Updated on 2026/03/28

写真a

 
OHTOMO AKIRA
 
Organization
School of Materials and Chemical Technology Professor
Title
Professor
External link

News & Topics

Degree

  • Master of Engineering ( Tokyo Institute of Technology )

  • Ph. D. of Engineering ( Tokyo Institute of Technology )

Research Interests

  • Solid-State Chemistry, Materials Science, Crystal Engineering, Solid-State Physics, Device Engineering, Oxide Electronics

  • Quantum well devices

  • Field-effect transistors

  • 酸化物エレクトロニクス

  • 量子井戸デバイス

  • 電界効果トランジスタ

  • Oxide electronics

Research Areas

  • Nanotechnology/Materials / Functional solid state chemistry

  • Nanotechnology/Materials / Applied physical properties

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

Education

  • Tokyo Institute of Technology   Interdisciplinary Granduate School of Science and Engineering   Department of Innovative and Engineered Materials

    1997.4 - 2000.3

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    Country: Japan

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  • Tokyo Institute of Technology   Graduate School, Division of Integrated Science and Engineering   Department of Innovative and Engineered Materials

    - 2000

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  • Tokyo Institute of Technology   Graduate School, Division of Integrated Science and Engineering   Department of Engineering Materials

    - 1998

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  • Tokyo Institute of Technology   Interdisciplinary Granduate School of Science and Engineering   Department of Engineering Materials

    1995.4 - 1997.3

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    Country: Japan

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  • Tokyo Institute of Technology   Faculty of Engineering   Department of Inorganic Materials

    1991.4 - 1995.3

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    Country: Japan

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Research History

  • Institute of Science Tokyo   School of Materials and Chemical Technology, Department of Chemical Science and Engineering   Professor

    2024.10

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    Country:Japan

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  • Department of Chemical Science and Engineering, Tokyo Institute of Technology   Professor

    2016.4 - 2024.9

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  • Graduate School of Science and Engineering, Tokyo Institute of Technology   Professor

    2009.11 - 2016.3

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  • Institute for Materials Research, Tohoku University   Associate Professor

    2009.9 - 2009.10

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  • Institute for Materials Research, Tohoku University   Assistant Professor

    2007.4 - 2009.9

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  • Japan Science and Technology Agency, PRESTO

    2003 - 2007

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  • 科学技術振興機構さきがけ研究(個人型)「ナノと物性」領域

    2003 - 2007

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  • Institute for Materials Research, Tohoku University   Research Associate

    2002.6 - 2007.3

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  • COMET, National Institute for Research in Inorganic Materials

    2002 - 2006

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  • 物質・材料研究機構COMETプロジェクト

    2002 - 2006

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  • Bell Laboratories, Lucent Technology   Department of Materials Physics   Postdoctral Member of Technical Stuff

    2000.4 - 2002.5

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  • Lucent Technologies, Bell Laboratories

    2000 - 2002

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Professional Memberships

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Committee Memberships

  • 応用物理学会   プログラム編集員  

    2007   

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    Committee type:Academic society

    応用物理学会

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Papers

  • Au-Nanoparticle-Assisted Pulsed-Laser Deposition of Ga2(O1–xSx)3 Epitaxial Films

    Weiqi Zhou, Akira Ohtomo

    Crystal Growth & Design   2026.2

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acs.cgd.5c01584

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  • Strongly Correlated van der Waals Oxide: 2H-NbO2

    Aya Sato, Takuto Soma, Hiroshi Kumigashira, Kohei Yoshimatsu, Akira Ohtomo

    ACS Nano   2025.7

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsnano.5c05513

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  • Structural and electrical properties of (100) β-(ScxGa1−x)2O3/Ga2O3 heterojunctions

    Kazuki Koreishi, Takuto Soma, Akira Ohtomo

    Journal of Applied Physics   2025.7

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0277701

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  • Epitaxial growth and band offsets of β-(Sc<inf>x</inf>Ga<inf>1−</inf><inf>x</inf>)<inf>2</inf>O<inf>3</inf> thin films grown on (100) β-Ga<inf>2</inf>O<inf>3</inf> substrate Reviewed International journal

    Kazuki Koreishi, Takuto Soma, Hiroshi Kumigashira, Akira Ohtomo

    Applied Physics Letters   125 ( 15 )   6   2024.10

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:AIP Publishing  

    DOI: 10.1063/5.0226675

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  • Electrochemical modulation of electronic states in strongly correlated transition-metal oxides Invited Reviewed International journal

    Akira Ohtomo, Takuto Soma, Kohei Yoshimatsu

    JSAP Review   Volume 2022 ( 1 )   220202-1 - 220202-8   2022.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.11470/jsaprev.220202

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  • Electrochemical modulation of electronic states in strongly correlated transition-metal oxides Reviewed

    Akira Ohtomo, Takuto Soma

    Vol. 91 ( No. 6 )   340 - 345   2022.6

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    Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.11470/oubutsu.91.6_340

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  • Epitaxial growth of MoO3 polymorphs and impacts of Li-ion electrochemical reactions on their structural and electronic properties Reviewed International journal

    Shuxin Zhang, Tatsuya Yajima, Takuto Soma, Akira Ohtomo

    Applied Physics Express   Volume 15 ( Number 5 )   055505   2022.5

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:{IOP} Publishing  

    DOI: 10.35848/1882-0786/ac6aae

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  • Two-dimensional superconductivity in single-band correlated <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mn>2</mml:mn><mml:mi>H</mml:mi></mml:mrow></mml:math> -type <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Nb</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math> layers International journal

    Takuto Soma, Kohei Yoshimatsu, Koji Horiba, Hiroshi Kumigashira, Akira Ohtomo

    Physical Review B   105 ( 10 )   2022.3

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:American Physical Society (APS)  

    DOI: 10.1103/physrevb.105.104504

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    Other Link: http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.105.104504/fulltext

  • Enhancement of transparency in epitaxially-grown p-type SnO films by surface-passivation treatment in a Na2S aqueous solution Reviewed International journal

    Suguri Uchida, Takuto Soma, Miho Kitamura, HIroshi Kumigashira, Akira OHTOMO

    Japanese Journal of Applied Physics   61   050903   2022.2

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP Publishing  

    <title>Abstract</title>
    We report on the epitaxial growth of (001)-oriented SnO films on yttria-stabilized zirconia (100) substrates by pulsed-laser deposition and the impact of surface-passivation treatment on the optical transparency. The films immersed in a Na2S aqueous solution exhibited average visible transmittance higher than that of the as-grown ones by ~18% despite negligibly small variations in crystalline structure, p-type conductivity, and composition. Based on these results, the enhanced visible transmittance can be attributed to the suppression of midgap states near the film surface. The extended treatment resulted in conversion to a SnS phase, demonstrating a facile anion-exchange reaction.

    DOI: 10.35848/1347-4065/ac56fa

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    Other Link: https://iopscience.iop.org/article/10.35848/1347-4065/ac56fa/pdf

  • Heavy-fermion metallic state and Mott transition induced by Li-ion intercalation in LiV2O4 epitaxial films Reviewed International journal

    Tatsuya Yajima, Takuto Soma, Kohei Yoshimatsu, Nobuyuki Kurita, Masari Watanabe, Akira Ohtomo

    Physical Review B   104 ( 24 )   245104   2021.12

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:American Physical Society (APS)  

    DOI: 10.1103/physrevb.104.245104

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    Other Link: http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.104.245104/fulltext

  • Optical properties of LiNbO2 thin films International journal

    T. Kurachi, T. Yamaguchi, E. Kobayashi, T. Soma, A. Ohtomo, T. Makino

    Physica B: Condensed Matter   621   413259 - 413259   2021.11

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Elsevier BV  

    DOI: 10.1016/j.physb.2021.413259

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  • Epitaxial Stabilization of Complete Solid-solution β-(Al<inf>x</inf>Ga<inf>1- x</inf>)<inf>2</inf>O<inf>3</inf>(100) Films by Pulsed-laser Deposition International journal

    Ryo Wakabayashi, Kohei Yoshimatsu, Mai Hattori, Jung Soo Lee, Osami Sakata, Akira Ohtomo

    Crystal Growth and Design   21 ( 5 )   2844 - 2849   2021.5

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acs.cgd.1c00030

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  • 物質理工学院応用化学系大友研究室2020年度研究報告 層状岩塩型LiNiO2のエピタキシャル成長と電気伝導性

    矢島 達也, 相馬 拓人, 大友 明

    東京工業大学極低温研究支援センターだより   2021.3

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  • Superconducting Dome Underlying Bipolaronic Insulating State in Charge-doped Ti4O7 Epitaxial Films Reviewed International journal

    Takuto Soma, Tomohiro Kobayashi, Kohei Yoshimatsu, Akira Ohtomo

    Journal of the Physical Society of Japan   Vol. 90 ( No. 2 )   023705 - 023705   2021.1

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Physical Society of Japan  

    DOI: 10.7566/JPSJ.90.023705

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  • Epitaxial Thin Film Growth of Europium Dihydride Reviewed International journal

    Yuya Komatsu, Ryota Shimizu, Markus Wilde, Shigeru Kobayashi, Yuki Sasahara, Kazunori Nishio, Kei Shigematsu, Akira Ohtomo, Katsuyuki Fukutani, Taro Hitosugi

    Crystal Growth and Design   20 ( 9 )   5903 - 5907   2020.9

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:American Chemical Society  

    DOI: 10.1021/acs.cgd.0c00602

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  • p-type transparent superconductivity in a layered oxide Reviewed International journal

    Takuto Soma, Kohei Yoshimatsu, Akira Ohtomo

    Science Advances   6 ( 29 )   eabb8570 - eabb8570   2020.7

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:American Association for the Advancement of Science (AAAS)  

    Development of p-type transparent conducting materials has been a challenging issue. The known p-type transparent conductors unsatisfy both of high transparency and high conductivity nor exhibit superconductivity. Here, we report on epitaxial synthesis, excellent p-type transparent conductivity, and two-dimensional superconductivity of Li1−<italic>x</italic>NbO2. The LiNbO2 epitaxial films with NbO2 sheets parallel to (111) plane of cubic MgAl2O4 substrates were stabilized by heating amorphous films. The hole doping associated with Li+ ion deintercalation triggered superconductivity below 4.2 kelvin. Optical measurements revealed that the averaged transmittance to the visible light of ~100-nanometer-thick Li1−<italic>x</italic>NbO2 was ~77%, despite the large number of hole carriers exceeding 1022 per cubic centimeter. These results indicate that Li1−<italic>x</italic>NbO2 is a previously unknown p-type transparent superconductor, in which strongly correlated electrons at the largely isolated Nb 4d<italic>z</italic>2 band play an important role for the high transparency.

    DOI: 10.1126/sciadv.abb8570

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  • Optical and structural investigations on titanium oxynitride films for visible-UV photocatalytic applications International journal

    Jun Mizushiro, Kohei Yoshimatsu, Naoki Ohashi, Masahiko Tanaka, Osami Sakata, Akira Ohtomo

    JOURNAL OF APPLIED PHYSICS   127 ( 13 )   6   2020.4

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    DOI: 10.1063/1.5143609

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  • 物質理工学院応用化学系大友研究室2019年度研究報告 Liイオン挿入反応による重い電子系スピネル型構造LiV2O4エピタキシャル薄膜の電気伝導性変調

    矢島 達也, 相馬 拓人, 大友 明

    東京工業大学極低温研究支援センターだより   2020.3

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  • Exchange bias and spin glass states driven by antisite disorder in the double perovskite compound LaSrCoFeO 6 International journal

    R. C. Sahoo, Yu Takeuchi, Akira Ohtomo, Z. Hossain

    Physical Review B   Vol. 100 ( Issue 21 )   9   2019.12

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  • Magnetic and electronic properties of B -site-ordered double-perovskite oxide La2CrMnO6 thin films Reviewed International journal

    K. Yoshimatsu, J. Ishimaru, K. Watarai, K. Yamamoto, Y. Hirata, H. Wadati, Y. Takeda, K. Horiba, H. Kumigashira, O. Sakata, A. Ohtomo

    Physical Review B   99 ( 23 )   235129   2019.6

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:American Physical Society (APS)  

    DOI: 10.1103/physrevb.99.235129

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    Other Link: http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.99.235129/fulltext

  • βパイロクロア型CsW2O6エピタキシャル薄膜における金属絶縁体転移をまたいだ電子物性 Reviewed International journal

    Takuto Soma, Kohei Yoshimatsu, Koji Horiba, Hiroshi Kumigashira, Akira Ohtomo

    Physical Review Materials   Vol. 2 ( 11 )   8   2018.11

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    DOI: 10.1103/PhysRevMaterials.2.115003

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  • Large anisotropy in conductivity of Ti2O3 films Reviewed International journal

    K. Yoshimatsu, H. Kurokawa, K. Horiba, H. Kumigashira, A. Ohtomo

    APL Materials   6   101101   2018.10

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    DOI: 10.1063/1.5050823

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  • Band alignment at β-(AlxGa1−x)2O3/β-Ga2O3 (100) interface fabricated by pulsed-laser deposition Reviewed International journal

    Ryo Wakabayashi, Mai Hattori, Kohei Yoshimatsu, Koji Horiba, Hiroshi Kumigashira, Akira Ohtomo

    Applied Physics Letters   112 ( 23 )   2018.6

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    DOI: 10.1063/1.5027005

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  • Superconductivity in Ti4O7 and gamma-Ti3O5 films Reviewed International journal

    K. Yoshimatsu, O. Sakata, A. Ohtomo

    SCIENTIFIC REPORTS   7   12544   2017.10

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    DOI: 10.1038/s41598-017-12815-4

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  • Epitaxial structure and electronic property of beta-Ga2O3 films grown on MgO (100) substrates by pulsed-laser deposition International journal

    Ryo Wakabayashi, Kohei Yoshimatsu, Mai Hattori, Akira Ohtomo

    APPLIED PHYSICS LETTERS   111 ( 16 )   162101   2017.10

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    DOI: 10.1063/1.4990779

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  • Highly oriented epitaxial CaFe2O4 thin films on TiO2 substrates grown by pulsed-laser deposition Reviewed

    Nana Nishiyama, Hisanori Mashiko, K. Yoshimatsu, Koji Horiba, Hiroshi Kumigashira, A. Ohtomo

    Thin Solid Films   Vol. 638   406 - 409   2017.9

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    DOI: 10.1016/j.tsf.2017.08.003

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  • Hetero-epitaxial growth control of single-crystalline anatase TiO2 nanosheets predominantly exposing the {001} facet on oriented crystalline substrates Reviewed International journal

    M. M. Maitani, K. Tanaka, H. Satou, T. Oshima, A. Ohtomo, Y. Wada

    CRYSTENGCOMM   19 ( 32 )   4734 - 4741   2017.8

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    DOI: 10.1039/c7ce00754j

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  • Effects of phase fraction on superconductivity of low-valence eutectic titanate films International journal

    Hikaru Kurokawa, Kohei Yoshimatsu, Osami Sakata, Akira Ohtomo

    JOURNAL OF APPLIED PHYSICS   122 ( 5 )   2017.8

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    DOI: 10.1063/1.4997443

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  • Electronic Structures and Photoanodic Properties of Ilmenite-type MTiO3 Epitaxial Films (M = Mn, Fe, Co, Ni) Reviewed International journal

    K. Yoshimatsu, H. Mashiko, N. Umezawa, K. Horiba, H. Kurnigashira, A. Ohtomo

    JOURNAL OF PHYSICAL CHEMISTRY C   121 ( 34 )   18717 - 18724   2017.8

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    DOI: 10.1021/acs.jpcc.7b06076

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  • Microwave Effects on Co-Pi Cocatalysts Deposited on alpha-Fe2O3 for Application to Photocatalytic Oxygen Evolution Reviewed International journal

    Masato M. Maitani, Takuya Yamada, Hisanori Mashiko, Kohei Yoshimatsu, Takayoshi Shim, Akira Ohtomo, Yuji Wada

    ACS APPLIED MATERIALS & INTERFACES   9 ( 12 )   10349 - 10354   2017.3

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    DOI: 10.1021/acsami.6b16319

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  • Formation of indium-tin oxide ohmic contacts for beta-Ga2O3 Reviewed International journal

    Oshima Takayoshi, Wakabayashi Ryo, Hattori Mai, Hashiguchi Akihiro, Kawano Naoto, Sasaki Kohei, Masui Takekazu, Kuramata Akito, Yamakoshi Shigenobu, Yoshimatsu Kohei, Ohtomo Akira, Oishi Toshiyuki, Kasu Makoto

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 12 )   1202B7   2016.12

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    DOI: 10.7567/JJAP.55.1202B7

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  • Epitaxial growth and electric properties of gamma-Al2O3(110) films on beta-Ga2O3(010) substrates Reviewed International journal

    Hattori Mai, Oshima Takayoshi, Wakabayashi Ryo, Yoshimatsu Kohei, Sasaki Kohei, Masui Takekazu, Kuramata Akito, Yamakoshi Shigenobu, Horiba Koji, Kumigashira Hiroshi, Ohtomo Akira

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 12 )   1202B6   2016.12

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    DOI: 10.7567/JJAP.55.1202B6

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  • Epitaxial synthesis and physical properties of double-perovskite oxide Sr2CoRuO6 thin films Reviewed International journal

    Keisuke Watarai, K. Yoshimatsu, Koji Horiba, Hiroshi Kumigashira, Osami Sakata, A. Ohtomo

    Journal of Physics: Condensed Matter   Vol. 28 ( No. 48 )   2016.9

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    DOI: 10.1088/0953-8984/28/43/436005

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  • Impact of built-in potential across LaFeO3/SrTiO3 heterojunctions on photocatalytic activity Reviewed International journal

    Kentarou Nakamura, Hisanori Mashiko, Kohei Yoshimatsu, Akira Ohtomo

    APPLIED PHYSICS LETTERS   108 ( 21 )   211605   2016.5

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    DOI: 10.1063/1.4952736

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  • Strain-induced metal-insulator transition in t(2g) electron system of perovskite titanate Sm0.5Ca0.5TiO3 films Reviewed International journal

    K. Yoshimatsu, H. Okabe, T. Oshima, S. Ueda, A. Ohtomo

    PHYSICAL REVIEW B   93 ( 19 )   195159   2016.5

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    DOI: 10.1103/PhysRevB.93.195159

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  • Fabrication and Characterization of Semiconductor Photoelectrodes with Orientation-Controlled α-Fe2O3 Thin Films Reviewed International journal

    H. Mashiko, K. Yoshimatsu, T. Oshima, A. Ohtomo

    The Journal of Physical Chemistry C   Vol. 120 ( No. 5 )   2747–2752   2016.1

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    Epitaxial α-Fe2O3 thin films on conducting Ta-doped SnO2 bottom layers are prepared by pulsed-laser deposition in order to elucidate variation of the photoelectrochemical (PEC) properties for the water oxidation reaction on the α-Fe2O3 photoanodes with different orientation and thickness. Cyclic voltammetry under illumination shows that current density (photocurrent onset potential) of the m-axis oriented samples is considerably larger (lower) than that of the c-axis oriented ones. Using electrochemical impedance spectroscopy under illumination, we ascribe these behaviors to difference in surface states between c- and m-planes besides anisotropic conductivity along the individual axes. Our study demonstrates the power of utilizing well-defined epitaxial thin films to investigate the anisotropic PEC properties of visible-light-driven photoelectrodes.

    DOI: 10.1021/acs.jpcc.5b10838

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  • Insulator to metal transition of WO3 epitaxial films induced by electrochemical Li-ion intercalaion Reviewed International journal

    K. Yoshimatsu, Takuto Soma, A. Ohtomo

    Apllied Physics Express   9 ( 7 )   75802 - 75802   2016

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Institute of Physics  

    We investigated the systematic evolution of the structural and electronic properties of Li<inf>x</inf>WO<inf>3</inf>films induced by Li-ion electrochemical reactions. Chronoamperometric Li-ion intercalation could control the Li content up to x ∼ 0.5. The resistivity decreased abruptly with increasing x, and the films underwent an insulator-to-metal transition (IMT) within a range of 0.2 < x < 0.24, which was consistent with the IMT of cubic Na<inf>x</inf>WO<inf>3</inf>. X-ray diffraction analyses revealed the coexistence of tetragonal and cubic phases across the IMT, suggesting that the alkaline ion content was the primary factor in the metallic conductivity of the ReO<inf>3</inf>-type WO<inf>3</inf>system.

    DOI: 10.7567/APEX.9.075802

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  • Epitaxial growth of hexagonal tungsten bronze CsxWO3 films in superconducting phase region exceeding bulk limit Reviewed International journal

    Takuto Soma, K. Yoshimatsu, A. Ohtomo

    Apllied Physics Express   9 ( 7 )   75801 - 75801   2016

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    We report epitaxial synthesis of superconducting Cs<inf>x</inf>WO<inf>3</inf>(x = 0.11, 0.20, and 0.31) films on Y-stabilized ZrO<inf>2</inf>(111) substrates. The hexagonal crystal structure was verified not only for the composition within the stable region of the bulk (x = 0.20 and 0.31), but also for the out-of-range composition (x = 0.11). The onset of the superconducting transition was recorded at 5.8 K for x = 0.11. We found a strong correlation between the superconducting transition temperature (T<inf>C</inf>) and the c-axis length, irrespective of the Cs content. These results indicated that the hidden superconducting phase region of hexagonal tungsten bronze is accessible using epitaxial synthesis of lightly doped films.

    DOI: 10.7567/APEX.9.075801

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  • Reversible superconductor-insulator transition in LiTi2O4 induced by Li-ion electrochemical reaction Reviewed International journal

    K. Yoshimatsu, M. Niwa, H. Mashiko, T. Oshima, A. Ohtomo

    SCIENTIFIC REPORTS   5 ( 16325 )   2015.11

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    DOI: 10.1038/srep16325

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  • Oxygen-radical-assisted pulsed-laser deposition of β-Ga2O3 and β-(AlxGa1−x)2O3 films Reviewed

    R. Wakabayashi, T. Oshima, M. Hattori, T. Masui, A. Kuramata, S. Yamakoshi, K. Yoshimatsu, A. Ohtomo

    Journal of Crystal Growth   Vol. 424   77 - 79   2015.5

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    DOI: 10.1016/j.jcrysgro.2015.05.005

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  • Conducting Si-doped γ-Ga2O3 epitaxial films grown by pulsed-laser deposition Reviewed International journal

    Takayoshi Oshima, Keitarou Matsuyama, Kohei Yoshimatsu, Akira Ohtomo

    Journal of Crystal Growth   Volume 421   23 - 26   2015.4

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    DOI: 10.1016/j.jcrysgro.2015.04.011

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  • Pulsed-laser deposition of superconducting LiTi2O4 ultrathin films Reviewed International journal

    T. Oshima, M. Niwa, K. Yokoyama, A. Ohtomo

    Journal of Crystal Growth   Volume 419   153 - 157   2015.3

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    DOI: 10.1016/j.jcrysgro.2015.03.029

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  • Direct growth of metallic TiH2 thin films by pulsed laser deposition Reviewed International journal

    Yoshimatsu Kohei, Suzuki Takayuki, Tsuchimine Nobuo, Horiba Koji, Kumigashira Hiroshi, Oshima Takayoshi, Ohtomo Akira

    APPLIED PHYSICS EXPRESS   8 ( 3 )   35801 - 35801   2015.3

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    DOI: 10.7567/APEX.8.035801

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  • Synthesis and magnetic properties of double-perovskite oxide La2MnFeO6 thin films Reviewed International journal

    K. Yoshimatsu, K. Nogami, K. Watarai, K. Horiba, H. Kumigashira, O. Sakata, T. Oshima, A. Ohtomo

    PHYSICAL REVIEW B   91 ( 5 )   054421   2015.2

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    DOI: 10.1103/PhysRevB.91.054421

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  • Epitaxial growth of wide-band-gap ZnGa2O4 films by mist chemical vapor deposition Reviewed International journal

    T. Oshima, M. Niwa, A. Mukai, T. Nagami, T. Suyama, A. Ohtomo

    Journal of Crystal Growth   Volume 386   190 - 193   2014.1

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    DOI: 10.1016/j.jcrysgro.2013.10.012

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  • Surface and interface engineering of ZnO based heterostructures fabricated by pulsed-laser deposition International journal

    A. Tsukazaki, A. Ohtomo, M. Kawasaki

    Journal of Physics D: Applied Physics   Volume 47 ( Number 3 )   034003   2013.12

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    ZnO and related alloys are an important class of materials to realize transparent electronics because of their characteristic wide band-gap and high mobility, and also because of their
    practical advantages, such as: vailable n-type materials and bulk single crystals, low-cost production, and absence of toxicity. Our studies have been conducted for more than a decade
    and they have enabled surface and interface engineering on an atomic scale, presenting a promising technology for developing electrical devices of various kinds. The quality of the epitaxial films was improved drastically when grown on high-temperature annealed buffer layers prepared on lattice-matched ScAlMgO4 substrates using pulsed-laser deposition. We carefully investigated the growth temperature dependence of surface morphology and
    electrical properties. Electron mobility was recorded as 440 cm2 V−1 s−1 at room temperature
    and 5500 cm2 V−1 s−1 at 1 K, leading to observation of the integer quantum Hall-effect (QHE) in abrupt ZnO/MgxZn1−xO interfaces. Two-dimensional electron gas (2DEG) was formed spontaneously in the interface because of the polarization mismatch between the layers. The observation of QHE enables us to access the direct determination of the interfacial electronic structure. In addition, the field-effect control of 2DEG has been demonstrated using lattice-matched interfaces as high-mobility channels.

    DOI: 10.1088/0022-3727/47/3/034003

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  • Improved visible light driven photoelectrochemical properties of 3C-SiC semiconductor with Pt nanoparticles for hydrogen generation Reviewed International journal

    Jun Tae Song, Hisanori Mashiko, Masayuki Kamiya, Yoshifumi Nakamine, Akira Ohtomo, Takayuki Iwasaki, Mutsuko Hatano

    APPLIED PHYSICS LETTERS   103 ( 21 )   213901 (5 pages)   2013.11

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    DOI: 10.1063/1.4832333

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  • beta-Ga2O3 Single Crystal as a Photoelectrode for Water Splitting Reviewed International journal

    Oshima Takayoshi, Kaminaga Kenichi, Mashiko Hisanori, Mukai Akira, Sasaki Kohei, Masui Takekazu, Kuramata Akito, Yamakoshi Shigenobu, Ohtomo Akira

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 11 )   111102 - 1-4   2013.11

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    DOI: 10.7567/JJAP.52.111102

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  • Epitaxial Synthesis and Electronic Properties of Double-Perovskite Sr2TiRuO6 Films Reviewed International journal

    Nogami Kengo, Yoshimatsu Kohei, Mashiko Hisanori, Sakai Enju, Kumigashira Hiroshi, Sakata Osami, Oshima Takayoshi, Ohtomo Akira

    APPLIED PHYSICS EXPRESS   6 ( 10 )   105502 - 1-4   2013.10

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    DOI: 10.7567/APEX.6.105502

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  • Formation of Semi-Insulating Layers on Semiconducting beta-Ga2O3 Single Crystals by Thermal Oxidation Reviewed International journal

    Oshima Takayoshi, Kaminaga Kenichi, Mukai Akira, Sasaki Kohei, Masui Takekazu, Kuramata Akito, Yamakoshi Shigenobu, Fujita Shizuo, Ohtomo Akira

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 5 )   51101 - 051101-5   2013.5

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    DOI: 10.7567/JJAP.52.051101

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  • Spontaneous atomic ordering and magnetism in epitaxially stabilized double perovskites Reviewed International journal

    A. Ohtomo, S. Chakraverty, H. Mashiko, T. Oshima, M. Kawasaki

    Journal of Materials Research   Volume 28 ( 5 )   689 - 695   2013.1

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    DOI: 10.1557/jmr.2012.438

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  • Electronic conduction at the interfaces of complex oxide heterojunctions

    OHTOMO Akira

    81 ( 12 )   1002 - 1008   2012.12

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  • Spontaneous atomic ordering and magnetism in epitaxially stabilized double-perovskites Reviewed International journal

    Akira Ohtomo, Akira Ohtomo, Suvankar Chakraverty, Hisanori Mashiko, Takayoshi Oshima, Masashi Kawasaki, Masashi Kawasaki, Masashi Kawasaki

    Materials Research Society Symposium Proceedings   1454   3 - 13   2012.12

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    DOI: 10.1557/opl.2012.923

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  • Epitaxial growth of gamma-Ga2O3 films by mist chemical vapor deposition Reviewed International journal

    Oshima Takayoshi, Nakazono Taishi, Mukai Akira, Ohtomo Akira

    JOURNAL OF CRYSTAL GROWTH   359   60 - 63   2012.11

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    DOI: 10.1016/j.jcrysgro.2012.08.025

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  • Epitaxial Structures of Band-Gap-Engineered alpha-(CrxFe1-x)(2)O-3 (0 <= x <= 1) Films Grown on C-Plane Sapphire Reviewed International journal

    Mashiko Hisanori, Oshima Takayoshi, Ohtomo Akira

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 11 )   11PG11 - 11PG11-5   2012.11

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    DOI: 10.1143/JJAP.51.11PG11

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  • Band-gap narrowing in α-(CrxFe1-x)2O3 solid-solution films Reviewed International journal

    H. Mashiko, T. Oshima, A. Ohtomo

    Applied Physics Letters   Vol. 99 ( 24 )   241904-1-3   2011.12

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    DOI: 10.1063/1.3669704

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  • Magnetic properties of Sr2FeTaO6 double perovskite epitaxially grown by pulsed-laser deposition International journal

    S. Chakraverty, M. Saito, S. Tsukimoto, Y. Ikuhara, A. Ohtomo, M. Kawasaki

    APPLIED PHYSICS LETTERS   99 ( 22 )   223101 - 223103   2011.11

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    DOI: 10.1063/1.3663214

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  • Magnetic and electronic properties of ordered double-perovskite La 2VMnO6 thin films Reviewed

    S. Chakraverty, K. Yoshimatsu, Y. Kozuka, H. Kumigashira, M. Oshima, T. Makino, A. Ohtomo, M. Kawasaki

    Physical Review B - Condensed Matter and Materials Physics   84 ( 13 )   2011.10

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    DOI: 10.1103/PhysRevB.84.132411

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  • Magnetic and electronic properties of ordered double-perovskite La2VMnO6 thin films Reviewed International journal

    K. Yoshimatsu, S. Chakraverty, Y. Kozuka, H. Kumigashira, M. Oshima, T. Makino, A. Ohtomo, M. Kawasaki

    Physical Review B   Vol. 84 ( 13 )   132411-1-4   2011.10

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    DOI: 10.1103/PhysRevB.84.132411

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  • Ferrimagnetism and spontaneous ordering of transition metals in double perovskite La2CrFeO6 films Reviewed International journal

    S. Chakraverty, A. Ohtomo, D. Okuyama, M. Saito, M. Okude, R. Kumai, T. Arima, Y. Tokura, S. Tsukimoto, Y. Ikuhara, M. Kawasaki

    Physical Review B   Vol. 84 ( 6 )   064436-1-5   2011.8

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    DOI: 10.1103/PhysRevB.84.064436

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  • Improvement of Electron Mobility above 100,000 cm(2) V-1 s(-1) in MgxZn1-xO/ZnO Heterostructures Reviewed International journal

    Shunsuke Akasaka, Atsushi Tsukazaki, Ken Nakahara, Akira Ohtomo, Masashi Kawasaki

    JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 8 )   080215-1-3   2011.8

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    DOI: 10.1143/JJAP.50.080215

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  • Preparation of an Epitaxy-Ready Surface of a ZnO(0001) Substrate Reviewed International journal

    Shunsuke Akasaka, Ken Nakahara, Hiroyuki Yuji, Atsushi Tsukazaki, Akira Ohtomo, Masashi Kawasaki

    APPLIED PHYSICS EXPRESS   4 ( 3 )   035701-1-3   2011.3

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    DOI: 10.1143/APEX.4.035701

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  • Electric-field control of two-dimensional electrons in polymer-gated oxide semiconductor heterostructures Reviewed International journal

    M. Nakano, A. Tsukazaki, A. Ohtomo, K. Ueno, S. Akasaka, H. Yuji, K. Nakahara, T. Fukumura, M. Kawasaki

    Advanced Materials   22 ( No. 8 )   876 - 879   2010.12

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    A defect-free and electronically abrupt polymer/oxide interface can be achieved by spin-coating of PEDOT:PSS on ZnO-based heterostructures. The interface yielding Schottky contact leads to the successful modulation of quantum 2D transport in MgZnO/ZnO interfaces via the electric-field effect, which indicates that the polymer/oxide interface enables a high-mobility field-effect transistor.

    DOI: 10.1002/adma.200902162

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  • Controlled B-site ordering in Sr2CrReO6 double perovskite films by using pulsed laser interval deposition International journal

    S. Chakraverty, A. Ohtomo, M. Kawasaki

    APPLIED PHYSICS LETTERS   97 ( 24 )   243107 - 243109   2010.12

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    DOI: 10.1063/1.3525578

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  • Dimensionality-driven insulator–metal transition in A-site excess non-stoichiometric perovskites Reviewed International journal

    Z. Wang, M. Okude, M. Saito, S. Tsukimoto, A. Ohtomo, M. Tsukada, M. Kawasaki, Y. Ikuhara

    Nature Communications   Vol. 1   106-1-7   2010.11

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    DOI: 10.1038/ncomms1111

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  • Observation of the fractional quantum Hall effect in an oxide Reviewed International journal

    A. Tsukazaki, S. Akasaka, K. Nakahara, Y. Ohno, H. Ohno, D. Maryenko, A. Ohtomo, M. Kawasaki

    Nature Materials   Vol. 9 ( No. 11 )   889 - 893   2010.10

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    The quantum Hall effect arises from the cyclotron motion of charge carriers in two-dimensional systems. However, the ground states related to the integer and fractional quantum Hall effect, respectively, are of entirely different origin. The former can be explained within a single-particle picture; the latter arises from electron correlation effects governed by Coulomb interaction. The prerequisite for the observation of these effects is extremely smooth interfaces of the thin film layers to which the charge carriers are confined. So far, experimental observations of such quantum transport phenomena have been limited to a few material systems based on silicon, III–V compounds and graphene. In ionic materials, the correlation between electrons is expected to be more pronounced than in the conventional heterostructures, owing to a large effective mass of charge carriers. Here we report the observation of the fractional quantum Hall effect in MgZnO/ZnO heterostructures grown by molecular-beam epitaxy, in which the electron mobility exceeds 180,000 cm<2> V<−1> s<−1>. Fractional states such as ν=4/3, 5/3 and 8/3 clearly emerge, and the appearance of the ν=2/5 state is indicated. The present study represents a technological advance in oxide electronics that provides opportunities to explore strongly correlated phenomena in quantum transport of dilute carriers.

    DOI: 10.1038/nmat2874

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  • Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultraviolet light-emitting diodes on ZnO substrates Reviewed International journal

    K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A.Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A.Tsukazaki, A. Ohtomo, M. Kawasaki

    Applied Physics Letters   97 ( 1 )   013501(1) - (3)   2010.7

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  • 酸化亜鉛系分極不整合界面の2次元伝導と導電性高分子を用いた伝導性制御

    塚崎敦, 中野匡規, 大友明, 上野和紀, 赤坂俊輔, 湯地洋行, 中原健, 福村知昭, 川崎雅司

    まてりあ   49 ( 7月 )   312 - 313   2010.7

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    DOI: 10.2320/materia.49.312

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  • Optimization of the Growth Conditions for Molecular Beam Epitaxy of MgxZn1-xO (0 ≤ x ≤ 0.12) Films on Zn-polar ZnO Substrates Reviewed International journal

    H. Yuji, K. Nakahara, K. Tamura, S. Akasaka, Y. Nishimoto, D. Takamizu, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, M. Kawasaki

    Japanese Journal of Applied Physics   49 ( 7 )   071104 1 - 5   2010.7

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  • Hydrogenation-Induced Surface Polarity Recognition and Proton Memory Behavior at Protic-Ionic-Liquid/Oxide Electric-Double-Layer Interfaces Reviewed International journal

    Hongtao Yuan, Hidekazu Shimotani, Atsushi Tsukazaki, Akira Ohtomo, Masashi Kawasaki, Yoshihiro Iwasa

    Journal of the American Chemical Society   132 ( 19 )   6672 - 6678   2010.5

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    The electric-double-layer (EDL) formed at liquid/solid interfaces provides a broad and interdisciplinary attraction in terms of electrochemistry, photochemistry, catalysts, energy storage, and electronics. Especially in recent years, much effort has been devoted to the fundamental understanding and practical applications of transistor configurations with EDLs because of their ability for high-density charge accumulation. However, to exploit additional new functionalities of such an emerging interface is not only of great importance but also a huge challenge. Here, we demonstrate that, by introducing protic ionic liquid (PIL) as the gate dielectric for ZnO EDL transistors (EDLTs), small and chemically active ions, such as protons and hydroxyls, can serve as an adsorption medium to extend the interfacial functionalities of EDLTs. By selectively driving the H+ or OH- groups onto ZnO channel surfaces with an electric field, the charged adsorbates interact with surface atoms in different adsorption mechanisms, showing remarkable variations in electron transport and providing a possibility for the recognition of surface polarity. Most significantly, the large hysteresis in the transfer characteristics of PIL-EDLTs makes the device available and promising for nonvolatile proton memory devices via surface hydrogenation and dehydrogenation processes. Such a finding provides us with new opportunities to understand liquid/solid heterogeneous interface phenomena and to extend the practical functions of EDLs through controllable interfacial interaction.

    DOI: 10.1021/ja909110s

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  • Electronic-Field Control of Two-Dimensional Electrons in Polymer-Gated-Oxide Semiconductor Heterostructures (vol 22, pg 876, 2010) Reviewed

    Masaki Nakano, Atsushi Tsukazaki, Akira Ohtomo, Kazunori Ueno, Shunsuke Akasaka, Hiroyuki Yuji, Ken Nakahara, Tomoteru Fukumura, Masashi Kawasaki

    ADVANCED MATERIALS   22 ( 14 )   1553 - 1553   2010.4

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  • Spatial distribution of two-dimensional electron gas in a ZnO/Mg0.2Zn0.8O geterostructure probed with a conducting polymer Schottky contact Reviewed International journal

    M. Nakano, A. Tsukazaki, K. Ueno, R. Y. Gunji, A. Ohtomo, T. Fukumura, M. Kawasaki

    Applied Physics Letters   96 ( No. 5 )   052116-1 - 052116-3   2010.2

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    A ZnO/Mg0.2Zn0.8O heterostructure was characterized at T=2 K through capacitance measurements with using a conducting polymer, poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS), as a Schottky contact. The Nyquist diagram, which is the trajectory curve of the complex impedance vector, appeared to be an excellent semicircular shape, implying that the PEDOT:PSS/ZnO/Mg0.2Zn0.8O junction can be described with an equivalent single RC parallel circuit. Capacitance-voltage characteristics elucidate the existence of a two-dimensional electron gas, where 1019 cm-3 electrons are confined within 5 nm at the ZnO/Mg0.2Zn0.8O heterointerface.

    DOI: 10.1063/1.3309699

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  • MgxZn1-xO Films with a Low Residual Donor Concentration (&lt; 10(15) cm(-3)) Grown by Molecular Beam Epitaxy Reviewed International journal

    Shunsuke Akasaka, Ken Nakahara, Atsushi Tsukazaki, Akira Ohtomo, Masashi Kawasaki

    APPLIED PHYSICS EXPRESS   3 ( 7 )   071101-1-3   2010

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    DOI: 10.1143/APEX.3.071101

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  • Epitaxial structure of (001)- and (111)-oriented perovskite ferrate films grown by pulsed-laser deposition International journal

    S. Chakraverty, A. Ohtomo, M. Okude, K. Ueno, M. Kawasaki

    Crystal Growth & Design   10 ( 4 )   1725 - 1729   2010

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    We report epitaxial growth and structures of SrFeO2.5 (SFO) films on SrTiO3 (STO) (001) and (111) substrates by pulsed-laser deposition. Reflection high-energy electron diffraction intensity oscillations were observed during the initial growth on both substrates, reflecting a layer-by-layer growth mode of the formula unit cell. It was found that the films were stabilized with a monoclinic structure that was derived from the original orthorhombic structure of bulk Brownmillerite. Using an X-ray reciprocal space mapping technique, in-plane domain structures and the orientation relationship were investigated. In addition, the impact of laser spot area on the epitaxial structures was studied. For the films grown on the (001) STO, the orientation relationship was robust against the change of the laser spot area: SFO(001)//STO(001) and SFO(100)//STO(100) for the out-of-plane and the in-plane, respectively, with the [001] axis tilted toward the 4-fold a- and b-axes by similar to 1.4 degrees, whereas nearly (111)-oriented films were obtained on the (111) STO, exhibiting a complicated manner of tilting that depended on laser spot area. The observed variation in tilting configurations can be understood in terms of possible atomic arrangements at the SFO/STO interface. These results present a guide to control the heteroepitaxial growth and structure of (111)-oriented noncubic perovskites.

    DOI: 10.1021/cg901355c

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  • Excitonic characteristics in direct wide band-gap CuScO2 epitaxial thin films Reviewed International journal

    H. Hiraga, T. Makino, T. Fukumura, A. Ohtomo, M. Kawasaki

    Appl. Phys. Lett.   95 ( 211908 )   1 - 3   2009.11

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    Thin films of a delafossite compound CuScO2 were grown on spinel MgAl2O4 (111) substrates, yielding in highly crystalline and (0001)-oriented epitaxial structures. Absorption spectra at 20 K revealed a sharp exciton resonance at 3.97 eV, which persisted up to 300 K. Its direct transition band gap at 20 K and exciton binding energies were determined to be about 4.35 and 380 meV, both of which are considerably larger than those of ZnO. In view of its capability of naturally layered structure and p-type doping, this compound will be interesting for exciton physics as well as implementation of heterostructured devices.

    DOI: 10.1063/1.3268476

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    Other Link: http://orcid.org/0000-0002-8957-3520

  • Magneto-optical study of n-type modulation-doped ZnO/MgxZn1-xO single quantum well structures Reviewed International journal

    T. Makino, Y. Furuta, Y. Segawa, A. Tsukazaki, A. Ohtomo, Y. Hirayama, R. Shen, S. Takeyama, Y. Takagi, M. Kawasaki

    Physical Review B   80 ( No. 15 )   155333-1 - 155333-5   2009.10

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    We report on the effect of electron injection on the magneto-optical properties of MgZnO/ZnO(5nm)/MgZnO single quantum wells (SQWs) by embedding a Ga delta-doped layer in one of the MgZnO barriers. Approaching the delta-doped layer to the SQW resulted in a photoluminescence (PL) blueshift due to the screening of internal polarization field by the injected electrons. Circular polarization in PL was enhanced by a magnetic field up to 50 T with a Faraday configuration. The observed Zeeman splitting and the degree of circular polarization in the magnetic field revealed that the PL originates from the negatively charged excitons X-.

    DOI: 10.1103/PhysRevB.80.155333

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  • Optical and magnetic properties of CuMnO2 epitaxial thin films with a delafossite-derivative structure International journal

    H. Hiraga, T. Fukumura, A. Ohtomo, T. Makino, A. Ohkubo, H. Kimura, M. Kawasaki

    APPLIED PHYSICS LETTERS   95 ( 3 )   032109-1-032109-3   2009.7

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    DOI: 10.1063/1.3186790

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  • High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids International journal

    Hongtao Yuan, Hidekazu Shimotani, Atsushi Tsukazaki, Akira Ohtomo, Masashi Kawasaki, Yoshihiro Iwasa

    ADVANCED FUNCTIONAL MATERIALS   19 ( 7 )   1046 - 1053   2009.4

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    DOI: 10.1002/adfm.200801633

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  • 酸化亜鉛系薄膜トランジスタ

    大友 明, 川崎 雅司

    月刊ディスプレイ   15 ( 4 )   26 - 31   2009.4

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  • Crystal Structure and Valence Distribution of [(LaMnO3)(m)(SrMnO3)(m)](n) Artificial Superlattices International journal

    Hironori Nakao, Jun Nishimura, Youichi Murakami, Akira Ohtomo, Tomoteru Fukumura, Masashi Kawasaki, Takashi Koida, Yusuke Wakabayashi, Hiroshi Sawa

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   78 ( 2 )   024602-1-024602-10   2009.2

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    DOI: 10.1143/JPSJ.78.024602

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  • MgxZn1-xO-Based Schottky Photodiode for Highly Color-Selective Ultraviolet Light Detection International journal

    Masaki Nakano, Takayuki Makino, Atsushi Tsukazaki, Kazunori Ueno, Akira Ohtomo, Tomoteru Fukumura, Hiroyuki Yuji, Yoshio Nishimoto, Shunsuke Akasaka, Daiju Takamizu, Ken Nakahara, Tetsuhiro Tanabe, Akira Kamisawa, Masashi Kawasaki

    APPLIED PHYSICS EXPRESS   1 ( 12 )   121201-1-121201-3   2008.12

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    DOI: 10.1143/APEX.1.121201

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  • Spin susceptibility and effective mass of two-dimensional electrons in MgxZn1-xO/ZnO heterostructures International journal

    A. Tsukazaki, A. Ohtomo, M. Kawasaki, S. Akasaka, H. Yuji, K. Tamura, K. Nakahara, T. Tanabe, A. Kamisawa, T. Gokmen, J. Shabani, M. Shayegan

    PHYSICAL REVIEW B   78 ( 23 )   233308-1-233308-4   2008.12

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    DOI: 10.1103/PhysRevB.78.233308

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  • Photoexcitation screening of the built-in electric field in ZnO single quantum wells International journal

    T. Makino, Y. Segawa, A. Tsukazaki, A. Ohtomo, M. Kawasaki

    APPLIED PHYSICS LETTERS   93 ( 12 )   121907-1-121907-3   2008.9

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    DOI: 10.1063/1.2981523

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  • Plasma-assisted molecular beam epitaxy of high optical quality MgZnO films on Zn-polar ZnO substrates International journal

    Yoshio Nishimoto, Ken Nakahara, Daiju Takamizu, Atsushi Sasaki, Kentaro Tamura, Shunsuke Akasaka, Hiroyuki Yuji, Tetsuo Fujii, Tetsuhiro Tanabe, Hidemi Takasu, Atsushi Tsukazaki, Akira Ohtomo, Takeyoshi Onuma, Shigefusa F. Chichibu, Masashi Kawasaki

    APPLIED PHYSICS EXPRESS   1 ( 9 )   091202-1-091202-3   2008.9

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    DOI: 10.1143/APEX.1.091202

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  • Transparent polymer Schottky contact for a high performance visible-blind ultraviolet photodiode based on ZnO International journal

    M. Nakano, T. Makino, A. Tsukazaki, K. Ueno, A. Ohtomo, T. Fukumura, H. Yuji, S. Akasaka, K. Tamura, K. Nakahara, T. Tanabe, A. Kamisawa, M. Kawasaki

    APPLIED PHYSICS LETTERS   93 ( 12 )   123309-1-123309-3   2008.9

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    DOI: 10.1063/1.2989125

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  • Epitaxial synthesis of Srn+1TinO3n+1 (n=2-5) Ruddlesden-Popper homologous series by pulsed-laser deposition International journal

    Masaki Okude, Akira Ohtomo, Takuji Kita, Masashi Kawasaki

    APPLIED PHYSICS EXPRESS   1 ( 8 )   081201-1-081201-3   2008.8

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    DOI: 10.1143/APEX.1.081201

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  • Effect of in situ annealed SnO(2) buffer layer on structural and electrical properties of (001) SnO(2)/TiO(2) heterostructures International journal

    Masaki Okude, Kazunori Ueno, Shun Itoh, Masae Kikuchi, Akira Ohtomo, Masashi Kawasaki

    JOURNAL OF PHYSICS D-APPLIED PHYSICS   41 ( 12 )   125309-1-125309-4   2008.6

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    DOI: 10.1088/0022-3727/41/12/125309

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  • Quantitative conductivity mapping of SrTiO3-LaAlO3-LaTiO3 ternary composition-spread thin film by scanning microwave microscope International journal

    Sohei Okazaki, Noriaki Okazaki, Yasushi Hirose, Jun Nishimura, Kazunori Ueno, Akira Ohtomo, Masashi Kawasaki, Hideomi Koinuma, Tetsuya Hasegawa

    APPLIED PHYSICS EXPRESS   1 ( 5 )   055003-1-055003-3   2008.5

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    DOI: 10.1143/APEX.1.055003

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  • High electron mobility exceeding 10(4) cm(2) V-1 s(-1) in MgxZn1-xO/ZnO single heterostructures grown by molecular beam epitaxy International journal

    Atsushi Tsukazaki, Hiroyuki Yuji, Shunsuke Akasaka, Kentaro Tamura, Ken Nakahara, Tetsuhiro Tanabe, Hidemi Takasu, Akira Ohtomo, Masashi Kawasaki

    APPLIED PHYSICS EXPRESS   1 ( 5 )   055004-1-055004-3   2008.5

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    DOI: 10.1143/APEX.1.055004

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  • High-throughput screening for combinatorial thin-film library of thermoelectric materials International journal

    Masaki Watanabe, Takuji Kita, Tornoteru Fukumura, Akira Ohtomo, Kazunori Ueno, Masashi Kawasaki

    JOURNAL OF COMBINATORIAL CHEMISTRY   10 ( 2 )   175 - 178   2008.3

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    DOI: 10.1021/cc700094a

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  • ペロブスカイト酸化物界面の原子層成長制御

    大友 明

    機能材料   28 ( 3 )   15 - 20   2008.2

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  • Surface and Interface Engineering and Observation of Quantum Transport in ZnO Based Heterojunctions

    OHTOMO Akira, TSUKAZAKI Atsushi, KAWASAKI Masashi

    Journal of the Surface Science Society of Japan   29 ( 1 )   10 - 17   2008

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    DOI: 10.1380/jsssj.29.10

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  • Atomic-layer growth control of perovskite oxide heterointerface

    CMC Publishing Co., Ltd.,Function & Materials   28 ( 3 )   15 - 20   2008

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  • Polymer Schottky contact on O-polar ZnO with silane coupling agent as surface protective layer

    R. Y. Gunji, M. Nakano, A. Tsukazaki, A. Ohtomo, T. Fukumura, M. Kawasaki

    Applied Physics Letters   93 ( 1 )   012104-1-012104-3   2008

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    DOI: 10.1063/1.2956419

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  • Electric-field-induced superconductivity in an insulator International journal

    K. Ueno, S. Nakamura, H. Shimotani, A. Ohtomo, N. Kimura, T. Nojima, H. Aoki, Y. Iwasa, M. Kawasaki

    Nat. Mater.   7 ( 11 )   855 - 858   2008

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    DOI: 10.1038/nmat2298

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  • MgxZn1-xO epitaxial films grown on ZnO substrates by molecular beam epitaxy International journal

    H. Yuji, K. Nakahara, K. Tamura, S. Akasaka, A. Sasaki, T. Tanabe, H. Takasu, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, M. Kawasaki

    ZINC OXIDE MATERIALS AND DEVICES III   6895   68950D   2008

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    DOI: 10.1117/12.774974

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  • Photoinduced insulator-to-metal transition in ZnO/Mg0.15Zn0.85O heterostructures

    Appl. Phys. Lett.   92   052105-1-052105-3   2008

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  • Low-temperature field-effect and magnetotransport properties in a ZnO based heterostructure with atomic-layer-deposited gate dielectric International journal

    A. Tsukazaki, A. Ohtomo, D. Chiba, Y. Ohno, H. Ohno, M. Kawasaki

    Applied Physics Letters   93 ( No. 24 )   241905-1-241905-3   2008

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    A top-gate field-effect device with atomic-layer-deposited Al2O3 dielectric was fabricated to investigate magnetotransport properties of two-dimensional electron gas (2DEG) at a semi-insulating ZnO-Mg0.12Zn0.88O double heterostructure grown by laser molecular-beam epitaxy. Hall mobility monotonically increased as the density of accumulated electrons increased. The highest mobility at 2 K was recorded to be 5000 cm2 V-1 s-1 at a 2DEG density of 1.2x1012 cm-2, which is comparable to the previously reported value for a metallic ZnO/Mg0.2Zn0.8O heterostructure. Insulator-to-metal transition was observed at a critical density of 6x1011 cm-2. The metallic-state channel exhibited Shubnikov-de Haas oscillations, demonstrating an electric-field tunable quantum device based on transparent oxide semiconductor.

    DOI: 10.1063/1.3035844

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  • Epitaxial Growth and Transport Properties of High-Mobility ZnO-Based Heterostructures Reviewed

    A. Tsukazaki, A. Ohtomo, M. Kawasaki

    FRONTIERS IN MATERIALS RESEARCH   10   77 - +   2008

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  • Parallel syntheses and thermoelectric properties of Ce-doped SrTiO3 thin films

    Y. F. Yamada, A. Ohtomo, M. Kawasaki

    Applied Surface Science   254 ( 3 )   768 - 771   2007.11

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    DOI: 10.1016/j.apsusc.2007.04.089

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  • Combinatorial synthesis and high throughput evaluation of thermoelectric power factor in Mg-Si-Ge ternary compounds International journal

    M. Watanabe, T. Kita, T. Fukumura, A. Ohtomo, K. Ueno, M. Kawasaki

    APPLIED SURFACE SCIENCE   254 ( 3 )   777 - 780   2007.11

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    DOI: 10.1016/j.apsusc.2007.05.095

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  • Schottky contact on a ZnO (0001) single crystal with conducting polymer International journal

    M. Nakano, A. Tsukazaki, R. Y. Gunji, K. Ueno, A. Ohtomo, T. Fukumura, M. Kawasaki

    APPLIED PHYSICS LETTERS   91 ( 14 )   142113-1-142113-3   2007.10

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    DOI: 10.1063/1.2789697

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  • Growth mode control of the free carrier density in SrTiO3-delta films International journal

    A. Ohtomo, H. Y. Hwang

    JOURNAL OF APPLIED PHYSICS   102 ( 8 )   83704-1-83704-6   2007.10

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    DOI: 10.1063/1.2798385

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  • 目に見えない電子回路につながる半導体技術 -透明な酸化物半導体の量子ホール効果を世界で初めて観測-

    大友 明

    電子情報通信学会誌   90 ( 7 )   563 - 564   2007.7

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  • Invisible electronics now in sight

    Akira Ohtomo

    The Japan Journal   4 ( 3 )   27 - 27   2007.7

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  • Recombination dynamics of excitons in Mg0.11Zn0.89O alloy films grown using the high-temperature-annealed self-buffer layer by laser-assisted molecular-beam epitaxy International journal

    Masashi Kubota, Takeyoshi Onuma, Atsushi Tsukazaki, Akira Ohtomo, Masashi Kawasaki, Takayuki Sota, Shigefusa F. Chichibu

    APPLIED PHYSICS LETTERS   90 ( 14 )   141903-1-141903-3   2007.4

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    DOI: 10.1063/1.2719168

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  • Quantum hall effect in polar oxide heterostructures International journal

    A. Tsukazaki, A. Ohtomo, T. Kita, Y. Ohno, H. Ohno, M. Kawasaki

    Science   315 ( 5817 )   1388 - 1391   2007.3

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    DOI: 10.1126/science.1137430

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  • Quantum hall effect in ZnO/MgZnO heterostructures

    Solid state physics   42 ( 9 )   559 - 567   2007

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  • A semiconductor technology towards realizing invisible electronics -The world first observation of quantum Hall effect in a transparent oxide semiconductor-

    The Institute of Electronics, Information and Communication Engineers (IEICE),The Journal of the Institute of Electronics, Information and Communication Engineers (J. IEICE)   90 ( 7 )   563 - 564   2007

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  • Insulator-to-metal transition in ZnO by electric double layer gating International journal

    Hidekazu Shimotani, Haruhiko Asanuma, Atsushi Tsukazaki, Akira Ohtomo, Masashi Kawasaki, Yoshihiro Iwasa

    Applied Physics Letters   91 ( 8 )   082106-1-082106-3   2007

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    DOI: 10.1063/1.2772781

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  • Quantum Hall effect in ZnO based heterostructures International journal

    A. Tsukazaki, A. Ohtomo, S. Akasaka, K. Nakahara, Y. Ohno, H. Ohno, M. Kawasaki

    Japanese Society of Applied Physics (Division of Solid State Physics and Application),Bulletin of Solid State Physics and Application   13 ( 2 )   73 - 78   2007

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  • Nanoparticle technology handbook

    Elsevier   2007

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  • Hole transport in p-type ZnO

    Takayuki Makino, Atsushi Tsukazaki, Akira Ohtomo, Masashi Kawasaki, Hideomi Koinuma

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   45 ( 8 A )   6346 - 6351   2006.8

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    DOI: 10.1143/JJAP.45.6346

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  • Photo-irresponsive thin-film transistor with MgxZn1-xO channel International journal

    Akira Ohtomo, Shingo Takagi, Kentaro Tamura, Takayuki Makino, Yusaburo Segawa, Hideomi Koinuma, Masashi Kawasaki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   45 ( 24-28 )   L694 - L696   2006.7

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    DOI: 10.1143/JJAP.45.L694

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  • Shifting donor-acceptor photoluminescence in N-doped ZnO International journal

    Takayuki Makino, Atsushi Tsukazaki, Akira Ohtomo, M. Kawasaki, Hideomi Koinuma

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   75 ( 7 )   073701-1-073701-4   2006.7

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    DOI: 10.1143/JPSJ.75.073701

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  • Electronic transport properties in SrTiO3-LaAiO3 solid-solution films

    A. Ohtomo, J. Nishimura, Y. Murakami, M. Kawasaki

    Applied Physics Letters   88 ( 23 )   232107-1-232107-3   2006.6

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    DOI: 10.1063/1.2210297

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  • Improvements in quantum efficiency of excitonic emissions in ZnO epilayers by the elimination of point defects

    S. F. Chichibu, T. Onuma, M. Kubota, A. Uedono, T. Sota, A. Tsukazaki, A. Ohtomo, M. Kawasaki

    Journal of Applied Physics   99 ( 9 )   093505-1-093505-6   2006.5

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    DOI: 10.1063/1.2193162

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  • A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface (vol 427, pg 423, 2004)

    A Ohtomo, HY Hwang

    NATURE   441 ( 7089 )   120 - 120   2006.5

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  • High-mobility electronic transport in ZnO thin films International journal

    A. Tsukazaki, A. Ohtomo, M. Kawasaki

    Applied Physics Letters   88 ( 15 )   152106-1-152106-3   2006.4

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    DOI: 10.1063/1.2193727

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  • Field-effect modulation of transport properties of charge-ordered La1/3Sr2/3FeO3 thin films International journal

    K Ueno, A Ohtomo, F Sato, M Kawasaki

    PHYSICAL REVIEW B   73 ( 16 )   165103-1-165103-5   2006.4

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    DOI: 10.1103/PhysRevB.73.165103

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  • Monte Carlo simulation of localization dynamics of excitons in ZnO and CdZnO quantum well structures International journal

    T Makino, K Saito, A Ohtomo, M Kawasaki, RT Senger, KK Bajaj

    JOURNAL OF APPLIED PHYSICS   99 ( 6 )   066108-1-066108-3   2006.3

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    DOI: 10.1063/1.2181431

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  • High-throughput synthesis and characterization of Mg1-xCaxO films as a lattice and valence-matched gate dielectric for ZnO based field effect transistors International journal

    J Nishii, A Ohtomo, M Ikeda, Y Yamada, K Ohtani, H Ohno, M Kawasaki

    APPLIED SURFACE SCIENCE   252 ( 7 )   2507 - 2511   2006.1

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    DOI: 10.1016/j.apsusc.2005.06.040

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  • Analysis on reflection spectra in strained ZnO thin films International journal

    T Makino, Y Segawa, M Kawasaki, A Ohtomo

    JOURNAL OF CRYSTAL GROWTH   287 ( 1 )   124 - 127   2006.1

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    DOI: 10.1016/j.jcrysgro.2005.10.054

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  • Development of high-throughput combinatorial terahertz time-domain spectrometer and its application to ternary composition-spread film

    M Ohtani, T Hitosugi, Y Hirose, J Nishimura, A Ohtomo, M Kawasaki, R Inoue, M Tonouchi, T Shimada, T Hasegawa

    APPLIED SURFACE SCIENCE   252 ( 7 )   2622 - 2627   2006.1

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    DOI: 10.1016/j.apsuse.2005.06.039

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  • Combinatorial synthesis and optical characterization of alloy and superlattice films based on SrTiO3 and LaAlO3 International journal

    A Ohkubo, A Ohtomo, J Nishimura, T Makino, Y Segawa, M Kawasaki

    APPLIED SURFACE SCIENCE   252 ( 7 )   2488 - 2492   2006.1

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    DOI: 10.1016/j.apsusc.2005.03.234

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  • Self-assembled ZnO nano-crystals and exciton lasing at room temperature International journal

    ZK Tang, M Kawasaki, A Ohtomo, H Koinuma, Y Segawa

    JOURNAL OF CRYSTAL GROWTH   287 ( 1 )   169 - 179   2006.1

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    DOI: 10.1016/j.jcrysgro.2005.10.062

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  • Majority-carrier mobilities in undoped and n-type doped ZnO epitaxial layers International journal

    T Makino, Y Segawa, A Tsukazaki, A Ohtomo, M Kawasaki

    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4   3 ( 4 )   956 - +   2006

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    DOI: 10.1002/pssc.200564636

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  • Analysis of Time-Resolved Donor–Acceptor Photoluminescence of N-Doped ZnO

    Makino Takayuki, Tsukazaki Atsushi, Ohtomo Akira, Kawasaki M., Koinuma Hideomi

    J Phys Soc Jpn   75 ( 9 )   095001-1-095001-3 - 095001-3   2006

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    Language:English   Publisher:The Physical Society of Japan (JPS)  

    DOI: 10.1143/jpsj.75.095001

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    Other Link: https://jlc.jst.go.jp/DN/JALC/00335894046?from=CiNii

  • Two different features of ZnO: transparent ZnO : Ga electrodes for InGaN-LEDs and homoepitaxial ZnO films for UV-LEDs

    K. Nakahara, H. Yuji, K. Tamura, S. Akasaka, H. Tampo, S. Niki, A. Tsukazaki, A. Ohtomo, M. Kawasaki

    ZINC OXIDE MATERIALS AND DEVICES   6122   61220N   2006

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    DOI: 10.1117/12.660552

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  • Spectral shape analysis of ultraviolet luminescence in n-type ZnO : Ga International journal

    T Makino, Y Segawa, S Yoshida, A Tsukazaki, A Ohtomo, M Kawasaki, H Koinuma

    JOURNAL OF APPLIED PHYSICS   98 ( 9 )   093520-1-093520-4   2005.11

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    DOI: 10.1063/1.2127167

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  • ZnO青色発光ダイオード

    塚崎 敦, 大友 明, 川崎 雅司

    応用物理   74 ( 10 )   1359 - 1364   2005.10

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  • Free-carrier effects on zero- and one-phonon absorption onsets of n-type ZnO International journal

    T Makino, Y Segawa, S Yoshida, A Tsukazaki, A Ohtomo, M Kawasaki, H Koinuma

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 10 )   7275 - 7280   2005.10

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    DOI: 10.1143/JJAP.44.7275

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  • High-mobility field-effect transistors based on single-crystalline ZnO channels

    Junya Nishh, Akira Ohtomo, Keita Ohtani, Hideo Ohno, Masashi Kawasaki

    Japanese Journal of Applied Physics, Part 2: Letters   44 ( 37-41 )   L1193 - L1195   2005.9

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    DOI: 10.1143/JJAP.44.L1193

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  • Electron transport in ZnO thin films International journal

    T Makino, Y Segawa, A Tsukazaki, A Ohtomo, M Kawasaki

    APPLIED PHYSICS LETTERS   87 ( 2 )   022101-1-022101-3   2005.7

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    DOI: 10.1063/1.1991994

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  • Pulsed laser deposition of thin films and superlattices based on ZnO

    Akira Ohtomo, Atsushi Tsukazaki

    Semiconductor Science and Technology   20 ( 4 )   S1 - S12   2005.4

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  • Exciton-polariton spectra and limiting factors for the room-temperature photoluminescence efficiency in ZnO International journal

    SF Chichibu, A Uedono, A Tsukazaki, T Onuma, M Zamfirescu, A Ohtomo, A Kavokin, G Cantwell, CW Litton, T Sota, M Kawasaki

    SEMICONDUCTOR SCIENCE AND TECHNOLOGY   20 ( 4 )   S67 - S77   2005.4

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    DOI: 10.1088/0268-1242/20/4/009

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  • Fabrication of ternary phase composition-spread thin film libraries and their high-throughput characterization: Ti1-x-yZrxHfyO2 for bandgap engineering International journal

    Y Yamada, T Fukumura, M Ikeda, M Ohtani, H Toyosaki, A Ohtomo, F Matsukura, H Ohno, M Kawasaki

    JOURNAL OF SUPERCONDUCTIVITY   18 ( 1 )   109 - 113   2005.2

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    DOI: 10.1007/s10948-005-2160-x

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  • 酸化亜鉛電界効果デバイスの進展と課題

    大友 明, 川崎 雅司, 大野 英男

    応用電子物性分科会誌   11 ( 1 )   26 - 33   2005.1

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  • Engineered lattice-mismatch by buffer layers in oxide heteroepitaxy

    Kawasaki Masashi, Terai Kota, Tsukazaki Atsushi, Ohnishi Tsuyoshi, Ohtomo Akira, Lippmaa Mikk

    The Japanese Association for Crystal Growth,Journal of the Japanese Association of Crystal Growth   32 ( 2 )   74 - 81   2005

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    Buffer layer is a quite useful technique for thin film growth; it can act as "glue" between substrate and film and it can relax the lattice mismatch between them. In this article, we discuss in detail the role of buffer layer to relax the lattice mismatch with taking such technologically relevant examples as ferroelectric BaTiO_3 and ultraviolet light emitting ZnO films grown on slightly lattice mismatched substrates. The interface free energy of lattice strain and relaxation by introducing dislocation is discussed from thermodynamic and kinetic view points. By taking this consideration into account, we can selectively make strained films with coherent interface and completely relaxed films. We also demonstrate a way of reducing the activation energy for introducing misfit dislocation. The use of completely relaxed films as buffer layers can mimic lattice constant tunable substrates and may open up an interesting research arena of lattice strain engineering of oxide thin films.

    DOI: 10.19009/jjacg.32.2_74

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  • Recent progresses and issues of ZnO-based field-effect transistors

    Japanese Society of Applied Physics (Division of Solid State Physics and Application),Bulletin of Solid State Physics and Application   11 ( 1 )   26 - 33   2005

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  • Fabrication of ternary phase composition-spread thin film libraries and their high-throughput characterization: Ti1-x-yZrxHf yO2 for bandgap engineering Reviewed

    Y. Yamada, T. Fukumura, M. Ikeda, M. Ohtani, H. Toyosaki, A. Ohtomo, F. Matsukura, H. Ohno, M. Kawasaki

    Journal of Superconductivity and Novel Magnetism   18 ( 1 )   109 - 113   2005

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    DOI: 10.1007/s10948-005-2160-x

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  • ZnO light-emitting diodes - Improved crystallline quality gave a new application to an old materials

    The Ceramic Society of Japan,Bulletin of the Ceramic Society of Japan   40 ( 9 )   749 - 751   2005

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  • 酸化亜鉛発光ダイオード-結晶品質の向上がもたらした古い材料の新たな応用-

    塚崎 敦, 大友 明, 川崎 雅司

    日本セラミックス協会 セラミックス   40 ( 9 )   749 - 751   2005

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  • Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO

    TSUKAZAKI A.

    Nature Mater.   4 ( 1 )   42 - 46   2005

  • 酸化亜鉛電界効果デバイス

    大友 明, 川崎 雅司, 大野 英男

    アグネ技術センター 固体物理   40 ( 6 )   407 - 414   2005

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  • Blue light-emitting diode based on ZnO

    Atsushi Tsukazaki, Masashi Kubota, Akira Ohtomo, Takeyoshi Onuma, Keita Ohtani, Hideo Ohno, Shigefusa F. Chichibu, Masashi Kawasaki

    Japanese Journal of Applied Physics, Part 2: Letters   44 ( 20-23 )   L643 - L645   2005

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    DOI: 10.1143/JJAP.44.L643

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  • Hall and field-effect mobilities of electrons accumulated at a lattice-matched ZnO/ScAIMgO(4) heterointerface International journal

    TI Suzuki, A Ohtomo, A Tsukazaki, F Sato, J Nishii, H Ohno, M Kawasaki

    ADVANCED MATERIALS   16 ( 21 )   1887 - +   2004.11

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    DOI: 10.1002/adma.200401018

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  • Gallium concentration dependence of room-temperature near-band-edge luminescence in n-type ZnO : Ga International journal

    T Makino, Y Segawa, S Yoshida, A Tsukazaki, A Ohtomo, M Kawasaki

    APPLIED PHYSICS LETTERS   85 ( 5 )   759 - 761   2004.8

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    DOI: 10.1063/1.1776630

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  • Atomic-scale imaging of nanoengineered oxygen vacancy profiles in SrTiO3 International journal

    DA Muller, N Nakagawa, A Ohtomo, JL Grazul, HY Hwang

    NATURE   430 ( 7000 )   657 - 661   2004.8

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    DOI: 10.1038/nature02756

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  • Controlled carrier generation at a polarity-discontinued perovskite heterointerface International journal

    J Nishimura, A Ohtomo, A Ohkubo, Y Murakami, M Kawasaki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   43 ( 8A )   L1032 - L1034   2004.8

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    DOI: 10.1143/JJAP.43.L1032

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  • SrTiO_3_ヘテロ構造の高移動度電子輸送

    大友 明, ファン ハロルド

    応用物理   73 ( 5 )   605 - 609   2004.5

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  • Emission from the higher-order excitons in ZnO films grown by laser molecular-beam epitaxy International journal

    A Tsukazaki, A Ohtomo, M Kawasaki, T Makino, CH Chia, Y Segawa, H Koinuma

    APPLIED PHYSICS LETTERS   84 ( 19 )   3858 - 3860   2004.5

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    DOI: 10.1063/1.1748847

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  • 一格子層の結晶成長から生まれる新しい物理

    大友 明, ファン ハロルド

    パリティ   19 ( 5 )   18 - 25   2004.5

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  • High-mobility electrons in SrTiO3 heterostructures International journal

    HY Hwang, A Ohtomo, N Nakagawa, DA Muller, JL Grazul

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   22 ( 1-3 )   712 - 716   2004.4

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    DOI: 10.1016/j.physe.2003.12.106

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  • Internal electric field effect on luminescence properties of ZnO/(Mg,Zn)O quantum wells International journal

    T Makino, A Ohtomo, CH Chia, Y Segawa, H Koinuma, M Kawasaki

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   21 ( 2-4 )   671 - 675   2004.3

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    DOI: 10.1016/j.physe.2003.11.110

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  • Modeling of grain boundary barrier modulation in ZnO invisible thin film transistors International journal

    FM Hossain, J Nishii, S Takagi, T Sugihara, A Ohtomo, T Fukumura, H Koinuma, H Ohno, M Kawasaki

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   21 ( 2-4 )   911 - 915   2004.3

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    DOI: 10.1016/j.physe.2003.11.149

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  • Surface depletion in doped SrTiO3 thin films

    A Ohtomo, HY Hwang

    APPLIED PHYSICS LETTERS   84 ( 10 )   1716 - 1718   2004.3

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    DOI: 10.1063/1.1668329

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  • Second harmonic generation in self-assembled ZnO microcrystallite thin films International journal

    XQ Zhang, ZK Tang, M Kawasaki, A Ohtomo, H Koinuma

    THIN SOLID FILMS   450 ( 2 )   320 - 323   2004.3

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    DOI: 10.1016/j.tsf.2003.11.225

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  • SIMS analysis of ZnO films co-doped with N and Ga by temperature gradient pulsed laser deposition International journal

    M Sumiya, A Tsukazaki, S Fuke, A Ohtomo, H Koinuma, M Kawasaki

    APPLIED SURFACE SCIENCE   223 ( 1-3 )   206 - 209   2004.2

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    DOI: 10.1016/S0169-4332(03)00923-1

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  • A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface International journal

    A Ohtomo, HY Hwang

    NATURE   427 ( 6973 )   423 - 426   2004.1

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    DOI: 10.1038/nature02308

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  • Optical gain in self-assembled ZnO microcrysallite thin films International journal

    XQ Zhang, Z Tang, M Kawasaki, A Ohtomo, H Koinuma

    JOURNAL OF CRYSTAL GROWTH   259 ( 3 )   286 - 290   2003.12

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    DOI: 10.1016/j.jcrysgro.2003.07.004

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  • Modeling and simulation of polycrystalline ZnO thin-film transistors International journal

    FM Hossain, J Nishii, S Takagi, A Ohtomo, T Fukumura, H Fujioka, H Ohno, H Koinuma, M Kawasaki

    JOURNAL OF APPLIED PHYSICS   94 ( 12 )   7768 - 7777   2003.12

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    DOI: 10.1063/1.1628834

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  • Layer-by-layer growth of high-optical-quality ZnO film on atomically smooth and lattice relaxed ZnO buffer layer International journal

    A Tsukazaki, A Ohtomo, S Yoshida, M Kawasaki, CH Chia, T Makino, Y Segawa, T Koida, SF Chichibu, H Koinuma

    APPLIED PHYSICS LETTERS   83 ( 14 )   2784 - 2786   2003.10

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    DOI: 10.1063/1.1615834

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  • Resonant exciton second-harmonic generation in self-assembled ZnO microcrystallite thin films International journal

    XQ Zhang, ZK Tang, M Kawasaki, A Ohtomo, H Koinuma

    JOURNAL OF PHYSICS-CONDENSED MATTER   15 ( 30 )   5191 - 5196   2003.8

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    DOI: 10.1088/0953-8984/15/30/301

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  • Temperature quenching of exciton luminescence intensity in ZnO/(Mg,Zn)O multiple quantum wells International journal

    T Makino, K Tamura, CH Chia, Y Segawa, M Kawasaki, A Ohtomo, H Koinuma

    JOURNAL OF APPLIED PHYSICS   93 ( 10 )   5929 - 5933   2003.5

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    DOI: 10.1063/1.1563295

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  • High mobility thin film transistors with transparent ZnO channels International journal

    J Nishii, FM Hossain, S Takagi, T Aita, K Saikusa, Y Ohmaki, Ohkubo, I, S Kishimoto, A Ohtomo, T Fukumura, F Matsukura, Y Ohno, H Koinuma, H Ohno, M Kawasaki

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   42 ( 4A )   L347 - L349   2003.4

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    DOI: 10.1143/JJAP.42.L347

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  • Quantitative control and detection of heterovalent impurities in ZnO thin films grown by pulsed laser deposition

    M. Sumiya, S. Fuke, A. Tsukazaki, K. Tamura, A. Ohtomo, M. Kawasaki, H. Koinuma

    Journal of Applied Physics   93 ( 5 )   2562 - 2569   2003.3

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    DOI: 10.1063/1.1542938

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  • Confinement-enhanced biexciton binding energy in ZnO/ZnMgO multiple quantum wells International journal

    CH Chia, T Makino, K Tamura, Y Segawa, M Kawasaki, A Ohtomo, H Koinuma

    APPLIED PHYSICS LETTERS   82 ( 12 )   1848 - 1850   2003.3

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    DOI: 10.1063/1.1561158

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  • Charge modulation and metallic conduction of band insulator-Mott insulator interfaces

    Akira Ohtomo

    The Physical Society of Japan,Butsuri   58 ( 6 )   425 - 429   2003

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    The nature and length scales of charge screening in complex oxides are fundamental to investigate a wide range of systems, grain boundaries in ceramics, heterointerfaces in oxide electronic devices, and complicated charge ordering phenomena in mixed valence perovskite oxides. Using an atomic-scale electron microscopy and spectroscopy, we have measured electronic structure of a band insulator-Mott insulator interface. Abrupt interface consisted of those two insulators exhibits metallic conduction associated with charge modulation.

    DOI: 10.11316/butsuri1946.58.425

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  • Size dependence of exciton-longitudinal-optical-phonon coupling in ZnO/Mg0.27Zn0.73O quantum wells International journal

    T Makino, K Tamura, CH Chia, Y Segawa, M Kawasaki, A Ohtomo, H Koinuma

    PHYSICAL REVIEW B   66 ( 23 )   233305-1-233305-3   2002.12

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    DOI: 10.1103/PhysRevB.66.233305

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  • Photoluminescence properties of ZnO epitaxial layers grown on lattice-matched ScAlMgO4 substrates International journal

    T Makino, K Tamura, CH Chia, Y Segawa, M Kawasaki, A Ohtomo, H Koinuma

    JOURNAL OF APPLIED PHYSICS   92 ( 12 )   7157 - 7159   2002.12

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    DOI: 10.1063/1.1519336

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  • Effect of MgZnO-layer capping on optical properties of ZnO epitaxial layers International journal

    T Makino, K Tamura, CH Chia, Y Segawa, M Kawasaki, A Ohtomo, H Koinuma

    APPLIED PHYSICS LETTERS   81 ( 12 )   2172 - 2174   2002.9

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    DOI: 10.1063/1.1506783

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  • Radiative recombination of electron-hole pairs spatially separated due to quantum-confined Stark and Franz-Keldish effects in ZnO/Mg0.27Zn0.73O quantum wells International journal

    T Makino, K Tamura, CH Chia, Y Segawa, M Kawasaki, A Ohtomo, H Koinuma

    APPLIED PHYSICS LETTERS   81 ( 13 )   2355 - 2357   2002.9

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    DOI: 10.1063/1.1507606

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  • Artificial charge-modulation in atomic-scale perovskite titanate superlattices International journal

    A Ohtomo, DA Muller, JL Grazul, HY Hwang

    NATURE   419 ( 6905 )   378 - 380   2002.9

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    DOI: 10.1038/nature00977

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  • Epitaxial growth and electronic structure of LaTiOx films International journal

    A Ohtomo, DA Muller, JL Grazul, HY Hwang

    APPLIED PHYSICS LETTERS   80 ( 21 )   3922 - 3924   2002.5

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    DOI: 10.1063/1.1481767

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  • Phonon replicas in ZnO/ZnMgO multiquantum wells International journal

    HD Sun, Y Segawa, M Kawasaki, A Ohtomo, K Tamura, H Koinuma

    JOURNAL OF APPLIED PHYSICS   91 ( 10 )   6457 - 6460   2002.5

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    DOI: 10.1063/1.1467627

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  • High-throughput optical characterization for the development of a ZnO-based ultraviolet semiconductor-laser

    T. Makino, C. H. Chia, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, Y. Matsumoto, H. Koinuma

    Applied Surface Science   189 ( 3-4 )   277 - 283   2002.4

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    DOI: 10.1016/S0169-4332(01)01001-7

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  • Optical properties of ZnO:Al epilayers: Observation of room-temperature many-body absorption-edge singularity

    T. Makino, T. Makino, K. Tamura, K. Tamura, C. H. Chia, C. H. Chia, Y. Segawa, Y. Segawa, M. Kawasaki, M. Kawasaki, A. Ohtomo, H. Koinuma

    Physical Review B - Condensed Matter and Materials Physics   65 ( 12 )   1212011 - 1212014   2002.3

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  • Optical properties of ZnO : Al epilayers: Observation of room-temperature many-body absorption-edge singularity International journal

    T Makino, K Tamura, CH Chia, Y Segawa, M Kawasaki, A Ohtomo, H Koinuma

    PHYSICAL REVIEW B   65 ( 12 )   121201(R)-1-121201(R)-4   2002.3

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    DOI: 10.1103/PhysRevB.65.121201

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  • Enhancement of exciton binding energies in ZnO/ZnMgO multiquantum wells

    HD Sun, T Makino, Y Segawa, M Kawasaki, A Ohtomo, K Tamura, H Koinuma

    JOURNAL OF APPLIED PHYSICS   91 ( 4 )   1993 - 1997   2002.2

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    DOI: 10.1063/1.1445280

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  • Observation of biexciton emission in ZnO/ZnMgO multi-quantum wells International journal

    HD Sun, Y Segawa, T Makino, CH Chia, M Kawasaki, A Ohtomo, K Tamura, H Koinuma

    PHYSICA STATUS SOLIDI B-BASIC RESEARCH   229 ( 2 )   867 - 870   2002.1

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    DOI: 10.1002/1521-3951(200201)229:2<867::AID-PSSB867>3.0.CO;2-O

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  • Optical properties of ZnO : Al epilayers and of undoped epilayers capped by wider-gap MgZnO grown by laser MBE International journal

    T Makino, K Tamura, CH Chia, Y Segawa, M Kawasaki, A Ohtomo, H Koinuma

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   229 ( 2 )   853 - 857   2002.1

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    DOI: 10.1002/1521-3951(200201)229:2<853::AID-PSSB853>3.0.CO;2-7

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  • Well-width dependence of radiative and nonradiative lifetimes in ZnO-based multiple quantum wells International journal

    CH Chia, T Makino, Y Segawa, M Kawasaki, A Ohtomo, K Tamura, H Koinuma

    PHYSICA STATUS SOLIDI B-BASIC RESEARCH   229 ( 2 )   863 - 866   2002.1

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    DOI: 10.1002/1521-3951(200201)229:2<863::AID-PSSB863>3.0.CO;2-3

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  • High throughput x-ray diffractometer for combinatorial epitaxial thin films International journal

    M Ohtani, T Fukumura, A Ohtomo, T Kikuchi, K Omote, H Koinuma, M Kawasaki

    COMBINATORIAL AND ARTIFICIAL INTELLIGENCE METHODS IN MATERIALS SCIENCE   700 ( No. )   125 - 130   2002

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  • Exciton localization in (Cd,Zn)O epilayers and (Cd,Zn)O/(Mg,Zn)O multi-quantum wells on lattice matched substrates International journal

    T Makino, NT Tuan, CH Chia, Y Segawa, M Kawasaki, A Ohtomo, K Tamura, H Koinuma

    INTERNATIONAL JOURNAL OF MODERN PHYSICS B   15 ( 28-30 )   3853 - 3856   2001.12

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    DOI: 10.1142/s0217979201008834

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  • Concurrent x-ray diffractometer for high throughput structural diagnosis of epitaxial thin films International journal

    M Ohtani, T Fukumura, M Kawasaki, K Omote, T Kikuchi, J Harada, A Ohtomo, M Lippmaa, T Ohnishi, D Komiyama, R Takahashi, Y Matsumoto, H Koinuma

    APPLIED PHYSICS LETTERS   79 ( 22 )   3594 - 3596   2001.11

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    DOI: 10.1063/1.1415402

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  • Well-width dependence of radiative and nonradiative recombination times in ZnO/Mg0.12Zn0.88O multiple quantum wells International journal

    CH Chia, T Makino, Y Segawa, M Kawasaki, A Ohtomo, K Tamura, H Koinuma

    JOURNAL OF APPLIED PHYSICS   90 ( 7 )   3650 - 3652   2001.10

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    DOI: 10.1063/1.1396827

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  • Strain effects on exciton resonance energies of ZnO epitaxial layers International journal

    T Makino, T Yasuda, Y Segawa, A Ohtomo, K Tamura, M Kawasaki, H Koinuma

    APPLIED PHYSICS LETTERS   79 ( 9 )   1282 - 1284   2001.8

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    DOI: 10.1063/1.1398328

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  • Parallel integration and characterization of nanoscaled epitaxial lattices by concurrent molecular layer epitaxy and diffractometry International journal

    T Ohnishi, D Komiyama, T Koida, S Ohashi, C Stauter, H Koinuma, A Ohtomo, M Lippmaa, N Nakagawa, M Kawasaki, T Kikuchi, K Omote

    APPLIED PHYSICS LETTERS   79 ( 4 )   536 - 538   2001.7

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    DOI: 10.1063/1.1385587

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  • Biexciton emission from ZnO/Zn0.74Mg0.26O multiquantum wells International journal

    HD Sun, T Makino, Y Segawa, M Kawasaki, A Ohtomo, K Tamura, H Koinuma

    APPLIED PHYSICS LETTERS   78 ( 22 )   3385 - 3387   2001.5

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    DOI: 10.1063/1.1375830

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  • Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wells International journal

    T Makino, NT Tuan, HD Sun, CH Chia, Y Segawa, M Kawasaki, A Ohtomo, K Tamura, T Suemoto, H Akiyama, M Baba, S Saito, T Tomita, H Koinuma

    APPLIED PHYSICS LETTERS   78 ( 14 )   1979 - 1981   2001.4

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    DOI: 10.1063/1.1357451

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  • Temperature dependence of excitonic absorption spectra in ZnO/Zn0.88Mg0.12O multiquantum wells grown on lattice-matched substrates International journal

    HD Sun, T Makino, NT Tuan, Y Segawa, M Kawasaki, A Ohtomo, K Tamura, H Koinuma

    APPLIED PHYSICS LETTERS   78 ( 17 )   2464 - 2466   2001.4

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    DOI: 10.1063/1.1367300

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  • Band gap engineering based on MgxZn1-xO and CdyZn1-yO ternary alloy films International journal

    T Makino, Y Segawa, M Kawasaki, A Ohtomo, R Shiroki, K Tamura, T Yasuda, H Koinuma

    APPLIED PHYSICS LETTERS   78 ( 9 )   1237 - 1239   2001.2

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    DOI: 10.1063/1.1350632

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  • Well-width dependence of exciton-phonon coupling strength in ZnO/(Mg,Zn)O multiple quantum wells grown by combinatorial laser molecular-beam epitaxy

    T Makino, HD Sun, TT Nguyen, Y Segawa, CH Chia, M Kawasaki, A Ohtomo, K Tamura, H Koinuma

    COMBINATORIAL AND COMPOSITION SPREAD TECHNIQUES IN MATERIALS AND DEVICE DEVELOPMENT II   4281   59 - 67   2001

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    DOI: 10.1117/12.424746

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  • Stimulated emission spectra from ZnO/Zn1-xMgxO multi-quantum wells

    HD Sun, T Makino, NT Tuan, Y Segawa, ZK Tang, GKL Wong, M Kawasaki, A Ohtomo, K Tamura, H Koinuma

    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II   87   1555 - 1556   2001

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  • Optically pumped stimulated emission in ZnO/ZnMgO multiple quantum wells prepared by combinatorial techniques

    HD Sun, T Makino, NT Tuan, Y Segawa, ZK Tang, GKL Wong, M Kawasaki, A Ohtomo, K Tamura, H Koinuma

    COMBINATORIAL AND COMPOSITION SPREAD TECHNIQUES IN MATERIALS AND DEVICE DEVELOPMENT II   4281   68 - 76   2001

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    Proceedings of 25th International conference on Physics of Semiconductors   2   1551 - 1551   2001

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  • High Throughput Research on ZnO Films and Superlattices by Combinatorial Methodology

    M. Kawasaki, A. Ohtomo, K. Tamura, T. Fukumura, Zhengwu Ji, H. Kimura, A. Tsukazaki, H. Saito, C. Hirose, Y. Matsumoto, H. Koinuma, T, Makino H, D. Sun, Y. Se

    13th Int’l Conf. on Crystal Growth in Conjunction with 11th Int’l Conf. on Vapor Growth and Epitaxy   590   2001

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  • Time-resolved luminescence spectra in (Cd,Zn)O/(Mg,Zn)O multi-quantum wells on lattice-matched substrates

    T Makino, NT Tuan, Y Segawa, CH Chia, M Kawasaki, A Ohtomo, K Tamura, H Koinuma

    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II   87   1551 - 1552   2001

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  • Exciton localization in (Cd,Zn)O epilayers and (Cd,Zn)O/(Mg,Zn)O multi-quantum wells on lattice-matched substrates Reviewed

    T Makino, NT Tuan, CH Chia, Y Segawa, M Kawasaki, A Ohtomo, K Tamura, H Koinuma

    PROCEEDINGS OF THE 2000 INTERNATIONAL CONFERENCE ON EXCITONIC PROCESSES IN CONDENSED MATTER   285 - 288   2001

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  • Stimulated emission induced by exciton-exciton scattering in ZnO/ZnMgO multiquantum wells up to room temperature International journal

    HD Sun, T Makino, NT Tuan, Y Segawa, ZK Tang, GKL Wong, M Kawasaki, A Ohtomo, K Tamura, H Koinuma

    APPLIED PHYSICS LETTERS   77 ( 26 )   4250 - 4252   2000.12

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    DOI: 10.1063/1.1333687

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  • Novel semiconductor technologies of ZnO films towards ultraviolet LEDs and invisible FETs International journal

    A Ohtomo, M Kawasaki

    IEICE TRANSACTIONS ON ELECTRONICS   E83C ( 10 )   1614 - 1617   2000.10

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  • Room-temperature stimulated emission of excitons in ZnO/(Mg, Zn)O superlattices International journal

    A Ohtomo, K Tamura, M Kawasaki, T Makino, Y Segawa, ZK Tang, GKL Wong, Y Matsumoto, H Koinuma

    APPLIED PHYSICS LETTERS   77 ( 14 )   2204 - 2206   2000.10

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    DOI: 10.1063/1.1315340

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  • In-plane anisotropic strain of ZnO closely packed microcrystallites grown on tilted (0001) sapphire International journal

    F Siah, Z Yang, ZK Tang, GKL Wong, M Kawasaki, A Ohtomo, H Koinuma, Y Segawa

    JOURNAL OF APPLIED PHYSICS   88 ( 5 )   2480 - 2483   2000.9

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    DOI: 10.1063/1.1287527

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  • Radiative and nonradiative recombination processes in lattice-matched (Cd,Zn)O/(Mg,Zn)O multiquantum wells International journal

    T Makino, CH Chia, NT Tuan, Y Segawa, M Kawasaki, A Ohtomo, K Tamura, H Koinuma

    APPLIED PHYSICS LETTERS   77 ( 11 )   1632 - 1634   2000.9

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    DOI: 10.1063/1.1308540

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  • Erratum: Exciton spectra of ZnO epitaxial layers on lattice-matched substrates grown with laser-molecular-beam epitaxy (Appl. Phys. Lett. (2000) 76 (3549) (10.1063/1.126703)) Reviewed

    T. Makino, C. H. Chia, N. T. Tuan, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura, H. Koinuma

    Applied Physics Letters   77 ( 9 )   1405   2000.8

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    DOI: 10.1063/1.1290276

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  • C-V Characteristics of ZnO Thin-Film Field Effect Transistor Structures Formed on Glass Substrates

    OHMAKI Y., KISHIMOTO S., OHNO Y., MATSUKURA F., OHNO H., SAIKUSA K., AITA T., OHTOMO A., KAWASAKI M.

    2000   132 - 133   2000.8

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  • Exciton spectra of ZnO epitaxial layers on lattice-matched substrates grown with laser-molecular-beam epitaxy (vol 76, pg 3549, 2000

    T Makino, CH Chia, NT Tuan, Y Segawa, M Kawasaki, A Ohtomo, K Tamura, H Koinuma

    APPLIED PHYSICS LETTERS   77 ( 9 )   1405 - 1405   2000.8

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  • Room-temperature luminescence of excitons in ZnO/(Mg, Zn)O multiple quantum wells on lattice-matched substrates International journal

    T Makino, CH Chia, NT Tuan, HD Sun, Y Segawa, M Kawasaki, A Ohtomo, K Tamura, H Koinuma

    APPLIED PHYSICS LETTERS   77 ( 7 )   975 - 977   2000.8

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    DOI: 10.1063/1.1289066

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  • Growth mode and surface morphology of a GaN film deposited along the N-face polar direction on c-plane sapphire substrate International journal

    M Sumiya, K Yoshimura, T Ito, K Ohtsuka, S Fuke, K Mizuno, M Yoshimoto, H Koinuma, A Ohtomo, M Kawasaki

    JOURNAL OF APPLIED PHYSICS   88 ( 2 )   1158 - 1165   2000.7

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    DOI: 10.1063/1.373791

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  • Optical spectra in ZnO thin films on lattice-matched substrates grown with laser-MBE method

    T. Makino, G. Isoya, Y. Segawa, C. H. Chia, T. Yasuda, M. Kawasaki, A. Ohtomo, K. Tamura, H. Koinuma

    Journal of Crystal Growth   214   289 - 293   2000.6

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    DOI: 10.1016/S0022-0248(00)00094-4

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  • Combinatorial laser MBE synthesis of 3d ion doped epitaxial ZnO thin films International journal

    ZW Jin, M Murakami, T Fukumura, Y Matsumoto, A Ohtomo, M Kawasaki, H Koinuma

    JOURNAL OF CRYSTAL GROWTH   214   55 - 58   2000.6

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    DOI: 10.1016/S0022-0248(00)00058-0

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  • Lateral grain size and electron mobility in ZnO epitaxial films grown on sapphire substrates International journal

    A Ohtomo, H Kimura, K Saito, T Makino, Y Segawa, H Koinuma, M Kawasaki

    JOURNAL OF CRYSTAL GROWTH   214   284 - 288   2000.6

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    DOI: 10.1016/S0022-0248(00)00093-2

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  • Epitaxial growth of ZnO films on lattice-matched ScAlMgO4(0001) substrates International journal

    K Tamura, A Ohtomo, K Saikusa, Y Osaka, T Makino, Y Segawa, M Sumiya, S Fuke, H Koinuma, M Kawasaki

    JOURNAL OF CRYSTAL GROWTH   214   59 - 62   2000.6

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    DOI: 10.1016/S0022-0248(00)00059-2

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  • Concept and development of combinatorial laser MBE for oxide electronics International journal

    H Koinuma, M Kawasaki, T Itoh, A Ohtomo, M Murakami, ZW Jin, Y Matsumoto

    PHYSICA C   335 ( 1-4 )   245 - 250   2000.6

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    DOI: 10.1016/S0921-4534(00)00178-7

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  • Temperature dependence of four-wave-mixing spectra in ZnO thin films on sapphire substrates grown with laser MBE International journal

    T Makino, NT Tuan, Y Segawa, CH Chia, A Ohtomo, M Kawasaki, H Koinuma

    JOURNAL OF LUMINESCENCE   87-9   210 - 212   2000.5

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    DOI: 10.1016/S0022-2313(99)00264-1

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  • Optical and photoelectrical properties of oriented ZnO films International journal

    JW Tomm, B Ullrich, XG Qiu, Y Segawa, A Ohtomo, M Kawasaki, H Koinuma

    JOURNAL OF APPLIED PHYSICS   87 ( 4 )   1844 - 1848   2000.2

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    DOI: 10.1063/1.372101

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  • A convergent beam, parallel detection X-ray diffraction system for characterizing combinatorial epitaxial thin films

    K Omote, T Kikuchi, J Harada, M Kawasaki, A Ohtomo, M Ohtani, T Ohnishi, D Komiyama, H Koinuma

    COMBINATORIAL AND COMPOSITION SPREAD TECHNIQUES IN MATERIALS AND DEVICE DEVELOPMENT   3941   84 - 91   2000

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  • Exciton spectra of ZnO thin films on lattice-matched substrates grown with laser MBE method

    MAKINO T, CHIA C H, TUAN N T, SEGAWA Y, KAWASAKI M, OHTOMO A, TAMURA K, KOINUMA H

    Appl. Phys. Lett.   76 ( 24 )   3549 - 3551   2000

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  • Investigation of ZnO/sapphire interface and formation of ZnO nanocrystalline by laser MBE

    I. Ohkubo, Y. Matsumoto, A. Ohtomo, T. Ohnishi, A. Tsukazaki, M. Lippmaa, H. Koinuma, M. Kawasaki

    Applied Surface Science   159   514 - 519   2000

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    DOI: 10.1016/S0169-4332(00)00138-0

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  • The use of parallel synthesis and characterization techniques in thin film growth dynamics studies

    Proceedings of 4th Symposium on Atomic-scale Surface and Interface Dynamics   4   431 - 436   2000

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  • Optical characterization for combinatorial systems based on semiconductor ZnO

    T Makino, G Isoya, Y Segawa, CH Chia, T Yasuda, M Kawasaki, A Ohtomo, K Tamura, Y Matsumoto, H Koinuma

    COMBINATORIAL AND COMPOSITION SPREAD TECHNIQUES IN MATERIALS AND DEVICE DEVELOPMENT   3941   28 - 35   2000

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  • High throughput optimizations of alloy and doped films based on ZnO and parallel synthesis of ZnO/MgxZn1-xO quantum wells using combinatorial laser MBE towards ultraviolet laser

    A Ohtomo, T Makino, K Tamura, Y Matsumoto, Y Segawa, ZK Tang, GKL Wong, H Koinuma, M Kawasaki

    COMBINATORIAL AND COMPOSITION SPREAD TECHNIQUES IN MATERIALS AND DEVICE DEVELOPMENT   3941   70 - 81   2000

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  • Can ZnO eat market in optoelectronic applications?

    KAWASAKI M., TAMURA K., SAIKUSA K., AITA T., TSUKAZAKI A., OHTOMO A., JIN Z. G., MATSUMOTO Y., FUKUMURA T., KOINUMA H., OHMAKI Y., KISHIMOTO S., OHNO Y., MATSUKURA F., OHNO H., MAKINO T., TUAN N. T., SUN H. D., CHIA C. H., SEGAWA Y., TANG Z. K., WANG G. K. L.

    Extended abstracts of 2000 International Conference on Solid State Devices and Materials   ,128-129   128 - 129   2000

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  • Exploration of new properties of oxides by the growth control using pulsed laser epitaxy

    H Koinuma, T Koida, D Komiyama, M Lippmaa, A Ohtomo, M Kawasaki

    MATERIALS SCIENCE OF NOVEL OXIDE-BASED ELECTRONICS   623   329 - 340   2000

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  • Thermal stability of supersaturated MgxZn1-xO alloy films and MgxZn1-xO/ZnO heterointerfaces International journal

    A Ohtomo, R Shiroki, Ohkubo, I, H Koinuma, M Kawasaki

    APPLIED PHYSICS LETTERS   75 ( 26 )   4088 - 4090   1999.12

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    DOI: 10.1063/1.125545

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  • In-plane and polar orientations of ZnO thin films grown on atomically flat sapphire International journal

    Ohkubo, I, A Ohtomo, T Ohnishi, Y Mastumoto, H Koinuma, M Kawasaki

    SURFACE SCIENCE   443 ( 1-2 )   L1043 - L1048   1999.12

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    DOI: 10.1016/S0039-6028(99)01024-9

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  • An oxide-diluted magnetic semiconductor: Mn-doped ZnO International journal

    T Fukumura, ZW Jin, A Ohtomo, H Koinuma, M Kawasaki

    APPLIED PHYSICS LETTERS   75 ( 21 )   3366 - 3368   1999.11

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    DOI: 10.1063/1.125353

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  • Single crystalline ZnO films grown on lattice-matched ScAlMgO4(0001) substrates International journal

    A Ohtomo, K Tamura, K Saikusa, K Takahashi, T Makino, Y Segawa, H Koinuma, M Kawasaki

    APPLIED PHYSICS LETTERS   75 ( 17 )   2635 - 2637   1999.10

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    DOI: 10.1063/1.125102

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  • Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices International journal

    A Ohtomo, M Kawasaki, Ohkubo, I, H Koinuma, T Yasuda, Y Segawa

    APPLIED PHYSICS LETTERS   75 ( 7 )   980 - 982   1999.8

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    DOI: 10.1063/1.124573

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  • Combinatorial laser molecular beam epitaxy (MBE) growth of Mg-Zn-O alloy for band gap engineering International journal

    Y Matsumoto, M Murakami, ZW Jin, A Ohtomo, M Lippmaa, M Kawasaki, H Koinuma

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   38 ( 6AB )   L603 - L605   1999.6

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    DOI: 10.1143/jjap.38.L603

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  • An efficient way of doping experiments: Combinatorial laser MBE synthesis of epitaxial ZnO thin film doped with Sc, Ti, V, Cr, Mn, Fe, Co, Ni, and Cu

    Extended Abstracts of 5th Symposium on the Physics and Application of Spin-related Phenomena in Semiconductors   ,46-49   1999

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  • ZnMnO as novel diluted magnetic semiconductor system

    Proceedings of 3rd Symposium on Atomic-scale Surface and Interface Dynamics   3   157 - 160   1999

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  • Epitaxial growth of single-crystalline ZnO films towards novel transparent opt-electronics

    Proceedings of 3rd Symposium on Atomic-scale Surface and Interface Dynamics   3   147 - 150   1999

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  • Control of the polarity and surface morphology of GaN films deposited on C-plane sapphire

    M Sumiya, T Ohnishi, M Tanaka, A Ohtomo, M Kawasaki, M Yoshimoto, H Koinuma, K Ohtsuka, S Fuke

    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH   4   U642-U649   1999

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  • ZnO ultraviolet lasers

    Technical Information Center,Material Integration   12 ( 12 )   9 - 14   1999

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  • ZnO/MgxZn1-xO quantum structures

    Extended Abstracts of 1st international Workshop on ZnO   ,17-17   1999

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  • GaN growth on ozonized sapphire(0001) substrates by MOVPE International journal

    T Honda, A Inoue, M Mori, T Shirasawa, N Mochida, K Saotome, T Sakaguchi, A Ohtomo, M Kawasaki, H Koinuma, F Koyama, K Iga

    JOURNAL OF CRYSTAL GROWTH   195 ( 1-4 )   319 - 322   1998.12

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    DOI: 10.1016/S0022-0248(98)00692-7

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  • Atom technology for Josephson tunnel junctions: SrTiO3 substrate surface International journal

    M Lippmaa, K Takahashi, A Ohtomo, S Ohashi, T Ohnishi, N Nakagawa, T Sato, M Iwatsuki, H Koinuma, M Kawasaki

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   56 ( 2-3 )   111 - 116   1998.11

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    DOI: 10.1016/S0921-5107(98)00225-6

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  • Coaxial impact-collision ion scattering spectroscopy analysis of ZnO thin films and single crystals International journal

    T Ohnishi, A Ohtomo, Ohkuboa, I, M Kawasaki, M Yoshimoto, H Koinuma

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   56 ( 2-3 )   256 - 262   1998.11

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    DOI: 10.1016/S0921-5107(98)00241-4

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  • Fabrication of alloys and superlattices based on ZnO towards ultraviolet laser International journal

    A Ohtomo, M Kawasaki, Y Sakurai, Ohkubo, I, R Shiroki, Y Yoshida, T Yasuda, Y Segawa, H Koinuma

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   56 ( 2-3 )   263 - 266   1998.11

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    DOI: 10.1016/S0921-5107(98)00218-9

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  • Excitonic ultraviolet laser emission at room temperature from naturally made cavity in ZnO nanocrystal thin films International journal

    M Kawasaki, A Ohtomo, Ohkubo, I, H Koinuma, ZK Tang, P Yu, GKL Wong, BP Zhang, Y Segawa

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   56 ( 2-3 )   239 - 245   1998.11

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    DOI: 10.1016/S0921-5107(98)00248-7

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  • Observation of SrTiO(3) step edge dynamics by real-time high-temperature STM International journal

    M Lippmaa, M Kawasaki, A Ohtomo, T Sato, M Iwatsuki, H Koinuma

    APPLIED SURFACE SCIENCE   130   582 - 586   1998.6

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    DOI: 10.1016/S0169-4332(98)00119-6

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  • Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films International journal

    ZK Tang, GKL Wong, P Yu, M Kawasaki, A Ohtomo, H Koinuma, Y Segawa

    APPLIED PHYSICS LETTERS   72 ( 25 )   3270 - 3272   1998.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/1.121620

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  • Room temperature ultraviolet laser emission from ZnO nanocrystal thin films grown by laser MBE International journal

    A Ohtomo, M Kawasaki, Y Sakurai, Y Yoshida, H Koinuma, P Yu, ZK Tang, GKL Wong, Y Segawa

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   54 ( 1-2 )   24 - 28   1998.6

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    DOI: 10.1016/S0921-5107(98)00120-2

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  • Dimension controlled epitaxy of quantum functional oxide thin films by pulsed-laser processes International journal

    H Koinuma, XG Qiu, R Tsuchiya, N Kanda, J Nishino, A Ohtomo, M Kawasaki

    APPLIED SURFACE SCIENCE   127   403 - 409   1998.5

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    DOI: 10.1016/S0169-4332(97)00664-8

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  • MgxZn1-xO as a II-VI widegap semiconductor alloy International journal

    A Ohtomo, M Kawasaki, T Koida, K Masubuchi, H Koinuma, Y Sakurai, Y Yoshida, T Yasuda, Y Segawa

    APPLIED PHYSICS LETTERS   72 ( 19 )   2466 - 2468   1998.5

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    DOI: 10.1063/1.121384

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  • Room-temperature gain spectra and lasing in microcrystalline ZnO thin films International journal

    P Yu, ZK Tang, GKL Wong, M Kawasaki, A Ohtomo, H Koinuma, Y Segawa

    JOURNAL OF CRYSTAL GROWTH   184   601 - 604   1998.2

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    DOI: 10.1016/S0022-0248(98)80126-7

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  • Determination of surface polarity of c-axis oriented ZnO films by coaxial impact-collision ion scattering spectroscopy

    T Ohnishi, A Ohtomo, M Kawasaki, K Takahashi, M Yoshimoto, H Koinuma

    APPLIED PHYSICS LETTERS   72 ( 7 )   824 - 826   1998.2

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    DOI: 10.1063/1.120905

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  • Fabrication of oxide based ultraviolet laser

    Maruzen,Parity   13 ( 1 )   48 - 52   1998

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  • Romm temperature excitonic laser emission form ZnO nanocrystals

    Agne Gijyutsu Center,Solid State Physics   33 ( 1 )   59 - 64   1998

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  • ZnO alloy system and quantum structures towards ultraviolet laser

    Proceedings of 2nd International Symposium on Blue Laser and Light Emitting Diodes   ,711-714   1998

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  • Excitonic ultraviolet laser emission at room temperature from naturally made cavity in ZnO nanocrystalline thin films

    Proceedings of 2nd Symposium on Atomic-scale Surface and Interface Dynamics   2   225 - 231   1998

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  • Excitonic gain and laser emission in ZnO microcrystallites at room temperature International journal

    P Yu, ZK Tang, GKL Wong, M Kawasaki, A Ohtomo, H Koinuma, Y Segawa

    PHYSICS OF LOW-DIMENSIONAL STRUCTURES   1-2   243 - 251   1998

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  • Ultraviolet excitonic laser action at room temperature in ZnO nanocrystalline epitaxial films International journal

    M Kawasaki, A Ohtomo, H Koinuma, Y Sakurai, Y Yoshida, ZK Tang, P Yu, GKL Wang, Y Segawa

    SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2   264-2 ( 268 )   1459 - 1462   1998

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    DOI: 10.4028/www.scientific.net/MSF.264-268.1459

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  • ZnO quantum structures towards UV diode lasers

    Extended Abstracts of 1998 International Conference on Sold State Devices and Materials   356 ( 357 )   1998

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  • Double heterostructure based on ZnO and MgxZn1-xO International journal

    A. Ohtomo, M. Kawasaki, T. Koida, H. Koinuma, Y. Sakurai, Y. Yoshida, M. Sumiya, S. Fuke, T. Yasuda, Y. Segawa

    Materials Science Forum, Silicon Carbide, III-Nitrides and Related Materials   264-268   1463 - 1466   1998

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    We propose a widegap semiconductor, MgxZn1-xO, as a barrier layer for ultraviolet light emitting devices based on ZnO. MgxZn1-xO single layer films and double heterostructures of MgxZn1-xO / ZnO /MgxZn1-xO were fabricated by pulsed laser deposition on sapphire (0001) substrates. The: photoluminescence peak of MgxZn1-xO shifted from 3.36 eV (x=0) to 3.87 eV (x=0.25) with increasing x. Epitaxial double heterostructures were successfuly grown as veryfied by X-ray diffraction and secoundary ion mass spectrometry. Clear exciton emission in double heterostructure indicates that this alloy system is promising for the light emitting devices.

    DOI: 10.4028/www.scientific.net/MSF.264-268.1463

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  • A novel oxide DMS: Mn doped ZnO

    Extended Abstracts of 4th Symposium on the Physics and Application of Spin-related Phenomena in Semiconductors   ,109-112   1998

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  • A study of SrTiO3 surface dynamics during wet etching and high-temperature annealing

    Proceedings of 2nd Symposium on Atomic-scale Surface and Interface Dynamics   2   205 - 210   1998

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  • Alloys and superlattices of ZnO based oxide semiconductors towards ultraviolet emitting devices

    Extended Abstracts of the 17th Electric Materials Symposium   ,79-80   1998

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  • Ultraviolet spontaneous and stimulated emissions from ZnO microcrystallite thin films at room temperature International journal

    P Zu, ZK Tang, GKL Wong, M Kawasaki, A Ohtomo, H Koinuma, Y Segawa

    SOLID STATE COMMUNICATIONS   103 ( 8 )   459 - 463   1997.8

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    DOI: 10.1016/S0038-1098(97)00216-0

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  • Growth of ZnO thin film by laser MBE: Lasing of exciton at room temperature International journal

    Y Segawa, A Ohtomo, M Kawasaki, H Koinuma, ZK Tang, P Yu, GKL Wong

    PHYSICA STATUS SOLIDI B-BASIC RESEARCH   202 ( 2 )   669 - 672   1997.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/1521-3951(199708)202:2<669::AID-PSSB669>3.0.CO;2-T

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  • Construction and superfunction of metal-oxide nanostructures and interfaces International journal

    M Kawasaki, R Tsuchiya, N Kanda, A Ohtomo, H Koinuma

    SCIENCE REPORTS OF THE RESEARCH INSTITUTES TOHOKU UNIVERSITY SERIES A-PHYSICS CHEMISTRY AND METALLURGY   44 ( 2 )   207 - 210   1997.3

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  • Laser MBE of ceramic thin films for future electronics International journal

    H Koinuma, N Kanda, J Nishino, A Ohtomo, H Kubota, M Kawasaki, M Yoshimoto

    APPLIED SURFACE SCIENCE   109   514 - 519   1997.2

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    DOI: 10.1016/S0169-4332(96)00627-7

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  • Study of SrTiO_3_ surface dynamics by real-time STM at high temperatures

    Mikk Lippmaa, Akira Ohtomo, Masashi Kawasaki

    1997.1

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  • ZnOの量子構造の形成と室温レーザー発振

    川崎 雅司, 大友 明, 鯉沼 秀臣, 湯 子康, P. Yu, G. K. L. Wong, 瀬川 勇三朗

    日本学術振興会第162委員会 第6回研究会資料   1997.1

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  • 表面界面・ハイヤーオーダーエピタキシ

    大友 明, 川崎 雅司

    1997.1

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    Language:Japanese   Publisher:電子協酸化物エレクトロニクス研究報告書  

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  • Oxide quantum structures for future electro-photonics

    M Kawasaki, A Ohtomo, R Tsuchiya, J Nishino, H Koinuma

    EPITAXIAL OXIDE THIN FILMS III   474   303 - 312   1997

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  • Transmission electron microscopy study of room temperature lasing epitaxial ZnO films on sapphire

    Material Research Society Symposium Proceedings   482   423   1997

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  • Room temperature ultraviolet laser emission from microstructured ZnO thin film

    Nonlinear Optics   18   355 - 362   1997

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  • Atomic control of SrTiO3 surface for perfect epitaxy of perovskite oxides International journal

    M Kawasaki, A Ohtomo, T Arakane, K Takahashi, M Yoshimoto, H Koinuma

    APPLIED SURFACE SCIENCE   107   102 - 106   1996.11

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    DOI: 10.1016/S0169-4332(96)00512-0

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  • Advanced processing and characterization of SrTiO3 single crystals and bicrystals for high-T-c superconducting film substrate International journal

    K Takahashi, A Ohtomo, M Kawasaki, H Koinuma

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   41 ( 1 )   152 - 156   1996.10

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/S0921-5107(96)01643-1

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  • Room temperature luminescence and stimulated UV emission from ZnO

    Proceedings of The 23rd International Conference on The Physics of Semiconductors   ,1453-1456   1996

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  • 材料系の固体物理学

    Zolotoyabko, Emil, 大友, 明, 鵜沼, 毅也, 早水, 裕平, 山田, 智明

    東京化学同人  2024.4  ( ISBN:9784807920426

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    Total pages:xiii, 221p   Language:Japanese  

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  • 固体材料の科学

    Tilley, R. J. D., 滝沢, 博胤, 田中, 勝久, 大友, 明, 貝沼, 亮介

    東京化学同人  2015.6  ( ISBN:9784807908585

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  • 次世代半導体としての酸化物半導体の信頼性と可能性

    大友 明

    ポストシリコン半導体―ナノ成膜ダイナミクスと基板・界面効果―  2013.6  ( ISBN:9784864690591

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  • 酸化物界面が創成する新機能

    大友 明

    独立行政法人 日本学術振興会  2013.4 

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  • バンドギャップエンジニアリング ―次世代高効率デバイスへの挑戦―

    大友 明

    シーエムシー出版  2011.12  ( ISBN:9784781305080

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  • 人工格子が切り拓く酸化物エレクトロニクス

    大友明

    社団法人 蔵前工業会  2011.11 

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  • Local Crystal Structure Analysis for La-doped SrTiO_3 Super Lattice Thin Film based on STEM and EELS

    SAITO Mitsuhiro, TSUKIMOTO Susumu, WANG Zhongchang, IKUHARA Yuichi, MIZOGUCHI Teruyasu, OKUDE Masaki, OHOTOMO Akira, KAWASAKI Masashi, KITA Takuji

    The Japan Institute of Metals and Materials  2009.12 

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  • Optical and electrical properties of ZnO and related hetero-structures

    Vietnam Academic Press Proceedings of the International Workshop on Photonics and Applications (Advances in Optics, Photonics, Spectroscopy & Applications V, edited by P. Brechignac, K. Hakuta, H. Lim, N.V. Hieu, N.D. Hung and V. A. Orlovich)  2009 

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  • Optical and electrical properties of ZnO and related hetero-structures

    Vietnam Academic Press Proceedings of the International Workshop on Photonics and Applications (Advances in Optics, Photonics, Spectroscopy & Applications V, edited by P. Brechignac, K. Hakuta, H. Lim, N.V. Hieu, N.D. Hung and V. A. Orlovich)  2009 

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  • Epitaxial growth and transport properties of high-mobility ZnO-based heterostructures

    Springer Advances in Materials Research  2008 

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  • Engineering of ZnO based quantum well structures towards a solid state lighting device

    JFE 21st Century Foundation,Proceedings of Academic Research in 2007 founded by JFE 21st Century Foundation  2008 

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  • Epitaxial growth and transport properties of high-mobility ZnO-based heterostructures

    Springer Advances in Materials Research  2008 

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  • 固体照明光源に最適化したZnO量子井戸の設計と作製

    財団法人JFE21世紀財団 財団法人JFE21世紀財団2007年度大学研究助成技術研究報告書  2008 

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  • Evaluation methods for heterostructures

    Akira Ohtomo

    Nanoparticle Technology Handbook  2007.10 

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  • 未来は若い探究心の中から生まれてくる -最先端科学の荒海を風にのって渡っていく-

    大友 明

    東北大学(100周年記念出版)  2007.8 

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  • Invisible electronics now in sight

    2007 

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  • The future springs from inquiring young minds - Riding on the wind across the rough seas of leading-edge science -

    Tohoku University,Tohoku University  2007 

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  • The future springs from inquiring young minds -Riding on the wind across the rough seas of leading-edge science-

    Tohoku University Tohoku University  2007 

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  • The future springs from inquiring young minds -Riding on the wind across the rough seas of leading-edge science-

    Tohoku University Tohoku University  2007 

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  • Wide bandgap semiconductors and related optoelectronic devices

    Springer-Verlag GmbH  2007 

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  • Wide bandgap semiconductors and related optoelectronic devices

    Springer-Verlag GmbH  2007 

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  • 未来は若い探究心の中から生まれてくる ? 最先端科学の荒海を風にのって渡っていく ?

    東北大学 東北大学  2007 

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  • Interface between nonmagnetic insulators may be ferromagnetic and conducting

    2007 

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  • Nanoparticle technology handbook

    2007 

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  • 薄膜の構造測定法

    大友 明

    ナノパーティクルテクノロジーハンドブック  2006.4 

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  • ZnO系LED

    大友 明

    ワイドギャップ半導体光・電子デバイス  2006.4 

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  • 21世紀を照らす光 -酸化亜鉛発光ダイオード

    大友 明, 塚崎 敦, 川崎 雅司

    2006.1 

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  • ナノパーティクルテクノロジーハンドブック

    日刊工業新聞社  2006 

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  • Nanoparticle Technology Handbook

    The Nikkan Kogyo Shinbun, Ltd  2006 

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  • ワイドギャップ半導体光・電子デバイス

    2006 

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  • チタン酸ストロンチウム

    大友 明

    物理学辞典 3訂版  2005.9 

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  • Engineered Lattice-Mismatch by Buffer Layers in Oxide Heteroepitaxy(<Special Issue>Novel Approach to Epitaxial Growth with Buffer Layers)

    Kawasaki Masashi, Terai Kota, Tsukazaki Atsushi, Ohnishi Tsuyoshi, Ohtomo Akira, Lippmaa Mikk

    The Japanese Association for Crystal Growth  2005 

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    Buffer layer is a quite useful technique for thin film growth; it can act as "glue" between substrate and film and it can relax the lattice mismatch between them. In this article, we discuss in detail the role of buffer layer to relax the lattice mismatch with taking such technologically relevant examples as ferroelectric BaTiO_3 and ultraviolet light emitting ZnO films grown on slightly lattice mismatched substrates. The interface free energy of lattice strain and relaxation by introducing dislocation is discussed from thermodynamic and kinetic view points. By taking this consideration into account, we can selectively make strained films with coherent interface and completely relaxed films. We also demonstrate a way of reducing the activation energy for introducing misfit dislocation. The use of completely relaxed films as buffer layers can mimic lattice constant tunable substrates and may open up an interesting research arena of lattice strain engineering of oxide thin films.

    DOI: 10.19009/jjacg.32.2_74

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  • 物理学辞典(3訂版)

    2005 

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  • ZnO量子井戸構造の迅速最適化

    大友 明

    コンビナトリアルテクノロジー 明日を開く“もの作り”の新世界  2004.8 

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  • Combinatorial Technology

    2004 

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  • コンビナトリアルテクノロジー -明日を開く“もの作り”の新世界

    2004 

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  • 科学のびっくり箱-ベル研究所物理部門

    大友 明

    東京化学同人  2003 

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  • Quantum structures and ultraviolet light-emitting devices based on ZnO thin films grown by laser molecular-beam epitaxy

    Akira Ohtomo

    2000.3 

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  • 酸化亜鉛紫外レーザー

    田村 謙太郎, 大友 明, 川崎 雅司

    1999.12 

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  • 酸化物で紫外線レーザーを創る

    大友 明, 川崎 雅司

    1998.3 

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  • Room temperature excitonic lasing from ZnO nanocrystalline thin films.

    KAWASAKI Masashi, OHTOMO Akira

    The Laser Society of Japan  1998.1 

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  • Epitaxial growth of alloys and superlattices based on ZnO Reviewed

    A Ohtomo, Ohkubo, I, M Kawasaki, H Koinuma, G Isoya, T Yasuda, Y Segawa

    1998 

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  • Lasing of exciton at room temperature in ZnO quantum dots thin films

    1998 

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  • ZnOナノ結晶からの室温励起子レーザー発振

    川崎 雅司, 大友 明

    アグネ技術センタ-  1998 

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  • Lasing of exciton at room temperature in ZnO quantum dots thin films

    1998 

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  • Study of SrTiO3 surface dynamics by real-time STM at high temperatures

    未来開拓研究ニュースレター  1997 

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  • ZnO excitonic laser

    1997 

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  • Study of SrTiO3 surface dynamics by real-time STM at high temperatures

    未来開拓研究ニュースレター  1997 

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  • ZnO量子構造の形成と室温レーザー発振

    未来開拓研究ニュースレター  1997 

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  • ZnOエキシトンレーザー

    第25回応物薄膜・表面セミナー  1997 

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  • ZnOの量子構造の形成と室温レーザー発振

    日本学術振興会 日本学術振興会第162委員会―第6回研究会資料  1997 

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  • 表面界面・ハイヤーオーダーエピタキシ

    電子協酸化物エレクトロニクス研究報告書II  1997 

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  • Thin film technology directed towards Josephson tunnel junction

    1996 

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  • Thin film technology directed towards Josephson tunnel junction

    1996 

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  • Room temperature luminescence and stimulated UV emission from ZnO

    1996 

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  • 新機能―光物性

    電子協酸化物エレクトロニクス研究報告書I  1996 

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  • 酸化物表面の電子構造

    電子協酸化物エレクトロニクス研究報告書I  1996 

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MISC

  • EMISSION BLUESHIFT OF ZnO/MgZnO SINGLE QUANTUM WELLS WITH N-TYPE DOPING TO BARRIER LAYERS

    T. Makino, Y. Furuta, Y. Segawa, A. Tsukazaki, A. Ohtomo, Y. Hirayama, R. Shen, S. Takeyama, Y. Takagi, M. Kawasaki

    11TH INTERNATIONAL CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS11)   210   2010

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    Web of Science

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Presentations

  • Strain-induced band-gap widening in (100) β−Ga2O3 thin films grown on θ−Al2O3 buffer layers

    Kazuki Koreishi, Takeyoshi Onuma, Takuto Soma, Akira Ohtomo

    Physical Review Materials  2025.3  American Physical Society

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  • High-Throughput Synthesis of Multinary Nitride Epitaxial Thin Films Using Combinatorial Sputtering System

    Takuto Soma, Kohei Yoshimatsu, Akira Ohtomo

    2025.3 

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  • Synthesis and Superconducting Properties of Hydridized NbN Epitaxial Thin Films

    Yushi Hiraide, Takuto Soma, Kohei Yoshimatsu, Akira Ohtomo

    2025.3 

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  • Lattice matching of (AlxScyGa1−x−y)2O3 alloy grown on β-Ga2O3 substrate

    Kazuki koreishi, Takuto Soma, Akira Ohtomo

    2025.3 

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  • Spontaneous Li Transfer in Epitaxial LiV2O4/LiTi2O4 Junction and Optical Characterizations

    Takayuki Kitamura, Takuto Soma, Kohei Yoshimatsu, Akira Ohtomo

    2025.3 

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  • Instability of Ligand Hole Magnetic Metallic State in Unusual High-Valent Perovskite Oxide Superlattices

    Takuto Soma, Yuki Honda, Kodai Niitsu, Yasuhide Mochizuki, Soungmin Bae, Kohei Yoshimatsu, Hiroshi Kumigashira, Akira Ohtomo

    2025.3 

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  • Ammonolytic Synthesis and Structural Analysis of the Layered Ternary Nitride LiWN2

    Yuki Koana, Takuto Soma, Kohei Yoshimatsu, Akira Miura, Akira Ohtomo

    2025.3 

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  • Electronic phase transition of Solid-state synthesized V2O3 films

    Yuki Kinoshita, Shunya Asaoka, Takuto Soma, Kohei Yoshimatsu, Akira Ohtomo

    2025.3 

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  • (ScxGa1−x)2O3/β-Ga2O3界面における変調ドープ構造の実現

    是石和樹, 相馬拓人, 大友明

    2024.11 

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  • 多層構造と相互拡散を利用した窒化物と水素 化物の合金化:ZrNxHy 薄膜の作製と組成制御

    宮崎大地, 吉松公平, 相馬拓人, 大友明

    2024.10 

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  • Superconductivity and quantum criticality in two-dimensional NbO2 layers

    Takuto Soma, Kohei Yoshimatsu, Akira Ohtomo

    2024.10 

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  • 交互ターゲットPLD 法により作製したZrNxHy薄膜の仕事関数評価

    宮崎 大地, 相馬 拓人, 吉松 公平, 組頭 広志, 大友 明

    2024.9 

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  • p-チャネルトランジスタに向けた非晶質Ga-O-S 薄膜の作製

    船田 貴光, 是石 和樹, 相馬 拓人, 吉松 公平, 大友 明

    2024.9 

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  • チタン酸化物薄膜Ti3O5の圧力効果

    氏原克海, 三嶽晶弘, 高橋博樹, 吉松公平, 相馬拓人, 大友明

    2024.9 

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  • Quest for p-type transparent conducting oxides

    Akira Ohtomo

    2024.9 

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  • 層状三元系窒化物MgMoN2 薄膜の固相合成

    細川 紳, 相馬 拓人, 吉松 公平, 大友 明

    2024.9 

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  • LaTiO3 エピタキシャル薄膜の輸送特性における基板と膜厚の影響

    金 榮牛, 相馬 拓人, 吉松 公平, 大友 明

    2024.9 

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  • Characterization of (100) β-(ScxGa1−x)2O3 / β-Ga2O3 heterostructures grown by pulsed-laser deposition

    Kazuki Koreishi, Takuto Soma, Hiroshi Kumigashira, Akira Ohtomo

    2024.5 

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  • (ScxGa1−x)2O3薄膜の偏光反射分光とバンド端構造の異方性

    是石 和樹, 尾沼 猛儀, 相馬 拓人, 大友 明

    2024.3 

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  • Cu(II)原料を用いたパルスレーザ堆積法によるCuFeO2薄膜の作製

    木下 裕貴, 相馬 拓人, 吉松 公平, 大友 明

    2024.3 

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  • Epitaxial Growth of Ultrawide Bandgap β-(ScxGa1–x)2O3 Films on β-Ga2O3 (100) Substrate by Pulsed-Laser Deposition

    Kazuki Koreishi, Takuto Soma, Akira Ohtomo

    2023.12 

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  • Fabrication of Zirconium Nitride Hydride Epitaxial Films by Alternating-Target Pulsed-Laser Deposition

    Daichi Miyazaki, Ziyang Cao, Takuto Soma, Akira Ohtomo

    2023.12 

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  • Strain engineering of β-Ga2O3: Pulsed-laser deposition on (100) θ-Al2O3 templates and impacts of compressive strain on physical properties

    Kazuki Koreishi, Takuto Soma, Motohisa 幹尚, Akira Ohtomo

    2023.10 

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  • β-(ScxGa1−x)2O3薄膜の電子状態およびバンドオフセット評価

    是石 和樹, 相馬 拓人, 組頭 広志, 大友 明

    2023.9 

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  • 異常高原子価ダブルペロブスカイト型LaSrFeNiO6薄膜の合成

    本田 裕貴, 相馬 拓人, 大友 明

    2023.9 

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  • ターゲット交互積層法によるZrNxHy薄膜の作製と金属-絶縁体転移

    宮崎 大地, 相馬 拓人, 大友 明

    2023.9 

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  • 歪みLaxSr1-xVO3薄膜における非Fermi液体的挙動と反強磁性Mott転移

    小川 茉白, 相馬 拓人, 大友 明

    2023.9 

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  • 二次元MoO3/三次元WO3エピタキシャル積層膜の作製とLi挿入挙動

    細川 紳, 相馬 拓人, 大友 明

    2023.9 

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  • 強磁性Fe4N/超伝導NbN接合における超伝導特性と近接効果

    吉田 悠真, 相馬 拓人, 大友 明

    2023.9 

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  • 面内圧縮歪みを有するβ-(ScxGa1−x)2O3 薄膜のエピタキシャル成長

    是石 和樹, 相馬 拓人, 大友 明

    2023.9 

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  • van der Waals酸化物2H-NbO2: ハーフフィルドMott絶縁体

    相馬 拓人, 佐藤 礼, 大友 明

    2023.9 

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  • Emergent properties of transition‐metal oxides with low valence and metastable structures

    Akira Ohtomo

    2023.6 

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  • Strongly correlated superconductivity in two-dimensional 2H-NbO2 layers

    Takuto Soma, Kohei Yoshimatsu, Akira Ohtomo

    2023.6 

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  • ミスカット基板上に作製したダブルペロブスカイト型酸化物薄膜の物性

    南野 龍樹, 相馬 拓人, 大友 明

    2023.3 

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  • β-パイロクロア型酸化物における金属-絶縁体転移とラットリング運動

    相馬 拓人, 吉松 公平, 堀場 弘司, 組頭 広志, 大友 明

    2023.3 

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  • 遷移金属水素化物の薄膜成長と電子機能開発

    大友 明

    2023.3 

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  • Li1–xNbO2薄膜のトポケミカル反応と深さ方向Li組成分析

    佐藤 礼, 相馬 拓人, 大友 明

    2022.10 

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  • 格子歪み印加によるSrVO3の電気伝導性の変調

    小川 茉白, 相馬 拓人, 大友 明

    2022.10 

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  • 二次元三角格子2H-NbO2層における強相関電子と超伝導

    相馬 拓人, 吉松 公平, 堀場 弘司, 組頭 広志, 大友 明

    2022.9 

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  • パルスレーザ体積法によるGdMnO3/LaNiO3超格子構造の作製

    山岸 祐太, サフーラムチャンドラ, 相馬 拓人, 大友 明

    2022.9 

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  • Li-content control of superconducting Li1-xNbO2 films by solution treatments

    Aya Sato, Takuto Soma, Hiroshi Kumigashira, Akira Ohtomo

    2022.9 

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  • 強磁性Fe4N/超伝導NbN 接合のエピタキシーと伝導特性

    吉田 悠真, 相馬 拓人, 大友 明

    2022.9 

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  • Tunable exchange bias effect in manganese- and nickel-based artificial perovskite superlattice structures

    Ramchandra Sahoo, Ryuki Nanno, Yuta Yamagishi, Takuto Soma, Akira Ohtomo

    2022.9 

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  • 面内圧縮歪みを有するβ-Ga2O3薄膜のエピタキシャル成長

    是石 和樹, 相馬 拓人, 加渡Kado, 大友 明

    2022.9 

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  • Impact of Au surfactant on composition and optical properties of gallium oxysulfide films.

    Zhou Weiqi, Takuto Soma, Akira Ohtomo

    2022.9 

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  • パルスレーザ堆積法による(111)配向LaHx薄膜の作製と水素量制御

    CAOZIYANG, 相馬 拓人, 大友 明

    2022.9 

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  • 分極界面を有するSrFeO3/LaNiO3ヘテロ構造の作製と伝導特性

    本田 裕貴, 相馬 拓人, 大友 明

    2022.9 

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  • AMoO2 (A = Li, Na, K): Two-dimensional Mott insulators with tunable MoO2 interlayer distance

    Zhang Shuxin, Takuto Soma, Akira Ohtomo

    2022.9 

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  • 二次元NbO2層における超伝導ドームと磁気量子臨界挙動

    相馬 拓人, 吉松 公平, 大友 明

    2022.9 

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  • Heteroepitaxial growth of molybdenum bronzes for exploring dimensionality- and composition-controlled electronic properties

    Zhang Shuxin, Takuto Soma, Akira Ohtomo

    2022.8 

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  • Modulation of properties in strongly correlated oxide films by Li-ion (de)intercalation

    Tatsuya Yajima, Shuxin Zhang, Aya Sato, Takuto Soma, Akira Ohtomo

    2022.3 

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  • IV族遷移金属水素化物および窒化物の薄膜成長と仕事関数評価

    CAOZIYANG, 林 遼一郎, 相馬 拓人, 大友 明

    2022.3 

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  • Magnetic frustration of multiple phases in LaMnO3/LaNiO3 superlattices

    Ramchandra Sahoo, 張 樹桐, 大友 明

    2022.3 

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  • Spin glass like behavior and giant exchange bias generated by B-antisite disorder in double-perovskite-type La2MnCoO6 films

    Shutong Zhang, Ramchandra Sahoo, Takuto Soma, Akira Ohtomo

    2022.3 

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  • エピタキシャル歪みによるSrVO3薄膜のバンド幅制御と有効質量の発散

    小川 茉白, 相馬 拓人, 大友 明

    2022.3 

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  • Electrical Conductivity of LiNiO2 Films with Two-dimensional NiO2 Layers

    Tatsuya Yajima, Takuto Soma, Akira Ohtomo

    2021.12 

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  • Work-function control of metallic IV compounds by anion engineering

    Ziyang Cao, Ryoichiro Hayashi, Takuto Soma, Akira Ohtomo

    2021.12 

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  • Epitaxial Growth of p-Type SnO Films and Soft Chemical Sulfurization

    Suguri Uchida, Takuto Soma, Akira Ohtomo

    2021.12 

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  • Anisotropic pressure effect on superconducting and bipolaronic insulator to metal transition in Ti4O7 epitaxial film

    Yuto Kikuchi, Chizuru kawashima, Kouhei Ishida, Hayato Kamika, Hiroki Takahashi, Kohei Yoshimatsu, Takuto Soma, Akira Ohtomo

    2021.11 

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  • High-pressure study of superconductivity and bipolaronic insulator to metal transition in Ti4O7 film

    菊池 佑斗, 川幡 武, Chizuru kawashima, 石田 康平, Hayato Kamika, Hiroki Takahashi, Kohei Yoshimatsu, Takuto Soma, Akira Ohtomo

    2021.10 

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  • 異常原子価を有する層状ニッケル酸リチウム薄膜のエピタキシャル成長と電気伝導性

    矢島 達也, 相馬 拓人, 大友 明

    2021.10 

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  • Layer-by-layer growth of (111)-oriented LaMnO3 and LaNiO3 films

    Ramchandra Sahoo, S. Zhang, Y. Takeuchi, A. Ohtomo

    2021.9 

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  • Effects of epitaxial strain on the electronic states of perovskite-type vanadates: analyses based on Fermi liquid theory and band calculation

    Takuto Soma, Hirokazu Okabe, Akira Ohtomo

    2021.9 

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  • Examination of thin-film synthesis of layered NbO2 with topochemical reactions

    Aya Sato, Takuto Soma, Akira Ohtomo

    2021.9 

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  • Fabrication of p-type transparent SnO films and examination of sulfurization process

    Suguri Uchida, Takuto Soma, Akira Ohtomo

    2021.9 

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  • Control of B-antisite disorder and observation of exchange bias in double-perovskite-type La2MnCoO6 films

    Shutong Zhang, Ramchandra Sahoo, Takuto Soma, Miho Kitamura, Koji Horiba, Hiroshi Kumigashira, Osami Sakata, Akira Ohtomo

    2021.9 

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  • Li-ion intercalation to LiV2O4 epitaxial films and in-situ structural analysis

    Tatsuya Yajima, Takuto Soma, Akira Ohtomo

    2021.9 

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  • A p-type transparent conducting oxide with 2D superconductivity

    Takuto Soma, Akira Ohtomo

    2021.4 

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  • Investigation of impact of orientation on electronic properties in epitaxially grown MoO2 films

    Shuxin Zhang, Takuto Soma, Akira Ohtomo

    2021.3 

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  • Epitaxial growth of layered-rock-salt type LiNiO2

    Tatsuya Yajima, Takuto Soma, Akira Ohtomo

    2021.3 

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  • スピネル・層状岩塩型構造バナジウム酸リチウムのエピタキシャル成長と電気化学的イオン脱挿入

    矢島 達也, 相馬 拓人, 大友 明

    2020.12 

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  • Study of model dielectroc function of LiNbO2

    Tsukasa Kurachi, 山口 拓真, Takuto Soma, Akira Ohtomo, Takayuki Makino

    2020.11 

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  • 電気化学反応を用いたフィリング制御による「電子の重さ」の変調

    矢島 達也, 相馬 拓人, 大友 明

    2020.10 

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  • 巨大交換バイアスの実現に向けたLa2MnCoO6 薄膜のBサイト秩序度制御による磁気特性の変調

    張 樹桐, 武内 優, 相馬 拓人, 大友 明

    2020.10 

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  • パルスレーザ堆積法によるHfH2+x薄膜の直接合成

    林 遼一郎, 大友 明

    2020.9 

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  • ペロブスカイト型La2FeCoO6人工超格子薄膜の作製

    武内 優, 坂田 修身, 大友 明

    2020.9 

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  • 透明Li1−xNbO2薄膜におけるシングルバンド二次元ホール超伝導

    相馬 拓人, 吉松 公平, 堀場 弘司, 組頭 広志, 大友 明

    2020.9 

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  • 熱硝酸によるβ-Ga2O3 (010)表面のSi不純物除去

    亀井 海聖, 斉藤 拓海, 加渡Kado, 大友 明

    2020.9 

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  • 窒素ドープ酸化ガリウム薄膜の成長とバンド構造評価

    斉藤 拓海, 加渡Kado, 大友 明

    2020.9 

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  • パルスレーザ堆積法で成長したCrN薄膜の電子物性 Ⅱ

    横山 竜, 大友 明

    2020.9 

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  • 金属酸化物人工超格子を前駆体に用いた規則合金薄膜への転換法の検討

    野口 裕太郎, 相馬 拓人, 吉松 公平, 坂田 修身, 大友 明

    2020.3 

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  • パルスレーザ堆積法による ScN 薄膜のエピタキシャル成長

    佐藤 大知, 横山 竜, 相馬 拓人, 大友 明

    2020.3 

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  • GaS 原料を用いた Ga2O3系混晶の PLD 成長

    青山 航平, 斉藤 拓海, 亀井 海聖, 高橋 瑞人, 相馬 拓人, 加渡Kado, 大友 明

    2020.3 

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  • 巨大交換バイアスの実現に向けたLa2MnCoO6の非平衡薄膜成長と磁気特性の制御

    張 樹桐, 武内 優, 相馬 拓人, 大友 明

    2020.3 

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  • 遷移金属水素化物・窒化物の薄膜成長と物性評価

    大友 明

    2020.3 

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  • Ti4O7薄膜の酸化状態と超伝導の関係

    小林 知央, 相馬 拓人, 吉松 公平, 大友 明

    2020.3 

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  • LiNbO2 as a p-type transparent superconducting oxide

    Akira ohtomo

    2020.2 

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  • Epitaxial Stabilization and Electrochemical Doping Make Metastable Titanates New Superconducting Materials

    Kohei Yoshimatsu, Akira Ohtomo

    2019.12 

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  • Transparency and Two-dimensional Hole Superconductivity in Li1−xNbO2

    Takuto Soma, Kohei Yoshimatsu, Akira Ohtomo

    2019.12 

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  • Epitaxial thin film growth by PLD methods: Selective synthesis of layered-rock-salt-type LiVO2 and spinel-type LiV2O4

    Tatsuya Yajima, Takuto Soma, Akira Ohtomo

    2019.10 

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  • Superconductivity in higher titanates of γ-Ti3O5 and Ti4O7 films

    Kohei Yoshimatsu, Osami Sakata, Akira Ohtomo

    2019.9 

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  • Two-dimensional hole superconductivity in transparent Li1−xNbO2 epitaxial films

    Takuto Soma, Kohei Yoshimatsu, Akira Ohtomo

    2019.9 

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  • Epitaxial stabilization of metastable β-MoO3 films for reversible Li-ion intercalation

    Shuxin Zhang, Takuto Soma, Tatsuya Yajima, Akira Ohtomo

    2019.9 

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  • Electrochemical doping to early-transition-metal oxide superconductors

    Takuto Soma, Tatsuya Yajima, Shuxin Zhang, Akira Ohtomo

    2019.9 

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  • Highly reversible Li-ion (de)intercalation to metastable β-MoO3

    Shuxin Zhang, Takuto Soma, Tatsuya Yajima, Akira Ohtomo

    2019.9 

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  • Selective growth of layered rock-salt-type LiVO2 and spinel-type LiV2O4 films by PLD

    Tatsuya Yajima, Takuto Soma, Akira Ohtomo

    2019.9 

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  • High Concentration N-Doping into Ga2O3 Films by Using Pulsed-Laser Deposition with NO Plasma

    J. S. Lee, R. Wakabayashi, T. Saito, K. Yoshimatsu, M. Kado, A. Ohtomo

    2019 Compound Semiconductor Week, CSW 2019 - Proceedings  2019.5  Institute of Electrical and Electronics Engineers Inc.

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  • Suppression of Parallel Conduction at the Interface in β-Ga2O3 Homoepitaxial Layer Using Semi-Insulating Intermediate Layer

    Takumi Saito, Ryo Wakabayashi, Jung-Soo Lee, Kaisei Kamei, Kohei Yoshimatsu, Motohisa Kado, Akira Ohtomo

    2019.5 

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  • パルスレーザ堆積法で成長したCrN薄膜の電子物性

    横山 竜, 水城 淳, 大友 明

    2019.3 

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  • 層状LiNbO2におけるp型透明超伝導:NbO6三角柱が創る新規電子状態

    相馬 拓人, 吉松 公平, 堀場 弘司, 組頭 広志, 大友 明

    2019.3 

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  • 層状p型半導体LiRhO2の薄膜成長と電気伝導性制御

    相馬 拓人, 吉松 公平, 大友 明

    2019.3 

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  • パルスレーザ堆積法を用いたZrH2薄膜の作製:水素不定比の制御

    西 暁登, 吉松 公平, 大友 明

    2019.3 

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  • 半絶縁性中間層によるβ-Ga2O3ホモエピタキシャル層の界面伝導の抑制

    斉藤 拓海, 若林 諒, 李 政洙, 亀井 海聖, 吉松 公平, 加渡Kado, 大友 明

    2019.3 

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  • Emergent electronic states in metal-oxide heterostructures

    Akira Ohtomo

    2019.3 

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  • PLD法による窒素ドープ酸化ガリウム薄膜の成長と電気特性評価

    李 政洙, 若林 諒, 斉藤 拓海, 吉松 公平, 加渡Kado, 大友 明

    2019.3 

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  • High pressure study for superconductivity in Ti4O7 films

    Sekiguch Shuhei, Takuya Shiraishi, Kyota Miura, Chizuru kawashima, Kohei Yoshimatsu, Akira Ohtomo, Hayato Kamika, Hiroki Takahashi

    Journal of the Physics Society of Japan  2019.2  The Physical Society of Japan

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    Measurements of electrical resistance at high pressure were performed up to 2.5 GPa for the insulating and the superconducting epitaxial Ti4O7 films of Magnéli phase. For the insulating film, the metal-insulator transition temperature increased significantly from ∼150 to 180 K at a pressure of 2 GPa. For the superconducting film, Tc decreased at a rate of 0.7 K/GPa. It is believed that the electron–phonon interaction is sensitive to strains under pressure and plays an important role.

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  • Electrochemical Li-ion intercalation for control of electronic phases in transition-metal oxide epitaxial films

    Takuto Soma, Kohei Yoshimatsu, Akira Ohtomo

    2018.11 

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  • Electrochemical reaction induced conductivity modulation in a heavy fermion system of spinel-type LiV2O4 thin film

    Tatsuya Yajima, Takuto Soma, Kohei Yoshimatsu, Akira Ohtomo

    2018.10 

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  • Electrochemical Reaction Induced Superconducting Transitions in Metal Oxide Films

    Akira Ohtomo, Takuto Soma, Kohei Yoshimatsu

    2018.10 

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  • Low-temperature topotactic synthesis of Ni thin films using CaH2 reduction

    Yutaro Noguchi, Kohei Yoshimatsu, Akira Ohtomo

    2018.9 

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  • Control of electric properties for Ti4O7 films: impact of film thickness

    Fumiya Kobayashi, Kohei Yoshimatsu, Akira Ohtomo

    2018.9 

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  • Epitaxial growth and bandgap engineering of β-(Ga1-yScy)2O3by PLD

    Ryo Wakabayashi, Kohei Yoshimatsu, Akira Ohtomo

    2018.9 

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  • Epitaxial growth and electrochemical Li intercalation of heavy fermion spinel LiV2O4

    Tatsuya Yajima, Takuto Soma, Kohei Yoshimatsu, Akira Ohtomo

    2018.9 

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  • Synthesis of layered LiNbO2 thin films and control of their superconducting properties by using Li charging/discharging reactions

    Takuto Soma, Kohei Yoshimatsu, Akira Ohtomo

    2018.9 

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  • Thin-film synthesis of functional inorganic materials for energy and environmental issues

    A. Ohtomo

    2018.5 

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  • Removal of Si surface impurities from β-Ga2O3( substrate by using wet etching

    Jung-Soo Lee, Ryo Wakabayashi, K. Yoshimatsu, A. Ohtomo

    2018.3 

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  • Fabrication of ZrH2 thin films using hydrogen-radical assisted pulsed-laser deposition

    Akito Nishi, K. Yoshimatsu, A. Ohtomo

    2018.3 

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  • β-Ga203(100)上に成長したβ-(AlxGal-x)203薄膜のバンドギャップ評価

    服部真依, 若林諒, 佐々木公平, 増井建和, 倉又朗人, 山腰茂伸, 堀場弘司, 組頭広志, 吉松公平, 大友明

    2018.3 

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  • Epitaxial growth and magnetic transport properties of β-pyrochlore-type CsW2O6 single crystal films

    Takuto Soma, Kohei Yoshimatsu, Koji Horiba, Hiroshi Kumigashira, Akira Ohtomo

    2018.3 

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  • Measurement of electrical resistance of Ti4O7 and Ti3O5 under high pressure

    Sekiguch Shuhei, Chizuru kawashima, Hayato Kamika, Hiroki Takahashi, K. Yoshimatsu, A.Ohtomo

    2018.3 

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  • Electrochemically active metal-oxide devices

    A. Ohtomo, Hisanori Mashiko, Mifuyu Niwa, Hikaru Kurokawa, Kohei Yoshimatsu

    2018.3 

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  • Ultrafast spin dynamics of double-perovskite oxide thin films observed by time-resolved x-ray magnetic circular dichroism measurement

    Y. Hirata, Kohei Yamamoto, Sh. Yamamoto, N. Pontius, C. Schussler-Langeheine, K. Yoshimatsu, I. Ohkubo, M. Kitamura, M. Oshima, A. Ohtomo, I. Matsuda, H. Wadati

    2018.3 

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  • Impact of hole-doping on metal-insulator transition in β-pyrochlore-type CsW2O6

    Takuto Soma, Kohei Yoshimatsu, Koji Horiba, Hiroshi Kumigashira, Akira Ohtomo

    2018.3 

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  • Field-effect carrier doping to pseudo-two-dimentional SrTiO3 ultrathin films

    Takashi Tojo, K. Yoshimatsu, A. Ohtomo

    2018.3 

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  • β-(Ga1-yScy)2O3as a novel wide band-gap semiconductor alloy

    Ryo Wakabayashi, K. Yoshimatsu, A. Ohtomo

    2018.3 

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  • 水素ラジカル支援パルスレーザ堆積法を用いたTiH2薄膜の作製

    西暁登, 吉松公平, 大友明

    2018.3 

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  • 電気化学的インターカレーションによるタングステン酸化物の可逆的電子相制御

    相馬 拓人, 吉松 公平, 大友 明

    2017.10 

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  • チタン酸窒化物の薄膜合成と可視光応答型半導体光電極作製に向けた光学特性評価

    水城 淳, 吉松 公平, 大友 明

    2017.10 

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  • Growth of β-Ga2O3 -based heterostructures by pulsed-laser deposition

    R. Wakabayashi, M. Hattori, K. Yoshimatsu, Koji Horiba, Hiroshi Kumigashira, A. Ohtomo

    2017.9 

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  • The complete solid-solution β-(Alx Ga1-x )2O3 realized by the epitaxial growth

    Ryo Wakabayashi, Mai Hattori, K. Yoshimatsu, A. Ohtomo

    2017.9 

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  • Growth of titanium oxynitride films by using pulsed-laser deposition

    Jun Mizushiro, Tadahiko Inoue, K. Yoshimatsu, Naoki Ohashi, A. Ohtomo

    2017.9 

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  • EDLT performance of SrTiO3/LaTiOx artificial superlattice structures

    Takashi Tojo, K. Yoshimatsu, A. Ohtomo

    2017.9 

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  • Metal-insulator transition and electronic structures of β-pyrochlore-type CsW2O6

    Takuto Soma, K. Yoshimatsu, Koji Horiba, Hiroshi Kumigashira, A. Ohtomo

    2017.9 

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  • Growth and physical properties of La2VFeO6 double-perovskite films

    Junya Ishimaru, K. Yoshimatsu, Koji Horiba, Hiroshi Kumigashira, A. Ohtomo

    2017.9 

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  • Eletrochemical modulation of electronic states for tungsten oxides epitaxial films

    Takuto Soma, K. Yoshimatsu, A. Ohtomo

    2017.8 

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  • Graphoepitaxy of In2O3 by quasi-VLS growth

    A. Ohtomo

    2017.8 

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  • Epitaxial growth of low valence transition – Metal oxides exhibiting novel electronic states

    A. Ohtomo

    2017.8 

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  • Epitaxial growth and physical properties of La2CrMnO6 double-perovskite films

    Junya Ishimaru, K. Yoshimatsu, Koji Horiba, Hiroshi Kumigashira, A. Ohtomo

    2017.8 

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  • Superconductivity in higher titanium oxides

    K. Yoshimatsu, O.Sakata, A.ohtomo

    2017.7 

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  • V溝パターン基板上の擬VSL法によるIn203グラフォエピタキシャル成長

    呉東広平, 吉松公平, 大友明

    2017.3 

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  • 特異な電気伝導性を発現する前周期遷移金属酸化物の薄膜合成戦略

    大友明

    2017.3 

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  • Epitaxial growth and physical properties of β-pyrochlore-type CsW2O6 films

    Takuto Soma, K. Yoshimatsu, A. Ohtomo

    2017.3 

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  • Impact of epitaxial strain for electrical properties of perovskite vanadates

    Hirokazu Okabe, K. Yoshimatsu, A. Ohtomo

    2017.3 

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  • MgO(100)基板上のβ-Ga203:Si(100)薄膜の低温成長

    若林諒, 吉松公平, 大友明

    2017.3 

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  • Heteroepitaxy of functional materials for environmental and energy applications

    A. Ohtomo

    2017.2 

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  • β-Ga2O3用ITOオーミック電極

    大島孝仁, 若林諒, 服部真依, 橋口 明広, 河野 直士, 佐々木 公平, 増井 建和, 倉又 朗人, 山腰 茂伸, 吉松 公平, 大友 明

    2016.9 

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  • Graphoepitaxial growth of In2O3 by quasi-VLS method

    Tokohei Go, K. Yoshimatsu, A. Ohtomo

    2016.9 

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  • Low-temperature growth of β-Ga2O3:Si (100) films on MgO (100) substrates

    R. Wakabayashi, K. Yoshimatsu, A. Ohtomo

    2016.9 

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  • Growth and physical properties of La2CrMnO6 double-perovskite films

    Junya Ishimaru, K. Yoshimatsu, Koji Horiba, Hiroshi Kumigashira, A. Ohtomo

    2016.9 

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  • DUV CL properties of cubic MgxZn1−xO alloy films and superlattice structures

    Hideyuki Imabeppu, Takayoshi OSHIMA, Mai Hattori, Michihito Nakatani, Toshihisa Suyama, K. Yoshimatsu, A. Ohtomo

    2016.9 

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  • ITO ohmic contacts for β-Ga2O3

    T. Oshima, R. Wakabayashi, M. Hattori, Akihiro Hashiguchi, Naoto Kawano, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, K. Yoshimatsu, A. Ohtomo, Toshiyuki Oishi, Makoto Kasu

    2016.9 

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  • Control of superconducting properties of CsxWO3 films by electrochemical ion intercalation

    Takuto Soma, K. Yoshimatsu, A. Ohtomo

    2016.8 

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  • Graphoepitaxy of In2O3 microcrystals by quasi-VLS method

    Tokohei Go, K. Yoshimatsu, A. Ohtomo

    2016.8 

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  • Tuning The Electronic Properties of Oxide-Semiconductor Heterostructures

    A. Ohtomo

    2016.6 

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  • Growth of high-quality γ-Ti3O5 films and their superconducting properties

    K. Yoshimatsu, O. Sakata, A. Ohtomo

    2016.3 

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  • Fabrication of CsxWO3 epitaxial films and modulation of their superconducting properties

    Takuto Soma, K. Yoshimatsu, A. Ohtomo

    2016.3 

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  • Superconductivity of TiO, Ti2O3 films and γ-Ti3O5 mixed-phase films

    H. Kurokawa, K. Yoshimatsu, A. Ohtomo

    2016.3 

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  • Enhancement of Hall mobility in ZnO graphoepitaxial films

    Tetsuya Kudoh, Takayoshi OSHIMA, K. Yoshimatsu, A. Ohtomo

    2016.3 

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  • High-energy-resolution x-ray emission spectroscopy study of epitaxial strain effects on spin states in LaCoO3 thin films

    Yokoyama Y., Hirata Y., Yamamoto K., Takubo K., Miyawaki J., Harada Y., Asakura D., Ikenaga E., Yamasaki Y., Fujioka J., Nakamura M., Shiraki S., Hitosugi T., Yoshimatsu K., Ohtomo A., Chikamatsu A., Hasegawa T., Taguchi M., Tanaka A., Kawasaki M., Tokura Y., Wadati H.

    Meeting Abstracts of the Physical Society of Japan  2016  The Physical Society of Japan

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  • 19pBP-8 Time-Resolved X-ray Magnetic Circular Dichroism of Double-Perovskite Oxide Thin Films

    Hirata Y., Yamamoto K., Yamamoto Sh., Pontius N., Schussler-Langeheine C., Yoshimatsu K., Ohkubo I., Kitamura M., Oshima M., Ohtomo A., Matsuda I., Wadati H.

    Meeting Abstracts of the Physical Society of Japan  2016  The Physical Society of Japan (JPS)

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  • Measuring superconductivity in a battery -superconductor to-insulator transitions induced by electrochemical reaction-

    A. Ohtomo

    2015.12 

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  • Evaluation of Band Offset at β-(AlxGa1-x)2O3/β-Ga2O3 Heterointerface

    M. Hattori, R. Wakabayashi, T. Oshima, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, K. Yoshimatsu, A. Ohtomo

    2015.11 

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  • Epitaxial Relationship and Capacitance-Voltage Characteristicsof γ-Al2O3 Films Grown on (010) β-Ga2O3 Substrates

    M. Hattori, T. Oshima, R. Wakabayashi, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, K. Yoshimatsu, A. Ohtomo

    2015.11 

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  • Growth and Electric Properties of Conductive β-(AlxGa1-x)2O3 Films

    R. Wakabayashi, T. Oshima, M. Hattori, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, K. Yoshimatsu, A. Ohtomo

    2015.11 

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  • Microwave effects on deposition of Co-Pi co-catalyst particles for enghancig photocatalytic activity

    Takuya Yamada, Masato Maitani, Hisanori Mashiko, Kohei Yoshimatsu, Takayoshi OSHIMA, Akira Ohtomo, Shuntaro Tsubaki, EIICHI SUZUKI, Yuji Wada

    2015.11 

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  • N-type doping of γ-Ga2O3 epitaxial film

    Takayoshi Oshima, Keitarou Matsuyama, Kohei Yoshimatsu, Akira Ohtomo

    2015.11 

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  • Strong Fermi-Level Pinning at Metal/β-Ga2O3 (̅201) Interface

    R. Wakabayashi, T. Oshima, M. Hattori, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, K. Yoshimatsu, A. Ohtomo

    2015.11 

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  • Metallization of WO3 epitaxial films using Li-ion electrochemical intercalation

    Takuto Soma, K. Yoshimatsu, T. Oshima, A. Ohtomo

    2015.10 

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  • 界面終端面を制御した金属酸化物ヘテロ接合の可視光水分解特性

    中村 研太郎, 増子尚徳, 吉松公平, 大島孝仁, 大友 明

    2015.10 

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  • Superconductivity of Magnéli phase Ti oxide films

    K. Yoshimatsu, O. Sakata, A. Ohtomo

    2015.9 

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  • Fabrication of surface-relief gratings with nanometer-scale periodicity towards growth of fully oriented films on glass

    K. Ohashi, T. Kudoh, T. Oshima, K. Yoshimatsu, A. Ohtomo

    2015.9 

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  • Electric properties of ZnO graphoepitaxial films

    T. Kudoh, T. Oshima, K. Ohashi, K. Yoshimatsu, A. Ohtomo

    2015.9 

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  • Epitaxial structure and capacitance-voltage characteristics of γ-Al2O3 films grown on β-Ga2O3 (010) substrate

    M. Hattori, T. Oshima, R. Wakabayashi, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, K. Yoshimatsu, A. Ohtomo

    2015.9 

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  • Effect of lattice strain for metal-to-insulator transitions in perovskite titanates

    H. Okabe, K. Yoshimatsu, T. Oshima, A. Ohtomo

    2015.9 

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  • Epitaxial growth of Ti2O3 films and their anisotropy conductivity

    H. Kurokawa, K. Yoshimatsu, T. Oshima, A. Ohtomo

    2015.9 

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  • Growth control of CoPi co-catalysts on Fe2O3 by microwave interfacial heating

    Masato Maitani, Takuya Yamada, Hisanori Mashiko, Kohei Yoshimatsu, Takayoshi OSHIMA, Shuntaro Tsubaki, EIICHI SUZUKI, A. Ohtomo, Yuji Wada

    2015.9 

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  • Strong Fermi-level pinning at metal/β-Ga2O3 (̅201) interfaces

    R. Wakabayashi, T. Oshima, M. Hattori, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, K. Yoshimatsu, A. Ohtomo

    2015.9 

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  • Superconductivity of γ-Ti3O5 films

    K. Yoshimatsu, O. Sakata, A. Ohtomo

    2015.9 

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  • Type-I band alignment at β-(AlxGa1-x)2O3/β-Ga2O3 heterojunctions

    T. Oshima, M. Hattori, R. Wakabayashi, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, K. Horiba, H. Kumigashira, K. Yoshimatsu, A. Ohtomo

    2015.7 

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  • Oxygen-radical-assisted pulsed-laser deposition of β-Ga2O3-based films

    R. Wakabayashi, T. Oshima, M. Hattori, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, K. Yoshimatsu, A. Ohtomo

    2015.7 

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  • ナノパターンガラス基板上の配向膜成長

    大友 明

    2015.6 

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  • CaxSm1-xTiO3エピタキシャル薄膜の作製と電気特性評価

    岡部宏和, 吉松 公平, 大島 孝仁, 大友 明

    2015.3 

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  • ダブルペロブスカイト型Sr2CoRuO6の薄膜成長と物性

    渡会 啓介, 吉松 公平, 大島 孝仁, 大友 明

    2015.3 

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  • 配向を制御したα-Fe2O3薄膜のインピーダンス測定評価

    増子 尚徳, 吉松 公平, 大島 孝仁, 大友 明

    2015.3 

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  • β-(AlxGa1-x)2O3/β-Ga2O3/ヘテロ接合のバンドオフセット評価

    服部 真依, 若林 諒, 大島 孝仁, 佐々木 公平, 増井 建和, 倉又 朗人, 山腰 茂伸, 堀場 弘司, 組頭 広志, 吉松 公平, 大友 明

    2015.3 

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  • 電気化学的Li挿入によるWO3エピタキシャル薄膜の金属化

    相馬 拓人, 吉松 公平, 丹羽 三冬, 大島 孝仁, 大友 明

    2015.3 

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  • 酸素ラジカル支援PLD法による酸化ガリウム系混晶薄膜の成長

    若林 諒, 服部 真依, 大島 孝仁, 佐々木 公平, 増井 建和, 倉又 朗人, 山腰 茂伸, 吉松 公平, 大友 明

    2015.3 

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  • ダブルペロブスカイト型Sr2CoRuO6の薄膜合成と物性

    渡会 啓介, 吉松 公平, 大島 孝仁, 大友 明

    2015 

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  • Fabrication and Characterization of Semiconductor-Photoelectrodes Based on Earth-Abundant Fe2O3 with Various Crystalline Orientations

    H. Mashiko, K. Yoshimatsu, T. Oshima, A. Ohtomo

    2014.12 

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    α-Fe2O3 is known as a visible-light-driven photoelectrode. We report the orientation dependence of semiconductor-photoelectrode characteristics using epitaxial α-Fe2O3 thin films.

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  • Graphoepitaxy of ZnO: novel selection rule of domain formation on nanopatterned glass surface

    A. Ohtomo, M. Irino, K. Ohashi, T. Oshima

    2014.12 

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    ZnO and related materials have excellent optical and electronic properties, and recent advancements in epitaxial growth technique have spurred the investigation of these materials for applications
    such as ultraviolet light-emitting diodes and invisible transistors. Although reliable technique for p-type doping
    into ZnO is not yet completed, the crystalline quality and materials purity is now approaching ultimate limits−
    the fractional quantum Hall effect has been observed in ultraclean ZnO/MgZnO interfaces. The majority of the
    applications presently envisaged can essentially be realized if single-crystalline layers glow on low-cost glass
    and polymer substrates in a fashion of graphoepitaxy. The notion of graphoepitaxy has been applied for many classes of materials, including semiconductors, metals, molecular compounds, and alkali halides. A rational mechanism of crystal orientations is induced by the fact that nucleation occurs under geometric constraint in a grating lithographically fabricated on the glass surface. Here we study this for the ionic oxide semiconductor, hexagonal ZnO on a quartz substrate with a square-wave relief grating structure. The epitaxial structure was obtained by two-step growth; pulsed-laser deposition (PLD) of a c-axis oriented, homogeneous nucleation
    layer, followed by mist chemical vapor deposition (Mist CVD) of an in-plane oriented, a few microns domains (a
    few microns). Surprisingly, rotational symmetry of the domains was found to be twisted by 90º from right angles commonly found in graphoepitaxy (i.e., crystal facet m-planes parallel to the side walls). We investigated surface morphology for the growth-interrupted films to identify that the m-plane facets indeed
    appeared perpendicular to side walls. The details of novel selection rule of the domain formation and the electronic properties of the obtained films will be presented.

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  • 伝導性γ相酸化ガリウム薄膜の作製

    松山 慶太朗, 大島 孝仁, 吉松 公平, 大友 明

    2014.9 

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  • 高機能薄膜のグラフォエピタキシーに向けたガラス基板のナノパターニング

    大橋 一輝, 入野 将昂, 大島 孝仁, 吉松 公平, 大友 明

    2014.9 

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  • Synthesis and spectroscopic study on double-perovskite oxide thin films

    K. Yoshimatsu, K. Nogami, K. Watarai, H. Mashiko, E. Sakai, H. Kumigashira, O. Sakata, T. Oshima, A. Ohtomo

    2014.9 

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  • 配向を制御したα-Fe2O3薄膜の半導体光電極特性

    増子 尚徳, 吉松 公平, 大島 孝仁, 大友 明

    2014.9 

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  • TiOx薄膜の合成と物性

    吉松 公平, 大島 孝仁, 大友 明

    2014.9 

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  • LaFeO3/SrTiO3ヘテロ構造の半導体光電極特性

    中村 研太郎, 増子 尚徳, 吉松 公平, 大島 孝仁, 大友 明

    2014.9 

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  • LaGaO3エピタキシャル薄膜の成長と深紫外カソードルミネッセンス特性評価

    向井 章, 大島 孝仁, 吉松 公平, 藤井 俊輔, 須山 敏尚, 大友 明

    2014.9 

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  • Li脱挿入によるLiTi2O4超伝導-絶縁状態間の可逆的スイッチング

    丹羽 三冬, 吉松 公平, 大島 孝仁, 大友 明

    2014.9 

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  • ダブルペロブスカイト型La2TiFeO6の薄膜成長と物性

    渡会 啓介, 吉松 公平, 大島 孝仁, 大友 明

    2014.9 

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  • Layer-by-layer growth of titanium hydride on metal-oxide substrates International conference

    T. Suzuki, K. Yoshimatsu, N. Tsuchimine, T. Oshima, K. Horiba, H. Kumigashira, A. Ohtomo

    The Eighth International Conference on the Science and Technology for Advanced Ceramics  2014.6 

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    Venue:Yokohama  

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  • Epitaxial growth of ZnGa2O4 films by mist chemical vapor deposition International conference

    M. Niwa, A. Mukai, T. Oshima, T. Nagami, T. Suyama, A. Ohtomo

    The Eighth International Conference on the Science and Technology for Advanced Ceramics  2014.6 

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    Venue:Yokohama  

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  • Epitaxial structure of ZnO on patterned glass substrates International conference

    K. Ohashi, M. Irino, T. Oshima, A. Ohtomo

    The Eighth International Conference on the Science and Technology for Advanced Ceramics  2014.6 

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    Venue:Yokohama  

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  • パルスレーザ堆積法を用いたTiH2薄膜の作製

    鈴木 崇之, 土嶺 信男, 大島 孝仁, 吉松 公平, 大友 明

    2014.3 

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    TiH2は水素吸蔵合金として研究されてきたが、単結晶合成や物性に関する知見がほとんどない。PLDを用いてアルゴン雰囲気中比較的低温でTiH2焼結体からエピタキシャル薄膜を得ることに成功した。RHEED強度振動が観測され、室温から極低温まで金属伝導を示すことが分かった。

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  • ダブルペロブスカイト型La2MnFeO6の薄膜成長と磁化特性

    野上 顕悟, 吉松 公平, 渡会 啓介, 大島 孝仁, 大友 明

    2014.3 

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    La2MnFeO6はバルクでは無秩序な固溶体であり,ダブルペロブスカイト秩序相の磁性は明らかにされていない.我々は,秩序相を有するLa2MnFeO6の薄膜合成に成功し,その磁気的基底状態がフェリ磁性であることを明らかにしたので報告する.

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  • 酸化物表面・界面の実態に迫るナノテクノロジー

    大友明

    2014.3 

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    近年、酸化物表面・界面の真の姿を先端ナノ計測技術によってみようという意識が高まっており、酸化物半導体を中心にいくつかの研究例をレビューする。

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  • ZnOグラフォエピタキシャル薄膜の成長機構

    入野 将昂, 大島 孝仁, 大友 明

    2014.3 

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    ガラス基板表面微細パターニングにより面内配向を示す機能性酸化物薄膜を得ることは、デバイス製造コスト低減のために非常に有用である。我々は,ガラス基板パターン上で面内配向を示すZnO薄膜を合成し,その配向機構に関する知見を得ることに成功したので報告する。

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  • Epitaxial growth and interface properties of oxide heterostructures for renewable energy devices

    A. Ohtomo

    2014.3 

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  • Enhanced visible-light water photolysis in iron oxide-based epitaxial photoanodes with staggered band alignment

    H. Mashiko, T. Oshima, A. Ohtomo

    2014.2 

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  • Doping control in device-grade β-Ga2O3 homoepitaxial films grown by pulsed-laser deposition

    A. Mukai, T. Oshima, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, A. Ohtomo

    2013.12 

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  • 酸化物半導体材料・デバイスの基礎と最新動向~酸化物半導体・透明導電膜・デバイス応用を詳解~

    大友 明

    2013.12 

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  • A systematic study of (CrxFe1-x)2O3 solid-solution photoelectrodes for visible-light-driven water splitting

    H. Mashiko, T. Oshima, K. Yoshimatsu, E. Sakai, H. Kumigashira, J. T. Song, T. Iwasaki, M. Hatano, A. Ohtomo

    2013.12 

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  • Tuning of band structures and photoelectrode properties of transition-metal oxides

    A. Ohtomo

    2013.11 

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  • ワイドギャップガリウム系酸化物薄膜のエピタキシャル成長と物性

    大島 孝仁, 中園 敦巳, 丹羽 三冬, 向井 章, 大友 明

    2013.10 

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  • PLD法による(201)面β-Ga2O3ホモエピタキシャル成長の温度依存性

    向井 章, 大島 孝仁, 佐々木 公平, 増井 建和, 倉又 朗人, 山腰 茂伸, 大友 明

    2013.9 

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  • β-Ga2O3単結晶光電極の特性評価

    大島 孝仁, 神永 健一, 増子 尚徳, 向井 章, 佐々木 公平, 増井 建和, 倉又 朗人, 山腰 茂伸, 大友 明

    2013.9 

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  • ミストCVD法によるZnGa2O4薄膜のエピタキシャル成長

    丹羽 三冬, 向井 章, 大島 孝仁, 長見 知史, 須山 敏尚, 大友 明

    2013.9 

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  • ZnOのグラフォエピタキシーに向けたガラス基板表面の加工と初期成長観察

    入野 将昂, 大島 孝仁, 大友 明

    2013.9 

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  • β-Al2XGa2-2XO3 thin films for β-Ga2O3 hetero-device applications

    T. Oshima, A. Mukai, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, A. Ohtomo

    2013.9 

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  • Nano-scale patterning of glass surface with block copolymer self-assembly

    T. Kudoh, T. Oshima, A. Ohtomo

    2013.8 

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  • 酸化物半導体結晶のエピタキシャル成長とその界面物性

    大友 明

    ワイドギャップ半導体光・電子デバイス第162委員会第85回研究会資料集  2013.7  独立行政法人 日本学術振興会

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  • Semi-insulation behavior in conducting β-Ga2O3 single crytal surfaces by thermal oxidation

    T. Oshima, K. Kaminaga, A. Mukai, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, S. Fujita, A. Ohtomo

    2013.7 

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  • 遷移金属酸化物の電子構造制御による光エネルギー変換材料への展開

    大島 孝仁, 増子 尚徳, 野上 顕悟, 吉松 公平, 坂井 延寿, 組頭 広志, 坂田 修身, 大友 明

    ISSPセミナー(Polar oxides for energy conversion)  2013.6 

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    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:千葉県柏市  

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  • Modulation of electronic structure in α-(CrXFe1-X)2O3 solid solution for improving visible-light photocatalytic activity International conference

    H. Mashiko, T. Oshima, K. Yoshimatsu, E. Sakai, H. Kumigashira, A. Ohtomo

    The Seventh International Conference on the Science and Technology for Advanced Ceramics (STAC-7)  2013.6 

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    Venue:Yokohama  

    We report electronic structures and photoelectrochemical properties of α-(CrXFe1-X)2O3 solid solution films. We also discuss relation in the band gap, band structure, and visible-light photocatalytic activity.

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  • Epitaxial synthesis and electronic properties of double-perovskite Sr2TiRuO6 International conference

    K. Nogami, H. Mashiko, K. Yoshimatsu, E. Sakai, H. Kumigashira, O. Sakata, T. Oshima, A. Ohtomo

    The Seventh International Conference on the Science and Technology for Advanced Ceramics (STAC-7)  2013.6 

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    Venue:Yokohama  

    We have studied Sr2TiRuO6 (STRO) system, which consists of SrTiO3 (a diamagnetic band insulator) and SrRuO3 (a ferromagnetic metal). We have succeeded in growing highly ordered double-perovskite STRO films for the first time. Their electronic properties were revealed to strongly depend on degree of Ti/Ru order.

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  • Cathodoluminescence properties of β-Al2xGa2-2xO3

    A. Mukai, T. Oshima, T. Nagami, K. Fukuda, T. Suyama, A. Ohtomo

    2013.5 

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  • Semi-insulation of conducting β-Ga2O3 single crystal surfaces by thermal oxidation

    T. Oshima, K. Kaminaga, A. Mukai, K. Sasaki, T. Masui, A. Kuramata, S. Yamakoshi, S. Fujita, A. Ohtomo

    2013.5 

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  • Interface engineering of transition-metal oxides for energy technologies

    A. Ohtomo

    2013.4 

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  • Oxide photonics and electronics

    A. Ohtomo

    2013.4 

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    Among oxide materials, zinc oxide (ZnO) has outstanding optical and electronic properties, such as large exciton-binding energy, excellent luminescent properties, high electron mobility, piezoelectricity, and a direct wide bandgap. All of these features and the relatively easy growth of ZnO nanostructures have spurred the investigation of these materials for a large scope of photonics and electronics applications, including light-emitting diodes (LEDs), photodetectors, and transparent field-effect transistors.

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  • 熱酸化によるβ-Ga2O3単結晶表面の半絶縁層形成

    大島 孝仁, 神永 健一, 向井 章, 佐々木 公平, 増井 建和, 倉又 朗人, 山腰 茂伸, 藤田 静雄, 大友 明

    2013.3 

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    β型酸化ガリウム(β-Ga2O3)は,酸化物半導体最大のバンドギャップ(4.7 ~ 5.0 eV)
    を有し,融液法による単結晶の高品質化,大口径化,導電性制御が飛躍的に進展し,薄膜成長,
    デバイスプロセス技術の開発と共に,研究が加速している半導体材料である[1,2].我々は,この
    導電性単結晶に対して簡便処理である熱酸化により,表面近傍が半絶縁化することを見出した[3].
    これを利用すれば,基板の絶縁化,素子のパッシベーション,受光素子の受光層形成などに応用
    できると考えている.今回半絶縁層形成のメカニズムを明らかにしたので報告する.[1] M. Higashiwaki, et., al., APL 100 (2012) 013504.
    [2] K. Sasaki, et. al., APEX 5 (2012) 035502.
    [3] T. Oshima, et. al., APEX 1 (2008) 011202.

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  • α-(CrxFe1-x)2O3薄膜の半導体光電極評価

    増子 尚徳, 宋 浚太, 岩崎 孝之, 波多野 睦子, 大島 孝仁, 大友 明

    2013.3 

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  • β-Ga2O3 (201)基板上のAl2xGa2-2xO3薄膜の成長制御

    向井 章, 大島 孝仁, 佐々木 公平, 増井 建和, 倉又 朗人, 山腰 茂伸, 大友 明

    2013.3 

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  • LiTi2O4薄膜における超伝導特性の膜厚依存性

    横山 耕祐, 大島 孝仁, 大友 明

    2013.3 

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    【はじめに】近年注目されている超伝導・常伝導状態間の電界効果スイッチングにおいて,低キ
    ャリア濃度の超伝導材料を検討することは本質的に重要である.我々はその候補としてLiTi2O4
    (バルクTc = 13.8 K)に着目した[1].電界効果によるキャリア濃度変調は極薄膜で行う必要があ
    るが,29 nm より薄い薄膜では超伝導が消失するという実験結果が報告されている[2].我々はさ
    らに薄い薄膜でも超伝導転移を観測したので報告する.
    【実験】MgAl2O4(111)基板上に,パルスレーザ堆積法で薄膜を成長した.膜厚は段差計により測
    定した.抵抗率の温度依存性は,自作の測定装置を用いて四端子法により調べた.
    【結果と考察】抵抗率の温度依存性をFig. 1 に示す.8 nm の薄膜は半導体的であるが,11 ~ 19 nm
    の薄膜は超伝導転移を示した.全て多段階転移であり残留抵抗も確認されたことから,超伝導パ
    スを阻害する不均一状態が存在していると考えられる.より均質な薄膜を得るため,表面平坦性
    の高い基板を使用したところ完全な転移が観測された.厚さ11 nm の薄膜の表面モフォロジーと
    超伝導特性をFig. 2 に示す.基板を含めた成長条件を最適化し,二次元性成長を促進することに
    よって,さらに薄い薄膜でも超伝導の発現が期待できる.
    【謝辞】液体He を用いた測定装置設計に関してご指導いただきました,東京大学物性研究所リッ
    プマーミック准教授,高橋竜太助教,原田尚之博士に深く感謝いたします.
    [1] 横山耕祐 他, 第73 回応用物理学会学術講演会 13p-C13-17 (2012 秋 愛媛・松山大学).
    [2] Rajesh V. Chopdekar, Elke Arenholz and Yuri Suzuki, arXiv:0707.0522 [cond-mat.supr-con], Nov. 1,
    (2009).

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  • ダブルペロブスカイト型Sr2TiRuO6の薄膜成長と物性

    野上 顕悟, 増子 尚徳, 坂井 延寿, 組頭 広志, 大島 孝仁, 大友 明

    2013.3 

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  • 酸化物半導体材料・デバイスの基礎と最新動向

    大友 明

    2012.9 

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  • カソードルミネッセンス法によるAl2xGa2-2xO3薄膜の発光特性評価

    向井 章, 大島 孝仁, 大友 明

    2012.9 

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  • パルスレーザ堆積法によるLiTi2O4 薄膜のエピタキシャル成長

    横山 耕祐, 丹羽 三冬, 大島 孝仁, 大友 明

    2012.9 

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  • Epitaxial syntheses of functioning oxide interface and nanomaterials

    A. Ohtomo

    2012.9 

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  • 遷移金属酸化物混晶におけるバンドギャップ狭帯化の起源

    増子 尚徳, 坂井 延寿, 組頭 広志, 大島 孝仁, 大友 明

    2012.9 

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  • Mist chemical vapor deposition of γ-phase Ga2O3 thin films

    T. Oshima, T. Nakazono, A. Mukai, A. Ohtomo

    2012.8 

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  • Epitaxial stabilization of gamma-phase Ga2O3 thin films by Mist CVD

    T. Oshima, T. Nakazono, A. Mukai, A. Ohtomo

    2012.7 

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  • Design and synthesis of ubiquitous-elements-based novel magnetic oxides

    A. Ohtomo, S. Chakraverty, H. Mashiko, T. Oshima, M. Kawasaki

    2012.6 

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  • 薄膜積層構造による遷移金属酸化物の光電変換機能開発

    大友 明

    2012.6 

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  • 酸化物半導体の基礎と薄膜・デバイス研究動向

    大友 明

    2012.6 

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  • ワイドギャップ半導体酸化ガリウムの基本特性と応用

    藤田 静雄, 東脇 正高, 佐々木 公平, 倉又 朗人, 増井 建和, 山腰 茂伸, 大島 孝仁, 大友明

    2012.4 

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  • 酸化ガリウム半導体の機能とデバイス応用

    藤田 静雄, 東脇 正高, 佐々木 公平, 倉又 朗人, 増井 建和, 山脇 茂伸, 大島 孝仁, 大友 明

    2012.3 

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  • α-(V1-xCrx)2O3薄膜の作製と光学特性評価

    野田 淳, 増子 尚徳, 大島 孝仁, 大友 明

    2012.3 

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    我々は,これまで可視光領域で光学遷移を示
    す3dn (n > 0)遷移金属酸化物固溶体に着目し,
    α-(Cr1-xFex)2O3(コランダム型構造)混晶薄膜の可視光応答特性について報告した [1].α-Cr2O3
    とα-Fe2O3 の接合界面がタイプⅡのバンド不連続を有することに起因して,固溶体を形成したときに新たなバンド間遷移(Cr t2g およびO 2p → Fe t2g*)が生じることで,バンドギャップが狭くなることを見出した [2].今回,同様の現象が,異なるカチオンの組み合わせであるα-(V1-xCrx)2O3(コランダム型構造)においても実現できるか検討した.
    c 面sapphire 基板上に,PLD 法を用いてα-(V1-xCrx)2O3 (0 ≤ x ≤ 0.5)エピタキシャル薄膜を成膜した.まずV2O3 に対して,最適な成膜条件を探索したところ,成膜温度900ºC,酸素分圧1.0 × 10-6 Torr で高い結晶性が得られたので,この条件下で混晶薄膜を作製した.Fig. 1にα-(V1-xCrx)2O3 薄膜のXRD パターンを示す.
    単相でかつ良好な結晶性のエピタキシャル薄膜が得られていることが分かる.Fig. 2 にx =0.0 およびx = 0.48 の薄膜のAFM 像を示す.表面ラフネスが数nm 程度であることから,光学散乱の影響を受けない吸収スペクトルが得られた.[1] 増子尚徳 他, 第58 回応用物理学関係連合講演会
    25p-BZ-11 (2011 春 神奈川工科大学).
    [2] H. Mashiko et al., Appl. Phys. Lett. 99, 241904 (2011).
    [3] W. R. Robinson, Acta Cryst. B 31, 1153 (1975).
    [4] T. Grygar et al., Ceram.-Silikáty 47, 32 (2003).

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  • Ga2O3の結晶多形とヘテロエピ構造:β-Ga2O3/(0001)α-Al2O3

    向井 章, 中園 敦巳, 大島 孝仁, 大友明

    2012.3 

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  • ペロブスカイト型鉄酸化物薄膜の原子秩序構造と磁性

    大友 明

    2012.2 

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  • Quantum transport at polar oxide interfaces

    A. Ohtomo

    2012.1 

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    Atomic-scale control of oxide heteroepitaxy is of growing importance from the viewpoints of fundamental physics and device applications. Many of intriguing physical phenomena occur in naturally layered structures of transition-metal oxides, leading to recent focuses on "epitaxial" design of new compounds upon the layer-by-layer growth of artificial superstructures. We have been studying magnetotransport properties of high-mobility electrons at polar oxide heterointerfaces. In the first case, we have created a metallic state in atomically abrupt heterointerface between two band insulators, SrTiO3 and LaAlO3 [1], in which naturally arising polarity discontinuity introduces high-mobility electrons in SrTiO3. Dramatic magnetoresistance oscillations appeared at low temperatures. Moreover, electric-field induced metal-insulator and superconductor-insulator transitions have been demonstrated. The second example is ZnO/MgZnO heterostructures, in which we have recently succeeded in observing fractional quantum Hall effect [2]. These results have implications for all oxide heteroepitaxial devices. In particular, the high mobilities achieved present the possibility to combine the world of oxides (superconductors, multiferroics, colossal magnetoresistance) with the world of semiconductor heterostructures.

    [1] A. Ohtomo and H. Y. Hwang, Nature 427, 423-426 (2004). [2] A. Tsukazaki, A. Ohtomo, M. Kawasaki, et al. Nat. Mater. 9, 889-893 (2010)

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  • Ferrimagnetism induced by spontaneous atomic ordering in epitaxial double-perovskite films

    Akira Ohtomo

    2011.12 

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  • パルスレーザ堆積法によるLiNbO3のホモエピタキシャル成長

    横山 耕祐, 大島 孝仁, 大友 明

    2011.9 

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  • Preparation and optical characterization of (CrxFe1-x)2O3 thin films

    H. Mashiko, T. Oshima, A. Ohtomo

    2011.7 

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  • PLD growth and optical characterization of composition-spread Al2xGa2-2xO3 films

    Akira Mukai, Takayoshi OSHIMA, Akira Ohtomo

    2011.7 

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  • ペロブスカイト鉄酸化物エピタキシャル薄膜の秩序構造と磁性

    大友 明

    2011.3 

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  • (Fe1-XCrx)2O3薄膜の作製と光学特性評価

    増子 尚徳, 大島孝仁, 大友 明

    2011.3 

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  • Al2XGa2-2XO3コンポジションスプレッド薄膜のPLD成長と光学特性評価

    向井 章, 大島孝仁, 大友明

    2011.3 

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  • La2CrFeO6薄膜におけるCr/Feの自発的再配列とフェリ磁性

    大友 明

    2011.1 

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    We find spontaneous ordering of B-site transition-metals in pulsed-laser deposited epitaxial La2CrFeO6 films. The highest ordered sample exhibits a fraction of antisite disorder of only 0.05 and a saturation magnetization of ~2mu_B per formula unit at 5 K. Magnetic ground state of this double perovskite that has been long debate is unambiguously revealed to be ferrimagnetic for the first time.

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  • Observation of next nearest neighbor interaction in the magnetic state of epitaxially grown Sr2TaFeO6 double perovskites

    S. Chakraverty, A. Ohtomo, M. Saito, S. Tsukimoto, Y. Ikuhara, M. Kawasaki

    2010.9 

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  • 酸化物界面の二次元伝導

    大友 明

    2010.6 

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  • 究極の透明酸化物半導体デバイス創製を目指して~現状と今後の展望~

    大友 明

    2010.5 

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  • 21aHL-4 Excitonic characteristics in wide band-gap CuTMO_2 epitaxial thin films

    Makino T., Liu F., Hiraga H., Fukumura T., Ohtomo A., Kong Y. F., Kawasaki M.

    Meeting abstracts of the Physical Society of Japan  2010.3  The Physical Society of Japan (JPS)

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  • 22pGS-6 Highly-Charged Electric-Double-Layer Interfaces : from Electrochemistry to Electrostatics

    Yuan H. T., Shimotani H., Ye J. T., Yoon S. J., Tsukazaki A., Ohtomo A., Kawasaki M., Iwasa Y.

    Meeting abstracts of the Physical Society of Japan  2010.3  The Physical Society of Japan (JPS)

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  • Structural analysis of electron-doped Ruddlesden-Popper homologous series thin films

    M. Okude, M. Saito, S. Tsukimoto, Z. Wang, T. Mizoguchi, Y. Ikuhara, A. Ohtomo, T. Kita, M. Kawasaki

    2010.3 

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  • Collective effects in magneto-optical spectra of high-density electron system in modulation-doped ZnO/Mg_x_Zn_1-x_O quantum wells

    T. Makino, Y. Furuta, A. Tsukazaki, A. Ohtomo, Y. Segawa, R. Shen, S. Takeyama, Y. Takagi, M. Kawasaki

    2010.3 

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  • Fractional quantum Hall effect in MgZnO/ZnO heterostructures

    A. Tsukazaki, S. Akasaka, K. Nakahara, A. Kamisawa, Y. Ohno, H. Ohno, A. Ohtomo, M. Kawasaki

    2010.3 

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  • 絶縁体表面・界面の金属伝導とエレクトロニクス応用

    大友 明

    2010.3 

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  • Structural and magnetic properties of double perovskites

    S. Chakraverty, A. Ohtomo, M. Kawasaki

    2010.3 

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  • Conducting polymer Schottky contact on ZnO with interfacial self-assembled monolayer

    R. Y. Gunji, H. Hiraga, A. Ohtomo, T. Makino, T. Fukumura, M. Kawasaki

    2010.3 

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  • In_2_O_3_単結晶薄膜の電子濃度制御

    小田 聖翔, 奥出 正樹, 大友 明, 川崎 雅司

    2010.3 

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  • Coexistence of excitonic and magnetic properties in natural superlattices composed of Cu_2_O and transition metal oxides

    H. Hiraga, T. Makino, T. Fukumura, A. Ohtomo, M. Kawasaki

    2010.3 

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  • Spontaneous atomic ordering in epitaxial double perovskite: La_2_FeCrO_6_ revisited

    S. Chakraverty, M. Okude, A. Ohtomo, H. Hiraga, M. Kawasaki

    2010.2 

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  • EMISSION BLUESHIFT OF ZnO/MgZnO SINGLE QUANTUM WELLS WITH N-TYPE DOPING TO BARRIER LAYERS

    T. Makino, Y. Furuta, Y. Segawa, A. Tsukazaki, A. Ohtomo, Y. Hirayama, R. Shen, S. Takeyama, Y. Takagi, M. Kawasaki

    11TH INTERNATIONAL CONFERENCE ON OPTICS OF EXCITONS IN CONFINED SYSTEMS (OECS11)  2010 

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  • Metallic conduction in Sr_n+1_Ti_n_O_3n+1_ thin films grown by pulsed-laser deposition

    M. Okude, M. Saito, S. Tsukimoto, Z. Wang, T. Mizoguchi, Y. Ikuhara, A. Ohtomo, T. Kita, M. Kawasaki

    2009.12 

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  • Spontaneous atomic ordering in epitaxial double perovskites: Sr_2_FeTaO_6_ , La_2_FeCrO_6_

    S. Chakraverty, M. Okude, A. Ohtomo, H. Hiraga, M. Kawasaki

    2009.12 

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  • デラフォサイト型遷移金属酸化物エピタキシャル薄膜の作製と特異な励起子物性

    平賀 広貴, 牧野 哲征, 福村 知昭, 大友 明, 大久保 昭, 木村 久道, 川崎 雅司

    2009.11 

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  • カルボキシル結合基を有するフッ素系自己組織化単分子膜の酸化物基板上への形成

    郡司 遼佑, 平賀 広貴, 大友 明, 牧野 哲征, 福村 知昭, 川崎 雅司

    2009.11 

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  • カルボキシル結合基を有するフッ素系自己組織化単分子膜の酸化物基板上への形成

    郡司 遼佑, 平賀 広貴, 大友 明, 牧野 哲征, 福村 知昭, 川崎 雅司

    2009.11 

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  • Spontaneous atomic ordering in epitaxial double perovskites: Sr_2_FeTaO_6_ and La_2_FeCrO_6_

    S. Chakraverty, M. Okude, A. Ohtomo, H. Hiraga, M. Kawasaki

    2009.10 

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  • Epitaxial synthesis of metallic Sr_n+1_Ti_n_O_3n+1_

    M. Okude, M. Saito, S. Tsukimoto, Z. Wang, T. Mizoguchi, Y. Ikuhara, A. Ohtomo, T. Kita, M. Kawasaki

    2009.10 

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  • Excitonic and magnetic properties in natural superlattices composed of Cu_2_O and transition metal oxides

    H. Hiraga, T. Makino, T. Fukumura, A. Ohtomo, M. Kawasaki

    2009.10 

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  • Charged exciton emission in n-type modulation-doped ZnO/MgZnO single quantum wells

    T. Makino, Y. Furuta, Y. Segawa, A. Tsukazaki, A. Ohtomo, Y. Hirayama, R. Shen, S. Takeyama, Y. Takagi, M. Kawasaki

    2009.10 

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  • デラフォサイト型CuTMO_2_薄膜のエピタキシャル成長と光学的性質

    平賀広貴, 福村 知昭, 大友 明, 牧野 哲征, 大久保 昭, 木村久道, 川崎雅司

    2009.9 

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  • 2DEG移動度100,000 cm^2^V^-1^s^-1^を越えるMgZnO/ZnO界面の実現

    塚崎 敦, 赤坂 俊輔, 中原 健, 神澤 公, 大野 裕三, 大野 英男, 大友 明, 川崎雅司

    2009.9 

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  • バッファー層を用いたYSZ基板上In_2_O_3_薄膜のヘテロエピタキシャル成長

    小田 聖翔, 奥出 正樹, 大友 明, 川崎 雅司

    2009.9 

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  • 酸化物基板上への高極性カルボン酸系SAMの形成

    郡司 遼佑, 平賀広貴, 大友 明, 牧野 哲征, 福村 知昭, 川崎雅司

    2009.9 

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  • クロージングリマーク:社会の持続的発展を目指す酸化物研究開発の現状と未来

    大友 明

    2009.9 

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  • 26aYD-5 Tunable Frohlich Polaron in ZnO Electric-Double-Layer Transistors by Using Ionic-Liquid Dielectrics

    Yuan H. T., Shimotani H., Ohtomo A., Tsukazaki A., Kawasaki M., Iwasa I.

    Meeting abstracts of the Physical Society of Japan  2009.8  The Physical Society of Japan (JPS)

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  • 28aXB-10 ZnO単一ヘテロ構造における磁気発光特性(励起子・ポラリトン,領域5,光物性)

    牧野 哲征, 瀬川 勇三郎, 塚崎 敦, 大友 明, 沈 睿, 嶽山 正二郎, 赤坂 俊輔, 中原 健, 川崎 雅司

    日本物理学会講演概要集  2009.8  一般社団法人日本物理学会

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  • 準安定ペロブスカイト酸化物自然超格子構造のエピタキシャル成長とマクロ物性

    大友 明, Chakraverty Suvankar, 奥出 正樹, 川崎雅司

    2009.8 

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  • Epitaxial synthesis of metallic Ruddlesden-Popper homologous series thin films grown by pulsed-laser deposition

    M. Okude, M. Saito, S. Tsukimoto, Z. Wang, T. Mizoguchi, Y. Ikuhara, A. Ohtomo, T. Kita, M. Kawasaki

    2009.8 

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  • Transistor operation at MgZnO/ZnO interface by Schottky gating with conducting polymer

    A. Tsukazaki, M. Nakano, S. Akasaka, K. Nakahara, A. Kamisawa, A. Ohtomo, M. Kawasaki

    2009.7 

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  • 電子ドープしたRuddlesden-Popper相薄膜の微細原子構造解析

    奥出 正樹, 斎藤 光浩, 着本 享, 王 中長, 溝口 照康, 幾原 雄一, 大友 明, 木太 拓志, 川崎 雅司

    2009.5 

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  • Field-effect modulation of superconductivity in non-doped SrTiO_3_ single crystal with double gate configuration

    K. Ueno, S. Nakamura, H. Shimotani, A. Ohtomo, N. Kimura, T. Nojima, H. Aoki, Y. Iwasa, M. Kawasaki

    2009.4 

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  • Electric-field control of two dimensional transport at MgZnO/ZnO interfaces by conducting polymer Schottky gate

    A. Tsukazaki, M. Nakano, S. Akasaka, K. Nakahara, A. Kamisawa, A. Ohtomo, M. Kawasaki

    2009.4 

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  • 28pVA-6 Influence of Ga doping to barrier layers on optical properties of ZnO single quantum wells

    Furuta Y., Makino T., Tsukazaki A., Ohtomo A., Segawa Y., Hirayama Y., Shen Rui, Takeyama S., Takagi Y., Kawasaki M.

    Meeting abstracts of the Physical Society of Japan  2009.3  The Physical Society of Japan (JPS)

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  • 29pYG-2 Let H_2O Feel ZnO polarity : Water Effect in Protic-Ionic-Liquid Gated ZnO Electric-Double-Layer Transistors

    Yuan H. T., Shimotani H., Ohtomo A., Tsukazaki A., Kawasaki M., Iwasa Y.

    Meeting abstracts of the Physical Society of Japan  2009.3  The Physical Society of Japan (JPS)

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  • Epitaxial synthesis of double perovskite oxides

    S. Chakraverty, A. Ohtomo, M. Kawasaki

    2009.3 

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  • Phase diagram of superconductivity in non-doped SrTiO_3_ single crystalmodulated by electric field-effect

    K. Ueno, S. Nakamura, H. Shimotani, A. Ohtomo, N. Kimura, T. Nojima, H. Aoki, Y. Iwasa, M. Kawasaki

    2009.3 

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  • Epitaxial growth and properties of delafossite (CuTMO_2_) thin films on MgAl_2_O_4_and α-Al_2_O_3_ substrates

    H. Hiraga, T. Fukumura, T. Makino, A. Ohtomo, M. Kawasaki

    2009.3 

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  • Self-assembled stearic acid monolayer on oxide surfaces

    R. Y. Gunji, H. Hiraga, M. Nakano, A. Ohtomo, T. Makino, T. Fukumura, M. Kawasaki

    2009.3 

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  • LaドープしたRuddlesden-Popper相薄膜の微細原子構造解析

    奥出 正樹, 斎藤 光浩, 着本 享, 王 中長, 溝口 照康, 幾原 雄一, 大友 明, 木太 拓志, 川崎 雅司

    2009.3 

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  • 酸化物基板上へのステアリン酸SAMの形成

    郡司 遼佑, 平賀 広貴, 中野 匡規, 大友 明, 牧野 哲征, 福村 知昭, 川崎 雅司

    2009.3 

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  • High-mobility two-dimensional electron gas in polar oxide interfaces

    Akira Ohtomo

    unpublished  2009.3 

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  • Synthesis of electron-doped Ruddlesden-Popper homologous series thin films by pulsed-laser deposition

    M. Okude, A. Ohtomo, T. Kita, M. Kawasaki

    2009.3 

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  • In_2_O_3_単結晶薄膜の作製とバンドギャップ制御

    小田 聖翔, 奥出 正樹, 大友 明, 川崎 雅司

    2009.3 

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  • ダブルゲート構造を用いたSrTiO_3_の超伝導制御析

    上野 和紀, 中村 慎太郎, 下谷 秀和, 大友 明, 野島 勉, 木村 憲彰, 青木 晴善, 岩佐 義宏, 川崎 雅司

    2009.3 

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  • Quantum-confined Stark and Franz–Keldysh effects in ZnO/Mg_x_Zn_1-x_O quantum well structures

    T. Makino, Y. Furuta, A. Tsukazaki, A. Ohtomo, Y. Segawa, Y. Takagi, M. Kawasaki

    2009.3 

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  • デラフォサイト型遷移金属酸化物エピタキシャル薄膜の作製と物性評価

    平賀 広貴, 岩崎 洋介, 福村 知昭, 大友 明, 牧野 哲征, 大久保 昭, 木村 久道, 川崎 雅司

    2009.3 

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  • Self-assembled octadecanoic acid monolayer on oxide surfaces

    R. Y. Gunji, H. Hiraga, M. Nakano, A. Ohtomo, T. Makino, T. Fukumura, M. Kawasaki

    2009.2 

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  • Optical and electrical properties of ZnO and related hetero-structures

    T. Makino, A. Tsukazaki, A. Ohtomo, M. Kawasaki, Y. Segawa

    Proceedings of the International Workshop on Photonics and Applications (Advances in Optics, Photonics, Spectroscopy & Applications V, edited by P. Brechignac, K. Hakuta, H. Lim, N.V. Hieu, N.D. Hung and V. A. Orlovich)  2009.2  Vietnam Academic Press

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  • Metallic conduction in Ruddlesden-Popper homologous series thin films grown by pulsed-laser deposition

    M. Okude, A. Ohtomo, T. Kita, M. Kawasaki

    2009.2 

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  • Electrostatic tuning of superconductivity in non-doped SrTiO_3_ with double gate configuration

    K. Ueno, H. Shimotani, A. Ohtomo, T. Nojima, H. Aoki, Y. Iwasa, M. Kawasaki

    2009.1 

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  • ヘテロ固体界面が生み出す革新物性

    大友 明

    2009.1 

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  • Electrical tuning of two-dimensional electron gas at polar oxide junctions, part I

    Akira Ohtomo

    2008.12 

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  • Electrical tuning of two-dimensional electron gas at polar oxide junctions, part II

    Akira Ohtomo

    2008.12 

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  • Two-dimensional magnetotransport in oxide quantum wells

    Akira Ohtomo

    2008.11 

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  • ワイドギャップ酸化物半導体材料とデバイス

    大友 明

    2008.10 

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  • 21pQC-2 Low Temperature Carrier Accumulation in Electric Double Layer Transistor

    Yuan Hongtao, Shimotani H., Iwasa Y., Ohtomo A., Tsukazaki A., Kawasaki M.

    Meeting abstracts of the Physical Society of Japan  2008.8  The Physical Society of Japan (JPS)

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  • 21pQC-2 Low Temperature Carrier Accumulation in Electric Double Layer Transistor

    Yuan Hongtao, Shimotani H., Iwasa Y., Ohtomo A., Tsukazaki A., Kawasaki M.

    Meeting abstracts of the Physical Society of Japan  2008.8  The Physical Society of Japan (JPS)

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  • 21pQC-3 Surface quantum states for SrTiO_3 Electric double-layer transistor

    Ueno K., Shimotani H., Ohtomo A., Iwasa Y., Kawasaki M.

    Meeting abstracts of the Physical Society of Japan  2008.8  The Physical Society of Japan (JPS)

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  • 21pQC-3 Surface quantum states for SrTiO_3 Electric double-layer transistor

    Ueno K., Shimotani H., Ohtomo A., Iwasa Y., Kawasaki M.

    Meeting abstracts of the Physical Society of Japan  2008.8  The Physical Society of Japan (JPS)

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  • High-mobility electron transport at polar oxide heterointerfaces

    Akira Ohtomo

    2008.8 

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  • 透明ナノ界面の制御とデバイス応用

    大友 明

    2008.7 

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  • 透明酸化物エレクトロニクスの実現に向けて

    大友 明

    2008.7 

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  • Surface and interface engineering of polar oxide heterostructures

    Akira Ohtomo

    2008.7 

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  • High-mobility electron gas at polar oxide heterointerfaces

    Akira Ohtomo

    2008.6 

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  • High-mobility electron gas at polar oxide heterointerfaces

    Akira Ohtomo

    2008.6 

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  • High-mobility electron gas at polar oxide heterointerfaces

    Akira Ohtomo

    2008.6 

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  • High-mobility electron gas at polar oxide heterointerfaces

    Akira Ohtomo

    2008.6 

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  • 酸化物へテロ界面の原子レベルエピタキシーと量子化伝導

    大友 明

    2008.3 

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  • Quantum Hall effect in ZnO

    A. Ohtomo, A. Tsukazaki, T. Kita, Y. Ohno, H. Ohno, K. Nakahara, H. Yuji, K. Tamura, S. Akasaka, H. Takasu, M. Kawasaki

    2008.2 

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  • 透明酸化物界面の高移動度伝導

    大友 明

    2008.1 

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  • 分極した酸化物界面における高移動度電子ガスの形成

    大友 明

    2008.1 

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  • Epitaxial Growth and Transport Properties of High-Mobility ZnO-Based Heterostructures

    A. Tsukazaki, A. Ohtomo, M. Kawasaki

    FRONTIERS IN MATERIALS RESEARCH  2008 

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  • Quantized electronic states in polar oxide heterointerfaces

    Akira Ohtomo

    2007.11 

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  • High-mobility electron gas at polar oxide heterointerfaces

    Akira Ohtomo

    2007.11 

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  • Oxide semiconductor quantum electronics

    Akira Ohtomo

    2007.10 

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  • 23pPSA-2 Optical assessment of interface states of SrTiO_3/LaAlO_3 studied by RDS

    Tanigawa S., Furuta Y., Makino T., Takagi Y., Yamada Y. F., Ohtomo A., Kawasaki M.

    Meeting abstracts of the Physical Society of Japan  2007.8  The Physical Society of Japan (JPS)

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  • 22pWF-8 Superconductivity of SrTiO_3 induced by electric double layer gating

    Ueno K., Shimotani H., Ohtomo A., Iwasa Y., Kawasaki M., Nakamura S., Kimura N., Nojima T., Aoki H.

    Meeting abstracts of the Physical Society of Japan  2007.8  The Physical Society of Japan (JPS)

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  • 21pRJ-5 Hall Effect Measurements of High Density Carriers Induced by Electric double layer FET on ZnO Crystal Thin Film

    Shimotani Hidekazu, Asanuma Haruhiko, Tsukazaki Atsushi, Ohtomo Akira, Kawasaki Masashi, Iwasa Yoshihiro

    Meeting abstracts of the Physical Society of Japan  2007.2  The Physical Society of Japan (JPS)

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    Event date: 2007.2

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  • 電気二重層トランジスタを用いたSrTiO3単結晶の絶縁体-超伝導転移

    上野和紀, 中村慎太郎, 下谷秀和, 大友明, 野島勉, 木村憲彰, 青木晴善, 岩佐義宏, 岩佐義宏, 川崎雅司, 川崎雅司

    応用物理学会学術講演会講演予稿集  2007 

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  • Combinatorial technology towards ZnO-based light-emitting diodes

    A. Ohtomo, A. Tsukazaki, M. Kawasaki

    2006.9 

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  • Electronic structures of polar oxide heterointerfaces

    A. Ohtomo, P. Murugan, T. Nishimatsu, Y. Kawazoe, M. Kawasaki

    2006.9 

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  • Conducting interfaces between two insulating oxides

    A. Ohtomo

    2005.11 

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  • Integrated thin film and device libraries based on conducting wide-gap oxides

    A. Ohtomo, A. Tsukazaki, J. Nishimura, M. Kawasaki

    2005.11 

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  • 27aYT-9 Electrical and optical properties of doped ZnO thin films

    Makino T.

    Meeting abstracts of the Physical Society of Japan  2005.3  The Physical Society of Japan (JPS)

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  • 25aWE-6 Eleclioslalic charge modulation of epitaxial films of La_<0.33>Sr_<0.67>FCcO_3

    Ueno K., Suzuki I., Sato F., Ohtomo A., Kawasaki M.

    Meeting abstracts of the Physical Society of Japan  2005.3  The Physical Society of Japan (JPS)

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  • 12pRB-1 Electronic properties of (SrTiO_3)_<1-x>(LaAlO_3)_x solid solution thin films

    Nishimura J, Ohtomo A, Ohkubo A, Murakami Y, Kawasaki M

    Meeting abstracts of the Physical Society of Japan  2004.8  The Physical Society of Japan (JPS)

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  • 14pTL-5 High-mobility electron transport in SrTiO_3 heterostructures

    Ohtomo A., Hwang H. Y., Muller D. A.

    Meeting abstracts of the Physical Society of Japan  2004.8  The Physical Society of Japan (JPS)

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  • 14pXC-13 Many-body absorption-edge singularity on an exciton-phonon complex in ZnO : Ga epilayers

    Makino T., Segawa Y.

    Meeting abstracts of the Physical Society of Japan  2004.8  The Physical Society of Japan (JPS)

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  • 27aZP-10 Fabrication of epitaxial perovskite oxide field effect transistors

    Ohtomo A., Nishimura J., Ohkubo A., Murakami Y., Kawasaki

    Meeting abstracts of the Physical Society of Japan  2004.3  The Physical Society of Japan (JPS)

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  • 30aPS-29 Temperature quenching of exciton luminescence intensity in ZnO/(Mg,Zn)O multiple quantum wells

    Makino T.

    Meeting abstracts of the Physical Society of Japan  2004.3  The Physical Society of Japan (JPS)

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  • 27aZP-10 Fabrication of epitaxial perovskite oxide field effect transistors

    Ohtomo A., Nishimura J., Ohkubo A., Murakami Y., Kawasaki

    Meeting abstracts of the Physical Society of Japan  2004.3  The Physical Society of Japan (JPS)

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  • 28pXB-10 Valence state of Mn ion in [(LaMnO_3)_m(SrMnO_3)_m]_n artificial superlattices

    Nakao H, Nishimura J, Kodama S, Satoh T, Murakami Y, Ohtomo A, Fukumura T, Kawasaki M, Koida T

    Meeting abstracts of the Physical Society of Japan  2004.3  The Physical Society of Japan (JPS)

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  • Atomic layer control electronic properties of valence mismatched perovskite heterointerface

    Nishimura J., Ohkubo A., Ohtomo A., Murakami Y., Kawasaki M.

    Meeting abstracts of the Physical Society of Japan  2003.8  The Physical Society of Japan (JPS)

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  • ZnO/LiGaO2/GaNヘテロ構造の作製

    福崎正志, 西井潤弥, 塚崎敦, 大友明, 福村知昭, 大西剛, 角谷正友, 大野英男, 川崎雅司

    応用物理学関係連合講演会講演予稿集  2003.3 

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  • Optical properties of ZnO : Al opilayers : Observation of RT many-body absorption-edge singularity?

    Makino Takayuki, Chia C. H., Tamura K., Segawa Y., Kawasaki M., Ohtomo A., Koinuma H.

    Meeting abstracts of the Physical Society of Japan  2003.3  The Physical Society of Japan (JPS)

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  • Search for Ferromagnetic Ordering in p- and n-type II-VI Diluted Magnetic Semiconductors

    T. Andrearczyk, J. Jaroszynski, G. Grabecki, M. Sawicki, Le Van Khoi, T. Dietl, D. Ferrand, C. Bourgognon, J. Cibert, S. Tatarenko, T. Fukumura, Zhengwu Jin, A. Ohtomo, H. Koinuma, M. Kawasaki

    Abstract of Int. School of Semiconductor Compounds, Jaszowiec, Poland  2000.9 

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  • 収束ビームX線回折法によるコンビナトリアルエピタキシャル薄膜の同時評価

    表和彦, 菊池哲夫, 原田仁平, 大友明, 大谷亮, 川崎雅司, 大西剛, 小宮山大輔, 鯉沼秀臣

    応用物理学関係連合講演会講演予稿集  2000.3 

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  • Magnetic properties of oxide diluted magnetic semiconductor Zn_<1-x>Mn_xO film

    Fukumura T., Jin Zhengwu, Yoo Y. Z., Hasegawa K., Ohtomo A., Shono T., Hasegawa T., Koinuma H., Kawasaki M.

    Meeting abstracts of the Physical Society of Japan  2000.3  The Physical Society of Japan (JPS)

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  • 26pYC-4 格子整合基板上に成膜したZnO薄膜における光学スペクトルの温度変化

    謝 振豪, 牧野 哲征, 磯谷 玄, 瀬川 勇三郎, 安田 隆, 川崎 雅司, 大友 明, 田村 謙太郎, 鯉沼 秀臣

    日本物理学会講演概要集  1999.9  一般社団法人日本物理学会

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  • 酸化物人工格子のパラレル合成と評価

    川崎雅司, 大西剛, 小宮山大輔, 鯉田崇, 大友明, 福村知昭, 松本祐司, LIPPMAA M, 鯉沼秀臣

    応用物理学会学術講演会講演予稿集  1999.9 

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  • コンビナトリアルlaser MBE法によるSrVO3/SrTiO3超格子薄膜の作製

    小宮山大輔, 大西剛, LIPPMAA M, 大友明, 川崎雅司, 鯉沼秀臣

    応用物理学関係連合講演会講演予稿集  1999.3 

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  • 29a-ZG-8 Degenerated Four Wave Mixing Spectra in ZnO semiconductor film structure

    Makino Takayuki, Tuan N.T., Segawa Yuzaburo, Ohtomo Akira, Kawasaki Masashi, Koinuma Hideomi

    Meeting abstracts of the Physical Society of Japan  1999.3  The Physical Society of Japan (JPS)

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  • 29a-ZG-7 Ultraviolet Excitonic Laser Emission from ZnO Nanocrystalline Thin Film

    Kawasaki M., Ohtomo A.

    Meeting abstracts of the Physical Society of Japan  1999.3  The Physical Society of Japan (JPS)

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  • 7p-J-16 Lasing of Exciton at Room Temperature in ZnO Thin Film Grown by Laser MBE.

    Segawa Y., Tang Z.K., Wong K.L., Ohtomo A., Kawasaki M., Koinuma H.

    Meeting abstracts of the Physical Society of Japan  1997.9  The Physical Society of Japan (JPS)

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    Event date: 1997.9

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  • 7p-J-17 Cathodoluminesence of ZnO growth thin film with Transmission Electron Microscopy

    Yamabe J., Yamamoto N., Ohtomo A., Kawasaki M.

    Meeting abstracts of the Physical Society of Japan  1997.9  The Physical Society of Japan (JPS)

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    Event date: 1997.9

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  • Topmost surface analyses of wurtzite-type ZnO by CAICISS.

    大西剛, 大友明, 吉田憲治, 佐々木権治, 川崎雅司, 吉本護, 鯉沼秀臣

    応用物理学関係連合講演会講演予稿集  1997.3 

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  • ZnOの量子構造の形成と室温レーザー発振

    大友 明, 川崎 雅司, 鯉沼 秀臣, 湯 子康, Yu Ping, Wong Goerge K. L., 瀬川 勇三朗

    未来開拓研究ニュースレター  1997.1 

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    Event date: 1997.1

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  • ZnOエキシトンレーザー

    川崎 雅司, 大友 明, 鯉沼 秀臣, 湯 子康, Yu Ping, Wong Goerge K. L., 瀬川 勇三朗

    第25回応物薄膜・表面セミナー  1997.1 

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  • Photoluminescence spectra of ZnO thin film dot grown by Laser MBE method

    Segawa Y., Ohtomo A., Kawasaki M., Koinuma H., Tang A.K., Wong K.L.

    Abstracts of the meeting of the Physical Society of Japan. Sectional meeting  1996.9  The Physical Society of Japan (JPS)

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    Event date: 1996.9

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  • 酸化物表面の電子構造

    川崎 雅司, 大橋 智, 大友 明, 北嶋 敏和

    1996.1  電子協酸化物エレクトロニクス研究報告書

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    Event date: 1996.1

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  • 新機能 -光物性

    大友 明, 川崎 雅司

    1996.1  電子協酸化物エレクトロニクス研究報告書

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  • 熱刺激電流測定法による有機電気光学デバイスの熱安定性の評価Ⅲ

    杵村和彦, 池本龍馬, 山田俊樹, 大友明, 田口大, 間中孝彰, 岩本光正

    2014年(平成26年)春季 第61回応用物理学会春季学術講演会  2014.3 

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Industrial property rights

  • 酸化ガリウム系半導体の製造方法

    大友明, 相馬拓人, 是石和樹, 加渡 幹尚

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    Applicant:国立大学法人東京工業大学, トヨタ自動車株式会社

    Application no:特願2022-134426  Date applied:2022.8

    Announcement no:特開2024-031100  Date announced:2024.3

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  • 酸化ガリウム系半導体の製造方法

    大友明, 相馬拓人, 加渡 幹尚

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    Applicant:国立大学法人東京工業大学, トヨタ自動車株式会社

    Application no:特願2020-156405  Date applied:2020.9

    Announcement no:特開2022-050042  Date announced:2022.3

    Patent/Registration no:特許第7477407号  Date registered:2024.4 

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  • 酸化ガリウムの製造方法

    大友明, 若林諒, 李政洙, 加渡 幹尚

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    Applicant:国立大学法人東京工業大学, トヨタ自動車株式会社

    Application no:特願2019-030421  Date applied:2019.2

    Announcement no:特開2020-117430  Date announced:2020.8

    Patent/Registration no:特許第7176977号  Date registered:2022.11 

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  • 金属化合物結晶性膜およびその製造方法

    大友明, 吉松公平, 呉東広平

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    Applicant:国立大学法人東京工業大学

    Application no:特願2016-154759  Date applied:2016.8

    Announcement no:特開2018-020946  Date announced:2018.2

    Patent/Registration no:特許第6945215号  Date registered:2021.9 

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  • 超伝導酸化物薄膜およびその製造方法

    吉松公平, 大友明

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    Applicant:国立大学法人東京工業大学

    Application no:特願2015-162168  Date applied:2015.8

    Announcement no:特開2017-039621  Date announced:2017.2

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  • 電気化学反応装置

    大島孝仁, 大友明, 佐々木 公平

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    Applicant:国立大学法人東京工業大学, 株式会社タムラ製作所

    Application no:特願2013-085494  Date applied:2013.4

    Announcement no:特開2014-205899  Date announced:2014.10

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  • Ga2O3系HEMT

    大友明, 大島孝仁, 藤田 静雄, 東脇 正高, 佐々木 公平

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    Applicant:国立大学法人東京工業大学, 株式会社タムラ製作所, 国立大学法人京都大学, 独立行政法人情報通信研究機構

    Application no:特願2013-532669  Date applied:2012.9

    Announcement no:特開(再表)2013/035841  Date announced:2015.3

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  • 発光素子及びその製造方法

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    Application no:特願2003-335898 

    Announcement no:特開2005-108869 

    Patent/Registration no:特許第3787635号 

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  • ワイドギャップ導電性酸化物混晶及びそれを用いた光デバイス

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    Application no:特願2004-231061 

    Announcement no:特開2006-49704 

    Patent/Registration no:特許第4243689号 

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  • 光半導体素子及びその製造方法

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    Applicant:科学技術振興事業団

    Application no:特願平9-68978 

    Announcement no:特開平10-256673 

    Patent/Registration no:第2996928号 

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  • コバルトドープニ酸化チタン薄膜の作製方法、コバルトドープニ酸化チタン膜、及び多層膜構造

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    Application no:特願2004-015502 

    Announcement no:特開2005-206890 

    Patent/Registration no:特許第3944584号 

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  • II族-酸化物を含む光半導体素子

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    Applicant:科学技術振興事業団

    Application no:特願平9-72003 

    Announcement no:特開平10-270749 

    Patent/Registration no:特許第3380422号 

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  • 半導体デバイス

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    Applicant:科学技術振興事業団

    Application no:特願平11-82043 

    Announcement no:特開2000-277534 

    Patent/Registration no:特許第3423896号 

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  • 薄膜及びp型酸化亜鉛薄膜製造方法と半導体デバイス

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    Application no:特願2004-31194 

    Announcement no:特開2005-223219 

    Patent/Registration no:特許第3834658号 

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  • 混晶化ニ酸化チタン、多層膜構造体、及び素子構造

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    Application no:特願2004-46540 

    Announcement no:特開2005-231979 

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Works

  • 酸化物量子井戸構造を用いた発光素子及び光非線形性素子の開発

    2003 - 2006

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Awards

  • Funai Prize

    2013.4   Funai Foundation for Information Technology  

    OHTOMO Akira

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  • 日本学士院学術奨励賞

    2013.1   日本学士院   高品質酸化物絶縁体界面での金属伝導

    大友 明

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  • JSPS Prize

    2012.12   Japan Society for the Promotion of Science  

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  • Gottfried Wagener Prize

    2011.5   German Innovation Award  

    OHTOMO Akira

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  • SSSJ Review Paper Award

    2009.10   The Surface Science Society of Japan  

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  • MEXT Young Scientists' Prize

    2009.4   MEXT  

    OHTOMO Akira

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    Country:Japan

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  • Sir Martin Wood Prize

    2007.11   Millennium Science Forum   High mobility electron gas at polar oxide heterointerfaces

    OHTOMO Akira

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  • 原田研究奨励賞

    2003.10  

    大友 明

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    Country:Japan

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  • 安藤博記念学術奨励賞

    2003.7  

    大友 明

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    Country:Japan

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  • Tejima Memorial Science Award (Doctor Dissertation Award)

    2001.3   Tejima Foundation for Industry and Education  

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    Country:Japan

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  • 応用物理学会講演奨励賞

    1997  

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    Country:Japan

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  • 日本MRS学術シンポジウム優秀賞

    1994  

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    Country:Japan

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Research Projects

  • A study on the interfaces of transition-metal oxides with low valence and metastable structures by the electrochemical modulation of electronics states for exploring their functionality

    Grant number:24H00480  2024.4 - 2027.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

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    Grant amount:\49140000 ( Direct Cost: \37800000 、 Indirect Cost:\11340000 )

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  • Emergent functions of transition-metal oxides with low valence and metastable structures

    Grant number:21H02026  2021.4 - 2024.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

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    Grant amount:\17290000 ( Direct Cost: \13300000 、 Indirect Cost:\3990000 )

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  • Giant magnetic response properties of double-perovskite type oxides based heterostructures

    Grant number:21F20054  2021.4 - 2023.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for JSPS Fellows

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    Grant amount:\2300000 ( Direct Cost: \2300000 )

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  • ダブルペロブスカイト型酸化物の接合界面における巨大磁気応答特性

    Grant number:20F40054  2020.11 - 2023.3

    日本学術振興会  科学研究費助成事業  特別研究員奨励費

    大友 明, SAHOO RAMCHANDRA

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    Grant amount:\2200000 ( Direct Cost: \2200000 )

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  • ダブルペロブスカイト型酸化物の接合界面における巨大磁気応答特性

    Grant number:20F02054  2020.7 - 2023.3

    日本学術振興会  科学研究費助成事業  特別研究員奨励費

    大友 明, SAHOO RAMCHANDRA

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    Grant amount:\2300000 ( Direct Cost: \2300000 )

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  • ダブルペロブスカイト型酸化物の接合界面における巨大磁気応答特性

    Grant number:20F20054  2020.4 - 2022.3

    日本学術振興会  科学研究費助成事業  特別研究員奨励費

    大友 明, SAHOO RAMCHANDRA

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    Grant amount:\2300000 ( Direct Cost: \2300000 )

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  • Creation of new transition-metal oxide thin-film superconductors by electrochemical modulation of the electronic states

    Grant number:18H03925  2018.4 - 2021.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

    Ohtomo Akira

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    Grant amount:\45500000 ( Direct Cost: \35000000 、 Indirect Cost:\10500000 )

    Superconductors are widely applied to, for example, ultralow power-consumption transportation technology and ultrasensitive sensors. In this study, we focused on transition-metal oxides that are expected to become superconductors but cannot be synthesized due to their unstable structure, and created the superconductors as expected by stabilizing them in thin-film forms. In addition, as a result of introducing carriers into superconductors electrochemically by applying the principle of lithium-ion batteries, we have clarified the unexpected and unprecedented properties of superconductors.

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  • Development of electroactive materials through the analysis of electronic phase diagrams of epitaxial transition-metal oxides

    Grant number:15H03881  2015.4 - 2018.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

    OHTOMO Akira, MATSUMOTO Yuji, KUMIGASHIRA Hiroshi, YOSHIMATSU Kohei, MASHIKO Hisanori, NAKAMURA Kentaro, KUROKAWA Hikaru, SOMA Takuto

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    Grant amount:\17940000 ( Direct Cost: \13800000 、 Indirect Cost:\4140000 )

    The transition-metal oxides, such as titania and hematite, are conventional materials utilized in various electrochemical cells because of their non-toxic, earth-abundant, and stable nature. This research aims at adding new electrochemical functionalities to them by combining the power of epitaxial growth techniques and newly developed phase-diagram analysis method. We implemented a compact electrochemical cell to test a number of thin-film samples. Representative achievements are summarized as follows: (i) band-gap narrowing in ferrite based films and orientation control of hematite films resulted in substantial improvement of visible-light driven photoelectrochemical water oxidations; (ii) complete and reversible superconductor-insulator transitions in lithium titanate films were achieved by Li-ion electrochemical reactions; (iii) superconductivity in higher titanium oxides films was discovered. Our approach is a powerful way to find new functionalities for sustainable society.

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  • Synthesis of photochemically active metal oxides having magnetic superstructures

    Grant number:24245035  2012.4 - 2015.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

    OHTOMO Akira, KUMIGASHIRA Hiroshi, FUJIMORI Jun, OSHIMA Takayoshi, YOSHIMATSU Kohei

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    Grant amount:\45240000 ( Direct Cost: \34800000 、 Indirect Cost:\10440000 )

    We have succeeded in synthesis of four new double-perovskite oxides, each of which exhibits high degree of order in the arrangements of different transition-metal atoms, to reveal their ground-state magnetic order. Also, photoanodes consisting of epitaxial films of transition-metal oxide solid-solutions have been developed to demonstrate visible-light water oxidation enhanced via metal-to-metal charge-transfers. Moreover, using electrochemical Li-ion doping technique, we have realized reversible superconductor-insulator transition in a Li-containing titanate. These studies can be recognized to bring new trend in the framework of “oxide electronics”, and further development of functional oxide materials owing to their characteristic electronic structures is expected.

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  • A study of quantized properties in transparent oxide microstructures

    Grant number:20685013  2008 - 2010

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Young Scientists (A)

    OHTOMO Akira

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    Grant amount:\26130000 ( Direct Cost: \20100000 、 Indirect Cost:\6030000 )

    Using environmentally benign transparent oxide semiconductors, we have created clean two-dimensional electron systems and succeeded in observing field-effect induced superconductivity and the fractional quantum Hall effect. These phenomena are originated from Coulomb interaction between quantized complex particles and thereby can potentially be applied for a basic element of completely new computer architectures. The materials used in this study exhibits exceptionally strong Coulomb interaction, compared with conventional semiconductors, presenting promising opportunities to find oxide semiconductors more exotic than ever in condensed matter physics.

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  • Study of ZnO based heterostructures towards realizing high-luminous efficiency ultraviolet to blue light-emitting diodes

    Grant number:18350092  2006 - 2007

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

    OHTOMO Akira

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    Grant amount:\16540000 ( Direct Cost: \15100000 、 Indirect Cost:\1440000 )

    Zinc oxide (ZnO) has been attracting increasing attentions due to their superior properties for making ultraviolet to blue light-emitting diodes (LED) since the first homoepitaxial LED was realized in 2005. Impacts of their performance are expected to span from high-luminous efficiency to low-cost and clean productivity, taking advantages of abundant source and commercially available single-crystalline substrates. This study aims at improvement of electro-luminescence (EL) efficiency of LED fabricated on conducing ZnO substrates, where vertical contact geometry can be utilized being preferable to practical application. Using molecular beam epitaxy technique, we have fabricated double-heterostructures consisting of ZnO well layers sandwiched by p-and n-type MgZnO barrier layers. As a result, highly efficient band-edge EL is realized. Thus, our study paves a way for development of commercial products. It is also an important protocol to search a transparent and metallic material to form good Ohmic contact to p-type layer. We find that a conducting polymer having a large work function has good properties as well as applicability for the use of simple spin-coating. Moreover, this polymer is found to be very useful for making Schottky contact to n-type ZnO. Nevertheless, a few technical issues such as proper analysis of hole concentration and improvement of doping efficiency of nitrogen remain to be solved in future. In other viewpoints associated with the present study, some notable achievements can be obtained; (1) observation of quantum Hall effect in MgZnO/ZnO heterostructures (published in Science, one of high-impact journals) (2) epitaxial growth of MgZnO films having record-long photoluminescence lifetime, both of which indicate state of art technology. Over all achievements can be considered remarkable and satisfactory to contents of proposal. Furthermore, basic idea, knowledge and techniques for pursuing next research subject (study of transport properties in oxide semiconductor low-dimensional structures) have been acquired through this study.

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  • 酸化物量子井戸構造を用いた発光素子及び光非線形性素子の開発

    2003 - 2006

    JST戦略的創造研究推進制度(個人研究型) (個人研究推進事業:さきがけ研究21‐PRESTO) 

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    Grant type:Competitive

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  • Exploration of oxide semiconductor quantum well structures towards light emitting and non-linear optical devices

    2003 - 2006

    JST Basic Research Programs (Precursory Research for Embryonic Science and Technology :PRESTO) 

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    Grant type:Competitive

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  • Field Effect Transistors and Ultraviolet Light Emitting Devices Based on ZnO

    2003 - 2004

    Grant-in-Aid for Scientific Research 

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    Grant type:Competitive

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  • 酸化亜鉛電界効果ドーピングと紫外発光素子

    2003 - 2004

    科学研究費補助金 

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    Grant type:Competitive

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  • Exploration of photonic electronic magnetic and their mutual functionalities in non-equilibrium and transparent oxide thin films accelerated by parallel epitaxy

    Grant number:14GS0204  2002 - 2006

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Creative Scientific Research

    KAWASAKI Masashi, KAWAZOE Yoshiyuki, FUKUMURA Tomoteru, OHTOMO Akira, MATSUKURA Fumihiro, OHTANI Keita

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    Grant amount:\572000000 ( Direct Cost: \467600000 、 Indirect Cost:\104400000 )

    After the discovery of high Tc superconductors, the research on epitaxial oxide thin films has been rapidly advanced to extend its research area to versatile functionalities such as ferroelectric, magnetic, and photonic ones. Atomic scale control of crystal growth process and heterostructures explore oxide electronics, among which oxide semiconductors play important role to realize applications that cannot be achieved by conventional semiconductors. In this research program, transparent semiconductors such as ZnO and TiO_2, are examined to donate novel photonic, electronic and magnetic functionalities through efficient parallel synthesis method. Such prototypical devices have been demonstrated as ZnO ultraviolet light emitting diodes, high mobility ZnO invisible transistors, magnetic tunnel junctions of (TiCo)_2. The followings are examples of the output. Photonic Functionality
    1. Temperature gradient method was developed as one of the parallel epitaxy method to optimize the growth conditions for making world-best intrinsic ZnO.
    2. P-type ZnO was produced for the first time by developing repeated temperature modulation technique to facilitate the incorporation and activation of nitrogen as acceptors.
    3. Ultraviolet LED was demonstrated in ZnO pn-junctions. Electronic Functionality
    4. Polycrystalline channel ZnO thin film transistors were formulated by a simulator and limiting factors of device performance were clarified.
    5. A field effect mobility of 200cm2Ns was achieved in single crystalline ZnO TFT.
    6. Quantum Hall effect was observed in oxide for the first time. Magnetic Functionality
    7. Spin polarized nature of charge carriers in TiO_2: Co was confirmed by magneto-optic and anomalous Hall effects.
    8. Magnetic tunnel junctions of TiO_2: Co was demonstrated as a first example of spin injection device of wide bandgap magnetic semiconductors.
    9. Electronic structure of TiO_2: Co was studied by first principle calculation.

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  • Optical Properties of Oxide Quantum Confinement Structures

    2002

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    Grant type:Competitive

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  • 酸化物量子閉じ込め構造の創製と光物性についての研究

    2002

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    Grant type:Competitive

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