Updated on 2025/10/03

写真a

 
HIRAMATSU HIDENORI
 
Organization
Institute of Integrated Research Materials and Structures Laboratory Professor
Title
Professor
Homepage
https://www.hiramatsu.msl.iir.isct.ac.jp/
External link

News & Topics

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Degree

  • Ｅngineering ( 2004.3   Tokyo Institute of Technology )

Research Areas

  • Nanotechnology/Materials / Inorganic compounds and inorganic materials chemistry

Papers

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MISC

  • Fabrication, characterization, and modulation of functional nanolayers Invited

    Hiromichi Ohta, Hidenori Hiramatsu

    Nanoinformatics   207 - 235   2018.1

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    Language：English   Publisher：Springer Singapore  

    DOI： 10.1007/978-981-10-7617-6_10

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Presentations

  • Thin-film Growth of 1111-type Iron-based Superconductors Invited

    H. Hiramatsu, H. Hosono

    Iron-based Superconductors: Advances towards applications 2025 (IBS2app 2025)  2025.2 

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    Event date： 2025.2

    Language：English   Presentation type：Oral presentation (invited, special)  

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Research Projects

  • オキシカルコゲナイドの欠陥学理の構築とワイドギャップ半導体の設計・開拓への展開

    Grant number：24H00376  2024.4 - 2028.3

    日本学術振興会  科学研究費助成事業  基盤研究(A)

    大場 史康, 平松 秀典, 高橋 亮

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    Grant amount：\47580000 （ Direct Cost: \36600000 、 Indirect Cost：\10980000 ）

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  • Construction of innovatively novel optical semiconductors based on the original chemical design concept, and evolution of their devices

    Grant number：21H04612  2021.4 - 2026.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

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    Grant amount：\41730000 （ Direct Cost: \32100000 、 Indirect Cost：\9630000 ）

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  • ワイドギャップ半導体におけるケミカルドーピングの学理構築と新材料開拓

    Grant number：20H00302  2020.4 - 2025.3

    日本学術振興会  科学研究費助成事業  基盤研究(A)

    大場 史康, 野瀬 嘉太郎, 高橋 亮, 平松 秀典

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    Grant amount：\44590000 （ Direct Cost: \34300000 、 Indirect Cost：\10290000 ）

    ハイスループット第一原理計算とその物性データの機械学習により、無機化合物における固有点欠陥の形成挙動・電子状態と様々な形態でのドーパント添加によるキャリアドーピングの有効性を、半導体としての応用に関わる種々の基礎物性と併せて俯瞰的に考察し、ワイドギャップ半導体の設計・探索の指針を構築することを最終目的として研究を推進した。本年度は、引き続き基礎物性・安定性・キャリアドーピングの予測技術の高度化を進めるとともに、特定の既知・新規物質の基礎物性と点欠陥・キャリア形成挙動の詳細な考察、ハイスループットスクリーニングの実行、予測された物質の合成と電子・光学物性評価を継続した。とくに、Ga2O3-Al2O3固溶体について、多様な局所環境における酸素空孔の形成エネルギー及び電子状態の俯瞰的な解析を行うことで、半導体合金系における点欠陥の制御指針に関する知見を得た（Applied Physics Express誌に出版）。また、キャリアドーピング限界の理解に有用である真空準位に対する価電子帯上端位置（イオン化ポテンシャル）と伝導帯下端位置（電子親和力）について、約3千種類の酸化物無極性表面を対象にハイスループット第一原理計算を行い、そのデータを用いてニューラルネットワークによる予測モデルを構築することで、イオン化ポテンシャルと電子親和力の傾向の俯瞰的な解析を行った（Journal of the American Chemical Society誌に出版）。また極性表面・ヘテロ界面のバンド位置の予測手法を開発し、典型的な半導体の極性表面・ヘテロ界面についてその有効性を確認した（Physical Review Materials誌に出版）。

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  • Exploration of unique functions in ultra-thin insulator films

    Grant number：18H01700  2018.4 - 2020.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

    Hiramatsu Hidenori

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    Grant amount：\17550000 （ Direct Cost: \13500000 、 Indirect Cost：\4050000 ）

    I focused on strongly correlated insulators with characteristic crystal structures. Through various heavy carrier doping techniques, I found the following two novel electronic and magnetic functions: 1. p- and n-type carrier dopings and green emission of insulating sulfide SrHfS3, 2. Heavy carrier doping of SmFeAsO with the ZrCuSiAs structure and its high Tc superconductivity at 48 K

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  • In silico design, synthesis, and device fabrication of novel nitride semiconductors

    Grant number：17H01318  2017.4 - 2021.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

    Oba Fumiyasu

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    Grant amount：\43290000 （ Direct Cost: \33300000 、 Indirect Cost：\9990000 ）

    Promising new nitride semiconductors were proposed by in silico materials design and screening of candidate materials based on accurate and multifaceted first-principles calculations and machine learning. Design and selection guidelines were constructed based on detailed theoretical investigations of known nitride semiconductors, and several promising materials were identified by in silico screening using these guidelines. Moreover, theoretical predictions on bandgap tuning and carrier doping of selected nitride semiconductors were experimentally verified.

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  • Emergence of superconductivity in epitaxial films of compounds with ZrCuSiAs-type structure grown by pulsed laser deposition

    Grant number：26630305  2014.4 - 2016.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Challenging Exploratory Research

    Hiramatsu Hidenori

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    Grant amount：\3900000 （ Direct Cost: \3000000 、 Indirect Cost：\900000 ）

    At first, I attempted to develop an effective ex-situ growth method for KFe2As2 film, which is quite difficult to grow because K with high vapor pressure is a main constituent. Through this development, I wanted to get a hint to grow films of compounds with ZrCuSiAs-type structure by in-situ pulsed laser deposition. By the developed technique, I succeeded in obtaining epitaxial films of KFe2As2.
    According to this result, I explored growth method for a compound, SmFeAsO, with ZrCuSiAs-type structure by in-situ pulsed laser deposition technique. Optimizing the in-situ growth condition, I succeeded in obtaining the target material, F-doped SmFeAsO films (F is also a high vapor-pressure element.), exhibiting superconducting transition.

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  • Searching for new materials functions by atomic layer control

    Grant number：25106007  2013.6 - 2018.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

    Ohta Hiromichi, KATASE TAKAYOSHI, YAMANOUCHI MICHIHIKO

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    Grant amount：\121680000 （ Direct Cost: \93600000 、 Indirect Cost：\28080000 ）

    In this study, we fabricated “Nano-layers”, which are thin films controlled in the thickness at the atomic level. We searched for new materials functions, and worked on the development of Nanostructure information by providing the nano-layers to other groups. The major results are listed below. [1] We successfully enhanced the thermoelectric power factor of oxide-based superlattices double compared with the bulk. [2] We clarified the origin of carrier mobility suppression of a transparent oxide semiconductor and successfully realized high carrier mobility. [3] We found that two-dimensional electron gas in semiconductor shows high thermoelectric power factor. [4] We realized thin-film devices, which can switch their optical transmission, electrical resistivity, and magnetic properties simultaneously. [5] We realized iron-based superconducting films on the metallic tapes, which showed high critical current density suitable as practical applications.

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  • Clarification of growth mechanism of high-quality iron-based superconductor films and construction of growth technique of films exhibiting high performance

    Grant number：25709058  2013.4 - 2017.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Young Scientists (A)

    Hiramatsu Hidenori

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    Grant amount：\26130000 （ Direct Cost: \20100000 、 Indirect Cost：\6030000 ）

    Using pulsed laser deposition (PLD) employing 4 types of pulsed lasers, we explored the growth condition to obtain high quality BaFe2As2:Co thin films, and found that the optimum growth rate is constant to be 0.3nm/sec even if we employ different pulsed lasers for PLD. Further, we applied this optimized process to growth of BaFe2As2:P that we can expect higher critical temperature (~30 K) than that of BaFe2As2:Co (~20 K). Consequently, we succeeded in achieving high-performance critical current density of 7 MA/cm2, which is almost the same as the level of the final target (10 MA/cm2) for this research. Additionally, we fabricated the films on practically applied metal-tape substrates and achieved high performance practical level Jc of 0.1 MA/cm2 at 15 T.

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  • Proposal on a design concept of thin-film coated conductors using iron-based superconductors

    Grant number：23750214  2011 - 2012

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Young Scientists (B)

    HIRAMATSU Hidenori

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    Grant amount：\4550000 （ Direct Cost: \3500000 、 Indirect Cost：\1050000 ）

    Transport properties of bicrystal grain boundary (BGB) junctions were studied in cobalt-doped BaFe_2 As_2 (BaFe_2 As_2 :Co) epitaxial films grown on [001]-tilt bicrystal substrates of MgO and (La, Sr)(Al, Ta)O_3 with misorientation angles θ_GB=3-45o. A transition from a strongly-coupled GB behavior to a weak-link behavior was observed in current density- voltage characteristics under self-field around θ_GB ~9°. This result clarifies that the high performance thin-film coated conductors using iron-based superconductors can be fabricated when we employ a metal-tape substrate with the in-plane orientation <9°.

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