-:シュトゥットガルト大学物理学研究所(西独) 研究員

1986

-:東京工業大学 助手

1984

-:

1984

Semiconductor Lasers and Photonic Integrated Circuits

（分担）Chapman & Hall  1994 

Quantum-Well Lasers

Academic Press  1993 

Quantum-Well Lasers

（分担）Academic Press  1993 

Quantum-Well Lasers

Academic Press  1993 

Quantum-Well Lasers

（分担）Academic Press  1993 

Coherent power combination in highly integrated resonant tunneling diode oscillators with slot antennas

Safumi Suzuki, Masahiro Asada

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   46 ( 45-49 )   L1108 - L1110   2007.12

Suppression of leakage current of CdF2/CaF2 resonant tunneling diode structures grown on Si(100) substrates by nanoarea local epitaxy

Tohru Kanazawa, Atsushi Morosawa, Ryo Fujii, Takafumi Wada, Yusuke Suzuki, Masahiro Watanabe, Masahiro Asada

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 6A )   3388 - 3390   2007.6

Voltage-controlled harmonic oscillation at about 1 THz in resonant tunneling diodes integrated with slot antennas

Masahiro Asada, Naoyuki Orihashi, Safumi Suzuki

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 5A )   2904 - 2906   2007.5

Room temperature negative differential resistance of CdF2/CaF2 double-barrier resonant tunneling diode structures grown on Si(100) substrates

Tohru Kanazawa, Ryo Fujii, Takafumi Wada, Yusuke Suzuki, Masahiro Watanabe, Masahiro Asada

APPLIED PHYSICS LETTERS   90 ( 9 )   092101   2007.2

Proposal of Resonant Tunneling Diode Oscillators with Offset-Fed Slot Antennas in THz and Sub-THz Range

S. Suzuki, M. Asada

Jpn. J. Appl. Phys.   46 ( 1 )   119 - 121   2007

Proposal of Resonant Tunneling Diode Oscillators with Offset-Fed Slot Antennas in THz and Sub-THz Range

S. Suzuki, M. Asada

Jpn. J. Appl. Phys.   46 ( 1 )   119 - 121   2007

Experiment and theoretical analysis of voltage-controlled sub-THz oscillation of resonant tunneling diodes

Masahiro Asada, Naoyuki Orihashi, Safumi Suzuki

IEICE TRANSACTIONS ON ELECTRONICS   E89C ( 7 )   965 - 971   2006.7

Room-temperature electroluminescence from single-period (CdF2/CaF2) inter-subband quantum cascade structure on si substrate

K Jinen, T Kikuchi, M Watanabe, M Asada

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   45 ( 4B )   3656 - 3658   2006.4

Frequency mixing characteristics of room temperature resonant tunneling diodes at 100 and 200 GHz

T Hori, T Ozono, N Orihashi, M Asada

JOURNAL OF APPLIED PHYSICS   99 ( 6 )   064508   2006.3

One THz harmonic oscillation of resonant tunneling diodes

N Orihashi, S Suzuki, M Asada

APPLIED PHYSICS LETTERS   87 ( 23 )   233501   2005.12

Experimental and theoretical characteristics of sub-terahertz and terahertz oscillations of resonant tunneling diodes integrated with slot antennas

N Orihashi, S Hattori, S Suzuki, M Asada

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   44 ( 11 )   7809 - 7815   2005.11

Voltage-controlled sub-terahertz oscillation of resonant tunnelling diode integrated with slot antenna

N Orihashi, S Hattori, S Suzuki, M Asada

ELECTRONICS LETTERS   41 ( 15 )   872 - 874   2005.7

Photon-assisted tunneling in resonant tunneling structures and its application to terahertz devices

Masahiro Asada

74 ( 5 )   587 - 592   2005

共鳴トンネル構造における光支援トンネルとテラヘルツデバイス

浅田雅洋

応用物理   74 ( 5 )   587 - 592   2005

Mutual injection locking between sub-THz oscillating resonant tunneling diodes

S Suzuki, N Orihashi, M Asada

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   44 ( 46-49 )   L1439 - L1441   2005

Millimeter and submillimeter oscillators using resonant tunneling diodes with stacked-layer slot antennas

N Orihashi, S Hattori, M Asada

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   43 ( 10A )   L1309 - L1311   2004.10

Increase in drive current by Pt/W protection on short-channel Schottky source/drain metal-oxide-semiconductor field-effect transistors with metal gate

H Sato, H Sato, T Iguchi, M Asada

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   43 ( 9A )   6038 - 6039   2004.9

Proposal and analysis of a semiconductor klystron device using two-dimensional electron gas for terahertz amplification and oscillation

M Asada

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   43 ( 9A )   5967 - 5972   2004.9

Theoretical analysis of interaction between electron beam and electromagnetic wave for unidirectional optical amplifier

Masahiro Asada, Minoru Yamada

Journal of Applied Physics   95 ( 9 )   5123 - 5130   2004.5

Theoretical analysis of interaction between electron beam and electromagnetic wave for unidirectional optical amplifier

M Asada, M Yamada

JOURNAL OF APPLIED PHYSICS   95 ( 9 )   5123 - 5130   2004.5

Proposal and analysis of a traveling-wave amplifier in terahertz range using two-dimensional electron gas

M Asada

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   43 ( 4A )   1332 - 1333   2004.4

Structural Dependence of the Negative Differential Resistance Characteristics of CdF2/CaF2 Resonant Tunneling Diodes grown on Si using Nanoarea Local Epitaxy

MASAHIRO ASADA

IEEE Transactions on Nanotechnology   2004

Structural Dependence of the Negative Differential Resistance Characteristics of CdF2/CaF2 Resonant Tunneling Diodes grown on Si using Nanoarea Local Epitaxy

MASAHIRO ASADA

IEEE Transactions on Nanotechnology   2004

Proposal and analysis of a traveling-wave amplifier in terahertz range using two-dimensional electron gas

Masahiro Asada

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers   43 ( 4 A )   1332 - 1333   2004

Proposal and Analysis of a Semiconductor Klystron Device for Terahertz Range Using Two-Dimensional Electron Gas

MASAHIRO ASADA

Japanese Journal of Applied Physics   43 ( 9A )   5967 - 5972   2004

Theory of superradiance from photon-assisted tunneling electrons and its application to terahertz device

M Asada

JOURNAL OF APPLIED PHYSICS   94 ( 1 )   677 - 685   2003.7

Quantum theory of a semiconductor klystron

MASAHIRO ASADA

Physical Review B   67 ( 15 )   115303 1-8   2003

Theory of superradiance from photon-assisted tunneling electrons and its application to terahertz devices

MASAHIRO ASADA

Journal of Applied Physics   94 ( 1 )   677 - 685   2003

Quantum theory of a semiconductor klystron

MASAHIRO ASADA

Physical Review B   67 ( 15 )   115303 1-8   2003

Analysis and fabrication of P-type vertical PtSi Schottky source/drain MOSFET

M Tsutsui, T Nagai, M Asada

IEICE TRANSACTIONS ON ELECTRONICS   E85C ( 5 )   1191 - 1199   2002.5

Dependence of drain current on gate oxide thickness of p-type vertical PtSi Schottky source/drain MOSFET

M.Tsutsui M.Asada

Japan. J.Appl.Phys.   41 ( 1 )   54 - 58   2002

Dependence of drain current on gate oxide thickness of p-type vertical PtSi Schottky source/drain MOSFET

M.Tsutsui M.Asada

Japan. J.Appl.Phys.   41 ( 1 )   54 - 58   2002

Theoretical analysis of terahertz harmonic generation in resonant tunneling diodes

MASAHIRO ASADA

Japan.J.Appl.Phys.   40 ( 12 )   6809 - 6810   2001

Nonlinear terahertz gain estimated from multiphoton-assisted tunneling in resonant tunneling diodes

M.Asada N.Sashinaka

Japan.J.Appl.Phys.   40 ( 9A )   5394 - 5398   2001

Density-matrix modeling of terahertz photon-assisted tunneling and optical gain in resonant tunneling structures

MASAHIRO ASADA

Japan.J.Appl.Phys.   40 ( 9A )   5251 - 5256   2001

Theoretical analysis of terahertz harmonic generation in resonant tunneling diodes

MASAHIRO ASADA

Japan.J.Appl.Phys.   40 ( 12 )   6809 - 6810   2001

Nonlinear terahertz gain estimated from multiphoton-assisted tunneling in resonant tunneling diodes

M.Asada N.Sashinaka

Japan.J.Appl.Phys.   40 ( 9A )   5394 - 5398   2001

Density-matrix modeling of terahertz photon-assisted tunneling and optical gain in resonant tunneling structures

MASAHIRO ASADA

Japan.J.Appl.Phys.   40 ( 9A )   5251 - 5256   2001

Epitaxial growth and electrical characteristics of CaF2/Si/CaF2 resonant tunneling diode structure grown on Si(111) 1-degree-off substrate

M.Watanabe, Y.Iketani, M.Asada

Japan.J.Appl.Phys.   39 ( 10A )   L964 - L967   2000

Estimation of interwell terahertz gain by photon-assisted tunneling measurement in triple-barrier resonant tunneling diodes

M.Asada, Y.Oguma, N.Sashinaka

Appl.Phys.Lett.   77 ( 5 )   618 - 620   2000

Observation of terahertz photon-assisted tunneling in triple-barrier resonant tunneling diodes integrated with patch antenna

N.Sashinaka, Y.Oguma, M.Asada

Japan.J.Appl.Phys.   39 ( 8 )   4899 - 4903   2000

Epitaxial growth and electrical characteristics of CaF2/Si/CaF2 resonant tunneling diode structure grown on Si(111) 1-degree-off substrate

M.Watanabe, Y.Iketani, M.Asada

Japan.J.Appl.Phys.   39 ( 10A )   L964 - L967   2000

Estimation of interwell terahertz gain by photon-assisted tunneling measurement in triple-barrier resonant tunneling diodes

M.Asada, Y.Oguma, N.Sashinaka

Appl.Phys.Lett.   77 ( 5 )   618 - 620   2000

Observation of terahertz photon-assisted tunneling in triple-barrier resonant tunneling diodes integrated with patch antenna

N.Sashinaka, Y.Oguma, M.Asada

Japan.J.Appl.Phys.   39 ( 8 )   4899 - 4903   2000

A 25-nm-long channel metal-gate p-type Schottky source/drain metal-oxide-semiconductor field effect transistor on SIMOX substrate

A.Itoh M.Saitoh, M.Asada

Japan.J.Appl.Phys.   39 ( 8 )   4757 - 4758   2000

A 25-nm-long channel metal-gate p-type Schottky source/drain metal-oxide-semiconductor field effect transistor on SIMOX substrate

A.Itoh M.Saitoh, M.Asada

Japan.J.Appl.Phys.   39 ( 8 )   4757 - 4758   2000

Analysis of short-channel Schottky source/drain metal-oxide-semiconductor field-effect transistor on silicon-on-insulator substrate and demonstration of sub-50-nm n-type devices with metal gate

W Saitoh, A Itoh, S Yamagami, M Asada

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   38 ( 11 )   6226 - 6231   1999.11

Resonant tunneling diodes in Si/CaF2 heterostructures grown by molecular beam epitaxy

M.Tsutsui M.Watanabe, M.Asada

Japan.J.Appl.Phys.   38 ( 8B )   L920 - L922   1999

Terahertz response with gradual change from square-law detection to photon-assisted tunneling in tripple-barrier resonant tunneling diodes

Y.Oguma, N.Sashinaka, M.Asada

Japan.J.Appl.Phys.   38 ( 7A )   L717 - L719   1999

Resonant tunneling diodes in Si/CaF2 heterostructures grown by molecular beam epitaxy

M.Tsutsui M.Watanabe, M.Asada

Japan.J.Appl.Phys.   38 ( 8B )   L920 - L922   1999

35nm metal gate p-type metal oxide semiconductor field-effect transistor with PtSi Schottky source/drain on separation by implanted oxygen substrate

W.Saitoh, S.Yamagami, A.Itoh, M.Asada

Japan.J.Appl.Phys.   38 ( 6A/B )   L629 - L631   1999

35nm metal gate p-type metal oxide semiconductor field-effect transistor with PtSi Schottky source/drain on separation by implanted oxygen substrate

W.Saitoh, S.Yamagami, A.Itoh, M.Asada

Japan.J.Appl.Phys.   38 ( 6A/B )   L629 - L631   1999

Terahertz response with gradual change from square-law detection to photon-assisted tunneling in tripple-barrier resonant tunneling diodes

Y.Oguma, N.Sashinaka, M.Asada

Japan.J.Appl.Phys.   38 ( 7A )   L717 - L719   1999

Detection Time Shortening for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscope

N.Kikegawa B.Zhang, Y.Ikeda, N.Sakai, K.Furuya, M.Asada M.Watanabe, W.Saitoh

Japan.J.Appl.Phys.   38 ( 4A )   2108 - 2113   1999

Detection Time Shortening for Observation of Hot Electron Spatial Distribution by Scanning Hot Electron Microscope

N.Kikegawa B.Zhang, Y.Ikeda, N.Sakai, K.Furuya, M.Asada M.Watanabe, W.Saitoh

Japan.J.Appl.Phys.   38 ( 4A )   2108 - 2113   1999

MIS Emitter with Epitaxial CaF2 Layer as Insulator

Y.Miyamoto, A.Yamaguchi, K.Oshima, W.Saitoh, M.Asada

J.Vac.Sci.Tech.   B16 ( 2 )   851   1998

MIS Emitter with Epitaxial CaF2 Layer as Insulator

Y.Miyamoto, A.Yamaguchi, K.Oshima, W.Saitoh, M.Asada

J.Vac.Sci.Tech.   B16 ( 2 )   851   1998

Reduction of electrical resistance of nanometer-thick CoSi2 film on CaF2

Wataru Saitoh, Kaoru Mori, Hidekazu Sugiura, Takeo Maruyama, Masahiro Watanabe, Masahiro Asada

Jpn. J. Appl. Phys.   36 ( 7A )   4470 - 4471   1997

Reduction of electrical resistance of nanometer-thick CoSi2 film on CaF2

Wataru Saitoh, Kaoru Mori, Hidekazu Sugiura, Takeo Maruyama, Masahiro Watanabe, Masahiro Asada

Jpn. J. Appl. Phys.   36 ( 7A )   4470 - 4471   1997

A Possible Three-Terminal Amplifier Device in the Terahertz Frequency Range Using Photon-Assisted Tunneling

MASAHIRO ASADA

Japanese Journal of Applied Physics   35 ( 6A )   L685 - L687   1996

A Possible Three-Terminal Amplifier Device in the Terahertz Frequency Range Using Photon-Assisted Tunneling

MASAHIRO ASADA

Japanese Journal of Applied Physics   35 ( 6A )   L685 - L687   1996

Room-Temperature Observation of Negative Differential Resistance in a Metal(CoSi2)/Insulator(CaF2)Quantum Interference Transistor Structure

MASAHIRO ASADA

Physica B   227 ( 1/4 )   213 - 215   1996

Proposal and Analysis of Very Short Channel Field Effect Transistor Using Vertical Tunneling with New Heterostructures on Silicon

MASAHIRO ASADA

Japanese Journal of Applied Physics   35 ( 9A )   L1104 - L1106   1996

Proposal and Analysis of a Three-Terminal Photon-Assisted Tunneling Device Operating in the Terahertz Frequency Range

MASAHIRO ASADA

IEICE Transaction on Electronics   E79-C ( 11 )   1537   1996

Room-Temperature Observation of Negative Differential Resistance in a Metal(CoSi2)/Insulator(CaF2)Quantum Interference Transistor Structure

MASAHIRO ASADA

Physica B   227 ( 1/4 )   213 - 215   1996

Proposal and Analysis of Very Short Channel Field Effect Transistor Using Vertical Tunneling with New Heterostructures on Silicon

MASAHIRO ASADA

Japanese Journal of Applied Physics   35 ( 9A )   L1104 - L1106   1996

Proposal and Analysis of a Three-Terminal Photon-Assisted Tunneling Device Operating in the Terahertz Frequency Range

MASAHIRO ASADA

IEICE Transaction on Electronics   E79-C ( 11 )   1537   1996

Transfer efficiency of hot electrons in a metal(CoSi2)/insulator(CaF2) quantum interference transistor

T Suemasu, W Saitoh, Y Khono, K Mori, M Watanabe, M Asada

SURFACE SCIENCE   361 ( 1-3 )   209 - 212   1996

THEORETICAL AND MEASURED CHARACTERISTICS OF METAL(COSI2)-INSULATOR(CAF2) RESONANT-TUNNELING TRANSISTORS AND THE INFLUENCE OF PARASITIC ELEMENTS

T SUEMASU, Y KOHNO, W SAITOH, M WATANABE, M ASADA

IEEE TRANSACTIONS ON ELECTRON DEVICES   42 ( 12 )   2203 - 2210   1995.12

EPITAXIAL-GROWTH OF A METAL(COSI2) INSULATOR(CAF2) NANOMETER-THICK HETEROSTRUCTURE AND ITS APPLICATION TO QUANTUM-EFFECT DEVICES

M ASADA, M WATANABE, T SUEMASU, Y KOHNO, W SAITOH

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS   13 ( 3 )   623 - 628   1995.5

Multiple Negative Differential Resistance Due to Quantum Interference of Hot Electron Waves in Metal(CoSi2)/Insulator(CaF2) Heterostructures and Influence of Parasitic Elements

MASAHIRO ASADA

Japanese Journal of Applied Physics   34 ( 8B )   4481 - 4484   1995

Multiple Negative Differential Resistance Due to Quantum Interference of Hot Electron Waves in Metal(CoSi2)/Insulator(CaF2) Heterostructures and Influence of Parasitic Elements

MASAHIRO ASADA

Japanese Journal of Applied Physics   34 ( 8B )   4481 - 4484   1995

DIFFERENT CHARACTERISTICS OF METAL (COSI2) INSULATOR (CAF2) RESONANT-TUNNELING TRANSISTORS DEPENDING ON BASE QUANTUM-WELL LAYER

T SUEMASU, Y KOHNO, N SUZUKI, M WATANABE, M ASADA

IEICE TRANSACTIONS ON ELECTRONICS   E77C ( 9 )   1450 - 1454   1994.9

Quantum interference of electron wave in metal (CoSi2) /insulator (CaF2) resonant tunneling hot electron transistor structure

T.Suemasu, Y.Kohno, W.Saitoh, N.Suzuki M.Watanabe M.Asada

Japan. J. Appl. Phys.   33 ( 12B )   L1762 - L1765   1994

Lasing Action of GaInAs/GaInAsP/InP Tensile-Strained Quartum-Box Laser

H.Hirayama, M.Asada, Y.Suematsu

Electronics Letters   30 ( 2 )   142 - 143   1994

Quantum interference of electron wave in metal (CoSi2) /insulator (CaF2) resonant tunneling hot electron transistor structure

T.Suemasu, Y.Kohno, W.Saitoh, N.Suzuki M.Watanabe M.Asada

Japan. J. Appl. Phys.   33 ( 12B )   L1762 - L1765   1994

Metal(CoSi2)/Insulator(CaF2) resonant tunneling diode

Takashi Suemasu, Masahiro Watanabe, Jun Suzuki, Yoshifumi Kohno, Masahiro Asada, Nobuhiro Suzuki

Japanese Journal of Applied Physics   33 ( 1R )   57 - 65   1994

Metal/insulator heterostructure electron devices

WATANABE Masahiro, SUEMASU Takashi, ASADA Masahiro

OYOBUTURI   63 ( 2 )   124 - 131   1994

Metal/Insulator Heterostructure Electron Devices

MASAHIRO ASADA

Monthly Publication of Japan. Soc. Appl. Phys.   63 ( 2 )   124 - 131   1994

Lasing Action of GaInAs/GaInAsP/InP Tensile-Strained Quartum-Box Laser

H.Hirayama, M.Asada, Y.Suematsu

Electronics Letters   30 ( 2 )   142 - 143   1994

ROOM-TEMPERATURE OPERATION OF GAINAS/GAINASP/INP SCH LASERS WITH QUANTUM-WIRE SIZE ACTIVE-REGION

Y MIYAKE, H HIRAYAMA, K KUDO, S TAMURA, S ARAI, M ASADA, Y MIYAMOTO, Y SUEMATSU

IEEE JOURNAL OF QUANTUM ELECTRONICS   29 ( 6 )   2123 - 2133   1993.6

Reflection High-Energy Electron Diffraction Oscillation during CaF2 growth on Si(111) by Partially Ionized Beam Epitaxy

M.Watanabe, N.Suzuki, M.Asada

Japan. J. Appl. Phys   32 ( 2 )   940 - 941   1993

Negative Differential Resistance of Metal (CoSi2)/Insulator (CaF2) Triple-Barrier Resonant Tunneling Diode

M.Watanabe, T.Suemasu, S.Muratake, M.Asada

Appl. Phys. Lett   62 ( 3 )   300 - 302   1993

Reflection High-Energy Electron Diffraction Oscillation during CaF2 growth on Si(111) by Partially Ionized Beam Epitaxy

M.Watanabe, N.Suzuki, M.Asada

Japan. J. Appl. Phys   32 ( 2 )   940 - 941   1993

Negative Differential Resistance of Metal (CoSi2)/Insulator (CaF2) Triple-Barrier Resonant Tunneling Diode

M.Watanabe, T.Suemasu, S.Muratake, M.Asada

Appl. Phys. Lett   62 ( 3 )   300 - 302   1993

Band gap shrinkage in GaInAs/GaInAsP/InP mult-Iquantum well lasers

MASAHIRO ASADA

Journal of Applied Physics   72   1   1992

Advantage of Sttained Quantum Wire Lasers

MASAHIRO ASADA

Japanese Journal of Applied Physics   31   2A   1992

Advantage of Sttained Quantum Wire Lasers

MASAHIRO ASADA

Japanese Journal of Applied Physics   31   2A   1992

Analysis of Current Injection Efficiency of Separate-Confinement-Heterostructure Quantum-Film Lasers

MASAHIRO ASADA

IEEE Journal of Quantum Electronics   28   1   1992

Band gap shrinkage in GaInAs/GaInAsP/InP mult-Iquantum well lasers

MASAHIRO ASADA

Journal of Applied Physics   72   1   1992

Room temperature negative differential resistance of metal (CoSi┣D22┫D2)/insulator(CaF┣D22┫D2) resonant tunneling diode

MASAHIRO ASADA

Electronics Letters   28   15   1992

Transistor action of metal(CoSi┣D22┫D2)/insulator(CaF┣D22┫D2) hot electron transistor structure

MASAHIRO ASADA

Electronics Letters   28   11   1992

Epitaxial Growth and Electrical Conductance of Metal(CoSi┣D22┫D2)/Insulator (CaF┣D22┫D2) Nanometer-Thick Layered Structures on Si(111)

MASAHIRO ASADA

Journal of Electronic Materials   21   8   1992

Eptaxial Growth of Metal (CoSi┣D22┫D2)/Insulator (CaF┣D22┫D2) Nanometer-Thick Layered Structure on Si(111)

MASAHIRO ASADA

Japanese Journal of Applied Physics   31   2A   1992

Analysis of Current Injection Efficiency of Separate-Confinement-Heterostructure Quantum-Film Lasers

MASAHIRO ASADA

IEEE Journal of Quantum Electronics   28   1   1992

Eptaxial Growth of Metal (CoSi┣D22┫D2)/Insulator (CaF┣D22┫D2) Nanometer-Thick Layered Structure on Si(111)

MASAHIRO ASADA

Japanese Journal of Applied Physics   31   2A   1992

Room temperature negative differential resistance of metal (CoSi┣D22┫D2)/insulator(CaF┣D22┫D2) resonant tunneling diode

MASAHIRO ASADA

Electronics Letters   28   15   1992

Transistor action of metal(CoSi┣D22┫D2)/insulator(CaF┣D22┫D2) hot electron transistor structure

MASAHIRO ASADA

Electronics Letters   28   11   1992

Epitaxial Growth and Electrical Conductance of Metal(CoSi┣D22┫D2)/Insulator (CaF┣D22┫D2) Nanometer-Thick Layered Structures on Si(111)

MASAHIRO ASADA

Journal of Electronic Materials   21   8   1992

Optical Switch using semiconductor quantum well structures

MASAHIRO ASADA

Nonlinear Optics   1   1   1991

Proposal and analysis of quantum-interference high-speed electron devices using metal-insulator heterostructure

MASAHIRO ASADA

Transactin of IEICE of Japan   E74   10   1991

Analysis of electric field effect in quantum box structure and its application to low-loss intersectional type optical switch

MASAHIRO ASADA

IEEE Journal of Lightwave Technology   9   10   1991

Optical Switch using semiconductor quantum well structures

MASAHIRO ASADA

Nonlinear Optics   1   1   1991

Analysis of electric field effect in quantum box structure and its application to low-loss intersectional type optical switch

MASAHIRO ASADA

IEEE Journal of Lightwave Technology   9   10   1991

Proposal and analysis of quantum-interference high-speed electron devices using metal-insulator heterostructure

MASAHIRO ASADA

Transactin of IEICE of Japan   E74   10   1991

光生成キャリア変調による光信号のテラヘルツ・サブテラヘルツ信号への直接変換

第69回応用物理学会学術講演会  2008 

光励起自由キャリアを用いた1.55μm光信号からサブTHz信号への直接変換

2008 

光生成キャリア変調による光信号からサブテラヘルツ信号への直接変換速度特性

第56回春季応用物理学会学術講演会  2009 

Direct Modulation of Sub-Teraherz Waves by 1.55-μm Optical Signal

iNOW2008  2008 

Direct Conversion from Optical Signal to THz and Sub-THz Signals by Photogenerated Carrier Modulation

2008 

テラヘルツ信号の光生成キャリアによる光信号からの直接変換

電子デバイス研究会  2008 

Mid-infrared (～4μm) Electroluminescence from CdF2/CaF2 Intersubband transition structures grown on Si(111) substrate

15th International Conference on Nonequilibrium carrier Dynamics in Semiconductors (HCIS15), MoP-31  2007 

Transmission Electron Microscopy Analysis of CaF2/CdF2/CaF2 Resonant Tunneling Diode Structures grown on Si(100) Substrate

The 34th International Symposium on Compound Semiconductors (ISCS2007), TuD P8  2007 

Ichimura Award

2005  

JJAP論文賞

2003  

金属-絶縁体ヘテロ接合電子デバイスの研究