Highly stabilized hydrogenated amorphous silicon solar cells fabricated by triode-plasma CVD

H Sonobe, A Sato, S Shimizu, T Matsui, M Kondo, A Matsuda

THIN SOLID FILMS   502 ( 1-2 )   306 - 310   2006年4月

Roles of microcrystalline silicon p layer as seed, window, and doping layers for microcrystalline silicon p-i-n solar cells

T Fujibayashi, M Kondo

JOURNAL OF APPLIED PHYSICS   99 ( 4 )   043703-1-043703-4   2006年2月

In situ Auger electron spectroscopy studies of the growth of p-type microcrystalline silicon films on ZnO-coated glass substrates for microcrystalline silicon p-i-n solar cells

T Fujibayashi, M Kondo

APPLIED PHYSICS LETTERS   87 ( 22 )   221908-1-221908-3   2005年11月

Effects of carrier concentration on the dielectric function of ZnO : Ga and In2O3 : Sn studied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption

H Fujiwara, M Kondo

PHYSICAL REVIEW B   71 ( 7 )   075109-1-075109-10   2005年2月

Real-time monitoring and process control in amorphous/crystalline silicon heterojunction solar cells by spectroscopic ellipsometry and infrared spectroscopy

H Fujiwara, M Kondo

APPLIED PHYSICS LETTERS   86 ( 3 )   032112-1-032112-3   2005年1月

Effects of carrier concentration on the dielectric function of ZnO:Ga and In2O3:Sn studied by spectroscopic ellipsometry: Analysis of free carrier and band edge absorption

PHYSICAL REVIEW B   71 ( 7 )   0751109-1-075109-10   2005年

High-performance diamond/amorphous silicon p-n(+) heterojunctions

YG Chen, M Ogura, M Kondo, H Okushi

APPLIED PHYSICS LETTERS   85 ( 11 )   2110 - 2112   2004年9月

Doping properties of boron-doped microcrystalline silicon from B2H6 and BF3: material properties and solar cell performance

T Matsui, M Kondo, A Matsuda

JOURNAL OF NON-CRYSTALLINE SOLIDS   338   646 - 650   2004年6月

High-rate growth of microcrystalline silicon films using a high-density SiH4/H-2 glow-discharge plasma

C Niikura, N Itagaki, M Kondo, Y Kawai, A Matsuda

THIN SOLID FILMS   457 ( 1 )   84 - 89   2004年6月

Preparation of microcrystalline silicon films at ultra high-rate of 10 nm/s using high-density plasma

C Niikura, M Kondo, A Matsuda

JOURNAL OF NON-CRYSTALLINE SOLIDS   338   42 - 46   2004年6月

Nucleation mechanism of microcrystalline silicon from the amorphous phase

H Fujiwara, M Kondo, A Matsuda

JOURNAL OF NON-CRYSTALLINE SOLIDS   338   97 - 101   2004年6月

Real-time studies of amorphous and microcrystalline Si : H growth by spectroscopic ellipsometry and infrared spectroscopy

H Fujiwara, M Kondo, A Matsuda

THIN SOLID FILMS   455   670 - 674   2004年5月

微結晶Si太陽電池の高速形成

第３１回アモルファス物質の物性と応用セミナー   93-100   2004年

a-Si:H/c-Siヘテロ接合太陽電池の実時間構造制御

第31回アモルファス物質の物性と応用セミナー   85-91   2004年

Real-time observation of the energy band diagram during microcrystalline silicon p-i interface formation

H Fujiwara, M Kondo, A Matsuda

APPLIED PHYSICS LETTERS   83 ( 21 )   4348 - 4350   2003年11月

Origin of the improved performance of high-deposition-rate microcrystalline silicon solar cells by high-pressure glow discharge

T Matsui, M Kondo, A Matsuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS   42 ( 8A )   L901 - L903   2003年8月

Microcrystalline materials and cells deposited by RF glow discharge

M Kondo

SOLAR ENERGY MATERIALS AND SOLAR CELLS   78 ( 1-4 )   543 - 566   2003年7月

Control of plasma chemistry for preparing highly stabilized amorphous silicon at high growth rate

A Matsuda, M Takai, T Nishimoto, M Kondo

SOLAR ENERGY MATERIALS AND SOLAR CELLS   78 ( 1-4 )   3 - 26   2003年7月

Fundamental aspects of low-temperature growth of microcrystalline silicon

M Kondo, H Fujiwara, A Matsuda

THIN SOLID FILMS   430 ( 1-2 )   130 - 134   2003年4月

Interface-layer formation in microcrystalline Si : H growth on ZnO substrates studied by real-time spectroscopic ellipsometry and infrared spectroscopy

H Fujiwara, M Kondo, A Matsuda

JOURNAL OF APPLIED PHYSICS   93 ( 5 )   2400 - 2409   2003年3月

A novel approach for the growth of Rc-Si at a high rate over 3 nm/s

M Tanda, M Kondo, A Matsuda

THIN SOLID FILMS   427 ( 1-2 )   33 - 36   2003年3月

Real-time characterization of free-carrier absorption during epitaxial Si p-layer growth

H Fujiwara, M Kondo, A Matsuda

APPLIED PHYSICS LETTERS   82 ( 8 )   1227 - 1229   2003年2月

An approach to device grade amorphous and microcrystalline silicon thin films fabricated at higher deposition rates

M Kondo, A Matsuda

CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE   6 ( 5 )   445 - 453   2002年10月

Stress-induced nucleation of microcrystalline silicon from amorphous phase

H Fujiwara, M Kondo, A Matsuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   41 ( 5A )   2821 - 2828   2002年5月

Device-grade amorphous silicon prepared by high-pressure plasma

M Isomura, M Kondo, A Matsuda

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   41 ( 4A )   1947 - 1951   2002年4月

Depth profiling of silicon-hydrogen bonding modes in amorphous and microcrystalline Si : H thin films by real-time infrared spectroscopy and spectroscopic ellipsometry

H Fujiwara, M Kondo, A Matsuda

JOURNAL OF APPLIED PHYSICS   91 ( 7 )   4181 - 4190   2002年4月

Micro crystalline silicon nucleation sites in the sub-surface of hydrogenated amorphous silicon

H Fujiwara, M Kondo, A Matsuda

SURFACE SCIENCE   497 ( 1-3 )   333 - 340   2002年1月

Formation of interface defects by enhanced impurity diffusion in microcrystalline silicon solar cells

APPL PHYS LETT   81 ( 16 )   2002年

Importance of the transport isotropy in μc-Si:H thin films for solar cells deposited at low substrate temperature

SVRCEK V, FEJFAR A, FOJTIK P, MATES T, PORUBA A, KOCKA J, NASUNO Y, KONDO M, MATSUDA A

JOURNAL OF NON-CRYSTALLINE SOLIDS   299/302 ( Pt.A )   395 - 399   2002年

Photocarrier Capture properties in a-Si:H

SHIMIZU S, STRADINS P, KONDO M, MATSUDA A

J NON-CRYST SOLIDS   299/302 ( Pt.A )   466 - 470   2002年

Low temperature fabrication of microcrystalline silicon and its application to solar cells

KONDO M, NASUNO Y, MASE H, WADA T, MATSUDA A

J NON-CRYST SOLIDS   299/302 ( Pt.A )   108 - 112   2002年

Amorphous silicon solar cells deposited at high growth rate

NISHIMOTO T, TAKAI M, MIYAHARA H, KONDO M, MATSUDA A

J NON-CRYST SOLIDS   299/302 ( Pt.B )   1116 - 1122   2002年

Less-understood phenomena in the light-induced degradation and photocarrier capture in a-Si:H

STRADINS P, SHIMIZU S, KONDO M, MATSUDA A

J NON-CRYST SOLIDS   299/302 ( Pt.A )   460 - 465   2002年

Pump-probe pulse transient photoconductivity study in amorphous and microcrystalline Si-H

STRADINS P, KONDO M, MATSUDA A

J NON-CRYST SOLIDS   299/302 ( Pt.A )   370 - 374   2002年

Growth of microcrystalline silicon films using deuterium dilution

SUZUKI S, KONDO M, MATSUDA A

J NON-CRYST SOLIDS   299/302 ( Pt.A )   93 - 97   2002年

Chemical-reaction dependence of plasma parameter in reactive silane plasma

Madoka Takai, Tomonori Nishimoto, Michio Kondo, Akihisa Matsuda

Science and Technology of Advanced Materials   2 ( 3-4 )   495 - 503   2001年9月

High-pressure plasma CVD for high-quality amorphous silicon

M Isomura, M Kondo, A Matsuda

SOLAR ENERGY MATERIALS AND SOLAR CELLS   66 ( 1-4 )   375 - 380   2001年2月

Microcrystalline Si films deposited from dichlorosilane using RF-PECVD

LH Guo, M Kondo, A Matsuda

SOLAR ENERGY MATERIALS AND SOLAR CELLS   66 ( 1-4 )   405 - 412   2001年2月

High rate growth of microcrystalline silicon using a high-pressure depletion method with VHF plasma

M Fukawa, S Suzuki, LH Guo, M Kondo, A Matsuda

SOLAR ENERGY MATERIALS AND SOLAR CELLS   66 ( 1-4 )   217 - 223   2001年2月

Nucleation Mechanism of Microcrystalline Silicon Studied by Real Time Spectroscopic Ellipsometry and Infrared Spectroscopy

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDING   609   A2.1.1-A2.1.12   2001年