Organization
School of Engineering Professor
Title
Professor
External link
NISHIYAMA NOBUHIKO
News & Topics
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全光ニューラルネットワーク回路用の活性化関数素子を実現 シリコン基板上低消費電力半導体薄膜レーザで実証
2022/12/02
Languages： Japanese
要点 シリコン上に集積可能な光活性化関数（ReLU）素子を実証 低消費電力半導体薄膜レーザを作製し、光と電気のハイブリッド駆動でReLU関数を実現 人工知能に向けたワンチップ全光ニューラルネットワーク回路を実現する光集積回路へ道を開く 概要東京工業大学 工学院 電気電子系の西山伸彦教授、高橋直樹大学院生と、科学技術創成研究院 未来産業技術研究所の雨宮智宏助教らの研究チームは、シリコン基板
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シリコン基板の上に半導体レーザ―150℃の低温で異なる基板を接合、大規模光集積回路に道―
2016/05/11
Languages： Japanese
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Lasers on silicon: Low temperature heterogeneous integration without glue
2016/05/11
Languages： English
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シリコン光3次元配線による毎秒50ギガビット信号伝送を実現－LSI電子回路チップ内超高速光伝送が可能に－
2013/09/05
Languages： Japanese
【要点】○電子集積回路と同じ材料、互換プロセスでシリコン3次元光配線を実現○毎秒50ギガ(500億)ビットを高効率に伝送○電子集積回路と光配線を一括集積することでシステムの性能を向上【概要】東京工業大学大学院理工学研究科の姜晙炫大学院生と西山伸彦准教授、同大学量子ナノエレクトロニクス研究センターの荒井滋久教授らの研究グループは、電子大規模集積回路(LSI)で一般的なシリコン材料と同じプロセスを利用して、3次元光多層配線を作製し、複数配線層間で毎秒50ギガ（500億）ビットの高効率な信号伝送に成功した。配線内に回折格子に加えて高反射ミラーを導入することにより、同研究グループの従来の結果に比べ3倍以上となる多層間伝送での80%以上の信号強度を維持することに成功し、安定した高速信号伝送を初めて可能とした。
Degree
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Doctor of Engineering ( Tokyo Institute of Technology )
Research Interests
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Photonics
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Quantum Electronics
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量子エレクトロニクス
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フォトニクス
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光ネットワーク
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光デバイス
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Optical Networks
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Optical Devices
Research Areas
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Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Communication and network engineering
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Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment
Education
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Tokyo Institute of Technology Interdisciplinary Science and Engineering Information Processing
- 2001
Country： Japan
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Tokyo Institute of Technology Graduate School, Division of Integrated Science and Engineering Department of Information Processing
- 2001
Research History
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Tokyo Institute of Technology Professor
2020.4
Country：Japan
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:コーニングインコーポレーティド サイエンス アンド テクノロジー リサーチアソシエート
2001 - 2006
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:Corning Incorporated Science and Technology Research Associate
2001 - 2006
Professional Memberships
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応用物理学会
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Japanese Society of Applied Physics
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IEEE
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IEEE
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電子情報通信学会
Committee Memberships
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電子情報通信学会東京支部委員
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電子情報通信学会シリコン・フォトニクス時限研究委員会幹事(H20-)
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IEEE LEOS Japan Chapter幹事 (H19-H20)
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JJAP編集委員 (H19-)
Papers
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Wafer and chip-level characterization of edge-coupled photonic integrated circuits by cascaded grating couplers and spot-size converters
Moataz Eissa, Ryuya Sasaki, Tsuyoshi Horikawa, Tomohiro Amemiya, Nobuhiko Nishiyama
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 63 ( 7 ) 2024.7
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Precise waveguide loss extraction using 300-mm wafer-level OFDR for optical process control monitoring
Tsuyoshi Horikawa, Atsushi Kitamura, Masanori Yatani, Nobuhiko Nishiyama
2024 IEEE SILICON PHOTONICS CONFERENCE, SIPHOTONICS 2024
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Peak Frequency Control of Photon-Photon Resonance GaInAsP Membrane DR Lasers on Si with Rear-Side Spacer Waveguide
N. Takahashi, S. Yoshida, Y. Oiso, T. Horikawa, K. Tsutsui, K. Nishimura, S. Nimura, H. Takahashi, M. Suzuki, N. Nishiyama
Conference Digest - IEEE International Semiconductor Laser Conference 2024
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Deep learning improves performance of topological bending waveguides
Sakamoto, I., Okada, S., Nishiyama, N., Hu, X., Amemiya, T.
Optics Express 32 ( 2 ) 2024
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Monolithic integration of various-type III-V epitaxial structures on silicon-photonics platform using chip-on-wafer hydrophilic bonding process
Takehiko Kikuchi, Munetaka Kurokawa, Naoki Fujiwara, Naoko Inoue, Takuya Mitarai, Hidenari Fujikata, Takuo Hiratani, Toshiyuki Nitta, Yuhki Itoh, Tohma Watanabe, Chang-Yong Lee, Akira Furuya, Tsuyoshi Horikawa, Nobuhiko Nishiyama, Hideki Yagi
2024 IEEE SILICON PHOTONICS CONFERENCE, SIPHOTONICS 2024
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Coupling structure for enabling both wafer- and chip-level characterization of silicon photonic integrated circuits
Moataz Eissa, Ryuya Sasaki, Tsuyoshi Horikawa, Tomohiro Amemiya, Nobuhiko Nishiyama
2024 IEEE SILICON PHOTONICS CONFERENCE, SIPHOTONICS 2024
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Extraction of Reflection Coefficient in Silicon Waveguides using Multiple Reflection Signals in OFDR
Tsuyoshi Horikawa, Atsushi Kitamura, Masanori Yatani, Nobuhiko Nishiyama
CLEO: Applications and Technology, CLEO: A and T 2024 in Proceedings CLEO 2024 - Part of Conference on Lasers and Electro-Optics 2024
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Eissa, M., Kikuchi, T., Oiso, Y., Amemiya, T., Nishiyama, N.
Japanese Journal of Applied Physics 62 ( 1 ) 2023.1
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Demonstration of a highly efficient topological vertical coupler
Okada, S., Kagami, H., Nishiyama, N., Hu, X., Amemiya, T.
Optics Express 31 ( 21 ) 2023
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Inverse Design of Low Back Reflection Grating Coupler
Yuduan Wang, Tsuyoshi Horikawa, Yoshitaka Ohiso, Tomohiro Amemiya, Nobuhiko Nishiyama
JSAP-Optica Joint Symposia in Proceedings JSAP-Optica Joint Symposia 2023 Abstracts, JSAP 2023 2023
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Kikuchi, T., Kurokawa, M., Fujiwara, N., Inoue, N., Hiratani, T., Nitta, T., Mitarai, T., Itoh, Y., Lee, C.-Y., Furuya, A., Oiso, Y., Nishiyama, N., Yagi, H.
Japanese Journal of Applied Physics 62 ( 12 ) 2023
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High-speed modulation in a waveguide magneto-optical switch with impedance-matching electrode
Yajima, S., Nishiyama, N., Shoji, Y.
Optics Express 31 ( 10 ) 2023
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High-temperature and high-efficiency operation of a membrane optical link with a buried-ridge-waveguide bonded on a Si substrate. International journal
Weicheng Fang, Naoki Takahashi, Tsuyoshi Horikawa, Yoshitaka Ohiso, Ruihao Xue, Shunto Katsumi, Tomohiro Amemiya, Nobuhiko Nishiyama
Optics express 30 ( 19 ) 34420 - 34428 2022.9
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High-speed infrared photonic band microscope using hyperspectral Fourier image spectroscopy. International journal
Tomohiro Amemiya, Sho Okada, Hibiki Kagami, Nobuhiko Nishiyama, Yuanzhao Yao, Kazuaki Sakoda, Xiao Hu
Optics letters 47 ( 10 ) 2430 - 2433 2022.5
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Design and characteristics of reflectivity tunable mirror with MZI and loop waveguide on SOI
Makihara, Y., Eissa, M., Amemiya, T., Nishiyama, N.
Japanese Journal of Applied Physics 61 2022.5
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Kikuchi, T., Hiratani, T., Fujiwara, N., Inoue, N., Nitta, T., Eissa, M., Mitarai, T., Wang, Y., Oiso, Y., Nishiyama, N., Yagi, H.
Japanese Journal of Applied Physics 61 ( 5 ) 2022.5
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Selective excitation of optical vortex modes with specific charge numbers in band-tuned topological waveguides. International journal
Hibiki Kagami, Tomohiro Amemiya, Sho Okada, Yahui Wang, Nobuhiko Nishiyama, Xiao Hu
Optics letters 47 ( 9 ) 2190 - 2193 2022.5
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Fang, W., Takahashi, N., Ohiso, Y., Amemiya, T., Nishiyama, N.
IEEE Journal of Quantum Electronics 58 ( 2 ) 1 - 8 2022.4
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Special Issue on Advanced Ultra-High Speed Optoelectronic Devices
Shi, J.-W., Beling, A., Nishiyama, N.
Photonics 9 ( 5 ) 2022
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High Temperature Operation of Membrane Photonic Integrated Circuits with Buried-Ridge-Waveguide on Si
Weicheng Fang, Naoki Takahashi, Tsuyoshi Horikawa, Yoshitaka Ohiso, Ruihao Xue, Shunto Katsumi, Tomohiro Amemiya, Nobuhiko Nishiyama
Conference Digest - IEEE International Semiconductor Laser Conference 2022-October 2022
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Okada, S., Amemiya, T., Kagami, H., Wang, Y., Nishiyama, N., Hu, X.
Journal of the Optical Society of America B: Optical Physics 39 ( 9 ) 2022
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Optical ReLU using membrane lasers for an all-optical neural network
Takahashi, N., Fang, W., Xue, R., Okada, S., Ohiso, Y., Amemiya, T., Nishiyama, N.
Optics Letters 47 ( 21 ) 2022
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Lateral confinement enhanced membrane laser on Si with a buried-ridge-waveguide structure
Naoki Takahashi, Weicheng Fang, Yoshitaka Ohiso, Tomohiro Amemiya, Nobuhiko Nishiyama
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS 38 ( 11 ) 3340 - 3345 2021.11
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Highly efficient vertical coupling to a topological waveguide with defect structure. International journal
Hibiki Kagami, Tomohiro Amemiya, Sho Okada, Nobuhiko Nishiyama, Xiao Hu
Optics express 29 ( 21 ) 32755 - 32763 2021.10
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On-Silicon Photonic Integrated Circuit toward On-chip Interconnection and Distributed Computing
Nobuhiko Nishiyama, Tomohiro Amemiya
IEEE Symposium on VLSI Circuits, Digest of Technical Papers 2021- 2021.6
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Lateral Optical Confinement Enhanced GaInAsP Membrane Laser on Si for On-chip Optical Interconnection
Naoki Takahashi, Weicheng Fang, Yoshitaka Ohiso, Tomohiro Amemiya, Nobuhiko Nishiyama
27TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2021) 2021
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Eissa, M., Mitarai, T., Amemiya, T., Miyamoto, Y., Nishiyama, N.
Japanese Journal of Applied Physics 59 ( 12 ) 126502 - 126502 2020.12
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Murai, T., Shoji, Y., Nishiyama, N., Mizumoto, T.
IEICE Transactions on Electronics E103.C ( 11 ) 645 - 652 2020.11
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Mitarai, T., Moataz, E., Miyazaki, T., Amemiya, T., Nishiyama, N.
Japanese Journal of Applied Physics 59 ( 11 ) 112002 - 112002 2020.11
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Topological converter for high-efficiency coupling between Si wire waveguide and topological waveguide. International journal
Hibiki Kagami, Tomohiro Amemiya, Shou Okada, Nobuhiko Nishiyama, Xiao Hu
Optics express 28 ( 22 ) 33619 - 33631 2020.10
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Nonvolatile magneto-optical switches integrated with a magnet stripe array
Murai, T., Shoji, Y., Nishiyama, N., Mizumoto, T.
Optics Express 28 ( 21 ) 31675 - 31675 2020.10
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Control of slow-light effect in a metamaterial-loaded Si waveguide
Makoto Tanaka, Tomohiro Amemiya, Hibiki Kagami, Nobuhiko Nishiyama, Shigehisa Arai
OPTICS EXPRESS 28 ( 16 ) 23198 - 23208 2020.8
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High-quality, room-temperature, surface-activated bonding of GaInAsP/InP membrane structure on silicon
Weicheng Fang, Naoki Takahashi, Yoshitaka Ohiso, Tomohiro Amemiya, Tomohiro Amemiya, Nobuhiko Nishiyama, Nobuhiko Nishiyama
Japanese Journal of Applied Physics 59 ( 6 ) 2020.7
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Magneto-Optical Isolator and Self-Holding Optical Switch Integrated with Thin-Film Magnet
Toshiya Murai, Yuya Shoji, Nobuhiko Nishiyama, Tetsuya Mizumoto
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 2020- 2020.5
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Optical Vortex Beam Splitter using Topological Edge State Waveguide
Sho Okada, Tomohiro Amemiya, Hibiki Kagami, Koichi Saito, Makoto Tanaka, Nobuhiko Nishiyama, Xiao Hu
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 2020- 2020.5
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1020-nm-Band Optical Cloak using Double-Layered Metamaterial Film
Tomohiro Amemiya, Hibiki Kagami, Makoto Tanaka, Sho Okada, Nobuhiko Nishiyama, Mayu Takagi, Tatsuhiro Urakami
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS 2020- 2020.5
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High-quality InP/SOI heterogeneous material integration by room temperature surface-activated bonding for hybrid photonic devices
Yuning Wang, Kumi Nagasaka, Takuya Mitarai, Yoshitaka Ohiso, Tomohiro Amemiya, Nobuhiko Nishiyama
JAPANESE JOURNAL OF APPLIED PHYSICS 59 ( 5 ) 2020.5
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Enhanced bonding strength of InP/Si chip-on-wafer by plasma-activated bonding using stress-controlled interlayer
Takehiko Kikuchi, Liu Bai, Takuya Mitarai, Hideki Yagi, Masato Furukawa, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
Japanese Journal of Applied Physics 59 2020.2
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Continuous-wave operation of a 1.3 μm wavelength npn AlGaInAs/InP transistor laser up to 90 °c
Yoshitomi, S., Yamanaka, K., Goto, Y., Yokomura, Y., Nishiyama, N., Arai, S.
Japanese Journal of Applied Physics 59 ( 4 ) 2020
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Metamaterial infrared refractometer for determining broadband complex refractive index. International journal
Hibiki Kagami, Tomohiro Amemiya, Makoto Tanaka, Yuning Wang, Nobuhiko Nishiyama, Shigehisa Arai
Optics express 27 ( 20 ) 28879 - 28890 2019.9
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Broadband Si waveguide loop mirror with curved directional coupler
Takuya Mitarai, Moataz Eissa, Takayuki Miyazaki, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019 2019.7
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Murai, T., Shoji, Y., Nishiyama, N., Mizumoto, T.
Japanese Journal of Applied Physics 58 ( 7 ) 072006 - 072006 2019.7
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Magneto-Optical Microring Switch of Amorphous Silicon Waveguide on Garnet
Toshiya Murai, Yuya Shoji, Nobuhiko Nishiyama, Tetsuya Mizumoto
OECC/PSC 2019 - 24th OptoElectronics and Communications Conference/International Conference Photonics in Switching and Computing 2019 2019.7
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Demonstration of slow-light effect in silicon-wire waveguides combined with metamaterials. International journal
Tomohiro Amemiya, Satoshi Yamasaki, Makoto Tanaka, Hibiki Kagami, Keisuke Masuda, Nobuhiko Nishiyama, Shigehisa Arai
Optics express 27 ( 10 ) 15007 - 15017 2019.5
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High Yield Chip-on-wafer Low Temperature Plasma Activated Bonding for III-V/Si Hybrid Photonic Integration
Takehiko Kikuchi, Liu Bai, Takuya Mitarai, Hideki Yagi, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 8 2019.5
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Orbital Angular Momentum Mux/Demux Module using Vertically Curved Si Waveguides
Tomohiro Amemiya, Tomoya Yoshida, Yuki Atsumi, Nobuhiko Nishiyama, Yasuyuki Miyamoto, Youichi Sakakibara, Shigehisa Arai
2019 Optical Fiber Communications Conference and Exhibition, OFC 2019 - Proceedings 2019.4
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Design of GaInAs/InP membrane p-i-n photodiodes with back-end distributed Bragg reflector
Xu Zheng, Tomohiro Amemiya, Zhichen Gu, Koichi Saito, Nobuhiko Nishiyama, Shigehisa Arai
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS 36 ( 4 ) 1054 - 1061 2019.4
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Investigation of Photoluminescence property of InP/SOI wafer after bonding experiment using Surface Activated Bonding based on Fast Atom Beam
Yuning Wang, Moataz Eissa, Takuya Mitarai, Tomohiro Amemiya, Nobuhiko Nishiyama
Optics InfoBase Conference Papers 2019 2019
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Investigation of InP/Si bonding condition for optimizing Photoluminescence property by Surface Activated Bonding based on Fast Atom Beam
Yuning Wang, Takuya Mitarai, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 2019
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Control of slow-light effect in metamaterial-loaded Si waveguide
Makoto Tanaka, Tomohiro Amemiya, Satoshi Yamasaki, Hibiki Kagami, Keisuke Masuda, Nobuhiko Nishiyama, Shigehisa Arai
2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) 2019
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Metamaterial infrared refractometer for detecting broadband complex refractive index of liquid material
Hibiki Kagami, Tomohiro Amemiya, Keisuke Masuda, Makoto Tanaka, Nobuhiko Nishiyama, Shigehisa Arai
Optics InfoBase Conference Papers 2019 2019
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Investigation of bonding strength between (InP, Si)/SiO2 and Si by Surface Activated Bonding based on Fast Atom Beam assisted by Si nano-film
Weicheng Fang, Yuning Wang, Tomohiro Amemiya, Nobuhiko Nishiyama
Optics InfoBase Conference Papers 2019 2019
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Buried-ridge-waveguide Type GaInAsP/InP Membrane Distributed-Reflector Lasers for Reduction of Differential Resistance
Naoki Takahashi, Nagisa Nakamura, Takamasa Yoshida, Weicheng Fang, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2019 COMPOUND SEMICONDUCTOR WEEK (CSW) 2019
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Analysis of an I/O metal grating coupler for organic membrane photonic integrated circuits
Keisuke Masuda, Tomohiro Amemiya, Hibiki Kagami, Makoto Tanaka, Nobuhiko Nishiyama, Shigehisa Arai
Japanese Journal of Applied Physics 58 ( 5 ) 2019
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Fabrication of Si photonics waveguides by thick resist-mask electron beam lithography proximity effect correction
Moataz Eissa, Takuya Mitarai, Tomohiro Amemiya, Nobuhiko Nishiyama, Yasuyuki Miyamoto
Optics InfoBase Conference Papers 2019 2019
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Optical-Response Analysis of Voltage-Modulated 1.3 μm Wavelength AlGaInAs/InP Transistor Laser
Yusei Goto, Shoichi Yoshitomi, Kentaro Yamanaka, Nobuhiko Nishiyama, Shigehisa Arai
Asia Communications and Photonics Conference, ACP 2018- 2018.12
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Low Threshold Current and High-speed Operation of Membrane Lasers
Shigehisa Arai, Nobuhiko Nishiyama, Tomohiro Amemiya
31st Annual Conference of the IEEE Photonics Society, IPC 2018 2018.11
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90°C CW Operation of 1.3-μm Wavelength npn-AlGaInAs/InP Transistor Lasers by Thick and Wide Base-Electrode
Shoichi Yoshitomi, Kentaro Yamanaka, Yusei Goto, Nobuhiko Nishiyama, Shigehisa Arai
Conference Digest - IEEE International Semiconductor Laser Conference 2018- 43 - 44 2018.10
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High Power, 14xx-nm Eye-safe, Epitaxially Stacked Pulse Laser for Detection and Ranging Applications
Yasutaka Higa, Masahiro Yoshida, Nobuhiko Nishiyama, Yasuyuki Miyamoto, Nobuyuki Kagi
Conference Digest - IEEE International Semiconductor Laser Conference 2018- 237 - 238 2018.10
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Energy Cost Analysis of Ridge-Waveguide Type Membrane Distributed-Reflector Lasers for On-chip Application
Nagisa Nakamura, Takamasa Yoshida, Weicheng Fang, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
Conference Digest - IEEE International Semiconductor Laser Conference 2018- 153 - 154 2018.10
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Highly efficient double-taper-type coupler between III-V/silicon-on-insulator hybrid device and silicon waveguide
Junichi Suzuki, Fumihito Tachibana, Kumi Nagasaka, Moataz S. A. M. Eissa, Liu Bai, Takuya Mitarai, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 57 ( 9 ) 2018.9
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Si-Photonics-Based Layer-to-Layer Coupler Toward 3D Optical Interconnection Reviewed
Nishiyama Nobuhiko, Kang JoonHyun, Kuno Yuki, Itoh Kazuto, Atsumi Yuki, Amemiya Tomohiro, Arai Shigehisa
IEICE TRANSACTIONS ON ELECTRONICS E101C ( 7 ) 501 - 508 2018.7
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Analysis of the slow-light effect in silicon wire waveguides with metamaterials
Satoshi Yamasaki, Tomohiro Amemiya, Zhichen Gu, Junichi Suzuki, Nobuhiko Nishiyama, Shigehisa Arai
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS 35 ( 4 ) 797 - 804 2018.4
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20 Gbps operation of membrane-based GaInAs/InP waveguide-type p-i-n photodiode bonded on Si substrate Reviewed
Zhichen Gu, Daisuke Inoue, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
Applied Physics Express 11 ( 2 ) 2018.2
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Lasing characteristics of 1.3-mu m npn-AlGaInAs transistor-laser with narrower-bandgap p-GaInAsP base layer on semi-insulating InP substrate Reviewed
Shoichi Yoshitomi, Shotaro Tadano, Kentaro Yamanaka, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 57 ( 1 ) 2018.1
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Self-Holding Magneto-Optical Switch Integrated with Thin-Film Magnet Reviewed
Okazeri, K., Muraoka, K., Shoji, Y., Nakagawa, S., Nishiyama, N., Arai, S., Mizumoto, T.
IEEE Photonics Technology Letters 30 ( 4 ) 371 - 374 2018.1
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20-Gbit/s direct modulation of GaInAsP/InP membrane distributed-reflector laser with energy cost of less than 100 fJ/bit
Takahiro Tomiyasu, Daisuke Inoue, Takuo Hiratani, Kai Fukuda, Nagisa Nakamura, Tatsuya Uryu, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
APPLIED PHYSICS EXPRESS 11 ( 1 ) 2018.1
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Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon
Inoue, D., Jung, D., Norman, J., Wan, Y., Nishiyama, N., Arai, S., Gossard, A.C., Bowers, J.E.
Optics Express 26 ( 6 ) 2018
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Inoue, D., Wan, Y., Jung, D., Norman, J., Shang, C., Nishiyama, N., Arai, S., Gossard, A.C., Bowers, J.E.
Applied Physics Letters 113 ( 9 ) 2018
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Self-holding operation of magneto-optical switch using thin-film magnet Reviewed
Ken Okazeri, Kenji Muraoka, Yuya Shoji, Shigeki Nakagawa, Nobuhiko Nishiyama, Shigehisa Arai, Tetsuya Mizumoto
Optics InfoBase Conference Papers 2018 2018
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Design of GaInAs/InP membrane p-i-n photodiode with back-end distributed-Bragg-reflector (DBR)
Xu Zheng, Zhichen Gu, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
Optics InfoBase Conference Papers 2018 2018
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Slow-light Si-wire Waveguide with Metamaterial
Satoshi Yamasaki, Tomohiro Amemiya, Zhichen Gu, Junichi Suzuki, Keisuke Masuda, Hibiki Kagami, Nobuhiko Nishiyama, Shigehisa Arai
2018 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) 2018
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High-efficiency strip-loaded waveguide based silicon Mach-Zehnder modulator with vertical p-n junction phase shifter Reviewed
Yuriko Maegami, Guangwei Cong, Morifumi Ohno, Makoto Okano, Kazuto Itoh, Nobuhiko Nishiyama, Shigehisa Arai, Koji Yamada
OPTICS EXPRESS 25 ( 25 ) 31407 - 31416 2017.12
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High Efficiency Operation of GaInAsP/InP Membrane Distributed-Reflector Laser on Si Reviewed
Takuo Hiratani, Daisuke Inoue, Takahiro Tomiyasu, Kai Fukuda, Nagisa Nakamura, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
IEEE PHOTONICS TECHNOLOGY LETTERS 29 ( 21 ) 1832 - 1835 2017.11
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Integrated Optical Link on Si Substrate Using Membrane Distributed-Feedback Laser and p-i-n Photodiode Reviewed
Daisuke Inoue, Takuo Hiratani, Kai Fukuda, Takahiro Tomiyasu, Zhichen Gu, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 23 ( 6 ) 2017.11
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High-Efficiency Operation of Membrane Distributed-Reflector Lasers on Silicon Substrate Reviewed
Takuo Hiratani, Daisuke Inoue, Takahiro Tomiyasu, Kai Fukuda, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 23 ( 6 ) 2017.11
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On-chip membrane-based GaInAs/InP waveguide-type p-i-n photodiode fabricated on silicon substrate Reviewed
Zhichen Gu, Tatsuya Uryu, Nagisa Nakamura, Daisuke Inoue, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
APPLIED OPTICS 56 ( 28 ) 7841 - 7848 2017.10
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Optically Driven Terahertz Wave Modulator Using Ring- haped Microstripline With GaInAs Photoconductive Mesa Structure
Satoshi Yamasaki, Akio Yasui, Tomohiro Amemiya, Kentaro Furusawa, Shinsuke Hara, Issei Watanabe, Atsushi Kanno, Norihiko Sekine, Zhichen Gu, Nobuhiko Nishiyama, Akifumi Kasamatsu, Shigehisa Arai
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 23 ( 4 ) 2017.7
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High-differential quantum efficiency operation of GaInAsP/InP membrane distributed-reflector laser on Si Reviewed
Takahiro Tomiyasu, Takuo Hiratani, Daisuke Inoue, Nagisa Nakamura, Kai Fukuda, Tatsuya Uryu, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
APPLIED PHYSICS EXPRESS 10 ( 6 ) 2017.6
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Introduction of AlInAs-oxide current-confinement structure into GaInAsP/SOI hybrid Fabry-Perot laser Reviewed
Junichi Suzuki, Yusuke Hayashi, Satoshi Inoue, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 56 ( 6 ) 2017.6
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Waveguide loss reduction of lateral-current-injection type GaInAsP/InP membrane Fabry-Perot laser Reviewed
Takahiro Tomiyasu, Takuo Hiratani, Daisuke Inoue, Nagisa Nakamura, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 56 ( 5 ) 2017.5
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90 degrees C continuous-wave operation of GaInAsP/InP membrane distributed-reflector laser on Si substrate Reviewed
Takuo Hiratani, Daisuke Inoue, Takahiro Tomiyasu, Kai Fukuda, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
APPLIED PHYSICS EXPRESS 10 ( 3 ) 2017.3
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Analysis of plasmonic phase modulator with furan-thiophene chromatophore electro-optic polymer Reviewed
Naoya Hojo, Tomohiro Amemiya, Kazuto Itoh, Zhichen Gu, Chiyumi Yamada, Toshiki Yamada, Junichi Suzuki, Yusuke Hayashi, Nobuhiko Nishiyama, Akira Otomo, Shigehisa Arai
APPLIED OPTICS 56 ( 8 ) 2053 - 2059 2017.3
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Study of a slow-light-enhanced membrane photodetector for realizing on-chip interconnection with low power consumption Reviewed
Zhichen Gu, Takuo Hiratani, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS 34 ( 2 ) 440 - 446 2017.2
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Preliminary reliability test of lateral-current-injection GaInAsP/InP membrane distributed feedback laser on Si substrate fabricated by adhesive wafer bonding Reviewed
Kai Fukuda, Daisuke Inoue, Takuo Hiratani, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 56 ( 2 ) 2017.2
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Amorphous-Si waveguide on a garnet magneto-optical isolator with a TE mode nonreciprocal phase shift Reviewed
Eiichi Ishida, Kengo Miura, Yuya Shoji, Hideki Yokoi, Tetsuya Mizumoto, Nobuhiko Nishiyama, Shigehisa Arai
OPTICS EXPRESS 25 ( 1 ) 452 - 462 2017.1
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N-2-Plasma Activated Bonding for GaInAsP/SOI Hybrid Lasers Reviewed
Nobuhiko Nishiyama, Yusuke Hayashi, Junichi Suzuki, Shigehisa Arai
2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) 29 - 29 2017
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Fabrication Technology of III-V Semiconductor Photonic Devices on SOI Substrate Using Direct Bonding Method
Nishiyama Nobuhiko
Journal of Japan Institute of Electronics Packaging 20 ( 6 ) 396 - 400 2017
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High-efficiency Silicon Mach-Zehnder Modulator with Vertical PN Junction Based on Fabrication-friendly Strip-loaded Waveguide
Maegami, Yuriko, Cong, Guangwei, Ohno, Morifumi, Okano, Makoto, Itoh, Kazuto, Nishiyama, Nobuhiko, Arai, Shigehisa, Yamada, Koji, IEEE
2017 Ieee 14th International Conference on Group Iv Photonics (Gfp) 2017
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Progress of hybrid III-V lasers on Si and SOI substrates
Nobuhiko Nishiyama, Shigehisa Arai
Optics InfoBase Conference Papers 2017 2017
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Double Taper-type Mode Convertor for Direct Bonded III-V/SOI Hybrid Photonic Devices Reviewed
Satoshi Inoue, Yusuke Hayashi, Junichi Suzuki, Kazuto Itoh, Kumi Nagasaka, Nobuhiko Nishiyama, Shigehisa Arai
2017 5TH INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) 74 - 74 2017
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III-V/Si Low Temperature Direct Bonding Technology for Photonic Device Integration on SOI Reviewed
Nobuhiko Nishiyama, Yusuke Hayashi, Junichi Suzuki, Shigehisa Arai
2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM) 44 - 45 2017
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Crystalline/Amorphous Si Integrated Optical Couplers for 2D/3D Interconnection Reviewed
Kazuto Itoh, Yuki Kuno, Yusuke Hayashi, Junichi Suzuki, Naoya Hojo, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 22 ( 6 ) 2016.11
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GaInAsP/silicon-on-insulator hybrid laser with ring-resonator-type reflector fabricated by N-2 plasma-activated bonding Reviewed
Yusuke Hayashi, Junichi Suzuki, Satoshi Inoue, Shovon Muhammad Tanvir Hasan, Yuki Kuno, Kazuto Itoh, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 55 ( 8 ) 2016.8
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Low-bias current 10 Gbit/s direct modulation of GaInAsP/InP membrane DFB laser on silicon Reviewed
Daisuke Inoue, Takuo Hiratani, Kai Fukuda, Takahiro Tomiyasu, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
OPTICS EXPRESS 24 ( 16 ) 18571 - 18579 2016.8
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Magneto-optical switch with amorphous silicon waveguides on magneto-optical garnet Reviewed
Eiichi Ishida, Kengo Miura, Yuya Shoji, Tetsuya Mizumoto, Nobuhiko Nishiyama, Shigehisa Arai
Japanese Journal of Applied Physics 55 ( 8 ) 088002 - 88002 2016.7
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Improvement in the current-gain of a 1.3-mu m npn-AlGaInAs/InP transistor laser using a thin p-GaInAsP base layer Reviewed
Takaaki Kaneko, Takumi Yoshida, Shotaro Tadano, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 55 ( 7 ) 2016.7
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Metafilm: Metamaterial Array Embedded in Organic Thin Film Reviewed
Tomohiro Amemiya, Toru Kanazawa, Tatsuhiro Urakami, Atsushi Ishikawa, Naoya Hojo, Akio Yasui, Nobuhiko Nishiyama, Takuo Tanaka, Shigehisa Arai
2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) 2016
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Impedance Analysis of High-speed Lateral-current-injection Membrane DFB Laser on Silicon Reviewed
Daisuke Inoue, Takuo Hiratani, Kai Fukuda, Takahiro Tomiyasu, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2016 INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC) 2016
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Analysis of Voltage Dependence on Lasing Characteristics of 1.3-mu m npn-AlGaInAs/InP Transistor Lasers Reviewed
Shotaro Tadano, Takaaki Kaneko, Kentaro Yamanaka, Nobuhiko Nishiyama, Shigehisa Arai
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) 2016
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10 Gbps Operation of Membrane DFB Laser on Silicon with Record High Modulation Efficiency Reviewed
Daisuke Inoue, Takuo Hiratani, Kai Fukuda, Takahiro Tomiyasu, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) 2016
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Membrane Distributed-reflector Lasers Reviewed
Shigehisa Arai, Nobuhiko Nishiyama, Tomohiro Amemiya, Takuo Hiratani, Daisuke Inoue
2016 21ST OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC) HELD JOINTLY WITH 2016 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING (PS) 2016
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Highly efficient circular holes added a-Si: H grating coupler with metal mirror for 3D optical interconnects Reviewed
JoonHyun Kang, Yuki Kuno, Kazuto Ito, Yusuke Hayashi, Junichi Suzuki, Il-Ki Han, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2016 21ST OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC) HELD JOINTLY WITH 2016 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING (PS) 2016
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Vertical Trident Coupler for 3D Optical Interconnection Reviewed
Kazuto Itoh, Kuno Yusuki, Yusuke Hayashi, Junichi Suzuki, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2016 IEEE 13TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) 60 - 61 2016
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High Asymmetric Light Output Characteristics of Membrane Distributed-Reflector Laser on Si Substrate Reviewed
Takuo Hiratani, Daisuke Inoue, Takahiro Tomiyasu, Kai Fukuda, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2016 INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC) 2016
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GaInAsP/InP Membrane Lasers Reviewed
Shigehisa Arai, Nobuhiko Nishiyama, Tomohiro Amemiya, Takuo Hiratani, Daisuke Inoue
2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) 2016
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GaInAsP/SOI Hybrid Laser with AlInAs-oxide Confinement Structure Fabricated by Plasma Activated Bonding Reviewed
Junichi Suzuki, Satoshi Inoue, Shovon M. D. Tanvir Hasan, Yusuke Hayashi, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) 2016
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10 Gbit/s Data Transmission through Optical Link by Using Membrane DFB Laser and PIN-PD Reviewed
Daisuke Inoue, Takuo Hiratani, Kai Fukuda, Gu Zhichen, Takahiro Tomiyasu, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2016 IEEE PHOTONICS CONFERENCE (IPC) 538 - 539 2016
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Monolithic Integration of Membrane-Based Butt-Jointed Built-in DFB Lasers and p-i-n Photodiodes Bonded on Si Substrate Reviewed
Daisuke Inoue, Takuo Hiratani, Yuki Atsuji, Takahiro Tomiyasu, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 21 ( 6 ) 2015.11
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Room-temperature continuous-wave operation of membrane distributed-reflector laser Reviewed
Takuo Hiratani, Daisuke Inoue, Takahiro Tomiyasu, Yuki Atsuji, Kai Fukuda, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
APPLIED PHYSICS EXPRESS 8 ( 11 ) 2015.11
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High-modulation efficiency operation of GaInAsP/InP membrane distributed feedback laser on Si substrate Reviewed
Daisuke Inoue, Takuo Hiratani, Kai Fukuda, Takahiro Tomiyasu, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
OPTICS EXPRESS 23 ( 22 ) 29024 - 29031 2015.11
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Energy Cost Analysis of Membrane Distributed-Reflector Lasers for On-Chip Optical Interconnects Reviewed
Takuo Hiratani, Takahiko Shindo, Kyohei Doi, Yuki Atsuji, Daisuke Inoue, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 21 ( 6 ) 2015.11
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Optical transmission between III-V chips on Si using photonic wire bonding Reviewed
Zhichen Gu, Tomohiro Amemiya, Atsushi Ishikawa, Takuo Hiratani, Junichi Suzuki, Nobuhiko Nishiyama, Takuo Tanaka, Shigehisa Arai
OPTICS EXPRESS 23 ( 17 ) 22394 - 22403 2015.8
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Low-threshold-current operation of membrane distributed-feedback laser with surface grating bonded on Si substrate Reviewed
Yuki Atsuji, Kyohei Doi, Takuo Hiratani, Daisuke Inoue, Jieun Lee, Yuki Atsumi, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 54 ( 8 ) 2015.8
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Investigation of Optical Interconnection by using Photonic Wire Bonding Reviewed
ZhiChen Gu, Tomohiro Amemiya, Atsushi Ishikawa, Yuki Atsumi, JoonHyun Kang, Takuo Hiratani, Yusuke Hayashi, Junichi Suzuki, Nobuhiko Nishiyama, Takuo Tanaka, Shigehisa Arai
JOURNAL OF LASER MICRO NANOENGINEERING 10 ( 2 ) 148 - 153 2015.5
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Thermal properties of lateral-current-injection semiconductor membrane Fabry-Perot laser under continuous-wave operation Reviewed
Takuo Hiratani, Kyohei Doi, Jieun Lee, Daisuke Inoue, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 54 ( 4 ) 2015.4
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Design of apodized hydrogenated amorphous silicon grating couplers with metal mirrors for inter-layer signal coupling: Toward three-dimensional optical interconnection Reviewed
Yuki Kuno, JoonHyun Kang, Yusuke Hayashi, Junichi Suzuki, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 54 ( 4 ) 2015.4
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Amemiya, T., Ishikawa, A., Kanazawa, T., Kang, J., Nishiyama, N., Miyamoto, Y., Tanaka, T., Arai, S.
Scientific Reports 5 8985 2015.3
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Sub-milliampere threshold operation of butt-jointed built-in membrane DFB laser bonded on Si substrate Reviewed
Daisuke Inoue, Jieun Lee, Takuo Hiratani, Yuki Atsuji, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
OPTICS EXPRESS 23 ( 6 ) 7771 - 7778 2015.3
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Optical Interconnection between III-V Chips on Si by using Photonic Wire Bonding Reviewed
Zhichen Gu, Tomohiro Amemiya, Atsushi Ishikawa, Takuo Hiratani, Junichi Suzuki, Nobuhiko Nishiyama, Takuo Tanaka, Shigehisa Arai
2015 IEEE OPTICAL INTERCONNECTS CONFERENCE 120 - 121 2015
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Membrane Photonic Integration on Si Platform Reviewed
Tomohiro Amemiyal, Takuo Hiratani, Daisuke Inoue, Takahiro Tomiyasu, Kai Fukuda, Nobuhiko Nishiyama, Shigehisa Arai
2015 OPTO-ELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC) 2015
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Introduction to Issue on Semiconductor Lasers
Mawst, L.J., Chrostowski, L., Coleman, A.C., H{\"o}fling, S., Nishiyama, N., Shterengas, L.
IEEE Journal on Selected Topics in Quantum Electronics 21 ( 6 ) 2015
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High Modulation Efficiency of Sub-milliampere Threshold GaInAsP/InP Membrane DFB Laser Reviewed
Daisuke Inoue, Takuo Hiratani, Kai Fukuda, Takahiro Tomiyasu, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2015 PHOTONICS CONFERENCE (IPC) 2015
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Integration of Membrane-based DFB Laser and PIN Photodiode on Si Substrate toward On-chip Interconnection Reviewed
Daisuke Inoue, Takuo Hiratani, Takahiro Tomiyasu, Yuki Atsuji, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2015 IEEE OPTICAL INTERCONNECTS CONFERENCE 124 - 125 2015
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GaInAsP/InP-based optical modulator consisting of gap-surface-plasmon-polariton waveguide: theoretical analysis Reviewed
Tomohiro Amemiya, Eijun Murai, Zhichen Gu, Nobuhiko Nishiyama, Shigehisa Arai
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS 31 ( 11 ) 2908 - 2913 2014.11
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Surface assessment after removing III-V layer on III-V/silicon-on-insulator wafer fabricated by plasma activated bonding Reviewed
Junichi Suzuki, Yusuke Hayashi, Yuki Kuno, JoonHyun Kang, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 53 ( 11 ) 2014.11
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Amorphous-Silicon Inter-Layer Grating Couplers With Metal Mirrors Toward 3-D Interconnection Reviewed
JoonHyun Kang, Yuki Atsumi, Yusuke Hayashi, Junichi Suzuki, Yuki Kuno, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 20 ( 4 ) 2014.7
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Room-temperature continuous-wave operation of GaInAsP/InP lateral-current-injection membrane laser bonded on Si substrate Reviewed
Daisuke Inoue, Jieun Lee, Kyohei Doi, Takuo Hiratani, Yuki Atsuji, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
APPLIED PHYSICS EXPRESS 7 ( 7 ) 2014.7
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Analysis of higher-order mode suppressed transmission in low-loss silicon multimode waveguides on silicon-on-insulator substrates Reviewed
Yuki Atsumi, JoonHyun Kang, Yusuke Hayashi, Junichi Suzuki, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 53 ( 7 ) 2014.7
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Loss reduction of Si optical waveguides by beam step-size fracturing technique in electron beam lithography Reviewed
Yuki Atsumi, Nit Taksatorn, Nobuhiko Nishiyama, Yasuyuki Miyamoto, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 53 ( 6 ) 2014.6
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Thermal Analysis of Lateral-Current-Injection Membrane Distributed Feedback Laser Reviewed
Kyohei Doi, Takahiko Shindo, Jieun Lee, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
IEEE JOURNAL OF QUANTUM ELECTRONICS 50 ( 5 ) 321 - 326 2014.5
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50 Gbps data transmission through amorphous silicon interlayer grating couplers with metal mirrors Reviewed
Joon Hyun Kang, Yuki Atsumi, Yusuke Hayashi, Junichi Suzuki, Yuki Kuno, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
APPLIED PHYSICS EXPRESS 7 ( 3 ) 2014.3
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Investigation of High Temperature Process for III-V/SOI Hybrid Photonic Devices with AlInAs Oxidation Current Confinement Layer Reviewed
Yusuke Hayashi, Junich Suzuki, Yuki Kuno, JoonHyun Kang, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2014 4TH IEEE INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) 17 - 17 2014
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High Quality Quantum-well Intermixing for InP-based Membrane Photonic Integration on Si Reviewed
Jieun Lee, Kyohei Doi, Takuo Hiratani, Daisuke Inoue, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 2014
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Low-Power and High-Speed Operation Capabilities of Semiconductor Membrane Lasers - Energy Cost Limited by Joule Heat Reviewed
Takuo Hiratani, Kyohei Doi, Yuki Atsuji, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 2014
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Low-threshold-current Operation of Lateral Current Injection Membrane Distributed-feedback Laser Bonded on Si Reviewed
Yuki Atsuji, Kyohei Doi, Jieun Lee, Yuki Atsumi, Takuo Hiratani, Daisuke Inoue, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 2014
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Membrane hybrid optical devices and related technologies toward On-Si photonic integrated circuits Reviewed
Nobuhiko Nishiyama, Shigehisa Arai
26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 2014
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Light Propagation Properties of Si Waveguides after Removing III-V Layer on a III-V/SOI Wafer Fabricated by Plasma Activated Bonding Reviewed
Junichi Suzuki, Yusuke Hayashi, Yuki Kuno, JoonHyun Kang, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2014 4TH IEEE INTERNATIONAL WORKSHOP ON LOW TEMPERATURE BONDING FOR 3D INTEGRATION (LTB-3D) 20 - 20 2014
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GaInAsP/InP Lateral-Current-Injection Membrane DFB Laser Integrated with GaInAsP Waveguides on Si Substrate Reviewed
Daisuke Inoue, Jieun Lee, Takuo Hiratani, Yuki Atsuji, Amemiya Tomohiro, Nobuhiko Nishiyama, Shigehisa Arai
2014 24TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2014) 32 - 33 2014
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Electrode Position Dependence of Energy Cost in Lateral-Current-Injection Membrane Distributed Reflector Laser Reviewed
Takuo Hiratani, Yuki Atsuji, Jieun Lee, Daisuke Inoue, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2014 24TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2014) 111 - 112 2014
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Spectral characteristics of a 1.3-mu m npn-AIGalnAs/IlnP transistor laser under various operating conditions Reviewed
Masashi Yukinari, Noriaki Sato, Nobuhiko Nishiyama, Shigehisa Arai
IEICE ELECTRONICS EXPRESS 11 ( 18 ) 2014
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Lasing characteristics of 1.3-mu m npn-AlGaInAs/InP Transistor Laser - dependence of the base layer structure Reviewed
Takumi Yoshida, Masashi Yukinari, Takaaki Kaneko, Nobuhiko Nishiyama, Shigehisa Arai
26TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 2014
-
10 Gbps Operation of Top Air-Clad Lateral Junction Waveguide-Type Photodiodes Reviewed
Takahiko Shindo, Takayuki Koguchi, Mitsuaki Futami, Kyouhei Doi, Yoshiyuki Yamahara, Jieun Lee, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 52 ( 11 ) 2013.11
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Design and Characterization of AlGaInAs/InP Buried Heterostructure Transistor Lasers Emitting at 1.3-mu m Wavelength
Noriaki Sato, Mizuki Shirao, Takashi Sato, Masashi Yukinari, Nobuhiko Nishiyama, Tomohiro Amemiya, Shigehisa Arai
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 19 ( 4 ) 2013.7
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Lateral-Current-Injection Type Membrane DFB Laser With Surface Grating Reviewed
Takahiko Shindo, Mitsuaki Futami, Tadashi Okumura, Ryo Osabe, Takayuki Koguchi, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
IEEE PHOTONICS TECHNOLOGY LETTERS 25 ( 13 ) 1282 - 1285 2013.7
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Design of Lateral-Current-Injection-Type Membrane Distributed-Feedback Lasers for On-Chip Optical Interconnections
Takahiko Shindo, Mitsuaki Futami, Kyohei Doi, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 19 ( 4 ) 2013.7
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Low threshold current density operation of a GaInAsP/Si hybrid laser prepared by low-temperature N2 plasma activated bonding Reviewed
Yusuke Hayashi, Ryo Osabe, Keita Fukuda, Yuki Atsumi, JoonHyun Kang, Nobuhiko Nishiyama, Shigehisa Arai
Japanese Journal of Applied Physics 52 ( 6 ) 2013.6
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Lateral Current Injection Type Membrane DFB lasers
Arai, Shigehisa, Nishiyama, Nobuhiko, Amemiya, Tomohiro, Shindo, Takahiko, Futami, Mitsuaki, Doi, Kyohei, IEEE
2013 Conference on Lasers and Electro-Optics Pacific Rim (Cleo-Pr) 2013
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Ultraviolet-induced Wavelength Trimming of BCB-buried Athermal Si Slot Wavelength Filters Reviewed
Yuki Atsumi, Takeshi Sifer, JoonHyun Kang, Yusuke Hayashi, Nobuhiko Nishiyama, Shigehisa Arai
2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR) 2013
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Inter-Layer Grating Coupler with Metal Mirrors for 3D Optical Interconnects Reviewed
JoonHyun Kang, Yuki Atsumi, Takeshi Sifer, Yusuke Hayashi, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR) 2013
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Design of Multi-Functional GaInAsP/Si Hybrid Semiconductor Optical Amplifier Array with AlInAs-Oxide Current Confinement Layer Reviewed
Yusuke Hayashi, Keita Fukuda, Ryo Osabe, Jun-ichi Suzuki, Yuki Atsumi, JoonHyun Kang, Nobuhiko Nishiyama, Shigehisa Arai
2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 2013
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Low-Threshold Operation of LCI-Membrane-DFB Lasers with Be-doped GaInAs Contact Layer Reviewed
Mitsuaki Futami, Takahiko Shindo, Kyohei Doi, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 285 - 288 2013
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Spectral Characteristics under Various Operation Conditions of 1.3-mu m npn-AlGaInAs/InP Transistor Laser Reviewed
Masashi Yukinari, Noriaki Sato, Nobuhiko Nishiyama, Shigehisa Arai
2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR) 2013
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Electrically-driven Permeability-controlled Optical Modulator using Mach-Zehnder Interferometer with Metamaterial Reviewed
Tomohiro Amemiya, Toru Kanazawa, Atsushi Ishikawa, Seiji Myoga, Eijun Murai, Takahiko Shindo, JoonHyung Kang, Nobuhiko Nishiyama, Yasuyuki Miyamoto, Takuo Tanaka, Shigehisa Arai
2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) 2013
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Room-temperature continuous-wave operation of npn-algainas transistor laser emitting at 1.3-μ m wavelength Reviewed
Noriaki Sato, Mizuki Shirao, Takashi Sato, Masashi Yukinari, Nobuhiko Nishiyama, Tomohiro Amemiya, Shigehisa Arai
IEEE Photonics Technology Letters 25 ( 8 ) 728 - 730 2013
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Multi-stacked silicon wire waveguides and couplers toward 3D optical interconnects
J. Kang, N. Nishiyama, Y. Atsumi, T. Amemiya, S. Arai
OPTOELECTRONIC INTERCONNECTS XIII 8630 2013
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Compact InP-based 1x2 MMI Splitter on Si Substrate with BCB Wafer Bonding for Membrane Photonic Circuits Reviewed
Jieun Lee, Yoshiaki Yamahara, Yuki Atsumi, Takahiko Shindo, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2012 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 8 - 11 2013
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Bandgap Wavelength Shift in Quantum Well Intermixing using Different SiO2 masks for Photonic Integration Reviewed
Jieun Lee, Yoshiaki Yamahara, Mitsuaki Futami, Takahiko Shindo, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 2013
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Semiconductor Membrane Photonic Devices for Ultra-low Power Consumption Operation Reviewed
Shigehisa Arai, Nobuhiko Nishiyama, Tomohiro Amemiya, Takahiko Shindo, Jieun Lee, Mitsuaki Futami, Kyohei Doi, Takuo Hiratani
2013 IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING SERIES 48 - + 2013
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Room-temperature Continuous-wave Operation of Lateral Current Injection Membrane Laser Reviewed
Kyohei Doi, Takahiko Shindo, Mitsuaki Futami, Jieun Lee, Takuo Hiratani, Daisuke Inoue, Shu Yang, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 2013
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Layer-to-Layer Grating Coupler Based on Hydrogenated Amorphous Silicon for Three-Dimensional Optical Circuits Reviewed
Joonhyun Kang, Yuki Atsumi, Manabu Oda, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 51 ( 12 ) 2012.12
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Simultaneous retrieval of fluidic refractive index and surface adsorbed molecular film thickness using silicon wire waveguide biosensors Reviewed
Yuki Atsumi, Dan-Xia Xu, Andre Delage, Jens H. Schmid, Martin Vachon, Pavel Cheben, Siegfried Janz, Nobuhiko Nishiyama, Shigehisa Arai
OPTICS EXPRESS 20 ( 24 ) 26969 - 26977 2012.11
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Improved Regrowth Interface of AlGaInAs/InP-Buried-Heterostructure Lasers by In-Situ Thermal Cleaning Reviewed
Yuta Takino, Mizuki Shirao, Noriaki Sato, Takashi Sato, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
IEEE JOURNAL OF QUANTUM ELECTRONICS 48 ( 8 ) 971 - 979 2012.8
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Carrier-concentration-dependent resonance frequency shift in a metamaterial loaded semiconductor Reviewed
Seiji Myoga, Tomohiro Amemiya, Atsushi Ishikawa, Nobuhiko Nishiyama, Takuo Tanaka, Shigehisa Arai
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS 29 ( 8 ) 2110 - 2115 2012.8
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GaInAsP/InP Lateral Current Injection Laser With Uniformly Distributed Quantum-Well Structure Reviewed
Mitsuaki Futami, Takahiko Shindo, Takayuki Koguchi, Keisuke Shinno, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
IEEE PHOTONICS TECHNOLOGY LETTERS 24 ( 11 ) 888 - 890 2012.6
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Permeability retrieval in InP-based waveguide optical device combined with metamaterial Reviewed
Tomohiro Amemiya, Seiji Myoga, Takahiko Shindo, Eijun Murai, Nobuhiko Nishiyama, Shigehisa Arai
OPTICS LETTERS 37 ( 12 ) 2301 - 2303 2012.6
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Carrier-Transport-Limited Modulation Bandwidth in Distributed Reflector Lasers With Wirelike Active Regions Reviewed
Daisuke Takahashi, SeungHun Lee, Mizuki Shirao, Takahiko Shindo, Keisuke Shinno, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
IEEE JOURNAL OF QUANTUM ELECTRONICS 48 ( 5 ) 688 - 695 2012.5
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Low-Loss GaInAsP Wire Waveguide on Si Substrate with Benzocyclobutene Adhesive Wafer Bonding for Membrane Photonic Circuits Reviewed
Jieun Lee, Yasuna Maeda, Yuki Atsumi, Yuta Takino, Nobuhiko Nishiyama, Sigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 51 ( 4 ) 2012.4
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Room-temperature operation of npn-AlGaInAs/InP multiple quantum well transistor laser emitting at 1.3-mu m wavelength Reviewed
Mizuki Shirao, Takashi Sato, Noriaki Sato, Nobuhiko Nishiyama, Shigehisa Arai
OPTICS EXPRESS 20 ( 4 ) 3983 - 3989 2012.2
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Athermal Wavelength Filters toward Optical Interconnection to LSIs Reviewed
Yuki Atsumi, Manabu Oda, Joonhyun Kang, Nobuhiko Nishiyama, Shigehisa Arai
IEICE TRANSACTIONS ON ELECTRONICS E95C ( 2 ) 229 - 236 2012.2
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Foreword: Special section on photonic devices using nanofabrication technology and their applications Reviewed
Eiji Higurashi, Nobuhiko Nishiyama, Takeru Amano, Akio Higo, Hiroyuki Ishii, Jun Mizuno, Masashi Nakao, Takahito Ono, Shinichi Saito, Takanori Shimizu, Yoshimasa Sugimoto, Junichi Takahara, Masayuki Izutsu
IEICE Transactions on Electronics E95-C ( 2 ) 117 2012
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Compact Optical/THz Signal Converter using Photo-generated Carrier Gate in THz Waveguide Reviewed
Daisuke Take, Mizuki Shirao, Kaoru Maruyama, Nobuhiko Nishiyama, Masahiro Asada, Shigehisa Arai
2012 IEEE PHOTONICS CONFERENCE (IPC) 157 - + 2012
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GaInAsP/Si Hybrid Fabry-Perot Laser using N-2 Plasma Activated Low Temperature Bonding Reviewed
Yusuke Hayashi, Ryo Osabe, Keita Fukuda, Yuki Atsumi, JoonHyun Kang, Nobuhiko Nishiyama, Shigehisa Arai
2012 IEEE PHOTONICS CONFERENCE (IPC) 818 - 819 2012
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Theoretical analysis of the damping effect on a transistor laser Reviewed
Mizuki Shirao, Nobuhiko Nishiyama, Noriaki Sato, Shigehisa Arai
IEICE ELECTRONICS EXPRESS 9 ( 23 ) 1792 - 1798 2012
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Room-Temperature Continuous-Wave Operation of a 1.3-mu m npn-AlGaInAs/InP Transistor Laser Reviewed
Noriaki Sato, Mizuki Shirao, Takashi Sato, Masashi Yukinari, Nobuhiko Nishiyama, Tomohiro Amemiya, Shigehisa Arai
2012 23RD IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC) 18 - + 2012
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AlInAs selective oxidation for GaInAsP/Si hybrid semiconductor laser using surface activated bonding
Yusuke Hayashi, Ryo Osabe, Keita Fukuda, Nobuhiko Nishiyama, Shigehisa Arai
Proceedings of 2012 3rd IEEE International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2012 93 2012
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Ishigaki, K., Shiraishi, M., Suzuki, S., Asada, M., Nishiyama, N., Arai, S.
Electronics Letters 48 ( 10 ) 2012
-
Modulation Bandwidth of GaInAsP/InP Lateral-Current-Injection Membrane Laser Reviewed
Takahiko Shindo, Mitsuaki Futami, Kyohei Doi, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2012 23RD IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC) 106 - + 2012
-
Low-Loss Amorphous Silicon Multilayer Waveguides Vertically Stacked on Silicon-on-Insulator Substrate Reviewed
JoonHyun Kang, Yuki Atsumi, Manabu Oda, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 50 ( 12 ) 2011.12
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GaInAsP/InP Membrane Lasers for Optical Interconnects Reviewed
Shigehisa Arai, Nobuhiko Nishiyama, Takeo Maruyama, Tadashi Okumura
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 17 ( 5 ) 1381 - 1389 2011.9
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Lateral-Current-Injection Distributed Feedback Laser With Surface Grating Structure Reviewed
Takahiko Shindo, Tadashi Okumura, Hitomi Ito, Takayuki Koguchi, Daisuke Takahashi, Yuki Atsumi, Joonhyun Kang, Ryo Osabe, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 17 ( 5 ) 1175 - 1182 2011.9
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Low-Power-Consumption High-Eye-Margin 10-Gb/s Operation by GaInAsP/InP Distributed Reflector Lasers With Wirelike Active Regions Reviewed
SeungHun Lee, Daisuke Takahashi, Takahiko Shindo, Keisuke Shinno, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
IEEE PHOTONICS TECHNOLOGY LETTERS 23 ( 18 ) 1349 - 1351 2011.9
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Bonding and Photoluminescence Characteristics of GaInAsP/InP Membrane Structure on Silicon-on-Insulator Waveguides by Surface Activated Bonding Reviewed
Ryo Osabe, Tadashi Okumura, Simon Kondo, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 50 ( 8 ) 2011.8
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Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried-Heterostructure Lasers Reviewed
Yuta Takino, Mizuki Shirao, Takashi Sato, Nobuhiko Nishiyama, Tomohiro Amemiya, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 50 ( 7 ) 2011.7
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Room-Temperature Continuous-Wave Operation of 1.3-mu m Transistor Laser with AlGalnAs/InP Quantum Wells Reviewed
Mizuki Shirao, Takashi Sato, Yuta Takino, Noriaki Sato, Nobuhiko Nishiyama, Shigehisa Arai
APPLIED PHYSICS EXPRESS 4 ( 7 ) 2011.7
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Nonunity permeability in metamaterial-based GaInAsP/InP multimode interferometers
T. Amemiya, T. Shindo, D. Takahashi, S. Myoga, N. Nishiyama, S. Arai
OPTICS LETTERS 36 ( 12 ) 2327 - 2329 2011.6
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Magnetic Interactions at Optical Frequencies in an InP-Based Waveguide Device with Metamaterial Reviewed
Tomohiro Amemiya, Takahiko Shindo, Daisuke Takahashi, Nobuhiko Nishiyama, Shigehisa Arai
IEEE JOURNAL OF QUANTUM ELECTRONICS 47 ( 5 ) 736 - 744 2011.5
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Injection-Type GaInAsP/InP Membrane Buried Heterostructure Distributed Feedback Laser with Wirelike Active Regions Reviewed
Tadashi Okumura, Takayuki Koguchi, Hitomi Ito, Nobuhiko Nishiyama, Shigehisa Arai
APPLIED PHYSICS EXPRESS 4 ( 4 ) 2011.4
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Large-Signal Analysis of a Transistor Laser Reviewed
Mizuki Shirao, SeungHun Lee, Nobuhiko Nishiyama, Shigehisa Arai
IEEE JOURNAL OF QUANTUM ELECTRONICS 47 ( 3 ) 359 - 367 2011.3
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Lateral Junction Waveguide-Type Photodiode Grown on Semi-Insulating InP Substrate Reviewed
Tadashi Okumura, Daisuke Kondo, Hitomi Ito, SeungHun Lee, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 50 ( 2 ) 2011.2
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GaInAsP/InP lateral-current-injection distributed feedback laser with a-Si surface grating Reviewed
Takahiko Shindo, Tadashi Okumura, Hitomi Ito, Takayuki Koguchi, Daisuke Takahashi, Yuki Atsumi, Joonhyun Kang, Ryo Osabe, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
OPTICS EXPRESS 19 ( 3 ) 1884 - 1891 2011.1
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Lateral Current Injection Laser with Uniformly Distributed Quantum-Well Structure Reviewed
Takahiko Shindo, Mitsuaki Futami, Ryo Osabe, Takayuki Koguchi, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2011 IEEE PHOTONICS CONFERENCE (PHO) 678 - + 2011
-
Numerical analysis of optical gain of a 3-terminal HBT-SOA
Mizuki Shirao, Nobuhiko Nishiyama, Shigehisa Arai
Optics InfoBase Conference Papers 1857 - 1858 2011
-
Lasing operation of long-wavelength transistor laser using AGaInAs/InP quantum well active region
Mizuki Shirao, Takashi Sato, Yuta Takino, Noriaki Sato, Nobuhiko Nishiyama, Shigehisa Arai
Conference Proceedings - International Conference on Indium Phosphide and Related Materials 2011
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Uniform BCB bonding process toward low propagation loss in GaInAsP photonic wire waveguide on Si wafer
Yasuna Maeda, Jieun Lee, Yuki Atsumi, Nobuhiko Nishiyama, Shigehisa Arai
Conference Proceedings - International Conference on Indium Phosphide and Related Materials 2011
-
Carrier Concentration Dependent Resonance Frequency Shift in Metamaterial Loaded Semiconductor Reviewed
Seiji Myoga, Tomohiro Amemiya, Atsushi Ishikawa, Nobuhiko Nishiyama, Takuo Tanaka, Shigehisa Arai
2011 IEEE PHOTONICS CONFERENCE (PHO) 785 - + 2011
-
Membrane InP-based Lasers and Related Devices for On-chip Interconnection Reviewed
Nobuhiko Nishiyama, Shigehisa Arai
2011 IEEE PHOTONICS CONFERENCE (PHO) 397 - 398 2011
-
Non-unity Permeability in InP-based Mach-Zehnder Interferometer with Metamaterial Reviewed
Tomohiro Amemiya, Takahiko Shindo, Seiji Myoga, Nobuhiko Nishiyama, Shigehisa Arai
2011 IEEE PHOTONICS CONFERENCE (PHO) 743 - + 2011
-
Room-Temperature Lasing Operation of a 1.3-mu m npn-AlGaInAs/InP Transistor Laser Reviewed
Takashi Sato, Mizuki Shirao, Yuta Takino, Noriaki Sato, Nobuhiko Nishiyama, Shigehisa Arai
2011 IEEE PHOTONICS CONFERENCE (PHO) 648 - 649 2011
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Low power consumption semiconductor lasers for optical interconnections Reviewed
Nobuhiko Nishiyama, Shigehisa Arai
2010 15TH OPTOELECTRONICS AND COMMUNICATIONS CONFERENCE (OECC) 536 - 537 2010
-
Investigation of Bonding Strength and Photoluminescence Properties of InP/Si Surface Activated Bonding Reviewed
Simon Kondo, Tadashi Okumura, Ryo Osabe, Nobuhiko Nishiyama, Shigehisa Arai
2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 2010
-
Low-Loss Si-Slot Waveguides and Ring Resonator Embedded with Benzocyclobutene Reviewed
Yuki Atsumi, Joonhyun Kang, Yasuna Maeda, Manabu Oda, Nobuhiko Nishiyama, Shigehisa Arai
2010 23RD ANNUAL MEETING OF THE IEEE PHOTONICS SOCIETY 232 - 233 2010
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Lateral Junction Waveguide Type Photodiode for Membrane Photonic Circuits Reviewed
Daisuke Kondo, Tadashi Okumura, Hitomi Ito, SeungHun Lee, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 2010
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Bandwidth Enhancement of Distributed Reflector Lasers at Low Bias Current by Optical Injection Locking Reviewed
SeungHun Lee, Devang Parekh, Takahiko Shindo, Weijian Yang, Peng Guo, Daisuke Takahashi, Noriaki Tajima, Nobuhiko Nishiyama, Connie J. Chang-Hasnain, Shigehisa Arai
2010 CONFERENCE ON OPTICAL FIBER COMMUNICATION OFC COLLOCATED NATIONAL FIBER OPTIC ENGINEERS CONFERENCE OFC-NFOEC 2010
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First Lasing Operation of Injection Type Membrane GaInAsP DFB Laser With Lateral Current Injection BH Structure Reviewed
Tadashi Okumura, Takayuki Koguchi, Hitomi Ito, Nobuhiko Nishiyama, Shigehisa Arai
22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE 137 - 138 2010
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Investigation of Regrowth Interface Quality of AlGaInAs/InP Buried Heterostructure Lasers Reviewed
Yuta Takino, Mizuki Shirao, Takashi Sato, Nobuhiko Nishiyama, Shigehisa Arai
2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 2010
-
Membrane DFB lasers on SOI Reviewed
Shigehisa Arai, Nobuhiko Nishiyama, Tadashi Okumura
2010 Asia Communications and Photonics Conference and Exhibition, ACP 2010 48 - 49 2010
-
Metamaterial-based Control of Permeability in GaInAsP/InP Multimode-Interferometers Reviewed
Tomohiro Amemiya, Takahiko Shindo, Daisuke Takahashi, Nobuhiko Nishiyama, Shigehisa Arai
2010 23RD ANNUAL MEETING OF THE IEEE PHOTONICS SOCIETY 445 - + 2010
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Large Signal Analysis of AlGaInAs/InP Laser Transistor Reviewed
Mizuki Shirao, Nobuhiko Nishiyama, SeungHun Lee, Shigehisa Arai
2010 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (QELS) 2010
-
Thin-Film GaInAsP/InP Lateral Current Injection Type Fabry-Perot Laser - Improved Quantum Efficiency Operation Reviewed
Hitomi Ito, Tadashi Okumura, Daisuke Kondo, Nobuhiko Nishiyama, Shigehisa Arai
2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 2010
-
All-optical Switch Consisting of Multimode Interferometer Combined with Metamaterials: Device Design Reviewed
Tomohiro Amemiya, Takahiko Shindo, Daisuke Takahashi, Nobuhiko Nishiyama, Shigehisa Arai
2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 2010
-
High Optical-Feedback Tolerance of Distributed Reflector Lasers With Wirelike Active Regions for Isolator-Free Operation Reviewed
Seung Hun Lee, Noriaki Tajima, Takahiko Shindo, Daisuke Takahashi, Nobuhiko Nishiyama, Shigehisa Arai
IEEE PHOTONICS TECHNOLOGY LETTERS 21 ( 20 ) 1529 - 1531 2009.10
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Properties of High index-Contrast Wired GaInAsP Waveguides with Benzocyclobutene on Si Substrate Reviewed
Haruki Enomoto, Keita Inoue, Tadashi Okumura, Hanh Duc Nguyen, Nobuhiko Nishiyama, Yuki Atsumi, Simon Kondo, Shigehisa Arai
2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) 347 - 350 2009
-
Room-Temperature CW Operation of Lateral Current Injection Lasers with Thin Film Lateral Cladding Layers Reviewed
Tadashi Okumura, Munetaka Kurokawa, Hitomi Ito, Daisuke Kondo, Nobuhiko Nishiyama, Shigehisa Arai
2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) 298 - + 2009
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Low-threshold and High-efficiency Operation of Distributed Reflector Laser with Wirelike Active Regions by Reduced Waveguide Loss Reviewed
SeungHun Lee, Takahiko Shindo, Daisuke Takahashi, Noriaki Tajima, Nobuhiko Nishiyama, Shigehisa Arai
2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) 174 - + 2009
-
Lateral Current Injection Type GaInAsP/InP DFB Lasers on SI-InP Substrate Reviewed
Tadashi Okumura, Munetaka Kurokawa, Daisuke Kondo, Hitomi Ito, Nobuhiko Nishiyama, Shigehisa Arai
2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) 178 - + 2009
-
III-V/SOI heterogeneous photonic integrated devices for optical interconnection in LSI Reviewed
Nobuhiko Nishiyama, Takeo Naruyama, Shigehisa Arai
2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) 210 - + 2009
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Variation of the morphology of strained AlGaInAs quantum wells with substrate orientation Reviewed
Catherine Caneau, Rajaram Bhat, Nobuhiko Nishiyama
JOURNAL OF CRYSTAL GROWTH 310 ( 7-9 ) 2345 - 2352 2008.4
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Optical Compensation of Fiber Nonlinearity Using Vertical Micro-cavity Saturable Absorber Reviewed
Satoshi Suda, Fumio Koyama, Nobuhiko Nishiyama, Catherine Caneau, Chung-En Zah
2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE 63 - 64 2008
-
RIE-PLASMA INDUCED OPTICAL PROPERTY DEGRADATION IN GaInAsP/InP QUANTUM-WELL STRUCTURES Reviewed
Munetaka Kurokawa, Dhanorm Plumwongrot, Koji Ozawa, Takeo Maruyama, Nobuhiko Nishiyama, Shigehisa Ara
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 256 - + 2008
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INJECTION TYPE GaInAsP/InP/Si DFB LASERS DIRECTLY BONDED ON SOI SUBSTRATE Reviewed
Tadashi Okumura, Takeo Maruyama, Hidenori Yonezawa, Nobuhiko Nishiyama, Shigehisa Arai
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 434 - + 2008
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BIT-ERROR-RATE MEASUREMENT OF GaInAsP/InP DISTRIBUTED REFLECTOR LASER WITH WIRELIKE ACTIVE REGIONS Reviewed
SeungHun Lee, Saeed Mahmud Ullah, Takahiko Shindo, Kyle Spencer Davis, Nobuhiko Nishiyama, Shigehisa Arai
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 216 - + 2008
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Tunable Optical Equalizer Based on 1.55 mu m VCSEL for Modulation Bandwidth Enhancement Reviewed
Satoshi Soda, Xiaoxue Zhao, Fumio Koyama, Connie J. Chang-Hasnain, Nobuhiko Nishiyama, Catherine Caneau, Chung-En Zah
2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE 179 - 180 2008
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Reduction of RIE induced damage of GaInAsP/InP DQW lasers fabricated by 2-step growth - art. no. 69090C
Plumwongrot, D., Kurokawa, M., Okumura, T., Nishimoto, Y., Maruyama, T., Nishiyama, N., Arai, S., Belyanin, AA, Smowton, PM
Novel in-Plane Semiconductor Lasers Vii 6909 2008
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Comparison of wafer bonding methods of membrane GaInAsp wired waveguides on Si substrate
Haruki Enomoto, Hai Duc Nguyen, Keita Inoue, Shinichi Sakamoto, Tadasshi Okumura, Nobuhiko Nishiyama, Shimon Kondo, Shigehisa Arai
2008 Int. Nano-Optoelectronics Workshop, iNOW 2008 in Cooperation With Int. Global-COE Summer School (Photonics Integration-Core Electronics: PICE) and 31st Int. Symposium on Optical Communications 289 - 290 2008
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Evaluation of Si wire waveguide fabricated by parallel plate RIE process using double layered EB resist containing C60 Reviewed
Keita Inoue, Nobuhiko Nishiyama, Haruki Enomoto, Shigeo Tamura, Takeo Maruyama, Shigehisa Arai
2008 Int. Nano-Optoelectronics Workshop, iNOW 2008 in Cooperation With Int. Global-COE Summer School (Photonics Integration-Core Electronics: PICE) and 31st Int. Symposium on Optical Communications 283 - 284 2008
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Length dependences of in-plane polarizations anisotropy in GaInAsP/InP quantum-wire structures fabricated by dry etching and regrowth process - art. no. 690205
Plumwongrot, D., Tamura, Y., Nishimoto, Y., Kurokawa, M., Okumura, T., Maruyama, T., Nishiyama, N., Arai, S., Eyink, KG, Szmulowicz, F, Huffaker, DL
Quantum Dots, Particles, and Nanoclusters V 6902 90205 - 90205 2008
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Bandwidth Enhancement with Tunable Optical Equalizer for High Speed Intensity Modulation Reviewed
Koichi Hasebe, XiaoUe Zhao, Takahiro Saksguchi, Fumio Koyama, Connie J. Chang-Hasnain, Nobuhiko Nishiyama, Catherine Caneau, Chung-En Zah
2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9 430 - + 2008
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80 degrees C CW operation of GaInAsP/InP membrane BH-DFB laser with air-bridge structure Reviewed
Hideyuki Naitoh, Shinichi Sakamoto, Mamoru Ohtake, Tadashi Okumura, Takeo Maruyama, Nobuhiko Nishiyama, Shigehisa Arai
2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS 476 - 479 2007
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Sub-milliampere operation of 1540 nm wavelength distributed reflector laser with wirelike active regions Reviewed
Saeed Mahmud Ullah, Ryo Suemitsu, Seung-Hun Lee, Masato Otake, Nobuhiko Nishiyama, Shigehisa Arai
2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS 506 - 509 2007
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IMPROVED TEMPERATURE DEPENDENCES OF GaInAsP/InP DFB LASERS WITH WIRELIKE ACTIVE REGIONS BY Bragg WAVELENGTH DETUNING Reviewed
Yoshifumi Nishimoto, Dhanorm Plumwongrot, Saeed Mahmud Ullah, Yosuke Tamura, Munetaka Kurokawa, Takeo Maruyama, Nobuhiko Nishiyama, Shigehisa Arai
2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS 513 - 516 2007
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High Speed Response of Optical Nonlinear Phase Shifter Based on 1.55 mu m VCSEL Reviewed
Satoshi Suda, Fumio Koyama, Nobuhiko Nishiyama, Catherine Caneau, Chung-En Zah
2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5 193 - + 2007
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Slow light waveguide detector slowing light in bragg reflector waveguide
Keisuke Kuroki, Go Hirano, Fumio Koyama, Koichi Hasebe, Takahiro Sakaguchi, Nobuhiko Nishiyama, Catherine Caneau, Chung-En Zah
2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007 2007
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Slow light modulator with Bragg reflector waveguide
Go Hirano, Fumio Koyama, Koichi Hasebe, Takahiro Sakaguchi, Nobuhiko Nishiyama, Catherine Caneau, Chung-En Zah
Optics InfoBase Conference Papers 2007
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Fabrication of GaInAsP/InP arbitrary shaped low dimensional quantum structures Reviewed
Dhanorm Plumwongrot, Yosuke Tamura, Takeo Maruyama, Nobuhiko Nishiyama, Shigehisa Arai
MICROPROCESSES AND NANOTECHNOLOGY 2007, DIGEST OF PAPERS 156 - 157 2007
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InP-based long wavelength VCSELs: Their characteristics and applications - art. no. 67820M
Nishiyama, N., Caneau, C., Sauer, M., Kobyakov, A., Zah, C. E., Nakano, Y
Optoelectronic Materials and Devices Ii 6782 2007
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Transient behaviour of nonlinear optical compensator based on vertical micro-cavity saturable absorber
Satoshi Suda, Fumio Koyama, Nobuhiko Nishiyama, Catherine Caneau, Chung-En Zah
2007 33rd European Conference and Exhibition of Optical Communication, ECOC 2007 2007
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Integration of front power monitor with distributed reflector laser through deep etched narrow groove isolation Reviewed
Ryo Suemitsu, Saeed Mahmud Ullah, Seung-Hun Lee, Masato Otake, Nobuhiko Nishiyama, Shigehisa Arai
2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS 47 - 50 2007
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10-Gbps 1.3 and 1.55-mu m InP-based VCSELs: 85 degrees C 10-km error-free transmission and room temperature 40-km transmission at 1.55-mu m with EDC
Nishiyama, N., Caneau, C., Downie, J. D., Sauer, M., Zah, C. -E., IEEE
2006 Optical Fiber Communication Conference/national Fiber Optic Engineers Conference, Vols 1-6 2006
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Optical nonlinear-effect compensator based on vertical-cavity saturable absorber
Satoshi Suda, Go Hirano, Fumio Koyama, Nobuhiko Nishiyama, Catherine Caneau, Chung-En Zah
2006 European Conference on Optical Communications Proceedings, ECOC 2006 2006
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High optical reflection resistance of 1.3-mu m InP-based isolator-free VCSELs: 10-Gbps error-free transmission under reflection
Nishiyama, N, Caneau, C, Tsuda, S, Guryanov, G, Hu, M, Bhat, R, Zah, CE, IEEE
2005 Pacific Rim Conference on Lasers and Electro-Optics 2005
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InP-based vertical cavity surface emitting lasers for 10G applications - art. no. 602001
Nishiyama, N, Caneau, C, Zah, CE, Tsuji, S, Buus, J, Luo, Y
Optoelectronic Materials and Devices for Optical Communications 6020 2001 - 2001 2005
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Polarization stable 1.3-m InP based VCSELs grown on (311)A substrates
Caneau, C, Nishiyama, N, Guryanov, G, Zah, CE, Hall, B, Bhat, R, IEEE
2005 International Conference on Indium Phosphide and Related Materials 2005
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All-optical regeneration based on vertical-cavity surface-emitting lasers
Onishi, Y, Nishiyama, N, Caneau, C, Koyama, F, Zah, CE, IEEE
2005 Pacific Rim Conference on Lasers and Electro-Optics 2005
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Measurement of intrinsic dynamics of SOA using outband optical modulation
Hu, M.H., Caneau, C., Liu, X., Nishiyama, N., Nguyen, H.K., Leblanc, H., Visovsky, N., Zah, C.-E.
Electronics Letters 40 ( 12 ) 2004
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Semiconductor optical amplifier for amplification and switching applications
Hu, MH, Caneau, C, Leblanc, H, Liu, VX, Nguyen, HK, Nishiyama, N, Tsuda, S, Zah, CE, ChangHasnain, CJ, Huang, D, Nakano, Y, Ren, XM
Apoc 2003: Asia-Pacific Optical and Wireless Communications; Materials, Active Devices, and Optical Amplifiers, Pts 1 and 2 5280 2004
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Temperature, modulation and reliability characteristics of 1.3 mu m-VCSELs on InP with AlGaInAs/InP lattice matched DBR
Nishiyama, N, Caneau, C, Hall, B, Guryanov, G, Hu, M, Liu, XS, Bhat, R, Zah, CE, Messe, K
2004 Ieee 19th International Semiconductor Laser Conference, Conference Digest 2004
-
High power 1060-nm raised-ridge strained single-quantum-well lasers
Zah, CE, Li, YB, Bhat, R, Song, KC, Visovsky, N, Nguyen, HK, Liu, XS, Hu, M, Nishiyama, N, Messe, K
2004 Ieee 19th International Semiconductor Laser Conference, Conference Digest 2004
-
1.3 and 1.5 mu m InP-based vertical cavity surface emitting lasers
Nishiyama, N, Caneau, C, Zah, CE, ieee
2004 Ieee Leos Annual Meeting Conference Proceedings, Vols 1 and 2 2004
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Long wavelength VCSELs on InP grown by MOCVD
Nishiyama, N, Caneau, C, Zah, CE, Dutta, AK, Awwal, AAS, Dutta, NK, Fujiura, K
Active and Passive Optical Components For Wdm Communications Iii 5246 2003
-
Optical near field by vertical cavity surface emitting laser Reviewed
Satoshi Shinada, Fumio Koyama, Nobuhiko Nishiyama, Masakazu Arai, Akihiro Matsutani, Kenya Goto, Kenichi Iga
Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi) 85 ( 2 ) 43 - 53 2002.2
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Temperature characteristics of 1.16 mu m highly strained GaInAs/GaAs VCSELs. Reviewed
T Kondo, M Arai, N Nishiyama, M Azuchi, A Matsutani, T Miyamoto, F Koyama, K Iga
VERTICAL-CAVITY SURFACE-EMITTING LASERS VI 4649 39 - 49 2002
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Wide wavelength control of highly strained GaInAs/GaAs QWs on patterned substrate for multiwavelength VCSEL array
Arai, M, Kondo, T, Nishiyama, N, Azuchi, M, Miyamoto, T, Koyama, F, Iga, K, Arakawa, Y, Hirayama, Y, Kishino, K, Yamaguchi, H
Compound Semiconductors 2001 2002
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Single high-order transverse mode surface emitting laser with micromachined surface relief
Satoshi Shinada, Fumio Koyama, Nobuhiko Nishiyama, Masakazu Arai
IEICE Transactions on Electronics E85-C ( 4 ) 995 - 1000 2002
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Nishiyama, N., Arai, M., Shinada, S., Azuchi, M., Miyamoto, T., Koyama, F., Iga, K.
IEEE Journal on Selected Topics in Quantum Electronics 7 ( 2 ) 242 - 248 2001.3
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GaInAs/GaAs Single Mode Vertical Cavity Surface Emitting Laser (VCSEL) Array on GaAs (311)B Reviewed
Masakazu Arai, Nobuhiko Nishiyama, Munechika Azuchi, Satoshi Shinada, Akihiro Matsutani, Fumio Koyama, Kenichi Iga
IEICE TRANS. ELECTRON. E84–C ( 3 ) 331 - 338 2001.3
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Shinada, S., Koyama, F., Nishiyama, N., Arai, M., Iga, K.
IEEE Journal on Selected Topics in Quantum Electronics 7 ( 2 ) 365 - 370 2001.3
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Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1mW Reviewed
T Kageyama, T Miyamoto, S Makino, Y Ikenaga, N Nishiyama, A Matsutani, F Koyama, K Iga
ELECTRONICS LETTERS 37 ( 4 ) 225 - 226 2001.2
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1.1-1.2 pin multiple-wavelength vertical cavity surface emitting laser array with highly strained GaInAs/GaAs QWs on patterned substrate
Arai, M, Kondo, T, Nishiyama, N, Matsutani, A, Miyamoto, T, Koyama, F, Iga, K, IEEE
Leos 2001: 14th Annual Meeting of the Ieee Lasers & Electro-Optics Society, Vols 1 and 2, Proceedings 2001
-
Far field pattern control of single high order transverse mode VCSEL with micronmachined surface relief
Shinada, S, Nishiyama, N, Arai, M, Koyama, F, IEEE
Leos 2001: 14th Annual Meeting of the Ieee Lasers & Electro-Optics Society, Vols 1 and 2, Proceedings 2001
-
Modulation characteristics of highly strained 1100 nm GaInAs/GaAs vertical cavity surface emitting laser on GaAs (311)B
Arai, M, Nishiyama, N, Azuchi, M, Matsutani, A, Koyama, F, Iga, K, IEEE
Cleo(R)/pacific Rim 2001, Vol Ii, Technical Digest 2001
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Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1mW Reviewed
S Makino, T Miyamoto, T Kageyama, Y Ikenaga, N Nishiyama, A Matsutani, F Koyama, K Iga
CLEO(R)/PACIFIC RIM 2001, VOL II, TECHNICAL DIGEST 608 - 609 2001
-
High-temperature operation up to 170 degrees C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy Reviewed
T Kageyama, T Miyamoto, S Makino, N Nishiyama, F Koyama, K Iga
IEEE PHOTONICS TECHNOLOGY LETTERS 12 ( 1 ) 10 - 12 2000.1
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Micromachined GaAlAs/GaAs vertical cavity for multiple wavelength filter and VCSEL array Reviewed
T Amano, F Koyama, N Nishiyama, A Matsutani, K Iga
LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2 56 - 57 2000
-
Single-transverse mode and stable-polarization operation of GaInAs/GaAs vertical-cavity surface-emitting laser array on GaAs (311)B Reviewed
M Arai, N Nishiyama, S Shinada, A Matsutani, F Koyama, K Iga
LEOS 2000 - IEEE ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS. 1 & 2 728 - 729 2000
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A highly strained (lambda=1.12 mu m) GaInAs/GaAs VCSEL on GaAs (311)B substrate exhibiting stable polarization
Nishiyama, N, Arai, M, Shinada, S, Miyamoto, T, Koyama, F, Iga, K, IEEE
2000 Ieee 17th International Semiconductor Laser Conference, Conference Digest 2000
-
Multiple wavelength micro-machined GaAlAs/GaAs vertical cavity filter array
Amano, T, Koyama, F, Nishiyama, N, Iga, K, IEEE
2000 Ieee/leos International Conference on Optical Mems 2000
-
Near-field characterization of micro-aperture surface emitting laser for near field data storage
Shinada, S, Koyama, F, Nishiyama, N, Arai, M, Iga, K, IEEE
Leos 2000 - Ieee Annual Meeting Conference Proceedings, Vols. 1 & 2 2000
-
Continuous-wave operation of GaInNAs/GaAs lasers grown by chemical beam epitaxy
Kageyama, T, Miyamoto, T, Makino, S, Nishiyama, N, Koyama, F, Iga, K, IEEE
2000 International Conference on Indium Phosphide and Related Materials, Conference Proceedings 2000
-
GaInNAs/GaAs quantum dots grown by chemical beam epitaxy
Makino, S., Miyamoto, T., Kageyama, T., Nishiyama, N., Koyama, F., Iga, K.
Journal of Crystal Growth 221 ( 1-4 ) 2000
-
Alas selective oxidation process
KOYAMA Fumio, NISHIYAMA Nobuhiko, ARAI Masakazu, IGA Kenichi
OYOBUTURI 69 ( 11 ) 1339 - 1340 2000
-
Lasing characteristics of InGaAs-GaAs polarization controlled vertical-cavity surface-emitting laser grown on GaAs (311) B substrate Reviewed
Nobuhiko Nishiyama, Akimasa Mizutani, Nobuaki Hatori, Masakazu Arai, Fumio Koyama, Kenichi Iga
IEEE Journal on Selected Topics in Quantum Electronics 5 ( 3 ) 530 - 536 1999.5
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P-type delta-doped InGaAs/GaAs quantum well vertical-cavity surface-emitting lasers Reviewed
Nobuaki Hatori, Akimasa Mizutani, Nobuhiko Nishiyama, Fumichika Motomura, Fumio Koyama, Kenichi Iga
Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi) 82 ( 4 ) 54 - 60 1999.4
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Single-transverse mode and stable-polarization operation under high-speed modulation of InGaAs-GaAs vertical-cavity surface-emitting laser grown on GaAs (311) B substrate Reviewed
N Nishiyama, A Mizutani, N Hatori, M Arai, F Koyama, K Iga
IEEE PHOTONICS TECHNOLOGY LETTERS 10 ( 12 ) 1676 - 1678 1998.12
-
A low-threshold polarization-controlled vertical-cavity surface-emitting laser grown on GaAs (311)B substrate Reviewed
A Mizutani, N Hatori, N Nishiyama, F Koyama, K Iga
IEEE PHOTONICS TECHNOLOGY LETTERS 10 ( 5 ) 633 - 635 1998.5
-
InGaAs/GaAs vertical-cavity surface emitting laser on GaAs (311)B substrate using carbon auto-doping Reviewed
A Mizutani, N Hatori, N Nishiyama, F Koyama, K Iga
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 37 ( 3B ) 1408 - 1412 1998.3
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An over 10-Gb/s transmission experiment using a p-type delta-doped InGaAs-GaAs quantum-well vertical-cavity surface-emitting laser Reviewed
N Hatori, A Mizutani, N Nishiyama, A Matsutani, T Sakaguchi, F Motomura, F Koyama, K Iga
IEEE PHOTONICS TECHNOLOGY LETTERS 10 ( 2 ) 194 - 196 1998.2
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P-type AlAs growth on a GaAs (311)B substrate using carbon auto-doping for low resistance GaAs/AlAs distributed Bragg reflectors Reviewed
A Mizutani, N Hatori, N Ohnoki, N Nishiyama, N Ohtake, F Koyama, K Iga
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 36 ( 11 ) 6728 - 6729 1997.11
-
Threshold reduction of p-type δ-doped InGaAs/GaAs quantum well lasers by using auto-doping of carbon
Hatori, N., Mizutani, A., Nishiyama, N., Koyama, F., Iga, K.
Electronics Letters 33 ( 12 ) 1997
-
MOCVD grown InGaAs/GaAs vertical cavity surface emitting laser on GaAs (311)B substrate
Mizutani, A., Hatori, N., Nishiyama, N., Koyama, F., Iga, K.
Electronics Letters 33 ( 22 ) 1997
MISC
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UV Nanoimprinting process development for large-scale integrated photonics
雨宮智宏, 岡田祥, 高橋直樹, 佐々木龍耶, 堀川剛, 渥美裕樹, 小田悠貴, 原悠太, 野田真司, 山本宏, UHRMANN Thomas, KNEIDINGER Andrea, 森莉紗子, 藤井恭, 浅井隆宏, 塩田大, 西山伸彦
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 84th 2023
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Observation of surface condition of silicon by Atmospheric Plasma Jet toward Heterogeneous Material-integrated Photonic Circuits
日原弘喜, 山内素明, 沖野晃俊, 沖野晃俊, 西山伸彦, 西山伸彦, 西山伸彦
応用物理学会春季学術講演会講演予稿集(CD-ROM) 70th 2023
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Investigation of Semiconductor Hydrophilicity by Atomosphere Pressure Plasma toward Heterogeneous Material-integrated Photonic Circuits
日原弘喜, EISSA Moataz, 山口圭太, 小野寺広夢, 大礒義孝, 雨宮智宏, 雨宮智宏, 沖野晃俊, 沖野晃俊, 西山伸彦, 西山伸彦, 西山伸彦
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 83rd 2022
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InP membrane integrated photonics research
Yuqing Jiao, Nobuhiko Nishiyama, Jos Van Der Tol, Jorn Van Engelen, Vadim Pogoretskiy, Sander Reniers, Amir Abbas Kashi, Yi Wang, Victor Dolores Calzadilla, Marc Spiegelberg, Zizheng Cao, Kevin Williams, Tomohiro Amemiya, Shigehisa Arai
Semiconductor Science and Technology 36 ( 1 ) 2020.10
-
Napat J. Jitcharoenchai, Nobuhiko Nishiyama, Tomohiro Amemiya, Shigehisa Arai
19th Coherent Laser Radar Conference, CLRC 2018 2018.1
-
Infrared invisibility cloak using rolled metamaterial film
Tomohiro Amemiya, Satoshi Yamasaki, Toru Kanazawa, Zhichen Gu, Daisuke Inoue, Atsushi Ishikawa, Nobuhiko Nishiyama, Takuo Tanaka, Tatsuhiro Urakami, Shigehisa Arai
Optics InfoBase Conference Papers 2018 2018
-
Design of Delay Structure for Optical Buffer using Metal Metamaterial above Si Waveguide
117 ( 263 ) 81 - 86 2017.10
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Ⅲ-Ⅴ/SOIハイブリッドデバイスとSi導波路接続用テーパ型モード変換器構造の検討 (光通信システム)
鈴木 純一, 永坂 久美, エイッサ モータズ, 立花 文人, 白 柳, 御手洗 拓矢, 雨宮 智宏, 西山 伸彦, 荒井 滋久
電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 117 ( 263 ) 13 - 18 2017.10
-
117 ( 192 ) 51 - 54 2017.8
-
Design of InP-based Membrane photodetector on Si for on-chip interconnection
116 ( 389 ) 145 - 150 2017.1
-
Evaluation of Michelson Interferometer Switch for Silicon-Waveguide Multi-wavelength Modulator
116 ( 388 ) 145 - 150 2017.1
-
Takuo Hiratani, Daisuke Inoue, Takahiro Tomiyasu, Kai Fukuda, Nagisa Nakamura, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2017 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR) 2017-January 1 - 2 2017
-
Novel a-Si on Garnet Nonreciprocal Phase Shift Optical Isolator with TE Mode Operation Reviewed
E. Ishida, K. Miura, Y. Shoji, H. Yokoi, T. Mizumoto, N. Nishiyama, S. Arai
2017 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC) 2017
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Impedance analysis of high-speed lateral-current-injection membrane DFB laser on silicon
Daisuke Inoue, Takuo Hiratani, Kai Fukuda, Takahiro Tomiyasu, Tomohiro Amemiya, Tomohiro Amemiya, Nobuhiko Nishiyama, Nobuhiko Nishiyama, Shigehisa Arai, Shigehisa Arai
Conference Digest - IEEE International Semiconductor Laser Conference 2016.12
-
High asymmetric light output characteristics of membrane distributed-reflector laser on Si substrate
Takuo Hiratani, Daisuke Inoue, Takahiro Tomiyasu, Kai Fukuda, Tomohiro Amemiya, Tomohiro Amemiya, Nobuhiko Nishiyama, Nobuhiko Nishiyama, Shigehisa Arai, Shigehisa Arai
Conference Digest - IEEE International Semiconductor Laser Conference 2016.12
-
Fabrication of GaInAsP/SOI Hybrid Fabry-Perot Laser with AlInAs-oxide Confinement Structure
116 ( 194 ) 9 - 14 2016.8
-
Low Threshold and High Speed Operation of 1.55-μm-Band Lasers by InP-Based Membrane Structure
44 ( 8 ) 508 - 513 2016.8
-
Analysis of plasmonic Mach-Zehnder modulator with metal taper structure embedded in FTC-EO polymer
Naoya Hojo, Tomohiro Amemiya, Zhichen Gu, Nobuhiko Nishiyama, Shigehisa Arai
2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 4 2016.1
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Room-temperature continuous-wave operation of λ/4-shifted membrane distributed feedback lasers
Takahiro Tomiyasu, Daisuke Inoue, Takuo Hiratani, Yuki Atsuji, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 4 2016.1
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Apodized amorphous silicon grating coupler with metal mirrors for 3D optical interconnection
Yuki Kuno, Joonhyun Kang, Kazuto Itoh, Yusuke Hayashi, Junichi Suzuki, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015 1 2016.1
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Waveguide Optical-to-THz Signal Converter using Ringshaped Microstripline
Satoshi Yamasaki, Akio Yasui, Tomohiro Amemiya, Kentaro Furusawa, Shinsuke Hara, Issei Watanabe, Norihiko Sekine, Nobuhiko Nishiyama, Akifumi Kasamatsu, Shigehisa Arai
2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) 2016
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B-10-15 Launch position dependence of transmission characteristics of quantum dots laser through 1.3-μm optimized multi-mode fibers
Kaneko T., Nishiyama N., Arai S.
Proceedings of the Society Conference of IEICE 2015 ( 2 ) 179 - 179 2015.8
-
C-4-2 Dynamic Behavior of 1.3-μm npn-AlGaInAs/InP Transistor Lasers under Collector-Base Voltage Modulation
Kaneko T., Yoshida T., Nishiyama N., Arai S.
Proceedings of the Society Conference of IEICE 2015 ( 1 ) 139 - 139 2015.8
-
C-3-19 Demonstration of a-Si:H/Ce:YIG Waveguide Optical Switch with Magneto-Optical Effect
Ishida Eiichi, Miura Kengo, Shoji Yuya, Mizumoto Tetsuya, Nishiyama Nobuhiko, Arai Shigehisa
Proceedings of the Society Conference of IEICE 2015 ( 1 ) 93 - 93 2015.8
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C-3-61 Crystal/amorphous Si waveguide-type couplers for heterogeneous optical circuits
Itoh Kazuto, Kuno Yuki, Hayashi Yusuke, Suzuki Junichi, Amemiya Tomohiro, Nishiyama Nobuhiko, Arai Shigehisa
Proceedings of the Society Conference of IEICE 2015 ( 1 ) 135 - 135 2015.8
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C-4-5 Room-temperature Continuous-wave Operation of λ/4-shifted GaInAsP/InP Membrane DFB Lasers
Inoue Daisuke, Hiratani Takuo, Tomiyasu Takahiro, Atsuji Yuki, Amemiya Tomohiro, Nishiyama Nobuhiko, Arai Shigehisa
Proceedings of the IEICE General Conference 2015 ( 1 ) 201 - 201 2015.2
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C-4-13 Monolithic Integration of λ/4-shifted DFB Laser and PIN-PD by Membrane BJB Structure
Inoue Daisuke, Hiratani Takuo, Tomiyasu Takahiro, Atsuji Yuki, Amemiya Tomohiro, Nishiyama Nobuhiko, Arai Shigehisa
Proceedings of the IEICE General Conference 2015 ( 1 ) 209 - 209 2015.2
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C-3-58 Coupling structures between crystal/amorphous Si waveguides for in-plane integration
Itoh Kazuto, Kuno Yuki, Kang JoonHyun, Hayashi Yusuke, Suzuki Junichi, Amemiya Tomohiro, Nishiyama Nobuhiko, Arai Shigehisa
Proceedings of the IEICE General Conference 2015 ( 1 ) 182 - 182 2015.2
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Demonstration of a-Si/Ce:YIG Waveguide Optical Isolator and Design for Polarization-Independent Operation
Ishida Eiichi, Miura Kengo, Hirasawa Takayoshi, Shoji Yuya, Kan JoonHyun, Okada Yukihiro, Yokoi Hideki, Nishiyama Nobuhiko, Arai Shigehisa, Mizumoto Tetsuya
Technical report of IEICE. LQE 114 ( 432 ) 41 - 45 2015.1
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Optical Transmission between III-V Chips on Si by Using Photonic Wire Bonding
GU Zhichen, AMEMIYA Tomohiro, ISHIKAWA Atsushi, ATSUMI Yuki, KANG JoonHyun, HIRATANI Takuo, HAYASHI Yusuke, SUZUKI Junichi, NISHIYAMA Nobuhiko, TANAKA Takuo, ARAI Shigehisa
Technical report of IEICE. OPE 114 ( 377 ) 21 - 26 2014.12
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Optical Transmission between III-V Chips on Si by Using Photonic Wire Bonding
GU Zhichen, AMEMIYA Tomohiro, ISHIKAWA Atsushi, ATSUMI Yuki, KANG JoonHyun, HIRATANI Takuo, HAYASHI Yusuke, SUZUKI Junichi, NISHIYAMA Nobuhiko, TANAKA Takuo, ARAI Shigehisa
Technical report of IEICE. LQE 114 ( 378 ) 21 - 26 2014.12
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Daisuke Inoue, Jieun Lee, Takuo Hiratani, Yuki Atsuji, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
Conference Digest - IEEE International Semiconductor Laser Conference 32 - 33 2014.12
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Takuo Hiratani, Yuki Atsuji, Jieun Lee, Daisuke Inoue, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
Conference Digest - IEEE International Semiconductor Laser Conference 111 - 112 2014.12
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AMEMIYA Tomohiro, MURAI Eijun, Gu Zhichen, NISHIYAMA Nobuhiko, ARAI Shigehisa
Technical report of IEICE. OCS 114 ( 281 ) 169 - 174 2014.10
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C-3-49 Numerical Analysis of Apodized Grating Coupler Loaded with Metal Mirror for Optical Fiber Connection
Kang JoonHyun, Kuno Yuki, Hayashi Yusuke, Suzuki Junichi, Amemiya Tomohiro, Nishiyama Nobuhiko, Arai Shigehisa
Proceedings of the Society Conference of IEICE 2014 ( 1 ) 146 - 146 2014.9
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C-4-14 GaInAsP/InP Membrane Distributed-Feedback Laser Integrated with Waveguides on Si Substrate
Inoue Daisuke, Lee Jieun, Hiratani Takuo, Atsuji Yuki, Amemiya Tomohiro, Nishiyama Nobuhiko, Arai Shigehisa
Proceedings of the Society Conference of IEICE 2014 ( 1 ) 168 - 168 2014.9
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C-4-12 Optical Modulator by the Pearmeability-controlled Metamaterial
Amemiya T, Kanazawa T, Ishikawa A, Kang J.H, Gu Z, Nishiyama N, Miyamoto Y, Tanaka T, Arai S
Proceedings of the Society Conference of IEICE 2014 ( 1 ) 166 - 166 2014.9
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C-3-50 Wide-band Grating Couples with Metal Mirrors for 3D Silicon Optical Interconnection
Kuno Yuki, Kang JoonHyun, Hayashi Yusuke, Suzuki Junichi, Amemiya Tomohiro, Nishiyama Nobuhiko, Arai Shigehisa
Proceedings of the Society Conference of IEICE 2014 ( 1 ) 147 - 147 2014.9
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C-4-13 Optical interconnection between III-V chips on Si by using photonic wire bonding
Gu Zhichen, Amemiya Tomohiro, Ishikawa Atsushi, Kang Junhyung, Hiratani Takuo, Hayashi Yusuke, Suzuki Jun-ichi, Nishiyama Nobuhiko, Tanaka Takuo, Arai Shigehisa
Proceedings of the Society Conference of IEICE 2014 ( 1 ) 167 - 167 2014.9
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C-4-15 GaInAsP/SOI Hybrid Laser with Ring-resonator-type Reflector Fabricated by Plasma Activated Bonding
Hayashi Y, Suzuki J, Inoue, Kang J, Kuno Yuki, Amemiya Tomohiro, Nishiyama Nobuhiko, Arai Shigehisa
Proceedings of the Society Conference of IEICE 2014 ( 1 ) 169 - 169 2014.9
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三浦謙悟, 平澤崇佳, KAN Joon Hyun, 庄司雄哉, 岡田幸大, 横井秀樹, 西山伸彦, 荒井滋久, 水本哲弥
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 75th ROMBUNNO.18A-A18-7 2014.9
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オンチップ光配線に向けたシリコン温度無依存波長フィルター (特集 シリコン・フォトニクスの展望)
渥美 裕樹, 西山 伸彦, 荒井 滋久
O plus E : Optics・Electronics 36 ( 9 ) 1020 - 1024 2014.9
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Integrated waveguide type membrane DFB lasers by BCB bonding on Si substrate
INOUE Daisuke, LEE Jieun, HIRATANI Takuo, ATSUJI Yuki, AMEMIYA Tomohiro, NISHIYAMA Nobuhiko, ARAI Shigehisa
IEICE technical report. Component parts and materials 114 ( 185 ) 17 - 22 2014.8
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Integrated waveguide type membrane DFB lasers by BCB bonding on Si substrate
INOUE Daisuke, LEE Jieun, HIRATANI Takuo, ATSUJI Yuki, AMEMIYA Tomohiro, NISHIYAMA Nobuhiko, ARAI Shigehisa
IEICE technical report. Reliability 114 ( 183 ) 17 - 22 2014.8
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東京工業大学量子ナノエレクトロニクス研究センター : 荒井・西山研究室
荒井 滋久, 西山 伸彦, 雨宮 智宏
光アライアンス 25 ( 5 ) 54 - 60 2014.5
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C-3-12 Apodized Grating Couplers between Si Multilayer Waveguides with Metal Mirrors
Kuno Yuki, Kang JoonHyun, Atsumi Yuki, Hayashi Yusuke, Suzuki Junichi, Amemiya Tomohiro, Nishiyama Nobuhiko, Arai Shigehisa
Proceedings of the IEICE General Conference 2014 ( 1 ) 167 - 167 2014.3
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C-4-32 Energy Cost Dependence on Electrode Position in Lateral-Current-Injection (LCI) Semiconductor Membrane Distributed Reflector Lasers
Hiratani T., Atsuji Y., Lee J., Doi K., Inoue D., Amemiya T., Nishiyama N., Arai S.
Proceedings of the IEICE General Conference 2014 ( 1 ) 268 - 268 2014.3
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Optical Isolator with Amorphous Silicon Waveguide Core on Magneto-Optical Garnet
K. Miura, T. Hirasawa, J. Kang, Y. Shoji, Y. Okada, H. Yokoi, N. Nishiyama, S. Arai, T. Mizumoto
2014 IEEE 11TH INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS (GFP) 116 - 117 2014
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Permeability control on InP-based photonic integration platform using metamaterial
AMEMIYA Tomohiro, KANAZAWA Toru, ISHIKAWA Atsushi, KANG JoonHyun, NISHIYAMA Nobuhiko, MIYAMOTO Yasuyuki, TANAKA Takuo, ARAI Shigehisa
Technical report of IEICE. OPE 113 ( 370 ) 45 - 50 2013.12
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Kang JoonHyun, Atsumi Yuki, Hayashi Yusuke, Suzuki Junichi, Kuno Yuki, Amemiya Tomohiro, Nishiyama Nobuhiko, Arai Shigehisa
Technical report of IEICE. OPE 113 ( 370 ) 25 - 30 2013.12
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High Efficiency Grating Coupler for Multilayer Amorphous Silicon Waveguides
Kang JoonHyun, Atsumi Yuki, Hayashi Yusuke, Suzuki Junichi, Amemiya Tomohiro, Nishiyama Nobuhiko, Arai Shigehisa
Proceedings of the Society Conference of IEICE 2013 ( 1 ) 136 - 136 2013.9
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Design of ultra-low power consumption semiconductor membrane laser for on-chip optical interconnection
Hiratani T, Doi K, Atsuji Y, Amemiya T, Nishiyama N, Arai S
Proceedings of the Society Conference of IEICE 2013 ( 1 ) 217 - 217 2013.9
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C-3-41 Grating Couplers between Multilayer Amorphous Silicon Waveguides with Metal Mirrors
Kang JoonHyun, Atsumi Yuki, Sifer Takeshi, Hayashi Yusuke, Amemiya Tomohiro, Nishiyama Nobuhiko, Arai Shigehisa
Proceedings of the IEICE General Conference 2013 ( 1 ) 201 - 201 2013.3
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Butt-Joint Built-in (BJB) Structure for Membrane Photonic Integration
Daisuke Inoue, Jieun Lee, Takahiko Shindo, Mitsuaki Futami, Kyohei Doi, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) 2013
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Lee Jieun, Yamahara Yoshiaki, Atsumi Yuki, Nishiyama Nobuhiko, Arai Shigehisa
Technical report of IEICE. OPE 112 ( 371 ) 39 - 44 2012.12
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Low Threshold Operation of GaInAsP/InP Lateral Current Injection Type Membrane Laser
Shindo Takahiko, Futami Mitsuaki, Doi Kyohei, Amemiya Tomohiro, Nishiyama Nobuhiko, Arai Shigehisa
Technical report of IEICE. LQE 112 ( 356 ) 9 - 14 2012.12
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C-3-93 Taper-coupled LCl membrane laser with GaInAsP wire waveguide
Lee J., Yamahara Y., Shindo T., Futami M., Doi K., Nishiyama N., Arai S.
Proceedings of the Society Conference of IEICE 2012 ( 1 ) 210 - 210 2012.8
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C-4-15 Characterization of GaInAsP Lateral Junction Waveguide Type Membrane Photodiode
Yamahara Y., Futami M., Shindo T., Lee J., Doi K., Amemiya T., Nishiyama N., Arai S.
Proceedings of the Society Conference of IEICE 2012 ( 1 ) 225 - 225 2012.8
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C-3-59 Metal Mirror Reinforced Grating Couplers between Multilayer Amorphous Silicon Waveguides
Kang JoonHyun, Atsumi Yuki, Sifer Takeshi, Amemiya Tomohiro, Nishiyama Nobuhiko, Arai Shigehisa
Proceedings of the Society Conference of IEICE 2012 ( 1 ) 176 - 176 2012.8
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Current Injecting Operation and Thermal Analysis of GaInAsP/InP Membrane DFB Laser
DOI Kyohei, SHINDO Takahiko, FUTAMI Mitsuaki, AMEMIYA Tomohiro, NISHIYAMA Nobuhiko, ARAI Shigehisa
IEICE technical report. Reliability 112 ( 180 ) 41 - 46 2012.8
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C-4-17 Direct Modulation Bandwidth of Lateral Current Injection Membrane Lasers
Shindo T., Futami M., Shinno K., Koguchi T., Amemiya T., Nishiyama N., Arai S.
Proceedings of the IEICE General Conference 2012 ( 1 ) 268 - 268 2012.3
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C-3-39 Wavelength Drop Filter by Athermal Si-Slot Ring Resonator Embedded with Benzocyclobutene
Oda Manabu, Atumi Yuki, Sifer Takeshi, Kang HoonHyun, Amemiya Tomohiro, Nishiyama Nobuhiko, Arai Shigehisa
Proceedings of the IEICE General Conference 2012 ( 1 ) 188 - 188 2012.3
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C-3-38 Grating Couplers between Multilayer Amorphous Silicon Waveguides
Kang JoonHyun, Nishikawa Yoshihiro, Atsumi Yuki, Oda Manabu, Amemiya Tomohiro, Nishiyama Nobuhiko, Arai Shigehisa
Proceedings of the IEICE General Conference 2012 ( 1 ) 187 - 187 2012.3
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C-3-91 InP-based Plasmonic Waveguide with Side Metal Layer for Tight Confinement
Murai Eijun, Amemiya Tomohiro, Shindo Takahiko, Kang Junhyung, Myoga Seiji, Nishiyama Nobuhiko, Arai Shigehisa
Proceedings of the IEICE General Conference 2012 ( 1 ) 240 - 240 2012.3
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Improved quantum efficiency of GaInAsP/InP top air-clad lateral current injection lasers
Mitsuaki Futami, Keisuke Shinno, Takahiko Shindo, Kyohei Doi, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2012 Optical Interconnects Conference, OIC 2012 34 - 35 2012
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Modulation bandwidth of GaInAsP/InP lateral-current-injection membrane laser
Takahiko Shindo, Mitsuaki Futami, Kyohei Doi, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
Conference Digest - IEEE International Semiconductor Laser Conference 106 - 107 2012
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Room-temperature continuous-wave operation of a 1.3-μm npn-AlGaInAs/InP transistor laser
Noriaki Sato, Mizuki Shirao, Takashi Sato, Masashi Yukinari, Nobuhiko Nishiyama, Tomohiro Amemiya, Shigehisa Arai
Conference Digest - IEEE International Semiconductor Laser Conference 18 - 19 2012
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Amorphous Silicon grating-type layer-to-layer couplers for intra-chip connection
Joon Hyun Kang, Yoshihiro Nishikawa, Yuki Atsumi, Manabu Oda, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai
2012 Optical Interconnects Conference, OIC 2012 52 - 53 2012
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Fabrication process of multi-layered amorphous silicon wire waveguides
KANG JoonHyun, ATSUMI Yuki, ODA Manabu, NISHIYAMA Nobuhiko, ARAI Shigehisa
Technical report of IEICE. OPE 111 ( 358 ) 27 - 32 2011.12
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Daisuke Takahash, Seunghun Lee, Takahiko Shindo, Keisuke Shinno, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai, Shigehisa Arai
Conference Proceedings - International Conference on Indium Phosphide and Related Materials 2011.12
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Lateral current injection distributed feedback laser with wirelike active regions
Takahiko Shindo, Tadashi Okumura, Mitsuaki Futam, Ryo Osabe, Hitomi Ito, Takayuki Koguchi, Tomohiro Amemiya, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai, Shigehisa Arai
Conference Proceedings - International Conference on Indium Phosphide and Related Materials 2011.12
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Lasing operation of lateral-current-injection membrane DFB laser with surface grating
T. Shindo, M. Futami, T. Okumura, R. Osabe, T. Koguchi, T. Amemiya, N. Nishiyama, S. Arai
16th Opto-Electronics and Communications Conference, OECC 2011 287 - 288 2011.10
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M. Futami, T. Shindo, T. Okumura, R. Osabe, D. Takahashi, T. Koguchi, T. Amemiya, N. Nishiyama, S. Arai
16th Opto-Electronics and Communications Conference, OECC 2011 468 - 469 2011.10
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CI-3-6 InP/Si bonding technologies and device characteristics for on-chip optical interconnection
Amemiya Tomohiro, Nishiyama Nobuhiko, Arai Shigehisa
Proceedings of the Society Conference of IEICE 2011 ( 2 ) "SS - 26"-"SS-27" 2011.8
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Silicon/3-5 semiconductor hybrid integration type optical devices
Optronics 30 ( 2 ) 117 - 120 2011.2
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Semiconductor DFB laser with plasmonic metal layers for subwavelength confinement of light
Tomohiro Amemiya, Takahiko Shindo, Daisuke Takahashi, Seiji Myoga, Nobuhiko Nishiyama, Shigehisa Arai
2011 Int. Quantum Electron. Conf., IQEC 2011 and Conf. Lasers and Electro-Optics, CLEO Pacific Rim 2011 Incorporating the Australasian Conf. Optics, Lasers and Spectroscopy and the Australian Conf. 863 - 865 2011
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Bandwidth enhancement of injection-locked distributed reflector lasers with wirelike active regions
SeungHun Lee, Devang Parekh, Takahiko Shindo, Weijian Yang, Peng Guo, Daisuke Takahashi, Nobuhiko Nishiyama, Connie J. Chang-Hasnain, Shigehisa Arai
OPTICS EXPRESS 18 ( 16 ) 16370 - 16378 2010.8
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Athermal Wavelength Characteristics of Si Slot Ring Resonator Embedded with Benzocyclobutene for Optoelectronic Integrated Circuits
Yuki Atsumi, Keita Inoue, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 49 ( 5 ) 050206-1-3 2010.5
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Continuous Wave Operation of Thin Film Lateral Current Injection Lasers Grown on Semi-Insulating InP Substrate
Tadashi Okumura, Hitomi Ito, Daisuke Kondo, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 49 ( 4 ) 040205 2010
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Continuous Wave Operation of Thin Film Lateral Current Injection Lasers Grown on Semi-Insulating InP Substrate
Tadashi Okumura, Hitomi Ito, Daisuke Kondo, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 49 ( 4 ) 040205 2010
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Magnetic Interaction at Optical Frequencies in InP-based Waveguide Device Combined with Metamaterial
AMEMIYA Tomohiro, SHINDO Takahiko, TAKAHASHI Daisuke, NISHIYAMA Nobuhiko, ARAI Shigehisa
109 ( 401 ) 123 - 128 2010
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Low-Threshold and High-Efficiency Operation of Distributed Reflector Laser With Wirelike Active Regions
Takahiko Shindo, SeungHun Lee, Daisuke Takahashi, Noriaki Tajima, Nobuhiko Nishiyama, Shigehisa Arai
IEEE PHOTONICS TECHNOLOGY LETTERS 21 ( 19 ) 1414 - 1416 2009.10
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Preliminary Experiment on Direct Media Conversion from a 1.55 mu m Optical Signal to a Sub-Terahertz Wave Signal Using Photon-Generated Free Carriers
Mizuki Shirao, Yuki Numajiri, Ryo Yokoyama, Nobuhiko Nishiyama, Masahiro Asada, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 48 ( 9 ) 090203-1-3 2009.9
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Preliminary Experiment on Direct Media Conversion from a 1.55 mu m Optical Signal to a Sub-Terahertz Wave Signal Using Photon-Generated Free Carriers
Mizuki Shirao, Yuki Numajiri, Ryo Yokoyama, Nobuhiko Nishiyama, Masahiro Asada, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 48 ( 9 ) 090203-1-3 2009.9
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Lateral current injection GaInAsP/InP laser on semi-insulating substrate for membrane-based photonic circuits
Tadashi Okumura, Munetaka Kurokawa, Mizuki Shirao, Daisuke Kondo, Hitomi Ito, Nobuhiko Nishiyama, Takeo Maruyama, Shigehisa Arai
OPTICS EXPRESS 17 ( 15 ) 12564 - 12570 2009.7
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Wavelength Modulation Over 500 kHz of Micromechanically Tunable InP-Based VCSELs With Si-MEMS Technology
Tetsuo Yano, Hiroki Saitou, Nobuhiko Kanbara, Ryuichiro Noda, Shin-ichirou Tezuka, Naoyuki Fujimura, Masaya Ooyama, Tetsuya Watanabe, Takaaki Hirata, Nobuhiko Nishiyama
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 15 ( 3 ) 528 - 534 2009.5
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CI-2-4 Status of semiconductor lasers and emitting devices on Si substrate
Nishiyama Nobuhiko, Maruyama Takeo, Arai Shigehisa
Proceedings of the IEICE General Conference 2009 ( 1 ) "SS - 34"-"SS-35" 2009.3
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Injection-type GaInAsP-InP-Si distributed-feedback laser directly bonded on silicon-on-insulator substrate
Tadashi Okumura, Takeo Maruyama, Hidenori Yonezawa, Nobuhiko Nishiyama, Shigehisa Arai
IEEE Photonics Technology Letters 21 ( 5 ) 283 - 285 2009.3
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Loss Reduction of Si Wire Waveguide Fabricated by Edge-Enhancement Writing for Electron Beam Lithography and Reactive Ion Etching Using Double Layered Resist Mask with C-60
Keita Inoue, Dhanorm Plumwongrot, Nobuhiko Nishiyama, Shinichi Sakamoto, Haruki Enomoto, Shigeo Tamura, Takeo Maruyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 48 ( 3 ) 030208 2009.3
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High Optical Feedback-Tolerance of Distributed Reflector Lasers with Wire-like Active Regions for High Speed Isolator-Free Operation
SeungHun Lee, Noriaki Tajima, Takahiko Shindo, Daisuke Takahashi, Nobuhiko Nishiyama, Shigehisa Arai
2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5 21 ( 20 ) 1419 - + 2009
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Injection-type GaInAsP-InP-Si Distributed-feedback Laser Directly Bonded on Silicon-on-insulator Substrate
Tadashi Okumura, Takeo Maruyama, HIDENORI YONEZAWA, Nobuhiko Nishiyama, SHIGEHISA ARAI
IEEE Photonics Technol. Lett. 21 ( 5 ) 283 - 285 2009
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光通信帯における左手系光制御素子の設計
雨宮 智宏, 進藤 隆彦, 高橋 大佑, 西山 伸彦, 荒井 滋久
109 ( 353 ) 19 - 24 2009
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Tunable Optical Equalizer Using Diffraction Grating Filters
Xiaoxue Zhao, Koichi Hasebe, Takahiro Sakaguchi, Fumio Koyama, Connie J. Chang-Hasnain, Nobuhiko Nishiyama, Catherine Caneau, Chung-En Zah
IEEE PHOTONICS TECHNOLOGY LETTERS 20 ( 17-20 ) 1590 - 1592 2008.9
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Electrically pumped GaInAsP/InP DFB Laser on SOI Substrate by Direct Wafer Bonding
OKUMURA Tadashi, MARUYAMA Takeo, YONEZAWA Hidenori, NISHIYAMA Nobuhiko, ARAI Shigehisa
108 ( 113 ) 45 - 50 2008.6
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GaInAsP/InP distributed reflector lasers and integration of front power monitor by using lateral quantum confinement effect
Saeed Mahmud Ullah, SeungHun Lee, Ryo Suemitsu, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS 47 ( 6 ) 4558 - 4565 2008.6
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C-4-27 Status of InP-based vertical-cavity surface-emitting lasers
Nishiyama Nobuhiko, Caneau Catherine, Zah Chung-en
Proceedings of the IEICE General Conference 2008 ( 1 ) 310 - 310 2008.3
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C-4-29 Direct Modulation Characteristics of Distributed Reflector Laser with Wirelike Active Regions
Lee Seung Hun, Ullah Saeed Mahmud, Shindo Takahiko, Davis Kyle Spencer, Nishiyama Nobuhiko, Arai Shigehisa
Proceedings of the IEICE General Conference 2008 ( 1 ) 312 - 312 2008.3
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High speed response of nonlinear optical phase-shifter based on vertical micro-cavity saturable absorber
Satoshi Suda, Fumio Koyama, Nobuhiko Nishiyama, Catherine Caneau, Chung-En Zah
IEICE ELECTRONICS EXPRESS 5 ( 4 ) 131 - 135 2008.2
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GaInAsP/InP membrane buried heterostructure distributed feedback laser with air-bridge structure
Hideyuki Naitoh, Shinichi Sakamoto, Mamoru Ohtake, Tadashi Okumura, Takeo Maruyama, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 46 ( 45-49 ) L1158 - L1160 2007.12
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85 degrees C continuous-wave operation of GaInAsP/InP-membrane buried heterostructure distributed feedback lasers with polymer cladding layer
Shinichi Sakamoto, Hideyuki Naitoh, Mamoru Ohtake, Yoshifumi Nishimoto, Takeo Maruyama, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 46 ( 45-49 ) L1155 - L1157 2007.12
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Bragg wavelength detuning in GaInAsP/InP distributed feedback lasers with wirelike active regions
Dhanorm Plumwongrot, Yoshifumi Nishimoto, Saeed Mahmud Ullah, Yosuke Tamura, Mumetaka Kurokawa, Takeo Maruyama, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 46 ( 45-49 ) L1090 - L1092 2007.12
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85 degrees C continuous-wave operation of GaInAsP/InP-membrane buried heterostructure distributed feedback lasers with polymer cladding layer
Shinichi Sakamoto, Hideyuki Naitoh, Mamoru Ohtake, Yoshifumi Nishimoto, Takeo Maruyama, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 46 ( 45-49 ) L1155 - L1157 2007.12
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Low-threshold-current operation of high-mesa stripe distributed reflector laser emitting at 1540nm
Saeed Mahmud Ullah, Ryo Suemitsu, SeungHun Lee, Masato Otake, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 46 ( 41-44 ) L1068 - L1070 2007.11
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Very high electric isolation resistance between distributed reflector laser and front power monitor through deeply etched narrow groove
SeungHun Lee, Ryo Suemitsu, Saeed Mahmud Ullah, Masato Otake, Nobuhiko Nishiyama, Shigehisa Arai
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 46 ( 36-40 ) L954 - L956 2007.10
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Strongly index-coupled membrane BH-DFB lasers with surface corrugation grating
Shinichi Sakamoto, Hideyuki Naitoh, Mamoru Ohtake, Yoshifumi Nishimoto, Shigeo Tamura, Takeo Maruyama, Nobuhiko Nishiyama, Shigehisa Arai
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 13 ( 5 ) 1135 - 1141 2007.9
-
GaInAsP/InP Membrane BH-DFB Laser with Air Bridge Structure
NAITOH Hideyuki, SAKAMOTO Shinichi, OHTAKE Mamoru, OKUMURA Tadashi, MARUYAMA Takeo, NISHIYAMA Nobuhiko, ARAI Shigehisa
IEICE technical report 107 ( 124 ) 19 - 22 2007.6
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GaInAsP/InP Membrane BH-DFB Laser with Air Bridge Structure
NAITOH Hideyuki, SAKAMOTO Shinichi, OHTAKE Mamoru, OKUMURA Tadashi, MARUYAMA Takeo, NISHIYAMA Nobuhiko, ARAI Shigehisa
IEICE technical report 107 ( 125 ) 19 - 22 2007.6
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ULLAH Saeed Mahmud, SUEMITSU Ryo, LEE Seung-Hun, OTAKE Masato, NISHIYAMA Nobuhiko, ARAI Shigehisa
IEICE technical report 106 ( 404 ) 61 - 65 2006.12
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Micromachined VCSELs and resonant photodetectors with controlled temperature dependence
JANTO Wiganes, HASEBE Koichi, NISHIYAMA Nobuhiko, CANEAU Catherine, SAKAGUCHI Takahiro, MATSUTANI Akihiro, KOYAMA Fumio, ZAH Chung-En
IEICE technical report 106 ( 213 ) 119 - 122 2006.8
-
Optical nonlinear phase-shifter using vertical micro-cavity with saturable absorber
SUDA Satoshi, HIRANO Go, KOYAMA Fumio, NISHIYAMA Nobuhiko, CANEAU Catherine, ZAH Chung-En
IEICE technical report 106 ( 133 ) 39 - 42 2006.6
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All-optical regeneration using transverse mode switching in long-wavelength vertical-cavity surface-emitting lasers
Y Onishi, N Nishiyama, C Caneau, F Koyama, CE Zah
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 45 ( 17-19 ) L467 - L468 2006.5
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107-mW low-noise green-light emission by frequency doubling of a reliable 1060-nm DFB semiconductor laser diode
HK Nguyen, MH Hu, N Nishiyama, NJ Visovsky, YB Li, KC Song, XS Liu, J Gollier, LC Hughes, R Bhat, CE Zah
IEEE PHOTONICS TECHNOLOGY LETTERS 18 ( 5-8 ) 682 - 684 2006.3
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High-power high-modulation-speed 1060-nm DBR lasers for green-light emission
MH Hu, HK Nguyen, KC Song, YB Li, NJ Visovsky, XS Liu, N Nishiyama, S Coleman, LC Hughes, J Gollier, W Miller, R Bhat, CE Zah
IEEE PHOTONICS TECHNOLOGY LETTERS 18 ( 1-4 ) 616 - 618 2006.1
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CS-4-9 Long-wavelength AlGaInAs VCSELs for low-cost 10G modules
Nishiyama Nobuhiko, Caneau Catherine, Zah Chung-en
Proceedings of the Society Conference of IEICE 2005 ( 1 ) "S - 49"-"S-50" 2005.9
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All-optical inverter based on long-wavelength vertical-cavity surface-emitting laser
Y Onishi, N Nishiyama, C Caneau, F Koyama, CE Zah
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 11 ( 5 ) 999 - 1005 2005.9
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Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs-InP DBR grown by MOCVD
N Nishiyama, C Caneau, B Hall, G Guryanov, MH Hu, XS Liu, MJ Li, R Bhat, CE Zah
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS 11 ( 5 ) 990 - 998 2005.9
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10-Gb/s error-free transmission under optical reflection using isolator-free 1.3-mu m InP-based vertical-cavity surface-emitting lasers
N Nishiyama, C Caneau, S Tsuda, G Guryanov, M Hu, R Bhat, CE Zah
IEEE PHOTONICS TECHNOLOGY LETTERS 17 ( 8 ) 1605 - 1607 2005.8
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10-Gb/s error-free transmission under optical reflection using isolator-free 1.3-mu m InP-based vertical-cavity surface-emitting lasers
N Nishiyama, C Caneau, S Tsuda, G Guryanov, M Hu, R Bhat, CE Zah
IEEE PHOTONICS TECHNOLOGY LETTERS 17 ( 8 ) 1605 - 1607 2005.8
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Low-voltage operation of vertical-cavity intensity modulator using InP-based surface-emitting laser structure
A Onodera, Y Onishi, N Nishiyama, C Caneau, F Koyama, CE Zah
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 43 ( 6B ) L806 - L807 2004.6
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Dynamic behavior of an all-optical inverter using transverse-mode switching in 1.55-mu m vertical-cavity surface-emitting lasers
Y Onishi, N Nishiyama, C Caneau, F Koyama, CE Zah
IEEE PHOTONICS TECHNOLOGY LETTERS 16 ( 5 ) 1236 - 1238 2004.5
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Dynamic behavior of an all-optical inverter using transverse-mode switching in 1.55-mu m vertical-cavity surface-emitting lasers
Y Onishi, N Nishiyama, C Caneau, F Koyama, CE Zah
IEEE PHOTONICS TECHNOLOGY LETTERS 16 ( 5 ) 1236 - 1238 2004.5
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Nonlinear optical input-output characteristics of 1.55 mu m injection-locked vertical-cavity surface-emitting lasers
Y Onishi, F Koyama, N Nishiyama, C Caneau, CE Zah
APPLIED PHYSICS LETTERS 84 ( 17 ) 3247 - 3249 2004.4
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Nonlinear optical input-output characteristics of 1.55 mu m injection-locked vertical-cavity surface-emitting lasers
Y Onishi, F Koyama, N Nishiyama, C Caneau, CE Zah
APPLIED PHYSICS LETTERS 84 ( 17 ) 3247 - 3249 2004.4
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Light-induced transverse-mode switching of a vertical-cavity surface-emitting laser for optical signal processing
Y Onishi, N Nishiyama, C Caneau, F Koyama, CE Zah
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 43 ( 2A ) L187 - L189 2004.2
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High efficiency long wavelength VCSEL on InP grown by MOCVD
N Nishiyama, C Caneau, G Guryanov, XS Liu, M Hu, CE Zah
ELECTRONICS LETTERS 39 ( 5 ) 437 - 439 2003.3
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Monolithic formation of metal organic chemical vapor deposition grown multi-wavelength vertical cavities with highly strained GaInAs/GaAs quantum wells on GaAs (311)B
M Arai, N Nishiyama, M Azuchi, A Matsutani, F Koyama, K Iga
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 40 ( 6A ) 4056 - 4057 2001.6
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Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter
AMANO Takeru, KOYAMA Fumio, NISHIYAMA Nobuhiko, MATSUTANI Akihiro, IGA Kenichi
IEICE transactions on electronics 84 ( 5 ) 678 - 684 2001.5
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Temperature Insensitive Micromachined GaAlAs/GaAs Vertical Cavity Wavelength Filter
AMANO Takeru, KOYAMA Fumio, NISHIYAMA Nobuhiko, MATSUTANI Akihiro, IGA Kenichi
IEICE transactions on communications 84 ( 5 ) 1304 - 1310 2001.5
-
1.12 mu m polarization controlled highly strained GaInAs vertical-cavity surface-emitting lasers on GaAs(311)B by metal organic chemical vapor deposition
N Nishiyama, M Arai, S Shinada, M Azuchi, A Matsutani, T Miyamoto, F Koyama, K Iga
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 40 ( 5A ) L437 - L439 2001.5
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1.12 mu m polarization controlled highly strained GaInAs vertical-cavity surface-emitting lasers on GaAs(311)B by metal organic chemical vapor deposition
N Nishiyama, M Arai, S Shinada, M Azuchi, A Matsutani, T Miyamoto, F Koyama, K Iga
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 40 ( 5A ) L437 - L439 2001.5
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Monolithic formation of metal organic chemical vapor deposition grown multi-wavelength vertical cavities with highly strained GaInAs/GaAs quantum wells on GaAs (311)B
Masakazu Arai, Nobuhiko Nishiyama, Munechika Azuchi, Akihiro Matsutani, Fumio Koyama, Kenichi Iga
Jpn. J. Appl. Phys. 40 ( 6A ) 4056 - 4057 2001
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Arai, M., Nishiyama, N., Azuchi, M., Matsutani, A., Koyama, F., Iga, K.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 ( 6 A ) 4056 - 4057 2001
-
Growth and optical properties of highly strained GaInAs/GaAs quantum wells on (311)B GaAs by MOCVD
N Nishiyama, M Arai, S Shinada, T Miyamoto, F Koyama, K Iga
JOURNAL OF CRYSTAL GROWTH 221 530 - 534 2000.12
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Continuous wave operation of 1.26 mu m GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition
S Sato, N Nishiyama, T Miyamoto, T Takahashi, N Jikutani, M Arai, A Matsutani, F Koyama, K Iga
ELECTRONICS LETTERS 36 ( 24 ) 2018 - 2019 2000.11
-
Continuous wave operation of 1.26 mu m GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition
S Sato, N Nishiyama, T Miyamoto, T Takahashi, N Jikutani, M Arai, A Matsutani, F Koyama, K Iga
ELECTRONICS LETTERS 36 ( 24 ) 2018 - 2019 2000.11
-
1.15 mu m lasing operation of highly strained GaInAs/GaAs on GaAs (311)B substrate with high characteristic temperature (T-0=210 K)
N Nishiyama, M Arai, S Shinada, T Miyamoto, F Koyama, K Iga
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 39 ( 10B ) L1046 - L1047 2000.10
-
Highly stable single polarization operation of GaInAs/GaAs vertical-cavity surface-emitting laser on GaAs (311)B substrate under high-speed modulation
M Arai, N Nishiyama, S Shinada, A Matsutani, F Koyama, K Iga
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 39 ( 8B ) L858 - L860 2000.8
-
2 x 2 multiwavelength micromachined AlGaAs/GaAs vertical cavity filter array with wavelength control layer
T Amano, F Koyama, N Nishiyama, K Iga
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 39 ( 7A ) L673 - L674 2000.7
-
AlAs oxidation system with H2O vaporizer for oxide-confined surface emitting lasers
M Arai, N Nishiyama, S Shinada, F Koyama, K Iga
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 39 ( 6A ) 3468 - 3469 2000.6
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Vertical-cavity surface-emitting laser array on GaAs(311)B substrate exhibiting single-transverse mode and stable-polarization operation
M Arai, N Nishiyama, S Shinada, A Matsutani, F Koyama, K Iga
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 39 ( 6B ) L588 - L590 2000.6
-
Multi-oxide layer structure for single-mode operation in vertical-cavity surface-emitting lasers
N Nishiyama, M Arai, S Shinada, K Suzuki, F Koyama, K Iga
IEEE PHOTONICS TECHNOLOGY LETTERS 12 ( 6 ) 606 - 608 2000.6
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Temperature-insensitive micromachined AlGaAs-GaAs vertical cavity filter
T Amano, F Koyama, N Nishiyama, K Iga
IEEE PHOTONICS TECHNOLOGY LETTERS 12 ( 5 ) 510 - 512 2000.5
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Micromachined semiconductor vertical cavity for temperature insensitive surface emitting lasers and optical filters
F Koyama, T Amano, N Furukawa, N Nishiyama, M Arai, K Iga
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 39 ( 3B ) 1542 - 1545 2000.3
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Micromachined AlGaAs/GaAs vertical cavity filter with adjustable temperature dependence and wavelength trimming ability
T Amano, F Koyama, N Furukawa, N Nishiyama, A Matsutani, K Iga
ELECTRONICS LETTERS 36 ( 1 ) 74 - 76 2000.1
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1.15 mu m lasing operation of highly strained GaInAs/GaAs on GaAs (311)B substrate with high characteristic temperature (T-0=210 K)
Nishiyama, N, Arai, M, Shinada, S, Miyamoto, T, Koyama, F, Iga, K
Japanese Journal of Applied Physics Part 2-Letters 39 ( 10B ) L1046 - L1047 2000
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1.15μm lasing operation of highly strained GaInAs/GaAs on GaAs (311)B substrate with high characteristic temperature (T<small>0</small>=210 K)
Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga
Jpn. J. Appl. Phys. 39 ( 10B ) L1046 - L1047 2000
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1.15μm lasing operation of highly strained GaInAs/GaAs on GaAs (311)B substrate with high characteristic temperature (T<small>0</small>=210 K)
Nobuhiko Nishiyama, Masakazu Arai, Satoshi Shinada, Tomoyuki Miyamoto, Fumio Koyama, Kenichi Iga
Jpn. J. Appl. Phys. 39 ( 10B ) L1046 - L1047 2000
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Vertical-cavity surface-emitting laser array on GaAs(311)B substrate exhibiting single-transverse mode and stable-polarization operation
Masakazu Arai, Nobuhiko Nishiyama, Satoshi Shinada, Akihiro Matsutani, Fumio Koyama, Kenichi Iga
Jpn. J. Appl. Phys. 39 ( 6B ) L588 - L590 2000
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AlAs oxidation system with H_2_O vaporizer for oxide-confined surface emitting lasers
Masakazu Arai, Nobuhiko Nishiyama, Satoshi Shinada, Fumio Koyama, Kenichi Iga
Jpn. J. Appl. Phys. 39 ( 6A ) 3468 - 3469 2000
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2X2 multiwavelength micromachined AlGaAs/GaAs vertical cavity filter array with wavelength control layer
Takeru Amano, Fumio Koyama, Nobuhiko Nishiyama, Kenichi Iga
Jpn. J. Appl. Phys. 39 ( 7A ) L673 - L674 2000
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Koyama, F., Amano, T., Furukawa, N., Nishiyama, N., Arai, M., Iga, K.
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 39 ( 3 B ) 1542 - 1545 2000
-
Temperature-insensitive micromachined AlGaAs-GaAs vertical cavity filter
Takeru Amano, Fumio Koyama, Nobuhiko Nishiyama, Kenichi Iga
IEEE Photon. Technol. Lett. 12 ( 5 ) 510 - 512 2000
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Temperature Insensitive Micromachined Add/Drop Filter and Surface Emitting Laser
99 ( 465 ) 19 - 24 1999.11
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Temperature Insensitive Micromachined Add/Drop Filter and Surface Emitting Laser
99 ( 467 ) 19 - 24 1999.11
-
Fabrication of micro-aperture surface emitting laser for near field optical data storage
S Shinada, F Koyama, N Nishiyama, M Arai, K Goto, K Iga
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 38 ( 11B ) L1327 - L1329 1999.11
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Micro-Aperture GaAs Surface Emitting Laser for Near Field Optical Data Storage
SHINADA S., KOYAMA F., NISHIYAMA N., ARAI M., GOTO K., IGA K.
1999 290 - 291 1999.9
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GaInNAs/GaAs Quantum Well Lasers Grown by Chemical Beam Epitaxy
KAGEYAMA T., MIYAMOTO T., MAKINO S., NISHIYAMA N., KOYAMA F., IGA K.
1999 298 - 299 1999.9
-
Near-field Analysis of Micro-Aperture Surface Emitting Laser
SHINADA S., KOYAMA F., SUZUKI K., NISHIYAMA N., IGA K.
1999 ( 1 ) 19 - 24 1999.1
-
MIZUTANI Akimasa, HATRI Nobuaki, NISHIYAMA Nobuhiko, KOYAMA Fumio, IGA Kenichi
The Transactions of the Institute of Electronics,Information and Communication Engineers. C-(0xF9C1) 81 ( 8 ) 460 - 465 1998.8
-
A completely single-mode and single-polarization vertical-cavity surface emitting lasers grown on GaAs (311)B substrate
N Nishiyama, A Mizutani, N Hatori, F Koyama, K Iga
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 37 ( 6A ) L640 - L642 1998.6
-
An MOCVD grown low threshold polarization controlled vertical-cavity surface emitting laser on GaAs (311)B
MIZUTANI Akimasa, HATORI Nobuaki, NISHIYAMA Nobuhiko, KOYAMA Fumio, IGA Kenichi
Technical report of IEICE. LQE 97 ( 543 ) 31 - 36 1998.2
-
A completely single-mode and single polarization vertical-cavity surface emitting lasers grown on GaAs (311)B substrate
Nobuhiko Nishiyama, Akimasa Mizutani, Nobuaki Hatori, Fumio Koyama, Kenichi Iga
Jpn. J. Appl. Phys. 37 ( 6A ) L640 - L642 1998
Presentations
-
Wire-Length Dependence of Polarization Anisotropy in GaInAsP/InP Quantum-Wire Structures
2007
-
10-Gbps 1.3 and 1.55-μm InP-based VCSELs: 85°C 10-km Error-free Transmission and Room Temp. 40-km Transmission at 1.55-μm with EDC
Optical Fiber Conference 2006 2006
-
All-optical Polarization Controller Using Elliptical-Apertured 1.5μm VCSEL
Conference on Lasers and Electro-Optics（CLEO 2006） 2006
-
Optical Nonliner Phase Shifter Using Vertical Microcavity with Saturable Absorber
Conference on Lasers and Electro-Optics, CLEO 2006 2006
-
Micromachined Resonant-Cavity Photodetectors with Low Temperature Dependence
Extended Abstracts (The 67nd Autumn Meeting) of Jpn. Soc. Appl. Phys. 2006
-
Tunable Optical Delay and Nonlinear Phase Shift using 1.55 μm VCSEL
EEE ISLC2006 2006
-
Low threshold current DR laser with wirelike active regions and integration of EAM with high electrical isolation
電子情報通信学会 レーザ・量子エレクトロニクス研究会 2006
-
InP系温度無依存面発光レーザのためのバイモルフ効果を用いた片持ち梁の製作・評価
2006年春季第53回応用物理学関連連合講演会 2006
-
All-optical Polarization Controller Using Elliptical-Apertured 1.5μm VCSEL
Conference on Lasers and Electro-Optics（CLEO 2006） 2006
-
Optical Nonliner Phase Shifter Using Vertical Microcavity with Saturable Absorber
Conference on Lasers and Electro-Optics, CLEO 2006 2006
-
Athermal operation of 1.55 μm InP-based VCSEL with thermally-actuated cantilever structure
20th International Semiconductor Laser Conference 2006
-
Injection-locked vertical-cavity surface-emitting lasers for optical signal processing
OptoElectronics and Communications Conference/International Conference on Optical Internet 2004
-
Low voltage operation of vertical-cavity intensity modulator using InP-based surface-emitting laser structure
OptoElectronics and Communications Conference/International Conference on Optical Internet 2004
-
Dynamic behavior of 1.55 μm vertical-cavity surface-emitting laser with external light injection
Conference on Lasers & Electro-Optics/International Quantum Electronics Conference 2004
-
Injection-locked vertical-cavity surface-emitting lasers for optical signal processing
OptoElectronics and Communications Conference/International Conference on Optical Internet 2004
-
Low voltage operation of vertical-cavity intensity modulator using InP-based surface-emitting laser structure
OptoElectronics and Communications Conference/International Conference on Optical Internet 2004
-
Dynamic behavior of 1.55 μm vertical-cavity surface-emitting laser with external light injection
Conference on Lasers & Electro-Optics/International Quantum Electronics Conference 2004
-
Athermal operation of 1.55 μm InP-based VCSEL with thermally-actuated cantilever structure
20th International Semiconductor Laser Conference 2006
-
マイクロマシン構造を用いた温度無依存共振型フォトディテクタ
2006年秋季第67回応用物理学会学術講演会 2006
-
Tunable Optical Delay and Nonlinear Phase Shift using 1.55 μm VCSEL
EEE ISLC2006 2006
-
Low threshold current DR laser with wirelike active regions and integration of EAM with high electrical isolation
電子情報通信学会 レーザ・量子エレクトロニクス研究会 2006
-
Optical inverter using a vertical-cavity surface-emitting laser with external light injection
he 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society 2003
-
Lasing characteristic of 1.2μm highly strained GaInAs/GaAs vertical cavity surface emitting lasers
The 62nd Autumn Meeting of The Japan Society of Applied Physics 2001
-
Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1mW
The Pacific Rim Conf. on Lasers and Electro-Optics 2001 2001
-
Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1mW
Electron. Lett. 2001
-
Highly strained GaInAs/GaAs quantum well vertical-cavity surface-emitting laser on GaAs (311)B substrate for stable polarization operation
IEEE J. Select. Top. Quantum Electron. 2001
-
Analysis and fabrication of micro-aperture GaAs/GaAlAs surface emitting laser for near field optical data storage
IEEE J. Select. Top. Quantum Electron. 2001
-
Optical inverter using a vertical-cavity surface-emitting laser with external light injection
he 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society 2003
-
Single high-order transverse mode surface emitting laser with micromachined surface relief
IEICE 2002
-
Single high-order transverse mode surface emitting laser with micromachined surface relief
IEICE 2002
-
Far field pattern control of single high order transverse mode VCSEL with micromachined surface relief
IEEE Lasers and Electro-Optics Society 2001 Annual Meeting 2001
-
Investigation of Regrowth Interface Quality of AlGaInAs/InP Buried Heterostructure Lasers
22nd International Conference on Indium Phosphide and Related Materials (IPRM2010) 2010
-
Structure Dependence on the Modulation Efficiency of a Long Wavelength Laser
2010
-
Investigation of Bonding Strength and Photoluminescence Properties of InP/Si Surface Activated Bonding
International Conference on Indium Phosphide and Related Materials 2010
-
Lateral Junction Waveguide Type Photodiode for Membrane Photonic Circuits
International Conference on Indium Phosphide and Related Materials 2010
-
Stabilization on Fabrication of GaInAsP/InP Membrane Structure on SOI waveguide by Surface Activated Bonding
2010
-
Direct Measurements of Characteristics of GaInAsP/InP Bragg Gratings with Periodically Etched Quantum Wells
The 37th International Symposium on Compound Semiconductors (ISCS 2010) 2010
-
Dynamic Characteristics of Lateral Current Injection Laser
The 37th International Symposium on Compound Semiconductors (ISCS 2010) 2010
-
Large Signal Analysis of AlGaInAs/InP Laser Transistor
Conference on Lasers and Electro Optics/International Quantum Electronics Conference (CLEO/IQEC) 2010 2010
-
Thin-Film GaInAsP/InP Lateral Current Injection Type Fabry-Perot Laser Improved Quantum Efficiency Operation
The 22th International Conference on Indium Phosphide and Related Materials (IPRM2010) 2010
-
Si/III-V Hybrid Optical Devices and Related Technologies
2010
-
Effect of Thermal Cleaning for Regrowth Interface Quality
2010
-
Low power consumption semiconductor lasers for optical interconnections
15th OptoElectronics and Communications Conference 2010
-
First Lasing Operation of Injection Type Membrane GaInAsP DFB Laser With Lateral Current Injection BH Structure
the 22nd IEEE International Semiconductor Laser Conference 2010
-
Loss Measurement of Multiple Layer a-Si Waveguides
SSDM 2010
-
Current Status of III-V/Si Hybrid Optical Devices
15th OproElectronics and Communications Conference 2010
-
Loss Reduction of Si-Slot Ring Resonator Embedded with Benzocyclobutene
2010
-
Theoretical analysis of integrated twin guide laser on SOI substrate
2010
-
Lateral Current Injection DFB Laser with a-Si Surface Grating
2010
-
Fabrication of GaInAsP/InP Membrane Structure on SOI waveguide by Surface
2010
-
Lasing Operation of an Injection Type Membrane DFB Laser
2010
-
All-optical Switch Consisting of Multimode Interferometer Combined with Metamaterials: Device Design
The 22nd International Conference on Indium Phosphide and Related Materials (IPRM-2010) 2010
-
Lateral Current Injection Type GaInAsP/InP DFB Laser with a-Si Surface Grating
The 23rd Annual Meeting of the IEEE Photonics Society 2010
-
細線状活性層を有する分布反射型(DR)レーザの光注入同期
IEICE-LQE2009-169 2010
-
メタマテリアルを有するInP導波路型デバイスにおける光周波数領域での磁気応答
第57回春季応用物理学関係連合講演会 2010
-
Characteristics of Transmittance and Reflectance Spectra of GaInAsP/InP DBR with wirelike active region
2010
-
Improvement of the bonding quality of GaInAsP Membrane Stricture toword III-V Membrane Photonic Circuit on Si substrate with BCB Bonding
2010
-
光注入同期による活性層分離型分布反射型レーザの変調帯域増大
電子情報通信学会 2010年総合大会 2010
-
Bandwidth Enhancement of Distributed Reflector Lasers at Low Bias Current by Optical Injection Locking
OFC/NFOEC 2010 2010
-
BCB埋め込みSiスロット導波路の光伝搬損失の評価
第57回応用物理学関係連合講演会 2010
-
SOI基板上多層a-Si細線導波路の伝搬特性の評価
2010
-
Investigation of Regrowth Interface Quality of AlGaInAs/InP Buried Heterostructure Lasers
22nd International Conference on Indium Phosphide and Related Materials (IPRM2010) 2010
-
AlGaInAs量子井戸活性層を有する長波長帯レーザトランジスタ変調効率の構造依存性
第57回応用物理学関係連合講演会 2010
-
Investigation of Bonding Strength and Photoluminescence Properties of InP/Si Surface Activated Bonding
International Conference on Indium Phosphide and Related Materials 2010
-
Lateral Junction Waveguide Type Photodiode for Membrane Photonic Circuits
2010
-
AlGaInAs/InP 埋め込みヘテロ構造レーザにおける再成長界面品質のサーマルクリーニング依存性
2010年春季 第57回 応用物理学関係連合講演会 2010
-
表面活性化貼付法を用いたInP/Si接合とフォトルミネッセンス特性
第57回春季応用物理学会学術講演会 2010
-
横方向電流注入レーザの変調特性
第57回応用物理学関係連合講演会 2010
-
Low-threshold and High-efficiency Operation of Distributed Reflector Laser with Wirelike Active Regions by Reduced Waveguide Loss
The 21st International Conference on Indium Phosphide and Related Materials (IPRM'09) 2009
-
BCB埋め込みSiスロット導波路による波長フィルタの温度無依存化の検討
第56回春季応用物理学会学術講演会 2009
-
細線状活性層を有する分布反射型(DR)レーザの低しきい値・高効率動作
第56回応用物理学関係連合講演会 2009
-
光生成キャリア変調による光信号からサブテラヘルツ信号への直接変換速度特性
第56回春季応用物理学会学術講演会 2009
-
横方向電流注入型ファブリ・ペローレーザの室温連続動作
第56回応用物理学関係連合講演会 2009
-
半絶縁性基板上の横方向注入型DFB レーザ
第56回応用物理学関係連合講演会 2009
-
ブラック反射鏡導恥デバイスのスローライト伝搬の評価
第56回応用物理学関係連合講演会 2009
-
細線状活性層を有する分布反射型レーザの反射戻り光耐性
電子情報通信学会 2009年総合大会 2009
-
Si上BCB貼付型強光閉じ込めGaInAsP細線導波路の特性
第56回春季応用物理学会学術講演会 2009
-
シリコン基板上半導体レーザ・発光デバイスの現状
2009年電子情報通信学会総合大会 2009
-
BCB埋め込みSiスロット導波路構造を用いた温度無依存波長フィルタ
電子情報通信学会技術研究報告 2009
-
Athermal Wavelength Property of Si-Slot Ring Resonator Embedded with Benzocyclobutene
The 6th International Conference on Group Ⅳ Photonics 2009
-
High Optical Feedback-Tolerance of Distributed Reflector Lasers with Wire-like Active Regions for High Speed Isolator-Free Operation
Conference on Lasers and Electro Optics/International Quantum Electronics Conference (CLEO/IQEC) 2009 2009
-
横方向電流注入型ファブリ・ペローレーザの微分量子効率改善
第70回応用物理学会学術講演 2009
-
High External Feedback Tolerance of Distributed Reflector Lasers with Wirelike Active Regions
International Nano-Optoelectronics Workshop, 2009 (i-NOW 2009) 2009
-
III-V/SOI heterogeneous photonic integrated devices for optical interconnection in LSI
IPRM 2009 2009
-
Room-Temperature CW Operation of Lateral Current Injection Lasers with Thin Film Lateral
2009
-
細線状活性層を有する分布反射型(DR)レーザの進展 ～ 高効率・低しきい値動作と強戻り光耐性 ～
IEICE-LQE2009-3 2009
-
Properties of High index-Contrast Wired GaInAsP Waveguides with Benzocyclobutene on Si Substrate
The 21th International Conference on Indium Phosphide and Related Materials (IPRM2009) 2009
-
Lateral Current Injection Type GaInAsP/InP DFB Lasers on SI-InP Substrate
The 21st International Conference on Indium Phosphide and Related Materials (IPRM2009) 2009
-
Dynamic Characteristics of Lateral Current Injection Laser
The 37th International Symposium on Compound Semiconductors (ISCS 2010) 2010
-
Large Signal Analysis of AlGaInAs/InP Laser Transistor
Conference on Lasers and Electro Optics/International Quantum Electronics Conference (CLEO/IQEC) 2010 2010
-
Si/III-Vハイブリッド光デバイスと関連技術
日本学術振興会半導体界面制御技術第１５４委員会研究会 2010
-
AlGaInAs/InP 埋め込みヘテロ構造レーザにおけるサーマルクリーニング中雰囲気の再成長界面品質に対する影響
2010年秋季 第71回 応用物理学会学術講演会 2010
-
Low power consumption semiconductor lasers for optical interconnections
15th OptoElectronics and Communications Conference 2010
-
First Lasing Operation of Injection Type Membrane GaInAsP DFB Laser With Lateral Current Injection BH Structure
the 22nd IEEE International Semiconductor Laser Conference 2010
-
Loss Measurement of Multiple Layer a-Si Waveguides
SSDM 2010
-
Direct Measurements of Characteristics of GaInAsP/InP Bragg Gratings with Periodically Etched Quantum Wells
The 37th International Symposium on Compound Semiconductors (ISCS 2010) 2010
-
Thin-Film GaInAsP/InP Lateral Current Injection Type Fabry-Perot Laser Improved Quantum Efficiency Operation
The 22th International Conference on Indium Phosphide and Related Materials (IPRM2010) 2010
-
Current Status of III-V/Si Hybrid Optical Devices
15th OproElectronics and Communications Conference 2010
-
Stabilization on Fabrication of GaInAsP/InP Membrane Structure on SOI waveguide by Surface Activated Bonding
2010
-
SOI基板上集積二重導波路構造レーザの理論検討
第71回応用物理学会学術講演 2010
-
a-Si表面回折格子を用いた横方向電流注入型DFBレーザ
第71回応用物理学会学術講演 2010
-
Left-handed Light Controlling Device for Optical Frequency
International Symposium on Quantum Nanophotonics and Nanoelectronics (ISQNN-2009) 2009
-
Lateral Current Injection Type GaInAsP/InP DFB Laser with a-Si Surface Grating
The 23rd Annual Meeting of the IEEE Photonics Society 2010
-
Characterization of Slow Light in Bragg Reflector Waveguide Device
The 56th Spring Meeting of Japan Society of Applied Physics 2009
-
External Optical Feedback Tolerance of Distributed Reflector Lasers with Wirelike Active Regions
2009
-
BCB埋め込みスロットリング共振器の低損失化
第71回応用物理学会学術講演 2010
-
表面活性化接合法によるSOI導波路上GaInAsP薄膜構造の形成
第70回応用物理学会学術講演 2010
-
GaInAsP/InP細線状活性層を有するDBRの透過反射スペクトル特性
第71回応用物理学会学術講演 2010
-
III-V族薄膜光回路実現のためのSi基板上BCB貼付GaInAsP薄膜構造品質の改善
2010年秋季 応用物理学会学術講演会 2010
-
半導体薄膜DFBレーザの電流注入動作
第70回応用物理学会学術講演 2010
-
Status of semiconductor lasers and emitting devices of Si Substrate
2009
-
III-V/SOI heterogeneous photonic integrated devices for optical interconnection in LSI
IPRM 2009 2009
-
Room-Temperature CW Operation of Lateral Current Injection Lasers with Thin Film Lateral
2009
-
Progress in Distributed-Reflector(DR) Lasers with Wirelke Active Regions
IEICE-LQE2009-3 2009
-
Properties of High index-Contrast Wired GaInAsP Waveguides with Benzocyclobutene on Si Substrate
The 21th International Conference on Indium Phosphide and Related Materials (IPRM2009) 2009
-
Room-Temperature Continuous-Wave Operation of Lateral Current Injection Type Fabry-Perot Lasers
2009
-
Lateral Current Injection Type DFB Lasers on Semi-Insulating Substrate
2009
-
Lateral Current Injection Type GaInAsP/InP DFB Lasers on SI-InP Substrate
The 21st International Conference on Indium Phosphide and Related Materials (IPRM2009) 2009
-
Low-threshold and High-efficiency Operation of Distributed Reflector Laser with Wirelike Active Regions by Reduced Waveguide Loss
The 21st International Conference on Indium Phosphide and Related Materials (IPRM'09) 2009
-
Low Threshold and High Efficiency Operation of Distributed-Reflector Laser with Wirelike Active Regions
2009
-
Properties of High Index Contrast Wired GaInAsP Waveguides with Benzocyclobutene on Si Substrate
2009
-
Athermal Wavelength Operation of Si-Slot Ring Resonator Embedded with Benzocyclobutene
2009
-
Improved Quantum Efficiency of Lateral Current Injection Type Fabry-Perot Lasers
International Symposium on Quantum Nanophotonics and Nanoelectronics 2009
-
Left-handed Light Controlling Device for Optical Frequency
International Symposium on Quantum Nanophotonics and Nanoelectronics (ISQNN-2009) 2009
-
Athermal Wavelength Filter by Si-Slot Waveguide Embedded with Benzocyclobute
2009
-
Improved Differential Quantum Efficiency of Lateral Current Injection Type Fabry-Perot Lasers
2009
-
Atheoretical analysis of AlGaInAs laser transistors by rate equations
2009
-
Lateral Junction Type Photodiode Toward Membrane Photonic Integrated Circuits
2009
-
High Optical Feedback-Tolerance of Distributed Reflector Lasers with Wire-like Active Regions for High Speed Isolator-Free Operation
Conference on Lasers and Electro Optics/International Quantum Electronics Conference (CLEO/IQEC) 2009 2009
-
High External Feedback Tolerance of Distributed Reflector Lasers with Wirelike Active Regions
International Nano-Optoelectronics Workshop, 2009 (i-NOW 2009) 2009
-
Athermal Wavelength Property of Si-Slot Ring Resonator Embedded with Benzocyclobutene
The 6th International Conference on Group Ⅳ Photonics 2009
-
Observation of RIE Induced Damage on Lasing Properties of GaInAsP/InP MQW Lasers Fabricated by 2-step Growths
The 34th International Symposium on Compound Semiconductors (ISCS2007) 2007
-
Direct Modulation of Sub-Teraherz Waves by 1.55-μm Optical Signal
iNOW2008 2008
-
Electrically pumped GaInAsP/InP DFB Laser on SOI Substrate by Direct Wafer Bonding
2008
-
Injection Type GaInAsP/InP/Si DFB Lasers Directly Bonded on SOI Substrate
The 20th International Conference on Indium Phosphide and Related Materials (IPRM2008) 2008
-
Bit-Error-Rate Measurement of GaInAsP/InP Distributed Reflector Laser with Wirelike Active Regions
The 20th International Conference on Indium Phosphide and Related Materials (IPRM2008) 2008
-
Bandwidth Enhancement of Directly Modulated DFB Lasers and EML Lasers using Optical Equalizers
Conference on Lasers and Electro-Optics, CLEO 2008
-
RIE-plasma Induced Optical Property Degradation in GaInAsP/InP Quantum-Well Structures
The 20th International Conference on Indium Phosphide and Related Materials (IPRM2008) 2008
-
A sub-mA Threshold Current Operation of Distributed-Reflector (DR) Laser
Nano-Optoelectronics Workshop, 2008 (i-NOW 2008) 2008
-
Comparison of Wafer Bonding Methods of Membrane GaInAsP WiredWaveguides on Si Substrate
2008 International Nano-Optoelectronics Workshop 2008
-
GaInAsP/InP Lateral Current Injection Laser Grown on SI-InP Substrate
2008
-
Enhancement of Modulation Bandwidth in Distributed Reflector Lasers
Nano-Optoelectronics Workshop, 2008 (i-NOW 2008) 2008
-
Evaluation of Si Wire Waveguide Fabricated by Parallel Plate RIE Process using Double Layered EB Resist Containing C60
iNOW 2008 2008
-
Low threshold current distributed-reflector laser with phase-shifted active DFB section and passive DBR section
2008
-
Direct Conversion from Optical Signal to THz and Sub-THz Signals by Photogenerated Carrier Modulation
2008
-
Injection Type GaInAsP/InP DFB Lasers
2008 International Nano-Optoelectronics Workshop 2008
-
The Base Layer Design of Long Wavelength Laser Transistor
2008
-
Enhancement of Modulation Bandwidth in DR Lasers by Self-Injection-Locking
2008
-
Top-Air-Cladding GaInAsP/InP Lateral Current Injection Type Lasers
IEEE Nanotechnology Materials and Device Conference 2008 2008
-
Loss Reduction of SiWireWaveguide on SOI Substrate Prepared by Parallel Plate RIE using Double Layered Resist Mask with C60
The IEEE Nanotechnology Materials and Devices Conference 2008 2008
-
Direct Conversion to Sub-THz Signal from 1.55-μm Optical Signal Using Photon-Generated Free-Carriers
2008 LEOS Annual Meeting 2008
-
Wavelength Modulation over 500 kHz of Micromechanically TunableInP-Based VCSELs with Si-MEMS Technology
21th International Semiconductor Laser Conference 2008
-
Optical Compensation of Fiber Nonlinearity Using Vertical Micro-cavity Saturable Absorber
ISLC2008 2008
-
Tunable Optical Equalizer Based on l.55nm VCSEL for Modulation Bandwidth Enhancement
The 69th Autumn Meeting of JSAP 2008
-
Direct Conversion from Optical Signal to Terahertz signal Using Photon Generated Free Carriers
Technical Group on Electron Devices 2008
-
InP-based long wavelength VCSELs: Their Characteristics and Applications
Asia-Pacific Optical Communications 2007 2008
-
Length dependencies of in-plane polarizations anisotropy in GaInAsP/InP quantum-wire structures fabricated by dry etching and regrowth process
OPTO2008 (part of SPIE Photonics West 2008) 2008
-
Lateral current injection type GaInAsP laser on Semi-insulating Substrate for Semiconductor Membrane Laser
2008
-
直接貼付法によるSOI基板上注入形GaInAsP/InP DFB レーザ
第55回応用物理学関係連合講演会 2008
-
低温現像によるGaInAsP/InP量子細線構造の線幅ばらつきの低減
第55回応用物理学関係連合講演会 2008
-
C60含有と非含有EBレジストZEPの重ね塗りによるSi導波路ドライエッチング形状の向上
第55回応用物理学関係連合講演会 2008
-
GaInAsP/InP量子井戸構造のRIEプラズマによるPL強度劣化とアニールによる回復
第55回応用物理学関係連合講演会 2008
-
Reduction of RIE Induced Damage on Lasing Properties of GaInAsP/InP DQW Lasers Fabricated by 2-step Growths
OPTO2008 (part of SPIE Photonics West 2008) 2008
-
InP 系長波長帯面発光レーザの現状
電子情報通信学会 ２００８年総合大会 2008
-
GaInAsP/InP Distributed Feedback and Distributed Reflector Lasers with Fine Wirelike Active Regions
Photonics WEST Optoelectronics 2008 2008
-
光イコライザを用いた面発光レーザの直接変調帯域の増大
第５５回応用物理学関係連合講演会 2008
-
細線状活性層を有する分布反射型レーザの直接変調特性
電子情報通信学会 2008年総合大会 2008
-
Bit-Error-Rate Measurement of GaInAsP/InP Distributed Reflector Laser with Wirelike Active Regions
The 20th International Conference on Indium Phosphide and Related Materials (IPRM2008) 2008
-
フラーレン含有の二層構造の電子線レジストを用い、平行平板型反応性イオンエッチングで作製したシリコン細線導波路の評価
2008
-
1.55μm帯を用いた光信号によるサブテラヘルツ波の直接変調
2008
-
A sub-mA Threshold Current Operation of Distributed-Reflector (DR) Laser
Nano-Optoelectronics Workshop, 2008 (i-NOW 2008) 2008
-
Comparison of Wafer Bonding Methods of Membrane GaInAsP WiredWaveguides on Si Substrate
2008 International Nano-Optoelectronics Workshop 2008
-
RIE-plasma Induced Optical Property Degradation in GaInAsP/InP Quantum-Well Structures
The 20th International Conference on Indium Phosphide and Related Materials (IPRM2008) 2008
-
Injection Type GaInAsP/InP/Si DFB Lasers Directly Bonded on SOI Substrate
The 20th International Conference on Indium Phosphide and Related Materials (IPRM2008) 2008
-
SOI基板への直接貼り付け法によるGaInAsP/InP DFBレーザ
電子情報通信学会レーザ・量子エレクトロニクス研究会. 2008
-
Bandwidth Enhancement of Directly Modulated DFB Lasers and EML Lasers using Optical Equalizers
Conference on Lasers and Electro-Optics, CLEO 2008
-
シリコン上薄膜光回路のための横方向接合導波路型フォトダイオード
第70回応用物理学会学術講演 2009
-
レート方程式によるAlGaInAs長波長帯レーザトランジスタの動作解析
第７０回応用物理学会学術講演会 2009
-
Si基板上ハイブリッドIII-V族半導体薄膜光デバイス
第７０回応用物理学会学術講演会 2009
-
Length dependencies of in-plane polarizations anisotropy in GaInAsP/InP quantum-wire structures fabricated by dry etching and regrowth process
OPTO2008 (part of SPIE Photonics West 2008) 2008
-
表面活性化接合によるInP/Si接合とフォトルミネセンス特性評価
2009
-
Reduction of RIE Induced Damage on Lasing Properties of GaInAsP/InP DQW Lasers Fabricated by 2-step Growths
OPTO2008 (part of SPIE Photonics West 2008) 2008
-
薄膜光回路にむけた横方向接合導波路型フォトダイオード
2009
-
光配線のための薄膜半導体光源に向けた横注入型レーザ
2009
-
Athermal Wavelength Operation of Si-Slot Ring Resonator Embedded with Benzocyclobutene
2009
-
Improved Quantum Efficiency of Lateral Current Injection Type Fabry-Perot Lasers
International Symposium on Quantum Nanophotonics and Nanoelectronics 2009
-
Status of InP-based vertical-cavity surface-emitting lasers
IEICE Annual Meeting 2008 2008
-
GaInAsP/InP Distributed Feedback and Distributed Reflector Lasers with Fine Wirelike Active Regions
Photonics WEST Optoelectronics 2008 2008
-
Bandwidth enhancement with tunable optical equalizer for directly modulated VCSELs
The 55th Spring Meeting of JSAP 2008
-
Direct Modulation Characteristics of Distributed Reflector Laser with Wirelike Active Regions
2008
-
Evaluation of the Structure Dependence of the Light Propagation Loss with Si-Slot Waveguide Embedded with Benzocyclobutene
2010
-
Evaluation of a-Si waveguides characteristics on SOI wafer with multiple layers
2010
-
Modulation characteristics of lateral current injection laser
2010
-
Regrowth Interface Quality Dependence on Thermal Cleaning of AlGaInAs/InP Buried Heterostructure Lasers
2010
-
Optical Injection Locking of Distributed Reflector Lasers with Wirelike Active Regions
IEICE-LQE2009-169 2010
-
All-optical Switch Consisting of Multimode Interferometer Combined with Metamaterials: Device Design
The 22nd International Conference on Indium Phosphide and Related Materials (IPRM-2010) 2010
-
Modulation Bandwidth Enhancement of Distributed Reflector Lasers with Wirelike Active Regions by Optical Injection Locking
2010
-
Bandwidth Enhancement of Distributed Reflector Lasers at Low Bias Current by Optical Injection Locking
OFC/NFOEC 2010 2010
-
GaInAsP/InP Lateral Current Injection Laser Grown on SI-InP Substrate
2008
-
Enhancement of Modulation Bandwidth in Distributed Reflector Lasers
Nano-Optoelectronics Workshop, 2008 (i-NOW 2008) 2008
-
面発光レーザを用いた可変光イコライザによる変調帯域の拡大
第69回応用物理学会学術講演会 2008
-
位相シフトDFB領域と受動DBR領域を有する分布反射型(DR)レーザの低電流動作
第69回応用物理学会学術講演会 2008
-
Loss Reduction of SiWireWaveguide on SOI Substrate Prepared by Parallel Plate RIE using Double Layered Resist Mask with C60
The IEEE Nanotechnology Materials and Devices Conference 2008 2008
-
Optical Compensation of Fiber Nonlinearity Using Vertical Micro-cavity Saturable Absorber
ISLC2008 2008
-
OMVPE再成長法による薄膜クラッド層を有する横方向電流注入型レーザ
2008
-
光生成キャリア変調による光信号のテラヘルツ・サブテラヘルツ信号への直接変換
第69回応用物理学会学術講演会 2008
-
長波長帯レーザトランジスタ実現へ向けたベース層の構造設計
第69回応用物理学会学術講演会 2008
-
自己注入同期による分布反射型(DR)レーザの直接変調帯域の増大
第69回応用物理学会学術講演会 2008
-
Injection Type GaInAsP/InP DFB Lasers
2008 International Nano-Optoelectronics Workshop 2008
-
Top-Air-Cladding GaInAsP/InP Lateral Current Injection Type Lasers
IEEE Nanotechnology Materials and Device Conference 2008 2008
-
85℃ continuous wave operation of membrane BH-DFB Laser cladded by benzocyclobutene
10th International Symposium on Contemporary Photonics Technology (CPT 2007) 2007
-
シリコンフォトニクス光源
シリコンフォトニクス技術分科会 2008
-
Slow light modulator with Bragg reflector waveguide
Optical Fiber Communications Conference 2007 2007
-
1.3 and 1.55-μm InP-based VCSELs for digital and radio signal transmission
OFC 2007 2007
-
SOI上の半導体薄膜レーザ
2008
-
InP-based long wavelength VCSELs: Their Characteristics and Applications
Asia-Pacific Optical Communications 2007 2008
-
半導体薄膜レーザ実現に向けた半絶縁性基板上GaInAsP薄膜への横注入型レーザ
電子情報通信学会レーザ・量子エレクトロニクス研究会 2008
-
テラヘルツ信号の光生成キャリアによる光信号からの直接変換
電子デバイス研究会 2008
-
光励起自由キャリアを用いた1.55μm光信号からサブTHz信号への直接変換
2008
-
Wavelength Modulation over 500 kHz of Micromechanically TunableInP-Based VCSELs with Si-MEMS Technology
21th International Semiconductor Laser Conference 2008
-
Observation of RIE Induced Damage on Lasing Properties of GaInAsP/InP MQW Lasers Fabricated by 2-step Growths
The 34th International Symposium on Compound Semiconductors (ISCS2007) 2007
-
Transverse-mode and Polarization Characteristics of 1.55 μm Micromachined VCSELs
12th Optoelectronics and Communications Conference/16th International Conference on Integrated Optics and Optical Fiber Communication, OECC/IOOC2007 2007
-
Wire-Length Dependence of Polarization Anisotropy in GaInAsP/InP Quantum-Wire Structures
2007
-
Sub milliampere operation of 1540 nm wavelength Distributed Reflector Laser with Wirelike Active Regions
The 19th International Conference on Indium Phosphide and Related Materials (IPRM2007) 2007
-
Integration of Front Power Monitor with Distributed Reflector Laser through Deep Etched Narrow Groove Isolation
The 19th International Conference on Indium Phosphide and Related Materials (IPRM2007) 2007
-
80 oC CW Operation of GaInAsP/InP Membrane BH-DFB Laser With Air-Bridge Structure
The 19th Indium Phosphide and Related Material (IPRM 2007) 2007
-
High Speed Response of Optical Nonlinear Phase Shifter Based on 1.55 μm VCSEL
CLEO 2007 2007
-
Athermal Operation of Micromachined VCSELs using Bimorph Effect
The 54th Spring Meeting of Japan Society of Applied Physics and Related Societies 2007
-
Improved Temperature Dependence of GaInAsP/InP DFB Lasers with Wirelike Active Regions by Bragg Wavelength Detuning
The 19th International Conference on Indium Phosphide and Related Materials (IPRM2007) 2007
-
High Speed Response of Optical Nonlinear Phase Shifter Based On 1.55 μm VCSEL
The 54th Spring Meeting of Japan Society of Applied Physics and Related Societies 2007
-
Slow light modulator with Bragg reflector waveguide
Optical Fiber Communications Conference 2007 2007
-
細線状活性層の線幅変調による電界吸収変調器集積DRレーザ
第54回応用物理学関係連合講演会 2007
-
85℃ continuous wave operation of membrane BH-DFB Laser cladded by benzocyclobutene
10th International Symposium on Contemporary Photonics Technology (CPT 2007) 2007
-
Fabrication of GaInAsP/InP Arbitrary Shaped Low Dimensional Quantum Structures
The 20th International Microprocesses and Nanotechnology Conference (MNC2007) 2007
-
深い極微溝による電気的分離を利用したDRレーザ前端面へのパワーモニターの集積
第54回応用物理学関係連合講演会 2007
-
1.3 and 1.55-μm InP-based VCSELs for digital and radio signal transmission
OFC 2007 2007
-
Transient Behavior of Nonliner optical Compensator Based On Vertical Micro-Cavity Saturable Absorber
The 68th Autumn Meeting of Japan Society of Applied Physics and Related Societies 2007
-
Transient Behavior of Nonlinear Optical Compensator Based on Vertical Micro-Cavity Saturable Absorber
33th European Conference and Exhibition on Optical Communication, ECOC07 2007
-
Transverse-mode and Plarization Characteristics of 1.55μm Micromachined VCSELs
The 68th Autumn Meeting of Japan Society of Applied Physics and Related Societies 2007
-
Slow Light Detector with Bragg Reflector Waveguide
The 68th Autumn Meeting of Japan Society of Applied Physics and Related Societies 2007
-
Transverse-mode and Polarization Characteristics of 1.55 μm Micromachined VCSELs
12th Optoelectronics and Communications Conference/16th International Conference on Integrated Optics and Optical Fiber Communication, OECC/IOOC2007 2007
-
Sub milliampere operation of 1540 nm wavelength Distributed Reflector Laser with Wirelike Active Regions
The 19th International Conference on Indium Phosphide and Related Materials (IPRM2007) 2007
-
High Speed Response of Optical Nonlinear Phase Shifter Based on 1.55 μm VCSEL
CLEO 2007 2007
-
80 oC CW Operation of GaInAsP/InP Membrane BH-DFB Laser With Air-Bridge Structure
The 19th Indium Phosphide and Related Material (IPRM 2007) 2007
-
エアブリッジ構造を用いたGaInAsP/InP半導体薄膜BH-DFBレーザ
電子情報通信学会レーザ・量子エレクトロニクス研究会 2007
-
バイモルフ効果によるマイクロマシン面発光レーザの波長温度無依存動作
第54回応用物理学会春季講演会 2007
-
1.55 μm VCSELを用いた非線形位相シフタの高速パルス応答
第54回応用物理学会春季講演会 2007
-
Improved Temperature Dependence of GaInAsP/InP DFB Lasers with Wirelike Active Regions by Bragg Wavelength Detuning
The 19th International Conference on Indium Phosphide and Related Materials (IPRM2007) 2007
-
Integration of Front Power Monitor with Distributed Reflector Laser through Deep Etched Narrow Groove Isolation
The 19th International Conference on Indium Phosphide and Related Materials (IPRM2007) 2007
-
エアブリッジ構造を用いたGaInAsP/InP半導体薄膜BH-DFBレーザ
第54回応用物理学関係連合講演会 2007
-
Far field pattern control of single high order transverse mode VCSEL with micromachined surface relief
IEEE Lasers and Electro-Optics Society 2001 Annual Meeting 2001
-
Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1mW
The Pacific Rim Conf. on Lasers and Electro-Optics 2001 2001
-
Optical near field by vertical cavity surface emitting laser
Trans. IEICE 2000
-
Highly strained GaInAs/GaAs quantum well lasers emitting at 1.2μm wavelength
Frontier Science Research Conf. 2000
-
Optical near field by vertical cavity surface emitting laser
Trans. IEICE 2000
-
Highly strained GaInAs/GaAs quantum well lasers emitting at 1.2μm wavelength
Frontier Science Research Conf. 2000
-
Room temperature continuous-wave operation of GaInNAs/GaAs VCSELs grown by chemical beam epitaxy with output power exceeding 1mW
Electron. Lett. 2001
-
Highly strained GaInAs/GaAs quantum well vertical-cavity surface-emitting laser on GaAs (311)B substrate for stable polarization operation
IEEE J. Select. Top. Quantum Electron. 2001
-
Analysis and fabrication of micro-aperture GaAs/GaAlAs surface emitting laser for near field optical data storage
IEEE J. Select. Top. Quantum Electron. 2001
-
1.2μm帯高歪GaInAs/GaAs量子井戸面発光レーザの発振特性
第62回応用物理学会学術講演会 2001
-
Lasing characteristics of InGaAs-GaAs polarization controlled vertical-cavity surface-emitting laser grown on GaAs (311)B substrate
IEEE J. Select. Top. Quantum Electron 1999
-
Lasing characteristics of InGaAs-GaAs polarization controlled vertical-cavity surface-emitting laser grown on GaAs (311)B substrate
IEEE J. Select. Top. Quantum Electron 1999
-
1.55μm帯MEMS構造面発光レーザの横モード・偏光特性
第68回応用物理学会秋季講演会 2007
-
Fabrication of GaInAsP/InP Arbitrary Shaped Low Dimensional Quantum Structures
The 20th International Microprocesses and Nanotechnology Conference (MNC2007) 2007
-
Fabrication and Characterization of InP/GaInAsP based Self-Adjustable Cantilever for Temperature-Insensitive VCSELs
The 53th Spring Meeting of Jpn. Soc. Appl. Phys. 2006
-
10-Gbps 1.3 and 1.55-μm InP-based VCSELs: 85°C 10-km Error-free Transmission and Room Temp. 40-km Transmission at 1.55-μm with EDC
Optical Fiber Conference 2006 2006
-
2段階OMVPE成長GaInAsP/InP量子井戸レーザにおけるRIEプラズマ損傷とその低減
第68回応用物理学会学術講演会 2007
-
Transient Behavior of Nonlinear Optical Compensator Based on Vertical Micro-Cavity Saturable Absorber
33th European Conference and Exhibition on Optical Communication, ECOC07 2007
-
可飽和吸収体を有する垂直微小共振構造を用いた非線形光学効果補償デバイスの高速応答性
第68回応用物理学会秋季講演会 2007
-
ブラッグ反射鏡導波路による低群速度光検出器
第68回応用物理学会秋季講演会 2007
Awards
-
文部科学大臣表彰若手科学者賞
2009
Research Projects
-
Highly Efficient Semiconductor Membrane Lasers toward Drastic Reduction of Data Transmission Energy Cost
Grant number：20H02200 2020.4 - 2023.3
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)
Grant amount：\17810000 （ Direct Cost: \13700000 、 Indirect Cost：\4110000 ）
-
Investigation of novel methods of controlling output power with stable wavelength operation and modulation bandwidth enhancement by long-wavelength transistor lasers
Grant number：17H03247 2017.4 - 2020.3
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)
Nishiyama Nobuhiko
Grant amount：\17680000 （ Direct Cost: \13600000 、 Indirect Cost：\4080000 ）
In order to meet the demand for a direct modulation laser for short-to-medium distance optical communication, we aimed to establish a method to control the optical output, oscillation spectrum, and modulation band of a 1.3 micrometer-band transistor laser.
First of all, we have realized a theoretical calculation that agrees with complicated characteristic measurement data. By utilizing this theoretical calculation, the design guideline of the transistor laser was clarified .
Next, in the actual fabrication, we proposed a new electrode structure with the goal of improving the electric band and heat dissipation characteristics, and realized a device that operates at 95 degrees, which is the highest oscillation temperature in the world, with the transistor laser. We also succeeded in obtaining stable small signal characteristics. -
Exploration of breakthrough in terahertz-device performance by understanding the radiation mechanism from view point of electron travelling and transition
Grant number：16H06292 2016.4 - 2021.3
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Specially Promoted Research
Asada Masahiro
Grant amount：\537810000 （ Direct Cost: \413700000 、 Indirect Cost：\124110000 ）
This study was done aiming at elucidation of device operation, achievement of high performance, and the development and expansion of applications, for semiconductor light sources in the terahertz frequency band using resonant tunneling diode oscillators, and many results were obtained. In the elucidation of the device operation, a theory for the response to terahertz waves was constructed. In the high-performance operation, 1.98 THz oscillation was achieved, which is the highest frequency of room-temperature electronic single oscillators to date, and a new structure capable of oscillating up to 2.8 THz was proposed. Oscillation with high output power of 0.7 mW at 1 THz by array configuration, frequency-variable oscillators, and oscillation with 1 Hz line width were also achieved. In the application, basic operation was demonstrated for spectroscopy, high-capacity communication, radar, and three-dimensional imaging
-
Creation of Ultra-low Power-consumption Semiconductor Membrane Photonic Integrated Circuits toward On-chip Optical Interconnections
Grant number：15H05763 2015.5 - 2019.3
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (S)
Arai Shigehisa
Grant amount：\199160000 （ Direct Cost: \153200000 、 Indirect Cost：\45960000 ）
We investigated ultralow-power consumption photonics devices and their integrations aiming at optical interconnections in Si-LSI circuits since the power consumption in metal wires will be bottleneck of high-speed operation in future. As the results, we successfully realized semiconductor lasers based on semiconductor membrane structure of our proposal and demonstrated high-speed and ultralow-power consumption operation, i.e. almost an order of magnitude lower than that of semiconductor lasers used in optical fiber communications. Moreover, photodiodes based on the semiconductor membrane structure were realized and an integration with the membrane laser was also demonstrated.
-
Investigation of Characteristics Control Method for Long-wavelength Transistor Lasers and Demonstration of their Adaptability to Next Generation Network
Grant number：25709026 2013.4 - 2017.3
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Young Scientists (A)
Nobuhiko Nishiyama
Grant amount：\24960000 （ Direct Cost: \19200000 、 Indirect Cost：\5760000 ）
To adapt the increase of the bandwidth for future photonic networks, it is expected to realize direct modulated lasers which have faster modulation bandwidth beyond conventional semiconductor lasers.
First, by theoretical discussion, design guidelines to reduce the parasitic capacitance of transistor lasers, which were a big issue for conventional transistor lasers, were established. And in actual fabrication, better static characteristics and dynamic characteristics, which agreed with the theoretical calculation, were demonstrated. Therefore, this proved the effectiveness of the theoretical discussion in this project.
Because of these results, outlook and ways to realize transistor lasers with enough performances for future high speed network are shown. -
Realization of Long-wavelength Laser Transistor for New GenerationPhotonic Networks
Grant number：22360138 2010 - 2012
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)
NISHIYAMA Nobuhiko
Grant amount：\18460000 （ Direct Cost: \14200000 、 Indirect Cost：\4260000 ）
Theoretical analysis and fabrication of a transistor laser (TL) using AlGaInAs quantum wells and a buried-hetero (BH) structure have been studied. First, the fabrication technology of the BH structure for AlGaInAs was studied and state-of-the-art AlGaInAs/InP-BH LDs were demonstrated. This technology enabled CW lasing operation of AlGaInAs TLs for the first time with the threshold emitter current of 38 mA. This TL showed output power control by base-collector voltage change.
-
Development of devices and systems toward realization of high-capacity wireless communications by terahertz waves
Grant number：21226010 2009.5 - 2014.3
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (S)
ASADA Masahiro, MIYAMOTO Yasuyuki, NISHIYAMA Nobuhiko, SUZUKI Safumi
Grant amount：\213330000 （ Direct Cost: \164100000 、 Indirect Cost：\49230000 ）
Toward realization of high-capacity wireless communications in the undeveloped terahertz frequency region, we investigated oscillation and modulation of terahertz waves, and wireless data transmission. For the oscillation device, we achieved room-temperature oscillation at 1.55 THz using resonant tunneling diodes with reduced electron delay, which is the highest frequency of semiconductor electron devices. High-power oscillation and high-speed direct modulation of these oscillators were achieved with the structure optimization of the integrated micro-antennas. Modulators for terahertz waves with optical signal and transistors with high current drivability for modulation were also obtained. Wireless data transmission was demonstrated with the resonant- tunneling-diode transmitter and Schottky-barrier-diode receiver, and feasibility of high-capacity communication was obtained.
-
InP-based membrane-type optical and electronic devices for broad band intra-chip/inter-chip interconnection in Si-LSI circuits
Grant number：19002009 2007 - 2011
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Specially Promoted Research
ARAI Shigehisa, MARUYAMA Takeo, ASADA Masahiro, MIYAMOTO Yasuyuki, NISHIYAMA Nobuhiko
Grant amount：\551720000 （ Direct Cost: \424400000 、 Indirect Cost：\127320000 ）
We investigated InP-based membrane-type optical and electronic devices for broad band and low-power consumption optical interconnection in Si-LSI circuits since the RC delay time and the power consumption in metal wires will be bottleneck of high-speed operation and high functionality of LSIs in future. As the results, we successfully demonstrated current-injection-type membrane semiconductor lasers as well as photodetectors as low-power consumption optical devices, and also terahertz devices for inter-chip high-speed interconnection.
-
Realization of high performance long wavelength laser transistors
Grant number：19686023 2007 - 2009
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Young Scientists (A)
NISHIYAMA Nobuhiko
Grant amount：\24960000 （ Direct Cost: \19200000 、 Indirect Cost：\5760000 ）
The large signal analysis of laser transistors, which have quantum wells in the base layer of hetero bipolar transistors, has been demonstrated for the first time. The simulation indicates better eye diagram over 40Gbps can be achieved for the laser transistors compared with conventional laser diodes.
To realize the laser transistors, AlGaInAs quantum well buried hetero laser diodes were used to quantify non-radiative recombination velocity by comparison of spontaneous emission intensity toward establishment of regrowth process of AlGaInAs buried hetero structure. -
New functional longwavelength laser transistor and their applications
2007
Grant type：Competitive
-
シリコン上３次元光回路
2007
Grant type：Competitive
-
長波長帯半導体レーザトランジスタの新機能発現とその応用
2007
Grant type：Competitive
-
3D Silicon Photonics Circuit
2007
Grant type：Competitive
-
超並列光伝送のためのInGaAs/GaAs面発光レーザアレイ
Grant number：99J06616 1999 - 2000
日本学術振興会 科学研究費助成事業 特別研究員奨励費
西山 伸彦
Grant amount：\1800000 （ Direct Cost: \1800000 ）