2026/08/14 更新

写真a

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HO HOANG HUY
HO HOANG HUY
所属
工学院 助教
職名
助教
外部リンク

学位

  • 工学博士 ( 2025年3月   東京科学大学 )

  • 工学修士 ( 2022年9月   東京工業大学 )

  • Bachelor of Physics Pedagogy ( 2018年6月   Ho Chi Minh University of Education )

研究キーワード

  • Topological insulator

  • Spintronics

  • SOT-MRAM

学歴

  • 東京科学大学

    2022年10月 - 2025年3月

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  • 東京科学大学

    2020年10月 - 2022年9月

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    国名: 日本国

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  • Ho Chi Minh University of Education   Physics   Physics Teaching

    2014年9月 - 2018年6月

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    国名: ベトナム社会主義共和国

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所属学協会

  • IEEE Magnetics Society

    2024年1月 - 現在

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  • Japan Society of Applied Physics

    2022年8月 - 現在

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論文

  • Nonreciprocity of Domain-Wall Motion Induced by Interlayer Dzyaloshinskii–Moriya Interaction

    Kota Sato, Shixuan Liang, Ruiyue Chu, Lei Han, Ho Hoang Huy, Pham Nam Hai, Cheng Song

    Nano Letters   2026年8月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:American Chemical Society (ACS)  

    Abstract

    The Dzyaloshinskii–Moriya interaction (DMI) stabilizes chiral spin textures, making it essential for spintronic devices. Interlayer DMI is an antisymmetric exchange interaction between separated magnetic layers. However, its influence on spin–orbit torque-driven domain wall motion, vital for racetrack-memory devices, remains unclear. Here, we introduce interlayer DMI into Pt/Co/Pt/Ir/Pt/Co/Pt multilayers with synthetic ferromagnetic or antiferromagnetic coupling and examine domain wall motion. Varying the azimuthal angle between the interlayer DMI vector and the current, we demonstrate nonreciprocal domain wall motion: the velocity differs for current parallel versus antiparallel to the DMI vector and depends on domain wall polarity. The nonreciprocity peaks when the DMI vector is parallel or antiparallel to the current, while symmetric motion appears when perpendicular. Micromagnetic simulations confirm it arises from the symmetry-breaking effect of interlayer DMI. These findings show interlayer DMI adds a dimension to domain wall control, offering a design principle for future racetrack-memory devices.

    DOI: 10.1021/acs.nanolett.6c02313

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    その他リンク: https://pubs.acs.org/nalefd/article-pdf/doi/10.1021/acs.nanolett.6c02313/66464803/acs.nanolett.6c02313.pdf

  • Large spin Hall effect in 300 °C annealed BiSb topological insulator and perpendicularly magnetized CoFeB using oxide buffer/seed and interfacial layers on Si/SiO2 substrates

    Pham Van Thuan, Ho Hoang Huy, Wentao Li, Shigeyuki Hirayama, Yushi Kato, Pham Nam Hai

    Applied Physics Letters   128 ( 18 )   2026年5月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:AIP Publishing  

    The application of topological insulator bismuth antimony (BiSb) to spin–orbit torque (SOT)–magnetic random-access memory (MRAM) applications using complementary metal–oxide–semiconductor process demands a high temperature exceeding its melting point. Here, we report an oxide-material engineering solution for sputtered BiSb and CoFeB/MgO junctions on an amorphous Si/SiO2 substrate that can withstand a 300 °C annealing temperature. By utilizing TiOx/TaOx buffer/seed layers and TaOx interfacial layer to protect BiSb during 300 °C annealing, we achieved a large spin Hall angle of 11.1 for BiSb and a strong perpendicular magnetic anisotropy for CoFeB/MgO. Our results provide a viable path toward high-performance BiSb-based SOT–MRAM.

    DOI: 10.1063/5.0320146

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  • High spin Hall angle in BiSb topological insulator and perpendicularly magnetized CoFeB/MgO multilayers with metallic interfacial layers

    Zhang Ruixian, Ho Hoang Huy, Takanori Shirokura, Pham Nam Hai, Quang Le, Brian York, Cherngye Hwang, Xiaoyong Liu, Michael Gribelyuk, Xiaoyu Xu, Son Le, Maki Maeda, Tuo Fan, Yu Tao, Hisashi Takano

    Applied Physics Letters   124 ( 7 )   2024年2月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:AIP Publishing  

    In this study, we investigate the spin Hall effect in heterostructures of Bi0.85Sb0.15 (10 nm) topological insulator/Ru(Ti)/Ta/Co20Fe60B20/MgO with perpendicular magnetic anisotropy. By optimizing the Ru (Ti) interfacial layer thickness as well as deposition condition of BiSb, we achieve a large effective spin Hall angle of 6.0 ± 0.1 and relatively high electrical conductivity of 1.5 × 105 Ω−1 m−1 at room temperature. We, then, demonstrate spin–orbit torque-induced magnetization switching driven by a small threshold current density of 1 × 106 Acm−2. Benchmarking shows that the writing power consumption of our stack is 2–3 orders smaller than that of heavy metals.

    DOI: 10.1063/5.0184870

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  • Integration of BiSb Topological Insulator and CoFeB/MgO With Perpendicular Magnetic Anisotropy Using an Oxide Interfacial Layer for Ultralow Power SOT-MRAM Cache Memory

    Ho Hoang Huy, Zhang Ruixian, Takanori Shirokura, Shigeki Takahashi, Yoshiyuki Hirayama, Pham Nam Hai

    IEEE Transactions on Magnetics   59 ( 11 )   1 - 5   2023年11月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Institute of Electrical and Electronics Engineers (IEEE)  

    DOI: 10.1109/tmag.2023.3275171

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  • Large Spin Hall Angle in Sputtered BiSb Topological Insulator on Top of Various Ferromagnets With In-Plane Magnetization for SOT Reader Application

    H. H. Huy, J. Sasaki, N. H. D. Khang, S. Namba, P. N. Hai, Q. Le, B. York, C. Hwang, X. Liu, M. Gribelyuk, X. Xu, S. Le, R. Nagabhirava, M. Ho, H. Takano

    IEEE Transactions on Magnetics   59 ( 3 )   1 - 4   2023年3月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Institute of Electrical and Electronics Engineers (IEEE)  

    DOI: 10.1109/tmag.2022.3215481

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  • Large inverse spin Hall effect in BiSb topological insulator for 4 Tb/in2 magnetic recording technology

    Ho Hoang Huy, Julian Sasaki, Nguyen Huynh Duy Khang, Shota Namba, Pham Nam Hai, Quang Le, Brian York, Cherngye Hwang, Xiaoyong Liu, Michael Gribelyuk, Xiaoyu Xu, Son Le, Michael Ho, Hisashi Takano

    Applied Physics Letters   122 ( 5 )   2023年1月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:AIP Publishing  

    It is technically challenging to shrink the size of a tunneling magnetoresistance reader to below 20 nm for magnetic recording technology beyond 4 Tb/in2 due to its complex film stack. Recently, we proposed a reader architecture based on the inverse spin Hall effect to resolve those challenges, referred below as spin–orbit torque (SOT) reader, whose structure consists of a SOT layer and a ferromagnetic layer. However, the heavy metal-based SOT reader has small output voltage and low signal-to-noise ratio (SNR) due to the limited spin Hall angle θSH (< 1) of heavy metals. In this Letter, we demonstrate the integration of BiSb topological insulator with strong inverse spin Hall effect into the SOT reader that can significantly improve the output voltage and SNR. First, we theoretically calculate the noises in a 20 × 20 nm2 BiSb-based SOT reader to establish the relationships between SNR and θSH at various bias currents. We then demonstrate proof-of-concept BiSb-based SOT readers using CoFe/MgO/BiSb stack, which show large output voltages up to 15 mV at an input current of 9.4 kA/cm2 at room temperature. We project a giant θSH = 61 for BiSb. Our work demonstrates the potential of BiSb for SOT reader beyond 4 Tb/in2 magnetic recording technology.

    DOI: 10.1063/5.0135831

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  • Improvement of the Effective Spin Hall Angle by Inserting an Interfacial Layer in Sputtered BiSb Topological Insulator (Bottom)/Ferromagnet With In-Plane Magnetization

    J. Sasaki, H. H. Huy, N. H. D. Khang, P. N. Hai, Q. Le, B. York, X. Liu, S. Le, C. Hwang, M. Ho, H. Takano

    IEEE Transactions on Magnetics   58 ( 4 )   1 - 4   2022年4月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Institute of Electrical and Electronics Engineers (IEEE)  

    DOI: 10.1109/tmag.2021.3115169

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  • Low power spin–orbit torque switching in sputtered BiSb topological insulator/perpendicularly magnetized CoPt/MgO multilayers on oxidized Si substrate

    Tuo Fan, Nguyen Huynh Duy Khang, Takanori Shirokura, Ho Hoang Huy, Pham Nam Hai

    Applied Physics Letters   119 ( 8 )   2021年8月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:AIP Publishing  

    Topological insulators (TIs) are promising for efficient spin current sources in spin–orbit torque (SOT) magnetoresistive random access memory (MRAM). However, TIs are usually deposited by molecular beam epitaxy on single crystalline III–V semiconductor or sapphire substrates, which are not suitable for realistic applications. Here, we studied SOT characteristics in sputtered BiSb topological insulator—Pt/Co/Pt—MgO heterostructures deposited on oxidized Si substrates, where Pt/Co/Pt trilayers have a large perpendicular magnetic anisotropy field of 4.5 kOe. We show that the BiSb layer has a large effective spin Hall angle of θSHeff = 2.4 and a high electrical conductivity of σ = 1.0 × 105 Ω−1 m−1. The magnetization can be switched by a small current density of 2.3 × 106 A cm−2 at a pulse width of 100 µs, which is 1 or 2 orders of magnitudes smaller than those in heavy metals. Our work demonstrates the high efficiency and robustness of BiSb as a spin current source in realistic SOT-MRAM.

    DOI: 10.1063/5.0062625

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  • Classical interpretation of dynamics of ultracold atoms in the titled optical lattice

    Vinh N T Pham, Huy H Ho

    Journal of Physics: Conference Series   1506 ( 1 )   012013 - 012013   2020年3月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:IOP Publishing  

    Abstract

    In this paper, we study the dynamics of ultracold 87Rb under the influence of tilted optical lattice via Bloch oscillation in the single-band regime. By simulating the intraband dynamics of wavepacket in position and momentum spaces, the dependences of amplitude and period of the oscillation on tilted coefficient and lattice height are shown and compared with classical theory under tight-binding approximation. We also verify the limit of the single-band approximation where the Landau-Zener transition is neglected.

    DOI: 10.1088/1742-6596/1506/1/012013

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    その他リンク: https://iopscience.iop.org/article/10.1088/1742-6596/1506/1/012013

  • A procedure for high-accuracy numerical derivation of the thermodynamic properties of ideal Bose gases

    Vinh N T Pham, Tran Duong Anh-Tai, Ho Hoang Huy, N Hoang Tung, Nguyen Duy Vy, Tomotake Yamakoshi

    European Journal of Physics   39 ( 5 )   055103 - 055103   2018年7月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:IOP Publishing  

    DOI: 10.1088/1361-6404/aac99c

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    その他リンク: https://iopscience.iop.org/article/10.1088/1361-6404/aac99c/pdf

  • ON THE DERIVATION OF THERMODYNAMIC QUANTITIES OF IDEAL FERMI GAS IN HARMONIC TRAP

    Pham Nguyen Thanh Vinh

    Hue University Journal of Science: Natural Science   126 ( 1B )   117 - 117   2017年7月

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    掲載種別:研究論文(学術雑誌)   出版者・発行元:Hue University  

    In this paper, we provide comprehensive study of the thermodynamic quantities of the ideal Fermi gas confined in a three-dimensional harmonic trap by using the properties of Fermi – Dirac integral function both analytically and numerically. The dependences of the chemical potential, total energy and heat capacity on the temperature are obtained via the appropriately approximated analytic formulae. Afterwards, the results are compared with the exact numerical ones in order to evaluate the applicability of these formulae.

    DOI: 10.26459/hueuni-jns.v126i1b.4116

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産業財産権

  • Spin Orbit Torque Based Thermal Sensor for Insitu Monitoring of Magnetic Recording Head

    Quang Le, Xiaoyong Liu, Brian R. York, Cherngye Hwang, Rohan Babu Nagabhirava, Kuok San Ho, Hisashi Takano, Son T. Le, Nam Hai Pham, Huy H. Ho

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    出願番号:US2024/0240994A1  出願日:2023年7月

    公表日:2024年7月

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  • Magnetoresistive Devices and Semiconductor Devices

    Pham Nam Hai, Ho Hoang Huy, Shigeki Takahashi, Yoshiyuki Hirayama

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    出願番号:特願2023-077596 

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  • Magnetoresistive element and method for manufacturing magnetoresistive element, semiconductor device and method for manufacturing semiconductor devices

    Pham Nam Hai, Ho Hoang Huy, Shigeki Takahashi, Yoshiyuki Hirayama, Yushi Kato

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    出願番号:特願2024-151827 

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受賞

  • Representative of the Doctoral Program Graduates from Department of Electrical and Electronic Engineering

    2025年3月   Institute of Science Tokyo  

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  • Outstanding Master's Thesis Award

    2023年3月   Tokyo Institute of Technology  

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  • Super Smart Society Leadership Scholarship

    2022年10月   Tokyo Institute of Technology  

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  • Advanced Human Resource Development Fellowship

    2022年10月   Tokyo Institute of Technology  

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  • Full Scholarship for Master's Program

    2020年8月   Vingroup Corp.  

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  • Outstanding academic performance and achievement

    2017年9月   Ho Chi Minh University of Education  

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その他

  • Graduate Student Assistant

    2024年1月 - 2025年3月

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    Center of Innovation Teaching and Learning, Institute of Science Tokyo

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