Faculty Profiles - HOSHII TAKUYA

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HOSHII TAKUYA

Organization

School of Engineering Assistant Professor

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Research Interests

Semiconductor, Electrical device
Semiconductor device

Research Areas

Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electron device and electronic equipment

Education

The University of Tokyo School of Engineering Department of Electrical Engineering and Information Systems

2008.4 - 2011.3

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The University of Tokyo Graduate School of Frontier Sciences

2006.4 - 2008.3

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The University of Tokyo Faculty of Engineering Department of Electronic Engineering

2002.4 - 2006.3

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Research History

Institute of Science Tokyo School of Engineering Assistant Professor

2024.10

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Country：Japan

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Tokyo Institute of Technology School of Engineering Assistant Professor

2017.1 - 2024.9

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The University of Tokyo Research Center for Advanced Science and Technology Assistant Professor

2011.4 - 2016.12

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Committee Memberships

The Japan Society of Applied Physics SSDM Steering Committee

2025

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Committee type：Academic society

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The Japan Society of Applied Physics SSDM Program Committee (Area6)

2015.1

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Committee type：Academic society

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公益社団法人応用物理学会分科会日本光学会光学シンポジウム実行委員

2012.9 - 2014.7

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Committee type：Academic society

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Papers

Interpretation of ferroelectric behavior in AlScN films with TiN and Ta bottom electrodes

Ting-Tzu Kuo, Ting-Mao Feng, Si-Meng Chen, Hitomi Hasegawa, Jia-Hong Lin, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Ying-Chung Chen, Ting-Chang Chang, Kuniyuki Kakushima

Applied Physics Letters 2026.3

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Publishing type：Research paper (scientific journal)

DOI： 10.1063/5.0312701

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Interface properties of SiC MOS devices with NH₃ plasma nitridation of ultrathin SiO₂ interfacial layer Reviewed

An Li, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Kuniyuki Kakushima

Japanese Journal of Applied Physics 64 ( 3 ) 030901 - 030901 2025.3

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Language：English Publishing type：Research paper (scientific journal) Publisher：IOP Publishing

Abstract

The effect of NH₃ remote-plasma treatment on 4H-SiC surfaces on the interface properties is investigated. By comparing with the N₂ plasma treatment, the NH₃ plasma treatment showed a reduction in interface state density (D_it) down to 3.0 × 10¹¹cm⁻²eV⁻¹, with better bias stress stability. The improvement was further enhanced to 1.4 × 10¹¹cm⁻²eV⁻¹ when the plasma treatment was conducted to the 4H-SiC surface with a 0.4-nm-thick SiO₂ interfacial layer, presumably suppressing the plasma damage to the SiC surface. Mobility improvement from 22.8 to 27.1 cm²V⁻¹s⁻¹ was achieved without negatively shifting the threshold voltage while keeping a high breakdown field of over 10 MV cm⁻¹.

DOI： 10.35848/1347-4065/adb8b0

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Other Link： https://iopscience.iop.org/article/10.35848/1347-4065/adb8b0/pdf
Fabrication of n-type and p-type WSe₂ field-effect transistors and their low-voltage CMOS inverter operation Reviewed

Takamasa Kawanago, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi

Japanese Journal of Applied Physics 64 ( 2 ) 020803 - 020803 2025.2

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Language：English Publishing type：Research paper (scientific journal) Publisher：IOP Publishing

Abstract

This paper describes the concepts for achieving n-type and p-type WSe₂ field-effect transistors (FETs) and their complementary metal-oxide-semiconductor (CMOS) inverter operation. First, n-type and p-type WSe₂ FETs were demonstrated using molecular chemistry approaches that offer the manipulation of WSe₂ properties through low-temperature, low-energy processes. Next, the advancement in device technology was explained to achieve symmetric characteristics in n-type and p-type WSe₂ FETs. WSe₂ single-channel CMOS offers a promising pathway for simplifying device integration to suppress variability and fluctuations in FET characteristics, although many challenges remain to be addressed. Further fundamental research holds the potential to advance the development of WSe₂ single-channel CMOS devices.

DOI： 10.35848/1347-4065/adb43a

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(Invited) Influence of Target-Sample Distance on Residual Stress for Sputter-Deposited Ferroelectric AlScN Invited

Yukimura Tokita, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Kuniyuki Kakushima

ECS Meeting Abstracts MA2024-02 ( 20 ) 1814 - 1814 2024.11

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Language：English Publishing type：Research paper (international conference proceedings) Publisher：The Electrochemical Society

Ferroelectric Al_1-xSc _x N films have been extensively studied as a material for next-generation non-volatile ferroelectric memories. A high remnant polarization (P _r) of over 100 µC/cm² is attractive even under 10 nm thin films [1,2]. As the role of Sc atoms in the AlN crystal to apply tensile stress, the elongation in the lattice constant eases the displacement of N atoms by an electric field. Besides, one of the issues of ferroelectric AlScN films is the increase in E _C while thinning the thickness. The source of the change is explained by the stress applied from the bottom electrode. We have made a Raman spectroscopy study to measure the stress in AlScN films with different thicknesses, and find that higher compressive stress is presented for thinner film, especially for higher Sc composition films [3]. However, the physical source of the stress is yet to be known. In this presentation, a Raman spectroscopy measurement was conducted on AlScN films with different target-sample (T/S) distance, which can strongly affect the stress in the film, as reported in TiN case [4].

Al_0.7Sc_0.3N films were deposited on (0001) sapphier substrates by reactive sputtering process. Film thickness were varied from 5 to 50 nm to confirm the thickness dependence stress in the films. The T/S distance was set to 100, 130, and 150 mm.

Differetial Raman spectra obtained by subtracting the signal of sappire substrate is shown in fig. 1. We can confirm two broad and weak peaks indicated with doted line around 580 (E₂ ^H) and 850 /cm (A₁LO). The two Raman peaks show a slight blue shift with longer T/S distance. The obtained Raman shifts on thickness are summarized in fig. 2. A blue shift is observed for both peaks while thinning the thickness. With longer T/S distance, the shift in E₂ ^H was fully relaxed even with a thickness of 5 nm. On the other hand, only a limited relaxation was obtained with A₁LO.

In conclusion, we have confirmed that longer T/S distance can relax the thickness-dependent compressive stress in AlScN films. The stress relaxation can contribute to stabilize the coercive field for thin ferroelectric AlScN films.

Acknowledgement

This study was supported by MEXT Initiative to Establish Next-generation Novel Integrated Circuits Centers (X-NICS) JPJ011438

Reference

[1] S. Fichtner, N. Wolff, F. Lofink, L. Kienle, and B. Wagner, “AlScN: A III-V semiconductor based ferroelectric,” J. Appl. Phys. 125, 114103 (2019).

[2] G. Schönweger, N. Wolff, M. R. Islam, M. Gremmel, A. Petraru, Kienle, H. Kohlstedt, S. Fichtner” In-Grain Ferroelectric Switching in Sub-5 nm Thin

Al_0.74Sc_0.26N Films at 1 V” Adv. Sci. 10, 2302296 (2023)

[3] Y. Tokita, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kuniyuki “Identification of cpmpressive strain in thin ferroelectric Al_1-xSc_xN filns by Raman spectrascopy” Jpn. J. Appl. Phys. 63 04SP31 (2024)

[4] A. Neidhardt, U. Reinhold, E. schroeter, W. Wuttke ” Position dependence in planar magnetron sputtering of TiN films” Thin Solid Films, 173109 127 (1989)

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DOI： 10.1149/ma2024-02201814mtgabs

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Threshold Voltage Shift of P-Ch GaN Misfets with Charge Trapping Insulator

Takuya Hoshii, Tatsuro Toyoda, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima

ECS Meeting Abstracts MA2024-02 ( 20 ) 1819 - 1819 2024.11

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Authorship：Lead author Language：English Publishing type：Research paper (international conference proceedings) Publisher：The Electrochemical Society

The realization of high-performance p-channel devices and threshold voltage control are desired to achieve GaN CMOS circuits. Recess-gate devices on polarized junction substrates have been reported as candidates for p-channel devices that can be integrated with n-channel devices, including HEMTs [1]. In addition, we have reported that the use of a quasi-atomic layer etching process with nitrogen plasma to fabricate the recessed gate structure improves the MIS interface characteristics and increases the drive current [2]. However, regarding threshold voltage control, the recessed gate structure may not be sufficient. Although control by the back gate is a candidate, other control methods are worth considering for circuit simplicity. In this study, we investigated the threshold control by introducing a charge trapping layer into the gate insulator.

Figure 1 shows the schematic structure of p-channel GaN MISFETs with a charge-trapping layer fabricated on a polarization junction substrate. The insulator, Al₂O₃/HfO₂/Al₂O₃ layer, was formed by atomic layer deposition. A negative threshold voltage shift could be expected when positive charges are trapped in the HfO₂ layer or at the HfO₂/Al₂O₃ interfaces.

Figure 2 shows the I _d-V _g characteristics of a p-channel MISFET. V _d was set to -3 V, and two consecutive double-sweep measurements were performed. Figure 2(a) shows the results of measurements with a V _g range of +5 to -6 V. It shows a large hysteresis, with a negative sweep changing to the on state at a positive voltage and a positive sweep to the off state at a negative voltage. The second sweep also reproduces the first sweep's characteristics. This result can be attributed to the fact that the negative gate voltage introduces positive charges into the charge-trapping layer, resulting in a negative threshold voltage, and that the positive gate voltage completely removes the positive charge from the charge-capture layer, resulting in a positive threshold voltage again. On the other hand, Fig. 2(b) shows that, using the V _g range of +2 to -6 V, the threshold voltage of the negative sweep in the second sweep shifts to negative. This result indicates that only partial charge was released from the charge trapping layer, and the remaining charge caused the shift. Also, Fig. 2(c) shows the results of the V _g range of 0 to -6 V. The hysteresis at the second sweep is significantly reduced, indicating normally-off operation. This is considered to be a result of the positive charge captured in the charge-trapping layer being retained in the negative gate voltage range.

Furthermore, Figs. 2(d), (e), and (f) present the vertical axes of Figs. 2(a), (b), and (c)c in logarithmic form, respectively, and in addition, I _g is also shown. The gate leakage current is kept low compared to the drain current, and an on-off ratio of more than five orders of magnitude is obtained. Additionally, there is no significant change in the subthreshold slope due to threshold voltage variation, indicating that the charging and discharging of the charge trapping layer does not significantly affect the carrier transport properties in channel region.

In this study, the threshold voltage shift and resulting normally-off operation of p-channel GaN MOSFETs is demonstrated by using a charge trapping layer. The same effect is promising for threshold voltage control of n-channel devices, and this technique is expected to be used for power-saving GaN CMOS circuits with two-dimensional carrier gases.

Acknowledgments

This work was supported by JSPS KAKENHI Grant Number 21K04172.

References

[1] A. Nakajima, et al., IET Power Electron. 11, 689 (2018).

[2] S. Kimura, et al., in The International Workshop on Nitride Semiconductors 2022,p. 126.

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DOI： 10.1149/ma2024-02201819mtgabs

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Oxygen-Atom Incorporated Ferroelectric AlScN Capacitors for Multi-Level Operation Reviewed

Si-Meng Chen, Hirofumi Nishida, Sung-Lin Tsai, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Edward Yi Chang, Kuniyuki Kakushima

IEEE Electron Device Letters 45 ( 11 ) 2090 - 2093 2024.11

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Language：English Publishing type：Research paper (scientific journal) Publisher：Institute of Electrical and Electronics Engineers (IEEE)

DOI： 10.1109/led.2024.3453111

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Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO₂ gate dielectric with H₂O plasma Reviewed

An Li, Takuya Hoshii, Kazuo Tsutsui, Hitoshi Wakabayashi, Kuniyuki Kakushima

Japanese Journal of Applied Physics 63 ( 6 ) 066503 - 066503 2024.6

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Language：English Publishing type：Research paper (scientific journal) Publisher：IOP Publishing

Abstract

SiC MOS devices with SiO₂ gate dielectrics deposited by an atomic layer deposition (ALD) process with remote H₂O plasma were investigated. H₂O plasma was found to have a strong oxidizing effect compared to that of remote O₂ plasma. Hydroxyl groups found in the SiO₂ films with H₂O plasma were removed by post-deposition annealing (PDA), and no difference in the IR absorption spectra was found between H₂O and O₂ plasma samples. A low leakage current and a high breakdown field of 10.5 MV cm⁻¹ were obtained, comparable to the SiO₂ films formed by O₂ plasma. SiC capacitors showed reduced hysteresis of 0.07 V and a better bias stress resistance than an O₂-plasma-formed SiO₂ film. Moreover, MOSFETs revealed a high peak mobility of 26 cm²V⁻¹s⁻¹. We postulate that removing hydroxyl groups during the PDA can effectively remove the near-interface defects of SiO₂/SiC.

DOI： 10.35848/1347-4065/ad52db

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Identification of compressive strain in thin ferroelectric Al_1–xSc_xN films by Raman spectroscopy Reviewed

Yukimura Tokita, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima

Japanese Journal of Applied Physics 63 ( 4 ) 04SP31 - 04SP31 2024.4

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Abstract

Compressive strain in thin ferroelectric Al_1–xSc_xN films with different Sc atom concentrations (x) on sapphire substrates was identified by Raman spectroscopy measurement. Both E₂ ^H and A₁(LO) spectra showed a blue shift while thinning the Al_1–xSc_xN film thicknesses. The shift was enhanced with higher Sc atom concentration. A stress of the order of 200 MPa was applied from the substrate interface, resulting in a strain of the order of 10⁻⁴. The presence of the compressive strain at the bottom interface can be correlated to the increase in the coercive field for thinner Al_1–xSc_xN films.

DOI： 10.35848/1347-4065/ad2f16

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Reactive sputtering of ferroelectric AlScN films with H₂ gas flow for endurance improvement Reviewed

Si-Meng Chen, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Edward Yi Chang, Kuniyuki Kakushima

Japanese Journal of Applied Physics 63 ( 3 ) 03SP45 - 03SP45 2024.2

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Abstract

The impact of H₂ gas flow in the reactive sputtering process to 60 nm-thick ferroelectric Al_1−xSc_xN films is investigated with x of 0.26 (high-Sc) and 0.12 (low-Sc). Al_1−xSc_xN films exhibit clear ferroelectric switching, confirming the robustness against reducing ambient. The dielectric constants (ε _i) as well as the leakage current decrease, and the breakdown field (E _BD) increases with H₂ flow. Although the remanent polarization (P _r) decreases with H₂ flow, the wake-up effect is suppressed for the high-Sc film, and the fatigue effect is weakened for the low-Sc film. By probing the change in the coercive field (E _c) after the switching cycle test, we anticipate oxygen impurities bonded to Sc and Al atoms are the source of wake-up and fatigue effects, respectively. As a result, a high endurance cycle of 2 × 10⁷ times was achieved for low-Sc films with H₂ flow.

DOI： 10.35848/1347-4065/ad21bd

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Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam Reviewed

Akira Uedono, Yasuki Kimura, Takuya Hoshii, Kuniyuki Kakushima, Masatomo Sumiya, Masayuki Tsukui, Kiyotaka Miyano, Ichiro Mizushima, Takashi Yoda, Kazuo Tsutsui

Journal of Applied Physics 133 ( 22 ) 2023.6

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Vacancy-type defects in AlInN(10 nm)/AlN(1–2 nm)/GaN were probed by using a positron annihilation technique. The crystal quality of the AlInN layer and atomic diffusion near heterointerfaces were also studied by x-ray diffraction reciprocal space mapping, transmission electron microscopy, and energy-dispersive x-ray spectroscopy. For an as-deposited sample without an AlN spacer layer (AlInN/GaN), Ga atoms diffused into the AlInN layer, and as a result, the concentration of Ga-vacancy-type defects in the GaN layer increased. The vacancy concentration was decreased by inserting the AlN layer, which was attributed to the suppression of out-diffusion of Ga from the GaN layer. The effect of the thickness of the AlN layer on the mobility of two-dimensional electron gas is discussed in terms of the introduction of vacancies into the channel region. The annealing behaviors of vacancies in the GaN layer and atomic exchange near heterointerfaces are also discussed.

DOI： 10.1063/5.0153128

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Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact Reviewed

Takamasa Kawanago, Ryosuke Kajikawa, Kazuto Mizutani, Sung-Lin Tsai, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi

IEEE Journal of the Electron Devices Society 11 15 - 21 2023

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DOI： 10.1109/jeds.2022.3224206

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Robust formation of ferroelectric HfO₂ films by Y₂O₃ sub-monolayer lamination Reviewed

Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Edward Y. Chang, Kuniyuki Kakushima

Applied Physics Express 15 ( 12 ) 121002 - 121002 2022.11

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Abstract

Process robustness of ferroelectric HfO₂ films formed by dopant-laminated structure is investigated. Ferroelectric hysteresis obtained by the sub-monolayer Y₂O₃ laminated structure confirms that entire doping to the HfO₂ films is not indispensable to stabilizing the ferroelectric phase. The Y-laminated HfO₂ capacitors show robustness against the oxygen plasma exposure time, in contrast to the positive hysteresis shift for uniformly doped HfO₂ ones. The number of switching cycles was increased, presumably owing to the reduction of oxygen vacancies associated with the incorporated dopants. Moreover, the leakage current showed a reduction with a higher breakdown voltage.

DOI： 10.35848/1882-0786/ac9d20

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Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate Reviewed

M. Nishizawa, T. Hoshii, H. Wakabayashi, K. Tsutsui, Y. Daigo, I. Mizushima, T. Yoda, K. Kakushima

Japanese Journal of Applied Physics 61 ( SH ) SH1011 - SH1011 2022.6

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DOI： 10.35848/1347-4065/ac6215

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GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation Reviewed

Si-Meng Chen, Sung-Lin Tsai, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Edward Yi Chang, Kuniyuki Kakushima

Japanese Journal of Applied Physics 61 ( SH ) SH1007 - SH1007 2022.6

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Abstract

A threshold voltage (V _th) shifting method for GaN high electron mobility transistors using self-upward polarized Al_1-xSc_xN gate dielectrics was proposed. The direction of the spontaneous polarization was controlled by the insertion of an Al₂O₃ layer between the Al_1-xSc_xN and the AlGaN layers. A V _th shift of 8 V was found by changing the direction of the polarization. The thickness scaling in the Al_1-xSc_xN layer from 40 to 30 nm showed a linear relationship to the V _th, revealing to retain a high spontaneous polarization. A high positive V _th for enhancement-mode (E-mode) operation is feasible with the method in combination with a recess process.

DOI： 10.35848/1347-4065/ac5d13

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Field cycling behavior and breakdown mechanism of ferroelectric Al_0.78Sc_0.22N films Reviewed

Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Tien-Kan Chung, Edward Yi Chang, Kuniyuki Kakushima

Japanese Journal of Applied Physics 61 ( SJ ) SJ1005 - SJ1005 2022.6

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Abstract

The effects of field cycling of Al_0.78Sc_0.22N capacitors on ferroelectric properties are investigated. In the first hundreds of switching cycles, the reduction in the switching voltage was observed, possibly due to the formation of nitrogen-vacancy to facilitate the atom displacements. With further switching cycles, fatigue effect was observed, especially for domains with low switching voltage. The leakage current analysis indicates continuous downward band bending with the number of switching cycles, effectively reducing the Schottky barrier height for electrons. The breakdown of Al_0.78Sc_0.22N films is triggered by the Joule heat due to excessive leakage current. The mechanism is in contrast to conventional ferroelectric materials, where the breakdown is triggered by Joule heat at the local conductive filaments.

DOI： 10.35848/1347-4065/ac54f6

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Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure Reviewed

Atsuki Miyata, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima

Japanese Journal of Applied Physics 61 ( SH ) SH1005 - SH1005 2022.4

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Abstract

Photodetectors based on an AlGaN/GaN high electron mobility transistor on Si have a long decay time after removal of light irradiation because of the large number of defects. This behavior is unsuitable for applications that require fast response. In several papers, though decay time was suppressed by thermal heating, it has problems such as fabrication complexity and power consumption. In this paper, we propose a substrate voltage (V _sub) application method for suppressing decay time, which modulates the V _sub immediately after the removal of UV irradiation, which promotes injecting electrons from two-dimensional electron gas to the carbon-doped GaN (C-GaN) layer. The decay time was suppressed from 75 to 2 s. Moreover, the effectiveness of reset voltage application is confirmed by a demonstration that changes the UV intensity continuously.

DOI： 10.35848/1347-4065/ac6216

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Influence of sputtering power on the switching and reliability of ferroelectric Al_0.7Sc_0.3N films Reviewed

Ryota Shibukawa, Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima

Japanese Journal of Applied Physics 61 ( SH ) SH1003 - SH1003 2022.4

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Abstract

The sputtering power dependence of 40 nm thick Al_0.7Sc_0.3N ferroelectric properties was characterized from 200 to 300 W. X-ray rocking curve revealed higher orientated growth into the c-axis with higher sputtering power. Films formed by high power showed reduced leakage current with a higher breakdown field, enabling one to apply the high field for ferroelectric switching. A high remnant polarization (P _r) of 130 μC cm⁻² was obtained with a coercive field (E _c) of 6 MV cm⁻¹. The switching cycle test revealed a wake-up effect for all the films; increasing the leakage current and modifying the E _c. We anticipate the change is attributed to the existence and the generation of nitrogen vacancies (V _N) in the films.

DOI： 10.35848/1347-4065/ac5db0

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Experimental demonstration of high-gain CMOS inverter operation at low V _dd down to 0.5 V consisting of WSe₂ n/p FETs Reviewed

Takamasa Kawanago, Takahiro Matsuzaki, Ryosuke Kajikawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi

Japanese Journal of Applied Physics 61 ( SC ) SC1004 - SC1004 2022.2

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DOI： 10.35848/1347-4065/ac3a8e

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Cerium oxide capping on Y-doped HfO₂ films for ferroelectric phase stabilization with endurance improvement Reviewed

Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Edward Y. Chang, Kuniyuki Kakushima

Japanese Journal of Applied Physics 61 ( 2 ) 021006 - 021006 2022.2

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Abstract

The effects of 1 nm thick CeO _x capping on 7.5 nm thick Y-doped HfO₂ films on the ferroelectric characteristics are investigated. From the ferroelectric characteristics of the samples annealed at different temperatures from 450 °C to 600 °C and annealing durations, the time (τ) required to stabilize the ferroelectric phase at each temperature was shortened by the capping. The identical activation energy (E _a) of 2.65 eV for ferroelectric stabilization without and with capping suggests the same kinetics for phase transformation. However, an increase in the remnant polarization (P _r) was obtained. Only a few Ce atoms diffused into the underlying HfO₂ film even after 600 °C annealing. Ferroelectric switching tests revealed an improvement in endurance from 10⁷ to 10¹⁰ by the capping, presumably owing to the suppression of conductive filament formation. Therefore, CeO _x capping is effective in promoting the ferroelectric phase in HfO₂ with high switching endurance.

DOI： 10.35848/1347-4065/ac468b

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Accurate TCAD simulation of trench-gate IGBTs and its application to prediction of carrier lifetime requirements for future scaled devices Reviewed

M. Watanabe, N. Shigyo, T. Hoshii, K. Furukawa, K. Kakushima, K. Satoh, T. Matsudai, T. Saraya, T. Takakura, I. Muneta, H. Wakabayashi, A. Nakajima, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai

2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) 1 - 3 2021.4

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DOI： 10.1109/edtm50988.2021.9420922

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On the thickness scaling of ferroelectricity in Al_0.78Sc_0.22N films Reviewed

Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Tien-Kan Chung, Edward Yi Chang, Kuniyuki Kakushima

Japanese Journal of Applied Physics 60 ( SB ) SBBA05 - SBBA05 2021.4

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DOI： 10.35848/1347-4065/abef15

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A possible origin of the large leakage current in ferroelectric Al_1−xSc_xN films Reviewed

Junji Kataoka, Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima

Japanese Journal of Applied Physics 60 ( 3 ) 030907 - 030907 2021.2

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DOI： 10.35848/1347-4065/abe644

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Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering Reviewed

Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Tien-Kan Chung, Edward Y. Chang, Kuniyuki Kakushima

Applied Physics Letters 118 ( 8 ) 2021.2

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DOI： 10.1063/5.0035335

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High field-effect mobility with suppressed negative threshold voltage shift in 4H-SiC MOSFET with cerium oxide interfacial layer Reviewed

Jinhan Song, Atsuhiro Ohta, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima

Japanese Journal of Applied Physics 60 ( 3 ) 030901 - 030901 2021.2

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DOI： 10.35848/1347-4065/abdf7c

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N-type conduction of sputter-deposited polycrystalline Al_0.78Sc_0.22N films by Si ion implantation Reviewed

Junji Kataoka, Sung-Lin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima

Applied Physics Express 14 ( 2 ) 021002 - 021002 2021.1

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DOI： 10.35848/1882-0786/abd6a0

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3.3 kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology Reviewed

T. Saraya, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, K. Satoh, T. Matsudai, K. Kakushima, T. Hoshii, K. Tsutsui, H. Iwai, A. Ogura, W. Saito, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto

2020 IEEE International Electron Devices Meeting (IEDM) 5.3.1 - 5.3.4 2020.12

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DOI： 10.1109/iedm13553.2020.9371909

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Modeling and Simulation of Si IGBTs Reviewed

N. Shigyo, M. Watanabe, K. Kakushima, T. Hoshii, K. Furukawa, A. Nakajima, K. Satoh, T. Matsudai, T. Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) 129 - 132 2020.9

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DOI： 10.23919/sispad49475.2020.9241627

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Hall-effect mobility enhancement of sputtered MoS₂ film by sulfurization even through Al₂O₃ passivation film simultaneously preventing oxidation Reviewed

Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Haruki Tanigawa, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi

Japanese Journal of Applied Physics 59 ( 10 ) 105501 - 105501 2020.9

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Highly Oriented Growth of Al_xSc_1-X N Ferroelectric Film on W Bottom Electrodes

SungLin Tsai, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima

ECS Transactions 98 ( 3 ) 57 - 61 2020.9

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DOI： 10.1149/09803.0057ecst

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Electrical Characteristics of Atomic Layer Deposited Y-Silicate Dielectrics

Atsuhiro Ohta, Jinhan Song, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima

ECS Transactions 98 ( 3 ) 153 - 158 2020.9

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DOI： 10.1149/09803.0153ecst

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Bipolar Transistor Test Structures for Extracting Minority Carrier Lifetime in IGBTs Reviewed

Kiyoshi Takeuchi, Munetoshi Fukui, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Shinichi Suzuki, Yohichiroh Numasawa, Naoyuki Shigyo, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Wataru Saito, Shin-Ichi Nishizawa, Masanori Tsukuda, Ichiro Omura, Hiromichi Ohashi, Toshiro Hiramoto

IEEE Transactions on Semiconductor Manufacturing 33 ( 2 ) 159 - 165 2020.5

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DOI： 10.1109/tsm.2020.2972369

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Atomic layer deposition of Y₂O₃ thin films with a high growth per cycle by Ar multiple boost injection Reviewed

Jinhan Song, Y. Lin, T. Hoshii, H. Wakabayashi, K. Tsutsui, K. Kakushima

Japanese Journal of Applied Physics 59 ( SM ) SMMB01 - SMMB01 2020.4

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DOI： 10.35848/1347-4065/ab87f4

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Switching Dynamics Measurement of Ferroelectric Y-Doped HfO₂ M-I-M Capacitor

YuWei Lin, Kazuto Mizutani, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima

ECS Transactions 97 ( 3 ) 39 - 43 2020.4

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DOI： 10.1149/09703.0039ecst

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Electrical Characterization of Sputter Deposited Al_xSc_1-XN Thin Films

SungLin Tsai, Kazuki Kusafuka, Takuya Hoshii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima

ECS Transactions 97 ( 3 ) 45 - 48 2020.4

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DOI： 10.1149/09703.0045ecst

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Enhancement-mode accumulation capacitance–voltage characteristics in TiN/ALD-Al₂O₃/sputtered-MoS₂ top-gated stacks Reviewed

Haruki Tanigawa, Kentaro Matsuura, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi

Japanese Journal of Applied Physics 59 ( SM ) SMMC01 - SMMC01 2020.4

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Impact of structural parameter scaling on on-state voltage in 1200 V scaled IGBTs Reviewed

Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Kuniyuki Kakushima, Takuya Hoshii, Kazuo Tsutsui, Hiroshi Iwai, Shin-ichi Nishizawa, Ichiro Omura, Toshiro Hiramoto

Japanese Journal of Applied Physics 59 ( SG ) SGGD18 - SGGD18 2020.3

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DOI： 10.35848/1347-4065/ab7414

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NiSi₂ as a bottom electrode for enhanced endurance of ferroelectric Y-doped HfO₂ thin films Reviewed

Joel Molina-Reyes, Takuya Hoshii, Shun-Ichiro Ohmi, Hiroshi Funakubo, Atsushi Hori, Ichiro Fujiwara, Hitoshi Wakabayashi, Kazuo Tsutsui, Kuniyuki Kakushima

Japanese Journal of Applied Physics 59 ( SG ) SGGB06 - SGGB06 2020.2

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DOI： 10.35848/1347-4065/ab6b7c

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Switching of 3300V Scaled IGBT by 5V Gate Drive

T. Hiramoto, K. Satoh, T. Matsudai, W. Saito, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, H. Wakabayashi, K. Tsutsui, T. Sarava, H. Iwai, A. Ogura, S. Nishizawa, I. Omura, H. Ohash, K. Itou, T. Takakura, M. Fukui, S. Suzuki, K. Takeuchi, M. Tsukuda, Y. Numasawa

2019 IEEE 13th International Conference on ASIC (ASICON) 1 - 3 2019.10

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DOI： 10.1109/asicon47005.2019.8983633

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Analysis of back-gate effect on threshold voltage of p-channel GaN MOSFETs on polarization-junction substrates Reviewed

Takuya Hoshii, Akira Nakajima, Shin-ichi Nishizawa, Hiromichi Ohashi, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui

Japanese Journal of Applied Physics 58 ( 6 ) 061006 - 061006 2019.5

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DOI： 10.7567/1347-4065/ab1c78

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Fundamental study on reducing on-resistance by introducing strain into silicon vertical power devices Reviewed

Takeya Inoue, Takuya Hoshii, Takuo Kikuchi, Hidehiko Yabuhara, Kazuyuki Ito, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, Junichi Tonotani, Kazuo Tsutsui

2019 Electron Devices Technology and Manufacturing Conference (EDTM) 407 - 409 2019.3

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DOI： 10.1109/edtm.2019.8731121

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High Hall-Effect Mobility of Atomic-Layered Polycrystalline-ZrS₂ Film using Sputtering and Sulfur Annealing Reviewed

Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi

2019 Electron Devices Technology and Manufacturing Conference (EDTM) 194 - 196 2019.3

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DOI： 10.1109/edtm.2019.8731243

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Vertical Bipolar Transistor Test Structure for Measuring Minority Carrier Lifetime in IGBTs Reviewed

K. Takeuchi, M. Fukui, T. Saraya, K. Itou, T. Takakura, S. Suzuki, Y. Numasawa, K. Kakushima, T. Hoshii, K. Furukawa, M. Watanabe, N. Shigyo, H. Wakabayashi, M. Tsukuda, A. Ogura, K. Tsutsui, H. Iwai, S. Nishizawa, I. Omura, H. Ohashi, T. Hiramoto

2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS) 98 - 101 2019.3

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DOI： 10.1109/icmts.2019.8730922

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High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS₂Film Using UHV RF Magnetron Sputtering and Sulfurization Reviewed

Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi

IEEE Journal of the Electron Devices Society 7 1258 - 1263 2019

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DOI： 10.1109/jeds.2019.2943609

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Hall-Effect Mobility Enhancement of Sputtered MoS2 Film by Vapor Phase Sulfurization through Al<inf>2</inf>O<inf>3</inf> Passivation Film Reviewed

Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Haruki Tanigawa, Takumi Ohashi, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi

2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) 1 - 2 2018.10

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DOI： 10.1109/s3s.2018.8640213

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Tailoring sub-bandgap of CuGaS2 thin film via chromium doping by facile chemical spray pyrolysis technique Reviewed

S. Kalainathan, N. Ahsan, T. Hoshii, Y. Okada, T. Logu, K. Sethuraman

Journal of Materials Science: Materials in Electronics 29 ( 22 ) 19359 - 19367 2018.9

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DOI： 10.1007/s10854-018-0065-2

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Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately Reviewed

T. Hoshii, K. Furukawa, K. Kakushima, M. Watanabe, N. Shigvo, T. Saraya, T. Takakura, K. Ltou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Lwai

2018 48th European Solid-State Device Research Conference (ESSDERC) 26 - 29 2018.9

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DOI： 10.1109/essderc.2018.8486870

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New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment Reviewed

K. Kakushima, T. Hoshii, M. Watanabe, N. Shizyo, K. Furukawa, T. Saraya, T. Takakura, K. Ltou, M. Fukui, S. Suzuki, K. Takeuchi, I. Muneta, H. Wakabayashi, Y. Numasawa, A. Ogura, S. Nishizawa, K. Tsutsui, T. Hiramoto, H. Ohashi, H. Iwai

2018 IEEE Symposium on VLSI Circuits 105 - 106 2018.6

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DOI： 10.1109/vlsic.2018.8502399

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Interface State Density of Atomic Layer Deposited Al₂O₃onβ-Ga₂O₃

Chen Yi Su, Takuya Hoshii, Iriya Muneta, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima

ECS Transactions 85 ( 7 ) 27 - 30 2018.4

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DOI： 10.1149/08507.0027ecst

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3D Scaling of Si-IGBT Invited Reviewed

H. Iwai, K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi

Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Abba Granada Hotel, Granada, Spain 2018.3

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Photovoltaic properties of lateral ultra-thin Si p-i-n structure

Suguru Tatsunokuchi, I. Muneta, T. Hoshii, H. Wakabayashi, K. Tsutsui, H. Iwai, K. Kakushima

2018 China Semiconductor Technology International Conference (CSTIC) 1 - 3 2018.3

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DOI： 10.1109/cstic.2018.8369314

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Individual Atomic Imaging of Multiple Dopant Sites in As-Doped Si Using Spectro-Photoelectron Holography Reviewed

Kazuo Tsutsui, Tomohiro Matsushita, Kotaro Natori, Takayuki Muro, Yoshitada Morikawa, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita

Nano Letters 17 ( 12 ) 7533 - 7538 2017.12

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DOI： 10.1021/acs.nanolett.7b03467

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3D scaling for insulated gate bipolar transistors (IGBTs) with low V<inf>ce(sat)</inf>

K. Tsutsui, K. Kakushima, T. Hoshii, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai

2017 IEEE 12th International Conference on ASIC (ASICON) 1137 - 1140 2017.10

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DOI： 10.1109/asicon.2017.8252681

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Demonstration of Reduction in Vce(sat) of IGBT based on a 3D Scaling Principle Invited Reviewed

K. Kakushima, T. Hoshii, K. Tsutsui, A. Nakajima, S. Nishizawa, H. Wakabayashi, I. Muneta, K. Sato, T. Matsudai, W. Saito, T. Saraya, K. Itou, M. Fukui, S. Suzuki, M. Kobayashi, T. Takakura, T. Hiramoto, A. Ogura, Y. Numasawa, I. Omura, H. Ohashi, H. Iwai

International Conference on Solid-State Devices and Materials (SSDM), Sendai International Center, Miyagi 669 - 670 2017.9

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Effect of Si doping and sunlight concentration on the performance of InAs/GaAs quantum dot solar cells Reviewed

Shunya Naito, Katsuhisa Yoshida, Naoya Miyashita, Ryo Tamaki, Takuya Hoshii, Yoshitaka Okada

Journal of Photonics for Energy 7 ( 2 ) 025505 - 025505 2017.6

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DOI： 10.1117/1.jpe.7.025505

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Low temperature ohmic contact for p-type GaN using Mg electrodes Reviewed

K. Kakushima, Y. Ikeuchi, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, T. Kikuchi, S. Ishikawa

2017 17th International Workshop on Junction Technology (IWJT) 85 - 86 2017.6

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DOI： 10.23919/iwjt.2017.7966523

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Multiband Formation in Cr doped CuGaS2 Thin Films Synthesized by Chemical Spray Pyrolysis Reviewed

Nazmul Ahsan, Sivaperuman Kalainathan, Naoya Miyashita, Takuya Hoshii, Yoshitaka Okada

2017 IEEE 44th Photovoltaic Specialist Conference (PVSC) 2334 - 2337 2017.6

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DOI： 10.1109/pvsc.2017.8366569

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Characterization of Cr Doped CuGaS2 Thin Films Synthesized By Chemical Spray Pyrolysis Reviewed

Nazmul Ahsan, Sivaperuman Kalainathan, Naoya Miyashita, Takuya Hoshii, Yoshitaka Okada

Mechanics, Materials Science and Engineering 9 380 - 387 2017

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DOI： 10.2412/mmse.53.55.304

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Admittance spectroscopy analysis on the interfacial defect levels in the surface-activated bonding of GaAs Reviewed

Daiji Yamashita, Kentaroh Watanabe, Masahisa Fujino, Takuya Hoshii, Yoshitaka Okada, Yoshiaki Nakano, Tadatomo Suga, Masakazu Sugiyama

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) 2317 - 2319 2016.6

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DOI： 10.1109/pvsc.2016.7750051

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Maskless fabrication of broadband antireflection nanostructures on glass surfaces Reviewed

E E Tamayo R, T Hoshii, R Tamaki, K Watanabe, M Sugiyama, Y Okada, K Miyano

Journal of Optics 18 ( 6 ) 064008 - 064008 2016.5

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DOI： 10.1088/2040-8978/18/6/064008

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Photoassisted impedance spectroscopy for quantum dot solar cells Reviewed

Takuya Hoshii, Shunya Naitoh, Yoshitaka Okada

Japanese Journal of Applied Physics 55 ( 4S ) 04ES11 - 04ES11 2016.3

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DOI： 10.7567/jjap.55.04es11

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Plasma etching antireflection nanostructures on optical elements in concentrator photovoltaic systems Reviewed

Efrain Eduardo Tamayo Ruiz, Kentaroh Watanabe, Ryo Tamaki, Takuya Hoshii, Masakazu Sugiyama, Yoshitaka Okada, Kenjiro Miyano, Aleksandra Cvetkovic, Rubén Mohedano, Maikel Hernandez

Journal of Photonics for Energy 5 ( 1 ) 057006 - 057006 2014.12

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DOI： 10.1117/1.jpe.5.057006

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Quantum size effects in GaAs nanodisks fabricated using a combination of the bio-template technique and neutral beam etching Reviewed

Yosuke Tamura, Toshiyuki Kaizu, Takayuki Kiba, Makoto Igarashi, Rikako Tsukamoto, Akio Higo, Weiguo Hu, Cedric Thomas, Mohd Erman Fauzi, Takuya Hoshii, Ichiro Yamashita, Yoshitaka Okada, Akihiro Murayama, Seiji Samukawa

Nanotechnology 24 ( 28 ) 285301 - 285301 2013.6

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DOI： 10.1088/0957-4484/24/28/285301

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Fabrication of broadband antireflection structures on glass substrates by Reactive Ion Etching for application on homogenizers in CPV systems Reviewed

R. Efrain E. Tamayo, Kentaroh Watanabe, Masakazu Sugiyama, Takuya Hoshii, Yasushi Shoji, Yoshitaka Okada, Kenjiro Miyano

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) 0489 - 0492 2013.6

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DOI： 10.1109/pvsc.2013.6744196

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1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density Reviewed

R. Suzuki, N. Taoka, M. Yokoyama, S. Lee, S. H. Kim, T. Hoshii, T. Yasuda, W. Jevasuwan, T. Maeda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, S. Takagi

Applied Physics Letters 100 ( 13 ) 2012.3

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DOI： 10.1063/1.3698095

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Impact of Fermi level pinning inside conduction band on electron mobility of In<inf>x</inf>Ga<inf>1&#x2212;x</inf>As MOSFETs and mobility enhancement by pinning modulation Reviewed

N. Taoka, M. Yokoyama, S.H. Kim, R. Suzuki, R. Iida, S. Lee, T. Hoshii, W. Jevasuwan, T. Maeda, T. Yasuda, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka, S. Takagi

2011 International Electron Devices Meeting 27.2.1 - 27.2.4 2011.12

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DOI： 10.1109/iedm.2011.6131622

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(Invited) MOS Interface Control Technologies for III-V/Ge Channel MOSFETs Invited

Shinichi Takagi, Rui Zhang, Takuya Hoshii, Noriyuki Taoka, Mitsuru Takenaka

ECS Transactions 41 ( 3 ) 3 - 20 2011.10

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DOI： 10.1149/1.3633015

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AC response analysis of C–V curves and quantitative analysis of conductance curves in Al2O3/InP interfaces Reviewed

Noriyuki Taoka, Masafumi Yokoyama, Sang Hyeon Kim, Rena Suzuki, Takuya Hoshii, Ryo Iida, Sunghoon Lee, Yuji Urabe, Noriyuki Miyata, Tetsuji Yasuda, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi

Microelectronic Engineering 88 ( 7 ) 1087 - 1090 2011.7

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DOI： 10.1016/j.mee.2011.03.036

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Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2 Reviewed

T. Hoshii, M. Yokoyama, H. Yamada, M. Hata, T. Yasuda, M. Takenaka, S. Takagi

Applied Physics Letters 97 ( 13 ) 2010.9

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DOI： 10.1063/1.3464170

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Initial growth of InAs on P-terminated Si(111) surfaces to promote uniform lateral growth of InGaAs micro-discs on patterned Si Reviewed

Yoshiyuki Kondo, Momoko Deura, Yuki Terada, Takuya Hoshii, Mitsuru Takenaka, Shinichi Takagi, Yoshiaki Nakano, Masakazu Sugiyama

Journal of Crystal Growth 312 ( 8 ) 1348 - 1352 2010.4

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DOI： 10.1016/j.jcrysgro.2009.11.064

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Fabrication and characterization of metal-insulator-semiconductor structures by direct nitridation of InP surfaces Reviewed

T. Haimoto, T. Hoshii, S. Nakagawa, M. Takenaka, S. Takagi

Applied Physics Letters 96 ( 1 ) 2010.1

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DOI： 10.1063/1.3269906

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Source/drain formation by using epitaxial regrowth of N+InP for III&#x2013;V nMOSFETs Reviewed

Mitsuru Takenaka, Koji Takeda, Takuya Hoshii, Takuo Tanemura, Masakazu Sugiyama, Yoshiaki Nakano, Shinichi Takagi

2009 IEEE International Conference on Indium Phosphide & Related Materials 111 - 114 2009.5

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DOI： 10.1109/iciprm.2009.5012454

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Effect of Ga content on crystal shape in micro-channel selective-area MOVPE of InGaAs on Si Reviewed

Momoko Deura, Takuya Hoshii, Mitsuru Takenaka, Shinichi Takagi, Yoshiaki Nakano, Masakazu Sugiyama

Journal of Crystal Growth 310 ( 23 ) 4768 - 4771 2008.11

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DOI： 10.1016/j.jcrysgro.2008.07.086

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Epitaxial lateral overgrowth of InGaAs on SiO₂ from (111) Si micro channel areas Reviewed

Takuya Hoshii, Momoko Deura, Masakazu Sugiyama, Ryosho Nakane, Satoshi Sugahara, Mitsuru Takenaka, Yoshiaki Nakano, Shinichi Takagi

physica status solidi c 5 ( 9 ) 2733 - 2735 2008.7

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DOI： 10.1002/pssc.200779309

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Low Voltage Operation of Ferroelectric AlScN Films by Oxygen Profiling

Sung-Lin Tsai, Hoshii Takuya, Tsutsui Kazuo, Wakabayashi Hitoshi, Kakushima Kuniyuki

IEEJ Transactions on Electronics, Information and Systems 145 ( 3 ) 381 - 385 2025.3

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A method to reduce the high coercive field (E_c) of ferroelectric (FE) Al_0.7Sc_0.3N films was proposed. By proper oxygen incorporation to form Al_0.7Sc_0.3O_0.2N_0.8, E_c reduction from 3.8 to 2.8 MV/cm was achieved while maintaining a high remnant polarization (P_r) of over 90 µC/cm². The E_c reduction is presumably caused by the O and Al atom complex vacancies; different from the Sc-atom induced distortion to decrease the ratio of wurtzite lattice constant (c/a). A dielectric constant increase from 17 to 30 supports the E_c reduction. By designing the oxygen depth profile in the film, FE property was obtained with a thickness down to 7 nm. Even the E_c increase with thinner thickness is still presented, a ferroelectric switching was confirmed at a voltage below 5 V.

DOI： 10.1541/ieejeiss.145.381

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TMDCを用いたFETおよびLSIについて—TMDC for FET and LSI application—2次元層状物質研究の最前線

川那子高暢, 宗田伊理也, 星井拓也, 角嶋邦之, 筒井一生, 若林整

応用電子物性分科会誌 = Bulletin of solid state physics and applications / 応用物理学会応用電子物性分科会編 30 ( 1 ) 29 - 34 2024

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Growth rate and electrical properties of atomic layer deposition of In₂O₃ films with water vapor plasma

高橋颯太, PARK J., 星井拓也, 高橋崇典, 砂川美佐, 霍間勇輝, 笘井重和, 筒井一生, 若林整, 浦岡行治, 角嶋邦之

応用物理学会春季学術講演会講演予稿集(CD-ROM) 71st 2024

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Evaluation of ALD polycrystalline indium oxide films using O₂ and H₂O plasma

PARK J., 高橋颯太, 星井拓也, 高橋崇典, 砂川美佐, 霍間勇輝, 笘井重和, 筒井一生, 若林整, 浦岡行治, 角嶋邦之

応用物理学会春季学術講演会講演予稿集(CD-ROM) 71st 2024

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Fabrication of BiFe_0.9Co_0.1O₃ nanodot array with electron-beam-lithographed HSQ mask (2)

中山創, 吉川浩太, LEE Koomok, 角嶋邦之, 角嶋邦之, 星井拓也, 星井拓也, 金子智, 安井学, 黒内正仁, 重松圭, 重松圭, 重松圭, 東正樹, 東正樹, 東正樹

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 85th 2024

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Interface evaluation of SiC pMOSFET with charge pumping method

阿野響太郎, 星井拓也, 筒井一生, 若林整, 依田孝, 大場隆之, 角嶋邦之

応用物理学会春季学術講演会講演予稿集(CD-ROM) 71st 2024

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Observation of As_xB clusters in Si crystal by photoelectron holography

吉田桃子, 橋本由介, SUN Z., 盛喜琢也, 星井拓也, 筒井一生, 松下智裕

日本物理学会講演概要集(CD-ROM) 79 ( 1 ) 2024

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Evaluation of atomic positions of As_xB cluster in Si crystal by reverse Monte Carlo method

吉田桃子, 橋本由介, SUN Z., 盛喜琢也, 星井拓也, 筒井一生, 松下智裕

日本物理学会講演概要集(CD-ROM) 79 ( 2 ) 2024

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Raman spectroscopy measurement of thickness dependent ferroelectric Al_0.7Sc_0.3N films

時田幸村, 星井拓也, 筒井一生, 若林整, 角嶋邦之

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 84th 2023

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30-50-nm-thick WSe₂ back-channel pFETs with WO_x S/D self-aligned to top gate

梶川亮介, 川那子高暢, 宗田伊理也, 星井拓也, 角嶋邦之, 筒井一生, 若林整

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 84th 2023

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Carrier scattering mechanism of 2DEG in InAlN/AlN/GaN structures depending on AlN thickness

小森勇太, 星井拓也, 宮野清孝, 津久井雅之, 水島一郎, 水島一郎, 依田孝, 依田孝, 角嶋邦之, 若林整, 筒井一生

応用物理学会春季学術講演会講演予稿集(CD-ROM) 70th 2023

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Low frequency noise measurement of 2DEG at AlGaN/GaN interface with different contacts

上田浩輔, 片倉滉司, 星井拓也, 筒井一生, 若林整, 角嶋邦之

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 84th 2023

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Dependence of 2DEG mobility on carrier concentration in InAlN/AlN/GaN structures

Komori Yuta, Tsutsui Kazuo, Hoshii Takuya, Kakushima Kuniyuki, Wakabayashi Hitoshi, Miyano Kiyotaka, Yoda Takashi, Mizushima Ichirou, Tsukui Masayuki

JSAP Annual Meetings Extended Abstracts 2022.1 2413 - 2413 2022.2

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DOI： 10.11470/jsapmeeting.2022.1.0_2413

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Ferroelectric properties of room-temperature sputter-deposited AlScN films

TSAI Sung-Lin, Hoshii Takuya, Wakabayashi Hitoshi, Tsutsui Kazuo, Kakushima Kuniyuki

JSAP Annual Meetings Extended Abstracts 2022.1 2354 - 2354 2022.2

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DOI： 10.11470/jsapmeeting.2022.1.0_2354

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1/f noise measurement on AlGaN/GaN HEMT TLM

Katakura koshi, Hoshii Takuya, Wakabayashi Hitoshi, Tsutsui Kazuo, Kakushima Kuniyuki

JSAP Annual Meetings Extended Abstracts 2022.1 2411 - 2411 2022.2

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DOI： 10.11470/jsapmeeting.2022.1.0_2411

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Threshold voltage shift of GaN HEMT with high spontaneous polarized AlScN films

野中隆聖, 星井拓也, 若林整, 筒井一生, 角嶋邦之

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 83rd 2022

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Low Voltage Operation of CMOS Inverter Based on WSe₂ n/p FETs

川那子高暢, 松崎貴広, 梶川亮介, 宗田伊理也, 星井拓也, 角嶋邦之, 筒井一生, 若林整

電子情報通信学会技術研究報告(Web) 122 ( 84(SDM2022 24-32) ) 2022

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Electrical Characteristics of gated SiC pn diodes

阿野響太郎, 星井拓也, 若林整, 筒井一生, 依田孝, 依田孝, 角嶋邦之

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 83rd 2022

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Local structural analysis of B in As and B co-doped Si

川村聡太, 竹内走一郎, 古賀俊丞, 富田広人, 星井拓也, 筒井一生, 橋本由介, 松下智裕

日本物理学会講演概要集(CD-ROM) 77 ( 2 ) 2022

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Reliability improvement of Y:HfO₂ capacitors by rare-earth oxides capping

水谷一翔, 星井拓也, 川那子高暢, 宗田伊理也, 若林整, 筒井一生, 角嶋邦之

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 83rd 2022

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Influence of sputtering pressure on AlScN films

時田幸村, TSAI Sung-Lin, 星井拓也, 若林整, 筒井一生, 角嶋邦之

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 83rd 2022

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WSe₂ n/p FET using Aluminum-Scandium (AlSc) Alloy and Tungsten Oxide (WO_x) for Source/Drain Contact and its Application to CMOS Inverter

川那子高暢, 梶川亮介, 水谷一翔, TSAI SungLin, 宗田伊理也, 星井拓也, 角嶋邦之, 筒井一生, 若林整

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 83rd 2022

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Defect density extraction of GaN epitaxial wafer with back-gate voltage application

西田きさら, 星井拓也, 若林整, 筒井一生, 角嶋邦之

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 83rd 2022

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両面リングラフィ技術を用いた3.3kV両面ゲートIGBT (BC-IGBT)—3.3kV Back-Gate-Controlled IGBT (BC-IGBT) Using Manufacturable Double-Side Process Technology—電子デバイス/半導体電力変換合同研究会・パワーデバイス・パワーエレクトロニクスとその実装技術

更屋拓哉, 伊藤一夫, 高倉俊彦, 福井宗利, 鈴木慎一, 竹内潔, 附田正則, 佐藤克己, 末代知子, 角嶋邦之, 星井拓也, 筒井一生, 岩井洋, 小椋厚志, 齋藤渉, 西澤伸一, 大村一郎, 大橋弘通, 平本俊郎

電気学会研究会資料. SPC = The papers of technical meeting on semiconductor power converter, IEE Japan / 半導体電力変換研究会 [編] 2021 ( 144-148 ) 7 - 12 2021.10

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Fabrication of GaN FinFETs using selective area growth: Study on process to form growth windows

Ota Takashi, Sasaki Mitsutaka, Takayama Ken, Hamada Takuya, Takahashi Tokio, Ide Toshihide, Shimizu Mitsuaki, Hoshii Takuya, Kakushima Kuniyuki, Wakabayashi Hitoshi, Tsutsui Kazuo

JSAP Annual Meetings Extended Abstracts 2021.2 2733 - 2733 2021.8

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DOI： 10.11470/jsapmeeting.2021.2.0_2733

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Analysis of the origin of 2step C-V characteristics in polarization junction substrates

Onimura Kazushi, Hoshii Takuya, Matsuhashi Taihei, Okita Hiroaki, kakushima Kuniyuki, wakabayashi Hitoshi, Tsutsui Kazuo, Nakajima Akira

JSAP Annual Meetings Extended Abstracts 2021.2 2713 - 2713 2021.8

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DOI： 10.11470/jsapmeeting.2021.2.0_2713

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Effect of AlN spacer layer thickness on the carrier scattering factors in InAlN/AlN/GaN heterostructures

Komori Yuta, Kimura Yasuki, Hoshii Takuya, Miyano Kiyotaka, Tsukui Masayuki, Mizushima Ichirou, Ida Takashi, Kakushima Kuniyuki, Wakabayashi Hitoshi, Tsutsui Kazuo

JSAP Annual Meetings Extended Abstracts 2021.2 2726 - 2726 2021.8

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DOI： 10.11470/jsapmeeting.2021.2.0_2726

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Comparison of channel conduction modes on lateral GaN FinFETs

Sasaki Mitsutaka, Hoshii Takuya, Kakushima Kuniyuki, Wakabayashi Hitoshi, Tsutsui Kazuo

JSAP Annual Meetings Extended Abstracts 2021.2 2732 - 2732 2021.8

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DOI： 10.11470/jsapmeeting.2021.2.0_2732

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Performance Improvements of P-channel GaN HFETs by ALE using Nitrogen Plasma

Kimura Shonosuke, Miura Katsuyuki, Hoshii Takuya, Kakushima Kuniyuki, Wakabayashi Hitoshi, Tsutsui Kazuo

JSAP Annual Meetings Extended Abstracts 2021.2 2731 - 2731 2021.8

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Study on Widening of Drift Region of GaN FinFETs for Low On-Resistance and High Breakdown Voltage

Hisatsune Yusuke, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kazuo Tsutsui

JSAP Annual Meetings Extended Abstracts 2021.2 2734 - 2734 2021.8

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GaN FinFETs fabricated by using selective area growth

筒井一生, 濱田拓也, 高山研, KIM Sangwoo, 星井拓也, 角嶋邦之, 若林整, 高橋言緒, 井手利英, 清水三聡

電気学会研究会資料 2021 ( 24-33 ) 11 - 15 2021.3

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Demonstration of High Gain WSe₂ CMOS Inverter operating at V_dd of 0.5 V

川那子高暢, 松崎貴広, 梶川亮介, 宗田伊理也, 星井拓也, 角嶋邦之, 筒井一生, 若林整

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 82nd 3275 - 3275 2021

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DOI： 10.11470/jsapmeeting.2021.2.0_3275

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Structural analysis of dopants in Si by co-doping of As and B

竹内走一郎, 古賀峻丞, 田中晶貴, ZEXU S., 星井拓也, 筒井一生, 室隆桂之, 橋本由介, 松下智裕

日本物理学会講演概要集(CD-ROM) 76 ( 1 ) 2021

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Development of Gate Stack Process for Accumulation-mode GaN p-MOSFETs

星井拓也

スズキ財団年次報告書 2021 2021

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Optimization of Device Structure of Lateral GaN Fin FETs

Hisatsune Yusuke, Kim Sangwoo, Hoshii Takuya, Kakushima Kuniyuki, Wakabayashi Hitoshi, Tsutsui Kazuo

JSAP Annual Meetings Extended Abstracts 2020.2 1889 - 1889 2020.8

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DOI： 10.11470/jsapmeeting.2020.2.0_1889

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Fabrication of GaN FinFETs using selective area growth: Suppression of leakage

Takayama Ken, Ota Takashi, Sasaki Mitsutaka, Mukai Hayato, Hamada Takuya, Takahashi Tokio, Ide Toshihide, Shimizu Mitsuaki, Hoshii Takuya, Kakushima Kuniyuki, Wakabayashi Hitoshi, Tsutsui Kazuo

JSAP Annual Meetings Extended Abstracts 2020.2 1890 - 1890 2020.8

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Temperature dependence of carrier mobility on InAlN/(AlN)/GaN heterostructures

Kimura Yasuki, Hoshii Takuya, Miyano Kiyotaka, Tsukui Masayuki, Mizushima Ichiro, Yoda Takashi, Kakushima Kuniyuki, Wakabayashi Hitoshi, Tsutsui Kazuo

JSAP Annual Meetings Extended Abstracts 2020.2 1909 - 1909 2020.8

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DOI： 10.11470/jsapmeeting.2020.2.0_1909

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Control of As clusters in Si by co-doping of As and B

Tsutsui Kazuo, Matsuhashi Taihei, Hoshii Takuya, Kakushima Kuniyuki, Wakabayashi Hitoshi, Nagayama Tsutomu, Higuchi Takahiro, Kato Shinichi, Tanimura Hideaki, Muro Takayuki, Matsushita Tomohiro, Morikawa Yoshitada

JSAP Annual Meetings Extended Abstracts 2020.2 1827 - 1827 2020.8

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DOI： 10.11470/jsapmeeting.2020.2.0_1827

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Carrier transport characteristics depending on AlN spacer layer thickness on InAlN/GaN heterostructure

Kimura Yasuki, Hoshii Takuya, Miyano Kiyotaka, Nunoue Shinya, Nago Hajime, Mizushima Ichiro, Yoda Takashi, Kakushima Kuniyuki, Wakabayashi Hitoshi, Tsutsui Kazuo

JSAP Annual Meetings Extended Abstracts 2020.1 2842 - 2842 2020.2

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DOI： 10.11470/jsapmeeting.2020.1.0_2842

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Three-Dimensional Device Simulation of Si IGBTs-Investigation of physical models and comparisons with measurements-

執行直之, 渡辺正裕, 角嶋邦之, 星井拓也, 古川和由, 中島昭, 佐藤克己, 末代知子, 更屋拓哉, 高倉俊彦, 伊藤一夫, 福井宗利, 鈴木慎一, 竹内潔, 宗田伊里也, 若林整, 西澤伸一, 筒井一生, 平本俊郎, 大橋弘通, 岩井洋

電子情報通信学会技術研究報告(Web) 120 ( 239(SDM2020 22-34) ) 2020

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Analytical evaluation of 2DEG depletion voltage in polarization junction substrate

松橋泰平, 星井拓也, 沖田寛昌, 中島昭, 角嶋邦之, 若林整, 筒井一生

応用物理学会春季学術講演会講演予稿集(CD-ROM) 67th 2815 - 2815 2020

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DOI： 10.11470/jsapmeeting.2020.1.0_2815

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5Vゲート駆動による3300VスケーリングIGBTの動作実証—3300V Scaled IGBTs Driven by 5V Gate Voltage—電子デバイス半導体電力変換合同研究会・パワーデバイス・パワーエレクトロニクスとその実装技術

更屋拓哉, 伊藤一夫, 高倉俊彦, 福井宗利, 鈴木慎一, 竹内潔, 附田正則, 沼沢陽一郎, 佐藤克己, 末代知子, 齋藤渉, 角嶋邦之, 星井拓也, 古川和由, 渡辺正裕, 執行直之, 若林整, 筒井一生, 岩井洋, 小椋厚志, 西澤伸一, 大村一郎, 大橋弘通, 平本俊郎

電気学会研究会資料. SPC = The papers of technical meeting on semiconductor power converter, IEE Japan / 半導体電力変換研究会 [編] 2019 ( 161-172 ) 61 - 65 2019.11

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招待講演トレンチゲート型Si-IGBTの3次元精密TCADシミュレーション—Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs—シリコン材料・デバイス

渡辺正裕, 執行直之, 星井拓也, 古川和由, 角嶋邦之, 佐藤克己, 末代知子, 更屋拓哉, 高倉俊彦, 伊藤一夫, 福井宗利, 鈴木慎一, 竹内潔, 宗田伊里也, 若林整, 中島昭, 西澤伸一, 筒井一生, 平本俊郎, 大橋弘通, 岩井洋

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 119 ( 273 ) 45 - 48 2019.11

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Evaluation of trap density in GaN by transient current measurement upon step voltage application

Nishida Hirofumi, Hoshii Takuya, Kataoka Hiroaki, Tsutsui Kazuo, Kakushima Kuniyuki, Wakabayashi Hitoshi

JSAP Annual Meetings Extended Abstracts 2019.2 3174 - 3174 2019.9

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DOI： 10.11470/jsapmeeting.2019.2.0_3174

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High-Hall effect mobility of layered ZrS₂ film using sputtering and sulfur vapor annealing

Hamada Masaya, Matsuura Kentaro, Muneta Iriya, Hoshii Takuya, Kakushima Kuniyuki, Kazuo Tsutsui, Wakabayashi Hitoshi

JSAP Annual Meetings Extended Abstracts 2019.2 3901 - 3901 2019.9

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Accumulation-Capacitance Characteristics of Metal-Top-Gate/High-k/Sputtered-MoS₂ with Positive Threshold Voltage

Tanigawa Haruki, Matsuura Kentaro, Muneta Iriya, Hoshii Takuya, Kakushima Kuniyuki, Tsutsui Kazuo, Wakabayashi Hitoshi

JSAP Annual Meetings Extended Abstracts 2019.2 3889 - 3889 2019.9

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Fabrication of GaN FinFETs using selective area growth method

Mukai Hayato, Takayama Ken, Hamada Takuya, Takahashi Tokio, Ide Toshihide, Shimizu Mitsuaki, Hoshii Takuya, Kakushima Kuniyuki, Wakabayashi Hitoshi, Iwai Hiroshi, Tsutsui Kazuo

JSAP Annual Meetings Extended Abstracts 2019.2 3243 - 3243 2019.9

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Study of low resistivity regions generated on the process of selective area growth of GaN Fin structures

Takayama Ken, Mukai Hayato, Hamada Takuya, Takahashi Tokio, Ide Toshihide, Shimizu Mitsuaki, Hoshii Takuya, Kakushima Kuniyuki, Wakabayashi Hitoshi, Iwai Hiroshi, Tsutsui Kazuo

JSAP Annual Meetings Extended Abstracts 2019.2 3242 - 3242 2019.9

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Electrical Characteristics of MOS Capacitors with Y₂O₃/SiO₂ Dielectric Stack

Song Jinhan, Ohta Atsuhiro, Hoshii Takuya, Wakabayashi Hitoshi, Tsutsui Kazuo, Kakushima Kuniyuki

JSAP Annual Meetings Extended Abstracts 2019.2 3040 - 3040 2019.9

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Dependence of AlGaN/GaN contact-resistance reduction effect on the partially-thin AlGaN area design

Kimura Yasuki, Hisanaga Shinnosuke, Hoshii Takuya, Kakushima Kuniyuki, Wakabayashi Hitoshi, Iwai Hiroshi, Tsutsui Kazuo

JSAP Annual Meetings Extended Abstracts 2019.2 3210 - 3210 2019.9

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Atomic Layer Deposition of Yttrium Oxide from Y(iPrCp)3 Precursor and Oxygen with Argon boost

Lin YuWei, Song Jinhan, Hoshii Takuya, Wakabayashi Hitoshi, Tsutsui Kazuo, Kakushima Kuniyuki

JSAP Annual Meetings Extended Abstracts 2019.2 3039 - 3039 2019.9

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Formation of AlScN film by sputtering

Tsai SungLin, Kusafuka Kazuki, Hoshii Takuya, Wakabayashi Hitoshi, Tsutsui Kazuo, Kakushima Kuniyuki

JSAP Annual Meetings Extended Abstracts 2019.2 3000 - 3000 2019.9

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Investigation of MgF₂ buffer for GaN on Si (111) substrate

Kanbayashi Fumiya, Hoshii Takuya, Kakushima Kuniyuki, Wakabayashi Hitoshi, Tsutsui Kazuo

JSAP Annual Meetings Extended Abstracts 2019.2 3541 - 3541 2019.9

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Leakage current of sputter fabricated AlScN film

Kusafuka Kazuki, Tsai Sunglin, Hoshii Takuya, Wakabayashi Hitoshi, Tsutsui Kazuo, Kakushima Kuniyuki

JSAP Annual Meetings Extended Abstracts 2019.2 3024 - 3024 2019.9

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Formation of Yttrium Silicate Thin Layer by Atomic Layer Deposition

Ohta Atsuhiro, Song Jinhan, Hoshii Takuya, Wakabayashi Hitoshi, Tsutsui Kazuo, Kakushima Kuniyuki

JSAP Annual Meetings Extended Abstracts 2019.2 3041 - 3041 2019.9

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X-ray detector using 4H-SiC epitaxial layer

Miyata Atsuki, Saito Daiki, Hoshii Takuya, Wakabayashi Hitoshi, Tsutsui Kazuo, Kakushima Kuniyuki

JSAP Annual Meetings Extended Abstracts 2019.2 484 - 484 2019.9

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Sheet-Resistance Reduction of Sputtered-MoS₂ Film by SF₆Plasma Treatment

Horiguchi Taiga, Hamada Takuya, Tatsumi Tetsuya, Tomiya Shigetaka, Hoshii Takuya, Kakushima Kuniyuki, Tsutsui Kazuo, Wakabayashi Hitoshi

JSAP Annual Meetings Extended Abstracts 2019.2 3887 - 3887 2019.9

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DOI： 10.11470/jsapmeeting.2019.2.0_3887

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Sheet resistance reduction of Sputtered MoS₂ Film by Cl₂ Plasma Treatment

Hamada Takuya, Horiguchi Taiga, Tatsumi Tetsuya, Tomiya Shigetaka, Hamada Masaya, Hoshii Takuya, Kakushima Kuniyuki, Tsutsui Kazuo, Wakabayashi Hitoshi

JSAP Annual Meetings Extended Abstracts 2019.2 3888 - 3888 2019.9

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依頼講演 5Vゲート駆動による3300VスケーリングIGBTのスイッチング動作—3300V Scaled IGBT Switched by 5V Gate Drive—情報センシング

平本俊郎, 更屋拓哉, 伊藤一夫, 高倉俊彦, 福井宗利, 鈴木慎一, 竹内潔, 附田正則, 沼沢陽一郎, 佐藤克己, 末代知子, 齋藤渉, 角嶋邦之, 星井拓也, 古川和由, 渡辺正裕, 執行直之, 若林整, 筒井一生, 岩井洋, 小椋厚志, 西澤伸一, 大村一郎, 大橋弘通

映像情報メディア学会技術報告 = ITE technical report 43 ( 25 ) 31 - 34 2019.8

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3300V Scaled IGBT Switched by 5V Gate Drive

平本俊郎, 更屋拓哉, 伊藤一夫, 高倉俊彦, 福井宗利, 鈴木慎一, 竹内潔, 附田正則, 沼沢陽一郎, 佐藤克己, 末代知子, 齋藤渉, 角嶋邦之, 星井拓也, 古川和由, 渡辺正裕, 執行直之, 若林整, 筒井一生, 岩井洋, 小椋厚志, 西澤伸一, 大村一郎, 大橋弘通

電子情報通信学会技術研究報告 119 ( 161 ) 31 - 34 2019.8

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Electrical properties of selectively grown GaN channels for FinFETs

Hamada Takuya, Mukai Hayato, Takahashi Tokio, Ide Toshihide, Shimizu Mitsuaki, Hoshii Takuya, Kuniyuki Kakushima, Hitoshi Wakabayashi, Hiroshi Iwai, Kazuo Tsutsui

JSAP Annual Meetings Extended Abstracts 2019.1 2877 - 2877 2019.2

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招待講演 5Vゲート駆動1200V級スケーリングIGBTの動作実証とスイッチング損失の低減—シリコン材料・デバイス

更屋拓哉, 伊藤一夫, 高倉俊彦, 福井宗利, 鈴木慎一, 竹内潔, 附田正則, 沼沢陽一郎, 佐藤克己, 末代知子, 齋藤渉, 角嶋邦之, 星井拓也, 古川和由, 渡辺正裕, 執行直之, 筒井一生, 岩井洋, 小椋厚志, 西澤伸一, 大村一郎, 大橋弘通, 平本俊郎

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 118 ( 429 ) 39 - 44 2019.1

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Effect of AlGaN/GaN growth using triethylgallium on 2DEG-side interfacial charge

Okita Hiromasa, Hoshii Takuya, Matsuhashi Taihei, Sanyal Indraneel, Chen Yu-Chih, Ju Ying-Hao, Nakajima Akira, Nishizawa Shinichi, Ohashi Hiromichi, Kakushima Kuniyuki, Wakabayashi Hitoshi, Chyi Jen-Inn, Tsutsui Kazuo

JSAP Annual Meetings Extended Abstracts 80th 3246 - 3246 2019

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Observation of three dimensional atomic arrangements of active and inactive impurities heavy doped in silicon by using photoelectron holography method

筒井一生, 松下智裕, 名取鼓太郎, 小川達博, 室隆桂之, 森川良忠, 星井拓也, 角嶋邦之, 若林整, 林好一, 松井文彦, 木下豊彦

電子情報通信学会技術研究報告 119 ( 96(SDM2019 25-35) ) 23 - 27 2019

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光電子分光ホログラフィーによるAsドープSi中のドーパント複数サイトの原子配列イメージング

筒井一生, 松下智裕, 名取鼓太郎, 室隆桂之, 森川良忠, 星井拓也, 角嶋邦之, 若林整, 林好一, 松井文彦, 木下豊彦

応用物理学会春季学術講演会講演予稿集(CD-ROM) 66th 2019

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Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs

渡辺正裕, 執行直之, 星井拓也, 古川和由, 角嶋邦之, 佐藤克己, 末代知子, 更屋拓哉, 高倉俊彦, 伊藤一夫, 福井宗利, 鈴木慎一, 竹内潔, 宗田伊里也, 若林整, 中島昭, 西澤伸一, 筒井一生, 平本俊郎, 大橋弘通, 岩井洋

電子情報通信学会技術研究報告 119 ( 273(SDM2019 68-79) ) 2019

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3D Atomic Imaging of Impurities Doped in Semiconductors Using Photoelectron Holography

Tsutsui Kazuo, Matsushita Tomohiro, Natori Kotaro, Ogawa Tatsuhiro, Muro Takayuki, Morikawa Yshitada, Hoshii Takuya, Kakushima Kuniyuki, Wakabayashi Hitoshi, Hayashi Kouichi, Matsui Fumihiko, Kinoshita Toyohiko

JSAP Annual Meetings Extended Abstracts 66th 129 - 129 2019

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Effect of GaN/AlGaN growth using triethylgallium on 2DHG-side interfacial charge

Matsuhashi Taihei, Takuya Hoshii, Hiromasa Okita, Sanyal Indraneel, Chen Yu-Chih, Ju Ying-Hao, Akira Nakajima, Kuniyuki Kakushima, Hitoshi Wakabayashi, Chyi Jen-Inn, Kazuo Tsutsui

JSAP Annual Meetings Extended Abstracts 80th 3247 - 3247 2019

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DOI： 10.11470/jsapmeeting.2019.2.0_3247

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Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs

Watanabe, Masahiro, Shigyo, Naoyuki, Hoshii, Takuya, Furukawa, Kazuyoshi, Kakushima, Kuniyuki, Satoh, Katsumi, Matsudai, Tomoko, Saraya, Takuya, Takakura, Toshihiro, Itou, Kazuo, Fukui, Munetoshi, Suzuki, Shinichi, Takeuchi, Kiyoshi, Muneta, Iriya, Wakabayashi, Hitoshi, Nakajima, Akira, Nishizawa, Shin-ichi, Tsutsui, Kazuo, Hiramoto, Toshiro, Ohashi, Hiromichi, Iwai, Hiroshi

2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) 119 ( 273(SDM2019 68-79) ) 311 - 314 2019

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3300V Scaled IGBTs Driven by 5V Gate Voltage

Saraya, Takuya, Itou, Kazuo, Takakura, Toshihiko, Fukui, Munetoshi, Suzuki, Shinichi, Takeuchi, Kiyoshi, Tsukuda, Masanori, Numasawa, Yohichiroh, Satoh, Katsumi, Matsudai, Tomoko, Saito, Wataru, Kakushima, Kuniyuki, Hoshii, Takuya, Furukawa, Kazuyoshi, Watanabe, Masahiro, Shigyo, Naoyuki, Wakabayashi, Hitoshi, Tsutsui, Kazuo, Iwai, Hiroshi, Ogura, Atsushi, Nishizawa, Shin-ichi, Omura, Ichiro, Ohashi, Hiromichi, Hiramoto, Toshiro

2019 31ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) ( EDD-19-075-086/SPC-19-161-172 ) 43 - 46 2019

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窒素プラズマを用いたGaN低ダメージエッチングの検討

三浦克之, 星井拓也, 角嶋邦之, 若林整, 筒井一生

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 80th 2019

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Effects of surface treatment using TMAH on p-GaN/metal contact characteristics

Shimizu Takashi, Hoshii Takuya, Kakushima Kuniyuki, Wakabayashi Hitoshi, Iwai Hiroshi, Tsutsui Kazuo

JSAP Annual Meetings Extended Abstracts 2018.2 3056 - 3056 2018.9

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DOI： 10.11470/jsapmeeting.2018.2.0_3056

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Charge and discharge characteristics of MIM capacitors with CeO_x layer

Sasa Kohei, Hisatsune Kazuya, Hoshii Takuya, Muneta Iriya, Wakabayashi Hitoshi, Tsutsui Kazuo, Kakushima Kuniyuki

JSAP Annual Meetings Extended Abstracts 2018.2 2866 - 2866 2018.9

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Size effects of dot-array planar patterns on the contact resistance reduction technique for AlGaN/GaN HEMTs by introducing uneven AlGaN layer

Hisanaga Shinnosuke, Takumi Watanabe, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, You Iwai, Kazuo Tutui

JSAP Annual Meetings Extended Abstracts 2018.2 3057 - 3057 2018.9

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DOI： 10.11470/jsapmeeting.2018.2.0_3057

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Capacitance-voltage characteristics of HfO₂ MIM capacitors with Si incorporation

Iwatsuka Haruki, Hosii Takuya, Muneta Iriya, Wakabayashi Hitoshi, Tsutsui Kazuo, Kakushima Kuniyuki

JSAP Annual Meetings Extended Abstracts 2018.2 2865 - 2865 2018.9

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Transient capacitance of a MIM capacitor with CeO_xlayer

Hisatsune Kazuya, Hoshii Takuya, Muneta Iriya, Wakabayashi Hitoshi, Tsutsui Kazuo, Kakushima Kuniyuki

JSAP Annual Meetings Extended Abstracts 2018.2 1871 - 1871 2018.9

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Removal of Residual Sulfur Deposited during Sulfurization Process of Sputtered-MoS₂ Film through HfO₂ Film

Tanigawa Haruki, Matsuura Kentaro, Hamada Masaya, Sakamoto Takuro, Muneta Iriya, Hoshii Takuya, Kakushima Kuniyuki, Tsutsui Kazuo, Wakabayashi Hitoshi

JSAP Annual Meetings Extended Abstracts 2018.2 3719 - 3719 2018.9

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Analyses of As doped in Si activated and deactivated by flash lamp annealing and post annealing using soft X-ray photoelectron spectroscopy

Ogawa Tatsuhiro, Natori Kotaro, Hoshii Takuya, Nakatake Masashi, Watanabe Yoshio, Nagayama Tutomu, Higuchi Takahiro, Kato Shinichi, Tanimura Hideaki, Kakushima Kuniyuki, Wakabayashi Hitoshi, Tsutsui Kazuo

JSAP Annual Meetings Extended Abstracts 2018.2 2897 - 2897 2018.9

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DOI： 10.11470/jsapmeeting.2018.2.0_2897

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Fundamental study on reducing on-resistance by introducing strain into silicon vertical power device

Inoue Takeya, Hoshii Takuya, Kakushima Kuniyuki, Wakabayashi Hitoshi, Iwai Hiroshi, Tsutui Kazuo

JSAP Annual Meetings Extended Abstracts 2018.2 3078 - 3078 2018.9

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Influence of hole lifetime of n-SiC epitaxial layer on pn diode characteristics

Sasaki Kyomin, Hoshii Takuya, Muneta Iriya, Wakabayashi Hitoshi, Tsutsui Kazuo, Kakushima Kuniyuki

JSAP Annual Meetings Extended Abstracts 2018.2 2784 - 2784 2018.9

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Evaluation of strain in InAs thin films grown on Si (111) by Raman spectroscopy

Kanbayashi Fumiya, Hoshii Takuya, Kakushima Kuniyuki, Wakabayashi Hitoshi, Tsutsui Kazuo

JSAP Annual Meetings Extended Abstracts 2018.2 3227 - 3227 2018.9

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DOI： 10.11470/jsapmeeting.2018.2.0_3227

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Analyses of 3D atomic arrangements of impurity atoms doped in silicon by spectro-photoelectron holography technique

Kazuo Tsutsui, Tomohiro Matsushita, Takayuki Muro, Yoshitada Morikawa, Kotaro Natori, Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi, Kouichi Hayashi, Fumihiko Matsui, Toyohiko Kinoshita

2018 18th International Workshop on Junction Technology, IWJT 2018 2018-January 1 - 6 2018.4

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分極接合基板のAlGaN/GaN界面における界面準位

星井拓也, 高山留美, 鶴田脩真, 中島昭, 西澤伸一, 大橋弘通, 角嶋邦之, 若林整, 筒井一生

応用物理学会春季学術講演会講演予稿集(CD-ROM) 65th ROMBUNNO.19p‐C302‐17 - 3340 2018.3

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立体チャネルトランジスタ応用に向けた選択成長GaNの貫通転位の低減

濱田拓也, 黒岩宏紀, 高橋言緒, 井手利英, 清水三聡, 星井拓也, 角嶋邦之, 若林整, 岩井洋, 筒井一生

応用物理学会春季学術講演会講演予稿集(CD-ROM) 65th ROMBUNNO.19p‐C302‐18 - 3341 2018.3

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DOI： 10.11470/jsapmeeting.2018.1.0_3341

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Effect of Interface State at AlGaN/GaN Interfaces on I-V characteristics of GaN p-MOSFETs on Polarization-Junction Substrates

Tsuruta Shuma, Hoshii Takuya, Nakajima Akira, Nishizawa Shin-ichi, Ohashi Hiromichi, Kakushima Kuniyuki, Wakabayashi Hitoshi, Tsutsui Kazuo

JSAP Annual Meetings Extended Abstracts 79th 3070 - 3070 2018

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酸化セリウムを用いたMIMキャパシタの過渡応答特性

久恒和也, 佐々康平, 星井拓也, 宗田伊理也, 若林整, 筒井一生, 角嶋邦之

半導体・集積回路技術シンポジウム(CD-ROM) 82nd 2018

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立体チャネルトランジスタ応用に向けた選択成長GaNの異方性エッチング

向井勇人, 濱田拓也, 高橋言緒, 井手利英, 清水三聡, 星井拓也, 角嶋邦之, 若林整, 岩井洋, 筒井一生

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 79th 2018

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少数キャリアライフタイムによる半導体プロセスの評価手法の提案

角嶋邦之, 星井拓也, 渡辺正裕, 執行直之, 古川和由, 更屋拓哉, 高倉俊彦, 伊藤一夫, 福井宗利, 鈴木慎一, 竹内潔, 宗田伊理也, 若林整, 沼沢陽一郎, 小椋厚志, 西澤伸一, 筒井一生, 平本俊郎, 大橋弘通, 岩井洋

電気学会電子・情報・システム部門大会講演論文集(CD-ROM) 2018 2018

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Experimental Verification of a 3D Scaling Principle for Low V[CEsat] IGBTs

筒井一生, 角嶋邦之, 星井拓也, 中島昭, 西澤伸一, 若林整, 宗田伊理也, 佐藤克己, 末代知子, 齋藤渉, 更屋拓哉, 伊藤一夫, 福井宗利, 鈴木慎一, 小林正治, 高倉俊彦, 平本俊郎, 小椋厚志, 沼沢陽一郎, 大村一郎, 大橋弘通, 岩井洋

電気学会研究会資料. SPC = The papers of technical meeting on semiconductor power converter, IEE Japan 2017 ( 173 ) 1 - 6 2017.11

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Experimental Verification of a 3D Scaling Principle for Low V[CEsat] IGBTs

筒井一生, 角嶋邦之, 星井拓也, 中島昭, 西澤伸一, 若林整, 宗田伊理也, 佐藤克己, 末代知子, 齋藤渉, 更屋拓哉, 伊藤一夫, 福井宗利, 鈴木慎一, 小林正治, 高倉俊彦, 平本俊郎, 小椋厚志, 沼沢陽一郎, 大村一郎, 大橋弘通, 岩井洋

電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan 2017 ( 74 ) 1 - 6 2017.11

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Experimental Verification of a 3D Scaling Principle for Low VCEsat IGBTs

筒井一生, 角嶋邦之, 星井拓也, 中島昭, 西澤伸一, 若林整, 宗田伊理也, 佐藤克己, 末代知子, 齋藤渉, 更屋拓哉, 伊藤一夫, 福井宗利, 鈴木慎一, 小林正治, 高倉俊彦, 平本俊郎, 小椋厚志, 沼沢陽一郎, 大村一郎, 大橋弘通, 岩井洋

電気学会電子デバイス研究会資料 EDD-17 ( 74-86 ) 1‐6 2017.11

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分極接合基板上PチャネルGaN MOS構造の特性評価

高山留美, 星井拓也, 中島昭, 西澤伸一, 大橋弘通, 角嶋邦之, 若林整, 筒井一生

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th ROMBUNNO.6p‐PA8‐19 - 3066 2017.8

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Si結晶中にドープされたAsの異なる原子配列構造と深さ分布

小川達博, 名取鼓太郎, 星井拓也, 仲武昌史, 渡辺義夫, 角嶋邦之, 若林整, 筒井一生

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th ROMBUNNO.8a‐C21‐1 - 2928 2017.8

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TiNを用いたGa₂O₃ショットキーバリアダイオードの電気特性

金子喬, 宗田伊理也, 星井拓也, 若林整, 筒井一生, 岩井洋, 角嶋邦之

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th ROMBUNNO.5a‐C17‐2 - 3014 2017.8

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p型GaNにおけるSiNキャップアニールのコンタクト特性への影響

清水孝, 星井拓也, 角嶋邦之, 若林整, 岩井洋, 筒井一生

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th ROMBUNNO.7p‐S22‐2 - 3091 2017.8

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GaNエピウエハ内部の欠陥密度抽出法の提案

片岡寛明, 星井拓也, 宗田伊理也, 若林整, 筒井一生, 岩井洋, 角嶋邦之, 山本大貴

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th ROMBUNNO.7a‐S22‐4 - 3082 2017.8

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酸化セリウムを用いたMIMキャパシタの電気特性評価

高久淑考, 宗田伊理也, 星井拓也, 若林整, 筒井一生, 岩井洋, 角嶋邦之

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th ROMBUNNO.8p‐C18‐6 - 2986 2017.8

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Mo₂C電極を用いたSiCショットキーバリアダイオードの通電試験

齋藤大樹, 宗田伊理也, 星井拓也, 若林整, 筒井一生, 岩井洋, 角嶋邦之

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th ROMBUNNO.6a‐A201‐7 - 3488 2017.8

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立体チャネルトランジスタ応用に向けた選択成長GaNの形状制御

黒岩宏紀, 濱田拓也, 高橋言緒, 井手利英, 清水三聡, 星井拓也, 角嶋邦之, 若林整, 岩井洋, 筒井一生

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th ROMBUNNO.5p‐A301‐7 - 3331 2017.8

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AlGaN/GaN HEMT構造におけるドット形凹凸AlGaN層形成によるコンタクト抵抗低減の検討

渡部拓巳, 久永真之佑, 星井拓也, 角嶋邦之, 若林整, 岩井洋, 筒井一生

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 78th ROMBUNNO.6p‐PA8‐18 - 3065 2017.8

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La₂O₃を積層したCeO_x/SiO₂の抵抗変化メモリ動作

水谷一翔, 宗田伊理也, 星井拓也, 若林整, 筒井一生, 岩井洋, 角嶋邦之

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Formation of Mo<inf>2</inf>C electrodes using stacked sputtering process for thermally stable SiC Schottky barrier diodes

K. Kakushima, T. Suzuki, T. Hoshii, I. Muneta, H. Wakabayashi, K. Tsutsui, H. Iwai, H. Nohira

17th International Workshop on Junction Technology, IWJT 2017 81 - 82 2017.6

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Capacitance Analyses of p-ch GaN MOS Structure on Polarization-Junction Substrate

高山留美, 星井拓也, 中島昭, 西澤伸一, 大橋弘通, 角嶋邦之, 若林整, 筒井一生

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報 117 ( 101 ) 31 - 34 2017.6

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分極接合基板上pチャネルGaN MOS構造の容量特性についての検討

高山留美, 星井拓也, 中島昭, 西澤伸一, 大橋弘通, 角嶋邦之, 若林整, 筒井一生

電子情報通信学会技術研究報告 117 ( 101(SDM2017 21-30) ) 31‐34 2017.6

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p型GaNに対するTi系オーミックコンタクトの低温形成

高橋昌靖, 星井拓也, 角嶋邦之, 若林整, 岩井洋, 筒井一生

応用物理学会春季学術講演会講演予稿集(CD-ROM) 64th ROMBUNNO.16a‐P4‐7 - 3149 2017.3

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SiにドープされたAsの光電子ホログラフィー評価と電気的活性化との関係

名取鼓太郎, 筒井一生, 松下智裕, 室隆桂之, 星井拓也, 角嶋邦之, 若林整, 林好一, 松井文彦, 森川良忠, 下村勝, 木下豊彦

応用物理学会春季学術講演会講演予稿集(CD-ROM) 64th ROMBUNNO.14p‐P3‐2 - 2948 2017.3

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スパッタリング法で堆積したMoS₂薄膜へのコンタクト抵抗と熱処理依存性

外山真矢人, 大橋匠, 松浦賢太朗, 清水淳一, 宗田伊理也, 星井拓也, 角嶋邦之, 筒井一生, 若林整

応用物理学会春季学術講演会講演予稿集(CD-ROM) 64th ROMBUNNO.16p‐412‐19 2017.3

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横型Siナノウォール太陽電池の発電特性に関する検討

龍口傑, 星井拓也, 宗田伊理也, 若林整, 筒井一生, 岩井洋, 角嶋邦之

応用物理学会春季学術講演会講演予稿集(CD-ROM) 64th ROMBUNNO.16a‐211‐5 - 3703 2017.3

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DOI： 10.11470/jsapmeeting.2017.1.0_3703

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Mo₂C電極を用いたSiCショットキーバリアダイオードのTEM解析

齋藤大樹, 宗田伊理也, 星井拓也, 若林整, 筒井一生, 岩井洋, 角嶋邦之

半導体・集積回路技術シンポジウム(CD-ROM) 81st ROMBUNNO.P8 2017

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立体チャネルトランジスタに向けたGaNの選択成長

黒岩宏紀, 濱田拓也, 高橋言緒, 井手利英, 清水三聡, 中島昭, 星井拓也, 角嶋邦之, 若林整, 岩井洋, 筒井一生

半導体・集積回路技術シンポジウム(CD-ROM) 81st ROMBUNNO.P10 2017

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ショットキーバリアダイオードを用いたβ‐Ga₂O₃のドナー濃度の抽出

金子喬, 宗田伊理也, 星井拓也, 若林整, 筒井一生, 岩井洋, 角嶋邦之

半導体・集積回路技術シンポジウム(CD-ROM) 81st ROMBUNNO.P11 2017

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P‐GaNへのオーミックコンタクト形成における水素含有雰囲気の影響

高橋昌靖, 筒井一生, 星井拓也, 角嶋邦之, 若林整, 岩井洋

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 77th ROMBUNNO.14a‐P6‐5 - 2844 2016.9

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SiにドープされたAsの光電子ホログラフィーによる評価

名取鼓太郎, 筒井一生, 松下智裕, 室隆桂之, 木下豊彦, 星井拓也, 角嶋邦之, 若林整, 松井文彦, 下村勝

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 77th ROMBUNNO.16a‐B10‐3 - 2751 2016.9

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DOI： 10.11470/jsapmeeting.2016.2.0_2751

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AlGaN/GaN HEMT構造における凹凸AlGaN層形成によるコンタクト抵抗低減効果の解析

渡部拓巳, 星井拓也, 武井優典, 下田智裕, 筒井一生, 齋藤渉, 角嶋邦之, 若林整, 岩井洋

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 77th ROMBUNNO.16p‐B1‐11 - 2896 2016.9

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DOI： 10.11470/jsapmeeting.2016.2.0_2896

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分極接合基板上pチャネルGaN MOS構造のインピーダンス解析

高山留美, 星井拓也, 中島昭, 西澤伸一, 大橋弘通, 角嶋邦之, 若林整, 筒井一生

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 77th ROMBUNNO.14a‐P6‐20 - 2859 2016.9

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DOI： 10.11470/jsapmeeting.2016.2.0_2859

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超高効率多接合太陽電池作製に向けた表面活性化接合界面の評価

山下大之, 渡辺健太郎, 藤野真久, 星井拓也, 星井拓也, 杉山正和, 須賀唯知, 岡田至崇, 岡田至崇, 中野義昭

応用物理学会春季学術講演会講演予稿集(CD-ROM) 63rd ROMBUNNO.20P-S011-6 - 3274 2016.3

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DOI： 10.11470/jsapmeeting.2016.1.0_3274

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Siドープ量子ドット太陽電池の集光特性評価

内藤駿弥, 宮下直也, 下村北斗, 下村北斗, 玉置亮, 星井拓也, 岡田至崇

応用物理学会春季学術講演会講演予稿集(CD-ROM) 62nd ROMBUNNO.13A-A26-5 - 3179 2015.2

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Effect of light concentration on Si doped quantum dot solar cells

Shunya Naitoh, Naoya Miyashita, Kasidit Toprasertpong, Ryo Tamaki, Takuya Hoshii, Masakazu Sugiyama, Yoshitaka Okada

Proc. 25nd European Photovoltaic Solar Energy Conference pp.245 - 248 2015

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DOI： 10.4229/EUPVSEC20152015-1BV.7.39

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単層InAs量子ドットの光刺激応答の電気的評価

星井拓也, 岡田至崇

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 75th ROMBUNNO.18P-A27-12 - 2877 2014.9

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量子ドット太陽電池におけるドットへのSiドーピングの影響

内藤駿弥, TOPRASERTPONG Kasidit, 星井拓也, 杉山正和, 岡田至崇

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 75th ROMBUNNO.17P-A28-6 - 3030 2014.9

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溶液プロセスでのコロイド量子ドット埋め込み構造の作製

大澤惇, 星井拓也, WANG Haibin, 久保貴哉, 岡田至崇

応用物理学会秋季学術講演会講演予稿集(CD-ROM) 75th ROMBUNNO.17P-A1-6 - 2451 2014.9

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DOI： 10.11470/jsapmeeting.2014.2.0_2451

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単層InAs量子ドットの準位密度分布評価

星井拓也, 岡田至崇

応用物理学会春季学術講演会講演予稿集(CD-ROM) 61st ROMBUNNO.17P-E11-2 - 3244 2014.3

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Impact of Fermi Level Pinning Due to Interface Traps Inside the Conduction Band on the Inversion-Layer Mobility in InxGa1-xAs Metal-Oxide-Semiconductor Field Effect Transistors

Noriyuki Taoka, Masafumi Yokoyama, Sang Hyeon Kim, Rena Suzuki, Sunghoon Lee, Ryo Iida, Takuya Hoshii, Wipakorn Jevasuwan, Tatsuro Maeda, Tetsuji Yasuda, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 13 ( 4 ) 456 - 462 2013.12

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DOI： 10.1109/TDMR.2013.2289330

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Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

Noriyuki Taoka, Masafumi Yokoyama, Sang Hyeon Kim, Rena Suzuki, Sunghoon Lee, Ryo Iida, Takuya Hoshii, Wipakorn Jevasuwan, Tatsuro Maeda, Tetsuji Yasuda, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi

APPLIED PHYSICS LETTERS 103 ( 14 ) 143509-143509-4 2013.9

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DOI： 10.1063/1.4824474

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バイオテンプレート極限加工による直径制御GaAsナノディスクの作製とその発光特性

田村洋典, 五十嵐誠, THOMAS C, FAUZI M. Erman, HU W, 肥後昭男, 塚本里加子, 海津利行, 星井拓也, 木場隆之, 山下一郎, 岡田至崇, 村山明宏, 寒川誠二

応用物理学会春季学術講演会講演予稿集(CD-ROM) 60th ROMBUNNO.30A-G20-7 - 2856 2013.3

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Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation Reviewed

Takuya Hoshii, Sunghoon Lee, Rena Suzuki, Noriyuki Taoka, Masafumi Yokoyama, Hishashi Yamada, Masahiko Hata, Tetsuji Yasuda, Mitsuru Takenaka, Shinichi Takagi

JOURNAL OF APPLIED PHYSICS 112 ( 7 ) 073702-073702-8 2012.10

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Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties

Rena Suzuki, Noriyuki Taoka, Masafumi Yokoyama, Sang-Hyeon Kim, Takuya Hoshii, Tatsuro Maeda, Tetsuji Yasuda, Osamu Ichikawa, Noboru Fukuhara, Masahiko Hata, Mitsuru Takenaka, Shinichi Takagi

JOURNAL OF APPLIED PHYSICS 112 ( 8 ) 084103-084103-5 2012.10

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バイオテンプレート極限加工によるGaAsナノディスクの作製と発光特性

田村洋典, 五十嵐誠, THOMAS C, FAUZI M. Erman, HU W, 塚本里加子, 海津利行, 星井拓也, 木場隆之, 山下一郎, 岡田至崇, 村山明宏, 寒川誠二

応用物理学会学術講演会講演予稿集(CD-ROM) 73rd ROMBUNNO.11A-F1-6 - 2899 2012.8

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単層InAs/GaAs量子ドット構造のDLTS評価

中野廣一, 海津利行, 星井拓也, 岡田至崇

応用物理学会学術講演会講演予稿集(CD-ROM) 73rd ROMBUNNO.11P-J-14 - 3187 2012.8

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Controlling Anion Composition at Metal-Insulator-Semiconductor Interfaces on III-V Channels by Plasma Processing

Wipakorn Jevasuwan, Yuji Urabe, Tatsuro Maeda, Noriyuki Miyata, Tetsuji Yasuda, Akihiro Ohtake, Hisashi Yamada, Masahiko Hata, Sunghoon Lee, Takuya Hoshii, Mitsuru Takenaka, Shinichi Takagi

JAPANESE JOURNAL OF APPLIED PHYSICS 51 ( 6 ) 1 - 65701 2012.6

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DOI： 10.1143/JJAP.51.065701

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極薄膜Al₂O₃界面層を挿入したHfO₂/InGaAs MOS構造のCET薄膜化

鈴木麗菜, LEE S, KIM S.H, 星井拓也, 横山正史, 田岡紀之, JEVASUWAN W, 前田辰郎, 安田哲二, 市川磨, 福原昇, 秦雅彦, 竹中充, 高木信一

応用物理学関係連合講演会講演予稿集(CD-ROM) 59th ROMBUNNO.15P-GP1-15 - 2920 2012.2

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InGaAs MOS界面における伝導帯内界面準位の物理的起源

田岡紀之, 横山正史, KIM S.H, 鈴木麗菜, 飯田亮, LEE S, 星井拓也, JEVASUWAN W, 前田辰郎, 安田哲二, 市川磨, 福原昇, 秦雅彦, 竹中充, 高木信一

応用物理学関係連合講演会講演予稿集(CD-ROM) 59th ROMBUNNO.17P-A4-20 - 2968 2012.2

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近接積層InAs/GaNAs歪み補償自己組織化量子ドットの光学特性

楢原康平, 中野廣一, 庄司靖, 田中秀治, 長谷川隆一, 喜多隆, 星井拓也, 岡田至崇

応用物理学関係連合講演会講演予稿集(CD-ROM) 59th ROMBUNNO.16P-A8-7 - 3471 2012.2

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InGaAs MOS構造における伝導帯内界面準位によるフェルミレベルピニング

田岡紀之, 横山正史, KIM S.H, 鈴木麗菜, 飯田亮, LEE S, 星井拓也, JEVASUWAN W, 前田辰郎, 安田哲二, 市川磨, 福原昇, 秦雅彦, 竹中充, 高木信一

応用物理学関係連合講演会講演予稿集(CD-ROM) 59th ROMBUNNO.17P-A4-19 - 2967 2012.2

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ALD Al₂O₃界面層を用いたHfO₂/InGaAs MOS界面特性の改善

鈴木麗菜, LEE S, KIM S.H, 星井拓也, 横山正史, 田岡紀之, JEVASUWAN W, 前田辰郎, 安田哲二, 市川磨, 福原昇, 秦雅彦, 竹中充, 高木信一

応用物理学会学術講演会講演予稿集(CD-ROM) 72nd ROMBUNNO.1P-Q-6 - 2332 2011.8

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積層量子ドット構造におけるキャリア寿命に対する中間層膜厚依存性

楢原康平, 庄司靖, 吉田勝尚, 星井拓也, 田中秀治, 喜多隆, 岡田至崇

応用物理学会学術講演会講演予稿集(CD-ROM) 72nd ROMBUNNO.1A-ZA-10 - 2858 2011.8

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Al/ALD‐Al₂O₃/InGaAs MOS構造における蓄積容量の解析

田岡紀之, 鈴木麗菜, 横山正史, 飯田亮, LEE S, KIM S.H, 星井拓也, JEVASUWAN W, 前田辰郎, 安田哲二, 市川磨, 福原昇, 秦雅彦, 竹中充, 高木信一

応用物理学会学術講演会講演予稿集(CD-ROM) 72nd ROMBUNNO.1P-Q-5 - 2331 2011.8

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ALD‐Al₂O₃/InP界面におけるコンダクタンスカーブの定量解析

田岡紀之, 横山正史, KIM S. H, 鈴木麗菜, 星井拓也, 飯田亮, LEE S, 卜部友二, 宮田典幸, 安田哲二, 山田永, 福原昇, 秦雅彦, 竹中充, 高木信一

応用物理学関係連合講演会講演予稿集(CD-ROM) 58th ROMBUNNO.26P-KW-12 - 2976 2011.3

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窒素プラズマを用いたAl₂O₃/InGaAs MOS構造の価電子帯近傍界面特性の改善

LEE Sunghoon, 飯田亮, KIM S. H, 星井拓也, 田岡紀之, 横山正史, JEVASUWAN W, 安田哲二, 山田永, 福原昇, 秦雅彦, 竹中充, 高木信一

応用物理学関係連合講演会講演予稿集(CD-ROM) 58th ROMBUNNO.26P-KW-11 - 2975 2011.3

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Relationships between interface structures and electrical properties in the high-κ/III-V system

Tetsuji Yasuda, Noriyuki Miyata, Yuji Urabe, Hiroyuki Ishii, Taro Itatani, Hideki Takagi, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Akihiro Ohtake, Masafumi Yokoyama, Takuya Hoshii, Takashi Haimoto, Momoko Deura, Masakazu Sugiyama, Mitsuru Takenaka, Shinichi Takagi

Materials Research Society Symposium Proceedings 1194 53 - 64 2010.10

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コンダクタンス法によるALD‐Al₂O₃/InP界面の電気的特性評価

田岡紀之, 横山正史, KIM S. H, 星井拓也, 飯田亮, LEE S, 鈴木麗菜, 卜部友二, 宮田典幸, 安田哲二, 山田永, 福原昇, 秦雅彦, 竹中充, 高木信一

応用物理学会学術講演会講演予稿集(CD-ROM) 71st ROMBUNNO.15P-ZA-21 - 2524 2010.8

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Relationships among Interface Composition, Bonding Structures and MIS Properties at High-k/III-V Interfaces

安田哲二, 宮田典幸, 卜部友二, 石井裕之, 板谷太郎, 前田辰郎, 山田永, 福原昇, 秦雅彦, 大竹晃浩, 星井拓也, 横山正史, 竹中充, 高木信一

電子情報通信学会技術研究報告 110 ( 90(SDM2010 33-48) ) 49 - 54 2010.6

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There has been a significant interest in the III-V channel MISFET technology which expectedly enables performance improvement and power reduction when the gate length is scaled down to sub-10 nm. Combination of In-containing III-V matertials and ALD-deposited Al_2O_3 forms MIS interfaces with relatively low interface trap densities, allowing for the nMIS operation. In this report, we first identify the factors that possibly influence the generation and energy distribution of the interface traps at the high-k/III-V interfaces. We then discuss how the MIS properties are related to the chemical compositions and bonding structures of anions and cations at the interface.

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Relationships among Interface Composition, Bonding Structures and MIS Properties at High-k/III-V Interfaces

Yasuda Tetsuji, Miyata Noriyuki, Urabe Yuji, Ishii Hiroyuki, Itatani Taro, Maeda Tatsuro, Yamada Hisashi, Fukuhara Noboru, Ohtake Akihiro, Hoshii Takuya, Yokoyama Masafumi, Takenaka Mitsuru, Takagi Shinichi, TAKAGI Shinichi

Technical report of IEICE. SDM 110 ( 90 ) 49 - 54 2010.6

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There has been a significant interest in the III-V channel MISFET technology which expectedly enables performance improvement and power reduction when the gate length is scaled down to sub-10 nm. Combination of In-containing III-V matertials and ALD-deposited Al_2O_3 forms MIS interfaces with relatively low interface trap densities, allowing for the nMIS operation. In this report, we first identify the factors that possibly influence the generation and energy distribution of the interface traps at the high-k/III-V interfaces. We then discuss how the MIS properties are related to the chemical compositions and bonding structures of anions and cations at the interface.

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ECRプラズマ界面窒化によるALD‐Al₂O₃/InGaAs MOSキャパシタの界面特性向上

星井拓也, 横山正史, 山田永, 秦雅彦, 安田哲二, 竹中充, 高木信一

応用物理学関係連合講演会講演予稿集(CD-ROM) 57th ROMBUNNO.20A-P16-11 - 2851 2010.3

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界面窒化によるECRスパッタSiO₂/InGaAs MOSキャパシタの界面特性向上

星井拓也, 横山正史, 山田永, 秦雅彦, 安田哲二, 竹中充, 高木信一

応用物理学会学術講演会講演予稿集 70th ( 2 ) 749 2009.9

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微小領域選択MOVPEにおけるSi上InGaAsの原子構造と光学特性解析

出浦桃子, 近藤佳幸, 星井拓也, 竹中充, 高木信一, 中野義昭, 杉山正和

化学工学会秋季大会研究発表講演要旨集(CD-ROM) 41st A105 - 2 2009.8

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InP表面の直接窒化によるMISFETの作製とその電気的評価

灰本隆志, 中川翔太, 星井拓也, 竹中充, 高木信一

応用物理学関係連合講演会講演予稿集 56th ( 2 ) 908 2009.3

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多段階成長を用いた微小領域選択MOVPEにおけるSi上InGaAsの面内均一化

出浦桃子, 近藤佳幸, 星井拓也, 竹中充, 高木信一, 中野義昭, 杉山正和

応用物理学関係連合講演会講演予稿集 56th ( 1 ) 369 2009.3

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III‐V nMOSFET実現に向けた埋め込み再成長n+InP S/D形成

竹中充, 武田浩司, 星井拓也, 種村拓夫, 杉山正和, 中野義昭, 高木信一

応用物理学関係連合講演会講演予稿集 56th ( 2 ) 875 2009.3

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超薄膜III‐V‐OI MOSFET実現に向けたチャネルおよび接合形成技術

竹中充, 横山正史, 星井拓也, 出浦桃子, 灰本隆志, 中川翔太, KIM S, 杉山正和, 高木信一

応用物理学関係連合講演会講演予稿集 56th ( 0 ) 157 2009.3

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ECRスパッタSiO₂膜を用いたInGaAs MOSキャパシタの界面特性向上

星井拓也, 横山正史, 山田永, 秦雅彦, 安田哲二, 竹中充, 高木信一

応用物理学関係連合講演会講演予稿集 56th ( 2 ) 836 2009.3

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Si上InGaAsの微小領域選択MOVPEにおける横方向成長促進と均一性向上

出浦桃子, 星井拓也, 竹中充, 高木信一, 中野義昭, 杉山正和

化学工学会年会研究発表講演要旨集(CD-ROM) 74th A114 - 8 2009.2

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Dislocation-Free InGaAs on Si(111) Using Micro-Channel Selective-Area Metalorganic Vapor Phase Epitaxy

Momoko Deura, Takuya Hoshii, Takahisa Yamamoto, Yuichi Ikuhara, Mitsuru Takenaka, Shinichi Takagi, Yoshiaki Nakano, Masakazu Sugiyama

APPLIED PHYSICS EXPRESS 2 ( 1 ) 1 - 11101 2009.1

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微小領域選択MOVPEにおけるSi上InGaAsの原子構造と光学特性解析

出浦桃子, 近藤佳幸, 星井拓也, 竹中充, 高木信一, 中野義昭, 杉山正和

化学工学会研究発表講演要旨集 2009 ( 0 ) 2 - 2 2009

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DOI： 10.11491/scej.2009f.0.2.0

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In Situ monitoring of the initial nucleation for the formation of uniform InGaAs micro-discs on Si

M. Deura, Y. Kondo, T. Hoshii, M. Takenaka, S. Takagi, Y. Nakano, M. Sugiyama

ECS Transactions 25 ( 8 ) 521 - 524 2009

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Uniform InGaAs micro-discs on Si by micro-channel selective-area MOVPE

M. Deura, T. Hoshii, M. Takenaka, S. Takagi, Y. Nakano, M. Sugiyama

Proceedings of 21st IEEE International Conference on Indium Phosphide & Related Materials 48 - 51 2009

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Si上InGaAsの微小領域選択MOVPEにおける横方向成長促進と均一性向上

出浦桃子, 星井拓也, 竹中充, 高木信一, 中野義昭, 杉山正和

化学工学会研究発表講演要旨集 2009 ( 0 ) 8 - 8 2009

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DOI： 10.11491/scej.2009.0.8.0

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微小領域選択MOVPEにおけるSi上InGaAsの横方向成長過程

出浦桃子, 星井拓也, 竹中充, 高木信一, 中野義昭, 杉山正和

応用物理学会学術講演会講演予稿集 69th ( 1 ) 288 2008.9

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InP表面の直接窒化によるMIS界面特性の改善

灰本隆志, 星井拓也, 竹中充, 高木信一

応用物理学会学術講演会講演予稿集 69th ( 2 ) 719 2008.9

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微小領域選択MOVPEにおけるSi上InGaAsのGa組成と結晶構造

出浦桃子, 星井拓也, 山本剛久, 幾原雄一, 竹中充, 高木信一, 中野義昭, 杉山正和

応用物理学会学術講演会講演予稿集 69th ( 1 ) 288 2008.9

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InGaAs上へのAl₂O₃のALD成長による良好なMIS界面特性の実現

安田哲二, 宮田典幸, 石井裕之, 板谷太郎, 市川磨, 福原昇, 秦雅彦, 大竹晃浩, 灰本隆志, 星井拓也, 竹中充, 高木信一

応用物理学会学術講演会講演予稿集 69th ( 2 ) 719 2008.9

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微小領域選択MOVPEにより作製したSi(111)面上InGaAsの構造解析

杉山正和, 出浦桃子, 星井拓也, 山本剛久, 幾原雄一, 田尻寛男, 坂田修身, 木村滋, 中根了昌, 竹中充, 菅原聡, 高木信一, 中野義昭

応用物理学関係連合講演会講演予稿集 55th ( 1 ) 359 2008.3

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微小領域選択MOVPEにおけるSi上InGaAsの横方向成長に対するGa組成の影響

出浦桃子, 星井拓也, 杉山正和, 中根了昌, 竹中充, 菅原聡, 高木信一, 中野義昭

応用物理学関係連合講演会講演予稿集 55th ( 1 ) 359 2008.3

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微小領域選択成長によるSi(111)基板上へのInAsピラーの形成

星井拓也, 出浦桃子, 杉山正和, 中根了昌, 菅原聡, 竹中充, 中野義昭, 高木信一

応用物理学関係連合講演会講演予稿集 55th ( 1 ) 360 2008.3

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微小領域選択成長によるSi上III/V化合物半導体層の形成

出浦桃子, 星井拓也, 杉山正和, 中根了昌, 菅原聡, 竹中充, 高木信一, 中野義昭

化学工学会年会研究発表講演要旨集 73rd 202 - 208 2008.2

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DOI： 10.11491/scej.2008.0.208.0

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微小領域選択成長によるSi上III/V化合物半導体層の形成

出浦桃子, 星井拓也, 杉山正和, 中根了昌, 菅原聡, 竹中充, 高木信一, 中野義昭

化学工学会研究発表講演要旨集 2008 ( 0 ) 208 - 208 2008

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Language：Japanese Publisher：公益社団法人化学工学会

DOI： 10.11491/scej.2008.0.208.0

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Formation of InGaAs-On-Insulator Structures by Epitaxial Lateral Over Growth from (111) Si

HOSHII T., DEURA M., SHICHIJO M., SUGIYAMA M., SUGAHARA S., TAKENAKA M., NAKANO Y., TAKAGI S.

2007 132 - 133 2007.9

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微小孔を介したSi基板上InGaAs成長におけるモフォロジー向上

星井拓也, 出浦桃子, 杉山正和, 中根了昌, 菅原聡, 竹中充, 中野義昭, 高木信一

応用物理学会学術講演会講演予稿集 68th ( 1 ) 343 2007.9

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Si上III/V族化合物半導体の選択MOVPEにおける初期核発生過程の観察と制御

出浦桃子, 杉山正和, 星井拓也, 中根了昌, 竹中充, 菅原聡, 高木信一, 中野義昭

応用物理学会学術講演会講演予稿集 68th ( 1 ) 343 2007.9

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Effect of tensile strain on gate current of strained-Si n-channel metal-oxide-semiconductor field-effect transistors

Takuya Hoshii, Satoshi Sugahara, Shin-ichi Takagi

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 46 ( 4B ) 2122 - 2126 2007.4

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DOI： 10.1143/JJAP.46.2122

Web of Science

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Si上高品質III/V族化合物半導体薄膜形成に向けたMOVPEバッファ層の初期成長過程観察

出浦桃子, 杉山正和, 星井拓也, 菅原聡, 高木信一, 中野義昭

応用物理学関係連合講演会講演予稿集 54th ( 1 ) 365 2007.3

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Si基板上へのInGaAsの成長におけるInPバッファーの有効性

星井拓也, 出浦桃子, 七条真人, 杉山正和, 菅原聡, 中野義昭, 高木信一

応用物理学関係連合講演会講演予稿集 54th ( 1 ) 365 2007.3

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Fabrication of SiO_2/Ge MIS structures by plasma oxidation of ultrathin Si films grown on Ge

KUMAGAI Hiroshi, SHICHIJO Masato, ISHIKAWA Hiroto, HOSHII Takuya, SUGAHARA Satoshi, UCHIDA Yasutaka, TAKAGI Shinichi

Extended abstracts of the ... Conference on Solid State Devices and Materials 2006 398 - 399 2006.9

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Effect of Tensile Strain on Gate and Substrate Currents of strained-Si n-MOSFETs

HOSHII T., SUGAHARA S., TAKAGI S.

2006 164 - 165 2006.9

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ひずみSi MOSFETのゲートトンネル電流に与えるひずみの効果

星井拓也, 菅原聡, 高木信一

応用物理学関係連合講演会講演予稿集 53rd ( 2 ) 940 2006.3

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Ge上極薄Siのプラズマ酸化によるSiO₂/Ge MISキャパシタの作製と電気特性

熊谷寛, 七条真人, 石川寛人, 星井拓也, 菅原聡, 高木信一

応用物理学会学術講演会講演予稿集 66th ( 2 ) 673 2005.9

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Industrial property rights

半導体素子

角嶋邦之, 星井拓也, 若林整, 筒井一生, 岩井洋, 山本大貴

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Applicant：住友化学株式会社

Application no：特願2023-012882 Date applied：2023.1

Announcement no：特開2023-052789 Date announced：2023.4

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半導体素子

角嶋邦之, 星井拓也, 若林整, 筒井一生, 岩井洋, 山本大貴

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Applicant：住友化学株式会社

Application no：特願2022-114014 Date applied：2022.7

Announcement no：特開2022-145705 Date announced：2022.10

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pチャネルGaNMOSデバイス及びその製造方法

星井拓也, 筒井一生

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Applicant：国立大学法人東京工業大学

Application no：特願2021-137005 Date applied：2021.8

Announcement no：特開2023-031488 Date announced：2023.3

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半導体素子

角嶋邦之, 星井拓也, 若林整, 筒井一生, 岩井洋, 山本大貴

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Application no：特願2017-161604 Date applied：2017.8

Announcement no：特開2023-052789 Date announced：2023.4

Patent/Registration no：特許第7441345号 Date registered：2024.2

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電荷トラップ評価方法

角嶋邦之, 星井拓也, 若林整, 筒井一生, 岩井洋, 山本大貴

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Application no：特願2017-161603 Date applied：2017.8

Announcement no：特開2019-039785 Date announced：2019.3

Patent/Registration no：特許第7108386号 Date registered：2022.7

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電荷トラップ評価方法、及び半導体素子

角嶋邦之, 星井拓也, 若林整, 筒井一生, 岩井洋, 山本大貴

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Application no：特願2017-161603 Date applied：2017.8

Announcement no：特開2019-039785 Date announced：2019.3

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半導体層の電気的欠陥濃度評価方法、及び半導体素子

角嶋邦之, 星井拓也, 若林整, 筒井一生, 岩井洋, 山本大貴

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Application no：特願2017-161604 Date applied：2017.8

Announcement no：特開2019-040988 Date announced：2019.3

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半導体層の電気的欠陥濃度評価方法

角嶋邦之, 星井拓也, 若林整, 筒井一生, 岩井洋, 山本大貴

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Application no：特願2017-161604 Date applied：2017.8

Announcement no：特開2019-040988 Date announced：2019.3

Patent/Registration no：特許第7220508号 Date registered：2023.2

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半導体素子

角嶋邦之, 星井拓也, 若林整, 筒井一生, 岩井洋, 山本大貴

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Application no：特願2017-161603 Date applied：2017.8

Announcement no：特開2022-145705 Date announced：2022.10

Patent/Registration no：特許第7406596号 Date registered：2023.12

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半導体装置

角嶋邦之, 岩井洋, 筒井一生, 若林整, 星井拓也, 池内勇太, 戸野谷純一, 菊地拓雄, 高木孝治, 片岡淳司, 石川諭

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Applicant：株式会社東芝

Application no：特願2017-050425 Date applied：2017.3

Announcement no：特開2018-156993 Date announced：2018.10

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ガラス部材の製造方法及びガラス部材

岡田至崇, 宮野健次郎, 杉山正和, タマヨ・ルイス, エフライン・エドアルド, 渡辺健太郎, 星井拓也, 玉置亮

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Applicant：国立大学法人東京大学

Application no：特願2013-260712 Date applied：2013.12

Announcement no：特開2015-117147 Date announced：2015.6

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半導体デバイス及びその製造方法

高木信一, 竹中充, 星井拓也

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Applicant：国立大学法人東京大学

Application no：特願2009-256756 Date applied：2009.11

Announcement no：特開2011-103318 Date announced：2011.5

Patent/Registration no：特許第5499319号 Date issued：2014.3

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半導体デバイス及びその製造方法

高木信一, 竹中充, 星井拓也

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Applicant：国立大学法人東京大学

Application no：特願2009-256756 Date applied：2009.11

Announcement no：特開2011-103318 Date announced：2011.5

Patent/Registration no：特許第5499319号 Date registered：2014.3 Date issued：2014.3

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半導体デバイス及びその製造方法

高木信一, 竹中充, 星井拓也

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Applicant：国立大学法人東京大学

Application no：特願2009-256756 Date applied：2009.11

Announcement no：特開2011-103318 Date announced：2011.5

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Research Projects

高移動度二次元正孔ガスpチャネルGaNトランジスタの開発

Grant number：21K04172 2021.4 - 2025.3

日本学術振興会科学研究費助成事業基盤研究(C) 基盤研究(C)

星井拓也

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Grant amount：\4030000 （ Direct Cost: \3100000 、 Indirect Cost：\930000 ）

本研究は完全集積型GaNパワーデバイス実現に向けて重要となるpチャネルデバイスの性能向上を目指すものである。本年度はpチャネルデバイスの主要な伝導キャリアである二次元正孔ガス(2DHG)に対する外部応力印加効果の初期的な検証と、そこから派生した金属電極形成プロセスについての検証を主として行った。
外部応力印加の可能な測定系に、ホール効果測定を可能とする改造を実施した。本測定系については、～6e+12 cm^-2程度のキャリア密度を持つ2DEGの評価においては精度・再現性ともに十分なものとなっている。しかし2DHGを有するGaN基板に応力印加を印加した際には、応力印加前後での特性変化や、応力印加下での伝導特性の再現性が十分でないことが観測された。外部応力により基板内に不可逆な損傷が生じた可能性も否定はできないが、電極形成プロセスが十分に最適化されておらず応力による劣化あるいは特性変化をもたらしている可能性の方が高いと考えられ、前者の可能性の検証にも良好なコンタクト形成が必要であることから、この検証を行った。最終的な集積デバイスにおいても、本研究での検証においても、2DEGおよび2DHG双方に良好なコンタクトを形成できるプロセスを確立する必要があるため、電極堆積前の表面処理や電極堆積後の熱工程の順序や温度について実際のデバイスプロセスを念頭に比較、検証した。その結果、2DEGと2DHGで最適な電極堆積前処理が特徴的に異なっていることが判明し、2DEGと2DHGの一括アニールによるデバイスプロセス全体の熱負荷低減が実現できる可能性も示唆された。この検証の過程でも採用した原子層エッチング(ALE)についてはゲートスタックプロセスへの応用にも有効である結果が得られており、今後さらなるプロセス改善が期待できる。

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GaN transited having 3-dimensional channels with various operation modes using selectively grown Fin structures

Grant number：19H02192 2019.4 - 2023.3

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B)

Tsutsui Kazuo

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Grant amount：\16900000 （ Direct Cost: \13000000 、 Indirect Cost：\3900000 ）

For gallium nitride (GaN) power devices, lateral transistors having vertical wall type channels, so called FinFETs, were investigated. Based on the new proposal of use of a GaN selective growth technique, actual device operations were verified, in which the mask etching process for formation of growth windows were optimized from the viewpoints of low damage to the substrate surfaces and high crystalline quality of selectively grown GaN. On the other hand, a future technical trend has been discussed through the comparison of various channel conduction modes using device simulations, so that a possibility of performances higher than those obtained on conventional devices, HEMTs, has been revealed.

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GaN Transistors with Three-dimensional Channel Fabricated by Using Selective Area Growth

Grant number：15H03972 2015.4 - 2020.3

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (B) Grant-in-Aid for Scientific Research (B)

Tsutsui Kazuo

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Grant amount：\12740000 （ Direct Cost: \9800000 、 Indirect Cost：\2940000 ）

For an application to gallium nitride (GaN) power devices, FinFETs (Fin field effect transistors) having a three-dimensional channel structure, which are expected to exhibit low-loss characteristics superior to conventional high electron mobility transistors (HEMTs), fabricated by using selective area growth technique were invested. Device structures to obtain higher performance were also studied using device simulations. The experiments revealed suppressions of threading dislocations into the Fin structure channels fabricated by the selective are growth, and transistor operations were demonstrated.

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Development of low-loss buffer layer for fabrication and realization of high-performance optical devices on Si substrates

Grant number：15K20960 2015.4 - 2019.3

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Young Scientists (B) Grant-in-Aid for Young Scientists (B)

Hoshii Takuya

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Grant amount：\4030000 （ Direct Cost: \3100000 、 Indirect Cost：\930000 ）

Epitaxial growth of thin film buffer layer is promising technology to integrate low-loss and high-performance semiconductor devices on silicon platform. Also, evaluation methods for buried interfaces, such as growth hetero-interfaces, are necessary.
It was found that InAs thin film grown on Si(111) substrate using MBE has compressive strain in the initial few mono-layer and tensile strain after certain thickness, respectively. Additionally, it was demonstrated that photo-assisted impedance spectroscopy and potential-sweep admittance method can evaluate the states at buried interfaces.

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Control of 3D atomic structures of impurities doped in semiconductors and its application to low-loss high efficient devices

Grant number：26105014 2014.7 - 2019.3

Japan Society for the Promotion of Science Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area) Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area)

Tsutsui Kazuo, Sato Shintaro, Mori Daisuke, Hoshii Takuya, Iwai Hiroshi, Kawamura Tomoaki

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Grant amount：\83720000 （ Direct Cost: \64400000 、 Indirect Cost：\19320000 ）

Controls of impurity doping, electronic states of interfaces and surfaces are always significant problems for development of high performance semiconductor devices. Observation of atomic scale structures of particular sites governing their electrical properties is significant. In this project, photoelectron holography was employed as a main analytical method, and it was applied to silicon (Si), wide band gap semiconductors and layered material semiconductors. 3D structures of arsenic (As) doped in Si, electrically active subsitutional As atoms and electrically inactive clustered As atoms, and additive atoms incorporated at the interface of SiC and dielectric film were successfully evaluated. Particular electronic states of MoS2 films were also revealed.
Improvement of both sensitivity and energy resolution in the photoelectron holography technique realized analyses of impurity doped in semiconductors. New contributions to development of semiconductor technologies are expected.

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シリコン基板上のIII-V族化合物半導体MISFETの形成とその特性評価

Grant number：09J08505 2009 - 2010

日本学術振興会科学研究費助成事業特別研究員奨励費特別研究員奨励費

星井拓也

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Grant amount：\1400000 （ Direct Cost: \1400000 ）

本研究はSi基板上に形成されたIII-V層(InGaAs層)をチャネルとするSi基板上III-V族化合物半導体MISFETの製作とその高性能動作を目指すものである。その手法として、InP基板上InGaAsチャネル層に対しECRプラズマ窒化処理を行い、InGaAs MOS界面特性に及ぼす影響を評価した。
ALD-Al203を絶縁膜としたInGaAs MOS界面の界面準位密度は、InGaAs表面窒化処理によって、標準的な界面処理手法であるS終端処理と比べて有意に減少し、最小値で2.0x10^<11>cm^<-2>eV^<-1>という非常に低い値を示した。このような低い界面準位密度を得るにあたり、表面窒化によって形成された窒化物層によって、0.65nmのEOT増加が生じた。また、窒化条件による界面準位密度とEOTの変化を検証したところ、ECRのためのマイクロ波出力と窒化時間による影響が大きいことがわかった。界面準位密度については、高いマイクロ波出力ほど、短い時間で界面準位密度の減少が起こった。一方、EOTについてはマイクロ波出力に対する依存はあまり見られず、主に窒化時間に依存していることがわかった。このことから、高いマイクロ波出力を用いて短時間で処理を行うことで、EOT増加を抑制して良好な界面を得られる可能性が示唆された。さらに窒化時間の変化による界面の結合状態の違いをXPSで観察したところ、本実験で用いた条件では窒化物と同時に酸化も進行していることがわかった。また、界面準位密度が減少している時間は窒化反応が支配的に起こっている状態に対応しており、酸化反応が強く見えるようになると界面準位密度の増加がおこった。このことは界面準位密度の減少が窒化処理によるものであることを強く示唆しており、前述のマイクロ波出力に対する界面準位密度変化の違いも、マイクロ波出力がプラズマ中の活性種の密度に影響すると考えられることから窒素活性種の密度によって説明できる。以上のように、InGaAs表面窒化処理がMOS界面の界面準位密度に与える効果について調査し、窒化処理が界面準位密度低減に有効であることを示した。
MOSFETを作製することによる界面特性の検証については、FET作製プロセスの最適化が十分でなく、検証に至らなかった。
これらの研究内容に関して、2010年度中に、主著として、1件の査読付き論文、1件の査読付き国際会議、1件の国内会議発表を行い、また現在、更に1件の論文投稿を準備中である。

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