Organization
School of Engineering Assistant Professor
Title
Assistant Professor
External link
MUNETA IRIYA
Degree
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博士(工学) ( 2014.3 東京大学 )
Research Interests
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two-dimensional layered materials
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Spintronics
Research Areas
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Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials
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Nanotechnology/Materials / Applied physical properties
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Natural Science / Magnetism, superconductivity and strongly correlated systems
Education
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The University of Tokyo The Graduate School of Engineering Department of Electrical Engineering and Information Systems
2011.4 - 2014.3
Country： Japan
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The University of Tokyo The Graduate School of Engineering Department of Electrical Engineering and Information Systems
2009.4 - 2011.3
Country： Japan
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The University of Tokyo The Faculty of Engineering Department of Electronic Engineering
2007.4 - 2009.3
Country： Japan
Professional Memberships
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The Japan Society of Applied Physics
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Institute of Electrical and Electronics Engineers (IEEE)
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The Fullerenes, Nanotubes, Graphene Research Society (FNTG)
Papers
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Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure Reviewed
Iriya Muneta, Takanori Shirokura, Pham Nam Hai, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Scientific Reports 12 15387 2022.10
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Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing Reviewed
Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Applied Physics Letters 115 ( 19 ) 192404 2019.11
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Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control Reviewed
Naoki Hayakawa, Iriya Muneta, Takumi Ohashi, Kentaro Matsuura, Jun'ichi Shimizu, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Japanese Journal of Applied Physics 57 ( 4S ) 04FP13 2018.4
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Artificial control of the bias-voltage dependence of tunnelling-anisotropic magnetoresistance using quantization in a single-crystal ferromagnet Reviewed
Iriya Muneta, Toshiki Kanaki, Shinobu Ohya, Masaaki Tanaka
Nature Communications 8 15387 2017.5
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Sudden restoration of the band ordering associated with the ferromagnetic phase transition in a semiconductor Reviewed International journal
Iriya Muneta, Shinobu Ohya, Hiroshi Terada, Masaaki Tanaka
Nature Communications 7 12013 2016.6
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Anomalous Fermi level behavior in GaMnAs at the onset of ferromagnetism Reviewed
Iriya Muneta, Hiroshi Terada, Shinobu Ohya, Masaaki Tanaka
Applied Physics Letters 103 ( 3 ) 032411 2013.7
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Spin-dependent tunneling transport in a ferromagnetic GaMnAs and un-doped GaAs double-quantum-well heterostructure Reviewed
Iriya Muneta, Shinobu Ohya, Masaaki Tanaka
Applied Physics Letters 100 ( 16 ) 162409 2012.4
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Takamasa Kawanago, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Japanese Journal of Applied Physics 64 ( 2 ) 020803 - 020803 2025.2
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Reduction of contact resistance to PVD-MoS film using aluminum-scandium alloy (AISc) edge contact
Shinya Imai, Ryosuke Kajikawa, Takamasa Kawanago, Iriya Muneta, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Kuniyuki Kakushima, Hitoshi Wakabayashi
IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024 2024
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Masaki Otomo, Masaya Hamada, Ryo Ono, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Japanese Journal of Applied Physics 62 ( SC ) SC1015 - SC1015 2023.1
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Takamasa Kawanago, Ryosuke Kajikawa, Kazuto Mizutani, Sung-Lin Tsai, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
IEEE Journal of the Electron Devices Society 11 15 - 21 2023
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Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing
Taiga Horiguchi, Takuya Hamada, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 61 ( 7 ) 2022.7
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High Seebeck coefficient in PVD-WS2 film with grain size enlargement
Takuya Hamada, Masaya Hamada, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 61 ( SC ) 2022.5
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Experimental demonstration of high-gain CMOS inverter operation at low V ( dd ) down to 0.5 V consisting of WSe2 n/p FETs
Takamasa Kawanago, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 61 ( SC ) 2022.5
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Self-aligned-TiSi2 bottom contact with APM cleaning and post-annealing for sputtered-MoS2 film
Satoshi Igarashi, Yusuke Mochizuki, Haruki Tanigawa, Masaya Hamada, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Japanese Journal of Applied Physics 60 2021.5
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ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact
Masaya Hamada, Kentaro Matsuura, Takuya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Japanese Journal of Applied Physics 60 2021.5
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Importance of crystallinity improvement in MoS2 film by compound sputtering even followed by post sulfurization
Shinya Imai, Takuya Hamada, Masaya Hamada, Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Shigetaka Tomiya, Kazuo Tsutsui, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 60 ( SB ) 2021.5
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WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box
Takuya Hamada, Masaya Hamada, Satoshi Igarashi, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 9 1117 - 1124 2021
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WS2 pMISFETs by Sputtering and Sulfur-Vapor Annealing with TiN/HfO2-Top-Gate-Stack, TiN Contact and Ultra-Thin Body and Box
Takuya Hamada, Masaya Hamada, Satoshi Igarashi, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) 2021
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Hall-effect mobility enhancement of sputtered MoS(2)film by sulfurization even through Al(2)O(3)passivation film simultaneously preventing oxidation
Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Haruki Tanigawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 59 ( 10 ) 2020.10
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Normally-off sputtered-MoS(2)nMISFETs with TiN top-gate electrode all defined by optical lithography for chip-level integration
Kentaro Matsuura, Masaya Hamada, Takuya Hamada, Haruki Tanigawa, Takuro Sakamoto, Atsushi Hori, Iriya Muneta, Takamasa Kawanago, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 59 ( 8 ) 2020.8
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Enhancement-mode accumulation capacitance-voltage characteristics in TiN/ALD-Al2O3/sputtered-MoS2 top-gated stacks
Haruki Tanigawa, Kentaro Matsuura, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 59 2020.7
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Self-heating-aware cell design for p/n-vertically-integrated nanowire on FinFET beyond 3 nm technology node
Tomohiko Yamagishi, Atsushi Hori, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Japanese Journal of Applied Physics 59 2020.4
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Control of anisotropy of a redox-active molecule-based film leads to non-volatile resistive switching memory
Jaejun Kim, Hiroyoshi Ohtsu, Taizen Den, Krittanun Deekamwong, Iriya Muneta, Masaki Kawano
CHEMICAL SCIENCE 10 ( 47 ) 10888 - 10893 2019.12
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High-Hall effect mobility of layered ZrS2 film using sputtering and sulfur vapor annealing
Hamada Masaya, Matsuura Kentaro, Muneta Iriya, Hoshii Takuya, Kakushima Kuniyuki, Kazuo Tsutsui, Wakabayashi Hitoshi
JSAP Annual Meetings Extended Abstracts 2019.2 3901 - 3901 2019.9
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Accumulation-Capacitance Characteristics of Metal-Top-Gate/High-k/Sputtered-MoS2 with Positive Threshold Voltage
Tanigawa Haruki, Matsuura Kentaro, Muneta Iriya, Hoshii Takuya, Kakushima Kuniyuki, Tsutsui Kazuo, Wakabayashi Hitoshi
JSAP Annual Meetings Extended Abstracts 2019.2 3889 - 3889 2019.9
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Normally-off sputtered-MoS<inf>2</inf> nMISFETs with MoSi<inf>2</inf> contact by sulfur powder annealing and ALD Al<inf>2</inf>O<inf>3</inf> gate dielectric for chip level integration Reviewed
K. Matsuura, M. Hamada, T. Hamada, H. Tanigawa, T. Sakamoto, W. Cao, K. Parto, A. Hori, I. Muneta, T. Kawanago, K. Kakushima, K. Tsutsui, A. Ogura, K. Banerjee, H. Wakabayashi
19th International Workshop on Junction Technology, IWJT 2019 2019.6
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High Hall-Effect Mobility of Atomic-Layered Polycrystalline-ZrS2 Film using Sputtering and Sulfur Annealing
Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
2019 Electron Devices Technology and Manufacturing Conference, EDTM 2019 194 - 196 2019.3
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Low-Temperature MoS2 Film Formation Using Sputtering and H2S Annealing
Jun'ichi Shimizu, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Nobuyuki Ikarashi, Hitoshi Wakabayashi
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 7 ( 1 ) 2 - 6 2019
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High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film Using UHV RF Magnetron Sputtering and Sulfurization
Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 7 ( 1 ) 1258 - 1263 2019
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New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment
K. Kakushima, T. Hoshii, M. Watanabe, N. Shizyo, K. Furukawa, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Y. Numasawa, A. Ogura, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai
IEEE Symposium on VLSI Circuits, Digest of Technical Papers 2018-June 105 - 106 2018.10
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Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately Reviewed
T. Hoshii, K. Furukawa, K. Kakushima, M. Watanabe, N. Shigvo, T. Saraya, T. Takakura, K. Ltou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Shinichi Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Lwai
48th European Solid-State Device Research Conference, ESSDERC 2018 2018 48th European Solid-State Device Research Conference, ESSDERC 2018 26 - 29 2018.10
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Capacitance-voltage characteristics of HfO2 MIM capacitors with Si incorporation
Iwatsuka Haruki, Hosii Takuya, Muneta Iriya, Wakabayashi Hitoshi, Tsutsui Kazuo, Kakushima Kuniyuki
JSAP Annual Meetings Extended Abstracts 2018.2 2865 - 2865 2018.9
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Transient capacitance of a MIM capacitor with CeOxlayer
Hisatsune Kazuya, Hoshii Takuya, Muneta Iriya, Wakabayashi Hitoshi, Tsutsui Kazuo, Kakushima Kuniyuki
JSAP Annual Meetings Extended Abstracts 2018.2 1871 - 1871 2018.9
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Charge and discharge characteristics of MIM capacitors with CeOx layer
Sasa Kohei, Hisatsune Kazuya, Hoshii Takuya, Muneta Iriya, Wakabayashi Hitoshi, Tsutsui Kazuo, Kakushima Kuniyuki
JSAP Annual Meetings Extended Abstracts 2018.2 2866 - 2866 2018.9
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Removal of Residual Sulfur Deposited during Sulfurization Process of Sputtered-MoS2 Film through HfO2 Film
Tanigawa Haruki, Matsuura Kentaro, Hamada Masaya, Sakamoto Takuro, Muneta Iriya, Hoshii Takuya, Kakushima Kuniyuki, Tsutsui Kazuo, Wakabayashi Hitoshi
JSAP Annual Meetings Extended Abstracts 2018.2 3719 - 3719 2018.9
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Influence of hole lifetime of n-SiC epitaxial layer on pn diode characteristics
Sasaki Kyomin, Hoshii Takuya, Muneta Iriya, Wakabayashi Hitoshi, Tsutsui Kazuo, Kakushima Kuniyuki
JSAP Annual Meetings Extended Abstracts 2018.2 2784 - 2784 2018.9
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Kentaro Matsuura, Jun'Ichi Shimizu, Mayato Toyama, Takumi Ohashi, Iriya Muneta, Seiya Ishihara, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, Hitoshi Wakabayashi
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings 104 - 106 2018.7
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Self-Heating-Effect-Free p/n-Stacked-NW on Bulk-FinFETs and 6T-SRAM Layout
Eisuke Anju, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings 346 - 348 2018.7
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Ohmic contact between titanium and sputtered MoS2 films achieved by forming-gas annealing
Mayato Toyama, Takumi Ohashi, Kentaro Matsuura, Jun'ichi Shimizu, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 57 ( 7 ) 2018.7
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Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase Sulfurization
Kentaro Matsuura, Takumi Ohashi, Iriya Muneta, Seiya Ishihara, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, Hitoshi Wakabayashi
JOURNAL OF ELECTRONIC MATERIALS 47 ( 7 ) 3497 - 3501 2018.7
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Photovoltaic properties of lateral ultra-thin Si p-i-n structure Reviewed
Suguru Tatsunokuchi, I. Muneta, T. Hoshii, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima
China Semiconductor Technology International Conference 2018, CSTIC 2018 1 - 3 2018.5
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Active-performance benchmark for advanced 3D-CMOS devices Reviewed
Hitoshi Wakabayashi, Eisuke Anju, Iriya Muneta
China Semiconductor Technology International Conference 2018, CSTIC 2018 1 - 4 2018.5
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Characterization of β-Ga2O3 Schottky barrier diodes
T. Kaneko, I. Muneta, T. Hoshii, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima
2018 18th International Workshop on Junction Technology, IWJT 2018 2018- 1 - 3 2018.4
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Low-Carrier-Density Sputter-MoS2 Film by Vapor-Phase Sulfurization
K. Matsuura, T. Ohashi, I. Muneta, S. Ishihara, K. Kakushima, K. Tsutsui, A. Ogura, H. Wakabayashi
Journal of Electrical Materials Vol. 47 ( No. 7 ) 2018.3
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3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)
K. Tsutsui, K. Kakushima, T. Hoshii, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai
Proceedings of International Conference on ASIC 2017- 1137 - 1140 2018.1
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Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film
Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Haruki Tanigawa, Takumi Ohashi, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) 2018
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Interface state density of atomic layer deposited AI2O3 on J3-Gai03
C. Y. Su, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima
ECS Transactions 85 ( 7 ) 27 - 30 2018
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Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout
Eisuke Anju, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 6 ( 1 ) 1239 - 1245 2018
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Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy
Takuro Sakamoto, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Yuuta Suzuki, Nobuyuki Ikarashi, Hitoshi Wakabayashi
2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) 2018
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Sputter-Deposited-MoS2 nMISFETs With Top-Gate and Al2O3 Passivation Under Low Thermal Budget for Large Area Integration
Kentaro Matsuura, Jun'ichi Shimizu, Mayato Toyama, Takumi Ohashi, Iriya Muneta, Seiya Ishihara, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, Hitoshi Wakabayashi
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 6 ( 1 ) 1246 - 1252 2018
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Resistive Switching Characteristics of CeOx/SiO2 with La2O3 Capping Layer
Mizutani Kazuto, Muneta Iriya, Hoshii Takuya, Wakabayashi Hitoshi, Tsutsui Kazuo, Iwai Hiroshi, Kakushima Kuniyuki
JSAP Annual Meetings Extended Abstracts 2017.2 2985 - 2985 2017.8
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A proposal of defect density extraction method for GaN epi-wafers
Kataoka Hiroaki, Hoshii Takuya, Muneta Iriya, Wakabayashi Hitoshi, Tsutsui Kazuo, Iwai Hiroshi, Kakushima Kuniyuki, Yamamoto Taiki
JSAP Annual Meetings Extended Abstracts 2017.2 3082 - 3082 2017.8
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Electrical characteristics of CeOx MIM capacitors
Takaku Yoshitaka, Muneta Iriya, Hoshii Takuya, Wakabayashi Hitoshi, Tsutsui Kazuo, Iwai Hiroshi, Kakushima Kuniyuki
JSAP Annual Meetings Extended Abstracts 2017.2 2986 - 2986 2017.8
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Electrical characteristics of Ga2O3 Schottky barrier diode with a TiN electrode
Kaneko Takashi, Muneta Iriya, Hoshii Takuya, Wakabayashi Hitoshi, Tsutsui Kazuo, Iwai Hiroshi, Kakushima Kuniyuki
JSAP Annual Meetings Extended Abstracts 2017.2 3014 - 3014 2017.8
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An electrical current test of SiC Schottky barrier diode with Mo2C electrode.
Saito Daiki, Iwai Hiroshi, Tsutsui Kazuo, Kakushima Kuniyuki, Wakabayashi Hitoshi, Hoshii Takuya, Muneta Iriya
JSAP Annual Meetings Extended Abstracts 2017.2 3488 - 3488 2017.8
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Resistivity reduction of low-carrier-density sputtered-MoS2 film using fluorine gas Reviewed
Yasunori Okada, Shimpei Yamaguchi, Takumi Ohashi, Iriya Muneta, Kuniyuki Kasushima, Kazuo Tsutsui, Hitoshi Wakabayashi
17th International Workshop on Junction Technology, IWJT 2017 44 - 46 2017.6
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High-mobility and low-carrier-density sputtered MoS2 film formed by introducing residual sulfur during low-temperature in 3%-H-2 annealing for three-dimensional ICs
Jun'ichi Shimizu, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 56 ( 4 ) 2017.4
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Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness
Takumi Ohashi, Iriya Muneta, Kentaro Matsuura, Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, Hitoshi Wakabayashi
APPLIED PHYSICS EXPRESS 10 ( 4 ) 2017.4
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High-mobility and low-carrier-density sputtered MoS
Shimizu Jun’ichi, Ohashi Takumi, Matsuura Kentaro, Muneta Iriya, Kakushima Kuniyuki, Tsutsui Kazuo, Wakabayashi Hitoshi
Jpn. J. Appl. Phys. 56 ( 4 ) 04CP06 2017.3
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Photovoltaic characteristics of lateral Si nanowall solar cells
Tatsunokuchi Suguru, Hoshii Takuya, Muneta Iriya, Wakabayashi Hitoshi, Tsutsui Kazuo, Iwai Hiroshi, Kakushima Kuniyuki
JSAP Annual Meetings Extended Abstracts 2017.1 3703 - 3703 2017.3
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Experimental verification of a 3D scaling principle for low Vce(sat) IGBT
K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai
Technical Digest - International Electron Devices Meeting, IEDM 10.6.1 - 10.6.4 2017.1
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Crystallinity Improvement using Migration-Enhancement Methods for Sputtered-MoS2 Films Reviewed
Shin Hirano, Jun'ichi Shimizu, Kentaro Matsuura, Takumi Ohashi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM) 234 - 235 2017
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Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET Reviewed
Jun'ichi Shimizu, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Nobuyuki Ikarashi, Hitoshi Wakabayashi
2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM) 222 - 223 2017
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Electronic structure near the Fermi level in the ferromagnetic semiconductor GaMnAs studied by ultrafast time-resolved light-induced reflectivity measurements
Tomoaki Ishii, Tadashi Kawazoe, Yusuke Hashimoto, Hiroshi Terada, Iriya Muneta, Motoichi Ohtsu, Masaaki Tanaka, Shinobu Ohya
PHYSICAL REVIEW B 93 ( 24 ) 2016.6
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Unveiling the impurity band induced ferromagnetism in the magnetic semiconductor (Ga,Mn)As
Masaki Kobayashi, Iriya Muneta, Yukiharu Takeda, Yoshihisa Harada, Atsushi Fujimori, Juraj Krempasky, Thorsten Schmitt, Shinobu Ohya, Masaaki Tanaka, Masaharu Oshima, Vladimir N. Strocov
PHYSICAL REVIEW B 89 ( 20 ) 2014.5
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Digging up bulk band dispersion buried under a passivation layer
Masaki Kobayashi, Iriya Muneta, Thorsten Schmitt, Luc Patthey, Sinobu Ohya, Masaaki Tanaka, Masaharu Oshima, Vladimir N. Strocov
APPLIED PHYSICS LETTERS 101 ( 24 ) 2012.12
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Valence-band structure of ferromagnetic semiconductor (In,Ga,Mn)As
Shinobu Ohya, Iriya Muneta, Yufei Xin, Kenta Takata, Masaaki Tanaka
PHYSICAL REVIEW B 86 ( 9 ) 2012.9
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Valence-Band Structure of the Ferromagnetic Semiconductor GaMnAs Studied by Spin-Dependent Resonant Tunneling Spectroscopy
Shinobu Ohya, Iriya Muneta, Pham Nam Hai, Masaaki Tanaka
PHYSICAL REVIEW LETTERS 104 ( 16 ) 2010.4
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Quantum-level control in a III-V-based ferromagnetic-semiconductor heterostructure with a GaMnAs quantum well and double barriers
Shinobu Ohya, Iriya Muneta, Masaaki Tanaka
APPLIED PHYSICS LETTERS 96 ( 5 ) 2010.2
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GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier
Shinobu Ohya, Iriya Muneta, Pham Nam Hai, Masaaki Tanaka
APPLIED PHYSICS LETTERS 95 ( 24 ) 2009.12
MISC
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TMDCを用いたFETおよびLSIについて—TMDC for FET and LSI application—2次元層状物質研究の最前線
川那子 高暢, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整
応用電子物性分科会誌 = Bulletin of solid state physics and applications / 応用物理学会応用電子物性分科会 編 30 ( 1 ) 29 - 34 2024
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Current-Voltage Characteristics of Edge Metal Contact for MoS2 Film Formed by Sputtering
今井慎也, 梶川亮介, 川那子高暢, 宗田伊理也, 角嶋邦之, 辰巳哲也, 冨谷茂隆, 筒井一生, 若林整
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 84th 2023
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30-50-nm-thick WSe2 back-channel pFETs with WOx S/D self-aligned to top gate
梶川亮介, 川那子高暢, 宗田伊理也, 星井拓也, 角嶋邦之, 筒井一生, 若林整
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 84th 2023
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Research on sputter deposition rate dependence of MoS2 film quality
今井慎也, 小野凌, 宗田伊理也, 角嶋邦之, 辰巳哲也, 冨谷茂隆, 筒井一生, 若林整
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 83rd 2022
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Low Voltage Operation of CMOS Inverter Based on WSe2 n/p FETs
川那子高暢, 松崎貴広, 梶川亮介, 宗田伊理也, 星井拓也, 角嶋邦之, 筒井一生, 若林整
電子情報通信学会技術研究報告(Web) 122 ( 84(SDM2022 24-32) ) 2022
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WSe2 n/p FET using Aluminum-Scandium (AlSc) Alloy and Tungsten Oxide (WOx) for Source/Drain Contact and its Application to CMOS Inverter
川那子高暢, 梶川亮介, 水谷一翔, TSAI SungLin, 宗田伊理也, 星井拓也, 角嶋邦之, 筒井一生, 若林整
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 83rd 2022
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Reliability improvement of Y:HfO2 capacitors by rare-earth oxides capping
水谷一翔, 星井拓也, 川那子高暢, 宗田伊理也, 若林整, 筒井一生, 角嶋邦之
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 83rd 2022
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Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs
Watanabe, Masahiro, Shigyo, Naoyuki, Hoshii, Takuya, Furukawa, Kazuyoshi, Kakushima, Kuniyuki, Satoh, Katsumi, Matsudai, Tomoko, Saraya, Takuya, Takakura, Toshihiro, Itou, Kazuo, Fukui, Munetoshi, Suzuki, Shinichi, Takeuchi, Kiyoshi, Muneta, Iriya, Wakabayashi, Hitoshi, Nakajima, Akira, Nishizawa, Shin-ichi, Tsutsui, Kazuo, Hiramoto, Toshiro, Ohashi, Hiromichi, Iwai, Hiroshi
2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) 311 - 314 2019
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少数キャリアライフタイムによる半導体プロセスの評価手法の提案
角嶋邦之, 星井拓也, 渡辺正裕, 執行直之, 古川和由, 更屋拓哉, 高倉俊彦, 伊藤一夫, 福井宗利, 鈴木慎一, 竹内潔, 宗田伊理也, 若林整, 沼沢陽一郎, 小椋厚志, 西澤伸一, 筒井一生, 平本俊郎, 大橋弘通, 岩井洋
電気学会電子・情報・システム部門大会講演論文集(CD-ROM) 2018 2018
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酸化セリウムを用いたMIMキャパシタの過渡応答特性
久恒和也, 佐々康平, 星井拓也, 宗田伊理也, 若林整, 筒井一生, 角嶋邦之
半導体・集積回路技術シンポジウム(CD-ROM) 82nd 2018
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スパッタリング法で堆積したMoS2薄膜へのコンタクト抵抗と熱処理依存性
外山真矢人, 大橋匠, 松浦賢太朗, 清水淳一, 宗田伊理也, 星井拓也, 角嶋邦之, 筒井一生, 若林整
応用物理学会春季学術講演会講演予稿集(CD-ROM) 64th 2017
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ショットキーバリアダイオードを用いたβ-Ga2O3のドナー濃度の抽出
金子喬, 宗田伊理也, 星井拓也, 若林整, 筒井一生, 岩井洋, 角嶋邦之
半導体・集積回路技術シンポジウム(CD-ROM) 81st 2017
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Mo2C電極を用いたSiCショットキーバリアダイオードのTEM解析
齋藤大樹, 宗田伊理也, 星井拓也, 若林整, 筒井一生, 岩井洋, 角嶋邦之
半導体・集積回路技術シンポジウム(CD-ROM) 81st 2017
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横型Siナノウォール太陽電池の発電特性に関する検討
龍口傑, 星井拓也, 宗田伊理也, 若林整, 筒井一生, 岩井洋, 角嶋邦之
応用物理学会春季学術講演会講演予稿集(CD-ROM) 64th 2017
Presentations
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Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulfide atomic layered structure
Iriya Muneta, Takanori Shirokura, Pham Nam Hai, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Intermag 2023 2023.5
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Sudden restoration of the band ordering at the onset of ferromagnetic transition and magnetic anisotropy control by the quantum size effect in a ferromagnetic semiconductor Invited
Iriya Muneta, Hiroshi Terada, Toshiki Kanaki, Shinobu Ohya, Masaaki Tanaka
62nd Annual Conference on Magnetism and Magnetic Materials 2017.11
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微結晶MoS2膜への硫黄雰囲気アニールによる結晶性向上
小野 凌, 今井 慎也, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整
第83回応用物理学会秋季学術講演会 2022.9
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アルミニウムスカンジウム合金(AlSc)と酸化タングステン(WOx)をソース/ドレイン電極に用いたWSe2 n/p FETとCMOSインバータ応用
川那子 高暢, 梶川 亮介, 水谷 一翔, Tsai Sung Lin, 宗田 伊理也, 星井 拓也, 角嶋 邦之, 筒井 一生, 若林 整
第83回応用物理学会秋季学術講演会 2022.9
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希土類酸化物キャッピングによるY:HfO2キャパシタの信頼性改善
水谷 一翔, 星井 拓也, 川那子 高暢, 宗田 伊理也, 若林 整, 筒井 一生, 角嶋 邦之
第83回応用物理学会秋季学術講演会 2022.9
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アニール処理によるWS2-Niエッジコンタクト特性の向上
立松 真一, 濱田 昌也, 濱田 拓也, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整
第83回応用物理学会秋季学術講演会 2022.9
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MoS2膜質のスパッタ成膜レート依存性調査
今井 慎也, 小野 凌, 宗田 伊理也, 角嶋 邦之, 辰巳 哲也, 冨谷 茂隆, 筒井 一生, 若林 整
第83回応用物理学会秋季学術講演会 2022.9
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Ni/Al2O3/スパッタWS2コンタクトの電流電圧特性
Kaede Teraoka, Shinya Imai, Keita Kurohara, Soma Ito, Takamasa Kawanago, Iriya Muneta, Kuniyuki KAKUSHIMA, Hitoshi Wakabayashi
The 84th JSAP Autumn meeting 2023.9
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MoS2極薄膜における磁化特性の層数依存性
岡村 俊吾, 宗田 伊理也, 白倉 孝典, 若林 整
第84回応用物理学会秋季学術講演会 2023.9
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トップゲートに自己整合したWOx S/Dを用いた30-50 nm膜厚WSe2バックチャネルpFET
Ryosuke Kajikawa, Takamasa Kawanago, Iriya Muneta, Takuya Hoshii, Kuniyuki KAKUSHIMA, KAZUO TSUTSUI, Hitoshi Wakabayashi
The 84th JSAP Autumn meeting 2023.9
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スパッタMoS2膜に対するエッジ金属コンタクトの電流電圧特性
Shinya Imai, Ryosuke Kajikawa, Takamasa Kawanago, Iriya Muneta, Kuniyuki KAKUSHIMA, Tetsuya Tatsumi, Shigetaka Tomiya, KAZUO TSUTSUI, Hitoshi Wakabayashi
The 84th JSAP Autumn meeting 2023.9
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スパッタ成膜MoS2の基板上での原子分解能電子顕微鏡観察
Takashi Takeda, Ryo Ono, Yuta Kusama, Eri Kano, Iriya Muneta, Hitoshi Wakabayashi, Nobuyuki Ikarashi
The 84th JSAP Autumn meeting 2023.9
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ZrS2 symmetrical-ambipolar FETs with near-midgap TiN film for both top-gate electrode and Schottky-barrier contact Invited
濱田 昌也, 松浦 賢太朗, 濱田 拓也, 宗田 伊理也, 角嶋 邦之, 筒井 一生, 若林 整
第70回応用物理学会春季学術講演会 2023.3
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Self-heating and Short-Channel Effect Immunity with Partial-Bottom-Dielectric-Isolation for Gate-All-Around Nano-Sheet FETs
Peilong Wang, Atsushi Hori, Iriya Muneta, Takamasa Kawanago, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
70th JSAP Spring meeting 2023.3
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Grain-Size Enlargement of MoS2 Film by Low-Rate Sputtering with Molybdenum Grid
Shinya Imai, Ryo Ono, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Shigetaka Tomiya, Kazuo Tsutsui, Hitoshi Wakabayashi
IEEE Electron Devices Technology and Manufacturing Conference (EDTM) 2023.3
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Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film
Ryo Ono, Shinya Imai, Takamasa Kawanago, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi
IEEE Electron Devices Technology and Manufacturing Conference (EDTM) 2023.3
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強磁性を示す二次元多結晶層状物質MoS2における非対称線形磁気抵抗
宗田 伊理也, 白倉 孝典, ファム ナムハイ, 角嶋 邦之, 筒井 一生, 若林 整
第83回応用物理学会秋季学術講演会 2022.9
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Ferromagnetism and current control of magnetoresistance in two-dimensional polycrystalline MoS2
宗田 伊理也, 白倉 孝典, PHAM NAM HAI, 角嶋 邦之, 筒井 一生, 若林 整
第63回フラーレン・ナノチューブ･グラフェン総合シンポジウム 2022.8
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二次元多結晶二硫化モリブデン原子層状膜における超低電流強磁性変調
宗田 伊理也, 白倉 孝典, ファム ナム ハイ, 角嶋 邦之, 筒井 一生, 若林 整
第69回応用物理学会春季学術講演会 2022.3
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Grain Size Enlargement in 2D WS2 Film with Low-Power RF-Magnetron Sputtering
Takuya Hamada, Taiga Horiguchi, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi
International Conference on Solid State Devices and Materials 2021.9
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Experimental Demonstration of High-Gain CMOS Inverter at Low Vdd Down to 0.5 V Consisting of WSe2 n/p FETs
Takamasa Kawanago, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
International Conference on Solid State Devices and Materials 2021.9
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Growth Mechanism of PVD MoS2 Film from Sub-Monolayer Region
Ryo Ono, Shinya Imai, Yuta Kusama, Takuya Hamada, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Nobuyuki Ikarashi, Hitoshi Wakabayashi
International Conference on Solid State Devices and Materials 2021.9
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Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices Invited
Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai
IEEE 5th Electron Devices Technology and Manufacturing Conference (EDTM 2021) 2021.4
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Demonstration of High Gain WSe2 CMOS Inverter operating at Vdd of 0.5 V
川那子高暢, 松崎貴広, 梶川亮介, 宗田伊理也, 星井拓也, 角嶋邦之, 筒井一生, 若林整
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 2021
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ZrS2 Ambipolar FETs with Schottky Barrier to Near-Midgap TiN Contact Controlled by Top Gate TiN/Al2O3 Stack
Masaya Hamada, Kentaro Matsuura, Takuya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
International Conference of Solid State Devices and Materials (SSDM) 2020.9
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Low Contact Resistance at Interface between Sputtered-MoS2 Film and TiSi2 Contact Treated by Higher-Temperature Forming-Gas Annealing
Satoshi Igarashi, Yusuke Mochiduki, Haruki Tanigawa, Masaya Hamada, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
International Conference of Solid State Devices and Materials (SSDM) 2020.9
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Importance of MoS2-Compound Sputtering even with Sulfur-Vapor Anneal for Chip-Size Fabrication
Shinya Imai, Takuya Hamada, Masaya Hamada, Takanori Shirokura, Shigetaka Tomiya, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Kazuo Tsutsui, Hitoshi Wakabayashi
International Conference of Solid State Devices and Materials (SSDM) 2020.9
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Normally-off Sputtered MoS2-nMISFETs for Large Scale Integration
Kentaro Matsuura, Masaya Hamada, Takuya Hamada, Haruki Tanigawa, Takuro Sakamoto, Atsushi Hori, Iriya Muneta, Takamasa Kawanago, Kuniyuki Kakushima, Kazuo Tsutsui, Ogura Atsushi, Hitoshi Wakabayashi
The 67th JSAP Spring Meeting 2020.3
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Edge induced ferromagnetism in sputtered MoS2 film controlled by annealing
Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
The 80th JSAP Autumn meeting 2019.9
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Normally-off sputtered-MoS<inf>2</inf> nMISFETs with MoSi<inf>2</inf> contact by sulfur powder annealing and ALD Al<inf>2</inf>O<inf>3</inf> gate dielectric for chip level integration
K. Matsuura, M. Hamada, T. Hamada, H. Tanigawa, T. Sakamoto, W. Cao, K. Parto, A. Hori, I. Muneta, T. Kawanago, K. Kakushima, K. Tsutsui, A. Ogura, K. Banerjee, H. Wakabayashi
19th International Workshop on Junction Technology, IWJT 2019 2019.6
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Mechanism for high hall-effect mobility in sputtered-MoS2 film controlling particle energy
Takuro Sakamoto, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Yuuta Suzuki, Nobuyuki Ikarashi, Hitoshi Wakabayashi
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018 2019.2
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Hall-effect mobility enhancement of sputtered MoS2 film by vapor phase sulfurization through Al<inf>2</inf>O<inf>3</inf> passivation film
Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Haruki Tanigawa, Takumi Ohashi, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2018 2019.2
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Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs
Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Toshihiro Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai
2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) 2019
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Magnetic property in sputtered MoS2 thin film on growth temperature
Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
2018.12
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New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment
K. Kakushima, T. Hoshii, M. Watanabe, N. Shizyo, K. Furukawa, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Y. Numasawa, A. Ogura, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai
IEEE Symposium on VLSI Circuits, Digest of Technical Papers 2018.10
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Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately
T. Hoshii, K. Furukawa, K. Kakushima, M. Watanabe, N. Shigvo, T. Saraya, T. Takakura, K. Ltou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Shinichi Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Lwai
48th European Solid-State Device Research Conference, ESSDERC 2018 2018 48th European Solid-State Device Research Conference, ESSDERC 2018 2018.10
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Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS<inf>2</inf> Thin Channel Passivated by Al<inf>2</inf>O<inf>3</inf> Film and TiN Top Gate
Kentaro Matsuura, Jun'Ichi Shimizu, Mayato Toyama, Takumi Ohashi, Iriya Muneta, Seiya Ishihara, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, Hitoshi Wakabayashi
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings 2018.7
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Active-performance benchmark for advanced 3D-CMOS devices
Hitoshi Wakabayashi, Eisuke Anju, Iriya Muneta
China Semiconductor Technology International Conference 2018, CSTIC 2018 2018.5 Institute of Electrical and Electronics Engineers Inc.
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Photovoltaic properties of lateral ultra-thin Si p-i-n structure
Suguru Tatsunokuchi, I. Muneta, T. Hoshii, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima
China Semiconductor Technology International Conference 2018, CSTIC 2018 2018.5 Institute of Electrical and Electronics Engineers Inc.
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Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy
Takuro Sakamoto, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Yuuta Suzuki, Nobuyuki Ikarashi, Hitoshi Wakabayashi
2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) 2018
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Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate
Kentaro Matsuura, Jun'ichi Shimizu, Mayato Toyama, Takumi Ohashi, Iriya Muneta, Seiya Ishihara, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, Hitoshi Wakabayashi
2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018) 2018
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Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film
Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Haruki Tanigawa, Takumi Ohashi, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) 2018
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Resistivity reduction of low-carrier-density sputtered-MoS<inf>2</inf> film using fluorine gas
Yasunori Okada, Shimpei Yamaguchi, Takumi Ohashi, Iriya Muneta, Kuniyuki Kasushima, Kazuo Tsutsui, Hitoshi Wakabayashi
17th International Workshop on Junction Technology, IWJT 2017 2017.6
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Low temperature ohmic contact for p-type GaN using Mg electrodes
K. Kakushima, Y. Ikeuchi, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, T. Kikuchi, S. Ishikawa
17th International Workshop on Junction Technology, IWJT 2017 2017.6 Institute of Electrical and Electronics Engineers Inc.
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K. Kakushima, T. Suzuki, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, H. Nohira
17th International Workshop on Junction Technology, IWJT 2017 2017.6
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Crystallinity improvement using migration-enhancement methods for sputtered-MoS<inf>2</inf> films
Shin Hirano, Jun'Ichi Shimizu, Kentaro Matsuura, Takumi Ohashi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings 2017.6
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Low-carrier density sputtered-MoS<inf>2</inf> film by H<inf>2</inf>S annealing for normally-off accumulation-mode FET
Jun'Ichi Shimizu, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Nobuyuki Ikarashi, Hitoshi Wakabayashi
2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings 2017.6
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Experimental verification of a 3D scaling principle for low Vce(sat) IGBT
K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai
Technical Digest - International Electron Devices Meeting, IEDM 2017.1 Institute of Electrical and Electronics Engineers Inc.
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Resistivity Reduction of Low-Carrier-Density Sputtered-MoS2 Film using Fluorine Gas
Yasunori Okada, Shimpei Yamaguchi, Takumi Ohashi, Iriya Muneta, Kuniyuki Kasushima, Kazuo Tsutsui, Hitoshi Wakabayashi
2017 17TH INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) 2017
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Crystallinity Improvement using Migration-Enhancement Methods for Sputtered-MoS2 Films
Shin Hirano, Jun'ichi Shimizu, Kentaro Matsuura, Takumi Ohashi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM) 2017
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3D Scaling for Insulated Gate Bipolar Transistors (IGBTs) with Low V-ce(sat)
K. Tsutsui, K. Kakushima, T. Hoshii, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai
2017 IEEE 12TH INTERNATIONAL CONFERENCE ON ASIC (ASICON) 2017
Awards
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Reserach Promotion Award
2018.3 The Japan Society of Applied Physics, Silicon Technology Division
Research Projects
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Electrical control of 4d-orbital edge ferromagnetism in two-dimensional semiconductor MoS2
Grant number：24K07557 2024.4 - 2027.3
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research(C)
Iriya Muneta
Authorship：Principal investigator
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Electrical control of ferromagnetism with narrow gap Hubbard band
Grant number：KJ-3313 2024.4 - 2025.3
Kato Foundation for Promotion of Science Promotion of Science
Iriya Muneta
Authorship：Principal investigator
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Ferromagnetism and its application of transition-metal chalcogenide 2D-layered polycrystal
Grant number：21K14193 2021.4 - 2024.3
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Early-Career Scientists Grant-in-Aid for Early-Career Scientists
Iriya Muneta
Authorship：Principal investigator
Grant amount：\4680000 （ Direct Cost: \3600000 、 Indirect Cost：\1080000 ）
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二次元層状物質遷移金属カルコゲナイドの磁化特性と電気伝導特性
Grant number：KJ20050048 2020.4 - 2022.3
みずほ学術振興財団 工学研究助成
宗田 伊理也
Authorship：Principal investigator
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二次元層状物質における強磁性と磁気伝導特性の解明
Grant number：0311055-A 2019.4 - 2020.3
池谷科学技術振興財団 単年度研究助成
宗田 伊理也
Authorship：Principal investigator
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Doping-free ferromagnetic semiconductor based on 2D layered materials
Grant number：18K13785 2018.4 - 2021.3
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Early-Career Scientists
Muneta Iriya
Authorship：Principal investigator
Grant amount：\4160000 （ Direct Cost: \3200000 、 Indirect Cost：\960000 ）
Ferromagnetic semiconductors are made by doping magnetic impurities in semiconductors. To get high Curie temperature materials, high density of magnetic impurities is necessary. However, this loses electron mobility. Transition-metal chalcogenide MoS2 is expected to be a next generation semiconductor beyond silicon, and it is known that poly-crystalline grain boundary and defects in lattice structures result in the showing of ferromagnetism. Thus, poly-crystalline MoS2 is anticipated to be a doping-free ferromagnetic semiconductor. In this study, I successfully formed poly-crystalline MoS2 thin layer by sputtering, and conformed the formation of the atomic-scale layered structure in MoS2. Moreover, magnetization measurement was performed and large saturation magnetization was successfully observed in the poly-crystalline MoS2 thin layer.
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Self-Heating-Effect-Free p/n-Stacked-NW/Bulk-FinFETs and 6T-SRAM
Grant number：18K04258 2018.4 - 2021.3
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C) Grant-in-Aid for Scientific Research (C)
Hitoshi Wakabayashi
Authorship：Coinvestigator(s)
Grant amount：\4420000 （ Direct Cost: \3400000 、 Indirect Cost：\1020000 ）
For MOSFET technology for ultra-low power consumption LSI, miniaturization by nano-wire (NW) structure is effective. However, the decrease in drive current due to self-heating effect is a problem, and it is effective to realize a heat dissipation path (recess contact) leading to the substrate by stacked NW on FinFETs. Therefore, we clarified the self-heating effect suppression and area reduction effect for Inverter, Transfer gate, NOR, NAND, multi-input NOR / NAND, and SRAM by p/n-stacked NW/FinFETs. Next, although the self-heating effect is more serious in NOR than in NAND, but it was clarified that the drive current is able to be maintained up to 5 inputs.
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強磁性半導体ＧａＭｎＡｓにおけるバンド構造と強磁性
Grant number：13J08851 2013.4 - 2015.3
日本学術振興会 科学研究費助成事業 特別研究員奨励費 特別研究員奨励費
宗田 伊理也
Authorship：Principal investigator
Grant amount：\2530000 （ Direct Cost: \2200000 、 Indirect Cost：\330000 ）
電子は電荷の自由度を持つと同時にスピン自由度を持ち、これらは結合している。したがって、電荷の自由度を操作し電子構造を制御するバンドエンジニアリングは、スピンに由来する磁性をも制御可能であることが期待される。本研究では、強磁性半導体GaMnAsを電極にしたトンネル接合素子において、量子サイズ効果によって価電子帯の正孔の波動関数を変調しながら、トンネル輸送特性の磁化方向依存性を測定した。トンネル接合は、分子線エピタキシー法を用いて作製した。GaMnAsの膜厚に傾斜をつけることで、同一のウェーハー上に井戸幅の異なるトンネル接合素子の列を作製し、量子サイズ効果が素子ごとに異なるようにした。外部から磁場を印加し、印加する方向を変えることで磁化方向を制御した。トンネルコンダクタンスの磁化方向依存性を測定した結果、その対称性が井戸幅によって異なることが分かった。井戸幅が広く、量子サイズ効果が生じない場合におけるトンネルコンダクタンスの磁化方向依存性は、二回対称であった。井戸幅が狭く、量子サイズ効果が生じる場合は、四回対称であった。これらの結果が示していることは、量子サイズ効果を利用してバンド構造および波動関数という電子の電荷の性質をエンジニアリングすることで、トンネルコンダクタンスの磁化方向依存性という磁気的な性質を変化させることが出来るということである。磁性材料の組成を変える従来の方法とは異なり、組成を変えずに電子構造を変えることによって磁性を設計するという新しい方法の確立が期待される。この方法は、次世代機能性スピンデバイスの実現に繋がる。