Updated on 2026/05/14

写真a

 
SHIOTSU YUSAKU
 
Organization
Institute of Integrated Research Laboratory for Future Interdisciplinary Research of Science and Technology Researcher
Title
Researcher
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Education

  • Tokyo Institute of Technology

    2020.4 - 2023.3

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    Country: Japan

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  • Tokyo Institute of Technology

    2018.3 - 2020.3

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    Country: Japan

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  • Tokyo Institute of Technology

    2016.4 - 2018.3

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    Country: Japan

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  • Tokyo National College of Technology

    2011.4 - 2016.3

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    Country: Japan

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Research History

  • Institute of Science Tokyo   Researcher

    2024.10

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    Country:Japan

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  • Tokyo Institute of Technology   Researcher

    2023.4 - 2024.9

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    Country:Japan

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  • Japan Society for the Promotion of Science

    2021.4 - 2023.3

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Papers

  • Binarized Neural-Network Parallel-Processing Accelerator Macro Designed for an Energy Efficiency Higher Than 100 TOPS/W Reviewed

    Yusaku Shiotsu, Satoshi Sugahara

    IEEE Journal on Exploratory Solid-State Computational Devices and Circuits   11   25 - 33   2025.2

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:Institute of Electrical and Electronics Engineers (IEEE)  

    DOI: 10.1109/jxcdc.2025.3538702

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  • Binarized Neural Network Accelerator Macro Using Ultralow-Voltage Retention SRAM for Energy Minimum-Point Operation Reviewed

    Yusaku Shiotsu, Satoshi Sugahara

    IEEE Journal on Exploratory Solid-State Computational Devices and Circuits   8 ( 2 )   134 - 144   2022.12

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:Institute of Electrical and Electronics Engineers (IEEE)  

    DOI: 10.1109/jxcdc.2022.3225744

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  • A New Ultralow-Voltage Retention SRAM Cell Enhancing Noise Immunity Reviewed

    Katsutoshi Ito, Yusaku Shiotsu, Satoshi Sugahara

    IEEE Open Journal of Circuits and Systems   6   370 - 382   2025

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:Institute of Electrical and Electronics Engineers (IEEE)  

    DOI: 10.1109/ojcas.2025.3594022

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  • Spin Injection Behavior of CoFe/MgO/Si Tunnel Contacts: Effects of Radical Oxygen Annealing Reviewed

    Taiju Akushichi, Yota Takamura, Yusaku Shiotsu, Shuu’ichirou Yamamoto, Satoshi Sugahara

    Journal of Electronic Materials   52 ( 10 )   6902 - 6910   2023.8

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:Springer Science and Business Media LLC  

    DOI: 10.1007/s11664-023-10606-4

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    Other Link: https://link.springer.com/article/10.1007/s11664-023-10606-4/fulltext.html

  • Ultralow-Voltage Retention SRAM With a Power Gating Cell Architecture Using Header and Footer Power-Switches Reviewed

    Hayato Yoshida, Yusaku Shiotsu, Daiki Kitagata, Shuu'ichirou Yamamoto, Satoshi Sugahara

    IEEE Open Journal of Circuits and Systems   2   520 - 533   2021

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    Authorship:Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:Institute of Electrical and Electronics Engineers ({IEEE})  

    DOI: 10.1109/OJCAS.2021.3104945

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  • Modeling and Design of Thin-Film π-Type Micro Thermoelectric Generator Using Vacuum/Insulator-Hybrid Isolation for Self-Powered Wearable Devices Reviewed

    Yusaku Shiotsu, Toshimasa Seino, Tsuyoshi Kondo, Satoshi Sugahara

    IEEE Transactions on Electron Devices   67 ( 9 )   3834 - 3842   2020.9

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:Institute of Electrical and Electronics Engineers ({IEEE})  

    DOI: 10.1109/TED.2020.3006168

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  • Modeling and Design of a New Piezoelectronic Transistor for Ultralow-Voltage High-Speed Integrated Circuits Reviewed

    Yusaku Shiotsu, Shuu'ichirou Yamamoto, Yusuke Shuto, Hiroshi Funakubo, Minoru Kuribayashi Kurosawa, Satoshi Sugahara

    IEEE Transactions on Electron Devices   67 ( 9 )   3852 - 3860   2020.9

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:Institute of Electrical and Electronics Engineers ({IEEE})  

    DOI: 10.1109/TED.2020.3008891

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  • Thin-Film π-Type Micro TEG Using Vacuum/Insulator-Hybrid Isolation with Convex-Shape Hot-Plate Module Structure for Wearable Device Applications Reviewed

    Y Shiotsu, T Seino, N Chiwaki, S Sugahara

    Journal of Physics: Conference Series   1407 ( 1 )   012099-1 - 012099-4   2019.11

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    Authorship:Lead author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP Publishing  

    Abstract

    Design optimization and performance of a micro thermoelectric generator (μTEG) using human body heat are investigated. A newly introduced thin-film π-type μTEG module structure using vacuum/insulator-hybrid thermal isolation with the convex-shape hot plate is useful to achieve a high thermal resistance of the module and also to suppress the unwanted heat flow passing through the supportive wall structure for the vacuum isolation. The optimum design of this μTEG module can exhibit sufficiently high output power suitable for a power source of self-powered wearable devices.

    DOI: 10.1088/1742-6596/1407/1/012099

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    Other Link: https://iopscience.iop.org/article/10.1088/1742-6596/1407/1/012099

  • Enhancement of magnetic circular dichroism in bi-layered ZnO-Bi:YIG thin films Reviewed

    Shinichiro Mito, Yusaku Shiotsu, Junji Sasano, Hiroyuki Takagi, Mitsuteru Inoue

    AIP Advances   7 ( 5 )   056316-1 - 056316-4   2017.2

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:AIP Publishing  

    Bi-layered zinc oxide (ZnO) and bismuth substituted yttrium iron garnet (Bi:YIG) was fabricated and magneto-optically investigated. Enhancement of Faraday rotation and magnetic circular dichroism (MCD) was observed. The wavelength of MCD enhancement was in good agreement with exciton wavelength of ZnO. This enhancement was only observed in the bi-layer, and implies that the exciton generated in ZnO interacted with Bi:YIG. Because the exciton wavelength of ZnO can be controlled by electro-optic effect, this result has the potential for realizing voltage control of magneto-optic effect.

    DOI: 10.1063/1.4976952

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Presentations

  • An energy-efficient parallel-processing in-memory BNN accelerator macro using XNOR-SRAM

    近藤慶音, 塩津勇作, 菅原聡

    The 73rd JSAP Spring Meeting 2026  2026.3 

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    Event date: 2026.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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  • Design of parallel-processing in-memory neural-network accelerator macro for INT4 inference

    塩津勇作, 菅原聡

    The 73rd JSAP Spring Meeting 2026  2026.3 

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    Event date: 2026.3

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Design of parallel-READ single-ended SRAM macros for near energy-minimum-point operation

    矢口忠勝, 塩津勇作, 菅原聡

    The 73rd JSAP Spring Meeting 2026  2026.3 

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    Event date: 2026.3

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Design and performance of single-ended SRAM cell for near energyminimum-point operation International conference

    T. Yaguchi, Y. Shiotsu, S. Sugahara

    IEEE International Meeting for Future of Electron Devices, Kansai  2025.11  IEEE EDS Kansai Chapter

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    Event date: 2025.11

    Language:English   Presentation type:Poster presentation  

    Venue:Kyoto   Country:Japan  

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  • Design methodology for a radiation-hardened SRAM cell

    野見山敏輝, 塩津勇作, 菅原聡

    The 86th JSAP Autumn Meeting 2025  2025.9 

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    Event date: 2025.9

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • A high-noise-immunity SRAM cell for energy-minimum-point-operation PIMs

    伊藤克俊, 藤原拓真, 塩津勇作, 菅原聡

    The 86th JSAP Autumn Meeting 2025  2025.9 

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    Event date: 2025.9

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Design of asymmetric SRAM cell for energy-minimum-point operation

    藤下涼, 塩津勇作, 菅原聡

    The 86th JSAP Autumn Meeting 2025  2025.9 

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    Event date: 2025.9

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Design and performance of single-ended SRAM cells for near energy-minimum-point operation

    矢口忠勝, 塩津勇作, 菅原聡

    The 86th JSAP Autumn Meeting 2025  2025.9 

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    Event date: 2025.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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  • A parallel-processing-in-memory BNN accelerator macro using XNOR-SRAM

    近藤慶音, 塩津勇作, 菅原聡

    The 86th JSAP Autumn Meeting 2025  2025.9 

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    Event date: 2025.9

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Energy-minimum point for PIM-type neural-network accelerator macros having parallelized MAC units

    Yusaku Shiotsu, Satoshi Sugahara

    The 72nd JSAP Spring Meeting 2025  2025.3 

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    Event date: 2025.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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  • Comparative Study of Gain Cells for Pseudo-SRAM International conference

    S. Yoshida, Y. Shiotsu, S. Sugahara

    IEEE International Meeting for Future of Electron Devices, Kansai  2024.11  IEEE EDS Kansai Chapter

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    Event date: 2024.11

    Language:English   Presentation type:Poster presentation  

    Venue:Kyoto   Country:Japan  

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  • Design of Highly-Stable Energy-Minimum-Point SRAM Using Ultralow-Voltage Retention Cell International conference

    K. Ito, Y. Shiotsu, S. Sugahara

    IEEE International Meeting for Future of Electron Devices, Kansai  2024.11  IEEE EDS Kansai Chapter

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    Event date: 2024.11

    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto   Country:Japan  

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  • Design and performance of a 10T-SRAM cell using isolated read ports for low voltage operation

    Tadakatsu Yaguchi, Yusaku Shiotsu, Satoshi Sugahara

    The 85th JSAP Autumn Meeting 2024  2024.9 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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  • A processing-in-memory SRAM cell with XNOR function for energy minimum-point operation

    近藤慶音, 塩津勇作, 菅原聡

    The 85th JSAP Autumn Meeting 2024  2024.9 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Comparative study of gain cells for pseudo-SRAM

    吉田誠, 塩津勇作, 菅原聡

    The 85th JSAP Autumn Meeting 2024  2024.9 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Design of a ULVR-SRAM cell for highly stable energy minimum-point operation

    伊藤克俊, 塩津勇作, 菅原聡

    The 85th JSAP Autumn Meeting 2024  2024.9 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Power-gating architecture and performance of nonvolatile SRAM

    加藤豪人, 大木治弥, 塩津勇作, 山本修一郎, 菅原聡

    The 85th JSAP Autumn Meeting 2024  2024.9 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Design of an INT4-inference neural-network accelerator macro for energy minimum point operation

    塩津勇作, 菅原聡

    The 85th JSAP Autumn Meeting 2024  2024.9 

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    Event date: 2024.9

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Variation tolerance analysis of ultralow-voltage SRAM cells configured with piezoelectronic transistors

    塩津勇作, 菅原聡

    The 71st JSAP Spring Meeting 2024  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Power-gating performance of nonvolatile SRAM using FinFETs for low-voltage operation

    塩津勇作, 山崎修, 菅原聡

    The 71st JSAP Spring Meeting 2024  2024.3 

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    Event date: 2024.3

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  • Design and analysis of an 8kB macro for a new ultralow-voltage retention SRAM

    Katsutoshi Ito, Yusaku Shiotsu, Satoshi Sugahara

    The 84th JSAP Autumn Meeting 2023  2023.9 

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    Event date: 2023.9

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  • A binarized neural network accelerator macro with parallelized MAC units using ULVR-SRAM

    塩津勇作, 菅原聡

    The 84th JSAP Autumn Meeting 2023  2023.9 

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    Event date: 2023.9

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  • Power-gating performance of ultralow-voltage-retention SRAM for near-threshold-voltage operation

    Taketo Kato, Yusaku Shiotsu, Syuu'ichirou Yamamoto, Satoshi Sugahara

    The 83rd JSAP Autumn meeting 2022  2022.9 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Design of nonvolatile SRAM using FinFETs for low-voltage operation

    Osamu Yamazaki, Yusaku Shiotsu, Shuu'ichirou Yamamoto, Satoshi Sugahara

    The 83rd JSAP Autumn meeting 2022  2022.9 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Proposal of a new ultralow-voltage-retention SRAM (ULVR-SRAM) cell

    Katsutoshi Ito, Yusaku Shiotsu, Shuu'ichirou Yamamoto, Satoshi Sugahara

    The 83rd JSAP Autumn meeting 2022  2022.9 

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    Event date: 2022.9

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • 超低電圧リテンションSRAMのエネルギー最小点動作とそのBNNアクセラレータへの応用 Invited

    塩津勇作, 原拓実, 菅原聡

    電子情報通信学会集積回路研究会 メモリ技術と集積回路技術一般  2022.4  電子情報通信学会

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    Event date: 2022.4

    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

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  • Power-gating performance and architecture of ultralow-voltage-retention SRAM

    Hiroki Yano, Yusaku Shiotsu, Shuu'ichirou Yamamoto, Satoshi Sugahara

    The 69th JSAP Spring Meeting 2022  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Modeling of transverse-type thin-film micro-TEG modules using various interlayer insulators

    Kaito Sanuki, Hiroyuki Endou, Yusaku Shiotsu, Satoshi Sugahara

    The 69th JSAP Spring Meeting 2022  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Performance of a binarized neural network accelerator using ULVR-SRAM

    Yusaku Shiotsu, Satoshi Sugahara

    The 69th JSAP Spring Meeting 2022  2022.3 

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    Event date: 2022.3

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Design and analysis of ULVR-SRAM using automatic body-bias control

    斎藤修平, 塩津勇作, 原拓実, 山本修一郎, 菅原聡

    The 82nd JSAP Autumn Meeting 2021  2021.9 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Design and analysis of an 8kB ULVR-SRAM macro for near-threshold voltage operations

    原拓実, 塩津勇作, 山本修一郎, 菅原聡

    The 82nd JSAP Autumn Meeting 2021  2021.9 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Simplified lumped-constant-circuit model of transverse-type thin-film micro-TEG modules

    Hiroyuki Endou, Yusaku Shiotsu, Satoshi Sugahara

    The 82nd JSAP Autumn Meeting 2021  2021.9 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Proposal and performance prediction of a BNN accelerator using ULVR-SRAM

    Yusaku Shiotsu, Shuu'ichirou Yamamoto, Satoshi Sugahara

    The 82nd JSAP Autumn Meeting 2021  2021.9 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Design and analysis of ultralow-voltage-retention Flip-Flop configured with bulk devices

    Tsubasa Matsuzaki, Yusaku Shiotsu, Shuu'ichirou Yamamoto, Satoshi Sugahara

    The 82nd JSAP Autumn Meeting 2021  2021.9 

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    Event date: 2021.9

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • ボディバイアス効果を用いたULVR-SRAMセルの設計とそのパワーゲーティング性能

    塩津 勇作, 吉田 隼, 山本 修一郎, 菅原 聡

    LSIとシステムのワークショップ2021  2021.5  電子情報通信学会

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    Event date: 2021.5

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン   Country:Japan  

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  • ニアスレッショルド電圧動作超低電圧リテンションSRAMの設計と性能解析

    原拓実, 塩津勇作, 山本修一郎, 菅原聡

    LSIとシステムのワークショップ2021  2021.5  電子情報通信学会

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    Event date: 2021.5

    Language:Japanese   Presentation type:Poster presentation  

    Venue:オンライン   Country:Japan  

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  • Power-gating performance of caches using ultralow-voltage-retention SRAM

    Hayato Yoshida, Yusaku Shiotsu, Shuu'ichiro Yamamoto, Satoshi Sugahara

    The 68th JSAP Spring Meeting 2021  2021.3 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • High-accuracy modeling of transverse-type thin-film micro-TEG modules

    Hiroyuki Endou, Yusaku Shiotsu, Hayato Kumagai, Satoshi Sugahara

    The 68th JSAP Spring Meeting 2021  2021.3 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Modeling of transverse-type Si-nanowire micro-TEG modules

    Hayato Kumagai, Yusaku Shiotsu, Hiroyuki Endou, Satoshi Sugahara

    The 68th JSAP Spring Meeting 2021  2021.3 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Energy-efficient operation at energy minimum point for ultralow-voltage-retention SRAM

    Yusaku Shiotsu, Shuu'ichirou Yamamoto, Satoshi Sugahara

    The 68th JSAP Spring Meeting 2021  2021.3 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Design of ULVR-SRAM cell for near-threshold voltage operation

    Takumi Hara, Hayato Yoshida, Yusaku Shiotsu, Shuu'ichirou Yamamoto, Satoshi Sugahara

    The 68th JSAP Spring Meeting 2021  2021.3 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • Energy-efficient operation at energy minimum point for ultra-low-voltage-retention FF

    Kenichiro Takiguchi, Yusaku Shiotsu, Tsubasa Matsuzaki, Shuu'ichirou Yamamoto, Satoshi Sugahara

    The 68th JSAP Spring Meeting 2021  2021.3 

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    Event date: 2021.3

    Language:Japanese   Presentation type:Oral presentation (general)  

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  • MODELING AND DESIGN OF TRANSVERSE-TYPE MICRO THERMOELECTRIC GENERATOR USING SILICON NANOWIRES International conference

    T. Kumagai, Y. Shiotsu, S. Sugahara

    IEEE International Conference on Micro Electro Mechanical Systems  2021.1  IEEE

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    Event date: 2021.1

    Language:English   Presentation type:Poster presentation  

    Venue:Online  

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  • Design and analysis of a new ultralow-voltage-retention SRAM cell

    Daiki Kitagata, Hayato Yoshida, Yusaku Shiotsu, Shuu'ichirou Yamamoto, Satoshi Sugahara

    The 81st JSAP Autumn Meeting 2020  2020.9 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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  • Design methodology of transverse-type micro-TEG modules using Si-nanowires for high output power

    Hayato Kumagai, Yusaku Shiotsu, Hiroyuki Endou, Satoshi Sugahara

    The 81st JSAP Autumn Meeting 2020  2020.9 

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    Event date: 2020.9

    Presentation type:Oral presentation (general)  

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  • Design and analysis of 8kB SRAM macro using a new ultralow-voltage-retention architecture

    Yusaku Shiotsu, Daiki Kitagata, Shuu'ichirou Yamamoto, Satoshi Sugahara

    The 81st JSAP Autumn Meeting 2020  2020.9 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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  • Fully optimized design and performance of transverse-type micro-TEG modules using Si-nanowires

    Hayato Kumagai, Yusaku Shiotsu, Hiroyuki Endou, Satoshi Sugahara

    The 81st JSAP Autumn Meeting 2020  2020.9 

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    Event date: 2020.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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  • Design optimization of thin-film transverse-type micro-TEG modules using Heusler alloy

    Yusaku Shiotsu, Hiroyuki Endou, Hayato Kumagai, Satoshi Sugahara

    The 67th JSAP Spring Meeting 2020  2020.3 

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    Event date: 2020.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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  • Design and performance of Flip-Flops configured with piezoelectronic transistors

    Yusaku Shiotsu, Shuu'ichirou Yamamoto, Hiroshi Funakubo, Minoru Kuribayashi Kurosawa, Satoshi Sugahara

    The 80th JSAP Autumn Meeting 2019  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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  • Optimized design of transverse-type micro-TEG modules using silicon nanowires

    Hayato Kumagai, Yusaku Shiotsu, Hiroyuki Endou, Satoshi Sugahara

    The 80th JSAP Autumn Meeting 2019  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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  • Design optimization of transverse-type thin-film μTEG modules: Effects of interlayer materials

    Hiroyuki Endou, Hayato Kumagai, Yusaku Shiotsu, Satoshi Sugahara

    The 80th JSAP Autumn Meeting 2019  2019.9 

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    Event date: 2019.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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  • Low-leakage design of a new piezoelectronic transistor and its SRAM application

    Yusaku Shiotsu, Shuu'ichiro Yamamoto, Hiroshi Funakubo, Minoru Kuribayashi Kurosawa, Satoshi Sugahara

    The 66th JSAP Spring Meeting 2019  2019.3 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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  • Design optimization of π-type thin-film micro-TEG modules: Effects of thickness of the thermoelectric material

    Hayato Kumagai, Yusaku Shiotsu, Takashi Okubo, Satoshi Suguhara

    The 66th JSAP Spring Meeting 2019  2019.3 

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    Event date: 2019.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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  • Design and Performance of Silicon Nanowire Micro Thermoelectric Generators International conference

    Y. Shiotsu, T. Okubo, H. Kumagai, S. Sugahara

    Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon  2019.3 

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    Event date: 2019.3

    Language:English   Presentation type:Poster presentation  

    Venue:Grenoble   Country:France  

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  • Design of New Piezoelectronic Transistors and Their Ultralow-Voltage SRAM Application International conference

    Y. Shiotsu, S. Yamamoto, H. Funakubo, M. K. Kurosawa, S. Sugahara

    Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon  2019.3 

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    Event date: 2019.3

    Language:English   Presentation type:Poster presentation  

    Venue:Grenoble   Country:France  

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  • Thin-Film π-Type Micro TEG Using Vacuum/Insulator-Hybrid Isolation with Convex-Shape Hot-Plate Module Structure for Wearable Device Applications International conference

    Y. Shiotsu, T. Seino, N. Chiwaki, S. Sugahara

    Micro and Nanotechnology for Power Generation and Energy Conversion Applications  2018.12 

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    Event date: 2018.12

    Language:English   Presentation type:Poster presentation  

    Venue:Daytona Beach   Country:United States  

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  • Design methodology of a new piezoelectronic transistor

    Yusaku Shiotsu, Shuu'ichiro Yamamoto, Hiroshi Funakubo, Minoru Kuribayashi Kurosawa, Satoshi Sugahara

    The 79th JSAP Autumn Meeting 2018  2018.9 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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  • Design optimization of π-type thin-film micro-TEG modules using various interlayer insulators

    Hayato Kumagai, Yusaku Shiotsu, Takashi Okubo, Satoshi Sugahara

    The 79th JSAP Autumn Meeting 2018  2018.9 

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    Event date: 2018.9

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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  • Design and Circuit Performance of a New Piezoelectronic Transistor International conference

    Y. Shiotsu, S. Yamamoto, H. Funakubo, M. K. Kurosawa, S. Sugahara

    IEEE Silicon Nanoelectronics Workshop  2018.6  IEEE

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    Event date: 2018.6

    Language:English   Presentation type:Poster presentation  

    Venue:Honolulu   Country:United States  

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  • Design of a new piezoelectronic transistor and its device and circuit performances

    Yusaku Shiotsu, Shuu'ichiro Yamamoto, Yusuke Shuto, Hiroshi Hunakubo, Minoru Kurosawa, Satoshi Sugahara

    The 65th JSAP Spring Meeting 2018  2018.3 

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    Event date: 2018.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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  • Magnetic Circular Dichroism in Bi-layered ZnO-Bi:YIG Thin Films

    菊地颯希, 水戸慎一郎, 塩津勇作, 笹野順司

    2016.11 

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    Event date: 2016.11

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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  • Enhancement of Magnetic Circular Dichroism in Bi-layered ZnO-Bi:YIG Thin Films International conference

    S. Mito, Y. Shiotsu, J. Sasano, H. Takagi, M. Inoue

    61st Annual Conference on Magnetism and Magnetic Materials  2016.11 

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    Event date: 2016.10 - 2016.11

    Language:English   Presentation type:Poster presentation  

    Venue:New Orleans   Country:United States  

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  • Magneto-optical response of ZnO nanocrystals on magnetic garnet thin films

    Yusaku Shiotsu, Shinichiro Mito, Junji Sasano

    The 63rd JSAP Spring Meeting 2016  2016.3 

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    Event date: 2016.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Country:Japan  

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  • 不揮発性SRAM:エッジコンピューティングの革新的低消費電力技術 Invited

    塩津勇作, 山本修一郎, 菅原聡

    日本学術振興会 先進薄膜界面機能創成委員会 第6回研究会  2021.10  日本学術振興会

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    Language:Japanese   Presentation type:Oral presentation (invited, special)  

    Venue:オンライン   Country:Japan  

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▼display all

Industrial property rights

  • 処理装置

    菅原 聡, 塩津 勇作

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    Applicant:国立研究開発法人科学技術振興機構

    Application no:特願2024-008592  Date applied:2021.1

    Announcement no:特開2024-111064  Date announced:2024.8

    Patent/Registration no:特許第7735620号  Date registered:2025.9 

    J-GLOBAL

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  • 記憶回路

    菅原 聡, 塩津 勇作

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    Applicant:国立研究開発法人科学技術振興機構

    Application no:特願2022-500317  Date applied:2021.1

    Announcement no:特開2024-032850  Date announced:2024.3

    Patent/Registration no:特許第7639247号  Date registered:2025.2  Date issued:2025.3

    Rights holder:国立研究開発法人科学技術振興機構

    J-GLOBAL

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  • 双安定回路および電子回路

    菅原 聡, 塩津 勇作

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    Applicant:国立研究開発法人科学技術振興機構

    Application no:JP2021003224  Date applied:2021.1

    Patent/Registration no:特許第7430425号  Date registered:2024.2  Date issued:2024.2

    Rights holder:国立研究開発法人科学技術振興機構

    J-GLOBAL

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Research Projects

  • 新型ゲインセルを用いた擬似SRAMの研究開発

    Grant number:26K14753  2026.4 - 2029.3

    日本学術振興会  科学研究費助成事業  基盤研究(C)

    塩津 勇作

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    Grant amount:\4550000 ( Direct Cost: \3500000 、 Indirect Cost:\1050000 )

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  • CMOSロジックの低消費電力技術に関する研究

    Grant number:21J10430  2021.4 - 2023.3

    日本学術振興会  科学研究費助成事業  特別研究員奨励費

    塩津 勇作

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    Grant amount:\1500000 ( Direct Cost: \1500000 )

    本年度は前年度設計した3M-SRAMを用いたProcessing-in-memory(PIM)型ニューラルネットワーク(NN)アクセラレータマクロの設計およびその性能評価・検証を中心に研究を進めた.NNのアーキテクチャには2値化NN(BNN)を用いた.開発したPIM型BNNアクセラレータ(BNA)マクロは重みデータとバイアスデータを3M-SRAMマクロに格納する.メモリ部に3M-SRAMを用いることで,通常のSRAMでは実現できないエネルギー最小点(EMP)での動作が可能となり,さらに0.2V程度の超低電圧(ULV)でデータ保持を行うULVリテンションを用いたパワーゲーティング(PG)も導入できる.また,このBNAマクロを用いれば,任意のサイズ・形状のネットワークを複数マクロで構成できる.
    BNAマクロの性能を寄生抵抗・容量を考慮した高速SPICEによる大規模シミュレーションにより評価を行った.開発したBNAマクロは0.2VのULVリテンションを用いた実質的なPGによって,待機時電力を84%削減できることを示した.さらに,0.4VのEMP動作により動作時電力を通常電圧動作(1.2V)と比べて1/100にまで削減できることを示した.3M-SRAMのEMP動作に基づく推論によって,エネルギー効率(TOPS/W)は最大化し,許容される積和演算の並列数も大幅に増大されることから,演算能力(TOPS)も飛躍的に向上できることを示した.例えば,通常電圧動作時に比べて,演算性能(TOPS)が同じであれば,1/10程度の消費電力で済み,消費電力が同じであれば,10倍程度の演算性能を実現できる.全結合層を用いたベンチマークから,このBNAマクロを用いれば,並列数に応じて0.5-4TOPSの高い演算能力を61-65TOPS/Wの高いエネルギー効率で実現できることを明らかにした.

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