Updated on 2026/08/08

写真a

 
OHASHI NAOKI
 
Organization
Institute of Integrated Research MDX Research Center for Element Strategy Visiting Professor
Title
Visiting Professor
External link

Degree

  • Dr. Eng.

Research Interests

  • Defect

  • Semiconductor

  • Ceramics

  • Crystal Engineering

  • Interface

  • Solid State Chemistry

  • Solid State Physics

Research Areas

  • Nanotechnology/Materials / Crystal engineering  / Crystal structure analysis; Crystal Growth

  • Nanotechnology/Materials / Inorganic materials and properties

  • Natural Science / Semiconductors, optical properties of condensed matter and atomic physics

Education

  • Tokyo Institute of Technology   Graduate School of Science and Engineering   Department of Inorganic Materials

    1988.4 - 1992.6

      More details

    Country: Japan

    researchmap

  • Tokyo Institute of Technology   School of Engineering   DEAPRTMENT OF INORGANIC MATERIALS

    1984.4 - 1988.3

      More details

    Country: Japan

    researchmap

Research History

  • National Institute for Materials Science   Chief Researcher

    2007.4

      More details

  • National Institute for Materials Science   Principal Researcher

    2003.4 - 2007.3

      More details

  • National Institute for Materials Science   Senior Researcher

    2001.4 - 2003.3

      More details

  • National Institute for Rexearch in Inorganic Materials   Senior Researcher

    2001.1 - 2001.3

      More details

  • National Institute for Research in Inorganic Materials   Senior Researcher

    2000.7 - 2000.12

      More details

  • Massachusetts Institute of Technology   Visiting Scholar

    1999.7 - 2000.6

      More details

  • Tokyo Institute of Technology   Graduate School of Science and Engineering   Assistant Professor

    1999.4 - 1999.6

      More details

  • Tokyo Institute of Technology   School of Engineering   Assistant Professor,

    1993.4 - 1999.3

      More details

  • Postdoctral Research Fellow of Japan Society for Promotion of Science

    1992.4 - 1993.3

      More details

▼display all

Professional Memberships

▼display all

Papers

▼display all

MISC

  • Colossal Electroresistance, impurity effect, and Photoemission Spectroscopy in Pt/Nb:SrTiO3 Schottky Junctions

    大澤健男, 上田茂典, 大橋直樹, 保井晃, 石垣隆正

    日本セラミックス協会秋季シンポジウム講演予稿集(Web)   35th   2022

  • Study of two dimensional electride Y2C probed by muon Knight shift

    Hiraishi M., Hirata K., Otani S., Ohashi N., Kojima K. M., Okabe H., Takeshita S., Koda A., Kadono R., Zhang Xiao, Matsuishi S., Hosono H.

    Meeting Abstracts of the Physical Society of Japan   72 ( 2 )   1333 - 1333   2017

     More details

    Language:Japanese   Publisher:The Physical Society of Japan  

    DOI: 10.11316/jpsgaiyo.72.2.0_1333

    J-GLOBAL

    researchmap

  • Impurity hydrogen site and electronic state in wide-gap semiconductor ZnO as investigated by muon spectroscopy

    Kojima K. M., Hiraishi M., Okabe H., Koda A., Kadono R., Ohashi N.

    Meeting Abstracts of the Physical Society of Japan   72 ( 2 )   2342 - 2342   2017

     More details

    Language:Japanese   Publisher:The Physical Society of Japan  

    DOI: 10.11316/jpsgaiyo.72.2.0_2342

    J-GLOBAL

    researchmap

  • Electrical and optical properties of W-doped ZnO films grown on (112¯0) sapphire substrates using pulsed laser deposition

    Adachi, Y., Saito, N., Hashiguchi, M., Sakaguchi, I., Suzuki, T., Ohashi, N., Hishita, S.

    Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan   122 ( 1430 )   908 - 913   2014.10

     More details

  • ZnO単結晶薄膜にドープされたWの表面偏析

    鈴木拓, 安達裕, 齋藤紀子, 橋口未奈子, 坂口勲, 大橋直樹, 菱田俊一

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   61st   ROMBUNNO.17A-E10-7   2014.3

     More details

    Language:Japanese  

    J-GLOBAL

    researchmap

  • Effect of crystalline polarity on microstructure and optoelectronic properties of gallium-doped zinc oxide films deposited onto glass substrates

    Ogino, T., Williams, J.R., Watanabe, K., Sakaguchi, I., Hishita, S., Haneda, H., Adachi, Y., Ohgaki, T., Ohashi, N.

    Thin Solid Films   552   56 - 61   2014.2

  • MBE法によるサファイア基板上へのScN薄膜のヘテロ成長

    大垣武, 渡邉賢, 坂口勲, 菱田俊一, 大橋直樹, 羽田肇

    エレクトロセラミックス研究討論会講演予稿集   33rd   168 - 169   2013.10

     More details

    Language:Japanese  

    J-GLOBAL

    researchmap

  • 緻密質酸化スズセラミックスの作製におけるZnOおよびSb2O5の添加効果

    橋口未奈子, 坂口勲, 菱田俊一, 大橋直樹

    エレクトロセラミックス研究討論会講演予稿集   33rd   78 - 79   2013.10

     More details

    Language:Japanese  

    J-GLOBAL

    researchmap

  • Journal of the Ceramic Society of Japan A Featured Issue by Guest Editors "Science and Technology for Advanced Sustainable Ceramics" Preface

    Hiroyo Segawa, Yoshio Sakka, Toshiyuki Nishimura, Naoki Ohashi, Yuji Matsumoto, Nobuhiro Matsushita

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   121 ( 1411 )   2013.3

     More details

  • Effect of annealing atmosphere on oxygen diffusion through Ba-Fe-based perovskite oxide

    Watanabe, K., Kida, T., Sakaguchi, I., Ohashi, N., Shimanoe, K., Haneda, H.

    Key Engineering Materials   485   141 - +   2011

  • Grain growth systematics for polycrystalline forsterite ± enstatite and its implications for grain-size sensitive flow of peidotite

    HIRAGA Takehiko, TACHIBANA Chihiro, OHASHI Naoki, SANO Satoru

    Abstracts for Annual Meeting of Japan Association of Mineralogical Sciences   2009   196 - 196   2010.4

     More details

    Language:English   Publisher:Japan Association of Mineralogical Sciences  

    Grain growth kinetics of forsterite (Fo) and enstatite (En) in fine grain aggregates of Fo + En are examined as a function of volume fraction of En.

    DOI: 10.14824/jakoka.2009.0.190.0

    CiNii Books

    researchmap

  • 不純物添加がZnO薄膜の極性に及ぼす影響

    安達裕, 大橋直樹, 坂口勲, 羽田肇, 大西剛, 上田茂典, 吉川英樹, 小林啓介

    応用物理学関係連合講演会講演予稿集(CD-ROM)   57th   ROMBUNNO.17P-TL-10   2010.3

     More details

    Language:Japanese  

    J-GLOBAL

    researchmap

  • Polarity of Al-doped ZnO films grown on sapphire substrates

    Adachi Yutaka, Lippmaa Mikk, Ohashi Naoki, Ohgaki Takeshi, Sakaguchi Isao, Haneda Hajime, Yoshikawa Hideki, Ueda Shigenori, Kobayashi Keisuke, Ohnishi Tsuyoshi

    Preprints of Annual Meeting of The Ceramic Society of Japan<br>Preprints of Fall Meeting of The Ceramic Society of Japan   2008 ( 0 )   231 - 231   2008.9

     More details

    Language:Japanese   Publisher:公益社団法人 日本セラミックス協会  

    ZnOは室温で大きな励起子結合エネルギーを有することから高効率な発光素子への応用が期待されている。ZnOはc軸方向に極性を有し、その極性はZnOの物性に大きな影響を与える。よって、ZnO薄膜の極性制御はデバイス応用にとって重要な課題である。我々は前回、a面サファイヤ基板上に作製した無添加のZnO薄膜は-c極性であるのに対し、Al添加ZnO薄膜は+c極性であることを報告した。本研究ではAl添加濃度および薄膜成長温度がZnO薄膜の極性に与える影響について調査したので、その結果について報告する。

    DOI: 10.14853/pcersj.2008F.0.231.0

    J-GLOBAL

    researchmap

  • (Mg,Zn)O/ZnO Heterostructures Prepared by Pulsed Laser Deposition Reviewed

    Yutaka Adachi, Naoki Ohashi, Isao Sakaguchi, Takeo Osawa, Haruki Ryoken, Hideki Yoshikawa, Shigenori Ueda, Keisuke Kobayashi, Hajime Haneda

    Key Engineering Materials   388   3 - 6   2008.9

     More details

    Language:English   Publisher:Trans Tech Publications  

    ZnO単結晶の亜鉛終端表面および酸素終端表面上に作製した(Mg,Zn)O薄膜の結晶構造、光学特性および電子構造を評価した。(Mg,Zn)O薄膜はパルス・レーザー・デポジション法により作製を行い、Mgを10%添加したターゲットを用いて基板温度700度で蒸着することにより平衡固溶限を超えたMg濃度約40%の(Mg,Zn)O薄膜を得た。酸素終端表面上と亜鉛終端表面上に作製した(Mg,Zn)O薄膜の硬X線光電子分光スペクトルには大きな違いがみられ、それらについて当日報告する。

    DOI: 10.4028/www.scientific.net/KEM.388.3

    researchmap

  • Impurity Contamination and Diffusion during Annealing in Implanted ZnO Reviewed

    Isao Sakaguchi, Yutaka Adachi, Takeshi Ogaki, Kenji Matsumoto, Shunichi Hishita, Hajime Haneda, Naoki Ohashi

    Key Engineering Materials   388   23 - 26   2008.9

     More details

    Language:English   Publisher:Trans Tech Publications  

    通常、イオン注入試料は注入イオンを格子で活性化させるために熱処理が必要である。本研究では酸化亜鉛を取り上げ、イオン注入後の熱処理注入に炉材等からの汚染であるリチウムについて、その汚染具合と表面からの拡散挙動と注入損傷の効果に関する研究結果を報告する。

    DOI: 10.4028/www.scientific.net/KEM.388.23

    researchmap

  • サファイヤ基板上に作製したAl添加ZnO薄膜の+c面成長

    安達裕, 大橋直樹, 大垣武, 大西剛, 坂口勲, 羽田肇, LIPPMAA Mikk

    応用物理学関係連合講演会講演予稿集   55th ( 1 )   534   2008.3

     More details

    Language:Japanese  

    J-GLOBAL

    researchmap

  • Polarity control of ZnO films grown on sapphire substrates

    ADACHI Yutaka, OHASHI Naoki, OHGAKI Takeshi, SAKAGUCHI Isao, HANEDA Hajime, OHNISHI Tsuyoshi, Lippmaa Mikk

    Preprints of Annual Meeting of The Ceramic Society of Japan<br>Preprints of Fall Meeting of The Ceramic Society of Japan   2008 ( 0 )   2P036 - 2P036   2008.3

     More details

    Language:Japanese   Publisher:公益社団法人 日本セラミックス協会  

    ZnO薄膜の極性制御はデバイス応用にとって重要な課題である。本研究ではZnOへの不純物添加が、サファイヤ基板上のZnO薄膜の成長面の極性に及ぼす影響が調査された。無添加およびAl添加ZnO薄膜がa面サファイヤ基板上にPLD法で作製され、その極性がCAICISSによって調査された。その結果、無添加のZnO薄膜は-c極性であるのに対し、Al添加薄膜は+c極性を示すことがわかった。Al添加による極性反転の原因として、基板・薄膜界面における反応層の形成が予測されたが、断面TEM像からは界面近傍の反応層の形成は確認できなかった。

    DOI: 10.14853/pcersj.2008S.0.2P036.0

    J-GLOBAL

    researchmap

  • フォルステライト多結晶体におけるPt固溶度と拡散:コア‐マントル相互作用の素過程

    賞雅朝子, 平賀岳彦, 中井俊一, 小泉早苗, 大橋直樹, 佐野聡

    日本地球化学会年会講演要旨集   55th   196   2008

     More details

  • Evalution of Ion Diffusion in Barium Titanate Ceramics with SIMS

    HANEDA, Hajime, SAKAGUCHI, Isao, NAKAGAWA, Tsubasa, OHASHI, Naoki, RYOKEN, Haruki, HISHITA, Shunichi, ADACHI, Yutaka, ITOH Junichi

    Proseedings of The 23rd International Korea-Japan Seminar on Ceramics   99999 - 99999   2006.11

     More details

    Language:English   Publishing type:Rapid communication, short report, research note, etc. (scientific journal)  

    チタン酸バリウム中の酸素拡散,ならびにHoあるいはNiイオンの拡散を二次イオン質量分析計により評価した結果を報告する.チタン酸バリウムはBa/Ti陽イオン比が1からずれるため,少量の陽イオン,酸素空孔が生じている.それを反映して,無添加試料では大きな酸素拡散係数を示した.また,Hoイオンを添加することで,過剰な酸素空孔が減少することが見出された.

    researchmap

  • Characterization of defect structure in zinc oxide films doped with impurity Reviewed

    RYOKEN, Haruki, SAKAGUCHI, Isao, OGAKI, Takeshi, ADACHI, Yutaka, OHASHI, Naoki, HANEDA, Hajime

    KEY ENGINEERING MATERIALS   75 - 78   2006.1

     More details

    Language:English   Publishing type:Rapid communication, short report, research note, etc. (scientific journal)  

    酸化亜鉛のバンドギャップは酸化マグネシウム添加によって拡張することが可能であり,紫外光検出器や紫外レーザーへの応用に向けた,(Zn,Mg)O薄膜やAl:(Zn,Mg)O薄膜の電気的・光学的特性が研究されている.しかし,こうした酸化亜鉛基固溶体薄膜についての欠陥化学的アプローチは,ほとんどなされていない.例えば、(Zn,Mg)O薄膜の紫外線センサー応用において、そのバンド端近傍の光吸収特性は、極めて重要である。これまでに得られている(Zn,Mg)O薄膜の光吸収スペクトルでは,吸収端は高エネルギー側にシフトするが,その立ち上がりが急峻でない場合が多く、この吸収端のブロードニングは,Mg添加による欠陥生成に起因すると考えられる.応用を進める上では、急峻な吸収端を持った(Zn,Mg)Oの合成が必要である。そこで,本研究では,(Zn,Mg)O薄膜,Al:(Zn,Mg)O薄膜の欠陥状態について,固相拡散の観点から議論した。

    researchmap

  • Preparation and structural analysis of micro-patterned Pb(Zr,Ti)O <inf>3</inf> film by metalorganic chemical vapor deposition

    Yokoyama, S., Takahashi, K., Okamoto, S., Nagai, A., Minamidate, J., Saito, K., Ohashi, N., Haneda, H., Sakata, O., Kimura, S., Nishida, K., Katoda, T., Funakubo, H.

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   45 ( 6 A )   pp.5102-5106.   2006

  • Oxygen diffusion and defect structure of (Zn,Mg)O films Reviewed

    RYOKEN, Haruki, SAKAGUCHI, Isao, OHASHI, Naoki, ADACHI, Yutaka, HISHITA, Shunichi, HANEDA, Hajime

    Proceedings of The 22nd International Japan-Korea Seminar on Ceramics   335 - 338   2005.11

     More details

    Language:English   Publishing type:Rapid communication, short report, research note, etc. (scientific journal)  

    As for thin film, magnesium oxide dissolves in ZnO with wurtzite structure beyond the equilibrium solubility. The excess MgO exsolutes from the wurtzite lattice during annealing process. We determined solubility of MgO in wurtzite ZnO solid solution by thermal annealing. The structural results suggest that this system has solubility of MgO in the range, x=0.12 to 0.18. Although no secondary phas

    researchmap

  • Interfacial structure of InN films grown on ZnO (0001) and (000-1) substrates prepared by MBE method

    Ohgaki Takeshi, Ohnishi Tsuyoshi, Ryoken Haruki, Ohashi Naoki, Sakaguchi Isao, Lippmaa Mikk, Haneda Hajime, Yasumori Atsuo

    Preprints of Annual Meeting of The Ceramic Society of Japan<br>Preprints of Fall Meeting of The Ceramic Society of Japan   2005 ( 0 )   471 - 471   2005

     More details

    Publisher:公益社団法人 日本セラミックス協会  

    酸化亜鉛(ZnO)単結晶上に窒化インヂウム(InN)薄膜を作製し、その構造について検討した。InN薄膜はMBE法によって作製し、基板は市販の水熱合成で育成されたZnO単結晶の0001面、000-1面を用いた。薄膜の構造は、X線回折、TEM観察、CAICISSによって評価し、また、界面組成はSIMS、発光特性はPL・CL測定で調べた。(000-1)上に作製したInN薄膜は、成長初期に大きな格子ミスマッチに起因すると思われる結晶性の低い層が成長し、その後、極めて結晶性の高い膜が成長することが確認された。一方、(0001)上に作製したInN薄膜は、結晶性の低い薄膜しか得られなかった。

    researchmap

  • Micro-patterning of ZnO single crystal surface by anisotropic wet-chemical etching

    Takahashi, K., Funakubo, H., Ohashi, N., Haneda, H.

    Thin Solid Films   486 ( 1-2 )   42 - 45   2005

  • Electrical properties of beta-FeSi2 thin films on insulating substrates

    K Akiyama, T Kimura, S Nishiyama, T Hattori, N Ohashi, H Funakubo

    CRITICAL INTERFACIAL ISSUES IN THIN-FILM OPTOELECTRONIC AND ENERGY CONVERSION DEVICES   796 ( V2.10 )   121 - 126   2004

     More details

    Language:English  

    Web of Science

    researchmap

  • Nitrogen ion behavior on polar surfaces of ZnO single crystals

    Maki, H., Sakaguchi, I., Ohashi, N., Sekiguchi, S., Haneda, H., Tanaka, J., Ichinose, N.

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   42 ( 1 )   75 - 77   2003.1

     More details

    Language:English   Publisher:Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyo  

    Scopus

    CiNii Books

    researchmap

  • Magnetization and electric properties of Pr-doped ZnO

    Ohashi, N., Mitarai, S., Fukunaga, O., Tanaka, J.

    Journal of Electroceramics   4 ( SUPPL. 1 )   2000

  • Synthesis of ZnO bicrystals doped with Co or Mn and their electrical properties

    Ohashi, N., Terada, Y., Ohgaki, T., Tanaka, S., Tsurumi, T., Fukunaga, O., Haneda, H., Tanaka, J.

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   38 ( 9 A )   5028 - 5032   1999.9

     More details

    Language:English   Publisher:The Japan Society of Applied Physics  

    DOI: 10.1143/JJAP.38.5028

    Scopus

    CiNii Books

    researchmap

    Other Link: https://jlc.jst.go.jp/DN/JALC/00063487244?from=CiNii

  • Yellow Emission from Zinc Oxide giving an Electron Spin Resonance Signal at g = 1.96

    Naoki Ohashi, Tomokazu Nakata, Takashi Sekiguchi, Hideo Hosono, Masafumi Mizuguchi, Takaaki Tsurumi, Junzo Tanaka, Hajime Haneda

    Japanese Journal of Applied Physics, Part 2: Letters   38 ( 2 A )   L113 - L115   1999.2

     More details

    Language:English   Publisher:Japan Society of Applied Physics  

    DOI: 10.1143/JJAP.38.L113

    Scopus

    researchmap

  • Cathodoluminescence and photoluminescence of zinc-oxide single crystals grown by a flux method

    Ohashi, N., Ohgaki, T., Nakata, T., Tsurumi, T., Sekiguchi, T., Haneda, H., Tanaka, J.

    Journal of the Korean Physical Society   35 ( SUPPL. 2 )   1999

     More details

  • Fabrication of ZnO bi-crystals with twist boundaries using Co doped ZnO single crystals

    Ohashi, N., Terada, Y., Ohgaki, T., Tsurumi, T., Fukunaga, O., Haneda, H., Tanaka, J.

    Journal of the Korean Physical Society   35 ( SUPPL. 2 )   1999

     More details

  • Auger electron spectra of praseodymium- and cobalt-doped ZnO varistor

    N Ohashi, S Tanaka, T Tsurumi, J Tanaka, O Fukunaga

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   106 ( 9 )   914 - 919   1998.9

     More details

  • Variation of La 3d photoelectron spectra of La1.9Sr1.1−xCaxCu2O6+δ

    Naoki Ohashi, Takashi Ohyama, Mirnoru Takemoto, Takaaki Tsurumi, Junzo Tanaka, Osamu Fukunaga

    Physica C: Superconductivity   298 ( 1-2 )   73 - 79   1998.3

     More details

    Language:English   Publisher:Elsevier {BV}  

    DOI: 10.1016/s0921-4534(98)00070-7

    Scopus

    researchmap

  • Variation of La 3d photoelectron spectra of La1.9Sr1.1-xCaxCu2O 6+δ

    Naoki Ohashi, Takashi Ohyama, Mirnoru Takemoto, Takaaki Tsurumi, Junzo Tanaka, Osamu Fukunaga

    Physica C: Superconductivity and its Applications   298 ( 1-2 )   73 - 79   1998.3

     More details

    Language:English   Publisher:Elsevier  

    DOI: 10.1016/S0921-4534(98)00070-7

    Scopus

    researchmap

  • Growth of orthorhombic SrCuO2 by a traveling solvent floating zone method and its phase transformation under high pressure

    Naoki Ohashi, Kazutaka Fujiwara, Takaaki Tsurumi, Osamu Fukunaga

    Journal of Crystal Growth   186 ( 1-2 )   128 - 132   1998.3

     More details

    Language:English   Publisher:Elsevier  

    DOI: 10.1016/S0022-0248(97)00470-3

    Scopus

    researchmap

  • Phase stability of tetragonal SrCuO2-type compounds in the (Sr,Ca)CuO2 system

    Naoki Ohashi, Hiroshi Imagawa, Takaaki Tsurumi, Osamu Fukunaga

    Physica C: Superconductivity   278 ( 1-2 )   71 - 77   1997.4

     More details

    Language:English   Publisher:Elsevier {BV}  

    DOI: 10.1016/s0921-4534(97)00089-0

    Scopus

    researchmap

  • Phase stability of tetragonal SrCuO2-type compounds in the (Sr,Ca)CuO2 system

    Naoki Ohashi, Hiroshi Imagawa, Takaaki Tsurumi, Osamu Fukunaga

    Physica C: Superconductivity and its Applications   278 ( 1-2 )   71 - 77   1997.4

     More details

    Language:English   Publisher:Elsevier  

    DOI: 10.1016/S0921-4534(97)00089-0

    Scopus

    researchmap

  • Electronic States of Ni ion in Diamond studied by a Discrete-Variational Xalpha Method

    Ohashi Naoki, Fukunaga Osamu, Isoya Junichi, Tanaka Junzo

    Jpn. J. Appl. Phys,(1997),36, 1126-1131   36 ( 3 )   1126 - 1131   1997

     More details

    Language:English   Publisher:The Japan Society of Applied Physics  

    The electronic states of nickel in diamond were calculated by a discrete-variational Xα (DV-Xα ) method. Model clusters used for substitutional and interstitial Ni sites were [ NiC28H36]- (Nis- center) and [NiC30H40]+ ( Nii+ center), respectively. Superhyperfine constants for electron paramagnetic resonance (EPR) spectra were estimated from results of DV-Xα calculation and were compared with measured values. A triply degenerate state with total spin S=3/2 appears in the Nis--center and a half-filled doubly degenerate state with total spin S=1/2 appears in the Nii+-center. The total spin and electron occupancy of these clusters agree with the assignments of the EPR spectra. The electron population analysis result indicated that the Ni+ ion at the tetrahedral interstitial site formed more ionic bonding than the Ni- ion at the substitutional site. Superhyperfine interactions between Ni and the nearest-neighbor carbons were calculated as a function of Ni-C bond length, suggesting that a lattice relaxation occurred for the Ni-C bond to be elongated in the Nis- center.

    DOI: 10.1143/JJAP.36.1126

    researchmap

  • Chemical State Analysis of Grain Boundaries in ZnO Varistors by Auger Electron Spectroscopy

    Tanaka, S., Akita, C., Ohashi, N., Kawai, J., Haneda, H., Tanaka, J.

    Journal of Solid State Chemistry   105 ( 1 )   36 - 43   1993

     More details

  • Metal-semiconductor transition in oxygen-deficient layered perovskite compounds of Sr4V3O10−δ

    Naoki Ohashi, Yoshinobu Teramoto, Hiroyuki Ikawa, Osamu Fukunaga, Junzo Tanaka

    Journal of Solid State Chemistry   97 ( 2 )   434 - 442   1992.4

     More details

    Language:English   Publisher:Elsevier {BV}  

    DOI: 10.1016/0022-4596(92)90053-x

    Scopus

    researchmap

  • Metal-semiconductor transition in oxygen-deficient layered perovskite compounds of Sr4V3O10-δ

    Naoki Ohashi, Yoshinobu Teramoto, Hiroyuki Ikawa, Osamu Fukunaga, Junzo Tanaka

    Journal of Solid State Chemistry   97 ( 2 )   434 - 442   1992

     More details

  • Carrier behavior in the T*-phase of (Ln<inf>1-x-y</inf>,Ln′<inf>x</inf>,Sr<inf>y</inf>)<inf>2</inf>CuO<inf>4-δ</inf>

    Ohashi, N., Ikawa, H., Fukunaga, O., Kobayashi, M., Tanaka, J.

    Physica C: Superconductivity and its applications   177 ( 4-6 )   1991

▼display all

Awards

  • de Chevalier de l’Ordre national du Mérite

    2019.1   République française  

     More details

  • Le Doctorat Honoris Causa à l'Université de Rennes 1

    2018.4   Université de Rennes 1, France  

     More details

  • Outstanding Paper Award, Journal of Ceramics Society of Japan

    2017.6   Ceramics Society of Japan  

     More details

  • Outstanding Paper Award, Journal of Ceramics Society of Japan

    2015.6   Ceramics Society of Japan   Effects of dielectric film surface on oxygen diffusion

     More details

  • Outstanding Paper Award, Journal of Ceramics Society of Japan

    2015.6   Ceramics Society of Japan   Influence of substrate nitridation on GaN and InN growth by plasma-assisted molecular-beam epitaxy

     More details

  • Ceramics Society of Japan Awards for academic achievements in ceramic science and technology

    2012.6   Ceramics Society of Japan  

     More details

  • Richard M. Fulrath Award

    2009.10   The American Ceramics Society  

     More details

  • Poster Award, 2004 MRS Fall Meeting

    2004.12   Materials Research Society   Crystallinity and Polarity of III-V Nitride Semi conductors Grown on ZnO

     More details

  • Ceramics Society of Japan Award for Advancements in Ceramic Science and Technology

    1999.5   Ceramics Society of Japan  

     More details

  • Outstanding Paper Award, Journal of Ceramics Society of Japan

    1999.5   Ceramics Society of Japan   Auger Electron Spectra ofPraseodymium-and Cobalt-Doped ZnO Varistor

     More details

  • Fellow

    Ceramics Society of Japan  

     More details

▼display all

Research Projects

  • 局所構造デザインによる高温圧電結晶の高性能化とセンサ開発

    Grant number:26K01588  2026.4 - 2029.3

    日本学術振興会  科学研究費助成事業  基盤研究(B)

    武田 博明, 大橋 直樹, 助永 壮平

      More details

    Grant amount:\18330000 ( Direct Cost: \14100000 、 Indirect Cost:\4230000 )

    researchmap

  • 結晶構造の対称性に着目した有機ー無機ハイブリッドハライド結晶の合成と機能探索

    Grant number:21K04646  2021.4 - 2024.3

    日本学術振興会  科学研究費助成事業 基盤研究(C)  基盤研究(C)

    齋藤 紀子, 大橋 直樹

      More details

    Grant amount:\4160000 ( Direct Cost: \3200000 、 Indirect Cost:\960000 )

    有機-無機ハイブリッドハライド結晶は、次世代太陽電池の候補として注目されているが、接触感知フレキシブルデバイスなどの、軽量で柔軟な圧電デバイス応用にも期待できる。そのためには、ハイブリッドハライドの有機分子の自発的配向誘起による、結晶の対称性制御が必要である。本研究では、大きさの異なる有機分子の導入と、3d遷移金属元素を用いた無機フレームワークの構造変化を試み、結晶対称性への影響を調べる。溶液プロセスによって新物質を合成し、単結晶構造解析と密度汎関数法(DFT)計算によって有機分子イオンの配向を調べ、圧電体などへの応用を検討する。
    ピエゾ電気特性を含む興味深い光電子物性を有する新規化合物の探索を目的として、ホルムアミジニウム(FA)-銅(Cu)-ヨウ化物(I)三元系における有機-無機ハイブリッド結晶の作製と解析を実施した。CsCu2I3と同じ構造型で結晶化させたFACu2I3結晶を、ホスフィン酸を用いた溶液法で合成した。実験的に精密化された結晶構造と理論的にシミュレーションされた結晶構造は、互いによく一致した。解析の結果、一次元の[Cu2I3]-鎖を持つFACu2I3は、圧電構造ではなく、中心対称性を持つ常誘電構造が最も安定な相であることが示された。さらに、FACu2I3は紫外光照射下で発光を示さなかった。発光特性を持たない理由を、水素結合を考慮した電子構造シミュレーションにより検討した。

    researchmap

  • Exploring of I-III-VI2 oxide semiconductors and their new functions

    Grant number:25630283  2013.4 - 2015.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Challenging Exploratory Research  Grant-in-Aid for Challenging Exploratory Research

    OMATA Takahisa, OHASHI Naoki, YANAGI Hiroshi

      More details

    Grant amount:\4030000 ( Direct Cost: \3100000 、 Indirect Cost:\930000 )

    Crystal structure of β-CuGaO2 was refined and its stability was evaluated using TG-DTA and high temperature XRD. Aa a result, this material is a metastable phase, but practically stable <300°C even under oxygen atmosphere. Impurity doping was attempted, and possibility of carrier injection by impurity doping was suggested. Based on the first principles density functional calculation, it was shown that β-CuGaO2 intensely absorb light around the fundamental absorption edge; therefore, it was shown that this material is a promising oxide semiconductor as a solar cell absorber.

    researchmap

  • Invention and itsguiding principle of new alloying system of zinc oxide realizing optoelectronic function in visible lights

    Grant number:23656402  2011 - 2012

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Challenging Exploratory Research  Grant-in-Aid for Challenging Exploratory Research

    OMATA Takahisa, OHASHI Naoki

      More details

    Grant amount:\3900000 ( Direct Cost: \3000000 、 Indirect Cost:\900000 )

    The novel pseudo-binary alloy system (1-x)ZnO-x(AgGaO2)1/2i s demonstrated by rf-magnetron sputtering using mixed powders of ZnO and β-AgGaO2with various mixing ratio as target materials. The energy band gap of ZnO is decreased with the increasing the AgGaO2concentration, and it reaches to 2.55eV (485nm). This alloy system is non-toxic unlike the previous reported alloy, i.e, ZnO-CdO, then this is suitable for the practical applications of ZnO in visible light region.

    researchmap

  • Charge separation of photo-excited electric charge carriers and its interaction with internal electric filed induced by crystalline polarity

    Grant number:23651081  2011 - 2012

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Challenging Exploratory Research  Grant-in-Aid for Challenging Exploratory Research

    OHASHI Naoki, HANEDA Hajime, SAKAGUCHI Isao, ADACHI Yutaka, HISHITA Shunichi, OHGAKI Takeshi

      More details

    Grant amount:\3900000 ( Direct Cost: \3000000 、 Indirect Cost:\900000 )

    Characterization of surface electronic structure of oxide crystal was investigated by means of x-ray photoelectron spectroscopy. The surface of specimen was well polished to obtain damage free surface by chemical mechanical polishing using colloidal silica nano-particles. As a result, we obtained the trace of specific electronic states originated in the polarity of crystal and identification of the electronic states by using density functional theory calculation has been done. Deposition of polarity controlled crystals was also demonstrated.

    researchmap

  • Evaluation of high frequency properties of transparent zinc oxide thin films and their application

    Grant number:22360277  2010 - 2012

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)  Grant-in-Aid for Scientific Research (B)

    HANEDA Hajime, OHASHI Naoki, SAKAGUCHI Isao, ADACHI Yutaka, OGAKI Takeshi, HISHITA Shunichi, SAITO Noriko

      More details

    Grant amount:\19110000 ( Direct Cost: \14700000 、 Indirect Cost:\4410000 )

    In order to promote modern communications equipment and communication networks, issues for miniaturization and inhibition of interference in high-frequency module, such as antenna, grew increasingly apparent. To overcome them, we are developing transparent device for the high-frequency applications. Adapting this concept, space for display can be used for mounting the transparent high-frequency devices. In this study, properties at high-frequencyof transparent thin films, such as ZnO of which studies had not been enough, are evaluated, and optimize structure of the transparent device at high-frequency is proposed.

    researchmap

  • Research on Physics and Chemistry of ZnO and its related alloy crystal wafers aiming to utilization of ZnO based devices

    Grant number:20246007  2008 - 2010

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A)  Grant-in-Aid for Scientific Research (A)

    OHASHI Naoki, SAKAGUCHI Isao, WADA Yoshiki, HANEDA Hajime, ADACHI Yutaka, ISHIGAKI Takamasa, OGAKI Takeshi, YOSHIKAWA Hideki, UEDA Shigenori

      More details

    Grant amount:\49400000 ( Direct Cost: \38000000 、 Indirect Cost:\11400000 )

    Surface planarization process was optimized for device application of (Zn, Mg)O alloy wafers and physical properties of the wafers were evaluated for realistic designing of (Zn, Mg)O based devices.

    researchmap

  • 特異的準安定ナノ構造セラミックスの電子輸送特性に関する研究

    Grant number:20360296  2008

    日本学術振興会  科学研究費助成事業 基盤研究(B)  基盤研究(B)

    藤本 正之, 羽田 肇, 大橋 直樹

      More details

    Grant amount:\10140000 ( Direct Cost: \7800000 、 Indirect Cost:\2340000 )

    本研究では抵抗変化型不揮発性メモリーのビット材料として研究されている酸化物セラミックス電子材料の数桁にもおよぶ高速の抵抗変化現象を電子輸送特性と特異的な準安定ナノ結晶の構造変化に着目して、従来仮定の域を出ていない通称「フィラメントパス」と「ナノドメインスイッチ」が如何なるものなのかを明らかにすることを目的とした。特に、今まで研究代表者の研究では、所有設備との関係から各種電子物性の温度依存性を測定していなかった。しかし、所属機関が変わったことから、温度依存性測定を行うことが可能となるため、本年度は、活性化エネルギーなどを電子物性の温度依存性を調べることで動作原理のより本質的な部分へとアプローチすることを計画した。こうした研究目的に基づき、実験の準備を進めた。

    researchmap

  • Fabrication of functionalized materials by realizing appropriate doping technology

    Grant number:19053008  2007 - 2011

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research on Priority Areas  Grant-in-Aid for Scientific Research on Priority Areas

    TANIGUCHI Takashi, HIRAGA Keijiro, YOSHIDA Hidehiro, SAKAGUCHI Isao, WADA Yoshiki, OHASHI Naoki

      More details

    Grant amount:\38900000 ( Direct Cost: \38900000 )

    The aim of this study is to obtain high quality functionalized materials by realizing appropriate doping technology under the variety of synthesis process, including high pressure and high temperature process, solid-state reaction, and thin film growth technique. By cooperating with the researchers in theoretical and ultimate structural analysis field, we tried to control the effective doping technology for the functionalized nitride and oxide ceramic materials. Successful doping with large misfit in highly covalent rigid crystals was achieved. Theoretical and structural analyses clearly show the occupancy site in the crystal by defect complex model. This fact suggests the way of functionalization by doping in the large lattice misfit systems. New multifunctional oxide polycrystalline materials have been developed through the atomic modification which controls high temperature matter transport in grain boundary and interface. Synthesis and characterization of oxide semiconductor films were performed aiming to develop electronic devices by utilizing the advantages in the concept of Nano-Dopant.

    researchmap

  • Synthesis of compound-semiconductor superlattice structures with isotopic modulation and their properties

    Grant number:19201019  2007 - 2009

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A)  Grant-in-Aid for Scientific Research (A)

    HANEDA Hajime, OHASHI Naoki, WADA Yoshiki, SAKAGUCHI Isao, YUSA Hitoshi, ADACHI Yutaka, HISHITA Shunichi, SAITO Noriko, OHGAKI Takeshi, ISHIOKA Kunie, KITAJIMA Masahiro

      More details

    Grant amount:\48100000 ( Direct Cost: \37000000 、 Indirect Cost:\11100000 )

    The isotope-modulated superlattice structures of zinc oxide (ZnO), gallium nitride (GaN) and aluminum nitride (AlN), that are wide bandgap semiconductors, were synthesized successfully. The isotope with same electronic state and different mass number were intentionally distributed in these thin films. The changes of lattice vibrations, crystallographic properties and optical properties of these thin films were investigated. Furthermore, precisely measurements of the mass difference of isotope using a secondary ion mass spectrometry (SIMS) were carried out to calculate the diffusion coefficients exactly. Based on these experimental results, the lattice defect structure of thin films and the growth mechanism of particles were clarified successfully.

    researchmap

  • 反強磁性-強磁性積層ナノグラニュラー磁性体薄膜の合成と評価

    Grant number:16656216  2005 - 2006

    日本学術振興会  科学研究費助成事業 萌芽研究  萌芽研究

    藤本 正之, 大橋 直樹

      More details

    Grant amount:\2800000 ( Direct Cost: \2800000 )

    ナノグラニュラー磁性体薄膜は、非磁性体絶縁体によって分離された各ナノ交互に積層化することにより、面内にはランダム、膜厚方向には制御されて近接磁性粒子と相互作用することを既に我々はその高周波磁気特性とHRTEMによるナノ構造解析により明らかにしている。そこで磁性粒子層を強磁性体Fe100%とFe-Mn(Mn30%)の反強磁性体との2層を絶縁層と交互に積層化することにより、反強磁性-強磁性相互作用を利用した異方性磁界の制御を試みた。Fe強磁性体ナノグラニュラー層とこれに絶縁層を挟んで交互に積層されたFe-Mnナノグラニュラー層のFe-MnのMnの量を少しずつ増やしていくと、Mn量が0%の時にμ=2000、Hk=11.1であったものが、μが次第に減少するかわりに、Hkが増大していき、反強磁性領域のMn量30%の時には、μ=30、Hk=241.3となり、Feナノグラニュラー強磁性層とFe-Mn反強磁性層とが磁気カップリングをおこしていることが推定された。このようにFe-Mnナノグラニュラー層のMn量を制御することによって異方性磁界の制御が可能であることが判明した。HRTEMによって面内方向のナノグラニュラー磁性層の分離状態、絶縁層膜厚などのナノ構造の最終確認を行った後にAppl.Phys.Lett.に投稿する予定である。

    researchmap

  • 酸化亜鉛基光・電子素子を目指した、欠陥と不純物の化学状態解明とその制御

    Grant number:03F03541  2005

    日本学術振興会  科学研究費助成事業 特別研究員奨励費  特別研究員奨励費

    大橋 直樹, WANG Y. G.

      More details

    Grant amount:\500000 ( Direct Cost: \500000 )

    researchmap

  • パルス変調ICPと固体の化学的相互作用を活用したセラミックス材料の高機能化

    Grant number:14658135  2002 - 2003

    日本学術振興会  科学研究費助成事業 萌芽研究  萌芽研究

    石垣 隆正, 大橋 直樹

      More details

    Grant amount:\3400000 ( Direct Cost: \3400000 )

    研究代表者らが新しく開発したパルス変調高周波熱プラズマ〔PM-ICP〕は、従来にない特異な反応場を提供する。PM-ICPの重要な特徴として、通常高温熱源として利用される熱プラズマの化学的側面が顕在化されることが見いだされた。すなわち、水素ラジカルのように高化学活性な化学種を高濃度に発生するプラズマ源として働く。このプラズマ源を材料プロセスに応用する第一歩として、酸化亜鉛セラミックスへのプラズマ処理を行い、プラズマ特性と酸化亜鉛の発光特性の関係を調べ、高効率紫外発光デバイスへの応用に資することをめざした。
    14年度の研究で、酸化亜鉛中への数十ppmの水素溶解が高効率紫外発光と関係することを見いだした。本年度は、水素ドーピング機構の解明をめざした。そのために、格子欠陥の種類が異なる数種の試料を準備して、水素プラズマ照射処理を行い、発光との関連をしらべた。その結果、水素が酸化亜鉛中に溶解するときには電子を放出すること、さらに、酸化亜鉛中に電子を受け取れる格子欠陥があるときのみ、格子中に水素が溶解し格子欠陥が補償されてバンド端発光である波長約380nmの紫外発光が発現することがわかった。さらに、プラズマの化学組成を変化させて、プラズマから酸化亜鉛試料への熱伝導を制御することにより、緩やかな試料加熱が水素のドーピングにちょうどいいエネルギーを与え、試料の温度上昇による水素脱離を抑制して水素溶解が最適化されることも見いだした。

    researchmap

  • リソグラフィーによる微細加工を利用した焼結体構造・機能模倣素子の試作

    Grant number:14655245  2002 - 2003

    日本学術振興会  科学研究費助成事業 萌芽研究  萌芽研究

    大橋 直樹, 坂口 勲, 羽田 肇

      More details

    Grant amount:\3400000 ( Direct Cost: \3400000 )

    電子ビームリソグラフィーによる酸化亜鉛単結晶の微細加工を実施した。加工の対象として、000-1面、10-10面、および、11-20面を持った酸化亜鉛単結晶を用いた。これらの単結晶に電子ビーム露光用レジストを塗布し、電子ビームにて露光処理を施した後に、酸溶液に浸すことで、化学エッチングを施した。エッチングの際には、酸溶液の種類、濃度がエッチング解像度に及ぼす影響を検討した。また、上記のレジスト材料以外に、レジスト剤の導電性がエッチング処理の結果に及ぼす影響を明らかにするために、リフトオフプロセスで形成した絶縁体マスクを用いたエッチングも実施した。その結果、酸の濃度、すなわち、pHがもっともエッチング解像度に影響していることがわかうた。すなわち、エッチングに用いる溶液のpHを大きくすることによって、エッチングの解像度を高めることが可能となった。pHが小さなエッチング液を用いた場合には、マスクの下側に潜り込むようなエッチングが認められ、エッチング解像度は低く抑えられた。これらの検討から、薄い酸、すなわち、高いpHを持ったエッチング液を用いたときに、高解像度のケミカルエッチングが可能であることがわかった。また、面方位依存性の検討から、10-11面が露出してエッチングが修了する異方性エッチングがすべての面方位において観察された。
    得られた酸化亜鉛バリスタ焼結体模倣構造に対して、その電子構造の詳細な検討を加えた。過渡容量分光法による測定から、酸化亜鉛単結晶には、0.3eVの粒内トラップ準位が形成されていることがわかり、また、粒界部には、1eVの界面準位が形成されていることがわかった。この界面準位の起源は、酸化亜鉛中に添加されたCoに関係した准尉であることが推定された。また、交流インピーダンス測定においても、周波数依存性の挙動に、誘電緩和の現象が捉えられ、界面準位の形成についての情報が得られた。
    また、誘電体系コアシェル型構造体については、高分解能SSIMSを用いた評価によって、その組成分布を明らかにした。

    researchmap

  • Proposal of new material for ferroelectric thin film memories and method to evaluate material properties.

    Grant number:11555233  1999 - 2001

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)  Grant-in-Aid for Scientific Research (B)

    TSURUMI Takaaki, YAMASHITA Yahachi, OHASHI Naoki, WADA Satoshi

      More details

    Grant amount:\13700000 ( Direct Cost: \13700000 )

    The purpose of the present research was 1) to develop a new ferroelectric material which could be crystallized below 450 ℃ and 2) to establish the method to measure the polarization vs. electric-field (P-E) hysteresis curves at high frequencies. These are considerably important to realize the ferroelectric thin film memories(FeRAMs). For the first purpose, we have proposed (Pb,Sr)TiO_3 as a ferroelectric material and thin films of this material were prepared by the sputtering process. The relation between the substrate temperature and the chemical composition of the films was first studied and it was confirmed that the lead component in the films was reduced with increasing substrate temperature. DC-bias field was applied to the substrate during the deposition. Negative field markedly reduced the deposition rate of lead component. By optimizing the deposition conditions, the crystallization temperature of PST was decreased as low as 430 ℃. The addition of Bi improved the remanent polarization up to 20 μC/cm_2. On the other hand, for the second purpose, we have employed a high-speed operation amplifier as a current-voltage converter in the measuring system and the displacive current through the PZT thin film was converted to the voltage signal followed by integrating to calculated polarization. The coercive field (E_c) of the PZT thin films strongly depended on the measuring frequency, nevertheless their remanent polarization was almost independent of it. The domain switching kinetics of PZT thin films could be explained by the nucleation-controlled model. A guideline to make FeRAMs with a high operating speed was proposed.

    researchmap

  • CRYSTAL CHEMICAL STUDY ON 90°DOMAIN SWITCHING PEROVSKITE TYPE FERROELECTRICS

    Grant number:10650663  1998 - 1999

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C)  Grant-in-Aid for Scientific Research (C)

    TSURUMI Takaaki

      More details

    Grant amount:\3600000 ( Direct Cost: \3600000 )

    There are two domain structures, 180 degree domains and 90 degree domains, in tetragonal perovskite type ferroelectrics. The 90 degree domains can be reorientated by an external electric field. The 90 degree domain reorientation induces the changes in strain and polarization, therefore, it is very important to understand the behavior of the reorientation for practical application of ferroelectric materials. This study was carried out for the purpose of understanding crystal chemical characters dominating the 90 degree domain- reorientation behaviors in lead titanate (PT)-based materials and lead titanate-lead zirconate solid solutions (PZT).
    The relationship between the crystal structures and properties was investigated for (Pb, R)TiOィイD23ィエD2(R=Ca, Sr, Ba) ceramics with different tetragonarity (c/a ratio). It was found that the coercive field which determines the easiness of the domain-reorientation depended on the c/a ratio, while the spontaneous polarization was depended on the alkali earth elements incorporated into PT. The (Pb,Sr)TiOィイD23ィエD2 showed the largest spontaneous polarization in the three specimens with c/a ratio = 1.03. In order to understand the origin of the difference in the spontaneous polarization, the crystal structure analysis was carried out using the Rietveld method. The result of analysis indicated that the displacement of Ti ion from the ideal position of cubic perovskite structure was largest in (Pb, Sr)TiOィイD23ィエD2, which explained the large spontaneous polarization.
    The dynamic behavior of the 90 degree domain-reorientation in PZT ceramics was investigated from the measurement of the frequency dependence of electric field induced strains using a Mach-Zehnder type laser interferometer. It was found that the reorientation had a velocity limit and a piezoelectric relaxation was observed at ca. 10kHz. This method gave the information of the contribution of 90 degree domain reorientation to the piezoelectric strains.

    researchmap

  • Preparation and properties of ferroelectric/semiconductor hybrid-lattice inrefaces

    Grant number:08455295  1996 - 1997

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)  Grant-in-Aid for Scientific Research (B)

    TSURUMI Takaaki, KAMIYA Toshio, OHASHI Naoki

      More details

    Grant amount:\7700000 ( Direct Cost: \7700000 )

    The object of the present study is to make oxide (ferroelectrics) / semiconductor hybrid-lattice interfaces and to clarify the electric and/or optic properties of heterostructures having the above interfaces. The results obtained were summarized as follows.
    1) Strontium oxide thin films were epitaxially grown on a hydrogen-terminated Si (111) surface by a molecular beam exitaxy (MBE) process. The hydrogen termination process was essentially important to obtain an oxide/Si hybrid-lattice interface.
    2) A full automatic deposition control system was developed for MBE process to realize an atomic-layr epitaxy with the resolution below mono-layr. Artificial superlattices and artificially modulated structures of strontium titanate (STO) and barium titanate (BTO) were prepared by this system. Clean interfaces with a perfect lattice matching (hybrid-lattice interface) were obtained. The ferroelectric properties of the modulated structures were found to be different from that of a simple solid solution of STO and BTO.
    3) A ferroelectric lithium tantalate/semi-conductive zinc oxide heterostructure was prepared on a sapphire substrate and its optical property was measured by a spectroscopic ellipsometer. Software for operation and analysis of ellipsometry was newly developed to solve various problems existing in the ellipsometry of transparent films. The optical constants determined by this system was well consistent with the reported data for bulk specimens.

    researchmap

  • ドナー濃度を制御した単結晶を用いた界面準位の結晶方位依存性の評価

    Grant number:08750778  1996

    日本学術振興会  科学研究費助成事業 奨励研究(A)  奨励研究(A)

    大橋 直樹

      More details

    Grant amount:\1000000 ( Direct Cost: \1000000 )

    コバルト(Co)を添加した酸化亜鉛単結晶を育成し、育成された結晶に熱処理を施すことによって、結晶中のドナー濃度を変化させた。Hall効果によって測定されたCo添加結晶のキャリアー濃度の組成依存性から、Co添加結晶中の浅いドナーとなる欠陥準位の特質は、育成雰囲気によって決定され、育成後の熱処理では変化しにくいことを見いだした。また、熱処理条件の異なる結晶のカソードルミネッセンス測定から欠陥準位のエネルギー分散が熱処理によって変化しており、また、その変化が、Hall測定で得られたキャリアー濃度と相関していることが示された。さらに、酸素表面と亜鉛表面ではカソードルミネッセンススペクトルに違いがあることが見いだされ、界面準位形成において結晶方位依存性がある可能性が示された。
    酸化亜鉛単結晶に種々の金属電極を蒸着することによって、ショットキー接合を作製し、界面準位の評価を行った。酸化亜鉛-金接合において良好なショットキー接合が形成されることが示された。結晶の異方性を加味した等温過渡容量分光測定等に使用可能な接合単結晶試料の作製が可能となった。
    分子軌道計算によって酸化亜鉛、及び、ダイヤモンド結晶内の欠陥準位・界面準位について量子論的な考察を行い、分光スペクトルの測定値を計算によって再現することに成功し、欠陥準位についての理解を深めることができた。

    researchmap

  • Atomic Layr Epitaxy and Property of Artificial Superlattice with Perovskite Type Structure

    Grant number:06555183  1994 - 1996

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A)  Grant-in-Aid for Scientific Research (A)

    TSURUMI Takaaki, KAMIYA Toshio, OHASHI Naoki

      More details

    Grant amount:\9300000 ( Direct Cost: \9300000 )

    In the present study, we have developed a fabrication process of BaTiO_3-SrTiO_3 artificial superlattices with Perovskite type structure by molecular beam epitaxy, and analyzed the crystal structure of the superlattices. We have also measured dielectric property of the superlattices. Results of the research are summarized as follows.
    1) BaTiO_3-SrTiO_3 superlattices could be fabricated by atomic layr epitaxy where constituent elements were deposited atomic layr-by-layr using a molecular beam epitaxy technique.
    2) Crystal structure analysis method of artificial superlattice was developed. A software which calculates X-ray diffraction pattern of an artificial superlattice with arbitrary structure was developed and used for structure analysis. It was found calculation and experimental results agreed well by taking into account thermal diffusion of Ba and Sr atoms at interface layr between BaTiO_3 and SrTiO_3.
    3) In order to prevent the thermal diffusion of constituent elements, a low temperature epitaxy of BaTiO_3 on SiTiO_3 substrates was tried. It was found that epitaxial growth was achieved at 400゜C by irradiating low energy oxygen ion beam.
    4) Dielectric property of the artificial superlattice deposited on a conductive SrTiO_3 substrates was measured. Dielectric property was markedly changed with the structure of the superlattices even if the total thickness and chemical composition of the superlattices were identical.

    researchmap

  • Synthesis and growth mechanism of diamond and cubic boron nitride

    Grant number:06403016  1994 - 1996

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A)  Grant-in-Aid for Scientific Research (A)

    FUKUNAGA Osamu, OHASHI Naoki, TSURUMI Takaaki, IKAWA Hiroyuki

      More details

    Grant amount:\29500000 ( Direct Cost: \29500000 )

    On the formation and growth mechanism of diamond and cubic BN carried out in the present study will be summarized.In the present study, we used metal alloy solvents such as Ni, Ni-Ti, Ni-Nb, Fe-B,Fe-Co and Fe-Co-Ti used for diamond synthesis and growth experiments. Alkali and alkaline earth boron nitride compound such as CaLiBN2 was used as solvent for cBN growth.
    Nitrogen, which is a major impurity in diamond, can be eliminated by the addition of getter element such as Ti, Zr and Nb. However, few studies have been reported on the mechanism of the nitrogen gettering. Content of nitrogen in the diamond crystals decreased greatly by adding higher Ti content or growth at higher temperature. The content of nitrogen decreased remarkably when we use Fe-Co Ti alloy as solvent.
    We developed growth method of high pure diamond utilized recrystallization process of diamond on the seed crystal.
    Crystal structure analysis of CaLiBN_2 which used as solvent of cBN growth suggested that Li and N defect are present in the structure and these defects plays possible role of decreasing threshold pressure of the cBN formation.

    researchmap

  • Developments of Composite and Bondiing Materials Prepared by High Pressure Process

    Grant number:05555168  1993 - 1995

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Developmental Scientific Research (B)  Grant-in-Aid for Developmental Scientific Research (B)

    FUKUNAGA Osamu, OHASHI Naoki, KANZAKI Masami

      More details

    Grant amount:\9400000 ( Direct Cost: \9400000 )

    This study was carried out to develop new composite materials which show characteristic properties in both microscopic and macroscopic levels focusing on the high pressure effect to the materials. The composites in this study is defined more broader sense containing amorphous hydroxide compounds prepared at high pressure which forming a microscopic composite by doping water into the structure at high pressure. When high pressure stable diamond or cubic BN particles were dispersed in the matrix, we can prepare macro-composite.
    Micro-composite studied were Sr-Cu-O and La-Sr-Cu-O compounds. These compounds showed high pressure phase transformation and only oxygen doped high pressure phases showed superconductivity. We studied pressure, temperature and composition relationship and doping effect of oxygen to realize superconducting state.
    Diamond and cBN dispersed sintered composite were studied as macro-composite. Evaluation as cutting tool performance was carried out using hardened tool steel work. New TiC dispersed diamond composite was developed.

    researchmap

  • Wide-gap Oxide Semiconductors

      More details

    Grant type:Competitive

    researchmap

  • 酸化物ワイドギャプ半導体

      More details

    Grant type:Competitive

    researchmap

▼display all