アモルファス酸化ガリウム薄膜への電子ドーピングとショットキーダイオード

笠井悠莉華, 井手啓介, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫

日本セラミックス協会 第39回電子材料研究討論会  2019.11 

Silicon doping and N2 ambient annealing effects on Zn3N2 thin film transistors

Kaiwen Li, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Dong Lin, Jinhua Ren, Qun Zhang

薄膜材料デバイス研究会 第16回研究集会「新時代に向けた薄膜材料のデバイス技術」  2019.11 

アモルファス酸化物半導体を用いた新規デバイスの開拓

井手啓介, 金正煥, 片瀬貴義, 細野秀雄, 神谷利夫

薄膜材料デバイス研究会 第16回研究集会「新時代に向けた薄膜材料のデバイス技術」  2019.11 

Structures and Electronic States of Hydrogen in Inorganic Semiconductors with Different Anions International conference

Toshio Kamiya, Xinyi He, Zewen Xiao, Keisuke Ide, Takayoshi Katase, Hideo Hosono

Materials Research Meeting 2019  2019.12 

Hydrogen doping in ultra-widegap amorphous oxide semiconductor, amorphous Ga-O International conference

Keisuke Ide, Yurika Kasai, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

Materials Research Meeting 2019  2019.12 

Expansion of Ba and Ca solubility limit into SrSi2 thin film and their thermoelectric properties International conference

Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo

2019 MRS Fall Meeting & Exhibit  2019.12 

希土類添加アモルファス酸化物蛍光体薄膜の作製と発光素子への応用

井手啓介, 渡邉脩人, 片瀬貴義, 笹瀬雅人, 金正煥, 上田茂典, 堀場弘司, 組頭広志, 平松秀典, 細野秀雄, 神谷利夫

日本セラミックス協会 第39回電子材料研究討論会  2019.11 

Single crystal growth and intrinsic electron mobility of cubic SrGeO3 International conference

Christian A. Niedermeier, Yu Kumagai, Keisuke Ide, Takayoshi Katase, Fumiyasu Oba, Hideo Hosono, Toshio Kamiya

Materials Research Meeting 2019  2019.12 

Enhanced thermoelectric power-factors by strain control in stongly correlated lanthunum titanate International conference

Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

Materials Research Meeting 2019  2019.12 

Density Functional Study on Defects and Doping for Layered Ternary Nitride, SrTiN2 International conference

Xinyi He, Zewen Xiao, Takayoshi Katase, Keisuke Ide, Hideo Hosono, Toshio Kamiya

Materials Research Meeting 2019  2019.12 

Structural phase transition and opto-electronic properties of oxide semiconductor solid solution, (Ba,Sr)(Sn,Ti)O3 International conference

Yutaro Kobayashi, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

Materials Research Meeting 2019  2019.12 

トレードオフの相関を破る酸化物熱電材料の高出力特性

片瀬貴義, 樋口雄飛, 只野 央将, 藤岡 淳, 井手 啓介, 平松 秀典, 細野 秀雄, 神谷 利夫

応用物理学会新領域、第10回強的秩序とその操作に関わる研究グループ研究会  2020.1 

Light emitting diodes on glass using amorphous oxide semiconductor thin-film phosphors, rare-earth doped a-Ga-O International conference

Naoto Watanabe, Keisuke Ide, Takayoshi Katase, Junghwan Kim, Shigenori Ueda, Koji Horiba, Hiroshi Kumigashira, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

Materials Research Meeting 2019  2019.12 

Epitaxial structure and phonon-drag thermoelectric properties of FeSb2 thin film on SrTiO3 (001) substrate International conference

Chihiro Yamamoto, Kota Hanzawa, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11)  2019.7 

Structural phase transition and optoelectronic properties of Ba(Sn,Ce)O3 oxide semiconductor solid-solution system International conference

Yutaro Kobayashi, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11)  2019.7 

Density functional study on intrinsic and impurity defect formation in layered SrTiN2

Xinyi He, Zewen Xiao, Takayoshi Katase, Keisuke Ide, Hideo Hosono, Toshio Kamiya

第66回応用物理学会春季学術講演会  2019.3 

共スパッタ法で作製したBaxSr1-xSi2膜の熱電特性

青山 航大, 清水 荘雄, 倉持 豪人, 召田 雅実, 秋池 良, 井手 啓介, 片瀬 貴義, 神谷 利夫, 木村 好里, 舟窪 浩

第66回応用物理学会春季学術講演会  2019.3 

アモルファス酸化物半導体薄膜トランジスタの希土類添加効果

西間木祐紀, 井手啓介, 渡邉脩人, 金正煥, 片瀬貴義, 平松秀典, 細野秀雄, 神谷利夫

第57回セラミックス基礎科学討論会  2019.1 

共スパッタ法で作製したBaxSr1-xSi2膜の作製と熱電特性評価

青山航大, 清水荘雄, 倉持豪人, 召田雅実, 秋池良, 井手啓介, 片瀬貴義, 神谷利夫, 木村好里, 舟窪 浩

第57回セラミックス基礎科学討論会  2019.1 

Intrinsic and Extrinsic Defects in Layered Nitride Semiconductor", SrTiN2 International conference

Xinyi He, Zewen Xiao, Takayoshi Katase, Keisuke Ide, Hideo Hosono, Toshio Kamiya

The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11)  2019.7 

Transition Metal-Doped Amorphous Oxide Semiconductor Thin-Film Phosphor, Chromium-Doped Amorphous Gallium Oxide International conference

Keisuke Ide, Yuki Futakado, Naoto Watanabe, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11)  2019.7 

アモルファス酸化ガリウムへの水素ドープ効果とキャリア輸送特性

笠井悠莉華, 井手啓介, 片瀬貴義, 平松 秀典, 細野 秀雄, 神谷 利夫

第66回応用物理学会春季学術講演会  2019.3 

アモルファス酸化物半導体a-GaOxをホストとする蛍光体を用いた直流駆動型発光素子の低温作製

渡邉脩人, 井手啓介, 片瀬貴義, 笹瀬雅人, 戸田喜丈, 金正煥, 上田茂典, 堀場弘司, 組頭広志, 平松秀典, 細野秀雄, 神谷利夫

第66回応用物理学会春季学術講演会  2019.3 

Power-factor enhancement by breaking trade-off relation of thermopower and electrical conductivity in epitaxially strained lanthanum nickelate International conference

Yuhi Higuchi, Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11)  2019.7 

Epitaxial structure and phonon-drag thermoelectric properties of strain controlled LaNiO3 thin films International conference

Takayoshi Katase, Yuhi Higuchi, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

The 4th International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-4)  2019.10 

Low-temperature fabrication of direct-current driven electroluminescent device using amorphous oxide semiconductor thin-film phosphor International conference

Naoto Watanabe, Keisuke Ide, Takayoshi Katase, Junghwan Kim, Shigenori Ueda, Koji Horiba, Hiroshi Kumigashira, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11)  2019.7 

SrGeO3 single crystal growth and optical phonon spectrum analysis International conference

Christian A. Niedermeier, Yu Kumagai, Keisuke Ide, Takayoshi Katase, Fumiyasu Oba, Hideo Hosono, Toshio Kamiya

The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11)  2019.7 

Hydrogen doping and carrier transport properties of amorphous Ga-O International conference

Yurika Kasai, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11)  2019.7 

Epitaxial strain-induced enhancement of thermoelectric power-factors International conference

Takayoshi Katase, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

The 11th International Conference on the Science and Technology for Advanced Ceramics (STAC-11)  2019.7 

Temperature dependence of thermoelectric properties of Ge1−xSnx layers grown by molecular beam epitaxy International conference

Masashi Kurosawa, Masaya Nakata, Keisuke Ide, Takayoshi Katase, Toshio Kamiya

The 4th International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-4)  2019.10 

Effect of hydrogen plasma treatment for ultra-wide bandgap amorphous oxide semiconductor, amorphous Ga-O International conference

Keisuke Ide, Yurika Kasai, Kosuke Takenaka, Yuichi Setsuhara, Atsushi Hiraiwa, Hiroshi Kawarada, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

The 4th International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development (iLIM-4)  2019.10 

二元同時スパッタ法で作製したAeSi2膜の作製

青山 航大, 清水 荘雄, 倉持 豪人, 召田 雅実, 秋池 良, 井手 啓介, 片瀬 貴義, 神谷 利夫, 木村 好里, 舟窪 浩

第80回応用物理学会秋季学術講演会  2019.9 

Thermoelectric property of MxSr1-xSi2 (M = Ca, Ba) film prepared by co-sputtering method International conference

Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo

The Fifth Asia-Pacific Conference on Semiconducting Silicates and Related Materials  2019.7 

Liquid crystal display panel and method for producing same

Semiconductor device including a silicon nitride dielectric layer and method for producing same

Semiconductor device including a plurality of thin-film transistors with one thin-film transistor including two gate electrodes

Semiconductor device

Semiconductor apparatus, method of manufacturing same, and liquid crystal display apparatus

2020年度 フロンティア材料研究所 若手研究者発表会 優秀講演賞

2021.1  

2019年度 フロンティア材料研究所 若手研究者発表会 優秀講演賞

2019.11  

2018年度 フロンティア材料研究所 若手研究者発表会 優秀講演賞

2019.3  

第15回研究集会 スチューデントアワード

2018.11   薄膜材料デバイス研究会  

第43回 応用物理学会 講演奨励賞

2018.3  

2017年度 フロンティア材料研究所 若手研究者発表会 優秀講演賞

2017.12  

ICMaSS 2017: Outstanding Presentation Awards

2017.9  

Best Presentation Award

2017.9   2nd International Symposium on Creation of Life Innovation Materials for Interdisciplinary and International Researcher Develpment  

第78回応用物理学会学術講演会

2017.9   応用物理学会学術講演会  

Silver Poster Award

2017.6   10th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics  

若手研究者発表会優秀講演賞

2017   平成29年度フロンティア材料研究所  

ECS Japan Section| Young Researcher Award

2016.7  

Poster Paper Award

2016.2   International Thin-Film Transistor Conference  

第12回研究集会 スチューデントアワード

2015.10   薄膜材料デバイス研究会  

New evolution of materials concept and application of electrides

Grant number：17H06153  2017.5 - 2022.3

Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (S)  Grant-in-Aid for Scientific Research (S)

Hosono Hideo

Bistability/instability of amorphous oxide semiconductor, and its application development

Grant number：15H06207  2015.8 - 2017.3

Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Research Activity start-up  Grant-in-Aid for Research Activity start-up

KEISUKE IDE