Updated on 2025/12/06

写真a

 
FUNAKUBO HIROSHI
 
Organization
School of Materials and Chemical Technology Professor
Title
Professor
External link

News & Topics
  • 高電圧処理不要で高い性能を示す圧電体膜の低温作製に成功 高性能の圧力・加速度センサや、振動発電の実現に期待

    2020/10/13

    Languages: Japanese

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    要点-高電圧処理を必要としない圧電体膜の作製に成功-酸化物膜では最高値であり、窒化物膜にも匹敵するセンサ性能定数を達成-力を利用したセンサおよびエナジーハーベスタ(振動発電機)への応用に期待概要東京工業大学物質理工学院材料系の舟窪浩教授(元素戦略研究センター兼任)、舘山明紀大学院生(博士後期課程2年

  • 高い強誘電性を有する窒化物強誘電体の薄膜化に成功 低消費電力の不揮発性メモリへの応用に期待

    2020/09/23

    Languages: Japanese

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    要点-高い強誘電性を有する窒化アルミニウムスカンジウムで、これまでよりさらに強誘電性が高い膜の作製に成功。-10万分の1ミリメートル以下の薄い窒化アルミニウムスカンジウム薄膜でも強誘電性を示すことを世界で初めて確認。-低消費電力で動作する、不揮発性メモリへ

  • 圧電体の複雑な結晶構造変化の高速応答を直接測定 ―IoTセンサーの高性能化に期待―

    2017/08/30

    Languages: Japanese

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    IoTセンサー等で利用される圧電体の結晶構造が高速で変化する様子を観察 圧電性の発現機構解明に貢献 新規の圧電性物質の探索や非鉛圧電体材料の開発を加速

  • High-speed switching for ultrafast electromechanical switches and sensors

    2017/08/30

    Languages: English

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    Scientists at Tokyo Tech, Nagoya University, Japan Synchrotron Radiation Research Institute (JASRI), National Institute for Materials Science (NIMS) and University of New South Wales have observed high-speed switching in Pb(Zr0.4Ti0.6)O3 thin films under applied rectangular electric field pulses. Unlike the slow ferroelastic domain switching expected for ceramics, high-speed sub-microsecond ferroelastic domain switching and simultaneous lattice deformation are directly observed for the Pb(Zr0.4Ti0.6)O3 thin films. This exciting finding paves the way for high-frequency ultrafast electromechanical switches and sensors.

  • 振動発電の高効率化に新展開:強誘電体材料のナノサイズ化による新たな特性制御手法を発見

    2017/07/13

    Languages: Japanese

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    名古屋大学 大学院工学研究科(研究科長:新美智秀)兼 科学技術振興機構さきがけ研究者の山田智明(やまだ ともあき)准教授らの研究グループは、物質・材料研究機構 技術開発・共用部門の坂田修身(さかた おさみ)ステーション長、東京工業大学 物質理工学院の舟窪浩(ふなくぼ ひろし)教授、愛知工業大学 工学部の生津資大(なまづ たかひろ)教授、静岡大学 電子工学研究所の脇谷尚樹(わきや なおき)教授、スイス連邦工科大学 ローザンヌ校 材料研究所のNava Setter(ナバ・セッター)名誉教授らの研究グループと共同で、振動発電の効率向上につながる強誘電体材料の新たな特性制御手法を発見しました。

  • Ultra-thin ferroelectric material for next-generation electronics

    2016/10/12

    Languages: English

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    Scientists at Tokyo Tech have demonstrated the potential of a new, thin-film ferroelectric material that could improve the performance of next-generation sensors and semi-conductors.

  • 酸化ハフニウム基強誘電体の基礎特性を解明―超高密度で高速動作する不揮発性メモリー実現に道―

    2016/09/12

    Languages: Japanese

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    概要 東京工業大学 元素戦略研究センター(センター長 細野秀雄教授)の清水荘雄特任助教と物質理工学院兼同センターの舟窪浩教授、東北大学 金属材料研究所の今野豊彦教授と木口賢紀准教授、物質・材料研究機構 技術開発・共用部門 坂田修身ステーション長らの研究グループは、スマホやパソコンのトランジスタ(スイッチ)に使われている酸化ハフニウムを基本組成とした、強誘電体の電源を切った時に貯められる電気の量や、使用可能な温度範囲といった基礎特性を解明した。結晶方位を制御した単結晶薄膜を電極上に作製することにより、これまで明らかになっていなかった特性の解明に成功した。その結果、酸化ハフニウム基の強誘電体が従来使用されてきた強誘電体に匹敵する特性を有することが明らかになった。強誘電体を用いたメモリーは、交通機関の定期券等に使用されている非接触式ICカード(電子マネー)として実用化されている。今回の成果によって明らかになった優れた特性と、これまでの物質では不可能であった薄膜化しても特性が劣化しない特性を活用すれば、メモリーの飛躍的な高密度化が期待できる。今回の研究成果はネイチャー誌の姉妹誌である学術誌「サイエンティフィックレポート(Scientific Reports)」オンライン版に9月9日付で掲載された。

  • Dynamics of nuclear fission at low excitation energy

    2015/08/24

    Languages: English

  • 強誘電体の極薄単結晶膜を世界で初めて作製

    2015/07/30

    Languages: Japanese

  • 広く使用されている圧電体の圧電基礎特性の測定に成功 ―60年間の問題に決着、新規非鉛圧電体開発に道―

    2014/07/28

    Languages: Japanese

  • 鉛を排除したマイクロデバイス用圧電体薄膜の開発 -毒性元素やプロセス汚染元素を使わず、過去最高の使用温度を実現-

    2012/03/14

    Languages: Japanese

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    東京工業大学総合理工学研究科の舟窪浩准教授とキヤノン、上智大学理工学部の内田寛准教授らの研究グループは、毒性元素の鉛を使わずに、過去最高の使用可能温度と鉛系圧電体に匹敵する特性を有する圧電体薄膜(用語1)の開発に成功した。しかも開発した圧電体薄膜は半導体に悪影響を及ぼすナトリウムやカリウムも含有しないため、シリコンを用いたマイクロデバイス(MEMS(用語2))にも使用可能である。従来、高圧下でしか合成できなかった亜鉛酸チタン酸ビスマス[Bi(Zn1/2Ti1/2)O3]を、他のビスマス含有ペロブスカイトと固溶(用語3)させることで安定化することに成功した。半導体プロセスへの圧電体組み込みだけでなく、鉛を含まないため特に安全性が重視される医療分野への展開も期待できるなど、圧電MEMSの応用分野を飛躍的に広げる可能性が見込まれる。

  • ナノドメイン構造を有する圧電体薄膜の超高速応答を実証

    2011/12/13

    Languages: Japanese

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    高輝度光科学研究センター(JASRI)、東京工業大学、物質・材料研究機構(NIMS)及び京都大学は、動作の切り替え(スイッチング)の更なる高速化を可能にすると期待されている、ナノドメイン と呼ばれる微小領域を有する新しい圧電体薄膜が200ナノ秒(*1、1千万分の2秒)という超高速でスイッチング可能であることを世界で初めて確認しました。圧電体薄膜(*2)は、電気信号により構造が変化する性質を活かして、インクジェットプリンタで使用されるマイクロデバイス(Micro Electro Mechanical Systems、MEMS*3)等の動力源として利用されています。現在の圧電体薄膜では、スイッチング時間を十分制御できていません。高速のスイッチングが実現できれば産業応用への広がりやより高性能な製品の開発を期待できます。

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Degree

  • Doctor of Engineering ( Tokyo Institute of Technology )

Papers

  • No-heating deposition of ferroelectric epitaxial Hf0.5Zr0.5O2 films using a sputtering method with precise RF power density and thickness control

    Takanori Mimura, Yoshiko Nakamura, Yutaro Tsuchiya, Kazuki Okamoto, Hiroshi Funakubo

    Journal of Materiomics   12 ( 1 )   2026.1

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    DOI: 10.1016/j.jmat.2025.101129

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  • Thickness Scaling of Integrated Pt/(Al0.9Sc0.1)N/Pt Capacitor Stacks to 30 nm

    Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Nana Sun, Yoshiko Nakamura, Kazuki Okamoto, Hiroshi Funakubo

    Advanced Electronic Materials   2025.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/aelm.202500451

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  • Ferroelectric-paraelectric phase transition in Ba(ZrxTi1_x)O3 epitaxial films on MgO substrates for enhanced tunable dielectric properties

    Ryo Takahashi, Yosuke Hamasaki, Shinya Sawai, Yasuyuki Hirata, Yoshihiro Miyauchi, Shintaro Yasui, Hiroshi Funakubo, Yoshitaka Ehara, Ken Nishida

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   133 ( 11 )   663 - 669   2025.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.2109/jcersj2.25071

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  • Beyond Optimization: Exploring Novelty Discovery in Autonomous Experiments

    Ralph Bulanadi, Jawad Chowdhury, Hiroshi Funakubo, Maxim Ziatdinov, Rama Vasudevan, Arpan Biswas, Yongtao Liu

    ACS Nanoscience Au   2025.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsnanoscienceau.5c00106

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  • Growth of wurtzite ferroelectrics

    Simon Fichtner, Masato Uehara, Isabel Streicher, Samuel Yang, Jon-Paul Maria, Zetian Mi, Stefano Leone, Hiroshi Funakubo

    MRS BULLETIN   50 ( 9 )   1079 - 1093   2025.9

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  • Direct observation of pulse poling effect on reversible 90° domain wall motion in tetragonal Pb(Zr,Ti)O3 thin films

    Yoshitaka Ehara, Ayumi Wada, Hitoshi Morioka, Takeshi Kobayashi, Shintaro Yasui, Hiroshi Funakubo

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   133 ( 9 )   542 - 547   2025.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.2109/jcersj2.25024

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  • Ultra-low-strain ferroelectric PbTiO3 films achieved via well-lattice-matched low-temperature epitaxy Reviewed

    Yuxian Hu, Kazuki Okamoto, Hiroshi Funakubo

    Acta Materialia   296   2025.9

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.actamat.2025.121315

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  • High Power Factor with Compositional and Temperature Stabilities in (CaxSr1–x)Si2 Thin Films near Room Temperature

    Kodai Aoyama, Takao Shimizu, Takayoshi Katase, Yoshisato Kimura, Hiroshi Funakubo

    ACS Applied Energy Materials   8 ( 16 )   12092 - 12098   2025.8

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    DOI: 10.1021/acsaem.5c01558

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  • Effect of Sc content on the polarity of AlScN thin films deposited on indium tin oxide by radio frequency-magnetron sputtering

    Xuankun Liu, Kotoko Abe, Xueyou Yuan, Kazuki Okamoto, Hiroshi Funakubo, Shinya Kondo, Tomoaki Yamada

    Japanese Journal of Applied Physics   64 ( 8 )   2025.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/adf7b2

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  • Composition dependence of electro-optic effect in (111)/(11−1)-oriented epitaxial rhombohedral Pb(Zr x Ti1−x )O3 thin films prepared by chemical solution deposition

    Shinya Kondo, Tatsuki Utsunomiya, Kazuki Okamoto, Miki Nakahata, Osamu Ikeda, Tomotaka Nakatani, Rosantha Kumara, tomoyuki koganezawa, Hiroshi Funakubo, Osami Sakata, Takashi TERANISHI, Akira Kishimoto, Tomoaki Yamada

    Japanese Journal of Applied Physics   64 ( 8 )   2025.7

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    DOI: 10.35848/1347-4065/adf4f0

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  • Kinetic Understanding of Field-Induced Phase Transition from Tetragonal to Ferroelectric Orthorhombic Phase in Ferroelectric CeO2-HfO2-ZrO2 Films. International journal

    Kohei Shimonosono, Yoshiki Maekawa, Nachi Chaya, Kazuki Okamoto, Wakiko Yamaoka, Yasushi Kawashima, Yukari Inoue, Pochun Hsieh, Akash Saha, Albert Suceava, Sankalpa Hazra, Hiroko Yokota, Venkatraman Gopalan, Hiroshi Funakubo

    ACS applied electronic materials   7 ( 14 )   6273 - 6280   2025.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsaelm.5c00262

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  • Ferroelectric behavior of divalent cation‒doped LiGaO2 with a distorted wurtzite-type structure

    Sou Yasuhara, Yuto Tomizawa, Kazuki Okamoto, Masaki Tozuka, Ayato Nakagawa, Shintaro Yasui, Hiroshi Funakubo, Takuya Hoshina

    Japanese Journal of Applied Physics   64 ( 8 )   2025.7

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    DOI: 10.35848/1347-4065/adefe9

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  • Dependence of the dielectric tunability in Ba(Zr0.2Ti0.8)O3 films deposited on (001) SrTiO3 substrates on film thickness and temperature

    Ryo Takahashi, Yosuke Hamasaki, Shinya Sawai, Nikola Novak, Shintaro Yasui, Hiroshi Funakubo, Yoshitaka Ehara, Ken Nishida

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   133 ( 7 )   2025.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.2109/jcersj2.25014

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  • Effect of Ce/(Hf plus Ce) ratio on ferroelectric and piezoelectric properties and effect of film thickness on ferroelectricity for thick CeO2-HfO2 films deposited by sputtering method without substrate heating

    Yu-Ta Chen, Kazuki Okamoto, Nana Sun, Yuxian Hu, Nachi Chaya, Kohei Shimonosono, Miki Nakahata, Hiroyuki Ono, Wakiko Yamaoka, Yukari Inoue, Hiroshi Funakubo

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   133 ( 7 )   308 - 314   2025.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.2109/jcersj2.25009

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  • Beyond 100% Contribution of Domain Switching to Piezoelectric Response in (100)/(001)-Oriented Tetragonal Multidomain Pb(Zr, Ti)O3 Films Epitaxially Grown on Si substrates

    Miki Nakahata, Kazuki Okamoto, Keisuke Ishihama, Tomoaki Yamada, Hiroshi Funakubo

    ACS Applied Electronic Materials   7 ( 12 )   5570 - 5576   2025.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsaelm.5c00556

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  • Polarization switching on the open surfaces of the wurtzite ferroelectric nitrides: ferroelectric subsystems and electrochemical reactivity

    Yongtao Liu, Anton V. Ievlev, Eugene A. Eliseev, Nana Sun, Kazuki Okamoto, Hiroshi Funakubo, Anna N. Morozovska, Sergei Kalinin

    ADVANCED MATERIALS   2025.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/adma.202511001

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    arXiv

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    Other Link: http://arxiv.org/pdf/2506.14452v1

  • Domain Switching on the Pareto Front: Multi-Objective Deep Kernel Learning in Automated Piezoresponse Force Microscopy

    Yu Liu, Utkarsh Pratiush, Kamyar Barakati, Hiroshi Funakubo, Ching-Che Lin, Jaegyu Kim, Lane W. Martin, Sergei V. Kalinin

    2025.6

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    Ferroelectric polarization switching underpins the functional performance of
    a wide range of materials and devices, yet its dependence on complex local
    microstructural features renders systematic exploration by manual or grid-based
    spectroscopic measurements impractical. Here, we introduce a multi-objective
    kernel-learning workflow that infers the microstructural rules governing
    switching behavior directly from high-resolution imaging data. Applied to
    automated piezoresponse force microscopy (PFM) experiments, our framework
    efficiently identifies the key relationships between domain-wall configurations
    and local switching kinetics, revealing how specific wall geometries and defect
    distributions modulate polarization reversal. Post-experiment analysis projects
    abstract reward functions, such as switching ease and domain symmetry, onto
    physically interpretable descriptors including domain configuration and
    proximity to boundaries. This enables not only high-throughput active learning,
    but also mechanistic insight into the microstructural control of switching
    phenomena. While demonstrated for ferroelectric domain switching, our approach
    provides a powerful, generalizable tool for navigating complex,
    non-differentiable design spaces, from structure-property correlations in
    molecular discovery to combinatorial optimization across diverse imaging
    modalities.

    arXiv

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    Other Link: http://arxiv.org/pdf/2506.08073v1

  • Exploring Domain Wall Pinning in Ferroelectrics via Automated High Throughput AFM

    Kamyar Barakati, Yu Liu, Hiroshi Funakubo, Sergei V. Kalinin

    ACS Applied Materials & Interfaces   17 ( 47 )   65262 - 65269   2025.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsami.5c14008

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    arXiv

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    Other Link: http://arxiv.org/pdf/2505.24062v1

  • Effect of H2 heat treatment on the switching behavior of ferroelectric AlScN capacitors

    Nana Sun, Kazuki Okamoto, Shinnosuke Yasuoka, Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Haidong Lu, Alexei Gruverman, Hiroshi Funakubo

    APL Materials   13 ( 5 )   2025.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0268889

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  • Curiosity Driven Exploration to Optimize Structure-Property Learning in Microscopy

    Aditya Vatsavai, Ganesh Narasimha, Yongtao Liu, Jawad Chowdhury, Jan-Chi Yang, Hiroshi Funakubo, Maxim Ziatdinov, Rama Vasudevan

    DIGITAL DISCOVERY   4 ( 8 )   2188 - 2197   2025.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/d5dd00119f

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    arXiv

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    Other Link: http://arxiv.org/pdf/2504.20011v2

  • Impact of film composition on crystal structure and ferroelectricity in (Al1−x−yGaxScy)N ternary wurtzite thin films

    Reika Ota, Nana Sun, Kazuki Okamoto, Shinnosuke Yasuoka, Yoshihiro Ueoka, Daiki Shono, Masami Mesuda, Hiroshi Funakubo

    APL Materials   13 ( 4 )   2025.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0261572

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  • Probing of Polarization Reversal in Ferroelectric (Al,Sc)N Films Using Single‐ and Tri‐Layered Structures With Different Sc/(Al+Sc) Ratio Reviewed

    Shinnosuke Yasuoka, Takao Shimizu, Kazuki Okamoto, Nana Sun, Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Alexei Gruverman, Hiroshi Funakubo

    Advanced Materials Interfaces   12 ( 2400627 )   2025.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/admi.202400627

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  • Advances and challenges in novel non-perovskite-based ferroelectrics film for memory device applications. Reviewed International journal

    HIROSHI FUNAKUBO, Kazuki Okamoto, Takanori Mimura

    Japanese Journal of Applied Physic   Vol. 64 ( 3 )   030001   2025.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/adb46c

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  • Realization of Non‐Equilibrium Wurtzite Structure in Heterovalent Ternary MgSiN2 Film Grown by Reactive Sputtering

    Sotaro Kageyama, Kazuki Okamoto, Shinnosuke Yasuoka, Keisuke Ide, Kota Hanzawa, Yoshiomi Hiranaga, Pochun Hsieh, Sankalpa Harza, Albert Suceava, Akash Saha, Hiroko Yokota, Kei Shigematsu, Masaki Azuma, Venkatraman Gopalan, Hiroshi Uchida, Hidenori Hiramatsu, Hiroshi Funakubo

    Advanced Electronic Materials   11 ( 9 )   2025.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/aelm.202400880

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  • Invariant discovery of features across multiple length scales: Applications in microscopy and autonomous materials characterization

    Aditya Raghavan, Utkarsh Pratiush, Mani Valleti, Richard (Yu) Liu, Reece Emery, Hiroshi Funakubo, Yongtao Liu, Philip Rack, Sergei Kalinin

    Journal of Applied Physics   137 ( 3 )   2025.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0233070

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    arXiv

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    Other Link: http://arxiv.org/pdf/2408.00229v1

  • Constructing Morphotropic Phase Boundary in Epitaxial BiFeO3 on SrTiO3 by Suppression of Strain Relaxation

    Yue-Yu-Shan Cheng, Yuxian Hu, Taichi Murashita, Yu Song, Hongliang Wang, Kazuki Okamoto, Lisha Liu, Yi-Xuan Liu, Xin Zhang, Houbing Huang, Jing-Feng Li, Hiroshi Funakubo

    ADVANCED FUNCTIONAL MATERIALS   35 ( 1 )   2025.1

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/adfm.202409240

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  • Low-temperature film deposition of all-proportional PbZrO<sub>3</sub>-PbTiO<sub>3</sub> system using microwave-assisted hydrothermal reaction

    Kohei Noji, Yukie Yokota, Hiromi Shima, Hiroshi Funakubo, Hiroshi Uchida

    Journal of the Ceramic Society of Japan   133 ( 7 )   281 - 287   2025

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.2109/jcersj2.25011

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  • Excellent piezoelectric and ferroelectric properties of ScxGa1−xN alloy with high Sc concentration

    Masato Uehara, Kenji Hirata, Yoshiko Nakamura, Sri Ayu Anggraini, Kazuki Okamoto, Hiroshi Yamada, Hiroshi Funakubo, Morito Akiyama

    APL Materials   12 ( 12 )   2024.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0236507

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  • SANE: Strategic Autonomous Non-Smooth Exploration for Multiple Optima Discovery in Multi-modal and Non-differentiable Black-box Functions

    Arpan Biswas, Rama Vasudevan, Rohit Pant, Ichiro Takeuchi, Hiroshi Funakubo, Yongtao Liu

    DIGITAL DISCOVERY   4 ( 3 )   853 - 867   2024.9

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1039/d4dd00299g

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    arXiv

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    Other Link: http://arxiv.org/pdf/2409.12295v1

  • Bayesian Conavigation: Dynamic Designing of the Material Digital Twins via Active Learning International journal

    Boris N. Slautin, Yongtao Liu, Hiroshi Funakubo, Rama K. Vasudevan, Maxim Ziatdinov, Sergei V. Kalinin

    ACS Nano   18 ( 36 )   24898 - 24908   2024.9

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    DOI: 10.1021/acsnano.4c05368

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  • Ta5+-substitution effects on crystal structure and ferroelectric property in HfO2-based films

    Yoshiki Maekawa, Takanori Mimura, Yoshiyuki Inaguma, Hiroshi Uchida, Yuxian Hu, Kazuki Okamoto, Hiroshi Funakubo

    Japanese Journal of Applied Physics   63 ( 9 )   2024.9

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    DOI: 10.35848/1347-4065/ad6fa9

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  • Scientific Exploration with Expert Knowledge (SEEK) in Autonomous Scanning Probe Microscopy with Active Learning

    Utkarsh Pratiush, Hiroshi Funakubo, Rama Vasudevan, Sergei V. Kalinin, Yongtao Liu

    DIGITAL DISCOVERY   4 ( 1 )   252 - 263   2024.8

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    DOI: 10.1039/d4dd00277f

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  • Strain Control of (001)-Polar-Axis-Oriented Epitaxial Y-Doped HfO2 Thin Films

    Yoshiki Maekawa, Koji Hirai, Kazuki Okamoto, Takao Shimizu, Hiroshi Funakubo

    ACS Applied Electronic Materials   6 ( 8 )   5525 - 5535   2024.7

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    DOI: 10.1021/acsaelm.4c00368

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  • High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films

    NANA SUN, Kazuki Okamoto, Shinnosuke Yasuoka, Soshun Doko, NAOKO, Toshikazu Irisawa, Koji Tsunekawa, Takayoshi Katase, tomoyuki koganezawa, Tomotaka Nakatani, Loku Singgappulige Rosantha Kumara, Osami Sakata, Hiroshi Funakubo

    Applied Physics Letters   125 ( 3 )   2024.7

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    DOI: 10.1063/5.0202063

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  • Effects of the alkaline solution concentration and deposition temperature on film thickness, crystal structure and ferroelectric properties of epitaxial PbTiO<sub>3</sub> films grown by hydrothermal method

    Yuxian Hu, Rurika Kubota, Kazuki Okamoto, Takahisa Shiraishi, Hiroshi Funakubo

    Journal of the Ceramic Society of Japan   132 ( 7 )   295 - 303   2024.7

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    DOI: 10.2109/jcersj2.23207

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  • Post heat treatment e ff ect on crystal structure and ferroelectricity of (1-x)(Bi,K)TiO3 - xCaTiO3 solid solution epitaxial fi lms grown by hydrothermal method

    Taichi Murashita, Yuxian Hu, Yuma Takahashi, Reika Ota, Kazuki Okamoto, Hiroshi Funakubo

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   132 ( 7 )   324 - 329   2024.7

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    DOI: 10.2109/jcersj2.23210

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  • Data-Driven Analysis of High-Resolution Hyperspectral Image Data Sets through Nanoscale Capacitance–Voltage Measurements to Visualize Ferroelectric Domain Dynamics

    Yoshiomi Hiranaga, Yuki Noguchi, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho

    ACS Applied Nano Materials   7 ( 8 )   8525 - 8536   2024.4

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    DOI: 10.1021/acsanm.3c04636

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  • Unraveling the impact of initial choices and in-loop interventions on learning dynamics in autonomous scanning probe microscopy

    Boris N. Slautin, Yongtao Liu, Hiroshi Funakubo, Sergei V. Kalinin

    Journal of Applied Physics   2024.4

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    The current focus in Autonomous Experimentation (AE) is on developing robust
    workflows to conduct the AE effectively. This entails the need for well-defined
    approaches to guide the AE process, including strategies for hyperparameter
    tuning and high-level human interventions within the workflow loop. This paper
    presents a comprehensive analysis of the influence of initial experimental
    conditions and in-loop interventions on the learning dynamics of Deep Kernel
    Learning (DKL) within the realm of AE in Scanning Probe Microscopy. We explore
    the concept of 'seed effect', where the initial experiment setup has a
    substantial impact on the subsequent learning trajectory. Additionally, we
    introduce an approach of the seed point interventions in AE allowing the
    operator to influence the exploration process. Using a dataset from
    Piezoresponse Force Microscopy (PFM) on PbTiO3 thin films, we illustrate the
    impact of the 'seed effect' and in-loop seed interventions on the effectiveness
    of DKL in predicting material properties. The study highlights the importance
    of initial choices and adaptive interventions in optimizing learning rates and
    enhancing the efficiency of automated material characterization. This work
    offers valuable insights into designing more robust and effective AE workflows
    in microscopy with potential applications across various characterization
    techniques. The analysis code that supports the funding is publicly available
    at https://github.com/Slautin/2024_Seed_effect_DKL_BO.

    DOI: 10.1063/5.0198316

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  • Phase Identification of 850 nm Thick 7%YO1.5–93%HfO2 Films by Surface and Cross-Sectional Raman Spectroscopies

    Takanori Mimura, Yuma Takahashi, Takahisa Shiraishi, Masanori Kodera, Reijiro Shimura, Keisuke Ishihama, Kazuki Okamoto, Hiroki Moriwake, Ayako Taguchi, Takao Shimizu, Yasuhiro Fujii, Akitoshi Koreeda, Hiroshi Funakubo

    ACS Applied Electronic Materials   6 ( 4 )   2500 - 2506   2024.4

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  • The ferroelectric and piezoelectric properties of (Hf1−x Ce x )O2 films on indium tin oxide/Pt/TiO x /SiO2/(100)Si substrates obtained using a no-heating radio-frequency magnetron sputtering deposition method

    Nachi Chaya, Kazuki Okamoto, Koji Hirai, Shinnosuke Yasuoka, Yukari Inoue, Wakiko Yamaoka, Hiroshi Funakubo

    Japanese Journal of Applied Physics   63 ( 4 )   2024.4

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  • Polarization reversal dynamics of ferroelastic nanodomains in Pb(Zr,Ti)O3 thin film

    Je Oh Choi, Bo Wang, Hiroshi Funakubo, Ji Hye Lee, Su Yong Lee, Long-Qing Chen, Tae Won Noh, Ji Young Jo, Hyeon Jun Lee

    Acta Materialia   2024.3

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    DOI: 10.1016/j.actamat.2024.119688

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  • Orientation-Controlled 400 nm Thick Ferroelectric PbTiO3 Films with Low Strain Directly Grown below the Curie Temperature by the Hydrothermal Method

    Yuxian Hu, Rurika Kubota, Kazuki Okamoto, Takahisa Shiraishi, Hiroshi Funakubo

    Crystal Growth & Design   2024.2

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    DOI: 10.1021/acs.cgd.3c01367

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  • Domain structures of PbTiO3 and Pb(Zr,Ti)O3 thin films controlled by tensile strain induced by a Sr(Zr,Ti)O3 buffer layer

    Tomohide Morikawa, Masanori Kodera, Takao Shimizu, Keisuke Ishihama, Yoshitaka Ehara, Osami Sakata, Hiroshi Funakubo

    Applied Physics Letters   2024.1

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    DOI: 10.1063/5.0180449

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  • Achieving High Piezoelectric Performance across a Wide Composition Range in Tetragonal (Bi,Na)TiO3–BaTiO3 Films for Micro-electromechanical Systems International journal

    Keisuke Ishihama, Takao Shimizu, Kazuki Okamoto, Akinori Tateyama, Wakiko Yamaoka, Risako Tsurumaru, Shintaro Yoshimura, Yusuke Sato, Hiroshi Funakubo

    ACS Applied Materials & Interfaces   16 ( 1 )   1308 - 1316   2024.1

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    Tetragonal (1-x)(Bi,Na)TiO3-xBaTiO3 films exhibit enhanced piezoelectric properties due to domain switching over a wide composition range. These properties were observed over a significantly wider composition range than the morphotropic phase boundary (MPB), which typically has a limited composition range of 1-2%. The polarization axis was found to be along the in-plane direction for the tetragonal composition range x = 0.06-1.0, attributed to the tensile thermal strain from the substrate during cooling after the film formation. A "two-step increase" in remanent polarization against an applied maximum electric field was observed at the high-field region due to the domain switching, and a very high piezoelectric response (effective d33 value, denoted as d33,f) over 220 pm/V was achieved for a wide composition range of x = 0.2-0.5 with high tetragonality, exceeding previously reported values for bulk ceramics. Moreover, a transverse piezoelectric coefficient, e31,f, of 19 C/m2 measured using a cantilever structure was obtained for a composition range of at least 10 atom % (for both x = 0.2 and 0.3). This value is the highest reported for Pb-free piezoelectric thin films and is comparable to the best data for Pb-based thin films. Reversible domain switching eliminates the need for conventional MPB compositions, allowing an improvement in the piezoelectric properties over a wider composition range. This strategy could provide a guideline for the development of environmentally acceptable lead-free piezoelectric films with composition-insensitive piezoelectric performance to replace Pb-based materials with MPB composition, such as PZT.

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  • Evaluation of ferroelectricity in a distorted wurtzite-type structure of Sc-doped LiGaO2 International journal

    Sou Yasuhara, Ayato Nakagawa, Kazuki Okamoto, Takahisa Shiraishi, Hiroshi Funakubo, Shintaro Yasui, Mitsuru Itoh, Takaaki Tsurumi, Takuya Hoshina

    RSC Advances   14 ( 20 )   13900 - 13904   2024

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    DOI: 10.1039/D4RA02296C

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  • Thickness Dependence of Ferroelectricity for Thin (Al0.9Sc0.1)N-based FeRAM

    Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Nana Sun, Yoshiko Nakamura, Kazuki Okamoto, Hiroshi Funakubo

    2024 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI, IMFEDK 2024   2024

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    DOI: 10.1109/IMFEDK64776.2024.10814248

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  • Analysis of Nanoscale Ferroelectric Domain Dynamics Based on Image Processing of Local C-V Maps

    Yohiomi Hiranaga, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho

    2024 IEEE ULTRASONICS, FERROELECTRICS, AND FREQUENCY CONTROL JOINT SYMPOSIUM, UFFC-JS 2024   2024

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    DOI: 10.1109/UFFC-JS60046.2024.10793582

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  • Development of Integrated Measurement System for Local C-V Mapping and Piezoresponse Force Microscopy

    Yuki Noguchi, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yohiomi Hiranaga

    2024 IEEE ULTRASONICS, FERROELECTRICS, AND FREQUENCY CONTROL JOINT SYMPOSIUM, UFFC-JS 2024   2024

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    DOI: 10.1109/UFFC-JS60046.2024.10794165

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  • Introduction of strain-relaxed 90° domain structure by lattice mismatch in tetragonal ferroelectric (Bi,K)TiO3 epitaxial films grown hydrothermally below Curie temperature

    Rurika Kubota, Yuxian Hu, Takahisa Shiraishi, Akinori Tateyama, Yoshiharu Ito, Minoru Kurosawa, Hiroshi Funakubo

    Journal of Applied Physics   134 ( 23 )   2023.12

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    Epitaxial (Bi, K)TiO3 films with 800- to 900-nm thicknesses were grown hydrothermally at 200 °C on SrTiO3 substrates covered with SrRuO3 layers. Perfectly (001)-oriented films grew on (100)SrTiO3 due to good lattice matching. Films on (110)SrTiO3 had mixed orientations of dominant (110) and minor (101), while three types of (111) orientations with in-plane 120° rotation were observed for the film on (111)SrTiO3. The (101) and (110) orientations of the film deposited on (110)SrTiO3 were tilted by approximately 2.6° and 1.6°, respectively, from surface normal due to the formation of a 90° domain with a twinning plane. The plane-view measurement for the film deposited on (111)SrTiO3 showed nine spots. These are explained by the presence of 15 possible spots resulting from the relaxed 90° domain combination and by overlapping. The lattice parameters of these films explain the tilting angles of these domains. These results reveal the formation of perfectly relaxed 90° domain structures for films grown on (110) and (111)SrTiO3. This differs from our previous data for tetragonal Pb(Zr,Ti)O3 films grown above TC on (110) and (111)SrTiO3 because the present films directly grow the ferroelectric films below TC without phase change. The tilting angle of the polar-axis and the volume fraction of the 90° domain can explain the piezoelectric responses of these films assuming that films have purely an up-state. This suggests that these films show almost pure up-state polarization without 180° domains, at least along surface-normal directions. These data show that these films have domain structures different from the well-known ones for the tetragonal Pb(Zr,Ti)O3 films.

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  • Unconventional polarization fatigue in van der Waals layered ferroelectric ionic conductor CuInP2S6. International journal

    Ziwen Zhou, Shun Wang, Zhou Zhou, Yiqi Hu, Qiankun Li, Jinshuo Xue, Zhijian Feng, Qingyu Yan, Zhongshen Luo, Yuyan Weng, Rujun Tang, Xiaodong Su, Fengang Zheng, Kazuki Okamoto, Hiroshi Funakubo, Lixing Kang, Liang Fang, Lu You

    Nature communications   14 ( 1 )   8254 - 8254   2023.12

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    Recent progress in two-dimensional ferroelectrics greatly expands the versatility and tunability in van der Waals heterostructure based electronics. However, the switching endurance issue that widely plagues conventional ferroelectrics in practical applications is hitherto unexplored for van der Waals layered ferroelectrics. Herein, we report the observation of unusual polarization fatigue behaviors in van der Waals layered CuInP2S6, which also possesses finite ionic conductivity at room temperature. The strong intertwinement of the short-range polarization switching and long-range ionic movement in conjunction with the van der Waals layered structure gives rise to unique morphological and polarization evolutions under repetitive electric cycles. With the help of concerted chemical, structural, lattice vibrational and dielectric analyses, we unravel the critical role of the synergy of ionic migration and surface oxidation on the anomalous polarization enhancement and the eventual polarization degradation. This work provides a general insight into the polarization fatigue characteristics in ionically-active van der Waals ferroelectrics and delivers potential solutions for the realization of fatigue-free capacitors.

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  • Scalable ferroelectricity of 20 nm-thick (Al0.8Sc0.2)N thin films sandwiched between TiN electrodes

    Reika Ota, Shinnosuke Yasuoka, Ryoichi Mizutani, Takahisa Shiraishi, Kazuki Okamoto, Kuniyuki Kakushima, Tomoyuki Koganezawa, Osami Sakata, Hiroshi Funakubo

    Journal of Applied Physics   134 ( 21 )   2023.12

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    Ferroelectric (Al, Sc)N thin films have the potential for use in low-power memory applications. This study demonstrates the thickness scalability of ferroelectricity down to an approximately 20 nm-thick (Al0.8Sc0.2)N film sandwiched between microfabricable TiN electrodes. The impact of the deposition gas atmosphere during the sputtering process and the top electrode materials on the crystal structures and ferroelectric properties was investigated for 20–30 nm-thick (Al0.8Sc0.2)N thin films deposited on Si substrates covered with a TiN layer by radio frequency magnetron sputtering. The deposition atmosphere did not strongly affect the crystal structures of the 30 nm-thick (Al0.8Sc0.2)N films but significantly affected their ferroelectric properties. The leakage current density decreased for films deposited under pure N2 gas compared to the films deposited under a gas mixture of 0.67Ar + 0.33N2. The ferroelectric properties of 20 nm-thick (Al0.8Sc0.2)N films were changed by the top electrode materials; both the switching electric field and its maximum applicable electric field increased for the TiN top electrodes compared with the Pt top electrodes, improving the saturation characteristics of the remnant polarization (Pr) against the applied electric field. Consequently, the 20 nm-thick (Al0.8Sc0.2)N film sandwiched between the microfabricable TiN top and bottom electrodes showed ferroelectricity without noticeable degradation with decreasing film thickness; the film maintained large Pr values of over 100 μC/cm2 in the temperature range from room temperature to 150 °C. The present data open the door to scalable ferroelectric random-access memories using almost thickness-degradation-free thin (Al, Sc)N films with microfabricable TiN electrodes.

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  • Impact of proteinuria on long-term prognosis in patients with coronary artery disease. International journal

    Hiroshi Funakubo, Akihito Tanaka, Akihiro Tobe, Takeshige Kunieda, Yoshiaki Kubota, Naoki Yoshioka, Satoshi Otsuka, Nobutaka Kudo, Yoshinori Shirai, Kenji Furusawa, Hideki Ishii, Toyoaki Murohara

    Journal of cardiovascular medicine (Hagerstown, Md.)   24 ( 12 )   900 - 905   2023.12

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    BACKGROUND: This study aimed to investigate the association between proteinuria and long-term prognosis in patients with coronary artery disease. METHODS: This was a single-center observational study. A total of 1351 patients were identified who underwent percutaneous coronary intervention, and whose urine data were available. Patients were divided into two groups according to the presence (n = 245) or absence (n = 1106) of proteinuria. All-cause and cardiovascular deaths were primarily evaluated. RESULTS: The prevalence rates of hypertension and diabetes were significantly higher, and the baseline estimated glomerular filtration rate (eGFR) was lower in patients with proteinuria than in those without proteinuria. During the median follow-up of 4.1 years (interquartile range, 1.7-6.8 years), the occurrences of all-cause and cardiovascular deaths were significantly higher in patients with proteinuria. Multivariable Cox regression analysis indicated that the presence of proteinuria was a significant predictor of cardiovascular death as well as age, BMI, reduced eGFR, and left ventricular ejection fraction. When stratified into four groups based on eGFR category (eGFR <60 or ≥60 ml/min/1.73 m2) and absence or presence of proteinuria, the incidence rates of all-cause and cardiovascular deaths were highest in patients with proteinuria and eGFR less than 60 ml/min/1.73 m2. Furthermore, the incidence rates of all-cause and cardiovascular deaths were significantly higher in patients with proteinuria among both diabetic and nondiabetic patients. CONCLUSION: Proteinuria is associated with the long-term prognosis, and all-cause and cardiovascular deaths in patients with coronary artery disease, regardless of eGFR and the presence or absence of diabetes mellitus.

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  • Invariant polarization switching kinetics in an (Al0.8Sc0.2)N film with frequency and temperature

    Shinnosuke Yasuoka, Ryoichi Mizutani, Reika Ota, Takahisa Shiraishi, Takao Shimizu, Kazuki Okamoto, Masato Uehara, Hiroshi Yamada, Morito Akiyama, Hiroshi Funakubo

    Applied Physics Letters   123 ( 20 )   2023.11

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    In this study, the switching kinetics in a (001)-out-of-plane-oriented (Al0.8Sc0.2)N thin film were systematically investigated as a function of temperature and frequency. The switching behavior followed the Kolmogorov–Avrami–Ishibashi model within the temperature and write-pulse width ranges of 300–473 K and 10 Hz–600 kHz, respectively. The switching speed increased linearly with the electric field, even at high electric fields. The frequency dependence of the coercive field (Ec) evaluated at room temperature revealed that the scaling regime of the domain-wall propagation did not transition to the flow regime, and the switching velocity of the domain increased linearly with the electric field even at high frequencies up to 600 kHz. The invariant domain-wall motion regime implies the potential of using (Al,Sc)N films for high-frequency applications. In addition, a formula for estimating the coercive field of an (Al,Sc)N film was derived by fitting the parameters obtained from the study of switching behavior. The formula indicated that the switching electric field tends to become insensitive to frequency as temperature increases. Moreover, the frequency dependency of the field was minimal even at room temperature. This is a useful index for estimating the drive voltage at the operating frequency and temperature.

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  • Preparation of {100}-oriented (1−x)(Bi,K)TiO3−xCaTiO3 solid-solution epitaxial films by the hydrothermal method and their ferroelectric and piezoelectric properties

    Taichi Murashita, Yuxian Hu, Yuma Takahashi, Reika Ota, Kazuki Okamoto, Hiroshi Funakubo

    Japanese Journal of Applied Physics   2023.11

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  • In situ X-ray diffraction analysis of intrinsic and extrinsic piezoelectric response in (100)/(001)-oriented tetragonal multidomain Pb(Zr, Ti)O3 films epitaxially grown on Si substrates

    Miki Nakahata, Kazuki Okamoto, Keisuke Ishihama, Tomoaki Yamada, Hiroshi Funakubo

    Japanese Journal of Applied Physics   2023.11

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    DOI: 10.35848/1347-4065/ace330

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  • Heterogeneous Carotid Plaque Predicts Cardiovascular Events after Percutaneous Coronary Intervention.

    Akihiro Tobe, Akihito Tanaka, Kenji Furusawa, Yoshinori Shirai, Hiroshi Funakubo, Satoshi Otsuka, Yoshiaki Kubota, Takeshige Kunieda, Naoki Yoshioka, Sara Sato, Nobutaka Kudo, Hideki Ishii, Toyoaki Murohara

    Journal of atherosclerosis and thrombosis   30 ( 9 )   1187 - 1197   2023.9

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    AIM: The relationship between carotid artery ultrasound findings and clinical outcomes in patients who undergo percutaneous coronary intervention (PCI) has not been completely elucidated. METHODS: This single-center retrospective study investigated 691 patients who underwent PCI and carotid ultrasound testing. Maximum carotid intima-media thickness (CIMT) was defined as the greatest CIMT at the maximally thick point among the common carotid artery, carotid bulb, and internal carotid artery. A carotid plaque was defined as vessel wall thickening with a CIMT ≥ 1.5 mm. The characteristics of carotid plaque (heterogeneity, calcification, or irregular/ulcerated surface) were evaluated visually. Patients were divided into those with and without heterogeneous carotid plaque (maximum CIMT ≥ 1.5 mm and heterogeneous texture). The endpoint was the incidence of a major adverse cardiovascular event (MACE) defined as a composite of cardiovascular (CV) death, myocardial infarction, and ischemic stroke. RESULTS: Among 691 patients, 309 were categorized as having a heterogeneous plaque. Patients with heterogeneous plaques were at a higher risk of MACE than those without (p=0.002). A heterogeneous plaque was independently associated with MACE after adjusting for covariates (hazard ratio [HR], 1.71; 95% confidence interval [CI], 1.01-2.90; p=0.046). Calcified or irregular/ulcerated plaques were correlated with a higher incidence of MACE, but both were not independently associated with MACE (HR, 1.35; 95% CI, 0.69-2.64, p=0.38 and HR, 0.98; 95% CI, 0.57-1.69; p=0.95, respectively). CONCLUSION: The presence of a heterogeneous carotid plaque in patients who underwent PCI predicted future CV events. These patients may require more aggressive medical therapy and careful follow-up.

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  • Roadmap on ferroelectric hafnia- and zirconia-based materials and devices

    José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder

    APL Materials   11 ( 8 )   2023.8

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    Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors of these materials requires a combined effort by the scientific community to address technical limitations, which still hinder their application. Besides their favorable intrinsic material properties, HfO2–ZrO2 materials face challenges regarding their endurance, retention, wake-up effect, and high switching voltages. In this Roadmap, we intend to combine the expertise of chemistry, physics, material, and device engineers from leading experts in the ferroelectrics research community to set the direction of travel for these binary ferroelectric oxides. Here, we present a comprehensive overview of the current state of the art and offer readers an informed perspective of where this field is heading, what challenges need to be addressed, and possible applications and prospects for further development.

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  • Enhanced polarization properties of one-axis-oriented PZT thin films on transparent glass substrates by controlling chemical composition

    Yusuke Yamasaki, Yukie Yokota, Hiromi Shima, Hiroshi Funakubo, Hiroshi Uchida

    Journal of the Ceramic Society of Japan   131 ( 7 )   229 - 235   2023.7

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  • No‐Heating Deposition of Ferroelectric x%YO1.5–(100−x%)(Hf1−yZry)O2 Films

    Takanori Mimura, Reijiro Shimura, Akinori Tateyama, Yoshiko Nakamura, Takahisa Shiraishi, Hiroshi Funakubo

    physica status solidi (a)   2023.7

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    DOI: 10.1002/pssa.202300100

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  • Enhanced Thermoelectric Properties of SrSi2 Composite Films with Cubic and Layered Polymorphs

    Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Takayoshi Katase, Yoshisato Kimura, Hiroshi Funakubo

    ACS Applied Energy Materials   2023.6

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    DOI: 10.1021/acsaem.3c00577

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  • Systematic Investigation of Ferroelectric Properties in x%YO1.5–(100–x%)Hf1–yZryO2 Films

    Takanori Mimura, Yuki Tashiro, Takao Shimizu, Hiroshi Funakubo

    ACS Applied Electronic Materials   2023.3

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    DOI: 10.1021/acsaelm.2c01658

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  • Simultaneous high-frequency measurement of direct and inverse transverse piezoelectric coefficients of thin films using longitudinal vibration

    Akinori Tateyama, Yuichiro Orino, Yoshiharu Ito, Takahisa Shiraishi, Takao Shimizu, Minoru Kuribayashi Kurosawa, Hiroshi Funakubo

    Sensors and Actuators A: Physical   114265 - 114265   2023.2

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    DOI: 10.1016/j.sna.2023.114265

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  • Effect of film thickness on output power of a piezoelectric vibration energy harvester using hydrothermally synthesized (K,Na)NbO3 film

    Akinori Tateyama, Yoshiharu Ito, Takahisa Shiraishi, Minoru Kurosawa, Hiroshi Funakubo

    Japanese Journal of Applied Physics   2023.1

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    Abstract

    The dependence of the output power of piezoelectric vibration energy harvesters on film thickness was systematically investigated using {100}c-oriented epitaxial (K,Na)NbO3 films prepared on single-crystal SrTiO3 substrates by the hydrothermal deposition technique. First, we measured the vibration energy harvesting properties by a unimorph Pt/(K,Na)NbO3//SrRuO3//SrTiO3 cantilever. Based on the fact that the elastic stiffness of (K,Na)NbO3 is lower than that of SrTiO3 substrate, it can be understood that increasing film thickness leads to decreasing Qm, resulting in the decrease in output power as film thickness increased under the same input acceleration condition. In the next step, these cantilevers were attached to an Al plate having a much larger volume than the Pt/(K,Na)NbO3//SrRuO3//SrTiO3 cantilever. The output power of this type of harvester was more than 400% greater when the film thickness was increased from 3.5 μm to 22.3 μm due to the almost constant Qm value.

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  • Comparative study of fractional flow reserve and diastolic pressure ratio using a guidewire with a sensor for measuring intravascular pressure. International journal

    Hiroki Kojima, Hideki Ishii, Akihito Tanaka, Hiroshi Funakubo, Toshiaki Kato, Yusaku Shimbo, Toshiki Kawamiya, Yachiyo Kuwatsuka, Masahiko Ando, Toyoaki Murohara

    Medicine   101 ( 52 )   e32578   2022.12

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    PURPOSE: This study aimed to evaluate the correlation and diagnostic agreement between diastolic pressure ratio (dPR) and fractional flow reserve (FFR) in a Japanese real-world setting. DESIGN: Prospective multicenter observational study. METHODS: This study included 100 patients with intermediate coronary artery stenosis at 4 Japanese hospitals. For these lesions, FFR and dPR were measured using a guidewire with a sensor and a monitor to measure intravascular pressure. The correlation and diagnostic agreement between FFR and dPR were assessed. When both FFR and dPR were negative or positive, the results were considered to be concordant. When one was positive and the other was negative, the result was regarded as discordant (positive discordance, FFR > 0.80 and dPR ≤ 0.89; negative discordance, FFR ≤ 0.80 and dPR > 0.89). RESULTS: Overall, the FFR and dPR were well-correlated (R = 0.841). FFR and dPR were concordant in 89% of cases (concordant normal, 43%; concordant abnormal, 46%) and discordant in 11% (positive discordance, 7%; negative discordance, 4%). No significant difference was observed in the rate of concordant results between patients with and without diabetes mellitus. The diagnostic concordance rate was significantly different among the 3 coronary arteries (right coronary artery, 93.3%; left anterior descending artery, 93.2%; and left circumflex artery, 58.3%; P = .001). Additionally, the rate of concordant results tended to be higher when using intravenous administration of adenosine than when using intracoronary bolus injection of nicorandil (adenosine, 95.1%; nicorandil, 84.7%; P = .103). CONCLUSION: We found that dPR was highly correlated with FFR, and diagnostic discordance was observed in 11% of the lesions. Several factors, including lesion location and medication for hyperemia, may cause the diagnostic discordance between dPR and FFR.

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  • Film thickness dependence of in-plane ferroelastic domain structure in constrained tetragonal PbTiO3 films induced by isotropic tensile strain

    Yoshitaka Ehara, Takaaki Nakashima, Daichi Ichinose, Shimizu Takao, Takahisa Shiraishi, OSAMI SAKATA, Tomoaki Yamada, Shintaro Yasui, ken nishida, HIROSHI FUNAKUBO

    Appl. Phys. Lett.   121 ( 26 )   262901 - 262901   2022.12

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    In this study, the ferroelectric phase of PbTiO3 (PTO) thin films was grown on cubic single-crystal KTaO3 (KTO) substrates using metal–organic chemical vapor deposition. X-ray diffraction (XRD) was used to reveal an a1 /a2 domain structure, which remained unchanged down to a film thickness of 2 nm. The a1 and a2 polydomains do not have a simple tetragonal symmetry because aa∥ and aa do not have the same values. The crystallographic tilt angle, α, is defined based on the rotation angle of the PTO lattice with respect to the cubic phase of KTO substrates. The in-plane tetragonal distortion ( ca∥/ aa∥) and α decreased with the decrease in the film thickness, following the in-plane tetragonal geometric equation: [Formula: see text]. The isotropic tensile strains induced in-plane polarization directions along the [100] and [010] axes of the substrates. These axes are formed via the a1/ a2 polydomain of the tetragonal-like phase. Moreover, synchrotron in-plane grazing incidence XRD and piezoelectric force microscopy were used to reveal the thickness dependency of the periodic domain width of the ferroelastic a1/ a2 domain. The periodic domain width in the PTO films decreased, following Kittel's law, with the reduction in the film thickness.

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  • On the switching dynamics of epitaxial ferroelectric CeO2-HfO2 thin film capacitors. International journal

    Felix Cüppers, Koji Hirai, Hiroshi Funakubo

    Nano convergence   9 ( 1 )   56 - 56   2022.12

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    Epitaxial layers of ferroelectric orthorhombic HfO2 are frequently investigated as model systems for industrially more relevant polycrystalline films. The recent success in stabilizing the orthorhombic phase in the solid-solution cerium oxide - hafnium oxide system allows detailed investigations of external influences during fabrication. This report analyzes the ferroelectric properties of two thin film capacitors, which were post-deposition annealed in N2 and O2 atmospheres to achieve the orthorhombic phase after room temperature deposition. The samples, which exhibit very similar constituent phase, appear identical in conventional polarization-field hysteresis measurements. However, a significant switching speed difference is observed in pristine devices. Continued field cycling reduces the difference. Deeper analysis of switching transients based on the Nucleation Limited Switching model suggests that the O2 heat treatment atmosphere results in an altered oxygen vacancy profile, which is reverted during ferroelectric cycling.

    DOI: 10.1186/s40580-022-00344-4

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  • Tunable Ferroelectric Properties in Wurtzite (Al0.8Sc0.2)N via Crystal Anisotropy

    Shinnosuke Yasuoka, Ryoichi Mizutani, Reika Ota, Takahisa Shiraishi, Takao Shimizu, Masato Uehara, Hiroshi Yamada, Morito Akiyama, Hiroshi Funakubo

    ACS Applied Electronic Materials   2022.11

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    Publishing type:Research paper (scientific journal)   Publisher:American Chemical Society (ACS)  

    DOI: 10.1021/acsaelm.2c00999

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  • Composition dependence of ferroelectric properties in (111)-oriented epitaxial HfO2-CeO2 solid solution films

    Koji Hirai, Takahisa Shiraishi, Wakiko Yamaoka, Risako Tsurumaru, Yukari Inoue, Hiroshi Funakubo

    Japanese Journal of Applied Physics   2022.11

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    Abstract

    The composition dependence of ferroelectric properties was investigated for (111)-oriented epitaxial HfO2-CeO2 solid solution films. Twenty-nanometer-thick films with different compositions were prepared on (111)ITO//(111)YSZ substrates at room temperature by pulsed laser deposition and subsequent heat treatment at 1000 oC under atmospheric N2 and O2 flows. All of the films had fluorite structures, and their crystal symmetries changed from monoclinic to tetragonal/cubic through orthorhombic phases as the (Hf1-xCex)O2 (x =0.12-0.25) increased in the film. The orthorhombic phase was confirmed for films with x = 0.15 and 0.17. On the other hand, ferroelectric properties were observed in films with x = 0.15-0.20, suggesting that a field-induced phase transition for films with x = 0.20. The film composition showing ferroelectricity was the widest for the reported epitaxial HfO2-based films. Their remanent polarization (Pr) and coercive field (Ec) were almost the same, at 17-19 μC/cm2 and 2.0-3.0 MV/cm, respectively. This wide ferroelectric composition range with relatively similar ferroelectricity is due to the solid solution of the same fluorite structure of HfO2 and CeO2 with monoclinic and cubic symmetries, that is respectively lower and higher crystal symmetries of the ferroelectric orthorhombic phase.

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  • Nanoscale mapping to assess the asymmetry of local C–V curves obtained from ferroelectric materials

    Yoshiomi Hiranaga, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho

    Japanese Journal of Applied Physics   61 ( SN )   SN1014 - SN1014   2022.11

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    Abstract

    The asymmetry in the capacitance–voltage (C–V) curves obtained from a ferroelectric material can provide information concerning the internal microstructure of a specimen. The present study visualized nanoscale switching of a HfO2-based ferroelectric thin film in real space based on assessing asymmetry using a local C–V mapping method. Several parameters were extracted from the local C–V curves at each point. The parameter Vi, indicating the lateral shift of the local C–V curve, was employed as an indicator of local imprint. In addition, the differences in the areas between the C–V curves for the forward and reverse sweeps, Sf − Sr, provided another slightly different indicator of nanoscale switching asymmetry. These parameters obtained from asymmetric C–V curves are thought to be related to internal electric fields and local stress caused by defects in the film. The work reported here also involved a cluster analysis of the extracted parameters using the k-means method.

    DOI: 10.35848/1347-4065/ac7f7a

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  • Effect of film thickness on piezoelectric vibrator using hydrothermally synthesized epitaxial (K0.88Na0.12)NbO3 film

    Akinori Tateyama, Yoshiharu Ito, Takahisa Shiraishi, Minoru Kurosawa, Mutsuo Ishikawa, Hiroshi Funakubo

    Japanese Journal of Applied Physics   61 ( SN )   SN1016 - SN1016   2022.11

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    Two types of vibrators using hydrothermally synthesized ferroelectric (K, Na)NbO3 films were fabricated on SrTiO3 substrates. Cantilever piezoelectric vibrators with film thicknesses of 3.5–22.3 μm were used under low-frequency and no resonance drive. The obtained output displacement increased almost linearly as the film thickness increased under both unipolar and bipolar drives. The obtained transverse piezoelectric coefficient, e31,f, was almost independent of film thickness, ≈−5 C m−2. On the other hand, a longitudinal piezoelectric vibrator was used under the resonance of half-length longitudinal vibration. The electromechanical coupling factor, keff2, and the mechanical quality factor, Qm, were evaluated. keff2 and Qm respectively increased from 0.14% to 1.23% and decreased from 556 to 224 as the film thickness increased from 2.5 to 26 μm. By applying a large voltage of 50 V0-p, a large vibration velocity of 1.5 m s−1 was obtained for the vibrator with a film thickness of 26 μm.

    DOI: 10.35848/1347-4065/ac8046

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  • Quantification of the Electromechanical Measurements by Piezoresponse Force Microscopy. International journal

    Pratyush Buragohain, Haidong Lu, Claudia Richter, Tony Schenk, Pamenas Kariuki, Sebastjan Glinsek, Hiroshi Funakubo, Jorge Íñiguez, Emmanuel Defay, Uwe Schroeder, Alexei Gruverman

    Advanced materials (Deerfield Beach, Fla.)   34 ( 47 )   e2206237   2022.11

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    Piezoresponse force microscopy (PFM) is widely used for characterization and exploration of the nanoscale properties of ferroelectrics. However, quantification of the PFM signal is challenging due to the convolution of various extrinsic and intrinsic contributions. Although quantification of the PFM amplitude signal has received considerable attention, quantification of the PFM phase signal has not been addressed. A properly calibrated PFM phase signal can provide valuable information on the sign of the local piezoelectric coefficient-an important and nontrivial issue for emerging ferroelectrics. In this work, two complementary methodologies to calibrate the PFM phase signal are discussed. The first approach is based on using a standard reference sample with well-known independently measured piezoelectric coefficients, while the second approach exploits the electrostatic sample-cantilever interactions to determine the parasitic phase offset. Application of these methodologies to studies of the piezoelectric behavior in ferroelectric HfO2 -based thin-film capacitors reveals intriguing variations in the sign of the longitudinal piezoelectric coefficient, d33,eff . It is shown that the piezoelectric properties of the HfO2 -based capacitors are inherently sensitive to their thickness, electrodes, as well as deposition methods, and can exhibit wide variations including a d33,eff sign change within a single device.

    DOI: 10.1002/adma.202206237

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  • Preferential growth of (001)-oriented Bi2SiO5 thin films deposited on (101)-oriented rutile substrates and their ferroelectric and dielectric properties. International journal

    Masanori Kodera, Keisuke Ishihama, Takao Shimizu, Hiroshi Funakubo

    Scientific reports   12 ( 1 )   15204 - 15204   2022.9

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    Ferroelectric thin films are important because of their great potential for use in various electric devices such as ferroelectric random-access memory. It was expected that Bi2SiO5, a Si-containing ferroelectric material, would show improved ferroelectricity by targeting a film with the (001)-orientation (polar-axis) on the substrate. Although there was a narrow process window for the deposition of the (010)/(001)-oriented Bi2SiO5 thin film, it was successfully prepared on a (101)-oriented TiO2 single substrate using the pulsed layer deposition technique. The optimum film deposition conditions and film thickness were found, and in this material, the volume fraction of the (001)-oriented domain reached about 70%. By controlling film orientation to the polar axis, the remanent polarization value of this film was 4.8 μC cm-2, which is the highest value among reported Bi2SiO5.

    DOI: 10.1038/s41598-022-19058-y

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  • In-situ observation of reversible 90°-domain switching in Pb(Zr, Ti)O3 films for microcantilever structure

    Yoshitaka Ehara, Hitoshi Morioka, Takeshi Kobayashi, Shintaro Yasui, ken nishida, HIROSHI FUNAKUBO

    Japanese Journal of Applied Physics   61   2022.8

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    DOI: 10.35848/1347-4065/ac819a

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  • Suppression of Pressure-Induced Phase Transitions in a Monoclinically Distorted LiNbO3-Type CuNbO3 by Preference for a CuO3 Triangular Coordination Environment International journal

    Masayuki Fukuda, Hidenobu Murata, Takumi Nishikubo, Qiumin Liu, Koomok Lee, Takehiro Koike, Yuma Takahashi, Saori I. Kawaguchi, Naohisa Hirao, Hiroshi Funakubo, Masaki Azuma

    Inorganic Chemistry   61 ( 32 )   12719 - 12725   2022.8

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    Pressure-induced phase transitions in a monoclinically distorted LiNbO3-type CuNbO3 with triangularly coordinated Cu and octahedrally coordinated Nb were experimentally and computationally investigated. Phase transitions into GdFeO3-type or NaIO3-type structures generally observed in LiNbO3-type compounds below 30 GPa were not detected in CuNbO3 even at the maximum experimental pressure, 32.4 GPa. Our density functional theory calculations revealed that the phase transition is suppressed by the preference for the CuO3 triangular coordination environment, which reduces the total internal energy. This study clarifies that the change in the coordination environment of given ions can affect the pressure-induced phase transition.

    DOI: 10.1021/acs.inorgchem.2c01766

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  • Lower ferroelectric coercive field of ScGaN with equivalent remanent polarization as ScAlN

    Masato Uehara, Ryouichi Mizutani, Shinnosuke Yasuoka, Takao Shimizu, Hiroshi Yamada, Morito Akiyama, Hiroshi Funakubo

    Applied Physics Express   2022.8

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    DOI: 10.35848/1882-0786/ac8048

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  • Crystal structure and piezoelectric properties of hydrothermally deposited (K,Na,Li)NbO&lt;sub&gt;3&lt;/sub&gt; epitaxial thick films

    Takahisa Shiraishi, Akinori Tateyama, Hiroshi Uchida, Hiroshi Funakubo

    Journal of the Ceramic Society of Japan   130 ( 8 )   621 - 626   2022.8

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    DOI: 10.2109/jcersj2.22029

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  • Machine Learning-Driven Automated Scanning Probe Microscopy for Ferroelectrics

    Yongtao Liu, Kyle P. Kelley, Rama K. Vasudevan, Hiroshi Funakubo, Shelby S. Fields, Takanori Mimura, Susan Trolier-McKinstry, Jon F. Ihlefeld, Maxim Ziatdinov, Sergei V. Kalinin

    Microscopy and Microanalysis   28 ( S1 )   2924 - 2926   2022.8

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Oxford University Press ({OUP})  

    DOI: 10.1017/s1431927622010972

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  • Process window for growth of polar-axis-oriented tetragonal (Bi, K)TiO3 epitaxial films on (100)cSrRuO3//(100)SrTiO3 substrates by the hydrothermal method

    Rurika Kubota, Akinori Tateyama, Yoshiharu Ito, Hu Yuxian, Takahisa Shiraishi, Minoru Kurosawa, Hiroshi Funakubo

    Journal of Materials Science   2022.8

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    Publishing type:Research paper (scientific journal)   Publisher:Springer Science and Business Media LLC  

    DOI: 10.1007/s10853-022-07484-2

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  • Learning the right channel in multimodal imaging: automated experiment in Piezoresponse Force Microscopy

    Yongtao Liu, Rama K. Vasudevan, Kyle P. Kelley, Hiroshi Funakubo, Maxim Ziatdinov, Sergei V. Kalinin

    2022.7

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    We report the development and experimental implementation of the automated
    experiment workflows for the identification of the best predictive channel for
    a phenomenon of interest in spectroscopic measurements. The approach is based
    on the combination of ensembled deep kernel learning for probabilistic
    predictions and a basic reinforcement learning policy for channel selection. It
    allows the identification of which of the available observational channels,
    sampled sequentially, are most predictive of selected behaviors, and hence have
    the strongest correlations. We implement this approach for multimodal imaging
    in Piezoresponse Force Microscopy (PFM), with the behaviors of interest
    manifesting in piezoresponse spectroscopy. We illustrate the best predictive
    channel for polarization-voltage hysteresis loop and frequency-voltage
    hysteresis loop areas is amplitude in the model samples. The same workflow and
    code are universal and applicable for any multimodal imaging and local
    characterization methods.

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  • Evaluation of bulk and surface acoustic waves propagation properties of (K,Na)NbO3 films deposited by hydrothermal synthesis or RF magnetron sputtering methods

    Kazuma Yoshizawa, Masashi Suzuki, Shoji Kakio, Yoshiharu Ito, Akinori Tateyama, Takahisa Shiraishi, Hiroshi Funakubo, Tsuyoshi Wakabayashi, Kenji Shibata

    Japanese Journal of Applied Physics   61 ( SG )   SG1077 - SG1077   2022.7

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    In this study, the bulk and surface acoustic waves (BAW and SAW) propagation properties of (K,Na)NbO3 (KNN) films deposited by hydrothermal synthesis or RF magnetron sputtering methods were evaluated to investigate the applicability of such films to high-frequency devices. For the {100}c-oriented KNN epitaxial films deposited by the hydrothermal synthesis method, a BAW phase velocity of 6900 m s−1 and an electromechanical coupling coefficient kt2 of 8.4% were obtained. From the measured Rayleigh-type SAW properties, a large electromechanical coupling coefficient K2 of 4.0% in the 1st mode was obtained in the {110}c-oriented KNN epitaxial films. On the other hand, for the preferentially {100}c-oriented KNN film deposited on Pt(111) by RF magnetron sputtering, a BAW phase velocity of 7850 m s−1 and kt2 of 7.4% were obtained. For the 0th mode of the Rayleigh-type SAW, a propagation loss of 0.13 dB/λ (λ: wavelength) at 440 MHz and a temperature coefficient of frequency of –42 ppm °C−1 were obtained for the {100}c-oriented KNN epitaxial film deposited on STO(100) by the RF magnetron sputtering method.

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  • Deposition and evaluation of Ta2O5 piezoelectric thin film on Pt crystal film

    Keisuke Matsuura, Masashi Suzuki, Shoji Kakio, Masanori Kodera, Hiroshi Funakubo

    Japanese Journal of Applied Physics   42   n/a   2022.7

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Institute for Ultrasonic Elecronics  

    DOI: 10.35848/1347-4065/ac5722

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  • Preparation of orthorhombic Y-doped TaON film

    Takanori Mimura, Takao Shimizu, Hiroshi Funakubo

    Journal of the Ceramic Society of Japan   130 ( 7 )   432 - 435   2022.7

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    DOI: 10.2109/jcersj2.22002

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  • Enhancement of crystal anisotropy and ferroelectricity by decreasing thickness in (Al,Sc)N films

    Shinnosuke Yasuoka, Ryoichi Mizutani, Reika Ota, Takahisa Shiraishi, Takao Shimizu, Shintaro Yasui, Yoshitaka Ehara, Ken Nishida, Masato Uehara, Hiroshi Yamada, Morito Akiyama, Yasuhiko Imai, Osami Sakata, Hiroshi Funakubo

    Journal of the Ceramic Society of Japan   130 ( 7 )   436 - 441   2022.7

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    DOI: 10.2109/jcersj2.21184

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  • Automated Experiments of Local Non-linear Behavior in Ferroelectric Materials International journal

    Yongtao Liu, Kyle P. Kelley, Rama K. Vasudevan, Wanlin Zhu, John Hayden, Jon-Paul Maria, Hiroshi Funakubo, Maxim A. Ziatdinov, Susan Trolier-McKinstry, Sergei V. Kalinin

    Small (Weinheim an der Bergstrasse, Germany)   18 ( 48 )   e2204130   2022.6

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    We develop and implement an automated experiment in multimodal imaging to
    probe structural, chemical, and functional behaviors in complex materials and
    elucidate the dominant physical mechanisms that control device function. Here
    the emergence of non-linear electromechanical responses in piezoresponse force
    microscopy (PFM) is explored. Non-linear responses in PFM can originate from
    multiple mechanisms, including intrinsic material responses often controlled by
    domain structure, surface topography that affects the mechanical phenomena at
    the tip-surface junction, and, potentially, the presence of surface
    contaminants. Using an automated experiment to probe the origins of non-linear
    behavior in model ferroelectric lead titanate (PTO) and ferroelectric
    Al0.93B0.07N films, it was found that PTO showed asymmetric nonlinear behavior
    across a/c domain walls and a broadened high nonlinear response region around
    c/c domain walls. In contrast, for Al0.93B0.07N, well-poled regions showed high
    linear piezoelectric responses paired with low non-linear responses and regions
    that were multidomain indicated low linear responses and high nonlinear
    responses. We show that formulating dissimilar exploration strategies in deep
    kernel learning as alternative hypotheses allows for establishing the
    preponderant physical mechanisms behind the non-linear behaviors, suggesting
    that this approach automated experiments can potentially discern between
    competing physical mechanisms. This technique can also be extended to electron,
    probe, and chemical imaging.

    DOI: 10.1002/smll.202204130

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  • Exploring Physics of Ferroelectric Domain Walls in Real Time: Deep Learning Enabled Scanning Probe Microscopy International journal

    Yongtao Liu, Kyle P. Kelley, Hiroshi Funakubo, Sergei V. Kalinin, Maxim Ziatdinov

    Advanced science (Weinheim, Baden-Wurttemberg, Germany)   9 ( 31 )   e2203957   2022.6

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    The functionality of ferroelastic domain walls in ferroelectric materials is
    explored in real-time via the in-situ implementation of computer vision
    algorithms in scanning probe microscopy (SPM) experiment. The robust deep
    convolutional neural network (DCNN) is implemented based on a deep residual
    learning framework (Res) and holistically-nested edge detection (Hed), and
    ensembled to minimize the out-of-distribution drift effects. The DCNN is
    implemented for real-time operations on SPM, converting the data stream into
    the semantically segmented image of domain walls and the corresponding
    uncertainty. We further demonstrate the pre-selected experimental workflows on
    thus discovered domain walls, and report alternating high- and low-
    polarization dynamic (out-of-plane) ferroelastic domain walls in a (PbTiO3) PTO
    thin film and high polarization dynamic (out-of-plane) at short ferroelastic
    walls (compared with long ferroelastic walls) in a lead zirconate titanate
    (PZT) thin film. This work establishes the framework for real-time DCNN
    analysis of data streams in scanning probe and other microscopies and
    highlights the role of out-of-distribution effects and strategies to ameliorate
    them in real time analytics.

    DOI: 10.1002/advs.202203957

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    Other Link: http://arxiv.org/pdf/2206.11457v1

  • Ferroelectric and piezoelectric properties of 100 nm-thick CeO2-HfO2 epitaxial films

    Takahisa Shiraishi, Toyohiko J. Konno, Hiroshi Funakubo

    Applied Physics Letters   120 ( 13 )   132901 - 132901   2022.3

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    Scaling up the film thickness of HfO2-based ferroelectrics is an important factor leading to their potential application in piezoelectric devices. In this paper, we report the ferroelectric and piezoelectric properties of 100 nm-thick 0.1CeO2-0.9HfO2 films, epitaxially grown on (001) indium-tin-oxide//(001)yttria-stabilized zirconia substrates. The crystal structure was investigated using x-ray diffraction and scanning transmission electron microscopy (STEM). These analyses revealed that the polar orthorhombic phase was stabilized, even at a thickness of 100 nm, whereas the formation of a nonpolar monoclinic phase was suppressed. In addition, the elemental mappings obtained by STEM–energy dispersive x-ray spectroscopy revealed that the film was compositionally uniform across its thickness. The chemical state of Ce in the polar orthorhombic domain was investigated using STEM–electron energy loss spectroscopy, which revealed the coexistence of Ce4+ and Ce3+. In addition, pinched polarization-electric field loops were observed, and their shapes were found to remain unaltered even after 109 electric field cycles. The strain-electric field curves originating from ferroelectricity were observed before and after the electric field cycling, and the high-field observed strain, Smax/ Emax, was found to be approximately 7.2 pm/V. These results demonstrate that thicker CeO2-HfO2 ferroelectric films are promising candidates for use as piezoelectric materials.

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  • Film thickness dependence of ferroelectric properties in polar-axis oriented epitaxial (Bi,K)TiO3 films prepared by Hydrothermal method

    Rurika Kubota, Akinori Tateyama, Takahisa Shiraishi, Yoshiharu Ito, Minoru Kurosawa, Hiroshi Funakubo

    AIP Adv.   Vol. 12 ( 3 )   035241 - 035241   2022.3

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    Tetragonal (00l)-oriented epitaxial (Bi,K)TiO3 films were grown at 240 °C on (100) cSrRuO3//(100)SrTiO3 substrates by the hydrothermal method. KOH aqueous solutions and Bi(NO3)3 · 5H2O and TiO2 powders were used as the starting materials. Film thickness was controlled from 33 to 1200 nm by changing the deposition time, and the Bi/(Bi+K) ratio in the A-site of perovskite ABO3 was almost constant for all film thicknesses. Polar-axis (00l)-oriented epitaxial (Bi,K)TiO3 films were obtained without a secondary phase and/or other orientation for all thickness ranges. Large ferroelectricity with the remanent polarization ( Pr) of about 84 µC/cm2, comparable to previously reported lead-based ferroelectric films, was observed for (Bi,K)TiO3 films down to 33 nm in thickness. On the other hand, Ec increased with decreasing film thickness, but did not show strong film thickness dependence like other perovskite ferroelectric films. These data are very useful for understanding the degradation mechanism of ferroelectric thin films.

    DOI: 10.1063/5.0084170

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  • Domain structures induced by tensile thermal strain in epitaxial PbTiO3 films on silicon substrates

    Tomoya Sato, Masanori Kodera, Daichi Ichinose, Takanori Mimura, Takao Shimizu, Tomoaki Yamada, Hiroshi Funakubo

    Journal of Applied Physics   Vol. 131   2022.1

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    DOI: 10.1063/5.0074884

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  • No-Heating Deposition of 1-μm-Thick Y-Doped HfO2 Ferroelectric Films with Good Ferroelectric and Piezoelectric Properties by Radio Frequency Magnetron Sputtering Method

    Reijiro Shimura, Takanori Mimura, Akinori Tateyama, Takahisa Shiraishi, Takao Shimizu, Tomoaki Yamada, Yoshitomo Tanaka, Yukari Inoue, Hiroshi Funakubo

    Phys. Status Solidi RRL   Early View   2100574 - 2100574   2022.1

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    DOI: 10.1002/pssr.202100574

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    Other Link: https://onlinelibrary.wiley.com/doi/full-xml/10.1002/pssr.202100574

  • Polar-axis oriented epitaxial tetragonal (Bi,K)TiO3 films deposited below Curie temperature by hydrothermal method

    Yoshiharu Ito, Akinori Tateyama, Rurika Kubota, Takahisa Shiraish, Takao Shimizu, Osami Sakata, Jaemyung Kim, Minoru Kurosawa, Hiroshi Funakubo

    Appl. Phys. Lett.   Vol. 120 ( 2 )   022903 - 022903   2022.1

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    DOI: 10.1063/5.0075014

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  • Lower-Temperature Processing of Potassium Niobate Films by Microwave-Assisted Hydrothermal Deposition Technique

    Masaki Okura, Yoshiharu Ito, Takahisa Shiraishi, Takanori Kiguchi, Toyohiko J. Konno, Hiroshi Funakubo, Hiroshi Uchida

    J. Ceram. Soc. Jpn.   Vol. 130 ( No. 1 )   123 - 130   2022.1

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    DOI: 10.2109/jcersj2.21115

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  • The Influence of Eicosapentaenoic Acid to Arachidonic Acid Ratio on Long-term Cardiovascular Events Following Percutaneous Coronary Intervention.

    Kiyoshi Niwa, Akihito Tanaka, Hiroshi Funakubo, Satoshi Otsuka, Naoki Yoshioka, Nobutaka Kudo, Akihiro Tobe, Keisuke Sakakibara, Yusuke Miki, Takashi Kataoka, Kenji Furusawa, Hideki Ishii, Toyoaki Murohara

    Internal medicine (Tokyo, Japan)   60 ( 24 )   3865 - 3871   2021.12

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    Objective The relationship between cardiovascular disease and the serum polyunsaturated fatty acid parameters has been reported. The aim of the present study was to investigate the association between the eicosapentaenoic acid and arachidonic acid (EPA/AA) ratio and long-term cardiovascular events in patients with coronary artery disease. Methods We identified a total of 831 patients who underwent percutaneous coronary intervention and whose EPA/AA ratio was available. The patients were divided into two groups according to their serum EPA/AA ratio (median, 0.29; interquartile range 0.19-0.47): those in the lower quartile of EPA/AA ratios (Low EPA/AA group; n=231) and all other subjects (High EPA/AA group; n=600). The primary endpoints included a composite of cardiovascular death, myocardial infarction, and ischemic stroke. Results Patients in the Low EPA/AA group were significantly younger (66.0±12.6 years vs. 69.9±9.3 years, p<0.001), current smokers (33.3% vs. 22.7%, p=0.002), and had a history of myocardial infarction (20.3% vs. 12.3%, p=0.003). During the follow-up (median, 1,206 days; interquartile range, 654-1,910 days), the occurrence of the primary endpoint was significantly higher in the Low EPA/AA group than in the High EPA/AA group. Of note, the rate of cardiovascular death was significantly higher in the Low EPA/AA group, and the rates of myocardial infarction and stroke tended to be higher. Conclusion A low EPA/AA ratio was associated with long-term adverse cardiovascular events in Japanese patients with coronary artery disease.

    DOI: 10.2169/internalmedicine.7336-21

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  • Thickness dependence of phase stability in epitaxial (HfxZr1-x)O2 films

    Takanori Mimura, Takao Shimizu, Yoshio Katsuya, Osami Sakata, Hiroshi Funakubo

    Physical review materials   Vol. 5 ( 11 )   2021.11

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    DOI: 10.1103/PhysRevMaterials.5.114407

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  • Thermal stability of self-polarization in a (K,Na)NbO3 film prepared by the hydrothermal method

    Akinori Tateyama, Yoshiharu Ito, Takahisa Shiraishi, Yuichiro Orino, Minoru Kurosawa, Hiroshi Funakubo

    Japanese Journal of Applied Physics   Vol. 60 ( SF )   SFFB03 - SFFB03   2021.11

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    DOI: 10.35848/1347-4065/ac10f8

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  • Effect of film microstructure on the polarization switching behavior in ferroelectric Y:HfO2 thin films

    Pratyush Buragohain, Adam Erickson, Takanori Mimura, Hiroshi Funakubo, Alexei Gruverman

    Adv Functional Material   32 ( No. 2108876 )   2021.11

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    DOI: 10.1002/adfm.202108876

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  • Piezoelectric responses beyond Pb(Zr,TiO)3 in Pb-free perovskite thin films by ferroelastic domain switching: Free from Pb and MPB International journal

    Takao Shimizu, Miyu Hasegawa, Keisuke Ishihama, Akinori Tateyama, Wakiko Yamaoka, Risako Tsurumaru, Shintaro Yoshimura, Yusuke SATO, Hiroshi Funakubo

    ACS Appl. Mater. Interfaces 2021   Vol. 13 ( 48 )   57532 - 57539   2021.11

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    Strong electromechanical coupling is observed in tetragonal Pb-free 0.7(Bi0.5Na0.5)TiO3-0.3BaTiO3 films, which is far from the morphotropic phase boundary, prepared by pulsed laser deposition on a Si substrate. The tensile strain induced during cooling causes in-plane polarization in an oriented film on a Si substrate, while an epitaxial film grown on a SrTiO3 substrate exhibits out-of-plane polarization. S-E curve analysis reveals that the obtained piezoelectric coefficient for the film on the Si substrate (d33,f ≈ 275 pm/V) is approximately eight times higher than that for the epitaxial film on the SrTiO3 substrate (d33,f ≈ 34 pm/V). In situ X-ray diffraction analysis confirms the occurrence of domain switching under an electric field from in-plane to out-of-plane polarization. An effective piezoelectric stress coefficient, e31,eff, of ∼19 C/m2 is obtained from a Si cantilever sample, which is the highest among the reported values for Pb-free piezoelectric films and is comparable to those for Pb-based films. The significant piezoelectric response produced by domain switching in the Pb-free materials with the composition far from the morphotropic phase boundary will expand future applications due to their both outstanding properties and environmental sustainability.

    DOI: 10.1021/acsami.1c15713

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  • Demonstration of ferroelectricity in ScGaN thin film using sputtering method

    Masato Uehara, Ryoichi Mizutani, Shinnosuke Yasuoka, Takahisa Shiraishi, Takao Shimizu, Hiroshi Yamada, Morito Akiyama, Hiroshi Funakubo

    Applied Physics Letters   Vol. 119 ( 17 )   172901 - 172901   2021.10

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    DOI: 10.1063/5.0068059

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  • Composition dependencies of crystal structure and electrical properties of epitaxial tetragonal (Bi, Na)TiO3-BaTiO3 films grown on (100)cSrRuO3//(100)SrTiO3 substrates by pulsed laser depositions

    Keisuke Ishihama, Takao Shimizu, Wakiko Yamaoka, Risako Tsurumaru, Shintaro Yoshimura, Yusuke Sato, Hiroshi Funakubo

    J. Appl. Phys.   Vol. 130   2021.10

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    DOI: 10.1063/5.0063385

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  • Impact of deposition temperature on crystal structure and ferroelectric properties of (Al1-xScx)N films prepared by sputtering method

    Shinnosuke Yasuoka, Takao Shimizu, Masato Uehara, Hiroshi Yamada, Morito Akiyama, Hiroshi Funakubo

    Phys. Status Solidi A 2021   218 ( 17 )   2100302 - 2100302   2021.9

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    DOI: 10.1002/pssa.202170049

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    Other Link: https://onlinelibrary.wiley.com/doi/full-xml/10.1002/pssa.202100302

  • Evaluation of BAW and SAW Properties of (K, Na)NbO3 Thin Films Deposited by RF Sputtering

    Kazuma Yoshizawa, Masashi Suzuki, Shoji Kakio, Yoshiharu Ito, Akinori Tateyama, Hiroshi Funakubo, Tsuyoshi Wakabayashi, Kenji Shibata

    2021 IEEE International Ultrasonics Symposium (IUS)   2021.9

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    DOI: 10.1109/ius52206.2021.9593374

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  • Thickness scaling of (Al0.8Sc0.2)N films with remanent polarization beyond 100 μC/cm2 around 10 nm in thickness

    Ryoichi Mizutani, Shinnosuke Yasuoka, Takahisa Shiraishi, Takao Shimizu, Masato Uehara, Hiroshi Yamada, Morito Akiyama, Osami Sakata, Hiroshi Funakubo

    Appl. Phys. Exp.   Vol. 14 ( 10 )   105501 - 105501   2021.9

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    DOI: 10.35848/1882-0786/ac2261

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  • Experimental discovery of structure-property relationships in ferroelectric materials via active learning

    Yongtao Liu, Kyle P. Kelley, Rama K. Vasudevan, Hiroshi Funakubo, Maxim A. Ziatdinov, Sergei V. Kalinin

    2021.8

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    Emergent functionalities of structural and topological defects in
    ferroelectric materials underpin an extremely broad spectrum of applications
    ranging from domain wall electronics to high dielectric and electromechanical
    responses. Many of these have been discovered and quantified via local scanning
    probe microscopy methods. However, the search for these functionalities has
    until now been based by either trial and error or using auxiliary information
    such as topography or domain wall structure to identify potential objects of
    interest based on the intuition of operator or preexisting hypotheses, with
    subsequent manual exploration. Here, we report the development and
    implementation of a machine learning framework that actively discovers
    relationships between local domain structure and polarization switching
    characteristics in ferroelectric materials encoded in the hysteresis loop. The
    latter and descriptors such as nucleation bias, coercive bias, hysteresis loop
    area, or more complex functionals of hysteresis loop shape and corresponding
    uncertainties are used to guide the discovery via automated piezoresponse force
    microscopy (PFM) and spectroscopy experiments. As such, this approach combines
    the power of machine learning methods to learn the correlative relationships
    between high dimensional data, and human-based physics insights encoded in the
    acquisition function. For ferroelectric, this automated workflow demonstrates
    that the discovery path and sampling points of on-field and off-field
    hysteresis loops are largely different, indicating the on-field and off-field
    hysteresis loops are dominated by different mechanisms. The proposed approach
    is universal and can be applied to a broad range of modern imaging and
    spectroscopy methods ranging from other scanning probe microscopy modalities to
    electron microscopy and chemical imaging.

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    Other Link: http://arxiv.org/pdf/2108.06037v2

  • High-precision Local C-V Mapping for Ferroelectrics Using Principal Component Analysis

    Hiranaga Yoshiomi, Mimura Takanori, Shimizu Takao, Funakubo Hiroshi, Cho Yasuo

    Jpn. J. Appl. Phys.   Vol. 60 ( SF )   SFFB09 - SFFB09   2021.8

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    DOI: 10.35848/1347-4065/ac13d9

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  • Influence of orientation on electro-optic effect in epitaxial Y-doped HfO2 ferroelectric thin films

    Shinya Kondo, Reijiro Shimura, Takashi Teranishi, Akira Kishimoto, Takanori Nagasaki, Hiroshi Funakubo, Tomoaki Yamada

    Jpn. J. Appl. Phys.   Vol. 60   2021.8

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    DOI: 10.35848/1347-4065/ac17e0

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  • Influence of cooling rate on ferroelastic domain structure for epitaxial (100)/(001)-oriented Pb(Zr, Ti)O3 thin films under tensile strain

    Yoshitaka Ehara, Daichi Ichinose, Masanori Kodera, Takahisa Shiraishi, Takao Shimizu, Tomoaki Yamada, Ken Nishida, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   Vol. 60 ( SF )   SFFB07 - SFFB07   2021.7

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    DOI: 10.35848/1347-4065/ac10f7

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  • Growth of 0.1(Bi, Na)TiO3-0.9BaTiO3 epitaxial films by pulsed laser deposition and their electric properties

    Keisuke Ishihama, Masanori Kodera, Takao Shimizu, Wakiko Yamaoka, Risako Tsurumaru, Shintaro Yoshimura, Yusuke Sato, Hiroshi Funakubo

    J.Ceram. Soc. Jpn.   Vol. 129 ( No. 7 )   2021.7

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    DOI: 10.2109/jcersj2.21002

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  • Autonomous Experiments in Scanning Probe Microscopy and Spectroscopy: Choosing Where to Explore Polarization Dynamics in Ferroelectrics International journal

    Vasudevan Rama, Kelley Kyle, Hinkle Jacob, Funakubo Hiroshi, Jesse Stephe, Kalinin Sergei, Ziatdinov Maxim

    ACS Nano 2021   Vol. 15 ( 7 )   11253 - 11262   2021.7

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    Polarization dynamics in ferroelectric materials are explored via the
    automated experiment in Piezoresponse Force Spectroscopy. A Bayesian
    Optimization framework for imaging is developed and its performance for a
    variety of acquisition and pathfinding functions is explored using previously
    acquired data. The optimized algorithm is then deployed on an operational
    scanning probe microscope (SPM) for finding areas of large electromechanical
    response in a thin film of PbTiO3, with metrics showing gains of ~3x in the
    sampling efficiency. This approach opens the pathway to perform more complex
    spectroscopies in SPM that were previously not possible due to time constraints
    and sample stability, tip wear, and/or stochastic sample damage that occurs at
    specific, a priori unknown spatial positions. Potential improvements to the
    framework to enable the incorporation of more prior information and improve
    efficiency further are discussed.

    DOI: 10.1021/acsnano.0c10239

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    Other Link: http://arxiv.org/pdf/2011.13050v2

  • Linear electro-optic effect in CMOS-compatible ferroelectric HfO2-based epitaxial thin films

    Shinya Kondo, Reijiro Shimura, Takashi Teranishi, Akira Kishimoto, Takanori Nagasaki, Hiroshi Funakubo, Tomoaki Yamada

    Jpn. J. Appl. Phys. RAPID COMMUNICATION   Vol. 60 ( 7 )   070905 - 070905   2021.6

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    <title>Abstract</title>
    Electro-optic (EO) modulators for silicon photonics using CMOS-compatible materials and processes are in great demand. In this study, epitaxial (100)-undoped HfO2 and Y-doped HfO2 thin films were fabricated on Sn-doped In2O3/yttria-stabilized zirconia(100) substrates at room temperature via magnetron sputtering. EO measurement of the Y-HfO2 film using modulation ellipsometry showed that the phase was changed by 180° after application of positive and negative poling biases, and the modulation amplitude increased linearly with increasing AC electric field, indicating a linear EO effect based on ferroelectricity. The observed results indicate that ferroelectric HfO2-based films are viable candidates for CMOS-compatible EO devices.

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  • Comprehensive study on the kinetic formation of the orthorhombic ferroelectric phase in epitaxial Y-doped ferroelectric HfO2 thin films

    Yuki Tashiro, Takao Shimizu, Takanori Mimura, Hiroshi Funakubo

    ACS Applied Electronic Materials 2021   Vol. 3 ( No. 7 )   3123 - 3130   2021.6

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    DOI: 10.1021/acsaelm.1c00342

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  • Local C-V Characterization for Ferroelectric Films

    Yoshiomi Hiranaga, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho

    IEEE International Symposium on Applications of Feeroelectric, ISAF 2021, International Symposium on Integrated Functionalities, ISIF 2021 and Piezoresponse Force Microscopy Workshop, PFM 2021 - Proceedings   2021.5

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    DOI: 10.1109/ISAF51943.2021.9477316

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  • Electric‐Field‐Induced Ferroelectricity in 5%Y‐doped Hf0.5Zr0.5O2: Transformation from the Paraelectric Tetragonal Phase to the Ferroelectric Orthorhombic Phase

    Takao Shimizu, Yuki Tashiro, Takanori Mimura, Takanori Kiguchi, Takahisa Shiraishi, Toyohiko J. Konnno, Osami Sakata, Hiroshi Funakubo

    physica status solidi (RRL) – Rapid Research Letters   15 ( 5 )   2170023 - 2170023   2021.5

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    DOI: 10.1002/pssr.202170023

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  • Electric‐Field‐Induced Ferroelectricity in 5%Y‐doped Hf0.5Zr0.5O2: Transformation from the Paraelectric Tetragonal Phase to the Ferroelectric Orthorhombic Phase

    Takao Shimizu, Yuki Tashiro, Takanori Mimura, Takanori Kiguchi, Takahisa Shiraishi, Toyohiko J. Konnno, Osami Sakata, Hiroshi Funakubo

    physica status solidi (RRL) – Rapid Research Letters   vol. 15 ( no. 5 )   2000589 - 2000589   2021.5

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    DOI: 10.1002/pssr.202000589

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  • Large thermal hysteresis of ferroelectric transition in HfO2-based ferroelectric films

    Takanori Mimura, Takao Shimizu, Osami Sakata, Hiroshi Funakubo

    Applied Physics Letters   vol. 118 ( 11 )   2021.3

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    DOI: 10.1063/5.0040934

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  • Preparation of 1 μm thick Y-doped HfO2 ferroelectric films on (111)Pt/TiO x /SiO2/(001)Si substrates by a sputtering method and their ferroelectric and piezoelectric properties

    Reijiro Shimura, Takanori Mimura, Akinori Tateyama, Takao Shimizu, Tomoaki Yamada, Yoshitomo Tanaka, Yukari Inoue, Hiroshi Funakubo

    Japanese Journal of Applied Physics   60 ( 3 )   031009 - 031009   2021.3

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  • Relationship between epicardial adipose tissue volume and coronary artery spasm. International journal

    Takashi Kataoka, Ken Harada, Akihito Tanaka, Tomohiro Onishi, Shun Matsunaga, Hiroshi Funakubo, Kazuhiro Harada, Tomoyuki Nagao, Norihiro Shinoda, Nobuyuki Marui, Kiyoshi Niwa, Hiroshi Tashiro, Yusuke Hitora, Kenji Furusawa, Hideki Ishii, Tetsuya Amano, Toyoaki Murohara

    International journal of cardiology   324   8 - 12   2021.2

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    BACKGROUND: Epicardial adipose tissue (EAT) is considered to play a critical role in vascular endothelial function. Coronary artery spasm has been postulated to be a causal factor in vascular endothelial abnormalities and atherosclerosis. This study aimed to investigate the relationship between coronary artery spasm and EAT volume, total abdominal adipose tissue (AAT) area, and abdominal visceral adipose tissue (AVAT) area. METHOD: Among patients undergoing coronary computed tomography (CT) to evaluate coronary artery disease, we identified 110 patients who did not have significant coronary artery stenosis and underwent a coronary spasm provocation test with cardiac catheterization. They were divided into two groups according to the results of the spasm provocation test: spasm-positive and spasm-negative. EAT volume, total AAT area, and AVAT area were evaluated using CT images. RESULTS: Seventy-seven patients were included in the spasm-positive group and 33 patients in the spasm-negative group. There were no significant differences in baseline clinical characteristics between the two groups, except for the prevalence of current smoking (48% vs. 27%, p = 0.04). EAT volume was significantly higher in the spasm-positive group (108 ± 38 mL vs. 87 ± 34 mL, p = 0.007), while no significant difference was seen in total AAT area (280 ± 113 cm2 vs. 254 ± 128 cm2, p = 0.32) or AVAT area (112 ± 54 cm2 vs. 98 ± 55 cm2, p = 0.27). Multivariate logistic analysis indicated that EAT volume (per 10 cm3) (odds ratio, 1.198; 95% confidence interval, 1.035-1.388; p = 0.016) was a significant predictor of coronary artery spasm. CONCLUSION: Our results suggest that EAT has a strong association with coronary artery spasm, while AAT may not.

    DOI: 10.1016/j.ijcard.2020.09.074

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  • Domain structure transition in compressively strained (100)/(001) epitaxial tetragonal PZT film

    Daichi Ichinose, Takao Shimizu, Osami Sakata, Tomoaki Yamada, Yoshitaka Ehara, Hiroshi Funakubo

    Journal of Applied Physics   vol. 129 ( 2 )   2021.1

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    DOI: 10.1063/5.0031803

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  • Local C–V mapping for ferroelectrics using scanning nonlinear dielectric microscopy

    Yoshiomi Hiranaga, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho

    Journal of Applied Physics   vol. 128 ( 24 )   244105 - 244105   2020.12

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    DOI: 10.1063/5.0029630

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  • Author Correction: Tensor factorization for elucidating mechanisms of piezoresponse relaxation via dynamic Piezoresponse Force Spectroscopy (npj Computational Materials, (2020), 6, 1, (113), 10.1038/s41524-020-00384-6)

    Kyle P. Kelley, Linglong Li, Yao Ren, Yoshitaka Ehara, Hiroshi Funakubo, Suhas Somnath, Stephen Jesse, Ye Cao, Ramakrishnan Kannan, Rama K. Vasudevan, Sergei V. Kalinin

    npj Computational Materials   6 ( 1 )   2020.12

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    DOI: 10.1038/s41524-020-00405-4

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  • 2Pb4-4 Evaluation of ultrasonic spray coating using high intensity and high frequency ultrasonic transducer with hydrothermal piezoelectric films

    Ishikawa Mutsuo, Tsukamoto Ayaho, Saito Nao, Yasui Shintaro, Tabaru Marie, Funakubo Hiroshi, Kurosawa Minoru

    Proceedings of Symposium on Ultrasonic Electronics   41   n/a   2020.11

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    DOI: 10.24492/use.41.0_2pb4-4

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  • Crystal structure, ferroelectric and piezoelectric properties of epitaxial (1−x)(Bi0.5Na0.5)TiO3–x(Bi0.5K0.5)TiO3 films grown by hydrothermal method

    Yu Huang, Yoshiharu Ito, Akinori Tateyama, Minoru Kurosawa, Hiroshi Funakubo

    Japanese Journal of Applied Physics   vol. 59 ( SP )   2020.11

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  • Dependency of direct and inverse transverse piezoelectric properties on composition in self-polarized epitaxial (K x Na1−x )NbO3 films grown via a hydrothermal method

    Akinori Tateyama, Yoshiharu Ito, Takao Shimizu, Yuichiro Orino, Minoru Kurosawa, Takeshi Yoshimura, Hiroshi Funakubo

    Japanese Journal of Applied Physics   vol. 59 ( SP )   2020.11

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  • Composition Dependence of Crystal Structures and Electrical Properties of Ca-Mg-Si Films Prepared by Sputtering

    Atsuo Katagiri, Mutsuo Uehara, Mao Kurokawa, Kensuke Akiyama, Takao Shimizu, Masaaki Matsushima, Hiroshi Uchida, Yoshisato Kimura, Hiroshi Funakubo

    Journal of ELECTRONIC MATERIALS   vol. 49 ( no. 12 )   7509 - 7517   2020.10

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    DOI: 10.1007/s11664-020-08510-2

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  • Effects of deposition conditions on the ferroelectric properties of (Al1-xScx)N thin films

    Shinnosuke Yasuoka, Takao Shimizu, Masato Uehara, Hiroshi Yamada, Morito Akiyama, Yoshiomi Hiranaga, Yasuo Cho, Hiroshi Funakubo

    J. Appl. Phys.   vol. 128 ( 11 )   114103 - 114103   2020.9

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    DOI: 10.1063/5.0015281

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  • Modeling and Design of a New Piezoelectronic Transistor for Ultralow-Voltage High-Speed Integrated Circuits

    Yusaku Shiotsu, Shuu'Ichirou Yamamoto, Yusuke Shuto, Hiroshi Funakubo, Minoru Kuribayashi Kurosawa, Satoshi Sugahara

    IEEE Transactions on Electron Devices   67 ( 9 )   3852 - 3860   2020.9

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    DOI: 10.1109/TED.2020.3008891

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  • Epitaxial Crystal Growth of Bismuth Silicate Driven by Fluorite-Like Layers

    Masanori Kodera, Takao Shimizu, Hiroshi Funakubo

    Cryst. Growth Des.   vol. 20 ( 11 )   7163 - 7169   2020.9

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    DOI: 10.1021/acs.cgd.0c00754

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  • Good piezoelectricity of self-polarized thick epitaxial (K,Na)NbO3 films grown below the Curie temperature (240°C) using a hydrothermal method

    Akinori Tateyama, Yoshiharu Ito, Yoshiko Nakamura, Takao Shimizu, Yuichiro Orino, Minoru Kurosawa, Hiroshi Uchida, Takahisa Shiraishi, Takanori Kiguchi, Toyohiko J. Konno, Takeshi Yoshimura, Hiroshi Funakubo

    Appl. Phys. Lett.   vol. 117 ( 14 )   142903 - 142903   2020.9

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    DOI: 10.1063/5.0017990

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  • Tensor factorization for elucidating mechanisms of piezoresponse relaxation via dynamic piezoresponse force spectroscopy Reviewed

    Kyle Kelley, Linglong Li, Yao Ren, Yoshitaka Ehara, Hiroshi Funakubo, Suhas Somnath, Stephen Jesse, Ye Cao, Ramakrishnan Kannan, Rama Vasudevan, Sergei Kalinin

    npj Computational Materials   vol. 6 ( 1 )   2020.9

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    DOI: 10.1038/s41524-020-00384-6

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  • Bayesian inference in band excitation Scanning Probe Microscopy for optimal dynamic model selection in imaging

    Rama K. Vasudevan, Kyle P. Kelley, Eugene Eliseev, Stephen Jesse, Hiroshi Funakubo, Anna Morozovska, Sergei V. Kalinin

    J. Appl. Phys.   vol. 128   2020.8

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    The universal tendency in scanning probe microscopy (SPM) over the last two
    decades is to transition from simple 2D imaging to complex detection and
    spectroscopic imaging modes. The emergence of complex SPM engines brings forth
    the challenge of reliable data interpretation, i.e. conversion from detected
    signal to descriptors specific to tip-surface interactions and subsequently to
    materials properties. Here, we implemented a Bayesian inference approach for
    the analysis of the image formation mechanisms in band excitation (BE) SPM.
    Compared to the point estimates in classical functional fit approaches,
    Bayesian inference allows for the incorporation of extant knowledge of
    materials and probe behavior in the form of corresponding prior distribution
    and return the information on the material functionality in the form of readily
    interpretable posterior distributions. We note that in application of Bayesian
    methods, special care should be made for proper setting on the problem as model
    selection vs. establishing practical parameter equivalence. We further explore
    the non-linear mechanical behaviors at topological defects in a classical
    ferroelectric material, PbTiO3. We observe the non-trivial evolution of Duffing
    resonance frequency and the nonlinearity of the sample surface, suggesting the
    presence of the hidden elements of domain structure. These observations suggest
    that the spectrum of anomalous behaviors at the ferroelectric domain walls can
    be significantly broader than previously believed and can extend to
    non-conventional mechanical properties in addition to static and microwave
    conductance.

    DOI: 10.1063/5.0005323

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  • Dynamic Manipulation in Piezoresponse Force Microscopy: Creating Nonequilibrium Phases with Large Electromechanical Response Reviewed International journal

    Kyle P. Kelley, Yao Ren, Anna, N. Morozovska, Eugene A. Eliseev, Yoshitaka Ehara, Hiroshi Funakubo, Thierry Giamarchi, Nina Balke, Rama K. Vasudevan, Ye Cao, Stephen Jesse, Sergei V. Kalinin

    ACS Nano 2020   vol. 14 ( 8 )   10569 - 10577   2020.8

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    Domains walls and topological defects in ferroelectric materials have emerged
    as a powerful new paradigm for functional electronic devices including memory
    and logic. Similarly, wall interactions and dynamics underpin a broad range of
    mesoscale phenomena ranging from giant electromechanical responses to memory
    effects. Exploring the functionalities of individual domain walls, their
    interactions, and controlled modifications of the domain structures is crucial
    for applications and fundamental physical studies. However, the dynamic nature
    of these features severely limits studies of their local physics since
    application of local biases or pressures in piezoresponse force microscopy
    induce wall displacement as a primary response. Here, we introduce a
    fundamentally new approach for the control and modification of domain
    structures based on automated experimentation whereby real space image-based
    feedback is used to control the tip bias during ferroelectric switching,
    allowing for modification routes conditioned on domain states under the tip.
    This automated experiment approach is demonstrated for the exploration of
    domain wall dynamics and creation of metastable phases with large
    electromechanical response.

    DOI: 10.1021/acsnano.0c04601

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  • High yield preparation of (100)c-oriented (K,Na)NbO3 thick films by hydrothermal method using amorphous niobium source Reviewed

    Yoshiharu Ito, Akinori Tateyama, Yoshiko Nakamura, Takao Shimizu, Minoru Kurosawa, Hiroshi Uchida, Takahisa Shiraishi, Takanori Kiguchi, Toyohiko J. Konno, Mutsuo Ishikawa, Nobuhiro Kumada, Hiroshi Funakubo

    J. Ceram. Soc. Jpn.   vol. 128 ( no. 8 )   512 - 517   2020.8

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    DOI: 10.2109/jcersj2.20023

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  • Optimization of deposition conditions of Y doped-SrZrO3 thin films fabricated by pulsed laser deposition

    Hiroki Tanaka, Kiyoshi Uchiyama, Takao Shimizu, Hiroshi Funakubo

    J. Ceram. Soc. Jpn.   vol. 128 ( no. 8 )   436 - 440   2020.8

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    DOI: 10.2109/jcersj2.19234

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  • Preparation of near-1-μm-thick {100}-oriented epitaxial Y-doped HfO2 ferroelectric films on (100)Si substrates by an RF magnetron sputtering method

    Hiroshi Funakubo

    J.Ceram. Soc. Jpn   128 ( 8 )   539 - 543   2020.8

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    DOI: 10.2109/jcersj2.20019

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  • Enhanced intrinsic piezoelectric response in (001)-epitaxial single c-domain Pb(Zr,Ti)O3 nanorods

    Kazuki Okamoto, Tomoaki Yamada, Kentaro Nakamura, Hidenori Takana, Osami Sakata, Mick Phillips, Takanori Kiguchi, Masahito Yoshino, Hiroshi Funakubo, Takanori Nagasaki

    Applied Physics Letters   vol. 117 ( 4 )   2020.7

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    DOI: 10.1063/5.0012998

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  • Structural and electrical characterization of hydrothermally deposited piezoelectric (K,Na)(Nb,Ta)O3 thick films Reviewed

    Takahisa Shiraishi, Yuta Muto, Yoshiharu Ito, Takanori Kiguchi, Kazuhisa Sato, Masahiko Nishijima, Hidehiro Yasuda, Hiroshi Funakubo, Toyohiko J. Konno

    Journal of Materials Science   55 ( 21 )   8829 - 8842   2020.7

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    DOI: 10.1007/s10853-020-04663-x

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  • Barkhausen noise analysis of thin film ferroelectrics

    Keisuke Yazawa, Benjamin Ducharne, Hiroshi Uchida, Hiroshi Funakubo, John E. Blendell

    Applied Physics Letters   Vol. 117 ( 1 )   2020.7

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    DOI: 10.1063/5.0012635

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  • Temperature dependence on the domain structure of epitaxial PbTiO3 films grown on single-crystal substrates with different lattice parameters

    Yoshitaka Ehara, Takaaki Nakashima, Daichi Ichinose, Takao Shimizu, Tomoaki Yamada, Ken Nishida, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   vol. 59   2020.7

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    DOI: 10.35848/1347-4065/aba2bf

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  • Rapid deposition of (K,Na)NbO3 thick films using microwave-assisted hydrothermal technique Reviewed

    Hiroshi Uchida, Masaki Okura, Yoshiharu Ito, Takahisa Shiraishi, Takanori Kiguchi, Toyohiko J. Konno, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   vol. 59 ( SP )   SPPB02 - SPPB02   2020.7

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    DOI: 10.35848/1347-4065/aba50e

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  • Large electromechanical responses driven by electrically induced dense ferroelastic domains:beyond morphotropic phase boundary Reviewed

    Mitsumasa Nakajima, Takao Shimizu, Hiroshi Nakaki, Tomoaki Yamada, Ayumi Wada, Takaaki Nakashima, Yoshitaka Ehara, Hiroshi Funakubo

    ACS Appl. Electron. Mater. 2020   vol. 2 ( 7 )   1908 - 1916   2020.6

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    DOI: 10.1021/acsaelm.0c00220

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  • NiSi2 as a Bottom Electrode for Enhanced Endurance of Ferroelectric Y-doped HfO2 Thin Films

    Joel Molina-Reyes, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima

    Jpn. J. Appl. Phys.   Vol. 59   2020.2

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    DOI: 10.35848/1347-4065/ab6b7c

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  • Thickness- and orientation- dependences of Curie temperature in ferroelectric epitaxial Y doped HfO2 films

    Takanori Mimura, Takao Shimizu, Yoshio Katsuya, Osami Sakata, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   Vol. 59   2020.2

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    DOI: 10.35848/1347-4065/ab6d84

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  • Room-temperature deposition of ferroelectric HfO2-based films by the sputtering metho

    Takanori Mimura, Takao Shimizu, Hiroshi Uchida, Hiroshi Funakubo

    Appl. Phys. Lett.   Vol. 116 ( 6 )   2020.2

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    DOI: 10.1063/1.5140612

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  • Preparation of iridium metal films by spray chemical vapor deposition

    Yoshiyuki Seki, Yutaka Sawada, Hiroshi Funakubo, Kazuhisa Kawano, Noriaki Oshima

    MRS Advances   2020.2

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    DOI: 10.1557/adv.2020.99

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  • Epitaxial growth of Mg2Si films on (111) Si substrates covered with epitaxial SiC layers

    Atsuo Katagiri, Shota Ogawa, Takao Shimizu, Masaaki Matsushima, Kensuke Akiyama, Hiroshi Uchida, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   Vol. 59   2020.1

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    DOI: 10.7567/1347-4065/ab65b0

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  • Thermoelectric (BaxSr1–x)Si2 films prepared by sputtering method over the barium solubility limit

    Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   vol. 59   2020.1

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    DOI: 10.7567/1347-4065/ab645b

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  • Fabrication and characterization of (CaxSr1-x)Si-2 films prepared by co-sputtering method

    Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo

    MRS ADVANCES   5 ( 10 )   451 - 458   2020

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    DOI: 10.1557/adv.2020.67

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  • Fabrication and characterization of ReO3-type dielectric films

    Masanori Kodera, Ayako Taguchi, Takao Shimizu, Hiroki Moriwake, Hiroshi Funakubo

    Journal of Materials Chemistry C   8 ( 14 )   4680 - 4684   2020

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    DOI: 10.1039/D0TC00821D

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  • Bayesian Microscopy: Model Selection for Extracting Weak Nonlinearities from Scanning Probe Microscopy Data

    Rama Vasudevan, Kyle Kelley, Eugene Eliseev, Hiroshi Funakubo, Stephen Jesse, Anna Morozovska, Sergei Kalinin

    Microscopy and Microanalysis   2126 - 2127   2020

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    DOI: 10.1017/S1431927620020528

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  • 3J1-1 Development of high intensity and high frequency ultrasonic transducers using piezoelectric films

    Ishikawa Mutsuo, Tsukamoto Ayaho, Saito Nao, Endo Akito, Yasui Shintaro, Tabaru Marie, Funakubo Hiroshi, Kurosawa Minoru

    Proceedings of Symposium on Ultrasonic Electronics   40   n/a   2019.11

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    DOI: 10.24492/use.40.0_3j1-1

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  • Electric-Field-Driven Nanosecond Ferroelastic-Domain Switching Dynamics in Epitaxial Pb(Zr,Ti)O3 Film International journal

    Hyeon Jun Lee, Takao Shimizu, Hiroshi Funakubo, Yasuhiko Imai, Osami Sakata, Seung Hyun Hwang, Tae Yeon Kim, Changjae Yoon, Cheng Dai, Long, Q. Chen, Su Yong Lee, Ji Young Jo

    Phys. Rev. Lett.   Vol. 123 ( 21 )   217601 - 217601   2019.11

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    DOI: 10.1103/PhysRevLett.123.217601

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  • Effect of Ta-substitution on the deposition of (K,Na)(Nb,Ta)O3 films by hydrothermal method Reviewed

    Yuta Muto, Takahisa Shiraishi, Yoshiharu Ito, Akinori Tateyama, Hiroshi Uchida, Takanori Kiguchi, Hiroshi Funakubo, Toyohiko J. Konno

    Japanese Journal of Applied Physics   Vol. 58   SLLB12-1 - SLLB12-5   2019.11

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    DOI: 10.7567/1347-4065/ab3a18

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  • Electric field-induced change in the crystal structure of MOCVD-Pb(Zr,Ti)O3 films near the phase boundary Reviewed

    Hidehisa Inoue, Takao Shimizu, Hiroshi Funakubo

    Japanese Journal of Applied Physics   Vol. 58   2019.11

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    DOI: 10.7567/1347-4065/ab37ef

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  • Ferroelectric properties of epitaxial Bi2SiO5 thin films grown on SrTiO3 substrates with various orientations Reviewed

    Masanori Kodera, Takao Shimizu, Hiroshi Funakubo

    Japanese Journal of Applied Physics   Vol. 58   2019.11

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    DOI: 10.7567/1347-4065/ab36cf

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  • Epitaxial growth of (Bi,K)TiO3-Bi(Mg,Ti)O3 (001) films and their ferroelectric and piezoelectric properties

    Junpei Morishita, Hirokazu Kazama, Yusuke Sato, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   Vol. 58   2019.9

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    DOI: 10.7567/1347-4065/ab3a11

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  • Growth of epitaxial (K, Na)NbO3 films with various orientations by hydrothermalmethod and their properties Reviewed

    Yoshiharu Ito, Akinori Tateyama, Yoshiko Nakamura, Takao Shimizu, Minoru Kurosawa, Hiroshi Uchida, Takahisa Shiraishi, Takanori Kiguchi, Toyohiko J. Konno, Mutsuo Ishikawa, Hiroshi Funakubo

    Jpn. J. Appl. Puys.   Vol. 58   SLLB14-1 - SLLB14-8   2019.9

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    DOI: 10.7567/1347-4065/ab3958

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  • Ferroelastic domain motion by pulsed electric field in (111)/(11¯1 ) rhombohedral epitaxial Pb(Zr0.65Ti0.35)O3 thin films: Fast switching and relaxation Reviewed

    Y. Ehara, T. Shimizu, S. Yasui, T. Oikawa, T. Shiraishi, H. Tanaka, N. Kanenko, R. Maran, T. Yamada, Y. Imai, O. Sakata, N. Valanoor, H. Funakubo

    Phys. Rev. B   100 ( 10 )   104116-1 - 104116-7   2019.9

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    DOI: 10.1103/PhysRevB.100.104116

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  • Kinetics of Interfacial Microstructural Variation across Insulator-Thermoelectric Semiconductor interface and its Effects on Thermoelectric Properties of Magnesium Silicide Thin Films Reviewed

    P.S. Sankara, Rama Krishnan, Anna N. Morozovska, Eugene A. Eliseev, Shota Ogawa, Atsuo Katagiri, Masaaki Matsushima, Kensuke Akiyama, Hiroshi Uchida, Hiroshi Funakubo

    Materialia   Vol. 7   pp. 100340   2019.9

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    DOI: 10.1016/j.mtla.2019.100375

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  • Growth of (110)-one-axis-oriented perovskite-type oxide thin films with local epitaxy on (111)SrTiO3 single crystal substrates Reviewed

    Tomoya Sato, Takanor Kiguchi, Toyohiko Konno, Junichi Kimura, Daichi Ichinose, Takanori Mimura, Hiroshi Funakubo, Kiyoshi Uchiyama

    Jpn. J. Appl. Phys.   Vol. 58 ( SL )   SLLB01-1 - SLLB01-5   2019.8

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    Thin films of BaCe0.8Y0.2O3−δ (BCYO) and SrZr0.8Y0.2O3-δ (SZYO) with a perovskite structure were deposited on (111)Pt//(111)SrTiO3 (STO) single crystal substrates by an RF-magnetron sputtering method. X-ray diffraction revealed that the BCYO and SZYO thin films were polycrystalline but highly (110)-one-axis oriented with local epitaxy on (111)Pt//(111)STO in the 〈110〉-direction. However, these films have six-fold symmetric domains and each domain showed in-plane rotations because of the lattice mismatches between (110)BCYO or (110)SZYO and (111)Pt. Especially, the BCYO film showed larger in-plane rotation than that of SZYO because of its larger lattice mismatch.

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  • Ferroelectricity in YO1.5-HfO2 films around 1 μm in thickness Reviewed

    Takanori Mimura, Takao Shimizu, Hiroshi Funakubo

    Applied Physics Letters   Vol. 115 ( 3 )   pp. 032901   2019.7

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    DOI: 10.1063/1.5097880

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  • Deposition of orientation-controlled thick (K, Na)NbO3 films on metal substrates by repeated hydrothermal deposition technique Reviewed

    Yoshiharu ITO, Akinori TATEYAMA, Yoshiko NAKAMURA, Takao SHIMIZU, Minoru KUROSAWA, Hiroshi UCHIDA, Takahisa SHIRAISHI, Takanori KIGUCHI, Toyohiko J. KONNO, Mutsuo ISHIKAWA, Hiroshi FUNAKUBO

    Journal of the Ceramic Society of Japan   Vol. 127 ( No. 7 )   pp. 478 - 484   2019.7

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    DOI: 10.2109/jcersj2.19008

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  • Formation of the orthorhombic phase in CeO2-HfO2 solid solution epitaxial thin films and their ferroelectric properties Reviewed

    T. Shiraishi, S. Choi, T. Kiguchi, T. Shimizu, H. Funakubo, T. J. Konno

    Applied Physics Letters   Vol. 14   pp. 232902 - 1   2019.6

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    DOI: 10.1063/1.5097980

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  • Low-temperature deposition of Li substituted (K,Na)NbO3 films by a hydrothermal method and their structural and ferroelectric properties Reviewed

    Takahisa SHIRAISHI, Yuta MUTO, Yoshiharu ITO, Akinori TATEYAMA, Hiroshi UCHIDA, Takanori KIGUCHI, Minoru K. KUROSAWA, Hiroshi FUNAKUBO, Toyohiko. J., KONNO

    Journal of the Ceramic Society of Japan   Vol. 127 ( No. 6 )   pp. 388 - 393   2019.6

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    DOI: 10.2109/jcersj2.19041

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  • Evaluation of phase and thermoelectric properties of thin film SrSi2 Reviewed

    Kodai AOYAMA, Takao SHIMIZU, Hideto KURAMOCHI, Masami MESUDA, Ryo AKIIKE, Yoshisato KIMURA, Hiroshi FUNAKUBO

    Journal of the Ceramic Society of Japan   Vol. 127 ( No. 6 )   pp. 394 - 398   2019.6

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    DOI: 10.2109/jcersj2.19016

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  • Origin of giant negative piezoelectricity in a layered van der Waals ferroelectric International journal

    Lu Yo, Yang Zhang, Shuang Zhou, Apoorva Chaturvedi, Samuel A. Morris, Fucai Liu, Lei Chang, Daichi Ichinose, Hiroshi Funakubo, Weijin Hu, Tom Wu, Zheng Liu, Shuai Dong, Junling Wang

    Science Advances   Vol. 5 ( No. 4 )   eaav3780   2019.4

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    Recent research on piezoelectric materials is predominantly devoted to enhancing the piezoelectric coefficient, but overlooks its sign, largely because almost all of them exhibit positive longitudinal piezoelectricity. The only experimentally known exception is ferroelectric polymer poly(vinylidene fluoride) and its copolymers, which condense via weak van der Waals (vdW) interaction and show negative piezoelectricity. Here we report quantitative determination of giant intrinsic negative longitudinal piezoelectricity and electrostriction in another class of vdW solids-two-dimensional (2D) layered ferroelectric CuInP2S6. With the help of single crystal x-ray crystallography and density-functional theory calculations, we unravel the atomistic origin of negative piezoelectricity in this system, which arises from the large displacive instability of Cu ions coupled with its reduced lattice dimensionality. Furthermore, the sizable piezoelectric response and negligible substrate clamping effect of the 2D vdW piezoelectric materials warrant their great potential in nanoscale, flexible electromechanical devices.

    DOI: 10.1126/sciadv.aav3780

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  • Effects of starting materials on the deposition behavior of hydrothermally synthesized {100}c -oriented epitaxial (K,Na)NbO3 thick films and their ferroelectric and piezoelectric properties Reviewed

    Hiroshi Funakubo

    J. Crystal Growth   511   1 - 7   2019.4

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    DOI: 10.1016/j.jcrysgro.2019.01.019

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  • Strain-induced resistance change in V2O3 films on piezoelectric ceramic disks Reviewed

    Joe Sakai, Maxime Bavencoffe, Beatrice Negulescu, Patrice Limelette, Jérôme Wolfman, Akinori Tateyama, Hiroshi Funakubo

    Journal of Applied Physics   Vol. 125 ( 11 )   2019.3

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    DOI: 10.1063/1.5083941

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  • Preparation of CaMgSi and Ca7Mg7.25Si14 single phase films and their thermoelectric properties Reviewed

    Mutsuo Uehara, Atsuo Katagiri, Mao Kurokawa, Kensuke Akiyama, Takao Shimizu, Masaaki Matsushima, Hiroshi Uchida, Yoshisato Kimura, Hiroshi Funakubo

    MRS Adv.   Vol. 4 ( No. 25-26 )   1503 - 1508   2019.2

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    DOI: 10.1557/adv.2019.129

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  • Impact of stress on the crystal structural nonuniformity along the film thickness direction by microfabrication of Pb(Zr, Ti)O3 island with morphotropic phase boundary composition

    Masamichi NISHIDE, Shintaro YOKOYAMA, Hiroshi FUNAKUBO, Takashi KATODA, Ken NISHIDA

    Journal of the Ceramic Society of Japan   Vol. 127 ( No. 2 )   2019.2

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  • Effects of heat treatment and in-situ high temperature XRD study on the formation of ferroelectric epitaxial Y doped HfO2 film. Reviewed

    Takanori Mimura, Takao Shimizu, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Yoshio Katsuya, Osami Sakata, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   Vol. 58   SBBB09-1 - SBBB09-5   2019.2

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  • Structural origin of temperature-dependent ferroelectricity

    Min Hyuk Park, Takao Shimizu, Hiroshi Funakubo, Uwe Schroeder

    Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices   193 - 216   2019.1

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    DOI: 10.1016/B978-0-08-102430-0.00012-7

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  • Epitaxial growth of doped HfO2 ferroelectric materials

    Takao Shimizu, Hiroshi Funakubo

    Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices   173 - 192   2019.1

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    DOI: 10.1016/B978-0-08-102430-0.00004-8

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  • Superdomain structure and high conductivity at the vertices in the (111)-oriented epitaxial tetragonal Pb(Zr,Ti)O3 thin film Reviewed

    Sang Mo Yang, Yeong Jae Shin, Yoshitaka Ehara, Hiroshi Funakubo, Jong-Gul Yoon, James F. Sco, Tae Won Noh

    Current Applied Physics   Vol. 19 ( No. 4 )   418 - 423   2019.1

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    DOI: 10.1016/j.cap.2019.01.010

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  • MOCVD growth of β-FeSi2 film on modified Si surface by silver and enhancement of luminescence Reviewed

    Kensuke Akiyama, Sakiko Nojima, Ryo Takahashi, Yoshihisa Matsumoto, Hiroshi Funakubo

    J. Cryst. Growth   Vol. 506   131 - 134   2019.1

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    DOI: 10.1016/j.jcrysgro.2018.10.022

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  • Metal-insulator transition in V2O3 thin film caused by tip-induced strain Reviewed

    N. Alyabyeva, J. Sakai, M. Bavencoffe, J. Wolfman, P. Limelette, H. Funakubo, A. Ruyter

    APPLIED PHYSICS LETTERS   Vol. 113 ( 24 )   2018.12

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    DOI: 10.1063/1.5063712

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  • Formation of polar phase in Fe-doped ZrO2 epitaxial thin films Reviewed

    S. Choi, T. Shiraishi, T. Kiguchi, T. Shimizu, H. Funakubo, T. J. Konno

    Appl. Phys. Lett.   Vol. 113   262903-1 - 262903-5   2018.12

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    DOI: 10.1063/1.5063757

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  • Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films Reviewed

    Takao Shimizu, Takanori Mimura, Takanori Kiguchi, Takahisa Shiraishi, Toyohiko Konno, Yoshio Katsuya, Osami Sakata, Hiroshi Funakubo

    Appl. Phys. Lett.   Vol. 113 ( 21 )   212901-1 - 212901-5   2018.11

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    DOI: 10.1063/1.5055258

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  • Evaluation of Strain Components in PbTiO3 Thin Films by Micro-Raman Spectroscopy

    Masamichi Nishide, Masashi Matsuoka, Takashi Katoda, Satoru Utsugi, Hiroshi Funakubo, Hiromi Shima, Ken Nishida, Takashi Yamamoto

    J. Ceram. Soc. Jpn.   Vol. 126 ( No. 11 )   2018.11

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  • Growth of Epitaxial Bismuth Ruthenate Pyrochlore Films on Yttria-stabilized Zirconia (YSZ) and YSZ-buffered Si Substrates by Metal-organic Chemical Vapor Deposition Reviewed

    Hirokazu Chiba, Rikyu Ikariyama, Shintaro Yasui, HIROSHI FUNAKUBO

    Thin Solid Films   Vol. 669 ( No. 1 )   471 - 474   2018.10

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    DOI: 10.1016/j.tsf.2018.10.052

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  • Clinical Characteristics of Nonobese Patients with Acute Coronary Syndrome and Increased Epicardial Fat Volume.

    Ken Harada, Hitomi Suzuki, Shun Matsunaga, Tomohiro Onishi, Yoshinori Nishikawa, Hiroshi Funakubo, Kumiko Mamiya, Tomoyuki Nagao, Norihiro Shinoda, Shinichi Sakai, Masataka Kato, Nobuyuki Marui, Hideki Ishii, Tetsuya Amano, Tatsuaki Matsubara, Toyoaki Murohara

    Journal of atherosclerosis and thrombosis   25 ( 10 )   1044 - 1052   2018.10

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    AIM: Increased epicardial fat volume (EFV) is an independent risk factor for acute coronary syndrome (ACS). Although EFV increases with body mass index (BMI), some ACS patients have an increased EFV but normal BMI. We here investigated the clinical characteristics of nonobese ACS patients with an increased EFV. METHODS: A total of 197 Japanese patients hospitalized for ACS was evaluated for EFV, abdominal visceral fat area (VFA), and lipid and glucose profiles. Control subjects comprised 141 individuals who were suspected of having ACS but whose coronary computed tomography findings were normal. RESULTS: EFV was increased in ACS patients compared with control subjects (120±47 versus 95±45 mL, P<0.01). ACS patients were divided into four groups based on average EFV (120 mL) and a BMI obesity cutoff of 25 kg/m2. For the 30 nonobese ACS patients with an above-average EFV, EFV was positively correlated with VFA (r=0.23, P=0.031). These individuals were significantly older (74±10 years) and tended to have a higher homeostasis model assessment-insulin resistance value (5.5±3.8) compared with other ACS patients. Among nonobese study subjects, EFV was independently associated with ACS (odds ratio=2.01, P=0.021) and correlated with abdominal circumference (r=0.26, P=0.017). CONCLUSION: Nonobese ACS patients with an increased EFV were elderly and tended to manifest insulin resistance. Measurement of EFV may prove informative for evaluation of ACS risk among elderly nonobese individuals with an increased abdominal girth.

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  • Hydrothermal Deposition of KNbO3 Films on Metal Substrates having Three-Dimensional Structure Reviewed

    Takahisa SHIRAISHI, Noriyuki KANEKO, Minoru K. KUROSAWA, Hiroshi UCHIDA, Hiroshi FUNAKUBO

    J. Jpn. Soc. Powder Powder Metallurgy   Vol. 65 ( No. 10 )   673 - 677   2018.10

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    DOI: 10.2497/jjspm.65.673

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  • Epitaxial ferroelectric Y-doped HfO2 film grown by the RF magnetron sputtering Reviewed

    Taisei Suzuki, Takao Shimizu, Takanori Mimura, Hiroshi Uchida, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   Vol. 57 ( 11S )   11UF15   2018.10

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  • Domain orientation relationship of orthorhombic and coexisting monoclinic phases of YO1.5-doped HfO2 epitaxial thin films Reviewed

    Takanori Kiguchi, Takahisa Shiraishi, Takao Shimizu, Hiroshi Funakubo, Toyohiko J. Konno

    Jpn. J. Appl. Phys.   Vol. 57 ( 11S )   11UF16-1 - 11UF16-7   2018.10

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    DOI: 10.7567/JJAP.57.11UF16

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  • Crystallization behavior and ferroelectric property of HfO2–ZrO2 films fabricated by chemical solution deposition Reviewed

    Shuhei Nakayama, Hiroshi Funakubo, Hiroshi Uchida

    Jpn. J. Appl. Phys.   Vol. 57 ( 11S )   11UF06-1 - 11UF06-5   2018.9

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    DOI: 10.7567/JJAP.57.11UF06

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  • Thickness-dependent crystal structure and electric properties of epitaxial ferroelectric Y2O3-HfO2 films Reviewed

    Takanori Mimura, Takao Shimizu, Hiroshi Uchida, Osami Sakata, Hiroshi Funakubo

    Appl. Phys. Lett.   Vol. 113 ( 10 )   102901-1 - 102901-4   2018.9

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    DOI: 10.1063/1.5040018

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  • Domain structure transition from two to three dimensions in tensile strained (100)/ (001)-oriented epitaxial tetragonal PZT film Reviewed

    Daichi Ichinose, Takao Shimizu, Osami Sakata, Tomoaki Yamada, Hiroshi Funakubo

    Appl. Phys. Lett.   Vol. 113 ( 13 )   132905-1 - 132905-5   2018.9

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    DOI: 10.1063/1.5042470

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  • Epitaxial growth of perovskite-type oxide thin film on (111)SrTiO3 substrate using (101)PdO as a buffer layer Reviewed

    Hiroki Tanaka, Kiyoshi Uchiyama, Takahiro Oikawa, Takao Shimizu, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   Vol. 57 ( 11S )   11UF04 - 11UF04   2018.9

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  • Fabrication of ferroelectric Fe doped HfO2 epitaxial thin films by ion-beam sputtering method and their characterization Reviewed

    Takahisa Shiraishi, Sujin Choi, Takanori Kiguchi, Takao Shimizu, Hiroshi Uchida, Hiroshi Funakubo, Toyohiko J. Konno

    Jpn. J. Appl. Phys.   Vol. 57   11UF02-1 - 11UF02-5   2018.8

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  • Time response demonstration of in-situ lattice deformation under an applied electric field using synchrotron-based time-resolved XRD in polar-axis-oriented epitaxial Pb(Zr,Ti)O3 film Reviewed

    Tomoya Sato, Daichi Ichinose, Naoya Oshima, Takanori Mimura, Yuichi Nemoto, Takao Shimizu, Yasuhiko Imai, Hiroshi Uchida, Osami Sakata, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   Vol. 57 ( 9 )   0902B8-1 - 0902B8-5   2018.6

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  • Solid-solution Thin Films of Ternary BaTiO_3_-Bi(Mg_1/2_Ti_1/2_)O_3_-BiFeO_3_ System Epitaxially Grown on SrRuO_3_//SrTiO_3_ Substrates via Chemical Solution Process Reviewed

    Hiroshi Uchida, Noriyuki Kaneko, Shintaro Yasui, Hiroshi Funakubo

    Japanese Journal of Applied Physics   vol. 57 ( 9 )   2018.6

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    DOI: 10.7567/JJAP.57.0902B5

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  • Thickness and temperature dependences of dielectric properties of {111}-oriented epitaxial Pb(Mg1/3Nb2/3)O3 and 0.6Pb(Mg1/3Nb2/3)O3 ー 0.4PbTiO3 films

    Hiroshi Funakubo

    Jpn. J. Appl. Phys.   2018.6

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    DOI: 10.7567/JJAP.57.0902BA

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  • Stability of orthorhombic phase in (111)-oriented YO1.5-substituted HfO2 films Reviewed

    Takao Shimizu, Kiliha Katayama, Hiroshi Funakubo

    J. Ceram. Soc. Jpn.   vol. 126 ( no. 5 )   269 - 275   2018.5

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    DOI: 10.2109/jcersj2.17247

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  • Preparation of {001}c-oriented epitaxial (K, Na)NbO3 thick films by repeated hydrothermal deposition technique Reviewed

    Hiroshi Funakubo

    J. Ceram. Soc. Jpn.   126 ( 5 )   281 - 285   2018.5

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    DOI: 10.2109/jcersj2.17251

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  • Growth of (111)-oriented epitaxial magnesium silicide (Mg2Si) films on (001) Al2O3 substrates by RF magnetron sputtering and their properties Reviewed

    Atsuo Katagiri, Shota Ogawa, Mutsuo Uehara, P. S. Sankara, Rama Krishnan, Mao Kurokawa, Masaaki Matsushima, Takao Shimizu, Kensuke Akiyama, Hiroshi Funakubo

    J. Mater. Sic.   vol. 53 ( no. 7 )   5151 - 5158   2018.4

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    DOI: 10.1007/s10853-017-1902-z

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  • Control of p- and n-type Conduction in Thermoelectric Non-doped Mg2Si Thin Films Prepared by Sputtering Method Reviewed

    Mao Kurokawa, Takao Shimizu, Mutsuo Uehara, Atsuo Katagiri, Kensuke Akiyama, Masaaki Matsushima, Hiroshi Uchida, Yoshisato Kimura, Hiroshi Funakubo

    MRS Advances   vol. 3 ( no. 24 )   1355 - 1359   2018.2

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    DOI: 10.1557/adv.2018.150

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  • Evaluation of Chemical Stability in Perovskite-Type Proton-Conductive Oxide Thin-Films

    Tomoya Sato, Daichi Ichinose, Takaaki Inoue, Mutsuo Uehara, Kiriha Katayama, Hiroshi Funakubo, Kiyoshi Uchiyama

    Science of Advanced Materials   vol. 10 ( 1 )   8 - 11   2018.1

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    DOI: 10.1166/sam.2018.2852

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  • Room temperature photoluminescence spectrum from β-FeSi2 films Reviewed

    Kensuke Akiyama, Yoshihisa Matsumoto, Hiroshi Funakubo

    Proceedings of SPIE - The International Society for Optical Engineering   10554   2018

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    DOI: 10.1117/12.2289984

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  • On the Use of 31Mg for b-Detected NMR Studies of Solids Reviewed

    R. M, L. McFadden, A. Chatzichristos, M. H. Dehn, D. Fujimoto, H. Funakubo, A. Gottberg, T. Hitosugi, V. L. Karner, R. F. Kiefl, M. Kurokawa, J. Lassen, C. D. Philip Levy, R. Li, G. D. Morris, M. R. Pearson, S. Shiraki, M. Stachura, J. Sugiyama, D. M. Szunyogh, W. A. MacFarlane

    JPS Conference Proceedings   21   011407   2018

  • Effect of substrate type and temperature on the growth of thin Ru films by metal organic chemical vapor deposition Reviewed

    Hirokazu Chiba, Masaki Hirano, Kazuhisa Kawano, Noriaki Oshima, Hiroshi Funakubo

    Materials Science in Semiconductor Processing   vol. 70   73 - 77   2017.11

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    DOI: 10.1016/j.mssp.2016.11.032

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  • Effect of the film thickness on the crystal structure and ferroelectric properties of (Hf0.5Zr0.5)O2 thin films deposited on various substrates Reviewed

    Takahisa Shiraishi, Kiliha Katayama, Tatsuhiko Yokouchi, Takao Shimizu, Takahiro Oikawa, Osami Sakata, Hiroshi Uchida, Yasuhiko Imai, Takanori Kiguchi, Toyohiko J. Konno, Hiroshi Funakubo

    Materials Science in Semiconductor Processing   vol. 70   239 - 245   2017.11

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    DOI: 10.1016/j.mssp.2016.12.008

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  • Low Temperature Operation of Solid Oxide Fuel Cells (SOFCs) with Proton Conductive Electrolyte Deposited on Pd Foil Substrates

    Tetsuro Kariya, Hiroki Tanaka, Kiyoshi Uchiyama, Tomoki Hirono, Tetsuji Kuse, Mitsunori Henmi, Mitsutaka Hirose, Isao Kimura, Koukou Suu, Hiroshi Funakubo

    Science of Advanced Materials   9 ( 10 )   1797 - 1800   2017.10

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    DOI: 10.1166/sam.2017.2805

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  • Influence of Internal Strains of (110)-One-Axis-Oriented (Ba0.5Sr0.5)TiO3 (BST) Thin Films on Their Dielectric Behaviors Reviewed

    Oshima Naoya, Uchiyama Kiyoshi, Ehara Yoshitaka, Oikawa Takahiro, Tanaka Hiroki, Sato Tomoya, Uchida Hiroshi, Yamada Tomoaki, Funakubo Hiroshi

    SCIENCE OF ADVANCED MATERIALS   9 ( 10 )   1806 - 1809   2017.10

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    DOI: 10.1166/sam.2017.2808

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  • Fabrication and characterization of {110}-oriented Pb(Zr, Ti)O-3 thin films on Pt/SiO2/Si substrates using PdO//Pd buffer layer Reviewed

    Naoya Oshima, Kiyoshi Uchiyama, Yoshitaka Ehara, Takahiro Oikawa, Daichi Ichinose, Hiroki Tanaka, Tomoya Sato, Hiroshi Uchida, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS   56 ( 10 )   2017.10

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    DOI: 10.7567/JJAP.56.10PF09

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  • In-plane orientation and composition dependences of crystal structure and electrical properties of {100}-oriented Pb(Zr, Ti)O-3 films grown on (100) Si substrates by metal organic chemical vapor deposition Reviewed

    Shoji Okamoto, P. S. Sankara Rama Krishnan, Satoshi Okamoto, Shintaro Yokoyama, Kensuke Akiyama, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS   56 ( 10 )   2017.10

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    DOI: 10.7567/JJAP.56.10PF12

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  • Dynamic observation of ferroelectric domain switching using scanning nonlinear dielectric microscopy Reviewed

    Yoshiomi Hiranaga, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho

    JAPANESE JOURNAL OF APPLIED PHYSICS   56 ( 10 )   2017.10

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    DOI: 10.7567/JJAP.56.10PF16

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  • Experimental study of effect of strain on electrocaloric effect in (001)-epitaxial (Ba,Sr)TiO

    Yamada Tomoaki, Matsuo Shogo, Kamo Takafumi, Funakubo Hiroshi, Yoshino Masahito, Nagasaki Takanori

    Jpn. J. Appl. Phys.   56 ( 10 )   10PF15   2017.9

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    The effect of strain on the electrocaloric effect in (001)-epitaxial (Ba,Sr)TiO<inf>3</inf>(BST) thin films was experimentally investigated via indirect estimation by measuring the electric field dependence of polarization at various temperatures. Compressively strained (Ba<inf>0.3</inf>Sr<inf>0.7</inf>)TiO<inf>3</inf>films were deposited on (001)cSrRuO<inf>3</inf>/(001)SrTiO<inf>3</inf>and (001)cSrRuO<inf>3</inf>/(001)(La<inf>0.3</inf>Sr<inf>0.7</inf>)(Al<inf>0.65</inf>Ta<inf>0.35</inf>)O<inf>3</inf>(LSAT) by RF magnetron sputtering. The BST film on (001)cSrRuO<inf>3</inf>/(001)SrTiO<inf>3</inf>showed a higher ferroelectric-to-paraelectric phase transition temperature than that on (001)cSrRuO<inf>3</inf>/(001)LSAT owing to the larger compressive strain. It was revealed that the electrocaloric effect is maximized at around the ferroelectric-to-paraelectric phase transition temperature modified by the compressive strain in the films.

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  • Polarization switching behavior of one-axis-oriented lead zirconate titanate films fabricated on metal oxide nanosheet layer Reviewed

    H. Uchida, D. Ichinose, T. Shiraishi, H. Shima, T. Kiguchi, A. Akama, K. Nishida, T.J. Konno, H.Funakubo

    Japanese Journal of Applied Physics   56 ( 10 )   10PF10-1 - 10PF10-5   2017.9

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    For the application of electronic devices using ferroelectric/piezoelectric components, one-axis-oriented tetragonal Pb(Zr<inf>0.40</inf>Ti<inf>0.60</inf>)O<inf>3</inf>(PZT) films with thicknesses of up to 1 µm were fabricated with the aid of a Ca<inf>2</inf>Nb<inf>3</inf>O<inf>10</inf>nanosheet (ns-CN) template for preferential crystal growth for evaluating their polarization switching behavior. The ns-CN template was supported on ubiquitous silicon (Si) wafer by a simple dip coating technique, followed by the repetitive chemical solution deposition (CSD) of PZT films. The PZT films were grown successfully with preferential crystal orientation of PZT(100) up to the thickness of 1020 nm. The (100)-oriented PZT film with ∼1 µm thickness exhibited unique polarization behavior of ferroelectric polarization, i.e., a marked increase in remanent polarization (P<inf>r</inf>) up to approximately 40 µC/cm2induced by domain switching under high electric field, whereas the film with a lower thickness showed only a lower P<inf>r</inf>of approximately 11 µC/cm2even under a high electric field. The ferroelectric property of the (100)-oriented PZT film after domain switching on ns-CN/Pt/Si can be comparable to those of (001)/(100)-oriented epitaxial PZT films.

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  • Characterization of (111)-oriented epitaxial (K0.5Na0.5)NbO3 thick films deposited by hydrothermal method Reviewed

    Takahisa Shiraishi, Mutsuo Ishikawa, Hiroshi Uchida, Takanori Kiguchi, Minoru K. Kurosawa, Hiroshi Funakubo, Toyohiko J. Konno

    Japanese Journal of Applied Physics   56 ( 10 )   10PF04-1 - 10PF04-5   2017.9

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    (111)-oriented epitaxial (K<inf>0.5</inf>Na<inf>0.5</inf>)NbO<inf>3</inf>films of 2 µm thickness were deposited at 240 °C on (111)<inf>c</inf>SrRuO<inf>3</inf>//(111)SrTiO<inf>3</inf>substrates by a hydrothermal method. Scanning transmission electron microscopy-energy-dispersive X-ray spectroscopy (STEM-EDS) mapping revealed that a K-rich interfacial region existed in the obtained films. Although the as-deposited films were annealed between 240 and 600 °C in O<inf>2</inf>atmosphere, the crystal structure did not markedly change. On the other hand, the leakage current density drastically decreased from 10−2–100to 10−6A/cm2at ±80 kV/cm after annealing above 240 °C. In addition, the relative dielectric constant (ε<inf>r</inf>), remanent polarization (P<inf>r</inf>), and piezoelectric constant (d<inf>33,PFM</inf>) increased with increasing annealing temperature from 300 to 600 °C, and their values were respectively 840, 5.7 µC/cm2, and 64 pm/V for the films annealed at 600 °C.

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  • In-situ observation of ultrafast 90° domain switching under application of an electric field in (100)/(001)-oriented tetragonal epitaxial Pb(Zr0.4Ti0.6)O3 thin films Reviewed International journal

    Y. Ehara, S. Yasui, T. Oikawa, T. Shiraishi, T. Shimizu, H. Tanaka, N. Kanenko, R. Maran, T. Yamada, Y. Imai, O. Sakata, N.n Valanoor, H. Funakubo

    Sci. Rep.   7 ( 9641 )   1 - 7   2017.8

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    DOI: 10.1038/s41598-017-09389-6

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  • Electric-field-induced lattice distortion in epitaxial BiFeO<inf>3</inf> thin films as determined by in situ time-resolved x-ray diffraction Reviewed

    Seiji Nakashima, Osami Sakata, Hiroshi Funakubo, Takao Shimizu, Daichi Ichinose, Kota Takayama, Yasuhiko Imai, Hironori Fujisawa, Masaru Shimizu

    Applied Physics Letters   111 ( 8 )   2017.8

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    DOI: 10.1063/1.5000495

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  • Crystal structure and dielectric / ferroelectric properties of CSD-derived HfO2-ZrO2 solid solution films Reviewed

    C. Abe, S. Nakayama, M. Shiokawa, H. Kawashima, K. Katayama, T. Shiraishi, T. Shimizu, H. Funakubo, H. Uchida

    Ceram. Int   43   S501 - S505   2017.8

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    DOI: 10.1016/j.ceramint.2017.05.253

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  • Charge screening strategy for domain pattern control in nano-scale ferroelectric systems Reviewed International journal

    Tomoaki Yamada, Daisuke Ito, Tomas Sluka, Osami Sakata, Hidenori Tanaka, Hiroshi Funakubo, Takahiro Namazu, Naoki Wakiya, Masahito Yoshino, Takanori Nagasaki, Nava Setter

    SCIENTIFIC REPORTS   7 ( 1 )   5236-1 - 5236-9   2017.7

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    DOI: 10.1038/s41598-017-05475-x

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  • Enhancement of photoluminescence from iron disilicide on Si(111) substrates with Au layers by controlling microstructures Reviewed

    Kensuke Akiyama, Yoshimisa Matsumoto, Hiroshi Funakubo

    Japanese Journal of Applied Physics   56 ( 6 )   2017.6

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    DOI: 10.7567/JJAP.56.06HE03

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  • The microstructural evolution in high sodium epitaxial sodium potassium niobate films deposited by low-temperature hydro-thermal method Reviewed

    P. S, S. R. Krishnan, T. Shiraishi, H. Funakubo

    J. Mater. Sic   52 ( 12 )   6950 - 6961   2017.6

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    DOI: 10.1007/s10853-017-0927-7

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  • Effect of microstructures on electrical conduction properties of beta-FeSi2 epitaxial films Reviewed

    Kensuke Akiyama, Teiko Kadowaki, Yasuo Hirabayashi, Hiroshi Funakubo

    JOURNAL OF CRYSTAL GROWTH   468   744 - 748   2017.6

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    DOI: 10.1016/j.jcrysgro.2016.12.032

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  • Preparation of preferentially (111)-oriented Mg2Si thin films on (001)Al2O3 and (100)CaF2 substrates and their thermoelectric properties Reviewed

    Mao Kurokawa, Mutsuo Uehara, Daichi Ichinose, Takao Shimizu, Kensuke Akiyama, Masaaki Matsushima, Hiroshi Uchida, Yoshisato Kimura, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS   56 ( 5 )   2017.5

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    DOI: 10.7567/JJAP.56.05DC02

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  • Asymmetry in mechanical polarization switching Reviewed

    Haidong Lu, Shi Liu, Ziyu Ye, Shintaro Yasui, Hiroshi Funakubo, Andrew M. Rappe, Alexei Gruverman

    APPLIED PHYSICS LETTERS   110 ( 22 )   222903   2017.5

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    DOI: 10.1063/1.4983381

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  • Direct Imaging of the Relaxation of Individual Ferroelectric Interfaces in a Tensile-Strained Film Reviewed International coauthorship

    Linglong Li, Ye Cao, Suhas Somnath, Yaodong Yang, Stephen Jesse, Yoshitaka Ehara, Hiroshi Funakubo, Long-Qing Chen, Sergei V. Kalinin, Rama K. Vasudevan

    Adv. Electron. Mater.   なし ( 4 )   2017.4

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    DOI: 10.1002/aelm.201600508

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  • Preparation of preferentially (111)-oriented Mg

    Kurokawa Mao, Uehara Mutsuo, Ichinose Daichi, Shimizu Takao, Akiyama Kensuke, Matsushima Masaaki, Uchida Hiroshi, Kimura Yoshisato, Funakubo Hiroshi

    Jpn. J. Appl. Phys.   56 ( 5 )   05DC02   2017.3

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    Mg<inf>2</inf>Si thin films were deposited at 320 °C on (001)Al<inf>2</inf>O<inf>3</inf>and (100)CaF<inf>2</inf>substrates by radio-frequency magnetron sputtering. Both films showed a preferential (111) out-of-plane orientation with an in-plane random orientation irrespective of post-heat treatment. Mg<inf>2</inf>Si films on (001)Al<inf>2</inf>O<inf>3</inf>substrates were under in-plane tensile strain, while those on (100)CaF<inf>2</inf>substrates were under in-plane compressive strain both before and after heat treatment. Heat-treated films showed p-type conduction up to 500 °C. Their electrical conductivity and Seebeck coefficient were almost independent of the kind of substrate within the limit of the present study, from 0.22% compressive strain to 0.34% tensile strain at room temperature.

    DOI: 10.7567/JJAP.56.05DC02

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  • Probing Oxygen Vacancies in BaTiO3 Powders and Single Crystals by Micro-Raman Scattering Reviewed

    Hiroaki FUKUSHIMA, Hirotaka OKA, Hiroki MORIWAKE, Hiroshi UCHIDA, Hiroshi FUNAKUBO, Ken NISHIDA

    Advanced Structured Materials   65   65 - 75   2017.3

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  • Effect of in-plane tensile strain in (100)/(001)-oriented epitaxial PbTiO3 films on their phase transition temperature and tetragonal distortion Reviewed

    Takaaki Nakashima, Daichi Ichinose, Yoshitaka Ehara, Takao Shimizu, Takeshi Kobayashi, Tomoaki Yamada, Hiroshi Funakubo

    APPLIED PHYSICS LETTERS   110 ( 12 )   2017.3

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    DOI: 10.1063/1.4978649

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  • Inverse-magnetostriction-induced switching current reduction of STT-MTJs and its application for low-voltage MRAM Reviewed

    Yota Takamura, Yusuke Shuto, Shu'uichiro Yamamoto, Hiroshi Funakubo, Minoru Kuribayashi Kurosawa, Shigeki Nakagawa, Satoshi Sugahara

    SOLID-STATE ELECTRONICS   128 ( no. Supplement C )   194 - 199   2017.2

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    DOI: 10.1016/j.sse.2016.10.007

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  • Orientation change with substrate type and composition in (100)/(001)-oriented epitaxial tetragonal Pb(ZrxTi1-x)O-3 films Reviewed

    Daichi Ichinose, Takaaki Nakashima, Yoshitaka Ehara, Takahiro Oikawa, Takao Shimizu, Osami Sakata, Tomoaki Yamada, Hiroshi Funakubo

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   125 ( 6 )   458 - 462   2017

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    DOI: 10.2109/jcersj2.16326

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  • Indirect measurements of electrocaloric effect in ferroelectric thin films by positive-up-negative-down method Reviewed

    Shogo Matsuo, Tomoaki Yamada, Takafumi Kamo, Hiroshi Funakubo, Masahito Yoshino, Takanori Nagasaki

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   125 ( 6 )   441 - 444   2017

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    DOI: 10.2109/jcersj2.16283

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  • Theoretical calculations of ferroelectric phase transition of thin film HfO2

    Moriwake Hiroki, Konishi Ayako, Togo Atsushi, Shimizu Takao, Funakubo Hiroshi

    Meeting Abstracts of the Physical Society of Japan   72   2282 - 2282   2017

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    DOI: 10.11316/jpsgaiyo.72.2.0_2282

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  • Epitaxial growth of YO1.5 doped HfO2 films on (100) YSZ substrates with various concentrations Reviewed

    Takao Shimizu, Kiliha Katayama, Hiroshi Funakubo

    FERROELECTRICS   512 ( 1 )   105 - 110   2017

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    DOI: 10.1080/00150193.2017.1349994

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  • Evaluation of oxygen vacancies in ZnO single crystals and powders by micro-Raman spectroscopy Reviewed

    Hiroaki Fukushima, Hiroshi Uchida, Hiroshi Funakubo, Takashi Katoda, Ken Nishida

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   125 ( 6 )   445 - 448   2017

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    DOI: 10.2109/jcersj2.16262

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  • Synthesis and Photocatalytic Properties of Iron Disilicide/SiC Composite Powder Reviewed

    Kensuke Akiyama, Yuu Motoizumi, Tetsuya Okuda, Hiroshi Funakubo, Hiroshi Irie, Yoshihisa Matsumoto

    MRS Advances   2 ( 8 )   471 - 476   2017

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    DOI: 10.1557/adv.2017.221

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  • Fabrication of Tetragonal Pb(Zr,Ti)O-3 Nanorods by Focused Ion Beam and Characterization of the Domain Structure Reviewed

    Daisuke Ito, Tomoaki Yamada, Osami Sakata, Junki Kuroishi, Takahiro Namazu, Hiroshi Funakubo, Masahito Yoshino, Takanori Nagasaki

    IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL   63 ( 10 )   1642 - 1646   2016.10

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    DOI: 10.1109/TUFFC.2016.2569625

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  • Angular dependence of Raman spectrum for Pb(Zr,Ti)O-3 epitaxial films Reviewed

    Hiroaki Fukushima, Daichi Ichinose, Hiroshi Funakubo, Hiroshi Uchida, Hiromi Shima, Ken Nishida

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 10 )   2016.10

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    DOI: 10.7567/JJAP.55.10TC07

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  • Composition dependences of crystal structure and electrical properties of epitaxial Pb(Zr,Ti)O-3 films grown on Si and SrTiO3 substrates Reviewed

    Shoji Okamoto, Satoshi Okamoto, Shintaro Yokoyama, Kensuke Akiyama, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 10 )   2016.10

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    DOI: 10.7567/JJAP.55.10TA08

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  • Fabrication of (110)-one-axis-oriented perovskite-type oxide thin films and their application to buffer layer Reviewed

    Tomoya Sato, Daichi Ichinose, Junichi Kimura, Takaaki Inoue, Takanori Mimura, Hiroshi Funakubo, Kiyoshi Uchiyama

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 10 )   2016.10

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    DOI: 10.7567/JJAP.55.10TA19

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  • Fabrication and characterization of (111)-epitaxial Pb(Zr0.35Ti0.65)O3/Pb(Zr0.65Ti0.35)O3 artificial superlattice thin films Reviewed

    Tomoaki Yamada, Youhei Ebihara, Takanori Kiguchi, Osami Sakata, Hitoshi Morioka, Takao Shimizu, Hiroshi Funakubo, Toyohiko J. Konno, Masahito Yoshino, Takanori Nagasaki

    Japanese Journal of Applied Physics   55 ( 10 )   10TA20-1 - 10TA20-5   2016.9

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    Artificial superlattice thin films consisting of two different compositions of Pb(Zr,Ti)O<inf>3</inf>(PZT), which are in tetragonal and rhombohedral phases at room temperature in the bulk state, were grown on (111)<inf>c</inf>SrRuO<inf>3</inf>/(111)SrTiO<inf>3</inf>by pulsed laser deposition. Fairly perfect periodicity with sharp interfaces was observed by X-ray diffraction and scanning transmission electron microscopy. It was found that the film with each layer of 5 nm thickness had a single-domain structure for both PZT layers, which would arise from the strong mechanical and electrical coupling between PZT layers. The fabricated superlattice thin films showed saturated P–E hysteresis curves. Larger electromechanical response was observed in the films with smaller layer thickness.

    DOI: 10.7567/JJAP.55.10TA20

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  • Orientation control of barium titanate films using metal oxide nanosheet layer Reviewed

    Hiroshi Uchida, Tomotake Oi, Keito Noguchi, Shota Moki, Jin Woon Kim, Hiromi Shima, Ken Nishida, Takanori Kiguchi, Akihiko Akama, Toyohiko J. Konno, Hiroshi Funakubo

    Japanese Journal of Applied Physics   55 ( 10 )   10TA15-1 - 10TA15-7   2016.9

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    In the present work, we aim to achieve the preferred crystal orientation of chemical solution deposition (CSD)-derived BaTiO<inf>3</inf>films on ubiquitous Si wafers with the assistance of Ca<inf>2</inf>Nb<inf>3</inf>O<inf>10</inf>nanosheet (ns-CN) template layers. The ns-CN on platinized Si (Pt/Si) substrates aligned the BaTiO<inf>3</inf>(100) plane to the substrate surface, because of the favorable lattice matching of the ns-CN (001) plane. The CSD process in air required a high crystallization temperature of 900 °C for the preferred crystal orientation of BaTiO<inf>3</inf>(100) because of the BaCO<inf>3</inf>byproduct generated during the combustion reaction of the precursor gel. The processing in vacuum to remove CO<inf>2</inf>species enhanced the crystal orientation even at the crystallization temperature of 800 °C, although it can generate oxygen vacancies ([Formula: see text]) that cause distorted polarization behavior under an applied field higher than approximately 150 kV/cm. The relative dielectric constant (ε<inf>r</inf>) of the (100)-oriented BaTiO<inf>3</inf>film on the ns-CN-supported Pt/Si substrate (ns-CN/Pt/Si) was generally larger than that of the randomly oriented film on Pt/Si, depending on the degree of crystal orientation.

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  • Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for Reviewed

    K. Katayama, T. Shimizu, O. Sakata, T. Shiraishi, S. Nakamura, T. Kiguchi, A. Akama, T. J. Konno, H. Uchida, H. Funakubo

    Appl. Phys. Lett.   109 ( 109 )   112901-1 - 112901-5   2016.9

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    DOI: 10.1063/1.4962431

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  • The demonstration of significant ferroelectricity in epitaxial Y-doped HfO2 film Reviewed International journal

    T. Shimizu, K. Katayama, T. Kiguchi, A. Akama, T.J Konno, O. Sakata, H. Funakubo

    Scientific Report   6   32931-1 - 32931-8   2016.9

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    DOI: 10.1038/srep32931

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  • Formation of (111) orientation-controlled ferroelectric orthorhombic HfO2 thin films from solid phase via annealing Reviewed

    Takanori Mimura, Kiliha Katayama, Takao Shimizu, Hiroshi Uchida, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Osami Sakata, Hiroshi Funakubo

    Applied Physics Letters   109 ( 5 )   052903-1 - 052903-4   2016.8

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    DOI: 10.1063/1.4960461

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  • Enhancement of Dielectric Properties in Epitaxial Bismuth Ferrite-Bismuth Samarium Ferrite Superlattices Reviewed

    Ronald Maran, Shintaro Yasui, Eugene Eliseev, Anna Morozovska, Hiroshi Funakubo, Ichiro Takeuchi, Nagarajan Valanoor

    ADVANCED ELECTRONIC MATERIALS   2 ( 8 )   2016.8

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    DOI: 10.1002/aelm.201600170

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  • Increased expression of the adipocytokine omentin in the epicardial adipose tissue of coronary artery disease patients. International journal

    Ken Harada, Rei Shibata, Noriyuki Ouchi, Yoshiyuki Tokuda, Hiroshi Funakubo, Mayu Suzuki, Takashi Kataoka, Tomoyuki Nagao, Satoshi Okumura, Norihiro Shinoda, Bunichi Kato, Shinichi Sakai, Masataka Kato, Nobuyuki Marui, Hideki Ishii, Tetsuya Amano, Tatsuaki Matsubara, Toyoaki Murohara

    Atherosclerosis   251   299 - 304   2016.8

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    BACKGROUND AND AIMS: Omentin, an adipocytokine secreted by visceral adipose tissue, protects against obesity-linked cardiovascular complications. However, little is known about its role in epicardial adipose tissue (EAT) and coronary artery disease (CAD). We investigated the expression of omentin in EAT from CAD subjects. METHODS: EAT, subcutaneous adipose tissue (SCAT), and plasma samples were collected from CAD (n = 15; 23.3 ± 3.1 kg/m(2)) and non-CAD patients (n = 10; 20.8 ± 3.9 kg/m(2)). Omentin mRNA expression was measured using real-time PCR, while plasma concentrations were measured using an ELISA. EAT volume was determined with 64-slice computed tomography. RESULTS: Omentin expression in EAT and EAT volume were higher in CAD patients compared with controls (2.49 ± 2.6 vs. 0.85 ± 0.3, p = 0.002 and 113 ± 58 ml vs. 92.4 ± 30 ml, p = 0.045, respectively). Omentin expression in SCAT was similar between CAD and control patients (1.37 ± 0.84 vs. 1.07 ± 0.55, p = 0.267). Plasma omentin levels were lower in CAD patients compared with controls (343 ± 158 ng/ml vs. 751 ± 579 ng/ml, p = 0.025), and were negatively associated with the expression of omentin in EAT, in patients with CAD (β = -0.78, p = 0.049). On the other hand, there was no association between omentin in EAT and clinical variables in patients with non-CAD. CONCLUSIONS: Omentin expression increases in the EAT of non-obese CAD patients, despite a decrease in plasma levels, suggesting that omentin may play a role in the pathogenesis of CAD.

    DOI: 10.1016/j.atherosclerosis.2016.07.003

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  • Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films Reviewed

    Takahisa Shiraishi, Kiliha Katayama, Tatsuhiko Yokouchi, Takao Shimizu, Takahiro Oikawa, Osami Sakata, Hiroshi Uchida, Yasuhiko Imai, Takanori Kiguchi, Toyohiko J. Konno, Hiroshi Funakubo

    Appl. Phys. Lett.   108 ( 26 )   262904-1 - 262904-5   2016.6

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    DOI: 10.1063/1.4954942

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  • Metal-organic chemical vapor deposition growth of beta-FeSi2/Si composite powder via vapor-liquid-solid method and its photocatalytic properties Reviewed

    Kensuke Akiyama, Yuu Motoizumi, Hiroshi Funakubo, Hiroshi Irie, Yoshihisa Matsumoto

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 6 )   2016.6

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    DOI: 10.7567/JJAP.55.06HC02

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  • Effects of substrate surface composition and deposition temperature on deposition of flat and continuous Ru thin films Reviewed

    Hirokazu Chiba, Masaki Hirano, Kazuhisa Kawano, Noriaki Oshima, Hiroshi Funakubo

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   124 ( 6 )   694 - 696   2016.6

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    DOI: 10.2109/jcersj2.16024

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  • Dielectric properties of BaTiO3-Bi(Mg1/2Ti1/2)O-3 films with preferential crystal orientation Reviewed

    Shota Moki, Junichi Kimura, Hiroshi Funakubo, Hiroshi Uchida

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   124 ( 6 )   648 - 652   2016.6

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    DOI: 10.2109/jcersj2.15321

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  • Large irreversible non-180° domain switching after poling treatment in Pb(Zr, Ti)O3 films Reviewed

    Y. Ehara, S. Yasui, T. Oikawa, T. Shiraishi, N. Oshima, T. Yamada, Y. Imai, O. Sakata, H. Funakubo

    Appl. Phys. Lett.   108 ( 21 )   212901-1 - 212901-5   2016.5

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    DOI: 10.1063/1.4951672

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  • Low temperature MOCVD of Ta2O5 dielectric thin films from Ta[NC(CH3)(3)][OC(CH3)(3)](3) and O-2 Reviewed

    Hirokazu Chiba, Ken-ichi Tada, Taishi Furukawa, Toshiki Yamamoto, Tadahiro Yotsuya, Noriaki Oshima, Hiroshi Funakubo

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   124 ( 5 )   510 - 514   2016.5

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    DOI: 10.2109/jcersj2.15245

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  • Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films Reviewed

    Kiliha Katayama, Takao Shimizu, Osami Sakata, Takahisa Shiraishi, Shogo Nakamura, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Hiroshi Uchida, Hiroshi Funakubo

    Journal of Applied Physics   119   134101-1 - 134101-7   2016.4

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    DOI: 10.1063/1.4945029

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  • Crystal Structure and Compositional Analysis of Epitaxial (K0.56Na0.44)NbO3 Films Prepared by Hydrothermal Method Reviewed

    Takahisa Shiraishi, Hiro Einishi, Takao Shimizu, Hiroshi Funakubo, Minoru Kurosawa, Hiroshi Uchida, Takanori Kiguchi, Toyohiko J. Konno, Nobuhiro Kumada

    Journal of Material Research   31 ( 6 )   693 - 701   2016.3

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    DOI: 10.1557/jmr.2016.56

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  • Thermally stable dielectric responses in uniaxially (001)-oriented CaBi4Ti4O15 nanofilms grown on a Ca2Nb3O10- nanosheet seed layer Reviewed International journal

    Junichi Kimura, Itaru Takuwa, Masaaki Matsushima, Takao Shimizu, Hiroshi Uchida, Takanori Kiguchi, Takahisa Shiraishi, Toyohiko J. Konno, Tatsuo Shibata, Minoru Osada, Takayoshi Sasaki, Hiroshi Funakubo

    Scientific Reports   6   20713-1 - 20713-9   2016.2

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    To realize a high-temperature capacitor, uniaxially (001)-oriented CaBi4Ti4O15 films with various film thicknesses were prepared on (100)cSrRuO3/Ca2Nb3O10(-) nanosheet/glass substrates. As the film thickness decreases to 50 nm, the out-of-plane lattice parameters decrease while the in-plane lattice ones increase due to the in-plane tensile strain. However, the relative dielectric constant (εr) at room temperature exhibits a negligible degradation as the film thickness decreases to 50 nm, suggesting that εr of (001)-oriented CaBi4Ti4O15 is less sensitive to the residual strain. The capacitance density increases monotonously with decreasing film thickness, reaching a value of 4.5 μF/cm(2) for a 50-nm-thick nanofilm, and is stable against temperature changes from room temperature to 400 °C irrespective of film thickness. This behaviour differs from that of the widely investigated perovskite-structured dielectrics. These results show that (001)-oriented CaBi4Ti4O15 films derived using Ca2Nb3O10(-) nanosheets as seed layers can be made candidates for high-temperature capacitor applications by a small change in the dielectric properties against film thickness and temperature variations.

    DOI: 10.1038/srep20713

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  • Fabrication of highly (110)-oriented BaCeO3-based proton-conductive oxide thin films by RF magnetron sputtering method Reviewed

    Tomoya Sato, Takaaki Inoue, Daichi Ichinose, Hiroshi Funakubo, Kiyoshi Uchiyama

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 2 )   2016.2

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    DOI: 10.7567/JJAP.55.02BC19

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  • Fabrication of highly (110)-oriented BaCeO

    Sato Tomoya, Inoue Takaaki, Ichinose Daichi, Funakubo Hiroshi, Uchiyama Kiyoshi

    Jpn. J. Appl. Phys.   55 ( 2 )   02BC19   2016.1

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    A proton-conductive BaCe<inf>0.9</inf>Y<inf>0.1</inf>O<inf>3−δ</inf>(BCYO) thin-film, one of the candidates for the electrolyte of intermediate-temperature solid oxide fuel cells (IT-SOFCs), was deposited on (111)Pt/TiO<inf>2</inf>/SiO<inf>2</inf>/(100)Si substrate by the RF magnetron sputtering method. The sputtering conditions, i.e., deposition temperature, pressure, and sputtering gases, were examined to improve the crystallinity of the films. The BCYO films deposited at more than 500 °C were well crystallized and showed only 110 diffraction. The addition of O<inf>2</inf>into the sputtering gas causes adverse results of lower crystallinity and lower deposition rates. A wide-range XRD reciprocal space mapping also revealed that the (110)-oriented BCYO films can be obtained on (111)Pt/TiO<inf>2</inf>/SiO<inf>2</inf>/(100)Si substrates without the need to use any buffer layers. We consider that this BCYO film possibly shows high proton conductivity and may be a suitable material for the SOFC electrolyte because of its high crystallinity.

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  • Simultaneous achievement of high dielectric constant and low temperature dependence of capacitance in (111)-oriented BaTiO3-Bi(Mg0.5Ti0.5)O-3-BiFeO3 solid solution thin films Reviewed

    Junichi Kimura, Mohamed-Tahar Chentir, Takao Shimizu, Hiroshi Uchida, Hiroshi Funakubo

    AIP ADVANCES   6 ( 1 )   015304   2016.1

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    DOI: 10.1063/1.4939818

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  • Development of a novel cell structure for low-temperature SOFC using porous stainless steel support combined with hydrogen permeable Pd layer and thin film proton conductor Reviewed

    Tetsuro Kariya, Hiroki Tanaka, Tomoki Hirono, Tetsuji Kuse, Katsu Yanagimoto, Kiyoshi Uchiyama, Mitsunori Henmi, Mitsutaka Hirose, Isao Kimura, Koukou Suu, Hiroshi Funakubo

    JOURNAL OF ALLOYS AND COMPOUNDS   654   171 - 175   2016.1

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    DOI: 10.1016/j.jallcom.2015.09.109

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  • Epitaxial Growth and Photoluminescence Properties of beta-FeSi2 Grains Using Liquid Phase Obtained by Au-Si Eutectic Reaction Reviewed

    Kensuke Akiyama, Hiroshi Funakubo

    LIGHT-EMITTING DIODES: MATERIALS, DEVICES, AND APPLICATIONS FOR SOLID STATE LIGHTING XX   9768   2016

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    DOI: 10.1117/12.2212057

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  • High temperature stability of the dielectric and insulating properties of Ca(Ti, Zr)SiO5 ceramics Reviewed

    Kimura Junichi, Taniguchi Hiroki, Iijima Takashi, Shimizu Takao, Yasui Shintaro, Itoh Mitsuru, Funakubo Hiroshi

    Applied Physics Letters   108 ( 6 )   062902   2016

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    DOI: 10.1063/1.4941803

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  • Preparation of Ca-Si Films on (001) Al2O3 Substrates by an RF Magnetron Sputtering Method and Their Electrical Properties Reviewed

    Uehara Mutsuo, Akiyama Kensuke, Shimizu Takao, Matsushima Masaaki, Uchida Hiroshi, Kimura Yoshisato, Funakubo Hiroshi

    Journal of Electronic Materials   45 ( 6 )   3121 - 3126   2016

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    DOI: 10.1007/s11664-016-4404-x

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  • Growth of epitaxial tetragonal (Bi, K)TiO3 films and their ferroelectric and piezoelectric properties Reviewed

    Nemoto Yuichi, Ichinose Daichi, Shimizu Takao, Uchida Hiroshi, Yamaoka Wakiko, Sato Yusuke, Funakubo Hiroshi

    Japanese Journal of Applied Physics   55 ( 10 )   10TA13   2016

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  • Growth of {110}-one-axis-oriented perovskite-type oxide films using self-aligned epitaxial (101)PdO//(111) Pd double layers Reviewed

    Tanaka Hiroki, Kariya Tetsuro, Shimizu Takao, Uchiyama Kiyoshi, Funakubo Hiroshi

    Thin Solid Films   599   133 - 137   2016

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    DOI: 10.1016/j.tsf.2015.12.067

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  • Transport properties and c/a ratio of V<inf>2</inf>O<inf>3</inf> thin films grown on C- and R-plane sapphire substrates by pulsed laser deposition Reviewed

    Joe Sakai, Patrice Limelette, Hiroshi Funakubo

    Applied Physics Letters   107 ( 24 )   2015.12

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    DOI: 10.1063/1.4937456

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  • Ba(ZrxTi1-x)O-3 thin films for tunable microwave applications Reviewed

    Jinwoong Kim, Shima Hiromi, Yamamoto Takashi, Yasui Shintaro, Funakubo Hiroshi, Yamada Tomoaki, Nishida Ken

    Ceramics International   41 ( No. 41, Supplement 1 )   S323 - S330   2015.11

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    DOI: 10.1016/j.ceramint.2015.03.184

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  • Fabrication and characterization of (110)-oriented (Ba-0.5,Sr-0.5)TiO3 thin films using PdO//Pd buffer layer Reviewed

    Oshima Naoya, Uchiyama Kiyoshi, Ehara Yoshitaka, Oikawa Takahiro, Tanaka Hiroki, Sato Tomoya, Uchida Hiroshi, Yamada Tomoaki, Funakubo Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 10 )   10NA15 - 10NA15   2015.10

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  • Domain structure of tetragonal Pb(Zr,T)O3 nanorods and its size dependence Reviewed

    T. Yamada, D. Ito, O. Sakata, J. Kuroishi, T. Namazu, Y. Imai, T. Shiraishi, T. Shimizu, H. Funakubo, M. Yoshino, T. Nagasaki

    Jpn. J. Appl. Phys.   54 ( 10 )   10NA07-1 - 10NA07-4   2015.9

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  • Orientation and film thickness dependencies of (100)- and (111)-oriented epitaxial Pb(Mg1/3Nb2/3)O3 films grown by metal organic chemical vapor deposition Reviewed

    Hiroshi Funakubo, Satoshi Okamaoto, Shintaro Yokoyama, Shoji Okamoto, Junichi Kimura, Hiroshi Uchida

    Journal of Materiomics   1 ( 3 )   188 - 195   2015.9

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    DOI: 10.1016/j.jmat.2015.07.004

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  • Stabilizing the ferroelectric phase in doped hafnium oxide Reviewed

    M. Hoffmann, U. Schroeder, T. Schenk, T. Shimizu, H. Funakubo, O. Sakata, D. Pohl, M. Drescher, C. Adelmann, R. Materlik, A. Kersch, T. Mikolajick

    JOURNAL OF APPLIED PHYSICS   118 ( 7 )   072006-1 - 072006-9   2015.8

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    The ferroelectric properties and crystal structure of doped HfO2 thin films were investigated for different thicknesses, electrode materials and annealing conditions. Metal-ferroelectric-metal capacitors containing Gd:HfO2 showed no reduction of the polarization within the studied thickness range, in contrast to hafnia films with other dopants. A qualitative model describing the influence of basic process parameters on the crystal structure of HfO2 was proposed. The influence of different structural parameters on the field cycling behavior was examined. This revealed the wake-up effect in doped HfO2 to be dominated by interface induced effects, rather than a field induced phase transition.

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  • Negligible substrate clamping effect on piezoelectric response in (111)-epitaxial tetragonal Pb(Zr, Ti)O3 films Reviewed

    Tomoaki Yamada, Jun Yasumoto, Daisuke Ito, Osami Sakata, Yasuhiko Imai, Takanori Kiguchi, Takahisa Shiraishi, Takao Shimizu, Hiroshi Funakubo, Masahito Yoshino, Takanori Nagasaki

    Journal of Applied Physics   118 ( 7 )   072012-1 - 072012-6   2015.8

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  • Vibration-energy-harvesting properties of hydrothermally synthesized (K,Na)NbO3 films deposited on flexible metal foil substrates Reviewed

    T. Shiraishi, N. Kaneko, M. Kurosawa, H. Uchida, Y. Suzuki, T. Kobayashi, H. Funakubo

    Jpn. J. Appl. Phys.   54 ( 10 )   10ND06-1 - 10ND06-6   2015.8

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    DOI: 10.7567/JJAP.54.10ND06

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  • Growth of epitaxial orthorhombic YO1.5 -substituted HfO2 thin film Reviewed

    Takao Shimizu, Kiliha Katayama, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Hiroshi Funakubo

    Applied Physics Letter   107   032910-1 - 032910-5   2015.7

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    DOI: 10.1063/1.4927450

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  • Polar-axis-oriented crystal growth of tetragonal PZT films on stainless steel substrate using pseudo-perovskite nanosheet buffer layer Reviewed

    Y. Minemura, K. Nagasaka, J.W. Kim, H. Shima, K. Nishida, T. Kiguchi, T.J. Konno, N. Oshima, H. Funakubo, H. Uchida

    AIP ADVANCES   5 ( 7 )   077139-1 - 077139-8   2015.7

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    DOI: 10.1063/1.4927208

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  • Orientation control of epitaxial tetragonal Pb(ZrxTi1−x)O3 thin films grown on (100)KTaO3 substrates by tuning the Zr/(Zr + Ti) ratio Reviewed

    Daichi Ichinose, Takaaki Nakashima, Yoshitaka Ehara, Takahiro Oikawa, Takao Shimizu, Osami Sakata, Tomoaki Yamada, Hiroshi Funakubo

    APPLIED PHYSICS LETTERS   107 ( 2 )   022902-1 - 022902-5   2015.7

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    DOI: 10.1063/1.4926963

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  • Structural characterization of epitaxial Mg2Si films grown on MgO and MgO-buffered Al2O3 substrates Reviewed

    Atsuo Katagiri, Shota Ogawa, Takahiro Oikawa, Masaaki Matsushima, Kensuke Akiyama, P. S. Sankara Rama Krishnan, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 7 )   2015.7

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  • Phase transitions associated with competing order parameters in compressively strainedSrTiO3thin films Reviewed

    Tomoaki Yamada, Benjamin Wylie-van Eerd, Osami Sakata, Alexander K. Tagantsev, Hitoshi Morioka, Yoshitaka Ehara, Shintaro Yasui, Hiroshi Funakubo, Takanori Nagasaki, H. J. Trodahl

    PHYSICAL REVIEW B   91 ( 21 )   214101-1 - 214101-10   2015.6

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    DOI: 10.1103/physrevb.91.214101

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  • Fabrication of tetragonal Pb(Zr,T)O3 nanorods by focused ion beam and characterization the domain structure Reviewed

    D. Ito, T. Yamada, O. Sakata, J. Kuroishi, T. Namazu, T. Shiraishi, T. Shimizu, H. Funakubo, M. Yoshino, T. Nagasaki

    Proc. IEEE-ISAF/ISIF/PFM-2015   175 - 177   2015.5

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  • Effects of porous flow field type separators using sintered Ni-based alloy powders on interfacial contact resistances and fuel cell performances

    Tetsuro Kariya, Katsu Yanagimoto, Hiroshi Funakubo, Toshio Shudo

    Energy   Vol. 87   2015.5

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    DOI: 10.1016/j.energy.2015.04.060

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  • Fabrication of (100)-oriented Mn-doped bismuth ferrite films on silicon and stainless steel substrates using calcium niobate nanosheets Reviewed

    K. Nagasaka, N Oshima, J.W. Kim, H. Shima, A. Akama, T. Kiguchi, K. Nishida, T.J. Konno, H. Funakubo, H Uchida

    Journal of the Ceramics Society Japan   123 ( 5 )   322 - 328   2015.5

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  • The effect of electrolyte concentration on silicon nanoparticles prepared by laser ablation in liquid Reviewed

    Pattarin Chewchinda, Yoshitaka Kitamoto, Hiroshi Funakubo, Michikazu Hara, Osamu Odawara, Hiroyuki Wada

    2015.5

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  • Epitaxial PbZrxTi1-xO3 Ferroelectric Bilayers with Giant Electromechanical Properties Reviewed

    H. H. Huang, Q. Zhang, E. Huang, R. Maran, O. Sakata, Y. Ehara, T. Shiraishi, H. Funakubo, P. Munroe, N. Valanoor

    Adv. Mater. Interfaces   2 ( 8 )   1 - 12   2015.4

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    DOI: 10.1002/admi.201500075

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  • Contribution of oxygen vacancies to the ferroelectric behavior of Hf0.5Zr0.5O2 thin films Reviewed

    T. Shimizu, T Yokouchi, T. Oikawa, T. Shiraishi, T. Kiguchi, A. Akama, T.J. Konno, A. Gruverman, H. Funakubo

    Applied Physics Letter   106   112904-1 - 112904-5   2015.4

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    DOI: 10.1063/1.4915336

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  • Growth and evaluation of epitaxial BaTiO3 thin films of less than 100 nm thickness by metal-organic chemical vapor deposition Reviewed

    Kenji Yoshiizumi, Takeshi Tai, Masamichi Nishide, Hiromi Shima, Hiroshi Funakubo, Ken Nishida, Takashi Yamamoto

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 3 )   2015.3

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    DOI: 10.7567/JJAP.54.035501

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  • Pulse poling within 1 second enhance the piezoelectric property of PZT thin films

    T. Kobayashi, Y. Suzuki, N. Makimoto, H. Funakubo, R. Maeda

    Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)   2015- ( February )   1098 - 1101   2015.2

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    DOI: 10.1109/MEMSYS.2015.7051155

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  • Growth and evaluation of epitaxial BaTiO

    Yoshiizumi Kenji, Tai Takeshi, Nishide Masamichi, Shima Hiromi, Funakubo Hiroshi, Nishida Ken, Yamamoto Takashi

    Jpn. J. Appl. Phys.   54 ( 3 )   35501 - 35501   2015.1

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    Epitaxial BaTiO<inf>3</inf>(BTO) thin films of less than 100 nm thickness were grown on Pt(001)/MgO(001) substrates at growth temperatures of 500–700 °C with a low deposition rate of about 25 nm/h by metal–organic chemical vapor deposition (MOCVD). The BaTiO<inf>3</inf>thin films were epitaxialy grown with (001) orientation. These films show quadrangular grains and a dense cross-sectional structure. The relative permittivities of these films grown at 500, 600, and 700 °C with thicknesses of 62, 65, and 82 nm were 338, 455, and 566 at 1 kHz, respectively. These relative permittivities were higher than those of BTO films prepared by other methods and BTO ceramics with thicknesses less than 100 nm.

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  • 液中レーザーアブレーションによるシリコンナノ粒子の作製と太陽電池への応用 Reviewed

    小林 宏輝, Pattarin Chewchinda, 大谷 弘之, 舟窪 浩, 小田原 修, 和田 裕之

    2015.1

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  • Chemical fluid deposition of Hf-Zr-O-based thin films using supercritical carbon dioxide fluid

    Shiokawa, M., Izaki, K., HIROSHI FUNAKUBO, Uchida, H.

    Materials Research Society Symposium Proceedings   Vol. 1729   2015

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    DOI: 10.1557/opl.2015.95

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  • Control of iron disilicide crystal structure by using liquid phase obtained by Au-Si eutectic reaction Reviewed

    Kensuke Akiyama, Yuu Motoizumi, Hiroshi Funakubo

    Materials Research Society Symposium Proceedings   1760   139 - 144   2015

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    DOI: 10.1557/opl.2015.54

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  • Evaluation of Oxygen Vacancy in ZnO using Raman Spectroscopy Reviewed

    Hiroaki Fukushima, Tomomi Kozu, Hiromi Shima, Hiroshi Funakubo, Hiroshi Uchida, Takashi Katoda, Ken Nishida

    2015 JOINT IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRIC, INTERNATIONAL SYMPOSIUM ON INTEGRATED FUNCTIONALITIES AND PIEZOELECTRIC FORCE MICROSCOPY WORKSHOP (ISAF/ISIF/PFM)   28 - 31   2015

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  • Epitaxial Growth of Luminescent beta-FeSi2 on modified Si(111) Surface by Silver Reviewed

    Kensuke Akiyama, Hiroshi Funakubo

    Smart Photonic and Optoelectronic Integrated Circuits XVII   9366   2015

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    DOI: 10.1117/12.2079405

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  • Intermediate-temperature operation of solid oxide fuel cells (IT-SOFCs) with thin film proton conductive electrolyte Reviewed

    T. Kariya, K. Uchiyama, H. Tanaka, T. Hirono, T. Kuse, K. Yanagimoto, M. Henmi, M. Hirose, I. Kimura, K. Suu, H. Funakubo

    15TH INTERNATIONAL CONFERENCE ON MICRO AND NANOTECHNOLOGY FOR POWER GENERATION AND ENERGY CONVERSION APPLICATIONS (POWERMEMS 2015)   660   2015

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    DOI: 10.1088/1742-6596/660/1/012057

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  • Photocatalytic hydrogen evolution over beta-iron silicide under infrared-light irradiation Reviewed International journal

    Masaharu Yoshimizu, Ryoya Kobayashi, Makoto Saegusa, Toshihiro Takashima, Hiroshi Funakubo, Kensuke Akiyama, Yoshihisa Matsumoto, Hiroshi Irie

    CHEMICAL COMMUNICATIONS   51 ( 14 )   2818 - 2820   2015

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    DOI: 10.1039/c4cc08093a

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  • Reactive Sputtering Process and Properties of Ba(ZrxTi1-x)O-3 Films for High Frequency Applications Reviewed

    Kim J. W, Shima H, Yamamoto T, Yasui S, Funakubo H, Yamada T, Nishida K, IEEE

    2015 Joint Ieee International Symposium on the Applications of Ferroelectric, International Symposium on Integrated Functionalities and Piezoelectric Force Microscopy Workshop (Isaf/isif/pfm)   48 - 51   2015

  • High power piezoelectric characteristics of KNbO3 thick films by hydrothermal method Reviewed

    Mutsuo Ishikawa, Yosuke Uchida, Nobuaki Kosuge, Hiroshi Funakubo, Minoru Kurosawa

    2015 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IUS)   2015

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  • Effect of incubation time on preparation of continuous and flat Ru films Reviewed

    H. Funakubo, T. Shiraishi, T. Oikawa, M. Hirano, H. Chiba, K. Kawano

    J. Vau. Sci. Technol. A   33 ( 1 )   01A149-1 - 01A149-6   2014.12

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    DOI: 10.1116/1.4904494

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  • Interface control of a morphotropic phase boundary in epitaxial samarium modified bismuth ferrite superlattices Reviewed

    Ronald Maran, Shintaro Yasui, Eugene A. Eliseev, Maya D. Glinchuk, Anna N. Morozovska, Hiroshi Funakubo, Ichiro Takeuchi, Valanoor Nagarajan

    PHYSICAL REVIEW B   90 ( 24 )   2014.12

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    DOI: 10.1103/PhysRevB.90.245131

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  • Laser Wavelength Effect on Size and Morphology of Silicon Nanoparticles Prepared by Laser Ablation in Liquid (vol 52, 025001, 2013) Reviewed

    Chewchinda Pattarin, Tsuge Takeharu, Funakubo Hiroshi, Odawara Osamu, Wada Hiroyuki

    Japanese Journal of Applied Physics   53 ( 3 )   p. 54 - 59   2014.12

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  • Impact of pulse poling on static and dynamic ferroelastic-domain contributions in tetragonal Pb( Ti, Zr)O-3 films determined by in-situ x-ray diffraction analysis Reviewed

    Mitsumasa Nakajima, Ayumi Wada, Tomoaki Yamada, Yoshitaka Ehara, Takeshi Kobayashi, Hiroshi Funakubo

    JOURNAL OF APPLIED PHYSICS   116 ( 19 )   2014.11

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  • Influence of pulse poling on the piezoelectric property of Pb(Zr-0.52, Ti-0.48)O-3 thin films

    Takeshi Kobayashi, Yasuhiro Suzuki, Natsumi Makimoto, Hiroshi Funakubo, Ryutaro Maeda

    AIP ADVANCES   4 ( 11 )   2014.11

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    DOI: 10.1063/1.4901912

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  • Study on Effect of Heat Treatment Condition of MOCVD deposited Ferroelectric Hf0.5Zr0.5O2 Thin Film on Ir Electrode Reviewed

    T. Shimizu, T. Yokouchi, T. Shiraishi, T. Oikawa, P. S. Sankara, Rama Krishnan, H. Funakubo

    Jpn. J. Appl. Phys.   53 ( 9 )   09PA04-1 - 09PA04-6   2014.9

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  • Lead- and alkali-metal-free BaTiO

    Kimura Junichi, Mohamed-Tahar Chentir, Shimizu Takao, Uchida Hiroshi, Funakubo Hiroshi

    Jpn. J. Appl. Phys.   53 ( 9 )   09PA12   2014.9

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    Lead- and alkali-metal-free BaTiO<inf>3</inf>–Bi(Mg<inf>0.5</inf>Ti<inf>0.5</inf>)O<inf>3</inf>–BiFeO<inf>3</inf>solid-solution thin films were prepared on (111)<inf>c</inf>SrRuO<inf>3</inf>/(111)Pt/TiO<inf>2</inf>/SiO<inf>2</inf>/(100)Si substrates by chemical solution deposition (CSD) and their crystal structure and dielectric properties were investigated. The lattice spacing as a function of z/(x + z) in xBaTiO<inf>3</inf>–0.1Bi(Mg<inf>0.5</inf>Ti<inf>0.5</inf>)O<inf>3</inf>–zBiFeO<inf>3</inf>indicated the existence of phase boundaries (pseudocubic/rhombohedral) in the range of z/(x + z) = 0.33–0.56, where the relatively high relative dielectric constant, ε<inf>r</inf>, of above 800 was obtained. On the other hand, dielectric loss, tan δ, of below 0.2 was confirmed in the range z/(x + z) = 0–0.87, which rapidly increased toward z/(x + z) = 1.0. The relatively high ε<inf>r</inf>values of these films deposited on Si substrates by a solution-based process suggest that they can be used as alternative to Pb(Zr,Ti)O<inf>3</inf>, KNbO<inf>3</inf>, and (Bi<inf>1/2</inf>Na<inf>1/2</inf>)TiO<inf>3</inf>-based films.

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  • Ferroelectric and piezoelectric properties of KNbO3 films deposited on flexible organic substrate by hydrothermal method Reviewed

    T. Shiraishi, N. Kaneko, M. Ishikawa, M. Kurosawa, H. Uchida, H. Funakubo

    Jpn. J. Appl. Phys.   53 ( 9 )   09PA10-1 - 09PA10-4   2014.9

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  • Structural and dielectric properties of BaTiO

    Moki Shota, Kimura Junichi, Kaneko Noriyuki, Funakubo Hiroshi, Uchida Hiroshi

    Jpn. J. Appl. Phys.   53 ( 9 )   09PA11   2014.9

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    Thin films of the BaTiO<inf>3</inf>–Bi(Mg<inf>1/2</inf>Ti<inf>1/2</inf>)O<inf>3</inf>(BT–BMT) solid-solution system were fabricated with the aim of achieving a stable temperature coefficient of capacitance (TCC) favorable for high-temperature electronics. A single perovskite phase with pseudocubic symmetry was obtained for the films fabricated by chemical solution deposition on (111)Pt/TiO<inf>2</inf>/(100)Si substrates in the composition range of x = 0–0.80 for (1 − x)BT–xBMT. BMT added to the BaTiO<inf>3</inf>-based films enhanced the crystallinity of the perovskite phase and resulted in saturated P–E hysteresis behavior with remanent polarization of up to 13 µC/cm2. BMT addition led to gradual dielectric relaxation, which also resulted in stable TCC behavior with a relative dielectric constant of approximately 400 in the temperature range of RT − 400 °C, especially for the BT–BMT films with x = 0.20–0.40.

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  • Structural and dielectric properties of BaTiO3-Bi(Mg1/2Ti1/2)O-3 thin films fabricated by chemical solution deposition Reviewed

    Shota Moki, Junichi Kimura, Noriyuki Kaneko, Hiroshi Funakubo, Hiroshi Uchida

    JAPANESE JOURNAL OF APPLIED PHYSICS   53 ( 9 )   2014.9

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  • Lead- and alkali-metal-free BaTiO3-Bi(Mg0.5Ti0.5)O-3-BiFeO3 solid-solution thin films with high dielectric constant prepared on Si substrates by solution-based method Reviewed

    Junichi Kimura, Chentir Mohamed-Tahar, Takao Shimizu, Hiroshi Uchida, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS   53 ( 9 )   09PA12   2014.9

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  • Preparation and characterization of Ba(ZrxTi1-x)O-3 thin films for high-frequency applications Reviewed

    Kim Jin Woong, Hiromi Shima, Takashi Yamamoto, Shintaro Yasui, Hiroshi Funakubo, Tomoaki Yamada, Ken Nishida

    JAPANESE JOURNAL OF APPLIED PHYSICS   53 ( 9 )   2014.9

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    DOI: 10.7567/JJAP.53.09PB04

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  • Dependence of e31,f on polar axis texture for tetragonal Pb(Zrx,Ti1-x)O3 thin films Reviewed

    Charles B. Yeager, Yoshitaka Ehara, Naoya Oshima, Hiroshi Funakubo, Susan Trolier-McKinstry

    J. Appl. Phys.   116 ( 10 )   2014.9

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    DOI: 10.1063/1.4895339

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  • Structural and tunable characteristics of Ba(ZrxTi1-x)O-3 films prepared by RF-magnetron sputtering using a metal target Reviewed

    Jin-Woong Kim, Hiromi Shima, Ken Nishida, Takashi Yamamoto, Hiroshi Funakubo

    JOURNAL OF THE KOREAN PHYSICAL SOCIETY   65 ( 3 )   275 - 280   2014.8

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    DOI: 10.3938/jkps.65.275

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  • Direct observation of intrinsic piezoelectricity of Pb(Zr,Ti)O-3 by time-resolved x-ray diffraction measurement using single-crystalline films Reviewed

    Takashi Fujisawa, Yoshitaka Ehara, Shintaro Yasui, Takafumi Kamo, Tomoaki Yamada, Osami Sakata, Hiroshi Funakubo

    APPLIED PHYSICS LETTERS   105 ( 1 )   012905-1 - 012905-5   2014.7

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    DOI: 10.1063/1.4889803

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  • Dielectric Peoperty of (001) One-axis Oriented CaBi4Ti4O15-based Thin Films and Its Temperature Dependence Reviewed

    Y. Kondoh, S. Ogawa, J. Kimura, T. Kiguchi, T.J. Konno, H. Funakubo, H. Uchida

    Journal of Ceramics Society Japan   122 ( 6 )   477 - 482   2014.6

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    DOI: 10.2109/jcersj2.122.477

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  • Chemical and Structural Effects at Columnar Grain Boundary in Yttria-Stabilized Zirconia Thin Film on Ionic Conductivity Reviewed

    Takanori Kiguchi, Yumiko Kodama, Toyohiko J. Konno, Hiroshi Funakubo, Osamu Sakurai, Kazuo Shinozaki

    Journal of Ceramics Society Japan   122 ( 6 )   430 - 435   2014.6

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    This study elucidated the effects of coherence and chemical composition on ionic conductivity at columnar grain boundaries of 6 mol% Y2O3 doped ZrO2 (YSZ) thin films. The YSZ thin films were deposited with several orientation textures on MgO (100), Al2O3 (102), and SiO2-glass substrates using metal-organic chemical vapor deposition (MOCVD). Impedance measurements revealed the total ionic conductivity of the thin films. The activation energy of the ionic conduction of YSZ thin films on MgO or Al2O3 substrates was 90-120 kJ/mol. These films showed similar dependence that simply increased along with decreasing coherency at the columnar grain boundaries. However, that of YSZ thin films on SiO2 glass substrate showed dependence of the coherency at the columnar grain boundaries, but the value is higher than those of the films on MgO or Al2O3 substrates by more than 20 kJ/mol. Structural and compositional analyses clarified that the second phase of SiO2 is segregated at mid-gaps between columnar grain boundaries in YSZ thin films on a SiO2 glass substrate. Results show that two factors affect ionic conductivity at the columnar grain boundaries in YSZ thin films: structural coherency and the second phase of ionic insulator.

    DOI: 10.2109/jcersj2.122.430

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  • Electrical Properties of (110)-Oriented Nondoped Mg2Si Films with p-Type Conduction Prepared by RF Magnetron Sputtering Method Reviewed

    Shota Ogawa, Atsuo Katagiri, Takao Shimizu, Masaaki Matsushima, Kensuke Akiyama, Yoshisato Kimura, Hiroshi Uchida, Hiroshi Funakubo

    JOURNAL OF ELECTRONIC MATERIALS   43 ( 6 )   2269 - 2273   2014.6

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    DOI: 10.1007/s11664-014-3040-6

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  • Characterizations of epitaxial Bi(Mg1/2Ti1/2)O-3-Bi(Zn1/2Ti1/2)O-3 solid solution films grown by pulsed laser deposition Reviewed

    Takahiro L. Oikawa, Shintaro Yasui, Takayuki Watanabe, Hisato Yabuta, Takeshi Kobayashi, Kaoru Miura, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS   53 ( 5 )   2014.5

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  • Characterizations of epitaxial Bi(Mg

    Oikawa Takahiro, Yasui Shintaro, Watanabe Takayuki, Yabuta Hisato, Kobayashi Takeshi, Miura Kaoru, Funakubo Hiroshi

    Jpn. J. Appl. Phys.   53 ( 5 )   05FE06   2014.4

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    DOI: 10.7567/JJAP.53.05FE06

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  • Crystal orientation dependency of ferroelectric property in rhombohedral Pb(Zr,Ti)O-3 films Reviewed

    Yoshitaka Ehara, Satoru Utsugi, Takahiro Oikawa, Tomoaki Yamada, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS   53 ( 4 )   2014.4

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    DOI: 10.7567/JJAP.53.04ED06

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  • Effect of heat treatment on electrical and electromechanical properties of hydrothermally synthesized epitaxial (K0.5Na0.5)NbO3 films Reviewed

    T. Shiraishi, N. Kaneko, M. Kurosawa, H. Uchida, T. Hirayama, H. Funakubo

    Jpn. J. Appl. Phys.   53 ( 5 )   05FE02-1 - 05FE02-6   2014.3

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  • Columnar Grain Boundary Coherence in Yttria-Stabilized Zirconia Thin Film: Effects on Ionic Conductivity Reviewed

    Takanori Kiguchi, Toyohiko J. Konno, Hiroshi Funakubo, Osamu Sakurai, Kazuo Shinozaki

    Journal of Ceramics Society Japan   122 ( 1 )   72 - 77   2014.1

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    This study elucidated the effects of coherence of grain boundary of 6 mol % Y2O3-doped ZrO2 (YSZ) thin films on ionic conductivity. The YSZ thin films were deposited with several orientation textures on MgO (100) and Al2O3 (102) substrates using metal–organic chemical vapor deposition (MOCVD). Impedance measurements revealed that the total ionic conductivity of the thin films was restricted by the columnar grain boundary. The orientation degree, defined by the average full width at half maximum (FWHM) of 100 pole of the YSZ thin films, mainly determines the ionic conductivity across the columnar grain boundary because of the degree of the crystallographic coherence. Films with a strongly oriented columnar structure showed ionic conductivity of about 30 times higher than that of nanocrystalline films having random orientation. The activation energy of the ionic conduction across the columnar grain boundaries simply increased concomitantly with decreasing degree of orientation of the columnar grains of the films. HRTEM analyses revealed that the small tilt angle grain boundary with low lattice defect density and with no second phase at grain boundaries showed superior properties. Consequently, a columnar structure with high coherence is preferred for use as a thin film ionic conductor.

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  • Photovoltaic properties of Si-based quantum-dot-sensitized solar cells prepared using laser plasma in liquid Reviewed

    Hiroki Kobayashi, Pattarin Chewchinda, Yasunori Inoue, Hiroshi Funakubo, Michikazu Hara, Masaie Fujino, Osamu Odawara, Hiroyuki Wada

    JAPANESE JOURNAL OF APPLIED PHYSICS   53 ( 1 )   010208   2014.1

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  • Dielectric tunability analysis of pyrochlore Bi1.5Zn1.0Nb1.5O7 using epitaxial films on pyrochlore Bi2Ru2O7 conductive layers Reviewed

    Mitsumasa Nakajima, Rikyu Ikariyama, P. S. Sankara Rama Krishnan, Tomoaki Yamada, Hiroshi Funakubo

    APPLIED PHYSICS LETTERS   104 ( 2 )   2014.1

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    DOI: 10.1063/1.4861221

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  • Impact of thermal expansion of substrates on phase transition temperature of VO2 films Reviewed

    J. Sakai, M. Zaghrioui, M. Matsushima, H. Funakubo, K. Okimura

    Journal of Applied Physics   116   123510 - 1325   2014

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    DOI: 10.1063/1.4896500

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  • Low temperature preparation of KNbO3 films by hydrothermal method and there characterization Reviewed

    N. Kaneko, T. Shiraishi, M. Kurosawa, T. Shimizu, H. Funakubo

    Mater. Res. Soc. Symp. Proc.   1659   49 - 54   2014

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    DOI: 10.1557/opl.2014.180

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  • Structural and Electrical Properties of Ba(ZrxTi1-x)O-3 Films Prepared by RF-magnetron Sputtering Using Metal Targets Reviewed

    Jin Woong Kim, Hiromi Shima, Hiroshi Funakubo, Ken Nishida, Takashi Yamamoto

    INTEGRATED FERROELECTRICS   157 ( 1 )   101 - 113   2014

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    DOI: 10.1080/10584587.2014.912110

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  • One-axis-oriented crystal growth of lead zirconate titanate thin films on metal substrates using perovskite-type oxide nanosheet layer Reviewed

    Y. Minemura, Y. Kondoh, H. Funakubo, H. Uchida

    ELECTROCERAMICS IN JAPAN XVI   582   15 - +   2014

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  • In-situ Raman Spectroscopic Investigation of the Effect of Cooling Speed on Domain Formation in PbTiO3 Films Reviewed

    M. Matsuoka, M. Nishide, T. Tai, J. W. Kim, H. Shima, T. Katoda, H. Funakubo, K. Nishida, T. Yamamoto

    INTEGRATED FERROELECTRICS   157 ( 1 )   39 - 46   2014

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    DOI: 10.1080/10584587.2014.911626

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  • Preparation of Bismuth Based Perovskite Oxides and Their Electric Properties Reviewed

    Ichiro Fujii, Atsushi Shimamura, Kouichi Nakashima, Nobuhiro Kumada, Hiroshi Funakubo, Yoshihiro Kuroiwa, Satoshi Wada

    ELECTROCERAMICS IN JAPAN XVI   582   71 - +   2014

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  • Effects of the porous structures in the porous flow field type separators on fuel cell performances

    Tetsuro Kariya, Tomoki Hirono, Toshio Shudo, Hiroshi Funakubo

    International Journal of Hydrogen Energy   Vol. 39   2014

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    DOI: 10.1016/j.ijhydene.2014.07.070

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  • High Temperature Reproducible Preparation of Mg2Si Films on (001)Al2O3 substrates Using RF Magnetron Sputtering Method Reviewed

    Katagiri Atsuo, Ogawa Shota, Shimizu Takao, Matsushima Masaaki, Akiyama Kensuke, Funakubo Hiroshi

    MRS Proceedings   1642   mrsf13 - 1642   2014

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    DOI: 10.1557/opl.2014.447

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  • Measurement of transient photoabsorption and photocurrent of BiFeO 3 thin films: Evidence for long-lived trapped photocarriers Reviewed

    Y. Yamada, T. Nakamura, S. Yasui, H. Funakubo, Y. Kanemitsu

    Physical Review B - Condensed Matter and Materials Physics   89 ( 3 )   035133   2014

  • Activation of piezoelectric property of PZT thin films by pulse poling

    T. Kobayashi, Y. Suzuki, N. Makimoto, H. Funakubo, R. Maeda

    Journal of Physics: Conference Series   557 ( 1 )   2014

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    DOI: 10.1088/1742-6596/557/1/012130

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  • 巨大正方晶強誘電体薄膜 Reviewed

    安井伸太郎, 舟窪 浩, 坂田 修身

    Ceramic Data Book   vol. 41 ( No. 95 )   153 - 157   2013.12

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  • Fabrication and Characterization of Novel Perovskite-Type Bi-Based Piezoelectric Thin Films Reviewed

    Shintaro YASUI, Hiroshi FUNAKUBO, Osami SAKATA

    JOURNAL OF THE CRYSTALLOGRAPHIC SOCIETY OF JAPAN(日本結晶学会誌)   vol. 55 ( No. 5 )   296 - 301   2013.12

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    Novel perovskite-type Bi-based piezoelectric materials which was discovered by high pressuresynthesis were fabricated by MOCVD method. We also suggested a piezoresponse measurementsystem using synchrotron X-ray for In-situ measurement of “Polarization - Lattice strain - Electric field” at a same time.

    DOI: 10.5940/jcrsj.55.296

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  • Epitaxial growth of Mg2Si films on strontium titanate single crystals Reviewed

    Kensuke Akiyama, Atsuo Katagiri, Shota Ogawa, Masaaki Matsushima, Hiroshi Funakubo

    Physica Status Solidi (C) Current Topics in Solid State Physics   10 ( 12 )   1688 - 1691   2013.12

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    DOI: 10.1002/pssc.201300332

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  • Direct Observation of Atomic Arrangement around 90° Domain Wall in Lead Titanate Thin Film. Reviewed

    Takanori Kiguchi, Toyohiko J. Konno, Yoshitaka Ehara, Tomoaki Yamada, Hiroshi Funakubo

    Materials Research Society Symposium Proceeding   1515   mrsf12-1515-II05-02-01 - mrsf12-1515-II05-02-06   2013.10

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    DOI: 10.1557/opl.2013.1094

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  • Fabrication and Evaluation of One-axis Oriented Lead Zirconate Titanate Films using Metal-oxide Nanosheet Interface Layer Reviewed

    Yoshiki Minemura, Kohei Nagasaka, Takanori Kiguchi, Toyohiko J. Konno, Hiroshi Funakubo, Hiroshi Uchida

    Japanese Journal of Applied Physics   52 ( 9 )   09KA04-1 - 09KA04-7   2013.9

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    DOI: 10.7567/JJAP.52.09KA04

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  • Crystal Structure for Hydrothermally-synthesized Epitaxial (KxNa1-x)NbO3 films Reviewed

    Takahisa Shiraishi, Noriyuki Kaneko, Hiro Einishi, Takao Shimizu, Minoru Kurosawa, Hiroshi Uchida, Takeshi Kobayashi, Takanori Kiguchi, Toyohiko J. Konno, Hiroshi Funakubo

    Japanese Journal of Applied Physics   52 ( 9 )   09KA11-1 - 09KA11-5   2013.9

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  • Effects of Bipolar Pulse Poling on the Ferroelectric and Piezoelectric Properties of Tetragonal Composition Pb(Zr-0.3,Ti-0.7)O-3 Thin Films on Microelectromechanical Systems Microcantilevers Reviewed

    Takeshi Kobayashi, Natsumi Makimoto, Yasuhiro Suzuki, Hiroshi Funakubo, Takahiro Oikawa, Auyumi Wada, Ryutaro Maeda

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 9 )   2013.9

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    DOI: 10.7567/JJAP.52.09KA01

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  • Investigation of PbTiO3 thin films with reduced and re-oxidized treatment using Raman spectroscopy Reviewed

    Nishida Ken, Osada Minoru, Moriwake Hiroki, Sakai Joe, Ito Nobuaki, Nishide Masamichi, Oka Hirotaka, Matsuoka Masashi, Ikariyama Rikyu, Funakubo Hiroshi, Katoda Takashi, Yamamoto Takashi

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   121 ( 1417 )   859 - 862   2013.9

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  • Phase Boundary Shift by Thermal Strain in {100}-Oriented Epitaxial Pb(ZrxTi1-x)O-3 Film Grown on CaF2 Substrates Reviewed

    Ehara Yoshitaka, Oikawa Takahiro, Yamada Tomoaki, Funakubo Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 9 )   09KA02 - 1-5   2013.9

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    DOI: 10.7567/JJAP.52.09KA02

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  • Composition dependence of crystal structure, electrical and piezoelectric properties for hydrothermally-synthesized 3 um-thickness (KxNa1-x)NbO3 films Reviewed

    T. Shiraishi, H. Einishi, S. Yasui, M. Ishikawa, T. Hasegawa, M. Kurosawa, H. Uchida, Y. Sakashita, H. Funakubo

    J. Ceram. Soc. Jpn.   121 ( 1416 )   627 - 631   2013.8

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    DOI: 10.2109/jcersj2.121.627

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  • Oxygen vacancies in PbTiO3 thin films probed by resonant Raman spectroscopy Reviewed

    Nishida Ken, Osada Minoru, Sakai Joe, Ito Nobuaki, Katoda Takashi, Ikariyama Rikyu, Funakubo Hiroshi, Moriwake Hiroki, Yamamoto Takashi

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   121 ( 1416 )   598 - 601   2013.8

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    DOI: 10.2109/jcersj2.121.598

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  • Unusual 90 degrees domain structure in (2/3)Bi(Zn1/2Ti1/2)O-3-(1/3)BiFeO3 epitaxial films with giant 22% tetragonal distortion Reviewed

    Yasui Shintaro, Yazawa Keisuke, Matsushima Masaaki, Yamada Tomoaki, Morioka Hitoshi, Uchida Hiroshi, Iijima Takashi, You Lu, Wang Junling, Yamamoto Takahisa, Ikuhara Yuichi, Funakubo Hiroshi

    APPLIED PHYSICS LETTERS   103 ( 4 )   2013.7

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    DOI: 10.1063/1.4816420

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  • Temperature and electric field stabilities of dielectric and insulating properties for c-axis-oriented CaBi4Ti4O15 films Reviewed

    Kimura Junichi, Takuwa Itaru, Matsushima Masaaki, Yasui Shintaro, Yamada Tomoaki, Funakubo Hiroshi

    Journal of Applied Physics   114 ( 2 )   2013.7

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    DOI: 10.1063/1.4811816

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  • Nano-structure around 90° domain wall and elastic interaction with misfit dislocation in PbTiO3 thin film Reviewed

    T. Kiguchi, K. Aoyagi, Y. Ehara, H. Funakubo, T. Yamada, N. Usami, T.J. Konno

    Key Engineering Materials   566   167 - 170   2013.6

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    DOI: 10.4028/www.scientific.net/KEM.566.167

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  • Ferroelectric and Piezoelectric Properties of (K,Na)NbO3 Thick Films Prepared on Metal Substrates by Hydrothermal Method Reviewed

    T. Shiraishi, H. Einishi, S. Yasui, T. Hasegawa, M. Kurosawa, M. Ishikawa, H. Uchida, Y. Sakashita, H. Funakubo

    J. Korean Phys. Soc.   62 ( 7 )   1055 - 1059   2013.4

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    DOI: 10.3938/jkps.62.1055

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  • Squareness Control in Polarization-Electric Field Hysteresis Curves in Rhombohedral Pb(Zr, Ti)O-3 Films Reviewed

    Sumi Akihiro, Oikawa Takahiro, Morioka Hitoshi, Okamoto Shoji, Yokoyama Shintaro, Watanabe Takayuki, Ehara Yoshitaka, Funakubo Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 4 )   04CD09 - 04CD09-5   2013.4

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  • Growth of (111) One-Axis-Oriented Bi(Mg1/2Ti1/2)O-3 Films on (100) Si Substrates Reviewed

    Oikawa Takahiro, Yasui Shintaro, Watanabe Takayuki, Ishii Koji, Ehara Yoshitaka, Yabuta Hisato, Kobayashi Takeshi, Fukui Tetsuro, Miura Kaoru, Funakubo Hiroshi

    Japanese Journal of Applied Physics   52 ( 4 )   2013.4

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    DOI: 10.7567/JJAP.52.04CH09

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  • Small-strain (100)/(001)-oriented epitaxial PbTiO3 films with film thickness ranging from nano- to micrometer order grown on (100)CaF2 substrates by metal organic chemical vapor deposition Reviewed

    Chentir Mohamed-Tahar, Utsugi Satoru, Fujisawa Takashi, Ehara Yoshitaka, Ishikawa Mutsuo, Morioka Hitoshi, Yamada Tomoaki, Matsushima Masaaki, Funakubo Hiroshi

    JOURNAL OF MATERIALS RESEARCH   28 ( 5 )   696 - 701   2013.3

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    DOI: 10.1557/jmr.2012.441

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  • Nanoscale Origins of Nonlinear Behavior in Ferroic Thin Films Reviewed

    Vasudevan Rama K, Okatan M. Baris, Duan Chen, Ehara Yoshitaka, Funakubo Hiroshi, Kumar Amit, Jesse Stephen, Chen Long-Qing, Kalinin Sergei V, Nagarajan Valanoor

    ADVANCED FUNCTIONAL MATERIALS   23 ( 1 )   81 - 90   2013.1

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    DOI: 10.1002/adfm.201201025

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  • Crystal Structure Change with Applied Electric Field for (100)/(001)-oriented Polycrystalline Lead Zirconate Titanate Films Reviewed

    A. Wada, Y. Ehara, S. Yasui, T. Oikawa, M. Nakajima, M. Wada, P. S, S. R. Krishnan, S. Okamura, K. Nishida, T. Yamamoto, T. Kobayashi, H. Morioka, H. Funakubo

    Proceedings of the Materials Research Society   1507   mrsf12-1507-aa12-21   2013.1

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  • 液中レーザーアブレーションによるシリコンナノ粒子を用いた量子ドット増感太陽電池への検討 Reviewed

    小林 宏輝, Pattarin Chewchinda, 大谷 弘之, 舟窪 浩, 小田原 修, 和田 裕之

    2013

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  • Preparation of Bismuth-Based Perovskites with Non-integer A and B Site Valence and Their Properties: Reviewed

    Fujii Ichiro, Shimamura Atsushi, Nakashima Kouichi, Kumada Nobuhiro, Funakubo Hiroshi, Kuroiwa Yoshihiro, Wada Satoshi

    Trans. Mat. Res. Soc. Japan   38 ( 1 )   49 - 52   2013

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    Non-integer A and B site cation valence perovskite oxides with bismuth and niobium cations were synthesized. Using the tolerance factor, some single phase perovskite oxides were obtained. For the A1+xB5-xO3 type (Bix/2K-x/2+1)(TixNb1-x)O3 ceramics, the Curie temperature increased from approximately 200 to 350 °C with increasing x from 0.5 to 0.9. These results were discussed with the Abrahams relations.

    DOI: 10.14723/tmrsj.38.49

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  • Leakage current characteristics of new SrBi<inf>4</inf>Ti<inf>4</inf>O <inf>15</inf>/CaBi<inf>4</inf>Ti<inf>4</inf>O<inf>15</inf> thin-film capacitor with excellent electric stability

    Hideaki Kawahara, Naoya Tahara, Shuhei Nomura, Kaoru Yamashita, Minoru Noda, Hiroshi Uchida, Hiroshi Funakubo

    IMFEDK 2013 - 2013 International Meeting for Future of Electron Devices, Kansai   80 - 81   2013

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    DOI: 10.1109/IMFEDK.2013.6602250

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  • Control of volume fraction of non-180° domains by thermal strain in epitaxial rhombohedral Pb(Zr, Ti)O3 thick films Reviewed

    Yoshitaka Ehara, Satoru Utsugi, Takahiro Oikawa, Tomoaki Yamada, Hiroshi Funakubo

    Materials Research Society Symposium Proceedings   1507   2013

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    DOI: 10.1557/opl.2013.514

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  • Crystal Structure Analysis of Hydrothermally-synthesized Epitaxial (KxNa1-x)NbO3 Film

    Takahisa Shiraishi, Noriyuki Kaneko, Hiro Einishi, Takao Shimizu, Minoru Kurosawa, Hiroshi Uchida, Takeshi Kobayashi, Takanori Kiguchi, Toyohiko J. Konno, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   Vol. 52   2013

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  • Analysis of lattice defects in an epitaxial PbTiO3 thick film by transmission electron microscopy Reviewed

    Kenta Aoyagi, Takanori Kiguchi, Yoshitaka Ehara, Hiroshi Funakubo, Toyohiko J. Konno

    Key Engineering Materials   566   171 - 174   2013

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  • Fabrication of BiFeO3-Bi(Zn1/2Ti1/2)O-3 Solid Solution Thin Films using Perovskite-type Oxide Interface Layer Reviewed

    Hayashi Mari, Yasui Shintaro, Funakubo Hiroshi, Uchida Hiroshi

    ELECTROCERAMICS IN JAPAN XV   566   163 - 166   2013

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    DOI: 10.4028/www.scientific.net/KEM.566.163

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  • Growth of 130 um Thick Epitaxial KNbO3 Film by Hydrothermal Method Reviewed

    T. Shiraishi, H. Einishi, M. Ishikawa, T. Hasegawa, M. Kurosawa, H. Funakubo

    Mater. Res. Soc. Symp. Proc.   1494   1 - 6   2013

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    DOI: 10.1557/opl.2013.50

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  • Molecular Dynamics Simulation of 90˚ Ferroelectric Domains in PbTiO3 Reviewed

    Takeshi Nishimatsu, Kenta Aoyagi, Takanori Kiguchi, Toyohiko J. Konno, Yoshiyuki Kawazoe, Hiroshi Funakubo, Anil Kumar, Umesh V. Waghmare

    Journal of the Physical Society of Japan   81 ( 12 )   124702-1 - 124702-5   2012.11

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    DOI: 10.1143/JPSJ.81.124702

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  • Complex domain structure in relaxed PbTiO3 thick films grown on (100)(c)SrRuO3//(100)SrTiO3 substrates Reviewed

    Yasui Shintaro, Ehara Yoshitaka, Utsugi Satoru, Nakajima Mitsumasa, Funakubo Hiroshi, Gruverman Alexei

    Journal of Applied Physics   112 ( 5 )   2012.9

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    DOI: 10.1063/1.4746078

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  • Dynamic piezoresponse force microscopy: Spatially resolved probing of polarization dynamics in time and voltage domains Reviewed

    A. Kumar, Y. Ehara, A. Wada, H. Funakubo, F. Griggio, S. Trolier-Mckinstry, S. Jesse, S. V. Kalinin

    Journal of Applied Physics   112 ( 5 )   2012.9

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    DOI: 10.1063/1.4746080

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  • Preparation and Characterization of Ba(ZrxTi1-x)O-3 Thin Films Using Reactive Sputtering Method Reviewed

    Jin Woong Kim, Tsuyoshi Osumi, Masashi Mastuoka, Takeshi Tai, Masamichi Nishide, Hiroshi Funakubo, Hiromi Shima, Ken Nishida, Takashi Yamamoto

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 9 )   2012.9

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    DOI: 10.1143/JJAP.51.09LA01

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  • Charge trapping-detrapping induced resistive switching in Ba0.7Sr0.3TiO3 Reviewed

    Xi Zou, Hock Guan Ong, Lu You, Weigang Chen, Hui Ding, Hiroshi Funakubo, Lang Chen, Junling Wang

    AIP ADVANCES   2 ( 3 )   2012.9

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    DOI: 10.1063/1.4754150

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  • Dielectric Property of Silicate-Doped CaBi4Ti4O15 Thin Films Reviewed

    Shota Ogawa, Yohta Kondoh, Junichi Kimura, Hiroshi Funakubo, Hiroshi Uchida

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 9 )   2012.9

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    DOI: 10.1143/JJAP.51.09LA16

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  • Investigation of Sputtering Damage in SrRuO3 Films Prepared by Sputtering with Raman and X-ray Photoemission Spectroscopies Reviewed

    Takeshi Tai, Masamichi Nishide, Masashi Matsuoka, Takafumi Kamo, Hiroshi Funakubo, Takashi Katoda, Hiromi Shima, Ken Nishida, Takashi Yamamoto

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 9 )   2012.9

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    DOI: 10.1143/JJAP.51.09LA19

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  • Effects of A-Site Occupancy of Bismuth Ions on the Dielectric Tunable Properties of Pyrochlore Bismuth Zinc Niobate Films Reviewed

    Mitsumasa Nakajima, Tomoaki Yamada, Shingo Okaura, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 9 )   2012.9

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    DOI: 10.1143/JJAP.51.09LA10

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  • Anisotropic electrical properties in bismuth layer structured dielectrics with natural super lattice structure Reviewed

    Takashi Kojima, Junichi Kimura, Muneyasu Suzuki, Kenji Takahashi, Takahiro Oikawa, Yukio Sakashita, Kazumi Kato, Takayuki Watanabe, Tadashi Takenaka, Tomoaki Yamada, Hiroshi Funakubo

    APPLIED PHYSICS LETTERS   101 ( 1 )   2012.7

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    DOI: 10.1063/1.4733326

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  • Noncontact probing method for estimation of ferroelectric properties of PbTiO3-based films for microelectromechanical systems Reviewed

    Ehara Yoshitaka, Utsugi Satoru, Nakajima Mitsumasa, Chentir Mohamed-Tahar, Yamada Tomoaki, Iijima Takashi, Nishida Ken, Yamamoto Takashi, Funakubo Hiroshi

    JOURNAL OF MATERIALS RESEARCH   27 ( 11 )   1430 - 1435   2012.6

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    DOI: 10.1557/jmr.2012.100

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  • Domain tuning in mixed-phase BiFeO3 thin films using vicinal substrates Reviewed

    You Lu, Yasui Shintaro, Ehara Yoshitaka, Zou Xi, Ding Hui, Chen Zuhuang, Chen Weigang, Chen Lang, Funakubo Hiroshi, Wang Junling

    Applied Physics Letters   100 ( 20 )   2012.5

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    DOI: 10.1063/1.4717986

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  • Stacking faults in an epitaxially grown PbTiO3 thick film and their size distribution Reviewed

    Kenta Aoyagi, Yumiko Kodama, Takanori Kiguchi, Yoshitaka Ehara, Hiroshi Funakubo, Toyohiko J. Konno

    Materials Science and Engineering B   177 ( 7 )   528 - 531   2012.4

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    DOI: 10.1016/j.mseb.2012.01.013

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  • Growth of (111)-oriented BaTiO3-Bi(Mg0.5Ti0.5)O-3 epitaxial films and their crystal structure and electrical property characterizations Reviewed

    Tanaka Hidenori, Chentir Mohamed-Tahar, Yamada Tomoaki, Yasui Shintaro, Ehara Yoshitaka, Yamato Keisuke, Kashiwagi Yuta, Theng Chua Ngeah, Wang Junling, Okamura Soichiro, Uchida Hiroshi, Iijima Takashi, Wada Satoshi, Funakubo Hiroshi

    Journal of Applied Physics   111 ( 8 )   2012.4

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    DOI: 10.1063/1.4704384

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  • Effect of point defects on lattice constant in MgO thin film deposited on silicon(001) substrate Reviewed

    S. Kaneko, T. Nagano, T. Ito, M. Yasui, T. Ozawa, M. Soga, Y. Motoizumi, H. Funakubo, M. Yoshimoto

    EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS   58 ( 1 )   2012.4

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    DOI: 10.1051/epjap/2012110247

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  • 90-degree Ferroelectric Domains in PbTiO3: Experimental Observation and Molecular Dynamics Simulations

    Kenta Aoyagi, Takeshi Nishimatsu, Takanori Kiguchi, Toyohiko J. Konno, Yoshiyuki Kawazoe, Hiroshi Funakubo, Anil Kumar, Umesh V. Waghmare

    2012.2

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    We report observation of 90-degree ferroelectric domain structures in
    transmission electron microscopy (TEM) of epitaxially-grown films of PbTiO3.
    Using molecular dynamics (MD) simulations based on first-principles effective
    Hamiltonian of bulk PbTiO3, we corroborate the occurance of such domains
    showing that it arises as metastable states only in cooling simulations (as the
    temperature is lowered) and establish characteristic stability of 90-degree
    domain structures in PbTiO3. In contrast, such domains do not manifest in
    similar simulations of BaTiO3. Through a detailed analysis based on energetics
    and comparison between PbTiO3 and BaTiO3, we find that 90-degree domain
    structures are energetically favorable only in the former, and the origin of
    their stability lies in the polarization-strain coupling. Our analysis suggests
    that they may form in BaTiO3 due to special boundary condition and/or
    defect-related inhomogeneities.

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    Other Link: http://arxiv.org/pdf/1202.3893v1

  • Preparation of InP Nanoparticles by Laser Ablation in Liquid Reviewed

    Kagaya S, Ehara Y, Kitamoto Y, FUnakubo H, Hara M, Yamazaki Y, Odawara O, Wada H

    The Review of Laser Engineering   40 ( 2 )   117 - 121   2012.2

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    A colloidal solution of InP nanoparticles was prepared by laser ablation in liquid. An InP target was
    irradiated in DI water, ethanol, and hexane with a Nd:YAG laser (1064 nm, 8 ns, 10 Hz). Indium metal
    nanoparticles were formed as a by-product during the preparation of InP nanoparticles by laser ablation
    in liquid. The primary particle size did not depend on the solvent or the energy density of laser.
    Nanoparticles were well-dispersed in ethanol by electrostatic repulsion, and they aggregated in DI water
    and hexane. The zeta potential of the nanoparticles in ethanol was ‒ 76 mV. Phosphoric acid was
    detected in the solvent when the DI water was used as a solvent for laser ablation in liquid. The InP
    target was decomposed into indium and phosphorus, and phosphorus reacted with the solvent.

    DOI: 10.2184/lsj.40.2_117

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  • Film Thickness Dependence of Ferroelectric Properties of (111)-Oriented Epitaxial Bi(Mg1/2Ti1/2)O-3 Films Reviewed

    Oikawa Takahiro, Yasui Shintaro, Watanabe Takayuki, Yabuta Hisato, Ehara Yoshitaka, Fukui Tetsuro, Funakubo Hiroshi

    Japanese Journal of Applied Physics   51 ( 9 )   09LA04 - 09LA04-4   2012

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    The origin of the ferroelectricity of Bi(Mg1/2Ti1/2)O3 films was investigated. Epitaxial Bi(Mg1/2Ti1/2)O3 films with film thicknesses of 50 to 800 nm were grown on (111)\text{cSrRuO3/(111)SrTiO3 substrates by pulsed laser deposition. A Bi(Mg1/2Ti1/2)O3 film was not strongly clamped from the substrate and identified to have rhombohedral symmetry with a = 0.398 nm and \alpha = 89.8°, which was independent of film thickness within 100 to 800 nm. The relative dielectric constant, remanent polarization, and coercive field of the Bi(Mg1/2Ti1/2)O3 films at room temperature were almost constant at about 250, 60 μC/cm2, and 240 kV/cm, respectively, for film thicknesses above 200 nm. These data suggest that Bi(Mg1/2Ti1/2)O3 films are ferroelectric.

    DOI: 10.1143/jjap.51.09la04

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  • Development of Novel Pb, Li, Na and K-free Piezoelectric Materials for Si-based MEMS Application Reviewed

    Funakubo Hiroshi, Yasui Shintaro, Yazawa Keisuke, Nagata Junichi, Oikawa Takahiro, Yamada Tomoaki, Uchida Hiroshi, IEEE

    2012 International Symposium on Applications of Ferroelectrics Held Jointly With 11th Ieee Ecapd and Ieee Pfm (Isaf/ecapd/pfm)   2012

  • Film Thickness Dependence of Crystal Structure in {100}-Oriented Epitaxial Pb(Zr0.65Ti0.35)O-3 Films Grown on Single-Crystal Substrates with Different Thermal Expansion Coefficients Reviewed

    Ehara Yoshitaka, Yasui Shintaro, Ishii Koji, Funakubo Hiroshi

    Japanese Journal of Applied Physics   51 ( 9 )   09LA14 - 09LA14-5   2012

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    {100}-oriented epitaxial Pb(Zr0.65Ti0.35)O3 films with various film thicknesses from 0.1 to 3 μm were grown on (100)cSrRuO3 \varparallel (100)SrTiO3 and (100)cSrRuO3 \varparallel (100)LaNiO3 \varparallel (001)CaF2 substrates. The out-of-plane/in-plane lattice parameter ratio of the films on the CaF2 substrates was larger than that on the SrTiO3 substrates up to 1.1 μm film thickness, while (90{\degree}-\alpha) (\alpha was defined as the internal tilt angle) was almost 0°. Results of analysis of Raman spectra and piezoresponse images suggest that the 1.1-μm-thick film grown on the (100)cSrRuO3 \varparallel (100)LaNiO3 \varparallel (001)CaF2 substrate had tetragonal symmetry with a polar-axis orientation. Moreover, the saturation polarization values of the films measured from P--E hysteresis loops correspond to the two P_{\text{s } } values estimated from the thermodynamic theory, assuming the change in the polar direction due to the symmetry change to tetragonal, and from the crystal distortion in tetragonal symmetry. This can be explained by the large compressive stress from the CaF2 substrate having a large thermal expansion coefficient.

    DOI: 10.1143/jjap.51.09la14

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  • Preparation and Characterization of BaTiO3 Thin Films Using Reactive Sputtering Method with Metal Target Reviewed

    Tsuyoshi Osumi, Masamichi Nishide, Hiroshi Funakubo, Hiromi Shima, Ken Nishida, Takashi Yamamoto

    INTEGRATED FERROELECTRICS   133   42 - 48   2012

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    DOI: 10.1080/10584587.2012.664029

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  • Epitaxial PZT fi lms for MEMS printing applications Reviewed

    HIROSHI FUNAKUBO, Dekkers, M., Sambri, A., Gariglio, S., Shklyarevskiy, I., Rijnders, G.

    MRS Bulletin   Vol. 37 ( No. 11 )   1030 - 1038   2012

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    DOI: 10.1557/mrs.2012.271

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  • One-axis crystal growth of BiFeOOne-axis crystal growth of BiFeO3 thin films using perovskite-type oxide interface layers thin films using perovskite-type oxide interface layers

    Uchida Hiroshi, Hayashi Mari, Sasajima Keiichi, Minemura Yoshiki, Yasui Shintaro, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br>Preprints of Fall Meeting of The Ceramic Society of Japan   2012   318 - 318   2012

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    DOI: 10.14853/pcersj.2012S.0.318.0

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  • Enhancement of 1.55 m luminescence of -FeSi2 grown from solvent phase by Cu-Si and Au-Si eutectic reaction on Si substrate

    Kensuke Akiyama, Satoru Kaneko, Hiroshi Funakubo, Masaru Itakura

    Mater. Res. Soc. Symp. Proc.   Vol. 1396   2012

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  • Distribution of Crystal Structure in Epitaxial Pb(Zr-0.42,Ti-0.58)O-3 Film Grown on (111)(c)SrRuO3//(111)SrTiO3 Substrate Reviewed

    Masamichi Nishide, Shintaro Yokoyama, Hiroshi Funakubo, Takashi Katoda, Hiromi Shima, Ken Nishida, Takashi Yamamoto

    INTEGRATED FERROELECTRICS   133   54 - 60   2012

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    DOI: 10.1080/10584587.2012.664063

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  • Improved ferroelectric property of very thin Mn-doped BiFeO3 films by an inlaid Al2O3 tunnel switch Reviewed

    Hyun Ju Lee, Min Hyuk Park, Yu Jin Kim, Cheol Seong Hwang, Jeong Hwan Kim, Hiroshi Funakubo, Hiroshi Ishiwara

    JOURNAL OF APPLIED PHYSICS   110 ( 7 )   2011.10

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    DOI: 10.1063/1.3647777

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  • Ultrafast switching of ferroelastic nanodomains in bilayered ferroelectric thin films Reviewed

    Y. Ehara, S. Yasui, J. Nagata, D. Kan, V. Anbusathaiah, T. Yamada, O. Sakata, H. Funakubo, V. Nagarajan

    APPLIED PHYSICS LETTERS   99 ( 18 )   182906-1 - 182906-3   2011.10

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    DOI: 10.1063/1.3657468

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  • Preparation and Characteristics of Bi0.5Na0.5TiO3 Single-Crystalline Films by a Solid-State Process Reviewed

    Daiji Ijuu, Toshio Kimura, Tomoaki Yamada, Hiroshi Funakubo

    JOURNAL OF THE AMERICAN CERAMIC SOCIETY   94 ( 10 )   3291 - 3295   2011.10

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    DOI: 10.1111/j.1551-2916.2011.04569.x

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  • Controlled Polarizability of One-Nanometer-Thick Oxide Nanosheets for Tailored, High-kappa Nanodielectrics Reviewed

    Osada Minoru, Takanashi Genki, Li Bao-Wen, Akatsuka Kosho, Ebina Yasuo, Ono Kanta, Funakubo Hiroshi, Takada Kazunori, Sasaki Takayoshi

    ADVANCED FUNCTIONAL MATERIALS   21 ( 18 )   3482 - 3487   2011.9

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    DOI: 10.1002/adfm.201100580

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  • Growth of epitaxial {100}-oriented KNbO3 - NaNbO3 solid solution films on (100)cSrRuO3//(100)SrTiO3 by hydrothermal method and their characterization Reviewed

    T. Shiraishi, H. Einishi, S. Yasui, M. Ishikawa, T. Hasegawa, M. Kurosawa, H. Uchida, Y. Sakashita, H. Funakubo

    Jpn. J. Appl. Phys.   50 ( 9 )   09ND11-1 - 09ND11-4   2011.9

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    DOI: 10.1143/JJAP.50.09ND11

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  • Erratum: Spontaneous polarization estimation from the soft mode in strain-free epitaxial polar axis-oriented Pb(Zr,Ti)O<inf>3</inf> thick films with tetragonal symmetry (Applied Physics Letters (2011) 98 (141914)) Reviewed

    Yoshitaka Ehara, Satoru Utsugi, Mitsumasa Nakajima, Tomoaki Yamada, Takashi Iijima, Hiroki Taniguchi, Mitsuru Itoh, Hiroshi Funakubo

    Applied Physics Letters   99 ( 12 )   2011.9

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    DOI: 10.1063/1.3643039

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  • X-ray diffraction study of electric-field-induced strains in polycrystalline BiFeO<inf>3</inf> thin films at low temperatures by using synchrotron radiation Reviewed

    Seiji Nakashima, Hironori Fujisawa, Masaru Shimizu, Osami Sakata, Tomoaki Yamada, Hiroshi Funakubo, Jung Min Park, Takeshi Kanashima, Masanori Okuyama

    Journal of the Korean Physical Society   59 ( 31 )   2556 - 2559   2011.9

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    DOI: 10.3938/jkps.59.2556

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  • Crystal Orientation Control of Bismuth Layer-Structured Dielectric Films Using Interface Layers of Perovskite-Type Oxides Reviewed

    Yohta Kondoh, Keiichi Sasajima, Mari Hayashi, Junichi Kimura, Itaru Takuwa, Yoshitaka Ehara, Hiroshi Funakubo, Hiroshi Uchida

    JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 9 )   2011.9

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    DOI: 10.1143/JJAP.50.09NA04

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  • Preferential Crystal Growth of (100)-Oriented BiFeO3 Films on Si Substrate Reviewed

    Mari HAYASHI, Shintaro YASUI, Hiroshi FUNAKUBO, Hiroshi UCHIDA

    IOP Conference Series: Materials Science and Engineering   18 ( 9 )   092033 - 1-4   2011.9

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    DOI: 10.1088/1757-899X/18/9/092033

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  • Buffer-layer-enhanced growth of a single-domain LaB6 (100) epitaxial thin film on a MgO (100) substrate via pulsed laser deposition Reviewed

    Y. Kato, H. Arai, R. Yamauchi, N. Tsuchimine, S. Kobayashi, K. Saeki, N. Takezawa, S. Kaneko, M. Mitsuhashi, H. Funakubo, M. Yoshimoto

    JOURNAL OF CRYSTAL GROWTH   330 ( 1 )   39 - 42   2011.9

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    DOI: 10.1016/j.jcrysgro.2011.07.001

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  • Crystal Orientation Control of Bismuth Layer-Structured Dielectric Films Using Interface Layers of Perovskite-Type Oxides Reviewed

    Yohta KOHDOH, Keiichi SASAJIMA, Mari HAYASHI, Junichi KIMURA, Itaru TAKUWA, Yoshitaka EHARA, Hiroshi FUNAKUBO, Hiroshi UCHIDA

    Japanese journal of applied physics   50 ( 9 )   09NA04-1 - 09NA04-5   2011.9

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    DOI: 10.1143/JJAP.50.09NA04

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  • Fabrication and Evaluation of Mn-Substituted Ba(Cu 1/3 Nb 2/3 )O 3 Ceramics Reviewed

    Yusuke KAMIMURA, Bong-Yeon LEE, Keisuke YAZAWA, Hiroshi FUNAKUBO, Takashi IIJIMA, Hiroshi UCHIDA

    IOP Conference Series: Materials Science and Engineering   18 ( 9 )   092038 - 1-4   2011.9

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    DOI: 10.1088/1757-899X/18/9/092038

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  • High Fatigue Endurance and Large Remanent Polarization in Pt/SrRuO3/BiFe0.95Mn0.05O3/SrRuO3/Pt Ferroelectric Capacitors Formed on SiO2-Coated Si Substrates Reviewed

    Jeong Hwan Kim, Hiroshi Funakubo, Hiroshi Ishiwara

    APPLIED PHYSICS EXPRESS   4 ( 8 )   2011.8

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    DOI: 10.1143/APEX.4.081501

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  • TEM Observation on Ferroelectric Domain Structures of PbTiO3 Epitaxial Films Reviewed

    Kenta Aoyagi, Takanori Kiguchi, Yoshitaka Ehara, Hiroshi Funakubo, Toyohiko J. Konno

    Key Engineering Materials   485   179 - 182   2011.7

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    DOI: 10.4028/www.scientific.net/KEM.485.179

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  • Ferroelectric Domain Configuration and Local Elastic Interaction with Misfit Dislocation in PbTiO3/SrTiO3 Epitaxial Thin Film Reviewed

    Takanori Kiguchi, Kenta Aoyagi, Yoshitaka Ehara, Hiroshi Funakubo, Tomoaki Yamada, Noritaka Usami, Toyohiko J. Konno

    Science and Technology of Advanced Materials   12 ( 3 )   034413-1 - 034413-9   2011.6

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    DOI: 10.1088/1468-6996/12/3/034413

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  • Diffraction contrast analysis of 90º and 180º ferroelectric domain structures of PbTiO3 thin films Reviewed International journal

    Kenta Aoyagi, Takanori Kiguchi, Yoshitaka Ehara, Tomoaki Yamada, Hiroshi Funakubo, Toyohiko J. Konno

    Science and Technology of Advanced Materials   12 ( 3 )   034403-1 - 034403-6   2011.5

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    DOI: 10.1088/1468-6996/12/3/034403

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  • Strong growth orientation dependence of strain relaxation in epitaxial (Ba,Sr)TiO3 films and the resulting dielectric properties Reviewed

    Tomoaki Yamada, Takafumi Kamo, Hiroshi Funakubo, Dong Su, Takashi Iijima

    JOURNAL OF APPLIED PHYSICS   109 ( 9 )   2011.5

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    DOI: 10.1063/1.3581203

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  • Thickness-dependent ferroelectric properties of Mn-doped BiFeO3 films formed on Pt and SrRuO3/Pt electrodes by RF Sputtering Reviewed

    Jeong Hwan Kim, Hiroshi Funakubo, Yoshihiro Sugiyama, Hiroshi Ishiwara

    CURRENT APPLIED PHYSICS   11 ( 3 )   S228 - S231   2011.5

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    DOI: 10.1016/j.cap.2010.11.062

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  • Enhancement of piezoelectric response in (100)/(001) oriented tetragonal PZT films by controlling tetragonality and volume fraction of the (001) orientation Reviewed

    Mitsumasa Nakajima, Syoji Okamoto, Hiroshi Nakaki, Tomoaki Yamada, Hiroshi Funakubo

    J. Appl. Phys.   109 ( 9 )   2011.5

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    DOI: 10.1063/1.3581190

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  • Comparison of Ferroelectric and Insulating Properties of Mn-Doped BiFeO3 Films Formed on Pt, SrRuO3/Pt, and LaNiO3/Pt Bottom Electrodes by Radio-Frequency Sputtering Reviewed

    Jeong Hwan Kim, Hiroshi Funakubo, Hiroshi Ishiwara

    JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 5 )   2011.5

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    DOI: 10.1143/JJAP.50.051501

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  • Measurement of Piezoelectric Transverse and Longitudinal Displacement with Atomic Force Microscopy for PZT Thick Films Reviewed

    Y. Kashiwagi, T. Iijima, T. Aiso, T. Yamamoto, K. Nishida, H. Funakubo, T. Nakajima, S. Okamura

    Mater. Res. Soc. Symp. Proc.   1318   mrsf10-1318-vv03-12   2011.5

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  • Synthesis of Mica Thin Film by Pulsed Laser Deposition Reviewed

    Nakasone Yuta, Nakai Hirokazu, Miyake Yumiko, Yamauchi Ryosuke, Tsuchimine Nobuo, Kobayashi Susumu, Sano Yoshifumi, Takezawa Nobutaka, Mitsuhashi Masahiko, Kaneko Satoru, Funakubo Hiroshi, Yoshimoto Mamoru

    APPLIED PHYSICS EXPRESS   4 ( 5 )   55502 - 055502-3   2011.5

  • Nano-strip grating lines self-organized by a high speed scanning CW laser Reviewed International journal

    Kaneko Satoru, Ito Takeshi, Akiyama Kensuke, Yasui Manabu, Kato Chihiro, Tanaka Satomi, Hirabayashi Yasuo, Mastuno Akira, Nire Takashi, Funakubo Hiroshi, Yoshimoto Mamoru

    NANOTECHNOLOGY   22 ( 17 )   175307 - 175307   2011.4

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  • Enhancement of magnetization at morphotropic phase boundary in epitaxial BiCoO3-BiFeO3 solid solution films grown on SrTiO3 (100) substrates Reviewed

    Hiroshi Naganuma, Shintaro Yasui, Ken Nishida, Takashi Iijima, Hiroshi Funakubo, Soichiro Okamura

    JOURNAL OF APPLIED PHYSICS   109 ( 7 )   07D917-1 - 07D917-3   2011.4

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  • Application of synchrotron-based reciprocal-space mapping at a fixed angular position to identification of crystal symmetry of Bi4Ti3O12 epitaxial thin films Reviewed

    Osami Sakata, Takayuki Watanabe, Hiroshi Funakubo

    JOURNAL OF APPLIED CRYSTALLOGRAPHY   44 ( 2 )   385 - 391   2011.4

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  • Spontaneous polarization estimation from the soft mode in strain-free epitaxial polar axis-oriented Pb(Zr,Ti)O-3 thick films with tetragonal symmetry Reviewed

    Yoshitaka Ehara, Satoru Utsugi, Mitsumasa Nakajima, Tomoaki Yamada, Takashi Iijima, Hiroki Taniguchi, Mitsuru Itoh, Hiroshi Funakubo

    APPLIED PHYSICS LETTERS   98 ( 14 )   2011.4

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  • Effect of CW laser annealing on silicon surface for application of power device Reviewed

    Satoru Kaneko, Takeshi Ito, Kensuke Akiyama, Manabu Yasui, Chihiro Kato, Satomi Tanaka, Yasuo Hirabayashi, Takeshi Ozawa, Akira Matsuno, Takashi Nire, Hiroshi Funakubo, Mamoru Yoshimoto

    World Academy of Science, Engineering and Technology   74   335 - 337   2011.2

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  • Epitaxial growth of (100)-oriented beta-FeSi2 film on 3C-SiC(100) plane Reviewed

    Akiyama Kensuke, Kadowaki Teiko, Hirabayashi Yasuo, Yoshimoto Mamoru, Funakubo Hiroshi, Kaneko Satoru

    JOURNAL OF CRYSTAL GROWTH   316 ( 1 )   10 - 14   2011.2

  • Effect of CW laser annealing on silicon surface for application of power device

    Satoru Kaneko, Takeshi Ito, Kensuke Akiyama, Manabu Yasui, Chihiro Kato, Satomi Tanaka, Yasuo Hirabayashi, Takeshi Ozawa, Akira Matsuno, Takashi Nire, Hiroshi Funakubo, Mamoru Yoshimoto

    World Academy of Science, Engineering and Technology   50   330 - 332   2011.2

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  • Growth of (111)-oriented epitaxial Bi(Mg<inf>0.5</inf>Ti <inf>0.5</inf>)O<inf>3</inf> films and their characterization

    Tanaka, H., Yamada, T., Yasui, S., Yamato, K., Wada, S., Funakubo, H.

    Key Engineering Materials   485   2011

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  • A New SrBi4Ti4O15/CaBi4Ti4O15 Thin Film Capacitor for Excellent Electric Stability Reviewed

    Shuhei Nomura, Kaoru Yamashita, Minoru Noda, Hiroshi Uchida, Hiroshi Funakubo

    2011 INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS (ISAF/PFM) AND 2011 INTERNATIONAL SYMPOSIUM ON PIEZORESPONSE FORCE MICROSCOPY AND NANOSCALE PHENOMENA IN POLAR MATERIALS   Vol. 59 ( No. 9 )   2011

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  • Preferential Crystal Growth of (100)-Oriented BiFeO3 Films on Si Substrate Reviewed

    M. Hayashi, S. Yasui, H. Funakubo, H. Uchida

    3RD INTERNATIONAL CONGRESS ON CERAMICS (ICC3): ADVANCES IN ELECTRO CERAMICS   18   2011

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    DOI: 10.1088/1757-899X/18/9/092033

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  • Growth of Orientation-Controlled Epitaxial KNbO3 Thin Film by Hydrothermal Method Reviewed

    Hiro Einishi, Mutsuo Ishikawa, Mitsumasa Nakajima, Shintaro Yasui, Tomoaki Yamada, Minoru Kurosawa, Hiroshi Funakubo

    ELECTROCERAMICS IN JAPAN XIV   485   199 - +   2011

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  • Intrinsic Characteristics of Bi(Zn1/2Ti1/2)O-3 - substituted Pb(Zr0.4Ti0.6)O-3 Thin Films Reviewed

    M. T. Chentir, Yoshitaka Ehara, Y. Sugiyama, Y. Tasaki, H. Ishiwara, H. Funakubo

    3RD INTERNATIONAL CONGRESS ON CERAMICS (ICC3): ADVANCES IN ELECTRO CERAMICS   18   2011

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    DOI: 10.1088/1757-899X/18/9/092008

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  • Dielectric Properties of Bismuth Layer-Structured Oxide Thin Films with Preferential Crystal Orientation at High-Temperature Reviewed

    Yuki Mizutani, Junichi Kimura, Itaru Takuwa, Tomoaki Yamada, Hiroshi Funakubo, Hiroshi Uchida

    ELECTROCERAMICS IN JAPAN XIV   485   191 - +   2011

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  • Rapid and high sensitive structure evaluation of ferroelectric films using micro-Raman spectroscopy: In-situ observation of stress accumulation and release in PbTiO3 films during first cooling process

    M. Nishide, M. Matsuoka, T. Tai, T. Katoda, H. Funakubo, K. Nishida, T. Yamamoto

    Materials Science and Engineering   Vol. 18   2011

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  • Real-space mapping of dynamic phenomena during hysteresis loop measurements: Dynamic switching spectroscopy piezoresponse force microscopy

    A. Kumar, O. S.Ovchinnikov, H. Funakubo, S. Jesse, S. V. Kalinin

    Appl. Phys. Lett.   Vol. 98   2011

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  • Fabrication and Evaluation of Mn-Substituted Ba(Cu1/3Nb2/3)O-3 Ceramics Reviewed

    Y. Kamimura, B. -Y. Lee, K. Yazawa, H. Funakubo, T. Iijima, H. Uchida

    3RD INTERNATIONAL CONGRESS ON CERAMICS (ICC3): ADVANCES IN ELECTRO CERAMICS   18   2011

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    DOI: 10.1088/1757-899X/18/9/092038

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  • Design of large piezoelectricity in novel piezoelectrics using high-pressure phase materials

    Yasui Shintaro, Nagata Jun-ichi, Morioka Hitoshi, Uchida Hiroshi, Kurosawa Minoru K., Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br>Preprints of Fall Meeting of The Ceramic Society of Japan   2011   317 - 317   2011

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    DOI: 10.14853/pcersj.2011F.0.317.0

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  • Incubation Time Free CVD-TiO2 Film Preparation Using Novel Precursor of Ti-DOT.

    Hirokazu Chiba, Ken-ichi Tada, Toshiki Yamamoto, Kohei Iwanaga, Atsushi Maniwa, Tadahiro Yotsuya, Noriaki Oshima, Hiroshi Funakubo

    Mater. Res. Soc. Symp. Proc.   Vol. 1288   2011

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  • Identification of crystal symmetry of Bi4Ti3O12 epitaxial thin films with (100)/(010) orientations by amodifiedmethod of synchrotron-based reciprocal-space mapping

    Osami Sakata, Takayuki Watanabe, Hiroshi Funakubo

    J. Appl. Cryst.   Vol. 44   2011

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  • Preparation of BiFeO3-Bi(Zn1/2Ti1/2)O3 films by chemical solution deposition

    HAYASHI MARI, UCHIDA HIROSHI, YASUI SHINTARO, FUNAKUBO HIROSHI

    Preprints of Annual Meeting of The Ceramic Society of Japan<br>Preprints of Fall Meeting of The Ceramic Society of Japan   2011   306 - 306   2011

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    DOI: 10.14853/pcersj.2011F.0.306.0

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  • Antiferrodistortive Structural Phase Transition in Compressively-strained Epitaxial SrTiO3 Film Grown on (La, Sr)(Al, Ta)O3 Substrate Reviewed

    T. Yamada, T. Kiguchi, A.K. Tagantsev, H. Morioka, T. Iijima, H. Ohsumi. Kimura, M. Osada, N. Setter, H. Funakubo

    Integrated Ferroelectrics   115   57 - 62   2010.12

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  • One-axis Oriented CaBi4Ti4O15 and SrBi4Ti4O15 Films Prepared on Silicon Wafer by Chemical Solution Deposition Technique Reviewed

    Yuki MIZUTANI, Hiroshi UCHIDA, Hiroshi FUNAKUBO, Seiichiro KODA

    Materials Research Society Symposium Proceedings   1199   147 - 152   2010.12

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    DOI: 10.1557/PROC-1199-F03-14

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  • Erratum: “Single crystal-like selection rules for unipolar-axis oriented tetragonal Pb(Zr,Ti)O3 thick epitaxial films” †Appl. Phys. Lett. 97, 11901 (2010) Reviewed

    Mitsumasa Nakajima, Takashi Fujisawa, Yoshitaka Ehara, Tomoaki Yamada, Hiroshi Funakubo, Hiroshi Naganuma, Soichiro Okamura, Ken Nishida, Takashi Yamamoto, Minoru Osada

    APPLIED PHYSICS LETTERS   97   189901 - 189901   2010.11

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  • In situ Raman spectroscopy for characterization of the domain contributions to electrical and piezoelectric responses in Pb(Zr, Ti)O-3 films Reviewed

    Nakajima Mitsumasa, Nakaki Hiroshi, Ehara Yoshitaka, Yamada Tomoaki, Nishida Ken, Yamamoto Takashi, Osada Minoru, Funakubo Hiroshi

    APPLIED PHYSICS LETTERS   97 ( 18 )   2010.11

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  • Synchrotron X-ray diffraction study on a single nanowire of PX-phase lead titanate Reviewed

    Yamada Tomoaki, Wang Jin, Sakata Osami, Sandu Cosmin S, He Zhanbing, Kamo Takafumi, Yasui Shintaro, Setter Nava, Funakubo Hiroshi

    Journal of the European Ceramic Society   30 ( 15 )   3259 - 3262   2010.11

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  • Engineered Interfaces of Artificial Perovskite Oxide Super lattices via Nanosheet Deposition Process Reviewed International journal

    Li Bao-Wen, Osada Minoru, Ozawa Tadashi C, Ebina Yasuo, Akatsuka Kosho, Ma Renzhi, Funakubo Hiroshi, Sasaki Takayoshi

    ACS NANO   4 ( 11 )   6673 - 6680   2010.11

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  • Growth of polar axis oriented tetragonal Pb(Zr,Ti)O-3 films on CaF2 substrates with transparent (La0.07Sr0.93)SnO3 Reviewed

    Utsugi Satoru, Ehara Yoshitaka, Tanaka Hidenori, Yamada Tomoaki, Funakubo Hiroshi, Uchida Hiroshi

    JOURNAL OF CRYSTAL GROWTH   312 ( 21 )   3127 - 3130   2010.10

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    DOI: 10.1016/j.jcrysgro.2010.07.032

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  • MOCVD growth and characterization of BiFeO3-Bi(Zn1/2Ti1/2)O-3 ferroelectric films Reviewed

    Yazawa Keisuke, Yasui Shintaro, Matsushima Masaaki, Uchida Hiroshi, Funakubo Hiroshi

    Materials Science and Engineering B-Advanced Functional Solid-State Materials   173 ( 1-3 )   14 - 17   2010.10

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  • Electrical properties and x-ray photoelectron spectroscopy studies of Bi(Zn0.5Ti0.5)O-3 doped Pb(Zr0.4Ti0.6)O-3 thin films Reviewed

    M. H. Tang, J. Zhang, X. L. Xu, H. Funakubo, Y. Sugiyama, H. Ishiwara, J. Li

    JOURNAL OF APPLIED PHYSICS   108 ( 8 )   2010.10

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  • Effect of Grain Size on Mechanical Properties of Full-Dense Pb(Zr,Ti)O3 Ceramics

    Miyoshi Tetsu, Funakubo Hiroshi

    Jpn J Appl Phys   49 ( 9 )   09MD13 - 09MD13-6   2010.9

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    The grain size dependence of mechanical properties was investigated in full-dense Pb(Zr,Ti)O3 (PZT) ceramics using a microindentation fracture method. Full-dense PZT ceramics with an average grain size ranging from 0.09 to 2.3 μm were successfully prepared by a novel compaction method based on aerosol deposition (AD). Vickers hardness ($H_{\text{v } }$) increased with decreasing grain size and the Hall–Petch relationship ($H_{\text{v } }=H_{\text{v0 } }+kd^{-1/2}$) was confirmed over almost the entire grain size range investigated, which indicates that grain size could be the determining factor of hardness in full-dense PZT ceramics. On the other hand, fracture toughness ($K_{\text{C } }$) decreased with decreasing grain size below the critical grain size of 1.0 μm. The critical grain size was consistent with that below which the volume fraction of the tetragonal phase ($V_{\text{Tet } }$) decreased with decreasing grain size, which indicates that ferroelastic 90° domain switching is a viable toughening mechanism in PZT ceramics. In this study, we have demonstrated that, with suitable microstructural control, the PZT ceramics with ultra-high strength for contact situations can be realized without any sacrifice in piezoelectric properties.

    DOI: 10.1143/JJAP.49.09MD13

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  • Crystal Structure and Dielectric Property of Bismuth Layer-Structured Dielectric Films with c-Axis Preferential Crystal Orientation Reviewed

    Y. Mizutani, T. Kiguchi, T. J. Konno, H. Funakubo, H. Uchida

    Japanese Journal of Applied Physics   49 ( 9 )   09MA02-1 - 09MA02-6   2010.9

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    Thin films of bismuth layer-structured dielectrics (BLSDs), CaBi4Ti4O15, and SrBi4Ti4O15, were prepared by a chemical solution deposition (CSD) technique on various substrates, such as (111)Pt/TiO2/(100)Si, (100)LaNiO3/(111)Pt/TiO2/(100)Si, and $\text{(100)SrRuO$_{3}$}\parallel \text{(100)SrTiO$_{3}$}$ substrates. Conductive perovskite oxide LaNiO3 with (100) preferential crystal orientation was introduced into the interface between the BLSD film and the (111)Pt/TiO2/(100)Si substrate to control the crystal orientation of BLSD by lattice matching between pseudo-perovskite blocks in the BLSD crystal and the (100)LaNiO3 plane with the perovskite structure. The ($00l$) planes of BLSD crystals were preferentially oriented on the substrate surface of the (100)LaNiO3/(111)Pt/TiO2/(100)Si, whereas randomly-oriented BLSD crystals with lower crystallinity were only obtained on the surface of (111)Pt/TiO2/(100)Si substrate. The (001)-oriented BLSD films exhibited the leakage current densities below $10^{-7}$ A/cm2 at $\pm 50$ kV/cm, which is significantly lower than those for randomly-oriented films, above $10^{-6}$ A/cm2, The room-temperature dielectric constants ($\varepsilon_{\text{r } }$) of CaBi4Ti4O15 and SrBi4Ti4O15 thin films on the (100)LaNiO3/(111)Pt/TiO2/(100)Si substrate were both approximately 250, while those on the $\text{(100)SrRuO$_{3}$}\parallel \text{(100)SrTiO$_{3}$}$ substrate were approximately 220. The temperature dependence of the capacitances for the CaBi4Ti4O15 and SrBi4Ti4O15 films on the (100)LaNiO3/(111)Pt/TiO2/(100)Si substrate were approximately +17 and +10%, respectively, in the temperature range from 25 to 400 °C. These values were slightly larger than those of epitaxial BLSD films, but smaller than those of (Ba,Sr)TiO3 films.

    DOI: 10.1143/JJAP.49.09MA02

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  • Effect Of Films Thickness and Crystal Orientation on the Constituent Phase in Epitaxial BiFeO3-BiCoO3 Films Grown on SrTiO3 Substrates Reviewed

    Shintaro YASUI, Keisuke YAZAWA, Tomoaki YAMADA, Ken NISHIDA, Hiroshi UCHIDA, Masaki AZUMA, Hiroshi FUNAKUBO

    Japanese journal of applied physics   49 ( 9 )   09MB04-1 - 09MB04-5   2010.9

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    DOI: 10.1143/JJAP.49.09MB04

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  • Robust High-kappa Response in Molecularly Thin Perovskite Nanosheets Reviewed International journal

    Osada Minoru, Akatsuka Kosho, Ebina Yasuo, Funakubo Hiroshi, Ono Kanta, Takada Kazunori, Sasaki Takayoshi

    ACS NANO   4 ( 9 )   5225 - 5232   2010.9

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  • Piezoelectric anomalies at the ferroelastic phase transitions of lead-free tungsten bronze ferroelectrics Reviewed

    Takanori MATSUDA, Toshihiro IFUKU, Bong-Yeon LEE, Takashi IIJIMA, Hiroshi FUNAKUBO, Houzhona YU, Nobuhiro KUMADA

    J. Ceram. Soc. Japan   118 ( 8 )   717 - 721   2010.8

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    IF:1.023

    DOI: 10.2109/jcersj2.118.717

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  • Composition dependence of crystal structure and electrical properties for epitaxial films of Bi(Zn1/2Ti1/2)O-3-BiFeO3 solid solution system Reviewed

    Yazawa Keisuke, Yasui Shintaro, Morioka Hitoshi, Yamada Tomoaki, Uchida Hiroshi, Gruverman Alexei, Funakubo Hiroshi

    Journal of the Ceramic Society of Japan   118 ( 1380 )   659 - 663   2010.8

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  • Large Lattice Misfit on Epitaxial Thin Film: Coincidence Site Lattice Expanded on Polar Coordinate System Reviewed

    Kaneko Satoru, Akiyama Kensuke, Ito Takeshi, Yasui Manabu, Soga Masayasu, Hirabayashi Yasuo, Funakubo Hiroshi, Yoshimoto Mamoru

    JAPANESE JOURNAL OF APPLIED PHYSICS   49 ( 8 )   2010.8

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  • In-situ observation of a MEMS-based Pb(Zr,Ti)O-3 micro cantilever using micro-Raman spectroscopy Reviewed

    Masamichi Nishide, Maresuke Kuzuhara, Takeshi Tai, Takashi Katoda, Hitoshi Morioka, Hiroshi Funakubo, Ken Nishida, Takashi Yamamoto

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   118 ( 1380 )   644 - 647   2010.8

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    DOI: 10.2109/jcersj2.118.644

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  • Orientation control of (001) and (101) in epitaxial tetragonal Pb(Zr,Ti)O-3 films with (100)/(001) and (110)/(101) mixture orientations Reviewed

    Utsugi Satoru, Fujisawa Takashi, Ehara Yoshitaka, Yamada Tomoaki, Yasui Shintaro, Chentir Mohamed-Tahar, Morioka Hitoshi, Iijima Takashi, Funakubo Hiroshi

    Journal of the Ceramic Society of Japan   118 ( 1380 )   627 - 630   2010.8

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    DOI: 10.2109/jcersj2.118.627

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  • Geometric Phase Analysis of Nano-Scale Strain Fields Around 90° Domains in PbTiO3/SrTiO3 Epitaxial Thin Film Reviewed

    Takanori Kiguchi, Kenta Aoyagi, Toyohiko J. Konno, Satoru Utsugi, Tomoaki Yamada, Hiroshi Funakubo

    Materials Research Society Symposium Proceeding   1199   1199-F09-08-01 - 1199-F09-08-06   2010.7

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    DOI: 10.1557/PROC-1199-F09-08

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  • Tetragonal Distortion Controllability by Dopant in Epitaxial Bi(Zn1/2Ti1/2)O3-BiFeO3Thin Films

    Yasui Shintaro, Yazawa Keisuke, Yamada Tomoaki, Morioka Hitoshi, Uchida Hiroshi, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br>Preprints of Fall Meeting of The Ceramic Society of Japan   2010   2P015 - 2P015   2010

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    We fabricated novel candidate, Bi(Zn1/2Ti1/2)O3-BiFeO3for ferro/piezoelectric materials. However, Tetragonal distortion of 1.22 is too higher for ferroelectric switching than that of PbTiO3 and need to decrease. In the present study, tetragonal distortion of Bi(Zn1/2Ti1/2)O3-BiFeO3 was reduced by Bi(Mg1/2Ti1/2)O3 substitution. In addition, new peak which had non tetragonal phase was appeared at x = 0.30 composition in xBi(Mg1/2Ti1/2)O3-(1-x)Bi(Zn1/2Ti1/2)O3-BiFeO3 thin films.

    DOI: 10.14853/pcersj.2010S.0.2P015.0

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  • A-Site-Modified Perovskite Nanosheets and Their Integration into High-kappa Dielectric Thin Films with a Clean Interface Reviewed

    Li Bao-Wen, Osada Minoru, Ozawa Tadashi C, Akatsuka Kosho, Ebina Yasuo, Ma Renzi, Ono Kanta, Funakubo Hiroshi, Sasaki Takayoshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   49 ( 9 )   09MA01 - 09MA01-5   2010

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    DOI: 10.1143/JJAP.49.09MA01

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  • Effect of Film Thickness and Crystal Orientation on the Constituent Phase in Epitaxial BiFeO3-BiCoO3 Films Grown on SrTiO3 Substrates Reviewed

    Yasui Shintaro, Yazawa Keisuke, Yamada Tomoaki, Nishida Ken, Uchida Hiroshi, Azuma Masaki, Funakubo Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   49 ( 9 )   09MB04 - 09MB04-5   2010

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    The crystal symmetries of epitaxial ($1-x$)BiFeO3–$x$BiCoO3 films ($x=0--0.46$) grown on (100)SrTiO3, (110)SrTiO3, and (111)SrTiO3 substrates covered with/without SrRuO3 layers were systematically investigated as a function of film thickness and the crystal orientation of the substrates. Raman analysis was an effective method of crystal symmetry research on epitaxial BiFeO3–BiCoO3 films. Crystal symmetry was changed from being rhombohedral to tetragonal through the mixture of these symmetries with increasing BiCoO3 content irrespective of film thickness and the crystal orientation. However, the constituent phase was strongly depended on film and the crystal orientation of the substrates. The perovskite single phase was observed up to a higher $x$ for the films grown on (100)SrTiO3 substrates than for those grown on (110)SrTiO3 and (111)SrTiO3 substrates. On the other hand, the constituent phase of the films grown on (111)SrTiO3 substrates was similar to that of the strain free powders obtained by high-pressure synthesis.

    DOI: 10.1143/JJAP.49.09MB04

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  • Electronic, Structural, and Piezoelectric Properties of BiFe1-xCoxO3 Reviewed

    Miura Kaoru, Kubota Makoto, Azuma Masaki, Funakubo Hiroshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   49 ( 9 )   09ME07 - 09ME07-4   2010

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    The electronic, structural, and piezoelectric properties of perovskite BiFe1-xCoxO3 (BFCO) have been investigated using a first-principles calculation with optimized structures. Our calculated results show that the most stable structure changes from rhombohedral to monoclinic to tetragonal as $x$ increases and that piezoelectric constants show maximums at the rhombohedral structure. These results are qualitatively in good agreement with the experimental results. However, even with the randomness of Fe and Co atoms, the piezoelectric constants do not show maximums at the monoclinic structure. This result suggests that the morphotropic phase boundary (MPB) does not appear in BFCO owing to a much larger $c/a$ ratio in monoclinic and tetragonal structures.

    DOI: 10.1143/JJAP.49.09ME07

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  • Structural Property and Electric Field Response of a Single Perovskite PbTiO3 Nanowire Using Micro X-ray Beam Reviewed

    Yamada Tomoaki, Wang Jin, Sakata Osami, Tanaka Hidenori, Ehara Yoshitaka, Yasui Shintaro, Setter Nava, Funakubo Hiroshi

    Japanese Journal of Applied Physics   49 ( 9 )   09MC09 - 09MC09-4   2010

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    The structural property and electric field response of a single perovskite PbTiO3 nanowire were investigated by means of synchrotron X-ray diffraction (XRD) with a micro X-ray beam. XRD $\theta$–$2\theta$ patterns and Raman spectra confirmed the formation of the perovskite phase of PbTiO3 by annealing the PX-phase of Pb–Ti–O nanowires at 600 °C. In addition, the obtained nanowires showed multi-domain/grain features. By focusing the micro X-ray beam on a single perovskite PbTiO3 nanowire, both ends of which are connected to electrodes, the lattice distortion under the electric field was observed.

    DOI: 10.1143/jjap.49.09mc09

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  • Single-crystal-like Selection Rules for Unipolar-axis Oriented Tetragonal Pb(Zr,Ti)O3 Thick Epitaxial Films Reviewed

    M.Nakajima, T.Fujisawa, Y.Ehara T.Yamada, H.Funakubo, H.Naganuma, S.Okamura, K.Nishida, T.Yamamoto, M.Osada

    Applied Physics Letters   97   111901   2010

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  • Chemical Vapor Deposition of Ferroelectric Thin Films: a Critical Review Reviewed International journal

    Hiroshi Funakubo, Shintaro Yasui, Mutsuo Ishikawa, Tomoaki Yamada

    Ferroelectric Thin Films at Microwave Frequencies   172 - 182   2010

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  • Process-dependent coercive fields in undoped and Mn-doped BiFeO3 films formed on SrRuO3/Pt(111) electrodes by rf sputtering

    Jeong Hwan Kim, Hiroshi Funakubo, Yoshihiro Sugiyama, Hiroshi Ishiwara

    Mater. Res. Soc. Symp. Proc.   Vol. 1199   2010

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  • Effect of Deposition Time on Film Thickness and Their Properties for Hydrothermally-Grown Epitaxial KNbO3 Thick Films Reviewed

    Mutsuo Ishikawa, Hiro Einishi, Mitsumasa Nakajima, Tomohito Hasegawa, Takeshi Morita, Yoshifumi Saijo, Minoru Kurosawa, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS   49 ( 7 )   2010

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    DOI: 10.1143/JJAP.49.07HF01

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  • Solution-Based Fabrication of Perovskite Nanosheet Films and Their Dielectric Properties Reviewed

    Li Bao-Wen, Osada Minoru, Ozawa Tadashi C, Ma Renzhi, Akatsuka Kosho, Ebina Yasuo, Funakubo Hiroshi, Ueda Shigenori, Kobayashi Keisuke, Sasaki Takayoshi

    JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 9 )   09KA15 - 09KA15-5   2009.9

  • Evaluation of Relative Volume Fraction of Tetragonal Phase and Rhombohedral Phase in Pb(Zr,Ti)O-3 Film by Raman Spectroscopy Reviewed

    Nishide Masamichi, Takeuchi Hiroshige, Tai Takeshi, Katoda Takashi, Yokoyama Shintaro, Yasui Shintaro, Funakubo Hiroshi, Nishida Ken, Yamamoto Takashi

    Integrated Ferroelectrics   112   33 - 41   2009

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    DOI: 10.1080/10584587.2009.484672

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  • Preparation and Characterization of BiFeO_3_ Based Thin Films Grown by MOCVD Reviewed International journal

    Hiroshi Funakubo, Shintaro Yasui, Tomoaki Yamada, Mutsuo Ishikawa

    Mater. Integ.   vol. 22 ( No. 2 )   25 - 31   2009

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  • Solution-Based Fabrication of High-k Dielectrics Using Oxide Nanosheets Reviewed

    Osada Minoru, Akatsuka Kosho, Ebina Yasuo, Funakubo Hiroshi, Takada Kazunori, Sasaki Takayoshi

    PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 7   25 ( 6 )   349 - 352   2009

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    DOI: 10.1149/1.3206633

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  • Degradation-free dielectric property using bismuth layer-structured dielectrics having natural superlattice structure(<Special Article>The 62th CerSJ Awards for Academic Achievement in Ceramic Science and Technology)

    FUNAKUBO Hiroshi

    Journal of the Ceramic Society of Japan   116 ( 1360 )   1249 - 1254   2008.12

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    Degradation -free dielectric property was obtained by using films of bismuth layer-structured dielectrics (BLSDs) having a natural superlattice structure. Investigation of the effects of the stack direction of the bismuth oxide and pseudoperovskite layers on the dielectric properties of c-axis-oriented epitaxial BLSD films revealed that those with an even number of octahedra in the pseudoperovskite layer did not show significant degradation in the dielectric constant and retained good insulating characteristics when the film thickness was decreased despite the increased strain applied to the film. This was found not only in epitaxially grown films but also in one-axis-oriented ones with in-plane random orientation. In addition, films with a-/b-axis-oriented epitaxial BLSDs can be used a mold with a periodic nano-structure.

    DOI: 10.2109/jcersj2.116.1249

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  • Epitaxially Grown Ferroelectric Thin Films for Memory Applications Reviewed International journal

    Hiroshi Funakubo, Takahiro Oikawa, Shintaro Yokoyama, Kuniharu Nagashima, Hiroshi Nakaki, Takashi Fujisawa, Rikyu Ikariyama, SHintaro Yasui, Keisuke Saito, Hitoshi Morioka, Hee Han, Sunggi Baik, Yong Kwan Kim, Toshimasa Suzuki

    Phase Transition   vol. 81 ( No. 7 )   667 - 678   2008

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  • Degradation free Dielectric Property Using Bismuth Layer structure Dielectrics Having Natural Superlattice Structure Reviewed

    舟窪 浩

    J. Ceram. Soc. Jpn 116(12)   2008

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  • Nanostructural Characterization of Surfaces, Interfaces, and Thinfilms using X-ray Reciprocal-Lattice Space Imaging

    SAKATA Osami, YOSHIMOTO Mamoru, MIKI Kazushi, NAKAMURA Masashi, FUNAKUBO Hiroshi

    X-RAYS   49 ( 5 )   292 - 299   2007.10

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    We have developed a nondestructive analysis method, which is named X-ray reciprocallattice space imaging, based on synchrotron diffraction for quickly characterizing a crystalline nanometer-scale structure in a non-vacuum environment. The basic idea behind the method is that the reciprocal lattice of 1 D or 2D structures are an array of sheets or rods, respectively. Thus the reciprocal-lattice space can be recorded for a fixed sample with a 2D X-ray detector fixed. We successfully demonstrated that the method was applicable to structural evaluation of ultrathin NiO wires on a sapphire surface in air, Bi nanolines buried in Si, an interfacial structure of a Au electrode in solution, and a thinfilm of Bi4Ti3O12.

    DOI: 10.5940/jcrsj.49.292

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  • [国際会議proceedings] Influence of Pb and La Contents on the Lattice Configuration of La-Substituted Pb(Zr0.65, Ti0.35)O3 Films Reviewed

    Hiromi Shima, Ken Nishida, Hiroshi Funakubo, Takashi Iijima, Takashi Katoda, Hiroshi Naganuma, Soichiro Okamura

    Proceedings of the 16th International Symposium on the Application of Ferroelectrics   29PS   B-8   2007.5

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    DOI: 10.1109/ISAF.2007.4393175

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  • Preparation and characterization of Bi-perovskite oxide films for piezo applications Reviewed

    Yasui Shintaro, Naganuma Hiroshi, Okamura Soichiro, Iijima Takashi, Nishida Ken, Katoda Takashi, Uchida Hiroshi, Koda Seiichiro, Funakubo Hiroshi, IEEE

    2007 Sixteenth Ieee International Symposium on the Applications of Ferroelectrics, Vols 1 and 2   102 - +   2007

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    DOI: 10.1109/ISAF.2007.4393180

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  • Analysis of domain structure of epitaxial Pb(Zr,Ti)O3 films applied electric field by 2D-XRD Reviewed

    Hitoshi Morioka, Keisuke Saito, Toshiyuki Kurosawa, Hiroshi Nakaki, Rikyu Ikariyama, Hiroshi Funakubo

    IEEE International Symposium on Applications of Ferroelectrics   340 - 343   2007

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    DOI: 10.1109/ISAF.2007.4393259

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  • Bi-based ferroelectric thin films with enhanced polarization by rare-earth modification Reviewed

    Hiroshi Uchida, Ken Nishida, Minoru Osada, Funakubo, Seiichiro Koda

    2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2   138 - +   2007

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    DOI: 10.1109/ISAF.2007.4393194

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  • Substrate effects on the novel domain structure of (100)/(001)-oriented epitaxial PbTiO3 thick films Reviewed

    Rikyu Ikariyarna, Hiroshi Nakaki, Yong Kwan Kim, Ken Nishida, Keisuke Saito, Hiroshi Funakubo

    2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2   357 - +   2007

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  • Structural analysis in (100)/(001)-oriented epitaxial lead titanate thick films grown by MOCVD for MEMS application Reviewed

    Hiroshi Nakaki, Rikyu Ikariyama, Yong Kwan Kim, Shintaro Yokoyama, Ken Nishida, Alexei Gruverman, Stephen Streiffer, Keisuke Saito, Hiroshi Funakubo

    2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2   469 - +   2007

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  • High Performance in PIezoelectric and Advanced Applied Technology Reviewed International journal

    Hiroshi Funakubo, Shintaro Yasui

    MOCVD Method Chaper 2, Section 6   168 - 178   2007

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  • Structural and ferroelectric properties of BiFeO3-BiCoO3 solid solution films Reviewed

    Naganuma Hiroshi, Shimura Nozomi, Shima Hiromi, Yasui Shintaro, Nishida Ken, Iijima Takashi, Funakubo Hiroshi, Okamura Soichiro, IEEE

    2007 Sixteenth Ieee International Symposium on the Applications of Ferroelectrics, Vols 1 and 2   428 - +   2007

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    DOI: 10.1109/ISAF.2007.4393288

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  • Effect of the strain from the substrate on tunability of (100) one-axis oriented (Ba0.5Sr0.5)TiO3 thin films Reviewed

    Shinichi Ito, Hiroshi Funakubo, Ivoyl P. Koutsaroff, Marina Zelner, Andrew Cervin-Lawry

    2007 SIXTEENTH IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRICS, VOLS 1 AND 2   198 - +   2007

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  • Formation of BiFeO3-BiScO3 thin films and their electrical properties Reviewed

    Yasui Shintaro, Uchida Hiroshi, Nakaki Hiroshi, Funakubo Hiroshi, Koda Seiichiro

    Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers   45 ( 9B )   7321 - 7324   2006.9

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    DOI: 10.1143/JJAP.45.7321

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  • Impact of SrRuO3/LaNiO3 doubly-stacked bottom electrode on the characteristics of c-axis-oriented CaBi4Ti 4O15 films

    Kenji Takahashi, Muneyasu Suzuki, Shoji Okamoto, Hiroshi Funakubo

    Ceramic Transactions   174   155 - 164   2006

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  • Effect of thermal treatment on oxygen stoichiometry and transport properties of SrRuO<inf>3</inf> thin films Reviewed

    Joe Sakai, Nobuaki Ito, Shin Ichi Ito, Kenji Takahashi, Hiroshi Funakubo

    Applied Physics Letters   89 ( 24 )   2006

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    DOI: 10.1063/1.2408649

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  • Thin Film Characterization using High-resolution X-ray Diffractometer with Multi Dimensional Detectors Reviewed

    Keisuke Saito, Toshiyuki Kurosawa, Sadao Ueki, Hiroshi Funakubo

    Shinku/Journal of the Vacuum Society of Japan   49 ( 2 )   90 - 96   2006

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  • ペロブスカイト酸化物基強誘電体薄膜における巨大分極誘起への挑戦 Invited Reviewed

    内田寛, 舟窪浩, 幸田清一郎

    未来材料   5 ( 11 )   44 - 50   2005.11

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  • 薄膜コンデンサ材料の開発

    舟窪浩, 高橋健治, 小島隆志, 渡辺隆之, 鈴木宗泰

    化學工業   56 ( 7 )   525 - 529   2005.7

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  • Ferroelectric Thin Films XⅡ

    Susanne Hoffmann, Hiroshi Funakubo, Vikram Joshi, Angus I. Kingon, Ivo P. Koutsaroff

    2004

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  • 完全分極軸配向PZT薄膜による自発分極値の見積もり

    舟窪浩, 森岡仁, 及川貴弘, 横山信太郎

    32   2004

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  • Sample geometry effects on electric-field-induced displacements in piezoelectric thin films measured by atomic force microscopy Reviewed

    H Okino, H Matsuda, T Iijima, S Yokoyama, H Funakubo, T Yamamoto

    FERROELECTRIC THIN FILMS XII   784   559 - 564   2004

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  • Ti-site substitution using the higher-valent cation for enhancing the ferroelectric properties of Nd3+-substituted bismuth titanate thin films Reviewed

    H Uchida, S Koda, H Matsuda, T Iijima, T Watanabe, H Funakubo

    FERROELECTRIC THIN FILMS XII   784   207 - 212   2004

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  • Effect of Deposition Temperature on the Characteristics of Hafnium Oxide Films Deposited by MOCVD using Amide Precursor Reviewed

    K.Takahashi, H.Funakubo, S.Hino, M.Nakayama, N.Oohashi, T.Kiguchi, E.Tokumitsu

    Journal of Material Research   19 ( 2 )   584 - 589   2004

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    DOI: 10.1557/jmr.2004.19.2.584

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  • Property design of SrBi2Ta2O9 by defect engineering

    Noguchi, Y, Miyayama, M, HoffmannEifert, S, Funakubo, H, Joshi, V, Kingon, AI, Koutsaroff, IP

    Ferroelectric Thin Films Xii   784   2004

  • Fatigue-free RuO2/Pb(Zr,Ti)O-3/RuO2 capacitor prepared by metalorganic chemical vapor deposition at 395 degrees C Reviewed

    G Asano, H Morioka, H Funakubo, T Shibutami, N Oshima

    APPLIED PHYSICS LETTERS   83 ( 26 )   5506 - 5508   2003.12

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    DOI: 10.1063/1.1635964

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  • Bi3-xMxTiTaO9 (M = La or Nd) ceramics with high mechanical quality factor Qm Reviewed

    M Suzuki, H Nagata, J Ohara, H Funakubo, T Takenaka

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   42 ( 9B )   6090 - 6093   2003.9

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  • Electrical properties of (Ca,Sr)Bi4Ti4O15 thin films fabricated using a chemical solution deposition method Reviewed

    H Uchida, K Sakurai, Okada, I, H Matsuda, T Iijima, T Kojima, T Watanabe, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   42 ( 9B )   5990 - 5993   2003.9

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    DOI: 10.1143/JJAP.42.5990

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  • Compositional dependence of electrical properties of highly (100)-/(001)-oriented Pb(Zr,Ti)O-3 thick films prepared on Si-substrates by metalorganic chemical vapor deposition Reviewed

    S Yokoyama, Y Honda, H Morioka, G Asano, T Oikawa, T Iijima, H Matsuda, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   42 ( 9B )   5922 - 5926   2003.9

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    DOI: 10.1143/JJAP.42.5922

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  • Synthesis and Electrical Properties of Sr- and Nb-Cosubstituted Bi4-xSrxTi3-xNbxO12 Polycrystalline Thin Films Reviewed

    Hirofumi MATSUDA, Takashi IIJIMA, Hiroshi UCHIDA, Isao OKADA, Takayuki WATANABE, Hiroshi FUNAKUBO, Minoru OSADA, Masato KAKIHANA

    Jpn. J. Apply. Phys.   42 ( 8 )   949 - 952   2003.8

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    DOI: 10.1143/JJAP.42.L949

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  • Long-Range Lattice Matching between (100)/(010) Bismuth-Layered Perovskite Structure and (101) Rutile Structure Reviewed

    T. Watanabe, K. Saito, M. Osada, T. Suzuki, M. Fujimoto, M. Yoshimoto, A. Sasaki, J. Liu, M. Kakihana, H. Funakubo

    Mat. Res. Soc. Symp. Proc.   748   U2.4.1 - 6   2003.4

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  • Fabrication of ion-cosubstituted bismuth titanate thin films by chemical solution deposition method Reviewed

    H Uchida, Okada, I, H Matsuda, T Iijima, T Watanabe, H Funakubo

    INTEGRATED FERROELECTRICS   52   41 - 54   2003

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    DOI: 10.1080/10584580390254105

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  • Film thickness dependence of electrical properties for Pb(Zr,Ti)O-3 thin films prepared on (111)Ir/TiO2/SiO2/Si and (111)Pt/TiO2/SiO2/Si substrates by pulsed-metalorganic chemical vapor deposition Reviewed

    T Oikawa, H Funakubo, H Morioka, K Saito

    INTEGRATED FERROELECTRICS   59   1421 - 1428   2003

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    DOI: 10.1080/10584580390259867

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  • Self-organized (100)-/(001)-preferred orientation in Pb(Zr,Ti)O-3 films grown on polycrystalline substrates by metalorganic chemical vapor deposition Reviewed

    S Yokoyama, T Ozeki, T Oikawa, H Funakubo

    INTEGRATED FERROELECTRICS   59   1429 - 1436   2003

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    DOI: 10.1080/10584580390259885

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  • In-situ Observation of the Domain Dynamics of Piezoelectric Films Under Applied Electric Field

    Hiroshi Funakubo, Shintaro Yokoyama

    12   2003

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  • Capacitor applications of c-axis-oriented bismuth layer structured ferroelectric thin films Reviewed

    T Kojima, T Watanabe, H Funakubo, Y Sakashita, T Oikawa

    27TH INTERNATIONAL COCOA BEACH CONFERENCE ON ADVANCED CERAMICS AND COMPOSITES: B   24 ( 4 )   57 - 64   2003

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  • Low temperature preparation of high-quality Pb(Zr,Ti)O-3 films by metal organic chemical vapor deposition with high reproducibility Reviewed

    H Funakubo, K Nagashima, M Aratani, K Tokita, T Oikawa, T Ozeki, G Asano, K Saito

    FERROELECTRIC THIN FILMS X   688   3 - 13   2002

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  • Synthesis and ferroelectric properties of Sr- and Nb-codoped Bi4-xSrxTi3-xNbxO12 thin films by sol-gel method Reviewed

    H Matsuda, T Iijima, H Uchida, Okada, I, T Watanabe, H Funakubo

    FERROELECTRIC THIN FILMS X   688   107 - 111   2002

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  • Fabrication of V-substituted (Bi,M)(4)Ti3O12 [M = lanthanoids] thin films by chemical solution deposition method Reviewed

    H Uchida, H Yoshikawa, Okada, I, H Matsuda, T Iijima, T Watanabe, H Funakubo

    FERROELECTRIC THIN FILMS X   688   41 - 46   2002

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  • Hetero-epitaxial growth of (1, 0, m+1) one axis-oriented bismuth layered structured ferroelectrics thin films directly crystallized by MOCVD Reviewed

    N Nukaga, T Watanabe, T Sakai, T Suzuki, Y Nishi, M Fujimoto, H Funakubo

    FERROELECTRIC THIN FILMS X   688   35 - 40   2002

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  • Photoluminescence quenching by optical bias in AlGaAs/GaAs single quantum wells

    Tomohiro Sakai, Takayuki Watanabe, Yasuo Cho, Kaori Matsuura, Hiroshi Funakubo

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   40 ( 11 )   6477 - 6480   2001.11

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  • Epitaxial-grade polycrystalline Pb(Zr,Ti)O-3 film deposited at low temperature by pulsed-metalorganic chemical vapor deposition Reviewed

    M Aratani, T Oikawa, T Ozeki, H Funakubo

    APPLIED PHYSICS LETTERS   79 ( 7 )   1000 - 1002   2001.8

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  • Preparation of Bi2WO6 thin films by metalorganic chemical vapor deposition and their electrical properties Reviewed

    K Ishikawa, T Watanabe, H Funakubo

    THIN SOLID FILMS   392 ( 1 )   128 - 133   2001.7

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  • Growth of beta-FeSi2 thin film on Si (111) by metal-organic chemical vapor deposition Reviewed

    K Akiyama, S Ohya, H Takano, N Kieda, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   40 ( 5A )   L460 - L462   2001.5

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  • Domain structure and residual-strain characterization of epitaxial Pb(ZrxTi1-x)O-3 Thin films Reviewed

    K Saito, Yamaji, I, T Akai, M Aratani, K Nagashima, H Funakubo

    PROCEEDINGS OF THE 2001 12TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS I AND II   913 - 916   2001

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  • Orientation dependence of ferroelectricity of epitaxially grown Pb(ZrxTi1-x)O-3 thin films prepared by metalorganic chemical vapor deposition Reviewed

    H Funakubo, K Nagashima, M Aratani

    PROCEEDINGS OF THE 2001 12TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, VOLS I AND II   953 - 956   2001

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  • Characteristics of Pb(Zr,Ti)O-3 thin films prepared on various substrates by source gas pulse-introduced metalorganic chemical vapor deposition Reviewed

    M Aratani, H Funakubo

    FERROELECTRICS   260 ( 1-4 )   413 - 418   2001

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  • Thermal stability of Pb(C11H19O2)(2) used as the lead source in MOCVD Reviewed

    K Nagashima, H Funakubo, S Seki, Y Sawada, Y Miura, N Higuchi, H Matchida

    CHEMICAL VAPOR DEPOSITION   6 ( 6 )   311 - 314   2000.11

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  • Thermal stability of Pb(C<inf>11</inf>H<inf>19</inf>O<inf>2</inf>)<inf>2</inf> used as the lead source in MOCVD

    K. Nagashima, H. Funakubo, S. Seki, Y. Sawada, Y. Miura, N. Higuchi, H. Matchida

    Advanced Materials   12 ( 22 )   311 - 314   2000.11

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  • Synthesis of new liquid mixed Sr-Ta and Sr-Nb alkoxides as CVD precursors for metal oxide thin films Reviewed

    N Kadokura, Y Okuhara, M Mitsuya, H Funakubo

    CHEMICAL VAPOR DEPOSITION   6 ( 5 )   225 - +   2000.10

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  • Improvement of property of Pb(ZrxTi1-x)O-3 thin film prepared by source gas pulse-introduced metalorganic chemical vapor deposition Reviewed

    K Nagashima, M Aratani, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   39 ( 10A )   L996 - L998   2000.10

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  • Synthesis of new liquid mixed Sr-Ta and Sr-Nb alkoxides as CVD precursors for metal oxide thin films

    H. Kadokura, Y. Okuhara, M. Mitsuya, H. Funakubo

    Advanced Materials   12 ( 19 )   225 - 227   2000.10

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  • Orientation control of metalorganic chemical vapor deposition-Bi4Ti3O12 thin film by sequential source gas supply method Reviewed

    T Watanabe, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   39 ( 9A )   5211 - 5216   2000.9

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  • Composition control of Pb(ZrxTi1-x)O-3 thin films prepared by metalorganic chemical vapor deposition Reviewed

    K Nagashima, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   39 ( 1 )   212 - 216   2000.1

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  • Preparation of SrRuO3 and CaRuO3 films by MOCVD and its application to electrodes for ferroelectric thin films Reviewed

    N Okuda, N Higashi, K Ishikawa, N Nukaga, H Funakubo

    FERROELECTRIC THIN FILMS VIII   596   79 - 84   2000

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  • Ferroelectric property improvement of Pb(ZrxTi1-x)O3 films by source gas pulse-introduced MOCVD

    Hiroshi Funakubo, Kuniharu Nagashima

    IEEE International Symposium on Applications of Ferroelectrics   1   67 - 70   2000

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  • Orientation control of ZnO thin film prepared by CVD Reviewed

    H Funakubo, N Mizutani, M Yonetsu, A Saiki, K Shinozaki

    JOURNAL OF ELECTROCERAMICS   4   25 - 32   1999.12

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  • Effect of deposition temperature and composition on the microstructure and electrical property of SrBi2Ta2O9 thin films prepared by metalorganic chemical vapor deposition Reviewed

    N Nukaga, K Ishikawa, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   38 ( 9B )   5428 - 5431   1999.9

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  • Preparation of bi-layered ferroelectric thin film by thermal MOCVD Reviewed

    H Funakubo, N Nukaga, K Ishikawa, H Kokubun, H Machida, K Shinozaki, N Mizutani

    FERROELECTRICS   232 ( 1-4 )   1003 - 1008   1999

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  • Preparation of Pb(Zr,Ti)O-3 film by laser-assisted CVD Reviewed

    H Funakubo, K Kuroyanagi, K Shinozaki, N Mizutani

    JOURNAL OF THE KOREAN PHYSICAL SOCIETY   32   S1386 - S1389   1998.2

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  • Effect of calcium modification on the microstructure and oxidation property of submicron spherical palladium powders Reviewed

    SL Che, O Sakurai, H Funakubo, K Shinozaki, N Mizutani

    JOURNAL OF MATERIALS RESEARCH   12 ( 2 )   392 - 397   1997.2

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  • The Effect of Ti/Sr Ratio on Grain Growth of La-Doped SrTiO_3 Ceramics

    FURUKAWA Yukio, SAKURAI Osamu, FUNAKUBO Hiroshi, SHINOZAKI Kazuo, MIZUTANI Nobuyasu

    Journal of the Ceramic Society of Japan   104 ( 1207 )   190 - 195   1996.3

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    The effect of Ti/Sr ratio on the grain growth of La-doped SrTiO_3 ceramics sintered at 1400-1490℃ for 2h in 5%H_2-95%N_2 with precisely controlled Ti/Sr ratio of 0.96-1.04 was investigated. The grain size was maximum at Ti/Sr ratio of 1.000 and remarkably decreased with excess amounts of Sr and Ti above 1470℃. However, the grain size was 2μm and almost constant below 1440℃ regardless of the composition. The bulk density was almost constant(97%)in the Ti excess region, but decreased remarkably by addition of excess Sr. The microstructure was divided into three types depending on the Ti/Sr ratio and sintering temperature;(1)Sr rich region, (2)Ti/Sr&gnE;1 and above 1470℃, (3)Ti/Sr&gnE;1 and below 1440℃. In the early stage, the nuclei of remarkably grown grains were formed and their amount and the grain growth rate were dependent on the Ti/Sr ratios.

    DOI: 10.2109/jcersj.104.190

    CiNii Books

    CiNii Research

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  • RESIDUAL STRAIN IN EPITAXIALLY-GROWN PBTIO3 AND PZT FILMS PREPARED ON (100)MGO SUBSTRATES BY MOCVD Reviewed

    M OTSU, H FUNAKUBO, T HIOKE, T AKAI, K SHINOZAKI, N MIZUTANI

    NIPPON KAGAKU KAISHI   ( 10 )   789 - 795   1995.10

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  • Preparation of PZT film on (100)Pt/(100) MgO substrate by CVD and its properties

    Masato Otsu, Hiroshi Funakubo, Kazuo Shinozaki, Hiroshi Henmi, Nobuyasu Mizutani

    Journal of the Ceramic Society of Japan. International ed.   102 ( 2 )   127 - 131   1994.2

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  • MOCVD法による磁性および誘電性セラミックス薄膜の合成と性質に関する研究

    HIROSHI FUNAKUBO

    1994

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  • Microstructure of iron nitride-titanium nitride films prepared by CVD

    Hiroshi Funakubo, Nobuo Kieda, Kazuo Shinozaki, Nobuyasu Mizutani

    Journal of the Ceramic Society of Japan. International ed.   101 ( 7 )   714 - 717   1993.7

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  • MOCVD法による磁性および誘電性セラミックス薄膜の合成と性質に関する研究

    舟窪浩

    1993.2

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  • GRAIN-BOUNDARY STRUCTURE OF BI2O3-DIFFUSED BATIO3 BL CAPACITOR Reviewed

    H YAMAMOTO, H FUNAKUBO, K SHINOZAKI, N MIZUTANI

    NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   100 ( 10 )   1266 - 1270   1992.10

  • Growth of Epitaxial PLZT Film by CVD (Ceramic letter)

    FUNAKUBO Hiroshi, IMASHITA Katsuhiro, MIZUTANI Nobuyasu

    Journal of the Ceramic Society of Japan   99 ( 1155 )   1169 - 1171   1991.11

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    (Pb, La) (Zr, Ti)O3 films were prepared by CVD using Pb(DPM)2, La(DPM)3, Zr(O⋅t-Bu)4, Ti(O⋅i-Pr)4 and O2 as starting materials. PLZT films were grown with almost complete epitaxy on (100) MgO substrates. The deposition rate of the film was about 50-100nm/min. Some optical properties were almost the same as those of PLZT ceramics.

    DOI: 10.2109/jcersj.99.1169

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  • Growth of epitaxial PLZT film by CVD

    Hiroshi Funakubo, Katsuhiro Imashita, Nobuyasu Mizutani

    Journal of the Ceramic Society of Japan. International ed.   99 ( 11 )   1130 - 1132   1991.11

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  • Formation of Epitaxial Pb(Zr, Ti)O_3 Film by CVD

    FUNAKUBO Hiroshi, IMASHITA Katsuhiro, KIEDA Nobuo, MIZUTANI Nobuyasu

    Journal of the Ceramic Society of Japan   99 ( 1147 )   248 - 250   1991.3

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    Pb_x(Zr_y, Ti_<1-y>)O_3 films were prepared by CVD using Pb(DPM)_2, Zr(O・t-Bu)_4, Ti(O・i-Pr)4, and O_2 as starting materials. Metal alkoxide was selected for both Ti and Zr starting Materials, which were effective for controlling Ti and Zr contents in the films. PZT films with the composition, x = ca. 1.0 and y = ca. 0.5, were grown reproducibly with almost complete epitaxy on (100) MgO substrates. Deposition rate of film was about 200-300 nm/min.

    DOI: 10.2109/jcersj.99.248

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  • Formation of epitaxial Pb(Zr, Ti)O3 film by CVD

    Hiroshi Funakubo, Katsuhiro Imashita, Nobuo Kieda, Nobuyasu Mizutani

    Journal of the Ceramic Society of Japan. International ed.   99 ( 3 )   63 - 65   1991.3

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  • DEPOSITION CHARACTERISTICS AND PROPERTIES OF IRON NITRIDE FILMS BY CVD USING ORGANOMETALLIC COMPOUND Reviewed

    H FUNAKUBO, N KIEDA, M KATO, N MIZUTANI, T TATSUNO

    JOURNAL OF MATERIALS SCIENCE   25 ( 12 )   5303 - 5312   1990.12

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  • PREPARATION OF TIO2-ZRO2 FILMS BY MOCVD Reviewed

    K IMASHITA, H FUNAKUBO, N KIEDA, M KATO, N MIZUTANI

    NIPPON KAGAKU KAISHI   ( 12 )   1395 - 1401   1990.12

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  • PREPARATION AND DEPOSITION MECHANISM OF TANTALUM NITRIDE FILMS BY CVD Reviewed

    H FUNAKUBO, M KOBAYASHI, N KIEDA, M KATO, N MIZUTANI

    KAGAKU KOGAKU RONBUNSHU   16 ( 3 )   430 - 437   1990.5

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  • PREPARATION OF TANX-TIN FILMS BY CVD Reviewed

    H FUNAKUBO, M KOBAYASHI, N KIEDA, M KATO, N MIZUTANI

    NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   98 ( 2 )   168 - 173   1990

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  • HOSPITAL AND NURSING HOMES, ROBOTS

    FUNAKUBO H.

    INTERNATIONAL ENCYCLOPEDIA OF ROBOTICS〜APPLICATION AND AUTOMATION〜   1   638 - 642   1988

  • Preparation of Niobium Nitride Films by CVD(2. Vapor Phase Reactions)(<Special Issue>Syntheses of Ceramics by New Techniques (I))

    FUNAKUBO Hiroshi, KIEDA Nobuo, MIZUTANI Nobuyasu, KATO Masanori

    Journal of the Ceramic Association, Japan   95 ( 1097 )   55 - 58   1987.1

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    Niobium nitride films were deposited on fused silica substrates by the CVD process using reactant gas mixtures of NbCl5, N2, H2 and Ar at a deposition temperature from 700° to 1100°C. The effects of deposition parameters on the film properties were investigated, and the deposition mechanism was discussed. Two regions with different rate-determining steps were found under the experimental conditions studied. At 1000°C and at a total gas flow rate from 1000 to 4000ml/min, the deposition rate was controlled by the mass transport in the gas phase, and the nitrogen content in the deposits increased with increasing deposition temperature and increasing mole ratio of N2 to NbCl5.

    DOI: 10.2109/jcersj1950.95.65

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  • Japanese Research and Development of Potable Microcomputer System for Cooperative Control of movement of Electrical Prosthesis

    FUNAKUBO H.

    International Conference on Telemanipulators for the Physically Handicapped   193 - 202   1979

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Books

  • 強誘電体薄膜におけるサイトエンジニアリングコンセプト

    表面科学  2005 

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  • ペロブスカイト酸化物基強誘電体薄膜における巨大分極誘起への挑戦

    ㈱エヌ・ティー・エス, 未来材料  2005 

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  • Site Engineering Concept of Ferroelectric Thin Films

    Journal of Surface Science Society of Japan, HYOMEN KAGAKU  2005 

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  • Spontaneous Polarization and Crystal Orientation Control of MOCVD PZT and Bi4Ti3O12-Based Films

    Springer, Ferroelectric Thin Films  2005 

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  • 化学気相成長法によるβ-FeSi2薄膜の結晶成長とPL発光特性

    シーエムシー出版, 月刊 機能材料  2005 

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  • Spontaneous Polarization and Crystal Orientation Control of MOCVD PZT and Bi4Ti3O12-Based Films

    Springer, Ferroelectric Thin Films  2005 

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  • Crystal Growth of b-FeSi2 Thin Film by CVD and Photoluminescence Properties

    2005 

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  • 薄膜コンデンサ材料の開発

    化学工業  2005 

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  • Ferroelectric Thin Films XⅡ

    MRS, Vol. 784 from the MRS Symposium Proceedings Series  2004 

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  • 完全分極軸配向PZT薄膜による自発分極値の見積もり

    工業製品技術協会, セラミックデータブック2004, 工業と製品  2004 

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  • Ferroelectric Thin Films XⅡ

    MRS, Vol. 784 from the MRS Symposium Proceedings Series  2004 

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  • Recent Development in the Preparation of Ferroelectric Thin Films by MOCVD

    Springer, Ferroelectric Random Access Memories  2003 

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  • In-situ Observation of the Domain Dynamics of Piezoelectric Films Under Applied Electric Field

    JASRI, SPring-8 User Experiment Report No.12 (2003B)  2003 

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  • Recent Development in the Preparation of Ferroelectric Thin Films by MOCVD

    Springer, Ferroelectric Random Access Memories  2003 

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  • Advanced X-ray Analysis of Ferroelectrics

    POLAR OXIDES PROPERTIES, CHARACTERIZATION AND IMAGING  2003 

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  • PZTの物性はどこまでわかっているのか―エピタキシャルPZT薄膜の研究からわかること―

    電気学会電子材料研究会資料  2003 

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  • MOCVD法による強誘電体薄膜の形成

    機能材料  2003 

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  • Advanced X-ray Analysis of Ferroelectrics

    POLAR OXIDES PROPERTIES, CHARACTERIZATION AND IMAGING  2003 

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  • Electrical Property of PZT Films-Research from Epitaxial PZT films-

    2003 

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  • A Novel Ruthenium Precursor for MOCVD without Seed Ruthenium Layer

    2003 

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  • A Novel Ruthenium Precursor for MOCVD without Seed Ruthenium Layer

    2003 

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  • In-situ Observation of the Domain Dynamics of Piezoelectric Films Under Applied Electric Field

    JASRI, SPring-8 User Experiment Report No.12 (2003B)  2003 

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  • X線回折逆格子空間マッピング法を用いた強誘電体薄膜中のドメイン構造の観察

    機能材料  2002 

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  • エピタキシャル薄膜を用いたPZT薄膜の結晶構造と特性評価

    電気学会電子材料研究会資料  2002 

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  • サイトエンジニアリングコンセプトに基づくBi_4_Ti_3_O_12_基強誘電体の設計

    工業材料50  2002 

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  • 強誘電体薄膜材料における非鉛化実現の可能性

    表面  2002 

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  • エキシマレーザMOCVD法によるPbTiO_3_薄膜の低温合成

    材料科学誌  1999 

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  • Sr-Bi-Ta-Oエピタキシャル薄膜のMOCVD合成とその結晶構造

    第37回セラミックス基礎科学討論会講演要旨集  1999 

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  • セラミックス薄膜の配向制御と特性発現

    セラミックスデータブック  1997 

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  • MOCVD法による酸化物薄膜の合成

    セラミックデータブック94  1994 

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▼display all

MISC

  • Influence of Sc dopant on the Electro-optic Property of AlN Thin Films

    山田智明, 山田智明, 安部琴子, YUAN Xueyou, 岡本一輝, 舟窪浩, 吉野正人, 長崎正雅

    日本セラミックス協会秋季シンポジウム講演予稿集(Web)   37th   2024

  • Growth of Y-doped HfO2 ferroelectric thin films on Si substrates by RF magnetron sputtering

    小野友慈, 近藤真矢, 寺西貴志, 寺西貴志, 岡本一輝, 舟窪浩, 山田智明, 山田智明, 岸本昭

    日本セラミックス協会秋季シンポジウム講演予稿集(Web)   37th   2024

  • Impact of substrate on dielectric tunable properties in epitaxial Ba(Zr0.2Ti0.8)O3 films with different thickness

    高橋良, 江原祥隆, 澤井眞也, 濱嵜容丞, 西田謙, 安井伸太郎, 舟窪浩, NOVAK Nicola

    日本セラミックス協会秋季シンポジウム講演予稿集(Web)   37th   2024

  • Lattice spacing and ferroelectric properties of CeO2-HfO2-ZrO2 thin films

    下野園航平, 前川芳輝, 茶谷那知, 岡本一輝, 山岡和希子, 川島康, 井上ゆか梨, 舟窪浩

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   85th   2024

  • Frequency dependence of piezoelectric response for (100)/(001)-oriented tetragonal Pb(Zr,Ti)O3 films

    中畑美紀, 岡本一輝, 石濱圭佑, 清水荘雄, 小金澤智之, KUMARA Rosantha, 仲谷友孝, 池田理, 坂田修身, 山田智明, 山田智明, 舟窪浩

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   85th   2024

  • Crystal Structure and Ferroelectric Properties of Self-polarized (001)-oriented Epitaxial (Bi,K)TiO3-PbTiO3 films grown by Hydrothermal Method

    HU Yuxian, 村下太一, 岡本一輝, 舟窪浩

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   85th   2024

  • Evaluation of thickness dependence on ferroelectricity in (Al,Sc)N-based FeRAM

    道古宗俊, 松井尚子, 入澤寿和, 恒川孝二, SUN Nana, 中村美子, 岡本一輝, 舟窪浩

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   85th   2024

  • Analysis of Nanoscale Ferroelectric Polarization Inversion Dynamics Based on Image Processing of Local C-V Maps

    平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   71st   2024

  • Increase of Sc solubility in AlN films by Ga substitution and their impact on ferroelectric and piezoelectric properties

    大田怜佳, 安岡慎之介, 中村美子, 岡本一輝, 原浩之, 正能大起, 上岡義弘, 召田雅実, 舟窪浩

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   71st   2024

  • Development of Integrated Measurement System for Local C-V Mapping and Piezoresponse Force Microscopy

    野口雄貴, 三村和仙, 清水荘雄, 舟窪浩, 平永良臣

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   71st   2024

  • Crystal structure and ferroelectric properties of CeO2-HfO2-ZrO2 thin films

    下野園航平, 前川芳輝, 茶谷那知, 岡本一輝, 山岡和希子, 川島康, 井上ゆか梨, 舟窪浩

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   71st   2024

  • Curie Temperature and Strain Relaxation in Hydrothermally-deposited Epitaxial Ferroelectric PbTiO3 Thin Films

    HU Yuxian, 岡本一輝, 舟窪浩

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   71st   2024

  • Piezoelectricity and Ferroelectricity of High Sc Concentration ScGaN Film prepared by sputtering method

    上原雅人, 平田研二, 中村美子, 安岡慎之介, ANGGRAINI Sri Ayu, 岡本一輝, 山田浩志, 舟窪浩, 秋山守人

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   71st   2024

  • Influence of thickness for Pt bottom electrode on film properties of AlScN

    道古宗俊, 松井尚子, 入澤寿和, 恒川孝二, 中村美子, 岡本一輝, 舟窪浩

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   71st   2024

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  • Heat treatment effect of (Bi, K)TiO3 based thin film prepared by hydrothermal method

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    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   84th   2023

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    Proceedings of Symposium on Ultrasonic Electronics   43   439   2022.11

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  • 3Pa3-3 Evaluation of Ta2O5 Piezoelectric Thin Film Prepared on Pt/Si Substrate at Low Deposition Rate

    Matsuura Keisuke, Suzuki Masashi, Kakio Shoji, Kodera Masanori, Funakubo Hiroshi

    Proceedings of Symposium on Ultrasonic Electronics   43   369   2022.11

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  • 第31回日本MRS年次大会開催報告、B-4「Recent development of novel ferroelectric materials, from fundamentals to applications」

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    日本MRSニュース   Vol. 34 ( No. 1 )   2022.3

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  • The ferroelectric properties of (Al,Sc)N thin film controlled by in-plane orientation and thermal strain

    Yasuoka Shinnosuke, Mizutani Ryoichi, Ota Reika, Shiraishi Takahisa, Shimizu Takao, Uehara Masato, Yamada Hiroshi, Akiyama Morito, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2022.1   1143 - 1143   2022.2

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    DOI: 10.11470/jsapmeeting.2022.1.0_1143

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  • Photoluminescence properties of doped β-FeSi2 films

    Akiyama Kensuke, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2022.1   2515 - 2515   2022.2

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  • Deposition and Evaluation of Ta2O5 Piezoelectric Thin Film on SRO/Pt/Si substrate

    Matsuura Keisuke, Suzuki Masashi, Kakio Shoji, Kodera Masanori, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2022.1   371 - 371   2022.2

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  • Structural Characterization of Orientation-controlled Epitaxial PbTiO3 Films deposited by Hydrothermal Method

    HU YUXIAN, Kubota Rurika, Shiraishi Takahisa, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2022.1   1130 - 1130   2022.2

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  • Growth of (111)-oriented epitaxial (Hf,Ce)O2 ferroelectric films by PLD method and their characterization

    Hirai Koji, Shiraishi Takahisa, Yamaoka Wakiko, Tsurumaru Risako, Inoue Yukari, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2022.1   1126 - 1126   2022.2

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  • Ferroelectricity of (Al1-xScx)N thin films with various electrodes

    Ota Reika, Yasuoka Shinnosuke, Mizutani Ryoichi, Shiraishi Takahisa, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2022.1   1142 - 1142   2022.2

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  • Enhancement of crystal anisotropy and ferroelectric property by decreasing thickness in (Al,Sc)N films

    安岡慎之介, 水谷涼一, 大田怜佳, 白石貴久, 清水荘雄, 清水荘雄, 清水荘雄, 安井伸太郎, 江原祥隆, 西田謙, 上原雅人, 山田浩志, 秋山守人, 今井康彦, 坂田修身, 舟窪浩

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   69th   1144 - 1144   2022

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  • Crystal structure and temperature dependence of epitaxial BZT films on MgO substrates

    高橋良, 江原祥隆, 澤井眞也, 濱嵜容丞, 西田謙, 安井伸太郎, 白石貴久, 舟窪浩

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  • Thermal Hysteresis During Ferroelectric Transition in HfO2-based Materials

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    日本物理学会講演概要集(CD-ROM)   77 ( 1 )   2022

  • Crystal structure and dielectric properties of Ba(ZrxTi1-x)O3 on (100)MgO substrate

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    電子材料研究討論会プログラム講演予稿集(CD-ROM)   42nd   2022

  • ハフニア基強誘電体薄膜の電気光学効果

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    セラミックスデータブック 2021/22   工業と製品 Vol. 49 ( No. 103 )   68 - 72   2021.12

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  • 1Pa3-2 SAW Propagation Properties of (K,Na)NbO3 Films Deposited by Hydrothermal Synthesis or RF Sputtering

    Yoshizawa Kazuma, Suzuki Masashi, Kakio Shoji, Ito Yoshiharu, Tateyama Akinori, Funakubo Hiroshi, Wakabayashi Tsuyoshi, Shibata Kenji

    Proceedings of Symposium on Ultrasonic Electronics   42   n/a   2021.10

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  • Evaluation of SAW Propagation Properties on Hydrothermally-Synthesized (K,Na)NbO3 Films

    Yoshizawa Kazuma, Suzuki Masashi, Kakio Shoji, Ito Yoshiharu, Tateyama Akinori, Funakubo Hiroshi, Wakabayashi Tsuyoshi

    JSAP Annual Meetings Extended Abstracts   2021.2   408 - 408   2021.8

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  • Dependency of crystal orientation on the piezoelectric property for hydrothermally synthesized (K,Na)NO3 films

    Tateyama Akinori, Ito Yoshiharu, Shiraishi Takahisa, Orino Yuichiro, Kurosawa Minoru, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2021.2   1228 - 1228   2021.8

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  • Electric properties of (Bi,K)TiO3 polar-axis-oriented films deposited by hydrothermal method

    Ito Yoshiharu, Tateyama Akinori, Kubota Rurika, Shiraishi Takahisa, Kurosawa Minoru, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2021.2   1232 - 1232   2021.8

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  • Effect of film thickness on the vibration characteristics and energy harvesting property for hydrothermally synthesized (K,Na)NbO3 films

    Tateyama Akinori, Ito Yoshiharu, Shiraishi Takahisa, Orino Yuichiro, Kurosawa Minoru, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2021.2   1230 - 1230   2021.8

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  • Characterization of piezoelectric properties in polar axis-oriented tetragonal epitaxial PZT films

    Okoshi Haruka, Tateyama Akinori, Shiraishi Takahisa, Ehara Yoshitaka, Nishida Ken, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2021.2   1236 - 1236   2021.8

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  • Electro-optic effect in epitaxial Y-doped HfO2 ferroelectric thin film

    Kondo Shinya, Shimura Reijiro, Teranishi Takashi, Kishimoto Akira, Nagasaki Takanori, Fnakubo Hiroshi, Yamada Tomoaki

    JSAP Annual Meetings Extended Abstracts   2021.2   1240 - 1240   2021.8

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  • Structural characterization and ferroelectricity of tetragonal (Bi.K)TiO3 deposited on (001), (110) and (111)SrTiO3 substrates by hydrothermal method

    Kubota Rurika, Tateyama Akinori, Ito Yoshiharu, Shiraishi Takahisa, Kurosawa Minoru, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2021.2   1233 - 1233   2021.8

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  • Composition dependencies of crystal structure and electrical properties of epitaxial tetragonal (1-x)(Bi,Na)TiO3- xBaTiO3 films.

    Ishihama Keisuke, Shimizu Takao, Sato Yusuke, Yamaoka Wakiko, Tsurumatu Risako, Yoshimura Shintaro, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2021.2   1234 - 1234   2021.8

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  • Post perovskite structure in piezoelectric and ferroelectric films

    Funakubo Hiroshi, Shiraishi Takahisa, Shimizu Takao

    JSAP Annual Meetings Extended Abstracts   2021.2   135 - 135   2021.8

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  • Deposition and Analysis of SAW Propagation Properties of Ta2O5 Piezoelectric Thin Film on Pt Crystal Film

    Matsuura Keisuke, Suzuki Masashi, Kakio Shoji, Kodera Masanori, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2021.2   409 - 409   2021.8

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  • Investigation of crystal structure and electrical property of {001}c-oriented (K,Na,Li)(Nb,Ta)O3 thick films deposited on metal substrates

    Shiraishi Takahisa, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2021.2   1227 - 1227   2021.8

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  • Mechanism for Emergence of Ferroelectricity in HfO2-based Materials

    清水荘雄, 三村和仙, 舟窪浩

    セラミックス   Vol. 56 ( No. 7 )   455 - 458   2021.7

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    江原祥隆, 清水荘雄, 舟窪浩

    セラミックス   Vol. 56 ( No. 7 )   2021.7

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  • ウルツ鉱構造窒化物の強誘電性

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    セラミックス   Vol. 56 ( No. 7 )   443 - 446   2021.7

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    FINE CERAMICS REPORT 2021 夏号   Vol. 39 ( No. 3 )   92 - 95   2021.7

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    江原 祥隆, 清水 荘雄, 舟窪 浩

    Ceramics Japan = セラミックス : bulletin of the Ceramic Society of Japan   56 ( 7 )   459 - 462   2021.7

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    無機材会会誌   8 - 9   2021.5

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    2021年度セラミックス大学 ベーシックコーステキスト   1 - 10   2021.5

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  • 振動発電用環境適応型圧電体の低温作製と評価

    伊東良晴, 舘山明紀, 舟窪浩

    クリーンエネルギー(3月号)   vol. 30 ( no. 3 )   37 - 41   2021.3

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  • BAW and SAW Characteristics of (K,Na)NbO3 Films Deposited by RF Sputtering

    Yoshizawa Kazuma, Suzuki Masashi, Kakio Shoji, Ito Yoshiharu, Tateyama Akinori, Funakubo Hiroshi, Wakabayashi Tsuyoshi, Shibata Kenji

    JSAP Annual Meetings Extended Abstracts   2021.1   390 - 390   2021.2

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  • Temperature dependence of the ferroelectricity in (ScxAl1-x)N thin films

    Mizutani Ryoichi, Yasuoka Shinnosuke, Shimizu Takao, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2021.1   1188 - 1188   2021.2

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  • Investigation of electrical and piezoelectric properties of 0.1CeO2-0.9HfO2 films

    Shiraishi Takahisa, Kiguchi Takanori, Konno Toyohiko J., Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2021.1   1190 - 1190   2021.2

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  • Piezoelectric properties of (Bi,K)TiO3 films deposited at less than 100°C

    Ito Yoshiharu, Tateyama Akinori, Kubota Rurika, Shiraishi Takahisa, Kurosawa Minoru, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2021.1   1183 - 1183   2021.2

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  • Synthesis of Iron Disilicide/TiO2 Composite Powder for Water Splitting

    Akiyama Kensuke, Motoizumi Yuu, Naganuma Yasuhiro, Funakubo Hiroshi, Irie Hiroshi

    JSAP Annual Meetings Extended Abstracts   2021.1   345 - 345   2021.2

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  • Characterization of tetragonal (1-x)(Bi,Na)TiO3- xBaTiO3 films deposited on various substrates.

    Ishihama Keisuke, Tateyama Akinori, Shimizu Takao, Sato Yusuke, Yamaoka Wakiko, Tsurumaru Risako, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2021.1   1181 - 1181   2021.2

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  • Effect of raw material concentration on preparation of (Bi,K)TiO3 thin films by hydrothermal method

    Kubota Rurika, Tteyama Akinori, Ito Yoshiharu, Shiraishi Takahisa, Kurosawa Minoru, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2021.1   1182 - 1182   2021.2

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  • Growth and ferroelectric properties of epitaxial (Al1-xScx)N films.

    Yasuoka Shinnosuke, Shimizu Takao, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2021.1   1187 - 1187   2021.2

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  • Noise Reduction by Principal Component Analysis for Local C-V Mapping

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    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   82nd   1247 - 1247   2021

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  • Domain structures of PbTiO3 epitaxial thin films prepared on Sr(Zr, Ti)O3-buffered substrates with various lattice constants

    森川友秀, 小寺正徳, 清水荘雄, 江原祥隆, 舟窪浩

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   68th   1196 - 1196   2021

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  • Characterization of polar axis-oriented tetragonal epitaxial PZT films with various Zr/(Zr+Ti) ratio

    大越春香, 森川友秀, 舘山明紀, 小寺正徳, 白石貴久, 江原祥隆, 舟窪浩

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   68th   1197 - 1197   2021

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    DOI: 10.11470/jsapmeeting.2021.1.0_1197

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  • Nanoscale Mapping of Domain Switching Behavior in Ferroelectric Films

    平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   68th   1167 - 1167   2021

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    DOI: 10.11470/jsapmeeting.2021.1.0_1167

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  • Emergence of ferroelectricity in Y-substituted HfO2

    清水荘雄, 清水荘雄, 田代裕貴, 三村和仙, 舟窪浩

    日本セラミックス協会秋季シンポジウム講演予稿集(Web)   34th   2021

  • Raman spectroscopy of ferroelectric HfO2-based films

    高橋雄真, 白石貴久, 小寺正徳, 志村礼司郎, 三村和仙, 森分博紀, 田口綾子, 舟窪浩

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   82nd   1245 - 1245   2021

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  • Preparation of Y doped HZO ferroelectric thick films at room temperature by the sputtering method and their electrical and piezoelectric properties

    志村礼司郎, 三村和仙, 舘山明紀, 清水荘雄, 清水荘雄, 白石貴久, 舟窪浩

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   68th   1191 - 1191   2021

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  • Crystal structure and electric properties of (100) BZT thin films on MgO substrates

    高橋良, 江原祥隆, 西田謙, 安井伸太郎, 白石貴久, 舟窪浩

    日本セラミックス協会秋季シンポジウム講演予稿集(Web)   34th   2021

  • 2Pa3-3 Evaluation of Electromechanical Coupling Coefficients of Hydrothermally Synthesized (K,Na)NbO3 Films

    Yoshizawa Kazuma, Suzuki Masashi, Kakio Shoji, Ito Yoshiharu, Tateyama Akinori, Funakubo Hiroshi, Wakabayashi Tsuyoshi

    Proceedings of Symposium on Ultrasonic Electronics   41   n/a - 295   2020.11

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    DOI: 10.24492/use.41.0_2pa3-3

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  • HfO2およびZrO2基強誘電体膜の厚膜化と室温合成

    三村和仙, 志村礼司郎, 舟窪浩, 清水荘雄

    超音波TECHNO   2020年9-10号 ( 5 )   41 - 45   2020.9

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  • 新規非鉛圧電体の時間分解X線回折による電場応答の観察

    清水荘雄, 舟窪浩

    文部科学省ナノテクノロジープラットフォーム事業 微細構造解析プラットフォーム 利用報告書 実施機関 国立研究開発法人物質・材料研究機構   令和元年度   A-19-NM-0004   2020.9

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  • PZT膜の電圧印可による結晶構造変化

    井上英久, 清水荘雄, 舟窪浩

    文部科学省ナノテクノロジープラットフォーム事業 微細構造解析プラットフォーム 利用報告書 実施機関 国立大学法人 東北大学   令和元年度   A-19-TU-0003   2020.9

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  • 2相共存PZTにおける電場有機相転移の観察

    清水荘雄, 舟窪浩

    文部科学省ナノテクノロジープラットフォーム事業 微細構造解析プラットフォーム 利用報告書 実施機関 国立研究開発法人物質・材料研究機構   令和元年度   A-19-NM-0086   2020.9

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  • 窒化物圧電体膜の微構造評価

    安岡慎之介, 清水荘雄, 舟窪浩

    文部科学省ナノテクノロジープラットフォーム事業 微細構造解析プラットフォーム 利用報告書 実施機関 国立大学法人 東北大学   令和元年度   A-19-TU-0048   2020.9

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  • 強誘電体膜のドメイン構造解析とその形成機構

    舟窪浩

    文部科学省ナノテクノロジープラットフォーム事業 微細構造解析プラットフォーム 利用報告書 実施機関 国立大学法人 東北大学   令和元年度   A-19-TU-0034   2020.9

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  • Ferroelectric properties of room temperature-deposited (Al1-xScx)N films by the sputtering method.

    Yasuoka Shinnosuke, Shimizu Takao, Uehara Masato, Yamada Hiroshi, Akiyama Morito, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2020.2   886 - 886   2020.8

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    DOI: 10.11470/jsapmeeting.2020.2.0_886

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  • Preparation of (Bi,K)TiO3 films by chemical vapor deposition and hydrothermal method

    Kubota Rurika, Yoshiharu Ito, Minoru Kurosawa, Hiroshi Funakubo

    JSAP Annual Meetings Extended Abstracts   2020.2   887 - 887   2020.8

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    DOI: 10.11470/jsapmeeting.2020.2.0_887

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  • Proposal for simultaneous characterization of direct and inverse piezoelectricity using longitudinal vibration

    Tateyama Akinori, Ito Yoshiharu, Shimizu Takao, Orino Yuichiro, Kurosawa Minoru, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2020.2   877 - 877   2020.8

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  • Low-temperature deposition of (Bi,K)TiO3 films by hydrothermal method

    Ito Yoshiharu, Tateyama Akinori, Huang Yu, Kubota Rurika, Kurosawa Minoru, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2020.2   888 - 888   2020.8

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  • Controlling conduction type by Si content in Ca-Mg-Si ternary thermoelectric material

    Katagiri Atsuo, Uehara Mutsuo, Kurokawa Mao, Akiyama Kensuke, Matsushima Masaaki, Uchida Hiroshi, Kimura Yoshisato, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2020.2   1251 - 1251   2020.8

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    DOI: 10.11470/jsapmeeting.2020.2.0_1251

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  • Synthesis of Iron Disilicide/TiO2 Composite Powder for Water Splitting

    Akiyama Kensuke, Takahashi Ryo, Motoizumi Yu, Funakubo Hiroshi, Irie Hiroshi

    JSAP Annual Meetings Extended Abstracts   2020.1   389 - 389   2020.2

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    DOI: 10.11470/jsapmeeting.2020.1.0_389

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  • Crystal growth of Bi2SiO5 epitaxial thin film

    Kodera Masanori, Shimizu Takao, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2020.1   1230 - 1230   2020.2

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  • Effect of deposition condition on the ferroelectric properties of (Al1-xScx)N thin films.

    Yasuoka Shinnosuke, Shimizu Takao, Uehara Masato, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2020.1   1228 - 1228   2020.2

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  • Thick-film deposition of (K,Na)NbO3 by microwave-assisted hydrothermal process

    Okura Masaki, Ito Yoshiharu, Shiraishi Takahisa, Kiguchi Takanori, Konno Toyohiko, Funakubo Hiroshi, Uchida Hiroshi

    JSAP Annual Meetings Extended Abstracts   2020.1   1249 - 1249   2020.2

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  • Simultaneous characterization of direct and inverse piezoelectricity using longitudinal vibration for self-poled (KxNa1-x)NbO3 films prepared by hydrothermal method

    Tateyama Akinori, Ito Yoshiharu, Shimizu Takao, Orino Yuichiro, Kurosawa Minoru, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2020.1   1251 - 1251   2020.2

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  • Ferroelectricity of GaN and Sc-doped GaN Thin Films Prepared by Sputtering Method

    Uehara Masato, Yasuoka Shinnosuke, Shimizu Takao, Yamada Hirosshi, Akiyama Morito, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2020.1   1229 - 1229   2020.2

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  • Evaluation of tetragonal (1-x)(Bi,Na)TiO3-xBaTiO3 films prepared by PLD method.

    Ishihama Keisuke, Tateyama Akinori, Shimizu Takao, Sato Yusuke, Yamaoka Wakiko, Ishida Mirai, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2020.1   1252 - 1252   2020.2

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  • ReO3-type oxyfluoride thin films aiming for dielectric materials

    小寺正徳, 舟窪浩, 清水荘雄, 田口綾子, 森分博紀

    日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM)   33rd   2020

  • Thickness-dependent a1/a2 domain structure evolution of PbTiO3 thin films with in-plane polarization

    江原祥隆, 中島崇明, 一ノ瀬大地, 清水荘雄, 西田謙, 山田智明, 舟窪浩

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   67th   1244 - 1244   2020

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  • Dielectric properties of ReO3-type oxyfluoride thin films

    小寺正徳, 舟窪浩, 清水荘雄, 田口綾子, 森分博紀

    日本セラミックス協会年会講演予稿集(CD-ROM)   2020   2020

  • Study on preparation method for strain-free PZT thin films

    森川友秀, 小寺正徳, 江原祥隆, 清水荘雄, 舟窪浩

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   81st   875 - 875   2020

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  • Preparation of HfO2-based ferroelectric thick film by the sputtering method at room temperature and its electrical properties

    志村礼司郎, 三村和仙, 舘山明紀, 清水荘雄, 舟窪浩

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   67th   1239 - 1239   2020

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  • Investigation of the stabilization of the orthorhombic phase using epitaxial HfO2 based films

    三村和仙, 清水荘雄, 舟窪浩

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   67th   1237 - 1237   2020

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  • Preparation of HfO2-based ferroelectric thick films at room temperature by the sputtering method and their electrical and piezoelectric properties

    志村礼司郎, 三村和仙, 舘山明紀, 清水荘雄, 舟窪浩

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   81st   900 - 900   2020

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  • HfO2基薄膜のZr,Yドープによる結晶相変化と強誘電相の安定性

    田代裕貴, 三村和仙, 清水荘雄, 勝矢良雄, 坂田修身, 木口賢紀, 白石貴久, 今野豊彦, 舟窪浩

    セラミックス基礎科学討論会講演要旨集   58th   2020

  • 圧電体のドメイン構造変化の時間応答

    清水荘雄, 舟窪浩

    高輝度放射光ステーション年次報告書2018   2018B4900   2019.10

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  • Time resolved x-ray diffraction studies of ultrafast 90°domain switching in (100)(001) oriented tetragonal PZT thin films

    HIROSHI FUNAKUBO, Osami Sakata, Kim Jaemyung

    高輝度放射光ステーション年次報告書2018   2018A4905   2019.10

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  • Preparations of AeSi2 films by a co-sputtering process

    Aoyama Kodai, Shimizu Takao, Kuramochi Hideto, Mesuda Masami, Akiike Ryo, Ide Keisuke, Katase Takayoshi, Kamiya Toshio, Kimura Yoshisato, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2019.2   2999 - 2999   2019.9

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  • Evaluation of structural change by electric field and piezoelectricity of PZT film with near MPB composition

    Inoue Hidehisa, Shimizu Takao, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2019.2   1399 - 1399   2019.9

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  • Study on crystal structures and electrical properties of (K,Na)(Nb,Ta)O3 thick films

    Shiraishi Takahisa, Tateyama Akinori, Ito Yoshiharu, Kiguchi Takanori, Uchia Hiroshi, Funakubo Hiroshi, Konno Toyohiko.J

    JSAP Annual Meetings Extended Abstracts   2019.2   1382 - 1382   2019.9

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  • Effect of compositionand thickness on domain structure in (PbxSr1-x)TiO3 films

    Ota Yuto, Yamada Tomoaki, Yoshino Masahito, shimizu Takao, Funakubo Hiroshi, Nagasaki Takanori

    JSAP Annual Meetings Extended Abstracts   2019.2   1397 - 1397   2019.9

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  • 蛍石構造強誘電体薄膜の組成による結晶構造変化の観察

    三村和仙, 清水荘雄, 舟窪浩

    文部科学省ナノテクノロジープラットフォーム事業 微細構造解析プラットフォーム 利用報告書 実施機関 国立大学法人 東北大学   平成30年度   A-18-TU-0042   2019.9

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  • 圧電体膜における電界印加による結晶構造変化観察

    井上英久, 清水荘雄, 舟窪浩

    文部科学省ナノテクノロジープラットフォーム事業 微細構造解析プラットフォーム 利用報告書 実施機関 国立大学法人 東北大学   平成30年度   A-18-TU-0043   2019.9

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  • (K,Na)NbO3 基圧電体の水熱製膜 Invited

    白石貴久, 木口賢紀, 今野豊彦, 舟窪浩

    セラミックス   第54巻 ( 8月号 )   540 - 543   2019.8

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  • これからセラミックスを始める人のための概論

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    2019年度セラミックス大学 ベーシックコーステキスト   1 - 15   2019.5

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  • Low-leakage design of a new piezoelectronic transistor and its SRAM application

    Shiotsu Yusaku, Yamamoto Shuu'ichiro, Funakubo Hiroshi, Kurosawa Minoru Kuribayashi, Sugahara Satoshi

    JSAP Annual Meetings Extended Abstracts   2019.1   2807 - 2807   2019.2

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  • Synthesis of Iron Disilicide/SiC Composite Powder for Water Splitting

    Akiyama Kensuke, Nojima Sakiko, Takahashi Ryo, Funakubo Hiroshi, Irie Hiroshi

    JSAP Annual Meetings Extended Abstracts   2019.1   350 - 350   2019.2

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    DOI: 10.11470/jsapmeeting.2019.1.0_350

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  • Thermoelectric property for BaxSr1-xSi2 films by co-sputtering process

    Aoyama Kodai, Shimizu Takao, Kuramochi Hideto, Mesuda Masami, Akiike Ryo, Ide Keisuke, Katase Takayoshi, Kamiya Toshio, Kimura Yoshisato, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2019.1   1843 - 1843   2019.2

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  • Fabrication of ferroelectric (Hf,Ce)O2 thin films and their crystal structure analysis

    Shiraishi Takahisa, Choi Sujin, Shimizu Takao, Kiguchi Takanori, Funakubo Hiroshi, Konno Toyohiko J.

    JSAP Annual Meetings Extended Abstracts   2019.1   1225 - 1225   2019.2

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  • X-ray diffraction study under electric field on PZT films near morphotropic phase boundary

    Inoue Hidehisa, Ichinose Daichi, Shimizu Takao, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2019.1   1235 - 1235   2019.2

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  • 強誘電体の最近の話題から、―メモリ、MEMS から IoT への展開

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  • Ferroelectricity in doped hafnium oxide: Materials, properties and devices

    Uwe Schroeder, Cheol Seong Hwang, Hiroshi Funakubo

    Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices   1 - 570   2019.1

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    DOI: 10.1016/C2017-0-01145-X

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  • 強誘電性ハフニア薄膜におけるドメイン構造のイメージング

    木口賢紀, 白石貴久, 清水荘雄, 三村和仙, 舟窪浩, 今野豊彦

    日本金属学会講演概要(CD-ROM)   164th   2019

  • HfO2基薄膜の相安定性と機能発現

    清水荘雄, 三村和仙, 舟窪浩

    セラミックス基礎科学討論会講演要旨集   57th   2019

  • 直方晶相ハフニア薄膜におけるドメイン構造

    木口賢紀, 白石貴久, 三村和仙, 清水荘雄, 舟窪浩, 今野豊彦

    日本セラミックス協会年会講演予稿集(CD-ROM)   2019   2019

  • PLD法を用いたY,ZrドープHfO2薄膜の作製と評価

    田代裕貴, 三村和仙, 清水荘雄, 舟窪浩

    セラミックス基礎科学討論会講演要旨集   57th   2019

  • Characterization of piezoelectricity for self poled (KxNa1-x)NbO3 films prepared by hydrothermal method

    Tateyama Akinori, Ito Yoshiharu, Shimizu Takao, Orino Yuichiro, Kurosawa Minoru, Yoshimura Takeshi, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   80th   1381 - 1381   2019

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    DOI: 10.11470/jsapmeeting.2019.2.0_1381

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  • Characterization of piezoelectric coefficient e31,f for orientation-controlled (K,Na)NbO3 films prepared by hydrothermal method.

    Tateyama Akinori, Ito Yoshiharu, Nakamura Yoshiko, Shimizu Takao, Orino Yuichiro, Kurosawa Minoru, Uchida Hiroshi, Shiraishi Takahisa, Kiguchi Takanori, Konno Toyohiko, Kumada Nobuhiro, Takeshi Yoshimura, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   66th   1237 - 1237   2019

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    DOI: 10.11470/jsapmeeting.2019.1.0_1237

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  • Preparation of Y, Zr-doped HfO2 thin film by PLD method and their characterization.

    Tasiro Yuuki, Mimura Takanori, Shimizu Takao, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   66th   1226 - 1226   2019

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    DOI: 10.11470/jsapmeeting.2019.1.0_1226

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  • Preparation of orientation controlled HfO2-based ferroelectric thick film by puttering method and their electrical properties

    Shimura Reijiro, Mimura Takanori, Shimizu Takao, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   66th   1223 - 1223   2019

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    DOI: 10.11470/jsapmeeting.2019.1.0_1223

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  • [Highlight] Room temperature deposition of Y: HfO2 ferroelectric films by the sputtering method

    Mimura Takanori, Shimizu Takao, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   80th   1372 - 1372   2019

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    DOI: 10.11470/jsapmeeting.2019.2.0_1372

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  • Electric field-induced phase transition of HfO2-based thin films

    Tasiro Yuuki, Mimura Takanori, Shimizu Takao, Katsuya Yoshio, Sakata Osami, Kiguchi Takanori, Shiraishi Takahisa, Konno Toyohiko, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   80th   1371 - 1371   2019

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    DOI: 10.11470/jsapmeeting.2019.2.0_1371

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  • Deposition of epitaxial piezoelectric films for high intensity and high frequency ultrasonic transducers

    ISHIKAWA MUTSUO, UCHIDA YOSUKE, TSUKAMOTO AYAHO, SAITO NAO, ENDO AKITO, YASUI SHINTARO, TABARU MARIE, FUNAKUBO HIROSHI, KUROSAWA MINORU

    JSAP Annual Meetings Extended Abstracts   80th   366 - 366   2019

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    DOI: 10.11470/jsapmeeting.2019.2.0_366

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  • スパッタリング法を用いたY:HfO2強誘電体厚膜の作製とその電気特性評価

    志村礼司郎, 三村和仙, 清水荘雄, 舟窪浩

    電子材料研究討論会講演予稿集   39th   2019

  • Understanding of the basic properties of HfO2-based ferroelectrics using epitaxial films Invited Reviewed

    Hiroshi FUNAKUBO, Takanori MIMURA, Takao SHIMIZU, Takanori KIGUCHI

    OYO BUTURI   87 ( 12 )   921 - 925   2018.12

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    Epitaxially grown HfO2-based ferroelectric films with various orientations were grown. An orthorhombic phase with noncentrosymmetric symmetry was ascertained to be the origin of ferroelectricity for HfO2-based ferroelectricity. Spontaneous polarization and the Curie temperature were evaluated using these epitaxial films. These values are almost compatible with those of conventionally used Pb(Zr0.4Ti0.6)O3 and Sr0.8Bi2.2TaO9 films. These results show that HfO2-based ferroelectric films are a promising candidate not only for conventional applications including ferroelectric memories, but also for novel applications including ferroelectric tunnel junctions.

    DOI: 10.11470/oubutsu.87.12_921

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  • Characterization of piezoelectric property for orientation-controlled (K,Na)NbO3 films prepared by hydrothermal method.

    Tateyama Akinori, Ito Yoshiharu, Nakamura Yoshiko, Simizu Takao, orino Yuichiro, Kurosawa Minoru, Uchida Hiroshi, Shiraishi Takahisa, kKguchi Takanori, Konno Toyohiko, Ishikawa Mutsuo, Kumada Nobuhiro, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2018.2   1315 - 1315   2018.9

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    DOI: 10.11470/jsapmeeting.2018.2.0_1315

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  • Energy band modulation in β-FeSi2 films grown by MOCVD

    Akiyama Kensuke, Nojima Sakiko, Takahashi Ryo, Funakuno Hiroshi

    JSAP Annual Meetings Extended Abstracts   2018.2   3107 - 3107   2018.9

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    DOI: 10.11470/jsapmeeting.2018.2.0_3107

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  • Phase Stability of HfO2-based Ferroelectric Materials and Their Property Control

    Funakubo Hiroshi, Shimizu Takao, Mimura Takanori

    JSAP Annual Meetings Extended Abstracts   2018.2   239 - 239   2018.9

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    DOI: 10.11470/jsapmeeting.2018.2.0_239

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  • Preparation of (Bi, Na) TiO3 - BaTiO3 -based thick film by PLD method and their characterization

    Hasegawa Miyu, Shimizu Takao, Sato Yusuke, Yamaoka Wakiko, Ishida Mirai, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2018.2   1302 - 1302   2018.9

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    DOI: 10.11470/jsapmeeting.2018.2.0_1302

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  • Design methodology of a new piezoelectronic transistor

    Shiotsu Yusaku, Yamamoto Shuu'ichiro, Funakubo Hiroshi, Kurosawa Minoru Kuribayashi, Sugahara Satoshi

    JSAP Annual Meetings Extended Abstracts   2018.2   2950 - 2950   2018.9

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    DOI: 10.11470/jsapmeeting.2018.2.0_2950

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  • Low temperature synthesis of Ta-substituted (K,Na)NbO3 films by hydrothermal method

    Muto Yuta, Shiraishi Takahisa, Kiguchi Takanori, Konno Toyohiko, Tateyama Akinori, Ito Yosiharu, Kurosawa Munoru, Hunakubo Hiroshi, Uchida Hiroshi, Ishikawa Mutsuo

    JSAP Annual Meetings Extended Abstracts   2018.2   1313 - 1313   2018.9

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    DOI: 10.11470/jsapmeeting.2018.2.0_1313

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  • Evaluation of crystal structure and electrical properties for hydrothermally-synthesized (K,Na,Li)NbO3 films

    Shiraishi Takahisa, Muto Yuta, Tateyama Akinori, Ito Yoshiharu, Kiguchi Takanori, Uchia Hiroshi, Funakubo Hiroshi, Konno Toyohiko J.

    JSAP Annual Meetings Extended Abstracts   2018.2   1314 - 1314   2018.9

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    DOI: 10.11470/jsapmeeting.2018.2.0_1314

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  • Distributed parameter analysis of cantilever piezoelectric energy harvesters : Effect of material properties on harvesting performance

    折野 裕一郎, 伊東 良晴, 舟窪 浩, 黒澤 実

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   118 ( 14 )   1 - 6   2018.4

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  • HfO₂系強誘電体薄膜—HfO₂-based Ferroelectric Thin Films—特集 セラミックス電子材料最前線2018

    舟窪 浩, 清水 荘雄

    Ceramics Japan = セラミックス : bulletin of the Ceramic Society of Japan   53 ( 4 )   243 - 247   2018.4

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  • Preparation of Piezoelectric Films on Flexible Substrates by Hydrothermal Method

    Funakubo Hiroshi, Ito Yoshiharu, Tateyama Akinori, Nakamura Yoshiko, Shimizu Takao, Kurosawa Minoru, Uchida Hiroshi, Shiraishi Takahisa, Kiguchi akanori, Konno Toyohiko J., Ishikawa Mutsuo

    JSAP Annual Meetings Extended Abstracts   2018.1   153 - 153   2018.3

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    DOI: 10.11470/jsapmeeting.2018.1.0_153

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  • Photoluminescence properties of N-doped β-FeSi2 films

    Akiyama Kensuke, Takahashi Ryo, Matsumoto Yoshihisa, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2018.1   3386 - 3386   2018.3

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    DOI: 10.11470/jsapmeeting.2018.1.0_3386

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  • Fabrication of Ca2+ doped HfO2 ferroelectric thin films by chemical solution deposition

    Nakayama Shuhei, Funakubo Hiroshi, Uchida Hiroshi

    JSAP Annual Meetings Extended Abstracts   2018.1   1435 - 1435   2018.3

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    DOI: 10.11470/jsapmeeting.2018.1.0_1435

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  • Design of a new piezoelectronic transistor and its device and circuit performances

    Shiotsu Yusaku, Yamamoto Shuu'ichiro, Shuto Yusuke, Hunakubo Hiroshi, Kurosawa Minoru, Sugahara Satoshi

    JSAP Annual Meetings Extended Abstracts   2018.1   3209 - 3209   2018.3

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    DOI: 10.11470/jsapmeeting.2018.1.0_3209

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  • Fabrication of epitaxial CeO2-ZrO2 thin films and their crystal structure analysis

    Shiraishi Takahisa, Choi Sujin, Takao Shimizu, Takanori Kiguchi, Hiroshi Funakubo, Toyohiko Konno

    JSAP Annual Meetings Extended Abstracts   2018.1   1411 - 1411   2018.3

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    DOI: 10.11470/jsapmeeting.2018.1.0_1411

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  • Preparation of Sr-Si film by RF magnetron sputtering method

    Aoyama Kodai, Shimizu Takao, Kuramochi Hideto, Mesuda Masami, Akiike Ryo, Kimura Yoshisato, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2018.1   3055 - 3055   2018.3

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    DOI: 10.11470/jsapmeeting.2018.1.0_3055

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  • Piezoelectronic magnetoresistive-device and its low-voltage MRAM application

    Takamura Yota, Yamamoto Shu'ichiro, Funakubo Hiroshi, Kurosawa Minoru K., Nakagawa Shigeki, Sugahara Satoshi

    JSAP Annual Meetings Extended Abstracts   2018.1   3210 - 3210   2018.3

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    DOI: 10.11470/jsapmeeting.2018.1.0_3210

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  • Growth and property control of ferroelectric nano-rods towards piezoelectric nano-generators

    Yamada Tomoaki, Okamoto Kazuki, Ito Daisuke, Song Jundong, Sluka Tomas, Setter Nava, Sakata Osami, Funakubo Hiroshi, Yoshino Masahito, Nagasaki Takanori

    JSAP Annual Meetings Extended Abstracts   2018.1   213 - 213   2018.3

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    DOI: 10.11470/jsapmeeting.2018.1.0_213

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  • Fabrication and evaluation of (Bi, Na) TiO3 - BaTiO3 based thin film by using PLD method

    Hasegaw Miyu, Shimizu Takao, Sato Yussuke, Yamaoka Wakiko, Ishida Mirai, Uchida Hiroshi, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2018.1   1425 - 1425   2018.3

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    DOI: 10.11470/jsapmeeting.2018.1.0_1425

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  • Preparation of orientation-controlled (K,Na)NbO3 films from various Nb source by hydrothermal method and their film properties.

    Tateyama Akinori, Ito Yoshiharu, Nakamura Yoshiko, Shimizu Takao, Orino Yuichiro, Kurosawa Minoru, Uchida Hiroshi, Shiraishi Takahisa, Kiguchi Takanori, Konno Toyohiko, Ishikawa Mutsuo, Kumada Nobuhiro, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2018.1   1418 - 1418   2018.3

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    DOI: 10.11470/jsapmeeting.2018.1.0_1418

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  • Effect of Local Elastic Field on Domain Structure and Its Formation of Ferroelectric Thin Films with CoherentInterface

    KIGUCHI Takanori, Hiroshi Funakubo, Toyohiko J. Konno

    Materia   57 ( 3 )   97 - 105   2018.3

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    DOI: 10.2320/materia.57.97

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  • Preparation of HfO2-based ferroelectric thick film by sputtering method and their electrical property

    Shimura Reijiro, Mimura Takanori, Shimizu Takao, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   79th   1328 - 1328   2018

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    DOI: 10.11470/jsapmeeting.2018.2.0_1328

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  • 直方晶相ハフニア薄膜のドメイン構造の電子エネルギー損失分光

    木口賢紀, CHOI Sujin, 白石貴久, 三村和仙, 清水荘雄, 舟窪浩, 今野豊彦

    日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM)   31st   2018

  • エピタキシャル成長したHfO2基強誘電体膜における結晶構造の膜厚依存性

    三村和仙, 清水荘雄, 木口賢紀, 赤間章裕, 今野豊彦, 勝矢良雄, 坂田修身, 舟窪浩

    日本セラミックス協会年会講演予稿集(CD-ROM)   2018   2018

  • Characterization of Frequency Dispersion of Non-180° Domain Switching in Rhombohedral PZT by Time-Resolved Synchrotron Radiation X-ray diffraction

    Shimizu Takao, Ehara Yoshitaka, Mimura Takanori, Yasui Shintaro, Yamada Tomoaki, Imai Yasuhiko, Katsuya Yoshio, Sakata Osami, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   79th   1310 - 1310   2018

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    DOI: 10.11470/jsapmeeting.2018.2.0_1310

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  • 網羅的ソフトモードフォノン探索によるHfO2薄膜の強誘電性の理論計算

    森分博紀, 森分博紀, 小西綾子, 小西綾子, 東後篤史, 清水荘雄, 舟窪浩

    日本セラミックス協会年会講演予稿集(CD-ROM)   2018   2018

  • Solid-phase crystallization of highly-oriented Bi2VO5+δ thin films by thermal treatment under uniaxial compression and characterization

    Ito Shoyo, Nanba Ryotaro, Mimura Takanori, Kaneko Satoru, Funakubo Hiroshi, Matsuda Akifumi, Yoshimoto Mamoru

    JSAP Annual Meetings Extended Abstracts   65th   1631 - 1631   2018

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    DOI: 10.11470/jsapmeeting.2018.1.0_1631

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  • Thickness-dependent of ferroelectric property in epitaxial ferroelectric HfO2 film

    Mimura Takanori, Shimizu Takao, Katsuya Yoshio, Sakata Osami, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   65th   1410 - 1410   2018

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    DOI: 10.11470/jsapmeeting.2018.1.0_1410

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  • STEM-EELS analysis of polar orthorhombic phase of Hafnia-based thin films

    Kiguchi Takanori, Shiraishi Takahisa, Mimura Takanori, Shimizu Takao, Funakubo Hiroshi, Konno Toyohiko J.

    JSAP Annual Meetings Extended Abstracts   79th   244 - 244   2018

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    DOI: 10.11470/jsapmeeting.2018.2.0_244

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  • Local-pressure-induced insulation of a V2O3 film with conductive AFM

    Sakai Joe, Alyabyeva Natalia, Wolfman Jerome, Limelette Patrice, Ruyter Antoine, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2017.2   1395 - 1395   2017.8

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    DOI: 10.11470/jsapmeeting.2017.2.0_1395

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  • Fabrication of BaTiO3 thick films by chemical solution deposition and their orientation control using nanosheet interface layer.

    Murase Katsuhiro, Funakubo Hiroshi, Uchida Hiroshi

    JSAP Annual Meetings Extended Abstracts   2017.2   1240 - 1240   2017.8

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    DOI: 10.11470/jsapmeeting.2017.2.0_1240

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  • Effect of growth temperature on the photoluminescent β-FeSi2 films on Si(111)

    Akiyama Kensuke, Matsumoto Yoshihisa, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2017.2   3139 - 3139   2017.8

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    DOI: 10.11470/jsapmeeting.2017.2.0_3139

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  • Effect of heat-treatment condition on crystallization behavior of HfO2-ZrO2 thin film

    Nakayama Shuhei, Hiroshi Funakubo, Hiroshi Uchida

    JSAP Annual Meetings Extended Abstracts   2017.2   1239 - 1239   2017.8

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    DOI: 10.11470/jsapmeeting.2017.2.0_1239

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  • Fabrication of ferroelectric HfO2-based thin films by solid state epitaxy method

    Shiraishi Takahisa, Choi Sujin, Shimizu Takao, Funakubo Hiroshi, Kiguchi Takanori, Konno Toyohiko J.

    JSAP Annual Meetings Extended Abstracts   2017.2   1255 - 1255   2017.8

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    DOI: 10.11470/jsapmeeting.2017.2.0_1255

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  • Phase Stability of Orthorhombic Phase in HfO2-ZrO2 Epitaxial Thin Films

    Kiguchi Takanori, Shiraishi Takahisa, Choi Sujin, Funakubo Hiroshi, Konno Toyyohiko J.

    JSAP Annual Meetings Extended Abstracts   2017.2   1254 - 1254   2017.8

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    DOI: 10.11470/jsapmeeting.2017.2.0_1254

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  • Low temperature preparation of orientation-controlled (K,Na)NbO3 by hydrothermal method and its properties

    Funakubo Hiroshi, Ito Yoshiharu, Tateyama Akinori, Nakamura Yoshiko, Shimizu Takao, Kurosawa Minoru, Uchida Hiroshi, Shiraishi Takahisa, Kiguchi Takanori, Konno Toyohiko, Ishikawa Mutsuo

    JSAP Annual Meetings Extended Abstracts   2017.2   1263 - 1263   2017.8

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    DOI: 10.11470/jsapmeeting.2017.2.0_1263

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  • Investigation of Crystal Structure and Electrical Properties of ZrO2-based Epitaxial Thin Films

    Choi Sujin, Shiraisi Takahisa, Kiguchi Takanori, Shimizu Takao, Funakubo Hiroshi, Konno Toyohiko

    JSAP Annual Meetings Extended Abstracts   2017.2   1253 - 1253   2017.8

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    DOI: 10.11470/jsapmeeting.2017.2.0_1253

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  • Nonlinear Electric Field Dependence of Electrocaloric Effect in (001)-epitaxial (Ba, Sr)TiO3 Thin Films

    S. Matsuo, T. Yamada, M. Yoshino, T. Nagasaki, T. Kamo, H. Funakubo

    Proc. IEEE ISAF-IWATMD-PFM 2017   68-70   2017.8

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    DOI: 10.1109/ISAF.2017.8000214

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  • Effect of growth temperature on the photoluminescence properties of β-FeSi2 films

    Akiyama Kensuke, Matsumoto Yoshihisa, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2017.1   3192 - 3192   2017.3

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    DOI: 10.11470/jsapmeeting.2017.1.0_3192

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  • Indirect measurement of electrocaloric effect in (Ba,Sr)TiO3 thin films by positive-up-negative-down method

    Yamada Tomoaki, Matsuo Shogo, Kamo Takafumi, Funakubo Hiroshi, Yoshino Masahito, Nagasaki Takanori

    JSAP Annual Meetings Extended Abstracts   2017.1   1286 - 1286   2017.3

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    DOI: 10.11470/jsapmeeting.2017.1.0_1286

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  • Fabrication of epitaxial Fe:HfO2 thin films and their characterization

    Shiraishi Takahisa, Choi Sujin, Shimizu Takao, Funakubo Hiroshi, Kiguchi Takanori, Konno Toyohiko J.

    JSAP Annual Meetings Extended Abstracts   2017.1   1301 - 1301   2017.3

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    DOI: 10.11470/jsapmeeting.2017.1.0_1301

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  • 網羅的ソフトモードフォノン探索によるHfO2薄膜の強誘電性の理論計算

    森分博紀, 東後篤史, 舟窪浩, 清水荘雄

    JFCC研究成果集   2017   2017

  • Electric-field-induced lattice distortions in epitaxial BiFeO3 thin films

    Nakashima Seiji, Fujisawa Hironori, Sakata Osami, Funakubo Hiroshi, Shimizu Takao, Ichinose Daichi, Imai Yasuhiko, Shimizu Masaru

    JSAP Annual Meetings Extended Abstracts   78th   1245 - 1245   2017

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    DOI: 10.11470/jsapmeeting.2017.2.0_1245

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  • Growth of {100}-oriented epitaxial Y2O3-HfO2 thin films by sputtering method and their characterization

    Suzuki Taisei, Mimura Takanori, Shimizu Takao, Uchida Hiroshi, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   78th   1256 - 1256   2017

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    DOI: 10.11470/jsapmeeting.2017.2.0_1256

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  • 網羅的ソフトモードフォノン探索によるHfO2薄膜の強誘電性の理論計算

    森分博紀, 森分博紀, 小西綾子, 小西綾子, 東後篤史, 清水荘雄, 舟窪浩

    日本物理学会講演概要集(CD-ROM)   72 ( 2 )   2017

  • Y2O3-HfO2エピタキシャル薄膜の構成相の決定因子

    鈴木大生, 三村和仙, 清水荘雄, 内田寛, 舟窪浩, 舟窪浩

    セラミックス基礎科学討論会講演要旨集   55th   2017

  • Growth of epitaxial Y2O3-doped HfO2 thin films by Sputtering method and their characterization

    Suzuki Taisei, Mimura Takanori, Shimizu Takao, Uchida Hiroshi, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   64th   1296 - 1296   2017

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    DOI: 10.11470/jsapmeeting.2017.1.0_1296

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  • HfO2基強誘電体のドメイン構造と電場誘起スイッチング

    清水荘雄, 三村和仙, 木口賢紀, 白石貴久, 赤間章裕, 今野豊彦, 坂田修身, 勝矢良雄, 舟窪浩

    エレクトロセラミックス研究討論会講演予稿集   37th   2017

  • Negative Electrocaloric Effect in Epitaxial Y-doped HfO2 Thin Film

    Matsuo Shogo, Yamada Tomoaki, Mimura Takanori, Shimizu Takao, Funakubo Hiroshi, Yoshino Masahito, Nagasaki Takanori

    JSAP Annual Meetings Extended Abstracts   78th   1270 - 1270   2017

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    DOI: 10.11470/jsapmeeting.2017.2.0_1270

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  • Nanoscale Domain Dot Writing on HfO2-Based Ferroelectric Thin Films

    Hiranaga Yoshiomi, Mimura Takanori, Shimizu Takao, Funakubo Hiroshi, Cho Yasuo

    JSAP Annual Meetings Extended Abstracts   78th   1259 - 1259   2017

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    DOI: 10.11470/jsapmeeting.2017.2.0_1259

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  • Temperature stability of ferroelectric Y2O3-HfO2

    Mimura Takanori, Shimizu Takao, Kiguchi Takanori, Akama Akihiro, Konno Toyohiko, Katsuya Yoshio, Sakata Osami, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   78th   1257 - 1257   2017

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    DOI: 10.11470/jsapmeeting.2017.2.0_1257

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  • Dynamic Observation of Nanoscale Domain Switching Behaviors Using Scanning Nonlinear Dielectric Microscopy

    Hiranaga Yoshiomi, Mimura Takanori, Shimizu Takao, Funakubo Hiroshi, Cho Yasuo

    JSAP Annual Meetings Extended Abstracts   64th   1294 - 1294   2017

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    DOI: 10.11470/jsapmeeting.2017.1.0_1294

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  • Time Response of Crystal Structure Under Applied Electric Field in Tetragonal Pb(Zr,Ti)O3 Films

    Sato Tomoya, Ichinose Daichi, Mimura Takanori, Nemoto Yuichi, Shimizu Takao, Imai Yasuhiko, Uchida Hiroshi, Sakata Osami, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   64th   1269 - 1269   2017

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    DOI: 10.11470/jsapmeeting.2017.1.0_1269

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  • Multi-domain Structures and Relaxation of In-plane Strain in Epitaxial PZT Films

    Sato Tomoya, Ichinose Daichi, Mimura Takanori, Shimizu Takao, Yamada Tomoaki, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   78th   1266 - 1266   2017

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    DOI: 10.11470/jsapmeeting.2017.2.0_1266

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  • Stability of ferroelectric phase in epitaxial HfO2-based films: RE2O3-HfO2 vs ZrO2-HfO2

    Mimura Takanori, Katayama Kiriha, Shimizu Takao, Kiguchi Takanori, Akama Akihiro, Konno Toyohiko, Sakata Osami, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   64th   1297 - 1297   2017

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    DOI: 10.11470/jsapmeeting.2017.1.0_1297

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  • Y添加HfO₂薄膜における強誘電ドメイン反転のSNDM観察 (磁気記録・情報ストレージ)

    平永 良臣, 長 康雄, 三村 和仙, 清水 荘雄, 舟窪 浩

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   116 ( 348 )   35 - 39   2016.12

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  • Y添加HfO₂薄膜における強誘電ドメイン反転のSNDM観察 (マルチメディアストレージ)

    平永 良臣, 長 康雄, 三村 和仙, 清水 荘雄, 舟窪 浩

    映像情報メディア学会技術報告 = ITE technical report   40 ( 44 )   35 - 39   2016.12

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  • 東工大と東北大など、酸化ハフニウム基強誘電体の基礎特性を解明酸化ハフニウム基強誘電体の基礎特性を解明 ―超高密度で高速動作する不揮発性メモリー実現に道―

    清水荘雄, 舟窪浩, 今野豊彦, 木口賢紀, 坂田修身

    日経プレスリリース   2016.9

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  • Strain-induced resistance change in a V2O3 film transferred on a piezoelectric device

    Sakai Joe, Negulescu Beatrice, Bavencoffe Maxime, Limelette Patrice, Wolfman Jerome, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2016.2   1308 - 1308   2016.9

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    DOI: 10.11470/jsapmeeting.2016.2.0_1308

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  • Annealing effects on conduction type in Mg2Si thin films

    Kurokawa Mao, Uehara Mutsuo, Shimizu Takao, Akiyama Kensuke, Matsushima Masaaki, Uchida Hiroshi, Kimura Yoshisato, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2016.2   2658 - 2658   2016.9

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    DOI: 10.11470/jsapmeeting.2016.2.0_2658

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  • Synthesis and Hydrogen Evolution over Photocatalytic β-FeSi2/ SiC Composite Powder

    Akiyama Kensuke, Motoizumi Yu, Okuda Tetsuya, Funakubo Hiroshi, Irie Hiroshi, Matsumoto Yoshihisa

    JSAP Annual Meetings Extended Abstracts   2016.2   3367 - 3367   2016.9

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    DOI: 10.11470/jsapmeeting.2016.2.0_3367

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  • Growth of orientation controlled epitaxial (Bi, K)TiO3 films by pulse laser deposition.

    Nemoto Yuichi, Ichinose Daichi, Shimizu Takao, Uchida Hiroshi, Sato Yusuke, Yamaoka Wakiko, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2016.2   1232 - 1232   2016.9

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    DOI: 10.11470/jsapmeeting.2016.2.0_1232

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  • Domain structure control in ferroelectric Pb(Zr,Ti)O3 nano-rods by charge screening

    Yamada Tomoaki, Ito Daisuke, Sluka Tomas, Setter Nava, Sakata Osami, Namazu Takahiro, Funakubo Hiroshi, Yoshino Masahito, Nagasaki Takanori

    JSAP Annual Meetings Extended Abstracts   2016.2   1230 - 1230   2016.9

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    DOI: 10.11470/jsapmeeting.2016.2.0_1230

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  • Photoluminescence properties of β-FeSi2 films

    Akiyama Kensuke, Matsumoto Yoshihisa, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2016.2   2917 - 2917   2016.9

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    DOI: 10.11470/jsapmeeting.2016.2.0_2917

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  • 依頼講演 HfO₂基強誘電体薄膜の作製と特性評価 (シリコン材料・デバイス)

    舟窪 浩, 清水 荘雄, 片山 きりは, 三村 和仙

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   116 ( 118 )   5 - 8   2016.6

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  • 強誘電性Y:HfO₂薄膜におけるナノスケールドメイン反転 (磁気記録・情報ストレージ)

    陳 舟, 平永 良臣, 清水 荘雄, 片山 きりは, 三村 和仙, 舟窪 浩, 長 康雄

    電子情報通信学会技術研究報告 = IEICE technical report : 信学技報   115 ( 490 )   29 - 32   2016.3

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  • Fabrication of oriented PZT thick films using nenosheet interface layer

    Miyazaki Ryuto, Ichinose Daichi, Kim Jin Woong, Shima Hiromi, Akama Akihiro, Kiguchi Takanori, Nishida Ken, Toyohiko Konno, Funakubo Hiroshi, Uchida Hiroshi

    JSAP Annual Meetings Extended Abstracts   2016.1   1217 - 1217   2016.3

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    DOI: 10.11470/jsapmeeting.2016.1.0_1217

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  • Photoluminescence properties of post-annealed β-FeSi2 films

    Akiyama Kensuke, Matsumoto Yoshihisa, Kiguchi Takanori, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2016.1   2876 - 2876   2016.3

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    DOI: 10.11470/jsapmeeting.2016.1.0_2876

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  • Pulse laser growth of tetragonal (Bi,K)TiO3 epitaxial films and their piezoelectric properties

    Nemoto yuichi, Ichinose Daichi, Shimizu Takao, Uchida Hiroshi, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2016.1   1227 - 1227   2016.3

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    DOI: 10.11470/jsapmeeting.2016.1.0_1227

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  • Layer thickness dependences of piezoelectric response in tetragonal/rhombohedral Pb(ZrxTi1-x)O3 artificial superlattice thin films

    Yamada Tomoaki, Ebihara Youhei, Sakata Osami, Morioka Hitoshi, Kiguchi Takanori, Shimizu Takao, Funakubo Hiroshi, Yoshino Masahito, Nagasaki Takanori

    JSAP Annual Meetings Extended Abstracts   2016.1   1218 - 1218   2016.3

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    DOI: 10.11470/jsapmeeting.2016.1.0_1218

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  • Effect of strain on thermoelectric property in Mg2Si thin film

    Kurokawa Mao, Uehara Mutsuo, Ichinose Daichi, Shimizu Takao, Akiyama Kensuke, Matsushima Masaaki, Uchida Hiroshi, Kimura Yoshisato, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2016.1   1927 - 1927   2016.3

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    DOI: 10.11470/jsapmeeting.2016.1.0_1927

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  • 強誘電性Y:HfO₂薄膜におけるナノスケールドメイン反転—Nanoscale Domain Inversion in Ferroelectric Y:HfO₂ Thin Film

    陳 舟, 平永 良臣, 清水 荘雄, 片山 きりは, 三村 和仙, 舟窪 浩, 長 康雄

    映像情報メディア学会技術報告 = ITE technical report   40 ( 7 )   29 - 32   2016.3

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    Other Link: https://ndlsearch.ndl.go.jp/books/R000000004-I027221348

  • Domain structure of dominantly in-plane-polarized Pb(Zr,Ti)O3 thin film

    Ichinose Daichi, Ehara Yoshitaka, Shimizu Takao, Sakata Osami, Yamada Tomoaki, Gruverman Alexei, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   77th   1217 - 1217   2016

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    DOI: 10.11470/jsapmeeting.2016.2.0_1217

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  • 正方晶Pb(Zr,Ti)O3薄膜ドメイン構造の配向及び歪み制御

    一ノ瀬大地, 中島崇明, 江原祥隆, 江原祥隆, 及川貴弘, 清水荘雄, 坂田修身, 坂田修身, 山田智明, 山田智明, 舟窪浩

    エレクトロセラミックス研究討論会講演予稿集   36th   2016

  • Elastic interaction between 90° domains and coherent interface in ferroelectric thin film Reviewed

    Takanori Kiguchi, Kenta Aoyagi, Takahisa Shiraishi, Hiroshi Funakubo, Toyohiko J. Konno

    Materia Japan   Vol. 55 ( No. 12 )   585 - 585   2016

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    DOI: 10.2320/materia.55.585

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  • Investigation of oxygen vacancies in BaTiO3 using Raman spectroscopy

    Fukushima Hiroaki, Oka Hirotaka, Kozu Tomomi, Funakubo Hiroshi, Uchida Hiroshi, Moriwake Hiroki, Shima Hiromi, Nishida Ken

    JSAP Annual Meetings Extended Abstracts   63rd   1212 - 1212   2016

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    DOI: 10.11470/jsapmeeting.2016.1.0_1212

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  • Change of crystal structure and properties with heat treatment in ferroelectric HfO2-based films

    Mimura Takanori, Shimizu Takao, Uchida Hiroshi, Kiguchi Takanori, Akama Akihiro, Konno Toyohiko, Sakata Osami, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   77th   1231 - 1231   2016

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    DOI: 10.11470/jsapmeeting.2016.2.0_1231

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  • 固相成長法を用いた強誘電体HfO2基薄膜のエピタキシャル成長と特性評価:

    三村和仙, 片山きりは, 清水荘雄, 内田寛, 木口賢紀, 赤間章裕, 今野豊彦, 舟窪浩

    セラミックス基礎科学討論会講演要旨集   54th   2016

  • エピタキシャルおよび配向性YドープHfO2薄膜の強誘電性

    清水荘雄, 片山きりは, 三村和仙, 木口賢紀, 白石貴久, 赤間章裕, 今野豊彦, 坂田修身, 舟窪浩

    日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM)   29th   2016

  • Domain Inversion in Ferroelectric Y:HfO2 Thin Film by Using SNDM

    Chen Zhou, Hiranaga Yoshiomi, Shimizu Takao, Katayama Kiriha, Mimura Takanori, Funakubo Hiroshi, Cho Yasuo

    JSAP Annual Meetings Extended Abstracts   63rd   1237 - 1237   2016

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    DOI: 10.11470/jsapmeeting.2016.1.0_1237

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  • Fabrication of {110} one-axis oriented perovskite-type oxide thin films and their crystal structure analysis

    Sato Tomoya, Kimura Junichi, Ichinose Daichi, Mimura Takanori, Funakubo Hiroshi, Uchiyama Kiyoshi

    JSAP Annual Meetings Extended Abstracts   63rd   1231 - 1231   2016

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  • 配向制御したHfO2基強誘電体の作製とその強誘電特性評価

    舟窪浩, 清水荘雄, 片山きりは, 三村和仙, 木口賢紀, 赤間章裕, 今野豊彦, 内田寛

    日本セラミックス協会年会講演予稿集(CD-ROM)   2016   2016

  • Domain structure change by applying voltage of dominantly in-plane-polarized Pb(Zr,Ti)O3 thin film

    Ichinose Daichi, Ehara Yoshitaka, Shimizu Takao, Sakata Osami, Yamada Tomoaki, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   63rd   1219 - 1219   2016

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    DOI: 10.11470/jsapmeeting.2016.1.0_1219

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  • Electric field induced change of the crystal structure in YO1.5-HfO2 thin film

    Shimizu Takao, Mimura Takanori, Katayama Kiliha, Kiguchi Takanori, Akama Akihiro, Konno Toyohiko, Sakata Osami, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   77th   1229 - 1229   2016

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    DOI: 10.11470/jsapmeeting.2016.2.0_1229

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  • Growth of orientation-contolled ferroelectric HfO2 thin films by solid phase crystallization and their characterization

    Takanori Mimura, Kiriha Katayama, Takao Shimizu, Hiroshi Uchida, Takanori Kiguchi, Akihiro Akama, Toyohiko Konno, Osami Sakata, Hiroshi Funakubo

    JSAP Annual Meetings Extended Abstracts   63rd   1236 - 1236   2016

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    DOI: 10.11470/jsapmeeting.2016.1.0_1236

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  • HfO2薄膜における強誘電相転移に関する第一原理計算

    森分博紀, 小西綾子, 桑原彰秀, 東後篤史, 清水荘雄, 舟窪浩

    日本セラミックス協会年会講演予稿集(CD-ROM)   2016   2016

  • 3P4-13 Characteristics of large amplitude vibration velocity of hydrothermally deposited KNbO_3 films ultrasonic transducers using thickness vibration mode

    Ishikawa Mutsuo, Uchida Yousuke, Kosuge Nobuaki, Shibuya Motoko, Funakubo Hiroshi, Kurosawa Minoru

    Proceedings of Symposium on Ultrasonic Electronics   36   "3P4 - 13-1"-"3P4-13-2"   2015.11

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    DOI: 10.24492/use.36.0__3p4-13-1_

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  • Interfacial Dislocations in (111) Oriented (Ba0.7Sr0.3)TiO3 Films on SrTiO3 Single Crystal Reviewed

    X.Shen, T.Yamada, R.Lin, T.Kamo, H.Funakubo, D.Wu, H.L.Xin, D.Su

    Applied Physics Letters   107   141605-1-5   2015.10

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  • Growth of epitaxial orthorhombic HfO2-based films on Si substrate

    Katayama Kiliha, Shimizu Takao, Kiguchi Takanori, Akama Akihiro, Toyohiko Konno, Uchida Hiroshi, Sakata Osami, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2015.2   1182 - 1182   2015.8

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    DOI: 10.11470/jsapmeeting.2015.2.0_1182

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  • Preferential crystal growth of BaTiO3 films using nenosheet interface layer

    Noguchi Keito, Moki Shota, Funakubo Hiroshi, Uchida Hiroshi

    JSAP Annual Meetings Extended Abstracts   2015.2   1166 - 1166   2015.8

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    DOI: 10.11470/jsapmeeting.2015.2.0_1166

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  • Fabrication of Highly {110}-oriented Ba(Ce,Y)O3 Perovskite Thin Films by RF-magnetron Sputtering Method

    Sato Tomoya, Ichinose Daichi, Funakubo Hiroshi, Uchiyama Kiyoshi

    JSAP Annual Meetings Extended Abstracts   2015.2   1165 - 1165   2015.8

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    DOI: 10.11470/jsapmeeting.2015.2.0_1165

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  • Phase transition properties and c/a ratio in pulsed laser-deposited V2O3 thin films

    Sakai Joe, Limelette Patrice, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2015.2   1299 - 1299   2015.8

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    DOI: 10.11470/jsapmeeting.2015.2.0_1299

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  • Domain Structure in epitaxial orthorhombic HfO2-based films

    Shimizu Takao, Katayma Kiliha, Kiguchi Takanori, Akama Takahiro, Konno Toyohiko, Uchida Hiroshi, Sakata Osami, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2015.2   1183 - 1183   2015.8

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    DOI: 10.11470/jsapmeeting.2015.2.0_1183

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  • Preparation of Ca-Mg-Si Films by Sputtering Method and Their Properties

    Uehara Mutsuo, Kurokawa Mao, Akiyama Kensuke, Matsushima Masaaki, Uchida HIroshi, Kimura Yoshisato, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2015.2   2650 - 2650   2015.8

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    DOI: 10.11470/jsapmeeting.2015.2.0_2650

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  • Domain structure in {100}- and {111}-oriented Pb(Zr,Ti)O3 nanorods and its size dependence

    Yamada Tomoaki, Ito Daisuke, Sakata Osami, Kuroishi Junki, Namazu Takahiro, Shimizu Takao, Funakubo Hiroshi, Yoshino Masahito, Nagasaki Takanori

    JSAP Annual Meetings Extended Abstracts   2015.2   1177 - 1177   2015.8

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    DOI: 10.11470/jsapmeeting.2015.2.0_1177

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  • 東工大と東北大、薄膜でも特性劣化しない強誘電体エピタキシャル膜を作製

    清水荘雄, 舟窪浩, 今野豊彦, 木口賢紀

    日刊工業新聞   2015.7

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  • Ferroelectricity in HfO2-based epitaxial thin film

    Shimizu Takao, Katayama Kiliha, Hiroshi Funakubo

    JSAP Annual Meetings Extended Abstracts   2015.1   107 - 107   2015.2

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    DOI: 10.11470/jsapmeeting.2015.1.0_107

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  • Growth and Thermoelectric Properties of Ca-Si Films by Sputtering Method

    Uehara Mutsuo, Arai Hiroki, Ogawa Shota, Akiyama Kensuke, Matsushima Masaaki, Uchida Hiroshi, Kimura Yoshisato, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2015.1   1827 - 1827   2015.2

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    DOI: 10.11470/jsapmeeting.2015.1.0_1827

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  • Crystallographic analysis of epitaxial HfO2-based films containing orthorhombic phase

    Katayama Kiliha, Shimizu Takao, Yokouchi Tatsuhiko, Shiraishi Takahisa, Oikawa Takahiro, Kiguchi Takanori, Akama Akihiro, Konno Toyohiko, Uchida Hiroshi, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2015.1   1187 - 1187   2015.2

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    DOI: 10.11470/jsapmeeting.2015.1.0_1187

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  • Preparation of Hydrothermally-synthesized Flexible (K,Na)NbO3 Films and Their Characterization

    Shiraishi Takahisa, Kaneko Noriyuki, Kurosawa Minoru, Uchida Hiroshi, Suzuki Yasuhiro, Kobayashi Takeshi, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2015.1   1197 - 1197   2015.2

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    DOI: 10.11470/jsapmeeting.2015.1.0_1197

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  • Fabrication and evaluation of HfO2-ZrO2 ultrathin films by chemical solution deposition

    Abe Chihoko, Shiokawa Marina, Shiraishi Takahisa, Shimizu Takao, Funakubo Hiroshi, Uchida Hiroshi

    JSAP Annual Meetings Extended Abstracts   2015.1   1186 - 1186   2015.2

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    DOI: 10.11470/jsapmeeting.2015.1.0_1186

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  • Photoluminescence properties of β-FeSi2 grown on Au-coated Si substrates

    Akiyama Kensuke, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2015.1   2756 - 2756   2015.2

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    DOI: 10.11470/jsapmeeting.2015.1.0_2756

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  • Suppressed Polar Distortion with Enhanced Curie Temperature in In-plane 90º-domain Structure of a-axis Oriented PbTiO3 Film Reviewed

    H.Morioka, T.Yamada, A.K.Tagantsev, R.Ikariyama, T.Nagasaki, T.Kurosawa, H.Funakubo

    Applied Physics Letters   106   042905-1-5   2015.1

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    DOI: 10.1063/1.4906861

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  • Photoluminescent iron disilicide on modified Si surface by using silver

    Kensuke Akiyama, Kensuke Akiyama, Shinichi Motomura, Masaru Itakura, Yasuhiro Naganuma, Hiroshi Funakubo

    Japanese Journal of Applied Physics   54 ( 7 )   07JB04   2015.1

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    DOI: 10.7567/JJAP.54.07JB04

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  • KTaO3基板上Pb(Zr,Ti)O3薄膜のZr/(Zr+Ti)比による分極軸制御

    一ノ瀬大地, 中島崇明, 江原祥隆, 及川貴弘, 清水荘雄, 山田智明, 山田智明, 舟窪浩

    セラミックス基礎科学討論会講演要旨集   53rd   2015

  • PdO//Pdバッファ層を用いた{110}配向Pb(Zr,Ti)O3(PZT)薄膜の作製と評価

    内山潔, 大島直也, 田中宏樹, 江原祥隆, 及川貴弘, 佐藤智也, 内田寛, 舟窪浩

    日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM)   28th   2015

  • Effect of Temperature and In-plane Strain on Domain Structure in (100)/(001)-oriented Epitaxial PbTiO3 Films

    Funakubo Hiroshi, Nakashima Takaaki, Ichinose Daichi, Ehara Yoshitaka, Nakasjimama Mitsumasa, Shimizu Takao, Kobayashi Takeshi, Iijima Takashi, Yamada Tomoaki

    JSAP Annual Meetings Extended Abstracts   76th   1178 - 1178   2015

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    DOI: 10.11470/jsapmeeting.2015.2.0_1178

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  • PZT膜における温度によるドメイン構造転移

    舟窪浩, 舟窪浩, 一ノ瀬大地, 中島崇明, 江原祥隆, 及川貴弘, 清水荘雄, 山田智明, 山田智明

    エレクトロセラミックス研究討論会講演予稿集   35th   2015

  • Domain control of Pb(Zr, Ti)O3 thin films by Zr/(Zr+Ti) ratio

    Ichinose Daichi, Nakashima Takaaki, Ehara Yoshitaka, Oikawa Takahiro, Shimizu Takao, Yamada Tomoaki, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   62nd   1175 - 1175   2015

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    DOI: 10.11470/jsapmeeting.2015.1.0_1175

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  • Effect of Zr/(Zr+Ti) Ratio on Domain Structure in Tetragonal Pb(Zr,Ti)O3 Thin Film

    Ichinose Daichi, Nakashima Takaaki, Ehara Yoshitaka, Shimizu Takao, Sakata Osami, Yamada Tomoaki, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   76th   1179 - 1179   2015

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    DOI: 10.11470/jsapmeeting.2015.2.0_1179

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  • Quantitative Analysis of Crystal Structure Change Under electric Filed by XRD Measurement for (100)/(001)-oriented Tetragonal Pb(Zr, Ti)O3 Films

    Funakubo Hiroshi, Oshima Naoya, Shimizu Takao, Nakajima Mitsumasa, Ehara Yoshitaka, Oikawa Takahiro, Uchida Hiroshi

    JSAP Annual Meetings Extended Abstracts   76th   1181 - 1181   2015

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    DOI: 10.11470/jsapmeeting.2015.2.0_1181

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  • 配向制御によるMOCVD製Pb(Zr,Ti)O3薄膜の圧電特性向上

    大島直也, 江原祥隆, 及川貴弘, 内田寛, 舟窪浩

    セラミックス基礎科学討論会講演要旨集   53rd   2015

  • Perovskite型構造圧電体薄膜の開発~未来材料へ向けて~

    安井伸太郎, 伊藤満, 舟窪浩

    日本セラミックス協会年会講演予稿集(CD-ROM)   2015   2015

  • a軸優先配向エピタキシャルPbTiO3膜の特性

    中島崇明, 一ノ瀬大地, 江原祥隆, 清水荘雄, 小林健, 飯島高志, 山田智明, 山田智明, 舟窪浩

    セラミックス基礎科学討論会講演要旨集   53rd   2015

  • 1P3-4 Development of matrix array ultrasonic transducer using KNbO_3 piezoelectric films(Poster Session)

    Ishikawa Mutsuo, Seino Mizuki, Endo Akito, Shiraishi Takahisa, Kurosawa Minoru, Funakubo Hiroshi

    Proceedings of Symposium on Ultrasonic Electronics   35   85 - 86   2014.12

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    DOI: 10.24492/use.35.0_85

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  • J2240201 Influence of substrate clamping on piezoelectric property in PZT thin films and nanorods

    YAMADA Tomoaki, YASUMOTO Jun, SAKATA Osami, YOSHINO Masahito, NAGASAKI Takanori, FUNAKUBO Hiroshi

    Mechanical Engineering Congress, Japan   2014   "J2240201 - 1"-"J2240201-2"   2014.9

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    Large piezoelectricity in Pb(Zr_xTi_<1-x>)O_3 (PZT) attracts attentions for developing small energy conversion devices such as micro actuators and sensors. It has been theoretically and experimentally shown that the piezoelectric response in the PZT film is strongly suppressed as the film is mechanically clamped by the substrate. In this presentation, we tried two different approaches to solve this problem. We first investigated the orientation dependence of the clamping effect. It was found that the (111) film showed a negligibly small clamping effect unlike the (001) film. Another approach was to grow nanorods, which were almost free from the substrate clamping. The (001) nanorods showed twice larger piezoelectric constant as compared with the (001) film.

    DOI: 10.1299/jsmemecj.2014._j2240201-

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  • Fabrication and Characterization of Orthorhombic Epitaxial HfO2-based Thin Films

    Shimizu Takao, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2014.2   3922 - 3922   2014.9

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    DOI: 10.11470/jsapmeeting.2014.2.0_3922

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  • Analysis of Electrical Properties and Crystal Structure for (Hf,Zr)O2 Thin Films

    Shiraishi Takahisa, Katayama Kiliha, Yokouchi Tatsuhiko, Shimizu Takao, Oikawa Takahiro, Uchida Hiroshi, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2014.2   3923 - 3923   2014.9

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    DOI: 10.11470/jsapmeeting.2014.2.0_3923

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  • Orientation Dependence of Converse Piezoelectric Effect in Tetragonal PZT Thin Films and Nanorods

    Yamada Tomoaki, Yasumoto Jun, Ito Daisuke, Sakata Osami, Imai Yasuhiko, Shiraishi Takahisa, Shimizu Takao, Funakubo Hiroshi, Yoshino Masahito, Nagasaki Takanori

    JSAP Annual Meetings Extended Abstracts   2014.2   3885 - 3885   2014.9

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    DOI: 10.11470/jsapmeeting.2014.2.0_3885

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  • Unipolar actuation of piezoelectric MEMS microcantilevers with pulse poled PZT thin films

    kobayashi takeshi, makimoto natsumi, suzuki yasuhiro, funakubo hiroshi, maeda ryutaro

    JSAP Annual Meetings Extended Abstracts   2014.2   3889 - 3889   2014.9

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    DOI: 10.11470/jsapmeeting.2014.2.0_3889

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  • Oriental control of bismuth ferrite films using buffer layer and their characterization

    Nagasaka Kohei, Kim Jin Woong, Shima Hiromi, Nishida Ken, Oshima Naoya, Funakubo Hiroshi, Uchida Hiroshi

    JSAP Annual Meetings Extended Abstracts   2014.2   3900 - 3900   2014.9

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    DOI: 10.11470/jsapmeeting.2014.2.0_3900

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  • Aged deterioration of pulse poling on the piezoelectric property and microstructure of microfabricated PZT thin films

    Makimoto Natsumi, Suzuki Yasuhiro, Maeda Ryutaro, Funakubo Hiroshi, Kobayashi Takeshi

    JSAP Annual Meetings Extended Abstracts   2014.2   3863 - 3863   2014.9

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    DOI: 10.11470/jsapmeeting.2014.2.0_3863

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  • Dependence of Deposition Conditions on Proton Conductive Oxide Thin Films by RF Magnetron Sputtering

    Sato Tomoya, Funakubo Hiroshi, Inoue Takaaki, Uchiyama Kiyoshi

    JSAP Annual Meetings Extended Abstracts   2014.2   3864 - 3864   2014.9

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    DOI: 10.11470/jsapmeeting.2014.2.0_3864

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  • Fabrication of oriented solid-solution films in BaTiO3-Bi(Mg1/2Ti1/2)O3 system by chemical solution deposition technique

    Moki Shota, Kaneko Noriyuki, Kimura Junichi, Funakubo HIroshi, Uchida HIroshi

    JSAP Annual Meetings Extended Abstracts   2014.2   3860 - 3860   2014.9

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    DOI: 10.11470/jsapmeeting.2014.2.0_3860

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  • Phase Stability in Bi(Mg1/2Ti1/2)O3–Bi(Zn1/2Ti1/2)O3 Solid Solution Films

    Oikawa Takahiro, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2014.2   3881 - 3881   2014.9

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    DOI: 10.11470/jsapmeeting.2014.2.0_3881

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  • Surface modification of Y2O3:Er,Yb upconversion nanoparticles prepared by laser ablation in water

    Kobayashi Hiroki, P. CHEWCHINDA, Chewchinda Pattarin, inoue yasunori, FUNAKUBO HIROSHI, HARA MICHIKAZU, ODAWARA OSAMU, Wada Hiroyuki

    Japanese Journal of Applied Physics   53 ( 5 )   2014.5

  • Hydrogen-Evolution by Photocatalyst β-FeSi2 on Si-powder

    Akiyama Kensuke, Takahashi Ryo, Yoshimizu Masaharu, Funakubo Hiroshi, Irie Hiroshi, Matsumoto Yoshihisa

    JSAP Annual Meetings Extended Abstracts   2014.1   2949 - 2949   2014.3

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    DOI: 10.11470/jsapmeeting.2014.1.0_2949

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  • Ferroelectricity of HfO2-based films

    Funakubo Hiroshi, Shimizu Takao, Yokouchi Tatsuhiko, Oikawa Takahiro, Shiraishi Takahisa

    JSAP Annual Meetings Extended Abstracts   2014.1   134 - 134   2014.3

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    DOI: 10.11470/jsapmeeting.2014.1.0_134

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  • Investigation into the PZT thin films of polarization direction for the applications to the VEH

    Suzuki Yasuhiro, Makimoto Natumi, Hunakubo Hiroshi, Maeda Ryutaro, Kobayashi Takeshi

    JSAP Annual Meetings Extended Abstracts   2014.1   1140 - 1140   2014.3

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    DOI: 10.11470/jsapmeeting.2014.1.0_1140

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  • Deposition of Crystallized Proton Conductive Oxide by RF Magnetron Sputtering

    Sato Tomoya, Uchiyama Kiyoshi, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2014.1   1374 - 1374   2014.3

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    DOI: 10.11470/jsapmeeting.2014.1.0_1374

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  • Ferroelectric property of Hf0.5Zr0.5)O2

    Yokouchi Tatsuhiko, Shimizu Takao, Oikawa Takahiro, Shiraishi Takahisa, Funakubo Hiroshi, Kiguchi Takanori, Akama Akihiro, Toyohiko J. Konno, Kim Dong Jik, Gruverman Alexei

    JSAP Annual Meetings Extended Abstracts   2014.1   1179 - 1179   2014.3

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    DOI: 10.11470/jsapmeeting.2014.1.0_1179

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  • Influence of pulse poling condition on the piezoelectric property of microfabricated PZT thin films

    Makimoto Natsumi, Yasuhiro Suzuki, Maeda Ryutaro, Oikawa Takahiro, Funakubo Hiroshi, Kobayashi Takeshi

    JSAP Annual Meetings Extended Abstracts   2014.1   1139 - 1139   2014.3

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    DOI: 10.11470/jsapmeeting.2014.1.0_1139

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  • Energy Harvesting Property of Hydrothermally-Synthesized (K,Na)NbO3 Films

    Shiraishi Takahisa, Kaneko Noriyuki, Kurosawa Minoru, Uchida Hiroshi, Suzuki Yasuhiro, Kobayashi Takeshi, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   2014.1   1152 - 1152   2014.3

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    DOI: 10.11470/jsapmeeting.2014.1.0_1152

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  • 低次元酸素八面体構造を有するシリケート誘電体における誘電特性の高温安定性

    木村純一, 谷口博基, 飯島高志, 清水荘雄, 安井伸太郎, 伊藤満, 舟窪浩

    日本セラミックス協会年会講演予稿集(CD-ROM)   2014   2014

  • ドメイン体積分率制御した(100)/(001)配向Pb(Zr,Ti)O3膜の圧電挙動の観察

    大島直也, 江原祥隆, 及川貴弘, 舟窪浩, 内田寛

    セラミックス基礎科学討論会講演要旨集   52nd   2014

  • Domain structure change with temperature in {100}-oriented PbTiO3 epitaxial film

    Nakashima Takaaki, Ichinose Daichi, Ehara Yoshitaka, Shimizu Takao, Kobayashi Takeshi, Yamada Tomoaki, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   75th   3884 - 3884   2014

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    DOI: 10.11470/jsapmeeting.2014.2.0_3884

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  • Growth of {110} one-axis-oriented perovskite-type oxide films using (101) PdO//(111) Pd buffer layers and their characterization

    Oshima Naoya, Ehara Yoshitaka, Oikawa Takahiro, Tanaka Hiroki, Uchida Hiroshi, Uchiyama Kiyoshi, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   75th   3903 - 3903   2014

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    DOI: 10.11470/jsapmeeting.2014.2.0_3903

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  • Observation of Strain-Induced AFD and FE Phase Transitions in SrTiO3 Thin Films

    Yamada Tomoaki, Eerd Benjamin Wylie-van, Sakata Osami, Tagantsev Alexander, Morioka Hitoshi, Ehara Yoshitaka, Yasui Shintaro, Funakubo Hiroshi, Nagasaki Takanori, Trodahl Joe

    JSAP Annual Meetings Extended Abstracts   61st   1168 - 1168   2014

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    DOI: 10.11470/jsapmeeting.2014.1.0_1168

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  • 面内分極PbTiO3エピタキシャル膜におけるドメイン構造の膜厚依存性

    中島崇明, 江原祥隆, 清水荘雄, 舟窪浩

    セラミックス基礎科学討論会講演要旨集   52nd   2014

  • Evaluation of Oxygen Vacancies in BaTiO3 Single Crystal using Resonant Raman Spectroscopy

    Oka Hirotaka, Funakubo Hiroshi, Moriwake Hiroki, Shima Hiromi, Nishida Ken, Yamamoto Takashi

    JSAP Annual Meetings Extended Abstracts   61st   1177 - 1177   2014

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    DOI: 10.11470/jsapmeeting.2014.1.0_1177

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  • Characterization of piezoelectric property in (100)/(001)-oriented tetragonal Pb(Zr,Ti)O3 films with controlled volume fraction of (001) orientation

    Oshima Naoya, Ehara Yoshitaka, Oikawa Takahiro, Uchida Hiroshi, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   61st   1151 - 1151   2014

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    DOI: 10.11470/jsapmeeting.2014.1.0_1151

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  • Experimental tuning of Curie temperature by epitaxial strain in PbTiO3 film

    Nakashima Takaaki, Ehara Yoshitaka, Shimizu Takao, Kobayashi Takeshi, Funakubo Hiroshi

    JSAP Annual Meetings Extended Abstracts   61st   1165 - 1165   2014

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    DOI: 10.11470/jsapmeeting.2014.1.0_1165

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  • 28aAM-1 Piezoresponse behavior of epitaxial films under ferroelectric-antiferroelectric phase boundary

    Yasui S, Takeuchi Ichiro, Ehara Y, Shiraishi T, Shimizu T, Funakubo H, Imai Y, Tajiri H, Sakata O, Itoh M

    Meeting Abstracts of the Physical Society of Japan   69 ( 0 )   923 - 923   2014

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    Language:Japanese   Publisher:一般社団法人 日本物理学会  

    DOI: 10.11316/jpsgaiyo.69.1.4.0_923_4

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  • Evaluation of β-FeSi<inf>2</inf>/Si-interface using Ag-coating on Si surface

    Kensuke Akiyama, Shunichi Motomura, Gohei Hayashi, Hiroshi Funakubo, Masaru Itakura

    Physica Status Solidi (C) Current Topics in Solid State Physics   10 ( No. 12 )   1684 - 1687   2013.12

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  • Epitaxial growth of (010)-oriented β-FeSi<inf>2</inf>film on Si(110) substrate

    Kensuke Akiyama, Hiroshi Funakubo, Masaru Itakura

    Materials Research Society Symposium Proceedings   1493   189 - 194   2013.11

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  • 1P3-6 Growth of Epitaxial KNbO3 Thin Films by Hydrothermal Method for Ultrasonic Transducers(Poster Session)

    Ozeki Seiya, Hosaki Makoto, Kameyama Daisuke, Ishida Satomi, Shiraishi Takahisa, Funakubo Hiroshi, Kurosawa Minoru, Ishikawa Mutsuo

    Proceedings of Symposium on Ultrasonic Electronics   34   141 - 142   2013.11

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    Language:English   Publisher:Steering committee of symposium on ultrasonic electronics  

    DOI: 10.24492/use.34.0_141

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  • Pb(Zr₀.₃,Ti₀.₇)O₃及びPb(Zr₀.₅₂,Ti₀.₄₈)O₃薄膜を用いた圧電MEMS振動型エネルギーハーベスタ (第5回 集積化MEMSシンポジウム)

    鈴木 靖弘, 牧本 なつみ, 舟窪 浩

    「センサ・マイクロマシンと応用システム」シンポジウム論文集 電気学会センサ・マイクロマシン部門 [編]   30   1 - 6   2013.11

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  • Orientation Dependencies of Dielectric Properties of Bismuth Layer Structured Dielectrics and Their Capacitor Application for High Temperature Use Reviewed

    FUNAKUBO Hiroshi, KIMURA Junichi, SHIMIZU Takao, MATSUSHIMA Masaaki, YASUI Shintaro, UCHIDA Hiroshi, YAMADA Tomoaki

    Journal of the Society of Inorganic Materials, Japan : セッコウ・石灰・セメント・地球環境の科学   Vol. 20 ( No. 367 )   403 - 407   2013.11

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  • Strain-Stable Nonlinear Dielectric Responses in Pyrochlore Bismuth Zinc Niobate Thin Films Reviewed

    M.Nakajima, T.Yamada, S.Okaura, H.Funakubo

    Japanese Journal of Applied Physics   52 ( 9 )   09KA13 - 1-5   2013.9

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    DOI: 10.7567/JJAP.52.09KA13

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  • Bi4Ti3O12 Nanowall Growth Driven by Anisotropic Growth Rate and Size Control Reviewed

    T.Yamada, T.Shibata, K.Ishii, J.Kimura, H.Funakubo, M.Yoshino, T.Nagasaki

    Japanese Journal of Applied Physics   52 ( 9 )   09KA09 - 1-4   2013.9

  • 金属基板上における一軸配向性Pb(Zr,Ti)O3薄膜の作製におよぶ界面反応の影響

    峯村 佳輝, 長坂 康平, 金 鎭雄, 西田 謙, 舟窪 浩, 内田 寛

    応用物理学会学術講演会講演予稿集   2013.2   2085 - 2085   2013.8

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    DOI: 10.11470/jsapmeeting.2013.2.0_2085

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  • スパッタ法により合成した高結晶性Mg2Si膜の電気特性

    小川 正太, 片桐 淳生, 松島 正明, 秋山 賢輔, 木村 好里, 内田 寛, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2013.2   3673 - 3673   2013.8

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    DOI: 10.11470/jsapmeeting.2013.2.0_3673

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  • (110)Si基板上への鉄シリサイド薄膜のエピタキシャル成長

    秋山 賢輔, 高橋 亮, 松本 佳久, 本村 俊一, 林 剛平, 舟窪 浩, 板倉 賢

    応用物理学会学術講演会講演予稿集   2013.2   3663 - 3663   2013.8

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    DOI: 10.11470/jsapmeeting.2013.2.0_3663

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  • Wake-up処理電圧が微細加工したMPB,Tetra組成PZT薄膜の圧電特性に与える影響

    牧本 なつみ, 鈴木 靖弘, 前田 龍太郎, 及川 貴弘, 舟窪 浩, 小林 健

    応用物理学会学術講演会講演予稿集   2013.2   2077 - 2077   2013.8

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    DOI: 10.11470/jsapmeeting.2013.2.0_2077

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  • PZT薄膜の最適化による自己検知圧電MEMSカンチレバーの出力電圧向上

    小林 健, 小山 昌二, 牧本 なつみ, 舟窪 浩, 前田 龍太郎

    応用物理学会学術講演会講演予稿集   2013.2   3649 - 3649   2013.8

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    DOI: 10.11470/jsapmeeting.2013.2.0_3649

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  • 異なる面方位を持つSrTiO3基板上に成長したBaTiO3薄膜における相転移

    清水 荘雄, 諏訪間 大, 谷口 博基, 谷山 智康, 舟窪 浩, 伊藤 満

    応用物理学会学術講演会講演予稿集   2013.2   2094 - 2094   2013.8

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    DOI: 10.11470/jsapmeeting.2013.2.0_2094

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  • 種々の温度で水熱合成したKNbO3膜の特徴

    金子 祈之, 白石 貴久, 石河 睦生, 黒澤 実, 内田 寛, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2013.2   2091 - 2091   2013.8

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    DOI: 10.11470/jsapmeeting.2013.2.0_2091

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  • テトラ組成PZT薄膜を用いた振動センサへの電圧印加による影響

    鈴木 靖弘, 牧本 なつみ, 舟窪 浩, 前田 龍太郎, 小林 健

    応用物理学会学術講演会講演予稿集   2013.2   2088 - 2088   2013.8

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    DOI: 10.11470/jsapmeeting.2013.2.0_2088

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  • 化学溶液堆積法によって作製した(111)配向Ba-Biペロブスカイト固溶体薄膜の誘電特性

    木村 純一, 清水 荘雄, 内田 寛, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2013.2   2096 - 2096   2013.8

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    DOI: 10.11470/jsapmeeting.2013.2.0_2096

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  • Influence of Ba/Sr Ratio in Compressively-Strained (Ba,Sr)TiO3(001) Films on the Ferroelectric Phase Transition Reviewed

    T.Yamada, I.Takuwa, T.Kamo, T.Iijima, M.Yoshino, T.Nagasaki, H.Funakubo

    Journal of the Ceramic Society of Japan   121 ( No. 8 )   690-692 - 1277   2013.8

  • 高温使用可能な新規非鉛圧電材料 Reviewed

    安井伸太郎, 黒澤 実, 舟窪 浩, 内田 寛

    超音波 TECHNO   vol. 25 ( No. 4 )   64 - 69   2013.7

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  • Growth of Epitaxial Potassium Niobate Thick Films by Hydrothermal Method and Their Electrical and Ferroelectrical Properties

    ( 28 )   107 - 110   2013.6

  • Identification of the occupation site of Dy- or Y-substituted PZT films and the correlation between occupation site and ferroelectric property

    Ken Nishida, Minoru Osada, Hiroshi Uchida, Hiroshi Nakaki, Hiroshi Funakubo, Hiromi Shima, Masamichi Nishide, Takeshi Tai, Kim Jin Woonhg, Masashi Matsuoka, Takashi Katoda, Takashi Yamamoto

    Integrated Ferroelectrics   141   1 - 8   2013.6

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  • スパッタリング法によるエピタキシャルMg2Si膜の作製

    片桐 淳生, 小川 正太, 松島 正明, 秋山 賢輔, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2013.1   2828 - 2828   2013.3

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    DOI: 10.11470/jsapmeeting.2013.1.0_2828

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  • テトラ組成PZT薄膜を用いた圧電MEMS加速度センサ

    小林 健, 鈴木 靖弘, 牧本 なつみ, 前田 龍太郎, 及川 貴弘, 和田 亜由美, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2013.1   3731 - 3731   2013.3

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    DOI: 10.11470/jsapmeeting.2013.1.0_3731

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  • PLD法を用いたエピタキシャル雲母薄膜の作製条件の検討

    吉田 彬, 山内 涼輔, 譚 ゴオン, 土嶺 信男, 舟窪 浩, 金子 智, 松田 晃史, 吉本 護

    応用物理学会学術講演会講演予稿集   2013.1   1370 - 1370   2013.3

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    DOI: 10.11470/jsapmeeting.2013.1.0_1370

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  • テトラ組成PZT薄膜の配向性、強誘電・圧電特性に高電圧印加が与える影響

    牧本 なつみ, 前田 龍太郎, 及川 貴弘, 和田 亜由美, 舟窪 浩, 小林 健

    応用物理学会学術講演会講演予稿集   2013.1   1140 - 1140   2013.3

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    DOI: 10.11470/jsapmeeting.2013.1.0_1140

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  • マイクロカンチレバー上MPB組成PZT薄膜に対する高電圧印加の影響

    水嵜 英明, 牧本 なつみ, 前田 龍太郎, 及川 貴弘, 和田 亜由美, 舟窪 浩, 小林 健

    応用物理学会学術講演会講演予稿集   2013.1   1142 - 1142   2013.3

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    DOI: 10.11470/jsapmeeting.2013.1.0_1142

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  • 水熱合成(KxNa1-x)NbO3膜の作製と結晶構造評価

    白石 貴久, 金子 祈之, 栄西 弘, 石河 睦生, 黒澤 実, 内田 寛, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2013.1   1151 - 1151   2013.3

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    DOI: 10.11470/jsapmeeting.2013.1.0_1151

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  • 微細加工したMPB組成PZT薄膜の圧電特性に高電圧印加が与える影響

    小林 健, 牧本 なつみ, 前田 龍太郎, 及川 貴弘, 和田 亜由美, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2013.1   1141 - 1141   2013.3

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    DOI: 10.11470/jsapmeeting.2013.1.0_1141

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  • スパッタリング法によるMg2Si膜の作製と評価

    小川 正太, 片桐 淳生, 松島 正明, 秋山 賢輔, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2013.1   2829 - 2829   2013.3

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  • 添加物に基づくビスマス層状構造誘電体薄膜の絶縁性向上

    近藤 陽太, 小川 正太, 木村 純一, 舟窪 浩, 内田 寛

    応用物理学会学術講演会講演予稿集   2013.1   1160 - 1160   2013.3

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    DOI: 10.11470/jsapmeeting.2013.1.0_1160

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  • AgコートしたSi上への高品質鉄シリサイド薄膜の形成

    秋山 賢輔, 高橋 亮, 松本 佳久, 舟窪 浩, 板倉 賢

    応用物理学会学術講演会講演予稿集   2013.1   2819 - 2819   2013.3

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    DOI: 10.11470/jsapmeeting.2013.1.0_2819

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  • Laser Wavelength Effect on Size and Morphology of Silicon Nanoparticles Prepared by Laser Ablation in Liquid

    Pattarin Chewchinda, Takeharu Tsuge, Hiroshi Funakubo, Osamu Odawara, Hiroyuki Wada

    Japanese journal of applied physics : JJAP   52 ( 2 )   25001 - 1-4   2013.2

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    DOI: 10.7567/JJAP.52.025001

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  • PLD法によるBi(Mg1/2Ti1/2)O3基固溶体膜の作製と評価

    及川貴弘, 安井伸太郎, 真鍋直人, 渡邉隆之, 薮田久人, 三浦薫, 小林健, 舟窪浩

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   60th   1158 - 1158   2013

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    DOI: 10.11470/jsapmeeting.2013.1.0_1158

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  • KTaO3及びMgAl2O4基板上に作製した(100)配向PbTiO3エピタキシャル薄膜のドメイン構造

    江原祥隆, 中島崇明, 山田智明, 山田智明, 舟窪浩

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   74th   2084 - 2084   2013

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    DOI: 10.11470/jsapmeeting.2013.2.0_2084

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  • 強誘電体-反強誘電体相境界を有する(Bi,Sm)FeO3エピタキシャル薄膜の電界印加時における圧電挙動の観察

    安井伸太郎, 安井伸太郎, 江原祥隆, 白石貴久, 清水荘雄, 舟窪浩, 伊藤満, 今井康彦, 田尻寛男, 坂田修身, 坂田修身, TAKEUCHI Ichiro

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   74th   2102 - 2102   2013

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    DOI: 10.11470/jsapmeeting.2013.2.0_2102

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  • 正方晶(111)Pb(Zr,Ti)O3薄膜の圧電特性に及ぼすクランピングの影響

    安本洵, 山田智明, 山田智明, 坂田修身, 坂田修身, 今井康彦, 木口賢紀, 今野豊彦, 江原祥隆, 白石貴久, 及川貴弘, 舟窪浩, 吉野正人, 長崎正雅

    日本セラミックス協会年会講演予稿集(CD-ROM)   2013   2013

  • 強誘電体BiFeO3における長寿命伝導キャリアの観測

    中村透, 山田泰裕, 安井伸太郎, 舟窪浩, 金光義彦

    光物性研究会論文集   24th   2013

  • 白色ポンプ・プローブ法によるBiFeO3薄膜の過渡吸収ダイナミクス

    中村透, 山田泰裕, 安井伸太郎, 舟窪浩, 金光義彦

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   60th   1312 - 1312   2013

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    DOI: 10.11470/jsapmeeting.2013.1.0_1312

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  • 1P3-5 Development of small ultrasonic probe using KNbO3 piezoelectric thin films(Poster Session)

    Ishida Satomi, Hosaki Makoto, Kameyama Daisuke, Ozeki Seiya, Shiraishi Takahisa, Funakubo Hiroshi, Kurosawa Minoru, Yamaguchi Tadashi, Ishikawa Mutsuo

    Proceedings of Symposium on Ultrasonic Electronics   34 ( 0 )   139 - 140   2013

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    DOI: 10.24492/use.34.0_139

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  • 水熱合成法の特徴を活かした非鉛圧電体膜の作製と応用 Invited Reviewed

    舟窪浩, 白石貴久

    Ceramic Data Book   41   1XX-118 - 1XX-121   2013

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  • 放射光X線を用いた(111)/(11-1)配向菱面体晶エピタキシャルPb(Zr,Ti)O3膜の電場印加による非分極軸ドメインスイッチングのその場観察

    江原祥隆, 安井伸太郎, 及川貴弘, 白石貴久, 山田智明, 今井康彦, 田尻寛男, 坂田修身, 舟窪浩

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   60th   1133 - 1133   2013

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    DOI: 10.11470/jsapmeeting.2013.1.0_1133

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  • 面内分極軸配向した(100)PbTiO3エピタキシャル薄膜のドメイン構造

    江原祥隆, 山田智明, 山田智明, 舟窪浩

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   60th   1134 - 1134   2013

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    DOI: 10.11470/jsapmeeting.2013.1.0_1134

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  • 強誘電体-反強誘電体相境界を有する(Bi,Sm)FeO3エピタキシャル薄膜の電界印加時における圧電挙動の観察

    安井伸太郎, 安井伸太郎, 江原祥隆, 白石貴久, 清水荘雄, 舟窪浩, 伊藤満, 今井康彦, 田尻寛男, 坂田修身, TAKEUCHI Ichiro

    日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM)   26th   2013

  • 繰り返し電界印加によるMEMS用Pb(Zr,Ti)O3膜の特性評価

    和田亜由美, 江原祥隆, 安井伸太郎, 中島光雅, 及川貴弘, 小林健, 森岡仁, 舟窪浩

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   60th   1139 - 1139   2013

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    DOI: 10.11470/jsapmeeting.2013.1.0_1139

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  • CaTiSiO5基セラミックスの合成と誘電特性評価

    木村純一, 谷口博基, 谷口博基, 清水荘雄, 安井伸太郎, 伊藤満, 舟窪浩

    日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM)   26th   2013

  • 圧電MEMS用Pb(Zr,Ti)O3膜の信頼性評価

    和田亜由美, 江原祥隆, 安井伸太郎, 中島光雅, 及川貴弘, 小林健, 西田謙, 西出正道, 松岡将史, 山本孝, 森岡仁, 舟窪浩

    セラミックス基礎科学討論会講演要旨集   51st   2013

  • 1004 lmprovenient of PZT thin nlms for the applications to the vibration energy harvester

    Suzuki Yasuhiro, Makimoto Natsumi, Hunakubo Hiroshi, Maeda Ryutarou, Kobayashi Takeru

    The Proceedings of Ibaraki District Conference   2013.21   227 - 228   2013

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    We have improved the piezoelectric property of tetragonal composition (Pb(Zr_<0.3>,Ti_<0.7>)O_3) thin films integrated on the MEMS-based energy harvesters by pulse-poling, where AC voltage larger than coercive electric field is applied. The MEMS-based energy harvesters were fabricated from multilayers of Pt/Ti/PZT/Pt/Ti/SiC_2 deposited on silicon-on-insulator (SOI) wafers. We have examined the pulse-poling voltage between 20 to 90V and found that the maximum output voltage and DC output power was obtained at the pulse-poling voltage of 50V. It was found that the pulse-poling is effective in the DC output power rather than AC output power.

    DOI: 10.1299/jsmeibaraki.2013.21.227

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  • c軸単一配向SrBi4Ti4O15,CaBi4Ti4O15薄膜MIMダイオードの電気伝導特性

    田原直也, 河原英彰, 内田寛, 山下馨, 舟窪浩, 野田実

    応用物理学会学術講演会講演予稿集(CD-ROM)   73rd   ROMBUNNO.13P-C10-18 - 1193   2012.8

  • スパッタリング法によるMg2Si膜の配向制御とその評価

    片桐 淳生, 小川 正太, 秋山 賢輔, 松島 正明, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2012.2   2882 - 2882   2012.8

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    DOI: 10.11470/jsapmeeting.2012.2.0_2882

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  • 圧電MEMS上テトラPZT薄膜の圧電特性に電圧印加が与える影響

    小林 健, 牧本 なつみ, 前田 龍太郎, 及川 貴弘, 和田 亜由美, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2012.2   1198 - 1198   2012.8

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    DOI: 10.11470/jsapmeeting.2012.2.0_1198

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  • 「薄膜・表面分科内招待講演」第一原理計算及び現象論による非鉛圧電材料の圧電特性解析

    三浦 薫, 今永 俊治, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2012.2   1173 - 1173   2012.8

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    DOI: 10.11470/jsapmeeting.2012.2.0_1173

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  • MOCVD法で合成したβ-FeSi2薄膜のフォトルミネッセンス発光特性

    秋山 賢輔, 平林 康男, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2012.2   2859 - 2859   2012.8

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    DOI: 10.11470/jsapmeeting.2012.2.0_2859

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  • 様々な降温条件におけるPbTiO3膜中のドメイン形成のその場観察

    松岡 将史, 西出 正道, 田井 丈嗣, 金 鎭雄, 島 宏美, 河東田 隆, 舟窪 浩, 西田 謙, 山本 孝

    応用物理学会学術講演会講演予稿集   2012.2   1207 - 1207   2012.8

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    DOI: 10.11470/jsapmeeting.2012.2.0_1207

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  • ゾルゲル成膜テトラPZT薄膜への電圧印加によるc軸配向性の向上

    牧本 なつみ, 小林 健, 前田 龍太郎, 及川 貴弘, 和田 亜由美, 森岡 仁, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2012.2   1199 - 1199   2012.8

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    DOI: 10.11470/jsapmeeting.2012.2.0_1199

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  • 顕微ラマン分光法を用いたPbTiO3薄膜の歪成分評価

    西出 正道, 松岡 将史, 田井 丈嗣, 金 鎭雄, 河東田 隆, 宇津木 覚, 舟窪 浩, 島 宏美, 西田 謙, 山本 孝

    応用物理学会学術講演会講演予稿集   2012.2   1208 - 1208   2012.8

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    DOI: 10.11470/jsapmeeting.2012.2.0_1208

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  • c軸配向MBi4Ti4O15 (M: Sr, Ca)膜における誘電特性の温度依存性

    木村 純一, 松島 正明, 内田 寛, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2012.2   1204 - 1204   2012.8

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    DOI: 10.11470/jsapmeeting.2012.2.0_1204

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  • 1.54μm luminescence of β-FeSi 2 grown on Au-coated Si substrates

    Kensuke Akiyama, Hiroshi Funakubo, Masaru Itakura

    Materials Research Society Symposium Proceedings   1396   71 - 76   2012.8

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  • Temperature and Frequency Dependencies of Ferroelectric Properties in Rhombohedral Epitaxial Pb(Zr,Ti)O3 Films with Perfect (111) Orientations Grown on CaF2 Substrates Reviewed

    Y.Ehara, T.Yamada, T.Iijima, N.Valanoor, H.Funakubo

    Mater. Res. Soc. Symp. Proc.   1397   mrsf11-1397-p15-02   2012.4

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  • SrBi4Ti4O15/CaBi4Ti4O15BLSD薄膜キャパシタ素子における電気的特性

    田原直也, 野村修平, 内田寛, 山下馨, 舟窪浩, 野田実

    応用物理学関係連合講演会講演予稿集(CD-ROM)   59th   ROMBUNNO.18A-F5-11 - 1296   2012.2

  • スパッタリング法によるMg-Si膜の作製

    片桐 淳生, 松島 正明, 秋山 賢輔, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2012.1   3141 - 3141   2012.2

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    DOI: 10.11470/jsapmeeting.2012.1.0_3141

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  • Au及びCuで表面改質したSi基板上のβ-FeSi2のPL発光

    秋山 賢輔, 平林 康男, 舟窪 浩, 板倉 賢

    応用物理学会学術講演会講演予稿集   2012.1   3150 - 3150   2012.2

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    DOI: 10.11470/jsapmeeting.2012.1.0_3150

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  • 一軸配向Bi(Zn1/2Ti1/2)O3系圧電体薄膜の作製と圧電性評価

    安井伸太郎, 及川貴弘, 長田潤一, 内田寛, 渡邉隆之, 薮田久人, 三浦薫, 黒澤実, 舟窪浩

    応用物理学関係連合講演会講演予稿集(CD-ROM)   59th   1298 - 1298   2012

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    DOI: 10.11470/jsapmeeting.2012.1.0_1298

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  • 放射光X線を用いた(111)/(11-1)配向菱面体晶エピタキシャルPb(Zr,Ti)O3膜の電場印加による非分極軸ドメインスイッチングのその場観察

    江原祥隆, 安井伸太郎, 及川貴弘, 白石貴久, 山田智明, 今井康彦, 田尻寛男, 坂田修身, 舟窪浩

    応用物理学会学術講演会講演予稿集(CD-ROM)   73rd   2012

  • 正方晶およびMPB組成のPZT膜の圧電機構の比較検討

    和田亜由美, 江原祥隆, 安井伸太郎, 中島光雅, 及川貴弘, 白石貴久, 西田謙, 西出正道, 山本孝, 小林健, 森岡仁, 坂田修身, 今井康彦, 山田智明, 山田智明, GRUVERMAN Alexei, 舟窪浩

    エレクトロセラミックス研究討論会講演予稿集   32nd   2012

  • 正方晶および菱面体晶エピタキシャルPb(Zr,Ti)O3膜の圧電特性と強誘電特性

    江原祥隆, 安井伸太郎, 及川貴弘, 舟窪浩, 山田智明, 山田智明

    日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM)   25th   2012

  • 過渡吸収分光による強誘電体BiFeO3の光キャリアダイナミクス

    中村透, 山田泰裕, 安井伸太郎, 舟窪浩, 金光義彦

    光物性研究会論文集   23rd   2012

  • 過渡吸収分光による強誘電体BiFe1-xCoxO3の光キャリアダイナミクス

    中村透, 山田泰裕, 安井伸太郎, 舟窪浩, 金光義彦

    日本物理学会講演概要集   67 ( 2 )   2012

  • 18pPSB-19 Photocarrier dynamics of ferroelectric BiFe_<1-x>Co_xO_3 by transient absorption spectroscopy

    Nakamura T, Yamada Y, Yasui S, Funakubo H, Kanemitsu Y

    Meeting Abstracts of the Physical Society of Japan   67 ( 0 )   685 - 685   2012

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    DOI: 10.11316/jpsgaiyo.67.2.4.0_685_2

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  • ビスマス正方晶強誘電体を用いた組成相境界を有する圧電体膜の探索

    舟窪浩, 安井伸太郎, 長田潤一, 矢澤慶祐, 内田寛

    日本セラミックス協会秋季シンポジウム講演予稿集(CD-ROM)   25th   2012

  • CaF2基板上の作製したエピタキシャルPb(Zr,Ti)O3膜の結晶構造および強誘電特性のZr/(Zr+Ti)比依存性

    江原祥隆, 安井伸太郎, 森岡仁, 山田智明, 舟窪浩

    応用物理学関係連合講演会講演予稿集(CD-ROM)   59th   1282 - 1282   2012

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    DOI: 10.11470/jsapmeeting.2012.1.0_1282

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  • 高圧合成法で作製したBi(Zn1/2Ti1/2)O3-Bi(Mg1/2Ti1/2)O3-BiFeO3系における単斜晶相の特徴

    真鍋直人, 安井伸太郎, 坂口智可, 岡研吾, 東正樹, 舟窪浩

    エレクトロセラミックス研究討論会講演予稿集   32nd   2012

  • TEM analysis of microstructure in epitaxially grown rhombohedral Pb(Zr,Ti)O3 films

    Aoyagi Kenta, Kiguchi Takanori, Konno Toyohiko, Wada Ayumi, Ehara Yoshitaka, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2012   673 - 673   2012

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    DOI: 10.14853/pcersj.2012s.0.673.0

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  • Ferroelectric Property of Polar-axis Oriented Epitaxial Pb(Zr, Ti)O3 Films

    Ehara Yoshitaka, Yasui Shintaro, Oikawa Takashiro, Yamada Tomoaki, Iijima Takashi, Sakata Osami, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2012   797 - 797   2012

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    Spontaneous polarization (Ps) of Pb(Zr, Ti)O3 were investigate using polar-axis oriented tetragonal and rhombohedral epitaxial films. Observed Ps was in good agreement with the thermodynamic prediction reported by Haun et al.

    DOI: 10.11470/jsapmeeting.2011.2.0_797

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  • PLD法を用いたエピタキシャルPb(Zr,Ti)O3ナノロッドの成長過程の観察とその強誘電及び圧電特性

    山田智明, 山田智明, 中村健太郎, 田中秀典, 江原祥隆, 安井伸太郎, 及川貴弘, 坂田修身, 舟窪浩, 吉野正人, 長崎正雅

    応用物理学会学術講演会講演予稿集(CD-ROM)   73rd   1201 - 1201   2012

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    DOI: 10.11470/jsapmeeting.2012.2.0_1201

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  • Incommensurate structure in an epitaxially grown Pb(Zr,Ti)O3 thick film at its morphotropic phase boundary

    Aoyagi Kenta, Kiguchi Takanori, Konno Toyohiko, Wada Ayumi, Ehara Yoshitaka, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2012   672 - 672   2012

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    DOI: 10.14853/pcersj.2012s.0.672.0

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  • PbTiO3薄膜における90°ドメイン底部境界構造の解明

    木口賢紀, 青柳健大, 今野豊彦, 江原祥隆, 舟窪浩

    日本セラミックス協会年会講演予稿集   2012   2012

  • MPB近傍PZT薄膜の90°ドメインと帯電した菱面体晶ドメイン境界

    青柳健大, 木口賢紀, 今野豊彦, 和田亜由美, 江原祥隆, 舟窪浩

    日本セラミックス協会年会講演予稿集   2012   2012

  • 電界印加に伴うPb(Zr,Ti)O3膜の結晶構造変化の解析

    和田亜由美, 江原祥隆, 安井伸太郎, 中島光雅, 和田芽句, 谷口博基, 伊藤満, 岡村総一郎, 西田謙, 山本孝, 小林健, 森岡仁, 舟窪浩

    応用物理学関係連合講演会講演予稿集(CD-ROM)   59th   1283 - 1283   2012

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    DOI: 10.11470/jsapmeeting.2012.1.0_1283

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  • MPB近傍PZT厚膜におけるインコメンシュレート相の発見

    青柳健大, 木口賢紀, 今野豊彦, 和田亜由美, 江原祥隆, 舟窪浩

    日本セラミックス協会年会講演予稿集   2012   2012

  • 水熱合成法の特徴を生かして作製された(KxNa1-x)NbO3膜の特性評価

    白石貴久, 榮西弘, 石河睦生, 石河睦生, 安井伸太郎, 長谷川智仁, 黒澤実, 内田寛, 坂下幸雄, 舟窪浩

    セラミックス基礎科学討論会講演要旨集   50th   2012

  • 化学溶液法による導電性La基ペロブスカイト型酸化物薄膜の作製と評価

    笹嶋慶一, 安井伸太郎, 舟窪浩, 内田寛

    セラミックス基礎科学討論会講演要旨集   50th   2012

  • MOCVD法で作製したBi(Zn1/2Ti1/2)O3基エピタキシャル薄膜の結晶構造と電気特性

    長田潤一, 安井伸太郎, 真鍋直人, 内田寛, 坂田修身, 舟窪浩

    セラミックス基礎科学討論会講演要旨集   50th   2012

  • ナノシート界面層を利用したPb(Zr,Ti)O3薄膜の選択配向成長

    峯村佳輝, 近藤陽太, 安井伸太郎, 舟窪浩, 内田寛

    応用物理学関係連合講演会講演予稿集(CD-ROM)   59th   1281 - 1281   2012

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    DOI: 10.11470/jsapmeeting.2012.1.0_1281

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  • 水熱合成エピタキシャル(K0.5Na0.5)NbO3膜のアニール温度依存

    白石貴久, 石河睦生, 石河睦生, 安井伸太郎, 黒澤実, 内田寛, 平山泰生, 舟窪浩

    応用物理学関係連合講演会講演予稿集(CD-ROM)   59th   1288 - 1288   2012

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    DOI: 10.11470/jsapmeeting.2012.1.0_1288

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  • シリコン基板上に作製したビスマス基圧電体膜の特性評価

    及川貴弘, 安井伸太郎, 真鍋直人, 小林健, 渡邉隆之, 薮田久人, 三浦薫, 舟窪浩

    応用物理学会学術講演会講演予稿集(CD-ROM)   73rd   1184 - 1184   2012

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    DOI: 10.11470/jsapmeeting.2012.2.0_1184

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  • 化学溶液堆積法によるBa-Bi系ペロブスカイト薄膜の作製と特性評価

    金子祈之, 金子祈之, 安井伸太郎, 舟窪浩, 内田寛

    応用物理学会学術講演会講演予稿集(CD-ROM)   73rd   1183 - 1183   2012

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    DOI: 10.11470/jsapmeeting.2012.2.0_1183

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  • 高圧合成法で作製したBi(Zn1/2Ti1/2)O3-Bi(Mg1/2Ti1/2)O3-BiFeO3系における組成による結晶相の変化

    真鍋直人, 安井伸太郎, 長田潤一, 岡研吾, 東正樹, 舟窪浩

    セラミックス基礎科学討論会講演要旨集   50th   2012

  • ペロブスカイト型酸化物テンプレートを用いた(001)高配向性BiFeO3薄膜の選択的成長

    林真里, 安井伸太郎, 舟窪浩, 内田寛

    セラミックス基礎科学討論会講演要旨集   50th   2012

  • PLD法で作製したBi(Mg1/2Ti1/2)O3膜の特性

    及川貴弘, 安井伸太郎, 渡邉隆之, 藪田久人, 福井哲朗, 舟窪浩

    応用物理学関係連合講演会講演予稿集(CD-ROM)   59th   1297 - 1297   2012

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    DOI: 10.11470/jsapmeeting.2012.1.0_1297

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  • Development of bismuth - d0 transition metals based new perovskite-type ferroelectric materials and their electric properties

    Shimamura Atsushi, Fujii Ichiro, Nakashima Kouichi, Wada Satoshi, Kuroiwa Yoshihiro, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2012S   510 - 510   2012

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    DOI: 10.14853/pcersj.2012s.0.510.0

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  • SrBi4Ti4O15/CaBi4Ti4O15薄膜キャパシタの電気的特性

    王洲, 野村修平, 内田寛, 山下馨, 舟窪浩, 野田実

    電気関係学会関西連合大会講演論文集(CD-ROM)   2011   ROMBUNNO.30P4-2   2011.10

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  • ラマン分光法によるスパッタSrRuO3薄膜の構造評価とスパッタダメージが特性に及ぼす影響

    田井 丈嗣, 宮崎 亘, 大住 剛, 金 鎭雄, 西出 正道, 加茂 嵩史, 舟窪 浩, 島 宏美, 西田 謙, 山本 孝

    応用物理学会学術講演会講演予稿集   2011.2   948 - 948   2011.8

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    DOI: 10.11470/jsapmeeting.2011.2.0_948

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  • 半絶縁性4H-SiC基板上β-FeSi2薄膜の電気伝導特性

    秋山 賢輔, 金子 智, 小沢 武, 舟窪 浩, 平林 康男

    応用物理学会学術講演会講演予稿集   2011.2   2474 - 2474   2011.8

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    DOI: 10.11470/jsapmeeting.2011.2.0_2474

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  • MgO Prepared on Si(001) Substrate: Epitaxial Film & Nano Cube

    JSAP Annual Meetings Extended Abstracts   2011.2   1000 - 1000   2011.8

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    DOI: 10.11470/jsapmeeting.2011.2.0_1000

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  • AFMを用いたPZT膜の縦方向および横方向変位測定

    飯島 高志, 柏木 悠太, 岡村 総一郎, 相蘇 亨, 舟窪 浩, 島 宏美, 西田 謙, 山本 孝

    応用物理学会学術講演会講演予稿集   2011.2   800 - 800   2011.8

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    DOI: 10.11470/jsapmeeting.2011.2.0_800

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  • Investigation of SrBi4Ti4O15/CaBi 4Ti4O15 thin film capacitor for excellent electric stability

    Shuhei Nomura, Syu Ou, Kaoru Yamashita, Minoru Noda, Hiroshi Uchida, Hiroshi Funakubo

    IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai   108 - 109   2011.8

  • Configuration and Local Elastic Interaction of Ferroelectric Domains and Misfit Dislocation in PbTiO3/SrTiO3 Epitaxial Thin Films Reviewed International journal

    T.Kiguchi, K.Aoyagi, Y.Ehara, H.Funakubo, T.Yamada, N.Usami, T.J.Konno

    Science and Technology of Advanced Materials   12 ( 3 )   034413-1-9 - 034413   2011.6

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    We have studied the strain field around the 90° domains and misfit dislocations in PbTiO3/SrTiO3 (001) epitaxial thin films, at the nanoscale, using the geometric phase analysis (GPA) combined with high-resolution transmission electron microscopy (HRTEM) and high-angle annular dark field--scanning transmission electron microscopy (HAADF-STEM). The films typically contain a combination of a/c-mixed domains and misfit dislocations. The PbTiO3 layer was composed from the two types of the a-domain (90° domain): a typical a/c-mixed domain configuration where a-domains are 20-30 nm wide and nano sized domains with a width of about 3 nm. In the latter case, the nano sized a-domain does not contact the film/substrate interface; it remains far from the interface and stems from the misfit dislocation. Strain maps obtained from the GPA of HRTEM images show the elastic interaction between the a-domain and the dislocations. The normal strain field and lattice rotation match each other between them. Strain maps reveal that the a-domain nucleation takes place at the misfit dislocation. The lattice rotation around the misfit dislocation triggers the nucleation of the a-domain; the normal strains around the misfit dislocation relax the residual strain in a-domain; then, the a-domain growth takes place, accompanying the introduction of the additional dislocation perpendicular to the misfit dislocation and the dissociation of the dislocations into two pairs of partial dislocations with an APB, which is the bottom boundary of the a-domain. The novel mechanism of the nucleation and growth of 90° domain in PbTiO3/SrTiO3 epitaxial system has been proposed based on above the results.

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  • Structure Determination and Compositional Modification of Body-centered Tetragonal PX-Phase Lead Titanate Reviewed

    J.Wang, K.Schenk, A.Carvalho, B.W.Eerd, J.Trodahl, C.S.Sandu, M.Bonin, I.Gregora, Z.He, T.Yamada, H.Funakubo, P.R.Briddon, N.Setter

    Chemistry of Materials   23   2529-2535   2011.4

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    DOI: 10.1021/cm1030206

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  • SrBi4Ti4O15薄膜キャパシタの電気的特性

    野村修平, 内田寛, 山下馨, 舟窪浩, 野田実

    応用物理学関係連合講演会講演予稿集(CD-ROM)   58th   ROMBUNNO.24A-BE-15 - 1306   2011.3

  • シリコン基板上に成長した短い格子定数の酸化マグネシウム

    金子 智, 伊藤 健, 秋山 賢輔, 曽我 雅康, 本泉 佑, 安井 学, 平林 康男, 永野 隆敏, 舟窪 浩, 吉本 護

    応用物理学会学術講演会講演予稿集   2011.1   1519 - 1519   2011.3

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    DOI: 10.11470/jsapmeeting.2011.1.0_1519

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  • 反応性スパッタ法を用いたBaTiO3薄膜の作製及び評価

    大住 剛, 西出 正道, 舟窪 浩, 西田 謙, 山本 孝

    応用物理学会学術講演会講演予稿集   2011.1   1337 - 1337   2011.3

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    DOI: 10.11470/jsapmeeting.2011.1.0_1337

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  • Improvement of coercive voltage and fatigue endurance in Mn-doped BiFeO3 capacitors using Pt/SrRuO3 top electrode

    JSAP Annual Meetings Extended Abstracts   2011.1   1294 - 1294   2011.3

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    DOI: 10.11470/jsapmeeting.2011.1.0_1294

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  • 水熱合成法による(K, Na)NbO3厚膜の金属板上での配向制御とその特性評価

    白石 貴久, 榮西 弘, 石河 睦生, 長谷川 智仁, 黒澤 実, 内田 寛, 坂下 幸雄, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2011.1   1329 - 1329   2011.3

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    DOI: 10.11470/jsapmeeting.2011.1.0_1329

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  • 酸化物ナノシートを利用した層状ペロブスカイト型酸化物薄膜の選択配向成長

    内田 寛, 近藤 陽太, 木村 純一, 多久和 至, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2011.1   1307 - 1307   2011.3

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    DOI: 10.11470/jsapmeeting.2011.1.0_1307

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  • バッファ層を用いてc軸一軸配向させたビスマス層状構造誘電体の高温電気特性

    木村 純一, 多久和 至, 松島 正明, 山田 智明, 内田 寛, 柴田 竜雄, 長田 実, 佐々木 高義, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2011.1   1305 - 1305   2011.3

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    DOI: 10.11470/jsapmeeting.2011.1.0_1305

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  • ペロブスカイト界面層を利用したBiFeO3薄膜の選択配向成長

    林真里, 笹嶋慶一, 峯村佳輝, 安井伸太郎, 舟窪浩, 内田寛

    応用物理学会学術講演会講演予稿集(CD-ROM)   72nd   761 - 761   2011

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    DOI: 10.11470/jsapmeeting.2011.2.0_761

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  • 分極軸配向エピタキシャルPb(Zr,Ti)O3膜の強誘電特性

    江原祥隆, 安井伸太郎, 中島光雅, 山田智明, 山田智明, 飯島高志, 舟窪浩

    応用物理学会学術講演会講演予稿集(CD-ROM)   72nd   2011

  • Nucleation and growth mechanism of 90 degree domain by elastic interaction with misfit dislocation in PbTiO3

    Kiguchi Takanori, Aoyagi Kenta, Ehara Yoshitaka, Funakubo Hiroshi, Yamada Tomoaki, Usami Noritaka, konno Toyohiko J.

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   24th   785 - 785   2011

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    The atomic-resolution TEM and STEM analysis of the structure around 90 degree domains and misfit dislocations of PbTiO3/SrTiO3 epitaxilal film was conducted. The nucleation and growth of a 90 degree domain was generated by a wedge disclination and its dissociation into a pair of partial disclinations with an anti-phase boundary.

    DOI: 10.14853/pcersj.2011f.0.785.0

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  • PbTiO3薄膜の90°ドメイン境界の構造とミスフィット転位との弾性相互作用

    木口賢紀, 青柳健大, 江原祥隆, 舟窪浩, 山田智明, 山田智明, 宇佐美徳隆, 今野豊彦

    エレクトロセラミックス研究討論会講演予稿集   31st   2011

  • PbTiO3厚膜における格子欠陥のTEM解析

    青柳健大, 木口賢紀, 今野豊彦, 江原祥隆, 舟窪浩

    エレクトロセラミックス研究討論会講演予稿集   31st   2011

  • Microstructure analysis of PbTiO3 thick film with stacking faults

    Aoyagi Kenta, Kodama Yumiko, Kiguchi Takanori, Usami Noritaka, Konno Toyohiko, Ehara Yoshitaka, Funakubo Hiroshi, Yamada Tomoaki

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   24th   387 - 387   2011

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    DOI: 10.14853/pcersj.2011f.0.387.0

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  • Strain relazation by the formation of stacking faults in PbTiO3 films

    Aoyagi Kenta, Kodama Yumiko, Kiguchi Takanori, Usami Noritaka, Konno Toyohiko, Ehara Yoshitaka, Funakubo Hiroshi, Yamada Tomoaki

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2011   482 - 482   2011

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    DOI: 10.14853/pcersj.2011s.0.482.0

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  • Uniaxial crystal growth of LaNiO3 film by chemical solution deposition

    SASAJIMA KEIICHI, UCHIDA HIROSHI, YASUI SHINTARO, FUNAKUBO HIROSHI, KIGUCHI TAKANORI

    Preprints of Annual Meeting of The Ceramic Society of Japan<br>Preprints of Fall Meeting of The Ceramic Society of Japan   2011 ( 0 )   310 - 310   2011

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    LaNiO&lt;SUB&gt;3&lt;/SUB&gt; (LNO) 薄膜は強誘電体キャパシタの分極疲労を緩和する電極材料として利用されるほか、近年はキャパシタ層の選択的結晶配向成長を促す界面層としても注目されている。本研究では種々の条件下でLNO薄膜を作製し、その選択的な結晶配向成長のメカニズムについて考察する。硝酸ランタン六水和物、酢酸ニッケル四水和物および2-メトキシエタノールを用いて調製したLNO前駆体溶液を(100)Si, (111)Pt/TiO&lt;SUB&gt;2&lt;/SUB&gt;/(100)SiおよびSiO&lt;SUB&gt;2&lt;/SUB&gt;ガラス基板上にスピンコートし、結晶化の熱処理を施すことで結晶質LNO薄膜を作製した。XRD分析の結果、いずれの基板上においてもLNO(&lt;I&gt;h&lt;/I&gt;00)面が基板面方位に配向している事が確認され、LNOの選択的な結晶配向成長は基板表面との格子整合性に依存しない自発的な結晶成長の現象である事がわかった。

    DOI: 10.14853/pcersj.2011F.0.310.0

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  • 様々な基板上へのハーフメタル酸化物Sr2FeMoO6薄膜の合成と物性

    門田祥悟, 安井伸太郎, 舟窪浩, 松本祐司, 笹川崇男

    応用物理学関係連合講演会講演予稿集(CD-ROM)   58th   1450 - 1450   2011

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    DOI: 10.11470/jsapmeeting.2011.1.0_1450

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  • ハーフメタル酸化物Sr2FeMoO6薄膜における物性の膜厚依存性

    門田祥悟, 安井伸太郎, 舟窪浩, 松本祐司, 笹川崇男

    応用物理学関係連合講演会講演予稿集(CD-ROM)   58th   1451 - 1451   2011

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    DOI: 10.11470/jsapmeeting.2011.1.0_1451

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  • フラックスエピタキシー:C60六角板状結晶の生成とその成長過程

    武山洋子, 丸山伸伍, 安井伸太郎, 舟窪浩, 角谷正友, 谷口博基, 伊藤満, 上野啓司, 松本祐司

    応用物理学会学術講演会講演予稿集(CD-ROM)   72nd   1775 - 1775   2011

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    DOI: 10.11470/jsapmeeting.2011.2.0_1775

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  • PLD法によるBi(Mg1/2Ti1/2)O3薄膜の作製と評価

    及川貴弘, 安井伸太郎, 舟窪浩, 渡邉隆之, 薮田久人, 福井哲朗

    エレクトロセラミックス研究討論会講演予稿集   31st   2011

  • ペロブスカイト型酸化物界面層を利用したBiFeO3-Bi(Zn1/2Ti1/2)O3固溶体薄膜の作製

    林真里, 安井伸太郎, 舟窪浩, 内田寛

    エレクトロセラミックス研究討論会講演予稿集   31st   2011

  • Pb系強誘電体薄膜における極性構造の原子分解能観察

    木口賢紀, 青柳健大, 中村崇昭, 宇佐美徳隆, 今野豊彦, 江原祥隆, 舟窪浩, 山田智明, 山田智明

    日本セラミックス協会年会講演予稿集   2011   2011

  • Crystal Structure and Ferroelectric property of Epitaxial Rhombohedral Pb(Zr,Ti)O3 Films

    EHARA YOSHITAKA, UTSUGI SATORU, NAKAJIMA MITSUMASA, YAMADA TOMOAKI, FUNAKUBO HIROSHI, IIJIMA TAKASHI

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2011   303 - 303   2011

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    (111)/(11-1)-oriented rhombehodral Pb(Zr,Ti)O3 (PZT) films were epitaxially grown on SrRuO3-covered (100)KTaO3, (100)SrTiO3, and (100)CaF2 substrates by metal organic chemical vapor deposition. The volume fraction of the (111)-orientation almost linearly increased with the increase of the thermal strain during the cooling process from the deposition temperature to the Curie temperature. Consequently, perfectly (111)-oriented, (i.e., polar-axis-oriention) rhombohedral PZT films were obtained on (100)CaF2 substrates.

    DOI: 10.14853/pcersj.2011s.0.303.0

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  • PbTiO3膜における90°ドメイン境界近傍の無積層欠陥帯

    青柳健大, 兒玉裕美子, 木口賢紀, 今野豊彦, 江原祥隆, 舟窪浩, 山田智明, 山田智明

    日本セラミックス協会年会講演予稿集   2011   2011

  • エピタキシャルPbTiO3薄膜の圧電応答マッピング像

    安井伸太郎, 江原祥隆, 舟窪浩

    日本セラミックス協会年会講演予稿集   2011   2011

  • ミスフィット転位上への強誘電体90°ドメインの核生成

    木口賢紀, 青柳健大, 今野豊彦, 江原祥隆, 舟窪浩, 山田智明

    日本セラミックス協会年会講演予稿集   2011   2011

  • エピタキシャルBi(Zn1/2Ti1/2)O3-Bi(Mg1/2Ti1/2)O3-BiFeO3薄膜の作製と評価

    長田潤一, 安井伸太郎, 山田智明, 内田寛, 東正樹, 東正樹, 薮田久人, 渡邉隆之, 三浦薫, 舟窪浩

    応用物理学関係連合講演会講演予稿集(CD-ROM)   58th   1302 - 1302   2011

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    DOI: 10.11470/jsapmeeting.2011.1.0_1302

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  • 水熱合成法を用いたエピタキシャル(K,Na)NbO3厚膜の合成

    榮西弘, 白石貴久, 安井伸太郎, 石河睦生, 黒澤実, 内田寛, 坂下幸雄, 舟窪浩

    応用物理学関係連合講演会講演予稿集(CD-ROM)   58th   1330 - 1330   2011

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    DOI: 10.11470/jsapmeeting.2011.1.0_1330

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  • 新規圧電体における巨大圧電性を設計するための指針

    安井伸太郎, 長田潤一, 山田智明, 内田寛, 東正樹, 東正樹, 舟窪浩

    応用物理学関係連合講演会講演予稿集(CD-ROM)   58th   1303 - 1303   2011

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    DOI: 10.11470/jsapmeeting.2011.1.0_1303

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  • 水熱合成法によるエピタキシャル(KxNa1-x)NbO3膜の組成依存性

    白石貴久, 榮西弘, 石河睦生, 石河睦生, 安井伸太郎, 長谷川智仁, 黒澤実, 内田寛, 坂下幸雄, 舟窪浩

    応用物理学会学術講演会講演予稿集(CD-ROM)   72nd   807 - 807   2011

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    DOI: 10.11470/jsapmeeting.2011.2.0_807

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  • 新規正方晶Biペロブスカイト圧電体薄膜の作製と評価

    長田潤一, 安井伸太郎, 内田寛, 舟窪浩

    応用物理学会学術講演会講演予稿集(CD-ROM)   72nd   803 - 803   2011

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    DOI: 10.11470/jsapmeeting.2011.2.0_803

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  • 化学溶液法により作製したLaNiO3薄膜の一軸結晶配向成長

    笹嶋慶一, 内田寛, 安井伸太郎, 舟窪浩, 木口賢紀

    日本セラミックス協会秋季シンポジウム講演予稿集   24th   2011

  • LaNiO3界面層を利用したBiFeO3薄膜の選択配向成長

    林真里, 安井伸太郎, 舟窪浩, 内田寛

    応用物理学関係連合講演会講演予稿集(CD-ROM)   58th   1300 - 1300   2011

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    DOI: 10.11470/jsapmeeting.2011.1.0_1300

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  • Bi(Zn1/2Ti1/2)O3系圧電体薄膜における圧電性と結晶構造の関係

    安井伸太郎, 長田潤一, 内田寛, 黒澤実, 舟窪浩

    応用物理学会学術講演会講演予稿集(CD-ROM)   72nd   804 - 804   2011

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    DOI: 10.11470/jsapmeeting.2011.2.0_804

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  • Fabrication of one-axis oriented MBi4Ti4O15 films (M= Ca, Sr) using perovskite-type oxide interface layers

    Uchida Hiroshi, Kondoh Youta, Kimura Junichi, Takuwa Itaru, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2011S   476 - 476   2011

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    DOI: 10.14853/pcersj.2011s.0.476.0

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  • Orientation control of bismuth layer-structured dielectric thin film by oxide nanosheet

    KONDOH Yohta, UCHIDA Hiroshi, KIMURA Junichi, TAKUWA Itaru, FUNAKUBO Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2011F   684 - 684   2011

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    DOI: 10.14853/pcersj.2011f.0.684.0

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  • Preparation and dielectric properties of Ba(Cu1/3,Ta2/3)O3-Sr(Cu1/3,Ta2/3)O3 solid solution ceramics

    Lee Bong Yeon, Iijima Takashi, Funakubo Hiroshi, Uchida Hiroshi, Okamura Soichiro

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2011F   288 - 288   2011

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    DOI: 10.14853/pcersj.2011f.0.288.0

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  • Atomic-resolution analysis of polar structure of PbTiO3 thin film

    Kiguchi Takanori, Aoyagi Kenta, Nakamura Takaaki, Ehara Yoshitaka, Funakubo Hiroshi, Yamada Tomoaki, Usami Noritaka, Konno Toyohiko J.

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2011S   483 - 483   2011

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    The atomic-resolution TEM analysis of the structure and the polarity of 90˚ domain of PbTiO3/SrTiO3 epitaxilal film was conducted. The domain wall has finite thickness about 1.5nm. In the wall, the lattice is strained and has lower symmetry than tetragonal phase, however, the polarization has the almost same orientation as the inside of the domain. The polarization rotation takes place just at the center of the wall through only one atomic layer.

    DOI: 10.14853/pcersj.2011s.0.483.0

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  • Bottom-up approaches to designing growth and dielectric properties of perovskite thin films

    Yamada Tomoaki, Takuwa Itaru, Kamo Takafumi, Iijima Takashi, Nava Setter, Funakubo Hiroshi, Nagasaki Takanori

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2011S   217 - 217   2011

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    DOI: 10.14853/pcersj.2011s.0.217.0

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  • Biotite Thin Film Synthesis by PLD method

    Nakasone Yuta, Yamauchi Ryosuke, Nakai Hirokazu, Hunakubo Hiroshi, Miyake Yumiko, Tsuchimine Nobuo, Kobayashi Susumu, Sano Yoshihumi, Yoshimoto Mamoru

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2011S   447 - 447   2011

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    DOI: 10.14853/pcersj.2011s.0.447.0

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  • Epitaxial Growth and Piezoelectric Response of Vertically-arrayed Pb(Zr,Ti)O3 Nanorods on Substrates

    Yamada Tomoaki, Tanaka Hidenori, Funakubo Hiroshi, Kodama Yumiko, Kiguchi Takanori, Konno Toyohiko, Yoshino Masahito, Nagasaki Takanori

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2011F   845 - 845   2011

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    DOI: 10.14853/pcersj.2011f.0.845.0

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  • Low temperature fabrication of crystalized BaTiO3 layer by AC magnetic field induction heating

    MATSUSHIITA NOBUHIRO, TATEMICHI SATOSHI, KATSUMATA KEN-ICHI, HUNAKUBO HIROSHI, YAMADA TOMOAKI, OKADA KIYOSHI

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2011F   400 - 400   2011

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    DOI: 10.14853/pcersj.2011f.0.400.0

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  • シリコン基板上に成長した酸素欠損MgO薄膜

    金子 智, 永野 隆敏, 秋山 賢輔, 伊藤 健, 安井 学, 曽我 雅康, 平林 康男, 舟窪 浩, 吉本 護

    応用物理学会学術講演会講演予稿集   2010.2   1115 - 1115   2010.8

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    DOI: 10.11470/jsapmeeting.2010.2.0_1115

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  • Comparison of Pt, SrRuO3, and Pt/SrRuO3 top electrodes in rf-sputtered Mn-doped BiFeO3 capacitors

    JSAP Annual Meetings Extended Abstracts   2010.2   1018 - 1018   2010.8

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    DOI: 10.11470/jsapmeeting.2010.2.0_1018

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  • チタン酸ジルコン酸鉛厚膜の結晶構造の面内サイズ依存性

    西出 正道, 田井 丈詞, 河東田 隆, 横山 信太郎, 舟窪 浩, 西田 謙, 山本 孝

    応用物理学会学術講演会講演予稿集   2010.2   1038 - 1038   2010.8

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    DOI: 10.11470/jsapmeeting.2010.2.0_1038

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  • C軸配向ビスマス層状構造誘電体薄膜の高温用キャパシタ特性の検討

    多久和 至, 木村 純一, 水谷 佑樹, 山田 智明, 内田 寛, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2010.2   1021 - 1021   2010.8

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    DOI: 10.11470/jsapmeeting.2010.2.0_1021

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  • Large constriction of lattice constant in epitaxial magnesium oxide thin film: Effect of point defects on lattice constant

    Satoru Kaneko, Takatoshi Nagano, Kensuke Akiyama, Takeshi Ito, Manabu Yasui, Yasuo Hirabayashi, Hiroshi Funakubo, Mamoru Yoshimoto

    JOURNAL OF APPLIED PHYSICS   107 ( 7 )   073523-1-3   2010.4

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  • PLD法で作製したBaTiO3-Bi(Mg0.5Ti0.5)O0.5エピタキシャル薄膜の結晶構造と電気特性評価

    田中 秀典, 山田 智明, 安井 伸太郎, 大和 慶祐, 柏木 悠太, 岡村 総一郎, 内田 寛, 和田 智志, 飯島 高志, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2010.1   1192 - 1192   2010.3

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    DOI: 10.11470/jsapmeeting.2010.1.0_1192

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  • CVD用新規チタン錯体Ti-DOTの成膜特性

    摩庭 篤, 千葉 洋一, 岩永 宏平, 山本 俊樹, 肆矢 忠寛, 大島 憲昭, 多田 賢一, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2010.1   2846 - 2846   2010.3

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    DOI: 10.11470/jsapmeeting.2010.1.0_2846

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  • シリコン基板上に成長した短い格子定数のMgO薄膜

    金子 智, 永野 隆敏, 秋山 賢輔, 伊藤 健, 安井 学, 曽我 雅康, 平林 康男, 舟窪 浩, 吉本 護

    応用物理学会学術講演会講演予稿集   2010.1   1348 - 1348   2010.3

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    DOI: 10.11470/jsapmeeting.2010.1.0_1348

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  • Pt,LaNiO3,SrRuO3を電極として用いたCrドープBiFeO3薄膜の強誘電性、絶縁性の評価

    古川 晋, 金 正恒, 舟窪 浩, 石原 宏

    応用物理学会学術講演会講演予稿集   2010.1   1172 - 1172   2010.3

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    DOI: 10.11470/jsapmeeting.2010.1.0_1172

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  • ラマン分光法を用いたチタン酸鉛膜のドメイン形成過程のその場観察

    西出 正道, 松岡 将史, 田井 丈詞, 西田 謙, 山本 孝, 舟窪 浩, 河東田 隆

    応用物理学会学術講演会講演予稿集   2010.1   1165 - 1165   2010.3

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    DOI: 10.11470/jsapmeeting.2010.1.0_1165

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  • 幾何学的位相解析によるPbTiO3薄膜90ドメインの局所歪み場解析

    木口 賢紀, 今野 豊彦, 青柳 健大, 宇津木 悟, 山田 智明, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2010.1   1214 - 1214   2010.3

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    DOI: 10.11470/jsapmeeting.2010.1.0_1214

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  • PbTiO3のコヒーレントフォノン計測

    小口 寛彬, 高橋 弘史, 中島 光雅, 宇津木 覚, 舟窪 浩, 中村 一隆

    応用物理学会学術講演会講演予稿集   2010.1   1157 - 1157   2010.3

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    DOI: 10.11470/jsapmeeting.2010.1.0_1157

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  • Characteristics of Mn-doped BiFeO3 films formed on bottom LaNiO3/Pt(111) and SrRuO3/Pt(111) electrodes by rf-sputtering

    JSAP Annual Meetings Extended Abstracts   2010.1   1171 - 1171   2010.3

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    DOI: 10.11470/jsapmeeting.2010.1.0_1171

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  • 歪みエピタキシャル(Ba,Sr)TiO3薄膜における誘電特性の配向依存性

    山田 智明, 多久和 至, 加茂 嵩史, 飯島 高志, 舟窪 浩

    応用物理学会学術講演会講演予稿集   2010.1   1189 - 1189   2010.3

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    DOI: 10.11470/jsapmeeting.2010.1.0_1189

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  • Experimental evidence for orientation property of Pb(Zr0.35Ti0.65)O-3 by manipulating polar axis angle using CaF2 substrate

    Satoru Utsugi, Takashi Fujisawa, Yoshitaka Ehara, Tomoaki Yamada, Masaaki Matsushima, Hitoshi Morioka, Hiroshi Funakubo

    APPLIED PHYSICS LETTERS   96 ( 10 )   1029051 - 3   2010.3

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  • 水熱合成法によるKNbO3エピタキシャル膜の作製と特性評価 Reviewed

    石河睦生, 矢澤慶祐, 藤澤隆志, 安井伸太郎, 長谷川智仁, 黒澤実, 舟窪浩, 森田剛

    超音波 TECHNO   vol. 22 ( no. 3 )   87 - 91   2010.3

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  • Electronic and structural properties of BaTiO3: A proposal about the role of Ti 3s and 3p states for ferroelectricity

    Kaoru Miura, Tatsuo Furuta, Hiroshi Funakubo

    SOLID STATE COMMUNICATIONS   150 ( 3-4 )   205 - 208   2010.1

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  • Electronic and structural properties of ABO3: Role of the B-O coulomb repulsions for ferroelectricity Reviewed International journal

    Miura, K., Masaki Azuma, HIROSHI FUNAKUBO

    Materials   Vol. 4 ( No. 1 )   260 - 273   2010

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  • 菱面体晶Pb(Zr,Ti)O3エピタキシャル膜の結晶構造と強誘電特性

    江原祥隆, 宇津木覚, 中島光雅, 山田智明, 飯島高志, 舟窪浩

    応用物理学会学術講演会講演予稿集(CD-ROM)   71st   1047 - 1047   2010

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    DOI: 10.11470/jsapmeeting.2010.2.0_1047

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  • Influence of Epitaxial Growth Orientation on Residual Strain and Dielectric Properties of (Ba0.3Sr0.7)TiO3 Films Grown on In-plane Compressive Substrates Reviewed

    T.Yamada, T.Kamo, D.Su, T.Iijima, H.Funakubo

    Ferroelectrics   405   262   2010

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  • Comparison of BST Film Microwave Tunable Devices based on (100) and (111) MgO Substrates Reviewed

    M.Noda, T.Yamada, K.Seki, T.Kamo, K.Yamashita, H.Funakubo, M.Okuyama

    IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control   57 ( 10 )   2221 - 2227   2010

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  • Fabrication of highly-(001)-oriented BiFeO3 films on silicon substrat

    Hayashi Mari, Uchida Hiroshi, Yasui Shintaro, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br>Preprints of Fall Meeting of The Ceramic Society of Japan   2010 ( 0 )   3B09 - 3B09   2010

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    本研究ではビスマスフェライトBiFeO&lt;sub&gt;3&lt;/sub&gt;(BFO)薄膜を広く半導体デバイスへと応用するためにSi基板上での材料合成を念頭に置き、一軸配向性LaNiO&lt;sub&gt;3&lt;/sub&gt;(LNO)層を核形成層として利用した選択的結晶成長によりSi基板上での薄膜材料の結晶性向上と結晶配向性制御をを試みた。薄膜試料は化学溶液法により(111)Pt/TiO&lt;sub&gt;2&lt;/sub&gt;/(100)Siおよび(100)LNO/(111)Pt/TiO&lt;sub&gt;2&lt;/sub&gt;/(100)Si基板上に合成された。(100)LNO上に作製した薄膜試料では基板面方位に対して(001)BFOの結晶格子面が選択的に一軸配向成長した。これは配向成長したLNO層の結晶上にBFO結晶が良好な整合性を維持しつつ成長した結果であると推察される。

    DOI: 10.14853/pcersj.2010S.0.3B09.0

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  • Growth of Tetragonal Ferroelectric Films with More Than 3 Times Larger Tetragonal Distortion Than PbTiO3.

    Funakubo Hiroshi, Yamada Tomoaki, Yamamoto Takahisa, Ikuhara Yuichi, Yazawa Keisuke, Yasui Shintaro, Matsushima Masaaki, Uchida Hiroshi, Iijima Takashi, Wang Junling, Lu You, Morioka Hitoshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br>Preprints of Fall Meeting of The Ceramic Society of Japan   2010 ( 0 )   3A24 - 3A24   2010

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    正方晶強誘電体は、最も基本的な強誘電体材料であるが、近年、高圧合成法を中心に、良く知られている正方晶PbTiO3と比較して、3倍以上の大きな正方晶歪 [c軸とa軸の格子定数をaとcとした場合のc/a-1]を有する非鉛物質がいくつか発見されている。これらの物質は、大きな強誘電性と共に、これを端成分にしたMPBの発見が期待されている。我々は、大きな正方晶が報告されているBi(Zn1/2Ti1/2)O3について、BiFeO3との固溶体を作製することで、単体のBi(Zn1/2Ti1/2)O3より大きな正方晶性を得ることを試みた。これは、正方晶を有するBaTiO3およびPbTiO3については、BiFeO3を固溶することによって、より大きな正方晶性が報告されているからである。結果として、大きなc/aと室温での分極反転が確認された

    DOI: 10.14853/pcersj.2010S.0.3A24.0

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  • (La0.07Sr0.93)SnO3透明電極を用いたCaF2基板上Pb(Zr,Ti)O3膜のエピタキシャル成長と分極軸制御

    宇津木覚, 山田智明, 江原祥隆, 田中秀典, 内田寛, 舟窪浩

    応用物理学会学術講演会講演予稿集(CD-ROM)   71st   1046 - 1046   2010

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    DOI: 10.11470/jsapmeeting.2010.2.0_1046

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  • 90°ドメインウォール密度の制御による(100)/(001)配向PZTエピタキシャル膜の圧電特性向上

    中島光雅, 中木寛, 江原祥隆, 山田智明, 森岡仁, 森岡仁, 舟窪浩

    応用物理学会学術講演会講演予稿集(CD-ROM)   71st   1006 - 1006   2010

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    DOI: 10.11470/jsapmeeting.2010.2.0_1006

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  • In-situ Lattice-Strain Analysis of a Ferroelectric Thin Film under an Applied Pulse Electric Field Reviewed

    O.Sakata, S.Yasui, T.Yamada, M.Yabashi, S.Kimura, H.Funakubo

    AIP Conference Proceedings   1234   151   2010

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  • Determination Factors of Strain-relaxed Complex Domain Structure Observed in Thick Epitaxial Pb(Zr, Ti)O3 Films Reviewed

    H.Nakaki, S.Utsugi, T.Fujisawa, M.Nakajima, Y.Ehara, T.Yamada, H.Morioka, T.Ifuku, H.Funakubo

    Mater. Res. Soc. Symp. Proc.   1199   1199-F08-08   2010

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  • Investigation of Oxygen vacancies in Micro-patterned PZT Thin Films using Raman spectroscopy

    Ken Nishida, Minoru Sada, Shintaro Yokoyama, Takafumi Kamo, Takashi Fujisawa, Keisuke Saito, Hiroshi Funakubo, Takashi Katoda, Takashi Yamamoto

    ASIAN CERAMIC SCIENCE FOR ELECTRONICS III AND ELECTROCERAMICS IN JAPAN XII   421-422   135 - +   2010

  • エピタキシャルBi(M1/2Ti1/2)O3-BiFeO3薄膜(M=Zn,Mg)の強誘電性評価(I)

    長田潤一, 安井伸太郎, 山田智明, 内田寛, 薮田久人, 渡邉隆之, 三浦薫, 舟窪浩

    応用物理学会学術講演会講演予稿集(CD-ROM)   71st   1010 - 1010   2010

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    DOI: 10.11470/jsapmeeting.2010.2.0_1010

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  • エピタキシャルBi(M1/2Ti1/2)O3-BiFeO3薄膜(M=Zn,Mg)の強誘電性評価(II)

    安井伸太郎, 長田潤一, 山田智明, 内田寛, 薮田久人, 渡邉隆之, 三浦薫, 舟窪浩

    応用物理学会学術講演会講演予稿集(CD-ROM)   71st   1011 - 1011   2010

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    DOI: 10.11470/jsapmeeting.2010.2.0_1011

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  • PLD法で作製したBaTiO3-Bi(Mg0.5Ti0.5)O3エピタキシャル薄膜の結晶構造と電気特性評価

    田中秀典, 山田智明, 安井伸太郎, 大和慶祐, 柏木悠太, 柏木悠太, 岡村総一郎, 内田寛, 飯島高志, 和田智志, 舟窪浩

    応用物理学関係連合講演会講演予稿集(CD-ROM)   57th   2010

  • PLD法を用いたエピタキシャルPb(Zr,Ti)O3ナノロッド作製の検討

    田中秀典, 山田智明, 安井伸太郎, 山本孝, 西田謙, 飯島高志, 篠崎和夫, 舟窪浩

    応用物理学会学術講演会講演予稿集(CD-ROM)   71st   1039 - 1039   2010

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    DOI: 10.11470/jsapmeeting.2010.2.0_1039

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  • Bi(Mg0.5,Ti0.5)O3添加によるBaTiO3エピタキシャル膜のTc制御

    田中秀典, 山田智明, 安井伸太郎, 大和慶祐, 和田智志, 内田寛, 舟窪浩

    セラミックス基礎科学討論会講演要旨集   48th   2010

  • エピタキシャルBi(Zn1/2Ti1/2)O3-BiFeO3系薄膜の正方晶性制御

    安井伸太郎, 矢澤慶祐, 山田智明, 森岡仁, 森岡仁, 内田寛, 舟窪浩

    応用物理学関係連合講演会講演予稿集(CD-ROM)   57th   1179 - 1179   2010

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    DOI: 10.11470/jsapmeeting.2010.1.0_1179

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  • 水熱合成法を用いたエピタキシャルKNbO3薄膜の方位制御

    榮西弘, 石河睦生, 中島光雅, 安井伸太郎, 山田智明, 黒澤実, 舟窪浩

    応用物理学関係連合講演会講演予稿集(CD-ROM)   57th   1188 - 1188   2010

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    DOI: 10.11470/jsapmeeting.2010.1.0_1188

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  • 分極軸単一配向した歪みの少ないエピタキシャル正方晶Pb(Zr,Ti)O3厚膜を用いたソフトモードによる強誘電性の見積もり

    江原祥隆, 宇津木覚, 中島光雅, 山田智明, 飯島高志, 舟窪浩

    応用物理学関係連合講演会講演予稿集(CD-ROM)   57th   1156 - 1156   2010

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    DOI: 10.11470/jsapmeeting.2010.1.0_1156

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  • CaF2基板上の作製した菱面体組成エピタキシャルPb(Zr,Ti)O3膜の結晶構造および強誘電特性

    江原祥隆, 宇津木覚, 中島光雅, 森岡仁, 森岡仁, 山田智明, 舟窪浩

    応用物理学関係連合講演会講演予稿集(CD-ROM)   57th   1185 - 1185   2010

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    DOI: 10.11470/jsapmeeting.2010.1.0_1185

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  • Effect of incubation time on deposition behavior of Ruthenium films by MOCVD using (2,4-Dimethylpentadienyl)(ethylcyclopentadienyl)Ruthenium

    Masaki Hirano, Kazuhisa Kawano, Hiroshi Funakubo

    ASIAN CERAMIC SCIENCE FOR ELECTRONICS III AND ELECTROCERAMICS IN JAPAN XII   421-422   87 - 90   2010

  • Self-assembled ferroelectric-dielectric nanocomposite films for tunable applications

    T. Yamada, C. S. Sandu, M. Gureev, A. K. Tagantsev, P. Muralt, H. Funakubo, N. Setter

    FUNDAMENTALS AND TECHNOLOGY OF MULTIFUNCTIONAL OXIDE THIN FILMS (SYMPOSIUM G, EMRS 2009 SPRING MEETING)   8   012010-1-7   2010

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  • Experimental evidence for orientation property of Pb(Zr0.35Ti0.65) O3 by manipulating polar axis angle using CaF2 substrate

    Satoru Utsugi, Takashi Fujisawa, Yoshitaka Ehara, Tomoaki Yamada, Masaaki Matsushima, Hitoshi Morioka, Hiroshi Funakubo

    Appl. Phys. Lett.   96   1029051 - 3   2010

  • Dielectric Properties of Highly (001)-plane Oriented SrBi4Ti4O15 Thin Films

    Yuki Mizutani, Hiroshi Uchida, Hiroshi Funakubo, Seiichiro Koda

    Key Eng. Mater.   445   131 - 134   2010

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  • Large constriction of lattice constant in epitaxial magnesium oxide thin film: Effect of point defects on lattice constant

    Satoru Kaneko, Takatoshi Nagano, Kensuke Akiyama, Takeshi Ito, Manabu Yasui, Yasuo Hirabayashi, Hiroshi Funakubo

    J. Appl.Phys.   107   073523-1-3   2010

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    DOI: 10.1063/1.3361482

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  • Investigation of Oxygen vacancies in Micro-patterned PZT Thin Films using Raman spectroscopy

    Ken Nishida, Minoru Osada, Shintaro Yokoyama, Takafumi Kamo, Takashi Fujisawa, Keisuke Saito, Hiroshi Funakubo, Takashi Katoda, Takashi Yamamoto

    Key Engineering Materials   421-422   135 - 138   2010

  • Dielectric Properties of Highly (001)-plane Oriented SrBi4Ti4O15 Thin Films

    Yuki Mizutani, Hiroshi Uchida, Hiroshi Funakubo, Seiichiro Koda

    ELECTROCERAMICS IN JAPAN XIII   445   131 - +   2010

  • Polarized Raman study for epitaxial PZT thick film with the mixture orientation of(100)/(001) Reviewed

    舟窪 浩

    Key Eng.Mater. 421-422   421-422   99 - 102   2010

  • Effect of incubation time on deposition behavior of Ruthenium films by MOCVD using (2,4-Dimethy lpentadienyl) (ethylcyclopentadienyl) Ruthenium

    Masaki Hirano, Kazuhisa Kawano, Hiroshi Funakubo

    Key Engineering Materials   421-422   87 - 90   2010

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  • Polarized Raman study for epitaxial PZT thick film with the mixture orientation of (100)/(001)

    Mitsumasa Nakajima, Takashi Fujisawa, Ken Nishida, Takashi Yamamoto, Minoru Osada, Hiroshi Naganuma, Soichiro Okamura, Hiroshi Funakubo

    ASIAN CERAMIC SCIENCE FOR ELECTRONICS III AND ELECTROCERAMICS IN JAPAN XII   421-422   99 - +   2010

  • Orientation dependence of ferroelectric transition temperature in strained epitaxial (Ba,Sr)TiO3 films

    Yamada Tomoaki, Takuwa Itaru, Kamo Takafumi, Iijima Takashi, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2010S   2A06 - 2A06   2010

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    DOI: 10.14853/pcersj.2010s.0.2a06.0

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  • Strain field imaging of 90° domain structure in PbTiO3/SrTiO3 thin film

    Kiguchi Takanori, Aoyagi Kenta, Konno Toyohiko J., Utsugi Satoru, Yamada Tomoaki, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2010S   1J26 - 1J26   2010

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    The geometric phase analysis of 90° domain structure of PbTiO3/SrTiO3 epitaxilal film and another oxide thin films using HAADF-STEM. The PbTiO3 film has two layered structure of a-c mixed layer on the completely c-domain layer. The lattice planes in the a-domain are strongly bended, which is related with the misfit dislocation. The a-domains does not contact with the PbTiO3/SrTiO3 interface.

    DOI: 10.14853/pcersj.2010s.0.1j26.0

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  • RF-sputtered BST film microwave tunable device on comparison between MgO(111) and (100) substrate

    M. Noda, M. Noda, T. Yamada, T. Torii, T. Kamo, K. Yamashita, K. Yamashita, H. Funakubo, M. Okuyama

    IEEE International Symposium on Applications of Ferroelectrics   2009.12

  • 2P5-1 An orientation-controlled KNbO_3 thick film transducer for high resolution ultrasonic imaging(Poster Session)

    Ishikawa Mutsuo, Einishi Hiro, Hasegawa Tomohito, Morita Takeshi, Saijo Yoshifumi, Kurosawa Minoru, Funakubo Hiroshi

    Proceedings of Symposium on Ultrasonic Electronics   30   321 - 322   2009.11

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    DOI: 10.24492/use.30.0_321

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  • Effect of film thickness on ferroelectric domain structure and properties of Pb(Zr0.35Ti0.65)O-3/SrRuO3/SrTiO3 heterostructures

    Hitoshi Morioka, Keisuke Saito, Shintaro Yokoyama, Takahiro Oikawa, Toshiyuki Kurosawa, Hiroshi Funakubo

    JOURNAL OF MATERIALS SCIENCE   44 ( 19 )   5318 - 5324   2009.10

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  • Orientation controlled deposition of Pb(Zr,Ti)O-3 films using a micron-size patterned SrRuO3 buffer layer

    Ken Nishida, Takashi Yamamoto, Minoru Osada, Osami Sakata, Shigeru Kimura, Keisuke Saito, Masamichi Nishide, Takashi Katoda, Shintaro Yokoyama, Hiroshi Funakubo

    JOURNAL OF MATERIALS SCIENCE   44 ( 19 )   5339 - 5344   2009.10

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  • Effects of Substrate Clamping on Electrical Properties of Polycrystalline Piezoelectric Films

    Tetsu Miyoshi, Mitsumasa Nakajima, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 9 )   09KD09-1-6   2009.9

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  • Preparation of (001)-Oriented CaBi4Ti4O15 and SrBi4Ti4O15 Films Using LaNiO3 Nucleation Layer on Pt-passivated Si Wafer

    Yuki Mizutani, Hiroshi Uchida, Hiroshi Funakubo, Seiichiro Koda

    JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 9 )   09KA10-1-4   2009.9

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  • Electric-Field-Induced Transverse Displacement in Pt/Pb(Zr,Ti)O-3 Film/Pt/Si Structure

    Takashi Yamamoto, Mitsutaka Yamamoto, Ken Nishida, Hiroshi Funakubo, Takashi Iijima, Toru Aiso, Yasuko Ichikawa

    JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 9 )   09KA04-1-4   2009.9

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  • Growth of Epitaxial KNbO3 Thick Films by Hydrothermal Method and Their Characterization

    Mutsuo Ishikawa, Keisuke Yazawa, Takashi Fujisawa, Shintaro Yasui, Tomoaki Yamada, Tomohito Hasegawa, Takeshi Morita, Minoru Kurosawa, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 9 )   09KA14-1-4   2009.9

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  • Raman Spectroscopy Evaluation of Oxygen Vacancy Migration by Electrical Field in Multilayer Ceramic Capacitors

    Ken Nishida, Hiroshi Kishi, Minoru Osada, Hiroshi Funakubo, Masamichi Nishide, Hironari Takeuchi, Takashi Katoda, Takashi Yamamoto

    JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 9 )   09KF11-1-4   2009.9

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  • Piezoelectric Properties of {100}-Oriented Epitaxial BiCoO3-BiFeO3 Films Measured Using Synchrotron X-ray Diffraction

    Shintaro Yasui, Osami Sakata, Mitsumasa Nakajima, Satoru Utsugi, Keisuke Yazawa, Tomoaki Yamada, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 9 )   09KD06-1-4   2009.9

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  • Characteristics of Undoped and Mn-Doped BiFeO3 Films Formed on Pt and SrRuO3/Pt Electrodes by Radio-Frequency Sputtering

    Jeong Hwan Kim, Hiroshi Funakubo, Yoshihiro Sugiyama, Hiroshi Ishiwara

    JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 9 )   09KB02-1-4   2009.9

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  • Electronic and Structural Properties of BiZn0.5Ti0.5O3

    Kaoru Miura, Makoto Kubota, Masaki Azuma, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 9 )   09KF05-1-4   2009.9

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  • Growth and characterization of polar-axis-oriented PZT thick films

    Materials integration   22 ( 9-10 )   17-24 - 24   2009.9

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  • In situ Observation of the Fatigue-Free Piezoelectric Microcantilever by Two-Dimensional X-ray Diffraction

    Hitoshi Morioka, Keisuke Saito, Takeshi Kobayashi, Shintaro Yasui, Toshiyuki Kurosawa, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 9 )   09KA03-1-5   2009.9

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  • Epitaxial Growth of KNbO_3 Thick Films by Hydrothermal Method and Their Characterization

    ISHIKAWA Mutsuo, EINISHI Hiroshi, HASEGAWA Tomohito, YAZAWA Keisuke, YASUI Shintaro, YAMADA Tomoaki, KUROSAWA Minoru, MORITA Takeshi, FUNAKUBO Hiroshi

    IEICE technical report   109 ( 135 )   11 - 13   2009.7

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    KNbO_3 films were grown at 240℃ by hydrothermal method from KOH and Nb_2O_5 as source materials. 16μm-thick epitaxial KNbO_3 thick films with {100}-orientation were successfully grown on (100)_cSrRuO_3//SrTiO_3 substrates for 3h. Clear hysteresis loops originated from the ferroelectricity were observed and a remanent polarization was 20μC/cm^2 at a maximum applied electric field of 220kV/cm. The dielectric constant and the dielectric loss were 415 and 8% at 100kHz, then an observed piezoelectric constant d_33 was 86pm/V in which case an area of electrode was 200μm in diameter.

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  • Combinatorial preparation process of Pb(Zr1-xTix)O-3 thin films by chemical solution deposition method

    Gang He, Takashi Iijima, Hiroshi Funakubo

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   117 ( 1365 )   698 - 702   2009.5

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  • Growth of Polar-axis-oriented Pb(Zr,Ti)O_3 Thick Films for Large Piezoresponse

    FUNAKUBO Hiroshi, FUJISAWA Takashi, YAMADA Tomoaki, ISHIKAWA Mutsuo

    63 ( 4 )   94-95 - 95   2009.4

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  • Influence of Pb and La Contents on the Lattice Configuration of La-Substituted Pb(Zr,Ti)O-3 Films Fabricated. by CSD Method International journal

    Hiromi Shima, Ken Nishida, Hiroshi Funakubo, Takashi Iijima, Takashi Katoda, Hiroshi Naganuma, Soichiro Okamura

    IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL   56 ( 4 )   687 - 692   2009.4

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  • Impact of 90 degrees-Domain Wall Motion in Pb(Zr0.43Ti0.57)O-3 Film on the Ferroelectricity Induced by an Applied Electric Field

    Hitoshi Morioka, Keisuke Saito, Hiroshi Nakaki, Rikyu Ikariyama, Toshiyuki Kurosawa, Hiroshi Funakubo

    APPLIED PHYSICS EXPRESS   2 ( 4 )   041401-1 -3   2009.4

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  • Low-Temperature Preparation of (111)-oriented Pb(Zr,Ti)O-3 Films Using Lattice-Matched (111)SrRuO3/Pt Bottom Electrode by Metal-Organic Chemical Vapor Deposition

    Hiroki Kuwabara, Akihiro Sumi, Shoji Okamoto, Hiromasa Hoko, Jeffrey S. Cross, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 4 )   04C067-1-4   2009.4

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  • Crystal structure and electrical property comparisons of epitaxial Pb(Zr,Ti)O-3 thick films grown on (100)CaF2 and (100)SrTiO3 substrates

    Takashi Fujisawa, Hiroshi Nakaki, Rikyu Ikariyama, Tomoaki Yamada, Mutsuo Ishikawa, Hitoshi Morioka, Hiroshi Funakubo

    JOURNAL OF APPLIED PHYSICS   105 ( 6 )   061614-1-5   2009.3

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  • Effect of bottom electrode on dielectric property of sputtered-(Ba,Sr)TiO3 films

    Shinichi Ito, Tomoaki Yamada, Kenji Takahashi, Shoji Okamoto, Takafumi Kamo, Hiroshi Funakubo, Ivoyl Koutsaroff, Marina Zelner, Andrew Cervin-Lawry

    JOURNAL OF APPLIED PHYSICS   105 ( 6 )   061606-1-4   2009.3

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  • Composition control and thickness dependence of {100}-oriented epitaxial BiCoO3-BiFeO3 films grown by metalorganic chemical vapor deposition

    Shintaro Yasui, Mitsumasa Nakajima, Hiroshi Naganuma, Soichiro Okamura, Ken Nishida, Takashi Yamamoto, Takashi Iijima, Masaki Azuma, Hitoshi Morioka, Keisuke Saito, Mutsuo Ishikawa, Tomoaki Yamada, Hiroshi Funakubo

    JOURNAL OF APPLIED PHYSICS   105 ( 6 )   061620-1-5   2009.3

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  • Preparation of SrBi_2Ta_2O_9 thin films by liquid delivery MOCVD method using RF plasma process

    JIMBO Takehito, SANO Haruyuki, FUNAKUBO Hiroshi, TOKUMITSU Eisuke, ISHIWARA Hiroshi

    IEICE technical report. Electron devices   98 ( 591 )   7 - 12   2009.2

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    Ferroelectric SrBi_2Ta_2O_9 thin films were prepared by liquid delivery MOCVD using a double alcoholate source. Film composition was adjusted by controlling the deposition temperature, reactor pressure and so on. SrBi_2Ta_2O_9 thin films which were deposited at 400℃ and subsequently annealed in O_2 atmosphere at 750℃ showed ferroelectricity. Pr and Ec was 2.OμC/cm^2 and 45kV/cm, respectively. Next, RF plasma was introduced, during the growth. However, it was found that SrBi_2Ta_2O_9 thin films were not clystallized at 400℃ even when RF plasma was applied. Then, post-annealing of SBT films in O_2 plasma was examined. Ferroelectric SrBi_2Ta_2O_9 thin films were obtained when they were deposited at 400℃ and subsequently annealed at 650℃ in O_2 plasma with a RF power of 150 W. Typical Pr and Ec was 1.5μC/cm^2 and 45kV/cm, respectively.

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  • Domain structure of (100)/(001)-oriented epitaxial PbTiO3 thick films with various volume fraction of (001) orientation grown by metal organic chemical vapor deposition

    Satoru Utsugi, Takashi Fujisawa, Rikyu Ikariyama, Shintaro Yasui, Hiroshi Nakaki, Tomoaki Yamada, Mutsuo Ishikawa, Masaaki Matsushima, Hitoshi Morioka, Hiroshi Funakubo

    APPLIED PHYSICS LETTERS   94 ( 5 )   1 - 3   2009.2

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  • Fabrication of conductive oxide polycrystalline BaPbO3 films by chemical solution deposition and their electrical resistivity

    Hiroshi Naganuma, Kayoko Yamada, Hiromi Shima, Kensuke Akiyama, Takashi Iijima, Hiroshi Funakubo, Soichiro Okamura

    JOURNAL OF ELECTROCERAMICS   22 ( 1-3 )   78 - 81   2009.2

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  • MOCVD growth of BiFeO3-based ferroelectric films and their characterization

    舟窪 浩, 安井 伸太郎, 山田 智明

    Materials integration   22 ( 2 )   25 - 31   2009.2

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  • Deposition of undoped indium oxide thin films on stripe-patterned substrates by spray CVD

    T. Kondo, H. Funakubo, K. Akiyama, H. Enta, Y. Seki, M. H. Wang, T. Uchida, Y. Sawada

    JOURNAL OF CRYSTAL GROWTH   311 ( 3 )   642 - 646   2009.1

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  • Strain-relaxed structure in (001)/(100)-oriented epitaxial Pb(Zr, Ti)O-3 films grown on (100) SrTiO3 substrates by metal organic chemical vapor deposition

    Hiroshi Nakaki, Yong Kwan Kim, Shintaro Yokoyama, Rikyu Ikariyama, Hiroshi Funakubo, Ken Nishida, Keisuke Saito, Hitoshi Morioka, Osami Sakata, Hee Han, Sunggi Baik

    JOURNAL OF APPLIED PHYSICS   105 ( 1 )   1 - 5   2009.1

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  • 放射光X線回折を用いたエピタキシャル酸化物薄膜の圧電特性の解析

    安井伸太郎, 藤澤隆志, 加茂嵩史, 中島光雅, 宇津木覚, 矢澤慶祐, 山田智明, 森岡仁, 森岡仁, 西田謙, 山本孝, 坂田修身, 坂田修身, 舟窪浩

    応用物理学関係連合講演会講演予稿集   56th ( 2 )   2009

  • エピタキシャルPb(Zr,Ti)O3膜のドメイン構造と電気特性の膜厚依存

    宇津木覚, 藤澤隆志, 安井伸太郎, 森岡仁, 森岡仁, 石河睦生, 山田智明, 舟窪浩

    セラミックス基礎科学討論会講演要旨集   47th   2009

  • MOCVD法で作成したエピタキシャルBiFeO3-BiCoO3薄膜の電気特性の結晶方位依存性

    安井伸太郎, 矢澤慶祐, 森岡仁, 森岡仁, 内田寛, 岡村総一郎, 飯島高志, 山田智明, 舟窪浩

    応用物理学会学術講演会講演予稿集   70th ( 2 )   2009

  • 強誘電体薄膜の電歪決定のためのナノ秒時分割X線回折

    坂田修身, 坂田修身, 矢橋牧名, 春木理恵, 春木理恵, 木村滋, 安井伸太郎, 舟窪浩

    日本放射光学会年会・放射光科学合同シンポジウム予稿集   22nd   2009

  • Effects of Substrate Clamping on Electrical Properties of Polycrystalline Piezoelectric Films

    Tetsu Miyoshi, Mitsumasa Nakajima, Hiroshi Funakubo

    Jpn. J.Appl. Phys.   48 ( 55 )   09KD09-1-6 - 84   2009

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    To clarify the effects of substrate clamping on electrical properties in polycrystalline piezoelectric films, a comparative study of aerosol deposition (AD)-processed film and bulk specimens was performed. It was found that there are two different effects of substrate clamping on electrical properties in polycrystalline piezoelectric films. 90domain wall motion is severely limited and makes little contribution to dielectric and piezoelectric responses due to an in-plane compressive stress state, resulting in significantly lower dielectric constant and field-induced strain. Furthermore, the c-domain distribution is increased by irreversible 90 domain wall motion from the a-domain to the c-domain due to an in-plane compressive stress during cooling through the phase transition temperature, resulting in higher remanent polarization.

    DOI: 10.1143/JJAP.48.09KD09

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  • Piezoelectric Properties of {100}-Oriented Epitaxial BiCoO3窶釘iFeO3 Films Measured Using Synchrotron X-ray Diffraction

    Shintaro Yasui, Osami Sakata, Mitsumasa Nakajima, Satoru Utsugi, Keisuke Yazawa, Tomoaki Yamada, Hiroshi Funakubo

    Jpn. J. Appl.Phys.   48   09KD06-1-4   2009

  • Raman Spectroscopy Evaluation of Oxygen Vacancy Migration by Electrical Field in Multilayer Ceramic Capacitors

    Ken Nishida, Hiroshi Kishi, Minoru Osada, Hiroshi Funakubo, Masamichi Nishide, Hironari Takeuchi, Takashi Katoda, Takashi Yamamoto

    Jpn. J.Appl. Phys.   48   09KF11-1-4   2009

  • Electronic and Structural Properties of BiZn0:5Ti0:5O3

    Kaoru Miura, Makoto Kubota, Masaki Azuma, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   48   09KF05-1-4   2009

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    DOI: 10.1143/JJAP.48.09KF05

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  • Characteristics of Undoped and Mn-Doped BiFeO3 Films Formed on Pt and SrRuO3/Pt Electrodes by Radio-Frequency Sputtering

    Jeong Hwan Kim, Hiroshi Funakubo, Yoshihiro Sugiyama, Hiroshi Ishiwara

    Jpn. J.Appl. Phys.   48   09KB02-1-4   2009

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    DOI: 10.1143/JJAP.48.09KB02

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  • Growth of Epitaxial KNbO3 Thick Films by Hydrothermal Method and Their Characterization

    Mutsuo Ishikawa, Keisuke Yazawa, Takashi Fujisawa, Shintaro Yasui, Tomoaki Yamada, Tomohito Hasegawa, Takeshi Morita, Minoru Kurosawa, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   48   09KA14-1-4   2009

  • Ligand Structure Effect on A Divalent Ruthenium Precursor for MOCVD

    Kazuhisa Kawano, Hiroaki Kosuge, Noriaki Oshima, Tadashi Arii, Yutaka Sawada, Hiroshi Funakubo

    Mater. Res. Soc. Symp. Proc.   1155   1155-C09-11   2009

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  • Composition dependency of epitaxial Pb(Zr,Ti)O3 films with different film thickness

    Shintaro Yokoyama, Hiroshi Funakubo, Hitoshi Morioka, Keisuke Saito, Tomoaki Yamada, Mutsuo Ishikawa

    Ferroelectrics   389 ( 1 )   10 - 17   2009

  • Growth of Epitaxial KNbO3 Thick Films by Hydrothermal Method and Their Characterization

    M. Ishikawa, K. Yazawa, T. Fujisawa, T. Hasegawa, T. Yamada, T. Morita, M. Kurosawa, H. Funakubo

    Jpn. J. Appl. Phys.   48 ( 9 )   09KA14-1 -09KA14-5   2009

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    DOI: 10.1143/JJAP.48.09KA14

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  • Electronic and structure propeties of BaTiO3: Propsal about the role of Ti3s and 3p states for ferroelectricity

    Kaoru Miura, Tatsuo Furuta, Hiroshi Funakubo

    Solid State Commun.   150   205 - 208   2009

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    DOI: 10.1016/j.ssc.2009.10.037

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  • Growth of Epitaxial Pb(Zr,Ti)O-3 Thick Films on (100)CaF2 Substrates with Perfect Polar-axis-orientation and Their Electrical and Mechanical Property Characterization

    Takashi Fujisawa, Hiroshi Nakaki, Rikyu Ikariyama, Mitsumasa Nakajima, Tomoaki Yamada, Mutsuo Ishikawa, Hitoshi Morioka, Takashi Iijima, Hiroshi Funakubo

    MATERIALS AND DEVICES FOR SMART SYSTEMS III   1129   39 - 44   2009

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  • Crystal Structure and Electrical Property Comparisons of Epitaxial Pb(Zr, Ti)O3 Thick Films Grown on (100)CaF2 and (100)SrTiO3 Substrates

    Takashi Fujisawa, Hiroshi Nakaki, Rikyu Ikariyama, Tomoaki Yamada, Mutsuo Ishikawa, Hiroshi Funakubo, Hitoshi Morioka

    J.Appl.Phys.   105   061614-1-5   2009

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  • Combinatorial Preparation Process of Pb(Zr1-xTix)O3 Thin Films by Chemical Solution Deposition Methods

    Gang He, akashi Iijima, Hiroshi Funakubo

    J. Ceram. Soc. Jpn.   117 ( 5 )   698 - 702   2009

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    DOI: 10.2109/jcersj2.117.698

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  • Low Temperature Preparation of (111)-oriented Pb(Zr, Ti)O3 Films Using Lattice 窶骭€ matched (111)SrRuO3/Pt Bottom Electrode by Metal Organic Chemical Vapor Deposition

    Hiroki Kuwabara, Akihiro Sumi, Shoji Okamoto, Hiromasa Hoko, Jeffrey S. Cross, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   48 ( 4 )   04C067-1-4   2009

  • Effect of bottom electrode on dielectric property of sputtered-(Ba,Sr) TiO3 films

    Shinichi Ito, Tomoaki Yamada, Kenji Takahashi, Shoji Okamoto, Takafumi Kamo, Hiroshi Funakubo, Ivoyl Koutsaroff, Marina Zelner, Andrew Cervin-Lawry

    J.Appl.Phys.   105   061606-1-4   2009

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    DOI: 10.1063/1.3058998

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  • Preparation of (001)-Oriented CaBi4Ti4O15 and SrBi4Ti4O15 Films Using LaNiO3 Nucleation Layer on Pt-passivated Si Wafer

    Yuki Mizutani, Hiroshi Uchida, Hiroshi Funakubo, Seiichiro Koda

    Jpn. J. Appl. Phys.   48   09KA10-1-4   2009

  • Effect of film thickness on ferroelectric domain structure and properties of Pb(Zr_<0.35>Ti_<0.65>)O_3/SrRuO_3/SrTiO_3 heterostructures Reviewed

    舟窪 浩

    J.Mater.Sci. 44   44   5318 - 5324   2009

  • The Effect of Precursor Ligands on the Deposition Characteristics of Ru Films by MOCVD

    Kazuhisa Kawano, Hiroaki Kosuge, Noriaki Oshima, Hiroshi Funakubo

    Electrochem. Solid-State Lett.   12 ( 10 )   D80-D83   2009

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    DOI: 10.1149/1.3191715

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  • Electric-Field-Induced Transverse Displacement in Pt/Pb(Zr,Ti)O3 Film/Pt/Si Structure

    Takashi Yamamoto, Mitsutaka Yamamoto, Takashi Yamamoto, Mitsutaka Yamamoto, Ken Nishida, Hiroshi Funakubo, Takashi Iijima, Toru Aiso, Yasuko Ichikawa

    Jpn. J. Appl. Phys.   48   09KA04-1-4   2009

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  • Orientation controlled deposition of Pb(Zr,Ti)O3 films using micron-size patterned SrRuO3 buffer layer

    ken nishida, akashi yamamoto, Minoru Osada, OSAMI SAKATA, Shigeru Kimura, Keisuke Saito, Masamichi Nishide, Takashi Katoda, Shintaro Yokoyama, HIROSHI FUNAKUBO

    J. Mater.Sci.   44   5339 - 5344   2009

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    DOI: 10.1007/s10853-009-3683-5

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  • Effect of the Annealing Temperature on Dielectric Properties of Bi1.5Zn1.0Nb1.5O7 Films Prepared by MOCVD

    Hiroshi Funakubo, Shingo Okaura, Muneyasu Suzuki, Hiroshi Uchida, Seiichiro Koda

    ELECTROCERAMICS IN JAPAN XI   388   175 - +   2009

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  • Growth of epitaxial KNbO3 thick films by hydrothermal method and their characterization

    Mutsuo Ishikawa, Keisuke Yazawa, Takashi Fujisawa, Shintaro Yasui, Tomoaki Yamada, Tomohito Hasegawa, Takeshi Morita, Minoru Kurosawa, Hiroshi Funakubo

    Japanese Journal of Applied Physics   48 ( 9 )   09 - KA145   2009

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  • Deposition of undoped indium oxide thin films on stripe-patterned substrates by spray CVD

    T.Kondo, H.Funakubo, K.Akiyama, H.Enta, Y.Seki, M.H.Wang, T.Uchida, Y.Sawada

    J. Crystal Growth   311   642 - 646   2009

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  • Strain-relaxed structure in (001)/(100)-oriented epitaxial Pb(Zr,Ti)O3 films grown on (100) SrTiO3 substrates by metal organic chemical vapor deposition

    Hiroshi Nakaki, Yong Kwan Kim, Shintaro Yokoyama, Rikyu Ikariyama, Hiroshi Funakubo, Ken Nishida, Keisuke Saito, Hitoshi Morioka, Osami Sakata, Hee Han, Sunggi Baik

    J. Appl. Phys.   105 ( 014107 )   1 - 5   2009

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  • Influence of Pb and La Contents on the Lattice Configuration of La-Substituted Pb(Zr,Ti)O3 Films Fablicated by CSD Method

    Hiromi Shima, Ken Nishida, Hiroshi Funakubo, Takashi Iijima, Takashi Katoda, Hiroshi Naganuma, Souichiro Okamura

    IEEE Trans. Urtla, Ferro. Freq. Control   56 ( 4 )   687 - 692   2009

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    DOI: 10.1109/TUFFC.2009.1091

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  • Composition control and thickness dependence of {100}-oriented epitaxial BiCoO3-BiFeO3 films grown by metalorganic chemical vapor deposition

    Hiroshi Funakubo

    J.Appl.Phys.   105   061620-1-5   2009

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    DOI: 10.1063/1.3073824

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  • Fabrication of conductive oxide polycrystalline BaPbO3 films by chemical solution deposition and their electrical resistivity

    Hiroshi Naganuma, Kayoko Yamada, Hiromi Shima, Kensuke Akiyama, Takashi Iijima, Hiroshi Funakubo, SoichiroOkamura

    J Electroceram   22   78 - 81   2009

  • Growth of Epitaxial Potassium Niobate Film on (100)SrRuO3/(100)SrTiO3 by Hydrothermal Method and their Electromechanical Properties

    Mutsuo Ishikawa, Shintaro Yasui, Satoru Utsugi, Takashi Fujisawa, Tomoaki Yamada, Takeshi Morita, Minoru Kurosawa, Hiroshi Funakubo

    MICROELECTROMECHANCIAL SYSTEMS - MATERIALS AND DEVICES II   1139 ( 1139-GG03-52 )   187 - 192   2009

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  • Impact of 90o Domain Wall Motion in Pb(Zr0:43Ti0:57)O3 Film on the Ferroelectricity Induced by an Applied Electric Field

    Hitoshi Morioka, Keisuke Saito, Hiroshi Nakaki, Rikyu Ikariyama, Toshiyuki Kurosawa, Hiroshi Funakubo

    Applied Physics Express 2   041401-1 -3   2009

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    DOI: 10.1143/APEX.2.041401

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  • Good conformability of indium-tin-oxide thin films prepared by spray chemical vapor deposition

    Takeshi Kondo, Yutaka Sawada, Hiroshi. Funakubo, Kensuke Akiyama, Takanori Kiguchi, Meihan Wang Wang, Takayuki Uchida

    Electrochem. Solid-State Lett.   12 ( 5 )   D42-D44   2009

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  • CaF2基板上への(001),(101),(111)配向エピタキシャルPb(Zr0.35,Ti0.65)O3膜の作製と評価

    宇津木覚, 藤澤隆志, 江原祥隆, 安井伸太郎, 森岡仁, 森岡仁, 石河睦生, 山田智明, 飯島高志, 舟窪浩

    応用物理学会学術講演会講演予稿集   70th ( 2 )   2009

  • Large ferroelectricity of PbTiO3 films grown on CaF2 substrates

    Funakubo Hiroshi, Utsugi satoru, Fujisawa Takashi, Yasui Shintaro, Morioka Hitoshi, Ihsikawa Mutsuo, Matsushima Masaaki, Yamada Tomoaki

    Preprints of Annual Meeting of The Ceramic Society of Japan<br>Preprints of Fall Meeting of The Ceramic Society of Japan   2009 ( 0 )   2L17 - 2L17   2009

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    強誘電性の発現はドメインの反転が出来るかにかかっており、そのためには、電極と強誘電体の界面の構造やドメイン壁の構造が大きく影響すると考えられる。本研究では、PbTiO3を作製する際に、熱歪の少ないCaF2を用いることで、広い膜厚範囲で大きな強誘電性の発現に成功したので報告する。

    DOI: 10.14853/pcersj.2009F.0.2L17.0

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  • Growth of Bi(Zn1/2Ti1/2)O3 –Based Epitaxial Ferroelectric Films and Their Properties

    Funakubo Hiroshi, Yazawa Keisuke, Yasui Shintaro, Matsushima Masaaki, Uchida Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br>Preprints of Fall Meeting of The Ceramic Society of Japan   2009 ( 0 )   1A19 - 1A19   2009

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    Bi(Zn1/2Ti1/2)O3は大きな強誘電体c/a比を有する正方晶強誘電体として知られており、これを母材とした強誘電体や圧電体は、大きな残留分極や圧電性が期待できる。本件旧では、BiFeO3との固溶体膜を作製し、その結晶構造および特性評価を行ったので、報告する。

    DOI: 10.14853/pcersj.2009F.0.1A19.0

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  • Composition Dependency of Epitaxial Pb(Zr,Ti)O-3 Films with Different Film Thickness

    Shintaro Yokoyama, Hiroshi Funakubo, Hitoshi Morioka, Keisuke Saito, Tomoaki Yamada, Mutsuo Ishikawa

    FERROELECTRICS   389 ( 1 )   10 - 17   2009

  • The Effect of Precursor Ligands on the Deposition Characteristics of Ru Films by MOCVD

    Kazuhisa Kawano, Hiroaki Kosuge, Noriaki Oshima, Hiroshi Funakubo

    ELECTROCHEMICAL AND SOLID STATE LETTERS   12 ( 10 )   D80 - D83   2009

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  • Ligand Structure Effect on A Divalent Ruthenium Precursor for MOCVD

    Kazuhisa Kawano, Hiroaki Kosuge, Noriaki Oshima, Tadashi Arii, Yutaka Sawada, Hiroshi Funakubo

    Mater. Res. Soc. Symp. Proc.   1155   1155-C09-11   2009

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    DOI: 10.1557/proc-1155-c09-11

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  • Strain-relaxed structure in (001)/(100)-oriented epitaxial Pb(Zr,Ti)O3 films grown on (100) SrTiO3 substrates by metal organic chemical vapor deposition

    Hiroshi Nakaki, Yong Kwan Kim, Shintaro Yokoyama, Rikyu Ikariyama, Hiroshi Funakubo, Ken Nishida, Keisuke Saito, Hitoshi Morioka, Osami Sakata, Hee Han, Sunggi Baik

    J. Appl. Phys.   105 ( 014107 )   1 - 5   2009

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  • Good Conformability of Indium-Tin Oxide Thin Films Prepared by Spray Chemical Vapor Deposition

    Takeshi Kondo, Yutaka Sawada, Hiroshi Funakubo, Kensuke Akiyama, Takanori Kiguchi, Meihan Wang, Takayuki Uchida

    ELECTROCHEMICAL AND SOLID STATE LETTERS   12 ( 5 )   D42 - D44   2009

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  • Bi(Zn1/2Ti1/2)O3基強誘電体エピタキシャル膜の作製と評価

    矢澤慶祐, 安井伸太郎, 松島正明, 内田寛, 岡村総一郎, 飯島高志, 舟窪浩

    応用物理学関係連合講演会講演予稿集   56th ( 2 )   2009

  • 分極軸配向したジルコン酸チタン酸鉛厚膜の結晶構造と特性評価

    舟窪浩, 藤澤隆志, 山田智明, 石河睦生, 加茂嵩史, 中島光雅, 安井伸太郎, 森岡仁, 坂田修身, 坂田修身, 飯島高志

    日本金属学会講演概要   144th   2009

  • エピタキシャルPbTiO3膜のドメイン構造と電気特性の膜厚依存

    宇津木覚, 藤澤隆志, 安井伸太郎, 森岡仁, 森岡仁, 石河睦生, 山田智明, 舟窪浩

    応用物理学関係連合講演会講演予稿集   56th ( 2 )   2009

  • 電場印加下でのその場X線回折用温度制御試料チャンバ

    坂田修身, 山田智明, 安井伸太郎, 中嶋誠二, 清水勝, 舟窪浩

    日本放射光学会年会・放射光科学合同シンポジウム予稿集   23rd   2009

  • 強誘電体薄膜の電歪決定法:ナノ秒オーダーの時分割シンクロトロン回折と電気分極のその場測定

    坂田修身, 安井伸太郎, 山田智明, 舟窪浩

    日本結晶学会年会講演要旨集   2009   2009

  • CaF2基板上に作製したエピタキシャルPb(Zr,Ti)O3厚膜の強誘電特性の組成依存

    江原祥隆, 宇津木覚, 中島光雅, 森岡仁, 森岡仁, 山田智明, 舟窪浩

    応用物理学会学術講演会講演予稿集   70th ( 2 )   2009

  • 多結晶BiFeO3薄膜における電界誘起歪の時分割X線回折測定

    中嶋誠二, 坂田修身, 坂田修身, PARK J.M., 後藤田文也, 金島岳, 舟窪浩, 奥山雅則

    応用物理学関係連合講演会講演予稿集   56th ( 2 )   2009

  • 巨大正方晶歪みを有するBi(Zn1/2Ti1/2)O3-BiFeO3エピタキシャル膜の作製と評価

    矢澤慶祐, 安井伸太郎, 松島正明, 内田寛, 飯島高志, 山田智明, 舟窪浩

    応用物理学会学術講演会講演予稿集   70th ( 2 )   2009

  • Orientation dependence of the residual strain in epitaxial (Ba,Sr)TiO3 thin films and the resulting dielectric properties

    Yamada Tomoaki, Kamo Takafumi, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2009F   2E23 - 2E23   2009

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    DOI: 10.14853/pcersj.2009f.0.2e23.0

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  • Geometric phase analysis of nano-strain field in oxide thin films

    Kiguchi Takanori, Aoyagi Kenta, Konno Toyohiko J., Wakiya Naoki, Shinozaki Kazuo, Utsugi Satoru, Yamada Tomoaki, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2009F   2E01 - 2E01   2009

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    The geometric phase analysis of 90˚ domain structure of PbTiO3/SrTiO3 epitaxilal film and another oxide thin films using HAADF-STEM. The PbTiO3 film has two layered structure of a-c mixed layer on the completely c-domain layer. The latter layer has longer c-axis than that of the former because of the pseudomorphism. The lattice planes in the a-domain are strongly bended, which is related with the misfit dislocation.

    DOI: 10.14853/pcersj.2009f.0.2e01.0

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  • Fabrication of perovskite-type oxide ceramics in Ba-Cu-Mg-Nb system

    Kamimura Yusuke, Lee Bong-Yeon, Yazawa Keisuke, Funakubo Hiroshi, Takashi Iijima, Uchida Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2009F   1PA24 - 1PA24   2009

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    DOI: 10.14853/pcersj.2009f.0.1pa24.0

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  • Preparation of (001)-high oriented (Ca,Sr)Bi4Ti4O15 film on Si substrate

    Mizutani Yuki, Uchida Hiroshi, Funakubo Hiroshi, Koda Seiichiro

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2009S   5 - 5   2009

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    DOI: 10.14853/pcersj.2009s.0.5.0

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  • Structural Analysis of PX-phase Pb-Ti-O Single-crystal Nanowires using Micro X-ray Beam

    Yamada Tomoaki, Wang Jin, Sandu Cosmin, He Zhanbing, Setter Nava, Sakata Osami, Kamo Takafumi, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2009S   169 - 169   2009

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    Pb-Ti-O single-crystal nanowires having an unknown precise crystal structure called PX-phase were analyzed using micro x-ray beam at SPring8. The nanowires were fabricated by hydrothermal synthesis method and were dispersed on the substrate. The dispersed nanowires were mapped by scanning a micro x-ray beam, which enables us to focus the x-ray beam on a single nanowire. The x-ray diffraction of the single wire indicates that the longitudinal of the nanowire is perpendicular to the (001) plane, and the lattice spacing of (100) and (010) is identical.

    DOI: 10.14853/pcersj.2009s.0.169.0

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  • Self-assembled growth of BaTiO3-CeO2 oriented nanocomposite films and their tunable dielectric properties

    Yamada Tomoaki, Sandu Cosmin, Gureev Maxim, Tagantsev Alexander, Setter Nava, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2009F   2A20 - 2A20   2009

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    DOI: 10.14853/pcersj.2009f.0.2a20.0

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  • Preferential crystal growth of c-axis oriented (Ca,Sr)Bi4Ti4O15 dielectric films using perovskite-type oxide buffer layers

    Mizutani Yuki, Uchida Hiroshi, Funakubo Hiroshi, Koda Seiichiro

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2009F   1PE04 - 1PE04   2009

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    DOI: 10.14853/pcersj.2009f.0.1pe04.0

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  • MOCVD Growth of Dielectric Films and Their Physical Properties

    Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2009S   154 - 154   2009

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    DOI: 10.14853/pcersj.2009s.0.154.0

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  • Property improvement of PLZT capacitor using CaRuO3 top electrode: The 27th electronics seminar ; マイクロデバイス用のペロブスカイト酸化物電極材料の取捨選択

    27   15 - 20   2008.11

  • 1J1-3 Epitaxial KNbO_3 Films Grown on SrRuO_3/SrTiO_3 using Hydrothermal Method and Their Electromechanical Properties(Ultrasonic properties of materials, Phonon physics)

    Ishikawa Mutsuo, Utsugi Satoru, Fujisawa Takashi, Yasui Shintaro, Yamada Tomoaki, Kurosawa Minoru, Morita Takeshi, Funakubo Hiroshi

    Proceedings of Symposium on Ultrasonic Electronics   29   5 - 6   2008.11

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    High quality epitaxial KNbO_3 films were successfully grown on (100)SrRuO_3//(100)SrTiO_3 substrates by hydrothermal method. The KNbO_3 or KNbO_3-based materials are one of the promising lead-free piezoelectric materials as an environmental friendly material; however, the main interest in the KNbO_3-based piezoelectric materials have limited on bulk ceramics materials owing to the difficulty in thin or thick films preparation. Therefore the hydrothermal method has utilized for the growth of KNbO_3 films. Because, hydrothermal method has number of advantages for fabrication method of ultrasonic transducers; low deposition temperature, good conformability, high-purity deposition on a substrate. In this study, epitaxial SrRuO_3 film was used as bottom electrodes, which were grown on (100) SrTiO_3 substrate by sputter method. KNbO_3 films were prepared on (100) SrRrO_3//SrTiO_3 substrates at 210 ℃ by hydrothermal method. The KNbO_3 films were 7.5 μm thicknesses, and the K/Nb ratio measured by EDS was 50/50. The piezoelectric performance and material constants of the prepared KNbO_3 thick film were measured.

    DOI: 10.24492/use.29.0_5

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  • Dimensionality-Controlled Insulator-Metal Transition and Correlated Metallic State in 5d Transition Metal Oxides Srn+1IrnO3n+1 (n=1, 2, and infinity)

    S. J. Moon, H. Jin, K. W. Kim, W. S. Choi, Y. S. Lee, J. Yu, G. Cao, A. Sumi, H. Funakubo, C. Bernhard, T. W. Noh

    PHYSICAL REVIEW LETTERS   101 ( 22 )   1 - 4   2008.11

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  • Dimensionality-Controlled Insulator-Metal Transition and Correlated Metallic State in 5d Transition Metal Oxides Srn+1IrnO3n+1 (n=1, 2, and infinity)

    S. J. Moon, H. Jin, K. W. Kim, W. S. Choi, Y. S. Lee, J. Yu, G. Cao, A. Sumi, H. Funakubo, C. Bernhard, T. W. Noh

    PHYSICAL REVIEW LETTERS   101 ( 22 )   1 - 4   2008.11

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  • 1 V saturated Pb(Zr, Ti)O-3 films with (111) orientation using lattice-matched (111)SrRuO3/(111)Pt bottom electrode prepared by pulsed metal organic chemical vapor deposition

    Hiroki Kuwabara, Nicolas Menou, Hiroshi Funakubo

    APPLIED PHYSICS LETTERS   93 ( 15 )   152901-1 - 3   2008.10

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  • 1 V saturated Pb(Zr, Ti)O-3 films with (111) orientation using lattice-matched (111)SrRuO3/(111)Pt bottom electrode prepared by pulsed metal organic chemical vapor deposition

    Hiroki Kuwabara, Nicolas Menou, Hiroshi Funakubo

    APPLIED PHYSICS LETTERS   93 ( 15 )   152901-1 - 3   2008.10

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  • Langmuir-Blodgett fabrication of nanosheet-based dielectric films without an interfacial dead layer

    Minoru Osada, Kosho Akatsuka, Yasuo Ebina, Yoshinori Kotani, Kanta Ono, Hiroshi Funakubo, Shigenori Ueda, Keisuke Kobayashi, Kazunori Takada, Takayoshi Sasaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 9 )   7556 - 7560   2008.9

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  • Annealing temperature dependences of ferroelectric and magnetic properties in polycrystalline Co-substituted BiFeO3 films

    Hiroshi Naganuma, Jun Miura, Mitsumasa Nakajima, Hiromi Shima, Soichiro Okamura, Shintaro Yasui, Hiroshi Funakubo, Ken Nishida, Takashi Iijima, Masaki Azuma, Yasuo Ando, Kenji Kamishima, Koichi Kakizaki, Nobuyuki Hiratsuka

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 9 )   7574 - 7578   2008.9

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  • Raman spectroscopy study of oxygen vacancies in PbTiO3 thin films generated heat-treated in hydrogen atmosphere

    Ken Nishida, Minoru Osada, Hironari Takeuchi, Ishimoto Yosiaki, Joe Sakai, Nobuaki Ito, Rikyu Ikariyama, Takafumi Kamo, Takashi Fujisawa, Hiroshi Funakubo, Takashi Katoda, Takashi Yamamoto

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 9 )   7510 - 7513   2008.9

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  • In-plane lattice strain evaluation in piezoelectric microcantilever by two-dimensional X-ray diffraction

    Hitoshi Morioka, Keisuke Saito, Takeshi Kobayashi, Toshiyuki Kurosawa, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 9 )   7537 - 7540   2008.9

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  • Crystal structure and electrical properties of {100}-oriented epitaxial BiCoO3-BiFeO3 films grown by metalorganic chemical vapor deposition

    Shintaro Yasui, Hiroshi Naganuma, Soichiro Okamura, Ken Nishida, Takashi Yamamoto, Takashi Iijima, Masaki Azuma, Hitoshi Morioka, Keisuke Saito, Mutsuo Ishikawa, Tomoaki Yamada, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 9 )   7582 - 7585   2008.9

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  • In-plane lattice strain evaluation in piezoelectric microcantilever by two-dimensional X-ray diffraction

    Hitoshi Morioka, Keisuke Saito, Takeshi Kobayashi, Toshiyuki Kurosawa, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 9 )   7537 - 7540   2008.9

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  • Rhombohedral-tetragonal phase boundary with high curie temperature in (1-x)BiCoO3-xBiFeO(3) solid solution

    Masaki Azuma, Seiji Niitaka, Naoaki Hayashi, Kengo Oka, Mikio Takano, Hiroshi Funakubo, Yuichi Shimakawa

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 9 )   7579 - 7581   2008.9

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  • Experimental evidence of strain relaxed domain structure,in (100)/(001) oriented epitaxial lead titanate thick films grown by metalorganic the mical vapor deposition Reviewed

    舟窪 浩

    J. Appl. Phys 104   104 ( 6 )   064121-1 - 6   2008.9

  • Electrooptic and piezoelectric properties of (Pb,La)(Zr,Ti)O-3 films with various Zr/Ti ratios

    Hiromi Shima, Takashi Iijima, Hiroshi Funakubo, Takashi Nakajima, Hiroshi Naganuma, Soichiro Okamura

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 9 )   7541 - 7544   2008.9

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  • Recent Development on Film Preparation of Oxide Materials with Perovskite Structure

    FUNAKUBO Hiroshi, YAMADA Tomoaki

    Ceramics Japan   43 ( 8 )   634 - 638   2008.8

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  • Thick epitaxial Pb(Zr-0.35,Ti-0.65)O-3 films grown on (100)CaF2 substrates with polar-axis-orientation

    Takashi Fujisawa, Hiroshi Nakaki, Rikyu Ikariyama, Hitoshi Morioka, Tomoaki Yamada, Keisuke Saito, Hiroshi Funakubo

    APPLIED PHYSICS EXPRESS   1 ( 8 )   085001-1-3   2008.8

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  • Step coverage study of indium-tin-oxide thin films by spray CVD on non-flat substrates at different temperatures

    T. Kondo, Y. Sawada, K. Akiyama, H. Funakubo, T. Kiguchi, S. Seki, M. H. Wang, T. Uchida

    THIN SOLID FILMS   516 ( 17 )   5864 - 5867   2008.7

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  • Supercell structure on continuous growth of Bi2Sr2Ca1Cu2Ox film

    Satoru Kaneko, Kensuke Akiyama, Takeshi Ito, Yasuo Hirabayashi, Hiroshi Funakubo, Mamoru Yoshimoto

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 7 )   5602 - 5604   2008.7

  • Low strain sensitivity of the dielectric property of pyrochlore Bi-Zn-Nb-O films

    Hiroshi Funakubo, Shingo Okaura, Muneyasu Suzuki, Hiroshi Uchida, Seiichiro Koda, Rikyu Ikariyama, Tomoaki Yamada

    APPLIED PHYSICS LETTERS   92 ( 18 )   182901-1 - 3   2008.5

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  • Single domain epitaxial growth of yttria-stabilized zirconia on Si(111) substrate

    S. Kaneko, K. Akiyama, T. Ito, Y. Hirabayashi, S. Ohya, T. Oguni, Y. Sawada, H. Funakubo, M. Yoshimoto

    CERAMICS INTERNATIONAL   34 ( 4 )   1047 - 1050   2008.5

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  • Structural modulation in bismuth cuprate superconducting film with continuous epitaxial growth

    Satoru Kaneko, Kensuke Akiyama, Takeshi Ito, Yoshitada Shimizu, Yasuo Hirabayashi, Seishiro Ohya, Hiroshi Funakubo, Mamoru Yoshmioto

    JOURNAL OF CRYSTAL GROWTH   310 ( 7-9 )   1713 - 1717   2008.4

  • Epitaxial growth of (100) Fe3Si thin films on insulating substrates

    Kensuke Akiyama, Teiko Kadowaki, Satoru Kaneko, Azusa Kyoduka, Yutaka Sawada, Hiroshi Funakubo

    JOURNAL OF CRYSTAL GROWTH   310 ( 7-9 )   1703 - 1707   2008.4

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  • Enhancement of ferroelectric and magnetic properties in BiFeO(3) films by small amount of cobalt addition

    Hiroshi Naganuma, Nozomi Shimura, Jun Miura, Hiromi Shima, Shintaro Yasui, Ken Nishida, Takashi Katoda, Takashi Iijima, Hiroshi Funakubo, Soichiro Okamura

    JOURNAL OF APPLIED PHYSICS   103 ( 7 )   07E314-1-3   2008.4

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  • Preparation of (111)-oriented SrRuO3/Pt electrodes for Pb(Zr,Ti)O-3-based ferroelectric capacitors: Grain size and roughness impact

    Nicolas Menou, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 2 )   1003 - 1007   2008.2

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  • Morphology of sol-gel produced composite films for optical oxygen sensors

    S. Anastasova, M. Milanova, E. Kashchieva, H. Funakubo, T. Kamo, N. Grozev, P. Stefanov, D. Todorovsk

    APPLIED SURFACE SCIENCE   254 ( 6 )   1545 - 1558   2008.1

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  • Epitaxial growth of ferromagnetic iron silicide thin films on silicon with yttria-stabilized zirconia buffer layer

    Kensuke Akiyama, Satoru Kaneko, Teiko Kadowaki, Yasuo Hirabayashi, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 1 )   577 - 579   2008.1

  • Effect of strain on supercell structure of bismuth cuprate superconducting film

    Satoru Kaneko, Kensuke Akiyama, Masahiko Mitsuhashi, Takeshi Ito, Masao Kuniagai, Hiroshi Funakubo, Mamoru Yoshimoto

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 1 )   664 - 666   2008.1

  • In situ gas-phase FTIR monitoring of liquid delivery MOCVD process for PZT film preparation

    Hiroshi Funakubo, Gouji Asano, Kazuaki Tonari, Yukichi Takamatsu, Kunio Ohtsuki, Tsukasa Satake

    CHEMICAL ENGINEERING JOURNAL   135 ( 1-2 )   10 - 14   2008.1

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  • 偏光ラマン分光法を用いた分極軸単一配向した正方晶PZT厚膜の評価

    中島光雅, 藤沢隆志, 加茂嵩史, 安井伸太郎, 長田実, 西田謙, 山本孝, 河東田隆, 永沼博, 岡村総一郎, 舟窪浩

    応用物理学関係連合講演会講演予稿集   55th ( 2 )   2008

  • Co-BiFeO3薄膜における抗電界の低減および自発磁化の発現

    永沼博, 三浦淳, 志村希, 安井伸太郎, 西田謙, 飯島高志, 舟窪浩, 岡村総一郎

    応用物理学関係連合講演会講演予稿集   55th ( 2 )   2008

  • MOCVD法で作製したエピタキシャルBiFeO3-BiCoO3膜の結晶相と電気特性

    安井伸太郎, 永沼博, 岡村総一郎, 西田謙, 山本孝, 飯島高志, 東正樹, 森岡仁, 森岡仁, 斎藤啓介, 舟窪浩

    応用物理学関係連合講演会講演予稿集   55th ( 2 )   2008

  • MPBを有するBiFcO3-BiCoO3エピタキシャル薄膜の磁性と強誘電性

    永沼博, 安井伸太郎, 西田謙, 舟窪浩, 飯島高志, 安藤康夫, 岡村総一郎

    日本磁気学会学術講演概要集   32nd   2008

  • 放射光X線を用いた(001)配向エピタキシャルBiFeO3薄膜の電界印加による結晶構造変化の直接観察

    安井伸太郎, 加茂嵩史, 藤澤隆志, 山田智明, 坂田修身, 坂田修身, 舟窪浩

    応用物理学会学術講演会講演予稿集   69th ( 2 )   2008

  • パイロクロア構造導電体Bi2Ru2O7のエピタキシャル膜のMOCVD合成と(Bi1.5Zn0.5)(Zn0.5Nb1.5)O7用電極としての検討

    碇山理究, 舟窪浩, 安井伸太郎, 山田智明, 森岡仁, 森岡仁, 斉藤啓介, 小林義彦, 小林義彦, 金子徹也, 浅井吉蔵

    応用物理学会学術講演会講演予稿集   69th ( 2 )   2008

  • Development of a synchrotron-based nano-sec-order time-resolved diffraction method for in-situ lattice-strain analysis of ferroelectric thin films under an applied pulse electric field

    Sakata Osami, Yasui Shintaro, Fujisawa Takashi, Kamo Takafumi, Nakashima Seiji, Okuyama Masanori, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br>Preprints of Fall Meeting of The Ceramic Society of Japan   2008 ( 0 )   119 - 119   2008

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    Language:Japanese   Publisher:The Ceramic Society of Japan  

    ナノ秒オーダーのパルス電場によって薄膜内で誘起される格子歪を検出する時分割X線測定と誘電率の高速測定を組み合わせた新しいシンクロトロン回折法を開発した。エピタキシャル成長させた強誘電体単結晶薄膜(Pb(Zr&lt;SUB&gt;x&lt;/SUB&gt;Ti&lt;SUB&gt;1-x&lt;/SUB&gt;)O&lt;SUB&gt;3&lt;/SUB&gt;(PZT)、BiFeO&lt;SUB&gt;3&lt;/SUB&gt;(BFO))やBFO多結晶薄膜の構造評価にその方法を適用した。すなわち、パルス状の入射単色X線と試料への印加電場をタイミング制御し、生じるブラッグ反射近傍の回折強度を角度、時間の関数として記録した。その結果、ナノ秒オーダーの電場印加によって誘起される格子歪(約0.01%レベルまで)を検出できた。さらに、回折ピークシフトから圧電定数d&lt;SUB&gt;33&lt;/SUB&gt;を見積った。

    DOI: 10.14853/pcersj.2008F.0.119.0

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  • 放射光を用いた時分割X線回折による多結晶BiFeO3薄膜の電界誘起歪測定

    中嶋誠二, 坂田修身, 坂田修身, 金島岳, 舟窪浩, 奥山雅則

    応用物理学会学術講演会講演予稿集   69th ( 2 )   2008

  • Observation of 1D and 2D nanostructures using the X-ray reciprocal-lattice space imaging method

    Osami Sakata, Wataru Yashiro, David R. Bowler, Kunihiro Sakamoto, Kazushi Miki, Masashi Nakamura, Hiroshi Funakubo

    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES   64   C548 - C549   2008

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    Language:English   Publishing type:Research paper, summary (international conference)  

    DOI: 10.1107/S0108767308082378

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  • ナノ秒オーダー時分割シンクロトロンその場X線回折:強誘電体薄膜の電歪測定への適用

    坂田修身, 坂田修身, 安井伸太郎, 藤澤隆志, 加茂嵩史, 中嶋誠二, 木村滋, 奥山雅則, 舟窪浩

    応用物理学会学術講演会講演予稿集   69th ( 2 )   2008

  • BiFeO3-BiCoO3固溶体薄膜の磁気特性および強誘電性

    永沼博, 安井伸太郎, 西田謙, 飯島高志, 舟窪浩, 岡村総一郎, 安藤康夫

    応用物理学会学術講演会講演予稿集   69th ( 2 )   2008

  • MOCVD法によるエピタキシャルパイロクロア導電膜の作製とこれを用いたキャパシタの評価

    碇山理究, 安井伸太郎, 舟窪浩, 斎藤啓介, 森岡仁, 森岡仁

    セラミックス基礎科学討論会講演要旨集   46th   2008

  • MOCVD法によるBiFeO3-BiCoO3膜の作製と特性評価

    安井伸太郎, 舟窪浩, 永沼博, 岡村総一郎, 西田謙, 山本孝, 飯島高志, 森岡仁, 斎藤啓介

    セラミックス基礎科学討論会講演要旨集   46th   2008

  • “Low strain sensitivity of the dielectric property of pryrochlore Bi-Zn-Nb-O films”

    Hiroshi Funakubo, Shingo Okaura, Muneyau Suzuki, Hiroshi Uchida, Seiichiro Koda, Rikyu Ikariyama, Tomoaki Yamada

    Appl.Phys.Lett.   92   182901-1 - 3   2008

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  • “Morphology of sol窶堵el produced composite films for optical oxygen sensors”

    S. Anastasova, M. Milanova, E. Kashchieva, HIROSHI FUNAKUBO, Takafumi Kamo, N. Grozev, P. Stefanov, D. Todorovsky

    Applied Surface Science,   254   1545窶骭€1558.   2008

  • "Single domain epitaxial growth of yttria-stabilized zirconia on Si(111) substrate"

    S. Kaneko, K. Akiyama, T. Ito, Y. Hirabayashi, S. Ohya, T. Oguni, Y. Sawada, H. Funakubo, M. Yoshimoto

    Ceramics International   34 ( 4 )   1047 - 1050   2008

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  • “In-Plane Rotated Crystal Structure in Continuous Growth of BismuthCuprate Superconducting Film”

    Satoru Kaneko, Kensuke Akiyama, Takeshi Ito, Yasuo Hirabayashi, Hiroshi Funakubo, Mamoru Yoshimoto

    Solid State Phenomena   139   53 - 58   2008

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  • “Epitaxial growth of (1 0 0) Fe3Si thin films on insulating substrates”

    Kensuke Akiyama, Teiko Kadowaki, Satoru Kaneko, Azusa Kyoduka, Yutaka Sawada, Hiroshi Funakubo

    J. Crystal Growth   310   1703窶骭€1707   2008

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  • Temperature dependency of dielectric properties in epitaxially grown SrBi(4)Ti(4)O(15) films with different orientation

    Hiroshi Funakubo, Muneyasu Suzuki, Kenji Takahashi, Takayuki Watanabe

    HIGH-PERFORMANCE CERAMICS V, PTS 1 AND 2   368-372   1811 - 1813   2008

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  • Cubic-on-cubic growth of a MgO(001) thinfilm prepared on Si(001) substrate at lowambient pressure by the sputtering method

    Satoru Kaneko, HIROSHI FUNAKUBO, T. Kadowaki, Y. Hirabayashi, Kensuke Akiyama

    EPL   81   46001-1-5   2008

  • Tin Oxide Thin Films Deposited by Spray CVD Using Ethanol Solution of Tin (II) Chloride

    Takeshi Kondo, Hiroshi Funakubo, Kensuke Akiyama, Meihan Wang, Takayuki Uchida, Yutaka Sawada

    Trans. Mater. Soc. Jpn.   33 ( 4 )   1363 - 1366   2008

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  • Growth Mechanism of Indium-Tin-Oxide Transparent Conducting Films Prepared by Spray CVD

    Takeshi Kondo, Takeshi Aoyama, Chikako Kobayashi, Shigeyuki Seki, Takayuki Uchida, Yoshiyuki Seki, Hiroyuki Enta, Hiroshi Funakubo, Kouji Ninomiya, Aki Iwasawa, Riko Ozao, Toetsu Shishido, Yutaka Sawada

    J. Flux Growth,   3 ( 1 )   14 - 17   2008

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  • “Rhombohedral-Tetragonal Phase Boundary with High Curie Temperature in (1-x) BiCoO3 – xBiFeO3 Solid Solution”

    Masaki Azuma, Seiji Niitaka, Naoaki Hayashi, Kengo Oka, Mikio Takano, Hiroshi Funakubo, Yuichi Shimakawa

    Jpn. J. Appl. Phys.   47   7579 - 7581   2008

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    DOI: 10.1143/JJAP.47.7579

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  • X-ray diffraction study of polycrystalline BiFeO3 thin films under electric field

    Seiji Nakashima, Osami Sakata, Yoshitaka Nakamura, Takeshi Kanashima, Hiroshi Funakubo, Masanori Okuyama

    APPLIED PHYSICS LETTERS   93 ( 4 )   042907-1-3   2008

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  • Thick epitaxial Pb(Zr0.35,Ti0.65)O3 films grown on (100)CaF2 substrates with polar-axis-orientation

    Takashi Fujisawa, Hiroshi Nakaki, Rikyu Ikariyama, Hitoshi Morioka, Tomoaki Yamada, Keisuke Saito, Hiroshi Funakubo

    Apply. Phy. Express.   1   085001-1-3   2008

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    DOI: 10.1143/APEX.1.085001

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  • In-situ observation of strain accumulation and relaxation in PbTiO3 film during thermal process using Raman spectroscopy

    Ken Nishida, Hiroshi Funakubo, Takashi Yamamoto, Takashi Katoda

    INTEGRATED FERROELECTRICS   99   23 - 30   2008

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  • Novel Highly Volatile MOCVD Precursors for Ta2O5 and Nb2O5 Thin Films

    T. Yotsuya, H. Chiba, T. Furukawa, T. Yamamoto, K. Inaba, K. Tada, T. Suzuki, K. Fujimoto, H. Funakubo, T. Yamakawa, N. Oshima

    PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 6   16 ( 5 )   243 - +   2008

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  • Experimental evidence of strain relaxed domain structure in (100)/(001)-oriented epitaxial lead titanate thick films grown by metalorganic chemical vapor deposition

    Hiroshi Nakaki, Yong Kwan Kim, Shintaro Yokoyama, Rikyu Ikariyama, Hiroshi Funakubo, S.K. Streiffer, Ken Nishida, Keisuke Saito, Alexei Gruverman

    J. Appl. Phys.   104   064121-1 - 6   2008

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    Language:English  

    DOI: 10.1063/1.2981193

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  • “Electrooptic And Piezoelectric Properties Of (Pb,La)(Zr,Ti)O3 Filmswith Various Zr/Ti Ratios”

    Hiromi Shima, Takashi Iijima, Hiroshi Funakubo, Takashi Nakajima, Hiroshi Naganuma, Soichiro Okamura

    Jpn. J. Appl. Phys.   47   7541 - 7544   2008

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    DOI: 10.1143/JJAP.47.7541

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  • “Epitaxial Growth of Fe3Si Thin Films on (100) Magnesia Substrates”

    Kensuke Akiyama, Satoru Kaneko, Teiko Kadowaki, Yasuo Hirabayashi, Azusa Kyoduka, Yutaka Sawada, Yoshihiko Kobayashi, Kichizo Asai, Hiroshi Funakubo

    Mater. Res.Soc.Proc.   1032   1032-I14-10-1 - 1032-I14-10-5.   2008

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  • “X-ray Analysis of Strain Relaxed Domain Structure in (100)/(001)-oriented epitaxial PbTiO3 thick films grown on (100)SrTiO3 substrates”

    Hiroshi Nakaki, Yong Kwan Kim, Shintaro Yokoyama, Rikyu Ikariyama, Hiroshi Funakubo, S. K. Streiffer, Ken Nishida, Keisuke Saito

    Mater. Res.Soc.Proc.   1034   1034-K10-35   2008

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  • Enhancement of ferroelectric and magnetic properties in BiFeO3 films by small amount of cobalt addition

    Hiroshi Naganuma, Nozomi Shimura, Jun Miura, Hiromi Shima, Shintaro Yasui, Ken Nishida, Takashi Katoda, Takashi Iijima, Hiroshi Funakubo, Soichiro Okamura

    J.Appl.Phys.   103   07E314-1-3   2008

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    Language:English  

    DOI: 10.1063/1.2836971

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  • “Epitaxial Growth of Ferromagnetic Iron Silicide Thin Films on Silicon with Yttria-Stabilized Zirconia Buffer Layer”

    Kensuke Akiyama, Satoru Kaneko, Teiko Kadowaki, Yasuo Hirabayashi, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   47 ( 1 )   577-579.   2008

  • “Effect of Strain on Supercell Structure of Bismuth Cuprate Superconducting Film”

    Satoru Kaneko, Kensuke Akiyama, Masahiko Mitsuhashi, Takeshi Ito, Masao Kumagai, Hiroshi Funakubo, Mamoru Yoshimoto

    Jpn. J. Appl. Phys.   47 ( 1 )   664 - 666   2008

  • “In situ gas-phase FTIR monitoring of liquid delivery MOCVD process for PZT film preparation”

    Hiroshi Funakubo, Gouji Asano, Kazuaki Tonari, Yukichi Takamatsu, Kunio Ohtsuki, Tsukasa Satake

    Chemical Engineering Journal,   135   10窶骭€14.   2008

  • “Step coverage study of indium-tin-oxide thin films by spray CVD on non-flat substrates at different temperatures”

    T. Kondo, Yutaka Sawada, Kensuke Akiyama, HIROSHI FUNAKUBO, TAKANORI KIGUCHI, S. Seki, M.H. Wang, T. Uchida

    Thin Solid Films,   516   5864窶骭€5867   2008

  • “In-Plane Rotated Crystal Structure in Continuous Growth of BismuthCuprate Superconducting Film”

    Satoru Kaneko, Kensuke Akiyama, Takeshi Ito, Yasuo Hirabayashi, Hiroshi Funakubo, Mamoru Yoshimoto

    Solid State Phenomena   139   53 - 58   2008

  • “Structural modulation in bismuth cuprate superconducting film with continuous epitaxial growth”

    Satoru Kaneko, Kensuke Akiyama, Takeshi Ito, Yoshitada Shimizu, Yasuo Hirabayashi, Seishiro Ohya, Hiroshi Funakubo, Mamoru Yoshimoto

    J. Crystal Growth,   310   1713 - 1717   2008

  • “Temperature Dependency of Dielectric Properties in Epitaxially Grown SrBi4Ti4O15 Films with Different Orientation”

    HIROSHI FUNAKUBO, Muneyasu Suzuki, Kenji Takahashi, Takayuki Watanabe

    Key Engineering Materials   368-372   1811 - 1813   2008

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  • “Preparation of (111)-Oriented SrRuO3/Pt Electrodes for Pb(Zr,Ti)O3-Based Ferroelectric Capacitors:Grain Size and Roughness Impact”

    Nicolas Menou, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   47 ( 2 )   1003 - 1007   2008

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    DOI: 10.1143/JJAP.47.1003

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  • Cubic-on-cubic growth of a MgO(001) thin film prepared on Si(001) substrate at low ambient pressure by the sputtering method

    S. Kaneko, H. Funakubo, T. Kadowaki, Y. Hirabayashi, K. Akiyama

    EPL   81 ( 4 )   46001-1-5   2008

  • Proposal of Research method for novel piezoelectric materials using epitaxial films

    Funakubo Hiroshi, Morioka Hitoshi, Saito Keisuke, Uchida Hiroshi, Yasui Shintaro, Nakajima Mitsumasa, Naganuma Hiroshi, Okamura Souitirou, Nishida Ken, Yamamoto Takashi, Iijima Takashi, Azuma Masaki

    Preprints of Annual Meeting of The Ceramic Society of Japan<br>Preprints of Fall Meeting of The Ceramic Society of Japan   2008 ( 0 )   431 - 431   2008

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    非鉛圧電体の探索、特にMPB探索は電子セラミックスの急務な課題である。これまでの研究で探索できなかった新材料を探索する方法として、我々はエピタキシャル薄膜を用いた探索方法を提案する。この方法は従来の焼結体を用いる方法と比較して、_丸1_高圧相のような従来まったく検討されていない組成系を探索できる、_丸2_焼結密度に左右されないで評価できる、_丸3_大きな電界を印加した評価が容易である、_丸4_結晶方位依存性の探索が容易できるといった利点がある。反面、_丸1_基板からの拘束による構成相の変化といった懸念点がある。本発表ではれらに関して、実例を照会しながら紹介する。

    DOI: 10.14853/pcersj.2008F.0.431.0

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  • “Crystal Structure and Electrical Properties of {100}-Oriented Epitaxial BiCoO3-BiFeO3 Films Grown By Metalorganic Chemical Vapor Deposition”

    Shintaro Yasui, Hiroshi Naganuma, Soichiro Okamura, Ken Nishida, Takashi Yamamoto, Takashi Iijima, Masaki Azuma, Hitoshi Morioka, Keisuke Saito, Mutsuo Ishikawa, Tomoaki Yamada, Hiroshi Funakubo

    Jpn. J. Appl. Phys.,   47   7582 - 7585   2008

  • X-ray diffraction study of polycrystalline BiFe O3 thin films under electric field

    Seiji Nakashima, Osami Sakata, Yoshitaka Nakamura, Takeshi Kanashima, Hiroshi Funakubo, Masanori Okuyama

    Applied Physics Letters   93 ( 4 )   042907-1-3   2008

  • “Supercell Structure on Continuous Growth of Bi2Sr2Ca1Cu2Ox Film”

    Satoru KANEKO, Kensuke AKIYAMA, Takeshi ITO, Yasuo HIRABAYASHI, Hiroshi FUNAKUBO, Mamoru YOSHIMOTO

    J. J. Appl. Phys.   47 ( 7 )   5602 - 5604   2008

  • “In-situ observation of strain accumulation and relaxation in PbTiO3 film during thermal process using Raman spectroscopy”

    Ken Nishida, Hiroshi Funakubo, Takashi Yamamoto, Takashi Katoda

    Integ. Ferro.   99   23 - 30   2008

  • “Novel Highly Volatile MOCVD Precursors for Ta2O5 and Nb2O5 Thin Films”

    T. Yotsuya, H. Chiba, T. Furukawa, T. Yamamoto, K. Inaba, K. Tada, T. Suzuki, K. Fujimoto, H. Funakubo, T. Yamakawa, N. Oshima

    ECS Transactions, 16   16 ( 5 )   243 - 251   2008

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    DOI: 10.1149/1.2981607

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  • “Raman Spectroscopy Study of Oxygen Vacancies in PbTiO3 Thin Films Generated Heat-treated in Hydrogen Atmosphere”

    Ken Nishida, Minoru Osada, Hironari Takeuchi, Yoshiaki Ishimoto, Joe Sakai, Nobuaki Ito, Rikyu Ikariyama, Takafumi Kamo, Takashi Fujisawa, Hiroshi Funakubo, Takashi Kotoda, Takashi Yamamoto

    Jpn. J. Appl. Phys.   47   7510 - 7513   2008

  • “Langmuir-Blodgett Fabrication of Nanosheet-Based Dielectric Films without an Interfacial Dead Layer”

    Minoru Osada, Kosho Akatsuka, Yasuo Ebina, Yoshinori Kotani, Kanta Ono, Hiroshi Funakubo, Shigenori Ueda, Keisuke Kobayashi, Kazunori Takada, Takayoshi Sasaki

    Jpn. J. Appl. Phys.   47   7556 - 7560   2008

  • “Annealing Temperature Dependences of Ferroelectric and Magnetic Propertiesin Polycrystalline Co-Substituted BiFeO3 Films”

    Hiroshi Naganuma, Jun Miura, Mitsumasa Nakajima, Hiromi Shima, Soichiro Okamura, Shintaro Yasui, Hiroshi Funakubo, Ken Nishida, Takashi Iijima, Masaki Azuma, Yasuo Ando, Kenji Kamishima, Koichi Kakizaki, Nobuyuki Hiratsuka

    Jpn. J. Appl. Phys.   47   7574 - 7578   2008

  • “Epitaxial Growth of Fe3Si Thin Films on (100) Magnesia Substrates”

    Kensuke Akiyama, Satoru Kaneko, Teiko Kadowaki, Yasuo Hirabayashi, Azusa Kyoduka, Yutaka Sawada, Yoshihiko Kobayashi, Kichizo Asai, Hiroshi Funakubo

    Mater. Res.Soc.Proc.   1032   1032-I14-10-1 - 1032-I14-10-5.   2008

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  • “X-ray Analysis of Strain Relaxed Domain Structure in (100)/(001)-oriented epitaxial PbTiO3 thick films grown on (100)SrTiO3 substrates”

    Hiroshi Nakaki, Yong Kwan Kim, Shintaro Yokoyama, Rikyu Ikariyama, Hiroshi Funakubo, S. K. Streiffer, Ken Nishida, Keisuke Saito

    Mater. Res.Soc.Proc.   1034   1034-K10-35   2008

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  • スプレーCVD 法で作製したスズ添加酸化インジウム透明導電膜の成長メカニズム

    舟窪 浩, 澤田 豊

    3 ( 1 )   14 - 17   2008

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  • Tin Oxide Thin Films Deposited by Spray CVD Using Ethanol Solution of Tin (II) Chloride

    Takeshi Kondo, Hiroshi Funakubo, Kensuke Akiyama, Meihan Wang, Takayuki Uchida, Yutaka Sawada

    Trans. Mater. Soc. Jpn.   33 ( 4 )   1363 - 1366   2008

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  • Effect of the Annealing Temperature on Dielectric Properties of Bi_<1.5>Zn_<1.0>Nb_<1.5>O_7 Films Prepared by MOCVD Reviewed

    舟窪 浩

    Key Eng. Mater. (掲載決定)   2008

  • Strain-stability of dielectric property in Bi-Zn-Nb-O films Reviewed

    舟窪 浩

    Appl. Phys. Lett. (掲載決定)   2008

  • Temperature dependence of piezoelectric displacement measured with twin laser interferometer

    Lee Bong Yeon, Iijima Takashi, Watanabe Takayuki, Saito Hiroshi, Matsuda Takanori, Ifuku Toshihiro, Funakubo Hiroshi, Yu Houzhona, Kumada Nobuhiro

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2008F   287 - 287   2008

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    DOI: 10.14853/pcersj.2008f.0.287.0

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  • Evaluation of Electrical Properties of Leaky Lead-free Piezoelectric films by PUND Measurement

    Okamura Soichiro, Naganuma Hiroshi, Nakajima Takashi, Shima Hiromi, Shimura Nozomi, Funakubo Hiroshi, Iijima Takashi, Inoue Yosuke

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2008F   437 - 437   2008

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    Electrical properties of leaky piezoelectric BiFeO3 thin films were evaluated by high-speed Positive-Up-Negative-Down (PUND) measurement. Leakage current density was estimated from the inclination of the pulse response during a constant electric field was applied. Relative permittivity was estimated from the abrupt decrement when an applied field was removed. Twofold remanent polarization without the influence of leakage current was estimated by subtracting the contribution of paraelectric component from the abrupt increment in the pulse response when the positive pulse was applied.

    DOI: 10.14853/pcersj.2008f.0.437.0

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  • Ferroelectric phase transition and dielectric properties of strained epitaxial SrTiO3 films

    Yamada Tomoaki, Funakubo Hiroshi, Kimura Shigeru, Ohsumi Hiroyuki, Taganstev Alexander, Setter Nava

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2008F   112 - 112   2008

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    DOI: 10.14853/pcersj.2008f.0.112.0

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  • Growth of Tetragonal PZT Thick Films with Perfecly Polar axis Orientation

    Funakubo Hiroshi, Fujisawa Takashi, Nakaki Hiroshi, Ikariyama Rikyu, Saito Keisuke, Morioka Hitoshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2008S   1C31L - 1C31L   2008

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    To make clear the original characteristics of Pb(Zr,Ti)O3, PZT, single crystalline thick films around 4 m in thickness were grown using the strain from the substrates. This is useful to make clear the piezoelectric properties of PZT itself, but also for the practical applications, using these as seed crystals.

    DOI: 10.14853/pcersj.2008s.0.1c31l.0

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  • Self-assembled growth of tunable BaTiO3-CeO2 oriented nanocomposite films and their giant dielectric nonlinearity

    Yamada Tomoaki, Sandu Cosmin, Gureev Maxim, Tagantsev Alexander, Setter Nava, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2008S   2P028 - 2P028   2008

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    DOI: 10.14853/pcersj.2008s.0.2p028.0

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  • Synthesis and evaluation of solid-solution powders in Ba-Cu-Mg-Nb-O system prepared by chemical solution technique

    Yazawa Keisuke, Nakajima Mitsumasa, Funakubo Hiroshi, Wada Satoshi, Kumada Nobuhiro, Azuma Masaki, Okamura Souichiro, Nishida Ken, Yamamoto Takashi, Iijima Takashi, cancel cancel, Uchida Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2008F   288 - 288   2008

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    DOI: 10.14853/pcersj.2008f.0.288.0

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  • MPB investigation in tungsten bronze-type piezoelectric materials

    Watanabe Takayuki, Saito Hiroshi, Matsuda Takanori, Ifuku Toshihiro, Lee Bong-Yeon, Iijima Takashi, Funakubo Hiroshi, Yu Houzhona, Kumada Nobuhiro

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2008F   436 - 436   2008

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    DOI: 10.14853/pcersj.2008f.0.436.0

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  • (111)-oriented Pb(Zr,Ti)O(3) films deposited on SrRuO(3)/Pt electrodes: Reproducible preparation by metal organic chemical vapor deposition, top electrode influence, and reliability

    Nicolas Menou, Hiroshi Funakubo

    JOURNAL OF APPLIED PHYSICS   102 ( 11 )   114105-1-5.   2007.12

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  • Structural characterization by electronic transport properties on Fe3Si films

    Y. Kobayashi, T. Kaneko, M. Kamogawa, K. Asai, K. Akiyama, H. Funakubo

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   40 ( 22 )   6873 - 6878   2007.11

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  • Evaluation of residual strain and oxygen vacancy in multilayer ceramic. capacitor using laser Raman spectroscopy

    Ken Nishida, Hiroshi Kishi, Hiroshi Funakubo, Hironari Takeuchi, Takashi Katoda, Takashi Yamamoto

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 10B )   7005 - 7007   2007.10

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  • RF magnetron sputtering growth of epitaxial SrRuO3 films with high conductivity

    Takafumi Kamo, Ken Nishida, Kensuke Akiyama, Joe Sakai, Takashi Katoda, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 10B )   6987 - 6990   2007.10

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  • Solution-based fabrication of high-kappa dielectric nanofilms using titania nanosheets as a building block

    Minoru Osada, Kosho Akatsuka, Yasuo Ebina, Hiroshi Funakubo, Takanori Kiguchi, Kazunori Takada, Takayoshi Sasaki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 10B )   6979 - 6983   2007.10

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  • Satellite peaks amplified by modulation in bismuth cuprate thin film

    S. Kaneko, K. Akiyama, T. Ito, Y. Hirabayashi, K. Seo, H. Funakubo, M. Yoshimoto

    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   463 ( No. )   935 - 938   2007.10

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  • Crystal structure analysis of epitaxial BiFeO3-BiCoO3 solid solution films grown by metalorganic chemical vapor deposition

    Shintaro Yasui, Ken Nishida, Hiroshi Naganuma, Soichiro Okamura, Takashi Iijima, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 10B )   6948 - 6951   2007.10

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  • Strain-relaxed structure in (001)(100)-oriented epitaxial PbTiO3 films grown on (100) SrTiO3 substrates by metal organic chemical vapor deposition

    Hiroshi Nakaki, Yong Kwan Kim, Shintaro Yokoyama, Rikyu Ikariyama, Hiroshi Funakubo, Ken Nishida, Keisuke Saito

    APPLIED PHYSICS LETTERS   91 ( 11 )   112904-1-3.   2007.9

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  • Effect of source materials on film thickness and compositional uniformity of MOCVD-P(Zr,Ti)O-3 films

    Hiroshi Funakubo, Atsushi Nagai, Gouji Asano, June-Mo Koo, Sang-Min Shin, Youngsoo Park

    SURFACE & COATINGS TECHNOLOGY   201 ( 22-23 )   9279 - 9284   2007.9

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  • β-FeSi2 growth on Cu-mediated Si substrate and enhancement of photoluminescence

    Kensuke Akiyama, Masaru Itakura, Satoru Kaneko, Hiroshi Funakubo, Yoshihito Maeda

    Thin Solid Films   515 ( 22 )   8144 - 8148   2007.8

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  • beta-FeSi2 growth on Cu-mediated Si substrate and enhancement of photoluminescence

    Kensuke Akiyama, Masaru Itakura, Satoru Kaneko, Hiroshi Funakubo, Yoshihito Maeda

    THIN SOLID FILMS   515 ( 22 )   8144 - 8148   2007.8

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  • 1.54 mu m photoluminescence from beta-FeSi2 as-deposited film

    Kensuke Akiyama, Satoru Kaneko, Hiroshi Funakubo, Masaru Itakura

    APPLIED PHYSICS LETTERS   91 ( 7 )   071903-1-3.   2007.8

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  • Analysis for crystal structure of Bi(Fe,Sc)O-3 thin films and their electrical properties

    Shintaro Yasui, Hiroshi Uchida, Hiroshi Nakaki, Ken Nishida, Hiroshi Funakubo, Seiichiro Koda

    APPLIED PHYSICS LETTERS   91 ( 2 )   022906-1-3.   2007.7

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  • Enhancement of field-induced strain by La substitution in epitaxial Pb(Zr,Ti)O-3 films grown by metal organic chemical vapor deposition

    Ken Nishida, Yoshihisa Honda, Shintaro Yokoyama, Hiroshi Funakubo, Takashi Yamamoto, Keisuke Saito, Takashi Katoda

    APPLIED PHYSICS LETTERS   90 ( 26 )   262902-1-3.   2007.6

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  • Oxygen content and magnetic properties of SrRuO3-delta thin films

    Joe Sakai, Nobuaki Ito, Shin-Ichi Ito, Kenji Takahashi, Hiroshi Funakubo

    IEEE TRANSACTIONS ON MAGNETICS   43 ( 6 )   3073 - 3075   2007.6

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  • (111)-textured Mn-substituted BiFeO3 thin films on SrRuO3/Pt/Ti/SiO2/Si structures

    S. K. Singh, N. Menou, H. Funakubo, K. Maruyama, H. Ishiwara

    APPLIED PHYSICS LETTERS   90 ( 24 )   242914-1-3.   2007.6

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  • Crystal structure and microstructure of epitaxial Pb(Zr,Ti)O-3 films consisting of mixed phases with tetragonal and rhombohedral symmetries grown on (100)(c)SrRuO3//(100)SrTiO3 substrate by metalorganic chemical vapor deposition

    Shintaro Yokoyama, Hitoshi Morioka, Yong Kwan Kim, Hiroshi Nakaki, Hiroshi Funakubo, Keisuke Saito, Ken Nishida, Takashi Katoda

    JOURNAL OF MATERIALS RESEARCH   22 ( 6 )   1551 - 1557   2007.6

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  • Characterization of zinc-modified lithium tantalate thin films fabricated by chemical solution deposition method

    Hiroshi Uchida, Katsumi Onofuji, Hiroshi Funakubo, Seiichiro Koda

    JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY   42 ( 3 )   265 - 269   2007.6

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  • Effect of oxygen annealing on ferroelectricity of BiFeO3 thin films formed by pulsed laser deposition

    Hyun-young Go, Naoki Wakiya, Hiroshi Funakubo, Keisuke Satoh, Masao Kondo, Jeffrey S. Cross, Kenji Maruyama, Nobuyasu Mizutani, Kazuo Shinozaki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 6A )   3491 - 3494   2007.6

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  • Strain and in-plane orientation effects on the ferroelectricity of (111)-oriented tetragonal Pb(Zr0.35Ti0.65)O-3 thin films prepared by metal organic chemical vapor deposition

    Hiroki Kuwabara, Nicolas Menou, Hiroshi Funakubo

    APPLIED PHYSICS LETTERS   90 ( 22 )   222901-1-3.   2007.5

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  • Effect of the thermal expansion matching on the dielectric tunability of (100)-one-axis-oriented (Ba0.5Sr0.5)TiO3 thin films Reviewed

    Shinichi Ito, Hiroshi Funakubo, Ivoyl P. Koutsaroff, Marina Zelner, Andrew Cervin-Lawry

    APPLIED PHYSICS LETTERS   90 ( 14 )   142910-1-3   2007.4

  • Impact of (111)-oriented SrRuO3/Pt tailored electrode for highly reproducible preparation of metal organic chemical vapour deposited Pb(Zr,Ti)O-3 films for high density ferroelectric random access memory applications

    Nicolas Menou, Hiroki Kuwabara, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 4B )   2139 - 2142   2007.4

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  • Novel Dielectric Characteristics of Bismuth Layered Dielectrics Along Nanolayer Stack Direction

    FUNAKUBO Hiroshi

    Ceramics Japan   42 ( 3 )   169 - 174   2007.3

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  • Probing intrinsic polarization properties in bismuth-layered ferroelectric films

    Takayuki Watanabe, Hiroshi Funakubo, Minoru Osada, Hiroshi Uchida, Isao Okada, Brian J. Rodriguez, Alexei Gruverman

    APPLIED PHYSICS LETTERS   90 ( 11 )   112914-1-1-3   2007.3

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  • Domain structures in highly (100)-oriented epitaxial Pb(Zr-0.35,Ti-0.65)O-3 thin films

    Yong Kwan Kim, Hitoshi Morioka, Hiroshi Funakubo

    JOURNAL OF APPLIED PHYSICS   101 ( 6 )   064112   2007.3

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  • Single-phase Pb(Zn1/3Nb2/3)O-3 thin films grown by metalorganic chemical vapor deposition: Effects of growth sequence and substrates

    Ken Nishida, Shintaro Yokoyama, Satoshi Okamoto, Keisuke Saito, Hiroshi Uchida, Seiichiro Koda, Takashi Katoda, Hiroshi Funakubo

    JOURNAL OF CRYSTAL GROWTH   298 ( No. )   495 - 499   2007.1

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  • 圧電応用を目指した一軸配向Biペロブスカイト酸化物厚膜のMOCVD法作製とその特性評価

    安井伸太郎, 永沼博, 岡村総一郎, 飯島高志, 西田謙, 舟窪浩

    応用物理学関係連合講演会講演予稿集   54th ( 2 )   2007

  • “La Content Dependence of Piezoelectric Properties of Polycrystalline (Pb, La(Zr0.65, Ti0.35)O3 Films”

    H.Shima, Hiroshi Naganuma, Takashi Iijima, HIROSHI FUNAKUBO, Shouji Okamura

    Transactions of the Materials Research of Japan,   32 ( 1 )   79-82.   2007

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  • Low-temperature preparation of metallic ruthenium films by MOCVD using bis(2,4-dimethylpentadienyl)ruthenium

    Kazuhisa Kawano, Hiroaki Kosuge, Noriaki Oshima, Hiroshi Funakubo

    ELECTROCHEMICAL AND SOLID STATE LETTERS   10 ( 6 )   D60 - D62   2007

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  • Crystal Growth of β-FeSi2 Thin Film on (100), (110) and (111) Plane of Si and Yittria-Stabilized Zirconia Substrates”

    Kensuke Akiyama, Satoru Kaneko, Takanori Kiguchi, Takashi Suemasu, Takeshi Kimura, Hiroshi Funakubo

    Mater. Res. Soc. Symp. Proc.   980   0980-II05-47   2007

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  • The Influence of Acceptor Doping on the Structure and Electrical Properties of Sol-Gel Derived BiFeO3 Thin Films

    K. Brinkman, T. Iijima, K. Nishida, T. Katoda, H. Funakubo

    Ferroelectrics, 357   357   35窶骭€40   2007

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    DOI: 10.1080/00150190701527597

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  • Structural characterization by electronic transport properties on Fe3Si films

    Y Kobayashi, T Kaneko, M Kamogawa, K Asai, Kensuke Akiyama, HIROSHI FUNAKUBO

    J. Phys. D: Appl. Phys.   40 ( No. )   6873窶骭€6878.   2007

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    DOI: 10.1088/0022-3727/40/22/003

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  • “Crystal Structure Analysis of Epitaxial BiFeO3窶釘iCoO3 Solid Solution Films Grown by Metalorganic Chemical Vapor Deposition”

    Shintaro Yasui, Ken Nishida, Hiroshi Naganuma, Soichiro Okamura, Takashi Iijima, Hiroshi Funakubo

    Jpn. J. Appl. Phys   46 ( 10B )   6948 - 6951   2007

  • Bottom electrodes dependence of ferroelectric properties in epitaxial BiFeO3/SrRuO3/SrTiO3 structures

    S. K. Singh, Y. K. Kim, H. Kuwabara, H. Funakubo, H. Ishiwara

    INTEGRATED FERROELECTRICS   87 ( No. )   42 - +   2007

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  • (111)-Oriented SrRuO_3/Pt Bottom Electrode for Reproducible Preparation of Metal Organic Chemical Vapour Deposited Pb(Zr,Ti)O_3 Films for High Density Ferroelectric Random Access Memories

    MENOU Nicolas, KUWABARA Hiroki, FUNAKUBO Hiroshi

    IEICE technical report   106 ( 593 )   21 - 26   2007

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    Ferroelectric memories (FeRAM) are used in the microelectronic industry since they provide non volatility, high speed and low power consumption. Actual technologies are mainly based on Pb(Zr,Ti)O_3 ("so-called PZT") which ensures a high remnant polarization and a low coercive field. Nevertheless, the development of next generation PZT-based FeRAM requires the preparation of highly reliable ferroelectric capacitors which combine good electric properties with good resistance to reliability issues (fatigue, imprint and retention). In the present paper we report a comparative study of the structural, morphologic, and electric properties of Pb(Zr,Ti)O_3 films, deposited by pulsed metal-organic chemical vapour deposition (MOCVD), on different (111)-oriented bottom-electrode stacks (SrRuO_3/Pt, Pt, and Ir substrates). The Pb input ratio in the MOCVD chamber was systematically modified for each deposition run to obtain PZT films with various compositions within the Pb process window. Our results clearly demonstrate that only PZT films deposited on SrRuO_3 show high quality and reproducible properties throughout the process window, i.e., high (111) texture, low roughness (<4 nm), high Pr (〜40μC/cm^2), and low V_c (<1 V). This study provides further evidence that SrRuO_3/Pt substrates are good candidates for integration in next-generation high-density FeRAM.

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  • “Single-phase Pb(Zn1/3Nb2/3)O3 thin .lms grown by metalorganic chemical vapor deposition: Effects of growth sequence and substrates”

    HIROSHI FUNAKUBO, Ken Nishida, Shintaro Yokoyama, Satoshi Okamoto, Keisuke Saito, Hiroshi Uchida, Seiichiro Koda, Takashi Katoda

    Journal of Crystal Growth   298   495 - 499   2007

  • Fabrication of ZnO Microstructures by AnisotropicWet-Chemical Etching

    Naoki OHASHI, Kenji Takahashi, HIROSHI FUNAKUBO

    Journal of The Electrochemical Society   154 ( 2 )   D82-D87   2007

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  • The influence of acceptor doping on the structure and electrical properties of sol-gel derived BiFeO3 thin films

    K. Brinkman, T. Iijima, K. Nishida, T. Katoda, H. Funakubo

    FERROELECTRICS   357   35 - 40   2007

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  • Effect of Oxygen Annealing on Ferrroelectricity of BiFeO_3_ Thin Films formed by Pulsed Laser Deposition

    Hyun-young Go, Naoki Wakiya, Hiroshi Funakubo, Keisuke Satoh, Masao Kondo, Jeffrey Scott Cross, Kenji Maruyama, Nobuyasu Mizutani, Kazuo Shinozaki

    Jpn. J. Appl. Phys.   46 ( 6A )   3491 - 3494   2007

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    DOI: 10.1143/JJAP.46.3491

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  • “La Content Dependence of Piezoelectric Properties of Polycrystalline (Pb, La(Zr0.65, Ti0.35)O3 Films”

    H.Shima, Hiroshi Naganuma, Takashi Iijima, HIROSHI FUNAKUBO, Shouji Okamura

    Transactions of the Materials Research of Japan,   32 ( 1 )   79-82.   2007

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  • “Enhancement of field-induced strain by La substitution in epitaxial Pb(Zr,Ti)O3 films grown by metal organic chemical vapor deposition”

    Ken Nishida, Yoshihisa Honda, Shintaro Yokoyama, Hiroshi Funakubo, Takashi Yamamoto, Keisuke Saito, Takashi Katoda

    Appl. Phys. Lett.   90   262902-1-3.   2007

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  • “(111)-textured Mn-substituted BiFeO3 thin films on SrRuO3 /Pt/Ti/SiO2/Si structures”

    kumar singh_sushil, Nicolas Menou, HIROSHI FUNAKUBO, K. Maruyama, HIROSHI ISHIWARA

    Appl. Phys. Lett.   90   242914-1-3.   2007

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  • “Strain and in-plane orientation effects on the ferroelectricity of (111)-oriented tetragonal Pb(Zr0.35Ti0.65)O3 thin films prepared by metal organic chemical vapor deposition”

    Hiroki Kuwabara, Nicolas Menou, Hiroshi Funakubo

    Appl. Phys. Lett.   90   222901-1-3.   2007

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  • “Crystal structure and microstructure of epitaxial Pb(Zr,Ti)O3 films consisting of mixed phases with tetragonal and rhombohedral symmetries grown on (100)cSrRuO3//(100)SrTiO3 substrate by metalorganic chemical vapor deposition”

    Shintaro Yokoyama, Hitoshi Morioka, Yong Kwan Kim, Hiroshi Nakaki, Hiroshi Funakubo, Keisuke Saito, Ken Nishida, Takashi Katoda

    J. Mater. Res.   22 ( 6 )   1551-1557.   2007

  • “Low-Temperature Preparation of Metallic Ruthenium Films by MOCVD Using Bis(2,4-dimethylpentadienyl)ruthenium”

    Kazuhisa Kawano, Hiroaki Kosuge, Noriaki Oshima, Hiroshi Funakubo

    Electrochem. Solid-State Lett.   10 ( 6 )   D60-D62   2007

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  • “Effect of the thermal expansion matching on the dielectric tenability of (100)-one-axis-oriented (Ba0.5Sr0.5)TiO3 thin films”,

    Shinichi Ito, Hiroshi Funakubo, Ivoyl P. Koutsaroff, Marina Zelner, Andrew Cervin-Lawry

    Appl. Phys. Lett.   90 ( No. )   142910-1-3   2007

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    DOI: 10.1063/1.2719621

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  • Crystal Growth of β-FeSi2 Thin Film on (100), (110) and (111) Plane of Si and Yittria-Stabilized Zirconia Substrates”

    Kensuke Akiyama, Satoru Kaneko, Takanori Kiguchi, Takashi Suemasu, Takeshi Kimura, Hiroshi Funakubo

    Mater. Res. Soc. Symp. Proc.   980 ( No. )   0980-II05-47   2007

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  • “Domain structures in highly (100)-oriented epitaxial Pb(Zr0.35,Ti0.65)O3 thin films”

    Yong Kwan Kim, Hitoshi Morioka, Hiroshi Funakubo

    J. Appl. Phys.   101   064112   2007

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  • “Impact of (111)-Oriented SrRuO3/Pt Tailored Electrode for Highly Reproducible Preparation of Metal Organic Chemical Vapour Deposited Pb(Zr,Ti)O3 Films for High Density Ferroelectric Random Access Memory Applications”,

    Nicolas Menou, Hiroki Kuwabara, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   46 ( 4B )   2139-2142.   2007

  • “Characterization of zinc-modified lithium tantalate thin films fabricated by chemical solution deposition method”

    Hiroshi Uchida, Katsumi Onofuji, Hiroshi Funakubo, Seiichiro Koda

    J Sol-Gel Sci Techn,   42   265窶骭€269.   2007

  • “Strain-relaxed structure in (001)/(100)-oriented epitaxial PbTiO3 films grown on (100) SrTiO3 substrates by metal organic chemical vapor deposition”

    Hiroshi Nakaki, Yong Kwan Kim, Shintaro Yokoyama, Rikyu Ikariyama, Hiroshi Funakubo, Ken Nishida, Keisuke Saito

    Appl. Phys. Lett.   91   112904-1-3.   2007

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  • “Satellite peaks amplified by modulation in bismuth cuprate thin film”

    Satoru Kaneko, Kensuke Akiyama, T. Ito, Y. Hirabayashi, K. Seo, HIROSHI FUNAKUBO, MAMORU YOSHIMOTO

    Physica C,   463-465   935 - 938   2007

  • “(111)-oriented Pb(Zr,Ti)O3 films deposited on SrRuO3/Pt electrodes: Reproducible preparation by metal organic chemical vapor deposition, top electrode influence, and reliability”

    Nicolas Menou, Hiroshi Funakubo

    J. Appl. Phys.   102   114105-1-5.   2007

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  • “Evaluation of Residual Strain and Oxygen Vacancy in Multilayer Ceramic Capacitor Using Laser Raman Spectroscopy”

    Ken Nishida, Hiroshi Kishi, Hiroshi Funakubo, Hironari Takeuchi, Takashi Katoda, Takashi Yamamoto

    Jpn. J. Appl. Phys.   46 ( 10B )   7005 - 7007   2007

  • “RF Magnetron Sputtering Growth of Epitaxial SrRuO3 Films with High Conductivity”

    Takafumi Kamo, Ken Nishida, Kensuke Akiyama, Joe Sakai, Takashi Katoda, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   46 ( 10B )   6987-6990.   2007

  • “Solution-Based Fabrication of High-κ Dielectric Nanofilms Using Titania Nanosheets as a Building Block”

    Minoru Osada, Kosho Akatsuka, Yasuo Ebina, Hiroshi Funakubo, Takanori Kiguchi, Kazunori Takada, Takayoshi Sasaki

    Jpn. J. Appl. Phys.   46 ( 10B )   6979-6983.   2007

  • “Effect of source materials on film thickness and compositional uniformity of MOCVD-P(Zr,Ti)O3 films”

    Hiroshi Funakubo, Atsushi Nagai, Gouji Asano, June-Mo Koo, Sang-Min Shin, Youngsoo Park

    Surface & Coatings Technology,   201   9279窶骭€9284   2007

  • “Bottom Electrodes Dependence of Ferroelectric Properties in Epitaxial BiFeO3/SrRuO3/SrTiO3 Structures”

    S.K.Sungh, Yong Kwan Kim, H.Kuwabara, HIROSHI FUNAKUBO, HIROSHI ISHIWARA

    Integrated Ferroelectrics,   87   42窶骭€49   2007

  • “Analysis for crystal structure of Bi(Fe,Sc)O3 thin films and their electrical properties”

    Shintaro Yasui, Hiroshi Uchida, Hiroshi Nakaki, Ken Nishida, Hiroshi Funakubo, Seiichiro Koda

    Appl. Phys. Lett.   91   022906-1-3.   2007

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  • “Oxygen Content and Magnetic Properties of SrRuO3-δ Thin Films”

    Joe Sakai, Nobuaki Ito, ShinIchi Ito, Kenji Takahashi, Hiroshi Funakubo

    IEEE Transactions on Magnetics,   43 ( 6 )   3073-3075.   2007

  • “1.54 μm photoluminescence from ・「-FeSi2 as-deposited film”

    Kensuke Akiyama, Satoru Kaneko, Hiroshi Funakubo, Masaru Itakura

    Appl. Phys. Lett.   91   071903-1-3.   2007

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  • Ferroelectric properties of Bi(FexCo1-x)O3

    Shimura Nozomi, Naganuma Hiroshi, Shima Hiromi, Yasui Shintaro, Nishida Ken, Ijima Takashi, Funakubo Hiroshi, Okamura Soichiro

    Preprints of Annual Meeting of The Ceramic Society of Japan<br>Preprints of Fall Meeting of The Ceramic Society of Japan   2007 ( 0 )   304 - 304   2007

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    Finding a novel lead-free piezoelectric and ferroelectric material is important issue because the lead will be prohibited to use in electronic devices in near future. Our aim in the present study is to investigate the morphotropic phase boundary [MPB] in the BiFeO&lt;SUB&gt;3&lt;/SUB&gt;-BiCoO&lt;SUB&gt;3&lt;/SUB&gt; solid solution films. The XRD patterns of the BiFeO&lt;SUB&gt;3&lt;/SUB&gt;-BiCoO&lt;SUB&gt;3&lt;/SUB&gt; solid solution films showed the complicated structural change with changing the composition, which indicates the possibility of the MPB in the BiFeO&lt;SUB&gt;3&lt;/SUB&gt;-BiCoO&lt;SUB&gt;3&lt;/SUB&gt; solid solution. We will also discuss the ferroelectric properties.

    DOI: 10.14853/pcersj.2007S.0.304.0

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  • Bi(COxFe1-x)O3薄膜の構造,強誘電性および磁気特性

    三浦淳, 永沼博, 志村希, 島宏美, 安井伸太郎, 西田謙, 河東田隆, 舟窪浩, 飯島高志, 岡村総一郎

    日本応用磁気学会学術講演概要集   31st   2007

  • Fabrication of ZnO microstructures by anisotropic wet-chemical etching

    Naoki Ohashi, Kenji Takahashi, Shunichi Hishita, Isao Sakaguchi, Hiroshi Funakubo, Hajime Haneda

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY   154 ( 2 )   D82 - D87   2007

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  • “Probing intrinsic polarization properties in bismuth-layered ferroelectric films”

    Takayuki Watanabe, Hiroshi Funakubo, Minoru Osada, Hiroshi Uchida, Isao Okada, Brian J. Rodriguez, Alexei Gruverman

    Appl. Phys. Lett.   90   112914-1-1-3   2007

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  • “(111)-Oriented SrRuO3/Pt Bottom Electrode for Reproducible Preparation of Metal Organic Chemical Vapor Dposited Pb(Zr, Ti)O3 Films for High Density Ferroclectric Random Access Memories”,

    Nicolas Menou, Hiroki Kuwabara, Hiroshi Funakubo

    IEICE Technical Report   106 ( 593 )   21 - 26   2007

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    Ferroelectric memories (FeRAM) are used in the microelectronic industry since they provide non volatility, high speed and low power consumption. Actual technologies are mainly based on Pb(Zr,Ti)O_3 ("so-called PZT") which ensures a high remnant polarization and a low coercive field. Nevertheless, the development of next generation PZT-based FeRAM requires the preparation of highly reliable ferroelectric capacitors which combine good electric properties with good resistance to reliability issues (fatigue, imprint and retention). In the present paper we report a comparative study of the structural, morphologic, and electric properties of Pb(Zr,Ti)O_3 films, deposited by pulsed metal-organic chemical vapour deposition (MOCVD), on different (111)-oriented bottom-electrode stacks (SrRuO_3/Pt, Pt, and Ir substrates). The Pb input ratio in the MOCVD chamber was systematically modified for each deposition run to obtain PZT films with various compositions within the Pb process window. Our results clearly demonstrate that only PZT films deposited on SrRuO_3 show high quality and reproducible properties throughout the process window, i.e., high (111) texture, low roughness (<4 nm), high Pr (〜40μC/cm^2), and low V_c (<1 V). This study provides further evidence that SrRuO_3/Pt substrates are good candidates for integration in next-generation high-density FeRAM.

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  • 酸化物薄mlの界面研究の進展・実N化への観点からみた進展

    舟窪 浩, 坂田 修身

    セラミックデータベース 35   47 - 52   2007

  • Novel Domain Structure of Epitaxially Grown (100)/(001)PbTiO3 Thick Films

    Funakubo Hiroshi, Nakaki Hiroshi, Ikariyama Rikyu, Kim Yong-Kwan, Yokoyama Shintaro, Nishida Ken, Saitoh keisuke

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2007S   7 - 7   2007

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    DOI: 10.14853/pcersj.2007s.0.7.0

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  • 18aPS-45 Transport properties of Fe_3Si

    Kaneko T., Kamogawa M., Kobayashi Y., Akiyama K., Funakubo H., Asai K.

    Meeting Abstracts of the Physical Society of Japan   62.1.3   412   2007

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    DOI: 10.11316/jpsgaiyo.62.1.3.0_412_2

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  • Electrooptic Properties of La-substituted Pb(Zr,Ti)O3 Films and Their La-substituted Sites

    Shima Hiromi, Nishida Ken, Funakubo Hiroshi, Iijima Takashi, Katoda Takashi, Naganuma Hiroshi, Okamura Soichiro

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2007S   172 - 172   2007

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    The electrooptic properties and the site occupancies of La ions in La-substituted Pb(Zr0.65,Ti0.35)O3 films, hereafter La-PZT films, were investigated. The La-PZT films with La-contents ranging from 0 to 12% were prepared on (111)Pt/Ti/SiO2/(100)Si substrates by Chemical solution deposition (CSD). The electrooptic property of the films was evaluated using a photospectroscope. Site occupation was determined by Raman spectroscopy. As a result, it is found that the resonant wavelength shift by applying DC bias voltage is maximum in the La-PZT film with a La content of 0%, not 8-9%, and La ions were also substituted for B-site at La-contents over 3% while La ions were selectively substituted only for A-site up to the La-content of 3% in our films.

    DOI: 10.14853/pcersj.2007s.0.172.0

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  • Bottom-up assembly for high-k dielectric nanofilms using oxide nanosheets as building blocks

    Osada Minoru, Akatsuka Kosho, Ebina Yasuo, Funakubo Hiroshi, Takada Kazunori, Sasaki Takayoshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2007F   182 - 182   2007

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    DOI: 10.14853/pcersj.2007f.0.182.0

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  • Structural and ferroelectric and magnetic properties of BaTiO3-BiCoO3 films

    takaiwa Norihisa, Naganuma Hiroshi, Shima Hiromi, Ijima Takashi, Funakubo Hiroshi, Okamura Soichiro

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2007S   305 - 305   2007

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    Tetragonal type of ferroelectric materials are attracted much interest because a large piezoelectric effect can be expected in a high tetragonality material. In term of a typical tetragonal ferroelectric material of BaTiO3, the tetragonality is too low (c/a=1.01). In contrast, BiCoO3 has high tetragonality of 1.27. In our aim is to fabricate the BaTiO3-BiCoO3 solid solution films and investigated their structure, ferroelectric and ferromagnetic properties.

    DOI: 10.14853/pcersj.2007s.0.305.0

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  • MOCVD of 3 dimensional PZT capacitors

    Funakubo Hiroshi, Nagai Atsushi, Minamidate Jun, Choi Chel Jong, Koo June-Mo, Park Youngsoo

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2007F   798 - 798   2007

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    DOI: 10.14853/pcersj.2007f.0.798.0

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  • Twin-free epitaxial films lateral relation between YSZ(111) and Si(111)

    Satoru Kaneko, Kensuke Akiyama, Taku Oguni, Takeshi Ito, Yasuo Hirabayashi, Seishiro Ohya, Koichi Seo, Yutaka Sawada, Hiroshi Funakubo, Mamoru Yoshimoto

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   45 ( 46-50 )   L1328 - L1330   2006.12

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  • Strong dependence on thickness of room-temperature dielectric constant of (100)-oriented Pb(Mg1/3Nb2/3)O-3 epitaxial films grown by metal organic chemical vapor deposition

    Satoshi Okamoto, Shintaro Yokoyama, Shoji Okamoto, Keisuke Saito, Hiroshi Uchida, Seiichiro Koda, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   45 ( 37-41 )   L1074 - L1076   2006.10

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  • Strong dependence on thickness of room-temperature dielectric constant of (100)-oriented Pb(Mg1/3Nb2/3)O-3 epitaxial films grown by metal organic chemical vapor deposition

    Satoshi Okamoto, Shintaro Yokoyama, Shoji Okamoto, Keisuke Saito, Hiroshi Uchida, Seiichiro Koda, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   45 ( 37-41 )   L1074 - L1076   2006.10

  • Crystal structure, electrical properties, and mechanical response of (100)-/(001)-oriented epitaxial Pb(Mg1/3Nb2/3)O-3-PbTiO3 films grown on (100)(c)SrRuO3 parallel to(100)SrTiO3 substrates by metal-organic chemical vapor deposition

    Shintaro Yokoyama, Satoshi Okamoto, Hiroshi Funakubo, Takashi Iijima, Keisuke Saito, Hirotake Okino, Takashi Yamamoto, Ken Nishida, Takashi Katoda, Joe Sakai

    JOURNAL OF APPLIED PHYSICS   100 ( 5 )   054110.   2006.9

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  • Structural characterization of BiFeO3 thin films by reciprocal space mapping

    Keisuke Saito, Alexander Ulyanenkov, Volkmar Grossmann, Heiko Ress, Lutz Bruegemann, Hideo Ohta, Toshiyuki Kurosawa, Sadao Ueki, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   45 ( 9B )   7311 - 7314   2006.9

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  • Controlled crystal growth of layered-perovskite thin films as an approach to study their basic properties

    Takayuki Watanabe, Hiroshi Funakubo

    JOURNAL OF APPLIED PHYSICS   100 ( 5 )   051602-1-11.   2006.9

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  • c軸配向ビスマス層状化合物膜の誘電特性 (特集 エレクトロニクセラミックス薄膜)

    舟窪 浩, 高橋 健治, 渡辺 隆之

    マテリアルインテグレ-ション   19 ( 9 )   3 - 7   2006.9

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  • Site occupancy analysis on the enhancement in Dy-substituted Pb(Zr,Ti)O-3 film

    Ken Nishida, Minoru Osada, Hiroshi Uchida, Hiroshi Nakaki, Seiichiro Koda, Hiroshi Funakubo, Takashi Katoda

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   45 ( 9B )   7548 - 7551   2006.9

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  • Thickness dependence of dielectric properties in bismuth layer-structured dielectrics

    Kenji Takahashi, Muneyasu Suzuki, Takashi Kojima, Takayuki Watanabe, Yukio Sakashita, Kazumi Kato, Osami Sakata, Kazushi Sumitani, Hiroshi Funakubo

    APPLIED PHYSICS LETTERS   89 ( 8 )   082901-1-3.   2006.8

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  • Strain-amplified structural modulation of Bi-cuprate high-T-c superconductors

    Satoru Kaneko, Kensuke Akiyama, Hiroshi Funakubo, Mamoru Yoshimoto

    PHYSICAL REVIEW B   74 ( 5 )   054503-1-4.   2006.8

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  • Fatigue properties of epitaxial Pb(Zr0.35Ti0.65)O-3 films with various volume fractions of 90 degrees domains grown on (100)(c)SrRuO3/(100)SrTiO3 substrates

    Yong Kwan Kim, Hitoshi Morioka, Hiroshi Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   45 ( 8A )   6382 - 6384   2006.8

  • Crystal structure and ferroelectric properties of rare-earth substituted BiFeO3 thin films

    Hiroshi Uchida, Risako Ueno, Hiroshi Funakubo, Seiichiro Koda

    JOURNAL OF APPLIED PHYSICS   100 ( 1 )   014106-1-9.   2006.7

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  • Preparation and structural analysis of micro-patterned Pb(Zr,Ti)O-3 film by metalorganic chemical vapor deposition

    S Yokoyama, K Takahashi, S Okamoto, A Nagai, J Minamidate, K Saito, N Ohashi, H Haneda, O Sakata, S Kimura, K Nishida, T Katoda, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   45 ( 6A )   5102 - 5106   2006.6

  • Photoluminescence properties of Si/beta-FeSi2/Si double heterostructure

    Kensuke Akiyama, Satoru Kaneko, Yasuo Hirabayashi, Hiroshi Funakubo

    THIN SOLID FILMS   508 ( 1-2 )   380 - 384   2006.6

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  • Domain structures and piezoelectric properties in epitaxial Pb(Zr-0.35,Ti-0.65)O-3 thin films

    Yong Kwan Kim, Hitoshi Morioka, Risako Ueno, Shintaro Yokoyama, Hiroshi Funakubo, Kilho Lee, Sunggi Baik

    APPLIED PHYSICS LETTERS   88 ( 25 )   252904-1-3.   2006.6

  • MOCVDプロセスにおけるin-situモニタリングの重要性と今後の展望—特集 第2回堀場雅夫賞

    舟窪 浩

    Readout : Horiba technical reports   ( 32 )   54 - 59   2006.5

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    Other Link: https://ndlsearch.ndl.go.jp/books/R000000004-I8049593

  • High-k dielectric nanofilms fabricated from Titania nanosheets

    M Osada, Y Ebina, H Funakubo, S Yokoyama, T Kiguchi, K Takada, T Sasaki

    ADVANCED MATERIALS   18 ( 8 )   1023 - +   2006.4

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  • Epitaxial BiFeO3 thin films fabricated by chemical solution deposition

    SK Singh, YK Kim, H Funakubo, H Ishiwara

    APPLIED PHYSICS LETTERS   88 ( 16 )   162904-1-3.   2006.4

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  • Effect of template layer on formation of flat-surface beta-FeSi2 epitaxial films on (111) Si by metal-organic chemical vapor deposition

    K Akiyama, Y Hirabayashi, S Kaneko, T Kimura, S Yokoyama, H Funakubo

    JOURNAL OF CRYSTAL GROWTH   289 ( 1 )   37 - 43   2006.3

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  • In situ FTIR investigation of the effect of gas-phase reaction on the deposition of Pb(ZrTi)O-3 films by MOCVD

    G Asano, T Satake, K Ohtsuki, H Funakubo

    THIN SOLID FILMS   498 ( 1-2 )   277 - 281   2006.3

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  • MOCVD of single-axis c-oriented strontium bismuth titanate thin films and their electrical properties

    K Takahashi, M Suzuki, T Oikawa, T Kojima, T Watanabe, H Funakubo

    CHEMICAL VAPOR DEPOSITION   12 ( 2-3 )   136 - 142   2006.3

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  • Growth behavior of c-axis-oriented epitaxial SrBi2Ta2O9 films on SrTiO3 substrates with atomic scale step structure

    K Takahashi, M Suzuki, M Yoshimoto, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   45 ( 4-7 )   L138 - L141   2006.2

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  • Metalorganic chemical vapor deposition of epitaxial perovskite SrIrO3 films on (100)SrTiO3 substrates

    YK Kim, A Sumi, K Takahashi, S Yokoyama, S Ito, T Watanabe, K Akiyama, S Kaneko, K Saito, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   45 ( 1-3 )   L36 - L38   2006.1

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  • Structural modulation in bismuth cuprate superconductor observed by X-ray reciprocal space mapping

    S Kaneko, K Akiyama, Y Shimizu, Y Hirabayashi, S Ohya, H Funakubo, M Yoshimoto

    JOURNAL OF CRYSTAL GROWTH   287 ( 2 )   483 - 485   2006.1

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  • Horizontal growth of epitaxial (100) beta-FeSi2 templates by metal-organic chemical vapor deposition

    K Akiyama, S Kaneko, Y Hirabayashi, T Suemasu, H Funakubo

    JOURNAL OF CRYSTAL GROWTH   287 ( 2 )   694 - 697   2006.1

  • 化学溶液法によるBiFeO3-BiScO3薄膜の作製

    安井伸太郎, 内田寛, 中木寛, 舟窪浩, 幸田清一郎

    応用物理学関係連合講演会講演予稿集   53rd ( 2 )   2006

  • Investigation of Sr-Ru-O/Ru multilayer-electrodes prepared by MOCVD

    Jun Minamidate, Atsushi Nagai, Hiroki Kuwabara, Hiroshi Funakubo, June Mo Koo, Suk Pil Kim, Youngsoo Park

    INTEGRATED FERROELECTRICS   81   249 - 260   2006

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  • Trial for making three dimensional PZT capacitor for high density ferroelectric random access memory

    Hiroshi Funakubo, Atsushi Nagai, Jun Minamidate, June Mo Koo, Suk Pil Kim, Youngsoo Park

    INTEGRATED FERROELECTRICS   81   219 - 226   2006

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  • A new method to characterize a relative volume to the c-domain in PZT films based on Raman spectra

    K Nishida, M Osada, S Wada, S Okamoto, R Ueno, H Funakubo, T Katoda

    INTEGRATED FERROELECTRICS   78   281 - 287   2006

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  • Observation of Domain Switching in Fatigued Epitaxial Pb(Zr,Ti)O3 Thin Films

    Yong Kwan, Kim Shintaro Yokoyama Risako Ueno, Hitoshi Morioka, Osami Sakata, Shigeru Kimura, Keisuke Saito, Hiroshi Funakubo

    Mater. Res. Soc. Symp. Proc.   902E ( No. )   0902-T10-67.1-6.   2006

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  • Electric-Field-Induced Displacements in Pt/PZT/Pt/SiO2/Si System Investigated by Finite Element Method: Material-Constant Dependences

    Hirotake Okino, Masahiro Hayashi, Takashi Iijima, Shintaro Yokoyama, Hiroshi Funakubo, Nava Setter, Takashi Yamamoto

    Mater. Res. Soc. Symp. Proc.   902E ( No. )   0902-T03-49.1-6.   2006

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  • Initial Growth Behavior of Ultra-Thin c-Axis-Oriented Epitaxial SrBi2Ta2O9 films on SrTiO3

    Kenji Takahashi, Muneyasu Suzuki, Mamoru Yoshimoto, Hiroshi Funakubo

    Mater. Res. Soc. Symp. Proc.   902E ( No. )   0902-T03-39.1-6.   2006

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  • “Twin-Free Epitaxial Films Lateral Relation between YSZ(111) and Si(111)”,

    HIROSHI FUNAKUBO, Satoru Kaneko, Kensuke Akiyama, Taku Oguni, Takeshi Ito, Yasuo Hirabayashi, Seishiro Ohya, Koichi Seo, Yutaka Sawada, Mamoru Yoshimoto

    Jpn. J. Appl. Phys.   45 ( 50 )   L1328-L1330   2006

  • “Strong Dependence on Thickness of Room-Temperature Dielectric Constant of (100)-Oriented Pb(Mg1/3Nb2/3)O3 Epitaxial Films Grown by Metal Organic Chemical Vapor Deposition”

    HIROSHI FUNAKUBO

    Jpn. J. Appl. Phys.   45 ( 40 )   L1074-L1076   2006

  • “Properties of a Novel Bismuth Percursor for MOCVD”

    T. Furukawa, N. Oshima, M. Suzuki, Shouji Okamura, HIROSHI FUNAKUBO

    Integ. Ferro.   84 ( No. )   197 - 202   2006

  • Crystal structure, electrical properties, and mechanical response of (100)-/(001)-oriented epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 films grown on (100)cSrRuO3 // (100)SrTiO3 substrates by metal-organic chemical vapor deposition

    Shintaro Yokoyama, Satoshi Okamoto, Hiroshi, Funakubo Takashi Iijima Keisuke, Saito Hirotake, Okino, Takashi Yamamoto Ken, Nishida Takashi, Katoda Joe Sakai

    J. Appl. Phys.   100   054110.   2006

  • Metalorganic Chemical Vapor Deposition of Epitaxial Perovskite SrIrO3 Films on (100)SrTiO3 substrates

    Yong Kwan Kim, Akihiro Sumi, Kenji Takahashi, Shintaro Yokoyama, Shinichi Ito, Takayuki Watanabe, Kensuke Akiyama, Satoru Kaneko, Keisuke Saito, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   45 ( 01 )   L36-L38.   2006

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    DOI: 10.1143/JJAP.45.L36

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  • Conformality of Pb(Zr, Ti)O3 Films Deposited on Trench Structures Having Submicrometer Diameter and Various Aspect Ratios

    Atsushi Nagai, Jun Minamidate, Gouji Asano, Chel Jong Choi, Choong-Rae Cho, Youngsoo Park, Hiroshi Funakubo

    Electrochem. Solid-State Lett.   9 ( 1 )   C15-C18   2006

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    DOI: 10.1149/1.2137470

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  • Conformability of ruthenium dioxide films prepared on substrates with capacitor holes by MOCVD and modification by annealing

    Kazuhisa Kawano, Hiroaki Kosuge, Noriaki Oshima, Hiroshi Funakubo

    ELECTROCHEMICAL AND SOLID STATE LETTERS   9 ( 11 )   C175 - C177   2006

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  • Strain-amplified structural modulation of Bi-cuprate high- Tc superconductors

    Satoru Kaneko, Kensuke Akiyama, Hiroshi Funakubo, Mamoru Yoshimoto

    Physical Review B - Condensed Matter and Materials Physics   74 ( 5 )   054503-1-4.   2006

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  • Fatigue Properties of Epitaxial Pb(Zr0:35Ti0:65)O3 Films with Various Volume Fractions of 90° Domains Grown on (100)cSrRuO3/(100)SrTiO3 Substrates

    Yong Kwan, Kim Hitoshi Morioka, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   45 ( 8A )   6382-6384.   2006

  • Formation of stoichiometric SrRuO3 electrodes for PZT capacitors by pulsed-MOCVD

    Jun Minamidate, Atsushi Nagai, Sukpil Kim, June-mo Koo, Sangmin Shin, Youngsoo Park, Hiroshi Funakubo

    ELECTROCHEMICAL AND SOLID STATE LETTERS   9 ( 10 )   C164 - C166   2006

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  • In situ FTIR investigation of the effect of gas-phase reaction on the deposition of Pb(Zr,Ti)O3 films by MOCVD

    Gouji Asano, Tsukasa Satake Kunio, Ohtsuki Hiroshi Funakubo

    Thin Solid Films   498   277 - 281   2006

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    DOI: 10.1016/j.tsf.2005.07.126

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  • Conformality of Pb(Zr, Ti)O-3 films deposited on trench structures having submicrometer diameter and various aspect ratios

    A Nagai, J Minamidate, G Asano, CJ Choi, CR Cho, Y Park, H Funakubo

    ELECTROCHEMICAL AND SOLID STATE LETTERS   9 ( 1 )   C15 - C18   2006

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  • Characteristic Comparison Of Epitaxial PZT And PMN-PT Films Grown On (100)cSrRuO3//(100)SrTiO3 Substrates By Metalorganic Chemical Vapor Deposition

    Shintaro Yokoyama, Satoshi Okamoto, Keisuke Saito, Takashi Iijima Hirotake, Okino, Takashi Yamamoto Ken, Nishida Takashi, Katoda Joe, Sakai, Hiroshi Funakubo

    Mater. Res. Soc. Symp. Proc.   902E   0902-T03-29.1-6.   2006

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  • Dielectric Property Controls Using Crystal Structure Anisotropy In Bismuth Layer-Structured Dielectrics

    Muneyasu Suzuki Kenji, Takahashi Takayuki Watanabe, Tadashi Takenaka, Hiroshi Funakubo

    Mater. Res. Soc. Symp. Proc.   902E   0902-T02-06.1-6.   2006

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  • DOMINANT FACTOR OF SQUARENESS IN P-E HSYTERESIS LOOPS OF MOCVD-PZT FILMS

    Hiroshi Funakubo Akihiro Sumi Hitoshi Morioka, Shoji Okamoto, Shintaro Yokoyama

    Mater. Res. Soc. Symp. Proc.   902E   0902-T04-04.1-6   2006

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  • Horizontal growth of epitaxial (100) β-FeSi2 templates by metal-organic chemical vapor deposition

    Kensuke Akiyama, Satoru Kaneko, Yasuo Hirabayashi, Takashi Suemasu, Hiroshi Funakubo

    Journal of Crystal Growth   287 ( No. )   694 - 697   2006

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  • Control of β-FeSi2/Si(100) Interface Structure by Cu Layer

    Kensuke Akiyama, Masaru Itakura, Satoru Kaneko, Hiroshi Funakubo, Yoshihito Maeda

    Proc. The 16th International Microscopy Congress   1348   2006

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  • Crystal structure and electrical properties of rare-earth-substituted bismuth ferrite thin films

    Uchida Hiroshi, Yasui Shintaro, Funakubo Hiroshi, Koda Seiichiro

    Preprints of Annual Meeting of The Ceramic Society of Japan<br>Preprints of Fall Meeting of The Ceramic Society of Japan   2006 ( 0 )   448 - 448   2006

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    BiFeO&lt;SUB&gt;3&lt;/SUB&gt; (BFO) は優れた分極特性を有する巨大分極材料であると同時に,強誘電性と強磁性を併せ持つマルチフェロイク材料の有力な候補である.本研究では,希土類置換によるBFO基薄膜の結晶構造および相転移挙動の変化,ならびにそれらと強誘電特性との関係について調査し,希土類置換に伴う特性改善のメカニズムを明らかにする.化学溶液法により作製されたLaおよびNd置換BFO薄膜では希土類イオン置換に伴い格子異方性および相転移温度が低下し,それに対応した残留分極値の減少が確認された.しかしながら,これらの試料では無置換BFO薄膜に比較して大幅な絶縁性の改善が認められた.

    DOI: 10.14853/pcersj.2006S.0.448.0

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  • Ion Modification for Improvement of Electrical Properties of Perovskite-based Ferroelectric Thin Films Fabricated by Chemical Solution Deposition Method

    Hiroshi Uchida Shintaro, Yasui Risako, Ueno, Hiroshi, Nakaki Ken, Nishida Minoru, Osada Hiroshi Funakubo Takashi Katoda Seiichiro Koda

    Mater. Res. Soc. Symp. Proc.   902E   0902-T04-10.1-6.   2006

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  • Properties of a novel bismuth percursor for MOCVD

    T. Furukawa, N. Oshima, M. Suzuki, S. Okaura, H. Funakubo

    INTEGRATED FERROELECTRICS   84 ( No. )   197 - 202   2006

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  • Strong Dependence on Thickness of Room-Temperature Dielectric Constant of (100)-Oriented Pb(Mg1/3Nb2/3)O3 Epitaxial Films Grown by Metal Organic Chemical Vapor Deposition

    Satoshi Okamoto, Shintaro Yokoyama, Shoji Okamoto, Keisuke Saito, Hiroshi Uchida Seiichiro Koda, Hiroshi Funakubo

    Jpn. J. Appl. Phys.,   45 ( 40 )   pp.L1074-L1076.   2006

  • Initial Growth Behavior of Ultra-Thin c-Axis-Oriented Epitaxial SrBi2Ta2O9 films on SrTiO3

    Kenji Takahashi, Muneyasu Suzuki, Mamoru Yoshimoto, Hiroshi Funakubo

    Mater. Res. Soc. Symp. Proc.   902E   0902-T03-39.1-6.   2006

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  • Characteristic Comparison Of Epitaxial PZT And PMN-PT Films Grown On (100)cSrRuO3//(100)SrTiO3 Substrates By Metalorganic Chemical Vapor Deposition

    Shintaro Yokoyama, Satoshi Okamoto, Keisuke Saito, Takashi Iijima Hirotake, Okino, Takashi Yamamoto Ken, Nishida Takashi, Katoda Joe, Sakai, Hiroshi Funakubo

    Mater. Res. Soc. Symp. Proc.   902E   0902-T03-29.1-6.   2006

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  • Dielectric Property Controls Using Crystal Structure Anisotropy In Bismuth Layer-Structured Dielectrics

    Muneyasu Suzuki Kenji, Takahashi Takayuki Watanabe, Tadashi Takenaka, Hiroshi Funakubo

    Mater. Res. Soc. Symp. Proc.   902E   0902-T02-06.1-6.   2006

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  • DOMINANT FACTOR OF SQUARENESS IN P-E HSYTERESIS LOOPS OF MOCVD-PZT FILMS

    Hiroshi Funakubo Akihiro Sumi Hitoshi Morioka, Shoji Okamoto, Shintaro Yokoyama

    Mater. Res. Soc. Symp. Proc.   902E   0902-T04-04.1-6   2006

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  • Electric-Field-Induced Displacements in Pt/PZT/Pt/SiO2/Si System Investigated by Finite Element Method: Material-Constant Dependences

    Hirotake Okino, Masahiro Hayashi, Takashi Iijima, Shintaro Yokoyama, Hiroshi Funakubo, Nava Setter, Takashi Yamamoto

    Mater. Res. Soc. Symp. Proc.   902E   0902-T03-49.1-6.   2006

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  • In situ FTIR investigation of the effect of gas-phase reaction on the deposition of Pb(Zr,Ti)O3 films by MOCVD

    Gouji Asano, Tsukasa Satake Kunio, Ohtsuki Hiroshi Funakubo

    Thin Solid Films   498   277 - 281   2006

  • Effect of template layer on formation of flat-surface -FeSi2 epitaxial films on (111) Si by Metal-organic chemical vapor deposition

    Kensuke Akiyama, Yasuo Hirabayashi, Satoru Kaneko, Takeshi Kimura, Shintaro Yokoyama, Hiroshi Funakubo

    Journal of Crystal Growth   289   37 - 43   2006

  • Structural modulation in bismuth cuprate superconductor observed by X-ray reciprocal space mapping

    Satoru Kaneko, Kensuke Akiyama, Yoshitada Shimizu, Yasuo Hirabayashi, Seishiro Ohya, Hiroshi Funakubo, Mamoru Yoshimoto

    Journal of Crystal Growth   287 ( No. )   483 - 485   2006

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  • Growth Behavior of c-Axis-Oriented Epitaxial SrBi2Ta2O9 Films on SrTiO3 Substrates with Atomic Scale Step Structure

    Kenji Takahashi, Muneyasu Suzuki, Mamoru Yoshimoto, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   45 ( 5 )   L138-141   2006

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    DOI: 10.1143/JJAP.45.L138

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  • “Intrinsic Properties of (100)/(001)-Oriented Epitaxial PZT Thin Films Grown on (100)Si and (100)SrTiO3 Substrates”

    Yong Kwan, Kim, Hitoshi Morioka, Shoji Okamoto, Shintaro Yokoyama, Hiroshi Funakubo

    Integ. Ferro.   78   223-232.   2006

  • Seed layer free conformal ruthenium film deposition on hole substrates by MOCVD using (2,4-dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium

    Kazuhisa Kawano, Atsushi Nagai, Hiroaki Kosuge, Tetsuo Shibutami, Noriaki Oshima, Hiroshi Funakubo

    ELECTROCHEMICAL AND SOLID STATE LETTERS   9 ( 7 )   C107 - C109   2006

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  • MOCVD growth of epitaxial pyrochlore Bi2Ti2O7 thin film

    Muneyasu Suzuki, Takayuki Watanabe, Tadashi Takenaka, Hiroshi Funakubo

    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY   26 ( 10-11 )   2155 - 2159   2006

  • Observation of Domain Switching in Fatigued Epitaxial Pb(Zr,Ti)O3 Thin Films

    Yong Kwan, Kim Shintaro Yokoyama Risako Ueno, Hitoshi Morioka, Osami Sakata, Shigeru Kimura, Keisuke Saito, Hiroshi Funakubo

    Mater. Res. Soc. Symp. Proc.   902E   0902-T10-67.1-6.   2006

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  • Crystal orientation anisotropy of epitaxial Pb(Mg1/3Nb2/3)O-3-PbTiO3 thick films grown by MOCVD

    Shintaro Yokoyama, Satoshi Okamoto, Shoji Okamoto, Takashi Iijima, Keisuke Saito, Hirotake Okino, Takashi Yamamoto, Hiroshi Funakubo

    INTEGRATED FERROELECTRICS   80 ( No. )   67 - 76   2006

  • A New Method to Characterize a Relative Volume to the c-Domain in PZT Films Based on Raman Spectra

    K. Nishida, M. Osada, S. Wada, S. Okamoto, R. Ueno, H. Funakubo, T. Katoda

    Integ. Ferro.   78   281-287.   2006

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    DOI: 10.1080/10584580600663425

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  • Intrinsic properties of (100)/(001)-oriented epitaxial PZT thin films grown on (100)Si and (100)SrTiO3 substrates

    Yong Kwan Kim, Hitoshi Morioka, Shoji Okamoto, Shintaro Yokoyama, Hiroshi Funakubo

    INTEGRATED FERROELECTRICS   78   223 - 232   2006

  • Domain structures and piezoelectric properties in epitaxial Pb(Zr0.35,Ti0.65)O3 thin films

    Yong Kwan Kim, Hitoshi Morioka, Risako Ueno, Shintaro Yokoyama, Hiroshi Funakubo, Kilho Lee, Sunggi Baik

    Appl. Phys. Lett.,   88 ( No. )   252904-1-3.   2006

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    DOI: 10.1063/1.2214169

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  • High- Dielectric Nanofilms Fabricated from Titania Nanosheets”,

    Minoru Osada, Yasuo Ebina, Hiroshi Funakubo Shintaro Yokoyama Takanori Kiguchi Kazunori Takada Takayoshi Sasaki

    Advanced Materials,   18   1023-1027.   2006

  • MOCVD growth of epitaxial pyrochlore Bi2Ti2O7 thin film

    Muneyasu Suzuki, Takayuki Watanabe, Tadashi Takenaka, Hiroshi Funakubo

    J. European Ceram. Soc.   26 ( No. )   2155-2159.   2006

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  • Investigation of domain distribution in patterned PZT thin films using Raman spectroscopy

    Ken Nishida, Minoru Osada, Shintaro Yokoyama, Kenji Takahashi, Hiroshi Funakubo, Takashi Katoda

    Transactions of the Materials Research Society of Japan, Vol 31, No 1   31 ( 1 )   27 - 30   2006

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  • Electronic structure in the valence band of (Pb,La)(Zr,Ti)O-3 thin films probed by soft-X-ray emission spectroscopy

    Tohru Higuchi, Takeyo Tsukamoto, Takeshi Hattori, Yoshihisa Honda, Shintaro Yokoyama, Hiroshi Funakubo

    TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN, VOL 31, NO 1   31 ( 1 )   23 - +   2006

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    Web of Science

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  • Preparation and Structural Analysis of Micro-patterned Pb(Zr,Ti)O3 Film by Metalorganic Chemical Vapor Deposition

    Shintaro Yokoyama, Kenji Takahashi, Shoji Okamoto, Atsushi Nagai, Jun Minamidate, Keisuke Saito, Naoki Ohashi, Hajime Haneda, Osami Sakata, Shigeru Kimura, Ken Nishida, Takashi Katoda, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   45 ( 6A )   pp.5102-5106.   2006

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    DOI: 10.1143/JJAP.45.5102

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  • Seed Layer Free Conformal Ruthenium Film Deposition on Hole Substrates by MOCVD Using (2,4-Dimethylpentadienyl)(ethylcyclopentadienyl)ruthenium

    Kazuhisa Kawano, Atsushi Nagai, Hiroaki Kosuge, Tetsuo, Shibutami Noriaki Oshima, Hiroshi Funakubo

    Electrochem. Solid-State Lett.   9 ( 7 )   C107-C109   2006

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  • Epitaxial BiFeO3 thin films fabricated by chemical solution deposition

    S. K. Singh, Y. K. Kim, H. Funakubo, H. Ishiwara

    Appl. Phys. Lett.,   88 ( No. )   162904-1-3.   2006

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    DOI: 10.1063/1.2196477

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  • Thickness Dependence of Dielectric Properties in Bismuth Layer-structured Dielectrics

    Kenji Takahashi, Muneyasu Suzuki, Takashi Kojima, Takayuki Watanabe, Yukio Sakashita, Kazumi Kato, OSAMI SAKATA, Kazushi Sumitani, Hiroshi Funakubo

    Appl. Phys. Lett.   89 ( No. )   082901-1-3.   2006

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    DOI: 10.1063/1.2336626

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  • Structural Characterization of BiFeO3 Thin Films by Reciprocal Space Mapping

    Keisuke Saito, Alexander Ulyanenkov, Volkmar Grossmann, Heiko Ress, Lutz Bruegemann, Hideo Ohta, Toshiyuki Kurosawa, Sadao Ueki, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   45 ( 9B )   7311-7314.   2006

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    DOI: 10.1143/JJAP.45.7311

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  • Electrical properties of perovskite-based ferroelectric thin films modified using rare-earth elements

    Hiroshi Uchida, Hiroshi Nakaki, Hiroshi Funakubo, Seiichiro Koda

    ELECTROCERAMICS IN JAPAN IX   320   49 - 52   2006

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  • Controlled crystal growth of layered-perovskite thin films as an approach to study their basic properties

    Takayuki Watanabe, Hiroshi Funakubo

    J. Appl. Phys.   100   051602-1-11.   2006

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    DOI: 10.1063/1.2337357

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  • Conformability of Ruthenium Dioxide Films Prepared on Substrates with Capacitor Holes by MOCVD and Modification by Annealing

    Kazuhisa Kawano, Hiroaki, Kosuge, Noriaki Oshima, Hiroshi Funakubo

    Electrochem. Solid-State Lett.   9 ( 11 )   C175-C177.   2006

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  • Formation of Stoichiometric SrRuO3 Electrodes for PZT Capacitors by Pulsed-MOCVD

    Jun Minamidate, Atsushi Nagai, Sukpil Kim, June-mo Koo, Sangmin Shin, Youngsoo Park, Hiroshi Funakubo

    Electrochem. Solid-State Lett.   9 ( 10 )   C164-C166.   2006

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    DOI: 10.1149/1.2221768

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  • Photoluminescence properties of Si/-FeSi2/Si double heterostructure

    Kensuke Akiyama, Satoru Kaneko, Yasuo Hirabayashi, Hiroshi Funakubo

    Thin Solid Films   508   380-384.   2006

  • Investigation of Sr-Ru-O/Ru Multilayer-Electrodes Prepared by MOCVD

    Jun Minamidate, Atsushi Nagai, Hiroki Kuwabara, Hiroshi Funakubo, June Mo Koo, Suk Pil Kim, Youngsoo Park

    Integ. Ferro.   81   249-260.   2006

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    DOI: 10.1080/10584580600660538

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  • Trial for Making Three Dimensional PZT Capacitor for High Density Ferroelectric Random Access Memory

    Hiroshi Funakubo, Atsushi Nagai, Jun Minamidate, June Mo Koo, Suk Pil Kim, Youngsoo Park

    Integ. Ferro.   81   219-226.   2006

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    DOI: 10.1080/10584580600660488

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  • Ruthenium and Ruthenium Oxide Films Deposition by MOCVD Using Ru(DMPD)2

    Kazuhisa Kawano, Hiroaki Kosuge, Noriaki Oshima, Hiroshi Funakubo

    ECS Trans   1 ( 5 )   139.   2006

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    DOI: 10.1149/1.2209263

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  • Crystal structure and ferroelectric properties of rare-earth substituted BiFeO3 thin films

    Hiroshi Uchida, Risako Ueno, Hiroshi Funakubo, Seiichiro Koda

    Jpn. J. Appl. Phys.   100   014106-1-9.   2006

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    DOI: 10.1063/1.2210167

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  • MOCVD of Single-Axis c-Oriented Strontium Bismuth Titanate Thin Films and Their Electrical Properties

    Kenji Takahashi, Muneyasu Suzuki Takahiro Oikawa, Takashi Kojima, Takayuki Watanabe, Hiroshi Funakubo

    Chem. Vap. Deposition,   12   136-142.   2006

  • Ion Modification for Improvement of Electrical Properties of Perovskite-based Ferroelectric Thin Films Fabricated by Chemical Solution Deposition Method

    Hiroshi Uchida Shintaro, Yasui Risako, Ueno, Hiroshi, Nakaki Ken, Nishida Minoru, Osada Hiroshi Funakubo Takashi Katoda Seiichiro Koda

    Mater. Res. Soc. Symp. Proc.   902E   0902-T04-10.1-6.   2006

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  • Piezoelectric Property Comparison of Epitaxial PZT and PMN-PT Films Grown by MOCVD

    Funakubo Hiroshi, Yokoyama Shintaro, Nakakai Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2006F   5 - 5   2006

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    DOI: 10.14853/pcersj.2006f.0.5.0

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  • Novel fabrication for high-k devices using multilayer assemblies of oxide nanosheets

    Osada Minoru, Ebina Yasuo, Funakubo Hiroshi, Kiguchi Takanori, Takada Kazunori, Sasaki Takayoshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2006F   40 - 40   2006

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    DOI: 10.14853/pcersj.2006f.0.40.0

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  • Oxygen contents and electrical properties of annealed SrRuO3 thin films

    Sakai Joe, Ito Nobuaki, Ito Shin-ichi, Takahashi Kenji, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2006F   22 - 22   2006

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    DOI: 10.14853/pcersj.2006f.0.22.0

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  • Preparation of Ultra thin PZT films with (111) one-axis oriented Film by MOCVD

    Funakubo Hiroshi, kuwabara Hiroki, Yokoyama Shintaro, NISHIDA Ken, KATODA Takashi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2006S   2 - 2   2006

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    DOI: 10.14853/pcersj.2006s.0.2.0

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  • Domain distributions in tetragonal Pb(Zr, Ti)O-3 thin films probed by polarized Raman spectroscopy

    M Osada, K Nishida, S Wada, S Okamoto, R Ueno, H Funakubo, T Katoda

    APPLIED PHYSICS LETTERS   87 ( 23 )   232902-1-3.   2005.12

  • Dependence of ferroelectric properties on thickness of BiFeO3 thin films fabricated by chemical solution deposition

    SK Singh, R Ueno, H Funakubo, H Uchida, S Koda, H Ishiwara

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 12 )   8525 - 8527   2005.12

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  • Dependence of electrical properties of epitaxial Pb(Zr,Ti)O-3 thick films on crystal orientation and Zr/(Zr+Ti) ratio

    S Yokoyama, Y Honda, H Morioka, S Okamoto, H Funakubo, T Iijima, H Matsuda, K Saito, T Yamamoto, H Okino, O Sakata, S Kimura

    JOURNAL OF APPLIED PHYSICS   98 ( 9 )   094106   2005.11

  • Comparison of electrical properties of (100)/(001)-oriented epitaxial Pb(Zr-0.35,Ti-0.65)O-3 thin films with the same (001) domain fraction grown on (100)Si and (100)SrTiO3 substrates

    YK Kim, H Morioka, S Okamoto, T Watanabe, S Yokoyama, A Sumi, H Funakubo, K Saito

    APPLIED PHYSICS LETTERS   87 ( 18 )   182907   2005.10

  • Enhancement of spontaneous polarization in lead zirconate titanate thin films by Dy3+ substitution

    H Nakaki, H Uchida, S Koda, S Okamoto, H Funakubo, K Nishida, T Katoda, K Saito

    APPLIED PHYSICS LETTERS   87 ( 18 )   182906   2005.10

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  • 化学気相成長法によるβ-FeSi2薄膜の結晶成長とPL発光特性 (特集 シリサイド半導体の最新動向)

    秋山 賢輔, 舟窪 浩

    機能材料   25 ( 10 )   41 - 46   2005.10

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  • PbTiO3 content dependence of crystal structure and electrical properties of (100)-/(001)-oriented epitaxial Pb(Mg1/3Nb2/3)O-3-PbTiO3 films grown by metalorganic chemical vapor deposition

    S Yokoyama, S Okamoto, S Okamoto, H Funakubo, H Matsuda, T Iijima, K Saito, H Okino, T Yamamoto

    JOURNAL OF APPLIED PHYSICS   98 ( 8 )   086112-1-3   2005.10

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  • Electronic structure of (Pb,La)(Zr,Ti)O-3 thin film probed by soft-X-ray spectroscopy

    T Higuchi, T Tsukamoto, T Hattori, Y Honda, S Yokoyama, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 9B )   6923 - 6926   2005.9

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  • Enhancement of polarization property of PZT film by ion-substitution using rare-earth elements

    H Nakaki, H Uchida, K Nishida, M Osada, H Funakubo, T Katoda, S Koda

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 9B )   6905 - 6909   2005.9

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  • Orientation dependence of epitaxial and one-axis-oriented (Ba0.5Sr0.5)TiO3 films prepared by RF magnetron sputtering

    S Ito, K Takahashi, S Okamoto, IP Koutsaroff, A Cervin-Lawry, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 9B )   6881 - 6884   2005.9

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  • MOCVD growth of Bi1.5Zn1.0Nb1.5O7 (BZN) epitaxial thin films and their electrical properties

    S Okaura, M Suzuki, S Okamoto, H Uchida, S Koda, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 9B )   6957 - 6959   2005.9

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  • MOCVD growth of epitaxial SrIrO3 films on (111)SrTiO3 substrates

    A Sumi, YK Kim, N Oshima, K Akiyama, K Saito, H Funakubo

    THIN SOLID FILMS   486 ( 1-2 )   182 - 185   2005.8

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  • Effect of oxygen pressure on structural modulation observed by X-ray reciprocal space mapping in epitaxial bismuth cuprate superconducting.

    S Kaneko, K Akiyama, M Mitsuhashi, Y Hirabayashi, S Ohya, K Seo, H Funakubo, A Matsuda, M Yoshimoto

    EUROPHYSICS LETTERS   71 ( 4 )   686 - 691   2005.8

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  • Metalorganic chemical vapor deposition of atomically flat SrRuO3 films on stepped SrTiO3 substrates

    A Sumi, K Takahashi, S Yokoyama, H Morioka, H Funakubo, M Yoshimoto

    APPLIED PHYSICS LETTERS   87 ( 5 )   052112   2005.8

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  • Micro-patterning of ZnO single crystal surface by anisotropic wet-chemical etching

    K Takahashi, H Funakubo, N Ohashi, H Haneda

    THIN SOLID FILMS   486 ( 1-2 )   42 - 45   2005.8

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  • Field-induced strain of (Pb, La)(Zr, Ti)O-3 epitaxial films grown by metal organic chemical vapor deposition

    Y Honda, S Yokoyama, H Funakubo, K Saito

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   120 ( 1-3 )   161 - 165   2005.7

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  • The effects of neodymium content and site occupancy on spontaneous polarization of epitaxial (Bi4-xNdx)Ti3O12 films

    T Watanabe, H Funakubo, M Osada, H Uchida, Okada, I

    JOURNAL OF APPLIED PHYSICS   98 ( 2 )   024110   2005.7

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  • Epitaxial Pt films with different orientations grown on (100)Si substrates by RF magnetron sputtering

    S Okamoto, T Watanabe, K Akiyama, S Kaneko, H Funakubo, S Horita

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 7A )   5102 - 5106   2005.7

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  • Structural modulation on multilayered bismuth cuprate observed by x-ray reciprocal space mapping

    S Kaneko, K Akiyama, Y Shimizu, H Yuasa, Y Hirabayashi, S Ohya, K Saito, H Funakubo, M Yoshimoto

    JOURNAL OF APPLIED PHYSICS   97 ( 10 )   103904   2005.5

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  • Domain structure control of (001)/(100)-oriented epitaxial Pb(Zr,Ti)O-3 films grown on (100)(c)SrRuO3/(100)SrTiO3 substrates

    YK Kim, H Morioka, R Ueno, S Yokoyama, H Funakubo

    APPLIED PHYSICS LETTERS   86 ( 21 )   212905   2005.5

  • Site Engineering Concept of Ferroelectric Thin Films

    FUNAKUBO Hiroshi, WATANABE Takayuki

    Journal of the Surface Science Society of Japan   26 ( 4 )   215 - 219   2005.4

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    A property design concept involving the substitution of each crystal site in the pseudoperovskite in Bi4Ti3O12 structure, a site-engineered concept, is proposed for Bi4Ti3O12-based thin films. This concept is based on the selective substitution of each crystal site contributing to the ferroelectric properties. By using this concept, a novel material, i.e., (Bi, Nd)4Ti3O12 was developed. A spontaneous polarization (Ps) value was 58 μC/cm2 beyond the single crystal data of Bi4Ti3O12. In addition, taking account of the realizable orientation of the film on (100)Si substrate, the expected remanent polarization (Pr) value of (Bi3.5Nd0.5)Ti3O12 film is almost the same with those of widely-used Pb(Zr0.35Ti0.65)O3 films.

    DOI: 10.1380/jsssj.26.215

    DOI: 10.7567/jjap.52.09ka10_references_DOI_IoMDNwMsXtaWUHy9QUqgz3Ywl2a

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  • Preparing Pb(Zr,Ti)O-3 films less than 100 nm thick by low-temperature metalorganic chemical vapor deposition

    A Nagai, H Morioka, G Asano, H Funakubo, A Saiki

    APPLIED PHYSICS LETTERS   86 ( 14 )   142906   2005.4

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  • Epitaxial growth of (100)-oriented beta-FeSi(2) thin films on insulating substrates

    K Akiyama, S Kaneko, T Kimura, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 4B )   2496 - 2501   2005.4

  • Polarization comparison of Pb(ZrTi)O-3 and Bi4Ti3O12-based ferroelectrics

    H Funakubo, T Watanabe, H Morioka, A Nagai, T Oikawa, M Suzuki, H Uchida, S Kouda, K Saito

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   118 ( 1-3 )   23 - 27   2005.4

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  • Epitaxial growth map for Bi4Ti3O12 films: a determining factor for crystal orientation

    T Watanabe, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 3 )   1337 - 1343   2005.3

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  • Selective reaction and chemical anisotropy in epitaxial bismuth layer-structured ferroelectric thin films

    T Watanabe, H Funakubo

    JOURNAL OF SOLID STATE CHEMISTRY   178 ( 1 )   64 - 71   2005.1

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  • Structural modulation in oxygen deficient epitaxial Bi2Sr2Ca1Cu2OX observed by X-ray reciprocal space mapping

    S Kaneko, K Akiyama, Y Shimizu, Y Hirabayashi, K Saito, T Kimura, H Funakubo, M Yoshimoto, S Ohya

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 1A )   156 - 157   2005.1

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  • PbTiO3 content dependence of crystal structure and electrical properties of (100)-/(001)-oriented epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 films grown by metalorganic chemical vapor deposition

    Shintaro Yokoyama, Satoshi Okamoto, Shoji Okamoto, Hiroshi Funakubo, Hirofumi Matsuda, Takashi Iijima, Keisuke Saito, Hirotake Okino, Takashi Yamamoto

    Jpn. J. Appl. Phys.   98   086112-1-3   2005

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  • Effects of Sample Geometry on Electric-Field-Induced Displacements in Pt/PZT/Pt/SiO2/Si System Investigated by Finite Element Method

    Hirotake Okino, K. Nakamura, Hirofumi, Matsuda Takashi Iijima Shintaro Yokoyama, Hiroshi Funakubo, Takashi Yamamoto

    Trans. Mater. Res. Soc. Jpn.   30   47 - 50   2005

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  • Thermal Stability of Epitaxial SrRuO3 Bottom Electrodes and Their Contribution to the Characteristics of (Ba0.5Sr0.5)TiO3 Films Grown on Them

    Shinichi Ito, Kenji Takahashi, Shoji Okamoto, I. P. Koutsaroff, Andrew Cervin-Lawry, J. Sakai, N. Ito, Hiroshi Funakubo

    Integ. Ferro.   77 ( No. )   3 - 11   2005

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    DOI: 10.1080/10584580500413616

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  • "Local epitaxial growth" of tetragonal (111)-oriented Pb(Zr,Ti)O-3 thin film

    H Kuwabara, A Sumi, S Okamoto, S Yokoyama, H Funakubo

    INTEGRATED FERROELECTRICS   75   3 - 9   2005

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  • Structural and electrical properties of polycrystalline Bi4-xNdxTi3O12 ferroelectric thin films with in-plane c-axis orientations

    H Matsuda, M Kurachi, H Uchida, T Watanabe, T Iijima, S Koda, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   44 ( 8-11 )   L292 - L294   2005

  • Comparison of electrical properties of (100)/(001)-oriented epitaxial Pb(Zr0.35,Ti0.65)O3 thin films with the same (001) domain fraction grown on (100)Si and (100)SrTiO3 substrates

    Yong Kwan, Kim, Hitoshi Morioka, Shoji Okamoto, Takayuki Watanabe, Shintaro Yokoyama Akihiro, Sumi Hiroshi Funakubo, Keisuke Saito

    Applied Physics Letters   87   182907   2005

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  • Enhancement of spontaneous polarization in lead zirconate titanate thin films by Dy3+ substitution

    Hiroshi Nakaki, Hiroshi Uchida Seiichiro Koda, Shoji Okamoto, Hiroshi Funakubo Ken, Nishida Takashi Katoda, Keisuke Saito

    Applied Physics Letters   87   182906   2005

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  • Epitaxial Pt Films with Different Orientations Grown on (100)Si Substrates by RF Magnetron Sputtering

    Shoji Okamoto, Takayuki Watanabe, Kensuke Akiyama, Satoru Kaneko, Hiroshi Funakubo Susumu Horita

    Japanese Journal of Applied Physics   44 ( 7A )   5102 - 5106   2005

  • Domain Distributions in Tetragonal Pb(Zr,Ti)O_3 Thin Films Probed by Polarized Raman Spectroscopy

    NISHIDA K.

    Applied Physics Letters   87   232902-1-3. - 232902.3   2005

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  • Perovskite Single Phase Growth of Epitaxial Pb(Zn1/3Nb2/3)O3 Films by Alternative-Source-Gas-Introduced Metalorganic Chemical Vapor Deposition

    Shintaro Yokoyama, Satoshi Okamoto, Keisuke Saito, Hiroshi Uchida, Seiichiro Koda, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   44 ( 48 )   L1452 - L1455   2005

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    DOI: 10.1143/jjap.44.L1452

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  • Domain structure control of (001)/(100)-oriented epitaxial Pb(Zr,Ti)O3 films grown on (100)cSrRuO3/(100)SrTiO3 substrates

    Yong Kwan Kim, Hitoshi Morioka, Risako Ueno, Shintaro Yokoyama, Hiroshi Funakubo

    Applied Physics Letters   86   212905 - 212905   2005

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    DOI: 10.1063/1.1938250

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  • Field-induced Strain of (Pb, La)(Zr, Ti)O3 Epitaxial Films Grown by Metal Organic Chemical Vapor Deposition

    Yoshihisa Honda, Shintaro Yokoyama, Hiroshi Funakubo, Keisuke Saito

    Materials Science and Engineering B   120   161 - 165   2005

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    DOI: 10.1016/j.mseb.2005.02.030

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  • Structural modulation on multilayered bismuth cuprate observed by x-ray reciprocal space mapping

    Satoru Kaneko, Kensuke Akiyama, Yoshitada Shimizu, Hiroyasu Yuasa, Yasuo Hirabayashi, Seishiro Ohya, Keisuke Saito, Hiroshi Funakubo, Mamoru Yoshimoto

    Journal of Applied Physics   97 ( No. )   103904   2005

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    DOI: 10.1063/1.1896441

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  • Polarization comparison of Pb(Zr, Ti)O3 and Bi4Ti3O12-based ferroelectrics

    Hiroshi Funakubo, Takayuki Watanabe, Hitoshi Morioka, Atsushi Nagai, Takahiro Oikawa, Muneyasu Suzuki, Hiroshi Uchida, Seiichiro Kouda, Keisuke Saito

    Materials Science and Engineering B   118 ( No. )   23 - 27   2005

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    DOI: 10.1016/j.mseb.2004.12.087

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  • Raman Spectroscopic Characterization of Tetragonal PbZrxTi1-xO3 Thin Films: A Rapid Evaluation Method for c-Domain Volume

    Ken Nishida Minoru, Osada Syunsyuke Wada, Shoji Okamoto Risako Ueno, Hiroshi Funakubo, Takashi Katoda

    Japanese Journal of Applied Physics   44 ( 25 )   L827-L829   2005

  • Effect of oxygen pressure on structural modulation observed by X-ray reciprocal space mapping in epitaxial bismuth cuprate superconducting film

    S. Kaneko, K. Akiyama, M. Mitsuhashi, Y. Hirabayashi, S. Ohya, K. Seo, H. Funakubo, A. Matsuda, M. Yoshimoto

    Europhysics Letters   71 ( 4 )   686 - 691   2005

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    DOI: 10.1209/epl/i2005-10128-9

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  • Orientation Dependence of Epitaxial and One-Axis-Oriented (Ba0.5Sr0.5)TiO3 Films Prepared by RF Magnetron Sputtering

    Shinichi Ito, Kenji, Takahashi Shoji, Okamoto Ivoyl, P. Koutsaroff, Andrew Cervin-Laury, Hiroshi Funakubo

    Japanese Journal of Applied Physics   44 ( 9B )   6881 - 6884   2005

  • Metalorganic chemical vapor deposition of atomically flat SrRuO3 films on stepped SrTiO3 substrates

    Akihiro Sumi, Kenji Takahashi, Shintaro Yokoyama, Hitoshi Morioka, Hiroshi Funakubo, Mamoru Yoshimoto

    Applied Physics Letters   87   052112 - 052112   2005

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    DOI: 10.1063/1.2006989

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  • MOCVD Growth of Bi1.5Zn1.0Nb1.5O7 (BZN) Epitaxial Thin Films and Their Electrical Properties

    Shingo Okaura, Muneyasu Suzuki, Shoji Okamoto, Hiroshi Uchida Seiichiro Koda, Hiroshi Funakubo

    Japanese Journal of Applied Physics   44 ( 9B )   6957 - 6959   2005

  • Electronic Structure of (Pb,La)(Zr,Ti)O3 Thin Film Probed by Soft-X-Ray Spectroscopy

    Tohru Higuchi Takeyo, Tsukamoto, Takeshi Hattori, Yoshihisa Honda, Shintaro Yokoyama, Hiroshi Funakubo

    Japanese Journal of Applied Physics   44 ( 9B )   6923 - 6926   2005

  • Enhancement of Polarization Property of PZT Film by Ion-Substitution Using Rare-Earth Elements

    Hiroshi Nakaki, Hiroshi, Uchida Ken, Nishida Minoru, Osada Hiroshi Funakubo Takashi Katoda Seiichiro Koda

    Japanese Journal of Applied Physics   44 ( 9B )   6905 - 6909   2005

  • Crystal Structure and Electrical Properties of Epitaxial BiFeO3 Thin Films Grown by Metal Organic Chemical Vapor Deposition

    Risako Ueno, Shingo Okaura, Hiroshi Funakubo, Keisuke Saito

    Japanese Journal of Applied Physics   44 ( 39 )   L1231-L1233   2005

  • Micro-patterning of ZnO single crystal surface by anisotropic wet-chemical etching

    Kenji Takahashi, Hiroshi Funakubo, Naoki Ohashi, Hajime Haneda

    Thin Solid Films   486   42 - 45   2005

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    DOI: 10.1016/j.tsf.2004.11.221

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  • MOCVD growth of epitaxial SrIrO3 films on (111)SrTiO3 substrates

    A. Sumi, Y. K. Kim, N. Oshima, K. Akiyama, K. Saito, H. Funakubo

    Thin Solid Films   486   182 - 185   2005

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    DOI: 10.1016/j.tsf.2004.11.244

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  • The effects of neodymium content and site occupancy on spontaneous polarization of epitaxial (Bi4-xNdx)Ti3O12 films

    Takayuki Watanabe, Hiroshi Funakubo Minoru, Osada Hiroshi Uchida Isao Okada

    Journal of Applied Physics   98   024110   2005

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  • Photoluminescence properties from beta-FeSi2 film epitaxially grown on Si, YSZ and Si//YSZ

    K Akiyama, S Kaneko, Y Terai, Y Maeda, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   44 ( 8-11 )   L303 - L305   2005

  • Structural and Electrical Properties of Polycrystalline Bi4-xNdxTi3O12 Ferroelectric Thin Films with in-Plane c-Axis Orientations

    Hirofumi Matsuda Masahiro Kurachi Hiroshi Uchida Takayuki Watanabe, Takashi Iijima Seiichiro Koda, Hiroshi Funakubo

    Japanese Journal of Applied Physics   44 ( 9 )   L292-L294   2005

  • Selective reaction and chemical anisotropy in epitaxial bismuth layer-structured ferroelectric thin films

    Takayuki Watanabe, Hiroshi Funakubo

    Journal of Solid State Chemistry   178   64 - 71   2005

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  • Effect of deposition temperature and post-heat-treatment condition on the characteristics of (100)-self-orientation LaNiO3 films prepared by RF magnetron sputter deposition

    K Takahashi, M Suzuki, T Oikawa, HD Chen, H Funakubo

    Materials, Integration and Packaging Issues for High-Frequency Devices II   833   35 - 40   2005

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  • Ion Modification for Improvement of Insulating and Ferroelectric Properties of BiFeO3 Thin Films Fabricated by Chemical Solution Deposition

    Hiroshi Uchida Risako Ueno, Hiroshi, Nakaki Hiroshi Funakubo Seiichiro Koda

    Japanese Journal of Applied Physics   44 ( 18 )   L561-L563   2005

  • Preparing Pb(Zr, Ti)O3 films less than 100 nm thich by low-temperature metalorganic chemical vapor deposition

    Atsushi Nagai, Hitoshi Morioka Gouji Asano, Hiroshi Funakubo, Atsushi Saiki

    Applied Physics Letters   86   142906   2005

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  • Epitaxial Growth Map for Bi4Ti3O12 Films: a Determining Factor for Crystal Orientation

    Takayuki Watanabe, Hiroshi Funakubo

    Japanese Journal of Applied Physics   44 ( 3 )   1337 - 1343   2005

  • Enhanced spontaneous polarization of dysprosium-substituted lead zirconate titanate thin films by a chemical solution deposition method

    H Uchida, H Nakaki, S Okamoto, S Yokoyama, H Funakubo, S Koda

    Materials and Processes for Nonvolatile Memories   830   331 - 336   2005

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  • Improvement of ferroelectric properties of lead zirconate titanate thin films by ion-substitution using rare-earth cations

    H Nakaki, H Uchida, S Okamoto, S Yokoyama, H Funakubo, S Koda

    Materials and Processes for Nonvolatile Memories   830   141 - 146   2005

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  • Structural Modulation in Oxygen Deficient Epitaxial Bi2Sr2Ca1Cu2Ox Observed by X-ray Reciproca Space Mapping

    Satoru Kaneko, Kensuke Akiyama, Yoshitada Shimizu, Yasuo Hirabayashi, Keisuke Saito, Takeshi Kimura, Hiroshi Funakubo, Mamoru Yoshimoto, Seishiro Ohya

    Japanese Journal of Applied Physics   44 ( 1A )   156 - 157   2005

  • Spontaneous polarization and crystal orientation control of MOCVD PZT and Bi4Ti3O12-based films

    H Funakubo

    FERROELECTRIC THIN FILMS   98   77 - 89   2005

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  • 希土類置換ビスマスフェライトの相転移挙動と強誘電特性

    内田寛, 安井伸太郎, 上野梨紗子, 舟窪浩, 幸田清一郎

    応用物理学会学術講演会講演予稿集   66th ( 2 )   2005

  • Step coverage and composition of Pb(Zr,Ti)O-3 capacitors prepared on sub-micron three-dimensional trench structure by metalorganic chemical vapor deposition

    A Nagai, G Asano, J Minamidate, CJ Choi, CR Cho, Y Park, H Funakubo

    MATERIALS AND PROCESSES FOR NONVOLATILE MEMORIES   830   77 - 82   2005

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  • Crystal structure and electrical properties of epitaxial BiFeO3 thin films grown by metal organic chemical vapor deposition

    R Ueno, S Okaura, H Funakubo, K Saito

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   44 ( 37-41 )   L1231 - L1233   2005

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  • Raman spectroscopic characterization of tetragonal PbZrxTi1-xO3 thin films: A rapid evaluation method for c-domain volume

    K Nishida, M Osada, S Wada, S Okamoto, R Ueno, H Funakubo, T Katoda

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   44 ( 24-27 )   L827 - L829   2005

  • “Dependence of Ferroelectric Properties on Thickness of BiFeO3 Thin Films Fabricated by Chemical Solution Deposition”

    Sushil K. Singh, Risako Ueno, Hiroshi Funakubo Hiroshi Uchida Seiichiro Koda, Hiroshi Ishiwara

    Jpn. J. Appl. Phys.   44 ( 12 )   8525 - 8527   2005

  • Perovskite single-phase growth of epitaxial Pb(Zn1/3Nb2/3)O-3 films by alternative-source-gas-introduced metalorganic chemical vapor deposition

    S Yokoyama, S Okamoto, K Saito, H Uchida, S Koda, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   44 ( 46-49 )   L1452 - L1455   2005

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  • Epitaxial Growth of (100)-Oriented β-FeSi2 Thin Film on Insulating Substrates

    Kensuke Akiyama, Satoru Kaneko, Takeshi Kimura, Hiroshi Funakubo

    Japanese Journal of Applied Physics   44 ( 4B )   2496 - 2501   2005

  • Ion modification for improvement of insulating and ferroelectric properties of BiFeO3 thin films fabricated by chemical solution deposition

    H Uchida, R Ueno, H Nakaki, H Funakubo, S Koda

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   44 ( 16-19 )   L561 - L563   2005

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  • Ruthenium and ruthenium oxide film deposition by MOCVD using Ru(DMPD) 2

    Kazuhisa Kawano, Hiroaki Kosuge, Noriaki Oshima, Hiroshi Funakubo

    ECS Transactions   1 ( 5 )   139 - 144   2005

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    DOI: 10.1149/1.2209263

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  • Effects of Sample Geometry on Electric-Field-Induced Displacements in Pt/PZT/Pt/SiO2/Si System Investigated by Finite Element Method

    Hirotake Okino, K. Nakamura, Hirofumi, Matsuda Takashi Iijima Shintaro Yokoyama, Hiroshi Funakubo, Takashi Yamamoto

    Trans. Mater. Res. Soc. Jpn.   30   47 - 50   2005

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  • Thermal stability of epitaxial SrRuO3 bottom electrodes and their contribution to the characteristics of (Ba0.5Sr0.5)TiO3 films grown on them

    S Ito, K Takahashi, S Okamoto, IP Koutsaroff, A Cervin-Lawry, J Sakai, N Ito, H Funakubo

    INTEGRATED FERROELECTRICS   77   3 - 11   2005

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  • Local Epitaxial Growth” of Tetragonal (111)-Oriented Pb(Zr,Ti)O3 Thin Film

    Hiroki Kuwabara, Akihiro Sumi, Shoji Okamoto, Shintaro Yokoyama, Hiroshi Funakubo

    Integ. Ferro.   75   3 - 9   2005

  • Photoluminescence Properties from β-FeSi2 Film Epitaxially Grown on Si, YSZ and Si//YSZ

    Kensuke Akiyama, Satoru Kaneko, Yoshikazu Terai Yoshihito Maeda, Hiroshi Funakubo

    Japanese Journal of Applied Physics   44 ( 10 )   L303-L305   2005

  • Dependence of electrical properties of epitaxial Pb(Zr,Ti)O3 thick films on crystal orientation and Zr/(Zr+Ti) ratio

    Shintaro Yokoyama, Yoshihisa Honda, Hitoshi Morioka, Shoji Okamoto, Takashi Iijima, Hirofumi Matsuda, Keisuke Saito, Takashi Yamamoto, Hirotake Okino, OSAMI SAKATA, Shigeru Kimura, Hiroshi Funakubo

    Journal of Applied Physics   98 ( No. )   094106   2005

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    DOI: 10.1063/1.2126156

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  • MOCVD growth of Bi-Zn-Nb-O thin films and their electrical

    Funakubo Hiroshi, Okaura Shingo, Suzuki Muneyasu, Okamoto Shoji, Uchida Hiroshi, Koda Seiichiro

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2005F   400 - 400   2005

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    DOI: 10.14853/pcersj.2005f.0.400.0

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  • Origin of Size-free Characteristics of Bismuth layer dielectric Film

    Funakubo Hiroshi, Kojima Takashi, watanabe Takayuki, takahashi Kenji, Suzuki Muneyasu, Sakashita Yukio, Oikawa Takahiro, Kato Kazumi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2005S   144 - 144   2005

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  • Spontaneous polarization change with Zr/(Zr plus Ti) ratios in perfectly polar-axis-orientated epitaxial tetragonal Pb(Zr,Ti)O-3 films

    H Morioka, S Yokoyama, T Oikawa, H Funakubo, K Saito

    APPLIED PHYSICS LETTERS   85 ( 16 )   3516 - 3518   2004.10

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  • Epitaxial Growth of β-FeSi_2 on Single Crystal Insulator

    AKIYAMA Kensuke, KANEKO Satoru, FUNAKUBO Hiroshi

    2004   826 - 827   2004.9

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  • Thickness scaling of polycrystalline Pb(Zr,Ti)O-3 films down to 35 nm prepared by metalorganic chemical vapor deposition having good ferroelectric properties

    T Oikawa, H Morioka, A Nagai, H Funakubo, K Saito

    APPLIED PHYSICS LETTERS   85 ( 10 )   1754 - 1756   2004.9

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  • Ferroelectric properties of dysprosium-substituted lead zirconate titanate thin films fabricated by chemical solution deposition

    H Nakaki, H Uchida, S Yokoyama, H Funakubo, S Koda

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   43 ( 9B )   6558 - 6561   2004.9

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    S Okamoto, S Yokoyama, Y Honda, G Asano, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   43 ( 9B )   6567 - 6570   2004.9

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    S Kaneko, Y Shimizu, K Akiyama, T Ito, M Mitsuhashi, S Ohya, K Saito, H Funakubo, M Yoshimoto

    APPLIED PHYSICS LETTERS   85 ( 12 )   2301 - 2303   2004.9

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    K Akiyama, S Ohya, H Funakubo

    THIN SOLID FILMS   461 ( 1 )   40 - 43   2004.8

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    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS   5 ( 4 )   431 - 435   2004.7

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    Journal of Materials Research   19 ( 6 )   1862 - 1868   2004.6

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  • Ferroelectric properties of an epitaxial lead zirconate titanate thin film deposited by a hydrothermal method below the Curie temperature

    T Morita, Y Wagatsuma, YS Cho, H Morioka, H Funakubo, N Setter

    APPLIED PHYSICS LETTERS   84 ( 25 )   5094 - 5096   2004.6

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  • Ferroelectric property of an epitaxial lead zirconate titanate thin film deposited by a hydrothermal method

    T Morita, Y Wagatsuma, H Morioka, H Funakubo, N Setter, Y Cho

    JOURNAL OF MATERIALS RESEARCH   19 ( 6 )   1862 - 1868   2004.6

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  • Charge-compensative ion substitution of La3+-substituted bismuth titanate thin films for enhancement of remanent polarization

    H Uchida, Okada, I, H Matsuda, T Iijima, T Watanabe, H Funakubo

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    K Akiyama, T Kimura, T Suemasu, F Hasegawa, Y Maeda, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   43 ( 4B )   L551 - L553   2004.4

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  • Effect of buffer layer on epitaxial growth of YSZ deposited on Si substrate by slower Q-switched 266 nm YAG laser

    S Kaneko, K Akiyama, Y Shimizu, T Ito, S Yasaka, M Mitsuhashi, S Ohya, K Saito, T Watanabe, S Okamoto, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   43 ( 4A )   1532 - 1535   2004.4

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  • Composition and orientation dependence of electrical properties of epitaxial Pb(ZrxTi1-x)O-3 thin films grown using metalorganic chemical vapor deposition

    T Oikawa, M Aratani, H Funakubo, K Saito, M Mizuhira

    JOURNAL OF APPLIED PHYSICS   95 ( 6 )   3111 - 3115   2004.3

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  • Spontaneous polarization of neodymium-substituted Bi4Ti3O12 estimated from epitaxially grown thin films with in-plane c-axis orientations

    T Watanabe, T Kojima, H Uchida, Okada, I, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   43 ( 2B )   L309 - L311   2004.2

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  • Property improvement of MOCVD-PZT films deposited below 400 degrees C.

    H Funakubo, G Asano, A Nagai, H Morioka, S Yokoyama, T Shibutami, N Oshima, K Akiyama

    FERROELECTRIC THIN FILMS XII   784 ( C4.3 )   115 - 120   2004

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  • Growth of pyrochlore Bi2Ti2O7 epitaxial films and their electrical characterization

    M Suzuki, T Watanabe, T Takenaka, H Funakubo

    INTEGRATED FERROELECTRICS   67   201 - 209   2004

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  • Comparison study of (001)-/(100)-oriented epitaxial and fiber-textured Pb(Zr,Ti)O-3 thick films prepared by MOCVD

    S Yokoyama, Y Honda, H Morioka, S Okamoto, T Iijima, H Matsuda, K Saito, H Funakubo

    INTEGRATED FERROELECTRICS   64   217 - 225   2004

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  • Growth of Epitaxial -FeSi2 Thin Film on Si(001) by Metal-Organic Chemical Vapor Deposition

    Kensuke Akiyama, Takeshi Kimura, Takashi Suemasu Fumio, Hasegawa Yoshihito Maeda, Hiroshi Funakubo

    Jpn. J. Appl. Phys   43 ( 4B )   L551-L553   2004

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    H Funakubo, G Asano, T Ozeki, H Machida, T Yoneyama, Y Takamatsu

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY   151 ( 7 )   C463 - C467   2004

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  • Ferroelectric property of an epitaxial lead zirconate titanate thin film deposited by a hydrothermal method

    Takeshi Morita, Yasuo Wagatsuma, Hitoshi Morioka, Hiroshi Funakubo Nava Setter, Yasuo Cho

    J. Mater. Res   19 ( 6 )   1862 - 1868   2004

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    FERROELECTRIC THIN FILMS XII   784 ( C4.3 )   115 - 120   2004

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  • Growth of epitaxial tetragonal Pb(ZrTi)O-3 thin films with 100% polar-axis-orientation and their electrical properties

    H Morioka, S Yokoyama, T Oikawa, K Saito, H Funakubo

    FERROELECTRIC THIN FILMS XII   784 ( C6.2 )   429 - 434   2004

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  • Ferroelectric property of an epitaxial lead zirconate titanate thin film deposited by a hydrothermal method

    Takeshi Morita, Yasuo Wagatsuma, Yasuo Cho, Hitoshi Morioka, Hiroshi Funakubo, Setter Nava

    Mater. Res. Soc. Proc   784   C11.31.1-C11.31.6   2004

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    Takeshi Morita, Yasuo Wagatsuma, Yasuo Cho, Hitoshi Morioka, Hiroshi Funakubo Nava Sette

    Appl. Phys. Lett.   84 ( 25 )   5094 - 5096   2004

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  • Synthesis and Properties of Nd-substituted Bismuth Titanate Polycrystalline Thin Films with Polar-axis Orientation

    Masahiro Kurachi, Hirofumi Matsuda Takashi Iijima Hiroshi Uchida Seiichiro Koda, Takayuki Watanabe, Hiroshi Funakubo

    Key. Eng. Mater   269   53 - 56   2004

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  • Electrical properties of beta-FeSi2 thin films on insulating substrates

    K Akiyama, T Kimura, S Nishiyama, T Hattori, N Ohashi, H Funakubo

    CRITICAL INTERFACIAL ISSUES IN THIN-FILM OPTOELECTRONIC AND ENERGY CONVERSION DEVICES   796 ( V2.10 )   121 - 126   2004

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  • Self-organized one-axis-oriented PZT films with nano-domain structure

    Hiroshi Funakubo, Shintaro Yokoyama Tomohiko Ozeki, Atsushi Nagai, Takahiro Oikawa

    Science and Technology of Advanced Materials   5   431 - 435   2004

  • Preparation of -FeSi2 thin film by metal organic chemical vapor deposition using iron-carbonyl and mono-silane

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    J. Mater. Res   Vol.19 ( 6 )   1862 - 1868   2004

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    Appl. Phys. Lett   85 ( 12 )   2301 - 2303   2004

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  • Thickness scaling of polycrystalline Pb(Zr, Ti)O3 films down to 35 nm prepared by metalorganic chemical vapor deposition having good ferroelectric properties

    Takahiro Oikawa, Hitoshi Morioka, Atsushi Nagai, Hiroshi Funakubo, Keisuke Saito

    Appl. Phys. Lett   85 ( 10 )   1754 - 1756   2004

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  • Spontaneous polarization change with Zr/(Zr+Ti) ratios in perfectly polar-axis-orientated epitaxial tetragonal Pb(Zr,Ti)O3 films

    Hitoshi Morioka, Shintaro Yokoyama, Takahiro Oikawa, Hiroshi Funakubo, Keisuke Saito

    Appl. Phys. Lett   85 ( 16 )   3516 - 3518   2004

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  • Ferroelectric Properties of Dysprosium-Substituted Lead Zirconate Titanate Thin Films Fabricated by Chemical Solution Deposition

    Hiroshi Nakaki, Hiroshi Uchida Shintaro Yokoyama, Hiroshi Funakubo, Seiichiro Koda

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  • Synthesis and Properties of Nd-substituted Bismuth Titanate Polycrystalline Thin Films with Polar-axis Orientation

    Masahiro Kurachi, Hirofumi Matsuda Takashi Iijima Hiroshi Uchida Seiichiro Koda, Takayuki Watanabe, Hiroshi Funakubo

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    DOI: 10.3131/jvsj.47.581

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  • Recent development in the preparation of ferroelectric thin films by MOCVD

    H Funakubo

    FERROELECTRIC RANDOM ACCESS MEMORIES FUNDAMENTALS AND APPLICATIONS   93   95 - 103   2004

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  • Comparison of the Ferroelectricity for 70-80 nm Thick Pb(Zr, Ti)O3 Films Deposited on (111)Ir Bottom Electrodes at Different Temperatures by MOCVD

    Atsushi Nagai, Hitoshi Morioka, Gouji Asano, A. Saiki, Hiroshi Funakubo

    Integrated Ferroelectrics   68   147 - 154   2004

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    DOI: 10.1080/10584580490895851

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  • Effect of thermal strain on domain fraction in a-/b-axis-oriented epitaxial Bi4Ti3O12 films

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    FERROELECTRIC THIN FILMS XII   784 ( C4.2 )   109 - 114   2004

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    Journal of The Electrochemical Society,   151 ( 11 )   C698-C701   2004

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    DOI: 10.1149/1.1802152

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    Integrated Ferroelectrics   67   201 - 209   2004

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    DOI: 10.1080/10584580490899082

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  • Comparison Study of (001)-/(100)-Oriented Epitaxial and Fiber-Textured Pb(Zr,Ti)O3 Thick Films Prepared by MOCVD

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    Journal of The Electrochemical Society   151 ( 7 )   C463-C467   2004

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    DOI: 10.14853/pcersj.2004f.0.138.0

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    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2004F   137 - 137   2004

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    DOI: 10.14853/pcersj.2004f.0.137.0

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    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2004F   586 - 586   2004

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    DOI: 10.14853/pcersj.2004f.0.586.0

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  • Direct Measurement of Spontanious polarization of Tetragonal PZT Using Perfectly Polar-axis Oriented Films

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    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2004S   36 - 36   2004

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    DOI: 10.14853/pcersj.2004s.0.36.0

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  • Development of c-axis oriented Bi-layer structured compound films for thin film capacitors

    Sakashita Yukio, Oikawa Takahiro, Kojima Takashi, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2004F   163 - 163   2004

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    DOI: 10.14853/pcersj.2004f.0.163.0

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  • Microfabrication of Zinc oxide surface by wet etching technique

    Takahashi Kenji, Ohashi Naoki, Sakaguchi Isao, Hishita Shunichi, Funakubo Hiroshi, Haneda Hajime

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2004S   47 - 47   2004

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    DOI: 10.14853/pcersj.2004s.0.47.0

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  • MOCVD Preparation of Multicomponent Oxide Dielectrics

    Funakubo Hiroshi, Watanabe Takayuki, Yokoyama Shintaro, Takahashi Kenji, Suzuki Muneyasu, Nagai Ashushi, Okamoto Shoji, Okamoto Satoshi, Honda Yoshihisa

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2004F   127 - 127   2004

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    DOI: 10.14853/pcersj.2004f.0.127.0

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  • Crystal Structure and Electrical Properties of Epitaxial PZT Films Grown by MOCVD

    Yokoyama Shintaro, Honda Yoshihisa, Morioka Hitoshi, Okamoto Shoji, Sumi Akihiro, Iijima Takashi, Matsuda Hirofumi, Saito Keisuke, Yamamoto Takashi, Okino Hirotake, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2004F   135 - 135   2004

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    DOI: 10.14853/pcersj.2004f.0.135.0

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  • Preparation of 3D-structured PZT capacitors and their step coverage

    Nagai Atsushi, Asano Gouji, Park Young Soo, Shin Sang Min, Kim Suk Pil, Koo June Mo, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2004F   141 - 141   2004

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    DOI: 10.14853/pcersj.2004f.0.141.0

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  • Good ferroelectricity of Pb(Zr,Ti)O-3 thin films fabricated by highly reproducible deposition on bottom Ir electrode at 395 degrees C (vol 42, pg 1085, 2003)

    G Asano, T Oikawa, H Funakubo, K Saito

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   42 ( 11A )   L1346 - L1346   2003.11

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  • Good ferroelectricity of Pb(Zr,Ti)O-3 thin films fabricated by highly reproducible deposition on bottom Ir electrode at 395 degrees C

    G Asano, T Oikawa, H Funakubo, K Saito

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   42 ( 9AB )   L1083 - L1086   2003.9

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  • Characterization of hafnium oxide thin films by source gas pulse introduced metalorganic chemical vapor deposition, using amino-family Hf precursors

    S Hino, M Nakayama, K Takahashi, H Funakubo, E Tokumitsu

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   42 ( 9B )   6015 - 6018   2003.9

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  • Ruthenium film with high nuclear density deposited by MOCVD using a novel liquid precursor

    T Shibutami, K Kawano, N Oshima, S Yokoyama, H Funakubo

    ELECTROCHEMICAL AND SOLID STATE LETTERS   6 ( 9 )   C117 - C119   2003.9

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  • Good ferroelectricity of Pb(Zr,Ti)O-3 thin films fabricated by highly reproducible deposition on bottom Ir electrode at 395 degrees C

    G Asano, T Oikawa, H Funakubo, K Saito

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   42 ( 9AB )   L1083 - L1086   2003.9

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  • Large piezoelectric response in (111)-oriented epitaxial Pb(Zr,Ti)O-3 films consisting of mixed phases with rhombohedral and tetragonal symmetry

    S Yokoyama, Y Honda, H Morioka, T Oikawa, H Funakubo, T Iijima, H Matsuda, K Saito

    APPLIED PHYSICS LETTERS   83 ( 12 )   2408 - 2410   2003.9

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  • Synthesis and electrical properties of Sr- and Nb-cosubstituted Bi4-xSrxTi3-xNbxO12 polycrystalline thin films

    H Matsuda, T Iijima, H Uchida, Okada, I, T Watanabe, H Funakubo, M Osada, M Kakihana

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   42 ( 8A )   L949 - L952   2003.8

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  • Crystal structure analysis of metalorganic chemical vapor deposition-beta-FeSi2 thin film by X-ray diffraction measurement

    T Kimura, K Akiyama, T Watanabe, K Saito, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   42 ( 8 )   4943 - 4948   2003.8

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  • MOCVD法による強誘電体薄膜の形成—〔機能材料〕創刊22周年特集 強誘電体メモリーの動向と展望

    舟窪 浩, 渡辺 隆之, 酒井 朋裕

    機能材料   23 ( 8 )   13 - 21   2003.8

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  • Substrate effect on the crystal structure and ferroelectricity of low-temperature-deposited Pb(Zr, Ti)O-3 thin films by metalorganic chemical vapor deposition

    K Tokita, M Aratani, H Funakubo

    APPLIED PHYSICS LETTERS   82 ( 23 )   4122 - 4124   2003.6

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  • Large remanent polarization of 100% polar-axis-oriented epitaxial tetragonal Pb(Zr0.35Ti0.65)O-3 thin films

    H Morioka, G Asano, T Oikawa, H Funakubo, K Saito

    APPLIED PHYSICS LETTERS   82 ( 26 )   4761 - 4763   2003.6

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  • Preparation of hafnium oxide films from oxygen-free Hf[N(C2H5)(2)](4) precursor and their properties

    K Takahashi, M Nakayama, S Yokoyama, T Kimura, E Tokumitsu, H Funakubo

    APPLIED SURFACE SCIENCE   216 ( 1-4 )   296 - 301   2003.6

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  • Highly-reproducible preparation of Pb(Zr, Ti)O-3 films at low deposition temperature by metal organic chemical vapor deposition

    G Asano, T Oikawa, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   42 ( 5A )   2801 - 2804   2003.5

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  • Crystal structure and ferroelectric property of tungsten-substituted Bi4Ti3O12 thin films prepared by metal-organic chemical vapor deposition

    T Sakai, T Watanabe, M Osada, M Kakihana, Y Noguchi, M Miyayama, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   42 ( 5A )   2850 - 2852   2003.5

  • Property design of Bi4Ti3O12-based thin films using a site-engineered concept

    H Funakubo, T Watanabe, T Kojima, T Sakai, Y Noguchi, M Miyayama, M Osada, M Kakihana, K Saito

    JOURNAL OF CRYSTAL GROWTH   248   180 - 185   2003.2

  • Quantitative effects of preferred orientation and impurity phases on ferroelectric properties of SrBi2(Ta1-xNbx)(2)O-9 thin films measured by X-ray diffraction reciprocal space mapping

    K Saito, Yamaji, I, T Akai, M Mitsuya, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   42 ( 2A )   539 - 543   2003.2

  • Ferroelectric properties of lanthanide-substituted Bi4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition

    T Kojima, T Watanabe, H Funakubo, K Saito, M Osada, M Kakihana

    JOURNAL OF APPLIED PHYSICS   93 ( 3 )   1707 - 1712   2003.2

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  • Effect of La substitution on electrical properties of highly oriented Bi4Ti3O12 films prepared by metalorganic chemical vapor deposition

    T Sakai, T Watanabe, H Funakubo, K Saito, M Osada

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   42 ( 1 )   166 - 169   2003.1

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  • Structural characterization and 90 degrees domain contribution to ferroelectricity of epitaxial Pb(Zr-0.35,Ti-0.65)O-3 thin films

    K Saito, T Kurosawa, T Akai, T Oikawa, H Funakubo

    JOURNAL OF APPLIED PHYSICS   93 ( 1 )   545 - 550   2003.1

  • Domain Structure of Epitaxial Pb(Zrx,Ti1-x)O3 Thin Films With MPB Composition

    Keisuke Saito, Toshiyuki Kurosawa, Takao Akai, Shintaro Yokoyama, Takahiro Oikawa, Hitoshi Morioka, Hiroshi Funakubo

    Int.Symp. Integ. Ferro   9.1.3-C   434 - 435   2003

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  • Growth Of Epitaxial Site-Engineered Bi4Ti3O12-Based Thin Films by MOCVD and Their Characterization

    Hiroshi Funakubo, Tomohiro, Sakai Takayuki Watanabe Minoru, Osada Masato Kakihana Keisuke Saito, Yuji Noguchi, Masaru Miyayama

    Proc. Mater. Res. Soc.   748 ( U2.2 )   63 - 68   2003

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  • Ferroelectric Properties of Lanthanide-Substituted Bi4Ti3O12 Epitaxial Thin Films Grown by Metalorganic Chemical Vapor Deposition

    Takashi Kojima, Takayuki Watanabe, Hiroshi Funakubo Keisuke, Saito Minoru, Osada Masato Kakihana

    J. Appl. Phys.   93 ( 3 )   1707 - 1712   2003

  • Property Design of Bi_4Ti_3O_<12>-Based Thin Films Using a Site-Engineered Concept

    舟窪 浩

    J.Crystal Growth 248   248   180 - 185   2003

  • Enhancement of remanent polarization of BIT-based thin films by Ti-site substitution using ions with higher charge valences

    H Uchida, Okada, I, H Matsuda, T Iijima, T Watanabe, H Funakubo

    FERROELECTRIC THIN FILMS XI   748 ( U12.1.1-U12.1.11 )   87 - 97   2003

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  • Characterization of Epitaxial Pb(Zrx,Ti1-x)O3 Thin Films with Composition near the Morphotropic Phase Boundary

    Keisuke Saito, Toshiyuki Kurosawa, Takao Akai, Shintaro Yokoyama, Hitoshi Morioka, Takahiro Oikawa, Hiroshi Funakubo

    Proc. Mater. Res. Soc.   748 ( U13.4.1-U13.4.6 )   399 - 404   2003

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  • Novel candidate of c-axis-oriented BLSF thin films for high-capacitance condenser

    T Kojima, Y Sakashita, T Watanabe, K Kato, H Funakubo

    FERROELECTRIC THIN FILMS XI   748 ( U15.2 )   451 - 456   2003

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  • 全MOCVDによるRuO2/PZT/RuO2キャパシタの低温合成とその特性評価

    舟窪浩, 浅野剛司, 森岡仁, 横山信太郎, 渋多美哲也, 大島憲明

    第23回電子材料研究討論会   ( 2A-04 )   35   2003

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  • Effect of Solvent on the Deposition Behavior of MOCVD-Pb(Zr,Ti)O3 Films Using Liquid-Deliver Source Supply System

    Hiroshi Funakubo, Gouji, Asano Tomihiko Ozeki, Hideaki Machida Takeo Yoneyama, Yukichi Takamatsu

    Electrochem. Soc. Proc.   8   1411 - 1418   2003

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  • Characterization of PLZT Thick Film Prepared by MOCVD

    Yoshihisa Honda, Shintaro Yokoyama, Hiroshi Funakubo

    Trans. Mat. Res. Soc. Jpn.   28 ( 1 )   157 - 160   2003

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  • Characterization of epitaxial Pb(Zr-x,Ti1-x)O-3 thin films with composition near the morphotropic phase boundary

    K Saito, T Kurosawa, T Akai, S Yokoyama, H Morioka, T Oikawa, H Funakubo

    FERROELECTRIC THIN FILMS XI   748 ( U13.4.1-U13.4.6 )   399 - 404   2003

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  • Growth Of Epitaxial Site-Engineered Bi4Ti3O12-Based Thin Films by MOCVD and Their Characterization

    Hiroshi Funakubo, Tomohiro, Sakai Takayuki Watanabe Minoru, Osada Masato Kakihana Keisuke Saito, Yuji Noguchi, Masaru Miyayama

    Proc. Mater. Res. Soc.   748 ( U2.2 )   63 - 68   2003

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  • Structural Characterization and 90° Domain Contribution to Ferroelectricity of Epitaxial Pb(Zr0.35,Ti0.65)O3 Thin Films

    Keisuke Saito Toshiyuki Kurosawa, Takao Akai, Takahiro Oikawa, Hiroshi Funakubo

    J. Appl. Phys.   93 ( 1 )   545 - 550   2003

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  • Crystal Structure Analysis of Metalorganic Chemical Vapor Deposition-β-FeSi2 Thin Film by X-ray Diffraction Measurement

    Takeshi Kimura, Kensuke Akiyama, Takayuki Watanabe, Keisuke Saito, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   42, 1 ( 8 )   4943 - 4948   2003

  • X-ray Photoelectron and UV Photoyield Spectroscopic Studies on SrxBiyTa2O9 Films

    M. Takahashi, K. Kodama, M. Noda, M. Okuyama, Takayuki Watanabe, Hiroshi Funakubo

    Journal of Korean Physical Society,   42   S1399-S1403   2003

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  • Piezoelectric Properties of Lanthanum Modified Bi3TiTaO9 Ceramics

    Muneyasu Suzuki, Hajime Nagata, Hiroshi Funakubo, Tadashi Takenaka

    Key Eng. Mater.   248   11 - 14   2003

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  • Investigation of Gas-Phase Reaction Effective on Deposition Behavior in MOCVD-Pb(Zr,Ti)O3 Film Using In-Situ-Monitored by Fourier Transform Infrared Spectroscopy

    Gouji Asano, Tsukasa Satake Kunio, Ohtsuki, Hiroshi Funakubo

    Electrochem. Soc. Proc.   8   471 - 478   2003

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  • Change of Domain Structure and Characteristics of Epitaxial Pb(ZrxTi1-x)O3 Films with Decreasing Film Thickness Down to 100nm

    Hitoshi Morioka, Shintaro Yokoyama, Takahiro Oikawa, Keisuke Saito, Hiroshi Funakubo

    11th US-Japan Seminar on Dielectric and Piezoelectric Ceramics   2003

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  • Advanced X-ray Analysis of Ferroelectrics

    Keisuke Saito, Toshiyuki Kurosawa, Takao Akai, Shintaro Yokoyama, Hitoshi Morioka, Hiroshi Funakubo

    POLAR OXIDES PROPERTIES, CHARACTERIZATION AND IMAGING   2003

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  • Low Temperature Deposition of Ruthenium Films Using Novel MOCVD Precursors

    Noriaki Oshima Tetsuo, Shibutami kazuhisa Kawano, Shintaro yokoyama Hiiroshi Funakubo

    The Electrochemical Society 203rd Meeting   PS-61   2146   2003

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  • Investigation of Gas-phase Reaction Effect on Deposition Behavior in MOCVD-Pb(Zr,Ti)O3 Film Using in-situ Monitored by Fourier Transform Infrared Spectroscopy

    Gouji Asano, Tsukasa, Satake Kunihiro, Ohtsuki, Hiroshi Funakubo

    The Electrochemical Society 203rd Meeting   PS-61   2169   2003

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  • Property Design of Bi4Ti3O12-Based Thin Films Using a Site-Engineering Concept

    Hiroshi Funakubo, Takayuki Watanabe, Takashi, Kojima Tomohiro, Sakai Yuji Noguchi, Masaru Miyayama Minoru, Osada Keisuke Saito

    Technical Rep.   ( IEICESDM-265 )   19 - 24   2003

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  • HfO2 Thin Films with Low Residua Impurity Concentrations Grown on Si Substrates by Metal-Organic Chemical Vapor Deposition Using Hf(O-t-C4H9)4 and H2O

    Eisuke Tokumitsu, K. Takahashi, M. Nakayama, S. Hino, Hiroshi Funakubo

    The IEEE 2003 International Meeting for Future of Electron Devices   ( E-3 )   2003

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  • Crystal Orientation Dependence of Field-induced Strain for Epitaxial PZT Thick Films Grown by MOCVD

    Shintaro Yokoyama, Yoshihisa Honda, Hitoshi Morioka, Takahiro Oikawa, Tadashi Iijima Hirofumi, Matsuda Keisuke Saito, Hiroshi Funakubo

    11th US-Japan Seminar on Dielectric and Piezoelectric Ceramics   2003

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  • Farrication of Ion-cosubstituted Bismuth Titanate Thin films by Chemical Solution Deposition Method

    Hiroshi Uchida Isao Okada, Hifumi Matsuda Takashi iijima, Takayuki Watanabe, Hiroshi Funakubo

    Int. Symp. Integ. Ferro   10.1.7.-C   486 - 487   2003

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  • Ferreoelectric and PiezoelectricPiezoelectric Properties of (100)-/(001)-Oriented Pb(Zr,Ti)O3 Thick Films Prepared by Metal Organic Chemical Vapor Deposition

    Shintaro Yokoyama, Yoshihisa Honda, Takashi Iijima Hirofumi, Matsuda, Hiroshi Funakubo

    Int. Symp. Integ. Ferro   8.1.7-C   384 - 385   2003

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  • Quantitative Effects of Preferred Orientation and Impurity Phases on Ferroelectric Properties of SrBi2(Ta1-xNbx)2O9 Thin Films by X-Ray Diffraction Reciprocal Space Mapping,

    Keisuke Saito, Isao, Yamaji, Takao Akai, Masatoshi Mitsuya, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   42 ( 2A )   539 - 543   2003

  • Growth of Hafnium Oxide Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Free Hf[N(C2H5)2]4 Precursor and Their Properties

    Kenji Takahashi, Makoto Nakayama, Shiro Hino, Eisuke Tokumitsu, Hiroshi Funakubo

    Integrated Ferroelectrics   57   1185 - 1192   2003

  • Bi2Sr2Ca1Cu2OX thin film deposition by q-switched YAG laser

    Satoru Kaneko, Yoshitada Shimizu, Hiroyasu Yuasa, Masahiko Mitsuhashi, Seishiro Ohya, Keisuke Saito, Kenji Takahashi, Takeshi Kimura, Hiroshi Funakubo

    Shinku/Journal of the Vacuum Society of Japan   46 ( 5 )   453 - 456   2003

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    Language:English   Publisher:Vacuum Society of Japan  

    DOI: 10.3131/jvsj.46.453

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  • Highly-Reproducible Preparation of Pb(Zr, Ti)O3 Films at Low Deposition Temperature by Metal Organic Chemical Vapor Deposition

    Gouji Asano, Takahiro Oikawa, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   42 ( 5A )   2801 - 2804   2003

  • Effect of Solvent on the Deposition Behavior of MOCVD-Pb(Zr,Ti)O3 Films Using Liquid-Deliver Source Supply System

    Hiroshi Funakubo, Gouji, Asano Tomihiko Ozeki, Hideaki Machida Takeo Yoneyama, Yukichi Takamatsu

    Electrochem. Soc. Proc.   8   1411 - 1418   2003

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  • Characterization of PLZT Thick Film Prepared by MOCVD

    Yoshihisa Honda, Shintaro Yokoyama, Hiroshi Funakubo

    Trans. Mat. Res. Soc. Jpn.   28 ( 1 )   157 - 160   2003

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  • A novel ruthenium precursor for MOCVD without seed ruthenium layer

    T Shibutami, K Kawano, N Oshima, S Yokoyama, H Funakubo

    FERROELECTRIC THIN FILMS XI   748   111 - 116   2003

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  • 化学溶液法によるランタノイド置換PZT薄膜の作製と評価

    中木寛, 内田寛, 幸田清一郎, 松田弘文, 飯島高志, 舟窪浩

    第64回応用物理学会学術講演会   1p-V-3   497   2003

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  • 強誘電体薄膜の歪み-電圧特性から正確な圧電定数を求める測定条件

    沖野裕丈, 松田弘文, 飯島高志, 横山信太郎, 舟窪浩 山本孝

    第64回応用物理学会学術講演会   1a-V-8   496   2003

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  • エピタキシャルPLZT厚膜の圧電性に及ぼす結晶方位の効果

    本田佳久, 横山信太郎, 舟窪浩

    第64回応用物理学会学術講演会   2a-V-3   504   2003

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  • MOCVD合成エピタキシャルPZT厚膜の電界誘起歪みの結晶方位および組成依存性

    横山信太郎, 本田佳久, 森岡仁, 飯島高志, 松田弘文, 斎藤啓介, 舟窪浩

    第64回応用物理学会学術講演会   2a-V-2   503   2003

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  • a軸優先配向エピタキシャル正方晶PZT薄膜の作製と評価

    森岡仁, 永井篤史, 横山信太郎, 本田佳久, 岡本庄司, 渡辺隆之, 斎藤啓介, 舟窪浩

    第64回応用物理学会学術講演会   2a-V-1   503   2003

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  • 水熱合成法によるエピタキシャルPZT薄膜の強誘電特性の測定

    森田剛, 我妻康夫, 森岡仁, 舟窪浩, NAVASetter 長康雄

    第64回応用物理学会学術講演会   1p-V-7   499   2003

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  • MOCVD法合成Bi4Ti3O12基薄膜の(100)Si基板上での配向制御

    渡辺隆之, 岡本庄司, 舟窪浩

    第64回応用物理学会学術講演会   31a-V-7   492   2003

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  • パイロクロア構造酸化物薄膜のエピタキシャル成長とその電気特性評価

    鈴木宗泰, 渡辺隆之, 竹中正 舟窪浩

    第64回応用物理学会学術講演会   31a-T-8   488   2003

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  • Advanced X-ray Analysis of Ferroelectrics

    Keisuke Saito, Toshiyuki Kurosawa, Takao Akai, Shintaro Yokoyama, Hitoshi Morioka, Hiroshi Funakubo

    POLAR OXIDES PROPERTIES, CHARACTERIZATION AND IMAGING   2003

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  • Characterization of HfO_2 Thin Films Grown on Silicon Substrates by Source Gas Pulse-Introduced MOCVD for Gate-Insulator Applications

    Nakayama Makoto, Takahashi Kenji, Hino Shiro, Funakubo Hiroshi, Tokumitsu Eisuke

    Proceedings of the IEICE General Conference   2003 ( 2 )   66 - 66   2003

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  • MOCVD合成エピタキシャルBi層状構造化合物(m=4)薄膜の電気的特性

    及川貴弘, 小嶌隆志, 坂下幸雄, 舟窪浩

    第64回応用物理学会学術講演会   31a-V-10   493   2003

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  • Crystal Orientation Dependence of Field-induced Strain for Epitaxial PZT Thick Films Grown by MOCVD

    Shintaro Yokoyama, Yoshihisa Honda, Hitoshi Morioka, Takahiro Oikawa, Tadashi Iijima Hirofumi, Matsuda Keisuke Saito, Hiroshi Funakubo

    11th US-Japan Seminar on Dielectric and Piezoelectric Ceramics   2003

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  • Change of Domain Structure and Characteristics of Epitaxial Pb(ZrxTi1-x)O3 Films with Decreasing Film Thickness Down to 100nm

    Hitoshi Morioka, Shintaro Yokoyama, Takahiro Oikawa, Keisuke Saito, Hiroshi Funakubo

    11th US-Japan Seminar on Dielectric and Piezoelectric Ceramics   2003

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  • YSZ(111)基板を用いたβ-FeSi2(202)/(220)ドメイン制御

    秋山賢輔, 木村武, 金子智, 寺井慶和, 前田佳均, 舟窪浩

    第64回応用物理学会学術講演会   1p-ZB-11   1238   2003

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  • Effect of La Substitution on Electrical Properties of Highly Oriented Bi4Ti3O12 Films Prepared by Metalorganic Chemical Vapor Deposition,

    Tomohiro Sakai, Takayuki Watanabe, Hiroshi Funakubo, Keisuke Saito, Minoru Osada

    Jpn. J. Appl. Phys.   42 ( 1 )   166 - 169   2003

  • サイトエンジニアリングコンセプトを用いたBi_4Ti_3O_<12>基薄膜特性の設計

    舟窪浩

    電子情報通信学会研究報告   ( IEICESDM-265 )   19 - 24   2003

  • Large Remanent Polarization of 100% Polar-Axis-Oriented Epitaxial Tetragonal Pb(Zr0.35Ti0.65)O_3_ Thin Films

    Hitoshi Morioka, Gouji Asano, Takahiro Oikawa, Hiroshi Funakubo, Keisuke Saito

    Appl. Phys. Lett.   82 ( 26 )   4761 - 4763   2003

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    DOI: 10.1063/1.1586993

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  • HfO2 Thin Films with Low Residua Impurity Concentrations Grown on Si Substrates by Metal-Organic Chemical Vapor Deposition Using Hf(O-t-C4H9)4 and H2O

    Eisuke Tokumitsu, K. Takahashi, M. Nakayama, S. Hino, Hiroshi Funakubo

    The IEEE 2003 International Meeting for Future of Electron Devices   ( E-3 )   2003

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  • MOCVD法によるステップ構造を有する超平坦SrRuO3薄膜の作製と評価

    角章弘, 横山信太郎, 森岡仁, 吉本護, 舟窪浩

    第64回応用物理学会学術講演会   2p-V-5   508   2003

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  • Si基板上でのエピタキシャル強誘電体薄膜の配向制御法の確立

    岡本庄司, 渡辺隆之, 森岡仁, 横山信太郎, 秋山賢輔, 村中一樹, 堀田將, 舟窪浩

    第64回応用物理学会学術講演会   2a-V-8   505   2003

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  • 3次元構造FeRAMを目指したPZT薄膜のMOCVD合成

    永井篤史, 森岡仁, 浅野剛司, 舟窪浩

    第64回応用物理学会学術講演会   2a-V-5   504   2003

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  • 低温成膜を目指したアルコキシド系Zr及びTi原料を用いた溶液気化MOCVD法によるPb(Zr,Ti)O3薄膜の合成

    浅野剛司, 十七里和昭, 高松勇吉, 舟窪浩

    第64回応用物理学会学術講演会   2a-V-4   504   2003

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  • アミン系原料を用いたパルス供給MOCVD法によるHfO2薄膜の作製と特性評価

    日野史郎, 中山誠, 高橋健治, 舟窪浩, 徳光永輔

    第50回応用物理学会   28a-ZX-3   875   2003

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  • 接触共振モードAFMによる歪み-電圧特性測定

    沖野裕丈, 歳谷賢司, 和佐清孝, 横山信太郎, 舟窪浩 山本孝

    第50回応用物理学会   30p-R-6   611   2003

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  • MOCVD法により合成したエピタキシャルPZT厚膜電界誘起歪みの結晶方位依存性

    横山信太郎, 本田佳久, 飯島高志, 松田弘文, 斎藤啓介, 舟窪浩

    応用物理学会2003年春講演会   29R-18   575   2003

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  • エピタキシャルPb(ZrxTi1-x)O3膜の薄膜化によるドメイン構造と特性変化

    森岡仁, 横山信太郎, 及川貴弘, 斎藤啓介, 舟窪浩

    応用物理学会2003年春講演会   29p-R-11   603   2003

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  • c軸配向BLSF薄膜キャパシタにおけるthickness-dependence-freeの起源の探索

    小嶌隆志, 坂下幸雄, 加藤一実, 舟窪浩

    応用物理学会2003年春講演会   29a-R-1   596   2003

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  • 高品質エピタキシャルPLZT厚膜の特性に及ぼすLa含有量効果

    本田佳久, 横山信太郎, 舟窪浩

    応用物理学会2003年春講演会   28a-R-3   591   2003

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  • 化学溶液法による(Ca,Sr)Bi4Ti4O15薄膜の作成と電気特性

    内田寛, 桜井恵子, 岡田繁, 松田弘文, 飯島高志, 小島隆志, 渡辺隆之, 舟窪浩

    応用物理学会2003年春講演会   28a-R-2   587   2003

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  • MOCVD法によるRu薄膜の成膜とそのメカニズム

    小菅博明, 渋多見哲夫, 大島憲昭, 有井忠, 澤田豊, 渕上高正, 小島隆志, 横山信太郎, 舟窪浩

    応用物理学会2003年春講演会   27p-R-2   581   2003

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  • 溶液気化供給MOCVD-Pb(Zr,Ti)O3 系原料のFTIR によるin-situ モニタリング

    十七里和昭, 山口隆弘, 難波徹, 佐竹司, 高松勇吉, 日高健一, 井上喜央, 大槻久仁夫, 町田英明, 浅野剛司, 舟窪浩

    応用物理学会2003年春講演会   29p-R-7   602   2003

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  • 溶液気化MOCVD-Pb(Zr,Ti)O3成膜時の溶媒効果のFTIRによる検討

    浅野剛司, 尾関朝彦, 佐竹司, 大槻久仁夫, 十七里和昭, 高松勇吉, 難波徹, 山口隆弘, 町田英明, 舟窪浩

    応用物理学会2003年春講演会   29p-R-6   601   2003

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  • Bi堆積層を用いたゾルゲル(Bi,La)4Ti3O12薄膜の結晶性制御

    井関邦江, 藤崎芳久, 渡辺隆之, 舟窪浩, 石原宏

    第50回応用物理学会   29a-R-7   598   2003

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  • アミン系原料を用いたHfO2のMOCVD成膜と評価

    日野史郎, 中山誠, 徳光英輔, 高橋健治, 舟窪浩

    第20回強誘電体応用会議   28-T-2   15   2003

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  • HfO2のMOCVD成膜におけるH2O酸化剤の効果

    徳光永輔, 中山誠, 日野史郎, 高橋健治, 舟窪浩

    電子情報通信学会シリコン材料・デバイス研究会   2003

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  • 高い機械的品質係数Qmを持つBi3-xMxTiTaO9(M=La,Nd)セラミックス

    鈴木宗泰, 大原仁, 永田肇, 舟窪浩, 竹中正

    第20回強誘電体応用会議   30-P-15   109 - 110   2003

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  • 化学溶液法により作製した(Ca,Sr)Bi4Ti4O15薄膜の電気的特性

    内田寛, 桜井恵子, 岡田勲, 松田弘文, 飯島高志, 小島隆志, 渡邊隆之, 舟窪浩

    第20回強誘電体応用会議   29-T-27   87 - 88   2003

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  • MOCVD法によりSi基板上に作成したPb(Zr,Ti)O3厚膜の電気特性の組成依存性

    横山信太郎, 本田佳久, 森岡仁, 浅野剛司, 飯島高志, 松田弘文, 舟窪浩

    第20回強誘電体応用会議   29-T-13   47 - 48   2003

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  • Si(111)基板上へMOCVD合成したβ-FeSi2膜のPL発光に及ぼす歪みの影響

    秋山賢輔, 木村武, 大屋誠志郎, 前田佳均, 舟窪浩

    第50回応用物理学会   29p-ZD-5   1448   2003

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  • RDE法による(100)配向β-FeSi2初期層を用いてMOCVD合成したβ-FeSi2膜のPL発光

    秋山賢輔, 木村武, 大屋誠志郎, 小沼誠司, 末益崇, 長谷川文夫, 舟窪浩

    第50回応用物理学会   29p-ZD-5   1448   2003

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  • 種々基板上の(100)及び(111)配向エピタキシャルb-FeSi2薄膜の格子整合の解明とその評価

    木村武, 秋山賢輔, 渡辺隆之, 高橋健治, 大屋誠志郎, 大橋直樹, 舟窪浩

    第50回応用物理学会   29p-ZD-4   1447   2003

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  • Hf[N(C2H5)2]4よりMOCVD合成したHf-O薄膜に及ぼす析出温度の効果

    高橋健治, 中山誠, 日野史郎, 徳光永輔, 舟窪浩

    第50回応用物理学会   28a-ZX-4   875   2003

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  • Low Temperature Deposition of Ruthenium Films Using Novel MOCVD Precursors

    Noriaki Oshima Tetsuo, Shibutami kazuhisa Kawano, Shintaro yokoyama Hiiroshi Funakubo

    The Electrochemical Society 203rd Meeting   PS-61   2146   2003

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  • Investigation of Gas-phase Reaction Effect on Deposition Behavior in MOCVD-Pb(Zr,Ti)O3 Film Using in-situ Monitored by Fourier Transform Infrared Spectroscopy

    Gouji Asano, Tsukasa, Satake Kunihiro, Ohtsuki, Hiroshi Funakubo

    The Electrochemical Society 203rd Meeting   PS-61   2169   2003

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  • PZTの物性はどこまでわかっているのか―エピタキシャルPZT薄膜の研究からわかること―

    舟窪浩, 森岡仁, 及川貴弘, 斎藤啓介

    第37回日本セラミックス協会基礎科学部会セミナー   5 - 10   2003

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  • Growth and characterization of perfectly c-axis oriented tetragonal PZT films

    Funakubo Hiroshi, Morioka Hitoshi, Asano Gouji, Oikawa Takahiro, Saito Keisuke

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2M06   586 - 586   2003

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    100% polar-axis (c-axis)-oriented epitaxial Pb(Zr0.35Ti0.65)O3(PZT) thin films were successfully grown and their large remanent polarization (Pr) was directly measured. Perfectly c-axis-oriented epitaxial PZT thin films were obtained on (100)cSrRuO3//(100)SrTiO3 substrates when the deposition temperature increased to 540°C together with a decrease in the film thickness down to 50 nm. Polarization-electric field hysteresis loops were well-saturated and had a square-shape. The Pr of a 50 nm-thick film saturated at 0.9 V, and its value was over 90 μC/cm2 and almost independent of the measurement frequency within the range from 20 Hz to 1 kHz. This value was in good agreement with the estimated one from the a- and c-axes mixture-oriented epitaxial PZT film having the same composition taking into account the fact that only the c-axis-oriented domain contributed to the polarization. On the other hand, the coercive field value of a perfectly c-axis-oriented film was 140 kV/cm and almost the same as that of the mixture-oriented one having the same film thickness. These results show that Pb (Zr0.35Ti0.65)O3 has a large Pr applicable for high-density ferroelectric random access memory.

    DOI: 10.14853/pcersj.2003s.0.586.0

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  • エピタキシャル薄膜を用いたBi4Ti3O12基薄膜の評価

    舟窪浩

    第4回FeRAM総合調査委員会   2003

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  • Piezoelectric properties of lanthanum modified Bi3TiTaO9 ceramics

    M Suzuki, H Nagata, H Funakubo, T Takenaka

    ELECTROCERAMICS IN JAPAN VI   248   11 - 14   2003

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  • Preparation of Hafnium Oxide Films from Oxygen-Free Hf[N(C2H5)2]4 Precursor and Their Properties

    Kenji Takahashi, Makoto Nakayama Shintaro Yokoyama, Takeshi Kimura Eisuke Tokumitsu, Hiroshi Funakubo

    Appl. Surf. Sci.   216   296 - 301   2003

  • Substrate Effect on The Crystal Structure and Ferroelectricity of Low-temperature-deposited Pb(Zr,Ti)O3 Thin Films by Metalorganic Chemical Vapor Deposition

    Kouji Tokita, Masanori Aratani, Hiroshi Funakubo

    Appl. Phys Lett.   82 ( 23 )   4122 - 4124   2003

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  • Investigation of Gas-Phase Reaction Effective on Deposition Behavior in MOCVD-Pb(Zr,Ti)O3 Film Using In-Situ-Monitored by Fourier Transform Infrared Spectroscopy

    Gouji Asano, Tsukasa Satake Kunio, Ohtsuki, Hiroshi Funakubo

    Electrochem. Soc. Proc.   8   471 - 478   2003

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  • Large Piezoelectric Response in (111)-oriented Epitaxial Pb(Zr, Ti)O3 Films Consisting of Mixed Phases with Rhombohedral and Tetragonal Symmetry

    Shintaro Yokoyama, Yoshihisa Honda, Hitoshi Morioka, Takahiro Oikawa, Hiroshi Funakubo, Takashi Iijima Hirohumi, Matsuda Keisuke Saito

    Appl. Phys. Lett.   83 ( 12 )   2408 - 2410   2003

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  • Low temperature deposition of Bi4Ti3O12-based ferroelectric thin films using site engineering concept

    H Funakubo, T Sakai, T Watanabe, T Kojima, Y Noguchi, M Osada

    MORPHOTROPIC PHASE BOUNDARY PEROVSKITES, HIGH STRAIN PIEZOELECTRICS, AND DIELECTRIC CERAMICS   136   407 - 415   2003

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  • X-ray Photoelectron and UV Photoyield Spectroscopic Studies on SrxBiyTa2O9 Films

    M. Takahashi, K. Kodama, M. Noda, M. Okuyama, Takayuki Watanabe, Hiroshi Funakubo

    Journal of Korean Physical Society,   42   S1399-S1403   2003

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  • Effect of starting materials on deposition behavior, crystal structure and electrical properties of MOCVD-PZT films

    H Funakubo, T Ozeki

    ELECTROCERAMICS IN JAPAN VI   248   57 - 60   2003

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  • a,b軸配向エピタキシャル成長BLSF薄膜を用いた2次元ナノ構造の構築

    渡辺隆之, 舟窪浩

    応用物理学会2003年春講演会   27p-Q-9   575   2003

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  • PZT薄膜用MOCVD原料のFTIRインラインモニタリング

    佐竹司, 大槻久仁夫, 浅野剛司, 舟窪浩

    化学工学第68回年会   J308   2003

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  • FTIRによるMOCVD-Pb(Zr,Ti)O3 系気相反応が析出に及ぼす効果

    浅野剛司, 佐竹司, 大槻久仁夫, 舟窪浩

    化学工学第68回年会   J309   2003

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  • Domain Structure of Epitaxial Pb(Zrx,Ti1-x)O3 Thin Films With MPB Composition

    Keisuke Saito, Toshiyuki Kurosawa, Takao Akai, Shintaro Yokoyama, Takahiro Oikawa, Hitoshi Morioka, Hiroshi Funakubo

    Int.Symp. Integ. Ferro   9.1.3-C   434 - 435   2003

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  • 絶縁体基板上へのエピタキシャルβ-FeSi2薄膜の合成とその基礎特性

    木村武, 秋山賢輔, 大橋直樹, 舟窪浩

    第41回セラミックス基礎科学討論会   1E-11   232   2003

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  • Characterization of HfO_2 Thin Films Grown on Silicon Substrates by Source Gas Pulse-Introduced MOCVD for Gate-Insulator Applications

    Nakayama Makoto, Takahashi Kenji, Hino Shiro, Funakubo Hiroshi, Tokumitsu Eisuke

    Proceedings of the IEICE General Conference   2003 ( 2 )   66 - 66   2003

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  • Bi層状強誘電体薄膜の最近の進展

    舟窪浩, 渡辺隆之, 森岡仁, 浅野剛司

    2003年秋季第64回応用物理学会学術講演会   31p-V-7   33   2003

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  • Epitaxial growth of Nd-substituted Bi4Ti3O12 film with in-plane c-axis orientation

    Watanabe Takayuki, Funakubo Hiroshi, Osada Minoru, Noguchi Yuji, Miyayama Masaru, Jin Liu, Sasaki Atsushi, Yoshimoto Mamoru, Kakihana Masato

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2M08   588 - 588   2003

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    Bi4Ti3O12(BIT) and neodymium- and vanadium co-substituted BIT (BNTV) films were epitaxially grown with in-plane c-axis orientations by MOCVD. In-plane c-axis orientations have advantage for estimating spontaneous polarization (Ps) value along a-axis. The Ps value along a-axis was estimated from the saturation polarization values observed for two kinds of epitaxial films with in-plane c-axis orientations. The estimated value, 58 μC/am2, was larger than those of lanthanum-substituted BIT films, 35-38 μC/cm2.

    DOI: 10.14853/pcersj.2003s.0.588.0

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  • Farrication of Ion-cosubstituted Bismuth Titanate Thin films by Chemical Solution Deposition Method

    Hiroshi Uchida Isao Okada, Hifumi Matsuda Takashi iijima, Takayuki Watanabe, Hiroshi Funakubo

    Int. Symp. Integ. Ferro   10.1.7.-C   486 - 487   2003

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  • Growth of hafnium oxide films by metalorganic chemical vapor deposition using oxygen-free Hf[N(C2H5)(2)](4) precursor and their properties

    K Takahashi, M Nakayama, S Hino, E Tokumitsu, H Funakubo

    INTEGRATED FERROELECTRICS   57   1185 - 1192   2003

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  • Ferreoelectric and PiezoelectricPiezoelectric Properties of (100)-/(001)-Oriented Pb(Zr,Ti)O3 Thick Films Prepared by Metal Organic Chemical Vapor Deposition

    Shintaro Yokoyama, Yoshihisa Honda, Takashi Iijima Hirofumi, Matsuda, Hiroshi Funakubo

    Int. Symp. Integ. Ferro   8.1.7-C   384 - 385   2003

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  • Influence of higher-valent cation substitution on ferroelectric properties of BIT-based thin films

    Uchida Hiroshi, Okada Isao, Matsuda Hirofumi, Iijima Takashi, Watanabe Takayuki, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   2003S   595 - 595   2003

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    Ti-site ions in bismuth titanate (BIT) -based thin films were substituted by higher-valent ions than Ti4+ (i.e., V5+, Nb5+, Ta5+, W6+) in order to compensate the charge valence of oxygen vacancies in BIT crystal. Those films were fabricated using a chemical solution deposition (CSD) technique. Ion substitution using higher-valent ions did not only enhance the remanent polarization (Pr) of BIT-based thin films [e.g., La3+ - and Nd3+ -substituted BIT (BLT and BNT), etc.] but also lower the leakage current densities, while ion substituting using one of the same valent (Zr4+) did not improve the ferroelectric properties of BIT-based thin films. Pr values of V5+- and W6+-substituted BLT films (13 and 12 μC/cm2, respectively) were larger than that of BLT film (8 μC/cm2), while Pr value of Zr4+-substituted BLT film (9 μC/cm2) was similar to that of BLT film. V5+-substitution lowered the leakage current density of BLT film from approximately 10-7 down to 10-5 A/cm2.

    DOI: 10.14853/pcersj.2003s.0.595.0

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  • サイトエンジニアリングコンセプトを用いたBi_4Ti_3O_<12>基薄膜特性の設計

    舟窪浩

    電子情報通信学会技術研究報告   SDM02 - 3   2003

  • Ferroelectricity of one-axis-preferred-oriented polycrystalline Pb(Zr,Ti)O-3 films prepared by pulsed-metalorganic chemical vapor deposition

    H Funakubo, M Aratani, T Oikawa, K Tokita, K Saito

    JOURNAL OF APPLIED PHYSICS   92 ( 11 )   6768 - 6772   2002.12

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  • X線回折逆格子空間マッピング法を用いた強誘電体薄膜中のドメイン構造の観察 (特集 強誘電体におけるドメインエンジニアリングの最新動向)

    斎藤 啓介, 舟窪 浩

    機能材料   22 ( 12 )   28 - 33   2002.12

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  • Ferroelectric property of a-/b-axis-oriented epitaxial Sr0.8Bi2.2Ta2O9 thin films grown by metalorganic chemical vapor deposition

    T Watanabe, T Sakai, H Funakubo, K Saito, M Osada, M Yoshimoto, A Sasaki, J Liu, M Kakihana

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   41 ( 12B )   L1478 - L1481   2002.12

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  • Preparation of orientation-controlled polycrystalline Pb(Zr, Ti)O-3 thick films on (100)Si substrates by metalorganic chemical vapor deposition and their electrical properties

    S Yokoyama, T Ozeki, T Oikawa, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   41 ( 11B )   6705 - 6708   2002.11

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  • Comparison of crystal structure and electrical properties of tetragonal and rhombohedral Pb(Zr,Ti)O-3 films prepared at low temperature by pulsed-metalorganic chemical vapor deposition

    H Funakubo, K Tokita, T Oikawa, M Aratani, K Saito

    JOURNAL OF APPLIED PHYSICS   92 ( 9 )   5448 - 5452   2002.11

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  • 強誘電体薄膜材料における非鉛化実現の可能性

    舟窪 浩, 渡辺 隆之, 小島 隆志

    表面   40 ( 11 )   50 - 58   2002.11

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  • Thermal stability of SrRuO3 bottom electrode and electric property of Pb(Zr,Ti)O-3 thin film deposited on SrRuO3

    K Takahashi, T Oikawa, K Saito, H Fujisawa, M Shimizu, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   41 ( 11B )   6873 - 6876   2002.11

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  • Direct crystallization and characterization of Bi3TiTaO9 thin films prepared by metalorganic chemical vapor deposition

    M Suzuki, H Nagata, N Nukaga, T Watanabe, H Funakubo, T Takenaka

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   41 ( 11B )   6825 - 6828   2002.11

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  • Fabrication of M3+-substituted and M3+/V5+-cosubstituted bismuth titanate thin films [M = lanthanoid] by chemical solution deposition technique

    H Uchida, H Yoshikawa, Okada, I, H Matsuda, Takashi, I, T Watanabe, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   41 ( 11B )   6820 - 6824   2002.11

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  • Role of non-180 degrees domain switching in electrical properties of Pb(Zr-0.35, Ti-0.65)O-3 thin films

    K Saito, T Oikawa, T Kurosawa, T Akai, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   41 ( 11B )   6730 - 6734   2002.11

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  • Approach for enhanced polarization of polycrystalline bismuth titanate films by Nd3+/V5+ cosubstitution

    H Uchida, H Yoshikawa, Okada, I, H Matsuda, T Iijima, T Watanabe, T Kojima, H Funakubo

    APPLIED PHYSICS LETTERS   81 ( 12 )   2229 - 2231   2002.9

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  • New preparation process of Pb(ZrxTi1-x)O-3 thin films from PbZrO3 and PbTiO3 multilayers

    G He, T Iijima, H Funakubo

    JOURNAL OF MATERIALS RESEARCH   17 ( 9 )   2217 - 2226   2002.9

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  • Large remanent polarization of Bi4Ti3O12-based thin films modified by the site engineering technique

    T Watanabe, T Kojima, T Sakai, H Funakubo, M Osada, Y Noguchi, M Miyayama

    JOURNAL OF APPLIED PHYSICS   92 ( 3 )   1518 - 1521   2002.8

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  • Room-temperature epitaxial growth of indium tin oxide thin films on Si substrates with an epitaxial CeO2 ultrathin buffer

    J Tashiro, A Sasaki, S Akiba, S Satoh, T Watanabe, H Funakubo, M Yoshimoto

    THIN SOLID FILMS   415 ( 1-2 )   272 - 275   2002.8

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  • Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films with long-range lattice matching

    T Watanabe, H Funakubo, K Saito, T Suzuki, M Fujimoto, M Osada, Y Noguchi, M Miyayama

    APPLIED PHYSICS LETTERS   81 ( 9 )   1660 - 1662   2002.8

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  • Effect of strain in epitaxially grown SrRuO3 thin films on crystal structure and electric properties

    K Takahashi, T Oikawa, K Saito, S Kaneko, H Fujisawa, M Shimizu, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   41 ( 8 )   5376 - 5380   2002.8

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  • Effect of atmosphere during heating of substrate on the low temperature deposition of metalorganic chemical vapor deposited Pb(Zr-x,Ti1-x)O-3 thin films

    K Tokita, M Aratani, H Funakubo

    APPLIED PHYSICS LETTERS   81 ( 5 )   898 - 900   2002.7

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  • Preparation of HfO_2 thin films by chemical vapor deposition for gate-insulator applications

    NAKAYAMA Makoto, TAKAHASHI Kenji, FUNAKUBO Hiroshi, TOKUMITSU Eisuke

    Technical report of IEICE. SDM   102 ( 178 )   149 - 153   2002.6

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    HfO_2 thin films were deposited on p-type Si (100) substrates by the chemical vapor deposition technique using Hf(O-1C_4H_9)_4 as a source material. Capacitance-voltage (C-V) characteristics of AI/HfO_2/SiO_2/Si/Ag structures had little hysteresis and an SiO_2 equivalent oxide thickness (EOT) of 1.8nm was obtained for the sample with a physical HfO_2 thickness of 2.5 nm. HRTEM image shows the presence of 1.4 nm interfacial layer. The relative dielectric constant ε_r of the HfO_2 layer and the thickness of the interfacial layer, estimated from the EOT plot as a function of HfO_2 physical thickness, are 19.7 and 1.4nm, respectively.

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  • Preparation of SrBi2Ta2O9 thin films consisting of uniform grains at low temperature by metalorganic chemical vapor deposition

    N Nukaga, M Saito, K Okuwada, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   41 ( 6B )   L710 - L712   2002.6

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  • Preparation of SrBi2(Ta0.7Nb0.3)(2)O-9-Bi3TaTiO9 solid solution films by MOCVD and their properties

    M Mitsuya, M Osada, K Saito, H Funakubo

    JOURNAL OF CRYSTAL GROWTH   237   473 - 477   2002.4

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  • New control method of low deposition temperature limit of metal-organic chemical vapor deposition (MOCVD) by the introduction of organ vapor - Application to SrRuO3 film preparation

    N Higashi, Y Murakami, H Machida, S Seki, Y Sawada, H Funakubo

    THIN SOLID FILMS   409 ( 1 )   33 - 36   2002.4

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  • New control method for low temperature deposition limit of metalorganic chemical vapor deposition (MOCVD) by the introduction of organic vapor-application to ZrO2 film preparation

    N Higashi, Y Murakami, H Machida, S Seki, Y Sawada, H Funakubo

    THIN SOLID FILMS   409 ( 1 )   23 - 27   2002.4

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  • Large remanent polarization of (Bi,Nd)(4)Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition

    T Kojima, T Sakai, T Watanabe, H Funakubo, K Saito, M Osada

    APPLIED PHYSICS LETTERS   80 ( 15 )   2746 - 2748   2002.4

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  • Composition dependence of constituent phase of Fe-Si thin film prepared by MOCVD

    K Akiyama, S Ohya, S Konuma, K Numata, H Funakubo

    JOURNAL OF CRYSTAL GROWTH   237   1951 - 1955   2002.4

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  • Domain structures in epitaxial Pb(Zr-0.68,Ti-0.32)O-3 thin films

    K Saito, T Oikawa, Yamaji, I, T Akai, H Funakubo

    JOURNAL OF CRYSTAL GROWTH   237   464 - 467   2002.4

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  • Highly-conducting indium-tin-oxide transparent films fabricated by spray CVD using ethanol solution of indium (III) chloride and tin (II) chloride

    Y Sawada, C Kobayashi, S Seki, H Funakubo

    THIN SOLID FILMS   409 ( 1 )   46 - 50   2002.4

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  • Fabrication of lead zirconate titanate thin films using a diffusion process of lead zirconate and lead titanate multilayer films

    T Iijima, G He, H Funakubo

    JOURNAL OF CRYSTAL GROWTH   236 ( 1-3 )   248 - 252   2002.3

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  • 新材料開発 サイトエンジニアリングコンセプトに基づくBi4Ti3O12基強誘電体の設計

    舟窪 浩, 渡辺 隆之

    工業材料 = Engineering materials   50 ( 3 )   101 - 105   2002.3

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    Language:Japanese   Publisher:東京 : 日刊工業新聞社  

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  • Metal organic chemical vapor deposition growth of epitaxial SrRuO3 and CaRuO3 thin films with different orientations as the bottom electrode for epitaxial ferroelectric thin film

    H Funakubo, T Oikawa, N Higashi, K Saito

    JOURNAL OF CRYSTAL GROWTH   235 ( 1-4 )   401 - 406   2002.2

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    Language:English  

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  • Orientation of Bi4Ti3O12-based ferroelectric thin films prepared on various kinds of substrates by metalorganic chemical vapor deposition

    T Watanabe, K Saito, H Funakubo

    JOURNAL OF CRYSTAL GROWTH   235 ( 1-4 )   389 - 393   2002.2

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  • Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi<inf>4</inf>Ti<inf>3</inf>O<inf>12</inf>-based thin films on rutile-type oxides

    Takayuki Watanabe, Keisuke Saito, Minoru Osada, Hiroshi Funakubo

    Materials Research Society Symposium - Proceedings   688   155 - 160   2002.1

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  • Effect of cosubstitution of La and V in Bi4Ti3O12 thin films on the low-temperature deposition

    T Watanabe, H Funakubo, M Osada, Y Noguchi, M Miyayama

    APPLIED PHYSICS LETTERS   80 ( 1 )   100 - 102   2002.1

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  • Role of non-180o Domain Switching in Electrical Porperties of Pb(Zr,Ti)O_3_ Thin Films

    K.Saito, T.Oikawa, T.Kurosawa, T.Akai, H.Funakubo

    IFFF2002   30H-TB-13P   261   2002

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  • Low-leakage epitaxial PZT thin films grown on Ir/MgO substrates by metalorganic chemical vapor deposition

    T Oikawa, K Takahashi, J Ishida, Y Ichikawa, T Ochiai, K Saito, A Sawabe, H Funakubo

    INTEGRATED FERROELECTRICS   46   55 - 64   2002

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  • Preparation of SrBi_2_Ta_2_O_9_ thin films by liquid-delivery MOCVD without addition of solvents

    Norimasa Nukaga, Hirofumi Ono Yataya, Shida Hideaki Machida Toshie Suzuki, Hiroshi Funakubo

    IFFF2002   30H-TS-1P   252   2002

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  • Ln (Ln=La, Pr, Nd, Sm) Dependence On Ferroelectric Property of (Bi_3.25_Ln_0.75_)(Ti_2.97_V_0.03_)O_12_ Thin Films Prepared at low Deposition Temperature

    T. Sakai, T.Watanabe, T.Kojima, M.Osada, Y.Noguchi, M.Miyayama, Hiroshi Funakubo

    IFFF2002   29A-TF3-2C   42   2002

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  • Wide process window of low-temperature-deposited Pb(Zr,Ti)O_3_ films by pulsed-MOCVD

    G. Asano, T.Oikawa, K.Okada, H.Funakubo

    IFFF2002   29H-TP-23P   138   2002

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  • Doping effects in Layer structured Bi_4_Ti_3_O_12_ Ferroelectrics: Lattice Dynamics and Property Desighn Investigation by Ramana Spectroscopy

    Minoru Osada, Masato Kakihana, Yuji Noguchi, Masaru Miyayama, Takayuki Watanabe, Hiroshi Funakubo

    IFFF2002   31C-CH-3C   291   2002

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  • Crystallization and Characterization of Bi_3_TiTaO_9_ and Bi_3_-xLaxTiTaO_9_ Thin Films Prepared by MOCVD

    M.Suzuki, M.Masatoshi, N.Nukagawa, T, watanabe, N.Hajime, T.Takenaka, H.Funakubo

    IFFF2002   30H-TB-15P   262   2002

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  • Composition and Orientation Dependences of Dielectric and Ferroelectric Properties of Epitaxial PZT Thin Films Grown by Metalorganic Chemical Vapor Deposition

    T. Oikawa, K.Saito, H.Funakubo

    IFFF2002   29H-TP1-25P   139   2002

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  • Large Remanent Polarization of (Bi,Nd)_4_Ti_3_O_12_ Epitaxial Thin Films Grown by Metalorganic Chemical Vapor Deposition

    T. Kojima, T.Sakai, T.Watanabe, H.Funakubo

    IFFF2002   31G-EL-6P   360   2002

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  • Orientation control of Pb(Zr,Ti)O_3_(PZT) thick film prepared by high-speed deposition and their property

    S. Yokoyama, T.Ozeki, T.Oikawa, Y.Ichikawa, Y.Yamashitra, T.Ochiai, H.Funakubo

    IFFF2002   29B-P12-6C   52   2002

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  • Thermal Stability of SrRuO_3_-Bottom-Electrode and the Crystal Structure and the Electrical Property of PZT Thin Films Deposited on SrRuO_3_

    Kenji Takahashi, Takahiro Oikawa, Keisuke Saito Hironori Fujisawa, Masaru Shimizu, Hiroshi Funakubo

    IFFF2002   31G-EL-6P   360   2002

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  • Preparation and characterization of site-engineered Bi_4_Ti_3_O_12_-based thin films by MOCVD

    T. Watanabe, T.Kojima, T.Sakai, H.Funakubo, M.Osada K.Saito

    IFFF2002   30H-TB-13P   261   2002

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  • Composition dependence of ferroelectric properties of epitaxial Pb(ZrxTi1-x)O3 thin films grown by metalorganic chemical vapor deposition

    Takahiro Oikawa, Masanori Aratani, Keisuke Saito, Hiroshi Funakubo

    Journal of Crystal Growth   237-239 ( 1 )   455 - 458   2002

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  • MOCVD法によるRu薄膜の低温成長

    渋田見哲夫, 小菅博明, 大島憲昭, 小島隆志, 横山新太郎, 舟窪浩

    応用物理学会2002年秋講演会   25p-P6-6   454   2002

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  • 原子間力顕微鏡を用いた歪みー電圧特性測定の精密化

    沖野祐文, 歳谷賢司, 和佐清孝, 横山信太郎, 舟窪浩 山本孝

    応用物理学会2002年秋講演会   24p-P4-28   452   2002

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  • 顕微ラマン分光法法による強誘電体材料の微視的評価

    長田実, 垣花眞人, 野口祐二, 宮山勝, 渡辺隆之, 舟窪浩

    応用物理学会2002年秋講演会   24p-P4-27   451   2002

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  • Ferroelectricity of (Bi, Ln)_4_Ti_3_O_12_ (Ln: Lantanoide) Epitaxiual Thin Films Grown by Metalorganic Chemical Vapor Depositionn.

    T.Kojima, T.Sakai, T.Watanabe, H.Funakubo, K.Saito, M.Osada

    The 4th Japan-Korea Conference on ferroelectrics   P2-33   112   2002

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  • Wide Process Window of Low-Temparature-Deposited Pb(Z,Ti)O_3_ Films by Pulsed-MOCVD

    G.Asanao, T.Oikawa, K.Okada, H.Funakubo

    The 4th Japan-Korea Conference on ferroelectrics   P2-29   108   2002

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  • Effect of V-sbstitution on the Ferroelectric Proerties of Bi_4_Ti_3_O_12_ and (Bi,M)_4_Ti_3_O_12_ [M=Lantanoid] Films Fabricated by Chemical Solution Deposition Technique

    H.Uchida, H.Yoshikawa, I.Okada, H.Matsuda, T.Iijima T, watanabe, H.Funakubo

    IFFF2002   30H-TB-9P   .259   2002

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  • Bi_3_TiTaO_9_の強誘電性に及ぼすランタノイド置換効果

    鈴木宗泰, 永田肇, 舟窪浩, 竹中正

    応用物理学会2002年秋講演会   26p-V-5   156   2002

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  • The growth mechanism and characterization of high-quality β-FeSi2 thin film

    Kimura Takeshi, Akiyama Kensuke, Funakubo Hiroshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br> Preprints of Fall Meeting of The Ceramic Society of Japan   3J17   252 - 473   2002

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    Publisher:The Ceramic Society of Japan  

    Epitaxial (101)/(110)-oriented β-FeSi2 thin films were grown by MOCVD on (111)Si substrates with and without β-FeSi2 buffer layer prepared by RF magnetron sputtering method. By inserting buffer layer, highly-oriented films were obtained.

    DOI: 10.14853/pcersj.2002f.0.473.0

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  • Preparation and characterization of a-/b-axis-oriented epitaxually grown bismuth layer-structured ferroelectrics

    TakayukiWatanabe Tomohiro, Sakai, Hiroshi Funakubo

    8th international Conference on Electric Ceramics and Their Apploications   TF-033-P   242   2002

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  • X-ray Photoelectron and Photoyield Spectroscopic Studies on Barrier Height of SBT Films

    M.Takahashi, K.Kodama, T.Watanabe, H.Funakubo, M.Noda, M.Okuyama

    The 4th Japan-Korea Conference on ferroelectrics   P2-52   131   2002

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  • パルス供給MOCVD法によるHfO_2_薄膜の作製と特性評価

    中山誠, 高橋健治, 日野史郎, 舟窪浩, 徳光永輔

    応用物理学会2002年秋講演会   25a-C-1   720   2002

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  • 面内c軸配向したエピタキシャルBi_4_Ti_3O_12_基薄膜の合成と特性評価

    渡辺孝之, 伊佐寛, 佐々木敦, 吉本護, 長田実, 垣花眞人, 野口祐二, 宮山勝, 斉藤啓介, 舟窪浩

    応用物理学会2002年秋講演会   27a-P14-17   478   2002

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  • 化学溶液法による高価数イオン置換BIT基薄膜の作製

    内田寛, 岡田勲, 松田弘文, 飯島高志, 渡辺孝之, 舟窪浩

    応用物理学会2002年秋講演会   27a-P14-13   476   2002

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  • 相境界近傍Pb(Zr,Ti)O_3_薄膜における正方晶、菱面体晶混在比の膜厚依存性

    斉藤啓介, 横山信太郎, 及川貴弘, 黒沢利行, 赤井孝夫, 舟窪浩

    応用物理学会2002年秋講演会   26a-P10-11   466   2002

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  • MOCVD法のより合成した(100)(001)配向PZT厚膜の圧電特性

    横山信太郎, 本田佳久, 飯島高志, 松田弘文, 舟窪浩

    応用物理学会2002年秋講演会   26a-P10-3   463   2002

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  • MOCVD法のみによるRuO_2_/Pb(Zr,Ti)O_3_/RuO_2_キャパシタの作成と評価

    浅野剛司, 森岡仁, 横山信太郎, 渋田見哲夫, 大島憲昭, 舟窪浩

    応用物理学会2002年秋講演会   26a-P10-2   463   2002

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  • 高容量薄膜コンデンサー用Bi層状構造強誘電体の探索

    小島隆志, 坂下幸雄, 渡辺隆之, 加藤一美, 舟窪浩

    応用物理学会2002年秋講演会   25a-P6-10   456   2002

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  • XPSと紫外線光電子分光を用いたMOCVD-SBT薄膜のバリアハイトの考察

    高橋光恵, 渡辺隆之, 舟窪浩, 野田実, 奥山雅則

    応用物理学会2002年秋講演会   27a-P14-5   474   2002

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  • MOCVD法によるPLZT厚膜作製と特性評価

    本田佳久, 横山信太郎, 舟窪浩

    応用物理学会2002年秋講演会   26a-P10-27   471   2002

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  • 正方晶組成Pb(Zr,Ti)O_3_薄膜の電気特性に及ぼすaドメインの効果

    森岡仁, 浅野剛司, 及川貴弘, 舟窪浩

    応用物理学会2002年秋講演会   26a-P10-22   469   2002

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  • 液体供給MOCVD-Pb(Zr,Ti)O_3_系原料のFT-IRによるin-situ

    十七里和昭, 高松勇吉, 佐竹司, 大槻久仁夫, 浅野剛司, 舟窪浩

    応用物理学会2002年秋講演会   26a-P10-14   467   2002

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  • PZT薄膜用MOCVD原料のFTIRインラインモニタリングの検討

    佐竹司, 大槻久仁夫, 浅野剛司, 岡田清, 舟窪浩

    応用物理学会2002年春講演会   28a-ZA-4   520   2002

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  • 高純度FeRAMを目指したSrBi_2_Ta_2_O_9_―下部電極間清浄界面の実現

    額賀紀全, 舟窪浩

    応用物理学会2002年春講演会   28a-ZA-9   526   2002

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  • Bi層状構造強誘電体薄膜コンデンサへの応用

    小島隆志, 坂下幸雄, 渡辺隆之, 斎藤啓介, 舟窪浩

    応用物理学会2002年春講演会   28a-ZA-10   522   2002

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  • MOCVD-PZT析出に及ぼす溶媒の効果の検討

    尾関朝彦, 横山信太郎, 町田英明, 米山岳夫, 高松勇吉, 舟窪浩

    応用物理学会2002年春講演会   27p-ZA-2   511   2002

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  • MOCVD法によるPZT厚膜の合成と評価

    横山信太郎, 尾関朝彦, 及川貴弘, 舟窪浩

    応用物理学会2002年春講演会   27a-ZA-8   509   2002

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  • MOCVD法によるPZT極薄膜の作成

    及川貴弘, 横山信太郎, 尾関朝彦, 石田純一, 斎藤啓介, 渡邊厚仁, 舟窪浩

    応用物理学会2002年春講演会   27a-ZA-6   508   2002

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  • FTIRによるMOCVD-Pb(Zr,Ti)O_3_系気相反応モニタリング

    浅野剛司, 佐竹司, 大槻久仁夫, 岡田清 舟窪浩

    応用物理学会2002年春講演会   28a-ZA-5   521   2002

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  • a,b軸配向エピタキシャルBi_4_Ti_3_O_12_基薄膜の合成と特性評価

    渡辺隆之, 伊佐寛, 佐々木敦, 吉本護, 長田実, 野口祐二, 宮山勝, 斎藤啓介, 鈴木利昌, 藤本正之, 舟窪浩

    応用物理学会2002年春講演会   28p-ZA-17   528   2002

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  • MOCVD合成したβ-FeSi_2_薄膜の結晶性と電気特性の関係

    木村武, 秋山啓輔, 舟窪浩

    日本セラミックス協会基礎討論会   1A-13   28   2002

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  • 高速成膜したPZT厚膜の配向制御とその特性評価

    横山信太郎, 尾関朝彦, 舟窪浩

    日本セラミックス協会基礎討論会   1A-13   26   2002

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  • Approach for enhanced Polarization of Polycrystalline Bismuth Titanete Films by Nd_3_+/V_5_+ Cosubstitution

    Hiroshi Uchida, Hiroki Yoshikawa Isao Okada, Hifumi Matsuda Takashi Iijima Takayuki Watanabe, Takashi Kojima, Hiroshi Funakubo

    Appl.Phys.Lett.   81 ( 12 )   2229 - 2231   2002

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  • 構造中に酸素を含まないHfを用いたMOCVD法によるHfO_2_薄膜の合成と評価

    高橋健治, 中山誠, 水平学, 徳光永輔, 舟窪浩

    応用物理学会2002年春講演会   28p-A-11   821   2002

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  • a,b軸配向エピタキシャルSBT薄膜の合成と評価

    酒井朋裕, 渡辺隆之, 額賀紀全, 高橋健治, 小島隆志, 斎藤啓介, 舟窪浩

    応用物理学会2002年春講演会   28a-ZA-16   528   2002

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  • XRDを用いたエピタキシャルPb(Zrx, Ti1-x)O_3_薄膜における相境界近傍の結晶構造

    斎藤啓介, 及川貴弘, 黒澤利行, 赤井孝夫, 舟窪浩

    応用物理学会2002年春講演会   28a-ZA-6   521   2002

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  • 化学溶液法によるV置換(Bi,Ln)4Ti_3_O_12_薄膜[Ln=ランタノイド]の作製

    内田寛, 吉川博樹, 岡田勲, 松田弘文, 飯島高志, 渡辺隆之, 舟窪浩

    物理学会2002年春講演会   29p-ZA-3   533   2002

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  • 室温でのTC(ITO or ZnO)/CeO_2_/Si(111)オールエピタキシャル構造の形成と光電特性(II)

    田代純一, 秋葉周作, 佐藤周平, 渡辺隆之, 舟窪浩, 吉本護

    応用物理学会2002年春講演会   30p-YA-5   .633   2002

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  • X線回折によるSi(111)基板上のβ-FeSi_2_(202)と(220)ドメインの定量的評価

    秋山賢輔, 木村武, 大屋誠志郎, 栗原幸男, 渡辺隆之, 舟窪浩

    応用物理学会2002年春講演会   29p-V-12   1362   2002

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  • Si(100)基板上のβ-FeSi_2_バッファー上へMOCVD合成したβ- FeSi_2_薄膜の結晶構造解析

    木村武, 秋山賢輔, 末益崇, 長谷川文夫, 斎藤啓介, 渡辺隆之, 舟窪浩

    応用物理学会2002年春講演会   29p-V-12   1362   2002

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  • Hf(O・t-C_4_H_9_)_4_ を用いたMOCVD法によるHfO_2_薄膜の作製と特性評価

    中山誠, 高橋健治, 舟窪浩, 徳光永輔

    応用物理学会2002年春講演会   28p-A-12   821   2002

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  • 溶液法によるBi_4_-xSr_3_-xTi_3_-xNbxO_12_薄膜の合成と強誘電特性

    松田弘文, 飯島高志, 内田寛, 岡田勲, 渡辺隆之, 舟窪浩

    応用物理学会2002年春講演会   29p-ZA-2   533   2002

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  • MOCVDによるRu薄膜の成膜と評価(2)

    河野和久, 渋田見哲夫, 大島憲昭, 横山信太郎, 舟窪浩

    応用物理学会2002年春講演会   29p-ZA-6   534   2002

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  • MOCVDによるRu薄膜の成膜と評価(1)

    渋田見哲夫, 河野和久, 大島憲昭, 横山信太郎, 舟窪浩

    応用物理学会2002年春講演会   29p-ZA-7   534   2002

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  • Preparation and characterization of c-axis oriented epitaxial Bi2VO5.5 thin films prepared by metalorganic chemical vapor deposition

    K Ishikawa, T Sakai, T Watanabe, H Funakubo

    ASIAN CERAMIC SCIENCE FOR ELECTRONICS I   214-2   189 - 192   2002

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  • a,b軸配向エピタキシャルBi4Ti3O12基薄膜の合成と特性評価

    社団法人 電気通信学会 信学技報   SDM- 2001 ( 254 )   1 - 5   2002

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  • サイトエンジニアリングコンセプトを用いた4BiTi3O12基薄膜特性の設計

    舟窪 浩, 渡辺 隆之, 酒井 朋裕

    社団法人 電気通信学会 信学技報   SDM-2001 ( 254 )   19 - 24   2002

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    Language:Japanese   Publisher:東京 : 電子情報通信学会  

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  • Conduction mechanism of La-, Nb-doped BaTiO3 thin films by doping MOCVD

    D Nagano, M Sugiura, N Wakiya, H Funakubo, K Shinozaki, N Mizutani

    ELECTROCERAMICS IN JAPAN IV   216   87 - 90   2002

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  • Preparation and Characterization of a-and c-axis-oriented Epitaxially Grown Bi_4_Ti_3_O_12_-Based Thin Films on Rutile-type Oxides

    Takayuki Watanabe, Keisuke Saito Minoru, Osada Hiroshi Funakubo Takayuki Watanabe Keisuke Saito Minoru, Osada, Hiroshi Funakubo

    Proc. Mater.Res.Soc   688 ( C6.2 )   1 - 6   2002

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  • Low Temperature Preparation of High-quolity Pb(Zr,Ti)O_3_ Films by Metal Organic Chemical Vapor Deposition With High Quolity

    Hiroshi Funakubo Kuniharu Nagashima Masanori Aratani, Kouji Tokita, Takahiro Oikawa Tomohiko Ozeki, Keisuke Saito

    Proc. Metar.Res.Soc.   688 ( C1.1 )   1 - 11   2002

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  • Preparation of SrBi2Ta2O9 thin films by liquid-delivery MOCVD without additional solvents

    N Nukaga, H Ono, T Shida, H Machida, T Suzuki, H Funakubo

    INTEGRATED FERROELECTRICS   45   215 - 222   2002

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  • Growth of Environmental-Friendly b-FeSi2 Semiconductor Thin Film and Control of Electrical Property Using Si Doant

    K. Akiyama, T. Kimura, H. Funakubo

    MRS-J   G2-O03-D   156   2002

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  • Electrical properties of polycrystalline and epitaxially grown PZT thin films

    K Tokita, M Aratani, T Ozeki, H Funakubo

    ELECTROCERAMICS IN JAPAN IV   216   83 - 86   2002

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  • Metal Organic Chemical Vapor Deposition Growth of Epitaxial (Sr,Ca)RuO_3_ Thin Films with Different Orientations as Bottom Electrode for Epitaxial Ferroelectric Thin Film

    Hiroshi Funakubo, Takahiro Oikawa Noriyuki Higashi, Keisuke Saito

    J.Crystal Growth   235   401 - 406   2002

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  • Compostion Dependence of Ferroelectric Property of Epitaxial Pb(Zr,Ti)O_3_ Thin Films Grown by Metalorganic Chemical Vapor Deposition

    Takahiro Oikawa, Masanori Aratani Kesuke Saito, Hiroshi Funakubo

    J.Crystal Growth   237-240   455 - 458   2002

  • New Control Methods of Low Temperature Deposition Limit of Metal Organic Chemical Vapor Deposition(MOCVD) by The Introduction of Organic Vapor - Application to SrRuO_3_ Film Preparation

    Noriyuki Higashi, Yasushi Murakami, Hideki Machida, Shigeyuki Seki, Yutaka Sawada, Hiroshi Funakubo

    Thin Solid Films   409   33 - 36   2002

  • Ferroelectricity of epitaxial and polycrystalline PZT films prepared by pulsed-MOCVD

    H Funakubo, T Oikawa, K Nagashima, M Aratani, K Saito

    ASIAN CERAMIC SCIENCE FOR ELECTRONICS II AND ELECTROCERAMICS IN JAPAN V, PROCEEDINGS   228-2   69 - 73   2002

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  • Effect of Strain in Epitaxially-Grown SrRuO_3_ Thin Films On the Crystal Structure and the Electrical Properties

    Kenji Tkahashi, Takayuki Oikawa, Kesiuke Saito, Tomoji, Kaneko HirofumiFujisawa Masanori Shimizu, Hiroshi Funakubo

    Jpn.J.Appl.Phys.   41 ( 8 )   5376 - 5380   2002

  • Large remanant polarization of Bi_4_Ti_3_O_12_-based Thin Films Modified by Site Engineering technique

    Takayuki Watanabe, Takashi, Kojima Tomohiro, Sakai Hioshi, Funakubo Minoru, Osada Yuuji Noguchi, Masaru Miyayama

    J.Appl.Phys   92 ( 3 )   1518 - 1521   2002

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  • Effect of Atmospehere During Heating Substrate on Low Temperature Deposition of Metal-organic Chemical Vapor Deposited PZT Thin Films

    Kouji Tokita, Masanori Aratani, Hiroshi Funakubo

    Appl.Phys.Lett.   81 ( 5 )   898 - 900   2002

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  • Large Remanent polarization of (Bi,Nd)Ti_3_O_12_ Epitaxial Thin Films Grown by Metalorganic Chemical Vapor Deposition

    Takashi Kojima Tomohiro, Sakai Takayuki Watanabe, Hiroshi Funakubo, Keisuke Saito, Minoru Osada

    Appl.Phys.Lett.   80 ( 15 )   2746 - 2748   2002

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  • Synthesis and Ferroerectlic Properties of Sr- and Nb-codoped Bi_4_-xSrxTi_3_-xNbxO_12_ Thin Films by Sol-Gel-Methods

    Hifumi Matsuda, Takashi Iijima Hiroshi Uchida Isao, Okada Takayuki Watanab, Hiroshi Funakubo

    Proc. Mater Res.Soc.   688 ( C4.14 )   1 - 5   2002

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  • Fabrication of V-substituted (Bi,M)_4_Ti_3_O_12_[M=Lanthanoides] Thin Films by Chemical Solution Deposition Methods

    H.Uchida, H.Toshikawa, I.Okada, H.Matsuda, T.Iijima T.Watanabe, H.Funakubo

    Proc. Mater Res.Soc.   688 ( C2.3 )   1 - 6   2002

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  • Hetero-epitaxial Growth of (1,0,m+1) one-axis-oriented Bithmuth Layered Structured Ferroelectrics Thin Films Diectly Crystallized by MOCVD

    Norimasa Nukaga, Takayuki Watanabe Tomohiro, Sakai Toshimasa Suuzuki, Yuji Nishi, Masayuki Fujimoto, Hiroshi Funakubo

    Proc. Mater.Res.Soc.   688 ( C2.21 )   1 - 6   2002

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  • New Control Methods of Low Temperature Deposition Limit of Metal Organic Chemical Vapor Deposition(MOCVD) by The Introduction of Organic Vapor-Application to ZrO_2_ Film Preparation

    Noriyuki Higashi, Yasushi Murakami, Hideki Machida, Shigeyuki Seki, Yutaka Sawada, Hiroshi Funakubo

    Thin Solid Films   409   23 - 27   2002

  • “Size effect” of Ferroelectric Thin Films. -Comparison of Simple Perovskite Ferroelectric and Bismuth Layer Structured Ferroelectric.

    Hiroshi Funakubo, Takayuki Watanabe, Takashi Kojima Hitoshi Morioka Gouji, Asano, Takahiro Oikawa, Keisuke Saito

    MRS-J   22   2002

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  • Preparation and characterization of a-/b-axis-oriented epitaxually grown bismuth layer-structured ferroelectrics

    TakayukiWatanabe Tomohiro, Sakai, Hiroshi Funakubo

    8th international Conference on Electric Ceramics and Their Apploications   TF-033-P   242   2002

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  • X-ray Photoelectron and Photoyield Spectroscopic Studies on Barrier Height of SBT Films

    M.Takahashi, K.Kodama, T.Watanabe, H.Funakubo, M.Noda, M.Okuyama

    The 4th Japan-Korea Conference on ferroelectrics   P2-52   131   2002

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  • Doping effects in Layer structured Bi_4_Ti_3_O_12_ Ferroelectrics: Lattice Dynamics and Property Desighn Investigation by Ramana Spectroscopy

    Minoru Osada, Masato Kakihana, Yuji Noguchi, Masaru Miyayama, Takayuki Watanabe, Hiroshi Funakubo

    IFFF2002   31C-CH-3C   291   2002

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  • Crystallization and Characterization of Bi_3_TiTaO_9_ and Bi_3_-xLaxTiTaO_9_ Thin Films Prepared by MOCVD

    M.Suzuki, M.Masatoshi, N.Nukagawa, T, watanabe, N.Hajime, T.Takenaka, H.Funakubo

    IFFF2002   30H-TB-15P   262   2002

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  • Composition and Orientation Dependences of Dielectric and Ferroelectric Properties of Epitaxial PZT Thin Films Grown by Metalorganic Chemical Vapor Deposition

    T. Oikawa, K.Saito, H.Funakubo

    IFFF2002   29H-TP1-25P   139   2002

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  • Large Remanent Polarization of (Bi,Nd)_4_Ti_3_O_12_ Epitaxial Thin Films Grown by Metalorganic Chemical Vapor Deposition

    T. Kojima, T.Sakai, T.Watanabe, H.Funakubo

    IFFF2002   31G-EL-6P   360   2002

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  • Ferroelectricity of (Bi, Ln)_4_Ti_3_O_12_ (Ln: Lantanoide) Epitaxiual Thin Films Grown by Metalorganic Chemical Vapor Depositionn.

    T.Kojima, T.Sakai, T.Watanabe, H.Funakubo, K.Saito, M.Osada

    The 4th Japan-Korea Conference on ferroelectrics   P2-33   112   2002

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  • Wide Process Window of Low-Temparature-Deposited Pb(Z,Ti)O_3_ Films by Pulsed-MOCVD

    G.Asanao, T.Oikawa, K.Okada, H.Funakubo

    The 4th Japan-Korea Conference on ferroelectrics   P2-29   108   2002

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  • Effect of V-sbstitution on the Ferroelectric Proerties of Bi_4_Ti_3_O_12_ and (Bi,M)_4_Ti_3_O_12_ [M=Lantanoid] Films Fabricated by Chemical Solution Deposition Technique

    H.Uchida, H.Yoshikawa, I.Okada, H.Matsuda, T.Iijima T, watanabe, H.Funakubo

    IFFF2002   30H-TB-9P   .259   2002

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  • Role of non-180o Domain Switching in Electrical Porperties of Pb(Zr,Ti)O_3_ Thin Films

    K.Saito, T.Oikawa, T.Kurosawa, T.Akai, H.Funakubo

    IFFF2002   30H-TB-13P   261   2002

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  • Piezoelectric Properties of Orientation-controlled PZT Thick Films prepared by Metalorganic Chemical Vapor Deposition

    S.Yokoyama, Y. Honda, T. Iijima, H, Matsuda, H. Funakubo

    MRS-J   K2-P12-M   215   2002

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  • Characterization of PLZT Thick Film Prepared by MOCVD

    Yoshihisa Honda, S.Yokoyama, H. Funakubo

    MRS-J   K2-P11-M   215   2002

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  • Contribution to a-domain on The Electrical Properties of Tetragonal Pb(Zr,Ti)O3 Thin Films

    Hitoshi Morioka, Gouji Asano, Takahiro Oikawa, Keisuke Saito, Hiroshi Funakubo

    MRS-J   K2-P08-M   214   2002

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  • A Novel Ruthenium Precursors for MOCVD Without Seed Ruthenium Layer

    Tetsuo Shibutami Kazuhisa Kawano, Noriaki Ooshima Shintaro yokoyama, Hiroshi Funakubo

    Proc. Mater. Res. Soc.   U12.7.   462   2002

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  • Dopimg Effects

    Minoru Osada, Masato Kakihana, Yuji Noguchi, Marau Miyayama, Takayuki Watanabe, Hiroshi Funakubo

    Proc. Mater. Res. Soc.   U2.4   445   2002

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  • In-plane Long Lattice Matching of a-/b- axis Oriented Ferroelectric Bisumuth Layer-Structured Ferreoelectric Thin Films

    Takayuki Watanabe, Tomohiko, Sakai, Hiroshi Funakubo, Minor, Osada Masato Kakihana, Yuji Noguchi, Marau Miyayama

    Proc. Mater. Res. Soc.   ( U2.4 )   445   2002

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  • Seed Layer Free Rutehenium Precursor for MO-CVD

    N. Ohshima T, Shibutami, K. Kawao, S. Yokoyama, H. Funakubo

    202nd Meeting of Electrochmical Society   403   2002

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  • Characterization of HfO2 Films Grown on Silicon Substrate by metal-organic Chemical Vapor Deposition

    Eisuke Tokumitsu, Kenji Takahashi, Makoto Nakayam, Hiroshi Funakubo

    Fourth International Symposium on Control of Semiconductor Interface   2 - 10   2002

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  • Tetragonal and Rhombohedral Mixture Phase Composition in Pb(ZrxTi1-x)O3 System

    Keisuke Saito, toshiyuki Kurosawa, Takao Akai, Takahiro Oikawa, shintaro Yokoyama, Hiroshi Funakubo

    Proc. Mater. Res. Soc.,   U13.4.   221   2002

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  • Novel Candidate of c-axis oriented BLsf thin films for high-capacitance condenser

    Takashi Kojima Yukio, Sakashita, Takayuki Watanabe, Kazumi Kato, Hiroshi Funakubo

    Proc. Mater. Res. Soc.   U15.1   221   2002

  • Enhancemant of Remanent Polarization of BIT-Based Thin Films by Ti-site Substitution Using Ions with High Charge Valences

    Hiroshi Uchida Iaso Okada Hirofumi, Matsuda Takashi Iijima, Takayuki Watanabe, Hiroshi Funakubo

    Mater. Res. Soc.   U12.1   460   2002

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  • Preparation and Characterization of a- and b-axis oriented epitaxially grown Bi_4_Ti_3_O_12_-based Thin Films

    Takayuki Watanabe, Hiroshi Isa Atsushi, Sasaki Mamoru, Yoshimoto Minoru, Osada Yuji Noguchi, Masaru Miyayama Keisuke Saito Toshimasa Suzuki, Masayuki nFujimo

    Technical Rep. IEICE   SDM- 2001 ( 254 )   1 - 5   2002

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  • Property Design of Bi_4_Ti_3_O_12_-based Thin Films Using Site-Engineering Concept

    Hiroshi Funakubo, Takayuki Watanabe Tomohiro, Sakai Takashi, Kojima Minoru, Osada Yuji Noguchi, Masaru Miyayama Takashi Iijima Hirofumi, Matsuda, Hiroshi Uchi

    Technical Rep. IEICE   SDM-2001 ( 254 )   19 - 24   2002

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  • Effect of co-substitution of La and V in Bi_4_Ti_3_O_12_ Thin Films on the Low Temperature Deposition

    Takayuki Watanabe, Hiroshi Funakubo, Minoru, Osada Yuji Noguchi, Masaru Miyayama

    Appl.Phys.Lett.   80 ( 1 )   100 - 103   2002

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  • Low Temperature Preparation of High-quolity Pb(Zr,Ti)O_3_ Films by Metal Organic Chemical Vapor Deposition With High Quolity

    Hiroshi Funakubo Kuniharu Nagashima Masanori Aratani, Kouji Tokita, Takahiro Oikawa Tomohiko Ozeki, Keisuke Saito

    Proc. Metar.Res.Soc.   688 ( C1.1 )   1 - 11   2002

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  • Conductive mechanism of La-, Nb-doped BaTiO_3_ Thin Films by Doping MOCVD

    Daisuke Nagano, Mitsunori Sugiura, Naoki Wakiya, Hiroshi Funakubo, Kazuo, Shinozaki Nobuyasu Mizutani

    Key.Eng.Mater.   216   87 - 90   2002

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  • Preparation and Characterization of c-axis Oriented Epitaxial Bi_2_VO_5.5_ Thin Films Prepared by Metalorganic Chemical Vapor Deposition

    Katsuyuki Ishikawa Tomohiro, Sakai Takayuki Watanabe, Hiroshi Funakubo

    Key.Eng.Mater.   214-215   189 - 192   2002

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  • Orientation of Bi_4_Ti_3_O_12_ based Ferroelectric Thin Film Prepared on Various Kinds of Substrates by Metalorganic Chemical Vapor Deposition

    Takayuki Watanabe, Keisuke Saito, Hiroshi Funakubo

    J.Crystal Growth   235   389 - 393   2002

  • Preparation and Characterization of a-and c-axis-oriented Epitaxially Grown Bi_4_Ti_3_O_12_-Based Thin Films on Rutile-type Oxides

    Takayuki Watanabe, Keisuke Saito Minoru, Osada Hiroshi Funakubo Takayuki Watanabe Keisuke Saito Minoru, Osada, Hiroshi Funakubo

    Proc. Mater.Res.Soc   688 ( C6.2 )   1 - 6   2002

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  • Preparation of SrBi_2_Ta_2_O_9_ thin films by liquid-delivery MOCVD without addition of solvents

    Norimasa Nukaga, Hirofumi Ono Yataya, Shida Hideaki Machida Toshie Suzuki, Hiroshi Funakubo

    IFFF2002   30H-TS-1P   252   2002

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  • Ln (Ln=La, Pr, Nd, Sm) Dependence On Ferroelectric Property of (Bi_3.25_Ln_0.75_)(Ti_2.97_V_0.03_)O_12_ Thin Films Prepared at low Deposition Temperature

    T. Sakai, T.Watanabe, T.Kojima, M.Osada, Y.Noguchi, M.Miyayama, Hiroshi Funakubo

    IFFF2002   29A-TF3-2C   42   2002

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  • Wide process window of low-temperature-deposited Pb(Zr,Ti)O_3_ films by pulsed-MOCVD

    G. Asano, T.Oikawa, K.Okada, H.Funakubo

    IFFF2002   29H-TP-23P   138   2002

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  • Preparation of SrBi2(Ta0.7Nb0.3)2O9-Bi 3TaTiO9 solid solution films by MOCVD and their properties

    Masatoshi Mitsuya, Minoru Osada, Keisuke Saito, Hiroshi Funakubo

    Journal of Crystal Growth   237-239 ( 1 )   473 - 477   2002

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  • Synthesis and Ferroerectlic Properties of Sr- and Nb-codoped Bi_4_-xSrxTi_3_-xNbxO_12_ Thin Films by Sol-Gel-Methods

    Hifumi Matsuda, Takashi Iijima Hiroshi Uchida Isao, Okada Takayuki Watanab, Hiroshi Funakubo

    Proc. Mater Res.Soc.   688 ( C4.14 )   1 - 5   2002

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  • Fabrication of V-substituted (Bi,M)_4_Ti_3_O_12_[M=Lanthanoides] Thin Films by Chemical Solution Deposition Methods

    H.Uchida, H.Toshikawa, I.Okada, H.Matsuda, T.Iijima T.Watanabe, H.Funakubo

    Proc. Mater Res.Soc.   688 ( C2.3 )   1 - 6   2002

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  • Hetero-epitaxial Growth of (1,0,m+1) one-axis-oriented Bithmuth Layered Structured Ferroelectrics Thin Films Diectly Crystallized by MOCVD

    Norimasa Nukaga, Takayuki Watanabe Tomohiro, Sakai Toshimasa Suuzuki, Yuji Nishi, Masayuki Fujimoto, Hiroshi Funakubo

    Proc. Mater.Res.Soc.   688 ( C2.21 )   1 - 6   2002

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  • Orientation control of Pb(Zr,Ti)O_3_(PZT) thick film prepared by high-speed deposition and their property

    S. Yokoyama, T.Ozeki, T.Oikawa, Y.Ichikawa, Y.Yamashitra, T.Ochiai, H.Funakubo

    IFFF2002   29B-P12-6C   52   2002

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  • Thermal Stability of SrRuO_3_-Bottom-Electrode and the Crystal Structure and the Electrical Property of PZT Thin Films Deposited on SrRuO_3_

    Kenji Takahashi, Takahiro Oikawa, Keisuke Saito Hironori Fujisawa, Masaru Shimizu, Hiroshi Funakubo

    IFFF2002   31G-EL-6P   360   2002

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  • Preparation and characterization of site-engineered Bi_4_Ti_3_O_12_-based thin films by MOCVD

    T. Watanabe, T.Kojima, T.Sakai, H.Funakubo, M.Osada K.Saito

    IFFF2002   30H-TB-13P   261   2002

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  • A Novel Ruthenium Precursors for MOCVD Without Seed Ruthenium Layer

    Tetsuo Shibutami Kazuhisa Kawano, Noriaki Ooshima Shintaro yokoyama, Hiroshi Funakubo

    Proc. Mater. Res. Soc.   U12.7.   462   2002

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  • Preparation of SrBi2Ta2O9 Thin Films by Liquid-Delivery MOCVD without Additional Solvents

    Norimasa Nukaga, Hirofumi, Ono Takuya, Shida Hideaki Machida Toshie Suzuki Hiroshi Funakubo

    Integ. Ferro.   45   215 - 222   2002

  • Low-Leakage Epitaxial PZT Thin Films Grown on Ir/MgO Substrates by Metalorganic Chemical Vapor Deposition,

    Takahiro Oikawa, Kenji Takahashi Junich, Ishida Y. Ichikawa, T. Ochiai, Keisuke Saito, A. Sawabe, Hiroshi Funakubo

    Integ. Ferro.   46   55 - 64   2002

  • Fabrication of M3+-Substituted and M3+/V5+-Cosubstituted Bismuth Titanate Thin Films [M = Lanthanoid] by Chemical Solution Deposition Technique

    Hiroshi Uchida, Hiroki Yoshikawa Isao Okada Hirofumi, Matsuda Takashi Iijima, Takayuki Watanabe, Hiroshi Funakubo

    Jpn. J. Appl. Phys.   41 ( 11B )   6820 - 6824   2002

  • Role of Non-180.DEG.Domain Switching in Electrical Properties of Pb(Zr0.35, Ti0.65)O3 Thin Films.

    Saito Keisuke, Oikawa Takahiro, Kurosawa Toshiyuki, Akai Takao, Funakubo Hiroshi

    Japanese Journal of Applied Physics   41 ( 11B )   6730 - 6734   2002

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    Language:English   Publisher:The Japan Society of Applied Physics  

    Pb(Zr<FONT SIZE="-1">0.35</FONT>, Ti<FONT SIZE="-1">0.65</FONT>)O<FONT SIZE="-1">3</FONT> (PZT) thin films were deposited on platinum-coated silicon substrate at deposition temperatures ranging from 350°C to 580°C by pulsed metal organic chemical vapor deposition. The deposition temperature dependence of the film orientation was precisely determined by employing X-ray diffraction reciprocal space mapping and was compared to the remanent polarization obtained from polarization-electric field (P-E) hysteresis measurement. It was found that the film orientation changed from strong {111} to strong {100} with decreasing the deposition temperature and the ratios of the obtained remanent polarizations of the film were consistently explained by the estimated ratios of the remanent polarizations calculated from the film orientations assuming that non-180<FONT SIZE="-1">º</FONT> domains are strongly pinned and do not contribute to the obtained remanent polarization. The films deposited below approximately 400°C showed smaller remanent polarizations than those expected from the film orientations and this is attributed to the presence of an amorphous phase and the reduction of grain size.

    DOI: 10.1143/JJAP.41.6730

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  • Preparation of Orientation-Controlled Polycrystalline Pb(Zr,Ti)O3 Thick Films on (100)Si Substrates by Metalorganic Chemical Vapor Deposition and Their Electrical Properties.

    Yokoyama Shintaro, Ozeki Tomohiko, Oikawa Takahiro, Funakubo Hiroshi

    Japanese Journal of Applied Physics   41 ( 11B )   6705 - 6708   2002

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    Language:English   Publisher:The Japan Society of Applied Physics  

    2.0-μm-thick Pb(Zr<FONT SIZE="-1">x</FONT>Ti<FONT SIZE="-1">1-x</FONT>)O<FONT SIZE="-1">3</FONT> (PZT) films were grown with the deposition rate of 1.5 μm/h on (111)Pt/TiO<FONT SIZE="-1">2</FONT>/SiO<FONT SIZE="-1">2</FONT>/Si substrates at 600°C by metalorganic chemical vapor deposition (MOCVD). Moreover, their electrical properties were investigated as a function of the film thickness and the Zr/(Zr + Ti) ratio, x. The deposited films were preferentially (001)- and/or (100)-oriented regardless of x in the film. When the film thickness increased from 0.12 to 3.5 μm, the dielectric constant measured at room temperature increased from 500 to 1050 for Pb(Zr<FONT SIZE="-1">0.6</FONT>Ti<FONT SIZE="-1">0.4</FONT>)O<FONT SIZE="-1">3</FONT>, while it maintained an almost constant value of 500 for Pb(Zr<FONT SIZE="-1">0.35</FONT>Ti<FONT SIZE="-1">0.65</FONT>)O<FONT SIZE="-1">3</FONT>. Well-saturated P-E hysteresis loops were observed irrespective of x. Remanent polarization value was almost constant and was above 30 μC/cm<FONT SIZE="-1">2</FONT> in the film thickness range of 0.05 to 3.5 μm. On the other hand, the coercive field decreased monotonically with increasing film thickness and at about 2.0 μm thickness, it attained an almost constant value equivalent to the reported value for the PZT bulk ceramics.

    DOI: 10.1143/JJAP.41.6705

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  • Ferroelectricity of One-Axis-Preferred-Oriented Polycrystalline Pb(Zr,Ti)O3 Films Prepared by Pulsed-Metalorganic Chemical Vapor Deposition

    Hiroshi Funakubo, Masanori Aratani, Takahiro Oikawa, Kouji Tokita, Keisuke Saito

    J. Appl. Phys.   92 ( 11 )   6768 - 6772   2002

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  • Room-Temperature Epitaxial Growth of Indium Tin Oxide Thin Films on Si Substrates with an Epitaxial CeO2 Ultrathin Buffer

    J. Tashiro, A. Sasaki, S. Akiba, S. Satoh, T, Watanabe, H, Funakubo, M. Yoshimoto

    Thin Solid Films   ( 415 )   272 - 275   2002

  • Thermal Stability of SrRuO3 Bottom Electrode and Electrical Property of Pb(Zr,Ti)O3 Thin Film Deposited on SrRuO3

    Kenji Takahashi, Takahiro Oikawa, Keisuke Saito Hironori Fujisawa, Masaru Shimizu, Hiroshi Funakubo

    Jpn. J. Appl. Phys   41 ( 11B )   6873 - 6876   2002

  • Direct Crystallization and Characterization of Bi3TiTaO9 Thin Films Prepared by Metalorganic Chemical Vapor Deposition.

    Suzuki Muneyasu, Nagata Hajime, Nukaga Norimasa, Watanabe Takayuki, Funakubo Hiroshi, Takenaka Tadashi

    Japanese Journal of Applied Physics   41 ( 11B )   6825 - 6828   2002

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    Bi<FONT SIZE="-1">3</FONT>TiTaO<FONT SIZE="-1">9</FONT> (BTT) thin films were prepared on (111)Pt/Ti/SiO<FONT SIZE="-1">2</FONT>/Si substrate by electron cyclotron resonance plasma-enhanced metalorganic chemical vapor deposition (ECR-MOCVD). BTT thin films deposited at 550°C were found to consist of a single phase of bismuth layer structure by X-ray diffraction (XRD). This temperature was lower than that reported in the data for obtaining single phase SrBi<FONT SIZE="-1">2</FONT>Ta<FONT SIZE="-1">2</FONT>O<FONT SIZE="-1">9</FONT> (SBT) thin films prepared by MOCVD. Furthermore, the reciprocal space mapping of BTT thin films showed the (103)-preferred orientation of this film, as well as the orientation of SBT thin films. The dielectric constant, ε<FONT SIZE="-1">r</FONT>, and loss tangent, tan δ, of the BTT thin film were 180 and 3% at 1 MHz, respectively. An abrupt increase of the leakage current of this film was observed at about 280 kV/cm.

    DOI: 10.1143/JJAP.41.6825

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  • In-plane Long Lattice Matching of a-/b- axis Oriented Ferroelectric Bisumuth Layer-Structured Ferreoelectric Thin Films

    Takayuki Watanabe, Tomohiko, Sakai, Hiroshi Funakubo, Minor, Osada Masato Kakihana, Yuji Noguchi, Marau Miyayama

    Proc. Mater. Res. Soc.   ( U2.4 )   445   2002

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  • Seed Layer Free Rutehenium Precursor for MO-CVD

    N. Ohshima T, Shibutami, K. Kawao, S. Yokoyama, H. Funakubo

    202nd Meeting of Electrochmical Society   403   2002

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  • Characterization of HfO2 Films Grown on Silicon Substrate by metal-organic Chemical Vapor Deposition

    Eisuke Tokumitsu, Kenji Takahashi, Makoto Nakayam, Hiroshi Funakubo

    Fourth International Symposium on Control of Semiconductor Interface   2 - 10   2002

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  • MOCVD-PZT薄膜の電気特性に及ぼす出発原料の影響

    舟窪浩, 尾関朝彦

    第22回電子材料研究討論会   1B-09   30   2002

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  • X線回折法によるSi(111)基板上エピタキシャルβ-FeSi_2_薄膜の内部歪評価

    秋山賢輔, 木村武, 大屋誠志郎, 斉藤啓介, 舟窪浩

    応用物理学会2002年秋講演会   26p-ZC-18   1196   2002

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  • β-FeSi_2_初期層を用いたSi(100)およびSi(001)基板上へのβ-FeSi_2_薄膜のMOCVD合成

    木村武, 秋山賢輔, 金子智, 大屋誠志郎, 小沼誠司, 末益宗, 長谷川文夫, 舟窪浩

    応用物理学会2002年秋講演会   26p-ZC-17   1195   2002

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  • Hf[(C_2_H_5_)_2_]_4_から合成した高誘電率界面層を有するHfO_2_薄膜の特性評価

    高橋健治, 中山誠, 日野史郎, 舟窪浩, 徳光永輔

    応用物理学会2002年秋講演会   25a-C-2   721   2002

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  • Bi3TaTiO9のランタノイド置換による圧電性評価

    鈴木宗泰, 永井浩肇, 舟窪浩 竹中正

    第22回電子材料研究討論会   2A-03   36   2002

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  • “Size effect” of Ferroelectric Thin Films. -Comparison of Simple Perovskite Ferroelectric and Bismuth Layer Structured Ferroelectric.

    Hiroshi Funakubo, Takayuki Watanabe, Takashi Kojima Hitoshi Morioka Gouji, Asano, Takahiro Oikawa, Keisuke Saito

    MRS-J   22   2002

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  • 環境適用型強誘電体の開発

    舟窪浩

    第36回CVD研究会講演会,   2002

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  • 環境適用型強誘電体の開発

    舟窪浩, 小島隆志, 酒井朋裕, 渡辺隆之

    第22回表面科学講演大会   1B01   29   2002

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  • Comparison of Crystal Structure and Electrical Properties of Tetragonal and Rhombohedral Pb(Zr,Ti)O3 Films Prepared at Low Temperature by Pulsed-Metalorganic Chemical Vapor Deposition, 92(9)(2002)

    Hiroshi Funakubo, Kouji Tokita, Takahiro Oikawa, Masanori Aratani, Keisuke Saito

    J. Appl. Phys.   92 ( 9 )   5448 - 5452   2002

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  • Preparation and characterization of a- and b-axis-oriented epitaxially-grown Bi_4_Ti_3_O_12_&#8211;Based Thin Films with Long Range Lattice Matching

    Takayuki Watanabe, Hiroshi Funakubo, Toshimasa Suzuki, Masayuki Fujimoto, Minoru Osada, Yuji Noguchi, Masaru Miyayama

    Appl. Phy. Letter.   81 ( 9 )   1660 - 1662   2002

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    DOI: 10.1063/1.1503850

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  • Growth of Environmental-Friendly b-FeSi2 Semiconductor Thin Film and Control of Electrical Property Using Si Doant

    K. Akiyama, T. Kimura, H. Funakubo

    MRS-J   G2-O03-D   156   2002

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  • Tetragonal and Rhombohedral Mixture Phase Composition in Pb(ZrxTi1-x)O3 System

    Keisuke Saito, toshiyuki Kurosawa, Takao Akai, Takahiro Oikawa, shintaro Yokoyama, Hiroshi Funakubo

    Proc. Mater. Res. Soc.,   U13.4.   221   2002

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  • Novel Candidate of c-axis oriented BLsf thin films for high-capacitance condenser

    Takashi Kojima Yukio, Sakashita, Takayuki Watanabe, Kazumi Kato, Hiroshi Funakubo

    Proc. Mater. Res. Soc.   U15.1   221   2002

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  • Enhancemant of Remanent Polarization of BIT-Based Thin Films by Ti-site Substitution Using Ions with High Charge Valences

    Hiroshi Uchida Iaso Okada Hirofumi, Matsuda Takashi Iijima, Takayuki Watanabe, Hiroshi Funakubo

    Mater. Res. Soc.   U12.1   460   2002

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  • Dopimg Effects

    Minoru Osada, Masato Kakihana, Yuji Noguchi, Marau Miyayama, Takayuki Watanabe, Hiroshi Funakubo

    Proc. Mater. Res. Soc.   U2.4   445   2002

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  • Piezoelectric Properties of Orientation-controlled PZT Thick Films prepared by Metalorganic Chemical Vapor Deposition

    S.Yokoyama, Y. Honda, T. Iijima, H, Matsuda, H. Funakubo

    MRS-J   K2-P12-M   215   2002

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  • Characterization of PLZT Thick Film Prepared by MOCVD

    Yoshihisa Honda, S.Yokoyama, H. Funakubo

    MRS-J   K2-P11-M   215   2002

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  • Contribution to a-domain on The Electrical Properties of Tetragonal Pb(Zr,Ti)O3 Thin Films

    Hitoshi Morioka, Gouji Asano, Takahiro Oikawa, Keisuke Saito, Hiroshi Funakubo

    MRS-J   K2-P08-M   214   2002

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  • Influence of Metal Mold Materials on Fluidity Length in the Chill-Vents

    Yaokawa Jun, Funakubo Tatsuya, Anzai Koichi, Yasuda Masato, Itamura Masayuki

    Journal of the Reports of the Japan Foundry Engineering Society Meeting   140   150 - 151   2002

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    DOI: 10.11279/jfeskouen.140_150

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  • Site definition and characterization of La-substituted Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition

    Takayuki Watanabe, Hiroshi Funakubo, Manabu Mizuhira, Minoru Osada

    Journal of Applied Physics   90 ( 12 )   6533 - 6535   2001.12

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    DOI: 10.1063/1.1417988

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  • Site definition and characterization of La-substituted Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition

    T Watanabe, H Funakubo, M Mizuhira, M Osada

    JOURNAL OF APPLIED PHYSICS   90 ( 12 )   6533 - 6535   2001.12

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  • Internal microstructure and formation mechanism of surface protrusions in Pb-Ti-Nb-O thin films prepared by MOCVD

    XD Liu, H Funakubo, S Noda, H Komiyama

    CHEMICAL VAPOR DEPOSITION   7 ( 6 )   253 - 259   2001.11

  • Characterization of ferroelectric property of c-axis- and non-c-axis-oriented epitaxially grown Bi2VO5.5 thin films

    T Sakai, T Watanabe, Y Cho, K Matsuura, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   40 ( 11 )   6481 - 6486   2001.11

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  • Low leakage current and good ferroelectric properties of SrBi<inf>2</inf>(Ta<inf>0.7</inf>Nb<inf>0.3</inf>)<inf>2</inf>O <inf>9</inf>-Bi<inf>3</inf>TiTaO<inf>9</inf> solid solution thin film

    Masatoshi Mitsuya, Norimasa Nukaga, Takayuki Watanabe, Hiroshi Funakubo, Keisuke Saito, Minoru Osada

    Applied Physics Letters   79   2067 - 2069   2001.9

  • Local epitaxial growth of (103) one-axis-oriented SrBi2Ta2O9 thin films prepared at low deposition temperature by metalorganic chemical vapor deposition and their electrical properties

    N Nukaga, M Mitsuya, T Suzuki, Y Nishi, M Fujimoto, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   40 ( 9B )   5595 - 5598   2001.9

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  • Preparation of high-quality ferroelectric thin films at low temperature

    FUNAKUBO Hiroshi

    OYOBUTURI   70 ( 9 )   1061 - 1066   2001.9

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    Language:Japanese   Publisher:The Japan Society of Applied Physics  

    DOI: 10.11470/oubutsu1932.70.1061

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  • Cation distribution and structural instability in Bi4-xLaxTi3O12

    M Osada, M Tada, M Kakihana, T Watanabe, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   40 ( 9B )   5572 - 5575   2001.9

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  • Epitaxial-grade polycrystalline Pb(Zr,Ti)O3 film deposited at low temperature by pulsed-metalorganic chemical vapor deposition

    Masanori Aratani, Takahiro Oikawa, Tomohiko Ozeki, Hiroshi Funakubo

    Applied Physics Letters   79 ( 7 )   1000 - 1002   2001.8

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    DOI: 10.1063/1.1391229

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  • Raman spectroscopic fingerprint of ferroelectric SrBi2Ta2O9 thin films: A rapid distinction method for fluorite and pyrochlore phases

    M Osada, M Kakihana, M Mitsuya, T Watanabe, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   40 ( 8B )   L891 - L893   2001.8

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  • Crystal structure comparison between conductive SrRuO3 and CaRuO3 thin films

    N Higashi, T Watanabe, K Saito, Yamaji, I, T Akai, H Funakubo

    JOURNAL OF CRYSTAL GROWTH   229 ( 1 )   450 - 456   2001.7

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  • Property improvement of 75 nm-thick directly-crystallized SrBi2Ta2O9 thin films by pulse-introduced metalorganic chemical vapor deposition at low temperature

    M Mitsuya, N Nukaga, T Watanabe, H Funakubo, K Saito

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   40 ( 7B )   L758 - L760   2001.7

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  • Chemical stability of SrBi2Ta2O9 thin films prepared by metalorganic chemical vapor deposition

    N Nukaga, M Mitsuya, H Funakubo

    IEICE TRANSACTIONS ON ELECTRONICS   E84C ( 6 )   791 - 795   2001.6

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  • Low temperature direct crystallization of SrBi2(Ta1-xNbx)(2)O-9 thin films by thermal metalorganic chemical vapor deposition and their properties

    M Mitsuya, N Nukaga, K Saito, M Osada, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   40 ( 5A )   3337 - 3342   2001.5

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  • Orientation dependence of ferroelectricity of epitaxially grown Pb(ZrxTi1-x)O-3 thin films prepared by metalorganic chemical vapor deposition

    K Nagashima, M Aratani, H Funakubo

    JOURNAL OF APPLIED PHYSICS   89 ( 8 )   4517 - 4522   2001.4

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  • Low temperature deposition of Pb(Zr,Ti)O-3 film by source gas pulse-introduced metalorganic chemical vapor deposition

    M Aratani, T Ozeki, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   40 ( 4A )   L343 - L345   2001.4

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  • Film thickness dependence of ferroelectric properties of c-axis-oriented epitaxial Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition

    T Watanabe, A Saiki, K Saito, H Funakubo

    JOURNAL OF APPLIED PHYSICS   89 ( 7 )   3934 - 3938   2001.4

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  • Influence of deposition temperature on the microstructure of Pb-Ti-Nb-O thin films by metallorganic chemical vapor deposition

    XD Liu, H Funakubo, S Noda, H Komiyama

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY   148 ( 3 )   C227 - C230   2001.3

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  • 技術講演会 強誘電体薄膜研究の最先端における計測・制御

    舟窪 浩

    Readout : Horiba technical reports   ( 22 )   31 - 35   2001.3

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  • 有機金属化学気相法による強誘電体メモリー薄膜作製—特集 高機能を付与する成膜技術最前線 ; 開発事例編

    舟窪 浩, 荒谷 政則

    工業材料 = Engineering materials   49 ( 3 )   54 - 57   2001.3

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    Other Link: https://ndlsearch.ndl.go.jp/books/R000000004-I5667235

  • Ferroelectric property of epitaxial Bi4Ti3O12 films prepared by metalorganic chemical vapor deposition

    T Watanabe, H Funakubo, K Saito

    JOURNAL OF MATERIALS RESEARCH   16 ( 1 )   303 - 307   2001.1

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  • 材料プロセッシングにおける形体・構造制御のためのエキスパートシステムの開発

    野田優, 辻佳子, 大沢利男, 小宮山宏, 奥山喜久夫, 島田学, 江頭靖幸, 松方正彦, 野村幹弘, 舟窪浩 KimHeeJoon, 井原学, 高見誠一

    化学工学会第65回年会   2001

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  • Domain Switching in Pb(Zr_0.65_Ti_0.35_)O_3_ Thin Films

    Keisuke Saito, Takahiro Oikawa, Toshiyuki Kurosawa, Takao Akai, Hiroshi Funakubo

    Tarns.Mater.Res.Soc.Jpn.   27 ( 1 )   215 - 218   2001

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  • Low-Pressure Deposition of Pb(Zr,Ti)O_3_ Films by MOCVD at Low temperature

    Gouji Asano, Takahiro Oikawa, Kouji Tokita, Kiyoshi Okada, Hiroshi Funakubo

    Trans Mater.Res.Soc.Jpn.   27 ( 1 )   223 - 226   2001

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  • Compositon Control of Lead Zirconate Titanate Thin Films Using Mixed Solutions of PbTiO_3_ and PbZrO_3_

    Takashi Iijima, G.He, Hiroshi Funakubo

    Integ.Ferr.   36   255 - 263   2001

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  • エピタキシャルPZT薄膜の強誘電性の組成および結晶方位依存性”

    及川貴弘, 斎藤啓介, 舟窪浩

    日本セラミックス協会、電子材料研究討論   2B-01   17   2001

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  • Bi_4_Ti_3_O_12_強誘電体の元素置換効果とソフトモードによる特性デザイン

    長田実, 渡辺隆之, 舟窪浩, 多田大, 垣花眞人

    第14回日本セラミックス協会秋季シンポジウム   1E13   40   2001

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  • ローカルエピキシャル成長を利用した単配向Bi層状強誘電体薄膜の低温合成

    額賀紀全, 三矢昌俊, 舟窪浩, 鈴木利昌, 西湯ニ 藤本正之

    第14回日本セラミックス協会秋季シンポジウム   3D05   239   2001

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  • ランタノイド置換チタン酸ビスマス薄膜のMOCVD合成と評価』

    渡辺隆之, 舟窪浩

    第14回日本セラミックス協会秋季シンポジウム   3F07   239   2001

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  • Property improvement of SrBi2Ta2O9 thin films prepared at 600 degrees C by pulse-MOCVD

    H Funakubo, M Mitsuya, T Watanabe, N Nukaga

    INTEGRATED FERROELECTRICS   36 ( 1-4 )   103 - 110   2001

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  • Characterization of Pb(Zr,Ti)O_3_ Thin Films Prepared on Various Substrates by Source Gas Pules-Introduced Metalorganic Organic Chemical Vapor Deposition

    Masanori Aratani Kuniharu Nagashima Hiroshi Funakubo

    Ferroelectrics   260   69 - 74   2001

  • Effect of composition of MOCVD-SrRuO3 top electrode of (Pb,La)(Zr,Ti)O-3 capacitor on H-2 degradation

    N Okuda, N Higashi, T Watanabe, H Funakubo

    FERROELECTRICS   260 ( 1-4 )   401 - 406   2001

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  • Characterization of low temperature preparation of SrBi2Ta2O9 thin films by ECR plasma enhanced metalorganic chemical vapor deposition

    N Nukaga, M Mitsuya, H Machida, H Funakubo

    FERROELECTRICS   260 ( 1-4 )   395 - 400   2001

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  • Comparison of Epitaxial and Polycrystalline (001)- and (100)- oriented Tetragonal PZT Films Prepared by MOCVD

    Tomohiko Ozeki, Shintaro Yokoyama, Kenji Takahashi Takahiro Oikawa, Yasuko Ichikawa, Hiroshi Funakubo

    FeRAM 2001   2001. Nov.20 ( Gotenba, Japan )   93 - 94   2001

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  • Preparation and characterization of a-and b-axes oriented epitaxially grown Bi_4_Ti_3_O_12_-based Thin Films with Long-range lattice matching

    Takayuki Watanabe, Hiroshi Funakubo

    FeRAM 2001   2001. Nov.19-21 ( Gotenba, Japan )   164 - 165   2001

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  • MOCVD法で作製したPZT薄膜における電気特性の結晶方位依存性

    時田浩司, 荒谷政則, 尾関朝彦, 舟窪浩

    日本セラミックス協会、電子材料研究討論会   2B-02   72   2001

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  • (Bi4-xPrx)4(Ti3-yVy)3O12薄膜の成長温度の低温化と特性改善

    酒井朋裕, 渡辺隆之, 小島隆志, 長田実, 水平学, 舟窪浩

    応用物理学会2001年秋   12p-ZR-5   387   2001

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  • B及びPのドーピングによるβ-FeSi2薄膜の電気伝導特性制御

    秋山賢輔, 木村武, 大屋誠志郎, 栗原幸男, 熊谷正夫, 薮田湖納美, 高野弘道, 舟窪浩

    応用物理学会2001年秋   12p-YA-5   1024   2001

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  • MOCVD合成したβ-FeSi2薄膜の結晶性と電気特性の関係

    木村武, 秋山賢輔, 大屋誠志郎, 栗原幸男, 熊谷正夫, 薮田湖納美, 高野弘道, 舟窪浩

    応用物理学会2001年秋   12p-YA-4   1024   2001

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  • Bi4Ti3O12強誘電体の元素置換効果とソフトモードによる設計

    長田実, 渡辺隆之, 酒井朋裕, 舟窪浩, 多田大, 垣花眞人

    応用物理学会2001年秋   12p-ZR-7   388   2001

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  • 長周期格子マチング成長したa,b軸配向エピタキシャルBLSF薄膜の合成と特性評価

    渡辺隆之, 高橋健治, 及川貴弘, 斎藤啓介, 舟窪浩

    応用物理学会2001年秋   12p-ZR-6   387   2001

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  • 化学的溶液法によるV置換(Bi,La)4Ti3O12薄膜の作製

    内田寛, 岡田烈, 松田弘文, 飯島高志, 渡辺隆之, 舟窪浩

    応用物理学会2001年秋   12p-ZR-2   386   2001

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  • 単原料ボトルからの溶液器化MOCVD法によるSrBi2Ta2O9薄膜の高再現合成

    額賀紀全, 町田英明, 鈴木淑恵, 小野弘文, 志田卓也, 舟窪浩

    応用物理学会2001年秋   12a-ZR-4   384   2001

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  • Fabrication of Lead Ziroconium Titaniium Thin Films Usding a Different Process of Lead Zirconium and Lead Titanium Multi Layer Films

    Gang He, Takahashi Iijima, Hiroshi Funakubo

    ICCGG-13/ICVGE-11   02a-S11-16   331   2001

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  • Domain Structures and Ferroelectric Propertuies of Epitaxial Pb(Zr,Ti)O3 Thin Films

    Keisuke Saito, Takahiro Oikawa, Isao, Yamaji Takao Akai, Hiroshi Funakubo

    ICCGG-13/ICVGE-11   03a-S11-06   440   2001

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  • (Bi, L)4(Ti, V)3O12エピタキシャル薄膜を用いた置換効果の評価

    小島隆志, 渡辺隆之, 酒井朋裕, 水平学, 斎藤啓輔介, 舟窪浩

    応用物理学会2001年秋   12p-ZR-4   387   2001

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  • 多結晶(Bi,Nd)4(Ti,V)3O12薄膜のMOCVD合成と特性評価

    渡辺隆之, 小島隆志, 酒井朋裕, 長田実, 野口祐ニ, 宮山勝 舟窪浩

    応用物理学会2001年秋   12p-ZR-3   387   2001

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  • Characterization of ferroelectric property of c-axis and non-c-axis oriented epitaxially grown bismuth layer-structured ferroelectric thin films with different m-numbers prepared by MOCVD

    Takayuki Watanabe, Tomohiro Sakai, Atsushi Saiki, Keisuke Saito, Toyohiko Chikyo, Hiroshi Funakubo

    Materials Research Society Symposium - Proceedings   655   cc1.9.1- cc1.9.6.   2001

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  • エピタキシャル成長Pb(Zr,Ti)O3圧膜のMOCVD合成

    尾関朝彦, 横山信太郎, 高橋健冶, 及川貴弘, 舟窪浩

    応用物理学会2001年秋   13p-ZR-5   396   2001

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  • Dependence of crystallographic orientation for rhombohedral PZT thin films on their electrical properties

    Kouji Tokita, Masanori Aratani, Hiroshi Funakubo

    Ferroelectrics   260 ( 1 )   45 - 50   2001

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  • Internal Microstructure and Formation Mechanism of Surface Protrusions in Pb-Ti-Nb-O Thin Films Prepared by MOCVD

    Xue-Dond Liu, Hiroshi Funakubo Sururu Noda, Hiroshi Komiyama

    Chem.Vapor Deposition   7 ( 6 )   253 - 259   2001

  • Leakage Property Improvement of PLZT Capacitor Using CaRuO_3_ Top Electrode

    Hiroshi Funakubo, Norikazu Okuda Noriyuki Higashi

    Proc.Mater Res.Soc.   655   cc4.6   2001

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  • Preparation and Characterization of Epitaxial SrBi_2_Ta_2_O_9_ Thin Films

    Nisi Masayuki Fujimoto Masanori, Nukaga Isao, Yamaji Takao Akai, Hiroshi Funakubo

    Proc.Mater Res.Soc.   655   cc10.13   2001

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  • Pt/Ti/SiO2/Si基板上に成膜したPb(Zr,Ti)O3薄膜の結晶配向と電気特性の相関

    斎藤啓介, 及川貴弘, 山路功, 赤井孝夫, 舟窪浩

    応用物理学会2001年秋   13p-ZR-3   396   2001

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  • 正方晶および菱面体晶Pb(Zr,Ti)O3薄膜の低温合成

    時田浩司, 荒谷正則, 浅野剛司, 尾関朝彦, 舟窪浩

    応用物理学会2001年秋   13p-ZR-2   395   2001

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  • 低温合成MOCVD-PZT薄膜の高再現性の検討

    浅野剛治, 及川貴弘, 時田浩司, 岡田清, 舟窪浩

    応用物理学会2001年秋   13p-ZR-1   395   2001

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  • エピタキシャル成長SrRuO3薄膜特性の成長法依存性

    高橋健治, 及川貴弘, 斎藤啓介, 舟窪浩

    応用物理学会2001年秋   13a-ZR-8   394   2001

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  • エピタキシャル成長Pb(Zr,Ti)O3薄膜の強誘電特性の基板種および電極種依存性

    及川貴弘, 高橋健治, 石田純一, 斎藤啓介, 澤邊厚仁, 舟窪浩

    応用物理学会2001年秋   13p-ZR-4   .396   2001

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  • Pb(ZrxTi1-x)O3のエピタキシャル薄膜における結晶ドメイン構造2

    斎藤啓介, 及川貴弘, 山路功, 赤井孝夫, 舟窪浩

    応用物理学会春期予稿集   552   2001

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  • MOCVD成長エピタキシャル薄膜を用いたBLSF(m=3)の電機特性評価

    酒井朋裕, 渡辺隆之, 長田実, 野口裕ニ, 宮山勝, 斎藤啓介, 舟窪浩

    応用物理学会春期発表会   30p-YA-13   561   2001

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  • Pb(ZrxTi1-x)O3用MOCVD原料系の検討

    尾関朝彦, 荒谷政則, 東典行 舟窪浩

    応用物理学会春期予稿集   31-Ya-3   573   2001

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  • New Control Method of Low Temaperature Deposition of Metal Oreganic Chemical Vapor Deposition. (2) ZrO2 Film Preparation

    Noriyuki Higashi, Yasushi Murakami, Hideaki Matchida, Hiroshi Funakubo

    The Second Asian Conference on Chemical Vapor Deposition   207-1209.   2001

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  • New Control Method of Low Temaperature Deposition of Metal Oreganic Chemical Vapor Deposition. (1) SrRuO3 Film Preparation

    Noriyuki Higashi, Yasushi Murakami, Hideaki Matchida, Hiroshi Funakubo

    The Second Asian Conference on Chemical Vapor Deposition   169 - 171   2001

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  • Property improvement of SrBi2Ta2O9 thin films prepared at 600 degrees C by pulse-MOCVD

    H Funakubo, M Mitsuya, T Watanabe, N Nukaga

    INTEGRATED FERROELECTRICS   36 ( 1-4 )   103 - 110   2001

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  • Preparation of Bi2WO6 Thin Films by MOCVD and its Electrical Character

    Katsuyuki Ishikawa, Takayuki Watanabe, Hiroshi Funakubo

    Thin Solid Films   392   128 - 133   2001

  • Pb(ZrxTi1-x)O3薄膜の強誘電特性の組成および結晶方位依存性

    及川貴弘, 荒谷政則, 斎藤啓介, 舟窪浩

    応用物理学会春期予稿集   574   2001

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  • Low temperature Deposition of Epitaxial-Grade PZT Films by MOCVD

    Hiroshi Funakubo, Masnori Aratani Takahiro Oikawa, Keisuke Saito

    The 10 th US-Japan Seminor on Dielectrics and Piezoelectric Ceramics   Providence   131 - 134   2001

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  • Preparation of SrBi2(Ta0,7Nb0.3)2O9-Bi3TiTaO9 Solid Solution Films by MOCVD and Their Property

    Msasatoshi Mitsuya, Hiroshi Funakubo

    ICCGG-13/ICVGE-11   TG07 ( 02 )   .444.   2001

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  • Metal Organic Chemical Vapor Deposition Growth of Epitaxial (Sr,Ca)RuO3 Thin Films with different Orientation as Bottom Electrode for Epitaxail Ferroelectric Thin Film

    Hiroshi Funakubo, Takahiro Oikawa Boriyuki Higashi, Keisuke Saito

    ICCGG-13/ICVGE-11   TG07 ( 01 )   328   2001

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  • Property of V- and W substituted Bi4Ti3O12 Thin Films by MOCVD and Their Electyrical Property

    Tomohiro Sakai, Takayuki Watanabe, Minoru, Osada Yuuji Noguchi, Masaru Miyayama, Hiroshi Funakubo

    ICCGG-13/ICVGE-11   03a-S11-14   444   2001

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  • Composition and Orienatation Dependence of Ferroelerectric Properties of Pb(ZrxTi1-x)O3 Thin Films Grwon by MOCVD

    Takahiro Oikawa, Masanori Aratani Keisuke Saito, Hiroshi Funakubo

    ICCG-13/ ICVGE-11   02a-S11-12   329   2001

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  • Property Desighn of the BiT-based Ferroelectric Thin Films by Site Engineering

    Takayuki Watanabe Tomohiro, Sakai Minoru, Osada Yuuji Noguchi, Masaru Miyayama, Hiroshi Funakubo

    ICCGG-13/ICVGE-11   03a-S11-14   445   2001

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  • Highly Conducting Indium-Tin-Oxide Transparent Films Favricated by Spray CVD Using Ethanol Solution of Indium(III) Chloride and Tin(II) Chloride

    Yutaka Sawada, Chikako Kobayashi, Shigeyuki Seki, Hiroshi Funakubo

    The Second Asian Conference on Chemical Vapor Deposition Gyeongju   Asaian-CVD   120 - 121   2001

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  • 走査型非線型誘電率顕微鏡を用いた強誘電体層状化合物の原子分解測定

    長康雄, 松浦かおり, 舟窪浩, 入江寛, 宮山勝, 野口祐ニ

    応用物理学会春期発表会   30p-YC-2   563   2001

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  • MOCVD合成したFe-Si系薄膜特性のFe/Si組成依存

    秋山賢輔, 大屋誠志郎, 熊谷正夫, 沼田乾, 小沼誠司, 薮田湖納美, 木枝暢夫, 舟窪浩

    応用物理学会春期発表会   30p-YA-14   561   2001

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  • 基板昇温雰囲気のPb(Zr,Ti)O3成膜温度に及ぼす影響

    時田浩司, 荒谷政則, 舟窪浩

    応用物理学会春期発表会   31a-YA-4   573   2001

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  • La置換Bi4Ti3O12のサイト選択性と構造転移

    長田実, 渡辺隆之, 舟窪浩, 多田大, 垣花眞人

    応用物理学会春期発表会   30p-YA-14   561   2001

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  • ローカルエピタキシャル成長を用いた(1,0,m+1)単配向Bi層状強誘電体薄膜の低温合成とその特性評価

    額賀紀全, 三矢昌俊, 鈴木利昌, 西湯ニ, 藤本正之, 舟窪浩

    強誘電体応用会議   1-T-31   117 - 118   2001

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  • Bi4-xLaxTi3O12のサイト選択性と構造相転移

    長田実, 多田大, 垣花眞人, 渡辺隆之, 舟窪浩

    強誘電体応用会議   1-B-2   143 - 144   2001

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  • Composition Dependence of Phase and Epitaxial Property of Fe-Si Thin Film Prepared by MOCVD

    K.Akiyama, H. Funakubo

    ICCGG-13/ICVGE-11   G04-4   323   2001

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  • Pb(Zr_0.35_Ti_0.65_)O_3_薄膜における90°ドメインの挙動121

    斎藤啓介, 黒澤利行, 赤井孝夫, 及川貴弘, 舟窪浩

    13 th Symposium of The MRS Japan   F2-004   121   2001

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  • Preparation and Characterization of 1-and c-axis oriented Epitaxially Grown Bi_4_Ti_3_O_12_ Based Thin Films With Long Range Lattice Matching

    Takayuki Watanaba, Hiroshi Funakubo

    Mater.Res.Soc.Meeting   Nov.22(2001) Boston ( c4.15 )   53   2001

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  • Fabrication of Vanadium-Substituted (Bi,M)_4_Ti_3_O_12_[M=lanthanoide] Thin Films By Chemical Solution Deposition Methods Nov., p.50

    Hiroshi Uchida, Hiroki Yoshikawa, Kana, Okamura Isao, Okada Takayuki Hirofumi, Matsuda Takashi Iijima Watanaba, Hiroshi Funakubo

    Mater.Res.Soc.Meeting   21(2001) Boston, ( c4.15 )   50   2001

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  • Syntheisi and Ferroerectricirty of Sr- and Nd-Doped Bi_4_-xSrxTi_3_-xNbyO_12_ Thin Films by Sol-Gel Methods

    Hirofumi Matsuda, Takashi Iijima Hiroshi Uchida Isao, Okada Takayuki Watanaba, Hiroshi Funakubo

    Mater.Res.Soc.Meeting   Nov.21(2001) Boston ( c4.14 )   49   2001

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  • 低温でのMOCVD法によるPZT薄膜の低圧合成

    浅野剛司, 岡田清, 及川貴弘, 尾関朝彦, 時田浩司, 舟窪浩

    13 th Symposium of The MRS Japan   F2-P09 ( B )   122   2001

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  • Large Remanet Polarization of (Bi,Nd)_4_Ti_3_O_12_ Epitaxial Thin Films Grownby Metal Organic Chemical Vapor Deposition

    Takashi Kojima, Takayuki Watanabe Tomohiro, Sakai Hiroshi Funakubo Keisuke Saito, Minoru Osada

    FeRAM 2001   2001. Nov.19-21 ( Gotenba, Japan )   93 - 94   2001

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  • Catioic Modification of Bi_4_Ti_3_O_12_ Ferroerectrics and Property Desighn by Raman Spectroscopy

    Minoru Osada, Masato Kakihana, Takayuki Watanaba, Hiroshi Funakubo

    Mater.Res.Soc.Meeting   Nov.21(2001) Boston ( c4.10 )   49   2001

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  • Heteroepitaxial Growth of (1,0,m+1) One-axis Oriented BLSF Thin Films Directly Crystallized by MOCVD

    Norimasa Nukaga, Takayuki Watanaba, Hiroshi Funakubo

    Mater.Res.Soc.Meeting   Nov.21(2001) Boston ( c2.2 )   45   2001

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  • Orientation Dependence of Electrical Properties of Low Temperature-grown Pb(Zr_0.35_Ti_0.65_)O_3_ Thin Films by MOCVD

    Keisuke Saito, Takahiro Oikawa Toshiyuki Kurosawa, Takao Akai, Hiroshi Funakubo

    FeRAM 2001   2001. Nov.19-21 ( Gotenba, Japan )   86 - 87   2001

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  • Effect of Strain in SrRuO_3_ Bottom Electrode on the Crystal Structure and the Electric Property of PZT Thin Film

    Kenji Takahashi, Takahiro Oikawa, Keisuke Saito Hironori Fujisawa, Masaru Shimizau, Hiroshi Funakubo

    FeRAM 2001   2001. Nov.19-21 ( Gotenba, Japan )   122 - 123   2001

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  • Application Study for the Vapor Phase Monitoring in MOCVD PZT Process by FTIR

    Tsukasa Satake, Hiroshi Funakubo

    The Second Asian Conference on Chemical Vapor Deposition Gyeongju   Asaian-CVD   120 - 121   2001

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  • Pb(Zr_0.35_Ti_0.65_)O_3_薄膜における90°ドメインの挙動/

    酒井朋裕, 渡辺隆之, 小島隆志, 長田実, 水平学, 舟窪浩

    13 th Symposium of The MRS Japan   F2-P10-   123   2001

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  • MOCVD法によるBi3TiTaO9薄膜の直接合成及び評価

    鈴木宗泰, 三矢昌俊, 額賀紀全, 渡辺隆之, 竹中正

    応用物理学会春期発表会   30p-YA-9   560.   2001

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  • Domain Switching in Epitaxial Grown Pb(Zr,Ti)O3 Thin Films

    K.Saito, M.Aratani, I.Yamaji, T.Akai, H.Funakubo

    ISIF 2001   7.1.2C   315   2001

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  • Combinatorial approach for ferroelectric thin film using solution based process

    H Funakubo, G He, T Iijima

    COMBINATORIAL AND COMPOSITION SPREAD TECHNIQUES IN MATERIALS AND DEVICE DEVELOPMENT II   4281   77 - 86   2001

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  • Low Leakage and High Ferroerectricity of Defect-free SBTN Based Ferroelectric Material

    Masanori Mitsuya Norimasa Nukaga Takayuki Watanabe, Hiroshi Funakubo

    Appl.Phys.Lett.,   79 ( 13 )   2067 - 2069   2001

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  • Crystal Structure Comparison Between Conductive SrRuO3 and CaRuO3 Thin Films

    N.Higashi T.Watanabe, K.Saito, Y.Yamaji, T.Akai, H.Funakubo

    J.Cryst.Growth   229   450 - 456   2001

  • 触媒反応を用いたMOCVD原料の分解温度制御

    東典行, 尾関朝彦, 村上泰, 町田英明, 舟窪浩

    応用物理学会春期発表会   30p-YA-9   560   2001

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  • A new combinatorial experimental method for preparation of PZT thin films from Pb, Zr and Ti metal organic chemical sauces

    G He, T Iijima, H Funakubo, Z Wang

    COMBINATORIAL AND COMPOSITION SPREAD TECHNIQUES IN MATERIALS AND DEVICE DEVELOPMENT II   4281   27 - 35   2001

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  • MOCVD Growth and Structure Analysis of High Conductive Epitaxial SrRuO3 Thin films With Different Orientation

    Takahiro Oikawa, Noriyuki Higashi Masahiro Aratani, Keisuke Saito, Hiroshi Funakubo

    Tras Matre Res Soc   26 ( 1 )   27 - 30   2001

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  • コンビナトリアル手法を用いたLead-TitaniumとLead Zirconium 金属有機溶液によるPZT薄膜の作製(2)

    何崗 飯島高志, 舟窪浩

    158) 応用物理学会春期発表会   29p-YA-10   .551   2001

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  • コンビナトリアル手法を用いたLead-TitaniumとLead Zirconium 金属有機溶液によるPZT薄膜の作製(1)

    何崗 飯島高志, 舟窪浩

    応用物理学会春期発表会   29p-YA-9   550   2001

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  • Heteroepitaxial Growth of (1,0,m+1) One-axis Oriented BLSF Thin Films Directly Crystallized by MOCVD

    Norimasa Nukaga, Takayuki Watanaba, Hiroshi Funakubo

    Mater.Res.Soc.Meeting   Nov.21(2001) Boston ( c2.2 )   45   2001

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  • Orientation Dependence of Electrical Properties of Low Temperature-grown Pb(Zr_0.35_Ti_0.65_)O_3_ Thin Films by MOCVD

    Keisuke Saito, Takahiro Oikawa Toshiyuki Kurosawa, Takao Akai, Hiroshi Funakubo

    FeRAM 2001   2001. Nov.19-21 ( Gotenba, Japan )   86 - 87   2001

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  • Effect of Strain in SrRuO_3_ Bottom Electrode on the Crystal Structure and the Electric Property of PZT Thin Film

    Kenji Takahashi, Takahiro Oikawa, Keisuke Saito Hironori Fujisawa, Masaru Shimizau, Hiroshi Funakubo

    FeRAM 2001   2001. Nov.19-21 ( Gotenba, Japan )   122 - 123   2001

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  • Large Remanet Polarization of (Bi,Nd)_4_Ti_3_O_12_ Epitaxial Thin Films Grownby Metal Organic Chemical Vapor Deposition

    Takashi Kojima, Takayuki Watanabe Tomohiro, Sakai Hiroshi Funakubo Keisuke Saito, Minoru Osada

    FeRAM 2001   2001. Nov.19-21 ( Gotenba, Japan )   93 - 94   2001

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  • Composition control of lead zirconate titanate thin films using mixed solutions of PbTiO3 and PbZrO3

    T Iijima, G He, H Funakubo

    INTEGRATED FERROELECTRICS   36 ( 1-4 )   255 - 263   2001

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  • Property improvement of SrBi2Ta2O9 thin films prepared at 600 degrees C by pulse-MOCVD

    H Funakubo, M Mitsuya, T Watanabe, N Nukaga

    INTEGRATED FERROELECTRICS   36 ( 1-4 )   103 - 110   2001

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  • Comparison of Epitaxial and Polycrystalline (001)- and (100)- oriented Tetragonal PZT Films Prepared by MOCVD

    Tomohiko Ozeki, Shintaro Yokoyama, Kenji Takahashi Takahiro Oikawa, Yasuko Ichikawa, Hiroshi Funakubo

    FeRAM 2001   2001. Nov.20 ( Gotenba, Japan )   93 - 94   2001

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  • Preparation and characterization of a-and b-axes oriented epitaxially grown Bi_4_Ti_3_O_12_-based Thin Films with Long-range lattice matching

    Takayuki Watanabe, Hiroshi Funakubo

    FeRAM 2001   2001. Nov.19-21 ( Gotenba, Japan )   164 - 165   2001

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  • Domain Switching in Pb(Zr_0.65_Ti_0.35_)O_3_ Thin Films

    Keisuke Saito, Takahiro Oikawa Toshiyuki Kurosawa, Takao Akai, Hiroshi Funakubo

    Tarns.Mater.Res.Soc.Jpn.   27 ( 1 )   215 - 218   2001

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  • Low-Pressure Deposition of Pb(Zr,Ti)O_3_ Films by MOCVD at Low temperature

    Gouji Asano, Takahiro Oikawa, Kouji Tokita, Kiyoshi Okada, Hiroshi Funakubo

    Trans Mater.Res.Soc.Jpn.   27 ( 1 )   223 - 226   2001

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  • Orientation Dependence of Ferroelerectricity of Epitaxially Grown Pb(Zr,Ti)O3 Thin Film Prepared by Metalorganic Chemical Vapor Deposition

    K.Nagashima, Masanori Aratani, Hiroshi Funakubo

    J.Appl.Phys   89 ( 8 )   4517 - 4522   2001

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  • Ferroelectric Property of Epitaxial Bi4Ti3O12 Films Prepared by Metalorganic Chemical Vapor Deposition

    Takayuki Watanabe, Hiroshi Funakubo, Keisuke Saito

    J.Mater.Res   16 ( 1 )   303 - 307   2001

  • 高品質SrBi2Ta2O9薄膜の低温合成と配向制御

    NorimasaNukaga MasatoshiMitsuya HiroshiFunakubo

    社団法人 電気通信学会 信学技報   SDM-237 ( (2001-3) )   7 - 12   2001

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    Language:Japanese   Publisher:東京 : 電子情報通信学会  

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  • Fabrication of Vanadium-Substituted (Bi,M)_4_Ti_3_O_12_[M=lanthanoide] Thin Films By Chemical Solution Deposition Methods Nov., p.50

    Hiroshi Uchida, Hiroki Yoshikawa, Kana, Okamura Isao, Okada Takayuki Hirofumi, Matsuda Takashi Iijima Watanaba, Hiroshi Funakubo

    Mater.Res.Soc.Meeting   21(2001) Boston, ( c4.15 )   50   2001

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  • Syntheisi and Ferroerectricirty of Sr- and Nd-Doped Bi_4_-xSrxTi_3_-xNbyO_12_ Thin Films by Sol-Gel Methods

    Hirofumi Matsuda, Takashi Iijima Hiroshi Uchida Isao, Okada Takayuki Watanaba, Hiroshi Funakubo

    Mater.Res.Soc.Meeting   Nov.21(2001) Boston ( c4.14 )   49   2001

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  • Catioic Modification of Bi_4_Ti_3_O_12_ Ferroerectrics and Property Desighn by Raman Spectroscopy

    Minoru Osada, Masato Kakihana, Takayuki Watanaba, Hiroshi Funakubo

    Mater.Res.Soc.Meeting   Nov.21(2001) Boston ( c4.10 )   49   2001

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  • Residual Strain Analysis of Epitaxial Grown SBT Films Prepared by MOCVD

    Keisuke Saito, Katsuyuki Ishikawa, Atsushi Saiki Isao, Yamaji Takao Akai, Hiroshi Funakubo

    Integ.Ferro   33   59 - 69   2001

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  • Composition Dependence of Phase and Epitaxial Property of Fe-Si Thin Film Prepared by MOCVD

    K.Akiyama, H. Funakubo

    ICCGG-13/ICVGE-11   G04-4   323   2001

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  • Application Study for the Vapor Phase Monitoring in MOCVD PZT Process by FTIR

    Tsukasa Satake, Hiroshi Funakubo

    The Second Asian Conference on Chemical Vapor Deposition Gyeongju   Asaian-CVD   120 - 121   2001

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  • Preparation and Characterization of 1-and c-axis oriented Epitaxially Grown Bi_4_Ti_3_O_12_ Based Thin Films With Long Range Lattice Matching

    Takayuki Watanaba, Hiroshi Funakubo

    Mater.Res.Soc.Meeting   Nov.22(2001) Boston ( c4.15 )   53   2001

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  • Domain Structures and Ferroelectric Propertuies of Epitaxial Pb(Zr,Ti)O3 Thin Films

    Keisuke Saito, Takahiro Oikawa, Isao, Yamaji Takao Akai, Hiroshi Funakubo

    ICCGG-13/ICVGE-11   03a-S11-06   440   2001

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  • Property of V- and W substituted Bi4Ti3O12 Thin Films by MOCVD and Their Electyrical Property

    Tomohiro Sakai, Takayuki Watanabe, Minoru, Osada Yuuji Noguchi, Masaru Miyayama, Hiroshi Funakubo

    ICCGG-13/ICVGE-11   03a-S11-14   444   2001

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  • Composition and Orienatation Dependence of Ferroelerectric Properties of Pb(ZrxTi1-x)O3 Thin Films Grwon by MOCVD

    Takahiro Oikawa, Masanori Aratani Keisuke Saito, Hiroshi Funakubo

    ICCG-13/ ICVGE-11   02a-S11-12   329   2001

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  • Property Desighn of the BiT-based Ferroelectric Thin Films by Site Engineering

    Takayuki Watanabe Tomohiro, Sakai Minoru, Osada Yuuji Noguchi, Masaru Miyayama, Hiroshi Funakubo

    ICCGG-13/ICVGE-11   03a-S11-14   445   2001

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  • Leakage Property Improvement of PLZT Capacitor Using CaRuO_3_ Top Electrode

    Hiroshi Funakubo, Norikazu Okuda Noriyuki Higashi

    Proc.Mater Res.Soc.   655   cc4.6   2001

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  • Preparation and Characterization of Epitaxial SrBi_2_Ta_2_O_9_ Thin Films

    Nisi Masayuki Fujimoto Masanori, Nukaga Isao, Yamaji Takao Akai, Hiroshi Funakubo

    Proc.Mater Res.Soc.   655   cc10.13   2001

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  • Characterization of Ferroelectric Property of c-axis and non-c-axis Oriented Epitaxially Grown Bismuth Layer-Structured Ferrolectric Thin Films with Different m-number Prepared by MOCVD

    Takayuki Watanabe Tomohiro, Sakai Atsushi, Saiki Keisuke, Saito Toyuhiko Chikyo, Hiroshi Funakubo

    Proc.Mater Res.Soc.   655   cc1.9.1- cc1.9.6.   2001

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  • Fabrication of Lead Ziroconium Titaniium Thin Films Usding a Different Process of Lead Zirconium and Lead Titanium Multi Layer Films

    Gang He, Takahashi Iijima, Hiroshi Funakubo

    ICCGG-13/ICVGE-11   02a-S11-16   331   2001

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  • Highly Conducting Indium-Tin-Oxide Transparent Films Favricated by Spray CVD Using Ethanol Solution of Indium(III) Chloride and Tin(II) Chloride

    Yutaka Sawada, Chikako Kobayashi, Shigeyuki Seki, Hiroshi Funakubo

    The Second Asian Conference on Chemical Vapor Deposition Gyeongju   Asaian-CVD   120 - 121   2001

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  • Low temperature Deposition of Epitaxial-Grade PZT Films by MOCVD

    Hiroshi Funakubo, Masnori Aratani Takahiro Oikawa, Keisuke Saito

    The 10 th US-Japan Seminor on Dielectrics and Piezoelectric Ceramics   Providence   131 - 134   2001

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  • Preparation of SrBi2(Ta0,7Nb0.3)2O9-Bi3TiTaO9 Solid Solution Films by MOCVD and Their Property

    Msasatoshi Mitsuya, Hiroshi Funakubo

    ICCGG-13/ICVGE-11   TG07 ( 02 )   .444.   2001

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  • Characteristics of Pb(Zr, Ti)O3 thin films prepared on various substrates by source gas pulse-introduced metalorganic chemical vapor deposition

    Masanori Aratani, Hiroshi Funakubo

    Ferroelectrics   260 ( 1 )   69 - 74   2001

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  • Characterization of low temperature Preparation of SrBi_2_Ta_2_O_9_ This Films by ECR Plasma Enhanced Metal Organic Chemical Vapor Deposition

    Norimasa Nukaga, Masanori Mitsuya Hioroshi Funakubo, Hideaki Matchida

    Ferroelectrics   260   51 - 60   2001

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  • Residual strain analysis of epitaxial grown SBT thin films prepared by MOCVD

    K Saito, K Ishikawa, A Saiki, Yamaji, I, T Akai, H Funakubo

    INTEGRATED FERROELECTRICS   33 ( 1-4 )   59 - 69   2001

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  • Effect of composition of MOCVD-SrRuO3 top electrode of (Pb, La)(Zr, Ti)O3 capacitor on H2 degradation

    Norikazu Okuda, Noriyuki Higashi, Takayuki Watanabe, Hiroshi Funakubo

    Ferroelectrics   260 ( 1 )   57 - 62   2001

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  • Composition Control of Lead Zirconium Titanium Thin Films Using Mixed Solution of PbTiO3 and PbZrO3

    T.Iijima G.He, H.Funakubo

    ISIF 2001   P2.2.14   254   2001

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  • New Combinatorial experimental methods for Preparaton of PZT Thin Film from Pb, Zr, Ti metal organic Chemical Sources

    Gang He, Takashi Iijima, Hiroshi Funakubo, Zheng Wang

    SPIE, San Jose   4281-04   34   2001

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  • Low Temperature Deposition of High Quolity SrBi2Ta2O9 Thin Films and its orientation Control

    Technical Report of Institute of Electronics, Information and Communication Engineering   SDM-237 ( (2001-3) )   7 - 12   2001

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  • Preparation of Pb(ZrxTi1-x)O3 Film by Source gas Pulse-induced MOCVD

    Masanori Aratani Kuniharu Nagashima Hiroshi Funakubo

    Japn.J.Appl.Phys   40 ( 6A )   4126 - 4130   2001

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  • Low temperature Direct Crystallization SrBi2(Ta,Nb)2O9 Thin Films by Thermal MOCVD and Their Properties

    Masatoshi Mitsuya Norimasa Nukaga, Hiroshi Funakubo

    Jpn.J.Appl.Phys   40 ( 5A )   3337 - 3342   2001

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  • Chemical Stability of SrBi2Ta2O9 Thin Film Prepared By Metalorganic Chemical Vapor Deposition

    Norimasa Nukaga, Masatoshi Mitasuya Hiroshi Funakubo Ferroelectrics

    IEICE Trans. Electron   E84-C ( 6 )   791 - 795   2001

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  • Metal Organic Chemical Vapor Deposition Growth of Epitaxial (Sr,Ca)RuO3 Thin Films with different Orientation as Bottom Electrode for Epitaxail Ferroelectric Thin Film

    Hiroshi Funakubo, Takahiro Oikawa Boriyuki Higashi, Keisuke Saito

    ICCGG-13/ICVGE-11   TG07 ( 01 )   328   2001

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  • New Control Method of Low Temaperature Deposition of Metal Oreganic Chemical Vapor Deposition. (2) ZrO2 Film Preparation

    Noriyuki Higashi, Yasushi Murakami, Hideaki Matchida, Hiroshi Funakubo

    The Second Asian Conference on Chemical Vapor Deposition   207-1209.   2001

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  • New Control Method of Low Temaperature Deposition of Metal Oreganic Chemical Vapor Deposition. (1) SrRuO3 Film Preparation

    Noriyuki Higashi, Yasushi Murakami, Hideaki Matchida, Hiroshi Funakubo

    The Second Asian Conference on Chemical Vapor Deposition   169 - 171   2001

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  • Preparation of Bi2WO6 Thin Films by MOCVD and its Electrical Character

    Katsuyuki Ishikawa, Takayuki Watanabe, Hiroshi Funakubo

    Thin Solid Films   392   128 - 133   2001

  • MOCVD Growth and Structure Analysis of High Conductive Epitaxial SrRuO3 Thin films With Different Orientation

    Takahiro Oikawa, Noriyuki Higashi Masahiro Aratani, Keisuke Saito, Hiroshi Funakubo

    Tras Matre Res Soc   26 ( 1 )   27 - 30   2001

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  • Combinatorial Approach for Ferroelerectric Thin Film Using Solution Based Process

    Hiroshi Funakubo, Takashi Iijima Gang He, Zheng Whang

    SPIE   4281-12   36   2001

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  • Low Leakage and High Ferroerectricity of Defect-free SBTN Based Ferroelectric Material

    Masanori Mitsuya Norimasa Nukaga Takayuki Watanabe, Hiroshi Funakubo

    Appl.Phys.Lett.,   79 ( 13 )   2067 - 2069   2001

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  • Influence of Deposition Temperature on the Microstructure of Pb-Ti-Nb-O Thin Films by Metallorganic Chemical Vapor Deposition

    Xue-Dong Liu, Hiroshi Funakubo Suguru Noda, Hiroshi Komiyama

    J.Electrocem.Soc.   148 ( 3 )   C227-230   2001

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  • MOCVD法によるBi層状強誘電体(m=2)薄膜の新組成探索

    三矢昌俊, 額賀紀全, 渡辺隆之, 舟窪浩

    応用物理学会春期発表会   31p-YA-7   559   2001

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  • パルスMOCVD法で合成した(Zr,Ti)O3薄膜の低温合成

    荒谷政則, 時田浩司, 及川貴弘, 尾関朝彦, 舟窪浩

    応用物理学会春期発表会   31a-YA-5   573   2001

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  • サイトエンジニアリングによるBIT基薄膜の特性設計

    渡辺隆之, 酒井朋簸裕, 野口裕ニ, 宮山勝, 水平学, 舟窪浩

    応用物理学会春期発表会   30p-YA-12   561   2001

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  • New Combinatorial experimental methods for Preparaton of PZT Thin Film from Pb, Zr, Ti metal organic Chemical Sources

    Gang He, Takashi Iijima, Hiroshi Funakubo, Zheng Wang

    SPIE, San Jose   4281-04   34   2001

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  • 厚膜PZT成膜用MOCVD法の開発

    尾関朝彦, 荒谷政則, 東典行, 舟窪浩, 佐仲正守

    日本セラミックス協会基礎討論会   34 - 35   2001

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  • 触媒ガスを用いたMOCVD原料ガスの分解温度制御法の開発

    東典行, 舟窪浩, 村上泰, 町田英明

    日本セラミックス協会基礎討論会   384 - 385   2001

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  • パルスMOCVD法によるPZT薄膜の特性改善

    荒谷政則, 尾関朝彦, 時田浩司, 舟窪浩

    日本セラミックス協会基礎討論会   32-33.   2001

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  • (103)単配向高純度SrBi2Ta2O9薄膜の低温合成と評価

    額賀記全, 三矢昌俊, 舟窪浩

    応用物理学会春期発表会   30p-YA-2   557   2001

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  • Domain Switching in Epitaxial Grown Pb(Zr,Ti)O3 Thin Films

    K.Saito, M.Aratani, I.Yamaji, T.Akai, H.Funakubo

    ISIF 2001   7.1.2C   315   2001

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  • Composition Control of Lead Zirconium Titanium Thin Films Using Mixed Solution of PbTiO3 and PbZrO3

    T.Iijima G.He, H.Funakubo

    ISIF 2001   P2.2.14   254   2001

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  • 高品質SrBi2Ta2O9薄膜の低温合成と配向制御

    額賀紀全, 三矢昌俊, 舟窪浩

    電気通信学会シリコン・デバイス研究会   2001

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  • Preparation of Pb(ZrxTi1-x)O3 Film by Source gas Pulse-induced MOCVD

    Masanori Aratani Kuniharu Nagashima Hiroshi Funakubo

    Japn.J.Appl.Phys   40 ( 6A )   4126 - 4130   2001

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  • Method of distinguishing SrBi2Ta2O9 phase from fluorite phase using X-ray diffraction reciprocal space mapping

    K Saito, M Mitsuya, N Nukaga, Yamaji, I, T Akai, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   39 ( 9B )   5489 - 5495   2000.9

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  • Comparison of deposition behavior of Pb(Zr,Ti)O3 films and its end-member-oxide films prepared by MOCVD

    Hiroshi Funakubo, Kuniharu Nagashima, Kazuo Shinozaki, Nobuyasu Mizutani

    Thin Solid Films   368 ( 2 )   261 - 265   2000.6

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    DOI: 10.1016/S0040-6090(00)00778-1

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  • Preparation and characterization of SrBi2(Ta1-xNbx)(2)O-9 thin films by metalorganic chemical vapor deposition from two organometallic source bottles

    M Mitsuya, K Ishikawa, N Nukaga, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   39 ( 6B )   L620 - L622   2000.6

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  • Simultaneous observation of ferroelectric domain patterns by scanning nonlinear dielectric microscope and surface morphology by atomic force microscope

    H Odagawa, Y Cho, H Funakubo, K Nagashima

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   39 ( 6B )   3808 - 3810   2000.6

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  • Preparation of Al-doped PbTiO3 thin films by metalorganic chemical vapor deposition and their characterization

    M Aratani, K Nagashima, T Iijima, M Mizuhira, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   39 ( 6A )   3591 - 3595   2000.6

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  • Preparation of Bismuth Layer-structured Ferroelectric Thin Films by MOCVD and their Characterization

    FUNAKUBO H.

    Adv. Mater. Opt. Electron.   10 ( 3-5 )   193 - 200   2000.5

  • Metalorganic chemical vapor deposition of conductive CaRuO3 thin films

    N Higashi, N Okuda, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   39 ( 5A )   2780 - 2783   2000.5

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  • Growth of epitaxial SrBi2Ta2O9 thin films by metalorganic chemical vapor deposition

    K Ishikawa, A Saiki, H Funakubo

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   39 ( 4B )   2102 - 2109   2000.4

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  • Growth of Epitaxially Grown Bismuth Layer-structured Ferroelectric Thin Films and Their Characterization

    Hiroshi Funakubo, Katsuyuki Ishikawa, Takayuki Watanabe, Masatoshi Mitsuya, Norimasa Nukaga

    Journal of the Japanese Association of Crystal Growth   Vol. 27 ( No. 3 )   111 - 116   2000

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    Language:Japanese   Publishing type:Article, review, commentary, editorial, etc. (scientific journal)   Publisher:The Japanese Association for Crystal Growth (JACG)  

    SrBi_2Ta_O_9 (SBT) thin films were epitaxially grown on SrTiO_3 single crystals by metal organic chemical vapor deposition (MOCVD) . c-axis-oriented SBT film was deposited on (100) SrTiO_3 substrate above 620℃. On the other hand, (1 16)-oriented SBT film was grown on (110) SrTi03 substrate at 820℃. The remanent polarization and the coercive field of (116)-oriented SBT film were 11.4μC/cm^2 and 80 kV/cm, respectively. On the other hand, the (001) -oriented SBT film showed no ferroelectricity. These ferroelectric annisotropy of SBT agreed with the estimation from the crystal anysotropy of SBT.

    DOI: 10.19009/jjacg.27.3_111

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  • Characterization of Ferroelectric Property of c-axis and non-c-axis Oriented Epitaxial Grown BLSF Thin Films

    Tomohiro Sakai, Takayuki Watanabe, Hiroshi Funakubo

    12th Mater. Rer. Soc. Jpn   KSP ( E1-008 )   2000

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  • Characteristic of Pb(Zr,Ti)O3 Thin Films Prepared by Source Gas Pulse-Introduced MOCVD

    M Aratani, K.Nagashima, H.Funakubo

    AMF2   2000

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  • MOCVD Growth and Structural Analysis of High Conductive Epitaxial SrRuO3 Thin Films with Different orientations

    T.Oikawa, N.Higashi, M.Aratani, K.Saito, H.Funakubo

    12th Mater. Rer. Soc. Jpn.   KSP ( E1-001. )   2000

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  • Distinction Method between Ferroelectric SrBi2Ta2O9 Phase and Paraelectlic Fluorite and Pyrochlore Impurity Phase

    K.Saito, I.Yamaji, T.Akai, P.Munk, M.Mitsuya, N.Nukaga, H.Funakubo

    M.R.S.   2000

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  • Characterization of Ferroelectric Property of Epitaxially Grown Bismuth Layer-Structured Ferroelectric Thin Films with Different m-numbers Prepared by MOCVD

    T.Watanabe, T.Sakai, H.Funakubo

    Proc. Mater.Res.Soc   cc1.9   538   2000

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  • A New Combinatorial Process to Fabricate PZT Thin Film from Chemical Sauces

    G.He T.Iijima, H.Funakubo, Z.Wang, N.Sanada

    12th IEEE International Symposium on the Applications of Ferroelectrics   July 31_August 2   Hawaii   2000

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  • Thermal Stability of Pb(DPM)2 Used for the Lead Source of MOCVD of Lead-based Ferroelectric Thin Film

    Kuniharu Nagashima, Hiroshi Funakubo

    Chemical Vapor Deposition   6 ( (6) )   311 - 313   2000

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  • Dependence of Crystallgraphic prientation for Rhombohedral PZT Thin Films on Their Electrical Properties

    K.Tokita, M.Aratani, H.Funakubo

    Asian Meeting of Ferroelectrics   D3p ( 06 )   366   2000

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  • Ferroelectric Property of Epitaxial Bi4Ti3O12 Films Prepared by MOCVD

    T.Watanabe, A.saiki, K.Saito, H.Funakubo

    AFM2   2000

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  • Low Temperature Preparation of SrBi2Ta2O9 Thin Films by ECR Plasma Enhanced Metal Organic Chemical vapor Deposition

    N.Nukaga, M.Mitsuya, H.Funakubo

    AFM2   2000

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  • The Stability of Bi element in SrBi2Ta2O9 Thin Film and The Property of The film prepared by MOCVD

    N.Nukaga, H.Funakubo, E.Shigeno, Y.Sawada

    AMF2   2000

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  • Composition Control of YSZ Thin Film Prepared by MOCVD

    Tomokazu Matsuzaki, Hiroshi Funakubo, Norikazu, Okuda KazuoShinozaki Nobuyasu Mizutani

    J.Ceram.Soc.Korea   6 ( 2 )   134 - 137   2000

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  • Comparison of Deposition Behavior of Pb(Zr,Ti)O3 Films and Its End-Member-Oxide Films

    Hiroshi Funakubo, Kuniharu, Nagashima Kazuo, Shinozaki Nobuyasu Mizutani

    Thin Solid Films   368   261 - 265   2000

  • Crystal structure and electrical properties of epitaxial SrBi2Ta2O9 films

    Katsuyuki Ishikawa, Hiroshi Funakubo, Keisuke Saito, Toshimasa Suzuki, Yuji Nishi, Masayuki Fujimoto

    Journal of Applied Physics   87 ( 11 )   8018 - 8023   2000

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    Language:English   Publisher:American Institute of Physics Inc.  

    DOI: 10.1063/1.373490

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  • 51MOCVD Preparation of SBTN Thin Films From Two Organometallic Source Bottles

    H.Funakubo, Masatoshi Mitsuya Norimasa Nukaga, Katsuyuki Ishikawa

    12 th International Symposium on Integrated Ferroelectrics   March 12, 2000,Aahe ( P.262. )   311   2000

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  • Growth of -FeSi2 Thin Film on Si(111) by Metal Organic Chemical Vapor Deposition

    Kensuke Akiyama Seishiro Oya, Hiromichi Takano, Nobuo, Kieda, Hiroshi Funakubo

    Jpn.J.Appl.Phys   40   L460-L462   2000

  • Leakage Property Improvement of PLZT Capacitor Using CaRuO3 Top Electrode

    H.Funakubo, N.Okuda, N.Higashi

    MRS Fall Meeting   cc4 ( 6 )   .543   2000

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  • Interface Structure of Epitaxial SrBi2Ta2O9 Thin Film

    SUZUKI T., NISHI Y., FUJIMOTO M., ISHIKAWA K., FUNAKUBO H.

    35   433   2000

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  • Low-Temperature Deposition of SrRuO3 Thin Film Prepared by Metalorganic Chemical Vapor Deposition.

    Okuda Norikazu, Saito Keisuke, Funakubo Hiroshi

    Japanese Journal of Applied Physics   39 ( 2A )   572 - 576   2000

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    Language:English   Publisher:The Japan Society of Applied Physics  

    SrRuO<FONT SIZE="-1">3</FONT> thin films were prepared on (100) LaAlO<FONT SIZE="-1">3</FONT> substrates by metalorganic chemical vapor deposition (MOCVD) at various deposition temperatures from 550°C to 750°C. The composition of the film can be controlled by monitoring the composition of the input source gas. Below 600°C, the degree of a-axis orientation of the film gradually decreased with decreasing deposition temperature. However, the resistivity of the film was almost the same for that reported for the single crystal and was independent of the deposition temperature when the Ru/(Ru+Sr) ratio of the film was 0.5. The film had almost the same value for the film thickness from 30 to 250 nm deposited at 750°C. Moreover, it increased with the Ru/(Ru+Sr) ratio below 0.45.

    DOI: 10.1143/JJAP.39.572

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  • Composition Control of Pb(Zr,Ti)O3 Thin Films by MOCVD

    Kuniharu Nagashima, Hiroshi Funakubo

    Jpn.J.Appl.Phys.   39 ( 1 )   212 - 216   2000

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  • Surface Protrusions on Pb-Ti-Nb-O Thin Film

    2000

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  • Preparation of Bi2VO5.5 Thin Films by MOCVD and Their Electrical Propertries

    Hiroshi Funakubo, Tomohiro, Sakai Takayuki Watanabe, Katsuyuki Ishikawa

    1th Asian Meeting of Electroceram   第20回電子材料討論会   52   2000

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  • Property Improvement of PZT film prepared by Source gas Pulse-introduced metalorganoc Chemical Vapor Deposition

    Kuniharu Nagashima, Masanori Aratani, Hiroshi Funakubo

    Jpn.J.Appl.Phys.   39   L996-L998   2000

  • Orientation Control of MOCVD-Bi4Ti3O12 Thin Film by Sequence Source Gas Supply Method

    Takayuki Watanabe, Hiroshi Funakubo, J.Mater.Res

    J.Mater. Res.   39   5211 - 5216   2000

  • Direct Preparation of SrBi2(Ta,Nb)O9 Thin Film prepared by metal organic chemical vapor deposition at low temeperture

    Masatohi Mitsuya Norimasa Nukaga, Katuyuki Ishkawa, Hiroshi Funakubo

    Jpn.J.Appl.Phys.   39 ( 8A )   L822-L824 - L824   2000

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    Language:English   Publisher:The Japan Society of Applied Physics  

    Polycrystalline SrBi2(Ta1-xNbx)2O9 (SBTN) thin films with large ferroelectricity were directly prepared on Pt/Ti/SiO2/Si substrates even at 585°C by thermal metalorganic chemical vapor deposition (MOCVD). Thin films mainly consisting of the SBTN phase were obtained even at 585°C. The (103)-oriented film changed to a (001)-oriented one when the deposition temperature increased. The 200-nm-thick film deposited at 585°C had large ferroelectricity, i.e., two times the remanent polarization (2Pr) and two times the coercive field (2Ec) of 12.2 $\mu$C/cm2 and 160 kV/cm, respectively. When the deposition temperature was increased to 670°C, the 2Pr and 2Ec values increased to 23.8 $\mu$C/cm2 and 190 kV/cm, respectively.

    DOI: 10.1143/jjap.39.L822

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  • Composition Control of YSZ Thin Film Prepared by MOCVD

    Tomokazu Matsuzaki, Hiroshi Funakubo, Norikazu, Okuda KazuoShinozaki Nobuyasu Mizutani

    J.Ceram.Soc.Korea   6 ( 2 )   134 - 137   2000

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  • Simultanious Pbservation of Ferroelectric Domain Patterns by Scanning Nonlinear dielectric Microscope and Surface Morphorogy by Atomic Force Microscopy,

    Hiroshi Odagawa, Yasuo Cho, Hiroshi Funakubo, Kuniharu Nagashima

    Jpn.J.Appl.Phys   39 ( 6B )   3808 - 3810   2000

  • Low Temperture Deposition of SrRuO3 Thin Film Prepared by MOCVD

    Norikazu Okuda, Hiroshi Funakubo

    Jpn.J.App.Phys.   39 ( 2A )   572 - 576   2000

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    Language:English   Publisher:The Japan Society of Applied Physics  

    SrRuO<FONT SIZE="-1">3</FONT> thin films were prepared on (100) LaAlO<FONT SIZE="-1">3</FONT> substrates by metalorganic chemical vapor deposition (MOCVD) at various deposition temperatures from 550°C to 750°C. The composition of the film can be controlled by monitoring the composition of the input source gas. Below 600°C, the degree of a-axis orientation of the film gradually decreased with decreasing deposition temperature. However, the resistivity of the film was almost the same for that reported for the single crystal and was independent of the deposition temperature when the Ru/(Ru+Sr) ratio of the film was 0.5. The film had almost the same value for the film thickness from 30 to 250 nm deposited at 750°C. Moreover, it increased with the Ru/(Ru+Sr) ratio below 0.45.

    DOI: 10.1143/JJAP.39.572

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  • Composition Control of Pb(Zr,Ti)O3 Thin Films by MOCVD

    Kuniharu Nagashima, Hiroshi Funakubo

    Jpn.J.Appl.Phys.   39 ( 1 )   212 - 216   2000

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  • Synthesis of a New Liquid Double Alkoxide Sr[TaOC2H5)5(OC2H4OCH3)]2 and the Oxide Film by CVD

    Hidekimi Kadokura, Yumie Okuhara, Masatoshi Mitsuya, Hiroshi Funakubo

    Chemical Vapor Deposition   6,5   225 - 227   2000

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  • Crystal Structure Comparison between Cnductive SrRuO3 and CaRuO3 Thin Films

    N.Higashi T.Watanabe, K.Saito, T.Akai, I.Yamaji, H.funakubo

    The 1st Asian Conferencw on Crystal Growth and Crystal Technology   CaRuO3 Thin T-P-90   506   2000

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  • FeSi2 Thin Film Preparation by ECR plasma-enhanced MOCVD

    K.Akiyama, S.Oya, H.Funakubo

    Proc.Japan-UK Joint Worjshop on Kankyo-Semiconductor   Vol. 28 ( No. 3 )   48 - 50   2000

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  • Orientation Dependence of Ferroelectric Properties of Epitaxially Grown Pb(Zr,Ti)O3 Films

    H.Funakubo, K.Nagashima M.Aratani

    12th International Symposium on the Applications of Ferroelectrics   July 31_August   189   2000

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  • Ferroelectric Property Improvement of pb(Zr,Ti)O3 Films Prepared by Source Gas Pulsed-Introduced MOCVD

    H.Funakubo, K.Nagashima

    12th International Symposium on the Applications of Ferroelectrics   MOCVDJuly 31_August   19   2000

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  • MOCVD Preparation of SBTN Thin Films From Two Organometallic Source Bottles

    H.Funakubo, Masatoshi Mitsuya Norimasa Nukaga, Katsuyuki Ishikawa

    12 th International Symposium on Integrated Ferroelectrics   March 12, 2000   311   2000

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  • Low temperture Preoaration of SrBi2Ta2O9 Thin Film by Electrin Resonance Plasma Enhanced Metal Organic Chemical Vapor Deposition and Their Electrical Properties

    Norimasa Nukaga, Masatoshi Mitsuya, Hiroshi Funakubo

    Jpn.J.Appl.Phys.   39 ( 9 )   5496 - 5500   2000

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    Language:English   Publisher:The Japan Society of Applied Physics  

    A SrBi<FONT SIZE="-1">2</FONT>Ta<FONT SIZE="-1">2</FONT>O<FONT SIZE="-1">9</FONT> (SBT) thin film was prepared by electron cyclotron resonance plasma-enhanced metalorganic chemical vapor deposition (ECR-MOCVD). The deposition temperature dependence of the composition of the film was lesser than that of films prepared by conventional thermal MOCVD. An almost single phase of SBT was obtained at 610°C. The crystallinity of this film was higher than that of the film prepared by thermal MOCVD at 500°C and subsequent heat treatment at 800°C. The leakage current density of this film was small, on the order of 10<FONT SIZE="-1">-8</FONT> A/cm<FONT SIZE="-1">2</FONT> up to 240 kV/cm. Moreover, two fold the remanent polarization and the coercive field at an applied electric field of 400 kV/cm were 14.5 μC/cm<FONT SIZE="-1">2</FONT> and 77 kV/cm, respectively. These values were larger than those of the film prepared by thermal MOCVD at 500°C with heat treatment at 800°C.

    DOI: 10.1143/JJAP.39.5496

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  • Characterization of Residual Strain in Epitaxial Pb(ZrxTi1-x)O3 Thin Film Orepared by Pulsed-Introduced MOCVD

    K.Saito, I.Yamaji, TAkai K.Ishikawa, K.nagashima, H.Funakubo

    12th IEEE International Symposium on the Applications of Ferroelectrics   ( P254 )   184   2000

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  • Characterization of Residual Stress Free (001)- and (116)- oriented SrBi2Ta2O9 Thin Films Epitaxially grown on (001) and (110) SrTiO3 Sungle Crystal

    K.Saitou, T.Akai, T.Suzuki, Y.Nishi, K.Ishikawa, H.Funakubo

    Iint.Symp.Integ.Ferro   ( Aahen, Germany, Marc )   71   2000

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  • Orientation Control of Pb(Zr,Ti)O3 Thin Films

    H.Funakubo, M.Aratani K.Tokita

    The First International Symposium on Nanoarchitectonics Using Suprainteractions   November 13-15   13p29,138   2000

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  • Preparation of Bi2VO5.5 Thin Films by MOCVD and Their Electrical Properties

    H.Funakubo, T.Sakai, T.Watanabe, K Ishikawa

    13th Fall Meeting of The Ceramic Society of Japan   2PA ( 06 )   52   2000

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  • コンビナトリアルケミストリーの手法を用いた溶液法によるPZT薄膜の作成方法の検討

    何荷 飯島高志, 舟窪浩, 王征 真田徳雄

    応用物理学会   29a-P7-2   514   2000

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  • Synthesis of a New Liquid Double Alkoxide Sr[TaOC2H5)5(OC2H4OCH3)]2 and the Oxide Film by CVD

    Hidekimi Kadokura, Yumie Okuhara, Masatoshi Mitsuya, Hiroshi Funakubo

    Chemical Vapor Deposition   6,5   225 - 227   2000

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  • 低温合成MOCVD-SrBi2Ta2O9薄膜の特性改善

    三矢昌俊, 額賀紀全, 渡辺隆之, 舟窪浩

    応用物理学会   7p-G-7   459   2000

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  • ラマン分光法によるビスマス層状構造強誘電体の評価

    長田実, 三矢昌俊, 渡辺隆之, 舟窪浩, 垣花眞人

    応用物理学会   6p-G-11   451   2000

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  • ECR-MOCVD法による低温合成SrBi2Ta2O9薄膜の高品質化

    額賀紀全, 三矢昌俊, 町田英明, 舟窪浩

    応用物理学会   6p-G-8   459   2000

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  • MOCVD Preparation of SBTN Thin Films From Two Organometallic Source Bottles

    Hiroshi Funakubo, Masatoshi Mitsuya Norimasa Nukaga, Katsuyuki Ishikawa

    Integ.Ferro   30   225 - 234   2000

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  • Thermal Stability of Pb(DPM)2 Used for the Lead Source of MOCVD of Lead-based Ferroelectric Thin Film

    Kuniharu Nagashima, Hiroshi Funakubo

    Chemical Vapor Deposition   6 ( (6) )   311 - 313   2000

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  • La置換Bi4Ti3O12薄膜のMOCVD合成と電気特性

    渡辺隆之, 水平学, 斉藤啓介, 舟窪浩

    応用物理学会   6p-G-4   449   2000

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  • パルスMOCVD法で合成したPBZrTiO3薄膜の表面平滑性

    荒谷政則, 尾関朝彦, 舟窪浩

    応用物理学会   5p-G-12   442   2000

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  • Pb(ZrxTi1-x)O3エピタキシャル薄膜における結晶ドメイン構造

    斉藤啓介, 長島邦治, 山路功, 赤井孝夫, 舟窪浩

    応用物理学会   5p-G-10   441   2000

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  • PZT薄膜用MOCVD原料のFTIRによる気相計測

    佐竹司 舟窪浩

    応用物理学会   5p-G-9   441   2000

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  • SrBi2(Ta1-xNBx)2O9薄膜におけるフローライト構造の判別法と評価

    斉藤啓介, 三宅まり子, 山路功, 赤井孝夫, 三矢昌俊, 石川勝之, 額賀紀全, 舟窪浩

    第17回強誘電体応用会議   25-T-15   2000

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  • CaRuO3及びSrRuO3薄膜の上部電極特性比較

    奥田律一, 東典行, 舟窪浩

    応用物理学会   31a-P18-2   536   2000

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  • 溶液気化MOCVD法により作成したSrBi2Ta2O9薄膜の評価と膜質改善

    神保武人, 藤井俊成, 磯部武揚, 舟窪浩, 徳光永輔, 石原宏

    応用物理学会   30a-P11-31   535   2000

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  • FeSi2 Thin Film Preparation by ECR plasma-enhanced MOCVD

    K.Akiyama, S.Oya, H.Funakubo

    Proc.Japan-UK Joint Worjshop on Kankyo-Semiconductor   48 - 50   2000

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  • Characterization of Residual Strain in Epitaxial Pb(ZrxTi1-x)O3 Thin Film Orepared by Pulsed-Introduced MOCVD

    K.Saito, I.Yamaji, TAkai K.Ishikawa, K.nagashima, H.Funakubo

    12th IEEE International Symposium on the Applications of Ferroelectrics   ( P254 )   184   2000

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  • ECRプラズマMOCVD法によるβ-FeSi2薄膜の作成

    秋山賢輔, 大屋誠志郎, 舟窪浩

    応用物理学会   30a-YC-3   908   2000

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  • エピタキシャル成長Pb(Zr,Ti)O3薄膜における強誘電特性の結晶方位依存性

    長島邦治, 東典行, 舟窪浩

    応用物理学会   31a-P18-3   536   2000

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  • エピタキシャル成長Bi4Ti3O12薄膜のMOCVD合成と電気特性評価(1)、c軸配向

    渡部隆之, 佐伯淳, 斉藤啓介, 舟窪浩

    応用物理学会   30a-P11-25   533   2000

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  • c軸配向エピタキシャルBi2WO6薄膜のMOCVD合成とその評価

    石川勝之, 佐伯淳, 斉藤啓介, 水平学, 舟窪浩

    応用物理学会   30a-P11-24   .532   2000

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  • エピタキシャル成長Bi4Ti3O12薄膜のMOCVD合成と電気特性評価(1)、c軸配向

    渡部隆之, 佐伯淳, 斉藤啓介, 舟窪浩

    応用物理学会   30a-P11-23   .532   2000

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  • c軸配向エピタキシャルBi2VO5.5薄膜のMOCVD合成とその評価

    石川勝之, 佐伯淳, 斉藤啓介, 水平学, 舟窪浩

    応用物理学会   30a-P11-22   532   2000

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  • MOCVD-SRBi2Ta2O9薄膜のBiの安定性とその特性

    額賀紀全, 石川勝之, 佐伯淳, 斉藤啓介, 舟窪浩

    応用物理学会   30a-P11-25   532   2000

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  • MOCVD合成エピタキシャルSrRuO3薄膜の構造解析

    及川貴弘, 東典行, 荒谷政則, 佐伯淳, 斉藤啓介, 舟窪浩

    応用物理学会   5p-G-7   440   2000

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  • MOCVD-SrRuO3 薄膜の析出過程の新制御法

    東典行, 村上泰, 町田英明, 舟窪浩

    応用物理学会   5p-G-6   440   2000

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  • SrRuO3 非c軸成長B2VO5.5薄膜のMOCVD合成とその評価

    酒井朋裕, 渡辺隆之, 舟窪浩

    応用物理学会   5a-G-11   438   2000

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  • Crystal Structure Comparison between Cnductive SrRuO3 and CaRuO3 Thin Films

    N.Higashi T.Watanabe, K.Saito, T.Akai, I.Yamaji, H.funakubo

    The 1st Asian Conferencw on Crystal Growth and Crystal Technology   CaRuO3 Thin T-P-90   506   2000

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  • エピタキシャル成長SrBi2Ta2O9薄膜のMOCVD合成とその電気特性

    舟窪浩, 石川勝之, 額賀紀全, 斉藤啓介, 佐伯淳, 鈴木俊昌, 西湯二

    日本セラミックス協会基礎討論会   2D-11   354 - 355   2000

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  • Orientation Control of Pb(Zr,Ti)O3 Thin Films

    H.Funakubo, M.Aratani K.Tokita

    The First International Symposium on Nanoarchitectonics Using Suprainteractions   November 13-15   13p29,138   2000

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  • Preparation of Bi2VO5.5 Thin Films by MOCVD and Their Electrical Properties

    H.Funakubo, T.Sakai, T.Watanabe, K Ishikawa

    13th Fall Meeting of The Ceramic Society of Japan   2PA ( 06 )   52   2000

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  • Orientation Dependence of Ferroelectric Properties of Epitaxially Grown Pb(Zr,Ti)O3 Films

    H.Funakubo, K.Nagashima M.Aratani

    12th International Symposium on the Applications of Ferroelectrics   July 31_August   189   2000

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  • Property Improvement of PZT film prepared by Source gas Pulse-introduced metalorganoc Chemical Vapor Deposition

    Kuniharu Nagashima, Masanori Aratani, Hiroshi Funakubo

    Jpn.J.Appl.Phys.   39   L996-L998   2000

  • Orientation Control of MOCVD-Bi4Ti3O12 Thin Film by Sequence Source Gas Supply Method

    Takayuki Watanabe, Hiroshi Funakubo, J.Mater.Res

    J.Mater. Res.   39   5211 - 5216   2000

  • Electrical properties of SrBi2Ta2O9 (SBT) thin film prepared by metalorganic chemical vapor deposition

    N Nukaga, H Funakubo, K Ishikawa, E Shigeno, Y Sawada

    ELECTROCERAMICS IN JAPAN III   181-1   93 - 97   2000

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  • Direct Preparation of Crystalline SrBi2(Ta1-xNbx)2O9 Thin Films by Thermal Metalorganic Chemical Vapor Deposition at Low Temperature

    Mitsuya Masatoshi, Nukaga Norimasa, Funakubo Hiroshi

    Jpn J Appl Phys   39 ( 8A )   L822-L824 - L824   2000

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    Polycrystalline SrBi2(Ta1-xNbx)2O9 (SBTN) thin films with large ferroelectricity were directly prepared on Pt/Ti/SiO2/Si substrates even at 585°C by thermal metalorganic chemical vapor deposition (MOCVD). Thin films mainly consisting of the SBTN phase were obtained even at 585°C. The (103)-oriented film changed to a (001)-oriented one when the deposition temperature increased. The 200-nm-thick film deposited at 585°C had large ferroelectricity, i.e., two times the remanent polarization (2Pr) and two times the coercive field (2Ec) of 12.2 $\mu$C/cm2 and 160 kV/cm, respectively. When the deposition temperature was increased to 670°C, the 2Pr and 2Ec values increased to 23.8 $\mu$C/cm2 and 190 kV/cm, respectively.

    DOI: 10.1143/jjap.39.L822

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    Other Link: https://jlc.jst.go.jp/DN/JALC/00068728212?from=CiNii

  • Ferroelectric Property Improvement of pb(Zr,Ti)O3 Films Prepared by Source Gas Pulsed-Introduced MOCVD

    H.Funakubo, K.Nagashima

    12th International Symposium on the Applications of Ferroelectrics   MOCVDJuly 31_August   19   2000

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  • MOCVD preparation of SBTN thin films from two organometallic source bottles

    H Funakubo, M Mitsuya, N Nukaga, K Ishikawa

    INTEGRATED FERROELECTRICS   30 ( 1-4 )   225 - 234   2000

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  • Low-Temperature Preparation of SrBi2Ta2O9 Thin Films by Electron Cyclotron Resonance Plasma-Enhanced Metalorganic Chemical Vapor Deposition and Their Electrical Properties.

    Nukaga Norimasa, Mitsuya Masatoshi, Funakubo Hiroshi

    Japanese Journal of Applied Physics   39 ( 9 )   5496 - 5500   2000

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    A SrBi<FONT SIZE="-1">2</FONT>Ta<FONT SIZE="-1">2</FONT>O<FONT SIZE="-1">9</FONT> (SBT) thin film was prepared by electron cyclotron resonance plasma-enhanced metalorganic chemical vapor deposition (ECR-MOCVD). The deposition temperature dependence of the composition of the film was lesser than that of films prepared by conventional thermal MOCVD. An almost single phase of SBT was obtained at 610°C. The crystallinity of this film was higher than that of the film prepared by thermal MOCVD at 500°C and subsequent heat treatment at 800°C. The leakage current density of this film was small, on the order of 10<FONT SIZE="-1">-8</FONT> A/cm<FONT SIZE="-1">2</FONT> up to 240 kV/cm. Moreover, two fold the remanent polarization and the coercive field at an applied electric field of 400 kV/cm were 14.5 μC/cm<FONT SIZE="-1">2</FONT> and 77 kV/cm, respectively. These values were larger than those of the film prepared by thermal MOCVD at 500°C with heat treatment at 800°C.

    DOI: 10.1143/JJAP.39.5496

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  • SrBi2Ta2O9薄膜におけるSrBi2Ta2O9相とフローライト相の判別法

    斉藤啓介, 石川勝之, 額賀紀全, 山路功, 赤井孝夫, 舟窪浩

    応用物理学会   30a-P11-13   529   2000

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  • MOCVD法によるSrBi2Ta2O9薄膜の合成

    額賀紀全, 三矢昌俊, 舟窪浩

    応用物理学会   30a-P11-20   531   2000

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  • SrBi2(Ta1-xNbx)2O9薄膜の直接合成による低温下

    三矢昌俊, 石川勝之, 額賀紀全, 渡部隆之, 舟窪浩

    応用物理学会   30a-P11-19   531   2000

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  • 導電性CaRuO3, SrRuO3薄膜の結晶構造比較

    東典行, 奥田律一, 斉藤啓介, 水平學, 舟窪浩

    応用物理学会   30a-P11-17   530   2000

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  • SrBi2(Ta1-xNbx)O9(SBTN)薄膜の波長分散型蛍光X線分析装置による組成分析

    水平學, 三矢昌俊, 山路功, 赤井孝夫, 舟窪浩

    応用物理学会   30a-P11-14   529   2000

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  • パルスMOCVD法によるPb(Zr,Ti)O3薄膜の特性評価

    荒谷則則, 長島邦治, 東典行 舟窪浩

    応用物理学会   29a-P7-1   514   2000

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  • Characterization of Residual Stress Free (001)- and (116)- oriented SrBi2Ta2O9 Thin Films Epitaxially grown on (001) and (110) SrTiO3 Sungle Crystal

    K.Saitou, T.Akai, T.Suzuki, Y.Nishi, K.Ishikawa, H.Funakubo

    Iint.Symp.Integ.Ferro   ( Aahen, Germany, Marc )   71   2000

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  • MOCVD合成されたSrBi2Ta2O9エピタキシャル薄膜の結晶構造評価

    斉藤啓介, 赤井孝夫, 石川勝之, 舟窪浩

    日本セラミックス協会基礎討論会   2D-11   354 - 355   2000

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  • 種々の配向をもつエピタキシャル成長Pb(Zr,Ti)O3薄膜の特性評価

    長島邦治, 奥田律一, 舟窪浩, 斉藤啓介

    日本セラミックス協会基礎討論会   2D-10   352 - 353   2000

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  • Sr、Ta新原料を用いた溶液気化MOCVD法によるSBT薄膜の作成

    藤井俊成, 神保武人, 舟窪浩, 徳光永輔, 石原宏

    応用物理学会   30a-P11-10   528   2000

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  • 工業用Al-Si 基合金の流動性と流動停止機構

    舟窪 辰也, 安斎 浩一, 久保 紘

    鋳造工学 全国講演大会講演概要集   136   26 - 26   2000

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    Language:Japanese   Publisher:公益社団法人 日本鋳造工学会  

    DOI: 10.11279/jfeskouen.136_15

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Presentations

  • ウルツ鉱構造(Mg,Si)N-AlN固溶体薄膜の作製と評価”、第72回応用物理学会春季学術講演会

    影山壮太郎, 岡本一輝, 平永良臣, 舟窪浩

    第72回応用物理学会春季学術講演会  2025.3 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:千葉県 野田市  

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  • Switching kinetics in wurtzite Zn(Ce,Mn)O ferroelectric films

    Nana SUN, Atsuhiro Tamai, Kazuki Okamoto, Hideaki Adachi, Isaku Kanno, HIROSHI FUNAKUBO

    第72回応用物理学会春季学術講演会  2025.3 

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    Event date: 2025.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:千葉県 野田市  

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  • Characterization of Ferroelectricity in M-polar ScAlN and N-polar ScGeAlN Thin Films

    Sri Ayu Anggraini, M. Uehara, K. Okamoto, 中村美子, Kenji Hirata, Tomoaki Yamada, Kensuke Akiyama, H. Funakubo

    第72回応用物理学会春季学術講演会  2025.3 

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    Event date: 2025.3

    Language:English   Presentation type:Poster presentation  

    Venue:千葉県 野田市  

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  • 希土類元素ドープエピタキシャルHfO2薄膜の結晶構造と強誘電特性評価

    土屋裕太郎, 下野園航平, 岡本一輝, 井上ゆか梨, 舟窪浩

    第72回応用物理学会春季学術講演会  2025.3 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:千葉県 野田市  

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  • AlScN薄膜のITO透明電極上へのエピタキシャル成長と極性のSc量依存性

    劉センコン, 安部琴子, Yuan Xueyou, 岡本一輝, 舟窪浩, 山田智明

    第72回応用物理学会春季学術講演会  2025.3 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:千葉県 野田市  

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  • 大気圧40 ºC合成した自己分極(001)配向正方晶強誘電体エピタキシャル薄膜の作製とその特性評価

    古賀彩月, 胡雨弦, 白石貴久, 岡本一輝, 舟窪浩

    第72回応用物理学会春季学術講演会、  2025.3 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:千葉県 野田市  

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  • 薄膜化した (Al1-xScx)N膜における結晶性・強誘電特性のSc組成比依存性

    道古宗俊, 松井尚子, 入澤寿和, 恒川孝二, Nana Sun, 中村美子, 岡本一輝, 舟窪浩

    第72回応用物理学会春季学術講演会  2025.3 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:千葉県 野田市  

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  • ウルツ鉱構造異原子価3元系窒化物MgSiN2薄膜の作製と評価

    影山壮太郎, 岡本一輝, 平永良臣, 上岡義弘, 召田雅実, 舟窪浩

    第72回応用物理学会春季学術講演会  2025.3 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Poster presentation  

    Venue:千葉県 野田市  

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  • Effects of thickness scaling on switching kinetics in (Al,Sc)N ferroelectric films

    Nana Sun, Kazuki Okamoto, Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Hiroshi Funakubo

    第72回応用物理学会春季学術講演会  2025.3 

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    Event date: 2025.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:千葉県 野田市  

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  • (Al,Sc)N強誘電体薄膜におけるスイッチング特性の結晶構造依存性

    河野駿平, 岡本一輝, 影山壮太郎, 孫納納, 安岡慎之介, 舟窪浩

    第72回応用物理学会春季学術講演会  2025.3 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:千葉県 野田市  

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  • 大気圧100℃以下低温合成した自己分極(001)配向正方晶強誘電体エピタキシャル薄膜の作製と評価

    古賀彩月, 胡雨弦, 白石貴久, 岡本一輝, 舟窪浩

    第63回セラミックス基礎科学討論会  2025.1 

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    Event date: 2025.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟県 新潟市  

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  • 異原子価3元系窒化物MgSiN2薄膜の2段階成膜による結晶化温度の低減

    影山壮太郎, 岡本一輝, 平永良臣, 舟窪浩

    第63回セラミックス基礎科学討論会  2025.1 

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    Event date: 2025.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟県 新潟市  

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  • TaとCeをco-dopeしたHfO2薄膜の作製と強誘電性評価

    下野園航平, 岡本一輝, 山岡和希子, 川島康, 井上ゆか梨, 舟窪浩

    第63回セラミックス基礎科学討論会  2025.1 

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    Event date: 2025.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟県 新潟市  

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  • (Al,Sc)N強誘電体薄膜の結晶構造及び電気特性に及ぼす成膜条件の影響

    河野駿平, 岡本一輝, 影山壮太郎, 孫納納, 舟窪浩

    第63回セラミックス基礎科学討論会  2025.1 

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    Event date: 2025.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟県 新潟市  

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  • {111}配向した希土類元素ドープエピタキシャルHfO2薄膜の結晶構造と強誘電特性評価

    土屋裕太郎, 下野園航平, 岡本一輝, 井上ゆか梨, 舟窪浩

    第63回セラミックス基礎科学討論会  2025.1 

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    Event date: 2025.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟県 新潟市  

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  • Crystal structure and ferroelectricity of nitride films with wurtzite structure

    HIROSHI FUNAKUBO, Shinnosuke Yasuoka, Kazuki Okamoto, Nana SUN, Takahisa Shiraishi, 上原雅人, Shimizu Takao

    2024.12 

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    Event date: 2024.12

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • ナノクロスポイントYドープHfO2強誘電トンネル接合

    真島豊, SUN Zhongzheng, 中村美子, 岡本一輝, 伊澤誠一郎, 舟窪浩

    第34回日本MRS年次大会  2024.12 

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    Event date: 2024.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川 横浜市  

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  • Effect of Ce/(Hf+Ce) ratio on ferroelectric and piezoelectric properties of thick xCeO2-(1-x)HfO2 films deposited by sputtering method without substrate heating

    Yu-Ta Chen, Kazuki Okamoto, Kohei Shimonosono, Nachi Chaya, Nana Sun, Miki Nakahata, Wakiko Yamaoka, Yukari Inoue, Hiroshi Funakubo

    第44回電子材料研究討論会  2024.11 

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    Event date: 2024.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:神奈川  

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  • Thickness Dependence of Ferroelectricity for Thin (Al0.9Sc0.1)N-based FeRAM International conference

    Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Nana Sun, Yoshiko Nakamura, Kazuki Okamoto, Hiroshi Funakubo, Koji Tsunekawa

    The 2024 International Meeting for Future of Electron Devices, Kansai  2024.11 

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    Event date: 2024.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto  

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  • マイクロ波加熱式水熱堆積法により作製したチタン酸ジルコン酸鉛膜の特性評価

    野地航平, 横田幸恵, 島宏美, 舟窪浩, 内田寛

    第44回電子材料研究討論会  2023.10 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川  

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  • パルスレーザー堆積法を用いたZnO基固溶体薄膜の作製と電気光学特性

    藤田隼輔, 近藤真矢, 寺西貴志, 岡本一輝, 舟窪浩, 山田智明, 岸本昭

    第44回電子材料研究討論会  2024.11 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神奈川  

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  • Si直上への極薄Y-Hfバッファ層の導⼊がY添加HfO2薄膜の配向性及び強誘電性 へ及ぼす影響

    ⼩野友慈, 近藤真⽮, 寺⻄貴志, 岡本⼀輝, ⾈窪浩, ⼭⽥智明, 岸本昭

    第12回(2024年)日本化学会中国四国支部大会 岡山大会 化学教育研究発表会  2024.11 

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    Event date: 2024.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:岡山  

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  • Stable high-switching speed in (Al,Sc)N films heat-treated under H2 atmosphere International conference

    Nana Sun, Kazuki Okamoto, Shinnosuke Yasuoka, Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Hiroshi Funakubo

    37th International Microprocesses and Nanotechnology Conference  2024.11 

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    Event date: 2024.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto  

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  • Low-temperature Growth of (001)/(100)-oriented PZT Films on Glass Substrates Using Metal-Oxide Nanosheet Buffer Layer International conference

    Hiroshi Uchida, Yusuke Yamasaki, Yukie Yokota, Hiromi Shima, Hiroshi Funakubo

    21st US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2024.11 

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    Event date: 2024.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kofu, Yamanashi  

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  • Composition Dependences of Ferroelectric Properties and Curie Temperature in Epitaxial CeO2-HfO2-ZrO2 Films International conference

    Kohei Shimonosono, Yoshiki Maekawa, Nachi Chaya, Kazuki Okamoto, Wakiko Yamaoka, Yasushi Kawashima, Yukari Inoue, Hiroshi Funakubo

    21st US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2024.11 

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    Event date: 2024.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kofu, Yamanashi  

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  • Strain Relaxation and Temperature Evolution of the Structure Properties of (101)-, (111)-oriented PbTiO3 Epitaxial Film Grown by Hydrothermal Method International conference

    Yuxian Hu, Kazuki Okamoto, Takahisa Shiraishi, Hiroshi Funakubo

    21st US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2024.11 

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    Event date: 2024.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kofu, Yamanashi  

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  • Fabrication of (Mg,Si)N Films by Reactive RF Magnetron Sputtering Method and Their Structure and Electric Properties International conference

    Sotaro Kageyama, Kazuki Okamoto, Shinnosuke Yasuoka, Yoshiomi Hiranaga, Yoshihiro Ueoka, Masami Mesuda, Hiroshi Funakubo

    21st US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2024.10 

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    Event date: 2024.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kofu, Yamanash  

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  • Preparation and Characterization of Ba(Zr,Ti)O3 Films for Microwave Tunable Application International conference

    Ryo Takahashi, Yoshitaka Ehara, Yosuke Hamasaki, Shinya Sawai, Shintaro Yasui, Hiroshi Funakubo, Ken Nishida

    21st US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2024.10 

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    Event date: 2024.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kofu, Yamanashi  

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  • High Piezoelectric Performance Across a Wide Composition Range in Tetragonal (Bi,Na)TiO3-BaTiO3 Films International conference

    Keisuke Ishihama, Takao Shimizu, Kazuki Okamoto, Akinori Tateyama, Wakiko Yamaoka, Risako Tsurumaru, Shintaro Yoshimura, Yusuke Sato, Hiroshi Funakubo

    21st US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2024.10 

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    Event date: 2024.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kofu, Yamanashi  

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  • Growth of Heterovalent Ternary Nitride, (Mg,Si)N, Thin Films and Their Piezoelectricity International conference

    Sotaro Kageyama, Kazuki Okamoto, Shinnosuke Yasuoka, Yoshiomi Hiranaga, Hiroshi Uchida, Hiroshi Funakubo

    STAC14 2024 (The fourteenth International Conference on the Science and Technology for Advanced Ceramics)  2024.10 

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    Event date: 2024.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama  

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  • Ferroelectric properties and Curie temperature of epitaxial CeO2-HfO2-ZrO2 films deposited by PLD International conference

    Kouhei Shimonosono, Yoshiki Maekawa, Nachi Chaya, Kazuki Okamoto, Wakiko Yamaoka, Yasushi Kawashima, Yukari Inoue, Hiroshi Funakubo

    STAC14 2024 (The fourteenth International Conference on the Science and Technology for Advanced Ceramics)  2024.10 

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    Event date: 2024.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama  

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  • Nano-Cross-Point Ferroelectric Tunneling Junctions based on Scandium-Doped AlN International conference

    Zhongzheng Sun, Riku Shikauchi, Yoshiko Nakamura, Kazuki Okamoto, Seiichiro Izawa, Hiroshi Funakubo, Yutaka Majima

    DEJI2MA2024 (The 4th International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture)  2024.10 

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    Event date: 2024.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tokyo  

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  • (Ba, Sr, Ca)Si2膜の作製と熱電特性評価

    青山航大, 清水荘雄, 倉持豪人, 召田雅実, 秋池良, 片瀬貴義, 木村好里, 舟窪浩

    第21回日本熱電学会学術講演会 (TSJ2024)  2024.9 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:つくば市  

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  • Stable Switching of Ferroelectric (Al0.8Sc0.2)N Films as a Function of Temperature and Frequency

    HIROSHI FUNAKUBO, Shinnosuke Yasuoka, Ryoichi Mizutani, Reika Ota, Takahisa Shiraishi, Takao Shimizu, Kazuki Okamoto, Masato Uehara, Hiroshi Yamada, Morito Akiyama, Hisohi Funakubo

    IEEE UFFC-JS 2024 (IEEE Ultrasocinc, Ferroelectrics, and Frequency Control Joint Symposium)  2024.9 

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    Event date: 2024.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Taipei  

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  • Effect of Ce/(Hf+Ce) Ratio on Ferroelectric Properties of Thick xCeO2-(1-x) HfO2 Films Deposited by Sputtering Method Without Substrate Heating International conference

    Yu-Ta Chen, Kazuki Okamoto, Kohei Shimonosono, Nachi Chaya, Miki Nakahata, Wakiko Yamaoka, Yukari Inoue, Hiroshi Funakubo

    IEEE UFFC-JS 2024 (IEEE Ultrasocinc, Ferroelectrics, and Frequency Control Joint Symposium)  2024.9 

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    Event date: 2024.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Taipei  

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  • Analysis of Nanoscale Ferroelectric Domain Dynamics Based on Image Processing of Local C-V Maps International conference

    Yoshiomi Hiranaga, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho

    IEEE UFFC-JS 2024 (IEEE Ultrasocinc, Ferroelectrics, and Frequency Control Joint Symposium)  2024.9 

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    Event date: 2024.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Taipei  

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  • Development of Integrated Measurement System for Local C-V Mapping and Piezoresponse Force Microscopy International conference

    Yuki Noguchi, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yoshiomi Hiranaga

    IEEE UFFC-JS 2024 (IEEE Ultrasocinc, Ferroelectrics, and Frequency Control Joint Symposium)  2024.9 

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    Event date: 2024.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Taipei  

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  • Structural Characterization and Ferroelectric Properties of Self-Polarized Epitaxial Tetragonal (Bi,K)TiO3-PbTiO3 Films Grown by Hydrothermal Method International conference

    Yuxian Hu, Taichi Murashita, Kazuki Okamoto, Hiroshi Funakubo

    IEEE UFFC-JS 2024 (IEEE Ultrasocinc, Ferroelectrics, and Frequency Control Joint Symposium)  2024.9 

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    Event date: 2024.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Taipei  

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  • Impact of Substrate on Dielectric Tunable Properties in Epitaxial Ba(Zr,Ti)O3 Films with Different Thickness International conference

    Ryo Takahashi, Yoshitaka Ehara, Yosuke Hamasaki, Shinya Sawai, Shintaro Yasui, Hiroshi Funakubo, Ken Nishida

    IEEE UFFC-JS 2024 (IEEE Ultrasocinc, Ferroelectrics, and Frequency Control Joint Symposium)  2024.9 

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    Event date: 2024.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Taipei  

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  • Electro-Optic Effect in Ferroelectric Thin Films: From Classical Perovskites to Emerging Fluorites and Wurtzites International conference

    Tomoaki Yamada, Shinya Kondo, Xueyou Yuan, Kotoko Abe, Kazuki Okamoto, Hiroshi Funakubo, Lei Meng, Takanori Nagasaki

    IEEE UFFC-JS 2024 (IEEE Ultrasocinc, Ferroelectrics, and Frequency Control Joint Symposium)  2024.9 

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    Event date: 2024.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Taipei  

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  • 水熱法で作製した自己分極(001)配向エピタキシャル(Bi,K)TiO3-PbTiO3膜の結晶構造及び強誘電特性

    胡雨弦, 村下太一, 岡本一輝, 舟窪浩

    第85回応用物理学会秋季学術講演会  2024.9 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:日本  

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  • CeO2-HfO2-ZrO2薄膜の格子間隔と強誘電性の評価

    下野園航平, 前川芳輝, 茶谷那知, 岡本一輝, 山岡和希子, 川島康, 井上ゆか梨, 舟窪浩

    第85回応用物理学会秋季学術講演会  2024.9 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:日本  

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  • FeRAM向け (Al,Sc)N膜における強誘電特性の膜厚依存性評価

    道古宗俊, 松井尚子, 入澤寿和, 恒川孝二, Nana Sun, 中村美子, 岡本一輝, 舟窪浩

    第85回応用物理学会秋季学術講演会  2024.9 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:日本  

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  • (100)/(001)配向正方晶Pb(Zr,Ti)O3膜における圧電応答の周波数依存性

    中畑美紀, 岡本一輝, 石濱圭佑, 清水荘雄, 小金澤智之, Rosantha Kumara, 仲谷友孝, 池田理, 坂田修身, 山田智明, 舟窪浩

    第85回応用物理学会秋季学術講演会  2024.9 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:日本  

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  • High stability of the ferroelectricity against hydrogen gas in (Al,Sc)N thin films

    Nana Sun, Kazuki Okamoto, Shinnosuke Yasuoka, Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Hiroshi Funakubo

    SSDM2024 (2024 International Conference on Solid State Devices and Materials)  2024.9 

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    Event date: 2024.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Himeji  

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  • Impact of domain switching to lattice deformation under applying an electric field in tetragonal (100)/(001)-oriented Pb(Zr,Ti)O3 epitaxial films

    Miki Nakahata, Kazuki Okamoto, Takao Shimizu, Keisuke Ishihama, Tomoyuki Koganezawa, Rosantha Kumara, Tomotaka Nakatani, Osamu Ikeda, Osami Sakata, Tomoaki Yamada, Hiroshi Funakubo

    JKC-FE14 (The 14th Japan-Korea Conference on Ferroelectricity)  2024.8 

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    Event date: 2024.8 - 2024.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Shiga  

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  • Orientation-Controlled Ferroelectric PbTiO3 Films with Low Strain Directly Grown below the Curie Temperature

    Y. X. Hu, K. Okamoto, T. Shiraishi, H. Funakubo

    JCFMA-16 (The 16th Japan-China Symposium on Ferroelectric Materials and Their Applications)  2024.7 

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    Event date: 2024.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Shimane  

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  • In-situ XRD observation of crystal structure under an electric field in (100)/(001)-oriented Pb(Zr0.35, Ti0.65)O3 films

    Miki Nakahata, Keisuke Ishihama, Tomoaki Ymada, Kazuki Okamoto, Hiroshi Funakubo

    ECAPD 2024 (2024 European Conference on Applications of Polar Dielectrics)  2024.6 

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    Event date: 2024.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Trondheim  

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  • 成長基板によるエピタキシャルBa(Zr,Ti)O3薄膜の誘電チューナブル特性への影響

    高橋良, 江原祥隆, 濱嵜容丞, 澤井眞也, 安井伸太郎, 舟窪浩, 西田謙

    第41回強誘電体会議  2025.6 

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    Event date: 2024.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • CeO2-HfO2-ZrO2エピタキシャル薄膜の作製と強誘電性評価

    下野園航平, 前川芳輝, 茶谷那知, 岡本一輝, 山岡和希子, 川島康, 井上ゆか梨, 舟窪浩

    第41回強誘電体会議  2025.6 

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    Event date: 2024.6

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    Venue:京都市  

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  • CeO2-HfO2膜の基板非加熱での作製とその強誘電性評価

    茶谷那知, 山岡和希子, 川島康, 井上ゆか梨, 岡本一輝, 舟窪浩

    第41回強誘電体会議  2025.6 

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    Event date: 2024.6

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    Venue:京都市  

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  • Ferroelectricity in TaxHf1-xO2+δfilms

    Yoshiki Maekawa, Takanori Mimura, Yoshiyuki Inaguma, Kazuki Okamoto, Hiroshi Funakubo

    2025.6 

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    Event date: 2024.6

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  • 局所C-Vマッピングと圧電応答顕微鏡の統合計測システムによる強誘電体薄膜の解析

    野口雄貴, 三村和仙, 清水荘雄, 舟窪浩, 平永良臣

    第41回強誘電体会議  2025.6 

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    Event date: 2024.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • Stable ferroelectric property at high temperature under nydrogen gas in (Al, Sc)N thin films

    Nana Sun, Kazuki Okamoto, Shinnnosuke Yasuoka, Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Hiroshi Funakubo

    第41回強誘電体会議  2025.6 

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    Event date: 2024.6

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    Venue:京都市  

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  • 新規強誘電体は強誘電体をメインメモリにしうるか?―強誘電体材料の進捗―

    舟窪浩

    プラズマソサイエティ サタデーモーニング講座  2024.6 

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    Event date: 2024.6

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Thickness-dependency of ferroelectric and piezoelectric properties in HfO2-CeO2 film International conference

    Kazuki Okamoto, Koji Hirai, Takahisa Shiraishi, Wakiko Yamaoka, Risako Tsurumaru, Yukari Inoue, Hiroshi Funakubo

    IWATMD 2024 (2024 International Workshop on Acoustic Transduction Materials & Devices)  2025.5 

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    Event date: 2024.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:State College, PA,  

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  • Thickness-dependency of ferroelectric and piezoelectric properties in HfO2-CeO2 film

    Kazuki Okamoto, Koji Hirai, Takahisa Shiraishi, Wakiko Yamaoka, Risako Tsurumaru, Yukari Inoue, Hiroshi Funakubo

    IWATMD 2024 (2024 International Workshop on Acoustic Transduction Materials & Devices)  2024.5 

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    Event date: 2024.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:State College, PA  

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  • ScAlNの強誘電体としての可能性

    舟窪浩

    ワイドギャップ半導体学会 第16回研究会  2024.4 

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    Event date: 2024.4

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • 局所C-Vマップの画像処理に基づくナノスケール強誘電分極反転ダイナミクスの解析

    平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄

    第71回応用物理学会春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • High stability of ferroelectricity against hydrogen gas in (Al,Sc)N thin films

    Nana SUN, Kazuki Okamoto, Shinnosuke Yasuoka, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Soshun Doko, Hiroshi Funakubo

    第71回応用物理学会春季学術講演会  2024.3 

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    Event date: 2024.3

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    Venue:東京都  

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  • 水熱法で作製したPbTiO3エピタキシャル膜のキュリー温度及び歪み緩和

    HU Yuxian, 岡本一輝, 舟窪浩

    第71回応用物理学会春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 局所C-Vマッピングと圧電応答顕微鏡の統合計測システムの開発

    野口雄貴, 三村和仙, 清水荘雄, 舟窪浩, 平永良臣

    第71回応用物理学会春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • Pt下部電極の膜厚がAlScNの膜特性に及ぼす影響

    道古宗俊, 松井尚子, 入澤寿和, 恒川孝二, 中村美子, 岡本一輝, 舟窪浩

    第71回応用物理学会春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • スパッタリング法で作製した高Sc濃度ScGaN膜の圧電・強誘電特性

    上原雅人, 平田研二, 中村美子, 安岡慎之介, スリ アユ アンガライニ, 岡本一輝, 山田浩志, 舟窪浩, 秋山守人

    第71回応用物理学会春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • (100)/(001)配向正方晶Pb(Zr,Ti)O3膜における結晶構造のその場観察

    中畑美紀, 岡本一輝, 石濱圭佑, 清水荘雄, 小金澤智之, 仲谷友孝, 坂田修身, 山田智明, 舟窪浩

    第71回応用物理学会春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • MgSiN2薄膜の作製と特性評価

    影山壮太郎, 岡本一輝, 安岡慎之介, 上岡義弘, 召田雅実, 舟窪浩

    第71回応用物理学会春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • Ga添加によるAlNへのSc固溶量の増加とその強誘電性および圧電性への影響

    大田怜佳, 安岡慎之介, 中村美子, 岡本一輝, 原浩之, 正能大起, 上岡義弘, 召田雅実, 舟窪浩

    第71回応用物理学会春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • CeO2-HfO2-ZrO2薄膜の結晶構造と強誘電性の評価

    下野園航平, 前川芳輝, 茶谷那知, 岡本一輝, 山岡和希子, 川島康, 井上ゆか梨, 舟窪浩

    第71回応用物理学会春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 強誘電体ドメイン構造制御に向けたペロブスカイト型Sr(Zr,Ti)O3バッファ層の作製

    石濱圭佑, 岡本一輝, 森川友秀, 舟窪浩, 小寺正徳, 清水荘雄, 小金澤智之, 仲谷友孝, 坂田修身

    日本セラミックス協会 2024年年会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本市  

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  • 面内分極配向BaTiO3基エピタキシャル薄膜の作製

    清水荘雄, 岡本一輝, 舟窪浩, 小金澤智之, 仲谷友孝, 坂田修身

    日本セラミックス協会 2024年年会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本市  

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  • Progress of Research on None-Perovskite Dielectric Materials International conference

    Hiroshi Funakubo, Kazuki Okamoto, Takao Shimizu, Tomoaki Yamada

    STAC-D2MatE 2024 (The International Conference on the Science and Technology for Advanced Ceramics – Data Driven Materials Research for Electronics 2024)  2024.2 

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    Event date: 2024.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tsukuba  

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  • Ferroelectric Tunnel Junctions based on 7% Yttrium doped HfO2 (YHO7) International conference

    Zhongzheng Sun, Yoshiko Nakamura, Ryosuke Nitta, Seiichiro Izawa, Hiroshi Funakubo, Yutaka Majima

    STAC-D2MatE 2024 (The International Conference on the Science and Technology for Advanced Ceramics – Data Driven Materials Research for Electronics 2024)  2024.2 

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    Event date: 2024.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tsukuba  

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  • PLD法によるCeO2-HfO2-ZrO2薄膜の作製と評価

    下野園航平, 前川芳輝, 茶谷那知, 岡本一輝, 井上ゆか梨, 舟窪浩

    第62回セラミックス基礎科学討論会  2024.1 

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    Event date: 2024.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • チューナブルデバイス応用へ向けたBa(Zr,Ti)O3膜の作製と評価

    髙橋良, 江原祥隆, 竹尾勇司, 濱嵜容丞, 澤井眞也, 平田靖透, 宮内良広, 安井伸太郎, 安岡慎之介, 舟窪浩, 西田謙

    第62回セラミックス基礎科学討論会  2024.1 

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    Event date: 2024.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • スパッタリング法によるAlN-(Mg, Si)N膜の作製とその特性評価

    影山壮太郎, 岡本一輝, 安岡慎之介, 舟窪浩

    第62回セラミックス基礎科学討論会  2024.1 

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    Event date: 2024.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • スパッタリング法によるHfO2-CeO2強誘電体薄膜のYSZ基板上への非加熱合成

    舟窪浩, 茶谷那知, 平井浩司, 安岡慎之介, 岡本一輝, 山岡和希子, 井上ゆか梨

    第62回セラミックス基礎科学討論会  2024.1 

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    Event date: 2024.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • Ta添加HfO2薄膜の合成と強誘電性評価

    前川芳輝, 三村和仙, 稲熊宜之, 岡本一輝, 舟窪浩

    第62回セラミックス基礎科学討論会  2024.1 

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    Event date: 2024.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • Effect of gas annealing on the ferroelectric property of (Al0.8Sc0.2)N thin film

    Nana Sun, Kazuki Okamoto, Shinnosuke Yasuoka, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Hiroshi Funakubo

    第62回セラミックス基礎科学討論会  2024.1 

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    Event date: 2024.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • Ferroelectric and Piezoelectric Properties of Non-perovskite Simple Oxide International conference

    Hiroshi Funakubo, Takao Shimizu, Takanori Mimura, Kazuki Okamoto

    MRM2023/IUMRS-ICA2023  2023.12 

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    Event date: 2023.12

    Language:English   Presentation type:Oral presentation (keynote)  

    Venue:Kyoto  

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  • Preparation of {100}-Oriented Epitaxial (1-x)(Bi,K)TiO3-xCaTiO3 Solid Solution Films by Hydrothermal Method and Their Ferroelectric Property International conference

    Taichi Murashita, Hu Yuxian, Yuma Takahashi, Reika Ota, Kazuki Okamoto, Hiroshi Funakubo

    2023 MRS Fall Meeting & Exhibit  2023.11 

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    Event date: 2023.11 - 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston  

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  • Ferroelectric Property Improvement of (Al1-x-yGaxScy)N Ternary Thin Films International conference

    Reika Ota, Shinnosuke Yasuoka, Kazuki Okamoto, Yoshihiro Ueoka, Yoshiro Kususe, Masami Mesuda, Hiroshi Funakubo

    2023 MRS Fall Meeting & Exhibit  2023.11 

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    Event date: 2023.11 - 2023.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston  

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  • Characterization of Ferroelectric Switching Properties for (Al,Sc)N Films with Various Composition International conference

    Shinnosuke Yasuoka, Kazuki Okamoto, Takao Shimizu, Hiroshi Funakubo

    2023 MRS Fall Meeting & Exhibit  2023.11 

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    Event date: 2023.11 - 2023.12

    Language:English   Presentation type:Poster presentation  

    Venue:Boston  

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  • Exploring the Impact of Sr(Zr,Ti)O3 Buffer Layers for Controlling Domain Structure of Ferroelectric Thin Films International conference

    Keisuke Ishihama, Kazuki Okamoto, Masanori Kodera, Tomohide Morikawa, Takao Shimizu, Hiroshi Funakubo

    2023 MRS Fall Meeting & Exhibit  2023.11 

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    Event date: 2023.11 - 2023.12

    Language:English   Presentation type:Poster presentation  

    Venue:Boston  

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  • Influence of Thickness and Composition Dependence on Dielectric Tunability in Ba(ZrxTi1-x)O3 Films Grown on MgO Substrate International conference

    Ryo Takahashi, Yoshitaka Ehara, Yosuke Hamasaki, Shinya Sawai, Shintaro Yasui, Shinnosuke Yasuoka, Hiroshi Funakubo, Ken Nishida

    2023 MRS Fall Meeting & Exhibit  2023.11 

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    Event date: 2023.11 - 2023.12

    Language:English   Presentation type:Poster presentation  

    Venue:Boston  

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  • RFマグネトロンスパッタリング法によるSi基板上への強誘電体HfO2基薄膜の作製

    小野友慈, 近藤真矢, 寺西貴志, 岡本一輝, 舟窪浩, 山田智明, 岸本昭

    第29回ヤングセラミスト・ミーティング  2023.11 

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    Event date: 2023.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:岡山市  

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  • パルスレーザー堆積法を用いたウルツ鉱型強誘電体ZnO基固溶体薄膜の作製

    藤田隼輔, 近藤真矢, 寺西貴志, 岡本一輝, 舟窪浩, 山田智明, 岸本昭

    第29回ヤングセラミスト・ミーティング  2023.11 

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    Event date: 2023.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:岡山市  

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  • Crystal structure and electrical properties of (Al, Ga, Sc)N temary thin films prepared by RF sputtering International conference

    Kazuki Okamoto, Reika Ota, Shinnosuke Yasuoka, Yoshihiro Ueoka, Yoshiro Kususe, Masami Mesuda, Hiroshi Funakubo

    MNC 2023 (36th International Microprocesses and Nanotechnology Conference)  2023.11 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo  

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  • No heating deposition of CeO2-HfO2 ferroelectric thick films by sputtering method International conference

    Nachi Chaya, Koji Hirai, Shinnosuke Yasuoka, Kazuki Okamoto, Wakiko Yamaoka, Yukari Inoue, Hiroshi Funakubo

    MNC 2023 (36th International Microprocesses and Nanotechnology Conference)  2023.11 

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    Event date: 2023.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo  

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  • 水熱合成法で作製した(Bi, K)TiO3基強誘電体薄膜の熱処理効果とそれらの局所構造評価

    村下太一, 岡本一輝, 高橋雄真, 窪田るりか, 伊東良晴, 藤井康裕, 是枝聡肇, 清水荘雄, 小林俊介, 加藤丈晴, 黄馨慧, 森分博紀, 幾原雄一, 舟窪浩

    第43回電子材料研究討論会  2023.11 

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    Event date: 2023.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市  

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  • 水熱法による強誘電体PbTiO3エピタキシャル膜の合成とそのドメイン構造評価

    HUYUXIAN, 窪田るりか, 岡本一輝, 白石貴久, 舟窪浩

    第43回電子材料研究討論会  2023.11 

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    Event date: 2023.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市  

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  • 金属酸化物テンプレート上における化学溶液堆積法由来PZT薄膜の結晶成長機構の解明

    内田寛, 山崎佑介, 横田幸惠, 島宏美, 白石貴久, 木口賢紀, 舟窪浩

    第43回電子材料研究討論会  2023.11 

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    Event date: 2023.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市  

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  • 液相プロセスによる非鉛圧電材料(Bi, K)TiO3粉末および膜合成

    伊東良晴, 石井武, 中釜達朗, 舟窪浩

    第59回熱測定討論会  2023.10 

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    Event date: 2023.10

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東京都  

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  • Stabilization and Identification of Ferroelectric HfO2 Thin Films International conference

    Hiroshi Funakubo, Yuma Takahashi, Takahisa Shiraishi, Kodera Masanori, Reijiro Shimura, Takanori Mimura, Keisuke Ishihama, Kazuki Okamoto, Hiroki Moriwake, Ayako Taguchi, Takao Shimizu, Yasuhiro Fujii, Akitoshi Koreeda

    IWDTF2023 (2023 International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology)  2023.10 

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    Event date: 2023.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Ishikawa  

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  • Orientation Control of {100}-oriented Epitaxial Y-doped HfO2 Thin Films Using Lattice Matching International conference

    Yoshiki Maekawa, Koji Hirai, Kazuki Okamoto, Takao Shimizu, Hiroshi Funakubo

    IWDTF2023 (2023 International Workshop on Dielectric Thin Films for Future Electron Devices - Science and Technology)  2023.10 

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    Event date: 2023.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ishikawa  

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  • Nano-cross-point Ferroelectric Tunnel Junctions based on ultrathin 7% Yttrium doped HfO2 (YHO7) International conference

    Zhongzheng Sun, Yoshiko Nakamura, Ryosuke Nitta, Seiichiro Izawa, Hiroshi Funakubo, Yutaka Majima

    DEJI2MA-3 (The 3rd International Symposium on Design & Engineering by Joint Inverse Innovation for Materials Architecture)  2023.10 

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    Event date: 2023.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tokyo  

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  • ペロブスカイト型圧電結晶膜の水熱エピタキシャル合成と超音波センサへの応用に向けた検討

    吉田馨, 湊丈俊, 三嶋竜弥, 黒澤実, 舟窪浩, 池上和志, 石河睦生

    第84回応用物理学会秋季学術講演会  2023.9 

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本市  

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  • ペロブスカイト型圧電単結晶膜を用いた超小型センサの開発とその応用

    水沼 拓也, 入山 瑞希, 湊 丈俊, 黒澤 実, 舟窪 浩, 池上 和志, 石河 睦生

    第84回応用物理学会秋季学術講演会  2023.9 

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:熊本市  

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  • Domain architecture engineering of tensile-strained (PbxSr1-x)TiO3 thin films

    Xueyou Yuan, Yuto Ota, Daichi Ichinose, Takao Shimizu, Kazuki Okamoto, Yoshitaka Ehara, Masahito Yoshino, Takanori Nagasaki, Hiroshi Funakubo, Tomoaki Yamada

    第84回応用物理学会秋季学術講演会  2023.9 

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:熊本市  

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  • Impact of electric field on crystal structure and properties of HfO2-based ferroelectric films International conference

    H. Funakubo, T. Shimizu, T. Mimura, T. Shiraishi, K. Okamoto

    E-MRS 2023 Fall Meeting  2023.9 

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Warsaw  

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  • Ferroelectric thin films of post-perovskite-based materials International conference

    Hiroshi Funakubo

    Ferroelectric Thin Films (The webinar is presented jointly by the Materials Research Society and the Japan Society for Applied Physics)  2023.9 

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    Event date: 2023.9

    Language:English   Presentation type:Oral presentation (invited, special)  

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  • 引張歪み(PbxSr1-x)TiO3極薄膜の特異なドメイン構造と相転移

    山田智明, Yuan Xueyou, 太田悠登, 清水荘雄, 岡本一輝, 吉野正人, 舟窪浩, 長崎正雅

    日本セラミックス協会第36回秋季シンポジウム  2023.9 

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • 二相共存 SrSi2における熱電特性

    清水荘雄, 青山航大, 倉持豪人, 召田雅実, 秋池良, 片瀬貴義, 木村好里, 舟窪浩

    日本セラミックス協会第36回秋季シンポジウム  2023.9 

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    Event date: 2023.9

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    Venue:京都市  

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  • MgO単結晶基板上にエピタキシャル成長させたBa(Zr,Ti)O3膜の結晶構造の膜厚及び組成依存性

    高橋良, 江原祥隆, 濱嵜容丞, 澤井眞也, 安井伸太郎, 安岡慎之介, 舟窪浩, 西田謙

    日本セラミックス協会第36回秋季シンポジウム  2023.9 

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    Event date: 2023.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • Ferroelectric Tunnel Junctions based on AlScN International conference

    Riku Shikauchi, Zhongzheng Sun, Shinnosuke Yasuoka, Ryosuke Nitta, Seiichiro Izawa, Hiroshi Funakubo, Yutaka Majima

    KJF-ICOMEP 2023 (KJF International Conference on Organic Materials for Electronics and Photonics 2023)  2023.8 

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    Event date: 2023.8 - 2023.9

    Language:English   Presentation type:Poster presentation  

    Venue:Fukuoka  

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  • Nano-cross-point Ferroelectric Tunnel Junctions based on 3nm 7% Yttrium doped HfO2 (YHO7) International conference

    Zhongzheng Sun, Yoshiko Nakamura, Ryosuke Nitta, Seiichiro Izawa, Hiroshi Funakubo, Yutaka Majima

    KJF-ICOMEP 2023 (KJF International Conference on Organic Materials for Electronics and Photonics 2023)  2023.8 

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    Event date: 2023.8 - 2023.9

    Language:English   Presentation type:Poster presentation  

    Venue:Fukuoka  

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  • Research on Correlation Between Grain Boundaries and Ferroelectric Switching Behaviors Through Statistical Analysis of Local C-V Map Datasets International conference

    Yoshiomi Hiranaga, Yuki Noguchi, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho

    ISAF 2023 (IEEE International Symposium on Applications of Ferroelectrics)  2023.7 

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    Event date: 2023.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Cleveland, Ohio  

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  • Characterization of Piezoelectric (K, Na)NbO3 Films for MEMS Applications International conference

    Hiroshi Funakubo, Akinori Tateyama, Yuichiro Orino, Yoshiharu Ito, Takahisa Shiraishi, Takao Shimizu, Minoru Kurosawa

    ISAF 2023 (IEEE International Symposium on Applications of Ferroelectrics)  2023.6 

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    Event date: 2023.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Cleveland, Ohio  

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  • ガラス基板上におけるPZT 膜の選択配向成⻑と低温結晶化

    山崎佑介, 横田幸恵, 島宏美, 中村美子, 舟窪浩, 内田寛

    第40回強誘電体会議(FMA40)  2023.5 

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    Event date: 2023.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • 局所C-V マッピング法を用いたグレイン境界と強誘電分極反転挙動の関係に関する解析

    平永良臣, 野口雄貴, 三村和仙, 清水荘雄, 舟窪浩, 長康雄

    第40回強誘電体会議(FMA40)  2023.5 

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    Event date: 2023.5

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    Venue:京都市  

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  • 正⽅晶Pb(Zr,Ti)O3膜における内因的及び外因的な圧電応答の膜厚依存性

    中畑美紀, 岡本一輝, 石濱圭佑, 山田智明, 舟窪浩

    第40回強誘電体会議(FMA40)  2023.5 

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    Event date: 2023.5

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    Venue:京都市  

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  • 水熱合成法を用いた(Bi,K)TiO3-CaTiO3 固溶体薄膜の作製とそのアニール効果

    村下太一, HUYUXIAN, 高橋雄真, 大田怜佳, 岡本一輝, 舟窪浩

    第40回強誘電体会議(FMA40)  2023.5 

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    Event date: 2023.5

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    Venue:京都市  

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  • Growth of Bismuth Ferrite-Based Epitaxial Films by Hydrothermal Method and Their Characterization

    Yueyushan Cheng, Yuxian Hu, Taichi Murashita, Kazuki Okamoto, HIROSHI FUNAKUBO

    第40回強誘電体会議(FMA40)  2023.5 

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    Event date: 2023.5

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    Venue:京都市  

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  • ガラス基板上に作製された一軸配向性PZT薄膜の分極および圧電特性の改善

    山崎佑介, 横田幸恵, 島宏美, 中村美子, 舟窪浩, 内田寛

    第70回応用物理学会春季学術講演会  2023.3 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 局所C-Vマップの機械学習解析に基づくグレイン境界と強誘電ドメイン挙動の相関に関する統計的評価

    平永良臣, 野口雄貴, 三村和仙, 清水荘雄, 舟窪浩, 長康雄

    第70回応用物理学会春季学術講演会  2023.3 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 水熱法で低温作製したPbTiO3エピタキシャル膜のドメイン構造の特徴

    舟窪浩, 胡雨弦, 岡本一輝, 窪田るりか, 白石貴久

    日本セラミックス協会2023年年会  2023.3 

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    Event date: 2023.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市  

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  • SRO/Pt/Si基板上のTa2O5圧電薄膜の成膜と評価

    松浦佳祐, 鈴木雅視, 垣尾省司, 小寺正徳, 舟窪浩

    圧電材料・デバイスシンポジウム2023  2023.1 

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    Event date: 2023.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:浜松市  

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  • 水熱合成法によるPbTiO3エピタキシャル膜の作製と評価

    胡雨弦, 岡本一輝, 舟窪浩

    第61回セラミックス基礎科学討論会  2023.1 

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    Event date: 2023.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:岡山市  

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  • Crystal Structure and Electric Properties of (100) Ba(ZrxTi1-x)O3 Thin Films on MgO Substrates by Pulse Laser Deposition Technique International conference

    Ryo Takahashi, Yoshitaka Ehara, Yosuke Hamasaki, Shintaro Yasui, Shinnosuke Yasuoka, Hiroshi Funakubo, Shinya Sawai, Ken Nishida

    2022 MRS Fall Meeting & Exhibit  2022.12 

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    Event date: 2022.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston, MA  

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  • Demonstration of Ferroelectric Properties in GaN Alloyed with Sc International conference

    Masato Uehara, Ryoichi Mizutani, Shinnosuke Yasuoka, Takao Shimizu, Hiroshi Yamada, Morito Akiyama, Hiroshi Funakubo

    2022 MRS Fall Meeting & Exhibit  2022.12 

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    Event date: 2022.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston, MA  

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  • Thickness Scaling and Low Voltage Operation of Ferroelectric (Al1-xScx)N Films Prepared by Sputtering Method International conference

    Hiroshi Funakubo, Shinnosuke Yasuoka, Ryoichi Mizutani, Takahisa Shiraishi, Akinori Tateyama, Reika Ota, Kazuki Okamoto, Takao Shimizu, Masato Uehara, Hiroshi Yamada, Morito Akiyama

    2022 MRS Fall Meeting & Exhibit  2022.11 

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    Event date: 2022.11 - 2022.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston, MA  

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  • Luminescent Epitaxial β-FeSi2 Film Growth by MOCVD International conference

    K. Akiyama, H. Funakubo

    DPS2022 (43rd International Symposium on Dry Process)  2022.11 

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    Event date: 2022.11

    Language:English   Presentation type:Poster presentation  

    Venue:Osaka  

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  • Ultra-Resolution Volumetric Properties of Piezoelectrics and Dielectrics via Tomographic AFM International conference

    K. Del Cid-Ledezma, L. Ortiz, J. Kaszas, Y. Zhu, R. Ramesh, D. Meier, H. Funakubo, T. Hosokura, K. Suzuki, B. D. Huey

    2022 U.S.-Japan Seminar on Dielectric and Piezoelectric Ceramics  2022.11 

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    Event date: 2022.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Charleston, SC  

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  • Ferroelectricity of 20-nm Thick (Al0.8Sc0.2)N Thin Films with TiN Electrodes International conference

    Reika Ota, Shinnosuke Yasuoka, Ryoichi Mizutani, Takahisa Shiraishi, Kuniyuki Kakushima, Hiroshi Funakubo

    2022 U.S.-Japan Seminar on Dielectric and Piezoelectric Ceramics  2022.11 

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    Event date: 2022.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Charleston, SC  

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  • In-situ Observation of 90º-domain Switching for Piezoelectric Pb(Zr, Ti)O3 Microcantilevers International conference

    Yoshitaka Ehara, Hitoshi Morioka, Takeshi Kobayashi, Shintaro Yasui, Ken Nishida, Hiroshi Funakubo

    2022 U.S.-Japan Seminar on Dielectric and Piezoelectric Ceramics  2022.11 

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    Event date: 2022.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Charleston, SC  

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  • Ferroelectricity of Polar-axis Oriented Epitaxial (Bi, K)TiO3 Thin Films Grown by Hydrothermal Method International conference

    Hiroshi Funakubo, Rurika Kubota, Yoshiharu Ito, Akinori Tateyama, Yuxian Hu, Minoru Kurosawa

    2022 U.S.-Japan Seminar on Dielectric and Piezoelectric Ceramics  2022.11 

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    Event date: 2022.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Charleston, SC  

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  • PZT 薄膜の化学溶液堆積における選択的結晶成長と低温結晶化

    内田寛, 山崎佑介, 横田幸惠, 島宏美, 舟窪浩

    第42回電子材料研究討論会  2023.11 

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    Event date: 2022.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市  

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  • ペロブスカイト基強誘電体と比較したHfO2 やAlN 基強誘電体の特徴

    舟窪浩, 清水荘雄, 白石貴久, 岡本一輝

    第42回電子材料研究討論会  2022.11 

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    Event date: 2022.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市  

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  • Pt/Si基板上のTa2O5圧電薄膜の低レートにおける成膜と評価

    松浦佳祐, 鈴木雅視, 垣尾省司, 小寺正徳, 舟窪浩

    第43回超音波エレクトロニクスの基礎と応用に関するシンポジウム  2022.11 

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    Event date: 2022.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:京都市  

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  • Deposition and Evaluation of Highly Crystallized Ta2O5 Piezoelectric Thin Film on Pt Crystal Film International conference

    Keisuke Matsuura, Masashi Suzuki, Shoji Kakio, Masanori Kodera, Hiroshi Funakubo

    2022 IEEE IUS (International Ultrasonics Symposium)  2022.10 

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    Event date: 2022.10

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Venice  

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  • Materials Aspects of New Ferroelectrics with Simple Crystal Structure International conference

    T. Shimizu, H. Funakubo, N. Ohashi

    242nd ECS Meeting  2022.10 

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    Event date: 2022.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Atlanta, GA  

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  • Kinetic formation and field induced phase transition in ferroelectric HfO2- based materials International conference

    Takao Shimizu, Yuki Tashiro, Takanori Mimura, Hiroshi Funakubo

    KJC-FE13 (The 13th Korea-Japan Conference on Ferroelectrics)  2022.9 

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    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Busan  

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  • Composition dependence of ferroelectric properties in (111)-oriented epitaxial HfO2-CeO2 solid solution films International conference

    K. Hirai, T. Shiraishi, W. Yamaoka, R. Tsurumaru, Y. Inoue, H. Funakubo

    KJC-FE13 (The 13th korea-Japan Conference on Ferroelectrics)  2022.9 

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    Event date: 2022.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Busan  

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  • Sc添加GaN薄膜の強誘電性へのSc濃度と温度の影響

    上原雅人, 水谷涼一, 安岡慎之介, 清水荘雄, 山田浩志, 秋山守人, 舟窪浩

    第83回応用物理学会秋季学術講演会  2022.9 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台市  

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  • SRO/Pt/Si基板上のTa2O5圧電薄膜の低レートにおける成膜と評価

    松浦佳祐, 鈴木雅視, 垣尾省司, 小寺正徳, 舟窪浩

    第83回応用物理学会秋季学術講演会  2022.9 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台市  

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  • 局所C-Vマッピング法による強誘電体薄膜のナノスケール分極反転ダイナミクスのクラスタ解析

    平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄

    第83回応用物理学会秋季学術講演会  2022.9 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台市  

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  • MgO基板上に製膜したBa(ZrxTi1-x)O3の結晶構造と誘電特性

    高橋良, 江原祥隆, 濵嵜容丞, 澤井眞也, 安井伸太郎, 安岡慎之介, 舟窪浩, 西田謙

    第83回応用物理学会秋季学術講演会  2022.9 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台市  

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  • HfO2-CeO2膜の強誘電性の膜厚依存性

    平井浩司, 白石貴久, 山岡和希子, 鶴丸理沙子, 井上ゆか梨, 舟窪浩

    第83回応用物理学会秋季学術講演会  2022.9 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台市  

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  • ガラス基板上における一軸配向PZT薄膜の組成制御による分極特性の改善

    山崎佑介, 横田幸恵, 島宏美, 舟窪浩, 内田寛

    第83回応用物理学会秋季学術講演会  2022.9 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台市  

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  • 放射光時間分解XRDによる強誘電体ナノ構造の電場応答の解明と制御

    山田智明, 舟窪浩, 坂田修身

    第83回応用物理学会秋季学術講演会  2022.9 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台市  

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  • Sc置換したLiGaO2の強誘電性評価

    安原颯, 中川絢人, 白石貴久, 舟窪浩, 伊藤満, 保科拓也, 鶴見敬章

    日本セラミックス協会第35回秋季シンポジウム  2022.9 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:徳島市  

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  • 3D形状圧電結晶膜を用いた高周波強力超音波トランスデューサ―の開発とその応用

    石河睦生, 齋藤直, 吉田馨, 相川優人, 肝付兼梧, 田原麻梨江, 黒澤実, 舟窪浩

    日本セラミックス協会第35回秋季シンポジウム  2022.9 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:徳島市  

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  • MgO単結晶基板上にエピタキシャル成長させたBa(Zr, Ti)O3膜の結晶構造とその温度安定性

    髙橋良, 江原祥隆, 澤井眞也, 濱嵜容丞, 西田謙, 安井伸太郎, 白石貴久, 舟窪浩

    日本セラミックス協会第35回秋季シンポジウム  2022.9 

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    Event date: 2022.9

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    Venue:徳島市  

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  • 時間分解X線回折によるPZTのドメインスイッチングにおける周期電場の影響の研究

    清水荘雄, 江原祥隆, 坂田修身, 舟窪浩

    日本物理学会2022年秋季大会 物性  2022.9 

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    Event date: 2022.9

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    Venue:東京都  

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  • Electrical study on ferroelectric Ce doped HfO2 epitaxial thin film capacitors International conference

    Felix Cueppers, Koji Hirai, Hiroshi Funakubo

    ISFD-15 (15th International Symposium on Ferroic Domains & Micro- to Nano-scopic Structures)  2022.8 

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    Event date: 2022.8

    Language:English   Presentation type:Poster presentation  

    Venue:Kofu, Yamanashi  

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  • Domain structure change by applying an electric field in dominantly in-plane-polarized (100)/(001)-oriented tetragonal Pb(Zr,Ti)O3 films International conference

    Hiroshi Funakubo, Daichi Ichinose, Yoshitaka Ehara, Takao Shimizu, Osami Sakata, Tomoaki Yamada

    ISFD-15 (15th International Symposium on Ferroic Domains & Micro- to Nano-scopic Structures)  2022.8 

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    Event date: 2022.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Kofu, Yamanashi  

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  • Domain Structure and Properties of Epitaxial PbTiO3 Films Deposited below Curie Temperature by Hydrothermal Method International conference

    Yuxian Hu, Kazuki Okamoto, Takahisa Shiraishi, Hiroshi Funakubo

    ISFD-15 (15th International Symposium on Ferroic Domains & Micro- to Nano-scopic Structures)  2022.8 

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    Event date: 2022.8

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  • Domain Structure Evolution in Tensile-strained (PbxSr1-x)TiO3 Thin Films below 50 nm Thickness International conference

    Tomoaki Yamada, Yuto Ota, Xueyou Yuan, Daisuke Ichinose, Yoshitaka Ehara, Takao Shimizu, Masahito Yoshino, Hiroshi Funakubo, Takanori Nagasaki

    ISFD-15 (15th International Symposium on Ferroic Domains & Micro- to Nano-scopic Structures)  2022.8 

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    Event date: 2022.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Kofu, Yamanashi  

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  • Experimental discovery of structure-property relationships in ferroelectric materials via active learning: polarization switching and ferroelectric nonlinearities International conference

    Yongtao Liu, Kyle P. Kelley, Rama K. Vasudevan, Hiroshi Funakubo, Susan Trolier-McKinstry, Maxim Ziatdinov, Sergei V. Kalinin

    2022 ISAF-PFM-ECAPD Joint Conference  2022.6 

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    Event date: 2022.6 - 2022.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tours  

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  • Structural Characterization of Orientation-controlled Epitaxial PbTiO3 Films Deposited below Curie temperature by Hydrothermal Method International conference

    Hu Yuxian, Rurika Kubota, Takahisa Shiraishi, Hiroshi Funakubo

    2022 ISAF-PFM-ECAPD Joint Conference  2022.6 

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    Event date: 2022.6 - 2022.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tours  

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  • Observation of Negative Piezoelectricity in HfO2-Based Thin Film Capacitors International conference

    Pratyush Buragohain, Sangita Dutta, Haidong Lu, Sebastjan Glinšek, Hugo Aramberri, Claudia Richter, Terrence Mittmann, Pamenas Kariuki, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Uwe Schroeder, Emmanuel Defay

    2022 ISAF-PFM-ECAPD Joint Conference  2022.6 

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    Event date: 2022.6 - 2022.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tours  

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  • Domain structure of epitaxial tetragonal (Bi,K)TiO3 films grown below Curie temperature by hydrothermal method International conference

    Rurika Kubota, Yoshiharu Ito, Akinori Tateyama, Takahisa Shiraishi, Minoru Kurosawa, Hiroshi Funakubo

    2022 ISAF-PFM-ECAPD Joint Conference  2022.6 

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    Event date: 2022.6 - 2022.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tours  

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  • 新規非ペロブスカイト型強誘電体の開発

    清水荘雄, 舟窪浩, 大橋直樹

    第39回強誘電体応用会議(FMA39)  2022.6 

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    Event date: 2022.6

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    Venue:京都市  

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  • 局所C-V 曲線の非対称性に関するナノスケールマッピング

    平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄

    第39回強誘電体応用会議(FMA39)  2022.6 

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    Event date: 2022.6

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    Venue:京都市  

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  • 水熱合成法を用いて種々の合成条件で作製した(Bi,K)TiO3薄膜の結晶構造および電気特性

    窪田るりか, 舘山明紀, 白石貴久, 黒澤実, 舟窪浩, 伊東良晴

    第39回強誘電体応用会議(FMA39)  2022.6 

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    Venue:京都市  

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  • 圧電マイクロカンチレバー上のPZT 膜における電圧印加下時の90°ドメイン構造変化のその場観察

    江原祥隆, 森岡仁, 小林健, 安井伸太郎, 舟窪浩, 西田謙

    第39回強誘電体応用会議(FMA39)  2022.6 

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    Venue:京都市  

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  • 水熱合成法で作製した(K,Na)NbO3厚膜の振動特性及び発電特性の膜厚依存性

    舘山明紀, 伊東良晴, 白石貴久, 折野裕一郎, 黒澤実, 舟窪浩

    第39回強誘電体応用会議(FMA39)  2022.6 

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    Event date: 2022.6

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    Venue:京都市  

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  • (111)配向エピタキシャル(Hf,Ce)O2 膜における強誘電性の組成依存性の調査

    平井浩司, 白石貴久, 山岡和希子, 鶴丸理沙子, 井上ゆか梨, 舟窪浩

    第39回強誘電体応用会議(FMA39)  2022.6 

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    Event date: 2022.6

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    Venue:京都市  

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  • Demonstration of Ferroelectricity of YHO7 Thin Films through Piezoelectric Force Microscopy International conference

    Zhongzheng Sun, Shurong Miao, Hiroshi Funakubo, Yutaka Majima

    ISOME 2022 (12th International Symposium on Organic Molecular Electronics)  2022.5 

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama  

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  • Observation of Negative Piezoelectricity in HfO2-Based Thin-Film Capacitors International conference

    Pratyush P. Buragohain, Sangita Dutta, Haidong Lu, Sebastjan Glinsek, Hugo Aramberri, Claudia Richter, Pamenas Kariuki, Terence Mittmann, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Uwe Schroeder, Emmanuel Defay, Jorge Iniguez, Alexei Gruverman

    2022 MRS Spring Meeting & Exhibit  2022.5 

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Honolulu, Hawai’i  

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  • Intrinsic Switching in Ferroelectric Y:HfO2 Thin Film Capacitors International conference

    Pratyush P. Buragohain, Adam Erickson, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Alexei Gruverman

    2022 MRS Spring Meeting & Exhibit  2022.5 

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Honolulu, Hawai’i  

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  • Establishment of Control Method for Ferroelectric Properties in (Al1-xScx)N Films International conference

    Shinnosuke Yasuoka, Ryoichi Mizutani, Reika Ota, Takahisa Shiraishi, Takao Shimizu, Masato Uehara, Hiroshi Yamada, Morito Akiyama, Hiroshi Funakubo

    2022 MRS Spring Meeting & Exhibit  2022.5 

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    Event date: 2022.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Honolulu, Hawai’i  

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  • PLD法による(111)配向エピタキシャル(Hf,Ce)O2強誘電体膜の作製とその特性評価

    平井浩司, 白石貴久, 山岡和希子, 鶴丸理沙子, 井上ゆか梨, 舟窪浩

    第69回応用物理学会春季学術講演会  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:相模原市  

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  • 種々の電極を用いた(Al1-x,Scx)N薄膜の強誘電性評価

    大田怜佳, 安岡慎之介, 水谷涼一, 白石貴久, 舟窪浩

    第69回応用物理学会春季学術講演会  2022.3 

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    Event date: 2022.3

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    Venue:相模原市  

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  • 面内配向及び熱歪による(Al,Sc)N薄膜の強誘電特性の制御

    安岡慎之介, 水谷涼一, 大田怜佳, 白石貴久, 清水荘雄, 上原雅人, 山田浩志, 秋山守人, 舟窪浩

    第69回応用物理学会春季学術講演会  2022.3 

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    Venue:相模原市  

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  • 水熱法による配向制御されたPbTiO3エピタキシャル膜の低温製膜とその結晶構造評価

    HUYUXIAN, 窪田るりか, 白石貴久, 舟窪浩

    第69回応用物理学会春季学術講演会  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:相模原市  

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  • 薄膜化による(Al,Sc)N膜の結晶異方性及び強誘電特性の向上

    安岡慎之介, 水谷涼一, 大田怜佳, 白石貴久, 清水荘雄, 安井伸太郎, 江原祥隆, 西田謙, 上原雅人, 山田浩志, 秋山守人, 今井康彦, 坂田修身, 舟窪浩

    第69回応用物理学会春季学術講演会  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:相模原市  

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  • SRO/Pt/Si基板上のTa2O5圧電薄膜の成膜と評価

    松浦佳祐, 鈴木雅視, 垣尾省司, 小寺正徳, 舟窪浩

    第69回応用物理学会春季学術講演会  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:相模原市  

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  • ドーピングした鉄シリサイド膜のフォトルミネッセンス発光特性

    秋山賢輔, 舟窪浩

    第69回応用物理学会春季学術講演会  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:相模原市  

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  • HfO2基強誘電体の相転移における熱履歴

    三村和仙, 清水荘雄, 坂田修身, 舟窪浩

    日本物理学会第77回年次大会  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Active Learning Driven Automated Scanning Probe Microscopy Enables Discovery of Structure-Property Relationship International conference

    Yongtao Liu, Kyle P. Kelley, Rama K. Vasudevan, Hiroshi Funakubo, Susan Trolier-McKinstry, Maxim Ziatdinov, Sergei V. Kalinin

    The 2022 APS March Meeting  2022.3 

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    Event date: 2022.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Chicago, IL  

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  • 水熱法を用いた種々の原料投入量比における(Bi,K)TiO3薄膜の合成

    伊東良晴, 窪田るりか, 舘山明紀, 白石貴久, 黒澤実, 舟窪浩

    日本セラミックス協会2022年年会  2022.3 

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    Event date: 2022.3

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  • 水熱法を用いてキュリー温度以下で(001), (110), および(111)SrTiO3基板上合成したエピタキシャル(Bi,K)TiO3薄膜のドメイン構造

    窪田るりか, 舘山明紀, 白石貴久, 黒澤実, 舟窪浩, 伊東良晴

    日本セラミックス協会2022年年会  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • SrRuO3/Pt/Si基板上のTa2O5圧電薄膜の成膜と評価

    松浦佳祐, 鈴木雅視, 垣尾省司, 小寺正徳, 舟窪浩

    弾性波素子技術コンソーシアム 第6回総会  2022.3 

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  • Pt結晶膜上へのTa2O5圧電薄膜の成膜と評価

    松浦佳祐, 鈴木雅視, 垣尾省司, 小寺正徳, 舟窪浩

    圧電材料・デバイスシンポジウム  2022.1 

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    Event date: 2022.1

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • 水熱合成または高周波スパッタリングにより成膜された (K,Na)NbO3膜のBAW・SAW伝搬特性

    吉澤宗眞, 鈴木雅視, 垣尾省司, 伊東良晴, 舘山明紀, 白石貴久, 舟窪浩, 若林剛, 柴田憲治

    圧電材料・デバイスシンポジウム  2022.1 

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    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Nanoscale Domain Dynamics Characterization Using Local C-V Mapping International conference

    Hiranaga Y., Mimura T., Shimizu T., Funakubo H., Cho Y.

    ISyDMA’6 (Sixth International Symposium on Dielectric Materials and Applications)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Calais  

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  • Advancement of electro-optic effect in ferroelectric thin films: controlling classical ferroelectrics and exploring emerging ferroelectrics International conference

    T. Yamada, S. Kondo, H. Funakubo, T. Nagasaki

    PacRim 14 (14th Pacific Rim Conference on Ceramic and Glass Technology)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (invited, special)  

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  • Rapid and Low-Temperature Processing for Deposition of (K,Na)NbO3 Thick Films Using Microwave-Assisted Hydrothermal Reaction International conference

    Hiroshi Uchida, Masaki Okura, Yoshiharu Ito, Takahisa Shiraishi, Takanori Kiguchi, Toyohiko J. Konno, Hiroshi Funakubo

    MRM 2021 (Materials Research Meeting 2021),  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama  

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  • Characterization of ferroelectric film in CeO2-HfO2 system International conference

    Takahisa Shiraishi, Takanori Kiguchi, Toyohiko J. Konno, Hiroshi Funakubo

    MRM 2021 (Materials Research Meeting 2021)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama  

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  • Ferroelectricity induced by the kinetic formation in Y-HfO2 epitaxial films International conference

    Takao Shimizu, Yuki Tashiro, Takanori Mimura, Hiroshi Funakubo

    MRM 2021 (Materials Research Meeting 2021)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama  

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  • Temperature dependence of ferroelectricity in (Al1-xScx)N thin films International conference

    Ryoichi Mizutani, Shinnosuke Yasuoka, Takao Shimizu, Hiroshi Funakubo

    2021.12 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama  

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  • Growth of tetragonal (Bi,K)TiO3 epitaxial films from various input source ratio by hydrothermal method International conference

    Rurika Kubota, Akinori Tateyama, Takahisa Shiraishi, Yoshiharu Ito, Minoru Kurosawa, Hiroshi Funakubo

    MRM 2021 (Materials Research Meeting 2021)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama  

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  • Electro-optic properties in ferroelectric HfO2-based epitaxial thin films International conference

    Shinya Kondo, Reijiro Shimura, Takashi Teranishi, Akira Kishimoto, Takanori Nagasaki, Hiroshi Funakubo, Tomoaki Yamada

    MRM 2021 (Materials Research Meeting 2021)  2021.12 

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    Event date: 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama  

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  • Phase Transition Behavior and Ferroelectric Property of Chemical Solution Deposition-Derived HfO2-ZrO2 Thin Films International conference

    Ryohei Okamoto, Hiroshi Funakubo, Hiroshi Uchida

    MRM 2021 (Materials Research Meeting 2021)  2021.12 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama  

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  • Control of Ferroelectric Property in (Al1-xScx)N Films Prepared by Sputtering Method International conference

    Hiroshi Funakubo, Shinnosuke Yasuoka, Ryoichi Mizutani, Takahisa Shiraishi, Akinori Tateyama, Takao Shimizu, Masato Uehara, Hiroshi Yamada, Morito Akiyama, Yoshiomi Hiranaga, Yasuo Cho

    2021 MRS Fall Meeting & Exhibit  2021.11 

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    Event date: 2021.11 - 2021.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston, MA  

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  • 強誘電体(Al1-xScx)N薄膜の結晶構造と電気特性の関係

    安岡慎之介, 水谷涼一, 大田怜佳, 白石貴久, 清水荘雄, 上原雅人, 山田浩志, 秋山守人, 舟窪浩

    第41回電子材料研究討論会  2021.11 

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    Language:Japanese   Presentation type:Poster presentation  

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  • マイクロ波加熱式水熱プロセスにおける(KxNa1-x)NbO3膜および粉体の析出挙動の解析

    大倉雅貴, 伊東良晴, 白石貴久, 木口賢紀, 今野豊彦, 舟窪浩, 内田寛

    第41回電子材料研究討論会  2021.11 

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  • 水熱合成または高周波スパッタリングにより成膜された(K,Na)NbO3膜のSAW伝搬特性

    吉澤宗眞, 鈴木雅視, 垣尾省司, 伊東良晴, 舘山明紀, 舟窪浩, 若林剛, 柴田憲治

    第42回超音波エレクトロニクスの基礎と応用に関するシンポジウム  2021.10 

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    Event date: 2021.10

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Pt結晶膜上へのTa2O5圧電薄膜の成膜と評価

    松浦佳祐, 鈴木雅視, 垣尾省司, 小寺正徳, 舟窪浩

    第42回超音波エレクトロニクスの基礎と応用に関するシンポジウム  2021.10 

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  • HfO2基強誘電体の基礎特性と圧電応用の可能性

    舟窪浩

    第181回電子セラミック・プロセス研究会  2021.10 

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    Language:Japanese   Presentation type:Oral presentation (invited, special)  

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  • Pt結晶膜上へのTa2O5圧電薄膜の成膜と評価

    松浦佳祐, 鈴木雅視, 垣尾省司, 小寺正徳, 舟窪浩

    第50回EMシンポジウム  2021.9 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Low temperature preparation of thick Y-HfO2 ferroelectric films International conference

    Funakubo, H., Shimura, R., Mimura, T., Tateyama, A., Nakamura, Y., Shimizu, T., Yamada, T., Tanaka, Y., Inoue, Y.

    E-MRS (2021 Fall Meeting of the European Materials Research Society)  2021.9 

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    Language:English   Presentation type:Oral presentation (general)  

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  • Field-Induced Structural Change in HfO2-Based Ferroelectric Materials International conference

    Shimizu, T., Tashiro Y., Takanori M., Shiraishi T., Kiguchi T., Konno T. J., Sakata O., Funakubo H.

    E-MRS (2021 Fall Meeting of the European Materials Research Society)  2021.9 

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    Event date: 2021.9

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  • 変位型強誘電体の最前線

    舟窪浩, 白石貴久, 清水荘雄

    日本物理学会2021年秋季大会 [物性]  2021.9 

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    Language:Japanese   Presentation type:Oral presentation (invited, special)  

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  • Evaluation of BAW and SAW Properties of (K,Na)NbO3 Thin Films Deposited by RF Sputtering International conference

    Kazuma Yoshizawa, Masashi Suzuki, Shoji Kakio, Yoshiharu Ito, Akinori Tateyama, Hiroshi Funakubo, Tsuyoshi Wakabayashi, Kenji shibata

    IEEE IUS 2021  2021.9 

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  • HfO2基強誘電体膜のラマン分光測定

    高橋雄真, 白石貴久, 小寺正徳, 志村礼司郎, 三村和仙, 森分博紀, 田口綾子, 舟窪浩

    第82回応用物理学会秋季学術講演会  2021.9 

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  • 水熱合成法で作製した(K,Na)NbO3厚膜の振動特性及び発電特性の膜厚依存性

    舘山明紀, 伊東良晴, 白石貴久, 折野裕一郎, 黒澤実, 舟窪浩

    第82回応用物理学会秋季学術講演会  2021.9 

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  • Y添加HfO2強誘電体エピタキシャル薄膜の電気光学効果

    近藤真矢, 志村礼司郎, 寺西貴志, 岸本昭, 長崎正雅, 舟窪浩, 山田智明

    第82回応用物理学会秋季学術講演会  2021.9 

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  • 水熱合成法による分極軸配向した(Bi,K)TiO3薄膜の電気特性

    伊東良晴, 舘山明紀, 窪田るりか, 白石貴久, 黒澤実, 舟窪浩

    第82回応用物理学会秋季学術講演会  2021.9 

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  • 正方晶(1-x)(Bi,Na)TiO3- xBaTiO3エピタキシャル膜の結晶構造及び電気的特性の組成依存性

    石濱圭佑, 清水荘雄, 佐藤祐介, 山岡和希子, 鶴丸理沙子, 吉村真太郎, 舟窪浩

    第82回応用物理学会秋季学術講演会  2021.9 

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  • 圧電体および強誘電体薄膜における脱ペロブスカイト構造

    舟窪浩, 白石貴久, 清水荘雄

    第82回応用物理学会秋季学術講演会  2021.9 

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  • 水熱合成(K,Na)NbO3膜のSAW伝搬特性の評価

    吉澤宗眞, 鈴木雅視, 垣尾省司, 伊東良晴, 舘山明紀, 舟窪浩, 若林剛

    第82回応用物理学会秋季学術講演会  2021.9 

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  • 分極軸配向正方晶PZTエピタキシャル膜の圧電評価

    大越春香, 舘山明紀, 白石貴久, 江原祥隆, 西田謙, 舟窪浩

    第82回応用物理学会秋季学術講演会  2021.9 

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  • 水熱合成法を用いて(001), (110), (111)SrTiO3上に製膜した正方晶(Bi,K)TiO3の構造及び強誘電性

    窪田るりか, 舘山明紀, 伊東良晴, 白石貴久, 黒澤実, 舟窪浩

    第82回応用物理学会秋季学術講演会  2021.9 

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  • 局所C-Vマッピングにおける主成分分析によるノイズ除去

    平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄

    第82回応用物理学会秋季学術講演会  2021.9 

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  • Pt結晶膜上のTa2O5圧電薄膜の成膜とSAW伝搬特性の解析

    松浦佳祐, 鈴木雅視, 垣尾省司, 小寺正徳, 舟窪浩

    第82回応用物理学会秋季学術講演会  2021.9 

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  • 水熱合成法で作製した(K,Na)NbO3膜の圧電特性における方位依存性

    舘山明紀, 伊東良晴, 白石貴久, 折野裕一郎, 黒澤実, 舟窪浩

    第82回応用物理学会秋季学術講演会  2021.9 

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  • 金属基板に堆積した一軸配向(K,Na,Li)(Nb,Ta)O3厚膜の結晶構造および電気特性評価

    白石貴久, 舟窪浩

    第82回応用物理学会秋季学術講演会  2021.9 

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  • MgO単結晶基板上に(100)配向したエピタキシャルBa(ZrxTi1-x)O3薄膜の結晶構造と電気的特性

    高橋良, 江原祥隆, 安井伸太郎, 白石貴久, 舟窪浩, 西田謙

    日本セラミックス協会第34回秋季シンポジウム  2021.9 

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  • Development of non-perovskite ferroelectric thin films

    FUNAKUBO Hiroshi, SHIMIZU Takao, SHIRAISHI Takahisa

    日本セラミックス協会第34回秋季シンポジウム  2021.9 

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  • マイクロ波加熱式水熱堆積プロセスによるペロブスカイト型ニオブ酸塩配向体の高速成長

    大倉雅貴, 伊東良晴, 白石貴久, 木口賢紀, 今野豊彦, 舟窪浩, 内田寛

    日本セラミックス協会第34回秋季シンポジウム  2021.9 

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  • Y-置換HfO2基材料の強誘電性の発現

    清水荘雄, 田代裕貴, 三村和仙, 舟窪浩

    日本セラミックス協会第34回秋季シンポジウム  2021.9 

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  • Phase stability of ferroelectric HfO2-based films International conference

    Hiroshi Funakubo, Yuki Tashiro, Takanori Mimura, Takao Shimizu

    AWAD 2021 (2021 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices)  2021.8 

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    Event date: 2021.8

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  • Composition dependencies of crystal structure and electrical properties of epitaxial tetragonal (Bi,Na)TiO3-BaTiO3 films International conference

    Keisuke Ishihama, Takao Shimizu, Wakiko Yamaoka, Risako Tsurumaru, Shintaro Yoshimura, Yusuke Sato, Hiroshi Funakubo

    STAC12 (The twelfth International conference on the Science and Technology for Advanced Ceramics)  2021.7 

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  • Crystal structures, microstructures, and electrical properties of hydrothermally-deposited (K,Na,Li)(Nb,Ta)O3 epitaxial films International conference

    Takahisa Shiraishi, Hiroshi Funakubo

    STAC12 (The twelfth International conference on the Science and Technology for Advanced Ceramics)  2021.7 

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  • 面内引張り歪みを持つ正方晶 Pb(Zr, Ti)O3エピタキシャル薄膜の冷却条件によるドメイン構造への影響

    江原祥隆, 一ノ瀬大地, 小寺正徳, 森川友秀, 白石貴久, 清水荘雄, 山田智明, 舟窪浩, 西田謙

    第38回強誘電体会議(FMA 38)  2021.6 

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  • 正方晶 (1-x)(Bi, Na)TiO3-xBaTiO3膜における圧電特性の組成依存性

    石濱圭佑, 舘山明紀, 清水荘雄, 佐藤祐介, 山岡和希子, 鶴丸理沙子, 舟窪浩

    第38回強誘電体会議(FMA 38)  2021.6 

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  • 局所C-V曲線で観るナノスケール強誘電分極反転挙動

    平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄

    第38回強誘電体会議(FMA 38)  2021.6 

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  • エピタキシャルHfO2基強誘電体薄膜の電気光学特性

    近藤真矢, 志村礼司郎, 舟窪浩, 寺西貴志, 岸本昭, 山田智明

    第38回強誘電体会議(FMA 38)  2021.6 

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  • 水熱合成法 (K, Na)NbO3膜の最適作製条件

    伊東良晴, 舘山明紀, 黒澤実, 内田寛, 白石貴久, 舟窪浩

    第38回強誘電体会議(FMA 38)  2021.6 

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  • 水熱合成法で合成した (K, Na)NbO3膜における圧電特性の周波数依存性

    舘山明紀, 伊東良晴, 白石貴久, 清水荘雄, 黒澤実, 折野裕一郎, 山田智明, 舟窪浩

    第38回強誘電体会議(FMA 38)  2021.6 

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  • Effects of composition and thickness on the domain structure in tensile-strained (PbxSr1-x)TiO3 thin films

    Xueyou Yuan, Yuto Ota, Masahito Yoshino, Takanori Nagasaki, Yoshitaka Ehara, Takao Shimizu, Hiroshi Funakubo, Tomoaki Yamada

    第38回強誘電体会議(FMA 38)  2021.6 

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  • Phase transition in HfO2 ferroelectric materials investigated by XRD study International conference

    Shimizu, T., Mimura, T., Tashiro, Y., Sakata, O., Funakubo, H

    E-MRS (2021 Spring Meeting of the European Materials Research Society)  2021.5 

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  • Field-induced structural change in HfO2-based ferroelectric materials International conference

    Takao Shimizu, Takanori Mimura, Yuki Tashiro, Takanori Kiguchi, Takahisa Shiraishi, Toyohiko J. Konno, Osami Sakata, Hiroshi Funakubo

    2021 ISAF-ISIF-PFM Joint Conference  2021.5 

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  • Downscaling and low temperature deposition of ferroelectric (Al1-xScx)N thin films deposited by dual sputtering International conference

    Shinnosuke Yasuoka, Takao Shimizu, Masato Uehara, Hiroshi Yamada, Morito Akiyama, Yoshiomi Hiranaga, Yasuo Cho, Hiroshi Funakubo

    2021 ISAF-ISIF-PFM Joint Conference  2021.5 

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  • Local C-V Characterization for Ferroelectric Films International conference

    Yoshiomi Hiranaga, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Yasuo Cho

    2021 ISAF-ISIF-PFM Joint Conference  2021.5 

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  • Dynamic Manipulation in Piezoresponse Force Microscopy: Creating Non-Equilibrium Phases with Large Electromechanical Response International conference

    Kyle Kelley, Yao Ren, Anna Morozovska, Eugene Eliseev, Yoshitaka Ehara, Hiroshi Funakubo, Thierry Giamarchi, Nina Balke, Rama K. Vasudevan, Ye Cao, Stephen Jesse, Sergei V. Kalinin

    2021 ISAF-ISIF-PFM Joint Conference  2021.5 

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  • Two-step Phase Transition Behavior in Tensile-strained (PbxSr1-x)TiO3 Thin Films below 50 nm Thickness International conference

    Tomoaki Yamada, Yuto Ota, Masahito Yoshino, Daisuke Ichinose, Takao Shimizu, Hiroshi Funakubo, Takanori Nagasaki

    2021 ISAF-ISIF-PFM Joint Conference  2021.5 

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  • Film thickness dependence of ferroelectric properties in polar-axis oriented epitaxial (Bi, K)TiO3 films prepared by hydrothermal method International conference

    Rurika Kubota, Yoshiharu Ito, Akinori Tateyama, Minoru Kurosawa, Hiroshi Funakubo

    2021 ISAF-ISIF-PFM Joint Conference  2021.5 

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  • Structure Change in the HfO2 Ferroelectric Materials Induced by an Electric Field International conference

    Takao Shimizu, Takanori Mimura, Yuki Tashiro, Takahisa Shiraishi, Takanori Kiguchi, Toyohiko J. Konno, Osami Sakata, Yoshio Katsuya, Hiroshi Funakubo

    ICC8 (8th International Congress on Ceramics)  2021.4 

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  • Stability and Room Temperature Deposition of Ferroelectric Phase in Y-Doped (Hf, Zr)O2 Films International conference

    Hiroshi Funakubo, Takanori Mimura, Reijiro Shimura, Yoshiko Nakamura, Takao Shimizu

    2021 Virtual MRS Spring Meeting & Exhibit  2021.4 

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  • 強誘電体材料の最近の発展-脱ペロブスカイト構造を目指して-

    舟窪浩

    透明酸化物光・電子材料第166回委員会 第89回研究会  2021.4 

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  • 水熱合成法で作製した分極軸配向(Bi, K)TiO3膜の結晶構造と電気特性評価

    伊東良晴, 舘山明紀, 窪田るりか, 白石貴久, 黒澤実, 舟窪浩

    日本セラミックス協会2021年年会  2021.3 

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  • 水熱合成(K,Na,Li)NbO3厚膜におけるLi置換効果

    白石貴久, 舟窪浩, 木口賢紀, 今野豊彦

    日本セラミックス協会2021年年会  2021.3 

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  • 種々のZr/(Zr+Ti)比を有する分極軸配向正方晶PZTエピタキシャル膜の特性評価

    大越春香, 森川友秀, 舘山明紀, 小寺正徳, 白石貴久, 江原祥隆, 舟窪浩

    第68回応用物理学会春季学術講演会  2021.3 

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  • 種々の格子定数を有するSr(Zr, Ti)O3バッファー層上に製膜したPbTiO3薄膜のドメイン構造に関する検討

    森川 友秀, 小寺 正徳, 清水 荘雄, 江原 祥隆, 舟窪 浩

    第68回応用物理学会春季学術講演会  2021.3 

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  • 0.1CeO2-0.9HfO2膜の電気特性および圧電特性の調査

    白石貴久, 木口賢紀, 今野豊彦, 舟窪浩

    第68回応用物理学会春季学術講演会  2021.3 

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  • 水熱合成(Bi,K)TiO3薄膜作成における原料の影響

    窪田るりか, 舘山明紀, 伊東良晴, 白石貴久, 黒澤実, 舟窪浩

    第68回応用物理学会春季学術講演会  2021.3 

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  • RFスパッタリングにより成膜された(K,Na)NbO3膜のBAW・SAW特性

    吉澤宗眞, 鈴木雅視, 垣尾省司, 伊東良晴, 舘山明紀, 舟窪浩, 若林剛, 柴田憲治

    第68回応用物理学会春季学術講演会  2021.3 

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  • エピタキシャル(Al1-xScx)N膜の作製と強誘電性評価

    安岡慎之介, 清水荘雄, 舟窪浩

    第68回応用物理学会春季学術講演会  2021.3 

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  • 100℃以下で作製した (Bi,K)TiO3薄膜の圧電特性評価

    伊東良晴, 舘山明紀, 窪田るりか, 白石貴久, 黒澤実, 舟窪浩

    第68回応用物理学会春季学術講演会  2021.3 

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  • β-FeSi2/TiO2複合粒子の作製条件と光触媒効果による水分解特性

    秋山賢輔, 本泉佑, 長沼康弘, 舟窪浩, 入江寛

    第68回応用物理学会春季学術講演会  2021.3 

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  • (ScxAl1-x)N薄膜の強誘電性の温度依存性

    水谷涼一, 安岡慎之介, 清水荘雄, 舟窪浩

    第68回応用物理学会春季学術講演会  2021.3 

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  • スパッタリング法によるY-HZO強誘電体厚膜の室温製膜とその電気特性および圧電特性評価

    志村礼司郎, 三村和仙, 舘山明紀, 清水荘雄, 白石貴久, 舟窪浩

    第68回応用物理学会春季学術講演会  2021.3 

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  • Pt結晶膜上へのTa2O5圧電薄膜の成膜と評価

    松浦佳祐, 鈴木雅視, 垣尾省司, 小寺正徳, 舟窪浩

    第68回応用物理学会春季学術講演会  2021.3 

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  • 強誘電体膜における分極反転挙動のナノスケールマッピング

    平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄

    第68回応用物理学会春季学術講演会  2021.3 

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  • Y2O3-HfO2強誘電体薄膜を搭載したMEMSユニモルフカンチレバーの作製と特性評価

    海老原凌, 吉田慎哉, 志村礼司郎, 舟窪浩, 田中秀治

    第68回応用物理学会春季学術講演会  2021.3 

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  • 種々の基板上に成長した正方晶(1-x)(Bi,Na)TiO3-xBaTiO3膜の特性評価

    石濱圭佑, 舘山明紀, 清水荘雄, 佐藤祐介, 山岡和希子, 石田未来, 舟窪浩

    第68回応用物理学会春季学術講演会  2021.3 

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  • 水熱合成(K,Na)NbO3膜の電気機械結合係数の評価

    吉澤宗眞, 鈴木雅視, 垣尾省司, 伊東良晴, 舘山明紀, 舟窪浩, 若林剛

    圧電・デバイスシンポジウム2021  2021.1 

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  • Thickness and composition dependences of epitaxial ferroelectric HfO2 based films International conference

    Takanori Mimura, Takao Shimizu, Hiroshi Funakubo

    EMA2021 (Electronic Materials and Applications 2021)  2021.1 

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  • 時間分解XRD測定による周期電界下における菱面体PZTの(111)/(-111)ドメイン構造の観察

    清水荘雄, 江原祥隆, 三村和仙, 安井伸太郎, 山田智明, 今井康彦, 坂田修身, 舟窪浩

    第14回物性科学領域横断研究会(領域合同研究会)  2020.12 

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  • Evaluation of Electromechanical Coupling Coefficients of Hydrothermally Synthesized (K,Na)NbO3 Films International conference

    吉澤宗眞, 鈴木雅視, 垣尾省司, Yoshiharu Ito, Akinori Tateyama, HIROSHI FUNAKUBO, 若林剛

    2020.11 

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  • HfO2基材料における強誘電相生成機構

    清水荘雄, 田代裕貴, 三村和仙, 舟窪浩

    第40回電子材料研究討論会  2020.11 

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  • マイクロ波加熱式水熱プロセスにおけるニオブ酸カリウム基膜の堆積挙動の解析

    大倉雅貴, 伊東良晴, 白石貴久, 木口賢紀, 今野豊彦, 舟窪浩, 内田寛

    第40回電子材料研究討論会  2020.11 

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  • 正方晶 (1-x)(Bi, Na)TiO3-xBaTiO3膜の評価

    石濱圭佑, 舘山明紀, 佐藤祐介, 山岡和希子, 石田未来, 清水荘雄, 舟窪浩

    第40回電子材料研究討論会  2020.11 

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  • マイクロ波加熱式水熱合成によるニオブ酸カリウム膜堆積のプロセス低温化

    大倉雅貴, 伊東良晴, 白石貴久, 木口賢紀, 今野豊彦, 舟窪浩, 内田寛

    第40回電子材料研究討論会  2020.11 

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  • 水熱法により作製した(K,Na)NbO3基膜の結晶構造および電気特性の評価

    白石貴久, 佐野真太郎, 伊東良晴, 舘山明紀, 内田寛, 木口賢紀, 舟窪浩, 今野豊彦

    第40回電子材料研究討論会  2020.11 

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  • 縦振動を用いた薄膜の正逆圧電応答同時評価法の提案

    舘山明紀, 伊東良晴, 清水荘雄, 折野裕一郎, 黒澤実, 舟窪浩

    第81回応用物理学会秋季学術講演会  2020.9 

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  • 歪フリーなPb(Zrx,Ti1-x)O3薄膜の作製法の検討

    森川友秀, 小寺正徳, 江原祥隆, 清水荘雄, 舟窪浩

    第81回応用物理学会秋季学術講演会  2020.9 

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  • スパッタリング法で室温合成した(Al1-xScx)N膜の強誘電性評価

    安岡慎之介, 清水荘雄, 上原雅人, 山田浩志, 秋山守人, 舟窪浩

    第81回応用物理学会秋季学術講演会  2020.9 

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  • 化学気相堆積法及び水熱合成法を用いた(Bi,K)TiO3薄膜作製の検討

    窪田るりか, 伊東良晴, 黒澤実, 舟窪浩

    第81回応用物理学会秋季学術講演会  2020.9 

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  • 水熱合成法を用いた(Bi,K)TiO3薄膜の低温製膜

    伊東良晴, 舘山明紀, 黄宇, 窪田るりか, 黒澤実, 舟窪浩

    第81回応用物理学会秋季学術講演会  2020.9 

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  • スパッタリング法によるHfO2基強誘電体厚膜のシリコン基板上への室温製膜とその電気特性および圧電特性評価

    志村礼司郎, 三村和仙, 舘山明紀, 清水荘雄, 舟窪浩

    第81回応用物理学会秋季学術講演会  2020.9 

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  • Ca- Mg-Si三元系熱電材料におけるSi含有量変化に伴う導電型の制御

    片桐淳生, 上原睦雄, 黒川満央, 秋山賢輔, 松島正明, 内田寛, 木村好里, 舟窪浩

    第81回応用物理学会秋季学術講演会  2020.9 

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  • 水熱合成(K,Na)NbO3膜の電気機械結合係数の評価

    吉澤宗眞, 鈴木雅視, 垣尾省司, 伊東良晴, 舘山明紀, 舟窪浩, 若林剛

    第81回応用物理学会秋季学術講演会  2020.9 

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  • ReO3構造酸フッ化物薄膜の誘電体応⽤可能性

    小寺正徳, 舟窪浩, 田口綾子, 森分博紀, 清水荘雄

    日本セラミックス協会第33回秋季シンポジウム  2020.9 

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  • High stability of Ferroelectric phase in Y-doped HfO2 films International conference

    Hiroshi Funakubo, Takanori Mimura, Takao Shimizu

    Electroceramics XVII  2020.8 

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  • Formation of Ferroelectric Y-doped HfO2 though Atomic Layer Deposition and Low Temperature Post Annealing International conference

    Kazuto Mizutani, Yu Wei Lin, Takuya Hoshii, Hiroshi Funakubo, Hitoshi Wakabayashi, Kazuto Tsutsui, Kuniyuki Kakushima

    2020 VLSI-TSA Symposium (The 2020 International Symposium on VLSI Technology, System and Applications)  2020.8 

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  • Domain structure change by applying electric field in dominantly in-plane-polarized (100)/(001)-oriented tetragonal Pb(Zr,Ti)O3 thin film International conference

    Hiroshi Funakubo

    IEEE IFCS ISAF 2020 (Joint conference of the IEEE International Frequency Control Symposium & IEEE International Symposium on Applications of Ferroelectrics)  2020.7 

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    Event date: 2020.7

    Language:English   Presentation type:Oral presentation (invited, special)  

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  • Lead-free Potassium-Sodium-Bismuth Titanate Epitaxial Films Synthesized by Hydrothermal Method

    Yu Huang, Yoshiharu Ito, Akinori Tateyama, Minoru Kurosawa, Hiroshi Funakubo

    第37回強誘電体会議(FMA 37)  2020.5 

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    Event date: 2020.5

    Language:English   Presentation type:Oral presentation (general)  

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  • マイクロ波加熱式水熱合成プロセスによるニオブ酸カリウム基厚膜の高速堆積

    大倉雅貴, 伊東良晴, 白石貴久, 木口賢紀, 今野豊彦, 舟窪浩, 内田寛

    第37回強誘電体会議(FMA 37)  2020.5 

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    Event date: 2020.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 格子定数の異なる単結晶基板上に作成したPbTiO3 エピタキシャル薄膜の構造変化

    江原祥隆, 一ノ瀬大地, 中島崇明, 清水荘雄, 山田智明, 舟窪浩, 西田謙

    第37回強誘電体会議(FMA 37)  2020.5 

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  • 二次元スパッタリング法により作製した(Al1-xScx)N 薄膜の強誘電特性

    安岡 慎之介, 清水 荘雄, 上原雅人, 山田浩志, 秋山守人, 舟窪 浩

    第37回強誘電体会議(FMA 37)  2020.5 

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  • 水熱合成法で作製した自己分極(K,Na)NbO3 膜の正・逆圧電特性評価

    舘山明紀, 伊東良晴, 清水荘雄, 黒澤実, 折野裕一郎, 吉村武, 舟窪浩

    第37回強誘電体会議(FMA 37)  2020.5 

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    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Interface engineering of BEOL compatible ferroelectric Y:HfO2 device for enhanced endurance International conference

    J. Molina, T. Mimura, Y. Nakamura, T. Shimizu, H. Funakubo, I. Fujiwara, T. Hoshii, S. Ohmi, A. Hori, H. Wakabayashi, K. Tsutsui, K. Kakushima

    2020 IMW (The 12th International Memory Workshop)  2020.5 

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    Language:English   Presentation type:Oral presentation (general)  

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  • ReO3構造を有する酸フッ化物薄膜の誘電特性

    小寺正徳, 田口綾子, 清水荘雄, 森分博紀, 舟窪 浩

    日本セラミックス協会2020年年会  2020.3 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 水熱合成由来ニオブ酸カリウム-ナトリウム材料における不純物の分析

    内田寛, 大久保定晃, 白石貴久, 木口賢紀, 今野豊彦, 伊東良晴, 舟窪浩

    日本セラミックス協会2020年年会  2020.3 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • マイクロ波加熱式水熱合成によるニオブ酸カリウム配向体の堆積

    大倉雅貴, 内田寛, 白石貴久, 木口賢紀, 今野豊彦, 伊東良晴, 舟窪浩

    日本セラミックス協会2020年年会  2020.3 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 水熱合成法を用いたエピタキシャル(Bi, K)TiO3薄膜の合成と評価

    伊東良晴, 舘山明紀, 清水荘雄, 黒澤実, 舟窪浩

    日本セラミックス協会2020年年会  2020.3 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 面内分極配向したPbTiO3薄膜のa1/a2ドメイン構造の膜厚依存

    江原祥隆, 中島崇明, 一ノ瀬大地, 清水荘雄, 西田謙, 山田智明, 舟窪浩

    第67回応用物理学会春季学術講演会  2020.3 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • スパッタリング法によるHfO2基強誘電体厚膜の室温製膜とその電気特性評価

    志村礼司郎, 三村和仙, 舘山明紀, 清水荘雄, 舟窪浩

    第67回応用物理学会春季学術講演会  2020.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 光触媒効果による水分解に向けたルチルTiO2とb-FeSi2との複合粒子合成

    秋山賢輔, 高橋亮, 本泉佑, 舟窪浩, 入江寛

    第67回応用物理学会春季学術講演会  2020.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • PLD法で作製した正方晶(1-x)(Bi,Na)TiO3-xBaTiO3膜の評価

    石濱圭佑, 舘山明紀, 清水荘雄, 佐藤裕介, 山岡和希子, 石田未来, 舟窪浩

    第67回応用物理学会春季学術講演会  2020.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • Bi2SiO5エピタキシャル薄膜の結晶成長に関する検討

    小寺正徳, 清水荘雄, 舟窪浩

    第67回応用物理学会春季学術講演会  2020.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • エピタキシャルHfO2基膜を用いた直方晶相安定化の調査

    三村和仙, 清水荘雄, 舟窪浩

    第67回応用物理学会春季学術講演会  2020.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • (Al1-xScx)N薄膜の強誘電特性に及ぼす製膜条件の影響

    安岡慎之介, 清水荘雄, 上原雅人, 舟窪浩

    第67回応用物理学会春季学術講演会  2020.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • スパッタリング法で作製したGaNおよびSc添加GaN薄膜の強誘電性評価

    上原雅人, 安岡慎之介, 清水荘雄, 山田浩志, 秋山守人, 舟窪浩

    第67回応用物理学会春季学術講演会  2020.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 水熱合成法で作製した(KxNa1-x)NbO3自己分極膜の縦振動を用いた正逆圧電応答の同時評価

    舘山明紀, 伊東良晴, 清水荘雄, 折野裕一郎, 黒澤実, 舟窪浩

    第67回応用物理学会春季学術講演会  2020.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • マイクロ波加熱式水熱合成プロセスによる(K,Na)NbO3厚膜の堆積

    大倉雅貴, 伊東良晴, 白石貴久, 木口賢紀, 今野豊彦, 舟窪浩, 内田寛

    第67回応用物理学会春季学術講演会  2020.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • Bi2SiO5エピタキシャル薄膜の作製と強誘電性

    小寺正徳, 舟窪浩, 清水荘雄

    第4回元素戦略シンポジウム―産学連携研究新展開―  2020.2 

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    Event date: 2020.2

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • パワーデバイスやIoT用途の誘電体材料の創出

    舟窪浩, 伊藤満, 和田智志, 大橋直樹, 谷口博基, 清水荘雄

    第4回元素戦略シンポジウム―産学連携研究新展開―  2020.2 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • HfO2基強誘電体の相安定性と厚膜化

    清水荘雄, 三村和仙, 舟窪浩

    第4回元素戦略シンポジウム―産学連携研究新展開―  2020.2 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • PLD法で作製した正方晶(1-x)(Bi,Na)TiO3-xBiTiO3膜の作製と評価

    石濱圭佑, 舘山明紀, 清水荘雄, 佐藤裕介, 山岡和季子, 石田未来, 舟窪浩

    第58回セラミックス基礎科学討論会  2020.1 

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    Event date: 2020.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • HfO2基薄膜のZr, Yドープによる結晶相変化と強誘電相の安定性

    田代裕貴, 三村和仙, 清水荘雄, 勝矢良雄, 坂田修身, 木口賢紀, 白石貴久, 今野豊彦, 舟窪浩

    第58回セラミックス基礎科学討論会  2020.1 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • 二元同時スパッタリング法によるAl1-xScxN薄膜の作製と強誘電性評価

    安岡慎之介, 清水荘雄, 上原雅人, 舟窪浩

    第58回セラミックス基礎科学討論会  2020.1 

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    Venue:名古屋市  

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  • MOCVD法で作製した組成相境界近傍組成を有するエピタキシャルPZT膜の結晶構造および圧電性評価

    井上英久, 舘山明紀, 清水荘雄, 舟窪浩

    第58回セラミックス基礎科学討論会  2020.1 

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    Venue:名古屋市  

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  • 組成相境界近傍組成のPZT膜の電界による構造変化と圧電特性の評価

    舟窪浩, 井上英久, 舘山明紀, 清水荘雄

    東北大学金属材料研究所 共同利用・共同研究ワークショップ 強誘電体関連物質の機能発現に関する構造科学の新展開  2019.12 

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    Event date: 2019.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台市  

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  • マイクロ波加熱式水熱合成によるニオブ酸カリウム膜の高速エピタキシャル成長

    大倉雅貴, 内田寛, 白石貴久, 木口賢紀, 今野豊彦, 伊東良晴, 舟窪浩

    東北大学金属材料研究所 共同利用・共同研究ワークショップ 強誘電体関連物質の機能発現に関する構造科学の新展開  2019.12 

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    Event date: 2019.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台市  

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  • Dielectric properties of ReO3-type oxyfluorides prepared by hydrothermal synthesis International conference

    M. Kodera, A. Taguchi, T. Shimizu, H. Moriwake, H. Funakubo

    MRM2019 (Materials Resezrh Meeting 2019)  2019.12 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama  

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  • Phase stability and property control of ferroelectric HfO2 films International conference

    Hiroshi Funakubo, Takanori Mimura, Takao Shimizu

    MRM2019 (Materials Resezrh Meeting 2019)  2019.12 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Yokohama  

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  • The Domain Switching in Rhombohedral PZT Observed by In Situ X-Ray Diffraction Study by Various Frequencies International conference

    Takao Shimizu, Yoshitaka Ehara, Takanori Mimura, Shintaro Yasui, Tomoaki Yamada, Yasuhiko Imai, Yoshio Katsuya, Osami Sakata, Hiroshi Funakubo

    2019 MRS Fall Meeting & Exhibi  2019.12 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston  

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  • Crystal Structure Change with Electric Field for Pb(Zr,Ti)O3 Films with Near Phase Transition Composition Prepared by MOCVD International conference

    Hidehisa Inoue, Takao Shimizu, Hiroshi Funakubo

    2019 MRS Fall Meeting & Exhibit,  2019.12 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston  

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  • Good Step Coverage of Iridium Metal Films by Spray CVD International conference

    Kazuhisa Kawano, Yoshiyuki Seki, Yutaka Sawada, Hiroshi Funakubo, Noriaki Oshima

    2019 MRS Fall Meeting & Exhibit  2019.12 

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    Event date: 2019.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston  

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  • スパッタリング法を用いたY:HfO2強誘電体厚膜の作製とその電気特性評価

    志村礼司郎, 三村和仙, 清水荘雄, 舟窪浩

    第39回電子材料研究討論会  2019.11 

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    Event date: 2019.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • 引張応力下(PbXSr1-X)TiO3薄膜の膜厚がドメイン構造に与える影響

    太田悠登, 山田智明, 吉野正人, 清水荘雄, 舟窪浩, 長崎正雅

    第39回電子材料研究討論会  2019.11 

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    Event date: 2019.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:名古屋市  

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  • Lead-free tetragonal ferroelectric material: Bi(Zn1/2Ti1/2)O2-based International conference

    Shintaro Yasui, Hiroshi Funakubo

    JK-Ceramics 36 (The 36th International Japan-Korea Seminar on Ceramics)  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Tottori  

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  • Crystal Structure Change of Tetragonal {100}-oriented Pb(Zr,Ti)O3 Films by Poling Process and under Applying Electric Field International conference

    Hidehisa Inoue, Takao Shimizu, Hiroshi Funakubo

    19th US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Venue:Tsukuba  

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  • In-situ Piezoelectric Response Measurememnts of Lead-free, Bismuth-based Piezoelectric Thin Films International conference

    A. Fox, H. Funakubo, B. J. Gibbons

    19th US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Venue:Tsukuba  

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  • Preparation and Characterization of Y, Zr-doped HfO2 Thin Film by PLD Method International conference

    Yu-ki Tashiro, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo

    19th US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Venue:Tsukuba  

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  • Recent Progress on Ferroelectric HfO2 Epitaxial Films International conference

    Takao Shimizu, Takanori Mimura, Hiroshi Funakubo

    19th US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tsukuba  

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  • Stability of Ferroelectric Orthorhombic Phase in Epitaxial HfO2-based Films International conference

    Takanori Mimura, Takao Shimizu, Yoshio Katsuya, Osami Sakata, Hiroshi Funakubo

    19th US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2019.11 

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    Event date: 2019.11

    Language:English   Presentation type:Poster presentation  

    Venue:Tsukuba  

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  • Hydrothermal deposition of epitaxial (K,Na,Li)(Nb,Ta)O3 films International conference

    Takahisa Shiraishi, Yoshiharu Ito, Akinori Tateyama, Takanori Kiguchi, Hiroshi Uchida, Hiroshi Funakubo, Toyohiko. J. Konno

    PACRIM13 (The 13th Pacific Rim Conference of Ceramic Societies)  2019.10 

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    Event date: 2019.10 - 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Okinawa  

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  • The phase stability and epitaxial growth of HfO2-based ferroelectric materials International conference

    Takao Shimizu, Takanori Mimura, Hiroshi Funakubo

    PACRIM13 (The 13th Pacific Rim Conference of Ceramic Societies)  2019.10 

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    Event date: 2019.10 - 2019.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Okinawa  

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  • Low-temperature deposition of potassium niobate films by microwave-assisted hydrothermal process International conference

    Masaki Okura, Takahisa Shiraishi, Yoshiharu Ito, Takanori Kiguchi, Minoru Kurosawa, Toyohiko J. Konno, Hiroshi Funakubo, Hiroshi Uchida

    PACRIM13 (The 13th Pacific Rim Conference of Ceramic Societies)  2019.10 

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    Event date: 2019.10 - 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Okinawa  

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  • Nanodomain Structure of Ferroelectric HfO2-Based Epitaxial Thin Films International conference

    Takanori Kiguchi, Takahisa Shiraishi, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Toyohiko J. Konno

    PACRIM13 (The 13th Pacific Rim Conference of Ceramic Societies)  2019.10 

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    Event date: 2019.10 - 2019.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Okinawa  

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  • Preparation of ferroelecttic HfO2 film with a nm-order thickness International conference

    Takao Shimizu, Takanori Mimura, HIROSHI FUNAKUBO

    CJFMA11 (The 11th China and Japan Symposium on Ferroelectric Materials and TheirApplications)  2019.9 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nanjing  

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  • Preparation and characterization of Y, Zr-doped HfO2 thin films by PLD method International conference

    Yu-ki Tashiro, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo

    CJFMA11 (The 11th China and Japan Symposium on Ferroelectric Materials and TheirApplications)  2019.9 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nanjing  

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  • HfO2基薄膜の電界誘起相転移

    田代裕貴, 三村和仙, 清水荘雄, 勝矢良雄, 坂田修身, 木口賢紀, 白石貴久, 今野豊彦, 舟窪浩

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:札幌市  

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  • スパッタリング法を用いたY: HfO2強誘電体膜の室温成膜

    三村和仙, 清水荘雄, 舟窪浩

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:札幌市  

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  • (K,Na)(Nb,Ta)O3厚膜の結晶構造および電気特性の調査

    白石貴久, 舘山明紀, 伊東良晴, 木口賢紀, 内田寛, 舟窪浩, 今野豊彦

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:札幌市  

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  • 組成相境界近傍組成のPZT膜の電界による構造変化と圧電性の評価

    井上英久, 清水荘雄, 舟窪浩

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:札幌市  

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  • リン(P)ドーピングした鉄シリサイドのPL発光特性

    秋山賢輔, 野島咲子, 高橋亮, 舟窪浩

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:札幌市  

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  • (PbxSr1-x)TiO3薄膜における組成及び膜厚がドメイン構造に及ぼす影響

    太田悠登, 山田智明, 吉野正人, 清水荘雄, 舟窪浩, 長崎正雅

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:札幌市  

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  • 水熱合成法で作製した(KxNa1-x)NbO3自己分極膜の圧電特性の評価

    舘山明紀, 伊東良晴, 清水荘雄, 折野裕一郎, 黒澤実, 吉村武, 舟窪浩

    第80回応用物理学会秋季学術講演会  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:札幌市  

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  • Thickness- and orientationdependence of Curie temperature of ferroelectric epitaxial HfO2 based films International conference

    T. Mimura, T. Shimizu, Y. Katsuya, O. Sakata, H. Funakubo

    SSDM 2019 (2019 International Conference on Solid State Devices and Materials)  2019.9 

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    Event date: 2019.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Aichi  

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  • Nanostructure Analyses of Hafnia-Based Ferroelectric Thin Films by Aberration-Corrected Electron Microscopy International conference

    Takanori Kiguchi, Takahisa Shiraishi, Takanori Mimura, Takao Shimizu, Hiroshi Funakubo, Toyohiko J. Konno

    PRICM 10 (The 10th International Conference Pacific Rim on Advanced Materials and Processing)  2019.8 

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    Event date: 2019.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Xi’an  

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  • Fundamental Characteristics of Ferroelectric HfO2 Using Epitaxial Films International conference

    Hiroshi Funakubo, Takanori Mimura, Takao Shimizu

    Asia-Pacific PFM 2019  2019.8 

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    Event date: 2019.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Seoul  

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  • Thickness-dependent crystal structure of epitaxial ferroelectric 0.07YO1.5-0.93HfO2 and HZO films International conference

    Takanori Mimura, Takao Shimizu, Hiroshi Funakubo

    ISIF 2019 (7th International Symposium on Intagrated Functionalities)  2019.8 

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    Event date: 2019.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Dublin  

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  • Ferroelectricity in thick HfO2-based films International conference

    Takao Shimizu, Takanori Mimura, Hiroshi Funakubo

    ISIF 2019 (7th International Symposium on Intagrated Functionalities)  2019.8 

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    Event date: 2019.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Dublin  

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  • Pb-free perovskite thin films nad their piezoelectricity at MPB International conference

    Shintaro Yasui, Hiroshi Funakubo

    Asia-Pacific PFM 2019  2019.8 

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    Event date: 2019.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Seoul  

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  • 水熱合成法で作製した自己配向性(K,Na)NbO3厚膜の作製と評価

    舟窪 浩, 伊東 良晴, 舘山 明紀, 清水 荘雄, 黒澤 実, 内田 寛, 白石 貴久

    日本ゾル-ゲル学会 第17回討論会  2019.8 

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    Event date: 2019.8

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:東京都  

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  • Enhancement of piezoelectric response in {100}-oriented films using extrinsic contribution International conference

    Hiroshi Funakubo, Naoya Oshima, Hidehisa Inoue, Yoshitaka Ehara, Takao Shimizu, Hiroshi Uchida

    GFMAT-2/Bio-4 (2nd Global Forum on Advanced Materials and Technologies for Sustainable Development / 4th International Conference on Innovations in Biomaterials, Biomanufacturing, and Biotechnologies)  2019.7 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Toronto  

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  • Preparation of Mg2Si-based thin films and these properties International conference

    A. Katagiri, M. Uehara, T. Shimizu, M. Matsushima, K. Akiyama, H. Uchida, Y. Kimura, H. Funakubo

    APAC-SILICIDE 2019 (The Fifth Asia-Pacific Conference on Semiconducting Silicides and Related Materials)  2019.7 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Miyazaki  

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  • Characterization of Piezoelectric Coefficient E31, F for {100}-Oriented (K, Na)NbO3 Films Prepared by Hydrothermal Method International conference

    Akinori Tateyama, Yoshiharu Ito, Yoshiko Nakamura, Takao Shimizu, Yuichiro Orino, Minoru Kurosawa, Hiroshi Uchida, Takahisa Shiraishi, Takanori Kiguchi, Toyohiko Konno, Nobuhiro Kumada, Takeshi Yoshimura, Hiroshi Funakubo

    F2cπ2 2019 (Joint ISAF-ICE-EMF-IWPM-PFM meeting 2019)  2019.7 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Lausanne  

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  • Robust Ferroelectricity in Y-Doped HfO2 Films International conference

    Takao Shimizu, Takanori Mimura, Hiroshi Funakubo

    F2cπ2 2019 (Joint ISAF-ICE-EMF-IWPM-PFM meeting 2019)  2019.7 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Lausanne  

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  • Crystal Structure Change with Applying an Electric Filed in Pb(Zr, Ti)O3 Films for MEMS Applications International conference

    Hiroshi Funakubo, Naoya Ohshima, Hidehisa Inoue, Yoshitaka Ehara, Takao Shimizu, Hiroshi Uchida

    F2cπ2 2019 (Joint ISAF-ICE-EMF-IWPM-PFM meeting 2019)  2019.7 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Lausanne  

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  • Piezoelectric Responses in Tetragonal (Bi, Na)TiO3-BaTiO3 Films International conference

    Miyu Hasegawa, Takao Shimizu, Yusuke Sato, Wakiko Yamaoka, Mirai Ishida, Hiroshi Funakubo

    F2cπ2 2019 (Joint ISAF-ICE-EMF-IWPM-PFM meeting 2019)  2019.7 

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    Event date: 2019.7

    Language:English   Presentation type:Poster presentation  

    Venue:Lausanne  

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  • Robust ferroelectricity in thick HfO2-based film International conference

    Takao Shimizu, Takanori Mimura, Hiroshi funakubo

    STAC-11 (The 11th International Conference on the Science and Technology for Advanced Ceramics)  2019.7 

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    Event date: 2019.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tsukuba  

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  • The Crystallographic Origin of Giant Negative Piezoelectricity in a Layered Ferroelectric International conference

    Samuel Alexander Morris, Lu You, Apoorva Chaturvedi, Yang Zhang, Shaung Zhou, Fucai Liu, Lei Chang, Daichi Ichinose, Hiroshi Funakubo, Weijin Hu, Tom Wu, Zheng Liu, Shuai Dong, Junling Wang

    ICMAT 2019 (10th International Conference on Materials for Advanced Technologies)  2019.6 

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    Event date: 2019.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Singapore  

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  • Property Control of Ferroelectric HfO2 Films International conference

    Hiroshi Funakubo, Takanori Mimura, Takao Shimizu

    EM-NANO 2019 (The Seventh International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies)  2019.6 

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    Event date: 2019.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Nagano  

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  • STEM-EELS法によるHfO2薄膜の結晶相・配向性の評価

    木口賢紀, 白石貴久, 三村和仙, 清水荘雄, 舟窪浩, 今野豊彦

    日本顕微鏡学会第75回学術講演会  2019.6 

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    Event date: 2019.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • NiSi2 as a Promotor of Ferroelectricity in Si-doped HfO2 Thin Films after Low-Thermal Budget Processing International conference

    Joel Molina-Reyes, Haruki Iwatsuka, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima

    VLSI 2019 (2019 Symposia on VLSI Technology and Circuits)  2019.6 

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    Event date: 2019.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto  

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  • 水熱合成法による(K,Na,Li)(Nb,Ta)O3膜の作製とその結晶構造および電気特性の評価

    白石貴久, 舘山明紀, 伊東良晴, 木口賢紀, 内田寛, 黒澤実, 舟窪浩, 今野豊彦

    第36回強誘電体応用会議  2019.5 

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    Event date: 2019.5 - 2019.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • MOCVD法で作製した組成相境界近傍組成PZT膜の電界下X線回折測定

    井上英久, 清水荘雄, 舟窪浩

    第36回強誘電体応用会議  2019.5 

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    Event date: 2019.5 - 2019.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • 水熱合成法を用いた(K,Na)NbO3膜の原料の高効率化

    伊東良晴, 舘山明紀, 中村美子, 清水荘雄, 黒澤実, 舟窪浩, 内田寛, 白石貴久, 木口賢紀, 今野豊彦, 熊田伸弘

    第36回強誘電体応用会議  2019.5 

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    Event date: 2019.5 - 2019.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • PLD法を用いて作製したBi2SiO5エピタキシャル薄膜の強誘電特性

    小寺正徳, 清水荘雄, 舟窪浩

    第36回強誘電体応用会議  2019.5 

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    Event date: 2019.5 - 2019.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • PLD法による(Bi,K)TiO3-Bi(Mg,Ti)O3系エピタキシャル圧電薄膜の作製と評価

    森下純平, 佐藤祐介, 舟窪浩

    第36回強誘電体応用会議  2019.5 

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    Event date: 2019.5 - 2019.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • 一軸配向(BaSr)TiO3薄膜を用いた電気特性の結晶方位依存性評価

    内山潔, 大島直也, 江原祥隆, 及川貴弘, 田中宏樹, 内田寛, 舟窪浩

    第36回強誘電体応用会議  2019.5 

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    Event date: 2019.5 - 2019.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • Enhancement of Piezoelectric Response in (100) -oriented Films using Extrinsic Contribution International conference

    H. Funakubo, N. Oshima, H. Inoue, Y. Ehara, T. Shimizu, H. Uchida

    2019 IWATMD (2019 International Workshop on Acoustic Transduction Materials and Devices)  2019.5 

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    Event date: 2019.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:PA  

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  • 直方晶相ハフニア薄膜におけるドメイン構造

    木口賢紀, 白石貴久, 三村和仙, 清水荘雄, 舟窪浩, 今野豊彦

    日本セラミックス協会2019年年会  2019.3 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 水熱合成(K,Na)(Nb,Ta)O3 の製膜機構の調査

    白石貴久, 武藤優太, 木口賢紀, 今野豊彦, 舘山明紀, 伊東良晴, 舟窪浩, 内田寛

    日本セラミックス協会2019年年会  2019.3 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 水熱合成法を用いたReO3構造を有する酸フッ化物薄膜の作製と誘電特性評価

    小寺正徳, 清水荘雄, 舟窪浩

    日本セラミックス協会2019年年会  2019.3 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 半導体複合粒子による水分解用光触媒の作製

    秋山賢輔, 野島咲子, 高橋亮, 舟窪浩, 入江寛

    半導体複合粒子による水分解用光触媒の作製  2019.3 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神戸市  

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  • 水熱合成法で作製した(K,Na)NbO3配向膜の圧電定数,e31,f, の評価

    舘山明紀, 伊東良晴, 中村美子, 清水荘雄, 折野裕一郎, 黒澤実, 内田寛, 白石貴久, 木口賢紀, 今野豊彦, 熊田伸弘, 吉村 武, 舟窪浩

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 共スパッタ法で作製したBaxSr1-xSi2膜の熱電特性

    青山航大, 清水荘雄, 倉持豪人, 召田雅実, 秋池良, 井出啓介, 片瀬貴義, 神谷利夫, 木村好里, 舟窪浩

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3

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    Venue:東京都  

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  • スパッタリング法により配向制御したHfO2基強誘電体厚膜の作製およびその電気特性評価

    志村礼司郎, 三村和仙, 清水荘雄, 舟窪浩

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3

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    Venue:東京都  

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  • 光触媒効果による水分解に向けたSiCとβ-FeSi2半導体との複合粒子合成

    秋山賢輔, 野島咲子, 高橋亮, 舟窪浩, 入江寛

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3

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    Venue:東京都  

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  • 共スパッタ法で作製したBaxSr1-xSi2膜の熱電特性

    青山 航大, 清水 荘雄, 倉持 豪人, 召田 雅実, 秋池 良, 井手 啓介, 片瀬 貴義, 神谷 利夫, 木村 好里, 舟窪 浩

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3

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  • 組成相境界近傍組成を有するPZT膜の電界下X線回折測定

    井上 英久, 一ノ瀬大地, 清水荘雄, 舟窪浩

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • PLD法を用いたY, ZrドープHfO2薄膜の作製と評価

    田代裕貴, 三村和仙, 清水荘雄, 舟窪浩

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3

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    Venue:東京都  

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  • 強誘電体(Hf,Ce)O2薄膜の作製とその結晶構造評価

    白石貴久, Choi Sujin, 清水荘雄, 木口賢紀, 舟窪浩, 今野豊彦

    第66回応用物理学会春季学術講演会  2019.3 

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    Event date: 2019.3

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    Venue:東京都  

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  • Preferential crystal growth of BaTiO3 thick film using nanosheet templates interface layer International conference

    K. Murase, T. Shiraishi, T. Kiguchi, T. J. Konno, H. Funakubo, H. Uchida

    EMA 2019 (Electronic Materials and Applications 2019)  2019.1 

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    Event date: 2019.1

    Language:English   Presentation type:Poster presentation  

    Venue:Orlando, FL  

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  • Ferroelectric HfO2 thin films with abundant dopants International conference

    S. Nakayama, H. Funakubo, H. Uchida

    EMA 2019 (Electronic Materials and Applications 2019)  2019.1 

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    Event date: 2019.1

    Language:English   Presentation type:Poster presentation  

    Venue:Orlando, FL  

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  • PLD法を用いたY, ZrドープHfO2薄膜の作製と評価

    田代裕貴, 三村和仙, 清水荘雄, 舟窪浩

    第57回セラミックス基礎科学討論会  2019.1 

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    Event date: 2019.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台市  

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  • 組成相境界近傍組成のPZT膜のMOCVD合成とその圧電性評価

    井上英久, 一ノ瀬大地, 清水荘雄, 舟窪浩

    第57回セラミックス基礎科学討論会  2019.1 

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    Event date: 2019.1

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    Venue:仙台市  

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  • HfO2基薄膜の相安定性と機能発現

    清水荘雄, 三村和仙, 舟窪浩

    第57回セラミックス基礎討論会  2019.1 

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    Event date: 2019.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台市  

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  • 正方晶(Bi,Na)TiO3-BaTiO3膜の90°ドメインスイッチングによる圧電特性

    長谷川光勇, 清水荘雄, 佐藤祐介, 山岡和希子, 石田未来, 舟窪浩

    2019.1 

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    Event date: 2019.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台市  

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  • 共スパッタ法で作製したBaxSr1-xSi2膜の作製と熱電特性評価

    青山航大, 清水荘雄, 倉持豪人, 召田雅実, 秋池良, 井出啓介, 片瀬貴義, 神谷利夫, 木村好里, 舟窪浩

    第57回セラミックス基礎討論会  2019.1 

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    Event date: 2019.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台市  

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  • 共スパッタ法で作製したBaxSr1-xSi2膜の作製と熱電特性評価

    青山航大, 清水荘雄, 倉持豪人, 召田雅実, 秋池良, 井手啓介, 片瀬貴義, 神谷利夫, 木村好里, 舟窪 浩

    第57回セラミックス基礎科学討論会  2019.1 

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    Event date: 2019.1

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  • Synthesis of functional inorganic materials for energy issues

    Masanori Kodera, Hiroshi Funakubo

    第1回若手研究者ワークショップ「材料科学の新領域を切り拓く」  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:草津市  

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  • Composition Dependency of Thermoelectric Properties in Ca-Mg-Si System Using Thin Films Prepared by RF Magnetron Sputtering Method International conference

    Hiroshi Funakubo, Mutsuo Uehara, Mao Kurokawa, Atsuo Katagiri, Kensuke Akiyama, Takao Shimizu, Masaaki Matsusima, Hiroshi Uchida, Yoshisato Kimura

    2018 MRS Fall Meeting  2018.11 

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    Event date: 2018.11

    Language:English   Presentation type:Poster presentation  

    Venue:Boston  

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  • Synthesis and Photocatalytic Properties of Semiconducting Composite Powder International conference

    Kensuke Akiyama, Sakiko Nojima, Ryo Takahashi, Hiroshi Funakubo, Hiroshi Irie

    2018 MRS Fall Meeting  2018.11 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Bostom  

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  • Fabrication of Ferroelectric CeO2-HfO2 Solid Solution Thin Films and Their Characterization International conference

    Takahisa Shiraishi, Sujin Choi, Takao Shimizu, Takanori Kiguchi, HIROSHI FUNAKUBO, Toyohiko Konno

    2018 MRS Fall Meeting  2018.11 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston  

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  • Growth of Orientation-Controlled (K,Na)NbO3 Thick Films at 240oC by Hydrothermal Method and Their Piezoelectric Applications International conference

    Hiroshi Funakubo, Akinori Tateyama, Yoshiharu Ito, Yoshiko Nakamura, Takao Shimizu, Yuichiro Orino, Minoru Kurosawa, Hiroshi Uchida, Takahisa Shiraishi, Takanori Kiguchi, Toyohiko Konno, Nobuhiro Kumada

    2018 MRS Fall Meeting  2018.11 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston  

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  • Characterization Crystal Phase and Thermoelectric Properties of Thin Film SrSi2 International conference

    Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Yoshisato Kimura, Hiroshi Funakubo

    2018 MRS Fall Meeting  2018.11 

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    Event date: 2018.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston  

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  • 水熱法で作製する非鉛圧電体圧膜

    舟窪浩, 舘山明紀, 伊東良晴, 中村美子, 折野裕一郎, 黒澤実, 清水荘雄, 内田寛, 白石貴久, 木口賢紀, 今野豊彦, 石河睦生, 熊田伸弘

    第21回日本セラミックス協会北陸支部秋季研究発表会  2018.11 

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    Event date: 2018.11

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:富山市  

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  • 水熱法による(K,Na)(Nb,Ta)O3合成メカニズムの調査

    武藤優太, 白石貴久, 舘山明紀, 伊東良晴, 木口賢紀, 内田寛, 舟窪浩, 今野豊彦

    第17回日本金属学会東北支部研究発表大会  2018.11 

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    Event date: 2018.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:盛岡市  

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  • 水熱合成法による (KxNa1-x)NbO3厚膜のフレキシブル基材への製膜

    伊東良晴, 舘山明紀, 中村美子, 清水荘雄, 黒澤実, 舟窪浩, 内田寛, 白石貴久, 木口賢紀, 今野豊彦, 熊田伸弘, 石河睦生

    第38回エレクトロセラミックス研究討論会  2018.11 

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    Event date: 2018.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:川崎市  

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  • HfO2基強誘電体厚膜の作製と電気特性制御

    清水荘雄, 三村和仙, 舟窪浩

    2018年度セラミックス総合研究会  2018.11 

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    Event date: 2018.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:千歳市  

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  • 水熱合成法を用いたKNN膜の合成と物性

    伊東良晴, 舘山明紀, 中村美子, 清水荘雄, 黒澤実, 舟窪浩, 内田寛, 白石貴久, 木口賢紀, 今野豊彦, 熊田伸弘, 石河睦生

    第54回熱測定討論会  2018.10 

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    Event date: 2018.10 - 2018.11

    Language:Japanese   Presentation type:Poster presentation  

    Venue:横浜市  

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  • Phase Stability of HfO2-based Ferroelectric Materials and Their Property Control International conference

    Hiroshi Funakubo, Takao Shimizu, Takanori Mimura

    2018 KPS Fall Meeting  2018.10 

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    Event date: 2018.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Changwon  

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  • ゾルゲル法で作成したLa doped PbTiO3薄膜の結晶化時間に対する結晶構造及び電気特性の相関

    沼野覇豪, 西出正道, 牧野碧, 西田謙, 内田寛, 舟窪浩

    第34回日本セラミックス協会関東支部 研究発表会  2018.9 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:桐生市  

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  • (111)SrRuO3/SrTiO3基板上に成長したエピタキシャルPZT膜の膜厚方向に対する結晶構造変化

    西出正道, 河東田隆, 西田謙, 舟窪浩

    第34回日本セラミックス協会関東支部 研究発表会  2018.9 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:桐生市  

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  • Preparation of Orientation-controlled (K, Na)NbO3 Thick Films by Hydrothermal Method and Their Properties International conference

    Hiroshi Funakubo, Akinori Tateyama, Yoshiharu Ito, Takao Shimizu, Yoshiko Nakamura, Minoru Kurosawa, Hiroshi Uchida, Takanori Kiguchi, Takahisa Shiraishi, Toyohiko J. Konno, Mutsuo Ishikawa

    The 10th China-Japan Symposium on Ferroelectric Materials and Their Applications  2018.9 

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    Event date: 2018.9

    Presentation type:Oral presentation (invited, special)  

    Venue:Inuyama  

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  • MOCVD合成したβ-FeSi2薄膜におけるエネルギーバンド変調

    秋山賢輔, 野島咲子, 高橋亮, 舟窪浩

    第79回応用物理学会秋季学術講演会  2018.9 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • 水熱合成(K,Na,Li)NbO3膜の結晶構造と電気特性調査

    白石貴久, 武藤優太, 舘山明紀, 伊東良晴, 木口賢紀, 内田寛, 舟窪浩, 今野豊彦

    第79回応用物理学会秋季学術講演会  2018.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • PLD法を用いた(Bi,Na)TiO3-BaTiO3系厚膜の作製とその特性評価

    長谷川光勇, 清水荘雄, 佐藤祐介, 山岡和希子, 石田未来, 舟窪浩

    第79回応用物理学会秋季学術講演会  2018.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • 時間分解放射光X線回折を用いた菱面体晶 PZTにおける非180˚ドメインスイッチングの周波数応答 特性の評価

    清水荘雄, 江原祥隆, 三村和仙, 安井伸太郎, 山田智明, 今井康彦, 勝矢良雄, 坂田修身, 舟窪浩

    第79回応用物理学会秋季学術講演会  2018.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • 水熱合成法によるTa置換(K,Na)NbO3膜の低温合成

    武藤優太, 白石貴久, 木口賢紀, 今野豊彦, 舘山明紀, 伊東良晴, 黒澤実, 舟窪浩, 内田寛, 石河睦生

    第79回応用物理学会秋季学術講演会  2018.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • 水熱合成法で作製した(K,Na)NbO3配向膜の圧電特性評価

    舘山明紀, 伊東良晴, 中村美子, 清水荘雄, 折野裕一郎, 黒澤実, 内田寛, 白石貴久, 木口賢紀, 今野 豊彦, 石河睦生, 熊田伸弘, 舟窪浩

    第79回応用物理学会秋季学術講演会  2018.9 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • HfO2基強誘電体の相安定性と特性制御

    舟窪浩, 清水荘雄, 三村和仙

    第79回応用物理学会秋季学術講演会  2018.9 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:名古屋市  

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  • スパッタリング法によるHfO2基強誘電体の厚膜化とその電気特性評価

    志村礼司郎, 三村和仙, 清水荘雄, 舟窪浩

    第79回応用物理学会秋季学術講演会  2018.9 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • S T E M - E E L S 法による直方晶相ハフニア薄膜の結晶構造評価

    木口賢紀, 白石貴久, 三村和仙, 清水荘雄, 舟窪浩, 今野豊彦

    第79回応用物理学会秋季学術講演会  2018.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • Exact distributed-parameter analysis of piezoelectricity dependence on the resonance output power of a piezoelectric bimorph cantilever energy harvester International conference

    Minoru Kuribayashi Kurosawa, Yuichiro Orino, Yoshiharu Ito, Hiroshi Funakubo

    IWPMA2018  2018.9 

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    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kobe  

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  • 振動発電用圧電バイモルフの機械的損失係数による影響の解析

    黒澤実, 折野裕一郎, 伊東良晴, 舟窪浩

    2018年電子情報通信学会ソサイエティ大会  2018.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:石川県  

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  • Effects of heat treatment and in situ high temperature XRD study on the formation of ferroelectric epitaxial HfO2 based film International conference

    Takanori Mimura, Takao Shimizu, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Yoshio Katsuya, Osami Sakata, Hiroshi Funakubo

    SSDM 2018 (2018 International Conference on Solid State Devices and Materials)  2018.9 

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    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tokyo  

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  • Growth of epitaxial Y2O3-doped ferroelectric HfO2 films by sputtering method and their characterization International conference

    Taisei Suzkuki, Takanori Mimura, Takao Shimizu, Hiroshi Uchida, Hiroshi Funakubo

    SSDM 2018 (2018 International Conference on Solid State Devices and Materials)  2018.9 

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    Event date: 2018.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tokyo  

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  • 水熱合成(K,Na)NbO3 膜の厚膜化の検討

    舟窪浩, 舘山明紀, 伊東良晴, 中村美子, 折野裕一郎, 黒澤実, 清水荘雄, 内田寛, 白石貴久, 木口賢紀, 今野豊彦, 石河睦生, 熊田伸弘

    日本セラミックス協会 第31回秋季シンポジウム  2018.9 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • パルスレーザー堆積法による圧電Pb(Zr,Ti)O3ナノロッドの成長および物性制御

    山田智明, 岡本一輝, 坂田修身, 舟窪浩, 吉野正人, 長崎正雅

    日本セラミックス協会 第31回秋季シンポジウム  2018.9 

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    Venue:名古屋市  

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  • 直方晶相ハフニア薄膜のドメイン構造の電子エネルギー損失分光

    木口賢紀, 崔瓍珍, 白石貴久, 三村和仙, 清水荘雄, 舟窪浩, 今野豊彦

    日本セラミックス協会 第31回秋季シンポジウム  2018.9 

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    Venue:名古屋市  

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  • マイクロ波加熱式水熱合成プロセスによるニオブ酸カリウム-ナトリウム膜の堆積と組成制御

    内田寛, 白石貴久, 木口賢紀, 赤間章裕, 今野豊彦, 石河睦生, 伊東良晴, 黒澤実, 舟窪浩

    日本セラミックス協会 第31回秋季シンポジウム  2018.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • 水熱合成法による(K,Na,Li)NbO3膜の低温作製

    白石貴久, 武藤優太, 木口賢紀, 今野豊彦, 舘山明紀, 伊東良晴, 黒澤実, 舟窪浩, 内田寛, 石河睦生

    日本セラミックス協会 第31回秋季シンポジウム  2018.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • Fabrication and evaluation of (Bi, Na)TiO3-BaTiO3 based thin film by using PLD method International conference

    Miyu Hasegawa, Takao Shimizu, Yusuke Sato, Wakiko Yamaoka, Mirai Ishida, Hiroshi Uchida, Hiroshi Funakubo

    12th Japan-Korea Conference on Ferroelectrics  2018.8 

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    Event date: 2018.8

    Language:English   Presentation type:Poster presentation  

    Venue:Nara  

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  • Phase transition and ferroelectric property of Ca doped HfO2 thin films International conference

    S. Nakayama, H. Funakubo, H. Uchida

    12th Japan-Korea Conference on Ferroelectrics  2018.8 

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    Event date: 2018.8

    Language:English   Presentation type:Poster presentation  

    Venue:Nara  

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  • Growth of Mg-Ca-Si thick flms by RF sputtering method and their thermoelectric property International conference

    Hiroshi Funakubo, Mutsuo Uehara, Mao Kurokawa, Atsuo Katagiri, Kensuke Akiyama, Takao Shimizu, Masaaki Matsusima, Hiroshi Uchida, Yoshisato Kimura

    ICT 2018 (2018 International and European Conference on Thermoelectrics)  2018.7 

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    Event date: 2018.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Caen  

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  • MOCVD growth of Luminescent β-FeSi2 Film on Treated Si Surface by Silver International conference

    Kensuke Akiyama, Ryo Takahashi, Yoshihisa Matsumoto, Hiroshi Funakubo

    ICMOVPE-ⅩⅨ (19th International Conference on Metalorganic Vapor Phase Epitaxy)  2018.6 

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    Event date: 2018.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nara  

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  • In-situ Piezoelectric Response Measurements of Lead-free, Bismuth-based Piezoelectric Thin Films International conference

    A. Fox, H. Funakubo, B. J. Gibbons

    IFAAP 2018 (2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference)  2018.5 

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    Event date: 2018.5 - 2018.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hiroshima  

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  • Temperature Stability of Ferroelectric Phase of Epitaxial Y-doped HfO2 Films International conference

    T. Mimura, T. Shimizu, T. Kiguchi, A. Akama, T. J. Konno, Y. Katsuya, O. Sakata, H. Funakubo

    IFAAP 2018 (2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference)  2018.5 

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    Event date: 2018.5 - 2018.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hiroshima  

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  • Charge Screening Strategy for Controlling Domain Structure and Piezoelectric Property in Ferroelectric Nano-Rods International conference

    T. Yamada, D. Ito, T. Sluka, O. Sakata, H. Funakubo, T. Namazu, M. Yoshino, N. Setter, T. Nagasaki

    IFAAP 2018 (2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference)  2018.5 

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    Event date: 2018.5 - 2018.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hiroshima  

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  • Fabrication of CeO2-ZrO2 Solid Solution Ultrathin Films with Polar Phase International conference

    T. Shiraishi, S. Choi, T. Shimizu, T. Kiguchi, H. Funakubo, T. J. Konno

    IFAAP 2018 (2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference)  2018.5 

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    Event date: 2018.5 - 2018.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hiroshima  

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  • Domain Structure and Electric Field Induced Domain Switching in HfO2 Ferroelectrics

    T. Shimizu, T. Mimura, T. Kiguchi, A. Akama, T. J. Konno, Y. Katsuya, O. Sakata, H. Funakubo

    IFAAP 2018 (2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference)  2018.5 

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    Event date: 2018.5 - 2018.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hiroshima  

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  • Crystallization Behavior and Ferroelectric Property of HfO2-ZrO2 Films Fabricated by Chemical Solution Deposition International conference

    S. Nakayama, H. Funakubo, H. Uchida

    IFAAP 2018 (2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference)  2018.5 

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    Event date: 2018.5 - 2018.6

    Language:English   Presentation type:Poster presentation  

    Venue:Hiroshima  

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  • Epitaxial Growth of (101)Pd on (111)SrTiO3 Substrate as a Buffer Layer for Perovskite-Type Oxide Thin Films International conference

    K. Uchiyama, H. Tanaka, T. Oikawa, T. Shimizu, T. Kariya, H. Funakubo

    IFAAP 2018 (2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference)  2018.5 

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    Event date: 2018.5 - 2018.6

    Language:English   Presentation type:Poster presentation  

    Venue:Hiroshima  

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  • Electron Microscopic Study on Domain Structure in HfO2 International conference

    T. Kiguchi, T. Shiraishi, T. Shimizu, T. Mimura, H. Funakubo, T. J. Konn

    IFAAP 2018 (2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference)  2018.5 

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    Event date: 2018.5 - 2018.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hiroshima  

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  • Theoretical Caluculations of Ferroelectricity in Thin-Film HfO2 Using Comprehensive Soft-Mode Analysis International conference

    H. Moriwake, A. Konishi, A. Togo, T. Shimizu, H. Funakubo

    IFAAP 2018 (2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference)  2018.5 

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    Event date: 2018.5 - 2018.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hiroshima  

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  • Fabrication of Orientation-Controlled BaTiO3 Thick Films by Chemical Solution Deposition Using Nanosheet Interface Layer International conference

    K. Murase, T. Shiraishi, T. Kiguchi, A. Akama, T. J. Konno, H. Funakubo, H. Uchida

    IFAAP 2018 (2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference)  2018.5 

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    Event date: 2018.5 - 2018.6

    Language:English   Presentation type:Poster presentation  

    Venue:Hiroshima  

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  • Effect of Starting Material on the Deposition Behavior and Their Film Properties in Orientation-Controlled (K,Na)NbO3 Thick Films Prepared by Hydrothermal Method International conference

    A. Tateyama, Y. Ito, Y. Nakamura, T. Shimizu, Y. Orino, M. Kurosawa, H. Uchida, T. Shiraishi, T. Kiguchi, T.J. Konno, N. Kumada, H. Funakubo

    IFAAP 2018 (2018 ISAF-FMA-AMF-AMEC-PFM Joint Conference)  2018.5 

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    Event date: 2018.5 - 2018.6

    Language:English   Presentation type:Poster presentation  

    Venue:Hiroshima  

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  • Strain-induced resistance change in a V2O3 film transferred onto a piezoelectric disk International conference

    Joe Sakai, Maxime Bavencoffe, Beatrice Negulescu, Patrice Limelette, Jérôme Wolfman, Hiroshi Funakubo

    2018 MRS Spring Meeting & Exhibit  2018.4 

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    Event date: 2018.4

    Language:English   Presentation type:Poster presentation  

    Venue:Phoenix, AZ  

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  • 振動発電用圧電バイモルフにおける負荷抵抗特性の周波数領域解析

    折野裕一郎, 伊東良晴, 舟窪浩, 黒澤実

    2018年電子情報通信学会総合大会  2018.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • PLD法を用いた(Bi,Na)TiO3-BaTiO3系薄膜の作製と評価

    長谷川光勇, 清水荘雄, 佐藤祐介, 山岡和希子, 石田未来, 内田寛, 舟窪浩

    第65回応用物理学会春季学術講演会  2018.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 種々のNb原料から水熱合成法で作製した(K,Na)NbO3配向膜の合成と特性評価

    舘山明紀, 伊東良晴, 中村美子, 清水荘雄, 折野裕一郎, 黒澤実, 内田寛, 白石貴久, 木口賢紀, 今野 豊彦, 石河睦生, 熊田伸弘, 舟窪浩

    第65回応用物理学会春季学術講演会  2018.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 圧電ナノジェネレータに向けた強誘電体ナノロッドの成長と物性制御

    山田智明, 岡本一輝, 伊藤大介, Song Jundong, Sluka Tomas, Setter Nava, 坂田修身, 舟窪浩, 吉野正人, 長崎正雅

    第65回応用物理学会春季学術講演会  2018.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • スパッタリング法によるSr-Si膜の作製

    青山航大, 清水荘雄, 倉持豪人, 召田雅実, 秋池良, 木村好里, 舟窪浩

    第65回応用物理学会春季学術講演会  2018.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • Piezoelectronic magnetoresistive-device and its low-voltage MRAM application

    Y. Takamura, S. Yamamoto, H. Funakubo, M.K. Kurosawa, S. Nakagawa, S. Sugahara

    The 65th JSAP Spring Meeting  2018.3 

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    Event date: 2018.3

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Tokyo  

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  • エピタキシャルCeO2-ZrO2薄膜の作製とその結晶構造評価

    白石貴久, Sujin Choi, 清水荘雄, 木口賢紀, 舟窪浩, 今野豊彦

    第65回応用物理学会春季学術講演会  2018.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 窒素(N)ドーピングした鉄シリサイドのPL発光特性

    秋山賢輔, 高橋亮, 松本佳久, 舟窪浩

    第65回応用物理学会春季学術講演会  2018.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 水熱合成によるフレキシブル基板への圧電体成膜

    舟窪浩, 伊東良晴, 舘山明紀, 中村美子, 清水荘雄, 黒澤実, 内田寛, 白石貴久, 木口賢紀, 今野豊彦, 石河睦生

    第65回応用物理学会春季学術講演会  2018.3 

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  • エピタキシャルHfO2基強誘電体における強誘電特性の膜厚依存性

    三村和仙, 清水荘雄, 勝矢良雄, 坂田修身, 舟窪浩

    第65回応用物理学会春季学術講演会  2018.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 化学溶液堆積法によるCa2+添加HfO2強誘電体薄膜の作製

    中山周平, 舟窪浩, 内田寛

    第65回応用物理学会春季学術講演会  2018.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • Design of a new piezoelectronic transistor and its device and circuit performances

    Yusaku Shiotsu, Shuichiro Yamamoto, Yusuke Shuto, Hiroshi Funakubo, Minoru Kuribayashi Kurosawa, Satoshi Sugahara

    The 65th JSAP Spring Meeting  2018.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:Tokyo  

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  • Solid-phase crystallization of highly-oriented Bi2VO5+δ thin films by thermal treatment under uniaxial compression and characterization

    Shoyo Ito, Ryoutarou Nanba, Takanori Mimura, Satoru Kaneko, HIROSHI FUNAKUBO, Akifumi Matsuda, MAMORU YOSHIMOTO

    The 65th JSAP Spring Meeting, 2018  2018.3 

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    Language:Japanese   Presentation type:Poster presentation  

    Venue:Tokyo  

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  • ZrO2 薄膜の結晶構造に対するドーパント効果

    崔瓍珍, 白石貴久, 木口賢紀, 今野豊彦, 清水荘雄, 舟窪浩

    日本セラミックス協会 2018年年会  2018.3 

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    Language:Japanese   Presentation type:Poster presentation  

    Venue:仙台市  

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  • 水熱合成法によるLi 置換(K,Na)NbO3 膜の作製

    白石貴久, 武藤優太, 木口賢紀, 今野豊彦, 伊東良晴, 黒澤実, 舟窪浩, 内田寛, 石河睦生

    日本セラミックス協会 2018年年会  2018.3 

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    Language:Japanese   Presentation type:Poster presentation  

    Venue:仙台市  

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  • 水熱合成(K,Na)(Nb,Ta)O3 膜の作製と結晶構造評価

    武藤優太, 白石貴久, 木口賢紀, 今野豊彦, 伊東良晴, 黒澤実, 舟窪浩, 内田寛, 石河睦生

    日本セラミックス協会 2018年年会  2018.3 

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    Venue:仙台市  

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  • 蛍石構造酸化物のアニオン制御による“直接特性制御型強誘電体”の創成

    舟窪 浩

    新学術領域研究「ナノ構造情報のフロンティア開拓―材料科学の新展開」第5回公開シンポジウム  2018.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • Fabrication of HfO2-based ferroelectric ultrathin films

    T. Shiraishi, S. Choi, T. Shimizu, T. Kiguchi, H. Funakubo, T. J. Konno

    Kich-off Symposium for World Leading Research Center –Materials Science and spintronics-  2018.2 

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    Event date: 2018.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sendai  

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  • 圧電厚膜の諸特性が振動発電デバイスの性能に及ぼす影響に関する理論的検討

    折野裕一郎, 伊東良晴, 舟窪浩, 黒澤実

    圧電材料・デバイスシンポジウム2018  2018.2 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台市  

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  • Room temperature photoluminescence spectrum from β-FeSi2 films International conference

    Kensuke Akiyama, Yoshihisa Matsumoto, Hiroshi Funakubo

    SPIE. Photonics West  2018.1 

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    Event date: 2018.1 - 2018.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:San Francisco, CA  

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  • Domain switching in epitaxial ferroelectric HfO2 films International conference

    T. Shimizu, T. Mimura, T. Kiguchi, T. Shiraishi, A. Akama, T. J. Konno, O. Sakata, K. Yoshio, H. Funakubo

    2018 Conference on Electronic and Advanced Materials  2018.1 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:FL  

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  • Growth of orientation-controlled epitaxial (K, Na)NbO3 thick films and their ferroelectric and piezoelectric properties International conference

    Y. Ito, A. Tateyama, Y. Nakamura, T. Shimizu, M. Kurosawa, H. Funakubo, H. Uchida, T. Shiraishi, T. Kiguchi, T. J. Konno, M. Ishikawa

    2018 PiezoMEMS Workshop  2018.1 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:FL  

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  • In-situ Piezoelectric Response Measurements of Lead-free, Bismuth-based, Piezoelectric Thin Films International conference

    A. Fox, B. Gibbons, H. Funakubo

    2018 Conference on Electronic and Advanced Materials  2018.1 

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    Event date: 2018.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:FL  

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  • Direct and qualitative characterization of the 90° domain switching under applying electric field in tetragonal Pb(Zr, Ti)O3 film International conference

    T. Shimizu, N. Oshima, T. Sato, D. Ichinose, T. Yamada, O. Sakata, H. Funakubo

    2018 PiezoMEMS Workshop  2018.1 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:FL  

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  • Novel Bi-based perovskite piezoelectric materials as an alternative to PZT International conference

    Shintaro Yasui, Hiroshi Uchida, Hiroshi Funakubo

    2018 PiezoMEMS Workshop  2018.1 

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    Event date: 2018.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:FL  

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  • 水熱合成法で作製した配向制御された(K, Na)NbO3膜の析出挙動に及ぼす出発原料の影響と得られた膜の特性評価

    舘山明紀, 伊東良晴, 中村美子, 清水荘雄, 折野裕一郎, 黒澤実, 内田寛, 白石貴久, 木口賢紀, 今野豊彦, 熊田伸弘, 舟窪浩

    第56回セラミックス基礎科学討論会  2018.1 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:つくば市  

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  • PLD法を用いた(Bi, Na)TiO3-BaTiO3系薄膜の作製と評価

    長谷川光勇, 清水荘雄, 佐藤祐介, 山岡和希子, 内田寛, 舟窪浩

    第56回セラミックス基礎科学討論会  2018.1 

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    Venue:つくば市  

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  • Development of Proton Concoctive Perovskite-type Oxide Thin Films for Fuel Cell Application

    K. Uchiyama, H. Tanaka, T. Shimizu, H. Funakubo

    第27回日本MRS年次大会  2017.12 

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    Event date: 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:横浜市  

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  • Piezoelectric Response Induced Phase Transition in Perovskite Thin Films International conference

    Hyeon Jun Lee, Chan-Ho Yang, Hiroshi Funakubo, Ji Young Jo

    2017 MRS Fall Meeting  2017.11 

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    Event date: 2017.11 - 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston, MA  

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  • Control of P-Type and N-Type Conduction in Thermoelectric Mg2Si Thin Films Prepared by Sputtering Method International conference

    Mao Kurokawa, Mutsuo Uehara, Daichi Ichinose, Takao Shimizu, Kensuke Akiyama, Masaaki Matsushima, Hiroshi Uchida, Yoshisato Kimura, Atsuo Katagiri, Hiroshi Funakubo

    2017 MRS Fall Meeting  2017.11 

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    Event date: 2017.11 - 2017.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston, MA  

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  • HfO2基強誘電体への期待:現状と将来

    舟窪浩

    応用物理学会システムデバイスロードマップ委員会 ERM / BC 合同ワークショップ  2017.11 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • Domain structure change by applying electric field of dominantly in-plane-polarized (100)/(001)-oriented tetragonal Pb(Zr, Ti)O3 thin film International conference

    Daichi Ichinose, Yoshitaka Ehara, Takao Shimizu, Osami Sakata, Tomoaki Yamada, Hiroshi Funakubo

    18th US-Japan Seminar on Dielectric and Piezoelectric Materials  2017.11 

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    Event date: 2017.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Santa Fe, New Mexico  

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  • Domain pattern control in Pb(Zr, Ti)O3 nanorods via charge screening strategy International conference

    Tomoaki Yamada, Daisuke Ito, Tomas Sluka, Osami Sakata, Hiroshi Funakubo, Takahiro Namazu, Masahito Yoshino, Takanori Nagasaki, Nava Setter

    18th US-Japan Seminar on Dielectric and Piezoelectric Materials  2017.11 

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    Event date: 2017.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Santa Fe, New Mexico  

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  • Preparation of Orientation-controlled (K, Na)NbO3 Thick Films by Hydrothermal Method and Their Properties International conference

    Hiroshi Funakubo, Yoshiharu Ito, Takao Shimizu, Yoshiko Nakamura, Minoru Kurosawa, Hiroshi Uchida, Takanori Kiguchi, Takahisa Shiraishi, Toyohiko J. Konno, Mutsuo Ishikawa

    18th US-Japan Seminar on Dielectric and Piezoelectric Materials  2017.11 

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    Venue:Santa Fe  

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  • 水熱法による酸化物厚膜の成長

    舟窪浩, 伊東良晴, 舘山明紀, 中村美子, 清水荘雄, 黒澤実, 内田寛, 白石 貴久, 木口賢紀, 今野豊彦, 石河睦生

    第37回エレクトロセラミックス研究討論会  2017.10 

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    Event date: 2017.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:川崎市  

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  • (111)正方晶PbZr0.35Ti0.65O3 ナノロッドのサイズ制御による圧電特性の増大

    岡本一輝, 山田智明, 坂田修身, 清水荘雄, 舟窪浩, 吉野正人, 長崎正雅

    第37回エレクトロセラミックス研究討論会  2017.10 

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    Language:Japanese   Presentation type:Poster presentation  

    Venue:川崎市  

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  • HfO2基強誘電体のドメイン構造と電場誘起スイッチング

    清水荘雄, 三村和仙, 木口賢紀, 白石貴久, 赤間章裕, 今野豊彦, 坂田修身, 勝矢良雄, 舟窪浩

    第37回エレクトロセラミックス研究討論会  2017.10 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:川崎市  

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  • HfO2基強誘電体の相安定性とその特性制御

    舟窪浩, 清水荘雄, 三村和仙

    2017年度セラミックス総合研究会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:高知市  

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  • 網羅的ソフトモードフォノン探索によるHfO2薄膜の強誘電性の理論計算

    森分博紀, 小西綾子, 東後篤史, 清水荘雄, 舟窪浩

    日本物理学会2017年秋季大会  2017.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:岩手県盛岡市  

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  • 水熱合成法による配向性チタン酸ジルコン酸鉛膜の作製

    内田寛, 戸次雄一, 中村美子, 舟窪浩

    日本セラミックス協会第30回秋季シンポジウム  2017.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神戸市  

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  • 水熱合成(K,Na)NbO3膜の電気特性および圧電特性の向上

    白石貴久, 伊東良晴, 石河睦生, 内田寛, 木口賢紀, 黒澤実, 舟窪浩, 今野豊彦

    日本セラミックス協会第30回秋季シンポジウム  2017.9 

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    Venue:神戸市  

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  • KNN配向膜の高速成膜法の検討

    伊東良晴, 中村美子, 清水荘雄, 黒澤実, 舟窪浩, 内田寛, 木口賢紀, 白石貴久, 今野豊彦, 石河睦生

    日本セラミックス協会第30回秋季シンポジウム  2017.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神戸大学 六甲台地区  

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  • HfO2基材料における強誘電相発現要因の検討

    清水荘雄, 三村和仙, 木口賢紀, 赤間章裕, 今野豊彦, 坂田修身, 舟窪浩

    日本セラミックス協会第30回秋季シンポジウム  2017.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神戸市  

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  • PbTiO3/SrTiO3エピタキシャル薄膜の界面構造

    木口賢紀, 範滄宇, 赤間章裕, 白石貴久, 舟窪浩, 今野豊彦

    日本セラミックス協会第30回秋季シンポジウム  2017.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:神戸市  

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  • ペロブスカイト型および蛍石型強誘電体薄膜の電気熱量効果

    山田智明, 松尾翔吾, 加茂崇史, 三村和仙, 清水荘雄, 舟窪浩, 吉野正人, 長崎正雅

    2017年強的秩序とその操作に関する第5回研究会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Poster presentation  

    Venue:福岡県宮若市  

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  • 強誘電体材料の比較 –ペロブスカイト基構造 vs. 蛍石基構造-

    舟窪浩, 清水荘雄

    2017年強的秩序とその操作に関する第5回研究会  2017.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡県宮若市  

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  • 溶液法由来HfO2-ZrO2極薄膜の結晶化挙動および特性に関する研究

    内田寛, 中山周平, 舟窪浩

    2017年強的秩序とその操作に関する第5回研究会  2017.9 

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    Language:Japanese   Presentation type:Poster presentation  

    Venue:福岡県宮若市  

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  • 水熱法を用いた(K,Na)NbO3配向体の低温作製とその特性評価

    舟窪浩, 伊東良晴, 舘山明紀, 中村美子, 清水荘雄, 黒澤実, 内田寛, 白石貴久, 木口賢紀, 今野豊彦, 石河睦生

    第78回応用物理学会秋季学術講演会  2018.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡市  

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  • 導電性AFMを用いた局所圧力印加によるV2O3薄膜の絶縁体化

    坂井穣, アリャビエワ ナタリア, ヴォルフマン ジェローム, リムレット パトリス, リュイテール アントワーヌ, 舟窪浩

    第78回応用物理学会秋季学術講演会  2017.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡市  

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  • HfO2-ZrO2エピタキシャル薄膜における斜方晶相の安定性

    木口賢紀, 白石貴久, チェ スジン, 舟窪浩, 今野豊彦

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡市  

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  • ドーパント添加ZrO2エピタキシャル薄膜の結晶構造と電気特性調査

    崔ス珍, 白石貴久, 木口賢紀, 清水荘雄, 舟窪浩, 今野豊彦

    第78回応用物理学会秋季学術講演会  2017.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡市  

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  • エピタキシャルBiFeO3薄膜における電場印加下の格子歪

    中嶋誠二, 藤沢浩訓, 坂田修身, 舟窪浩, 清水荘雄, 一ノ瀬大地, 今井康彦, 清水勝

    第78回応用物理学会秋季学術講演会  2017.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡市  

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  • PL発光強度増大化へのSi(111)基板上β-FeSi2成長の低温度化検討

    秋山賢輔, 松本佳久, 舟窪浩

    第78回応用物理学会秋季学術講演会  2017.9 

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    Event date: 2017.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡市  

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  • HfO2-ZrO2薄膜の結晶化挙動に及ぼす熱処理条件の影響

    中山周平, 舟窪浩, 内田寛

    第78回応用物理学会秋季学術講演会  2017.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡市  

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  • スパッタリング法による{100}配向Y2O3-HfO2強誘電体エピタキシャル薄膜の作製とその評価

    鈴木大生, 三村和仙, 清水荘雄, 内田寛, 舟窪浩

    第78回応用物理学会秋季学術講演会  2017.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡市  

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  • 固相エピタキシー法による強誘電体HfO2基薄膜の作製

    白石貴久, Choi Sujin, 清水荘雄, 舟窪浩, 木口賢紀, 今野豊彦

    第78回応用物理学会秋季学術講演会  2017.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡市  

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  • 強誘電性HfO2薄膜におけるナノスケール分極反転ドット書き込み

    平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄

    第78回応用物理学会秋季学術講演会  2017.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡市  

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  • “化学溶液堆積法によるチタン酸バリウム厚膜の作製とナノシートテンプレートを用いた結晶配向性制御

    村瀬勝裕, 舟窪浩, 内田寛

    第78回応用物理学会秋季学術講演会  2017.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡市  

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  • エピタキシャルPZT膜におけるマルチドメイン構造と面内歪の緩和

    佐藤智也, 一ノ瀬大地, 三村和仙, 清水荘雄, 山田智明, 舟窪浩

    第78回応用物理学会秋季学術講演会  2017.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡市  

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  • Y2O3-HfO2強誘電体の温度安定性

    三村和仙, 清水荘雄, 木口賢紀, 赤間章裕, 今野豊彦, 勝矢良雄, 坂田修身, 舟窪浩

    第78回応用物理学会秋季学術講演会  2017.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡市  

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  • Y添加HfO2エピタキシャル薄膜における負の電気熱量効果

    松尾翔吾, 山田智明, 三村和仙, 清水荘雄, 舟窪浩, 吉野正人, 長崎正雅

    第78回応用物理学会秋季学術講演会  2017.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡市  

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  • Thickness-dependent phase stability of epitaxial ferroelectric HfO2-based films International conference

    Takanori Mimura, Kiriha Katayama, Takao Shimizu, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Osami Sakata, Hiroshi Funakubo

    STAC-10 (The Tenth International Conference on the Science and Technology for Advanced Ceramics)  2017.8 

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    Event date: 2017.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama  

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  • Time Response of Crystal Structure in Tetragonal Pb(Zr,Ti)O3 Films Under an Applied Electric Field International conference

    Tomoya Sato, Daichi Ichinose, Naoya Oshima, Takanori Mimura, Yuichi Nemoto, Takao Shimizu, Yasuhiko Imai, Hiroshi Uchida, Osami Sakata, Hiroshi Funakubo

    STAC-10 (The Tenth International Conference on the Science and Technology for Advanced Ceramics)  2017.8 

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    Event date: 2017.8

    Language:English   Presentation type:Poster presentation  

    Venue:Yokohama  

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  • Domain structure change by applying electric field of dominantly in-plane-polarized Pb(Zr,Ti)O3 thin film International conference

    Daichi Ichinose, Yoshitaka Ehara, Takao Shimizu, Osami Sakata, Tomoaki Yamada, Alexei. Gruverman, Hiroshi Funakubo

    STAC-10 (The Tenth International Conference on the Science and Technology for Advanced Ceramics)  2017.8 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:Yokohama  

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  • 蛍石構造強誘電体の相安定性

    舟窪浩

    新学術領域研究 「ナノ構造情報のフロンティア開拓―材料科学の新展開」 第9回全体会議  2017.7 

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    Event date: 2017.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • On the use of 31Mg (I = 1/2, Tβ = 334 ms) for β-detected NMR studies of condensed matter International conference

    Ryan Mcfadden, Andrew Macfarlane, Aris Chatzichristos, Martin Dehn, FDerek ujimoto, Hiroshi Funakubo, Alexander Gottberg, Taro Hitosugi, Victoria Karner, Robert Kiefl, Mao Kurokawa, Jens Lassen, Phil Levy, Rhohong Li, Matthew Pearson, Gerald Morris, Susumu Shiraki, Monika Stachura, Jun Sugiyama, Daniel Szunyogh

    μSR2017 (The 14th International Conference on Muon Spin Rotation, Relaxation and Resonance)  2017.6 

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    Event date: 2017.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo  

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  • ナノシート界面層上に作製された一軸配向性チタン酸ジルコン酸膜の特性評価

    内田寛, 一ノ瀬大地, 島宏美, 白石貴久, 木口賢紀, 赤間章裕, 西田謙, 今野豊彦, 舟窪浩

    第34回強誘電体応用会議(FMA34)  2017.5 

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    Event date: 2017.5 - 2017.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • (001)エピタキシャル(Ba,Sr)TiO3薄膜における電気熱量効果の電場依存性

    山田智明, 松尾翔吾, 加茂崇史, 舟窪浩, 吉野正人, 長﨑正雅

    第34回強誘電体応用会議(FMA34)  2017.5 

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    Event date: 2017.5 - 2017.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • HfO2基強誘電体エピタキシャル薄膜研究の最近の進展

    清水荘雄, 三村和仙, 舟窪浩

    第34回強誘電体応用会議(FMA34)  2017.5 

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    Event date: 2017.5 - 2017.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • PdO//Pdバッファ層を用いた{110}配向Pb(Zr,Ti)O3薄膜の作製とその物性評価

    内山潔, 大島直也, 江原祥隆, 及川貴弘, 一ノ瀬大地, 田中宏樹, 佐藤智也, 内田寛, 舟窪浩

    第34回強誘電体応用会議(FMA34)  2017.5 

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    Event date: 2017.5 - 2017.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • SNDMによる分極反転過程の動的観察

    平永良臣, 三村和仙, 清水荘雄, 舟窪浩, 長康雄

    第34回強誘電体応用会議(FMA34)  2017.5 

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    Event date: 2017.5 - 2017.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • MOCVD法でSi基板上に作製した面内配向制御して作製したPZT薄膜における電気特性の組成依存性

    岡本庄司, 岡本賢, 横山信太郎, 舟窪浩, 秋山賢輔

    第34回強誘電体応用会議(FMA34)  2017.5 

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    Venue:京都市  

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  • 水熱合成法による方位制御さ れたエピタキシャル(K0.5Na0.5)NbO3厚膜の作製と特性評価

    白石貴久, 石河睦生, 内田寛, 木口賢紀, 黒澤実, 舟窪浩, 今野豊彦

    第34回強誘電体応用会議(FMA34)  2017.5 

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    Event date: 2017.5 - 2017.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • 強誘電体エピタキシャル薄膜の界面構造

    木口賢紀, 範滄宇, 白石貴久, 舟窪浩, 今野豊彦

    第73回日本顕微鏡学会学術講演会  2017.5 

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    Event date: 2017.5 - 2017.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:札幌市  

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  • Domain formation in Pb(Zr,Ti)O3 nanorods driven by depolarizing field International conference

    Tomoaki Yamada, Daisuke Ito, Tomas Sluka, Nava Setter, Osami Sakata, Takahiro Namazu, Hiroshi Funakubo, Masahito Yoshino, Takanori Nagasaki

    ICE2017(8th International Conference on Electroceramics)  2017.5 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya  

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  • Ferroelectric property of one-axis-oriented lead zirconate titanate films under different in-plane stress conditions International conference

    Hiroshi Uchida, Daichi Ichinose, Hiromi Shima, Takahisa Shiraishi, Takanori Kiguchi, Akihiro Akama, Ken Nishida, Toyohiko J. Konno, Hiroshi Funakubo

    ICE2017(8th International Conference on Electroceramics)  2017.5 

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    Event date: 2017.5

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya  

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  • Phase stability and Property design in HfO2-based ferroelectric thin films International conference

    Hiroshi Funakubo, Takao Shimizu, Kiliha Katayama, Takanori Mimura, Takanori Kiguchi, Takahisa Shiraishi, Akihiro Akama, Toyohiko J. Konno, Osami Sakata

    ICE 2017 (8th International Conference on Electroceramics)  2017.5 

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    Event date: 2017.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Nagoya  

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  • Indirect measurements of electrocaloric effect in (001) (Ba, Sr)TiO3 thin films by positive-up-negative-down method International conference

    Shogo Matsuo, Tomoaki Yamada, Takafumi Kamo, Hiroshi Funakubo, Masahito Yoshino, Takanori Nagasaki

    ICE2017(8th International Conference on Electroceramics)  2017.5 

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    Event date: 2017.5

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya  

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  • Domain Structure propagation of tensile-strained {100}-oriented epitaxial tetragonal Pb(Zr, Ti)O3 films International conference

    Hiroshi Funakubo, Daichi Ichinose, Tomoya Sato, Takao Shimizu, Osami Sakata, Tomoaki Yamada

    PACRIM 12 (12th Pacific Rim Conference on Ceramic and Glass Technology)  2017.5 

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    Event date: 2017.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Hawaii  

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  • Manipulation of Domain Structure in {100} Tetragonal Pb(Zr, Ti)O3 Nanorods by Charge Screening International conference

    Tomoaki Yamada, D. Ito, T. Sluka, N. Setter, O. Sakata, T. Namazu, H. Funakubo, M. Yoshino, T. Nagasaki

    2017 Joint IEEE ISAF-IWATMD-PFM Conference  2017.5 

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    Event date: 2017.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Atlanta, GA  

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  • Stability of Ferroelectric Phase in Epitaxial HfO2-based Films International conference

    Takanori Mimura, Kiriha Katayama, Takao Shimizu, Takanori Kiguchi, Akihiko Akama, Toyohiko J. Konno, Osami Sakata, Hiroshi Funakubo

    2017 Joint IEEE ISAF-IWATMD-PFM Conference  2017.5 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:Atlanta, GA  

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  • Ferroelectric Probe Data Storage Using HfO2-Based Thin-Film Recording Media International conference

    Y. Hiranaga, T. Mimura, T. Shimizu, H. Funakubo, Y. Cho

    2017 Joint IEEE ISAF-IWATMD-PFM Conference  2017.5 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:Atlanta, GA  

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  • A Proposal of New Buffer Layer for Depositing (110)-oriented Perovskite Thin Films on (111)Pt/SiO2/Si Substrates International conference

    Kiyoshi Uchiyama, T. Sato, A. Akama, T. Kiguchi, T.J. Konno, N. Oshima, D. Ichinose, H. Funakubo

    2017.5 

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    Venue:Atlanta, GA  

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  • Dynamic Observation of Nanoscale Domain Switching Behaviors in Ferroelectric HfO2 films Using Scanning Nonlinear Dielectric Microscopy International conference

    Y. Hiranaga, T. Mimura, T. Shimizu, H. Funakubo, Y. Cho

    2017 Joint IEEE ISAF-IWATMD-PFM Conference  2017.5 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:Atlanta, GA  

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  • Nonlinear electric field dependence of electrocaloric effect in (001)-epitaxial (Ba, Sr) TiO3 thin films International conference

    S. Matsuo, T. Yamada, T. Kamo, H. Funakubo, M. Yoshino, T. Nagasaki

    2017 Joint IEEE ISAF-IWATMD-PFM Conference  2017.5 

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    Venue:Atlanta, GA  

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  • 蛍石構造酸化物のアニオン制御による“直接特性制御型強誘電体”の創成

    舟窪浩

    新学術領域研究「ナノ構造情報のフロンティア開拓―材料科学の新展開」第4回公開シンポジウム  2017.3 

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    Event date: 2017.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都府  

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  • 水熱法を用いた(K,Na)NbO3配向体の作製とその特性評価

    舟窪浩, 清水荘雄, 黒澤実, 内田寛, 白石貴久, 木口賢紀, 今野豊彦, 石河睦生

    日本セラミックス協会2017年年会  2017.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • PbTiO3エピタキシャル薄膜における90˚ドメイン間の弾性相互作用

    木口賢紀, 範滄宇, 赤間章裕, 白石貴久, 舟窪浩, 今野豊彦

    日本セラミックス協会2017年年会  2017.3 

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    Venue:東京都  

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  • 電界印加下における正方晶Pb(Zr,Ti)O3膜の結晶構造の時間応答

    佐藤智也, 一ノ瀬大地, 三村和仙, 根本祐一, 清水荘雄, 今井康彦, 内田寛, 坂田修身, 舟窪浩

    第64回応用物理学会春季学術講演会  2017.3 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:横浜市  

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  • Positive-up-negative-down法による(Ba,Sr)TiO3薄膜の電気熱量効果の間接的評価

    山田智明, 松尾翔吾, 加茂崇史, 舟窪浩, 吉野正人, 長﨑正雅

    第64回応用物理学会春季学術講演会  2017.3 

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    Venue:横浜市  

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  • 走査型非線形誘電率顕微鏡を用いたナノスケール分極反転過程の動的観察

    平永良臣, 三村和仙, 清水 荘雄, 舟窪浩, 長康雄

    第64回応用物理学会春季学術講演会  2017.3 

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    Venue:横浜市  

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  • β-FeSi2薄膜のPL発光特性に及ぼす成長温度の影響

    秋山賢輔, 松本佳久, 舟窪 浩

    第64回応用物理学会春季学術講演会  2017.3 

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    Venue:横浜市  

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  • スパッタリング法によるY2O3-HfO2強誘電体エピタキシャル薄膜作製とその評価

    鈴木大生, 三村和仙, 清水荘雄, 内田寛, 舟窪浩

    第64回応用物理学会春季学術講演会  2017.3 

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    Venue:横浜市  

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  • エピタキシャルFe:HfO2薄膜の作製と特性評価

    白石貴久, Choi Sujin, 清水 荘雄, 舟窪 浩, 木口賢紀, 今野豊彦

    第64回応用物理学会春季学術講演会  2017.3 

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    Venue:横浜市  

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  • エピタキシャルHfO2基膜における強誘電相の安定性 -RE2O3-HfO2 vs ZrO2-HfO2-

    三村和仙, 片山きりは, 清水荘雄, 木口賢紀, 赤間章裕, 今野豊彦, 坂田修身, 舟窪浩

    第64回応用物理学会春季学術講演会  2017.3 

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    Venue:横浜市  

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  • Growth of epitaxial orthorhomibic doped HfO2 thin films International conference

    T. Shimizu, H. Funakubo

    Novel High k Application Workshop 2017  2017.3 

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    Venue:Dresden  

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  • Y2O3-HfO2エピタキシャル薄膜の構成相の決定因子

    鈴木大生, 三村和仙, 清水荘雄, 内田寛, 舟窪浩

    第55回セラミックス協会基礎科学討論会  2017.1 

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    Event date: 2017.1

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    Venue:岡山市  

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  • PLD法による正方晶(Bi, K)TiO3エピタキシャル膜の作製とポストアニールが強誘電性に与える影響

    根本祐一, 佐藤智也, 一ノ瀬大地, 清水荘雄, 内田寛, 木口賢紀, 佐藤祐介, 山岡和希子, 舟窪浩

    第55回セラミックス協会基礎科学討論会  2017.1 

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    Event date: 2017.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:岡山市  

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  • Positive-up-negative-down 法を用いた強誘電体薄膜の電気熱量効果の間接的評価

    松尾翔吾, 山田智明, 加茂崇史, 舟窪浩, 吉野正人, 長﨑正雅

    第48回日本原子力学会中部支部研究発表会  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • Y添加HfO2薄膜における強誘電ドメイン反転のSNDM観察

    平永良臣, 長康雄, 三村和仙, 清水荘雄, 舟窪浩

    電子情報通信学会 磁気記録・情報ストレージ研究会(MR)  2016.12 

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    Event date: 2016.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:松山市  

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  • Chemical Solution Deposition of Hafnia-Zirconia Ultrathin Films for Ferroelectric Capacitor International conference

    Hiroshi Uchida, Syuhei Nakayama, Hiroaki Kawashima, Takahisa Shiraishi, Takao Shimizu, Hiroshi Funakubo

    AMEC 2016 (The 10th Asian Meeting on Electroceramics)  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Poster presentation  

    Venue:Taipei  

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  • Structural and piezoelectric properties in (111) tetragonal/rhombohedral Pb(Zr,Ti)O3 artificial superlattice thin films International conference

    Y. Ebihara, T. Yamada, O. Sakata, T. Kiguchi, H. Morioka, T. Shimizu, H. Funakubo, T. J. Konno, M. Yoshino, T. Nagasaki

    AMEC 2016 (The 10th Asian Meeting on Electroceramics)  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Poster presentation  

    Venue:Taipei  

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  • Domain Pattern Control in Pb(Zr,Ti)O3 Nanorods by Charge Screening International conference

    T. Yamada, D. Ito, T. Sluka, N. Setter, O. Sakata, T. Namazu, H. Funakubo, M. Yoshino, T. Nagasaki

    AMEC 2016 (The 10th Asian Meeting on Electroceramics)  2016.12 

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    Event date: 2016.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Taipei  

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  • Orientation Controlled HfO2-Based Ferroelectric Films Prepared by Solid Phase Local Epitaxial Technique for High Density Memory Applications International conference

    Hiroshi Funakubo, Takanori Mimura, Takao Shimizu, Kiliha Katayama, Hiroshi Uchida, Takanori Kiguchi, Akihiro Akama, Toyohiko Konno, Osami Sakata

    2016 MRS Fall Meeting & Exhibit  2016.11 

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    Event date: 2016.11 - 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston  

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  • Synthesis and Photocatalytic Properties of Iron-Disilicide/SiC Composite Powder International conference

    Kensuke Akiyama, Yuu Motoizumi, Tetsuya Okuda, Hiroshi Funakubo, Hiroshi Irie, Yoshihisa Matsumoto

    2016 MRS Fall Meeting & Exhibit  2016.11 

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    Event date: 2016.11 - 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston  

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  • nverse-Magnetostriction-Induced Switching Current Reduction Technique for Spin-Transfer Torque MTJs and Its Low-Power MRAM Applications International conference

    Yota Takamura, Yusuke Shuto, Shu'uichiro Yamamoto, Hiroshi Funakubo, Minoru Kurosawa, Shigeki Nakagawa, Satoshi Sugahara

    2016 MRS Fall Meeting & Exhibit  2016.11 

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    Event date: 2016.11 - 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston  

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  • Interfacial Dislocations in (111) Oriented (Ba0.7Sr0.3)TiO3 Films on SrTiO3 Single Crystal International conference

    Xuan Shen, Tomoaki Yamada, Ruoqian Lin, Hiroshi Funakubo, Di Wu, Huolin Xin, Dong Su

    2016 MRS Fall Meeting & Exhibit  2016.11 

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    Event date: 2016.11 - 2016.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston  

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  • Epitaxial Growth of Ferroelectric HfO2-based films International conference

    Takao Shimizu, Kiliha Katayama, Takanori Mimura, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Osami Sakata, Hiroshi Funakubo

    ICTAM-AFM10 (International Conference on Technologically Advanced Materials & Asian Meeting on Ferroelectricity)  2016.11 

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    Event date: 2016.11

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:New Delhi  

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  • High Quality Deposition of Proton Conductive Oxide Thin Films and its Application to Fuel Cells International conference

    Kiyoshi Uchiyama, Tomoya Sato, Hiroki Tanaka, Tetsuro Kariya, Hiroshi Funakubo

    ICTAM-AMF10 (International Conference on Technologically Advanced Materials & Asian Meeting on Ferroelectricity)  2016.11 

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    Event date: 2016.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:New Delhi  

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  • 正方晶PZT薄膜のドメイン構造の配向及び歪制御

    一ノ瀬大地, 中島祟明, 江原祥隆, 及川貴弘, 清水荘雄, 坂田修身, 山田智明, 舟窪浩

    第36回エレクトロセラミックス研究討論会  2016.10 

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    Event date: 2016.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:川崎市  

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  • ナノシート界面層上におけるPZT膜の一軸配向成長

    宮崎竜斗, 一ノ瀬大地, 金鎭雄, 島 宏美, 木口賢紀, 赤間章裕, 西田謙, 今野豊彦, 舟窪浩, 内田寛

    第36回エレクトロセラミックス研究討論会  2016.10 

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    Event date: 2016.10

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:川崎市  

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  • ピタキシャル(Ba, Sr)TiO3薄膜の残留歪み及び印加電界が電気熱量効果に与える影響

    松尾翔吾, 山田智明, 加茂崇史, 舟窪浩, 吉野正人, 長埼正雅

    第36回エレクトロセラミックス研究討論会  2016.10 

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    Event date: 2016.10

    Language:Japanese   Presentation type:Poster presentation  

    Venue:川崎市  

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  • マイクロラマン分光法を用いたZnO単結晶及び粉末の酸素欠陥評価

    福島浩晃, 内田寛, 舟窪浩, 河東田隆, 西田謙

    第36回エレクトロセラミックス研究討論会  2016.10 

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    Event date: 2016.10

    Language:Japanese   Presentation type:Poster presentation  

    Venue:川崎市  

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  • Solid solution films in BaTiO3-Bi(Mg1/2Ti1/2)O3 system with stable temperature coefficient of capacitance International conference

    H. Uchida, S. Moki, K. Murase, J. Kimura, H. Funakubo

    JCFMA8 (The 8th Japan-China Symposium on Ferroelectric Materials and Their Applications)  2016.9 

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    Event date: 2016.9 - 2016.10

    Language:English   Presentation type:Poster presentation  

    Venue:Tsukuba  

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  • High temperature dielectric properties of orientation controlled bismuth layer-structured dielectric films International conference

    H. Funakubo, J. Kimura, I. Takuwa, M. Matsushima, T. Shimizu, H. Uchida

    JCFMA8  2016.9 

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    Event date: 2016.9 - 2016.10

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Tsukuba  

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  • 薄膜電解質を応用した燃料電池の開発

    内山潔, 舟窪浩

    一般社団法人日本鉄鋼協会第172回秋季講演大会  2016.9 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:豊中市  

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  • HfO2基強誘電体の結晶構造と特性の熱処理温度依存性

    三村和仙, 清水荘雄, 内田寛, 木口賢紀, 赤間章裕, 今野豊彦, 坂田修身, 舟窪 浩

    第77回応用物理学会秋季学術講演会  2016.9 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟市  

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  • ピエゾ素子上に転写したV2O3薄膜の歪み誘起抵抗変調

    坂井穣, ネグレスク・ベアトリス, バヴァンコッフ・マキシム, リムレット・パトリス, ヴォルフマン・ジェローム, 舟窪浩

    第77回応用物理学会秋季学術講演会  2016.9 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟市  

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  • 強誘電体Pb(Zr,Ti)O3ナノロッドの電荷遮蔽によるドメイン制御

    山田智明, 伊藤大介, Sluka Tomas, Setter Nava, 坂田修身, 生津資大, 舟窪浩, 吉野正人, 長崎正雅

    第77回応用物理学会秋季学術講演会  2016.9 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟市  

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  • β-FeSi2薄膜の低温でのフォトルミネッセンス発光

    秋山賢輔, 松本佳久, 舟窪浩

    第77回応用物理学会秋季学術講演会  2016.9 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟市  

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  • 熱処理がMg2Si薄膜の伝導型に与える影響

    黒川満央, 上原睦雄, 清水荘雄, 秋山賢輔, 松島正明, 内田寛, 木村好里, 舟窪浩

    第77回応用物理学会秋季学術講演会  2016.9 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟市  

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  • 面内分極軸優先配向Pb(Zr,Ti)O3薄膜のドメイン構造

    一ノ瀬大地, 江原祥隆, 清水荘雄, 坂田修身, 山田智明, Alexei Gruverman, 舟窪浩

    第77回応用物理学会秋季学術講演会  2016.9 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟市  

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  • PLD法による配向制御したエピタキシャル(Bi,K)TiO3膜の作製

    根本祐一, 一ノ瀬 大地, 清水荘雄, 内田寛, 佐藤祐介, 山岡和希子, 舟窪浩

    第77回応用物理学会秋季学術講演会  2016.9 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟市  

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  • β-FeSi2/SiC複合粒子の作製と光触媒効果による水からの水素生成

    秋山賢輔, 本泉佑, 奥田徹也, 舟窪浩, 入江寛, 松本佳久

    第77回応用物理学会秋季学術講演会  2016.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟市  

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  • 電界印加によるYO1.5-HfO2基薄膜の結晶構造変化

    清水荘雄, 三村和仙, 片山きりは, 木口賢紀, 赤間章裕, 今野豊彦, 坂田修身, 舟窪浩

    第77回応用物理学会秋季学術講演会  2016.9 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:新潟市  

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  • 強誘電体(Ba, Sr)TiO₃薄膜の電気熱量効果の電界依存性

    松尾翔吾, 山田智明, 加茂嵩史, 舟窪浩, 吉野正人, 長﨑正雅

    日本セラミックス協会第29回秋季シンポジウム  2016.9 

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    Event date: 2016.9

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  • エピタキシャルおよび配向性YドープHfO₂薄膜の強誘電性

    清水荘雄, 片山きりは, 三村和仙, 木口賢紀, 白石貴久, 赤間章裕, 今野豊彦, 坂田修身, 舟窪浩

    日本セラミックス協会第29回秋季シンポジウム  2016.9 

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  • 高温使用に対応した新規誘電体材料の探索

    舟窪浩, 木村純一, 清水荘雄

    日本セラミックス協会第29回秋季シンポジウム  2016.9 

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    Event date: 2016.9

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:広島県  

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  • Fe 添加されたZrO₂超薄膜の結晶構造調査

    崔瓍珍, 白石貴久, 清水荘雄, 舟窪浩, 木口賢紀, 今野豊彦

    日本セラミックス協会第29回秋季シンポジウム  2016.9 

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  • Metal-Insulator Transition Evidenced By Atomic Force Microscopy In V2O3 Thin Films International conference

    Natalia Alyabyeva, Joe Sakai, Jerome Wolfman, Patrice Limelette, Hiroshi Funakubo, Antoine Ruyter

    ECOSS 32 (the 32nd European Conference On Surface Science)  2016.8 

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    Event date: 2016.8 - 2016.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Grenoble  

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  • Fundamental Understanding of Ferroelectricity in HfO2-based Ferroelectrics International conference

    Hiroshi Funakubo, Takao Shimizu, Kiliha Katayama, Takanori Kiguchi, Akihiro Akama, Toyohiko J Konno, Osami Sakata

    ISAF/ECAPD/PFM 2016  2016.8 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Darmstadt  

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  • Ferroelectric nanodomain observation in yttrium-doped HfO2 using scanning nonlinear dielectric microscopy International conference

    Z. Chen, Y. Hiranaga, T. Shimizu, K. Katayama, T. Mimura, H. Funakubo, Y. Cho

    ISAF/ECAPD/PFM 2016 (2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Applications of Polar Dielectrics & Workshop on Piezoresponse Force Microscopy)  2016.8 

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    Event date: 2016.8

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    Venue:Darmstadt  

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  • Formation process of epitaxial tetragonal Pb(Zr, Ti)O3 thin film International conference

    Daichi Ichinose, Takaaki Nakashima, Yoshitaka Ehara, Takao Shimizu, Osami Sakata, Tomoaki Yamada, Hiroshi Funakubo

    ISAF/ECAPD/PFM 2016 (2016 Joint IEEE International Symposium on the Applications of Ferroelectrics, European Conference on Applications of Polar Dielectrics & Workshop on Piezoresponse Force Microscopy)  2016.8 

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    Event date: 2016.8

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    Venue:Darmstadt  

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  • Domain Formation of Epitaxial Tetragonal Pb(Zr, Ti)O3 Thin Films Grown Under Tensile Strain International conference

    Hiroshi Funakubo, Daichi Ichinose, Takaaki Nakashima, Yoshitaka Ehara, Takao Shimizu, Osami Sakata, Tomoaki Yamada

    TOPO 2016  2016.8 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Dresden  

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  • Growth of {110}-oriented Perovskite-type Proton Conductive Oxide Thin Films by RF Magnetron Sputtering Method International conference

    T. Sato, T. Kiguchi, T.J. Konno, J. Kimura, D. Ichinose, T. Mimura, H. Funakubo, K. Uchiyama

    ICCGE-18 (The 18th International Conference on Crystal Growth and Epitaxy)  2016.8 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Nagoya  

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  • Epitaxial Growth of Iron Disilicide Thin Film on 4H-SiC International conference

    K. Akiyama, T. Kadowaki, Y. Hirabayashi, Y. Matsumoto, H. Funakubo

    ICCGE-18 (The 18th International Conference on Crystal Growth and Epitaxy)  2016.8 

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    Event date: 2016.8

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya  

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  • Ferroelectricity in epitaxial and well-oriented texutured Y-doped HfO2 films International conference

    Takao Shimizu, Kiliha Katayama, Takanori Mimura, Takanori Kiguchi, Takahisa Shiraishi, Akihiro Akama, Toyohiko J. Konno, Osami Sakata, Hiroshi Funakubo

    KJCFE 11th (11th Korea-Japan Conference on Ferroelectrics)  2016.8 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (invited, special)  

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  • Manipulation of Domain Structure in Pb(Zr,Ti)O3 Nanorods by Charge Screening International conference

    Tomoaki Yamada, Daisuke Ito, Osami Sakata, Hiroshi Funakubo, Takahiro Namazu, Masahito Yoshino, Takanori Nagasaki

    KJCFE 11th (11th Korea-Japan Conference on Ferroelectrics)  2016.8 

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    Event date: 2016.8

    Language:English   Presentation type:Oral presentation (invited, special)  

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  • ポストアニール法による配向制御したHfO2基強誘電体の作成とその特性評価

    三村和仙, 舟窪浩

    新学術領域研究「ナノ構造情報のフロンティア開拓―材料科学の新展開」第4回若手の会  2016.7 

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    Event date: 2016.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:茨城県  

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  • Preparation of Mg2Si Thin Films on Various Kinds of Substrates and their Thermoelectric Properties International conference

    Mao Kurokawa, Mutsuo Uehara, Daichi Ichinose, Takao Shimizu, Kensuke Akiyama, Masaaki Matsushima, Hiroshi Uchida, Yoshisato Kimura, Hiroshi Funakubo

    APAC-SILICIDE 2016 (Asia-Pacific Conference on Semiconducting Silicides and Related Materials)  2016.7 

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    Event date: 2016.7

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Fukuoka  

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  • 蛍石構造酸化物のアニオン制御による“直接特性制御型強誘電体”の創成

    舟窪浩

    新学術領域研究「ナノ構造情報のフロンティア開拓―材料科学の新展開」第7回全体会議  2016.7 

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    Event date: 2016.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都府  

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  • Optimization of Deposition Conditions of Y-doped SrZrO3 Thin Films Fabricated by Pulsed Laser Deposition Method International conference

    Kiyoshi Uchiyama, Hiroki Tanaka, Takahiro Oikawa, Hiroshi Funakubo

    IUMRS-ICEM2016 (International Union of Materials Research Societies - International Conference on Electronic Materials)  2016.7 

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    Event date: 2016.7

    Language:English   Presentation type:Oral presentation (general)  

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  • Probing of Oxygen Vacancies in BaTiO3 Powder and Single Crystal by Micro-Raman Scattering International conference

    H. Fukushima, H. Oka, H. Funakubo, H. Uchida, H. Moriwake, H. Shima, K. Nishida

    MDA 2016 (1st International Conference on Materials Design and Applisations)  2016.6 

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    Event date: 2016.6 - 2016.7

    Language:English   Presentation type:Poster presentation  

    Venue:Porto  

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  • 配向制御したHfO2基強誘電体薄膜の作製と特性評価

    舟窪 浩, 清水荘雄, 片山きりは, 三村和仙

    応用物理学会シリコンテクノロジー分科会 第192回研究集会  2016.6 

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    Event date: 2016.6

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • Growth of orientation-controlled ferroelectric HfO2 thin films by solid phase crystallization and their characterization International conference

    Takanori Mimura, Kiriha Katayama, Takao Shimizu, Hiroshi Uchida, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Osami Sakata, Hiroshi Funakubo

    2016 Joint RCBJSF-IWRF Conference  2016.6 

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    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Shimane  

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  • Preparation of fluorite-structured ferroelectric thin films and their characterization International conference

    Takao Shimizu, Kiliha Katayama, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Osami Sakata, Hiroshi Funakubo

    2016 Joint RCBJSF-IWRF Conference  2016.6 

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    Event date: 2016.6

    Language:English   Presentation type:Poster presentation  

    Venue:Shimane  

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  • Impact of Incubation Time on Deposition of Flat Ru Thin Film on Various Kinds of Substrates at Different Temperature International conference

    Hirokazu Chiba, Masaki Hirano, Kazuhisa Kawano, Noriaki Oshima, Hiroshi Funakubo

    ISCSI-Ⅶ/ISTDM 2016  2016.6 

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    Event date: 2016.6

    Language:English   Presentation type:Poster presentation  

    Venue:Nagoya  

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  • Growth of Orientation-Controlled Ferroelectric HfO2 Thin Films for Next Generation Ferroelectric Devices International conference

    Hiroshi Funakubo, Takanori Mimura, Kiriha Katayama, Takao Shimizu, Hiroshi Uchida, Takanori Kiguchi, Akihiro Akama, Toyohiko Konno, Osami Sakata

    ISCSI-Ⅶ/ISTDM 2016  2016.6 

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    Event date: 2016.6

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Nagoya  

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  • 正方晶/菱面体晶Pb(ZrxTi1-x)O3人工超格子界面における電荷補償が圧電特性に与える影響

    山田智明, 海老原洋平, 坂田修身, 森岡 仁, 木口賢紀, 清水荘雄, 舟窪 浩, 吉野正人, 長崎正雅

    第33回強誘電体応用会議(FMA 33)  2016.5 

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    Event date: 2016.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都府  

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  • Pt/Si基板上への{110}高配向ぺロブスカイト薄膜の直接成膜

    内山潔, 佐藤智也, 一ノ瀬大地, 木村純一, 井上貴明, 三村和仙, 舟窪浩

    第33回強誘電体応用会議(FMA33)  2016.5 

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    Event date: 2016.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都府  

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  • Zr/(Zr+Ti)比によって歪量を連続的に制御して作成したPb(Zr,Ti)O3 エピタキシャル薄膜の構造変化

    一ノ瀬大地, 中島祟明, 江原祥隆, 及川貴弘, 清水荘雄, 坂田修身, 山田智明, 舟窪 浩

    第33回強誘電体応用会議(FMA 33)  2016.5 

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    Event date: 2016.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都府  

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  • Pb(Zr,Ti)O3エピタキシャル膜におけるラマンスペクトルの角度依存性

    福島浩晃, 舟窪 浩, 内田 寛, 島 宏美, 西田 謙

    第33回強誘電体応用会議(FMA 33)  2016.5 

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    Event date: 2016.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都府  

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  • PLD法による正方晶(Bi,K)TiO3エピタキシャル膜作製と圧電特性評価

    根本 祐一, 一ノ瀬 大地, 清水 荘雄, 内田 寛, 舟窪 浩

    第33回強誘電体応用会議(FMA 33)  2016.5 

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    Event date: 2016.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都府  

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  • Si基板およびSrTiO3基板上エピタキシャルPZT薄膜の電気特性および結晶構造の組成依存性

    岡本 庄司, 岡本 賢, 横山 慎太郎, 舟窪 浩, 秋山 賢輔

    第33回強誘電体応用会議(FMA 33)  2016.5 

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    Event date: 2016.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都府  

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  • 電場印加下のエピタキシャルBiFeO3薄膜における格子歪のその場観察

    中嶋誠二, 坂田修身, 舟窪 浩, 高山幸太, 藤沢浩訓, 清水荘雄, 一ノ瀬大地, 今井康彦, 清水 勝

    第33回強誘電体応用会議(FMA 33)  2016.5 

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    Event date: 2016.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都府  

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  • 金属酸化物ナノシート界面層を利用したチタン酸バリウム薄膜の結晶配向性制御

    大井智雄, 野口慶人, 茂木翔太, 金 鎭雄, 島 宏美, 西田 謙, 木口賢紀, 赤間章裕, 今野豊彦, 舟窪 浩, 内田 寛

    第33回強誘電体応用会議(FMA 33)  2016.5 

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    Event date: 2016.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都府  

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  • Fabrication of Flexible Piezoelectric Devices using Hydrothermal Method International conference

    T. Shiraishi, M. Kurosawa, H. Uchida, Y. Suzuki, T. Kobayashi, H. Funakubo, T. J. Konno

    SMS 2016 (Summit of Materials Science, 100th Anniversary of Institute for Materials Research)  2016.5 

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    Event date: 2016.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sendai  

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  • Piezoelectric Materials for MEMS Application International conference

    HIROSHI FUNAKUBO

    MEMS Engineer Forum  2016.5 

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    Event date: 2016.5

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Ryogoku  

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  • β-FeSi2薄膜のPL発光特性に及ぼすアニール処理の影響

    秋山賢輔, 松本佳久, 木口賢紀, 舟窪 浩

    第63回応用物理学会春季学術講演会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 走査型非線形誘電率顕微鏡における強誘電性Y:HfO2薄膜のドメイン反転

    陳 舟, 平永良臣, 清水荘雄, 片山きりは, 三村和仙, 舟窪 浩, 長 康雄

    第63回応用物理学会春季学術講演会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 固相成長による配向制御したHfO2基強誘電体薄膜の作製と特性評価

    三村和仙, 片山きりは, 清水荘雄, 内田 寛, 木口賢紀, 赤間章裕, 今野豊彦, 坂田修身, 舟窪 浩

    第63回応用物理学会春季学術講演会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • PLD法による正方晶(Bi,K)TiO3エピタキシャル膜作製と圧電特性評価

    根本祐一, 一ノ瀬大地, 清水荘雄, 内田 寛, 舟窪 浩

    第63回応用物理学会春季学術講演会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 方晶/菱面体晶Pb(ZrxTi1-x)O3人工超格子薄膜における圧電応答の層厚依存性

    山田智明, 海老原洋平, 坂田修身, 森岡 仁, 木口賢紀, 清水荘雄, 舟窪 浩, 吉野正人, 長崎正雅

    第63回応用物理学会春季学術講演会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 界印加による面内分極軸優先配向Pb(Zr,Ti)O3薄膜のドメイン構造変化

    一ノ瀬大地, 江原祥隆, 清水荘雄, 坂田修身, 山田智明, 舟窪 浩

    第63回応用物理学会春季学術講演会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • {110}一軸配向ペロブスカイト型酸化物薄膜の作製と結晶構造解析

    佐藤智也, 木村純一, 一ノ瀬大地, 三村和仙, 舟窪 浩, 内山 潔

    第63回応用物理学会春季学術講演会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • ラマン分光法を用いたBaTiO3の酸素欠陥の評価

    福島浩晃, 岡 廣隆, 神津知己, 舟窪 浩, 内田 寛, 森分博紀, 島 宏美, 西田 謙

    第63回応用物理学会春季学術講演会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • Mg2Si薄膜の熱電特性に及ぼす歪みの影響

    黒川満央, 上原睦雄, 一ノ瀬大地, 清水荘雄, 秋山賢輔, 松島正明, 内田 寛, 舟窪浩

    第63回応用物理学会春季学術講演会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • ナノシート界面層を利用した配向性PZT厚膜の作製

    宮崎竜斗, 一ノ瀬大地, 金 鎭雄, 島 宏美, 赤間章裕, 木口賢紀, 西田 謙, 今野豊彦, 舟窪 浩, 内田 寛

    第63回応用物理学会春季学術講演会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 化学溶液堆積法で作製された配向性チタン酸バリウム薄膜の結晶化挙動に及ぼす熱処理プロセスの影響

    大井智雄, 野口慶人, 茂木翔太, 内田寛, 金鎭雄, 島宏美, 西田謙, 木口賢紀, 赤間章裕, 今野豊彦, 舟窪浩

    日本セラミックス協会 2016年年会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東京都  

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  • 配向制御したHfO2基強誘電体の作製とその強誘電特性評価

    舟窪浩, 清水荘雄, 片山きりは, 三村和仙, 木口賢紀, 赤間章裕, 今野豊彦, 内田寛

    日本セラミックス協会 2016年年会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • HfO2薄膜における強誘電相転移に関する第一原理計算

    森分博紀, 小西綾子, 桑原彰秀, 東後篤史, 清水荘雄, 舟窪浩

    日本セラミックス協会 2016年年会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 固相エピタキシー法による斜方晶相HfO2-ZrO2固溶体薄膜の作製

    木口賢紀, 中村奨梧, 範滄宇, 白石貴久, 今野豊彦, 清水荘雄, 舟窪浩

    日本セラミックス協会 2016年年会  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 蛍石構造を有する薄膜の強誘電性発現機構の解明と新規強誘電体物質群の創出

    舟窪 浩

    新学術領域研究「ナノ構造情報のフロンティア開拓―材料科学の新展開」第3回公開シンポジウム  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 酸化物薄膜の構造解析~HfO2基極薄膜の斜方晶相について~

    白石貴久, 中村奨梧, 範滄宇, 片山きりは, 清水荘雄, 舟窪浩, 木口賢紀, 今野豊彦

    共用・計測 合同シンポジウム2016 微細構造解析プラットフォーム・ワークショップ NIMS先端計測シンポジウム2016 合同シンポジウム  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:つくば市  

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  • 強誘電性Y:HfO2薄膜におけるナノスケールドメイン反転

    陳舟, 平永良臣, 清水荘雄, 片山きりは, 三村和仙, 舟窪浩, 長康雄

    電子情報通信学会研究会  2016 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • Growth and photoluminescence properties of Au- or N-doped iron disilicide International conference

    Kensuke Akiyama, Hiroshi Funakubo

    2016 SPIE. PHORONICS WEST.  2016.2 

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    Event date: 2016.2

    Language:English   Presentation type:Oral presentation (general)  

    Venue:San Francisco  

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  • High temperature dielectric properties of c-axis oriented bismuth layer-structured dielectric films prepared on Si and Glass substrates using nanosheets buffer layer International conference

    H. Funakubo, J. Kimura, I. Takuwa, M. Matsushima, T. Shimizu, H. Uchida, T. Shibata, M. Osada, T. Sasaki

    EMA 2016  2016.1 

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    Event date: 2016.1

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Orlando, Florida  

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  • Thermoelectric characterization of sputtered Ca-Mg-Si films International conference

    M. Uehara, M. Kurokawa, K. Akiyama, T. Shimizu, M. Matsushima, H. Uchida, Y. Kimura, H. Funakubo

    EMA 2016  2016.1 

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    Event date: 2016.1

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Orlando, Florida  

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  • 固相成長法を用いた強誘電体HfO2 基薄膜のエピタキシャル成長と特性評価

    三村和仙, 片山きりは, 清水荘雄, 舟窪浩, 内田寛, 木口賢紀, 赤間章裕, 今野豊彦

    第54回セラミックス基礎科学討論会  2016.1 

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    Event date: 2016.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀市  

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  • 正方晶/菱面体晶Pb(Zr,Ti)O3 人工超格子薄膜の構造及び圧電特性の層厚依存性

    海老原洋平, 山田智明, 坂田修身, 森岡仁, 木口賢紀, 今井康彦, 清水荘雄, 舟窪浩, 吉野正人, 長﨑正雅

    第54回セラミックス基礎科学討論会  2016.1 

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    Event date: 2016.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀市  

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  • PLD 法による正方晶(Bi,,K)TiO3 エピタキシャル膜作製と圧電特性評価

    根本祐一, 一ノ瀬大地, 清水荘雄, 内田寛, 舟窪浩

    第54回セラミックス基礎科学討論会  2016.1 

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    Event date: 2016.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀市  

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  • スパッタリング法によるCa-Mg-Si 基膜熱電材料の特性評価

    上原睦雄, 黒川満央, 秋山賢輔, 清水荘雄, 松島正明, 内田寛, 木村好里, 舟窪浩

    第54回セラミックス基礎科学討論会  2016.1 

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    Event date: 2016.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀市  

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  • Mg2Si 薄膜の熱電特性に及ぼす種々の因子の影響

    黒川満央, 上原睦雄, 秋山賢輔, 松島正明, 内田寛, 木村好里, 舟窪浩

    第54回セラミックス基礎科学討論会  2016.1 

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    Event date: 2016.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀市  

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  • HfO2 基エピタキシャル薄膜における強誘電相の安定化

    片山きりは, 清水荘雄, 木口賢紀, 赤間章裕, 今野豊彦, 内田寛, 舟窪浩

    第54回セラミックス基礎科学討論会  2016.1 

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    Event date: 2016.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:佐賀市  

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  • Domain structure and piezoelectric response of self-assembled tetragonal Pb(Zr,Ti)O3 Nanorods International conference

    Tomoaki Yamada, Daisuke Ito, Osami Sakata, Takanori Kiguchi, Takahisa Shiraishi, Takao Shimizu, MasahitoYoshino, Hiroshi Funakubo, Takanori Nagasaki

    Pacifichem 2015  2015.12 

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    Event date: 2015.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Honolulu, Hawaii  

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  • Ferroelectricity in HfO2-based epitaxial thin film International conference

    Takao Shimizu, Kiriha Katayama, Takahisa Shiraishi, Takanori Kiguchi, Shogo Nakamura, Toyohiko Konno, Hiroshi Funakubo

    Pacifichem 2015  2015.12 

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    Event date: 2015.12

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Honolulu, Hawaii  

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  • High frequency tunable property of Ba(ZrxTi1-x)O3 films grown by reactive sputtering International conference

    Jinwoong Kim, Hiroshi Funakubo, Tomoaki Yamada, Ken Nishida

    Pacifichem 2015  2015.12 

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    Event date: 2015.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Honolulu, Hawaii  

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  • Low Temperature Deposition of Epitaxial (K,Na)NbO3 Films using Hydrothermal Method International conference

    Takahisa Shiraishi, Hiro Einishi, Minoru Kurosawa, Hiroshi Uchida, Nobuhiro Kumada, Takanori Kiguchi, Hiroshi Funakubo

    EMN 3CG 2015  2015.12 

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    Event date: 2015.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kowloon, Hong Kong  

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  • 正方晶/菱面体晶P b(Zr,Ti)O3人工超格子薄膜の作製と圧電特性の評価

    海老原洋平, 山田智明, 坂田修身, 森岡仁, 木口賢紀, 今井康彦, 清水荘雄, 舟窪浩, 吉野正人, 長﨑正雅

    平成27年度日本セラミックス協会東海支部学術研究発表会  2015.12 

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    Event date: 2015.12

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • Lattice Strain and Resistance Switching Properties of Pulsed Laser-Deposited V2O3 Thin Films International conference

    Joe Sakai, Antoine Ruyter, Beatrice Negulescu, Patrice Limelette, Hiroshi Funakubo

    2015 MRS Fall Meeting & Exhbit  2015.12 

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    Event date: 2015.11 - 2015.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston  

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  • Effect of Stress on Ferroelectricity of (Hf0.5Zr0.5)O2 Thin Films International conference

    Hiroshi Funakubo, Takahisa Shiraishi, Tatsuhiko Yokouchi, Takahiro Oikawa, Hiroshi Uchida

    2015 MRS Fall Meeting & Exhbit  2015.11 

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    Event date: 2015.11 - 2015.12

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Boston, MA  

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  • Growth of Epitaxial Orthorhombic YO1.5-Substituted HfO2 Thin Film International conference

    Takao Shimizu, Kiliha Katayama, Takanori Kiguchi, Akihiro Akama, Shougo Nakamura, Takahisa Shiraishi, Toyohiko J. Konno, Osami Sakata, Hiroshi Funakubo

    17th US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2015.11 

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    Event date: 2015.11

    Language:English   Presentation type:Poster presentation  

    Venue:Matsumoto  

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  • Growth and Structural Analysis of Epitaxial Orthorhombic YO1.5-HfO2 Thin Films International conference

    Kiliha Katayama, Takao Shimizu, Osami Sakata, Takanori Kiguchi, Akihiro Akama, Toyohiko J. Konno, Syogo Nakamura, Hiroshi Uchida, Hiroshi Funakubo

    17th US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2015.11 

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    Event date: 2015.11

    Language:English   Presentation type:Poster presentation  

    Venue:Matsumoto  

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  • Preferential Crystal Growth of BiFeO3-Based Thin Films Using Metal-Oxide Nanosheet Templates International conference

    Hiroshi Uchida, Kohei Nagasaka, Jin Woong Kim, Hiromi Shima, Akihiro Akama, Takanori Kiguchi, Ken Nishida, Toyohiko J. Konno, Hiroshi Funakubo

    17th US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2015.11 

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    Language:English   Presentation type:Poster presentation  

    Venue:Matsumoto  

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  • Micro-Area X-Ray Diffraction for Ferroelectric Thin Films by Laboratory-Based X-Ray Diffractometer International conference

    Hitoshi Morioka, Kazuo Shinozaki, Hiroshi Funakubo

    17th US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2015.11 

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    Event date: 2015.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Matsumoto  

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  • Orientation Control of Epitaxial Tetragonal Pb(Zr, Ti)O3 Thin Films Grown on (100)KTaO3 Substrates by Tuning the Zr/(Zr+Ti) Ratio International conference

    Daichi Ichinose, Takaaki Nakashima, Yoshitaka Ehara, Takahiro Oikawa, Takao Shimizu, Osami Sakata, Tomoaki Yamada, Hiroshi Funakubo

    17th US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2015.11 

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    Language:English   Presentation type:Poster presentation  

    Venue:Matsumoto  

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  • Size Dependence of Domain Structure in Tetragonal Pb(Zr,Ti)O3 Nanorods International conference

    T. Yamada, D. Ito, O. Sakata, T. Kiguchi, T. Shiraishi, T. Shimizu, H. Funakubo, M. Yoshino, T. Nagasaki

    17th US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2015.11 

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    Language:English   Presentation type:Poster presentation  

    Venue:Matsumoto  

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  • MOCVD growth of β-FeSi2 on Si via vapor-liquid-solid method using Au-Si liquids phase International conference

    K. Akiyama, H. Funakubo

    DPS 2015  2015.11 

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    Language:English   Presentation type:Poster presentation  

    Venue:Awaji Island  

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  • Preparation of Fluorite-Structured Ferroelectric Thin Films and Their Characterization International conference

    Takao Shimizu, Kiriha Katayama, Tatsuhiko Yokouchi, Takahiro Oikawa, Takahisa Shiraishi, Takanori Kiguchi, Toyohiko Konno, Hiroshi Uchida, Hiroshi Funakubo

    015 International Workshop on Dielectric Thin Films for future electron devices-science and technology  2015.11 

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    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Tokyo  

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  • Fabrication of Highly Oriented Proton Conductive Oxide Thin Films International conference

    Tomoya Sato, Daichi Ichinose, Hiroshi Funakubo, Kiyoshi Uchiyama

    IUMRS-ICAM 2015  2015.10 

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    Language:English   Presentation type:Poster presentation  

    Venue:Jeju  

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  • Domain Structure and Piezoelectric Response in One-dimensional PZT Nanostructure International conference

    T. Yamada, D. Ito, O. Sakata, H. Funakubo, M. Yoshino, T. Nagasaki

    IUMRS-ICAM 2015  2015.10 

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    Venue:Jeju  

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  • Electric Property of {110}-one-axis oriented (Ba0.5Sr0.5)TiO3 (BST) Thin Films Fabricated by RF-magnetron Sputtering Method International conference

    K. Uchiyama, N. Oshima, Y. Ehara, T. Oikawa, H. Tanaka, T. Sato, H. Uchida, T. Yamada, H. Funakubo

    IUMRS-ICAM 2015  2015.10 

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    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Jeju  

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  • PZT膜における温度によるドメイン構造転移

    舟窪 浩, 一ノ瀬大地, 中島崇明, 江原祥隆, 及川貴弘, 清水荘雄, 山田智明

    第35回エレクトロセラミックス研究討論会  2015.10 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 種々の基板上に作製した (Hf0.5Zr 0.5)O2薄膜の特性

    白石貴久, 片山きりは, 横内達彦, 清水荘雄, 及川貴弘, 内田 寛, 舟窪 浩, 木口賢紀, 今野豊彦

    第35回エレクトロセラミックス研究討論会  2015.10 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都  

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  • 化学溶液堆積法により作製したエピタキシャルBaTiO3-Bi(Mg1/2Ti 1/2)O3薄膜の誘電特性

    茂木翔太, 木村純一, 舟窪 浩, 内田 寛

    第35回エレクトロセラミックス研究討論会  2015.10 

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    Language:Japanese   Presentation type:Poster presentation  

    Venue:東京都  

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  • Low Temperature MOCVD deposited Ta2O5 films with good dielectric property from Ta(NtBu)(OtBu)3 and O2 International conference

    Hirokazu Chiba, Ken-ichi Tada, Taishi Furukawa, Toshiki Yamamoto, Tadahiro Yotsuya, Noriaki Oshima, Hiroshi Funakubo

    STAC-9 & TOEO-9  2015.10 

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    Language:English   Presentation type:Poster presentation  

    Venue:Ibaraki  

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  • シリコン上への金属層導入による鉄シリサイド半導体の微細構造制御と光触媒特性

    秋山賢輔, 舟窪浩

    材料シンポジウムワークショップ - 日本材料学会  2015.10 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • Modification of c/a ratio on pulsed laser-deposited V2O3 thin films International conference

    Joe Sakai, Patrice Limelette, Hiroshi Funakubo

    WOE22  2015.10 

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    Language:English   Presentation type:Poster presentation  

    Venue:Paris  

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  • Effect of Stress on Ferroelectricity of (Hf0.5Zr0.5)O2 Thin Films International conference

    H.Funakubo, T.Shiraishi, T.Shimizu, T.Yokouchi, T.Oikawa, H.Uchida

    SSDM 2015  2015.9 

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    Event date: 2015.9

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Sapporo  

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  • 水熱合成法によるKNbO₃圧電結晶膜の厚み縦振動を利用する超音波トランスデューサの特性評価

    石河睦生, 内田庸助, 亀山大輔, 小菅信章, 澁谷素子, 舟窪浩, 黒澤実

    日本セラミックス協会第28回秋季シンポジウム  2015.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:富山市  

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  • 正方晶Pb(Zr,Ti)O3ナノロッドのドメイン構造に及ぼす脱分極電界の影響

    山田智明, 伊藤大介, 坂田修身, 黒石隼輝, 生津資大, 清水荘雄, 舟窪浩, 木口賢紀, 吉野正人, 長崎正雅

    日本セラミックス協会第28回秋季シンポジウム  2015.9 

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    Venue:富山市  

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  • ABF-STEM 法を用いた斜方晶HfO2の分極構造の解析

    中村奨梧, 範滄宇, 白石貴久, 木口賢紀, 今野豊彦, 片山きりは, 清水荘雄, 横内達彦, 及川貴弘, 舟窪浩

    日本セラミックス協会第28回秋季シンポジウム  2015.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:富山市  

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  • BaTiO3-Bi(Mg1/2Ti1/2)O3エピタキシャル薄膜の作製とその特性評価

    茂木翔太, 内田寛, 木村純一, 舟窪浩

    日本セラミックス協会第28回秋季シンポジウム  2015.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:富山市  

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  • PdO//Pd バッファ層を用いた{110} 配向Pb(Zr,Ti)O3(PZT)薄膜の作製と評価

    内山潔, 大島直也, 田中宏樹, 江原祥隆, 及川貴弘, 佐藤智也, 内田寛, 舟窪浩

    日本セラミックス協会第28回秋季シンポジウム  2015.9 

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    Venue:富山市  

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  • (Hf0.5Zr0.5)O2 薄膜の強誘電性に及ぼす歪の効果

    舟窪 浩, 白石 貴久, 片山 きりは, 横内 達彦, 清水 荘雄, 及川 貴弘, 内田 寛

    日本金属学会2015年秋期講演大会  2015.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:福岡市  

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  • ナノシート界面層を利用したBaTiO3薄膜の選択配向成長

    野口 慶人, 茂木 翔太, 舟窪 浩, 内田 寛

    第76回応用物理学会秋季学術講演会  2015.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • XRD測定による (100)/(001)配向正方晶Pb(Zr,Ti)O3膜の電界印加下の結晶構造変化の定量分析

    舟窪 浩, 大島 直也, 清水 荘雄, 中島 光雅, 江原 祥隆, 及川 貴弘, 内田 寛

    第76回応用物理学会秋季学術講演会  2015.9 

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    Venue:名古屋市  

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  • Si基板上への斜方晶エピタキシャルHfO2基薄膜の作製

    片山 きりは, 清水 荘雄, 木口 賢紀, 赤間 章裕, 今野 豊彦, 内田 寛, 坂田 修身, 舟窪 浩

    第76回応用物理学会秋季学術講演会  2015.9 

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    Venue:名古屋市  

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  • 正方晶Pb(Zr,Ti)O3薄膜におけるZr/(Zr+Ti)比のドメイン構造への影響

    一ノ瀬 大地, 中島 崇明, 江原 祥隆, 清水 荘雄, 坂田 修身, 山田 智明, 舟窪 浩

    第76回応用物理学会秋季学術講演会  2015.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • 斜方晶エピタキシャルHfO2基薄膜のドメイン構造

    清水 荘雄, 片山 きりは, 木口 賢紀, 赤間 章裕, 今野 豊彦, 内田 寛, 坂田 修身, 舟窪 浩

    第76回応用物理学会秋季学術講演会  2015.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • {100}, {111}配向Pb(Zr,Ti)O3ナノロッドのドメイン構造とそのサイズ依存性

    山田 智明, 伊藤 大介, 坂田 修身, 黒石 隼輝, 生津 資大, 清水 荘雄, 舟窪 浩, 吉野 正人, 長崎 正雅

    第76回応用物理学会秋季学術講演会  2015.9 

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    Venue:名古屋市  

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  • RFマグネトロンスパッタリング法による{110}高配向Ba(Ce,Y)O3ぺロブスカイト薄膜の作製

    佐藤 智也, 一ノ瀬 大地, 舟窪 浩, 内山 潔

    第76回応用物理学会秋季学術講演会  2015.9 

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    Venue:名古屋市  

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  • スパッタリング法によるCa-Mg-Si基膜の作製と特性評価

    上原 睦雄, 黒川 満央, 秋山 賢輔, 松島 正明, 内田 寛, 木村 好里, 舟窪 浩

    第76回応用物理学会秋季学術講演会  2015.9 

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    Venue:名古屋市  

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  • (100)/(001)配向エピタキシャルPbTiO3膜におけるドメイン構造に及ぼす温度と格子歪みの影響

    舟窪 浩, 中島 崇明, 一ノ瀬 大地, 江原 祥隆, 中島 光雅, 清水 荘雄, 小林 健, 飯島 高志, 山田 智明

    第76回応用物理学会秋季学術講演会  2015.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • 窒素(N)ドーピングした鉄シリサイドのPL発光特性

    秋山 賢輔, 高橋 亮, 松本 佳久, 舟窪 浩

    第76回応用物理学会秋季学術講演会  2015.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:名古屋市  

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  • PLD法で作製したV2O3薄膜の相転移特性とc/a軸長比

    坂井 穣, リムレット パトリス, 舟窪 浩

    第76回応用物理学会秋季学術講演会  2015.9 

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    Venue:名古屋市  

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  • HfO2基強誘電体のエピタキシャル成長とその特性評価

    舟窪浩

    新学術領域研究「ナノ構造情報のフロンティア開拓―材料科学の新展開」第5回全体会議  2015.7 

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    Event date: 2015.7

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • Phase Identification of Ca-Si Films prepared on (001) Al2O3 Substrates Using X-ray Diffraction Wide Area Reciprocal Space Mapping Method International conference

    M. Uehara, K. Akiyama, M. Matsushima, T. Shimizu, H. Uchida, Y. Kimura, H. Funakubo

    2015.7 

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    Language:English   Presentation type:Poster presentation  

    Venue:Tsukuba  

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  • Growth and structural analysis of epitaxial orthorhombic YO1.5-HfO2 thin films International conference

    K. Katayama, T. Shimizu, O. Sakata, T. Kiguchi, A. Akama, T. J. Konno, S. Nakamura, H. Uchida, H. Funakubo

    NIMS Conference 2015  2015.7 

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    Language:English   Presentation type:Poster presentation  

    Venue:Tsukuba  

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  • Electric Measurement of Proton Conductive Perovskite Thin Films Deposited by RF Magnetron Sputtering International conference

    Tomoya SATO, Takaaki INOUE, Hiroshi FUNAKUBO, Kiyoshi UCHIYAMA

    EM-NANO 2015  2015.6 

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    Language:English   Presentation type:Poster presentation  

    Venue:Niigata  

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  • Domain Structure and Piezoelectric Response in Epitaxial PZT 1D-Nanorods and 2D-Thin Films International conference

    T. Yamada, D. Ito, O. Sakata, J. Yasumoto, T. Shiraishi, T. Shimizu, M. Yoshino, H. Funakubo, T. Nagasaki

    EM-NANO 2015  2015.6 

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    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Niigata  

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  • The effect of electrolyte concentration on silicon nanoparticles prepared by laser ablation in liquid International conference

    Pattarin Chewchinda, Yoshitaka Kitamoto, Hiroshi Funakubo, Michikazu Hara, Osamu Odawara, Hiroyuki Wada

    LAMP2015  2015.5 

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    Venue:Kitakyushu  

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  • Reactive Sputtering Process and Properties of Ba(ZrxTi1-x)O3 Films for High Frequency Applications International conference

    Jinwoong KIM, Hiromi SHIMA, T. YAMAMOTO, Shintaro YASUI, Hiroshi FUNAKUBO, Tomoaki YAMADA, Ken NISHIDA

    ISAF-ISIF-PFM 2015  2015.5 

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  • Evaluation of Oxygen Vacancy in ZnO Using Raman Spectroscopy International conference

    Hiroaki FUKUSHIMA, Tomomi KOZU, Hiromi SHIMA, Hiroshi FUNAKUBO, Hiroshi UCHIDA, Takashi KATODA, Ken NISHIDA

    ISAF-ISIF-PFM 2015  2015.5 

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  • Fabrication of Tetragonal Pb(Zr,Ti)O3 Nanorods by Focused Ion Beam and Characterization of the Domain Structure International conference

    Daisuke ITO, Tomoaki YAMADA, Osami SAKATA, Junki KUROISHI, Takahiro NAMAZU, Takahisa SHIRAISHI, Takao SHIMIZU, Hiroshi FUNAKUBO, Masahito YOSHINO, Takanori NAGASAKI

    ISAF-ISIF-PFM 2015  2015.5 

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  • Searching for the Origin of the Ferroelectric Phase in HfO2 International conference

    Uwe SCHROEDER, Tony SCHENK, Claudia RICHTER, M. HOFFMANN, Dominik MARTIN, T. SHIMIZU, Hiroshi FUNAKUBO, Darius POHL, Christoph ADELMANN, R. MATERLIK, Alfred KERSCH, X. SANG, James LEBEAU, Sergei V. KALININ, Thomas MIKOLAJICK

    ISAF-ISIF-PFM 2015  2015.5 

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  • Large Piezoelectricity Driven by Electrically-Induced High-Density Ferroelastic Domains in Tetragonal Pb(Zr, Ti)O3 Films International conference

    Hiroshi FUNAKUBO, Mitsumasa NAKAJIMA, Hiorshi NAKAKI, Tomoaki YAMADA, Ayumi WADA, Takahiro OIKAWA, Takaaki NAKASHIMA, Yohitaka EHARA, Naoya OSHIMA, Alexei GRUVERMAN

    ISAF-ISIF-PFM 2015  2015.5 

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  • Piezoelectric Response in Epitaxial PZT 1D-Nanorods and 2D-Thin Films International conference

    Tomoaki YAMADA, Jun YASUMOTO, Daisuke ITO, Osami SAKATA, Takanori KIGUCHI, Hidenori TANAKA, Yoshitaka EHARA, Shintaro YASUI, Takahiro OIKAWA, Hiroshi FUNAKUBO, Masahito YOSHINO, Takanori NAGASAKI

    ISAF-ISIF-PFM 2015  2015.5 

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  • CSD 由来HfO2-ZrO2 固溶体薄膜の結晶構造と誘電特性

    阿部千穂子, 塩川真里奈, 片山きりは, 白石貴久, 清水荘雄, 舟窪 浩, 内田 寛

    第32回強誘電体応用会議(FMA 32)  2015.5 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • 水熱合成(K0.5Na0.5)NbO3 膜の結晶構造と製膜メカニズムの調査

    白石貴久, 黒澤 実, 舟窪 浩, 内田 寛, 木口賢紀, 今野豊彦

    第32回強誘電体応用会議(FMA 32)  2015.5 

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    Venue:京都市  

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  • 正方晶Pb(Zr,Ti)O3 ナノロッドのドメイン構造とそのサイズ依存性

    山田智明, 伊藤大介, 坂田修身, 黒石隼輝, 生津資大, 白石貴久, 清水荘雄, 舟窪 浩, 吉野正人, 長崎正雅

    第32回強誘電体応用会議(FMA 32)  2015.5 

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    Venue:京都市  

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  • Zr/(Zr+Ti)比によるPb(Zr,Ti)O3 薄膜のドメイン制御

    一ノ瀬大地, 中島祟明, 江原祥隆, 及川貴弘, 清水荘雄, 山田智明, 舟窪 浩

    第32回強誘電体応用会議(FMA 32)  2015.5 

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    Event date: 2015.5

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • 斜方晶相を含むエピタキシャルHfO2 基薄膜の作製と評価

    片山きりは, 清水荘雄, 白石貴久, 及川貴弘, 木口賢紀, 赤間章裕, 今野豊彦, 中村奨梧, 内田 寛, 舟窪 浩

    第32回強誘電体応用会議(FMA 32)  2015.5 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:京都市  

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  • PdO/Pd バッファ層を用いた{110}配向ペロブスカイト薄膜の作製とその物性評価

    内山 潔, 大島直也, 江原祥隆, 及川貴弘, 田中宏樹, 佐藤智也, 内田 寛, 舟窪 浩

    第32回強誘電体応用会議(FMA 32)  2015.5 

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    Venue:京都市  

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  • Ferroelectricity of HfO2-based thin Films International conference

    T. Shimizu, H. Funakubo

    International Workshop on Topological Structures in Ferroic Materials 2015  2015.5 

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    Event date: 2015.5

    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:New South Wales  

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  • Strain effect on transport properties of pulsed laser deposited V2O3 thin films International conference

    Joe Sakai, Hiroshi Funakubo

    Joint Workshop GDRi CNRS MECANO and GDR CNRS OXYFUN  2015.4 

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    Event date: 2015.4

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Louvain-la-Neuve  

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  • 液中レーザーアブレーションによるシリコンナノ粒子の作製と太陽電池への応用

    小林 宏輝, Pattarin Chewchinda, 大谷 弘之, 舟窪 浩, 小田原 修, 和田 裕之

    レーザー学会学術講演会第35回年次大会  2015.1 

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    Event date: 2015.1

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京港区  

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  • 液中レーザーアブレーションによるシリコンナノ粒子を用いた量子ドット増感太陽電池への検討

    小林 宏輝, Pattarin Chewchinda, 大谷 弘之, 舟窪 浩, 小田原 修, 和田 裕之

    電気化学会第80回大会  2013 

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    Event date: 2013.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:仙台  

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  • 高周波誘導加熱法による結晶化チタン酸バリウム層の低温作製

    松下伸広, 立道諭, 勝又健一, 舟窪浩, 岡田清, 山田智明

    2011年秋季シンポジウム  2011.9 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:札幌  

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  • MOCVD法により作製したBi1.5Zn1.0Nb1.5O7(BZN)薄膜の評価

    岡浦伸吾, 鈴木宗泰, 岡本庄司, 内田 寛, 幸田清一郎, 舟窪 浩

    2005年春季第52回応用物理学関係連合講演会  2005.3 

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    Venue:埼玉大学  

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  • ビスマス層状誘電体薄膜のサイズ効果フリー特性の起源

    舟窪浩, 小嶌隆志, 渡辺隆之, 高橋健治, 鈴木宗泰, 坂下幸雄, 及川貴弘, 加藤一美

    日本セラミックス協会2005年年会  2005.3 

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    Venue:岡山大学  

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  • XRDを用いた強誘電体ドメイン体積分率変化の印加電界依存性に関する評価

    斎藤啓介, 岡本庄司, 横山信太郎, 黒澤利行, 植木定雄, 舟窪 浩

    2005年春季第52回応用物理学関係連合講演会  2005.3 

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    Venue:埼玉大学  

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  • ローカルエピタキシャル成長した(111)配向(Ba,Sr)TiO3薄膜の作製と評価

    伊藤信一, 高橋健治, 岡本庄司, 掘露伊保龍, 舟窪 浩

    2005年春季第52回応用物理学関係連合講演会  2005.3 

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    Venue:埼玉大学  

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  • Impact of 90°-Domain Switching On High d33 in (100)-Oriented Epitaxial Pb(ZrxTi1-x)O3 Films Grown On (100)SrRuO3/(100)SrTiO3 Substrates International conference

    Yong Kwan Kim, Risako Ueno, Shintaro Yokoyama, Hitoshi Morioka, Hiroshi Funakubo

    2005.4 

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    Venue:Hotel Equatorial, Shanghai, China  

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  • Compositional Dependence of Piezoelectric Response on Epitaxial Pb(Zr1-x, Tix)O3 and (1-x)Pb(Mg1/3Nb2/3)O3-(x)PbTiO3 Thick Films grown by MOCVD International conference

    Shintaro Yokoyama, Satoshi Okamoto, Shoji Okamoto, Keisuke Saito, Hirofumi Matsuda, Takashi Iijima, Hirotake Okino, Takashi Yamamoto, Hiroshi Funakubo

    2005.4 

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    Venue:Hotel Equatorial, Shanghai, China  

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  • Structural And Electrical Properties Of BiFeO3 Thin Films International conference

    S. K. Singh, H. Funakubo, H. Uchida, H. Ishiwara

    2005.4 

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    Venue:Hotel Equatorial, Shanghai, China  

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  • A New Method To Characterize A Relative Volume To The C-Domain In PZT Films Based On The Raman Spectra International conference

    Ken Nishida, Syunsuke Wada, Minoru Osada, Shoji Okamoto, Risako Ueno, Hiroshi Funakubo, Takashi Katoda

    2005.4 

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    Venue:Hotel Equatorial, Shanghai, China  

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  • Temperature Dependency of P-E hysteresis Loops of Rhombohedral PZT films International conference

    Hiroshi Funakubo, Akihiro Sumi, Hitoshi Morioka, Shoji Okamoto, Shintaro Yokoyama

    12th US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2005.11 

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    Venue:Annapolis, Maryland, USA  

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  • Structural Modulation in Bismuth Cuprate Supeconductor Observed by X-ray Reciprocal Space Mapping International conference

    Satoru Kaneko, Kensuke Akiyama, Yoshitada Shimizu, Yasuo Hirabayashi, Seishiro Ohya, Hiroshi Funakubo, Mamoru Yoshimoto

    16th American Conference on Crystal Growth and Epitaxy  2005.7 

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    Venue:Montana, USA  

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  • Low critical current density in BiFeO3 thin films fabricating by chemical solution method

    S. K. Singh, R. Ueno, H. Funakubo, H. Uchida, S. Kado, H. Ishiwara

    第22回強誘電体応用会議(FMA-22)  2005.5 

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    Venue:コープイン京都  

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  • Photoluminescence Enhancement of beta-FeSi2 by Si/beta-FeSi2/Si Double-Heterostructure International conference

    Kensuke Akiyama, Satoru Kaneko, Hiroshi Funakubo

    2005.5 

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    Venue:Awaji Island, Hyogo, Japan  

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  • Growth of Flat-surface β-FeSi2 Epitaxial Films on (100) and (111) Si substrates by MOCVD International conference

    Kensuke Akiyama, Satoru Kaneko, Takashi Suemasu, Hiroshi Funakubo

    16th American Conference on Crystal Growth and Epitaxy  2005.7 

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    Venue:Montana, USA  

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  • In-Plane Orientation Dependence on the Electrical Properties of (100)/(001)-Oriented Pb(Zr, Ti)O3 Films Grown on (100)Si and (100)SrTiO3 Substrates International conference

    H.Funakubo, S.Okamoto, S.Yokoyama

    2005.7 

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    Venue:Montana, USA  

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  • Epitaxial Growth and Magnetic Properties of Fe3Si Thin Films

    2006 MRS Fall Meeting  2006 

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  • Controlling the domain structures of epitaxial Pb(Zr,Ti)O3 film on SrRuO3(001)/SrTiO3(001) substrates

    Yong Kwan Kim, Hitoshi Morioka, Risako Ueno, Shintaro Yokoyama, Hiroshi Funakubo

    The 43rd Symposium on Basic Science of Ceramics  2005.1 

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    Venue:新日鐵幕張研修センター(千葉市)  

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  • Direct Observation of Domain Formation in PbTiO3 Film using in-situ Raman-CVD Combined Equipment

    2006 MRS Fall Meeting  2006 

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  • Performance Of SrRu O3/Ru Tailored Electrodes For 3D Ferroelectric Capacitor International conference

    Jun Minamidate, Atsushi Nagai, Hiroshi Funakubo

    2005.4 

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    Venue:Hotel Equatorial, Shanghai, China  

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  • Dielectric Property of BST Films Prepared on SrRu O3/Pt Hybrid Electrode International conference

    Shin-ichi Ito, Kenji Takahashi, Shoji Okamoto, I.P.Koutsaroff, A.Cervin-Lawry, Joe Sakai, Nobuaki Ito, Hiroshi Funakubo

    2005.4 

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    Venue:Hotel Equatorial, Shanghai, China  

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  • Effect Of In-Plane Orientations And Strain On Electrical Properties Of (111)-Oriented Tetragonal PZT Thin Films International conference

    Hiroki Kuwabara, Akihiro Sumi, Shoji Okamoto, Shintaro Yokoyama, Hiroshi Funakubo

    2005.4 

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    Venue:Hotel Equatorial, Shanghai, China  

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  • Ferroelectric and Electrode Fabrication for 3D structure International conference

    Hiroshi Funakubo

    2005.4 

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    Venue:Shanghai, China  

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  • Origin of Size Effect Free Characteristics of Bismuth Layer Structured Dielectrics Thin Films International conference

    H. Funakubo, T. Kojima, T. Watanabe, M. Suzuki, K. Takahashi

    2005.4 

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    Venue:Baltimore Marriott Waterfront, Baltimore, Maryland, U.S.A.  

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  • Ferroelectric Properties of Rare-Earth Substituted Bismuth Iron Oxide Thin Films Fabricated By Chemical Solution Deposition Method International conference

    Hiroshi Uchida, Risako Ueno, Hiroshi Nakaki, Masao Kondo, Kenji Maruyama, Hiroshi Funakubo, Seiichiro Koda

    The International Symposium on Integrated Ferroelectrics (ISIF 2005)  2005.4 

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    Venue:Hotel Equatorial, Shanghai, China  

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  • Preparation of 3D Ferroelectric Capacitor Using MOCVD-Pb(Zr, Ti)O3 Film International conference

    Hiroshi Funakubo, Atsushi Nagai, Gouji Asano, Jun Minamidate

    2005.4 

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    Venue:Hotel Equatorial, Shanghai, China  

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  • Control of s-FeSi2/Si Interface Structure by Cu Thin Layer

    The 16th International Microscopy Congress (IMC16)  2006 

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  • MOCVD合成したエピタキシャルPZT膜とPMN-PT膜の圧電特性比較

    舟窪浩, 横山信太郎, 中木寛

    日本セラミックス協会第19回秋季シンポジウム  2006.9 

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    Venue:山梨大学(甲府キャンパス)  

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  • 圧電膜の新規巨大圧電性発現機構の可能性

    舟窪浩

    セラミックス総合研究会  2006.10 

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    Venue:飛騨地域地場産業振興センター(岐阜県高山市)  

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  • Thickness-Degradation-Free Deielectric Thin Films”

    JSPS日中セラミックス科学セミナー  2006 

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  • 自然超格子構造を用いたサイズ効果フリー誘電体キャパシタ

    舟窪浩

    第47回真空に関する連合講演会  2006.11 

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    Venue:大阪大学コンベンションセンター(大阪府吹田市)  

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  • 強誘電体/新材料アプリケーションの最新動向

    舟窪浩

    圧電膜評価及びマルチフェロイックデバイス等新材料評価の最前線セミナー  2006.10 

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    Venue:株式会社東陽テクニカ営業第二部  

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  • Impact of (111)-Oriented SrRuO3/Pt Tailored Electrode for Highly Reporoducible Preparation of MOCVD-PZT Film for High Density FeRAM

    2006 International Conference on Solid State Devices and Materials (SSDM 2006)  2006 

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  • Highly Reproducible MOCVD Deposition of (111)-oriented PZT Films on SrRuO3/Pt/TiO2/SiO2/Si: Structure and Electric Properties within MOCVD Process Window

    The 5th Asian Meeting on Ferroelectrics (AMF-5)  2006 

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  • 酸化物ナノシートの積層集積による高誘電体デバイスの作製

    長田実, 海老名保男, 舟窪浩, 木口賢紀, 高田和典, 佐々木高義

    日本セラミックス協会第19回秋季シンポジウム  2006.9 

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    Venue:山梨大学(甲府キャンパス)  

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  • アニール処理されたSrRuO3薄膜の酸素含有量と電気特性

    坂井穣, 伊藤暢晃, 伊藤信一, 高橋健治, 舟窪浩

    日本セラミックス協会第19回秋季シンポジウム  2006.9 

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    Venue:山梨大学(甲府キャンパス)  

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  • X線逆格子マッピングによるBi系超伝導薄膜の超構造評価

    金子智, 秋山賢輔, 平林康男, 舟窪浩, 吉本護

    2006年春季第53回応用物理学関係連合講演会  2006.3 

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    Venue:武蔵工業大学(世田谷キャンパス)  

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  • 化学溶液法によるBiFeO3-BiScO3薄膜の作製

    安井伸太郎, 内田寛, 中木寛, 舟窪浩, 幸田清一郎

    2006年春季第53回応用物理学関係連合講演会  2006.3 

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    Venue:武蔵工業大学(世田谷キャンパス)  

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  • In Situ Domain Dynamics Of Epitaxial Pb(Zr,Ti)O3 Films In A Simultaneous Raman And Electrical Experiment”

    International Symposium on Integrated Ferroelectrics 2006 (ISIF2006)  2006 

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  • Fatigue Properties In Epitaxial Pb(Zr0.35Ti0.65)O3 Films With Various Volume Fractions Of 90° Domains Grown On (100)cSrRuO3/(100)SrTiO3 Substrates

    International Symposium on Integrated Ferroelectrics 2006 (ISIF2006)  2006 

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  • Dy置換PZT薄膜におけるサイト占有率と分極特性と相関

    西田謙, 長田実, 内田寛, 中木寛, 幸田清一郎, 舟窪浩, 河東田隆

    第23回強誘電体応用会議(FMA-23)  2006.5 

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    Venue:コープイン京都  

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  • MOCVD合成したBi-Zn-Nb-O薄膜の誘電特性に及ぼす基板種および組成の効果

    岡浦伸吾, 内田寛, 幸田清一郎, 長田実, 舟窪浩

    第23回強誘電体応用会議(FMA-23)  2006.5 

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    Venue:コープイン京都  

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  • Development Of Low Voltage-Saturated Polycrystalline (111)-One-Axis-Oriented PZT Films

    The International Symposium on Integrated Ferroelectrics (ISIF 2006)  2006 

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  • β-FeSi2 /Si(100)界面構造に及ぼすCuの影響

    秋山賢輔, 金子智, 板倉賢, 舟窪浩, 前田佳均

    2006年春季第53回応用物理学関係連合講演会  2006.3 

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    Venue:武蔵工業大学(世田谷キャンパス)  

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  • Strain Effect Due To The Bottom Electrodes In Epitaxial BiFeO3 Films Formed By Chemical Solution Deposition

    International Symposium on Integrated Ferroelectrics 2006 (ISIF2006)  2006 

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  • Properties Of A Novel Bismuth Percursor For MOCVD

    International Symposium on Integrated Ferroelectrics 2006 (ISIF2006)  2006 

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  • 多結晶(Pb,La)(Zr0.65,Ti0.35)O3膜における圧電特性のLa量依存性/

    第17回日本MRS学術シンポジウム  2006 

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  • ラマン・電気特性同時測定によるエピタキシャルPZT薄膜のドメイン構造のその場評価

    長田実, 金容寛, 横山信太郎, 舟窪浩

    2006年春季第53回応用物理学関係連合講演会  2006.3 

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    Venue:武蔵工業大学(世田谷キャンパス)  

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  • MOCVD成長エピタキシャルPZT膜の新規ドメイン構造

    中木寛, 金容寛, 横山信太郎, 西田謙, 河東田隆, 舟窪浩

    2006年春季第53回応用物理学関係連合講演会  2006.3 

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    Venue:武蔵工業大学(世田谷キャンパス)  

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  • Dy置換されたPZT薄膜のサイト選択性とその強誘電性

    西田謙, 長田実, 内田寛, 中木寛, 幸田清一郎, 舟窪浩, 河東田隆

    2006年春季第53回応用物理学関係連合講演会  2006.3 

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    Venue:武蔵工業大学(世田谷キャンパス)  

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  • 正方晶と菱面体晶が共存するMPB近傍組成を有するPb(Zr,Ti)O3エピタキシャル膜のドメイン構造

    横山信太郎, 西田謙, 河東田隆, 斎藤啓介, 舟窪浩

    2006年春季第53回応用物理学関係連合講演会  2006.3 

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    Venue:武蔵工業大学(世田谷キャンパス)  

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  • MOCVD法によるエピタキシャルPZN-PT膜の合成

    舟窪浩, 横山信太郎, 岡本賢, 岡本庄司, 斎藤啓介, 内田寛, 幸田清一郎

    第44回セラミックス基礎科学討論会  2006.1 

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    Venue:高知市文化プラザかるぽーと(高知市)  

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  • 顕微ラマン分光法によるPZT薄膜の評価偏光解析によるドメイン構造と分極特性の評価

    西田謙, 長田実, 舟窪浩, 河東田隆

    第44回セラミックス基礎科学討論会  2006.1 

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    Venue:高知市文化プラザかるぽーと(高知市)  

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  • 希土類置換ビスマスフェライト薄膜の結晶構造と電気特性

    内田寛, 安井伸太郎, 舟窪浩, 幸田清一郎

    日本セラミックス協会2006年年会  2006.3 

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    Venue:東京大学(駒場キャンパス)  

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  • MOCVDによる(111)一軸配向正方晶PZT膜の合成

    舟窪浩, 桑原弥紀, 横山信太郎, 西田謙, 河東田隆

    日本セラミックス協会2006年年会  2006.3 

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    Venue:東京大学(駒場キャンパス)  

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  • ラマン分光及びマイクロビームX線回折を用いたマイクロパターニングPZT薄膜の構造解析

    西田謙, 横山信太郎, 長田実, 斉藤啓介, 坂本修身, 木村滋, 舟窪浩, 河東田隆

    2006年春季第53回応用物理学関係連合講演会  2006.3 

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    Venue:武蔵工業大学(世田谷キャンパス)  

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  • Highly Reproducible MOCVD Deposition of (111)-oriented PZT Films on SrRuO3/Pt/TiO2/SiO2/Si: Structure and Electric Properties within MOCVD Process Window International conference

    Nicolas Menou, Hiroki Kuwabara, Hiroshi Funakubo

    The 5th Asian Meeting on Ferroelectrics (AMF-5)  2006.9 

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    Venue:Tokyo University of Science, Noda, Japan,  

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  • Control of s-FeSi2/Si Interface Structure by Cu Thin Layer

    The 16th International Microscopy Congress (IMC16)  2006 

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  • Thickness-Degradation-Free Deielectric Thin Films”

    90)Hiroshi Funakubo, Kenji Takahashi, Takashi Kojima, Takayuki Watanabe, Osami Sakata, Kazushi Sumitani, Yukio Sakashita, Muneyasu Suzuki, Kazumi Kato

    JSPS日中セラミックス科学セミナー  2006.9 

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    Venue:名鉄犬山ホテル(愛知県犬山市)  

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  • Impact of (111)-Oriented SrRuO3/Pt Tailored Electrode for Highly Reporoducible Preparation of MOCVD-PZT Film for High Density FeRAM International conference

    N. Menou, H. Kuwabara, H. Funakubo

    2006 International Conference on Solid State Devices and Materials (SSDM 2006)  2006.9 

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    Venue:PACIFICO YOKOHAMA, Japan  

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  • Highly Reproducible Preparation of (111)-oriented PZT Ferroelectric Capacitors Using (111)SrRuO3/(111)Pt/Tio2/SiO2/Si Bottom Electrode : MOCVD Deposition, Top Electrode and Reliability

    N. Menou, H. Kuwabara, J. Cross, K. Maruyama, H. Funakubo

    2006年秋季第67回応用物理学会学術講演会  2006.8 

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    Venue:立命館大学びわこ・くさつキャンパス(滋賀県草津市)  

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  • Domain Structure of Pb(Zr,Ti)O3 Thick Films Near MPB Composition Consisting of Mixture of Tetragonal and Rhombohedral Phases International conference

    Shintaro Yokoyama, Ken Nishida, Takashi Katoda, Keisuke, Saito, Hiroshi Funakubo

    15th IEEE International Symposium on the Applications of Ferroelectrics (ISAF2006)  2006.8 

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    Language:English   Presentation type:Poster presentation  

    Venue:The Seatrail Golf Resort and Conference Center, Sunset Beach, North Carolina  

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  • Expansion Trial of "Size-Effect-Free" Dielectric Thin Film to the Real Application International conference

    Hiroshi Funakubo, Kenji Takahshi

    International Workshop on Advanced Ceramics (IWAC)  2006 

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    Language:English   Presentation type:Oral presentation (invited, special)  

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  • In-Situ Gas-Phase FTIR Monitoring of Liquid Delivery MOCVD Process for PZT Films Preparation International conference

    Hiroshi Funakubo, Gouji Asano, Kazuaki Tonari, Yukichi Takamatsu, Kunio Ohtsuki, Tsukasa Satake

    Process Intensification and Innovation Process (PI)2 Conference II Cleaner, Sustainable, Efficient Technologies for the Future  2006.9 

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    Venue:Chateau on the Park, Christchurch, New Zealand  

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  • Direct Observation of Domain Formation in PbTiO3 Film using in-situ Raman-CVD Combined Equipment International conference

    Ken Nishida, Hiroshi Funakubo, Takashi Katoda

    2006 MRS Fall Meeting  2006.12 

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    Venue:Hynes Convention Center and Sheraton Boston Hotel, Boston, MA  

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  • Epitaxial Growth and Magnetic Properties of Fe3Si Thin Films International conference

    66)Kensuke Akiyama, Satoru Kaneko, Yasuo Hirabayashi, Azusa Kyoduka, Yutaka Sawada, Hiroshi Funakubo

    2006 MRS Fall Meeting  2006.11 

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    Venue:Hynes Convention Center and Sheraton Boston Hotel, Boston, MA  

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  • Fatigue Properties In Epitaxial Pb(Zr0.35Ti0.65)O3 Films With Various Volume Fractions Of 90° Domains Grown On (100)cSrRuO3/(100)SrTiO3 Substrates International conference

    Yong Kwan Kim, Hitoshi Morioka, Osami Sakata, Shigeru Kimura, Hiroshi Funakubo

    International Symposium on Integrated Ferroelectrics 2006 (ISIF2006)  2006.4 

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    Language:English   Presentation type:Poster presentation  

    Venue:Marriott Waikiki Beach Resort and Spa, Honolulu  

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  • Strain Effect Due To The Bottom Electrodes In Epitaxial BiFeO3 Films Formed By Chemical Solution Deposition International conference

    S. K. Singh, Y. K. Kim, H. Kuwabara, H. Funakubo, H. Ishiwara

    International Symposium on Integrated Ferroelectrics 2006 (ISIF2006)  2006.4 

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    Language:English   Presentation type:Poster presentation  

    Venue:Marriott Waikiki Beach Resort and Spa, Honolulu  

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  • Single-Phase Pb(Zn1/3Nb2/3)O3 Thin Films Grown by Metalorganic Chemical Vapor Deposition: -Effects of Growth Sequence and Kinds of Substrates- International conference

    K. Nishida, S. Yokoyama, S. Okamoto, K. Saito, H. Uchida, S. Koda, T. Katoda, H. Funakubo

    13th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII)  2006.5 

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    Venue:Phoenix Seagaia Resort, Miyazaki Japan  

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  • In Situ Domain Dynamics Of Epitaxial Pb(Zr,Ti)O3 Films In A Simultaneous Raman And Electrical Experiment” International conference

    Osada Minoru, Kim Yong Kwan, Yokoyama Shintaro, Funakubo Hiroshi

    International Symposium on Integrated Ferroelectrics 2006 (ISIF2006)  2006.4 

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    Venue:Marriott Waikiki Beach Resort and Spa, Honolulu  

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  • La Content Dependence of Piezoelectric Properties of Polycrystalline (Pb,La)(Zr0.65,Ti0.35)O3 Films

    H.Shima, H.Naganuma, S.Okamura, T.Iijima, H.Funakubo

    2006 

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  • Properties Of A Novel Bismuth Percursor For MOCVD International conference

    T.Furukawa, N.Oshima, M.Suzuki, S.Okaura, H.Funakubo

    International Symposium on Integrated Ferroelectrics 2006 (ISIF2006)  2006.4 

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    Venue:Marriott Waikiki Beach Resort and Spa, Honolulu  

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  • Development Of Low Voltage-Saturated Polycrystalline (111)-One-Axis-Oriented PZT Films International conference

    Hiroshi Funakubo, Hiroki Kuwabara, Shintaro Yokoyama

    The International Symposium on Integrated Ferroelectrics (ISIF 2006)  2006.4 

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    Language:English   Presentation type:Oral presentation (invited, special)  

    Venue:Marriott Waikiki Beach Resort and Spa, Honolulu, Hawaii  

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  • Control of -FeSi2/Si Interface Structure by Cu Layer

    Science and Technology Towards Sustainable Optoelectronics (APAC-SILICIDE 2006)  2006 

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  • Structural Characterization of BiFeO3 Thin Films International conference

    斎藤啓介, 黒澤利行, 植木定雄, HIROSHI FUNAKUBO

    2006.5 

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  • Strain Relaxation in Eptaxial Thick PbTiO3 Films Grown by MOCVD International conference

    Hiroshi Nakaki, Yong Kwan Kim, Shintaro Yokoyama, Ken Nishida, Takashi Katoda, Keisuke Saito, Hiroshi Funakubo

    15th IEEE International Symposium on the Applications of Ferroelectrics (ISAF2006)  2006.7 

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    Venue:The Seatrail Golf Resort and Conference Center, Sunset Beach, North Carolina  

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  • SrRuO_3_/Pt(111)とPt(111)の上にスパッタで形成されたBiFeO_3_膜の電気特性評価

    2008年(平成20年)秋季第69回応用物理学会学術講演会  2008 

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  • Growth of Epitaxial Potassium Niobate Film on (100)SrRuO3/(100)SrTiO3 by Hydrothermal Method and Their Electromechanical Properties

    Proc. 2008 Materials Research Society Fall Meeting  2008 

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  • 水熱合成法によるKNbO3エピタキシャル膜の作製と特性評価

    第29回超音波エレクトロニクスの基礎と応用に関するシンポジウム  2008 

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  • 配向制御したPZT 単結晶厚膜の振動特性に関する検討

    日音講論集  2008 

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  • VHF帯超音波イメージングを目的としたKNbO3配向制御膜トランスデューサ

    2009 

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  • Geometric phase analysis of nano-strain field in oxide thin films

    T.Kiguchi, K.Aoyagi, T.J.Konno, N.Wakiya, K.Shinozaki, S.Utsugi, T. Yamada, H. Funakubo

    22nd Fall Meeting of The Ceramic Society of Japan  2009.9 

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    The geometric phase analysis of 90° domain structure of PbTiO3/SrTiO3 epitaxilal film and another oxide thin films using HAADF-STEM. The PbTiO3 film has two layered structure of a-c mixed layer on the completely c-domain layer. The latter layer has longer c-axis than that of the former because of the pseudomorphism. The lattice planes in the a-domain are strongly bended, which is related with the misfit dislocation

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  • “Degradation Free Characteristics of c-axis Oriented Bismuth Layer-Structured Dielectrics”

    International Symposium on Integrated Ferroelectrics (ISIF 2007)  2007 

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  • Growth of Epitaxial Potassium Niobate Film on (100)SrRuO3/(100)SrTiO3 by Hydrothermal Method and Their Electromechanical Properties

    Proc. 2008 Materials Research Society Fall Meeting  2008 

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  • “Degradation Free Characteristics of c-axis Oriented Bismuth Layer-Structured Dielectrics”

    International Symposium on Integrated Ferroelectrics (ISIF 2007)  2007 

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  • (100)/(001)配向PbTiO3エピタキシャル膜の新規ドメイン構造

    舟窪浩, 中木寛, 碇山理究, 金容寬, 横山信太郎, 西田謙, 斎藤啓介

    日本セラミックス協会2007年年会  2007.3 

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    Venue:武蔵工業大学(世田谷キャンパス)  

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  • 水熱合成法を用いたエピタキシャルKNbO3薄膜の方位制御

    第57回応用物理学関係連合講演会講演予稿集  2010 

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  • エピタキシャルKNbO3膜の水熱合成とアニールによる特性改善

    第48回セラミックス基礎科学討論会講演論文集  2010 

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  • KNbO3 エピタキシャル膜の製膜と圧電特性の評価

    信学技報  2009 

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  • 水熱合成PZT多結晶膜を用いた小型超音波プローブの特性

    圧電材料・デバイスシンポジウム2009  2009 

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  • Geometric phase analysis of nano-strain field in oxide thin films

    22nd Fall Meeting of The Ceramic Society of Japan  2009 

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  • 水熱合成法を用いたKNbO3厚膜の成膜

    第26回強誘電体応用会議講演論文集  2009 

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  • 水熱合成PZT多結晶膜による超小型超音波プローブの開発-超音波イメージングと分解能の検討-

    日音講論集  2009 

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  • MOCVD成長エピタキシャル正方晶PZT膜の応力緩和

    中木寛, 金容寛, 横山信太郎, 西田謙, 斎藤啓介, 舟窪浩

    2006年秋季第67回応用物理学会学術講演会  2006.8 

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    Venue:立命館大学びわこ・くさつキャンパス(滋賀県草津市)  

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  • 新規ドメイン構造を有するPbTiO3膜の応力緩和

    碇山理究, 中木寛, 金容寛, 西田謙, 斎藤啓介, 舟窪浩

    2006年秋季第67回応用物理学会学術講演会  2006.8 

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    Venue:立命館大学びわこ・くさつキャンパス(滋賀県草津市)  

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  • (111)SrRuO3/(111)Pt/Tio2/SiO2/Si基板を用いた、(111)配向PZT強誘電体キャパシタの高再現性製膜

    2006年秋季第67回応用物理学会学術講演会  2006 

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  • In-situラマン分光-CVDコンビネーション装置によるPbTiO3薄膜のドメイン生成過程の直接観測

    西田謙, 舟窪浩, 河東田隆

    2006年秋季第67回応用物理学会学術講演会  2006.8 

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    Venue:立命館大学びわこ・くさつキャンパス(滋賀県草津市)  

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  • Expansion Trial of "Size-Effect-Free" Dielectric Thin Film to the Real Application

    International Workshop on Advanced Ceramics (IWAC)  2006 

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  • In-Situ Gas-Phase FTIR Monitoring of Liquid Delivery MOCVD Process for PZT Films Preparation

    Process Intensification and Innovation Process (PI)2 Conference II Cleaner, Sustainable, Efficient Technologies for the Future  2006 

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  • X線逆格子イメージ法によるBi4Ti3O12薄膜の構造観察

    坂田修身, 渡辺隆之, 舟窪浩

    2006年秋季第67回応用物理学会学術講演会  2006.8 

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    Venue:立命館大学びわこ・くさつキャンパス(滋賀県草津市)  

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  • MgO基板上RFスパッタBST薄膜コプレーナ線路構造の高周波チューナブル特性 International conference

    野田実, 伊藤信一, ダニエルポポビッチ, 奥山雅則, 舟窪浩

    2006年秋季第67回応用物理学会学術講演会  2006.8 

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    Venue:立命館大学びわこ・くさつキャンパス(滋賀県草津市)  

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  • エピタキシャルFe3Si薄膜の成長及び磁気特性に及ぼす格子不整合率の影響

    秋山賢輔, 経塚梓, 金子智, 平林康男, 澤田豊, 舟窪浩

    2006年秋季第67回応用物理学会学術講演会  2006.8 

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    Venue:立命館大学びわこ・くさつキャンパス(滋賀県草津市)  

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  • スプレーCVD法によるITO薄膜の非平坦基板への堆積

    近藤剛史, 王美涵, 関成之, 内田孝幸, 大塚正男, 澤田豊, 舟窪浩

    2006年秋季第67回応用物理学会学術講演会  2006.8 

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    Venue:立命館大学びわこ・くさつキャンパス(滋賀県草津市)  

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  • Single-Phase Pb(Zn1/3Nb2/3)O3 Thin Films Grown by Metalorganic Chemical Vapor Deposition: -Effects of Growth Sequence and Kinds of Substrates-

    13th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-XIII)  2006 

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  • Structural Characterization of BiFeO3 Thin Films

    第23回強誘電体応用会議(FMA-23)  2006 

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  • PLD法によるBiFeO3薄膜の合成とアニールによる強誘電性の向上 International conference

    高鉉龍, 脇谷尚樹, 舟窪浩, 佐藤桂輔, 近藤正雄, Jeffrey S. Cross, 丸山研二, 水谷惟恭, 篠崎和夫

    第23回強誘電体応用会議(FMA-23)  2006.5 

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    Venue:コープイン京都  

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  • (100) 一軸配向した(Ba0.5Sr0.5)TiO3 膜のチューナビリテーに及ぼす基板からの歪の効果

    伊藤信一, 掘露伊保龍, 舟窪浩

    2006年秋季第67回応用物理学会学術講演会  2006.8 

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    Venue:立命館大学びわこ・くさつキャンパス(滋賀県草津市)  

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  • CVD法による圧電体圧膜合成と評価

    舟窪浩

    第43回CVD研究会(第17回夏季セミナー)  2006.8 

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    Venue:滋賀県立長浜ドーム宿泊研修館  

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  • 高分解能面内XRD法によるBiFeO3薄膜結晶構造の深さ方向分析

    斎藤啓介, 黒澤利行, 植木定雄, 舟窪浩

    2006年秋季第67回応用物理学会学術講演会  2006.8 

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    Venue:立命館大学びわこ・くさつキャンパス(滋賀県草津市)  

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  • Control of -FeSi2/Si Interface Structure by Cu Layer

    Science and Technology Towards Sustainable Optoelectronics (APAC-SILICIDE 2006)  2006 

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  • BiFeO3-BiScO3薄膜の結晶構造と強誘電特性 International conference

    安井伸太郎, 内田寛, 中木寛, 舟窪浩, 幸田清一郎

    第23回強誘電体応用会議(FMA-23)  2006.5 

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    Venue:コープイン京都  

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  • Domain Structure of Pb(Zr,Ti)O3 Thick Films Near MPB Composition Consisting of Mixture of Tetragonal and Rhombohedral Phases

    15th IEEE International Symposium on the Applications of Ferroelectrics (ISAF2006)  2006 

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  • Strain Relaxation in Eptaxial Thick PbTiO3 Films Grown by MOCVD

    15th IEEE International Symposium on the Applications of Ferroelectrics (ISAF2006)  2006 

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  • 顕微ラマン分光法による強誘電体PZT薄膜中のcドメイン体積比率の評価

    西田謙, 和田俊介, 長田実, 岡本庄司, 上野梨紗子, 舟窪浩, 河東田隆

    2005年春季第52回応用物理学関係連合講演会  2005.3 

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    Venue:埼玉大学  

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  • Growth and Characterization of Degradation-Free c-Axis-Oriented (Cax, Sr1-x)Bi4Ti4O15 Thin-Film Capacitors

    2004 

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  • Step Coverage and Composition of Pb(Zr,Ti)O3 Capacitors Prepared on Sub-Micron Three-Dimensional Trench Structure by Metalorganic Chemical Vapor Deposition

    2004 

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  • Application of Chemical Lithography and Chemical Etching on Fabrication of ZnO Based Microstructures.

    2004 

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  • Enhanced Spontaneous Polarization of Dysprosium-substituted Lead Zirconate Titanate Thin Films by a Chemical Solution Deposition Method.

    2004 MRS Fall Meeting  2004 

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  • Contribution of gas phase reaction to the Pb(Zr,Ti)O3 Film Deposition Prepared by MOCVD

    2004 

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  • Fabrication of micro-patterns on ZnO single crystals by wet-chemical-etching

    2004 

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  • Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-substitution using Various Rare-earth Cations

    2004 MRS Fall Meeting  2004 

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  • In-situ Gas-Phase FT-IR Monitoring of Liquid Delivery MOCVD Process: PZT Films Preparation

    2004 

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  • ランタノイド添加BiFeO3薄膜の作成と特性評価

    The 15th Symposium of The Materials Research Society of Japan  2004 

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  • Contribution of a-domain on the ferroelectric property of (100)/(001)-oriented epitaxial PZT films

    2004 

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  • トレンチ基板上に作製したPZT膜の特性評価

    永井篤史, 南舘純, Chel Jong Choi, Choong-Rae Cho, Young Soo Park, 舟窪浩

    2004.9 

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    Venue:東北学院大学(泉キャンパス)  

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  • SrIrO3エピタキシャル薄膜の成長と評価

    角章弘, 高橋健治, 伊藤信一, 大島憲昭, 秋山賢輔, 斎藤啓介, 舟窪浩

    2004.9 

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    Venue:東北学院大学(泉キャンパス)  

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  • MOCVD法による(Bi1.5Zn0.5)(Zn0.5Nb1.5)O7[BZN]薄膜の作製

    岡浦伸吾, 鈴木宗泰, 舟窪浩

    2004.9 

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    Venue:東北学院大学(泉キャンパス)  

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  • 3次元構造キャパシタ用Ru基積層電極の検討

    南舘純, 永井篤史, 舟窪浩

    2004.9 

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    Venue:東北学院大学(泉キャンパス)  

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  • 電極バッファ層を用いたSi基板上へのPZT膜のマイクロパターニングと構造解析

    横山信太郎, 上野梨紗子, 高橋健治, 岡本庄司, 斎藤啓介, 黒澤利行, 植木定雄, 舟窪浩

    2004.9 

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    Venue:東北学院大学(泉キャンパス)  

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  • 誘電体電極材料SrRuO3の熱的安定性

    伊藤信一, 高橋健治, 岡本庄司, 舟窪浩

    2004.9 

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    Venue:東北学院大学(泉キャンパス)  

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  • MOCVD合成エピタキシャルPMN-PT厚膜の電気特性

    横山信太郎, 岡本賢, 岡本庄司, 斎藤啓介, 松田弘文, 飯島高志, 沖野裕丈, 山本孝, 舟窪浩

    2004.9 

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    Venue:東北学院大学(泉キャンパス)  

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  • Growth of the High Quality Epitaxial Pyrochlore Thin Films Deposited by MOCVD

    2004 

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  • MOCVD合成したPLZT薄膜の特性の組成および結晶方位依存性

    舟窪浩, 本田佳久, 横山信太郎, 岡本庄司

    2004.10 

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    Venue:東京工業大学(大岡山)  

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  • SrIrO3 epitaxial thin films by MOCVD

    2004 

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  • CVD法による(101)/(110)配向β-FeSi2薄膜上へのSi薄膜作製

    秋山賢輔, 金子智, 舟窪浩

    2004.9 

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    Venue:東北学院大学(泉キャンパス)  

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  • MOCVD合成エピタキシャルPZT膜の結晶構造および電気特性

    横山信太郎, 本田佳久, 森岡仁, 岡本庄司, 角章弘, 舟窪浩, 飯島高志, 松田弘文, 斎藤啓介, 沖野裕丈, 山本孝

    2004.9 

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    Venue:北陸先端科学技術大学院大学・石川ハイテク交流センター  

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  • MOCVD合成Si基板上c軸配向Bi層状構造化合物薄膜(m=4)の電気的特性

    坂下幸雄, 及川貴弘, 舟窪浩

    2004.9 

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    Venue:東北学院大学(泉キャンパス)  

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  • 化学溶液法によるエピタキシャル希土類置換Pb(Zr,Ti)O3薄膜の作製

    中木寛, 内田寛, 岡本庄司, 舟窪浩, 幸田清一郎

    2004.9 

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    Venue:東北学院大学(泉キャンパス)  

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  • MOCVD法によるSi基板上への配向制御PZT厚膜の作製と評価

    岡本庄司, 渡辺隆之, 横山信太郎, 浅野剛司, 本田佳久, 森岡仁, 秋山賢輔, 舟窪浩

    2004.3 

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    Venue:東京工科大学  

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  • ビスマス層状誘電体薄膜の誘電率の低バイアス依存性

    鈴木宗泰, 高橋健治, 渡辺隆之, 竹中正, 舟窪浩

    2004.9 

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    Venue:東北学院大学(泉キャンパス)  

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  • 疲労したPZT薄膜における微小部2次元XRD評価

    斎藤啓介, 横山信太郎, 角章弘, 岡本庄司, 黒澤利行, 植木定雄, 舟窪浩

    2004.9 

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    Venue:東北学院大学(泉キャンパス)  

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  • 強誘電体薄膜の歪み-電圧特性から正確なd33を求める測定条件(III)

    沖野裕丈, 中村和生, 松田弘文, 飯島高志, 横山信太郎, 舟窪浩, 山本孝

    2004.9 

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    Venue:東北学院大学(泉キャンパス)  

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  • 正方晶PZT薄膜の特性に及ぼす面内-面外配向の効果

    桑原弥紀, 角章弘, 岡本庄司, 横山信太郎, 舟窪浩

    2004.9 

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    Venue:東北学院大学(泉キャンパス)  

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  • MOCVD法により作製したSi基板上面内配向制御PZT厚膜の特性評価

    岡本庄司, 横山信太郎, 岡本賢, 秋山賢輔, 舟窪浩

    2004.9 

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    Venue:東北学院大学(泉キャンパス)  

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  • MOCVD法による多成分誘電体薄膜の合成

    舟窪 浩, 渡辺隆之, 横山信太郎, 高橋健治, 鈴木宗泰, 永井篤史, 岡本賢, 岡本庄司, 本田佳久

    2004.9 

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    Venue:北陸先端科学技術大学院大学・石川ハイテク交流センター  

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  • Growth of High Quality PLZT Thick Films for Optical Application

    2004 

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  • セラミックスインテグレーションのための酸化亜鉛単結晶表面の微細加工 ―湿式エッチング挙動の検討―

    高橋健治, 大橋直樹, 舟窪浩, 羽田肇

    2004.9 

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    Venue:北陸先端科学技術大学院大学・石川ハイテク交流センター  

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  • 薄膜コンデンサ材料としてのc軸配向Bi層状構造化合物薄膜の開発

    坂下幸雄, 及川貴弘, 小嶌隆志, 舟窪浩

    2004.9 

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    Venue:北陸先端科学技術大学院大学・石川ハイテク交流センター  

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  • エピタキシャル薄膜を用いたPZT薄膜の結晶構造と特性評価

    舟窪浩, 及川貴弘, 斎藤啓介

    電子材料研究会  2004.6 

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    Venue:東京工業大学(大岡山)  

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  • c軸配向(Ca,Sr)Bi4Ti4O15薄膜の面内配向制御

    高橋健治, 鈴木宗泰, 岡本庄司, 坂下幸雄, Haydn Chen, 舟窪浩

    2004.9 

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    Venue:東北学院大学(泉キャンパス)  

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  • 菱面体晶Pb(Zr,Ti)O3薄膜のヒステリシス形状の考察

    2004 

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  • 3次元構造PZTキャパシタの作製と段差被覆性

    永井篤史, 浅野剛司, Chel Jong Choi, Choong-Rae Cho, Young Soo Park, 舟窪浩

    2004.3 

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    Venue:東京工科大学  

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  • c軸配向(Ca,Sr)Bi4Ti4O15薄膜の電気特性に及ぼす面内・面外配向の効果

    高橋健治, 鈴木宗泰, 岡本庄司, 舟窪浩

    2004.9 

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    Venue:東北学院大学(泉キャンパス)  

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  • 方位制御したリラクサー型強誘電体Pb(Mg1/3Nb2/3)O3高品質エピタキシャル厚膜のMOCVD合成

    岡本賢, 横山信太郎, 岡本庄司, 角章弘, 斎藤啓介, 内田寛, 幸田清一郎, 舟窪浩

    2004.9 

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    Venue:東北学院大学(泉キャンパス)  

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  • サイトエンジニアリングによる欠陥制御と自発分極の相関

    渡辺隆之, 森岡仁, 舟窪浩, 長田実

    2004.3 

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    Venue:東京工科大学  

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  • エピタキシャルPLZT薄膜の光学特性及びその構造

    本田佳久, 横山信太郎, 岡本庄司, 舟窪浩

    2004.3 

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    Venue:東京工科大学  

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  • Electrical Properties of Polar-Axis-Oriented Tetragonal Pb(Zr,Ti)O3 Films

    2004 

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  • 湿式エッチングによる酸化亜鉛単結晶表面の微細加工

    高橋健治, 大橋直樹, 坂口勲, 菱田俊一, 舟窪浩, 羽田肇

    2004.3 

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    Venue:湘南工科大学  

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  • MOCVD法によりSi基板上で配向制御したPb(Zr,Ti)O3厚膜の電気特性の配向依存性

    岡本庄司, 横山信太郎, 本田佳久, 浅野剛司, 舟窪浩, 齋藤啓介

    2004.5 

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    Venue:コープイン京都  

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  • 希土類置換PZT薄膜の電気特性評価

    中木寛, 内田寛, 横山信太郎, 舟窪浩, 幸田清一郎

    2004.5 

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    Venue:コープイン京都  

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  • Characterization and Crystallizatoin of the Epitaxial Growth of Pyrochlore Structure

    2004 

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  • Thickness Downscaling of Pb(Zr,Ti)O3 Films to Sub-100 nm at Low Depositon Temperature by Metalorganic Chemical Vapor Deposition

    2004 

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  • Performance Comparison of PZT and Bi4Ti3O12-Based Ferroelectric Thin Films for FERAM Application

    E-MRS Spring Meeting 2004, SYMPOSIUM D, Functional oxides for advanced semiconductor technologies  2004 

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  • Crystal Orientation and Compositional Dependences of Field-Induced Strain on Epitaxial PZT Thick Films Grown by MOCVD

    2004 

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  • 微小部X線回折装置を用いた白金ドット電極下PZT薄膜中の応力分布解析

    斎藤啓介, 浅野剛司, 森岡仁, 横山信太郎, 黒沢利行, 植木定雄, 舟窪浩

    2004.3 

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    Venue:東京工科大学  

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  • 強誘電体薄膜の歪み-電圧特性から正確なd33を求める測定条件(II)

    沖野裕丈, 松田弘文, 飯島高志, 横山信太郎, 舟窪浩, 山本孝

    2004.3 

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    Venue:東京工科大学  

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  • MOCVD用Ru錯体(DER)によるRuO2薄膜の成膜

    小菅博明, 古川泰志, 渋田見哲夫, 大島憲昭, 舟窪浩

    2004.3 

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    Venue:東京工科大学  

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  • 溶液気化MOCVD-Pb(Zr,Ti)O3薄膜の析出機構に及ぼす気相反応の影響

    浅野剛司, 永井篤史, 舟窪浩

    2004.3 

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    Venue:東京工科大学  

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  • エピタキシャルPZT薄膜の電気特性に及ぼす歪みの効果

    森岡 仁, 角章弘, 岡本庄司, 横山信太郎, 渡辺隆之, 斎藤啓介, 舟窪浩

    2004.3 

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    Venue:東京工科大学  

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  • エピタキシャルPZT膜の正方晶・菱面体晶共存が電気的特性に及ぼす効果

    横山信太郎, 本田佳久, 森岡仁, 岡本庄司, 飯島高志, 松田弘文, 斎藤啓介, 沖野裕丈, 山本孝, 舟窪浩

    2004.3 

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    Venue:東京工科大学  

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  • c軸配向ビスマス層状構造誘電体薄膜キャパシタの特性に及ぼす強誘電性の効果

    鈴木宗泰, 舟窪浩, 渡辺隆之, 竹中正

    2004.3 

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    Venue:東京工科大学  

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  • 絶縁基板上β-FeSi2薄膜の電気伝導特性評価

    秋山賢輔, 金子智, 木村武, 西山伸, 服部豪夫, 大橋直樹, 舟窪浩

    2004.3 

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    Venue:東京工科大学  

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  • 菱面体晶Pb(Zr,Ti)O3薄膜のヒステリシス形状の考察

    角章弘, 森岡仁, 本田佳久, 横山信太郎, 岡本庄司, 舟窪浩

    2004.3 

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    Venue:東京工科大学  

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  • 低温合成SrRuO3バッファを用いた溶液気化MOCVD-PZT薄膜の(111)配向制御

    浅野剛司, 岡本庄司, 舟窪浩

    2004.3 

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    Venue:東京工科大学  

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  • Step Coverage and Composition of Pb(Zr,Ti)O3 Capacitors Prepared on Sub-Micron Three-Dimensional Trench Structure by Metalorganic Chemical Vapor Deposition International conference

    Atsushi Nagai, Gouji Asano, Jun Minamidate, Chel Jong Choi, Choong-Rae Cho, Youngsoo Park, Hiroshi Funakubo

    2004.12 

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  • Enhanced Spontaneous Polarization of Dysprosium-substituted Lead Zirconate Titanate Thin Films by a Chemical Solution Deposition Method. International conference

    Hiroshi Uchida, Hiroshi Nakaki, Shoji Okamoto, Shintaro Yokoyama, Hiroshi Funakubo, Seiichiro Koda

    2004 MRS Fall Meeting  2004.12 

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    Venue:Hynes Convention Center and Sheraton Boston Hotel, Boston, MA, U.S.A.  

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  • Growth and Characterization of Degradation-Free c-Axis-Oriented (Cax, Sr1-x)Bi4Ti4O15 Thin-Film Capacitors International conference

    Kenji Takahashi, Shoji Okamoto, Yukio Sakashita, Haydn Chen, Hiroshi Funakubo

    2004.12 

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  • 鉄シリサイド薄膜のSi上および異種基板上への結晶成長

    舟窪浩, 秋山賢輔, 木村武, 金子智

    2004.3 

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    Venue:東京工科大学  

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  • Effect of deposition temperature on the characteristics of hafnium oxide films deposited by metalorganic chemical vapor deposition using amide precursor

    J. Mater. Res  2004 

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  • 分極軸配向ネオジウム置換チタン酸ビスマス多結晶薄膜の合成と物性

    倉地雅大, 松田弘文, 飯島高志, 内田寛, 幸田清一郎, 渡辺隆之, 舟窪浩

    2004.3 

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    Venue:東京工科大学  

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  • 完全分極軸配向した薄膜を用いた正方晶PZTの自発分極値の直接測定

    舟窪浩, 森岡仁, 横山信太郎, 及川貴弘, 斎藤啓介

    日本セラミックス協会2004年年会  2004.3 

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    Venue:湘南工科大学  

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  • Contribution of a-domain on the ferroelectric property of (100)/(001)-oriented epitaxial PZT films International conference

    Hiroshi Funakubo, Hitoshi Morioka, Risako Ueno, Shintaro Yokoyama, Keisuke Saito

    2004.12 

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    Venue:Hynes Convention Center and Sheraton Boston Hotel, Boston, MA, U.S.A.  

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  • Application of Chemical Lithography and Chemical Etching on Fabrication of ZnO Based Microstructures. International conference

    Kenji Takahashi, Takeshi Ohgaki, Hiroshi Funakubo, Hajime Haneda, Naoki Ohashi

    2004.12 

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    Venue:Hynes Convention Center and Sheraton Boston Hotel, Boston, MA, U.S.A.  

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  • エピタキシャル成長PLZT厚膜の特性評価

    本田佳久, 横山信太郎, 舟窪浩

    2004.1 

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    Venue:長岡グランドホテル(長岡市)  

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  • Preparation of Lanthanid-Substituted BiFeO3 Thin Films and Their Properties

    上野梨紗子, 大門正機, 中木寛, 内田寛, 幸田清一郎, HIROSHI FUNAKUBO

    2004.12 

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  • Crystal Orientation and Compositional Dependences of Field-Induced Strain on Epitaxial PZT Thick Films Grown by MOCVD International conference

    Shintaro Yokoyama, Yoshihisa Honda, Hitoshi Morioka, Hiroshi Funakubo, Takashi Iijima, Hirofumi Matsuda, Keisuke Saito

    2004.4 

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    Venue:Hotel Hyundai Gyeongju, Gyeongju, Korea  

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  • Contribution of gas phase reaction to the Pb(Zr,Ti)O3 Film Deposition Prepared by MOCVD International conference

    Gouji Asano, Tsukasa Satake, Kunio Ohtsuki, Hiroshi Funakubo

    2004.11 

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    Venue:Howard International House, Taipei, Taiwan  

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  • Fabrication of micro-patterns on ZnO single crystals by wet-chemical-etching International conference

    Kenji Takahashi, Naoki Ohashi, Hiroshi Funakubo, Hajime Haneda

    2004.10 

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    Venue:パレスホテル箱根  

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  • Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-substitution using Various Rare-earth Cations International conference

    Hiroshi Nakaki, Hiroshi Uchida, Shoji Okamoto, Shintaro Yokoyama, Hiroshi Funakubo, Seiichiro Koda

    2004 MRS Fall Meeting  2004.12 

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  • In-situ Gas-Phase FT-IR Monitoring of Liquid Delivery MOCVD Process: PZT Films Preparation International conference

    Hiroshi Funakubo, Gouji Asano, Kazuaki Tonari, Yukichi Takamatsu, Kunio Ohtsuki, Tsukasa Satake

    2004.11 

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    Venue:Howard International House, Taipei, Taiwan  

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  • Growth of High Quality PLZT Thick Films for Optical Application International conference

    Hiroshi Funakubo, Yoshihisa Honda, Shintaro Yokoyama, Keisuke Saito

    2004.8 

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  • Performance Comparison of PZT and Bi4Ti3O12-Based Ferroelectric Thin Films for FERAM Application International conference

    Hiroshi Funakubo, Takayuki Watanabe, Hitoshi Morioka, Hiroshi Uchida, Seiichiro Koda, Keisuke Saito

    E-MRS Spring Meeting 2004, SYMPOSIUM D, Functional oxides for advanced semiconductor technologies  2004.5 

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    Venue:Palais de la Musique et des Congr&egrave;s, Strasbourg (France)  

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  • SrIrO3 epitaxial thin films by MOCVD International conference

    Akihiro Sumi, Kenji Takahashi, Kim Yong Kwan, N. Oshima, Kensuke Akiyama, Keisuke Saito, Hiroshi Funakubo

    2004.10 

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    Venue:パレスホテル箱根  

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  • Growth of the High Quality Epitaxial Pyrochlore Thin Films Deposited by MOCVD International conference

    Muneyasu Suzuki, Takayuki Watanabe, Tadashi Takenaka, Hiroshi Funakubo

    2004.10 

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    Venue:Inuyama Internatinal Sightseeing Center “FREUDE”, 犬山(愛知)  

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  • Ba/Ta比を制御したBaBi2Ta2O9薄膜の特性評価

    鈴木宗泰, 高橋健治, 渡辺隆之, 竹中正, 舟窪浩

    第25回エレクトロセラミックス研究討論会  2005.10 

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    Venue:東京工業大学(大岡山)  

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  • Temperature Dependency of P-E hysteresis Loops of Rhombohedral PZT films

    12th US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2005 

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  • 希土類イオン修飾されたペロブスカイト基酸化物強誘電体薄膜の電気特性

    内田 寛, 中木 寛, 舟窪 浩, 幸田清一郎

    第25回エレクトロセラミックス研究討論会  2005.10 

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    Venue:東京工業大学(大岡山)  

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  • Thickness Downscaling of Pb(Zr,Ti)O3 Films to Sub-100 nm at Low Depositon Temperature by Metalorganic Chemical Vapor Deposition International conference

    Atsushi Nagai, Hitoshi Morioka, Gouji Asano, Atsushi Saiki, Hiroshi Funakubo

    2004.4 

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    Venue:Hotel Hyundai Gyeongju, Gyeongju, Korea  

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  • Electrical Properties of Polar-Axis-Oriented Tetragonal Pb(Zr,Ti)O3 Films International conference

    Hiroshi Funakubo, Hitoshi Morioka, Akihiro Sumi, Keisuke Saito

    2004.4 

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    Venue:Hotel Hyundai Gyeongju, Gyeongju, Korea  

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  • Characterization and Crystallizatoin of the Epitaxial Growth of Pyrochlore Structure International conference

    Muneyasu Suzuki, Takayuki Watanabe, Hiroshi Funakubo, Tadashi Takenaka

    2004.4 

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    Venue:Hotel Hyundai Gyeongju, Gyeongju, Korea  

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  • Enhancement of Insulating and Ferroelectric Properties of Bismuth Ferrite Thin Films by Ionsubstitution

    12th US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2005 

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  • Control Factor of Squareness in P-E Hsyteresis of MOCVD-PZT Films

    2005 

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  • Effect of deposition temperature on the characteristics of hafnium oxide films deposited by metalorganic chemical vapor deposition using amide precursor

    J. Mater. Res  2004 

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  • Evaluation for Polar c-Domain Volume in Tetragonal PbZrxTi1-xO3 Thin Films Using Polarized Raman Spectroscopy

    12th US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2005 

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  • MOCVD合成エピタキシャルPMN-PT膜と単結晶との誘電特性比較

    岡本 賢, 横山信太郎, 内田 寛, 幸田清一郎, 斉藤啓介, 沖野裕丈, 山本 孝, 西田 謙, 河東田 隆, 舟窪 浩

    2005年秋季第66回応用物理学会学術講演会  2005.9 

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    Venue:徳島大学  

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  • MOCVD合成エピタキシャルPZTおよびPMN-PT厚膜の特性比較

    横山信太郎, 岡本 賢, 斎藤啓介, 飯島高志, 沖野裕丈, 山本 孝, 舟窪 浩

    2005年秋季第66回応用物理学会学術講演会  2005.9 

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    Venue:徳島大学  

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  • MOCVD法により作製したエピタキシャルBiFeO3薄膜の結晶構造及び電気特性評価

    上野梨紗子, 岡浦伸吾, 近藤正雄, 丸山研二, 舟窪 浩, 斉藤啓介

    2005年秋季第66回応用物理学会学術講演会  2005.9 

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    Venue:徳島大学  

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  • 高分解能XRDを用いたBiFeO3薄膜の結晶構造解析

    斎藤啓介, 上野梨紗子, 黒澤利行, 植木定雄, 舟窪 浩

    2005年秋季第66回応用物理学会学術講演会  2005.9 

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    Venue:徳島大学  

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  • Si(100)上β-FeSi2の結晶成長及びフォトルミネッセンス特性に及ぼすCuの影響

    秋山賢輔, 小国 琢, 澤田 豊, 舟窪 浩, 寺井慶和, 前田佳均

    2005年秋季第66回応用物理学会学術講演会  2005.9 

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    Venue:徳島大学  

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  • 希土類置換ビスマスフェライトの相転移挙動と強誘電特性

    内田 寛, 安井伸太郎, 上野梨紗子, 舟窪 浩, 幸田清一郎

    2005年秋季第66回応用物理学会学術講演会  2005.9 

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    Venue:徳島大学  

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  • 低電圧駆動を目指した正方晶PZT(111)一軸配向膜の薄膜化

    桑原弥紀, 舟窪 浩

    2005年秋季第66回応用物理学会学術講演会  2005.9 

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    Venue:徳島大学  

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  • PZT上部電極用SrRuO3薄膜の低温MOCVD合成

    南舘 純, 永井篤史, 伊藤信一, 桑原弥紀, 高橋健治, June-Mo Koo, Sangmin Shin, Sukpil Kim, Youngsoo Park, 舟窪 浩

    2005年秋季第66回応用物理学会学術講演会  2005.9 

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    Venue:徳島大学  

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  • 顕微ラマン分光法によるDy置換PZT薄膜のサイト選択性の評価

    和田俊輔, 西田 謙, 長田 実, 内田 寛, 中木 寛, 幸田清一郎, 舟窪 浩, 河東田 隆

    2005年秋季第66回応用物理学会学術講演会  2005.9 

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    Venue:徳島大学  

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  • (100)高配向したエピタキシャルPb(Zr,Ti)O3薄膜のドメイン構造

    Y.K. Kim, 森岡 仁, 舟窪 浩

    2005年秋季第66回応用物理学会学術講演会  2005.9 

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    Venue:徳島大学  

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  • In-Plane Orientation Dependence on the Electrical Properties of (100)/(001)-Oriented Pb(Zr, Ti)O3 Films Grown on (100)Si and (100)SrTiO3 Substrates

    2005 

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  • c軸配向エピタキシャルSrBi4Ti4O15薄膜の誘電特性における面内応力の効果

    高橋健治, 鈴木宗泰, 小嶌隆志, 舟窪 浩

    2005年秋季第66回応用物理学会学術講演会  2005.9 

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    Venue:徳島大学  

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  • (Bi1.5Zn0.5)(Zn0.5Nb1.5)[BZN]薄膜の誘電特性における結晶性およびアニール依存

    岡浦伸吾, 鈴木宗泰, 内田 寛, 幸田清一郎, 舟窪 浩

    2005年秋季第66回応用物理学会学術講演会  2005.9 

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    Venue:徳島大学  

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  • ビスマス層状構造誘電体の結晶構造異方性を利用した誘電特性の制御

    鈴木宗泰, 高橋健治, 渡辺隆之, 竹中 正, 舟窪 浩

    2005年秋季第66回応用物理学会学術講演会  2005.9 

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    Venue:徳島大学  

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  • c軸配向エピタキシャルSrBi2Ta2O9薄膜の成長機構

    高橋健治, 鈴木宗泰, 吉本 護, 舟窪 浩

    2005年秋季第66回応用物理学会学術講演会  2005.9 

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    Venue:徳島大学  

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  • Growth of Flat-surface β-FeSi2 Epitaxial Films on (100) and (111) Si substrates by MOCVD

    16th American Conference on Crystal Growth and Epitaxy  2005 

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  • 高・強誘電体における歪みの効果

    舟窪浩

    第9回シリサイド系半導体夏の学校  2005.7 

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    Venue:湯河原万葉荘  

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  • SrRuO3バッファにより(111)方向に配向制御された(Ba0.5,Sr0.5)TiO3薄膜の特性評価

    伊藤信一, 高橋健治, 掘露伊保龍, 舟窪 浩

    2005年秋季第66回応用物理学会学術講演会  2005.9 

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    Venue:徳島大学  

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  • Structural Modulation in Bismuth Cuprate Supeconductor Observed by X-ray Reciprocal Space Mapping

    16th American Conference on Crystal Growth and Epitaxy  2005 

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  • MOCVD成長エピタキシャルチタン酸鉛厚膜で観察される新規ドメイン構造

    中木 寛, 金 容寛, 横山信太郎, 舟窪 浩

    2005年秋季第66回応用物理学会学術講演会  2005.9 

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    Venue:徳島大学  

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  • 希土類元素置換PZT薄膜の結晶構造と強誘電特性

    内田寛, 中木寛, 西田謙, 長田実, 舟窪浩, 幸田清一郎

    第22回強誘電体応用会議(FMA-22)  2005.5 

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    Venue:コープイン京都  

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  • Photoluminescence Enhancement of beta-FeSi2 by Si/beta-FeSi2/Si Double-Heterostructure

    2005 

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  • MOCVD法による立方晶Bi1.5Zn1.0Nb1.5O7(BZN)エピタキシャル薄膜の作製とその電気特性

    岡浦伸吾, 鈴木宗泰, 岡本庄司, 内田寛, 幸田清一郎, 舟窪浩

    第22回強誘電体応用会議(FMA-22)  2005.5 

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    Venue:コープイン京都  

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  • 軟X線分光による(Pb,La)(Zr,Ti)O3薄膜の電子構造

    樋口透, 塚本桓世, 服部武志, 本田佳久, 横山信太郎, 舟窪浩

    第22回強誘電体応用会議(FMA-22)  2005.5 

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    Venue:コープイン京都  

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  • Impact of 90°-Domain Switching On High d33 in (100)-Oriented Epitaxial Pb(ZrxTi1-x)O3 Films Grown On (100)SrRuO3/(100)SrTiO3 Substrates

    2005 

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  • Compositional Dependence of Piezoelectric Response on Epitaxial Pb(Zr1-x, Tix)O3 and (1-x)Pb(Mg1/3Nb2/3)O3-(x)PbTiO3 Thick Films grown by MOCVD

    2005 

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  • Structural And Electrical Properties Of BiFeO3 Thin Films

    2005 

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  • A New Method To Characterize A Relative Volume To The C-Domain In PZT Films Based On The Raman Spectra

    2005 

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  • MOCVDプロセスにおけるin-situモニタリングの重要性と今後の展望

    舟窪浩

    株式会社堀場製作所、堀場雅夫賞審査員による講演会  2005.6 

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    Venue:株式会社堀場製作所  

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  • Low critical current density in BiFeO3 thin films fabricating by chemical solution method

    第22回強誘電体応用会議(FMA-22)  2005 

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  • Ferroelectric and Electrode Fabrication for 3D structure

    2005 

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  • Origin of Size Effect Free Characteristics of Bismuth Layer Structured Dielectrics Thin Films

    2005 

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  • Ferroelectric Properties of Rare-Earth Substituted Bismuth Iron Oxide Thin Films Fabricated By Chemical Solution Deposition Method

    The International Symposium on Integrated Ferroelectrics (ISIF 2005)  2005 

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  • Preparation of 3D Ferroelectric Capacitor Using MOCVD-Pb(Zr, Ti)O3 Film

    2005 

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  • 化学溶液法による希土類置換ビスマスフェライト薄膜の作製

    内田 寛, 上野梨紗子, 中木 寛, 近藤正雄, 丸山研二, 舟窪 浩, 幸田清一郎

    2005年春季第52回応用物理学関係連合講演会  2005.3 

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    Venue:埼玉大学  

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  • エピタキシャルFe3Si薄膜の作製と構造解析

    秋山賢輔, 金子 智, 木村 武, 岡本庄司, 舟窪 浩

    2005年春季第52回応用物理学関係連合講演会  2005.3 

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    Venue:埼玉大学  

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  • 軟X線分光によるエピタキシャルPZT薄膜の電子構造

    樋口 透, 塚本桓世, 服部武志, 本田佳久, 舟窪 浩

    2005年春季第52回応用物理学関係連合講演会  2005.3 

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    Venue:埼玉大学  

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  • Performance Of SrRu O3/Ru Tailored Electrodes For 3D Ferroelectric Capacitor

    2005 

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  • Dielectric Property of BST Films Prepared on SrRu O3/Pt Hybrid Electrode

    2005 

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  • Effect Of In-Plane Orientations And Strain On Electrical Properties Of (111)-Oriented Tetragonal PZT Thin Films

    2005 

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  • 正方晶PZT(111)一軸配向薄膜の低温成膜と評価

    桑原弥紀, 角 章弘, 岡本庄司, 永井篤史, 鉾 宏真, クロスジェフリー, 舟窪 浩

    2005年春季第52回応用物理学関係連合講演会  2005.3 

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    Venue:埼玉大学  

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  • 強誘電体薄膜の歪み-電圧特性から正確なd33を求める測定条件(IV)

    沖野裕丈, 中村和生, 松田弘文, 飯島高志, 横山信太郎, 舟窪 浩, 山本 孝

    2005年春季第52回応用物理学関係連合講演会  2005.3 

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    Venue:埼玉大学  

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  • MOCVD法によるエピタキシャルPZN-PT膜の合成と特性評価

    横山信太郎, 岡本 賢, 岡本庄司, 斎藤啓介, 内田 寛, 幸田清一郎, 舟窪 浩

    2005年春季第52回応用物理学関係連合講演会  2005.3 

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    Venue:埼玉大学  

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  • 高品質エピタキシャルPb(Mg1/3Nb2/3)O3膜を用いたリラクサー特性の膜厚依存性

    岡本 賢, 横山信太郎, 岡本庄司, 内田 寛, 幸田清一郎, 舟窪 浩

    2005年春季第52回応用物理学関係連合講演会  2005.3 

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    Venue:埼玉大学  

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  • PZT膜のヒステリシス形状の温度依存性

    角 章弘, 岡本庄司, 横山信太郎, 本田佳久, 舟窪 浩

    2005年春季第52回応用物理学関係連合講演会  2005.3 

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    Venue:埼玉大学  

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  • PZT厚膜の大きな圧電特性発現への新提案

    岡本庄司, 横山信太郎, 岡本 賢, 金 容寛, 秋山賢輔, 斎藤啓介, 長田 実, 舟窪 浩

    2005年春季第52回応用物理学関係連合講演会  2005.3 

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    Venue:埼玉大学  

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  • 下部電極上に堆積した3次元構造PZT膜の評価

    永井篤史, 南舘 純, Chel Jong Choi, June-Mo Koo, Youngsoo Park, 舟窪 浩

    2005年春季第52回応用物理学関係連合講演会  2005.3 

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    Venue:埼玉大学  

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  • 高いd33のためのエピタキシャルPb(Zr,Ti)O3薄膜のドメインエンジニアリング

    Y.K. Kim, R. Ueno, H. Morioka, S. Yokoyama, S. Okamoto, M. Osada, H. Funakubo

    2005年春季第52回応用物理学関係連合講演会  2005.3 

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    Venue:埼玉大学  

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  • MOCVD法によるBi-Fe-O薄膜の作製

    上野梨紗子, 岡浦慎吾, 岡本庄司, 近藤正雄, 丸山研二, 舟窪 浩

    2005年春季第52回応用物理学関係連合講演会  2005.3 

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    Venue:埼玉大学  

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  • 3次元構造PZTキャパシタ用上部電極の検討

    南舘 純, 永井篤史, June-Mo Koo, Choong-Rae Cho, SukPil Kim, Youngsoo Park, 舟窪 浩

    2005年春季第52回応用物理学関係連合講演会  2005.3 

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  • Evaluation for Polar c-Domain Volume in Tetragonal PbZrxTi1-xO3 Thin Films Using Polarized Raman Spectroscopy International conference

    Ken Nishida, M. Osada, S. Wada, S. Okamoto, R. Ueno, H. Funakubo, T. Katoda

    12th US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2005.11 

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    Venue:Annapolis, Maryland, USA  

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  • Enhancement of Insulating and Ferroelectric Properties of Bismuth Ferrite Thin Films by Ionsubstitution International conference

    Hiroshi Uchida, Shintaro Yasui, Risako Ueno, Hiroshi Funakubo, Seiichiro Koda

    12th US-Japan Seminar on Dielectric and Piezoelectric Ceramics  2005.11 

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    Venue:Annapolis, Maryland, USA  

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  • Controlling the domain structures of epitaxial Pb(Zr,Ti)O3 film on SrRuO3(001)/SrTiO3(001) substrates

    The 43rd Symposium on Basic Science of Ceramics  2005 

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  • 酸化物薄膜の作製と評価の最前線-測定ツールの活用が研究・開発スピードを決める-

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    薄膜分析技術セミナー  2005.1 

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    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:株式会社堀場製作所(東京セールスオフィス)  

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  • Control Factor of Squareness in P-E Hsyteresis of MOCVD-PZT Films International conference

    Hiroshi Funakubo, Akihiro Sumi, Shoji Okamoto, Yoshihisa Honda, Shintaro Yokoyama

    2005.11 

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    Venue:Hynes Convention Center and Sheraton Boston Hotel, Boston, MA, U.S.A.  

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  • Thermoelectric property of MxSr1-xSi2 (M = Ca, Ba) film prepared by co-sputtering method International conference

    Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo

    The Fifth Asia-Pacific Conference on Semiconducting Silicates and Related Materials  2019.7 

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  • 二元同時スパッタ法で作製したAeSi2膜の作製

    青山 航大, 清水 荘雄, 倉持 豪人, 召田 雅実, 秋池 良, 井手 啓介, 片瀬 貴義, 神谷 利夫, 木村 好里, 舟窪 浩

    第80回応用物理学会秋季学術講演会  2019.9 

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  • Expansion of Ba and Ca solubility limit into SrSi2 thin film and their thermoelectric properties International conference

    Kodai Aoyama, Takao Shimizu, Hideto Kuramochi, Masami Mesuda, Ryo Akiike, Keisuke Ide, Takayoshi Katase, Toshio Kamiya, Yoshisato Kimura, Hiroshi Funakubo

    2019 MRS Fall Meeting & Exhibit  2019.12 

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    Venue:Boston  

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  • (Ba,Sr,Ca)Si2膜の作製と熱電特性評価

    青山航大, 清水荘雄, 倉持豪人, 召田雅実, 秋池良, 片瀬貴義, 木村好里, 舟窪浩

    第21回 日本熱電学会学術講演会  2024.9 

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  • Control of &#61538;-FeSi2/Si Interface Structure by Cu Layer International conference

    K. Akiyama, M. Itakura, S. Kaneko, H. Funakubo, Y. Maeda

    Science and Technology Towards Sustainable Optoelectronics (APAC-SILICIDE 2006)  2006.7 

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    Language:English   Presentation type:Poster presentation  

    Venue:The Clock Tower Centennial International Hall, Kyoto University, Kyoto, Japan,  

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  • Control of &szlig;-FeSi2/Si Interface Structure by Cu Thin Layer International conference

    Kensuke Akiyama, Masaru Itakura, Satoru Kaneko, Hiroshi Funakubo, Yoshihito Maeda

    The 16th International Microscopy Congress (IMC16)  2006.9 

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    Venue:Sapporo Convention Center, Sapporo, Japan,  

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  • 2次元ナノレイヤー積層による新規誘電特性の発現-サイズ効果フリー高誘電体の創製-

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    JSTさきがけ合同研究報告会  2006.12 

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    Language:Japanese   Presentation type:Poster presentation  

    Venue:東京大学武田先端知ビル武田ホール(東京都文京区)  

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  • Evaluation of thickness dependence on ferroelectricity in (Al,Sc)N-based FeRAM

    Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Nana Sun, Yoshiko Nakamura, Kazuki Okamoto, Hiroshi Funakubo

    The 85th JSAP Autumn Meeting  2024.9 

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  • Dependence of crystallinity and ferroelectricity on Sc content in thin (Al1-xScx)N films

    Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Nana Sun, Yoshiko Nakamura, Kazuki Okamoto, Hiroshi Funakubo

    The 72nd JSAP Spring Meeting  2025.3 

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  • Effects of thickness scaling on switching kinetics in (Al,Sc)N ferroelectric films

    Nana Sun, Kazuki Okamoto, Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Hiroshi Funakubo

    The 72nd JSAP Spring Meeting  2025.3 

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  • High stability of ferroelectricity against hydrogen gas in (Al,Sc)N thin films

    Nana Sun, Kazuki Okamoto, Shinnosuke Yasuoka, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Soshun Doko, Hiroshi Funakubo

    The 71st JSAP Spring Meeting  2024.3 

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  • Influence of thickness for Pt bottom electrode on film properties of AlScN

    Soshun Doko, Naoko Matsui, Toshikazu Irisawa, Koji Tsunekawa, Yoshiko Nakamura, Kazuki Okamoto, Hiroshi Funakubo

    The 71st JSAP Spring Meeting  2024.3 

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  • Development of novel Pb, Li, Na and K-free piezoelectric materials for Si-based MEMS application International conference

    HIROSHI FUNAKUBO, Shintaro Yasui, Yazawa, K., Nagata, J., Oikawa, T., Yamada, T., Uchida, H.

    2012 

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