Binarized Neural Network Accelerator Macro Using Ultralow-Voltage Retention SRAM for Energy Minimum-Point Operation

Yusaku Shiotsu, Satoshi Sugahara

IEEE JOURNAL ON EXPLORATORY SOLID-STATE COMPUTATIONAL DEVICES AND CIRCUITS   8 ( 2 )   134 - 144   2022.12

Ultralow-Voltage Retention SRAM With a Power Gating Cell Architecture Using Header and Footer Power-Switches

Hayato Yoshida, Yusaku Shiotsu, Daiki Kitagata, Shuu'ichirou Yamamoto, Satoshi Sugahara

IEEE OPEN JOURNAL OF CIRCUITS AND SYSTEMS   2   520 - 533   2021

Proactive useless data flush architecture for nonvolatile SRAM using magnetic tunnel junctions

Daiki Kitagata, Shuu'ichirou Yamamoto, Satoshi Sugahara

IEICE ELECTRONICS EXPRESS   17 ( 5 )   2020.3

Design and energy-efficient architectures for nonvolatile static random access memory using magnetic tunnel junctions

Daiki Kitagata, Shuu'ichirou Yamamoto, Satoshi Sugahara

JAPANESE JOURNAL OF APPLIED PHYSICS   58   2019.4

Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAM Reviewed

Yota Takamura, Yusuke Shuto, Shu'uichiro Yamamoto, Hiroshi Funakubo, Minoru Kuribayashi Kurosawa, Shigeki Nakagawa, Satoshi Sugahara

SOLID-STATE ELECTRONICS   128   194 - 199   2017.2

Analysis of spin accumulation in a Si channel using CoFe/MgO/Si spin injectors Reviewed

Taiju Akushichi, Daiki Kitagata, Yusuke Shuto, Satoshi Sugahara

2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM)   204 - 205   2017

Analysis of break-even time for nonvolatile SRAM with SOTB technology Reviewed

Daiki Kitagata, Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara

2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM)   72 - 74   2017

Design and implementation of nonvolatile power-gating SRAM using SOTB technology Reviewed

Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara

ISLPED '16: PROCEEDINGS OF THE 2016 INTERNATIONAL SYMPOSIUM ON LOW POWER ELECTRONICS AND DESIGN   338 - 343   2016.8

Spin-Transistor Technology for Spintronics/CMOS Hybrid Logic Circuits and Systems Reviewed

Satoshi Sugahara, Yusuke Shuto, Shuu'ichirou Yamamoto

Nanomagnetic Devices and Phenomena for Energy-Efficient Computing   65 - 90   2016.2

Energy performance of nonvolatile power-gating SRAM using SOTB technology Reviewed

Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara

2016 46TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC)   87 - 90   2016

Nonvolatile power-gating architecture for SRAM using SOTB technology Reviewed

Y. Shuto, S. Yamamoto, S. Sugahara

2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)   166 - 167   2016

Energy performance of nonvolatile power-gating SRAM using SOTB technology Reviewed

Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara

ESSCIRC CONFERENCE 2016   95 - 98   2016

New power-gating architectures using nonvolatile retention: Comparative study of nonvolatile power-gating (NVPG) and normally-off architectures for SRAM Reviewed

Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara

2016 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS)   136 - 141   2016

Quantitative comparison of power-gating architectures for FinFET-based nonvolatile SRAM using spintronics retention technology Reviewed

Yusuke Shuto, Shuu'Ichirou Yamamoto, Satoshi Sugahara

2015 4th Berkeley Symposium on Energy Efficient Electronic Systems, E3S 2015 - Proceedings   2015.11

Field-effect spin-transistors Reviewed

Satoshi Sugahara, Yota Takamura, Yusuke Shuto, Shuu'ichirou Yamamoto

Handbook of Spintronics   1243 - 1279   2015.9

Spin accumulation in Si channels using CoFe/MgO/Si and CoFe/AlOx/Si tunnel contacts with high quality tunnel barriers prepared by radical-oxygen annealing

Taiju Akushichi, Yota Takamura, Yusuke Shuto, Satoshi Sugahara

Vol. 117 ( No. 17 )   2015.5

Analysis and design of nonlocal spin devices with electric-field-induced spin-transport acceleration Reviewed

Yota Takamura, Taiju Akushichi, Yusuke Shuto, Satoshi Sugahara

JOURNAL OF APPLIED PHYSICS   117 ( 17 )   2015.5

Fabrication and characterization of spin injector using a high-quality B2-ordered-Co2FeSi0.5Al0.5/MgO/Si(100) tunnel contact Reviewed

Yu Kawame, Taiju Akushichi, Yota Takamura, Yusuke Shuto, Satoshi Sugahara

JOURNAL OF APPLIED PHYSICS   117 ( 17 )   2015.5

Structural and magnetic properties of ferromagnetic Fe1-xSix (0.18 <= x <= 0.33) films formed by rapid thermal annealing on silicon-on-insulator substrates Reviewed

R. Nakane, S. Sugahara, M. Tanaka

JOURNAL OF APPLIED PHYSICS   117 ( 13 )   2015.4

Comparative study of power-gating architectures for nonvolatile FinFET-SRAM using spintronics-based retention technology Reviewed

Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara

2015 DESIGN, AUTOMATION & TEST IN EUROPE CONFERENCE & EXHIBITION (DATE)   866 - 871   2015

Fabrication of pseudo-spin-MOSFETs using a multi-project wafer CMOS chip

R. Nakane, Y. Shuto, H. Sukegawa, Z. C. Wen, S. Yamamoto, S. Mitani, M. Tanaka, K. Inomata, S. Sugahara

SOLID-STATE ELECTRONICS   102   52 - 58   2014.12

Analysis of Hanle-effect signals observed in Si-channel spin accumulation devices Reviewed

Yota Takamura, Taiju Akushichi, Adiyudha Sadano, Takao Okishio, Yusuke Shuto, Satoshi Sugahara

JOURNAL OF APPLIED PHYSICS   115 ( 17 )   2014.5

Near-threshold voltage operation of a nonvolatile SRAM cell based on pseudo-spin-FinFET architecture Reviewed

Y. Shuto, S. Yamamoto, S. Sugahara

2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)   2014

0.5V operation and performance of nonvolatile SRAM cell based on pseudo-spin-FinFET architecture Reviewed

Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara

2014 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD)   305 - 308   2014

Comparative study of power-gating architectures for nonvolatile SRAM cells based on spintronics technology Reviewed

Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara

2014 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS)   699 - 702   2014

Nonvolatile flip-flop based on pseudo-spin-transistor architecture and its nonvolatile power-gating applications for low-power CMOS logic Reviewed

Shuu'ichirou Yamamoto, Yusuke Shuto, Satoshi Sugahara

EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS   63 ( 1 )   2013.7

Monolithic integration of pseudo-spin-MOSFETs using a custom CMOS chip fabricated through multi-project wafer service Reviewed

R. Nakane, Y. Shuto, H. Sukegawa, Z. C. Wen, S. Yamamoto, S. Mitani, M. Tanaka, K. Inomata, S. Sugahara

2013 PROCEEDINGS OF THE EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC)   272 - 275   2013

FinFET-based pseudo-spin-transistor: Design and performance Reviewed

Yusuke Shuto, Shuu'Ichirou Yamamoto, Satoshi Sugahara

2013 IEEE International Semiconductor Conference Dresden - Grenoble: Technology, Design, Packaging, Simulation and Test, ISCDG 2013   2013

Nonvolatile Power-Gating Field-Programmable Gate Array Using Nonvolatile Static Random Access Memory and Nonvolatile Flip-Flops Based on Pseudo-Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions Reviewed

Shuu'ichirou Yamamoto, Yusuke Shuto, Satoshi Sugahara

JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 11 )   2012.11

Fabrication of High-Quality Co2FeSi/SiO (x) N (y) /Si(100) Tunnel Contacts Using Radical-Oxynitridation-Formed SiO (x) N (y) Barrier for Si-Based Spin Transistors Reviewed

Yota Takamura, Kengo Hayashi, Yusuke Shuto, Satoshi Sugahara

JOURNAL OF ELECTRONIC MATERIALS   41 ( 5 )   954 - 958   2012.5

Evaluation and Control of Break-Even Time of Nonvolatile Static Random Access Memory Based on Spin-Transistor Architecture with Spin-Transfer-Torque Magnetic Tunnel Junctions Reviewed

Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara

JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 4 )   2012.4

Nonvolatile power-gating FPGA based on pseudo-spin-transistor architecture with spin-transfer-torque MTJs Reviewed

Shuu'ichirou Yamamoto, Yusuke Shuto, Satoshi Sugahara

Materials Research Society Symposium Proceedings   1430   55 - 60   2012

Static noise margin and power-gating efficiency of a new nonvolatile SRAM cell based on pseudo-spin-transistor architecture Reviewed

Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara

2012 4TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW)   2012

Nonvolatile flip-flop using pseudo-spin-transistor architecture and its power-gating applications Reviewed

Shuu'Ichirou Yamamoto, Yusuke Shuto, Satoshi Sugahara

IEEE 2012 International Semiconductor Conference Dresden-Grenoble, ISCDG 2012   17 - 20   2012

Analysis of static noise margin and power-gating efficiency of a new nonvolatile SRAM cell using pseudo-spin-MOSFETs Reviewed

Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara

2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012   2012

Design and performance of pseudo-spin-MOSFETs using nano-CMOS devices Reviewed

Y. Shuto, S. Yamamoto, H. Sukegawa, Z. C. Wen, R. Nakane, S. Mitani, M. Tanaka, K. Inomata, S. Sugahara

Technical Digest - International Electron Devices Meeting, IEDM   29.6.4   2012

Structural and magnetic properties of Ge1-xMnx thin films grown on Ge (001) substrates Reviewed

Shinsuke Yada, Pham Nam Hai, Satoshi Sugahara, Masaaki Tanaka

JOURNAL OF APPLIED PHYSICS   110 ( 7 )   073903   2011.10

Nonvolatile delay flip-flop using spin-transistor architecture with spin transfer torque MTJs for power-gating systems Reviewed

S. Yamamoto, Y. Shuto, S. Sugahara

ELECTRONICS LETTERS   47 ( 18 )   1027 - U1562   2011.9

Epitaxial germanidation of full-Heusler Co2FeGe alloy thin films formed by rapid thermal annealing Reviewed

Yota Takamura, Takuya Sakurai, Ryosho Nakane, Yusuke Shuto, Satoshi Sugahara

JOURNAL OF APPLIED PHYSICS   109 ( 7 )   2011.4

Channel direction, effective field, and temperature dependencies of hole mobility in (110)-oriented Ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistors fabricated by Ge condensation technique Reviewed

Sanjeewa Dissanayake, Yi Zhao, S. Sugahara, Mitsuru Takenaka, Shinichi Takagi

JOURNAL OF APPLIED PHYSICS   109 ( 3 )   2011.2

Analysis and Design of Hanle-Effect Spin Transistors at 300 K Reviewed

Yota Takamura, Satoshi Sugahara

IEEE MAGNETICS LETTERS   2   2011

Nonvolatile delay flip-flop based on spin-transistor architecture and its power-gating applications Reviewed

Shuu'ichirou Yamamoto, Satoshi Sugahara

Japanese Journal of Applied Physics   49 ( 9 )   2010.9

III-V and Group-IV-Based Ferromagnetic Semiconductors for Spintronics Reviewed

M. Tanaka, S. Ohya, S. Yada, Y. Shuto, S. Sugahara

Comprehensive Nanoscience and Technology   1-5   447 - 462   2010.1

A new spin-functional metal-oxide-semiconductor field-effect transistor based on magnetic tunnel junction technology: Pseudo-spin-mosfet

Yusuke Shuto, Yusuke Shuto, Ryosho Nakane, Ryosho Nakane, Wenhong Wang, Wenhong Wang, Hiroaki Sukegawa, Hiroaki Sukegawa, Shuu'ichirou Yamamoto, Shuu'ichirou Yamamoto, Masaaki Tanaka, Masaaki Tanaka, Koichiro Inomata, Koichiro Inomata, Satoshi Sugahara, Satoshi Sugahara

Applied Physics Express   3   2010.1

Nonvolatile Static Random Access Memory Using Resistive Switching Devices: Variable-Transconductance Metal-Oxide-Semiconductor Field-Effect-Transistor Approach Reviewed

Shuu'ichirou Yamamoto, Yusuke Shuto, Satoshi Sugahara

JAPANESE JOURNAL OF APPLIED PHYSICS   49 ( 4 )   2010

High Performance Ultrathin (110)-Oriented Ge-on-Insulator p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Ge Condensation Technique Reviewed

Dissanayake Sanjeewa, Tomiyama Kentaro, Sugahara Satoshi, Takenaka Mitsuru, Takagi Shinichi

APPLIED PHYSICS EXPRESS   3 ( 4 )   2010

Nonvolatile static random access memory based on spin-transistor architecture Reviewed

Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara

JOURNAL OF APPLIED PHYSICS   105 ( 7 )   2009.4

Evaluation of Electron and Hole Mobility at Identical Metal-Oxide-Semiconductor Interfaces by using Metal Source/Drain Ge-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors Reviewed

Morii Kiyohito, Dissanayake Sanjeewa, Tanabe Satoshi, Nakane Ryosho, Takenaka Mitsuru, Sugahara Satoshi, Takagi Shinichi

JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 4 )   2009.4

Nonvolatile SRAM (NV-SRAM) Using Functional MOSFET Merged with Resistive Switching Devices Reviewed

Shuu'ichirou Yamamoto, Yusuke Shuto, Satoshi Sugahara

PROCEEDINGS OF THE IEEE 2009 CUSTOM INTEGRATED CIRCUITS CONFERENCE   531 - +   2009

(110) Ultrathin GOI layers fabricated by Ge condensation method Reviewed

Dissanayake Sanjeewa, Shuto Yusuke, Sugahara Satoshi, Takenaka Mitsuru, Takagi Shinichi

THIN SOLID FILMS   517 ( 1 )   178 - 180   2008.11

Magnetoresistance in MOSFETs with ferromagnetic MnAs source and drain contacts: Spin injection and transport in Si MOS channels Reviewed

R. Nakane, T. Harada, K. Sugiura, S. Sugahara, M. Tanaka

Device Research Conference - Conference Digest, DRC   227 - 228   2008

Magneto-optical and magnetotransport properties of amorphous ferromagnetic semiconductor Ge1-xMnx thin films Reviewed

Shinsuke Yada, Satoshi Sugahara, Masaaki Tanaka

Applied Physics Letters   93 ( 19 )   2008

Epitaxial lateral overgrowth of InGaAs on SiO2 from (111) Si micro channel areas Reviewed

Hoshii Takuya, Deura Momoko, Sugiyama Masakazu, Nakane Ryosho, Sugahara Satoshi, Takenaka Mitsuru, Nakano Yoshiaki, Takagi Shinichi

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9   5 ( 9 )   2733 - +   2008

Schottky barrier MOSFETs with epitaxial ferromagnetic MnAs/Si(001) source and drain: Post-growth annealing and transport characteristics Reviewed

K. Sugiura, R. Nakane, S. Sugahara, M. Tanaka

JOURNAL OF CRYSTAL GROWTH   301   611 - 614   2007.4

Erratum: Schottky barrier height of ferromagnet/ Si(001) junctions (Applied Physics Letters (2006) 89 (072110)) Reviewed

Kuniaki Sugiura, Ryosho Nakane, Satoshi Sugahara, Masaaki Tanaka

Applied Physics Letters   90 ( 2 )   2007

Erratum: High Temperature Ferromagnetism in GaAs-Based Heterostructures with MnδDoping [Phys. Rev. Lett.95, 017201 (2005)] Reviewed

A. M. Nazmul, T. Amemiya, Y. Shuto, S. Sugahara, M. Tanaka

Physical Review Letters   96 ( 14 )   2006.4

Schottky barrier height of ferromagnet/Si(001) junctions Reviewed

Kuniaki Sugiura, Ryosho Nakane, Satoshi Sugahara, Masaaki Tanaka

Applied Physics Letters   89 ( 7 )   2006

Spin devices for integrated circuits

M. Tanaka, S. Sugahara

INTERMAG ASIA 2005: Digests of the IEEE International Magnetics Conference   786   2005

Spin MOSFETs using ferromagnetic Schottky barrier contacts for the source and drain Reviewed

S. Sugahara, M. Tanaka

Device Research Conference - Conference Digest, DRC   2005   211 - 212   2005

Novel reconfigurable logic gates using spin metal-oxide-semiconductor field-effect transistors Reviewed

T Matsuno, S Sugahara, M Tanaka

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   43 ( 9A )   6032 - 6037   2004.9

Spin-filter transistor Reviewed

S Sugahara, M Tanaka

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   43 ( 7A )   L838 - L841   2004.7

A novel spin transistor based on spin-filtering in ferromagnetic barriers: a spin-filter transistor Reviewed

S Sugahara, M Tanaka

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   21 ( 2-4 )   996 - 1001   2004.3

Electrical and Optical Control of Ferromagnetism in III-V Semiconductor Heterostructures at High Temperature (∼100 K) Reviewed

Ahsan M. Nazmul, Shigeki Kobayashi, Satoshi Sugahara, Masaaki Tanaka

Japanese Journal of Applied Physics   43 ( No. 2A )   L233   2004.1

Ferromagnetism and high Curie temperature in semiconductor heterostructures with Mn δ-doped GaAs andp-type selective doping Reviewed

Ahsan M. Nazmul, S. Sugahara, M. Tanaka

Physical Review B   67 ( 24 )   2003.6

Spin-polarized tunneling in fully epitaxial semiconductor-based magnetic tunnel junctions Reviewed

M Tanaka, Y Higo, S Sugahara

JOURNAL OF SUPERCONDUCTIVITY   16 ( 2 )   241 - 248   2003.4

Spin-polarized tunneling in fully epitaxial semiconductor-based magnetic tunnel junctions

M. Tanaka, Y. Higo, S. Sugahara

Journal of Superconductivity and Novel Magnetism   16 ( 2 )   241 - 248   2003

Transport properties of Mn δ-doped GaAs and the effect of selective doping Reviewed

Ahsan M. Nazmul, S. Sugahara, M. Tanaka

Applied Physics Letters   80 ( 17 )   3120   2002.4

Growth characteristics and tunneling magnetoresistance of MnAs/AlAs/MnAs trilayer heterostructures grown on vicinal GaAs(111)B substrates Reviewed

S Sugahara, M Tanaka

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   13 ( 2-4 )   582 - 588   2002.3

Atomic-scale surface morphology of epitaxial ferromagnetic MnAs thin films grown on vicinal GaAs(111)B substrates Reviewed

S Sugahara, M Tanaka

JOURNAL OF APPLIED PHYSICS   89 ( 11 )   6677 - 6679   2001.6

Power-gating performance and architecture of ultralow-voltage-retention SRAM

Yano Hiroki, Shiotsu Yusaku, Sugahara Satoshi, Yamamoto Shuu'ichirou

JSAP Annual Meetings Extended Abstracts   2022.1   2356 - 2356   2022.2

Proposal and performance prediction of a BNN accelerator using ULVR-SRAM

Shiotsu Yusaku, Yamamoto Shuu'ichirou, Sugahara Satoshi

JSAP Annual Meetings Extended Abstracts   2021.2   2648 - 2648   2021.8

Design and analysis of an 8kB ULVR-SRAM macro for near-threshold voltage operations

Hara Takumi, shiotsu yusaku, Yamamoto Shuu'ichirou, sugahara Satoshi

JSAP Annual Meetings Extended Abstracts   2021.2   2647 - 2647   2021.8

Design and analysis of ULVR-SRAM using automatic body-bias control

Hara Takumi, Saito Shuhei, Shiotsu Yusaku, Sugahara Satoshi, Yamamoto Shuu'ichirou

JSAP Annual Meetings Extended Abstracts   2021.2   2646 - 2646   2021.8

Design of ULVR-SRAM cell for near-threshold voltage operation

Hara Takumi, Yamamoto Shuu'ichirou, Shiotsu Yusaku, Sugahara Satoshi, Yoshida Hayato

JSAP Annual Meetings Extended Abstracts   2021.1   2349 - 2349   2021.2

Power-gating performance of caches using ultralow-voltage-retention SRAM

Yoshida Hayato, Shiotsu Yusaku, Sugahara Satoshi, Yamamoto Shuu'ichiro

JSAP Annual Meetings Extended Abstracts   2021.1   2351 - 2351   2021.2

Energy-efficient operation at energy minimum point for ultralow-voltage-retention SRAM

Shiotsu Yusaku, Sugahara Satoshi, Yamamoto Shuu'ichirou

JSAP Annual Meetings Extended Abstracts   2021.1   2350 - 2350   2021.2

Design and analysis of ultralow-voltage-retention Flip-Flop configured with bulk devices

松崎翼, 塩津勇作, 山本修一郎, 菅原聡

応用物理学会秋季学術講演会講演予稿集(CD-ROM)   82nd   2021

Design and analysis of a new ultralow-voltage-retention SRAM cell

Kitagata Daiki, Yoshida Hayato, Shiotsu Yusaku, Yamamoto Shuu'ichirou, Sugahara Satoshi

JSAP Annual Meetings Extended Abstracts   2020.2   1847 - 1847   2020.8

Design and analysis of 8kB SRAM macro using a new ultralow-voltage-retention architecture

Shiotsu Yusaku, Kitagata Daiki, Yamamoto Shuu'ichirou, Sugahara Satoshi

JSAP Annual Meetings Extended Abstracts   2020.2   1848 - 1848   2020.8

Effects of shutdown-allowed time distribution on power reduction efficiency of power gating for retention SRAMs

Yoshida Hayato, Kitagata Daiki, Yamamoto Shuu'ichiro, Sugahara Satoshi

JSAP Annual Meetings Extended Abstracts   2020.2   1849 - 1849   2020.8

Design and analysis of virtually nonvolatile SRAM cell for near-threshold voltage operation.

Hara Takumi, Yoshida Hayato, Kitagata Daiki, Yamamoto Shuu'ichirou, Sugahara Satoshi

JSAP Annual Meetings Extended Abstracts   2020.1   2720 - 2720   2020.2

Proposal of a new virtually nonvolatile SRAM cell

Yoshida Hayato, Kitagata Daiki, Yamamoto Shuu'ichiro, Sugahara Satoshi

JSAP Annual Meetings Extended Abstracts   2020.1   2719 - 2719   2020.2

Power-gating performance of SRAM using various retention techniques

Hara Takumi, Yoshida Hayato, Yamamoto Shuu'ichirou, Sugahara Satoshi, Kitagata Daiki

JSAP Annual Meetings Extended Abstracts   2019.2   3110 - 3110   2019.9

Performance of nonvolatile power-gating using VNR-SRAM and NV-SRAM

Kitagata Daiki, Yoshida Hayato, Yamamoto Shuu'ichirou, Sugahara Satoshi

JSAP Annual Meetings Extended Abstracts   2019.2   3108 - 3108   2019.9

Nonvolatile power-gating using NV-SRAM based on the proactive flash of useless data

Sugahara Satoshi, Yamamoto Shuu'ichirou, Kitagata Daiki

JSAP Annual Meetings Extended Abstracts   2019.2   3111 - 3111   2019.9

Design and analysis of virtually nonvolatile retention SRAM using dual power-switches

Yoshida Hayato, Yamamoto Shuu'ichiro, Kitagata Daiki, Sugahara Satoshi

JSAP Annual Meetings Extended Abstracts   2019.1   2806 - 2806   2019.2

Low-leakage design of a new piezoelectronic transistor and its SRAM application

Shiotsu Yusaku, Funakubo Hiroshi, Yamamoto Shuu'ichiro, Sugahara Satoshi, Kurosawa Minoru Kuribayashi

JSAP Annual Meetings Extended Abstracts   2019.1   2807 - 2807   2019.2

Design and analysis of virtually nonvolatile retention SRAM using dual-mode inverters

Yoshida Hayato, Kitagata Daiki, Yamamoto Shuu'ichiro, Sugahara Satoshi

JSAP Annual Meetings Extended Abstracts   2018.2   2936 - 2936   2018.9

Energy performance of nonvolatile SRAM using hierarchical store-free shutdown architecture

Kitagata Daiki, Sugahara Satoshi, Yamamoto Shuu'ichirou

JSAP Annual Meetings Extended Abstracts   2018.1   3205 - 3205   2018.3

Static-power reduction ability of nonvolatile SRAM with magnetic tunnel junctions

Kitagata Daiki, Yamamoto Shuu'ichirou, Sugahara Satoshi

JSAP Annual Meetings Extended Abstracts   2017.2   2988 - 2988   2017.8

依頼講演 不揮発性SRAMのアーキテクチャとエネルギー性能—Architectures and energy performance of nonvolatile SRAM for core-level nonvolatile power-gating—集積回路

北形 大樹, 周藤 悠介, 菅原 聡, 山本 修一郎

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   117 ( 9 )   51 - 56   2017.4

Design and energy-performance analysis of nonvolatile SRAM

Sugahara Satoshi, Shuto Yusuke, Yamamoto Shuu'ichirou, Kitagata Daiki

JSAP Annual Meetings Extended Abstracts   2017.1   3033 - 3033   2017.3

Quantitative comparison of power-gating architectures for nonvolatile SRAM

Shuto Yusuke, Yamamoto Shuu'ichirou, Sugahara Satoshi

JSAP Annual Meetings Extended Abstracts   2015.2   2750 - 2750   2015.8

FinFET-based pseudo-spin-MOSFET and its nonvolatile SRAM application

Shuto Yusuke, Yamamoto Shuu'ichirou, Sugahara Satoshi

JSAP Annual Meetings Extended Abstracts   2014.1   2859 - 2859   2014.3

ナノCMOS技術を用いた擬似スピンMOSFETおよび不揮発性SRAMセルの性能と設計

山本 修一郎, 菅原 聡, 周藤 悠介

応用物理学会学術講演会講演予稿集   2013.1   2738 - 2738   2013.3

擬似スピンMOSFETを用いた不揮発性デュアルポートSRAMセルの提案とNVPG応用

山本 修一郎, 周藤 悠介, 菅原 聡

応用物理学会学術講演会講演予稿集   2013.1   2739 - 2739   2013.3

Design and performance of pseudo-spin-MOSFETs using nano-CMOS devices

SHUTO Yusuke, YAMAMOTO Shuu'ichirou, SUKEGAWA Hiroaki, Wen ZhenChao, NAKANE Ryosho, MITANI Seiji, TANAKA Masaaki, INOMATA Koichiro, SUGAHARA Satoshi

Technical report of IEICE. SDM   112 ( 421 )   43 - 46   2013.1

擬似スピンMOSFETを用いた不揮発性SRAM:スリープモード動作とその応用

周藤 悠介, 山本 修一郎, 菅原 聡

応用物理学会学術講演会講演予稿集   2012.2   2797 - 2797   2012.8

擬似スピンMOSFETを用いた不揮発性SRAMのスタティックノイズマージンとエネルギー性能の解析—Static noise margin and energy performance analyses of a nonvolatile SRAM cell using pseudo-spin-MOSFET—シリコン材料・デバイス

周藤 悠介, 山本 修一郎, 菅原 聡

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   112 ( 169 )   65 - 70   2012.8

擬似スピンMOSFETを用いた不揮発性SRAM:スタティックノイズマージン評価

周藤 悠介, 山本 修一郎, 菅原 聡

応用物理学会学術講演会講演予稿集   2012.1   3058 - 3058   2012.2

招待講演 CMOS/スピントロニクス融合技術による不揮発性ロジックシステムの展望—Nonvolatile logic systems based on CMOS/spintronics hybrid technology : An overview

山本 修一郎, 菅原 聡, 周藤 悠介

映像情報メディア学会技術報告 = ITE technical report   35 ( 38 )   63 - 70   2011.10

招待講演 CMOS/スピントロニクス融合技術による不揮発性ロジックシステムの展望—Nonvolatile logic systems based on CMOS/spintronics hybrid technology : An overview—磁気記録・情報ストレージ

菅原 聡, 周藤 悠介, 山本 修一郎

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   111 ( 233 )   63 - 70   2011.10

擬似スピンMOSFETを用いた不揮発性SRAM：スリープ時リーク電流削減効果

周藤 悠介, 山本 修一郎, 菅原 聡

応用物理学会学術講演会講演予稿集   2011.2   2451 - 2451   2011.8

CMOS/スピントロニクス融合技術による不揮発性ロジックシステムの展望—Nonvolatile logic systems based on CMOS/spintronics hybrid technology: an overview—特集 CMOSロジックの将来を切り拓く磁気技術

菅原 聡, 周藤 悠介, 山本 修一郎

まぐね = Magnetics Japan   6 ( 1 )   5 - 15   2011

擬似スピンMOSFETを用いた不揮発性SRAM：ストア時の書き込み電流制御

周藤 悠介, 菅原 聡, 山本 修一郎

応用物理学会学術講演会講演予稿集   2010.2   1825 - 1825   2010.8

擬似スピンMOSFETを用いた不揮発性SRAM：セルリーク電流とBETの削減

周藤 悠介, 山本 修一郎, 菅原 聡

応用物理学会学術講演会講演予稿集   2010.2   2696 - 2696   2010.8

不揮発性メモリ素子を用いた不揮発性/ばらつき補償SRAM技術

菅原 聡, 山本 修一郎, 周藤 悠介

応用物理学会学術講演会講演予稿集   2010.2   169 - 169   2010.8

擬似スピンMOSFETを用いた不揮発性SRAMと不揮発性DFFのFPGA応用

山本 修一郎, 周藤 悠介, 菅原 聡

応用物理学会学術講演会講演予稿集   2010.2   1824 - 1824   2010.8

Nonvolatile Static Random Access Memory Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture

Shuu'ichirou Yamamoto, Satoshi Sugahara

JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 4 )   043001/1-7   2009.4

Analysis of L2(1)-ordering in full-Heusler Co2FeSi alloy thin films formed by rapid thermal annealing

Yota Takamura, Ryosho Nakane, Satoshi Sugahara

JOURNAL OF APPLIED PHYSICS   105 ( 7 )   07B109/1-3.   2009.4

Perspective on integrated electronics based on spin-functional MOSFETs

SUGAHARA Satoshi

Oyo Buturi   78 ( 3 )   236 - 241   2009.3

Nonvolatile SRAM architecture using MOSFET-based spin-transistors

Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara

J. Appl. Phys.   105   07C933/1-3   2009

スピン機能MOSFETによる不揮発性ロック 不揮発性パワーゲーティング・ロジックへの応用 不揮発性SRAM/フリップフロップの可能性を検証

菅原聡, 周藤悠介, 山本修一郎

46 - 49   2009

スピン機能CMOSによる不揮発性高機能・高性能ロジック

山本修一郎, 周藤悠介, 菅原聡

スピントロニクスの基礎と材料・応用技術の最前線   ( 27章 )   319 - 330   2009

Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology

Shuu'ichirou Yamamoto, Satoshi Sugahara

Jpn. J. Appl. Phys.   48 ( 4 )   043001-1-7   2009

Nonvolatile SRAM architecture using MOSFET-based spin-transistors

Yusuke Shuto, Shuu'ichirou Yamamoto, Satoshi Sugahara

J. Appl. Phys.   105   07C933/1-3   2009

Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture

S. Yamamoto, S. Sugahara

Jpn. J. Appl. Phys.   48 ( 4 )   043001/1-7   2009

Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology

Shuu'ichirou Yamamoto, Satoshi Sugahara

Jpn. J. Appl. Phys.   48 ( 4 )   043001-1-7   2009

Epitaxial growth and magnetic properties of ferromagnetic semiconductor Ge1-xFex thin films epitaxially grown on Si(001) substrates

Yusuke Shuto, Masaaki Tanaka, Satoshi Sugahara

JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 9 )   7108 - 7112   2008.9

微小領域選択成長によるSi(111)基板上へのInAsピラーの形成

HOSHII TAKUYA, DEURA MOMOKO, SUGIYAMA MASAKAZU, NAKANE RYOSHO, SUGAHARA SATOSHI, TAKENAKA MITSURU, NAKANO YOSHIAKI, TAKAGI SHIN'ICHI

応用物理学関係連合講演会講演予稿集   55th ( 1 )   360   2008.3

微小領域選択MOVPEにおけるSi上InGaAsの横方向成長に対するGa組成の影響

DEURA MOMOKO, HOSHII TAKUYA, SUGIYAMA MASAKAZU, NAKANE RYOSHO, TAKENAKA MITSURU, SUGAHARA SATOSHI, TAKAGI SHIN'ICHI, NAKANO YOSHIAKI

応用物理学関係連合講演会講演予稿集   55th ( 1 )   359   2008.3

微小領域選択MOVPEにより作製したSi(111)面上InGaAsの構造解析

SUGIYAMA MASAKAZU, DEURA MOMOKO, HOSHII TAKUYA, YAMAMOTO TAKEHISA, IKUHARA YUICHI, TAJIRI HIROO, SAKATA OSAMI, KIMURA SHIGERU, NAKANE RYOSHO, TAKENAKA MITSURU, SUGAHARA SATOSHI, TAKAGI SHIN'ICHI, NAKANO YOSHIAKI

応用物理学関係連合講演会講演予稿集   55th ( 1 )   359   2008.3

Carrier-transport-enhanced channel CMOS for improved power consumption and performance

Shinichi Takagi, Toshifurni Irisawa, Tsutomu Tezuka, Toshinori Numata, Shu Nakaharai, Norio Hirashita, Yoshihiko Moriyama, Koji Usuda, Eiji Toyoda, Sanjeewa Dissanayake, Masato Shichijo, Ryosho Nakane, Satoshi Sugahara, Mitsuru Takenaka, Naoharu Sugiyama

IEEE TRANSACTIONS ON ELECTRON DEVICES   55 ( 1 )   21 - 39   2008.1

Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors

Y. Takamura, A. Nishijima, Y. Nagahama, R. Nakane, S. Sugahara

SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES   16 ( 10 )   945 - +   2008

Germanium-based ferromagnetic semiconductor Ge1-xFex for silicon spintronics

Yusuke Shuto, Masaaki Tanaka, Satoshi Sugahara

SIGE, GE, AND RELATED COMPOUNDS 3: MATERIALS, PROCESSING, AND DEVICES   16 ( 10 )   953 - +   2008

微小領域選択成長によるSi上III/V化合物半導体層の形成

出浦 桃子, 星井 拓也, 杉山 正和, 中根 了昌, 菅原 聡, 竹中 充, 高木 信一, 中野 義昭

化学工学会 研究発表講演要旨集   2008 ( 0 )   208 - 208   2008

微小孔を介したSi基板上InGaAs成長におけるモフォロジー向上

HOSHII TAKUYA, DEURA MOMOKO, SUGIYAMA MASAKAZU, NAKANE RYOSUKE, SUGAHARA SATOSHI, TAKENAKA MITSURU, NAKANO YOSHIAKI, TAKAGI SHIN'ICHI

応用物理学会学術講演会講演予稿集   68th ( 1 )   343   2007.9

Si上III/V族化合物半導体の選択MOVPEにおける初期核発生過程の観察と制御

DEURA MOMOKO, SUGIYAMA MASAKAZU, HOSHII TAKUYA, NAKANE RYOSUKE, TAKENAKA MITSURU, SUGAHARA SATOSHI, TAKAGI SHIN'ICHI, NAKANO YOSHIAKI

応用物理学会学術講演会講演予稿集   68th ( 1 )   343   2007.9

Fabrication of III-V on insulator structures on si using microchannel epitaxy with a two-step growth technique

Masato Shichijo, Ryosho Nakane, Satoshi Sugahara, Shinichi Takagi

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 9A )   5930 - 5934   2007.9

Gate dielectric formation and MIS interface characterization on Ge

S. Takagi, T. Maeda, N. Taoka, M. Nishizawa, Y. Morita, K. Ikeda, Y. Yamashita, M. Nishikawa, H. Kumagai, R. Nakane, S. Sugahara, N. Sugiyama

MICROELECTRONIC ENGINEERING   84 ( 9-10 )   2314 - 2319   2007.9

MOS-based spin devices for reconfigurable logic

Masaaki Tanaka, Satoshi Sugahara

IEEE TRANSACTIONS ON ELECTRON DEVICES   54 ( 5 )   961 - 976   2007.5

Effect of tensile strain on gate current of strained-Si n-channel metal-oxide-semiconductor field-effect transistors

Takuya Hoshii, Satoshi Sugahara, Shin-ichi Takagi

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 4B )   2122 - 2126   2007.4

Effect of tensile strain on gate current of strained-Si n-channel metal-oxide-semiconductor field-effect transistors

Takuya Hoshii, Satoshi Sugahara, Shin-ichi Takagi

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 4B )   2122 - 2126   2007.4

Ultrathin Ge-on-insulator metal source/drain P-channel metal-oxide-semiconductor field-effect transistors fabricated by low-temperature molecular-beam epitaxy

Takashi Uehara, Hiroshi Matsubara, Ryosho Nakane, Satoshi Sugahara, Shin-ichi Takagi

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 4B )   2117 - 2121   2007.4

Device structures and carrier transport properties of advanced CMOS using high mobility channels

S. Takagi, T. Tezuka, T. Irisawa, S. Nakaharai, T. Numata, K. Usuda, N. Sugiyama, M. Shichijo, R. Nakane, S. Sugahara

SOLID-STATE ELECTRONICS   51 ( 4 )   526 - 536   2007.4

Si基板上へのInGaAsの成長におけるInPバッファーの有効性

星井拓也, 出浦桃子, 七条真人, 杉山正和, 菅原聡, 中野義昭, 高木信一

応用物理学関係連合講演会講演予稿集   54th ( 1 )   365   2007.3

Structural and magnetic properties of epitaxially grown Ge1-xFex thin films: Fe concentration dependence

Yusuke Shuto, Masaaki Tanaka, Satoshi Sugahara

APPLIED PHYSICS LETTERS   90 ( 13 )   132512/1-3   2007.3

Preparation and characterization of ferromagnetic DO3-phase Fe3Si thin films on silicon-on-insulator substrates for Si-based spin-electronic device applications

Ryosho Nakane, Masaaki Tanaka, Satoshi Sugahara

APPLIED PHYSICS LETTERS   89 ( 19 )   192503/1-3   2006.11

Spin MOSFETs as a basis for spintronics

Satoshi Sugahara, Masaaki Tanaka

ACM Transactions on Storage   2 ( 2 )   197 - 219   2006.5

Magneto-optical properties of group-IV ferromagnetic semiconductor Ge1-xFex grown by low-temperature molecular beam epitaxy

Yusuke Shuto, Masaaki Tanaka, Satoshi Sugahara

JOURNAL OF APPLIED PHYSICS   99 ( 8 )   08D516/1-3   2006.4

Magneto-optical properties of group-IV ferromagnetic semiconductor Ge1-xFex grown by low-temperature molecular beam epitaxy

Yusuke Shuto, Masaaki Tanaka, Satoshi Sugahara

JOURNAL OF APPLIED PHYSICS   99 ( 8 )   08D516/1-3   2006.4

ひずみSi MOSFETのゲートトンネル電流に与えるひずみの効果

星井拓也, 菅原聡, 高木信一

応用物理学関係連合講演会講演予稿集   53rd ( 2 )   940   2006.3

Epitaxial growth and magnetic properties of a new group-IV ferromagnetic semiconductor: Ge1-xFex

Yusuke Shuto, Masaaki Tanaka, Satoshi Sugahara

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 12   3 ( 12 )   4110 - 4114   2006

Perspective on field-effect spin-transistors

Satoshi Sugahara

Physica Status Solidi (C) Current Topics in Solid State Physics   3 ( 12 )   4405 - 4413   2006

Spin MOSFETs As a Basis for Spintronics

S.Sugahara, M.Tanaka

ACM Trans. on Storage   2 ( 2 )   197 - 219   2006

Perspective on field-effect spin-transistors

Satoshi Sugahara

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 12   3 ( 12 )   4405 - 4413   2006

Ge上極薄Siのプラズマ酸化によるSiO₂/Ge MISキャパシタの作製と電気特性

熊谷寛, 七条真人, 石川寛人, 星井拓也, 菅原聡, 高木信一

応用物理学会学術講演会講演予稿集   66th ( 2 )   673   2005.9

Spin metal-oxide-semiconductor field-effect transistors (spin MOSFETs) for integrated spin electronics

S Sugahara

IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS   152 ( 4 )   355 - 365   2005.8

High temperature ferromagnetism in GaAs-based heterostructures with Mn delta doping

AM Nazmul, T Amemiya, Y Shuto, S Sugahara, M Tanaka

PHYSICAL REVIEW LETTERS   95 ( 1 )   2005.7

High temperature ferromagnetism in GaAs-based heterostructures with Mn delta doping

AM Nazmul, T Amemiya, Y Shuto, S Sugahara, M Tanaka

PHYSICAL REVIEW LETTERS   95 ( 1 )   2005.7

A spin metal-oxide-semiconductor field-effect transistor (spin MOSIFET) with a ferromagnetic semiconductor for the channel

S Sugahara, M Tanaka

JOURNAL OF APPLIED PHYSICS   97 ( 10 )   10D503/1-3   2005.5

Growth and magnetic properties of epitaxial MnAs/NiAs/MnAs hetero structures grown on exact GaAs(111)B substrates

R Nakane, J Kondo, MW Yuan, S Sugahara, M Tanaka

JOURNAL OF CRYSTAL GROWTH   278 ( 1-4 )   649 - 654   2005.5

Current-Induced Magnetization Switching in epitaxial MnAs/NiAs/MnAs heterostructures

NAKANE Ryosho, KONDO Jun, SUGAHARA Satoshi, TANAKA Masaaki

2005 ( 12 )   13 - 18   2005.3

スピントランジスタ

菅原聡

電子情報通信学会誌   88 ( 7 )   541 - 550   2005

Spin Metal-Oxide-Semiconductor Field-Effect Transistors (Spin MOSFETs) for Spin-Electronic Integrated Circuits

S. Sugahara

IEE Proc. Circuits, Device-Systems   152 ( 4 )   355 - 365   2005

Precipitation of amorphous ferromagnetic semiconductor phase in epitaxially grown Mn-doped Ge thin films

S Sugahara, KL Lee, S Yada, M Tanaka

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   44 ( 46-49 )   L1426 - L1429   2005

Effect of postgrowth annealing on the morphology and magnetic properties of MnAs thin films grown on GaAs(001) substrates

R Nakane, S Sugahara, M Tanaka

JOURNAL OF APPLIED PHYSICS   95 ( 11 )   6558 - 6561   2004.6

29pXH-4 Control of magnetism in III-V semiconductor heterostructures : Mn-delta doping and p-type selective doping

Tanaka A. M., Nazmul M., Sugahara S.

Meeting abstracts of the Physical Society of Japan   59 ( 1 )   974 - 974   2004.3

A spin metal-oxide-semiconductor field-effect transistor using half-metallic-ferromagnet contacts for the source and drain

S Sugahara, M Tanaka

APPLIED PHYSICS LETTERS   84 ( 13 )   2307 - 2309   2004.3

Control of ferromagnetism in Mn delta-doped GaAs-based semiconductor heterostructures

Ahsan M. Nazmul, S. Kobayashi, S. Sugahara, M. Tanaka

Physica E: Low-Dimensional Systems and Nanostructures   21 ( 2-4 )   937 - 942   2004.3

Growth and magnetoresistance of epitaxial metallic MnAs/NiAs/MnAs trilayers on GaAs (001) substrates

R Nakane, S Sugahara, M Tanaka

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   21 ( 2-4 )   991 - 995   2004.3

Mn-Delta-Doped GaAs and Its Heterostructures : Ferromagnetic Transition Temperature and Control of Magnetic Properties

TANAKA M., NAZMUL A. M., SUGAHARA S.

Journal of Magnetics Society of Japan   28 ( 2 )   66 - 71   2004.2

A spin MOSFET and its applications

SUGAHARA S., TANAKA M.

134   93 - 100   2004.1

Epitaxial growth and magnetic properties of single-crystal MnAs/AlAs/MnAs magnetic tunnel junctions on exact (111)B GaAs substrates: the effect of ultrathin GaAs buffer layers

S Sugahara, M Tanaka

JOURNAL OF CRYSTAL GROWTH   251 ( 1-4 )   317 - 322   2003.4

Tunneling Magneto-Resistance in Semiconductor-Based Epitaxial Ferromagnetic Heterostructures and Its Potential Applications

TANAKA M., HIGO Y., SUGAHARA S.

26   278 - 279   2002.9

Properties of Mn δ-doped-GaAs-based Heterostructures and Their High Ferromagnetic Transition Temperature (-172K)

NAZMUL Ahsan M., SUGAHARA Satoshi, TANAKA Masaaki

2002 ( 28 )   17 - 21   2002.3

Tunneling magnetoresistance in fully epitaxial MnAs/AlAs/MnAs ferromagnetic tunnel junctions grown on vicinal GaAs(111)B substrates

S Sugahara, M Tanaka

APPLIED PHYSICS LETTERS   80 ( 11 )   1969 - 1971   2002.3

Comparative Study on Influence of Subband Structures on Electrical Characteristics of III-V Semiconductor, Ge and Si Channel n-MISFETs

2006 Intl. Conf. on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan,  2006 

Preparation and characterization of full-Heusler Co2FeSi alloy thin films on amorphous insulator films

IEEE International Magnetics Conference (INTERMAG 09)  2009 

スピン注入磁化反転MTJを用いた不揮発性Dフリップフロップ

第56回応用物理学関係連合講演会  2009 

Fabrication of III-V-O-I(III-V on Insulator) Structures on Si Using Micro-Channel Epitaxy with a Two-Step Growth Technique

2006 Intl. Conf. on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan,  2006 

Nonvolatile Logic Technologies for Green IT

The 2009 International Meeting for Future of Electron Devices Kansai (IMFEDK)  2009 

スピントランジスタの研究動向

応用物理学会薄膜・表面物理分科会主催第34回薄膜・表面セミナー, 東京,  2006 

不純物偏析技術を用いたCo_2_FeSiソース/ドレインMOSFETの作製と評価

第56回応用物理学関連連合講演会  2009 

Si(001),Si(110),Si(111)基板上へのMnドープGe薄膜のエピタキシャル成長と磁性

第68回応用物理学会学術講演会  2007 

Spin-functional MOSFETs

Intl. Symp. Silicon Nanodevices in 2030: Prospects by world's leading scientists  2009 

Siキャップ層による強磁性Fe3Si薄膜形成温度の低温化

第68回応用物理学会学術講演会  2007 

Nonvolatile power-gating microprocessor concepts using nonvolatile SRAM and flip-flop

International Symposium on Silicon Nano Devices in 2030  2009 

Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology

52nd Annual Conf. on Magnetism and Magnetic Materials  2007 

Fabrication and characterization of pseudo-spin-MOSFETs

Intl. Conf. Silicon Nano Devices in 2030  2009 

Preparation of full-Heusler alloys on silicon-on-insulator substrates employing rapid thermal annealing

52nd Annual Conference on Magnetism and Magnetic Materials (MMM2007)  2007 

Analysis and design of nonvolatile SRAM using spintronics technology

Non-volatile Memory Technology Symposium 2009 (NVMTS09)  2009 

シリコン・スピンエレクトロニクス ～材料・デバイス・回路～

日本半導体製造装置協会(SEAJ)講演会  2007 

Half-metallic ferromagnet technologies for spin-functional MOSFETs

Intl. Conf. “Silicon Nano Devices in 2030: Prospects by world’s leading scientists  2009 

Effects of Atomic Hydrogen Annealing on Reduction of Leakage Current in Ultrathin Si/Ge/Si-On-Insulator Metal Source/Drain p-Channel MOSFETs

4th International Symposium on Compound Semiconductors (ISCS2007)  2007 

非晶質絶縁膜上へのフルホイスラー合金Co_2_FeSiの形成と評価

第13回半導体スピン工学の基礎と応用(PASPS-13)  2009 

Effect of Annealing on (100) and (110) Oriented pseudo-GOI pMOSFETs Fabricated by Ge Condensation Method

The 5th Intl. Symp. on Control of Semiconductor Interfaces -for Next Generation ULSI Process Integrations- (ISCSI-V)  2007 

スピン機能MOSFETによる新しいエレクトロニクスの展開

応用物理学会シリコンテクノロジー分科会第111回研究集会  2009 

Comparative Study on Influence of Subband Structures on Electrical Characteristics of III-V Semiconductor, Ge and Si Channel n-MISFETs

2006 Intl. Conf. on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan,  2006 

Variability-Tolerant CMOS Gates Using Functional MOSFETs with Resistive Switching Devices

Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials  2009 

Crystallographic and magnetic properties of epitaxially grown Ge1-xFex thin films on Si(001) substrates

52nd Annual Conf. on Magnetism and Magnetic Materials (MMM2007)  2007 

擬似スピンMOSFETを用いた不揮発性SRAMの提案と解析

第13回半導体スピン工学の基礎と応用(PASPS-13)  2009 

Superior MOS Interface Properties of GeO2/Ge Structures Fabricated by Ozone Oxidation

The 5th Intl. Symp. on Control of Semiconductor Interfaces -for Next Generation ULSI Process Integrations- (ISCSI-V)  2007 

Analysis and Design of Nonvolatile SRAM Using MOSFET-Based Spin-Transistors

Intermag 2009  2009 

Si(001)基板上にエピタキシャル成長した強磁性半導体Ge1-xFex薄膜の結晶性と磁性

第68回応用物理学会学術講演会  2007 

Nonvolatile SRAM(NV-SRAM) Using Functional MOSFET Merged with Resistive Switching Devices

Proceedings of IEEE 2009 Custom Integrated Circuits Conference (CICC)  2009 

シリコン・スピンエレクトロニクス -材料・デバイス・回路-

第10回シリサイド系半導体研究会夏の学校, 掛川,  2007 

Germanium-on-insulator (GOI)基板を用いたホイスラー合金の作製とその評価

第68回応用物理学会学術講演会  2007 

強磁性トンネル接合を用いたpseudo spin-MOSFETの提案と理論解析

第68回応用物理学会学術講演会  2007 

Dependence of Layer Thickness on Magnetism and Electrical Conduction in Ferromagnetic (In,Mn)As/GaSb Heterostructures

Narrow Gap Semiconductors 2007  2007 

RTAを用いた非晶質絶縁膜上へのホイスラー合金の形成とその評価

第68回応用物理学会学術講演会  2007 

Preparation and characterization of full-Heusler Co2FeSi alloy thin films on amorphous insulator films

IEEE International Magnetics Conference (INTERMAG 09)  2009 

酸化濃縮法で作成された(110)面GOI基板ヘのアニール効果

第68回応用物理学会学術講演会  2007 

Nonvolatile delay flip-flop using magnetic tunnel junctions with current-induced magnetization switching architecture

IEEE International Magnetics Conference  2009 

微小孔を介したSi 基板上InGaAs 成長におけるモフォロジー向上

第68回応用物理学会学術講演会  2007 

Variability-Tolerant CMOS Gates Using Functional MOSFETs with Resistive Switching Devices

Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials  2009 

pseudo spin-MOSFET/spin-MOSFETの不揮発性SRAM/ラッチ回路への応用

第68回応用物理学会学術講演会  2007 

Nonvolatile Logic Technologies for Green IT

The 2009 International Meeting for Future of Electron Devices Kansai (IMFEDK)  2009 

スピン注入磁化反転MTJを用いた不揮発性SRAM/ラッチ回路

第68回応用物理学会学術講演会  2007 

Structural and Magnetic Properties of Self-Organized Ge1-xMnx Nanocolumns in Epitaxially Grown Mn-Doped Ge Thin Films

4th Intl. School and Conference on Spintronics and Quantum Information Technology (Spintech IV), Maui, Hawaii, USA,  2007 

Gate Dielectric Formation and MIS Interface Characterization on Ge

The 15th Biennial Conf. on Insulatring Films on Semiconductors (INFOS2007), Athene, Greece,  2007 

III-V族化合物半導体n-MOSFETとSi・Ge n-MOSFETの電流駆動力の比較

第54回応用物理学関係連合講演会, 相模原,  2007 

Silicon-on-insulator (SOI) 基板を用いたホイスラー合金の作製とその磁性評価

第54回応用物理学関係連合講演会  2007 

酸化濃縮法により作製された超薄膜(110)面GOI p-MOSFET

第54回応用物理学関係連合講演会, 相模原,  2007 

GOI(Ge-On-Insulater)MOSチャネル中の正孔の速度-電界特性

第54回応用物理学関係連合講演会, 相模原,  2007 

(110) Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Method

The 5th International Conference on SiGe(C) Epitaxy and Heterostructures (ICSI-5), Marseille, France,  2007 

Magneto-Optical and Magneto-Transport Properties of Ferromagnetic Ge1-xFex Thin Films Grown on Si (001) Substrates

4th Intl. School and Conference on Spintronics and Quantum Information Technology (Spintech IV), Maui, Hawaii, USA,  2007 

Perspective on Spin-Transistor Electronics

The 2007 International Meeting for Future of Electron Devices Kansai, Osaka, Japan,  2007 

Perspective on Si-Based Spin-Transistor Electronics

3rd Intl. Nanotechnology Conf. on Communication and Cooperation (INC3), Brussels, Belgium,  2007 

低温コンダクタンス法によるSiO2/Ge MIS界面準位の特性評価

第54回応用物理学関係連合講演会, 相模原,  2007 

Ge上極薄Siのプラズマ酸化によるSiO2/Ge MISキャパシタの電気特性

第54回応用物理学関係連合講演会, 相模原,  2007 

オゾン酸化及び熱酸化により作製されたGe酸化膜/Ge MOS構造の電気特性

第54回応用物理学関係連合講演会, 相模原,  2007 

RTAを用いて作製したフルホイスラー合金Co_2_FeSi、Co_2_FeGeの構造

第55回応用物理学会関連連合講演会  2008 

強磁性半導体Ge_1-x_Fe_x_薄膜におけるアニール効果

第55回応用物理学関係連合講演会  2008 

間接遷移型の障壁層を含むAlGaAs-GaAsヘテロ構造におけるスピン輸送

2008年春季第55回応用物理学関係連合講演会  2008 

酸化濃縮法による(110)面超薄膜GOIpMOSFETデバイス作製

第68回応用物理学会学術講演会  2008 

メタルソース・ドレインnチャネルGOI MOSFETのチャネル電子移動度測定

第55回応用物理学関係連合講演会  2008 

GOI pMOSFETの正孔反転層における移動度の評価

第55回応用物理学関係連合講演会  2008 

スピン注入磁化反転MTJを用いた不揮発性SRAM：通常動作時消費電力の削減

第69回応用物理学会学術講演会  2008 

スピンMOSFET を用いたスピントランジスタ・エレクトロニクス

第69回応用物理学会学術講演会  2008 

Spin transport across depletion region and energy barriers in GaAs-AlGaAs heterostructures

5th Intern’l Conf. on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-V)  2008 

Spin transport across indirect gap barriers in GaAs-AlGaAs heterostructures

The 2008 Intern’l Conf. on Solid State Devices and Materials  2008 

Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors

Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME2008)  2008 

Novel nonvolatile SRAM architecture using MOSFET-based spin-transistors

53rd Annual Conference on Magnetism and Magnetic Materials (MMM2008)  2008 

Analysis and design of nonvolatile SRAM using magnetic tunnel junctions with current-induced magnetization switching technology

53rd Annual Conference on Magnetism and Magnetic Materials (MMM2008)  2008 

Germanium-based ferromagnetic semiconductor Ge1-xFex for silicon spintronics

Hawaii, USA  2008 

Analysis of L2_1_-ordering in full-Heusler Co_2_FeSi alloy thin films formed by rapid thermal annealing

53rd Annual Conference on Magnetism and Magnetic Materials (MMM2008)  2008 

スピン機能MOSFETとその高機能ロジックへの展開－電荷とスピンの融合による新しい高性能・高機能集積回路技術－

JST Innovation Bridge  2008 

スピン注入磁化反転MTJを用いた不揮発性SRAM：仮想接地セルアーキテクチャ

第55回応用物理学会関連連合講演会  2008 

スピン注入磁化反転MTJを用いたpseudo-spin-MOSFETの動作解析

第55回応用物理学関係連合講演会  2008 

スピンMOSFETとその高機能ロジックへの応用

STRJワークショップ2007  2008 

スピン注入磁化反転MTJを用いた不揮発性SRAM：Vhalfの影響

第55回応用物理学会関連連合講演会  2008 

Ge1-xMnx薄膜の成長速度制御による相分離抑止エピタキシャル成長とその磁性

第67回応用物理学会学術講演会, 草津,  2006 

Analysis and design of nonvolatile SRAM using spintronics technology

Non-volatile Memory Technology Symposium 2009 (NVMTS09)  2009 

エピタキシャル強磁性半導体Ge1-xFeｘ薄膜の結晶性および磁性

第53回応用物理学関係連合講演会, 東京,  2006 

Half-metallic ferromagnet technologies for spin-functional MOSFETs

Intl. Conf. “Silicon Nano Devices in 2030: Prospects by world’s leading scientists  2009 

Silicon-on-snsulator (SOI) 基板上の強磁性Fe1-xSiｘ薄膜の磁性と構造評価

第53回応用物理学関係連合講演会, 東京,  2006 

超薄膜(110)面GOI p型MOSFETの電気的特性

平成21年秋季 第70回応用物理学会学術講演会  2009 

強磁性半導体Ge1-xFexにおける結晶構造と強磁性との相関

第67回応用物理学会学術講演会, 草津,  2006 

Spin-functional MOSFETs

Intl. Symp. Silicon Nanodevices in 2030: Prospects by world's leading scientists  2009 

IV族ベース・スピントロニクスデバイスと再構成可能な論理回路

第67回応用物理学会学術講演会, 草津,  2006 

スピン機能MOSFETとその集積回路応用

日本磁気学会第168回研究会第26回スピンエレクトロニクス専門研究会  2009 

ひずみSi MOSFETのゲート トンネル電流に与えるひずみの効果

第53回応用物理学関係連合講演会, 東京,  2006 

Operating analysis of pseudo-spin-MOSFETs using MTJ with current-induced magnetization switching

The 55th Spring Meeting, 2008; The Japan Society of Applied Physics and Related Scieties  2008 

オーミックコンタクト合金を用いたメタル・ソース/ドレインMOSFET

第53回応用物理学関係連合講演会, 東京,  2006 

Nonvolatile power-gating microprocessor concepts using nonvolatile SRAM and flip-flop

International Symposium on Silicon Nano Devices in 2030  2009 

III-V on insulator (III-V-OI)MOSFET応用に向けたSi基板上のIII-V族化合物半導体エピタキシャル成長法

第53回応用物理学関係連合講演会, 東京,  2006 

Fabrication and characterization of pseudo-spin-MOSFETs

Intl. Conf. Silicon Nano Devices in 2030  2009 

III-V族化合物半導体n-MOSFETの電気特性の比較

第53回応用物理学関係連合講演会, 東京,  2006 

Spin transport across depletion region and energy barriers in GaAs-AlGaAs heterostructures

5th Intern’l Conf. on Physics and Applications of Spin-related Phenomena in Semiconductors (PASPS-V)  2008 

低温MBE成長を用いた超薄膜Ge-on-insulator (GOI) p-channel メタルS/D MOSFET

第53回応用物理学関係連合講演会, 東京,  2006 

Spin transport across indirect gap barriers in GaAs-AlGaAs heterostructures

The 2008 Intern’l Conf. on Solid State Devices and Materials  2008 

Analysis and Design of Nonvolatile SRAM Using MOSFET-Based Spin-Transistors

Intermag 2009  2009 

Fabrication of SiO2/Ge MIS Structures by Plasma Oxidation of Ultrathin Si Films Grown on Ge

2006 Intl. Conf. on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan,  2006 

スピントランジスタによる新しいエレクトロニクスの展開

電子情報通信学会シリコン材料・デバイス研究会（SDM) テーマ：低電圧/低消費電力技術、新デバイス・回路とその応用  2009 

Ferromagnetism in Epitaxially Grown Fe-Doped Ge Thin Films on Ge(001) Substrates

17th Intl. Conf. on Magnetism (ICM-2006), Kyoto, Japan,  2006 

Ultra-Thin Ge-on-Insulator(GOI) Metal S/D p-Channel MOSFETs Fabricated by Low Temperature MBE Growth

2006 Intl. Conf. on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan,  2006 

Nonvolatile delay flip-flop using magnetic tunnel junctions with current-induced magnetization switching architecture

IEEE International Magnetics Conference  2009 

Effect of Tensile Strain on Gate and Substrate Currents of Strained-Si n-MOSFETs

2006 Intl. Conf. on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan,  2006 

マイクロプロセッサにおけるエマージングメモリデバイスへの期待

第70回応用物理学会学術講演会  2009 

Structural and Magnetic Properties of Ferromagnetic Semiconductor Ge1-xFex Thin Films Grown by LT-MBE

4th Intl. Conf. on Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-IV), Sendai, Japan,  2006 

Nonvolatile SRAM(NV-SRAM) Using Functional MOSFET Merged with Resistive Switching Devices

Proceedings of IEEE 2009 Custom Integrated Circuits Conference (CICC)  2009 

スピントランジスタ

日本応用磁気学会第１４５回研究会, 東京,  2006 

エマージングメモリデバイスとCMOSの機能融合による新しいコンピュータアーキテクチャの基礎：イントロダクトリートーク

平成21年秋季 第70回応用物理学会学術講演会  2009 

Spin MOSFETs As a Basis for Silicon-Based Spin-Electronics

4th Intl. Conf. on Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-IV), Sendai, Japan,  2006 

Spin-RAM/ReRAM技術を用いた機能MOSFETとその不揮発性SRAM/フリップフロップへの応用

平成21年秋季 第70回応用物理学会学術講演会  2009 

Ferromagnetism in Mn-Doped Amorphous Ge Thin Films

4th Intl. Conf. on Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-IV), Sendai, Japan,  2006 

擬似スピンMOSFETを用いた不揮発性DFF：バルーンDFFとの比較

第70回応用物理学会学術講演会  2009 

Co線源X線回折を用いたフルホイスラー合金の不規則構造評価法の提案

第70回応用物理学会学術講演会  2009 

GeおよびSi基板上への強磁性半導体Ge1-xFex薄膜のエピタキシャル成長

第11回「半導体スピン工学の基礎と応用」研究会, 柏,  2006 

擬似スピンMOSFETを用いた不揮発性SRAM：電源遮断動作消費電力の評価

平成21年秋季 第70回応用物理学会学術講演会  2009 

(110)面SiGe/SOI構造の酸化濃縮による(110)GOI基板の作製

2006 

Structural and Magnetic Properties of Ferromagnetic Semiconductor Ge1-xFex Thin Films Grown by LT-MBE

4th Intl. Conf. on Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-IV), Sendai, Japan,  2006 

スピントランジスタ

応用物理学会スピンエレクトロニクス研究会, 東京,  2005 

スピン素子の現状と今後の展望

電気学会「超微細・低電力デバイス集積技術調査専門委員会」「超高速デバイス・回路技術調査専門委員会」合同調査専門委員会, 東京,  2005 

Spin MOSFETs using ferromagnetic Schottky barrier contacts for the source and drain

63rd Device Research Conf. (DRC), Santa Barbara, USA,  2005 

Spin MOSFETs for Integrated Spin-Electronics

6th Intl Workshop on Future Information Processing Technologies (IWFIPT), Asheville, USA,  2005 

Examination of the Universality of Hole Mobility in Strained-Si p-MOSFETs

2005 Intl. Conf. on Solid State Devices and Materials (SSDM2005), Kobe, Japan,  2005 

Ferromagnetism in Epitaxially Grown Ge1-xMnx Thin Films on Ge(001) substrates

The 3rd Intl. School and Conf. on Spintronics and Quantum Information Technology (Spintech III), Awaji Island, Japan,  2005 

Epitaxial Growth and Magnetic Properties of a New Group IV Ferromagnetic Semiconductor Ge1-xFex

50th Annual Conf. on Magnetism and magnetic materials (MMM2005), San Jose, USA,  2005 

MOSFET Type of Spin Transistor As a Beyond-CMOS Device Using Spin Degrees of Freedom

2005 Intl Conf. on Solid State Devices and Materials (SSDM2005), Kobe, Japan,Rump session: Beyond the Scaling Limit-Innovative Devices and Materials-,  2005 

Formation and Characterization of Ferromagnetic Silicide Fe1-xSix for Si-Based Spintronic Devices

47th Annual TMS Electronic Materials Conf. (EMC), Santa Barbara, USA,  2005 

Current-Induced Magnetization Switching in Epitaxial MnAs/NiAs/MnAs Heterostructures on GaAs Substrates

The 3rd Intl. School and Conf. on Spintronics and Quantum Information Technology (Spintech III), Awaji Island, Japan,  2005 

Spin MOSFETs As a Basis for Integrated Spin Electronics

5th IEEE conf. on Nanotechnology (IEEE-NANO 2005), Nagoya, Japan,  2005 

Fabrication of III-V-O-I(III-V on Insulator) Structures on Si Using Micro-Channel Epitaxy with a Two-Step Growth Technique

2006 Intl. Conf. on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan,  2006 

Preparation of Ferromagnetic Silicide Fe1-xSix Using Silicon-on-Insulator Substrates for Si-Based Spin-Electronic Devices

50th Annual Conf. on Magnetism and magnetic materials (MMM2005), San Jose, USA,  2005 

Ge上極薄膜Siのプラズマ酸化によるSiO2/Ge MISキャパシタの作製と界面特性評価

応用物理学会薄膜・表面物理分科会シリコンテクノロジー分科会共催特別研究会「ゲートスタック研究会―材料・プロセス・評価の物理―」第11回研究会, 三島,  2006 

原子状水素アニールによるSi/Ge/SOI構造メタルS/D pMOSFETの特性改善

第54回応用物理学関係連合講演会, 相模原,  2007 

Si上高品質III/V族化合物半導体薄膜形成に向けたMOVPEバッファ層の初期成長過程観察

第54回応用物理学関係連合講演会, 相模原,  2007 

Epitaxial Growth and Properties of Ferromagnetic Ge1-xFex Thin Films on Si (001)

10th Joint MMM/Intermag Conference, Baltimore, USA,  2007 

Si(001)基板上への強磁性半導体Ge1-xFex薄膜のMBE成長と評価

第54回応用物理学関係連合講演会, 相模原,  2007 

エピタキシャル成長した強磁性Ge1-xMnx薄膜の構造と磁性の評価

第54回応用物理学関係連合講演会, 相模原,  2007 

Si基板上へのInGaAsの成長におけるInPバッファーの有効性

第54回応用物理学関係連合講演会, 相模原,  2007 

シリコン中へのスピン注入とデバイス応用

第54回応用物理学関係連合講演会, 相模原,  2007 

Effect of Annealing on (100) and (110) Oriented pseudo-GOI pMOSFETs Fabricated by Ge Condensation Method

The 5th Intl. Symp. on Control of Semiconductor Interfaces -for Next Generation ULSI Process Integrations- (ISCSI-V)  2007 

Kinetically-Controlled Epitaxial Growth of Ferromagnetic Ge1-xMnx Thin Films

10th Joint MMM/Intermag Conference, Baltimore, USA,  2007 

Crystallographic and magnetic properties of epitaxially grown Ge1-xFex thin films on Si(001) substrates

52nd Annual Conf. on Magnetism and Magnetic Materials (MMM2007)  2007 

Superior MOS Interface Properties of GeO2/Ge Structures Fabricated by Ozone Oxidation

The 5th Intl. Symp. on Control of Semiconductor Interfaces -for Next Generation ULSI Process Integrations- (ISCSI-V)  2007 

Proposal and theoretical analysis of pseudo spin-MOSFETs using MTJ devices

The 68th Autumn Meeting, 2007; The Japan Society of Applied Physics  2007 

Application of pseudo spin-MOSFET/spin-MOSFET for non-volatile SRAM/latch circuits

The 68th Autumn Meeting, 2007; The Japan Society of Applied Physics  2007 

Nonvolatile SRAM and flip-flop architectures using magnetic tunnel junctions with current-induced magnetization switching technology

52nd Annual Conf. on Magnetism and Magnetic Materials  2007 

Preparation of full-Heusler alloys on silicon-on-insulator substrates employing rapid thermal annealing

52nd Annual Conference on Magnetism and Magnetic Materials (MMM2007)  2007 

Non-volatile SRAM/latch circuits using MTJ devices with spin transfer torque magnetization switching

The 68th Autumn Meeting, 2007; The Japan Society of Applied Physics  2007 

Effects of Atomic Hydrogen Annealing on Reduction of Leakage Current in Ultrathin Si/Ge/Si-On-Insulator Metal Source/Drain p-Channel MOSFETs

4th International Symposium on Compound Semiconductors (ISCS2007)  2007 

Structural and Magnetic Properties of Self-Organized Ge1-xMnx Nanocolumns in Epitaxially Grown Mn-Doped Ge Thin Films

4th Intl. School and Conference on Spintronics and Quantum Information Technology (Spintech IV), Maui, Hawaii, USA,  2007 

Mn delta-doped GaAs/p-AlGaAs Heterostructures with High Curie Temperature and Its Control

The 13th International Conference on Molecular Beam Epitaxy (MBE-2004)  2004 

Gate Dielectric Formation and MIS Interface Characterization on Ge

The 15th Biennial Conf. on Insulatring Films on Semiconductors (INFOS2007), Athene, Greece,  2007 

Mn デルタドープGaAsをベースとした半導体へテロ構造における高温強磁性とその制御

第51回春季応用物理学関係連合講演会  2004 

(110) Ultra-thin GOI p-MOSFETs Fabricated by Ge Condensation Method

The 5th International Conference on SiGe(C) Epitaxy and Heterostructures (ICSI-5), Marseille, France,  2007 

Mn delta-doped GaAs/p-AlGaAs Heterostructures with High Curie Temperature and Its Control

The 13th International Conference on Molecular Beam Epitaxy (MBE-2004)  2004 

Magneto-Optical and Magneto-Transport Properties of Ferromagnetic Ge1-xFex Thin Films Grown on Si (001) Substrates

4th Intl. School and Conference on Spintronics and Quantum Information Technology (Spintech IV), Maui, Hawaii, USA,  2007 

External Control of Ferromagnetism in Mn delta-doped GaAs-based Heterostructures

9th Joint MMM-Intermag Conference (MMM-2004)  2004 

Dependence of Layer Thickness on Magnetism and Electrical Conduction in Ferromagnetic (In,Mn)As/GaSb Heterostructures

Narrow Gap Semiconductors 2007  2007 

Current-Induced Magnetization Switching in Epitaxial MnAs/NiAs/MnAs Heterostructures on GaAs Substrates

The 3rd Intl. School and Conf. on Spintronics and Quantum Information Technology (Spintech III), Awaji Island, Japan,  2005 

Analysis and design of nonvolatile SRAM using magnetic tunnel junctions with current-induced magnetization switching technology

53rd Annual Conference on Magnetism and Magnetic Materials (MMM2008)  2008 

Spin MOSFETs As a Basis for Integrated Spin Electronics

5th IEEE conf. on Nanotechnology (IEEE-NANO 2005), Nagoya, Japan,  2005 

Perspective on Spin-Transistor Electronics

The 2007 International Meeting for Future of Electron Devices Kansai, Osaka, Japan,  2007 

Spin MOSFETs for Integrated Spin-Electronics

6th Intl Workshop on Future Information Processing Technologies (IWFIPT), Asheville, USA,  2005 

Perspective on Si-Based Spin-Transistor Electronics

3rd Intl. Nanotechnology Conf. on Communication and Cooperation (INC3), Brussels, Belgium,  2007 

External Control of Ferromagnetism in Mn delta-doped GaAs-based Heterostructures

9th Joint MMM-Intermag Conference (MMM-2004)  2004 

Kinetically-Controlled Epitaxial Growth of Ferromagnetic Ge1-xMnx Thin Films

10th Joint MMM/Intermag Conference, Baltimore, USA,  2007 

Formation and Characterization of Ferromagnetic Silicide Fe1-xSix for Si-Based Spintronic Devices

47th Annual TMS Electronic Materials Conf. (EMC), Santa Barbara, USA,  2005 

Epitaxial Growth and Properties of Ferromagnetic Ge1-xFex Thin Films on Si (001)

10th Joint MMM/Intermag Conference, Baltimore, USA,  2007 

Spin MOSFETs using ferromagnetic Schottky barrier contacts for the source and drain

63rd Device Research Conf. (DRC), Santa Barbara, USA,  2005 

Formation of Si- and Ge-based Full-Heusler Alloy Thin Films Using SOI and GOI Substrates for the Half-Metallic Source and Drain of Spin Transistors

Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME2008)  2008 

MOSFET Type of Spin Transistor As a Beyond-CMOS Device Using Spin Degrees of Freedom

2005 Intl Conf. on Solid State Devices and Materials (SSDM2005), Kobe, Japan,Rump session: Beyond the Scaling Limit-Innovative Devices and Materials-,  2005 

Germanium-based ferromagnetic semiconductor Ge1-xFex for silicon spintronics

Hawaii, USA  2008 

Examination of the Universality of Hole Mobility in Strained-Si p-MOSFETs

2005 Intl. Conf. on Solid State Devices and Materials (SSDM2005), Kobe, Japan,  2005 

スピン機能MOSFETを用いた不揮発性高機能・高性能ロジック

応用物理学会応用電子物性分科会・スピントロニクス研究会例会  2008 

Preparation of Ferromagnetic Silicide Fe1-xSix Using Silicon-on-Insulator Substrates for Si-Based Spin-Electronic Devices

50th Annual Conf. on Magnetism and magnetic materials (MMM2005), San Jose, USA,  2005 

スピン機能MOSFETによるスピントランジスタ・エレクトロニクス

応用物理学会応用電子物性分科会・スピントロニクス研究会共同主催研究会  2008 

Epitaxial Growth and Magnetic Properties of a New Group IV Ferromagnetic Semiconductor Ge1-xFex

50th Annual Conf. on Magnetism and magnetic materials (MMM2005), San Jose, USA,  2005 

Analysis of L2_1_-ordering in full-Heusler Co_2_FeSi alloy thin films formed by rapid thermal annealing

53rd Annual Conference on Magnetism and Magnetic Materials (MMM2008)  2008 

Ferromagnetism in Epitaxially Grown Ge1-xMnx Thin Films on Ge(001) substrates

The 3rd Intl. School and Conf. on Spintronics and Quantum Information Technology (Spintech III), Awaji Island, Japan,  2005 

Novel nonvolatile SRAM architecture using MOSFET-based spin-transistors

53rd Annual Conference on Magnetism and Magnetic Materials (MMM2008)  2008 

CrドープSi薄膜のエピタキシャル成長と磁性評価

第52回応用物理学関係連合講演会, さいたま,  2005 

非晶質絶縁膜上に形成したフルホイスラー合金Co_2_FeSiの結晶構造評価

第69回応用物理学会学術講演会  2008 

ひずみSi p-MOSFETにおける反転層正孔移動度のユニバーサリティ

第52回応用物理学関係連合講演会, さいたま,  2005 

化濃縮法で作成された超薄膜(110)面GOIp-MOSFETの電気的特性

第69回応用物理学会学術講演会  2008 

SiN/Ge MIS キャパシタのCV特性に与える基板タイプの影響

第52回応用物理学関係連合講演会, さいたま,  2005 

シリコンMOS反転層へのスピン注入とスピンMOSFETへの応用

第69回応用物理学会学術講演会  2008 

強磁性金属-Si接合におけるショットキー障壁高さの評価

第52回応用物理学関係連合講演会, さいたま,  2005 

RTAによって作製したフルホイスラー合金Co_2_FeSiの規則度

第69回応用物理学会学術講演会  2008 

Ge系MOSトランジスタへの期待

第52回応用物理学関係連合講演会, さいたま,  2005 

Silicon-on-snsulator (SOI) 基板を用いた強磁性Fe1-xSiｘの作製と磁気特性

第66回応用物理学会学術講演会, 徳島,  2005 

Ge上薄膜Siのプラズマ酸化によるSiO2/Ge MISキャパシタの作製と電気特性

第66回応用物理学会学術講演会, 徳島,  2005 

強磁性Ge1-xMnx薄膜のエピタキシャル成長と磁気特性

第66回応用物理学会学術講演会, 徳島,  2005 

アモルファスGe1-xMnx薄膜の磁性評価

第66回応用物理学会学術講演会, 徳島,  2005 

強磁性Fe1-xSixをショットキー・ソース/ドレインに用いたスピンMOSFETの作製

第52回応用物理学関係連合講演会, さいたま，  2005 

Ge(100)基板上にエピタキシャル成長したMnドープGe薄膜における強磁性の起源

第52回応用物理学関係連合講演会, さいたま,  2005 

Pseudo-spin-MOSFETを用いた不揮発性SRAM：情報ストア動作解析

第56回応用物理学関連連合講演会  2009 

Effect of Tensile Strain on Gate and Substrate Currents of Strained-Si n-MOSFETs

2006 Intl. Conf. on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan,  2006 

極薄絶縁膜上へのフルホイスラー合金Co_2_FeSiの形成とその評価

第56回応用物理学関連連合講演会  2009 

Fabrication of SiO2/Ge MIS Structures by Plasma Oxidation of Ultrathin Si Films Grown on Ge

2006 Intl. Conf. on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan,  2006 

Ultra-Thin Ge-on-Insulator(GOI) Metal S/D p-Channel MOSFETs Fabricated by Low Temperature MBE Growth

2006 Intl. Conf. on Solid State Devices and Materials (SSDM 2006), Yokohama, Japan,  2006 

ノンポーラ型抵抗変化素子のSPICEモデル

第56回応用物理学関連連合講演会  2009 

Ferromagnetism in Mn-Doped Amorphous Ge Thin Films

4th Intl. Conf. on Physics and Application of Spin-Related Phenomena in Semiconductors (PASPS-IV), Sendai, Japan,  2006 

酸化濃縮法を用いたGe PDとGe-on-Insulator MOSFETの集積化の検討

第56回応用物理学関連連合講演会  2009