Informatics / Computational science

Natural Science / Semiconductors, optical properties of condensed matter and atomic physics

Tokyo Institute of Technology   Materials and Structures Laboratory   Associate Professor

2003.12 - 2010.7

-:東京工業大学 助教授

2003

-:

2003

:東京工業大学 講師

2002 - 2003

:

2002 - 2003

:東京工業大学 助手

1991 - 2002

:

1991 - 2002

Inverse‐Perovskite Ba3BO (B = Si and Ge) as a High Performance Environmentally Benign Thermoelectric Material with Low Lattice Thermal Conductivity Reviewed

Xinyi He, Shigeru Kimura, Takayoshi Katase, Terumasa Tadano, Satoru Matsuishi, Makoto Minohara, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya

Advanced Science   - 2307058   2023.12

Significant effects of epitaxial strain on the nonlinear transport properties in Ca2RuO4 thin films with the current-driven transition Reviewed

Keiji Tsubaki, Masashi Arita, Takayoshi Katase, Toshio Kamiya, Atsushi Tsurumaki-Fukuchi, Yasuo Takahashi

Japanese Journal of Applied Physics   2023.8

Dynamics of an Electrically Driven Phase Transition in Ca₂RuO₄ Thin Films: Nonequilibrium High‐Speed Resistive Switching in the Absence of an Abrupt Thermal Transition

Keiji Tsubaki, Atsushi Tsurumaki‐Fukuchi, Takayoshi Katase, Toshio Kamiya, Masashi Arita, Yasuo Takahashi

Advanced Electronic Materials   2023.4

Hydride Anion Substitution Boosts Thermoelectric Performance of Polycrystalline SrTiO 3 via Simultaneous Realization of Reduced Thermal Conductivity and High Electronic Conductivity Reviewed

Xinyi He, Seiya Nomoto, Takehito Komatsu, Takayoshi Katase, Terumasa Tadano, Suguru Kitani, Hideto Yoshida, Takafumi Yamamoto, Hiroshi Mizoguchi, Keisuke Ide, Hidenori Hiramatsu, Hitoshi Kawaji, Hideo Hosono, Toshio Kamiya

Advanced Functional Materials   2023.4

Local electronic structure of dilute hydrogen in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>β</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mi>Ga</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> probed by muons

M. Hiraishi, H. Okabe, A. Koda, Ryosuke Kadono, Takeo Ohsawa, Naoki Ohashi, Keisuke Ide, T. Kamiya, H. Hosono

Physical Review B   107 ( 4 )   2023.1

Low-temperature-processable amorphous-oxide-semiconductor-based phosphors for durable light-emitting diodes Reviewed

Keisuke Ide, Naoto Watanabe, Takayoshi Katase, Masato Sasase, Junghwan Kim, Shigenori Ueda, Koji Horiba, Hiroshi Kumigashira, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

Applied Physics Letters   2022.11

Design, Synthesis, and Optoelectronic Properties of the High-Purity Phase in Layered AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf) Semiconductors

Akihiro Shiraishi, Shigeru Kimura, Xinyi He, Naoto Watanabe, Takayoshi Katase, Keisuke Ide, Makoto Minohara, Kosuke Matsuzaki, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya

Inorganic Chemistry   2022.5

Degenerated Hole Doping and Ultra-Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution Reviewed

Xinyi He, Haoyun Zhang, Takumi Nose, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

ADVANCED SCIENCE   9 ( 13 )   2022.5

High-Mobility Metastable Rock-Salt Type (Sn,Ca)Se Thin Film Stabilized by Direct Epitaxial Growth on a YSZ (111) Single-Crystal Substrate

Xinyi He, Jinshuai Chen, Takayoshi Katase, Makoto Minohara, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya

ACS Applied Materials &amp; Interfaces   2022.4

Photoinduced transient states of antiferromagnetic orderings in La1/3Sr2/3FeO3 and SrFeO3-delta thin films observed through time-resolved resonant soft x-ray scattering

Kohei Yamamoto, Tomoyuki Tsuyama, Suguru Ito, Kou Takubo, Iwao Matsuda, Niko Pontius, Christian Schuessler-Langeheine, Makoto Minohara, Hiroshi Kumigashira, Yuichi Yamasaki, Hironori Nakao, Youichi Murakami, Takayoshi Katase, Toshio Kamiya, Hiroki Wadati

NEW JOURNAL OF PHYSICS   24 ( 4 )   2022.4

Effect of intentional chemical doping on crystallographic and electric properties of the pyrochlore Bi2Sn2O7 Reviewed

Makoto Minohara, Naoto Kikuchi, Kouhei Tsukuda, Yuka Dobashi, Akane Samizo, Keishi Nishio, Xinyi He, Takayoshi Katase, Toshio Kamiya, Yoshihiro Aiura

MATERIALS & DESIGN   216   2022.4

Electronic and Lattice Thermal Conductivity Switching by 3D-2D Crystal Structure Transition in Nonequilibrium (Pb1-xSnx)Se Reviewed

Yusaku Nishimura, Xinyi He, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Suguru Kitani, Kota Hanzawa, Shigenori Ueda, Hidenori Hiramatsu, Hitoshi Kawaji, Hideo Hosono, Toshio Kamiya

ADVANCED ELECTRONIC MATERIALS   2022.3

Tuning of Hole Carrier Density in p-type α-SnWO4 by Exploiting Oxygen Defects

Makoto Minohara, Makoto Minohara, Yuka Dobashi, Naoto Kikuchi, Akane Samizo, Takashi Honda, Xinyi He, Takayoshi Katase, Toshio Kamiya, Keishi Nishio, Yoshihiro Aiura

Materials Advances   2022

Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn₃N₂Films on a Glass Substrate Reviewed

Li, K., Shimizu, A., He, X., Ide, K., Hanzawa, K., Matsuzaki, K., Katase, T., Hiramatsu, H., Hosono, H., Zhang, Q., Kamiya, T.

ACS Applied Electronic Materials   4 ( 4 )   2022

Breaking of Thermopower-Conductivity Trade-Off in LaTiO3 Film around Mott Insulator to Metal Transition

Takayoshi Katase, Xinyi He, Terumasa Tadano, Jan M. Tomczak, Takaki Onozato, Keisuke Ide, Bin Feng, Tetsuya Tohei, Hidenori Hiramatsu, Hiromichi Ohta, Yuichi Ikuhara, Hideo Hosono, Toshio Kamiya

ADVANCED SCIENCE   8 ( 23 )   2021.12

Large phonon drag thermopower boosted by massive electrons and phonon leaking in LaAlO3/LaNiO3/LaAlO3 heterostructure

Masatoshi Kimura, Xinyi He, Takayoshi Katase, Terumasa Tadano, Jan M. Tomczak, Makoto Minohara, Ryotaro Aso, Hideto Yoshida, Keisuke Ide, Shigenori Ueda, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya

NANO LETTERS   21 ( 21 )   9240 - 9246   2021.11

Ion Substitution Effect on Defect Formation in Two-Dimensional Transition Metal Nitride Semiconductors, AETiN(2) (AE = Ca, Sr, and Ba)

Xinyi He, Takayoshi Katase, Keisuke Ide, Hideo Hosono, Toshio Kamiya

INORGANIC CHEMISTRY   60 ( 14 )   10227 - 10234   2021.7

Local Structure Properties of Hydrogenated and Nonhydrogenated Amorphous In–Ga–Zn–O Thin Films Using XAFS and High-Energy XRD

Loku Singgappulige Rosantha Kumara, Kyohei Ishikawa, Keisuke Ide, Hideo Hosono, Toshio Kamiya, Osami Sakata

The Journal of Physical Chemistry C   125 ( 24 )   13619 - 13628   2021.6

Publisher's Note: “Hard x-ray photoemission study on strain effect in LaNiO3 thin films” [Appl. Phys Lett. 118, 161601 (2021)]

Yasushi Hotta, Akira Yasui, Takayoshi Katase, Yasumasa Takagi, Kohei Yamagami, Keisuke Ikeda, A. Hariki, Toshio Kamiya, Yujun Zhang, Hiroki Wadati

Applied Physics Letters   118   2021.6

Hard x-ray photoemission study on strain effect in LaNiO3 thin films Reviewed

Kohei Yamagami, Keisuke Ikeda, Atushi Hariki, Yujun Zhang, Akira Yasui, Yasumasa Takagi, Takayoshi Katase, Toshio Kamiya, Hiroki Wadati

Appl. Phys. Lett.   118 ( 16 )   161601 - 161601   2021.4

Reversible 3D-2D structural phase transition and giant electronic modulation in nonequilibrium alloy semiconductor, lead-tin-selenide

Takayoshi Katase, Yudai Takahashi, Xinyi He, Terumasa Tadano, Keisuke Ide, Hideto Yoshida, Shiro Kawachi, Jun-ichi Yamaura, Masato Sasase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

Science Advances   7 ( 12 )   eabf2725 - eabf2725   2021.3

Double Charge Polarity Switching in Sb-Doped SnSe with Switchable Substitution Sites

Chihiro Yamamoto, Xinyi He, Takayoshi Katase, Keisuke Ide, Yosuke Goto, Yoshikazu Mizuguchi, Akane Samizo, Makoto Minohara, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

ADVANCED FUNCTIONAL MATERIALS   31 ( 8 )   2021.2

Understanding and controlling electronic defects in amorphous oxide semiconductor

Keisuke Ide, Hideo Hosono, Toshio Kamiya

Digest of Technical Papers - SID International Symposium   52 ( 1 )   97 - 99   2021

Shallow Valence Band of Rutile GeO2 and P-type Doping

Christian A. Niedermeier, Keisuke Ide, Takayoshi Katase, Hideo Hosono, Toshio Kamiya

JOURNAL OF PHYSICAL CHEMISTRY C   124 ( 47 )   25721 - 25728   2020.11

Stable and Tunable Current-Induced Phase Transition in Epitaxial Thin Films of Ca2RuO4 Reviewed

Atsushi Tsurumaki-Fukuchi, Keiji Tsubaki, Takayoshi Katase, Toshio Kamiya, Masashi Arita, Yasuo Takahashi

ACS Applied Materials & Interfaces   2020.5

Thermoelectric (BaxSr1-x)Si-2 films prepared by sputtering method over the barium solubility limit

Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo

JAPANESE JOURNAL OF APPLIED PHYSICS   59   2020.4

Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO3 , BaSnO3 , and SrTiO3 Reviewed

Christian A. Niedermeier, Yu Kumagai, Keisuke Ide, Takayoshi Katase, Fumiyasu Oba, Hideo Hosono, Toshio Kamiya

Physical Review B   101 ( 12 )   2020.3

Large power-factor enhancement by breaking thermoelectric trade-off relation in transition metal oxide, LaNiO₃

Higuchi Yuhi, Katase Takayoshi, Terumasa Tadano, Jun Fujioka, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

JSAP Annual Meetings Extended Abstracts   2020.1   3583 - 3583   2020.2

Fabrication and characterization of (CaxSr1-x)Si2 films prepared by co-sputtering method Reviewed

K. Aoyama, T. Shimizu, H. Kuramochi, M. Mesuda, R. Akiike, K. Ide, T. Katase, T. Kamiya, Y. Kimura, H. Funakubo

MRS Advances   5 ( 10 )   451 - 458   2020.1

Electronic defects in amorphous oxide semiconductor and recent development

Keisuke Ide, Hideo Hosono, Toshio Kamiya

2020 TWENTY-SEVENTH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 20): TFT TECHNOLOGIES AND FPD MATERIALS   2020

Preparations of AeSi₂ films by a co-sputtering process

Aoyama Kodai, Shimizu Takao, Kuramochi Hideto, Mesuda Masami, Akiike Ryo, Ide Keisuke, Katase Takayoshi, Kamiya Toshio, Kimura Yoshisato, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts   2019.2   2999 - 2999   2019.9

New crystal structure built from a GeO6-GeO5 polyhedra network with high thermal stability: b-SrGe2O5 Reviewed

Christian A. Niedermeier, Junichi Yamaura, Jiazhen Wu, Xinyi He, Takayoshi Katase, Hideo Hosono, Toshio Kamiya

ACS Appl. Electron. Mater.   1   1989 - 1993   2019.9

New Amorphous In-Ga-Zn-O Thin-Film Transistor-Based Optical Pixel Sensor for Optical Input Signal With Short Wavelength

Chia-En Wu, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Chih-Lung Lin, Toshio Kamiya

IEEE TRANSACTIONS ON ELECTRON DEVICES   66 ( 9 )   3848 - 3853   2019.9

Symmetric Ambipolar Thin-Film Transistors and High-Gain CMOS-like Inverters Using Environmentally Friendly Copper Nitride Reviewed

Kosuke Matsuzaki, Takayoshi Katase, Toshio Kamiya, Hideo Hosono

ACS Appl. Mater. Interfaces   11   35132 - 35137   2019.8

Intrinsic and Extrinsic Defects in Layered Nitride Semiconductor SrTiN2

Xinyi He, Zewen Xiao, Takayoshi Katase, Keisuke Ide, Hideo Hosono, Toshio Kamiya

JOURNAL OF PHYSICAL CHEMISTRY C   123 ( 32 )   19307 - 19314   2019.8

Effects of Base Pressure on Growth and Optoelectronic Properties of Amorphous In-Ga-Zn-O: Ultralow Optimum Oxygen Supply and Bandgap Widening

Keisuke Ide, Kyohei Ishikawa, Haochun Tang, Takayoshi Katase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   216 ( 5 )   2019.3

Multiple Color Inorganic Thin-Film Phosphor, RE-Doped Amorphous Gallium Oxide (RE = Rare Earth: Pr, Sm, Tb, and Dy), Deposited at Room Temperature

Naoto Watanabe, Keisuke Ide, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   216 ( 5 )   2019.3

Electronic Defects in Amorphous Oxide Semiconductors: A Review

Keisuke Ide, Kenji Nomura, Hideo Hosono, Toshio Kamiya

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   216 ( 5 )   2019.3

Thermoelectric property for Ba_xSr_1-xSi₂ films by co-sputtering process

Aoyama Kodai, Shimizu Takao, Kuramochi Hideto, Mesuda Masami, Akiike Ryo, Ide Keisuke, Katase Takayoshi, Kamiya Toshio, Kimura Yoshisato, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts   2019.1   1843 - 1843   2019.2

Insulator-like behavior coexisting with metallic electronic structure in strained FeSe thin films grown by molecular beam epitaxy Reviewed

Kota Hanzawa, Yuta Yamaguchi, Yukiko Obata, Satoru Matsuishi, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

PHYSICAL REVIEW B   99 ( 035148 )   2019.1

Electronic structure of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muon Reviewed

Kojima, K.M., Hiraishi, M., Okabe, H., Koda, A., Kadono, R., Ide, K., Matsuishi, S., Kumomi, H., Kamiya, T., Hosono, H.

Applied Physics Letters   115 ( 12 )   2019

Metal oxide semiconductor thin-films and related devices

Mamoru Furuta, Mutsumi Kimura, Toshio Kamiya, Yukiharu Uraoka

Japanese Journal of Applied Physics   58 ( 9 )   2019

Transition metal-doped amorphous oxide semiconductor thin-film phosphor, chromium-doped amorphous gallium oxide Reviewed

Keisuke Ide, Yuki Futakado, Naoto Watanabe, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

physica status solidi (a)   1800198   2018.8

Multiple states and roles of hydrogen in p-type SnS semiconductors

Zewen Xiao, Fan-Yong Ran, Min Liao, Hidenori Hiramatsu, Keisuke Ide, Hideo Hosono, Toshio Kamiya

PHYSICAL CHEMISTRY CHEMICAL PHYSICS   20 ( 32 )   20952 - 20956   2018.8

Effects of impurity hydrogen in amorphous In-Ga-Zn-O: ultralow optimum oxygen supply for ultrahigh vacuum sputtering and bandgap widening by impurity hydrogen Reviewed

Keisuke Ide, Kyohei Ishikawa, Haochun Tang, Takayoshi Katase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

physica status solidi (a)   8   1700832   2018.2

Multi-color light-emitting thin films based on ultra-wide bandgap amorphous oxide semiconductor deposited at room temperature on glass Reviewed

Naoto Watanabe, Keisuke Ide, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

physica status solidi (a)   8   1700833   2018.1

An Exceptionally Narrow Band-Gap (similar to 4 eV) Silicate Predicted in the Cubic Perovskite Structure: BaSiO3 Reviewed

Hidenori Hiramatsu, Hitoshi Yusa, Ryo Igarashi, Yasuo Ohishi, Toshio Kamiya, Hideo Hosono

INORGANIC CHEMISTRY   56 ( 17 )   10535 - 10542   2017.9

The Unique Electronic Structure of Mg2Si: Shaping the Conduction Bands of Semiconductors with Multicenter Bonding Reviewed

Hiroshi Mizoguchi, Yoshinori Muraba, Daniel C. Fredrickson, Satoru Matsuishi, Toshio Kamiya, Hideo Hosono

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION   56 ( 34 )   10135 - 10139   2017.8

Key Factors for Insulator-Superconductor Transition in FeSe Thin Films by Electric Field Reviewed

Kota Hanzawa, Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY   27 ( 4 )   2017.6

P-187: Electronic Structures of Various Color Light-Emitting Amorphous Oxide Semiconductor Thin Films

Naoto Watanabe, Junghwan Kim, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

SID Symposium Digest of Technical Papers   48 ( 1 )   1974 - 1976   2017.5

Electron effective mass and mobility limits in degenerate perovskite stannate BaSnO3 Reviewed

Christian A. Niedermeier, Sneha Rhode, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya, Michelle A. Moram

PHYSICAL REVIEW B   95 ( 16 )   2017.4

BaFe2(As1-xPx)(2) (x=0.22-0.42) thin films grown on practical metal-tape substrates and their critical current densities Reviewed

Hidenori Hiramatsu, Hikaru Sato, Toshio Kamiya, Hideo Hosono

SUPERCONDUCTOR SCIENCE & TECHNOLOGY   30 ( 4 )   2017.4

Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In-Ga-Zn-O thin-film transistors

Keisuke Ide, Mitsuho Kikuchi, Masato Ota, Masato Sasase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

JAPANESE JOURNAL OF APPLIED PHYSICS   56 ( 3 )   2017.3

Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor Reviewed

Junghwan Kim, Takumi Sekiya, Norihiko Miyokawa, Naoto Watanabe, Koji Kimoto, Keisuke Ide, Yoshitake Toda, Shigenori Ueda, Naoki Ohashi, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

NPG ASIA MATERIALS   9   2017.3

Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs Reviewed

Hideo Hosono, Junghwan Kim, Yoshitake Toda, Toshio Kamiya, Satoru Watanabe

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA   114 ( 2 )   233 - 238   2017.1

Publisher's Note: Amorphous Gallium Oxide as an Improved Host for Inorganic Light-Emitting Thin Film Semiconductor Fabricated at Room Temperature on Glass (vol 6, pg P410, 2017) Reviewed

Naoto Watanabe, Junghwan Kim, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Shigenori Ueda, Hideo Hosono, Toshio Kamiya

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   6 ( 8 )   XI - XI   2017

Amorphous Gallium Oxide as an Improved Host for Inorganic Light-Emitting Thin Film Semiconductor Fabricated at Room Temperature on Glass (vol 6, pg P410, 2017) Reviewed

Naoto Watanabe, Junghwan Kim, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Shigenori Ueda, Hideo Hosono, Toshio Kamiya

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   6 ( 7 )   X1 - X1   2017

Amorphous Gallium Oxide as an Improved Host for Inorganic Light-Emitting Thin Film Semiconductor Fabricated at Room Temperature on Glass Reviewed

Naoto Watanabe, Junghwan Kim, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Shigenori Ueda, Hideo Hosono, Toshio Kamiya

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   6 ( 7 )   P410 - P414   2017

Multiple Roles of Hydrogen Treatments in Amorphous In-Ga-Zn-O Films Reviewed

Haochun Tang, Yosuke Kishida, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Satoru Matsuishi, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   6 ( 7 )   P365 - P372   2017

Amorphous pnictide semiconductor BaZn2As2 exhibiting high hole mobility Reviewed

Zewen Xiao, Fan-Yong Ran, Min Liao, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

APPLIED PHYSICS LETTERS   109 ( 24 )   2016.12

Enhanced critical-current in P-doped BaFe2As2 thin films on metal substrates arising from poorly aligned grain boundaries Reviewed

Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

SCIENTIFIC REPORTS   6   2016.11

Preface Reviewed

David Ginley, Claes-G. Granqvist, George Kiriakidis, Andreas Klein, Toshio Kamiya, Hideo Hosono

Thin Solid Films   614   43   2016.9

Effects of thermal annealing on elimination of deep defects in amorphous In-Ga-Zn-O thin-film transistors Reviewed

Haochun Tang, Keisuke Ide, Hidenori Hiramatsu, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

THIN SOLID FILMS   614   73 - 78   2016.9

Ultrawide band gap amorphous oxide semiconductor, Ga-Zn-O Reviewed

Junghwan Kim, Norihiko Miyokawa, Takumi Sekiya, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

THIN SOLID FILMS   614   84 - 89   2016.9

Novel solid-phase epitaxy for multi-component materials with extremely high vapor pressure elements: An application to KFe2As2 Reviewed

Taisuke Hatakeyama, Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

APPLIED PHYSICS EXPRESS   9 ( 5 )   2016.5

Transparent amorphous oxide semiconductor thin film phosphor, In-Mg-O:Eu Reviewed

Junghwan Kim, Norihiko Miyokawa, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   124 ( 5 )   532 - 535   2016.5

69-4: NBIS-Stable Oxide Thin-Film Transistors Using Ultra-Wide Bandgap Amorphous Oxide Semiconductors

Junghwan Kim, Nobuhiro Nakamura, Toshio Kamiya, Hideo Hosono

SID Symposium Digest of Technical Papers   47 ( 1 )   951 - 953   2016.5

N-type conduction in SnS by anion substitution with Cl Reviewed

Hiroshi Yanagi, Yuki Iguchi, Taiki Sugiyama, Toshio Kamiya, Hideo Hosono

Applied Physics Express   9 ( 5 )   2016.4

Solid phase epitaxial growth of high mobility La: BaSnO3 thin films co-doped with interstitial hydrogen Reviewed

Christian A. Niedermeier, Sneha Rhode, Sarah Fearn, Keisuke Ide, Michelle A. Moram, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

APPLIED PHYSICS LETTERS   108 ( 17 )   2016.4

Electric field-induced superconducting transition of insulating FeSe thin film at 35 K Reviewed

Kota Hanzawa, Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA   113 ( 15 )   3986 - 3990   2016.4

Nonequilibrium Rock-Salt-Type Pb-Doped SnSe with High Carrier Mobilities approximate to 300 cm(2)/(Vs) Reviewed

Takeshi Inoue, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

CHEMISTRY OF MATERIALS   28 ( 7 )   2278 - 2286   2016.4

Oxide TFTs Reviewed

Toshio Kamiya, Hideo Hosono

Handbook of Visual Display Technology   1111 - 1144   2016.1

SnS thin films prepared by H2S-free process and its p-type thin film transistor Reviewed

Fan-Yong Ran, Zewen Xiao, Hidenori Hiramatsu, Keisuke Ide, Hideo Hosono, Toshio Kamiya

AIP ADVANCES   6 ( 1 )   2016.1

Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor Reviewed

Junghwan Kim, Norihiko Miyokawa, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

AIP ADVANCES   6 ( 1 )   2016.1

Why high-pressure sputtering must be avoided to deposit a-In-Ga-Zn-O films Reviewed

Keisuke Ide, Mitsuho Kikuchi, Masato Sasase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

2016 23RD INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD)   298 - 301   2016

Difficulty of carrier generation in orthorhombic PbO Reviewed

Liao Min, Takemoto Seiji, Xiao Zewen, Toda Yoshitake, Tada Tomofumi, Ueda Shigenori, Kamiya Toshio, Hosono Hideo

Journal of Applied Physics   119 ( 16 )   2016

Electron Confinement in Channel Spaces for One-Dimensional Electride Reviewed

Yaoqing Zhang, Zewen Xiao, Toshio Kamiya, Hideo Hosono

JOURNAL OF PHYSICAL CHEMISTRY LETTERS   6 ( 24 )   4966 - 4971   2015.12

Heteroepitaxial growth of SnSe films by pulsed laser deposition using Se-rich targets Reviewed

Takeshi Inoue, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

JOURNAL OF APPLIED PHYSICS   118 ( 20 )   2015.11

Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films Reviewed

Haochun Tang, Kyohei Ishikawa, Keisuke Ide, Hidenori Hiramatsu, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

JOURNAL OF APPLIED PHYSICS   118 ( 20 )   2015.11

Ligand-Hole in [SnI6] Unit and Origin of Band Gap in Photovoltaic Perovskite Variant Cs2SnI6 Reviewed

Zewen Xiao, Hechang Lei, Xiao Zhang, Yuanyuan Zhou, Hideo Hosono, Toshio Kamiya

BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN   88 ( 9 )   1250 - 1255   2015.9

Analyses of Surface and Interfacial Layers in Polycrystalline Cu2O Thin-Film Transistors Reviewed

Fan-Yong Ran, Masataka Taniguti, Hideo Hosono, Toshio Kamiya

JOURNAL OF DISPLAY TECHNOLOGY   11 ( 9 )   720 - 724   2015.9

Detection of dead layers and defects in polycrystalline Cu2O thin-film transistors by x-ray reflectivity and photoresponse spectroscopy analyses Reviewed

Fan-Yong Ran, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya, Masataka Taniguti

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   33 ( 5 )   2015.9

Effects of sulfur substitution in amorphous InGaZnO4: optical properties and first-principles calculations Reviewed

Junghwan Kim, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   123 ( 1439 )   537 - 541   2015.7

Fabrication and opto-electrical properties of amorphous (Zn, B) O thin film by pulsed laser deposition Reviewed

Hao-Chun Tang, Junghwan Kim, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   123 ( 1439 )   523 - 526   2015.7

Origin of Lower Film Density and Larger Defect Density in Amorphous In-Ga-Zn-O Deposited at High Total Pressure Reviewed

Jakub Grochowski, Yuichiro Hanyu, Katsumi Abe, Jakub Kaczmarski, Jan Dyczewski, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

JOURNAL OF DISPLAY TECHNOLOGY   11 ( 6 )   523 - 527   2015.6

Vortex Pinning Properties of Phosphorous-Doped BaFe2As2 Epitaxial Films: Comparison Between (La, Sr)(Al, Ta)O-3 and MgO Substrates Reviewed

Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY   25 ( 3 )   2015.6

n-type conversion of SnS by isovalent ion substitution: Geometrical doping as a new doping route Reviewed

Fan-Yong Ran, Zewen Xiao, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

SCIENTIFIC REPORTS   5   2015.5

Route to n-type doping in SnS Reviewed

Zewen Xiao, Fan-Yong Ran, Hideo Hosono, Toshio Kamiya

APPLIED PHYSICS LETTERS   106 ( 15 )   2015.4

Widely bandgap tunable amorphous Cd-Ga-O oxide semiconductors exhibiting electron mobilities ≥10-cm2-V-1-s-1 Reviewed

Yanagi, H., Sato, C., Kimura, Y., Suzuki, I., Omata, T., Kamiya, T., Hosono, H.

Applied Physics Letters   106 ( 8 )   82106   2015.2

Advances in oxide thin-film transistors in recent decade and their future Reviewed

Hideya Kumomi, Toshio Kamiya, Hideo Hosono

ECS Transactions   67 ( 1 )   3 - 8   2015

Effects of Pb Doping on Hole Transport Properties and Thin-Film Transistor Characteristics of SnO Thin Films Reviewed

Min Liao, Zewen Xiao, Fan-Yong Ran, Hideya Kumomi, Toshio Kamiya, Hideo Hosono

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   4 ( 3 )   Q26 - Q30   2015

Intrinsic defects in a photovoltaic perovskite variant Cs2SnI6 Reviewed

Zewen Xiao, Yuanyuan Zhou, Hideo Hosono, Toshio Kamiya

PHYSICAL CHEMISTRY CHEMICAL PHYSICS   17 ( 29 )   18900 - 18903   2015

Effects of High-Temperature Annealing on Operation Characteristics of a-In-Ga-Zn-O TFTs Reviewed

Yuichiro Hanyu, Katsumi Abe, Kay Domen, Kenji Nomura, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

JOURNAL OF DISPLAY TECHNOLOGY   10 ( 11 )   979 - 983   2014.11

Two-Dimensional Transition-Metal Electride Y2C Reviewed

Xiao Zhang, Zewen Xiao, Hechang Lei, Yoshitake Toda, Satoru Matsuishi, Toshio Kamiya, Shigenori Ueda, Hideo Hosono

CHEMISTRY OF MATERIALS   26 ( 22 )   6638 - 6643   2014.11

Positive-Bias Stress Test on Amorphous In-Ga-Zn-O Thin Film Transistor: Annealing-Temperature Dependence Reviewed

Kay Domen, Takaya Miyase, Katsumi Abe, Hideo Hosono, Toshio Kamiya

JOURNAL OF DISPLAY TECHNOLOGY   10 ( 11 )   975 - 978   2014.11

Narrow Bandgap in beta-BaZn2As2 and Its Chemical Origins Reviewed

Zewen Xiao, Hidenori Hiramatsu, Shigenori Ueda, Yoshitake Toda, Fan-Yong Ran, Jiangang Guo, Hechang Lei, Satoru Matsuishi, Hideo Hosono, Toshio Kamiya

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY   136 ( 42 )   14959 - 14965   2014.10

Growth of c-Axis-Oriented Superconducting KFe2As2 Thin Films Reviewed

Hidenori Hiramatsu, Shogo Matsuda, Hikaru Sato, Toshio Kamiya, Hideo Hosono

ACS APPLIED MATERIALS & INTERFACES   6 ( 16 )   14293 - 14301   2014.8

Positive Gate Bias Instability Induced by Diffusion of Neutral Hydrogen in Amorphous In-Ga-Zn-O Thin-Film Transistor Reviewed

Kay Domen, Takaya Miyase, Katsumi Abe, Hideo Hosono, Toshio Kamiya

IEEE ELECTRON DEVICE LETTERS   35 ( 8 )   832 - 834   2014.8

Fabrication and characterization of ZnS:(Cu,Al) thin film phosphors on glass substrates by pulsed laser deposition Reviewed

Junghwan Kim, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

THIN SOLID FILMS   559   18 - 22   2014.5

High critical-current density with less anisotropy in BaFe2(As,P)(2) epitaxial thin films: Effect of intentionally grown c-axis vortex-pinning centers Reviewed

Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

APPLIED PHYSICS LETTERS   104 ( 18 )   2014.5

Epitaxial growth and electronic structure of a layered zinc pnictide semiconductor, beta-BaZn2As2 Reviewed

Zewen Xiao, Fan-Yong Ran, Hidenori Hiramatsu, Satoru Matsuishi, Hideo Hosono, Toshio Kamiya

THIN SOLID FILMS   559   100 - 104   2014.5

Mobility-and temperature-dependent device model for amorphous In-Ga-Zn-O thin-film transistors Reviewed

Katsumi Abe, Ayumu Sato, Kenji Takahashi, Hideya Kumomi, Toshio Kamiya, Hideo Hosono

THIN SOLID FILMS   559   40 - 43   2014.5

Critical factor for epitaxial growth of cobalt-doped BaFe2As2 films by pulsed laser deposition Reviewed

Hiramatsu, Hidenori, Sato, Hikaru, Katase, Takayoshi, Kamiya, Toshio, Hosono, Hideo

Applied Physics Letters   104 ( 17 )   72602   2014

Electric double-layer transistor using layered iron selenide Mott insulator TlFe1.6Se2 Reviewed

Katase, Takayoshi, Hiramatsu, Hidenori, Kamiya, Toshio, Hosono, Hideo

Proceedings of the National Academy of Sciences of the United States of America   111 ( 11 )   3979 - 3983   2014

Film Texture, Hole Transport and Field-Effect Mobility in Polycrystalline SnO Thin Films on Glass Reviewed

Po-Ching Hsu, Chung-Chih Wu, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   3 ( 9 )   Q3040 - Q3044   2014

Magnetic structure and electromagnetic properties of LnCrAsO with a ZrCuSiAs-type structure (Ln = La, Ce, Pr, and Nd) Reviewed

Park, S.-W., Mizoguchi, H., Kodama, K., Shamoto, S.-I., Otomo, T., Matsuishi, S., Kamiya, T., Hosono, H.

Inorganic Chemistry   52 ( 23 )   13363 - 13368   2013.12

Unusual pressure effects on the superconductivity of indirectly electron-doped (Ba1-xLax)Fe2As2 epitaxial films Reviewed

Katase, T., Sato, H., Hiramatsu, H., Kamiya, T., Hosono, H.

Physical Review B - Condensed Matter and Materials Physics   88 ( 14 )   503   2013

Anomalous scaling behavior in a mixed-state Hall effect of a cobalt-doped BaFe2As2 epitaxial film with a high critical current density over 1 MA/cm(2) Reviewed

Sato, Hikaru, Katase, Takayoshi, Kang, Won Nam, Hiramatsu, Hidenori, Kamiya, Toshio, Hosono, Hideo

Physical Review B   87 ( 6 )   064504   2013

Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films Reviewed

Katase, T., Hiramatsu, H., Kamiya, T., Hosono, H.

New Journal of Physics   15   073019   2013

Superconducting Properties and Phase Diagram of Indirectly Electron-Doped (Sr1-xLax)Fe2As2 Epitaxial Films Grown by Pulsed Laser Deposition Reviewed

Hiramatsu, Hidenori, Katase, Takayoshi, Kamiya, Toshio, Hosono, Hideo

Ieee Transactions on Applied Superconductivity   23 ( 3 )   7300405   2013

3-D Stacked complementary TFT devices using n-Type a-IGZO and p-Type F8T2 TFTs comparison between stacked and sided configurations

Takayuki Hasegawa, Masashi Inoue, Tokiyoshi Matsuda, Mutsumi Kimura, Kenji Nomura, Toshio Kamiya, Hideo Hosono

Proceedings of the International Display Workshops   1   331 - 332   2013

Doping effects in amorphous oxides Reviewed

Funabiki, Fuji, Kamiya, Toshio, Hosono, Hideo

Journal of the Ceramic Society of Japan   120 ( 1407 )   447 - 457   2012.11

Band alignment of InGaZnO4/Si interface by hard x-ray photoelectron spectroscopy Reviewed

Lee, Kyeongmi, Nomura, Kenji, Yanagi, Hiroshi, Kamiya, Toshio, Ikenaga, Eiji, Sugiyama, Takeharu, Kobayashi, Keisuke, Hosono, Hideo

Journal of Applied Physics   112 ( 3 )   2012.8

Operation model with carrier-density dependent mobility for amorphous In-Ga-Zn-O thin-film transistors Reviewed

Katsumi Abe, Kenji Takahashi, Ayumu Sato, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo Hosono

THIN SOLID FILMS   520 ( 10 )   3791 - 3795   2012.3

Stability and high-frequency operation of amorphous In-Ga-Zn-O thin-film transistors with various passivation layers Reviewed

Kenji Nomura, Toshio Kamiya, Hideo Hosono

THIN SOLID FILMS   520 ( 10 )   3778 - 3782   2012.3

Electron injection barriers between air-stable electride with low work function, C12A7:e(-), and pentacene, C-60 and copper phthalocyanine Invited Reviewed

Yanagi, Hiroshi, Kuroda, Toshifumi, Kim, Ki-Beom, Toda, Yoshitake, Kamiya, Toshio, Hosono, Hideo

Journal of Materials Chemistry   22 ( 10 )   4278 - 4281   2012.1

Thin film growth by pulsed laser deposition and properties of 122-type iron-based superconductor AE(Fe1-xCox)(2)As-2 (AE = alkaline earth) Reviewed

Katase, Takayoshi, Hiramatsu, Hidenori, Kamiya, Toshio, Hosono, Hideo

Superconductor Science & Technology   25 ( 8 )   084015   2012

Microstructure and transport properties of [0 0 1]-tilt bicrystal grain boundaries in iron pnictide superconductor, cobalt-doped BaFe 2As 2 Reviewed

Hiramatsu, H., Katase, T., Ishimaru, Y., Tsukamoto, A., Kamiya, T., Tanabe, K., Hosono, H.

Materials Science and Engineering B: Solid-State Materials for Advanced Technology   177 ( 7 )   515 - 519   2012

Identical effects of indirect and direct electron doping of superconducting BaFe2As2 thin films Reviewed

Katase, Takayoshi, Iimura, Soshi, Hiramatsu, Hidenori, Kamiya, Toshio, Hosono, Hideo

Physical Review B   85 ( 14 )   140516   2012

Light Irradiation History Sensor Using Amorphous In-Ga-Zn-O Thin-Film Transistor Exposed to Ozone Annealing Reviewed

Kimura, Mutsumi, Hasegawa, Takayuki, Ide, Keisuke, Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo

Ieee Electron Device Letters   33 ( 3 )   384 - 386   2012

Maximum applied voltage detector using amorphous In-Ga-Zn-O thin-film transistor exposed to ozone annealing Reviewed

Kimura, Mutsumi, Hasegawa, Takayuki, Ide, Keisuke, Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo

Solid-State Electronics   75   74 - 76   2012

Photovoltaic properties of n-type amorphous In-Ga-Zn-O and p-type single crystal Si heterojunction solar cells: Effects of Ga content Reviewed

Lee, Kyeongmi, Nomura, Kenji, Yanagi, Hiroshi, Kamiya, Toshio, Hosono, Hideo

Thin Solid Films   520 ( 10 )   3808 - 3812   2012

Biaxially textured cobalt-doped BaFe2As2 films with high critical current density over 1 MA/cm(2) on MgO-buffered metal-tape flexible substrates Reviewed

Katase, Takayoshi, Hiramatsu, Hidenori, Matias, Vladimir, Sheehan, Chris, Ishimaru, Yoshihiro, Kamiya, Toshio, Tanabe, Keiichi, Hosono, Hideo

Applied Physics Letters   98 ( 24 )   242510   2011

Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors Reviewed

Ide, Keisuke, Kikuchi, Yutomo, Nomura, Kenji, Kimura, Mutsumi, Kamiya, Toshio, Hosono, Hideo

Applied Physics Letters   99 ( 9 )   093507   2011

Advantageous grain boundaries in iron pnictide superconductors Reviewed

Katase, Takayoshi, Ishimaru, Yoshihiro, Tsukamoto, Akira, Hiramatsu, Hidenori, Kamiya, Toshio, Tanabe, Keiichi, Hosono, Hideo

Nature Communications   2   409   2011

Involvement of oxidative stress and mucosal addressin cell adhesion molecule-1 (MAdCAM-1) in inflammatory bowel disease

Tanida, Satoshi, Mizoshita, Tsutomu, Mizushima, Takashi, Sasaki, Makoto, Shimura, Takaya, Kamiya, Takeshi, Kataoka, Hiromi, Joh, Takashi

Journal of Clinical Biochemistry and Nutrition   48 ( 2 )   2011

Electronic Structure and Photovoltaic Properties of n-Type Amorphous In-Ga-Zn-O and p-Type Single Crystal Si Heterojunctions Reviewed

Kyeongmi Lee, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono

ELECTROCHEMICAL AND SOLID STATE LETTERS   14 ( 8 )   H346 - H349   2011

Origins of Hole Doping and Relevant Optoelectronic Properties of Wide Gap p-Type Semiconductor, LaCuOSe Reviewed

Hiramatsu, Hidenori, Kamiya, Toshio, Tohei, Tetsuya, Ikenaga, Eiji, Mizoguchi, Teruyasu, Ikuhara, Yuichi, Kobayashi, Keisuke, Hosono, Hideo

Journal of the American Chemical Society   132 ( 42 )   15060 - 15067   2010.10

Electrical and magnetic properties of quaternary compounds LnMnPO (Ln = Nd, Sm, Gd) with ZrCuSiAs-type structure Reviewed

Yanagi, Hiroshi, Fukuma, Katsutoshi, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo

Materials Science and Engineering B-Advanced Functional Solid-State Materials   173 ( 1-3 )   47 - 50   2010.10

Electronic structures of MnP-based crystals: LaMnOP, BaMn2P2, and KMnP Reviewed

Kamiya, Toshio, Yanagi, Hiroshi and, Watanabe, Takumi, Hirano, Masahiro, Hosono, Hideo

Materials Science and Engineering B-Advanced Functional Solid-State Materials   173 ( 1-3 )   239 - 243   2010.10

Short-channel nanowire transistor using a nanoporous crystal semiconductor 12CaO center dot 7Al(2)O(3) Reviewed

Nishio, Y., Nomura, K., Yanagi, H., Kamiya, T., Hirano, M., Hosono, H.

Materials Science and Engineering B-Advanced Functional Solid-State Materials   173 ( 1-3 )   37 - 40   2010.10

Nitric oxide mitigates apoptosis in human endothelial cells induced by 9,10-phenanthrenequinone: Role of proteasomal function

Matsunaga, Toshiyuki, Arakaki, Marina, Kamiya, Tetsuro, Haga, Mariko, Endo, Satoshi, El-Kabbani, Ossama, Hara, Akira

Toxicology   268 ( 3 )   2010

Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In-Ga-Zn-O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors

Nomura, Kenji, Aoki, Takashi, Nakamura, Kiyoshi, Kamiya, Toshio, Nakanishi, Takashi, Hasegawa, Takayuki, Kimura, Mutsumi, Kawase, Takeo, Hirano, Masahiro, Hosono, Hideo

Applied Physics Letters   96 ( 26 )   263509   2010

Impurities in FeAs-based superconductor, SrFe2As2, studied by first-principles calculations Reviewed

Kamiya, Toshio, Hiramatsu, Hidenori, Katase, Takayoshi, Hirano, Masahiro, Hosono, Hideo

Materials Science and Engineering B-Advanced Functional Solid-State Materials   173 ( 1-3 )   244 - 247   2010

Intrinsic carrier mobility in amorphous In-Ga-Zn-O thin-film transistors determined by combined field-effect technique

Kimura, Mutsumi, Kamiya, Toshio, Nakanishi, Takashi, Nomura, Kenji, Hosono, Hideo

Applied Physics Letters   96 ( 26 )   262105   2010

Fabrication of nanowires by varying energy microbeam lithography using heavy ions at the TIARA

Kamiya, T., Takano, K., Ishii, Y., Satoh, T., Oikawa, M., Ohkubo, T., Haga, J., Nishikawa, H., Furuta, Y., Uchiya, N., Seki, S., Sugimoto, M.

Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms   267 ( 12-13 )   2009

Comparative study of transient current induced in SiC p(+)n and n(+)p diodes by heavy ion micro beams

Ohshima, Takeshi, Iwamoto, Naoya, Onoda, Shinobu, Kamiya, Tomihiro, Kawano, Katsuyasu

Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms   267 ( 12-13 )   2009

Itinerant ferromagnetism in the layered crystals LaCoOX (X=P,As) Reviewed

Yanagi, Hiroshi, Kawamura, Ryuto, Kamiya, Toshio, Kamihara, Yoichi, Hirano, Masahiro, Nakamura, Tetsuya, Osawa, Hitoshi, Hosono, Hideo

Physical Review B   77 ( 22 )   2008.6

Electromagnetic properties and electronic structure of the iron-based layered superconductor LaFePO Reviewed

Kamihara, Yoichi, Hirano, Masahiro, Yanagi, Hiroshi, Kamiya, Toshio, Saitoh, Yuji, Ikenaga, Eiji, Kobayashi, Keisuke, Hosono, Hideo

Physical Review B   77 ( 21 )   2008.6

Apparent bipolarity and Seebeck sign inversion in a layered semiconductor: LaZnOP Reviewed

Kayanuma, Kentaro, Hiramatsu, Hidenori, Hirano, Masahiro, Kawamura, Ryuto, Yanagi, Hiroshi, Kamiya, Toshio, Hosono, Hideo

Physical Review B   76 ( 19 )   2007.11

Anion incorporation-induced cage deformation in 12CaO center dot 7Al(2)O(3) crystal

Nomura, Takatoshi, Hayashi, Katsuro, Kubota, Yoshiki, Kamiya, Toshio, Hirano, Masahiro, Takata, Masaki, Hosono, Hideo

Chemistry Letters   36 ( 7 )   902 - 903   2007.7

Sn 0.9 In 0.1 P 2 O 7 -based organic/inorganic composite membranes

Heo, P., Nagao, M., Kamiya, T., Sano, M., Tomita, A., Hibino, T.

Journal of the Electrochemical Society   154 ( 1 )   2007

Novel room temperature stable electride 12SrO · 7Al 2O3 thin films: Fabrication, optical and electron transport properties

Miyakawa, M., Ueda, N., Kamiya, T., Hirano, M., Hosono, H.

Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan   115 ( 1345 )   2007

Intermediate-temperature proton conduction in Al 3+ -doped Sn P 2O 7

Tomita, A., Kajiyama, N., Kamiya, T., Nagao, M., Hibino, T.

Journal of the Electrochemical Society   154 ( 12 )   2007

Combinatorial study on In-Ga-Zn-O semiconductor films as active-channel layers for thin-film transistor

T. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, H. Hosono

Materials Research Society Symposium Proceedings   928   80 - 85   2006.12

Opto-electronic properties and light-emitting device application of widegap layered oxychalcogenides: LaCuOCh (Ch = chalcogen) and La2CdO2Se2

Hidenori Hiramatsu, Hayato Kamioka, Kazushige Ueda, Hiromichi Ohta, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   203 ( 11 )   2800 - 2811   2006.9

Iron-based layered superconductor: LaOFeP Reviewed

Kamihara, Yoichi, Hiramatsu, Hidenori, Hirano, Masahiro, Kawamura, Ryuto, Yanagi, Hiroshi, Kamiya, Toshio, Hosono, Hideo

Journal of the American Chemical Society   128 ( 31 )   10012 - 10013   2006.7

Synthesis, structure and physical properties of layered semiconductors MCuFCh (M = Sr, Eu, Ch = S, Se) Reviewed

Motomitsu, E., Yanagi, H., Kamiya, T., Hirano, M., Hosono, H.

Journal of Solid State Chemistry   179 ( 6 )   1668 - 1673   2006.4

Proton conduction in In 3+-doped SnP 2O 7 at intermediate temperatures

Nagao, M., Kamiya, T., Heo, P., Tomita, A., Hibino, T., Sano, M.

Journal of the Electrochemical Society   153 ( 8 )   2006

The role of high-injection effects on the transient ion beam induced current response of high-speed photodetectors

Laird, JS, Hirao, T., Onoda, S., Kamiya, T.

Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms   219   2004

Photoemission spectroscopic studies on oxide/SiC interfaces formed by dry and pyrogenic oxidation

Hijikata, Y., Yaguchi, H., Ishida, Y., Yoshikawa, M., Kamiya, T., Yoshida, S., Madar, R., Camassel, J.

Silicon Carbide and Related Materials 2003, Prts 1 and 2   457-460   2004

N-channel MOSFETs fabricated on homoepitaxy-grown 3C-SiC films

Lee, KK, Ishida, Y., Ohshima, T., Kojima, K., Tanaka, Y., Takahashi, T., Okumura, H., Arai, K., Kamiya, T.

Ieee Electron Device Letters   24 ( 7 )   2003

The electrical characteristics of metal-oxide-semiconductor field effect transistors fabricated on cubic silicon carbide

Ohshima, T., Lee, KK, Ishida, Y., Kojima, K., Tanaka, Y., Takahashi, T., Yoshikawa, M., Okumura, H., Arai, K., Kamiya, T.

Japanese Journal of Applied Physics Part 2-Letters   42 ( 6B )   2003

Thin film fabrication of nano-porous 12CaO center dot 7Al(2)O(3) crystal and its conversion into transparent conductive films by light illumination

Toda, Y., Miyakawa, M., Hayashi, K., Kamiya, T., Hirano, M., Hosono, H.

Thin Solid Films   445 ( 2 )   2003

Observation of single-ion induced charge collection in diode by a heavy ion microbeam system

Kamiya, T., Oikawa, M., Ohshima, T., Hirao, T., Lee, KK, Onoda, S., Laird, JS

Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms   210   2003

透明酸化物の電子構造概論

シーエムシー出版  2006 

透明金属が拓く驚異の世界 不可能に挑むナノテクノロジーの錬金術

ソフトバンク クリエイティブ株式会社  2006 

p型アモルファス酸化物半導体と室温で形成したpn接合ダイオード 「透明酸化物機能材料とその応用」

2006 

自然超格子構造をもつ透明酸化物半導体の単結晶薄膜成長と透明トランジスタへの応用 「材料開発のための顕微鏡法と応用写真集」

日本金属学会  2006 

2.2 電子状態の理解はセラミックスの研究にどう役立つか ～酸化物半導体のバンドラインアップを例として～

社団法人 日本セラミックス協会  2006 

Chap. 4 Ceramics, in Hartree-Fock-Slater Method for Materials Science -The DV-X Alpha Method for Design and Characterization of Materials- (Eds. Hirohiko Adachi, Takeshi Mukoyama, Jun Kawai)

Springer  2005 

単一電子デバイス 実験化学講座 第5版 28巻 ナノテクノロジーの化学

日本化学会編、丸善株式会社  2005 

Chap. 4 Ceramics, in Hartree-Fock-Slater Method for Materials Science -The DV-X Alpha Method for Design and Characterization of Materials- (Eds. Hirohiko Adachi, Takeshi Mukoyama, Jun Kawai)

Springer  2005 

透明ナノポ－ラス結晶：12CaO・7Al_2_O_3_

オプトロニクス 「機能性透明酸化物とオプトエレクトロニクス －ERATO細野透明電子活性プロジェクト成果」  2004 

透明酸化物半導体： 材料設計からデバイス応用まで

セラミックデータブック  2004 

ナノ構造を利用した透明酸化物の高機能化 －ユビキタス元素を使って新機能に迫る－

セラミックスと建築材料 (応用セラミックス研究所 創立70周年記  2004 

透明酸化物半導体とデバイスへの展開

オプトロニクス「機能性透明酸化物とオプトエレクトロニクス －ERATO細野透明電子活性プロジェクト成果」  2004 

透明酸化物のナノ構造を活用した機能開拓

化学工業  2004 

電子状態の理解はセラミックスの研究にどう役立つか ～酸化物半導体のバンドラインナップを例として～

セラミックス  2003 

台湾工業技術研究院に招かれて

東工大クロニクル  2003 

Control of bandgap and network structure in hydrogenated amorphous silicon

Recent Developments in Non-Crystalline Solids (Transworld Research Network, Kerala, India)  2002 

Control of bandgap and network structure in hydrogenated amorphous silicon

Recent Developments in Non-Crystalline Solids (Transworld Research Network, Kerala, India)  2002 

Carrier transport across a few grain boudnaries in polycrystallien silicon

FEMD News Letter  2001 

Room temperature single-electron effects in nanostructured silicon

FEMD News Letter  2001 

Room temperature single-electron effects in nanostructured silicon

FEMD News Letter  2001 

Carrier transport across a few grain boudnaries in polycrystallien silicon

FEMD News Letter  2001 

分光エリプソメトリによる多(微)結晶Si成長のその場観察

学術振興会薄膜第131委員会第189回研究会資料  1997 

強誘電性ペロブスカイト酸化物の材料設計と計算機シミュレーション

セラミックスデータブック1993  1993 

ペロブスカイト強誘電体物性のシミュレーション

セラミックス  1992 

Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer

Tomomasa Shinozaki, Kenji Nomura, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

THIN SOLID FILMS   518 ( 11 )   2996 - 2999   2010.3

Device characteristics improvement of a-In-Ga-Zn-O TFTs by low-temperature annealing

Yutomo Kikuchi, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

THIN SOLID FILMS   518 ( 11 )   3017 - 3021   2010.3

Comprehensive studies on the stabilities of a-In-Ga-Zn-O based thin film transistor by constant current stress

Kenji Nomura, Toshio Kamiya, Yutomo Kikuchi, Masahiro Hirano, Hideo Hosono

THIN SOLID FILMS   518 ( 11 )   3012 - 3016   2010.3

Fabrication of Atomically Flat ScAlMgO4 Epitaxial Buffer Layer and Low-Temperature Growth of High-Mobility ZnO Films

Takayoshi Katase, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

CRYSTAL GROWTH & DESIGN   10 ( 3 )   1084 - 1089   2010.3

Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors

Toshio Kamiya, Kenji Nomura, Hideo Hosono

APPLIED PHYSICS LETTERS   96 ( 12 )   122103   2010.3

Device characteristics improvement of a-In-Ga-Zn-O TFTs by low-temperature annealing

Yutomo Kikuchi, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

THIN SOLID FILMS   518 ( 11 )   3017 - 3021   2010.3

Fabrication and electron transport properties of epitaxial films of electron-doped 12CaO center dot 7Al(2)O(3) and 12SrO center dot 7Al(2)O

Masashi Miyakawa, Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

JOURNAL OF SOLID STATE CHEMISTRY   183 ( 2 )   385 - 391   2010.2

Fabrication and electron transport properties of epitaxial films of electron-doped 12CaO center dot 7Al(2)O(3) and 12SrO center dot 7Al(2)O

Masashi Miyakawa, Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

JOURNAL OF SOLID STATE CHEMISTRY   183 ( 2 )   385 - 391   2010.2

Material characteristics and applications of transparent amorphous oxide semiconductors

Toshio Kamiya, Hideo Hosono

NPG Asia Mater.   2   1522   2010

High Critical Current Density 4 MA/cm(2) in Co-Doped BaFe2As2 Epitaxial Films Grown on (La, Sr)(Al, Ta)O-3 Substrates without Buffer Layers

Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

APPLIED PHYSICS EXPRESS   3 ( 6 )   063101   2010

酸化物半導体新材料の設計とアモルファス酸化物TFT開発の現状

神谷利夫, 細野秀雄

鉱山   63 ( 3 )   20 - 30   2010

Origin of denite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors

Toshio Kamiya, Kenji Nomura, Hideo Hosono

Appl. Phys. Lett.   96 ( 12 )   122103   2010

Material characteristics and applications of transparent amorphous oxide semiconductors

Kamiya, Toshio, Hosono, Hideo

Npg Asia Materials   2 ( 1 )   1522   2010

Atomically-flat, chemically-stable, superconducting epitaxial thin film of iron-based superconductor, cobalt-doped BaFe2As2

Takayoshi Katase, Hidenori Hiramatsu, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

SOLID STATE COMMUNICATIONS   149 ( 47-48 )   2121 - 2124   2009.12

Electronic structures above mobility edges in crystalline and amorphous In-Ga-Zn-O: Percolation conduction examined by analytical model

Toshio Kamiya, Kenji Nomura, Hideo Hosono

IEEE/OSA Journal of Display Technology   5 ( 12 )   462 - 467   2009.12

Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model

Toshio Kamiya, Kenji Nomura, Hideo Hosono

JOURNAL OF DISPLAY TECHNOLOGY   5 ( 12 )   462 - 467   2009.12

Amorphous In-Ga-Zn-O thin-film transistor with coplanar homojunction structure

Ayumu Sato, Mikio Shimada, Katsumi Abe, Ryo Hayashi, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

THIN SOLID FILMS   518 ( 4 )   1309 - 1313   2009.12

Tin monoxide as an s-orbital-based p-type oxide semiconductor: Electronic structures and TFT application

Yoichi Ogo, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Mutsumi Kimura, Masahiro Hirano, Hideo Hosono

Physica Status Solidi (A) Applications and Materials Science   206 ( 9 )   2187 - 2191   2009.9

Effects of post-annealing on (110) Cu(2)O epitaxial films and origin of low mobility in Cu(2)O thin-film transistor

Kosuke Matsuzaki, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   206 ( 9 )   2192 - 2197   2009.9

Tin monoxide as an s-orbital-based p-type oxide semiconductor: Electronic structures and TFT application

Yoichi Ogo, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Mutsumi Kimura, Masahiro Hirano, Hideo Hosono

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   206 ( 9 )   2187 - 2191   2009.9

Water-induced superconductivity in SrFe2As2

Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

PHYSICAL REVIEW B   80 ( 5 )   052501   2009.8

Origins of threshold voltage shifts in room-temperature deposited and annealed a-In-Ga-Zn-O thin-film transistors

Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

APPLIED PHYSICS LETTERS   95 ( 1 )   013502   2009.7

Origins of threshold voltage shifts in room-temperature deposited and annealed a-In-Ga-Zn-O thin-film transistors

Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

APPLIED PHYSICS LETTERS   95 ( 1 )   013502   2009.7

Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x: Tauc-Lorentz optical model and origins of subgap states

Toshio Kamiya, Kenji Nomura, Hideo Hosono

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   206 ( 5 )   860 - 867   2009.5

Electronic structure of the amorphous oxide semiconductor a-lnGaZnO 4-x: Tauc-Lorentz optical model and origins of subgap states

Toshio Kamiya, Kenji Nomura, Hideo Hosono

Physica Status Solidi (A) Applications and Materials Science   206 ( 5 )   860 - 867   2009.5

First-principles study of native point defects in crystalline indium gallium zinc oxide

Hideyuki Omura, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

JOURNAL OF APPLIED PHYSICS   105 ( 9 )   093712   2009.5

Antiferromagnetic bipolar semiconductor LaMnPO with ZrCuSiAs-type structure

Hiroshi Yanagi, Takumi Watanabe, Katsuaki Kodama, Satoshi Iikubo, Shin-ichi Shamoto, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

JOURNAL OF APPLIED PHYSICS   105 ( 9 )   093916   2009.5

Heteroepitaxial film growth of layered compounds with the ZrCuSiAs-type and ThCr2Si2-type structures: From Cu-based semiconductors to Fe-based superconductors

Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   469 ( 9-12 )   657 - 666   2009.5

Bistable resistance switching in surface-oxidized C12A7:e- single-crystal

Yutaka Adachi, Sung-Wng Kim, Toshio Kamiya, Hideo Hosono

Materials Science and Engineering B: Solid-State Materials for Advanced Technology   161 ( 1-3 )   76 - 79   2009.4

Epitaxial film growth and optoelectrical properties of layered semiconductors, LaMnXO (X=P, As, and Sb)

Kentaro Kayanuma, Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

JOURNAL OF APPLIED PHYSICS   105 ( 7 )   073903   2009.4

Bistable resistance switching in surface-oxidized C12A7:e(-) single-crystal

Yutaka Adachi, Sung-Wng Kim, Toshio Kamiya, Hideo Hosono

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS   161 ( 1-3 )   76 - 79   2009.4

Large domain growth of GaN epitaxial films on lattice-matched buffer layer ScAlMgO4

Takayoshi Katase, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS   161 ( 1-3 )   66 - 70   2009.4

Amorphous In-Ga-Zn-O coplanar homojunction thin-film transistor

Ayumu Sato, Katsumi Abe, Ryo Hayashi, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

APPLIED PHYSICS LETTERS   94 ( 13 )   133502   2009.3

Amorphous In-Ga-Zn-O coplanar homojunction thin-film transistor

Ayumu Sato, Katsumi Abe, Ryo Hayashi, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

APPLIED PHYSICS LETTERS   94 ( 13 )   133502   2009.3

Layered mixed-anion compounds: Epitaxial growth, active function exploration, and device application

Hidenori Hiramatsu, Yoichi Kamihara, Hiroshi Yanagi, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY   29 ( 2 )   245 - 253   2009.1

Layered mixed-anion compounds: Epitaxial growth, active function exploration, and device application

Hidenori Hiramatsu, Yoichi Kamihara, Hiroshi Yanagi, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

Journal of the European Ceramic Society   29 ( 2 )   245 - 253   2009.1

Pressure effects on T-c of Iron-based Layered Superconductor LaTMPO (TM = Fe, Ni)

K. Igawa, K. Arii, Y. Takahashi, H. Okada, H. Takahashi, Y. Kamihara, M. Hirano, H. Hiramatsu, T. Watanabe, H. Yanagi, T. Kamiya, H. Hosono, K. Matsubayashi, Y. Uwatoko

25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 5   150   052075-052078   2009

Electromagnetic properties of undoped LaFePnO (Pn = P, As)

Y. Kamihara, T. Watanabe, T. Nomura, S. W. Kim, T. Kamiya, M. Hirano, H. Hosono

25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 5   150   052090   2009

Engineering application of solid state physics: Carrier transport properties and electronic structures of amorphous oxide semiconductors: the present status

Solid state physics   44 ( 9 )   621 - 633   2009

Low Threshold Voltage and Carrier Injection Properties of Inverted Organic Light-Emitting Diodes with [Ca₂₄Al₂₈O₆₄]⁴⁺(4e^-)Cathode and Cu_2-xSe Anode

Hiroshi Yanagi, Ki-Beom Kim, Ikue Koizumi, Maiko Kikuchi, Hidenori Hiramatsu, Masashi Miyakawa, Toshi Kamiya, Masahiro Hirano, Hideo Hosono

J.Phys.Chem.C,   113 ( 42 )   18379 - 18384   2009

Humidity-Sensitive Electrical Conductivity in Ca12Al14-xSixO32Cl2+x (0 &lt;= x &lt;= 3.4) Ceramics

Katsuro Hayashi, Hiroki Muramatsu, Satoru Matsuishi, Toshio Kamiya, Hideo Hosono

ELECTROCHEMICAL AND SOLID STATE LETTERS   12 ( 2 )   J11 - J13   2009

Tin monoxide as an s-orbital-based p-type semiconductor:Electronic structures and TFT application

Yoichi Ogo, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Mutsumi Kimura, Masahiro Hirano, Hideo Hosono

Physics Status Solidi A   1 - 5   2009

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

Toshio Kamiya, Kenji Nomura, Hideo Hosono

J. Displ. Technol.   5   273   2009

Layered mixed-anion compounds: Epitaxial growth, active function exploration, and device application

Hidenori Hiramatsu, Yoichi Kamihara, Hiroshi Yanagi, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

J. Euro. Ceram. Soc.   29 ( 2 )   245 - 253   2009

Low Threshold Voltage and Carrier Injection Properties of Inverted Organic Light-Emitting Diodes with [Ca₂₄Al₂₈O₆₄]⁴⁺(4e^-)Cathode and Cu_2-xSe Anode

Hiroshi Yanagi, Ki-Beom Kim, Ikue Koizumi, Maiko Kikuchi, Hidenori Hiramatsu, Masashi Miyakawa, Toshi Kamiya, Masahiro Hirano, Hideo Hosono

J.Phys.Chem.C,   113 ( 42 )   18379 - 18384   2009

Two-Dimensional Spin Dynamics in the Itinerant Ferromagnet LaCoPO Revealed by Magnetization and ³¹P-NMR Measurements

Hitoshi Sugawara, Kenji Ishida, Yusuke Nakai, Hiroshi Yanagi, Toshio Kamiya, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono

Journal of the Physical Society of Japan   78   113705 - 113708   2009

Tin monoxide as an s-orbital-based p-type semiconductor:Electronic structures and TFT application

Yoichi Ogo, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Mutsumi Kimura, Masahiro Hirano, Hideo Hosono

Physics Status Solidi A   1 - 5   2009

Humidity-sensitive electrical conductivity in Ca12 Al14-x Six O32 Cl2+x (0≤x≤3.4) ceramics

Katsuro Hayashi, Hiroki Muramatsu, Satoru Matsuishi, Toshio Kamiya, Hideo Hosono

Electrochemical and Solid-State Letters   12 ( 2 )   J11 - J13   2009

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

Toshio Kamiya, Kenji Nomura, Hideo Hosono

J. Displ. Technol.   5   273   2009

Two-Dimensional Spin Dynamics in the Itinerant Ferromagnet LaCoPO Revealed by Magnetization and ³¹P-NMR Measurements

Hitoshi Sugawara, Kenji Ishida, Yusuke Nakai, Hiroshi Yanagi, Toshio Kamiya, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono

Journal of the Physical Society of Japan   78   113705 - 113708   2009

Antiferromagnetic bipolar semiconductor LaMnPO with ZrCuSiAs-type structure

Hiroshi Yanagi, Takumi Watanabe, Katsuaki Kodama, Satoshi Iikubo, Shin-ichi Shamoto, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

J. Appl. Phys   105 ( 9 )   093916   2009

Large domain growth of GaN epitaxial films on lattice-matched buffer layer ScAlMgO₄

Takayoshi Katase, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

Mater. Sci. & Eng. B   161   66 - 70   2009

Characterization of copper selenide thin film hole-injection layers deposited at room temperature for use with p-type organic semiconductors

Hidenori Hiramatsu, Ikue Koizumi, Ki-Beom Kim, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Noriaki Matsunami, Hideo Hosono

JOURNAL OF APPLIED PHYSICS   104 ( 11 )   113723   2008.12

Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O(2) annealing

Kenji Nomura, Toshio Kamiya, Hiromichi Ohta, Masahiro Hirano, Hideo Hosono

APPLIED PHYSICS LETTERS   93 ( 19 )   192107   2008.11

Epitaxial growth of high mobility Cu(2)O thin films and application to p-channel thin film transistor

Kosuke Matsuzaki, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

APPLIED PHYSICS LETTERS   93 ( 20 )   202107   2008.11

ZnO-Based Semiconductors as Building Blocks for Active Devices

Toshio Kamiya, Masashi Kawasaki

MRS BULLETIN   33 ( 11 )   1061 - 1066   2008.11

Electronic and magnetic properties of layered LnFePO (Ln = La and Ce)

Yoichi Kamihara, Hidenori Hiramatsu, Masahiro Hirano, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS   69 ( 11 )   2916 - 2918   2008.11

Solid State Syntheses of 12SrO center dot 7Al(2)O(3) and Formation of High Density Oxygen Radical Anions, O- and O-2(-)

Katsuro Hayashi, Naoto Ueda, Satoru Matsuishi, Masahiro Hirano, Toshio Kamiya, Hideo Hosono

CHEMISTRY OF MATERIALS   20 ( 19 )   5987 - 5996   2008.10

Superconductivity in Epitaxial Thin Films of Co-Doped SrFe2As2 with Bilayered FeAs Structures and their Magnetic Anisotropy

Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

APPLIED PHYSICS EXPRESS   1 ( 10 )   101702   2008.10

Low and small resistance hole-injection barrier for NPB realized by wide-gap p-type degenerate semiconductor, LaCuOSe : Mg

Hiroshi Yanagi, Maiko Kikuchi, Ki-Beom Kim, Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

ORGANIC ELECTRONICS   9 ( 5 )   890 - 894   2008.10

Heteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO

Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

APPLIED PHYSICS LETTERS   93 ( 16 )   162504   2008.10

Solid State Syntheses of 12SrO center dot 7Al(2)O(3) and Formation of High Density Oxygen Radical Anions, O- and O-2(-)

Katsuro Hayashi, Naoto Ueda, Satoru Matsuishi, Masahiro Hirano, Toshio Kamiya, Hideo Hosono

CHEMISTRY OF MATERIALS   20 ( 19 )   5987 - 5996   2008.10

Fabrication and transport properties of 12CaO center dot 7Al(2)O(3) (C12A7) electride nanowire

Y. Nishio, K. Nomura, M. Miyakawa, K. Hayashi, H. Yanagi, T. Kamiya, M. Hirano, H. Hosono

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   205 ( 8 )   2047 - 2051   2008.8

Nickel-based layered superconductor, LaNiOAs

Takumi Watanabe, Hiroshi Yanagi, Yoichi Kamihara, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

JOURNAL OF SOLID STATE CHEMISTRY   181 ( 8 )   2117 - 2120   2008.8

Amorphous Sn-Ga-Zn-O channel thin-film transistors

Youichi Ogo, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   205 ( 8 )   1920 - 1924   2008.8

Electrical and optical properties of copper-based chalcogenide thin films deposited by pulsed laser deposition at room temperature: Toward p-channel thin film transistor fabricable at room temperature

Hidenori Hiramatsu, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Noriaki Matsunami, Ken-ichi Shimizu, Hideo Hosono

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   205 ( 8 )   2007 - 2012   2008.8

Fabrication and transport properties of 12CaO center dot 7Al(2)O(3) (C12A7) electride nanowire

Y. Nishio, K. Nomura, M. Miyakawa, K. Hayashi, H. Yanagi, T. Kamiya, M. Hirano, H. Hosono

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   205 ( 8 )   2047 - 2051   2008.8

Zn-ln-O based thin-film transistors: Compositional dependence

N. Itagaki, T. Iwasaki, H. Kumomi, T. Den, K. Nomura, T. Kamiya, H. Hosono

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   205 ( 8 )   1915 - 1919   2008.8

Interface electronic structures of zinc oxide and metals: First-principle study

T. Kamiya, K. Tajima, K. Nomura, Hiroshi Yanagi, H. Hosono

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   205 ( 8 )   1929 - 1933   2008.8

Relationship between non-localized tail states and carrier transport in amorphous oxide semiconductor, In-Ga-Zn-O

K. Nomura, T. Kamiya, H. Ohta, K. Shimizu, M. Hirano, H. Hosono

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   205 ( 8 )   1910 - 1914   2008.8

Heteroepitaxial growth of layered semiconductors, LaZnOPn (Pn = P and As)

Kentaro Kayanuma, Ryuto Kawamura, Hidenori Hiramatsu, Hiroshi Yanagi, Masahiro Hirano, Toshio Kamiya, Hideo Hosono

THIN SOLID FILMS   516 ( 17 )   5800 - 5804   2008.7

p-channel thin-film transistor using p-type oxide semiconductor, SnO

Yoichi Ogo, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

APPLIED PHYSICS LETTERS   93 ( 3 )   032113   2008.7

Nickel-based phosphide superconductor with infinite-layer structure, BaNi2P2

Takashi Mine, Hiroshi Yanagi, Toshio Kamiya, Yoichi Karnihara, Masahiro Hirano, Hideo Hosono

SOLID STATE COMMUNICATIONS   147 ( 3-4 )   111 - 113   2008.7

Fabrication of ScAlMgO4 epitaxial thin films using ScGaO3(ZnO)(m) buffer layers and its application to lattice-matched buffer layer for ZnO epitaxial growth

Takayoshi Katase, Kenji Noinura, Hirornichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

THIN SOLID FILMS   516 ( 17 )   5842 - 5846   2008.7

Control of carrier concentration and surface flattening of CuGaO2 epitaxial films for a p-channel transparent transistor

Takashi Mine, Hiroshi Yanagi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

THIN SOLID FILMS   516 ( 17 )   5790 - 5794   2008.7

Specific contact resistances between amorphous oxide semiconductor In-Ga-Zn-O and metallic electrodes

Yasuhiro Shimura, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

THIN SOLID FILMS   516 ( 17 )   5899 - 5902   2008.7

Specific contact resistances between amorphous oxide semiconductor In-Ga-Zn-O and metallic electrodes

Yasuhiro Shimura, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

THIN SOLID FILMS   516 ( 17 )   5899 - 5902   2008.7

Itinerant ferromagnetism in the layered crystals LaCoOX (X=P,As)

Hiroshi Yanagi, Ryuto Kawamura, Toshio Kamiya, Yoichi Kamihara, Masahiro Hirano, Tetsuya Nakamura, Hitoshi Osawa, Hideo Hosono

PHYSICAL REVIEW B   77 ( 22 )   224431   2008.6

Electromagnetic properties and electronic structure of the iron-based layered superconductor LaFePO

Yoichi Kamihara, Masahiro Hirano, Hiroshi Yanagi, Toshio Kamiya, Yuji Saitoh, Eiji Ikenaga, Keisuke Kobayashi, Hideo Hosono

PHYSICAL REVIEW B   77 ( 21 )   214515   2008.6

Subgap states in transparent amorphous oxide semiconductor, In-Ga-Zn-O, observed by bulk sensitive x-ray photoelectron spectroscopy

Kenji Nomura, Toshio Kamiya, Hiroshi Yanagi, Eiji Ikenaga, Ke Yang, Keisuke Kobayashi, Masahiro Hirano, Hideo Hosono

APPLIED PHYSICS LETTERS   92 ( 20 )   202117   2008.5

Subgap states in transparent amorphous oxide semiconductor, In-Ga-Zn-O, observed by bulk sensitive x-ray photoelectron spectroscopy

Kenji Nomura, Toshio Kamiya, Hiroshi Yanagi, Eiji Ikenaga, Ke Yang, Keisuke Kobayashi, Masahiro Hirano, Hideo Hosono

APPLIED PHYSICS LETTERS   92 ( 20 )   202117   2008.5

Modeling of amorphous InGaZnO(4) thin film transistors and their subgap density of states

Hsing-Hung Hsieh, Toshio Kamiya, Kenji Nomura, Hideo Hosono, Chung-Chih Wu

APPLIED PHYSICS LETTERS   92 ( 13 )   133503   2008.3

Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application

Madambi K. Jayaraj, Kachirayil J. Saji, Kenji Nomura, Toshio Kamiya, Hideo Hosono

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   26 ( 2 )   495 - 501   2008.3

Localized and delocalized electrons in room-temperature stable electride [Ca24Al28O64](4+)(O2-)(2-x)(e(-))(2x): Analysis of optical reflectance spectra

Satoru Matsuishi, Sung Wng Kim, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

JOURNAL OF PHYSICAL CHEMISTRY C   112 ( 12 )   4753 - 4760   2008.3

Trap densities in amorphous-InGaZnO(4) thin-film transistors

Mutsumi Kimura, Takashi Nakanishi, Kenji Nomura, Toshio Kamiya, Hideo Hosono

APPLIED PHYSICS LETTERS   92 ( 13 )   133512   2008.3

Amorphous oxide channel TFTs

Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo Hosono

THIN SOLID FILMS   516 ( 7 )   1516 - 1522   2008.2

Crystal structures, optoelectronic properties, and electronic structures of layered oxychalcogenides MCuOCh (M = Bi, La; Ch = S, Se, Te): Effects of electronic configurations of M3+ ions

Hidenori Hiramatsu, Hiroshi Yanagi, Toshio Kamiya, Kazushige Ueda, Masahiro Hirano, Hideo Hosono

CHEMISTRY OF MATERIALS   20 ( 1 )   326 - 334   2008.1

Factors controlling electron transport properties in transparent amorphous oxide semiconductors

Hosono, Hideo, Nomura, Kenji, Ogo, Youichi, Uruga, Tomoya, Kamiya, Toshio

Journal of Non-Crystalline Solids   354 ( 19-25 )   2796 - 2800   2008

ZnO-Based Semiconductors as Building Blocks for Active Devices

Kamiya, Toshio, Kawasaki, Masashi

Mrs Bulletin   33 ( 11 )   1061 - 1066   2008

Electronic structure of oxygen deficient amorphous oxide semiconductor a-InGaZnO4-x: Optical analyses and first-principle calculations

Toshio Kamiya, Kenji Nomura, Masahiro Hirano, Hideo Hosono

Physica Status Solidi (C) Current Topics in Solid State Physics   5 ( 9 )   3098 - 3100   2008

Localized and Delocalized Electrons in Room-Temperature Stable Electride [Ca24Al28O64]4+(O2-)2-x(e-)2x: Analysis of Optical Reflectance Spectra

Satoru Matsuishi, Sung Wng Kim, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

Journal of Physical Chemistry C   112 ( 12 )   4753 - 4760   2008

Thin film and bulk fabrication of room-temperature-stable electride C12A7 : e(-) utilizing reduced amorphous 12CaO center dot 7Al(2)O(3)(C12A7)

Hosono, Hideo, Kim, Sung Wang, Miyakawa, Masashi, Matsuishi, Satoru, Kamiya, Toshio

Journal of Non-Crystalline Solids   354 ( 19-25 )   2772 - 2776   2008

Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

Kenji Nomura, Toshio Kamiya, Hiromichi Ohta, Masahiro Hirano, Hideo Hosono

Appl. Phys. Lett.   93 ( 19 )   192107   2008

Pressure effects on superconducting and structural properties for nickel-based superconductors LaNiXO (X = P and As)

Hironari OKADA, Yuki TAKAHASHI, Kazumi IGAWA, Kazunobu ARII, Hiroki TAKAHASHI, Takumi WATANABE, Hiroshi YANAGI, Yoichi KAMIHARA, Toshio KAMIYA, Masahiro HIRANO, Hideo HOSONO, Satoshi NAKANO, Takumi KIKEGAWA

J. Phys. Soc. Jpn. Suppl. C   77   119 - 120   2008

Electromagnetic properties and electronic structure of the iron-based layered superconductor LaFePO

Yoichi Kamihara, Masahiro Hirano, Hiroshi Yanagi, Toshio Kamiya, Yuji Saitoh, Eiji Ikenaga, Keisuke Kobayashi, Hideo Hosono

Phys. Rev. B   77 ( 21 )   214515   2008

Itinerant ferromagnetism in the layered crystals LaCoOX (X = P,As)

Hiroshi Yanagi, Ryuto Kawamura, Toshio Kamiya, Yoichi Kamihara, Masahiro Hirano, Tetsuya Nakamura, Hitoshi Osawa, Hideo Hosono

Physical Review B   77 ( 22 )   224431   2008

Optical and carrier transport properties of cosputtered Zn-In-Sn-O films and their applications to TFTs

Saji, Kachirayil J., Jayaraj, Madambi K., Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo

Journal of the Electrochemical Society   155 ( 6 )   H390 - H395   2008

Heavy hole doping and light-emitting device application of wide gap p-type semiconductor, LaCuOSe

Function & materials   28 ( 3月号 )   34 - 41   2008

酸化物が電気を流す！

神谷利夫

化学と教育   56 ( 12 )   598 - 601   2008

Interface electronic structures of zin oxide and metals: First-principle study

T. Kamiya, K. Tajima, K. Nomura, Hiroshi Yanagi, H. Hosono

phys. stat. solidi (a)   205   1929   2008

バンド構造を用いた材料開発（実践編）

神谷利夫

第14回結晶工学スクールテキスト   2008

Thin film and bulk fabrication of room-tenperature-stable electride C12A7:e^- utilizing reduced amorphous 12CaO・7Al₂O₃(C12A7)

Hideo Hosono, SungWng Kim, Masashi Miyakawa, Satoru Matsuishi, Toshio Kamiya

J. Non-Cryst. Sol.   354 ( 19-25 )   2772 - 2776   2008

Electronic structure of oxygen deficient amorphous oxide semiconductor a-InGaZnO4-x: Optical analyses and first-principle calculations

Toshio Kamiya, Kenji Nomura, Masahiro Hirano, Hideo Hosono

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9   5 ( 9 )   3098 - +   2008

酸化物半導体の薄膜トランジスタへの応用

野村研二, 神谷利夫, 太田裕道, 平野正浩, 細野秀雄

機能材料   28 ( 3月号 )   42 - 53   2008

Pressure effects on superconducting and structural properties for nickel-based superconductors LaNiXO (X = P and As)

Hironari OKADA, Yuki TAKAHASHI, Kazumi IGAWA, Kazunobu ARII, Hiroki TAKAHASHI, Takumi WATANABE, Hiroshi YANAGI, Yoichi KAMIHARA, Toshio KAMIYA, Masahiro HIRANO, Hideo HOSONO, Satoshi NAKANO, Takumi KIKEGAWA

J. Phys. Soc. Jpn. Suppl. C   77   119 - 120   2008

Insulator-metal Transition of an Alumina Cement Constituent, C12A7, Realized by Employing a Built-in Nanostructure : Fabrication of Highly Transparent Conductive Thin Films and Their Application to an Electron Injection Electrode in Organic Devices Utilizing the Low Work Function

MIYAKAWA Masashi, KIM Ki-Beom, KAMIYA Toshio, HIRANO Masahiro, HOSONO Hideo

Journal of the Surface Science Society of Japan   29 ( 1 )   2 - 9   2008

Nickel-based oxyphosphide superconductor with a layered crystal structure, LaNiOP

Takumi Watanabe, Hiroshi Yanagi, Toshio Kamiya, Yoichi Kamihara, Hidenori Hiramatsu, Masahiro Hirano, Hideo Hosono

INORGANIC CHEMISTRY   46 ( 19 )   7719 - 7721   2007.9

Heavy hole doping of epitaxial thin films of a wide gap p-type semiconductor, LaCuOSe, and analysis of the effective mass

Hidenori Hiramatsu, Kazushige Ueda, Hiromichi Ohta, Masahiro Hirano, Maiko Kikuchi, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono

APPLIED PHYSICS LETTERS   91 ( 1 )   012104   2007.7

Photoelectron spectroscopic study of C12A7 : e(-) and Alq(3) interface: The formation of a low electron-injection barrier

Ki-Beom Kim, Maiko Kikuchi, Masashi Miyakawa, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

JOURNAL OF PHYSICAL CHEMISTRY C   111 ( 24 )   8403 - 8406   2007.6

Metallic state in a lime-alumina compound with nanoporous structure

Sung Wng Kim, Satoru Matsuishi, Takatoshi Nomura, Yoshiki Kubota, Masaki Takata, Katsuro Hayashi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

Nano Letters   7 ( 5 )   1138 - 1143   2007.5

Epitaxial film growth, optical, electrical, and magnetic properties of layered oxide In3FeTi2O10

Youichi Ogo, Hiroshi Yanagi, Toshio Kamiya, Kenji Nomura, Masahiro Hirano, Hideo Hosono

JOURNAL OF APPLIED PHYSICS   101 ( 10 )   103714   2007.5