Design, Fabrication, and Evaluation of Waveguide Structure Using Si/CaF₂ Heterostructure for Near- and Mid- Infrared Silicon Photonics Reviewed

Long LIU, Gensai TEI, Masahiro WATANABE

IEICE Transactions on Electronics   E106.C ( 1 )   1 - 6   2023.1

Room temperature near-infrared electroluminescence of Si/CaF₂ quantum cascade laser structures grown on an SOI substrate Reviewed

Gensai Tei, Long Liu, Yohei Koyanagi, Masahiro Watanabe

Japanese Journal of Applied Physics   60 ( SB )   SBBE03 - SBBE03   2021.3

Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs Reviewed

Kiyoshi Takeuchi, Munetoshi Fukui, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Shinichi Suzuki, Yohichiroh Numasawa, Naoyuki Shigyo, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Wataru Saito, Shin-Ichi Nishizawa, Masanori Tsukuda, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto

IEEE Transactions on Semiconductor Manufacturing   33 ( 2 )   159 - 165   2020.5

Negative differential resistance of CaF₂/Si double barrier resonant tunneling diodes fabricated using plasma etching mesa isolation process Reviewed

Yoshiro Kumagai, Satoshi Fukuyama, Hiroki Tonegawa, Kizashi Mikami, Kodai Hirose, Kanta Tomizawa, Kensuke Ichikawa, Masahiro Watanabe

Japanese Journal of Applied Physics   59 ( SI )   SIIE03 - SIIE03   2020.4

Vertical Bipolar Transistor Test Structure for Measuring Minority Carrier Lifetime in IGBTs

K. Takeuchi, M. Fukui, T. Saraya, K. Itou, T. Takakura, S. Suzuki, Y. Numasawa, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, H. Wakabayashi, M. Tsukuda, A. Ogura, K. Tsutsui, H. Iwai, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto

2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)   98 - 101   2019.3

Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately

T. Hoshii, K. Furukawa, K. Kakushima, M. Watanabe, N. Shigvo, T. Saraya, T. Takakura, K. Ltou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Lwai

2018 48th European Solid-State Device Research Conference (ESSDERC)   26 - 29   2018.9

New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment

K. Kakushima, T. Hoshii, M. Watanabe, N. Shizyo, K. Furukawa, T. Saraya, T. Takakura, K. Ltou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Y. Numasawa, A. Ogura, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai

2018 IEEE Symposium on VLSI Circuits   105 - 106   2018.6

Resistance switching memory characteristics of CaF₂/Si/CaF₂ resonant-tunneling quantum-well heterostructures sandwiched by nanocrystalline Si secondary barrier layers Reviewed

Yuya Kuwata, Keita Suda, Masahiro Watanabe

APPLIED PHYSICS EXPRESS   9 ( 7 )   2016.7

Analysis of single- and double-barrier tunneling diode structures using ultrathin CaF₂/CdF₂/Si multilayered heterostructures grown on Si Reviewed

Keita Suda, Yuya Kuwata, Masahiro Watanabe

JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 4 )   2015.4

Resistance switching memory characteristics of Si/CaF₂/CdF₂/CaF₂/Si resonant-tunneling quantum-well structures Reviewed

Junya Denda, Kazuya Uryu, Keita Suda, Masahiro Watanabe

APPLIED PHYSICS EXPRESS   7 ( 4 )   044103-1 - 044103-4   2014.4

Resistance Switching Memory Characteristics of Si/CaF₂CdF₂ Quantum-Well Structures Grown on Metal (CoSi₂) Layer Reviewed

Junya Denda, Kazuya Uryu, Masahiro Watanabe

JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 4 )   04CJ07-1 - 04CJ07-4   2013.4

Suppression of leakage current of CdF₂/CaF₂ resonant tunneling diode structures grown on Si(100) substrates by nanoarea local epitaxy Reviewed

Tohru Kanazawa, Atsushi Morosawa, Ryo Fujii, Takafumi Wada, Yusuke Suzuki, Masahiro Watanabe, Masahiro Asada

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 6A )   3388 - 3390   2007.6

Room temperature negative differential resistance of CdF₂/CaF₂ double-barrier resonant tunneling diode structures grown on Si(100) substrates Reviewed

Tohru Kanazawa, Ryo Fujii, Takafumi Wada, Yusuke Suzuki, Masahiro Watanabe, Masahiro Asada

APPLIED PHYSICS LETTERS   90 ( 9 )   092101   2007.2

Improvement of electroluminescence from CdF₂/CaF₂ intersubband transition light-emitting structure by trench patterning and hydrogen annealing of Si substrate Reviewed

Keisuke Jinen, Kaoru Uchida, Shinji Kodaira, Masahiro Watanabe, Masahiro Asada

IEICE ELECTRONICS EXPRESS   3 ( 23 )   493 - 498   2006.12

Room-temperature electroluminescence from single-period (CdF₂/CaF₂) inter-subband quantum cascade structure on si substrate Reviewed

K Jinen, T Kikuchi, M Watanabe, M Asada

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   45 ( 4B )   3656 - 3658   2006.4

Optically pumped ultraviolet lasing of BeMgZnSe based quantum well laser structures Reviewed

Y Niiyama, T Murata, M Watanabe

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4   3 ( 4 )   878 - +   2006

Near-infrared electroluminescence from multilayered CdF₂/CaF₂ quantum heterostructure grown on trench-patterned Si(111) substrate Reviewed

Keisuke Jinen, Kaotu Uchida, Shinji Kodaira, Masahiro Watanabe, Masahiro Asada

2006 3RD IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS   128 - +   2006

BeMgZnSe-based ultraviolet lasers Reviewed

Y Niiyama, M Watanabe

SEMICONDUCTOR SCIENCE AND TECHNOLOGY   20 ( 12 )   1187 - 1197   2005.12

Ultraviolet lasing from optically pumped BeMgZnSe quantum-well laser structures Reviewed

Y Niiyama, T Murata, M Watanabe

APPLIED PHYSICS LETTERS   87 ( 14 )   142106   2005.10

Improvement of crystalline quality of BeZnSe using buffer layer by migration enhanced epitaxy on GaP(001) substrate Reviewed

T Yokoyama, Y Niiyama, T Murata, M Watanabe

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   44 ( 1-7 )   L75 - L77   2005

Epitaxial growth and optical properties for ultraviolet region of BeMgZnSe on GaP(001) substrate Reviewed

Y Niiyama, T Yokoyama, M Watanabe

PHYSICA STATUS SOLIDI B-BASIC RESEARCH   241 ( 3 )   479 - 482   2004.3

Effect of buffer layer on epitaxial growth of high-magnesium-content BeMgZnSe lattice matched to GaP(001) substrate Reviewed

Y Niiyama, T Yokoyama, M Watanabe

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   42 ( 6A )   L599 - L602   2003.6

Crystal Growth of High-Mg-Content BeMgZnSe Lattice Matched to GaP(001) Substrate Using BeZnSe Buffer Layer

Y. Niiyama, T. Yokoyama, M. Watanabe

First Asia-Pacific Workshop on Widegap Semiconductors, P118   302 - 303   2003

Epitaxial growth of BeZnSe on CaF₂/Si(111) substrate Reviewed

T Maruyama, N Nakamura, M Watanabe

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   41 ( 8A )   L876 - L877   2002.8

Room-temperature ultraviolet photoluminescence of BeZnSe on GaP(001) Reviewed

Y Niiyama, T Maruyama, N Nakamura, M Watanabe

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   41 ( 7A )   L751 - L753   2002.7

Room Temperature Negative Differential Resistance of CdF₂/CaF₂ Resonant Tunneling Diode grown on Si(100) substrate using Nanoarea Local Epitaxy Reviewed

Masahiro Watanabe, Tatsuya Ishikawa, Masaki Matsuda Tohru Kanazawa, Masahiro Asada

44th 2002 Electronic Materials Conference, Z5   54 - 55   2002

Theoretical analysis of the threshold current density in BeMgZnSe quantum-well ultraviolet lasers Reviewed

T Maruyama, N Nakamura, M Watanabe

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   40 ( 12 )   6872 - 6873   2001.12

Epitaxial growth and electrical characteristics of CaF2/Si/CaF2 resonant tunneling diode structures grown on Si(111) 1 degrees-off substrate Reviewed

M Watanabe, Y Iketani, M Asada

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   39 ( 10A )   L964 - L967   2000.10

CaF₂/CdF₂ double-barrier resonant tunneling diode with high room-temperature peak-to-valley ratio Reviewed

M Watanabe, T Funayama, T Teraji, N Sakamaki

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   39 ( 7B )   L716 - L719   2000.7

Epitaxial growth and ultraviolet photoluminescence of CaF₂/ZnO/CaF₂ heterostructures on Si(111) Reviewed

M Watanabe, Y Maeda, S Okano

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   39 ( 6A )   L500 - L502   2000.6

Improvement of the visible electroluminescence from nanocrystalline silicon embedded in CaF₂ on Si(111) substrate prepared by rapid thermal annealing Reviewed

T Maruyama, N Nakamura, M Watanabe

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   39 ( 4B )   1996 - 2000   2000.4

Resonant tunneling diodes in Si/CaF₂ heterostructures grown by molecular beam epitaxy Reviewed

M Tsutsui, M Watanabe, M Asada

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   38 ( 8B )   L920 - L922   1999.8

Visible electroluminescence from nanocrystalline silicon embedded in single-crystalline CaF₂/Si(111) with rapid thermal anneal Reviewed

T Maruyama, N Nakamura, M Watanabe

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   38 ( 8B )   L904 - L906   1999.8

Shortening of detection time for observation of hot electron spatial distribution by scanning hot electron microscopy Reviewed

N Kikegawa, BY Zhang, Y Ikeda, N Sakai, K Furuya, M Asada, M Watanabe, W Saito

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   38 ( 4A )   2108 - 2113   1999.4

Negative differential resistance of CaF₂/CdF₂ triple-barrier resonant-tunneling diode on Si(111) grown by partially ionized beam epitaxy Reviewed

M Watanabe, Y Aoki, W Saito, M Tsuganezawa

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   38 ( 2A )   L116 - L118   1999.2

Epitaxial growth of nanometer-thick CaF₂/CdF₂ heterostructures using partially ionized beam epitaxy Reviewed

M Watanabe, W Saitoh, Y Aoki, J Nishiyama

SOLID-STATE ELECTRONICS   42 ( 7-8 )   1627 - 1630   1998.7

Electroluminescence of nanocrystal Si embedded in single-crystal CaF₂/Si(111) Reviewed

M Watanabe, T Matsunuma, T Maruyama, Y Maeda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   37 ( 5B )   L591 - L593   1998.5

Light emission from Si nanocrystals embedded in CaF₂ epilayers on Si(111): Effect of rapid thermal annealing Reviewed

Masahiro Watanabe, Takeo Maruyama, Soichiro Ikeda

Journal of Luminescence   80 ( 1-4 )   253 - 256   1998

Reduction of electrical resistance of nanometer-thick CoSi₂ film on CaF₂ by pseudomorphic growth of CaF₂ on Si(111) Reviewed

W Saitoh, K Mori, H Sugiura, T Maruyama, M Watanabe, M Asada

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   36 ( 7A )   4470 - 4471   1997.7

Seventy-nm-pitch patterning on CaF₂ by e-beam exposure Reviewed

H Hongo, T Hattori, Y Miyamoto, K Furuya, T Matsunuma, M Watanabe, M Asada

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   35 ( 12A )   6342 - 6343   1996.12

Visible light emission from nanocrystalline silicon embedded in CaF₂ layers on Si(111) Reviewed

M Watanabe, F Iizuka, M Asada

IEICE TRANSACTIONS ON ELECTRONICS   E79C ( 11 )   1562 - 1567   1996.11

Detection of hot electron current with scanning hot electron microscopy Reviewed

F Vazquez, D Kobayashi, Kobayashi, I, Y Miyamoto, K Furuya, T Maruyama, M Watanabe, M Asada

APPLIED PHYSICS LETTERS   69 ( 15 )   2196 - 2198   1996.10

Proposal and analysis of very short channel field effect transistor using vertical tunneling with new heterostructures on silicon Reviewed

W Saitoh, K Yamazaki, M Asada, M Watanabe

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   35 ( 9A )   L1104 - L1106   1996.9

Transfer efficiency of hot electrons in a metal(CoSi2)/insulator(CaF2) quantum interference transistor Reviewed

T Suemasu, W Saitoh, Y Khono, K Mori, M Watanabe, M Asada

SURFACE SCIENCE   361 ( 1-3 )   209 - 212   1996

THEORETICAL AND MEASURED CHARACTERISTICS OF METAL(COSI2)-INSULATOR(CAF2) RESONANT-TUNNELING TRANSISTORS AND THE INFLUENCE OF PARASITIC ELEMENTS Reviewed

T SUEMASU, Y KOHNO, W SAITOH, M WATANABE, M ASADA

IEEE TRANSACTIONS ON ELECTRON DEVICES   42 ( 12 )   2203 - 2210   1995.12

METAL (COSI2)/INSULATOR (CAF2) HOT-ELECTRON TRANSISTOR FABRICATED BY ELECTRON-BEAM LITHOGRAPHY ON A SI SUBSTRATE Reviewed

W SAITOH, T SUEMASU, Y KOHNO, M WATANABE, M ASADA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   34 ( 10A )   L1254 - L1256   1995.10

METAL (COSI2)/INSULATOR (CAF2) HOT-ELECTRON TRANSISTOR FABRICATED BY ELECTRON-BEAM LITHOGRAPHY ON A SI SUBSTRATE Reviewed

W SAITOH, T SUEMASU, Y KOHNO, M WATANABE, M ASADA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   34 ( 10A )   L1254 - L1256   1995.10

FORMATION OF SILICON AND COBALT SILICIDE NANOPARTICLES IN CAF2 Reviewed

M WATANABE, F IIZUKA, M ASADA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   34 ( 8B )   4380 - 4383   1995.8

MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE DUE TO QUANTUM INTERFERENCE OF HOT-ELECTRON WAVES IN METAL (COSI2) INSULATOR (CAF2) HETEROSTRUCTURES AND INFLUENCE OF PARASITIC CIRCUIT ELEMENTS Reviewed

W SAITOH, T SUEMASU, Y KOHNO, M WATANABE, M ASADA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   34 ( 8B )   4481 - 4484   1995.8

FORMATION OF SILICON AND COBALT SILICIDE NANOPARTICLES IN CAF2 Reviewed

M WATANABE, F IIZUKA, M ASADA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   34 ( 8B )   4380 - 4383   1995.8

Metal (CoSi2)/insulator (CaF2) hot elelectron transistor using electron-beam lithography on Si substrate

W. Saitoh, T. Suemasu, Y. Kohno, M. Watanabe, M. Asada

European Solid-State Device Research Conference   631 - 634   1995

QUANTUM INTERFERENCE OF ELECTRON-WAVE IN METAL (COSI2) INSULATOR (CAF2) RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR STRUCTURE Reviewed

T SUEMASU, Y KOHNO, W SAITOH, N SUZUKI, M WATANABE, M ASADA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   33 ( 12B )   L1762 - L1765   1994.12

QUANTUM INTERFERENCE OF ELECTRON-WAVE IN METAL (COSI2) INSULATOR (CAF2) RESONANT-TUNNELING HOT-ELECTRON TRANSISTOR STRUCTURE Reviewed

T SUEMASU, Y KOHNO, W SAITOH, N SUZUKI, M WATANABE, M ASADA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   33 ( 12B )   L1762 - L1765   1994.12

DIFFERENT CHARACTERISTICS OF METAL (COSI₂) INSULATOR (CAF₂) RESONANT-TUNNELING TRANSISTORS DEPENDING ON BASE QUANTUM-WELL LAYER Reviewed

T SUEMASU, Y KOHNO, N SUZUKI, M WATANABE, M ASADA

IEICE TRANSACTIONS ON ELECTRONICS   E77C ( 9 )   1450 - 1454   1994.9

METAL(COSI₂)/INSULATOR(CAF₂) RESONANT-TUNNELING DIODE Reviewed

T SUEMASU, M WATANABE, J SUZUKI, Y KOHNO, M ASADA, N SUZUKI

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   33 ( 1A )   57 - 65   1994.1

REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION OSCILLATION DURING CAF2 GROWTH ON SI(111) BY PARTIALLY IONIZED BEAM EPITAXY Reviewed

M WATANABE, N SUZUKI, M ASADA

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   32 ( 2 )   940 - 941   1993.2

NEGATIVE DIFFERENTIAL RESISTANCE OF METAL (COSI2)/INSULATOR (CAF2) TRIPLE-BARRIER RESONANT TUNNELING DIODE Reviewed

M WATANABE, T SUEMASU, S MURATAKE, M ASADA

APPLIED PHYSICS LETTERS   62 ( 3 )   300 - 302   1993.1

EPITAXIAL-GROWTH AND ELECTRICAL CONDUCTANCE OF METAL(COSI2) INSULATOR(CAF2) NANOMETER-THICK LAYERED STRUCTURES ON SI(111) Reviewed

M WATANABE, S MURATAKE, T SUEMASU, H FUJIMOTO, S SAKAMORI, M ASADA, S ARAI

JOURNAL OF ELECTRONIC MATERIALS   21 ( 8 )   783 - 789   1992.8

EPITAXIAL-GROWTH AND ELECTRICAL CONDUCTANCE OF METAL(COSI2) INSULATOR(CAF2) NANOMETER-THICK LAYERED STRUCTURES ON SI(111) Reviewed

M WATANABE, S MURATAKE, T SUEMASU, H FUJIMOTO, S SAKAMORI, M ASADA, S ARAI

JOURNAL OF ELECTRONIC MATERIALS   21 ( 8 )   783 - 789   1992.8

ROOM-TEMPERATURE NEGATIVE DIFFERENTIAL RESISTANCE OF METAL (COSI2) INSULATOR (CAF2) RESONANT TUNNELING DIODE Reviewed

T SUEMASU, M WATANABE, M ASADA, N SUZUKI

ELECTRONICS LETTERS   28 ( 15 )   1432 - 1434   1992.7

TRANSISTOR ACTION OF METAL (COSI2) INSULATOR (CaF₂) HOT-ELECTRON TRANSISTOR STRUCTURE Reviewed

S MURATAKE, M WATANABE, T SUEMASU, M ASADA

ELECTRONICS LETTERS   28 ( 11 )   1002 - 1004   1992.5

Epitaxial Growth of Metal(CoSi2)/Insulator(CaF2) Nanometer-Thick Layered Structure on Si(111) Reviewed

Watanabe Masahiro, Muratake Shigeki, Fujimoto Hiromasa, Sakamori Shigenori, Asada Masahiro, Arai Shigehisa

Jpn J Appl Phys   31 ( 2 )   L116 - L118   1992.2

PROPOSAL AND ANALYSIS OF QUANTUM-INTERFERENCE HIGH-SPEED ELECTRON DEVICES USING METAL-INSULATOR HETEROSTRUCTURE Reviewed

T SAKAGUCHI, M WATANABE, M ASADA

IEICE TRANSACTIONS ON COMMUNICATIONS ELECTRONICS INFORMATION AND SYSTEMS   74 ( 10 )   3326 - 3333   1991.10

LOW-TEMPERATURE (APPROXIMATELY 420-DEGREES-C) EPITAXIAL-GROWTH OF CAF2 SI(111) BY IONIZED-CLUSTER-BEAM TECHNIQUE Reviewed

M WATANABE, H MUGURUMA, M ASADA, S ARAI

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   29 ( 9 )   1803 - 1804   1990.9

Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs

Watanabe, Masahiro, Shigyo, Naoyuki, Hoshii, Takuya, Furukawa, Kazuyoshi, Kakushima, Kuniyuki, Satoh, Katsumi, Matsudai, Tomoko, Saraya, Takuya, Takakura, Toshihiro, Itou, Kazuo, Fukui, Munetoshi, Suzuki, Shinichi, Takeuchi, Kiyoshi, Muneta, Iriya, Wakabayashi, Hitoshi, Nakajima, Akira, Nishizawa, Shin-ichi, Tsutsui, Kazuo, Hiramoto, Toshiro, Ohashi, Hiromichi, Iwai, Hiroshi

2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD)   119 ( 273(SDM2019 68-79) )   311 - 314   2019

少数キャリアライフタイムによる半導体プロセスの評価手法の提案

角嶋邦之, 星井拓也, 渡辺正裕, 執行直之, 古川和由, 更屋拓哉, 高倉俊彦, 伊藤一夫, 福井宗利, 鈴木慎一, 竹内潔, 宗田伊理也, 若林整, 沼沢陽一郎, 小椋厚志, 西澤伸一, 筒井一生, 平本俊郎, 大橋弘通, 岩井洋

電気学会電子・情報・システム部門大会講演論文集(CD-ROM)   2018   2018

Negative Differential Resistance of CoSi₂/CaF₂ Triple Barrier Resonant Tunneling Diode Grown by Local Epitaxy

WATANABE Masahiro, TAMURA Shinpei, KANAZAWA Tohru, JINEN Keisuke, ASADA Masahiro

IEICE technical report. Electron devices   104 ( 622 )   7 - 10   2005.1

Room Temperature Negative Differential Resistance of CdF₂/CaF₂ Resonant Tunneling Diode Grown on Si(100) Substrate

WATANABE Masahiro, KANAZAWA Tohru, JINEN Keisuke, ASADA Masahiro

Technical report of IEICE. SDM   103 ( 631 )   25 - 28   2004.1

CdF₂/CaF₂ Resonant Tunneling Diode Grown on Si(111) and Si(100) Substrate using Nano-area Epitaxy

WATANABE Masahiro, ISHIKAWA Tatsuya, MATSUDA Masaki, KANAZAWA Tohru, ASADA Masahiro

IEICE technical report. Electron devices   101 ( 618 )   65 - 70   2002.1

Metal/insulator heterostructure electron devices.

WATANABE Masahiro, SUEMASU Takashi, ASADA Masahiro

63 ( 2 )   124 - 131   1994.2

Room temperature negative differential resistance characteristics of n-type Si/CaF₂ double-barrier Resonant Tunneling Diode with CaF₂ embedded structure

Takahiro Kobayashi, Ryoya Usami, Kanta Murakami, Ken Hattori, Masahiro Watanabe

The 86th Autumn Meeting of The Japan Society of Applied Physics  2025.9  The Japan Society of Applied Physics

Analysis of 1.27μm Near-Infrared Quantum Cascade Lasers using Si/CaF₂ Heterostructures on SOI Substrate

Zhiyuan Fan, Hyuma Suzuki, Haibo Wang, Masahiro Watanabe

The 72nd The Japan Society of Applied Physics Spring Meeting, 16a-P08-1  2025.3  The Japan Society of Applied Physics

Analysis of 4.1μm Quantum Cascade Lasers using Si/CaF₂ Heterostructures on SOI Substrate

Zhiyuan Fan, Hyuma Suzuki, Haibo Wang, Masahiro Watanabe

The 85th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 18a-P04-1  2024.9  The Japan Society of Applied Physics

Proposal and analysis of p-type near-infrared wavelength quantum cascade lasers using Si/CaF₂ heterostructures

Hyuma Suzuki, Zhiyuan Fan, Haibo Wang, MasahiroWatanabe

The 85th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 18a-P04-2  2024.9  The Japan Society of Applied Physics

The charge retention characteristics of resistive switching memory using Si/CaF₂ quadruple-barrier resonant tunneling structure

Maiko Hoshino, Ryoya Usami, Kanta Murakami, Toya Shioji, Masahiro Watanabe

The 71st The Japan Society of Applied Physics Spring Meeting, 25a-12K-9  2024.3  The Japan Society of Applied Physics

Active layer desings for near-infrared wavelength quantum cascade lasers using CaF₂/Si heterostructure for electric field reduction

Yuta Sugiyama, Hyuma Suzuki, Zhiyuan Fan, Masahiro Watanabe

The 84th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 21p-P20-3  2023.9  The Japan Society of Applied Physics

Room Temperature Pulse Response Characteristics of Resistance Switching Memory using Si/CaF₂ Quadruple-Barrier Resonant Tunneling Structure

Maiko Hoshino, Ryoya Usami, Kanta Murakami, Masahiro Watanabe

The 84th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 20p-A301-15  2023.9  The Japan Society of Applied Physics

Improvement of current density of Si/CaF₂ n-type triple-barrier resonant tunneling diode

Kanta Murakami, Ryoya Usami, Maiko Hoshino, Masahiro Watanabe

The 84th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 22p-P09-2  2023.9  The Japan Society of Applied Physics

Valley current reduction of p-type Si/CaF₂ double-barrier resonant tunneling diode using embedded structure in CaF₂

Ryoya Usami, Maiko Hoshino, Kanta Murakami, Masahiro Watanabe

The 84th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 22p-P09-3  2023.9  The Japan Society of Applied Physics

Room Temperature Characteristics of Resistance Switching Memory using Si/CaF₂ Quadruple-Barrier Resonant Tunneling Structure

Maiko Hoshino, Akinori Ito, Yusuke Suzuki, Ryoya Usami, Kanta Murakami, Gensai Tei, Masahiro Watanabe

The 70th The Japan Society of Applied Physics Spring Meeting, 15p-D411-4  2023.3  The Japan Society of Applied Physics

TCAD simulation of trench-gate IGBTs for prediction of carrier lifetime requirements for future scaled devices Invited International conference

Masahiro Watanabe

2021 IEEE 14th International Conference on ASIC (ASICON 2021)  2021.10 

Proposal and Analysis of Si/CaF₂ Distributed Feedback Waveguide for near- and mid- infrared applications International conference

Gensai Tei, Kenta Kitamura, Long Liu, Yohei Koyanagi, Daiki Sugawara, Masahiro Watanabe

26th MICROOPTICS CONFERENCE (MOC2021)  2021.9 

Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices Invited International conference

Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Toshihiko Takakura, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai

The 5th IEEE Electron Devices Technology and Manufacturing Conference (EDTM2021)  2021.4 

Room Temperature Near Infrared Electroluminescence of Si/CaF₂ Quantum Cascade Laser Structures grown on SOI Substrate International conference

Gensai Tei, Liu Long, Yohei Koyanagi, Masahiro Watanabe

The 2020 International Conference on Solid State Devices and Materials (SSDM2020)  2020.9  The Japan Society of Applied Physics

Negative Differential Resistance in CaF₂/Si Double Barrier Resonant Tunneling Diodes via Plasma Etching Mesa Isolation process International conference

Yoshiro Kumagai, Satoshi Fukuyama, Hiroki Tonegawa, Kizashi Mikami, Kodai Hirose, Kanta Tomizawa, Keisuke Ichikawa, Masahiro Watanabe

32nd International Microprocesses and Nanotechnology Conference (MNC2019)  2019.10 

Design, fabrication, and evaluation of waveguide structure for Si/CaF₂ quantum-well intersubband transition lasers International conference

Long Liu, Soichiro Ono, Gensai Tei, Masahiro Watanabe

The 2019 International Conference on Solid State Devices and Materials (SSDM2019)  2019.9  The Japan Society of Applied Physics

Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs International conference

Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Katsumi Satoh, Tomoko Matsudai, Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shin-ichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Akira Nakajima, Shin-ichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai

The 31st IEEE International Symposium on Power Semiconductor Devices and Ics  2019.3 

Transmission Electron Microscopy Analysis of CaF₂/CdF₂/CaF₂ Resonant Tunneling Diode Structures grown on Si(100) Substrate International conference

M. Watanabe, T. Kanazawa, M. Asada

The 34th International Symposium on Compound Semiconductors (ISCS2007), TuD P8  2007.10 

Resistance switching memory using Si/CaF₂/CdF₂ quantum-well structures International conference

Masahiro Watanabe, Ryo Hirasawa, Yuukou Nakashouji

The 2009 International Conference on Solid State Devices and Materials (SSDM2009), K-2-6  2009.10  The Japan Society of Applied Physics

Enhancement of Multiexciton Generation using Epitaxial Silicon/Fluoride Quantum-dot Structures International conference

Masahiro Watanabe, Hiroshi Oogi

International Symposium on Innovative Solar Cells 2009, T-2  2009.3 

Retention characteristics of resistance switching memory using Si/CaF₂/CdF₂ quantum-well structures International conference

Masahiro Watanabe, Kazuya Uryu

The 2011 International Conference on Solid State Devices and Materials (SSDM2011), P-9-14  2011.9  The Japan Society of Applied Physics

Switching voltage reduction of resistance switching memory using Si/CaF₂/CdF₂ quantum-well structures International conference

Masahiro Watanabe, Yuhkou Nakashouji, Kazuya Tsuchiya

The 2010 International Conference on Solid State Devices and Materials (SSDM2010), F-5-2  2010.9  The Japan Society of Applied Physics

Near Infrared (λ～1.5μm) Room Temperature Electroluminescence from Si/CaF₂ Intersubband Transition Laser Structures Grown on Silicon-on-Insulator Substrate International conference

Minato Segawa, Tatsuya Ohci, Yuya Koshita, Keita Suda, Masahiro Watanabe

18th International Conference on Electron Dynamics in Semiconductors, Optoelectronics, and Nanostructures (EDISON18), TH3-5  2013.7 

Resistance switching memory characteristics of Si/CaF₂/CdF₂ quantum-well structures grown on metal (CoSi₂) Layer International conference

Junya Denda, Kazuya Uryu, Masahiro Watanabe

The 2012 International Conference on Solid State Devices and Materials (SSDM2012), PS-9-6  2012.9  The Japan Society of Applied Physics

Pulsed operation of resistance switching memory of Si/CaF₂/CdF₂ resonant-tunneling quantum-well structures International conference

Junya Denda, Keita Suda, Yuya Kuwata, Masahiro Watanabe

The 2013 International Conference on Solid State Devices and Materials (SSDM2013), A-8-4  2013.9  The Japan Society of Applied Physics

Near-infrared Electroluminescence from Multilayered CdF₂/CaF₂ Quantum Heterostructure Grown on Trench-Patterned Si(111) Substrate

3rd IEEE International Conference of GroupIV Photonics, P29  2006 

Electroluminescence from (CdF₂/CaF₂) Inter-subband Transition Laser Structures on Si substrate

JINEN Keisuke, KIKUCHI Takeshi, UCHIDA Kaoru, KODAIRA Shinji, WATANABE Masahiro, ASADA Masahiro

IEICE technical report. Electron devices  2006.1 

Fluoride based Resonant Tunneling Diode on Si(100) substrate using Nanoarea Local Growth

KANAZAWA Tohru, MOROSAWA Atsushi, FUJII Ryo, WADA Takafumi, WATANABE Masahiro, ASADA Masahiro

IEICE technical report. Electron devices  2006.1 

Fluoride based Resonant Tunneling Diode on Si(100) substrate using Nanoarea Local Growth

KANAZAWA Tohru, MOROSAWA Atsushi, FUJII Ryo, WADA Takafumi, WATANABE Masahiro, ASADA Masahiro

Technical report of IEICE. SDM  2006.1 

Electroluminescence from (CdF₂/CaF₂) Inter-subband Transition Laser Structures on Si substrate

JINEN Keisuke, KIKUCHI Takeshi, UCHIDA Kaoru, KODAIRA Shinji, WATANABE Masahiro, ASADA Masahiro

Technical report of IEICE. SDM  2006.1 

Mid-infrared (～4μm) Electroluminescence from CdF₂/CaF₂ Intersubband transition structures grown on Si(111) substrate International conference

H. Sano, K. Jinen, S. Kodaira, K. Uchida, M. Kumei, Y. Fujihisa, M. Watanabe, M. Asada

15th International Conference on Nonequilibrium carrier Dynamics in Semiconductors (HCIS15), MoP-31  2007 

Theoretical Analysis of Fluoride-based Intersubband Transition Laser on Si substrate

JINEN Keisuke, UCHIDA Kaoru, KODAIRA Shinji, WATANABE Masahiro, ASADA Masahiro

2007.2 

Theoretical Analysis of Fluoride-based Intersubband Transition Laser on Si substrate

JINEN Keisuke, UCHIDA Kaoru, KODAIRA Shinji, WATANABE Masahiro, ASADA Masahiro

Technical report of IEICE. SDM  2007.1 

Fabrication and Characterization of CdF₂/CaF₂ Resonant Tunneling Floating Gate Metal-oxide-semiconductor Field Effect Transistor Structures International conference

Masahiro Watanabe, Takafumi Wada

The 2008 International Conference on Solid State Devices and Materials (SSDM2008), H-9-3  2008.9  The Japan Society of Applied Physics

Feasibility study of CdF₂/CaF₂ intersubband transition lasers

Masahiro Watanabe, Naoto, Sakamaki, Tatsuya Ishikawa

The 4th Pacific Rim Conference on Lasers and Electro-Optics, WC1-5, Chiba Japan.  2001 

Fine-Area Epitaxy of CdF₂/CaF₂ Resonant Tunneling Diode on Si

Masahiro Watanabe, Naoto, Sakamaki, Tatsuya Ishikawa

the First International Workshop on Quantum Nonplanar Nanostructureｓ & Nanoelectronics '01 (QNN '01), TuP-29, Tsukuba, Japan  2001 

ED2000-56 / SDM2000-56 Room Temperature Negative Differential Resistance of CdF₂-CaF₂ Resonant Tunneling Diode on Si(111)

Watanbe Masahiro, Funayama Toshiyuki, Teraji Taishi, Sakamaki Naoto

Technical report of IEICE. SDM  2000.6 

CaF₂/CdF₂ Resonant Tunneling Devices with High Peak-to-Valley Ratio on Silicon Substrate (Invited)

Masahiro Watanabe, Masahiro Asada

Frontier Science Research Conference, Science and Technology of Silicon Materials, S-II, La Jolla/CA, U.S.A.  2001 

Improvement of emission current stability and lowering of emission threshold voltage using tetrahedral amorphous carbon of MIS tunneling emmitter with epitaxial CaF₂ insulator layer

Oshima K, Miyamoto Y, Saito W, Maruyama T, Watanabe M

IEICE technical report. Electron devices  1998.12 

Visible Electroluminescence from Silicon Nanocrystals Embedded in CaF₂ Epilayers on Si(111) with Rapid Thermal Anneal

MARUYAMA Takeo, NAKAMURA Naoto, WATANABE Masahiro

1999.9 

Field-Effect Quantum Devices with Si/CdF₂ Quantum-Well Structure on Si Substrate

Saitoh W, Tsutsui M, Aoki Y, Yamazaki K, Nishiyama J, Watanabe M, Asada M

IEICE technical report. Electron devices  1997.4 

Field-Effect Quantum Devices with Si/CdF₂ Quantum-Well Structure on Si Substrate

Saitoh W, Tsutsui M, Aoki Y, Yamazaki K, Nishiyama J, Watanabe M, Asada M

Technical report of IEICE. SDM  1997.4 

ED2000-56 / SDM2000-56 Room Temperature Negative Differential Resistance of CdF₂-CaF₂ Resonant Tunneling Diode on Si(111)

Watanabe Masahiro, Funayama Toshiyuki, Teraji Taishi, Sakamaki Naoto

IEICE technical report. Electron devices  2000.6 

Resonant Tunneling Diode on Silicon Substrate using Si-CaF₂ and CdF₂-CaF₂ Heterostructures

Watanabe Masahiro, TsuTsui Masafumi, Asada Masahiro

IEICE technical report. Electron devices  2000.2 

Resonant Tunneling Diode on Silicon Substrate using Si-CaF₂ and CdF₂-CaF₂ Heterostructures

Watanabe Masahiro, Tsutsui Masafumi, Asada Masahiro

Technical report of IEICE. SDM  2000.2 

Quantum-Effect Electron Devices Using Metal(CoSi₂)/Insulator(CaF₂)/Si Heterostructures

Asada M, Watanabe M, Suemasu T, Kohno Y, Saitoh W, Mori K

IEICE technical report. Electron devices  1996.4 

Quantum-Effect Devices Using Metal/Insulator Heterostructures on Silicon Substrate

Asada Masahiro, Watanabe Masahiro, Saitoh Wataru, Mori Kaoru, Kohno Yosifumi

Proceedings of the Society Conference of IEICE  1996.9 

Analysis of Metal(CoSi₂)/Insulator(CaF₂)Resonant Tunneling Hot Electron Transistor Using Eqivalent Circuit

Saitoh W, Suemasu T, Kohno Y, Watanabe M, Asada M

1994.9 

Near-infrared Electroluminescence from Multilayered CdF₂/CaF₂ Quantum Heterostructure Grown on Trench-Patterned Si(111) Substrate

3rd IEEE International Conference of GroupIV Photonics, P29  2006 

Negative Differential Resistance of CoSi₂/CaF₂ Triple Barrier Resonant Tunneling Diode Grown by Local Epitaxy

WATANABE Masahiro, TAMURA Shinpei, KANAZAWA Tohru, JINEN Keisuke, ASADA Masahiro

IEICE technical report. Electron devices  2005.1 

Negative Differential Resistance of CoSi₂/CaF₂ Triple Barrier Resonant Tunneling Diode Grown by Local Epitaxy

WATANABE Masahiro, TAMURA Shinpei, KANAZAWA Tohru, JINEN Keisuke, ASADA Masahiro

Technical report of IEICE. SDM  2005.1 

Room temperature electroluminescence of CdF₂/CaF₂ intersubband transition laser structures grown on Si substrate

2005 International conference on Solid State Devices and Materials (SSDM2005),G-4-3  2005 

Optically pumped ultraviolet lasing of BeMgZnSe based quantum well laser structures

12th International Conference on II-VI Compounds  2005 

Room Temperature Negative Differential Resistance of CdF₂/CaF₂ Resonant Tunneling Diode Grown on Si(100) Substrate

WATANABE Masahiro, KANAZAWA Tohru, JINEN Keisuke, ASADA Masahiro

Technical report of IEICE. SDM  2004.1 

Optically pumped ultraviolet lasing of BeMgZnSe based quantum well laser structures

12th International Conference on II-VI Compounds  2005 

High peak-to-valley current ratio of CdF₂/CaF₂ resonant tunneling diode grown on Si(100) substrates,

2005 International conference on Solid State Devices and Materials (SSDM2005),G-1-7  2005 

High peak-to-valley current ratio of CdF₂/CaF₂ resonant tunneling diode grown on Si(100) substrates,

2005 International conference on Solid State Devices and Materials (SSDM2005),G-1-7  2005 

Room temperature electroluminescence of CdF₂/CaF₂ intersubband transition laser structures grown on Si substrate

2005 International conference on Solid State Devices and Materials (SSDM2005),G-4-3  2005 

Negative Differential Resistance of CdF₂/CaF₂ Resonant Tunneling Diode Grown on Si(100) Substrate,

2004 Silicon Nanoelectronics Workshop  2004 

Room Temperature Negative Differential Resistance of CdF₂/CaF₂ Resonant Tunneling Diode Grown on Si(100) Substrate

WATANABE Masahiro, KANAZAWA Tohru, JINEN Keisuke, ASADA Masahiro

IEICE technical report. Electron devices  2004.1 

Structure Dependence of Negative Differential Resistance Characteristics of CdF₂/CaF₂ Resonant Tunneling Diode Grown by Nano-area Local Epitaxy

WATANABE Masahiro, MATSUDA Masaki, FUJIOKA Hirotoshi, KANAZAWA Tohru, ASADA Masahiro

Technical report of IEICE. SDM  2003.2 

Negative Differential Resistance of CdF₂/CaF₂ Resonant Tunneling Diode Grown on Si(100) Substrate,

2004 Silicon Nanoelectronics Workshop  2004 

Memory Effect of CdF₂/CaF₂ Resonant Tunneling Diode grown on p-type Silicon Substrate

The 11th International Conference on Modulated Semiconductor Structures -MSS11-  2003 

Structure Dependence of Negative Differential Resistance Characteristics of CdF₂/CaF₂ Resonant Tunneling Diode grown by Local Epitaxy on Silicon International conference

Masahiro Watanabe, Masaki Matsuda Hirotoshi, Fujioka Tohru Kanazawa, Masahiro Asada

2003 Silicon Nanoelectronics Workshop, 8-07  2003 

Structure Dependence of Negative Differential Resistance Characteristics of CdF2/CaF2 Resonant Tunneling Diode grown by Local Epitaxy on Silicon

Masahiro Watanabe, Masaki Matsuda Hirotoshi, Fujioka Tohru Kanazawa, Masahiro Asada

2003 Silicon Nanoelectronics Workshop, 8-07  2003 

Structure Dependence of Negative Differential Resistance Characteristics of CdF₂/CaF₂ Resonant Tunneling Diode Grown by Nano-area Local Epitaxy

WATANABE Masahiro, MATSUDA Masaki, FUJIOKA Hirotoshi, KANAZAWA Tohru, ASADA Masahiro

IEICE technical report. Electron devices  2003.2 

Memory Effect of CdF₂/CaF₂ Resonant Tunneling Diode grown on p-type Silicon Substrate

The 11th International Conference on Modulated Semiconductor Structures -MSS11-  2003 

Crystal Growth of High-Mg-Content BeMgZnSe Lattice Matched to GaP(001) Substrate Using BeZnSe Buffer Layer

Y. Niiyama, T. Yokoyama, M. Watanabe

First Asia-Pacific Workshop on Widegap Semiconductors, P118  2003 

Room Temperature Negative Differential Resistance of CdF₂/CaF₂ Resonant Tunneling Diode grown on Si using Nanoarea Local Epitaxy

Masahiro Watanabe, Tatsuya Ishikawa, Masaki Matsuda Tohru Kanazawa, Masahiro Asada

26th International Conference on the Physics of Semiconductors, P157  2002 

CdF₂/CaF₂ Resonant Tunneling Diode Grown on Si(111) and Si(100) Substrate using Nano-area Epitaxy

WATANABE Masahiro, ISHIKAWA Tatsuya, Matsuda Masaki, Kanazawa Tohru, ASADA Masahiro

IEICE technical report. Electron devices  2002.1 

Room Temperature Negative Differential Resistance of CdF₂/CaF₂ Resonant Tunneling Diode grown on Si(100) substrate using Nanoarea Local Epitaxy

Masahiro Watanabe, Tatsuya Ishikawa, Masaki Matsuda Tohru Kanazawa, Masahiro Asada

44th 2002 Electronic Materials Conference, Z5  2002 

Systematic variation of negative differential resistance characteristics of CdF₂/CaF₂ Resonant Tunneling Diode on Si(111) grown by Nanoarea Local Epitaxy

Masahiro Watanabe, Tatsuya, Ishikawa Masahiro, Matsuda Tohru Kanazawa, Masahiro Asada

The Second International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '02 (QNN '02), Tu4-3  2002 

CdF₂/CaF₂ Resonant Tunneling Diode Grown on Si(111) and Si(100) Substrate using Nano-area Epitaxy

WATANABE Masahiro, ISHIKAWA Tatsuya, Matsuda Masaki, Kanazawa Tohru, ASADA Masahiro

Technical report of IEICE. SDM  2002.1 

Epitaxial growth of BeZnSe on CaF₂/Si(111) substrate

Takeo Maruyama, Naoto Nakamura, Masahiro Watanabe

43rd 2001 Electronic Materials Conference, Y3, Notre Dame, U.S.A.  2001 

Systematic variation of negative differential resistance characteristics of CdF₂/CaF₂ Resonant Tunneling Diode on Si(111) grown by Nanoarea Local Epitaxy

Masahiro Watanabe, Tatsuya, Ishikawa Masahiro, Matsuda Tohru Kanazawa, Masahiro Asada

The Second International Workshop on Quantum Nonplanar Nanostructures & Nanoelectronics '02 (QNN '02), Tu4-3  2002 

Room Temperature Negative Differential Resistance of CdF₂/CaF₂ Resonant Tunneling Diode grown on Si using Nanoarea Local Epitaxy

Masahiro Watanabe, Tatsuya Ishikawa, Masaki Matsuda Tohru Kanazawa, Masahiro Asada

26th International Conference on the Physics of Semiconductors, P157  2002 

Selective growth of CdF₂/CaF₂ resonant tunneling diode nanostructure on Si

Masahiro Watanabe, Naoto, Sakamaki, Tatsuya Ishikawa, Daisuke Okamoto

43rd 2001 Electronic Materials Conference, Y4, Notre Dame, U.S.A.  2001 

Room Temperature Negative Differential Resistance with High Peak-to-Valley Crrent Ratio of CdF₂/CaF₂ Resonant Tunneling Diode on Silicon

Masahiro Watanabe, Naoto, Sakamaki, Tatsuya Ishikawa

Thirteenth International Conference on Indiumu Phosphide and Related Materials (IPRM'01), WP-30, Nara, Japan  2001 

Room Temperature Negative Differential Resistance with High Peak-to-Valley Crrent Ratio of CdF₂/CaF₂ Resonant Tunneling Diode on Silicon

Masahiro Watanabe, Naoto, Sakamaki, Tatsuya Ishikawa

Thirteenth International Conference on Indiumu Phosphide and Related Materials (IPRM'01), WP-30, Nara, Japan  2001 

CaF₂/CdF₂ Resonant Tunneling Devices with High Peak-to-Valley Ratio on Silicon Substrate (Invited) Invited

Masahiro Watanabe, Masahiro Asada

Frontier Science Research Conference, Science and Technology of Silicon Materials, S-II, La Jolla/CA, U.S.A.  2001 

Epitaxial growth of BeZnSe on CaF₂/Si(111) substrate

Takeo Maruyama, Naoto Nakamura, Masahiro Watanabe

43rd 2001 Electronic Materials Conference, Y3, Notre Dame, U.S.A.  2001 

Selective growth of CdF₂/CaF₂ resonant tunneling diode nanostructure on Si

Masahiro Watanabe, Naoto, Sakamaki, Tatsuya Ishikawa, Daisuke Okamoto

43rd 2001 Electronic Materials Conference, Y4, Notre Dame, U.S.A.  2001 

Feasibility study of CdF₂/CaF₂ intersubband transition lasers

Masahiro Watanabe, Naoto, Sakamaki, Tatsuya Ishikawa

The 4th Pacific Rim Conference on Lasers and Electro-Optics, WC1-5, Chiba Japan.  2001 

Fine-Area Epitaxy of CdF₂/CaF₂ Resonant Tunneling Diode on Si

Masahiro Watanabe, Naoto, Sakamaki, Tatsuya Ishikawa

the First International Workshop on Quantum Nonplanar Nanostructureｓ & Nanoelectronics '01 (QNN '01), TuP-29, Tsukuba, Japan  2001 

I-V characteristics of CdF₂/CaF₂ resonant tunneling diodes on Si(100) substrate by nano-area local growth method

Tohru Kanazawa, Ryo Fujii, Takashi Wada, Yusuke Suzuki, Masahiro Watanabe, Masahiro Asada

The 67th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 30p-RE-14  2006.8  The Japan Society of Applied Physics

Theoretical Analysis of Intersubband Transition Time in (CdF₂/CaF₂) Quantum Well Structure

Keisuke Jinen, Kaoru Uchida, Shinji Kodaira, Masaya Kumei, Hiroshi Sano, Masahiro Watanabe, Masahiro Asada

The 67th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 30p-RE-17  2006.8  The Japan Society of Applied Physics

Mid-infrared (～4μm) Electroluminescence from CdF₂/CaF₂ Quantum Heterostructure grown on Si(111) substrate

Hiroshi Sano, Keisuke Jinen, Kaoru Uchida, Shinji Kodaira, Masaya Kumei, Yuuki Fujihisa, Masahiro Watanabe, Masahiro Asada

The 54th Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, 29p-T-19  2007.3  The Japan Society of Applied Physics

Reduction of Leakage Current using Nano-area Local Epitaxy for CdF₂/CaF₂ Intersubband Transition Lasers on Si Substrate

Yuuki Fujihisa, Masaya Kumei, Shunsuke Kajiura, Yusuke Sasaki, Masahiro Watanabe, Masahiro Asada

The 68th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 5a-N-5  2007.9  The Japan Society of Applied Physics

Fabrication of Three-Terminal Integrated Devices using CdF₂/CaF₂ Resonant Tunneling Gate Structure

Takashi Wada, Yusuke Suzuki, Ryo Hirasawa, Masahiro Watanabe

The 55th Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, 30p-E-2  2008.3  The Japan Society of Applied Physics

Characterization of resistance switching devices using silicon / fluoride resonant tunneling structures

Ryo Hirasawa, Yukou Nakasyouji, Masahiro Watanabe

The 56th Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, 30a-ZB-5  2009.3  The Japan Society of Applied Physics

Photocurrent measurement of epitaxial CaF₂/Si quantum-dot structures

Hiroshi Oogi, Masahiro Watanabe

The 57th Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, 20a-TG-10  2010.3  The Japan Society of Applied Physics

Switching voltage reduction of resistance switching devices using silicon / fluoride resonant tunneling structures

Yukou Nakashouji, Kazuya Tsuchiya, Masahiro Watanabe

The 71st Autumn Meeting of The Jpn. Soc. of Appl. Phys, 16a-NC-1  2010.9  The Japan Society of Applied Physics

EL Characteristics of CdF₂/CaF₂ quantum heterostructures on Si substrate

Keisuke Jinen, Takeshi Kikuchi, Masahiro Watanabe, Masahiro Asada

The 66th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 9a-W-6  2005.9  The Japan Society of Applied Physics

Growth temperature dependence of CaF₂/CdF₂/CaF₂ quantum-well structures on Si(100) substrate

Tohru Kanazawa, Atsushi Morosawa, Ryo Fujii, Takashi Wada, Masahiro Watanabe, Masahiro Asada

The 66th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 9a-W-5  2005.9  The Japan Society of Applied Physics

Atomic Step Control of Si Substrate Surface for Fluoride Based Intersubband Transition Lasers

Shinji Kodaira, Keisuke Jinen, Kaoru Uchida, Masaya Kumei, Hiroshi Sano, Masahiro Watanabe, Masahiro Asada

The 67th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 30p-RE-15  2006.8  The Japan Society of Applied Physics

Fabrication of Plasmon Waveguide with SOI structure for Fluoride-Based Intersubband Transition Lasers

Kaoru Uchida, Keisuke Jinen, Shinji Kodaira, Masaya Kumei, Hiroshi Sano, Masahiro Watanabe, Masahiro Asada

The 67th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 30p-RE-16  2006.8  The Japan Society of Applied Physics

Measurement of refractive index of BeMgZnSe using spectroscopic ellipsometry

Yuuki Niiyama, Takayuki Murata, Masahiro Watanabe

The 65th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 2a-ZQ-10  2004.9  The Japan Society of Applied Physics

Room temperature shortest wavelength (λ=329nm) photoluminescence of BeMgZnSe

Takayuki Murata, Yuuki Niiyama, Masahiro Watanabe

The 65th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 2a-ZQ-9  2004.9  The Japan Society of Applied Physics

Theoretical analysis of BeMgZnSe ultraviolet quantum well laser – cladding layer Mg content dependence of threshold current density –

Yuuki Niiyama, Takeshi Yokoyama, Takayuki Murata, Takeo Maruyama, Masahiro Watanabe

The 64th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 30p-B-13  2003.8  The Japan Society of Applied Physics

Temperature dependence of photoluminescence energy of BeMgZnSe

Yuuki Niiyama, Takeshi Yokoyama, Takayuki Murata, Masahiro Watanabe

The 64th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 30p-B-12  2003.8  The Japan Society of Applied Physics

Surface morphologies of BeZnSe grown by migration enhanced epitaxy on GaP(001) substrate

Takeshi Yokoyama, Yuuki Niiyama, Masahiro Watanabe

The 64th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 30p-B-11  2003.8  The Japan Society of Applied Physics

Structure dependence of negative differential resistance characteristics of CdF₂/CaF₂ resonant tunneling diode on Si(100) substrate

Tohru Kanazawa, Masami Matsuda, Masahiro Watanabe, Masahiro Asada

The 64th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 30p-ZF-14  2003.8  The Japan Society of Applied Physics

Improvement of luminescence properties of BeZnSe-MBE on MEE buffer layer

Takeshi Yokoyama, Yuuki Niiyama, Takayuki Murata, Masahiro Watanabe

The 51st Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, 29p-P12-13  2004.3  The Japan Society of Applied Physics

Design and production of BeMgZnSe based waveguide structures for optically pumping

Yuuki Niiyama, Takeshi Yokoyama, Takayuki Murata, Masahiro Watanabe

The 51st Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, 29p-P12-12  2004.3  The Japan Society of Applied Physics

Content dependence of interband transition process in BeMgZnSe

Yuuki Niiyama, Takeshi Yokoyama, Takeo Maruyama, Masahiro Watanabe

The 50th Spring Meeting of The Jpn. Soc. of Appl. Phys. and Related Societies, 29p-X-2  2003.3  The Japan Society of Applied Physics

Crystal growth of high Mg-content BeMgZnSe on GaP(001) substrate

Takeshi Yokoyama, Yuuki Niiyama, Masahiro Watanabe

The 50th Spring Meeting of The Jpn. Soc. of Appl. Phys. and Related Societies, 29p-X-1  2003.3  The Japan Society of Applied Physics

Fabrication and characterization of CdF₂/CaF₂ resonant tunneling diode on double step Si(100) 2°off substrate

Tohru Kanazawa, Masami Matsuda, Masahiro Watanabe, Masahiro Asada

The 50th Spring Meeting of The Jpn. Soc. of Appl. Phys. and Related Societies, 29a-ZE-3  2003.3  The Japan Society of Applied Physics

Memory effect due to charge and discharge of CdF₂/CaF₂ resonant tunneling diode

Masami Matsuda, Tohru Kanazawa, Masahiro Watanabe, Masahiro Asada

The 50th Spring Meeting of The Jpn. Soc. of Appl. Phys. and Related Societies, 29a-ZE-5  2003.3  The Japan Society of Applied Physics

Epitaxial growth of BeMgZnSe on GaP(001)

Naoto Nakamura, Takeo Maruyama, Yuki Niiyama, Masahiro Watanabe

The 62nd Autumn Meeting of The Jpn. Soc. of Appl. Phys., 11a-P1-3  2001.9  The Japan Society of Applied Physics

UV photoluminescence from BeZnSe grown on GaP (001) substratre at room temperature

Takeo Maruyama, Naoto Nakamura, Yuuki Niiyama, Masahiro Watanabe

The 62nd Autumn Meeting of The Jpn. Soc. of Appl. Phys., 11a-P1-2  2001.9  The Japan Society of Applied Physics

Fabrication and characterization of CdF₂/CaF₂ resonant tunneling diode on Si(100) substrate

Masami Matsuda, Tatsuya Ishikawa, Tohru Kanazawa, Masahiro Watanabe, Masahiro Asada

The 49th Spring Meeting of The Jpn. Soc. of Appl. Phys. and Related Societies, 27p-YH-3  2002.3  The Japan Society of Applied Physics

Fabrication of vertical MOSFET integrated with resonant tunneling diode

Hirotomo Fujioka, Masafumi Tsutsui, Tatsuya Ishikawa, Masahiro Watanabe, Masahiro Asada

The 49th Spring Meeting of The Jpn. Soc. of Appl. Phys. and Related Societies, 30a-H-8  2002.3  The Japan Society of Applied Physics

Quantum-well thickness dependence of NDR characteristics of CdF₂/CaF₂ resonant tunneling diode

Masami Matsuda, Tohru Kanazawa, Masahiro Watanabe, Masahiro Asada

The 63rd Autumn Meeting of The Jpn. Soc. of Appl. Phys, 25p-P9-11  2002.9  The Japan Society of Applied Physics

UV-Photoluminescence of BeMgZnSe-BeZnSe DH structure on GaP(100) substrate

Yuuki Niiyama, Takeo Maruyama, Masahiro Watanabe

The 63rd Autumn Meeting of The Jpn. Soc. of Appl. Phys, 26p-YE-7  2002.9  The Japan Society of Applied Physics

Analysis of CaF₂ Based Heterostructure Intersubband Transition Lasers on SOI

Keisuke Jinen, Masahiro Watanabe, Masahiro Asada

The 50th Spring Meeting of The Jpn. Soc. of Appl. Phys. and Related Societies, 28p-ZE-4  2003.3  The Japan Society of Applied Physics

Fabrication and characterization of CdF₂/CaF₂ resonant tunneling diode by selective area growth

Tatsuya Ishikawa, Naoto Sakamaki, Daisike Okamoto, Masahiro Watanabe

The 48th Spring Meeting of The Jpn. Soc. of Appl. Phys. and Related Societies, 29a-YD-2  2001.3  The Japan Society of Applied Physics

Inpurity control of eptaxial ZnO thin films grown on CaF₂/Si(111) by N, Ga codoping

Shunichi Okano, Mitsunori Suzuki, Masahiro Watanabe

The 48th Spring Meeting of The Jpn. Soc. of Appl. Phys. and Related Societies, 31a-YL-3  2001.3  The Japan Society of Applied Physics

Oxygen ambient annealing of ZnO thin films on CaF₂/Si substrate

Mitsunori Suzuki, Shunichi Okano, Masahiro Watanabe

The 48th Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, 31a-YL-2  2001.3  The Japan Society of Applied Physics

Analysis of Si/CaF₂ intersubband transition lasers

Katsunori Osada, Yuichi Aoki, Mika Tsuganezawa, Masahiro Watanabe

The 45th Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, 30p-R-4  1998.3  The Japan Society of Applied Physics

Ion beam epitaxial growth of CaF₂ on Si(111) 1degree substrate with controlled terrace-width

Yoshifumi Iketani, Masahiro Watanabe, Masahiro Asada

The 60th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 1p-T-4  1999.9  The Japan Society of Applied Physics

Fabrication and characteristics of resonant tunneling diodes with Si/CaF₂ heterostructures

Masafumi Tsutsui, Masahiro Watanabe, Masahiro Asada

The 60th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 2p-ZL-9  1999.9  The Japan Society of Applied Physics

EL spectra from nano-crystalline Si embedded in CaF₂/Si(111) thin film

Naoto Nakamura, Takeo Maruyama, Masahiro Watanabe

The 60th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 3p-ZN-15  1999.9  The Japan Society of Applied Physics

Fabrication and characterization of Si/CaF₂ double barrier resonant tunneling diode on Si(111) 1°off substrate

Yoshifumi Iketani, Masahiro Watanabe, Masahiro Asada

The 47th Spring Meeting of The Jpn. Soc. of Appl. Phys. and Related Societies, 30a-YD-8  2000.3  The Japan Society of Applied Physics

Room temperature negative differential resistance of CdF₂/CaF₂ resonant tunneling diode

Toshiyuki Funayama, Taishi Teraji, Masahiro Watanabe

The 47th Spring Meeting of The Jpn. Soc. of Appl. Phys. and Related Societies, 30a-YD-7  2000.3  The Japan Society of Applied Physics

UV photoluminescence from ZnO/CaF₂ heteroepitaxial structure on Si(111) substrate

Mitsunori Suzuki, Shunichi Okano, Masahiro Watanabe

The 61st Autumn Meeting of The Jpn. Soc. of Appl. Phys., 3p-ZK-1  2000.9  The Japan Society of Applied Physics

Crystal growth of BeSe on CaF₂/Si(111) substrate

Takeo Maruyama, Naoto Nakamura, Masahiro Watanabe

The 61st Autumn Meeting of The Jpn. Soc. of Appl. Phys., 4p-Z-8  2000.9  The Japan Society of Applied Physics

Room temperature negative differential resistance of CdF₂/CaF₂ resonant tunneling diode

Naoto Sakamaki, Masahiro Watanabe

The 61st Autumn Meeting of The Jpn. Soc. of Appl. Phys., 6a-ZR-9  2000.9  The Japan Society of Applied Physics

RTA ambient dependence of PL spectra from nano-crystalline Si embedded in CaF₂/Si(111) thin film

Takeo Maruyama, Naoto Nakamura, Masahiro Watanabe

The 59th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 16a-ZE-8  1998.9  The Japan Society of Applied Physics

UV electroluminescence from CaF₂/ZnO/CaF₂ heteroepitaxial structure on Si(111) substrate

Shunichi Okano, Yasuhisa Maeda, Masahiro Watanabe

The 46th Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, 28a-ZA-9  1999.3  The Japan Society of Applied Physics

Relation of Resistance of Ultra Thin CoSi₂ Films on CaF₂ and Crystal Quality of CaF₂

Wataru Saitoh, Kaoru Mori, Hidekazu Sugiura, Takeo Maruyama, Masahiro Watanabe, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 8p-ZE-17  1996.9  The Japan Society of Applied Physics

Electroluminescence spectra from nano-crystalline Si embedded in CaF₂

Takeshi Matsunuma, Takeo Maruyama, Masahiro Watanabe, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 8p-V-15  1996.9  The Japan Society of Applied Physics

Reduction of the Size Fluctuation of Quantum-Wire Structures Fabricated by Proximity Effect Correction

X. Y. Jia, Takashi Kojima, Yoshinori Hayafune, Shigehisa Tamura, Masahiro Watanabe, Shigehisa Arai

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29a-X-4  1997.3  The Japan Society of Applied Physics

Epitaxial Growth of Si/CdF₂/CaF₂ Heterostructures on Si Substrate

Wataru Saitoh, Yuichi Aoki, Jun Nishiyama, Masahiro Watanabe, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30a-A-3  1997.3  The Japan Society of Applied Physics

Fabrication of nano-structure ZnO on CaF₂/Si(111) and its photoluminescence spectra

Atsushi Yamada, Yasuhisa Maeda, Masahiro Watanabe

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 3a-ZH-9  1997.10  The Japan Society of Applied Physics

Epitaxial growth of CaF₂ on low-off angle Si(111) substrate using ion assisted epitaxy

Masahiro Watanabe, Yoshifumi Iketani, Hidekazu Sugiura, Kazuhito Yoshida

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 4p-V-16  1997.10  The Japan Society of Applied Physics

Epitaxial growth of nanometer-thick CaF₂/CdF₂ superlattice using partially ionized beam epitaxy

Yuichi Aoki, Wataru Saitoh, Jun Nishiyama, Masahiro Watanabe

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 5a-ZF-2  1997.10  The Japan Society of Applied Physics

Negative Differential Resistance of the Triple-barrier RTD using Epitaxial CaF₂/CdF₂ Superlattice

Yuichi Aoki, Mika Tsuganezawa, Wataru Saitoh, Masahiro Watanabe

The 45th Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, 28a-R-2  1998.3  The Japan Society of Applied Physics

Growth condition dependence of photoluminescence spectra from nano-cryatalline Si embedded in CaF₂/Si(111) thin film

Takeo Maruyama, Sotaro Ikeda, Masahiro Watanabe

The 45th Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, 29a-p-8  1998.3  The Japan Society of Applied Physics

Electroluminescence spectra from ZnO nano-structure on CaF₂/Si(111)

Yasuhisa Maeda, Atsushi Yamada, Masahiro Watanabe

The 45th Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, 29a-S-2  1998.3  The Japan Society of Applied Physics

Analysis of CaF₂/CdF₂ Intersubband Transition Lasers

Yuichi Aoki, Jun Nishiyama, Wataru Saitoh, Masahiro Watanabe, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 28a-ZA-6  1997.3  The Japan Society of Applied Physics

Fabrication of metal(CoSi₂)/insulator(CaF₂) resonant tunneling hot electron transistor (II)

Takashi Suemasu, Yoshifumi Kohno, Wataru Saitoh, Masahiro Watanabe, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 19p-T-9  1994.9  The Japan Society of Applied Physics

Analysis of resistance switching characteristics of CaF₂/Si/CaF₂ quantum-well structures

Takumi Kaneko, Yoshiro Kumagai, Koudai Hirose, Hiroki Tonegawa, Kizashi Mikami, Kanta Tomizawa, Honami Sato, Masahiro Watanabe

The 6７th The Japan Society of Applied Physics Spring Meeting, 13a-PA5-8  2020.3  The Japan Society of Applied Physics

Formation of metal Co fine particles on CaF₂/Si(111)

Masahiro Watanabe, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 20p-MF-14  1994.9  The Japan Society of Applied Physics

Room Temperature Negative Differential Resistance of Si/CaF₂ p-type Triple-barrier Resonant Tunneling Diodes

Honami Sato, Yoshiro Kumagai, Kizashi Mikami, Hiroki Tonegawa, Koudai Hirose, Kanta Tomizawa, Takumi Kaneko, Masahiro Watanabe

The 67th The Japan Society of Applied Physics Spring Meeting, 13a-PA5-7  2020.3  The Japan Society of Applied Physics

Photoluminescence spectra of CaF₂/Si(111) thin film including Si fine particles

Masahiro Watanabe, Fumitaka Iizuka, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29a-H-10  1995.3  The Japan Society of Applied Physics

Fabrication and room temperature operation of Metal(CoSi₂)/ Insulator(CaF₂) nanometer-thick small-area hot electron transistor

Wataru Saitoh, Takashi Suemasu, Yoshifumi Kohno, Masahiro Watanabe, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30p-ZK-7  1995.3  The Japan Society of Applied Physics

Room Temperature Negative Differential Resistance of Si/CaF₂ p-type Triple-barrier Resonant Tunneling Diodes

Honami Sato, Yoshiro Kumagai, Kanta Tomizawa, Takumi Kaneko, Masahiro Watanabe

The 68th The Japan Society of Applied Physics Spring Meeting, 18p-Z23-7  2021.3  The Japan Society of Applied Physics

Reduction of operating voltage in Metal(CoSi₂)/ Insulator(CaF₂) RHET

Takashi Suemasu, Yoshifumi Kohno, Wataru Saitoh, Kaoru Mori, Masahiro Watanabe, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30p-ZK-6  1995.3  The Japan Society of Applied Physics

Design and fabrication of distributed feedback waveguide using Si/CaF₂ heterostructures

Kenta Kitamura, Gensai Tei, Long Liu, Yohei Koyanagi, Daiki Sugawara, Masahiro Watanabe

The 82nd Autumn Meeting of The Jpn. Soc. of Appl. Phys., 23a-P11-16  2021.9  The Japan Society of Applied Physics

Nanometer crystalline Si embedded in CaF₂/Si(111) thin film

Masahiro Watanabe, Masahiro Asada, Takeshi Matsunuma

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 26p-ZD-11  1995.9  The Japan Society of Applied Physics

Evaluation of valence band difference (∆E_V) at Si/CaF₂ interface using p-type single barrier tunneling diodes

Daiki Sugawara, Long Liu, Gensai Tei, Yohei Koyanagi, Kenta Kitamura, Masahiro Watanabe

The 82nd Autumn Meeting of The Jpn. Soc. of Appl. Phys., 23a-P11-18  2021.9  The Japan Society of Applied Physics

Fabrication and Room Temperature Characterisitics of Small Area Metal (CoSi₂)/ Insulator (CaF₂) QIT

Kaoru Mori, Wataru Saitoh, Takashi Suemasu, Yoshifumi Kohno, Masahiro Watanabe, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 28p-ZM-9  1995.9  The Japan Society of Applied Physics

Evaluation of valence band difference (∆E_V) at Si/CaF₂ interface usingp-type single barrier tunneling diodes and double barrier resonant tunneling diodes

Daiki Sugawara, Liu Long, Gensai Tei, Yohei Koyanagi, Kenta Kitamura, Masahiro Watanabe

The 69th The Japan Society of Applied Physics Spring Meeting, 22p-P02-1  2022.3  The Japan Society of Applied Physics

Seventy nm pitch CaF₂ inorganic resist pattern by electron beam exposure

Tetsuya Hattori, HiroHongo, Yasuyuki Miyamoto, Takeshi Matsunuma, Masahiro Watanabe, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 26a-SZW-27  1996.3  The Japan Society of Applied Physics

Effect of As irradiation on the surface roughness of Si thin films grown on CaF₂

Masataka Saito, Gensai Tei, Liu Long, Yohei Koyanagi Daiki Sugawara, Masahiro Watanabe

The 69th The Japan Society of Applied Physics Spring Meeting, 24p-E103-9  2022.3  The Japan Society of Applied Physics

Growth condition dependence of electroluminescence from nanometer crystalline Si embedded in CaF₂

Takeshi Matsunuma, Takeo Maruyama, Masahiro Watanabe, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 26a-ZF-5  1996.3  The Japan Society of Applied Physics

Room temperature negative differential resistance of Si/CaF₂ double-barrier resonant tunneling diodes grown by surfactant epitaxy

Yusuke Suzuki, Akinori Ito, Masataka Saito, Maiko Hoshino, Ryoya Usami, Kanta Murakami, Masahiro Watanabe

The 83rd Autumn Meeting of The Jpn. Soc. of Appl. Phys., 22p-P14-2  2022.9  The Japan Society of Applied Physics

Theoretical Analysis of Metal/Insulator Field Effect Tunneling Transistor

Wataru Saitoh, Katsuyuki Yamazaki, Masahiro Asada, Masahiro Watanabe

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 26a-W-6  1996.3  The Japan Society of Applied Physics

Leakage current reduction of Si/CaF₂ p-type Resonant Tunneling Diode using embedded structure in CaF₂

Akinori Ito, Yusuke Suzuki, Maiko Hoshino, Ryoya Usami, Kanta Murakami, Masahiro Watanabe

The 83rd Autumn Meeting of The Jpn. Soc. of Appl. Phys., 22p-P14-1  2022.9  The Japan Society of Applied Physics

Transfer Efficiency of Hot Electrons from NDR Characteristics of a Quantum Interference Transistor

Takashi Suemasu, Wataru Saitoh, Kaoru Mori, Yoshifumi Kohno, Masahiro Watanabe, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 28p-W-11  1996.3  The Japan Society of Applied Physics

Aanalysis of 1.6 µm wavelength quantum cascade lasers using Si/CaF₂ heterostructures

Gensai Tei, Long Liu, Masataka Saito, Koyo Matsuura, Yuta Sugiyama, Masahiro Watanabe

The 83rd Autumn Meeting of The Jpn. Soc. of Appl. Phys., 22p-P05-1  2022.9  The Japan Society of Applied Physics

Analysis of near-infrared wavelength quantum cascade laser using CaF₂/Si heterostructures

Youhei Koyanagi, Gensai Tei, Liu Long, Masahiro Watanabe

The 81st Autumn Meeting of The Jpn. Soc. of Appl. Phys., 9a-Z04-3  2020.9  The Japan Society of Applied Physics

Preparation of Metal (CoSi₂)/ Insulator (CaF₂) resonant tunneling hot electron transistor

Nobuhiro Suzuki, Yoshifumi Kohno, Takashi Suemasu, Masahiro Watanabe, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 1a-D-3  1993.4  The Japan Society of Applied Physics

Room Temperature Negative Differential Resistance of Si/CaF₂ Double-barrier Resonant Tunneling Diodes

Koudai Hirose, Satoshi Fukuyama, Yoshiro Kumagai, Hiroki Tonegawa, Masahiro Watanabe

The 79th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 21p-PB4-3  2018.9  The Japan Society of Applied Physics

Control of the applied voltage of NDR in Metal (CoSi₂)/ Insulator (CaF₂) resonant tunneling diode

Takashi Suemasu, Masahiro Watanabe, Jun Suzuki, Masahiro Asada, Nobuhiro Suzuki

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 1a-D-2  1993.4  The Japan Society of Applied Physics

Evaluation of current-voltage characteristics of single barrier tunneling diode using atomically-thin CaF₂/Si heterostructure

Satoshi Fukuyama, Masahiro Watanabe

The 79th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 21p-PB4-4  2018.9  The Japan Society of Applied Physics

STM observation of Si/CaF₂/Si(111) cross section

Takashi Suemasu, Daishi Sonoda, Masahiro Watanabe, Masahiro Asada, Kazuhito Furuya

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29p-ZX-7  1993.9  The Japan Society of Applied Physics

Room temperature negative differential resistance of CaF₂/Si/CaF₂ resonant-tunneling structures fabricated by dry etching

Yoshiro Kumagai, Soichiro Ohno, Koudai Hirose, Satoshi Fukuyama, Hiroki Tonegawa, Masahiro Watanabe

The 79th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 21p-PB4-5  2018.9  The Japan Society of Applied Physics

Fabrication of Metal (CoSi₂)/ Insulator (CaF₂) fine structure hot electron transistor

Nobuhiro Suzuki, Takashi Suemasu, Masahiro Watanabe, Masahiro Asada, Yoshifumi Kohno

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29p-ZX-6  1993.9  The Japan Society of Applied Physics

Theoretical analysis of multiple-barrier silicon/fluoride heterostructure resonant tunneling diodes with metal emitter

Kensuke Ichikawa, Hiroki Tonegawa, Koudai Hirose, Kizashi Mikami, Satoshi Fukuyama, Masahiro Watanabe

The 66th The Japan Society of Applied Physics Spring Meeting, 10p-PA4-6  2019.3  The Japan Society of Applied Physics

Metal (CoSi₂)/ Insulator (CaF₂) resonant tunneling transistor

Takashi Suemasu, Yoshifumi Kohno, Nobuhiro Suzuki, Masahiro Watanabe, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29p-ZX-5  1993.9  The Japan Society of Applied Physics

Room temperature negative differential resistance of p-type resonant tunneling diodes using atomically thin CaF₂/Si heterostructures

Kizashi Mikami, Satoshi Fukuyama, Masahiro Watanabe

The 66th The Japan Society of Applied Physics Spring Meeting, 10p-PA4-7  2019.3  The Japan Society of Applied Physics

Quantum effect devices using metal/insulator heterostructures

Masahiro Asada, Masahiro Watanabe, Takashi Suemasu, Nobuhiro Suzuki, Yoshifumi Kohno

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29p-MA-6, (Symposium)  1994.3  The Japan Society of Applied Physics

Analysis of near-infrared wavelength quantum cascade laser using CaF₂/Si heterostructures

Gensai Tei, Soichiro Ono, Liu Long, Masahiro Watanabe

The 66th The Japan Society of Applied Physics Spring Meeting, 12a-PB4-22  2019.3  The Japan Society of Applied Physics

Formation of fine metal Co particles on insulator CaF₂

Masahiro Watanabe, Hiroshi Iwai, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30p-S-17  1994.3  The Japan Society of Applied Physics

Fabrication process of near-infrared wavelength quantum cascade laser using CaF₂/Si heterostructures

Gensai Tei, Long Liu, Yohei Koyanagi, Masahiro Watanabe

The 80th Autumn Meeting of The Jpn. Soc. Of Appl. Phys., 20p-PB3-7  2019.9  The Japan Society of Applied Physics

Fabrication of metal(CoSi₂)/ insulator(CaF₂) fine-size hot electron transistor(II)

Nobuhiro Suzuki, Takashi Suemasu, Masahiro Watanabe, Masahiro Asada, Yoshifumi Kouno

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30p-S-16  1994.3  The Japan Society of Applied Physics

Room Temperature Negative Differential Resistance of Si/CaF₂ Bipolar Double-barrier Resonant Tunneling Diodes

Koudai Hirose, Yoshiro Kumagai, Hiroki Tonegawa, Kanta Tomizawa, Takumi Kaneko, Honami Sato, Masahiro Watanabe

The 80th Autumn Meeting of The Jpn. Soc. Of Appl. Phys., 20p-PB3-6  2019.9  The Japan Society of Applied Physics

Fabrication of metal(CoSi₂)/insulator(CaF₂) tunneling hot electron resonant transistor using new process

Yoshifumi Kouno, Takashi Suemasu, Nobuhiro Suzuki, Masahiro Watanabe, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30p-S-15  1994.3  The Japan Society of Applied Physics

Room temperature negative differential resistance of p-type resonant tunneling diodes using atomically thin CaF₂/Si heterostructures

Kizashi Mikami, Yoshiro Kumagai, Koudai Hirose, Kanta Tomizawa, Hiroki Tonegawa, Takumi Kaneko, Honami Sato, Masahiro Watanabe

The 80th Autumn Meeting of The Jpn. Soc. Of Appl. Phys., 20p-PB3-5  2019.9  The Japan Society of Applied Physics

Fabrication of metal(CoSi₂)/ insulator(CaF₂) resonant tunneling hot electron transistor

Takashi Suemasu, Yoshifumi Kouno, Nobuhiro Suzuki, Wataru Saitoh, Masahiro Watanabe, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 30p-S-14  1994.3  The Japan Society of Applied Physics

Room temperature negative differential resistance of CaF₂/Si/SiO₂ double-barrier resonant tunneling diodes

Kanta Tomizawa, Yoshiro Kumagai, Hiroki Tonegawa, Kizashi Mikami, Koudai Hirose, Takumi Kaneko, Honami Sato, Masahiro Watanabe

The 80th Autumn Meeting of The Jpn. Soc. Of Appl. Phys., 20p-PB3-4  2019.9  The Japan Society of Applied Physics

Metal(CoSi₂)/ Insulator(CaF₂) tunneling hot electron resonant transistor

Yoshifumi Kohno, Takashi Suemasu, Wataru Saitoh, Masahiro Watanabe, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 19p-T-10  1994.9  The Japan Society of Applied Physics

Room temperature negative differential resistance of Si/CaF₂ triple-barrier resonant tunneling diodes with high peak current density

Hiroki Tonegawa, Yoshiro Kumagai, Kizashi Mikami, Koudai Hirose, Kanta Tomizawa, Takumi Kaneko, Honami Sato, Masahiro Watanabe

The 80th Autumn Meeting of The Jpn. Soc. Of Appl. Phys., 20p-PB3-3  2019.9  The Japan Society of Applied Physics

Epitaxial growth of CaF₂/CoSi₂/ CaF₂/ Si(111) by ICB technique

Masahiro Watanabe, Hitoshi Muguruma, Shigeki Muratake, Masahiro Asada, Shigehisa Arai

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 28a-T-11  1990.9  The Japan Society of Applied Physics

Electroluminescence from CaF₂/Si quantum-well heterostructures

Masato Mochizuki, Keita Suda, Masahiro Watanabe

The 76th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 13p-PA6-1  2015.9  The Japan Society of Applied Physics

Analysis of quantum-size-effect high-speed electron devices using metal-insulator hetero-structure

Tomoaki Sakaguchi, Masahiro Watanabe, Masahiro Asada

Nat. Conv. Rec. of IEICE of Japan, C-410  1990.10 

Room temperature negative differential resistance of CaF₂/Si/CaF₂ resonant-tunneling structures

Naoyuki Tanabe, Masato Mochizuki, Keita Suda, Tomofumi Shimanaka, Masahiro Watanabe

The 63rd The Japan Society of Applied Physics Spring Meeting, 20a-S223-7  2016.3  The Japan Society of Applied Physics

The energy band structure of metal (CoSi₂)- insulator (CaF₂) superlattice

Hitoshi Muguruma, Masahiro Watanabe, Masahiro Asada, Shigehisa Arai

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29p-M-3  1991.3  The Japan Society of Applied Physics

Room temperature resistance switching characteristics of Si/CaF₂ resonant-tunneling quantum-well structures grown on CoSi₂

Fumihiro Sakurai, Masahiro Watanabe

The 77th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 14p-P20-2  2016.9  The Japan Society of Applied Physics

Resistivity measurement of CoSi₂ epitaxial thin films on CaF₂/Si(111)

Masahiro Watanabe, Shigeki Muratake, Hiromasa Fujimoto, Shigenori Sakamori, Masahiro Asada, Shigehisa Arai

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29p-ZF-3  1991.3  The Japan Society of Applied Physics

Design and analysis of Si/CaF₂ quantum cascade lasers

Hiroki Kondo, Yusuke Saito, Naoyuki Tanabe, Masahiro Watanabe

The 64th The Japan Society of Applied Physics Spring Meeting, 14p-P8-8  2017.3  The Japan Society of Applied Physics

Epitaxial growth of CoSi₂ on CaF₂/Si(111) with electron beam evaporated Si

Takashi Suemasu, Masahiro Watanabe, Shigeki Muratake, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 9p-Z-12  1991.10  The Japan Society of Applied Physics

Design of active layers of Si/CaF₂ quantum cascade lasers considering material parameter modification of atomically thin films

Yusuke Saito, Naoyuki Tanabe, Hiroki Kondo, Masahiro Watanabe

The 64th The Japan Society of Applied Physics Spring Meeting, 16p-P7-36  2017.3  The Japan Society of Applied Physics

Epitaxial growth of Metal (CoSi₂)/ Insulator (CaF₂) superlattice structure

Masahiro Watanabe, Shigeki Muratake, Hiromasa Fujimoto, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 9p-Z-11  1991.10  The Japan Society of Applied Physics

Fabrication and evaluation of waveguide structure of Si/CaF₂ quantum cascade lasers

Hiroki Kondo, Yusuke Saito, Masahiro Watanabe

The 78th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 7p-PA2-11  2017.9  The Japan Society of Applied Physics

Fabrication of MIS (CoSi₂/CaF₂/Si) tunneling diodes

Shigeki Muratake, Masahiro Watanabe, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 12a-N-7  1991.10  The Japan Society of Applied Physics

Reactive ion etching of CaF₂/Si heterostructure using CF4/O2 plasma

Yoshiro Kumagai, Masahiro Watanabe

The 78th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 8p-PA2-3  2017.9  The Japan Society of Applied Physics

Negative Differencial Resistance in Metal (CoSi₂)/ Insulator (CaF₂) Resonant tunneling diode

Masahiro Watanabe, Takashi Suemasu, Shigeki Muratake, Masahiro Asada, Nobuhiro Suzuki

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 28a-T-5  1992.3  The Japan Society of Applied Physics

Room Temperature Negative Differential Resistance of Si/CaF₂ Triple-barrier Resonant Tunneling Diodes

Hiroki Tonegawa, Masahiro Watanabe

The 65th The Japan Society of Applied Physics Spring Meeting, 18a-P8-3  2018.3  The Japan Society of Applied Physics

RHEED ocsillations during CaF₂ epitaxy on Si(111)

Masahiro Watanabe, Nobuhiro Suzuki, Shigeki Muratake, Takashi Suemasu, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 29a-ZC-5  1992.3  The Japan Society of Applied Physics

Evaluation of valence band offset of atomically-thin CaF₂/Si heterointerface

Satoshi Fukuyama, Masahiro Watanabe

The 65th The Japan Society of Applied Physics Spring Meeting, 18p-P6-14  2018.3  The Japan Society of Applied Physics

Current amplification of Metal (CoSi₂)/ Insulator (CaF₂) hot electron transistor

Masahiro Watanabe, Shigeki Muratake, Takashi Suemasu, Masahiro Asada

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 16a-SZC-17  1992.9  The Japan Society of Applied Physics

Design and analysis of Si/CaF₂ near-infrared intersubband transition lasers

Soichiro Ono, Liu Long, Yusuke Saito, Hiroki Kondo, Masahiro Watanabe

The 65th The Japan Society of Applied Physics Spring Meeting, 19p-P9-1  2018.3  The Japan Society of Applied Physics

Room temperature negative differential resistance of Metal (CoSi₂)/ Insulator (CaF₂) resonant tunneling diode

Takashi Suemasu, Masahiro Watanabe, Masahiro Asada, Nobuhiro Suzuki

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 17a-ZB-7  1992.9  The Japan Society of Applied Physics

Room temperature electroluminescence from CaF₂ / Si quantum cascade structures

Yusuke Saito, Hiroki Kondo, Masahiro Watanabe

The 65th The Japan Society of Applied Physics Spring Meeting, 19p-P9-2  2018.3  The Japan Society of Applied Physics

Photovoltaic characteristics of p-i-n cell structures using CaF₂/Si quantum-dot superlattice

Susumu Koike, Masahiro Watanabe

The 74nd Autumn Meeting of The Jpn. Soc. of Appl. Phys, 19p-A2-13  2013.9  The Japan Society of Applied Physics

Negative differential resistance of nc-Si/CaF₂ resonant tunneling diode structures

Yuta Koshita, Keita Suda, Yuya Kuwata, Junya Denda, Susumu Koike, Minato Segawa, Masahiro Watanabe

The 74nd Autumn Meeting of The Jpn. Soc. of Appl. Phys, 19p-P9-2  2013.9  The Japan Society of Applied Physics

Pulsed operation of resistance switching memory of Si/CaF₂/CdF₂ resonant-tunneling quantum-well structures

Junya Denda, Keita Suda, Yuya Kuwata, Masahiro Watanabe

The 74nd Autumn Meeting of The Jpn. Soc. of Appl. Phys, 19p-P9-3  2013.9  The Japan Society of Applied Physics

Near-infrared Electro-Luminescence of CaF₂/Si Heterostructures

Shunsuke Kajiura, Yoshihito Ashikawa, Masahiro Watanabe

The 56th Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, 30p-ZB-2  2009.3  The Japan Society of Applied Physics

Optical properties of epitaxial CaF₂/Si quantum-dot structures

Hiroshi Oogi, Masahiro Watanabe

The 56th Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, 31p-TF-4  2009.3  The Japan Society of Applied Physics

Analysis of resistance switching devices using Si/CaF₂/CdF₂ quantum-well structures

Keita Suda, Junya Denda, Yuya Kuwata, Masahiro Watanabe

The 74nd Autumn Meeting of The Jpn. Soc. of Appl. Phys, 19p-P9-4  2013.9  The Japan Society of Applied Physics

High-peak-current-density resistance switching characteristics of Si/CaF₂ resonant-tunneling quantum-well structures

Yuta Koshita, Keita Suda, Yuya Kuwata, Junya Denda, Masahiro Watanabe

The 61st The Japan Society of Applied Physics Spring Meeting, 18p-PG2-3  2014.3  The Japan Society of Applied Physics

Tunneling current measurement of Al/CaF₂/Si MIS structures

Keita Suda, Junya Denda, Yuya Kuwata, Yuta Koshita, Masahiro Watanabe

The 61st The Japan Society of Applied Physics Spring Meeting, 18p-PG2-2  2014.3  The Japan Society of Applied Physics

Accelaration Voltage Dependence of Breakdown Field of ICB-grown CaF₂ Films

Masahiro Watanabe, Hitoshi Muguruma, Masahiro Asada, Shigehisa Arai

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys., 3p-L-1  1989.4  The Japan Society of Applied Physics

Pulsed operation of resistance switching devices using Si/CaF₂ resonant tunneling structures grown on Si(111)

Yuya Kuwata, Keita Suda, Junya Denda Yuta Koshita, Masahiro Watanabe

The 61st The Japan Society of Applied Physics Spring Meeting, 18p-PG2-1  2014.3  The Japan Society of Applied Physics

Possibility of Novel Device for LSI Using Nanometer Insulator Film

Masahiro Asada, Tomoaki Sakaguchi, Masahiro Watanabe

Nat. Conv. Rec. of IEICE of Japan, SC-6-4  1989.9 

Increase of electroluminescence from Si/CaF₂/CdF₂ intersubband transition laser structures using CdF₂ extraction layer

Masato Mochizuki, Hiroshi Kaneko, Keita Suda, Masahiro Watanabe

The 75th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 19a-A27-2  2014.9  The Japan Society of Applied Physics

Low Temperature Epitaxial Growth of CaF₂ Films by ICB Technique.

Masahiro Watanabe, Hitoshi Muguruma, Masahiro Asada, Shigehisa Arai

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys, 28a-H-5  1989.9  The Japan Society of Applied Physics

Analysis of Current Voltage Characteristics of Si/CaF₂/CdF₂ RTD

Keita Suda, Yuya Kuwata Masahiro Watanabe

The 75th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 19a-A27-1  2014.9  The Japan Society of Applied Physics

Analysis of grid barrier mode of space charge limited metal/insulator electric devices

Tomoaki Sakaguchi, Masahiro Watanabe, Masahiro Asada

Nat. Conv. Rec. of IEICE of Japan, C-546  1990.3 

Pulsed response of resistance switching devices using Si/CaF₂ resonant-tunneling structures

Yuya Kuwata, Keita Suda, Masahiro Watanabe

The 62nd The Japan Society of Applied Physics Spring Meeting, 12p-P13-2  2015.3  The Japan Society of Applied Physics

Epitaxial growth of CoSi₂ on CaF₂(111) thin film by ICB technique

Masahiro Watanabe, Hitoshi Muguruma, Shigeki Muratake, Masahiro Asada, Shigehisa Arai

Nat. Conv. Rec. of The Japan Soc. of Appl. Phys, 29a-PC-18  1990.3  The Japan Society of Applied Physics

Analysis of resistance switching characteristics of resonant-tunneling quantum-well structures using CaF₂/CdF₂/CaF₂ heterostructure

Keita Suda, Yuya Kuwata, Masahiro Watanabe

The 62nd The Japan Society of Applied Physics Spring Meeting, 12p-A24-6  2015.3  The Japan Society of Applied Physics

Fabrication and characterization of resistance switching devices using fluoride based resonant tunneling structures grown on CoSi₂/Si(111)

Yukou Nakashouji, Kazuya Uryu, Masahiro Watanabe

The 58th Spring Meeting, The Japan Society of Applied Physics and Related Societies, 26a-KV-6  2011.3  The Japan Society of Applied Physics

Retention characteristics of resistance switching devices using CaF₂/CdF₂/Si quantum-well structures grown on Si(111)

Kazuya Uryu, Junya Denda, Masahiro Watanabe

The 72nd Autumn Meeting of The Jpn. Soc. of Appl. Phys, 31p-P16-14  2011.8  The Japan Society of Applied Physics

Fabrication of p-i-n cell structures using CaF₂/Si quantum-dot superlattice

Chihiro Koseki, Hiroshi Oogi, Masahiro Watanabe

The 72nd Autumn Meeting of The Jpn. Soc. of Appl. Phys, 31a-ZH-5  2011.8  The Japan Society of Applied Physics

Fabrication of crosspoint resistance switching devices using CaF₂/CdF₂/Si quantum-well structures grown on CoSi₂/Si(100)

Kazuya Uryu, Junya Denda, Masahiro Watanabe

The 59th Spring Meeting, The Japan Society of Applied Physics and Related Societies, 18a-E1-7  2012.3  The Japan Society of Applied Physics

Resistance switching characteristics of Si/CaF₂/CdF₂ resonant-tunneling quantum-well structures grown on CoSi₂

Junya Denda, Kazuya Uryu, Masahiro Watanabe

The 73nd Autumn Meeting of The Jpn. Soc. of Appl. Phys, 12p-PA1-13  2012.9  The Japan Society of Applied Physics

Spectral sensitivity of ημτ product for CaF₂/Si quantum-dot structures

Yuuki Kurachi, Masahiro Watanabe

The 73nd Autumn Meeting of The Jpn. Soc. of Appl. Phys, 12a-F7-6  2012.9  The Japan Society of Applied Physics

Room temperature near-infrared electroluminescence from Si/CaF₂ quantum cascade laser structures

Tatsuya Ochi, Masahiro Watanabe

The 73nd Autumn Meeting of The Jpn. Soc. of Appl. Phys, 12p-PA1-12  2012.9  The Japan Society of Applied Physics

Room temperature near-infrared (λ～1.5μm) electroluminescence from Si/CaF₂ quantum cascade laser structures

Minato Segawa, Tatsuya Ochi, Yuta Koshita, Masahiro Watanabe

The 60th The Japan Society of Applied Physics Spring Meeting, 28p-G5-15  2013.3  The Japan Society of Applied Physics

Resistance switching characteristics of Si/CaF₂/CdF₂ resonant-tunneling quantum-well structures

Junya Denda, Kazuya Uryu, Keita Suda, Masahiro Watanabe

The 60th The Japan Society of Applied Physics Spring Meeting, 29a-PB6-9  2013.3  The Japan Society of Applied Physics

Retention characteristics of crosspoint resistance switching devices using CaF₂/CdF₂/Si quantum-well structures grown on CoSi₂/Si(100)

Kazuya Uryu, Junya Denda, Keita Suda, Yuya Kuwata, Masahiro Watanabe

The 60th The Japan Society of Applied Physics Spring Meeting, 29a-PB6-8  2013.3  The Japan Society of Applied Physics

Fabrication of resistance switching devices using Si/CaF₂ resonant tunneling structures grown on Si(111)

Yuya Kuwata, Kazuya Uryu, Junya Denda, Keita Suda, Masahiro Watanabe

The 60th The Japan Society of Applied Physics Spring Meeting, 29a-PB6-7  2013.3  The Japan Society of Applied Physics

Room temperature negative differential resistance of CoSi₂/CaF₂ triple-barrier resonant tunneling diode grown by Nano-area Local Epitaxy

Shimpei Tamura, Masahiro Watanabe Masahiro Asada

The 51st Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, 30a-ZE-8  2004.3  The Japan Society of Applied Physics

Growth temperature dependence of CdF₂/CaF₂ resonant tunneling diode structures on Si(100) substrate

Tohru Kanazawa, Masahiro Watanabe, Masahiro Asada

The 65th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 2a-ZK-4  2004.9  The Japan Society of Applied Physics

Near infrared EL measurement of CdF₂/CaF₂ quantum heterostructures on Si substrate

Keisuke Jinen, Hiroshi Murata, Masahiro Watanabe, Masahiro Asada

The 65th Autumn Meeting of The Jpn. Soc. of Appl. Phys., 4a-ZK-6  2004.9  The Japan Society of Applied Physics

Optically pumped ultraviolet lasing of BeMgZnSe compounds

Yuuki Niiyama, Takayuki Murata, Masahiro Watanabe

The 52nd Spring Meeting of The Jpn. Soc. of Appl. Phys. And Related Societies, 31p-ZN-7  2005.3  The Japan Society of Applied Physics

Theoretical analysis of fluoride based intersubband transition lasers with plasmon waveguide

Takeshi Kikuchi, Keisuke Jinen, Kaoru Uchida, Shinji Kodaira, Masahiro Watanabe, Masahiro Asada

The 66th Autumn Meeting of The Jpn. Soc. of Appl. Phys, 9a-W-8  2005.9  The Japan Society of Applied Physics