Updated on 2025/10/22

写真a

 
KATASE TAKAYOSHI
 
Organization
Institute of Integrated Research Materials and Structures Laboratory Professor
Title
Professor
Contact information
メールアドレス
External link

News & Topics

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Degree

  • PhD ( Tokyo Institute of Technology )

Research Interests

  • Superconductivity

  • New material development

  • Solid state chemistry

  • Electrochemistry

  • Thin film growth

  • Electronic device

  • Phase change memory

  • Power electronics

  • Light emitting material

  • Oxide electronics

  • Photoelectric conversion

  • Optical sensor

  • Thermoeletric material

  • Thermal Engineering

Research Areas

  • Nanotechnology/Materials / Thin film/surface and interfacial physical properties

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

  • Nanotechnology/Materials / Inorganic materials and properties

  • Nanotechnology/Materials / Applied physical properties

Education

  • Tokyo Institute of Technology   Interdisciplinary Science and Engineering   Materials Science and Engineering

    2009.4 - 2012.3

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  • Tokyo Institute of Technology   Interdisciplinary Science and Engineering   Materials Science and Engineering

    2007.4 - 2009.3

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  • Tokyo Institute of Technology   School of Engineering   DEAPRTMENT OF INORGANIC MATERIALS

    2003.4 - 2007.3

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Research History

  • Institute of Science Tokyo   Materials and Structures Laboratory, Institute of Integrated Research   Professor

    2025.10

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  • Institute of Science Tokyo   MDX Research Center for Element Strategy , Institute of Integrated Research   Associate Professor (tenure)

    2025.9 - 2025.10

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  • Institute of Science Tokyo   MDX Research Center for Element Strategy , Institute of Integrated Research   Associate Professor

    2024.10 - 2025.9

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  • Tokyo Institute of Technology   MDX Research Center for Element Strategy, International Research Frontiers Initiative   Associate Professor

    2023.4 - 2024.10

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  • Tokyo Institute of Technology   Institute of Innovative Research, Laboratory for Materials and Structures   Associate Professor

    2017.4 - 2023.3

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  • PREST, JST   Scientific Innovation for Energy Harvesting Technology   Researcher

    2016.10 - 2020.3

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  • Research Institute for Electronic Science, Hokkaido University   Assistant Professor

    2013.4 - 2017.3

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  • Tokyo Institute of Technology   Frontier Research Center   Postdoctoral Fellow

    2012.4 - 2013.3

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Professional Memberships

  • The Minerals, Metals & Materials Society

    2023.6

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  • 米国セラミックス学会

    2023

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  • 日本磁気学会

    2021.3

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  • 日本熱電学会

    2020.8

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  • 応用物理学会 フォノンエンジニアリング研究グループ

    2017

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  • Materials Research Society

    2010

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  • THE JAPAN SOCIETY OF APPLIED PHYSICS

    2009.3

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  • THE CERAMIC SOCIETY OF JAPAN

    2007.4

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Committee Memberships

  • 日本磁気学会 化合物新磁性材料専門研究会   世話人  

    2025.4   

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    Committee type:Academic society

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  • 応用物理学会   機関誌 外部記者  

    2025.4   

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    Committee type:Academic society

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  • American Ceramic Society   Symposium organizer, Energy Materials for Sustainable Development, Materials Science & Technology 2025  

    2024.12   

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    Committee type:Academic society

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  • Energy Materials and Systems Division, Americal Ceramic Society   Program committee  

    2024.11   

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    Committee type:Academic society

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  • ICT/ACT 2025 (The 41st International and 7th Asian Conference on Thermoelectrics)   会計委員  

    2024.10   

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  • 11th International Congress on Ceramics   Symposium organizer  

    2024.9   

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    Committee type:Academic society

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  •   日韓国際セラミックスセミナー組織委員会  

    2024.6   

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    Committee type:Academic society

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  • American Ceramic Society   ICACC25 SYMPOSIUMU 4 Organizer  

    2024.5   

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    Committee type:Academic society

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  • American Ceramic Society   PacRim 16 Session organizer  

    2024.3   

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    Committee type:Academic society

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  • 応用物理学会   機関誌企画・編集委員  

    2023.4 - 2025.3   

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  • 日本セラミックス協会電子材料部会   電子材料研究討論会主査  

    2023.4 - 2023.11   

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    Committee type:Academic society

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  • 日本セラミックス協会   秋季シンポジウム オーガナイザー  

    2023   

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  • 日本熱電学会   学会誌編集委員  

    2022.10   

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  • 日本磁気学会   学術講演会シンポジウムオーガナイザー  

    2022.9   

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  • 日本磁気学会 化合物新磁性材料専門研究会   会計幹事  

    2021.3 - 2025.3   

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    Committee type:Academic society

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  • 日本セラミックス協会 電子材料部会   幹事  

    2019.7   

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Papers

  • Inverse‐Perovskite Ba3BO (B = Si and Ge) as a High Performance Environmentally Benign Thermoelectric Material with Low Lattice Thermal Conductivity Reviewed

    Xinyi He, Shigeru Kimura, Takayoshi Katase, Terumasa Tadano, Satoru Matsuishi, Makoto Minohara, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya

    Advanced Science   - 2307058   2023.12

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    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/advs.202307058

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  • Hydride Anion Substitution Boosts Thermoelectric Performance of Polycrystalline SrTiO 3 via Simultaneous Realization of Reduced Thermal Conductivity and High Electronic Conductivity Reviewed

    Xinyi He, Seiya Nomoto, Takehito Komatsu, Takayoshi Katase, Terumasa Tadano, Suguru Kitani, Hideto Yoshida, Takafumi Yamamoto, Hiroshi Mizoguchi, Keisuke Ide, Hidenori Hiramatsu, Hitoshi Kawaji, Hideo Hosono, Toshio Kamiya

    Advanced Functional Materials   2023.4

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    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/adfm.202213144

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  • Degenerated Hole Doping and Ultra-Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution Reviewed

    Xinyi He, Haoyun Zhang, Takumi Nose, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    ADVANCED SCIENCE   9 ( 13 )   2022.5

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/advs.202105958

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  • Electronic and Lattice Thermal Conductivity Switching by 3D-2D Crystal Structure Transition in Nonequilibrium (Pb1-xSnx)Se Reviewed

    Yusaku Nishimura, Xinyi He, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Suguru Kitani, Kota Hanzawa, Shigenori Ueda, Hidenori Hiramatsu, Hitoshi Kawaji, Hideo Hosono, Toshio Kamiya

    ADVANCED ELECTRONIC MATERIALS   2022.3

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/aelm.202200024

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  • Breaking of Thermopower-Conductivity Trade-Off in LaTiO3 Film around Mott Insulator to Metal Transition Reviewed

    Takayoshi Katase, Xinyi He, Terumasa Tadano, Jan M. Tomczak, Takaki Onozato, Keisuke Ide, Bin Feng, Tetsuya Tohei, Hidenori Hiramatsu, Hiromichi Ohta, Yuichi Ikuhara, Hideo Hosono, Toshio Kamiya

    ADVANCED SCIENCE   8 ( 23 )   2021.12

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/advs.202102097

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  • Large phonon drag thermopower boosted by massive electrons and phonon leaking in LaAlO3/LaNiO3/LaAlO3 heterostructure Reviewed

    Masatoshi Kimura, Xinyi He, Takayoshi Katase, Terumasa Tadano, Jan M. Tomczak, Makoto Minohara, Ryotaro Aso, Hideto Yoshida, Keisuke Ide, Shigenori Ueda, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya

    Nano Letters   21 ( 21 )   9240 - 9246   2021.11

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:American Chemical Society (ACS)  

    DOI: 10.1021/acs.nanolett.1c03143

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  • Reversible 3D-2D structural phase transition and giant electronic modulation in non-equilibrium alloy semiconductor, lead-tin-selenide Reviewed

    Takayoshi Katase, Yudai Takahashi, Xinyi He, Terumasa Tadano, Keisuke Ide, Hideto Yoshida, Shiro Kawachi, Jun-ichi Yamaura, Masato Sasase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    Science Advances   7 ( 12 )   eabf2725 - eabf2725   2021.3

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    Authorship:Lead author   Publishing type:Research paper (scientific journal)   Publisher:American Association for the Advancement of Science (AAAS)  

    Material properties depend largely on the dimensionality of the crystal structures and the associated electronic structures. If the crystal-structure dimensionality can be switched reversibly in the same material, then a drastic property change may be controllable. Here, we propose a design route for a direct three-dimensional (3D) to 2D structural phase transition, demonstrating an example in (Pb1−<italic>x</italic>Sn<italic>x</italic>)Se alloy system, where Pb2+ and Sn2+ have similar <italic>n</italic>s2 pseudo-closed shell configurations, but the former stabilizes the 3D rock-salt-type structure while the latter a 2D layered structure. However, this system has no direct phase boundary between these crystal structures under thermal equilibrium. We succeeded in inducing the direct 3D-2D structural phase transition in (Pb1−<italic>x</italic>Sn<italic>x</italic>)Se alloy epitaxial films by using a nonequilibrium growth technique. Reversible giant electronic property change was attained at <italic>x</italic> ~ 0.5 originating in the abrupt band structure switch from gapless Dirac-like state to semiconducting state.

    DOI: 10.1126/sciadv.abf2725

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  • Double Charge Polarity Switching in Sb‐Doped SnSe with Switchable Substitution Sites Reviewed

    Chihiro Yamamoto, Xinyi He, Takayoshi Katase, Keisuke Ide, Yosuke Goto, Yoshikazu Mizuguchi, Akane Samizo, Makoto Minohara, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    Advanced Functional Materials   ( 202008092 )   2008092 - 2008092   2020.12

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    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)   Publisher:Wiley  

    DOI: 10.1002/adfm.202008092

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  • Reversibly Switchable Electromagnetic Device with Leakage-Free Electrolyte Reviewed

    Takayoshi Katase, Yuki Suzuki, Hiromichi Ohta

    ADVANCED ELECTRONIC MATERIALS   2 ( 6 )   1600044   2016.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/aelm.201600044

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  • A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry Reviewed

    Takayoshi Katase, Takaki Onozato, Misako Hirono, Taku Mizuno, Hiromichi Ohta

    SCIENTIFIC REPORTS   6 ( 25819 )   2016.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/srep25819

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  • Electric double-layer transistor using layered iron selenide Mott insulator TlFe1.6Se2 Reviewed

    Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

    Proc. Natl. Acad. Sci. USA   111 ( 11 )   3979 - 3983   2014.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1073/pnas.1318045111

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  • Advantageous grain boundaries in iron pnictide superconductors Reviewed

    Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Hidenori Hiramatsu, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono

    NATURE COMMUNICATIONS   2   409   2011.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/ncomms1419

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  • Biaxially textured cobalt-doped BaFe2As2 films with high critical current density over 1 MA/cm(2) on MgO-buffered metal-tape flexible substrates Reviewed

    Takayoshi Katase, Hidenori Hiramatsu, Vladimir Matias, Chris Sheehan, Yoshihiro Ishimaru, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono

    APPLIED PHYSICS LETTERS   98 ( 24 )   242510   2011.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.3599844

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  • d0 Cation-Based Spinel-Type Sulfide Semiconductors with Color-Tunable Direct-Gap and Ambipolar Dopability

    Kota Hanzawa, Takayuki Nagai, Ryoga Nagasawa, Takayoshi Katase, Hideo Hosono, Hidenori Hiramatsu

    Journal of the American Chemical Society   2025.9

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/jacs.5c12816

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  • High Power Factor with Compositional and Temperature Stabilities in (CaxSr1–x)Si2 Thin Films near Room Temperature

    Kodai Aoyama, Takao Shimizu, Takayoshi Katase, Yoshisato Kimura, Hiroshi Funakubo

    ACS Applied Energy Materials   2025.8

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsaem.5c01558

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  • Strong Phonon Scattering and Enhanced Thermoelectric Performance in SrTiO3 Polycrystals by Simultaneous Hydrogen Substitution and Oxygen Vacancy Formation

    Xinyi He, Takehito Komatsu, Takayoshi Katase, Terumasa Tadano, Takashi Honda, Masayoshi Miyazaki, Masaaki Kitano, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    ACS Applied Energy Materials   2025.7

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsaem.5c01610

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  • Nanoscale Origin of Strong Charge Carrier Scattering at Grain Boundaries in Orthorhombic SnSe Semiconductor Thin Films

    Xinyi He, Kenji Matsuo, Takayoshi Katase, Kota Hanzawa, Hideto Yoshida, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    ACS Applied Nano Materials   2025.4

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsanm.5c00686

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  • Phase Diagram and Growth Mechanism of Rutile-Type GeO2 Epitaxial Film on c-Plane Sapphire Substrate

    Tomoya Suzuki, Kaname Sakaban, Takayoshi Katase, Hideto Yoshida, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    ACS Applied Nano Materials   2025.4

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsanm.5c01137

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  • Thermoelectric performance enhancement of environmentally‐friendly SrTiO3 epitaxial films by hydrogen substitution

    Masatoshi Kimura, Masahiro Ochiai, Xinyi He, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    EcoEnergy   2024.12

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/ece2.89

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  • Enhancement of n-type electronic conductivity in bismuth iron borate glasses by fluorine addition

    Kazuki Mitsui, Riko Matsumoto, Masami Mori, Zhongxu Hu, Takayoshi Katase, Hidenori Hiramatsu, Akira Saitoh

    Journal of Applied Physics   2024.12

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0232888

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  • Nonequilibrium Layered PbS Stabilized by Sn Doping: Bipolar Semiconductors with Low Thermal Conductivity

    Mari Hiramatsu, Zhongxu Hu, Sakura Yoshikawa, Zan Yang, Xinyi He, Takayoshi Katase, Jun-ichi Yamaura, Hajime Sagayama, Terumasa Tadano, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    ACS Applied Electronic Materials   2024.11

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsaelm.4c01572

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  • Stabilization and high thermoelectric performance of high-entropy-type cubic AgBi(S, Se, Te)2

    Asato Seshita, Aichi Yamashita, Takeshi Fujita, Takayoshi Katase, Akira Miura, Yuki Nakahira, Chikako Moriyoshi, Yoshihiro Kuroiwa, Yoshikazu Mizuguchi

    Journal of Alloys and Compounds   1004   175679 - 175679   2024.11

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    Publishing type:Research paper (scientific journal)   Publisher:Elsevier BV  

    DOI: 10.1016/j.jallcom.2024.175679

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  • Simultaneous Realization of Single-Crystal-Like Electron Transport and Strong Phonon Scattering in Polycrystalline SrTiO3–xHx

    Takayoshi Katase, Seiya Nomoto, Xinyi He, Suguru Kitani, Takashi Honda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    ACS Applied Electronic Materials   2024.10

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsaelm.4c01306

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  • Room‐Temperature Possible Current‐Induced Transition in Ca2RuO4 Thin Films Grown Through Intercalation‐Like Cation Diffusion in the A2BO4 Ruddlesden–Popper Structure

    Atsushi Fukuchi, Takayoshi Katase, Toshio Kamiya

    Small Methods   2024.9

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    Publishing type:Research paper (scientific journal)   Publisher:Wiley  

    Abstract

    Cation deficiency tuning is a central issue in thin‐film epitaxy of functional metal oxides, as it is typically more difficult than anion deficiency tuning, as anions can be readily supplied from gas sources. Here, highly effective internal deficiency compensation of Ru cations is demonstrated for Ca2RuO4 epitaxial films based on diffusive transfer of metal cations in the A2BO4 Ruddlesden–Popper lattice from solid‐phase cation sources. Through detailed structural characterization of Ca2RuO4/LaAlO3 (001) thin films grown with external cation sources by solid‐phase epitaxy, the occurrence of intercalation‐like, interstitial diffusion of La cations (from the substrates) in the A2BO4 structure is revealed, and that of Ru cations is also suggested. Relying on the interstitial‐type diffusion, an optimized Ru deficiency compensation method, which does not induce the formation of Can+1RunO3n+1 Ruddlesden–Popper impurity phases with higher n, is proposed for Ca2RuO4 epitaxial films. In the Ca2RuO4/LaAlO3 (001) thin films grown with Ru deficiency compensation, record‐high resistivity values (102–10−1 Ω cm) and a large (more than 200 K) increase in the temperature range of the nonlinear transport properties are demonstrated by transport measurements, demonstrating the possible advantages of this method in the control of the current‐induced quantum phase transition of Ca2RuO4.

    DOI: 10.1002/smtd.202400264

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  • Symmetry change in LaNiO3 films caused by epitaxial strain from LaAlO3, SrTiO3, and DyScO3 pseudocubic (001) surfaces

    Fumiya Izumisawa, Yuta Ishii, Masatoshi Kimura, Takayoshi Katase, Toshio Kamiya, Jun-ichi Yamaura, Yusuke Wakabayashi

    Journal of Applied Physics   2024.8

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0221417

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  • High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films

    Nana Sun, Kazuki Okamoto, Shinnosuke Yasuoka, Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Takayoshi Katase, Tomoyuki Koganezawa, Tomotaka Nakatani, Rosantha Kumara, Osami Sakata, Hiroshi Funakubo

    Applied Physics Letters   2024.7

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0202063

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  • Wide-Gap p-Type Layered Oxychalcogenides AE2CuInO3Ch (AE: Alkaline Earth; Ch: Chalcogen): Unusually Low Residual Carrier Concentration and Green-to-Red Emission Reviewed

    Xinyi He, Tatsuya Cho, Takayoshi Katase, Kota Hanzawa, Suguru Kitani, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    Chemistry of Materials   2024.6

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    Authorship:Corresponding author   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acs.chemmater.4c00724

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  • Phonon drag thermopower persisting over 200 K in FeSb2 thin film on SrTiO3 single crystal

    Chihiro Yamamoto, Xinyi He, Kota Hanzawa, Takayoshi Katase, Masato Sasase, Jun-ichi Yamaura, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    Applied Physics Letters   2024.5

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0204885

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  • Hydrogen-included plasma-assisted reactive sputtering for conductivity control of ultra-wide bandgap amorphous gallium oxide

    Kosuke TAKENAKA, Hibiki Komatsu, Taichi Sagano, Keisuke Ide, Susumu Toko, Takayoshi KATASE, Toshio Kamiya, Yuichi Setsuhara

    Japanese Journal of Applied Physics   2024.3

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ad364e

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  • Significant effects of epitaxial strain on the nonlinear transport properties in Ca2RuO4 thin films with the current-driven transition

    Keiji Tsubaki, Masashi Arita, Takayoshi Katase, Toshio Kamiya, Atsushi Tsurumaki-Fukuchi, Yasuo Takahashi

    Japanese Journal of Applied Physics   2024.1

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/acf2a3

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  • Carrier generation and compensation mechanism in La2SnO2S3

    Teruya Nagafuji, Koshiro Osuna, Kota Hanzawa, Tomoya Gake, Soungmin Bae, Zhongxu Hu, Takayoshi Katase, Akira Takahashi, Hidenori Hiramatsu, Fumiyasu Oba

    Journal of Materials Chemistry C   2024

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    Publishing type:Research paper (scientific journal)   Publisher:Royal Society of Chemistry (RSC)  

    A combined computational and experimental study of La2SnO2S3 reveals carrier generation and compensation mechanisms associated with its moderate n-type conductivity, where hydrogen impurities and electron self-trapping play crucial roles.

    DOI: 10.1039/d4tc01116c

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  • High entropy effect on thermoelectric properties of the nonequilibrium cubic phase of AgBiSe2−2xSxTex with x = 0–0.6

    Asato Seshita, Aichi Yamashita, Takayoshi Katase, Yoshikazu Mizuguchi

    Dalton Transactions   53 ( 35 )   14830 - 14838   2024

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    Publishing type:Research paper (scientific journal)   Publisher:Royal Society of Chemistry (RSC)  

    The stabilization of the cubic structure of high-entropy-type AgBiSe2 was achieved using quenching technique. Thermoelectric performance was enhanced owing to the simultaneous electronic conductivity increase and thermal conductivity reduction.

    DOI: 10.1039/d4dt01317d

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  • Superconductivity in In-doped AgPbBiTe<inf>3</inf> compounds synthesized by high-pressure synthesis

    Takahiro Sawahara, Hiroto Arima, Takayoshi Katase, Aichi Yamashita, Ryuji Higashinaka, Yoshikazu Mizuguchi

    Physica C: Superconductivity and its Applications   612   2023.9

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.physc.2023.1354308

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  • Effect of iron substitution on electronic conductivity of bismuth sesquioxide glasses

    Kazuki Mitsui, Zhongxu Hu, Kota Hanzawa, Takayoshi Katase, Hidenori Hiramatsu, Akira Saitoh

    Journal of Applied Physics   2023.8

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0149523

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  • Buffer-free epitaxial growth of ZnO(0001) thin films at room temperature by tetramethylammonium hydroxide pretreatment of α-Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt;(0001) substrates

    Kenta Kaneko, Tomoaki Oga, Satoru Kaneko, Takayoshi Katase, Mamoru Yoshimoto, Akifumi Matsuda

    Journal of the Ceramic Society of Japan   131 ( 8 )   383 - 388   2023.8

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    Publishing type:Research paper (scientific journal)   Publisher:Ceramic Society of Japan  

    DOI: 10.2109/jcersj2.23022

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  • Enhanced Thermoelectric Properties of SrSi2 Composite Films with Cubic and Layered Polymorphs

    Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Takayoshi Katase, Yoshisato Kimura, Hiroshi Funakubo

    ACS Applied Energy Materials   2023.6

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsaem.3c00577

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  • Dynamics of an Electrically Driven Phase Transition in Ca2RuO4 Thin Films: Nonequilibrium High‐Speed Resistive Switching in the Absence of an Abrupt Thermal Transition

    Keiji Tsubaki, Atsushi Tsurumaki‐Fukuchi, Takayoshi Katase, Toshio Kamiya, Masashi Arita, Yasuo Takahashi

    Advanced Electronic Materials   2023.4

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    Publishing type:Research paper (scientific journal)   Publisher:Wiley  

    DOI: 10.1002/aelm.202201303

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  • Reversible Thermal Conductivity Modulation of Non-equilibrium (Sn1–xPbx)S by 2D–3D Structural Phase Transition above Room Temperature

    Zhongxu Hu, Mari Hiramatsu, Xinyi He, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    ACS Applied Energy Materials   2023.3

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsaem.3c00060

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  • Direct Imaging of Ion Migration in Amorphous Oxide Electronic Synapses with Intrinsic Analog Switching Characteristics

    Atsushi Tsurumaki-Fukuchi, Takayoshi Katase, Hiromichi Ohta, Masashi Arita, Yasuo Takahashi

    ACS Applied Materials &amp; Interfaces   15 ( 13 )   16842 - 16852   2023.3

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  • Efficient electrocatalytic H2O2 evolution utilizing electron-conducting molecular wires spatially separated by rotaxane encapsulation

    Sheng-Ying Chou, Hiroshi Masai, Masaya Otani, Hiromichi V. Miyagishi, Gentaro Sakamoto, Yusuke Yamada, Yusuke Kinoshita, Hitoshi Tamiaki, Takayoshi Katase, Hiromichi Ohta, Tomoki Kondo, Akinobu Nakada, Ryu Abe, Takahisa Tanaka, Ken Uchida, Jun Terao

    Applied Catalysis B: Environmental   122373 - 122373   2023.1

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    DOI: 10.1016/j.apcatb.2023.122373

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  • High-critical temperature iron-based superconductor epitaxial films for expanding the potential applications

    Takayoshi Katase

    Superconductor Science and Technology   2022.12

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    DOI: 10.1088/1361-6668/ac9e24

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  • Low-temperature-processable amorphous-oxide-semiconductor-based phosphors for durable light-emitting diodes Reviewed

    Keisuke Ide, Naoto Watanabe, Takayoshi Katase, Masato Sasase, Junghwan Kim, Shigenori Ueda, Koji Horiba, Hiroshi Kumigashira, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    Applied Physics Letters   121 ( 19 )   2022.11

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    DOI: 10.1063/5.0115384

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  • Unique Conduction Band Minimum of Semiconductors Possessing a Zincblende-Type Framework

    Hiroshi Mizoguchi, Sang-Won Park, Takayoshi Katase, Jiahao Yu, Junjie Wang, Hideo Hosono

    Inorganic Chemistry   2022.6

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    DOI: 10.1021/acs.inorgchem.2c00884

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  • Elastic and Inelastic Spin Transport in SrTiO3-based Magnetic Heterostructure Reviewed

    Nozomi Soya, Takayoshi Katase, Kazuya Ando

    ADVANCED ELECTRONIC MATERIALS   202200232   2022.5

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  • Repeatable Photoinduced Insulator-to-Metal Transition in Yttrium Oxyhydride Epitaxial Thin Films

    Yuya Komatsu, Ryota Shimizu, Ryuhei Sato, Markus Wilde, Kazunori Nishio, Takayoshi Katase, Daiju Matsumura, Hiroyuki Saitoh, Masahiro Miyauchi, Jonah R. Adelman, Ryan M. L. McFadden, Derek Fujimoto, John O. Ticknor, Monika Stachura, Iain McKenzie, Gerald D. Morris, W. Andrew MacFarlane, Jun Sugiyama, Katsuyuki Fukutani, Shinji Tsuneyuki, Taro Hitosugi

    Chemistry of Materials   34 ( 8 )   3616 - 3623   2022.4

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    DOI: 10.1021/acs.chemmater.1c03450

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  • High-Mobility Metastable Rock-Salt Type (Sn,Ca)Se Thin Film Stabilized by Direct Epitaxial Growth on a YSZ (111) Single-Crystal Substrate Reviewed

    Xinyi He, Jinshuai Chen, Takayoshi Katase, Makoto Minohara, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya

    ACS Appl. Mater. Interfaces   14 ( 16 )   18682 - 18689   2022.4

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    DOI: 10.1021/acsami.2c01464

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  • Photoinduced transient states of antiferromagnetic orderings in La1/3Sr2/3FeO3 and SrFeO3−δ thin films observed through time-resolved resonant soft x-ray scattering Reviewed

    Kohei Yamamoto, Tomoyuki Tsuyama, Suguru Ito, Kou Takubo, Iwao Matsuda, Niko Pontius, Christian Schüßler-Langeheine, Makoto Minohara, Hiroshi Kumigashira, Yuichi Yamasaki, Hironori Nakao, Youichi Murakami, Takayoshi Katase, Toshio Kamiya, Hiroki Wadati

    New Journal of Physics   24 ( 4 )   043012   2022.4

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  • Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn3N2 Films on a Glass Substrate Reviewed

    Kaiwen Li, Atsushi Shimizu, Xinyi He, Keisuke Ide, Kota Hanzawa, Kosuke Matsuzaki, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Qun Zhang, Toshio Kamiya

    ACS Appl. Electron. Mater.   4 ( 4 )   2026 - 2031   2022.4

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    DOI: 10.1021/acsaelm.2c00181

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  • Design, Synthesis, and Optoelectronic Properties of the High-Purity Phase in Layered AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf) Semiconductors Reviewed

    Akihiro Shiraishi, Shigeru Kimura, Xinyi He, Naoto Watanabe, Takayoshi Katase, Keisuke Ide, Makoto Minohara, Kosuke Matsuzaki, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya

    Inorg. Chem.   61 ( 17 )   6650 - 6659   2022.4

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    DOI: 10.1021/acs.inorgchem.2c00604

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  • Effect of intentional chemical doping on crystallographic and electric properties of the pyrochlore Bi2Sn2O7 Reviewed

    Makoto Minohara, Naoto Kikuchi, Kouhei Tsukuda, Yuka Dobashi, Akane Samizo, Keishi Nishio, Xinyi He, Takayoshi Katase, Toshio Kamiya, Yoshihiro Aiura

    Materials & Design   216   110549   2022.3

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  • Tuning of Hole Carrier Density in p-type α-SnWO4 by Exploiting Oxygen Defects

    Makoto Minohara, Makoto Minohara, Yuka Dobashi, Naoto Kikuchi, Akane Samizo, Takashi Honda, Xinyi He, Takayoshi Katase, Toshio Kamiya, Keishi Nishio, Yoshihiro Aiura

    Materials Advances   3 ( 24 )   9111 - 9116   2022

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    <jats:p>The development of p-type oxide semiconductors has shown promise in overcoming limitations restricting the practical usage of oxide semiconductors and the realization of innovative functional devices. Through numerous studies based...</jats:p>

    DOI: 10.1039/d2ma00815g

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  • Superconductivity in In-doped AgSnBiTe3 with possible band inversion Reviewed

    Tsubasa Mitobe, Kazuhisa Hoshi, Md. Riad Kasem, Ryosuke Kiyama, Hidetomo Usui, Aichi Yamashita, Ryuji Higashinaka, Tatsuma D. Matsuda, Yuji Aoki, Takayoshi Katase, Yosuke Goto, Yoshikazu Mizuguchi

    Scientific Reports   11   22885   2021.11

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  • (Invited) Nanoscale Probing of Field-Driven Ion Migration in TaOx for Neuromorphic Memristor Applications

    Atsushi Tsurumaki-Fukuchi, Takayoshi Katase, Hiromichi Ohta, Masashi Arita, Yasuo Takahashi

    ECS Transactions   104 ( 4 )   93 - 101   2021.10

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    DOI: 10.1149/10404.0093ecst

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  • Ion substitution effect on defect formation in two-dimensional transition metal nitrides semiconductor, AETiN2 (AE = Ca, Sr, Ba) Reviewed

    Xinyi He, Takayoshi Katase, Keisuke Ide, Hideo Hosono, Toshio Kamiya

    Inorg. Chem.   60 ( 14 )   10227 - 10234   2021.7

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    DOI: 10.1021/acs.inorgchem.1c00526

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  • Publisher's Note: “Hard x-ray photoemission study on strain effect in LaNiO3 thin films” [Appl. Phys Lett. 118, 161601 (2021)]

    K. Yamagami, K. Ikeda, A. Hariki, Y. Zhang, A. Yasui, Y. Takagi, Y. Hotta, T. Katase, T. Kamiya, H. Wadati

    Applied Physics Letters   2021.6

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    DOI: 10.1063/5.0055404

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  • Hard x-ray photoemission study on strain effect in LaNiO3 thin films Reviewed

    Kohei Yamagami, Keisuke Ikeda, Atushi Hariki, Yujun Zhang, Akira Yasui, Yasumasa Takagi, Takayoshi Katase, Toshio Kamiya, Hiroki Wadati

    Appl. Phys. Lett.   118 ( 16 )   161601 - 161601   2021.4

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    DOI: 10.1063/5.0044047

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  • 2D-3D structural phase transition and giant electronic property modulation of non-equilibrium (Pb1-xSnx)Se thin films

    Takahashi Yudai, Katase Takayoshi, He Xinyi, Tadano Terumasa, Ide Keisuke, Yoshida Hideto, Kawachi Shiro, Yamaura Junichi, Sasase Masato, Hiramatsu Hidenori, Hosono Hideo, Kamiya Toshio

    JSAP Annual Meetings Extended Abstracts   2021.1   1300 - 1300   2021.2

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    DOI: 10.11470/jsapmeeting.2021.1.0_1300

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  • Origin of metallic nature of Na3N Reviewed

    Hiroshi Mizoguchi, Sang-Won Park, Takayoshi Katase, Grigori V. Vajenine, Joonho Bang, Junghwan Kim, Hideo Hosono

    J. Am. Chem. Soc.   143 ( 1 )   69 - 72   2020.12

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    DOI: 10.1021/jacs.0c11047

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  • Substrate-independent energy-level pinning of an organic semiconductor provides versatile hole-injection electrodes Reviewed

    Tianshu Zhai, Rongbin Wang, Takayoshi Katase, Frances Quigley, Hiromichi Ohta, Patrick Amsalem, Norbert Koch, Steffen Duhm

    ACS Appl. Electron. Mater.   2 ( 12 )   3994 - 4001   2020.12

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    DOI: 10.1021/acsaelm.0c00823

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  • Shallow valence band of rutile GeO2 and p-type doping

    Christian A. Niedermeier, Keisuke Ide, Takayoshi Katase, Hideo Hosono, Toshio Kamiya

    J. Phys. Chem. C   124 ( 47 )   25721 - 25728   2020.11

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    DOI: 10.1021/acs.jpcc.0c07757

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  • Coexistence of magnetism and superconductivity in thin film of the Fe-based superconductor Ba1-xLaxFe2As2 Reviewed

    Yildirhan Oner, Cihat Boyraz, Hidenori Hiramatsu, Takayoshi Katase, Hideo Hosono

    J. Phys.: Condens. Mater   32   485804   2020.9

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    DOI: 10.1088/1361-648X/aba922

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  • p-Type Transparent Quadruple Perovskite Chloride Conductors: Fact or Fiction? Reviewed

    Sanlue Hu, Bing Xia, Yang-Peng Lin, Takayoshi Katase, Jun Fujioka, Toshio Kamiya, Hideo Hosono, Ke-Zhao Du, Zewen Xiao

    1909906   2020.6

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  • Stable and Tunable Current-Induced Phase Transition in Epitaxial Thin Films of Ca2RuO4 Reviewed

    Atsushi Tsurumaki-Fukuchi, Keiji Tsubaki, Takayoshi Katase, Toshio Kamiya, Masashi Arita, Yasuo Takahashi

    ACS Applied Materials & Interfaces   2020.5

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    DOI: 10.1021/acsami.0c05181

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  • Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO3 , BaSnO3 , and SrTiO3 Reviewed

    Christian A. Niedermeier, Yu Kumagai, Keisuke Ide, Takayoshi Katase, Fumiyasu Oba, Hideo Hosono, Toshio Kamiya

    Physical Review B   101 ( 12 )   125206   2020.3

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    DOI: 10.1103/physrevb.101.125206

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  • Large power-factor enhancement by breaking thermoelectric trade-off relation in transition metal oxide, LaNiO3

    Higuchi Yuhi, Katase Takayoshi, Terumasa Tadano, Jun Fujioka, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    JSAP Annual Meetings Extended Abstracts   2020.1   3583 - 3583   2020.2

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    DOI: 10.11470/jsapmeeting.2020.1.0_3583

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  • Arbitrary control of the diffusion potential between a plasmonic metal and a semiconductor by an angstrom-thick interface dipole layer Reviewed

    Tomoya Oshikiri, Hiroki Sawayanagi, Keisuke Nakamura, Kosei Ueno, Takayoshi Katase, Hiromichi Ohta, Hiroaki Misawa

    J. Chem. Phys.   152   934705   2020.1

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    DOI: 10.1063/1.5134900

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  • Thermoelectric (BaxSr1–x)Si2 films prepared by sputtering method over the barium solubility limit Reviewed

    K. Aoyama, T. Shimizu, H. Kuramochi, M. Mesuda, R. Akiike, K. Ide, T. Katase, T. Kamiya, Y. Kimura, H. Funakubo

    Japanese Journal of Applied Physics   59   SFFB02   2020.1

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    DOI: 10.7567/1347-4065/ab645b

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  • Fabrication and characterization of (CaxSr1-x)Si2 films prepared by co-sputtering method Reviewed

    K. Aoyama, T. Shimizu, H. Kuramochi, M. Mesuda, R. Akiike, K. Ide, T. Katase, T. Kamiya, Y. Kimura, H. Funakubo

    MRS Advances   5 ( 10 )   451 - 458   2020.1

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    DOI: 10.1557/adv.2020.67

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  • Surface charge accumulation and electrochemical protonation of transition metal oxides using water-infiltrated nanoporous glass Invited Reviewed

    Takayoshi Katase, Hiromichi Ohta

    Semiconductor Science and Technology   34   123001   2019.11

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    DOI: 10.1088/1361-6641/ab51b2

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  • Superconductivity at 48 K of heavily hydrogen-doped SmFeAsO epitaxial films grown by topotactic chemical reaction using Ca H2 Reviewed

    Jumpei Matsumoto, Kota Hanzawa, Masato Sasase, Silvia Haindl, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono

    Physical Review Materials   3 ( 10 )   103401   2019.10

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    DOI: 10.1103/PhysRevMaterials.3.103401

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  • New crystal structure built from a GeO6-GeO5 polyhedra network with high thermal stability: b-SrGe2O5 Reviewed

    Christian A. Niedermeier, Junichi Yamaura, Jiazhen Wu, Xinyi He, Takayoshi Katase, Hideo Hosono, Toshio Kamiya

    ACS Appl. Electron. Mater.   1 ( 10 )   1989 - 1993   2019.9

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    DOI: 10.1021/acsaelm.9b00552

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  • Symmetric Ambipolar Thin-Film Transistors and High-Gain CMOS-like Inverters Using Environmentally Friendly Copper Nitride Reviewed

    Kosuke Matsuzaki, Takayoshi Katase, Toshio Kamiya, Hideo Hosono

    ACS Appl. Mater. Interfaces   11 ( 38 )   35132 - 35137   2019.8

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    DOI: 10.1021/acsami.9b12068

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  • Intrinsic and Extrinsic Defects in Layered Nitride Semiconductor, SrTiN2 Reviewed

    X. He, Z. Xiao, T. Katase, K. Ide, H. Hosono, T. Kamiya

    The Journal of Physical Chemistry C   123 ( 32 )   35132 - 35137   2019.7

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    DOI: 10.1021/acs.jpcc.9b03643

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  • New Amorphous In-Ga-Zn-O Thin-Film Transistor-Based Optical Pixel Sensor for Optical Input Signal with Short Wavelength Reviewed

    Chia-En Wu, Keisuke Ide, Takayoshi Katase, Hidenori Hiramastu, Hideo Hosono, Chih-Lung Lin, Toshio Kamiya

    IEEE Transactions on Electron Devices   66   3841 - 3846   2019.7

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  • Multiple Color Inorganic Thin-Film Phosphor, RE-Doped Amorphous Gallium Oxide (RE = Rare Earth: Pr, Sm, Tb, and Dy), Deposited at Room Temperature

    Naoto Watanabe, Keisuke Ide, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   216 ( 5 )   2019.3

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    DOI: 10.1002/pssa.201700833

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  • Effects of Base Pressure on Growth and Optoelectronic Properties of Amorphous In-Ga-Zn-O: Ultralow Optimum Oxygen Supply and Bandgap Widening

    Keisuke Ide, Kyohei Ishikawa, Haochun Tang, Takayoshi Katase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   216 ( 5 )   2019.3

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    DOI: 10.1002/pssa.201700832

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  • Oxide-based optical, electrical, and magnetic properties switching devices with water-incorporated gate insulator Invited Reviewed

    Takayoshi Katase, Hiromichi Ohta

    Selected Topics in Applied Physics, Japan Journal of applied physics   58   090501   2019

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    DOI: 10.7567/1347-4065/ab02a5

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  • Transition metal-doped amorphous oxide semiconductor thin-film phosphor, chromium-doped amorphous gallium oxide Reviewed

    Keisuke Ide, Yuki Futakado, Naoto Watanabe, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    physica status solidi (a)   1800198   2018.8

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  • Plasmon-assisted polarity switching of a photoelectric conversion device by UV and visible light irradiation Reviewed

    Keisuke Nakamura, Tomoya Oshikiri, Kosei Ueno, Takayoshi Katase, Hiromichi Ohta, Hiroaki Misawa

    J. Phys. Chem. C   122   14064 - 14071   2018.4

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  • Stoichiometric and Oxygen-Deficient VO2 as Versatile Hole Injection Electrode for Organic Semiconductors Reviewed

    Keke Fu, Rongbin Wang, Takayoshi Katase, Hiromichi Ohta, Norbert Koch, Steffen Duhm

    ACS Applied Materials and Interfaces   10 ( 12 )   10552 - 10559   2018.3

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    DOI: 10.1021/acsami.8b00026

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  • Effects of impurity hydrogen in amorphous In-Ga-Zn-O: ultralow optimum oxygen supply for ultrahigh vacuum sputtering and bandgap widening by impurity hydrogen Reviewed

    Keisuke Ide, Kyohei Ishikawa, Haochun Tang, Takayoshi Katase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

    physica status solidi (a)   8   1700832   2018.2

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  • Multi-color light-emitting thin films based on ultra-wide bandgap amorphous oxide semiconductor deposited at room temperature on glass Reviewed

    Naoto Watanabe, Keisuke Ide, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    physica status solidi (a)   8   1700833   2018.1

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  • Directing Oxygen Vacancy Channels in SrFeO2.5 Epitaxial Thin Films Reviewed

    Amit Khare, Jaekwang Lee, Jaeseoung Park, Gi-Yeop Kim, Si-Young Choi, Takayoshi Katase, Seulki Roh, Tae Sup Yoo, Jungseek Hwang, Hiromichi Ohta, Junwoo Son, Woo Seok Choi

    ACS Applied Materials and Interfaces   10 ( 5 )   4831 - 4837   2018

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    DOI: 10.1021/acsami.7b17377

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  • Superconductivity in La1-xCexOBiSSe: Carrier doping by mixed valence of Ce ions Reviewed

    Ryota Sogabe, Yosuke Goto, Atsuhiro Nishida, Takayoshi Katase, Yoshikazu Mizuguchi

    Euro. Phys. Lett.   122   17004   2018

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  • Oxygen vacancies allow tuning the work function of vanadium dioxide Reviewed

    Rongbin Wang, Takayoshi Katase, Ke-Ke Fu, Tianshu Zhai, Jiacheng Yang, Qiankun Wang, Hiromichi Ohta, Norbert Koch, Steffen Duhm

    Adv. Mater. Interfaces   5   1801033   2018

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    DOI: 10.1002/admi.201801033

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  • Highly conducting leakage-free electrolyte for SrCoOx-based non-volatile memory device Reviewed

    Takayoshi Katase, Yuki Suzuki, Hiromichi Ohta

    JOURNAL OF APPLIED PHYSICS   122 ( 13 )   135303   2017.10

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    DOI: 10.1063/1.5005520

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  • Structure determination in thin film Ba1-xLaxFe2As2: Relation between the FeAs4 geometry and superconductivity Reviewed

    Kensuke Kobayashi, Akiko Nakao, Sachiko Maki, Jun-ichi Yamaura, Takayoshi Katase, Hikaru Sato, Hajime Sagayama, Reiji Kumai, Yoshio Kuramoto, Youichi Murakami, Hidenori Hiramatsu, Hideo Hosono

    PHYSICAL REVIEW B   96 ( 12 )   125116   2017.9

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    DOI: 10.1103/PhysRevB.96.125116

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  • Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate Reviewed

    Takayoshi Katase, Kenji Endo, Hiromichi Ohta

    APL MATERIALS   5 ( 5 )   056105   2017.5

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    DOI: 10.1063/1.4983276

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  • Reactive Solid-Phase Epitaxy and Electrical Conductivity of Layered Sodium Manganese Oxide Films Reviewed

    Shota Katayama, Takayoshi Katase, Tetsuya Tohei, Bin Feng, Yuichi Ikuhara, Hiromichi Ohta

    CRYSTAL GROWTH & DESIGN   17 ( 4 )   1849 - 1853   2017.4

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    DOI: 10.1021/acs.cgd.6b01810

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  • Thickness Dependence of Current-Induced Effective Magnetic Field in La0.67Sr0.33MnO3/SrTiO3 heterostructure

    Oyamada Tatsuro, Katase Takayoshi, Ohta Hiromichi, Yamanouchi Michihiko

    JSAP Annual Meetings Extended Abstracts   2017.1   2047 - 2047   2017.3

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    DOI: 10.11470/jsapmeeting.2017.1.0_2047

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  • Transition-metal-oxide based functional thin-film device using leakage-free electrolyte Invited Reviewed

    Takayoshi Katase, Hiromichi Ohta

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   125 ( 8 )   608 - 615   2017

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    DOI: 10.2109/jcersj2.17098

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  • Infrared-transmittance tunable metal-insulator switching device on a glass substrate Reviewed

    Takayoshi Katase, Kenji Endo, Hiromichi Ohta

    APL Materials   5 ( 056105 )   2017

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  • Solid-liquid phase epitaxial growth of Li4Ti5O12 thin film Reviewed

    Ning Li, Takayoshi Katase, Yanbei Zhu, Takao Matsumoto, Tomonari Umemura, Yuichi Ikuhara, Hiromichi Ohta

    APPLIED PHYSICS EXPRESS   9 ( 12 )   125501   2016.12

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  • Current-induced effects on switching magnetic field in La0.67Sr0.33MnO3/SrTiO3

    Yamanouchi Michihiko, Oyamada Tatsuro, Katase Takayoshi, Ohta Hiromichi

    JSAP Annual Meetings Extended Abstracts   2016.2   1933 - 1933   2016.9

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    DOI: 10.11470/jsapmeeting.2016.2.0_1933

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  • Optoelectronic properties of valence-state-controlled amorphous niobium oxide Reviewed

    Takaki Onozato, Takayoshi Katase, Akira Yamamoto, Shota Katayama, Koichi Matsushima, Naho Itagaki, Hisao Yoshida, Hiromichi Ohta

    JOURNAL OF PHYSICS-CONDENSED MATTER   28 ( 25 )   25501   2016.6

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    DOI: 10.1088/0953-8984/28/25/255001

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  • Electrolysis-induced protonation of VO2 thin film transistor for the metal-insulator phase modulation Reviewed

    Takayoshi Katase, Kenji Endo, Hiromichi Ohta

    OXIDE-BASED MATERIALS AND DEVICES VII   9749   974916   2016

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    DOI: 10.1117/12.2222255

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  • Solid-Phase Epitaxial Growth of A-Site-Ordered Perovskite Sr4-xErxCo4O12-delta: A Room Temperature Ferrimagnetic p-Type Semiconductor Reviewed

    Takayoshi Katase, Hidefumi Takahashi, Tetsuya Tohei, Yuki Suzuki, Michihiko Yamanouchi, Yuichi Ikuhara, Ichiro Terasaki, Hiromichi Ohta

    ADVANCED ELECTRONIC MATERIALS   1 ( 12 )   1500199   2015.12

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    DOI: 10.1002/aelm.201500199

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  • Room-Temperature-Protonation-Driven On-Demand Metal-Insulator Conversion of a Transition Metal Oxide Reviewed

    Takayoshi Katase, Kenji Endo, Tetsuya Tohei, Yuichi Ikuhara, Hiromichi Ohta

    ADVANCED ELECTRONIC MATERIALS   1 ( 7 )   1500063   2015.7

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    DOI: 10.1002/aelm.201500063

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  • Thermopower analysis of metal-insulator transition temperature modulations in vanadium dioxide thin films with lattice distortion Reviewed

    Takayoshi Katase, Kenji Endo, Hiromichi Ohta

    PHYSICAL REVIEW B   92 ( 3 )   035302   2015.7

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    DOI: 10.1103/PhysRevB.92.035302

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  • Characterization of electronic structure around metal-insulator transition in V1-x WxO2 thin films by thermopower measurement Reviewed

    Takayoshi Katase, Kenji Endo, Hiromichi Ohta

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   123 ( 1437 )   307 - 311   2015.5

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    DOI: 10.2109/jcersj2.123.307

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  • Thermopower analysis of the electronic structure around the metal-insulator transition in V1-xWxO2 Reviewed

    Takayoshi Katase, Kenji Endo, Hiromichi Ohta

    PHYSICAL REVIEW B   90 ( 16 )   1 - 5   2014.10

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    DOI: 10.1103/PhysRevB.90.161105

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  • Critical factor for epitaxial growth of cobalt-doped BaFe2As2 films by pulsed laser deposition Reviewed

    Hidenori Hiramatsu, Hikaru Sato, Takayoshi Katase, Toshio Kamiya, Hideo Hosono

    APPLIED PHYSICS LETTERS   104 ( 17 )   72602   2014.4

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    DOI: 10.1063/1.4874609

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  • Unusual pressure effects on the superconductivity of indirectly electron-doped (Ba1-xLax)Fe2As2 epitaxial films Reviewed

    Takayoshi Katase, Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

    Physical Review B - Condensed Matter and Materials Physics   88 ( 14 )   503   2013.10

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    DOI: 10.1103/PhysRevB.88.140503

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  • Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films Reviewed

    Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

    NEW JOURNAL OF PHYSICS   15   073019   2013.7

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    DOI: 10.1088/1367-2630/15/7/073019

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  • Ultralow-dissipative conductivity by dirac fermions in BaFe 2As2 Reviewed

    Yoshinori Imai, Fuyuki Nabeshima, Daisuke Nakamura, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Atsutaka Maeda

    Journal of the Physical Society of Japan   82 ( 4 )   043709   2013.4

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    DOI: 10.7566/JPSJ.82.043709

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  • Anomalous scaling behavior in a mixed-state Hall effect of a cobalt-doped BaFe2As2 epitaxial film with a high critical current density over 1 MA/cm(2) Reviewed

    Hikaru Sato, Takayoshi Katase, Won Nam Kang, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

    PHYSICAL REVIEW B   87 ( 6 )   064504   2013.2

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    DOI: 10.1103/PhysRevB.87.064504

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  • Superconducting properties and phase diagram of indirectly electron-doped (Sr1?xLax)Fe2As2 epitaxial films grown by pulsed laser deposition Reviewed

    Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Hideo Hosono

    IEEE Transactions on Applied Superconductivity   23 ( 3 )   7300405   2013

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    DOI: 10.1109/TASC.2012.2234935

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  • Competition and cooperation of pinning by extrinsic point-like defects and intrinsic strong columnar defects in BaFe2As2 thin films Reviewed

    B. Maiorov, T. Katase, I. O. Usov, M. Weigand, L. Civale, H. Hiramatsu, H. Hosono

    PHYSICAL REVIEW B   86 ( 9 )   094513   2012.9

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    DOI: 10.1103/PhysRevB.86.094513

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  • Thin film growth by pulsed laser deposition and properties of 122-type iron-based superconductor AE(Fe1-xCox)(2)As-2 (AE = alkaline earth) Reviewed

    Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

    SUPERCONDUCTOR SCIENCE & TECHNOLOGY   25 ( 8 )   084015   2012.8

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    DOI: 10.1088/0953-2048/25/8/084015

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  • Microstructure and transport properties of [001]-tilt bicrystal grain boundaries in iron pnictide superconductor, cobalt-doped BaFe2As2 Reviewed

    Hidenori Hiramatsu, Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Toshio Karniya, Keiichi Tanabe, Hideo Hosono

    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS   177 ( 7 )   515 - 519   2012.4

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    DOI: 10.1016/j.mseb.2011.12.009

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  • Identical effects of indirect and direct electron doping of superconducting BaFe2As2 thin films Reviewed

    Takayoshi Katase, Soshi Iimura, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

    PHYSICAL REVIEW B   85 ( 14 )   140516   2012.4

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    DOI: 10.1103/PhysRevB.85.140516

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  • Thin Film Growth and Device Fabrication of Iron-Based Superconductors Reviewed

    Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Hideo Hosono

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   81 ( 1 )   2012.1

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    DOI: 10.1143/JPSJ.81.011011

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  • H. Hiramatsu, T. Katase, T. Kamiya, and H. Hosono Reviewed

    Thin film growth, device fabrication of iron-based superconductors

    J. Phys. Soc. Jpn.   81   011011   2012

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  • Terahertz conductivity measurement of FeSe0.5Te0.5 and Co-doped BaFe2As2 thin films Reviewed

    D. Nakamura, T. Akiike, H. Takahashi, F. Nabeshima, Y. Imai, A. Maeda, T. Katase, H. Hiramatsu, H. Hosono, S. Komiya, I. Tsukada

    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   471 ( 21-22 )   634 - 638   2011.11

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    DOI: 10.1016/j.physc.2011.05.014

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  • Characterization of epitaxial Co-doped BaFe2As2 thin films Reviewed

    S. Mohan, T. Taen, H. Yagyuda, Y. Nakajima, T. Tamegai, T. Katase, H. Hiramatsu, H. Hosono

    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   471 ( 21-22 )   1181 - 1184   2011.11

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    DOI: 10.1016/j.physc.2011.05.153

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  • Liquid vortex phase and strong c-axis pinning in low anisotropy BaCoxFe2-xAs2 pnictide films Reviewed

    B. Maiorov, T. Katase, S. A. Baily, H. Hiramatsu, T. G. Holesinger, H. Hosono, L. Civale

    SUPERCONDUCTOR SCIENCE & TECHNOLOGY   24 ( 5 )   055007   2011.5

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    DOI: 10.1088/0953-2048/24/5/055007

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  • Impurities in FeAs-based superconductor, SrFe2As2, studied by first-principles calculations Reviewed

    Toshio Kamiya, Hidenori Hiramatsu, Takayoshi Katase, Masahiro Hirano, Hideo Hosono

    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS   173 ( 1-3 )   244 - 247   2010.10

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    DOI: 10.1016/j.mseb.2010.01.051

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  • Transport and magnetic properties of Co-doped BaFe2As2 epitaxial thin films grown on MgO substrate Reviewed

    Shyam Mohan, Toshihiro Taen, Hidenori Yagyuda, Yasuyuki Nakajima, Tsuyoshi Tamegai, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono

    SUPERCONDUCTOR SCIENCE & TECHNOLOGY   23 ( 10 )   105016   2010.10

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    DOI: 10.1088/0953-2048/23/10/105016

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  • DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2 epitaxial films Reviewed

    Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Hidenori Hiramatsu, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono

    SUPERCONDUCTOR SCIENCE & TECHNOLOGY   23 ( 8 )   082001   2010.8

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    DOI: 10.1088/0953-2048/23/8/082001

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  • High critical current density 4 MA/cm2 in Co-doped BaFe 2As2 epitaxial films grown on (La,Sr)(Al,Ta)O3 substrates without buffer layers Reviewed

    Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

    Applied Physics Express   3 ( 6 )   063101   2010.6

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    DOI: 10.1143/APEX.3.063101

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  • Josephson junction in cobalt-doped BaFe2As2 epitaxial thin films on (La,Sr)(Al,Ta)O-3 bicrystal substrates Reviewed

    Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Hidenori Hiramatsu, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono

    APPLIED PHYSICS LETTERS   96 ( 14 )   142507   2010.4

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    DOI: 10.1063/1.3371814

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  • Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer Reviewed

    Tomomasa Shinozaki, Kenji Nomura, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    THIN SOLID FILMS   518 ( 11 )   2996 - 2999   2010.3

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    DOI: 10.1016/j.tsf.2009.10.131

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  • Fabrication of Atomically Flat ScAlMgO4 Epitaxial Buffer Layer and Low-Temperature Growth of High-Mobility ZnO Films Reviewed

    Takayoshi Katase, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    CRYSTAL GROWTH & DESIGN   10 ( 3 )   1084 - 1089   2010.3

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    DOI: 10.1021/cg900616c

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  • Atomically-flat, chemically-stable, superconducting epitaxial thin film of iron-based superconductor, cobalt-doped BaFe2As2 Reviewed

    Takayoshi Katase, Hidenori Hiramatsu, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    SOLID STATE COMMUNICATIONS   149 ( 47-48 )   2121 - 2124   2009.12

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    DOI: 10.1016/j.ssc.2009.10.001

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  • Fabrication of Flat MgO(111) Films on Al2O3(0001) Substrates by Pulsed Laser Deposition Reviewed

    Tomofumi Susaki, Sho Kumada, Takayoshi Katase, Kosuke Matsuzaki, Masashi Miyakawa, Hideo Hosono

    APPLIED PHYSICS EXPRESS   2 ( 9 )   091403   2009.9

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    DOI: 10.1143/APEX.2.091403

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  • Water-induced superconductivity in SrFe2As2 Reviewed

    Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    PHYSICAL REVIEW B   80 ( 5 )   052501   2009.8

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    DOI: 10.1103/PhysRevB.80.052501

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  • Large domain growth of GaN epitaxial films on lattice-matched buffer layer ScAlMgO4 Reviewed

    Takayoshi Katase, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS   161 ( 1-3 )   66 - 70   2009.4

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    DOI: 10.1016/j.mseb.2009.02.003

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  • Superconductivity in Epitaxial Thin Films of Co-Doped SrFe2As2 with Bilayered FeAs Structures and their Magnetic Anisotropy Reviewed

    Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    APPLIED PHYSICS EXPRESS   1 ( 10 )   101702   2008.10

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    DOI: 10.1143/APEX.1.101702

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  • Heteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO Reviewed

    Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    APPLIED PHYSICS LETTERS   93 ( 16 )   162504   2008.10

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    DOI: 10.1063/1.2996591

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  • Fabrication of ScAlMgO4 epitaxial thin films using ScGaO3(ZnO)(m) buffer layers and its application to lattice-matched buffer layer for ZnO epitaxial growth Reviewed

    Takayoshi Katase, Kenji Noinura, Hirornichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    THIN SOLID FILMS   516 ( 17 )   5842 - 5846   2008.7

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    DOI: 10.1016/j.tsf.2007.10.049

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Books

  • 熱制御に向けた相変化材料PCMの開発と応用

    片瀬貴義, 神谷利夫( Role: Joint author第II編、第8章 熱伝導制御材料)

    シーエムシー出版  2024.4 

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  • フォノンドラッグ効果-熱電性能向上への新アプローチ-

    松浦弘泰, 高橋英史, 片瀬貴義( Role: Joint author固体物理 59(2) 31-40)

    2024.1 

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  • 非平衡(Pb,Sn)Se半導体における2D-3D構造転移の人工的誘起と巨大電気特性変調

    片瀬貴義, 神谷利夫(応用物理 91(11) 683-687)

    2023.10 

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  • 電気伝導度と熱起電力のトレードオフ解消による酸化物熱電変換材料の高性能化

    片瀬貴義, 神谷利夫(機能材料 43(4) 17-24)

    シーエムシー出版  2023.4 

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  • アモルファス酸化物半導体:In-Ga-Zn-O

    井手啓介, 片瀬貴義, 野村研二, 雲見日出也, 細野秀雄, 神谷利夫(2020版 薄膜作製応用ハンドブック 4編 2章 光部品 7節 透明導電膜)

    2020.2 

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  • Exotic Crystal Structures and Electronic Structures in Novel Structured Inorganic Materials

    T. Kamiya, H. Hiramatsu, K. Ide, T. Katase, H. Hosono(Chapter 6, Novel Structured Metallic and Inorganic Materials)

    Springer Nature Singapore Pte Ltd.  2019.7 

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MISC

  • 高い変換効率を有する環境調和型熱電材料の設計と開発 Invited

    片瀬貴義, 神谷利夫

    特集号:エネルギーと無機マテリアル、無機マテリアル学会誌11月号   31 ( 433 )   310 - 316   2024.11

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  • 環境に優しい熱電材料を目指して―水素を用いた酸化物の熱電変換効率改善 Invited Reviewed

    片瀬貴義, 神谷利夫

    セラミックス特集「熱エネルギー利用に向けた熱電変換材料・デバイス革新」   59 ( 6 )   382 - 385   2024.6

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  • 毒性元素を含まない熱電変換材料の高性能化-新アプローチによる挑戦- Invited

    片瀬貴義, 神谷利夫

    クリーンエネルギー   33 ( 5 )   34 - 40   2024.5

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  • ハイエントロピー型熱電材料AgBiSe2−2xSxTexの熱電特性

    瀨下亜里, 山下愛智, 藤田武志, 三浦 章, 片瀬貴義, 森吉千佳子, 黒岩芳弘, 中平夕貴, 水口佳一

    61 ( 3 )   2024.3

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  • 毒性元素を含まない熱電材料で過去最高の変換効率-逆ペロブスカイト酸化物で実現- Invited

    片瀬貴義, ホシンイ, 神谷利夫

    セラミックス   59 ( 3 )   220   2024.2

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  • 熱電変換効率改善の新アプローチ : H-置換により低い格子熱伝導率と高い電気伝導度を同時に実現

    片瀬貴義, 神谷利夫

    セラミックス   58 ( 7 )   498   2023.6

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  • 酸化物に圧力を加えて, 電気伝導度と熱起電力を同時に向上させる熱電材料を開発 Invited

    片瀬貴義

    日本熱電学会誌   18 ( 3 )   148   2022.5

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  • 強電子相関酸化物ヘテロ構造に発現する巨大フォノンドラッグ熱電能 Invited

    片瀬貴義

    日本熱電学会誌   18 ( 3 )   147   2022.5

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  • 電気伝導率と熱起電力を同時に向上できる酸化物熱電材料を開発 Invited

    片瀬貴義, 神谷利夫

    セラミックス   57 ( 2 )   114   2022.4

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  • 温度差で発電する酸化物熱電材料 人工構造を利用した、熱電変換特性を高める新たなアプローチ Invited

    片瀬貴義, 神谷利夫

    クリーンエネルギー   31 ( 3 )   2021.10

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  • 結晶構造の次元性を人為的に制御し,巨大な電気抵抗スイッチを実現 Invited

    片瀬貴義, 神谷利夫

    自動車技術「超の世界」   75 ( 12 )   118 - 119   2021.5

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  • セレン化スズ半導体の極性を多段階制御 排熱を電気に変える高性能熱電素子実現へ Invited

    片瀬貴義, 神谷利夫

    クリーンエネルギー   30 ( 4 )   19 - 21   2021.4

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  • 遷移金属元素を発光中心としたアモルファス酸化物半導体蛍光体薄膜の探索

    二角勇毅, 渡邉脩人, 井手啓介, KIM J., 片瀬貴義, 平松秀典, 平松秀典, 細野秀雄, 細野秀雄, 神谷利夫, 神谷利夫

    セラミックス基礎科学討論会講演要旨集   56th   2018

  • Ba1-xLaxFe2As2薄膜の結晶構造

    小林賢介, 中尾朗子, 真木祥千子, 山浦淳一, 片瀬貴義, 佐藤光, 佐賀山基, 熊井玲児, 村上洋一, 平松秀典, 平松秀典, 細野秀雄, 細野秀雄

    日本物理学会講演概要集(CD-ROM)   72 ( 1 )   2017

  • 薄膜プラズモン太陽電池の高性能化に向けた酸化チタンの電気特性の評価

    中村圭佑, 片瀬貴義, 押切友也, 上野貢生, 太田裕道, 三澤弘明

    日本化学会春季年会講演予稿集(CD-ROM)   96th   2016

  • パルスレーザー堆積法による薄膜プラズモン太陽電池の光電変換特性

    中村圭佑, 片瀬貴義, 押切友也, 上野貢生, 太田裕道, 三澤弘明

    日本化学会講演予稿集   95th ( 2 )   2015

  • 24aGL-12 Quasiparticle dynamics of Ba(Fe_<1-x>Co_x)_2As_2 in THz regions

    Imai Y, Nabeshima F, Nakamura D, Katase T, Hiramatsu H, Hosono H, Maeda A

    Meeting Abstracts of the Physical Society of Japan   66 ( 0 )   2011

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  • 26aEE-10 THz conductivity measurement of underdoped Ba(Fe_<1-x>Co_x)_2As_2 thin film

    Nakamura D, Nabeshima F, Imai Y, Maeda A, Katase T, Hiramatsu H, Hosono H

    Meeting Abstracts of the Physical Society of Japan   66 ( 0 )   589 - 589   2011

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  • 不足ドープBa(Fe1-xCox)2As2薄膜のテラヘルツ伝導度測定

    中村大輔, 鍋島冬樹, 今井良宗, 前田京剛, 片瀬貴義, 平松秀典, 細野秀雄, 細野秀雄

    日本物理学会講演概要集   66 ( 1 )   2011

  • テラヘルツ伝導度からみたBa(Fe1-xCox)2As2の準粒子ダイナミクス

    今井良宗, 今井良宗, 鍋島冬樹, 鍋島冬樹, 中村大輔, 片瀬貴義, 平松秀典, 細野秀雄, 細野秀雄, 前田京剛, 前田京剛

    日本物理学会講演概要集   66 ( 2 )   2011

  • 23pWH-15 Characterization of Ba(Fe_<1-x>Co_x)_2As_2 thin films by magnetization, transport and Hall measurements

    Mohan Shyam, Taen Toshihiro, Yagyuda Hidenori, Nakajima Yasuyuki, Tamegai Tsuyoshi, Katase Takayoshi, Hiramatsu Hidenori, Hosono Hideo

    Meeting abstracts of the Physical Society of Japan   65 ( 2 )   504 - 504   2010.8

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  • BaFe1.8Co0.2As2及びFe(Se,Te)超伝導体におけるTHz電気伝導度

    前田京剛, 前田京剛, 中村大輔, 中村大輔, 鍋島冬樹, 鍋島冬樹, 片瀬貴義, 平松秀典, 細野秀雄, 細野秀雄, 細野秀雄, 今井良宗, 今井良宗, 秋池孝則, 秋池孝則, 田中遼, 田中遼, 塚田一郎, 塚田一郎

    日本物理学会講演概要集   65 ( 1 )   2010

  • 20aGH-6 THz electrical conductivity of BaFe_<1.8>Co_<0.2>As_2 and Fe(Se,Te) superconductors

    Maeda A, Nakamura D, Nabeshima F, Katase T, Hiramatsu H, Hosono H, Imai Y, Akiike T, Tanaka R, Tsukada I

    Meeting Abstracts of the Physical Society of Japan   65 ( 0 )   535 - 535   2010

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Presentations

  • Beyond Conventional Doping: Polarity Switching and Carrier Control in Sn-Based Chalcogenides Invited

    Takayoshi Katase

    Materials Science & Technology Technical Meeting and Exbibition (MS&T25), American Ceramic Society  2025.9 

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  • Unconventional Doping Mechanisms in Layered Sn-based Chalcogenide Thermoelectrics Invited

    Takayoshi Katase

    6th Annual Meeting of the Taiwan Thermoelectric Society  2025.8 

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    Event date: 2025.8

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  • 非平衡相境界を利用した新機能開拓 Invited

    片瀬貴義

    金研研究会「強相関物質における創発物性研究の現状と将来展望2025」  2025.6 

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    Event date: 2025.5 - 2025.6

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  • 赤外線透過率-導電率同時切替デバイスの開発~多機能型スマートウィンドウに向けて~ Invited

    片瀬貴義, 遠藤賢司, 太田裕道

    第22回 クロモジェニック研究会  2016.11 

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  • 光・電気・磁気特性を切替え可能な薄膜機能デバイスの開発 Invited

    片瀬貴義, 太田裕道

    第12回フロンティア材料研究所講演会、2016年度フロンティア材料研究所学術賞 受賞記念講演会  2016.9 

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  • 絶縁体から導電性磁石への可逆切替デバイス-高密度情報記憶素子に向けて- Invited

    片瀬貴義, 鈴木雄喜, 太田裕道

    日本セラミックス協会第29回秋季シンポジウム  2016.9 

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  • Electrochemical modulation of insulator to conducting magnet; a new route for high-capacity information storage device Invited International conference

    Takayoshi Katase, Yuki Suzuki, Hiromichi Ohta

    International Research School: Electronic States and Phases Induced by Electric or Optical Impacts (IMPACT) 2016  2016.8 

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  • Electrochemically switchable electromagnetic device with water electrolysis Invited International conference

    Takayoshi Katase, Hiromichi Ohta

    Mini-workshop on oxides and related materials  2016.2 

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  • Reversible switching of optoelectric and electro-magnetic properties of functional oxides using water-infiltrated glass Invited International conference

    Takayoshi Katase, Hiromichi Ohta

    SPIE Photonics West 2016  2016.2 

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  • 水の電気分解を利用した機能性酸化物の電気・磁 気・光物性変調デバイス Invited

    片瀬貴義, 太田裕道

    第311回 応用セラミックス研究所学術講演会 [第7回 材料構造講演会]  2016.2 

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  • 遷移金属酸化物薄膜歪界面のフォノンドラッグ熱電能 Invited

    片瀬 貴義

    奈良先端科学技術大学院大学 異分野融合ワークショップ 電子格子相互作用:基礎物理からデバイス応用まで  2017.7 

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  • 遷移金属酸化物の電気化学反応を利用した機能変調デバイス Invited

    片瀬貴義, 太田裕道

    6大学連携プロジェクト公開討論会  2017.3 

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  • (平成28年度進歩賞受賞講演)遷移金属酸化物の酸化・還元を利用した薄膜機能デバイスの開発 Invited

    片瀬貴義, 太田裕道

    日本セラミックス協会2017年 年会  2017.3 

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  • 無機機能性材料の薄膜成長とデバイス化 Invited

    片瀬 貴義

    第17回フロンティア材料研究所講演会(第10回材料構造講演会)「構造と新規物質・新機能」  2016.12 

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  • Metal-insulator transition and thermopower modulation of VO2 thin film by electric-field induced hydrogenation Invited International conference

    Takayoshi Katase, Hiromichi Ohta

    Oxide Thin Films for Advanced Energy and Information Applications; Materials Chemistry of Thin Film Oxides  2014.7 

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  • Bicrystal grain boundary junction of Fe-based superconductor Co-doped BaFe2As2 Invited International conference

    T. Katase, H. Hiramatsu, Y. Ishimaru, A. Tsukamoto, C. Sheehan, V. Matias, T. Kamiya, K. Tanabe, H. Hosono

    The 15th Japan-US Workshop on Advanced Superconductors  2011.10 

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  • High critical current density 4MA/cm2 in Co-doped BaFe2As2 epitaxial films grown on (La,Sr)(Al,Ta)O3 substrates without buffer layers Invited

    片瀬貴義, 平松秀典, 神谷利夫, 細野秀雄

    2011年秋季第72回応用物理学会学術講演会  2011.8 

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  • Thin film growth and device fabrication of iron pnictide superconductors Invited International conference

    T. Katase, H. Hiramatsu, Y. Ishimaru, A. Tsukamoto, C. Sheehan, V. Matias, T. Kamiya, K. Tanabe, H. Hosono

    Seminar at Los Alamos National Laboratory  2011.5 

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  • Robust grain boundary nature in iron pnictide Superconductors Invited International conference

    T. Katase, Y. Ishimaru, A. Tsukamoto, H. Hiramatsu, T. Kamiya, K. Tanabe, H. Hosono

    2011 MRS Spring Meeting  2011.4 

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  • Grain boundary properties of iron-pnictide superconductor, cobalt-doped BaFe2As2 Invited International conference

    T. Katase, Y. Ishimaru, A. Tsukamoto, H. Hiramatsu, T. Kamiya, K. Tanabe, H. Hosono

    The 23rd International Symposium on Superconductivity 2010  2010.11 

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  • 鉄系超伝導体Co添加BaFe2As2エピタキシャル薄膜によるジョセフソン接合 Invited

    片瀬貴義, 石丸喜康, 塚本晃, 平松秀典, 神谷利夫, 田辺圭一, 細野秀雄

    2010年春季第57回応用物理学会関係連合講演会  2010.3 

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  • Reversible modulation of opto-electric and electro-magnetic properties of transition metal oxides using water-infiltrated glass Invited International conference

    Takayoshi Katase, Hiromichi Ohta

    EMN Meeting on Ceramics  2016.1 

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  • 水電気分解を利用した機能性酸化物の光・ 電子・磁気物性可逆変調 Invited

    片瀬貴義, 太田裕道

    附置研究所間アライアンス 第三回若手研究交流会  2015.11 

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  • Electro-magnetic properties control of functional oxides by pseudo solid-state electrochemistry Invited International conference

    Takayoshi Katase, Hiromichi Ohta

    2015 EMN Qingdao Meeting  2015.6 

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  • Thermal conductivity modulation via crystal structure dimensionality switching of chalcogenide semiconductors Invited

    Takayoshi Katase

    International Workshop “Thermal Conductivity of solid states at low temperatures”  2023.10 

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  • 新材料で切り拓くカーボンニュートラル社会への挑戦 Invited

    片瀬貴義

    自然科学研究機構 核融合科学研究所 セミナー  2023.7 

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  • Novel Material Development toward High-efficiency Energy Devices Invited

    Takayoshi Katase

    Advanced Performance Metals Workshop  2023.7 

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  • エネルギーデバイスに革新を起こす新材料開発 Invited

    片瀬貴義

    特別講義、大阪大学豊中キャンパス  2023.2 

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  • 超高効率エネルギー利用を可能にする新材料・デバイス開発 Invited

    片瀬貴義

    科学工学技術委員会講演会  2022.12 

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  • Electronic property modulation of transition metal oxides by electrochemical and strain engineering Invited

    Takayoshi Katase

    2020 International Conference on Solid State Devices and Materials (SSDM)  2020.9 

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  • Unusually large power-factor enhancement by breaking thermoelectric trade-off relation in transition metal oxide Invited

    Takayoshi Katase

    Materials Research Meeting 2019  2019.12 

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  • トレードオフの相関を超えた巨大熱電変換性能 Invited

    片瀬貴義

    令和元年度第2回プロセス研究会  2019.12 

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  • 遷移金属酸化物歪界面で発現する特異な熱電能 Invited

    片瀬 貴義

    公益社団法人日本磁気学会 第217回研究会「シン・熱電変換材料」  2018.3 

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  • Room-temperature-protonation-driven optoelectronic device with water-gated thin-film-transistor structure Invited International conference

    Takayoshi Katase, Hiromichi Ohta

    the 8th International Conference and Exhibition on Lasers, Optics & Photonics  2017.11 

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  • 含水多孔質ガラスを用いたオンデマンド赤外線透過率-導電率制御デバイス Invited

    片瀬貴義, 太田裕道

    日本真空学会 スパッタリングおよびプラズマプロセス技術部会  2017.10 

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  • 新材料開発によるエネルギーデバイスの革新 Invited

    片瀬貴義

    東海 NFRW・東海地区若手チャプタージョイントワークショップ、応用物理学会東海支部  2022.11 

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  • SnSe系非平衡固溶体:熱電変換特性向上および熱伝導制御の新たなアプローチ Invited

    片瀬貴義

    日立金属株式会社 グローバル技術革新センター セミナー  2022.9 

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  • カルコゲナイド固溶系半導体の2次元―3次元構造転移と熱伝導率変調 Invited

    片瀬貴義

    応用物理学会 第6回フォノンエンジニアリング研究会  2022.7 

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  • 非平衡カルコゲナイド固溶系半導体の2次元―3次元構造転移と巨大電子物性変調 Invited

    片瀬貴義

    日本セラミックス協会 第34回秋季シンポジウム  2021.9 

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  • 不活性電子対制御によるカルコゲナイド半導体の巨大電子物性変調 Invited

    片瀬貴義

    日本磁気学会 第68回化合物新磁性材料専門研究会  2021.3 

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  • Material design of thermoelectric oxides with low thermal conductivity Invited

    Takayoshi Katase

    Materials Science & Technology Technical Meeting and Exbibition (MS&T24)  2024.10 

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  • 電子と原子を巧みに操り、次世代熱エネルギー材料を創る Invited

    片瀬貴義

    サイテックサロン, サイエンステクノフロンティアフォーラム  2024.9 

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  • Material design for thermal conductivity modulation using nonequilibrium phase boundary Invited

    片瀬貴義

    2024年 応用物理学会 秋季学術講演会  2024.9 

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  • Mixed-anion oxides for eco-friendly high-performance thermoelectric materials Invited

    Takayoshi Katase

    14th CMCEE  2024.8 

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  • Design of low thermal conductivity and thermal switching materials Invited

    Takayoshi Katase

    MRM2023/IUMRS-ICA2023  2023.12 

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  • New strategies of phonon engineering for high performance thermoelectric materials Invited

    Takayoshi Katase

    Workshop on materials science  2023.12 

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  • Design of 2D-3D structural switching material for giant physical property modulation” Invited

    Takayoshi Katase

    The 35th Symposium on Phase Change Oriented Science  2023.11 

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  • 相転移材料を用いた熱・電気輸送の制御 Invited

    片瀬貴義

    フォノンエンジニアリングの基本的な考え方,熱伝導率の制御や測定,その応用、技術情報協会セミナー  2024.7 

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  • 酸化物ヘテロ界面制御によるフォノンドラッグ熱電能の増強 Invited

    片瀬貴義

    第5回新奇二次元デバイス・物質科学ワークショップ  2024.6 

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  • 高効率熱電変換と熱制御に向けた新材料開発 Invited

    片瀬貴義

    第57回エネルギーハーべスティングコンソーシアム総会  2024.6 

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  • 環境に優しい新熱電材料:複合アニオン酸化物 Invited

    片瀬貴義

    熱電材料研究の最前線と新展開  2024.4 

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  • Material design for thermal conductivity reduction and modulation Invited

    Takayoshi Katase

    TMS 2024, the 153rd Annual Meeting & Exhibition  2024.3 

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  • Novel ion substitution approach for high performance thermoelectric materials Invited

    Takayoshi Katase

    48th International Conference and Exposition on Advanced Ceramics and Composites (ICACC2024)  2024.2 

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  • 次世代エネルギーデバイスに向けた新材料開発 Invited

    片瀬貴義

    分子研物質分子科学研究領域研究会「物質分子科学研究展望」  2024.1 

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  • Phonon-drag-driven thermopower enhancement in oxide thin-film heterostructure Invited

    Takayoshi Katase

    TMS 2025, the 153th Annual Meeting & Exhibition  2025.3 

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  • Design of eco-friendly and high-efficiency thermo-photoelectric conversion materials Invited

    Takayoshi Katase

    TMS 2025, the 153rd Annual Meeting & Exhibition  2025.3 

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  • New strategy of phonon engineering for high performance thermoelectric oxides Invited

    Takayoshi Katase

    New Zealand – Japan workshop on emerging solid-state technology for low-enthalpy energy harvesting  2024.11 

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Industrial property rights

  • SEMICONDUCTOR DEVICE

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    Application no:特願2015-002769  Date applied:2016

    Patent/Registration no:特許第6629241号  Date registered:2019 

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Awards

  • 優秀オープンイノベータ功労賞

    2025.3   東京科学大学  

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  • Science Tokyoの星

    2025.3   東京科学大学  

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  • 本多記念研究奨励賞

    2025.2  

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  • オープンイノベータ功労賞

    2024.3   東京工業大学  

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  • The Young Scientists’ Prize, The Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology

    2021.4  

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  • 第17回日本熱電学会学術講演会 優秀講演賞

    2020.9  

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  • Institute of Physics, Outstanding Reviewer Awards 2019

    2020.3  

    Takayoshi Katase

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  • 58th Symposium of Basic Science of Ceramics, World Young Fellow Meeting 2020, Presentation Award

    2020.2   The Ceramics Society of Japan  

    Takayoshi Katase

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  • 2019 Tokyo Tech Challenging Research Award, Suematsu Challenging Research Award

    2019.9  

    Takayoshi Katase

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  • 第31回 安藤博記念学術奨励賞

    2018.6   一般財団法人 安藤研究所  

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  • 平成30年度花王科学奨励賞 化学・物理学部門

    2018.6   公益財団法人花王芸術・科学財団  

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  • 日本セラミックス協会賞 進歩賞

    2017.6  

    片瀬 貴義

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  • Best Poster Award

    2016.10   The 23rd International Workshop on Oxide Electronics (WOE 23)  

    Takayoshi Katase

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  • フロンティア材料研究所学術賞(研究奨励部門)

    2016.9  

    片瀬 貴義

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  • 第44回電子科学研究所松本・羽鳥奨学賞

    2015.2  

    片瀬 貴義

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  • 第11回薄膜材料デバイス研究会 ベストペーパーアワード

    2014.11  

    片瀬 貴義

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  • 第34回エレクトロセラミックス研究討論会 優秀賞

    2014.10  

    片瀬 貴義

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  • 第29回井上研究奨励賞

    2013.2  

    片瀬 貴義

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  • 平成24年手島精一記念研究賞(博士論文賞)

    2013.2  

    片瀬 貴義

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  • 第26回独創性を拓く先端技術大賞 フジテレビジョン賞

    2012.7  

    片瀬 貴義

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  • 第16回超伝導科学技術賞

    2012.4  

    片瀬 貴義

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  • 第33回応用物理学会論文奨励賞

    2011.8  

    片瀬 貴義

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  • Materials Research Society Symposium Award (2nd Place Oral Presentation)

    2010.5  

    片瀬 貴義

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  • 第27回応用物理学会講演奨励賞

    2010.3  

    片瀬 貴義

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  • 第31回応用物理学会優秀論文賞

    2009.9  

    片瀬 貴義

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Research Projects

  • Development and device demonstration of new ultra-widegap oxide semiconductors beyond the conventional design roule

    Grant number:24K21671  2024.6 - 2026.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Challenging Research (Exploratory)

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    Grant amount:\6500000 ( Direct Cost: \5000000 、 Indirect Cost:\1500000 )

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  • 14族混晶半導体におけるフォノンドラッグエンジニアリング

    Grant number:24H00314  2024.4 - 2029.3

    日本学術振興会  科学研究費助成事業  基盤研究(A)

    黒澤 昌志, 片瀬 貴義

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    Grant amount:\48230000 ( Direct Cost: \37100000 、 Indirect Cost:\11130000 )

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  • Thermal conductivity switching by electric-field induced 2D-3D structural phase transition

    Grant number:22K18881  2022.6 - 2024.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Challenging Research (Exploratory)

    Katase Takayoshi

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    Grant amount:\6500000 ( Direct Cost: \5000000 、 Indirect Cost:\1500000 )

    Electric-field induced transition between two-dimensional (2D) and three-dimensional (3D) structures was demonstrated in epitaxial thin films of nonequilibrium (Pb1-xSnx)Se solid solution to develop thermal conductivity switching devices with giant electrical conductivity and lattice thermal conductivity change. Giant modulation in electronic conductivity at 7 orders of magnitude was demonstrated in (Pb1-xSnx)Se films by reversible 2D-3D structural transition, where the transition temperature was modulated by changing x values. In addition, electric double-layer transistors using (Pb1-xSnx)Se thin films as active layers were fabricated, and the 2D-3D structural transition was controlled by the application of negative gate bias, resulting in a reversible control of the sheet resistance by more than two orders of magnitude.

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  • Exploration of angular momentum current science and its application to spin-orbit electronics

    Grant number:22H04964  2022.4 - 2027.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (S)

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    Grant amount:\197340000 ( Direct Cost: \151800000 、 Indirect Cost:\45540000 )

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  • 複合アニオン酸化物熱電変換材料-熱伝導率低減による性能向上と機構解明-

    Grant number:22H01766  2022.4 - 2025.3

    日本学術振興会  科学研究費助成事業  基盤研究(B)

    片瀬 貴義

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    Grant amount:\18070000 ( Direct Cost: \13900000 、 Indirect Cost:\4170000 )

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  • 複合アニオン酸化物熱電変換材料-熱伝導率低減による性能向上と機構解明-

    Grant number:23K23034  2022.4 - 2025.3

    日本学術振興会  科学研究費助成事業  基盤研究(B)

    片瀬 貴義

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    Grant amount:\18070000 ( Direct Cost: \13900000 、 Indirect Cost:\4170000 )

    水素濃度xを制御したSrTiO3-xHxバルク焼結体の作製と熱電特性評価および熱伝導・キャリア輸送特性の解析を行った。まず、放電プラズマ焼結法(SPS)において、水素が脱離しないように金属箔で密閉する工夫を施すことで、高濃度に水素を含有するSrTiO3-xHx焼結体を作製した。具体的には、粒径300nm以下のSrTiO3粉末とCaH2粉末をグローブボックス内で混合し、430~520度の低温で真空加熱して、水素化したSrTiO3-xHx粉末を作製した。SrTiO3-xHx粉末を10mmφ×1mmtのペレットに成型し、水素を吸蔵しないPtやステンレスの金属箔で密閉した。その後、SPSにより水素が脱離しないようにした密閉環境で1050度で10分間焼結を行うことによって、焼結密度96~99%のSrTiO3-xHx焼結体(x=0.057~0.216)を作製することに成功した。SrTiO3-xHxバルク焼結体の熱伝導率を計測したところ、SrTiO3多結晶体と比べて、僅か2.3%のH-置換(x=0.068)で格子熱伝導率が5.5W/mKまで減少し、更にH-濃度を増やすと3.6W/mK(x=0.216)まで減少させることに成功した。次に、SrTiO3-xHx焼結体の電気特性を調べたところ、従来のSr1-xLaxTiO3焼結体と比べて非常に高い電気伝導度を示すため、高い出力因子を実現できることが分かった。SrTiO3-xHx焼結体では粒界散乱が殆ど寄与しておらず、室温でも単結晶と同等の高い電気伝導度(1740S/cm)を示すことが分かった。その結果、SrTiO3-xHx焼結体の高い出力因子と低い格子熱伝導率の両立によって、Sr1-xLaxTiO3焼結体や単結晶よりも高いZTを実現できることが分かった。

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  • IV族混晶バンドエンジニアリングを基軸とした巨大熱電能の制御とデバイス応用

    Grant number:21H01366  2021.4 - 2024.3

    日本学術振興会  科学研究費助成事業  基盤研究(B)

    黒澤 昌志, 片瀬 貴義

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    Grant amount:\17940000 ( Direct Cost: \13800000 、 Indirect Cost:\4140000 )

    本年度得られた成果を以下の通りまとめる。
    <BR>
    (1)ゲルマニウムスズ薄膜:分子線エピタキシー法によりn型ゲルマニウムスズ薄膜(スズ組成:3%、ドーパント: Sb)を形成した。パワーファクタのキャリア濃度依存性を調査したところ、5E19 cm-3において最大値(~30 μWcm-1K-2@室温)が得られることが分かった。n型のBiTe系薄膜の報告値(25 μWcm-1K-2)に匹敵する値である。低温での物性計測も進め、100 K以下の温度において、拡散理論では説明できない熱起電力の増大が認められた。結果として、パワーファクタは最大で10E3 μWcm-1K-2に到達した。
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    (2)シリコンスズ薄膜:シリコン中のスズ固溶限は0.1%と非常に低く、結晶成長過程でSn析出しやすい系である。リスクヘッジとして2つの結晶成長法(分子線エピタキシー法、スパッタリング法)を試みた。成膜レートの高速化によりSn析出をある程度抑制できることを見出した。特に、格子マッチング系(シリコンゲルマニウムバッファ上のシリコンスズ)においては、Sn析出せずに結晶成長が進行した結果、設計通りのSn導入(10%)を達成した。イオン注入を用いたn型ドーピングも行い、Hall電子濃度を10E18~10E20 cm-3の間で制御することにも成功した。

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  • Exploration of thermal conductivity switching material with periodic nano-structure transition

    Grant number:20K21075  2020.7 - 2022.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Challenging Research (Exploratory)  Grant-in-Aid for Challenging Research (Exploratory)

    Katase Takayoshi

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    Authorship:Principal investigator 

    Grant amount:\6500000 ( Direct Cost: \5000000 、 Indirect Cost:\1500000 )

    Large thermal conductivity (κ) modulation was demonstrated by the reversible 3-dimensional (3D) to 2D crystal structure transition in a nonequilibrium solid solution of (Pb1-xSnx)Se, where Pb2+ stabilizes a 3D cubic structure while Sn2+ does a 2D layered structure. The phase boundary of these phases was induced in (Pb0.5Sn0.5)Se bulk polycrystals by thermally quenching the high-temperature solid solution phase. Through the 3D-2D phase transition, the 1/2.9-times decrease of lattice κ was achieved by strong phonon scattering in the 2D layered structure, and the electronic κ was also decreased by 5 orders of magnitude due to the electronic phase transition from a 3D high conductivity state to a 2D semiconducting state. The total κ modulation ratio = 3.6 was attained at 373 K. The present strategy will lead to a novel concept for designing thermal management materials through crystal-structure dimensionality switch using nonequilibrium phase boundaries.

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  • Creation and comprehensive exploration of high performance thermoelectric semiconductor utilizing natural quantum structure of layered transition metal compound

    Grant number:19H02425  2019.4 - 2022.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)  Grant-in-Aid for Scientific Research (B)

    Katase Takayoshi

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    Authorship:Principal investigator 

    Grant amount:\18330000 ( Direct Cost: \14100000 、 Indirect Cost:\4230000 )

    Design, synthesis, and electronic property characterization of high purity layered transition metal nitride semiconductors, AETMN2 (AE=Ca,Sr,Ba and TM=Ti,Zr,Hf) were performed to search new high performance thermoelectric materials with two dimensional electron gas (2DEG) structure. Density functional theory defect calculations clarified that nitrogen vacancy and oxygen impurity substitution, as shallow donor, are easily formed in SrTiN2, while the defect formation is largely suppressed by Ca substitution at Sr site and Zr,Hf substitution at Ti site. The electronic, optical, and magnetic properties were clarified by using high phase purity (>94 mol%) AETMN2 bulks synthesized by a solid-state reaction between AENH and TMN precursors with NaN3. The easiness of impurity incorporation is designed to produce a more intrinsic semiconductor in wider chemical conditions, opening a way to cultivating novel functional materials that are sensitive to atmospheric impurities and defects.

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  • 遷移金属酸化物歪界面を利用したフォノンドラッグ熱電能の制御

    2016.10 - 2020.3

    科学技術振興機構さきがけ 

    片瀬 貴義

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    Authorship:Principal investigator  Grant type:Competitive

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  • 室温で不揮発動作可能な反強磁性/絶縁体-強磁性/金属スイッチング素子の開発

    2016.4 - 2018.3

    学術研究助成基金助成金 挑戦的萌芽研究 

    片瀬 貴義

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    Authorship:Principal investigator  Grant type:Competitive

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  • 水の電気分解を利用した酸化物 薄膜固体デバイスの電気物性制御

    2015.3 - 2018.3

    科学研究費補助金 若手研究(A) 

    片瀬 貴義

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    Authorship:Principal investigator  Grant type:Competitive

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  • Searching for new materials functions by atomic layer control

    Grant number:25106007  2013.6 - 2018.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

    Ohta Hiromichi, KATASE TAKAYOSHI, YAMANOUCHI MICHIHIKO

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    Grant amount:\121680000 ( Direct Cost: \93600000 、 Indirect Cost:\28080000 )

    In this study, we fabricated “Nano-layers”, which are thin films controlled in the thickness at the atomic level. We searched for new materials functions, and worked on the development of Nanostructure information by providing the nano-layers to other groups. The major results are listed below. [1] We successfully enhanced the thermoelectric power factor of oxide-based superlattices double compared with the bulk. [2] We clarified the origin of carrier mobility suppression of a transparent oxide semiconductor and successfully realized high carrier mobility. [3] We found that two-dimensional electron gas in semiconductor shows high thermoelectric power factor. [4] We realized thin-film devices, which can switch their optical transmission, electrical resistivity, and magnetic properties simultaneously. [5] We realized iron-based superconducting films on the metallic tapes, which showed high critical current density suitable as practical applications.

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  • Electric field accumulation and giant thermopower modulation of one dimensional electron gas in oxide semiconductors

    Grant number:25246023  2013.4 - 2017.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

    Ohta Hiromichi, KATASE TAKAYOSHI

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    Grant amount:\47450000 ( Direct Cost: \36500000 、 Indirect Cost:\10950000 )

    In this study, I targeted electric field accumulation and observation of giant thermopower of one dimensional electron gas (1DEG) by AFM lithography technique utilizing an electrochemical redox reaction between H+/OH- ions in the nanoporous glass and oxide semiconductors. Although I succeeded AFM lithography of SrTiO3-1DEG since the resultant shape suggested 1DEG formation, the thermopower could not be measured due to the low stability of the resultant 1DEG. Therefore, I searched more appropriate materials, which show stable redox reaction. As a result, I observed several stable reversible redox reactions such as insulating VO2 - metal HxVO2, insulating SrCoO2.5 - metal SrCoO3, and insulating WO3 - metal HWO3 by using H+/OH- ions in the nanoporous glass. These results appeared on Journal papers, newspapers, and TV. Unfortunately 1DEG has not been realized in this study duration, I think that 1DEG can be realized by AFM lithography of the above materials near future.

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  • 鉄系超伝導物質のエピタキシャル薄膜成長と超伝導デバイスの試作

    Grant number:10J08411  2010.4 - 2012.3

    日本学術振興会 特別研究員奨励費 DC2  科学研究費助成事業  特別研究員奨励費

    片瀬 貴義

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    Authorship:Principal investigator  Grant type:Competitive

    高温超伝導体は、高い温度までゼロ抵抗で電流を流すことができるため、理想的な電力輸送素子として期待されている。しかし、銅酸化物系超伝導体を用いた超伝導線材では、傾角粒界において臨界電流密度(J_c)が急激に劣化するので、1MA/cm^2以上の高いJ_cを示す線材を実現するためには、結晶粒を強く面内配向させる必要があった。
    近年発見された鉄系超伝導体は、超伝導転移温度が50Kを超える新しい高温超伝導体で、100T級の高い上部臨界磁場を示すため、超伝導線材としての応用が期待されている。特に、鉄系超伝導体は、銅酸化物系に比べて、超伝導特性の異方性が極端に小さい特徴を持っているため、銅酸化物系とは異なった、結晶粒界での伝導特性を示すと期待される。
    本研究では、バイクリスタル基板を用いて、Co添加BaFe_2As_2エピタキシャル薄膜に傾角3~45度まで幅広い範囲の傾角粒界接合を形成し、傾角粒界がJ_cに与える影響を調べた。傾角粒界を介したJ_cは9度まで維持され、この臨界角を超えても臨界電流密度が急激に低下しない(高い特性角)ことが分かった。この臨界角は、銅酸化物系のYba_2Cu_3O_<7-δ>の値3-5度よりも大きく、線材基板の面内配向制御の制約が少ないことを意味しており、鉄系超伝導体の線材応用への優位性を明らかにした。
    実際に、イオンビームアシスト堆積法により作製された薄膜線材基板上にCo添加BaFe_2As_2膜を作製し、面内配向度が5-7度の基板でも単結晶基板上と同等の超伝導特性を示す薄膜線材を実現し、高磁場応用の高J_c線材としての応用性を示した。

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