Organization
Institute of Integrated Research MDX Research Center for Element Strategy Visiting Associate Professor
Title
Visiting Associate Professor
External link
KIM JUNGHWAN
News & Topics
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Making Metal–Halide Perovskites Useful in Planar Devices Through a New Hybrid Structure
2022/02/04
Languages： English
Two of the main drawbacks of using tin (Sn)-based metal halide perovskites (MHPs) in thin-film transistors have been simultaneously solved by an inno
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IGZO-TFTに続く、薄膜トランジスタ技術の革新機軸の提案 低環境負荷pチャンネルTFTの高性能化・低コスト化を実現
2022/01/31
Languages： Japanese
要点-「一長一短」の物質同士の長所を活かすアイデアで、TFT特性を大きく改善-有害元素フリーのハロゲン化物の溶液から高性能pチャンネルTFTを実現-従来のIGZO-TFTと組みわせた高性能CMOSとして機能することを実証概要東京工業大学元素戦略研究センターの金正煥（JunghwanKim、キム・ジョ
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Fabricating Stable, High-mobility Transistors for Next-generation Display Technologies
2021/12/16
Languages： English
The trade-off between carrier mobility and stability in amorphous oxide semiconductor-based thin film transistors (TFTs) has been finally overcome by
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低温ポリシリコン（LTPS）に匹敵する高性能で安定なアモルファス酸化物薄膜トランジスタ（TFT）を実現
2021/12/10
Languages： Japanese
要点-高移動度の酸化物TFTで不安定性が生じるメカニズムを解明。-LTPSに匹敵する高い移動度と実用レベルの安定性を両立した酸化物TFTを実現。-均質な薄膜を容易に作製でき、レーザー照射も不要である点がLTPSよりも圧倒的に有利。概要東京工業大学元素戦略研究センターの金正煥（JunghwanKim、
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Shedding Light on the Development of Efficient Blue-Emitting Semiconductors
2020/09/17
Languages： English
Scientists at Tokyo Institute of Technology (Tokyo Tech) have discovered a new alkali copper halide, Cs5Cu3Cl6I2, that emits pure blue light. The combination of the two halide ions, chloride and i
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発光効率と大気安定性が高い、有害元素フリーの新規青色発光体を実現
2020/09/16
Languages： Japanese
要点-発光効率95%の青色発光体を開発。-大気中で高い安定性があり、鉛やカドミウムなど有害元素を含まない。-室温で溶液から合成可能で、フレキシブルディスプレイなどへの応用を期待。概要東京工業大学元素戦略研究センターの李江伟（Jiangwei
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New design strategy brightens up the future of perovskite-based light-emitting diodes
2019/08/08
Languages： English
Scientists at Tokyo Institute of Technology discover a new strategy to design incredibly efficient perovskite-based LEDs with record-setting brightness by leveraging the quantum confinement effect.
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2019/07/31
Languages： Japanese
高性能ペロブスカイトLED実現に向けた新概念を提案 新アモルファス酸化物半導体で、励起子をペロブスカイト層内に閉じ込める 5 Vで500,000 cd/m2の緑色発光素子を実現
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Lighting it up: A new non-toxic, cheap, and stable blue photoluminescent material
2018/09/20
Languages： English
Scientists at Tokyo Tech have designed a novel photoluminescent material that is cheap to fabricate, does not use toxic starting materials, and is very stable, enhancing our understanding of the quantic nature of photoluminescence.
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有害元素フリーの高効率青色発光体を実現 LEDをマイルドな製造環境で作製可能に
2018/09/20
Languages： Japanese
蛍光量子効率90%の青色蛍光体を開発 有害元素を含まず室温で溶液から合成可能 電子注入層、正孔注入層の組み合わせでLEDの作製可能
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2018/02/16
Languages： Japanese
室温かつ溶液コーティングで製膜できる透明p型アモルファス半導体を実現 正孔の移動度はn型透明アモルファス半導体IGZOに匹敵 大きな移動度を持つアモルファスp型半導体の設計指針を提示
Education
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Tokyo Institute of Technology
2014.4 - 2016.3
Country： Japan
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Tokyo Institute of Technology
2012.10 - 2014.3
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Ajou University Department of Electrical and Computer Engineering
2005.3 - 2012.9
Country： Korea, Republic of
Research History
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POSTECH CHEMICAL ENGINEERING Adjunct Professor
2021.12
Country：Korea, Republic of
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JST PRESTO Researcher
2021.10
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Tokyo Institute of Technology Materials Research Center for Element Strategy Assistant Professor
2016.4
Country：Japan
Papers
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Electronic Promotion of Methanol Synthesis over Cu-Loaded ZnO-Based Catalysts
Hironobu Sugiyama, Nobuhiro Nakamura, Satoru Watanabe, Junghwan Kim, Masaaki Kitano, Hideo Hosono
The Journal of Physical Chemistry Letters 14 ( 5 ) 1259 - 1264 2023.1
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Extremely Shallow Valence Band in Lanthanum Trihydride
Tomoyuki Yamasaki, Soshi Iimura, Junghwan Kim, Hideo Hosono
Journal of the American Chemical Society 2022.12
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Low-temperature-processable amorphous-oxide-semiconductor-based phosphors for durable light-emitting diodes Reviewed
Keisuke Ide, Naoto Watanabe, Takayoshi Katase, Masato Sasase, Junghwan Kim, Shigenori Ueda, Koji Horiba, Hiroshi Kumigashira, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya
Applied Physics Letters 121 ( 19 ) 2022.11
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Hole Concentration Reduction in CuI by Zn Substitution and its Mechanism: Toward Device Applications
Masatake Tsuji, Soshi Iimura, Junghwan Kim, Hideo Hosono
ACS Applied Materials & Interfaces 2022.7
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Kihyung Sim, Takuya Nakao, Masato Sasase, Soshi Iimura, Junghwan Kim, Hideo Hosono
Small 2202298 - 2202298 2022.7
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Characteristic Resistive Switching of Rare-Earth Oxyhydrides by Hydride Ion Insertion and Extraction
Tomoyuki Yamasaki, Ryosei Takaoka, Soshi Iimura, Junghwan Kim, Hidenori Hiramatsu, Hideo Hosono
ACS Applied Materials & Interfaces 2022.5
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High‐Performance P‐Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D–3D Core–Shell Structure
Junghwan Kim, Yu‐Shien Shiah, Kihyung Sim, Soshi Iimura, Katsumi Abe, Masatake Tsuji, Masato Sasase, Hideo Hosono
Advanced Science 9 ( 5 ) 2104993 - 2104993 2022.2
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Mobility–stability trade-off in oxide thin-film transistors
Yu-Shien Shiah, Kihyung Sim, Yuhao Shi, Katsumi Abe, Shigenori Ueda, Masato Sasase, Junghwan Kim, Hideo Hosono
Nature Electronics 2021.11
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Unintended Carbon-Related Impurity and Negative Bias Instability in High-Mobility Oxide TFTs
Yu-Shien Shiah, Kihyung Sim, Shigenori Ueda, Junghwan Kim, Hideo Hosono
IEEE Electron Device Letters 42 ( 9 ) 1319 - 1322 2021.9
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Highly Dense and Stable p-Type Thin-Film Transistor Based on Atomic Layer Deposition SnO Fabricated by Two-Step Crystallization
Hye-Mi Kim, Su-Hwan Choi, Hyun Jun Jeong, Jung-Hoon Lee, Junghwan Kim, Jin-Seong Park
ACS Applied Materials & Interfaces 2021.7
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High-Performance Indium Gallium Tin Oxide Transistors with an Al2O3 Gate Insulator Deposited by Atomic Layer Deposition at a Low Temperature of 150 °C: Roles of Hydrogen and Excess Oxygen in the Al2O3 Dielectric Film
Cheol Hee Choi, Taikyu Kim, Shigenori Ueda, Yu-Shien Shiah, Hideo Hosono, Junghwan Kim, Jae Kyeong Jeong
ACS Applied Materials & Interfaces 2021.6
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Origins of the coloration from structure and valence state of bismuth oxide glasses
Akira Saitoh, Katsuki Hayashi, Kota Hanzawa, Shigenori Ueda, Shiro Kawachi, Jun ichi Yamaura, Keisuke Ide, Junghwan Kim, Grégory Tricot, Satoru Matsuishi, Kazuki Mitsui, Tatsuki Shimizu, Masami Mori, Hideo Hosono, Hidenori Hiramatsu
Journal of Non-Crystalline Solids 560 2021.5
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Origin of Metallic Nature of Na3N
Hiroshi Mizoguchi, Sang-Won Park, Takayoshi Katase, Grigori V. Vazhenin, Junghwan Kim, Hideo Hosono
Journal of the American Chemical Society 143 ( 1 ) 69 - 72 2021.1
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A Highly Efficient and Stable Blue‐Emitting Cs 5 Cu 3 Cl 6 I 2 with a 1D Chain Structure
Jiangwei Li, Takeshi Inoshita, Tianping Ying, Atsushi Ooishi, Junghwan Kim, Hideo Hosono
Advanced Materials 32 ( 37 ) 2002945 - 2002945 2020.9
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Improved polaronic transport under a strong Mott–Hubbard interaction in Cu-substituted NiO
Seong Gon Park, Kyu Hyoung Lee, Jae-Hoon Lee, Geukchan Bang, Junghwan Kim, Hee Jung Park, Min Suk Oh, Suyoun Lee, Young-Hoon Kim, Young-Min Kim, Hideo Hosono, Joonho Bang, Kimoon Lee
Inorganic Chemistry Frontiers 2020
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Taehwan Jun, Taketo Handa, Kihyung Sim, Soshi Iimura, Masato Sasase, Junghwan Kim, Yoshihiko Kanemitsu, Hideo Hosono
APL Materials 7 ( 11 ) 111113 - 111113 2019.11
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Performance boosting strategy for perovskite light-emitting diodes
Kihyung Sim, Taehwan Jun, Joonho Bang, Hayato Kamioka, Junghwan Kim, Hidenori Hiramatsu, Hideo Hosono
Applied Physics Reviews 6 ( 3 ) 031402 - 031402 2019.9
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Zeolitic Intermetallics: LnNiSi (Ln = La–Nd)
Hiroshi Mizoguchi, Sang-Won Park, Kazuhisa Kishida, Masaaki Kitano, Junghwan Kim, Masato Sasase, Takashi Honda, Kazutaka Ikeda, Toshiya Otomo, Hideo Hosono
Journal of the American Chemical Society 141 ( 8 ) 3376 - 3379 2019.2
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Ultra-wide bandgap amorphous oxide semiconductors for NBIS-free thin-film transistors
Junghwan Kim, Joonho Bang, Nobuhiro Nakamura, Hideo Hosono
APL Materials 2019.2
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Significance of energy-level alignment in 3D perovskite ELs
Kihyung Sim, Hayato Kamioka, Junghwan Kim, Hideo Hosono
Proceedings of the International Display Workshops 2 847 - 849 2019
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Pb-free blue-emitting 0D Cs3Cu2l5 with high PLQY of ~90%
Taehwan Jun, Kihyung Sim, Soshi Limura, Masato Sasase, Hayato Kamioka, Junghwan Kim, Hideo Hosono
Digest of Technical Papers - SID International Symposium 50 ( 2 ) 1176 - 1178 2019
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Electron Affinity Control of Amorphous Oxide Semiconductors and Its Applicability to Organic Electronics
Junghwan Kim, Koji Yamamoto, Soshi Iimura, Shigenori Ueda, Hideo Hosono
Advanced Materials Interfaces 1801307 - 1801307 2018.12
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Lead-Free Highly Efficient Blue-Emitting Cs3 Cu2 I5 with 0D Electronic Structure
Taehwan Jun, Kihyung Sim, Soshi Iimura, Masato Sasase, Hayato Kamioka, Junghwan Kim, Hideo Hosono
Advanced Materials 30 ( 43 ) 1804547 - 1804547 2018.10
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Solution-Processable P-type Transparent Amorphous Semiconductor for Flexible Electronics
Taehwan Jun, Kota Aoyama, Joonho Bang, Junghwan Kim, Hideo Hosono
AM-FPD 2018 - 25th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings 2018.8
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Transition Metal-Doped Amorphous Oxide Semiconductor Thin-Film Phosphor, Chromium-Doped Amorphous Gallium Oxide
Keisuke Ide, Yuki Futakado, Naoto Watanabe, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya
physica status solidi (a) 216 ( 5 ) 1800198 - 1800198 2018.8
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(Invited) Development of Ultra-Wide Bandgap Amorphous Oxide Semiconductors for Future Electronics
Junghwan Kim, Hideo Hosono
ECS Meeting Abstracts 2018.7
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Material Design of p‐Type Transparent Amorphous Semiconductor, Cu–Sn–I
Taehwan Jun, Junghwan Kim, Masato Sasase, Hideo Hosono
Advanced Materials 30 ( 12 ) 1706573 - 1706573 2018.3
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Surface tailoring of newly developed amorphous Zn Si O thin films as electron injection/transport layer by plasma treatment: Application to inverted OLEDs and hybrid solar cells
Hongsheng Yang, Junghwan Kim, Koji Yamamoto, Xing Xing, Hideo Hosono
Applied Surface Science 434 995 - 1000 2018.3
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Multiple Color Inorganic Thin-Film Phosphor, RE-Doped Amorphous Gallium Oxide (RE = Rare Earth: Pr, Sm, Tb, and Dy), Deposited at Room Temperature
Naoto Watanabe, Keisuke Ide, Junghwan Kim, Takayoshi Katase, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya
physica status solidi (a) 216 ( 5 ) 1700833 - 1700833 2018.1
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Identifying quasi-2D and 1D electrides in yttrium and scandium chlorides via geometrical identification
Biao Wan, Yangfan Lu, Zewen Xiao, Yoshinori Muraba, Junghwan Kim, Dajian Huang, Lailei Wu, Huiyang Gou, Jingwu Zhang, Faming Gao, Ho-kwang Mao, Hideo Hosono
npj Computational Materials 4 ( 1 ) 2018
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Development of P-type transparent amorphous semiconductor
Junghwan Kim, Taehwan Jun, Joonho Bang, Kota Aoyama, Hideo Hosono
Proceedings of the International Display Workshops 1 261 - 263 2018
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Organic light-emitting diode lighting with high out-coupling and reliability: Application of transparent amorphous ZnO–SiO2 semiconductor thick film
Nobuhiro Nakamura, Junghwan Kim, Koji Yamamoto, Satoru Watanabe, Hideo Hosono
Organic Electronics 51 103 - 110 2017.12
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Chemical Design and Example of Transparent Bipolar Semiconductors
Takeshi Arai, Soshi Iimura, Junghwan Kim, Yoshitake Toda, Shigenori Ueda, Hideo Hosono
Journal of the American Chemical Society 2017.11
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Exploration of Stable Strontium Phosphide-Based Electrides: Theoretical Structure Prediction and Experimental Validation
Junjie Wang, Kota Hanzawa, Hidenori Hiramatsu, Junghwan Kim, Naoto Umezawa, Koki Iwanaka, Tomofumi Tada, Hideo Hosono
Journal of the American Chemical Society 139 ( 44 ) 15668 - 15680 2017.10
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Material design of ultra-wide bandgap AOSs and their applications in photostable electronic devices
Junghwan Kim, Nobuhiro Nakamura, Toshio Kamiya, Hideo Hosono
AM-FPD 2017 - 24th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings 299 - 301 2017.8
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P-234: Late-News Poster: OLED Lighting with High Out-Coupling Efficiency and Reliability
Nobuhiro Nakamura, Junghwan Kim, Koji Yamamoto, Satoru Watanabe, Naomichi Miyakawa, Toshio Kamiya, Hideo Hosono
SID Symposium Digest of Technical Papers 48 ( 1 ) 2035 - 2038 2017.5
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P-186: Realization of Low-Voltage Drop across Charge Generation Layer using Bi-layer Oxide Semiconductors for Tandem OLEDs
Hongsheng Yang, Junghwan Kim, Hideo Hosono
SID Symposium Digest of Technical Papers 48 ( 1 ) 1971 - 1973 2017.5
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P-187: Electronic Structures of Various Color Light-Emitting Amorphous Oxide Semiconductor Thin Films
Naoto Watanabe, Junghwan Kim, Keisuke Ide, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya
SID Symposium Digest of Technical Papers 48 ( 1 ) 1974 - 1976 2017.5
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Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor
Junghwan Kim, Takumi Sekiya, Norihiko Miyokawa, Naoto Watanabe, Koji Kimoto, Keisuke Ide, Yoshitake Toda, Shigenori Ueda, Naoki Ohashi, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya
NPG Asia Materials 9 ( 3 ) e359 - e359 2017.3
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Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs
Hideo Hosono, Junghwan Kim, Yoshitake Toda, Toshio Kamiya, Satoru Watanabe
Proceedings of the National Academy of Sciences 114 ( 2 ) 233 - 238 2017.1
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Erratum - Publisher’s note: Amorphous gallium oxide as an improved host for inorganic light-emitting thin film semiconductor fabricated at room temperature on glass (ECS J. Solid State Sci. Technol. (2017) 6 (P410) DOI: 10.1149/2.0181707jss) Reviewed
Naoto Watanabe, Junghwan Kim, Keisuke Ide, Hidenori Hiramatsu, Hiroshi Kumigashira, Shigenori Ueda, Hideo Hosono, Toshio Kamiya
ECS Journal of Solid State Science and Technology 6 ( 8 ) X1 2017
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Watanabe, N., Kim, J., Ide, K., Hiramatsu, H., Kumigashira, H., Ueda, S., Hosono, H., Kamiya, T.
ECS Journal of Solid State Science and Technology 6 ( 7 ) 2017
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Yang, H., Kim, J., Yamamoto, K., Hosono, H.
Organic Electronics: physics, materials, applications 46 2017
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Material Design of Transparent Oxide Semiconductors for Organic Electronics: Why Do Zinc Silicate Thin Films Have Exceptional Properties?
Nobuhiro Nakamura, Junghwan Kim, Hideo Hosono
Advanced Electronic Materials 4 ( 2 ) 1700352 - 1700352 2017
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ZnO thin-film transistor grown by RF sputtering using Zn metal target and oxidizer pulsing
Yoo, D., Jeon, W., Kim, J., Meng, J., Yang, Y., Jo, J.
Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan 125 ( 3 ) 112 - 117 2017
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Novel transparent oxide semiconductor, zinc silicates, for electron injection/transport layers in OLEDs
Hideo Hosono, Nobuyasu Nakamura, Hongsheng Yang, Junghwan Kim
Proceedings of the International Display Workshops 1 685 - 689 2017
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Ultrawide band gap amorphous oxide semiconductor, Ga–Zn–O
Junghwan Kim, Norihiko Miyokawa, Takumi Sekiya, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya
Thin Solid Films 614 84 - 89 2016.9
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69-4: NBIS-Stable Oxide Thin-Film Transistors Using Ultra-Wide Bandgap Amorphous Oxide Semiconductors
Junghwan Kim, Nobuhiro Nakamura, Toshio Kamiya, Hideo Hosono
SID Symposium Digest of Technical Papers 47 ( 1 ) 951 - 953 2016.5
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31-4: Novel Inorganic Electron Injection and Transport Materials Enabling Large-Sized Inverted OLEDs Driven by Oxide TFTs
Hideo Hosono, Junghwan Kim, Toshio Kamiya, Nobuhiro Nakamura, Satoru Watanabe
SID Symposium Digest of Technical Papers 47 ( 1 ) 401 - 404 2016.5
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Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor
Junghwan Kim, Norihiko Miyokawa, Keisuke Ide, Yoshitake Toda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya
AIP Advances 6 ( 1 ) 015106 - 015106 2016.1
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Transparent amorphous oxide semiconductor thin film phosphor, In-Mg-O:Eu
Kim, J., Miyokawa, N., Ide, K., Hiramatsu, H., Hosono, H., Kamiya, T.
Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan 124 ( 5 ) 532 - 535 2016
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Importance of oxygen- and hydrogen-related defects to develop new amorphous oxide semiconductor materials
Toshio Kamiya, Junghwan Kim, Keisuke Ide, Hideya Kumomi, Hideo Hosono
23rd International Display Workshops in conjunction with Asia Display, IDW/AD 2016 2 759 - 762 2016
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Deposition and structuring processes of a newly developed transparent amorphous oxide semiconductor for the electron transport and injection layers of AM-OLEDs
Nobuhiro Nakamura, Toshinari Watanabe, Junghwan Kim, Satoru Watanabe, Eiji Matsuzakl, Yoshitake Toda, Naomichi Miyakawa, Satoru Fujitsu, Hideo Hosono
Digest of Technical Papers - SID International Symposium 46 ( 3 ) 1710 - 1713 2015.6
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P-177L:Late-News Poster: Highly Efficient Inverted OLEDs using A New Transparent Amorphous Oxide Semiconductor
Junghwan Kim, Satoru Watanabe, Eiji Matsuzaki, Nobuhiro Nakamura, Naomichi Miyakawa, Yoshitake Toda, Toshio Kamiya, Hideo Hosono
SID Symposium Digest of Technical Papers 46 ( 1 ) 1714 - 1716 2015.6
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Fabrication and opto-electrical properties of amorphous (Zn,B)O thin film by pulsed laser deposition
Tang, H.-C., Kim, J., Hiramatsu, H., Hosono, H., Kamiya, T.
Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan 123 ( 1439 ) 523 - 526 2015
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Kim, J., Hiramatsu, H., Hosono, H., Kamiya, T.
Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan 123 ( 1439 ) 2015
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ZnO thin-film transistor grown by rf sputtering using carbon dioxide and substrate bias modulation
Kim, J., Meng, J., Lee, D., Yu, M., Yoo, D., Kang, D.W., Jo, J.
Journal of Nanomaterials 2014 2014
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Kim, J., Hiramatsu, H., Hosono, H., Kamiya, T.
Thin Solid Films 559 2014
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Transparent amorphous oxide semiconductors for efficient and stable electron transport layers in organic LEDs and lightings
Hideo Hosono, Eiji Matsuzaki, Yoshitake Toda, Junghwan Kim, Toshio Kamiya, Satoru Watanabe, Nobuhiro Nakamura, Naomichi Miyakawa
21st International Display Workshops 2014, IDW 2014 1 649 - 650 2014
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P-type capacitance observed in nitrogen-doped ZnO
Yoo, H., Kim, S., Lee, D., Kim, J., Jo, J.
Transactions of the Korean Institute of Electrical Engineers 61 ( 6 ) 2012
Industrial property rights
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光電子素子、これを用いた平面ディスプレイ、及び光電子素子の製造方法
細野 秀雄, 金 正煥, 雲見 日出也
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半導体化合物、半導体化合物の層を有する半導体素子、積層体、およびターゲット
細野 秀雄, 金 正煥, 方 俊皓, 雲見 日出也, 渡邉 暁, 大越 雄斗, 宮川 直通, 石橋 奈央, 増茂 邦雄, 中村 伸宏
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化合物半導体の量子ドットを含む膜
細野 秀雄, 金 正煥, 中村 伸宏, 渡邉 暁, 宮川 直通
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有機EL素子
細野 秀雄, 金 正煥, 宮川 直通, 中村 伸宏, 渡邉 暁, 永井 直美, 苗 偉
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酸化物半導体化合物、酸化物半導体化合物の層を備える半導体素子、および積層体
細野 秀雄, 神谷 利夫, 雲見 日出也, 金 正煥, 中村 伸宏, 渡邉 暁, 宮川 直通
Research Projects
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ヨウ素アニオンの性質を生かした新機能の開拓
Grant number：JPMJPR21Q4 2021 - 2024
科学技術振興機構（JST） さきがけ
金 正煥
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ヨウ素アニオンの性質を生かした新機能の開拓
Grant number：21468568 2021 - 2023
科学技術振興機構 戦略的な研究開発の推進/戦略的創造研究推進事業/さきがけ
金 正煥
ヨウ素のような巨大アニオンの性質やそれに伴う電子物性を基礎とし、ハロゲン化物からの新たな機能開拓を図ります。特にこれまでに困難とされていた様々な機能の両立に着目し、発光材料での「輸送特性と発光特性の両立」、半導体での「キャリア制御と移動度の両立」などに挑戦します。研究手法としては、複合アニオンを用いた物質探索、低温溶液法を用いた準安定相の創製、複合相薄膜を用いた多機能化などを用います。
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Exploration of New Non-Toxic Metal Halides for Optoelectronic Applications
Grant number：19K15655 2019.4 - 2021.3
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Early-Career Scientists Grant-in-Aid for Early-Career Scientists
Kim Junghwan
Grant amount：\4160000 （ Direct Cost: \3200000 、 Indirect Cost：\960000 ）
In this study, new blue-emitting Pb-free Cs5Cu3I6Cl2 was successfully developed. Very high PQLY of 95% and satisfactory air-stability were confirmed. On the other hand, it was clarified that both charge transportability and PQLY were equally important to achieve high performance PeLEDs. To achieve this purpose, novel method of utilizing charge transport layers to strongly confine exciton in emission layer was proposed. As a result, high performance PeLEDs were successfully developed. Low driving voltage: 10,000 cd/m2 at 2.9V, maxim luminance: 500,000 cd/m2.
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New evolution of materials concept and application of electrides
Grant number：17H06153 2017.5 - 2022.3
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (S) Grant-in-Aid for Scientific Research (S)
Hosono Hideo
Grant amount：\174980000 （ Direct Cost: \134600000 、 Indirect Cost：\40380000 ）
We have extended the material concept of electrides (electrides), explored new properties, and applied them to new applications. The concept of electrides, which had been limited to materials based on bulk electron-deficient ionic crystals, was successfully extended to surfaces, neutral and electron-rich types, and intermetallic compounds. In terms of new properties, we discovered that 1D electrides are Mott-type insulators, 2D electrides can be a platform for topological materials, ferromagnetism mediated by anion electrons in rare-earth carbide electrides, and electrides that are stable even in water. In the application, we found that amorphous electride thin films are excellent as electron injection layer materials for OLEDs due to their low work function and high transparency, and that cobalt-based intermetallic compound electrides and surface electrides, nickel-supported cerium nitrides, show high activity as ammonia synthesis catalysts without ruthenium.
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Development of ultra-wide bandgap amorphous oxide semiconductors for photo-stable electronic devices
Grant number：17K14548 2017.4 - 2019.3
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Young Scientists (B) Grant-in-Aid for Young Scientists (B)
Kim Junghwan
Grant amount：\4420000 （ Direct Cost: \3400000 、 Indirect Cost：\1020000 ）
The transparency of oxide semiconductors is a significant feature that enables the fabrication of fully transparent electronics. Unfortunately, practical transparent electronics using amorphous oxide semiconductors (AOSs) have not yet been realized, owing to significant photo-instabilities of these materials. In this work, we examined the electronic structures of a variety of AOSs and found that their ionization potentials vary greatly, depending upon the specific metal cations. This finding enabled us to increase the optical bandgap by modifying the VBM levels, resulting in a high mobility of 9 cm2/Vs and an ultra-wide bandgap of 3.8 eV for amorphous Zn-Ga-O (a-ZGO).
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Area Cultivation of Amorphous Electrides
Grant number：17H01228 2017.4 - 2018.3
Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A) Grant-in-Aid for Scientific Research (A)
Grant amount：\43160000 （ Direct Cost: \33200000 、 Indirect Cost：\9960000 ）
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アモルファス酸化物半導体を母体とした蛍光体薄膜の開発及び新規発光素子への応用
Grant number：16H06795 2016.8 - 2018.3
日本学術振興会 科学研究費助成事業 研究活動スタート支援 研究活動スタート支援
金 正煥
Grant amount：\2990000 （ Direct Cost: \2300000 、 Indirect Cost：\690000 ）
本研究はアモルファス酸化物半導体（AOS）を母体とした蛍光体薄膜を開発し、それを用いた新規発光素子の創造を目的とした。先行研究では、従来のAOSであるIGZOを母体とし、希土類元素を添加することで、室温作製の可能な発光薄膜ができることがわかっていた。しかし、実用に向けて発光効率の面で改善が必要とされていたため、本研究の平成28年度の目的として「様々なAOS の母体と
発光中心を探索し、それらの発光特性および物性を観察する。」また「AOS 母体および発光中心のエネルギー準位と発光特性との相関を明らかにする。」と計画した。
平成28年度は、上述のようにAOS母体と発光中心の探索を主に行うことから、IGZOより優れた母体の開発に成功した。アモルファス酸化ガリウム（a-GO)は報告者が、近年、半導体化に成功した材料であり、蛍光体薄膜の母体として非常に有望であることを見出した。また、a-GOを用いた蛍光体薄膜はIGZOより内部量子効率が5倍以上改善されており、今後、発光素子としての応用が大きく期待される。一方で、報告者はa-GOの電子構造を解析することから、優れた発光効率の機構を明らかにすることができた。a-GOは4.0eVと非常に大きなバンドギャップを持っており、またドナー準位が深いことから、自由キャリア濃度が小さいことが明らかにされた。従って、自由キャリアによる非発光再結合が抑制されていることがわかった。その他、共鳴光電子分光を用いた希土類元素の４ｆ準位の位置を明確にすることができており、今後はこのエネルギー準位と発光効率の関連性を検討するつもりでいる。