:Tokyo Institute of Technology Research Center for Quantum Effect Electronics Lecturer

1998年 - 2000年

:東京工業大学 精密工学研究所 助手

1996年 - 1998年

:Tokyo Institute of Technology Precision and Intelligence Laboratory Research Assistant

1996年 - 1998年

電子情報通信学会

LED based optical wireless power transmission for automatic tracking and powering mobile object in real time

Mingzhi Zhao, Tomoyuki Miyamoto

IEEE Access   Vol. 13   2025年2月

Flying a Micro-Drone by Dynamic Charging for Vertical Direction Using Optical Wireless Power Transmission

Tomoya Watamura, Takuo Nagasaka, Yuto Kikuchi, Tomoyuki Miyamoto

MDPI/Energies   Vol. 18   2025年1月

Camera-Based Safety System for Optical Wireless Power Transmission Using Dynamic Safety-Distance

Zuo Chen, Tomoyuki Miyamoto

MDPI/Photonics   Vol. 11   2024年5月

Real-Time Tracking of Photovoltaics by Differential Absorption Imaging in OpticalWireless Power Transmission

Kaoru Asaba, Tomoyuki Miyamoto

MDPI/Photonics   Vol. 11   2024年5月

光ビームを用いた無線給電の基礎と展望

宮本智之

エネルギーレビュー   2024年5月

光無線給電

宮本智之

光技術動向調査報告書   2024年3月

Theory and Technology of Wireless Power Transfer -Inductive, Radio, Optical, and Supersonic Power Transfer-

Naoki Shinohara, Nuno Borges Carvalho, Takehiro Imura, Tomoyuki Miyamoto, Kazuhiro Fujimori, Alessandra Costanzo

2024年3月

Optical Wireless Power Transmission

Tomoyuki Miyamoto

2024年3月

Pros and Cons of Each WPT System

Naoki Shinohara, Nuno Borges Carvalho, Takehiro Imura, Tomoyuki Miyamoto, Kazuhiro Fujimori, Alessandra Costanzo

2024年2月

Introduction

Naoki Shinohara, Nuno Borges Carvalho, Takehiro Imura, Tomoyuki Miyamoto, Kazuhiro Fujimori, Alessandra Costanzo

2024年2月

Wireless Power Transmission by Magnetic Field

Naoki Shinohara, Nuno Borges Carvalho, Takehiro Imura, Tomoyuki Miyamoto, Kazuhiro Fujimori, Alessandra Costanzo

2024年2月

Optical WPT

Tomoyuki Miyamoto

2024年2月

Attitude Determination of Photovoltaic Device by Means of Differential Absorption Imaging

Kaoru Asaba, Tomoyuki Miyamoto

MDPI/Photonics   vol. 11 ( no. 111 )   2023年12月

光無線給電の実現に向けた取り組み―IoT端末、移動体から水中まで

宮本智之

オプトロニクス   2023年10月

Positioning of a photovoltaic device on a real two-dimensional plane in optical wireless power transmission by means of infrared differential absorption imaging

Kaoru Asaba, Tomoyuki Miyamoto

MDPI/Photonics   vol. 10 ( no. 10 )   2023年9月

光ビームを用いる無線給電－小型端末からドローンや電気自動車への移動中給電を目指して

宮本智之

岩谷書店 科学   2023年8月

光無線給電のモビリティ応用＝移動中給電により電動化や自動化の可能性を広げる＝

宮本智之

光アライアンス   2023年8月

Efficient LED-array optical wireless power transmission system for portable power supply and its compact modularization

Mingzhi Zhao, Tomoyuki Miyamoto

MDPI/Photonics   vol. 10 ( no. 7 )   2023年7月

光無線給電システムの構築と応用事例

宮本智之

車載テクノロジー   2023年7月

Solar cell detection and position, attitude determination by differential absorption imaging in optical wireless power transmission

Kaoru Asaba, Tomoyuki Miyamoto

MDPI/Photonics   vol. 10 ( no. 5 )   2023年5月

半導体レーザ

宮本智之

2023年3月

室内機器から移動体まで対応する光無線給電技術

宮本智之, 植田紘司, 張家赫, 鶴田公隆

レーザー研究   vol. 51 ( no. 3 )   2023年3月

フライアイレンズ系を用いた10m-1W級水中光無線給電の実験検証

多井楢葉, 高橋倭, 宮本智之

レーザー研究   vol. 51 ( no. 3 )   2023年3月

光無線給電を用いる走行中給電型電気自動車のCO2排出量推定

須田祐輔, 宮本智之

レーザー研究   vol. 51 ( no. 3 )   2023年3月

Relaxation of beam irradiation accuracy of cooperative optical wireless power transmission in terms of fly eye module with beam confinement mechanism

Kaoru Asaba, Tomoyuki Miyamoto

MDPI/Photonics   vol. 9 ( no. 12 )   2022年12月

Preliminary characterization of robust detection method of Solar Cell Array for optical wireless power transmission with differential absorption image sensing

Kaoru Asaba, Kenta Moriyama, Tomoyuki Miyamoto

MDPI/Photonics   vol. 9 ( no. 11 )   2022年11月

Experimental characterization of high tolerance to beam irradiation conditions of light beam power receiving module for optical wireless power transmission equipped with a fly-eye lens system

Yuha Tai, Tomoyuki Miyamoto

MDPI/Energies   vol. 15 ( no. 19 )   2022年10月

光無線給電のモビリティ応用

宮本智之

オプトロニクス   2022年10月

多様な拡がりが期待される光無線給電

宮本智之

電子情報通信学会誌   2022年9月

1 W high performance LED-array based optical wireless power transmission system for IoT terminals

Mingzhi Zhao, Tomoyuki Miyamoto

MDPI/Photonics   vol. 9 ( no. 8 )   2022年8月

System level requirement analysis of beam alignment and shaping for optical wireless power transmission system by semi–empirical simulation

Kaoru Asaba, Tomoyuki Miyamoto

MDPI/Photonics   vol. 9 ( no. 7 )   2022年6月

光無線給電の特徴と動向

宮本智之

オプトニューズ(OITDA)   2022年5月

まもなく離陸する光無線給電－小型端末，移動体から宇宙応用まで－

宮本智之

日本航空宇宙工業会会報   2022年2月

Optimization for compact and high output LED-based optical wireless power transmission system

Mingzhi Zhao, Tomoyuki Miyamoto

Photonics   vol. 9 ( no. 1 )   2021年12月

Tolerant distance and alignment deviation analysis of LED-based portable optical wireless power transmission system for compact IoT

Yuhuan Zhou, Tomoyuki Miyamoto

IEEJ Transactions on C   vol. 141 ( no. 12 )   2021年12月

光無線給電の動向－小型端末，移動体から水中応用まで－

宮本智之, 李嘉莹

光学   vol. 50 ( no. 11 )   2021年11月

レーザービーム応用−光無線給電

宮本智之

レーザー照明・ディスプレイ産業動向・市場予測レポート2021   2021年6月

Proton implantation in just above active region for improvement of power conversion efficiency of VCSELs

Tomoyuki Miyamoto, Hayato Sakamoto

Electron. Lett.   57 ( 15 )   587 - 588   2021年4月

Optical quality improvement and blue-shift of GaInNAs/GaAs quantum well structures by thermal annealing

T. Kageyama, T. Miyamoto, S. Makino, F. Koyama, K. Iga

2021年1月

400 mW class high output power from LED-array optical wireless power transmission system for compact IoT

Yuhuan Zhou, Tomoyuki Miyamoto

IEICE ELEX   vol. 18 ( no. 2 )   2021年1月

Characterization of visible color filters on optical wireless power transmission system for changing the surface appearance of solar cells

Yu Liu, Tomoyuki Miyamoto

The Journal of Engineering   vol. 2021 ( issue 1 )   2021年1月

次世代モビリティへの光無線給電の可能性＝空飛ぶ自動車にレーザー給電できるのか＝

宮本智之

光アライアンス   2021年1月

面発光型半導体レーザ（VCSEL）

宮本智之

距離･画像センサの基礎と最先端   2020年12月

機器を配線から解放する光無線給電システム

宮本智之

ケミカルエンジニアリング   2020年12月

レーザ光を用いた電力伝送

宮本智之

電気計算   2020年7月

光無線給電への期待 －新たな光応用分野の創出に向けて－

宮本智之

電子情報通信学会論文誌C   vol. J103-C ( no. 5 )   2020年5月

次世代モビリティへの光無線給電の適用可能性

宮本智之

車載テクノロジー   2020年5月

Numerical analysis of power generation characteristics in beam irradiation control of indoor OWPT system

Jing Tang, Kazuhito Matsunaga, Tomoyuki Miyamoto

Optical Review   vol. 27 ( no. 4 )   2020年3月

面発光レーザ

宮本智之

レーザー照明・ディスプレイ産業動向・市場予測レポート2020   2019年12月

Report on OPIC2019 the 1st Optical Wireless and Fiber Power Transmission Conference (OWPT2019)

Tomoyuki Miyamoto, Noriyuki Yokouchi, Masaki Hirota, Takeo Maruyama

2019年8月

Design, simulation, and characterization of fly-eye lens system for optical wireless power transmission

Yuki Katsuta, Tomoyuki Miyamoto

Jpn. J. Appl. Phys.   vol. 58 ( no. SJ )   2019年7月

小型IoT向けのLEDを用いた光無線給電

宮本智之, Yuhuan Zhou

光技術コンタクト   vol. 58 ( no. SJ )   2019年7月

面型発光デバイスの基礎と応用

宮本智之

光学   2019年7月

Rate equation-based numerical analysis of mutual injection for phase locked 2D-VCSEL array using Talbot effect

Taichi Shichijo, Tomoyuki Miyamoto

Japanese Journal of Applied Physics   vol. 58 ( no. SJ )   2019年6月

光無線給電

宮本智之

2019年3月

光無線給電総論－新たな光技術・光産業を期待して－

宮本智之

光アライアンス   2019年2月

VCSELの光無線給電応用

宮本智之

オプトロニクス   2019年1月

面発光レーザーを用いた光無線給電技術

宮本智之

レーザー研究   vol. 46 ( no. 12 )   2018年12月

Design and experimental characterization of optical wireless power transmission using GaAs solar cell and series-connected high-power vertical cavity surface emitting laser array

Yuki Katsuta, Tomoyuki Miyamoto

Japanese Journal of Applied Physics   vol. 57 ( no. 8S2 )   2018年8月

Thermal conductivity reduction effect of thin layer on thermal resistance of vertical cavity surface emitting lasers

Masaki Mimura, Tomoyuki Miyamoto

Jpn. J. Appl. Phys.   vol. 57 ( no. 8S2 )   2018年8月

面発光レーザーが拓く新たな光エレクトロニクス―その多彩な可能性

宮本智之

光アライアンス   2018年7月

Optical wireless power transmission using VCSELs

Tomoyuki Miyamoto

Proc. SPIE   vol. 10682   2018年4月

光無線給電への期待－光技術の応用範囲を拡げられるか－

宮本智之

O plus E   2018年2月

光無線給電が拓く未来

宮本智之

オプトロニクス   2017年6月

Shape control of AlGaAs selective oxidation by intermixing method

Tetsu Gi, Tomoyuki Miyamoto

Japanese Journal of Applied Physics   vol. 55 ( no. 11 )   2016年9月

Quantum well intermixing technique using proton implantation for carrier confinement of vertical-cavity surface-emitting lasers 査読

Shouhei Moriwaki, Minoru Saitou, Tomoyuki Miyamoto

JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 8 )   2016年8月

レーザー照明・ディスプレイ（分担著）

宮本智之

2016年3月

近赤外半導体レーザーの最新動向

宮本智之

日本赤外線学会誌   2016年2月

励起準位を用いた面発光レーザの動作温度範囲拡大

角田健, 宮本智之

レーザー研究   vol. 43 ( no. 7 )   2015年7月

スタンダード工学系のフーリエ解析・ラプラス変換

植之原裕行, 宮本智之

2015年1月

Control of carrier reserving and injection for high-speed semiconductor optical amplifier by using a tunnel injection structure 査読

Mikio Sorimachi, Tomoyuki Miyamoto

JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 1 )   2015年1月

スタンダード工学系のベクトル解析

宮本智之, 植之原裕行

2014年12月

Reflectivity characteristics of high-contrast grating mirrors for a small-sized beam spot

Asako Kikuchi, Tomoyuki Miyamoto

JPN. J. APPL. PHYS.   vol. 53   2014年7月

Fabrication and characterization of VCSELs applying quantum well intermixing using spin-on-glass 査読

Tomohiro Akutsu, Takuya Ushio, Akihiro Matsutani, Tomoyuki Miyamoto

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11   10 ( 11 )   1452 - 1456   2013年

Introduction to the issue on semiconductor lasers

Lester, L.F., Kovanis, V., Sze-Chun Chan, N., Tomoyuki Miyamoto, Sweeney, S.J.

IEEE Journal on Selected Topics in Quantum Electronics   2013年

InAs Quantum Dot Growth on a Thin GaNP Buffer Layer on GaP by Metalorganic Chemical Vapor Deposition 査読

Tomoyuki Miyamoto, Satoru Tanabe, Rei Nishio, Yoshitaka Kobayashi, Ryoichiro Suzuki

JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 8 )   2012年8月

招待講演 NUSOD2011会議報告 (レーザ・量子エレクトロニクス)

比嘉 康貴, 宮本智之

電子情報通信学会技術研究報告 : 信学技報   2011年12月

Well-in-Well Structure for High-Speed Carrier Relaxation into Quantum Wells 査読

Yasutaka Higa, Mikio Sorimachi, Takuya Nishinome, Tomoyuki Miyamoto

JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 8 )   2011年8月

Large Kink Characteristics in Light Output of Tunnel Injection Quantum Well Lasers 査読

Yasutaka Higa, Hiroshi Nakajima, Mikio Sorimachi, Tomoyuki Miyamoto

JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 8 )   2011年8月

光エレクトロニクスとその応用

宮本智之, 共著

Vol.   2011年5月

量子ドットエレクトロニクスの最前線

宮本智之, ほか

Vol.   2011年3月

Multilayer InAs quantum dot with a thin spacer layer partly inserted GaNAs strain compensation layer

Tomoyuki Miyamoto, Ryoichiro Suzuki, Tomoyuki Sengoku

Jpn. J. Appl. Phys.   vol. 50 ( no. 3 )   2011年3月

Multilayer InAs Quantum Dot with GaNAs Strain Compensation Layers Partly Inserted in a Thin Spacer Layer 査読

Tomoyuki Miyamoto, Ryoichiro Suzuki, Tomoyuki Sengoku

JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 3 )   2011年3月

Post-thermal Annealing Effects on Photoluminescence Properties of InAs Quantum Dots on GaNAs Buffer Layer 査読

Tomoyuki Miyamoto, Ryoichiro Suzuki

JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 3 )   2011年3月

The Reduction of Dumping Factor at Well-in-Well Quantum Well Lasers 査読

Yasutaka Higa, Mikio Sorimachi, Takuya Nishinome, Hajime Iwasaki, Akihiro Matsutani, Tomoyuki Miyamoto

2011 IEEE PHOTONICS CONFERENCE (PHO)   680 - 681   2011年

次世代フォトニクスに向けた面発光レーザー技術

宮本智之

月刊 化学工業   2010年10月

レーザーディスプレイ －基礎から応用まで－（分担著）

宮本智之

Vol.   2010年2月

ポスター発表報告

伊東 一良, 馬場 俊彦, 美濃島 薫, 井戸 立身, 早瀬 潤子, 芦原 聡, 宮本智之

学術の動向   2010年

Reduction of Surface Roughness of GaP on Si Substrate using Strained GaInP Interlayer by MOCVD 査読

Rei Nishio, Satoru Tanabe, Ryoichiro Suzuki, Kosuke Nemoto, Tomoyuki Miyamoto

2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)   2010年

Theoretical Analysis of High Speed Semiconductor Optical Amplifier using Tunneling Injection Structure 査読

Kosuke Fujimoto, Tomoyuki Miyamoto, Yasutaka Higa, Hiroshi Nakajima, Fumio Koyama

2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9   2167 - 2168   2008年

Reduction of Spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer 査読

Ryoichiro Suzuki, Tomoyuki Miyamoto, Fumio Koyama

2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4   252 - 253   2007年

Investigation of the polarization characteristics of GaInAsSb-covered InAs quantum dots for application to surface-emitting devices 査読

Tetsuya Matsuura, Tomoyuki Miyamoto, Fumio Koyama

ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS   90 ( 10 )   1 - 8   2007年

Wide modulation bandwidth VCSELs with, side current injection and copper-plated heatsink 査読

Naoki Jogan, Takeshi Uchida, Akihiro Matsutani, Tomoyuki Miyamoto, Hohroh Kobayshi

OFC/NFOEC 2007 - Optical Fiber Communication and the National Fiber Optic Engineers Conference 2007   2007年

Recent advances of VCSEL technologies 査読

Fumio Koyama, Tomoyuki Miyamoto

2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS   420 - 425   2007年

High temperature operation of 1.2 mu m single-transverse-mode highly strained GaInAs/GaAs QW laser 査読

Shigeru Kanazawa, Kazutaka Takeda, Tomoyuki Miyamoto, Fumio Koyama

OPTOELETRONIC MATERIALS AND DEVICES, PTS 1 AND 2   6352   2006年

Polarization characteristics of Sb-introduced Ga(In)As covered InAs quantum dots 査読

Tetsuya Matsuura, Tomoyuki Miyamoto, Fumio Koyama

2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS   345 - +   2006年

理工系のための解く！複素解析

安岡康一, 植之原裕行, 宮本智之

Vol.   2005年4月

レーザーハンドブック

宮本智之

Vol.   2005年4月

High-order transverse mode suppression in VCSELs with temperature-profile control 査読

Takeshi Uchida, Tomoyuki Miyamoto, Takahiro Sakaguchi, Fumio Koyama

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS   2005   467 - 468   2005年

Topologocal characteristics of MBE grown Sb-introduced Ga(In)As covered InAs quantum dots on GaAs 査読

T Matsuura, T Miyamoto, M Ohta, F Koyama

2005 International Conference on Indium Phosphide and Related Materials   351 - 354   2005年

Structure dependence of lasing characteristics of GaInAs/AlGaAs tunnel injection lasers 査読

M Ohta, T Furuhata, T Matsuura, Y Matsui, T Miyamoto, F Koyama

2005 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS   30 - 31   2005年

Electro-thermal wavelength tuning of 1.2 μm GaInAs/GaAs vertical cavity surface emitting laser array 査読

Yasuhiro Uchiyama, Takashi Kondo, Kazutaka Takeda, Akihiro Matsutani, Takeshi Uchida, Tomoyuki Miyamoto, Fumio Koyama

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS   2005   326 - 327   2005年

Wavelength elongation of MBE grown (Ga)InAs QDs by GaInAsSb cover layer 査読

T Matsuura, T Miyamoto, M Ohta, Y Matsui, T Furuhata, F Koyama

2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings   683 - 686   2004年

Highly strained GaInAs/GaAs 1.21 mu m vertical cavity surface emitting laser with single-mode output power of 3mW 査読

Y Kondo, Y Uchiyama, K Takeda, A Matsutani, T Miyamoto, F Koyama

2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2   142 - 143   2004年

Isolator-free, uncooled operation of highly strained 1.1 μm GaInAs/GaAs vertical cavity surface emitting laser for 10 Gb/s single mode fiber data transmission

Takashi Kondo, Masakazu Arai, Akihiro Matsutani, Tomoyuki Miyamoto, Fumio Koyama

OSA Trends in Optics and Photonics Series   95   74 - 76   2004年

1.2 mu m band high-density multiple-wavelength vertical cavity surface emitting laser array 査読

Y Uchiyama, T Kondo, K Takeda, A Matsutani, J Hashizume, U Takeshi, T Miyamoto, F Koyama

2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2   412 - 413   2004年

Thermal annealing effect on self-assembled GaInNAs/GaAs quantum dots grown by chemical beam epitaxy 査読

S Makino, T Miyamoto, M Ohta, T Matsuura, Y Matsui, F Koyama

2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS   460 - 463   2003年

Investigation of well thickness reduction effect of GaInNAs/GaAs quantum well lasers 査読

M Ohta, T Miyamoto, S Makino, T Matsuura, Y Matsui, F Koyama

2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS   204 - 207   2003年

1200 nm highly strained GaInAs/GaAs surface emitting lasers

Koyama F, Miyamoto T, Arai M, Kondo T

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS   1   271 - 272   2002年12月

Effect of quantum well width reduction for GaInNAs/GaAs lasers 査読

M Ohta, T Miyamoto, S Makino, Y Ikenaga, F Koyama

OPTICAL REVIEW   9 ( 6 )   231 - 233   2002年11月

1.2 μm band multiple-wavelength GaInAs/GaAs vertical cavity surface emitting laser array on patterned substrate

Arai M, Kondo T, Azuchi M, Uchida T, Matsutani A, Miyamoto T, Koyama F

Conference Proceedings - International Conference on Indium Phosphide and Related Materials   303 - 306   2002年

Temperature characteristics of 1.16 mu m highly strained GaInAs/GaAs VCSELs. 査読

T Kondo, M Arai, N Nishiyama, M Azuchi, A Matsutani, T Miyamoto, F Koyama, K Iga

VERTICAL-CAVITY SURFACE-EMITTING LASERS VI   4649   39 - 49   2002年

Long- and Short-Wavelength VCSELs

Tomoyuki Miyamoto, Kenichi Iga, Fumio Koyama

Proceedings of SPIE - The International Society for Optical Engineering   83   238 - 260   2002年

Multiple-wavelength GaInAs/GaAs vertical cavity surface emitting laser array with wavelength span of over 100 nm

Masakazu Arai, Takashi Kondo, Akihiro Matsutani, Tomoyuki Miyamoto, Fumio Koyama

Conference Digest - IEEE International Semiconductor Laser Conference   9 - 10   2002年

1.4 mu m GaInNAs/GaAs quantum well laser grown by chemical beam epitaxy 査読

Y Ikenaga, T Miyamoto, S Makino, T Kageyama, M Arai, F Koyama, K Iga

COMPOUND SEMICONDUCTORS 2001   ( 170 )   201 - 205   2002年

Wide wavelength control of highly strained GaInAs/GaAs QWs on patterned substrate for multiwavelength VCSEL array 査読

M Arai, T Kondo, N Nishiyama, M Azuchi, T Miyamoto, F Koyama, K Iga

COMPOUND SEMICONDUCTORS 2001   ( 170 )   677 - 680   2002年

1.1-1.2 μm Multiple-wavelength vertical cavity surface emitting laser array with highly strained GaInAs/GaAs QWs on patterned substrate

Arai M, Kondo T, Nishiyama N, Matsutani A, Miyamoto T, Koyama F, Iga K

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS   2   600 - 601   2001年12月

Highly strained GaInAs-GaAs quantum-well vertical-cavity surface-emitting laser on GaAs (311)B substrate for stable polarization operation

Nishiyama N, Arai M, Shinada S, Azuchi M, Miyamoto T, Koyama F, Iga K

IEEE Journal on Selected Topics in Quantum Electronics   7 ( 2 )   242 - 248   2001年3月

Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1mW 査読

T Kageyama, T Miyamoto, S Makino, Y Ikenaga, N Nishiyama, A Matsutani, F Koyama, K Iga

ELECTRONICS LETTERS   37 ( 4 )   225 - 226   2001年2月

Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1mW 査読

S Makino, T Miyamoto, T Kageyama, Y Ikenaga, N Nishiyama, A Matsutani, F Koyama, K Iga

CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST   608 - 609   2001年

CBE growth of GaInNAs quantum wells and dots for long-wavelength lasers 査読

T Miyamoto, T Kageyama, S Makino, Y Ikenaga, F Koyama, K Iga

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX   4283   24 - 35   2001年

GaInNAs/GaAs quantum dots grown by chemical beam epitaxy 査読

S Makino, T Miyamoto, T Kageyama, N Nishiyama, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   221   561 - 565   2000年12月

1.5 W operation of superluminescent diode with highly strained GaInAs/GaAs quantum well emitting at 1.2 mu m band 査読

F Koyama, D Schlenker, T Miyamoto, Z Chen, T Yamatoya, T Kondo, K Iga

2000 IEEE 17TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST   71 - 72   2000年

A highly strained (lambda=1.12 mu m) GaInAs/GaAs VCSEL on GaAs (311)B substrate exhibiting stable polarization 査読

N Nishiyama, M Arai, S Shinada, T Miyamoto, F Koyama, K Iga

2000 IEEE 17TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST   11 - 12   2000年

Continuous-wave operation of GaInNAs/GaAs lasers grown by chemical beam epitaxy 査読

T Kageyama, T Miyamoto, S Makino, N Nishiyama, F Koyama, K Iga

2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS   447 - 450   2000年

Long wavelength GaInAsP/InP laser with automatically formed tunneling aperture 査読

S Sekiguchi, T Miyamoto, T Kimura, F Koyama, K Iga

2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS   451 - 454   2000年

先端光エレクトロニクスシリーズ7 面発光レーザの基礎と応用

伊賀健一, 小山二三夫編著, 宮本智之

Vol.   1999年6月

Optical quality improvement and blue-shift of GaInNAs/GaAs quantum well structures by thermal annealing 査読

T Kageyama, T Miyamoto, S Makino, F Koyama, K Iga

COMPOUND SEMICONDUCTORS 1998   ( 162 )   639 - 644   1999年

Progress of vertical cavity surface emitting lasers 査読

T Miyamoto, F Koyama, K Iga

COMPOUND SEMICONDUCTORS 1998   ( 162 )   11 - 20   1999年

1.2 mu m GaInAs/GaAs lasers - Are they useful for high capacity single mode fiber datacom ? 査読

F Koyama, D Schlenker, T Miyamoto, ZB Chen, K Iga

PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES   3899   290 - 296   1999年

Quality improvement of GaInNAs/GaAs quantum wells grown by MOCVD using tertiarybutylarsine 査読

Z Pan, T Miyamoto, D Schlenker, F Koyama, K Iga

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS   135 - 138   1998年

InGaN selective MOCVD growth and polycrystalline formation on SiO2-patterned sapphire substrates 査読

A Inoue, T Sakaguchi, Y Moriguchi, M Iwata, T Miyamoto, F Koyama, K Iga

BLUE LASER AND LIGHT EMITTING DIODES II   170 - 173   1998年

Reduction of inelastic scattering effect by introducing strain-compensated superlattice into GaInAs/GaInP multi-quantum barriers 査読

T LOH, T MIYAMOTO, Y KURITA, F KOYAMA, K IGA

SEVENTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS   373 - 376   1995年

Surface emitting lasers grown by CBE

Tomoyuki Miyamoto, Takashi Uchida, Noriyuki Yokouchi, Kenichi Iga

J. Crystal Growth   vol. 136 ( No. )   1994年12月

BAND DISCONTINUITY REDUCTION OF I-GAINASP P-INP FOR IMPROVING 1.55-MU-M GAINASP INP SURFACE-EMITTING LASER PERFORMANCES 査読

K MORI, T MIYAMOTO, N YOKOUCHI, Y INABA, F KOYAMA, K IGA

SIXTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS: CONFERENCE PROCEEDINGS   311 - 314   1994年

CBE法によるGaInAsP/InP歪量子井戸の成長と面発光レーザへの適用に関する研究

宮本智之

1993年3月

Recent progress and hot technologies of vertical-cavity surface emitting lasers

Tomoyuki Miyamoto

37 ( 9 )   649 - 656   2009年

VCSEL技術の現状と課題

宮本智之

レーザー研究   37 ( 9 )   649 - 656   2009年

面発光レーザーの最近の進展

宮本智之

O plus E   31 ( 11 )   1251 - 1257   2009年

High-density InAs quantum dots on GaNAs buffer layer

R. Suzuki, T. Miyamoto, T. Sengoku, F. Koyama

Journal of Crystal Growth   310 ( 23 )   5085 - 5088   2008年11月

High-density InAs quantum dots on GaNAs buffer layer

R. Suzuki, T. Miyamoto, T. Sengoku, F. Koyama

JOURNAL OF CRYSTAL GROWTH   310 ( 23 )   5085 - 5088   2008年11月

Thermal Resistance Reduction of Vertical-Cavity Surface-Emitting Lasers by Thickness-Modulated Distributed Bragg Reflector

Tomoyuki Miyamoto, Tomohiro Nishina, Yoshihiro Kashihara, Syuutarou Ishida, Fumio Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 8 )   6772 - 6776   2008年8月

Reduction of spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer

Ryoichiro Suzuki, Tomoyuki Miyamoto, Tomoyuki Sengoku, Fumio Koyama

APPLIED PHYSICS LETTERS   92 ( 14 )   141110   2008年4月

High-density InAs quantum dots on GaNAs buffer layer

Ryoichiro Suzuki, Tomoyuki Miyamoto, Tomoyuki Sengoku, Fumio Koyama

J. Crystal Growth   310   5085 - 5088   2008年

Reduction of spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer

Ryoichiro Suzuki, Tomoyuki Miyamoto, Tomoyuki Sengoku, Fumio Koyama

Applied Physics Letters   92 ( 14 )   141110   2008年

Theoretical design of carrier injection rate and recombination rate in tunnel injection quantum well lasers

Yasutaka Higa, Tomoyuki Miyamoto, Hiroshi Nakajima, Kosuke Fujimoto, Fumio Koyama

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9   5 ( 9 )   2838 - 2840   2008年

Wavelength widening and performance improvement of vertical-cavity surface emitting lasers

Tomoyuki Miyamoto

91 ( 11 )   987 - 994   2008年

面発光レーザとその波長域拡大・高性能化

宮本智之

電子情報通信学会誌   91 ( 11 )   987 - 994   2008年

トンネル注入量子井戸レーザにおけるキャリア注入確率と再結合確率の解析

比嘉 康貴, 宮本 智之, 中島 浩, 藤本 康介, 小山 二三夫

電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   107 ( 372 )   15 - 20   2007年11月

Polarization control of 1.15μm vertical-cavity surface-emitting lasers using autocloned photonic crystal polarizer

Padullaparthi Babu Dayal, Naoto Kitabayashi, Tomoyuki Miyamoto, Fumio Koyama, T. Kawashima, S. Kawakami

Appl. Phys. Lett.   91 ( 4 )   041110-041110-3   2007年7月

Polarization control of 1.15 mu m vertical-cavity surface-emitting lasers using autocloned photonic crystal polarizer

P. Babu Dayal, N. Kitabayashi, T. Miyamoto, F. Koyama, T. Kawashima, S. Kawakami

APPLIED PHYSICS LETTERS   91 ( 4 )   041110-041110-3   2007年7月

Wavelength elongation and improved emission efficiency of MOCVD-grown InAs quantum dots by GaNAs buffer layer

R. Suzuki, T. Miyamoto, F. Koyama

Journal of Crystal Growth   298   574 - 577   2007年1月

Wavelength elongation and improved emission efficiency of MOCVD-grown InAs quantum dots by GaNAs buffer layer

R. Suzuki, T. Miyamoto, F. Koyama

JOURNAL OF CRYSTAL GROWTH   298 ( No. )   574 - 577   2007年1月

GaInAsSbカバー層を有するInAs量子ドットの面発光型デバイス応用に向けた面内偏光特性の検討

松浦 哲也, 宮本 智之, 小山 二三夫

電子情報通信学会論文誌. C, エレクトロニクス = The transactions of the Institute of Electronics, Information and Communication Engineers. C   J90-C ( 1 )   69 - 75   2007年

GaInAsSbカバー層を有するInAs量子ドットの面発光型デバイス応用に向けた面内偏光特性の検討

松浦 哲也, 宮本 智之, 小山 二三夫

電子情報通信学会論文誌   J90-C ( 1 )   69 - 75   2007年

Wavelength extension effect on lasing characteristics of highly-strained GaInAs/GaAs vertical-cavity surface-emitting lasers with cavity detuning

Kazutaka Takeda, Tomoyuki Miyamoto, Takashi Kondo, Yasuhiro Uchiyama, Naoto Kitabayashi, Takeshi Uchida, Akihiro Matsutani, Fumio Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   45 ( 8B )   6691 - 6696   2006年8月

Short-period GaInAs/InP superlattice for distributed Bragg reflector

Syuutarou Ishida, Tomoyuki Miyamoto, Fumio Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   45 ( 24-28 )   L723 - L725   2006年7月

Photoluminescence characterization of InAs quantum dots on GaNAs buffer layer by metalorganic chemical vapor deposition

Ryoichiro Suzuki, Tomoyuki Miyamoto, Tetsuya Matsuura, Fumio Koyama

Japanese Journal of Applied Physics, Part 2: Letters   45 ( 20-23 )   L585 - L587   2006年6月

Photoluminescence characterization of InAs quantum dots on GaNAs buffer layer by metalorganic chemical vapor deposition

Ryoichiro Suzuki, Tomoyuki Miyamoto, Tetsuya Matsuura, Furnio Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   45 ( 20-23 )   L585 - L587   2006年6月

Topological characteristics of InAs quantum dot with GaInAs cover using Sb surfactant

T Matsuura, T Miyamoto, F Koyama

APPLIED PHYSICS LETTERS   88 ( 18 )   no. 18   2006年5月

Effect of index variation in active layer on transverse mode for vertical-cavity surface-emitting lasers

T Uchida, T Miyamoto, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   45 ( 4A )   2550 - 2555   2006年4月

Structure-dependent lasing characteristics of tunnel injection GaInAs/AlGaAs single-quantum-well lasers

M Ohta, T Furuhata, T Iwasaki, T Matsuura, Y Kashihara, T Miyamoto, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   45 ( 4-7 )   L162 - L164   2006年2月

Transverse mode control in long-monolithic-cavity VCSELs with temperature-profile control

T Uchida, T Miyamoto, T Sakaguchi, F Koyama

ELECTRONICS LETTERS   42 ( 2 )   94 - 96   2006年1月

Photoluminescence characterization of (Ga)InAs quantum dots with GaInAsSb cover layer grown by MBE

T Matsuura, T Miyamoto, M Ohta, F Koyama

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3   3 ( 3 )   516 - +   2006年

InAs quantum dot formed on GaNAs buffer layer by metalorganic chemical vapor deposition

R Suzuki, T Miyamoto, T Matsuura, F Koyama

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3   3 ( 3 )   528 - +   2006年

Topological characteristics of InAs quantum dot with GaInAs cover using Sb surfactant

Tetsuya Matsuura, Tomoyuki Miyamoto, Fumio Koyama

Appl. Phys. Lett.   88 ( no. 18 )   no. 18   2006年

Low threshold GaInAs quantum well lasers grown under low growth rate by solid-source MBE for 1200 nm wavelength range

M Ohta, T Miyamoto, T Matsuura, Y Matsui, T Furuhata, T Iwasaki, Y Kashihara, F Koyama

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3   3 ( 3 )   419 - +   2006年

InAs quantum dot formed on GaNAs buffer layer by metalorganic chemical vapor deposition

R. Suzki, T. Miyamoto, T. Matsuura, F. Koyama

Physica Status Solidi C: Conferences   3 ( 3 )   528 - 531   2006年

Effect of index variation in active layer on transverse mode for vertical-cavity surface-emitting lasers

Takeshi Uchida, Tomoyuki Miyamoto, Fumio Koyama

Jpn. J. Appl. Phys.   45 ( 4A )   2550 - 2555   2006年

1.2μm帯GaInAs/GaAs高密度面発光レーザアレイの波長制御

内山 泰宏, 武田 一隆, 宮本 智之, 小山 二三夫

電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   105 ( 455 )   1 - 4   2005年12月

GaInAs系トンネル注入レーザにおける発振特性のトンネル注入構造依存性(量子効果型光デバイス・光集積化技術, 及び一般)

太田 征孝, 古旗 達也, 松浦 哲也, 松井 康尚, 宮本 智之, 小山 二三夫

電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   105 ( 142 )   1 - 6   2005年6月

PL characteristics of InAs quantum dots with Sb irradiation in growth interruption

T. Matsuura, T. Miyamoto, M. Ohta, Y. Matsui, T. Furuhata, F. Koyama

Journal of Crystal Growth   278 ( 1-4 )   51 - 56   2005年5月

Sb surfactant effect on highly strained GaInAs/GaAs quantum well grown by molecular beam epitaxy

M. Ohta, T. Miyamoto, T. Kageyama, T. Matsuura, Y. Matsui, T. Furuhata, F. Koyama

Journal of Crystal Growth   278 ( 1-4 )   521 - 525   2005年5月

PL characteristics of InAs quantum dots with Sb irradiation in growth interruption

T Matsuura, T Miyamoto, M Ohta, Y Matsui, T Furuhata, F Koyama

JOURNAL OF CRYSTAL GROWTH   278 ( 1-4 )   51 - 56   2005年5月

Sb surfactant effect on highly strained GaInAs/GaAs quantum well grown by molecular beam epitaxy

M Ohta, T Miyamoto, T Kageyama, T Matsuura, Y Matsui, T Furuhata, F Koyama

JOURNAL OF CRYSTAL GROWTH   278 ( 1-4 )   521 - 525   2005年5月

1.2 mu m band GaInAs/GaAs high-density multiple-wavelength vertical cavity surface emitting laser array

Y Uchiyama, T Kondo, K Takeda, A Matsutani, T Uchida, T Miyamoto, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   44 ( 1-7 )   L214 - L215   2005年

1.2μm band GaInAs/GaAs high-density multiple-wavelength vertical cavity surface emitting laser array

Yasuhiro Uchiyama, Takashi Kondo, Kuzutaka Takeda, Akihiro Matsutani, Takeshi Uchida, Tomoyuki Miyamoto, Fumio Koyama

Jpn. J. Appl. Phys.   44 ( 1-7 )   L214 - L215   2005年

1.2μm band GaInAs/GaAs high-density multiple-wavelength vertical cavity surface emitting laser array

Yasuhiro Uchiyama, Takashi Kondo, Kazutaka Takeda, Akihiro Matsutani, Takeshi Uchida, Tomoyuki Miyamoto, Fumio Koyama

Jpn. J. Appl. Phys.   44 ( 1-7 )   L214 - L215   2005年

Optical quality dependence on growth rate for solid-source molecular beam epitaxy grown highly strained GaInAsSb/GaAs quantum wells

M Ohta, T Miyamoto, T Matsuura, Y Matsui, T Furuhata, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   43 ( 12B )   L1569 - L1571   2004年12月

Optical quality dependence on growth rate for solid-source molecular beam epitaxy grown highly strained GaInAsSb/GaAs quantum wells

M Ohta, T Miyamoto, T Matsuura, Y Matsui, T Furuhata, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   43 ( 12B )   L1569 - L1571   2004年12月

GaAs上長波長帯レｰザのためのGaInAsSb系量子ドットのMBE成長

宮本 智之, 松浦 哲也, 太田 征孝, 松井 康尚, 古旗 達也, 小山 二三夫

電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   104 ( 362 )   45 - 50   2004年10月

Characterization of single-wavelength optically pumped GaInAsP/InP vertical-cavity surface-emitting lasers with dielectric mirrors

J Kinoshita, T Miyamoto, Y Onishi, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   43 ( 8B )   5928 - 5932   2004年8月

Improvement in photoluminescence efficiency of GaInNAs/GaAs quantum wells grown by metalorganic chemical vapor deposition for low threshold 1.3μm range lasers

Masao Kawaguchi, Tomoyuki Miyamoto, FUMIO KOYAMA

Jpn. J. Appl. Phys.   43 ( 8A )   5262 - 5268   2004年8月

Analysis on the compensating thermal lensing effect using a convex mirror in vertical-cavity surface-emitting lasers

T Uchida, T Miyamoto, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   43 ( 8B )   5933 - 5936   2004年8月

Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy

T Kageyama, T Miyamoto, M Ohta, T Matsuura, Y Matsui, T Furuhata, F Koyama

JOURNAL OF APPLIED PHYSICS   96 ( 1 )   44 - 48   2004年7月

Surfactant effect of Sb on GaInAs quantum dots grown by molecular beam epitaxy

T Matsuura, T Miyamoto, T Kageyama, M Ohta, Y Matsui, T Furuhata, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   43 ( 5A )   L605 - L607   2004年5月

P-type doping characteristics of GaInNAs : Be grown by solid source molecular beam epitaxy

T Matsuura, T Miyamoto, S Makino, M Ohta, Y Matsui, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   43 ( 4A )   L433 - L435   2004年4月

GaInNAs intermediate layer for improvement of lasing characteristics of GaInNAs quantum well lasers

M Kawaguchi, T Miyamoto, A Saitoh, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   43 ( 4A )   L453 - L455   2004年4月

Transverse mode control by etch-depth tuning in 1120-nm GaInAs/GaAs photonic crystal

JH Baek, DS Song, IK Hwang, KH Lee, YH Lee, YG Ju, T Kondo, T Miyamoto, F Koyama

OPTICS EXPRESS   12 ( 5 )   859 - 867   2004年3月

Transverse mode control by etch-depth tuning in 1120-nm GaInAs/GaAs photonic crystal

JH Baek, DS Song, IK Hwang, KH Lee, YH Lee, YG Ju, T Kondo, T Miyamoto, F Koyama

OPTICS EXPRESS   12 ( 5 )   859 - 867   2004年3月

Photoluminescence and lasing characteristics of GaInNAs/GaAsP strain-compensated quantum wells

M Kawaguchi, T Miyamoto, A Saitoh, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   43 ( 2B )   L267 - L270   2004年2月

Photoluminescence and lasing characteristics of GaInNAs/GaAsP strain-compensated quantum wells

M Kawaguchi, T Miyamoto, A Saitoh, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   43 ( 2B )   L267 - L270   2004年2月

Isolator-free 10 Gbit/s singlemode fibre data transmission using 1.1 mu m GaInAs/GaAs vertical cavity surface emitting laser

T Kondo, M Arai, A Matsutani, T Miyamoto, F Koyama

ELECTRONICS LETTERS   40 ( 1 )   65 - 66   2004年1月

Isolator-free 10 Gb/s single-mode fiber data transmission using 1.1μm GaInAs/GaAs vertical cavity surface emitting laser

Takashi Kondo, Masakazu Arai, Akihiro Matsutani, Tomoyuki Miyamoto, Fumio Koyama

Electron. Lett.   40 ( 1 )   65 - 66   2004年1月

Elongation of emission wavelength of GaInAsSb-covered (Ga)InAs quantum dots grown by molecular beam epitaxy

T Matsuura, T Miyamoto, T Kageyama, M Ohta, Y Matsui, T Furuhata, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   43 ( 1A-B )   L82 - L84   2004年1月

Analysis on the compensating thermal lensing effect using a convex mirror in vertical-cavity surface-emitting lasers

Takeshi Uchida, Tomoyuki Miyamoto, Fumio Koyama

Jpn. J. Appl. Phys.   43 ( 8B )   5933 - 5936   2004年

Thermal crosstalk evaluation of densely integrated vertical cavity surface emitting laser array

Yasuhiro Uchiyama, Takashi Kondo, Kazutaka Takeda, Akihiro Matsutani, Takeshi Uchida, Tomoyuki Miyamoto, Fumio Koyama

IEICE Electronics Express   1 ( 17 )   545 - 550   2004年

Improvement in photoluminescence efficiency of GaInNAs/GaAs quantum wells grown by metalorganic chemical vapor deposition for low threshold 1.3μm range lasers

Masao Kawaguchi, Tomoyuki Miyamoto, FUMIO KOYAMA

Jpn. J. Appl. Phys.   43 ( 8A )   5262 - 5268   2004年

SC-2-1 面発光レーザの最近の技術動向

宮本 智之, 小山 二三夫

電子情報通信学会ソサイエティ大会講演論文集   2003 ( 1 )   "S - 23"-"S-24"   2003年9月

Multiple-wavelength GaInAs-GaAs vertical cavity surface emitting laser array with extended wavelength span

M Arai, T Kondo, A Onomura, A Matsutani, T Miyamoto, F Koyama

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS   9 ( 5 )   1367 - 1373   2003年9月

Densely integrated multiple-wavelength vertical-cavity surface-emitting laser array

A Onomura, M Arai, T Kondo, A Matsutani, T Miyamoto, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   42 ( 5B )   L529 - L531   2003年5月

Growth characteristics of GaInNAs/GaAs quantum dots by chemical beam epitaxy

S Makino, T Miyamoto, M Ohta, T Kageyama, Y Ikenaga, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   251 ( 1-4 )   372 - 377   2003年4月

Growth characteristics of GaInNAs/GaAs quantum dots by chemical beam epitaxy

S Makino, T Miyamoto, M Ohta, T Kageyama, Y Ikenaga, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   251 ( 1-4 )   372 - 377   2003年4月

Wavelength elongation of GalnNAs lasers beyond 1.3 mu m

T Miyamoto, S Makino, Y Ikenaga, M Ohta, F Koyama

IEE PROCEEDINGS-OPTOELECTRONICS   150 ( 1 )   59 - 63   2003年2月

Wavelength elongation of GaInNAs lasers beyond 1.3μm

Tomoyuki Miyamoto, Sshigeki Makino, Yoshihiko Ikenaga, Masataka Ohota, Fumio Koyama

Proc. IEE   150 ( 1 )   59 - 63   2003年2月

Analysis of Transverse-Mode Control in Vertical-Cavity Surface-Emitting Lasers Using a Convex Mirror

Uchida Takeshi, Miyamoto Tomoyuki

Japanese journal of applied physics. Pt. 1, Regular papers & short notes   42 ( 11 )   6883 - 6886   2003年

Thermal annealing effect on self-assembled GaInNAs/GaAs quantum dots grown by chemical beam epitaxy

S Makino, T Miyamoto, M Ohta, T Matsuura, Y Matsui, F Koyama

2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS   0(c) ( 4 )   1097 - 1100   2003年

Analysis of transverse-mode control in VCSELs using a convex mirror

Takeshi Uchida, Tomoyuki Miyamoto

Jpn. J. Appl. Phys.   42 ( 11 )   6883 - 6886   2003年

Singlemode fibre transmission using 1.2μm band GaInAs/GaAs surface emitting laser

Takashi Kondo, Masakazu Arai, Munechika Azuchi, Takeshi Uchida, Akihiro Matsutani, Tomoyuki Miyamoto, Fumio Koyama

Electron. Lett.   38 ( 16 )   901 - 903   2002年8月

Singlemode fibre transmission using 1.2 mu m band GaInAs/GaAs surface emitting laser

T Kondo, M Arai, M Azuchi, T Uchida, A Matsutani, T Miyamoto, F Koyama

ELECTRONICS LETTERS   38 ( 16 )   901 - 903   2002年8月

Growth of highly strained GaInAs-GaAs quantum wells on patterned substrate and its application for multiple-wavelength vertical-cavity surface-emitting laser array

M Arai, T Kondo, A Matsutani, T Miyamoto, F Koyama

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS   8 ( 4 )   811 - 816   2002年7月

GaInAs-GaInNAs-GaInAs intermediate layer structure for long wavelength lasers

E Gouardes, T Miyamoto, M Kawaguchi, K Kondo, F Koyama, K Iga

IEEE PHOTONICS TECHNOLOGY LETTERS   14 ( 7 )   896 - 898   2002年7月

GaInAs-GaInNAs-GaInAs intermediate layer structure for long wavelength lasers

E Gouardes, T Miyamoto, M Kawaguchi, K Kondo, F Koyama, K Iga

IEEE PHOTONICS TECHNOLOGY LETTERS   14 ( 7 )   896 - 898   2002年7月

Effect of annealing on highly strained GaInAs/GaAs quantum wells

T Kondo, M Arai, M Azuchi, T Uchida, T Miyamoto, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   41 ( 6A )   L612 - L614   2002年6月

Low threshold current density operation of 1.16μm highly strained GaInAs/GaAs vertical cavity surface emitting lasers on (100) GaAs substrate

Takashi Kondo, Masakazu Arai, Munechika Azuchi, Takeshi Uchida, Akihiro Matsutani, Tomoyuki Miyamoto, Fumio Koyama

Jpn. J. Appl. Phys.   41 ( 5B )   L562 - L564   2002年5月

Low threshold current density operation of 1.16 mu m highly strained GaInAs/GaAs vertical cavity surface emitting lasers on (100) GaAs substrate

T Kondo, M Arai, M Azuchi, T Uchida, A Matsutani, T Miyamoto, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   41 ( 5B )   L562 - L564   2002年5月

1.4 mu m GaInNAs/GaAs quantum well laser grown by chemical beam epitaxy

Y Ikenaga, T Miyamoto, S Makino, T Kageyama, M Arai, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   41 ( 2A )   664 - 665   2002年2月

Photoluminescence and lasing characteristics of GaInNAs quantum wells using GaInAs intermediate layers

M Kawaguchi, T Miyamoto, E Gouardes, S Minobe, T Kondo, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   41 ( 2B )   1034 - 1039   2002年2月

Photoluminescence dependence on heterointerface for metalorganic chemical vapor deposition grown GaInNAs/GaAs quantum wells

M Kawaguchi, T Miyamoto, E Gouardes, T Kondo, F Koyama, K Iga

APPLIED PHYSICS LETTERS   80 ( 6 )   962 - 964   2002年2月

Photoluminescence dependence on heterointerface for metalorganic chemical vapor deposition grown GaInNAs/GaAs quantum wells

M Kawaguchi, T Miyamoto, E Gouardes, T Kondo, F Koyama, K Iga

APPLIED PHYSICS LETTERS   80 ( 6 )   962 - 964   2002年2月

Nitrogen composition and growth temperature dependence of growth characteristics for self-assembled GaInNAs/GaAs quantum dots by chemical beam epitaxy

S Makino, T Miyamoto, T Kageyama, Y Ikenaga, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   41 ( 2B )   953 - 957   2002年2月

1.4μm GaInNAs/GaAs quantum well laser grown by chemical beam epitaxy

Yoshihiko Ikenaga, Tomoyuki Miyamoto, Shigeki Makino, Takeo Kageyama, Masakazu Arai, Fumio Koyama, Kenichi Iga

Jpn. J. Appl. Phys.   41 ( 2A )   664 - 665   2002年2月

Temperature characteristics of λ=1.3μm GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy

Takeo Kageyama, Tomoyuki Miyamoto, Shigeki Makino, Yoshihiko Ikenaga, Fumio Koyama, Kenichi Iga

Trans. IEICE   E85C ( 1 )   71 - 78   2002年1月

Temperature characteristics of lambda=1.3 mu m GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy

T Kageyama, T Miyamoto, S Makino, Y Ikenaga, F Koyama, K Iga

IEICE TRANSACTIONS ON ELECTRONICS   E85C ( 1 )   71 - 78   2002年1月

Composition dependence of thermal annealing effect on 1.3 mu m GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy

S Makino, T Miyamoto, T Kageyama, Y Ikenaga, M Arai, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   40 ( 11B )   L1211 - L1213   2001年11月

Composition dependence of thermal annealing effect on 1.3μm range GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy

Shigeki Makino, Tomoyuki Miyamoto, Takeo Kageyama, Yoshihiko Ikenaga, Masakazu Arai, Fumio Koyama, Kenichi Iga

Jpn. J. Appl. Phys.   40 ( 11B )   L1211 - L1213   2001年11月

Tunnel junction for long-wavelength vertical-cavity surface-emitting lasers

S Sekiguchi, T Kimura, G Okazaki, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   40 ( 10 )   5909 - 5913   2001年10月

Tunnel junction for long-wavelength vertical-cavity surface-emitting lasers

S Sekiguchi, T Kimura, G Okazaki, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   40 ( 10 )   5909 - 5913   2001年10月

Proposal of optically pumped tunable surface emitting laser

A Murakami, S Sekiguchi, T Sakaguchi, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   40 ( 9AB )   L935 - L936   2001年9月

Proposal of optically pumped tunable surface emitting laser

A Murakami, S Sekiguchi, T Sakaguchi, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   40 ( 9AB )   L935 - L936   2001年9月

Lasing characteristics of low-threshold GaInNAs lasers grown by metalorganic chemical vapor deposition

M Kawaguchi, T Miyamoto, E Gouardes, D Schlenker, T Kondo, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   40 ( 7B )   L744 - L746   2001年7月

Lasing characteristics of low-threshold GaInNAs lasers grown by metalorganic chemical vapor deposition

M Kawaguchi, T Miyamoto, E Gouardes, D Schlenker, T Kondo, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   40 ( 7B )   L744 - L746   2001年7月

1.12μm polarization controlled highly strained GaInAs vertical-cavity surface-emitting lasers on GaAs (311)B by metal organic chemical vapor deposition

Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Munechika Azuchi, Akihiro Matsutani, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga

Jpn. J. Appl. Phys.   40 ( 5A )   L437 - L439   2001年5月

1.12 mu m polarization controlled highly strained GaInAs vertical-cavity surface-emitting lasers on GaAs(311)B by metal organic chemical vapor deposition

N Nishiyama, M Arai, S Shinada, M Azuchi, A Matsutani, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   40 ( 5A )   L437 - L439   2001年5月

Lasing characteristics of 1.2 mu m highly strained GaInAs/GaAs quantum well lasers

T Kondo, D Schlenker, T Miyamoto, ZB Chen, M Kawaguchi, E Gouardes, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   40 ( 2A )   467 - 471   2001年2月

Lasing characteristics of 1.2μm highly strained GaInAs/GaAs quantum well lasers

Takashi Kondo, Dietmar Schlenker, Tomoyuki Miyamoto, Zhibiao Chen, Masao Kawaguchi, Eric Gouardes, Fumio Koyama, Kenichi Iga

Jpn. J. Appl. Phys.   40 ( 2A )   467 - 471   2001年2月

Critical layer thickness of 1.2-μm highly strained GaInAs/GaAs quantum wells

Dietmar Schlenker, Tomoyuki Miyamoto, Zhibiao Chen, Masao Kawaguchi, Takashi Kondo, Eric Gouardes, Fumio Koyama, Kenichi Iga

J. Crystal Growth   221 ( No. )   503 - 508   2000年12月

Optical quality dependence on growth rate for metalorganic chemical vapor deposition grown GaInNAs/GaAs

M Kawaguchi, T Miyamoto, E Gouardes, D Schlenker, T Kondo, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   39 ( 12A )   L1219 - L1220   2000年12月

Growth and optical properties of highly strained GaInAs/GaAs quantum wells on (311)B GaAs by MOCVD

N Nishiyama, M Arai, S Shinada, T Miyamoto, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   221   530 - 534   2000年12月

Critical layer thickness of 1.2-mu m highly strained GaInAs/GaAs quantum wells

D Schlenker, T Miyamoto, ZB Chen, M Kawaguchi, T Kondo, E Gouardes, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   221   503 - 508   2000年12月

Continuous wave operation of 1.26μm GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition

Shunichi Sato, Nobuhiko Nishiyama, Tomoyuki Miyamoto, Takashi Takahashi, Naoto Jikutani, Masakazu Arai, Akihiro Matsutani, Fumio Koyama, Kenichi Iga

Electron. Lett.   36 ( 24 )   2018 - 2019   2000年11月

Inclusion of strain effect in miscibility gap calculations for III-V semiconductors

D Schlenker, T Miyamoto, ZB Chen, M Kawaguchi, T Kondo, E Gouardes, J Gemmer, C Gemmer, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   39 ( 10 )   5751 - 5757   2000年10月

1.15μm lasing operation of highly strained GaInAs/GaAs on GaAs (311)B substrate with high characteristic temperature (T_0_=210 K)

Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga

Jpn. J. Appl. Phys.   39 ( 10B )   L1046 - L1047   2000年10月

Inclusion of strain effect in miscibility gap calculations for III-V semiconductors

D Schlenker, T Miyamoto, ZB Chen, M Kawaguchi, T Kondo, E Gouardes, J Gemmer, C Gemmer, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   39 ( 10 )   5751 - 5757   2000年10月

Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition

M Kawaguchi, E Gouardes, D Schlenker, T Kondo, T Miyamoto, F Koyama, K Iga

ELECTRONICS LETTERS   36 ( 21 )   1776 - 1777   2000年10月

長波長帯半導体レーザの新しい材料 -面発光レーザへの展開-

宮本 智之, 伊賀 健一

電子情報通信学会誌   83 ( 9 )   688 - 690   2000年9月

Improvement of current injection uniformity and device resistance in long-wavelength vertical-cavity surface-emitting laser using a tunnel junction

S Sekiguchi, T Miyamoto, T Kimura, G Okazaki, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   39 ( 7A )   3997 - 4001   2000年7月

Improvement of current injection uniformity and device resistance in long-wavelength vertical-cavity surface-emitting laser using a tunnel junction

S Sekiguchi, T Miyamoto, T Kimura, G Okazaki, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   39 ( 7A )   3997 - 4001   2000年7月

GaInNAs/GaAs量子井戸レーザの高温レーザ発振特性

影山 健生, 宮本 智之, 牧野 茂樹, 西山 伸彦, 小山 二三夫, 伊賀 健一

電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   100 ( 169 )   17 - 22   2000年6月

GaInAs/GaAs歪量子井戸の波長域拡大と高速光リンク用半導体レーザへの展開

小山 二三夫, シュレンカー ディトマー, 宮本 智之, 陳 誌標, 伊賀 健一

電子情報通信学会技術研究報告. OPE, 光エレクトロニクス   100 ( 95 )   25 - 30   2000年5月

CBE and MOCVD growth of GaInNAs

T Miyamoto, T Kageyama, S Makino, D Schlenker, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   209 ( 2-3 )   339 - 344   2000年2月

Data transmission over single-mode fiber by using 1.2-μm uncooled GaInAs-GaAs laser for Gbit/s local area network

Fumio Koyama, Dietmar Schlenker, Tomoyuki Miyamoto, Zhibiao Chen, Akihiro Matsutani, Takahiro Sakaguchi, Kenichi Iga

IEEE Photon. Technol. Lett.   12 ( 2 )   125 - 127   2000年2月

Data transmission over single-mode fiber by using 1.2-mu m uncooled GaInAs-GaAs laser for Gb/s local area network

F Koyama, D Schlenker, T Miyamoto, Z Chen, A Matsutani, T Sakaguchi, K Iga

IEEE PHOTONICS TECHNOLOGY LETTERS   12 ( 2 )   125 - 127   2000年2月

Optical quality of GaNAs and GaInNAs and its dependence on RF cell condition in chemical beam epitaxy

T Kageyama, T Miyamoto, S Makino, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   209 ( 2-3 )   350 - 354   2000年2月

High-temperature operation up to 170 degrees C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy

T Kageyama, T Miyamoto, S Makino, N Nishiyama, F Koyama, K Iga

IEEE PHOTONICS TECHNOLOGY LETTERS   12 ( 1 )   10 - 12   2000年1月

High-temperature operation up to 170°C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy

Takeo Kageyama, Tomoyuki Miyamoto, Shigeki Makino, Fumio Koyama, Kenichi Iga

IEEE Photon. Technol. Lett.   12 ( 1 )   10 - 12   2000年1月

Growth of highly strained GaInAs/GaAs quantum wells for 1.2μm wavelength lasers

Dietmar Schlenker, Tomoyuki Miyamoto, Zhibiao Chen, Fumio Koyama, Kenichi Iga

J. Crystal Growth   209 ( 1 )   27 - 36   2000年1月

Growth of highly strained GaInAs/GaAs quantum wells for 1.2 mu m wavelength lasers

D Schlenker, T Miyamoto, Z Chen, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   209 ( 1 )   27 - 36   2000年1月

Optical quality of GaNAs and GaInNAs and its dependence on RF cell condition in chemical beam epitaxy

Takeo Kageyama, Tomoyuki Miyamoto, Shigeki Makino, Fumio Koyama, Kenichi Iga

J. Crystal Growth   209 ( 2/3 )   350 - 354   2000年

1.15μm lasing operation of highly strained GaInAs/GaAs on GaAs (311)B substrate with high characteristic temperature (T_{<small>0</small>}=210 K)

Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga

Jpn. J. Appl. Phys.   39 ( 10B )   L1046 - L1047   2000年

Low threshold current density operation of GaInNAs/GaAs quantum well lasers grown by metalorganic chemical vapour deposition

Masao Kawaguchi, Eric Gouardes, Dietmar Schlenker, Takashi Kondo, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga

Electron. Lett.   36 ( 21 )   1776 - 1777   2000年

1.15μm lasing operation of highly strained GaInAs/GaAs on GaAs (311)B substrate with high characteristic temperature (T_0_=210 K)

Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga

Jpn. J. Appl. Phys.   39 ( 10B )   L1046 - L1047   2000年

1.15μm lasing operation of highly strained GaInAs/GaAs on GaAs (311)B substrate with high characteristic temperature (T_{<small>0</small>}=210 K)

Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga

Jpn. J. Appl. Phys.   39 ( 10B )   L1046 - L1047   2000年

Optical quality dependence on growth rate for metalorganic chemical vapor deposition grown GaInNAs/GaAs

Masao Kawaguchi, Tomoyuki Miyamoto, Eric Gouardes, Dietmar Schlenker, Takashi Kondo, Fumio Koyama, Kenichi Iga

Jpn. J. Appl. Phys.   39 ( 12A )   L1219 - L1220   2000年

Continuous wave operation of 1.26μm GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition

Shunichi Sato, Nobuhiko Nishiyama, Tomoyuki Miyamoto, Takashi Takahashi, Naoto Jikutani, Masakazu Arai, Akihiro Matsutani, Fumio Koyama, Kenichi Iga

Electron. Lett.   36 ( 24 )   2018 - 2019   2000年

Growth and optical properties of highly strained GaInAs/GaAs quantum wells on (311)B GaAs by MOCVD

Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga

J. Crystal Growth   221   530 - 534   2000年

Strong enhancement of light extraction efficiency in GaInAsP 2-D-arranged microcolumns

T Baba, K Inoshita, H Tanaka, J Yonekura, M Ariga, A Matsutani, T Miyamoto, F Koyama, K Iga

JOURNAL OF LIGHTWAVE TECHNOLOGY   17 ( 11 )   2113 - 2120   1999年11月

Strong enhancement of light extraction efficiency in GaInAsP 2-D-arranged microcolumns

T Baba, K Inoshita, H Tanaka, J Yonekura, M Ariga, A Matsutani, T Miyamoto, F Koyama, K Iga

JOURNAL OF LIGHTWAVE TECHNOLOGY   17 ( 11 )   2113 - 2120   1999年11月

High temperature characteristics of nearly 1.2 mu m GaInAs/GaAs/AlGaAs lasers

ZB Chen, D Schlenker, T Miyamoto, T Kondo, M Kawaguchi, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   38 ( 10B )   L1178 - L1179   1999年10月

High temperature characteristics of near 1.2μm InGaAs/AlGaAs lasers

Zhibiao Chen, Dietmar Schlenker, Tomoyuki Miyamoto, Takashi Kondo, Masao Kawaguchi, Fumio Koyama, Kenichi Iga

Jpn. J. Appl. Phys.   38 ( 10B )   L1178 - L1179   1999年10月

GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy

KAGEYAMA T., MIYAMOTO T., MAKINO S., NISHIYAMA N., KOYAMA F., IGA K.

Extended abstracts of the ... Conference on Solid State Devices and Materials   1999   298 - 299   1999年9月

Self-aligned current confinement structure using AlAs/InP tunnel junction in GaInAsP/InP semiconductor lasers

S Sekiguchi, T Miyamoto, T Kimura, F Koyama, K Iga

APPLIED PHYSICS LETTERS   75 ( 11 )   1512 - 1514   1999年9月

Self-aligned current confinement structure using AlAs/InP tunnel junction in GaInAsP/InP semiconductor lasers

S Sekiguchi, T Miyamoto, T Kimura, F Koyama, K Iga

APPLIED PHYSICS LETTERS   75 ( 11 )   1512 - 1514   1999年9月

Effect of surface quality on overgrowth of highly strained GaInAs/GaAs quantum wells and improvement by a strained buffer layer

D Schlenker, Z Pan, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   38 ( 9A )   5023 - 5027   1999年9月

Effect of surface quality on overgrowth of highly strained GaInAs/GaAs quantum wells and improvement by a strained buffer layer

D Schlenker, Z Pan, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   38 ( 9A )   5023 - 5027   1999年9月

1.2μm帯GaInAs/GaAsレーザを用いた単一モード光ファイバ伝送

小山 二三夫, ディトマー シュレンカー, 宮本 智之, 陳 誌標, 松谷 晃宏, Sakaguchi T., 伊賀 健一

電子情報通信学会ソサイエティ大会講演論文集   1999 ( 2 )   306 - 306   1999年8月

1.17-mu m highly strained GaInAs-GaAs quantum-well laser

D Schlenker, T Miyamoto, Z Chen, F Koyama, K Iga

IEEE PHOTONICS TECHNOLOGY LETTERS   11 ( 8 )   946 - 948   1999年8月

1.17μm highly strained GaInAs-GaAs quantum-well laser

Dietmar Schlenker, Tomoyuki Miyamoto, Zhibiao Chen, Fumio Koyama, Kenichi Iga

IEEE Photon. Technol. Lett.   11 ( 8 )   946 - 948   1999年8月

1.2μm帯高歪GaInAs/GaAsレーザと単一モード光ファイバLANへの適用可能性

小山 二三夫, シュレンカー ディトマー, 宮本 智之, 陳 誌標, 松谷 晃宏, 坂口 孝浩, 伊賀 健一

電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   99 ( 173 )   1 - 6   1999年7月

1.2 mu m highly strained GaInAs/GaAs quantum well lasers for singlemode fibre datalink

F Koyama, D Schlenker, T Miyamoto, Z Chen, A Matsutani, T Sakaguchi, K Iga

ELECTRONICS LETTERS   35 ( 13 )   1079 - 1081   1999年6月

1.2μm highly strained GaInAs/GaAs quantum well lasers for singlemode fibre datalink

Fumio Koyama, Dietmar Schlenker, Tomoyuki Miyamoto, Zhibiao Chen, Akihiro Matsutani, Takahiro Sakaguchi, Kenichi Iga

Electron. Lett.   35 ( 13 )   1079 - 1081   1999年6月

Long wavelength GaInAsP/InP laser with n-n contacts using AlAs/InP hole injecting tunnel junction

S Sekiguchi, T Kimura, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   38 ( 4B )   L443 - L445   1999年4月

Long wavelength GaInAsP/InP laser with n-n contacts using AlAs/InP hole injecting tunnel junction

S Sekiguchi, T Kimura, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   38 ( 4B )   L443 - L445   1999年4月

Thermal annealing of GaInNAs/GaAs quantum wells grown by chemical beam epitaxy and its effect on photoluminescence

T Kageyama, T Miyamoto, S Makino, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   38 ( 3B )   L298 - L300   1999年3月

Thermal annealing of GaInNAs/GaAs quantum wells grown by chemical beam epitaxy and its effect on photoluminescence

T Kageyama, T Miyamoto, S Makino, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   38 ( 3B )   L298 - L300   1999年3月

Quality improvement of GaInNAs/GaAs quantum well growth by metalorganic chemical vapor deposition using tertiarybutylarsine

Z Pan, T Miyamoto, D Schlenker, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   38 ( 2B )   1012 - 1014   1999年2月

Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property

T Miyamoto, K Takeuchi, T Kageyama, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   197 ( 1-2 )   67 - 72   1999年2月

Quality improvement of GaInNAs/GaAs quantum well growth by metalorganic chemical vapor deposition using tertiarybutylarsine

Z Pan, T Miyamoto, D Schlenker, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   38 ( 2B )   1012 - 1014   1999年2月

Miscibility gap calculation for Ga1-xInxNyAs1-y including strain effects

D Schlenker, T Miyamoto, Z Pan, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   196 ( 1 )   67 - 70   1999年1月

GaNAs/GaInAs short-period superlattice quantum well structures grown by MOCVD using TBAs and DMHy

T Miyamoto, S Sato, Z Pan, D Schlenker, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   195 ( 1-4 )   421 - 426   1998年12月

Low temperature growth of GaInNAs/GaAs quantum wells by metalorganic chemical vapor deposition using tertiarybutylarsine

Z Pan, T Miyamoto, D Schlenker, S Sato, F Koyama, K Iga

JOURNAL OF APPLIED PHYSICS   84 ( 11 )   6409 - 6411   1998年12月

Low temperature growth of GaInNAs/GaAs quantum wells by metalorganic chemical vapor deposition using tertiarybutylarsine

Z Pan, T Miyamoto, D Schlenker, S Sato, F Koyama, K Iga

JOURNAL OF APPLIED PHYSICS   84 ( 11 )   6409 - 6411   1998年12月

Design considerations of GaInNAs-GaAs quantum wells: Effects of indium and nitrogen mole fractions

CK Kim, T Miyamoto, YH Lee

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   37 ( 11 )   5994 - 5996   1998年11月

Design considerations of GaInNAs-GaAs quantum wells: Effects of indium and nitrogen mole fractions

CK Kim, T Miyamoto, YH Lee

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   37 ( 11 )   5994 - 5996   1998年11月

RFラジカルセルを用いた化学ビーム成長法によるGaInNAs/GaAs量子井戸構造の成長

影山 健生, 竹内 寛爾, 宮本 智之, 小山 二三夫, 伊賀 健一

電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   98 ( 109 )   79 - 84   1998年6月

Effect of piezo electric field on emission characteristics in GaN/AlGaN quantum wells

T Honda, T Miyamoto, T Sakaguchi, H Kawanishi, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   189 ( No. )   644 - 647   1998年6月

Chemical beam epitaxy growth and characterization of GaNAs/GaAs

K Takeuchi, T Miyamoto, T Kageyama, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   37 ( 3B )   1603 - 1607   1998年3月

Chemical beam epitaxy growth and characterization of GaNAs/GaAs

K Takeuchi, T Miyamoto, T Kageyama, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   37 ( 3B )   1603 - 1607   1998年3月

GaInNAs/GaAs quantum well growth by chemical beam epitaxy

T Miyamoto, K Takeuchi, T Kageyama, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   37 ( 1 )   90 - 91   1998年1月

GaInNAs/GaAs quantum well growth by chemical beam epitaxy

T Miyamoto, K Takeuchi, T Kageyama, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   37 ( 1 )   90 - 91   1998年1月

A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers

T Miyamoto, K Takeuchi, F Koyama, K Iga

IEEE PHOTONICS TECHNOLOGY LETTERS   9 ( 11 )   1448 - 1450   1997年11月

化学ビーム成長法によるGaInNAs/GaAsの成長と長波長帯面発光レーザへの応用

宮本 智之, 竹内 寛爾, 小山 二三夫, 伊賀 健一

電子情報通信学会技術研究報告. LQE, レーザ・量子エレクトロニクス   97 ( 100 )   55 - 60   1997年6月

Auto-doping of carbon to AlAs grown by metalorganic chemical vapor deposition using trimethylaluminum and tertiarybutylarsine

S Sekiguchi, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   36 ( 5A )   2638 - 2639   1997年5月

Auto-doping of carbon to AlAs grown by metalorganic chemical vapor deposition using trimethylaluminum and tertiarybutylarsine

S Sekiguchi, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   36 ( 5A )   2638 - 2639   1997年5月

GaInNAs/GaAs量子井戸レーザの長波長化に関する検討

宮本 智之, 高田 剛, 竹内 寛爾, 小山 二三夫, 伊賀 健一

電子情報通信学会総合大会講演論文集   1997 ( 1 )   430 - 430   1997年3月

Design and characterization of InAsP/InP/GaInP short-period superlattices for long-wavelength multi-quantum barrier grown by chemical beam epitaxy

TH Loh, T Miyamoto, T Takada, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   172 ( 3-4 )   291 - 297   1997年3月

1.3μm GaInNAs/GaAs面発光レーザの構造設計

宮本 智之, 高田 剛, 竹内 寛爾, 小山 二三夫, 伊賀 健一

電子情報通信学会ソサイエティ大会講演論文集   1996 ( 1 )   322 - 322   1996年9月

Reduction of inelastic scattering effect by introduction of GaInAs/GaInP strain-compensated superlattice into multi-quantum barriers

T Loh, T Miyamoto, Y Kurita, F Koyama, K Iga

OPTICAL AND QUANTUM ELECTRONICS   28 ( 5 )   613 - 622   1996年5月

REFRACTIVE-INDEX VARIATION IN GAINASP/INP QUANTUM-CONFINED STRUCTURES GROWN BY CHEMICAL BEAM EPITAXY

Y KURITA, N YOKOUCHI, T MIYAMOTO, F KOYAMA, K IGA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   34 ( 10 )   5626 - 5627   1995年10月

REFRACTIVE-INDEX VARIATION IN GAINASP/INP QUANTUM-CONFINED STRUCTURES GROWN BY CHEMICAL BEAM EPITAXY

Y KURITA, N YOKOUCHI, T MIYAMOTO, F KOYAMA, K IGA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   34 ( 10 )   5626 - 5627   1995年10月

STUDY OF INELASTIC-SCATTERING EFFECT IN UNSTRAINED AND STRAIN-COMPENSATED GAINAS/GAINP MULTIQUANTUM BARRIERS

T LOH, F KOYAMA, K IGA, K FURUYA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   34 ( 8B )   4511 - 4514   1995年8月

STUDY OF INELASTIC-SCATTERING EFFECT IN UNSTRAINED AND STRAIN-COMPENSATED GAINAS/GAINP MULTIQUANTUM BARRIERS

T LOH, F KOYAMA, K IGA, K FURUYA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   34 ( 8B )   4511 - 4514   1995年8月

STRAIN-COMPENSATED MULTIQUANTUM BARRIERS FOR REDUCTION OF ELECTRON LEAKAGES IN LONG-WAVELENGTH SEMICONDUCTOR-LASERS

T LOH, T MIYAMOTO, F KOYAMA, K IGA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   34 ( 3 )   1504 - 1505   1995年3月

STRAIN-COMPENSATED MULTIQUANTUM BARRIERS FOR REDUCTION OF ELECTRON LEAKAGES IN LONG-WAVELENGTH SEMICONDUCTOR-LASERS

T LOH, T MIYAMOTO, F KOYAMA, K IGA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   34 ( 3 )   1504 - 1505   1995年3月

CARRIER TRANSPORT IN P-TYPE GAINASP/INP DISTRIBUTED BRAGG REFLECTORS

T MIYAMOTO, K MORI, H MAEKAWA, Y INABA, F KOYAMA, K IGA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   33 ( 8 )   4614 - 4616   1994年8月

CARRIER TRANSPORT IN P-TYPE GAINASP/INP DISTRIBUTED BRAGG REFLECTORS

T MIYAMOTO, K MORI, H MAEKAWA, Y INABA, F KOYAMA, K IGA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   33 ( 8 )   4614 - 4616   1994年8月