Updated on 2025/10/23

写真a

 
NISHIMURA TAKAHITO
 
Organization
School of Engineering Assistant Professor
Title
Assistant Professor
Homepage
http://solid.pe.titech.ac.jp/index.html
External link

Degree

  • Doctor of Engineering ( Tokyo Institute of Technology )

Research Interests

  • Compound Semiconductor

  • Thin-film solar cells

  • Thin-film solar cells, Compound Semiconductor, Chalcogenide, Crystal growth

  • Crystal growth

  • Chalcogenide

Research Areas

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment  / Electron device/Electronic equipment

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials  / Electronic materials/Electric materials

  • Nanotechnology/Materials / Crystal engineering  / Crystal engineering

Education

  • Tokyo Institute of Technology   Graduate School of Schience and Engineering   Department of Physical Electronics

    - 2018.3

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  • 日本学術振興会リーディング大学院「環境エネルギー協創教育院」

    - 2018.3

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    Country： Japan

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Research History

  • Tokyo Institute of Technology   Department of Electrical and Electronic Engineering, School of Engineering   Assistant Professor

    2022.4

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  • Ritsumeikan University   Assistant Professor

    2018.4 - 2022.3

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  • 日本学術振興会   特別研究員DC2

    2017.4 - 2018.3

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Professional Memberships

  • 太陽光エネルギー変換機能材料・デバイス開発研究会

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  • 多元系化合物・太陽電池研究会

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  • 日本太陽光発電学会

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  • 学際的分野開拓研究会

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  • 応用物理学会

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Committee Memberships

  • 第5回日本太陽光発電学会学術講演会   プログラム委員  

    2025.3 - 2025.7   

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    Committee type：Academic society

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  • PVSEC-35 JJAP特集号編集委員会   委員  

    2024.11 - 2025.9   

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  • AM-FPD'25 プログラム委員会   PVセッション 委員  

    2024.10 - 2025.9   

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  • 第4回日本太陽光発電学会学術講演会   プログラム委員  

    2024.3 - 2024.7   

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  •   PVSEC-35 プログラム委員会, 委員  

    2024.1 - 2025.3   

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  •   AM-FPD'24 プログラム委員会, PVセッション 委員  

    2023.10 - 2024.9   

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  •   PVSEC-33 JJAP特集号編集委員会 委員  

    2022.11 - 2023.9   

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  • AM-FPD'23 プログラム委員会   PVセッション 委員  

    2022.10 - 2023.9   

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  •   PVSEC-35 組織委員会 幹事  

    2022.4 - 2025.3   

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  •   PVSEC-35 総務委員会 委員  

    2022.4 - 2025.3   

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  •   PVSEC-35 運営委員会 幹事  

    2022.4 - 2025.3   

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  • AM-FPD'22 プログラム委員会   PVセッション 委員  

    2021.10 - 2022.9   

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    Committee type：Academic society

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  • PVSEC-33 運営委員会   幹事  

    2021.4 - 2023.3   

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    Committee type：Academic society

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  • PVSEC-33 プログラム委員会   委員  

    2021.4 - 2023.3   

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    Committee type：Academic society

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  • AM-FPD'21 プログラム委員会   PVセッション 委員  

    2020.12 - 2021.9   

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    Committee type：Academic society

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  • 応用物理学会 太陽光エネルギー変換機能材料・デバイス開発研究会   運営幹事  

    2019   

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Papers

  • Structural investigation of the back contact in CIGSe solar cells with Li-doped NiO hole transport layer Reviewed

    Yosuke Abe, Takahito Nishimura, Akira Yamada

    Japanese Journal of Applied Physics   2025.4

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    Publishing type：Research paper (scientific journal)   Publisher：IOP Publishing  

    Abstract

    In recent years, the increase in the conversion efficiency of CIGSe solar cells has plat-eaued, necessitating improvements of back contact properties for further efficiency gains. In this study, we conduct a structural analysis of the back contact to investigate the feasi-bility of applying Li-doped NiO as a hole transport layer in CIGSe solar cells. XRD and AFM analyses demonstrate that CIGSe grown on NiO:Li exhibits crystallinity comparable to that grown on Mo. However, TEM and EDS mapping images of the Mo/NiO:Li/CIGSe structure reveal significant interlayer diffusion, leading to the formation of secondary phases such as GaOx, which are attributed to the high deposition temperature of ≈ 550°C required for the CIGSe layer. To mitigate this issue, a SiO2 barrier layer is introduced, ef-fectively reducing atomic diffusion across the Mo/NiO:Li/CIGSe interfaces and better preserving the back-contact structure.

    DOI： 10.35848/1347-4065/adcbb1

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    Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/adcbb1/pdf

  • Peeling‐Off Process for the Fabrication of Flexible, Lightweight Bifacial Perovskite/Cu(In,Ga)Se2 Tandem Solar Cells Reviewed

    Takahito Nishimura, Chihiro Mizushima, Ryousuke Ishikawa

    Energy Technology   2500020   2025.3

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    Publishing type：Research paper (scientific journal)   Publisher：Wiley  

    In this study, a peeling‐off technique is developed for fabricating flexible, lightweight, and bifacial perovskite/Cu(In,Ga)Se2 (CIGSe) tandem solar cells (TSCs). The process involves forming a perovskite/CIGSe TSC on a glass substrate and then peeling it off. The effectiveness of the proposed process is investigated using a CIGSe single‐junction solar cell. A MoSe2 atomic layer with a c‐axis orientation is observed at the Mo/CIGSe interface, which promotes the peeling‐off process. A flexible, lightweight CIGSe solar cell with a power conversion efficiency (PCE) of 12.3% is fabricated using the peeling‐off technique. The open‐circuit voltage of the flexible solar cell is similar to that of the rigid CIGSe solar cell. Furthermore, a perovskite/CIGSe TSC is fabricated with a PCE of 21.4% on a glass substrate. The TSC exhibited excellent current matching owing to the good match between the energy bandgaps of the perovskite and CIGSe. The proposed technique is used to detach the TSC from the substrate, and NiO and In2O3 transparent back layers are deposited on the peeled CIGSe rear surface. The device exhibits rectification and a PCE of 2.9%. Scanning electron microscopy reveals that the SnO2/C60 and/or C60/perovskite interfaces are peeled off. These results demonstrate that high‐efficiency, flexible, lightweight, and bifacial perovskite/CIGSe TSCs can be fabricated using the proposed technique by controlling adhesion at the device interfaces.

    DOI： 10.1002/ente.202500020

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  • Study of the stacked Cu–Ga/In precursor for Cu(In,Ga)S2 solar cells Reviewed

    Yota Suzuki, Hiromu Kobayashi, Takahito Nishimura, Akira Yamada

    Japanese Journal of Applied Physics   2025.2

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    Publishing type：Research paper (scientific journal)   Publisher：IOP Publishing  

    Abstract

    Wide-bandgap chalcopyrite Cu(In,Ga)S2 (CIGS) solar cell is a promising material because its bandgap is suitable for a top-cell of a tandem solar cell. Highly efficient CIGS solar cells are typically fabricated through the sulfurization of Cu–Ga–In metal precursors. In this study, stacked Cu–Ga/In metal-precursors were prepared with varying the [Ga]/([Ga] + [Cu]) (GGC) ratio ranging from 0 to 0.55. These precursors were analyzed using X-ray diffraction based on the Cu–Ga and Cu–Ga–In phase diagrams. The results confirmed that crystal structures of the metal precursors aligned with predictions from the phase diagrams. Subsequently, CIGS absorbers were fabricated using the stacked Cu–Ga/In precursors through the sulfurization with a sulfur powder source without KCN etching, and their characteristics were thoroughly evaluated. Ultimately, a CIGS solar cell with a conversion efficiency of 10.0% was achieved at a GGC ratio of 0.30 and a CGI ratio of 0.90.

    DOI： 10.35848/1347-4065/adb9ef

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    Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/adb9ef/pdf

  • Impact of Ionic Conduction on Hysteresis and Long-Term Degradation in Perovskite Solar Cells Reviewed

    Ryotaro Fukuda, Takahito Nishimura, Ming-Hsuan Yu, Chu-Chen Chueh, Akira Yamada

    ACS Applied Energy Materials   8 ( 2 )   759 - 766   2025.1

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    Publishing type：Research paper (scientific journal)   Publisher：American Chemical Society (ACS)  

    DOI： 10.1021/acsaem.4c01993

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  • Impacts of O2/(O2+Ar) Flow Ratio on the Properties of Li‐Doped NiO Thin Films Fabricated by Pressure‐Gradient Radiofrequency Magnetron Sputtering

    Yosuke Abe, Takahito Nishimura, Akira Yamada

    physica status solidi (a)   2024.12

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    Publishing type：Research paper (scientific journal)   Publisher：Wiley  

    Herein, Li‐doped NiO thin films are deposited on glass substrates using pressure‐gradient radiofrequency magnetron sputtering, with Ar and O2 as sputtering gases. Following film fabrication, their crystal structures, optical features, and electrical properties are investigated as functions of O2 flow rate to the total flow rate (O2/(O2 + Ar)) of 10 sccm. The deposited films are also annealed at 600 °C for 1 h in an oxygen atmosphere. Notably, the resistivity of the as‐deposited films decreases significantly by three orders of magnitude from 106 to 0.0232 Ω cm when the sputtering gas is changed from pure Ar to pure O2. However, the transmittance decreases with increasing oxygen flow rate. Investigations on the temperature dependence of conductivity reveal hole conduction in the range of ≈320–420 K owing to small polaron hopping.

    DOI： 10.1002/pssa.202400497

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  • Impact of MoSe2 Layer on Carrier Transport at the Back Contact in Cu(In,Ga)Se2 Solar Cells Reviewed

    Yosuke Abe, Takahito Nishimura, Akira Yamada

    IEEE Journal of Photovoltaics   2024.12

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  • Fabrication of In2S3 and In–Ga–S Thin Films via Atmosphere‐Controlled Fine‐Channel Mist Chemical Vapor Deposition

    Akihiro Funaki, Yohei Araki, Takahito Nishimura, Akira Yamada

    physica status solidi (RRL) – Rapid Research Letters   2024.10

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    Publishing type：Research paper (scientific journal)   Publisher：Wiley  

    In the field of thin‐film solar cells, there is a growing need for cadmium‐free buffer layers and fabrication techniques that are both cost‐effective and environmentally friendly. In this study, the deposition of In2S3 and In–Ga–S thin films as alternative buffer layer materials in thin‐film solar cells, using mist chemical vapor deposition (CVD) at atmospheric pressure, is focused on. Indium diethyldithiocarbamate (DTC) and gallium DTC dissolved in dehydrated tetrahydrofuran are used as precursors. The deposited In2S3 demonstrates a wider direct bandgap (Eg‐dir ≈ 2.7 eV) than CdS, showing a potential for reducing parasitic absorption. Introducing a certain amount of gallium into In2S3 induces structural changes, resulting in a wider bandgap material. This bandgap widening primarily lowers electron affinity, making it beneficial for absorber materials with wider bandgap energies. Overall, the In2S3 and In–Ga–S thin films deposited via mist CVD exhibit preferable properties as alternatives to the CdS buffer layer. Moreover, the deposition technique proposed in this study can be adapted for the nonvacuum and cost‐effective deposition of other sulfide materials.

    DOI： 10.1002/pssr.202400258

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  • In2S3 Thin Films via Open‐air Chemical Vapor Deposition Using Indium‐diethyldithiocarbamate: Deposition and Characterization Reviewed

    Akihiro Funaki, Fumiya Furumaki, Takahito Nishimura, Akira Yamada

    physica status solidi (RRL) – Rapid Research Letters   2023.12

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    Publishing type：Research paper (scientific journal)   Publisher：Wiley  

    Cadmium‐free materials for the buffer layer of thin‐film solar cells and their low‐cost manufacturing methods have been of great interest in the solar industry. In this study, we investigated diindium trisulfide (In2S3) as an alternative buffer layer material: In2S3 thin film was deposited at atmospheric pressure utilizing open‐air chemical vapor deposition (CVD). Indium‐diethyldithiocarbamate was used as the only solid precursor. The deposition conditions, crystal structure, optical properties, and electrical properties of In2S3 thin films were studied. The solid source temperature was found to affect the morphology, whereas the substrate temperature affected the growth rate and the sulfur‐to‐indium ratio of the films. X‐ray diffraction and Raman scattering measurements suggested that the prepared films consist of β‐In2S3 and show a strong (103)‐plane orientation under suitable deposition conditions. The films exhibited indirect and direct transitions around 2.0 eV and 2.7–2.8 eV, respectively. The thin films showed n‐type conduction, with the lowest resistivity of 28.6 Ω·cm. Overall, In2S3 thin films prepared via open‐air CVD are promising alternative buffer layer materials, which are expected to contribute to the realization of low‐cost and environmentally friendly thin‐film solar cells.

    This article is protected by copyright. All rights reserved.

    DOI： 10.1002/pssr.202300383

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  • Optimum Electrical and Optical Properties of Transparent Conducting Oxide for Cu(In,Ga)Se2Photovoltaic Module Applications

    Yosuke Abe, Takahito Nishimura, Akira Yamada

    physica status solidi (a)   221 ( 3 )   2023.10

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    Publishing type：Research paper (scientific journal)   Publisher：Wiley  

    Herein, the transparent conducting oxide (TCO) characteristics of the window layer as a factor in the decrease of conversion efficiency from lab‐scale cells to modules are focused on. Then, an optical model and a circuit model are constructed based on measured data, and TCO parameters are investigated to optimize Cu(In,Ga)Se2(CIGS) module characteristics. Simulations assuming ZnO:Al and ZnO:B as the TCO, which are commonly used in CIGS modules with a substrate structure, show that the range of the TCO parameters to obtain high efficiency is limited. In particular, the optimum values of module characteristics are separated into high‐carrier density/thin‐film region with a smooth surface and low‐carrier density/thick‐film region with a textured surface for the TCO layer. In addition, simulations assuming a high‐mobility TCO and a wide‐gap CIGS absorber to boost conversion efficiency reveal that the wide‐gap CIGS absorber mitigates the effects of resistance losses and free carrier absorption due to the TCO, thereby expanding the design range of the carrier density in the TCO layer.

    DOI： 10.1002/pssa.202300641

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  • Mechanism analysis of CuInS2 and Cu(In,Ga)S2 growth via KCN- and H2S-free process and solar-cell application Reviewed

    Yota Suzuki, Dwinanri Egyna, Tomoki Shibata, Takahito Nishimura, Akira Yamada

    Japanese Journal of Applied Physics   62 ( SK )   SK1032 - SK1032   2023.5

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    Publishing type：Research paper (scientific journal)   Publisher：IOP Publishing  

    Abstract

    In this article, CuInS2 (CIS) and Cu(In,Ga)S2 (CIGS) absorbers are prepared via sulfurization by a sulfur powder source for co-evaporated Cu–In(–Ga) metal precursors without toxic KCN and H2S. The CIS and CIGS growth mechanism during sulfurization and their application to solar cells are discussed. X-ray diffraction and Raman spectroscopy analyses indicate that CuS and (In,Ga)2S3 exist at the frontside and the backside, respectively, in the CIGS films at the temperature between 250 °C and 350 °C. Then, these intermediate phases react at 400 °C or higher forming CIGS. Finally, CIS and CIGS solar cells with efficiencies of 3.7% and 7.2% are achieved, utilizing an optimum temperature of 600 °C.

    DOI： 10.35848/1347-4065/accb63

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    Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/accb63/pdf

  • Silver‐Doped Cu2(Sn,Ge)S3 Solar Cells Reviewed

    Tomohiro Ito, Takahito Nishimura, Jakapan Chantana, Abdurashid Mavlonov, Yu Kawano, Takayuki Negami, Takashi Minemoto

    physica status solidi (RRL) – Rapid Research Letters   17 ( 9 )   2300050   2023.5

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    Publishing type：Research paper (scientific journal)   Publisher：Wiley  

    Herein, the usefulness of silver (Ag)‐doping into Cu2(Sn,Ge)S3 (CTGS) solar cells is demonstrated. From an observation via a field emission scanning electron microscope, grain growth promotion of the CTGS thin films by Ag‐doping is revealed. It is found that undesirable defects are suppressed by an adequate Ag‐dopant amount, resulting in reduced nonradiative recombination in photoluminescence spectra for the Ag‐doped CTGS films. For the CTGS solar cell devices, Ag‐doping into the CTGS absorbers mainly improves the short‐circuit current density and open‐circuit voltage. Finally, 3.2%‐efficient Ag‐doped CTGS solar cell is obtained at [Ag]/([Ag] + [Cu]) ratio of 0.05. It is believed that these findings will help to realize the highest efficiency for the CTGS solar cells.

    DOI： 10.1002/pssr.202300050

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  • Development of n-type Zn(O, S) buffer layer deposited by open-air CVD method for Cu(In, Ga)Se2 solar cells Reviewed

    Akihiro Funaki, Fumiya Furumaki, Takahito Nishimura, Akira Yamada

    Japanese Journal of Applied Physics   62 ( SK )   SK1027 - SK1027   2023.4

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    Publishing type：Research paper (scientific journal)   Publisher：IOP Publishing  

    Abstract

    A Zn(O, S) thin-film is deposited utilizing an open-air CVD method by evaporating zinc-diethyldithiocarbamate, which is a non-vacuum and dry process. In an X-ray diffraction measurement, it is revealed that the films have a wurtzite structure and an [O]/([O] + [S]) ratio of 10%. A bandgap energy of 3.1 eV is estimated from the transmittance and reflectance spectra. By applying the Zn(O, S) as an n-type buffer layer, Cu(In, Ga)Se2 solar cells are fabricated. In the current density–voltage characteristics, distortion is observed at the bias voltages above the open-circuit voltage. It is implied that a large conduction band offset exists at a Zn(O, S)/CIGS interface. A quantum efficiency spectrum in the wavelength region of 380–512 nm is improved compared to a traditional CdS buffer layer. Finally, a 9.2%-efficient CIGS solar cell is demonstrated utilizing the Zn(O, S) buffer layer through an all-dry process.

    DOI： 10.35848/1347-4065/acc954

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    Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/acc954/pdf

  • Analysis of EBIC time-variation using 2D simulation including charge states in V Se–V Cu divacancy complex Reviewed

    Ryotaro Fukuda, Shinkai Shimizu, Takahito Nishimura, Akira Yamada

    Japanese Journal of Applied Physics   62 ( SK )   SK1017 - SK1017   2023.4

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    Publishing type：Research paper (scientific journal)   Publisher：IOP Publishing  

    Abstract

    Electron beam induced current (EBIC) measurements have been widely used to investigate charge carrier collection in Cu(In,Ga)Se2 solar cells. However, we found that this electron beam irradiation could significantly change the EBIC signal intensity during the measurement. In this study, the charge state variation of the VSe–VCu divacancy proposed by Lany et al. was introduced into the device simulator to explain the phenomenon. In the simulation, the defects take on three different charged states, i.e. positive, neutral, and negative states, where their transitions are affected by the quasi-Fermi level position in the bandgap. The transient response of the EBIC signal was successfully explained by incorporating these complex state defects.

    DOI： 10.35848/1347-4065/acc7ad

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    Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/acc7ad/pdf

  • Experimental and theoretical EBIC analysis for grain boundary and CdS/Cu (In, Ga)Se2 heterointerface in Cu (In, Ga)Se2 solar cells Reviewed

    Ryotaro Fukuda, Takahito Nishimura, Akira Yamada

    Progress in Photovoltaics: Research and Applications   31 ( 7 )   678 - 689   2023.2

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    Publishing type：Research paper (scientific journal)   Publisher：Wiley  

    Abstract

    The behavior of carriers for an electron‐beam‐induced current (EBIC) evaluation is experimentally and theoretically analyzed for the polycrystalline Cu (In, Ga)Se2 (CIGS) thin‐film solar cells. The experimental EBIC signal in‐depth profiles of the CIGS layers show four features: peaks at grain boundaries (GBs), narrowed peaks near the surface, shifted peaks near the surface, and double peaks at the GBs and surface. Operating principles for CIGS solar cell devices under electron–hole pair excitation are systematically revealed utilizing a two‐dimensional theoretical EBIC simulation: (i) The EBIC peaks at the GBs are caused by a high hole barrier, including a valence band offset (ΔEV) and a band bending at the GBs; (ii) narrowing of EBIC peaks near the surface is caused by high defect densities at the GBs, grading of a conduction band minimum, and grading of acceptor concentration (Na) along with the CIGS depth direction; (iii) a shift in EBIC peaks near the surface is caused by high donor‐like defect densities at the surface; (iv) double peaks at the GBs and surface are caused by a thick surface layer (SL) with the ΔEV and the hole barrier at GBs. These findings of the EBIC analysis will help to comprehensively understand the complex polycrystalline CIGS carrier transport mechanism in realizing the highest‐efficiency CIGS solar cells.

    DOI： 10.1002/pip.3673

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    Other Link： https://onlinelibrary.wiley.com/doi/full-xml/10.1002/pip.3673

  • Growth of Zn‐Ge‐O Thin‐Film as a Transparent Conductive Oxide Buffer Material for Chalcopyrite Solar Cell

    Dwinanri Egyna, Satoru Ito, Takahito Nishimura, Akira Yamada

    Crystal Research and Technology   58 ( 2 )   2200145 - 2200145   2022.12

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    Publishing type：Research paper (scientific journal)   Publisher：Wiley  

    DOI： 10.1002/crat.202200145

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    Other Link： https://onlinelibrary.wiley.com/doi/full-xml/10.1002/crat.202200145

  • Estimation of performance limit for bifacial single-junction solar cell Reviewed

    Jakapan Chantana, Yu Kawano, Takahito Nishimura, Abdurashid Mavlonov, Takashi Minemoto

    Optics & Laser Technology   156   108500 - 108500   2022.12

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    Publishing type：Research paper (scientific journal)   Publisher：Elsevier BV  

    DOI： 10.1016/j.optlastec.2022.108500

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  • P‐Type Nb‐Doped MoS 2 Layer for Solar Cell Application Reviewed

    Takahito Nishimura, Kento Nakaji, Jakapan Chantana, Abdurashid Mavlonov, Yu Kawano, Takayuki Negami, Takashi Minemoto

    physica status solidi (RRL) – Rapid Research Letters   17 ( 2 )   2200236 - 2200236   2022.10

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    Publishing type：Research paper (scientific journal)   Publisher：Wiley  

    DOI： 10.1002/pssr.202200236

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    Other Link： https://onlinelibrary.wiley.com/doi/full-xml/10.1002/pssr.202200236

  • Impacts of 0D Cs4PbI6 phase in all-inorganic CsPbI3 perovskites on their physical, optical properties and photovoltaic performances Reviewed

    Yu Kawano, Atsushi Nakagawa, Jakapan Chantana, Takahito Nishimura, Abdurashid Mavlonov, Takashi Minemoto

    Thin Solid Films   759   139485 - 139485   2022.10

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    Publishing type：Research paper (scientific journal)   Publisher：Elsevier BV  

    DOI： 10.1016/j.tsf.2022.139485

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  • Position Influence of Sputtered Zn1–xMgxO/Zn1–xMgxO:Al Layers in Flexible and Cd-Free Cu(In,Ga)(S,Se)2Solar Cells

    Jakapan Chantana, Yu Kawano, Takahito Nishimura, Abdurashid Mavlonov, Takashi Minemoto

    ACS Applied Materials & Interfaces   14 ( 29 )   34069 - 34080   2022.7

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    Publishing type：Research paper (scientific journal)   Publisher：American Chemical Society (ACS)  

    DOI： 10.1021/acsami.2c07716

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  • Tunable-Conduction-Band In−Zn−O-based Transparent Conductive Oxide Deposited at Room Temperature Reviewed

    Taichi Ishida, Takahito Nishimura, Jakapan Chantana, Abdurashid Mavlonov, Yu Kawano, Takayuki Negami, Takashi Minemoto

    Physica Status Solidi (a) applications and materials science   219 ( 13 )   2200061   2022.5

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  • Derived Conduction Band Offset by Photoelectron Yield Spectroscopy and Its Quantitative Number for Efficiency Enhancement of Flexible, Cd-Free, and All-Dry Process Zn1–xMgxO:Al/Zn1–xMgxO/Cu(In,Ga)(S,Se)2 Solar Cells Reviewed

    Jakapan Chantana, Yu Kawano, Takahito Nishimura, Abdurashid Mavlonov, Takayuki Negami, Takashi Minemoto

    ACS Applied Electronic Materials   4 ( 4 )   2077 - 2085   2022.4

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    Publishing type：Research paper (scientific journal)   Publisher：American Chemical Society (ACS)  

    DOI： 10.1021/acsaelm.2c00227

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  • [Ga]/([Ga]+[In]) profile controlled through Ga flux for performance improvement of Cu(In,Ga)Se2 solar cells on flexible stainless steel substrates Reviewed

    Yu Kawano, Jakapan Chantana, Takahito Nishimura, Abdurashid Mavlonov, Takashi Minemoto

    Journal of Alloys and Compounds   899   163276 - 163276   2022.4

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    Language：English   Publishing type：Research paper (scientific journal)   Publisher：Elsevier BV  

    DOI： 10.1016/j.jallcom.2021.163276

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  • Formation of Native Inx(O,S)y Buffer through Surface Oxidation of Cu(In,Ga)(S,Se)2 Absorber for Significantly Enhanced Conversion Efficiency of Flexible and Cd-Free Solar Cell by All-Dry Process Reviewed

    Jakapan Chantana, Yu Kawano, Takahito Nishimura, Abdurashid Mavlonov, Takayuki Negami, Takashi Minemoto

    Solar RRL   6 ( 7 )   2200250 - 2200250   2022.3

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    Publishing type：Research paper (scientific journal)   Publisher：Wiley  

    DOI： 10.1002/solr.202200250

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    Other Link： https://onlinelibrary.wiley.com/doi/full-xml/10.1002/solr.202200250

  • Gaussian distribution of average photon energy and spectral gain and loss of several-type photovoltaic modules at different outdoor sites around the world Reviewed International journal

    Kota Takeguchi, Jakapan Chantana, Yu Kawano, Takahito Nishimura, and Takashi Minemoto

    Optics Communications   505   127516   2022.2

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1016/j.optcom.2021.127516

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  • 化合物薄膜太陽電池の素子剥離技術と機能開拓 Reviewed

    西村 昂人, 峯元 高志

    応用物理   91 ( 1 )   27 - 31   2022.1

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    Language：Japanese   Publishing type：Research paper (scientific journal)  

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  • Theoretical impacts of single band gap grading of perovskite and valence band offset of perovskite/hole transport layer interface on its solar cell performances Reviewed

    Yu Kawano, Jakapan Chantana, Takayuki Negami, Takahito Nishimura, Abdurashid Mavlonov, Takashi Minemoto

    Solar Energy   231   684 - 693   2022.1

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    DOI： 10.1016/j.solener.2021.11.072

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  • Silver-Alloyed Wide-Gap CuGaSe2 Solar Cells Reviewed International journal

    Takahito Nishimura, Atsuya Doi, Jakapan Chantana, Abdurashid Mavlonov, Yu Kawano, and Takashi Minemoto

    Solar Energy   230   509 - 514   2021.12

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    DOI： 10.1016/j.solener.2021.10.055

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  • Effect of an Ohmic Back Contact on the Stability of Cu(In,Ga)Se2-based Flexible Bifacial Solar Cells Reviewed International journal

    Abdurashid Mavlonov, Takahito Nishimura, Jakapan Chantana, Yu Kawano, and Takashi Minemoto

    Applied Physics Letters   119   103903   2021.9

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    DOI： 10.1063/5.0054235

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  • Accurate estimation of outdoor performance of photovoltaic module through spectral mismatch correction factor under wide range of solar spectrum Reviewed International journal

    Kota Takeguchi, Jakapan Chantana, Koichi Nakayama, Yu Kawano, Takahito Nishimura, Yoshihiro Hishikawa, and Takashi Minemoto

    Current Applied Physics   28   59 - 71   2021.8

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    DOI： 10.1016/j.cap.2021.04.023

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  • Optimized bandgaps of top and bottom subcells for bifacial two-terminal tandem solar cells under different back irradiances Reviewed International journal

    Jakapan Chantana, Yu Kawano, Takahito Nishimura, Abdurashid Mavlonov, and Takashi Minemoto

    Solar Energy   220   163 - 174   2021.5

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    DOI： 10.1016/j.solener.2021.03.034

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  • Device Design for High-performance Bifacial Cu(In,Ga)Se2 Solar Cells under Front and Rear Illuminations Reviewed International journal

    Takahito Nishimura, Jakapan Chantana, Abdurashid Mavlonov, Yu Kawano, Taizo Masuda, and Takashi Minemoto

    Solar Energy   218   76 - 84   2021.4

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    DOI： 10.1016/j.solener.2021.01.075

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  • Impact of Auger recombination on performance limitation of perovskite solar cell Reviewed International journal

    Jakapan Chantana, Yu Kawano, Takahito Nishimura, Abdurashid Mavlonov, Qing Shen, Kenji Yoshino, Satoshi Iikubo, Shuzi Hayase, and Takashi Minemoto

    Solar Energy   217   342 - 353   2021.3

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    DOI： 10.1016/j.solener.2021.02.018

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  • Cathode luminescence analysis of Cu(In,Ga)Se-2 solar cells treated with thiourea solution

    Kazuyoshi Nakada, Takahito Nishimura, Naoki Suyama, Akira Yamada

    JAPANESE JOURNAL OF APPLIED PHYSICS   60 ( 3 )   2021.3

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    DOI： 10.35848/1347-4065/abdf16

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  • Thermodynamic limit of tandem solar cells under different solar spectra and their perovskite top solar cell Reviewed International journal

    Jakapan Chantana, Yu Kawano, Takahito Nishimura, Abdurashid Mavlonov, and Takashi Minemoto

    Optical Materials   113   110819   2021.3

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    DOI： 10.1016/j.optmat.2021.110819

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  • Spectral gain and loss of different-type photovoltaic modules through average photon energy of various locations in Japan Reviewed International journal

    KotaTakeguchi, Koichi Nakayama, Jakapan Chantana, Yu Kawano, Takahito Nishimura, Yoshihiro Hishikawa, and Takashi Minemo

    Solar Energy   214   1 - 10   2021.1

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    DOI： 10.1016/j.solener.2020.10.092

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  • Interfacial Modification Mechanism by Aging Effect for High-performance Cd-free and All-dry Process Cu(In,Ga)(S,Se)2 Solar Cells Reviewed International journal

    Takahito Nishimura, Jakapan Chantana, Yu Kawano, Akira Yamada, Yoshinori Kimoto, Takuya Kato, Hiroki Sugimoto, Takashi Minemoto

    Applied Physics Letters   117   223501   2020.11

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    DOI： 10.1063/5.0031241

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  • Back-Contact Barrier Analysis to Develop Flexible and Bifacial Cu(In,Ga)Se2 Solar Cells Using Transparent Conductive In2O3:SnO2 Thin Films Invited Reviewed International journal

    Abdurashid Mavlonov, Takahito Nishimura, Jakapan Chantana, Yu Kawano, Taizo Masuda, and Takashi Minemoto

    Solar Energy   211   1311 - 1317   2020.11

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    DOI： 10.1016/j.solener.2020.10.077

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  • Superstrate-type Flexible and Bifacial Cu(In,Ga)Se2 Thin-film Solar Cells with In2O3:SnO2 Back Contact Reviewed International journal

    Abdurashid Mavlonov, Jakapan Chantana, Takahito Nishimura, Yu Kawano, Mikiya Inoue, Naoto Hamada, Taizo Masuda, and Takashi Minemoto

    Solar Energy   211   725 - 731   2020.11

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    DOI： 10.1016/j.solener.2020.10.019

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  • Application of Two-Dimensional MoSe2 Atomic Layers to the Lift-Off Process for Producing Light-Weight and Flexible Bifacial Cu(In, Ga)Se2 Solar Cells Reviewed International journal

    Takahito Nishimura, Naoto Hamada, Jakapan Chantana, Abdurashid Mavlonov, Yu Kawano, Taizo Masuda, and Takashi Minemoto

    ACS Applied Energy Materials   3   9504 - 9508   2020.9

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    DOI： 10.1021/acsaem.0c01557

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  • Bismuth-doped Cu(In,Ga)Se2 solar cell on flexible stainless steel substrate: Examination of bismuth-doping effectiveness under different substrate temperatures on photovoltaic performances Reviewed

    Yu Kawano, Jakapan Chantana, Takahito Nishimura, Abdurashid Mavlonov, and Takashi Minemoto

    Solar Energy   208 ( 15 )   20 - 30   2020.9

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    DOI： 10.1016/j.solener.2020.07.076

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  • Zn1-xMgxO second buffer layer of Cu2Sn1-xGexS3 thin-film solar cell for minimizing carrier recombination and open-circuit voltage deficit Reviewed

    Haruki Hayashi, Jakapan Chantana, Yu Kawano, Takahito Nishimura, Abdurashid Mavlonov, and Takashi Minemoto

    Solar Energy   204 ( 1 )   769-776   2020.7

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    DOI： 10.1016/j.solener.2020.05.040

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  • Manipulation of [Ga]/([Ga]+[In]) profile in 1.4-μm-thick Cu(In,Ga)Se2 thin film on flexible stainless steel substrate for enhancing short-circuit current density and conversion efficiency of its solar cell Reviewed

    Yu Kawano, Jakapan Chantana, Takahito Nishimura, Abdurashid Mavlonov, and Takashi Minemoto

    Solar Energy   204 ( 1 )   231-237   2020.7

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    DOI： 10.1016/j.solener.2020.04.069

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  • Impact of Urbach energy on open-circuit voltage deficit of thin-film solar cells Reviewed

    Jakapan Chantana, Yu Kawano, Takahito Nishimura, Abdurashid Mavlonov, and Takashi Minemoto

    Solar Energy Materials and Solar Cells   210 ( 15 )   110502   2020.6

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    DOI： 10.1016/j.solmat.2020.110502

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  • Influence of Ge/(Ge+Sn) composition ratio in Cu2Sn1-xGexS3 thin-film solar cells on their physical properties and photovoltaic performances Reviewed

    Haruki Hayashi, Jakapan Chantana, Yu Kawano, Takahito Nishimura, and Takashi Minemoto

    Solar Energy Materials and Solar Cells   208   110382   2020.5

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    DOI： 10.1016/j.solmat.2019.110382

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  • Mobility improvement of Zn1-xMgxO:Al prepared under room temperature by cosputtering through optimizations of Al and Mg contents Reviewed

    Jakapan Chantana, Yuya Ishino, Yu Kawano, Takahito Nishimura, and Takashi Minemoto

    Materials Science in Semiconductor Processing   109   104921   2020.4

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    DOI： 10.1016/j.mssp.2020.104921

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  • Transparent electrode and buffer layer combination for reducing carrier recombination and optical loss realizing over 22%-efficient Cd-free alkaline-treated Cu(In,Ga)(S,Se)2 solar cell by all-dry process Reviewed

    Jakapan Chantana, Yu Kawano, Takahito Nishimura, Yoshinori Kimoto, Takuya Kato, Hiroki Sugimoto, and Takashi Minemoto

    ACS Applied Materials & Interfaces   12 ( 19 )   22298–22307   2020.4

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    DOI： 10.1021/acsami.0c01980

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  • Theoretical analysis of band alignment at back junction in Sn-Ge perovskite solar cells with inverted p-i-n structure Reviewed

    Takashi Minemoto, Yu Kawano, Takahito Nishimura, Qing Shen, Kenji Yoshino, Satoshi Iikubo, Shuzi Hayase, and Jakapan Chantan

    Solar Energy Materials and Solar Cells   206   110268   2020.3

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    DOI： 10.1016/j.solmat.2019.110268

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  • Description of short circuit current of outdoor photovoltaic modules by multiple regression analysis under various solar irradiance levels Reviewed

    Koichi Nakayama, Masaki Tsuji, Jakapan Chantana, Yu Kawano, Takahito Nishimura, Yoshihiro Hishikawa, and Takashi Minemoto

    Renewable Energy   147 ( 1 )   895-902   2020.3

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    DOI： 10.1016/j.renene.2019.09.083

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  • Investigation of carrier recombination of Na-doped Cu2SnS3 solar cell for its improved conversion efficiency of 5.1% Reviewed

    Jakapan Chantana, Kanta Tai, Haruki Hayashi, Takahito Nishimura, Yu Kawano, and Takashi Minemoto

    Solar Energy Materials and Solar Cells   206   110261   2020.3

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    DOI： 10.1016/j.solmat.2019.110261

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  • Effect of alkali treatment on photovoltaic performances of Cu(In,Ga)(S,Se)2 solar cells and their absorber quality analyzed by Urbach energy and carrier recombination rates Reviewed

    Jakapan Chantana, Yu Kawano, Takahito Nishimura, Yoshinori Kimoto, Takuya Kato, Hiroki Sugimoto, and Takashi Minemoto

    ACS Applied Energy Materials   3 ( 2 )   1292-1297   2020.3

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    DOI： 10.1021/acsaem.9b02293

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  • Improvement of Cu(In,Ga)Se-2 solar cell performance by thiourea treatment

    Kazuyoshi Nakada, Motoki Watanabe, Takahito Nishimura, Naoki Suyama, Akira Yamada

    JAPANESE JOURNAL OF APPLIED PHYSICS   59 ( 3 )   2020.3

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  • Fabrication of flexible and bifacial Cu(In,Ga)Se2 solar cell with superstrate-type structure using a lift-off process Reviewed

    Naoto Hamada, Takahito Nishimura, Jakapan Chantana, Yu Kawano, Taizo Masuda, and Takashi Minemoto

    Solar Energy   199   819-825   2020.3

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    DOI： 10.1016/j.solener.2020.02.084

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  • Influence of halogen content in mixed halide perovskite solar cells on cell performances through device simulation Reviewed

    Yu Kawano, Jakapan Chantana, Takahito Nishimura, and Takashi Minemoto

    Solar Energy Materials and Solar Cells   205   110252   2020.2

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    DOI： 10.1016/j.solmat.2019.110252

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  • 22%-efficient Cd-free Cu(In,Ga)(S,Se)2 solar cell by all-dry process using Zn0.8Mg0.2O and Zn0.9Mg0.1O:B as buffer and transparent conductive oxide layers Reviewed

    Jakapan Chantana, Yu Kawano, Takahito Nishimura, Yoshinori Kimoto, Takuya Kato, Hiroki Sugimoto, and Takashi Minemoto

    Progress in Photovoltaics: Research and Applications   28 ( 1 )   79-89   2020.1

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1002/pip.3210

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  • Aging effect of a Cu(In,Ga)(S,Se)2 absorber on the photovoltaic performance of its Cd-free solar cell fabricated by an all-dry process: its carrier recombination analysis Reviewed

    Jakapan Chantana, Takahito Nishimura, Yu Kawano, Naoki Suyama, Akira Yamada, Yoshinori Kimoto, Takuya Kato, Hiroki Sugimoto, and Takashi Minemoto

    Advanced Energy Materials   9 ( 47 )   1902869   2019.12

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    DOI： 10.1002/aenm.201902869

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  • Urbach energy of Cu(In,Ga)Se2 and Cu(In,Ga)(S,Se)2 absorbers prepared by various methods: Indicator of their quality Reviewed

    Jakapan Chantana, Yu Kawano, Takahito Nishimura, and takashi minemoto

    Materials Today Communications   21   100652   2019.12

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    DOI： 10.1016/j.mtcomm.2019.100652

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  • Application of Al-doped (Zn, Mg)O on pure-sulfide Cu(In, Ga)S2 solar cells for enhancement of open-circuit voltage Reviewed

    Takahito Nishimura, Shinho Kim, Jakapan Chantana, Yu Kawano, Shogo Ishizuka, and Takashi Minemoto

    Solar Energy Materials and Solar Cells   202   110157   2019.11

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    DOI： 10.1016/j.solmat.2019.110157

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  • Examination of relationship between Urbach energy and open-circuit voltage deficit of flexible Cu(In,Ga)Se2 solar cell for its improved photovoltaic performances Reviewed

    Jakapan Chantana, Takahito Nishimura, Yu Kawano, Seiki Teraji, Taichi Watanabe, and Takashi Minemoto

    ACS Applied Energy Materials   2 ( 11 )   7843-7849   2019.10

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    DOI： 10.1021/acsaem.9b01271

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  • Examination of a Cu-Deficient Layer on Cu(In, Ga)Se2 Films Fabricated by a Three-Stage Process for Highly Efficient Solar Cells Reviewed

    Takahito Nishimura, Kazuyoshi Nakada, and Akira Yamada

    ACS Applied Energy Materials   2 ( 7 )   5103-5108   2019.7

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    Language：English   Publishing type：Research paper (scientific journal)  

    DOI： 10.1021/acsaem.9b00774

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  • Characteristics of Zn1−xMgxO:B and its application as transparent conductive oxide layer in Cu(In,Ga)(S,Se)2 solar cells with and without CdS buffer layer Reviewed

    Jakapan Chantana, Yu Kawano, Takahito Nishimura, Takuya Kato, Hiroki Sugimoto, and Takashi Minemoto

    Solar Energy   184   553-560   2019.4

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    DOI： 10.1016/j.solener.2019.04.029

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  • Numerical reproduction of a perovskite solar cell by device simulation considering band gap grading Reviewed

    Takashi Minemoto, Yu Kawano, Takahito Nishimura, and Jakapan Chantana

    Optical Materials   92   60-66   2019.3

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    DOI： 10.1016/j.optmat.2019.03.048

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  • Accurate control and characterization of Cu depletion layer for highly efficient Cu(In,Ga)Se2 solar cells Reviewed

    Takahito Nishimura, Hiroki Sugiura, Kazuyoshi Nakada, and Akira Yamada

    Progress in Photovoltaics: Research and Applications   27 ( 2 )   171-178   2019.2

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    DOI： 10.1002/pip.3077

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  • Characterization of Cd-Free Zn1−xMgxO:Al/Zn1−xMgxO/ Cu(In,Ga)(S,Se)2 Solar Cells Fabricated by an All Dry Process Using Ultraviolet Light Excited Time-Resolved Photoluminescence Reviewed

    Jakapan Chantana, Yu Kawano, Takahito Nishimura, Takuya Kato, Hiroki Sugimoto, and Takashi Minemoto

    ACS Applied Materials & Interface   11   7539-7545   2019.1

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    DOI： 10.1021/acsami.8b19344

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  • Investigation of near-surface material composition of Cu(In,Ga)Se2 film after air exposure and chemical etching for its Cd-free solar cell Reviewed

    Seiki Teraji, Jakapan Chantana, Yu Kawano, Takahito Nishimura, and Takashi Minemoto

    Japanese Journal of Applied Physics   57   121201   2018.10

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    DOI： 10.7567/JJAP.57.121201

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  • Control of Donor Concentration in n-Type Buffer Layer for High-Efficiency Cu(In,Ga)Se2 Solar Cells Reviewed

    Takahiro Hayakawa, Takahito Nishimura, Hiroki Sugiura, Naoki Suyama, Kazuyoshi Nakada, and Akira Yamada

    IEEE JOURNAL OF PHOTOVOLTAICS   8 ( 6 )   1841 - 1846 - 1846   2018.8

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    DOI： 10.1109/JPHOTOV.2018.2865170

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  • Characterization of Interface Between Accurately Controlled Cu-Deficient Layer and Cu(In,Ga)Se2 Absorber for Cu(In,Ga)Se2 Solar Cells Reviewed

    Takahito Nishimura, Hiroki Sugiura, Kazuyoshi Nakada, and Akira Yamada

    Physica Status Solidi RAPID RESEARCH LETTER   12 ( 8 )   1800129   2018.5

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    DOI： 10.1002/pssr.201800129

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  • Effect of Cu-deficient layer formation in Cu(In,Ga)Se2 solar-cell performance

    Takahito Nishimura, Soma Toki, Hiroki Sugiura, Kazuyoshi Nakada, Akira Yamada

    Progress in Photovoltaics: Research and Applications   26 ( 4 )   291 - 302   2018.4

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    DOI： 10.1002/pip.2972

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  • Control of valence band offset of Cu(In, Ga)Se-2 solar cells with single-graded band profile

    Tomohiro Ogihara, Adiyudha Sadono, Takahito Nishimura, Kazuyoshi Nakada, Akira Yamada

    JAPANESE JOURNAL OF APPLIED PHYSICS   56 ( 6 )   062301   2017.6

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    DOI： 10.7567/JJAP.56.062301

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  • Interfacial quality improvement of Cu(In,Ga)Se-2 thin film solar cells by Cu-depletion layer formation

    Takahito Nishimura, Soma Toki, Hiroki Sugiura, Kazuyoshi Nakada, Akira Yamada

    APPLIED PHYSICS EXPRESS   9 ( 9 )   092301   2016.9

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    DOI： 10.7567/APEX.9.092301

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  • Improvement of Cu(In,Ga)Se-2 photovoltaic performance by adding Cu-poor compounds Cu(In,Ga)(3)Se-5 at Cu(In,Ga)Se-2/CdS interface

    Soma Toki, Takahito Nishimura, Hiroki Sugiura, Kazuyoshi Nakada, Akira Yamada

    2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)   512 - 517   2016

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    DOI： 10.1109/PVSC.2016.7749647

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  • Control of valence band offset at CdS/Cu(In,Ga)Se-2 interface by inserting wide-bandgap materials for suppression of interfacial recombination in Cu(In,Ga)Se-2 solar cells

    Takahito Nishimura, Yoshiaki Hirai, Yasuyoshi Kurokawa, Akira Yamada

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 8 )   08KC08   2015.8

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    DOI： 10.7567/JJAP.54.08KC08

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  • Fabrication of Cu(In,Ga)Se-2 solar cells with a single graded band profile

    Takahito Nishimura, Shunsuke Kasashima, Yoshiaki Hirai, Yasuyoshi Kurokawa, Akira Yamada

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   252 ( 6 )   1235 - 1238   2015.6

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    DOI： 10.1002/pssb.201400305

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▼display all

MISC

  • Research Trends and High-Efficiency Technology for Chalcopyrite Solar Cells Invited Reviewed

    Takahito Nishimura

    Journal of the Japan Society of Colour Material   97 ( 5 )   141 - 146   2024.5

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    DOI： 10.4011/shikizai.97.141

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  • Physical and chemical aspects at the interface and in the bulk of CuInSe2-based thin-film photovoltaics Reviewed

    Shogo Ishizuka, Jiro Nishinaga, Kosuke Beppu, Tsuyoshi Maeda, Fuuka Aoyagi, Takahiro Wada, Akira Yamada, Jakapan Chantana, Takahito Nishimura, Takashi Minemoto, Muhammad Monirul Islam, Takeaki Sakurai, Norio Terada

    Physical Chemistry Chemical Physics   2021.12

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    Language：English   Publishing type：Article, review, commentary, editorial, etc. (scientific journal)   Publisher：Royal Society of Chemistry (RSC)  

    Technical issues which remain in CuInSe2-based solar cells are reviewed. A study of single-crystalline Cu(In,Ga)Se2 film devices, carrier recombination analysis, and effects of alkali-metal doping and silver-alloying are particularly focused on.

    DOI： 10.1039/d1cp04495h

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  • A Review of Sb2Se3 Photovoltaic Absorber Materials and Thin-Film Solar Cells Reviewed

    Abdurashid Mavlonov, Takhir Razykov, Fazal Raziq, Jiantuo Gan, Jakapan Chantana, Yu Kawano, Takahito Nishimura, Haoming Wei, Andriy Zakutayev, Takashi Minemoto, Xiaotao Zu, Sean Li, and Liang Qiao

    Solar Energy   201 ( 1 )   227-246   2020.5

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    DOI： 10.1016/j.solener.2020.03.009

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Presentations

  • Deposition of In2S3 thin film via mist-CVD method under a controlled atmosphere

    Akihiro Funaki, Yohei Araki, Takahito Nishimura, Akira Yamada

    35rd International Photovoltaic Science and Engineering Conference (PVSEC-35) 

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    Event date： 2024.11

    Presentation type：Poster presentation  

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  • Study on the deposition process of metal precursors in Cu(In,Ga)S2

    Yota Suzuki, Tomoki Shibata, Hiromu Kobayashi, Takahito Nishimura, Akira Yamada

    35rd International Photovoltaic Science and Engineering Conference (PVSEC-35) 

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    Event date： 2024.11

    Presentation type：Poster presentation  

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  • Development of Li-doped NiO Thin Films for Effective Hole Transport in CIGSe Solar Cells

    Yosuke Abe, Takahito Nishimura, Akira Yamada

    35rd International Photovoltaic Science and Engineering Conference (PVSEC-35) 

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    Event date： 2024.11

    Presentation type：Poster presentation  

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  • Peeling-Off Technique towards Lightweight-Flexible and Bifacial Perovskite/Cu(In,Ga)Se2 Thin-Film Tandem Solar Cells

    Takahito Nishimura, Ryousuke Ishikawa, Yasuaki Ishikawa

    35rd International Photovoltaic Science and Engineering Conference (PVSEC-35)  2024.11 

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    Event date： 2024.11

    Presentation type：Oral presentation (general)  

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  • Hysteresis analysis in;perovskite solar cells by considering ionic conduction

    Ryotaro Fukuda, Takahito Nishimura, Akira Yamada

    35rd International Photovoltaic Science and Engineering Conference (PVSEC-35) 

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    Event date： 2024.11

    Presentation type：Oral presentation (general)  

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  • Device Design for High-Efficient Cu(In,Ga)Se2 Solar Cells utilizing Bayesian Optimization

    Takahito Nishimura, Ryuki Kasai, Akira Yamada

    34rd International Photovoltaic Science and Engineering Conference (PVSEC-34)  2023.11 

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    Event date： 2023.11

    Presentation type：Poster presentation  

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  • Development of In2S3 buffer layer for Cu(In,Ga)Se2 solar cells by open-air CVD method

    Akihiro Funaki, Fumiya Furumaki, Takahito Nishimura, Akira Yamada

    34rd International Photovoltaic Science and Engineering Conference (PVSEC-34)  2023.11 

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    Presentation type：Oral presentation (general)  

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  • Systematic Analysis of Ag Addition Effects on Bulk and Interface Properties in CIGSe Solar Cells

    Yosuke Abe, Ryotaro Fukuda, Takahito Nishimura, Akira Yamada

    34rd International Photovoltaic Science and Engineering Conference (PVSEC-34)  2023.11 

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    Event date： 2023.11

    Presentation type：Oral presentation (general)  

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  • Theoretical and Experimental Optimization of Back Junction for Cu(In,Ga)Se2 Solar Cells

    Takahito Nishimura, Yosuke Abe, Akira Yamada

    40th European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC)  2023.9 

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    Event date： 2023.9

    Language：English   Presentation type：Oral presentation (general)  

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  • Analysis of EBIC time variation with VSe–VCu vacancy complex

    Ryotaro Fukuda, Shinkai Shimizu, Takahito Nishimura, Akira Yamada

    40th European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC)  2023.9 

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    Event date： 2023.9

    Language：English   Presentation type：Oral presentation (general)  

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  • Analysis of EBIC time-variation using 2D simulation including charge states in VSe-VCu divacancy complex

    Ryotaro Fukuda, Shinkai Shimizu, Takahito Nishimura, Akira Yamada

    33rd International Photovoltaic Science and Engineering Conference (PVSEC-33)  2022.11 

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    Event date： 2022.11

    Language：English   Presentation type：Oral presentation (general)  

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  • Development of n-type ZnS buffer layer deposited by atmospheric pressure MOCVD method for Cu(In,Ga)Se2 solar cells

    Akihiro Funaki, Fumiya Furumaki, Takahito Nishimura, Akira Yamada

    33rd International Photovoltaic Science and Engineering Conference (PVSEC-33)  2022.11 

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    Event date： 2022.11

    Language：English   Presentation type：Oral presentation (general)  

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  • Optimum Back Junction utilizing P-Type MoSe2:Nb Layer for Cu(In,Ga)Se2 Solar Cells

    Takahito Nishimura, Akira Yamada

    33rd International Photovoltaic Science and Engineering Conference (PVSEC-33)  2022.11 

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    Event date： 2022.11

    Language：English   Presentation type：Poster presentation  

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  • Zn-Ge-O thin-films as alternative n-type layers for chalcogenide solar cells

    Dwinanri Egyna, Satoru Ito, Takahito Nishimura, Akira Yamada

    33rd International Photovoltaic Science and Engineering Conference (PVSEC-33)  2022.11 

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    Event date： 2022.11

    Language：English   Presentation type：Poster presentation  

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  • Growth mechanism and fabrication of pure sulfide CuIn(Ga)S2 solar cell by sulfurization

    Yota Suzuki, Dwinanri Egyna, Tomoki Shibata, Takahito Nisimura, Akira Yamada

    33rd International Photovoltaic Science and Engineering Conference (PVSEC-33)  2022.11 

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    Event date： 2022.11

    Language：English   Presentation type：Poster presentation  

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  • (Invited) Application of Transition Metal Dichalcogenides for Chalcopyrite Solar Cells Invited

    Takahito Nishimura

    242nd ECS Meeting  2022.10 

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    Event date： 2022.10

    Language：English   Presentation type：Oral presentation (invited, special)  

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  • (Invited) Production Techniques for Flexible-Lightweight Cu(In,Ga)Se2 Solar Cells Invited International conference

    Takahito Nishimura, Abdurashid Mavlonov, Jakapan Chantana, Yu Kawano, Takayuki Negami, and Takashi Minemoto

    The 11th International Conference on Flexible and Printed Electronics (ICFPE 2021)  2021.9 

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    Event date： 2021.9 - 2021.10

    Language：English   Presentation type：Oral presentation (invited, special)  

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  • Peeling Technique by Two-Dimensional MoSe2 Atomic Layer for Bifacial-Flexible Cu(In,Ga)Se2 solar cells International conference

    Takahito Nishimura, Abdurashid Mavlonov, Jakapan Chantana, Yu Kawano, and Takashi Minemoto

    The 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD'21)  2021.6 

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    Event date： 2021.6 - 2021.7

    Language：English   Presentation type：Oral presentation (general)  

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  • Modification Technique of Back Junction for Cu(In,Ga)Se2 Solar Cells

    Takahito Nishimura, Akira Yamada

    41th European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC)  2024.9 

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  • Fabrication of Cu(In,Ga)Se2 solar cells with a single graded band profile International conference

    T. Nishimura, S. Kasashima, Y. Hirai, Y. Kurokawa, and A. Yamada

    International Conference on Ternary and Multinary Compounds (ICTMC-19)  2014.9 

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    Language：English   Presentation type：Oral presentation (general)  

    Venue：Nigata, Japan  

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  • (招待講演)Cu(InGa)Se2薄膜太陽電池の価電子帯制御による界面再結合抑制効果の理論及び実験的検証

    第62回応用物理学会春季学術講演会  2015.3 

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    Language：Japanese   Presentation type：Oral presentation (invited, special)  

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  • Improving efficiency of Cu(In,Ga)Se2 solar cells by inserting Cu(InGa)3Se5 interface layer International conference

    T. Nishimura, Y. Hirai, Y. Kurokawa, and A. Yamada

    7th International Symposium on Innovative Solar Cells  2015.1 

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    Language：English   Presentation type：Poster presentation  

    Venue：Tokyo, Japan,  

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  • Influence by Inserting Wide-gap Material at CdS/Cu(In,Ga)Se2 Interface for Cu(In,Ga)Se2 Solar Cells International conference

    T. Nishimura, Y. Hirai, Y. Kurokawa, and A. Yamada

    The Third International Education Forum on Environment and Energy Science  2014.12 

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    Language：English   Presentation type：Oral presentation (general)  

    Venue：Perth, Australia  

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  • Suppression of Recombination at a CdS/CIGS Interface by Inserting Cu(In,Ga)3Se5 for Cu(In,Ga)Se2 Solar Cells International conference

    T. Nishimura, Y. Hirai, Y. Kurokawa, and A. Yamada

    The 6th World Conference on Photovoltaic Energy Convension (6th-WCPEC)  2014.11 

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    Language：English   Presentation type：Oral presentation (general)  

    Venue：Kyoto, Japan  

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  • Interfacial Control by Introducing Se-interval Time during Growth of Cu(In,Ga)Se2 for Performance Enhancement of Cu(In,Ga)Se2 Solar Cells International conference

    T. Nishimura, S. Toki, H. Sugiura, K. Nakada, and A. Yamada

    The Fifth International Education Forum on Environment and Energy Science  2016.12 

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    Language：English   Presentation type：Oral presentation (general)  

    Venue：California, USA  

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  • Realization of High Performance Cu(In,Ga)Se2 solar cell by Interfacial Control International conference

    T. Nishimura, H. Sugiura, and A. Yamada

    Honda Y-E-S Forum 2016  2016.11 

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    Language：English   Presentation type：Oral presentation (general)  

    Venue：Tokyo, Japan  

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  • Interface-quality Improvement by Controlling Cu(2-x)Se layer in Three-stage Method for High Efficiency Cu(In, Ga)Se2 Solar Cells International conference

    T. Nishimura, S. Toki, H. Sugiura, K. Nakada, and A. Yamada

    26th International Photovoltaic Science and Engineering Conference (PVSEC-26)  2016.10 

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    Language：English   Presentation type：Oral presentation (general)  

    Venue：Bayfront Avenue, Singapore  

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  • Structural, Electrical, and Compositional Analysis of Surface and Grain Boundary for Cu(In,Ga)Se2 Solar Cells by EBSD/SSRM/TEM-EDX International conference

    T. Nishimura, S. Toki, H. Sugiura, K. Nakada, and A. Yamada

    20th International Conference on Ternary and Multinary Compounds (ICTMC-20)  2016.9 

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    Language：English   Presentation type：Oral presentation (general)  

    Venue：Halle, Germany  

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  • Improvement of Cu(In,Ga)Se2 photovoltaic performance by adding Cu-poor compounds Cu(In,Ga)3Se5 at Cu(In,Ga)Se2/CdS interface International conference

    S. Toki, T. Nishimura, H. Sugiura, K. Nakada, and A. Yamada

    THE 43rd IEEE Photovoltaic Specialists Conference  2016.6 

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    Language：English   Presentation type：Oral presentation (general)  

    Venue：Poland, USA  

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  • Surface and Grain Boundary Improvement by Valence Band Control for High Efficiency Cu(In,Ga)Se2 thin-film Solar cells International conference

    T. Nishimura, S. Toki, and A. Yamada

    The Fourth International Education Forum on Environment and Energy Science  2015.12 

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    Language：English   Presentation type：Oral presentation (general)  

    Venue：Hawaii, USA  

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  • Theoretical and Experimental Investigation of the Recombination Reduction at CdS/Cu(In,Ga)Se2 Interface by Valence and control International conference

    T. Nishimura, Y. Hirai, Y. Kurokawa, and A. Yamada

    2015 MRS Spring Meeting & Exhibit  2015.4 

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    Venue：San Francisco, USA  

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  • Experimental Investigation of Cd- and Zn-diffusion Effect for Cu(In,Ga)Se2 Solar cells with Cu-poor Layer International conference

    H. Sugiura, T. Nishimura, K. Nakada, and A. Yamada

    27th International Photovoltaic Science and Engineering Conference (PVSEC-27)  2017.11 

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    Language：English   Presentation type：Oral presentation (general)  

    Venue：Otsu City Shiga, Lake Biwa Otsu Prince Hotel, Japan  

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  • Mechanism of Efficiency Enhancement of Cu(In,Ga)Se2 solar cells by Insertion of Cu-deficient Layer in solar cell performances International conference

    T. Nishimura, S. Toki, H. Sugiura, K. Nakada, and A. Yamada

    33rd European Photovoltaic Solar Energy Conference and Exhibition (EU-PVSEC2017)  2017.9 

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    Language：English   Presentation type：Oral presentation (general)  

    Venue：Amsterdam, Netherlands  

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  • Fabrication of 4 terminal perovskite//CIGS tandem solar cell using optical splitting method International conference

    K. Nakada, T. Nishimura, Y. Numata, T. Miyasaka, and A. Yamada

    International Conference Asia-Pacific Hybrid and Organic Photovoltaics (AP-HOPV17)  2017.2 

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    Language：English   Presentation type：Oral presentation (general)  

    Venue：Yokohama, Japan  

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  • Application of (Zn, Mg)O Buffer Layer in Cu2(Sn, Ge)S3 Solar Cell to Enhance Open-circuit Voltage International conference

    Haruki Hayashi, Takahito Nishimura, Jakapan Chantana, Yu Kawano, and Takashi Minemoto

    29th International Photovoltaic Science and Engineering Conference (PVSEC29)  2019.11 

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    Language：English   Presentation type：Poster presentation  

    Venue：Xi'an, Shaanxi, China  

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  • Open-circuit Voltage Enhancement for Cu(In, Ga)S2 Solar Cells by Applying Al-doped (Zn,Mg)O Layer International conference

    Takahito Nishimura, Shinho Kim, Jakapan Chantana, Yu Kawano, Shogo Ishizuka, and Takashi Minemoto

    29th International Photovoltaic Science and Engineering Conference (PVSEC29)  2019.11 

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    Language：English   Presentation type：Poster presentation  

    Venue：Xi'an, Shaanxi, China  

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  • (招待講演)カルコパイライト型半導体太陽電池のヘテロ接合界面制御技術

    2019年度半導体エレクトロニクス部門委員会 第1回研究会  2019.7 

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    Language：Japanese   Presentation type：Oral presentation (invited, special)  

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  • Interfacial analysis via lift-off process for Cu(In,Ga)Se2 solar cells International conference

    Takahito Nishimura, Mikiya Inoue, Atsuya Doi, Jakapan Chantana, and Takashi Minemoto

    International Symposium on Solar Energy Materials  2019.1 

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    Language：English   Presentation type：Poster presentation  

    Venue：iCommons, Konan University, Japan  

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  • Mimicking perovskite solar cells by device simulation considering band gap grading International conference

    Takashi Minemoto, Jakapan Chantana, Yu Kawano, Takahito Nishimura

    7th Korea-Japan Joint Seminar on PV  2018.11 

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  • Back surface characterization for lift-off Cu(In,Ga)Se2 solar cells International conference

    T. Nishimura, M. Inoue, A. Doi, J. Chantana, and T. Minemoto.

    7th Korea-Japan Joint Seminar on PV  2018.11 

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    Language：English   Presentation type：Poster presentation  

    Venue：Seoul, Korea  

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  • Micor-scale current path distribution of SnO2:F transparent electrode and ZnO based electron transport layer in perovskite solar cells International conference

    T. Minemoto, J. Chantana, T. Hirayama, Y. Kawano, T. Nishimura, Q. Shen, K. Yoshino, and S. Hayase

    GRAND RENEWABLE ENERGY 2018  2018.6 

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    Language：English   Presentation type：Poster presentation  

    Venue：Pacifico Yokohama, Japan  

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  • Analysis of potential distribution to reduce currier recombination in CH3NH3PbI3 based solar cells by device simulation International conference

    T. Minemoto, Y. Kawano, and T. Nishimura.

    GRAND RENEWABLE ENERGY 2018  2018.6 

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    Language：English   Presentation type：Poster presentation  

    Venue：Pacifico Yokohama, Japan  

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  • Impact of Alkali Treatment in Cu(In, Ga)(S, Se)2 on Its Quality and Carrier Recombination International conference

    Jakapan Chantana, Yu Kawano, Takahito Nishimura, Yoshinori Kimoto, Takuya Kato, Hiroki Sugimoto, and Takashi Minemoto

    29th International Photovoltaic Science and Engineering Conference (PVSEC29)  2019.11 

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    Language：English   Presentation type：Oral presentation (general)  

    Venue：Xi'an, Shaanxi, China  

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  • Optimum Back Contact for Flexible and Bifacial CIGS Solar Cells Fabricated by Lift-off Process International conference

    Naoto Hamada, Mikiya Inoue, Taizo Masuda, Takahito Nishimura, Yu Kawano, Jakapan Chantana, and Takashi Minemoto

    29th International Photovoltaic Science and Engineering Conference (PVSEC29)  2019.11 

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    Language：English   Presentation type：Poster presentation  

    Venue：Xi'an, Shaanxi, China  

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  • Development of Lift-off Process using Layered-Grown MoSe2 Atomic Film for Lightweight and Flexible Bifacial Cu(In,Ga)Se2 Solar Cells International conference

    T. Nishimura, N. Hamada, J. Chantana, A. Mavlonov, Y. Kawano, T. Masuda, and T. Minemoto

    30th International Photovoltaic Science and Engineering Conference (PVSEC30)  2020.11 

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    Language：English   Presentation type：Oral presentation (general)  

    Venue：Jeju, Republic of Korea  

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  • Improvement of interface quatilty of Cd-free Cu(In,Ga)(S,Se)2 solar cell by all-dry process through aged absorber Invited International conference

    J. Chantana, T. Nishimura, Y. Kawano, Y. Kimoto, T. Kato, H. Sugimoto, and T. Minemoto

    30th International Photovoltaic Science and Engineering Conference (PVSEC30)  2020.11 

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    Language：English   Presentation type：Oral presentation (invited, special)  

    Venue：Jeju, Republic of Korea  

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  • Flexible And Bifacial Cu(In,Ga)Se2 Solar Cells With In2O3:SnO2 Back Contact International conference

    A. Mavlonov, T. Nishimura, J. Chantana, Y. Kawano, T. Masuda, and T. Minemoto

    30th International Photovoltaic Science and Engineering Conference (PVSEC30)  2020.11 

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    Language：English   Presentation type：Oral presentation (general)  

    Venue：Jeju, Republic of Korea  

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  • Effect of Br/(I+Br) ratio in perovskite absorber on cell performance by device simution International conference

    Y. Kawano, J. Chantana, T. Nishimura, A. Mavlonov, and T. Minemoto

    30th International Photovoltaic Science and Engineering Conference (PVSEC30)  2020.11 

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    Language：English   Presentation type：Poster presentation  

    Venue：Jeju, Republic of Korea  

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  • Advancing CIGSe Solar Cell Efficiency Under Low-Temperature Deposition via Ag Additives

    Yosuke Abe, Takahito Nishimura, Akira Yamada

    The 32nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD'25)  2025.7 

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  • Device Characterization via Transient Model Involving VCu–VSe Complex for Cu(In,Ga)Se2 Solar Cells

    Takahito Nishimura, Ryotaro Fukuda, Akira Yamada

    42th European Photovoltaic Solar Energy Conference and Exhibition (EUPVSEC)  2025.9 

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Awards

  • 令和6年度柏木孝夫GXI賞「GX 奨励賞」

    2025.3  

    西村 昂人

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  • 令和6年度工学院若手奨励賞

    2024.10   東京科学大学  

    西村 昂人

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  • 第34回安藤博記念学術奨励賞

    2021.6   一般財団法人安藤研究所  

    西村 昂人

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    Award type：Award from publisher, newspaper, foundation, etc.  Country：Japan

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  • AM-FPD '21 Best Paper Award

    2021.6   The 28th International Workshop on Active-Matrix Flatpanel Displays-TFT Technologies and FPD Materials- (AM-FPD'21)   Peeling Technique by Two-Dimensional MoSe2 Atomic Layer for Bifacial-Flexible Cu(In,Ga)Se2 solar cells

    Takahito Nishimura, Abdurashid Mavlonov, Jakapan Chantana, Yu Kawano, Takashi Minemoto

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  • 第16回「次世代の太陽光発電システム」シンポジウム Innovative-PV奨励賞

    2019.7   日本学術振興会 産学協力研究委員会 第175委員会  

    西村 昂人

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    Award type：Award from Japanese society, conference, symposium, etc.  Country：Japan

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  • 平成30年度 手島精一記念研究賞 博士論文賞

    2019.2   東京工業大学  

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    Country：Japan

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  • 第37回 応用物理学会講演奨励賞

    2014.9   公益社団法人応用物理学会  

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Research Projects

  • 光透過機能を有した高品質ヘテロ界面形成技術と太陽電池応用

    2024.8 - 2025.6

    公益財団法人 村田学術振興・教育財団  第40回（2024年度）研究助成 

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  • 35th International Photovoltaic Science and Engineering Conference (PVSEC-35)

    2024.8 - 2025.6

    第40 回(2024 年度) 公益財団法人 村田学術振興・教育財団 研究会（学会）助成 

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  • 高効率カルコゲナイド系化合物薄膜熱電材料の開発

    2023.1 - 2023.12

    公益財団法人JFE21世紀財団  2022年度･技術研究助成 

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    Authorship：Principal investigator 

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  • 擬単結晶化合物発電層の創製および高靭性を有す太陽電池設計と曲げ特性の理解

    Grant number：22H01531  2022.4 - 2026.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)  Grant-in-Aid for Scientific Research (B)

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    Authorship：Principal investigator 

    Grant amount：\18070000 （ Direct Cost: \13900000 、 Indirect Cost：\4170000 ）

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  • タンデム型水素発生デバイスを志向した高性能半透明光アノードの開発

    2021.4 - 2022.9

    公益財団法人加藤科学振興会  令和3年度第30回研究助成金 

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    Authorship：Principal investigator  Grant type：Competitive

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  • 有機薄膜を用いた太陽光発電システムの設置及び他社製シリコン太陽電池や薄膜太陽電池との性能比較とシミュレーション評価

    2020.6 - 2021.9

    株式会社Looop  受託研究 

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    Grant type：Collaborative (industry/university)

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  • 多接合太陽電池を指向した剥離ー再接合可能かつ最適禁制帯幅を有す化合物発電層の創出

    Grant number：20K14780  2020.4 - 2023.3

    日本学術振興会  科学研究費助成事業 若手研究  若手研究

    西村 昂人

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    Authorship：Principal investigator 

    Grant amount：\4290000 （ Direct Cost: \4290000 ）

    多接合型太陽電池用Cu(In,Ga)Se2(CIGS)系トップセルの実現に向けて、(1)禁制帯幅1.65eVのCIGS系発電層の高品質化、および(2)ガラス基板上CIGS太陽電池の素子剥離法の開発を実施した。
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    （１）トップセルとして利用できる禁制帯幅1.65eVを有したCuGaSe2発電層の高品質化に向けて、Ag添加による薄膜結晶品質の検証に取組んだ。Agを添加することで、不十分な結晶成長に伴う未反応のCa2Se3異相を抑制できることが明らかとなった。また、再結合中心となり得る欠陥準位の低減と共に、25.5 meVから21.1 meVまでアーバックエネルギーが減少することを見出した。電子顕微鏡法を用いて、Agが添加されたCuGaSe2結晶粒の観察を行ったところ、Ag添加量に伴って結晶粒径が大幅に増大することが分かった。Ag添加技術が、トップセル発電層材料として有望なCuGaSe2発電層の高品質化に有効であることを示した。
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    （２）多接合型太陽電池用CIGS系トップセルの開発を目的として素子剥離技術の開発を実施した。従来のガラス基板上で作製されるCIGS太陽電池のMo裏面電極とCIGS発電層との接合界面において、二次元層状物質として知られるMoSe2を層状成長（c軸配向）させることで、MoSe2 原子層間の弱いファンデルワールス力により適切な界面密着性を実現し、容易に素子剥離できることが分かった。CIGS太陽電池を剥離し、剥離後の電池特性を評価したところ、剥離前の変換効率と比較して95%の高い性能保持率を得ることができた。さらに、多接合型太陽電池のトップセル応用を想定して、ボトムセルで吸収するための長波長光を透過できる、半透明なCIGS太陽電池の素子構造についても検討を行った。剥離後のCIGS太陽電池において、裏面透明電極として酸化インジウム・スズ(ITO)を積層した結果、変換効率10.4%の半透明構造を有するフレキシブルなCIGSトップセルの動作実証に至った。

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  • 急速冷却技術を用いた解析による半導体薄膜材料の高品質化と太陽電池への応用

    2020.4 - 2022.3

    公益財団法人東電記念財団 2019年度研究助成金 

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    Authorship：Principal investigator  Grant type：Competitive

    Grant amount：\1000000 （ Direct Cost: \1000000 ）

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  • 化合物薄膜太陽電池の高性能化に関する研究

    2019.4 - 2020.3

    日本私立学校振興・共済事業団 2019年度若手研究者奨励金 

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    Authorship：Principal investigator  Grant type：Competitive

    Grant amount：\400000 （ Direct Cost: \400000 ）

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  • 高効率太陽電池を志向した広禁制帯幅を有する化合物半導体結晶成長メカニズムの解明

    2019.4 - 2020.3

    公益財団法人岩谷直治記念財団 2018年度岩谷科学技術研究助成 

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    Authorship：Principal investigator  Grant type：Competitive

    Grant amount：\2000000 （ Direct Cost: \2000000 ）

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  • 化合物半導体のスピノーダル分解の実験的検証とナノ構造制御

    2018.10 - 2019.9

    公益財団法人泉科学振興財団 2018年度研究助成金 

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    Authorship：Principal investigator  Grant type：Competitive

    Grant amount：\1000000 （ Direct Cost: \1000000 ）

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  • カルコパイライト構造化合物薄膜太陽電池の性能向上に向けた新規界面制御技術の開発

    Grant number：17J09890  2017.4 - 2019.3

    日本学術振興会  科学研究費助成事業 特別研究員奨励費  特別研究員奨励費

    西村 昂人

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    Authorship：Principal investigator 

    Grant amount：\1900000 （ Direct Cost: \1900000 ）

    本研究では、カルコパイライト型構造Cu(In,Ga)Se2(CIGS)薄膜太陽電池の高効率化に向け、CIGS 表面にCu 欠損層(Cu欠損状態のCIGS)を導入することにより積極的に価電子帯不連続を形成し、n型CdSバッファ層とp型CIGS光吸収層とのヘテロ接合界面におけるキャリア再結合を抑制することを目的とした。本年度は、CIGS上の(1)Cu欠損層形成メカニズムの解明、及び(2)Cu欠損層の精密制御技術の確立を試みた。
    (1)申請者は、多元同時蒸着法によるCIGS結晶の成長過程において、一時的に偏析するCu2Se異相が最終的なCu欠損層の起源となると考えた。これを実証するため、CIGS成長の途中段階でCu2Se異相にSeの供給を行い、途中で成膜を止めて薄膜断面の観察を行った。その結果、Se供給無し場合、CIGS表面のCu2Se異相は不均一に形成される一方で、Se供給有りの場合、異相がCIGS表面に薄く均一に形成されることを見出した。また、完成後のCIGS表面の組成分析を行った結果、Se供給有りの場合、全表面領域に亘って均一にCu欠損層が形成されることを明らかにした。以上の結果を基に、Cu2SeがSe過剰・Cu欠損状態のCu2-xSeとなった際に、これが起源となりCu欠損層へと変化する、というCu欠損層の成長モデルを構築した。
    (2)Cu欠損層の成長モデルを基にCu欠損層の精密制御技術の開発を行った。CIGS成長過程において「Se照射プロセス」を導入し、積極的にCu2-xSeの組成制御を施した。Se照射プロセスを5分導入することにより、CIGS上に厚さ200nmの均一なCu欠損状態が形成され、Cu欠損層の制御が可能であることを明らかにした。
    実際にSe照射プロセス5分を導入し、CIGS太陽電池を試作したところ、19.8%の世界最高レベルの変換効率を達成した。

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Teaching Experience

  • 電気電子工学実験I

    Institution：立命館大学

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  • 物理学演習I

    Institution：立命館大学

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