Informatics / Computational science

Natural Science / Semiconductors, optical properties of condensed matter and atomic physics

Tokyo Institute of Technology   Materials and Structures Laboratory   Associate Professor

2003.12 - 2010.7

-:東京工業大学 助教授

2003

-:

2003

:東京工業大学 講師

2002 - 2003

:

2002 - 2003

:東京工業大学 助手

1991 - 2002

:

1991 - 2002

Ordered single active sites for cascade hydrogenation and hydroformylation reactions

Xiaojun Lu, Jiazhen Wu, Xinyi He, Zichuang Li, Yangfan Lu, Wenqian Li, Jiang Li, Miao Xu, Yanpeng Qi, Qing Zhang, Yijia Liu, Meng Du, Toshio Kamiya, Hideo Hosono, Fusheng Pan, Jie-Sheng Chen, Tian-Nan Ye

NATURE CATALYSIS   8 ( 6 )   536 - 547   2025.6

Nanoscale Origin of Strong Charge Carrier Scattering at Grain Boundaries in Orthorhombic SnSe Semiconductor Thin Films

Xinyi He, Kenji Matsuo, Takayoshi Katase, Kota Hanzawa, Hideto Yoshida, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

ACS APPLIED NANO MATERIALS   8 ( 16 )   8167 - 8175   2025.4

Phase Diagram and Growth Mechanism of Rutile-Type GeO₂ Epitaxial Film on c-Plane Sapphire Substrate

Tomoya Suzuki, Kaname Sakaban, Takayoshi Katase, Hideto Yoshida, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

ACS APPLIED NANO MATERIALS   8 ( 15 )   7796 - 7805   2025.4

Room-Temperature Possible Current-Induced Transition in Ca₂RuO₄ Thin Films Grown Through Intercalation-Like Cation Diffusion in the A₂BO₄ Ruddlesden-Popper Structure

Atsushi Fukuchi, Takayoshi Katase, Toshio Kamiya

SMALL METHODS   8 ( 12 )   2024.12

Nonequilibrium Layered PbS Stabilized by Sn Doping: Bipolar Semiconductors with Low Thermal Conductivity

Mari Hiramatsu, Zhongxu Hu, Sakura Yoshikawa, Zan Yang, Xinyi He, Takayoshi Katase, Jun-ichi Yamaura, Hajime Sagayama, Terumasa Tadano, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

ACS APPLIED ELECTRONIC MATERIALS   6 ( 11 )   8339 - 8350   2024.11

Discovery of Self-Assembled 2D Ru/Si Superlattices Boosting Hydrogen Evolution

Weizheng Cai, Xinyi He, Tian-Nan Ye, Xinmeng Hu, Chuanlong Liu, Masato Sasase, Masaaki Kitano, Toshio Kamiya, Hideo Hosono, Jiazhen Wu

SMALL   20 ( 42 )   2024.10

Simultaneous Realization of Single-Crystal-Like Electron Transport and Strong Phonon Scattering in Polycrystalline SrTiO_3-x H _x

Takayoshi Katase, Seiya Nomoto, Xinyi He, Suguru Kitani, Takashi Honda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

ACS APPLIED ELECTRONIC MATERIALS   6 ( 10 )   7424 - 7429   2024.9

Symmetry change in LaNiO₃ films caused by epitaxial strain from LaAlO₃, SrTiO₃, and DyScO₃ pseudocubic (001) surfaces

Fumiya Izumisawa, Yuta Ishii, Masatoshi Kimura, Takayoshi Katase, Toshio Kamiya, Jun-ichi Yamaura, Yusuke Wakabayashi

JOURNAL OF APPLIED PHYSICS   136 ( 7 )   2024.8

Thickness-dependent intergrowth of Ruddlesden - Popper impurity structures in solid-phase epitaxial growth of Ca₂ RuO₄ thin films

Atsushi Tsurumaki-Fukuchi, Takayoshi Katase, Toshio Kamiya

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   132 ( 7 )   312 - 317   2024.7

Wide-Gap p-Type Layered Oxychalcogenides AE₂CuInO₃Ch (AE: Alkaline Earth; Ch: Chalcogen): Unusually Low Residual Carrier Concentration and Green-to-Red Emission Reviewed

Xinyi He, Tatsuya Cho, Takayoshi Katase, Kota Hanzawa, Suguru Kitani, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

CHEMISTRY OF MATERIALS   36 ( 12 )   6086 - 6099   2024.6

Phonon drag thermopower persisting over 200 K in FeSb₂ thin film on SrTiO₃ single crystal

Chihiro Yamamoto, Xinyi He, Kota Hanzawa, Takayoshi Katase, Masato Sasase, Jun-ichi Yamaura, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

APPLIED PHYSICS LETTERS   124 ( 19 )   2024.5

Hydrogen-included plasma-assisted reactive sputtering for conductivity control of ultra-wide bandgap amorphous gallium oxide Reviewed

Kosuke Takenaka, Hibiki Komatsu, Taichi Sagano, Keisuke Ide, Susumu Toko, Takayoshi Katase, Toshio Kamiya, Yuichi Setsuhara

JAPANESE JOURNAL OF APPLIED PHYSICS   63 ( 4 )   04SP65/1 - 04SP65/5   2024.4

Inverse-Perovskite Ba₃BO (B = Si and Ge) as a High Performance Environmentally Benign Thermoelectric Material with Low Lattice Thermal Conductivity Reviewed

Xinyi He, Shigeru Kimura, Takayoshi Katase, Terumasa Tadano, Satoru Matsuishi, Makoto Minohara, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya

ADVANCED SCIENCE   11 ( 10 )   - 2307058   2024.3

Significant effects of epitaxial strain on the nonlinear transport properties in Ca2RuO4 thin films with the current-driven transition Reviewed

Keiji Tsubaki, Masashi Arita, Takayoshi Katase, Toshio Kamiya, Atsushi Tsurumaki-Fukuchi, Yasuo Takahashi

Japanese Journal of Applied Physics   2023.8

Dynamics of an Electrically Driven Phase Transition in Ca₂RuO₄ Thin Films: Nonequilibrium High‐Speed Resistive Switching in the Absence of an Abrupt Thermal Transition

Keiji Tsubaki, Atsushi Tsurumaki‐Fukuchi, Takayoshi Katase, Toshio Kamiya, Masashi Arita, Yasuo Takahashi

Advanced Electronic Materials   2023.4

Hydride Anion Substitution Boosts Thermoelectric Performance of Polycrystalline SrTiO 3 via Simultaneous Realization of Reduced Thermal Conductivity and High Electronic Conductivity Reviewed

Xinyi He, Seiya Nomoto, Takehito Komatsu, Takayoshi Katase, Terumasa Tadano, Suguru Kitani, Hideto Yoshida, Takafumi Yamamoto, Hiroshi Mizoguchi, Keisuke Ide, Hidenori Hiramatsu, Hitoshi Kawaji, Hideo Hosono, Toshio Kamiya

Advanced Functional Materials   2023.4

Local electronic structure of dilute hydrogen in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>β</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mi>Ga</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> probed by muons

M. Hiraishi, H. Okabe, A. Koda, Ryosuke Kadono, Takeo Ohsawa, Naoki Ohashi, Keisuke Ide, T. Kamiya, H. Hosono

Physical Review B   107 ( 4 )   2023.1

Quantum confinement effects in amorphous In–Ga–Zn–O thin-film transistors with quantum well channel

Katsumi Abe, Toshio Kamiya, Hideo Hosono

Applied Physics Letters   2022.11

Low-temperature-processable amorphous-oxide-semiconductor-based phosphors for durable light-emitting diodes Reviewed

Keisuke Ide, Naoto Watanabe, Takayoshi Katase, Masato Sasase, Junghwan Kim, Shigenori Ueda, Koji Horiba, Hiroshi Kumigashira, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

Applied Physics Letters   2022.11

Design, Synthesis, and Optoelectronic Properties of the High-Purity Phase in Layered AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf) Semiconductors

Akihiro Shiraishi, Shigeru Kimura, Xinyi He, Naoto Watanabe, Takayoshi Katase, Keisuke Ide, Makoto Minohara, Kosuke Matsuzaki, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya

Inorganic Chemistry   2022.5

Degenerated Hole Doping and Ultra-Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution Reviewed

Xinyi He, Haoyun Zhang, Takumi Nose, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

ADVANCED SCIENCE   9 ( 13 )   2022.5

High-Mobility Metastable Rock-Salt Type (Sn,Ca)Se Thin Film Stabilized by Direct Epitaxial Growth on a YSZ (111) Single-Crystal Substrate

Xinyi He, Jinshuai Chen, Takayoshi Katase, Makoto Minohara, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya

ACS Applied Materials &amp; Interfaces   2022.4

Photoinduced transient states of antiferromagnetic orderings in La1/3Sr2/3FeO3 and SrFeO3-delta thin films observed through time-resolved resonant soft x-ray scattering

Kohei Yamamoto, Tomoyuki Tsuyama, Suguru Ito, Kou Takubo, Iwao Matsuda, Niko Pontius, Christian Schuessler-Langeheine, Makoto Minohara, Hiroshi Kumigashira, Yuichi Yamasaki, Hironori Nakao, Youichi Murakami, Takayoshi Katase, Toshio Kamiya, Hiroki Wadati

NEW JOURNAL OF PHYSICS   24 ( 4 )   2022.4

Effect of intentional chemical doping on crystallographic and electric properties of the pyrochlore Bi2Sn2O7 Reviewed

Makoto Minohara, Naoto Kikuchi, Kouhei Tsukuda, Yuka Dobashi, Akane Samizo, Keishi Nishio, Xinyi He, Takayoshi Katase, Toshio Kamiya, Yoshihiro Aiura

MATERIALS & DESIGN   216   2022.4

Electronic and Lattice Thermal Conductivity Switching by 3D-2D Crystal Structure Transition in Nonequilibrium (Pb1-xSnx)Se Reviewed

Yusaku Nishimura, Xinyi He, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Suguru Kitani, Kota Hanzawa, Shigenori Ueda, Hidenori Hiramatsu, Hitoshi Kawaji, Hideo Hosono, Toshio Kamiya

ADVANCED ELECTRONIC MATERIALS   2022.3

Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn₃N₂Films on a Glass Substrate Reviewed

Li, K., Shimizu, A., He, X., Ide, K., Hanzawa, K., Matsuzaki, K., Katase, T., Hiramatsu, H., Hosono, H., Zhang, Q., Kamiya, T.

ACS Applied Electronic Materials   4 ( 4 )   2022

Tuning of Hole Carrier Density in p-type α-SnWO4 by Exploiting Oxygen Defects

Makoto Minohara, Makoto Minohara, Yuka Dobashi, Naoto Kikuchi, Akane Samizo, Takashi Honda, Xinyi He, Takayoshi Katase, Toshio Kamiya, Keishi Nishio, Yoshihiro Aiura

Materials Advances   2022

Breaking of Thermopower-Conductivity Trade-Off in LaTiO3 Film around Mott Insulator to Metal Transition

Takayoshi Katase, Xinyi He, Terumasa Tadano, Jan M. Tomczak, Takaki Onozato, Keisuke Ide, Bin Feng, Tetsuya Tohei, Hidenori Hiramatsu, Hiromichi Ohta, Yuichi Ikuhara, Hideo Hosono, Toshio Kamiya

ADVANCED SCIENCE   8 ( 23 )   2021.12

Large phonon drag thermopower boosted by massive electrons and phonon leaking in LaAlO3/LaNiO3/LaAlO3 heterostructure

Masatoshi Kimura, Xinyi He, Takayoshi Katase, Terumasa Tadano, Jan M. Tomczak, Makoto Minohara, Ryotaro Aso, Hideto Yoshida, Keisuke Ide, Shigenori Ueda, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya

NANO LETTERS   21 ( 21 )   9240 - 9246   2021.11

Ion Substitution Effect on Defect Formation in Two-Dimensional Transition Metal Nitride Semiconductors, AETiN(2) (AE = Ca, Sr, and Ba)

Xinyi He, Takayoshi Katase, Keisuke Ide, Hideo Hosono, Toshio Kamiya

INORGANIC CHEMISTRY   60 ( 14 )   10227 - 10234   2021.7

Local Structure Properties of Hydrogenated and Nonhydrogenated Amorphous In–Ga–Zn–O Thin Films Using XAFS and High-Energy XRD

Loku Singgappulige Rosantha Kumara, Kyohei Ishikawa, Keisuke Ide, Hideo Hosono, Toshio Kamiya, Osami Sakata

The Journal of Physical Chemistry C   125 ( 24 )   13619 - 13628   2021.6

Publisher's Note: “Hard x-ray photoemission study on strain effect in LaNiO3 thin films” [Appl. Phys Lett. 118, 161601 (2021)]

Yasushi Hotta, Akira Yasui, Takayoshi Katase, Yasumasa Takagi, Kohei Yamagami, Keisuke Ikeda, A. Hariki, Toshio Kamiya, Yujun Zhang, Hiroki Wadati

Applied Physics Letters   118   2021.6

Hard x-ray photoemission study on strain effect in LaNiO3 thin films Reviewed

Kohei Yamagami, Keisuke Ikeda, Atushi Hariki, Yujun Zhang, Akira Yasui, Yasumasa Takagi, Takayoshi Katase, Toshio Kamiya, Hiroki Wadati

Appl. Phys. Lett.   118 ( 16 )   161601 - 161601   2021.4

Reversible 3D-2D structural phase transition and giant electronic modulation in nonequilibrium alloy semiconductor, lead-tin-selenide

Takayoshi Katase, Yudai Takahashi, Xinyi He, Terumasa Tadano, Keisuke Ide, Hideto Yoshida, Shiro Kawachi, Jun-ichi Yamaura, Masato Sasase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

Science Advances   7 ( 12 )   eabf2725 - eabf2725   2021.3

Double Charge Polarity Switching in Sb-Doped SnSe with Switchable Substitution Sites

Chihiro Yamamoto, Xinyi He, Takayoshi Katase, Keisuke Ide, Yosuke Goto, Yoshikazu Mizuguchi, Akane Samizo, Makoto Minohara, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

ADVANCED FUNCTIONAL MATERIALS   31 ( 8 )   2021.2

Understanding and controlling electronic defects in amorphous oxide semiconductor

Keisuke Ide, Hideo Hosono, Toshio Kamiya

Digest of Technical Papers - SID International Symposium   52 ( 1 )   97 - 99   2021

Shallow Valence Band of Rutile GeO2 and P-type Doping

Christian A. Niedermeier, Keisuke Ide, Takayoshi Katase, Hideo Hosono, Toshio Kamiya

JOURNAL OF PHYSICAL CHEMISTRY C   124 ( 47 )   25721 - 25728   2020.11

Stable and Tunable Current-Induced Phase Transition in Epitaxial Thin Films of Ca2RuO4 Reviewed

Atsushi Tsurumaki-Fukuchi, Keiji Tsubaki, Takayoshi Katase, Toshio Kamiya, Masashi Arita, Yasuo Takahashi

ACS Applied Materials & Interfaces   2020.5

Thermoelectric (BaxSr1-x)Si-2 films prepared by sputtering method over the barium solubility limit

Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo

JAPANESE JOURNAL OF APPLIED PHYSICS   59   2020.4

Phonon scattering limited mobility in the representative cubic perovskite semiconductors SrGeO3 , BaSnO3 , and SrTiO3 Reviewed

Christian A. Niedermeier, Yu Kumagai, Keisuke Ide, Takayoshi Katase, Fumiyasu Oba, Hideo Hosono, Toshio Kamiya

Physical Review B   101 ( 12 )   2020.3

Large power-factor enhancement by breaking thermoelectric trade-off relation in transition metal oxide, LaNiO₃

Higuchi Yuhi, Katase Takayoshi, Terumasa Tadano, Jun Fujioka, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

JSAP Annual Meetings Extended Abstracts   2020.1   3583 - 3583   2020.2

Fabrication and characterization of (CaxSr1-x)Si2 films prepared by co-sputtering method Reviewed

K. Aoyama, T. Shimizu, H. Kuramochi, M. Mesuda, R. Akiike, K. Ide, T. Katase, T. Kamiya, Y. Kimura, H. Funakubo

MRS Advances   5 ( 10 )   451 - 458   2020.1

Electronic defects in amorphous oxide semiconductor and recent development

Keisuke Ide, Hideo Hosono, Toshio Kamiya

2020 TWENTY-SEVENTH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 20): TFT TECHNOLOGIES AND FPD MATERIALS   2020

Preparations of AeSi₂ films by a co-sputtering process

Aoyama Kodai, Shimizu Takao, Kuramochi Hideto, Mesuda Masami, Akiike Ryo, Ide Keisuke, Katase Takayoshi, Kamiya Toshio, Kimura Yoshisato, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts   2019.2   2999 - 2999   2019.9

New crystal structure built from a GeO6-GeO5 polyhedra network with high thermal stability: b-SrGe2O5 Reviewed

Christian A. Niedermeier, Junichi Yamaura, Jiazhen Wu, Xinyi He, Takayoshi Katase, Hideo Hosono, Toshio Kamiya

ACS Appl. Electron. Mater.   1   1989 - 1993   2019.9

New Amorphous In-Ga-Zn-O Thin-Film Transistor-Based Optical Pixel Sensor for Optical Input Signal With Short Wavelength

Chia-En Wu, Keisuke Ide, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Chih-Lung Lin, Toshio Kamiya

IEEE TRANSACTIONS ON ELECTRON DEVICES   66 ( 9 )   3848 - 3853   2019.9

Symmetric Ambipolar Thin-Film Transistors and High-Gain CMOS-like Inverters Using Environmentally Friendly Copper Nitride Reviewed

Kosuke Matsuzaki, Takayoshi Katase, Toshio Kamiya, Hideo Hosono

ACS Appl. Mater. Interfaces   11   35132 - 35137   2019.8

Intrinsic and Extrinsic Defects in Layered Nitride Semiconductor SrTiN2

Xinyi He, Zewen Xiao, Takayoshi Katase, Keisuke Ide, Hideo Hosono, Toshio Kamiya

JOURNAL OF PHYSICAL CHEMISTRY C   123 ( 32 )   19307 - 19314   2019.8

Effects of Base Pressure on Growth and Optoelectronic Properties of Amorphous In-Ga-Zn-O: Ultralow Optimum Oxygen Supply and Bandgap Widening

Keisuke Ide, Kyohei Ishikawa, Haochun Tang, Takayoshi Katase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   216 ( 5 )   2019.3

Multiple Color Inorganic Thin-Film Phosphor, RE-Doped Amorphous Gallium Oxide (RE = Rare Earth: Pr, Sm, Tb, and Dy), Deposited at Room Temperature

Naoto Watanabe, Keisuke Ide, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   216 ( 5 )   2019.3

Electronic Defects in Amorphous Oxide Semiconductors: A Review

Keisuke Ide, Kenji Nomura, Hideo Hosono, Toshio Kamiya

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   216 ( 5 )   2019.3

Thermoelectric property for Ba_xSr_1-xSi₂ films by co-sputtering process

Aoyama Kodai, Shimizu Takao, Kuramochi Hideto, Mesuda Masami, Akiike Ryo, Ide Keisuke, Katase Takayoshi, Kamiya Toshio, Kimura Yoshisato, Funakubo Hiroshi

JSAP Annual Meetings Extended Abstracts   2019.1   1843 - 1843   2019.2

Insulator-like behavior coexisting with metallic electronic structure in strained FeSe thin films grown by molecular beam epitaxy Reviewed

Kota Hanzawa, Yuta Yamaguchi, Yukiko Obata, Satoru Matsuishi, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

PHYSICAL REVIEW B   99 ( 035148 )   2019.1

Metal oxide semiconductor thin-films and related devices

Mamoru Furuta, Mutsumi Kimura, Toshio Kamiya, Yukiharu Uraoka

Japanese Journal of Applied Physics   58 ( 9 )   2019

Electronic structure of interstitial hydrogen in In-Ga-Zn-O semiconductor simulated by muon Reviewed

Kojima, K.M., Hiraishi, M., Okabe, H., Koda, A., Kadono, R., Ide, K., Matsuishi, S., Kumomi, H., Kamiya, T., Hosono, H.

Applied Physics Letters   115 ( 12 )   2019

Transition metal-doped amorphous oxide semiconductor thin-film phosphor, chromium-doped amorphous gallium oxide Reviewed

Keisuke Ide, Yuki Futakado, Naoto Watanabe, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

physica status solidi (a)   1800198   2018.8

Multiple states and roles of hydrogen in p-type SnS semiconductors

Zewen Xiao, Fan-Yong Ran, Min Liao, Hidenori Hiramatsu, Keisuke Ide, Hideo Hosono, Toshio Kamiya

PHYSICAL CHEMISTRY CHEMICAL PHYSICS   20 ( 32 )   20952 - 20956   2018.8

Effects of impurity hydrogen in amorphous In-Ga-Zn-O: ultralow optimum oxygen supply for ultrahigh vacuum sputtering and bandgap widening by impurity hydrogen Reviewed

Keisuke Ide, Kyohei Ishikawa, Haochun Tang, Takayoshi Katase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

physica status solidi (a)   8   1700832   2018.2

Multi-color light-emitting thin films based on ultra-wide bandgap amorphous oxide semiconductor deposited at room temperature on glass Reviewed

Naoto Watanabe, Keisuke Ide, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

physica status solidi (a)   8   1700833   2018.1

An Exceptionally Narrow Band-Gap (similar to 4 eV) Silicate Predicted in the Cubic Perovskite Structure: BaSiO3 Reviewed

Hidenori Hiramatsu, Hitoshi Yusa, Ryo Igarashi, Yasuo Ohishi, Toshio Kamiya, Hideo Hosono

INORGANIC CHEMISTRY   56 ( 17 )   10535 - 10542   2017.9

The Unique Electronic Structure of Mg2Si: Shaping the Conduction Bands of Semiconductors with Multicenter Bonding Reviewed

Hiroshi Mizoguchi, Yoshinori Muraba, Daniel C. Fredrickson, Satoru Matsuishi, Toshio Kamiya, Hideo Hosono

ANGEWANDTE CHEMIE-INTERNATIONAL EDITION   56 ( 34 )   10135 - 10139   2017.8

Key Factors for Insulator-Superconductor Transition in FeSe Thin Films by Electric Field Reviewed

Kota Hanzawa, Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY   27 ( 4 )   2017.6

P-187: Electronic Structures of Various Color Light-Emitting Amorphous Oxide Semiconductor Thin Films

Naoto Watanabe, Junghwan Kim, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

SID Symposium Digest of Technical Papers   48 ( 1 )   1974 - 1976   2017.5

Electron effective mass and mobility limits in degenerate perovskite stannate BaSnO3 Reviewed

Christian A. Niedermeier, Sneha Rhode, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya, Michelle A. Moram

PHYSICAL REVIEW B   95 ( 16 )   2017.4

BaFe2(As1-xPx)(2) (x=0.22-0.42) thin films grown on practical metal-tape substrates and their critical current densities Reviewed

Hidenori Hiramatsu, Hikaru Sato, Toshio Kamiya, Hideo Hosono

SUPERCONDUCTOR SCIENCE & TECHNOLOGY   30 ( 4 )   2017.4

Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In-Ga-Zn-O thin-film transistors

Keisuke Ide, Mitsuho Kikuchi, Masato Ota, Masato Sasase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

JAPANESE JOURNAL OF APPLIED PHYSICS   56 ( 3 )   2017.3

Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor Reviewed

Junghwan Kim, Takumi Sekiya, Norihiko Miyokawa, Naoto Watanabe, Koji Kimoto, Keisuke Ide, Yoshitake Toda, Shigenori Ueda, Naoki Ohashi, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

NPG ASIA MATERIALS   9   2017.3

Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs Reviewed

Hideo Hosono, Junghwan Kim, Yoshitake Toda, Toshio Kamiya, Satoru Watanabe

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA   114 ( 2 )   233 - 238   2017.1

Publisher's Note: Amorphous Gallium Oxide as an Improved Host for Inorganic Light-Emitting Thin Film Semiconductor Fabricated at Room Temperature on Glass (vol 6, pg P410, 2017) Reviewed

Naoto Watanabe, Junghwan Kim, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Shigenori Ueda, Hideo Hosono, Toshio Kamiya

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   6 ( 8 )   XI - XI   2017

Amorphous Gallium Oxide as an Improved Host for Inorganic Light-Emitting Thin Film Semiconductor Fabricated at Room Temperature on Glass (vol 6, pg P410, 2017) Reviewed

Naoto Watanabe, Junghwan Kim, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Shigenori Ueda, Hideo Hosono, Toshio Kamiya

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   6 ( 7 )   X1 - X1   2017

Amorphous Gallium Oxide as an Improved Host for Inorganic Light-Emitting Thin Film Semiconductor Fabricated at Room Temperature on Glass Reviewed

Naoto Watanabe, Junghwan Kim, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Shigenori Ueda, Hideo Hosono, Toshio Kamiya

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   6 ( 7 )   P410 - P414   2017

Multiple Roles of Hydrogen Treatments in Amorphous In-Ga-Zn-O Films Reviewed

Haochun Tang, Yosuke Kishida, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Satoru Matsuishi, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   6 ( 7 )   P365 - P372   2017

Amorphous pnictide semiconductor BaZn2As2 exhibiting high hole mobility Reviewed

Zewen Xiao, Fan-Yong Ran, Min Liao, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

APPLIED PHYSICS LETTERS   109 ( 24 )   2016.12

Enhanced critical-current in P-doped BaFe2As2 thin films on metal substrates arising from poorly aligned grain boundaries Reviewed

Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

SCIENTIFIC REPORTS   6   2016.11

Preface Reviewed

David Ginley, Claes-G. Granqvist, George Kiriakidis, Andreas Klein, Toshio Kamiya, Hideo Hosono

Thin Solid Films   614   43   2016.9

Effects of thermal annealing on elimination of deep defects in amorphous In-Ga-Zn-O thin-film transistors Reviewed

Haochun Tang, Keisuke Ide, Hidenori Hiramatsu, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

THIN SOLID FILMS   614   73 - 78   2016.9

Ultrawide band gap amorphous oxide semiconductor, Ga-Zn-O Reviewed

Junghwan Kim, Norihiko Miyokawa, Takumi Sekiya, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

THIN SOLID FILMS   614   84 - 89   2016.9

Novel solid-phase epitaxy for multi-component materials with extremely high vapor pressure elements: An application to KFe2As2 Reviewed

Taisuke Hatakeyama, Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

APPLIED PHYSICS EXPRESS   9 ( 5 )   2016.5

Transparent amorphous oxide semiconductor thin film phosphor, In-Mg-O:Eu Reviewed

Junghwan Kim, Norihiko Miyokawa, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   124 ( 5 )   532 - 535   2016.5

69-4: NBIS-Stable Oxide Thin-Film Transistors Using Ultra-Wide Bandgap Amorphous Oxide Semiconductors

Junghwan Kim, Nobuhiro Nakamura, Toshio Kamiya, Hideo Hosono

SID Symposium Digest of Technical Papers   47 ( 1 )   951 - 953   2016.5

31-4: Novel Inorganic Electron Injection and Transport Materials Enabling Large-Sized Inverted OLEDs Driven by Oxide TFTs

Hideo Hosono, Junghwan Kim, Toshio Kamiya, Nobuhiro Nakamura, Satoru Watanabe

SID Symposium Digest of Technical Papers   47 ( 1 )   401 - 404   2016.5

N-type conduction in SnS by anion substitution with Cl Reviewed

Hiroshi Yanagi, Yuki Iguchi, Taiki Sugiyama, Toshio Kamiya, Hideo Hosono

Applied Physics Express   9 ( 5 )   2016.4

Solid phase epitaxial growth of high mobility La: BaSnO3 thin films co-doped with interstitial hydrogen Reviewed

Christian A. Niedermeier, Sneha Rhode, Sarah Fearn, Keisuke Ide, Michelle A. Moram, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

APPLIED PHYSICS LETTERS   108 ( 17 )   2016.4

Electric field-induced superconducting transition of insulating FeSe thin film at 35 K Reviewed

Kota Hanzawa, Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA   113 ( 15 )   3986 - 3990   2016.4

Nonequilibrium Rock-Salt-Type Pb-Doped SnSe with High Carrier Mobilities approximate to 300 cm(2)/(Vs) Reviewed

Takeshi Inoue, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

CHEMISTRY OF MATERIALS   28 ( 7 )   2278 - 2286   2016.4

Oxide TFTs Reviewed

Toshio Kamiya, Hideo Hosono

Handbook of Visual Display Technology   1111 - 1144   2016.1

SnS thin films prepared by H2S-free process and its p-type thin film transistor Reviewed

Fan-Yong Ran, Zewen Xiao, Hidenori Hiramatsu, Keisuke Ide, Hideo Hosono, Toshio Kamiya

AIP ADVANCES   6 ( 1 )   2016.1

Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor Reviewed

Junghwan Kim, Norihiko Miyokawa, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

AIP ADVANCES   6 ( 1 )   2016.1

Why high-pressure sputtering must be avoided to deposit a-In-Ga-Zn-O films Reviewed

Keisuke Ide, Mitsuho Kikuchi, Masato Sasase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

2016 23RD INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD)   298 - 301   2016

Difficulty of carrier generation in orthorhombic PbO Reviewed

Liao Min, Takemoto Seiji, Xiao Zewen, Toda Yoshitake, Tada Tomofumi, Ueda Shigenori, Kamiya Toshio, Hosono Hideo

Journal of Applied Physics   119 ( 16 )   2016

Electron Confinement in Channel Spaces for One-Dimensional Electride Reviewed

Yaoqing Zhang, Zewen Xiao, Toshio Kamiya, Hideo Hosono

JOURNAL OF PHYSICAL CHEMISTRY LETTERS   6 ( 24 )   4966 - 4971   2015.12

Heteroepitaxial growth of SnSe films by pulsed laser deposition using Se-rich targets Reviewed

Takeshi Inoue, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

JOURNAL OF APPLIED PHYSICS   118 ( 20 )   2015.11

Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films Reviewed

Haochun Tang, Kyohei Ishikawa, Keisuke Ide, Hidenori Hiramatsu, Shigenori Ueda, Naoki Ohashi, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

JOURNAL OF APPLIED PHYSICS   118 ( 20 )   2015.11

Ligand-Hole in [SnI6] Unit and Origin of Band Gap in Photovoltaic Perovskite Variant Cs2SnI6 Reviewed

Zewen Xiao, Hechang Lei, Xiao Zhang, Yuanyuan Zhou, Hideo Hosono, Toshio Kamiya

BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN   88 ( 9 )   1250 - 1255   2015.9

Analyses of Surface and Interfacial Layers in Polycrystalline Cu2O Thin-Film Transistors Reviewed

Fan-Yong Ran, Masataka Taniguti, Hideo Hosono, Toshio Kamiya

JOURNAL OF DISPLAY TECHNOLOGY   11 ( 9 )   720 - 724   2015.9

Detection of dead layers and defects in polycrystalline Cu2O thin-film transistors by x-ray reflectivity and photoresponse spectroscopy analyses Reviewed

Fan-Yong Ran, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya, Masataka Taniguti

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   33 ( 5 )   2015.9

Effects of sulfur substitution in amorphous InGaZnO4: optical properties and first-principles calculations Reviewed

Junghwan Kim, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   123 ( 1439 )   537 - 541   2015.7

Fabrication and opto-electrical properties of amorphous (Zn, B) O thin film by pulsed laser deposition Reviewed

Hao-Chun Tang, Junghwan Kim, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   123 ( 1439 )   523 - 526   2015.7

Origin of Lower Film Density and Larger Defect Density in Amorphous In-Ga-Zn-O Deposited at High Total Pressure Reviewed

Jakub Grochowski, Yuichiro Hanyu, Katsumi Abe, Jakub Kaczmarski, Jan Dyczewski, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

JOURNAL OF DISPLAY TECHNOLOGY   11 ( 6 )   523 - 527   2015.6

Vortex Pinning Properties of Phosphorous-Doped BaFe2As2 Epitaxial Films: Comparison Between (La, Sr)(Al, Ta)O-3 and MgO Substrates Reviewed

Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY   25 ( 3 )   2015.6

P-177L:Late-News Poster: Highly Efficient Inverted OLEDs using A New Transparent Amorphous Oxide Semiconductor

Junghwan Kim, Satoru Watanabe, Eiji Matsuzaki, Nobuhiro Nakamura, Naomichi Miyakawa, Yoshitake Toda, Toshio Kamiya, Hideo Hosono

SID Symposium Digest of Technical Papers   46 ( 1 )   1714 - 1716   2015.6

n-type conversion of SnS by isovalent ion substitution: Geometrical doping as a new doping route Reviewed

Fan-Yong Ran, Zewen Xiao, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

SCIENTIFIC REPORTS   5   2015.5

Route to n-type doping in SnS Reviewed

Zewen Xiao, Fan-Yong Ran, Hideo Hosono, Toshio Kamiya

APPLIED PHYSICS LETTERS   106 ( 15 )   2015.4

Widely bandgap tunable amorphous Cd-Ga-O oxide semiconductors exhibiting electron mobilities ≥10-cm2-V-1-s-1 Reviewed

Yanagi, H., Sato, C., Kimura, Y., Suzuki, I., Omata, T., Kamiya, T., Hosono, H.

Applied Physics Letters   106 ( 8 )   82106   2015.2

Effects of Pb Doping on Hole Transport Properties and Thin-Film Transistor Characteristics of SnO Thin Films Reviewed

Min Liao, Zewen Xiao, Fan-Yong Ran, Hideya Kumomi, Toshio Kamiya, Hideo Hosono

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   4 ( 3 )   Q26 - Q30   2015

Intrinsic defects in a photovoltaic perovskite variant Cs2SnI6 Reviewed

Zewen Xiao, Yuanyuan Zhou, Hideo Hosono, Toshio Kamiya

PHYSICAL CHEMISTRY CHEMICAL PHYSICS   17 ( 29 )   18900 - 18903   2015

Advances in oxide thin-film transistors in recent decade and their future Reviewed

Hideya Kumomi, Toshio Kamiya, Hideo Hosono

ECS Transactions   67 ( 1 )   3 - 8   2015

Effects of High-Temperature Annealing on Operation Characteristics of a-In-Ga-Zn-O TFTs Reviewed

Yuichiro Hanyu, Katsumi Abe, Kay Domen, Kenji Nomura, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

JOURNAL OF DISPLAY TECHNOLOGY   10 ( 11 )   979 - 983   2014.11

Two-Dimensional Transition-Metal Electride Y2C Reviewed

Xiao Zhang, Zewen Xiao, Hechang Lei, Yoshitake Toda, Satoru Matsuishi, Toshio Kamiya, Shigenori Ueda, Hideo Hosono

CHEMISTRY OF MATERIALS   26 ( 22 )   6638 - 6643   2014.11

Positive-Bias Stress Test on Amorphous In-Ga-Zn-O Thin Film Transistor: Annealing-Temperature Dependence Reviewed

Kay Domen, Takaya Miyase, Katsumi Abe, Hideo Hosono, Toshio Kamiya

JOURNAL OF DISPLAY TECHNOLOGY   10 ( 11 )   975 - 978   2014.11

Narrow Bandgap in beta-BaZn2As2 and Its Chemical Origins Reviewed

Zewen Xiao, Hidenori Hiramatsu, Shigenori Ueda, Yoshitake Toda, Fan-Yong Ran, Jiangang Guo, Hechang Lei, Satoru Matsuishi, Hideo Hosono, Toshio Kamiya

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY   136 ( 42 )   14959 - 14965   2014.10

Growth of c-Axis-Oriented Superconducting KFe2As2 Thin Films Reviewed

Hidenori Hiramatsu, Shogo Matsuda, Hikaru Sato, Toshio Kamiya, Hideo Hosono

ACS APPLIED MATERIALS & INTERFACES   6 ( 16 )   14293 - 14301   2014.8

Positive Gate Bias Instability Induced by Diffusion of Neutral Hydrogen in Amorphous In-Ga-Zn-O Thin-Film Transistor Reviewed

Kay Domen, Takaya Miyase, Katsumi Abe, Hideo Hosono, Toshio Kamiya

IEEE ELECTRON DEVICE LETTERS   35 ( 8 )   832 - 834   2014.8

Fabrication and characterization of ZnS:(Cu,Al) thin film phosphors on glass substrates by pulsed laser deposition Reviewed

Junghwan Kim, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

THIN SOLID FILMS   559   18 - 22   2014.5

High critical-current density with less anisotropy in BaFe2(As,P)(2) epitaxial thin films: Effect of intentionally grown c-axis vortex-pinning centers Reviewed

Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

APPLIED PHYSICS LETTERS   104 ( 18 )   2014.5

Epitaxial growth and electronic structure of a layered zinc pnictide semiconductor, beta-BaZn2As2 Reviewed

Zewen Xiao, Fan-Yong Ran, Hidenori Hiramatsu, Satoru Matsuishi, Hideo Hosono, Toshio Kamiya

THIN SOLID FILMS   559   100 - 104   2014.5

Mobility-and temperature-dependent device model for amorphous In-Ga-Zn-O thin-film transistors Reviewed

Katsumi Abe, Ayumu Sato, Kenji Takahashi, Hideya Kumomi, Toshio Kamiya, Hideo Hosono

THIN SOLID FILMS   559   40 - 43   2014.5

Growth of high-quality SnS epitaxial films by H2S flow pulsed laser deposition Reviewed

Fan-Yong Ran, Zewen Xiao, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

APPLIED PHYSICS LETTERS   104 ( 7 )   2014.2

Superconductivity in noncentrosymmetric ternary equiatomic pnictides LaMP (M = Ir and Rh; P = P and As) Reviewed

Yanpeng Qi, Jiangang Guo, Hechang Lei, Zewen Xiao, Toshio Kamiya, Hideo Hosono

PHYSICAL REVIEW B   89 ( 2 )   2014.1

Critical factor for epitaxial growth of cobalt-doped BaFe2As2 films by pulsed laser deposition Reviewed

Hiramatsu, Hidenori, Sato, Hikaru, Katase, Takayoshi, Kamiya, Toshio, Hosono, Hideo

Applied Physics Letters   104 ( 17 )   72602   2014

Electric double-layer transistor using layered iron selenide Mott insulator TlFe1.6Se2 Reviewed

Katase, Takayoshi, Hiramatsu, Hidenori, Kamiya, Toshio, Hosono, Hideo

Proceedings of the National Academy of Sciences of the United States of America   111 ( 11 )   3979 - 3983   2014

Film Texture, Hole Transport and Field-Effect Mobility in Polycrystalline SnO Thin Films on Glass Reviewed

Po-Ching Hsu, Chung-Chih Wu, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   3 ( 9 )   Q3040 - Q3044   2014

Light Irradiation and Applied Voltage History Sensors using Amorphous In-Ga-Zn-O Thin-Film Transistors exposed to Ozone Annealing and fabricated under High Oxygen Pressure Reviewed

Mutsumi Kimura, Takayuki Hasegawa, Tokiyoshi Matsuda, Keisuke Ide, Kenji Nomura, Toshio Kamiya, Hideo Hosono

2014 21ST INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD)   319 - 322   2014

Roles of Hydrogen in Amorphous Oxide Semiconductor In-Ga-Zn-O: Comparison of Conventional and Ultra-High-Vacuum Sputtering Reviewed

Takaya Miyase, Ken Watanabe, Isao Sakaguchi, Naoki Ohashi, Kay Domen, Kenji Nomura, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   3 ( 9 )   Q3085 - Q3090   2014

Magnetic structure and electromagnetic properties of LnCrAsO with a ZrCuSiAs-type structure (Ln = La, Ce, Pr, and Nd) Reviewed

Park, S.-W., Mizoguchi, H., Kodama, K., Shamoto, S.-I., Otomo, T., Matsuishi, S., Kamiya, T., Hosono, H.

Inorganic Chemistry   52 ( 23 )   13363 - 13368   2013.12

Surface reactivity and oxygen migration in amorphous indium-gallium-zinc oxide films annealed in humid atmosphere Reviewed

Ken Watanabe, Dong-Hee Lee, Isao Sakaguchi, Kenji Nomura, Toshio Kamiya, Hajime Haneda, Hideo Hosono, Naoki Ohashi

APPLIED PHYSICS LETTERS   103 ( 20 )   2013.11

Hydrogen passivation of electron trap in amorphous In-Ga-Zn-O thin-film transistors Reviewed

Yuichiro Hanyu, Kay Domen, Kenji Nomura, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

APPLIED PHYSICS LETTERS   103 ( 20 )   2013.11

Amorphous Oxide Semiconductor Thin Films

KAMIYA Toshio, KUMOMI Hideya, HOSONO Hideo

Jitsumu Hyomen Gijutsu   64 ( 7 )   392 - 395   2013.7

Apparent high mobility similar to 30cm(2)/Vs of amorphous In-Ga-Zn-O thin-film transistor and its origin Reviewed

Zewen Xiao, Kay Domen, Toshio Kamiya, Hideo Hosono

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   121 ( 1411 )   295 - 298   2013.3

Unusual pressure effects on the superconductivity of indirectly electron-doped (Ba1-xLax)Fe2As2 epitaxial films Reviewed

Katase, T., Sato, H., Hiramatsu, H., Kamiya, T., Hosono, H.

Physical Review B - Condensed Matter and Materials Physics   88 ( 14 )   503   2013

Anomalous scaling behavior in a mixed-state Hall effect of a cobalt-doped BaFe2As2 epitaxial film with a high critical current density over 1 MA/cm(2) Reviewed

Sato, Hikaru, Katase, Takayoshi, Kang, Won Nam, Hiramatsu, Hidenori, Kamiya, Toshio, Hosono, Hideo

Physical Review B   87 ( 6 )   064504   2013

Magnetic scattering and electron pair breaking by rare-earth-ion substitution in BaFe2As2 epitaxial films Reviewed

Katase, T., Hiramatsu, H., Kamiya, T., Hosono, H.

New Journal of Physics   15   073019   2013

Superconducting Properties and Phase Diagram of Indirectly Electron-Doped (Sr1-xLax)Fe2As2 Epitaxial Films Grown by Pulsed Laser Deposition Reviewed

Hiramatsu, Hidenori, Katase, Takayoshi, Kamiya, Toshio, Hosono, Hideo

Ieee Transactions on Applied Superconductivity   23 ( 3 )   7300405   2013

3-D Stacked complementary TFT devices using n-Type a-IGZO and p-Type F8T2 TFTs comparison between stacked and sided configurations

Takayuki Hasegawa, Masashi Inoue, Tokiyoshi Matsuda, Mutsumi Kimura, Kenji Nomura, Toshio Kamiya, Hideo Hosono

Proceedings of the International Display Workshops   1   331 - 332   2013

Effects of Diffusion of Hydrogen and Oxygen on Electrical Properties of Amorphous Oxide Semiconductor, In-Ga-Zn-O Reviewed

Kenji Nomura, Toshio Kamiya, Hideo Hosono

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   2 ( 1 )   P5 - P8   2013

Roles of hydrogen in amorphous oxide semiconductor Reviewed

T. Kamiya, H. Hosono

ECS Transactions   54 ( 1 )   103 - 113   2013

3-D stacked complementary TFT devices using n-type α-IGZO and p-type F8T2 TFTs - Operation confirmation of NOT and NAND logic circuits - Operation c Reviewed

Mutsumi Kimura, Takayuki Hasegawa, Masashi Inoue, Kenji Nomura, Toshio Kamiya, Hideo Hosono

Digest of Technical Papers - SID International Symposium   44 ( 1 )   995 - 998   2013

Electronic structure, carrier transport, defects and impurities in amorphous oxide semiconductor Reviewed

Toshio Kamiya, Kenji Nomura, Hideo Hosono

Digest of Technical Papers - SID International Symposium   44 ( 1 )   11 - 13   2013

Doping effects in amorphous oxides Reviewed

Funabiki, Fuji, Kamiya, Toshio, Hosono, Hideo

Journal of the Ceramic Society of Japan   120 ( 1407 )   447 - 457   2012.11

Optical evidence for quantization in transparent amorphous oxide semiconductor superlattice Reviewed

Katsumi Abe, Kenji Nomura, Toshio Kamiya, Hideo Hosono

Physical Review B - Condensed Matter and Materials Physics   86 ( 8 )   2012.8

Band alignment of InGaZnO4/Si interface by hard x-ray photoelectron spectroscopy Reviewed

Lee, Kyeongmi, Nomura, Kenji, Yanagi, Hiroshi, Kamiya, Toshio, Ikenaga, Eiji, Sugiyama, Takeharu, Kobayashi, Keisuke, Hosono, Hideo

Journal of Applied Physics   112 ( 3 )   2012.8

Optical evidence for quantization in transparent amorphous oxide semiconductor superlattice Reviewed

Katsumi Abe, Kenji Nomura, Toshio Kamiya, Hideo Hosono

PHYSICAL REVIEW B   86 ( 8 )   2012.8

Amorphous In-Ga-Zn-O Dual-Gate TFTs: Current-Voltage Characteristics and Electrical Stress Instabilities Reviewed

Katsumi Abe, Kenji Takahashi, Ayumu Sato, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Jerzy Kanicki, Hideo Hosono

IEEE TRANSACTIONS ON ELECTRON DEVICES   59 ( 7 )   1928 - 1935   2012.7

Superconducting compounds with metallic square net Reviewed

Hiroshi Mizoguchi, Toshio Kamiya, Hideo Hosono

SOLID STATE COMMUNICATIONS   152 ( 8 )   666 - 670   2012.4

Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O Reviewed

Keisuke Ide, Kenji Nomura, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

JOURNAL OF APPLIED PHYSICS   111 ( 7 )   2012.4

Preface Reviewed

David Ginley, Toshio Kamiya, Yuzo Shigesato, Hideo Hosono

Thin Solid Films   520 ( 10 )   3713   2012.3

Operation model with carrier-density dependent mobility for amorphous In-Ga-Zn-O thin-film transistors Reviewed

Katsumi Abe, Kenji Takahashi, Ayumu Sato, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo Hosono

THIN SOLID FILMS   520 ( 10 )   3791 - 3795   2012.3

Stability and high-frequency operation of amorphous In-Ga-Zn-O thin-film transistors with various passivation layers Reviewed

Kenji Nomura, Toshio Kamiya, Hideo Hosono

THIN SOLID FILMS   520 ( 10 )   3778 - 3782   2012.3

Effects of low-temperature ozone annealing on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors Reviewed

Keisuke Ide, Yutomo Kikuchi, Kenji Nomura, Toshio Kamiya, Hideo Hosono

THIN SOLID FILMS   520 ( 10 )   3787 - 3790   2012.3

Role of lone pair electrons in determining the optoelectronic properties of BiCuOSe Reviewed

S. Sallis, L. F. J. Piper, J. Francis, J. Tate, H. Hiramatsu, T. Kamiya, H. Hosono

PHYSICAL REVIEW B   85 ( 8 )   2012.2

Electron injection barriers between air-stable electride with low work function, C12A7:e(-), and pentacene, C-60 and copper phthalocyanine Invited Reviewed

Yanagi, Hiroshi, Kuroda, Toshifumi, Kim, Ki-Beom, Toda, Yoshitake, Kamiya, Toshio, Hosono, Hideo

Journal of Materials Chemistry   22 ( 10 )   4278 - 4281   2012.1

Thin Film Growth and Device Fabrication of Iron-Based Superconductors Reviewed

Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Hideo Hosono

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   81 ( 1 )   2012.1

Photovoltaic properties of n-type amorphous In-Ga-Zn-O and p-type single crystal Si heterojunction solar cells: Effects of Ga content Reviewed

Lee, Kyeongmi, Nomura, Kenji, Yanagi, Hiroshi, Kamiya, Toshio, Hosono, Hideo

Thin Solid Films   520 ( 10 )   3808 - 3812   2012

Thin film growth by pulsed laser deposition and properties of 122-type iron-based superconductor AE(Fe1-xCox)(2)As-2 (AE = alkaline earth) Reviewed

Katase, Takayoshi, Hiramatsu, Hidenori, Kamiya, Toshio, Hosono, Hideo

Superconductor Science & Technology   25 ( 8 )   084015   2012

Microstructure and transport properties of [0 0 1]-tilt bicrystal grain boundaries in iron pnictide superconductor, cobalt-doped BaFe 2As 2 Reviewed

Hiramatsu, H., Katase, T., Ishimaru, Y., Tsukamoto, A., Kamiya, T., Tanabe, K., Hosono, H.

Materials Science and Engineering B: Solid-State Materials for Advanced Technology   177 ( 7 )   515 - 519   2012

Identical effects of indirect and direct electron doping of superconducting BaFe2As2 thin films Reviewed

Katase, Takayoshi, Iimura, Soshi, Hiramatsu, Hidenori, Kamiya, Toshio, Hosono, Hideo

Physical Review B   85 ( 14 )   140516   2012

Light Irradiation History Sensor Using Amorphous In-Ga-Zn-O Thin-Film Transistor Exposed to Ozone Annealing Reviewed

Kimura, Mutsumi, Hasegawa, Takayuki, Ide, Keisuke, Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo

Ieee Electron Device Letters   33 ( 3 )   384 - 386   2012

Maximum applied voltage detector using amorphous In-Ga-Zn-O thin-film transistor exposed to ozone annealing Reviewed

Kimura, Mutsumi, Hasegawa, Takayuki, Ide, Keisuke, Nomura, Kenji, Kamiya, Toshio, Hosono, Hideo

Solid-State Electronics   75   74 - 76   2012

Present Status, Knowledge and Issues of Oxide Semiconductor Technology Reviewed

Toshio Kamiya, Kenji Nomura, Hideo Hosono

IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 1   19   405 - 408   2012

Characteristic shift of a CTFT inverter using n-type IGZO and p-type F8T2 TFTs after temperature and operation stresses Reviewed

Masashi Inoue, Takayuki Hasegawa, Takashi Nakanishi, Mutsumi Kimura, Kenji Nomura, Toshio Kamiya, Hideo Hosono

IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai   126 - 127   2012

Light Irradiation History Sensor Using Amorphous In-Ga-Zn-O Thin-Film Transistor Fabricated by High Oxygen Partial Pressure Sputtering Reviewed

Takayuki Hasegwa, Mutsumi Kimura, Keisuke Ide, Kenji Nomura, Toshio Kamiya, Hideo Hosono

2012 19TH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD): TFT TECHNOLOGIES AND FPD MATERIALS   41 - +   2012

Metal-Semiconductor Field-Effect Transistor Made Using Amorphous In-Ga-Zn-O Channel and Bottom Pt Schottky Contact Structure at 200 degrees C Reviewed

Dong Hee Lee, Kenji Nomura, Toshio Kamiya, Hideo Hosono

ECS SOLID STATE LETTERS   1 ( 1 )   Q8 - Q10   2012

Diffusion-Limited a-IGZO/Pt Schottky Junction Fabricated at 200 degrees C on a Flexible Substrate Reviewed

Dong Hee Lee, Kenji Nomura, Toshio Kamiya, Hideo Hosono

IEEE ELECTRON DEVICE LETTERS   32 ( 12 )   1695 - 1697   2011.12

Excimer laser crystallization of InGaZnO4 on SiO2 substrate Reviewed

Tao Chen, Meng-Yue Wu, Ryoichi Ishihara, Kenji Nomura, Toshio Kamiya, Hideo Hosono, C. I. M. Beenakker

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS   22 ( 11 )   1694 - 1696   2011.11

Simple Analytical Model of On Operation of Amorphous In-Ga-Zn-O Thin-Film Transistors Reviewed

Katsumi Abe, Nobuyuki Kaji, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

IEEE TRANSACTIONS ON ELECTRON DEVICES   58 ( 10 )   3463 - 3471   2011.10

A germanate transparent conductive oxide Reviewed

Hiroshi Mizoguchi, Toshio Kamiya, Satoru Matsuishi, Hideo Hosono

NATURE COMMUNICATIONS   2   2011.9

Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects Reviewed

Kenji Nomura, Toshio Kamiya, Hideo Hosono

APPLIED PHYSICS LETTERS   99 ( 5 )   2011.8

Solid-phase epitaxial growth of (111)-oriented Si film on InGaO3(ZnO)(5) buffer layer Reviewed

Tao Chen, Meng-Yue Wu, Ryoichi Ishihara, Kenji Nomura, Toshio Kamiya, Hideo Hosono, C. I. M. Beenakker

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS   22 ( 8 )   920 - 923   2011.8

Ambipolar Oxide Thin-Film Transistor Reviewed

Kenji Nomura, Toshio Kamiya, Hideo Hosono

ADVANCED MATERIALS   23 ( 30 )   3431 - +   2011.8

New functionalities in abundant element oxides: ubiquitous element strategy Reviewed

Hideo Hosono, Katsuro Hayashi, Toshio Kamiya, Toshiyuki Atou, Tomofumi Susaki

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS   12 ( 3 )   2011.6

LaCo2B2: A Co-Based Layered Superconductor with a ThCr2Si2-Type Structure Reviewed

Hiroshi Mizoguchi, Toshiaki Kuroda, Toshio Kamiya, Hideo Hosono

PHYSICAL REVIEW LETTERS   106 ( 23 )   2011.6

Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy Reviewed

Kenji Nomura, Toshio Kamiya, Eiji Ikenaga, Hiroshi Yanagi, Keisuke Kobayashi, Hideo Hosono

JOURNAL OF APPLIED PHYSICS   109 ( 7 )   2011.4

Electronic Structure and Photovoltaic Properties of n-Type Amorphous In-Ga-Zn-O and p-Type Single Crystal Si Heterojunctions Reviewed

Kyeongmi Lee, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono

ELECTROCHEMICAL AND SOLID STATE LETTERS   14 ( 8 )   H346 - H349   2011

Biaxially textured cobalt-doped BaFe2As2 films with high critical current density over 1 MA/cm(2) on MgO-buffered metal-tape flexible substrates Reviewed

Katase, Takayoshi, Hiramatsu, Hidenori, Matias, Vladimir, Sheehan, Chris, Ishimaru, Yoshihiro, Kamiya, Toshio, Tanabe, Keiichi, Hosono, Hideo

Applied Physics Letters   98 ( 24 )   242510   2011

Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors Reviewed

Ide, Keisuke, Kikuchi, Yutomo, Nomura, Kenji, Kimura, Mutsumi, Kamiya, Toshio, Hosono, Hideo

Applied Physics Letters   99 ( 9 )   093507   2011

Advantageous grain boundaries in iron pnictide superconductors Reviewed

Katase, Takayoshi, Ishimaru, Yoshihiro, Tsukamoto, Akira, Hiramatsu, Hidenori, Kamiya, Toshio, Tanabe, Keiichi, Hosono, Hideo

Nature Communications   2   409   2011

Involvement of oxidative stress and mucosal addressin cell adhesion molecule-1 (MAdCAM-1) in inflammatory bowel disease

Tanida, Satoshi, Mizoshita, Tsutomu, Mizushima, Takashi, Sasaki, Makoto, Shimura, Takaya, Kamiya, Takeshi, Kataoka, Hiromi, Joh, Takashi

Journal of Clinical Biochemistry and Nutrition   48 ( 2 )   2011

Operation Characteristics of Thin-Film Transistors Using Very Thin Amorphous In-Ga-Zn-O Channels Reviewed

Lijie Shao, Kenji Nomura, Toshio Kamiya, Hideo Hosono

ELECTROCHEMICAL AND SOLID STATE LETTERS   14 ( 5 )   H197 - H200   2011

Late-news paper: An ambipolar oxide TFT

Hideo Hosono, Kenji Nomura, Toshio Kamiya

49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011   1   486 - 487   2011

Bias stability for a-In-Ga-Zn-O-TFTs: Origin of threshold voltage instability and the role of thermal annealing and passivation Reviewed

Kenji Nomura, Toshio Kamiya, Hideo Hosono

IDW'11: PROCEEDINGS OF THE 18TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3   587 - 590   2011

Bipolar Conduction in SnO Thin Films Reviewed

Hideo Hosono, Yoichi Ogo, Hiroshi Yanagi, Toshio Kamiya

ELECTROCHEMICAL AND SOLID STATE LETTERS   14 ( 1 )   II13 - II16   2011

Origins of Hole Doping and Relevant Optoelectronic Properties of Wide Gap p-Type Semiconductor, LaCuOSe Reviewed

Hiramatsu, Hidenori, Kamiya, Toshio, Tohei, Tetsuya, Ikenaga, Eiji, Mizoguchi, Teruyasu, Ikuhara, Yuichi, Kobayashi, Keisuke, Hosono, Hideo

Journal of the American Chemical Society   132 ( 42 )   15060 - 15067   2010.10

Electrical and magnetic properties of quaternary compounds LnMnPO (Ln = Nd, Sm, Gd) with ZrCuSiAs-type structure Reviewed

Yanagi, Hiroshi, Fukuma, Katsutoshi, Kamiya, Toshio, Hirano, Masahiro, Hosono, Hideo

Materials Science and Engineering B-Advanced Functional Solid-State Materials   173 ( 1-3 )   47 - 50   2010.10

Electronic structures of MnP-based crystals: LaMnOP, BaMn2P2, and KMnP Reviewed

Kamiya, Toshio, Yanagi, Hiroshi and, Watanabe, Takumi, Hirano, Masahiro, Hosono, Hideo

Materials Science and Engineering B-Advanced Functional Solid-State Materials   173 ( 1-3 )   239 - 243   2010.10

Short-channel nanowire transistor using a nanoporous crystal semiconductor 12CaO center dot 7Al(2)O(3) Reviewed

Nishio, Y., Nomura, K., Yanagi, H., Kamiya, T., Hirano, M., Hosono, H.

Materials Science and Engineering B-Advanced Functional Solid-State Materials   173 ( 1-3 )   37 - 40   2010.10

Sputtering formation of p-type SnO thin-film transistors on glass toward oxide complimentary circuits Reviewed

Hisato Yabuta, Nobuyuki Kaji, Ryo Hayashi, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

APPLIED PHYSICS LETTERS   97 ( 7 )   2010.8

Subgap states, doping and defect formation energies in amorphous oxide semiconductor a-InGaZnO4 studied by density functional theory Reviewed

Toshio Kamiya, Kenji Nomura, Hideo Hosono

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   207 ( 7 )   1698 - 1703   2010.7

Origin of high-density hole doping and an isotropic hole transport in a wide gap layered semiconductor LaCuOSe studied by first-principles calculations Reviewed

Hidenori Hiramatsu, Toshio Kamiya, Kazushige Ueda, Masahiro Hirano, Hideo Hosono

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   207 ( 7 )   1636 - 1641   2010.7

Intrinsic carrier mobility in amorphous In-Ga-Zn-O thin-film transistors determined by combined field-effect technique

Kimura, Mutsumi, Kamiya, Toshio, Nakanishi, Takashi, Nomura, Kenji, Hosono, Hideo

Applied Physics Letters   96 ( 26 )   262105   2010

Nitric oxide mitigates apoptosis in human endothelial cells induced by 9,10-phenanthrenequinone: Role of proteasomal function

Matsunaga, Toshiyuki, Arakaki, Marina, Kamiya, Tetsuro, Haga, Mariko, Endo, Satoshi, El-Kabbani, Ossama, Hara, Akira

Toxicology   268 ( 3 )   2010

Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In-Ga-Zn-O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors

Nomura, Kenji, Aoki, Takashi, Nakamura, Kiyoshi, Kamiya, Toshio, Nakanishi, Takashi, Hasegawa, Takayuki, Kimura, Mutsumi, Kawase, Takeo, Hirano, Masahiro, Hosono, Hideo

Applied Physics Letters   96 ( 26 )   263509   2010

Impurities in FeAs-based superconductor, SrFe2As2, studied by first-principles calculations Reviewed

Kamiya, Toshio, Hiramatsu, Hidenori, Katase, Takayoshi, Hirano, Masahiro, Hosono, Hideo

Materials Science and Engineering B-Advanced Functional Solid-State Materials   173 ( 1-3 )   244 - 247   2010

DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2 epitaxial films Reviewed

Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Hidenori Hiramatsu, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono

Supercond. Sci. Technol.   23   082001   2010

Large Photoresponse in Amorphous In-Ga-Zn-O and Origin of Reversible and Slow Decay Reviewed

Dong Hee Lee, Ken-ichi Kawamura, Kenji Nomura, Toshio Kamiya, Hideo Hosono

ELECTROCHEMICAL AND SOLID STATE LETTERS   13 ( 9 )   II324 - II327   2010

Comparative study of transient current induced in SiC p(+)n and n(+)p diodes by heavy ion micro beams

Ohshima, Takeshi, Iwamoto, Naoya, Onoda, Shinobu, Kamiya, Tomihiro, Kawano, Katsuyasu

Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms   267 ( 12-13 )   2009

Fabrication of nanowires by varying energy microbeam lithography using heavy ions at the TIARA

Kamiya, T., Takano, K., Ishii, Y., Satoh, T., Oikawa, M., Ohkubo, T., Haga, J., Nishikawa, H., Furuta, Y., Uchiya, N., Seki, S., Sugimoto, M.

Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms   267 ( 12-13 )   2009

What have been clarified for amorphous oxide semiconductors?

Toshio Kamiya, Kenji Nomura, Hideo Hosono

2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009   2009

Editorial Reviewed

Hideo Hosono, David Ginley, Yuzo Shigesato, Toshio Kamiya

Thin Solid Films   516 ( 17 )   5749   2008.7

Itinerant ferromagnetism in the layered crystals LaCoOX (X=P,As) Reviewed

Yanagi, Hiroshi, Kawamura, Ryuto, Kamiya, Toshio, Kamihara, Yoichi, Hirano, Masahiro, Nakamura, Tetsuya, Osawa, Hitoshi, Hosono, Hideo

Physical Review B   77 ( 22 )   2008.6

Electromagnetic properties and electronic structure of the iron-based layered superconductor LaFePO Reviewed

Kamihara, Yoichi, Hirano, Masahiro, Yanagi, Hiroshi, Kamiya, Toshio, Saitoh, Yuji, Ikenaga, Eiji, Kobayashi, Keisuke, Hosono, Hideo

Physical Review B   77 ( 21 )   2008.6

Photosensitivity of amorphous IGZO TFTs for active-matrix flat-panel displays Reviewed

Chiao-Shun Chuang, Tze-Ching Fung, Barry G. Mullins, Kenji Nomura, Toshio Kamiya, Han-Ping David Shieh, Hideo Hosono, Jerzy Kanicki

2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-III   39   1215 - +   2008

The origins of high mobility and low operation voltage of amorphous oxide channel TFTs Reviewed

T. Kamiya, K. Nomura, H. Hosono

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS   61 - 62   2008

Invited paper: Improved amorphous in-Ga-Zn-O TFTs Reviewed

Ryo Hayashi, Ayumu Sato, Masato Ofuji, Katsumi Abe, Hisato Yabuta, Masafumi Sano, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-III   39   621 - +   2008

Modeling of amorphous oxide semiconductor thin film transistors and subgap density of states Reviewed

Hsing-Hung Hsieh, Toshio Kamiya, Kenji Nomura, Hideo Hosono, Chung-Chih Wu

2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-III   39   1277 - +   2008

Apparent bipolarity and Seebeck sign inversion in a layered semiconductor: LaZnOP Reviewed

Kayanuma, Kentaro, Hiramatsu, Hidenori, Hirano, Masahiro, Kawamura, Ryuto, Yanagi, Hiroshi, Kamiya, Toshio, Hosono, Hideo

Physical Review B   76 ( 19 )   2007.11

Circuits using uniform TFTs based on amorphous In-Ga-Zn-O Reviewed

Ryo Hayashi, Masato Ofuji, Nobuyuki Kaji, Kenji Takahashi, Katsumi Abe, Hisato Yabuta, Masafumi Sano, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY   15 ( 11 )   915 - 921   2007.11

Apparent bipolarity and Seebeck sign inversion in a layered semiconductor: LaZnOP Reviewed

Kentaro Kayanuma, Hidenori Hiramatsu, Masahiro Hirano, Ryuto Kawamura, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono

PHYSICAL REVIEW B   76 ( 19 )   2007.11

Anion incorporation-induced cage deformation in 12CaO center dot 7Al(2)O(3) crystal

Nomura, Takatoshi, Hayashi, Katsuro, Kubota, Yoshiki, Kamiya, Toshio, Hirano, Masahiro, Takata, Masaki, Hosono, Hideo

Chemistry Letters   36 ( 7 )   902 - 903   2007.7

Sn 0.9 In 0.1 P 2 O 7 -based organic/inorganic composite membranes

Heo, P., Nagao, M., Kamiya, T., Sano, M., Tomita, A., Hibino, T.

Journal of the Electrochemical Society   154 ( 1 )   2007

Novel room temperature stable electride 12SrO · 7Al 2O3 thin films: Fabrication, optical and electron transport properties

Miyakawa, M., Ueda, N., Kamiya, T., Hirano, M., Hosono, H.

Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan   115 ( 1345 )   2007

Intermediate-temperature proton conduction in Al 3+ -doped Sn P 2O 7

Tomita, A., Kajiyama, N., Kamiya, T., Nagao, M., Hibino, T.

Journal of the Electrochemical Society   154 ( 12 )   2007

Amorphous In-Ga-Zn-O based TFTs and circuits Reviewed

K. Abe, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, H. Hosono

IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3   1779 - +   2007

PHOTOELECTRON SPECTROSCOPIC STUDY OF ENERGY LEVEL ALIGNMENT AT C12A7:e(-)/Alq3 INTERFACES Reviewed

Ki-Beom Kim, Maiko Kikuchi, Masashi Miyakawa, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

CHARACTERIZATION AND CONTROL OF INTERFACES FOR HIGH QUALITY ADVANCED MATERIALS II   198   79 - +   2007

Electrode materials for low electron/hole injection barrier formation in OLED Reviewed

H. Hosono, K. Kim, H. Yanagi, T. Kamiya, H. Hiramatsu, M. Hirano

IDW '07: PROCEEDINGS OF THE 14TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3   259 - +   2007

Combinatorial study on In-Ga-Zn-O semiconductor films as active-channel layers for thin-film transistor

T. Iwasaki, N. Itagaki, T. Den, H. Kumomi, K. Nomura, T. Kamiya, H. Hosono

Materials Research Society Symposium Proceedings   928   80 - 85   2006.12

Device applications of transparent oxide semiconductors: Excitonic blue LED and transparent flexible TFT Reviewed

Toshio Kamiya, Hidenori Hiramatsu, Kenji Nomura, Hideo Hosono

JOURNAL OF ELECTROCERAMICS   17 ( 2-4 )   267 - 275   2006.12

Opto-electronic properties and light-emitting device application of widegap layered oxychalcogenides: LaCuOCh (Ch = chalcogen) and La2CdO2Se2

Hidenori Hiramatsu, Hayato Kamioka, Kazushige Ueda, Hiromichi Ohta, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   203 ( 11 )   2800 - 2811   2006.9

Iron-based layered superconductor: LaOFeP Reviewed

Kamihara, Yoichi, Hiramatsu, Hidenori, Hirano, Masahiro, Kawamura, Ryuto, Yanagi, Hiroshi, Kamiya, Toshio, Hosono, Hideo

Journal of the American Chemical Society   128 ( 31 )   10012 - 10013   2006.7

Erratum: Bipolar room temperature ferromagnetic semiconductor LaMnOP (Japanese Journal Applied Physics (2005) 44 (L1344)) Reviewed

Eiji Motomitsu, Masahiro Hirano, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono

Japanese Journal of Applied Physics, Part 2: Letters   45 ( 17-19 )   L512   2006.5

Synthesis, structure and physical properties of layered semiconductors MCuFCh (M = Sr, Eu, Ch = S, Se) Reviewed

Motomitsu, E., Yanagi, H., Kamiya, T., Hirano, M., Hosono, H.

Journal of Solid State Chemistry   179 ( 6 )   1668 - 1673   2006.4

International Journal on the Science and Technology of Condensed Matter Films: Preface Reviewed

H. Hosono, David Ginley, Yuzo Shigesato, Toshio Kamiya

Thin Solid Films   496 ( 1 )   2006.2

Proton conduction in In 3+-doped SnP 2O 7 at intermediate temperatures

Nagao, M., Kamiya, T., Heo, P., Tomita, A., Hibino, T., Sano, M.

Journal of the Electrochemical Society   153 ( 8 )   2006

Interface formation between tris-(8-hydroxyquinoline) aluminum and room temperature stable electride: C12A7:e(-) Reviewed

Ki-Beom Kim, Maiko Kikuchi, Masashi Miyakawa, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

IMID/IDMC 2006: THE 6TH INTERNATIONAL MEETING ON INFORMATION DISPLAY/THE 5TH INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE, DIGEST OF TECHNICAL PAPERS   235 - 238   2006

Transparent conducting properties in layered oxychalcogenides

Kazushige Ueda, Hidenori Hiramatsu, Masahiro Hirano, Toshio Kamiya, Hideo Hosono

Ceramic Transactions   196   467 - 473   2006

High performance FET using transparent amorphous oxide semiconductors as channel layer on plastic substrate Reviewed

Hideo Hosono, Kenji Nomura, Toshio Kamiya

IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2   251 - 252   2005

Bipolar room temperature ferromagnetic semiconductor LaMnOP Reviewed

E Motomitsu, M Hirano, H Yanagi, T Kamiya, H Hosono

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   44 ( 42-45 )   L1344 - L1347   2005

Electrical properties and local structure of n-type conducting amorphous indium sulphide Reviewed

Satoru Narushima, Masanori Hirokl, Kazushige Ueda, Ken-Ichi Shimizu, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

Philosophical Magazine Letters   84 ( 10 )   665 - 671   2004.10

Single-atomic-layered quantum wells built in wide-gap semiconductors LnCuOCh (Ln = lanthanide, Ch = chalcogen) Reviewed

Kazushige Ueda, Hidenori Hiramatsu, Hiromichi Ohta, Masahiro Hirano, Toshio Kamiya, Hideo Hosono

Physical Review B - Condensed Matter and Materials Physics   69 ( 15 )   1 - 155305   2004.4

The role of high-injection effects on the transient ion beam induced current response of high-speed photodetectors

Laird, JS, Hirao, T., Onoda, S., Kamiya, T.

Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms   219   2004

Photoemission spectroscopic studies on oxide/SiC interfaces formed by dry and pyrogenic oxidation

Hijikata, Y., Yaguchi, H., Ishida, Y., Yoshikawa, M., Kamiya, T., Yoshida, S., Madar, R., Camassel, J.

Silicon Carbide and Related Materials 2003, Prts 1 and 2   457-460   2004

Electron transport in InGaO3(ZnO)(m) (m = integer) studied using single-crystalline thin films and transparent MISFETs

K Nomura, H Ohta, K Ueda, T Kamiya, M Hirano, H Hosono

THIN SOLID FILMS   445 ( 2 )   322 - 326   2003.12

High-Density Electron Anions in a Nanoporous Single Crystal: [Ca24Al28O64]4+(4e-). Reviewed

Satoru Matsuishi, Yoshitake Toda, Masashi Miyakawa, Katsuro Hayashi, Toshio Kamiya, Masahiro Hirano, Isao Tanaka, Hideo Hosono

ChemInform   34 ( 44 )   2003.11

N-channel MOSFETs fabricated on homoepitaxy-grown 3C-SiC films

Lee, KK, Ishida, Y., Ohshima, T., Kojima, K., Tanaka, Y., Takahashi, T., Okumura, H., Arai, K., Kamiya, T.

Ieee Electron Device Letters   24 ( 7 )   2003

The electrical characteristics of metal-oxide-semiconductor field effect transistors fabricated on cubic silicon carbide

Ohshima, T., Lee, KK, Ishida, Y., Kojima, K., Tanaka, Y., Takahashi, T., Yoshikawa, M., Okumura, H., Arai, K., Kamiya, T.

Japanese Journal of Applied Physics Part 2-Letters   42 ( 6B )   2003

Thin film fabrication of nano-porous 12CaO center dot 7Al(2)O(3) crystal and its conversion into transparent conductive films by light illumination

Toda, Y., Miyakawa, M., Hayashi, K., Kamiya, T., Hirano, M., Hosono, H.

Thin Solid Films   445 ( 2 )   2003

Observation of single-ion induced charge collection in diode by a heavy ion microbeam system

Kamiya, T., Oikawa, M., Ohshima, T., Hirao, T., Lee, KK, Onoda, S., Laird, JS

Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms   210   2003

透明酸化物の電子構造概論

シーエムシー出版  2006 

透明金属が拓く驚異の世界 不可能に挑むナノテクノロジーの錬金術

ソフトバンク クリエイティブ株式会社  2006 

p型アモルファス酸化物半導体と室温で形成したpn接合ダイオード 「透明酸化物機能材料とその応用」

2006 

自然超格子構造をもつ透明酸化物半導体の単結晶薄膜成長と透明トランジスタへの応用 「材料開発のための顕微鏡法と応用写真集」

日本金属学会  2006 

2.2 電子状態の理解はセラミックスの研究にどう役立つか ～酸化物半導体のバンドラインアップを例として～

社団法人 日本セラミックス協会  2006 

単一電子デバイス 実験化学講座 第5版 28巻 ナノテクノロジーの化学

日本化学会編、丸善株式会社  2005 

Chap. 4 Ceramics, in Hartree-Fock-Slater Method for Materials Science -The DV-X Alpha Method for Design and Characterization of Materials- (Eds. Hirohiko Adachi, Takeshi Mukoyama, Jun Kawai)

Springer  2005 

Chap. 4 Ceramics, in Hartree-Fock-Slater Method for Materials Science -The DV-X Alpha Method for Design and Characterization of Materials- (Eds. Hirohiko Adachi, Takeshi Mukoyama, Jun Kawai)

Springer  2005 

透明ナノポ－ラス結晶：12CaO・7Al_2_O_3_

オプトロニクス 「機能性透明酸化物とオプトエレクトロニクス －ERATO細野透明電子活性プロジェクト成果」  2004 

ナノ構造を利用した透明酸化物の高機能化 －ユビキタス元素を使って新機能に迫る－

セラミックスと建築材料 (応用セラミックス研究所 創立70周年記  2004 

透明酸化物半導体とデバイスへの展開

オプトロニクス「機能性透明酸化物とオプトエレクトロニクス －ERATO細野透明電子活性プロジェクト成果」  2004 

透明酸化物のナノ構造を活用した機能開拓

化学工業  2004 

透明酸化物半導体： 材料設計からデバイス応用まで

セラミックデータブック  2004 

電子状態の理解はセラミックスの研究にどう役立つか ～酸化物半導体のバンドラインナップを例として～

セラミックス  2003 

台湾工業技術研究院に招かれて

東工大クロニクル  2003 

Control of bandgap and network structure in hydrogenated amorphous silicon

Recent Developments in Non-Crystalline Solids (Transworld Research Network, Kerala, India)  2002 

Control of bandgap and network structure in hydrogenated amorphous silicon

Recent Developments in Non-Crystalline Solids (Transworld Research Network, Kerala, India)  2002 

Room temperature single-electron effects in nanostructured silicon

FEMD News Letter  2001 

Room temperature single-electron effects in nanostructured silicon

FEMD News Letter  2001 

Carrier transport across a few grain boudnaries in polycrystallien silicon

FEMD News Letter  2001 

Carrier transport across a few grain boudnaries in polycrystallien silicon

FEMD News Letter  2001 

分光エリプソメトリによる多(微)結晶Si成長のその場観察

学術振興会薄膜第131委員会第189回研究会資料  1997 

強誘電性ペロブスカイト酸化物の材料設計と計算機シミュレーション

セラミックスデータブック1993  1993 

ペロブスカイト強誘電体物性のシミュレーション

セラミックス  1992 

遷移金属元素を発光中心としたアモルファス酸化物半導体蛍光体薄膜の探索

二角勇毅, 渡邉脩人, 井手啓介, KIM J., 片瀬貴義, 平松秀典, 平松秀典, 細野秀雄, 細野秀雄, 神谷利夫, 神谷利夫

セラミックス基礎科学討論会講演要旨集   56th   2018

9th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TOEO9) Preface

David Ginley, Claes-G. Granqvist, George Kiriakidis, Andreas Klein, Toshio Kamiya, Hideo Hosono

THIN SOLID FILMS   614   43 - 43   2016.9

Preface

David Ginley, Claes Granqvist, Toshio Kamiya, Yuzo Shigesato, Hideo Hosono

THIN SOLID FILMS   559   1 - 1   2014.5

The Research Trend and Subject of the Oxide-based Semiconductor TFTs

19 ( 10 )   1 - 8   2013.10

Progress in Oxide Semiconductor Materials and Devices

77   55 - 58   2013.7

透明酸化物半導体がもたらすディスプレイの変革と今後の展望 (特集 "軽い,薄い,透明"なデバイスを実現 世界のデバイス技術者が注目する新材料! 透明酸化物半導体がもたらす変革と研究開発テーマの発掘)

神谷 利夫, 細野 秀雄

研究開発リーダー   10 ( 2 )   19 - 24   2013.5

Doping effects in amorphous oxides (vol 120, pg 447, 2012)

Fuji Funabiki, Toshio Kamiya, Hideo Hosono

JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   120 ( 1408 )   616 - 616   2012.12

Special Issue: 7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (TOEO-7) Preface

David Ginley, Toshio Kamiya, Yuzo Shigesato, Hideo Hosono

THIN SOLID FILMS   520 ( 10 )   3713 - 3713   2012.3

Present status of amorphous In-Ga-Zn-O thin-film transistors

Toshio Kamiya, Kenji Nomura, Hideo Hosono

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS   11 ( 4 )   2010.8

Josephson junction in cobalt-doped BaFe2As2 epitaxial thin films on (La,Sr)(Al,Ta)O-3 bicrystal substrates

Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Hidenori Hiramatsu, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono

APPLIED PHYSICS LETTERS   96 ( 14 )   142507   2010.4

Steady-state photoconductivity of amorphous In-Ga-Zn-O

Dong Hee Lee, Ken-ichi Kawamura, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

THIN SOLID FILMS   518 ( 11 )   3000 - 3003   2010.3

Steady-state photoconductivity of amorphous In-Ga-Zn-O

Dong Hee Lee, Ken-ichi Kawamura, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

THIN SOLID FILMS   518 ( 11 )   3000 - 3003   2010.3

Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer

Tomomasa Shinozaki, Kenji Nomura, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

THIN SOLID FILMS   518 ( 11 )   2996 - 2999   2010.3

Device characteristics improvement of a-In-Ga-Zn-O TFTs by low-temperature annealing

Yutomo Kikuchi, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

THIN SOLID FILMS   518 ( 11 )   3017 - 3021   2010.3

Comprehensive studies on the stabilities of a-In-Ga-Zn-O based thin film transistor by constant current stress

Kenji Nomura, Toshio Kamiya, Yutomo Kikuchi, Masahiro Hirano, Hideo Hosono

THIN SOLID FILMS   518 ( 11 )   3012 - 3016   2010.3

Fabrication of Atomically Flat ScAlMgO4 Epitaxial Buffer Layer and Low-Temperature Growth of High-Mobility ZnO Films

Takayoshi Katase, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

CRYSTAL GROWTH & DESIGN   10 ( 3 )   1084 - 1089   2010.3

Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors

Toshio Kamiya, Kenji Nomura, Hideo Hosono

APPLIED PHYSICS LETTERS   96 ( 12 )   122103   2010.3

Device characteristics improvement of a-In-Ga-Zn-O TFTs by low-temperature annealing

Yutomo Kikuchi, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

THIN SOLID FILMS   518 ( 11 )   3017 - 3021   2010.3

Fabrication and electron transport properties of epitaxial films of electron-doped 12CaO center dot 7Al(2)O(3) and 12SrO center dot 7Al(2)O

Masashi Miyakawa, Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

JOURNAL OF SOLID STATE CHEMISTRY   183 ( 2 )   385 - 391   2010.2

Fabrication and electron transport properties of epitaxial films of electron-doped 12CaO center dot 7Al(2)O(3) and 12SrO center dot 7Al(2)O

Masashi Miyakawa, Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

JOURNAL OF SOLID STATE CHEMISTRY   183 ( 2 )   385 - 391   2010.2

Material characteristics and applications of transparent amorphous oxide semiconductors

Toshio Kamiya, Hideo Hosono

NPG Asia Mater.   2   1522   2010