:Tokyo Institute of Technology Research Center for Quantum Effect Electronics Lecturer

1998 - 2000

:東京工業大学 精密工学研究所 助手

1996 - 1998

:Tokyo Institute of Technology Precision and Intelligence Laboratory Research Assistant

1996 - 1998

電子情報通信学会

LED based optical wireless power transmission for automatic tracking and powering mobile object in real time

Mingzhi Zhao, Tomoyuki Miyamoto

IEEE Access   Vol. 13   2025.2

Flying a Micro-Drone by Dynamic Charging for Vertical Direction Using Optical Wireless Power Transmission

Tomoya Watamura, Takuo Nagasaka, Yuto Kikuchi, Tomoyuki Miyamoto

MDPI/Energies   Vol. 18   2025.1

Camera-Based Safety System for Optical Wireless Power Transmission Using Dynamic Safety-Distance

Zuo Chen, Tomoyuki Miyamoto

MDPI/Photonics   Vol. 11   2024.5

Real-Time Tracking of Photovoltaics by Differential Absorption Imaging in OpticalWireless Power Transmission

Kaoru Asaba, Tomoyuki Miyamoto

MDPI/Photonics   Vol. 11   2024.5

光ビームを用いた無線給電の基礎と展望

宮本智之

エネルギーレビュー   2024.5

光無線給電

宮本智之

光技術動向調査報告書   2024.3

Theory and Technology of Wireless Power Transfer -Inductive, Radio, Optical, and Supersonic Power Transfer-

Naoki Shinohara, Nuno Borges Carvalho, Takehiro Imura, Tomoyuki Miyamoto, Kazuhiro Fujimori, Alessandra Costanzo

2024.3

Optical Wireless Power Transmission

Tomoyuki Miyamoto

2024.3

Pros and Cons of Each WPT System

Naoki Shinohara, Nuno Borges Carvalho, Takehiro Imura, Tomoyuki Miyamoto, Kazuhiro Fujimori, Alessandra Costanzo

2024.2

Introduction

Naoki Shinohara, Nuno Borges Carvalho, Takehiro Imura, Tomoyuki Miyamoto, Kazuhiro Fujimori, Alessandra Costanzo

2024.2

Wireless Power Transmission by Magnetic Field

Naoki Shinohara, Nuno Borges Carvalho, Takehiro Imura, Tomoyuki Miyamoto, Kazuhiro Fujimori, Alessandra Costanzo

2024.2

Optical WPT

Tomoyuki Miyamoto

2024.2

Attitude Determination of Photovoltaic Device by Means of Differential Absorption Imaging

Kaoru Asaba, Tomoyuki Miyamoto

MDPI/Photonics   vol. 11 ( no. 111 )   2023.12

光無線給電の実現に向けた取り組み―IoT端末、移動体から水中まで

宮本智之

オプトロニクス   2023.10

Positioning of a photovoltaic device on a real two-dimensional plane in optical wireless power transmission by means of infrared differential absorption imaging

Kaoru Asaba, Tomoyuki Miyamoto

MDPI/Photonics   vol. 10 ( no. 10 )   2023.9

光ビームを用いる無線給電－小型端末からドローンや電気自動車への移動中給電を目指して

宮本智之

岩谷書店 科学   2023.8

光無線給電のモビリティ応用＝移動中給電により電動化や自動化の可能性を広げる＝

宮本智之

光アライアンス   2023.8

Efficient LED-array optical wireless power transmission system for portable power supply and its compact modularization

Mingzhi Zhao, Tomoyuki Miyamoto

MDPI/Photonics   vol. 10 ( no. 7 )   2023.7

光無線給電システムの構築と応用事例

宮本智之

車載テクノロジー   2023.7

Solar cell detection and position, attitude determination by differential absorption imaging in optical wireless power transmission

Kaoru Asaba, Tomoyuki Miyamoto

MDPI/Photonics   vol. 10 ( no. 5 )   2023.5

半導体レーザ

宮本智之

2023.3

室内機器から移動体まで対応する光無線給電技術

宮本智之, 植田紘司, 張家赫, 鶴田公隆

レーザー研究   vol. 51 ( no. 3 )   2023.3

フライアイレンズ系を用いた10m-1W級水中光無線給電の実験検証

多井楢葉, 高橋倭, 宮本智之

レーザー研究   vol. 51 ( no. 3 )   2023.3

光無線給電を用いる走行中給電型電気自動車のCO2排出量推定

須田祐輔, 宮本智之

レーザー研究   vol. 51 ( no. 3 )   2023.3

Relaxation of beam irradiation accuracy of cooperative optical wireless power transmission in terms of fly eye module with beam confinement mechanism

Kaoru Asaba, Tomoyuki Miyamoto

MDPI/Photonics   vol. 9 ( no. 12 )   2022.12

Preliminary characterization of robust detection method of Solar Cell Array for optical wireless power transmission with differential absorption image sensing

Kaoru Asaba, Kenta Moriyama, Tomoyuki Miyamoto

MDPI/Photonics   vol. 9 ( no. 11 )   2022.11

Experimental characterization of high tolerance to beam irradiation conditions of light beam power receiving module for optical wireless power transmission equipped with a fly-eye lens system

Yuha Tai, Tomoyuki Miyamoto

MDPI/Energies   vol. 15 ( no. 19 )   2022.10

光無線給電のモビリティ応用

宮本智之

オプトロニクス   2022.10

多様な拡がりが期待される光無線給電

宮本智之

電子情報通信学会誌   2022.9

1 W high performance LED-array based optical wireless power transmission system for IoT terminals

Mingzhi Zhao, Tomoyuki Miyamoto

MDPI/Photonics   vol. 9 ( no. 8 )   2022.8

System level requirement analysis of beam alignment and shaping for optical wireless power transmission system by semi–empirical simulation

Kaoru Asaba, Tomoyuki Miyamoto

MDPI/Photonics   vol. 9 ( no. 7 )   2022.6

光無線給電の特徴と動向

宮本智之

オプトニューズ(OITDA)   2022.5

まもなく離陸する光無線給電－小型端末，移動体から宇宙応用まで－

宮本智之

日本航空宇宙工業会会報   2022.2

Optimization for compact and high output LED-based optical wireless power transmission system

Mingzhi Zhao, Tomoyuki Miyamoto

Photonics   vol. 9 ( no. 1 )   2021.12

Tolerant distance and alignment deviation analysis of LED-based portable optical wireless power transmission system for compact IoT

Yuhuan Zhou, Tomoyuki Miyamoto

IEEJ Transactions on C   vol. 141 ( no. 12 )   2021.12

光無線給電の動向－小型端末，移動体から水中応用まで－

宮本智之, 李嘉莹

光学   vol. 50 ( no. 11 )   2021.11

レーザービーム応用−光無線給電

宮本智之

レーザー照明・ディスプレイ産業動向・市場予測レポート2021   2021.6

Proton implantation in just above active region for improvement of power conversion efficiency of VCSELs

Tomoyuki Miyamoto, Hayato Sakamoto

Electron. Lett.   57 ( 15 )   587 - 588   2021.4

Optical quality improvement and blue-shift of GaInNAs/GaAs quantum well structures by thermal annealing

T. Kageyama, T. Miyamoto, S. Makino, F. Koyama, K. Iga

2021.1

400 mW class high output power from LED-array optical wireless power transmission system for compact IoT

Yuhuan Zhou, Tomoyuki Miyamoto

IEICE ELEX   vol. 18 ( no. 2 )   2021.1

Characterization of visible color filters on optical wireless power transmission system for changing the surface appearance of solar cells

Yu Liu, Tomoyuki Miyamoto

The Journal of Engineering   vol. 2021 ( issue 1 )   2021.1

次世代モビリティへの光無線給電の可能性＝空飛ぶ自動車にレーザー給電できるのか＝

宮本智之

光アライアンス   2021.1

面発光型半導体レーザ（VCSEL）

宮本智之

距離･画像センサの基礎と最先端   2020.12

機器を配線から解放する光無線給電システム

宮本智之

ケミカルエンジニアリング   2020.12

レーザ光を用いた電力伝送

宮本智之

電気計算   2020.7

光無線給電への期待 －新たな光応用分野の創出に向けて－

宮本智之

電子情報通信学会論文誌C   vol. J103-C ( no. 5 )   2020.5

次世代モビリティへの光無線給電の適用可能性

宮本智之

車載テクノロジー   2020.5

Numerical analysis of power generation characteristics in beam irradiation control of indoor OWPT system

Jing Tang, Kazuhito Matsunaga, Tomoyuki Miyamoto

Optical Review   vol. 27 ( no. 4 )   2020.3

面発光レーザ

宮本智之

レーザー照明・ディスプレイ産業動向・市場予測レポート2020   2019.12

Report on OPIC2019 the 1st Optical Wireless and Fiber Power Transmission Conference (OWPT2019)

Tomoyuki Miyamoto, Noriyuki Yokouchi, Masaki Hirota, Takeo Maruyama

2019.8

Design, simulation, and characterization of fly-eye lens system for optical wireless power transmission

Yuki Katsuta, Tomoyuki Miyamoto

Jpn. J. Appl. Phys.   vol. 58 ( no. SJ )   2019.7

200mW-class LED based optical wireless power transmission for compact IoT

Yuhuan Zhou, Tomoyuki Miyamoto

Jpn. J. Appl. Phys.   vol. 58 ( no. SJ )   2019.7

面型発光デバイスの基礎と応用

宮本智之

光学   2019.7

Rate equation-based numerical analysis of mutual injection for phase locked 2D-VCSEL array using Talbot effect

Taichi Shichijo, Tomoyuki Miyamoto

Japanese Journal of Applied Physics   vol. 58 ( no. SJ )   2019.6

光無線給電

宮本智之

2019.3

光無線給電総論－新たな光技術・光産業を期待して－

宮本智之

光アライアンス   2019.2

VCSELの光無線給電応用

宮本智之

オプトロニクス   2019.1

面発光レーザーを用いた光無線給電技術

宮本智之

レーザー研究   vol. 46 ( no. 12 )   2018.12

Design and experimental characterization of optical wireless power transmission using GaAs solar cell and series-connected high-power vertical cavity surface emitting laser array

Yuki Katsuta, Tomoyuki Miyamoto

Japanese Journal of Applied Physics   vol. 57 ( no. 8S2 )   2018.8

Thermal conductivity reduction effect of thin layer on thermal resistance of vertical cavity surface emitting lasers

Masaki Mimura, Tomoyuki Miyamoto

Jpn. J. Appl. Phys.   vol. 57 ( no. 8S2 )   2018.8

面発光レーザーが拓く新たな光エレクトロニクス―その多彩な可能性

宮本智之

光アライアンス   2018.7

Optical wireless power transmission using VCSELs

Tomoyuki Miyamoto

Proc. SPIE   vol. 10682   2018.4

光無線給電への期待－光技術の応用範囲を拡げられるか－

宮本智之

O plus E   2018.2

光無線給電が拓く未来

宮本智之

オプトロニクス   2017.6

Shape control of AlGaAs selective oxidation by intermixing method

Tetsu Gi, Tomoyuki Miyamoto

Japanese Journal of Applied Physics   vol. 55 ( no. 11 )   2016.9

Quantum well intermixing technique using proton implantation for carrier confinement of vertical-cavity surface-emitting lasers Reviewed

Shouhei Moriwaki, Minoru Saitou, Tomoyuki Miyamoto

JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 8 )   2016.8

レーザー照明・ディスプレイ（分担著）

宮本智之

2016.3

近赤外半導体レーザーの最新動向

宮本智之

日本赤外線学会誌   2016.2

励起準位を用いた面発光レーザの動作温度範囲拡大

角田健, 宮本智之

レーザー研究   vol. 43 ( no. 7 )   2015.7

スタンダード工学系のフーリエ解析・ラプラス変換

植之原裕行, 宮本智之

2015.1

Control of carrier reserving and injection for high-speed semiconductor optical amplifier by using a tunnel injection structure Reviewed

Mikio Sorimachi, Tomoyuki Miyamoto

JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 1 )   2015.1

スタンダード工学系のベクトル解析

宮本智之, 植之原裕行

2014.12

Reflectivity characteristics of high-contrast grating mirrors for a small-sized beam spot

Asako Kikuchi, Tomoyuki Miyamoto

JPN. J. APPL. PHYS.   vol. 53   2014.7

Fabrication and characterization of VCSELs applying quantum well intermixing using spin-on-glass Reviewed

Tomohiro Akutsu, Takuya Ushio, Akihiro Matsutani, Tomoyuki Miyamoto

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11   10 ( 11 )   1452 - 1456   2013

Introduction to the issue on semiconductor lasers

Lester, L.F., Kovanis, V., Sze-Chun Chan, N., Tomoyuki Miyamoto, Sweeney, S.J.

IEEE Journal on Selected Topics in Quantum Electronics   2013

InAs Quantum Dot Growth on a Thin GaNP Buffer Layer on GaP by Metalorganic Chemical Vapor Deposition Reviewed

Tomoyuki Miyamoto, Satoru Tanabe, Rei Nishio, Yoshitaka Kobayashi, Ryoichiro Suzuki

JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 8 )   2012.8

招待講演 NUSOD2011会議報告 (レーザ・量子エレクトロニクス)

比嘉 康貴, 宮本智之

電子情報通信学会技術研究報告 : 信学技報   2011.12

Well-in-Well Structure for High-Speed Carrier Relaxation into Quantum Wells Reviewed

Yasutaka Higa, Mikio Sorimachi, Takuya Nishinome, Tomoyuki Miyamoto

JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 8 )   2011.8

Large Kink Characteristics in Light Output of Tunnel Injection Quantum Well Lasers Reviewed

Yasutaka Higa, Hiroshi Nakajima, Mikio Sorimachi, Tomoyuki Miyamoto

JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 8 )   2011.8

光エレクトロニクスとその応用

宮本智之, 共著

Vol.   2011.5

量子ドットエレクトロニクスの最前線

宮本智之, ほか

Vol.   2011.3

Multilayer InAs quantum dot with a thin spacer layer partly inserted GaNAs strain compensation layer

Tomoyuki Miyamoto, Ryoichiro Suzuki, Tomoyuki Sengoku

Jpn. J. Appl. Phys.   vol. 50 ( no. 3 )   2011.3

Multilayer InAs Quantum Dot with GaNAs Strain Compensation Layers Partly Inserted in a Thin Spacer Layer Reviewed

Tomoyuki Miyamoto, Ryoichiro Suzuki, Tomoyuki Sengoku

JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 3 )   2011.3

Post-thermal Annealing Effects on Photoluminescence Properties of InAs Quantum Dots on GaNAs Buffer Layer Reviewed

Tomoyuki Miyamoto, Ryoichiro Suzuki

JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 3 )   2011.3

The Reduction of Dumping Factor at Well-in-Well Quantum Well Lasers Reviewed

Yasutaka Higa, Mikio Sorimachi, Takuya Nishinome, Hajime Iwasaki, Akihiro Matsutani, Tomoyuki Miyamoto

2011 IEEE PHOTONICS CONFERENCE (PHO)   680 - 681   2011

次世代フォトニクスに向けた面発光レーザー技術

宮本智之

月刊 化学工業   2010.10

レーザーディスプレイ －基礎から応用まで－（分担著）

宮本智之

Vol.   2010.2

ポスター発表報告

伊東 一良, 馬場 俊彦, 美濃島 薫, 井戸 立身, 早瀬 潤子, 芦原 聡, 宮本智之

学術の動向   2010

Reduction of Surface Roughness of GaP on Si Substrate using Strained GaInP Interlayer by MOCVD Reviewed

Rei Nishio, Satoru Tanabe, Ryoichiro Suzuki, Kosuke Nemoto, Tomoyuki Miyamoto

2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)   2010

Theoretical Analysis of High Speed Semiconductor Optical Amplifier using Tunneling Injection Structure Reviewed

Kosuke Fujimoto, Tomoyuki Miyamoto, Yasutaka Higa, Hiroshi Nakajima, Fumio Koyama

2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9   2167 - 2168   2008

Reduction of Spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer Reviewed

Ryoichiro Suzuki, Tomoyuki Miyamoto, Fumio Koyama

2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4   252 - 253   2007

Investigation of the polarization characteristics of GaInAsSb-covered InAs quantum dots for application to surface-emitting devices Reviewed

Tetsuya Matsuura, Tomoyuki Miyamoto, Fumio Koyama

ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS   90 ( 10 )   1 - 8   2007

Wide modulation bandwidth VCSELs with, side current injection and copper-plated heatsink Reviewed

Naoki Jogan, Takeshi Uchida, Akihiro Matsutani, Tomoyuki Miyamoto, Hohroh Kobayshi

OFC/NFOEC 2007 - Optical Fiber Communication and the National Fiber Optic Engineers Conference 2007   2007

Recent advances of VCSEL technologies Reviewed

Fumio Koyama, Tomoyuki Miyamoto

2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS   420 - 425   2007

High temperature operation of 1.2 mu m single-transverse-mode highly strained GaInAs/GaAs QW laser Reviewed

Shigeru Kanazawa, Kazutaka Takeda, Tomoyuki Miyamoto, Fumio Koyama

OPTOELETRONIC MATERIALS AND DEVICES, PTS 1 AND 2   6352   2006

Polarization characteristics of Sb-introduced Ga(In)As covered InAs quantum dots Reviewed

Tetsuya Matsuura, Tomoyuki Miyamoto, Fumio Koyama

2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS   345 - +   2006

理工系のための解く！複素解析

安岡康一, 植之原裕行, 宮本智之

Vol.   2005.4

レーザーハンドブック

宮本智之

Vol.   2005.4

High-order transverse mode suppression in VCSELs with temperature-profile control Reviewed

Takeshi Uchida, Tomoyuki Miyamoto, Takahiro Sakaguchi, Fumio Koyama

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS   2005   467 - 468   2005

Topologocal characteristics of MBE grown Sb-introduced Ga(In)As covered InAs quantum dots on GaAs Reviewed

T Matsuura, T Miyamoto, M Ohta, F Koyama

2005 International Conference on Indium Phosphide and Related Materials   351 - 354   2005

Structure dependence of lasing characteristics of GaInAs/AlGaAs tunnel injection lasers Reviewed

M Ohta, T Furuhata, T Matsuura, Y Matsui, T Miyamoto, F Koyama

2005 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS   30 - 31   2005

Electro-thermal wavelength tuning of 1.2 μm GaInAs/GaAs vertical cavity surface emitting laser array Reviewed

Yasuhiro Uchiyama, Takashi Kondo, Kazutaka Takeda, Akihiro Matsutani, Takeshi Uchida, Tomoyuki Miyamoto, Fumio Koyama

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS   2005   326 - 327   2005

Wavelength elongation of MBE grown (Ga)InAs QDs by GaInAsSb cover layer Reviewed

T Matsuura, T Miyamoto, M Ohta, Y Matsui, T Furuhata, F Koyama

2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings   683 - 686   2004

Highly strained GaInAs/GaAs 1.21 mu m vertical cavity surface emitting laser with single-mode output power of 3mW Reviewed

Y Kondo, Y Uchiyama, K Takeda, A Matsutani, T Miyamoto, F Koyama

2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2   142 - 143   2004

Isolator-free, uncooled operation of highly strained 1.1 μm GaInAs/GaAs vertical cavity surface emitting laser for 10 Gb/s single mode fiber data transmission

Takashi Kondo, Masakazu Arai, Akihiro Matsutani, Tomoyuki Miyamoto, Fumio Koyama

OSA Trends in Optics and Photonics Series   95   74 - 76   2004

1.2 mu m band high-density multiple-wavelength vertical cavity surface emitting laser array Reviewed

Y Uchiyama, T Kondo, K Takeda, A Matsutani, J Hashizume, U Takeshi, T Miyamoto, F Koyama

2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2   412 - 413   2004

Thermal annealing effect on self-assembled GaInNAs/GaAs quantum dots grown by chemical beam epitaxy Reviewed

S Makino, T Miyamoto, M Ohta, T Matsuura, Y Matsui, F Koyama

2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS   460 - 463   2003

Investigation of well thickness reduction effect of GaInNAs/GaAs quantum well lasers Reviewed

M Ohta, T Miyamoto, S Makino, T Matsuura, Y Matsui, F Koyama

2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS   204 - 207   2003

1200 nm highly strained GaInAs/GaAs surface emitting lasers

Koyama F, Miyamoto T, Arai M, Kondo T

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS   1   271 - 272   2002.12

Effect of quantum well width reduction for GaInNAs/GaAs lasers Reviewed

M Ohta, T Miyamoto, S Makino, Y Ikenaga, F Koyama

OPTICAL REVIEW   9 ( 6 )   231 - 233   2002.11

1.2 μm band multiple-wavelength GaInAs/GaAs vertical cavity surface emitting laser array on patterned substrate

Arai M, Kondo T, Azuchi M, Uchida T, Matsutani A, Miyamoto T, Koyama F

Conference Proceedings - International Conference on Indium Phosphide and Related Materials   303 - 306   2002

Temperature characteristics of 1.16 mu m highly strained GaInAs/GaAs VCSELs. Reviewed

T Kondo, M Arai, N Nishiyama, M Azuchi, A Matsutani, T Miyamoto, F Koyama, K Iga

VERTICAL-CAVITY SURFACE-EMITTING LASERS VI   4649   39 - 49   2002

Long- and Short-Wavelength VCSELs

Tomoyuki Miyamoto, Kenichi Iga, Fumio Koyama

Proceedings of SPIE - The International Society for Optical Engineering   83   238 - 260   2002

Multiple-wavelength GaInAs/GaAs vertical cavity surface emitting laser array with wavelength span of over 100 nm

Masakazu Arai, Takashi Kondo, Akihiro Matsutani, Tomoyuki Miyamoto, Fumio Koyama

Conference Digest - IEEE International Semiconductor Laser Conference   9 - 10   2002

1.4 mu m GaInNAs/GaAs quantum well laser grown by chemical beam epitaxy Reviewed

Y Ikenaga, T Miyamoto, S Makino, T Kageyama, M Arai, F Koyama, K Iga

COMPOUND SEMICONDUCTORS 2001   ( 170 )   201 - 205   2002

Wide wavelength control of highly strained GaInAs/GaAs QWs on patterned substrate for multiwavelength VCSEL array Reviewed

M Arai, T Kondo, N Nishiyama, M Azuchi, T Miyamoto, F Koyama, K Iga

COMPOUND SEMICONDUCTORS 2001   ( 170 )   677 - 680   2002

1.1-1.2 μm Multiple-wavelength vertical cavity surface emitting laser array with highly strained GaInAs/GaAs QWs on patterned substrate

Arai M, Kondo T, Nishiyama N, Matsutani A, Miyamoto T, Koyama F, Iga K

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS   2   600 - 601   2001.12

Highly strained GaInAs-GaAs quantum-well vertical-cavity surface-emitting laser on GaAs (311)B substrate for stable polarization operation

Nishiyama N, Arai M, Shinada S, Azuchi M, Miyamoto T, Koyama F, Iga K

IEEE Journal on Selected Topics in Quantum Electronics   7 ( 2 )   242 - 248   2001.3

Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1mW Reviewed

T Kageyama, T Miyamoto, S Makino, Y Ikenaga, N Nishiyama, A Matsutani, F Koyama, K Iga

ELECTRONICS LETTERS   37 ( 4 )   225 - 226   2001.2

Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1mW Reviewed

S Makino, T Miyamoto, T Kageyama, Y Ikenaga, N Nishiyama, A Matsutani, F Koyama, K Iga

CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST   608 - 609   2001

CBE growth of GaInNAs quantum wells and dots for long-wavelength lasers Reviewed

T Miyamoto, T Kageyama, S Makino, Y Ikenaga, F Koyama, K Iga

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES IX   4283   24 - 35   2001

GaInNAs/GaAs quantum dots grown by chemical beam epitaxy Reviewed

S Makino, T Miyamoto, T Kageyama, N Nishiyama, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   221   561 - 565   2000.12

1.5 W operation of superluminescent diode with highly strained GaInAs/GaAs quantum well emitting at 1.2 mu m band Reviewed

F Koyama, D Schlenker, T Miyamoto, Z Chen, T Yamatoya, T Kondo, K Iga

2000 IEEE 17TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST   71 - 72   2000

A highly strained (lambda=1.12 mu m) GaInAs/GaAs VCSEL on GaAs (311)B substrate exhibiting stable polarization Reviewed

N Nishiyama, M Arai, S Shinada, T Miyamoto, F Koyama, K Iga

2000 IEEE 17TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST   11 - 12   2000

Continuous-wave operation of GaInNAs/GaAs lasers grown by chemical beam epitaxy Reviewed

T Kageyama, T Miyamoto, S Makino, N Nishiyama, F Koyama, K Iga

2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS   447 - 450   2000

Long wavelength GaInAsP/InP laser with automatically formed tunneling aperture Reviewed

S Sekiguchi, T Miyamoto, T Kimura, F Koyama, K Iga

2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS   451 - 454   2000

先端光エレクトロニクスシリーズ7 面発光レーザの基礎と応用

伊賀健一, 小山二三夫編著, 宮本智之

Vol.   1999.6

Optical quality improvement and blue-shift of GaInNAs/GaAs quantum well structures by thermal annealing Reviewed

T Kageyama, T Miyamoto, S Makino, F Koyama, K Iga

COMPOUND SEMICONDUCTORS 1998   ( 162 )   639 - 644   1999

Progress of vertical cavity surface emitting lasers Reviewed

T Miyamoto, F Koyama, K Iga

COMPOUND SEMICONDUCTORS 1998   ( 162 )   11 - 20   1999

1.2 mu m GaInAs/GaAs lasers - Are they useful for high capacity single mode fiber datacom ? Reviewed

F Koyama, D Schlenker, T Miyamoto, ZB Chen, K Iga

PHOTONICS TECHNOLOGY INTO THE 21ST CENTURY: SEMICONDUCTORS, MICROSTRUCTURES, AND NANOSTRUCTURES   3899   290 - 296   1999

Quality improvement of GaInNAs/GaAs quantum wells grown by MOCVD using tertiarybutylarsine Reviewed

Z Pan, T Miyamoto, D Schlenker, F Koyama, K Iga

1998 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS - CONFERENCE PROCEEDINGS   135 - 138   1998

InGaN selective MOCVD growth and polycrystalline formation on SiO2-patterned sapphire substrates Reviewed

A Inoue, T Sakaguchi, Y Moriguchi, M Iwata, T Miyamoto, F Koyama, K Iga

BLUE LASER AND LIGHT EMITTING DIODES II   170 - 173   1998

Reduction of inelastic scattering effect by introducing strain-compensated superlattice into GaInAs/GaInP multi-quantum barriers Reviewed

T LOH, T MIYAMOTO, Y KURITA, F KOYAMA, K IGA

SEVENTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS   373 - 376   1995

Surface emitting lasers grown by CBE

Tomoyuki Miyamoto, Takashi Uchida, Noriyuki Yokouchi, Kenichi Iga

J. Crystal Growth   vol. 136 ( No. )   1994.12

BAND DISCONTINUITY REDUCTION OF I-GAINASP P-INP FOR IMPROVING 1.55-MU-M GAINASP INP SURFACE-EMITTING LASER PERFORMANCES Reviewed

K MORI, T MIYAMOTO, N YOKOUCHI, Y INABA, F KOYAMA, K IGA

SIXTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS: CONFERENCE PROCEEDINGS   311 - 314   1994

CBE法によるGaInAsP/InP歪量子井戸の成長と面発光レーザへの適用に関する研究

宮本智之

1993.3

Recent progress and hot technologies of vertical-cavity surface emitting lasers

Tomoyuki Miyamoto

37 ( 9 )   649 - 656   2009

Recent Progress and Hot Technologies of Vertical-Cavity Surface Emitting Lasers

MIYAMOTO Tomoyuki

rle   37 ( 9 )   649 - 656   2009

面発光レーザーの最近の進展

宮本智之

O plus E   31 ( 11 )   1251 - 1257   2009

High-density InAs quantum dots on GaNAs buffer layer

R. Suzuki, T. Miyamoto, T. Sengoku, F. Koyama

Journal of Crystal Growth   310 ( 23 )   5085 - 5088   2008.11

High-density InAs quantum dots on GaNAs buffer layer

R. Suzuki, T. Miyamoto, T. Sengoku, F. Koyama

JOURNAL OF CRYSTAL GROWTH   310 ( 23 )   5085 - 5088   2008.11

Thermal Resistance Reduction of Vertical-Cavity Surface-Emitting Lasers by Thickness-Modulated Distributed Bragg Reflector

Tomoyuki Miyamoto, Tomohiro Nishina, Yoshihiro Kashihara, Syuutarou Ishida, Fumio Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 8 )   6772 - 6776   2008.8

Reduction of spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer

Ryoichiro Suzuki, Tomoyuki Miyamoto, Tomoyuki Sengoku, Fumio Koyama

APPLIED PHYSICS LETTERS   92 ( 14 )   141110   2008.4

High-density InAs quantum dots on GaNAs buffer layer

Ryoichiro Suzuki, Tomoyuki Miyamoto, Tomoyuki Sengoku, Fumio Koyama

J. Crystal Growth   310   5085 - 5088   2008

Reduction of spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer

Ryoichiro Suzuki, Tomoyuki Miyamoto, Tomoyuki Sengoku, Fumio Koyama

Applied Physics Letters   92 ( 14 )   141110   2008

Theoretical design of carrier injection rate and recombination rate in tunnel injection quantum well lasers

Yasutaka Higa, Tomoyuki Miyamoto, Hiroshi Nakajima, Kosuke Fujimoto, Fumio Koyama

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9   5 ( 9 )   2838 - 2840   2008

Wavelength widening and performance improvement of vertical-cavity surface emitting lasers

Tomoyuki Miyamoto

91 ( 11 )   987 - 994   2008

面発光レーザとその波長域拡大・高性能化

宮本智之

電子情報通信学会誌   91 ( 11 )   987 - 994   2008

Theoretical Analysis of Carrier Injection Rate and Recombination Rate in Tunnel Injection Quantum Well Lasers

HIGA Yasutaka, MIYAMOTO Tomoyuki, NAKAJIMA Hiroshi, FUJIMOTO Kosuke, KOYAMA Fumio

IEICE technical report   107 ( 372 )   15 - 20   2007.11

Polarization control of 1.15 mu m vertical-cavity surface-emitting lasers using autocloned photonic crystal polarizer

P. Babu Dayal, N. Kitabayashi, T. Miyamoto, F. Koyama, T. Kawashima, S. Kawakami

APPLIED PHYSICS LETTERS   91 ( 4 )   041110-041110-3   2007.7

Polarization control of 1.15 mu m vertical-cavity surface-emitting lasers using autocloned photonic crystal polarizer

P. Babu Dayal, N. Kitabayashi, T. Miyamoto, F. Koyama, T. Kawashima, S. Kawakami

APPLIED PHYSICS LETTERS   91 ( 4 )   041110-041110-3   2007.7

Wavelength elongation and improved emission efficiency of MOCVD-grown InAs quantum dots by GaNAs buffer layer

R. Suzuki, T. Miyamoto, F. Koyama

Journal of Crystal Growth   298   574 - 577   2007.1

Wavelength elongation and improved emission efficiency of MOCVD-grown InAs quantum dots by GaNAs buffer layer

R. Suzuki, T. Miyamoto, F. Koyama

JOURNAL OF CRYSTAL GROWTH   298 ( No. )   574 - 577   2007.1

Investigation on polarization characteristics of GaInAsSb covered InAs quantum dot for application to surface emitting devices

Tetsuya Matsuura, Tomoyuki Miyamoto, Fumio Koyama

Trans. IEICE   J90-C ( 1 )   69 - 75   2007

GaInAsSbカバー層を有するInAs量子ドットの面発光型デバイス応用に向けた面内偏光特性の検討

松浦 哲也, 宮本 智之, 小山 二三夫

電子情報通信学会論文誌   J90-C ( 1 )   69 - 75   2007

Wavelength extension effect on lasing characteristics of highly-strained GaInAs/GaAs vertical-cavity surface-emitting lasers with cavity detuning

Kazutaka Takeda, Tomoyuki Miyamoto, Takashi Kondo, Yasuhiro Uchiyama, Naoto Kitabayashi, Takeshi Uchida, Akihiro Matsutani, Fumio Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   45 ( 8B )   6691 - 6696   2006.8

Short-period GaInAs/InP superlattice for distributed Bragg reflector

Syuutarou Ishida, Tomoyuki Miyamoto, Fumio Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   45 ( 24-28 )   L723 - L725   2006.7

Photoluminescence characterization of InAs quantum dots on GaNAs buffer layer by metalorganic chemical vapor deposition

Ryoichiro Suzuki, Tomoyuki Miyamoto, Tetsuya Matsuura, Fumio Koyama

Japanese Journal of Applied Physics, Part 2: Letters   45 ( 20-23 )   L585 - L587   2006.6

Photoluminescence characterization of InAs quantum dots on GaNAs buffer layer by metalorganic chemical vapor deposition

Ryoichiro Suzuki, Tomoyuki Miyamoto, Tetsuya Matsuura, Furnio Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   45 ( 20-23 )   L585 - L587   2006.6

Topological characteristics of InAs quantum dot with GaInAs cover using Sb surfactant

T Matsuura, T Miyamoto, F Koyama

APPLIED PHYSICS LETTERS   88 ( 18 )   no. 18   2006.5

Effect of index variation in active layer on transverse mode for vertical-cavity surface-emitting lasers

T Uchida, T Miyamoto, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   45 ( 4A )   2550 - 2555   2006.4

Structure-dependent lasing characteristics of tunnel injection GaInAs/AlGaAs single-quantum-well lasers

M Ohta, T Furuhata, T Iwasaki, T Matsuura, Y Kashihara, T Miyamoto, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   45 ( 4-7 )   L162 - L164   2006.2

Transverse mode control in long-monolithic-cavity VCSELs with temperature-profile control

T Uchida, T Miyamoto, T Sakaguchi, F Koyama

ELECTRONICS LETTERS   42 ( 2 )   94 - 96   2006.1

Photoluminescence characterization of (Ga)InAs quantum dots with GaInAsSb cover layer grown by MBE

T Matsuura, T Miyamoto, M Ohta, F Koyama

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3   3 ( 3 )   516 - +   2006

InAs quantum dot formed on GaNAs buffer layer by metalorganic chemical vapor deposition

R Suzuki, T Miyamoto, T Matsuura, F Koyama

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3   3 ( 3 )   528 - +   2006

Topological characteristics of InAs quantum dot with GaInAs cover using Sb surfactant

Tetsuya Matsuura, Tomoyuki Miyamoto, Fumio Koyama

Appl. Phys. Lett.   88 ( no. 18 )   no. 18   2006

Low threshold GaInAs quantum well lasers grown under low growth rate by solid-source MBE for 1200 nm wavelength range

M Ohta, T Miyamoto, T Matsuura, Y Matsui, T Furuhata, T Iwasaki, Y Kashihara, F Koyama

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3   3 ( 3 )   419 - +   2006

InAs quantum dot formed on GaNAs buffer layer by metalorganic chemical vapor deposition

R. Suzki, T. Miyamoto, T. Matsuura, F. Koyama

Physica Status Solidi C: Conferences   3 ( 3 )   528 - 531   2006

Effect of index variation in active layer on transverse mode for vertical-cavity surface-emitting lasers

Takeshi Uchida, Tomoyuki Miyamoto, Fumio Koyama

Jpn. J. Appl. Phys.   45 ( 4A )   2550 - 2555   2006

Wavelength control of 1.2μm GaInAs/GaAs high-density vertical cavity surface emitting laser array

UCHIYAMA Yasuhiro, TAKEDA Kazutaka, MIYAMOTO Tomoyuki, KOYAMA Fumio

IEICE technical report   105 ( 455 )   1 - 4   2005.12

Structure dependence of lasing characteristics of GaInAs/AlGaAs tunneling injection lasers

Ohta M., Furuhata T., Matsuura T., Matsui Y., Miyamoto T., Koyama F.

Technical report of IEICE. OPE   105 ( 142 )   1 - 6   2005.6

PL characteristics of InAs quantum dots with Sb irradiation in growth interruption

T. Matsuura, T. Miyamoto, M. Ohta, Y. Matsui, T. Furuhata, F. Koyama

Journal of Crystal Growth   278 ( 1-4 )   51 - 56   2005.5

Sb surfactant effect on highly strained GaInAs/GaAs quantum well grown by molecular beam epitaxy

M. Ohta, T. Miyamoto, T. Kageyama, T. Matsuura, Y. Matsui, T. Furuhata, F. Koyama

Journal of Crystal Growth   278 ( 1-4 )   521 - 525   2005.5

PL characteristics of InAs quantum dots with Sb irradiation in growth interruption

T Matsuura, T Miyamoto, M Ohta, Y Matsui, T Furuhata, F Koyama

JOURNAL OF CRYSTAL GROWTH   278 ( 1-4 )   51 - 56   2005.5

Sb surfactant effect on highly strained GaInAs/GaAs quantum well grown by molecular beam epitaxy

M Ohta, T Miyamoto, T Kageyama, T Matsuura, Y Matsui, T Furuhata, F Koyama

JOURNAL OF CRYSTAL GROWTH   278 ( 1-4 )   521 - 525   2005.5

1.2 mu m band GaInAs/GaAs high-density multiple-wavelength vertical cavity surface emitting laser array

Y Uchiyama, T Kondo, K Takeda, A Matsutani, T Uchida, T Miyamoto, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   44 ( 1-7 )   L214 - L215   2005

1.2 mu m band GaInAs/GaAs high-density multiple-wavelength vertical cavity surface emitting laser array

Y Uchiyama, T Kondo, K Takeda, A Matsutani, T Uchida, T Miyamoto, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   44 ( 1-7 )   L214 - L215   2005

1.2 mu m band GaInAs/GaAs high-density multiple-wavelength vertical cavity surface emitting laser array

Y Uchiyama, T Kondo, K Takeda, A Matsutani, T Uchida, T Miyamoto, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   44 ( 1-7 )   L214 - L215   2005

Optical quality dependence on growth rate for solid-source molecular beam epitaxy grown highly strained GaInAsSb/GaAs quantum wells

M Ohta, T Miyamoto, T Matsuura, Y Matsui, T Furuhata, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   43 ( 12B )   L1569 - L1571   2004.12

Optical quality dependence on growth rate for solid-source molecular beam epitaxy grown highly strained GaInAsSb/GaAs quantum wells

M Ohta, T Miyamoto, T Matsuura, Y Matsui, T Furuhata, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   43 ( 12B )   L1569 - L1571   2004.12

MBE growth of GaInAsSb-based quantum dots for long-wavelength lasers on GaAs

MIYAMOTO Tomoyuki, MATSUURA Tetsuya, OHTA Masataka, MATSUI Yasutaka, FURUHATA Tatsuya, KOYAMA Fumio

Technical report of IEICE. LQE   104 ( 362 )   45 - 50   2004.10

Characterization of single-wavelength optically pumped GaInAsP/InP vertical-cavity surface-emitting lasers with dielectric mirrors

J Kinoshita, T Miyamoto, Y Onishi, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   43 ( 8B )   5928 - 5932   2004.8

Improvement in photoluminescence efficiency of GaInNAs/GaAs quantum wells grown by metalorganic chemical vapor deposition for low-threshold 1.3 mu m range lasers

M Kawaguchi, T Miyamoto, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   43 ( 8A )   5262 - 5268   2004.8

Analysis on the compensating thermal lensing effect using a convex mirror in vertical-cavity surface-emitting lasers

T Uchida, T Miyamoto, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   43 ( 8B )   5933 - 5936   2004.8

Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy

T Kageyama, T Miyamoto, M Ohta, T Matsuura, Y Matsui, T Furuhata, F Koyama

JOURNAL OF APPLIED PHYSICS   96 ( 1 )   44 - 48   2004.7

Surfactant effect of Sb on GaInAs quantum dots grown by molecular beam epitaxy

T Matsuura, T Miyamoto, T Kageyama, M Ohta, Y Matsui, T Furuhata, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   43 ( 5A )   L605 - L607   2004.5

P-type doping characteristics of GaInNAs : Be grown by solid source molecular beam epitaxy

T Matsuura, T Miyamoto, S Makino, M Ohta, Y Matsui, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   43 ( 4A )   L433 - L435   2004.4

GaInNAs intermediate layer for improvement of lasing characteristics of GaInNAs quantum well lasers

M Kawaguchi, T Miyamoto, A Saitoh, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   43 ( 4A )   L453 - L455   2004.4

Transverse mode control by etch-depth tuning in 1120-nm GaInAs/GaAs photonic crystal

JH Baek, DS Song, IK Hwang, KH Lee, YH Lee, YG Ju, T Kondo, T Miyamoto, F Koyama

OPTICS EXPRESS   12 ( 5 )   859 - 867   2004.3

Transverse mode control by etch-depth tuning in 1120-nm GaInAs/GaAs photonic crystal

JH Baek, DS Song, IK Hwang, KH Lee, YH Lee, YG Ju, T Kondo, T Miyamoto, F Koyama

OPTICS EXPRESS   12 ( 5 )   859 - 867   2004.3

Photoluminescence and lasing characteristics of GaInNAs/GaAsP strain-compensated quantum wells

M Kawaguchi, T Miyamoto, A Saitoh, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   43 ( 2B )   L267 - L270   2004.2

Photoluminescence and lasing characteristics of GaInNAs/GaAsP strain-compensated quantum wells

M Kawaguchi, T Miyamoto, A Saitoh, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   43 ( 2B )   L267 - L270   2004.2

Isolator-free 10 Gbit/s singlemode fibre data transmission using 1.1 mu m GaInAs/GaAs vertical cavity surface emitting laser

T Kondo, M Arai, A Matsutani, T Miyamoto, F Koyama

ELECTRONICS LETTERS   40 ( 1 )   65 - 66   2004.1

Isolator-free 10 Gbit/s singlemode fibre data transmission using 1.1 mu m GaInAs/GaAs vertical cavity surface emitting laser

T Kondo, M Arai, A Matsutani, T Miyamoto, F Koyama

ELECTRONICS LETTERS   40 ( 1 )   65 - 66   2004.1

Elongation of emission wavelength of GaInAsSb-covered (Ga)InAs quantum dots grown by molecular beam epitaxy

T Matsuura, T Miyamoto, T Kageyama, M Ohta, Y Matsui, T Furuhata, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   43 ( 1A-B )   L82 - L84   2004.1

Analysis on the compensating thermal lensing effect using a convex mirror in vertical-cavity surface-emitting lasers

Takeshi Uchida, Tomoyuki Miyamoto, Fumio Koyama

Jpn. J. Appl. Phys.   43 ( 8B )   5933 - 5936   2004

Thermal crosstalk evaluation of densely integrated vertical cavity surface emitting laser array

Yasuhiro Uchiyama, Takashi Kondo, Kazutaka Takeda, Akihiro Matsutani, Takeshi Uchida, Tomoyuki Miyamoto, Fumio Koyama

IEICE Electronics Express   1 ( 17 )   545 - 550   2004

Improvement in photoluminescence efficiency of GaInNAs/GaAs quantum wells grown by metalorganic chemical vapor deposition for low threshold 1.3μm range lasers

Masao Kawaguchi, Tomoyuki Miyamoto, FUMIO KOYAMA

Jpn. J. Appl. Phys.   43 ( 8A )   5262 - 5268   2004

Recent Technologies in VCSELs

MIYAMOTO Tomoyuki, KOYAMA Fumio

Proceedings of the Society Conference of IEICE   2003 ( 1 )   "S - 23"-"S-24"   2003.9

Multiple-wavelength GaInAs-GaAs vertical cavity surface emitting laser array with extended wavelength span

M Arai, T Kondo, A Onomura, A Matsutani, T Miyamoto, F Koyama

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS   9 ( 5 )   1367 - 1373   2003.9

Densely integrated multiple-wavelength vertical-cavity surface-emitting laser array

A Onomura, M Arai, T Kondo, A Matsutani, T Miyamoto, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   42 ( 5B )   L529 - L531   2003.5

Growth characteristics of GaInNAs/GaAs quantum dots by chemical beam epitaxy

S Makino, T Miyamoto, M Ohta, T Kageyama, Y Ikenaga, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   251 ( 1-4 )   372 - 377   2003.4

Growth characteristics of GaInNAs/GaAs quantum dots by chemical beam epitaxy

S Makino, T Miyamoto, M Ohta, T Kageyama, Y Ikenaga, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   251 ( 1-4 )   372 - 377   2003.4

Wavelength elongation of GalnNAs lasers beyond 1.3 mu m

T Miyamoto, S Makino, Y Ikenaga, M Ohta, F Koyama

IEE PROCEEDINGS-OPTOELECTRONICS   150 ( 1 )   59 - 63   2003.2

Wavelength elongation of GalnNAs lasers beyond 1.3 mu m

T Miyamoto, S Makino, Y Ikenaga, M Ohta, F Koyama

IEE PROCEEDINGS-OPTOELECTRONICS   150 ( 1 )   59 - 63   2003.2

Analysis of transverse-mode control in VCSELs using a convex mirror

Takeshi Uchida, Tomoyuki Miyamoto

Jpn. J. Appl. Phys.   42 ( 11 )   6883 - 6886   2003

Thermal annealing effect on self-assembled GaInNAs/GaAs quantum dots grown by chemical beam epitaxy

S Makino, T Miyamoto, M Ohta, T Matsuura, Y Matsui, F Koyama

2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS   0(c) ( 4 )   1097 - 1100   2003

Analysis of Transverse-Mode Control in Vertical-Cavity Surface-Emitting Lasers Using a Convex Mirror

Uchida Takeshi, Miyamoto Tomoyuki

Jpn J Appl Phys   42 ( 11 )   6883 - 6886   2003

Singlemode fibre transmission using 1.2 mu m band GaInAs/GaAs surface emitting laser

T Kondo, M Arai, M Azuchi, T Uchida, A Matsutani, T Miyamoto, F Koyama

ELECTRONICS LETTERS   38 ( 16 )   901 - 903   2002.8

Singlemode fibre transmission using 1.2 mu m band GaInAs/GaAs surface emitting laser

T Kondo, M Arai, M Azuchi, T Uchida, A Matsutani, T Miyamoto, F Koyama

ELECTRONICS LETTERS   38 ( 16 )   901 - 903   2002.8

Growth of highly strained GaInAs-GaAs quantum wells on patterned substrate and its application for multiple-wavelength vertical-cavity surface-emitting laser array

M Arai, T Kondo, A Matsutani, T Miyamoto, F Koyama

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS   8 ( 4 )   811 - 816   2002.7

GaInAs-GaInNAs-GaInAs intermediate layer structure for long wavelength lasers

E Gouardes, T Miyamoto, M Kawaguchi, K Kondo, F Koyama, K Iga

IEEE PHOTONICS TECHNOLOGY LETTERS   14 ( 7 )   896 - 898   2002.7

GaInAs-GaInNAs-GaInAs intermediate layer structure for long wavelength lasers

E Gouardes, T Miyamoto, M Kawaguchi, K Kondo, F Koyama, K Iga

IEEE PHOTONICS TECHNOLOGY LETTERS   14 ( 7 )   896 - 898   2002.7

Effect of annealing on highly strained GaInAs/GaAs quantum wells

T Kondo, M Arai, M Azuchi, T Uchida, T Miyamoto, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   41 ( 6A )   L612 - L614   2002.6

Low threshold current density operation of 1.16 mu m highly strained GaInAs/GaAs vertical cavity surface emitting lasers on (100) GaAs substrate

T Kondo, M Arai, M Azuchi, T Uchida, A Matsutani, T Miyamoto, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   41 ( 5B )   L562 - L564   2002.5

Low threshold current density operation of 1.16 mu m highly strained GaInAs/GaAs vertical cavity surface emitting lasers on (100) GaAs substrate

T Kondo, M Arai, M Azuchi, T Uchida, A Matsutani, T Miyamoto, F Koyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   41 ( 5B )   L562 - L564   2002.5

1.4 mu m GaInNAs/GaAs quantum well laser grown by chemical beam epitaxy

Y Ikenaga, T Miyamoto, S Makino, T Kageyama, M Arai, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   41 ( 2A )   664 - 665   2002.2

Photoluminescence and lasing characteristics of GaInNAs quantum wells using GaInAs intermediate layers

M Kawaguchi, T Miyamoto, E Gouardes, S Minobe, T Kondo, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   41 ( 2B )   1034 - 1039   2002.2

Photoluminescence dependence on heterointerface for metalorganic chemical vapor deposition grown GaInNAs/GaAs quantum wells

M Kawaguchi, T Miyamoto, E Gouardes, T Kondo, F Koyama, K Iga

APPLIED PHYSICS LETTERS   80 ( 6 )   962 - 964   2002.2

Photoluminescence dependence on heterointerface for metalorganic chemical vapor deposition grown GaInNAs/GaAs quantum wells

M Kawaguchi, T Miyamoto, E Gouardes, T Kondo, F Koyama, K Iga

APPLIED PHYSICS LETTERS   80 ( 6 )   962 - 964   2002.2

Nitrogen composition and growth temperature dependence of growth characteristics for self-assembled GaInNAs/GaAs quantum dots by chemical beam epitaxy

S Makino, T Miyamoto, T Kageyama, Y Ikenaga, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   41 ( 2B )   953 - 957   2002.2

1.4 mu m GaInNAs/GaAs quantum well laser grown by chemical beam epitaxy

Y Ikenaga, T Miyamoto, S Makino, T Kageyama, M Arai, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   41 ( 2A )   664 - 665   2002.2

Temperature characteristics of lambda=1.3 mu m GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy

T Kageyama, T Miyamoto, S Makino, Y Ikenaga, F Koyama, K Iga

IEICE TRANSACTIONS ON ELECTRONICS   E85C ( 1 )   71 - 78   2002.1

Temperature characteristics of lambda=1.3 mu m GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy

T Kageyama, T Miyamoto, S Makino, Y Ikenaga, F Koyama, K Iga

IEICE TRANSACTIONS ON ELECTRONICS   E85C ( 1 )   71 - 78   2002.1

Composition dependence of thermal annealing effect on 1.3 mu m GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy

S Makino, T Miyamoto, T Kageyama, Y Ikenaga, M Arai, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   40 ( 11B )   L1211 - L1213   2001.11

Composition dependence of thermal annealing effect on 1.3 mu m GaInNAs/GaAs quantum well lasers grown by chemical beam epitaxy

S Makino, T Miyamoto, T Kageyama, Y Ikenaga, M Arai, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   40 ( 11B )   L1211 - L1213   2001.11

Tunnel junction for long-wavelength vertical-cavity surface-emitting lasers

S Sekiguchi, T Kimura, G Okazaki, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   40 ( 10 )   5909 - 5913   2001.10

Tunnel junction for long-wavelength vertical-cavity surface-emitting lasers

S Sekiguchi, T Kimura, G Okazaki, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   40 ( 10 )   5909 - 5913   2001.10

Proposal of optically pumped tunable surface emitting laser

A Murakami, S Sekiguchi, T Sakaguchi, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   40 ( 9AB )   L935 - L936   2001.9

Proposal of optically pumped tunable surface emitting laser

A Murakami, S Sekiguchi, T Sakaguchi, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   40 ( 9AB )   L935 - L936   2001.9

Lasing characteristics of low-threshold GaInNAs lasers grown by metalorganic chemical vapor deposition

M Kawaguchi, T Miyamoto, E Gouardes, D Schlenker, T Kondo, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   40 ( 7B )   L744 - L746   2001.7

Lasing characteristics of low-threshold GaInNAs lasers grown by metalorganic chemical vapor deposition

M Kawaguchi, T Miyamoto, E Gouardes, D Schlenker, T Kondo, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   40 ( 7B )   L744 - L746   2001.7

1.12 mu m polarization controlled highly strained GaInAs vertical-cavity surface-emitting lasers on GaAs(311)B by metal organic chemical vapor deposition

N Nishiyama, M Arai, S Shinada, M Azuchi, A Matsutani, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   40 ( 5A )   L437 - L439   2001.5

1.12 mu m polarization controlled highly strained GaInAs vertical-cavity surface-emitting lasers on GaAs(311)B by metal organic chemical vapor deposition

N Nishiyama, M Arai, S Shinada, M Azuchi, A Matsutani, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   40 ( 5A )   L437 - L439   2001.5

Lasing characteristics of 1.2 mu m highly strained GaInAs/GaAs quantum well lasers

T Kondo, D Schlenker, T Miyamoto, ZB Chen, M Kawaguchi, E Gouardes, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   40 ( 2A )   467 - 471   2001.2

Lasing characteristics of 1.2 mu m highly strained GaInAs/GaAs quantum well lasers

T Kondo, D Schlenker, T Miyamoto, ZB Chen, M Kawaguchi, E Gouardes, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   40 ( 2A )   467 - 471   2001.2

Critical layer thickness of 1.2-mu m highly strained GaInAs/GaAs quantum wells

D Schlenker, T Miyamoto, ZB Chen, M Kawaguchi, T Kondo, E Gouardes, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   221 ( No. )   503 - 508   2000.12

Optical quality dependence on growth rate for metalorganic chemical vapor deposition grown GaInNAs/GaAs

M Kawaguchi, T Miyamoto, E Gouardes, D Schlenker, T Kondo, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   39 ( 12A )   L1219 - L1220   2000.12

Growth and optical properties of highly strained GaInAs/GaAs quantum wells on (311)B GaAs by MOCVD

N Nishiyama, M Arai, S Shinada, T Miyamoto, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   221   530 - 534   2000.12

Critical layer thickness of 1.2-mu m highly strained GaInAs/GaAs quantum wells

D Schlenker, T Miyamoto, ZB Chen, M Kawaguchi, T Kondo, E Gouardes, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   221   503 - 508   2000.12

Continuous wave operation of 1.26 mu m GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition

S Sato, N Nishiyama, T Miyamoto, T Takahashi, N Jikutani, M Arai, A Matsutani, F Koyama, K Iga

ELECTRONICS LETTERS   36 ( 24 )   2018 - 2019   2000.11

Inclusion of strain effect in miscibility gap calculations for III-V semiconductors

D Schlenker, T Miyamoto, ZB Chen, M Kawaguchi, T Kondo, E Gouardes, J Gemmer, C Gemmer, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   39 ( 10 )   5751 - 5757   2000.10

1.15 mu m lasing operation of highly strained GaInAs/GaAs on GaAs (311)B substrate with high characteristic temperature (T-0=210 K)

N Nishiyama, M Arai, S Shinada, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   39 ( 10B )   L1046 - L1047   2000.10

Inclusion of strain effect in miscibility gap calculations for III-V semiconductors

D Schlenker, T Miyamoto, ZB Chen, M Kawaguchi, T Kondo, E Gouardes, J Gemmer, C Gemmer, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   39 ( 10 )   5751 - 5757   2000.10

Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition

M Kawaguchi, E Gouardes, D Schlenker, T Kondo, T Miyamoto, F Koyama, K Iga

ELECTRONICS LETTERS   36 ( 21 )   1776 - 1777   2000.10

Novel Semiconductors for Long-Wavelength Lasers : Toward Surface-Emitting Lasers

MIYAMOTO Tomoyuki, IGA Kenichi

The Journal of the Institute of Electronics,Information and Communication Engineers   83 ( 9 )   688 - 690   2000.9

Improvement of current injection uniformity and device resistance in long-wavelength vertical-cavity surface-emitting laser using a tunnel junction

S Sekiguchi, T Miyamoto, T Kimura, G Okazaki, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   39 ( 7A )   3997 - 4001   2000.7

Improvement of current injection uniformity and device resistance in long-wavelength vertical-cavity surface-emitting laser using a tunnel junction

S Sekiguchi, T Miyamoto, T Kimura, G Okazaki, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   39 ( 7A )   3997 - 4001   2000.7

High Temperature Characteristics of GaInNAs/GaAs Quantum Well Laser

KAGEYAMA T., MIYAMOTO T., MAKINO S., NISHIYAMA N., KOYAMA F., IGA K.

Technical report of IEICE. OPE   100 ( 169 )   17 - 22   2000.6

Wavelength extension of highly strained GaInAs/GaAs quantum wells and their application in lasers for high speed LANs

KOYAMA F., SCHLENKER D., MIYAMOTO T., CHEN Z., IGA K.

Technical report of IEICE. OPE   100 ( 95 )   25 - 30   2000.5

CBE and MOCVD growth of GaInNAs

T Miyamoto, T Kageyama, S Makino, D Schlenker, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   209 ( 2-3 )   339 - 344   2000.2

Data transmission over single-mode fiber by using 1.2-mu m uncooled GaInAs-GaAs laser for Gb/s local area network

F Koyama, D Schlenker, T Miyamoto, Z Chen, A Matsutani, T Sakaguchi, K Iga

IEEE PHOTONICS TECHNOLOGY LETTERS   12 ( 2 )   125 - 127   2000.2

Data transmission over single-mode fiber by using 1.2-mu m uncooled GaInAs-GaAs laser for Gb/s local area network

F Koyama, D Schlenker, T Miyamoto, Z Chen, A Matsutani, T Sakaguchi, K Iga

IEEE PHOTONICS TECHNOLOGY LETTERS   12 ( 2 )   125 - 127   2000.2

Optical quality of GaNAs and GaInNAs and its dependence on RF cell condition in chemical beam epitaxy

T Kageyama, T Miyamoto, S Makino, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   209 ( 2-3 )   350 - 354   2000.2

High-temperature operation up to 170 degrees C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy

T Kageyama, T Miyamoto, S Makino, N Nishiyama, F Koyama, K Iga

IEEE PHOTONICS TECHNOLOGY LETTERS   12 ( 1 )   10 - 12   2000.1

High-temperature operation up to 170 degrees C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy

T Kageyama, T Miyamoto, S Makino, N Nishiyama, F Koyama, K Iga

IEEE PHOTONICS TECHNOLOGY LETTERS   12 ( 1 )   10 - 12   2000.1

Growth of highly strained GaInAs/GaAs quantum wells for 1.2 mu m wavelength lasers

D Schlenker, T Miyamoto, Z Chen, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   209 ( 1 )   27 - 36   2000.1

Growth of highly strained GaInAs/GaAs quantum wells for 1.2 mu m wavelength lasers

D Schlenker, T Miyamoto, Z Chen, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   209 ( 1 )   27 - 36   2000.1

Optical quality of GaNAs and GaInNAs and its dependence on RF cell condition in chemical beam epitaxy

Takeo Kageyama, Tomoyuki Miyamoto, Shigeki Makino, Fumio Koyama, Kenichi Iga

J. Crystal Growth   209 ( 2/3 )   350 - 354   2000

1.15μm lasing operation of highly strained GaInAs/GaAs on GaAs (311)B substrate with high characteristic temperature (T_{<small>0</small>}=210 K)

Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga

Jpn. J. Appl. Phys.   39 ( 10B )   L1046 - L1047   2000

Low threshold current density operation of GaInNAs/GaAs quantum well lasers grown by metalorganic chemical vapour deposition

Masao Kawaguchi, Eric Gouardes, Dietmar Schlenker, Takashi Kondo, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga

Electron. Lett.   36 ( 21 )   1776 - 1777   2000

1.15μm lasing operation of highly strained GaInAs/GaAs on GaAs (311)B substrate with high characteristic temperature (T_0_=210 K)

Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga

Jpn. J. Appl. Phys.   39 ( 10B )   L1046 - L1047   2000

1.15μm lasing operation of highly strained GaInAs/GaAs on GaAs (311)B substrate with high characteristic temperature (T_{<small>0</small>}=210 K)

Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga

Jpn. J. Appl. Phys.   39 ( 10B )   L1046 - L1047   2000

Optical quality dependence on growth rate for metalorganic chemical vapor deposition grown GaInNAs/GaAs

Masao Kawaguchi, Tomoyuki Miyamoto, Eric Gouardes, Dietmar Schlenker, Takashi Kondo, Fumio Koyama, Kenichi Iga

Jpn. J. Appl. Phys.   39 ( 12A )   L1219 - L1220   2000

Continuous wave operation of 1.26μm GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition

Shunichi Sato, Nobuhiko Nishiyama, Tomoyuki Miyamoto, Takashi Takahashi, Naoto Jikutani, Masakazu Arai, Akihiro Matsutani, Fumio Koyama, Kenichi Iga

Electron. Lett.   36 ( 24 )   2018 - 2019   2000

Growth and optical properties of highly strained GaInAs/GaAs quantum wells on (311)B GaAs by MOCVD

Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga

J. Crystal Growth   221   530 - 534   2000

Strong enhancement of light extraction efficiency in GaInAsP 2-D-arranged microcolumns

T Baba, K Inoshita, H Tanaka, J Yonekura, M Ariga, A Matsutani, T Miyamoto, F Koyama, K Iga

JOURNAL OF LIGHTWAVE TECHNOLOGY   17 ( 11 )   2113 - 2120   1999.11

Strong enhancement of light extraction efficiency in GaInAsP 2-D-arranged microcolumns

T Baba, K Inoshita, H Tanaka, J Yonekura, M Ariga, A Matsutani, T Miyamoto, F Koyama, K Iga

JOURNAL OF LIGHTWAVE TECHNOLOGY   17 ( 11 )   2113 - 2120   1999.11

High temperature characteristics of nearly 1.2 mu m GaInAs/GaAs/AlGaAs lasers

ZB Chen, D Schlenker, T Miyamoto, T Kondo, M Kawaguchi, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   38 ( 10B )   L1178 - L1179   1999.10

High temperature characteristics of nearly 1.2 mu m GaInAs/GaAs/AlGaAs lasers

ZB Chen, D Schlenker, T Miyamoto, T Kondo, M Kawaguchi, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   38 ( 10B )   L1178 - L1179   1999.10

GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy

KAGEYAMA T., MIYAMOTO T., MAKINO S., NISHIYAMA N., KOYAMA F., IGA K.

1999   298 - 299   1999.9

Self-aligned current confinement structure using AlAs/InP tunnel junction in GaInAsP/InP semiconductor lasers

S Sekiguchi, T Miyamoto, T Kimura, F Koyama, K Iga

APPLIED PHYSICS LETTERS   75 ( 11 )   1512 - 1514   1999.9

Self-aligned current confinement structure using AlAs/InP tunnel junction in GaInAsP/InP semiconductor lasers

S Sekiguchi, T Miyamoto, T Kimura, F Koyama, K Iga

APPLIED PHYSICS LETTERS   75 ( 11 )   1512 - 1514   1999.9

Effect of surface quality on overgrowth of highly strained GaInAs/GaAs quantum wells and improvement by a strained buffer layer

D Schlenker, Z Pan, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   38 ( 9A )   5023 - 5027   1999.9

Effect of surface quality on overgrowth of highly strained GaInAs/GaAs quantum wells and improvement by a strained buffer layer

D Schlenker, Z Pan, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   38 ( 9A )   5023 - 5027   1999.9

B-10-129 Single mode fiber data transmission by using 1.2μm GaInAs/GaAs laser

Koyama F., Schlenker D., Miyamoto T., Chen Z., Matsutani A., Sakaguchi T., Iga K.

Proceedings of the Society Conference of IEICE   1999 ( 2 )   306 - 306   1999.8

1.17-mu m highly strained GaInAs-GaAs quantum-well laser

D Schlenker, T Miyamoto, Z Chen, F Koyama, K Iga

IEEE PHOTONICS TECHNOLOGY LETTERS   11 ( 8 )   946 - 948   1999.8

1.17-mu m highly strained GaInAs-GaAs quantum-well laser

D Schlenker, T Miyamoto, Z Chen, F Koyama, K Iga

IEEE PHOTONICS TECHNOLOGY LETTERS   11 ( 8 )   946 - 948   1999.8

1.2μm highly strained GaInAs/GaAs lasers and their potential application for signle mode fiber LAN

KOYAMA F., SCHLENKER D., MIYAMOTO T., CHEN Z., MATSUTANI A., SAKAGUCHI T., IGA K.

Technical report of IEICE. LQE   99 ( 173 )   1 - 6   1999.7

1.2 mu m highly strained GaInAs/GaAs quantum well lasers for singlemode fibre datalink

F Koyama, D Schlenker, T Miyamoto, Z Chen, A Matsutani, T Sakaguchi, K Iga

ELECTRONICS LETTERS   35 ( 13 )   1079 - 1081   1999.6

1.2 mu m highly strained GaInAs/GaAs quantum well lasers for singlemode fibre datalink

F Koyama, D Schlenker, T Miyamoto, Z Chen, A Matsutani, T Sakaguchi, K Iga

ELECTRONICS LETTERS   35 ( 13 )   1079 - 1081   1999.6

Long wavelength GaInAsP/InP laser with n-n contacts using AlAs/InP hole injecting tunnel junction

S Sekiguchi, T Kimura, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   38 ( 4B )   L443 - L445   1999.4

Long wavelength GaInAsP/InP laser with n-n contacts using AlAs/InP hole injecting tunnel junction

S Sekiguchi, T Kimura, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   38 ( 4B )   L443 - L445   1999.4

Thermal annealing of GaInNAs/GaAs quantum wells grown by chemical beam epitaxy and its effect on photoluminescence

T Kageyama, T Miyamoto, S Makino, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   38 ( 3B )   L298 - L300   1999.3

Thermal annealing of GaInNAs/GaAs quantum wells grown by chemical beam epitaxy and its effect on photoluminescence

T Kageyama, T Miyamoto, S Makino, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   38 ( 3B )   L298 - L300   1999.3

Quality improvement of GaInNAs/GaAs quantum well growth by metalorganic chemical vapor deposition using tertiarybutylarsine

Z Pan, T Miyamoto, D Schlenker, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   38 ( 2B )   1012 - 1014   1999.2

Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property

T Miyamoto, K Takeuchi, T Kageyama, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   197 ( 1-2 )   67 - 72   1999.2

Quality improvement of GaInNAs/GaAs quantum well growth by metalorganic chemical vapor deposition using tertiarybutylarsine

Z Pan, T Miyamoto, D Schlenker, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   38 ( 2B )   1012 - 1014   1999.2

Miscibility gap calculation for Ga1-xInxNyAs1-y including strain effects

D Schlenker, T Miyamoto, Z Pan, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   196 ( 1 )   67 - 70   1999.1

GaNAs/GaInAs short-period superlattice quantum well structures grown by MOCVD using TBAs and DMHy

T Miyamoto, S Sato, Z Pan, D Schlenker, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   195 ( 1-4 )   421 - 426   1998.12

Low temperature growth of GaInNAs/GaAs quantum wells by metalorganic chemical vapor deposition using tertiarybutylarsine

Z Pan, T Miyamoto, D Schlenker, S Sato, F Koyama, K Iga

JOURNAL OF APPLIED PHYSICS   84 ( 11 )   6409 - 6411   1998.12

Low temperature growth of GaInNAs/GaAs quantum wells by metalorganic chemical vapor deposition using tertiarybutylarsine

Z Pan, T Miyamoto, D Schlenker, S Sato, F Koyama, K Iga

JOURNAL OF APPLIED PHYSICS   84 ( 11 )   6409 - 6411   1998.12

Design considerations of GaInNAs-GaAs quantum wells: Effects of indium and nitrogen mole fractions

CK Kim, T Miyamoto, YH Lee

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   37 ( 11 )   5994 - 5996   1998.11

Design considerations of GaInNAs-GaAs quantum wells: Effects of indium and nitrogen mole fractions

CK Kim, T Miyamoto, YH Lee

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   37 ( 11 )   5994 - 5996   1998.11

Chemical Beam Epitaxy Growth of GaInNAs/GaAs Quantum Well Structures Using RF Radical Cell

KAGEYAMA T., TAKEUCHI K., MIYAMOTO T., KOYAMA F., IGA K.

Technical report of IEICE. LQE   98 ( 109 )   79 - 84   1998.6

Effect of piezo electric field on emission characteristics in GaN/AlGaN quantum wells

T Honda, T Miyamoto, T Sakaguchi, H Kawanishi, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   189 ( No. )   644 - 647   1998.6

Chemical beam epitaxy growth and characterization of GaNAs/GaAs

K Takeuchi, T Miyamoto, T Kageyama, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   37 ( 3B )   1603 - 1607   1998.3

Chemical beam epitaxy growth and characterization of GaNAs/GaAs

K Takeuchi, T Miyamoto, T Kageyama, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   37 ( 3B )   1603 - 1607   1998.3

GaInNAs/GaAs quantum well growth by chemical beam epitaxy

T Miyamoto, K Takeuchi, T Kageyama, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   37 ( 1 )   90 - 91   1998.1

GaInNAs/GaAs quantum well growth by chemical beam epitaxy

T Miyamoto, K Takeuchi, T Kageyama, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   37 ( 1 )   90 - 91   1998.1

A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers

T Miyamoto, K Takeuchi, F Koyama, K Iga

IEEE PHOTONICS TECHNOLOGY LETTERS   9 ( 11 )   1448 - 1450   1997.11

Chemical Beam Epitaxy of GaInNAs/GaAs and its Application to Long-Wavelength Surface Emitting Lasers

MIYAMOTO T., TAKEUCHI K., KOYAMA F., IGA K.

Technical report of IEICE. LQE   97 ( 100 )   55 - 60   1997.6

Auto-doping of carbon to AlAs grown by metalorganic chemical vapor deposition using trimethylaluminum and tertiarybutylarsine

S Sekiguchi, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   36 ( 5A )   2638 - 2639   1997.5

Auto-doping of carbon to AlAs grown by metalorganic chemical vapor deposition using trimethylaluminum and tertiarybutylarsine

S Sekiguchi, T Miyamoto, F Koyama, K Iga

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   36 ( 5A )   2638 - 2639   1997.5

Design of Long Wavelength GaInNAs/GaAs Quantum Well Lasers

Miyamoto T., Takada T., Takeuchi K., Koyama F., Iga K.

Proceedings of the IEICE General Conference   1997 ( 1 )   430 - 430   1997.3

Design and characterization of InAsP/InP/GaInP short-period superlattices for long-wavelength multi-quantum barrier grown by chemical beam epitaxy

TH Loh, T Miyamoto, T Takada, F Koyama, K Iga

JOURNAL OF CRYSTAL GROWTH   172 ( 3-4 )   291 - 297   1997.3

Design of 1.3μm GaInNAs/GaAs Vertical Cavity Surface Emitting Lasers

Miyamoto T, Takada T, Takeuchi K, Koyama F, Iga K

Proceedings of the Society Conference of IEICE   1996 ( 1 )   322 - 322   1996.9

Reduction of inelastic scattering effect by introduction of GaInAs/GaInP strain-compensated superlattice into multi-quantum barriers

T Loh, T Miyamoto, Y Kurita, F Koyama, K Iga

OPTICAL AND QUANTUM ELECTRONICS   28 ( 5 )   613 - 622   1996.5

REFRACTIVE-INDEX VARIATION IN GAINASP/INP QUANTUM-CONFINED STRUCTURES GROWN BY CHEMICAL BEAM EPITAXY

Y KURITA, N YOKOUCHI, T MIYAMOTO, F KOYAMA, K IGA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   34 ( 10 )   5626 - 5627   1995.10

REFRACTIVE-INDEX VARIATION IN GAINASP/INP QUANTUM-CONFINED STRUCTURES GROWN BY CHEMICAL BEAM EPITAXY

Y KURITA, N YOKOUCHI, T MIYAMOTO, F KOYAMA, K IGA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   34 ( 10 )   5626 - 5627   1995.10

STUDY OF INELASTIC-SCATTERING EFFECT IN UNSTRAINED AND STRAIN-COMPENSATED GAINAS/GAINP MULTIQUANTUM BARRIERS

T LOH, F KOYAMA, K IGA, K FURUYA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   34 ( 8B )   4511 - 4514   1995.8

STUDY OF INELASTIC-SCATTERING EFFECT IN UNSTRAINED AND STRAIN-COMPENSATED GAINAS/GAINP MULTIQUANTUM BARRIERS

T LOH, F KOYAMA, K IGA, K FURUYA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   34 ( 8B )   4511 - 4514   1995.8

STRAIN-COMPENSATED MULTIQUANTUM BARRIERS FOR REDUCTION OF ELECTRON LEAKAGES IN LONG-WAVELENGTH SEMICONDUCTOR-LASERS

T LOH, T MIYAMOTO, F KOYAMA, K IGA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   34 ( 3 )   1504 - 1505   1995.3

STRAIN-COMPENSATED MULTIQUANTUM BARRIERS FOR REDUCTION OF ELECTRON LEAKAGES IN LONG-WAVELENGTH SEMICONDUCTOR-LASERS

T LOH, T MIYAMOTO, F KOYAMA, K IGA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   34 ( 3 )   1504 - 1505   1995.3

CARRIER TRANSPORT IN P-TYPE GAINASP/INP DISTRIBUTED BRAGG REFLECTORS

T MIYAMOTO, K MORI, H MAEKAWA, Y INABA, F KOYAMA, K IGA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   33 ( 8 )   4614 - 4616   1994.8

CARRIER TRANSPORT IN P-TYPE GAINASP/INP DISTRIBUTED BRAGG REFLECTORS

T MIYAMOTO, K MORI, H MAEKAWA, Y INABA, F KOYAMA, K IGA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   33 ( 8 )   4614 - 4616   1994.8

Composition changes in GaxIn1-xAs/InP superlattice growth by chemical beam epitaxy