Updated on 2025/10/01

写真a

 
HOSONO HIDEO
 
Organization
Institute of Integrated Research MDX Research Center for Element Strategy Institute Professor
Title
Institute Professor
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News & Topics
  • 水素貯蔵技術の進歩:貯蔵中の蒸発ロスを防ぐ触媒の開発指針を獲得

    2023/12/18

    Languages: Japanese

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    概要NIMSと東京工業大学の研究チームは、液体水素の大規模な輸送と貯蔵に不可欠なオルソ/パラ水素変換触媒材料の設計原理を明らかにしました。化石燃料に代わる有力な燃料として認知されつつある水素は、-253°C以下の温度と1気圧以上の圧力で体積が大幅に減少して液体となり、輸送や貯蔵に適した状態

  • Topological Insulator Catalysts for High-Yield Room-Temperature Synthesis of Organoureas

    2023/09/28

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    The unique quantum properties of bismuth selenide make it a promising catalyst for the synthesis of organic ureas, as demonstrated by scientists at Tokyo Tech. Thanks to its topological surface s

  • トポロジカル絶縁体を触媒として有機尿素類を室温で高収率合成 量子の力の触媒への展開

    2023/09/25

    Languages: Japanese

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    要点-有機尿素の室温合成にBi2Se3ナノ粒子が安定で高機能な固体触媒となることを発見-トポロジカル絶縁体(TI)の表面のタフさと大きなスピン軌道相互作用を利用-エレクトライド触媒に続き、量子物質の実用触媒としての道を開く概要東京工業大学元素

  • Water-Durable Perovskite-Oxynitride Supported Nickel Catalysts for Ammonia Decomposition

    2023/08/01

    Languages: English

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    The ammonia decomposition performance of nickel-based catalysts can be significantly improved by supporting them on a perovskite-type oxynitride like h-BaTiO3−*x*N*y*, demonstrate researchers fro

  • 貴金属を使わず、水に安定かつ高性能なアンモニア分解触媒を開発 分解反応温度を140℃以上低温化させることに成功

    2023/07/28

    Languages: Japanese

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    要点-六方晶チタン酸バリウム(h-BaTiO3−*x*)の酸化物骨格に窒素イオン(N3−)を導入した酸窒化物が、水中でも安定で効率的なアンモニア分解に寄与することを実証-h-BaTiO3−*x*N*y*担体の表面に存在する窒素空孔サイトをアンモニア分解反応の反

  • Room-Temperature, Solid-State Synthesis of High-Quality Cs3Cu2I5 Thin Films

    2023/05/31

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    A new solid-state process that produces smooth Cs3Cu2I5 films with excellent optical properties and occurs at room temperature has been developed by Tokyo Tech researchers. Cs3Cu2I5 is a metal ha

  • 高い発光性能を持つ蛍光体の、特異な構造の生成機構を解明 結晶中の「隙間」を用いた発光材料の設計指針の提案

    2023/05/26

    Languages: Japanese

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    要点-発光の量子効率75%の青色蛍光体を、室温の固相反応で薄膜化することに成功-高効率発光の起源となっている特異な構造が形成される機構を解明-単純な結晶構造中の隙間を利用した新機能設計に道を開く発見概要東京工業大学国際先駆研究機構元素戦略M

  • Record Ammonia Production Achieved with Inexpensive Cobalt Catalyst at Low Temperatures

    2023/04/28

    Languages: English

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    A new barium-containing oxyhydride electride (BaAl2O4-xHy) support material developed by Tokyo Tech researchers boosts the catalytic activity of cobalt catalysts, enabling low-temperature synthes

  • アンモニア合成を促進する新しい水素化物を開発 大気に対する安定性と高い触媒活性の両立を実現

    2023/04/28

    Languages: Japanese

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    要点-陽イオンを包接したトリジマイト型構造を取るBaAl2O4の酸素の一部をH−に置き換えることで、結晶構造中の空間に窒素の活性化に重要な電子を安定化できる新材料を開発-三次元的に連結したAlO4四面体骨格の隙間に電子が保護され、大気にさらしても安定

  • Opening a New Frontier: PdMo Intermetallic Catalyst for Promoting CO2 Utilization

    2023/04/14

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    h-PdMo, a recently discovered catalyst, can convert carbon dioxide (CO2) into useful methanol at room temperature and low-pressure conditions, as demonstrated by researchers at Tokyo Tech. This n

  • 室温で二酸化炭素をメタノールへ変換できる触媒を創製 カーボンニュートラルの実現に向けた新材料

    2023/04/11

    Languages: Japanese

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    要点-酸化物前駆体のアンモニア処理による簡便な手法によって、パラジウム(Pd)とモリブデン(Mo)が交互に積層した金属間化合物触媒を合成-大気下および反応雰囲気下でも性能が劣化しない高い安定性を実現-加圧条件下(0.9MPa)において、二酸化炭素水素化に

  • パワー半導体β-Ga2O3の特性を左右する 水素の準安定状態を解明 材料中の微量水素が持つ「2つの顔」に迫る

    2023/02/14

    Languages: Japanese

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    要点-半導体材料中に広く存在する水素は、わずかな量でも材料の電気特性を大きく左右する重要な不純物欠陥。擬水素としてのミュオンはそれを調べる数少ない手法。-J-PARCの大強度ミュオンビーム利用により、β-Ga2O3(ガリア)中で擬水素としてのミュオンが取る第2

  • 貴金属フリーの耐水性アンモニア合成触媒 「グリーンアンモニア」の実現を目指す 新たな材料設計アプローチ

    2022/11/02

    Languages: Japanese

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    要点 温和な条件下でのアンモニア合成で、湿気にさらしても活性が低下しない触媒を実現 水分に対して安定な窒化物を担体として用い、反応中に活性が高い窒化物に転化 非希少金属から構成され、水分に強いことから、高い実用性を期待 概要東京工業大学 元素戦略MDX研究センターの細野秀雄栄誉教授、魯楊帆特任助教(研究当時、現:重慶大学准教授)、北野政明准教授らは、温和な条件下での「グリーンアンモニア合

  • Durable, Inexpensive Catalyst Reduces Carbon Footprint of Ammonia Production

    2022/11/01

    Languages: English

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    To reduce the energy requirements of the Haber-Bosch process, which converts nitrogen and hydrogen to ammonia, researchers from Tokyo Tech have developed a metal nitride catalyst containing an active

  • 触媒機能をサポートする新規担体の開発に成功 H-含有BaTiO(3-x)HxとPd触媒の協働による反応効率向上を観測

    2022/04/21

    Languages: Japanese

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    要点-負電荷を持つ水素イオン(ヒドリドイオン)を高濃度に含む六方晶BaTiO(3-*x*)H*x*を合成-Pd担持BaTiO(3-*x*)H*x*は液相および気相水素化に対して高い活性と再利用性-高い耐水性および大気安定性を示すため様々な化学反応への応用が期待できる概要東京工業大学科学技術創成研究院

  • Making Metal–Halide Perovskites Useful in Planar Devices Through a New Hybrid Structure

    2022/02/04

    Languages: English

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    Two of the main drawbacks of using tin (Sn)-based metal halide perovskites (MHPs) in thin-film transistors have been simultaneously solved by an inno

  • IGZO-TFTに続く、薄膜トランジスタ技術の革新機軸の提案 低環境負荷pチャンネルTFTの高性能化・低コスト化を実現

    2022/01/31

    Languages: Japanese

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    要点-「一長一短」の物質同士の長所を活かすアイデアで、TFT特性を大きく改善-有害元素フリーのハロゲン化物の溶液から高性能pチャンネルTFTを実現-従来のIGZO-TFTと組みわせた高性能CMOSとして機能することを実証概要東京工業大学元素戦略研究センターの金正煥(JunghwanKim、キム・ジョ

  • Scientists Observe Record High Hydride Ion Conductivity Using Modified Lanthanum Trihydride

    2022/01/25

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    Lanthanum trihydride, a compound of lanthanum and hydrogen, when lightly doped with oxygen shows potential as an efficient hydrogen carrier, accordin

  • 室温で世界最高のヒドリドイオン(H−/水素陰イオン)伝導度を実現 低炭素社会に向けた物質生産プロセスの革新や燃料電池の開発に貢献

    2022/01/25

    Languages: Japanese

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    要点-酸水素化ランタン(LaH3−2*x*O*x*)を用い、常温で世界最高の伝導度(従来の1,000倍以上)を示すヒドリドイオン(H−/水素陰イオン)伝導体を創出-高速プロトン(H+)伝導体に匹敵する常温伝導度(~10−3Scm−1)を達成-動きやすいH−と動きにくいH−の存在を計算で解明概要東京工

  • Fabricating Stable, High-mobility Transistors for Next-generation Display Technologies

    2021/12/16

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    The trade-off between carrier mobility and stability in amorphous oxide semiconductor-based thin film transistors (TFTs) has been finally overcome by

  • 低温ポリシリコン(LTPS)に匹敵する高性能で安定なアモルファス酸化物薄膜トランジスタ(TFT)を実現

    2021/12/10

    Languages: Japanese

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    要点-高移動度の酸化物TFTで不安定性が生じるメカニズムを解明。-LTPSに匹敵する高い移動度と実用レベルの安定性を両立した酸化物TFTを実現。-均質な薄膜を容易に作製でき、レーザー照射も不要である点がLTPSよりも圧倒的に有利。概要東京工業大学元素戦略研究センターの金正煥(JunghwanKim、

  • Breaking Ammonia: A New Catalyst to Generate Hydrogen from Ammonia at Low Temperatures

    2021/09/01

    Languages: English

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    Ammonia, a carbon-free resource can be split into nitrogen and hydrogen gas with the help of metal catalysts like Nickel (Ni). However, these reactio

  • 貴金属を使わずに高効率でアンモニアを分解 100℃低温化できる高性能なNi触媒を開発

    2021/08/31

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    要点-カルシウムイミド(CaNH)とニッケル(Ni)を組み合わせ、既存のNi触媒よりもアンモニア分解の反応温度を100℃下げることに成功-CaNH表面のNH空孔でNH3分子を活性化-アニオン空孔を活用した触媒の設計法を示す成果概要東京工業大学物質理工学院材料系の小笠原気八(博士後期課程2年)、元素戦

  • 水素は軟らかい金属を好む? 水素化物の出現を支配する因子を解明

    2021/08/30

    Languages: Japanese

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    概要国立研究開発法人物質・材料研究機構及び国立大学法人東京工業大学は、水素社会における基盤技術と位置付けられる金属水素化物の探索において、母体金属の硬さが金属の水素化物形成能の支配因子であることを発見しました。この単純な判定指針を用いることにより、従来のような試行錯誤の材料探索に頼らず、効率的な水素

  • 高エントロピー2次元ファンデルワールス結晶の合成に成功 新たな物性を持つ新物質群

    2021/06/17

    Languages: Japanese

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    要点-2次元物質の特徴を併せ持つ、高エントロピー物質の新物質群を創製-3種類の2次元結晶を基にして16種類の高エントロピー物質を合成-混合前の2次元結晶にはみられない電子物性と優れた化学耐久性を実現概要東京工業大学元素戦略研究センターの应天平(TianpingYing)研究員(研究当時)、細野秀雄栄

  • Best of Both Worlds: High Entropy Meets Low Dimensions, Opens Up Infinite Possibilities

    2021/06/17

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    Scientists at Tokyo Institute of Technology (Tokyo Tech) created a novel type of material that combines the structural flexibility of van der Waals m

  • 低温で高効率なアンモニア合成を実現 ヒドリドイオン伝導体を用い反応温度を100℃下げることに成功

    2020/12/25

    Languages: Japanese

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    要点-負の電荷を持った水素イオンであるヒドリドイオンの伝導体である酸水素化物を用いルテニウム触媒の作動温度を低温化-触媒表面でのヒドリドイオンの移動度が触媒活性に大きく寄与-水素化物の担体の欠点であった窒化による活性低下を解決概要東京工業大学物質理工学院材料系の大屋彼野人元大学院生(当時修士課程2年

  • Having it Both Ways: A Combined Strategy in Catalyst Design for Suzuki Cross-Couplings

    2020/12/02

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    Scientists at Tokyo Institute of Technology (Tokyo Tech) have designed a novel catalyst for the Suzuki cross-coupling reaction, which is widely used i

  • 触媒活性・安定性・貴金属利用効率を向上 金属間化合物ZrPd3とナノポーラス炭化ジルコニウムを組み合わせる

    2020/11/30

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    要点-ナノポーラス構造の炭化ジルコニウムを合成、表面にZrPd3ナノ粒子を分散-パラジウムの触媒活性が既存触媒の一桁以上高く、貴金属利用効率が大幅向上-水素化反応などのより広い有機反応への応用が期待される概要東京工業大学元素戦略研究センターの細野秀雄栄誉教授(物質・材料研究機構兼任)、魯楊帆(Yan

  • Shedding Light on the Development of Efficient Blue-Emitting Semiconductors

    2020/09/17

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    Scientists at Tokyo Institute of Technology (Tokyo Tech) have discovered a new alkali copper halide, Cs5Cu3Cl6I2, that emits pure blue light. The combination of the two halide ions, chloride and i

  • 発光効率と大気安定性が高い、有害元素フリーの新規青色発光体を実現

    2020/09/16

    Languages: Japanese

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    要点-発光効率95%の青色発光体を開発。-大気中で高い安定性があり、鉛やカドミウムなど有害元素を含まない。-室温で溶液から合成可能で、フレキシブルディスプレイなどへの応用を期待。概要東京工業大学元素戦略研究センターの李江伟(Jiangwei

  • ニッケル触媒のアンモニア合成活性、窒素空孔の形成されやすさが鍵 貴金属を使わない触媒の新たな開発指針に

    2020/08/20

    Languages: Japanese

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    窒素空孔の形成されやすさがアンモニア合成触媒活性の指標となることを発見 ニッケル触媒では窒化セリウムとの組み合わせが最も活性が高く、既存のルテニウム触媒に匹敵することを確認 新たな触媒活性の指標により、ルテニウムなどの貴金属を使わないアンモニア合成触媒の開発が加速されると期待

  • Filling the Void in Ammonia Synthesis: The Role of Nitrogen Vacancies in Catalysts

    2020/08/18

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    Scientists at Tokyo Institute of Technology (Tokyo Tech) explore how nitrogen vacancies in catalysts participate in the synthesis of ammonia, a pivotal chemical in the fertilizer industry. They devised a general rule for the smart design of nitride-based catalysts based on their nitrogen vacancy formation energy and created a high performing catalyst for ammonia synthesis using cerium, an abundant transition metal.

  • ニッケルを使った高性能アンモニア合成触媒を開発 貴金属を使わない新コンセプトによる触媒技術

    2020/07/16

    Languages: Japanese

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    要点-単独では活性を示さないニッケル(Ni)と窒化ランタン(LaN)を用いた高効率アンモニア合成に成功-ルテニウムなどの貴金属を使わずに高いアンモニア合成活性を実現-LaN表面の窒素空孔を反応場として利用する新コンセプトを実証概要東京工業大学

  • Running on Empty: New Affordable Catalyst Relies on Nitrogen Vacancies to Produce Ammonia

    2020/07/16

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    Scientists at Tokyo Institute of Technology (Tokyo Tech) have developed a new and more effective catalyst for synthesizing ammonia that does not comprise rare metals. Ammonia is one of the most wi

  • 自然磁気ヘテロ構造を利用した単層磁石へのアプローチ

    2020/05/20

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    要点-磁性層と非磁性層からなる磁気ヘテロ構造のバルク物質(MnBi2Te4)m(Bi2Te3)nの発見と合成-本結晶を用いた2次元単層磁石の提案-トポロジカル物性と2次元磁石を研究するためのプラットホームになるものと期待される概要東京工業大学

  • 50 ℃で水素と窒素からアンモニアを合成する新触媒 「CO2排出ゼロ」のアンモニア生産へブレークスルー

    2020/04/27

    Languages: Japanese

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    要点-50℃未満で水素と窒素からアンモニアを合成できる触媒の開発に初めて成功-今回、開発した触媒は既存の触媒を凌駕する性能で、CO2排出ゼロを実現-開発した触媒によって自然エネルギーからのアンモニア生産へ道が開かれた概要東京工業大学科学技術

  • 安定で高活性な白金の単原子触媒を実現

    2020/02/25

    Languages: Japanese

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    要点-白金原子を担持体表面のケージ構造の破れ部分に入れ込むことで安定に固定した、新たな単原子触媒の開発に成功-従来の単原子触媒で問題とされていた、高温で原子が凝集してしまうという欠点を克服-担持体として12CaO・7Al2O3を用いることで、CaOやAl2

  • An 'exceptionally stable' single-atom catalyst: Single platinum atoms stabilized in C12A7 crystals

    2020/02/25

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    Scientists at Tokyo Institute of Technology (Tokyo Tech) have shown that single platinum atoms trapped in C12A7 crystals act as a stable and effective catalyst for the hydrogenation of nitroarenes

  • A nanoscale lattice of palladium and yttrium makes for a superlative carbon-linking catalyst

    2020/01/30

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    A group of materials scientists at Tokyo Institute of Technology has shown that a palladium-based intermetallic electride, Y3Pd2, can improve the efficiency of carbon–carbon cross-coupling reactio

  • 高効率で安定な固体触媒「Y3Pd2」を活用 鈴木カップリング反応の高活性化と安定性を実現

    2020/01/20

    Languages: Japanese

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    要点-炭素―炭素の結合の形成反応に高い活性と安定性をもつ固体触媒を発見-触媒となる物質はY3Pd2という化合物で電子が陰イオンとして働く電子化物-優れた特性はイオン化しやすい電子と負の電荷をもったパラジウムに起因概要東京工業大学元素戦略研究セ

  • 導電性を制御可能な新しいナノシート材料の開発に成功 水素とホウ素の特異な構造と有機分子吸着がカギ 分子応答性センサーや触媒応用へ期待

    2019/12/10

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    概要1.NIMS、筑波大学、JASRI、東京大学、東工大細野秀雄栄誉教授らの研究チームは、ホウ素と水素のみからなる導電性を持つ新たなナノシート材料を開発しました。またJASRIと共同で、ナノシートを構成する水素原子が特殊な配置を取っており、その構造が原因で分子が吸着することにより導電性が大きく

  • Efficient bottom-up synthesis of new perovskite material for the production of ammonia

    2019/11/25

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    Scientists at Tokyo Institute of Technology (Tokyo Tech) found a way to synthesize a special type of perovskite that promotes the production of ammonia, which has key applications in fertilizer pr

  • 貴金属使わずアンモニア合成触媒となる新物質発見

    2019/11/25

    Languages: Japanese

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    要点-BaCeO3の酸素の一部を窒素と水素に置き換えた新物質を低温で合成-ルテニウムなどの貴金属を使わずに高いアンモニア合成の触媒活性を発見-窒素イオンと水素イオンが活性点として働く新しい反応メカニズムを提唱概要東京工業大学物質理工学院材

  • New design strategy brightens up the future of perovskite-based light-emitting diodes

    2019/08/08

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    Scientists at Tokyo Institute of Technology discover a new strategy to design incredibly efficient perovskite-based LEDs with record-setting brightness by leveraging the quantum confinement effect.

  • 低電圧高輝度ペロブスカイトLEDを実現

    2019/07/31

    Languages: Japanese

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    高性能ペロブスカイトLED実現に向けた新概念を提案 新アモルファス酸化物半導体で、励起子をペロブスカイト層内に閉じ込める 5 Vで500,000 cd/m2の緑色発光素子を実現

  • 中温域で世界最高の伝導度を示すヒドリドイオン伝導体を実現 燃料電池や電解水素化反応の効率化などに貢献

    2019/06/13

    Languages: Japanese

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    中温域(100-600 ℃)で世界最高の伝導度を示すヒドリドイオン伝導体を創出 ヒドリドイオンの振動の非調和性が大きいことがキーと解明

  • Finding a needle in a haystack: Discovery of Ti2InB2 for synthesizing layered TiB

    2019/05/31

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    Scientists at Tokyo Tech managed to use boron as the X element in a family of materials called MAX phases, for which only carbon and nitrogen could previously be used. A clever search strategy allowed them to avoid resorting to trial and error to design this novel material, from which layered TiB can be obtained for applications in Li- or Na-ion batteries.

  • 計算科学と実験で新機能物質(MAX相)を発見

    2019/05/24

    Languages: Japanese

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    金属とセラミックスの性質を備えたMAX化合物をホウ化物で実現 計算科学で新化合物Ti2InB2の存在が示唆され、実験で合成に成功 2次元構造の新物質TiBを合成、2次電池のアノードとしての優れた性質を示唆

  • 室温で緑色発光するp型/n型新半導体 ペロブスカイト型硫化物で実現

    2019/04/04

    Languages: Japanese

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    独自の化学設計指針でp型/n型半導体の電気特性や光学特性を制御 適切な元素置換がカギ グリーンギャップ問題を解決する次世代緑色LEDを開発

  • 有害元素フリーの高効率青色発光体を実現 LEDをマイルドな製造環境で作製可能に

    2018/09/20

    Languages: Japanese

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    蛍光量子効率90%の青色蛍光体を開発 有害元素を含まず室温で溶液から合成可能 電子注入層、正孔注入層の組み合わせでLEDの作製可能

  • Lighting it up: A new non-toxic, cheap, and stable blue photoluminescent material

    2018/09/20

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    Scientists at Tokyo Tech have designed a novel photoluminescent material that is cheap to fabricate, does not use toxic starting materials, and is very stable, enhancing our understanding of the quantic nature of photoluminescence.

  • Hideo Hosono's story of IGZO TFT development features in Nature Electronics

    2018/07/26

    Languages: English

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    Each issue of the journal Nature Electronics contains a column called Reverse Engineering, which examines the development of an electronic device now in widespread use from the viewpoint of the main inventor. So far, it has featured creations such as the DRAM, DVD, CD, and Li-ion rechargeable battery. The July 2018 column tells the story of the IGZO thin film transistor (TFT) through the eyes of Professor Hideo Hosono of Tokyo Tech's Institute of Innovative Research (IIR), who is also director of the Materials Research Center for Element Strategy.

  • 細野秀雄教授が明かすIGZO(イグゾー)薄膜トランジスタ開発物語 Nature Electronics誌に発表

    2018/07/20

    Languages: Japanese

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    Nature Electronics誌にはReverse Engineeringというコラムが毎号掲載されてます。実用化されて世の中に普及した電子デバイスを一つずつ取り上げ、なぜ、どのように開発されたかを主な発明者本人が解説する話題のページです。これまでDRAM、DVD、CD、リチウム2次電池などが紹介されてきました。東京工業大学 科学技術創成研究院の細野秀雄教授(元素戦略研究センター長)が執筆した IGZO-薄膜トランジスタ(TFT)の開発についてのコラムが同誌2018年7月号に掲載されたので、ご紹介します。

  • ありふれた元素で高性能な窒化物半導体を開発 安価な薄膜太陽電池開発につながる可能性

    2018/06/22

    Languages: Japanese

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    高い伝導キャリア移動度を持つp型およびn型の窒化銅半導体を開発 理論計算に基づいた設計と精緻な合成・評価実験の連携により実現 大面積・安価な窒化物半導体の薄膜形成に応用可能

  • 溶液塗布だけでできる透明p型アモルファス半導体を開発

    2018/02/16

    Languages: Japanese

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    室温かつ溶液コーティングで製膜できる透明p型アモルファス半導体を実現 正孔の移動度はn型透明アモルファス半導体IGZOに匹敵 大きな移動度を持つアモルファスp型半導体の設計指針を提示

  • Highly efficient ammonia synthesis catalyst developed

    2018/02/09

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    Researchers at Tokyo Tech have discovered that a catalyst of calcium amide1 with a small amount of added barium (Ba-Ca(NH2)2) with ruthenium nanoparticles immobilized onto it can synthesize ammonia at an efficiency 100 times greater than that of conventional ruthenium catalysts at low temperatures below 300 ℃. The performance of this catalyst is also several times higher when compared to iron catalysts currently being used industrially.

  • 低温で高効率にアンモニアを合成できる触媒を開発 現行の工業用触媒に比べて3倍以上

    2018/01/31

    Languages: Japanese

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    開発した新触媒は従来よりも低温で高効率にアンモニア合成ができる 現在工業的に広く用いられている鉄触媒と比較して数倍高い活性を持つ 新触媒は反応中に自動的に活性構造が形成(自己組織化)される

  • 貴金属を使わない高性能アンモニア合成触媒を開発

    2018/01/24

    Languages: Japanese

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    金属間化合物LaCoSiが高い触媒活性を実現した。 ルテニウムなどの貴金属微粒子の担持を必要としない。 活性化エネルギーが極めて低く新しい反応機構が示唆された。

  • Harnessing the rattling motion of oxygen ions to convert T-rays to visible light

    2017/11/29

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    A team of researchers led by Hideo Hosono at Tokyo Tech has shown that terahertz rays can be converted to light visible to the human eye. The finding is a breakthrough for functional materials research and could lead to the development of a new kind of terahertz detector.

  • 新たな発光材料の可能性を拓く「ナノコンポジット蛍光体」を開発 ―蛍光体探索の新たな道筋を示す―

    2017/11/28

    Languages: Japanese

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    株式会社小糸製作所(社長:三原弘志)は、東京工業大学(学長:三島良直)の細野秀雄教授の研究グループ、名古屋大学(総長:松尾清一)の澤博教授の研究グループとの共同研究の結果、空気中ですぐに潮解してしまうヨウ化カルシウムを用い、優れた耐久性と高い発光性能を持つ「ナノコンポジット蛍光体」の開発に成功しました。

  • ありふれた物質でテラヘルツ波を可視光に変換 ―ナノ空間に閉じ込められた酸素イオンを振動させて発光―

    2017/11/17

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    遠赤外線の一種であるテラヘルツ波を可視光に変換 石灰とアルミナのみで構成される結晶(C12A7)が波長変換の機能 ありふれた元素を使って有用な機能を創出(元素戦略)

  • 新しいシート状物質「ホウ化水素シート(ボロファン)」の誕生 ~優れた水素吸蔵性能を有する新材料~

    2017/09/27

    Languages: Japanese

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    電子材料や水素吸蔵材料として利用できる優れた特性を持つ物質として理論的にその存在が予想されていた二次元(シート状)物質「ホウ化水素シート(ボロファン)」を生成することに成功しました。二ホウ化マグネシウムと呼ばれる物質を原料として用い、これに含まれるマグネシウムの正イオンを水素の正イオンと交換することにより、ホウ素と水素の組成比が1:1のホウ化水素シートが室温・大気圧下という温和な条件で生成することを見出しました。ホウ化水素シートはプロトンを保持しており200 ℃以上で水素を放出するため、予測されていた電子材料や水素吸蔵材料以外にも、固体燃料や固体酸触媒としての応用が期待できます。

  • New Electride Made of Multiple Metals Discovered

    2017/09/06

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    An ionic crystal is composed of positive ions (cations) and negative ions (anions). A compound in which electrons serve as anions is called an electride. In 1983, the first electride was synthesized from organic compounds, attracting attention as an exotic material. However, the physical properties of this substance remained poorly understood due to its chemical and thermal instability.

  • 複数の金属からなる新たな電子化物を発見

    2017/08/28

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    金属間化合物で電子がアニオンとしてふるまう新しい電子化物を発見 結晶構造中の空隙が電子の局在サイトになることを解明 アンモニア合成触媒や超伝導を発現するなど様々な特性を持つ

  • 最高の超伝導転移温度(Tc)を持った鉄系超伝導物質の新たな特徴を発見

    2017/05/23

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    鉄系超伝導体である砒酸水素化鉄サマリウム(SmFeAsO1-xHx)に対しSmサイトとHサイトの同位体置換に成功 水素アニオンを用いることで従来法よりも5倍量以上の電子注入に成功 過剰に電子を注入すると、鉄ニクタイド中で最も大きな磁気モーメントを持つ反強磁性相が現れる

  • New antiferromagnetic phase: Clue to design of iron-based superconductor with higher critical temperature

    2017/05/23

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    In iron-based superconductors, high critical temperature (Tc) superconductivity over 50 K has only been accomplished in electron-doped hREFeAsO (hRE is heavy rare earth (RE) element). Although hREFeAsO has the highest bulk Tc (58 K), progress in understanding its physical properties has been relatively slow due to difficulties in achieving high-concentration electron doping and carrying out neutron experiments. Here, the researchers present a systematic neutron powder diffraction study of 154SmFeAsO 1-xDx, and the discovery of a long-range antiferromagnetic ordering with x ? 0.56 (AFM2) accompanying a structural transition from tetragonal to orthorhombic. Surprisingly, the Fe magnetic moment in AFM2 reaches a magnitude of 2.73 μB/Fe, which is the largest in all nondoped iron pnictides and chalcogenides. Theoretical calculations suggest that the AFM2 phase originates in kinetic frustration of the Fe-3dxy orbital, in which the nearest-neighbor hopping parameter becomes zero. The unique phase diagram, i.e., highest-Tc superconducting phase adjacent to the strongly correlated phase in electron-overdoped regime, yields important clues to the unconventional origins of superconductivity.

  • Research group at Tokyo Tech develops new material for the electron injection layer and transport layer of organic EL displays

    2017/02/17

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    As part of the Strategic Basic Research Programs of Japan Science and Technology Agency (JST), research group led by Professor Hideo Hosono at Institute of Innovative Research, Tokyo Institute of Technology has developed two new oxide semiconductors which are suitable for organic electronics.

  • 東工大の研究グループが有機ELディスプレイの電子注入層と輸送層用の新物質を開発

    2017/01/13

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    東京工業大学 科学技術創成研究院の細野秀雄教授らは、国立研究開発法人 科学技術振興機構(以下、JST)戦略的創造研究推進事業において、有機エレクトロニクスに適した新しい酸化物半導体を開発しました。

  • Development of highly active and stable ammonia synthesis catalyst under low temperatures

    2016/10/20

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    Profs. Hosono, Hara, Kitano, Abe and Dr. Inoue found that ruthenium nanoparticles immobilized on calcium amide (Ca(NH2)2) function as an efficient catalyst for ammonia synthesis at 300 ℃ and the catalytic activity is more than 10 times higher than that of the highest performance Ru catalysts reported so far. In addition, 3% Ba-doped Ca(NH2)2 supported Ru catalyst exhibited excellent stability during reaction for 700 h (almost 1 month).

  • 低温で高活性なアンモニア合成新触媒を実現

    2016/10/12

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    要点 カルシウムアミドにルテニウムを固定した触媒が300 ℃程度の低温度領域で従来よりも一桁高いアンモニア合成活性を実現した。平らな形状の大きさのそろったルテニウムのナノ粒子が自然に形成された。約1ヶ月の反応を継続しても触媒活性が劣化しないことが分かった。

  • Finding new controlling method for properties of glass

    2016/09/05

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    Finding new controlling method for properties of glass:Tiny amount of electron anions reduces the glass transition temperature more than 100 degreesElectride is a compound in which electrons serve as anions. A group of Tokyo Tech and Pacific Northwest National Laboratory led by Professor Hideo Hosono found that electride glass exhibits a property which has not seen in conventional glasses and succeeded in clarifying the mechanism.

  • ガラスの新しい物性制御法を開発―微量の電子を混ぜただけで、ガラスの転移温度が100℃以上も低下―

    2016/08/23

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    ポイント 液体の構造が凍結されてガラスになる転移温度は、ガラスの網目構造のつながり具合で決まるのが常識だった。酸素イオンを数%の電子に置き換えた「電子化物ガラス」は、網目構造は同じままで転移温度が大幅に低下することを発見した。電子が他のイオンより動きやすいために、電子化によりガラスの転移温度が低下することを、第一原理分子動力学計算[用語1]で検証した。陰イオンとして機能する電子の添加が新しいガラスの物性の制御法になることを提唱。

  • Computational materials screening and high-pressure synthesis reveal a promising nitride semiconductor for optoelectronics

    2016/06/23

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    Researchers use simulations to identify previously undiscovered semiconductors with promising attributes for optical and electronic applications. A nitride among those proposed has been successfully fabricated using high-pressure synthesis and is found to emit red light.

  • 希少元素を使わずに赤く光る新窒化物半導体を発見

    2016/06/22

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    発光デバイスや太陽電池への応用に期待マテリアルズ・インフォマティクスが物質探索を加速できることを実証窒素化合物に限らず新物質開拓の新たな道を開く

  • 東工大の研究成果を応用し、大型有機ELパネルの効率的な量産に貢献

    2016/05/26

    Languages: Japanese

  • Thin iron-based insulator-like film found capable of superconductivity at a high temperature

    2016/04/25

    Languages: English

  • 鉄系超伝導体の臨界温度が4倍に上昇

    2016/04/07

    Languages: Japanese

  • Drastic Improvement of Ammonia Production at Metal-Insulator Transition

    2015/12/09

    Languages: English

  • 電気抵抗の変化により触媒活性が劇的に向上―アンモニアの省エネ合成に有力な手がかり―

    2015/12/07

    Languages: Japanese

  • A new catalyst redefines rate limitations in ammonia production

    2015/04/08

    Languages: English

  • アンモニア合成の大幅な省エネ化を可能にした新メカニズムを発見

    2015/04/03

    Languages: Japanese

  • Transparent oxide glass with rubber like property

    2014/12/03

    Languages: English

  • ガラスがゴムになる ―エントロピー弾性を示す酸化物ガラスを実現―

    2014/12/02

    Languages: Japanese

  • High activity of C12A7 electride catalyst clarified

    2014/11/04

    Languages: English

  • Insulating parent materials in iron-based superconductors transition to metallic states by electric fields

    2014/10/31

    Languages: English

  • Discovery of second magnetic ordering phase accompanying structural change in iron-based superconducting materials

    2014/10/28

    Languages: English

  • Method established for detecting "Negative Hydrogen" H- ions in solids

    2014/10/23

    Languages: English

  • Discovery of Novel Three Iron-Chalcogenide Based Superconductors

    2014/08/29

    Languages: English

  • 3つの新しい鉄カルコゲナイド系超伝導体を発見 ―液体アンモニアを使った低温合成で実現―

    2014/08/27

    Languages: Japanese

  • 固体中の「負の水素」H-イオンの検出法を確立 ―材料の隠れた主役をあぶりだす―

    2014/03/27

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    要点・NMRの化学シフトによる水素の電荷状態の判別法の問題点を明らかにし是正法を提唱・水酸アパタイトを水素処理するとH-イオンがOH-の代わりに取り込まれることを立証・最もありふれた不純物である水素の役割の解明に有効なツール概要東京工業大学応用セラミックス研究所セキュアマテリアル研究センターの林克郎准教授、同元素戦略センターの細野秀雄教授らの研究グループは、固体中に生成される「マイナスの電荷をもった水素」(水素化物H-イオン)を、核磁気共鳴法(NMR)計測だけで簡単に特定する手法の確立に成功した。NMRによる観測限界を、物質中の水素の周りの空間の大きさと対応付ければ補正できるという発見により実現した。これを用い、歯や骨を構成する物質であるアパタイト中にもH-イオンが生成することを世界で初めて実証した。

  • 鉄系超伝導物質で新しい型の磁気秩序相を発見

    2014/03/17

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    高エネルギー加速器研究機構(KEK)物質構造科学研究所(以下「物構研」)の元素戦略・電子材料研究グループは、東京工業大学(以下「東工大」)応用セラミックス研究所の飯村壮史(いいむらそうし)助教、同大学フロンティア研究機構・元素戦略研究センター細野秀雄(ほそのひでお)教授、松石聡(まついしさとる)准教授と共同で、マルチプローブの手法を用いて鉄系超伝導物質であるLaFeAs(O1-xHx)の磁気的な性質および構造を調べ、水素置換濃度xが0.4を超える領域で微細な構造変化を伴う新たな磁気秩序相が現れることを発見しました。この磁気秩序相は、同物質において2012年に明らかになった第二の超伝導相と隣接しており、従来知られていた母物質(x=0)における磁気秩序相とも質的に異なることから、もう一つの母物質が見出されたことになり、新たな超伝導機構解明の有力な手がかりとなることが期待されます。

  • 鉄系超伝導体の絶縁体親物質が 電界により金属状態へ転移 ― 超伝導転移温度の高温化に手がかり ―

    2014/03/04

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    東京工業大学元素戦略研究センターの細野秀雄教授らの研究グループは、鉄系超伝導体物質群の中では唯一のモット絶縁体である層状セレン化合物TlFe1.6Se2(Tl:タリウム、Fe:鉄、Se:セレン)に着目し、電気二重層トランジスタ構造を利用して、外部電界の印加によって、超伝導現象の予兆とも言える金属に近い状態まで相転移させることに成功した。今回の結果は、鉄系層状物質で初めて観察された電界誘起相転移である。トランジスタ構造を利用したキャリア生成方法は、一般的な不純物の添加によるキャリア生成とは異なり、自由にかつ広範囲にキャリア濃度を制御できるという特徴がある。従って、元素置換によるキャリア添加が不可能な物質であっても適用が可能であることから、今後の鉄系層状物質のより高い超伝導転移温度を実現する有力な方法になるものと期待される。

  • C12A7電子化物担体触媒の高活性を解明―エレクトライドの強力な電子供与性が威力―

    2014/02/21

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    東京工業大学フロンティア研究機構の細野秀雄教授らの研究グループは、セメントの成分である石灰とアルミナの化合物、12CaO・7Al2O3(C12A7)のエレクトライド(電子化物)「C12A7:e- 」表面にルテニウム(Ru)を担持した触媒が、アンモニア合成に対して高い触媒活性を示すメカニズムを解明した。反応を単純化したモデルにより第一原理計算で検討し、Ru を担持したC12A7:e-の電子供与性が触媒活性に威力を発揮していることを明らかにした。電子がアニオン(陰イオン)として働く化合物であるエレクトライドは、ユニークな物性を有することが明らかになりつつある。その典型例がアルカリ金属のように電子を与えやすく、それでいて化学的・熱的に安定なC12A7:e-だ。細野教授らはこの物質の表面にRu を担持すると、優れたアンモニア合成触媒になることを2012 年に発表した。…

  • 2次元性エレクトライド(電子化物)を発見 -金属カルシウムより電導度が高い層状構造化合物Ca2N-

    2013/01/31

    Languages: Japanese

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    1) 電子が陰イオンとなっている電子化物(エレクトライド)で、電子が2 次元の隙間に存在する物質を発見2) カルシウム(金属元素)と窒素(電気を流さない)との化合物で、カルシウム金属より高い電気伝導度を実現3) 電導電子が空間的隙間に存在するため極めてスムーズに可動(金属では原子核により抵抗を受ける)4) ありふれた元素から構成される物質で銀や銅に匹敵する電導性を持つ物質がナノ構造の工夫で実現できることを明示(元素戦略)

  • 高活性なアンモニア合成触媒を実現 -アンモニア合成の新技術として期待-

    2012/10/22

    Languages: Japanese

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    窒素と水素の反応によって合成されるアンモニアは、人類が最も多く生産する化学薬品であり、その生産量は年間1.7億トンを越える勢いになっており、さらに増え続けています。アンモニアは肥料原料として社会を支えてきただけではなく、近年では燃料電池等のエネルギー源として期待が高まっています。約100年前に確立された触媒によるアンモニア製造技術は高温・高圧のプロセスが必要であり、多エネルギー消費型のプロセスです。アンモニア生産時の消費エネルギーを可能な限り低減することは、食糧とエネルギーに大きく貢献することが期待されていました。このような背景の中、東京工業大学応用セラミックス研究所の細野秀雄教授、原亨和教授のグループは、セメントの構成成分の一つである12CaO・7Al2O3(以下C12A7)の構造の中に電子を取り込んだエレクトライドにルテニウムのナノ粒子を固定することで高性能なアンモニア合成触媒…

  • 新たなLED照明の可能性を拓く ありふれた元素から、新しい蛍光体を開発。

    2012/10/17

    Languages: Japanese

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    株式会社小糸製作所(社長 大嶽昌宏)は、東京工業大学(学長 三島良直)の細野秀雄教授の研究グループ、名古屋大学(総長 濱口道成)の澤博教授の研究グループとの共同研究により、新しいLED用Cl_MS(クルムス)蛍光体※1を開発しました。Cl_MS蛍光体は、主成分が貝・骨・岩石や塩などに含まれるありふれた元素で構成される酸化物でありながら、新しい結晶構造を持つ新物質です。近年、地球規模の課題である低炭素社会の実現に対し、省エネルギー性能に優れる白色LEDは、環境に優しい光源として普及が進んでいます。現在主流の白色LEDは、青色チップと黄色蛍光体(YAG蛍光体)を組み合わせたものです。このタイプの白色LEDは発光部が狭く点光源状に発光するため、不快な眩しさを生じ易い、照射範囲が狭いなどの課題があります。そのため、ダウンライトやスポットライトなどの部分照明には適していますが、部屋全体…

  • 鉄系超伝導体:新メカニズムを示唆する決定的な実験結果

    2012/07/11

    Languages: Japanese

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    東京工業大学 フロンティア研究機構の細野秀雄教授、応用セラミックス研究所 松石聡助教と飯村壮史大学院生らのグループは、水素のマイナスイオンを用いることで、鉄系超伝導体に従来の3倍以上の電子を注入することに成功し、新たな超伝導を発現する領域を発見しました。今回、新しく発見された領域の方が、これまで知られていた領域よりもTcが高く、超伝導が発現する範囲も広範なことを判明しました。これらの結果は、今まで受け入れられつつあったスピンによるメカニズムでは説明が困難であり、軌道が主役を演じる機構の重要性を示す決定的な実験結果と見做すことができ、より高いTcをもつ物質探索の有力な指針を提供しています。本研究は、最先端研究開発支援プログラム「FIRST」の一環として行われたもので、一部の実験は大型放射光施設SPring-8と共同で実施されました。

  • ゲルマニウム酸化物の透明電子伝導体を実現

    2011/09/14

    Languages: Japanese

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    東京工業大学フロンティア研究機構の細野秀雄教授(応用セラミックス研究所兼任)、溝口拓特任准教授、及び応用セラミックス研究所の神谷利夫教授、松石聡助教は、SrGeO3(ゲルマン酸ストロンチウム)の組成からなる新しいタイプの透明電子伝導体を実現した。透明電子伝導性材料はフラットディスプレーをはじめ幅広い応用があり、現代社会において必須の機能材料となっている。一方、そのほとんどはインジウム、スズ、カドミウムなどの重金属を主成分とする酸化物であり、希少、高価、かつ毒性を持つものが多いというのが現状である。そこでより軽元素を主成分とする代替材料が待望されていた。

  • In search of new functional materials

    2011/03/31

    Languages: English

  • 水を使って絶縁体から効率のよい熱電材料を作ることに成功

    2010/11/17

    Languages: Japanese

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    フロンティア研究センターの特任准教授 金聖雄、野村研二と細野秀雄教授は、名古屋大学の太田裕道准教授(JST さきがけ研究員兼任)、東京大学の幾原雄一教授のグループとの共同研究により、アルミナセメントの構成成分12CaO・7Al2O3(C12A7)のガラス薄膜をゲート絶縁体として用いて、絶縁体のチタン酸ストロンチウム(STO)に電界を印加することで、効率の高い熱電機能を実現した。

  • 鉄系高温超伝導物質の発見が世界的なブームを巻き起こす

    2009/01/07

    Languages: Japanese

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    本学フロンティア研究センターの細野秀雄教授を中心とする研究グループによる「鉄系高温超伝導物質の発見」が,一大研究ブームを世界中に巻き起こしている.細野教授の研究グループは鉄系の化合物が絶対温度32度と高い温度で超伝導を示すことを発見し,2008年2月「米国化学会誌」にオンラインで発表した

  • 新系統(鉄イオンを含む層状化合物)の高温超伝導物質を発見

    2008/02/19

    Languages: Japanese

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    JST基礎研究事業の一環として,細野 秀雄(東京工業大学 フロンテイア研究センター 教授)らは,新系統の高温超伝導物質(鉄を主成分とするオキシニクタイド化合物LaOFeAs)を発見しました.

  • セメントが超電導体化

    2007/06/13

    Languages: Japanese

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    本学フロンティア創造共同研究センター 細野秀雄教授,独立行政法人理化学研究所河野低温物理研究室 河野公俊主任研究員らの研究グループは,石灰とアルミナから構成される化合物12CaO・7Al2O3(C12A7)が,超電導を示すことを発見した.

  • 絶縁体であるセメントを導電体の金属に変身させる

    2007/05/07

    Languages: Japanese

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    本学フロンティア創造共同研究センター応用セラミックス研究所の細野秀雄教授を中心とする研究グループと,公立大学法人大阪府立大学の久保田佳基准教授,独立行政法人理化学研究所の高田昌樹主任研究員らによる共同研究グループは,絶縁体であるセメントを,導電性を有する金属へと電気的な性質を劇的に変えてみせた.

  • ありふれた酸化物を使って巨大な熱起電力を発見

    2007/01/22

    Languages: Japanese

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    フロンティア研究センター&応用セラミックス研究所の金聖雄研究員と細野秀雄教授(JST戦略的創造研究継続研究 代表)らは、名古屋大学工学研究科の太田裕道助教授ら(CREST 研究代表者 河本邦仁名古屋大学教授)および、東京大学の幾原雄一教授らとの共同研究によって、人工宝石として知られるありふれた酸化物チタン酸ストロンチウム(注1)を使って高い効率を示す熱電変換材料の開発に世界で初めて成功しました.本成果は、英国科学誌「ネイチャー・マテリアルズ」(電子版)に、2007年1月21日(英国時間)に公開されました.

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News & Media

Degree

  • Doctor of Engineering ( Tokyo Metropolitan University )

Research Interests

  • superconductor

  • Oxide Semiconductors

  • New Materials

  • Catalyst

Research Areas

  • Nanotechnology/Materials / Inorganic materials and properties

Education

  • Tokyo Metropolitan University   Graduate School, Division of Engineering

    - 1982

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    Country: Japan

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  • Tokyo Metropolitan University   Faculty of Engineering

    - 1977

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    Country: Japan

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Research History

  • National Institute for Materials Science   Distinguished Fellow

    2020.4

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  • Tokyo Institute of Technology   Institute of Innovative Research   Professor

    2017.10 - 2019.3

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  • Tokyo Institute of Technology   Materials Research Center for Element Strategy   Director

    2016.4

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  • Tokyo Institute of Technology   Frontier Research Center   Professor

    2004.10

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  • Tokyo Institute of Technology   Materials and Structures Laboratory   Professor

    1999.11

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  • Tokyo Institute of Technology   Materials and Structures Laboratory   Associate Professor

    1997.4

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  • Okazaki National Research Institute   Institute for Molecular Science   Associate Professor

    1995.4

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  • Tokyo Institute of Technology   Research Laboratory of Engineering Materials   Associate Professor

    1993.7

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  • Nagoya Institute of Technology   Associate Professor

    1990.3

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  • Vanderbilt University   Visiting Associate Professor

    1988.9

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  • Nagoya Institute of Technology   Assistant Professor

    1982.4

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Professional Memberships

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Committee Memberships

  • 日本学術会議   連携会員  

    2017.10   

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    Committee type:Other

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  • 日本学術会議   会員  

    2011.10   

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    Committee type:Other

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Papers

  • Valence Band Modulation Using Cationic Filled p Orbitals toward p-Type Conduction

    Hiroshi Mizoguchi, Satoru Matsuishi, Hiroyo Segawa, Noriko Saito, Hideo Hosono

    Crystal Growth & Design   25 ( 6 )   1892 - 1896   2025.3

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    Publishing type:Research paper (scientific journal)   Publisher:American Chemical Society (ACS)  

    DOI: 10.1021/acs.cgd.5c00012

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  • Anion vacancies activate N2 to ammonia on Ba–Si orthosilicate oxynitride-hydride

    Zhujun Zhang, Kazuki Miyashita, Tong Wu, Jun Kujirai, Kiya Ogasawara, Jiang Li, Yihao Jiang, Masayoshi Miyazaki, Satoru Matsuishi, Masato Sasase, Tomofumi Tada, Hideo Hosono, Masaaki Kitano

    Nature Chemistry   2025.2

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    Publishing type:Research paper (scientific journal)   Publisher:Springer Science and Business Media LLC  

    DOI: 10.1038/s41557-025-01737-8

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    Other Link: https://www.nature.com/articles/s41557-025-01737-8

  • <scp>LAX</scp> phases: A family of novel stable layered materials, informatics‐based discovery

    Ehsan Alibagheri, Mohammad Khazaei, Mehdi Estili, Alireza Seyfi, Hiroshi Mizoguchi, Kaoru Ohno, Hideo Hosono, S. Mehdi Vaez Allaei

    InfoMat   2025.2

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    Publishing type:Research paper (scientific journal)   Publisher:Wiley  

    Abstract

    Ternary MAX phases, characterized by the chemical formula M₂AX, represent a group of layered materials with hexagonal lattices. These MAX phases have been the subject of extensive experimental and theoretical studies. Formation energy and thermodynamic calculations indicate that MAX phases containing late transition metals, such as Rh, Ru, Pt, Pd, Co, and Ni, are unlikely to form. Here, we introduce an alternative family of orthorhombic and monoclinic materials, the LAX phases, which exhibit similarities to MAX phases in terms of their layered structure and A and X elements. However, LAX materials incorporate late transition metals in place of the early transition metals. Advanced techniques for predicting the crystal structure of materials, coupled with data‐driven materials research and machine learning algorithms, were employed to investigate the stable structures containing transition metals from the last groups of the d‐block elements. The analyses revealed 207 ternary LAX systems that demonstrate robust stability against decomposition, with 100 of these systems showing dynamic stability. An in‐depth examination of the top 10 structures revealed five LAX systems that are phase stable and exhibit superior mechanical properties, outperforming MAX phase counterparts in Young's modulus, stiffness, and hardness. These findings indicate that many LAX phase structures are viable candidates for future synthesis, highlighting the potential of heuristic‐based structure searches in material discovery.

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    DOI: 10.1002/inf2.12664

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  • Ammonia Decomposition Catalyzed by Co Nanoparticles Encapsulated in Rare Earth Oxide

    Hiroshi Mizoguchi, Shunqin Luo, Masato Sasase, Masaaki Kitano, Hideo Hosono

    The Journal of Physical Chemistry Letters   16 ( 3 )   796 - 801   2025.1

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    Publishing type:Research paper (scientific journal)   Publisher:American Chemical Society (ACS)  

    DOI: 10.1021/acs.jpclett.4c03309

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  • Nonequilibrium Layered PbS Stabilized by Sn Doping: Bipolar Semiconductors with Low Thermal Conductivity

    Mari Hiramatsu, Zhongxu Hu, Sakura Yoshikawa, Zan Yang, Xinyi He, Takayoshi Katase, Jun-ichi Yamaura, Hajime Sagayama, Terumasa Tadano, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    ACS Applied Electronic Materials   2024.11

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acsaelm.4c01572

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  • Effects of nitrogen vacancy sites of oxynitride support on the catalytic activity for ammonia decomposition Reviewed

    Kazuki Miyashita, Kiya Ogasawara, Masayoshi Miyazaki, Hitoshi Abe, Yasuhiro Niwa, Hideki Kato, Hideo Hosono, Masaaki Kitano

    NPG Asia Materials   2024.10

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41427-024-00572-6

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  • Simultaneous Realization of Single-Crystal-Like Electron Transport and Strong Phonon Scattering in Polycrystalline SrTiO3–xHx

    Takayoshi Katase, Seiya Nomoto, Xinyi He, Suguru Kitani, Takashi Honda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    ACS Applied Electronic Materials   6 ( 10 )   7424 - 7429   2024.9

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    Publishing type:Research paper (scientific journal)   Publisher:American Chemical Society (ACS)  

    DOI: 10.1021/acsaelm.4c01306

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  • Size-Dependent Isovalent Impurity Doping for Ambipolar Control in Cu3N

    Kosuke Matsuzaki, Chen-Wei Chang, Teruya Nagafuji, Naoki Tsunoda, Yu Kumagai, Kenji Nomura, Fumiyasu Oba, Hideo Hosono

    Journal of the American Chemical Society   146 ( 35 )   24630 - 24637   2024.8

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    Publishing type:Research paper (scientific journal)   Publisher:American Chemical Society (ACS)  

    DOI: 10.1021/jacs.4c08579

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  • Ammonia Synthesis over Ruthenium Supported on Metastable Perovskite Oxyhydrides BaREO2H (RE = Y, Sc) Prepared by Mechanochemical Method

    Shun Sato, Masayoshi Miyazaki, Satoru Matsuishi, Hideo Hosono, Masaaki Kitano

    Advanced Energy Materials   2024.8

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    Publishing type:Research paper (scientific journal)   Publisher:Wiley  

    Abstract

    Oxyhydrides have attracted attention as materials with various unique properties derived from lattice hydride ions (H). However, their instability makes synthesis by conventional thermal synthesis methods difficult, so an appropriate synthesis strategy is required. Here, the mechanochemical synthesis of perovskite oxyhydrides BaREO2H (RE = Y, Sc) for catalyst applications is reported. The formation of BaYO2H is known to be thermodynamically unstable; however, a mechanochemical process that inevitably proceeds under non‐equilibrium conditions enables the synthesis of such a metastable oxyhydride material without any heat treatment. Furthermore, BaScO2H, which is typically obtained at very high temperatures (1000 °C) and pressure (&gt;4 GPa), is successfully synthesized at room temperature by the mechanochemical method. The ammonia synthesis reaction over these oxyhydrides supporting Ru is significantly enhanced at low temperatures, and the ammonia synthesis rates are significantly higher than conventional oxide‐supported Ru catalysts. The mechanochemically synthesized BaREO2H has many anionic electrons with low work function at the site of H vacancies, which enables strong electron donation to Ru and the storage of excess hydrogen adatoms from the Ru surface that results in high catalytic performance.

    DOI: 10.1002/aenm.202402353

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    Other Link: https://onlinelibrary.wiley.com/doi/pdf/10.1002/aenm.202402353

  • Quadrupling the depairing current density in the iron-based superconductor SmFeAsO1–xHx

    Masashi Miura, Serena Eley, Kazumasa Iida, Kota Hanzawa, Jumpei Matsumoto, Hidenori Hiramatsu, Yuki Ogimoto, Takumi Suzuki, Tomoki Kobayashi, Toshinori Ozaki, Hodaka Kurokawa, Naoto Sekiya, Ryuji Yoshida, Takeharu Kato, Tatsunori Okada, Hiroyuki Okazaki, Tetsuya Yamaki, Jens Hänisch, Satoshi Awaji, Atsutaka Maeda, Boris Maiorov, Hideo Hosono

    Nature Materials   2024.7

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    Publishing type:Research paper (scientific journal)   Publisher:Springer Science and Business Media LLC  

    Abstract

    Iron-based 1111-type superconductors display high critical temperatures and relatively high critical current densities Jc. The typical approach to increasing Jc is to introduce defects to control dissipative vortex motion. However, when optimized, this approach is theoretically predicted to be limited to achieving a maximum Jc of only ∼30% of the depairing current density Jd, which depends on the coherence length and the penetration depth. Here we dramatically boost Jc in SmFeAsO1–xHx films using a thermodynamic approach aimed at increasing Jd and incorporating vortex pinning centres. Specifically, we reduce the penetration depth, coherence length and critical field anisotropy by increasing the carrier density through high electron doping using H substitution. Remarkably, the quadrupled Jd reaches 415 MA cm–2, a value comparable to cuprates. Finally, by introducing defects using proton irradiation, we obtain high Jc values in fields up to 25 T. We apply this method to other iron-based superconductors and achieve a similar enhancement of current densities.

    DOI: 10.1038/s41563-024-01952-7

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    Other Link: https://www.nature.com/articles/s41563-024-01952-7

  • Wide-Gap p-Type Layered Oxychalcogenides AE2CuInO3Ch (AE: Alkaline Earth; Ch: Chalcogen): Unusually Low Residual Carrier Concentration and Green-to-Red Emission Reviewed

    Xinyi He, Tatsuya Cho, Takayoshi Katase, Kota Hanzawa, Suguru Kitani, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    Chemistry of Materials   2024.6

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1021/acs.chemmater.4c00724

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  • Discovery of Self‐Assembled 2D Ru/Si Superlattices Boosting Hydrogen Evolution

    Weizheng Cai, Xinyi He, Tian‐Nan Ye, Xinmeng Hu, Chuanlong Liu, Masato Sasase, Masaaki Kitano, Toshio Kamiya, Hideo Hosono, Jiazhen Wu

    Small   2024.6

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    Publishing type:Research paper (scientific journal)   Publisher:Wiley  

    Abstract

    2D heterostructuring is a versatile methodology for designing nanoarchitecture catalytic systems that allow for reconstruction and modulation of interfaces and electronic structures. However, catalysts with such structures are extremely scarce due to limited synthetic strategies. Here, a highly ordered 2D Ru/Si/Ru/Si… nano‐heterostructures (RSHS) is reported by acid etching of the LaRuSi electride. RSHS shows a superior electrocatalytic activity for hydrogen evolution with an overpotential of 14 mV at 10 mA cm−2 in alkaline media. Both experimental analyses and first‐principles calculations demonstrate that the electronic states of Ru can be tuned by strong interactions of the interfacial Ru–Si, leading to an optimized hydrogen adsorption energy. Moreover, due to the synergistic effect of Ru and Si, the energy barrier of water dissociation is significantly reduced. The well‐organized superlattice structure will provide a paradigm for construction of efficient catalysts with tunable electronic states and dual active sites.

    DOI: 10.1002/smll.202402357

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  • CN22– Vacancies Enhance Ammonia Synthesis over Air-Durable Alkaline Earth Metal Cyanamide-Supported Cobalt Catalysts

    Yihao Jiang, Masayoshi Miyazaki, Kazuki Miyashita, Masato Sasase, Kazuhisa Kishida, Hideo Hosono, Masaaki Kitano

    ACS Catalysis   14 ( 8 )   6349 - 6357   2024.4

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    Publishing type:Research paper (scientific journal)   Publisher:American Chemical Society (ACS)  

    DOI: 10.1021/acscatal.4c00830

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  • Ammonia decomposition mediated at nitrogen vacancies on NaCl-type binary metal nitrides supporting transition metal nanoparticles

    Masayoshi Miyazaki, Kiya Ogasawara, Yousuke Takekoshi, Kazuki Miyashita, Hitoshi Abe, Yasuhiro Niwa, Hideo Hosono, Masaaki Kitano

    Chemical Communications   2024

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    Publishing type:Research paper (scientific journal)   Publisher:Royal Society of Chemistry (RSC)  

    Nitrogen vacancies formed on NaCl-type binary transition metal nitrides and ammonia decomposition activity employing nitrides as supports can be understood in terms of the ionic radii of the metal cations.

    DOI: 10.1039/d4cc02250e

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  • Inverse‐Perovskite Ba3BO (B = Si and Ge) as a High Performance Environmentally Benign Thermoelectric Material with Low Lattice Thermal Conductivity Reviewed

    Xinyi He, Shigeru Kimura, Takayoshi Katase, Terumasa Tadano, Satoru Matsuishi, Makoto Minohara, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya

    Advanced Science   - 2307058   2023.12

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/advs.202307058

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  • Exploration of heterogeneous catalyst for molecular hydrogen ortho‐para conversion

    Hideki Abe, Hiroshi Mizoguchi, Ryuto Eguchi, Hideo Hosono

    Exploration   2023.12

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    Publishing type:Research paper (scientific journal)   Publisher:Wiley  

    Abstract

    Molecular hydrogen (H2) ortho‐para conversion (O/P conversion) proceeds slowly at low temperatures accompanying a heat release. Thus, catalysts for accelerating this conversion rate are highly demanded in terms of the storage and utilization of liquid H2. The catalysts for this purpose are experimentally screened by examining a broad range of materials covering magnetic, non‐magnetic, metallic, and nonmetallic oxides. The primary conclusions obtained are summarized below. (1) active materials are required to be non‐metallic and to bear the cations with ionic radii smaller than the bond length of H2. (2) Metallic materials have almost no activity irrespective of with or without magnetism (3) The activity of materials belonging to (1) is largely enhanced when the constituting cation has a magnetic moment. In addition, there is a class of materials for which the activity is distinctly enhanced just upon substitution by the foreign ions.

    DOI: 10.1002/exp.20230040

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  • CeNix Alloys as Catalysts for Ammonia Synthesis: Insights on Ni–CeN Surface Layer Formation and Its Impact

    Javier Arroyo-Caire, Yihao Jiang, Manuel Antonio Diaz-Perez, Mayra Anabel Lara-Angulo, Masayoshi Miyazaki, Juan Carlos Serrano-Ruiz, Masaaki Kitano, Hideo Hosono

    ACS Catalysis   15715 - 15724   2023.11

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    Publishing type:Research paper (scientific journal)   Publisher:American Chemical Society (ACS)  

    DOI: 10.1021/acscatal.3c03654

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  • BaTiO3–xNy: Highly Basic Oxide Catalyst Exhibiting Coupling of Electrons at Oxygen Vacancies with Substituted Nitride Ions

    Masayoshi Miyazaki, Hiroshi Saito, Kiya Ogasawara, Masaaki Kitano, Hideo Hosono

    Journal of the American Chemical Society   145 ( 48 )   25976 - 25982   2023.11

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    Publishing type:Research paper (scientific journal)   Publisher:American Chemical Society (ACS)  

    DOI: 10.1021/jacs.3c10727

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  • Development of a highly stable nickel-foam-based boron monosulfide–graphene electrocatalyst with a high current density for the oxygen evolution reaction

    Linghui Li, Norinobu Watanabe, Cheng Jiang, Akiyasu Yamamoto, Takeshi Fujita, Masashi Miyakawa, Takashi Taniguchi, Hideo Hosono, Takahiro Kondo

    Science and Technology of Advanced Materials   24 ( 1 )   2023.11

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    DOI: 10.1080/14686996.2023.2277681

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  • Ammonia Cracking Catalyzed by Ni Nanoparticles Confined in the Framework of CeO2 Support

    Hiroshi Mizoguchi, Yuta Osawa, Masato Sasase, Naoki Ohashi, Masaaki Kitano, Hideo Hosono

    The Journal of Physical Chemistry Letters   9516 - 9520   2023.10

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    DOI: 10.1021/acs.jpclett.3c02446

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  • Barium Oxynitride Electride as Highly Enhanced Promotor for Ruthenium Catalyst in Ammonia Synthesis: Comparative Study with Barium Oxide

    Jiang Li, Yihao Jiang, Zhujun Zhang, Masatake Tsuji, Masayoshi Miyazaki, Masaaki Kitano, Hideo Hosono

    Advanced Energy Materials   13 ( 45 )   2023.10

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    Abstract

    Barium oxide is a conventional promoter for various transition‐metal (TM) catalysts in ammonia synthesis. Ba‐promoted Ru catalysts are widely used for ammonia synthesis under mild reaction conditions. However, the promotion mechanism, including the active factor, remains unclear. In this study, the excellent promotion effect of barium oxynitride is reported, which creates anionic electrons in the lattice, forming an electride (BaOxNy:ez) with the same rocksalt structure as BaO. The BaOxNy:ez enhances the ammonia synthesis activity of the supported Ru catalyst by 40–100 fold compared with the BaO promotor. This study reveals that a low‐work‐function electron formed in the BaO lattice plays a pivotal role in the electronic promotion effect in catalytic ammonia synthesis, suggesting that BaOxNy:ez formed near the surface during the ammonia synthesis reaction is an active species for the promotion effect of conventional BaO.

    DOI: 10.1002/aenm.202302424

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  • Multiple reaction pathway on alkaline earth imide supported catalysts for efficient ammonia synthesis

    Zichuang Li, Yangfan Lu, Jiang Li, Miao Xu, Yanpeng Qi, Sang-Won Park, Masaaki Kitano, Hideo Hosono, Jie-Sheng Chen, Tian-Nan Ye

    Nature Communications   14 ( 1 )   2023.10

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    Abstract

    The tunability of reaction pathways is required for exploring efficient and low cost catalysts for ammonia synthesis. There is an obstacle by the limitations arising from scaling relation for this purpose. Here, we demonstrate that the alkali earth imides (AeNH) combined with transition metal (TM = Fe, Co and Ni) catalysts can overcome this difficulty by utilizing functionalities arising from concerted role of active defects on the support surface and loaded transition metals. These catalysts enable ammonia production through multiple reaction pathways. The reaction rate of Co/SrNH is as high as 1686.7 mmol·gCo−1·h−1 and the TOFs reaches above 500 h−1 at 400 °C and 0.9 MPa, outperforming other reported Co-based catalysts as well as the benchmark Cs-Ru/MgO catalyst and industrial wüstite-based Fe catalyst under the same reaction conditions. Experimental and theoretical results show that the synergistic effect of nitrogen affinity of 3d TMs and in-situ formed NH2− vacancy of alkali earth imides regulate the reaction pathways of the ammonia production, resulting in distinct catalytic performance different from 3d TMs. It was thus demonstrated that the appropriate combination of metal and support is essential for controlling the reaction pathway and realizing highly active and low cost catalysts for ammonia synthesis.

    DOI: 10.1038/s41467-023-42050-7

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  • A 2D Ba2N Electride for Transition Metal-Free N2 Dissociation under Mild Conditions

    Zhujun Zhang, Yihao Jiang, Jiang Li, Masayoshi Miyazaki, Masaaki Kitano, Hideo Hosono

    Journal of the American Chemical Society   2023.10

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    DOI: 10.1021/jacs.3c09362

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  • Topological insulator as an efficient catalyst for oxidative carbonylation of amines

    Jiang Li, Jiazhen Wu, Sang-won Park, Masato Sasase, Tian-Nan Ye, Yangfan Lu, Masayoshi Miyazaki, Toshiharu Yokoyama, Tomofumi Tada, Masaaki Kitano, Hideo Hosono

    Science Advances   9 ( 38 )   2023.9

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    Topological materials have received much attention because of their robust topological surface states, which can be potentially applied in electronics and catalysis. Here, we show that the topological insulator bismuth selenide functions as an efficient catalyst for the oxidative carbonylation of amines with carbon monoxide and dioxygen to synthesize urea derivatives. For example, the carbonylation of butylamine can be completed over bismuth selenide nanoparticle catalyst in 4 hours at 20°C with a yield of 99%, whereas most noble metal–based catalysts do not function at such a low temperature. Density functional theory calculations further reveal that the topological surface states facilitate the activation of dioxygen through a triplet-to-singlet spin-conversion reaction, in which active oxygen species are formed with a barrier of 0.4 electron volts for the subsequent reactions with amine and carbon monoxide.

    DOI: 10.1126/sciadv.adh9104

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  • Distinctive doping dependence of upper critical field in iron-based superconductor <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>LaFeAsO</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">H</mml:mi><mml:mi>x</mml:mi></mml:msub></mml:mrow></mml:math>

    Shiro Kawachi, Jun-ichi Yamaura, Yoshio Kuramoto, Soshi Iimura, Toshihiro Nomura, Yoshimitsu Kohama, Takashi Sasaki, Masashi Tokunaga, Youichi Murakami, Hideo Hosono

    Physical Review B   108 ( 10 )   2023.9

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    DOI: 10.1103/physrevb.108.l100503

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  • Boron monosulfide as an electrocatalyst for the oxygen evolution reaction

    Linghui Li, Satoshi Hagiwara, Cheng Jiang, Haruki Kusaka, Norinobu Watanabe, Takeshi Fujita, Fumiaki Kuroda, Akiyasu Yamamoto, Masashi Miyakawa, Takashi Taniguchi, Hideo Hosono, Minoru Otani, Takahiro Kondo

    Chemical Engineering Journal   471   144489 - 144489   2023.9

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    DOI: 10.1016/j.cej.2023.144489

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  • Ammonia Decomposition over Water‐Durable Hexagonal BaTiO3−xNy‐Supported Ni Catalysts Reviewed

    Kiya Ogasawara, Masayoshi Miyazaki, Kazuki Miyashita, Hitoshi Abe, Yasuhiro Niwa, Masato Sasase, Masaaki Kitano, Hideo Hosono

    Advanced Energy Materials   2023.7

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    DOI: 10.1002/aenm.202301286

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  • Ammonia Synthesis over Fe‐Supported Catalysts Mediated by Face‐Sharing Nitrogen Sites in BaTiO3−xNy Oxynitride

    Masayoshi Miyazaki, Keisuke Ikejima, Kiya Ogasawara, Masaaki Kitano, Hideo Hosono

    ChemSusChem   2023.6

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    DOI: 10.1002/cssc.202300551

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  • Boosted Activity of Cobalt Catalysts for Ammonia Synthesis with BaAl2O4–xHy Electrides

    Yihao Jiang, Ryu Takashima, Takuya Nakao, Masayoshi Miyazaki, Yangfan Lu, Masato Sasase, Yasuhiro Niwa, Hitoshi Abe, Masaaki Kitano, Hideo Hosono

    Journal of the American Chemical Society   2023.4

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    DOI: 10.1021/jacs.3c01074

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  • Hydride Anion Substitution Boosts Thermoelectric Performance of Polycrystalline SrTiO 3 via Simultaneous Realization of Reduced Thermal Conductivity and High Electronic Conductivity

    Xinyi He, Seiya Nomoto, Takehito Komatsu, Takayoshi Katase, Terumasa Tadano, Suguru Kitani, Hideto Yoshida, Takafumi Yamamoto, Hiroshi Mizoguchi, Keisuke Ide, Hidenori Hiramatsu, Hitoshi Kawaji, Hideo Hosono, Toshio Kamiya

    Advanced Functional Materials   2023.4

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    DOI: 10.1002/adfm.202213144

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  • Room-Temperature CO2 Hydrogenation to Methanol over Air-Stable hcp-PdMo Intermetallic Catalyst

    Hironobu Sugiyama, Masayoshi Miyazaki, Masato Sasase, Masaaki Kitano, Hideo Hosono

    Journal of the American Chemical Society   145 ( 17 )   9410 - 9416   2023.3

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    DOI: 10.1021/jacs.2c13801

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  • Quasi-Two-Dimensional Intermetallic Electride CeRuSi for Efficient Alkaline Hydrogen Evolution

    Weizheng Cai, Chuan Zhou, Xinmeng Hu, Tiwen Jiao, Yijia Liu, Lei Li, Jiang Li, Masaaki Kitano, Hideo Hosono, Jiazhen Wu

    ACS Catalysis   13 ( 7 )   4752 - 4759   2023.3

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    DOI: 10.1021/acscatal.2c06382

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  • Surface Hydroxyl-Ion Diffusion and Hierarchical Structure of Adsorbed Water on Hydrated Layered Double Hydroxides

    Tomoyuki Yamasaki, Soshi Iimura, Hideo Hosono, Shu Yamaguchi

    The Journal of Physical Chemistry C   127 ( 12 )   6045 - 6053   2023.3

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    DOI: 10.1021/acs.jpcc.3c00275

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  • Electronic Promotion of Methanol Synthesis over Cu-Loaded ZnO-Based Catalysts

    Hironobu Sugiyama, Nobuhiro Nakamura, Satoru Watanabe, Junghwan Kim, Masaaki Kitano, Hideo Hosono

    The Journal of Physical Chemistry Letters   14 ( 5 )   1259 - 1264   2023.1

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    DOI: 10.1021/acs.jpclett.2c03427

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  • Encapsulated C12A7 electride material enables a multistep electron transfer process for cross-coupling reactions

    Bo Dai, Zichuang Li, Miao Xu, Jiang Li, Yangfan Lu, Jiantao Zai, Liuyin Fan, Sang-Won Park, Masato Sasase, Masaaki Kitano, Hideo Hosono, Xin-Hao Li, Tian-Nan Ye, Jie-Sheng Chen

    Journal of Materials Chemistry A   11 ( 24 )   12802 - 12810   2023

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    A multistep electron transfer process is realized over C12A7:e electride composite material. The graphene promotes electron transfer from C12A7:e through surface Pd to the aryl halide substrates, affording a series of cross-coupling reactions.

    DOI: 10.1039/d2ta08899a

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  • Extremely Shallow Valence Band in Lanthanum Trihydride

    Tomoyuki Yamasaki, Soshi Iimura, Junghwan Kim, Hideo Hosono

    Journal of the American Chemical Society   2022.12

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    DOI: 10.1021/jacs.2c10927

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  • High upper critical field (120 T) with small anisotropy of highly hydrogen-substituted SmFeAsO epitaxial film

    Kota Hanzawa, Jumpei Matsumoto, Soshi Iimura, Yoshimitsu Kohama, Hidenori Hiramatsu, Hideo Hosono

    Physical Review Materials   2022.11

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    DOI: 10.1103/PhysRevMaterials.6.L111801

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  • Low-temperature-processable amorphous-oxide-semiconductor-based phosphors for durable light-emitting diodes Reviewed

    Keisuke Ide, Naoto Watanabe, Takayoshi Katase, Masato Sasase, Junghwan Kim, Shigenori Ueda, Koji Horiba, Hiroshi Kumigashira, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    Applied Physics Letters   121 ( 19 )   2022.11

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    DOI: 10.1063/5.0115384

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  • High pressure synthesis, physical properties and electronic structure of monovalent iron compound LaFePH

    Soshi Iimura, Takashi Sasaki, Kota Hanzawa, Satoru Matsuishi, Hideo Hosono

    Journal of Solid State Chemistry   315   123546 - 123546   2022.11

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    DOI: 10.1016/j.jssc.2022.123546

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  • Low-Temperature Methanol Synthesis by a Cu-Loaded LaH2+x Electride

    Hironobu Sugiyama, Takuya Nakao, Masayoshi Miyazaki, Hitoshi Abe, Yasuhiro Niwa, Masaaki Kitano, Hideo Hosono

    ACS Catalysis   12572 - 12581   2022.10

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    DOI: 10.1021/acscatal.2c03662

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  • Hole Concentration Reduction in CuI by Zn Substitution and its Mechanism: Toward Device Applications

    Masatake Tsuji, Soshi Iimura, Junghwan Kim, Hideo Hosono

    ACS Applied Materials &amp; Interfaces   14 ( 29 )   33463 - 33471   2022.7

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    DOI: 10.1021/acsami.2c03673

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  • 18‐Crown‐6 Additive to Enhance Performance and Durability in Solution‐Processed Halide Perovskite Electronics

    Kihyung Sim, Takuya Nakao, Masato Sasase, Soshi Iimura, Junghwan Kim, Hideo Hosono

    Small   2202298 - 2202298   2022.7

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    DOI: 10.1002/smll.202202298

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  • Unique Conduction Band Minimum of Semiconductors Possessing a Zincblende-Type Framework

    Hiroshi Mizoguchi, Sang-Won Park, Takayoshi Katase, Jiahao Yu, Junjie Wang, Hideo Hosono

    Inorganic Chemistry   2022.6

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    DOI: 10.1021/acs.inorgchem.2c00884

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  • Unique Catalytic Mechanism for Ru-Loaded Ternary Intermetallic Electrides for Ammonia Synthesis

    Yutong Gong, Hongchen Li, Jiazhen Wu, Xingyi Song, Xueqing Yang, Xiaobing Bao, Xiao Han, Masaaki Kitano, Junjie Wang, Hideo Hosono

    Journal of the American Chemical Society   144 ( 19 )   8683 - 8692   2022.5

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    DOI: 10.1021/jacs.2c01899

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  • Characteristic Resistive Switching of Rare-Earth Oxyhydrides by Hydride Ion Insertion and Extraction

    Tomoyuki Yamasaki, Ryosei Takaoka, Soshi Iimura, Junghwan Kim, Hidenori Hiramatsu, Hideo Hosono

    ACS Applied Materials &amp; Interfaces   14 ( 17 )   19766 - 19773   2022.5

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    DOI: 10.1021/acsami.2c03483

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  • Design, Synthesis, and Optoelectronic Properties of the High-Purity Phase in Layered AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf) Semiconductors

    Akihiro Shiraishi, Shigeru Kimura, Xinyi He, Naoto Watanabe, Takayoshi Katase, Keisuke Ide, Makoto Minohara, Kosuke Matsuzaki, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya

    Inorganic Chemistry   61 ( 17 )   6650 - 6659   2022.5

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    DOI: 10.1021/acs.inorgchem.2c00604

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  • Degenerated Hole Doping and Ultra-Low Lattice Thermal Conductivity in Polycrystalline SnSe by Nonequilibrium Isovalent Te Substitution Reviewed

    Xinyi He, Haoyun Zhang, Takumi Nose, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    ADVANCED SCIENCE   9 ( 13 )   2022.5

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    DOI: 10.1002/advs.202105958

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  • High-Mobility Metastable Rock-Salt Type (Sn,Ca)Se Thin Film Stabilized by Direct Epitaxial Growth on a YSZ (111) Single-Crystal Substrate

    Xinyi He, Jinshuai Chen, Takayoshi Katase, Makoto Minohara, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya

    ACS Applied Materials &amp; Interfaces   14 ( 16 )   18682 - 18689   2022.4

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    DOI: 10.1021/acsami.2c01464

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  • Hexagonal BaTiO(3–x)Hx Oxyhydride as a Water-Durable Catalyst Support for Chemoselective Hydrogenation

    Masayoshi Miyazaki, Kiya Ogasawara, Takuya Nakao, Masato Sasase, Masaaki Kitano, Hideo Hosono

    Journal of the American Chemical Society   144 ( 14 )   6453 - 6464   2022.4

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    DOI: 10.1021/jacs.2c00976

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  • Electronic and Lattice Thermal Conductivity Switching by 3D-2D Crystal Structure Transition in Nonequilibrium (Pb1-xSnx)Se Reviewed

    Yusaku Nishimura, Xinyi He, Takayoshi Katase, Terumasa Tadano, Keisuke Ide, Suguru Kitani, Kota Hanzawa, Shigenori Ueda, Hidenori Hiramatsu, Hitoshi Kawaji, Hideo Hosono, Toshio Kamiya

    ADVANCED ELECTRONIC MATERIALS   2022.3

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    DOI: 10.1002/aelm.202200024

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  • Room-Temperature Fast H Conduction in Oxygen-Substituted Lanthanum Hydride

    Keiga Fukui, Soshi Iimura, Albert Iskandarov, Tomofumi Tada, Hideo Hosono

    Journal of the American Chemical Society   144 ( 4 )   1523 - 1527   2022.2

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    DOI: 10.1021/jacs.1c11353

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  • High‐Performance P‐Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D–3D Core–Shell Structure

    Junghwan Kim, Yu‐Shien Shiah, Kihyung Sim, Soshi Iimura, Katsumi Abe, Masatake Tsuji, Masato Sasase, Hideo Hosono

    Advanced Science   9 ( 5 )   2104993 - 2104993   2022.2

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    DOI: 10.1002/advs.202104993

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  • Low Residual Carrier Density and High In-Grain Mobility in Polycrystalline Zn3N2Films on a Glass Substrate Reviewed

    Li, K., Shimizu, A., He, X., Ide, K., Hanzawa, K., Matsuzaki, K., Katase, T., Hiramatsu, H., Hosono, H., Zhang, Q., Kamiya, T.

    ACS Applied Electronic Materials   4 ( 4 )   2022

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    DOI: 10.1021/acsaelm.2c00181

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  • Nanostructure-induced L10-ordering of twinned single-crystals in CoPt ferromagnetic nanowires

    Ryo Toyama, Shiro Kawachi, Jun-ichi Yamaura, Takeshi Fujita, Youichi Murakami, Hideo Hosono, Yutaka Majima

    Nanoscale Advances   4 ( 24 )   5270 - 5280   2022

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    Nanostructure-induced L10-ordering of twinned single-crystals in CoPt ferromagnetic nanowires on Si/SiO2 substrates is demonstrated, where nanostructure-induced L10-ordering is driven by ultrasmall 10 nm-scale curvature radii of the nanowires.

    DOI: 10.1039/d2na00626j

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  • Breaking of Thermopower-Conductivity Trade-Off in LaTiO3 Film around Mott Insulator to Metal Transition

    Takayoshi Katase, Xinyi He, Terumasa Tadano, Jan M. Tomczak, Takaki Onozato, Keisuke Ide, Bin Feng, Tetsuya Tohei, Hidenori Hiramatsu, Hiromichi Ohta, Yuichi Ikuhara, Hideo Hosono, Toshio Kamiya

    ADVANCED SCIENCE   8 ( 23 )   2021.12

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    DOI: 10.1002/advs.202102097

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  • Large phonon drag thermopower boosted by massive electrons and phonon leaking in LaAlO<inf>3</inf>/LaNiO<inf>3</inf>/LaAlO<inf>3</inf>heterostructure

    Masatoshi Kimura, Xinyi He, Takayoshi Katase, Terumasa Tadano, Jan M. Tomczak, Makoto Minohara, Ryotaro Aso, Hideto Yoshida, Keisuke Ide, Shigenori Ueda, Hidenori Hiramatsu, Hiroshi Kumigashira, Hideo Hosono, Toshio Kamiya

    Nano Letters   21 ( 21 )   9240 - 9246   2021.11

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    DOI: 10.1021/acs.nanolett.1c03143

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  • Mobility–stability trade-off in oxide thin-film transistors

    Yu-Shien Shiah, Kihyung Sim, Yuhao Shi, Katsumi Abe, Shigenori Ueda, Masato Sasase, Junghwan Kim, Hideo Hosono

    Nature Electronics   4 ( 11 )   800 - 807   2021.11

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    DOI: 10.1038/s41928-021-00671-0

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  • Molecular dynamics study on the co-doping effect of Al2O3 and fluorine to reduce Rayleigh scattering of silica glass

    Shingo Urata, Nobuhiro Nakamura, Tomofumi Tada, Hideo Hosono

    Journal of the American Ceramic Society   104 ( 10 )   5001 - 5015   2021.10

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    DOI: 10.1111/jace.17774

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  • Comment on Weber et al. Mayenite-Based Electride C12A7e−: A Reactivity and Stability Study. Catalysts 2021, 11, 334

    Yasunori Inoue, Masaaki Kitano, Hideo Hosono

    Catalysts   11 ( 10 )   1154 - 1154   2021.9

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    In 2012, we reported that C12A7 electride (C12A7: e−) significantly promotes the catalytic activity of Ru nanoparticles for ammonia synthesis through the electron donation from the C12A7: e− with a low work function (2.4 eV) to Ru [...]

    DOI: 10.3390/catal11101154

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  • Ammonia Decomposition over CaNH-Supported Ni Catalysts via an NH2–-Vacancy-Mediated Mars–van Krevelen Mechanism

    Kiya Ogasawara, Takuya Nakao, Kazuhisa Kishida, Tian-Nan Ye, Yangfan Lu, Hitoshi Abe, Yasuhiro Niwa, Masato Sasase, Masaaki Kitano, Hideo Hosono

    ACS Catalysis   11 ( 17 )   11005 - 11015   2021.9

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    DOI: 10.1021/acscatal.1c01934

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  • Dissociative and Associative Concerted Mechanism for Ammonia Synthesis over Co-Based Catalyst

    Tian-Nan Ye, Sang-Won Park, Yangfan Lu, Jiang Li, Jiazhen Wu, Masato Sasase, Masaaki Kitano, Hideo Hosono

    Journal of the American Chemical Society   143 ( 32 )   12857 - 12866   2021.8

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    DOI: 10.1021/jacs.1c06657

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  • A View on Formation Gap in Transition Metal Hydrides and Its Collapse Reviewed

    Hiroshi Mizoguchi, Sang-Won Park, Hideo Hosono

    Journal of the American Chemical Society   143 ( 30 )   11345 - 11348   2021.8

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    DOI: 10.1021/jacs.1c06307

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  • Ion Substitution Effect on Defect Formation in Two-Dimensional Transition Metal Nitride Semiconductors, AETiN(2) (AE = Ca, Sr, and Ba)

    Xinyi He, Takayoshi Katase, Keisuke Ide, Hideo Hosono, Toshio Kamiya

    INORGANIC CHEMISTRY   60 ( 14 )   10227 - 10234   2021.7

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    DOI: 10.1021/acs.inorgchem.1c00526

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  • High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °c: Roles of Hydrogen and Excess Oxygen in the Al2O3Dielectric Film

    Cheol Hee Choi, Taikyu Kim, Shigenori Ueda, Yu-Shien Shiah, Hideo Hosono, Junghwan Kim, Jae Kyeong Jeong

    ACS Applied Materials and Interfaces   13 ( 24 )   28451 - 28461   2021.6

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    DOI: 10.1021/acsami.1c04210

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  • C2 Vacancy-Mediated N2 Activation over Ni-Loaded Rare-Earth Dicarbides for Ammonia Synthesis

    Yiliguma, Sang-Won Park, Jiang Li, Masato Sasase, Masaaki Kitano, Hideo Hosono

    ACS Catalysis   11 ( 12 )   7595 - 7603   2021.6

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    DOI: 10.1021/acscatal.1c01646

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  • Electron-Deficient-Type Electride Ca5Pb3: Extension of Electride Chemical Space

    Kun Li, Yutong Gong, Junjie Wang, Hideo Hosono

    Journal of the American Chemical Society   143 ( 23 )   8821 - 8828   2021.6

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    DOI: 10.1021/jacs.1c03278

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  • Crystal and electronic structure engineering of tin monoxide by external pressure

    Kun Li, Junjie Wang, Vladislav A. Blatov, Yutong Gong, Naoto Umezawa, Tomofumi Tada, Hideo Hosono, Artem R. Oganov

    Journal of Advanced Ceramics   10 ( 3 )   565 - 577   2021.6

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    DOI: 10.1007/s40145-021-0458-1

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  • Local Structure Properties of Hydrogenated and Nonhydrogenated Amorphous In-Ga-Zn-O Thin Films Using XAFS and High-Energy XRD

    Loku Singgappulige Rosantha Kumara, Kyohei Ishikawa, Keisuke Ide, Hideo Hosono, Toshio Kamiya, Osami Sakata

    JOURNAL OF PHYSICAL CHEMISTRY C   125 ( 24 )   13619 - 13628   2021.6

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  • Electronic and crystal structures of LnFeAsO<inf>1-x </inf>H<inf>x </inf>(Ln = La, Sm) studied by x-ray absorption spectroscopy, x-ray emission spectroscopy, and x-ray diffraction (part I: Carrier-doping dependence)

    Yoshiya Yamamoto, Hitoshi Yamaoka, Takayuki Uozumi, Atsushi Hariki, Seiichiro Onari, Jun Ichi Yamaura, Kenji Ishii, Takuma Kawai, Masahiro Yoshida, Munetaka Taguchi, Kensuke Kobayashi, Jung Fu Lin, Nozomu Hiraoka, Hirofumi Ishii, Ku Ding Tsuei, Hiroshi Okanishi, Soshi Iimura, Satoru Matsuishi, Hideo Hosono, Jun'Ichiro Mizuki

    Journal of Physics Condensed Matter   33 ( 25 )   2021.6

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    DOI: 10.1088/1361-648X/abf9b9

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  • B5N3and B7N5Monolayers with High Carrier Mobility and Excellent Optical Performance

    Jingcheng Qi, Shiyao Wang, Junjie Wang, Naoto Umezawa, Vladislav A. Blatov, Hideo Hosono

    Journal of Physical Chemistry Letters   12 ( 20 )   4823 - 4832   2021.5

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    DOI: 10.1021/acs.jpclett.1c00913

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  • High-Entropy van der Waals Materials Formed from Mixed Metal Dichalcogenides, Halides, and Phosphorus Trisulfides

    Tianping Ying, Tongxu Yu, Yu-Shien Shiah, Changhua Li, Jiang Li, Yanpeng Qi, Hideo Hosono

    Journal of the American Chemical Society   143 ( 18 )   7042 - 7049   2021.5

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    DOI: 10.1021/jacs.1c01580

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  • Origins of the coloration from structure and valence state of bismuth oxide glasses

    Akira Saitoh, Katsuki Hayashi, Kota Hanzawa, Shigenori Ueda, Shiro Kawachi, Jun-ichi Yamaura, Keisuke Ide, Junghwan Kim, Gregory Tricot, Satoru Matsuishi, Kazuki Mitsui, Tatsuki Shimizu, Masami Mori, Hideo Hosono, Hidenori Hiramatsu

    JOURNAL OF NON-CRYSTALLINE SOLIDS   560   2021.5

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    DOI: 10.1016/j.jnoncrysol.2021.120720

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  • Advances in Materials and Applications of Inorganic Electrides

    Hideo Hosono, Masaaki Kitano

    Chemical Reviews   121 ( 5 )   3121 - 3185   2021.3

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    DOI: 10.1021/acs.chemrev.0c01071

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  • Stabilization Factor of Anion-Excess Fluorite Phase for Fast Anion Conduction

    Keiga Fukui, Soshi Iimura, Junjie Wang, Tomofumi Tada, Takashi Honda, Kazutaka Ikeda, Toshiya Otomo, Hideo Hosono

    Chemistry of Materials   33 ( 5 )   1867 - 1874   2021.3

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    DOI: 10.1021/acs.chemmater.1c00064

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  • Reversible 3D-2D structural phase transition and giant electronic modulation in nonequilibrium alloy semiconductor, lead-tin-selenide

    Takayoshi Katase, Yudai Takahashi, Xinyi He, Terumasa Tadano, Keisuke Ide, Hideto Yoshida, Shiro Kawachi, Jun-ichi Yamaura, Masato Sasase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    SCIENCE ADVANCES   7 ( 12 )   2021.3

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    DOI: 10.1126/sciadv.abf2725

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  • 2D-3D structural phase transition and giant electronic property modulation of non-equilibrium (Pb1-xSnx)Se thin films

    Takahashi Yudai, Katase Takayoshi, He Xinyi, Tadano Terumasa, Ide Keisuke, Yoshida Hideto, Kawachi Shiro, Yamaura Junichi, Sasase Masato, Hiramatsu Hidenori, Hosono Hideo, Kamiya Toshio

    JSAP Annual Meetings Extended Abstracts   2021.1   1300 - 1300   2021.2

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    DOI: 10.11470/jsapmeeting.2021.1.0_1300

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  • Double Charge Polarity Switching in Sb-Doped SnSe with Switchable Substitution Sites

    Chihiro Yamamoto, Xinyi He, Takayoshi Katase, Keisuke Ide, Yosuke Goto, Yoshikazu Mizuguchi, Akane Samizo, Makoto Minohara, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    ADVANCED FUNCTIONAL MATERIALS   31 ( 8 )   2021.2

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    DOI: 10.1002/adfm.202008092

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  • Ship-in-a-Bottle Synthesis of High Concentration of N2 Molecules in a Cage-Structured Electride

    Takuya Nakao, Kiya Ogasawara, Masaaki Kitano, Satoru Matsuishi, Peter V. Sushko, Hideo Hosono

    The Journal of Physical Chemistry Letters   1295 - 1299   2021.1

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    DOI: 10.1021/acs.jpclett.0c03800

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  • Origin of Metallic Nature of Na3N

    Hiroshi Mizoguchi, Sang-Won Park, Takayoshi Katase, Grigori V. Vazhenin, Junghwan Kim, Hideo Hosono

    Journal of the American Chemical Society   143 ( 1 )   69 - 72   2021.1

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    DOI: 10.1021/jacs.0c11047

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  • How fluorine minimizes density fluctuations of silica glass: Molecular dynamics study with machine-learning assisted force-matching potential

    Shingo Urata, Nobuhiro Nakamura, Kento Aiba, Tomofumi Tada, Hideo Hosono

    Materials and Design   197   2021.1

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    DOI: 10.1016/j.matdes.2020.109210

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  • Why Ca2NH works as an efficient and stable support of Ru catalyst in ammonia synthesis

    Masaaki Kitano, Kyosuke Yamagata, Hideo Hosono

    Research on Chemical Intermediates   47 ( 1 )   235 - 248   2021.1

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    DOI: 10.1007/s11164-020-04332-3

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  • Ruthenium Catalysts Promoted by Lanthanide Oxyhydrides with High Hydride‐Ion Mobility for Low‐Temperature Ammonia Synthesis

    Kayato Ooya, Jiang Li, Keiga Fukui, Soshi Iimura, Takuya Nakao, Kiya Ogasawara, Masato Sasase, Hitoshi Abe, Yasuhiro Niwa, Masaaki Kitano, Hideo Hosono

    Advanced Energy Materials   11 ( 4 )   2003723 - 2003723   2021.1

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    DOI: 10.1002/aenm.202003723

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  • Understanding and controlling electronic defects in amorphous oxide semiconductor

    Keisuke Ide, Hideo Hosono, Toshio Kamiya

    Digest of Technical Papers - SID International Symposium   52 ( 1 )   97 - 99   2021

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    DOI: 10.1002/sdtp.14389

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  • Crystalline boron monosulfide nanosheets with tunable bandgaps

    Haruki Kusaka, Ryota Ishibiki, Masayuki Toyoda, Takeshi Fujita, Tomoharu Tokunaga, Akiyasu Yamamoto, Masashi Miyakawa, Kyosuke Matsushita, Keisuke Miyazaki, Linghui Li, Satish Laxman Shinde, Mariana S. L. Lima, Takeaki Sakurai, Eiji Nishibori, Takuya Masuda, Koji Horiba, Kenji Watanabe, Susumu Saito, Masahiro Miyauchi, Takashi Taniguchi, Hideo Hosono, Takahiro Kondo

    Journal of Materials Chemistry A   9 ( 43 )   24631 - 24640   2021

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    Two-dimensional boron monosulfide nanosheets are realized by physical exfoliation of rhombohedral boron monosulfide.

    DOI: 10.1039/d1ta03307g

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  • Facile Synthesis of Ti2AC (A = Zn, Al, In, and Ga) MAX Phases by Hydrogen Incorporation into Crystallographic Voids

    Yangfan Lu, Mohammad Khazaei, Xinmeng Hu, Rasoul Khaledialidusti, Masato Sasase, Jiazhen Wu, Hideo Hosono

    Journal of Physical Chemistry Letters   11245 - 11251   2021

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    DOI: 10.1021/acs.jpclett.1c03149

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  • Solid solution for catalytic ammonia synthesis from nitrogen and hydrogen gases at 50 °C

    Masashi Hattori, Shinya Iijima, Takuya Nakao, Hideo Hosono, Michikazu Hara

    Nature Communications   11 ( 1 )   2020.12

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    DOI: 10.1038/s41467-020-15868-8

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  • Efficient Ammonia Synthesis over Phase-Separated Nickel-Based Intermetallic Catalysts Reviewed

    Tian-Nan Ye, Yangfan Lu, Yasukazu Kobayashi, Jiang Li, Sang-Won Park, Masato Sasase, Masaaki Kitano, Hideo Hosono

    JOURNAL OF PHYSICAL CHEMISTRY C   124 ( 52 )   28589 - 28595   2020.12

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    DOI: 10.1021/acs.jpcc.0c09590

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  • Strain Engineering at Heterointerfaces: Application to an Iron Pnictide Superconductor, Cobalt-Doped BaFe2As2

    Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

    ACS Applied Materials and Interfaces   12 ( 44 )   50096 - 50104   2020.11

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    DOI: 10.1021/acsami.0c12080

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  • Shallow Valence Band of Rutile GeO2 and P-type Doping

    Christian A. Niedermeier, Keisuke Ide, Takayoshi Katase, Hideo Hosono, Toshio Kamiya

    JOURNAL OF PHYSICAL CHEMISTRY C   124 ( 47 )   25721 - 25728   2020.11

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    DOI: 10.1021/acs.jpcc.0c07757

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  • Higher-order topological crystalline insulating phase and quantized hinge charge in topological electride apatite

    Motoaki Hirayama, Ryo Takahashi, Satoru Matsuishi, Hideo Hosono, Shuichi Murakami

    PHYSICAL REVIEW RESEARCH   2 ( 4 )   2020.10

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    DOI: 10.1103/PhysRevResearch.2.043131

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  • Electronic defects in amorphous oxide semiconductor and recent development

    Keisuke Ide, Hideo Hosono, Toshio Kamiya

    Proceedings of AM-FPD 2020 - 27th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials   127 - 130   2020.9

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    DOI: 10.23919/AM-FPD49417.2020.9224483

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  • Coexistence of magnetism and superconductivity in thin film of the Fe-based superconductor Ba1-xLaxFe2As2 Reviewed

    Yildirhan Oner, Cihat Boyraz, Hidenori Hiramatsu, Takayoshi Katase, Hideo Hosono

    J. Phys.: Condens. Mater   32   485804   2020.9

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    DOI: 10.1088/1361-648X/aba922

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  • Computational prediction of boron-based MAX phases and MXene derivatives

    Nanxi Miao, Junjie Wang, Yutong Gong, Jiazhen Wu, Haiyang Niu, Shiyao Wang, Kun Li, Artem R. Oganov, Tomofumi Tada, Hideo Hosono

    Chemistry of Materials   32 ( 16 )   6947 - 6957   2020.8

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    DOI: 10.1021/acs.chemmater.0c02139

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  • Contribution of Nitrogen Vacancies to Ammonia Synthesis over Metal Nitride Catalysts Reviewed

    Tian-Nan Ye, Sang-Won Park, Yangfan Lu, Jiang Li, Masato Sasase, Masaaki Kitano, Hideo Hosono

    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY   142 ( 33 )   14374 - 14383   2020.8

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    DOI: 10.1021/jacs.0c06624

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  • Air-Stable Calcium Cyanamide-Supported Ruthenium Catalyst for Ammonia Synthesis and Decomposition Reviewed

    Kazuhisa Kishida, Masaaki Kitano, Masato Sasase, Peter V. Sushko, Hitoshi Abe, Yasuhiro Niwa, Kiya Ogasawara, Toshiharu Yokoyama, Hideo Hosono

    ACS Applied Energy Materials   3 ( 7 )   6573 - 6582   2020.7

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    DOI: 10.1021/acsaem.0c00754

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  • Critical temperature and critical current density of hydrogen-doped SmFeAsO epitaxial films fabricated by thermal annealing with binary hydrides

    Hidenori Hiramatsu, Hidenori Hiramatsu, Jumpei Matsumoto, Hideo Hosono

    Applied Physics Express   13 ( 7 )   2020.7

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    DOI: 10.35848/1882-0786/ab998f

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  • Hydrogen Boride Sheets as Reductants and the Formation of Nanocomposites with Metal Nanoparticles Reviewed

    Shin-ichi Ito, Toru Hirabayashi, Ryota Ishibiki, Reiya Kawamura, Taiga Goto, Takeshi Fujita, Akira Yamaguchi, Hideo Hosono, Masahiro Miyauchi, Takahiro Kondo

    CHEMISTRY LETTERS   49 ( 7 )   789 - 793   2020.7

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    DOI: 10.1246/cl.200206

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  • Vacancy-enabled N2 activation for ammonia synthesis on an Ni-loaded catalyst Invited Reviewed International journal

    Tian-Nan Ye, Sang-Won Park, Yangfan Lu, Jiang Li, Masato Sasase, Masaaki Kitano, Tomofumi Tada, Hideo Hosono

    Nature   583 ( 15 )   391 - 395   2020.7

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    DOI: 10.1038/s41586-020-2464-9

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  • Potential Interaction of Noble Gas Atoms and Anionic Electrons in Ca2N

    Qin Qin, Biao Wan, Bingmin Yan, Bo Gao, Qingyang Hu, Dongzhou Zhang, Hideo Hosono, Huiyang Gou

    Journal of Physical Chemistry C   124 ( 23 )   12213 - 12219   2020.6

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    DOI: 10.1021/acs.jpcc.0c01543

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  • Toward 2D Magnets in the (MnBi2Te4)(Bi2Te3)n Bulk Crystal

    Jiazhen Wu, Fucai Liu, Can Liu, Yong Wang, Changcun Li, Yangfan Lu, Satoru Matsuishi, Hideo Hosono

    Advanced Materials   32 ( 23 )   2020.6

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    DOI: 10.1002/adma.202001815

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  • Heavily Hydride-ion-doped 1111-type Iron-based Superconductors: Synthesis, Physical Properties and Electronic Structure

    Soshi Iimura, Hideo Hosono

    Journal of the Physical Society of Japan   89 ( 5 )   051006 - 051006   2020.5

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    DOI: 10.7566/jpsj.89.051006

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  • Large power-factor enhancement by breaking thermoelectric trade-off relation in transition metal oxide, LaNiO3

    Higuchi Yuhi, Katase Takayoshi, Terumasa Tadano, Jun Fujioka, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    JSAP Annual Meetings Extended Abstracts   2020.1   3583 - 3583   2020.2

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    DOI: 10.11470/jsapmeeting.2020.1.0_3583

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  • Transition Metal-doped Ru Nanoparticles Loaded on Metal Hydrides for Efficient Ammonia Synthesis from First Principles Reviewed

    Takuya Nakao, Tomofumi Tada, Hideo Hosono

    The Journal of Physical Chemistry C   124 ( 2 )   1529 - 1534   2020.1

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    DOI: 10.1021/acs.jpcc.9b10544

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  • Discovery of hexagonal ternary phase Ti2InB2 and its evolution to layered boride TiB

    Junjie Wang, Tian-Nan Ye, Yutong Gong, Jiazhen Wu, Nanxi Miao, Tomofumi Tada, Hideo Hosono

    Nature Communications   10 ( 1 )   2019.12

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    DOI: 10.1038/s41467-019-10297-8

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  • Palladium-bearing intermetallic electride as an efficient and stable catalyst for Suzuki cross-coupling reactions Reviewed

    Tian-Nan Ye, Yangfan Lu, Zewen Xiao, Jiang Li, Takuya Nakao, Hitoshi Abe, Yasuhiro Niwa, Masaaki Kitano, Tomofumi Tada, Hideo Hosono

    Nature Communications   10 ( 1 )   2019.12

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    <title>Abstract</title>Suzuki cross-coupling reactions catalyzed by palladium are powerful tools for the synthesis of functional organic compounds. Excellent catalytic activity and stability require negatively charged Pd species and the avoidance of metal leaching or clustering in a heterogeneous system. Here we report a Pd-based electride material, Y3Pd2, in which active Pd atoms are incorporated in a lattice together with Y. As evidenced from detailed characterization and density functional theory (DFT) calculations, Y3Pd2 realizes negatively charged Pd species, a low work function and a high carrier density, which are expected to be beneficial for the efficient Suzuki coupling reaction of activated aryl halides with various coupling partners under mild conditions. The catalytic activity of Y3Pd2 is ten times higher than that of pure Pd and the activation energy is lower by nearly 35%. The Y3Pd2 intermetallic electride catalyst also exhibited extremely good catalytic stability during long-term coupling reactions.

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  • Amorphous IGZO TFT with High Mobility of 70 cm2/(V s) via Vertical Dimension Control Using PEALD

    Jiazhen Sheng, TaeHyun Hong, Hyun-Mo Lee, KyoungRok Kim, Masato Sasase, Junghwan Kim, Hideo Hosono, Jin-Seong Park

    ACS Applied Materials and Interfaces   11 ( 43 )   40300 - 40309   2019.10

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    DOI: 10.1021/acsami.9b14310

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  • Superconductivity at 48 K of heavily hydrogen-doped SmFeAsO epitaxial films grown by topotactic chemical reaction using Ca H2 Reviewed

    Jumpei Matsumoto, Kota Hanzawa, Masato Sasase, Silvia Haindl, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono

    Physical Review Materials   3 ( 10 )   103401   2019.10

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    DOI: 10.1103/PhysRevMaterials.3.103401

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  • Particulate Generation on Surface of Iron Selenide Films by Air Exposure

    Hidenori Hiramatsu, Kota Hanzawa, Toshio Kamiya, Hideo Hosono

    Journal of Superconductivity and Novel Magnetism   32 ( 10 )   3047 - 3055   2019.10

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    DOI: 10.1007/s10948-019-5020-9

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  • Tunable Light Emission through the Range 1.8-3.2 eV and p-Type Conductivity at Room Temperature for Nitride Semiconductors, Ca(Mg1- xZn x)2N2 (x = 0-1)

    Masatake Tsuji, Hidenori Hiramatsu, Hideo Hosono

    Inorganic Chemistry   58 ( 18 )   12311 - 12316   2019.9

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    DOI: 10.1021/acs.inorgchem.9b01811

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  • On the Origin of the Negative Thermal Expansion Behavior of YCu Reviewed

    Hiroshi Mizoguchi, Joonho Bang, Takeshi Inoshita, Toshio Kamiya, Hideo Hosono

    Inorganic Chemistry   58 ( 17 )   11819 - 11827   2019.9

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    DOI: 10.1021/acs.inorgchem.9b01988

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  • Performance boosting strategy for perovskite light-emitting diodes

    Kihyung Sim, Taehwan Jun, Joonho Bang, Hayato Kamioka, Junghwan Kim, Hidenori Hiramatsu, Hideo Hosono

    Applied Physics Reviews   6 ( 3 )   2019.9

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    DOI: 10.1063/1.5098871

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  • New crystal structure built from a GeO6-GeO5 polyhedra network with high thermal stability: b-SrGe2O5 Reviewed

    Christian A. Niedermeier, Junichi Yamaura, Jiazhen Wu, Xinyi He, Takayoshi Katase, Hideo Hosono, Toshio Kamiya

    ACS Appl. Electron. Mater.   1   1989 - 1993   2019.9

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  • Symmetric Ambipolar Thin-Film Transistors and High-Gain CMOS-like Inverters Using Environmentally Friendly Copper Nitride Reviewed

    Kosuke Matsuzaki, Takayoshi Katase, Toshio Kamiya, Hideo Hosono

    ACS Appl. Mater. Interfaces   11   35132 - 35137   2019.8

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  • Hydrogen-Insertion-Induced Itinerant Ferromagnetism in Zr2CoH4.8 with Co Chains

    Hiroshi Mizoguchi, Satoru Matsuishi, Sang-Won Park, Hideo Hosono

    The Journal of Physical Chemistry C   123 ( 24 )   14964 - 14968   2019.6

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    DOI: 10.1021/acs.jpcc.9b03793

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  • Quantum dynamics of hydrogen in the iron-based superconductor LaFeAsO0.9 D0.1 measured with inelastic neutron spectroscopy Reviewed

    Jun Ichi Yamaura, Haruhiro Hiraka, Soshi Iimura, Yoshinori Muraba, Joonho Bang, Kazuhiko Ikeuchi, Mitsutaka Nakamura, Yasuhiro Inamura, Takashi Honda, Masatoshi Hiraishi, Kenji M. Kojima, Ryosuke Kadono, Yoshio Kuramoto, Youichi Murakami, Satoru Matsuishi, Hideo Hosono

    Physical Review B   99 ( 22 )   2019.6

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    DOI: 10.1103/PhysRevB.99.220505

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  • Electronic Defects in Amorphous Oxide Semiconductors: A Review Reviewed

    Keisuke Ide, Kenji Nomura, Hideo Hosono, Toshio Kamiya

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   216 ( 5 )   2019.3

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    DOI: 10.1002/pssa.201800372

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  • Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors

    Junghwan Kim, Joonho Bang, Nobuhiro Nakamura, Hideo Hosono

    APL Materials   7 ( 2 )   2019.2

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    DOI: 10.1063/1.5053762

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  • One-step solution synthesis of white-light-emitting films via dimensionality control of the Cs-Cu-I system

    Jun, T., Handa, T., Sim, K., Iimura, S., Sasase, M., Kim, J., Kanemitsu, Y., Hosono, H.

    APL Materials   7 ( 11 )   111113 - 111113   2019

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    DOI: 10.1063/1.5127300

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  • Significance of energy-level alignment in 3D perovskite ELs

    Kihyung Sim, Hayato Kamioka, Junghwan Kim, Hideo Hosono

    Proceedings of the International Display Workshops   2   847 - 849   2019

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  • Pb-free blue-emitting 0D Cs3Cu2l5 with high PLQY of ~90%

    Taehwan Jun, Kihyung Sim, Soshi Limura, Masato Sasase, Hayato Kamioka, Junghwan Kim, Hideo Hosono

    Digest of Technical Papers - SID International Symposium   50 ( 2 )   1176 - 1178   2019

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    DOI: 10.1002/sdtp.13140

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  • Gapless magnetic excitation in a heavily electron-doped antiferromagnetic phase of LaFeAsO0.5 D0.5 Reviewed

    Hiromu Tamatsukuri, Haruhiro Hiraka, Kazuhiko Ikeuchi, Soshi Iimura, Yoshinori Muraba, Mitsutaka Nakamura, Hajime Sagayama, Jun Ichi Yamaura, Youichi Murakami, Yoshio Kuramoto, Hideo Hosono

    Physical Review B   98 ( 17 )   2018.11

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    DOI: 10.1103/PhysRevB.98.174415

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  • Realization of Mott-insulating electrides in dimorphic y b5 S b3

    Yangfan Lu, Junjie Wang, Jiang Li, Jiazhen Wu, Shu Kanno, Tomofumi Tada, Hideo Hosono

    Physical Review B   98 ( 12 )   2018.9

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    DOI: 10.1103/PhysRevB.98.125128

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  • Transition metal-doped amorphous oxide semiconductor thin-film phosphor, chromium-doped amorphous gallium oxide Reviewed

    Keisuke Ide, Yuki Futakado, Naoto Watanabe, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    physica status solidi (a)   1800198   2018.8

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  • Multiple states and roles of hydrogen in p-type SnS semiconductors Reviewed

    Zewen Xiao, Fan-Yong Ran, Min Liao, Hidenori Hiramatsu, Keisuke Ide, Hideo Hosono, Toshio Kamiya

    PHYSICAL CHEMISTRY CHEMICAL PHYSICS   20 ( 32 )   20952 - 20956   2018.8

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    DOI: 10.1039/c8cp02261e

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  • Pulsed laser deposition of SmFeAsO <inf>1−δ</inf> on MgO(100) substrates Reviewed

    Silvia Haindl, Hiroyuki Kinjo, Kota Hanzawa, Hidenori Hiramatsu, Hideo Hosono

    Applied Surface Science   437   418 - 428   2018.4

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    DOI: 10.1016/j.apsusc.2017.08.061

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  • Doping Induced Polymorph and Carrier Polarity Changes in LaSeF Reviewed

    Takeshi Arai, Soshi Iimura, Hideo Hosono

    Chemistry of Materials   30 ( 3 )   597 - 601   2018.2

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    DOI: 10.1021/acs.chemmater.7b05161

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  • Effects of impurity hydrogen in amorphous In-Ga-Zn-O: ultralow optimum oxygen supply for ultrahigh vacuum sputtering and bandgap widening by impurity hydrogen Reviewed

    Keisuke Ide, Kyohei Ishikawa, Haochun Tang, Takayoshi Katase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

    physica status solidi (a)   8   1700832   2018.2

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  • Multi-color light-emitting thin films based on ultra-wide bandgap amorphous oxide semiconductor deposited at room temperature on glass Reviewed

    Naoto Watanabe, Keisuke Ide, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    physica status solidi (a)   8   1700833   2018.1

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  • Organic light-emitting diode lighting with high out-coupling and reliability: Application of transparent amorphous ZnO–SiO2 semiconductor thick film

    Nobuhiro Nakamura, Junghwan Kim, Koji Yamamoto, Satoru Watanabe, Hideo Hosono

    Organic Electronics   51   103 - 110   2017.12

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    DOI: 10.1016/j.orgel.2017.09.016

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  • Exploration of Stable Strontium Phosphide-Based Electrides: Theoretical Structure Prediction and Experimental Validation Reviewed

    Junjie Wang, Kota Hanzawa, Hidenori Hiramatsu, Junghwan Kim, Naoto Umezawa, Koki Iwanaka, Tomofumi Tada, Hideo Hosono

    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY   139 ( 44 )   15668 - 15680   2017.11

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    DOI: 10.1021/jacs.7b06279

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  • Material design of ultra-wide bandgap AOSs and their applications in photostable electronic devices

    Junghwan Kim, Nobuhiro Nakamura, Toshio Kamiya, Hideo Hosono

    AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings   299 - 301   2017.8

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  • Semimetallic bands derived from interlayer electrons in the quasi-two-dimensional electride Y2C Reviewed

    Koji Horiba, Ryu Yukawa, Taichi Mitsuhashi, Miho Kitamura, Takeshi Inoshita, Noriaki Hamada, Shigeki Otani, Naoki Ohashi, Sachiko Maki, Jun-ichi Yamaura, Hideo Hosono, Youichi Murakami, Hiroshi Kumigashira

    PHYSICAL REVIEW B   96 ( 4 )   2017.7

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    DOI: 10.1103/PhysRevB.96.045101

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    Other Link: http://orcid.org/0000-0002-1124-0451

  • P-187: Electronic Structures of Various Color Light-Emitting Amorphous Oxide Semiconductor Thin Films

    Naoto Watanabe, Junghwan Kim, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya

    SID Symposium Digest of Technical Papers   48 ( 1 )   1974 - 1976   2017.5

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    DOI: 10.1002/sdtp.12047

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  • Luminescence and Raman Detection of Molecular Cl-2 and CICIO Molecules in Amorphous SiO2 Matrix Reviewed

    Linards Skuja, Koichi Kajihara, Krisjanis Smits, Andrejs Silins, Hideo Hosono

    JOURNAL OF PHYSICAL CHEMISTRY C   121 ( 9 )   5261 - 5266   2017.3

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    DOI: 10.1021/acs.jpcc.6b13095

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  • Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In-Ga-Zn-O thin-film transistors

    Keisuke Ide, Mitsuho Kikuchi, Masato Ota, Masato Sasase, Hidenori Hiramatsu, Hideya Kumomi, Hideo Hosono, Toshio Kamiya

    JAPANESE JOURNAL OF APPLIED PHYSICS   56 ( 3 )   2017.3

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    DOI: 10.7567/JJAP.56.03BB03

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  • High-field transport properties of a P-doped BaFe2As2 film on technical substrate Reviewed

    Kazumasa Iida, Hikaru Sato, Chiara Tarantini, Jens Haenisch, Jan Jaroszynski, Hidenori Hiramatsu, Bernhard Holzapfel, Hideo Hosono

    SCIENTIFIC REPORTS   7   39951   2017.1

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    DOI: 10.1038/srep39951

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    Other Link: http://orcid.org/0000-0003-1038-9630

  • Transparent conductive oxides

    Hideo Hosono, Kazushige Ueda

    Springer Handbooks   1   2017

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    DOI: 10.1007/978-3-319-48933-9_58

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  • T-c enhancement under pressure in the La1111 pnictide LaFeAsO1-xHx (x=0.2) studied by NMR Reviewed

    N. Fujiwara, N. Kawaguchi, S. Iimura, S. Matsuishi, H. Hosono

    JOINT AIRAPT-25TH & EHPRG-53RD INTERNATIONAL CONFERENCE ON HIGH PRESSURE SCIENCE AND TECHNOLOGY, 2015   950   042033 1 - 4   2017

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    DOI: 10.1088/1742-6596/950/4/042033

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  • Recent progress in pulsed laser deposition of iron based superconductors Reviewed

    Silvia Haindl, Sebastian Molatta, Hidenori Hiramatsu, Hideo Hosono

    Journal of Physics D: Applied Physics   49 ( 34 )   2016.7

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    DOI: 10.1088/0022-3727/49/34/345301

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  • 69-4: NBIS-Stable Oxide Thin-Film Transistors Using Ultra-Wide Bandgap Amorphous Oxide Semiconductors

    Junghwan Kim, Nobuhiro Nakamura, Toshio Kamiya, Hideo Hosono

    SID Symposium Digest of Technical Papers   47 ( 1 )   951 - 953   2016.5

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    DOI: 10.1002/sdtp.10883

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  • 31-4: Novel Inorganic Electron Injection and Transport Materials Enabling Large-Sized Inverted OLEDs Driven by Oxide TFTs

    Hideo Hosono, Junghwan Kim, Toshio Kamiya, Nobuhiro Nakamura, Satoru Watanabe

    SID Symposium Digest of Technical Papers   47 ( 1 )   401 - 404   2016.5

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    DOI: 10.1002/sdtp.10701

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  • Gritty Surface Sample Holder Invented To Obtain Correct X-ray Absorption Fine Structure Spectra for Concentrated Materials by Fluorescence Yield Reviewed

    Hitoshi Abe, Yasuhiro Niwa, Masao Kimura, Youichi Murakami, Toshiharu Yokoyama, Hideo Hosono

    ANALYTICAL CHEMISTRY   88 ( 7 )   3455 - 3458   2016.4

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    DOI: 10.1021/acs.analchem.5b04686

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  • Hydrogen and subgap state in amorphous IGZO thin films

    Joonho Bang, Satoru Matsuishi, Hideo Hosono

    23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016   2   852 - 853   2016

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  • Importance of oxygen- and hydrogen-related defects to develop new amorphous oxide semiconductor materials

    Toshio Kamiya, Junghwan Kim, Keisuke Ide, Hideya Kumomi, Hideo Hosono

    23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016   2   759 - 762   2016

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  • Highly efficient inverted OLEDs using a new transparent amorphous oxide semiconductor

    Junghwan Kim, Satoru Watanabe, Eiji Matsuzaki, Nobuhiro Nakamura, Naomichi Miyakawa, Yoshitake Toda, Toshio Kamiya, Hideo Hosono

    Digest of Technical Papers - SID International Symposium   46 ( 3 )   1714 - 1716   2015.6

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    DOI: 10.1002/sdtp.10190

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  • An Anti CuO2-type Metal Hydride Square Net Structure in Ln(2)M(2)As(2)H(x) (Ln=La or Sm, M=Ti, V, Cr, or Mn) Reviewed

    Hiroshi Mizoguchi, SangWon Park, Haruhiro Hiraka, Kazutaka Ikeda, Toshiya Otomo, Hideo Hosono

    ANGEWANDTE CHEMIE-INTERNATIONAL EDITION   54 ( 10 )   2932 - 2935   2015.3

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    DOI: 10.1002/anie.201409023

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  • 22aBA-3 Electronic-State and Local Structure on Hydrogen-Substituted Iron-based Superconductor

    Maki S., Yamaura J., Abe H., Iimura S., Murakami Y., Matsuishi S., Hosono H.

    Meeting Abstracts of the Physical Society of Japan   70   2057 - 2057   2015

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    DOI: 10.11316/jpsgaiyo.70.1.0_2057

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  • X線,中性子,ミュオンを用いた鉄系超伝導体の研究

    淳一 山浦, 聡 松石, 壮史 飯村, 秀雄 細野, 雅俊 平石, 健児 小嶋, 晴弘 平賀, 良典 門野, 洋一 村上

    日本結晶学会誌   2015

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    DOI: 10.5940/jcrsj.57.5

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  • Photochemistry of Nanocage Ca12Al14-xSixO32Cl2+x (x=0.0 and 3.4) Crystals Reviewed

    Satoru Matsuishi, Hiroki Muramatsu, Hideo Hosono

    CHEMISTRY LETTERS   43 ( 8 )   1371 - 1373   2014.8

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    DOI: 10.1246/cl.140423

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  • Diffusion and Reactions of Photoinduced Interstitial Oxygen Atoms in Amorphous SiO2 Impregnated with O-18-Labeled Interstitial Oxygen Molecules Reviewed

    Koichi Kajihara, Linards Skuja, Hideo Hosono

    JOURNAL OF PHYSICAL CHEMISTRY C   118 ( 8 )   4282 - 4286   2014.2

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    DOI: 10.1021/jp412606a

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  • Critical factor for epitaxial growth of cobalt-doped BaFe2As2 films by pulsed laser deposition Reviewed

    Hidenori Hiramatsu, Hikaru Sato, Takayoshi Katase, Toshio Kamiya, Hideo, Hosono

    Applied Physics Letters   104 ( 17 )   72602   2014

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    DOI: 10.1063/1.4874609

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  • Electric double-layer transistor using layered iron selenide Mott insulator TlFe1.6Se2 Reviewed

    Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, Hideo, Hosono

    Proc. Natl. Acad. Sci. USA   111   3979 - 3983   2014

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    DOI: 10.1073/pnas.1318045111

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  • Theoretical analysis on the band structure variance of the electron doped 1111 iron-based superconductors Reviewed

    K. Suzuki, H. Usui, S. Iimura, Y. Sato, S. Matsuishi, H. Hosono, K. Kuroki

    PROCEEDINGS OF THE 26TH INTERNATIONAL SYMPOSIUM ON SUPERCONDUCTIVITY (ISS 2013)   58   38 - 41   2014

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    DOI: 10.1016/j.phpro.2014.09.010

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  • 鉄系超伝導体LaFeAsO1-xHxの水素高ドープ域における反強磁性相

    晴弘 平賀, 淳一 山浦, 壮史 飯村, 聡 松石, 洋一 村上, 秀雄 細野

    波紋   2014

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    DOI: 10.5611/hamon.24.4_262

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  • Luminescence of Non-bridging Oxygen Hole Centers in Crystalline SiO2 Reviewed

    Linards Skuja, Koichi Kajihara, Jurgis Grube, Hideo Hosono

    FUNDAMENTALS AND APPLICATIONS IN SILICA AND ADVANCED DIELECTRICS (SIO2014)   1624   130 - 134   2014

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    DOI: 10.1063/1.4900468

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  • In homogeneous broadening and peak shift of the 7.6 eV optical absorption band of oxygen vacancies in SiO2 Reviewed

    Koichi Kajihara, Linards Skuja, Hideo Hosono

    FUNDAMENTALS AND APPLICATIONS IN SILICA AND ADVANCED DIELECTRICS (SIO2014)   1624   58 - 63   2014

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    DOI: 10.1063/1.4900457

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  • Indium-based ultraviolet-transparent electroconductive oxyfluoride InOF: ambient-pressure synthesis and unique electronic properties in comparison with In2O3 Reviewed

    Tatsuya Mori, Koichi Kajihara, Kiyoshi Kanamura, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono

    Journal of the American Chemical Society   135 ( 35 )   13080 - 13088   2013.9

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    A method for the synthesis of single-phase powdered InOF under ambient pressure has been developed. The method involves pyrolysis of a hydrate of InF3 in an O2 atmosphere of controlled humidity. Various intermediate phases were formed during the pyrolysis, and their structures and interconversions were analyzed. Combined results of optical absorption measurements and density functional calculations indicate that InOF is a direct band gap material with a band gap energy of ∼3.7 eV. Unlike In2O3, the electrical conductivity of polycrystalline InOF pellets can be controlled over ∼8 orders of magnitude from ∼10–8 S cm–1 to ∼2 S cm–1 by thermal annealing, and the sample with the highest conductivity was a nearly degenerate n-type semiconductor with a relatively small carrier concentration of ∼1018 cm–3. The work function of InOF measured by ultraviolet photoelectron spectroscopy is ∼3.5 eV and is smaller by ∼1.5 eV than that of In2O3. This difference comes from a decrease in the electron affinity.

    DOI: 10.1021/ja405889m

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  • Phase diagram and superconducting states in LaFeAsO1-xHx based on the multiorbital extended Hubbard mode Reviewed

    Y. Yamakawa, S. Onari, H. Kontani, N. Fujiwara, S. Iimura, H. Hosono

    Physical Review B - Condensed Matter and Materials Physics   88 ( 4 )   041106(R)-1 - 041106(R)-1   2013.7

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    DOI: 10.1103/PhysRevB.88.041106

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  • Formation and annihilation of intrinsic defects induced by electronic excitation in high-purity crystalline SiO2 Reviewed

    Koichi Kajihara, Linards Skuja, Hideo Hosono

    Journal of Applied Physics   113 ( 15 )   143511   2013.4

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    DOI: 10.1063/1.4800961

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  • Superconducting properties and phase diagram of indirectly electron-doped (Sr1-xLax)Fe2As2 epitaxial films grown by pulsed laser deposition Reviewed

    Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Hideo Hosono

    IEEE Trans. Appl. Supercond.   23   7300405   2013

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    DOI: 10.1109/TASC.2012.2234935

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  • Anomalous scaling behavior in a mixed-state Hall effect of a cobalt-doped BaFe2As2 epitaxial films with a high critical current density over 1MA/cm2 Reviewed

    Hikaru Sato, Takayoshi Katase, Won Nam Kang, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

    Phys. Rev. B   87   064504   2013

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    DOI: 10.1103/PhysRevB.87.064504

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  • 3-D Stacked complementary TFT devices using n-Type a-IGZO and p-Type F8T2 TFTs comparison between stacked and sided configurations

    Takayuki Hasegawa, Masashi Inoue, Tokiyoshi Matsuda, Mutsumi Kimura, Kenji Nomura, Toshio Kamiya, Hideo Hosono

    Proceedings of the International Display Workshops   1   331 - 332   2013

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  • Structural relaxation, crystallization, and defect passivation in amorphous ln-Ga-Zn-O

    Toshio Kamiva, Keisuke Ide, Kenji Nomura, Hideya Kumomi, Hideo Hosono

    Proceedings of the International Display Workshops   1   478 - 481   2013

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  • 3-D stacked complementary TFT devices using n-type α-IGZO and p-type F8T2 TFTs - Operation confirmation of NOT and NAND logic circuits - Operation c Reviewed

    Mutsumi Kimura, Takayuki Hasegawa, Masashi Inoue, Kenji Nomura, Toshio Kamiya, Hideo Hosono

    Digest of Technical Papers - SID International Symposium   44 ( 1 )   995 - 998   2013

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    DOI: 10.1002/j.2168-0159.2013.tb06389.x

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  • Effects of Diffusion of Hydrogen and Oxygen on Electrical Properties of Amorphous Oxide Semiconductor, In-Ga-Zn-O Reviewed

    Kenji Nomura, Toshio Kamiya, Hideo Hosono

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   2 ( 1 )   P5 - P8   2013

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    DOI: 10.1149/2.011301jss

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  • Unusual pressure effects on the superconductivity of indirectly electron-doped (Ba1-xLax)Fe2As2 epitaxial films Reviewed

    Takayoshi Katase, Hikaru Sato, Hidenori Hiramatsu, Toshio Kamiya, Hideo, Hosono

    Phys. Rev. B   88   503   2013

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    DOI: 10.1103/PhysRevB.88.140503

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  • Magnetic scattering and electron pair breaking by rare earth ion substitution in BaFe2As2 epitaxial films Reviewed

    Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

    New J. Phys.   15   073019   2013

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    DOI: 10.1088/1367-2630/15/7/073019

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  • 18O-labeled interstitial oxygen molecules as probes to study reactions involving oxygen-related species in amorphous SiO2 Invited Reviewed

    Koichi Kajihara, Linards Skuja, Hideo Hosono

    Journal of Non-Crystalline Solids   358   3524 - 3530   2012.12

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    DOI: 10.1016/j.jnoncrysol.2012.04.038

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  • Oxygen-excess-related point defects in glassy/amorphous SiO2 and related materials Invited Reviewed

    L. Skuja, K. Kajihara, M. Hirano, H. Hosono

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   286   159 - 168   2012.9

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    DOI: 10.1016/j.nimb.2012.02.038

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  • 75As NMR study of the growth of paramagnetic-metal domains due to electron doping near the superconducting phase in LaFeAsO 1-xF x Reviewed

    N. Fujiwara, T. Nakano, Y. Kamihara, H. Hosono

    Physical Review B - Condensed Matter and Materials Physics   85 ( 9 )   2012.3

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    DOI: 10.1103/PhysRevB.85.094501

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  • Stability and high-frequency operation of amorphous In-Ga-Zn-O thin-film transistors with various passivation layers Reviewed

    Kenji Nomura, Toshio Kamiya, Hideo Hosono

    THIN SOLID FILMS   520 ( 10 )   3778 - 3782   2012.3

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    DOI: 10.1016/j.tsf.2011.10.068

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  • As-75 NMR study of the growth of paramagnetic-metal domains due to electron doping near the superconducting phase in LaFeAsO1-xFx Reviewed

    N. Fujiwara, T. Nakano, Y. Kamihara, H. Hosono

    PHYSICAL REVIEW B   85 ( 9 )   094501-1 - 094501-5   2012.3

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    DOI: 10.1103/PhysRevB.85.094501

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  • Amorphous in-Ga-Zn-O thin film transistors: Fabrication and properties

    Toshio Kamiya, Hideo Hosono

    Handbook of Zinc Oxide and Related Materials: Volume Two, Devices and Nano-Engineering   485 - 535   2012.1

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  • Microstructure and transport properties of [001]-tilt bicrystal grain boundaries in iron pnictide superconductor, cobalt-doped BaFe2As2 Reviewed

    Hidenori Hiramatsu, Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono

    Mater. Sci. Eng. B   177   515 - 519   2012

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    DOI: 10.1016/j.mseb.2011.12.009

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  • Identical effects of indirect and direct electron doping of superconducting BaFe2As2 thin films Reviewed

    Takayoshi Katase, Soshi Iimura, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

    Phys. Rev. B   85 ( 14 )   140516   2012

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    DOI: 10.1103/PhysRevB.85.140516

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  • Thin film growth by pulsed laser deposition and properties of 122-type iron-based superconductor AE(Fe1-xCox)2As2 (AE = alkaline earth) Reviewed

    Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

    Supercond. Sci. Technol.   25   084015   2012

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    DOI: 10.1088/0953-2048/25/8/084015

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  • High Temperature Structural Phase Transitions in FeAs Based Compounds Reviewed

    S. K. Mishra, R. Mittal, P. U. Sastry, S. L. Chaplot, S. Matsuishi, H. Hosono

    SOLID STATE PHYSICS, PTS 1 AND 2   1447   95 - +   2012

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    DOI: 10.1063/1.4709898

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  • Characteristic shift of a CTFT inverter using n-type IGZO and p-type F8T2 TFTs after temperature and operation stresses Reviewed

    Masashi Inoue, Takayuki Hasegawa, Takashi Nakanishi, Mutsumi Kimura, Kenji Nomura, Toshio Kamiya, Hideo Hosono

    IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai   126 - 127   2012

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    DOI: 10.1109/IMFEDK.2012.6218614

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  • Visible to vacuum-UV range optical absorption of oxygen dangling bonds in amorphous SiO2 Reviewed

    Linards Skuja, Koichi Kajihara, Masahiro Hirano, Hideo Hosono

    Physical Review B - Condensed Matter and Materials Physics   84 ( 20 )   205206   2011.11

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    DOI: 10.1103/PhysRevB.84.205206

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  • Photovoltaic properties of n-type amorphous In–Ga–Zn–O and p-type single crystal Si heterojunction solar cells: Effects of Ga content Reviewed

    Kyeongmi Lee, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono

    Thin Solid Films   520 ( 10 )   3808 - 3812   2011.10

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    DOI: 10.1016/j.tsf.2011.10.066

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  • Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects Reviewed

    Kenji Nomura, Toshio Kamiya, Hideo Hosono

    APPLIED PHYSICS LETTERS   99 ( 5 )   2011.8

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    DOI: 10.1063/1.3622121

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  • Frenkel defect process in amorphous silica Invited

    Koichi Kajihara, Masahiro Hirano, Linards Skuja, Hideo Hosono

    Proceedings of SPIE - The International Society for Optical Engineering   8077   80770R   2011.7

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    DOI: 10.1117/12.886698

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  • Determination of the local structure of a cage with an oxygen ion in Ca12Al14O33 Reviewed

    Terutoshi Sakakura, Kiyoaki Tanaka, Yasuyuki Takenaka, Satoru Matsuishi, Hideo Hosono, Shunji Kishimoto

    ACTA CRYSTALLOGRAPHICA SECTION B-STRUCTURAL SCIENCE   67   193 - 204   2011.6

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    DOI: 10.1107/S0108768111005179

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  • Crucial dependence of excimer laser toughness of "wet" silica on excess oxygen Reviewed

    Linards Skuja, Koichi Kajihara, Masahiro Hirano, Hideo Hosono

    Journal of Non-Crystalline Solids   357   1875 - 1878   2011.4

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    DOI: 10.1016/j.jnoncrysol.2010.12.047

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  • Oxygen-excess amorphous SiO2 with 18O-labeled interstitial oxygen molecules Reviewed

    Koichi Kajihara, Masahiro Hirano, Linards Skuja, Hideo Hosono

    Journal of Non-Crystalline Solids   357   1842 - 1845   2011.4

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    DOI: 10.1016/j.jnoncrysol.2010.11.116

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  • La2Sb, a layered superconductor with metal–metal bonds

    Hiroshi Mizoguchi, Hideo Hosono

    Chemical Communications   47 ( 13 )   3778 - 3780   2011.3

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    DOI: 10.1039/c0cc05384h

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  • A Metal−Insulator Transition in R2O2Bi with an Unusual Bi2− Square Net (R = Rare Earth or Y) Reviewed

    Hiroshi Mizoguchi, Hideo Hosono

    Journal of the American Chemical Society   133 ( 8 )   2394 - 2397   2011.3

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    DOI: 10.1021/ja111015p

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  • Biaxially textured cobalt-doped BaFe2As2 films with high critical current density over 1 MA/cm2 on MgO-buffered metal-tape flexible substrates Reviewed

    Takayoshi Katase, Hidenori Hiramatsu, Vladimir Matias, Chris Sheehan, Yoshihiro Ishimaru, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono

    Appl. Phys. Lett.   98 ( 24 )   242510   2011

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    DOI: 10.1063/1.3599844

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  • Late-news paper: An ambipolar oxide TFT

    Hideo Hosono, Kenji Nomura, Toshio Kamiya

    49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011   1   486 - 487   2011

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  • Advantageous grain boundaries in iron pnictide superconductors Reviewed

    Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Hidenori Hiramatsu, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono

    Nat. Commun.   2   409   2011

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    DOI: 10.1038/ncomms1419

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  • Characterization of epitaxial Co-doped BaFe2As2 thin films Reviewed

    Shyam Mohan, Toshihiro Taen, Hidenori Yagyuda, Yasuyuki Nakajima, Tsuyoshi Tamegai, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono

    Physica C   471 ( 21-22 )   1181 - 1184   2011

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    DOI: 10.1016/j.physc.2011.05.153

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  • Magneto-optical imaging of polycrystalline LaFePO1-xFx Reviewed

    Y. Tsuchiya, Y. Nakajima, T. Tamegai, Y. Kamihara, M. Hirao, H. Hosono

    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   470   S300 - S301   2010.12

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    DOI: 10.1016/j.physc.2010.01.066

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  • Electronic structures of MnP-based crystals: LaMnOP, BaMn2P2, and KMnP Reviewed

    Toshio Kamiya, Hiroshi Yanagi, Takumi Watanabe, Masahiro Hirano, Hideo Hosono

    Materials Science and Engineering B   173 ( 1-3 )   239 - 243   2010.10

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    DOI: 10.1016/j.mseb.2010.02.007

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  • Electrical and magnetic properties of quaternary compounds LnMnPO (Ln = Nd, Sm, Gd) with ZrCuSiAs-type structure Reviewed

    Hiroshi Yanagi, Katsutoshi Fukuma, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    Materials Science and Engineering B   ( 173 )   47 - 50   2010.10

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    DOI: 10.1016/j.mseb.2010.01.004

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  • Tetragonal To Collapsed Tetragonal Phase Transition In BaFe2As2 and CaFe2As2 Reviewed

    R. Mittal, S. K. Mishra, S. L. Chaplot, S. V. Ovsyannikov, E. Greenberg, D. M. Trots, L. Dubrovinsky, Y. Su, Th. Brueckel, S. Matsuishi, H. Hosono, G. Garbarino

    INTERNATIONAL CONFERENCE ON PHYSICS OF EMERGING FUNCTIONAL MATERIALS (PEFM-2010)   1313   349 - +   2010

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  • Intrinsic Carrier Mobility in Amorphous In-Ga-Zn-O Thin-Film Transistors Determined by Combined Field-Effect Technique

    Mutsumi Kimura, Toshio Kamiya, Takashi Nakanishi, Kenji Nomura, Hideo Hosono

    Appl. Phys. Lett.   96 ( 26 )   262105   2010

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  • Impurities in FeAs-based superconductor, SrFe2As2, studied by first-principles calculations Reviewed

    Toshio Kamiya, Hidenori Hiramatsu, Takayoshi Katase, Masahiro Hirano, Hideo Hosono

    Mater. Sci. Eng. B   173   244 - 247   2010

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    DOI: 10.1016/j.mseb.2010.01.051

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  • DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2 epitaxial films Reviewed

    Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Hidenori Hiramatsu, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono

    Supercond. Sci. Technol.   23   082001   2010

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  • Transport and magnetic properties of Co-doped BaFe2As2 epitaxial thin films grown on MgO substrate Reviewed

    Shyam Mohan, Toshihiro Taen, Hidenori Yagyuda, Yasuyuki Nakajima, Tsuyoshi Tamegai, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono

    Supercond. Sci. Technol.   23 ( 10 )   105016   2010

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    DOI: 10.1088/0953-2048/23/10/105016

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  • How we can improve characteristics and stability of a-In-Ga-Zn-O based TFTs

    Kenji Nomura, Toshio Kamiya, Hideo Hosono

    Proceedings of International Meeting on Information Display   220 - 221   2010

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  • Sol-gel synthesis of monolithic silica gels and glasses from phase-separating tetraethoxysilane-water binary system. Reviewed

    Koichi Kajihara, Masahiro Hirano, Hideo Hosono

    Chemical Communications (Cambridge, England)   2580 - 2582   2009.5

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    A facile synthetic route for monolithic silica gels and glasses from a phase-separating binary mixture of tetraalkoxysilane and water, free from alcohols, organic additives, or other third components, has been developed.

    DOI: 10.1039/b900887j

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  • What have been clarified for amorphous oxide semiconductors?

    Toshio Kamiya, Kenji Nomura, Hideo Hosono

    2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009   2009

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  • Intrinsic defect formation in amorphous SiO2 by electronic excitation: Bond dissociation versus Frenkel mechanisms Reviewed

    Koichi Kajihara, Masahiro Hirano, Linards Skuja, Hideo Hosono

    PHYSICAL REVIEW B   78 ( 9 )   2008.9

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    DOI: 10.1103/PhysRevB.78.094201

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  • Hydrogen-related radiation defects in SiO2-based glasses Reviewed

    Linards Skuja, Koichi Kajihara, Masahiro Hirano, Hideo Hosono

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   266   2971 - 2975   2008.6

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    DOI: 10.1016/j.nimb.2008.03.150

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  • Opto-electronic properties and light-emitting device application of widegap layered oxychalcogenides: LaCuOCh (Ch = chalcogen) and La2CdO2Se2

    Hidenori Hiramatsu, Hayato Kamioka, Kazushige Ueda, Hiromichi Ohta, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   203 ( 11 )   2800 - 2811   2006.9

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    DOI: 10.1002/pssa.200669665

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  • Role of interstitial voids in oxides on formation and stabilization of reactive radicals: interstitial HO2 radicals in F2-laser-irradiated amorphous SiO2 Reviewed

    Koichi Kajihara, Masahiro Hirano, Linards Skuja, Hideo Hosono

    Journal of the American Chemical Society   128 ( 16 )   5371 - 5374   2006.4

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    A procedure to produce stable hydroperoxy radicals (HO&lt;sub&gt;2&lt;/sub&gt;) in bulk amorphous SiO&lt;sub&gt;2&lt;/sub&gt; (&lt;i&gt;a&lt;/i&gt;-SiO&lt;sub&gt;2&lt;/sub&gt;) has been developed. Oxygen molecules incorporated in the interstitial voids in &lt;i&gt;a&lt;/i&gt;-SiO&lt;sub&gt;2&lt;/sub&gt; react with mobile hydrogen atoms (H&lt;sup&gt;0&lt;/sup&gt;) generated by the photolysis of silanol (SiOH) groups with F&lt;sub&gt;2&lt;/sub&gt;-laser light (λ = 157 nm, &lt;i&gt;h&lt;/i&gt;ν = 7.9 eV), resulting in the efficient creation of interstitial H&lt;sup&gt;0&lt;/sup&gt;. The high yield of HO&lt;sub&gt;2&lt;/sub&gt; suggests that the collisions of the reaction intermediate with the void wall play an important role in dissipating the excess energy of the intermediate instead of the triple collision observed in the gas phase reaction. The resultant HO&lt;sub&gt;2&lt;/sub&gt; is thermally stable up to 100 °C.

    DOI: 10.1021/ja0571390

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  • Thermoelectric properties of epitaxial films of layered cobalt oxides fabricated by topotactic ion-exchange methods Reviewed

    Kenji Sugiura, Hiromichi Ohta, Kenji Nomura, Tomohiro Saito, Yuichi Ikuhara, Masahiro Hirano, Hideo Hosono, Kunihito Koumoto

    ICT'06: XXV INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS   99 - +   2006

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  • Transparent conducting properties in layered oxychalcogenides

    Kazushige Ueda, Hidenori Hiramatsu, Masahiro Hirano, Toshio Kamiya, Hideo Hosono

    Ceramic Transactions   196   467 - 473   2006

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  • High-quality epitaxial film growth of superconducting sodium-cobalt oxyhydrate, Na0.3CoO2 · 1.3H2O

    Kenji Sugiura, Hiromichi Ohta, Kenji Nomura, Hiroshi Yanagi, Masahiro Hirano, Hideo Hosono, Kunihito Koumoto

    Ceramic Transactions   196   303 - 309   2006

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  • Vacuum-ultraviolet absorption of hydrogenated and deuterated silanol groups and interstitial water molecules in amorphous SiO2 Reviewed

    K Kajihara, M Hirano, L Skuja, H Hosono

    PHYSICAL REVIEW B   72 ( 21 )   2005.12

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    DOI: 10.1103/PhysRevB.72.214112

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  • High performance FET using transparent amorphous oxide semiconductors as channel layer on plastic substrate Reviewed

    Hideo Hosono, Kenji Nomura, Toshio Kamiya

    IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2   251 - 252   2005

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  • Epitaxial growth and application of transparent oxide semiconductors

    Hiromichi Ohta, Kenji Nomura, Hidenori Hiramatsu, Toshio Kamuya, Masahiro Hirano, Hideo Hosono

    Proceedings - Electrochemical Society   PV 2003-29   64 - 78   2005

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  • Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO

    H Ohta, M Hirano, K Nakahara, H Maruta, T Tanabe, M Kamiya, T Kamiya, H Hosono

    APPLIED PHYSICS LETTERS   83 ( 5 )   1029 - 1031   2003.8

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    DOI: 10.1063/1.1598624

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  • Decomposition of water by a CaTiO3 photocatalyst under UV light irradiation Reviewed

    Hiroshi Mizoguchi, Kazushige Ueda, Masahiro Orita, Sang Chul Moon, Koichi Kajihara, Masahiro Hirano, Hideo Hosono

    Materials Research Bulletin   37   2401 - 2406   2002.12

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    DOI: 10.1016/S0025-5408(02)00974-1

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  • Diffusion and reactions of hydrogen in F-2-laser-irradiated SiO2 glass Reviewed

    K Kajihara, L Skuja, M Hirano, H Hosono

    PHYSICAL REVIEW LETTERS   89 ( 13 )   2002.9

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    DOI: 10.1103/PhysRevLett.89.135507

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  • Carrier generation in polycrystalline MgIn2O4 thin films by proton implantation

    M. Miyakawa, H. Un’no, K. Ueda, H. Kawazoe, H. Hosono, N. Matsunami

    Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties   82 ( 10 )   1155 - 1162   2002

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    DOI: 10.1080/13642810208223156

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  • Generation of intense 25-fs, 290-nm seed pulses for the terawatt-class ultraviolet solid-state laser system

    Zhenlin Liu, Toshimasa Kozeki, Shingo Oho, Nobuhiko Sarukura, Masahiro Hirano, Hideo Hosono

    Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest   54   2002

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  • Fabrication of micro holographic optical elements by interference of a single pulse from femtosecond laser

    M. Hirano, K. I. Kawamura, N. Sarukura, H. Hosono

    Conference on Lasers and Electro-Optics Europe - Technical Digest   125 - 126   2001

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    DOI: 10.1109/cleo.2001.947581

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  • Deep-UV transparent conductive β-Ga2O3 film

    Masahiro Orita, Hiromichi Ohta, Masahiro Hirano, Hideo Hosono

    Materials Research Society Symposium - Proceedings   666   F291 - F296   2001

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    DOI: 10.1557/proc-666-f2.9

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  • Room temperature operation of UV-LED composed of TCO hetero p-n junction, p-SrCu2O2/n-ZnO

    Hiromichi Ohta, Ken-Ichi Kawamura, Masahiro Orita, Nobuhiko Sarukura, Masahiro Hirano, Hideo Hosono

    MATERIALS SCIENCE OF NOVEL OXIDE-BASED ELECTRONICS   623   283 - 288   2000

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    DOI: 10.1557/PROC-623-283

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  • Heteroepitaxial growth of zinc oxide single crystal thin films on (111)plane YSZ by pulsed laser deposition Reviewed

    H Ohta, H Tanji, M Orita, H Hosono, H Kawazoe

    EPITAXIAL GROWTH-PRINCIPLES AND APPLICATIONS   570   309 - 313   1999

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  • Defect formation in S:G glasses studied by irradiation with excimer laser light Reviewed

    Hideo Hosono, Hiroshi Kawazoe, Junji Nishii

    Physical Review B - Condensed Matter and Materials Physics   53 ( 18 )   R11921 - R11923   1996

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    DOI: 10.1103/PhysRevB.53.R11921

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  • 最先端の有機EL : 基礎物理・材料化学・デバイス応用と解析技術

    安達 千波矢, 藤本 弘( Role: Contributor金 正煥、 細野 秀雄 第21章 透明酸化物半導体の電極材料への応用 ―陰極への応用と実例―)

    シーエムシー出版  2017  ( ISBN:9784781312408

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  • 酸化物半導体と鉄系超伝導 : 新物質・新機能・応用展開(普及版)

    細野 秀雄, 平野 正浩( Role: Supervisor (editorial))

    シーエムシー出版  2016  ( ISBN:9784781311111

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    Total pages:233   Language:Japanese   Book type:Scholarly book

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  • 超創造科学 : ナノ・バイオ・ITの未来

    細野 秀雄, 松尾 豊, 関山 和秀, 唐津 治夢( Role: Joint author)

    化学同人  2016  ( ISBN:9784807915026

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  • Photonic and electronic properties of fluoride materials

    Alain Tressaud, Kenneth Poeppelmeier( Role: ContributorY. Kamihara, H. Hosono "19. Superconductivity in Iron Oxypnictide Induced by F-Doping")

    Elsevier  2016  ( ISBN:9780128016398

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    Responsible for pages:423-446   Language:English   Book type:Scholarly book

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  • Handbook of Visual Display Technology (2nd ed.)

    Janglin Chen, Wayne Cranton, Mark Fihn( Role: ContributorToshio Kamiya , Hideo Hosono "Oxide TFTs")

    Springer  2016  ( ISBN:9783319143453

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    Responsible for pages:1111-1144   Language:English   Book type:Scholarly book

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  • Hydrogen energy system using ammonia

    ( Role: Contributor)

    2015  ( ISBN:9784781310732

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    Responsible for pages:76-86   Language:Japanese   Book type:Scholarly book

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  • Iron-Based Superconductivity

    Peter D. Johnson( Role: ContributorChapter 1. Introduction: Discovery and Current Status)

    Springer  2015  ( ISBN:9783319112534

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    Responsible for pages:3-19   Language:English   Book type:Scholarly book

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  • 鉄の事典

    増本 健, 金森 順次郎, 馬越 佑吉, 福山 秀敏, 友野 宏, 中島 英雅, 北田 正弘( Role: Contributor鉄系高温超伝導)

    朝倉書店  2014  ( ISBN:9784254240207

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    Responsible for pages:195-204   Language:Japanese   Book type:Dictionary, encyclopedia

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  • 注目のスーパーマテリアル : 社会を一変させる新材料100

    水谷 仁( Role: Contributor)

    ニュートンプレス  2014  ( ISBN:9784315519846

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    Responsible for pages:34-35   Language:Japanese   Book type:General book, introductory book for general audience

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  • 透明導電膜の技術 改訂3版

    日本学術振興会透明酸化物光, 電子材料, 委員会 編( Role: Contributor)

    オーム社  2014  ( ISBN:9784274215223

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  • Handbook of advanced ceramics : materials, applications, processing, and properties

    Somiya Shigeyuki( Role: ContributorChapter 6.4. New Frontiers Opened Up Through Function Cultivation in Transparent Oxides)

    Academic Press is an imprint of Elsevier  2013  ( ISBN:9780123854698

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    Responsible for pages:455-487   Language:English   Book type:Scholarly book

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  • 高効率太陽電池 : 化合物・集光型・量子ドット型・Si・有機系・その他新材料

    山口 真史 ほか( Role: Contributor野村 研二、神谷 利夫、細野 秀雄 第6章.N型a-In-Ga-Zn-O/P型c-Siヘテロ接合型太陽電池の開発)

    エヌ・ティー・エス  2013  ( ISBN:9784864690348

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  • 超伝導現象と高温超伝導体

    新日本編集企画( Role: Contributor松石 聡、細野 秀雄 第3節.鉄系超伝導体)

    エヌ・ティー・エス  2013  ( ISBN:9784864690577

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    Responsible for pages:72-80   Language:Japanese   Book type:Scholarly book

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  • Element strategy initiative

    ( Role: Contributor)

    2013  ( ISBN:9784759813715

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    Responsible for pages:2-11   Language:Japanese   Book type:Scholarly book

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  • 光学薄膜の最適設計・成膜技術と膜厚・膜質・光学特性の制御

    村田貴士, 企画編集( Role: Contributor神谷 利夫、細野 秀雄 第25節 光学法,X線法によるアモルファスIGZO薄膜の構造・物性解析)

    技術情報協会  2013  ( ISBN:9784861044854

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    Responsible for pages:367-376   Language:Japanese   Book type:Scholarly book

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  • Devices and nano-engineering

    edited by Zhe, Chuan Feng( Role: ContributorToshio Kamiya, Hideo Hosono "13. Amorphous In-Ga-Zn-O thin film transistors: fabrication and properties")

    CRC Press  2013  ( ISBN:9781439855744

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    Responsible for pages:485-536   Language:English   Book type:Scholarly book

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  • Radiation Synthesis of Materials and Compounds

    edited by, Boris I. Kharisov, Oxana V. Kharissova, Ubaldo Ortiz M?ndez( Role: ContributorKoichi Kajihara, Linards Skuja, and Hideo Hosono "Chapter 5. Frenkel Defect Process in Silicon Dioxide")

    CRC  2013  ( ISBN:9781466505223

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    Responsible for pages:101-112   Language:English   Book type:Scholarly book

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  • Iron-based superconductors : materials, properties, and mechanisms

    Nan-Lin Wang, Hideo Hosono, Pengcheng Dai( Role: Joint author)

    Pan Stanford  2013  ( ISBN:9789814303224

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    Total pages:562   Language:English   Book type:Scholarly book

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  • Handbook of Visual Display Technology. Vol.2

    Janglin Chen, Wayne Cranton, Mark Fihn, editors( Role: Contributor5.3.4. Oxide TFTs)

    Springer  2012  ( ISBN:9783540795667

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    Responsible for pages:729-750   Language:English   Book type:Scholarly book

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  • 100 Years of Superconductivity

    Horst Rogalla, Peter H. Kes( Role: Contributor4.5. Fe-Pnictides and -Chalcogenides)

    CRC Press  2012  ( ISBN:9781439849460

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    Responsible for pages:255-264   Language:English   Book type:Scholarly book

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  • 私と世界、世界の私 : 13歳からの大学授業

    桐光学園中学校, 高等学校( Role: Contributor好きなことにバカになる ?材料科学の魅力と醍醐味)

    水曜社  2011  ( ISBN:9784880652603

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    Responsible for pages:86-101   Language:Japanese   Book type:Scholarly book

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  • Band gap engineering : the challenge to next-generation efficient devices

    ( Role: Contributor)

    2011  ( ISBN:9784781305080

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    Responsible for pages:138-153   Language:Japanese   Book type:Scholarly book

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  • セラミックス機能化ハンドブック

    福長脩, 編集委員長( Role: Contributor第1編.総論 第1章.セラミックス機能設計)

    エヌ・ティー・エス  2011  ( ISBN:9784860433505

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    Responsible for pages:3-11   Language:Japanese   Book type:Scholarly book

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  • Transparent Oxides for Electronics and Optiocs (TOEO-6)

    Edited by, Hideo Hosono, Yuzo Shegesato, David Ginley( Role: Edit)

    Elsevier  2010 

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  • 好きなことに、バカになる

    細野 秀雄( Role: Sole author)

    サンマーク出版  2010  ( ISBN:9784763199959

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    Total pages:207   Language:Japanese   Book type:General book, introductory book for general audience

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  • Oxide semiconductors and iron based superconductors : novel materials, functionalities and emerging applications

    ( Role: Supervisor (editorial))

    2010  ( ISBN:9784781302683

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    Total pages:233   Responsible for pages:1-11   Language:Japanese   Book type:Scholarly book

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  • 仕事関数/イオン化ポテンシャルの計測・評価と制御・利用事例集 : ~材料・デバイスの性能向上に向けたデータの解釈と活用~

    情報機構( Role: Contributor戸田 喜丈、細野 秀雄 第3章 第4節.低い仕事関数と化学的安定性を併せ持つ物質C12A7エレクトライド)

    情報機構  2010  ( ISBN:9784904080597

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    Responsible for pages:174-187   Language:Japanese   Book type:Scholarly book

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  • テクノロマン・インタビュー : 明日の技術を夢見る研究者に聞く

    商工ジャーナル, 編集部(セメント原料のナノのカゴに電子を入れて新機能)

    水曜社  2010  ( ISBN:9784904735046

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    Responsible for pages:89-102   Language:Japanese   Book type:General book, introductory book for general audience

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  • Handbook of transparent conductors

    Ginley, David, Hosono, Hideo, Paine, David C( Role: Joint author)

    Springer  2010  ( ISBN:9781441916372

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    Total pages:546   Language:English   Book type:Scholarly book

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  • Transparent electronics : from synthesis to applications

    Antonio Facchetti, Antonio Facchetti, Tobin J. Marks( Role: Contributor2. Transparent Oxide Semiconductors: Fundamentals and RecentProgress)

    Wiley  2010  ( ISBN:9780470990773

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    Responsible for pages:31-59   Language:English   Book type:Scholarly book

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  • Beyond innovation : 「イノベーションの議論」を超えて

    前田 正史( Role: Contributor透明アモルファス酸化物半導体(TAOS)とそのディスプレイへの展開 -憧れで始めた基礎研究が企業の力で応用研究へ-)

    丸善プラネット  2009  ( ISBN:9784863450165

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    Responsible for pages:200-209   Language:Japanese   Book type:Scholarly book

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  • ガラスの加工技術と製品応用

    情報機構( Role: Contributor梶原 浩一、細野 秀雄 第7章 光ファイバー)

    情報機構  2009  ( ISBN:9784904080177

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    Responsible for pages:345-347   Language:Japanese   Book type:General book, introductory book for general audience

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  • 超伝導ハンドブック

    福山 秀敏, 秋光 純 編( Role: Contributor2.7 12CaO・7Al2O3およびLaOTMPn)

    朝倉書店  2009  ( ISBN:9784254131024

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    Responsible for pages:113-122   Language:Japanese   Book type:Scholarly book

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  • Fe, the core of existence through the histroy of 13.7 billion years

    ( Role: Contributor)

    2009 

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    Responsible for pages:15-19   Language:Japanese   Book type:Scholarly book

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  • 5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics (Thin Solid Films, 516(17))

    Edited by, H. Hosono, D.S. Ginley, Y. Shigesato, T. Kamiya( Role: Edit)

    Elsevier  2008 

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  • レアメタルの代替材料とリサイクル

    原田 幸明, 中村 崇 監修( Role: Contributor1.ナノ構造を利用しセメントを半導体,金属,そして超伝導体に変える:C12A7エレクトライドの電子物性と電子構造)

    シーエムシー出版  2008  ( ISBN:9784781300023

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    Responsible for pages:156-171   Language:Japanese   Book type:Scholarly book

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  • 有機EL技術開発の最前線 : 高輝度・高精細・長寿命化・ノウハウ集

    陶山 正夫, 企画編集( Role: Contributor第8章 有機ELの高輝度・高精細化を実現するためのTFT作製技術)

    技術情報協会  2008  ( ISBN:9784861042577

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    Responsible for pages:235-250   Language:Japanese   Book type:General book, introductory book for general audience

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  • ガラスの百科事典

    作花 済夫, ほか] 編集( Role: Contributor)

    朝倉書店  2007  ( ISBN:9784254201246

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    Language:Japanese   Book type:Dictionary, encyclopedia

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  • Low-temperature poly-silicon thin film transistor for system on panel

    supervisor, Yukiharu Uraoka( Role: Contributor)

    2007 

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    Responsible for pages:243-264  

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  • OHM headline review 2006

    ( Role: Contributor)

    2006  ( ISBN:9784274500886

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    Responsible for pages:246-247   Language:Japanese   Book type:Scholarly book

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  • Transparent oxides as active electronic materials and their applications

    ( Role: Supervisor (editorial))

    2006  ( ISBN:9784882316565

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    Total pages:348   Language:Japanese   Book type:Scholarly book

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  • 透明金属が拓く驚異の世界:不可能に挑むナノテクノロジーの錬金術

    細野 秀雄, 神谷 利夫( Role: Joint author)

    ソフトバンククリエイティブ  2006  ( ISBN:9784797337327

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    Total pages:222   Language:Japanese   Book type:Scholarly book

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  • セラミックスの電磁気的・光学的性質(セラミックス基礎工学講座シリーズ7)

    日本セラミックス協会セラミックス編集委員会基礎工学講座小委員会, 編著( Role: Contributor梶原 浩一、細野 秀雄 7.1 代表的酸化物と光との相互作用:SiO2を例として)

    日本セラミックス協会  2006  ( ISBN:9784931298477

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    Responsible for pages:124-130   Language:Japanese   Book type:Scholarly book

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  • セラミックスの電磁気的・光学的性質(セラミックス基礎工学講座シリーズ7)

    日本セラミックス協会セラミックス編集委員会基礎工学講座小委員会, 編著( Role: Contributor細野 秀雄、神谷 利夫 2.2 電子状態の理解はセラミックスの研究にどう役立つか ~酸化物半導体のバンドラインアップを例として~)

    日本セラミックス協会  2006  ( ISBN:9784931298477

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    Responsible for pages:11-17   Language:Japanese   Book type:Scholarly book

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  • エコマテリアルハンドブック

    鈴木 淳史, ほか] 編( Role: Contributor松石 聡、細野 秀雄 III部 4.1.2 単純な酸化物から生まれた新素材 ?無機エレクトライド)

    丸善  2006  ( ISBN:9784621077443

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    Responsible for pages:457-458   Language:Japanese   Book type:Scholarly book

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  • 透明導電膜の技術 改訂第2版

    ( Role: Contributor細野 秀雄、植田 和茂 第4章.透明導電膜の新しい展開)

    オーム社  2006  ( ISBN:9784274203442

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  • 透明導電膜の技術 改訂第2版

    ( Role: Contributor細野 秀雄、植田 和茂 第3章.透明導電膜の基礎的な性質は何か)

    オーム社  2006  ( ISBN:9784274203442

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  • チャンピオンレコードをもつ金属錯体最前線 : 新しい機能性錯体の構築に向けて

    山下 正廣, 北川 進 編( Role: Contributor細野 秀雄、林 克郎 12章.酸化カルシウムと酸化アルミニウムと水で高機能材料を創る)

    化学同人  2006  ( ISBN:9784759807462

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    Responsible for pages:111-122   Language:Japanese   Book type:Scholarly book

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  • レーザープロセシング応用便覧

    レーザー学会( Role: Contributor細野 秀雄、河村 賢一 4.透明材料の3次元微細加工)

    エヌジーティー  2006  ( ISBN:9784990272043

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    Responsible for pages:417-425   Language:Japanese   Book type:Scholarly book

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  • 明日を一新する「値千金」の技術32 : スーパーテクノロジー・ビジュアル報告(NEWTONムック)

    ( Role: Contributor)

    ニュートンプレス  2006  ( ISBN:9784315517774

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    Responsible for pages:86-91   Language:Japanese   Book type:Dictionary, encyclopedia

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  • Nanomaterials: from research to applications

    Hideo Hosono, Yoshinao Mishima Hideo, Takezoe Kenneth MacKenzie( Role: Joint author)

    Elsevier  2006  ( ISBN:9780080449647

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    Total pages:474   Language:English   Book type:Scholarly book

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  • Practical microscopy techniques for materials development

    ( Role: Contributor)

    2006  ( ISBN:4889030743

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    Responsible for pages:222   Language:Japanese   Book type:Scholarly book

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  • Electronic devices on organic substrates : low temperature process and applications

    ( Role: Contributor)

    2006  ( ISBN:4882315564

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    Responsible for pages:102-110   Language:Japanese   Book type:Scholarly book

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  • レーザーハンドブック

    レーザー学会( Role: Contributor梶原 浩一、細野 秀雄 24・5 光学硝材(結晶))

    オーム社  2005  ( ISBN:9784274200359

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    Responsible for pages:537-543   Language:Japanese   Book type:Scholarly book

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  • 東工大Center of Excellence教育改革

    丸山 正明, 細野 秀雄, 岡田 清, 三島 良直, 若井 史博, 森 健彦( Role: Joint author)

    日経BP社  2005  ( ISBN:9784822232023

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    Total pages:236   Language:Japanese   Book type:General book, introductory book for general audience

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  • 産業活性化を担うプロジェクトマネージャー養成講座

    丸山 正明, 細野 秀雄, 三島 良直( Role: Joint author)

    日経BP社  2005  ( ISBN:9784822232047

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    Total pages:235   Language:Japanese   Book type:General book, introductory book for general audience

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  • Proceedings of the 3rd International Symposium on Transparent Oxide Thin films for Electronics and Optics(Thin Solid Films, 445(2))

    guest editors, Hideo Hosono, David S. Ginley, Noboru Ichinose, Yuzo Shigesato( Role: Edit)

    Elsevier  2003 

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  • 透明導電膜の技術

    日本学術振興会透明酸化物光, 電子材料, 委員会 編( Role: Contributor3章.透明導電膜技術の基礎的な性質は何か)

    オーム社  1999  ( ISBN:9784274035166

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    Responsible for pages:47-78   Language:Japanese   Book type:Scholarly book

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  • Advances in photonic glasses : proceedings of the symposium on Advances in Photonic Glasses (Journal of non-crystalline solids, 259)

    editors, J. Heo, W.-T. Han, S.-H. Kim, H. Hosono, M. Nogami( Role: Edit)

    Elsevier  1999 

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▼display all

MISC

  • Formation of oxygen vacancies in high-purity α-quartz exposed to 60Co γ-rays

    梶原浩一, SKUJA Linards, 細野秀雄

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   69th   2022

  • p-Type Transparent Quadruple Perovskite Halide Conductors: Fact or Fiction?

    Sanlue Hu, Bing Xia, Yang-Peng Lin, Takayoshi Katase, Jun Fujioka, Toshio Kamiya, Hideo Hosono, Ke-Zhao Du, Zewen Xiao

    Advanced Functional Materials   30 ( 31 )   2020.8

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    Language:English   Publishing type:Rapid communication, short report, research note, etc. (scientific journal)   Publisher:Wiley-VCH Verlag  

    DOI: 10.1002/adfm.201909906

    Scopus

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  • Recent advances in iron-based superconductors toward applications

    Hideo Hosono, Akiyasu Yamamoto, Hidenori Hiramatsu, Yanwei Ma

    Materials Today   21 ( 3 )   278 - 302   2018.4

  • 結晶性SiO2における酸素ダングリングボンドの発光

    SKUJA Linards, 梶原浩一, GRUBE Jurgis, 細野秀雄

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   64th   2017

  • ゾル-ゲル法で作製したNd-Al共ドープシリカガラスにおけるNdイオンの特徴的な配位環境

    船曳富士, 梶原浩一, 金子健, 金村聖志, 細野秀雄

    ガラスおよびフォトニクス材料討論会講演要旨集   56th   2015

  • ペロブスカイト型Sr1-xLaxSnO3セラミックスの熱電特性

    安川雅啓, 植田和茂, 藤津悟, 細野秀雄

    日本セラミックス協会2014年年会講演予稿集 1P127(ポスター発表)   2014.3

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  • 18O2含浸したアモルファスSiO2における真空紫外光誘起格子間酸素原子の拡散と反応

    梶原浩一, SKUJA Linards, 細野秀雄

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   75th   2014

  • Theoretical analysis of s_± pairing mediated by incommensurate spin fluctuation in heavily electron-doped 1111 iron-based superconductors

    Suzuki K., Usui H., Kuroki K., Iimura S., Sato Y., Matsuishi M., Hosono H.

    Meeting Abstracts of the Physical Society of Japan   68 ( 0 )   576 - 576   2013

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    Language:Japanese   Publisher:The Physical Society of Japan  

    DOI: 10.11316/jpsgaiyo.68.2.3.0_576_1

    CiNii Books

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  • 高純度α-石英におけるケイ素ダングリングボンドの形成

    梶原浩一, SKUJA Linards, 細野秀雄

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   60th   2013

  • Co置換型鉄系超伝導体Ca1111系CaFe1-xCoxAsF(x=0, 0.06, 0.12, 0.2)の75As核NMR(口頭発表)

    堤俊二, 藤原直樹, 松石聡, 細野秀雄

    日本物理学会講演概要集 2011年秋季大会   66 ( 2 )   549 - 549   2011.9

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  • Co置換型鉄系超伝導体Ca1111系CaFe1-xCoxAsF(x=0.06, 0.12)のAs核NMR(口頭発表)

    中野達也, 堤俊二, 藤原直樹, 松石聡, 細野秀雄

    日本物理学会講演概要集 2010年秋季大会   65 ( 2 )   569 - 569   2010.9

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  • Present status of amorphous In-Ga-Zn-O thin-film transistors

    Toshio Kamiya, Kenji Nomura, Hideo Hosono

    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS   11 ( 4 )   2010.8

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    Language:English   Publishing type:Book review, literature introduction, etc.  

    DOI: 10.1088/1468-6996/11/4/044305

    Web of Science

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  • Josephson junction in cobalt-doped BaFe2As2 epitaxial thin films on (La,Sr)(Al,Ta)O-3 bicrystal substrates

    Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto, Hidenori Hiramatsu, Toshio Kamiya, Keiichi Tanabe, Hideo Hosono

    APPLIED PHYSICS LETTERS   96 ( 14 )   142507   2010.4

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  • Fabrication of Atomically Flat ScAlMgO4 Epitaxial Buffer Layer and Low-Temperature Growth of High-Mobility ZnO Films

    Takayoshi Katase, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    CRYSTAL GROWTH & DESIGN   10 ( 3 )   1084 - 1089   2010.3

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  • Neutron diffraction study of phase transitions and thermal expansion of SrFeAsF

    Y. Xiao, Y. Su, R. Mittal, T. Chatterji, T. Hansen, S. Price, C. M. N. Kumar, J. Persson, S. Matsuishi, Y. Inoue, H. Hosono, Th. Brueckel

    PHYSICAL REVIEW B   81 ( 9 )   094523   2010.3

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  • Electronic and magnetic phase diagram of superconductors, SmFeAsO1-xFx

    Yoichi Kamihara, Takatoshi Nomura, Masahiro Hirano, Jung Eun Kim, Kenichi Kato, Masaki Takata, Yasuhiro Kobayashi, Shinji Kitao, Satoshi Higashitaniguchi, Yoshitaka Yoda, Makoto Seto, Hideo Hosono

    NEW JOURNAL OF PHYSICS   12   033005   2010.3

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  • Electronic and lattice structures in SmFeAsO1-xFx probed by x-ray absorption spectroscopy

    C. J. Zhang, H. Oyanagi, Z. H. Sun, Y. Kamihara, H. Hosono

    PHYSICAL REVIEW B   81 ( 9 )   094516   2010.3

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  • Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors

    Toshio Kamiya, Kenji Nomura, Hideo Hosono

    APPLIED PHYSICS LETTERS   96 ( 12 )   122103   2010.3

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  • Device characteristics improvement of a-In-Ga-Zn-O TFTs by low-temperature annealing

    Yutomo Kikuchi, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    THIN SOLID FILMS   518 ( 11 )   3017 - 3021   2010.3

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  • Comprehensive studies on the stabilities of a-In-Ga-Zn-O based thin film transistor by constant current stress

    Kenji Nomura, Toshio Kamiya, Yutomo Kikuchi, Masahiro Hirano, Hideo Hosono

    THIN SOLID FILMS   518 ( 11 )   3012 - 3016   2010.3

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  • Steady-state photoconductivity of amorphous In-Ga-Zn-O

    Dong Hee Lee, Ken-ichi Kawamura, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    THIN SOLID FILMS   518 ( 11 )   3000 - 3003   2010.3

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  • Fabrication of GaN epitaxial thin film on InGaZnO4 single-crystalline buffer layer

    Tomomasa Shinozaki, Kenji Nomura, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    THIN SOLID FILMS   518 ( 11 )   2996 - 2999   2010.3

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  • Enhancement of the critical temperature of the pnictide superconductor LaFeAsO1-xFx studied via As-75 NMR under pressure

    Tatsuya Nakano, Naoki Fujiwara, Kenichiro Tatsumi, Hironari Okada, Hiroki Takahashi, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono

    PHYSICAL REVIEW B   81 ( 10 )   100510   2010.3

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  • Device characteristics improvement of a-In-Ga-Zn-O TFTs by low-temperature annealing

    Yutomo Kikuchi, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    THIN SOLID FILMS   518 ( 11 )   3017 - 3021   2010.3

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  • Steady-state photoconductivity of amorphous In-Ga-Zn-O

    Dong Hee Lee, Ken-ichi Kawamura, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    THIN SOLID FILMS   518 ( 11 )   3000 - 3003   2010.3

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  • Fabrication and electron transport properties of epitaxial films of electron-doped 12CaO center dot 7Al(2)O(3) and 12SrO center dot 7Al(2)O

    Masashi Miyakawa, Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    JOURNAL OF SOLID STATE CHEMISTRY   183 ( 2 )   385 - 391   2010.2

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  • Anomalous He-gas high-pressure studies on superconducting LaO1-xFxFeAs

    W. Bi, H. B. Banks, J. S. Schilling, H. Takahashi, H. Okada, Y. Kamihara, M. Hirano, H. Hosono

    NEW JOURNAL OF PHYSICS   12   023005-023012   2010.2

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  • Pressure dependence of the superconductor transition temperature of Ca(Fe1-xCox)AsF compounds: A comparison with the effect of pressure on LaFeAsO1-xFx

    Hironari Okada, Hiroyuki Takahashi, Satoru Matsuishi, Masahiro Hirano, Hideo Hosono, Kazuyuki Matsubayashi, Yoshiya Uwatoko, Hiroki Takahashi

    PHYSICAL REVIEW B   81 ( 5 )   054507   2010.2

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  • Fabrication and electron transport properties of epitaxial films of electron-doped 12CaO center dot 7Al(2)O(3) and 12SrO center dot 7Al(2)O

    Masashi Miyakawa, Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    JOURNAL OF SOLID STATE CHEMISTRY   183 ( 2 )   385 - 391   2010.2

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  • Material characteristics and applications of transparent amorphous oxide semiconductors

    Toshio Kamiya, Hideo Hosono

    NPG ASIA MATERIALS   2 ( 1 )   15 - 22   2010.1

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    Language:English   Publishing type:Book review, literature introduction, etc.  

    DOI: 10.1038/asiamat.2010.5

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  • 鉄系高温超伝導物質の現状 (特集 先端電子材料の技術シーズと市場ニーズ)

    神原 陽一, 細野 秀雄

    電子材料   49 ( 1 )   18 - 27   2010.1

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    Language:Japanese   Publisher:工業調査会  

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  • 酸化物半導体新材料の設計とアモルファス酸化物TFT開発の現状

    神谷 利夫, 細野 秀雄

    鉱山   63 ( 3 )   20 - 30   2010

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    Language:Japanese   Publisher:金属鉱山会  

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  • 鉄系高温超伝導体の特徴

    神原 陽一, 細野 秀雄

    電子材料 (工業調査会)   49   18 - 27   2010

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  • 透明酸化物の機能探索から開けた新領域

    細野 秀雄

    未来材料   10   2 - 8   2010

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  • ありふれたものから、社会の役立つ新機能素材をつくる材料科学

    細野秀雄

    3 ( 2 )   3 - 5   2010

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  • High Critical Current Density 4 MA/cm(2) in Co-Doped BaFe2As2 Epitaxial Films Grown on (La, Sr)(Al, Ta)O-3 Substrates without Buffer Layers

    Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, Hideo Hosono

    APPLIED PHYSICS EXPRESS   3 ( 6 )   063101   2010

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  • Amorphous In-Ga-Zn-O thin-film transistor with coplanar homojunction structure

    Ayumu Sato, Mikio Shimada, Katsumi Abe, Ryo Hayashi, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    THIN SOLID FILMS   518 ( 4 )   1309 - 1313   2009.12

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  • Electronic state and cage distortion in the room-temperature stable electride [Ca24Al28O64](4+)(O2-)(2-x)(e(-))(2x) as probed by Al-27 NMR

    K. Matsuda, Y. Konaka, Y. Maniwa, S. Matsuishi, H. Hosono

    PHYSICAL REVIEW B   80 ( 24 )   245103   2009.12

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  • Electronic Structures Above Mobility Edges in Crystalline and Amorphous In-Ga-Zn-O: Percolation Conduction Examined by Analytical Model

    Toshio Kamiya, Kenji Nomura, Hideo Hosono

    JOURNAL OF DISPLAY TECHNOLOGY   5 ( 12 )   462 - 467   2009.12

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  • Atomically-flat, chemically-stable, superconducting epitaxial thin film of iron-based superconductor, cobalt-doped BaFe2As2

    Takayoshi Katase, Hidenori Hiramatsu, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    SOLID STATE COMMUNICATIONS   149 ( 47-48 )   2121 - 2124   2009.12

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  • Direct imaging of doped fluorine in LaFeAsO1-XFX superconductor by atomic scale spectroscopy

    Tetsuya Tohei, Teruyasu Mizoguchi, Hidenori Hiramatsu, Yoichi Kamihara, Hideo Hosono, Yuichi Ikuhara

    APPLIED PHYSICS LETTERS   95 ( 19 )   193107   2009.11

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  • Field-modulated thermopower in SrTiO3-based field-effect transistors with amorphous 12CaO center dot 7Al(2)O(3) glass gate insulator

    Hiromichi Ohta, Yumi Masuoka, Ryoji Asahi, Takeharu Kato, Yuichi Ikuhara, Kenji Nomura, Hideo Hosono

    APPLIED PHYSICS LETTERS   95 ( 11 )   113505   2009.9

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  • Effects of post-annealing on (110) Cu(2)O epitaxial films and origin of low mobility in Cu(2)O thin-film transistor

    Kosuke Matsuzaki, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   206 ( 9 )   2192 - 2197   2009.9

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  • High-temperature thermoelectric properties of La-doped Ba 1-xSrxSnO3 ceramics

    Masahiro Yasukawa, Toshio Kono, Kazushige Ueda, Hiroshi Yanagi, Hideo Hosono

    Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy   56 ( 9 )   555 - 560   2009.9

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  • Tin monoxide as an s-orbital-based p-type oxide semiconductor: Electronic structures and TFT application

    Yoichi Ogo, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Mutsumi Kimura, Masahiro Hirano, Hideo Hosono

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   206 ( 9 )   2187 - 2191   2009.9

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  • Fabrication of Flat MgO(111) Films on Al2O3(0001) Substrates by Pulsed Laser Deposition

    Tomofumi Susaki, Sho Kumada, Takayoshi Katase, Kosuke Matsuzaki, Masashi Miyakawa, Hideo Hosono

    APPLIED PHYSICS EXPRESS   2 ( 9 )   2009.9

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  • Field-modulated thermopower in SrTiO3-based field-effect transistors with amorphous 12CaO center dot 7Al(2)O(3) glass gate insulator

    Hiromichi Ohta, Yumi Masuoka, Ryoji Asahi, Takeharu Kato, Yuichi Ikuhara, Kenji Nomura, Hideo Hosono

    APPLIED PHYSICS LETTERS   95 ( 11 )   113505   2009.9

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  • Fabrication of Flat MgO(111) Films on Al2O3(0001) Substrates by Pulsed Laser Deposition

    Tomofumi Susaki, Sho Kumada, Takayoshi Katase, Kosuke Matsuzaki, Masashi Miyakawa, Hideo Hosono

    APPLIED PHYSICS EXPRESS   2 ( 9 )   0914031-3,   2009.9

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  • Thermal conductivity and Seebeck coefficient of 12CaO center dot 7Al(2)O(3) electride with a cage structure

    Sung Wng Kim, Ryuichi Tarumi, Hideo Iwasaki, Hiromichi Ohta, Masahiro Hirano, Hideo Hosono

    PHYSICAL REVIEW B   80 ( 7 )   075201   2009.8

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  • High-Pressure Studies on Superconductivity in LaFeAsO1-x F (x) and SmFeAsO1-x F (x)

    H. Takahashi, H. Okada, K. Igawa, Y. Kamihara, M. Hirano, H. Hosono, K. Matsubayashi, Y. Uwatoko

    JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM   22 ( 6 )   595 - 598   2009.8

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  • Water-induced superconductivity in SrFe2As2

    Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    PHYSICAL REVIEW B   80 ( 5 )   052501   2009.8

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  • Thermal conductivity and Seebeck coefficient of 12CaO center dot 7Al(2)O(3) electride with a cage structure

    Sung Wng Kim, Ryuichi Tarumi, Hideo Iwasaki, Hiromichi Ohta, Masahiro Hirano, Hideo Hosono

    PHYSICAL REVIEW B   80 ( 7 )   075201   2009.8

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  • Field-assisted sustainable O- ion emission from fluorine-substituted 12CaO center dot 7Al(2)O(3) with improved thermal stability

    Jiang Li, Katsuro Hayashi, Masahiro Hirano, Hideo Hosono

    SOLID STATE IONICS   180 ( 17-19 )   1113 - 1117   2009.7

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  • Insular Superconductivity in a Co-Doped Iron Pnictide CaFe1-xCoxAsF

    S. Takeshita, R. Kadono, M. Hiraishi, M. Miyazaki, A. Koda, S. Matsuishi, H. Hosono

    PHYSICAL REVIEW LETTERS   103 ( 2 )   027002   2009.7

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  • Origins of threshold voltage shifts in room-temperature deposited and annealed a-In-Ga-Zn-O thin-film transistors

    Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    APPLIED PHYSICS LETTERS   95 ( 1 )   013502   2009.7

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  • Direct Synthesis of Powdery Inorganic Electride [Ca24Al28O64](4+) (e(-))(4) and Determination of Oxygen Stoichiometry

    Satoru Matsuishi, Takatoshi Nomura, Masahiro Hirano, Katsuaki Kodama, Shin-ichi Shamoto, Hideo Hosono

    CHEMISTRY OF MATERIALS   21 ( 13 )   2589 - 2591   2009.7

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  • Field-assisted sustainable O- ion emission from fluorine-substituted 12CaO center dot 7Al(2)O(3) with improved thermal stability

    Jiang Li, Katsuro Hayashi, Masahiro Hirano, Hideo Hosono

    SOLID STATE IONICS   180 ( 17-19 )   1113 - 1117   2009.7

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  • Origins of threshold voltage shifts in room-temperature deposited and annealed a-In-Ga-Zn-O thin-film transistors

    Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    APPLIED PHYSICS LETTERS   95 ( 1 )   013502   2009.7

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  • Effects of magnetic doping and temperature dependence of phonon dynamics in CaFe1-xCoxAsF compounds (x=0, 0.06, and 0.12)

    R. Mittal, M. Zbiri, S. Rols, Y. Su, Y. Xiao, H. Schober, S. L. Chaplot, M. Johnson, T. Chatterji, S. Matsuishi, H. Hosono, Th. Brueckel

    PHYSICAL REVIEW B   79 ( 21 )   214514   2009.6

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  • Intense Atomic Oxygen Emission from Incandescent Zirconia

    Katsuro Hayashi, Tetsuya Chiba, Jiang Li, Masahiro Hirano, Hideo Hosono

    JOURNAL OF PHYSICAL CHEMISTRY C   113 ( 22 )   9436 - 9439   2009.6

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  • Effects of magnetic doping and temperature dependence of phonon dynamics in CaFe1-xCoxAsF compounds (x=0, 0.06, and 0.12)

    R. Mittal, M. Zbiri, S. Rols, Y. Su, Y. Xiao, H. Schober, S. L. Chaplot, M. Johnson, T. Chatterji, S. Matsuishi, H. Hosono, Th. Brueckel

    PHYSICAL REVIEW B   79 ( 21 )   214514   2009.6

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  • Comparison of crystal structures and the effects of Co substitution in a new member of the Fe-1111 superconductor family AeFeAsF (Ae = Ca and Sr): a possible candidate for a higher-T-c superconductor

    Takatoshi Nomura, Yasunori Inoue, Satoru Matsuishi, Masahiro Hirano, Jung Eun Kim, Kenichi Kato, Masaki Takata, Hideo Hosono

    SUPERCONDUCTOR SCIENCE & TECHNOLOGY   22 ( 5 )   055016   2009.5

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  • Oxygen ion conduction in 12CaO center dot 7Al(2)O(3): O2- conduction mechanism and possibility of O- fast conduction

    Hideo Hosono, Katsuro Hayashi, Koichi Kajihara, Peter V. Sushko, Alexander L. Shluger

    SOLID STATE IONICS   180 ( 6-8 )   550 - 555   2009.5

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  • Heteroepitaxial film growth of layered compounds with the ZrCuSiAs-type and ThCr2Si2-type structures: From Cu-based semiconductors to Fe-based superconductors

    Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   469 ( 9-12 )   657 - 666   2009.5

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  • Pressure studies of (La, Sm)FeAsO1-xFx and LaFePO

    H. Takahashi, H. Okada, K. Igawa, Y. Kamihara, M. Hirano, H. Hosono

    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   469 ( 9-12 )   413 - 417   2009.5

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  • Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x: Tauc-Lorentz optical model and origins of subgap states

    Toshio Kamiya, Kenji Nomura, Hideo Hosono

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   206 ( 5 )   860 - 867   2009.5

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  • Hydrogen permeation of tungsten phosphate glass thin films

    Hiromasa Tawarayama, Hiroshi Kawazoe, Hideo Hosono

    SOLID STATE IONICS   180 ( 6-8 )   556 - 559   2009.5

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  • Isotope Effect on the Infrared Photoluminescence Decay of Interstitial Oxygen Molecules in Amorphous SiO2

    Koichi Kajihara, Taisuke Miura, Hayato Kamioka, Masahiro Hirano, Linards Skuja, Hideo Hosono

    APPLIED PHYSICS EXPRESS   2 ( 5 )   056502-1 - 3,   2009.5

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  • Oxygen Exchange at the Internal Surface of Amorphous SiO2 Studied by Photoluminescence of Isotopically Labeled Oxygen Molecules

    Koichi Kajihara, Taisuke Miura, Hayato Kamioka, Masahiro Hirano, Linards Skuja, Hideo Hosono

    PHYSICAL REVIEW LETTERS   102 ( 17 )   175502-1 - 4   2009.5

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  • Antiferromagnetic bipolar semiconductor LaMnPO with ZrCuSiAs-type structure

    Hiroshi Yanagi, Takumi Watanabe, Katsuaki Kodama, Satoshi Iikubo, Shin-ichi Shamoto, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    JOURNAL OF APPLIED PHYSICS   105 ( 9 )   093916   2009.5

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  • First-principles study of native point defects in crystalline indium gallium zinc oxide

    Hideyuki Omura, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    JOURNAL OF APPLIED PHYSICS   105 ( 9 )   093712   2009.5

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  • Oxide Glass/Amorphous Metal Alloy Laminated Membrane for Hydrogen Separation

    Hiromasa Tawarayama, Hideo Hosono, Shin-ichi Yamaura, Wei Zhang, Akihisa Inoue

    CHEMISTRY LETTERS   38 ( 5 )   502 - 503   2009.5

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  • Two classes of superconductors discovered in our material research: Iron-based high temperature superconductor and electride superconductor

    Hideo Hosono

    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS   469 ( 9-12 )   314 - 325   2009.5

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  • Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x: Tauc-Lorentz optical model and origins of subgap states

    Toshio Kamiya, Kenji Nomura, Hideo Hosono

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   206 ( 5 )   860 - 867   2009.5

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  • Oxygen ion conduction in 12CaO center dot 7Al(2)O(3): O2- conduction mechanism and possibility of O- fast conduction

    Hideo Hosono, Katsuro Hayashi, Koichi Kajihara, Peter V. Sushko, Alexander L. Shluger

    SOLID STATE IONICS   180 ( 6-8 )   550 - 555   2009.5

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  • Co-60 gamma-ray-induced intrinsic defect processes in fluorine-doped synthetic SiO2 glasses of different fluorine concentrations

    Koichi Kajihara, Masahiro Hirano, Linards Skuja, Hideo Hosono

    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS   161 ( 1-3 )   96 - 99   2009.4

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  • Two-Dimensional Spin Density Wave State in LaFeAsO

    Motoyuki Ishikado, Ryoichi Kajimoto, Shin-ichi Shamoto, Masatoshi Arai, Akira Iyo, Kiichi Miyazawa, Parasharam M. Shirage, Hijiri Kito, Hiroshi Eisaki, SungWng Kim, Hideo Hosono, Tatiana Guidi, Robert Bewley, Stephen M. Bennington

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   78 ( 4 )   043705   2009.4

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  • Phonon spectra in CaFe2As2 and Ca0.6Na0.4Fe2As2: Measurement of the pressure and temperature dependence and comparison with ab initio and shell model calculations

    R. Mittal, S. Rols, M. Zbiri, Y. Su, H. Schober, S. L. Chaplot, M. Johnson, M. Tegel, T. Chatterji, S. Matsuishi, H. Hosono, D. Johrendt, Th. Brueckel

    PHYSICAL REVIEW B   79 ( 14 )   144516   2009.4

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  • Phonon spectra in CaFe2As2 and Ca0.6Na0.4Fe2As2: Measurement of the pressure and temperature dependence and comparison with ab initio and shell model calculations

    R. Mittal, S. Rols, M. Zbiri, Y. Su, H. Schober, S. L. Chaplot, M. Johnson, M. Tegel, T. Chatterji, S. Matsuishi, H. Hosono, D. Johrendt, Th. Brueckel

    PHYSICAL REVIEW B   79 ( 14 )   144516   2009.4

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  • Bistable resistance switching in surface-oxidized C12A7:e(-) single-crystal

    Yutaka Adachi, Sung-Wng Kim, Toshio Kamiya, Hideo Hosono

    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS   161 ( 1-3 )   76 - 79   2009.4

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  • Epitaxial film growth and optoelectrical properties of layered semiconductors, LaMnXO (X=P, As, and Sb)

    Kentaro Kayanuma, Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    JOURNAL OF APPLIED PHYSICS   105 ( 7 )   073903   2009.4

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  • Anisotropic carrier transport properties in layered cobaltate epitaxial films grown by reactive solid-phase epitaxy

    Kenji Sugiura, Hiromichi Ohta, Shin-ichi Nakagawa, Rong Huang, Yuichi Ikuhara, Kenji Nomura, Hideo Hosono, Kunihito Koumoto

    APPLIED PHYSICS LETTERS   94 ( 15 )   152105   2009.4

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  • An NMR study on the F-doping evolution of the iron oxypnictide LaFeAs(O1-xFx)

    Y. Nakai, S. Kitagawa, K. Ishida, Y. Kamihara, M. Hirano, H. Hosono

    NEW JOURNAL OF PHYSICS   11   045004   2009.4

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  • Bistable resistance switching in surface-oxidized C12A7:e(-) single-crystal

    Yutaka Adachi, Sung-Wng Kim, Toshio Kamiya, Hideo Hosono

    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS   161 ( 1-3 )   76 - 79   2009.4

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  • Large domain growth of GaN epitaxial films on lattice-matched buffer layer ScAlMgO4

    Takayoshi Katase, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS   161 ( 1-3 )   66 - 70   2009.4

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  • Structural Transformation of Ca-Arrangements and Carrier Transport Properties in Ca0.33CoO2 Epitaxial Films

    Kenji Sugiura, Hiromichi Ohta, Yukiaki Ishida, Rong Huang, Tomohiro Saito, Yuichi Ikuhara, Kenji Nomura, Hideo Hosono, Kunihito Koumoto

    APPLIED PHYSICS EXPRESS   2 ( 3 )   035503   2009.3

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  • Amorphous In-Ga-Zn-O coplanar homojunction thin-film transistor

    Ayumu Sato, Katsumi Abe, Ryo Hayashi, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    APPLIED PHYSICS LETTERS   94 ( 13 )   133502   2009.3

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  • Amorphous In-Ga-Zn-O coplanar homojunction thin-film transistor

    Ayumu Sato, Katsumi Abe, Ryo Hayashi, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    APPLIED PHYSICS LETTERS   94 ( 13 )   133502   2009.3

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  • Pressure-Induced Superconductivity in Iron Pnictide Compound SrFe2As2

    Kazumi Igawa, Hironari Okada, Hiroki Takahashi, Satoru Matsuishi, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono, Kazuyuki Matsubayashi, Yoshiya Uwatoko

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   78 ( 2 )   025001   2009.2

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  • Effect of 3d transition metal doping on the superconductivity in quaternary fluoroarsenide CaFeAsF

    Satoru Matsuishi, Yasunori Inoue, Takatoshi Nomura, Youichi Kamihara, Masahiro Hirano, Hideo Hosono

    NEW JOURNAL OF PHYSICS   11   025012   2009.2

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  • Mossbauer Spectroscopy of La0.87Ca0.13FePO and LaFeAsO0.93F0.07 under External Magnetic Field and Nuclear Resonant Inelastic Scattering of La0.87Ca0.13FePO

    Satoshi Higashitaniguchi, Makoto Seto, Shinji Kitao, Yasuhiro Kobayashi, Makina Saito, Masayuki Kurokuzu, Takaya Mitsui, Yoshitaka Yoda, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   78 ( 2 )   024704   2009.2

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  • Magnetic order in the CaFe1-xCoxAsF (x=0.00,0.06,0.12) superconducting compounds

    Y. Xiao, Y. Su, R. Mittal, T. Chatterji, T. Hansen, C. M. N. Kumar, S. Matsuishi, H. Hosono, Th. Brueckel

    PHYSICAL REVIEW B   79 ( 6 )   060504   2009.2

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  • As-75-NMR Studies on LaFeAsO1-xFx (x=0.14) under a Pressure of 3 GPa

    Kenichiro Tatsumi, Naoki Fujiwara, Hironari Okada, Hiroki Takahashi, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   78 ( 2 )   023709   2009.2

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  • Pressure Study of Superconducting Oxypnictide LaFePO

    Kazumi Igawa, Hironari Okada, Kazunobu Arii, Hiroki Takahashi, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono, Satoshi Nakano, Takumi Kikegawa

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   78 ( 2 )   023701   2009.2

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  • Temperature-dependent pseudogap in the oxypnictides LaFeAsO1-xFx and LaFePO1-xFx seen via angle-integrated photoemission

    Y. Ishida, T. Shimojima, K. Ishizaka, T. Kiss, M. Okawa, T. Togashi, S. Watanabe, X. -Y. Wang, C. -T. Chen, Y. Kamihara, M. Hirano, H. Hosono, S. Shin

    PHYSICAL REVIEW B   79 ( 6 )   060503   2009.2

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  • Layered mixed-anion compounds: Epitaxial growth, active function exploration, and device application

    Hidenori Hiramatsu, Yoichi Kamihara, Hiroshi Yanagi, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY   29 ( 2 )   245 - 253   2009.1

  • Oxide Glass/Amorphous Metal Alloy Laminated Membrane for Hydrogen Separation

    Hiromasa Tawarayama, Hideo Hosono, Shin-ichi Yamaura, Wei Zhang, Akihisa Inoue

    Chemistry Letters   38 ( 5 )   502 - 503   2009

  • 鉄系高温超伝導体発見の経緯と概要

    神原陽一, 細野秀雄

    高圧力の科学と技術   19 ( 2 )   97 - 105   2009

  • High-Pressure 57Fe Mo¨ssbauer Spectroscopy of LaFeAsO

    Takateru KAWAKAMI, Takanori KAMATANI, Hironari OKADA, Hiroki TAKAHASHI, Saburo NASU, Yoichi KAMIHARA, Masahiro HIRANO, Hideo HOSONO

    J.Phys.Soc.Jpn.   78   123703-06   2009

  • 75As and 139La NMR studies on LaFeAs(O1-xFx)

    K. Ishida, Y. Nakai, S. Kitagawa, Y. Kamihara, M. Hirano, H. Hosono

    Physica B   404   3089 - 3094   2009

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  • Sustainable Thermionic O- Emission from Stoichiometric 12CaO center dot 7Al(2)O(3) with Nanoporous Crystal Structure

    Jiang Li, Katsuro Hayashi, Masahiro Hirano, Hideo Hosono

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY   156 ( 1 )   G1 - G5   2009

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  • Humidity-Sensitive Electrical Conductivity in Ca12Al14-xSixO32Cl2+x (0 &lt;= x &lt;= 3.4) Ceramics

    Katsuro Hayashi, Hiroki Muramatsu, Satoru Matsuishi, Toshio Kamiya, Hideo Hosono

    ELECTROCHEMICAL AND SOLID STATE LETTERS   12 ( 2 )   J11 - J13   2009

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  • Pseudoisotropic Upper Critical Field in Cobalt-Doped SrFe2As2 Epitaxial Films

    S.A.Baily, Y.Kohama, H.Hiramatsu, B.Maiorov, F.F.Balakirev, M.Hirano, H.Hosono

    Phys.Rev.lett.   102   117004   2009

  • 鉄系高温超伝導体の発見とその後の進展

    細野秀雄

    JST 中国科学技術月報   ( 28 )   2009

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  • 新系統(鉄イオンを含む層状化合物)の高温超伝導質の発見

    細野秀雄

    応用物理.   78   31 - 36   2009

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  • Two-Dimensional Spin Dynamics in the Itinerant Ferromagnet LaCoPO Revealed by Magnetization and 31P-NMR Measurements

    Hitoshi Sugawara, Kenji Ishida, Yusuke Nakai, Hiroshi Yanagi, Toshio Kamiya, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono

    Journal of the Physical Society of Japan   78   113705 - 113708   2009

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  • Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

    Toshio Kamiya, Kenji Nomura, Hideo Hosono

    J. Displ. Technol.   5   273   2009

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  • Adventures in Material Exploration since the 1st Otto-Schott Research Award:A Small Research History

    HIDEO HOSONO

    97 - 105   2009

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  • Two classes of superconductors discovered in our material research: Iron-based high temperature superconductor and electride superconductor

    Hideo Hosono

    Physica C: Superconductivity and its Applications   469 ( 9-12 )   314 - 325   2009

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  • Systematic 75As NMR study of the dependence of low-lying excitations on F-doping in the iron oxypnictide LaFeAsO1-xFx

    Y. Nakai, S. Kitagawa, K. Ishida, Y. Kamihara, M. Hirano, H. Hosono

    Phys. Rev. B   79 ( 21 )   212506   2009

  • To eaht extet iron-pnictide new superconductors have clarified: a progress report

    K. Ishida, Y. Nakai, H. Hosono

    J. Phys. Soc. Jpn.   78   062001-1 - 20   2009

  • Iron Pnicide Superconductors:Discovery and Current Status

    H.Hosono

    Material Matters   4(2)   32 - 35   2009

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  • Tin monoxide as an s-orbital-based p-type semiconductor:Electronic structures and TFT application

    Yoichi Ogo, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Mutsumi Kimura, Masahiro Hirano, Hideo Hosono

    Physics Status Solidi A   1 - 5   2009

  • Photofield-Effect in Amorphous In-Ga-Zn-O (a-IGZO) Thin-Film Transistors

    Tze-Ching Fung, Chiao-Shun Chuang, Kenji Nomura, Han-Ping David Shieh, Hideo Hosono, Jerzy Kanicki

    Journal of Information Display   9   21 - 29   2009

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  • Photo-induced chrage state conversion of Eu2+ in Ca2ZnSi2O7

    H. Kamioka, M. Hirano, H. Hosono

    J. Appl. Phys.   106 ( 5 )   053105   2009

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  • Low Threshold Voltage and Carrier Injection Properties of Inverted Organic Light-Emitting Diodes with [Ca24Al28O64]4+(4e-)Cathode and Cu2-xSe Anode

    Hiroshi Yanagi, Ki-Beom Kim, Ikue Koizumi, Maiko Kikuchi, Hidenori Hiramatsu, Masashi Miyakawa, Toshi Kamiya, Masahiro Hirano, Hideo Hosono

    J.Phys.Chem.C,   113 ( 42 )   18379 - 18384   2009

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  • 鉄系の高温超伝導体の発見ー機能探索のセレンディピティー

    細野秀雄

    化学   64   30 - 35   2009

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  • 75As and 139La NMR studies on LaFeAs(O1-xFx)

    K. Ishida, Y. Nakai, S. Kitagawa, Y. Kamihara, M. Hirano, H. Hosono

    Physica B   404   3089 - 3094   2009

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  • Sustainable Thermionic O- Emission from Stoichiometric 12CaO center dot 7Al(2)O(3) with Nanoporous Crystal Structure

    Jiang Li, Katsuro Hayashi, Masahiro Hirano, Hideo Hosono

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY   156 ( 1 )   G1 - G5   2009

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  • Humidity-sensitive electrical conductivity in Ca12 Al14-x Six O32 Cl2+x (0≤x≤3.4) ceramics

    Katsuro Hayashi, Hiroki Muramatsu, Satoru Matsuishi, Toshio Kamiya, Hideo Hosono

    Electrochemical and Solid-State Letters   12 ( 2 )   J11 - J13   2009

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    DOI: 10.1149/1.3032908

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  • Ubiquitous Element Strategy for Functional Inorganic Materials

    HOSONO Hideo

    tits   14 ( 3月号 )   54 - 59   2009

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  • 酸化物半導体とTFT: 総論;

    細野秀雄

    月刊ディスプレイ   17 - 25   2009

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  • Pseudoisotropic Upper Critical Field in Cobalt-Doped SrFe2As2 Epitaxial Films

    S.A.Baily, Y.Kohama, H.Hiramatsu, B.Maiorov, F.F.Balakirev, M.Hirano, H.Hosono

    Phys.Rev.lett.   102   117004   2009

  • 12CaO・7Al2O3 (C12A7) 系の機能性透明導電体材料

    林克郎, 細野秀雄

    表面技術   60   641 - 646   2009

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  • Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

    Toshio Kamiya, Kenji Nomura, Hideo Hosono

    J. Displ. Technol.   5   273   2009

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  • Adventures in Material Exploration since the 1st Otto-Schott Research Award:A Small Research History

    HIDEO HOSONO

    97 - 105   2009

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  • High-Pressure 57Fe Mo¨ssbauer Spectroscopy of LaFeAsO

    Takateru KAWAKAMI, Takanori KAMATANI, Hironari OKADA, Hiroki TAKAHASHI, Saburo NASU, Yoichi KAMIHARA, Masahiro HIRANO, Hideo HOSONO

    J.Phys.Soc.Jpn.   78   123703-06   2009

  • Pressure effects on T-c of Iron-based Layered Superconductor LaTMPO (TM = Fe, Ni)

    K. Igawa, K. Arii, Y. Takahashi, H. Okada, H. Takahashi, Y. Kamihara, M. Hirano, H. Hiramatsu, T. Watanabe, H. Yanagi, T. Kamiya, H. Hosono, K. Matsubayashi, Y. Uwatoko

    25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 5   150   052075-052078   2009

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  • As-75 and La-139 NMR/NQR investigations of iron-based superconductor LaFeAs(O0.89F0.11)

    Y. Nakai, S. Kitagawa, K. Ishida, Y. Kamihara, M. Hirano, H. Hosono

    25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 5   150   052179-052182   2009

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  • Local lattice response in LaFeAsO0.93F0.07 probed by x-ray absorption spectroscopy: Evidence for carrier-induced lattice distortion

    H. Oyanagi, C. J. Zhang, Z. H. Sun, Y. Kamihara, H. Hosono

    14TH INTERNATIONAL CONFERENCE ON X-RAY ABSORPTION FINE STRUCTURE (XAFS14), PROCEEDINGS   190   012094-012097   2009

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  • Photoluminescence of CuInS2-based semiconductor quantum dots; Its origin and the effect of ZnS coating

    Katsuhiro Nose, Naoya Fujita, Takahisa Omata, Shinya Otsuka-Yao-Matsuo, Wataru Kato, Masato Uehara, Hiroyuki Nakamura, Hideaki Maeda, Hayato Kamioka, Hideo Hosono

    Journal of Physics: Conference Series   165   012028-012031   2009

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    Language:English   Publisher:Institute of Physics Publishing  

    DOI: 10.1088/1742-6596/165/1/012028

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  • 鉄ニクタイド超伝導体:発見と現状

    細野秀雄

    Materials Matters   4(2)   4 - 7   2009

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  • 鉄系超電導物質

    細野秀雄, 松石聡, 野村尚利, 平松秀典

    日本物理学会誌   64   807 - 817   2009

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  • Low Threshold Voltage and Carrier Injection Properties of Inverted Organic Light-Emitting Diodes with [Ca24Al28O64]4+(4e-)Cathode and Cu2-xSe Anode

    Hiroshi Yanagi, Ki-Beom Kim, Ikue Koizumi, Maiko Kikuchi, Hidenori Hiramatsu, Masashi Miyakawa, Toshi Kamiya, Masahiro Hirano, Hideo Hosono

    J.Phys.Chem.C,   113 ( 42 )   18379 - 18384   2009

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  • Angular and field properties of the critical current and melting line of Co-doped SrFe<inf>2</inf>As<inf>2</inf> epitaxial films

    B. Maiorov, S. A. Baily, Y. Kohama, H. Hiramatsu, L. Civale, M. Hirano, H. Hosono

    Superconductor Science and Technology   22 ( 12 )   125011 - 12   2009

  • Electromagnetic properties of undoped LaFePnO (Pn = P, As)

    Y. Kamihara, T. Watanabe, T. Nomura, S. W. Kim, T. Kamiya, M. Hirano, H. Hosono

    25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 5   150   052090   2009

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  • Two-Dimensional Spin Dynamics in the Itinerant Ferromagnet LaCoPO Revealed by Magnetization and 31P-NMR Measurements

    Hitoshi Sugawara, Kenji Ishida, Yusuke Nakai, Hiroshi Yanagi, Toshio Kamiya, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono

    Journal of the Physical Society of Japan   78   113705 - 113708   2009

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  • Pressure enhancement of superconductivity in an iron-based layered compound LaFeAsO(1-x)F(x)

    H. Takahashi, K. Igawa, Y. Takahashi, K. Arii, H. Okada, Y. Kamihara, M. Hirano, H. Hosono, K. Matsubayashi, Y. Uwatoko, S. Nakano, T. Kikegawa

    25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PT 5A   150 ( 5a )   052257-052260   2009

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  • Tin monoxide as an s-orbital-based p-type semiconductor:Electronic structures and TFT application

    Yoichi Ogo, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Mutsumi Kimura, Masahiro Hirano, Hideo Hosono

    Physics Status Solidi A   1 - 5   2009

  • Photofield-Effect in Amorphous In-Ga-Zn-O (a-IGZO) Thin-Film Transistors

    Tze-Ching Fung, Chiao-Shun Chuang, Kenji Nomura, Han-Ping David Shieh, Hideo Hosono, Jerzy Kanicki

    Journal of Information Display   9   21 - 29   2009

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  • 鉄の高温超伝導

    細野秀雄, 平野正浩

    科学   79   1096 - 1101   2009

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  • Engineering application of solid state physics: Carrier transport properties and electronic structures of amorphous oxide semiconductors: the present status

    Solid state physics   44 ( 9 )   621 - 633   2009

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  • Photo-induced chrage state conversion of Eu2+ in Ca2ZnSi2O7

    H. Kamioka, M. Hirano, H. Hosono

    J. Appl. Phys.   106 ( 5 )   053105   2009

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  • Systematic 75As NMR study of the dependence of low-lying excitations on F-doping in the iron oxypnictide LaFeAsO1-xFx

    Y. Nakai, S. Kitagawa, K. Ishida, Y. Kamihara, M. Hirano, H. Hosono

    Phys. Rev. B   79 ( 21 )   212506   2009

  • To eaht extet iron-pnictide new superconductors have clarified: a progress report

    K. Ishida, Y. Nakai, H. Hosono

    J. Phys. Soc. Jpn.   78   062001-1 - 20   2009

  • 酸化物半導体とTFT:総論

    細野秀雄

    月刊ディスプレイ   15   17 - 25   2009

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  • 透明回路

    野村研二, 細野秀雄

    映像情報メディア学会誌   63(5)   66 - 68   2009

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  • 化学の枠を超える新しい化学

    上村大輔, 中村栄一, 細野秀雄

    現代化学   460   16 - 23   2009

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  • Iron Pnicide Superconductors:Discovery and Current Status

    H.Hosono

    Material Matters   4(2)   32 - 35   2009

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  • 鉄系の高温超電導体の発見!

    細野秀雄

    化学   64 ( 4 )   30 - 35   2009

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  • 鉄系高温超伝導体の発見と進展

    細野秀雄

    未来材料、9,(2)14-23   9 ( 2 )   14 - 23   2009

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  • Low-temperature lattice structure anomaly in the LaFeAsO0.93F0.07 superconductor by x-ray absorption spectroscopy: Evidence for a strong electron-phonon interaction

    C. J. Zhang, H. Oyanagi, Z. H. Sun, Y. Kamihara, H. Hosono

    PHYSICAL REVIEW B   78 ( 21 )   214513   2008.12

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  • Crystallographic phase transition and high-T-c superconductivity in LaFeAsO:F

    T. Nomura, S. W. Kim, Y. Kamihara, M. Hirano, P. V. Sushko, K. Kato, M. Takata, A. L. Shluger, H. Hosono

    SUPERCONDUCTOR SCIENCE & TECHNOLOGY   21 ( 12 )   9   2008.12

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  • Crystallographic phase transition and high-T-c superconductivity in LaFeAsO:F

    T. Nomura, S. W. Kim, Y. Kamihara, M. Hirano, P. V. Sushko, K. Kato, M. Takata, A. L. Shluger, H. Hosono

    SUPERCONDUCTOR SCIENCE & TECHNOLOGY   21 ( 12 )   125028,   2008.12

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  • Characterization of copper selenide thin film hole-injection layers deposited at room temperature for use with p-type organic semiconductors

    Hidenori Hiramatsu, Ikue Koizumi, Ki-Beom Kim, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Noriaki Matsunami, Hideo Hosono

    JOURNAL OF APPLIED PHYSICS   104 ( 11 )   113723   2008.12

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  • Hall coefficient and H<inf>c2</inf> in underdoped LaFeAsO <inf>0.95</inf>F<inf>0.05</inf>

    Y. Kohama, Y. Kamihara, S. Riggs, F. F. Balakirev, T. Atake, M. Jaime, M. Hirano, H. Hosono

    EPL   84 ( 3 )   37005,   2008.11

  • Cobalt-Substitution-Induced Superconductivity in a New Compound with ZrCuSiAs-Type Structure, SrFeAsF

    Satoru Matsuishi, Yasunori Inoue, Takatoshi Nomura, Masahiro Hirano, Hideo Hosono

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   77 ( 11 )   113709   2008.11

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  • Preparation of Fe-oxypnictides superconductors: solid-state sintering, high pressure synthesis and flux method

    Sung Wng Kim, Yoichi Kamihara, Seok-Gyu Yoon, Hyuk-Su Han, Takatoshi Nomura, Satoru Matsuishi, Koichi Nakao, Keiichi Tanabe, Masahiro Hirano, Hideo Hosono

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   77   23 - 26   2008.11

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  • Tetragonal-orthorhombic phase transition and F-doping effects on the crystal structure in the iron-based high-T-c superconductor LaFeAsO

    Takatoshi Nomura, Sung Wng Kim, Yoichi Kamihara, Masahiro Hirano, Peter V. Sushko, Kenichi Kato, Masaki Takata, Alexander L. Shluger, Hideo Hosono

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   77   32 - 35   2008.11

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  • Mechanism of phase transitions and electronic density of states in LaFeAsO1-xFx and SmFeAsO1-xFx from ab initio density functional calculations

    Peter V. Sushko, Alexander L. Shluger, Masahiro Hirano, Hideo Hosono

    PHYSICAL REVIEW B   78 ( 17 )   172508   2008.11

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  • Epitaxial growth of high mobility Cu(2)O thin films and application to p-channel thin film transistor

    Kosuke Matsuzaki, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    APPLIED PHYSICS LETTERS   93 ( 20 )   202107   2008.11

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  • Iron-specific phonon density of states in the superconductors LaFeAsO(1-x)F(x) and La(1-x)Ca(x)FePO

    Satoshi Higashitaniguchi, Makoto Seto, Shinji Kitao, Yasuhiro Kobayashi, Makina Saito, Ryo Masuda, Takaya Mitsui, Yoshitaka Yoda, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono

    PHYSICAL REVIEW B   78 ( 17 )   174507   2008.11

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  • Coexistence of superconductivity and antiferromagnetic ordering in the layered superconductor SmFePO

    Yoichi Kamihara, Hidenori Hiramatsu, Masahiro Hirano, Yasuhiro Kobayashi, Shinji Kitao, Satoshi Higashitaniguchi, Yoshitaka Yoda, Makoto Seto, Hideo Hosono

    PHYSICAL REVIEW B   78 ( 18 )   184512   2008.11

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  • Tetragonal-orthorhombic phase transition and F-doping effects on the crystal structure in the iron-based high-T-c superconductor LaFeAsO

    Takatoshi Nomura, Sung Wng Kim, Yoichi Kamihara, Masahiro Hirano, Peter V. Sushko, Kenichi Kato, Masaki Takata, Alexander L. Shluger, Hideo Hosono

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   77   32 - 35   2008.11

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  • Mechanism of phase transitions and electronic density of states in LaFeAsO1-xFx and SmFeAsO1-xFx from ab initio density functional calculations

    Peter V. Sushko, Alexander L. Shluger, Masahiro Hirano, Hideo Hosono

    PHYSICAL REVIEW B   78 ( 17 )   172508   2008.11

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  • Electronic and magnetic properties of layered LnFePO (Ln = La and Ce)

    Yoichi Kamihara, Hidenori Hiramatsu, Masahiro Hirano, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono

    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS   69 ( 11 )   2916 - 2918   2008.11

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  • Superconductivity Induced by Co-Doping in Quaternary Fluoroarsenide CaFeAsF

    Satoru Matsuishi, Yasunori Inoue, Takatoshi Nomura, Hiroshi Yanagi, Masahiro Hirano, Hideo Hosono

    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY   130 ( 44 )   14428 - +   2008.11

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  • Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O(2) annealing

    Kenji Nomura, Toshio Kamiya, Hiromichi Ohta, Masahiro Hirano, Hideo Hosono

    APPLIED PHYSICS LETTERS   93 ( 19 )   192107   2008.11

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  • Superconductivity under High Pressure in LaFeAsO

    Hironari Okada, Kazumi Igawa, Hiroki Takahashi, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono, Kazuyuki Matsubayashi, Yoshiya Uwatoko

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   77 ( 11 )   113712   2008.11

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  • Heteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO

    Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    APPLIED PHYSICS LETTERS   93 ( 16 )   162504   2008.10

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  • Solid State Syntheses of 12SrO center dot 7Al(2)O(3) and Formation of High Density Oxygen Radical Anions, O- and O-2(-)

    Katsuro Hayashi, Naoto Ueda, Satoru Matsuishi, Masahiro Hirano, Toshio Kamiya, Hideo Hosono

    CHEMISTRY OF MATERIALS   20 ( 19 )   5987 - 5996   2008.10

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  • Coexistence of Supercondcutivity and Magnetism in LaFeAs(O0.94F0.06) Probed by Muon Spin Relaxation

    Soshi Takeshita, Ryosuke Kadono, Masatoshi Hiraishi, Masanori Miyazaki, Akihiro Koda, Yoichi Kamihara, Hideo Hosono

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   77 ( 10 )   103703-1-4   2008.10

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  • Spin Ordering in LaFeAsO and Its Suppression in Superconductor LaFeAsO0.89F0.11 Probed by Mossbauer Spectroscopy

    Shinji Kitao, Yasuhiro Kobayashi, Satoshi Higashitaniguchi, Makina Saito, Yoichi Kamihara, Masahiro Hirano, Takaya Mitsui, Hideo Hosono, Makoto Seto

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   77 ( 10 )   103706   2008.10

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  • Solid State Syntheses of 12SrO center dot 7Al(2)O(3) and Formation of High Density Oxygen Radical Anions, O- and O-2(-)

    Katsuro Hayashi, Naoto Ueda, Satoru Matsuishi, Masahiro Hirano, Toshio Kamiya, Hideo Hosono

    CHEMISTRY OF MATERIALS   20 ( 19 )   5987 - 5996   2008.10

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  • Low and small resistance hole-injection barrier for NPB realized by wide-gap p-type degenerate semiconductor, LaCuOSe : Mg

    Hiroshi Yanagi, Maiko Kikuchi, Ki-Beom Kim, Hidenori Hiramatsu, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    ORGANIC ELECTRONICS   9 ( 5 )   890 - 894   2008.10

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  • Superconductivity in Epitaxial Thin Films of Co-Doped SrFe2As2 with Bilayered FeAs Structures and their Magnetic Anisotropy

    Hidenori Hiramatsu, Takayoshi Katase, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    APPLIED PHYSICS EXPRESS   1 ( 10 )   101702   2008.10

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  • Intrinsic defect formation in amorphous SiO2 by electronic excitation: Bond dissociation versus Frenkel mechanisms

    Koichi Kajihara, Masahiro Hirano, Linards Skuja, Hideo Hosono

    Physical Review B - Condensed Matter and Materials Physics   78 ( 9 )   094201   2008.9

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  • Possible Unconventional Superconductivity in Iron-Based Layered Compound LaFePO: Study of Heat Capacity

    Kohama Yoshimitsu, Kamihara Yoichi, Kawaji Hitoshi, Atake Tooru, Hirano Masahiro, Hosono Hideo

    Journal of the Physical Society of Japan   77 ( 9 )   94715 - 94715   2008.9

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    DOI: 10.1143/jpsj.77.094715

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  • Electronic structure and electron correlation in LaFeAsO1-xFx and LaFePO1-xFx

    Walid Malaeb, Teppei Yoshida, Takashi Kataoka, Atsushi Fujimori, Masato Kubota, Kanta Ono, Hidetomo Usu, Kazuhiko Kuroki, Ryotaro Arita, Hideo Aoki, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   77 ( 9 )   093714   2008.9

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  • Superconducting Transition in Electron-Doped 12CaO・7Al_2O_3

    KIM Sung Wng, MIYAKAWA Masashi, HIRANO Masahiro, KOHAMA Yoshimitsu, KAWAJI Hitoshi, ATAKE Tooru, IKEGAMI Hiroki, KONO Kimitoshi, HOSONO Hideo

    MATERIALS TRANSACTIONS   49 ( 8 )   1748 - 1752   2008.8

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    It was reported that a mixed light metal oxide compound, 12CaO&middot;7Al2O3 (C12A7), which is known as a constituent of aluminous cement, became a superconductor at an ambient pressure by the exclusive replacement of extra-framework oxygen ions in subnanometer-sized crystallographic cages with electrons. Temperature dependences of resistivity, magnetic susceptibility, and magnetic field dependent resistivity of single-crystals and thin films revealed superconducting transition at temperature (Tc) of &sim;0.4 K and a critical magnetic field of &sim;30 mT. Tc varies 0.2&ndash;0.4 K with the electron concentration. The interaction of the anionic electrons in the free space (cages) with the cationic framework may be responsible for the emergence of the superconducting state.

    DOI: 10.2320/matertrans.MBW200717

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  • Relationship between non-localized tail states and carrier transport in amorphous oxide semiconductor, In-Ga-Zn-O

    K. Nomura, T. Kamiya, H. Ohta, K. Shimizu, M. Hirano, H. Hosono

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   205 ( 8 )   1910 - 1914   2008.8

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  • Spin dynamics in iron-based layered superconductor (La(0.87)Ca(0.13))FePO revealed by (31)P and (139)La NMR studies

    Yusuke Nakai, Kenji Ishida, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono

    PHYSICAL REVIEW LETTERS   101 ( 7 )   077006   2008.8

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  • Amorphous Sn-Ga-Zn-O channel thin-film transistors

    Youichi Ogo, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   205 ( 8 )   1920 - 1924   2008.8

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  • Fabrication and transport properties of 12CaO center dot 7Al(2)O(3) (C12A7) electride nanowire

    Y. Nishio, K. Nomura, M. Miyakawa, K. Hayashi, H. Yanagi, T. Kamiya, M. Hirano, H. Hosono

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   205 ( 8 )   2047 - 2051   2008.8

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  • Nickel-based layered superconductor, LaNiOAs

    Takumi Watanabe, Hiroshi Yanagi, Yoichi Kamihara, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    JOURNAL OF SOLID STATE CHEMISTRY   181 ( 8 )   2117 - 2120   2008.8

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  • Electrical and optical properties of copper-based chalcogenide thin films deposited by pulsed laser deposition at room temperature: Toward p-channel thin film transistor fabricable at room temperature

    Hidenori Hiramatsu, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Noriaki Matsunami, Ken-ichi Shimizu, Hideo Hosono

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   205 ( 8 )   2007 - 2012   2008.8

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  • Fabrication and transport properties of 12CaO center dot 7Al(2)O(3) (C12A7) electride nanowire

    Y. Nishio, K. Nomura, M. Miyakawa, K. Hayashi, H. Yanagi, T. Kamiya, M. Hirano, H. Hosono

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   205 ( 8 )   2047 - 2051   2008.8

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  • Interface electronic structures of zinc oxide and metals: First-principle study

    T. Kamiya, K. Tajima, K. Nomura, Hiroshi Yanagi, H. Hosono

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   205 ( 8 )   1929 - 1933   2008.8

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  • Zn-ln-O based thin-film transistors: Compositional dependence

    N. Itagaki, T. Iwasaki, H. Kumomi, T. Den, K. Nomura, T. Kamiya, H. Hosono

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   205 ( 8 )   1915 - 1919   2008.8

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  • Ferromagnetic spin fluctuation in LaFeAsO1-x Fx

    Yoshimitsu Kohama, Yoichi Kamihara, Masahiro Hirano, Hitoshi Kawaji, Tooru Atake, Hideo Hosono

    Physical Review B - Condensed Matter and Materials Physics   78 ( 2 )   020512   2008.7

  • Growth of 12CaO·7Al2O3 single crystal with tetragonal symmetry by Czochralski method

    Kazuhisa Kurashige, Shunsuke Ueda, Masashi Miyakawa, Yoshitake Toda, Satoru Matsuishi, Sungwng Kim, Masahiro Hirano, Hideo Hosono

    Thin Solid Films   516 ( 17 )   5772 - 5776   2008.7

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  • Control of carrier concentration and surface flattening of CuGaO2 epitaxial films for a p-channel transparent transistor

    Takashi Mine, Hiroshi Yanagi, Kenji Nomura, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    THIN SOLID FILMS   516 ( 17 )   5790 - 5794   2008.7

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  • Fabrication of ScAlMgO4 epitaxial thin films using ScGaO3(ZnO)(m) buffer layers and its application to lattice-matched buffer layer for ZnO epitaxial growth

    Takayoshi Katase, Kenji Noinura, Hirornichi Ohta, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    THIN SOLID FILMS   516 ( 17 )   5842 - 5846   2008.7

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  • p-channel thin-film transistor using p-type oxide semiconductor, SnO

    Yoichi Ogo, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    APPLIED PHYSICS LETTERS   93 ( 3 )   032113   2008.7

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  • Growth of 12CaO center dot 7Al(2)O(3) single crystal with tetragonal symmetry by Czochralski method

    Kazuhisa Kurashige, Shunsuke Ueda, Masashi Miyakawa, Yoshitake Toda, Satoru Matsuishi, Sungwng Kim, Masahiro Hirano, Hideo Hosono

    THIN SOLID FILMS   516 ( 17 )   5772 - 5776   2008.7

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  • Growth of 12CaO center dot 7Al(2)O(3) single crystal with tetragonal symmetry by Czochralski method

    Kazuhisa Kurashige, Shunsuke Ueda, Masashi Miyakawa, Yoshitake Toda, Satoru Matsuishi, Sungwng Kim, Masahiro Hirano, Hideo Hosono

    THIN SOLID FILMS   516 ( 17 )   5772 - 5776   2008.7

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  • Specific contact resistances between amorphous oxide semiconductor In-Ga-Zn-O and metallic electrodes

    Yasuhiro Shimura, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    THIN SOLID FILMS   516 ( 17 )   5899 - 5902   2008.7

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  • Nickel-based phosphide superconductor with infinite-layer structure, BaNi2P2

    Takashi Mine, Hiroshi Yanagi, Toshio Kamiya, Yoichi Karnihara, Masahiro Hirano, Hideo Hosono

    SOLID STATE COMMUNICATIONS   147 ( 3-4 )   111 - 113   2008.7

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  • Evolution from itinerant antiferromagnet to unconventional superconductor with fluorine doping in LaFeAs(O1-xFx) revealed by As-75 and La-139 nuclear magnetic resonance

    Yusuke Nakai, Kenji Ishida, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   77 ( 7 )   073701   2008.7

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  • Specific contact resistances between amorphous oxide semiconductor In-Ga-Zn-O and metallic electrodes

    Yasuhiro Shimura, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    THIN SOLID FILMS   516 ( 17 )   5899 - 5902   2008.7

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  • Heteroepitaxial growth of layered semiconductors, LaZnOPn (Pn = P and As)

    Kentaro Kayanuma, Ryuto Kawamura, Hidenori Hiramatsu, Hiroshi Yanagi, Masahiro Hirano, Toshio Kamiya, Hideo Hosono

    THIN SOLID FILMS   516 ( 17 )   5800 - 5804   2008.7

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  • Superconducting gap and pseudogap in iron-based layered superconductor La(O1-xFx)FeAs

    Takafumi Sato, Seigo Souma, Kosuke Nakayama, Kensei Terashima, Katsuaki Sugawara, Takashi Takahashi, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   77 ( 6 )   063708   2008.6

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  • Electromagnetic properties and electronic structure of the iron-based layered superconductor LaFePO

    Yoichi Kamihara, Masahiro Hirano, Hiroshi Yanagi, Toshio Kamiya, Yuji Saitoh, Eiji Ikenaga, Keisuke Kobayashi, Hideo Hosono

    PHYSICAL REVIEW B   77 ( 21 )   214515   2008.6

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  • Itinerant ferromagnetism in the layered crystals LaCoOX (X=P,As)

    Hiroshi Yanagi, Ryuto Kawamura, Toshio Kamiya, Yoichi Kamihara, Masahiro Hirano, Tetsuya Nakamura, Hitoshi Osawa, Hideo Hosono

    PHYSICAL REVIEW B   77 ( 22 )   224431   2008.6

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  • Factors controlling electron transport properties in transparent amorphous oxide semiconductors

    Hideo Hosono, Kenji Nomura, Youichi Ogo, Tomoya Uruga, Toshio Kamiya

    JOURNAL OF NON-CRYSTALLINE SOLIDS   354 ( 19-25 )   2796 - 2800   2008.5

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  • Superconductivity at 43 K in an iron-based layered compound LaO1-xFxFeAs

    Hiroki Takahashi, Kazumi Igawa, Kazunobu Arii, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono

    NATURE   453 ( 7193 )   376 - 378   2008.5

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  • A possible ground state and its electronic structure of a mother material (LaOFeAs) of new superconductors

    Shoji Ishibashi, Kiyoyuki Terakura, Hideo Hoson

    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   77 ( 5 )   053709-1-4   2008.5

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  • Subgap states in transparent amorphous oxide semiconductor, In-Ga-Zn-O, observed by bulk sensitive x-ray photoelectron spectroscopy

    Kenji Nomura, Toshio Kamiya, Hiroshi Yanagi, Eiji Ikenaga, Ke Yang, Keisuke Kobayashi, Masahiro Hirano, Hideo Hosono

    APPLIED PHYSICS LETTERS   92 ( 20 )   202117   2008.5

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  • Thin film and bulk fabrication of room-temperature-stable electride C12A7 : e(-) utilizing reduced amorphous 12CaO center dot 7Al(2)O(3)(C12A7)

    Hideo Hosono, Sung Wang Kim, Masashi Miyakawa, Satoru Matsuishi, Toshio Kamiya

    JOURNAL OF NON-CRYSTALLINE SOLIDS   354 ( 19-25 )   2772 - 2776   2008.5

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  • Subgap states in transparent amorphous oxide semiconductor, In-Ga-Zn-O, observed by bulk sensitive x-ray photoelectron spectroscopy

    Kenji Nomura, Toshio Kamiya, Hiroshi Yanagi, Eiji Ikenaga, Ke Yang, Keisuke Kobayashi, Masahiro Hirano, Hideo Hosono

    APPLIED PHYSICS LETTERS   92 ( 20 )   202117   2008.5

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  • Pore-free 12CaO center dot 7Al(2)O(3) single-crystal growth by melt state control using the floating zone method

    Seok Gyu Yoon, Sung Wng Kim, Masahiro Hirano, Dae Ho Yoon, Hideo Hosono

    CRYSTAL GROWTH & DESIGN   8 ( 4 )   1271 - 1275   2008.4

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  • Pore-Free 12CaO·7Al2O3 single-crystal growth by melt state control using the floating zone method

    Seok Gyu Yoon, Sung Wng Kim, Masahiro Hirano, Dae Ho Yoon, Hideo Hosono

    Crystal Growth and Design   8 ( 4 )   1271 - 1275   2008.4

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    DOI: 10.1021/cg700996x

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  • Pore-free 12CaO center dot 7Al(2)O(3) single-crystal growth by melt state control using the floating zone method

    Seok Gyu Yoon, Sung Wng Kim, Masahiro Hirano, Dae Ho Yoon, Hideo Hosono

    CRYSTAL GROWTH & DESIGN   8 ( 4 )   1271 - 1275   2008.4

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  • Localized and delocalized electrons in room-temperature stable electride [Ca24Al28O64]4+(O2-) 2-x(e-)2x: Analysis of optical reflectance spectra

    Satoru Matsuishi, Sung Wng Kim, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    Journal of Physical Chemistry C   112 ( 12 )   4753 - 4760   2008.3

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    DOI: 10.1021/jp711631j

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  • Evidence for Bardeen-Cooper-Schrieffer-type superconducting behavior in the electride (CaO)12 (Al2 O3) 7: E- from heat capacity measurements

    Yoshimitsu Kohama, Sung Wng Kim, Takeo Tojo, Hitoshi Kawaji, Tooru Atake, Satoru Matsuishi, Hideo Hosono

    Physical Review B - Condensed Matter and Materials Physics   77 ( 9 )   092505   2008.3

  • Modeling of amorphous InGaZnO(4) thin film transistors and their subgap density of states

    Hsing-Hung Hsieh, Toshio Kamiya, Kenji Nomura, Hideo Hosono, Chung-Chih Wu

    APPLIED PHYSICS LETTERS   92 ( 13 )   133503   2008.3

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  • Iron-based layered superconductor La[O1-xFx]FeAs (x=0.05-0.12) with T-c=26 K

    Yoichi Kamihara, Takumi Watanabe, Masahiro Hirano, Hideo Hosono

    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY   130 ( 11 )   3296 - +   2008.3

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  • Optical and electrical properties of amorphous zinc tin oxide thin films examined for thin film transistor application

    Madambi K. Jayaraj, Kachirayil J. Saji, Kenji Nomura, Toshio Kamiya, Hideo Hosono

    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B   26 ( 2 )   495 - 501   2008.3

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  • Localized and delocalized electrons in room-temperature stable electride [Ca24Al28O64](4+)(O2-)(2-x)(e(-))(2x): Analysis of optical reflectance spectra

    Satoru Matsuishi, Sung Wng Kim, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    JOURNAL OF PHYSICAL CHEMISTRY C   112 ( 12 )   4753 - 4760   2008.3

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  • Trap densities in amorphous-InGaZnO(4) thin-film transistors

    Mutsumi Kimura, Takashi Nakanishi, Kenji Nomura, Toshio Kamiya, Hideo Hosono

    APPLIED PHYSICS LETTERS   92 ( 13 )   133512   2008.3

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  • Amorphous oxide channel TFTs

    Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo Hosono

    THIN SOLID FILMS   516 ( 7 )   1516 - 1522   2008.2

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  • Insulator-conductor transition in 12CaO center dot 7Al(2)O(3) films: On the stability of the crystal lattice under Ar(+) bombardment

    Peter V. Sushko, Alexander L. Shluger, Masahiro Hirano, Hideo Hosono

    THIN SOLID FILMS   516 ( 7 )   1350 - 1353   2008.2

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  • Diffusion and reactions of interstitial oxygen species in amorphous SiO2: A review

    Koichi Kajihara, Taisuke Miura, Hayato Kamioka, Akira Aiba, Motoko Urarnoto, Yukihiro Morinioto, Masahiro Hirano, Linards Skuja, Hideo Hosono

    JOURNAL OF NON-CRYSTALLINE SOLIDS   354 ( 2-9 )   224 - 232   2008.1

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  • Crystal structures, optoelectronic properties, and electronic structures of layered oxychalcogenides MCuOCh (M = Bi, La; Ch = S, Se, Te): Effects of electronic configurations of M3+ ions

    Hidenori Hiramatsu, Hiroshi Yanagi, Toshio Kamiya, Kazushige Ueda, Masahiro Hirano, Hideo Hosono

    CHEMISTRY OF MATERIALS   20 ( 1 )   326 - 334   2008.1

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  • Photoluminescence from epitaxial films of perovskite-type alkaline-earth stannates

    Kazushige Ueda, Tsuyoshi Maeda, Kensuke Nakayashiki, Katsuhiko Goto, Yutaka Nakachi, Hiroshi Takashima, Kenji Nomura, Koichi Kajihara, Hideo Hoson

    APPLIED PHYSICS EXPRESS   1 ( 1 )   015003   2008.1

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  • Itinerant ferromagnetism in the layered crystals LaCoOX (X = P,As)

    Hiroshi Yanagi, Ryuto Kawamura, Toshio Kamiya, Yoichi Kamihara, Masahiro Hirano, Tetsuya Nakamura, Hitoshi Osawa, Hideo Hosono

    Physical Review B   77 ( 22 )   224431   2008

  • 熱電コバルト酸化物のキャリア・エントロピーの光電子分光による直接観測

    石田行章, 藤森淳, 太田裕道, 細野秀雄

    固体物理   43   343 - 350   2008

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  • 酸化物の特徴を活かした機能開拓とデバイス

    細野秀雄

    応用物理学会結晶工学分科会第128回研究会テキスト   1 - 8   2008

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  • 大学の特許が実用化されない理由

    HIDEO HOSONO

    78   63 - 66   2008

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  • Properties of LaFeAsO/MgO(001) interfaces from ab initio calculations

    Peter V. Sushko, Hidenori Hiramatsu, Masahiro Hirano, Hideo Hosono

    J. Phys. Soc. Jpn.   77 (Suppl. C)   113 - 116   2008

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  • High-Pressure Studies on Superconducting Iron-Based LaFeAsO1-<italic>x</italic>F<italic>x</italic>, LaFePO and SrFe2As2

    Takahashi Hiroki, Okada Hironari, Igawa Kazumi, Arii Kazunobu, Kamihara Yoichi, Matsuishi Satoru, Hirano Masahiro, Hosono Hideo, Matsubayashi Kazuyuki, Uwatoko Yoshiya

    Journal of the Physical Society of Japan   77   78 - 83   2008

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    Language:English   Publisher:The Physical Society of Japan  

    Electrical resistivity and magnetic susceptibility measurements under high pressure were performed on iron-based superconductor LaFePO and LaFeAsO1-<italic>x</italic>F<italic>x</italic>system. A steep increase in superconducting transition temperature (<italic>T</italic>c) was observed for LaFePO and "optimum-doped" and "over-doped" LaFeAsO1-<italic>x</italic>F<italic>x</italic>. Pressure-induced superconductivity was confirmed in undoped LaFeAsO and SrFe2As2by electrical resistivity measurements under high pressure. X-ray diffraction measurements were also performed under high pressure up to 10 GPa for LaFePO and LaFeAsO1-<italic>x</italic>F<italic>x</italic>system, where the anisotropic decrease of the lattice constants was observed with applying pressure.

    DOI: 10.1143/JPSJS.77SC.78

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  • Layered Iron Pnictide Superconductors: Discovery and Current Status

    Hideo Hosono

    J. Phys. Soc. Jpn. Suppl. C   77   1 - 8   2008

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  • 「鉄を含む物質」で超伝導を実現!

    細野秀雄

    ニュートン   15 ( 5月号 )   2008

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  • 新系統の高温超伝導物質を発見

    細野秀雄

    化学   63   75   2008

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  • 水中の有機反応に使える安価で環境に優しい画期的なセメント還元剤を開発

    細野秀雄

    科研費NEWS   4   08   2008

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  • 新しい高温超電導体LaOFeAs

    細野秀雄

    パリティ   23   38 - 41   2008

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  • セメントが超伝導に

    平野 正浩, 宮川 仁, 金 聖雄, 細野 秀雄

    機能材料   ( 1月号 )   28   2008

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  • Insulator-metal Transition of an Alumina Cement Constituent, C12A7, Realized by Employing a Built-in Nanostructure : Fabrication of Highly Transparent Conductive Thin Films and Their Application to an Electron Injection Electrode in Organic Devices Utilizing the Low Work Function

    MIYAKAWA Masashi, KIM Ki-Beom, KAMIYA Toshio, HIRANO Masahiro, HOSONO Hideo

    Journal of the Surface Science Society of Japan   29 ( 1 )   2 - 9   2008

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  • フレキシブルディスプレイ用無機半導体の急展開-透明アモルファス酸化物半導体(TAOS)-、特集2フレキシブルディスプレイと電子ペーパー

    細野 秀雄

    月刊ディスプレイ   ( 2月号 )   59 - 63   2008

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  • 材料ユビキタス元素戦略:ありふれた元素の底力を引き出す

    細野秀雄

    化学と教育   56 ( 3 )   126 - 127   2008

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    Language:Japanese   Publisher:公益社団法人 日本化学会  

    DOI: 10.20665/kakyoshi.56.3_126

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  • Heavy hole doping and light-emitting device application of wide gap p-type semiconductor, LaCuOSe

    Function & materials   28 ( 3月号 )   34 - 41   2008

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  • 酸化物半導体の薄膜トランジスタへの応用

    野村研二, 神谷利夫, 太田裕道, 平野正浩, 細野秀雄

    機能材料   28 ( 3月号 )   42 - 53   2008

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  • Optical and carrier transport properties of cosputtered Zn-In-Sn-O films and their applications to TFTs

    Kachirayil J. Saji, Madambi K. Jayaraj, Kenji Nomura, Toshio Kamiya, Hideo Hosono

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY   155 ( 6 )   H390 - H395   2008

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  • ユビキタス元素戦略ー現代の錬金術を目指す

    細野秀雄

    化学と工業   61   28   2008

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  • シリガラス

    細野秀雄

    工業材料   56   60 - 61   2008

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  • Pressure effects on superconducting and structural properties for nickel-based superconductors LaNiXO (X = P and As)

    Hironari OKADA, Yuki TAKAHASHI, Kazumi IGAWA, Kazunobu ARII, Hiroki TAKAHASHI, Takumi WATANABE, Hiroshi YANAGI, Yoichi KAMIHARA, Toshio KAMIYA, Masahiro HIRANO, Hideo HOSONO, Satoshi NAKANO, Takumi KIKEGAWA

    J. Phys. Soc. Jpn. Suppl. C   77   119 - 120   2008

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  • Evidence for Bardeen-Cooper-Schrieffer-Type Superconducting Behavior in the Electride (CaO)_12_(Al_2_O_3_)_7_:e^-^ from Heat Capacity Measurements

    Yoshimitsu KOHAMA, Sung Wang KIM, Takeo TOJO, Hitoshi KAWAJI, Tooru ATAKE, Satoru MATSUISHI, Hideo HOSONO

    Phys. Rev. B   77 ( 9 )   092505   2008

  • Thin film and bulk fabrication of room-tenperature-stable electride C12A7:e- utilizing reduced amorphous 12CaO・7Al2O3(C12A7)

    Hideo Hosono, SungWng Kim, Masashi Miyakawa, Satoru Matsuishi, Toshio Kamiya

    J. Non-Cryst. Sol.   354 ( 19-25 )   2772 - 2776   2008

  • Electronic structure of oxygen deficient amorphous oxide semiconductor a-InGaZnO4-x: Optical analyses and first-principle calculations

    Toshio Kamiya, Kenji Nomura, Masahiro Hirano, Hideo Hosono

    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9   5 ( 9 )   3098 - +   2008

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  • Layered Iron Pnictide Superconductors: Discovery and Current Status

    Hideo Hosono

    J. Phys. Soc. Jpn. Suppl. C   77   1 - 8   2008

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  • Unusual Pseudogap Features Observed in Iron Oxypnictide Superconductors

    Yukiaki Ishida, Takahiro Shimojima, Kyoko Ishizaka, Takayuki Kiss, Mario Okawa, Tadashi Togashi, Shuntaro Watanabe, Xiaoyang Wang, Chuangtian Chen, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono, Shik Shin

    J. Phys. Soc. Jpn. Suppl. C   77   61 - 64   2008

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  • Doping Dependence of Pseudogap in LaFeAsO1-xFx

    T. Sato, K. Nakayama, Y. Sekiba, T. Arakane, K. Terashima, S. Souma, T. Takahashi, Y. Kamihara, M. Hirano, H. Hosono

    J. Phys. Soc. Jpn. Suppl. C   77   65 - 68   2008

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    We have performed systematic ultrahigh-resolution photoemission spectroscopy on the iron-based superconductor LaFeAsO1-<italic>x</italic>F<italic>x</italic>(<italic>x</italic>=0-14%) to elucidate the evolution of electronic states with doping. We found that the density of states (DOS) around the Fermi level of the superconducting sample is markedly smaller than that of the undoped sample in contrast to conventional phonon-mediated superconductors. We observed a pseudogap in the DOS above the superconducting transition temperature (<italic>T</italic>c) which opens/closes at a temperature (<italic>T</italic>*) well above <italic>T</italic>c. The energy scale of pseudogap and the <italic>T</italic>*value are gradually reduced upon fluorine substitution. The origin of pseudogap is discussed in terms of the partial nesting of Fermi surfaces due to the spin-density-wave formation or the short-range spin correlations.

    DOI: 10.1143/JPSJS.77SC.65

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  • Photoemission Study of the Electronic Structure of LaFeAsO1-xFx and LaFePO1-xFx

    Walid Malaeb, Teppei Yoshida, Takashi Kataoka, Atsushi Fujimori, Masato Kubota, Kanta Ono, Hidetomo Usui, Kazuhiko Kuroki, Ryotaro Arita, Hideo Aoki, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono

    J. Phys. Soc. Jpn. Suppl. C   77   69 - 71   2008

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  • Spin Ordering in LaFeAsO and Its Suppression in F-Doped Superconductors LaFeAsO1-xFx Probed by Mossbauer Spectroscopy

    S. Kitao, Y. Kobayashi, S. Higashitaniguchi, M. Kurokuzu, M. Saito, Y. Kamihara, M. Hirano, T. Mitsui, H. Hosono, M. Seto

    J. Phys. Soc. Jpn. Suppl. C   77   121 - 122   2008

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  • Plasticity of Fe-Oxypnictides Superconductor

    Yutaka Shinoda, Sung-Wng Kim, Fumihiro Wakai, Hideo Hosono

    J. Phys. Soc. Jpn. Suppl. C   77   125 - 126   2008

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  • Interface electronic structures of zin oxide and metals: First-principle study

    T. Kamiya, K. Tajima, K. Nomura, Hiroshi Yanagi, H. Hosono

    physica status solidi (a)   205   1929 - 1933   2008

  • 大学の特許が実用化されない理由

    HIDEO HOSONO

    78   63 - 66   2008

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  • Properties of LaFeAsO/MgO(001) interfaces from ab initio calculations

    Peter V. Sushko, Hidenori Hiramatsu, Masahiro Hirano, Hideo Hosono

    J. Phys. Soc. Jpn.   77 (Suppl. C)   113 - 116   2008

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  • High-pressure Studies on Superconducting iron-based LaFeAsO1-xFx , LaFePO and SrFe2As2

    Hiroki TAKAHASHI, Hironari OKADA, Kazumi IGAWA, Kazunobu ARII, Yoichi KAMIHARA, Satoru MATSUISHI, Masahiro HIRANO, Hideo HOSONO, Kazuyuki MATSUBAYASHI, Yoshiya UWATOKO

    J. Phys. Soc. Jpn. Suppl. C   77   78 - 83   2008

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  • Optical and carrier transport properties of cosputtered Zn-In-Sn-O films and their applications to TFTs

    Kachirayil J. Saji, Madambi K. Jayaraj, Kenji Nomura, Toshio Kamiya, Hideo Hosono

    JOURNAL OF THE ELECTROCHEMICAL SOCIETY   155 ( 6 )   H390 - H395   2008

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  • 新系統の高温超伝導物質を発見

    細野秀雄

    OHM   23 ( 7月号 )   8 - 9   2008

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  • Evidence for Bardeen-Cooper-Schrieffer-type superconducting behavior in the electride 12Cao・7Al2O3:e竏驤€ from heat capacity measurements

    Yoshimitsu Kohama, Sung Wng Kim, Takeo Tojo, Hitoshi Kawaji, Tooru Atake, Satoru Matsuishi, Hideo Hosono

    Physical Review B   77 ( 9 )   092505   2008

  • Evidence for Bardeen-Cooper-Schrieffer-Type Superconducting Behavior in the Electride (CaO)_12_(Al_2_O_3_)_7_:e^-^ from Heat Capacity Measurements

    Yoshimitsu KOHAMA, Sung Wang KIM, Takeo TOJO, Hitoshi KAWAJI, Tooru ATAKE, Satoru MATSUISHI, Hideo HOSONO

    Phys. Rev. B   77 ( 9 )   092505   2008

  • Photofield-effect in amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors

    Tze-Ching Fung, Chiao-Shun Chuang, Kenji Nomura, Han-Ping David Shieh, Hideo Hosono, Jerzy Kanicki

    Journal of Information Display   9 ( 4 )   21 - 29   2008

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  • Spin Ordering in LaFeAsO and Its Suppression in F-Doped Superconductors LaFeAsO1-xFx Probed by Mossbauer Spectroscopy

    S. Kitao, Y. Kobayashi, S. Higashitaniguchi, M. Kurokuzu, M. Saito, Y. Kamihara, M. Hirano, T. Mitsui, H. Hosono, M. Seto

    J. Phys. Soc. Jpn. Suppl. C   77   121 - 122   2008

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  • Plasticity of Fe-Oxypnictides Superconductor

    Yutaka Shinoda, Sung-Wng Kim, Fumihiro Wakai, Hideo Hosono

    J. Phys. Soc. Jpn. Suppl. C   77   125 - 126   2008

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  • Superconducting gap and pseudogap structure in LaFeAsO1-xF x probed by STM/STS

    Koichi Ichimura, Junya Ishioka, Toru Kurosawa, Katsuhiko Inagaki, Migaku Oda, Satoshi Tanda, Hiroki Takahashi, Hironari Okada, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono

    Journal of the Physical Society of Japan   77 ( C )   151 - 152   2008

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    DOI: 10.1143/JPSJS.77SC.151

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  • 酸化物半導体を利用した透明トランジスタ

    細野秀雄

    高分子   56   835 - 839   2008

  • 高温超電導物質 鉄系の薄膜生成に成功

    細野秀雄

    セラミックス   43   961   2008

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  • 「元素戦略の目指すもの」

    細野秀雄

    表面科学   29   577   2008

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  • Pressure effects on superconducting and structural properties for nickel-based superconductors LaNiXO (X = P and As)

    Hironari OKADA, Yuki TAKAHASHI, Kazumi IGAWA, Kazunobu ARII, Hiroki TAKAHASHI, Takumi WATANABE, Hiroshi YANAGI, Yoichi KAMIHARA, Toshio KAMIYA, Masahiro HIRANO, Hideo HOSONO, Satoshi NAKANO, Takumi KIKEGAWA

    J. Phys. Soc. Jpn. Suppl. C   77   119 - 120   2008

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  • CZ法による12CaO・7Al2O3(C12A7)単結晶の育成

    蔵重和央, 上田俊輔, 平野正浩, 細野秀雄

    日立化成テクニカルレポート   50   11 - 16   2008

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  • Unusual Pseudogap Features Observed in Iron Oxypnictide Superconductors

    Yukiaki Ishida, Takahiro Shimojima, Kyoko Ishizaka, Takayuki Kiss, Mario Okawa, Tadashi Togashi, Shuntaro Watanabe, Xiaoyang Wang, Chuangtian Chen, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono, Shik Shin

    J. Phys. Soc. Jpn. Suppl. C   77   61 - 64   2008

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  • Doping Dependence of Pseudogap in LaFeAsO1-<italic>x</italic>F<italic>x</italic>

    Sato T., Nakayama K., Sekiba Y., Arakane T., Terashima K., Souma S., Takahashi T., Kamihara Y., Hirano M., Hosono H.

    Journal of the Physical Society of Japan   77   65 - 68   2008

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    We have performed systematic ultrahigh-resolution photoemission spectroscopy on the iron-based superconductor LaFeAsO1-<italic>x</italic>F<italic>x</italic>(<italic>x</italic>=0-14%) to elucidate the evolution of electronic states with doping. We found that the density of states (DOS) around the Fermi level of the superconducting sample is markedly smaller than that of the undoped sample in contrast to conventional phonon-mediated superconductors. We observed a pseudogap in the DOS above the superconducting transition temperature (<italic>T</italic>c) which opens/closes at a temperature (<italic>T</italic>*) well above <italic>T</italic>c. The energy scale of pseudogap and the <italic>T</italic>*value are gradually reduced upon fluorine substitution. The origin of pseudogap is discussed in terms of the partial nesting of Fermi surfaces due to the spin-density-wave formation or the short-range spin correlations.

    DOI: 10.1143/JPSJS.77SC.65

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  • Photoemission study of the electronic structure of LaFeAsO <inf>1-x</inf>F<inf>x</inf> and LaFePO<inf>1-x</inf>F<inf>x</inf>

    Walid Malaeb, Teppei Yoshida, Takashi Kataoka, Atsushi Fujimori, Masato Kubota, Kanta Ono, Hidetomo Usui, Kazuhiko Kuroki, Ryotaro Arita, Hideo Aoki, Yoichi Kamihara, Masahiro Hirano, Hideo Hosono

    Journal of the Physical Society of Japan   77 ( SUPPL. C )   69 - 71   2008

  • Optoelectronic properties and electronic structure of YCuOSe

    Kazushige Ueda, Kouhei Takafuji, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono, Hidenori Hiramatsu, Masahiro Hirano, Noriaki Hamada

    JOURNAL OF APPLIED PHYSICS   102 ( 11 )   113714   2007.12

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  • Vibrational dynamics and oxygen diffusion in a nanoporous oxide ion conductor 12CaO·7Al2O3 studied by18O labeling and micro-Raman spectroscopy

    Koichi Kajihara, Satoru Matsuishi, Katsuro Hayashi, Masahiro Hirano, Hideo Hosono

    Journal of Physical Chemistry C   111 ( 40 )   14855 - 14861   2007.10

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    DOI: 10.1021/jp074248n

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  • Fabrication of room temperature-stable 12CaO center dot 7Al(2)O(3) electride: a review

    Sung-Wng Kim, Satoru Matsuishi, Masashi Miyakawa, Katsuro Hayashi, Masahiro Hirano, Hideo Hosono

    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS   18   S5 - S14   2007.10

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  • Fabrication of room temperature-stable 12CaO · 7Al 2 O 3 electride: A review

    Sung-Wng Kim, Satoru Matsuishi, Masashi Miyakawa, Katsuro Hayashi, Masahiro Hirano, Hideo Hosono

    Journal of Materials Science: Materials in Electronics   18 ( 1 )   5 - 14   2007.10

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  • Vibrational dynamics and oxygen diffusion in a nanoporous oxide ion conductor 12CaO center dot 7Al(2)O(3) studied by O-18 labeling and micro-Raman spectroscopy

    Koichi Kajihara, Satoru Matsuishi, Katsuro Hayashi, Masahiro Hirano, Hideo Hosono

    JOURNAL OF PHYSICAL CHEMISTRY C   111 ( 40 )   14855 - 14861   2007.10

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  • Fabrication of room temperature-stable 12CaO center dot 7Al(2)O(3) electride: a review

    Sung-Wng Kim, Satoru Matsuishi, Masashi Miyakawa, Katsuro Hayashi, Masahiro Hirano, Hideo Hosono

    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS   18   S5 - S14   2007.10

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  • Fabrication of room temperature-stable 12CaO · 7Al 2 O 3 electride: A review

    Sung-Wng Kim, Satoru Matsuishi, Masashi Miyakawa, Katsuro Hayashi, Masahiro Hirano, Hideo Hosono

    Journal of Materials Science: Materials in Electronics   18 ( 1 )   5 - 14   2007.10

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  • Fabrication of room temperature-stable 12CaO center dot 7Al(2)O(3) electride: a review

    Sung-Wng Kim, Satoru Matsuishi, Masashi Miyakawa, Katsuro Hayashi, Masahiro Hirano, Hideo Hosono

    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS   18   S5 - S14   2007.10

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  • Detection of infrared silent proton in hydrogen-reduced tungsten phosphate glasses by thermal desorption

    Hiromasa Tawarayama, Shouichi Sugata, Hiroyuki Inoue, Hideo Hosono, Hiroshi Kawazoe

    CHEMISTRY OF MATERIALS   19 ( 18 )   4385 - 4386   2007.9

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  • Novel room temperature stable electride 12SrO center dot 7Al(2)O(3) thin films: Fabrication, optical and electron transport properties

    Masashi Miyakawa, Naoto Ueda, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   115 ( 1345 )   567 - 570   2007.9

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  • Nickel-based oxyphosphide superconductor with a layered crystal structure, LaNiOP

    Takumi Watanabe, Hiroshi Yanagi, Toshio Kamiya, Yoichi Kamihara, Hidenori Hiramatsu, Masahiro Hirano, Hideo Hosono

    INORGANIC CHEMISTRY   46 ( 19 )   7719 - 7721   2007.9

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  • Diffusion of nitrogen molecules in amorphous SiO2

    Koichi Kajihara, Masahiro Hirano, Yasuyuki Takimoto, Linards Skuja, Hideo Hosono

    APPLIED PHYSICS LETTERS   91 ( 7 )   071904-071904-3   2007.8

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  • Heavy hole doping of epitaxial thin films of a wide gap p-type semiconductor, LaCuOSe, and analysis of the effective mass

    Hidenori Hiramatsu, Kazushige Ueda, Hiromichi Ohta, Masahiro Hirano, Maiko Kikuchi, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono

    APPLIED PHYSICS LETTERS   91 ( 1 )   012104   2007.7

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  • Anion incorporation-induced cage deformation in 12CaO center dot 7Al(2)O(3) crystal

    Takatoshi Nomura, Katsuro Hayashi, Yoshiki Kubota, Toshio Kamiya, Masahiro Hirano, Masaki Takata, Hideo Hosono

    CHEMISTRY LETTERS   36 ( 7 )   902 - 903   2007.7

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  • Photoelectron spectroscopic study of C12A7:e- and Alq 3 interface: The formation of a low electron-injection barrier

    Ki-Beom Kim, Maiko Kikuchi, Masashi Miyakawa, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    Journal of Physical Chemistry C   111 ( 24 )   8403 - 8406   2007.6

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    DOI: 10.1021/jp072635r

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  • Photoelectron spectroscopic study of C12A7 : e(-) and Alq(3) interface: The formation of a low electron-injection barrier

    Ki-Beom Kim, Maiko Kikuchi, Masashi Miyakawa, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    JOURNAL OF PHYSICAL CHEMISTRY C   111 ( 24 )   8403 - 8406   2007.6

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  • Combinatorial approach to thin-film transistors using multicomponent semiconductor channels: An application to amorphous oxide semiconductors in In-Ga-Zn-O system

    Tatsuya Iwasaki, Naho Itagaki, Tohru Den, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo Hosono

    APPLIED PHYSICS LETTERS   90 ( 24 )   242114   2007.6

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  • Recent progress in transparent oxide semiconductors: Materials and device application

    Hideo Hosono

    Thin Solid Films   515 ( 15 )   6000 - 6014   2007.5

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  • Functionalities of a nanoporous crystal 12CaO center dot 7Al(2)O(3) originating from the incorporation of active anions

    Katsuro Hayashi, Masahiro Hirano, Hideo Hosono

    BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN   80 ( 5 )   872 - 884   2007.5

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  • Metallic state in a lime-alumina compound with nanoporous structure

    Sung Wng Kim, Satoru Matsuishi, Takatoshi Nomura, Yoshiki Kubota, Masaki Takata, Katsuro Hayashi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    NANO LETTERS   7 ( 5 )   1138 - 1143   2007.5

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  • Recent progress in transparent oxide semiconductors: Materials and device application

    Hideo Hosono

    THIN SOLID FILMS   515 ( 15 )   6000 - 6014   2007.5

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  • Metallic state in a lime-alumina compound with nanoporous structure

    Sung Wng Kim, Satoru Matsuishi, Takatoshi Nomura, Yoshiki Kubota, Masaki Takata, Katsuro Hayashi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    Nano Letters   7 ( 5 )   1138 - 1143   2007.5

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  • Epitaxial film growth, optical, electrical, and magnetic properties of layered oxide In3FeTi2O10

    Youichi Ogo, Hiroshi Yanagi, Toshio Kamiya, Kenji Nomura, Masahiro Hirano, Hideo Hosono

    JOURNAL OF APPLIED PHYSICS   101 ( 10 )   103714   2007.5

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  • High electron doping to a wide band gap semiconductor 12CaO center dot 7Al(2)O(3) thin film

    Masashi Miyakawa, Masahiro Hirano, Toshio Kamiya, Hideo Hosono

    APPLIED PHYSICS LETTERS   90 ( 18 )   182105   2007.4

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  • Fluorine laser-induced silicon hydride Si-H groups in silica

    Linards Skuja, Koichi Kajihara, Masahiro Hirano, Hideo Hosono

    JOURNAL OF NON-CRYSTALLINE SOLIDS   353 ( 5-7 )   526 - 529   2007.4

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  • Fast thin-film transistor circuits based on amorphous oxide semiconductor

    Masato Ofuji, Katsumi Abe, Hisae Shimizu, Nobuyuki Kaji, Ryo Hayashi, Masafumi Sano, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo Hosono

    IEEE ELECTRON DEVICE LETTERS   28 ( 4 )   273 - 275   2007.4

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  • Reactivity of SiCl and SiF groups in SiO2 glass with mobile interstitial O-2 and H2O molecules

    Koichi Kajihara, Masahiro Hirano, Linards Skuja, Hideo Hosono

    JOURNAL OF NON-CRYSTALLINE SOLIDS   353 ( 5-7 )   514 - 517   2007.4

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  • Why is the amorphous oxide semiconductors paid to attention for a flexible device?

    Materials integration   20 ( 3 )   40 - 46   2007.3

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  • Nanoporous crystal 12CaO center dot 7Al(2)O(3): A playground for studies of ultraviolet optical absorption of negative ions

    Katsuro Hayashi, Peter V. Sushko, David Munoz Ramo, Alexander L. Shluger, Satoshi Watauchi, Isao Tanaka, Satoru Matsuishi, Masahiro Hirano, Hideo Hosono

    JOURNAL OF PHYSICAL CHEMISTRY B   111 ( 8 )   1946 - 1956   2007.3

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  • Active anion manipulation for emergence of active functions in the nanoporous crystal 12CaO center dot 7Al(2)O(3): a case study of abundant element strategy

    Hideo Hosono, Katsuro Hayashi, Masahiro Hirano

    JOURNAL OF MATERIALS SCIENCE   42 ( 6 )   1872 - 1883   2007.3

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  • Nanoporous crystal 12CaO center dot 7Al(2)O(3): A playground for studies of ultraviolet optical absorption of negative ions

    Katsuro Hayashi, Peter V. Sushko, David Munoz Ramo, Alexander L. Shluger, Satoshi Watauchi, Isao Tanaka, Satoru Matsuishi, Masahiro Hirano, Hideo Hosono

    JOURNAL OF PHYSICAL CHEMISTRY B   111 ( 8 )   1946 - 1956   2007.3

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  • Active anion manipulation for emergence of active functions in the nanoporous crystal 12CaO center dot 7Al(2)O(3): a case study of abundant element strategy

    Hideo Hosono, Katsuro Hayashi, Masahiro Hirano

    JOURNAL OF MATERIALS SCIENCE   42 ( 6 )   1872 - 1883   2007.3

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  • Giant thermoelectric Seebeck coefficient of two-dimensional electron gas in SrTiO3

    Hiromichi Ohta, Sungwng Kim, Yorika Mune, Teruyasu Mizoguchi, Kenji Nomura, Shingo Ohta, Takashi Nomura, Yuki Nakanishi, Yuichi Ikuhara, Masahiro Hirano, Hideo Hosono, Kunihito Koumoto

    NATURE MATERIALS   6 ( 2 )   129 - 134   2007.2

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  • Formation of intrinsic point defects in fluorine-doped synthetic SiO2 glass by Co-60 gamma-ray irradiation

    Koichi Kajihara, Masahiro Hirano, Linards Skuja, Hideo Hosono

    CHEMISTRY LETTERS   36 ( 2 )   266 - 267   2007.2

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  • Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment and ab initio calculations

    Kenji Nomura, Toshio Kamiya, Hiromichi Ohta, Tomoya Uruga, Masahiro Hirano, Hideo Hosono

    PHYSICAL REVIEW B   75 ( 3 )   035212   2007.1

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  • Structural and photo-induced properties of EU2+-doped Ca2ZnSi2O7: A red phosphor for white light generation by blue ray excitation

    Hayato Kamioka, Takashi Yamaguchi, Masahiro Hirano, Toshio Kamiya, Hideo Hosono

    JOURNAL OF LUMINESCENCE   122 ( 122-123 )   339 - 341   2007.1

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  • Phosphorus co-doping effect on photoluminescence in Ce3+-doped SiO2 glasses: The formation of unique ligand field by P-co-doping

    Akira Saitoh, Shuhei Murata, Satoru Matsuishia, Masanori Oto, Taisuke Miura, Masahiro Hirano, Hideo Hosono

    JOURNAL OF LUMINESCENCE   122 ( 122-123 )   355 - 358   2007.1

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  • Superconductivity in an Inorganic Electride 12CaO7Al_2_O_3_:e-;

    M. Miyakawa, S.W. Kim, M. Hirano, Y. Kohama, H. Kawaji, T. Atake, H. Ikegami, K. Kono, H. Hosono

    J. Am. Chem. Soc.   129 ( 23 )   7270 - 7271   2007

  • セメントが金属に変わる

    細野 秀雄

    ニュートン   13   2007

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  • 研究室訪問「透明酸化物機能材料のフロンティア開拓」

    細野秀雄

    蔵前ジャーナル   1004   39 - 44   2007

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  • : Electron emission characteristics of hydrogen doped 12CaO7Al_2_O_3_ electride for PDP

    S. Webster, M.Ono, S. Ito, H. Kajiyama, T shinoda, H. Hosono

    The 14th International Display Workshop (IDW'07)   795 - 798   2007

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  • 平成18年度東京工業大学挑戦的研究賞「趣味」の研究と「使える材料」の研究のはざま: わたしの挑戦的研究; 東工大クロニクル(Dec. 2007),

    神谷 利夫

    東工大クロニクル   ( 427 )   14 - 17   2007

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  • 電気を通すセラミックスで材料の常識を一変させる

    細野 秀雄

    日経BPムック「東京工業大学」   84 - 87   2007

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  • ナノテクと素材科学(セメント素材の超電導化) 大学院・大学・通信教育で学べることがわかる

    細野 秀雄

    日経キャリアマガジン   54   2007

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  • Superconductivity in an Inorganic Electride 12CaO・7Al_2_O_3_:e^-^

    Masashi MIYAKAWA, Sung Wng KIM, Masahiro HIRANO, Yoshimitsu KOHAMA, Hitoshi KAWAJI, Tooru ATAKE, Hiroki IKEGAMI, Kimitoshi KONO, Hideo HOSONO

    J. Am. Chem. Soc.   129 ( 23 )   7270 - 7271   2007

  • Superconductivity in an Inorganic Electride 12CaO窶「7Al2O3:e-

    Masashi Miyakawa, Sung Wng Kim, Masahiro Hirano, Yoshimitsu Kohama, Hitoshi Kawaji, Tooru Atake, Hiroki Ikegami, Kimitoshi Kono, Hideo Hosono

    Journal of the American Chemical Society   129 ( 23 )   7270 - 7271   2007

  • セメントを金属に変身させる

    細野秀雄

    マテリアルステージ   ( 8 )   113 - 115   2007

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  • O-イオンを高濃度に包接するセラミックス12CaO7Al_2_O_3_(C12A7)

    細野秀雄, 林克郎

    触媒   ( 49 )   314 - 320   2007

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  • Ultraviolet absorption of hydrogen related species in glassy silica

    L.Skuja, K. Kajihara, M. Hirano, H. Hosono

    Physics and Chemistry of Glasses   ( 48 )   103 - 106   2007

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  • 材料ユビキタス元素戦略の行方

    細野 秀雄

    セラミック データ ブック   35   67 - 70   2007

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  • Work function of a room- temperature stable electride [Ca24Al28O64]4+(e-)4: a low intrinsic value (2.4 eV) and bias-induced negative work function

    Yoshitake Toda, Hiroshi Yanagi, Eiji Ikenaga, Jung Jin Kim, Masaaki Kobata, Sigenori Ueda, Toshio Kamiya, Masahiro Hirano, Keisuke Kobayashi, Hideo Hosono

    Adv. Mater.   19 ( 21 )   3564 - 3569   2007

  • 元素への先入観を壊し化学の新しい扉を開く

    玉尾皓平, 細野秀雄

    化学   62   12 - 16   2007

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  • セメントを金属に変えることに成功

    細野 秀雄

    セラミックス   42   619   2007

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  • なぜアモルファス酸化物がフレキシブルデバイス用半導体として注目されているのか; Materials Integration

    神谷利夫, 野村研二, 細野秀雄

    ティー・アイ・シィー   20 ( 3月 )   40 - 46   2007

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  • Stable Inorganic Electride C12A7:e^- : Electronic Properties and Structure

    MATSUISHI Satoru, HOSONO Hideo

    X-RAYS   49 ( 3 )   171 - 178   2007

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    Language:Japanese   Publisher:The Crystallographic Society of Japan  

    Transparent insulating oxide 12CaO·7Al2O3 (C12A7) is converted into electronic conductor by replacing the oxygen ions in the crystallographic cages with electrons. At the low electron concentration (Ne) <-1020 cm-3, C12A7 exhibits semiconductive properties due to hopping of localized electron. With increase of Ne, it becomes metallic state at a critical Ne-1×1021 cm-3. Fully oxygen-replaced C12A7 (C12A7: e-) may be regarded as a room-temperature-stable electride in which electrons serve as anions. Small work function of 2.4 eV comparable to that in metal potassium is a characteristic of C 12A7: e- and makes it a promising candidate for electron emitting source.

    DOI: 10.5940/jcrsj.49.171

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  • 透明材料のフェムト秒レーザーナノ加工による機能性付与と加工メカニズム

    河村賢一, 平野正浩, 神谷利夫, 細野秀雄

    光アライアンス   ( 18 )   38   2007

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  • : Electron emission characteristics of hydrogen doped 12CaO7Al_2_O_3_ electride for PDP

    S. Webster, M.Ono, S. Ito, H. Kajiyama, T shinoda, H. Hosono

    The 14th International Display Workshop (IDW'07)   795 - 798   2007

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  • Development of latent images due to transient free carrier electrons by femtosecond laser pulses and its application to grating shape trimming

    Ken-ichi Kawamura, Takukazu, Otsuka Masahiro Hirano, Toshio Kamiya, Hideo Hosono

    Appl. Phys. Lett.   ( 90 )   011107   2007

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  • Transparent Conducting Oxides for Photovoltaics

    E.Fortunato, D.Ginley, H.Hosono, D.Paine

    MRS Bull   ( 32 )   242 - 247   2007

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  • 透明導電性酸化物の現状と将来展望

    細野秀雄

    セラミックス   ( 42 )   2 - 6   2007

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  • 酸化物半導体を利用した透明薄膜トランジスタ

    細野秀雄, 神谷利夫

    電子情報通信学会誌   ( 90 )   232 - 238   2007

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  • Work function of a room- temperature stable electride [Ca24Al28O64]4+(e-)4: a low intrinsic value (2.4 eV) and bias-induced negative work function

    Yoshitake Toda, Hiroshi Yanagi, Eiji Ikenaga, Jung Jin Kim, Masaaki Kobata, Sigenori Ueda, Toshio Kamiya, Masahiro Hirano, Keisuke Kobayashi, Hideo Hosono

    Adv. Mater.   19 ( 21 )   3564 - 3569   2007

  • Fabrication of Room Temperature-Stable 12CaO・7Al2O3 Electride: A Review

    Sung-Wng Kim, Satoru Matsuishi, Katsuro Hayashi, Masahiro Hirano, Hideo Hosono

    J. Mater. Sci. Electron.   18   S5S14   2007

  • Ultraviolet absorption of hydrogen related species in glassy silica

    L.Skuja, K. Kajihara, M. Hirano, H. Hosono

    Physics and Chemistry of Glasses   ( 48 )   103 - 106   2007

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  • Development of latent images due to transient free carrier electrons by femtosecond laser pulses and its application to grating shape trimming

    Ken-ichi Kawamura, Takukazu, Otsuka Masahiro Hirano, Toshio Kamiya, Hideo Hosono

    Appl. Phys. Lett.   ( 90 )   011107   2007

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  • Transparent Conducting Oxides for Photovoltaics

    E.Fortunato, D.Ginley, H.Hosono, D.Paine

    MRS Bull   ( 32 )   242 - 247   2007

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  • Self-adjusted, three-dimensional lattice-matched buffer layer for growing ZnO epitaxial film: Homologous series layered oxide, InGaO3(ZnO)(5)

    Toshio Kamiya, Yujiro Takeda, Kenji Nomura, Hiromichi Ohta, Hiroshi Yanagi, Masahiro Hirano, Hideo Hosono

    CRYSTAL GROWTH & DESIGN   6 ( 11 )   2451 - 2456   2006.11

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  • Electron carrier generation in a refractory oxide 12CaO (center dot) 7Al(2)O(3) by heating in reducing atmosphere: Conversion from an insulator to a persistent conductor

    Sung-Wng Kim, Katsuro Hayashi, Masahiro Hirano, Hideo Hosono, Isao Tanaka

    JOURNAL OF THE AMERICAN CERAMIC SOCIETY   89 ( 10 )   3294 - 3298   2006.10

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  • Valence band structure of BaCuSF and BaCuSeF

    Hiroshi Yanagi, Janet Tate, Sangmoon Park, Cheol-Hee Park, Douglas A. Keszler, Masahiro Hirano, Hideo Hosono

    JOURNAL OF APPLIED PHYSICS   100 ( 8 )   083705   2006.10

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  • Electron carrier generation in a refractory oxide 12CaO (center dot) 7Al(2)O(3) by heating in reducing atmosphere: Conversion from an insulator to a persistent conductor

    Sung-Wng Kim, Katsuro Hayashi, Masahiro Hirano, Hideo Hosono, Isao Tanaka

    JOURNAL OF THE AMERICAN CERAMIC SOCIETY   89 ( 10 )   3294 - 3298   2006.10

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  • Potential profiling of the nanometer-scale charge-depletion layer in n-ZnO/p-NiO junction using photoemission spectroscopy

    Yukiaki Ishida, Atsushi Fujimori, Hiromichi Ohta, Masahiro Hirano, Hideo Hosono

    APPLIED PHYSICS LETTERS   89 ( 15 )   153502-1-3   2006.10

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  • Electron carrier generation in a refractory oxide 12CaO·7Al 2O3 by heating in reducing atmosphere: Conversion from an insulator to a persistent conductor

    Sung-Wng Kim, Katsuro Hayashi, Masahiro Hirano, Hideo Hosono, Isao Tanaka

    Journal of the American Ceramic Society   89 ( 10 )   3294 - 3298   2006.10

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  • Large conductivity enhancement in polycrystalline 12CaO center dot 7Al(2)O(3) thin films induced by extrusion of clathrated O2- ions by hot Au+ implantation and ultraviolet light illumination

    M. Miyakawa, M. Hirano, T. Kamiya, H. Hosono

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   250   155 - 158   2006.9

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  • In situ observation of the formation, diffusion, and reactions of hydrogenous species in F-2-laser-irradiated SiO2 glass using a pump-and-probe technique

    Koichi Kajihara, Linards Skuja, Masahiro Hirano, Hideo Hosono

    PHYSICAL REVIEW B   74 ( 9 )   094202   2006.9

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  • Photoluminescence of Au- formed in 12CaO center dot 7Al(2)O(3) single crystal by Au+-implantation

    A. Miyakawa, H. Kamioka, A. Hirano, T. Kamiya, H. Hosono

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   250   368 - 371   2006.9

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  • Large conductivity enhancement in polycrystalline 12CaO center dot 7Al(2)O(3) thin films induced by extrusion of clathrated O2- ions by hot Au+ implantation and ultraviolet light illumination

    M. Miyakawa, M. Hirano, T. Kamiya, H. Hosono

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   250   155 - 158   2006.9

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  • Photoluminescence of Au- formed in 12CaO center dot 7Al(2)O(3) single crystal by Au+-implantation

    A. Miyakawa, H. Kamioka, A. Hirano, T. Kamiya, H. Hosono

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   250   368 - 371   2006.9

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  • High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

    Hisato Yabuta, Masafumi Sano, Katsumi Abe, Toshiaki Aiba, Tohru Den, Hideya Kumomi, Kenji Nomura, Toshio Kamiya, Hideo Hosono

    APPLIED PHYSICS LETTERS   89 ( 11 )   112123   2006.9

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  • Iron-based layered superconductor: LaOFeP

    Yoichi Kamihara, Hidenori Hiramatsu, Masahiro Hirano, Ryuto Kawamura, Hiroshi Yanagi, Toshio Kamiya, Hideo Hosono

    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY   128 ( 31 )   10012 - 10013   2006.8

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  • Magnetic and carrier transport properties of Mn-doped p-type semiconductor LaCuOSe: An investigation of the origin of ferromagnetism

    Hiroshi Yanagi, Shuichi Ohno, Toshio Kamiya, Hidenori Hiramatsu, Masahiro Hirano, Hideo Hosono

    JOURNAL OF APPLIED PHYSICS   100 ( 3 )   033717   2006.8

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  • Modification of vacuum-ultraviolet absorption of SiOH groups in SiO2 glass with temperature, F-2 laser irradiation, and H-D isotope exchange

    Koichi Kajihara, Masahiro Hirano, Linards Skuja, Hideo Hosono

    JOURNAL OF NON-CRYSTALLINE SOLIDS   352 ( 23-25 )   2307 - 2310   2006.7

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  • Electron field emission from TiO2 nanotube arrays synthesized by hydrothermal reaction

    Masahiro Miyauchi, Hiromasa Tokudome, Yoshitake Toda, Toshio Kamiya, Hideo Hosono

    APPLIED PHYSICS LETTERS   89 ( 4 )   043114   2006.7

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  • Czochralski growth of 12CaO, 7Al(2)O(3) crystals

    K Kurashige, Y Toda, S Matstuishi, K Hayashi, M Hirano, H Hosono

    CRYSTAL GROWTH & DESIGN   6 ( 7 )   1602 - 1605   2006.7

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  • Electron field emission from TiO2 nanotube arrays synthesized by hydrothermal reaction

    Masahiro Miyauchi, Hiromasa Tokudome, Yoshitake Toda, Toshio Kamiya, Hideo Hosono

    APPLIED PHYSICS LETTERS   89 ( 4 )   043114-1 - 3   2006.7

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  • Surface modification of glass substrates for oxide heteroepitaxy: Pasteable three-dimensionally oriented layered oxide thin films

    Hiromichi Ohta, Atsushi Mizutani, Kenji Sugiura, Masahiro Hirano, Hideo Hosono, Kunihito Koumoto

    ADVANCED MATERIALS   18 ( 13 )   1649 - +   2006.7

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  • Femtosecond-laser-encoded distributed-feedback color center laser in lithium fluoride single crystal

    Ken-ich Kawamura, Masahiro Hirano, Toshio Kamiya, Heido Hosono

    JOURNAL OF NON-CRYSTALLINE SOLIDS   352 ( 23-25 )   2347 - 2350   2006.7

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  • Origin of diameter-dependent growth direction of silicon nanowires

    C. X. Wang, Masahiro Hirano, Hideo Hosono

    NANO LETTERS   6 ( 7 )   1552 - 1555   2006.7

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  • High electrical conductivity of layered cobalt oxide Ca3Co4O9 epitaxial films grown by topotactic ion-exchange method

    Kenji Sugiura, Hiromichi Ohta, Kenji Nomura, Masahiro Hirano, Hideo Hosono, Kunihito Koumoto

    APPLIED PHYSICS LETTERS   89 ( 3 )   032111   2006.7

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  • Czochralski growth of 12CaO, 7Al(2)O(3) crystals

    K Kurashige, Y Toda, S Matstuishi, K Hayashi, M Hirano, H Hosono

    CRYSTAL GROWTH & DESIGN   6 ( 7 )   1602 - 1605   2006.7

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  • An increased F-2-laser damage in 'wet' silica glass due to atomic hydrogen: A new hydrogen-related E'-center

    L. Skuja, K. Kajihara, M. Hirano, A. Saitoh, H. Hosono

    JOURNAL OF NON-CRYSTALLINE SOLIDS   352 ( 23-25 )   2297 - 2302   2006.7

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  • Vacuum-ultraviolet absorption of interstitial O-2 and H2O molecules in SiO2 glass

    Koichi Kajihara, Masahiro Hirano, Linards Skuja, Hideo Hosono

    JOURNAL OF NON-CRYSTALLINE SOLIDS   352 ( 23-25 )   2303 - 2306   2006.7

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  • Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

    Hideo Hosono

    Journal of Non-Crystalline Solids   352 ( 9-20 )   851 - 858   2006.6

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  • Coloration and decoloration of tungsten phosphate glasses by heat treatments at the temperature far below T-g under a controlled ambient

    H Tawarayama, F Utsuno, H Inoue, H Hosono, H Kawazoe

    CHEMISTRY OF MATERIALS   18 ( 12 )   2810 - 2816   2006.6

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  • Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application

    Hideo Hosono

    JOURNAL OF NON-CRYSTALLINE SOLIDS   352 ( 9-20 )   851 - 858   2006.6

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  • Synthesis, structure and physical properties of layered semiconductors MCuFCh (M = Sr, Eu, Ch = S, Se)

    Eiji Motomitsu, Hiroshi Yanagi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    JOURNAL OF SOLID STATE CHEMISTRY   179 ( 6 )   1668 - 1673   2006.6

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  • Interstitial OH radicals in F-2-laser-irradiated bulk amorphous SiO2

    Koichi Kajihara, Masahiro Hirano, Linards Skuja, Hideo Hosono

    JOURNAL OF PHYSICAL CHEMISTRY B   110 ( 21 )   10224 - 10227   2006.6

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  • Amorphous oxide semiconductors for high-performance flexible thin-film transistors

    K Nomura, A Takagi, T Kamiya, H Ohta, M Hirano, H Hosono

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   45 ( 5B )   4303 - 4308   2006.5

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  • Disorder of O2- ion and incorporation of O- and O<inf>2</inf>- radicals in nanoporous crystal 12CaO · 7Al<inf>2</inf>O<inf>3</inf> studied by low-temperature heat capacity measurements

    Yoshimitsu Kohama, Takeo Tojo, Hitoshi Kawaji, Tooru Atake, Satoru Matsuishi, Hideo Hosono

    Chemical Physics Letters   421 ( 4-6 )   558 - 561   2006.4

  • Synthesis of a room temperature stable 12CaO center dot 7Al(2)O(3) electride from the melt and its application as an electron field emitter

    SW Kim, Y Toda, K Hayashi, M Hirano, H Hosono

    CHEMISTRY OF MATERIALS   18 ( 7 )   1938 - 1944   2006.4

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  • Disorder of O2- ion and incorporation of O- and O<inf>2</inf>- radicals in nanoporous crystal 12CaO · 7Al<inf>2</inf>O<inf>3</inf> studied by low-temperature heat capacity measurements

    Yoshimitsu Kohama, Takeo Tojo, Hitoshi Kawaji, Tooru Atake, Satoru Matsuishi, Hideo Hosono

    Chemical Physics Letters   421 ( 4-6 )   558 - 561   2006.4

  • Elucidation of codoping effects on the solubility enhancement of Er3+ in SiO2 glass: Striking difference between Al and P codoping

    A Saitoh, S Matsuishi, SW Choi, J Nishii, M Oto, M Hirano, H Hosono

    JOURNAL OF PHYSICAL CHEMISTRY B   110 ( 15 )   7617 - 7620   2006.4

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  • Synthesis of a room temperature stable 12CaO center dot 7Al(2)O(3) electride from the melt and its application as an electron field emitter

    SW Kim, Y Toda, K Hayashi, M Hirano, H Hosono

    CHEMISTRY OF MATERIALS   18 ( 7 )   1938 - 1944   2006.4

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  • Epitaxial film growth and superconducting behavior of sodium-cobalt oxyhydrate, NaxCoO2 center dot yH(2)O (x similar to 0.3, y similar to 1.3)

    K Sugiura, H Ohta, K Nomura, H Yanagi, M Hirano, H Hosono, K Koumoto

    INORGANIC CHEMISTRY   45 ( 5 )   1894 - 1896   2006.3

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  • Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2O3

    Kosuke Matsuzaki, Hiroshi Yanagi, Toshio Kamiya, Hidenori Hiramatsu, Kenji Nomura, Masahiro Hirano, Hideo Hosono

    Applied Physics Letters   88 ( 9 )   092106-1 - 1   2006.2

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    DOI: 10.1063/1.2179373

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  • Growth, structure and carrier transport properties of Ga2O3 epitaxial film examined for transparent field-effect transistor

    K Matsuzaki, H Hiramatsu, K Nomura, H Yanagi, T Kamiya, M Hirano, H Hosono

    THIN SOLID FILMS   496 ( 1 )   37 - 41   2006.2

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  • Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2O3

    K Matsuzaki, H Yanagi, T Kamiya, H Hiramatsu, K Nomura, M Hirano, H Hosono

    APPLIED PHYSICS LETTERS   88 ( 9 )   092106-1 - 1   2006.2

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  • Wide-gap layered oxychalcogenide semiconductors: Materials, electronic structures and optoelectronic properties

    K Ueda, H Hiramatsu, M Hirano, T Kamiya, H Hosono

    THIN SOLID FILMS   496 ( 1 )   8 - 15   2006.2

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  • Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga2O3

    K Matsuzaki, H Yanagi, T Kamiya, H Hiramatsu, K Nomura, M Hirano, H Hosono

    APPLIED PHYSICS LETTERS   88 ( 9 )   092106   2006.2

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  • Growth and structure of heteroepitaxial thin films of homologous compounds RAO(3)(MO)(m) by reactive solid-phase epitaxy: Applicability to a variety of materials and epitaxial template layers

    Y Ogo, K Nomura, H Yanagi, H Ohta, T Kamiya, M Hirano, H Hosono

    THIN SOLID FILMS   496 ( 1 )   64 - 69   2006.2

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  • Role of hydrogen atoms in the photoinduced formation of stable electron centers in H-doped 12CaO center dot 7Al(2)O(3)

    PV Sushko, AL Shluger, K Hayashi, M Hirano, H Hosono

    PHYSICAL REVIEW B   73 ( 4 )   045120   2006.1

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  • Function cultivation of transparent oxides utilizing built-in nanostructure

    H Hosono, T Kamiya, M Hirano

    BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN   79 ( 1 )   1 - 24   2006.1

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    Language:English   Publishing type:Book review, literature introduction, etc.  

    DOI: 10.1246/bcsj.79.1

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  • Role of hydrogen atoms in the photoinduced formation of stable electron centers in H-doped 12CaO center dot 7Al(2)O(3)

    PV Sushko, AL Shluger, K Hayashi, M Hirano, H Hosono

    PHYSICAL REVIEW B   73 ( 4 )   045120   2006.1

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  • Photoluminescence from Au ion-implanted nanoporous single-crystal 12CaO・7Al_2_O_3_

    M. MIYAKAWA, H, KAMIOKA M, HIRANO T, KAMIYA P. V, SUSHKO, A. L. SHLUGER, N MATSUNAMI H, HOSONO

    Phys. Rev. B   73 ( 20 )   205108   2006

  • Opto-electronic properties and light-emitting device application of widegap layered oxychalcogenides: LaCuOCh (Ch = chalcogen) and La_2_CdO_2_Se_2_

    H. HIRAMATSU, H. KAMIOKA, K, UEDA H, OHTA T, KAMIHARA M, HIRANO H, HOSONO

    Phys. Stat. Sol.(a)   203 ( 11 )   2800 - 2811   2006

  • Integrated circuits based on amorphous indium-gallium-zinc-oxide-channel thin-film transistors

    M. Ofuji, K. Abe, N. Kaji, R. Hayashi, M. Sano, H. Kumomi, K. Nomura, T. Kamiya, H. Hosono

    ECS Transactions   3 ( 8 )   293 - 300   2006

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    DOI: 10.1149/1.2356366

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  • a-Siの10倍の移動度と低コストを実現する透明TFT向け無機半導体技術

    細野秀雄

    FPD   2007   214 - 226   2006

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  • Possible polaron effect in complex terahertz conductivity of electron-doped nanoporous crystal 12CaO center dot 7Al(2)O(3)

    J. Kitagawa, M. Ishizaka, Y. Kadoya, Satoru Matsuishi, H. Hosono

    J. Phys. Soc. Jpn   75 ( 11 )   118001   2006

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  • Disorder of O2- ion and incorporation of O- and O-2(-) radicals in nanoporous crystal 12CaO center dot 7Al(2)O(3) studied by low-temperature heat capacity measurements

    Yoshimitsu Kohama, Takeo Tojo, Hitoshi Kawaji, Tooru Atake, Satoru Matsuishi, Hideo Hosono

    Chem. Phys. Lett.   421   558 - 561   2006

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  • Femtosecond-laser-encoded distributed-feedback color center laser in lithium fluoride single crystal

    K. Kawamura, T. Kurobori, M. Hirano, H. Hosono

    FEMTOSECOND PHENOMENA AND NONLINEAR OPTICS III   6400   640007-1-9   2006

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  • Function Cultivation in Transparent Oxides Utilizing Built-in Nanostructures

    H.HOSONO

    Proceedings of the 16th Iketani Conference, Masuko Symposium   565 - 575   2006

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  • Photoemission Study of a Na0.8CoO_2_ Epitaxial Thin Film with Large Thermoelectric Power

    Y. ISHIDA, H, OHTA A. FUJIMORI H, HOSONO

    AIP Conference Proceedings   850   1215 - 1216   2006

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  • 講演会報告「配列ナノ空間を利用した機能開拓とその応用」

    細野秀雄, 谷垣勝巳

    応用物理   75   118   2006

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  • 反応性固相エピタキシャル成長法

    太田裕道, 野村研二, 平松秀典, 平野正浩, 細野秀雄

    リガクジャーナル   37 ( 1 )   3 - 10   2006

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  • 透明半導体:最近の進歩から

    細野秀雄

    マテリアル インテグレーション   19 ( 6 )   49 - 57   2006

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  • Photoluminescence from Au ion-implanted nanoporous single-crystal 12CaO・7Al_2_O_3_

    M MIYAKAWA H, KAMIOKA M, HIRANO T, KAMIYA P. V, SUSHKO, A. L. SHLUGER, N. MATSUMAMI, H, HOSONO

    Phys. Rev. B   73 ( 20 )   205108   2006

  • 固体酸化物での酸素の拡散

    梶原浩一, 細野秀雄

    化学   61   66 - 67   2006

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  • 電子放出源としてのC12A7エレクトライド

    戸田善丈, 細野秀雄

    月刊ディスプレイ   12 ( 6 )   18 - 22   2006

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  • Opto-electronic properties and light-emitting device application of widegap layered oxychalcogenides: LaCuOCh (Ch = chalcogen) and La_2_CdO_2_Se_2_

    H. HIRAMATSU, H. KAMIOKA, K, UEDA H, OHTA T, KAMIHARA M, HIRANO H, HOSONO

    Phys. Stat. Sol.(a)   203 ( 11 )   2800 - 2811   2006

  • Photoemission Study of a Na0.8CoO_2_ Epitaxial Thin Film with Large Thermoelectric Power

    Y. ISHIDA, H, OHTA A. FUJIMORI H, HOSONO

    AIP Conference Proceedings   850   1215 - 1216   2006

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  • Possible polaron effect in complex terahertz conductivity of electron-doped nanoporous crystal 12CaO center dot 7Al(2)O(3)

    J. Kitagawa, M. Ishizaka, Y. Kadoya, Satoru Matsuishi, H. Hosono

    J. Phys. Soc. Jpn   75 ( 11 )   118001   2006

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  • Disorder of O2- ion and incorporation of O- and O-2(-) radicals in nanoporous crystal 12CaO center dot 7Al(2)O(3) studied by low-temperature heat capacity measurements

    Yoshimitsu Kohama, Takeo Tojo, Hitoshi Kawaji, Tooru Atake, Satoru Matsuishi, Hideo Hosono

    Chem. Phys. Lett.   421   558 - 561   2006

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  • Mechanisms of oxygen ion diffusion in a nanoporous complex oxide 12CaO7 Al2 O3

    Peter V. Sushko, Alexander L. Shluger, Katsuro Hayashi, Masahiro Hirano, Hideo Hosono

    Physical Review B - Condensed Matter and Materials Physics   73 ( 1 )   014101   2006

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  • Synthesis of a Room Temperature Stable 12CaO・7Al_2_O_3_ Electride from the Melt and Its Application as an Electron Field Emitter

    S. W. KIM, Y, TODA K, HAYASHI M, HIRANO H, HOSONO

    Chem. Mater.   18 ( 7 )   1938 - 1944   2006

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  • Amorphous Oxide Channel TFTs Fabricated with RF Sputtering Method

    H.KUMOMI, N.KAJI, H.YABUTA, M. SANO, K, ABE T. DEN K, NOMURA T, KAMIYA H, HOSONO

    Proc.2nd ITC   176 - 179   2006

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  • Photoluminescence from Au ion-implanted nanoporous single-crystal 12CaO・7Al_2_O_3_

    M. MIYAKAWA, H, KAMIOKA M, HIRANO T, KAMIYA P. V, SUSHKO, A. L. SHLUGER, N MATSUNAMI H, HOSONO

    Phys. Rev. B   73 ( 20 )   205108   2006

  • Function Cultivation in Transparent Oxides Utilizing Built-in Nanostructures

    H.HOSONO

    Proceedings of the 16th Iketani Conference, Masuko Symposium   565 - 575   2006

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  • Electron Carrier Generation in a Refractory Oxide 12CaO・7Al_2_O_3_ by Heating in Reducing Atmosphere: Conversion from an Insulator to a Persistent Conductor

    S-Wng KIM, K, HAYASHI M, HIRANO H, HOSONO I. TANAKA

    J. Am. Ceram. Soc.   89 ( 10 )   3294 - 3298   2006

  • Reactive oxygen radicals in amorphous SiO2

    梶原浩一, 平野正浩, SKUJA Linards, SKUJA Linards, 細野秀雄, 細野秀雄

    日本化学会講演予稿集   86th ( 1 )   2006

  • Mechanisms of oxygen ion diffusion in a nanoporous complex oxide 12CaO7 Al2 O3

    Peter V. Sushko, Alexander L. Shluger, Katsuro Hayashi, Masahiro Hirano, Hideo Hosono

    Physical Review B - Condensed Matter and Materials Physics   73 ( 1 )   014101   2006

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  • Synthesis of a Room Temperature Stable 12CaO・7Al_2_O_3_ Electride from the Melt and Its Application as an Electron Field Emitter

    S. W. KIM, Y, TODA K, HAYASHI M, HIRANO H, HOSONO

    Chem. Mater.   18 ( 7 )   1938 - 1944   2006

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  • Amorphous Oxide Channel TFTs Fabricated with RF Sputtering Method

    H.KUMOMI, N.KAJI, H.YABUTA, M. SANO, K, ABE T. DEN K, NOMURA T, KAMIYA H, HOSONO

    Proc.2nd ITC   176 - 179   2006

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  • Photoluminescence from Au ion-implanted nanoporous single-crystal 12CaO・7Al_2_O_3_

    M MIYAKAWA H, KAMIOKA M, HIRANO T, KAMIYA P. V, SUSHKO, A. L. SHLUGER, N. MATSUMAMI, H, HOSONO

    Phys. Rev. B   73 ( 20 )   205108   2006

  • Field-induced current modulation in epitaxial film of deep-ultraviolet transparent oxide semiconductor Ga_2_O_3_

    K. MATSUZAKI, H, YANAGI T, KAMIYA H, HIRAMATSU, K, NOMURA M, HIRANO H, HOSONO

    Appl. Phys. Lett.   88   092106   2006

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  • Field-induced current modulation in nanoporous semiconductor, electron-doped 12CaO·7Al2O3

    Toshio Kamiya, Shouzou Aiba, Masashi Miyakawa, Kenji Nomura, Satoru Matsuishi, Katsuro Hayashi, Kazushige Ueda, Masahiro Hirano, Hideo Hosono

    Chemistry of Materials   17 ( 25 )   6311 - 6316   2005.12

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    Language:English  

    DOI: 10.1021/cm051904s

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  • Vacuum-ultraviolet absorption of hydrogenated and deuterated silanol groups and interstitial water molecules in amorphous SiO2

    Koichi Kajihara, Masahiro Hirano, Linards Skuja, Hideo Hosono

    Physical Review B - Condensed Matter and Materials Physics   72 ( 21 )   214112   2005.12

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  • Localisation assisted by the lattice relaxation and the optical absorption of extra-framework electrons in 12CaO center dot Al2O3

    PV Sushko, AL Shluger, K Hayashi, M Hirano, H Hosono

    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS   25 ( 5-8 )   722 - 726   2005.12

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  • Field-induced current modulation in nanoporous semiconductor, electron-doped 12CaO center dot 7Al(2)O(3)

    T Kamiya, S Aiba, M Miyakawa, K Nomura, S Matsuishi, K Hayashi, K Ueda, M Hirano, H Hosono

    CHEMISTRY OF MATERIALS   17 ( 25 )   6311 - 6316   2005.12

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  • Elucidation of coordination structure around Ce3+ in doped SiO2 glasses using pulsed electron paramagnetic resonance: Effect of phosphorus, boron, and phosphorus-boron codoping

    A Saitoh, S Matsuishi, M Oto, T Miura, M Hirano, H Hosono

    PHYSICAL REVIEW B   72 ( 21 )   212101   2005.12

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  • Intense thermal field electron emission from room-temperature stable electride

    Y Toda, SW Kim, K Hayashi, M Hirano, T Kamiya, H Hosono, T Haraguchi, H Yasuda

    APPLIED PHYSICS LETTERS   87 ( 25 )   254103   2005.12

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  • Hydride ion as a two-electron donor in a nanoporous crystalline semiconductor 12CaO center dot 7Al(2)O(3)

    K Hayashi, PV Sushko, AL Shluger, M Hirano, H Hosono

    JOURNAL OF PHYSICAL CHEMISTRY B   109 ( 50 )   23836 - 23842   2005.12

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  • Field-induced current modulation in nanoporous semiconductor, electron-doped 12CaO center dot 7Al(2)O(3)

    T Kamiya, S Aiba, M Miyakawa, K Nomura, S Matsuishi, K Hayashi, K Ueda, M Hirano, H Hosono

    CHEMISTRY OF MATERIALS   17 ( 25 )   6311 - 6316   2005.12

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  • Localisation assisted by the lattice relaxation and the optical absorption of extra-framework electrons in 12CaO center dot Al2O3

    PV Sushko, AL Shluger, K Hayashi, M Hirano, H Hosono

    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS   25 ( 5-8 )   722 - 726   2005.12

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  • Hydride ion as a two-electron donor in a nanoporous crystalline semiconductor 12CaO center dot 7Al(2)O(3)

    K Hayashi, PV Sushko, AL Shluger, M Hirano, H Hosono

    JOURNAL OF PHYSICAL CHEMISTRY B   109 ( 50 )   23836 - 23842   2005.12

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  • Excitonic blue luminescence from p-LaCuOSe/n-InGaZn5O8 light-emitting diode at room temperature

    H Hiramatsu, K Ueda, H Ohta, T Kamiya, M Hirano, H Hosono

    APPLIED PHYSICS LETTERS   87 ( 21 )   211107   2005.11

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  • Energetics of formation and oxidation of microporous calcium aluminates: A new class of electrides and ionic conductors

    O Trofymluk, Y Toda, H Hosono, A Navrotsky

    CHEMISTRY OF MATERIALS   17 ( 22 )   5574 - 5579   2005.11

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  • Carrier generation in wide-gap conductor, zinc antimonate

    N Kikuchi, H Hosono, H Kawazoe, O Tanegashima, Ota, I, Y Kimura

    JOURNAL OF THE AMERICAN CERAMIC SOCIETY   88 ( 10 )   2793 - 2797   2005.10

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  • Hydride ion as photoelectron donor in microporous crystal

    S Matsuishi, K Hayashi, M Hirano, H Hosono

    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY   127 ( 36 )   12454 - 12455   2005.9

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  • Valence-band structures of layered oxychalcogenides, LaCuOCh (Ch = S, Se, and Te), studied by ultraviolet photoemission spectroscopy and energy-band calculations

    Kazushige Ueda, Hideo Hosono, Noriaki Hamada

    Journal of Applied Physics   98 ( 4 )   043506   2005.8

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    DOI: 10.1063/1.2001749

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  • Growth of epitaxial ZnO thin films on lattice-matched buffer layer: Application of InGaO3(ZnO)(6) single-crystalline thin film

    Y Takeda, K Nomura, H Ohta, H Yanagi, T Kamiya, M Hirano, H Hosono

    THIN SOLID FILMS   486 ( 1-2 )   28 - 32   2005.8

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  • Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4

    A Takagi, K Nomura, H Ohta, H Yanagi, T Kamiya, M Hirano, H Hosono

    THIN SOLID FILMS   486 ( 1-2 )   38 - 41   2005.8

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  • Large thermoelectric performance of heavily Nb-doped SrTiO3 epitaxial film at high temperature

    S Ohta, T Nomura, H Ohta, M Hirano, H Hosono, K Koumoto

    APPLIED PHYSICS LETTERS   87 ( 9 )   095108   2005.8

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  • Reactions of SiCl groups in amorphous SiO2 with mobile interstitial chemical species: Formation of interstitial Cl-2 and HCl molecules, and role of interstitial H2O molecules

    K Kajihara, M Hirano, L Skuja, H Hosono

    JOURNAL OF APPLIED PHYSICS   98 ( 4 )   043415-1~9   2005.8

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  • Large thermoelectric performance of heavily Nb-doped SrTiO3 epitaxial film at high temperature

    S Ohta, T Nomura, H Ohta, M Hirano, H Hosono, K Koumoto

    APPLIED PHYSICS LETTERS   87 ( 9 )   092108   2005.8

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  • Elucidation of phosphorus co-doping effect on photoluminescence in Ce3+-activated SiO2 glasses: Determination of solvation shell structure by pulsed EPR

    A Saitoh, S Murata, S Matsuishi, M Oto, T Miura, M Hirano, H Hosono

    CHEMISTRY LETTERS   34 ( 8 )   1116 - 1117   2005.8

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  • Valence-band structures of layered oxychalcogenides, LaCuOCh (Ch=S, Se, and Te), studied by ultraviolet photoemission spectroscopy and energy-band calculations

    K Ueda, H Hosono, N Hamada

    JOURNAL OF APPLIED PHYSICS   98 ( 4 )   043506   2005.8

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  • Two-dimensional electronic structure and multiple excitonic states in layered oxychalcogenide semiconductors, LaCuOCh (Ch=S, Se, Te): Optical properties and relativistic ab initio study

    T Kamiya, K Ueda, H Hiramatsu, H Kamioka, H Ohta, M Hirano, H Hosono

    THIN SOLID FILMS   486 ( 1-2 )   98 - 103   2005.8

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  • Interstitial oxygen molecules in amorphous SiO2. III. Measurements of dissolution kinetics, diffusion coefficient, and solubility by infrared photoluminescence

    K Kajihara, H Kamioka, M Hirano, T Miura, L Skuja, H Hosono

    JOURNAL OF APPLIED PHYSICS   98 ( 1 )   013529   2005.7

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  • Thermoelectric properties of delafossite-type layered oxides Agln(1-x)Sn(x)O(2)

    M Yasukawa, K Ikeuchi, T Kono, K Ueda, H Hosono

    JOURNAL OF APPLIED PHYSICS   98 ( 1 )   013706   2005.7

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  • Interstitial oxygen molecules in amorphous SiO2. I. Quantitative concentration analysis by thermal desorption, infrared photoluminescence, and vacuum-ultraviolet optical absorption

    K Kajihara, M Hirano, M Uramoto, Y Morimoto, L Skuja, H Hosono

    JOURNAL OF APPLIED PHYSICS   98 ( 1 )   013527   2005.7

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  • Effect of boundary plane on the atomic structure of [0001] Sigma 7 tilt grain boundaries in ZnO

    F Oba, Y Sato, T Yamamoto, H Ohta, H Hosono, Y Ikuhara

    JOURNAL OF MATERIALS SCIENCE   40 ( 12 )   3067 - 3074   2005.6

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  • Electrical properties and structure of p-type amorphous oxide semiconductor xZnO center dot Rh2O3

    T Kamiya, S Narushima, H Mizoguchi, K Shimizu, K Ueda, H Ohta, M Hirano, H Hosono

    ADVANCED FUNCTIONAL MATERIALS   15 ( 6 )   968 - 974   2005.6

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  • Effect of boundary plane on the atomic structure of [0001] Sigma 7 tilt grain boundaries in ZnO

    F Oba, Y Sato, T Yamamoto, H Ohta, H Hosono, Y Ikuhara

    JOURNAL OF MATERIALS SCIENCE   40 ( 12 )   3067 - 3074   2005.6

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  • Electrical properties and structure of p-type amorphous oxide semiconductor xZnO center dot Rh2O3

    T Kamiya, S Narushima, H Mizoguchi, K Shimizu, K Ueda, H Ohta, M Hirano, H Hosono

    ADVANCED FUNCTIONAL MATERIALS   15 ( 6 )   968 - 974   2005.6

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  • Excitonic properties related to valence band levels split by spin-orbit interaction in layered oxychalcogenide LaCuOCh(Ch = S,Se)

    H Kamioka, H Hiramatsu, M Hirano, K Ueda, T Kamiya, H Hosono

    JOURNAL OF LUMINESCENCE   112 ( 1-4 )   66 - 70   2005.4

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  • Excitonic properties related to valence band levels split by spin-orbit interaction in layered oxychalcogenide LaCuOCh(Ch = S,Se)

    H Kamioka, H Hiramatsu, M Hirano, K Ueda, T Kamiya, H Hosono

    JOURNAL OF LUMINESCENCE   112 ( 1-4 )   66 - 70   2005.4

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  • Organic field-effect transistors based on new TTF-based liquid crystalline materials

    M Katsuhara, Aoyagi, I, H Nakajima, T Mori, T Kambayashi, M Ofuji, Y Takanishi, K Ishikawa, H Takezoe, H Hosono

    SYNTHETIC METALS   149 ( 2-3 )   219 - 223   2005.3

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  • Simple and efficient fabrication of room temperature stable electride: Melt-solidification and glass ceramics

    SungWng Kim, Masashi Miyakawa, Katsuro Hayashi, Takashi Sakai, Masahiro Hirano, Hideo Hosono

    Journal of the American Chemical Society   127 ( 5 )   1370 - 1371   2005.2

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  • Photoinduced generation of electron anions in H-doped nanoporous oxide 12CaO center dot 7Al(2)O(3): Toward an optically controlled formation of electrides

    PV Sushko, AL Shluger, K Hayashi, M Hirano, H Hosono

    APPLIED PHYSICS LETTERS   86 ( 9 )   092101-1?3   2005.2

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  • Applications of wide-band-gap materials for optoelectronic functional devices fabricated by a pair of interfering femtosecond laser pulses

    T Kurobori, T Yamakage, Y Hirose, K Kawamura, M Hirano, H Hosono

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 2 )   910 - 913   2005.2

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  • Photoinduced generation of electron anions in H-doped nanoporous oxide 12CaO center dot 7Al(2)O(3): Toward an optically controlled formation of electrides

    PV Sushko, AL Shluger, K Hayashi, M Hirano, H Hosono

    APPLIED PHYSICS LETTERS   86 ( 9 )   092101-1?3   2005.2

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  • Simple and efficient fabrication of room temperature stable electride: Melt-solidification and glass ceramics

    SW Kim, M Miyakawa, K Hayashi, T Sakai, M Hirano, H Hosono

    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY   127 ( 5 )   1370 - 1371   2005.2

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  • Electronic insulator-conductor conversion in hydride ion-doped 12CaO center dot 7Al(2)O(3) by electron-beam irradiation

    K Hayashi, Y Toda, T Kamiya, M Hirano, M Yamanaka, Tanaka, I, T Yamamoto, H Hosono

    APPLIED PHYSICS LETTERS   86 ( 2 )   022109   2005.1

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  • Reactive solid-phase epitaxial growth of NaxCoO2 (x ∼ 0.83) via lateral diffusion of Na into a cobalt oxide epitaxial layer

    Hiromichi Ohta, Sung-Wng Kim, Shingo Ohta, Kunihito Koumoto, Masahiro Hirano, Hideo Hosono

    Crystal Growth and Design   5 ( 1 )   25 - 28   2005.1

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    DOI: 10.1021/cg049818c

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  • Reactive solid-phase epitaxial growth of NaxCoO2 (x similar to 0.83) via lateral diffusion of Na into a cobalt oxide epitaxial layer

    H Ohta, SW Kim, S Ohta, K Koumoto, M Hirano, H Hosono

    CRYSTAL GROWTH & DESIGN   5 ( 1 )   25 - 28   2005.1

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  • Formation of inorganic electride thin films via site-selective extrusion by energetic inert gas ions

    M Miyakawa, Y Toda, K Hayashi, M Hirano, T Kamiya, N Matsunami, H Hosono

    JOURNAL OF APPLIED PHYSICS   97 ( 2 )   023510   2005.1

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  • Electronic insulator-conductor conversion in hydride ion-doped 12CaO center dot 7Al(2)O(3) by electron-beam irradiation

    K Hayashi, Y Toda, T Kamiya, M Hirano, M Yamanaka, Tanaka, I, T Yamamoto, H Hosono

    APPLIED PHYSICS LETTERS   86 ( 2 )   022109   2005.1

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  • Built-in quantum dots in nano-porous crystal 12CaO center dot 7Al(2)O(3): Simplified views for electronic structure and carrier transport

    T Kamiya, H Hosono

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 1B )   774 - 782   2005.1

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  • Epitaxial growth of a copper-phthalocyanine on a transparent conductive substrate with an atomically flat surface

    T Kambayashi, H Ohta, H Hoshi, M Hirano, H Hosono, H Takezoe, K Ishikawa

    CRYSTAL GROWTH & DESIGN   5 ( 1 )   143 - 146   2005.1

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  • 高性能フレキシブルTFT用材料としてのアモルファス酸化物半導体の材料探索とTFT特性

    野村研二, 神谷利夫, 細野秀雄

    第32回アモルファスセミナー テキスト   17   2005

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  • Intense thermal field electron emission from room-temperature stable electride

    Yoshitake Toda, Sung Wng Kim, Katsuro Hayashi, Masahiro Hirano, Toshio Kamiya, Hideo Hosono, Takeshi Haraguchi, Hiroshi Yasuda

    Applied Physics Letters   87 ( 25 )   1 - 3   2005

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    DOI: 10.1063/1.2149989

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  • Bipolar Room Temperature Ferromagnetic Semiconductor LaMnOP_4_

    E. MOTOMITSU, M, HIRANO H, YANAGI T, KAMIYA H, HOSONO

    J. J. Appl. Phys.   44 ( 42-45 )   L1344 - L1347   2005

  • Excess Oxygen in 12CaO・7Al_2_O_3_ Studied by Thermogravimetric Analysis

    K. HAYASHI, M, HIRANO H, HOSONO

    Chem. Lett.   34 ( 4 )   586 - 587   2005

  • Interstitial oxygen molecules in amorphous SiO_2_. II. The influence of common dopants (SiOH, SiF, and SiCl groups) and fictive temperature on the decay of singlet photoluminescence

    K. KAJIHARA, H, KAMIOKA M, HIRANO T, MIURA L, SKUJA H, HOSONO

    J.Appl. Phys.   98   013528   2005

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  • Transparent High Performance FET using Amorphous Oxide Semiconductors

    H. HOSONO T, KAMIYA, K, NOMURA

    Digest of Technical papers of AM-LCD   83 - 86   2005

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  • Transparent flexible transistor using amorphous oxide semiconductors as channel layer

    HOSONO Hideo, KAMIYA Toshio, NOMURA Kenji

    74 ( 7 )   910 - 916   2005

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  • 不思議なナノ籠-透明酸化物に機能を与える-

    細野秀雄

    Japan Nanonet Bulletin   7 - 8   2005

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  • フェムト秒レーザーと透明材料との相互作用

    細野秀雄, 河村賢一

    レーザー協会誌   30 ( 2 )   7 - 13   2005

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  • 透明酸化物半導体:物質設計とデバイス応用

    細野秀雄

    光学   34   335 - 345   2005

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  • フェムト秒シングルパルス干渉露光法による透明材料のナノ加工

    河村賢一, 平野正浩, 細野秀雄

    レーザ加工学会誌   12 ( 2 )   12 - 16   2005

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  • Electronic structures and device applications of transparent oxide semiconductors: What is the real merit of oxide semiconductors?

    T Kamiya, H Hosono, T Kamiya, H Hosono, H Hosono

    INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY   2 ( 4 )   285 - 294   2005

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  • 透明酸化物半導体を用いた透明電界効果トランジスタ

    野村研二, 太田裕道, 神谷利夫, 平野正浩, 細野秀雄

    マテリアルインテグレーション   2005

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  • アモルファス透明酸化物半導体を用いた高性能フレキシブル薄膜トランジスタの室温形成

    神谷利夫, 野村研二, 細野秀雄

    マテリアルステージ   2005

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  • Thermodynamics and Kinetics of Hydroxide Ion Formation in 12CaO●7Al_2_O_3_

    K. HAYASHI, M, HIRANO H, HOSONO

    J. Phys. Chem.,B   109 ( 24 )   11900 - 11906   2005

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  • Formation of inorganic electride thin films via site-selective extrusion by energetic inert gas ions

    M. MIYAKAWA, Y. TODA, K. HAYASHI M, HIRANO T, KAMIYA N. MATSUNAMI H, HOSONO

    J. Appl. Phys.   97   023510   2005

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  • 透明酸化物半導体を使った高性能な薄膜トランジスタ

    神谷利夫, 野村研二, 細野秀雄

    電子ペーパー工業化最前線   2005

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  • 軽量で曲がる透明な高性能トランジスタの開発

    細野秀雄

    OHM   2月号   8 - 9   2005

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  • ZnO基半導体を使った透明トランジスタ

    細野秀雄, 神谷利夫, 野村研二

    応用物理学会応用電子物性分科会誌   11   16 - 19   2005

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  • 目に見えないコンピューターができる?

    細野秀雄

    ニュートン, ものしり科学   86 - 91   2005

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  • 光学的性質 I 代表的酸化物と光との相互作用:SiO_2_ を例として

    梶原浩一, 細野秀雄

    セラミックス   2005

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  • Defects in oxide glasses

    L. Skuja, M. Hirano, H. Hosono, K. Kajihara

    Physica Status Solidi C: Conferences   2 ( 1 )   15 - 24   2005

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  • Decomposition of peroxy radicals in SiO2 glass with X-rays or KrF laser light

    Koichi Kajihara, Linards Skuja, Masahiro Hirano, Hideo Hosono

    Physica Status Solidi C: Conferences   2 ( 1 )   314 - 317   2005

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  • Electrical and photonic functions originating from low-dimensional structures in wide-gap semiconductors LnCuOCh (Ln = lanthanide, Ch = chalcogen): A review

    Hidenori Hiramatsu, Hayato Kamioka, Kazushige Ueda, Masahiro Hirano, Hideo Hosono

    Journal of the Ceramic Society of Japan   113 ( 1313 )   10 - 16   2005

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    Language:English   Publishing type:Book review, literature introduction, etc.   Publisher:Ceramic Society of Japan  

    DOI: 10.2109/jcersj.113.10

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  • Excess Oxygen in 12CaO・7Al_2_O_3_ Studied by Thermogravimetric Analysis

    K. HAYASHI, M, HIRANO H, HOSONO

    Chem. Lett.   34 ( 4 )   586 - 587   2005

  • Interstitial oxygen molecules in amorphous SiO_2_. II. The influence of common dopants (SiOH, SiF, and SiCl groups) and fictive temperature on the decay of singlet photoluminescence

    K. KAJIHARA, H, KAMIOKA M, HIRANO T, MIURA L, SKUJA H, HOSONO

    J.Appl. Phys.   98   013528   2005

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  • Bipolar Room Temperature Ferromagnetic Semiconductor LaMnOP_4_

    E. MOTOMITSU, M, HIRANO H, YANAGI T, KAMIYA H, HOSONO

    J. J. Appl. Phys.   44 ( 42-45 )   L1344 - L1347   2005

  • Growth and structure of heteroepitaxial thin films of homologous compounds RAO3(MO)m by reactive solid-phase epitaxy: applicability to a variety of materials and epitaxial template layers

    Y. OGO K, NOMURA H, YANAGI H, OHTA T, KAMIYA M, HIRANO H, HOAONO

    Thin Solid Films   -   2005

  • Distributed-feedback color center lasers in wide-band gap materials fabricated by a pair of chirped femtosecond pulses

    T. Kurobori, Y. Hirose, K. Kawamura, M. Hirano, H. Hosono

    Physica Status Solidi C: Conferences   2 ( 1 )   637 - 640   2005

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  • Simple and Efficient Fabrication of Room Temperature Stable Electride: Melt-Solidification and Glass Ceramics

    S. W. KIM, M, MIYAKAWA K, HAYASHI T, SAKAI M, HIRANO H, HOSONO

    J. Am. Chem. Soc.   127 ( 5 )   1370 - 1371   2005

  • Built-in Quantum Dots in Nano-Porous Crystal 12CaO・7Al_2_O_3_: Simplified Views for Electronic Structure and Carrier Transport

    T. KAMIYA, H, HOSONO

    Jpn. J. Appl. Phys.   44 ( 1B )   774 - 782   2005

  • Thermodynamics and Kinetics of Hydroxide Ion Formation in 12CaO●7Al_2_O_3_

    K. HAYASHI, M, HIRANO H, HOSONO

    J. Phys. Chem.,B   109 ( 24 )   11900 - 11906   2005

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  • Transparent High Performance FET using Amorphous Oxide Semiconductors

    H. HOSONO T, KAMIYA, K, NOMURA

    Digest of Technical papers of AM-LCD   83 - 86   2005

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  • 高性能フレキシブルTFT実現に向けたアモルファス酸化物半導体の材料探索とフレキシブルTFT特性

    野村研二, 神谷利夫, 細野秀雄

    成形加工(プラスチック成形加工学会誌)   17   588 - 592   2005

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  • Superoxide ion encaged in nanoporous crystal 12CaO-7A1(2)O(3) studied by continuous wave and pulsed electron paramagnetic resonance

    S Matsuishi, K Hayashi, M Hirano, Tanaka, I, H Hosono

    JOURNAL OF PHYSICAL CHEMISTRY B   108 ( 48 )   18557 - 18568   2004.12

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  • Fluorine doped silica glass fiber for deep ultraviolet light

    M Oto, S Kikugawa, T Miura, M Hirano, H Hosono

    JOURNAL OF NON-CRYSTALLINE SOLIDS   349   133 - 138   2004.12

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  • Partial oxidation of methane to syngas over promoted C12A7

    SW Yang, JN Kondo, K Hayashi, M Hirano, K Domen, H Hosono

    APPLIED CATALYSIS A-GENERAL   277 ( 1-2 )   239 - 246   2004.12

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  • Fluorine doped silica glass fiber for deep ultraviolet light

    M Oto, S Kikugawa, T Miura, M Hirano, H Hosono

    JOURNAL OF NON-CRYSTALLINE SOLIDS   349   133 - 138   2004.12

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  • Spontaneous oxygen loading into SiO2 glass by thermal anneal

    K Kajihara, T Miura, H Kamioka, M Hirano, L Skuja, H Hosono

    JOURNAL OF NON-CRYSTALLINE SOLIDS   349   205 - 208   2004.12

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  • Optical properties and two-dimensional electronic structure in wide-gap layered oxychalcogenide: La2CdO2Se2

    H Hiramatsu, K Ueda, T Kamiya, H Ohta, M Hirano, H Hosono

    JOURNAL OF PHYSICAL CHEMISTRY B   108 ( 45 )   17344 - 17351   2004.11

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  • Observation of Jonscher law in ac hopping conduction of the electron-doped nanoporous crystal 12CaO center dot 7Al(2)O(3) in a THz frequency range

    H Harimochi, J Kitagawa, M Ishizaka, Y Kadoya, M Yamanishi, S Matsuishi, H Hosono

    PHYSICAL REVIEW B   70 ( 19 )   193104   2004.11

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  • Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

    K Nomura, H Ohta, A Takagi, T Kamiya, M Hirano, H Hosono

    NATURE   432 ( 7016 )   488 - 492   2004.11

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  • Interconversion between non-bridging oxygen hole center and peroxy radical in F(2)-laser-irradiated SiO(2) glass

    K Kajihara, L Skuja, M Hirano, H Hosono

    JOURNAL OF NON-CRYSTALLINE SOLIDS   345   219 - 223   2004.10

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  • Electrical properties and local structure of n-type conducting amorphous indium sulphide

    S Narushima, M Hiroki, K Ueda, KI Shimizu, T Kamiya, M Hirano, H Hosono

    PHILOSOPHICAL MAGAZINE LETTERS   84 ( 10 )   665 - 671   2004.10

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  • Heteroepitaxial growth of wide gap p-type semiconductors: LnCuOCh (Lr=La, Pr and Nd; Ch=S or Se) by reactive solid-phase epitaxy

    H Hiramatsu, K Ueda, K Takafuji, H Ohta, M Hirano, T Kamiya, H Hosono

    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING   79 ( 4-6 )   1517 - 1520   2004.9

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  • Carrier transport in transparent oxide semiconductor with intrinsic structural randomness probed using single-crystalline InGaO3(ZnO)(5) films

    K Nomura, T Kamiya, H Ohta, K Ueda, M Hirano, H Hosono

    APPLIED PHYSICS LETTERS   85 ( 11 )   1993 - 1995   2004.9

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  • Atomic structure of [0001]-tilt grain boundaries in ZnO: A high-resolution TEM study of fiber-textured thin films

    F Oba, H Ohta, Y Sato, H Hosono, T Yamamoto, Y Ikuhara

    PHYSICAL REVIEW B   70 ( 12 )   125415   2004.9

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  • Effect of stability and diffusivity of extra-framework oxygen species on the formation of oxygen radicals in 12CaO center dot 7Al(2)O(3)

    K Hayashi, N Ueda, M Hirano, H Hosono

    SOLID STATE IONICS   173 ( 1-4 )   89 - 94   2004.9

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  • 透明酸化物のナノ構造を活用した機能開拓 (特集/期待される創造科学技術開発研究)

    細野 秀雄, 神谷 利夫

    化学工業   55 ( 9 )   683 - 691   2004.9

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  • Degenerate electrical conductive and excitonic photoluminescence properties of epitaxial films of wide gap p-type layered oxychalcogenides, LnCuOCh (Ln=La, Pr and Nd; Ch=S or Se)

    H Hiramatsu, K Ueda, K Takafuji, H Ohta, M Hirano, T Kamiya, H Hosono

    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING   79 ( 4-6 )   1521 - 1523   2004.9

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  • Laser-active colour centres with functional periodic structures in LiF fabricated by two interfering femtosecond laser pulses

    T Kurobori, T Kitao, Y Hirose, K Kawamura, D Takamizu, M Hirano, H Hosono

    RADIATION MEASUREMENTS   38 ( 4-6 )   759 - 762   2004.8

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  • Photonic materials utilizing naturally occurring nanostructures

    H Kamioka, H Hiramatsu, K Hayashi, M Hirano, H Hosono

    JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY A-CHEMISTRY   166 ( 1-3 )   141 - 147   2004.8

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  • Energy band structure of LaCuOCh (Ch = S, Se and Te) calculated by the full-potential linearized augmented plane-wave method

    Kazushige Ueda, Hideo Hosono, Noriaki Hamada

    Journal of Physics Condensed Matter   16 ( 28 )   5179 - 5186   2004.7

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  • Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln = La-Nd; Ch = S-Te) by reactive solid-phase epitaxy

    H Hiramatsu, K Ueda, K Takafuji, H Ohta, M Hirano, T Kamiya, H Hosono

    JOURNAL OF MATERIALS RESEARCH   19 ( 7 )   2137 - 2143   2004.7

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  • Atomic and electronic structures of Ni/YSZ(111) interface

    T Sasaki, K Matsunaga, H Ohta, H Hosono, T Yamamoto, Y Ikuhara

    MATERIALS TRANSACTIONS   45 ( 7 )   2137 - 2143   2004.7

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  • Energy band structure of LaCuOCh (Ch = S, Se and Te) calculated by the full-potential linearized augmented plane-wave method

    K Ueda, H Hosono, N Hamada

    JOURNAL OF PHYSICS-CONDENSED MATTER   16 ( 28 )   5179 - 5186   2004.7

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  • Quantum beat between two excitonic levels split by spin-orbit interactions in the oxychalcogenide LaCuOS

    H Kamioka, H Hiramatsu, M Hirano, K Ueda, T Kamiya, H Hosono

    OPTICS LETTERS   29 ( 14 )   1659 - 1661   2004.7

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  • Functioning of traditional ceramics 12CaO·7Al 2O 3 utilizing built-in nano-porous structure

    Hideo Hosono

    Science and Technology of Advanced Materials   5 ( 4 )   409 - 416   2004.7

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    Language:English   Publishing type:Book review, literature introduction, etc.  

    DOI: 10.1016/j.stam.2004.01.012

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  • Fabrication of heteroepitaxial thin films of layered oxychalcogenides LnCuOCh (Ln = La-Nd; Ch = S-Te) by reactive solid-phase epitaxy

    H Hiramatsu, K Ueda, K Takafuji, H Ohta, M Hirano, T Kamiya, H Hosono

    JOURNAL OF MATERIALS RESEARCH   19 ( 7 )   2137 - 2143   2004.7

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  • Quantum beat between two excitonic levels split by spin-orbit interactions in the oxychalcogenide LaCuOS

    H Kamioka, H Hiramatsu, M Hirano, K Ueda, T Kamiya, H Hosono

    OPTICS LETTERS   29 ( 14 )   1659 - 1661   2004.7

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  • Functioning of traditional ceramics 12CaO center dot 7Al(2)O(3) utilizing built-in nano-porous structure

    H Hosono

    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS   5 ( 4 )   409 - 416   2004.7

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  • Natural nanostructures in ionic semiconductors

    T Kamiya, H Ohta, H Hiramatsu, K Hayashi, K Nomura, S Matsuishi, K Ueda, M Hirano, H Hosono

    MICROELECTRONIC ENGINEERING   73-4   620 - 626   2004.6

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  • UV-VUV laser induced phenomena in SiO2 glass

    K Kajihara, Y Ikuta, M Oto, M Hirano, L Skuja, H Hosono

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   218   323 - 331   2004.6

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  • UV-VUV laser induced phenomena in SiO2 glass

    K Kajihara, Y Ikuta, M Oto, M Hirano, L Skuja, H Hosono

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   218   323 - 331   2004.6

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  • Nano-fabrication of optical devices in transparent dielectrics: volume gratings in SiO2 and DFB color center laser in LiF

    KI Kawamura, D Takamizu, T Kurobori, T Kamiya, M Hirano, H Hosono

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   218   332 - 336   2004.6

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  • Growth mechanism for single-crystalline thin film of InGaO3(ZnO)(5) by reactive solid-phase epitaxy

    K Nomura, H Ohta, K Ueda, T Kamiya, M Orita, M Hirano, T Suzuki, C Honjyo, Y Ikuhara, H Hosono

    JOURNAL OF APPLIED PHYSICS   95 ( 10 )   5532 - 5539   2004.5

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  • All oxide transparent MISFET using high-k dielectrics gates

    K Nomura, H Ohta, HA Masahiro, K Ueda, T Kamiya, M Hirano, H Hosono

    MICROELECTRONIC ENGINEERING   72 ( 1-4 )   294 - 298   2004.4

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  • Field emission of electron anions clathrated in subnanometer-sized cages in [Ca24Al28O64](4+)(4e(-))

    Y Toda, S Matsuishi, K Hayashi, K Ueda, T Kamiya, M Hirano, H Hosono

    ADVANCED MATERIALS   16 ( 8 )   685 - +   2004.4

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  • Single-atomic-layered quantum wells built in wide-gap semiconductors LnCuOCh (Ln=lanthanide, Ch=chalcogen)

    K Ueda, H Hiramatsu, H Ohta, M Hirano, T Kamiya, H Hosono

    PHYSICAL REVIEW B   69 ( 15 )   155305   2004.4

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  • Thermoelectric properties of layered oxyselenides La1-xSrxCuOSe (x=0 to 0.2)

    M Yasukawa, K Ueda, H Hosono

    JOURNAL OF APPLIED PHYSICS   95 ( 7 )   3594 - 3597   2004.4

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  • 27pXS-5 Excitonic optical absorption in layered oxychalcogenides with natural MQW structure

    Ueda K., Hiramatsu H., Ohta, Hirano M., Kamiya T., Hosono H.

    Meeting abstracts of the Physical Society of Japan   59 ( 1 )   726 - 726   2004.3

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  • Li-doped NiO epitaxial thin film with atomically flat surface

    T Kamiya, H Ohta, M Kamiya, K Nomura, K Ueda, M Hirano, H Hosono

    JOURNAL OF MATERIALS RESEARCH   19 ( 3 )   913 - 920   2004.3

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  • Mechanism for heteroepitaxial growth of transparent P-type semiconductor: LaCuOS by reactive solid-phase epitaxy

    H Hiramatsu, H Ohta, T Suzuki, C Honjo, Y Ikuhara, K Ueda, T Kamiya, M Hirano, H Hosono

    CRYSTAL GROWTH & DESIGN   4 ( 2 )   301 - 307   2004.3

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  • Transparent organic thin-film transistor with a laterally grown non-planar phthalocyanine channel

    H Ohta, T Kambayashi, K Nomura, M Hirano, K Ishikawa, H Takezoe, H Hosono

    ADVANCED MATERIALS   16 ( 4 )   312 - +   2004.2

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  • Third-order optical nonlinearity originating from room-temperature exciton in layered compounds LaCuOS and LaCuOSe

    H Kamioka, H Hiramatsu, H Ohta, M Hirano, K Ueda, T Kamiya, H Hosono

    APPLIED PHYSICS LETTERS   84 ( 6 )   879 - 881   2004.2

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  • Femtosecond-laser-encoded distributed-feedback color center laser in lithium fluoride single crystals

    K Kawamura, M Hirano, T Kurobori, D Takamizu, T Kamiya, H Hosono

    APPLIED PHYSICS LETTERS   84 ( 3 )   311 - 313   2004.1

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  • Formation and desorption of oxygen species in nanoporous crystal 12CaO center dot 7AI(2)O(3)

    SW Yang, JN Kondo, K Hayashi, M Hirano, K Domen, H Hosono

    CHEMISTRY OF MATERIALS   16 ( 1 )   104 - 110   2004.1

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  • Deep-UV resistivity of fluorine doped silica glass

    M. OTO, S, KIKUGAWA M, HIRANO H, HOSONO

    Proc.XX International Congress   O-14-002-1~5   2004

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  • Surface dissolution and diffusion of oxygen molecules in SiO2 glass

    Koichi Kajihara, Taisuke Miura, Hayato Kamioka, Masahiro Hirano, Linards Skuja, Hideo Hosono

    Journal of the Ceramic Society of Japan   112 ( 1310 )   559 - 562   2004

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    Language:English   Publisher:Ceramic Society of Japan  

    DOI: 10.2109/jcersj.112.559

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  • Solubility and Diffusion Coefficient of Oxygen Molecules in SiO_2_ Glass Measured by Photoluminescence,

    K. KAJIHARA, H, KAMIOKA M, HIRANO T, MIURA L, SKUJA H, HOSONO

    Proc. of 20th Int.Cong. Glass   2004

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  • Urbach absorption edge of silica: reduction of glassy disorder by ・Vorine doping

    L. SKUJA, K, KAJIHARA, Y, IKUTA M, HIRANO H, HOSONO

    J. Non-Cry. Sol.   345/346   328 - 331   2004

  • Formation of oxygen radicals in 12CaO center dot 7Al(2)O(3): instability of extraframework oxide ions and uptake of oxygen gas

    Katsuro Hayashi, Satoru Matsuishi, Masahiro Hirano, Hideo Hosono

    J. Phys. Chem. B   108 ( 26 )   8920 - 8925   2004

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  • 自然ナノ構造を利用した新機能開拓―安定なエレクトライドの合成と冷電子源としての応用―

    神谷利夫, 戸田喜丈, 細野秀雄

    ファインケミカル   33 ( 8 )   22 - 35   2004

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  • 一枚の写真:セメントからつくる電界電子放射発表デバイス

    細野秀雄, 神谷利夫

    O plus E   26 ( 8 )   367 - 370   2004

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  • Periodic Nanostructures with Interfering Femtosecond Lasers

    M. HIRANO, K. KAWAMURA, H, KAMIOKA T, MIURA H, HOSONO

    Encyclopedia of Nanoscience and Nanotechnology   8   457 - 468   2004

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  • Synthesis of single-phase layered oxychalcogenide La2CdO2Se2: crystal structure, optical and electrical properties

    H Hiramatsu, K Ueda, T Kamiya, H Ohta, M Hirano, H Hosono

    JOURNAL OF MATERIALS CHEMISTRY   14 ( 19 )   2946 - 2950   2004

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  • High-Quality Epitaxial Film Growth of Trasparent Oxide Semiconductors

    H. OHTA, K, NOMURA H, HIRAMATSU T, SUZUKI K, UEDA T, KAMIYA M, HIRANO Y, IKUHARA H, HOSONO

    J. Ceram.Soc.Jap.   112 ( S )   S602-S609   2004

  • Transparent Oxide Optoelectronics

    H. OHTA, H, HOSONO

    Materia Today   June   2004

  • Electrical and Photonic Functions in Transparent Oxide Semiconductors: Utilization of Built-in Nanostructure

    H. HOSONO

    MRS Symposium Proceedings   76 ( v1.1 )   1 - 12   2004

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  • Carrier transport of extended and localized states in InGaO_3_(ZnO)_5_

    K. NOMURA, H. OHTA, K, UEDA T, KAMIYA M, HIRANO H, HOSONO

    Mat. Res. Soc. Symp. Proc.   811   E2.9.1-6   2004

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  • Two-Dimensional Electronic Structures in Layered Oxychalcogenide Semiconductors LaCuOCh (Ch=S, Se, Te) and La_2_CdO_2_Se_2_

    T. KAMIYA, K, UEDA H, HIRAMATSU, H, OHTA M, HIRANO H, HOSONO

    Mat. Res. Soc. Symp. Proc.   811   E4.10.1-6   2004

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  • Persistent Electronic Conduction in 12CaO.7Al_2_O_3_ Thin Films Produced by Ar Ion Implantation: Selective Kick-Out Effect Leads to Electride Thin Films

    M. MIYAKAWA, K. HAYASHI, Y. TODA T, KAMIYA M, HIRANO H, HOSONO

    Mat. Res. Soc. Symp. Proc.   811   E2.7.1-5   2004

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  • 電子がアニオンとして働くエレクトライド

    細野秀雄, 松石

    現代化学   395   27 - 33   2004

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  • 一枚の写真:塩の結晶にフォトンでDFBレーザーを書き込む

    細野秀雄, 河村賢一, 平野正浩, 黒堀利夫

    O plus E   ( 3月号 )   1 - 2   2004

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  • New Transparent Conductive Oxides

    H.Hosono

    Proc. 3rd World Conference on Photovoltaic Energy Conversion   B10.I1   1 - 5   2004

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  • Correlation between oxygen-deficient center formation and volume compaction in synthetic SiO_2_ glass upon ArF or F_2_ excimer-laser irradiation

    Y. IKUTA, K, KAJIHARA M, HIRANO H, HOSONO

    Appl. Opt.,   43 ( 11 )   2332 - 2336   2004

  • Built-in nanostructures in transparent oxides for novel photonic and electronic functions materials

    H Hosono

    INTERNATIONAL JOURNAL OF APPLIED CERAMIC TECHNOLOGY   1 ( 2 )   106 - 118   2004

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  • 現代の石器材料を創る;ERATO細野透明電子活性プロジェクト

    細野秀雄

    未来材料   4   48 - 49   2004

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  • Role of Mobile Interstitial Oxygen Atoms in Defect Processes in Oxides: Interconversion between Oxygen-Associated Defects in SiO_2_ Glass

    Koichi Kajihara Linards, Skuja Masahiro Hirano, Hideo Hosono

    Physical Review Letters   92 ( 1 )   015504-1   2004

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  • 東京工業大学材料科学COEの挑戦

    細野秀雄

    セラミックス   39   6 - 9   2004

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  • 共沈法による層状ペロブスカイトBa_n+1_Sn_n_O_3n+1_の合成と熱電特性

    池内薫, 国吉貞行, 西村豊和, 安川雅啓, 河野敏夫, 植田和茂, 細野秀雄

    粉末および粉末冶金   51   875   2004

  • SURFACE PROPERTIES OF FLOAT GLASS

    S. TAKEDA, H, HOSONO

    Proc.XX International Congress   O-09-002-1~5   2004

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  • Anomalously efficient creation of stable color centers in wet silica glass by high-dose fluorine-excimer laser irradiation

    L. SKUJA, K, KAJIHARA M, HIRANO H, HOSONO

    Proc.XX International Congress   O-14-052-1~5   2004

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  • Coordination shell structure around optically active ions and defects in silica glass

    H. HOSONO

    Proc. XX International Congress   O-07-011-1~5   2004

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  • Deep-UV resistivity of fluorine doped silica glass

    M. OTO, S, KIKUGAWA M, HIRANO H, HOSONO

    Proc.XX International Congress   O-14-002-1~5   2004

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  • Exploration of Novel Functions in Transparent Oxides Based on Built-in Nanostructures

    HIRANO Masahiro, HOSONO Hideo

    X-RAYS   46 ( 1 )   48 - 52   2004

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    Language:Japanese   Publisher:The Crystallographic Society of Japan  

    Realization of novel functions in transparent oxides utilizing intrinsic nanostructures in their crystal structures are discussed by taking layered compounds, InGaO3 (ZnO) m and LnCuOS/Se as examples. The layered structure forms"natural superlattice"or"multi-quantum well", providing distinct features due to the electron confinement to the nano-sized layers including efficient blue emission and large nonlinear optical susceptibility associated with"room temperature exciton"and degenerated p-type conduction by"modulation doping". These features allow for realizing emerging devices such as all optical switches and high mobility transparent field effect transistor.

    DOI: 10.5940/jcrsj.46.48

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    Other Link: https://jlc.jst.go.jp/DN/JALC/00237655271?from=CiNii

  • Periodic Nanostructures with Interfering Femtosecond Lasers

    M. HIRANO, K. KAWAMURA, H, KAMIOKA T, MIURA H, HOSONO

    Encyclopedia of Nanoscience and Nanotechnology   8   457 - 468   2004

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  • Solubility and Diffusion Coefficient of Oxygen Molecules in SiO_2_ Glass Measured by Photoluminescence,

    K. KAJIHARA, H, KAMIOKA M, HIRANO T, MIURA L, SKUJA H, HOSONO

    Proc. of 20th Int.Cong. Glass   2004

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  • Urbach absorption edge of silica: reduction of glassy disorder by ・Vorine doping

    L. SKUJA, K, KAJIHARA, Y, IKUTA M, HIRANO H, HOSONO

    J. Non-Cry. Sol.   345/346   328 - 331   2004

  • Formation of oxygen radicals in 12CaO center dot 7Al(2)O(3): instability of extraframework oxide ions and uptake of oxygen gas

    Katsuro Hayashi, Satoru Matsuishi, Masahiro Hirano, Hideo Hosono

    J. Phys. Chem. B   108 ( 26 )   8920 - 8925   2004

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  • Built-in Nanostructures in Transparent Oxides for Novel Photonic and Electronic functions Materials

    H. HOSONO

    Int. J. Appl.Ceram.Technol.   1 ( 2 )   106 - 118   2004

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  • High-Quality Epitaxial Film Growth of Trasparent Oxide Semiconductors

    H. OHTA, K, NOMURA H, HIRAMATSU T, SUZUKI K, UEDA T, KAMIYA M, HIRANO Y, IKUHARA H, HOSONO

    J. Ceram.Soc.Jap.   112 ( S )   S602-S609   2004

  • Transparent Oxide Optoelectronics

    H. OHTA, H, HOSONO

    Materia Today   June   2004

  • Electrical and Photonic Functions in Transparent Oxide Semiconductors: Utilization of Built-in Nanostructure

    H. HOSONO

    MRS Symposium Proceedings   76 ( v1.1 )   1 - 12   2004

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  • Carrier transport of extended and localized states in InGaO_3_(ZnO)_5_

    K. NOMURA, H. OHTA, K, UEDA T, KAMIYA M, HIRANO H, HOSONO

    Mat. Res. Soc. Symp. Proc.   811   E2.9.1-6   2004

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  • Two-Dimensional Electronic Structures in Layered Oxychalcogenide Semiconductors LaCuOCh (Ch=S, Se, Te) and La_2_CdO_2_Se_2_

    T. KAMIYA, K, UEDA H, HIRAMATSU, H, OHTA M, HIRANO H, HOSONO

    Mat. Res. Soc. Symp. Proc.   811   E4.10.1-6   2004

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  • Persistent Electronic Conduction in 12CaO.7Al_2_O_3_ Thin Films Produced by Ar Ion Implantation: Selective Kick-Out Effect Leads to Electride Thin Films

    M. MIYAKAWA, K. HAYASHI, Y. TODA T, KAMIYA M, HIRANO H, HOSONO

    Mat. Res. Soc. Symp. Proc.   811   E2.7.1-5   2004

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  • Role of Mobile Interstitial Oxygen Atoms in Defect Processes in Oxides: Interconversion between Oxygen-Associated Defects in SiO_2_ Glass

    Koichi Kajihara Linards, Skuja Masahiro Hirano, Hideo Hosono

    Physical Review Letters   92 ( 1 )   015504-1   2004

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  • New Transparent Conductive Oxides

    H.Hosono

    Proc. 3rd World Conference on Photovoltaic Energy Conversion   B10.I1   1 - 5   2004

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  • Correlation between oxygen-deficient center formation and volume compaction in synthetic SiO_2_ glass upon ArF or F_2_ excimer-laser irradiation

    Y. IKUTA, K, KAJIHARA M, HIRANO H, HOSONO

    Appl. Opt.,   43 ( 11 )   2332 - 2336   2004

  • 高移動度(>10cm^2^(Vs)^-1^)を有するアモルファス酸化物半導体と薄膜トランジスタの室温形成

    神谷利夫, 野村研二, 細野秀雄

    第31回アモルファス物質の物性と応用セミナ―テキスト   1   2004

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  • SURFACE PROPERTIES OF FLOAT GLASS

    S. TAKEDA, H, HOSONO

    Proc.XX International Congress   O-09-002-1~5   2004

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  • Anomalously efficient creation of stable color centers in wet silica glass by high-dose fluorine-excimer laser irradiation

    L. SKUJA, K, KAJIHARA M, HIRANO H, HOSONO

    Proc.XX International Congress   O-14-052-1~5   2004

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  • Coordination shell structure around optically active ions and defects in silica glass

    H. HOSONO

    Proc. XX International Congress   O-07-011-1~5   2004

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  • Wide gap p-type degenerate semiconductor: Mg-doped LaCuOSe

    Hidenori Hiramatsu, Kazushige Ueda, Hiromichi Ohta, Masahiro Hirano, Toshio Kamiya, Hideo Hosono

    Thin Solid Films   445 ( 2 )   304 - 308   2003.12

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  • Thin film fabrication of nano-porous 12CaO center dot 7Al(2)O(3) crystal and its conversion into transparent conductive films by light illumination

    Y Toda, M Miyakawa, K Hayashi, T Kamiya, M Hirano, H Hosono

    THIN SOLID FILMS   445 ( 2 )   309 - 312   2003.12

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  • Frontier of transparent oxide semiconductors

    H Ohta, K Nomura, H Hiramatsu, K Ueda, T Kamiya, M Hirano, H Hosono

    SOLID-STATE ELECTRONICS   47 ( 12 )   2261 - 2267   2003.12

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  • Hopping and optical absorption of electrons in nano-porous crystal 12CaO center dot 7Al(2)O(3)

    PV Sushko, AL Shluger, K Hayashi, M Hirano, H Hosono

    THIN SOLID FILMS   445 ( 2 )   161 - 167   2003.12

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  • Observation of carrier dynamics in CdO thin films by excitation with femtosecond laser pulse

    K Kawamura, K Maekawa, H Yanagi, M Hirano, H Hosono

    THIN SOLID FILMS   445 ( 2 )   182 - 185   2003.12

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  • Hopping and optical absorption of electrons in nano-porous crystal 12CaO center dot 7Al(2)O(3)

    PV Sushko, AL Shluger, K Hayashi, M Hirano, H Hosono

    THIN SOLID FILMS   445 ( 2 )   161 - 167   2003.12

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  • Wide gap p-type degenerate semiconductor: Mg-doped LaCuOSe

    H Hiramatsu, K Ueda, H Ohta, M Hirano, T Kamiya, H Hosono

    THIN SOLID FILMS   445 ( 2 )   304 - 308   2003.12

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  • Non-vacuum and PLD growth of next generation TCO materials

    D Ginley, B Roy, A Ode, C Warmsingh, Y Yoshida, P Parilla, C Teplin, T Kaydanova, A Miedaner, C Curtis, A Martinson, T Coutts, D Readey, H Hosono, J Perkins

    THIN SOLID FILMS   445 ( 2 )   193 - 198   2003.12

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  • Thin film fabrication of nano-porous 12CaO center dot 7Al(2)O(3) crystal and its conversion into transparent conductive films by light illumination

    Y Toda, M Miyakawa, K Hayashi, T Kamiya, M Hirano, H Hosono

    THIN SOLID FILMS   445 ( 2 )   309 - 312   2003.12

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  • UV-detector based on pn-heteroj unction diode composed of transparent oxide semiconductors, p-NiO/n-ZnO

    H Ohta, M Kamiya, T Kamaiya, M Hirano, H Hosono

    THIN SOLID FILMS   445 ( 2 )   317 - 321   2003.12

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  • Electron transport in InGaO3(ZnO)(m) (m = integer) studied using single-crystalline thin films and transparent MISFETs

    K Nomura, H Ohta, K Ueda, T Kamiya, M Hirano, H Hosono

    THIN SOLID FILMS   445 ( 2 )   322 - 326   2003.12

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  • Intrinsic excitonic photoluminescence and band-gap engineering of wide-gap p-type oxychalcogenide epitaxial films of LnCuOCh (Ln=La, Pr, and Nd; Ch=S or Se) semiconductor alloys

    H Hiramatsu, K Ueda, K Takafuji, H Ohta, M Hirano, T Kamiya, H Hosono

    JOURNAL OF APPLIED PHYSICS   94 ( 9 )   5805 - 5808   2003.11

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  • A p-type amorphous oxide semiconductor and room temperature fabrication of amorphous oxide p-n heterojunction diodes

    S Narushima, H Mizoguchi, K Shimizu, K Ueda, H Ohta, M Hirano, T Kamiya, H Hosono

    ADVANCED MATERIALS   15 ( 17 )   1409 - 1413   2003.9

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  • Electrical and optical properties and electronic structures of LnCuOS (Ln = La similar to Nd)

    K Ueda, K Takafuji, H Hiramatsu, H Ohta, T Kamiya, M Hirano, H Hosono

    CHEMISTRY OF MATERIALS   15 ( 19 )   3692 - 3695   2003.9

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  • Electrical and optical properties and electronic structures of LnCuOS (Ln = La similar to Nd)

    K Ueda, K Takafuji, H Hiramatsu, H Ohta, T Kamiya, M Hirano, H Hosono

    CHEMISTRY OF MATERIALS   15 ( 19 )   3692 - 3695   2003.9

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  • Third-order optical nonlinearity of transparent oxide semiconductors La CuOS-Se in UV region

    Kamioka H., Hiramatsu H., Ohta H., Ueda K., Kamiya T., Hirano M., Hosono H.

    Meeting abstracts of the Physical Society of Japan   58 ( 2 )   616 - 616   2003.8

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    Language:Japanese   Publisher:The Physical Society of Japan (JPS)  

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  • High-density electron anions in a nanoporous single crystal: [Ca24Al28O64]4+ (4e-)

    Satoru Matsuishi, Yoshitake Toda, Masashi Miyakawa, Katsuro Hayashi, Toshio Kamiya, Masahiro Hirano, Isao Tanaka, Hideo Hosono

    Science   301 ( 5633 )   626 - 629   2003.8

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  • Effect of F-2 laser power on defect formation in high-purity SiO2 glass

    K Kajihara, Y Ikuta, M Hirano, H Hosono

    JOURNAL OF NON-CRYSTALLINE SOLIDS   322 ( 1-3 )   73 - 77   2003.7

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  • Fabrication of highly conductive 12CaO center dot 7Al(2)O(3) thin films encaging hydride ions by proton implantation

    M Miyakawa, K Hayashi, M Hirano, Y Toda, T Kamiya, H Hosono

    ADVANCED MATERIALS   15 ( 13 )   1100 - +   2003.7

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  • Fabrication of highly conductive 12CaO center dot 7Al(2)O(3) thin films encaging hydride ions by proton implantation

    M Miyakawa, K Hayashi, M Hirano, Y Toda, T Kamiya, H Hosono

    ADVANCED MATERIALS   15 ( 13 )   1100 - +   2003.7

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  • Maximum incorporation of oxygen radicals, O- and O2-, into 12CaO·7Al2O3 with a nanoporous structure

    Katsuro Hayashi, Satoru Matsuishi, Naoto Ueda, Masahiro Hirano, Hideo Hosono

    Chemistry of Materials   15 ( 9 )   1851 - 1854   2003.5

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    DOI: 10.1021/cm020959g

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  • Maximum incorporation of oxygen radicals, O- and O-2(-), into 12CaO center dot 7Al(2)O(3) with a nanoporous structure

    K Hayashi, S Matsuishi, N Ueda, M Hirano, H Hosono

    CHEMISTRY OF MATERIALS   15 ( 9 )   1851 - 1854   2003.5

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  • Maximum incorporation of oxygen radicals, O- and O-2(-), into 12CaO center dot 7Al(2)O(3) with a nanoporous structure

    K Hayashi, S Matsuishi, N Ueda, M Hirano, H Hosono

    CHEMISTRY OF MATERIALS   15 ( 9 )   1851 - 1854   2003.5

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  • Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor

    K Nomura, H Ohta, K Ueda, T Kamiya, M Hirano, H Hosono

    SCIENCE   300 ( 5623 )   1269 - 1272   2003.5

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  • Maximum incorporation of oxygen radicals, O- and O-2(-), into 12CaO center dot 7Al(2)O(3) with a nanoporous structure

    K Hayashi, S Matsuishi, N Ueda, M Hirano, H Hosono

    CHEMISTRY OF MATERIALS   15 ( 9 )   1851 - 1854   2003.5

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  • High-intensity atomic oxygen radical anion emission mechanism from 12CaO center dot 7Al(2)O(3) crystal surface

    QX Li, H Hosono, M Hirano, K Hayashi, M Nishioka, H Kashiwagi, Y Torimoto, M Sadakata

    SURFACE SCIENCE   527 ( 1-3 )   100 - 112   2003.3

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  • High-intensity atomic oxygen radical anion emission mechanism from 12CaO center dot 7Al(2)O(3) crystal surface

    QX Li, H Hosono, M Hirano, K Hayashi, M Nishioka, H Kashiwagi, Y Torimoto, M Sadakata

    SURFACE SCIENCE   527 ( 1-3 )   100 - 112   2003.3

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  • Degenerate p-type conductivity in wide-gap LaCuOS1-xSex (x=0-1) epitaxial films

    H Hiramatsu, K Ueda, H Ohta, M Hirano, T Kamiya, H Hosono

    APPLIED PHYSICS LETTERS   82 ( 7 )   1048 - 1050   2003.2

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  • Degenerate p-type conductivity in wide-gap LaCuOS1-xSex (x=0-1) epitaxial films

    H Hiramatsu, K Ueda, H Ohta, M Hirano, T Kamiya, H Hosono

    APPLIED PHYSICS LETTERS   82 ( 7 )   1048 - 1050   2003.2

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  • Fabrication and characterization of heteroepitaxial p-n junction diode composed of wide-gap oxide semiconductors p-ZnRh2O4/n-ZnO

    H Ohta, H Mizoguchi, M Hirano, S Narushima, T Kamiya, H Hosono

    APPLIED PHYSICS LETTERS   82 ( 5 )   823 - 825   2003.2

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  • Preparation and crystal structure analysis of CeCuOS

    Kazushige Ueda, Kouhei Takafuji, Hideo Hosono

    Journal of Solid State Chemistry   170 ( 1 )   182 - 187   2003.1

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  • Preparation and crystal structure analysis of CeCuOS

    K Ueda, K Takafuji, H Hosono

    JOURNAL OF SOLID STATE CHEMISTRY   170 ( 1 )   182 - 187   2003.1

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  • Advances in silica-based glasses for UV and vacuum-UV laser optics

    L. Skuja, H. Hosono, M. Hirano, K. Kajihara

    Proc.SPIE Advanced optical materials   5122   2 - 15   2003

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  • ナノ構造を利用し光で典型的絶縁体を電子導電体に変える

    細野秀雄

    化学と工業   56   49 - 52   2003

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  • ナノ構造と活性アニオンを利用した現代の錬金術

    細野秀雄

    鉱山   56 ( 11 )   27   2003

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  • Atomic and electronic structures of Cu/alpha-Al2O3 interfaces prepared by pulsed-laser deposition

    Takeo Sasaki, Katsuyuki Matsunaga, Hiromichi Ohta, Hideo Hosono, Takahisa Yamamoto, Yuichi Ikuhara

    SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS   4 ( 6 )   575 - 584   2003

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  • High-Density Electron Anions in a Nanoporous Single Crystal: [Ca24Al28O64]4+(e-)4

    Satoru Matsuishi, yoshitake toda, masashi miyakawa, KATSURO HAYASHI, TOSHIO KAMIYA, Masahiro Hirano, Isao Tanaka, HIDEO HOSONO

    Science   301 ( 5633 )   626 - 629   2003

  • Photo-Induced Insulator-Semiconductor Transition in 12CaO・7Al2O3 (C12A7)

    Katsuro Hayashi, Satoru Matsuishi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    MSR Symposium Proceedings   747   247 - 256   2003

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  • 電子がアニオンとして振舞う室温で安定な結晶:無機エレクトライド

    細野秀雄

    東工大クロニクル   381   7 - 8   2003

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  • 活性イオンを包摂したナノポーラス結晶12CaO・7Al_2_O_3_の機能性―活性酸素、紫外線誘起電子伝導性のTG-MSによる研究―

    林克郎, 平野正浩, 細野秀雄

    マテリアルインテグレーション   16 ( 8 )   55 - 59   2003

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  • 21世紀COEプログラム:東京工業大学・わが大学が目指す21世紀のセラミックス「産業化を目指したナノ材料開拓と人材育成」

    細野秀雄

    Ceramic Data Book   31   29 - 31   2003

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  • Micro and nano-machining of transparent dielectrics by interfered two short laser pulses

    Masahiro Hirano, Ken-ichi Kawamura, Hideo Hosono

    SPIE   5061   89 - 95   2003

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  • HRTEMによるCu/α-Al_2_O_3_(0001)界面の原子構造解析

    佐々木健夫, 松永克志, 太田裕道, 細野秀雄, 山本剛久, 幾原雄一

    材料   52 ( 6 )   555 - 559   2003

  • Application of a Transparent Conductive Substrate with and Atomically Flat and Stepped Surface to Lateral Growth of an Organic Molecule: Vanadyl Phthalocyanine

    Hiromichi Ohta, Takuya Kambayashi Masahiro Hirano, Hajime, Hoshi Ken Ishikawa Hideo, Takezoe, Hidio Hosono

    Advanced Materials   15 ( 15 )   1258 - 1262   2003

  • コンピューターが視界から消える?-透明な電子回路の実現が射程距離に入った-

    細野秀雄

    ニュートン   23 ( 10月 )   102 - 107   2003

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  • 室温・空気中で安定なエレクトライドの合成に成功

    細野秀雄

    JSTニュース   88   6   2003

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  • Electron Localization and a Confined Electron Gas in Nanoporous Inorganic Electrides

    Peter V. Sushko Alexander L. Shluger, Katsuro, Hayashi Masahiro Hirano, Hideo Hosono

    Physical Review Letters   91 ( 12 )   126401-1~4   2003

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  • ナノポーラス結晶12CaO・7Al_2_O_3_による活性酸素イオン、水素陰イオンおよび電子の包接

    松石聡, 林克郎, 平野正浩, 細野秀雄

    ゼオライト   20 ( 3 )   121 - 124   2003

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  • 電子状態の理解はセラミックスの研究にどう役立つか:酸化物半導体のバンドラインナップを例として

    細野秀雄, 神谷利夫

    セラミックス   38   825 - 831   2003

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  • Fabrication of MISFET Exhibiting Normally-Off Characteristics Using a Single-Crystalline InGaO_3_(ZnO)_5_ Thin Film

    K. Nomura, H. Ohta, K, Ueda, T. Kamiya, M. Hirano, H. Hosono

    MRS Symposium proceedings   747   267   2003

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  • Heteroepitaxial Growth of a Wide Gap P-type Oxysulfide, LaCuO

    Hidenori Hiramatsu, Kazushige Ueda, Hiromichi Ohta Masahiro Hirano, Hideo Hosono

    MRS Symposium proceedings   747   359   2003

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  • 高性能透明トランジスタを実現~透明酸化物半導体InGaO_2_(ZnO)_5_膜を用いて~

    細野秀雄

    JSTニュース   81   8   2003

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  • 自然超格子構造を有する透明半導体―エピタキシャル成長と光・電子物性―

    平松秀典, 太田裕道, 植田和茂, 平野正浩, 細野秀雄

    月刊ディスプレイ   9 ( 5月号 )   78 - 83   2003

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  • High-Density Electron Anions in a Nanoporous Single Crystal: [Ca_24_Al_28_O_64_]^4+^(4e^-^)

    S.Matsuishi, Y.Toda, M.Miyakawa, K.Hayashi, K.Kamiya, M.Hirano, I.Tanaka, H.Hosono

    Science   301 ( 5633 )   626 - 629   2003

  • Simultaneous fabrication of laser-active colour centers and permanent microgratings in lithium fluoride by a single femtosecond pulse

    Toshio Kurobori, Ken-ichi Kawamura Masahiro Hirano, Hideo Hosono

    J. Phys.: Condens. Matter   15 ( 25 )   L399 - L405   2003

  • ガラスのような透明材料が半導体になる?

    細野秀雄

    SCHOTT INFO   13   27   2003

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  • Wide-Gap P-Type Conductive Properties in Layered Oxychalcogenides

    Kazushige Ueda, Kouhei Takafuji, Hidenori Hiramatsu, Hiromichi Ohta Masahiro Hirano, Hideo Hosono, Hiroshi Kawazoe

    MRS Symposium proceedings   747   223   2003

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  • X-ray Amorphous P-Type Conductive Oxide; ZnRh_2_O_4_

    Satoru Narushima, Hiroshi Mizoguchi Hiromichi Ohta Masahiro Hirano, Ken-ichi Shimizu Kazushige Ueda, Toshio Kamiya, Hideo Hosono

    MRS Symposium proceedings   747   235   2003

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  • Photo-Induced Insulator-Semiconductor Transition in 12CaO×7Al_2_O_3_(C12A7)

    Katsuro Hayashi Satoru Matsuishi Toshio Kamiya Masahiro Hirano, Hideo Hoaono

    MRS Symposium proceedings   747   247   2003

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  • Reactive Solid-Phase Epitaxy-A Novel Growth Method for Single-Crystalline Thin Films of Complex Oxides With Superlattice Structure

    H. Ohta, K. Nomura, H. Hiramatsu, T, Suzuki K. Ueda, M. Orita, M. Hirano, Y. Ikuhara, Hideo Hosono

    MRS Symposium proceedings   747   257   2003

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  • 透明酸化物のナノ構造制御と電子・光・イオン物性-細野透明電子活性プロジェクトの中間成果概要-

    平野正浩, 細野秀雄

    セラミックス   38   331 - 341   2003

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  • Electronic structure of oxygen dangling bond in glassy SiO_2_: the role of hyperconjugation

    T.Suzuki, L.Skuja, K.Kajihara, M.Hirano, T.Kamiya, H.Hosono

    Physical Review Letters   90   186404-1~4   2003

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  • ありふれた酸化物を高機能性材料に変える~ナノ構造と活性アニオンを利用したアプローチ~

    細野秀雄

    固体物理   38 ( 6 )   423 - 329   2003

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  • Micro and nano-machining of transparent dielectrics by interfered two short laser pulses

    Masahiro Hirano, Ken-ichi Kawamura, Hideo Hosono

    SPIE   5061   89 - 95   2003

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  • Photo-Induced Insulator-Semiconductor Transition in 12CaO・7Al2O3 (C12A7)

    Katsuro Hayashi, Satoru Matsuishi, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    MSR Symposium Proceedings   747   247 - 256   2003

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  • Advances in silica-based glasses for UV and vacuum-UV laser optics

    L. Skuja, H. Hosono, M. Hirano, K. Kajihara

    Proc.SPIE Advanced optical materials   5122   2 - 15   2003

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  • Insulation Ceramic Converted into Tranaparent Semiconductor

    Look Japan   48 ( 564 )   28 - 29   2003

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  • Single-Crystalline Films of the Homologous Series InGaO_3_(ZnO)_m_ Grown by Reactive Solid-Phase Epitaxy

    H.Ohta K.Nomura, M.Orita, M.Hirano, K.Ueda, T.Suzuki, Y.Ikuhara, H.Hosono

    Adv.Fanct.Mater.   13 ( 2 )   139 - 144   2003

  • 透明電子活性酸化物

    細野秀雄

    応用物理学会薄膜・表面物理分科会 NEWS LETTERS   117   12 - 19   2003

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  • 絶縁体のセラミックスが半導体に

    細野秀雄

    JST基礎研究最前線   1   2 - 3   2003

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  • Electron Localization and a Confined Electron Gas in Nanoporous Inorganic Electrides

    Peter V. Sushko Alexander L. Shluger, Katsuro, Hayashi Masahiro Hirano, Hideo Hosono

    Physical Review Letters   91 ( 12 )   126401-1~4   2003

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  • HRTEM characterization of atomic structures in Cu/α-Al2O3 (0001) interface

    Takeo Sasaki, Katsuyuki Matsunaga, Hiromichi Ohta, Hideo Hosono, Takahisa Yamamoto, Yuichi Ikuhara

    Zairyo/Journal of the Society of Materials Science, Japan   52 ( 6 )   555 - 559   2003

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    Language:Japanese   Publisher:Society of Materials Science Japan  

    DOI: 10.2472/jsms.52.555

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  • Application of a Transparent Conductive Substrate with and Atomically Flat and Stepped Surface to Lateral Growth of an Organic Molecule: Vanadyl Phthalocyanine

    Hiromichi Ohta, Takuya Kambayashi Masahiro Hirano, Hajime, Hoshi Ken Ishikawa Hideo, Takezoe, Hidio Hosono

    Advanced Materials   15 ( 15 )   1258 - 1262   2003

  • High-Density Electron Anions in a Nanoporous Single Crystal: [Ca_24_Al_28_O_64_]^4+^(4e^-^)

    S.Matsuishi, Y.Toda, M.Miyakawa, K.Hayashi, K.Kamiya, M.Hirano, I.Tanaka, H.Hosono

    Science   301 ( 5633 )   626 - 629   2003

  • Simultaneous fabrication of laser-active colour centers and permanent microgratings in lithium fluoride by a single femtosecond pulse

    Toshio Kurobori, Ken-ichi Kawamura Masahiro Hirano, Hideo Hosono

    J. Phys.: Condens. Matter   15 ( 25 )   L399 - L405   2003

  • Wide-Gap P-Type Conductive Properties in Layered Oxychalcogenides

    Kazushige Ueda, Kouhei Takafuji, Hidenori Hiramatsu, Hiromichi Ohta Masahiro Hirano, Hideo Hosono, Hiroshi Kawazoe

    MRS Symposium proceedings   747   223   2003

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  • X-ray Amorphous P-Type Conductive Oxide; ZnRh_2_O_4_

    Satoru Narushima, Hiroshi Mizoguchi Hiromichi Ohta Masahiro Hirano, Ken-ichi Shimizu Kazushige Ueda, Toshio Kamiya, Hideo Hosono

    MRS Symposium proceedings   747   235   2003

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  • Photo-Induced Insulator-Semiconductor Transition in 12CaO×7Al_2_O_3_(C12A7)

    Katsuro Hayashi Satoru Matsuishi Toshio Kamiya Masahiro Hirano, Hideo Hoaono

    MRS Symposium proceedings   747   247   2003

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  • Reactive Solid-Phase Epitaxy-A Novel Growth Method for Single-Crystalline Thin Films of Complex Oxides With Superlattice Structure

    H. Ohta, K. Nomura, H. Hiramatsu, T, Suzuki K. Ueda, M. Orita, M. Hirano, Y. Ikuhara, Hideo Hosono

    MRS Symposium proceedings   747   257   2003

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  • Fabrication of MISFET Exhibiting Normally-Off Characteristics Using a Single-Crystalline InGaO_3_(ZnO)_5_ Thin Film

    K. Nomura, H. Ohta, K, Ueda, T. Kamiya, M. Hirano, H. Hosono

    MRS Symposium proceedings   747   267   2003

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  • Heteroepitaxial Growth of a Wide Gap P-type Oxysulfide, LaCuO

    Hidenori Hiramatsu, Kazushige Ueda, Hiromichi Ohta Masahiro Hirano, Hideo Hosono

    MRS Symposium proceedings   747   359   2003

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  • Single-Crystalline Films of the Homologous Series InGaO_3_(ZnO)_m_ Grown by Reactive Solid-Phase Epitaxy

    H.Ohta K.Nomura, M.Orita, M.Hirano, K.Ueda, T.Suzuki, Y.Ikuhara, H.Hosono

    Adv.Fanct.Mater.   13 ( 2 )   139 - 144   2003

  • Electronic structure of oxygen dangling bond in glassy SiO_2_: the role of hyperconjugation

    T.Suzuki, L.Skuja, K.Kajihara, M.Hirano, T.Kamiya, H.Hosono

    Physical Review Letters   90   186404-1~4   2003

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  • Fabrication of transparent MISFET using InGaO3(ZnO)5 single crystalline thin film with normally insulating nature

    Kenji Nomura, Hiromichi Ohta, Kazushige Ueda, Toshio Kamiya, Masahiro Hirano, Hideo Hosono

    Mater. Res. Soc. Symp. Proc.   747   267   2003

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  • Transparent MISFETs using homologous compounds, RMO3(ZnO)m (R=In, Lu; M= In, Ga; m=integer) single crystalline thin films

    K. Nomura, H. Ohta, K, Ueda, T. Kamiya, M. Hirano, H. Hosono

    Thin Solid Films   445   322 - 326   2003

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  • Power dependence of defect formation in SiO2 glass by F-2 laser irradiation

    K Kajihara, Y Ikuta, M Hirano, H Hosono

    APPLIED PHYSICS LETTERS   81 ( 17 )   3164 - 3166   2002.10

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  • Light-induced conversion of an insulating refractory oxide into a persistent electronic conductor

    K Hayashi, S Matsuishi, T Kamiya, M Hirano, H Hosono

    NATURE   419 ( 6906 )   462 - 465   2002.10

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  • Electric field emission of high density O- ions from 12CaO center dot 7Al(2)O(3) engineered to incorporate oxygen radicals

    K Hayashi, M Hirano, QX Li, M Nishioka, M Sadakata, Y Torimoto, S Matsuishi, H Hosono

    ELECTROCHEMICAL AND SOLID STATE LETTERS   5 ( 9 )   J13 - J16   2002.9

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  • Encoding of holographic grating and periodic nano-structure by femtosecond laser pulse

    M Hirano, K Kawamura, H Hosono

    APPLIED SURFACE SCIENCE   197   688 - 698   2002.9

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  • Ion-beam doping of silver in amorphous As2S3 thin films

    T Suzuki, H Hosono

    JOURNAL OF APPLIED PHYSICS   92 ( 4 )   1821 - 1824   2002.8

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  • Frontier of transparent conductive oxide thin films

    H Hosono, H Ohta, M Orita, K Ueda, M Hirano

    VACUUM   66 ( 3-4 )   419 - 425   2002.8

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  • Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS

    H Hiramatsu, K Ueda, H Ohta, M Orita, M Hirano, H Hosono

    APPLIED PHYSICS LETTERS   81 ( 4 )   598 - 600   2002.7

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  • Absolute emission current density of O- from 12CaO center dot 7Al(2)O(3) crystal

    QX Li, K Hayashi, M Nishioka, H Kashiwagi, M Hirano, Y Torimoto, H Hosono, M Sadakata

    APPLIED PHYSICS LETTERS   80 ( 22 )   4259 - 4261   2002.6

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  • Formation of microstructure in SiO2 thin film by a femtosecond laser pulse

    K Kawamura, E Motomitsu, M Hirano, H Hosono

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   41 ( 6B )   4400 - 4403   2002.6

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  • Electrical conductivity control in transparent p-type (LaO)CuS thin films prepared by rf sputtering

    H Hiramatsu, M Orita, M Hirano, K Ueda, H Hosono

    JOURNAL OF APPLIED PHYSICS   91 ( 11 )   9177 - 9181   2002.6

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  • Fine-pitched microgratings encoded by interference of UV femtosecond laser pulses

    H Kamioka, H Miura, K Kawamura, M Hirano, H Hosono

    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY   2 ( 3-4 )   321 - 323   2002.6

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  • NbO2F: An oxyfluoride phase with wide band gap and electrochromic properties

    H Mizoguchi, M Orita, M Hirano, S Fujitsu, T Takeuchi, H Hosono

    APPLIED PHYSICS LETTERS   80 ( 25 )   4732 - 4734   2002.6

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  • Crystal structure of LaCuOS1-xSex oxychalcogenides

    Kazushige Ueda, Hideo Hosono

    Thin Solid Films   411 ( 1 )   115 - 118   2002.5

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  • Holographic writing of micro-gratings and nanostructures on amorphous SiO2 by near infrared femtosecond pulses

    H Hosono, K Kawamura, S Matsuishi, M Hirano

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   191   89 - 97   2002.5

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  • Crystal structure of LaCuOS1-xSex oxychalcogenides

    K Ueda, H Hosono

    THIN SOLID FILMS   411 ( 1 )   115 - 118   2002.5

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  • Effects of H-2 impregnation on excimer-laser-induced oxygen-deficient center formation in synthetic SiO2 glass

    Y Ikuta, K Kajihara, M Hirano, S Kikugawa, H Hosono

    APPLIED PHYSICS LETTERS   80 ( 21 )   3916 - 3918   2002.5

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  • Preparation of transparent p-type (La1-xSrxO)CuS thin films by r.f. sputtering technique

    H Hiramatsu, K Ueda, H Ohta, M Orita, M Hirano, H Hosono

    THIN SOLID FILMS   411 ( 1 )   125 - 128   2002.5

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  • Optical gaps of alkali borate and alkali fluoroborate glasses

    T Suzuki, M Hirano, H Hosono

    JOURNAL OF APPLIED PHYSICS   91 ( 7 )   4149 - 4153   2002.4

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  • Band gap engineering, band edge emission, and p-type conductivity in wide-gap LaCuOS1-xSex oxychalcogenides

    K Ueda, H Hosono

    JOURNAL OF APPLIED PHYSICS   91 ( 7 )   4768 - 4770   2002.4

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  • Photochemistry in phosphorus-doped silica glass by ArF excimer laser irradiation: Crucial effect of H-2 loading

    H Hosono, K Kajihara, M Hirano, M Oto

    JOURNAL OF APPLIED PHYSICS   91 ( 7 )   4121 - 4124   2002.4

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  • New adjustment technique for time coincidence of femtosecond laser pulses using third harmonic generation in air and its application to holograph encoding system

    K Kawamura, N Ito, N Sarukura, M Hirano, H Hosono

    REVIEW OF SCIENTIFIC INSTRUMENTS   73 ( 4 )   1711 - 1714   2002.4

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  • Surface morphology and crystal quality of low resistive indium tin oxide grown on yittria-stabilized zirconia

    H Ohta, M Orita, M Hirano, H Hosono

    JOURNAL OF APPLIED PHYSICS   91 ( 6 )   3547 - 3550   2002.3

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  • Electronic structure of Sr2Cu2ZnO2S2 layered oxysulfide with CuS layers

    H Hirose, K Ueda, H Kawazoe, H Hosono

    CHEMISTRY OF MATERIALS   14 ( 3 )   1037 - 1041   2002.3

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  • Electronic structure and optical properties of SrCu2O2

    H Ohta, M Orita, M Hirano, Yagi, I, K Ueda, H Hosono

    JOURNAL OF APPLIED PHYSICS   91 ( 5 )   3074 - 3078   2002.3

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  • ZnRh2O4: A p-type semiconducting oxide with a valence band composed of a low spin state of Rh3+ in a 4d(6) configuration

    H Mizoguchi, M Hirano, S Fujitsu, T Takeuchi, K Ueda, H Hosono

    APPLIED PHYSICS LETTERS   80 ( 7 )   1207 - 1209   2002.2

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  • Microporous crystal 12CaO center dot 7Al(2)O(3) encaging abundant O- radicals

    K Hayashi, M Hirano, S Matsuishi, H Hosono

    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY   124 ( 5 )   738 - 739   2002.2

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  • Microporous crystal 12CaO center dot 7Al(2)O(3) encaging abundant O- radicals

    K Hayashi, M Hirano, S Matsuishi, H Hosono

    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY   124 ( 5 )   738 - 739   2002.2

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  • Transparent conducting oxide, InSbO4 with random rutile structure

    N Kikuchi, H Hosono, H Kawazoe, O Tanegashima, Ota, I, Y Kimura

    VACUUM   65 ( 1 )   81 - 84   2002.2

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  • Epitaxial growth of transparent conductive oxides

    H Ohta, M Orita, M Hirano, K Ueda, H Hosono

    INTERNATIONAL JOURNAL OF MODERN PHYSICS B   16 ( 1-2 )   173 - 180   2002.1

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  • Reproducibility of O^-^ negative ion emission from C_12_A_7_ crystal surface

    Q.LI K.HAYASHI, M.NISHIOKA, H.KASHIWAGI, M.HIRANO, Y.TORIMOTO, H.HOSONO, M.SADAKATA

    Jpn.J.Appl.Phys.   41 ( 5A )   L530 - L532   2002

  • Microporous crystal 12CaO center dot 7Al(2)O(3) encaging abundant O- radicals

    Katsuro Hayashi, Masahiro Hirano, Satoru Matsuishi, Hideo Hosono

    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY   124 ( 5 )   738 - 739   2002

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  • 半導体セラミックス

    細野秀雄

    ジュニアサイエンティスト   17 ( 4 )   36 - 37   2002

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  • UV-induced effects in glassy silica: transformation of peroxy radicals to oxygen dangling bonds

    L Skuja, M Hirano, H Hosono, K Kajihara, A Silin

    GLASS SCIENCE AND TECHNOLOGY   75 ( C2 )   24 - 29   2002

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  • Transparent conductive amorphous oxides: Electron-transport properties and electronic structure

    S Narushima, M Orita, H Hosono

    GLASS SCIENCE AND TECHNOLOGY   75 ( C2 )   48 - 53   2002

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  • 透明導電膜の新展開II「第3章 p型透明酸化物半導体とpnヘテロ接合発光ダイオード」

    太田裕道, 細野秀雄

    エレクトロニクス材料・技術シリーズ, シーエムシー出版   41   2002

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  • ナノポーラス結晶12CaO・7Al_2_O_3_を舞台とした活性酸素のエンジニアリングとその応用

    細野秀雄, 林克郎, 松石聡, 平野正浩

    セラミックス   37   968   2002

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  • 深紫外―真空紫外域光学材料としてのシリカガラス

    梶原浩一, 生田順亮, 大登正澄, 平野正浩, 細野秀雄

    ニューガラス   17 ( 4 )   31   2002

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  • P型アモルファス酸化物の発見とアモルファス酸化物PN接合の形成

    鳴島暁, 溝口拓, 折田政寛, 太田裕道, 平野正浩, 神谷利夫, 清水健一, 細野秀雄

    第35回アモルファス物質に関するセミナーテキスト   63   2002

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  • Complete water splitting by light irradiation of CaTiO_3_

    H.Mizoguchi K.Ueda, S.C.Moon, M.Orita, K.Kajihara, M.Hirano, H.Hosono

    Materials Research Bulletin   37   2401   2002

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  • Heteroepitaxial growth of single-phase zinc blende ZnS films on transparent substrates by pulsed laser deposition under H2S atmosphere

    H Hiramatsu, H Ohta, M Hirano, H Hosono

    SOLID STATE COMMUNICATIONS   124 ( 10-11 )   411 - 415   2002

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  • Structural alternation and defect formation in SiO_2_ glasses by F_2_ excimer laser irradiation

    K. Kajihara, Y. Ikuta, M. Hirano, H. Hosono

    Phys. Chem. Glasses   43 ( 3 )   137 - 40   2002

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  • Precipitation of nanometer-sized SnO_2_ crystals and Sn depth profile in heat-treated float glass

    S. TAKEDA, R. AKIYAMA, H, HOSONO

    J.Non-Cryst.Sol.   311 ( 3 )   273 - 280   2002

  • 超活性酸素イオンラジカルを大量に包接するセラミックス

    林克郎, 平野正浩, 細野秀雄

    セラミックスデータブック   30   186   2002

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  • 産業化を目指したナノ材料開拓と人材育成

    細野秀雄

    東工大クロニクル   371   3   2002

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  • チャープパルスによる非感光性透明物質の内部でのホログラムの書き込み

    河村賢一, 平野正浩, 細野秀雄

    O puls E   24   681   2002

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  • 深紫外用光ファイバーの開発

    大登正敬, 平野正浩, 細野秀雄

    レーザ加工学会誌   9   64   2002

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  • レーザと透明物質との相互作用

    細野秀雄

    レーザ加工学会誌   9   158   2002

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  • フェムト秒レーザーのシングルパルス干渉露光による無機材料の微細加工とその応用

    河村賢一, 平野正浩, 細野秀雄

    レーザー研究   30 ( 5 )   244 - 250   2002

  • フェムト秒レーザーのシングルパルス干渉による透明物質のナノ加工

    河村賢一, 平野正浩, 細野秀雄

    マイクロオプティックスニュース   20 ( 4 )   55   2002

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  • 透明電子活性材料 第31回薄膜・表面物理基礎講座「遷移金属酸化物薄膜の基礎と応用」テキスト

    細野秀雄

    応用物理学会   57   2002

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  • 細野透明電子活性プロジェクト中間成果報告集

    細野秀雄, 平野正浩編

    2002

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  • 研究者便り

    細野秀雄

    日産財団ニュース   27   8   2002

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  • Vacuum-Ultraviolet Transparency of Silica Glass and its Interaction with Vacuum-Ultraviolet Lasers

    KAJIHARA Koichi, HIRANO Masahiro, HOSONO Hideo

    X-RAYS   44 ( 3 )   182 - 188   2002

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    Language:Japanese   Publisher:The Crystallographic Society of Japan  

    Silica glass is a promising optical material in the deep-ultraviolet (DUV, -4.1-6.2 eV or 300-200 nm) to vacuum-ultraviolet (VUV, >-6.2 eV or <-200 nm) region since its optical band gap is located at-8 eV. For such a purpose, it is crucial to control its band-edge transparency and optical resistivity against the intense laser radiation of DUV-VUV excimer lasers (KrF ; 5.0 eV or 248 nm, ArF ; 6.4 eV or 193 nm, F2 ; 7.9 eV or 157 nm) . The present article reviews our recent studies on silica glasses irradiated with DUV-VUV excimer lasers, including several topics of the improvement of optical transparency by introducing Si-F terminals, the photostructural change of SiOH groups, the formation and annealing kinetics of laser-induced point-defects involving the role of hydrogen, and the application of F-doped glasses to DUV optical fibers.

    DOI: 10.5940/jcrsj.44.182

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  • ガラスの電気的性質

    細野秀雄

    セラミックスハンドブック、技報堂   2002

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  • 活性酸素を高濃度に含有するセラミックスの発見とその応用

    林克郎, 平野正浩, 細野秀雄

    エコエンジニアリング   7   5   2002

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  • Epotaxial Growth of Transparent Conductive Oxides

    H.Ohta M.Orita, M.Hirano, K.Ueda, H.Hosono

    Int.J.Mod.Phys.B   16   173   2002

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  • Novel Film Growth Technique for Single Crystalline InGaO_2_(ZnO)m (m=integer) Homologous Compound

    K.Nomura, H.Ohta, K.Ueda, M.Orita, M.Hirano, H.Hosono

    Thin Solid Films   411 ( 1 )   147 - 151   2002

  • Preparation of highly conductive, deep-uv transparent b-Ga_2_O_3_ thin films at low temperature

    M.Orita, H.Hiramatsu, H.Ohta, M.Hirano, H.Hosono

    Thin Solid Films   411 ( 1 )   134 - 139   2002

  • Fabrication and current injection UV-light emission from a transparent p-n heterojunction composed of p-SrCu_2_O_2_ and n-ZnO

    H. OHTA, M, ORITA M, HIRANO H, HOSONO

    Key Eng.Mater.   214~215   75   2002

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  • 化学・物理・電子工学が融合する21世紀の物質科学

    平尾一之, 細野秀雄, 川崎雅司

    現代化学   370   53   2002

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  • セラミックスのフロンティア

    細野秀雄

    学術月報   56   312   2002

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  • 活性酸素マイナスイオンを大量に包接するマイクロポーラス結晶

    細野秀雄

    ケミカルエンジニアリング   47   249   2002

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  • 新規透明導電性材料系 in プラズマ・イオンビーム応用とナノテクノロジー

    細野秀雄

    CMC   278   2002

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  • Enhacement of electrical conductivity in highly oriented WO_3_ thin films by ion implantation

    M.Miyakawa, K.Ueda, H.Hosono

    J.Appl.Phys.   92   2017   2002

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  • Electronic Structure and transport properties in transparent amorphous oxide semiconductors 2CdO-GeO_2_

    S.NARUSHIMA, M.ORITA, M.HIRANO, H.HOSONO

    Phys.Rev.B   66   035203-1   2002

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  • Writing of volume hologram in SiO_2_ glass by charped femtosercond laser pulse

    K.Kawamura, T.Kamiya, M.Hirano, H.Hosono

    Appl.Phys.Lett.   81 ( 6 )   1137 - 1139   2002

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  • Fabrication of all oxide transparent p-n homojunction using bipolar CuInO2 semiconducting oxide with delafossite structure

    H Yanagi, K Ueda, H Ohta, M Orita, M Hirano, H Hosono

    SOLID STATE COMMUNICATIONS   121 ( 1 )   15 - 17   2002

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  • Carrier generation in polycrystalline MgIn_2_O_4_ thin films by proton implantation

    M. MIYAKAWA, H, UN'NO K, UEDA H, KAWAZOE H, HOSONO N, MATSUNAMI

    Philo.Mag.B   82   1152   2002

  • Crystal growth of Ca_12_Al_14_O_33_ by the floating zone method

    S. WATAUCHI, I. TANAKA, K. HAYASHI M, HIRANO H, HOSONO

    J.Cryst.Growth   237   801   2002

  • Near UV-emitting diodes based on transparent P-N junctions composed of hetroepitaxiallly grown p-SrCu_2_O_2_ and n-ZnO

    H. HOSONO, H. OHTA, K. HAYASHI M, ORITA M. HIRANO

    J.Cryst.Growth   237   496   2002

  • Vacuum ultraviolet optical absorption band of non-bridging oxygen hole centers in SiO(2) glass

    H Hosono, K Kajihara, T Suzuki, Y Ikuta, L Skuja, M Hirano

    SOLID STATE COMMUNICATIONS   122 ( 3-4 )   117 - 120   2002

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  • Translucent ceramics of 12CaO · 7Al2O3 with microporous structure

    Katsuro Hayashi, Masahiro Hirano, Hideo Hosono

    Journal of Materials Research   17 ( 6 )   1244 - 1247   2002

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    Language:English   Publisher:Materials Research Society  

    DOI: 10.1557/JMR.2002.0185

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  • Reproducibility of O^-^ negative ion emission from C_12_A_7_ crystal surface

    Q.LI K.HAYASHI, M.NISHIOKA, H.KASHIWAGI, M.HIRANO, Y.TORIMOTO, H.HOSONO, M.SADAKATA

    Jpn.J.Appl.Phys.   41 ( 5A )   L530 - L532   2002

  • Diffusion and reaction of hydrogen in F_2_-laser-irradiated SiO_2_ grass

    K.Kajihara, L.Skuja, M.Hirano, H. Hosono

    Phys. Rev. Lett.   89   135507   2002

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  • The behavior of interstitial oxygen atoms induced by F_2_ laser irradiation of oxygen-rich glassy SiO_2_

    L. SKUJA, K, KAJIHARA T, KINOSHITA M, HIRANO H, HOSONO

    Nucl.INstr.Meth.B   191   127   2002

  • Carrier control in transparent semiconducting oxide thin films by ion implantation:MgIn_2_O_4_ and ZnO

    M. MIYAKAWA, K, UEDA H, HOSONO

    Nucl.Instr.Meth.B   191   173   2002

  • Carrier doping into MgIn_2_O_4_ epitaxial thin films by proton implantation

    M. MIYAKAWA R, NOSHIRO T, OGAWA K, UEDA H, KAWAZOE H, OHTA M, HIRANO H, HOSONO

    J.Appl.Phys.   91   2112   2002

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  • Preparation of highly conductive, deep-uv transparent b-Ga_2_O_3_ thin films at low temperature

    M.Orita, H.Hiramatsu, H.Ohta, M.Hirano, H.Hosono

    Thin Solid Films   411 ( 1 )   134 - 139   2002

  • Fabrication and current injection UV-light emission from a transparent p-n heterojunction composed of p-SrCu_2_O_2_ and n-ZnO

    H. OHTA, M, ORITA M, HIRANO H, HOSONO

    Key Eng.Mater.   214~215   75   2002

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  • Precipitation of nanometer-sized SnO_2_ crystals and Sn depth profile in heat-treated float glass

    S. TAKEDA, R. AKIYAMA, H, HOSONO

    J.Non-Cryst.Sol.   311 ( 3 )   273 - 280   2002

  • Complete water splitting by light irradiation of CaTiO_3_

    H.Mizoguchi K.Ueda, S.C.Moon, M.Orita, K.Kajihara, M.Hirano, H.Hosono

    Materials Research Bulletin   37   2401   2002

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  • Structural alternation and defect formation in SiO_2_ glasses by F_2_ excimer laser irradiation

    K. Kajihara, Y. Ikuta, M. Hirano, H. Hosono

    Phys. Chem. Glasses   43 ( 3 )   137 - 40   2002

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  • Microporous crystal 12CaO center dot 7Al(2)O(3) encaging abundant O- radicals

    Katsuro Hayashi, Masahiro Hirano, Satoru Matsuishi, Hideo Hosono

    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY   124 ( 5 )   738 - 739   2002

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  • Enhacement of electrical conductivity in highly oriented WO_3_ thin films by ion implantation

    M.Miyakawa, K.Ueda, H.Hosono

    J.Appl.Phys.   92   2017   2002

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  • Electronic Structure and transport properties in transparent amorphous oxide semiconductors 2CdO-GeO_2_

    S.NARUSHIMA, M.ORITA, M.HIRANO, H.HOSONO

    Phys.Rev.B   66   035203-1   2002

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  • Writing of volume hologram in SiO_2_ glass by charped femtosercond laser pulse

    K.Kawamura, T.Kamiya, M.Hirano, H.Hosono

    Appl.Phys.Lett.   81 ( 6 )   1137 - 1139   2002

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  • Epotaxial Growth of Transparent Conductive Oxides

    H.Ohta M.Orita, M.Hirano, K.Ueda, H.Hosono

    Int.J.Mod.Phys.B   16   173   2002

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  • Novel Film Growth Technique for Single Crystalline InGaO_2_(ZnO)m (m=integer) Homologous Compound

    K.Nomura, H.Ohta, K.Ueda, M.Orita, M.Hirano, H.Hosono

    Thin Solid Films   411 ( 1 )   147 - 151   2002

  • Carrier doping into MgIn_2_O_4_ epitaxial thin films by proton implantation

    M. MIYAKAWA R, NOSHIRO T, OGAWA K, UEDA H, KAWAZOE H, OHTA M, HIRANO H, HOSONO

    J.Appl.Phys.   91   2112   2002

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  • Carrier generation in polycrystalline MgIn_2_O_4_ thin films by proton implantation

    M. MIYAKAWA, H, UN'NO K, UEDA H, KAWAZOE H, HOSONO N, MATSUNAMI

    Philo.Mag.B   82   1152   2002

  • Crystal growth of Ca_12_Al_14_O_33_ by the floating zone method

    S. WATAUCHI, I. TANAKA, K. HAYASHI M, HIRANO H, HOSONO

    J.Cryst.Growth   237   801   2002

  • Near UV-emitting diodes based on transparent P-N junctions composed of hetroepitaxiallly grown p-SrCu_2_O_2_ and n-ZnO

    H. HOSONO, H. OHTA, K. HAYASHI M, ORITA M. HIRANO

    J.Cryst.Growth   237   496   2002

  • Carrier control in transparent semiconducting oxide thin films by ion implantation:MgIn_2_O_4_ and ZnO

    M. MIYAKAWA, K, UEDA H, HOSONO

    Nucl.Instr.Meth.B   191   173   2002

  • Diffusion and reaction of hydrogen in F_2_-laser-irradiated SiO_2_ grass

    K.Kajihara, L.Skuja, M.Hirano, H. Hosono

    Phys. Rev. Lett.   89   135507   2002

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  • The behavior of interstitial oxygen atoms induced by F_2_ laser irradiation of oxygen-rich glassy SiO_2_

    L. SKUJA, K, KAJIHARA T, KINOSHITA M, HIRANO H, HOSONO

    Nucl.INstr.Meth.B   191   127   2002

  • Fabrication of all oxide transparent p-n homojunction using bipolar CuInO2 semiconducting oxide with delafossite structure

    Hiroshi Yanagi, Kazushige Ueda, Hiromichi Ohta, Masahiro Orita, Masahiro Hirano, Hideo Hosono

    Solid State Communications   121 ( 1 )   15 - 17   2001.12

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  • Electronic structure of the transparent p-type semiconductor (LaO)CuS

    S Inoue, K Ueda, H Hosono, N Hamada

    PHYSICAL REVIEW B   64 ( 24 )   245211   2001.12

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  • Formation and decay of nonbridging oxygen hole centers in SiO2 glasses induced by F-2 laser irradiation: In situ observation using a pump and probe technique

    K Kajihara, L Skuja, M Hirano, H Hosono

    APPLIED PHYSICS LETTERS   79 ( 12 )   1757 - 1759   2001.9

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  • Optical fiber for deep ultraviolet light

    M Oto, S Kikugawa, N Sarukura, M Hirano, H Hosono

    IEEE PHOTONICS TECHNOLOGY LETTERS   13 ( 9 )   978 - 980   2001.9

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  • Pulsed laser deposition system for producing oxide thin films at high temperature

    M. Orita, H. Ohta, H. Hiramatsu, M. Hirano, S. Den, M. Sasaki, T. Katagiri, H. Mimura, H. Hosono

    Review of Scientific Instruments   72 ( 8 )   3340 - 3343   2001.8

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    Language:English  

    DOI: 10.1063/1.1384449

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  • Time-resolved gain-spectrum measurement scheme using two potential laser media and a streak camera

    T Kozeki, Y Suzuki, ZL Liu, N Sarukura, K Shimamura, T Fukuda, M Hirano, H Hosono

    REVIEW OF SCIENTIFIC INSTRUMENTS   72 ( 7 )   2875 - 2878   2001.7

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  • Ce3+:LiCaAlF6 for high-gain or high-peak-power amplification of ultraviolet femtosecond pulses and new potential ultraviolet gain medium: Ce3+:LiSr0.8Ca0.2AlF6

    Zhenlin Liu, Toshimasa Kozeki, Yuji Suzuki, Nobuhiko Sarukura, Kiyoshi Shimamura, Tsuguo Fukuda, Masahiro Hirano, Hideo Hosono

    IEEE Journal on Selected Topics in Quantum Electronics   7 ( 4 )   542 - 550   2001.7

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  • Amorphous transparent conductive oxide InGaO3(ZnO)(m) (m &lt;= 4): a Zn 4s conductor

    M Orita, H Ohta, M Hirano, S Narushima, H Hosono

    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES   81 ( 5 )   501 - 515   2001.5

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  • Chirped-pulse amplification of ultraviolet femtosecond pulses by use of Ce3+:LiCaAlF6 as a broadband, solid-state gain medium

    Zhenlin Liu, Toshimasa Kozeki, Yuji Suzuki, Nobuhiko Sarukura, Kiyoshi Shimamura, Tsuguo Fukuda, Masahiro Hirano, Hideo Hosono

    Optics Letters   26 ( 5 )   301 - 303   2001.3

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    Language:English   Publisher:Optical Society of America (OSA)  

    DOI: 10.1364/OL.26.000301

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  • Formation of nanometer-sized SnO2 colloids and change in Sn-depth concentration profile in float glass induced by oxygen diffusion from atmosphere at temperatures above T-g

    S Takeda, R Akiyama, H Hosono

    JOURNAL OF NON-CRYSTALLINE SOLIDS   281 ( 1-3 )   1 - 5   2001.3

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  • Laser-induced color centers in silica

    l.Skuja, H.Hosono, M.Hirano

    Proc. SPIE,   4347   115   2001

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  • Deep UV transparenty conductive b-Ga_2_O_3_ film

    M. ORITA, H, OHTA M, HIRANO H, HOSONO

    MRS Proc.   666   F2.9   2001

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  • Transparent p-type conducting LaCuOS layered Oxysulfide

    K. UEDA S. INOUE, S. HIROSE, H, KAWAZOE H, HOSONO

    MRS Proc.   666   F2.7   2001

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  • Transparent conducting Indium-Tin-Oxide thin film with extremely flatted surface

    H. OHRA M, ORITA M, HIRANO H, HOSONO

    MRS Proc.   666   F3.15   2001

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  • Interaction of F_2_ excimer laser pulses with hydroxyl groups in SiO_2_ glass: hydrogen bond formation and bleaching of vacuum ultraviolet absorption edge

    Kouichi Kajiwara, Tomoaki Ichimura, Yoshiaki Ikuta, Masahiro Hirano, Hiroshi Hosono

    J.Chem.Phys.   115 ( 20 )   9473 - 9476   2001

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  • Defect Formation in SiO_2_:P_2_O_5_ glasses by excimer laser irradiation: effects of H_2_-loading, Technical Digest of Bragg Gratings, Photosensitivity and Poling in Glass Waveguides

    Hideo Hosono, Kenichi Kawamura, Masahiro Hirano

    BTHA   2-4   2001

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  • Fabrication and Current Injection UV-light Emission from a Transparent p-n Heterojunction composed of p-SrCu_2_O_2_ and n-ZnO

    Hiromichi Ohta Masahiro Orita Masahiro Hirano, Hideo Hosono

    Key Engineering Materials   214-215,   75 - 80   2001

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  • フェムト秒レーザーの干渉による透明酸化物のナノ加工

    河村賢一, 平野正浩, 細野秀雄

    第54回レーザー加工学会論文集   16 - 24   2001

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  • Electrical Transport Properties and Electronic Structure of Transparent Conductive Oxides with Delafossite Structure

    H. Yanagi, K. Ueda, H. Hosono

    Transactions of the Materials Research Society of Japan   26 ( 3 )   997 - 1000   2001

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  • Physical disorder and optical properties in the vaccum ultraviolet region of amorphous SiO_2_

    H. HOSONO, Y, IKUTA T, KINOSHITA, K.KAJIHARA, M. HIRANO

    Phys.Rev.Lett.   87   175501   2001

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  • Bipolar electrical conductive Transparent Conductive Oxide; CuInO_2_

    H. YANAGI, K. UEDA H, OHTA M, HIRANO H, HOSONO

    MRS Proc.   666   F3.14   2001

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  • 新しい透明導電膜の成膜・材料技術と開発動向、応用展開

    細野秀雄, 折田政寛

    透明導電性酸化物薄膜のフロンティア   235 - 243   2001

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  • 「 たった2発のフェムト秒パルスでつくる周期的ナノ構造」一枚の写真

    細野秀雄, 河村賢一, 平野正浩

    O plus E   23   1009   2001

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  • Pulsed laser deposition ssystem for producing oxide thin films at high temperature

    Masahiro Orita, Hiromichi Ohta, Hidenori Hiramatsu Masahiro Hirano, Hideo Hosono

    Rev.Sci.Instr.   72 ( 8 )   3340 - 3343   2001

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  • Physical disorder and optical properties in vacuum ultraviolet region of amorphous SiO_2_

    Hideo Hosono, Yoshiaki Ikuta, Takeru Kinoshita, Masahiro Hirano

    Phys.Rev.Lett.   87   175501   2001

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  • フェムト秒パルスレーザーを用いた干渉露光ホログラム

    平野正浩, 河村賢一, 細野秀雄

    科学と工業   75 ( 1 )   23 - 29   2001

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    Language:Japanese   Publisher:大阪工研協会  

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  • アモルファスカルコゲナイドの伝導性制御:N型電導性物質の設計と実例

    細野秀雄

    セラミックス   36   88   2001

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  • 透明酸化物半導体をからなる近紫外発光ダイオードの実現

    太田裕道, 折田政寛, 平野正浩, 細野秀雄

    セラミックス   36   285   2001

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  • 透明酸化物半導体

    細野秀雄

    未来材料   1   26   2001

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  • 透明酸化物導電体から透明酸化物半導体へ

    細野秀雄

    ディスプレイ   ( 9月 )   2001

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  • フェムト秒レーザーのシングルパルス干渉露光法による透明酸化物へのマイクログレーティングの書き込み

    平野正浩, 河村賢一, 細野秀雄

    セラミックスデータブック   29   246   2001

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  • Room-temperature excitons in wide-gap layered-oxysulfide semiconductor: LaCuOS

    Kazushige Ueda, Shinichiro Inoue, Nobuhiko Sarukura Masahiro Hirano, Hideo Hosono

    Appl. Phys. Lett.   78 ( 16 )   2333 - 2335   2001

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  • Electrical and optical properties of layered oxysulfides with CuS layers: Sr-Cu-M-O-S system (M=Zn, Ga, In)

    Kazushige Ueda, Sakyo Hirose, Hiroshi Kawazoe, Hideo Hosono

    Chem. Mater.   13 ( 5 )   1880 - 1883   2001

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  • Periodic nano-structure array in crossed holographic gratings on silica glass by interferred two infrared femtosecond laser pulses

    Kenichi Kawamura, Nobuhiko Sarukura Masahiro Hirano, Hideo Hosono

    Appl.Phys.Lett.   79 ( 9 )   1228 - 1230   2001

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  • Ultraviolet femtosecond pulse amplification with high gain using solid-state, broad-band gain amplification Ce^3+^:LiCaAlF_6_

    Z. Liu, T. Kozeki, Y. Suzuki Nobuhiko Sarukura K. Shimamura T, FukudaA Masahiro Hirano, Hideo Hosono

    Jpn.J.Appl.Phys.   40 ( 4A )   2308 - 2309   2001

  • Frontier of Transparent Conductive Oxide Thin Films

    Hideo Hosono, Hiromichi Ohta Masahiro Orita, Kazushige Ueda, Masahiro Hirano

    Proc.6th Internantional Symposium on Sputtering & Plasma Processes,   172   2001

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  • Low electrically resistive transparent indium-tin-oxide epitaxial film on (001) surface of YSZ by pulsed laser deposition

    Hiromiti Ohta Masahiro Orita Masahiro Hirano, Hideo Hosono, Hiroshi Kawazoe, H. Tanji

    Mat. Res. Soc. Symp. Proc.   503   253   2001

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  • Damage behavior of SiO_2_ glass induced by 193 nm irradiation under a stimulated operating mode of lithography laser

    Yoshiaki Ikuta, S. Kikugawa, Masahiro Hirano, Hideo Hosono

    Proc. SPIE   4347   187   2001

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  • Optical transparency of SiO_2_ glass in vacuum ultraviolet and defect formation by F_2_ laser

    Hideo Hosono, Takeru Kinoshita, Yoshiaki Ikuta, K. Kajihara, M. HIRANO

    Proc. SPIE   4347   195   2001

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  • Defect generation in fused silica under high intensity laser interaction

    Linards Skuja Masahiro Hirano, Hideo Hosono

    Proc. SPIE   4347   155   2001

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  • Fabrication of non-erasable grating in SiO_2_ glass by two beam holographic method using infrared femtosecond laser pulses

    Kenichi Kawamura, Nobuhiko Sarukura Masahiro Hirano, Hideo Hosono

    Proc. SPIE   4347   198   2001

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  • Holographic encoding of fine-pitched micrograting structures in amorphous SiO_2_ thin films by a single femtosecond laser pulse

    Kenichi Kawamura, Nobuhiko Sarukura Masahiro Hirano, Hideo Hosono

    Appl.Phys.Lett.   78 ( 8 )   1038 - 1040   2001

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  • Fabrication and characterization of ultraviolet-emitting diodes composed of transparent p-n heterojunction, p-SrCu_2_O_2_ and n-ZnO

    Hiromichi Ohta Masahiro Orita Masahiro Hirano, Hideo Hosono

    J. Appl. Phys.   89 ( 10 )   5720 - 5725   2001

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  • Modification of sol-gel-derived amorphous Al_2_O_3_ thin films by F_2_ excimer laser irradiation at ambient temperature

    Sstoshi Takeda, Yoshiaki Ikuta, Masahiro Hirano, Hideo Hosono

    J.Mater.Res.   16   1003   2001

  • Photocatalitic TiO_2_ thin film deposited onto glass by DC magnetron sputtering

    Satoshi Takeda, S. Suzuki, H. Odaka, Hideo Hosono

    Solid Thin Films   392 ( 2 )   338 - 344   2001

  • Fabrication and Near-UV Emission of p-SrCu_2O_2/n-ZnO Heterojunction LED

    OHTA Hiromichi, ORITA Masahiro, HIRANO Masahiro, HOSONO Hideo

    J. Surf. Sci. Soc. Jpn.   22 ( 7 )   419 - 424   2001

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    Language:Japanese   Publisher:The Surface Science Society of Japan  

    Near-UV emitting diodes composed of wide band gap oxide semiconductors, p-SrCu2O2 and n-ZnO heterojunctions, were fabricated and their emission properties were investigated. Single crystal ITO thin films with very flat surfaces were grown using PLD on YSZ substrates, and ZnO films were heteroepitaxially grown on the ITO surfaces. p-SrCu2O2(112) was preferentially grown on ZnO(0001) at 350oC, while the preferential plane was changed into the (100) when the temperature was increased to 600oC. This device exhibited rectifying I-V characteristics inherent to p-n junction whose turn-on voltage was about 3 V. A relatively sharp electro-luminescence band centered at 382 nm was generated by applying the forward bias voltage larger than the turn-on voltage of 3 V. The red shift in the EL peak was noticed from that of photo-luminescence (377 nm), which was most likely due to the difference in the excited state density between the emission processes. The EL band is attributed to transition in ZnO, probably to that associated with electron-hole plasma. UV-LED performance characteristics such as threshold current and conversion efficiency was improved with higher SrCu2O2 deposition temperatures.

    DOI: 10.1380/jsssj.22.419

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  • Properties of a novel amorphous transparent conductive oxide, InGaO_3_(ZnO)m

    Masahiro Orita, Hiromiti Ohta Masahiro Hirano, Hideo Hosono, K. Morita, H. Tanji, Hiroshi Kawazoe

    Mat. Res. Soc. Symp. Proc.   503   291   2001

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  • Transparent conducting Indium-Tin-Oxide thin film with extremely flatted surface

    H. OHRA M, ORITA M, HIRANO H, HOSONO

    MRS Proc.   666   F3.15   2001

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  • Laser-induced color centers in silica

    l.Skuja, H.Hosono, M.Hirano

    Proc. SPIE,   4347   115   2001

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  • Bipolarigy in electrical conduction of transparent oxide semiconductor CuInO_2_ with delafossite structure

    Hiroshi Yanagi, Tomomi Hase Syuntaro, Ibuki, Kazushige Ueda, Hideo Hosono

    Appl. Phys. Lett.   78 ( 11 )   1583 - 1585   2001

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  • Epitaxial growth of transparent p-type conducting CuGaO_2_ thin films on sapphire (001) substrates by pulsed laser deposition

    Kazushige Ueda, Tomomi Hase, Hiroshi Yanagi, Hroshi Kawazoe, Hideo Hosono, Hromichi Ohta Masahiro Orita, Masahiro Hirano

    Appl. Phys.   89 ( 3 )   1790 - 1793   2001

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  • Photocatalitic TiO_2_ thin film deposited onto glass by DC magnetron sputtering

    Satoshi Takeda, S. Suzuki, H. Odaka, Hideo Hosono

    Solid Thin Films   392 ( 2 )   338 - 344   2001

  • Physical disorder and optical properties in the vaccum ultraviolet region of amorphous SiO_2_

    H. HOSONO, Y, IKUTA T, KINOSHITA, K.KAJIHARA, M. HIRANO

    Phys.Rev.Lett.   87   175501   2001

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  • Bipolar electrical conductive Transparent Conductive Oxide; CuInO_2_

    H. YANAGI, K. UEDA H, OHTA M, HIRANO H, HOSONO

    MRS Proc.   666   F3.14   2001

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  • Deep UV transparenty conductive b-Ga_2_O_3_ film

    M. ORITA, H, OHTA M, HIRANO H, HOSONO

    MRS Proc.   666   F2.9   2001

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  • Transparent p-type conducting LaCuOS layered Oxysulfide

    K. UEDA S. INOUE, S. HIROSE, H, KAWAZOE H, HOSONO

    MRS Proc.   666   F2.7   2001

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  • Frontier of Transparent Conductive Oxide Thin Films

    Hideo Hosono, Hiromichi Ohta Masahiro Orita, Kazushige Ueda, Masahiro Hirano

    Proc.6th Internantional Symposium on Sputtering & Plasma Processes,   172   2001

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  • Physical disorder and optical properties in vacuum ultraviolet region of amorphous SiO_2_

    Hideo Hosono, Yoshiaki Ikuta, Takeru Kinoshita, Masahiro Hirano

    Phys.Rev.Lett.   87   175501   2001

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  • Interaction of F_2_ excimer laser pulses with hydroxyl groups in SiO_2_ glass: hydrogen bond formation and bleaching of vacuum ultraviolet absorption edge

    Kouichi Kajiwara, Tomoaki Ichimura, Yoshiaki Ikuta, Masahiro Hirano, Hiroshi Hosono

    J.Chem.Phys.   115 ( 20 )   9473 - 9476   2001

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  • Defect Formation in SiO_2_:P_2_O_5_ glasses by excimer laser irradiation: effects of H_2_-loading, Technical Digest of Bragg Gratings, Photosensitivity and Poling in Glass Waveguides

    Hideo Hosono, Kenichi Kawamura, Masahiro Hirano

    BTHA   2-4   2001

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  • Fabrication and Current Injection UV-light Emission from a Transparent p-n Heterojunction composed of p-SrCu_2_O_2_ and n-ZnO

    Hiromichi Ohta Masahiro Orita Masahiro Hirano, Hideo Hosono

    Key Engineering Materials   214-215,   75 - 80   2001

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  • Electrical Transport Properties and Electronic Structure of Transparent Conductive Oxides with Delafossite Structure

    H. Yanagi, K. Ueda, H. Hosono

    Transactions of the Materials Research Society of Japan   26 ( 3 )   997 - 1000   2001

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  • Fabrication of non-erasable grating in SiO_2_ glass by two beam holographic method using infrared femtosecond laser pulses

    Kenichi Kawamura, Nobuhiko Sarukura Masahiro Hirano, Hideo Hosono

    Proc. SPIE   4347   198   2001

     More details

  • Room-temperature excitons in wide-gap layered-oxysulfide semiconductor: LaCuOS

    Kazushige Ueda, Shinichiro Inoue, Nobuhiko Sarukura Masahiro Hirano, Hideo Hosono

    Appl. Phys. Lett.   78 ( 16 )   2333 - 2335   2001

     More details

  • Electrical and optical properties of layered oxysulfides with CuS layers: Sr-Cu-M-O-S system (M=Zn, Ga, In)

    Kazushige Ueda, Sakyo Hirose, Hiroshi Kawazoe, Hideo Hosono

    Chem. Mater.   13 ( 5 )   1880 - 1883   2001

     More details

  • Periodic nano-structure array in crossed holographic gratings on silica glass by interferred two infrared femtosecond laser pulses

    Kenichi Kawamura, Nobuhiko Sarukura Masahiro Hirano, Hideo Hosono

    Appl.Phys.Lett.   79 ( 9 )   1228 - 1230   2001

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  • Ultraviolet femtosecond pulse amplification with high gain using solid-state, broad-band gain amplification Ce^3+^:LiCaAlF_6_

    Z. Liu, T. Kozeki, Y. Suzuki Nobuhiko Sarukura K. Shimamura T, FukudaA Masahiro Hirano, Hideo Hosono

    Jpn.J.Appl.Phys.   40 ( 4A )   2308 - 2309   2001

  • Properties of a novel amorphous transparent conductive oxide, InGaO_3_(ZnO)m

    Masahiro Orita, Hiromiti Ohta Masahiro Hirano, Hideo Hosono, K. Morita, H. Tanji, Hiroshi Kawazoe

    Mat. Res. Soc. Symp. Proc.   503   291   2001

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  • Low electrically resistive transparent indium-tin-oxide epitaxial film on (001) surface of YSZ by pulsed laser deposition

    Hiromiti Ohta Masahiro Orita Masahiro Hirano, Hideo Hosono, Hiroshi Kawazoe, H. Tanji

    Mat. Res. Soc. Symp. Proc.   503   253   2001

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  • Damage behavior of SiO_2_ glass induced by 193 nm irradiation under a stimulated operating mode of lithography laser

    Yoshiaki Ikuta, S. Kikugawa, Masahiro Hirano, Hideo Hosono

    Proc. SPIE   4347   187   2001

     More details

  • Optical transparency of SiO_2_ glass in vacuum ultraviolet and defect formation by F_2_ laser

    Hideo Hosono, Takeru Kinoshita, Yoshiaki Ikuta, K. Kajihara, M. HIRANO

    Proc. SPIE   4347   195   2001

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  • Defect generation in fused silica under high intensity laser interaction

    Linards Skuja Masahiro Hirano, Hideo Hosono

    Proc. SPIE   4347   155   2001

     More details

  • Bipolarigy in electrical conduction of transparent oxide semiconductor CuInO_2_ with delafossite structure

    Hiroshi Yanagi, Tomomi Hase Syuntaro, Ibuki, Kazushige Ueda, Hideo Hosono

    Appl. Phys. Lett.   78 ( 11 )   1583 - 1585   2001

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  • Epitaxial growth of transparent p-type conducting CuGaO_2_ thin films on sapphire (001) substrates by pulsed laser deposition

    Kazushige Ueda, Tomomi Hase, Hiroshi Yanagi, Hroshi Kawazoe, Hideo Hosono, Hromichi Ohta Masahiro Orita, Masahiro Hirano

    Appl. Phys.   89 ( 3 )   1790 - 1793   2001

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  • Holographic encoding of fine-pitched micrograting structures in amorphous SiO_2_ thin films by a single femtosecond laser pulse

    Kenichi Kawamura, Nobuhiko Sarukura Masahiro Hirano, Hideo Hosono

    Appl.Phys.Lett.   78 ( 8 )   1038 - 1040   2001

     More details

  • Fabrication and characterization of ultraviolet-emitting diodes composed of transparent p-n heterojunction, p-SrCu_2_O_2_ and n-ZnO

    Hiromichi Ohta Masahiro Orita Masahiro Hirano, Hideo Hosono

    J. Appl. Phys.   89 ( 10 )   5720 - 5725   2001

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  • Modification of sol-gel-derived amorphous Al_2_O_3_ thin films by F_2_ excimer laser irradiation at ambient temperature

    Sstoshi Takeda, Yoshiaki Ikuta, Masahiro Hirano, Hideo Hosono

    J.Mater.Res.   16   1003   2001

  • Crystal structure of metastable K-CeZrO4 phase possessing an ordered arrangement of Ce and Zr ions

    H Kishimoto, T Omata, S Otsuka-Yao-Matsuo, K Ueda, H Hosono, H Kawazoe

    JOURNAL OF ALLOYS AND COMPOUNDS   312 ( 1-2 )   94 - 103   2000.11

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  • Phonon scattering in electron transport phenomena of ITO films

    N Kikuchi, E Kusano, H Nanto, A Kinbara, H Hosono

    VACUUM   59 ( 2-3 )   492 - 499   2000.11

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  • Electronic transport and optical properties of proton-implanted amorphous 2CdO center dot GeO2 films

    S Narushima, H Hosono, J Jisun, T Yoko, K Shimakawa

    JOURNAL OF NON-CRYSTALLINE SOLIDS   274 ( 1-3 )   313 - 318   2000.9

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  • UV-emitting diode composed of transparent oxide semiconductors: p-SrCu2O2/n-ZnO

    H. Ohta, K. Kawamura, M. Orita, N. Sarukura, M. Hirano, H. Hosono

    Electronics Letters   36 ( 11 )   984 - 985   2000.5

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    Language:English   Publisher:Institution of Engineering and Technology  

    DOI: 10.1049/el:20000726

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  • p‐SrCu2O2/n‐ZnOワイドバンドギャップp‐n接合ダイオードの試作とEL発光

    太田裕道, 折田政寛, 河村賢一, 猿倉信彦, 平野正浩, 細野秀雄

    応用物理学関係連合講演会講演予稿集   47th ( 2 )   578   2000.3

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    Language:Japanese  

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  • Oxygen-related intrinsic defects in glassy SiO2: Interstitial ozone molecules

    L Skuja, M Hirano, H Hosono

    PHYSICAL REVIEW LETTERS   84 ( 2 )   302 - 305   2000.1

  • Fabrication of Surface Relief Grationgs on Transparent Dielectric Materials by Two-beam Holographic method using infrared femtosecond laser pulses

    K. Kawamura, T. Ogawa, N. Sarukura, M. Orita, M Hirano, H. Hosono

    Appl. Phys. B   71 ( 1 )   119 - 121   2000

  • Fabrication of UV-Light Emitting Diode Using Transparent Conductive Oxides

    H. Ohta, K. Kawamura, N. Sarukura, M. Hirano, H. Hosono

    Appl. Phys. Lett.   77 ( 4 )   475   2000

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  • 14Site-selective Study of the 1.8eV Luminescence Band in Glassy GeO_2_

    L. Skuja, H. Hosono, M. Mizuguchi, B. Guttler, A. Silin

    J. Luminescence   87/89   699 - 701   2000

  • Holographic Encoding of Permanent Gratings Embedded in Diamond by Two Beam Interference of a Single Femtosecond Near-infrared Laser Pulse

    K. Kawamura, N. Sarukura, M. Hirano, H. Hosono

    Jpn. J. Appl. Phys.(express letter)   39 ( 8A )   L767 - L769   2000

  • Highly Electrically Conductive Indium-Tin-Oxide Thin Films Epitaxially Grown on YSZ(100) by Pulsed Laser Deposition

    H. Ohta, M. Orita, M. Hirano, H. Tanji, H. Kawazoe, H. Hosono

    Appl. Phys. Lett.   76 ( 19 )   2740 - 2742   2000

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  • Optical Properties of SrMoO_3_ THin Films

    H. Mizoguchi, N. Katamura, K. Fukumi, T. Mihara, M. Nakamura, N. Kikuchi, H. Hosono, H. Kawazoe

    J.Appl. Phys.   87 ( 9,Pt.1 )   4617 - 4619   2000

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  • Transparent p-type semiconductor: LaCuOS layered oxysulfied

    K. Ueda, S. Inoue, S. Hirose, H. Kawazoe, H. Hosono

    Appl. Phys. Lett.   77 ( 17 )   2701 - 2703   2000

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  • Chemical Design and Application of Transparent P-type Conductive Oxides

    H. Kawazoe, H, Yanagi, K. Ueda, H. Hosono

    Bull. Mater. Res. Soc.   25 ( 8 )   28   2000

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  • ガラスの中の点欠陥

    細野秀雄, 平野正浩

    現代化学   354   26   2000

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  • 酸化物透明導電体:最近の進歩

    折田政寛, 細野秀雄

    日本応用磁気学会代115研究会資料   23 - 29   2000

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  • 一枚の写真:フェムト秒レーザーシングルパルスによる非感光性材料への回折格子の書き込み

    河村賢一, 細野秀雄

    22   964   2000

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  • Electron paramagnetic Centers in Donor-doped CaTiO_3_ Single Crystals

    K. Ueda, H. Kwazoe, H. Hosono

    Phys. Rev. B   61 ( 11 )   7440 - 7447   2000

  • Interaction of F_2_ excimer laser light pulses with SiO_2_ glasses: towards the 3rd generation of glassy SiO_2_

    H. Hosono, I. Ikuta

    Nucl. Instr. Meth. B   166   691 - 697   2000

  • Deep ultraviolet transparent electroconductive b-Ga_2_O_3_ thin films

    M. Orita, H. Ohta, M. Hirano, H. Hosono

    Appl.Phys.Lett.   77 ( 25 )   4166 - 4168   2000

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  • Degradatoin behavior and mechanism in SiO_2_ glasses by excimer lase: comparison between F_2_ and ArF laser

    Y. Ikuta, S. Kikugawa, M. Hirano, H. Hosono

    J.Vac.Sci.Tech.   18   2916   2000

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  • Heteroepitaxial Growth of In_2_O_3_ on YSZ(100)Single Crystal Surface

    M. Orita, H. Ohta, H. Tanji, H. Hosono, H. Kawazoe

    Mat.Res.Symp.Proc.   558   399   2000

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  • Chemical Design of Transparent P-type Conducting Oxides

    H.Yanagi, H.Kawazoe, A.Kudo, M.Yasukawa, H.Hosono

    J.Electroceram   4   407 - 414   2000

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  • Current injection emission from a transparent p-n junction composed of p-SrCu_2_O_2_/n-ZnO

    H.Ohta K.Kawamura, N.Sarukura, M.Orita, M.Hirano, H.Hosono

    Appl.Phys.Lett.   77 ( 4 )   475 - 477   2000

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  • Structure and Refractive Induces of Proton-Implanted LiNbO_3_

    V.V.Atuchin, H.Nagata, K.Kawamura, K.Higuma, J.Ichikawa, L.D.Pokrovsky, H.Takai, H.Hosono

    Jpn.J.Appl.Phys.   39 ( 5A )   2653 - 2656   2000

  • Defect formation and structural alternation in modified SiO_2_ glasses by irradiation with F2 laser or ArF excimer laser

    Y.Ikuta, S.Kikugawa, M.Hirano, H.Hosono

    J.Vac.Sci.Technol.B   18 ( 6 )   2891 - 2895   2000

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  • Transparent P-type Conductive Oxides, Design and Fabrication of p-n heterojunctions

    H.Kawazoe, H.Yanagi, K.Ueda, H.Hosono

    MRS Bull.   25   28   2000

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  • Electronic Structure and Optoelectronic Properties of Transparent P-Type Conducting CuAlO_2_

    H. Yanagi, S. Inoue, K. Ueda, H. Kawazoe, H. Hosono, N. Hamada

    J. Appl. Phys.   88 ( 7 )   4159 - 4163   2000

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  • What is an innovative glass?

    2000

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  • Preparation of n-type Conducting Transparent Thin films of AgInO_2_: Sn with Delafossite-type Structure by Pulsed Laser Deposition

    S. Ibuki, H, Yanagi, K. Ueda, H. Kawazoe, H. Hosono

    J. Appl. Phys.   88 ( 5 )   3067 - 3069   2000

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  • Chemical Design and Application of Transparent P-type Conductive Oxides

    H. Kawazoe, H, Yanagi, K. Ueda, H. Hosono

    Bull. Mater. Res. Soc.   25 ( 8 )   28   2000

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  • Fabrication of Surface Relief Grationgs on Transparent Dielectric Materials by Two-beam Holographic method using infrared femtosecond laser pulses

    K. Kawamura, T. Ogawa, N. Sarukura, M. Orita, M Hirano, H. Hosono

    Appl. Phys. B   71 ( 1 )   119 - 121   2000

  • Fabrication of UV-Light Emitting Diode Using Transparent Conductive Oxides

    H. Ohta, K. Kawamura, N. Sarukura, M. Hirano, H. Hosono

    Appl. Phys. Lett.   77 ( 4 )   475   2000

     More details

  • 14Site-selective Study of the 1.8eV Luminescence Band in Glassy GeO_2_

    L. Skuja, H. Hosono, M. Mizuguchi, B. Guttler, A. Silin

    J. Luminescence   87/89   699 - 701   2000

  • Holographic Encoding of Permanent Gratings Embedded in Diamond by Two Beam Interference of a Single Femtosecond Near-infrared Laser Pulse

    K. Kawamura, N. Sarukura, M. Hirano, H. Hosono

    Jpn. J. Appl. Phys.(express letter)   39 ( 8A )   L767 - L769   2000

  • Structure and Refractive Induces of Proton-Implanted LiNbO_3_

    V.V. Atuchin, H. Nagata, K. Kawamura, K. Higuma, J. Ichikawa, L, D. Pokrovsky, H. Takei, H. Hosono

    Jpn.J.Appl.Phys.   39 ( 5A )   2653 - 2656   2000

  • The Nature of the 4.8eV optical Absorption Band Induced by Vacuum-ultraviolet Irradiation of Glassy SiO_2_

    L. Skuja, M. Mizuguchi, H. Hosono, H. Kawazoe

    Nucl. Instr. Meth. B   166/167   711 - 715   2000

  • Materials Desing and Example of Long Lasting phosphorescent Galsses Utilizing Electron Trapped Centers

    T. Kinoshita, H. Hosono

    J. Non-Cryst. Sol.   274 ( 1/3 )   257 - 263   2000

  • Transparent p-type semiconductor: LaCuOS layered oxysulfied

    K. Ueda, S. Inoue, S. Hirose, H. Kawazoe, H. Hosono

    Appl. Phys. Lett.   77 ( 17 )   2701 - 2703   2000

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  • Highly Electrically Conductive Indium-Tin-Oxide Thin Films Epitaxially Grown on YSZ(100) by Pulsed Laser Deposition

    H. Ohta, M. Orita, M. Hirano, H. Tanji, H. Kawazoe, H. Hosono

    Appl. Phys. Lett.   76 ( 19 )   2740 - 2742   2000

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  • Optical Properties of SrMoO_3_ THin Films

    H. Mizoguchi, N. Katamura, K. Fukumi, T. Mihara, M. Nakamura, N. Kikuchi, H. Hosono, H. Kawazoe

    J.Appl. Phys.   87 ( 9,Pt.1 )   4617 - 4619   2000

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  • Electron paramagnetic Centers in Donor-doped CaTiO_3_ Single Crystals

    K. Ueda, H. Kwazoe, H. Hosono

    Phys. Rev. B   61 ( 11 )   7440 - 7447   2000

  • Interaction of F_2_ excimer laser light pulses with SiO_2_ glasses: towards the 3rd generation of glassy SiO_2_

    H. Hosono, I. Ikuta

    Nucl. Instr. Meth. B   166   691 - 697   2000

  • 新しいガラス中の欠陥と光誘起巨大膨張

    細野秀雄

    化学工業   51   953   2000

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  • Heteroepitaxial Growth of In_2_O_3_ on YSZ(100)Single Crystal Surface

    M. Orita, H. Ohta, H. Tanji, H. Hosono, H. Kawazoe

    Mat.Res.Symp.Proc.   558   399   2000

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  • Chemical Design of Transparent P-type Conducting Oxides

    H.Yanagi, H.Kawazoe, A.Kudo, M.Yasukawa, H.Hosono

    J.Electroceram   4   407 - 414   2000

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  • Current injection emission from a transparent p-n junction composed of p-SrCu_2_O_2_/n-ZnO

    H.Ohta K.Kawamura, N.Sarukura, M.Orita, M.Hirano, H.Hosono

    Appl.Phys.Lett.   77 ( 4 )   475 - 477   2000

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  • Structure and Refractive Induces of Proton-Implanted LiNbO_3_

    V.V.Atuchin, H.Nagata, K.Kawamura, K.Higuma, J.Ichikawa, L.D.Pokrovsky, H.Takai, H.Hosono

    Jpn.J.Appl.Phys.   39 ( 5A )   2653 - 2656   2000

  • Defect formation and structural alternation in modified SiO_2_ glasses by irradiation with F2 laser or ArF excimer laser

    Y.Ikuta, S.Kikugawa, M.Hirano, H.Hosono

    J.Vac.Sci.Technol.B   18 ( 6 )   2891 - 2895   2000

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  • What is an innovative glass?

    2000

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  • 初めて実現した酸化物紫外発光ダイオード:p-SrCu_2_O_2_/n-ZmO

    太田裕道, 折田政寛, 平野正浩, 細野秀雄

    第285回蛍光体同学会講演資料集   17 - 22   2000

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  • 薩摩切子の赤い色の原因

    中井泉, 沼子千弥, 細野秀雄, 山崎一雄

    glass   43   31   2000

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  • Deep ultraviolet transparent electroconductive b-Ga_2_O_3_ thin films

    M. Orita, H. Ohta, M. Hirano, H. Hosono

    Appl.Phys.Lett.   77 ( 25 )   4166 - 4168   2000

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  • Degradatoin behavior and mechanism in SiO_2_ glasses by excimer lase: comparison between F_2_ and ArF laser

    Y. Ikuta, S. Kikugawa, M. Hirano, H. Hosono

    J.Vac.Sci.Tech.   18   2916   2000

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  • Structure and Refractive Induces of Proton-Implanted LiNbO_3_

    V.V. Atuchin, H. Nagata, K. Kawamura, K. Higuma, J. Ichikawa, L, D. Pokrovsky, H. Takei, H. Hosono

    Jpn.J.Appl.Phys.   39 ( 5A )   2653 - 2656   2000

  • The Nature of the 4.8eV optical Absorption Band Induced by Vacuum-ultraviolet Irradiation of Glassy SiO_2_

    L. Skuja, M. Mizuguchi, H. Hosono, H. Kawazoe

    Nucl. Instr. Meth. B   166/167   711 - 715   2000

  • Materials Desing and Example of Long Lasting phosphorescent Galsses Utilizing Electron Trapped Centers

    T. Kinoshita, H. Hosono

    J. Non-Cryst. Sol.   274 ( 1/3 )   257 - 263   2000

  • Preparation of n-type Conducting Transparent Thin films of AgInO_2_: Sn with Delafossite-type Structure by Pulsed Laser Deposition

    S. Ibuki, H, Yanagi, K. Ueda, H. Kawazoe, H. Hosono

    J. Appl. Phys.   88 ( 5 )   3067 - 3069   2000

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  • Electronic Structure and Optoelectronic Properties of Transparent P-Type Conducting CuAlO_2_

    H. Yanagi, S. Inoue, K. Ueda, H. Kawazoe, H. Hosono, N. Hamada

    J. Appl. Phys.   88 ( 7 )   4159 - 4163   2000

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  • 透明酸化物導電体の新しい展開

    折田政寛, 太田裕道, 細野秀雄

    表面   38   344   2000

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  • Transparent P-type Conductive Oxides, Design and Fabrication of p-n heterojunctions

    H.Kawazoe, H.Yanagi, K.Ueda, H.Hosono

    MRS Bull.   25   28   2000

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  • Fabrication of transparent p-n heterojunction thin film diodes based entirely on oxide semiconductors

    A Kudo, H Yanagi, K Ueda, H Hosono, H Kawazoe, Y Yano

    APPLIED PHYSICS LETTERS   75 ( 18 )   2851 - 2853   1999.11

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  • Excimer laser crystallization of amorphous indium-tin oxide thin films and application to fabrication of Bragg gratings

    H Hosono, M Kurita, H Kawazoe

    THIN SOLID FILMS   351 ( 1-2 )   137 - 140   1999.8

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  • Photochemical processes induced by 157-nm light in H-2-impregnated glassy SiO2 : OH

    M Mizuguchi, L Skuja, H Hosono, T Ogawa

    OPTICS LETTERS   24 ( 13 )   863 - 865   1999.7

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  • Study on electronic structure of CaTiO3 by spectroscopic measurements and energy band calculations

    K Ueda, H Yanagi, H Hosono, H Kawazoe

    JOURNAL OF PHYSICS-CONDENSED MATTER   11 ( 17 )   3535 - 3545   1999.5

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  • Long Lasting Phosphorescence and Photostimulative Luminescence in Tb-ion activated Reduced Calcium Aluminate Glasses

    T.Kinoshita, M.Yamazaki, H.Kawazoe, H.Hosono

    J.Appl.Phys.   86 ( 7 )   3729 - 3733   1999

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  • イオン注入によるガラス・アモルファスの高機能化

    細野秀雄

    ( 3月 )   26 - 31   1999

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  • 光を蓄えるガラス:点欠陥を利用した設計

    細野秀雄, 木下健, 山嵜正明

    化学と工業   52   620 - 623   1999

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  • High Photosensitivity and Nanometer-scale Phase Separation in GeO_2_-SiO_2 Glass Thin Films

    H.Hosono, J.Nishii

    Opt.Lett.   24   1352 - 54   1999

  • Electronic Structure of Polycrystalline AMoO_3_(A=Sr or Ba)

    H.Mizoguchi, K.Fukumi, N.Kitamura, H.Yamashita, H.Yanagi, H.Hosono, H.Kawazoe

    J.Appl.Phys.   85 ( 9 )   6502 - 6505   1999

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  • Pair-generation of Ge electron center and self-trapped hole center in GeO_2_ -SiO_2_ glasses by KrF excimer laser irradiation

    J.Nishii K.Kintaka, H.Hosono, H.Kawazoe, M, Kato K.Muta

    Phys.Rev.   60 ( 10 )   7166 - 7169   1999

  • Long Lasting Phosphorescence and Photostimulative Luminescence in Tb-ion activated Reduced Calcium Aluminate Glasses

    T.Kinoshita, M.Yamazaki, H.Kawazoe, H.Hosono

    J.Appl.Phys.   86 ( 7 )   3729 - 3733   1999

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  • Valence States of Bismuth in New Mixed-valence Oxides: Bi_1-x_Y_x_O_1.5+&_(x=0.4) by XANES

    H.Mizoguchi, H.Hosono, H.Kawazoe, M.Yasukawa, S.Fujitsu K.Fukumi

    Mater.Res.Bull.   34 ( 3 )   373 - 379   1999

  • Electronic Transport in Degenerate Amorphous Oxide Semiconductors

    K.Shimakawa, S.Narushima, H.Kawazoe, H.Hosono

    Philo.Mag.Lett.   79 ( 9 )   755 - 761   1999

  • F doped and H_2_-impregnated synthetic SiO_2_ Glasses for 157 nm Optics

    M. Mizuguchi, L. Skuja, H. Hosono, T. Ogawa

    J. Vac. Sci. Teshnol.   17 ( 6 )   3280 - 3284   1999

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  • Origin of the Red Color of Copper Ruby Glass as Determined by EXAFS and Optical Absorption Spectroscopy(

    I.Nakai, C.Numako, H.Hosono, K.Yamazaki

    J.Amer.Ceram.Soc.   82   689 - 95   1999

  • Yellow Emission from Zinc Oxide Giving an Electron Spin Resonance Signal at g=1.96

    N.Ohashi T.Nakata, T.Sekiguchi, H.Hosono, M.Mizuguchi, T.Tsurumi, J.Tanaka, H.Haneda

    Jpn.J.Appl.Phys.   38 ( 2A )   L113 - L115   1999

  • Effects of Xe_2_^*^ Light (7.2eV) on the Infrared and Vacuum Ultraviolet Absorption Properties of Hydroxyl Groups in Silica Glasse

    Y.Morimoto, S.Nozawa, H.Hosono

    Phys.Rev.B   59 ( 6 )   4066 - 4073   1999

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  • Mechano-catalysis- a novel method for overall water splitting

    S.Ikeda, T.Taanaka, M.Komada, J.N.Kondo, K.Domen, A.Tanaka, H.Hosono, H.Kawazoe

    Phys.Chem.Chem.Phys.   1 ( 18 )   4485 - 4491   1999

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  • ArF Excimer Laser Irradiation Effects in AlF3-based Fluoride Glasses for Vacuum ultraviolet Optics

    H.Hosono, M.Mizuguchi, H.Kawazoe, T.Ichimura, Y.Watanabe, T.Ogawa

    J.Appl.Phys.   85 ( 6 )   3038 - 3043   1999

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  • Effects of fluorine dimer Excimer laser Irradiation on the Optical Transmission and Defect Formation of various Types of Synthetic SiO_2_ Glasses

    H.Hosono, M.Mizuguchi, H.Kawazoe, T.Ogawa

    Appl.Phys.Lett.   74 ( 19 )   2755 - 2757   1999

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  • Bi-self-trapped-Exciton Model for Frenkel Defect Formation in Amorphous SiO_2_ by Proton Irradiation

    N.Matsunami, H.Hosono

    Phys.Rev.B   60 ( 15 )   10616 - 10619   1999

  • Time-resolved Photoluminescence for Diagnosis of ArF Excimer Laser Damage Toughness in CaF_2_ Single Crystals

    M.Mizuguchi, H.Hosono, H.Kawazoe, T.Ogawa

    J.Opt.Soc.Am.B.   16 ( 7 )   1153 - 1159   1999

  • Formation of Hydrogen Bronze of WO_3_ by Ion Implantation

    M.Miyakawa, H.Hosono, H.Kawazoe

    Mater.Res.Bull.   34   115 - 121   1999

  • Valence States of Bismuth in New Mixed-valence Oxides: Bi_1-x_Y_x_O_1.5+&_(x=0.4) by XANES

    H.Mizoguchi, H.Hosono, H.Kawazoe, M.Yasukawa, S.Fujitsu K.Fukumi

    Mater.Res.Bull.   34 ( 3 )   373 - 379   1999

  • Fluorine-doped SiO_2_ Glasses for F_2_ Excimer Laser Optics: fluorine content and defect formation

    H.Hosono, M.Mizuguchi, L.Skuja, T.Ogawa

    Opt.Lett.   24   1549 - 1551   1999

  • Fabrication of ITO Bragg Gratings: An Application of laser Crystallization of Amorphous ITO

    M.Kurita, H.Hosono, H.Kawazoe

    Trans.Mater.Res.Soc. Jpn.   24   79 - 82   1999

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  • Electron Spin Resonance Centers in Donor-Doped CaTiO_3_ Single Crystals

    K.Ueda, H.Hosono, H.Kawazoe

    Solid State Phenomena,   67-68   283 - 288   1999

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  • High Photosensitivity and Nanometer-scale Phase Separation in GeO_2_-SiO_2 Glass Thin Films

    H.Hosono, J.Nishii

    Opt.Lett.   24   1352 - 54   1999

  • Electronic Structure of Polycrystalline AMoO_3_(A=Sr or Ba)

    H.Mizoguchi, K.Fukumi, N.Kitamura, H.Yamashita, H.Yanagi, H.Hosono, H.Kawazoe

    J.Appl.Phys.   85 ( 9 )   6502 - 6505   1999

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  • Pair-generation of Ge electron center and self-trapped hole center in GeO_2_ -SiO_2_ glasses by KrF excimer laser irradiation

    J.Nishii K.Kintaka, H.Hosono, H.Kawazoe, M, Kato K.Muta

    Phys.Rev.   60 ( 10 )   7166 - 7169   1999

  • Mechano-catalysis- a novel method for overall water splitting

    S.Ikeda, T.Taanaka, M.Komada, J.N.Kondo, K.Domen, A.Tanaka, H.Hosono, H.Kawazoe

    Phys.Chem.Chem.Phys.   1 ( 18 )   4485 - 4491   1999

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  • Effect of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msubsup><mml:mrow><mml:mi mathvariant="normal">Xe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow><mml:mrow><mml:mi mathvariant="normal">*</mml:mi></mml:mrow></mml:msubsup></mml:mrow></mml:math>light (7.2 eV) on the infrared and vacuum ultraviolet absorption properties of hydroxyl groups in silica glass

    Yukihiro Morimoto, Shigenori Nozawa, Hideo Hosono

    Physical Review B   59 ( 6 )   4066 - 4073   1999

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  • Formation and relaxation of paramagnetic centers in GeO2-SiO2 glasses by KrF excimer laser irradiation

    J Nishii, K Kintaka, H Hosono, H Kawazoe

    RADIATION EFFECTS AND DEFECTS IN SOLIDS   150 ( 1-4 )   379 - 383   1999

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  • Origin of the Red Color of Copper Ruby Glass as Determined by EXAFS and Optical Absorption Spectroscopy(

    I.Nakai, C.Numako, H.Hosono, K.Yamazaki

    J.Amer.Ceram.Soc.   82   689 - 95   1999

  • Yellow Emission from Zinc Oxide Giving an Electron Spin Resonance Signal at g=1.96

    N.Ohashi T.Nakata, T.Sekiguchi, H.Hosono, M.Mizuguchi, T.Tsurumi, J.Tanaka, H.Haneda

    Jpn.J.Appl.Phys.   38 ( 2A )   L113 - L115   1999

  • ArF Excimer Laser Irradiation Effects in AlF3-based Fluoride Glasses for Vacuum ultraviolet Optics

    H.Hosono, M.Mizuguchi, H.Kawazoe, T.Ichimura, Y.Watanabe, T.Ogawa

    J.Appl.Phys.   85 ( 6 )   3038 - 3043   1999

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  • Effects of fluorine dimer Excimer laser Irradiation on the Optical Transmission and Defect Formation of various Types of Synthetic SiO_2_ Glasses

    H.Hosono, M.Mizuguchi, H.Kawazoe, T.Ogawa

    Appl.Phys.Lett.   74 ( 19 )   2755 - 2757   1999

     More details

  • Bi-self-trapped-Exciton Model for Frenkel Defect Formation in Amorphous SiO_2_ by Proton Irradiation

    N.Matsunami, H.Hosono

    Phys.Rev.B   60 ( 15 )   10616 - 10619   1999

  • Time-resolved Photoluminescence for Diagnosis of ArF Excimer Laser Damage Toughness in CaF_2_ Single Crystals

    M.Mizuguchi, H.Hosono, H.Kawazoe, T.Ogawa

    J.Opt.Soc.Am.B.   16 ( 7 )   1153 - 1159   1999

  • Formation of Hydrogen Bronze of WO_3_ by Ion Implantation

    M.Miyakawa, H.Hosono, H.Kawazoe

    Mater.Res.Bull.   34   115 - 121   1999

  • Electronic Transport in Degenerate Amorphous Oxide Semiconductors

    K.Shimakawa, S.Narushima, H.Kawazoe, H.Hosono

    Philo.Mag.Lett.   79 ( 9 )   755 - 761   1999

  • F doped and H_2_-impregnated synthetic SiO_2_ Glasses for 157 nm Optics

    M. Mizuguchi, L. Skuja, H. Hosono, T. Ogawa

    J. Vac. Sci. Teshnol.   17 ( 6 )   3280 - 3284   1999

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  • 紫外・真空紫外光学用ガラス

    細野秀雄

    SAEJ ジャーナル   60   7 - 20   1999

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  • Optical Materials for Vacuum Ultraviolet Lithography:Interaction of Materials with Excimer Laser Pulses

    HOSONO Hideo, MIZUGUCHI Masafumi

    The Review of laser engineering   27 ( 9 )   616 - 622   1999

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  • 透明電子活性酸化物結晶・アモルファス

    細野秀雄

    セラミックスデータブック99   245 - 248   1999

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  • 長残光蛍光ガラス:設計と実例

    木下健, 山嵜正明, 細野秀雄

    光技術コンタクト   37   765 - 769   1999

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  • Fluorine-doped SiO_2_ Glasses for F_2_ Excimer Laser Optics: fluorine content and defect formation

    H.Hosono, M.Mizuguchi, L.Skuja, T.Ogawa

    Opt.Lett.   24   1549 - 1551   1999

  • Fabrication of ITO Bragg Gratings: An Application of laser Crystallization of Amorphous ITO

    M.Kurita, H.Hosono, H.Kawazoe

    Trans.Mater.Res.Soc. Jpn.   24   79 - 82   1999

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  • Electron Spin Resonance Centers in Donor-Doped CaTiO_3_ Single Crystals

    K.Ueda, H.Hosono, H.Kawazoe

    Solid State Phenomena,   67-68   283 - 288   1999

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  • Formation of electronic conducting amorphous WO3 thin films by ion implantation

    H Hosono, M Miyakawa, H Kawazoe, K Shimizu

    JOURNAL OF NON-CRYSTALLINE SOLIDS   241 ( 2-3 )   190 - 194   1998.11

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    Language:English   Publishing type:Rapid communication, short report, research note, etc. (scientific journal)  

    DOI: 10.1016/S0022-3093(98)00805-9

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  • Permanent refractive-index changes in GeO2 glass slabs induced by irradiation with sub band gap light

    Y Watanabe, J Nishii, H Moriwaki, G Furuhashi, H Hosono, H Kawazoe

    JOURNAL OF NON-CRYSTALLINE SOLIDS   239 ( 1-3 )   104 - 107   1998.10

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  • Observation of electronic structure in conduction band of CaTiO3

    K Ueda, H Yanagi, R Noshiro, H Mizoguchi, T Omata, N Ueda, H Hosono, H Kawazoe

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   106 ( 10 )   964 - 967   1998.10

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  • Long lasting phosphorescence properties of Tb3+-activated reduced calcium aluminate glasses

    H Hosono, T Kinoshita, H Kawazoe, M Yamazaki, Y Yamamoto, N Sawanobori

    JOURNAL OF PHYSICS-CONDENSED MATTER   10 ( 42 )   9541 - 9547   1998.10

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  • Proton-implantation-induced optical phenomena in SiO2 : GeO2 glasses: formation of photosensitive defects and nanometer sized Ge crystals

    K Kawamura, Y Kameshima, H Hosono, H Kawazoe

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   54 ( 1-2 )   18 - 23   1998.6

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  • Experimental evidence for Frenkel defect formation in amorphous SiO2 by electronic excitation

    H Hosono, H Kawazoe, N Matsunami

    PHYSICAL REVIEW LETTERS   80 ( 2 )   317 - 320   1998.1

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  • A New p-Type Conductive Oxide with Wide Band Gap, SrCu_2_O_2_

    A.Kudo, H.Yanagi, H.Hosono, H.Kawazoe

    Mater.Res.Soc.Symp.Proc.   526   299 - 303   1998

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  • Novel Crystalline and Amorphous Oxide materials for Optoelectronics by Ion Implantation

    H.Hosono

    Glastech.Ber.Glass Sci.Technol.   71C   19 - 27   1998

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  • Ion Implantation Into Glassy and Amorphous Oxides : Ion-solid Interaction and Approach to Novel Function

    HOSONO Hideo

    37 ( 4 )   261 - 268   1998

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  • Chemical design and electronic transport properties of wide band gap conducting amorphous oxides

    HOSONO Hideo, KAWAZOE Hiroshi, SHIMAKAWA Kouichi

    OYOBUTURI   67 ( 5 )   560 - 563   1998

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    Publisher:The Japan Society of Applied Physics  

    DOI: 10.11470/oubutsu1932.67.560

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  • P型伝導性透明酸化物の化学設計

    川副博司, 細野秀雄

    セラミックス   33   385 - 85   1998

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  • P型伝導性透明酸化物の探索-研究の動機、現状と将来-

    川副博司, 細野秀雄

    ニューガラス   13   43 - 47   1998

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  • 人工石英の現状と将来~人工水晶とシリカガラスの製法と応用~、、、、().

    細野秀雄, 永井邦彦

    エネルギー・資源   19   100 - 106   1998

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  • Diagnosis of ArF-excimer-laser Damage in CaF_2_ Single Crystals for VUV Optics by Time Resolved Photoluminescence

    H. Hososno

    SPIE Proc.   3424   30 - 40   1998

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  • Solarization of AlF_3_-based Fluoride Glasses for VUV Optics by ArF Excimer Laser Irradiation

    H.Hosono T.Ichimura, M.Mizuguchi, H.Kawazoe, Y.Shinkuma, Y.Watanabe, T.Ogawa

    SPIE Proc.   3424   146 - 156   1998

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  • Enhancement of carrier generation in MgIn_2_O_4_ thin film prepared by pulsed laser deposition technique,

    Atsushi Kudo, Hiroshi Yanagi, Hideo Hosono, Hiroshi Kawazoe

    Mater. Sci. Eng. B   54   51 - 54   1998

  • Defect Formation in Amorphous SiO_2_ by Ion Implantation: electronic excitation effects and chemical effects

    H.Hosono, N.Matsunami

    Nucl.Instr.Meth.Phys.Meth. B   141 ( 1/4 )   566 - 574   1998

  • Long luminescent Glasses: Tb^3+^-activated ZnO-B_2_O_3_-SiO_2_ Glass

    M.Yamazaki, Y.Yamamoto, S.Nagahama, N.Sawanobori, M.Mizuguchi, H.Hosono

    J.Non-Cryst.Sol.   241 ( 1 )   71 - 73   1998

  • Large Electrical Conductivity Enhancement of WO_3_ Thin Films produced by Ion Implantation

    M.Miyakawa, K.Kawamura, H.Hosono K.Kawamura

    J.Appl.Phys.   84 ( 10 )   5610 - 5613   1998

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  • Microporous Glass-ceramics with a Skeleton of Functional Titanium Phosphate Crystals: synthesis, modification and application

    H.Hosono, Y.Abe

    Int.Cong. on Glass   C2   17 - 26   1998

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  • Foramtion and Practical Implementation of Defects in Oxide Glasses : towards Defect Engineering

    H.Hosono, M.Miyakawa

    Int.Cong. on Glass   C10   7 - 16   1998

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  • Color center formation and time-resolved photoluminescence by Arf excimer laser irradiation in CaF_2_ single crystal

    M.Mizuguchi, H.Hosono, H.Kawazoe, T.Ogawa

    SPIE Proc.   3424   60 - 70   1998

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  • N-Type Electrical Conduction in Transparent Thin Films of Delafossite-Type AgInO_2_

    Takuya Otabe, Kazushige Ueda, Atsushi Kudo, Hideo Hosono, Hiroshi Kawazoe

    Appl. Phys. Lett.   72 ( 9 )   1036 - 1038   1998

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  • Excimer Laser Crystallization of Amorphous Indium-Tin-Oxide and Its Application to Fine Patterning

    Hideo HOSONO, Masaaki KURITA Hiroshi KAWAZOE

    Jpn. J. Appl. Phys.   37 ( 10A )   L1119 - L1121   1998

  • Generation of Optical Absorption Bands in CaF_2_ Single Crystals by ArF Excimer Laser Irradiation: Effect of yttrium impurity

    M.Mizuguchi, H.Hosono, H.Kawazoe, T.Ogawa

    J.Vac.Sci.Technol. A   16 ( 5 )   3052 - 3057   1998

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  • Photoconduction in Multicomponent Oxide Glasses

    K.Tanaka, N.Toyosawa, H.Hosono

    J.Non-Cryst.Sol.   224 ( 1 )   43 - 49   1998

  • Carrier compensation and generation in Ca1-xYxTiO_3_ and CaTi_1-x_Nb_x_O_3_ single crystals

    Kazushige Ueda, Hiroshi Yanagi, Hideo Hosono, Hiroshi Kawazoe

    Mater. Sci. Eng. B   54   60 - 63   1998

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  • Free Carrier Absorption in Highly Conducting Amorphous Oxides,

    Koichi Shimakawa, Hideo Hosono, Naoto Kikuchi, Hiroshi Kawazoe

    J. Non-Cryst. Solids.   227/230 ( Pt.A )   513 - 516   1998

  • CaTiO_3_の伝導体電子構造の観察

    106   964 - 967   1998

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  • Band Gap Widening of CdO Thin Films

    Naoyuki Ueda, Hiroo Maeda Hideo Hosono, Hiroshi Kawazoe

    J. Appl. Phys.   84 ( 11 )   6174 - 6177   1998

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  • Origin of Enormous Photon-Induced Volume Expansion of GeO_2_-SiO_2_ Thin Glass Films

    J. Nishii, H. Yamanaka, H. Hosono, H. Kawazoe

    Nucl. Instr. Meth. Phys. Res.B   141 ( 1/4 )   625 - 628   1998

  • Novel n-Type Conducting Amorphous Chalcogenide CdS・In_2_S_x_: An extension of working hypothesis for conducting amorphous oxides

    Hideo Hosono, Hiroo Maeda, Yoshikazu Kameshima, Hiroshi Kawazoe

    J. Non-Cryst. Solids.   227-230   804 - 809   1998

  • Vacuum Ultraviolet Reflectance and Electron Energy Loss Spectra of CaTiO_3_

    Kazushige Ueda, Hiroshi Yanagi, Hideo Hosono, Hiroshi Kawazoe

    J. Phys.: Condens. Matter   10 ( 16 )   3669 - 3677   1998

  • Mechano-catalytic Overall Water Splitting

    S.Ikeda, T.Takata, T.Kondo, G.Hitoki, M.Hara, J.Kondo, K.Domen, H.Hosono, H.Kawazoe, A.Tanaka

    Chem.Commun.   ( 20 )   2185 - 2186   1998

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  • SrCu2O2: A p-type conductive oxide with wide band gap

    Atsushi Kudo, Hiroshi Yanagi, Hideo Hosono, Hiroshi Kawazoe

    Applied Physics Letters   73 ( 2 )   220 - 222   1998

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    Language:English  

    DOI: 10.1063/1.121761

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  • Enhancement of carrier generation in MgIn_2_O_4_ thin film prepared by pulsed laser deposition technique,

    Atsushi Kudo, Hiroshi Yanagi, Hideo Hosono, Hiroshi Kawazoe

    Mater. Sci. Eng. B   54   51 - 54   1998

  • Microporous Glass-ceramics with a Skeleton of Functional Titanium Phosphate Crystals: synthesis, modification and application

    H.Hosono, Y.Abe

    Int.Cong. on Glass   C2   17 - 26   1998

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  • Foramtion and Practical Implementation of Defects in Oxide Glasses : towards Defect Engineering

    H.Hosono, M.Miyakawa

    Int.Cong. on Glass   C10   7 - 16   1998

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  • Color center formation and time-resolved photoluminescence by Arf excimer laser irradiation in CaF_2_ single crystal

    M.Mizuguchi, H.Hosono, H.Kawazoe, T.Ogawa

    SPIE Proc.   3424   60 - 70   1998

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  • Solarization of AlF_3_-based Fluoride Glasses for VUV Optics by ArF Excimer Laser Irradiation

    H.Hosono T.Ichimura, M.Mizuguchi, H.Kawazoe, Y.Shinkuma, Y.Watanabe, T.Ogawa

    SPIE Proc.   3424   146 - 156   1998

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  • A New p-Type Conductive Oxide with Wide Band Gap, SrCu_2_O_2_

    A.Kudo, H.Yanagi, H.Hosono, H.Kawazoe

    Mater.Res.Soc.Symp.Proc.   526   299 - 303   1998

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  • Novel Crystalline and Amorphous Oxide materials for Optoelectronics by Ion Implantation

    H.Hosono

    Glastech.Ber.Glass Sci.Technol.   71C   19 - 27   1998

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  • Diagnosis of ArF-excimer-laser Damage in CaF_2_ Single Crystals for VUV Optics by Time Resolved Photoluminescence

    H. Hososno

    SPIE Proc.   3424   30 - 40   1998

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  • Long luminescent Glasses: Tb^3+^-activated ZnO-B_2_O_3_-SiO_2_ Glass

    M.Yamazaki, Y.Yamamoto, S.Nagahama, N.Sawanobori, M.Mizuguchi, H.Hosono

    J.Non-Cryst.Sol.   241 ( 1 )   71 - 73   1998

  • Large Electrical Conductivity Enhancement of WO_3_ Thin Films produced by Ion Implantation

    M.Miyakawa, K.Kawamura, H.Hosono K.Kawamura

    J.Appl.Phys.   84 ( 10 )   5610 - 5613   1998

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  • Defect formation in amorphous SiO2 by ion implantation: Electronic excitation effects and chemical effects

    Hideo Hosono, Noriaki Matsunami

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms   141 ( 1-4 )   566 - 574   1998

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    Language:English   Publisher:Elsevier  

    DOI: 10.1016/S0168-583X(98)00097-4

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  • Photoconduction in Multicomponent Oxide Glasses

    K.Tanaka, N.Toyosawa, H.Hosono

    J.Non-Cryst.Sol.   224 ( 1 )   43 - 49   1998

  • Origin of Enormous Photon-Induced Volume Expansion of GeO_2_-SiO_2_ Thin Glass Films

    J. Nishii, H. Yamanaka, H. Hosono, H. Kawazoe

    Nucl. Instr. Meth. Phys. Res.B   141 ( 1/4 )   625 - 628   1998

  • Novel n-Type Conducting Amorphous Chalcogenide CdS・In_2_S_x_: An extension of working hypothesis for conducting amorphous oxides

    Hideo Hosono, Hiroo Maeda, Yoshikazu Kameshima, Hiroshi Kawazoe

    J. Non-Cryst. Solids.   227-230   804 - 809   1998

  • Vacuum Ultraviolet Reflectance and Electron Energy Loss Spectra of CaTiO_3_

    Kazushige Ueda, Hiroshi Yanagi, Hideo Hosono, Hiroshi Kawazoe

    J. Phys.: Condens. Matter   10 ( 16 )   3669 - 3677   1998

  • N-Type Electrical Conduction in Transparent Thin Films of Delafossite-Type AgInO_2_

    Takuya Otabe, Kazushige Ueda, Atsushi Kudo, Hideo Hosono, Hiroshi Kawazoe

    Appl. Phys. Lett.   72 ( 9 )   1036 - 1038   1998

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  • Excimer Laser Crystallization of Amorphous Indium-Tin-Oxide and Its Application to Fine Patterning

    Hideo HOSONO, Masaaki KURITA Hiroshi KAWAZOE

    Jpn. J. Appl. Phys.   37 ( 10A )   L1119 - L1121   1998

  • Generation of Optical Absorption Bands in CaF_2_ Single Crystals by ArF Excimer Laser Irradiation: Effect of yttrium impurity

    M.Mizuguchi, H.Hosono, H.Kawazoe, T.Ogawa

    J.Vac.Sci.Technol. A   16 ( 5 )   3052 - 3057   1998

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  • Photoconduction in multicomponent oxide glasses

    Keiji Tanaka, Naoko Toyosawa, Hideo Hosono

    Journal of Non-Crystalline Solids   224 ( 1 )   43 - 49   1998

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    Language:English   Publisher:Elsevier  

    DOI: 10.1016/S0022-3093(97)00471-7

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  • Band Gap Widening of CdO Thin Films

    Naoyuki Ueda, Hiroo Maeda Hideo Hosono, Hiroshi Kawazoe

    J. Appl. Phys.   84 ( 11 )   6174 - 6177   1998

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  • Carrier compensation and generation in Ca1-xYxTiO_3_ and CaTi_1-x_Nb_x_O_3_ single crystals

    Kazushige Ueda, Hiroshi Yanagi, Hideo Hosono, Hiroshi Kawazoe

    Mater. Sci. Eng. B   54   60 - 63   1998

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  • Free Carrier Absorption in Highly Conducting Amorphous Oxides,

    Koichi Shimakawa, Hideo Hosono, Naoto Kikuchi, Hiroshi Kawazoe

    J. Non-Cryst. Solids.   227/230 ( Pt.A )   513 - 516   1998

  • Mechano-catalytic Overall Water Splitting

    S.Ikeda, T.Takata, T.Kondo, G.Hitoki, M.Hara, J.Kondo, K.Domen, H.Hosono, H.Kawazoe, A.Tanaka

    Chem.Commun.   ( 20 )   2185 - 2186   1998

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  • P-type electrical conduction in transparent thin films of CuAlO2

    H Kawazoe, M Yasukawa, H Hyodo, M Kurita, H Yanagi, H Hosono

    NATURE   389 ( 6654 )   939 - 942   1997.10

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  • 30p-E-2 Carrier compensation or generation in Ca_<1-x>Y_xTiO_3 and CaTi_<1-x>Nb_xO_3 single crystals

    Ueda K., Yanagi H., Ueda N., Hosono H., Kawazoe H.

    Meeting abstracts of the Physical Society of Japan   52 ( 1 )   120 - 120   1997.3

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    Language:Japanese   Publisher:The Physical Society of Japan (JPS)  

    CiNii Books

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  • High efficiency-carrier-generation in Li+-implanted MgIn2O4 thin films

    N Kikuchi, N Ueda, H Hosono, H Kawazoe, H Tanoue

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   105 ( 3 )   275 - 277   1997.3

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  • Fast Proton Conducting Glasses: creation by proton implantation and a requirement for fast proton conduction

    H.Hosono K.Kawamura, H.Kawazoe, N.Matsunami, Y.Abe

    J.Appl.Phys.   81 ( 3 )   1296 - 1301   1997

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  • The Structure of Defects Induced in Silica Glass by Boron Implantation

    K.Kawamura, H.Hosono, H.Kawazoe, M.Seto, S.Fujitsu

    The Society of Glass Technology   370 - 376   1997

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  • Design of Functional Inorganic Materials by Ion Beams. Approach to High Performance Oxide Glassy and Amorphous Materials by Ion Implantation.

    HOSONO Hideo

    J. Surf. Sci. Soc. Jpn.   18 ( 5 )   279 - 285   1997

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    Language:Japanese   Publisher:The Surface Science Society of Japan  

    Recently, ion implantation has strongly stimulated efforts for the creation of high performance wide gap oxide materials. This article briefly reviews our recent works on the creation of wide gap oxide glassy and amorphous materials with an optoelectronic function by ion implantation along with the background and expectation for a new extension utilizing properties of photo-active structural defects produced by implantation. The topics cover nanometer-sized colloid embedded glasses for nonlinear optical materials, transparent amorphous oxides with metallic conduction, and fast proton-conducting glasses.

    DOI: 10.1380/jsssj.18.279

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  • Synthesis and Control of Conductivity of Ultraviolet Transmitting b-Ga_2_O_3_ Single Crystal

    N.Ueda, H.Hosono, R.Waseda, H.Kawazoe

    Appl.Phys.Lett.   70 ( 26 )   3561 - 3563   1997

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  • New Mixed-valence Oxides of Bismuth: Bi_1-x_Y_x_O_1.5+d_ (x=0.4)

    H.Mizoguchi K.Ueda, H.Kawazoe, H.Hosono, T.Omata, S.Fujitsu

    J.Mater.Chem.   7 ( 6 )   943 - 946   1997

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  • Anisotropy of Electrical and Optical Properties in b-Ga_2_O_3_ Single Crystals

    N.Ueda, H.Hosono, R.Waseda, H.Kawazoe

    Appl.Phys.Lett.   71 ( 7 )   933 - 935   1997

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  • Nanometer-sized Ge Particles in GeO_2_-SiO_2_ Glasses Produced by Proton Implantation: combined effects of electronic excitation and chemical reaction

    H.Hosono K.Kawamura, Y.Kameshima, H.Kawazoe, N.Matsunami K.Muta

    J.Appl.Phys.   82 ( 9 )   4232 - 4235   1997

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  • Carrier Generation and Compensation in Y- and Nd-doped CaTiO_3_ Single Crystals

    K.Ueda, H.Yanagi, H.Hosono, H.Kawazoe

    Phys.Rev.B   56 ( 20 )   12998 - 13005   1997

  • Charge Transfer Band Observed in Bismuth Mixed-valence Oxides, Bi_1-x_Y_x_O_1.5+d_ ( x=0.3 )

    H.Mizoguchi, H.Kawazoe, H.Hosono, S.Fujitsu

    Solid State Commun.   104 ( 11 )   705 - 708   1997

  • The Structure of Defects Induced in Silica Glass by Boron Implantation

    K.Kawamura, H.Hosono, H.Kawazoe, M.Seto, S.Fujitsu

    The Society of Glass Technology   370 - 376   1997

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  • Fast Proton Conducting Glasses: creation by proton implantation and a requirement for fast proton conduction

    H.Hosono K.Kawamura, H.Kawazoe, N.Matsunami, Y.Abe

    J.Appl.Phys.   81 ( 3 )   1296 - 1301   1997

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  • リチウムイオンを注入したMgIn_2_O_4_薄膜の高いキャリア電子生成

    105   275 - 277   1997

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  • Transparent, Conducting Amorphous Oxides: effect of chemical composition on electrical and optical properties of cadmium germanates

    N.Kikuchi, H.Hosono, H.Kawazoe, K.Oyoshi S.Hishita

    J.Amer.CeramSoc.   80 ( 1 )   22 - 26   1997

  • Transparent, Conducting Amorphous Oxides: effect of chemical composition on electrical and optical properties of cadmium germanates

    N.Kikuchi, H.Hosono, H.Kawazoe, K.Oyoshi S.Hishita

    J.Amer.CeramSoc.   80 ( 1 )   22 - 26   1997

  • Synthesis and Control of Conductivity of Ultraviolet Transmitting b-Ga_2_O_3_ Single Crystal

    N.Ueda, H.Hosono, R.Waseda, H.Kawazoe

    Appl.Phys.Lett.   70 ( 26 )   3561 - 3563   1997

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  • New Mixed-valence Oxides of Bismuth: Bi_1-x_Y_x_O_1.5+d_ (x=0.4)

    H.Mizoguchi K.Ueda, H.Kawazoe, H.Hosono, T.Omata, S.Fujitsu

    J.Mater.Chem.   7 ( 6 )   943 - 946   1997

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  • Anisotropy of Electrical and Optical Properties in b-Ga_2_O_3_ Single Crystals

    N.Ueda, H.Hosono, R.Waseda, H.Kawazoe

    Appl.Phys.Lett.   71 ( 7 )   933 - 935   1997

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  • Nanometer-sized Ge Particles in GeO_2_-SiO_2_ Glasses Produced by Proton Implantation: combined effects of electronic excitation and chemical reaction

    H.Hosono K.Kawamura, Y.Kameshima, H.Kawazoe, N.Matsunami K.Muta

    J.Appl.Phys.   82 ( 9 )   4232 - 4235   1997

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  • Carrier Generation and Compensation in Y- and Nd-doped CaTiO_3_ Single Crystals

    K.Ueda, H.Yanagi, H.Hosono, H.Kawazoe

    Phys.Rev.B   56 ( 20 )   12998 - 13005   1997

  • Charge Transfer Band Observed in Bismuth Mixed-valence Oxides, Bi_1-x_Y_x_O_1.5+d_ ( x=0.3 )

    H.Mizoguchi, H.Kawazoe, H.Hosono, S.Fujitsu

    Solid State Commun.   104 ( 11 )   705 - 708   1997

  • Preparation of Bragg gratings in sputter-deposited GeO2-SiO2 glasses by excimer-laser irradiation

    J Nishii, H Yamanaka, H Hosono, H Kawazoe

    OPTICS LETTERS   21 ( 17 )   1360 - 1362   1996.9

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  • Large enhancement of electrical conductivity in magnesium phosphate glasses by ion implantation of proton

    K Kawamura, H Hosono, H Kawazoe, N Matsunami, Y Abe

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   104 ( 7 )   688 - 690   1996.7

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  • Optical absorption spectra and the nature of conduction carriers of hole-doped Sr1+xLa1-xFeO4

    T Omata, H Ikawa, S Fijitsu, N Ueda, H Hosono, H Kawazoe

    SOLID STATE COMMUNICATIONS   97 ( 5 )   411 - 415   1996.2

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  • Features of valence band structure of TlAlF4

    H. Mizoguchi, T. Omata, H. Kawazoe, S. Fujitsu, H. Hosono, N. Ueda

    Journal of Physics Condensed Matter   8 ( 3 )   303 - 312   1996.1

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  • Defect Formation in SiO_2_: GeO_2_ Glasses Studied by Irradiation with Excimer Laser Light

    H.Hosono, H.Kawazoe, J.Nishii

    Phys.Rev.B   53 ( 18 )   R11921 - R11923   1996

  • Characterization of Ion Irradiated a-Carbon Films

    N.Matsunami, H.Hosono, M.Tazawa

    Elsevier   999 - 1002   1996

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  • Nitriding of Zirconia by Irradiation with Nd:YAG Laser Beam

    S.Fujitsu, M.Sawai, K.Kawamura, H.Hosono

    Mater.Res.Soc.Proc.   397   561 - 565   1996

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  • Creation of Transparent Conducting Amorphous Oxides by Iion Implantation

    N.Kikuchi, H.Hosono, H.Kawazoe

    Trans.Mater.Soc.Jpn.   20   534 - 537   1996

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  • Porous Titanium Phosphate Glass-ceramics with Bacteriostatic Activities

    T.Kasuga, H.Kume, Y.Abe, H.Hosono

    Phos.Res.Bull.   6   253 - 256   1996

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  • Development of Porous Glass-ceramics in Ag-titanium Phosphates and Its Antibacterial Effects

    Y.Abe, H.Hosono, M.Nogami, T.Kasuga

    Ceramics in Medicine   247 - 251   1996

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  • Formation and Optical Absorption Spectra of Mixed Valence State of Tl in Tl_2_Nb_2_O_6+x_ with Pyrochlore Structure

    H.Mizoguchi, H.Kawazoe, T.Ueda, S.Hayashi, H.Hosono N.Ueda

    Bull.Chem.Soc.Jpn.   69 ( 1 )   111 - 115   1996

  • New Amorphous Semiconductor: 2CdO・PbO_x_

    H.Hosono, Y.Yamashita N.Ueda, H.Kawazoe, K.Shimidzu

    Appl.Phys.Lett.   68 ( 5 )   661 - 663   1996

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  • Enhancement of Electrical Conductivity of Polycrystalline b-PbO by Exposure to Ozone Gas at Room Temperature

    H.Mizoguchi, H.Kawazoe, H.Hosono

    Chem.Mater.,   8 ( 12 )   2769 - 2773   1996

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  • Approach to Novel Crystalline and Amorphous Oxide Materials for Optoelectronics by Ion Implantation

    H.Hosono, H.Kawazoe

    Mater.Sci.& Eng.B   41 ( 1 )   39 - 45   1996

  • Noble Transparent Semiconductor: MaIn_2_O_4_

    N. Ueda, H. Hosono, H. Kawazoe

    Solid State Phenomena   51-52   317 - 322   1996

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  • Comparison of formation process of ultraviolet induced color centers in GeO_2_-SiO_2_ glass fiber perform and Ge-implanted SiO_2_

    J. Nishii A. Chayahara, K. Fukumi, K. Fujii, H. Yamanaka, H. Hosono, H. Kawazoe

    NIMB.   116 ( 1/4 )   150 - 153   1996

  • Working Hypothesis to Explore Novel Wide Band Gap Electricaly Conducting Amorphous Oxides and Examples

    H.Hosono, N.Kikuchi, N.Ueda, H.Kawazoe

    J.Non-Cryst.Sol.   198/200 ( Pt 1 )   165 - 169   1996

  • Novel Oxide Amorphous Semiconductors: transparent conducting amorphous oxides

    H.Hosono, M.Yasukawa, H.Kawazoe

    J.Non-Cryst.Sol.   203 ( 1/3 )   334 - 344   1996

  • Formation and Optical Properties of Nanometer-sized Amorphous Arsenic Clusters Embedded in Amorphous SiO_2_ by Ion Implantation

    H.Hosono, H.Tanoue, S.Hishita A.Nakamura

    Nucl.Instr.Meth.B   116 ( 1/4 )   178 - 182   1996

  • Proton-implantation-induced Nanosized Ge Crystal Formation in SiO_2_: GeO_2_ Glasses, K.Kawamura

    H.Hosono, H.Kawazoe

    J.Appl.Phys.   80 ( 3 )   1357 - 1363   1996

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  • Nanometer-scale Heterogeneity in SiO_2_-GeO_2_ Glasses performs and fibers prepared by Vapor Phase Axial Deposition Method

    H.Hosono K.Kawamura, H.Kawazoe, J.Nishii

    J.Appl.Phys.   80 ( 5 )   3115 - 3117   1996

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  • Probing Interface Properties of Nanocomposites by Third-order Nonlinear Optics

    L.Yang, D.H.Osborne, R.F.Haglu, R.H.Magruder, C.W.White, R.A.Zuhr, H.Hosono

    Applied Phys.A   62 ( 5 )   403 - 415   1996

  • Formation and Optical Absorption Spectra of Mixed Valence State of Tl in Tl_2_Nb_2_O_6+x_ with Pyrochlore Structure

    H.Mizoguchi, H.Kawazoe, T.Ueda, S.Hayashi, H.Hosono N.Ueda

    Bull.Chem.Soc.Jpn.   69 ( 1 )   111 - 115   1996

  • New Amorphous Semiconductor: 2CdO・PbO_x_

    H.Hosono, Y.Yamashita N.Ueda, H.Kawazoe, K.Shimidzu

    Appl.Phys.Lett.   68 ( 5 )   661 - 663   1996

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  • Correlation Between Ge E' centers and Optical Absorption Bands in SiO_2_:GeO_2_ Glasses

    H.Hosono, M.Mizuguchi, H.Kawazoe, J.Nishii

    Jap.J.Appl.Phys.   35 ( 2B )   L234 - L236   1996

  • Working Hypothesis to Explore Novel Wide Band Gap Electricaly Conducting Amorphous Oxides and Examples

    H.Hosono, N.Kikuchi, N.Ueda, H.Kawazoe

    J.Non-Cryst.Sol.   198/200 ( Pt 1 )   165 - 169   1996

  • Nitriding of Zirconia by Irradiation with Nd:YAG Laser Beam

    S.Fujitsu, M.Sawai, K.Kawamura, H.Hosono

    Mater.Res.Soc.Proc.   397   561 - 565   1996

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  • Creation of Transparent Conducting Amorphous Oxides by Iion Implantation

    N.Kikuchi, H.Hosono, H.Kawazoe

    Trans.Mater.Soc.Jpn.   20   534 - 537   1996

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  • Porous Titanium Phosphate Glass-ceramics with Bacteriostatic Activities

    T.Kasuga, H.Kume, Y.Abe, H.Hosono

    Phos.Res.Bull.   6   253 - 256   1996

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  • Development of Porous Glass-ceramics in Ag-titanium Phosphates and Its Antibacterial Effects

    Y.Abe, H.Hosono, M.Nogami, T.Kasuga

    Ceramics in Medicine   247 - 251   1996

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  • 透明電導性アモルファス-酸化物半導体のルネッサンスをめざして-

    細野秀雄, 川副博司

    ニューガラス   10   46 - 51   1996

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  • 光照射によるGeO_2_-SiO_2_ガラスのブラッググレーティング

    西井準治, 細野秀雄

    オプトロニクス   8   142 - 148   1996

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  • 幻の化学種“超過酸化物イオンラジカル”を高濃度に包接する結晶:12CaO・7Al_2_O_3_

    細野秀雄

    材料科学   33   23 - 24   1996

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  • Characterization of Ion Irradiated a-Carbon Films

    N.Matsunami, H.Hosono, M.Tazawa

    Elsevier   999 - 1002   1996

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  • Noble Transparent Semiconductor: MaIn_2_O_4_

    N. Ueda, H. Hosono, H. Kawazoe

    Solid State Phenomena   51-52   317 - 322   1996

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  • Comparison of formation process of ultraviolet induced color centers in GeO_2_-SiO_2_ glass fiber perform and Ge-implanted SiO_2_

    J. Nishii A. Chayahara, K. Fukumi, K. Fujii, H. Yamanaka, H. Hosono, H. Kawazoe

    NIMB.   116 ( 1/4 )   150 - 153   1996

  • Novel Oxide Amorphous Semiconductors: transparent conducting amorphous oxides

    H.Hosono, M.Yasukawa, H.Kawazoe

    J.Non-Cryst.Sol.   203 ( 1/3 )   334 - 344   1996

  • Formation and Optical Properties of Nanometer-sized Amorphous Arsenic Clusters Embedded in Amorphous SiO_2_ by Ion Implantation

    H.Hosono, H.Tanoue, S.Hishita A.Nakamura

    Nucl.Instr.Meth.B   116 ( 1/4 )   178 - 182   1996

  • Proton-implantation-induced Nanosized Ge Crystal Formation in SiO_2_: GeO_2_ Glasses, K.Kawamura

    H.Hosono, H.Kawazoe

    J.Appl.Phys.   80 ( 3 )   1357 - 1363   1996

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  • プロトンのイオン注入によるリン酸マグネシウムガラスの電気伝導度の顕著な増大

    104   688 - 690   1996

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  • Nanometer-scale Heterogeneity in SiO_2_-GeO_2_ Glasses performs and fibers prepared by Vapor Phase Axial Deposition Method

    H.Hosono K.Kawamura, H.Kawazoe, J.Nishii

    J.Appl.Phys.   80 ( 5 )   3115 - 3117   1996

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  • Probing Interface Properties of Nanocomposites by Third-order Nonlinear Optics

    L.Yang, D.H.Osborne, R.F.Haglu, R.H.Magruder, C.W.White, R.A.Zuhr, H.Hosono

    Applied Phys.A   62 ( 5 )   403 - 415   1996

  • Enhancement of Electrical Conductivity of Polycrystalline b-PbO by Exposure to Ozone Gas at Room Temperature

    H.Mizoguchi, H.Kawazoe, H.Hosono

    Chem.Mater.,   8 ( 12 )   2769 - 2773   1996

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  • Approach to Novel Crystalline and Amorphous Oxide Materials for Optoelectronics by Ion Implantation

    H.Hosono, H.Kawazoe

    Mater.Sci.& Eng.B   41 ( 1 )   39 - 45   1996

  • Correlation Between Ge E' centers and Optical Absorption Bands in SiO_2_:GeO_2_ Glasses

    H.Hosono, M.Mizuguchi, H.Kawazoe, J.Nishii

    Jap.J.Appl.Phys.   35 ( 2B )   L234 - L236   1996

  • Defect Formation in SiO_2_: GeO_2_ Glasses Studied by Irradiation with Excimer Laser Light

    H.Hosono, H.Kawazoe, J.Nishii

    Phys.Rev.B   53 ( 18 )   R11921 - R11923   1996

  • ELECTRONIC TRANSPORT-PROPERTIES OF HOLE-DOPED SR1+XLA1-XCRO4+DELTA

    T OMATA, T KAWANO, H IKAWA, T SASAMOTO, H HOSONO, H MIZOGUCHI, H KAWAZOE

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   103 ( 11 )   1112 - 1116   1995.11

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  • CHEMICAL INTERACTION IN ION-IMPLANTED AMORPHOUS SIO2 AND APPLICATION TO FORMATION AND MODIFICATION OF NANOSIZE COLLOID PARTICLES

    H HOSONO

    JOURNAL OF NON-CRYSTALLINE SOLIDS   187   457 - 472   1995.7

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  • PREPARATION OF ELECTROCONDUCTIVE AND TRANSPARENT THIN-FILMS OF AGSBO3

    M YASUKAWA, H HOSONO, N UEDA, H KAWAZOE

    JOURNAL OF THE CERAMIC SOCIETY OF JAPAN   103 ( 5 )   455 - 459   1995.5

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  • IMPORTANCE OF IMPLANTATION SEQUENCE IN THE FORMATION OF NANOMETER-SIZE COLLOID PARTICLES EMBEDDED IN AMORPHOUS SIO2 - FORMATION OF COMPOSITE COLLOIDS WITH CU CORE AND A CU2O SHELL BY COIMPLANTATION OF CU AND F

    H HOSONO

    PHYSICAL REVIEW LETTERS   74 ( 1 )   110 - 113   1995.1

  • Importance of implantation sequence in the formation of nanometer size colloid particles embedded in amorphous SiO2: Formation of composite colloids with Cu core and a Cu2O shell by coimplantation of Cu and F

    Hideo Hosono

    Physical Review Letters   74 ( 1 )   110 - 113   1995

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  • Photon Induced Changes of 5eV band in GeO_2_-SiO_2_ Glasses Prepared by VAD and Sputtering Methods

    J.Nishii, H.Yamanaka, H.Hosono, H.Kawazoe

    Glass Science and Technology   67C   322 - 324   1995

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  • Porous Glass-ceramics composed of a titanium phosphate crystal skeleto: A Review: A Review

    H.Hosono, Y.Abe

    J.Non-Cryst.Sol.   190 ( 3 )   185 - 197   1995

  • Photochemical Reactions in GeO_2_-SiO_2_ Glasses Induced by Ultraviolet Irradiation: Comparison between Hg lamp and Excimer laser

    J.Nishii K.Fukumi, H.Yamanaka, K.Kawamura, H.Hosono, H.Kawazoe

    Phys.Rev.B   52 ( 3 )   1661 - 1665   1995

  • Photoemission Studies on Valence band Structure of AgSbO_3_

    M.Yasukawa, H.Hosono, N.Ueda, H.Kawazoe

    Solid State Commun.   95 ( 6 )   399 - 403   1995

  • (透明電子伝導性AgSbO3薄膜の作成)

    103   455 - 459   1995

  • Modification of Magnesium Phosphate Glass by H^+^ irradiation: Formation of OH-bands and Phosphorus-Colloid

    N.Matsunami, K.Kawamura, H.Hosono

    Rad.Eff.   136   311 - 316   1995

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  • Chemical Interacation in ion-implanted amorphous SiO_2_ and application to formation and modification of nanosize colloid particles

    H.Hosono

    J.Non-Cryst.Sol.   187   457 - 472   1995

  • Preparation and Electrical Properties of Bi_2_S_3_ Whiskers

    H.Mizoguchi, H.H.Hosono, N.Ueda, H.Kawazoe

    J.Appl.Phys.   78 ( 2 )   1376 - 1378   1995

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  • UV-induced Photochemical Reactions and Point Defects in Photorefractive SiO_2_:GeO_2_ and Implanted SiO_2_ Glasses

    H.Hosono, J.Nishii, H.Kawazoe

    Technical Digest Series   22   61 - 64   1995

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  • A Large Second-order Nonlinearity in Poled Phosphate Glass Containing Mobile Protons

    Y.Watanabe, N.Takeshita, T.Tsuchiya, H.Hosono, H.Kawazoe

    Technical Digest Series   22   92 - 95   1995

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  • Ultraviolet-radiation induced chemical reactions through one-and two-photon absorption processes in GeO_2_-SiO_2_glasses

    J. Nishii, N. Kitamura, H. Yamanaka, H. Hosono, H. Kawazoe

    Optics Letters   20   1184 - 87   1995

  • Photon Induced Changes of 5eV band in GeO_2_-SiO_2_ Glasses Prepared by VAD and Sputtering Methods

    J.Nishii, H.Yamanaka, H.Hosono, H.Kawazoe

    Glass Science and Technology   67C   322 - 324   1995

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  • Formation and Photobleaching of 5eV bands in Ion Implanted SiO_2_:GeO_2_ and SiO_2_ Glasses for Photosensitive Materials

    H.Hosono, K.Kawamura, N.Ueda, H.Kawazoe, S.Fujitsu, N.Matsunami

    J.Phys.:Condensed Matter   7 ( 26 )   L343 - L350   1995

  • Coversion of Insulating Thin Films of MgIn_2_O_4_ into Transparent Conductors by Ion implantation

    H.Hosono, H, Un'no, N.Ueda, H.Tanoue, N.Matsunami, H.Kawazoe

    Nucl.Instr. Meth.   106 ( 1/4 )   517 - 521   1995

  • Ultraviolet-radiation induced chemical reactions through one-and two-photon absorption processes in GeO_2_-SiO_2_glasses

    J. Nishii, N. Kitamura, H. Yamanaka, H. Hosono, H. Kawazoe

    Optics Letters   20   1184 - 87   1995

  • Novel transparent and electroconductive amorphous semiconductor : Amorphous AgSbO_3_film

    M. Yasuka, H. Hosono, N. Ueda, H. Kawazoe

    Japanese Journal of Applied Physics   34 ( 3A )   L281 - L284   1995

  • Optical and electrical properties of proton-implanted amorphous SiO_2_, GeO_2_-SiO_2_, MgO-P_2_O_5_ and Nanocrystalline MgIn_2_O_4_: novel materials by proton implantation

    H. Hosono, N. Ueda, H. Kawazoe, N. Matsunami

    Journal of Non-Crystalline Solids   182   109   1995

  • Amorphous Transparent Electroconductor 2CdO・GeO_2_: conversion of amorphous insulating cadmium germanate by ion implantation

    H. Hosono, N, Kikuchi N. Ueda, H. Kawazoe, K. Shimidzu

    Appl.Phys.Lett.   67 ( 18 )   2663 - 2665   1995

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  • Second-Harmonic Generation from electrically poled SiO_2_ Glasses: Effect ov OH concentration, Defects, and Poling conditions

    H.Nasu, H.Okamoto, K.Kurachi, J.Matsuoka, K.Kamiya, A.Mito, H.Hosono

    J.Opt.Soc.Am.B   12   644 - 649   1995

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  • Photoemission studies on valence band structure of AgSbO3

    M. Yasukawa, H. Hosono, N. Ueda, H. Kawazoe

    Solid State Communications   95 ( 6 )   399 - 403   1995

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  • Photochemical Reactions in GeO_2_-SiO_2_ Glasses Induced by Ultraviolet Irradiation: Comparison between Hg lamp and Excimer laser

    J.Nishii K.Fukumi, H.Yamanaka, K.Kawamura, H.Hosono, H.Kawazoe

    Phys.Rev.B   52 ( 3 )   1661 - 1665   1995

  • Porous Glass-ceramics composed of a titanium phosphate crystal skeleto: A Review: A Review

    H.Hosono, Y.Abe

    J.Non-Cryst.Sol.   190 ( 3 )   185 - 197   1995

  • Formation and Photobleaching of 5eV bands in Ion Implanted SiO_2_:GeO_2_ and SiO_2_ Glasses for Photosensitive Materials

    H.Hosono, K.Kawamura, N.Ueda, H.Kawazoe, S.Fujitsu, N.Matsunami

    J.Phys.:Condensed Matter   7 ( 26 )   L343 - L350   1995

  • UV-induced Photochemical Reactions and Point Defects in Photorefractive SiO_2_:GeO_2_ and Implanted SiO_2_ Glasses

    H.Hosono, J.Nishii, H.Kawazoe

    Technical Digest Series   22   61 - 64   1995

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  • ホールドープしたSr1+xLa1-xCrO4+d の電子伝導性

    103   1112 - 1116   1995

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  • Preparation and Electrical Properties of Bi_2_S_3_ Whiskers

    H.Mizoguchi, H.H.Hosono, N.Ueda, H.Kawazoe

    J.Appl.Phys.   78 ( 2 )   1376 - 1378   1995

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  • Modification of Magnesium Phosphate Glass by H^+^ irradiation: Formation of OH-bands and Phosphorus-Colloid

    N.Matsunami, K.Kawamura, H.Hosono

    Rad.Eff.   136   311 - 316   1995

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  • Coversion of Insulating Thin Films of MgIn_2_O_4_ into Transparent Conductors by Ion implantation

    H.Hosono, H, Un'no, N.Ueda, H.Tanoue, N.Matsunami, H.Kawazoe

    Nucl.Instr. Meth.   106 ( 1/4 )   517 - 521   1995

  • ガラスへのイオン注入に関する基礎的研究-注入効果の解明とナノサイズコロイドの生成-

    細野秀雄

    旭硝子財団研究助成報告   145 - 156   1995

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  • A Large Second-order Nonlinearity in Poled Phosphate Glass Containing Mobile Protons

    Y.Watanabe, N.Takeshita, T.Tsuchiya, H.Hosono, H.Kawazoe

    Technical Digest Series   22   92 - 95   1995

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  • Second-Harmonic Generation from electrically poled SiO_2_ Glasses: Effect ov OH concentration, Defects, and Poling conditions

    H.Nasu, H.Okamoto, K.Kurachi, J.Matsuoka, K.Kamiya, A.Mito, H.Hosono

    J.Opt.Soc.Am.B   12   644 - 649   1995

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  • Amorphous Transparent Electroconductor 2CdO・GeO_2_: conversion of amorphous insulating cadmium germanate by ion implantation

    H. Hosono, N, Kikuchi N. Ueda, H. Kawazoe, K. Shimidzu

    Appl.Phys.Lett.   67 ( 18 )   2663 - 2665   1995

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  • Optical and electrical properties of proton-implanted amorphous SiO_2_, GeO_2_-SiO_2_, MgO-P_2_O_5_ and Nanocrystalline MgIn_2_O_4_: novel materials by proton implantation

    H. Hosono, N. Ueda, H. Kawazoe, N. Matsunami

    Journal of Non-Crystalline Solids   182   109   1995

  • Novel transparent and electroconductive amorphous semiconductor : Amorphous AgSbO_3_film

    M. Yasuka, H. Hosono, N. Ueda, H. Kawazoe

    Japanese Journal of Applied Physics   34 ( 3A )   L281 - L284   1995

  • PARAMAGNETIC-RESONANCE OF E'-TYPE CENTERS IN SI-IMPLANTED AMORPHOUS SIO2 - SI-29 HYPERFINE-STRUCTURE AND CHARACTERISTICS OF ZEEMAN RESONANCES

    H HOSONO, H KAWAZOE, K OYOSHI, S TANAKA

    JOURNAL OF NON-CRYSTALLINE SOLIDS   179   39 - 50   1994.11

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  • PARAMAGNETIC-RESONANCE OF E'-TYPE CENTERS IN SI-IMPLANTED AMORPHOUS SIO2 - SI-29 HYPERFINE-STRUCTURE AND CHARACTERISTICS OF ZEEMAN RESONANCES

    H HOSONO, H KAWAZOE, K OYOSHI, S TANAKA

    JOURNAL OF NON-CRYSTALLINE SOLIDS   179   39 - 50   1994.11

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  • 29a-PS-33 Electronic structure and magnetic and electrical properties of Sr_<1+x>La_<1-x>FeO_4 I

    Omata T, Ueda K, Hosono H, Katada M, Ueda N, Kawazoe H

    Abstracts of the meeting of the Physical Society of Japan. Annual meeting   49 ( 3 )   91 - 91   1994.3

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    Language:Japanese   Publisher:The Physical Society of Japan (JPS)  

    CiNii Books

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  • 29a-PS-34 Electronic structure and magnetic and electrical properties of Sr_<1+x>La_<1-x>FeO_4 II

    Omata T, Ueda K, Hosono H, Miyazaki T, Hasegawa S, Ueda N, Kawazoe H

    Abstracts of the meeting of the Physical Society of Japan. Annual meeting   49 ( 3 )   92 - 92   1994.3

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    Language:Japanese   Publisher:The Physical Society of Japan (JPS)  

    CiNii Books

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  • CHARACTERISTICS OF 5-EV ABSORPTION-BAND IN SPUTTER-DEPOSITED GEO2-SIO2 THIN GLASS-FILMS

    J NISHII, H YAMANAKA, H HOSONO, H KAWAZOE

    APPLIED PHYSICS LETTERS   64 ( 3 )   282 - 284   1994.1

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  • Depth Profiles of Deuterium and Phosphorus Colloid Formation in BaO×P_2_O_5_ Glasses by D^+^ Ion Irradiation,

    N.Matsunami, H.Hosono

    Nucl. Instr.Meth.B   91 ( 1/4 )   525 - 528   1994

  • Novel Approach for Synthesizing Ge Fine Particles Embedded in Glass by Ion Implantation: Formation of nanosize Ge particles in SiO_2_-GeO_2_ glasses by proton implantation

    H.Hosono, N.Matsunami, A.Kudo T.Ohtsuka

    Appl.Phys.Lett.   65 ( 13 )   1632 - 1634   1994

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  • Phase Cd_2_(1-x)_Y_2x_Sb_2_O_7_ Pyrochlore with a Wide Band gap and High Electrical Conductivity

    K.Yanagawa, Y.Ohki, T.Omata, H.Hosono, N.Ueda, H.Kawazoe

    Jap.J.Appl.Phys.   33   L238-240   1994

  • Information about Interaction of Implanted Ions with Amorphous Silica Obtained from Structural Defects

    H.Hosono, H.Kawazoe, Y.Abe

    Bull.Chem.Res.Kyoto Univ.   72   242 - 253   1994

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  • アモルファスシリカ中の注入イオンの化学的相互作用とナノサイズコロイドの生成

    細野秀雄

    アイオニクス   20   2 - 15   1994

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  • Photon Induced Changes of 5eV Band in GeO_2_-SiO_2_ Glasses Prepared by VAD and Sputtering Methods

    J.Nishii h.Yamanaka, H.Hosono, H.Kawazoe

    Otto Schott colloquium   322 - 325   1994

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  • Information about Interaction of Implanted Ions with Amorphous Silica obtained from structural Defects

    H. Hosono, H. Kawazoe, Y. Abe

    Bull.Inst.Chem.Res.   72   242   1994

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  • Properties of Nanosized Amorphous Red Phosphorus Colloids in Implanted Silica Glasses

    H.Hosono

    Glass Science and Technology   290 - 295   1994

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  • Reaction Kinetics of Oxygen-deficient Centers with Diffusing Oxygen Molecules in Silica Glass, H.Imagawa

    T.Arai, H.Hosono, H.Imai K.Arai

    J.Non-Cryst. Sol.   179   70 - 74   1994

  • Generation of Electron Carriers in Insulating Thin Film of MgIn_2_O_4_ Spinel by Li^+^ implantation

    H.Kawazoe, N.Ueda, H.Unno, T.Omata, H.Hosono, H.Tanoue

    J.Appl.Phys.   76 ( 12 )   7935 - 7941   1994

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  • Silver Ion Selective Porous Lithium Titanium Phosphate Glass-Ceramics Cation Exchanger and Its Application to Bacteriostatic Materials

    H.Hosono, Y.Abe

    Mat.Res.Bull.   29 ( 11 )   1157 - 1162   1994

  • Protonic Conduction in Phosphate Glasses

    Y.Abe, H.Hosono, O.Akita L.L.Hench

    J.Electrochem.Soc.   141 ( 6 )   L64 - L65   1994

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  • Radiation-induced Coloring and paramagnetic Centers in Synthetic SiO_2_: Al glasses

    H.Hosono, H.Kawazoe

    Nucl.Instr.Meth.B   91 ( 1/4 )   395 - 399   1994

  • Ion-Solid Chemistry in Implanted Amorphous SiO_2_

    H.Hosono, H. Imagawa

    Nucle.Instr.Meth.B   91 ( 1/4 )   510 - 514   1994

  • Preparation of Cd_1-x_Y_x_Sb_2_O_6_ Thin Film on Glass Substrates by Radio Frequency Sputtering

    K.Yanagawa, Y.Ohki, T.Omata, H.Hosono, N.Ueda, H.Kawazoe

    Appl.Phys.Lett.   65   406   1994

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  • Electronic Structure of Hole-doped Sr_1+x_La_1-x_FeO_4_ Studied by UPS and XAS

    T.Omata K.Ueda, H.Hosono, T.Miyazaki, S.Hasegawa, N.Ueda, H.Kawazoe

    Phys.Rev.B   49 ( 15 )   10200 - 10205   1994

  • Electrical and Magnetic Properties of Hole-doped Sr_1+x_La_1-x_FeO_4_

    T.Omata K.Ueda, H.Hosono, M.Katada, N.Ueda, H.Kawazoe

    Phys.Rev.B   49 ( 15 )   10194 - 10199   1994

  • Structural Factor Controlling Nanosize Copper Colloid Formation in Doped Amorphous Silica by Ion Implantation

    H.Hosono, R.A.Zuhr

    J.Non-Cryst.Sol.   178   160 - 165   1994

  • Preparation of Cd_1-x_Y_x_Sb_2_O_6_ Thin Film on Glass Substrates by Radio Frequency Sputtering

    K.Yanagawa, Y.Ohki, T.Omata, H.Hosono, N.Ueda, H.Kawazoe

    Appl.Phys.Lett.   65   406   1994

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  • Information about Interaction of Implanted Ions with Amorphous Silica obtained from structural Defects

    H. Hosono, H. Kawazoe, Y. Abe

    Bull.Inst.Chem.Res.   72   242   1994

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  • Properties of Nanosized Amorphous Red Phosphorus Colloids in Implanted Silica Glasses

    H.Hosono

    Glass Science and Technology   290 - 295   1994

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  • Reaction Kinetics of Oxygen-deficient Centers with Diffusing Oxygen Molecules in Silica Glass, H.Imagawa

    T.Arai, H.Hosono, H.Imai K.Arai

    J.Non-Cryst. Sol.   179   70 - 74   1994

  • Generation of Electron Carriers in Insulating Thin Film of MgIn_2_O_4_ Spinel by Li^+^ implantation

    H.Kawazoe, N.Ueda, H.Unno, T.Omata, H.Hosono, H.Tanoue

    J.Appl.Phys.   76 ( 12 )   7935 - 7941   1994

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  • Silver Ion Selective Porous Lithium Titanium Phosphate Glass-Ceramics Cation Exchanger and Its Application to Bacteriostatic Materials

    H.Hosono, Y.Abe

    Mat.Res.Bull.   29 ( 11 )   1157 - 1162   1994

  • Protonic Conduction in Phosphate Glasses

    Y.Abe, H.Hosono, O.Akita L.L.Hench

    J.Electrochem.Soc.   141 ( 6 )   L64 - L65   1994

     More details

  • Novel Approach for Synthesizing Ge Fine Particles Embedded in Glass by Ion Implantation: Formation of nanosize Ge particles in SiO_2_-GeO_2_ glasses by proton implantation

    H.Hosono, N.Matsunami, A.Kudo T.Ohtsuka

    Appl.Phys.Lett.   65 ( 13 )   1632 - 1634   1994

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  • Porous Glass-Ceramics Cation exchangers: Cation exchange properties of porous glass-ceramics with skeleton of fast Li-ion conducting LiTi_2_(PO_4_)_3_ crystal

    H.Hosono, F.Tsuchitani, K.Imai M.Maeda, Y.Abe

    J.Mat.Res.   9 ( 3 )   755 - 761   1994

  • Information about Interaction of Implanted Ions with Amorphous Silica Obtained from Structural Defects

    H.Hosono, H.Kawazoe, Y.Abe

    Bull.Chem.Res.Kyoto Univ.   72   242 - 253   1994

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  • Photon Induced Changes of 5eV Band in GeO_2_-SiO_2_ Glasses Prepared by VAD and Sputtering Methods

    J.Nishii h.Yamanaka, H.Hosono, H.Kawazoe

    Otto Schott colloquium   322 - 325   1994

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  • Electronic Structure of Hole-doped Sr_1+x_La_1-x_FeO_4_ Studied by UPS and XAS

    T.Omata K.Ueda, H.Hosono, T.Miyazaki, S.Hasegawa, N.Ueda, H.Kawazoe

    Phys.Rev.B   49 ( 15 )   10200 - 10205   1994

  • Electrical and Magnetic Properties of Hole-doped Sr_1+x_La_1-x_FeO_4_

    T.Omata K.Ueda, H.Hosono, M.Katada, N.Ueda, H.Kawazoe

    Phys.Rev.B   49 ( 15 )   10194 - 10199   1994

  • Structural Factor Controlling Nanosize Copper Colloid Formation in Doped Amorphous Silica by Ion Implantation

    H.Hosono, R.A.Zuhr

    J.Non-Cryst.Sol.   178   160 - 165   1994

  • Phase Cd_2_(1-x)_Y_2x_Sb_2_O_7_ Pyrochlore with a Wide Band gap and High Electrical Conductivity

    K.Yanagawa, Y.Ohki, T.Omata, H.Hosono, N.Ueda, H.Kawazoe

    Jap.J.Appl.Phys.   33   L238-240   1994

  • Porous Glass-Ceramics Cation exchangers: Cation exchange properties of porous glass-ceramics with skeleton of fast Li-ion conducting LiTi_2_(PO_4_)_3_ crystal

    H.Hosono, F.Tsuchitani, K.Imai M.Maeda, Y.Abe

    J.Mat.Res.   9 ( 3 )   755 - 761   1994

  • Depth Profiles of Deuterium and Phosphorus Colloid Formation in BaO×P_2_O_5_ Glasses by D^+^ Ion Irradiation,

    N.Matsunami, H.Hosono

    Nucl. Instr.Meth.B   91 ( 1/4 )   525 - 528   1994

  • Radiation-induced Coloring and paramagnetic Centers in Synthetic SiO_2_: Al glasses

    H.Hosono, H.Kawazoe

    Nucl.Instr.Meth.B   91 ( 1/4 )   395 - 399   1994

  • Ion-Solid Chemistry in Implanted Amorphous SiO_2_

    H.Hosono, H. Imagawa

    Nucle.Instr.Meth.B   91 ( 1/4 )   510 - 514   1994

  • ELECTRICAL-CONDUCTION DUE TO PROTONS AND ALKALI-METAL IONS IN OXIDE GLASSES

    Y ABE, H HOSONO, WH LEE, T KASUGA

    PHYSICAL REVIEW B   48 ( 21 )   15621 - 15625   1993.12

  • STRUCTURAL DEFECTS AND CHEMICAL INTERACTION OF IMPLANTED IONS WITH SUBSTRATE STRUCTURE IN AMORPHOUS SIO2

    H HOSONO, N MATSUNAMI

    PHYSICAL REVIEW B   48 ( 18 )   13469 - 13473   1993.11

  • COLLOID FORMATION EFFECTS ON DEPTH PROFILE OF IMPLANTED AG IN SIO2 GLASS

    N MATSUNAMI, H HOSONO

    APPLIED PHYSICS LETTERS   63 ( 15 )   2050 - 2052   1993.10

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  • PREFERRED CONCENTRATION ENHANCEMENT OF PHOTOBLEACHABLE DEFECTS RESPONSIBLE FOR 5 EV OPTICAL-ABSORPTION BAND IN SIO2-GEO2 GLASS PREFORM BY HEATING IN A H2 ATMOSPHERE

    H HOSONO, H KAWAZOE, K MUTA

    APPLIED PHYSICS LETTERS   63 ( 4 )   479 - 481   1993.7

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  • NEW METHOD FOR FABRICATION OF SUPERCONDUCTING PIPES IN THE BI-SR-CA-CU-O SYSTEM

    Y ABE, H HOSONO, WH LEE, M HOSOE, K NAKAMURA, E INUKAI

    JOURNAL OF MATERIALS RESEARCH   8 ( 1 )   1 - 4   1993.1

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    Language:English   Publishing type:Article, review, commentary, editorial, etc. (scientific journal)  

    DOI: 10.1557/JMR.1993.0001

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  • Discoloration of Aumina Ceramics with Ultraviolet Radiation and Elecidation of its Mechanism

    M. Yanagisawa, I. Sugiura, T. Hotta, J. Tsubaki, H. Hosono

    J. Ceramic Society of Japan   101 ( 10 )   1189 - 92   1993

  • Generation of E'centers and oxygen hole centers in Synthetic silica glasses by g-irradiation

    H. Imai, K. Arai, J. Isoya, Y. Abe, H. Imagawa

    Physical Review   48 ( 5 )   3116 - 3123   1993

  • 加熱による脱水反応で生成したアモルファス固体の構造の発達

    細野秀雄

    化学   48   139   1993

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  • アモスタル材料

    川副博司, 細野秀雄

    金属   6   24 - 31   1993

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  • ガラス中の点欠陥と光機能

    細野秀雄

    セラミックス   28   139 - 144   1993

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  • ガラスへのイオン注入総論

    細野秀雄

    ニューガラス   8   79 - 85   1993

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  • Chemical Reactions of Ge-related Species in SiO_2_:GeO_2_ optical Fibers

    K.Awazu, H.Hosono, H.Kawazoe

    Proc.SPIE   2044   78 - 87   1993

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  • Porous Glass-Ceramics with a Skeleton of High Performance Titanium Phosphate Crystal: Preparation, Modification, and Application

    H.Hosono, Y.Abe

    Amer.Ceram.Soc.   30   277 - 284   1993

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  • Properties and Applications of Functional Porous Gllass-ceramics composed of a titanium phosphate crystal skeleton

    H.Hosono, Y.Abe

    Amer.Ceram.Soc.   31   181 - 190   1993

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  • Bioceramics Composed of Calcium Polyphosphate Fibers

    T. Kasuga, H. Hosono, Y. Abe

    Phos.Sulf.Silicon.   76   247 - 250   1993

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  • Generation of Active Oxygen Species on Reaction Between Ceramics in CaO-SiO_2_-P_2_O_5_ System and Polymorphonuclear Cells

    Y. Abe, H, Hosono T, Kasuga M. Nagase

    Phos.Sulf.Silicon.   76   243 - 246   1993

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  • Cation Exchange Properties of LiTi_2_(PO_4_)_3_ and Synthesis of its Microporous Materials via Glass

    H.Hosono, K.Imai, Y.Abe

    J.Electrochem.Soc.   140 ( 1 )   L7 - L9   1993

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  • Anomalous fringe pattern of Ag Colloids in phosphate glasses by Implantation

    N. Matsunami, H. Hosono

    Nuclear Instruments and Methods in Physics Research   80-81   1233   1993

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  • Superconducting Bi_2_Sr_2_Ca1Cu_2_O_8+y_ Grass-Ceramics with Different Melting Histories

    W. H. Lee, H. Kondo, H. Hosono, Y. Abe

    Jpn. J. Appl. Phys.   32   1082 - 1090   1993

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  • Integrated microporous glass-ceramics with skeleton of LiTi_2_(PO_4_)_3_ with Three-eimensional Netwoek structure and of Ti(HPO_4_)2・2H_2_O with Two-Dimensional Layerd structure

    H. Hosono, K. Imai, Y. Abe

    J. Non-Cryst. Sol.   162 ( 3 )   287 - 293   1993

  • Simple criterion on colloid formation in SiO_2_ glasses by ion implantation

    H. Hosono

    Japanese Journal of Applied Physics   32 ( 9A )   3892 - 94   1993

  • Discoloration of Aumina Ceramics with Ultraviolet Radiation and Elecidation of its Mechanism

    M. Yanagisawa, I. Sugiura, T. Hotta, J. Tsubaki, H. Hosono

    J. Ceramic Society of Japan   101 ( 10 )   1189 - 92   1993

  • Generation of E'centers and oxygen hole centers in Synthetic silica glasses by g-irradiation

    H. Imai, K. Arai, J. Isoya, Y. Abe, H. Imagawa

    Physical Review   48 ( 5 )   3116 - 3123   1993

  • Introduction to Ion Implantation into Glasses

    8   79 - 85   1993

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  • Chemical Reactions of Ge-related Species in SiO_2_:GeO_2_ optical Fibers

    K.Awazu, H.Hosono, H.Kawazoe

    Proc.SPIE   2044   78 - 87   1993

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  • Porous Glass-Ceramics with a Skeleton of High Performance Titanium Phosphate Crystal: Preparation, Modification, and Application

    H.Hosono, Y.Abe

    Amer.Ceram.Soc.   30   277 - 284   1993

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  • Properties and Applications of Functional Porous Gllass-ceramics composed of a titanium phosphate crystal skeleton

    H.Hosono, Y.Abe

    Amer.Ceram.Soc.   31   181 - 190   1993

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  • Bioceramics Composed of Calcium Polyphosphate Fibers

    T. Kasuga, H. Hosono, Y. Abe

    Phos.Sulf.Silicon.   76   247 - 250   1993

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  • Generation of Active Oxygen Species on Reaction Between Ceramics in CaO-SiO_2_-P_2_O_5_ System and Polymorphonuclear Cells

    Y. Abe, H, Hosono T, Kasuga M. Nagase

    Phos.Sulf.Silicon.   76   243 - 246   1993

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  • Cation Exchange Properties of LiTi_2_(PO_4_)_3_ and Synthesis of its Microporous Materials via Glass

    H.Hosono, K.Imai, Y.Abe

    J.Electrochem.Soc.   140 ( 1 )   L7 - L9   1993

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  • Anomalous fringe pattern of Ag Colloids in phosphate glasses by Implantation

    N. Matsunami, H. Hosono

    Nuclear Instruments and Methods in Physics Research   80-81   1233   1993

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  • Superconducting Bi_2_Sr_2_Ca1Cu_2_O_8+y_ Grass-Ceramics with Different Melting Histories

    W. H. Lee, H. Kondo, H. Hosono, Y. Abe

    Jpn. J. Appl. Phys.   32   1082 - 1090   1993

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  • Integrated microporous glass-ceramics with skeleton of LiTi_2_(PO_4_)_3_ with Three-eimensional Netwoek structure and of Ti(HPO_4_)2・2H_2_O with Two-Dimensional Layerd structure

    H. Hosono, K. Imai, Y. Abe

    J. Non-Cryst. Sol.   162 ( 3 )   287 - 293   1993

  • Simple criterion on colloid formation in SiO_2_ glasses by ion implantation

    H. Hosono

    Japanese Journal of Applied Physics   32 ( 9A )   3892 - 94   1993

  • Structural defects and chemical interaction of implanted ions with substrate structure in amorphous SiO2

    Hideo Hosono, Noriaki Matsunami

    Physical Review B   48 ( 18 )   13469 - 13473   1993

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  • CROSS-SECTIONAL TEM OBSERVATION OF COPPER-IMPLANTED SIO2 GLASS

    H HOSONO, H FUKUSHIMA, Y ABE, RA WEEKS, RA ZUHR

    JOURNAL OF NON-CRYSTALLINE SOLIDS   143 ( 2-3 )   157 - 161   1992.6

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  • FORMATION OF NANOSCALE PHOSPHORUS COLLOIDS IN IMPLANTED SIO2 GLASS

    H HOSONO, Y SUZUKI, Y ABE, K OYOSHI, S TANAKA

    JOURNAL OF NON-CRYSTALLINE SOLIDS   142 ( 3 )   287 - 290   1992.5

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  • PROTON-MAGIC-ANGLE-SPINNING NMR AND IR-ABSORPTION-SPECTRA OF STRONGLY HYDROGEN-BONDED HYDROXYL-GROUPS IN OXIDE GLASSES

    H HOSONO, Y ABE, K DEGUCHI

    JOURNAL OF NON-CRYSTALLINE SOLIDS   142 ( 1-2 )   103 - 107   1992.4

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  • STRUCTURAL DEFECTS AND THE STATE OF IMPLANTED IONS IN SILICA GLASSES IMPLANTED WITH SILICON AND OR NITROGEN-IONS

    H HOSONO

    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS   65 ( 1-4 )   375 - 379   1992.3

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  • PORE-SIZE CONTROL IN POROUS GLASS-CERAMICS WITH SKELETON OF NASICON-TYPE CRYSTAL CATI4(PO4)6

    H HOSONO, Y SAKAI, Y ABE

    JOURNAL OF NON-CRYSTALLINE SOLIDS   139 ( 1 )   90 - 92   1992.1

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  • Nature and orogin of the 5-eV band in SiO_2_: GeO_2_ Glasses

    H.Hosono, Y.Abe, D.L.Kinser, R.A.Weeks, H.Kawazoe

    Phys. Rev. B   46 ( 18 )   11445 - 11451   1992

  • Coalescence of nanosized copper colloid particles formed in Cu-implanted SiO2 glass by implantation of fluorine ions: Formation of violet copper colloids

    Hideo Hosono, Yoshihiro Abe, Noriaki Matsunami

    Applied Physics Letters   60 ( 21 )   2613 - 2615   1992

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    DOI: 10.1063/1.106897

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  • Porous Glass-ceramics with Skeleton of Two-dimensional layered Crystal Ti(HPO_4_)_2_・2H_2_O

    H.Hosono, Y.Abe

    J.Non-Cryst.Sol.   139   86 - 89   1992

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  • Information about interaction of implanted ions with amorphous silica obtained from structural defects

    H.Hosono, R.A.Weeks

    Trans.Mater.Res.Soc.Jpn.   8   63 - 82   1992

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  • Effects of Al_2_O_3_ additives on the Formation of Superconducting Whiskers (2212 phase) in Melt-quenched BiSrCaCu_2_O_x_

    Y.Abe K.Hirata, H.Hosono, Y.Kudo

    J.Mater.Res.   7   1599 - 1601   1992

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  • Formation of Copper Nanoscale Particles in Implanted SiO_2_ Glasses

    H.Hosono, Y.Ikuhara, Y.Abe R.A.Weeks

    J.Mater.Sci.Lett.   11 ( 18 )   1257 - 1259   1992

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  • Superconducting Ceramics of Bi_2_Sr_2_Cu_2_O_x_ Prepared by Heating in a Vacuum-sealed Vessel

    Y.Abe, H.Hosono, W.H.Lee, T.Kasuga

    Appl.Phys.Lett.   60   2300-02   1992

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  • Evidence for Pair Generation of an E' center and a Nonbridging Oxygen-hole Center in g-ray- irradiated Fluorine-doped Low-OH Synthetic Silica Glasses

    K.Arai, H.Imai J.Isoya, H.Hosono, Y.Abe, H.Imagawa

    Phys.Rev.B   45 ( 18 )   10818 - 10821   1992

  • リン酸塩系の多孔質結晶化ガラス

    阿部良弘, 細野秀雄

    光技術コンタクト   30   667 - 71   1992

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  • 新しい多孔質結晶化ガラス(その2)-2次元層状結晶Ti(HPO_4_)_2_・H_2_Oおよび3次元構造をもつ高Li導電性LiTis(PO_4_)_3_を骨格とする多孔質結晶ガラス-

    細野秀雄, 阿部良弘

    ニューガラス   7   196 - 201   1992

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  • ガラスへのイオン注入によるナノスケールコロイドの生成

    細野秀雄

    セラミックス   27   502 - 507   1992

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  • Improvement of Chemical and Mechanical Properties of Unidirectionally Crystallized Calcium Phosphate Glass-ceramics by Reaction with Ammonia Gas

    H.Hosono, H.Sato, Y.Abe

    Proc.XIV Int.Cong.Glass   2   137 - 142   1992

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  • Coalescence of nanosized copper colloid particles formed by Cu-implanted SiO_2_ glasses by implantation of fluorine ions

    H. Hosono, Y. Abe, N. Matsunami

    Applied Physics letters   60 ( 21 )   2613 - 2615   1992

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  • Nature and orogin of the 5-eV band in SiO_2_: GeO_2_ Glasses

    H.Hosono, Y.Abe, D.L.Kinser, R.A.Weeks, H.Kawazoe

    Phys. Rev. B   46 ( 18 )   11445 - 11451   1992

  • Improvement of Chemical and Mechanical Properties of Unidirectionally Crystallized Calcium Phosphate Glass-ceramics by Reaction with Ammonia Gas

    H.Hosono, H.Sato, Y.Abe

    Proc.XIV Int.Cong.Glass   2   137 - 142   1992

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  • Information about interaction of implanted ions with amorphous silica obtained from structural defects

    H.Hosono, R.A.Weeks

    Trans.Mater.Res.Soc.Jpn.   8   63 - 82   1992

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  • Cross-sectional TEM Observation of Copper-implanted SiO_2_ Glasses

    H.Hosono, H.Fukushima, Y.Abe, R.A.Weeks, R.A.Zuhr

    J.Non-Cryst.Sol.   143   157 - 61   1992

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  • Concentrations of Residual Carbonate Ions in the Bi-Sr-Ca-Cu-O Glasses

    W.H.Lee, H.Hosono, Y.Abe

    J.Amer.Ceram.Soc.   75 ( 6 )   1658 - 1661   1992

  • Porous Glass-ceramics with Skeleton of Two-dimensional layered Crystal Ti(HPO_4_)_2_・2H_2_O

    H.Hosono, Y.Abe

    J.Non-Cryst.Sol.   139   86 - 89   1992

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  • Porous glass-ceramics with a skeleton of the fast-Li-conducting crystal Li_1+x_Ti_2-x_Al_x_(PO_4_)_3_

    H. Hosono, Y. Abe

    J. Amer. Ceram. Soc.   75 ( 10 )   2862 - 2864   1992

  • Lange third-order optical nonlinearity of nanometer-sized amorphous semiconductor : Phosphorus colloids in SiO_2_ glass by ion implantation

    H. Hosono, Y. Abe, Y. L. Lee, T, Tokisaki, A. Nakamura

    Applied Physics letters   61 ( 23 )   2747 - 2749   1992

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  • Structural Defects and State of Implanted Ions in Silica Glasses Implanted with Silicon and/or Nitrogen Ions

    H.Hosono

    Nucl.Instr.Meth.B   65   375 - 379   1992

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  • Porous glass-ceramics with a skeleton of the fast-Li-conducting crystal Li_1+x_Ti_2-x_Al_x_(PO_4_)_3_

    H. Hosono, Y. Abe

    J. Amer. Ceram. Soc.   75 ( 10 )   2862 - 2864   1992

  • Lange third-order optical nonlinearity of nanometer-sized amorphous semiconductor : Phosphorus colloids in SiO_2_ glass by ion implantation

    H. Hosono, Y. Abe, Y. L. Lee, T, Tokisaki, A. Nakamura

    Applied Physics letters   61 ( 23 )   2747 - 2749   1992

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  • Effects of Al_2_O_3_ additives on the Formation of Superconducting Whiskers (2212 phase) in Melt-quenched BiSrCaCu_2_O_x_

    Y.Abe K.Hirata, H.Hosono, Y.Kudo

    J.Mater.Res.   7   1599 - 1601   1992

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  • Formation of Copper Nanoscale Particles in Implanted SiO_2_ Glasses

    H.Hosono, Y.Ikuhara, Y.Abe R.A.Weeks

    J.Mater.Sci.Lett.   11 ( 18 )   1257 - 1259   1992

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  • Superconducting Ceramics of Bi_2_Sr_2_Cu_2_O_x_ Prepared by Heating in a Vacuum-sealed Vessel

    Y.Abe, H.Hosono, W.H.Lee, T.Kasuga

    Appl.Phys.Lett.   60   2300-02   1992

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  • Evidence for Pair Generation of an E' center and a Nonbridging Oxygen-hole Center in g-ray- irradiated Fluorine-doped Low-OH Synthetic Silica Glasses

    K.Arai, H.Imai J.Isoya, H.Hosono, Y.Abe, H.Imagawa

    Phys.Rev.B   45 ( 18 )   10818 - 10821   1992

  • Cross-sectional TEM Observation of Copper-implanted SiO_2_ Glasses

    H.Hosono, H.Fukushima, Y.Abe, R.A.Weeks, R.A.Zuhr

    J.Non-Cryst.Sol.   143   157 - 61   1992

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  • Concentrations of Residual Carbonate Ions in the Bi-Sr-Ca-Cu-O Glasses

    W.H.Lee, H.Hosono, Y.Abe

    J.Amer.Ceram.Soc.   75 ( 6 )   1658 - 1661   1992

  • EFFECT OF COOLING RATE OF BI2SR2CA1CU2OX MELT ON THE SUPERCONDUCTING PROPERTIES OF THE RESULTANT POLYCRYSTALLINE CERAMICS

    WH LEE, H HOSONO, K NAKAMURA, Y ABE

    PHYSICA C   185 ( Pt 4 )   2389 - 2390   1991.12

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  • Effects of Melting Temperature on the Properties of High-Tc Superconducting Bi_2?Sr_2_CaCu_2_O_x_ Glass-Ceramics

    W.H.Lee, H.Hosono, Y.Abe

    Advances in Superconductivity III   809 - 812   1991

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  • 真空紫外レーザー光の照射によるシリカガラスSi-O結合の切断

    細野秀雄

    化学と工業   44   1313 - 1314   1991

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  • ガラス中の配位子場とその制御

    細野秀雄

    オプトロニクス   7   110 - 114   1991

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  • Characteristics of Superconducting Ceramics Prepared via Melting of Bi-Sr-Ca-Cu-O Containing Al_2_O_3_

    K.Hirata, H.Hosono, Y.Abe

    Phosphorus Research Bull   1   299 - 304   1991

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  • Effects of Na_2_O Content on the Pore Size of Porous Glass-Ceramics with a Skeleton of Complex Titanium Phosphates and Their Application to Humidity Sensors

    H.Hosono, Y.Abe

    Phosphorus Research Bull.   1   351 - 356   1991

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  • Effects of Cooling Rate of Bi_2_Sr_2_Ca_1_Cu_2_O_x_ Melt on the Superconducting Properties of the Resulting Polycrystalline Ceramics

    W.H.Lee, H.Hosono, K.Nakamutra, Y.Abe

    Physica C   185/189 ( Pt 4 )   2389 - 2390   1991

  • Microporous Glass-ceramics Composed of CaTi_4_(PO_4_)_6_ Skeleton and Their Application to carriers for Immobilization of Enzymes

    H.Hosono, Y.Maenami, Y.Abe

    Sci.Technol. on New Glasses   99 - 104   1991

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  • Characterization of Superconducting Ceramics Prepared Via Melting of Bi-Sr-Ca-Cu-O Containing Al_2_O_3

    K.Hirata, H.Hosono, Y.Abe

    Science and Technology of New Glasses   299 - 304   1991

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  • Effects of Melting Temperature on the Properties of High-Tc Superconducting Bi_2?Sr_2_CaCu_2_O_x_ Glass-Ceramics

    W.H.Lee, H.Hosono, Y.Abe

    Advances in Superconductivity III   809 - 812   1991

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  • APPLICATION OF A MICROPOROUS GLASS-CERAMICS WITH A SKELETON OF CATI4(PO4)6 TO CARRIERS FOR IMMOBILIZATION OF ENZYMES

    T SUZUKI, M TORIYAMA, H HOSONO, Y ABE

    JOURNAL OF FERMENTATION AND BIOENGINEERING   72 ( 5 )   384 - 391   1991

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  • Fast Lithium Conducting Glass-ceramics in the Li_2_O-CaO-TiO_2_-Al_2_O_3_-P_2_O_5_ System

    H.Hosono, Y.Abe

    Solid State Ionics   44 ( 3/4 )   293 - 297   1991

  • Fourier transform infrared attenuated total reflection spectra of ion-implanted silica glasses

    H. Hosono

    J.Appl.Phys.   69 ( 12 )   8079 - 8082   1991

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  • Effects of coimplantation of Si and N on structural defects and Si-N bond formation in silica glass

    hosono

    Physical Review B   43 ( 14 )   11966 - 11970   1991

  • Experimental evidence for the Si-Si bond model of the 7.6-eV band in SiO2 glass

    H. Hosono, Y. Abe, H. Imagawa, H. Imai, K. Arai

    Physical Review B   44 ( 21 )   12043 - 12045   1991

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  • Characteristics of Superconducting Ceramics Prepared via Melting of Bi-Sr-Ca-Cu-O Containing Al_2_O_3_

    K.Hirata, H.Hosono, Y.Abe

    Phosphorus Research Bull   1   299 - 304   1991

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  • Effects of Na_2_O Content on the Pore Size of Porous Glass-Ceramics with a Skeleton of Complex Titanium Phosphates and Their Application to Humidity Sensors

    H.Hosono, Y.Abe

    Phosphorus Research Bull.   1   351 - 356   1991

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  • Microporous Glass-ceramics Composed of CaTi_4_(PO_4_)_6_ Skeleton and Their Application to carriers for Immobilization of Enzymes

    H.Hosono, H.Maenami, Y.Abe

    Science and Technology of New Glasses   99 - 104   1991

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  • Evidence for Protonic Conduction in Alkali-free Phosphate Glasses

    M.Kotama, K.Nakanishi, H.Hosono, Y.Abe L.L.Hench

    J. Electrochem.Soc.   138 ( 10 )   2928 - 2930   1991

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  • Dependence of defects Induced by Excimer Laser on Intrinsic Structural Defects in Synthetic Silica Glasses

    H.Imai K.Arai, H.Hosono, Y.Abe, T.Arai, H.Imagawa

    Phys.Rev. B   44 ( 10 )   4812 - 4818   1991

  • Microporous Glass-ceramics Composed of CaTi_4_(PO_4_)_6_ Skeleton and Their Application to carriers for Immobilization of Enzymes

    H.Hosono, H.Maenami, Y.Abe

    Science and Technology of New Glasses   99 - 104   1991

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  • Evidence for Protonic Conduction in Alkali-free Phosphate Glasses

    M.Kotama, K.Nakanishi, H.Hosono, Y.Abe L.L.Hench

    J. Electrochem.Soc.   138 ( 10 )   2928 - 2930   1991

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  • Dependence of defects Induced by Excimer Laser on Intrinsic Structural Defects in Synthetic Silica Glasses

    H.Imai K.Arai, H.Hosono, Y.Abe, T.Arai, H.Imagawa

    Phys.Rev. B   44 ( 10 )   4812 - 4818   1991

  • Fast Lithium Conducting Glass-ceramics in the Li_2_O-CaO-TiO_2_-Al_2_O_3_-P_2_O_5_ System

    H.Hosono, Y.Abe

    Solid State Ionics   44 ( 3/4 )   293 - 297   1991

  • Fourier transform infrared attenuated total reflection spectra of ion-implanted silica glasses

    H. Hosono

    J.Appl.Phys.   69 ( 12 )   8079 - 8082   1991

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  • Effects of coimplantation of Si and N on structural defects and Si-N bond formation in silica glass

    hosono

    Physical Review B   43 ( 14 )   11966 - 11970   1991

  • Effects of Cooling Rate of Bi_2_Sr_2_Ca_1_Cu_2_O_x_ Melt on the Superconducting Properties of the Resulting Polycrystalline Ceramics

    W.H.Lee, H.Hosono, K.Nakamutra, Y.Abe

    Physica C   185/189 ( Pt 4 )   2389 - 2390   1991

  • Microporous Glass-ceramics Composed of CaTi_4_(PO_4_)_6_ Skeleton and Their Application to carriers for Immobilization of Enzymes

    H.Hosono, Y.Maenami, Y.Abe

    Sci.Technol. on New Glasses   99 - 104   1991

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  • Characterization of Superconducting Ceramics Prepared Via Melting of Bi-Sr-Ca-Cu-O Containing Al_2_O_3

    K.Hirata, H.Hosono, Y.Abe

    Science and Technology of New Glasses   299 - 304   1991

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  • PROPERTIES AND MECHANISM OF SOLARIZATION IN AS-DOPED SODA LIME SILICA GLASSES WITH ULTRAVIOLET-RADIATION

    H HOSONO, Y ABE

    JOURNAL OF NON-CRYSTALLINE SOLIDS   125 ( 1-2 )   98 - 106   1990.11

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  • EFFECT OF COMPOSITION ON THE RATES OF PHOTODARKENING AND SILVER PHOTODOPING IN AMORPHOUS P-SE FILMS

    K KAWASHIMA, H HOSONO, Y ABE

    APPLIED PHYSICS LETTERS   57 ( 16 )   1595 - 1596   1990.10

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  • FORMATION OF OXYGEN-DEFICIENT TYPE STRUCTURAL DEFECTS AND STATE OF IONS IN SIO2 GLASSES IMPLANTED WITH TRANSITION-METAL IONS

    H HOSONO, RA WEEKS, H IMAGAWA, R ZUHR

    JOURNAL OF NON-CRYSTALLINE SOLIDS   120 ( 1-3 )   250 - 255   1990.4

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  • BLEACHING OF PEROXY RADICAL IN SIO2 GLASS WITH 5 EV LIGHT

    H HOSONO, RA WEEKS

    JOURNAL OF NON-CRYSTALLINE SOLIDS   116 ( 2-3 )   289 - 292   1990.2

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    DOI: 10.1016/0022-3093(90)90705-Q

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  • New Calcium Phosphate Glass-ceramics for Bone Implants and castable Dental Crown

    Y.Abe H.hosono, M.Hosoe, S.Imura, Y.Tanaka

    Handbook of Bioactive Ceramics   1   109 - 114   1990

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  • Calcium Phosphate Glass-ceramics for Biomedical and Biotechnological Applications

    Y.Abe H.Hosono

    旭硝子工業奨励会研究報告   56   1 - 11   1990

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  • シリカガラスへのイオン注入

    細野秀雄

    ニューガラス   5   322 - 330   1990

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  • 新しい多孔質結晶化ガラス

    細野秀雄, 阿部良弘

    ニューガラス   5   304 - 310   1990

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  • New Calcium Phosphate Glass-ceramics for Bone Implants and castable Dental Crown

    Y.Abe H.hosono, M.Hosoe, S.Imura, Y.Tanaka

    Handbook of Bioactive Ceramics   1   109 - 114   1990

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  • Protonic conduction and O-H Bonding state in Phosphate Glasses

    Y. Abe, H, Hosono T, Kamae K. Kawashima

    Phos.Sykf.&Silicon   51/52   113 - 116   1990

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  • Protonic Conduction in PbO-SiO_2_ Glasses: A Quantitative Estimation

    Y.Abe, H.Hosono, Y.Hikichi L.L.Hench

    J.Mat.Sci.Lett.   9 ( 12 )   1443 - 1444   1990

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  • Electrical Properties of Silver Photodoped Amorphous Red Phosphorus

    K.Kawashima, J.Z.Ding, H.Hosono, Y.Abe

    Phos. & Sulf.   51/52   157 - 160   1990

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  • Porous NaTi2(PO4)3 Glass-ceramics

    H.Hosono, Y.Abe

    J.Electrochem.Soc.   137 ( 10 )   3149 - 3151   1990

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  • Preparation of Monolithic Porous Titania-silica Ceramics

    H.Hosono, Y.Sakai, M.Fasano, Y.Abe

    J. Am. Ceram. Soc.   73 ( 8 )   2536 - 2538   1990

  • Properties and Mechanism of Photochromism in Reduced Calcium Aluminate Glasses

    H.Hosono, N.Asada Y.Abe

    J.Appl.Phys.   67 ( 6 )   2840 - 2847   1990

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  • Electron paramagnetic resonance spectroscopy of titanium-ion-implanted silica

    G.Whichard, H.Hosono, R.A.Weeks, R.A.Zuhr, R.H.Magruder

    J.Appl.Phys.   67 ( 12 )   7526 - 7530   1990

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  • Calcium Phosphate Glass-ceramics for Biomedical and Biotechnological Applications

    Y.Abe H.Hosono

    旭硝子工業奨励会研究報告   56   1 - 11   1990

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  • Ion-implantation into silica glass- Elucidation of structural defects produced implantation and information obtained through the elucidation-

    5   322 - 330   1990

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  • New porous glass-ceramics

    5   304 - 310   1990

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  • Protonic conduction and O-H Bonding state in Phosphate Glasses

    Y. Abe, H, Hosono T, Kamae K. Kawashima

    Phos.Sykf.&Silicon   51/52   113 - 116   1990

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  • Protonic Conduction in PbO-SiO_2_ Glasses: A Quantitative Estimation

    Y.Abe, H.Hosono, Y.Hikichi L.L.Hench

    J.Mat.Sci.Lett.   9 ( 12 )   1443 - 1444   1990

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  • Electrical Properties of Silver Photodoped Amorphous Red Phosphorus

    K.Kawashima, J.Z.Ding, H.Hosono, Y.Abe

    Phos. & Sulf.   51/52   157 - 160   1990

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  • Porous NaTi2(PO4)3 Glass-ceramics

    H.Hosono, Y.Abe

    J.Electrochem.Soc.   137 ( 10 )   3149 - 3151   1990

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  • Preparation of Monolithic Porous Titania-silica Ceramics

    H.Hosono, Y.Sakai, M.Fasano, Y.Abe

    J. Am. Ceram. Soc.   73 ( 8 )   2536 - 2538   1990

  • Properties and Mechanism of Photochromism in Reduced Calcium Aluminate Glasses

    H.Hosono, N.Asada Y.Abe

    J.Appl.Phys.   67 ( 6 )   2840 - 2847   1990

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  • Electron paramagnetic resonance spectroscopy of titanium-ion-implanted silica

    G.Whichard, H.Hosono, R.A.Weeks, R.A.Zuhr, R.H.Magruder

    J.Appl.Phys.   67 ( 12 )   7526 - 7530   1990

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  • Temperature Dependence of Infrared Absorption Spectra of Hydroxyl Groups in Soda Germanate Glasses

    H.Hosono, Y.Abe

    J.Amer.Ceram.Soc.   72 ( 1 )   44 - 48   1989

  • Superconducting glass-ceramic Fine Rods in BiCaSrCu_2_Al_0.5_O_x_ Prepared Under a Temperature Gradient -Tc and the Texture of Specimen-

    Y.Abe, H.Arakawa, M.Hosoe, Y.Hikichi J.Iwase, H.Hosono, Y.Kubo

    Jap.J.Appl.Phys.   28   L1929-30   1989

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  • Magnetic Measurements of Superconducting Glass-ceramic Fine Rods in BiCaSrCu_2_Al_0.5_O_x_ Prepared Under a Temperature Gradient

    Y.Higashida, H.Yokoyama, K.Michishita, Y.Kubo, H.Yoshida, Y. Abe, H.Hosono

    Appl.Phys.Lett.   55 ( 15 )   1578 - 1580   1989

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  • Porous Glass-ceramic in the CaO-TiO_2_-P_2_O_5_ System

    H.Hosono, Z.Zhang Y.Abe

    J.Amer.Ceram.Soc.   72 ( 9 )   1587 - 1590   1989

  • 還元リン酸塩ガラスの熱着色-退色のDTAによる検討(DTA Studies for Thermochromism and Thermal Bleaching in Reduced Phosphate Glasses)

    川島孝一, 丁金珠, 細野秀雄, 阿部良弘

    セラミックス論文誌   97   823 - 27   1989

  • アモルファス赤リンの光ブリーチング機構 (Photobleaching Mechanism in Amorphous Red Phosphorus)

    川島孝一, 細野秀雄, 阿部良弘

    セラミックス論文誌   97   351 - 54   1989

  • アモルファス赤リンの光ブリーチング現象 (Photobleaching in Amorhous Red Phosphorus)

    川島孝一, 細野秀雄, 阿部良弘

    セラミックス論文誌   97   346 - 50   1989

  • Electrical Conduction in Magnesium Phosphate Glasses Containing Heavy Water

    H.Hosono, T.Kamae, Y.Abe

    J.Amer.ceram.Soc.   72 ( 2 )   294 - 297   1989

  • Temperature Dependence of Infrared Absorption Spectra of Hydroxyl Groups in Soda Germanate Glasses

    H.Hosono, Y.Abe

    J.Amer.Ceram.Soc.   72 ( 1 )   44 - 48   1989

  • Correlation between Optical Absorption and Refractive Index of Silica and Silicate Glasses Implanted with Copper

    R.A.Weeks, H.Hosono, R.A.Zuhr, R.magruder, H.Mogul

    Mater.Res.Soc.Proc.   152   115 - 120   1989

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  • Preparation and Properties of calcium Phosphate Glass-Ceramics for Castable Dental Crown

    Y.Abe, H.Hosono, M.Hosoe S.Tsutsumi

    Bioceramics   1   181 - 186   1989

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  • Structural Defects in Chromium-Ion-Implanted Vitreous Silica

    H.Hosono, R.A.Weeks

    Phys.Rev.B   40 ( 15 )   10543 - 10549   1989

  • Superconducting glass-ceramic Fine Rods in BiCaSrCu_2_Al_0.5_O_x_ Prepared Under a Temperature Gradient -Tc and the Texture of Specimen-

    Y.Abe, H.Arakawa, M.Hosoe, Y.Hikichi J.Iwase, H.Hosono, Y.Kubo

    Jap.J.Appl.Phys.   28   L1929-30   1989

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  • Magnetic Measurements of Superconducting Glass-ceramic Fine Rods in BiCaSrCu_2_Al_0.5_O_x_ Prepared Under a Temperature Gradient

    Y.Higashida, H.Yokoyama, K.Michishita, Y.Kubo, H.Yoshida, Y. Abe, H.Hosono

    Appl.Phys.Lett.   55 ( 15 )   1578 - 1580   1989

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  • Porous Glass-ceramic in the CaO-TiO_2_-P_2_O_5_ System

    H.Hosono, Z.Zhang Y.Abe

    J.Amer.Ceram.Soc.   72 ( 9 )   1587 - 1590   1989

  • Electrical Conduction in Magnesium Phosphate Glasses Containing Heavy Water

    H.Hosono, T.Kamae, Y.Abe

    J.Amer.ceram.Soc.   72 ( 2 )   294 - 297   1989

  • Correlation between Optical Absorption and Refractive Index of Silica and Silicate Glasses Implanted with Copper

    R.A.Weeks, H.Hosono, R.A.Zuhr, R.magruder, H.Mogul

    Mater.Res.Soc.Proc.   152   115 - 120   1989

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  • Preparation and Properties of calcium Phosphate Glass-Ceramics for Castable Dental Crown

    Y.Abe, H.Hosono, M.Hosoe S.Tsutsumi

    Bioceramics   1   181 - 186   1989

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  • Structural Defects in Chromium-Ion-Implanted Vitreous Silica

    H.Hosono, R.A.Weeks

    Phys.Rev.B   40 ( 15 )   10543 - 10549   1989

  • Superconducting Glass-ceramic Rods in BiCaSrCu_2_Ox Prepared by Crystallization under a Temperature Gradient

    Y.Abe, H.Hosono, M.Hosoe, J.Iwase, Y.Kubo

    Appl. Phys. Lett.   53 ( 14 )   1341 - 1342   1988

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  • Protonic Conduction in Oxide Glasses: Simple relations between elecrical conductivity, activation energy, and the O-H bonding state

    Y.Abe, H.Hosono, Y.Ohta L.L.Hench

    Phys.Rev.B   38 ( 14 )   10166 - 10169   1988

  • Two-Photon Processes in Defect Formation by Excimer lasers in Synthetic Silica Glass

    K.Arai H.Imai, H.Hosono, Y.Abe, H.Imagawa

    Appl.Phys.Lett.   53 ( 20 )   1891 - 1893   1988

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  • Two Types of Oxygen-deficient Centers in Synthetic Silica Glass

    H.Imai K.Arai, H.Imagawa, H.Hosono, Y.Abe

    Phys. Rev.B   38 ( 17 )   12772 - 12775   1988

  • UV and VUV Optical Absorption due to Intrinsic and Laser Induced Deffects in Synthetic Silica Glasses, H.Imai

    K.Arai T.Saito, S.Ichimura, H.Nonaka, J, P.Vigouroux, H.Imagawa, H.Hosono, Y.Abe

    Plenum   153 - 60   1988

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  • Photochromism of Reduced calcium Aluminate Glasses

    H.Hosono, Y.Abe

    Mater.Res.Bull.   23 ( 2 )   171 - 176   1988

  • Superconducting Glass-ceramic Rods in BiCaSrCu_2_Ox Prepared by Crystallization under a Temperature Gradient

    Y.Abe, H.Hosono, M.Hosoe, J.Iwase, Y.Kubo

    Appl. Phys. Lett.   53 ( 14 )   1341 - 1342   1988

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  • UV and VUV Optical Absorption due to Intrinsic and Laser Induced Deffects in Synthetic Silica Glasses, H.Imai

    K.Arai T.Saito, S.Ichimura, H.Nonaka, J, P.Vigouroux, H.Imagawa, H.Hosono, Y.Abe

    Plenum   153 - 60   1988

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  • Photochromism of Reduced calcium Aluminate Glasses

    H.Hosono, Y.Abe

    Mater.Res.Bull.   23 ( 2 )   171 - 176   1988

  • Protonic Conduction in Oxide Glasses: Simple relations between elecrical conductivity, activation energy, and the O-H bonding state

    Y.Abe, H.Hosono, Y.Ohta L.L.Hench

    Phys.Rev.B   38 ( 14 )   10166 - 10169   1988

  • Two-Photon Processes in Defect Formation by Excimer lasers in Synthetic Silica Glass

    K.Arai H.Imai, H.Hosono, Y.Abe, H.Imagawa

    Appl.Phys.Lett.   53 ( 20 )   1891 - 1893   1988

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  • Two Types of Oxygen-deficient Centers in Synthetic Silica Glass

    H.Imai K.Arai, H.Imagawa, H.Hosono, Y.Abe

    Phys. Rev.B   38 ( 17 )   12772 - 12775   1988

  • LIGHT-INDUCED OPTICAL-CHANGES IN AMORPHOUS RED PHOSPHORUS

    K KAWASHIMA, H HOSONO, Y ABE, S FUJITSU, H YANAGIDA

    JOURNAL OF NON-CRYSTALLINE SOLIDS   95-6   741 - 748   1987.12

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  • NATURE OF DOPING INTO PURE SILICA GLASS BY PLASMA TORCH CVD

    K ARAI, H NAMIKAWA, Y ISHII, H IMAI, H HOSONO, Y ABE

    JOURNAL OF NON-CRYSTALLINE SOLIDS   95-6   609 - 616   1987.12

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  • An Oxygen-effervescent Aluminate Glass

    H.Hosono, Y.Abe

    J.Amer.Ceram.Soc.   70   C38-39   1987

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  • Photosensitivity and Structural Defects in Dopant-free Ultraviolet-sensitive Calcium Glasses

    H.Hosono, Y.Abe

    J.Non-Cryst.Sol.   95 / 96   717 - 724   1987

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  • Effects of Melting Atmosphere and heat Treatment on the Photosensitivity of Dopant-free, UV-sensitive Calcium Aluminate Glasses

    H.Hosono, Y.Abe

    Defects and Defect Data   53 / 54   139 - 144   1987

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  • Comparison of Calcium Phosphate Glass-ceramics with Apatite Ceramics Implanted in Bone. An Interface Study II,

    C.P.A.T.Klein, Y.Abe, H.Hosono, K.de Groot

    Biomater   8 ( 3 )   234 - 236   1987

  • Development of Calcium Phosphate Glass-ceramics for Surgical and Dental Use

    Y.Abe, H.Hosono, M.Hosoe

    Phos. & Sul.   30   337 - 40   1987

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  • Photosensitive Mechanism of Dopant-free, Ultraviolet-sensitive Calcium Aluminate Glasses

    H.Hosono, K.Yamazaki, Y.Abe

    J.Amer.Ceram.Soc.   70 ( 12 )   870 - 873   1987

  • ガラスの微視的不均質と性質-高純度シリカガラスの点欠陥と真空紫外吸収を例にして-

    細野秀雄, 阿部良弘, 荒井和雄, 今井宏明, 今川宏

    セラミックス   22   1047 - 1051   1987

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  • Comparison of Calcium Phosphate Glass-ceramics with Apatite Ceramics Implanted in Bone. An Interface Study II,

    C.P.A.T.Klein, Y.Abe, H.Hosono, K.de Groot

    Biomater   8 ( 3 )   234 - 236   1987

  • Development of Calcium Phosphate Glass-ceramics for Surgical and Dental Use

    Y.Abe, H.Hosono, M.Hosoe

    Phos. & Sul.   30   337 - 40   1987

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  • Photosensitive Mechanism of Dopant-free, Ultraviolet-sensitive Calcium Aluminate Glasses

    H.Hosono, K.Yamazaki, Y.Abe

    J.Amer.Ceram.Soc.   70 ( 12 )   870 - 873   1987

  • Photosensitive Characteristics of Dopant-free, Ultraviolet-sensitive Calcium Aluminate Glasses

    H.Hosono, K.Yamazaki, Y.Abe

    J.Amer.Ceram.Soc.   70 ( 12 )   867 - 870   1987

  • Photosensitive Characteristics of Dopant-free, Ultraviolet-sensitive Calcium Aluminate Glasses

    H.Hosono, K.Yamazaki, Y.Abe

    J.Amer.Ceram.Soc.   70 ( 12 )   867 - 870   1987

  • Occurrence of Superoxide Radical Ion in Crystalline 12CaO・7AlO_3_ Prepared via Solid-State Reactions

    H.Hosono, Y.Abe

    Inorg.Chem.   26 ( 8 )   1192 - 1195   1987

  • Effect of Crystallization Temperature and Additives on the Orientation Degree of Calcium Phosphate Glass-ceramics Prepared by Unidirectional Crystallization

    H.Hosono, Y.Shimizu, H.Ohsato Y.Abe

    J.Mater.Sci.Lett.   6 ( 4 )   394 - 396   1987

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  • An Oxygen-effervescent Aluminate Glass

    H.Hosono, Y.Abe

    J.Amer.Ceram.Soc.   70   C38-39   1987

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  • Photosensitivity and Structural Defects in Dopant-free Ultraviolet-sensitive Calcium Glasses

    H.Hosono, Y.Abe

    J.Non-Cryst.Sol.   95 / 96   717 - 724   1987

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  • Effects of Melting Atmosphere and heat Treatment on the Photosensitivity of Dopant-free, UV-sensitive Calcium Aluminate Glasses

    H.Hosono, Y.Abe

    Defects and Defect Data   53 / 54   139 - 144   1987

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  • Occurrence of Superoxide Radical Ion in Crystalline 12CaO・7AlO_3_ Prepared via Solid-State Reactions

    H.Hosono, Y.Abe

    Inorg.Chem.   26 ( 8 )   1192 - 1195   1987

  • Effect of Crystallization Temperature and Additives on the Orientation Degree of Calcium Phosphate Glass-ceramics Prepared by Unidirectional Crystallization

    H.Hosono, Y.Shimizu, H.Ohsato Y.Abe

    J.Mater.Sci.Lett.   6 ( 4 )   394 - 396   1987

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  • Reversible Optical Changes of Amorphous Red Phosphorus in Reduced Phosphate Glasses

    H.Hosono, T.Satake, M.Hosoe, Y.Abe

    J.Amer.Ceram.Soc.   68 ( 1 )   7 - 9   1985

  • ESR Study of Radiation Induced Paramagnetic Defect Centers Localized on a Phosphorus in Binary Phosphate Glasses

    H.Hosono, Y.Abe, H.Kawazoe

    J.Non-Cryst.Sol.   71 ( 1/3 )   261 - 267   1985

  • Preferred Molecular Orientation at Crystal Growth Front in Ca(PO_3_)_2_ Glass

    H.Hosono, S.Kawamura, Y.Abe

    J.Mater.Sci.Lett.   4 ( 2 )   244 - 246   1985

  • Paramagnetic Centers Localized on a Phosphorus Ion in Gamma-Irradiated Metaphosphate Glasses

    HOSONO Hideo, ABE Yoshihiro

    Journal of the Ceramic Association, Japan   93 ( 1077 )   217 - 224   1985

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    In this paper paramagnetic centers primarily localized on a phosphorus ion in γ-irradiated glassy and polycrystalline metaphosphates were investigated with ESR. A P4+ having fourfold coordination was observed commonly in the asirradiated (77K) glassy and polycrystalline hosts, being considered to originate from a PO42- group on trapping an electron. On thermal annealing of the as-irradiated glasses, the center was found to be converted into a P4+ with threefoldcoordination with C3v symmetry, detaching an oxygen from its coordination sphere. The driving force of such a structural relaxation is considered to be electrostatic repulsion between an excess electron and lone pair electrons on the oxygens directly attached to the phosphorus.<br>The results obtained in this work are almost identical with those of arsenic (V) in glass (radiation-induced defects in reduced phosphate glasses are to be published in the subsequent paper). The formation of the fourfold-coordinated center observed for both phosphorus and arsenic has never been known for typical NWF such as Si, B and Al. It is suggested that this result is a common characteristic of radiationinduced centers primarily localized on an NWF whose valence is greater than the coordination number; these ions would provide a coulombic trapping potential for an electron.

    DOI: 10.2109/jcersj1950.93.1077_217

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  • Reversible Optical Changes of Amorphous Red Phosphorus in Reduced Phosphate Glasses

    H.Hosono, T.Satake, M.Hosoe, Y.Abe

    J.Amer.Ceram.Soc.   68 ( 1 )   7 - 9   1985

  • Development of High-Strength Calcium Phosphate Glass-Ceramics for Biomaterials Prepared by Unidirectional Crystallization

    46   119 - 129   1985

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  • Dopant-free Ultraviolet-sensitive Calcium Aluminate Glasses

    H.Hosono, K.Yamazaki, Y.Abe

    J.Amer.Ceram.Soc.   68   C304-305   1985

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  • 生体材料を目的とした高強度CaO-P_2_O_5_系一方向結晶化ガラスの開発研究

    阿部良弘, 細江政弘, 細野秀雄

    旭硝子工業奨励会研究報告   46   119 - 129   1985

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  • セラミックスのキャラクタリゼション技術:Ⅱ.8 振動スペクトルの応用

    細野秀雄

    セラミックス   20   700 - 712   1985

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  • Dopant-free Ultraviolet-sensitive Calcium Aluminate Glasses

    H.Hosono, K.Yamazaki, Y.Abe

    J.Amer.Ceram.Soc.   68   C304-305   1985

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  • ESR Study of Radiation Induced Paramagnetic Defect Centers Localized on a Phosphorus in Binary Phosphate Glasses

    H.Hosono, Y.Abe, H.Kawazoe

    J.Non-Cryst.Sol.   71 ( 1/3 )   261 - 267   1985

  • Preferred Molecular Orientation at Crystal Growth Front in Ca(PO_3_)_2_ Glass

    H.Hosono, S.Kawamura, Y.Abe

    J.Mater.Sci.Lett.   4 ( 2 )   244 - 246   1985

  • Paramagnetic Centers Localized on a Phosphorus Ion in g-irradiated Metaphosphate Glasses

    H.Hosono, Y.Abe

    J.Ceram.Soc.Jpn.   93 ( 1077 )   217 - 224   1985

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    In this paper paramagnetic centers primarily localized on a phosphorus ion in γ-irradiated glassy and polycrystalline metaphosphates were investigated with ESR. A P4+ having fourfold coordination was observed commonly in the asirradiated (77K) glassy and polycrystalline hosts, being considered to originate from a PO42- group on trapping an electron. On thermal annealing of the as-irradiated glasses, the center was found to be converted into a P4+ with threefoldcoordination with C3v symmetry, detaching an oxygen from its coordination sphere. The driving force of such a structural relaxation is considered to be electrostatic repulsion between an excess electron and lone pair electrons on the oxygens directly attached to the phosphorus.<br>The results obtained in this work are almost identical with those of arsenic (V) in glass (radiation-induced defects in reduced phosphate glasses are to be published in the subsequent paper). The formation of the fourfold-coordinated center observed for both phosphorus and arsenic has never been known for typical NWF such as Si, B and Al. It is suggested that this result is a common characteristic of radiationinduced centers primarily localized on an NWF whose valence is greater than the coordination number; these ions would provide a coulombic trapping potential for an electron.

    DOI: 10.2109/jcersj1950.93.1077_217

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  • Solarization Mechanism of Glass Containing Ce^3+^ and As^5+^,

    H.Hosono, Y.Abe, H.Kawazoe, H.Imagawa

    J.Non-Cryst.Sol.   63 ( 3 )   357 - 363   1984

  • DIFFERENT CALCIUM-PHOSPHATE BIOGLASS CERAMICS IMPLANTED IN RABBIT CORTICAL BONE - AN INTERFACE STUDY

    CPAT KLEIN, Y ABE, H HOSONO, K DEGROOT

    BIOMATERIALS   5 ( 6 )   362 - 364   1984

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  • Preparation of High-Strength Calcium Phosphate Glass-ceramics by Unidirectional Crystallization

    Y.Abe T.Kasuga, H.Hosono, K. de Groot

    J.Amer.Ceram.Soc.   67   C142-144   1984

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  • ESR Lineshape of Cu^2+^ and γ-induced Cd^+^ in Soda Borate Glasses

    H.Hosono, Y.Abe, H.Kawazoe, T.Kanazawa

    J.Ceram.Soc.Jpn.   92   350 - 359   1984

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  • Solarization Mechanism of Glass Containing Ce^3+^ and As^5+^,

    H.Hosono, Y.Abe, H.Kawazoe, H.Imagawa

    J.Non-Cryst.Sol.   63 ( 3 )   357 - 363   1984

  • Preparation of High-Strength Calcium Phosphate Glass-ceramics by Unidirectional Crystallization

    Y.Abe T.Kasuga, H.Hosono, K. de Groot

    J.Amer.Ceram.Soc.   67   C142-144   1984

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  • ESR Lineshape of Cu^2+^ and γ-induced Cd^+^ in Soda Borate Glasses

    H.Hosono, Y.Abe, H.Kawazoe, T.Kanazawa

    J.Ceram.Soc.Jpn.   92   350 - 359   1984

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  • ESR of Cd+ as a Sensitive Monitor for Detecting Structural Change Around Divalent cations

    H.Kawazoe, Y.Yoneda, T.Kanazawa, H.Hosono, Y.Abe

    Glas Tech.Ber.   56K   886 - 891   1983

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  • 強靭性リン酸カルシウム一方向結晶化ガラスの開発

    阿部良弘, 絞頁正美, 細江政弘, 細野秀雄

    整形外科インプラント   3   27 - 43   1983

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  • Photochemical Reaction in a Reduced Soda-Lime-Silica Glass Containing Ce^3+^ and As^3+^

    H.Hosono, Y.Abe, H.Kawazoe, H.Imagawa

    J.Amer.Ceram.Soc.   66   C192-193   1983

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  • ESR of Cd+ as a Sensitive Monitor for Detecting Structural Change Around Divalent cations

    H.Kawazoe, Y.Yoneda, T.Kanazawa, H.Hosono, Y.Abe

    Glas Tech.Ber.   56K   886 - 891   1983

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  • Photochemical Reaction in a Reduced Soda-Lime-Silica Glass Containing Ce^3+^ and As^3+^

    H.Hosono, Y.Abe, H.Kawazoe, H.Imagawa

    J.Amer.Ceram.Soc.   66   C192-193   1983

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  • Elucidation of the Stereochemistry of Tl^+^ in Oxide Glasses by Electron Spin Resonance Spectroscopy

    H.Hosono, H.Kawazoe, J.Nishii T.Kanazawa

    J.Non-Cryst.Sol.   51 ( 2 )   217 - 240   1982

  • Effect of Quenching Rate and Annealing on the ESR of Cu^2+^ and γ -Induced Cd^+^ in Low Alkali Borate Glasses

    H.Hosono, H.Kawazoe, T.Kanazawa

    J.Non-Cryst.Sol.   55 ( 1 )   3 - 14   1982

  • Photon-induced ESR Centers Associated with p-Block Elements in Oxide Glasses

    H.Kawazoe, H.Hosono, J.Nishii

    J.Non-Cryst.Sol.   52 ( 1/3 )   129 - 133   1982

  • ESR Detection of Pressure-induced Structural Changes Around Pb^2+^ and Cd^2+^ in Soda Borate Glasses

    H.Hosono, H.Kawazoe, T.Kanazawa

    Solid State Commun.   43 ( 10 )   769 - 771   1982

  • Coordination of Pb^<2+> in Oxide Glasses Determined by ESR and Properties of Binary Lead Glasses

    HOSONO Hideo, KAWAZOE Hiroshi, KANAZAWA Takafumi

    Journal of the Ceramic Association, Japan   90 ( 1045 )   544 - 551   1982

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    ESR spectra of paramagnetic Pb3+ with 6s1 electronic configuration induced by γ-irradiation at 77K were measured for a wide variety of oxide glasses. It has been found that the Pb 6s-character of the magnetic electron, evaluated from the analysis of the hyperfine structure due to a 207Pb nucleus (nuclear spin 1/2, abundance 21.7%) highly depends on the stereochemistry of precursor Pb2+, i.e., the s-character of the Pb3+ produced from Pb2+ having a nearly spherical-symmetric ligand field (coordination I) is fairly greater than that produced from Pb2+ with a trigonal- or tetragonal-pyramidal ligand field (coordination II). The determination of stereochemistry of Pb2+ in oxide glasses has been attempted by measuring ESR spectra of as-induced Pb3+ and by using the relation between the s-character of Pb3+ and the coordination of Pb2+ (i.e., coordination I or II). The results obtained are summarized as follows:<br>(1) In phosphate glasses and low alkali borate glasses, most of Pb2+'s exist in coordination I.<br>(2) Lead ions take predominantly coordination II in silicate and high alkali borate glasses. The relation has been also considered between the properties of binary lead glasses and the stereochemistry of Pb2+. A marked difference of limiting PbO concentrations for glass-formation in phosphate system from those in silicate and borate systems has been interpreted by considering the dissimilarity of the Pb2+-coordination structure. It has been found for binary silicate, borate and phosphate glasses that the partial molar refractivity of PbO increases with decreasing the s-character of Pb3+. This relation leads to a conclusion that the polarizability of Pb2+ taking coordination II is considerably greater than that having coordination I.

    DOI: 10.2109/jcersj1950.90.1045_544

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  • Solution of Spin-Hamiltonian with Orthorhombic hf and g Tensors ( I = S = 1/2 ). II. Application to PO44- and Tl^2+^ Centers in Anisotropic Matrices

    H.Kawazoe, H.Hosono, J.Nishii T.Kanazawa

    J.Chem.Phys.   76 ( 7 )   3429 - 3432   1982

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  • Solution of Spin-Hamiltonian with Orthorhombic hf and g Tensors ( I = S = 1/2 ). I. Theory

    H.Kawazoe, H.Hosono, J.Nishii

    J.Chem.Phys.   76 ( 7 )   3422 - 3428   1982

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  • Detection and Analysis of Anisotropic Tl^2+^ Centers in Glass

    H.Hosono, H.Kawazoe, T.Kanazawa

    J.Phys.Chem.   86 ( 2 )   161 - 164   1982

  • ESR Studies on Stereochemistry of Thallous Ion in Oxide Glasses

    H.Hosono, Y.Abe, H.Kawazoe

    J de Phys.   43   C9-159-63   1982

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  • Elucidation of the Stereochemistry of Tl^+^ in Oxide Glasses by Electron Spin Resonance Spectroscopy

    H.Hosono, H.Kawazoe, J.Nishii T.Kanazawa

    J.Non-Cryst.Sol.   51 ( 2 )   217 - 240   1982

  • ESR Studies of Arsenic-associated Centers in Oxide Glasses Produced by Gamma-Irradiation

    H.Imagawa, H.Hosono, H.Kawazoe

    J de Phys.   43   C9-169-172   1982

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  • Effect of Quenching Rate and Annealing on the ESR of Cu^2+^ and γ -Induced Cd^+^ in Low Alkali Borate Glasses

    H.Hosono, H.Kawazoe, T.Kanazawa

    J.Non-Cryst.Sol.   55 ( 1 )   3 - 14   1982

  • Photon-induced ESR Centers Associated with p-Block Elements in Oxide Glasses

    H.Kawazoe, H.Hosono, J.Nishii

    J.Non-Cryst.Sol.   52 ( 1/3 )   129 - 133   1982

  • ESR Detection of Pressure-induced Structural Changes Around Pb^2+^ and Cd^2+^ in Soda Borate Glasses

    H.Hosono, H.Kawazoe, T.Kanazawa

    Solid State Commun.   43 ( 10 )   769 - 771   1982

  • Coordination of Pb^2+^ in Oxide Glasses Determined by ESR and Properties of Binary Lead Glasses

    H.Hosono, H.Kawazoe, T.Kanazawa

    J.Ceram.Soc.Jpn.   90 ( 1045 )   544 - 551   1982

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    ESR spectra of paramagnetic Pb3+ with 6s1 electronic configuration induced by γ-irradiation at 77K were measured for a wide variety of oxide glasses. It has been found that the Pb 6s-character of the magnetic electron, evaluated from the analysis of the hyperfine structure due to a 207Pb nucleus (nuclear spin 1/2, abundance 21.7%) highly depends on the stereochemistry of precursor Pb2+, i.e., the s-character of the Pb3+ produced from Pb2+ having a nearly spherical-symmetric ligand field (coordination I) is fairly greater than that produced from Pb2+ with a trigonal- or tetragonal-pyramidal ligand field (coordination II). The determination of stereochemistry of Pb2+ in oxide glasses has been attempted by measuring ESR spectra of as-induced Pb3+ and by using the relation between the s-character of Pb3+ and the coordination of Pb2+ (i.e., coordination I or II). The results obtained are summarized as follows:<br>(1) In phosphate glasses and low alkali borate glasses, most of Pb2+'s exist in coordination I.<br>(2) Lead ions take predominantly coordination II in silicate and high alkali borate glasses. The relation has been also considered between the properties of binary lead glasses and the stereochemistry of Pb2+. A marked difference of limiting PbO concentrations for glass-formation in phosphate system from those in silicate and borate systems has been interpreted by considering the dissimilarity of the Pb2+-coordination structure. It has been found for binary silicate, borate and phosphate glasses that the partial molar refractivity of PbO increases with decreasing the s-character of Pb3+. This relation leads to a conclusion that the polarizability of Pb2+ taking coordination II is considerably greater than that having coordination I.

    DOI: 10.2109/jcersj1950.90.1045_544

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    Other Link: https://jlc.jst.go.jp/DN/JALC/00194565705?from=CiNii

  • Solution of Spin-Hamiltonian with Orthorhombic hf and g Tensors ( I = S = 1/2 ). II. Application to PO44- and Tl^2+^ Centers in Anisotropic Matrices

    H.Kawazoe, H.Hosono, J.Nishii T.Kanazawa

    J.Chem.Phys.   76 ( 7 )   3429 - 3432   1982

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  • Solution of Spin-Hamiltonian with Orthorhombic hf and g Tensors ( I = S = 1/2 ). I. Theory

    H.Kawazoe, H.Hosono, J.Nishii

    J.Chem.Phys.   76 ( 7 )   3422 - 3428   1982

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  • Detection and Analysis of Anisotropic Tl^2+^ Centers in Glass

    H.Hosono, H.Kawazoe, T.Kanazawa

    J.Phys.Chem.   86 ( 2 )   161 - 164   1982

  • ESR Studies of Radiation-induced Tin Centers in Oxide Glasses

    H.Kawazoe, J.Nishii, H.Hosono, T.Kanazawa, H.Imaggawa

    J de Phys.   43   C9-155-158   1982

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  • ESR Studies of Radiation-induced Tin Centers in Oxide Glasses

    H.Kawazoe, J.Nishii, H.Hosono, T.Kanazawa, H.Imaggawa

    J de Phys.   43   C9-155-158   1982

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  • ESR Studies on Stereochemistry of Thallous Ion in Oxide Glasses

    H.Hosono, Y.Abe, H.Kawazoe

    J de Phys.   43   C9-159-63   1982

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  • ESR Studies of Arsenic-associated Centers in Oxide Glasses Produced by Gamma-Irradiation

    H.Imagawa, H.Hosono, H.Kawazoe

    J de Phys.   43   C9-169-172   1982

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  • ESR of Cu2+and Tl2+ in thallium borate glasses

    Hideo Hosono, Hiroshi Kawazoe, Takafumi Kanazawa

    Journal of Materials Science   16 ( 1 )   57 - 64   1981.1

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    Language:English   Publisher:Kluwer Academic Publishers  

    DOI: 10.1007/BF00552059

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  • Effect of Randomness on ESR Hyperfine Structure of Cd^+^

    H.Hosono, H.Kawazoe, J.Nishii T.Kanazawa

    J.Non-Cryst.Sol.   44 ( 1 )   149 - 155   1981

  • 金属イオンプローブによる酸素酸塩ガラスのキャラクタリゼーション

    金沢孝文, 川副博司, 細野秀雄, 西井準治

    旭硝子工業技術奨励会研究報告   40   25 - 29   1981

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  • Characterization of Oxyanionic Glasses by Metallic Cation Probes.(Part 1) Effects of Randomness on ESR Hyperfine Structure of Cd^+^

    T.Kanazawa, H.Kawazoe, H.Hosono, J.Nishii

    旭硝子工業技術奨励会研究報告   38   99 - 104   1981

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  • Co-ordination of Mg^2+^ in MgO-P_2_O_5_ Glasses

    K.Isozaki, H.Hosono, H.Kokumai, H.Kawazoe, T.Kanazawa

    J.Mater.Sci.   16 ( 8 )   2318 - 2319   1981

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  • Effect of Randomness on ESR Hyperfine Structure of Cd^+^

    H.Hosono, H.Kawazoe, J.Nishii T.Kanazawa

    J.Non-Cryst.Sol.   44 ( 1 )   149 - 155   1981

  • Characterization of Oxyanionic Glasses by Metallic Cation Probes.(Part 1) Effects of Randomness on ESR Hyperfine Structure of Cd^+^

    T.Kanazawa, H.Kawazoe, H.Hosono, J.Nishii

    旭硝子工業技術奨励会研究報告   38   99 - 104   1981

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  • Co-ordination of Mg^2+^ in MgO-P_2_O_5_ Glasses

    K.Isozaki, H.Hosono, H.Kokumai, H.Kawazoe, T.Kanazawa

    J.Mater.Sci.   16 ( 8 )   2318 - 2319   1981

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  • Micro-heterogeneities in R_2_O-RO-B_2_O_3_ Glasses

    H.Kawazoe, H.Kokumai, H.Hosono, T.Kanazawa

    J.Non-Cryst.Sol.   38 / 39   717 - 722   1980

  • ESR Spectra of Pb^3+^ and Ag0 in Glass

    H.Hosono, J.Nishii, H.Kawazoe, T.Kanazawa

    J.Phys.Chem.   84 ( 18 )   2316 - 2319   1980

  • ESR of Vanadyl Ions in Phosphate Glasses

    H.Hosono, H.Kawazoe, T.Kanazawa

    J.Non-Cryst.Sol.   37 ( 3 )   427 - 432   1980

  • Structural Distribution and Rigidity of the Glass Network Determined by EPR of Cu^2+^

    H.Kawazoe, H.Hosono, H.Kokumai, J.Nishii T.Kanazawa

    J.Non-Cryst.Sol.   40 ( 1/3 )   291 - 303   1980

  • Micro-heterogeneities in R_2_O-RO-B_2_O_3_ Glasses

    H.Kawazoe, H.Kokumai, H.Hosono, T.Kanazawa

    J.Non-Cryst.Sol.   38 / 39   717 - 722   1980

  • ESR Spectra of Pb^3+^ and Ag0 in Glass

    H.Hosono, J.Nishii, H.Kawazoe, T.Kanazawa

    J.Phys.Chem.   84 ( 18 )   2316 - 2319   1980

  • ESR of Vanadyl Ions in Phosphate Glasses

    H.Hosono, H.Kawazoe, T.Kanazawa

    J.Non-Cryst.Sol.   37 ( 3 )   427 - 432   1980

  • Structural Distribution and Rigidity of the Glass Network Determined by EPR of Cu^2+^

    H.Kawazoe, H.Hosono, H.Kokumai, J.Nishii T.Kanazawa

    J.Non-Cryst.Sol.   40 ( 1/3 )   291 - 303   1980

  • ESR-Detection of Immiscibility in K_2_O-BaO-B_2_O_3_ Glasses

    H.Kawazoe, H.Hosono, T.Kanazawa

    J.Ceram.Soc.Jpn.   87 ( 1005 )   237 - 241   1979

  • Behavior of VO^2+^ as a Spectroscopic Probe for Characterization of Glasses

    H.Hosono, H.Kawazoe, T.Kanazawa

    J.Non-Cryst.Sol.   33 ( 1 )   125 - 129   1979

  • ESR and Optical Absorption of Cu^2+^ in Na_2_O-SiO_2_ Glasses

    H.Hosono, H.Kawazoe, T.Kanazawa

    J.Non-Cryst.Sol.   33   103 - 115   1979

  • ESR and Optical Absorption of Cupric Ion in Borate Glasses

    H.Hosono, H.Kawazoe, T.Kanazawa

    J.Non-Cryst.Sol.   34 ( 3 )   339 - 356   1979

  • Behavior of VO^2+^ as a Spectroscopic Probe for Characterization of Glasses

    H.Hosono, H.Kawazoe, T.Kanazawa

    J.Non-Cryst.Sol.   33 ( 1 )   125 - 129   1979

  • ESR and Optical Absorption of Cu^2+^ in Na_2_O-SiO_2_ Glasses

    H.Hosono, H.Kawazoe, T.Kanazawa

    J.Non-Cryst.Sol.   33   103 - 115   1979

  • ESR-Detection of Immiscibility in K_2_O-BaO-B_2_O_3_ Glasses

    H.Kawazoe, H.Hosono, T.Kanazawa

    J.Ceram.Soc.Jpn.   87 ( 1005 )   237 - 241   1979

  • 金属イオンプローブ法による酸素酸塩ガラスのキャラクタリゼーション

    川副博司, 細野秀雄, 金澤孝文

    窯業協会誌   87   1 - 12   1979

  • ESR and Optical Absorption of Cupric Ion in Borate Glasses

    H.Hosono, H.Kawazoe, T.Kanazawa

    J.Non-Cryst.Sol.   34 ( 3 )   339 - 356   1979

  • Electronic Structure and Properties of Oxide Glasses (II) Basicity measured by Cu^2+^ ion probe in Na_2_O-P_2_O_5_, K_2_O-B_2_O_3_ and K_2_SO_4_-ZnSO_4_ glasses

    H.Kawazoe, H.Hosono, T.Kanazawa

    J.Non-Cryst.Sol.   29 ( 2 )   173 - 186   1978

  • Optical Absorption of Ni (II) complex in Na_2_O-K_2_O-SiO_2_ Glasses and Change in the Coordination of the Complex upon Annealing

    H.Kawazoe, H.Hosono, T.Kanazawa

    J.Ceram.Soc.Jpn.   86   567 - 569   1978

  • The Formation of Trapped Electron upon the Thermal Dehydration-Condensation of Hydrated Hydrogenorthophosphate

    H.Kawazoe, M.Nishino, H.Hosono, K.Isozaki K.Ametani, M.Imai T.Kanazawa

    Bull.Chem.Soc.Jpn.   51 ( 10 )   2882 - 2885   1978

  • Electronic Structure and Properties of Oxide Glasses, (I) p-Electron distribution on alkali borate glass networks

    H.Kawazoe, H.Hosono, T.Kanazawa

    J.Non-Cryst.Sol.   29 ( 2 )   159 - 171   1978

  • Optical Absorption of Ni (II) complex in Na_2_O-K_2_O-SiO_2_ Glasses and Change in the Coordination of the Complex upon Annealing

    H.Kawazoe, H.Hosono, T.Kanazawa

    J.Ceram.Soc.Jpn.   86   567 - 569   1978

  • The Formation of Trapped Electron upon the Thermal Dehydration-Condensation of Hydrated Hydrogenorthophosphate

    H.Kawazoe, M.Nishino, H.Hosono, K.Isozaki K.Ametani, M.Imai T.Kanazawa

    Bull.Chem.Soc.Jpn.   51 ( 10 )   2882 - 2885   1978

  • ESR Detection of Immiscibility in K_2_O-CaO-B_2_O_3_ Glasses

    H.Kawazoe, H.Hosono, T.Kanazawa

    J.Non-Cryst.Sol.   29 ( 2 )   249 - 252   1978

  • Electronic Structure and Properties of Oxide Glasses (II) Basicity measured by Cu^2+^ ion probe in Na_2_O-P_2_O_5_, K_2_O-B_2_O_3_ and K_2_SO_4_-ZnSO_4_ glasses

    H.Kawazoe, H.Hosono, T.Kanazawa

    J.Non-Cryst.Sol.   29 ( 2 )   173 - 186   1978

  • Electronic Structure and Properties of Oxide Glasses, (I) p-Electron distribution on alkali borate glass networks

    H.Kawazoe, H.Hosono, T.Kanazawa

    J.Non-Cryst.Sol.   29 ( 2 )   159 - 171   1978

  • ESR Detection of Immiscibility in K_2_O-CaO-B_2_O_3_ Glasses

    H.Kawazoe, H.Hosono, T.Kanazawa

    J.Non-Cryst.Sol.   29 ( 2 )   249 - 252   1978

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    2007 Int. Conf. Solid State Devices and Materials (SSDM'07) Rump Session "Oxide Electronics -Status and Outlook-"  2007 

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    2007年秋季 第68回応用物理学会学術講演会  2007 

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    産業技術連携推進会議 ナノテクノロジー・材料部会セラミックス分科会 総会  2007 

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    2007年秋季 第68回応用物理学会学術講演会  2007 

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    2007年秋季 第68回応用物理学会学術講演会  2007 

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    2007年秋季 第68回応用物理学会学術講演会  2007 

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    2007年秋季 第68回応用物理学会学術講演会  2007 

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    電子協 ナノエレクトロニクス技術分科会 第1回委員会  2007 

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    高分子同友会研究会  2007 

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    21th International Congress on Glass  2007 

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    European Mater. Res. Soc. Symp. Spring Meeting  2007 

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    E-MRS 2007 Spring Meeting  2007 

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    5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2007 

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    第54回応用物理学関係連合講演会  2007 

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  • Fe系層状超伝導体LaOFeP

    第54回応用物理学関係連合講演会  2007 

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  • イオン性アモルファス酸化物a-In-Ga-Zn-O系における局所構造とキャリア輸送特性の関係

    第54回応用物理学関係連合講演会  2007 

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  • イオン性アモルファス酸化物a-In-Ga-Zn-Oにおける裾状態とキャリア輸送特性

    第54回応用物理学関係連合講演会  2007 

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  • Zn-In-O系薄膜を用いた電界効果トランジスタとその組成依存性

    第54回応用物理学関係連合講演会  2007 

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  • イオン性アモルファス酸化物半導体Sn-Ga-Zn-O TFTの作製と熱処理効果

    第54回応用物理学関係連合講演会  2007 

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  • 新規ワイドギャップ半導体LaZnOPの電気・光特性

    第54回応用物理学関係連合講演会  2007 

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  • 室温成長可能なp型半導体薄膜の探索 -銅含有カルコゲナイド薄膜のキャリア輸送特性-

    第54回応用物理学関係連合講演会  2007 

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  • 層状オキシアンチモナイドLnZnOSb(Ln=La,Ce)の合成と電気的性質の評価

    第54回応用物理学関係連合講演会  2007 

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  • C12A7:e-/Alq_3_界面の電子注入特性と閾値電圧の低電圧化

    第54回応用物理学関係連合講演会  2007 

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  • Electrode Materials for Low Electron/Hole Injection Barrier Formation in OLED

    IDW'07  2007 

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  • X-ray photoemission study of ultrathin MgO flim

    STAC3  2009 

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  • Controlling of the growth mode of metastable MgO(111) ultrathin film by using metallic substrates

    STAC3  2009 

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  • Characterization of MgO(111) thin films grown on Al2O3(0001)substrates

    STAC3  2009 

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  • Interface Engineering of MgO and Al2O3 by Pulsed Laser Deposition

    STAC3  2009 

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  • Low Temperature Oxidation of Si Using Novel Ceramic Atomic Oxygen Source

    The Third International Conference on the Science and Technology for Advanced Ceramics (STAC-3)  2009 

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  • Metal-insulator and superconducting transitions of 12CaO窶「7Al2O3 electride with a nano-cage structure

    Ext. Abstract of the 26th Int. Japan-Korea Seminar on Ceramics  2009 

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  • 静電不安定性を持つMgO(111)超薄膜の作製と評価

    (社)日本物理学会 第64回年次大会  2009 

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  • Al2O3(0001) 基板上に成長させた MgO(111) 薄膜の評価

    (社)応用物理学会 2009年春季 第56回応用物理学関係連合講演会  2009 

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  • 導電性基板を用いた MgO(111) 極薄膜の成長モードの制御

    (社)応用物理学会 2009年春季 第56回応用物理学関係連合講演会  2009 

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  • MgO 超薄膜のX線光電子分光

    (社)応用物理学会 2009年春季 第56回応用物理学関係連合講演会  2009 

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  • Photoluminescence study of difuusion and reactions of 18O-labeled interstitial oxygen molecules in amorphous SiO2

    ECS TRansactions  2009 

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  • Amorphous oxide semiconductor: Factors determining TFT performance and stability

    9th Int. Meeting on Inf. Display (IMID2009)  2009 

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  • Defects and doping in amorphous oxide semiconductor studied by first-principles calculations

    Ext. Abstract of the 26th Int. Japan-Korea Seminar on Ceramics  2009 

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  • Electronic structures of defects and impurities in layered mixed anion compounds

    Ext. Abstract of the 26th Int. Japan-Korea Seminar on Ceramics  2009 

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  • Impact of Subgap States on Peculiar Characteristics of Amorphous Oxide Thin-Film Transistor

    Proc. IDW'09  2009 

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  • Two Families of New Superconductors Discovered in our Materials Reseach on Transparent Oxide Semiconductors

    2009 

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  • Low Temperature Oxidation of Si Using Novel Ceramic Atomic Oxygen Source

    The Third International Conference on the Science and Technology for Advanced Ceramics (STAC-3)  2009 

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  • Reducing Power of Hydride Ion-or Electron-Doped Mayenites Dissolved in Water

    The Third International Conference on the Science and Technology for Advanced Ceramics (STAC-3)  2009 

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  • Oxide Ion Conductivity in Single Crystalline 12CaO・7Al2O3: the Effect of Incorporated Anions

    The Third International Conference on the Science and Technology for Advanced Ceramics (STAC-3)  2009 

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  • What have been clarified for amorphous oxide semiconductors?

    IDMC窶「3DSA窶「Asia Display'09  2009 

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  • Metal-insulator and superconducting transitions of 12CaO窶「7Al2O3 electride with a nano-cage structure

    Ext. Abstract of the 26th Int. Japan-Korea Seminar on Ceramics  2009 

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  • X-ray photoemission study of ultrathin MgO flim

    STAC3  2009 

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  • Controlling of the growth mode of metastable MgO(111) ultrathin film by using metallic substrates

    STAC3  2009 

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  • Characterization of MgO(111) thin films grown on Al2O3(0001)substrates

    STAC3  2009 

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  • Interface Engineering of MgO and Al2O3 by Pulsed Laser Deposition

    STAC3  2009 

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  • C12A7+活性アニオン=電子機能材料

    日本セラミックス協会 年会特別企画「元素戦略」 国家プロジェクト“元素戦略”  2007 

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  • 材料科学は元素戦略で何ができるか

    パネルディスカッション:NIMS元素戦略シンポジウム  2007 

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  • ワイドギャップ酸化物の特徴を活かした光電子デバイスと電子構造

    テクノ・シンポジウム名大 「酸化物の科学の新しい展開」  2007 

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  • 透明電子活性酸化物:セラミックスの新しいフロンティア

    3大学3研究所連携プロジェクト 公開討論会「金属ガラス・無機材料新接合技術と先進材料創製」  2007 

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  • ありふれた元素の底力:持続社会のための新材料

    日本化学会年会  2007 

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  • CZ法による12CaO7Al2O3単結晶の育成

    第54回応用物理学関係連合講演会  2007 

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  • 透明アモルファス酸化物半導体:物質設計、電子輸送、デバイス応用

    日本学術振興会 第147委員会  2007 

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  • 透明酸化物半導体:最近の進歩

    日本学術振興会 第131委員会  2007 

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  • 点欠陥の制御によるシリカガラスの真空紫外域透明化

    日本セラミックス協会2007年年会  2007 

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  • Room temperature stable electride and its application to the cathod in OLED

    Asia Display 2007 International Conference  2007 

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  • Frontier of Recent Progress in Transparent Oxide Semiconductors: New Materials and Device Application

    The 31st International Cocoa Beach Conference & Expositrion on Advanced Ceramics and Compsoites  2007 

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  • 活性アニオンを活用した透明酸化物の機能開拓

    学術創成研究「活性アニオンを活用した透明酸化物の機能開拓」中間報告(日本学術振興会 第166委員会  2007 

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  • 第一原理計算によるAu/ZnO界面の電子構造

    第45回セラミックス基礎科学討論会  2007 

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  • 光電子分光法を用いた透明導電性酸化物電極/有機半導体界面の電子構造の観察

    第45回セラミックス基礎科学討論会  2007 

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  • 透明電子活性材料:研究の動機と経緯

    愛知県若手研究者奨励事業第1回「わかしゃち奨励賞」優秀賞発表  2007 

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  • 材料ユビキタス元素戦略

    元素戦略/希少金属代替材料開発 府省連携シンポジウム  2007 

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  • Room temperature stable electride : synthesis, properties, electronic structure, and application

    The 5th International Symposium on exploring new science by bridging particle-matter hierarchy  2007 

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  • Transparent Amorphous Oxide Semiconductors for High Performance TFT

    Proceedings of SID'07  2007 

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  • Vibrational Dynamics and Oxygen Diffusion in a Nanoporous Oxide Ion Conductor 12CaOa7Al_2_O_3_ Studied by 18O Labeling and icro-Raman Spectroscopy

    J. Phys. Chem. C 2007  2007 

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  • Temperature Dependence of the Chemical Potential in NaxCoO_2_: Implications for the Large Thermoelectric Power

    J. Phys. Soc. Jpn.  2007 

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  • Electronic structures of oxygen defect and hydrogen in amorphous oxide semiconductor, a-In-Ga-Zn-O

    The 34th International Symposium on Compound Semiconductors  2007 

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  • Recent progress in amorphous oxide semiconductor: From structure, carrier transport to TFT performance

    Oxide TFT Workshop  2007 

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  • Superconducting cement:ceramics renaissance through nanotechnology

    Symposium of Bio and Material COE Frontier  2007 

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  • Electrode Materials for Low Electron/Hole Injection Barrier Formation in OLED

    IDW'07  2007 

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  • Amorphous In-Ga-Zn-O based TFTs and Circuits

    The 14th International Display Workshop (IDW'07)  2007 

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  • Electron emission characteristics of hydrogen doped 12CaO7Al_2_O_3_ electride for PDP

    The 14th International Display Workshop (IDW'07)  2007 

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  • Oxygen Ion Conduction in 12CaO7Al_2_O_3_

    The 2nd International Conference on Physics of Solid State Ionics  2007 

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  • Hydrogen Permeability ofTangsten Phosphate Glass Thin Films Fabricated by Pulsed Laser Deposition

    The 2nd International Conference on Physics of Solid State Ionics  2007 

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  • Photoelectron Spectroscopic Study of C12A7:e- Cathode/Alq3 and LaCuOSe Anode/NPB Interfaces: Formation of Low Carrier Injection Barriers for OLEDs

    The 34th International Symposium on Compound Semiconductors  2007 

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  • Carrier transport properties and heavy hole doping of widegap p-type layered oxychalcogenides, LaCuOCh (Ch = chalcogen)

    The 34th International Symposium on Compound Semiconductors  2007 

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  • Relationship of carrier transport properties, local atomic configuration and tails states in ionic amorphous semiconductor, In-Ga-Zn-O

    The 34th International Symposium on Compound Semiconductors  2007 

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  • Variation of infrared absorption cross sections of hydrogen-bonded silanol groups in silica modified by vacuum-UV photons

    21th International Congress on Glass  2007 

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  • Transparent Amorphous Oxide Semiconductors for High Performace Flexible TFTs

    KAIST-EMDEC Seminar  2007 

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  • Recent Advances in TAOS-TFT

    7th International Meeting on Information Display  2007 

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  • Thin film and bulk fabrication of room temperature-stable electride C12A7:e- by crystallization of amorphous 12CaO7Al_2_O_3_(C12A7)

    22nd International Conference on Amorphopus and Nanocrystalline Semiconductors  2007 

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  • Amorphous Oxide Semiconductor: Advantages, Applications, and The Present Status

    2007 Int. Conf. Solid State Devices and Materials (SSDM'07) Rump Session "Oxide Electronics -Status and Outlook-"  2007 

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  • The Present Status of Amorphous Oxide Semiconductors: Carrier Transport, Electronic Structure, and Device Applications

    International 21st Century COE Symposium on Atomistic Fabrication Technology  2007 

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  • Unique metallic state realized in refractory oxide 12CaO.7Al_2_O_3_ with nano-porous crystal structure

    7nd NIMS Japan-France Workshop on Nanotechnology  2007 

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  • Transparent Amorphous Oxide Semiconductors; Materials Design Concept and Device Applications

    The 34th International Conference on Compound Semiconductors  2007 

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  • RT-stable electrides for display applications

    International Display Manufacturing Conference & Exhibition  2007 

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  • Oxide Semiconductors for Low-T TFTs: Fabrication, Transport properties, electronic structures and device characteristics

    2007 The Fourteenth Internaiontla Workshop on Active-Matrix Flatpanel Displays and Devices -TFT Technologies and Related Materials  2007 

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  • Function Cultivation in Transparent Oxide Utilizing built-in nanostructure

    ICYS-ICMR Summer School  2007 

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  • Effects of thermal annealing and structural relaxation on carrier transport and optical properties in ionic amorphous semiconductors In-Ga-Zn-O

    European Mater. Res. Soc. Symp. Spring Meeting  2007 

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  • Interface electronic structures of transparent oxide semiconductors and metals: First-principle study

    European Mater. Res. Soc. Symp. Spring Meeting  2007 

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  • Cutivation of electronic function in transparent oxides

    10th international Conference and Exhibition of the European Ceramics Society  2007 

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  • New frontier in oxides and related compounds

    Materials 2007  2007 

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  • Transparent p-Type Semiconductors: Layered Oxychalcogenides

    Transparent p-Type Semiconductors: Layered Oxychalcogenides; 10th International Conference and Exhibition of the European Ceramic Society  2007 

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  • Cultivation of Electronic Functions in Transparent Oxides

    10th International Conference and Exhibition of the European Ceramic Society  2007 

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  • Uniformity and integrated circuits of amorphous oxide channel TFTs

    European Mater. Res. Soc. Symp. Spring Meeting  2007 

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  • New Type Oxide Semiconductors

    14th International Symposiumon Intercalation Compounds  2007 

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  • Zn-In-O based thin-film transistors: Compositional dependence

    European Mater. Res. Soc. Symp. Spring Meeting  2007 

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  • Effects of thermal annealing on amorphous oxide semiconductor Sn-Ga-Zn-O based TFTs

    European Mater. Res. Soc. Symp. Spring Meeting  2007 

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  • Interfacial electronic structure and electron injection property at C12A7:e- cathode/Alq3 interface

    European Mater. Res. Soc. Symp. Spring Meeting  2007 

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  • Fabrication of ScAlMgO4 single-crystalline thin films and application to lattice-matched buffer layer for ZnO and GaN

    5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2007 

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  • Relationship between In-In distance and Electron Mobility in Ionic Amorphous Semiconductor In-Ga-Zn-O

    5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2007 

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  • Heteroepitaxial growth of layered semiconductors, LaZnOPn (Pn = P, As)

    5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2007 

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  • Control of carrier concentration in CuGaO_2_ epitaxial film for p-channel transparent transistor

    5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2007 

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  • Specific contact resistances between amorphous oxide semiconductor In-Ga-Zn-O and metallic electrodes

    5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2007 

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  • Formation of low carrier injection barrier at C12A7:e- cathode?Alq3 and LaCuOSe anode/NPB interfaces studied by photoelectron spectroscopy

    5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2007 

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  • Exploration of p-type semiconductor films depositable at room temperature . Carrier transport properties of copper-containing chalcogenide films

    European Mater. Res. Soc. Symp. Spring Meeting  2007 

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  • Carrier transport properties of copper-containing chalcogenide thin films deposited at room temperature

    5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2007 

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  • Hydrogen Permeability of Tungsten Phosphate Glass Thin Films

    STAC-JTMC  2007 

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  • New superconductor LaNiOP with layered structure

    STAC-JTMC  2007 

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  • New ferromagnetic metal with layered crystal structure: LaCoOP

    STAC-JTMC  2007 

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  • Growth of 12CaO7Al_2_O_3_ Single Crystal

    5th International Symposium on Transparent Oxide Thin Films for Electronics and Optics  2007 

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  • Metal-Insulator Transition in a Lime-Alumina Compound with Nanoporous Structure

    STAC-JTMC  2007 

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  • Transparent Amorphous Oxide Semiconductors for High Performance TFT's

    SID 2007 International Sumposium  2007 

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  • Coordination around rare-earth ion in doped silica glasses: elucidation of co-doping effects

    E-MRS  2007 

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  • Factors controlling electron transport properties in transparent amorphous oxide

    semiconductors,22nd International Conference on Amorphopus and Nanocrystalline Semiconductors  2007 

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  • Electronic structures of oxide - metal / organic heterointerfaces

    STAC-JTMC  2007 

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  • Frontier of Recent Progress in Transparent Oxide Semiconductors: New Materials and Device Application

    The 31st International Cocoa Beach Conference & Expositrion on Advanced Ceramics and Compsoites  2007 

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  • Room temperature stable electride : synthesis, properties, electronic structure, and application

    The 5th International Symposium on exploring new science by bridging particle-matter hierarchy  2007 

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  • Room temperature stable electride and its application to the cathod in OLED

    Asia Display 2007 International Conference  2007 

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  • Electron in Glass: transparent amorphous oxide semiconductors and room temperature stable electride glass-ceramics

    International Workshop on Scientific Challenges for New Functionality in Glass  2007 

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  • Interfacial electronic structure and electron injection property at C12A7:e- cathode/Alq3 interface.

    E-MRS 2007 Spring Meeting  2007 

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  • MgO(111) surface prepared on Al2O3(0001) substrates by pulsed laser deposition

    STAC2-STSI1  2008 

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  • 静電不安定性を持つ MgO(111) 薄膜の作製と評価

    2008年秋季(第69回)応用物理学会学術講演会  2008 

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  • Transparent Amorphous Oxide Semiconductors for High Performance TFT

    Proceedings of SID'07  2007 

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  • Vibrational Dynamics and Oxygen Diffusion in a Nanoporous Oxide Ion Conductor 12CaOa7Al_2_O_3_ Studied by 18O Labeling and icro-Raman Spectroscopy

    J. Phys. Chem. C 2007  2007 

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  • Temperature Dependence of the Chemical Potential in NaxCoO_2_: Implications for the Large Thermoelectric Power

    J. Phys. Soc. Jpn.  2007 

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  • Electronic structures of defects and impurities in layered mixed anion compounds

    Ext. Abstract of the 26th Int. Japan-Korea Seminar on Ceramics  2009 

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  • Impact of Subgap States on Peculiar Characteristics of Amorphous Oxide Thin-Film Transistor

    Proc. IDW'09  2009 

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  • Two Families of New Superconductors Discovered in our Materials Reseach on Transparent Oxide Semiconductors

    2009 

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  • Photosensitivity of Amorphous IGZO TFTs for Active-Matrix Flat-Panel Displays

    SID '08 Proc.  2008 

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  • MgO(111) surface prepared on Al2O3(0001) substrates by pulsed laser deposition

    STAC2-STSI1  2008 

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  • Photosensitivity of Amorphous IGZO TFTs for Active-Matrix Flat-Panel Displays

    SID '08 Proc.  2008 

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  • What have been clarified for amorphous oxide semiconductors?

    IDMC窶「3DSA窶「Asia Display'09  2009 

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  • Photoluminescence study of difuusion and reactions of 18O-labeled interstitial oxygen molecules in amorphous SiO2

    ECS TRansactions  2009 

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  • Amorphous oxide semiconductor: Factors determining TFT performance and stability

    9th Int. Meeting on Inf. Display (IMID2009)  2009 

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  • Defects and doping in amorphous oxide semiconductor studied by first-principles calculations

    Ext. Abstract of the 26th Int. Japan-Korea Seminar on Ceramics  2009 

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  • 「講演奨励賞受賞記念講演」MgO(111) 極性薄膜における分極積層の効果

    (社)応用物理学会 2009年秋季 第70回応用物理学会学術講演会  2009 

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  • SrTiO3(111)上に成長させた極性MgO(111)薄膜における基板終端面効果

    (社)応用物理学会 2009年秋季 第70回応用物理学会学術講演会  2009 

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  • パルスレーザー堆積法によるMgO(100)薄膜のホモエピタキシャル成長

    (社)応用物理学会 2009年秋季 第70回応用物理学会学術講演会  2009 

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  • 高温ジルコニア表面からの原子状酸素の直接放出

    応用物理学会2009年秋季 学術講演会  2009 

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  • 固体酸化物を放出源とした真空中への原子状酸素の発生とその照射効果

    応用物理学会2009年秋季 学術講演会  2009 

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  • ストロンチウム・マイエネイト12SrO・7Al2O3に包接される陰イオンの化学状態

    日本セラミックス協会 第22回 秋季シンポジウム  2009 

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  • 水素化物イオン包接による12CaO・7Al2O3の還元力発現と包接濃度定量法の開発

    日本セラミックス協会 第22回 秋季シンポジウム  2009 

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  • Reducing Power of Hydride Ion-or Electron-Doped Mayenites Dissolved in Water

    The Third International Conference on the Science and Technology for Advanced Ceramics (STAC-3)  2009 

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  • Oxide Ion Conductivity in Single Crystalline 12CaO・7Al2O3: the Effect of Incorporated Anions

    The Third International Conference on the Science and Technology for Advanced Ceramics (STAC-3)  2009 

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  • Pt/MgO/Nb:SrTiO3(100)MIS接合の電流電圧特性

    (社)応用物理学会 2009年秋季 第70回応用物理学会学術講演会  2009 

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  • 透明で電気の流れるセラミックス

    富山県 とことん科学セミナー  2007 

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  • Oxygen Ion Conduction in 12CaO7Al_2_O_3_

    The 2nd International Conference on Physics of Solid State Ionics  2007 

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  • Hydrogen Permeability ofTangsten Phosphate Glass Thin Films Fabricated by Pulsed Laser Deposition

    The 2nd International Conference on Physics of Solid State Ionics  2007 

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  • Amorphous In-Ga-Zn-O based TFTs and Circuits

    The 14th International Display Workshop (IDW'07)  2007 

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  • Electron emission characteristics of hydrogen doped 12CaO7Al_2_O_3_ electride for PDP

    The 14th International Display Workshop (IDW'07)  2007 

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  • 材料ユビキタス元素戦略:物質科学の挑戦

    第一回産学連携フォーラム  2007 

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  • アモルファスSn-Ga-Zn-O薄膜トランジスタとそのギャップ内準位に対する熱処理効果

    薄膜材料デバイス研究会 第4回研究集会  2007 

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  • 透明アモルファス酸化物半導体In-Ga-Zn-Oにおける裾状態とキャリア輸送特性

    薄膜材料デバイス研究会 第4回研究集会  2007 

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  • アモルファス酸化物半導体In-Ga-Zn-O / 金属界面の固有接触抵抗

    薄膜材料デバイス研究会 第4回研究集会  2007 

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  • ワイドギャップp型半導体LaCuOSeへの高濃度正孔ドーピングと有機LED正孔注入層への応用

    薄膜材料デバイス研究会 第4回研究集会  2007 

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  • Ni系層状オキシリン化物LaNiOP超伝導体の合成と電気・磁気特性

    2007年秋季 第68回応用物理学会学術講演会  2007 

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  • Superconducting cement:ceramics renaissance through nanotechnology

    Symposium of Bio and Material COE Frontier  2007 

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  • 材料ユビキタス元素戦略

    日本セラミックス協会第26回エレクトロニクスセミナー  2007 

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Industrial property rights

  • 蛍光体

    細野秀雄, 松石聡, 大長 久芳, 四ノ宮 裕, 榎本 公典, 澤 博, 中埜 彰俊

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    Applicant:国立大学法人東京工業大学, 株式会社小糸製作所, 国立大学法人名古屋大学

    Application no:特願2016-158097  Date applied:2016.8

    Announcement no:特開2017-043764  Date announced:2017.3

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  • 二次元ホウ素シートおよびその製造方法

    細野秀雄, 近藤 剛弘, 中村 潤児

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    Applicant:国立大学法人東京工業大学, 国立大学法人筑波大学

    Application no:特願2015-218914  Date applied:2015.11

    Announcement no:特開2016-185899  Date announced:2016.10

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  • シリコン系薄膜半導体装置、およびシリコン系薄膜半導体装置の製造方法

    細野秀雄, 戸田喜丈, 小穴 保久, 渡邉 俊成, 宮川 直通

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    Applicant:国立大学法人東京工業大学, 旭硝子株式会社, エルジー ディスプレイ カンパニー リミテッド(LG Display Co. Ltd.)

    Application no:特願2015-035534  Date applied:2015.2

    Announcement no:特開2016-157856  Date announced:2016.9

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  • 遍歴電子反強磁性体およびその製造法

    松石聡, 細野秀雄, 雲見日出也

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    Applicant:国立大学法人東京工業大学

    Application no:特願2015-027978  Date applied:2015.2

    Announcement no:特開2016-150861  Date announced:2016.8

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  • イミドアニオン含有マイエナイト型化合物及びその製造法

    細野秀雄, 林文隆, 横山壽治, 北野政明

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    Applicant:国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構

    Application no:特願2016-506402  Date applied:2015.2

    Announcement no:再表2015-133240  Date announced:2017.4

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  • 担持金属触媒及び該触媒を用いるアンモニア合成法

    細野秀雄, 原亨和, 北野政明, 横山壽治, 井上泰徳, 神原慎志

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    Applicant:国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構

    Application no:特願2016-505140  Date applied:2015.2

    Announcement no:再表2015-129471  Date announced:2017.3

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  • 金属酸化物の薄膜、該薄膜を備えた有機エレクトロルミネッセンス素子、太陽電池、および有機太陽電池

    細野秀雄, 戸田喜丈, 渡邉 暁, 伊藤 和弘, 渡邉 俊成, 光井 彰, 大越 雄斗, 宮川 直通

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    Applicant:国立大学法人東京工業大学, 旭硝子株式会社, 国立研究開発法人科学技術振興機構

    Application no:特願2015-554710  Date applied:2014.12

    Announcement no:再表2015-098458  Date announced:2017.3

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  • 鉄系超伝導物質及びその製造方法

    細野秀雄, 澤 博, 片山 尚幸, 野原 実, 工藤 一貴

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    Applicant:国立大学法人東京工業大学, 国立大学法人岡山大学, 国立大学法人名古屋大学

    Application no:特願2015-539039  Date applied:2014.8

    Announcement no:再表2015-045733  Date announced:2017.3

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  • P型窒化銅半導体薄膜

    松崎功佑, 須崎(須﨑)友文, 細野秀雄

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    Applicant:国立大学法人東京工業大学

    Application no:特願2014-129607  Date applied:2014.6

    Announcement no:特開2016-008324  Date announced:2016.1

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  • 導電性マイエナイト型化合物粉末の製造方法

    細野秀雄, 原亨和, 井上泰徳, 北野政明, 林文隆, 横山壽治, 松石聡, 戸田喜丈

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    Applicant:国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構

    Application no:特願2014-532935  Date applied:2013.8

    Announcement no:再表2014-03447  Date announced:2016.8

    Patent/Registration no:特許6152381  Date issued:2017.6

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  • 水素生成触媒及び水素の製造法

    細野秀雄, 林文隆, 横山壽治, 原亨和, 北野政明, 戸田喜丈

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    Applicant:国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構

    Application no:特願2014-536695  Date applied:2013.8

    Announcement no:再表2014-045780  Date announced:2016.8

    Patent/Registration no:特許6143761  Date issued:2017.5

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  • 半導体膜、薄膜トランジスタ、およびこれらの製造方法

    細野秀雄, 安部勝美, 山田 和夫, 竹田 諭司

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    Applicant:国立大学法人東京工業大学, 旭硝子株式会社

    Application no:特願2013-169063  Date applied:2013.8

    Announcement no:特開2015-037164  Date announced:2015.2

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  • C12A7エレクトライドの薄膜の製造方法、およびC12A7エレクトライドの薄膜

    伊藤節郎, 細野秀雄, 林克郎, 戸田喜丈, 渡邉 暁, 伊藤 和弘, 渡邉 俊成, 宮川 直通

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    Applicant:国立大学法人東京工業大学, 旭硝子株式会社, 国立研究開発法人科学技術振興機構

    Application no:特願2014-521490  Date applied:2013.6

    Announcement no:再表2013-191210  Date announced:2016.5

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  • 有機エレクトロルミネッセンス素子

    伊藤節郎, 細野秀雄, 戸田喜丈, 渡邉 暁, 伊藤 和弘, 渡邉 俊成, 宮川 直通

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    Applicant:国立大学法人東京工業大学, 旭硝子株式会社, 国立研究開発法人科学技術振興機構

    Application no:特願2014-521492  Date applied:2013.6

    Announcement no:再表2013-191212  Date announced:2016.5

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  • 成膜装置

    細野秀雄, 安達 成司, 石丸 喜康, 田辺 圭一

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    Applicant:国立大学法人東京工業大学, 公益財団法人国際超電導産業技術研究センター

    Application no:特願2013-114584  Date applied:2013.5

    Announcement no:特開2014-234519  Date announced:2014.12

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  • 鉄系超電導材料、及びこれからなる鉄系超電導層、鉄系超電導テープ線材、鉄系超電導線材

    細野秀雄, 三浦 正志, 安達 成司, 田辺 圭一

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    Applicant:国立大学法人東京工業大学, 公益財団法人国際超電導産業技術研究センター(ISTEC)

    Application no:特願2013-110254  Date applied:2013.5

    Announcement no:特開2014-227329  Date announced:2014.12

    Patent/Registration no:特許5757587  Date issued:2015.6

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  • 超伝導化合物とその製造方法

    細野秀雄, 斉 彦鵬, 郭 建剛, 今村直貴, 松石聡, 溝口拓, 藤津悟

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    Applicant:国立大学法人東京工業大学

    Application no:特願2012-223283  Date applied:2012.10

    Announcement no:特開2014-073948  Date announced:2014.4

    Patent/Registration no:特許5664981  Date issued:2014.12

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  • マイエナイト複合材および電子放出用陰極

    林克郎, 細野秀雄

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    Applicant:国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構

    Application no:特願2012-199624  Date applied:2012.9

    Announcement no:特開2014-055313  Date announced:2014.3

    Patent/Registration no:特許6062192  Date issued:2016.12

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  • 窒化物エレクトライド及びその製法

    細野秀雄, イ ギムン, 金聖雄, 戸田喜丈, 松石聡

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    Applicant:国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構

    Application no:特願2012-166325  Date applied:2012.7

    Announcement no:特開2014-024712  Date announced:2014.2

    Patent/Registration no:特許5884101  Date issued:2016.2

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  • 水素化物イオンを含有するペロブスカイト型酸化物とその製造方法

    細野秀雄, 陰山 洋, 小林 洋治, 高野 幹夫, 矢島 健

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    Applicant:国立大学法人東京工業大学, 国立大学法人京都大学

    Application no:特願2013-523910  Date applied:2012.7

    Announcement no:特開(再表)2013-008705  Date announced:2015.2

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  • アモルファス酸化物半導体を活性層とした薄膜トランジスタ構造とその製造方法

    細野秀雄, 野村研二, 神谷利夫

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    Applicant:国立大学法人東京工業大学

    Application no:特願2012-149286  Date applied:2012.7

    Announcement no:特開2014-011425  Date announced:2014.1

    Patent/Registration no:特許5946130  Date issued:2016.6

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  • 非晶質酸化物、及び電界効果型トランジスタ

    細野秀雄, 神谷利夫, 野村研二, 中川 克己, 佐野 政史

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    Applicant:国立大学法人東京工業大学, キヤノン株式会社

    Application no:特願2012-148444  Date applied:2012.7

    Announcement no:特開2012-248853  Date announced:2012.12

    Patent/Registration no:特許5589030  Date issued:2014.8

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  • 非晶質酸化物を利用した半導体デバイス

    細野秀雄, 神谷利夫, 野村研二, 安部 勝美

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    Applicant:国立大学法人東京工業大学

    Application no:特願2012-135638  Date applied:2012.6

    Announcement no:特開2012-231153  Date announced:2012.11

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  • センサ及び非平面撮像装置

    細野秀雄, 神谷利夫, 野村 研二, 斉藤 恵志

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    Applicant:国立大学法人東京工業大学, キヤノン株式会社

    Application no:特願2012-065329  Date applied:2012.3

    Announcement no:特開2012-142600  Date announced:2012.7

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  • 電界効果型トランジスタの製造方法

    細野秀雄, 野村研二, 神谷利夫, 藪田 久人, 佐野 政史, 岩崎 達哉

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    Applicant:国立大学法人東京工業大学, キヤノン株式会社

    Application no:特願2012-058087  Date applied:2012.3

    Announcement no:特開2012-160740  Date announced:2012.8

    Patent/Registration no:特許5451801  Date issued:2014.1

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  • 電界効果型トランジスタの製造方法

    細野秀雄, 野村研二, 神谷利夫, 藪田 久人, 佐野 政史, 岩崎 達哉

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    Applicant:国立大学法人東京工業大学, キヤノン株式会社

    Application no:特願2012-058163  Date applied:2012.3

    Announcement no:特開2012-124532  Date announced:2012.6

    Patent/Registration no:特許5401571  Date issued:2013.11

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  • 電界効果型トランジスタの製造方法

    細野秀雄, 野村研二, 神谷利夫, 藪田 久人, 佐野 政史, 岩崎 達哉

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    Applicant:国立大学法人東京工業大学, キヤノン株式会社

    Application no:特願2012-058252  Date applied:2012.3

    Announcement no:特開2012-164986  Date announced:2012.8

    Patent/Registration no:特許5401572  Date issued:2013.11

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  • 画像表示装置

    細野秀雄, 神谷利夫, 野村研二, 雲見 日出也

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    Applicant:国立大学法人東京工業大学, キヤノン株式会社

    Application no:特願2012-053401  Date applied:2012.3

    Announcement no:特開2012-151485  Date announced:2012.8

    Patent/Registration no:特許5401570  Date issued:2013.11

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  • 鉄系超電導体のウィスカー結晶とその製造方法

    細野秀雄, 李 軍, 袁 潔, 湯 代明, 李 夢月, グオ ヤンフェン, 辻本 吉廣, 波多野 毅, 有沢 俊一, デミトリー ゴルバーグ, 王 華兵, 山浦 一成

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    Applicant:国立大学法人東京工業大学, 国立研究開発法人 物質・材料研究機構

    Application no:特願2012-027737  Date applied:2012.2

    Announcement no:特開2013-163615  Date announced:2013.8

    Patent/Registration no:特許5916009  Date issued:2016.4

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  • アンモニア合成触媒及びアンモニア合成方法

    細野秀雄, 原亨和, 北野政明, 金聖雄, 松石聡, 横山壽治, 林文隆, 戸田喜丈

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    Applicant:国立大学法人東京工業大学, 国立研究開発法人科学技術振興機構

    Application no:特願2012-547860  Date applied:2011.12

    Announcement no:特開(再表)2012-077658  Date announced:2014.5

    Patent/Registration no:特許5820817  Date issued:2015.10

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  • 表示装置とその製造方法

    細野秀雄, 野村研二, 山田 和夫, 竹田 諭司

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    Applicant:国立大学法人東京工業大学, 旭硝子株式会社

    Application no:特願2011-240461  Date applied:2011.11

    Announcement no:特開2013-097195  Date announced:2013.5

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  • 薄膜トランジスタ、及びそれを用いた最大印加電圧検出センサ及び照射光履歴センサ

    神谷利夫, 細野秀雄, 木村 睦

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    Applicant:国立大学法人東京工業大学, 学校法人龍谷大学

    Application no:特願2011-200040  Date applied:2011.9

    Announcement no:特開2013-062384  Date announced:2013.4

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  • 電気伝導性を有するC12A7系酸化物融液又はガラス材料及びそれらの製造方法

    細野秀雄, 金聖雄, 戸田喜丈

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    Applicant:国立大学法人東京工業大学

    Application no:特願2011-179866  Date applied:2011.8

    Announcement no:特開2013-040088  Date announced:2013.2

    Patent/Registration no:特許5681062  Date issued:2015.1

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  • 電子放出源

    須崎(須﨑)友文, 細野秀雄

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    Applicant:国立大学法人東京工業大学

    Application no:特願2011-172319  Date applied:2011.8

    Announcement no:特開2013-03785  Date announced:2013.2

    Patent/Registration no:特許5742055  Date issued:2015.5

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  • 非晶質酸化物、及び電界効果型トランジスタ

    細野秀雄, 神谷利夫, 野村研二, 佐野 政史, 中川 克己

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    Applicant:国立大学法人東京工業大学, キヤノン株式会社

    Application no:特願2011-156723  Date applied:2011.7

    Announcement no:特開2011-249823  Date announced:2011.12

    Patent/Registration no:特許5337849  Date issued:2013.8

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  • 同時両極性電界効果型トランジスタ及びその製造方法

    細野秀雄, 野村研二, 神谷利夫

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    Applicant:国立大学法人東京工業大学

    Application no:特願2011-044517  Date applied:2011.3

    Announcement no:特開2012-182329  Date announced:2012.9

    Patent/Registration no:特許5735306  Date issued:2015.4

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  • 二酸化炭素の吸着還元剤及び還元方法

    細野秀雄, 平山博之, 戸田喜丈

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    Applicant:国立大学法人東京工業大学

    Application no:特願2010-167366  Date applied:2010.7

    Announcement no:特開2012-025636  Date announced:2012.2

    Patent/Registration no:特許5530288  Date issued:2014.4

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  • 12CaO・7AI2O3化合物

    細野秀雄, 平野正浩, 林克郎, 最上 理映, 阪口 博之

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    Applicant:国立大学法人東京工業大学, 株式会社ファンケル

    Application no:特願2011-518473  Date applied:2010.6

    Announcement no:特開(再表)2010-143574  Date announced:2012.11

    Patent/Registration no:特許5723771  Date issued:2015.4

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  • 複合水素透過膜

    細野秀雄, 俵山 博匡, 山浦 真一, 張 偉, 井上 明久

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    Applicant:国立大学法人東京工業大学, 国立大学法人東北大学

    Application no:特願2009-135581  Date applied:2009.6

    Announcement no:特開2010-279905  Date announced:2010.12

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  • 有機化合物の電解還元合成方法

    細野秀雄, 平野正浩, 澤口 正紀, 安田 新, 伊藤 節郞, 渡邉 暁

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    Applicant:国立大学法人東京工業大学, 旭硝子株式会社

    Application no:特願2009-114402  Date applied:2009.5

    Announcement no:特開2010-261086  Date announced:2010.11

    Patent/Registration no:特許5374770  Date issued:2013.10

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  • 抗酸化剤及び抗酸化化粧料

    細野秀雄, 平野正浩, 林克郎, 阪口 博之, 最上 理英, 金 辰也

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    Applicant:国立大学法人東京工業大学, 株式会社ファンケル

    Application no:特願2008-287781  Date applied:2008.11

    Announcement no:特開2009-161728  Date announced:2009.7

    Patent/Registration no:特許5615491  Date issued:2014.9

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  • 酸素原子発生装置

    林 克郎, 細野秀雄, 平野 正浩

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    Applicant:国立大学法人東京工業大学

    Application no:特願2008-219450  Date applied:2008.8

    Announcement no:特開2010-052980  Date announced:2010.3

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  • 複合酸化物膜および電気伝導性複合化合物膜の製造方法

    細野秀雄, 平野正浩, 宮川 仁, 松山 博圭, 三田村 哲理

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    Applicant:国立大学法人東京工業大学, 旭化成株式会社

    Application no:特願2007-279093  Date applied:2007.10

    Announcement no:特開2009-107858  Date announced:2009.5

    Patent/Registration no:特許5224778  Date issued:2013.3

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  • 抗酸化剤

    細野秀雄, 林克郎, 平野正浩, 阪口 博之, 最上 理映, 金 辰也

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    Applicant:国立大学法人東京工業大学, 株式会社ファンケル

    Application no:特願2008-553958  Date applied:2007.10

    Announcement no:特開(再表)2008-087774  Date announced:2010.5

    Patent/Registration no:特許5213122  Date issued:2013.3

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  • 電気伝導性複合化合物の製造方法

    細野秀雄, 平野 正浩, 金 聖雄, 三田村 哲理, 松山 博圭

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    Applicant:国立大学法人東京工業大学, 旭化成株式会社

    Application no:特願2007-115159  Date applied:2007.4

    Announcement no:特開2008-266105  Date announced:2008.11

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  • 活性酸素を含有したオキシアパタイト、その製造方法、及びそれからなる光触媒

    細野秀雄, 林克郎, 酒井 崇, 松石 聡, 平野 正浩, 三田村 哲理, 松山 博圭

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    Applicant:国立大学法人東京工業大学, 旭化成株式会社

    Application no:特願2006-240041  Date applied:2006.9

    Announcement no:特開2007-090341  Date announced:2007.4

    Patent/Registration no:特許4766685  Date issued:2011.6

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  • 複合金属酸化物及び導電性複合金属酸化物の製造方法

    細野秀雄, 金 聖雄, 林克郎, 村松 利光

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    Applicant:国立大学法人東京工業大学, 関西ペイント株式会社

    Application no:特願2006-185804  Date applied:2006.7

    Announcement no:特開2008-013396  Date announced:2008.1

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  • 導電性マイエナイト型化合物の製造方法

    細野秀雄, 林 克郎, 金 聖雄, 平野 正浩, 鳴島 暁, 伊藤 節郎

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    Applicant:国立大学法人東京工業大学, 旭硝子株式会社

    Application no:特願2007-519014  Date applied:2006.5

    Patent/Registration no:特許4497484  Date issued:2010.4

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  • 導電性マイエナイト型化合物の製造方法

    細野秀雄, 林 克郎, 金 聖雄, 平野 正浩, 鳴島 暁, 伊藤 節郎

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    Applicant:国立大学法人東京工業大学, 旭硝子株式会社

    Application no:特願2007-519015  Date applied:2006.5

    Patent/Registration no:特許4495757  Date issued:2010.4

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  • 酸化触媒及びイオン伝導体並びにその製造方法

    細野秀雄, 平野 正浩, 林 克郎, 蔵重 和央

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    Applicant:国立大学法人東京工業大学, 日立化成工業株式会社

    Application no:特願2005-329076  Date applied:2005.11

    Announcement no:特開2007-137684  Date announced:2007.6

    Patent/Registration no:特許4806251  Date issued:2011.8

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  • 電界効果型トランジスタ

    細野秀雄, 神谷利夫, 野村 研二, 佐野 政史, 中川 克己

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    Applicant:国立大学法人東京工業大学, キヤノン株式会社

    Application no:特願2005-325366  Date applied:2005.11

    Announcement no:特開2006-165529  Date announced:2006.6

    Publication no:特許5138163  Date published:2012.11

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  • 非晶質酸化物を利用した半導体デバイス

    細野秀雄, 神谷利夫, 野村 研二, 安部 勝美

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    Applicant:国立大学法人東京工業大学, キヤノン株式会社

    Application no:特願2005-325370  Date applied:2005.11

    Announcement no:特開2006-165532  Date announced:2006.6

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  • 非晶質酸化物を利用した半導体デバイス

    細野秀雄, 神谷利夫, 野村研二, 安部 勝美

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    Applicant:国立大学法人東京工業大学, キヤノン株式会社

    Application no:特願2005-325370  Date applied:2005.11

    Announcement no:特開2006-165532  Date announced:2006.6

    Patent/Registration no:特許5053537  Date issued:2012.8

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  • 電界効果型トランジスタ

    細野秀雄, 神谷利夫, 野村研二, 長田 芳幸

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    Applicant:国立大学法人東京工業大学, キヤノン株式会社

    Application no:特願2005-325364  Date applied:2005.11

    Announcement no:特開2006-165527  Date announced:2006.6

    Publication no:特許5118810  Date published:2012.10

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  • 電界効果型トランジスタ

    細野秀雄, 野村研二, 神谷利夫, 佐藤 政史, 中川 克己

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    Applicant:国立大学法人東京工業大学, キヤノン株式会社

    Application no:特願2005-325371  Date applied:2005.11

    Announcement no:特開2006-173580  Date announced:2006.6

    Patent/Registration no:特許5118812  Date issued:2012.10

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  • 発光装置及び表示装置

    細野秀雄, 神谷利夫, 野村研二, 田 透, 岩崎 達哉

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    Applicant:国立大学法人東京工業大学, キヤノン株式会社

    Application no:特願2005-325367  Date applied:2005.11

    Announcement no:特開2006-186319  Date announced:2006.7

    Patent/Registration no:特許5118811  Date issued:2012.10

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  • 電界効果型トランジスタの製造方法

    細野秀雄, 野村研二, 神谷 利夫, 藪田 久人, 佐野 政史, 岩崎 達哉

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    Applicant:国立大学法人東京工業大学, キヤノン株式会社

    Application no:特願2005-325369  Date applied:2005.11

    Announcement no:特開2006-165531  Date announced:2006.6

    Patent/Registration no:特許5126730  Date issued:2012.11

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  • 画像表示装置

    細野秀雄, 神谷利夫, 野村 研二, 雲見 日出也

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    Applicant:国立大学法人東京工業大学, キヤノン株式会社

    Application no:特願2005-325365  Date applied:2005.11

    Announcement no:特開2006-165528  Date announced:2006.6

    Patent/Registration no:特許5126729  Date issued:2012.11

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  • AlGaN系深紫外発光素子およびその製造方法

    川崎 宏治, 青柳克信, 細野秀雄

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    Applicant:国立大学法人東京工業大学

    Application no:特願2005-093028  Date applied:2005.3

    Announcement no:特開2006-278554  Date announced:2006.10

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  • 耐紫外線ガラス

    細野秀雄, 沢登成人, 馬場信義, 土谷宏一

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    Applicant:財団法人理工学振興会, 株式会社住田光学ガラス

    Application no:特願2000-302361  Date applied:2000.10

    Announcement no:特開2002-114536  Date announced:2002.4

    Patent/Registration no:特許4799726  Date issued:2011.8

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Awards

  • Von Hippel Prize

    2018.12   Materials Research Society (MRS)  

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  • Foreign Member, The Royal Society

    2017   The Royal Society  

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    Country:United Kingdom

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  • Japan Prize

    2016   Japan Prize Foundation  

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    Award type:International academic award (Japan or overseas)  Country:Japan

    ナノ構造を活用した画期的な無機電子機能物質・材料の創製

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  • Ceramics Grand Prize

    2016   The Ceramic Society of Japan   無機電子機能材料の創出と応用に関する研究

    Hideo Hosono, Toshio Kamiya, Hiroshi Kawazoe

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

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  • Fellow, SID

    2016   SID (The Society for InformationDisplay)  

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  • James C. McGroddy Prize for New Materials

    2015   American Physical Society  

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    Award type:Award from international society, conference, symposium, etc.  Country:United States

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  • 名誉会員

    2015   The Chemical Society of Japan  

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

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  • JST Intellectual Property Special Contribution Award

    2015   Japan Science and Technology Agency  

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    Country:Japan

    高精細ディスプレイに適した酸化物半導体

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  • Inoue Harushige Prize

    2015   Japan Science and Technology Agency  

    Hideo Hosono, Shigeru Oi

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    Country:Japan

    酸化物半導体In-Ga-Zn-Oスパッタリングターゲットの開発

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  • Imperial Prize and Japan Academy Prize

    2015   The Japan Academy  

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

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  • Honda Memorial Prize

    2013.5   The Honda Memorial Foundation  

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    Award type:Award from publisher, newspaper, foundation, etc.  Country:Japan

    透明酸化物の新機能開拓と応用展開に関する先駆的研究

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  • 日本イノベーター大賞優秀賞

    2013   Nikkei Business Publications, Inc.  

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    Award type:Award from publisher, newspaper, foundation, etc.  Country:Japan

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  • Thomson Reuters Citation Laureates

    2013   Thomson Reuters  

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    Country:United States

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  • Daiwa Adrian Prize

    2013   The Daiwa Anglo-Japanese Foundation  

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

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  • Engineering Education Awards

    2013   Japanese Society for Engineering Education  

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

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  • Mott Lecture Award

    2013   アモルファス半導体国際会議  

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    Award type:Award from international society, conference, symposium, etc. 

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  • NIMS Award

    2013   National Institute of Materials Science  

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

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  • Nishina Memorial Prize

    2012   Nishina Memorial Foundation  

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    Award type:Award from publisher, newspaper, foundation, etc.  Country:Japan

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  • CSJ Awards

    2012   The Chemical Society of Japan  

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

    Discovery of Iron-based Superconductors and Invention of High Performance Oxide Thin Film Transistors

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  • JSAP Outstanding Achievement Award

    2011.3   The Japan Society of Applied Physics  

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

    新機能酸化物の創製に関する先駆的研究

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  • Jan Rajchman Prize

    2011   SID (The Society for InformationDisplay)  

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    Award type:Award from international society, conference, symposium, etc. 

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  • The Asahi Prize

    2010   朝日新聞文化財団  

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    Award type:Award from publisher, newspaper, foundation, etc.  Country:Japan

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  • Special Recognition Awards

    2009   SID (The Society for InformationDisplay)  

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    Award type:Award from international society, conference, symposium, etc. 

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  • Medal with Purple Ribbon

    2009   Cabinet Office  

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    Country:Japan

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  • Bernd T.Matthias Prize for Superconductivity

    2009   Texas Center for Superconductivity  

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    Award type:International academic award (Japan or overseas)  Country:United States

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  • 50th Fujihara Award

    2009   The Fujihara Foundation of Science  

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    Award type:Award from publisher, newspaper, foundation, etc.  Country:Japan

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  • Fellow, The Japan Society of Applied Physics

    2008   The Japan Society of Applied Physics  

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    Country:Japan

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  • JSAP Outstanding Paper Award

    2008   The Japan Society of Applied Physics  

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

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  • Distinguished Award on Superconductivity Science and Technology

    2008   Forum of Superconductivity Science and Technology  

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    Award type:Award from publisher, newspaper, foundation, etc.  Country:Japan

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  • NISTEP Award (The Researchers with Nice Step)

    2008   Ministry of Education, Culture, Sports, Science and Technology  

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    Country:Japan

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  • 加藤記念賞

    2008   Kato Foundation for Promotion of Science  

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    Award type:Award from publisher, newspaper, foundation, etc.  Country:Japan

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  • 第76回服部報公賞

    2006.10   The Hattori Hokokai Foundation  

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    Award type:Award from publisher, newspaper, foundation, etc.  Country:Japan

    透明酸化物電子活性材料に関する研究

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  • 3rd Honda Frontier Award

    2006   The Honda Memorial Foundation  

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    Award type:Award from publisher, newspaper, foundation, etc.  Country:Japan

    ナノ構造を制御・活用した電子活性透明酸化物材料の機能開拓

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  • Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology

    2005   Ministry of Education, Culture, Sports, Science and Technology  

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    Country:Japan

    JST ERATO「細野透明電子活性プロジェクト」

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  • JCerS優秀論文賞

    2005   Ceramic Society of Japan  

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    Award type:Honored in official journal of a scientific society, scientific journal  Country:Japan

    SiO_2_ガラスにおける酸素分子の表面溶解と拡散

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  • 第14回TEPIAハイテクビデオコンクールグランプリ

    2004   Association for Technological Excellence Promoting Innovative Advances  

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    Award type:Award from publisher, newspaper, foundation, etc.  Country:Japan

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  • World Academy of Ceramics 学術会員

    2004   World Academy of Ceramics  

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    Award type:Award from international society, conference, symposium, etc. 

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  • 日本化学会学術賞

    2003   The Chemical Society of Japan  

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

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  • Fellow, The American Ceramic Society

    2002   The American Ceramic Society  

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    Award type:Award from international society, conference, symposium, etc.  Country:United States

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  • Inoue Prize for Science

    2000   Inoue Foundation for Science  

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    Award type:Award from publisher, newspaper, foundation, etc.  Country:Japan

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  • The Scientific Awards

    1999   Ceramic Society of Japan  

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

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  • JCerS最優秀論文賞

    1999   Ceramic Society of Japan  

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    Award type:Honored in official journal of a scientific society, scientific journal  Country:Japan

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  • The Ichimura Scientific Award

    1997   The New Technology Development Foundation  

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    Award type:Award from publisher, newspaper, foundation, etc.  Country:Japan

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  • W.H.Zachariasen Award

    1995   Journal of Non-Crystalline Solids  

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    Award type:Honored in official journal of a scientific society, scientific journal 

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  • 1st Otto-Schott Research Award

    1991   SCHOTT AG  

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    Award type:Award from publisher, newspaper, foundation, etc.  Country:Germany

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  • The Scientific Awards

    1986   Ceramic Society of Japan  

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    Award type:Award from Japanese society, conference, symposium, etc.  Country:Japan

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Research Projects

  • グリーンアンモニアおよび尿素とその誘導体合成のための特異電子系触媒の開発

    2021 - 2025

    科学技術振興機構  戦略的な研究開発の推進 未来社会創造事業 探索加速型 

    細野 秀雄

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    再生可能エネルギー由来の水素からアンモニアを合成するグリーンアンモニアプロセス構築には、低温・低圧で作動する新触媒の開発が必須である。本研究では、新電子化物触媒によりこれを実現し、化石資源に頼らないアンモニア合成プロセスを新たに構築し、CO2排出削減に寄与する技術システムを社会に導入する。また、得られたアンモニアをオンサイトで窒素肥料(尿素や有機尿素誘導体)の合成する技術構築にも展開する。

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    J-GLOBAL

  • パラジウム-希土類金属間化合物ナノ粒子による炭素―炭素クロスカップリング反応

    Grant number:18F18361  2018.10 - 2021.3

    日本学術振興会  科学研究費助成事業  特別研究員奨励費

    細野 秀雄, YE TIANNAN

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    Grant amount:\2200000 ( Direct Cost: \2200000 )

    Based on the topic of our JSPS project, we developed a series of Pd-bearing intermetallic catalysts, including Y3Pd2 electride, and Y3Pd, Y3Pd4, YPd3 compounds, in which Pd actives sites were implanted into the intermetallic crystal lattice with low work function and high carrier density features. All of them showed extremely chemical stability and served as efficient catalysts for Suzuki coupling reactions. Besides the Pd intermetallic catalysts, we also proposed a new strategy for trapping Pt single atoms through the coulomb interaction between Pt anions and positively charged surface cavities of C12A7. The stabilized Pt single atoms exhibited exceptionally high thermal stability and superior catalytic activity for the hydrogenation of nitroarenes. After these two works, we moved our focus on metal nitride catalysts for ammonia synthesis. We made an intriguing discovery that the combination of nickel and lanthanum nitride enables stable and highly efficient ammonia synthesis. After that, we continuously established a general rule for the design of nitride-based catalysts towards ammonia synthesis, and demonstrate that nitrogen vacancy formation energy as the key factor that affect the reaction barrier of the rate determining step of the ammonia synthesis process.

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  • New evolution of materials concept and application of electrides

    Grant number:17H06153  2017.5 - 2022.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (S)

    Hosono Hideo

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    Grant amount:\174980000 ( Direct Cost: \134600000 、 Indirect Cost:\40380000 )

    We have extended the material concept of electrides (electrides), explored new properties, and applied them to new applications. The concept of electrides, which had been limited to materials based on bulk electron-deficient ionic crystals, was successfully extended to surfaces, neutral and electron-rich types, and intermetallic compounds. In terms of new properties, we discovered that 1D electrides are Mott-type insulators, 2D electrides can be a platform for topological materials, ferromagnetism mediated by anion electrons in rare-earth carbide electrides, and electrides that are stable even in water. In the application, we found that amorphous electride thin films are excellent as electron injection layer materials for OLEDs due to their low work function and high transparency, and that cobalt-based intermetallic compound electrides and surface electrides, nickel-supported cerium nitrides, show high activity as ammonia synthesis catalysts without ruthenium.

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  • Area Cultivation of Amorphous Electrides

    Grant number:17H01228  2017.4 - 2018.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

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    Grant amount:\43160000 ( Direct Cost: \33200000 、 Indirect Cost:\9960000 )

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  • 新物質科学と元素戦略

    2013.10 - 2017.3

    科学技術振興機構  さきがけ 

    細野 秀雄

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    Authorship:Principal investigator  Grant type:Competitive

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  • エレクトライドの物質科学と応用展開

    2013.10

    科学技術振興機構  ACCEL 

    細野 秀雄

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    Authorship:Principal investigator  Grant type:Competitive

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  • 電子材料領域 東工大元素戦略拠点

    2012.6

    文部科学省  元素戦略プロジェクト(拠点形成型) 

    細野 秀雄

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    Authorship:Principal investigator  Grant type:Competitive

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  • High-pressure studies on crystal strucure for iron-based superconductors at low temperature

    Grant number:24340088  2012.4 - 2015.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

    TAKAHASHI Hiroki, TOMITA Takahiro, NAKANO Satoshi, HOSONO Hideo

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    Grant amount:\20150000 ( Direct Cost: \15500000 、 Indirect Cost:\4650000 )

    We performed high-pressure studies on crystal structure for iron-based superconductors. We installed a new refrigerator at beam line BL-18C in KEK-PF, which can realize precise x-ray diffraction measurements under high pressure and at low temperature, since we could sufficiently suppress the vibration generated by refrigerator. We measured pressure dependence of Tc for 1111-type iron-based superconductors prepared by Prof. Hideo Hosono’s group. Large pressure dependences of Tc were found for these materials. We discussed these results from the structural view point.

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  • NMR study under high pressure: investigation of superconductivity induced by orbital fluctuations and superconductivity accompanied by antiferromagnetic ordering

    Grant number:23340101  2011.4 - 2014.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

    FUJIWARA Naoki, UWATOKO Yoshiya, HOSONO Hideo, TAKAHASHI Hiroki

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    Grant amount:\18330000 ( Direct Cost: \14100000 、 Indirect Cost:\4230000 )

    To investigate the possibility of superconductivity induced by orbital fluctuations, we performed nuclear-magnetic-resonance measurements on LaFeAsO1-xHx in a heavily electron-doped regime where spin fluctuations are supposed to be fairly small. We unexpectedly discovered antiferromagnetic ordering in this regime and obtained a brand-new electronic phase diagram, contrary to the commonly-believed expectation in the field of strongly electron systems.

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  • 新超電導および関連機能物質の探索と産業用超電導線材の応用

    2010.3 - 2014.3

    内閣府  最先端研究開発支援プログラム 

    細野 秀雄

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    Authorship:Principal investigator  Grant type:Competitive

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  • 無機エレクトライドの領域開拓:物質探索、機能設計、応用展開

    2009.4 - 2011.3

    科学研究費補助金(基盤研究(S)) 

    細野 秀雄

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    Authorship:Principal investigator  Grant type:Competitive

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  • 配列ナノ空間を利用した新物質科学

    Grant number:17631005  2005

    日本学術振興会  科学研究費助成事業  基盤研究(C)

    谷垣 勝己, 野末 泰夫, 山中 昭司, 榎 敏明, 細野 秀雄, 木村 薫

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    Grant amount:\3500000 ( Direct Cost: \3500000 )

    本企画調査研究では、配列したナノ空間を利用した新物質の開拓・関連した基礎科学・応用という観点から、現在報告されている研究開発の現状と動向を企画調査した。配列したナノ空間を新物質開拓の観点から考えた場合、主としてAl,B,C,Si,Ge元素を中心とする多面体構造の物質空間および周期的配列空間を有した無機系ナノ多孔質物質が考えられる。実際の調査研究では、(1)物質系分野を詳細に分類して、(I-1)Si,Ge系ナノ多面体物質(I-2)ゼオライト系無機多孔質物質(I-3)Al,B系多面体系物質(I-4)炭素系内部空間物質(I-5)ナノポーラス物質(1-6)新しい配列ナノ空間物質の6分野に分類して調査研究を行った。また、ナノ空間物質では、その微細な空間および構造をどのように精密に決定するという重要な課題がある。本課題に対しては、(II)ナノ構造に関する研究状況の調査のために、(II-1)電子線観測を利用したナノ構造(II-2)高輝度放射光施設などを利用したナノ構造解析の観点から、構造に関する研究の進展を調査した。文献調査などの資料収集および情報収集などを行った結果をもとにして、企画調査報告書を作成した。また、本調査研究のメンバーならびに招待講演者により組織した研究会を開催して、将来の展望に関して議論した。また、企画調査研究の期間に、応用物理学会におけるシンポジウムを企画して、ナノ配列空間を利用した新物質科学---ユビキタス元素戦略と称する講演会を開催して、今後の研究動向を議論した。

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  • 透明酸化物のナノ構造を活用した機能開拓と応用展開

    2004.10 - 2010.3

    JST-ERATO/SORST 

    細野 秀雄

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    Authorship:Principal investigator  Grant type:Competitive

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  • ナノ構造と活性アニオンを利用した透明酸化物の機能開拓

    2004.4 - 2009.3

    科学研究費補助金(学術創成研究費) 

    細野 秀雄

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    Authorship:Principal investigator  Grant type:Competitive

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  • 室温で安定な無機エレクトライドからの冷電子放出の検討

    Grant number:16655085  2004

    日本学術振興会  科学研究費助成事業  萌芽研究

    細野 秀雄

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    Grant amount:\3000000 ( Direct Cost: \3000000 )

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  • モディファイドシリカガラスを用いた紫外ファイバーレーザーへの挑戦

    Grant number:15350119  2003 - 2004

    日本学術振興会  科学研究費助成事業  基盤研究(B)

    細野 秀雄, 大登 正敬, 神谷 利夫

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    Grant amount:\14700000 ( Direct Cost: \14700000 )

    本年度は、Ce^<3+>を活性イオンとし、モディファイドシリカガラスにドーピングをおこなったバルクガラスとそれを紡糸したファイバーを作製し、以下の結果を得た。
    1.Modified SiO^2ガラスとして、P, B,およびB+Pの共ドープをした試料を作製した。その結果、Ce^<3+>の発光波長のピークはnon-doped(420nm)〜B(415nm)>P(360nm)>B+P(330nm)と大きく変化し、ドーピングの効果が顕著に現れることがわかった。同時にその励起スペクトルのピーク位置も敏感にシフトし、non-doped(340nm)〜340nm(B)>P(300nm)>B+P(280nm)となった。すなわち、ドーパントとしてPはBと比べると極めて有効に働くことがわかった。発光波長が可視から紫外にシフトし、ストークスシフトの大きさが著しく減少する。蛍光寿命は60nsから30ns程度に減少した。
    2.パルスESR法で上記の試料について、4KでのElectron Spin Echo Envelope Modulationを測定した。いずれの試料においても3パルス法で明瞭なESEEMシグナルが観測され、それをフーリエ変換することによりCe^<3+>の近傍に位置する磁気イオンを同定した。その結果、^<31>P、^<10,11>Bに相当する周波数にピークが得られた。現在そのパターンのsimulationを行うことによって、配位構造の決定を行っている。
    3.バルクとファイバとの発光特性を比較をおこなったが、顕著な違いは見られなかった。

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  • 産業化を目指したナノ材料開拓と人材育成

    2002.4 - 2007.3

    21世紀CIOプログラム 

    細野 秀雄

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    Authorship:Principal investigator  Grant type:Competitive

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  • DEVELOPMENT OF OPTICAL FIBERS FOR DEEP UV LIGHT

    Grant number:13555240  2001 - 2002

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

    HOSONO Hideo, OTO Masataka, UEDA Kazushige

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    Grant amount:\13200000 ( Direct Cost: \13200000 )

    The purpose of this research to develop optical fibers for deep ultraviolet radiation using modified SiO2 class developed for vacuum UV lithography by the present author in 1999. The results obtained are summarized as follows.
    (1) The fibers composed of 200ppm F-doped SiO2 core and 5000ppm F-doped SiO2 clad exhibited a high transmission (〜60%/m)by tuning the drawing conditions. The refractive index was 0.7%.
    (2) The resulting fibers treated in pressured H2 gas for 2 days exhibited excellent toughness for F2 laser irradiation, i.e., almost no degradation was seen after 105 pulses of ArF laser pulse(〜50 mJ/cm2) was noted, while the as-drawn fibers were significantly degraded.
    (3) Excellent leaching ability was found for the fabricated fibers. Sharpening of an edge was automatically achieved just by placing the edge in HF-acid solution. Application to probe for UV-SNOM is expected.
    (4) Fundamental information on interaction of SiO2 glass with F2 excimer laser was obtained, i.e., defect formation, photo-induced structural change, and effects of H2-laeading.

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  • Transparent long lasting and photo-stimulating materiaals

    Grant number:11555234  1999 - 2000

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B).

    HOSONO Hideo, YAMAZAKI Masaaki, YANO Tetsuji, UEDA Kazushige

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    Grant amount:\13800000 ( Direct Cost: \13800000 )

    Long lasting luminescence(LLL)and photostimulated luminescence(PSL)were found in reduced calcium aluminate glasses activated with Tb3+ ions. The LLL from Tb3+ was observed by illuminating the Tb3+4f-5d charge transfer band with uv light, while the PSL was seen by stimulating the glasses after uv-illumination with 633nm light. The decay curve of the LLL was fitted with a second order kinetics for the initial period and a first order for the latter. An electron spin resonance signal which is attributed to an F+-like center associated with Ca^<2+> ions was induced by illumination with uv-light and its intensity decay was fitted with the latter component of the LLL.
    The appearance of the PSL by illumination with 633nm light distinct reduced the ESR signal intensity. The thermoluminescent spectra of the specimen illuminated at 77K were composed of two components peaking at 〜240K and 〜380K.The low temperature peak and the high temperature peak were attributed to an F-center(two electrons trapped at the site of an oxygen vacancy)and an F+-center(an electron trapped at the site of an oxygen vacancy), respectively. It was concluded from the above results that electrons of the F-center and the F+-center contribute predominantly to the emergence of the LLL and the PSL, respectively.

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  • Electronic Transport Properties of Transpatent Conducting Amorphous materials

    Grant number:10450241  1998 - 1999

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

    HOSONO Hideo, KAWAZOE Hiroshi, SHIMAKAWA Kouichi, UEDA Kazushige, TANAKA Keiji

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    Grant amount:\13400000 ( Direct Cost: \13400000 )

    The primary purpose of this study is to examine electronic transport properties of transparent conducting amorphous semiconducting materials, which we found the following our working hypothesis to explore candidate materials. The results obtained are summarized as below :
    (1) Free carrier absorption in degenerate transparent conducting amorphous oxides, 2CdOGeOィイD22ィエD2 and CdO-PbOィイD22ィエD2, was successfully analyzed using Drude formation and the absorption could be described by a single relaxation time. The fundamental parameters associated with electronic transport such as mean free path, effective mass and a microscopic mobility were extracted.
    (2) X-ray structural analysis of amorphous 2CdO-GeOィイD22ィエD2 thin films revealed that local structure around CdィイD12+ィエD1 or GeィイD14+ィエD1 ion were similar to that in the crystalline CdィイD22ィエD2GeO4 (with olive type structure) which is a n-type semiconductor.
    (3) Amorphous WOィイD23ィエD2 was converted into degenerate semi-conducting state by ion implantation of HィイD1+ィエD1, HeィイD1+ィエD1+ or WィイD1+ィエD1.
    (4) An N-type highly conducting amorphous chacogenide semiconductor was found by extending our working hypothesis to explore transparent conducting amorphous oxides. Thin films of Cd-In-S showed a conductivity of 10ィイD1-1ィエD1 ScmィイD1-1ィエD1 and negative Seebeck and Hall coefficients, This is the first demonstration of highly N-type conducting amorphous semiconductor.

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  • Studies on the mechanism of photoinduced glass manipulation

    Grant number:10450001  1998 - 1999

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

    TANAKA Keiji, HOSONO Hideo, GOTOU Tamihiro, YAMAGUCHI Masashi

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    Grant amount:\2500000 ( Direct Cost: \2500000 )

    The present study has obtained three kinds of results. The first concerns about the fundamentals of chalcogenide glasses, which show photoinduced phenomena, the second about the photoinduced glass manipulation in covalent compositions such as AsィイD22ィエD2SィイD23ィエD2, and the third about the photoinduced deformation in Ag-containing chalcogenide glasses.
    With regard to the fundamentals, microscopic structures and electronic states have been studied through x-ray diffraction, Raman scattering, and photoconduction measurements. Some new insights are obtained for the first-sharp diffraction peak and the Boson peak. The photoconduction study has revealed the dynamics of photoexcited holes in band-tail states.
    For the glass manipulation in covalent glasses, we have obtained some idea upon the electronic process, while the final conclusion is still open. For instance, it has been demonstrated that many electrons and holes, the number being comparable to the tail density, are required for the glass manipulation process. However, how these carriers can give rise to the fluidity of glass networks is still speculative.
    The photoinduced deformation phenomenon in Ag-containing chalcogenide glasses has been discovered in the present study. We are now able to control the migration of AgィイD1+ィエD1 ions through electronic carriers which are excited by bandgap illumination. Further studies are in progress.

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  • Development of Highly Photosensitive Silica-based Glasses by Doping and Application to Devices

    Grant number:09555197  1997 - 1998

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

    HOSONO Hideo, UEDA Kazushige, SANADA Kazuo, NISHII Junji

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    Grant amount:\12300000 ( Direct Cost: \12300000 )

    The purpose of this study was to create highly photosensitive silica-based glasses by doping and to evaluate the devise function.
    The results obtained are summarized as follows :
    (1) Enormously large refractive index change(2-4 %) upon irradiation with ArF excimer laser was found in sputter-deposited xGeO_2-(1-x)SiO_2 glass thinfilms ( x> 0.2). The sign of index change was negative and the primary origin was due to laser-induced volume expansion. This is the first discovery of such a huge index change as far as we surveyed.
    (2) It was found that implanat ion of proton into Ge-doped SiO_2 glasses prepared by VAD method induced the room temperaturte formation of nanocrystal line Ge particles. The depth of the formation was close to that of peak in the electronic energy deposition. NO such a formation was seen for He-ion-implanat ion. A combined effect of electronic energy deposition and chemical interaction of implanted protons with GeO2 phases in the glasses plays an essential role. This is a novel way to form nanoparticles embedded in glasses.
    (3) A long lasting phosphorescence glass was found in Tb^<3+>-doped ZnO-B_2O_3-SiO_2 glasses. It was suggested that The photoionozat ion of Tb^<3+> ion and the formation of F^+-type center associated with Zn^<2+> ions occur during illumination and the recombination of electron released thermally from the F+-center with photoionized Tb^<3+>gives rise to long lasting luminescence.

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  • 高プロトン伝導性アモルファス材料の合成と電導率

    Grant number:08229229  1996

    日本学術振興会  科学研究費助成事業  重点領域研究

    阿部 良弘, 春日 敏宏, 細野 秀雄, 野上 正行

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    Grant amount:\2100000 ( Direct Cost: \2100000 )

    プロトンを荷電担体として、かつ、その移動度の大きいガラス膜が開発されれば、水素ガスセンサーや酸水素燃料電池など、クリーンエネルギー分野での幅広い応用が期待でき、その開発のニーズは極めて高い。ガラス中のプロトン濃度を高めることで電気伝導度を高くすることができると予測できたので、本研究では、ゾル-ゲル法やプロトン注入法を用いて、プロトン濃度が高く、かつ、強度や化学安定性に優れた高プロトン伝導性ガラスを開発すべく、P_2O_5-ZrO_2にSiO_2を導入した三成分系についてガラス組成の決定と作成方法の検討を行った。
    P_2O_5、Zr(OC_3H_7)_4及びSi(OC_2H_5)_4を原料にして作成したゲルの中で、5ZrO_2・5P_2O_5・90SiO_2や100SiO_2組成のものは800℃以上の温度で加熱しても、亀裂が入らず、かつ化学安定性に優れたガラスになった。乾燥しただけのゲルの30℃での電導度は〜5x10^<-7>S/cmであった。一方、高温で加熱したものでは、100SiO_2組成では、温度の上昇とともに電導度は低くなったのに対し、5ZrO_2・5P_2O_5・90SiO_2組成のものは、200℃で電導度は10^<-3>S/cm程度にまで上昇し、加熱していないものにくらべて、著しく高くなっていた。このように高い電導度は、800℃までの温度で加熱したものでも保たれていた。
    作成したガラスのプロトン伝導はXOH(XはPやSiなど)結合からのプロトンの解離とガラス内での移動によって決められ、水素結合性の大きいPOHの導入と、ガラス中に存在する数nm程度の気孔に吸着した水によってプロトンの移動が容易になり、高い電導度が得られたと結論できた。

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  • Preparation and evaluation of novel transmitting conducting oxide thin films for electron beam lithography

    Grant number:07555668  1995 - 1996

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

    HOSONO Hideo, YAMAGATA Shigeru, HISHITA Shun-ichi, UEDA Naoyuki

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    Grant amount:\2000000 ( Direct Cost: \2000000 )

    The purpose of the present project was to prepare novel transpatrent conducting oxide thin films for electron beam lithography and to evaluate their optical transport properties.
    The primary results obtained are summarized as follows :
    (1) Highly electriconducting beta-Ga_2O_3 single crystal with the band gap of 4.8eV was sucessfully prepared by floating zone technique under a controlled atmosphere. Anisotropy of conductivity and optical band gap was reasonablly explained by atomic arrangement. The maximum conductivity at 300 K was 40 Scm^<-1> along b-axis.
    (2) Rf-sputtered thin films of MgIn_2O_4 with spinel type structure could be converted from insulating into highly conducting by doping of carrier electrons utilizing ion implantation of Li+or H^+. Efficiency of carrier generation was -20% in as-implanted state but could be increased to -80% by appropriate post annealing heat treatment of the implanted specimens.
    (3) Transparent conducting amorphous oxides were found. DC conductivity of amorphous thin films of CdO-GeO<@D22@>D2 was drastically increased from 10<@D1-9@>D1 to 10<@D12@>D1 Scm<@D1-1@>D1 without accompanying a significant decrease in visible transmission at 300 K by implanting H<@D1(]SY.+-。[)@>D1 or Li+ to a fluence of 2 x10<@D116@>D1 cm<@D1-2@>D1 at 70 keV.

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  • 高プロトン伝導性ガラス膜の合成

    Grant number:07239229  1995

    日本学術振興会  科学研究費助成事業  重点領域研究

    阿部 良弘, 細野 秀雄, 春日 敏宏, 野上 正行

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    Grant amount:\2000000 ( Direct Cost: \2000000 )

    室温で高い電気伝導度を有し、化学安定性に優れた高プロトン伝導性ガラス膜の開発するために、伝導度とガラス内のプロトンの結合状態との関連性を調べ、また、高プロトン伝導性ガラスを得るために、より多くの水素結合性プロトンを含有したガラスの組成および作製条件についての検討を行った。
    ガラスは、大面積化や薄膜化などの点で、焼結体に比べて利点があり、水素ガスセンサーや水素燃料電池などの固体電解質としての応用が期待できる。
    無アルカリで分子状の水を含まないリン酸塩ガラスの伝導度(σ_<417>)は、プロトン濃度([H^+](mol/l))に対して実験式:σ_<417>=A_0[H^+]^2で表され、A_0はOH結合エネルギー(v_<OH>)とlogA_0=-0.00970v_<OH>+17.1で表されることが分かった。このことから、高プロトン伝導性ガラスは、“低いv_<OH>"、“高い[H^+]"で実現できると予測できた。
    多くの分子状の水を含むガラスをゾル・ゲル法によって作製した。プロパノールに溶解したP_2O_5にZr(OC_3H_7)_4を反応させ、加水分解した後、60〜120℃で数週間乾燥させて1〜2mm厚のゲル膜を得た。DTA-TG測定から、ゲルには分子状の水(200℃付近までに離脱する水)が多く含まれているのがわかった。50%の相対湿度中で測定した伝導度は高く、60〜70℃で乾燥して作ったゲルの、室温での伝導度は10^<-2>S/cmのオーダーであった。また、その活性化エネルギーは0.15〜0.18eVであった。
    このような値は、これまで最高の高プロトン伝導性を示すとされている他の結晶での値と同等か、それより高い可能性があり、伝導性の高い“Superprotonic conductor"とも呼ぶべき非晶体が合成できることがわかってきた。今後、化学安定性や大面積化などを含め、実用性のあるガラス膜の作製の検討を行っていく。

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  • 物質場制御による電子活性無機系材料の創製

    Grant number:07355012  1995

    日本学術振興会  科学研究費助成事業  総合研究(B)

    川副 博司, 細野 秀雄, 小川 恵一, 鯉沼 秀臣, 鈴木 謙爾, 山中 昭司

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    Grant amount:\1700000 ( Direct Cost: \1700000 )

    本研究では物質場制御による電子活性無機系材料の創製に関する調査研究を行い、重点領域研究の計画として具体化した。これを以下に要約する。
    1)本計画では、機能の発現および構造の形成の両面においては、結晶表面場などの物質場が中心的役割を果たすという認識から出発する。
    2)本計画では、国際発信型研究を指向している。具体的には、新奇機能材料を常に発見し続けるための基礎科学の構築を目標としている。そのために、新奇機能材料の感覚的化学設計からこれらを発見・発掘するグループ、発見された物質系を対象とし、物質場を応用して、これらを原子オーダーで制御された構造体につくりあげる合成科学を開拓するグループ、および電子活性機能の発現と合成反応における物質場の役割を理論化し、物質設計の新たな基盤を構築するグループを配置し、相互の有機的協力により新材料の創製をはかる。
    3)本計画では、特に酸化物に注目することにした。酸化物はこれまで、一般には電子的不活性材料と見なされてきた。しかし最近、主として本計画に参加する研究者らによって、これらは実は電子的活性材料であることが明らかにされつつある。即ちワイドキャップpn伝導体の発見、ペロブスカイト構造を母体にしたエピタキシ-薄膜積層構造形成技術の確立、Siクラスレート超伝導体の発見などの先駆的実績である。

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  • 無機融体化学の新展開

    Grant number:07355021  1995

    日本学術振興会  科学研究費助成事業  総合研究(B)

    横尾 俊信, 田中 啓司, 河村 雄行, 細野 秀雄, 前川 尚

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    Grant amount:\2100000 ( Direct Cost: \2100000 )

    本総合研究(B)『無機融体化学の新展開』の研究班員の半数は、産官学から成る『ガラスプロセス研究会』を前身とする研究会のメンバーであり、この構成員にさらに高温融体関連の研究を行っている分野の異なるアクティブな若手研究者を加え、無機高温融体に関わる基礎的現象を解明し、実際の材料製造およびプロセスの開発に重要な科学的基盤を提供することを目的として研究組織を構成した。本調査・研究を遂行するために、次の7つの班を設置した。
    (1)融体の化学 (2)融体の構造 (3)融体の物性
    (4)融体の高温反応 (5)融体の化学工学 (6)融体のシュミレーション
    (7)融体の応用プロセス
    これら各班のリーダーと事務局で構成される総括班で全体をまとめた。第1回目の総括班会議を5月に開催した。そこでは、各研究班毎の分担者および研究方針を研究方針を決定すると共に全体の研究計画を明確にした。
    さらに、京都くに荘において第1回全体会議、第2回総括班会議を開催した。全体会議においては各班が各研究テーマについて行なった研究成果・調査結果を発表し、さらにそれをベースにして重点領域研究への発展させるためには、共同研究として何が不足しているかを厳密にチェックした。2回目の総括班においては、全体会議での検討結果に基づいて研究成果報告をまとめ、さらに重点領域研究へと推進していくために必要な事を整理し、細心の検討を加え、必要な組織の基盤整備について十分議論した。
    その後、研究分担者全員に対して全体会議での成果を踏まえて、無機融体化学の体系化された科学的基盤の確立を目指して各研究者がどのような成果をあげ、どのような寄与ができるかをアンケートにて調査した。その結果及び全体会議での検討結果を総合して、重点領域研究の組織及び研究内容を再吟味し、その結果について第3回総括班会議にて最後の検討をおこなった。その結果を踏まえて、重点領域研究の申請書の作成を行った。
    重点領域名はあくまで高温融体を取り扱う工学プロセスへの貢献を目指して『高温融体テクノロジー-無機材料の新合成プロセスを目指して』とした。研究班は総合研究(B)の7班から研究の目的をより明確にするために以下の4班に減らした。
    (1)融体の高温化学反応、(2)高温融体のその場測定法の確立、(3)高温融体設計と物性シミュレーション、(4)高温融体応用の新規プロセスの探索

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  • Thin Film Processing of Newly Found, Conductive Transparent Oxides

    Grant number:06555206  1994 - 1995

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Developmental Scientific Research (B)

    KAWAZOE Hiroshi, TANJI Hiroaki, UEDA Naoyuki, HOSONO Hideo

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    Grant amount:\8100000 ( Direct Cost: \8100000 )

    Resurlts obatined in the present study are summarized in the following.
    1) Fabrication of single crystals of n-type conductive oxides with ultra wide band gap. Single crystals of ZnGa_2O_4 spinel and Ga_2O_3, both having band gap larger than 4.5eV and there by transparent in UV region, were successfuly produced by flux method.
    2)Control of conductivity of ZnGa_2O_4 and Ga_2O_3 single cystals. By exposing the single crystal to reducing atmosphere at a moderate temperature, concentration of oxygen vacancies was controlled arbitrarily. The oxygen vacancy is a donor of electrons. It was experimentally evidenced that the rutile chain which is a linear chain composed by edge sharing of oxygan octahedra is a high way of electrons by estimating Holl mobilities of partialar directions of Ga_2O_3 single cystal.
    3)Finding of amorphous tranparent and metallic conductive oxides. This type of material fascilitates fabrication of large scale optical waveguides which can transmit electricity simulataneoasly. Glassy, transparent and metallic oxides were found in the CdO rich composition region of CdO-GeO_2 and CdO-PbO_2 systems. Preocessing conditions for fabricating the thin films were optimiged.
    4)Proposition of working hypotesis for finding p-type conductive wide gap oxides. Most essential problem in this study is how we can modify localized nature of the top of valence band in oxides. In typical oxides the uppermost level of valence band is composed exclusively by O_2p atomic orbitak. Because of low energy of O_2p level, this is almost totally localizing on a single oxygen, and delocalization is not expected. Two different approaches were utilized in the problem : One is selecting the cations with ns^2 lone pair such as Tl^+, Pb^<2+> and Bi^<3+>. Another is selecting nd^<10> closed shell, cations within those cations in which the energy of the filled d band is expected to highest must be selected.

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  • CONTROL OF CONDUCTION BEHAVIOR OF INORGANIC CRYSTALS WITH WIDE BAND GAP

    Grant number:06453080  1994 - 1995

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for General Scientific Research (B)

    KAWAZOE Hiroshi, UEDA Naoyuki

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    Grant amount:\7100000 ( Direct Cost: \7100000 )

    Results obatined in the present study are summarized in the following.
    1)Chemical design of n-type conductive and wide gap oxides. Necessary conditions for realizing high mobility of an electron in a conduction band are : A.Complex oxides of p-block cations which have an electronic configuration of (n-1)d^<10>S^0 ; B.Oxygen polyhedra of the cations constitute an edge sharing linear chain which is a highway of an electron ; C.The phase has hopefully a vacant cation site. This is expected to act as a doping site of excess cations.
    2)On the basis of the hypothesis MgIn_2O_4, CdGa_2O_4 and ZnGa_2O_4 with spinel structure were selected. These materials were found to be an n-type conductor and transparent for visible light because of wide band gap larger than 3.5eV.
    3)Finding of electron-carrier-generation by cation-implantation. Generation of electron carriers in insulating thin film of MgIn_2O_4 by Li^+-or H^+-implantation was observed. An yield of carrier electron was found to be -100%, when the flux of implanted ions was less than 10^<16>cm^<-2>.
    4)Some new transparent and conductive oxides with pyrochlore structure were newly found.
    5)In a course of study on wide gap p-type conducting oxides some S^0-S^2 mixed valence phases were found. These include Pb^<2+>-Pb^<4+>, Bi^<3+>-Bi^<5+> and Tl^+-Tl^<3+> mixed valence states.

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  • Creation of Novel Quantum Dot embedded in Glasses by Ion Implantation and Their Optical Properties

    Grant number:06453120  1994 - 1995

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for General Scientific Research (B)

    HOSONO Hideo, MATSUNAMI Noriaki

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    Grant amount:\6600000 ( Direct Cost: \6600000 )

    The purposes of this research project are to create novel quantum dot embedded in oxide glasses by ion implantation and to examine the optical properties of the resulting materials. The results obtained are summarized as follows :
    (1) Dual structure nano sized colloid particles (Cu core and a Cu_2O shell) embedded in glasses have been created by sequential implantation of Cu ions followed by F ions in amorphous silica. Although the presence of nanosized clusters and electron diffraction patterns indexed as Cu were observed by TEM observation, no Cu plasmon band which should appear at-2eV was perceived.
    (2) A striking difference in results from different implantation sequences, the optical absorption spectra and structure of nanosized colloid particles formed by changing the implantation sequence of Cu and F ions. The difference is explained in terms of a model combining energy depositions with chemical interactions of implanted F ions with ions an amorphous SiO_2.
    (3) Nanometer-sized crystalline Ge colloid particles have been formed by implantation of protons into substrate glasses having a composition of 1GeO_2-9SiO_2 to a fluence of 1x10^<18> cm^<-2> at an energy of 1.5 MeV at toom temperature without post-thermal annealing. Intensities of the absorption band due to Ge particles reach a maximum at-30mum from the surface and their depth profile is close to that of the electronic energy loss.
    (4) The primary facor controlling Cu-colloid formation in the mplanted glasses is not the change in the continuity of silica network structure but change in the strength of solvation of charged states of implanted ions.

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  • DEVELOPMENT OF GLASSES FOR HIGH EFFICIENT BRAGG REFRACTION GRATINGS

    Grant number:05555235  1993 - 1994

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Developmental Scientific Research (B)

    HOSONO Hideo, HISHIDA Shunichi, NISHII Junji, AWAZU Koichi, MUTA Kenichi

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    Grant amount:\7000000 ( Direct Cost: \7000000 )

    (1) Origin of photo-induced refractive index changes(PIRC)in GeO_2-SiO_2 glasses were found to be due to photochemical conversion of an oxygen vacancy(neutral oxygen monovacancy, NOMV,)coordinated by two Ge^<4+> ions into a GeE'center which has an intense absorption band at around 6eV.Thus, we concluded that enhancement of the NOMV leads to that of photosensitivity in SiO_2 : Ge glasses.
    (2) Heat treatment of SiO_2 : Ge glasses in a H_2 atmosphere at 500 C,which is far below Tg, for 70 hincreased selectively the concentrations of the NOMV by an order of magnitude.
    (3) It was found that concentrations of the NOMV were enhanced by one or two orders of magnitude by rf-sputtered deposited thin glass films of SiO_2 : Ge by heating at 350C for 30 min in vacuum.
    (4) Concentrations of the NOMV were successfully enhanced over 3 to 4 orders of magnitude by implanting protons into SiO_2 : Ge glasses. Photobleachable optical band peaking at 5 eV were created in SiO_2 glasses implanted with implanted ions with electropositive nature such as P and B.These bands were simply bleached with illumination with 5 ev light and no formation of Si E' center was seen. The former and the latter gave positive and negative refractive index changes after uvbleaching.
    (5) Although various optical bands associated with Al ions were identified in synthetic SiO_2 : Alglasses irradiated with gamma and excimer lasers, none of the bands showed photobleaching nature.

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  • イオン注入によるフォトニックガラスの創製

    Grant number:04650699  1992 - 1993

    日本学術振興会  科学研究費助成事業  一般研究(C)

    細野 秀雄, 松波 紀明

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    Grant amount:\2000000 ( Direct Cost: \2000000 )

    金属および半導体のナノメートルナイズのコロイド粒子のイオン注入によるガラス中への生成を検討して以下の成果を得た。
    1)リンを注入することにより3〜4nmの大きさのアモルファスリンコロイドが生成することができた。そして、熱処理により1〜2μmまでコロイドサイズを大きくしたサンプルとの比較により、約0.4eVのバンドギャップのブルーシフトが観測された。
    2)上記の試料について縮帯四波混合法(レーザーペルス巾20nsec)により3次の非線形光学感受率(χ^<(3)>)を測定し、χ^<(3)>の値として10^<-6>esuを得た。この値はCdSe微結晶分散ガラスに匹敵し、アモルファス半導体のナノサイズコロイドが結晶半導体コロイドと同様な大きいχ^<(3)>を示す場合があることを初めて見出したことになる。
    3)Agをシリカガラスとリン酸塩ガラスに注入し、コロイドの生成をラザフォード後方散乱(RBS)と透過型電子顕微鏡観察により検討した。シリカについてはAgコロイドのサイズとRBSの巾の関係を、リン酸ガラスについてはコロイドの生成域がイオンビームの径よりも大きいという新しい現象をそれぞれ見出した。
    4)シリカガラスへイオン注入を行った場合、どんなインプラントがコロイドを生成するか?ということを予想するためのクライテリオンを提案した。

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  • SUPPRESSION OF DEFECT FORMATION IN ULTRAVIOLET OPTICAL MATERIALS BY MEASURING AND CONTROLLING ABSORBED GAS.

    Grant number:04555189  1992 - 1993

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Developmental Scientific Research (B)

    IMAGAWA Hiroshi, UTSUGIDA Yoshinori, HOSOKAWA Tadatoshi, NONAKA Hidehiko, ARAI Kazuo, HOSONO Hideo

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    Grant amount:\4600000 ( Direct Cost: \4600000 )

    (1) Optical materials such as silica glass were heated in ultra high vacuum and the evolved gases were analyzed using "the evolved gas analyzer(1992)" and "the radiation pyrometer(1993)". Silica glass containing oxygen-deficient centers were heated in oxygen gas atmosphere, and the decay kinetics of the defect centers were analyzed. Latter results are to be published in J.Non-cryst. Solids.
    (2) We found that mechanical polishing produces a degraded surface layr which results in uv-vuv surface extra loss for silica glass, while such loss was not observed for crystalline quartz. We implanted various ions on silica glass in order to study modified surface and have succeeded in theoretical explanation of chemical reactions between the implanted ions and the matrix silica by a new model. The latter results are in press (Nuclear Instrum. Methods in Physics Research B).
    (3) We studied simultaneous production of the E' centers and the nonbridging oxygen hole centers in silica glass during ionizing irradiation, and revealed that those centers originate either from the normal Si-O bond or from the oxygen-deficient precursors or oxygen-excess processors. Those results were published in Physical Review B (1993).
    (4) We studied correlation between electrical conductivities and optical absorption for variously reduced rutile single crystals. We found some species agreed with the Bogomolov's correlation based on the small polaron model, while some ones don't.
    (5) We measured VUV absorption spectra for synthetic quartz produced under various conditions and found intensities of Gaussian bands peaking at 8.0 eV increase with increasing impurities (5th Fall Symposium, Japan Ceramic society, Oct. 1992).

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  • 細野透明電子活性プロジェクト

    1991.10 - 2004.9

    JST-ERATO 

    細野 秀雄

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    Authorship:Principal investigator  Grant type:Competitive

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  • Preparation of Fibers of Bi-Based Superconducting Ceramics

    Grant number:02555160  1990 - 1991

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Developmental Scientific Research (B)

    ABE Yoshihiro, KUBO Yukio, HOSONO Hideo

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    Grant amount:\2700000 ( Direct Cost: \2700000 )

    1. Fine rods, Coils :
    (1)A given shape of precursor ceramics such as fine rods mm diameter)and coils in the system of Bi-Sr-Ca-Cu-0 was successfully fabricated by a vacuum casting of the melts into a given shape of silica glass tube ; the glassy precursors, as-cast specimens, were converted into superconducting polycrystalline ceramics by reheating them at around 800'C. The optimum heating conditions for heating temperature and-duration time were determined, and discussed in terms of oxygen absorption during heating of the specimen. Superconducting fine rods(Tc 85K)up to 50 cm length were easily prepared by this process.
    (2)Up to date, the precursor as-cast ceramics have been heated in oxygen-containing atmosphere in order for the conversion into superconducting ceramics. In this study, we found that the as-cast rods of Ag2O-doped melts are converted into superconductor when heated in a vacuum sealed-vessel, i. e., in oxygen-free atmosphere. This finding indicates x, 7e are able to fabricate a desired shape of superconducting Bi-based ceramics sealed in glasses.
    2. Whiskers : Optimum preparation conditions of superconducting whiskers (2212 phase) were determined and discussed in terms of Al_2O_3 additives.

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  • Examination of Possibility of Formation of Aggregated Color Centers in Inorganic Glasses and Their Application to Photochemical Hole Burning

    Grant number:01550597  1989 - 1990

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for General Scientific Research (C)

    HOSONO Hideo

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    Grant amount:\2000000 ( Direct Cost: \2000000 )

    Aggregated F-centers such as M and R-centers show photochemical hole burning (PHB) in alkali halide crystals. If aggregated oxygen-deficient type point defects are produced in inorganic glasses, we may expect a possibility that PHB is realized in inorganic glasses without accompanying doping of a dye molecule as a PHB center. In this study, we examined the formation of aggregated color centers in inorganic glasses and of a pertinent hole in their optical absorption bands with a tunable laser light.
    The results obtained are summarized as follows :
    (1) Calcium aluminate glasses melted in strongly reduced atmosphere were found to show photochromism. Light-induced EPR led the conclusion that the photochromic center is an electron trapped at the site of oxygen vacancy surrouned by Ca^<2+> ions, i. e., likeF^+ center in CaO. No spectral hole formation was observed when the laser light illuminated the absorption band centered around 560 nm at 4.2K.
    (2) Two types of oxygen-deficient defects were produced in SiO_2 glass by implantation of Si^+orP^+, Si-Si bonds and neutral oxygen vacancies. Their concentrations are compatible to those of implanted ions, suggesting that implanted ions react chemically with oxygen in the substrate structure leaving oxygen deficiency defects. No zoro-phonon line was observed for either of these defects.

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  • Preparation and Application of New Amorphous Materials in Non-chalcogenide System

    Grant number:62470062  1987 - 1989

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for General Scientific Research (B)

    ABE Yoshihiro, YAMASHITA Kimihito, HOSONO Hideo, MAEDA Masunobu

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    Grant amount:\7300000 ( Direct Cost: \7300000 )

    Two new photosensitive amorphous materials were found in non- chalcogenide systems; dopant-free calcium aluminate glasses and amorphous red phosphorus.
    Binary calcium aluminate glasses show two types of photosensitivities with different nature to ultravioletradiation, stable coloring( bleachable by heating tip to 200゜C) and photochromism. No doping of optically active components such as Au, Ag or halogens is required for the appearance, which is totally differs from photosensitive glasses so far. These insensitivities can be imparted to calcium aluminate glasses with the same chemical compositions by only changing the melting atmosphere such as oxidizing or reducing. These sensitivities were attributed to the presence of oxygen-related point defects (oxygen-excess type or oxygen vacancy) in the glasses.
    Amorphous red phosphorus films were successfully prepared by rf sputtering method. These films were found to show three photoinduced phenomena, photodarkening, and photodoping of silver.
    These observation is the fist report in non-chacogenide systems.
    Further, photobleaching was found, which has been not observed in chacogenide systems so far. The results were explained by that the top of the valence band is composed of p sigina orbital,i.e.
    band gap illumination dissociates P-P bonds. The resulting P_2 molecule or P radicals rearrange or react with oxygen molecule, depending on the atmosphere. No such a photo-induced bond dissociation is observed because the lone pair orbitals occupy the top of the valence band in chacogenides.

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  • Studies on Discoloration Ploblems of Silica Glass Used for High-Power Ultraviolet Optical Systems and on the Improvement.

    Grant number:62850141  1987 - 1988

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Developmental Scientific Research

    IMAGAWA Hiroshi, ARAI Kazuo, KAWAZOE Hiroshi, HOSONO Hideo, ABE Yoshihiro, YOKOKAWA Kiyoshi

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    Grant amount:\6300000 ( Direct Cost: \6300000 )

    A. Arrangement of a vacuum-ultraviolet spectrophotometer for silica glass.
    In 1987 we purchased an VUV spectrophotometer (Jasco Model VUV-200) with a standard sample-chamber. Data obtained with it were compared with those obtained for the same samples using SR at ETL for reduction of measurement error. In 1988 we purchased an sample chamber of an improved type which can measure weak absorption more precisely using longer samples.
    B. VUV absorption due to atomistic defects in silica glasses and its dependency on prepration histories.
    We investigated quantitatively, an exponential OH tail over 7 to 8ev, a band at 7.6eV due to oxygen-deficient centers observedin glasses prepared by CVD and halogen gas dehydra-tion, and an extra tail in glasses containing oxygen-excess centers.
    C. Color centers induced by excimer-laser irradiation and their suppression.
    UV transmission of silica glass is severly deteriorated by an absorption band at 217nm or a band at 260nm induced by excimer-laser irradiation. We found heat-treatment in H_2 markedly supresses growth of both bands for high-OH glasses, but it enhances growth of the 217nm band for oxygen-deficient glass. We have obtained usuful knowledges of the discolora-tion problem of silica glass applied to high-power UV optics and of how to suppress it.

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  • Development and Its application of Calcium Phosphate Glass-Ceramics for biomaterials

    Grant number:61850141  1986 - 1988

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Developmental Scientific Research

    ABE Yoshihiro, WATANABE Akira, TSUTSUMI Sadami, HOSONO Hideo

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    Grant amount:\4100000 ( Direct Cost: \4100000 )

    The purpose of this investigation is to develop new calcium phosphate glass-ceramics for sugical and dental use, and to examine how they are biocompatible or not when implanted. Two kinds of glass-ceramics have been developed; one is unidirectionally crystallized CaO-P_2O_5 glass-ceramics, and the other is randomly crystallized glass-ceramics based on mainly calcium phosphate.
    (1). The unidirectionally crystallized glass-ceramics exhibit high bending strength and high toughness, and good bonding properties with natural bone. We believe that bone implant materials should have low Young's modulus as nearlly as natural bone's; from this view point, the unidirectionally crystallyzed glass-ceramics are to be preferable. However, they have weak points in that chemical durability is not so high to be decreased in mechanical strength with increasing time.
    (2). The randomly crystallized glass-ceramics in the system of CAO-A1_2O_3-P_2O_5 and CaO-TiO_2-P_2O_5 have high precise castability(shapability) when cast from the molten state. These are suitable for artificial dental crown materials, because of its high shapability, high mechanical strength,as well as high chemical durability. Micro-porous glass-ceramics have been developed by leaching with acid Na_2O-CaO-TiO_2-P_2O_5 glass-ceramics.
    (3). Biocompatibility has been examined for calcium phosphate glass-ceramics by medical researchers.

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