Updated on 2026/03/17

写真a

 
NAKATSUJI KAN
 
Organization
School of Materials and Chemical Technology Associate Professor
Title
Associate Professor
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Degree

  • Dr. of Engineering ( 1998.3   Osaka University )

Research Interests

  • Surface physics

  • Surface Science

  • synchrotron radiation

  • scanning tunneling microscopy

  • photoelectron spectroscopy

  • surface atomic structure

  • surface electronic structure

Research Areas

  • Natural Science / Semiconductors, optical properties of condensed matter and atomic physics

  • Nanotechnology/Materials / Thin film/surface and interfacial physical properties

  • Natural Science / Magnetism, superconductivity and strongly correlated systems

Education

  • Osaka University   Graduate School of Engineering Science   Division of Materials Physics, Department of Physical Science

    - 1998.3

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    Country: Japan

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  • Osaka University   School of Engineering Science

    - 1993.3

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    Country: Japan

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Research History

  • Institute of Science Tokyo   Department of Materials Science and Engineering, School of Materials and Chemical Technology   Associate Professor

    2024.10

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  • Tokyo Institute of Technology   Department of Materials Science and Engineering, School of Materials and Chemical Technology   Associate P

    2017.4 - 2024.9

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  • Tokyo Institute of Technology   Department of Materials Science and Engineering, Interdisciplinary Graduate School of Science and Engineering   Associate Professor

    2012.3 - 2017.3

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  • RIKEN   Visiting Researcher

    2006.4 - 2009.3

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  • The University of Tokyo   The Institute for Solid State Physics   Research Associate

    1998.9 - 2012.2

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  • JST CREST   postdoctral fellow

    1998.4 - 1998.9

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  • RIKEN   Junior Research Associate

    1996.10 - 1998.3

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Professional Memberships

Committee Memberships

  • 日本放射光学会   会誌編集委員  

    2024.10   

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  • 日本表面真空学会   協議員  

    2021.5   

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  • 日本表面真空学会   教育・育成委員  

    2011.4   

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    Committee type:Academic society

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  •   日本物理学会 領域9 世話人  

    2007 - 2008   

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Papers

  • Width-dependent band gap of arm-chair graphene nanoribbons formed on vicinal SiC substrates by MBE Reviewed

    Takushi Iimori, Toshio Miyamachi, Takashi Kajiwara, Kazuhiko Mase, Satoru Tanaka, Fumio Komori, Kan Nakatsuji

    Journal of Physics: Condensed Matter   35 ( 45 )   455002 - 455002   2023.8

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP Publishing  

    Abstract

    Formation and electronic states of graphene nanoribbons with arm-chair edges (AGNR) are studied on the SiC(0001) vicinal surfaces toward the [$1\bar{1}00$] direction. The surface step and terrace structures of both 4H and 6H-SiC substrates are used as the growth templates of one-dimensional arrays of AGNRs, which are prepared using the carbon molecular beam epitaxy followed by hydrogen intercalation. A band gap is observed above the π-band maximum by angle-resolved photoelectron spectroscopy (ARPES) for the both samples. The average widths of the AGNRs are 6 and 10 nm, and the estimated average band gaps are 0.40 and 0.28 eV for the 4H- and 6H- substrates, respectively. A simple and phenomenological inverse relation between the energy gap and AGNR width works in the analyses of the ARPES data.

    DOI: 10.1088/1361-648x/aced30

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    Other Link: https://iopscience.iop.org/article/10.1088/1361-648X/aced30/pdf

  • Nitrogen Adsorption on Cu(001): Mechanisms of Stress Relief and Coexistence of Two Domains Reviewed

    Masamichi Yamada, Kan Nakatsuji, Fumio Komori

    e-Journal of Surface Science and Nanotechnology   21 ( 4 )   337 - 343   2023.5

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Surface Science Society Japan  

    DOI: 10.1380/ejssnt.2023-044

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  • Structural transition at the subsurface of few-layer Bi(110) film during the growth Reviewed

    Tetsuroh Shirasawa, Wolfgang Voegeli, Etsuo Arakawa, Ryota Ushioda, Kan Nakatsuji, Hiroyuki Hirayama

    Physical Review Materials   7 ( 3 )   2023.3

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  • Growth kinetics of a perfectly flat Bi(110) film during low-temperature deposition and subsequent annealing Reviewed

    Maimi Shimura, Tetsuroh Shirasawa, Ryota Ushioda, Kan Nakatsuji, Hiroyuki Hirayama

    Surface Science   728   122210   2023.2

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    Language:English   Publisher:Elsevier BV  

    DOI: 10.1016/j.susc.2022.122210

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  • Superconductivity in a two monolayer thick indium film on Si(111)√3×√3-B Reviewed

    Takahiro Ogino, Insung Seo, Hiroo Tajiri, Masashi Nakatake, Sho-ichi Takakura, Yudai Sato, Yukio Hasegawa, Yoshihiro Gohda, Kan Nakatsuji, Hiroyuki Hirayama

    Physical Review B   106 ( 4 )   2022.7

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:American Physical Society (APS)  

    DOI: 10.1103/physrevb.106.045423

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    Other Link: http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.106.045423/fulltext

  • Local (111)-like reconstruction on highly-compressed Cu(001) regions Reviewed

    Masamichi Yamada, Kazuma Yagyu, Shinya Ohno, Takushi Iimori, Kan Nakatsuji, Fumio Komori

    Surface Science   721   122063 - 122063   2022.7

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Elsevier BV  

    DOI: 10.1016/j.susc.2022.122063

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  • Growth-rate dependence of the structural transition of bismuth islands on Si(111) substrates Reviewed

    Ryota Ushioda, Maimi Shimura, Kan Nakatsuji, Hiroyuki Hirayama

    Physical Review Materials   6 ( 4 )   2022.4

  • Bismuth Intercalation at the Graphene/Cu(111) Interface with [2012] Long-Range Ordering Reviewed

    Tsuyoshi Yamagami, Taiga Kasai, Kan Nakatsuji, Hiroyuki Hirayama

    Journal of the Physical Society of Japan   91 ( 4 )   2022.4

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Physical Society of Japan  

    DOI: 10.7566/jpsj.91.043601

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  • Electronic structure of 3 degrees-twisted bilayer graphene on 4H-SiC(0001) Reviewed

    Takushi Iimori, Anton Visikovskiy, Hitoshi Imamura, Toshio Miyamachi, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Kazuhiko Mase, Kan Nakatsuji, Satoru Tanaka, Fumio Komori

    PHYSICAL REVIEW MATERIALS   5 ( 5 )   2021.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevMaterials.5.L051001

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  • Effective quantum-well width of confined electrons in ultrathin Ag(111) films on Si(111)7 ×  7 substrates Reviewed

    Kishu Sugawara, Insung Seo, Shiro Yamazaki, Kan Nakatsuji, Yoshihiro Gohda, Hiroyuki Hirayama

    Surface Science   704   121745   2021.2

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    Abstract Ag(111) islands nucleate on a one-monolayer-thick wetting layer with an aperiodic arrangement of Ag atoms on a Si(111)7 × 7 substrate. Recent X-ray diffraction studies have revealed that the Ag wetting layer is crystallized under the Ag islands. We examined whether this wetting layer contributes to the formation of the quantum-well states (QWSs) in the Ag(111) islands by measuring the relation between the energy E of the QWSs and the height of the Ag islands w from the wetting layers using scanning tunneling microscopy and dz/dV spectroscopy. The E-w relation on the Si(111)7 × 7 substrate was found to be shifted by plus one monolayer relative to that for Ag islands on the Si(111)√3 × √3-B substrate, for which nucleation occurs directly on the substrate without the involvement of a wetting layer. The subsurface B atoms on the Si(111)√3 × √3-B substrate were confirmed not to be responsible for the shift in the E-w relation through density functional theory calculations. These results indicate that the wetting layer was incorporated into the Ag(111) islands and contributed to the formation of the QWSs as the bottom part of the crystalline Ag(111) layers.

    DOI: 10.1016/j.susc.2020.121745

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    Other Link: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17K19052/

  • Variation of the 4×1 to 8×2 structural transition temperature of quasi-one-dimensional indium chains upon carrier doping from Si(111) substrates. Reviewed International journal

    Takahiro Ogino, Valentin Motoi Kuzumo, Shiro Yamazaki, Kan Nakatsuji, Hiroyuki Hirayama

    Journal of physics. Condensed matter : an Institute of Physics journal   32 ( 41 )   415001   2020.7

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    We investigated the 4 × 1 to 8 × 2 structural transition temperature of quasi-one-dimensional indium chains on the (111) surface of Si substrates possessing various carrier concentrations via low-energy electron diffraction. The transition temperature was found to decrease from 120 K to below 77 K with increasing carrier concentration on both n- and p-type Si(111) substrates. This decrease in the transition temperature was found to be proportional to the shift of the Fermi level, which was numerically evaluated using a one-dimensional charge transfer model of the interface. The obtained results demonstrate that doping of the surface state with both electrons and holes can be readily controlled by judicious selection of Si substrates with appropriate carrier type and concentration.

    DOI: 10.1088/1361-648X/ab97e1

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    Other Link: https://iopscience.iop.org/article/10.1088/1361-648X/ab97e1/pdf

  • Growth of extremely flat Bi(110) films on a Si(111)√3 × √3-B substrate Reviewed

    Kentaro Nagase, Ryota Ushioda, Kan Nakatsuji, Tetsuroh Shirasawa, Hiroyuki Hirayama

    Applied Physics Express   13 ( 8 )   085506   2020.7

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP Publishing  

    DOI: 10.35848/1882-0786/aba0df

    DOI: 10.1088/1361-648x/ac5e06_references_DOI_UGVutvqRsxC0MBvA6Md3OzQM9fL

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    Other Link: https://iopscience.iop.org/article/10.35848/1882-0786/aba0df/pdf

  • Twisted bilayer graphene fabricated by direct bonding in a high vacuum Reviewed

    Hitoshi Imamura, Anton Visikovskiy, Ryosuke Uotani, Takashi Kajiwara, Hiroshi Ando, Takushi Iimori, Kota Iwata, Toshio Miyamachi, Kan Nakatsuji, Kazuhiko Mase, Tetsuroh Shirasawa, Fumio Komori, Satoru Tanaka

    Applied Physics Express   13 ( 7 )   075004 - 075004   2020.7

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP Publishing  

    DOI: 10.35848/1882-0786/ab99d1

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    Other Link: https://iopscience.iop.org/article/10.35848/1882-0786/ab99d1/pdf

  • Structure and growth of Bi(110) islands on Si(111)√3 ×√3-B substrates Reviewed

    Kentaro Nagase, Ikuya Kokubo, Shiro Yamazaki, Kan Nakatsuji, Hiroyuki Hirayama

    Physical Review B   97 ( 19 )   2018.5

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:American Physical Society (APS)  

    DOI: 10.1103/physrevb.97.195418

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    Other Link: http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.97.195418/fulltext

  • Surface electronic states of Au-induced nanowires on Ge(001) Reviewed International coauthorship

    Yaji Koichiro, Yukawa Ryu, Kim Sunghun, Ohtsubo Yoshiyuki, Le Fevre Patrick, Bertran Francois, Taleb-Ibrahimi Amina, Matsuda Iwao, Nakatsuji Kan, Shin Shik, Komori Fumio

    JOURNAL OF PHYSICS-CONDENSED MATTER   30 ( 7 )   2018.2

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  • X-ray structural analysis of an epitaxially grown Ag film/Si(111) √3×√3-B substrate interface Reviewed

    Y. Yoshiike, H. Tajiri, S. Yamazaki, K. Nakatsuji, H. Hirayama

    Jpn. J. Appl. Phys.   57 ( 7 )   075701 - (1-8)   2018

  • Triangular lattice atomic layer of Sn(1 × 1) at graphene/SiC(0001) interface Reviewed

    Shingo Hayashi, Anton Visikovskiy, Takashi Kajiwara, Takushi Iimori, Tetsuroh Shirasawa, Kan Nakastuji, Toshio Miyamachi, Shuhei Nakashima, Koichiro Yaji, Kazuhiko Mase, Fumio Komori, Satoru Tanaka

    Applied Physics Express   11 ( 1 )   015202 - 015202   2017.12

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP Publishing  

    DOI: 10.7567/apex.11.015202

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    Other Link: http://stacks.iop.org/1882-0786/11/i=1/a=015202?key=crossref.381207881dd6f146ca2da4417158d3e4

  • Size, shape, and number density of deposits in the graphene solution liquid droplet method Reviewed

    Yuka Takagi, Shiro Yamazaki, Kan Nakatsuji, Hiroyuki Hirayama

    Materials Today Communications   13   65 - 71   2017.12

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    Abstract The size, shape, and number density of deposits were investigated in the deposition of graphene on highly oriented pyrolytic graphite substrates by the graphene solution liquid droplet method. Block-shaped aggregates of graphene and sheet-like graphene deposits were observed. The number density of the block-shaped graphene was about 50 times larger than that of the sheet-like graphene due to the aggregation of the graphene films in the pristine graphene solution. Ultrasonication fragmented the block-shaped graphene and increased the number density of sheet-like graphene by about ten times. The remaining block-shaped graphene with heights greater than 25 nm was almost eliminated selectively by centrifugation.

    DOI: 10.1016/j.mtcomm.2017.08.009

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    Other Link: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-17K19052/

  • Interaction of Stark-shifted image potential states with quantum well states in ultrathin Ag(111) islands on Si(111)√3×√3-B substrates Reviewed

    Kishu Sugawara, Kentaro Nagase, Shiro Yamazaki, Kan Nakatsuji, Hiroyuki Hirayama

    PHYSICAL REVIEW B   96 ( 7 )   2017.8

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  • Modulation of Electron-Phonon Coupling in One-Dimensionally Nanorippled Graphene on a Macrofacet of 6H-SiC Reviewed

    Ienaga Koichiro, Iimori Takushi, Yaji Koichiro, Miyamachi Toshio, Nakashima Shuhei, Takahashi Yukio, Fukuma Kohei, Hayashi Shingo, Kajiwara Takashi, Visikovskiy Anton, Mase Kazuhiko, Nakatsuji Kan, Tanaka Satoru, Komori Fumio

    NANO LETTERS   17 ( 6 )   3527 - 3532   2017.6

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  • Electronic states of graphene on the nanofacets on the vicinal 6H-SiC(0001) surfaces II

    Iimori T., Nakatsuji K., Miyamachi T., Ienaga K., Toyohisa S., Fukuma K., Morita K., Hayashi S., Kajiwara T., Visikovsliy A., Tanaka S., Mase K., Komori F.

    Meeting Abstracts of the Physical Society of Japan   72.1   2628 - 2628   2017

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    Language:Japanese   Publisher:The Physical Society of Japan  

    DOI: 10.11316/jpsgaiyo.72.1.0_2628

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  • Electron-phonon coupling of graphene on the nanofacets on the vicinal 6H-SiC(0001) surfaces

    Iimori T., Ienaga K., Miyamachi T., Nakashima S., Takahashi F., Yaji K., Nakatsuji K., Mase K., Fukuma K., Hayashi S., Kajiwara T., Visikovsliy A., Tanaka S., Komori F.

    Meeting Abstracts of the Physical Society of Japan   72.2   2177 - 2177   2017

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    Language:Japanese   Publisher:The Physical Society of Japan  

    DOI: 10.11316/jpsgaiyo.72.2.0_2177

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  • Control of sub-2D graphene structure on SiC facets

    Fukuma Kouhei, Hayashi Shingo, Kajiwara Takashi, Visikovskiy Anton, Iimori Takushi, Ienaga Kouichirou, Yaji Kouichirou, Nakatsuji Hiroshi, Komori Fumio, Tanaka hirokazu, Kanda masanobu, Tanaka Satoru

    JSAP Annual Meetings Extended Abstracts   2016.1   3889 - 3889   2016.3

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    Language:Japanese   Publisher:The Japan Society of Applied Physics  

    DOI: 10.11470/jsapmeeting.2016.1.0_3889

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  • Si growth at graphene surfaces on 6H-SiC(0001) substrates Reviewed

    Junki Sone, Tsuyoshi Yamagami, Kan Nakatsuji, Hiroyuki Hirayama

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 3 )   035502   2016.3

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  • Ribbon-like nanopattern formed on nitrogen-adsorbed vicinal Cu(001) Reviewed

    Masamichi Yamada, Norikazu Kawamura, Kan Nakatsuji, Fumio Komori

    e-Journal of Surface Science and Nanotechnology   14   43 - 47   2016.2

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    Language:English   Publishing type:Research paper (international conference proceedings)   Publisher:Surface Science Society of Japan  

    DOI: 10.1380/ejssnt.2016.43

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  • Fabrication and characterization of graphene lateral superlattices on SiC facets (1)

    Tanaka Satoru, Fukuma Kohei, Hayashi Shingo, Kajiwara Takashi, Visikovskiy Anton, Iimori Takushi, Ienaga Koichiro, Yaji Koichiro, Nakatsuji Kan, Komori Fumio, Tanaka Hirokazu, Kanda Akinobu, Cuong Nguyen Thanh, Okada Susumu

    JSAP Annual Meetings Extended Abstracts   2015.2   3439 - 3439   2015.8

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    Language:Japanese   Publisher:The Japan Society of Applied Physics  

    DOI: 10.11470/jsapmeeting.2015.2.0_3439

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  • Fabrication and characterization of graphene lateral superlattices on SiC facets (2)

    Fukuma Kouhei, Hayashi Shingo, Kajiwara Takashi, Visikovskiy Anton, Tanaka Satoru, Iimori Takushi, Ienaga Kouichirou, Yaji Kouichirou, Nakatsuji Hiroshi, Komori Fumio, Tanaka hirokazu, Kanda masanobu, Cuong Nguyen Thanh, Okada Susumu

    JSAP Annual Meetings Extended Abstracts   2015.2   3440 - 3440   2015.8

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    Language:Japanese   Publisher:The Japan Society of Applied Physics  

    DOI: 10.11470/jsapmeeting.2015.2.0_3440

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  • Ultrathin Bi(110) films on Si(111)√3 ×√3-B substrates Reviewed

    Ikuya Kokubo, Yusaku Yoshiike, Kan Nakatsuji, Hiroyuki Hirayama

    Physical Review B   91 ( 7 )   2015.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/physrevb.91.075429

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    Other Link: http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.91.075429/fulltext

  • Scanning tunneling spectroscopy study of quasiparticle interference on the dual topological insulator Bi1-xSbx Reviewed

    Yoshizawa Shunsuke, Nakamura Fumitaka, Taskin Alexey A, Iimori Takushi, Nakatsuji Kan, Matsuda Iwao, Ando Yoichi, Komori Fumio

    PHYSICAL REVIEW B   91 ( 4 )   2015.1

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  • 21pPSB-5 Electronic states of MnN superstructure on Cu(001) surface

    Nakatsuji K., Iimori T., Takagi Y., Yokoyama T., Komori F.

    Meeting Abstracts of the Physical Society of Japan   70   2532 - 2532   2015

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    Language:Japanese   Publisher:The Physical Society of Japan (JPS)  

    DOI: 10.11316/jpsgaiyo.70.1.0_2532

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  • 24aAS-6 Two-dimensional surface states of Au-induced atomic nanowires on Ge(001)

    Yaji K., Yukawa R., Kim S., Ohtsubo Y., Le Fevre Patrick, Bertran Francois, Taleb-Ibrahimi Amina, Matsuda I., Nakatsuji K., Komori F.

    Meeting Abstracts of the Physical Society of Japan   70   2653 - 2653   2015

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    Language:Japanese   Publisher:The Physical Society of Japan (JPS)  

    DOI: 10.11316/jpsgaiyo.70.1.0_2653

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  • 16pCA-4 Angle resolved photoelectron spectroscopy on graphene on the nanofacets on the vicinal SiC(0001) surfaces

    Iimori T., Nakatsuji K., Miyamachi T., Ienaga K., Kim S., Tamura T., Toyohisa S., Fukuma K., Morita K., Kajiwara T., Hayashi S., Visikovsliy Anton, Tanaka S., Mase K., Komori F.

    Meeting Abstracts of the Physical Society of Japan   70.2   2239   2015

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    Language:Japanese   Publisher:The Physical Society of Japan  

    DOI: 10.11316/jpsgaiyo.70.2.0_2239

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  • Absence of Luttinger liquid behavior in Au-Ge wires: A high-resolution scanning tunneling microscopy and spectroscopy study Reviewed International coauthorship

    Park Jewook, Nakatsuji Kan, Kim Tae-Hwan, Song Sun Kyu, Komori Fumio, Yeom Han Woong

    PHYSICAL REVIEW B   90 ( 16 )   2014.10

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  • Surfactant role of Ag atoms in the growth of Si layers on Si(111)root 3x root 3-Ag substrates Reviewed

    Tsuyoshi Yamagami, Junki Sone, Kan Nakatsuji, Hiroyuki Hirayama

    APPLIED PHYSICS LETTERS   105 ( 15 )   2014.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.4898063

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    Other Link: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-26286048/

  • Epitaxial growth of silicene on ultra-thin Ag(111) films Reviewed

    Junki Sone, Tsuyoshi Yamagami, Yuki Aoki, Kan Nakatsuji, Hiroyuki Hirayama

    NEW JOURNAL OF PHYSICS   16 ( 9 )   095004   2014.9

  • Regular ripples at the surfaces of heteroepitaxially grown Ag(111) ultra-thin films on Si(111) root 3 x root 3-B substrates Reviewed

    Yusaku Yoshiike, Hiroyuki Fukumoto, Ikuya Kokubo, Yuki Aoki, Kan Nakatsuji, Hiroyuki Hirayama

    APPLIED PHYSICS LETTERS   104 ( 19 )   2014.5

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    DOI: 10.1063/1.4878323

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  • Fabrication and characterization of strain-driven self-assembled CrN nanoislands on Cu(001) Reviewed

    P. Krukowski, T. Iimori, K. Nakatsuji, M. Yamada, F. Komori

    Journal of Applied Physics   113 ( 17 )   2013.5

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    DOI: 10.1063/1.4803690

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  • Initial stage of Ag growth on Bi/Ag(111)√3 × √3 surfaces

    Hiroyuki Fukumoto, Masaru Miyazaki, Yuki Aoki, Kan Nakatsuji, Hiroyuki Hirayama

    Surface Science   611   49 - 53   2013.5

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    Abstract We investigated the initial stage of Ag growth on Bi/Ag(111)√3 × √3 substrates at room temperature. The nucleation of small one-monolayer-high islands on the substrates was observed by scanning tunneling microscopy (STM). The islands extended laterally and coalesced to form a continuous layer with further deposition. The growth proceeded in a layer-by-layer mode via the repeated nucleation and coalescence of monolayer islands. The top surfaces were always covered by a √3 × √3 reconstruction during this growth. dI/dV images and scanning tunneling spectra (STS) revealed that the electronic structure of the grown surfaces was identical to that of the Bi/Ag(111)√3 × √3 substrate surfaces. The surfactant action of the Bi atoms reasonably explains the layer-by-layer growth of Ag films with a √3 × √3 surface reconstruction.

    DOI: 10.1016/j.susc.2013.01.013

    DOI: 10.1103/physrevb.89.241403_references_DOI_1pNAiY79L6XyTiUur8DrBBJMhh1

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    Other Link: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-25600095/

  • Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy Reviewed

    Takashi Kajiwara, Yuzuru Nakamori, Anton Visikovskiy, Takushi Iimori, Fumio Komori, Kan Nakatsuji, Kazuhiko Mase, Satoru Tanaka

    Phys. Rev. B   87 ( 12 )   121407(R)-1 - 121407(R)-4   2013.3

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    DOI: 10.1103/PhysRevB.87.121407

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  • Selective doping in a surface band and atomic structures of the Ge(111) (root 3 x root 3)R30 degrees-Au surface Reviewed

    Nakatsuji Kan, Motomura Yuya, Niikura Ryota, Komori Fumio

    JOURNAL OF PHYSICS-CONDENSED MATTER   25 ( 4 )   2013.1

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  • Growth and structure of CrN nanoislands on Cu(001) studied by scanning tunneling microscopy and X-ray photoemission spectroscopy Reviewed

    P. Krukowski, T. Iimori, K. Nakatsuji, M. Yamada, F. Komori

    Thin Solid Films   531   251 - 254   2013

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2012.12.026

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  • Elucidation of Rh-induced In-gap states of Rh:SrTiO<inf>3</inf>visible-light-driven photocatalyst by soft X-ray spectroscopy and first-principles calculations

    Seiji Kawasaki, Kazuto Akagi, Kan Nakatsuji, Susumu Yamamoto, Iwao Matsuda, Yoshihisa Harada, Jun Yoshinobu, Fumio Komori, Ryota Takahashi, Mikk Lippmaa, Chikako Sakai, Hideharu Niwa, Masaharu Oshima, Katsuya Iwashina, Akihiko Kudo

    Journal of Physical Chemistry C   116   24445 - 24448   2012.12

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    The occupied and unoccupied in-gap electronic states of a Rh-doped SrTiO3photocatalyst were investigated by X-ray emission spectroscopy and X-ray absorption spectroscopy for different Rh impurity valence states and doping levels. An unoccupied midgap Rh4+acceptor state was found 1.5 eV below the SrTiO3conduction band minimum. Both Rh4+and Rh3+dopants were found to have an occupied donor level close to the valence band maximum of SrTiO3. The density of states obtained from first-principles calculations show that all observed spectral features can be assigned to electronic states of substitutional Rh at the Ti site and that Rh:SrTiO3is an unusual titanate compound with a characteristic p-type electronic structure. The Rh doping results in a large decrease of the bandgap energy, making Rh:SrTiO3an attractive material for use as a visible-light-driven H2-evolving photocatalyst in a solar water splitting reaction. ? 2012 American Chemical Society.

    DOI: 10.1021/jp3082529

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  • Epitaxial Rh-doped SrTiO3 thin lm photocathode for water splitting under visible light irradiation Reviewed

    S. Kawasaki, K. Nakatsuji, J. Yoshinobu, F. Komori, R. Takahashi, M. Lippmaa, K. Mase, A. Kudo

    APPLIED PHYSICS LETTERS   101   033910   2012.7

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  • Uniaxial deformation of graphene Dirac cone on a vicinal SiC substrate Reviewed

    Nakatsuji Kan, Yoshimura Tsuguo, Komori Fumio, Morita Kouhei, Tanaka Satoru

    PHYSICAL REVIEW B   85 ( 19 )   2012.5

  • Debate over dispersion direction in a Tomonaga-Luttinger-liquid system

    K. Nakatsuji, F. Komori

    NATURE PHYSICS   8 ( 3 )   174 - 174   2012.3

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  • Nanostructures made by mixing Rh atoms on N-adsorbed Cu(001) surface Reviewed

    Nakatsuji Kan, Iwasaki Yuma, Iimori Takushi, Yamada Masamichi, Komori Fumio

    SURFACE SCIENCE   605 ( 19-20 )   1818 - 1825   2011.10

  • Shape of metallic band at single-domain Au-adsorbed Ge(001) surface studied by angle-resolved photoemission spectroscopy Reviewed

    Nakatsuji Kan, Motomura Yuya, Niikura Ryota, Komori Fumio

    PHYSICAL REVIEW B   84 ( 11 )   2011.9

  • Electronic structure of Si(110)-(16 x 2) studied by scanning tunneling spectroscopy and density functional theory Reviewed

    Martin Setvin, Veronika Brazdova, David R. Bowler, Kota Tomatsu, Kan Nakatsuji, Fumio Komori, Kazushi Miki

    PHYSICAL REVIEW B   84 ( 11 )   2011.9

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    DOI: 10.1103/PhysRevB.84.115317

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  • Anisotropic splitting and spin polarization of metallic bands due to spin-orbit interaction at the Ge(111)(root 3 x root 3)R30 degrees-Au surface Reviewed

    Nakatsuji Kan, Niikura Ryota, Shibata Yuki, Yamada Masamichi, Iimori Takushi, Komori Fumio

    PHYSICAL REVIEW B   84 ( 3 )   2011.7

  • Local atomic and electronic structure of Au-adsorbed Ge(001) surfaces: Scanning tunneling microscopy and x-ray photoemission spectroscopy Reviewed

    Niikura Ryota, Nakatsuji Kan, Komori Fumio

    PHYSICAL REVIEW B   83 ( 3 )   2011.1

  • Boundaries between square-shaped, nitrogen-adsorbed islands on Cu(001): Two relief mechanism of the stress induced by atomic adsorbates Reviewed

    M. Yamada, S. Ohno, Y. Iwasaki, K. Yagyu, K. Nakatsuji, F. Komori

    Surf. Sci.   604   1961 - 1971   2010.8

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    DOI: 10.1016/j.susc.2010.08.005

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  • Polarization dependent soft X-ray emission spectroscopy of cobalt nano-islands on a nitrogen-adsorbed Cu(001) surface

    Kan Nakatsuji, Yasumasa Takagi, Yoshihide Yoshimoto, Takushi Iimori, Koichiro Yaji, Kota Tomatsu, Yoshihisa Harada, Tomoyuki Takeuchi, Takashi Tokushima, Yasutaka Takata, Shik Shin, Tetsuya Ishikawa, Fumio Komori

    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA   181 ( 2-3 )   225 - 228   2010.8

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    DOI: 10.1016/j.elspec.2010.01.007

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  • Erratum: Direct mapping of the spin-filtered surface bands of a three-dimensional quantum spin hall insulator (Physical Review B 81, 041309(R) (2010)) Reviewed

    Akinori Nishide, Alexey A. Taskin, Yasuo Takeichi, Taichi Okuda, Akito Kakizaki, Toru Hirahara, Kan Nakatsuji, Fumio Komori, Yoichi Ando, Iwao Matsuda

    Physical Review B - Condensed Matter and Materials Physics   82 ( 3 )   2010.7

  • Shape, width, and replicas of pi bands of single-layer graphene grown on Si-terminated vicinal SiC(0001)

    Kan Nakatsuji, Yuki Shibata, Ryota Niikura, Fumio Komori, Kouhei Morita, Satoru Tanaka

    PHYSICAL REVIEW B   82 ( 4 )   045428   2010.7

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    DOI: 10.1103/PhysRevB.82.045428

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  • Spin-polarized surface bands of a three-dimensional topological insulator studied by high-resolution spin- and angle-resolved photoemission spectroscopy Reviewed

    Nishide, Akinori, Takeichi, Yasuo, Okuda, Taichi, Taskin, Alexey A, Hirahara, Toru, Nakatsuji, Kan, Komori, Fumio, Kakizaki, Akito, Ando, Yoichi, Matsuda, Iwao

    NEW JOURNAL OF PHYSICS   12   2010.6

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    The spin-polarized surface band structure of the three-dimensional (3D) quantum spin Hall phase of Bi1-xSbx (x = 0.12-0.13) was studied by spin- and angle-resolved photoemission spectroscopy (SARPES) using a high-yield spin polarimeter equipped with a high-resolution electron spectrometer. The spin-integrated spectra were also measured and compared to those of Bi1-xSbx with x = 0.04. Band dispersions of the edge states were fully elucidated between the two time-reversal-invariant points, (Gamma) over bar and (M) over bar, of the (111) surface Brillouin zone. The observed spin-polarized band dispersions at x = 0.12-0.13 indicate an odd number of the band crossing at the Fermi energy, giving unambiguous evidence that this system is a 3D strong topological insulator, and determine the &#039;mirror chirality&#039; to be -1, which excludes the existence of a Dirac point in the middle of the (Gamma) over bar-(M) over bar line. The present research demonstrates that the SARPES measurement with energy resolution &lt;= 50 meV is one of the critical techniques for complementing the topological band theory for spins and spin currents.

    DOI: 10.1088/1367-2630/12/6/065011

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  • Atomic and nanostructures of monolayer c(2 x 2)NiN on Cu(001) Reviewed

    Hashimoto Yoichiro, Nakatsuji Kan, Iimori Takushi, Komori Fumio

    SURFACE SCIENCE   604 ( 3-4 )   451 - 457   2010.2

  • Direct mapping of the spin-filtered surface bands of a three-dimensional quantum spin Hall insulator Reviewed

    Akinori Nishide, Alexey A. Taskin, Yasuo Takeichi, Taichi Okuda, Akito Kakizaki, Toru Hirahara, Kan Nakatsuji, Fumio Komori, Yoichi Ando, Iwao Matsuda

    Physical Review B - Condensed Matter and Materials Physics   81 ( 4 )   2010.1

  • Local Vibrational Excitation through Extended Electronic States at a Germanium Surface Reviewed

    Tomatsu Kota, Nakatsuji Kan, Yamada Masamichi, Komori Fumio, Yan Binghai, Yam Chiyung, Frauenheim Thomas, Xu Yong, Duan Wenhui

    PHYSICAL REVIEW LETTERS   103 ( 26 )   2009.12

  • Anisotropic two-dimensional metallic state of Ge(001)c(8x2)-Au surfaces: An angle-resolved photoelectron spectroscopy Reviewed

    Nakatsuji Kan, Niikura Ryota, Shibata Yuki, Yamada Masamichi, Iimori Takushi, Komori Fumio

    PHYSICAL REVIEW B   80 ( 8 )   2009.8

  • Multiple Electronic Excitation Using Scanning Tunneling Microscopy on Ge(001) Reviewed

    Takagi Yasumasa, Tomatsu Kota, Nakatsuji Kan, Komori Fumio

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   78 ( 6 )   2009.6

  • Flip motion of heterogeneous buckled dimers on Ge(001) by electron injection from STM tip Reviewed

    Tomatsu Kota, Yan Binghai, Yamada Masamichi, Nakatsuji Kan, Zhou Gang, Duan Wenhui, Komori Fumio

    SURFACE SCIENCE   603 ( 5 )   781 - 787   2009.3

  • Dissociative adsorption of oxygen on clear Cr(001) surface Reviewed

    K. Yagyu, X. Liu, Y. Yoshimoto, K. Nakatsuji, F. Komori

    J. Phys. Chem. C   113   5541 - 5546   2009.3

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    DOI: 10.1021/jp808542z

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  • Phase transition for a 3/8-monolayer Sn-adsorbed Cu(001) bimetallic surface alloy Reviewed

    Yaji Koichiro, Nakayama Ryuichi, Nakatsuji Kan, Iimori Takushi, Komori Fumio

    PHYSICAL REVIEW B   79 ( 11 )   2009.3

  • Ordered structures of tin-adsorbed Cu(001) surfaces with over 1/2 monolayer coverage Reviewed

    Yaji Koichiro, Nakayama Ryuichi, Nakatsuji Kan, Iimori Takushi, Komori Fumio

    SURFACE SCIENCE   603 ( 2 )   341 - 348   2009.1

  • Surface restructuring process on a Ag/Ge(001) surface studied by photoelectron spectroscopy

    Kan Nakatsuji, Takushi Iimori, Yasumasa Takagi, Daiichiro Sekiba, Shunsuke Doi, Masamichi Yamada, Taichi Okuda, Ayumi Harasawa, Toyohiko Kinoshita, Fumio Komori

    APPLIED SURFACE SCIENCE   254 ( 23 )   7638 - 7641   2008.9

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    DOI: 10.1016/j.apsusc.2008.01.128

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  • Scattering potentials at Si-Ge and Sn-Ge impurity dimers on Ge(001) studied by scanning tunneling microscopy and ab initio calculations Reviewed

    Tomatsu Kota, Yamada Masamichi, Nakatsuji Kan, Komori Fumio, Yan Binghai, Wang Chenchen, Zhou Gang, Duan Wenhui

    PHYSICAL REVIEW B   78 ( 8 )   2008.8

  • Fullerene on nitrogen-adsorbed Cu(001) nanopatterned surfaces: From preferential nucleation to layer-by-layer growth Reviewed

    Lu Bin, Iimori Takushi, Sakamoto Kazuyuki, Nakatsuji Kan, Rosei Federico, Komori Fumio

    JOURNAL OF PHYSICAL CHEMISTRY C   112 ( 27 )   10187 - 10192   2008.7

  • Phase transition and electronic state modification by lattice strain in 0.5-monolayer Sn/Cu(001) Reviewed

    Yaji Koichiro, Nara Yuki, Nakatsuji Kan, Iimori Takushi, Yagyu Kazuma, Nakayama Ryuichi, Nemoto Naoki, Komori Fumio

    PHYSICAL REVIEW B   78 ( 3 )   2008.7

  • Soft X-ray emission spectroscopy of Co nanoislands on a nitrogen-adsorbed Cu(001) surface Reviewed

    Takagi Yasumasa, Nakatsuji Kan, Yoshimoto Yoshihide, Iimori Takushi, Yaji Koichiro, Tomatsu Kota, Harada Yoshihisa, Takeuchi Tomoyuki, Tokushima Takashi, Takata Yasutaka, Shin Shik, Ishikawa Tetsuya, Komori Fumio

    SURFACE SCIENCE   602 ( 12 )   L65 - L68   2008.6

  • Electron correlation effects in Co nanoscale islands on a nitrogen-covered Cu(001) surface

    Kan Nakatsuji, Yoshihide Yoshimoto, Daiichiro Sekiba, Shunsuke Doi, Takushi Iimori, Kazuma Yagyu, Yasumasa Takagi, Shin-ya Ohno, Hideharu Miyaoka, Masamichi Yamada, Fumio Komori, Kenta Amemiya, Daiju Matsumura, Toshiaki Ohta

    PHYSICAL REVIEW B   77 ( 23 )   235436   2008.6

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    DOI: 10.1103/PhysRevB.77.235436

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  • Growth and self-assembly of MnN overlayers on Cu(001) Reviewed

    Xiangdong Liu, Bin Lu, Takushi Iimori, Kan Nakatsuji, Fumio Komori

    SURFACE SCIENCE   602 ( 10 )   1844 - 1851   2008.5

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    DOI: 10.1016/j.susc.2008.03.043

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  • Comment on "Surfactant-Mediated growth revisited"

    X. -D. Liu, T. Iimori, K. Nakatsuji, F. Komori

    PHYSICAL REVIEW LETTERS   100 ( 8 )   2008.2

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  • Enhancement of optical second harmonic generation bynitrogen adsorption on Cu(001) Reviewed

    H, Sano M. Miyaoka, T., Iimori, D., Sakiba, K., Nakatsuji, W., Wolf, R., Podloucky, N., Kawamura, G., Mizutani, F., Komori, 関場, 大一郎

    Applied Surface Science   255   3289-3293   2008.1

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  • Fabrication and characterization of self-organized MnN superstructures on Cu(001) surfaces Reviewed

    Lu Bin, Liu Xiangdong, Nakatsuji Kan, Iimori Takushi, Komori Fumio

    PHYSICAL REVIEW B   76 ( 24 )   2007.12

  • STM observation of surface phases of Sn/Cu(001) Reviewed

    Nara Yuki, Yaji Koichiro, Iimori Takushi, Nakatsuji Kan, Komori Fumio

    SURFACE SCIENCE   601 ( 22 )   5170 - 5172   2007.11

  • Nanopattern formation on Cu(001) surface coadsorbed with nitrogen and oxygen Reviewed

    K. Yagyu, K. Nakatsuji, Y. Yoshimoto, S. Tsuneyuki, F. Komori

    Surf. Sci.   601   4837 - 4842   2007.8

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    DOI: 10.1016/j.susc.2007.07.023

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  • STM observation of initial growth of Sn atoms on Ge(001) surface Reviewed

    Tomatsu Kota, Nakatsuji Kan, Iimori Takushi, Komori Fumio

    SURFACE SCIENCE   601 ( 7 )   1736 - 1746   2007.4

  • Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface Reviewed

    Shirasawa Tetsuroh, Hayashi Kenjiro, Mizuno Seigi, Tanaka Satoru, Nakatsuji Kan, Komori Fumio, Tochihara Hiroshi

    PHYSICAL REVIEW LETTERS   98 ( 13 )   2007.3

  • An Atomic Seesaw Switch Formed by Tilted Asymmetric Sn-Ge Dimers on a Ge (001) Surface

    K. Tomatsu, K. Nakatsuji, T. Iimori, Y. Takagi, H. Kusuhara, A. Ishii, F. Komori

    Science   315 ( 5819 )   1696 - 1698   2007.3

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    When tin (Sn) atoms are deposited on a clean germanium (Ge) (001) surface at room temperature, buckled dimers originating from the Sn atoms are formed at the Ge-dimer position. We identified the dimer as a heterogeneous Sn-Ge dimer by reversing its buckling orientation with a scanning tunneling microscope (STM) at 80 kelvin. An atomic seesaw switch was formed for one-dimensional electronic conduction in the Ge dimer–row direction by using the STM to reversibly flip the buckling orientation of the Sn-Ge dimer and to set up standing-wave states.

    DOI: 10.1126/science.1137848

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  • Superstructure manipulation on a clean Ge(001) surface by carrier injection using an STM Reviewed

    Takagi Y, Nakatsuji K, Yoshimoto Y, Komori F

    PHYSICAL REVIEW B   75 ( 11 )   2007.3

  • Self-assembled MnN superstructure Reviewed

    Xiangdong Liu, Bin Lu, Takushi Iimori, Kan Nakatsuji, Fumio Komori

    PHYSICAL REVIEW LETTERS   98 ( 6 )   2007.2

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    DOI: 10.1103/PhysRevLett.98.066103

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  • Strain-induced change in electronic structure of Cu(100) Reviewed

    D., Sekiba, Y., Yoshimoto, K., Nakatsuji, Y., Takagi, T., Iimori, S., Doi, F., Komori

    Physical Review B   75   115404   2007.1

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  • Invasive growth of Co on (root 2x2 root 2)R45 degrees reconstructed O/Cu(001) Reviewed

    XD Liu, T Iimori, K Nakatsuji, F Komori

    APPLIED PHYSICS LETTERS   88 ( 13 )   2006.3

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    DOI: 10.1063/1.2189190

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  • Enhancement of electron correlation in Co thin clusters grown on S/GaAs (001) Reviewed

    Harasawa A, Okuda T, Wakita T, Tohyama T, Eguchi T, Nakatsuji K, Ueno N, Nath K.G, Kinoshita T

    Physical Review B - Condensed Matter and Materials Physics   73 ( 20 )   2006

  • Electronic structure of Co/N/Cu(001) surfaces

    Nakatsuji Kan, Iimori Takushi, Sekiba Daiichiro, Doi Shunsuke, Yagyu Kazuma, Takagi Yasumasa, Ohno Shin-ya, Miyaoka Hideharu, Yamada Masamichi, Amemiya Kenta, Matsumura Daiju, Ohta Toshiaki, Komori Fumio

    Abstract of annual meeting of the Surface Science of Japan   26   202 - 202   2006

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    Publisher:The Physical Society of Japan (JPS)  

    DOI: 10.14886/sssj.26.0.202.0

    CiNii Books

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  • Electronic states of the clean Ge(001) surface near Fermi energy Reviewed

    Nakatsuji K, Takagi Y, Komori F, Kusuhara H, Ishii A

    PHYSICAL REVIEW B   72 ( 24 )   2005.12

  • Nonlocal Manipulation of Dimer Motion at Ge(001) Clean Surface via Hot Carriers in Surface States

    Yasumasa Takagi, Yoshihide Yoshimoto, Kan Nakatsuji, Fumio Komori

    Journal of the Physical Society of Japan   74 ( 12 )   3143 - 3146   2005.12

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    DOI: 10.1143/jpsj.74.3143

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  • Role of a topological defect in the local structure transformation on clean Ge(001) surface by STM Reviewed

    Takagi Y, Yoshimoto Y, Nakatsuji K, Komori F

    SURFACE SCIENCE   593 ( 1-3 )   133 - 138   2005.11

  • Electronic structures of Ag/Ge(001) surfaces

    K Nakatsuji, Y Takagi, M Yamada, Y Naitoh, F Komori

    SURFACE SCIENCE   591 ( 1-3 )   108 - 116   2005.10

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    DOI: 10.1016/j.susc.2005.06.025

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  • Direct observation of strain-induced change in surface electronic structure Reviewed

    D., Sekiba, K., Nakatsuji, Y., Yoshimoto, F., Komori

    Physical Review Letters   94   16808   2005.1

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  • Reinvestigation of Co 2p satellite peak on the Co ultrathin film: Screening channel at interface Reviewed

    D., Sekiba, K., Nakatsuji, F., Komori

    Journal of the Physical Society of Japan   74   2868-2869   2005.1

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  • Effects of strain field in nitrogen-mediated Co film growth on Cu(001): segregation and electronic structure change Reviewed

    D., Sekiba, S., Doi, K., Nakatsuji, F., Komori

    Surface Science   590   138-145   2005.1

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  • Lattice deformation and strain-dependent atom processes at nitrogen-modified Cu(001) surfaces Reviewed

    Komori F, Ohno SY, Nakatsuji K

    PROGRESS IN SURFACE SCIENCE   77 ( 1-2 )   1 - 36   2004.11

  • Ground state of the Si(001) surface revisited - is seeing believing?

    T UDA, H SHIGEKAWA, Y SUGAWARA, S MIZUNO, H TOCHIHARA, Y YAMASHITA, J YOSHINOBU, K NAKATSUJI, H KAWAI, F KOMORI

    Progress in Surface Science   76 ( 6-8 )   147 - 162   2004.10

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    Publishing type:Research paper (scientific journal)   Publisher:Elsevier BV  

    DOI: 10.1016/j.progsurf.2004.05.015

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  • Reversible local-modification of surface structure on clean Ge(001) by scanning tunneling microscopy below 80 K Reviewed

    Y Takagi, Y Yoshimoto, K Nakatsuji, F Komori

    SURFACE SCIENCE   559 ( 1 )   1 - 15   2004.6

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    DOI: 10.1016/k/susc.2004.04.010

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  • Atomic-scale control of surface reconstruction on Ge(001) by scanning tunneling microscopy at 80 K Reviewed

    Takagi Y, Nakatsuji K, Yamada M, Komori F

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   43 ( 3B )   L386 - L389   2004.3

  • Rewritable nanopattern on a Ge(001) surface utilizing p(2x2)-to-c(4x2) transition of surface reconstruction induced by a scanning tunneling microscope Reviewed

    Y Takagi, M Yamada, K Nakatsuji, F Komori

    APPLIED PHYSICS LETTERS   84 ( 11 )   1925 - 1927   2004.3

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    DOI: 10.1063/1.1668324

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  • Dissociation preference of oxygen molecules on an inhomogeneously strained Cu(001) surface Reviewed

    S. Ohno, K. Yagyu, K. Nakatsuji, F. Komori

    Surf. Sci.   554   183 - 192   2004.1

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    DOI: 10.1016/j.susc.2004.01.063

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  • Local and Reversible Change of the Reconstruction on Ge(001) Surface betweenc(4×2) andp(2×2) by Scanning Tunneling Microscopy

    Yasumasa Takagi, Yoshihide Yoshimoto, Kan Nakatsuji, Fumio Komori

    Journal of the Physical Society of Japan   72 ( 10 )   2425 - 2428   2003.10

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    DOI: 10.1143/jpsj.72.2425

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  • Distribution of lattice-strain on partly nitrogen-covered Cu(001) surface Reviewed

    S. Ohno, K. Yagyu, K. Nakatsuji, F. Komori

    Surf. Sci.   547   L871 - L876   2003.10

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    DOI: 10.1016/j.susc.2003.10.025

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  • Initial growth of Fe nano-islands on Cu(001)-c(2 x 2)N surfaces Reviewed

    S Ohno, K Nakatsuji, F Komori

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   42 ( 7B )   4701 - 4705   2003.7

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    DOI: 10.1143/JJAP.42.4701

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  • Growth mechanism of Fe nanoisland array on Cu(001)-c(2 x 2)N surfaces Reviewed

    Ohno S, Nakatsuji K, Komori F

    SURFACE SCIENCE   523 ( 1-2 )   189 - 198   2003.1

  • Arrays of magnetic nanodots on nitrogen-modified Cu(001) surfaces Reviewed

    Komori F, Ohno S, Nakatsuji K

    JOURNAL OF PHYSICS-CONDENSED MATTER   14 ( 35 )   8177 - 8197   2002.9

  • One-dimensional self-organized patterns on vicinal Cu(001)-c(2x2)N Surfaces Reviewed

    S. Ohno, K. Yagyu, K. Nakatsuji, F. Komori

    Jpn. J. Appl. Phys.   41   L1243 - L1246   2002.9

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    DOI: 10.1143/JJAP.41.L1243]

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  • Correlated motion of small Ag clusters and Ge dimer-buckling on Ge(001) Reviewed

    Naitoh Y, Nakatsuji K, Komori F

    JOURNAL OF CHEMICAL PHYSICS   117 ( 6 )   2832 - 2835   2002.8

  • Formation process of very thin Ag structures on Ge(001) surface below RT Reviewed

    Y Naitoh, K Nakatsuji, F Komori

    SURFACE SCIENCE   513 ( 1 )   1 - 8   2002.7

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  • Direct evidence for itinerant magnetite above and below the Verwey transition temperature Reviewed

    YQ Cai, K Nakatsuji, S Ohno, T Iimori, M Yamada, F Komori

    SURFACE REVIEW AND LETTERS   9 ( 2 )   907 - 912   2002.4

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  • Electronic structure of Ag thin films on a Ge(001) surface

    K Nakatsuji, M Yamada, S Ohno, Y Naitoh, T Iimori, T Okuda, A Harasawa, T Kinoshita, F Komori

    SURFACE REVIEW AND LETTERS   9 ( 2 )   681 - 686   2002.4

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    DOI: 10.1142/S0218625X02002890

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  • Anomalous electro-migration of oxygen vacancies in reduced TiO2 Reviewed

    H Miyaoka, G Mizutani, H Sano, M Omote, K Nakatsuji, F Komori

    SOLID STATE COMMUNICATIONS   123 ( 9 )   399 - 404   2002

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    DOI: 10.1016/S0038-1098(02)00349-6

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  • Growth of ferromagnetic dot arrays on Cu(001)-c(2 x 2)N surfaces Reviewed

    S Ohno, K Nakatsuji, F Komori

    SURFACE SCIENCE   493 ( 1-3 )   539 - 546   2001.11

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  • Quantized conductance through iron point contacts Reviewed

    F Komori, K Nakatsuji

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   84 ( 1-2 )   102 - 106   2001.7

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  • Growth and magnetism of Co nanometer-scale dots squarely arranged on a Cu(001)-c(2X2)N surface Reviewed

    Komori F, Lee KD, Nakatsuji K, Iimori T, Cai YQ

    PHYSICAL REVIEW B   63 ( 21 )   2001.6

  • Quantized conductance through atomic-sized iron contacts at 4.2 K Reviewed

    F Komori, K Nakatsuji

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   68 ( 12 )   3786 - 3789   1999.12

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    Language:English   Publishing type:Research paper (scientific journal)  

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  • Photoinduced products in a C60 monolayer on Si(111)(√3×√3)-Ag: An STM study

    T. NAKAYAMA, J. ONOE, K. NAKATSUJI, J. NAKAMURA, K. TAKEUCHI, M. AONO

    Surface Review and Letters   06 ( 06 )   1073 - 1078   1999.12

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    Irradiation of ultraviolet-visible light onto a C 60 monolayer on [Formula: see text] resulted in a chemical reaction between adjacent C 60 molecules, as confirmed by scanning tunneling microscopy (STM) images. The major photoinduced products were double-bonded (two covalent C–C bonds between molecules) C 60 dimers and linear trimers. We also found single-bonded (single covalent bond between molecules) C 60 dimers and linear trimers, and two-dimensional C 60 oligomers as minor products. Observed atomic geometry of the nonbonding contact between a C 60 dimer (or a trimer) and a neighboring dimer (or a trimer), which are parallel to each other regarding their axes, is different from that reported between C 60 molecules in three-dimensional C 60 crystals, where there is no interaction with a substrate.

    DOI: 10.1142/s0218625x99001177

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  • Deduction of atomic orbitals in a valence band by two-dimensional angular distribution of photoelectrons

    H Daimon, M Kotsugi, K Nakatsuji, T Okuda, K Hattori

    SURFACE SCIENCE   438 ( 1-3 )   214 - 222   1999.9

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    DOI: 10.1016/S0039-6028(99)00572-5

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  • Two-dimensional band mapping of 2H-TaSe2 using a display-type photoelectron spectrometer

    Taichi Okuda, Kan Nakatsuji, Shigemasa Suga, Yasuhisa Tezuka, Shik Shin, Hiroshi Daimon

    Journal of Electron Spectroscopy and Related Phenomena   101-103   355 - 360   1999.6

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    DOI: 10.1016/s0368-2048(98)00387-9

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  • Symmetry Analysis of the Fermi Surface States of Sr2RuO4 by Display-Type Photoelectron Spectroscopy

    Okuda, Taichi, Okuda, Taichi, Kotsugi, Masato, Nakatsuji, Kan, Fujikawa, Masao, Suga, Shigemasa, Tezuka, Yasuhisa, Shin, Shik, Kasai, Masahiro, Tokura, Yoshinori, Daimon, Hiroshi

    Journal of the Physical Society of Japan   68 ( 4 )   1398 - 1403   1999.4

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    The Fermi surface of the noncuprate superconductor Sr2RuO4 has been studied in detail by two-dimensional angle resolved photoelectron spectroscopy (2D-ARPES) using a display-type electron spectrometer and a linearly polarized synchrotron radiation. The existence of the large Fermi surfaces agrees with previous band calculations and conventional ARPES measurements. From the comparison of the observed photoelectron intensity distribution of the Fermi surface with that of the simulation for atomic orbitals, the symmetry of the atomic orbitals composing the Fermi surfaces is revealed to be the dε;dxy, dyz, dzx-like in contrast to the dx2-y2-like orbital in the cuprate high-Tc super conductor. The possibility of the existence of the extended van-Hove singularity just below the Fermi level, which was suggested by recent conventional ARPES measurements, is also discussed.

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  • Two-dimensional angle-resolved resonance photoelectron spectroscopy of 1T-TaS2

    Okuda, T, Okuda, T, Daimon, H, Nakatsuji, K, Kotsugi, M, Suga, S, Tezuka, Y, Shin, S, Hasegawa, T, Kitazawa, K

    Journal of Electron Spectroscopy and Related Phenomena   88-91   287 - 292   1998.3

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    Angle-resolved photoelectron spectroscopy on IT-TaS2 has been performed in full solid angles by using a display-type hemispherical mirror analyzer. We obtained a very clear dependence of the photoelectron angular distribution (PEAD) pattern on the incident photon polarization. The difference between the observed and calculated PEAD patterns is discussed. In addition, we have investigated the effect of Ta 5p-5d resonance photoemission process on the photoelectron angular distribution patterns. Some new strong photoemission peaks were observed in the resonance photoemission condition. © 1998 Elsevier Science B.V.

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  • Symmetry analysis of the Fermi surface of Bi2Sr2CaCu2O8 by display analyzer

    Kotsugi, Masato, Daimon, Hiroshi, Daimon, Hiroshi, Nakatsuji, Kan, Okuda, Taichi, Furuhata, Takeo, Fujikawa, Masao, Takagi, Hiroshi, Tezuka, Yasuhisa, Shin, Shik, Kitahama, Katsuki, Kawai, Tomoji, Suga, Shigemasa

    Journal of Electron Spectroscopy and Related Phenomena   88-91   489 - 493   1998.3

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    We have directly observed the Fermi surface of Bi2Sr2CaCu2O8(Bi(2212)) by a display-type angle-resolved photoelectron spectrometer. The experiment was done at room temperature by using linearly-polarized synchrotron radiation (SR). The photon energy was 32 eV and the incident angle of the photon was perpendicular to the sample surface. Photoelectron angular distribution (PEAD) patterns were measured at various azimuthal angles φ from 0° to 135° in steps of 22.5°, where φ is the angle between the direction of the electric vector of the photon and the sample Cu-O bond direction. The observed shape of the Fermi surface is consistent with the band calculation by the FLAPW method [S. Massidda et al., Physica C 152 (1988) 251]. We confirmed the symmetry of the atomic orbital constituting the Fermi surface to be dx2-y2 by &#039;orbital determination by angular distribution&#039; (ODAD). © 1998 Elsevier Science B.V.

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  • Fermi surface of Sr2RuO4 studied by two-dimensional angle resolved photoelectron spectroscopy

    Okuda, Taichi, Okuda, Taichi, Daimon, Hiroshi, Kotsugi, Masato, Nakatsuji, Kan, Fujikawa, Masao, Suga, Shigemasa, Tezuka, Yasuhisa, Shin, Shik, Kasai, Masahiro, Tokura, Yoshinori

    Journal of Electron Spectroscopy and Related Phenomena   88-91   473 - 477   1998.3

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    The shape of the Fermi surface of the Sr2RuO4, the first noncuprate superconductor, has been directly observed by two-dimensional angle resolved photoelectron spectroscopy (2D-ARPES) technique using a display-type hemispherical mirror analyzer. The gross shape of the Fermi surface agrees with previous band calculations. The photoelectron angular distribution pattern of the Fermi level shows that the Fermi surface is composed of orbitals with dxy, dyz, and dzx-like symmetries which agree well with those predicted by previous band calculations and are in contrast to dx2-y2 symmetry of the high-TC superconductors. © 1998 Elsevier Science B.V.

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  • Observation of circular dichroism in angular distribution of the valence band photoelectron from Si(001) in UPS region

    K. Nakatsuji, H. Daimon, T. Furuhata, H. Takagi, M. Fujikawa, S. Suga, T. Miyahara, A. Yagishita, C.-H. Solterbeck, W. Schattke

    Journal of Electron Spectroscopy and Related Phenomena   88-91   213 - 218   1998.3

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    DOI: 10.1016/s0368-2048(97)00130-8

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  • Two-dimensional angle resolved photoelectron spectoscopy of 2H-TaSe_2

    OKUDA Taichi, NAKATSUJI K., SUGA S., TEZUKA Y., SHIN S., DAIMON H.

    Meeting Abstracts of the Physical Society of Japan   53.2.2   219   1998

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    Language:Japanese   Publisher:The Physical Society of Japan  

    DOI: 10.11316/jpsgaiyo.53.2.2.0_219_2

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  • Dichroism in Core Photoelectron Diffraction Spectra of Si(001) and Dependence on the Photon Polarization

    Peter Rennert, Angelika Chassé, Takeshi Nakatani, Kan Nakatsuji, Hiroshi Daimon, Shigemasa Suga

    Journal of the Physical Society of Japan   66 ( 2 )   396 - 400   1997.2

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    Publishing type:Research paper (scientific journal)   Publisher:Physical Society of Japan  

    DOI: 10.1143/jpsj.66.396

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  • 7p-T-2 Two-dimensional angle resolved photoeletron spectroscopy near the Femi level of Bi_2Sr_2CaCu_2O_8

    Kotsugi Masato, Daimon Hiroshi, Nakatsuji Kan, Okuda Taichi, Furuhata Takeo, Fujikawa Masao, Takagi Hiroshi, Suga Shigemasa, Tezuka Yasuhisa, Shin Shik, Kitahama Katsuki, Kawai Tomoji

    Meeting Abstracts of the Physical Society of Japan   52.2.3   673   1997

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    DOI: 10.11316/jpsgaiyo.52.2.3.0_673_1

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  • 5a-H-4 2-D ARUPS study of the surface state on Si(111)-√<3>×√<3>-Ag surface II

    Nakatsuji K., Furuhata T., Kotsugi M., Suga S., Tezuka Y., Shin S., Daimon H.

    Meeting Abstracts of the Physical Society of Japan   52.2.2   334   1997

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    DOI: 10.11316/jpsgaiyo.52.2.2.0_334_2

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  • 5a-G-12 Direct observation of Fermi surface of Sr_2RuO_4 by means of two-dimensional angle-resolved photoelectron spectroscopy

    OKUDA T., DAIMON H., NAKATSUJI K., KOTSUGI M., HUJIKAWA M., SUGA S., TEZUKA Y., SHIN S., KASAI M., TOKURA Y.

    Meeting Abstracts of the Physical Society of Japan   52.2.2   199   1997

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    DOI: 10.11316/jpsgaiyo.52.2.2.0_199_1

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  • Energy barrier for ion desorption due to discrete surface dipoles

    Takuya Yonezawa, H. Daimon, K. Nakatsuji, K. Sakamoto, S. Suga

    Surface Science   365 ( 2 )   489 - 494   1996.9

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    DOI: 10.1016/0039-6028(96)00628-0

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  • Adsorption and desorption processes of Cl on a Si(100) surface

    K Nakatsuji, K Matsuda, T Yonezawa, H Daimon, S Suga

    SURFACE SCIENCE   363 ( 1-3 )   321 - 325   1996.8

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    DOI: 10.1016/0039-6028(96)00154-9

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  • Electron- and photon-stimulated desorption of the NO/Si(111) surface

    K Sakamoto, K Nakatsuji, H Daimon, T Yonezawa, S Suga, H Namba, T Ohta

    Surface Science   359 ( 1-3 )   147 - 154   1996.7

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    DOI: 10.1016/0039-6028(96)00346-9

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  • Photon-stimulated desorption study of the NO/Si(111) surface Reviewed

    K Sakamoto, K Nakatsuji, H Daimon, T Yonezawa, S Suga, H Namba, T Ohta

    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA   80   125 - 128   1996.5

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    DOI: 10.1016/0368-2048(96)02938-6

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  • Two dimensional angle resolved resonant photoemission study of the 1T-TaS_2

    Okuda T., Nakatsuji K., Suga S., Tezuka Y., Shin S., Hasegawa T., Kitazawa K., Daimon H.

    Meeting Abstracts of the Physical Society of Japan   1996.2   262   1996

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    DOI: 10.11316/jpsgaiyoj.1996.2.0_262_1

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  • 30a-PS-1 Two dimensional photoelectron spectroscopy using sychrotron radiation.

    Okuda T., Nakatani T., Nakatsuji K., Shinoda J., Muro T., Daimon H., Suga S., Tezuka Y., Shin S.

    Meeting Abstracts of the Physical Society of Japan   1995.2   509   1995

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    DOI: 10.11316/jpsgaiyoj.1995.2.0_509_2

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  • Adsorption and desorption processes of Cl on a Si (111) 7 × 7 surface

    T. Yonezawa, H. Daimon, K. Nakatsuji, K. Sakamoto, S. Suga

    Applied Surface Science   79-80   95 - 99   1994.5

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    DOI: 10.1016/0169-4332(94)90394-8

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  • Photon-Stimulated Desorption Mechanism of Cl+Ions from Cl/Si(111) Surface

    Takuya Yonezawa Takuya Yonezawa, Hiroshi Daimon Hiroshi Daimon, Kan Nakatsuji Kan Nakatsuji, Kazuyuki Sakamoto Kazuyuki Sakamoto, Shigemasa Suga Shigemasa Suga, Hidetoshi Namba Hidetoshi Namba, Toshiaki Ohta Toshiaki Ohta

    Japanese Journal of Applied Physics   33 ( 4S )   2248 - 2248   1994.4

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    Photon-stimulated desorption (PSD) of Cl+ions from a Cl/Si(111) surface was studied using synchrotron radiation. The kinetic energy distribution of Cl+ions in PSD agreed with our previous results of electron-stimulated desorption (ESD). The excitation energy threshold of Cl+desorption also agreed within the experimental error. Hence, the desorption mechanisms in both PSD and ESD were considered to be the same. We studied the excitation (photon) energy dependence of the Cl+yield more precisely than ESD to elucidate the excitation mechanism for ion desorption. We found that the lower threshold photon energy was 17eV. Comparison with the ultraviolet photoelectron spectroscopy (UPS) spectrum showed that this energy corresponded to the excitation from the Cl 3s state to the Fermi level. Hence, this PSD process was explained by the KF model, where the Cl 3s core hole was filled by electrons of the Cl-Si bond through the Auger-like process, and then Cl+ions desorbed by repulsive Coulomb force from the adjacent Si+.

    DOI: 10.1143/jjap.33.2248

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  • Electron-stimulated desorption (ESD) of the O2/Si(111) surface Reviewed

    Sakamoto Kazuyuki, Nakatsuji Kan, Daimon Hiroshi, Yonezawa Takuya, Suga Shigemasa

    SURFACE SCIENCE   306   93 - 98   1994.4

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    DOI: 10.1016/0039-6028(94)91189-4

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MISC

  • The Electronic state of the initial stage of hydrogen intercalation into the buffer layer on the SiC substrate.

    飯盛拓嗣, 田中夏帆, 片野達貴, 加賀大暉, 小澤健一, 間瀬一彦, VISIKOVSKIY Anton, 田中悟, 小森文夫, 中辻寛

    日本物理学会講演概要集(CD-ROM)   79 ( 2 )   2024

  • Fabrication and structural analysis of 1D ripple graphene on 4H-SiC m-face.

    今村均, VISIKOVSKIY Anton, 碇智徳, 飯盛拓嗣, 中辻寛, 小森文夫, 田中悟

    日本物理学会講演概要集(CD-ROM)   79 ( 1 )   2024

  • Si(111)√3×√3-Ag基板上のBi超薄膜の表面構造と電子状態

    織田孝幸, 長尾俊佑, 笹川直希, 大内拓実, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛

    日本物理学会講演概要集(CD-ROM)   79 ( 1 )   2024

  • The Electronic Structure of Graphene on 1D-rippled SiC m-Face.

    飯盛拓嗣, 今村均, 片野達貴, SEO Insung, 小澤健一, 間瀬一彦, VISIKOVSKIY Anton, 田中悟, 小森文夫, 中辻寛

    日本物理学会講演概要集(CD-ROM)   79 ( 1 )   2024

  • Electronic states of Alloying Pd ultra thin films on Cu(001)

    河添理央, 片野達貴, 大島尚樹, 加賀大暉, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛

    日本物理学会講演概要集(CD-ROM)   79 ( 1 )   2024

  • Si(111)√3×√3-Ag表面上Bi(110)超薄膜の電子状態

    長尾俊佑, 大内拓実, 瓜生瞳美, 織田孝幸, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛

    日本物理学会講演概要集(CD-ROM)   78 ( 1 )   2023

  • Intercalation of Fe atoms into graphene on SiC(0001)

    竹村晃一, 片野達貴, 河添理央, SEO Insung, 飯盛拓嗣, 小森文夫, 小澤健一, 間瀬一彦, 合田義弘, 平山博之, 中辻寛

    日本物理学会講演概要集(CD-ROM)   78 ( 1 )   2023

  • Atomic structure of (Bi,In)/Si(111) surface

    瓜生瞳美, 長尾俊祐, 平山博之, 中辻寛

    日本物理学会講演概要集(CD-ROM)   78 ( 1 )   2023

  • Electronic Structure on the Twisted Bi-layer Graphenes with Less Than 1 degree on on the SiC surafaces.

    飯盛拓嗣, 今村均, 宮町俊生, 中辻寛, 北村未歩, 堀場弘司, 間瀬一彦, VISIKOVSKIY Anton, 田中悟, 小森文夫

    日本物理学会講演概要集(CD-ROM)   78 ( 1 )   2023

  • Observation of the buried interface under the ultrathin In film on the Si(111)7×7 substrate; Revisit

    笹川直希, 板倉悠太, 木崎京香, 中辻寛, 平山博之

    日本物理学会講演概要集(CD-ROM)   77 ( 1 )   2022

  • Electronic Structure on the Twisted Bi-layer Graphenes with Less Than 1 degree on on the SiC surafaces.

    飯盛拓嗣, 今村均, 宮町俊生, 中辻寛, 北村未歩, 堀場弘司, 間瀬一彦, VISIKOVSKIY Anton, 田中悟, 小森文夫

    日本物理学会講演概要集(CD-ROM)   77 ( 1 )   2022

  • Formation and electronic structure of Cu(001)c(4×2)-Bi surface

    森井七生, 永友慶, 竹村晃一, 河添理央, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛

    日本物理学会講演概要集(CD-ROM)   77 ( 1 )   2022

  • Si(111)√3×√3-B表面上のBi(110)超薄膜の電子状態における基板依存性

    大内拓実, 長尾俊祐, 中村玲雄, 竹村晃一, 志村舞望, 潮田亮太, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛

    日本物理学会講演概要集(CD-ROM)   77 ( 1 )   2022

  • The electronic structure of PdCu surface alloy and the effect of hydrogen exposure

    永友慶, 森井七生, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛

    日本物理学会講演概要集(CD-ROM)   77 ( 1 )   2022

  • Formation of extremely flat Black-Phosphorus like Bi(110) ultrathin films by the two step growth

    志村舞望, 潮田亮太, 中辻寛, 平山博之

    日本物理学会講演概要集(CD-ROM)   77 ( 1 )   2022

  • SiC基板‐グラフェン界面に形成したスズ単原子層の電子状態

    小森文夫, 飯盛拓嗣, 宮町俊生, 矢治光一郎, 中島修平, 林信吾, VISIKOVSKY Anton, 梶原隆司, 中辻寛, 白澤徹郎, 間瀬一彦, 間瀬一彦, 田中悟

    KEK Progress Report (Web)   ( 2018-7 )   ROMBUNNO.262 (WEB ONLY)   2018.12

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  • Si(111)√3×√3-B基板上のAg(111)超薄膜のSTM像に現れる埋もれた界面構造 Invited Reviewed

    福元博之, 吉池雄作, 田尻 寛男, 山崎詩郎, 中辻寛, 平山博之

    表面と真空   61   657 - 662   2018

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  • 6H-SiC基板のマクロファセットにできた1次元ナノリップルグラフェンの電子状態と電子格子相互作用

    小森文夫, 家永紘一郎, 飯盛拓嗣, 矢治光一郎, 宮町俊生, 中島修平, 高橋文雄, 福間洸平, 林信吾, 梶原隆司, VISIKOVSLIY Anton, 間瀬一彦, 間瀬一彦, 中辻寛, 田中悟

    KEK Progress Report (Web)   ( 2017-10 )   2017

  • 22aAJ-4 Atomic and electronic structures of graphene on the nanofacets formed on vicinal SiC(0001) substrates

    Iimori T, Visikovsliy Anton, Mase K, Tanaka S, Komori F, Nakatsuji K, Ienaga K, Miyamachi T, Yaji K, Fukuma K, Morita K, Hayashi S, Kajiwara T

    Meeting Abstracts of the Physical Society of Japan   71 ( 0 )   2625 - 2625   2016

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    Language:Japanese   Publisher:一般社団法人 日本物理学会  

    DOI: 10.11316/jpsgaiyo.71.1.0_2625

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  • Growth of Epitaxial Graphene and Its Electronic Structures

    TANAKA SATORU, NAKATSUJI KAN, KOMORI FUMIO, HIBINO HIROKI

    54 ( 6 )   386 - 391   2012.10

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  • 角度分解光電子分光によるFeSi (001) およびCoSi (001) の価電子帯構造の研究

    武市 泰男, 西出 聡悟, 中辻 寛, 奥田 太一, 森 文夫, 吉信 淳, 近藤 寛, 松田 巌, BERTRAN F, FEVRE P. Le, TALEB-IBRAHIMI A, 山上 浩志, 柿崎 明人

    放射光   23 ( 2 )   115 - 116   2010.3

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  • Electronic States of Co Nano-islands on a Nitrogen-covered Cu(001) Surface

    中辻寛, 高木康多, 吉本芳英, 関場大一郎, 飯盛拓嗣, 小森文夫

    表面科学   30 ( 9 )   524-531 (J-STAGE)   2009

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  • Electron Transport Control by Electron and Hole Injection from a STM Tip

    TOMATSU Kota, NAKATSUJI Kan, KOMORI Fumio

    Materia Japan   47 ( 12 )   649 - 649   2008.12

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    Language:Japanese   Publisher:The Japan Institute of Metals and Materials  

    DOI: 10.2320/materia.47.649

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  • Lattice Strain and Related Phenomena on Metal Surfaces

    SEKIBA Daiichiro, YOSHIMOTO Yoshihide, NAKATSUJI Kan, KOMORI Fumio

    Shinku   51 ( 5 )   285 - 290   2008.5

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    Language:Japanese   Publisher:The Vacuum Society of Japan  

    We have studied the electronic structure of the partially N-adsorbed Cu(100) surface, where a lattice contraction is spontaneously induced on the clean Cu region. As a result, an increase of the d-band width due to the lattice constant reduction on the clean Cu region was experimentally confirmed. The shift of the sp-state above the Fermi level was also observed. The experimental facts were well reproduced by first-principles calculations for the strained Cu(100) surface. An interpretation of the strain-induced change on the surface electronic structure in terms of tight-binding model, suggested here, will be useful to discuss the surface chemical reaction change due to the lattice strain.<br>

    DOI: 10.3131/jvsj2.51.285

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    Other Link: https://jlc.jst.go.jp/DN/JALC/00314647519?from=CiNii

  • Remote Atom Manipulation through Propagation of Carriers Injected by Tunneling

    小森文夫, 高木康多, 中辻寛, 吉本芳英

    固体物理   42 ( 1 )   19-27,HYOSHI   2007.1

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  • SiON ultrathin film epitaxially grown on SiC(0001)

    Shirasawa Tetsuroh, Hayashi Kenjiro, Nakatsuji Kan, Sakamoto Kazuyuki, Mizuno Seigi, Komori Fumio, Tanaka Satoru, Tochihara Hiroshi

    Abstract of annual meeting of the Surface Science of Japan   27 ( 0 )   171 - 171   2007

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    Language:Japanese   Publisher:The Surface Science Society of Japan  

    SiCは次世代半導体材料として近年特に注目されている。重要な開発課題の1つが良質な絶縁膜及び界面の作製である。本研究ではSiC(0001)上に秩序SiON超薄膜がエピタキシャル成長することを見出し、その結晶構造と電子状態を調べた。その結果、膜中と界面にダングリングボンドはなく、界面準位も存在しないことが明らかになった。SiCの界面問題の解消に非常に重要な物質となることが期待される。

    DOI: 10.14886/sssj.27.0.171.0

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  • Non-local Excitation of Phase Transition by Tunneling Carriers Injected to Surface States

    高木康多, 中辻寛, 小森文夫

    日本物理学会誌   61 ( 3 )   176 - 180   2006.3

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    J-GLOBAL

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  • Control of the Surface Superstructures on the Ge(001) Clean Surface

    中辻寛, 高木康多, 吉本芳英, 小森文夫

    表面科学   26 ( 6 )   315 - 321   2005.6

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  • 2次元角度分解光電子分光によるBi(2212)のFermi面のODAD(Orbital Determination by Angular Distribution)

    小嗣真人, 大門寛, 中辻寛, 奥田太一, 古畑武夫, 手塚泰久, 辛埴, 北浜克き, 川合知二

    日本放射光学会年会・放射光科学合同シンポジウム予稿集   11th   1998

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Presentations

  • The Electronic Structure of Graphene on 1D-rippled SiC m-Face.

    飯盛拓嗣, 今村均, 片野達貴, SEO Insung, 小澤健一, 間瀬一彦, VISIKOVSKIY Anton, 田中悟, 小森文夫, 中辻寛

    日本物理学会講演概要集(CD-ROM)  2024 

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    Event date: 2024

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  • In situ observations of hydrogen absorption in Pd/Ni thin film heterostructures by ambient pressure hard x-ray photoelectron spectroscopy

    筒井健三郎, 小野広喜, 河添理央, 山本航平, 石山修, SEO Okkyun, 中辻寛, 高木康多, 横山利彦, 水口将輝, 水口将輝, 宮町俊生, 宮町俊生

    応用物理学会春季学術講演会講演予稿集(CD-ROM)  2024 

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    Event date: 2024

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  • The Electronic state of the initial stage of hydrogen intercalation into the buffer layer on the SiC substrate.

    飯盛拓嗣, 田中夏帆, 片野達貴, 加賀大暉, 小澤健一, 間瀬一彦, VISIKOVSKIY Anton, 田中悟, 小森文夫, 中辻寛

    日本物理学会講演概要集(CD-ROM)  2024 

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    Event date: 2024

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  • Electronic states of Alloying Pd ultra thin films on Cu(001)

    河添理央, 片野達貴, 大島尚樹, 加賀大暉, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛

    日本物理学会講演概要集(CD-ROM)  2024 

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  • Si(111)√3×√3-Ag基板上のBi超薄膜の表面構造と電子状態

    織田孝幸, 長尾俊佑, 笹川直希, 大内拓実, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛

    日本物理学会講演概要集(CD-ROM)  2024 

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  • Fabrication and structural analysis of 1D ripple graphene on 4H-SiC m-face.

    今村均, VISIKOVSKIY Anton, 碇智徳, 飯盛拓嗣, 中辻寛, 小森文夫, 田中悟

    日本物理学会講演概要集(CD-ROM)  2024 

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  • Intercalation of Fe atoms into graphene on SiC(0001)

    竹村晃一, 片野達貴, 河添理央, SEO Insung, 飯盛拓嗣, 小森文夫, 小澤健一, 間瀬一彦, 合田義弘, 平山博之, 中辻寛

    日本物理学会講演概要集(CD-ROM)  2023 

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    Event date: 2023

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Electronic Structure on the Twisted Bi-layer Graphenes with Less Than 1 degree on on the SiC surafaces.

    飯盛拓嗣, 今村均, 宮町俊生, 中辻寛, 北村未歩, 堀場弘司, 間瀬一彦, VISIKOVSKIY Anton, 田中悟, 小森文夫

    日本物理学会講演概要集(CD-ROM)  2023 

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  • Si(111)√3×√3-Ag表面上Bi(110)超薄膜の電子状態

    長尾俊佑, 大内拓実, 瓜生瞳美, 織田孝幸, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛

    日本物理学会講演概要集(CD-ROM)  2023 

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  • Atomic structure of (Bi,In)/Si(111) surface

    瓜生瞳美, 長尾俊祐, 平山博之, 中辻寛

    日本物理学会講演概要集(CD-ROM)  2023 

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  • Electronic structure of In ultrathin films adsorbed on Si(111)√3×√3-B surfaces International conference

    Insung Seo, Kan Nakatsuji, Hiroyuki Hirayama, Yoshihiro Gohda

    European Conference on Surface Science 35  2022.8 

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    Event date: 2022.8 - 2022.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Esch-sur-Alzette  

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  • Si(111)√3×√3-B表面上のBi(110)超薄膜の電子状態における基板依存性

    大内拓実, 長尾俊祐, 中村玲雄, 竹村晃一, 志村舞望, 潮田亮太, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛

    日本物理学会講演概要集(CD-ROM)  2022 

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  • Formation of extremely flat Black-Phosphorus like Bi(110) ultrathin films by the two step growth

    志村舞望, 潮田亮太, 中辻寛, 平山博之

    日本物理学会講演概要集(CD-ROM)  2022 

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    Event date: 2022

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Observation of the buried interface under the ultrathin In film on the Si(111)7×7 substrate; Revisit

    笹川直希, 板倉悠太, 木崎京香, 中辻寛, 平山博之

    日本物理学会講演概要集(CD-ROM)  2022 

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    Event date: 2022

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Electronic Structure on the Twisted Bi-layer Graphenes with Less Than 1 degree on on the SiC surafaces.

    飯盛拓嗣, 今村均, 宮町俊生, 中辻寛, 北村未歩, 堀場弘司, 間瀬一彦, VISIKOVSKIY Anton, 田中悟, 小森文夫

    日本物理学会講演概要集(CD-ROM)  2022 

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  • Formation and electronic structure of Cu(001)c(4×2)-Bi surface

    森井七生, 永友慶, 竹村晃一, 河添理央, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛

    日本物理学会講演概要集(CD-ROM)  2022 

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    Language:Japanese   Presentation type:Oral presentation (general)  

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  • The electronic structure of PdCu surface alloy and the effect of hydrogen exposure

    永友慶, 森井七生, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛

    日本物理学会講演概要集(CD-ROM)  2022 

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    Event date: 2022

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Electron-phonon coupling of graphene on the nanofacets on the vicinal 6H-SiC(0001) surfaces

    Iimori T, Hayashi S, Kajiwara T, Visikovsliy A, Tanaka S, Komori F, Ienaga K, Miyamachi T, Nakashima S, Takahashi F, Yaji K, Nakatsuji K, Mase K, Fukuma K

    Meeting Abstracts of the Physical Society of Japan  2017  The Physical Society of Japan

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    Event date: 2017

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  • Control of sub-2D graphene structure on SiC facets

    Fukuma Kouhei, Hayashi Shingo, Kajiwara Takashi, Visikovskiy Anton, Iimori Takushi, Ienaga Kouichirou, Yaji Kouichirou, Nakatsuji Hiroshi, Komori Fumio, Tanaka hirokazu, Kanda masanobu, Tanaka Satoru

    JSAP Annual Meetings Extended Abstracts  2016.3  The Japan Society of Applied Physics

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    Event date: 2016.3

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  • Electronic States on graphene on the nanofacets on the vicinal 6H-SiC(0001) surfaces

    Iimori T., Nakatsuji K., Miyamachi T., Ienaga K., Toyohisa S., Fukuma K., Morita K., Hayashi S., Kajiwara T., Visikovsliy A., Tanaka S., Mase K., Komori F.

    Meeting Abstracts of the Physical Society of Japan  2016  The Physical Society of Japan

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    Event date: 2016

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • 22aAJ-4 Atomic and electronic structures of graphene on the nanofacets formed on vicinal SiC(0001) substrates

    Iimori T, Visikovsliy Anton, Mase K, Tanaka S, Komori F, Nakatsuji K, Ienaga K, Miyamachi T, Yaji K, Fukuma K, Morita K, Hayashi S, Kajiwara T

    Meeting Abstracts of the Physical Society of Japan  2016  一般社団法人 日本物理学会

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  • SiCファセット上のグラフェン横方向超格子の形成と物性(1)

    田中悟, 福間洸平, 林真吾, 梶原隆司, Visikovskiy,Anton, 飯盛拓嗣, 家永紘一郎, 矢治光一郎, 中辻寛, 小森文夫, 田中宏和, 神田,晶申, Cuong,Nguyen Thanh, 岡田晋

    第76回応用物理学会秋季学術講演会 講演予稿集  2015.9 

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    Event date: 2015.9

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  • SiCファセット上のグラフェン横方向超格子の形成と物性(2)

    福間洸平, 林真吾, 梶原隆司, Visikovskiy,Anton, 田中悟, 飯盛拓嗣, 家永紘一郎, 矢治光一郎, 中辻寛, 小森文夫, 田中宏和, 神田,晶申, Cuong,Nguyen Thanh, 岡田晋

    第76回応用物理学会秋季学術講演会 講演予稿集  2015.9 

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  • Quasi-one-dimensional graphene nanostructure on corrugated SiC surfaces International conference

    S.,Tanaka, K.,Fukuma, K.,Morita, S.,Hayashi, T.,Kajiwara, A.,Visikovskiy, T.,Iimori, K.,Ienaga, K.,Yaji, K.,Nakatsuji, F.,Komori, H.,Tanaka, Kanda,Akinobu, N.,T. Cuong, S.,Okada

    Joint Conference EP2DS-M21/MSS-17 Abstracts  2015.7 

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    Event date: 2015.7

    Language:English   Presentation type:Oral presentation (general)  

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  • Electron Transport in Graphene Nanoribbons Placed on a Corrugated SiC Surface

    H.,Tanaka, K.,Fukuma, K.,Morita, S.,Hayashi, T.,Kajiwara, A.,Visikovskiy, T.,Iimori, K.,Ienaga, K.,Yaji, K.,Nakatsuji, F.,Komori, N.,T. Cuong, S.,Okada, S.,Tanaka, Kanda,Akinobu

    Joint Conference EP2DS-M21/MSS-17 Abstracts  2015.7 

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  • 16pCA-4 Angle resolved photoelectron spectroscopy on graphene on the nanofacets on the vicinal SiC(0001) surfaces

    Iimori T., Nakatsuji K., Miyamachi T., Ienaga K., Kim S., Tamura T., Toyohisa S., Fukuma K., Morita K., Kajiwara T., Hayashi S., Visikovsliy Anton, Tanaka S., Mase K., Komori F.

    Meeting Abstracts of the Physical Society of Japan  2015  The Physical Society of Japan

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    Event date: 2015

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  • 21pPSB-51 Electronic states of monolayer graphene on a facet of vicinal SiC surface

    Iimori T., Nakatsuji K., Miyamachi T., Kim S., Tamura T., Morita K., Kajiwara T., Visikovsliy Anton, Tanaka S., Mase K., Komori F.

    Meeting Abstracts of the Physical Society of Japan  2015  The Physical Society of Japan (JPS)

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  • 21pPSB-5 Electronic states of MnN superstructure on Cu(001) surface

    Nakatsuji K., Iimori T., Takagi Y., Yokoyama T., Komori F.

    Meeting Abstracts of the Physical Society of Japan  2015  The Physical Society of Japan (JPS)

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  • 24aAS-6 Two-dimensional surface states of Au-induced atomic nanowires on Ge(001)

    Yaji K., Yukawa R., Kim S., Ohtsubo Y., Le Fevre Patrick, Bertran Francois, Taleb-Ibrahimi Amina, Matsuda I., Nakatsuji K., Komori F.

    Meeting Abstracts of the Physical Society of Japan  2015  The Physical Society of Japan (JPS)

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    Event date: 2015

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  • 8aAS-8 Width Dependent Electronic States on Graphene Nano-Ribbons on the Vicinal SiC Surfaces

    Iimori T., Nakatsuji K., Miyamachi T., Kim S., Tamura T., Kajiwara T., Visikovsliy Anton, Tanaka S., Mase K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2014.8  The Physical Society of Japan (JPS)

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    Event date: 2014.8

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  • 28pPSA-76 Electronic States in MBE grown Graphene Nano-Ribon on Vicinal SiC(0001) surfaces

    Iimori T., Nakatsuji K., Miyamachi T., Kim S., Kajiwara T., Visikovsliy Anton, Tanaka S., Mase M., Komori F.

    Meeting abstracts of the Physical Society of Japan  2014.3  The Physical Society of Japan (JPS)

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    Event date: 2014.3

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  • Electronic States in MBE grown Graphene Nano-Ribon

    Iimori T., Nakatsuji K., Kim S., Kajiwara T., Visikovsliy Anton, Tanaka S., Komori F.

    Meeting abstracts of the Physical Society of Japan  2013.8  The Physical Society of Japan (JPS)

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  • 26aXZA-8 Formation of N-Cr ultra-thin films on Cu(001) surfaces II

    Krukowski Pawel, Nakatsuji K., Iimori T., Komori F.

    Meeting abstracts of the Physical Society of Japan  2013.3  The Physical Society of Japan (JPS)

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  • 27aXK-1 π electronic states of graphene nanoribbons grown on vicinal SiC substrates

    Nakatsuji K., Iimori T., Kim S., Yoshimura T., Kajiwara T., Visikovsliy Anton, Tanaka S., Komori F.

    Meeting abstracts of the Physical Society of Japan  2013.3  The Physical Society of Japan (JPS)

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  • 20pPSA-45 Structure of carbon-rich SiC(0001)-(√3x√3) surface investigated by LEED I-V analysis

    VISIKOVSKIY Anton, KAJIWARA Takashi, TANAKA Satoru, NAKATSUJI Kan, YOSHIZAWA Shinsuke, KOMORI Fumio

    Meeting abstracts of the Physical Society of Japan  2012.8  The Physical Society of Japan (JPS)

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  • 19aEC-1 Electronic States in MBE Graphene on Vicinal SiC Surfaces

    Iimori Takushi, Yoshimura Tsuguo, Motomura Yuya, Yamada Masamichi, Nakatsuji Kan, Kajiwara Takashi, Visikovsliy Anton, Tanaka Satoru, Komori Fumio

    Meeting abstracts of the Physical Society of Japan  2012.8  The Physical Society of Japan (JPS)

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  • 20pPSA-38 D-band, G-band Raman spectroscopic properties of epitaxial graphene

    Nakamori Yuzuru, Kajiwara Takashi, Visikovskiy Anton, Tanaka Satoru, Nakatsuji Hiroshi, Komori Fumio

    Meeting abstracts of the Physical Society of Japan  2012.8  The Physical Society of Japan (JPS)

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  • 19aFE-8 In situ observation of forming nanostructures of c(2x2)N on Cu(001)

    Kawamura N., Iimori T., Yamada M., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2012.8  The Physical Society of Japan (JPS)

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  • 19aFE-6 Ribbon-like alignment of N-adsorbed islands on vicinal Cu(001)

    Yamada M., Kawamura N., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2012.8  The Physical Society of Japan (JPS)

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  • 25pCK-5 Scanning Tunneling Spectroscopy on Co-deposited Bi_<1-x>Sb_x (111) Surface

    Yoshizawa S., Nakamura F., Iimori T., Nakatsuji K., Taskin Alexey A., Ando Y., Matsuda I., Komori F.

    Meeting abstracts of the Physical Society of Japan  2012.3  The Physical Society of Japan (JPS)

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  • 26pPSB-15 Micro-Raman spectroscopy on graphene nanostructures

    Nakamori Y., Kajihara T., Hagihara Y., Kurisu Y., Tanaka S., Nakatsuji K., Komori F., Hashimoto A.

    Meeting abstracts of the Physical Society of Japan  2012.3  The Physical Society of Japan (JPS)

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  • 26pPSB-46 LEED observation of forming nanostructures of c(2x2)N on Cu(001)

    Kawamura N., Iimori T., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2012.3  The Physical Society of Japan (JPS)

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  • 26pSB-13 π electronic states of graphene grown on vicinal SiC substrates studied by time-resolved photoelectron spectroscopy

    Nakatsuji K., Iimori T., Yoshimura T., Ishida Y., Yamamoto T., Shin S., Kanai T., Watanabe S., Kurisu Y., Kajiwara T., Tanaka S., Komori F.

    Meeting abstracts of the Physical Society of Japan  2012.3  The Physical Society of Japan (JPS)

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  • 26pSB-12 Electronic states of hydrogenated graphene grown on vicinal SiC substrates

    Yoshimura T., Nakatsuji K., Kajiwara T., Takagi K., Tanaka S., Komori F.

    Meeting abstracts of the Physical Society of Japan  2012.3  The Physical Society of Japan (JPS)

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  • 24pCC-1 Variation of vicinal Ge(111) atomic structure depending on Au coverage

    Motomura Y., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2012.3  The Physical Society of Japan (JPS)

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  • 26pPSB-25 Formation of N-Cr ultra-thin films on Cu(001) surfaces

    Krukowski Pawel, Nakatsuji K., Iimori T., Komori F.

    Meeting abstracts of the Physical Society of Japan  2012.3  The Physical Society of Japan (JPS)

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  • 26pPSB-24 Simple, versatile ion source for nitridation of metal surfaces

    Yamada M., Nakatsuji K., Kawamura N., Iimori T., Komori F.

    Meeting abstracts of the Physical Society of Japan  2012.3  The Physical Society of Japan (JPS)

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  • 22aTE-2 Electronic states of graphene grown on vicinal SiC substrates

    Yoshimura T., Nakatsuji K., Morita K., Uehara N., Kurusu Y., Tanaka S., Komori F.

    Meeting abstracts of the Physical Society of Japan  2011.8  The Physical Society of Japan (JPS)

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  • 23aJB-1 Relief mechanisms of compressive stress on N-saturated Cu(001)

    Yamada Masamichi, Nakatsuji Kan, Komori Fumio

    Meeting abstracts of the Physical Society of Japan  2011.8  The Physical Society of Japan (JPS)

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  • 22pRC-6 Band shape of Au-induced one-dimensional chain structure on a vicinal Ge(001) substrate

    Nakatsuji K., Motomura Y., Niikura R., Iimori T., Yoshimura T., Iwasaki Y., Komori F.

    Meeting abstracts of the Physical Society of Japan  2011.8  The Physical Society of Japan (JPS)

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  • 21pHA-5 Atomic structure study of Au/Ge(111) surface by using STM

    Motomura Y., Nakatsuji K., Niikura R., Komori F.

    Meeting abstracts of the Physical Society of Japan  2011.8  The Physical Society of Japan (JPS)

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  • 25pTG-6 The Institute for Solid State Physics, The University of Tokyo

    Motomura Y., Nakatsuji K., Niikura R., Komori F.

    Meeting abstracts of the Physical Society of Japan  2011.3  The Physical Society of Japan (JPS)

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  • 25aTH-3 Au-induced one-dimensional chain structure on a vicinal Ge(001) substrate and its electronic states

    Nakatsuji K., Motomura Y., Niikura R., Iimori T., Yoshimura T., Iwasaki Y., Komori F.

    Meeting abstracts of the Physical Society of Japan  2011.3  The Physical Society of Japan (JPS)

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  • 27pPSA-24 Structural model for trenches formed on N-saturated Cu(001)

    Yamada Masamichi, Iwasaki Yuma, Nakatsuji Kan, Komori Fumio

    Meeting abstracts of the Physical Society of Japan  2011.3  The Physical Society of Japan (JPS)

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  • 27pPSA-44 Flipping excitation of the impurity dimer on Ge(001) surface II

    NIIKURA Ryo, NAKATSUJI Kan, KOMORI Fumio

    Meeting abstracts of the Physical Society of Japan  2011.3  The Physical Society of Japan (JPS)

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  • 27pPSA-25 Nanostructure observed on Rh/N/Cu(001) surfaces

    Iwasaki Y., Nakatsuji K., Yamada M., Iimori T., Komori F.

    Meeting abstracts of the Physical Society of Japan  2011.3  The Physical Society of Japan (JPS)

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  • 26aTA-7 Electronic states of graphene grown on vicinal SiC substrates

    Yoshimura T., Nakatsuji K., Morita K., Uehara N., Kurisu Y., Tanaka S., Komori F.

    Meeting abstracts of the Physical Society of Japan  2011.3  The Physical Society of Japan (JPS)

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    Event date: 2011.3

    Language:Japanese  

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  • 26aTA-6 Raman characteristics of embedded graphene nanoribbons on vicinal SiC surfaces

    Uehara N., Morita K., Kurisu Y., Tanaka S., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2011.3  The Physical Society of Japan (JPS)

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    Event date: 2011.3

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  • 24pWS-1 Flipping excitation of the impurity dimer on Ge(001) surface

    NIIKURA Ryota, NAKATSUJI Kan, KOMORI Fumio

    Meeting abstracts of the Physical Society of Japan  2010.8  The Physical Society of Japan (JPS)

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    Event date: 2010.8

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  • 23aWX-1 Electronic structure of Ge(111)√<3>×√<3>-Au surface II

    Nakatsuji K., Niikura R., Motomura Y., Shibata Y., Yamada M., Iimori T., Komori F.

    Meeting abstracts of the Physical Society of Japan  2010.8  The Physical Society of Japan (JPS)

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    Event date: 2010.8

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  • 25pWS-1 Raman spectroscopy of embeded graphene nanoribbons on vicinal SiC surfaces

    Uehara N., Morita K., Nakatsuji K., Yoshimura T., Komori F., Tanaka S.

    Meeting abstracts of the Physical Society of Japan  2010.8  The Physical Society of Japan (JPS)

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    Event date: 2010.8

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  • 25aWS-4 Two relief mechanisms of the stress induced by N-adsorption on Cu(001)

    Yamada M., Ohno S., Iwasaki Y., Yagyu K., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2010.8  The Physical Society of Japan (JPS)

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    Event date: 2010.8

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  • 25pWS-2 ARPES study of graphene grown on vicinal SiC substrates

    Nakatsuji K., Yoshimura T., Shibata Y., Morita K., Uehara N., Tanaka S., Komori F.

    Meeting abstracts of the Physical Society of Japan  2010.8  The Physical Society of Japan (JPS)

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    Event date: 2010.8

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  • 25aWS-3 Structure of a Rh/N/Cu(001) surface

    Iwasaki Y., Nakatsuji K., Yamada M., Iimori T., Komori F.

    Meeting abstracts of the Physical Society of Japan  2010.8  The Physical Society of Japan (JPS)

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    Event date: 2010.8

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  • 22pGQ-1 STM study of one-dimensional nanowires on Au/Ge(001) surface

    Niikura R., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2010.3  The Physical Society of Japan (JPS)

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    Event date: 2010.3

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  • 21pPSA-14 Structure of Rh/N/Cu(001)

    Iwasaki Y., Nakatsuji K., Yamada M., Iimori T., Komori F.

    Meeting abstracts of the Physical Society of Japan  2010.3  The Physical Society of Japan (JPS)

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    Event date: 2010.3

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  • 20aGQ-5 Electronic structure of Ge(111)√<3>×√<3>-Au surface

    Nakatsuji K., Niikura R., Shibata Y., Yamada M., Iimori T., Komori F.

    Meeting abstracts of the Physical Society of Japan  2010.3  The Physical Society of Japan (JPS)

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    Event date: 2010.3

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  • 27aYG-1 Electronic states of Au/Ge(001) and (111) surfaces

    Nakatsuji K., Niikura R., Shibata Y., Iwasaki Y., Yamada M., Iimori T., Komori F.

    Meeting abstracts of the Physical Society of Japan  2009.8  The Physical Society of Japan (JPS)

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    Event date: 2009.8

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  • 27pYG-4 Morphology of c(2x2)N-Ni mono layer films on Cu(001) surfaces

    Iimori T., Hashimoto Y., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2009.8  The Physical Society of Japan (JPS)

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    Event date: 2009.8

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  • 26pPSB-25 Thickness control of graphene on vicinal SiC and their electronic states

    Morita K., Hibino H., Nakatsuji K., Komori F., Mizuno S., Tanaka S.

    Meeting abstracts of the Physical Society of Japan  2009.8  The Physical Society of Japan (JPS)

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    Event date: 2009.8

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  • 25aYH-5 Electronic excitation of dimer vibration by local hole injection by STM at Ge(001) surface

    Tomatsu K., Yan Binghai, Yam Chiyung, Nakatsuji K., Yamada M., Rosa Andreia Luisa da, Xu Yong, Frauenheim Thomas, Duan Wenhui, Komori F.

    Meeting abstracts of the Physical Society of Japan  2009.8  The Physical Society of Japan (JPS)

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  • 29pPSB-43 Model for a Cu line formed between N-adsorbed islands on Cu(001)

    Yamada M., Ohno S., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2009.3  The Physical Society of Japan (JPS)

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    Event date: 2009.3

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  • 29pPSB-44 Scattering potentials of group-IV atoms embedded in quasi-1D electronic system on Ge(001)

    Tomatsu K., Yan Binghai, Yamada M., Nakatsuji K., Zhou Gang, Duan Wenhui, Komori F.

    Meeting abstracts of the Physical Society of Japan  2009.3  The Physical Society of Japan (JPS)

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    Event date: 2009.3

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  • 29pPSB-51 STM study of one-dimensional nanowires on Au/Ge(001) surface

    Niikura R., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2009.3  The Physical Society of Japan (JPS)

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    Event date: 2009.3

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  • 29pPSB-42 Change of MnN superstructure by Ferromagnetic metal incorporation

    Hashimoto Y., Iimori T., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2009.3  The Physical Society of Japan (JPS)

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    Event date: 2009.3

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  • 29pPSB-39 Local change of work function induced by surface strain

    Yagyu K., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2009.3  The Physical Society of Japan (JPS)

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    Event date: 2009.3

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  • 28aYH-2 Formation mechanisms of graphene on vicinal SiC surfaces

    Tanaka S., Chenda S., Hagihara Y., Morita K., Hayashi K., Mizuno S., Komori F., Natatsuji K., Hibino H.

    Meeting abstracts of the Physical Society of Japan  2009.3  The Physical Society of Japan (JPS)

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    Event date: 2009.3

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  • 28aYH-8 Local electronic properties of few-layer graphene studied by STM

    NAKATSUJI K., NIIKURA R., SHIBATA Y., MORITA K., MIZUNO S., TANAKA S., KOMORI F.

    Meeting abstracts of the Physical Society of Japan  2009.3  The Physical Society of Japan (JPS)

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    Event date: 2009.3

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  • 29pPSB-54 Electronic structure of few layer graphene on vicinal SiC studied by photoelectron spectroscopy

    Shibata Y, Nakatsuji K, Shirasawa T, Morita K, Mizuno S, Tanaka S, Komori F

    Meeting Abstracts of the Physical Society of Japan  2009  The Physical Society of Japan

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    Event date: 2009

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  • 22pPSB-10 STM observation of Sn-adsorbed Cu(001) surface II

    Yaji K., Nakayama R., Nakatsuji K., Iimori T., Komori F.

    Meeting abstracts of the Physical Society of Japan  2008.8  The Physical Society of Japan (JPS)

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    Event date: 2008.8

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  • 22pPSB-12 Dissociative adsorption of oxygen on the clean Cu(001) surface

    Yagyu K., Liu Xiangdong, Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2008.8  The Physical Society of Japan (JPS)

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  • 22aXA-2 Electronic states of Au/Ge(001) surfaces

    Nakatsuji K., Shibata Y., Komori F.

    Meeting abstracts of the Physical Society of Japan  2008.8  The Physical Society of Japan (JPS)

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  • 20pXB-2 Real-time measurement of dimers' flip-flop motion on Ge(001) by STM

    Tomatsu K., Nakatsuji K., Iimori T., Komori F.

    Meeting abstracts of the Physical Society of Japan  2008.8  The Physical Society of Japan (JPS)

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  • 24pPSA-21 STM and RHEED study of In-adsorbed Ge(001) surfaces

    Nemoto Naoki, Nakatsuji Kan, Yamada Masamichi, Komori Fumio

    Meeting abstracts of the Physical Society of Japan  2008.2  The Physical Society of Japan (JPS)

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    Event date: 2008.2

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  • 24aTD-10 Growth of MnN overlayer on the Cu(001) Surfaces

    Liu Xiangdong, Lu Bin, Iimori T., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2008.2  The Physical Society of Japan (JPS)

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  • 24aTD-11 STM observation of oxygen adsorption on the Cu(001) surface (3)

    Yagyu K., Liu Xiangdong, Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2008.2  The Physical Society of Japan (JPS)

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    Event date: 2008.2

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  • 24pPSA-5 Structural and electronic properties of Sn-adsorbed Cu(001) surface

    Nakayama R., Yaji K., Nakatsuji K., Iimori T., Komori F.

    Meeting abstracts of the Physical Society of Japan  2008.2  The Physical Society of Japan (JPS)

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    Event date: 2008.2

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  • 24pPSA-9 Electronic states of 5d transition metal/Ge(001) surfaces

    Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2008.2  The Physical Society of Japan (JPS)

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    Event date: 2008.2

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  • 26pTD-1 Structural and electronic properties of 3/8 monolayers Sn-adsorbed Cu(001) surface

    Yaji K., Nakayama R., Nakatsuji K., Iimori T., Komori F.

    Meeting abstracts of the Physical Society of Japan  2008.2  The Physical Society of Japan (JPS)

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    Event date: 2008.2

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  • 24pPSA-7 Structure Modification of Si-adsorbed Ge(001) Surface by the Carrier Injection from the STM Tip II

    Tomatsu K., Nakatsuji K., Iimori T., Yamada M., Komori F.

    Meeting abstracts of the Physical Society of Japan  2008.2  The Physical Society of Japan (JPS)

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    Event date: 2008.2

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  • 21aXJ-4 Observation of Oxygen Atomic Column in Au Nanoparticles on Rutile

    Yagyu K., Liu Xiangdong, Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2007.8  The Physical Society of Japan (JPS)

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    Event date: 2007.8

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  • 21pXL-1 Structure Modification of Si-adsorbed Ge(001) Surface by the Carrier Injection from the STM Tip

    Tomatsu K., Nakatsuji K., Iimori T., Komori F.

    Meeting abstracts of the Physical Society of Japan  2007.8  The Physical Society of Japan (JPS)

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    Event date: 2007.8

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  • 22aXK-7 Electronic states of Sn-adsorbed Cu(001) surface

    Yaji K., Nakatsuji K., Iimori T., Yagyu K., Nakayama R., Nemoto N., Okuda T., Harasawa A., Komori F.

    Meeting abstracts of the Physical Society of Japan  2007.8  The Physical Society of Japan (JPS)

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  • 24aTK-5 Electronic states of Co nano-dots on a N/Cu(001) surface

    Nakatsuji K., Iimori T., Sekiba D., Doi S., Yagyu K., Takagi Y., Ohno S., Miyaoka H., Yamada M., Yoshimoto Y., Amemiya K., Matsumura D., Ohta T., Komori F.

    Meeting abstracts of the Physical Society of Japan  2007.8  The Physical Society of Japan (JPS)

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    Event date: 2007.8

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  • 21aXJ-7 STM observation of Sn absorbed Cu(001) surface

    Nakayama R., Nara Y., Yaji K., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2007.8  The Physical Society of Japan (JPS)

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  • 21aWH-3 Structure Modification of the Sn absorbed Ge(001) Surface by the Carrier Injection from the STM Tip III

    Tomatsu K., Iimori T., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2007.2  The Physical Society of Japan (JPS)

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    Event date: 2007.2

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  • 18aTG-9 Surface structure and electronic state of tin on nitrogen adsorbed Cu(001)

    Yaji K., Nara Y., Nakatsuji K., Iimori T., Shimoyamada A., Ishizaka K., Shin S., Komori F.

    Meeting abstracts of the Physical Society of Japan  2007.2  The Physical Society of Japan (JPS)

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    Event date: 2007.2

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  • 20aPS-25 Fabrication and characterization of MnN superstructure on Cu(001) surfaces

    Lu Bin, Liu Xiangdong, Iimori Takushi, Nakatsuji Kan, Komori Fumio

    Meeting abstracts of the Physical Society of Japan  2007.2  The Physical Society of Japan (JPS)

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    Event date: 2007.2

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  • 19aTG-3 STM observation of oxygen adsorption on Cu(001) surface at low temperature

    Yagyu K., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2007.2  The Physical Society of Japan (JPS)

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  • 20aPS-24 Structural changes of Sn/Cu(001) surface due to Sn adsorption

    Nara Y., Yaji K., Iimori T., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2007.2  The Physical Society of Japan (JPS)

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  • 19pWH-4 Atomic Manipulation Through Tunneling Carrier Injection on Clean Ge(001)(Atom Dynamics and Formation of Nano-objects by Electronic Excitations)

    Nakatsuji Kan, Takagi Yasumasa, Yoshimoto Yoshihide, Komori Fumio

    Meeting abstracts of the Physical Society of Japan  2007.2  The Physical Society of Japan (JPS)

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  • 22pPSA-102 Atomic and electronic structures of C_<60> ultra thin films grown on a In/Si(111)-(4×1) surface

    Mawatari K, Nakatuji K, Komori F, Eriksson P.E.J, Uhrberg R.I.G, Sakamoto K

    Meeting Abstracts of the Physical Society of Japan  2007  一般社団法人 日本物理学会

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    Event date: 2007

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  • SiON ultrathin film epitaxially grown on SiC(0001)

    Shirasawa Tetsuroh, Hayashi Kenjiro, Nakatsuji Kan, Sakamoto Kazuyuki, Mizuno Seigi, Komori Fumio, Tanaka Satoru, Tochihara Hiroshi

    Abstract of annual meeting of the Surface Science of Japan  2007  The Surface Science Society of Japan

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    Event date: 2007

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    SiCは次世代半導体材料として近年特に注目されている。重要な開発課題の1つが良質な絶縁膜及び界面の作製である。本研究ではSiC(0001)上に秩序SiON超薄膜がエピタキシャル成長することを見出し、その結晶構造と電子状態を調べた。その結果、膜中と界面にダングリングボンドはなく、界面準位も存在しないことが明らかになった。SiCの界面問題の解消に非常に重要な物質となることが期待される。

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  • 20pZA-10 Soft X-ray emission spectroscopy of Co/N/Cu(001) II

    Nakatsuji K, Takata Y, Shin S, Ishikawa T, omori F, Yoshimoto Y, Takagi Y, Tomatsu K, Yaji K, Iimori T, Harada Y, Tokushima T, Takeuchi T

    Meeting Abstracts of the Physical Society of Japan  2007 

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  • 22pPSA-19 Electronic states of a SiON unltrathin film epitaxially grown on an SiC(0001) surface

    Shirasawa T, Tanaka S, Komori F, Tochihara H, Hayashi K, Imai A, Kakuta H, Mawatari K, Yaji K, Nakatsuji K, Mizuno S, Sakamoto K

    Meeting Abstracts of the Physical Society of Japan  2007  The Physical Society of Japan

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    Event date: 2007

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  • 23pYC-4 Strain-induced change of Shockley state on Cu(100)

    Sekiba D., Yoshimoto Y., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2006.8  The Physical Society of Japan (JPS)

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    Event date: 2006.8

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  • 24aYH-7 Structure and thermal change of Sn/Cu(001) surface

    Nara Y., Yaji K., Iimori T., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2006.8  The Physical Society of Japan (JPS)

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    Event date: 2006.8

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  • 24aYH-4 Structure Modification of the Sn absorbed Ge(001) Surface by the Carrier Injection from the STM Tip, II

    Tomatsu K., Iimori T., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2006.8  The Physical Society of Japan (JPS)

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  • 25aYH-7 Non-local structure change on Ge(001) surface by tunneling carrier injection into the surface states

    Takagi Y., Yoshimoto Y., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2006.8  The Physical Society of Japan (JPS)

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  • 24aYH-9 Periodic nanostructure formation of MnN thin film on Cu(001)

    Komori F., Liu X., Lu B., Iimori T., Nakatsuji K.

    Meeting abstracts of the Physical Society of Japan  2006.8  The Physical Society of Japan (JPS)

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  • 27pXJ-3 Photoemission study on O/Cu(100) with lattice strain

    Sekiba D., Yoshimoto Y., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2006.3  The Physical Society of Japan (JPS)

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    Event date: 2006.3

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  • 27pYB-4 Structure Modification of the Sn absorbed Ge(001) Surface by the Carrier Injection from the STM Tip

    Tomatsu K., Iimori T., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2006.3  The Physical Society of Japan (JPS)

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  • 27pYB-5 Structure transformation by tunneling carriers injected into Ge(001) surface II

    Takagi Y., Yoshimoto Y., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2006.3  The Physical Society of Japan (JPS)

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  • 27pYB-7 STM observation of Sn arrangement on N/Cu(001) surface

    Nara Y., Nakatsuji K., Iimori T., Komori F.

    Meeting abstracts of the Physical Society of Japan  2006.3  The Physical Society of Japan (JPS)

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  • Electronic structure of Co/N/Cu(001) surfaces

    Nakatsuji Kan, Iimori Takushi, Sekiba Daiichiro, Doi Shunsuke, Yagyu Kazuma, Takagi Yasumasa, Ohno Shin-ya, Miyaoka Hideharu, Yamada Masamichi, Amemiya Kenta, Matsumura Daiju, Ohta Toshiaki, Komori Fumio

    Abstract of annual meeting of the Surface Science of Japan  2006  The Physical Society of Japan (JPS)

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    Event date: 2006

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  • 26aYH-10 Soft X-ray emission spectroscopy of Co/N/Cu(001)

    Takagi Y, Takata Y, Shin S, Ishikawa T, Tomatsu K, Yaji K, Iimori T, Nakatsuji K, Komori F, Harada Y, Tokushima T, Takeuchi T

    Meeting Abstracts of the Physical Society of Japan  2006 

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  • 21aPS-16 Electronic structure of the Ge(001)c(4×2) clean surface III

    Nakatsuji K., Takagi Y., Kusuhara H., Ishii A., Komori F.

    Meeting abstracts of the Physical Society of Japan  2005.8  The Physical Society of Japan (JPS)

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    Event date: 2005.8

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  • 22aXF-6 Analysis of electronic transport in surface-state observed by kink motion

    Takagi Y., Yoshimoto Y., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2005.8  The Physical Society of Japan (JPS)

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  • 21aPS-30 Temperature dependence of Sn dimer alignments on Ge(001)

    Tomatsu K., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2005.8  The Physical Society of Japan (JPS)

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  • 25pWB-6 Electronic structure of the Ge(001)c(4×2) clean surface II

    Nakatsuji K., Takagi Y., Kusuhara H., Ishii A., Komori F.

    Meeting abstracts of the Physical Society of Japan  2005.3  The Physical Society of Japan (JPS)

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    Event date: 2005.3

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  • 25aXD-10 STM study of Sn adsorbed Ge(001) surfaces

    Tomatsu K., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2005.3  The Physical Society of Japan (JPS)

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  • 25aXD-2 In/Cu structure on Cu(001) surfaces with localized strain studied by STM

    Doi S., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2005.3  The Physical Society of Japan (JPS)

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  • 25aXD-9 The motion of the boundary between c(4×2) and p(2×2) structures on the clean Ge(001) surface induced by bias pulse (II).

    Takagi Y., Yoshimoto Y., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2005.3  The Physical Society of Japan (JPS)

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  • 14aXG-5 Electronic structure of the Ge(001)c(4×2) clean surface

    Nakatsuji K., Takagi Y., Kusuhara H., Ishii A., Komori F.

    Meeting abstracts of the Physical Society of Japan  2004.8  The Physical Society of Japan (JPS)

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  • 15pXG-10 The motion of the boundary between c(4×2) and p(2×2) structures on the clean Ge(001) surface induced by bias pulse

    Takagi Y., Yoshimoto Y., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2004.8  The Physical Society of Japan (JPS)

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  • 15aPS-38 Cntrol of the surface pattern by gas adsoption

    Doi S., Yagyu K., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2004.8  The Physical Society of Japan (JPS)

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  • 27aWP-2 Formation process of surface alloy on Ag/Ge(001) surfaces

    Nakatsuji K., Takagi Y., Yamada M., Komori F.

    Meeting abstracts of the Physical Society of Japan  2004.3  The Physical Society of Japan (JPS)

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  • 30aWR-6 Surface Electronic States of Co dots on N-saturated Cu(001) surfaces

    Iimori T., Nakatsuji K., Ohno S., Yagyuu K., Takagi Y., Doi S., Miyaoka H., Yamada M., Amamiya K., Matsumua D., Kitagawa S., Yokoyama T., Ohta T., Muro T., Wakita T., Kimura H., Imada S., Komori F.

    Meeting abstracts of the Physical Society of Japan  2004.3  The Physical Society of Japan (JPS)

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    Event date: 2004.3

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  • 28pWP-9 Local phase transition on clean Ge(001) surface induced by bias pulse

    Takagi Y., Yamada M., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2004.3  The Physical Society of Japan (JPS)

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  • 28pWP-10 A model of the STM structure transformation at Ge(001) surface

    Takagi Y., Yoshimoto Y., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2004.3  The Physical Society of Japan (JPS)

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  • 30aWR-6 Surface Electronic States of Co dots on N-saturated Cu(001) surfaces

    Iimori T, Nakatsuji K, Ohno S, Yagyuu K, Takagi Y, Doi S, Miyaoka H, Yamada M, Amamiya K, Matsumua D, Kitagawa S, Yokoyama T, Ohta T, Muro T, Wakita T, Kimura H, Imada S, Komori F

    Meeting abstracts of the Physical Society of Japan  2004.3  The Physical Society of Japan (JPS)

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  • Phase transition of super structure of clean Ge(001) surface induced by STM (II)

    Takagi Y., Yoshimoto Y., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2003.8  The Physical Society of Japan (JPS)

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    Event date: 2003.8

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  • Coadsorption of Nitrogen and Oxygen on Cu(001) surfaces

    Yagyu K., Ohno S., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2003.8  The Physical Society of Japan (JPS)

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    Event date: 2003.8

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  • X-ray absorption spectra of Co dots

    Nakatsuji K., Ohno S., Yagyuu K., Iimori T., Takagi Y., Miyaoka H., Yamada M., Amemiya K., Matsumura D., Yokoyama T., Ohta T., Muro T., Wakita T., Kimura A., Imada S., Komori F.

    Meeting abstracts of the Physical Society of Japan  2003.8  The Physical Society of Japan (JPS)

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  • Control of the superstructures on Ge(001) surface by low-temperature scanning tunneling microscopy

    Nakatsuji K., Takagi Y., Yoshimoto Y., Komori F.

    Meeting abstracts of the Physical Society of Japan  2003.8  The Physical Society of Japan (JPS)

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  • Low temperature STM/STS of two-dimensional island on Ge(001) surface

    Takagi Y., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2003.3  The Physical Society of Japan (JPS)

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  • Model for the stripe-pattern formed on a vicinal Cu(001) surface by nitrogen adsorption

    Yamada M., Ohno S., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2003.3  The Physical Society of Japan (JPS)

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  • Phase transition of super stracture of clean Ge(001) surface induced by STM

    Takagi Y., Yoshimoto Y., Nakatsuji K., Tsuneyuki S., Komori F.

    Meeting abstracts of the Physical Society of Japan  2003.3  The Physical Society of Japan (JPS)

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  • Oxygen adsorption on N/Cu(001) and Fe/N/Cu(001) surfaces

    Yagyu K., Ohno S., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2003.3  The Physical Society of Japan (JPS)

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  • Formation process of Si(001)-(2×2)Ag -- in comparison with Ge(001)-Ag

    Miyaoka H., Naitoh Y., Nakatsuji Kan, Komori F.

    Meeting abstracts of the Physical Society of Japan  2002.8  The Physical Society of Japan (JPS)

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  • Inclusion processes of Fe on c(2×2)-N/Cu(001) surfaces.

    Ohno S., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2002.8  The Physical Society of Japan (JPS)

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  • X-ray absorption spectra on Co/N/Cu(001) surface

    Nakatsuji K., Ohno S., Iimori T., Miyaoka H., Yamada M., Takagi Y., Yagyu K., Amemiya K., Matsumura D., Kitagawa S., Yokoyama T., Ohta T., Komori F.

    Meeting abstracts of the Physical Society of Japan  2002.8  The Physical Society of Japan (JPS)

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  • 25pYF-1 Initial growth processes of Fe on c(2×2)-N/Cu(001) surfaces.

    Ohno S., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2002.3  The Physical Society of Japan (JPS)

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  • 27pYL-1 XMCD study of Co nano-dots array on N/Cu(001) surface

    Nakatsuji K., Ohno S., Iimori T., Miyaoka H., Yamada M., Komori F., Amemiya K., Matsumura D., Yokoyama T., Kitagawa S., Ohta T.

    Meeting abstracts of the Physical Society of Japan  2002.3  The Physical Society of Japan (JPS)

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  • 25pPSB-37 STM studies of Ag on the Si(100) surface at low temperature

    Miyaoka H., Naitoh Y., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2002.3  The Physical Society of Japan (JPS)

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  • Electronic states of Ag thin films on Ge(001) surface

    Nakatsuji K., Yamada M., Ohno S., Naitoh Y., Iimori T., Komori F., Okuda T., Harasawa A., Kinoshita T.

    Meeting abstracts of the Physical Society of Japan  2001.3  The Physical Society of Japan (JPS)

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  • Growth of ultrathin film of transition metals on C(2×2)-N/Cu(001) surfaces

    Ohno S., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2001.3  The Physical Society of Japan (JPS)

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  • Spin-resolved photoelectron spectroscopy of Fe_3O_4(111)thin film

    Nakatsuji K., Cai Y. Q., Ohno S., Imori T., Yamada M., Komori F.

    Meeting abstracts of the Physical Society of Japan  2000.9  The Physical Society of Japan (JPS)

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    Event date: 2000.9

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  • Growth and band structure of Fe_3O_4(111) thin films on Pt(111) Surface.

    Ohno S., Cai Y. O., Nakatsuji K., Iimori T., Yamada M., Komori F.

    Meeting abstracts of the Physical Society of Japan  2000.9  The Physical Society of Japan (JPS)

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  • Magnetic properties of Co smal dots arranged on N-adsorbed Cu (001) surfaces

    Lee Ki-dong, Iimori T., Nakatsuji K., Komori F.

    Meeting abstracts of the Physical Society of Japan  2000.3  The Physical Society of Japan (JPS)

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  • 25pY-9 Quantized conductance of Fe nanowire

    Nakatsuji K, Komori F

    Meeting abstracts of the Physical Society of Japan  1999.9  The Physical Society of Japan (JPS)

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  • 26aPS-16 Ultrathin film structure of Fe, Co, Nil on N-Cu(001) surfaces

    Ohno S, Nakatsuji K, Lee K.D., Iimori T, Komori F

    Meeting abstracts of the Physical Society of Japan  1999.9  The Physical Society of Japan (JPS)

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  • 28p-PSA-5 STS Spectrum of Fe evaporated BSCCO surface

    Arai S., Nakatsuji K., Ohno S., Komori F.

    Meeting abstracts of the Physical Society of Japan  1999.3  The Physical Society of Japan (JPS)

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  • 31p-F-1 Circular Dichroism in Angular Distribution of the Photoelectron from Si(001)Valence Band II

    Nakatsuji K, Furuhata T, Takagi H, Fujikawa M, Suga S, Miyahara T, Yagishita A, Daimon H, Solterbeck C.H, Schattke W

    Meeting abstracts of the Physical Society of Japan  1997.3  The Physical Society of Japan (JPS)

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  • Study of O2/Si(111) by electron-stimulated ion desorption. II.

    坂本一之, 中辻寛, 米沢卓也, 大門寛, 菅滋正

    日本物理学会講演概要集(年会)  1994.3 

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  • Photo-stimulated-desorption study of Cl/Si(111) surface using synchrotron radiation.

    米沢卓也, 大門寛, 中辻寛, 坂本一之, 菅滋正, 難波秀利, 太田俊明

    日本物理学会講演概要集(分科会)  1993.9 

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  • Study of O2/Si(111) by electron-stimulated ion desorption.

    坂本一之, 中辻寛, 米沢卓也, 大門寛, 菅滋正

    日本物理学会講演概要集(年会)  1993.3 

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  • SiC(0001)ナノファセット基板上グラフェンの構造と電子状態

    飯盛拓嗣, 中辻寛, 家永紘一郎, 宮町俊生, 矢治光一郎, 福間洸平, 森田康平, 林真吾, 梶原隆司, Visikovskiy Anton, 間瀬一彦, 田中悟, 小森文夫

    日本物理学会第71回年次大会  2016.3 

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    Venue:宮城県  

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  • ビスマス原子を吸着させたグラフェン/Cu(111)表面における原子構造・電子状態

    山上剛史, 中辻寛, 平山博之

    日本物理学会第76回年次大会  2021.3 

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  • Si(111)√3×√3-(Bi,In)表面の電子状態

    勝俣錬, 中村玲雄, 金野達, 木村彰博, 大内拓実, 永友慶, 田中和也, 下川裕理, 小澤健一, 間瀬一彦, 小森文夫, 飯盛拓嗣, 平山博之, 中辻寛

    日本物理学会第76回年次大会  2021.3 

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  • Si(110)3×2-Bi表面の構造解析

    諸貫 亮太, 大内 拓実, 永友 慶, 森井 七生, 金野 達, 白澤 徹郎, 平山 博之, 中辻 寛

    日本物理学会第76回年次大会  2021.3 

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  • 黒燐構造Bi 超薄膜の成長過程と構造相転移の蒸着レート制御

    潮田 亮太, 志村 舞望, 笠井 大雅, 笹川 直希, 長瀬 謙太郎, 中辻 寛, 平山 博之

    日本物理学会第76回年次大会  2021.3 

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  • n-type Si(111)√3×√3-B 表面上のBi(110)超薄膜の電子状態

    中村玲雄, 勝俣錬, 潮田亮太, 大内拓実, 小森文夫, 飯盛拓嗣, 平山博 之, 中辻寛

    日本物理学会第76回年次大会  2021.3 

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  • Si(111)表面上における黒リン構造Bi(110)超薄膜の低温蒸着による成長過程

    志村 舞望, 潮田 亮太, 中辻 寛, 平山 博之

    日本物理学会第76回年次大会  2021.3 

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  • X線CTR散乱による√7×√3-In-rect/Si(111)√3×√3-Bの界面構造の測定

    荻野嵩大, 田尻寛男, 中辻寛, 平山博之

    日本物理学会第76回年次大会  2021.3 

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  • 表面X線散乱による低温蒸着した黒燐構造Bi超薄膜の成長過程観察

    白澤 徹郎, 潮田 亮太, 中辻 寛, 平山 博之

    日本物理学会第76回年次大会  2021.3 

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  • Cu(001)表面上のFe薄膜に及ぼす酸素・窒素サーファクタントの影響

    木村 彰博, 森井 七生, 佐藤 圭介, 永友 慶, 小澤 健一, 小森 文夫, 飯盛 拓嗣, 平山 博之, 中辻 寛

    日本物理学会第76回年次大会  2021.3 

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  • Biをインターカレートさせたグラフェン/Bi[2012]/Cu(111)のSTM観測

    笠井大雅, 山上剛史, 中辻寛, 平山博之

    日本物理学会2021年秋季大会  2021.9 

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  • Si(111)7×7基板上に低温蒸着させたビスマス超薄膜の構造相転移の臨界点におけるBi(111)テラスの構造

    笹川直希, 潮田亮太, 中辻寛, 平山博之

    日本物理学会2021年秋季大会  2021.9 

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  • Electronic structure of Bi(110) ultra-thin films grown on n-type Si(111)√3×√3-B substrates International conference

    T. Ouchi, L. Nakamura, K. Takemura, M. Shimura, R. Ushioda, T. Iimori, F. Komori, H. Hirayama, K. Nakatsuji

    13th International Symposium on Atomic Level Characterization for New Materials and Devices (ALC’21)  2021.10 

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  • Electronic structure of Cu(001)c(4×2)-Bi surface International conference

    N. Morii, K. Nagatomo, K. Takemura, T. Ouchi, H. Uryu, S. Nagao, R. Kawazoe, T. Iimori, F. Komori, H. Hirayama, K. Nakatsuji

    13th International Symposium on Atomic Level Characterization for New Materials and Devices (ALC’21)  2021.10 

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  • Electronic structure of PdCu surface alloy International conference

    Kei Nagatomo, N. Morii, K. Takemura, T. Iimori, F. Komori, H. Hirayama, K. Nakatsuji

    13th International Symposium on Atomic Level Characterization for New Materials and Devices (ALC’21)  2021.10 

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  • Si(111)√3×√3-B表面上のBi(110)超薄膜の電子状態

    大内拓実, 中村玲雄, 竹村晃一, 志村舞望, 潮田亮太, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛

    2021年日本表面真空学会学術講演会  2021.11 

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  • PdCu表面合金層の電子構造

    永友慶, 森井七生, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛

    2021年日本表面真空学会学術講演会  2021.11 

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  • Cu(001)c(4×2)-Bi表面の電子状態

    森井七生, 永友慶, 竹村晃一, 大内拓実, 瓜生瞳美, 長尾俊佑, 河添理央, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛

    2021年日本表面真空学会学術講演会  2021.11 

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  • Structure of Bi(111) terraces nucleated on the Bi(110) island International conference

    Naoki Sasagawa, Ryota Ushioda, Kan Nakatsuji, Hiroyuki Hirayama

    The 9th International Symposium on Surface Science (ISSS9)  2021.11 

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  • STM observation of Bi-intercalated graphene/Bi/Cu(111) International conference

    Taiga Kasai, Tsuyoshi Yamagami, Kan Nakatsuji, Hiroyuki Hirayama

    The 9th International Symposium on Surface Science (ISSS9)  2021.11 

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  • Nucleation of ultrathin Bi(110) film on the Si(111)√3×√3-B substrate in the two step growth International conference

    Maimi Shimura, Ryota Ushioda, Kan Nakatsuji, Hiroyuki Hirayama

    The 9th International Symposium on Surface Science (ISSS9)  2021.11 

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  • First-principles study of In double layers on Si(111) √3 × √3 -B substrates International conference

    I. Seo, K. Nakatsuji, H. Hirayama, Y. Gohda

    The 9th International Symposium on Surface Science  2021.12 

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  • Si(111)√3×√3-B 表面上のBi(110)超薄膜の電子状態における基板依存性

    大内拓実, 長尾俊祐, 中村玲雄, 竹村晃一, 志村舞望, 潮田亮太, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛

    日本物理学会第76回年次大会  2022.3 

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  • Structural and Electronic Properties of In Double Layers on Si(111)√3×√3-B International conference

    Insung Seo, Kan Nakatsuji, Hiroyuki Hirayama, Yoshihiro Gohda

    The 2022 MRS Spring Meeting  2022.5 

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    Venue:Honolulu, Hawaii  

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  • Intrinsic superconductivity of two monolayer thick Indium film International conference

    T. Ogino, I. Seo, H. Tajiri, M. Nakatake, S. Takakura, Y. Sato, Y. Hasegawa, Y. Gohda, K. Nakatsuji, H. Hirayama

    The 22nd International Vacuum Congress  2022.9 

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    Venue:Sapporo  

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  • Observation of the buried interface under the ultrathin In film on the Si(111)7x7 substrate; Revisit International conference

    N. Sasagawa, Y. Itakura, K. Kizaki, K. Nakatsuji, H. Hirayama

    The 22nd International Vacuum Congress  2022.9 

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    Venue:Sapporo  

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  • Bi Intercalation at the Graphene/Cu(111) Interface International conference

    T. Kasai, T. Yamagami, K. Nakatsuji, H. Hirayama

    The 22nd International Vacuum Congress  2022.9 

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    Venue:Sapporo  

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  • Interfacial Structures of In Double Layers on Si(111)√3×√3-B Substrates International conference

    Insung Seo, Kan Nakatsuji, Hiroyuki Hirayama, Yoshihiro Gohda

    The 22nd International Vacuum Congress  2022.9 

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    Venue:Sapporo, Hokkaido  

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  • Electronic structure and interactions of In thin film on Si(111)√3×√3-B International conference

    Insung Seo, Kan Nakatsuji, Hiroyuki Hirayama, Yoshihiro Gohda

    14th International Symposium on Atomic Level Characterizations for New Materials and Devices '22  2022.10 

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    Venue:Okinawa  

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  • Si(111)√3×√3-Ag 表面上のBi(110)超薄膜の電子状態

    長尾俊佑, 大内拓実, 瓜生瞳美, 織田孝幸, 飯盛拓嗣, 小森文夫, 中辻寛, 平山博之

    日本物理学会2023年春季大会  2023.3 

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  • Si(111)√3x√3-B表面上に成長したBi(110)超薄膜の構造

    長瀬謙太郎, 小久保郁也, 山崎詩郎, 中辻寛, 平山博之

    SPRUC顕微ナノ材料科学研究会・表面科学会放射光部会・プローブ顕微鏡研究部会合同シンポジウム  2018.3 

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  • Ag超薄膜中の量子閉じ込めにおけるwetting layerの効果

    板倉悠太, 菅原喜周, 山崎詩郎, 中辻寛, 平山博之

    日本表面科学会 第3回関東支部講演大会  2018.4 

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  • Si(111)√3x√3-B基板上のIn吸着表面超構造

    車尾ヴァレンティン基, 荻野嵩大, 山崎詩郎, 中辻寛, 平山博之

    日本表面科学会 第3回関東支部講演大会  2018.4 

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  • SiC ファセット上サブ 2 次元グラフェンの構造制御

    福間 洸平, 林 真吾, 梶原 隆司, Anton Visikovskiy, 飯盛 拓嗣, 家永 紘一郎, 矢治 光一郎, 中辻 寛, 小森 文夫, 田中 宏和, 神田 晶申, 田中 悟

    第63回応用物理学会春季学術講演会  2016.3 

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    Venue:東京都  

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  • Ag超薄膜/Si(111)基板界面wetting layerの結晶化に伴う量子井戸準位のエネルギーシフト

    菅原喜周, 板倉悠太, 山崎詩郎, 中辻寛, 平山博之

    2018.9 

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  • Si(111)√3x√3-B基板上に低温吸着したビスマス超薄膜のアニールによる構造変化

    長瀬謙太郎, 山崎詩郎, 中辻寛, 平山博之

    日本物理学会2018年秋季大会  2018.9 

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  • Suppression of Metal-Insulator Transition by Electron Doping from Substrates to Indium Atomic Wires: Si(111)4×1-In International conference

    T. Ogino, S. Yamazaki, K. Nakatsuji, H. Hirayama

    14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14)  2018.10 

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    Venue:Sendai  

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  • Electronic Structure of Bi(110) Islands Grown on a Si(111)Root3×Root3-B Substrate International conference

    K. Nakatsuji, Y. Shimokawa, T. Fujiwara, K. Nagase, S. Yamazaki, Y. Watanabe, K. Mase, K. Takahashi, H. Hirayama

    14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures (ACSIN-14)  2018.10 

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    Venue:Sendai  

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  • Si(111)基板上におけるBi-In表面合金の構造と電子状態

    田中和也, 金野達, 下川裕理, 佐藤圭介, 山崎詩郎, 飯盛拓嗣, 小森文夫, 間瀬一彦, 平山博之, 中辻寛

    日本物理学会第74回年次大会  2019.3 

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    Venue:博多  

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  • 酸素サーファクタントを用いてCu(001)表面上に作製したFe薄膜の表面構造と電子状態

    佐藤圭介, 金野達, 木村彰博, 渡邊瞳, 田中和也, 山崎詩郎, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛

    日本物理学会第74回年次大会  2019.3 

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    Venue:博多  

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  • Si(111)基板上Ag(111)超薄膜の有効量子井戸幅評価

    菅原喜周, 板倉悠太, 山崎詩郎, 中辻寛, 平山博之

    日本物理学会第74回年次大会  2019.3 

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    Venue:博多  

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  • Electronic structure of Bi(110) ultra-thin films grown on a Si(111)√3 x √3-B substrate International conference

    K. Nakatsuji, Y. Shimokawa, T. Fujiwara, K. Nagase, S. Yamazaki, Y. Watanabe, K. Mase, K. Takahashi, H. Hirayama

    21st International Vacuum Congress  2019.7 

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  • Cu(111)上に成長させたh-BN膜における成長様式・電子状態の層数依存性

    山上剛史, 四ツ谷壮一郎, 山崎詩郎, 中辻寛, 平山博之

    日本物理学会2019年秋季大会  2019.9 

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    Venue:岐阜  

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  • Si(111)√3×√3-B基板上に低温蒸着したビスマス超薄膜の室温アニールによる構造変化(2)

    長瀬謙太郎, 山崎詩郎, 中辻寛, 平山博之

    日本物理学会2019年秋季大会  2019.9 

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    Venue:岐阜  

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  • Characterization of Mono- and multilayer hexagonal Boron Nitride on Cu (111) substrate International conference

    T. Yamagami, S. Yotsutani, S. Yamazaki, K. Nakatsuji, H. Hirayama

    12th International Symposium on Atomic Level Characterizations for New Materials and Devices (ALC-19)  2019.10 

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    Venue:Kyoto  

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  • Structural change of Bi ultrathin films in the two-step growth on Si(111)√3 x √3-B substrates International conference

    K. Nagase, S. Yamazaki, K. Nakatsuji, H. Hirayama

    12th International Symposium on Atomic Level Characterizations for New Materials and Devices (ALC-19)  2019.10 

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    Venue:Kyoto  

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  • シリコン基板上に成長したBi超薄膜の構造と電子状態

    中辻 寛

    日本表面真空学会2019年学術講演会  2019.10 

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  • Atomic and electronic structures of Bi(110) islands grown on Si substrates International conference

    Kan Nakatsuji

    IMR+MAX IV 2020  2020.1 

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  • Si(110)3x2-Bi表面の電子状態

    金野達, 勝俣錬, 木村彰博, 中村玲雄, 山崎詩郎, 小澤健一, 間瀬一彦, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛

    日本物理学会第75回年次大会  2020.3 

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    Venue:名古屋  

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  • SiC(0001)上のツイストグラフェンの電子状態のツイスト角度依存性

    飯盛拓嗣, 今村均, 魚谷亮介, 宮町俊生, 服部琢磨, 中辻寛, 北村未歩, 堀場弘司, 間瀬一彦, 梶原隆司, Visikovskiy Anton, 田中悟, 小森文夫

    日本物理学会 2020年秋季大会  2020.9 

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  • Si(110)3×2-Bi表面の電子状態

    金野達, 勝俣錬, 木村彰博, 中村玲雄, 諸貫亮太, 山崎詩郎, 小澤健一, 間瀬一彦, 飯盛拓嗣, 小森文夫, 平山博之, 中辻寛

    2020年日本表面真空学会学術講演会  2020.11 

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  • 6H-SiC(0001)表面上のナノファセットに形成したグラフェンの電子状態について II

    飯盛拓嗣, 中辻寛, 宮町俊生, 家永紘一郎, 豊久宗玄, 福間洸平, 森田康平, 林真吾, 梶原隆司, Anton Visikovsliy, 田中悟, 間瀬一彦, 小森文夫

    日本物理学会第72回年次大会  2017.3 

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  • Si(111)√3×√3-B 表面上Ag(111)超薄膜のImage Potential Stateの測定

    菅原喜周, 長瀬謙太郎, 山崎詩郎, 中辻寛, 平山博之

    日本物理学会第72回年次大会  2017.3 

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  • Si(111)√3×√3-B表面上に形成されるBi(110)超薄膜の電子状態(II)

    長瀬 謙太郎, 渡辺 成栄, 山崎 詩郎, 合田 義弘, 中辻 寛, 平山 博之

    日本物理学会第72回年次大会  2017.3 

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    Venue:大阪府  

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  • Si(111)√3×√3-B 表面上のBi(110)超薄膜の成長と電子状態

    藤原翼, 下川裕理, 長瀬謙太郎, 山崎詩郎, 間瀬一彦, 渡辺義夫, 仲武昌史, 中辻寛, 平山博之

    日本物理学会第72回年次大会  2017.3 

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  • Ag(111)超薄膜中の量子井戸準位と真空中の鏡像準位におけるavoided crossingの測定

    菅原喜周, 長瀬謙太郎, 山崎詩郎, 中辻寛, 平山博之

    第37回表面科学学術講演会  2017.8 

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  • Bi(110)超薄膜の膜厚偶奇性と電子状態

    長瀬謙太郎, 山崎詩郎, 中辻寛, 平山博之

    第37回表面科学学術講演会  2017.8 

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  • Si(111)4x1-In表面における電子ドーピングによる金属―絶縁体転移の操作

    荻野嵩大, 平山博之, 中辻寛, 山崎詩郎

    第37回表面科学学術講演会  2017.8 

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  • 6H-SiC(0001)表面上のナノファセットに形成したグラフェンの電子 フォノン相互作用

    飯盛拓嗣, 家永紘一郎, 宮町俊生, 中島脩平, 高橋文雄, 矢治光一郎, 中辻寛, 間瀬一彦, 福間洸平, 林真吾, 梶原隆司, Anton Visikovsliy, 田中悟, 小森文夫

    日本物理学会2017年秋期大会  2017.9 

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    Venue:岩手県  

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  • アンモニアボラン分子蒸着による銅表面上での六方晶窒化ホウ素の合成

    山上剛史, 高木優香, 山崎詩郎, 中辻寛, 平山博之

    日本物理学会2017年秋季大会  2017.9 

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  • キャリアドーピングによるSi(111)4xi-In表面の金属―絶縁体転移の制御

    荻野嵩大, 山崎詩郎, 中辻寛, 平山博之

    日本物理学会2017年秋季大会  2017.9 

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  • Si(111)√3x√3-B表面上に成長した数層Bi(110)薄膜の電子状態

    下川裕理, 藤原翼, 長瀬謙太郎, 山崎詩郎, 渡辺義夫, 仲武昌史, 間瀬一彦, 高橋和敏, 中辻寛, 平山博之

    日本物理学会2017年秋季大会  2017.9 

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  • グラファイト表面上のモアレ構造部分におけるdz/dVスペクトル測定

    石綿慈, 山崎詩郎, 中辻寛, 平山博之

    日本物理学会2017年秋季大会  2017.9 

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  • 低温蒸着によるBi超薄膜の構造と電子状態

    長瀬謙太郎, 山崎詩郎, 中辻寛, 平山博之

    日本物理学会2017年秋季大会  2017.9 

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  • Interaction of Image-Potential States with Quantum-Well State in Ultra-thin Ag(111) films on Si(111)Root3xRoot3-B substrate International conference

    K. Sugawara, K. Nagase, S. Yamazaki, K. Nakatsuji, H. Hirayama

    The 8th International Symposium on Surface Science (ISSS-8)  2017.10 

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  • Electron doping induced control of Metal-Insulator transition on Si(111)4x1-In surface International conference

    T.Ogino, S. Yamazaki, K. Nakatsuji, H. Hirayama

    The 8th International Symposium on Surface Science (ISSS-8)  2017.10 

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  • Even-odd-parity and electronic structure of Bi(110) ultra-thin films International conference

    K. Nagase, S. Yamazaki, K. Nakatsuji, H. Hirayama

    The 8th International Symposium on Surface Science (ISSS-8)  2017.10 

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    Venue:Tsukuba  

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  • Electronic structure of Bi(110) ultra-thin films grown on Si(111)Root3×Root3-B surfaces International conference

    Y. Shimokawa, T. Fujiwara, K. Nagase, S. Yamazaki, Y. Watanabe, M. Nakatake, K. Mase, K. Takahashi, K. Nakatsuji, H. Hirayama

    The 8th International Symposium on Surface Science (ISSS-8)  2017.10 

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  • Si(111)√3x√3-B表面のIn吸着構造

    車尾ヴァレンティン基, 荻野嵩大, 山崎詩郎, 中辻寛, 平山博之

    日本物理学会第73回年次大会  2018.3 

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  • Bi/Si(111)4×1-In表面の構造と電子状態

    下川裕理, 田中和也, 佐藤圭介, 渡邊瞳, 山崎詩郎, 飯盛拓嗣, 小森文夫, 間瀬一彦, 平山博之, 中辻寛

    日本物理学会第73回年次大会  2018.3 

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  • 表面X線回折によるAg/Si(111)√3x√3-B界面構造の研究

    吉池雄作, 田尻寛男, 山崎詩郎, 中辻寛, 平山博之

    日本物理学会第73回年次大会  2018.3 

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  • SiC(0001)表面上のナノファセットに形成したグラフェンの角度分解光電子分光

    飯盛拓嗣, 中辻寛, 宮町俊生, 家永紘一郎, 金聖憲, 田村匡, 豊久宗玄, 福間洸平, 森田康平, 梶原隆司, 林真吾, Anton Visikovsliy, 田中悟, 間瀬一彦, 小森文夫

    日本物理学会2015年秋季大会  2015.9 

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    Venue:大阪府  

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Awards

  • "第10回日本物理学会論文賞" (共同受賞)

    2005  

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  • "Best Student Presentation Award" at 7th International conference on Electron Spectroscopy (ICES-7)

    1997  

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Research Projects

  • Creation of bismuth layered materials with black phosphorus structure and control of their electronic structures

    Grant number:20H02617  2020.4 - 2023.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

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    Grant amount:\9100000 ( Direct Cost: \7000000 、 Indirect Cost:\2100000 )

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  • Electronic states of bismuth layered materials with black-phosphorus-like structure

    Grant number:17K05493  2017.4 - 2022.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

    Nakatsuji Kan

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    Grant amount:\4550000 ( Direct Cost: \3500000 、 Indirect Cost:\1050000 )

    Bi(110) ultra-thin films with black-phosphorous-like (BP-like) structure attract much interest as a candidate of two-dimensional topological insulator. In the present study, the atomic and electronic structures of Bi(110) ultra-thin films grown on silicon substrates are systematically investigated by angle-resolved photoelectron spectroscopy and scanning tunneling microscopy. It was reveled that the internal atomic structure of the film below 8 atomic layers is BP-like. The films are hole-doped by charge transfer from the substrate. The two-step growth in which the Bi atoms are deposited at 100 K followed by annealing to room temperature resulted in the films with unique height in a wide area.

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  • Ultra-thin Bi layered films

    Grant number:15K13360  2015.4 - 2017.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Challenging Exploratory Research

    Hirayama Hiroyuki

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    Grant amount:\3900000 ( Direct Cost: \3000000 、 Indirect Cost:\900000 )

    Ultra-thin Bi(110) islands were obtained by the deposition of Bi atoms at the Si(111) Si(111)√3x√3-B substrate at room temperature. The Bi islands had the shape elongated to one of the six specific orientations due to the commensuration of the Bi(110) and Si(111)√3x√3 unit lattices. The atomically-resoled STM images showed that the islands were the Bi(110) islands. However, the Bi(110) islands had the same atomic arrangement at the top surface of the islands in both the trivial A7 and possibly non-trivial, two-dimensional topological BP-like crystal phases. Thus, we characterized the electronic state of the islands using STS and ARPES. In both measurements, the islands were suggested to have the BP-like structure.

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  • A study on synthesis and characterization of Siligermanene

    Grant number:26286048  2014.4 - 2017.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

    Hirayama Hiroyuki

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    Grant amount:\16250000 ( Direct Cost: \12500000 、 Indirect Cost:\3750000 )

    The graphene cousin of group IV materials; silicene and germane, are possible to be synthesize only by the epitaxial growth on substrate surfaces. However, on the conventional Ag(111) substrate surfaces, we found that the Si atoms are frequently exchanged with the substrate Ag atoms. It results in the complex growth mechanism which hinders the growth of the bilayer silicene. The strong electronic interaction also destroys the intrinsic Dirac electron nature of silicene on the Ag(111) substrate. In these respect, an alternative substrate with a weak interaction is of highly desired. We investigated the possibility of graphene as the substrate for the silicene growth. But, silicene was found not to grow on graphene. We further explored the direct growth of hBN on Si substrates for the versatile application of silicene and germane for their possible applications as the Si compatible electronic materials.

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  • Electronic structure of the nano-structured transition-metal nitrides on Cu(001) substrates

    Grant number:24510142  2012.4 - 2015.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

    NAKATSUJI Kan, KOMORI Fumio, IIMORI Takushi, KRUKOWSKI Pawel, TAKAGI Yasumasa, YOKOYAMA Toshihiko

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    Grant amount:\5460000 ( Direct Cost: \4200000 、 Indirect Cost:\1260000 )

    The electronic structure, magnetic properties and the growth mechanism of single-atomic layer of MnN and CrN self-assembled nano-islnads on Cu(001) substrate have been investigated. MnN has been revealed to have a magnetic moment and show antiferro- or para-magnetism. Its electronic structure has significant anisotropy due to reduced dimensionality in a single-atomic height of the film. The growth mechanism of CrN nano-islands has been revealed to be very similar to that of MnN. Two kinds of CrN nano-islands were observed to grow on Cu(001) substrate.

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  • Electronic properties of metallic nanowires grown on a germanium substrate

    Grant number:22710095  2010 - 2011

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Young Scientists (B)

    NAKATSUJI Kan, KOMORI Fumio, YAMADA Masamichi, IIMORI Takushi, NIIKURA Ryota, SHIBATA Yuki, IWASAKI Yuma, MOTOMURA Yuya, YOSHIMURA Tsuguo, ISHII Akira, ODA Yasuhiro

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    Grant amount:\4030000 ( Direct Cost: \3100000 、 Indirect Cost:\930000 )

    The atomic and electronic structures of nanowire(one-dimensional ; 1D) and two-dimensional(2D) structures which are formed by one atomic-layer of gold deposition on germanium(001) and(111) substrates have been investigated. The nanowire structure has been revealed to have a metallic surface state with smaller effective mass in the perpendicular direction to the wire, which is contrary to intuitive expectation of 1D electronic structure. The 2D structure has been revealed to have a metallic surface state with Rashba-type spin split due to a large spin-orbit interaction.

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  • Excited states of surface electrons and dynamics of adsorbates

    Grant number:21244048  2009 - 2011

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

    KOMORI Fumio, NAKATSUJI Kan, TANAKA Satoru, WATANABE Shuntaro, SHIN Shik

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    Grant amount:\48750000 ( Direct Cost: \37500000 、 Indirect Cost:\11250000 )

    We have studied dynamics of the atoms and electrons of low-dimensional systems localized at solid surface on the basis of the knowledge of their atomic and electronic structures. Uniaxial anisotropy is found in the distribution of electronic states and the relaxation of electron momentum for newly-fabricated surface systems with one-dimensional and nanometer-scale structures. Motion of atoms at surface is induced by electron energy injected to the surface electronic states through the energy transfer from kinetic energy of the electrons to surface vibration energy of the lattice systems.

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  • Cu(001)表面におけるマンガン窒化物ナノ構造の成長、電子状態と磁性

    Grant number:18740177  2006 - 2007

    日本学術振興会  科学研究費助成事業  若手研究(B)

    中辻 寛

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    Grant amount:\3600000 ( Direct Cost: \3600000 )

    19年度は、Cu(001)表面上におけるマンガン窒化物(MnN)ナノパッチの周期構造の成長過程と原子構造、電子状態と磁性を、走査トンネル顕微鏡(STM)観察、X線光電子分光(XPS)、軟X線吸収分光(XAS)と磁気円二色性(XMCD)と磁気円二色性(XMCD)測定を用いて調べた。XASとXMCD測定は、高エネルギー加速器研究機構と分子科学研究所の放射光施設にて行った。STM観察では、MnNの低被覆率から飽和被覆率に至るまでの過程を詳細に調べ、ナノ周期構造形成のメカニズムぶ、MnNナノパッチが下地Cuに誘起する歪みを緩和するものとして理解できることを明らかにした。この歪み緩和は表面第2層目までで起きており、これまでに知られている弾性歪み緩和モデルとは異なるメカニズムである。この結果をまとめた論文が厩に受理されている。次に、Mn2p内殻吸収端でのXMCD測定を4K、5Tの極低温強磁場下で行ったが、MCDシグナルはゼロであり、強磁性ではないことがわかった。また、Mnは2価イオンのような振る舞いを示すこともわかった。スペクトル形状には入射光偏光依存性が見られたので、これが反強磁性を反映した線二色性(XMLD)なのか、電子状態の異方性を反映しているのかを調べるために、バルクMnN結晶のネール点付近の温度でのXAS測定を行った。これらの結果と、XPS測定によるMn2p,2s内殻スペクトルとを、配置間相互作用を取り入れたクラスター計算によって再現し、電子状態の詳細な情報を議論するべく、現在解析中である。本年度は、国外も含めて3件の学会発表を行い、昨年度の成果をまとめた報文1報も出版された。

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  • Structure and magnetism of ferromagnetic nanodot arrays made using nanopatterns on N-adsorbed Cu surfaces

    Grant number:15510088  2003 - 2004

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (C)

    KOMORI Fumio, NAKATSUJI Kan

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    Grant amount:\3900000 ( Direct Cost: \3900000 )

    When the surfaces is covered by 0.3 ML of N on the flat surface, square patches of Cu(001)-c(2x2)N with the size of 5x5 nm^2 are arranged regularly as a square lattice pattern. By depositing magnetic transition metals on this surface, we can prepare a magnetic dot array of a square arrangement. We studied the mechanisms of the nanopattern and nanodot formations, and their magnetic properties.
    On a vicinal (001) surface to <100> with 0.3 ML nitrogen, we can form one-dimensional array of square N-adsorbed patches separated by monatomic steps. On this surface, one-dimensional array of Co dots are made by depositing 1-2 ML Co. We measured the magnetization curves using magneto-optical Kerr rotation method in ultra high vaccum. Uni-axial magnetic anisotropy parallel to the step edge was found on this sample while the anisotropy is fourfold in the Co films on a flat Cu(001) surface.
    We measured soft X-ray absorption spectra and magnetic circular dichronism on the Co nanodot array. The observed nitrogen K-edge adsorption spectra indicate that the nitrogen is bonding to Co atoms. The dichroism of Co L2,3 was observed as a function of averaged thickness of Co. With decreasing it, the orbital magnetic moment increases.
    The change of the surface electronic structures due to the lattice strain was observed using photoemission spectroscopy on the partially nitrogen adsorbed Cu(001) surfaces. The results are consistent with the first-principles calculations. The segregation of nitrogen on Co dots in this system was found using XPS and STM, and is attributed to the lattice strain due to the island formation.

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  • Quantized electronic conduction of metallic nanowire made in low-temperature scanning tunneling microscope

    Grant number:12440097  2000 - 2001

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

    KOMORI Fumio, NAKATSUJI Kan

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    Grant amount:\3300000 ( Direct Cost: \3300000 )

    Atomic-size wires of magnetic metals are formed in a scanning tunneling microscope (STM) by contacting the tip apex to the metal surface followed by withdrawing the tip from the surface. The electronic conduction of these wires depends both on the electronic states including spin states and on the atom arrangement around the wires. In the present study, we have developed a method to measure the conductivity between 4.2 K and room temperature in ultra high vacuum on clean surfaces, and measured the conductance of iron and nickel wires.
    1. We attached an annealing base up to 1200 degree G by electron bombardment to the present STM system to prepare clean surfaces of metal single crystals such as Ni. We also designed and made a new STM for the study of the electronic conduction.
    2. We measured the conductance of the iron nanowires as a function of the displacement between the surface and the STM tip. The observed conductance curves were quantized, and some steps in the conductance curves have hysteresis for repeated displacements. The unit of the quantization is e^2/h as expected in ferromagnetic materials without spin degeneracy. The magnetic field dependence of the conductance is generally small up to 150 mT. Only when the length of the wire is fixed close to the conductance step during the change of the displacement between the surface and the STM tip, the conductance step appears by changing the magnetic field. This is attributed to the effect of magnetostriction.
    3. The results on Ni single crystal is compared with those on Ni thin films. We found the magnetoresitance is dependent on the magnetization process of the substrate.

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  • Ag/Ge(100)表面の構造、電子状態と超伝導

    Grant number:11740169  1999 - 2000

    日本学術振興会  科学研究費助成事業  奨励研究(A)

    中辻 寛

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    Grant amount:\2100000 ( Direct Cost: \2100000 )

    本研究は、極低温において超伝導を示すといわれるAg/Ge(100)表面について光電子分光及び極低温STM/STS測定を行い、表面にのみ存在する超伝導の表面構造と電子状態との相関を明らかにしようとするものである。平成12年度には以下のことを行った。まず、Ag島の電子状態を知るために、高エネルギー加速器研究機構・放射光研究施設の共同利用実験(PAC No.99G153)として、Ge3dおよびAg4dの表面内殻準位シフトと価電子帯の角度分解光電子分光測定を、蒸着温度と蒸着量で決まるいくつかの表面構造の試料について行った。この結果、Ag島、特に2次元的な島は下地Geと強く相互作用してGe清浄表面の表面準位をなくし、代りに新たないくつかの状態を作っている様子や、3次元的な島では既にAgがバルク的な振る舞いを見せることが分かった。これらはこれまでのSTM観察と矛盾しない結果である。またAg島の成長のメカニズムを知るため、室温STM観察を高空間分解能で行い、Agの初期吸着サイトの候補をいくつかに絞ることができた。第一原理計算による安定構造・STM像のシミュレーションにも協力し、実験結果と比較することでいくつかの知見が得られた。さらに、極低温でのSTM/STS観察を高分解能で行うため、新たに導入された極低温STM装置の立ち上げを行い、光電子分光実験で用いたものと同様の試料について、すでに測定にとりかかっている。

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  • Study of surface electronic structure using photoelectron spectroscopy

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    Grant type:Competitive

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  • Control of the surface structure by STM

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  • 光電子分光による表面電子状態の研究

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    Grant type:Competitive

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  • 走査トンネル顕微鏡による表面構造制御

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