Organization
School of Engineering Associate Professor
Title
Associate Professor
External link
KAKUSHIMA KUNIYUKI
News & Topics
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半導体の少数キャリア寿命を正確に測定する手法開発 シリコンパワーデバイスの製造プロセス評価が可能に
2018/06/22
Languages： Japanese
少数キャリア寿命[用語1]を電気的に評価するテストパターンを提案 少数キャリアの二次元的拡散によるウエハーの抵抗変化量から寿命を抽出 IGBT製造工程であるゲート絶縁膜形成プロセスの評価を実施 IGBTと同じウエハーに作り込め実デバイスに近い少数キャリア寿命を評価
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2010/06/15
Languages： Japanese
東京工業大学の角嶋邦之助教と岩井洋教授はシリコンCMOSトランジスタのゲート絶縁膜を薄膜化しながらもリーク電流を大幅削減するプロセス技術を開発した。トランジスタの性能向上と低消費電力を両立させる技術で，次世代ＬＳＩ実現にめどをつけると同時に2020年に必要と見込まれるＬＳＩの性能を実現するキープロセスになると期待される。 開発したのは高誘電率ゲート絶縁膜（用語①）とシリコン基板を直接接合するプロセス技術。同技術を用い，等価酸化膜膜厚(EOT，用語②)は2013年に必要とされる0.64nmで，１平方当たり0.65アンペア（A/cm2）という極めて小さなリーク電流を確認した。この値は国際半導体ロードマップ（ＩＴＲＳ，用語④）で要求される値の1000分の1である。
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等価換算膜厚0.37nmのHigh-kゲート絶縁膜トランジスタの良好な動作を確認
2008/11/07
Languages： Japanese
東京工業大学大学院総合理工学研究科の角嶋邦之助教，フロンティア研究センターの岩井洋教授らは，LSI微細化のネックとなっていたゲート絶縁膜の薄膜化に成功した．回路線幅16nm以降の次世代LSI実現の道を開く成果といえる． 微細シリコンCMOSトランジスタの性能向上と低消費電力化のためにHigh-k(高誘電率)ゲート絶縁膜の更なる薄膜化が必須の技術である．しかしながら，ITRS（国際半導体ロードマップ）2007ではゲート絶縁膜の薄膜化は2012年に0.5nmの等価換算膜厚(EOT)に到達し，それ以降は薄膜化が進まないということになっており，その後のCMOS微細化による性能向上に関し大きな懸念となっていた．
Research Areas
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Nanotechnology/Materials / Thin film/surface and interfacial physical properties
Papers
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Cooling-trajectory-controlled cation redistribution in spinel CoFe2O4 for photooxidation and peroxide-assisted oxidation Reviewed
Yu-Hao Chen, Xinyu Jin, Shota Kitaoka, Tomoyuki Kurioka, Chun-Yi Chen, Kuniyuki Kakushima, Sangaraju Shanmugam, Masato Sone, Yung-Jung Hsu, Satoshi Okamoto, Tso-Fu Mark Chang
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS 333 2026.11
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Ferroelectric switching of AlBN films formed by pulse CVD method Reviewed
Yuukou Katou, Takuya Hoshii, Hitoshi Wakabayashi, Kuniyuki Kakushima
JAPANESE JOURNAL OF APPLIED PHYSICS 65 ( 14 ) 2026.7
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On the enhancement of capacitive memory window for ferroelectric AlScN films using metal-capping oxidation (MCO) process Reviewed
Si-Meng Chen, Shun Komai, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Kuniyuki Kakushima
JAPANESE JOURNAL OF APPLIED PHYSICS 65 ( 12 ) 2026.6
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Polarity-dependent time-dependent dielectric breakdown in ferroelectric AlScN Reviewed
Kazuki Goshima, Haruro Inoue, Yuki Yamada, Yoshiharu Kirihara, Kuniyuki Kakushima, Hiroshi Nohira, Yuichiro Mitani
JAPANESE JOURNAL OF APPLIED PHYSICS 65 ( 8 ) 2026.4
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Area and polarity-dependent switching in AlScN ferroelectric capacitors Reviewed
Hirofumi Nishida, Si-Meng Chen, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Kuniyuki Kakushima
JAPANESE JOURNAL OF APPLIED PHYSICS 65 ( 6 ) 2026.3
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Polarity-dependent asymmetric switching of ferroelectric AlScN thin films Reviewed
Hirofumi Nishida, Si-Meng Chen, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Kuniyuki Kakushima
JAPANESE JOURNAL OF APPLIED PHYSICS 65 ( 5 ) 2026.3
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Interpretation of ferroelectric behavior in AlScN films with TiN and Ta bottom electrodes Reviewed
Ting-Tzu Kuo, Ting-Mao Feng, Si-Meng Chen, Hitomi Hasegawa, Jia-Hong Lin, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Ying-Chung Chen, Ting-Chang Chang, Kuniyuki Kakushima
APPLIED PHYSICS LETTERS 128 ( 9 ) 2026.3
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Zirconium disulfide film improved by hydrogen-sulfide annealing at BEOL-compatible temperature with less surface residual sulfur Reviewed
Taiga Fuse, Naoki Matsunaga, Masaki Otomo, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 65 ( 3 ) 2026.2
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Stoichiometric and high-crystallinity H2S-annealed MoS2 films via controlled PVD deposition pressure Reviewed
Naoki Matsunaga, Jaehyo Jang, Soma Ito, Kuniyuki Kakushima, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 65 ( 1 ) 2026.1
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N-type charge-transfer doping to physical-vapor-deposited MoS2 films using atomic-layer-deposited HfO2 films Reviewed
Shunsuke Nozawa, Jaehyo Jang, Naoki Matsunaga, Taiga Fuse, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 65 ( 1 ) 2026.1
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Magnetism control of thin CoFeB layers by ferroelectric polarization Reviewed
Yan Wu, Kazushi Onimura, Hiroyuki Kobayashi, Satoshi Okamoto, Kuniyuki Kakushima
APPLIED PHYSICS EXPRESS 18 ( 3 ) 2025.3
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Interface properties of SiC MOS devices with NH3 plasma nitridation of ultrathin SiO2 interfacial layer Reviewed
An Li, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Kuniyuki Kakushima
JAPANESE JOURNAL OF APPLIED PHYSICS 64 ( 3 ) 2025.3
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Fabrication of n-type and p-type WSe2 field-effect transistors and their low-voltage CMOS inverter operation Reviewed
Takamasa Kawanago, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 64 ( 2 ) 2025.2
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Crystallinity improvement of physical-vapor-deposited WS2 films by controlling particle energy Reviewed
Soma Ito, Kaede Teraoka, Shinya Imai, Naoki Matsunaga, Jaehyo Jang, Iriya Muneta, Kuniyuki Kakushima, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 64 ( 2 ) 2025.2
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Improvement of MoS2 film quality using sputtering processes controlling particle- and energy-flux followed by sulfur-vapor annealing Reviewed
Shinya Imai, Tetsuya Tatsumi, Shigetaka Tomiya, Kuniyuki Kakushima, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 64 ( 2 ) 2025.2
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Improvement of MoS2 Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid Reviewed
Shinya Imai, Ryo Ono, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Shigetaka Tomiya, Kazuo Tsutsui, Hitoshi Wakabayashi
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 13 15 - 23 2025
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Investigation of Asymmetric Ferroelectric Switching in AlScN MFM Capacitors Reviewed
Hirofumi Nishida, Si-Meng Chen, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Kuniyuki Kakushima
2025 SILICON NANOELECTRONICS WORKSHOP, SNW 88 - 89 2025
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Impact of Underlying Insulators on the Crystallinity and Antisite Defect Formation in PVD-MoS2 Films Reviewed
Naoki Matsunaga, Shinya Imai, Takanori Shirokura, Yasuhide Mochizuki, Kazuaki Kuwahata, Kazuo Tsutsui, Kuniyuki Kakushima, Hitoshi Wakabayashi
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 13 883 - 891 2025
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P-Type Doping of Solid-Phase Crystallized PVD-MoS2 Film Using Nitrogen Annealing Accelerated by Hydrogen Reviewed
Jaehyo Jang, Shinya Imai, Naoki Matsunaga, Soma Ito, Kaede Teraoka, Md Iftekharul Alam, Takuya Hoshii, Kuniyuki Kakushima, Akinobu Teramoto, Hitoshi Wakabayashi
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 13 1288 - 1298 2025
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Ferroelectricity Engineered AlScN Thin Films Prepared by Hydrogen Included Reactive Sputtering for Analog Applications Reviewed
Si-Meng Chen, Hirofumi Nishida, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Edward Yi Chang, Kuniyuki Kakushima
2024 IEEE SILICON NANOELECTRONICS WORKSHOP, SNW 2024 29 - 30 2024
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Scalable ferroelectricity of 20 nm-thick (Al0.8Sc0.2)N thin films sandwiched between TiN electrodes Reviewed
Reika Ota, Shinnosuke Yasuoka, Ryoichi Mizutani, Takahisa Shiraishi, Kazuki Okamoto, Kuniyuki Kakushima, Tomoyuki Koganezawa, Osami Sakata, Hiroshi Funakubo
Journal of Applied Physics 134 ( 21 ) 2023.12
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Masaki Otomo, Masaya Hamada, Ryo Ono, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Japanese Journal of Applied Physics 62 ( SC ) SC1015 - SC1015 2023.1
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Takamasa Kawanago, Ryosuke Kajikawa, Kazuto Mizutani, Sung-Lin Tsai, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
IEEE Journal of the Electron Devices Society 11 15 - 21 2023
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Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure
Iriya Muneta, Takanori Shirokura, Pham Nam Hai, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Scientific Reports 12 ( 1 ) 2022.10
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Positive Seebeck coefficient of niobium-doped MoS2 film deposited by sputtering and activated by sulfur vapor annealing
Taiga Horiguchi, Takuya Hamada, Masaya Hamada, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 61 ( 7 ) 2022.7
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Experimental demonstration of high-gain CMOS inverter operation at low V ( dd ) down to 0.5 V consisting of WSe2 n/p FETs
Takamasa Kawanago, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 61 ( SC ) 2022.5
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High Seebeck coefficient in PVD-WS2 film with grain size enlargement
Takuya Hamada, Masaya Hamada, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 61 ( SC ) 2022.5
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Importance of crystallinity improvement in MoS2 film by compound sputtering even followed by post sulfurization
Shinya Imai, Takuya Hamada, Masaya Hamada, Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Tetsuya Tatsumi, Shigetaka Tomiya, Kazuo Tsutsui, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 60 ( SB ) 2021.5
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WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box
Takuya Hamada, Masaya Hamada, Satoshi Igarashi, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 9 1117 - 1124 2021
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WS2 pMISFETs by Sputtering and Sulfur-Vapor Annealing with TiN/HfO2-Top-Gate-Stack, TiN Contact and Ultra-Thin Body and Box
Takuya Hamada, Masaya Hamada, Satoshi Igarashi, Taiga Horiguchi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Tetsuya Tatsumi, Shigetaka Tomiya, Hitoshi Wakabayashi
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM) 2021
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Hall-effect mobility enhancement of sputtered MoS(2)film by sulfurization even through Al(2)O(3)passivation film simultaneously preventing oxidation
Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Haruki Tanigawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 59 ( 10 ) 2020.10
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Enhancement-mode accumulation capacitance-voltage characteristics in TiN/ALD-Al2O3/sputtered-MoS2 top-gated stacks
Haruki Tanigawa, Kentaro Matsuura, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 59 2020.7
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Strong edge-induced ferromagnetism in sputtered MoS2 film treated by post-annealing
Takanori Shirokura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
APPLIED PHYSICS LETTERS 115 ( 19 ) 2019.11
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Takuya Hoshii, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui
Japanese Journal of Applied Physics 58 ( 6 ) 061006 - 061006 2019.6
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Normally-off sputtered-MoS<inf>2</inf> nMISFETs with MoSi<inf>2</inf> contact by sulfur powder annealing and ALD Al<inf>2</inf>O<inf>3</inf> gate dielectric for chip level integration Reviewed
K. Matsuura, M. Hamada, T. Hamada, H. Tanigawa, T. Sakamoto, W. Cao, K. Parto, A. Hori, I. Muneta, T. Kawanago, K. Kakushima, K. Tsutsui, A. Ogura, K. Banerjee, H. Wakabayashi
19th International Workshop on Junction Technology, IWJT 2019 2019.6
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Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
2019 Electron Devices Technology and Manufacturing Conference (EDTM) 194 - 196 2019.3
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Low-Temperature MoS2 Film Formation Using Sputtering and H2S Annealing
Jun'ichi Shimizu, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Nobuyuki Ikarashi, Hitoshi Wakabayashi
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 7 ( 1 ) 2 - 6 2019
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High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS2 Film Using UHV RF Magnetron Sputtering and Sulfurization
Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 7 ( 1 ) 1258 - 1263 2019
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New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment
K. Kakushima, T. Hoshii, M. Watanabe, N. Shizyo, K. Furukawa, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Y. Numasawa, A. Ogura, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai
IEEE Symposium on VLSI Circuits, Digest of Technical Papers 2018-June 105 - 106 2018.10
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Verification of the injection enhancement effect in IGBTs by measuring the electron and hole currents separately Reviewed
T. Hoshii, K. Furukawa, K. Kakushima, M. Watanabe, N. Shigvo, T. Saraya, T. Takakura, K. Ltou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Shinichi Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Lwai
48th European Solid-State Device Research Conference, ESSDERC 2018 2018 48th European Solid-State Device Research Conference, ESSDERC 2018 26 - 29 2018.10
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Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase Sulfurization Reviewed
Kentaro Matsuura, Takumi Ohashi, Iriya Muneta, Seiya Ishihara, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, Hitoshi Wakabayashi
Journal of Electronic Materials 47 ( 7 ) 3497 - 3501 2018.7
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Ohmic contact between titanium and sputtered MoS2 films achieved by forming-gas annealing
Mayato Toyama, Takumi Ohashi, Kentaro Matsuura, Jun'ichi Shimizu, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 57 ( 7 ) 2018.7
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Photovoltaic properties of lateral ultra-thin Si p-i-n structure Reviewed
Suguru Tatsunokuchi, I. Muneta, T. Hoshii, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima
China Semiconductor Technology International Conference 2018, CSTIC 2018 1 - 3 2018.5
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Reduction of conductance mismatch in Fe/Al2O3/MoS2 system by tunneling-barrier thickness control Reviewed
Naoki Hayakawa, Iriya Muneta, Takumi Ohashi, Kentaro Matsuura, Jun'ichi Shimizu, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Japanese Journal of Applied Physics 57 ( 4 ) 2018.4
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Kentaro Matsuura, Jun'Ichi Shimizu, Mayato Toyama, Takumi Ohashi, Iriya Muneta, Seiya Ishihara, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, Hitoshi Wakabayashi
IEEE Journal of the Electron Devices Society 6 ( 1 ) 1251 - 1257 2018.1
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Mechanism for High Hall-Effect Mobility in Sputtered-MoS2 Film Controlling Particle Energy
Takuro Sakamoto, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Yuuta Suzuki, Nobuyuki Ikarashi, Hitoshi Wakabayashi
2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) 2018
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Relaxation of Self-Heating-Effect for Stacked-Nanowire FET and p/n-Stacked 6T-SRAM Layout
Eisuke Anju, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY 6 ( 1 ) 1239 - 1245 2018
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Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al2O3 Passivation Film
Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Haruki Tanigawa, Takumi Ohashi, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S) 2018
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Electrical characteristics of CeOx MIM capacitors
Takaku Yoshitaka, Muneta Iriya, Hoshii Takuya, Wakabayashi Hitoshi, Tsutsui Kazuo, Iwai Hiroshi, Kakushima Kuniyuki
JSAP Annual Meetings Extended Abstracts 2017.2 2986 - 2986 2017.8
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Low temperature ohmic contact for p-type GaN using Mg electrodes Reviewed
K. Kakushima, Y. Ikeuchi, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, T. Kikuchi, S. Ishikawa
17th International Workshop on Junction Technology, IWJT 2017 85 - 86 2017.6
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Quantitative relationship between sputter-deposited-MoS2 properties and underlying-SiO2 surface roughness Reviewed
Takumi Ohashi, Iriya Muneta, Kentaro Matsuura, Seiya Ishihara, Yusuke Hibino, Naomi Sawamoto, Kuniyuki Kakushima, Kazuo Tsutsui, Atsushi Ogura, Hitoshi Wakabayashi
Applied Physics Express 10 ( 4 ) 2017.4
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High-mobility and low-carrier-density sputtered MoS2 film formed by introducing residual sulfur during low-temperature in 3%-H-2 annealing for three-dimensional ICs Reviewed
Jun'ichi Shimizu, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
JAPANESE JOURNAL OF APPLIED PHYSICS 56 ( 4 ) 2017.4
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High-mobility and low-carrier-density sputtered MoS
Shimizu Jun’ichi, Ohashi Takumi, Matsuura Kentaro, Muneta Iriya, Kakushima Kuniyuki, Tsutsui Kazuo, Wakabayashi Hitoshi
Jpn. J. Appl. Phys. 56 ( 4 ) 04CP06 2017.3
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Experimental verification of a 3D scaling principle for low Vce(sat) IGBT
K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai
Technical Digest - International Electron Devices Meeting, IEDM 10.6.1 - 10.6.4 2017.1
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Crystallinity Improvement using Migration-Enhancement Methods for Sputtered-MoS2 Films Reviewed
Shin Hirano, Jun'ichi Shimizu, Kentaro Matsuura, Takumi Ohashi, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM) 234 - 235 2017
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Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET Reviewed
Jun'ichi Shimizu, Takumi Ohashi, Kentaro Matsuura, Iriya Muneta, Kuniyuki Kakushima, Kazuo Tsutsui, Nobuyuki Ikarashi, Hitoshi Wakabayashi
2017 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM) 222 - 223 2017
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3D Scaling for Insulated Gate Bipolar Transistors (IGBTs) with Low V-ce(sat)
K. Tsutsui, K. Kakushima, T. Hoshii, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai
2017 IEEE 12TH INTERNATIONAL CONFERENCE ON ASIC (ASICON) 1137 - 1140 2017
MISC
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Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs
Watanabe, Masahiro, Shigyo, Naoyuki, Hoshii, Takuya, Furukawa, Kazuyoshi, Kakushima, Kuniyuki, Satoh, Katsumi, Matsudai, Tomoko, Saraya, Takuya, Takakura, Toshihiro, Itou, Kazuo, Fukui, Munetoshi, Suzuki, Shinichi, Takeuchi, Kiyoshi, Muneta, Iriya, Wakabayashi, Hitoshi, Nakajima, Akira, Nishizawa, Shin-ichi, Tsutsui, Kazuo, Hiramoto, Toshiro, Ohashi, Hiromichi, Iwai, Hiroshi
2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) 311 - 314 2019
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Mo2C電極を用いたSiCショットキーバリアダイオードの通電試験
齋藤大樹, 宗田伊理也, 星井拓也, 若林整, 筒井一生, 岩井洋, 角嶋邦之
応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th ROMBUNNO.6a‐A201‐7 - 3488 2017.8
Research Projects
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高感度・高速X線センサーの開発
Grant number：17938159 2017
科学技術振興機構 産学が連携した研究開発成果の展開/研究成果展開事業/地域産学バリュープログラム
角嶋 邦之
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The Other Research Programs
Grant type：Competitive
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その他の研究制度
Grant type：Competitive