Updated on 2026/04/28

写真a

 
MIYAJIMA Shinsuke
 
Organization
School of Engineering Associate Professor
Title
Associate Professor
External link

Degree

  • Doctor of Engineering ( Tokyo Institute of Technology )

Research Interests

  • SiH4 and toxic gas free process for silicon solar cells

  • Low damage sputtering

  • Optical wireless power transmission

  • photovoltaic materials

  • Luminescent solar concentrator (LSC)

  • Cu2O

Research Areas

  • Manufacturing Technology (Mechanical Engineering, Electrical and Electronic Engineering, Chemical Engineering) / Electric and electronic materials

  • Nanotechnology/Materials / Energy chemistry

Education

  • Tokyo Institute of Technology   Graduate School, Division of Science and Engineering   Department of Physical Electronics

    - 2005

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    Country: Japan

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  • Tokyo Institute of Technology   Science of Engineering   Physical Electronics

    - 2005

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    Country: Japan

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  • Tokyo Institute of Technology   Science of Engineering   Physical Electronics

    - 2003

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    Country: Japan

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  • Tokyo Institute of Technology   Graduate School, Division of Science and Engineering   Department of Physical Electronics

    - 2003

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    Country: Japan

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  • Tokyo Institute of Technology   School of Engineering

    - 2001

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    Country: Japan

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  • Tokyo Institute of Technology   Faculty of Engineering   Department of Electrical and Electronic Engineering

    - 2001

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    Country: Japan

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Research History

  • Institute of Science Tokyo (Science Tokyo)   School of Engineering, Department of Electrical and Electronic Engineering   Associate Professor

    2024.10

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  • Tokyo Institute of Technology   School of Engineering, Department of Electrical and Electronic Engineering   Associate Professor

    2016.4

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  • Department of Physical Electronics, Tokyo Institute of Technology   Associate Professor

    2012.4 - 2016.3

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  • -Universität Stuttgart, Institut für Physikalische Electronik, 研究員

    2010.4

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  • Apr. 2010-Researcher, Institut für Physikalische Electronik, Universität Stuttgart

    2010

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  • -東京工業大学 大学院理工学研究科 電子物理工学専攻 助教

    2007.4

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  • -東京工業大学 大学院理工学研究科 電子物理工学専攻 助手

    2005.10

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  • -

    2005.4

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  • Oct. 2005-Assistant Professor, Department of Physical Electronics, Graduate School of Science and Engineering, Tokyo Institute of Technology

    2005

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  • Apr. 2005-Research Fellowship for Young Scientists (DC2), Japan Society for the Promotion of Science

    2005

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Professional Memberships

Committee Memberships

  • Japan Society of Applied Physics   JJAP Special Issue (PVSEC 2024), Guest Chief-Editor  

    2023.12 - 2025.6   

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  • 2024 International Conference on Solid State Devices and Materials(SSDM2024)   Steering Committee member  

    2023.12 - 2024.9   

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    Committee type:Other

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  • 35th International Photovoltaic Science and Engineering Conference (PVSEC-35)   Steering Committee member (Publication)  

    2023.4 - 2025.3   

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    Committee type:Other

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  • The Japan Society of Applied Physics   Editor (from2021 to 2023 : Associate Editor)  

    2021.4   

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    Committee type:Academic society

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  • Japan Society of Applied Physics   JJAP Special Issue (PVSEC 2017), Guest Editor  

    2017.11 - 2018.5   

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  • The Japan Society of Applied Physics   Editorial board member of "OYO BUTURI", Japanese-language membership journal  

    2017.4 - 2018.3   

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    Committee type:Academic society

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  • The Japan Society of Applied Physics   Program committee member (16.3 Bulk, thin-film and other silicon-based solar cells)  

    2016.11 - 2023.3   

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    Committee type:Academic society

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  • 光無線給電検討会   委員  

    2016.4   

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    Committee type:Other

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  • 27th International Photovoltaic Science and Engineering conference (PVSEC-27)   Organizing committee member, Steering committee member (Financial Audit), Program committee member (Area1: Crystalline and Thin Film Silicon PV)  

    2016.3 - 2017.11   

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  • The Japan Society of Applied Physics   The 63rd JSAP Spring Meeting, Local committee (Tokyo Institute of Technology)  

    2015.8 - 2016.3   

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  • ISCS2016   Program Committee (Photonic devices)  

    2015.6 - 2016.6   

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  • The 6th World Conference on Photovoltaic Energy Conversion (WCPEC-6)   Domestic organizing committee secretary, Domestic program committee (Area1: New Concept and New Materials for Future Technologies),  

    2014.4 - 2014.11   

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  • 応用物理学会 応用電子物性分科会   企画幹事  

    2014.3   

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  •   日本学術振興会 次世代の太陽光発電システム第175委員会 学界委員 (2009~)  

    2009 - 2019.3   

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  • 17th International Photovoltaic Science and Engineering Conference (PVSEC-17)   Program committee (Area4: Amorphous & Nano /Microcrystalline Silicon Based Solar Cells and Related Materials)  

    2007   

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  • 4th International Conference on Hot-Wire CVD (Cat-CVD) Process   International Program Committee  

    2006   

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Papers

  • High‐Rate Thermal Evaporation of CsPb(Br1−xClx)3 Thin Films and their Optoelectronic Properties for Photovoltaic Power Converters in Optical Wireless Power Transmission

    Atsuto Watanabe, Tomoki Ichikawa, Mitsuhide Ueda, Shigeru Yamada, Takashi Itoh, Shinsuke Miyajima

    physica status solidi (RRL) – Rapid Research Letters   2025.9

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssr.202500209

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  • Characterizations of scattering solar concentrators (SSCs) using TiO2-based light scattering layer and reflectors

    Keita Fujimoto, Shinsuke Miyajima

    Japanese Journal of Applied Physics   2025.4

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/adcbb0

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  • Device Simulation of CsPbBr3 Solar Cells for High‐Efficiency Blue Light Photovoltaic Power Converters

    Yuejie Tan, Shinsuke Miyajima

    physica status solidi (a)   2024.9

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.202400437

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  • Demonstration of Excellent Crystalline Silicon Surface Passivation (S < 1.27 cm s−1) by High‐Rate DC‐Sputtered Hydrogenated Amorphous Silicon

    Shasha Li, Shinsuke Miyajima

    Solar RRL   2024.4

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/solr.202400045

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  • Improvement of carrier transport properties of CsPbBr3 thin films by moisture absorption and TbCl3 doping technique

    Naoki Aso, Haruto Tani, Rintaro Fukamizu, Hirofumi Shimizu, Shinsuke Miyajima

    Japanese Journal of Applied Physics   2023.8

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/acd38d

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  • Nanocrystalline gallium nitride electron transport layer for cesium lead bromide photovoltaic power converter in blue light optical wireless power transmission

    Rintaro Fukamizu, Naoki Aso, Yuta Shiratori, Shinsuke Miyajima

    Japanese Journal of Applied Physics   2023.8

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/accaee

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  • Characterization of tunnel oxide passivated contact fabricated by sputtering and ion implantation technique

    Noboru Yamaguchi, Shasha Li, Shinsuke Miyajima

    Japanese Journal of Applied Physics   2023.3

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/acc66e

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  • Characterization of sputtered nanocrystalline gallium nitride for electron selective contact of crystalline silicon solar cell

    Yuta Shiratori, Shinsuke Miyajima

    Thin Solid Films   763   2022.12

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2022.139582

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  • Effective Photon Management of Non-Surface-Textured Flexible Thin Crystalline Silicon Solar Cells

    Inchan Hwang, Youngsoon Jeong, Yuta Shiratori, Jeonghwan Park, Shinsuke Miyajima, Ilsun Yoon, Kwanyong Seo

    Cell Reports Physical Science   1 ( 11 )   100242 - 100242   2020.11

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Elsevier {BV}  

    DOI: 10.1016/j.xcrp.2020.100242

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  • Impact of bilayer structures on the surface passivation quality of high‐rate‐sputtered hydrogenated amorphous silicon for silicon heterojunction solar cells

    Faris Akira Bin Mohd Zulkifly, Yuta Shiratori, Kazuyoshi Nakada, Shinsuke Miyajima

    Progress in Photovoltaics: Research and Applications   2020.9

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    Publishing type:Research paper (scientific journal)   Publisher:Wiley  

    DOI: 10.1002/pip.3298

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  • Photovoltaic effect in Si/SiO2 superlattice microdisk array solar cell structure

    Shigeru Yamada, Yusuke Shirayanagi, Teruhiko Narihara, Masatoshi Kumada, Sichanugrist Porponth, Yukimi Ichikawa, Shinsuke Miyajima, Makoto Konagai

    Superlattices and Microstructures   145   106640 - 106640   2020.9

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    DOI: 10.1016/j.spmi.2020.106640

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  • Widegap CH3NH3PbBr3 solar cells for optical wireless power transmission application

    Ryousuke Ishikawa, Takuya Kato, Ryotaro Anzo, Momoko Nagatake, Tatsuya Nishimura, Nozomu Tsuboi, Shinsuke Miyajima

    Applied Physics Letters   117 ( 1 )   2020.7

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0010009

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  • Effect of Superimposed DC Power on the Properties of Intrinsic Hydrogenated Amorphous Silicon Passivation Layer Deposited by RF Facing Target Sputtering

    Yuta Shiratori, Kazuyoshi Nakada, Shinsuke Miyajima

    IEEE Journal of Photovoltaics   10 ( 4 )   927 - 934   2020.7

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    Publishing type:Research paper (scientific journal)   Publisher:Institute of Electrical and Electronics Engineers ({IEEE})  

    DOI: 10.1109/JPHOTOV.2020.2989174

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  • Effect of high-temperature post-deposition annealing on cesium lead bromide thin films deposited by vacuum evaporation

    Ayuki Murata, Tatsuya Nishimura, Hirofumi Shimizu, Yuta Shiratori, Takuya Kato, Ryousuke Ishikawa, Shinsuke Miyajima

    AIP Advances   10 ( 4 )   2020.4

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    DOI: 10.1063/1.5139553

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  • Si surface passivation by using triode-type plasma-enhanced chemical vapor deposition with thermally energized film-precursors

    Chisato Niikura, Yuta Shiratori, Shinsuke Miyajima

    The European Physical Journal Applied Physics   89 ( 1 )   10101 - 10101   2020.1

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    Publishing type:Research paper (scientific journal)   Publisher:{EDP} Sciences  

    <jats:p>We fabricated hydrogenated amorphous Si (a-Si:H) passivation layers on the surfaces of Si wafers by using triode-type plasma-enhanced chemical vapor deposition with gas-heating, and discussed high-quality surface passivation for Si heterojunction solar cells. The sample with the a-Si:H layers corresponding to the highest proportion of SiH<jats:sub><jats:italic>x</jats:italic>(<jats:italic>x</jats:italic>=2,3)</jats:sub> content in SiH<jats:sub><jats:italic>x</jats:italic>(<jats:italic>x</jats:italic>=1–3)</jats:sub> content exhibited the minimum surface recombination velocity (<jats:italic>S</jats:italic>) after annealing. This suggests that using SiH<jats:sub><jats:italic>x</jats:italic>(<jats:italic>x</jats:italic>=2,3)</jats:sub>-rich a-Si:H grown at low-temperature as a passivation layer is advantageous to inhibit an epitaxial growth at the a-Si:H/crystalline Si interface, and that a structural relaxation of the a-Si:H takes place during post-deposition annealing, drastically improving passivation quality. Also, the importance to use a low <jats:italic>T</jats:italic><jats:sub>sub</jats:sub> and to optimize gas-heating and the triode technique, for obtaining simultaneously higher film quality and abrupt interface, is suggested. Low <jats:italic>S</jats:italic> obtained for our unoptimized samples implies the potency of this deposition technique. Nevertheless, further studies are needed to elucidate the impact of gas-heating and the triode technique on Si surface passivation. Temperature-dependent effective carrier lifetime for our samples might suggest relatively large electron affinity for an a-Si:H, which might be one possible reason for high-quality surface passivation.</jats:p>

    DOI: 10.1051/epjap/2020190299

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  • MEMS-Based Wavelength-Selective Bolometers

    Thang Duy Dao, Anh Tung Doan, Satoshi Ishii, Takahiro Yokoyama, H, eg{\aa}rd Sele {\O}rjan, Dang Hai Ngo, Tomoko Ohki, Akihiko Ohi, Yoshiki Wada, Chisato Niikura, Shinsuke Miyajima, Toshihide Nabatame, Tadaaki Nagao

    Micromachines   10 ( 6 )   416 - 416   2019.6

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:{MDPI} {AG}  

    <jats:p>We propose and experimentally demonstrate a compact design for membrane-supported wavelength-selective infrared (IR) bolometers. The proposed bolometer device is composed of wavelength-selective absorbers functioning as the efficient spectroscopic IR light-to-heat transducers that make the amorphous silicon (a-Si) bolometers respond at the desired resonance wavelengths. The proposed devices with specific resonances are first numerically simulated to obtain the optimal geometrical parameters and then experimentally realized. The fabricated devices exhibit a wide resonance tunability in the mid-wavelength IR atmospheric window by changing the size of the resonator of the devices. The measured spectral response of the fabricated device wholly follows the pre-designed resonance, which obviously evidences that the concept of the proposed wavelength-selective IR bolometers is realizable. The results obtained in this work provide a new solution for on-chip MEMS-based wavelength-selective a-Si bolometers for practical applications in IR spectroscopic devices.</jats:p>

    DOI: 10.3390/mi10060416

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  • Silicon Heterojunction Solar Cell with Intrinsic Hydrogenated Amorphous Silicon Layer Deposited by Facing Target Sputtering

    Yuta Shiratori, Jinwoo Kim, Kazuyoshi Nakada, Shinsuke Miyajima

    2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC   3142 - 3147   2018.11

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    Language:English   Publishing type:Research paper (international conference proceedings)   Publisher:Institute of Electrical and Electronics Engineers Inc.  

    DOI: 10.1109/PVSC.2018.8547972

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  • Silicon Heterojunction Solar Cells with CuO:N as p-type Layer

    Jinwoo Kim, Yuki Takiguchi, Kazuyoshi Nakada, Shinsuke Miyajima

    2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC   2145 - 2150   2018.11

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    DOI: 10.1109/PVSC.2018.8548186

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  • Characterization of p-type nitrogen-doped cuprous oxide / n-type hydrogenated microcrystalline silicon tunnel recombination junction for perovskite / crystalline silicon tandem solar cells Reviewed

    Jinwoo Kim, Yuki Takiguchi, Shinsuke Miyajima

    Japanese Journal of Applied Physics   Vol. 57   pp. 08RB05 - 1   2018.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.57.08RB05

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    Other Link: http://orcid.org/0000-0002-0184-3152

  • Effect of RF power on the properties of intrinsic hydrogenated amorphous silicon passivation layer deposited by facing target sputtering Reviewed

    Yuta Shiratori, Faris Akira Bin Mohd Zulkifly, Kazuyoshi Nakada, Shinsuke Miyajima

    Applied Physics Express   Vol. 11 ( 3 )   031301   2018.1

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Japan Society of Applied Physics  

    DOI: 10.7567/APEX.11.031301

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    Other Link: http://orcid.org/0000-0002-0184-3152

  • Influence of Fabrication Processes and Annealing Treatment on the Minority Carrier Lifetime of Silicon Nanowire Films

    Shinya Kato, Tatsuya Yamazaki, Yasuyoshi Kurokawa, Shinsuke Miyajima, Makoto Konagai

    Nanoscale Research Letters   12 ( 1 )   2017.12

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    DOI: 10.1186/s11671-017-2006-z

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  • Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage Reviewed

    Tatsuro Watahiki, Yohei Yuda, Akihiko Furukawa, Mikio Yamamuka, Yuki Takiguchi, Shinsuke Miyajima

    Applied Physics Letters   Vol. 111 ( 22 )   pp. 222104   2017.11

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    DOI: 10.1063/1.4998311

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  • Improving Optoelectronic Properties of Electrochemically Deposited Cuprous Oxide Thin-Films by Low-Temperature Post-Deposition Annealing

    Yuki Takiguchi, Aoi Orisaka, Shinsuke Miyajima

    Journal of Electrochemical Society   Vol. 162 ( No. 12 )   D802 - D804   2017.9

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    DOI: 10.1149/2.0081713jes

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  • Fabrication and characterization of sputtered Cu2O:N/c-Si heterojunction diode

    Yuki Takiguchi, Yutaro Takei, Kazuyoshi Nakada, Shinsuke Miyajima

    Applied Physics Letters   Vol. 111 ( No. 9 )   2017.8

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    DOI: 10.1063/1.4986084

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  • Optically-rough and physically-flat TCO substrates for superstrate-type thin-film solar cells: Sol-gel Zn1−xMgxO coating on reaction-ion etched glass substrates

    Lei Meng, Shinsuke Miyajima

    Solar Energy Materials and Solar Cells   Vol. 172   230 - 237   2017.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.solmat.2017.06.064

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  • Peeling process of thin-film solar cells using graphene layers Reviewed

    Ryousuke Ishikawa, Yasuyoshi Kurokawa, Shinsuke Miyajima, Makoto Konagai

    Applied Physics Express, Volume 10, Number 8   Volume 10 ( Number 8 )   2017.7

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    DOI: 10.7567/APEX.10.082301

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  • Effect of post-deposition annealing on low temperature metalorganic chemical vapor deposited gallium oxide related materials

    Yuki Takiguchi, Shinsuke Miyajima

    JOURNAL OF CRYSTAL GROWTH   468   129 - 134   2017.6

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.jcrysgro.2016.11.005

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  • Influence of Fabrication Processes and Annealing Treatment on the Minority Carrier Lifetime of Silicon Nanowire Films Reviewed

    Shinya Kato, Tatsuya Yamazaki, Yasuyoshi Kurokawa, Shinsuke Miyajima, Makoto Konagai

    Nanoscale Research Letters   Vol. 12 ( 242 )   2017.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1186/s11671-017-2006-z

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  • Optically-rough and physically-flat TCO substrates for superstrate-type thin-film solar cells: sol-gel Zn1-xMgxO coating on nanoimprint patterned glass substrates

    Lei Meng, Shinsuke Miyajima

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   161   38 - 45   2017.3

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.solmat.2016.11.019

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  • Bandgap tuning of silicon nanowire arrays for application to all-silicon tandem solar cells

    Yasuyoshi Kurokawa, Mitsugu Yano, Shinsuke Miyajima, Akira Yamada

    Japanese Journal of Applied Physics   Vol. 56 ( No. 4S )   2017.2

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Japan Society of Applied Physics  

    DOI: 10.7567/JJAP.56.04CS03

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  • Observation of Quantum Size Effect from Silicon Nanowall

    Daiji Kanematsu, Shuhei Yoshiba, Masakazu Hirai, Akira Terakawa, Makoto Tanaka, Yukimi Ichikawa, Shinsuke Miyajima, Makoto Konagai

    Nanoscale Research Letters   Vol. 11 ( 1 )   2016.11

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Springer New York LLC  

    DOI: 10.1186/s11671-016-1743-8

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  • Observation of Quantum Size Effect from Silicon Nanowall Reviewed

    Daiji Kanematsu, Shuhei Yoshiba, Masakazu Hirai, Akira Terakawa, Makoto Tanaka, Yukimi Ichikawa, Shinsuke Miyajima, Makoto Konagai

    Nanoscale Research Letters   11   530   2016.11

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1186/s11671-016-1743-8

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  • Device simulation of CH3NH3PbI3 perovskite/heterojunction crystalline silicon monolithic tandem solar cells using an n-type a-Si:H/p-type mu c-Si1-xOx:H tunnel junction

    Akira Nakanishi, Yuki Takiguchi, Shinsuke Miyajima

    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE   213 ( 7 )   1997 - 2002   2016.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1002/pssa.201532946

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  • Investigation of the optical absorption in Si/SiO2 superlattice for the application to solar cells Reviewed

    Shigeru Yamada, Makoto Konagai, Shinsuke Miyajima

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 4 )   2016.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.55.04ES06

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    Other Link: http://orcid.org/0000-0002-0184-3152

  • Temperature-dependent minority carrier lifetime of crystalline silicon wafers passivated by high quality amorphous silicon oxide Reviewed

    Masahiro Inaba, Soichiro Todoroki, Kazuyoshi Nakada, Shinsuke Miyajima

    JAPANESE JOURNAL OF APPLIED PHYSICS   55 ( 4 )   2016.4

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.55.04ES04

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    Other Link: http://orcid.org/0000-0002-0184-3152

  • Characteristics of Naturally Textured Zn1-xMgxO Transparent Conductive Thin Film Fabricated by Sol-Gel Process

    Lei Meng, Shinsuke Miyajima

    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   5 ( 7 )   Q195 - Q198   2016

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    DOI: 10.1149/2.0041607jss

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  • Fabrication of Si/SiO2 Superlattice Microwire Array Solar Cells Using Microsphere Lithography Reviewed

    Shigeru Yamada, Shinsuke Miyajima, Makoto Konagai

    JOURNAL OF NANOMATERIALS   2016   9245159   2016

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1155/2016/9245159

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  • Measurement of the Density of States in a Si Nanowall Exhibiting the Quantum Size Effect Reviewed

    Daiji Kanematsu, Shuhei Yoshiba, Masakazu Hirai, Akira Terakawa, Makoto Tanaka, Yukimi Ichikawa, Shinsuke Miyajima, Makoto Konagai

    2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)   2101 - 2104   2016

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  • Triple Layer Antireflection Design Concept for the Front Side of c-Si Heterojunction Solar Cell Based on the Antireflective Effect of nc-3C-SiC:H Emitter Layer Reviewed

    Erick Omondi Ateto, Makoto Konagai, Shinsuke Miyajima

    INTERNATIONAL JOURNAL OF PHOTOENERGY   2016   2016

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1155/2016/5282851

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    Other Link: http://orcid.org/0000-0002-0184-3152

  • Effect of annealing atmosphere on the electrical and optical properties of sol-gel derived Al doped Zn1-xMgxO thin film Reviewed

    Lei Meng, Makoto Konagai, Shinsuke Miyajima

    THIN SOLID FILMS   597   144 - 150   2015.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1016/j.tsf.2015.11.012

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  • Device simulation of cuprous oxide heterojunction solar cells

    Yuki Takiguchi, Shinsuke Miyajima

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 11 )   2015.11

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    DOI: 10.7567/JJAP.54.112303

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  • Application of n-type microcrystalline silicon oxide as back reflector of crystalline silicon heterojunction solar cells

    Kazuyoshi Nakada, Shinsuke Miyajima, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 8 )   2015.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/JJAP.54.082301

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  • Characterization of laser transferred contact through aluminum oxide passivation layer

    Shunsuke Urabe, Junpei Irikawa, Makoto Konagai, Shinsuke Miyajima

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 8 )   2015.8

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  • Effect of Al doping concentration on the electrical and optical properties of sol-gel derived Zn0.87Mg0.13O thin film

    Lei Meng, Shinsuke Miyajima, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 8 )   2015.8

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    DOI: 10.7567/JJAP.54.08KB09

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  • Low-temperature-processed a-SiOx:H/a-Si:H tandem cells for full spectrum solar cells

    Dong-Won Kang, Porponth Sichanugrist, Shinsuke Miyajima, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 8 )   2015.8

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    DOI: 10.7567/JJAP.54.08KB02

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  • Low-temperature-processed a-SiO

    Kang Dong-Won, Sichanugrist Porponth, Miyajima Shinsuke, Konagai Makoto

    Jpn. J. Appl. Phys.   54 ( 8 )   08KB02   2015.6

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    We developed wide-bandgap amorphous silicon (a-Si:H) and amorphous silicon oxide (a-SiO<inf>x</inf>:H) absorbers by extremely decreasing deposition temperature to as low as 100 °C. By adjusting hydrogen and carbon dioxide gas flow rates, device-quality absorbers and thus suitable single junction cells were obtained. An a-SiO<inf>x</inf>:H single-junction cell (i = 100 nm) fabricated employing the absorber we developed showed an open circuit voltage (V<inf>oc</inf>) of 1.007 V and a fill factor of 0.741, which are better than those of a-Si:H cells. This a-SiO<inf>x</inf>:H cell was introduced in a-SiO<inf>x</inf>:H/a-Si:H tandem cells as the top cell, which contributed to the achievement of a markedly high V<inf>oc</inf>of 1.910 V. This tandem cell with an efficiency of 9.25% showed better V<inf>oc</inf>and current matching property than the a-Si:H/a-Si:H (8.74%) tandem structure. The low-temperature-gradient a-SiO<inf>x</inf>:H/a-Si:H tandem cells can be a promising configuration for spectrum splitting applications.

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  • Silicon heterojunction solar cells with high surface passivation quality realized using amorphous silicon oxide films with epitaxial phase

    Kazuyoshi Nakada, Junpei Irikawa, Shinsuke Miyajima, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   54 ( 5 )   2015.5

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    DOI: 10.7567/JJAP.54.052303

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  • High-performance a-Si1-xOx:H/c-Si heterojunction solar cells realized by the a-Si:H/a-Si1-xOx:H stack buffer layer

    He Zhang, Kazuyoshi Nakada, Shinsuke Miyajima, Makoto Konagai

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   9 ( 4 )   225 - 229   2015.4

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    DOI: 10.1002/pssr.201409546

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  • Graphene transparent electrode for thin-film solar cells

    Ryousuke Ishikawa, Yasuyoshi Kurokawa, Shinsuke Miyajima, Makoto Konagai

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 12, NO 6   12 ( 6 )   777 - 780   2015

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    DOI: 10.1002/pssc.201400320

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  • Silicon quantum dot superlattice solar cell structure including silicon nanocrystals in a photogeneration layer Reviewed

    Shigeru Yamada, Yasuyoshi Kurokawa, Shinsuke Miyajima, Makoto Konagai

    NANOSCALE RESEARCH LETTERS   9   246   2014.5

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    DOI: 10.1186/1556-276X-9-246

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  • Amorphous silicon oxide passivation films for silicon heterojunction solar cells studied by hydrogen evolution

    Kazuyoshi Nakada, Shinsuke Miyajima, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   53 ( 4 )   04ER13.1-04ER13.5   2014.4

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  • Investigation of hydrogen plasma treatment for reducing defects in silicon quantum dot superlattice structure with amorphous silicon carbide matrix Reviewed

    Shigeru Yamada, Yasuyoshi Kurokawa, Shinsuke Miyajima, Makoto Konagai

    NANOSCALE RESEARCH LETTERS   9   72   2014.2

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    DOI: 10.1186/1556-276X-9-72

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  • Solid-phase crystallization of amorphous silicon nanowire array and optical properties

    Ryousuke Ishikawa, Shinya Kato, Tatsuya Yamazaki, Yasuyoshi Kurokawa, Shinsuke Miyajima, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   53 ( 2 )   02BE09.1-02BE09.4   2014.2

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  • Investigation of hydrogen plasma trestment for the improvement of silicon quantum dot superlattice solar cells with amorphous silicon carbide matrix Reviewed

    Shigeru Yamada, Yasuyoshi Kurokawa, Shinsuke Miyajima, Makoto Konagai

    Nanoscale Research Letters   9   246   2014

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  • Silicon quantum dot superlattice solar cell structure including silicon nanocrystals in a photogeneration layer

    Shigeru Yamada, Yasuyoshi Kurokawa, Shinsuke Miyajima, Makoto Konagai

    Nanoscale Research Letters   9 ( 1 )   1 - 7   2014

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    DOI: 10.1186/1556-276X-9-246

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  • Heterojunction Crystalline Silicon Solar Cells Using Nanocrystalline Cubic Silicon Carbide Emitter Reviewed

    Shinsuke Miyajima

    2014 21ST INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD)   65 - 68   2014

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  • Properties of Si/SiO2 Superlattice Nanodisc Array Prepared by Nanosphere lithography Reviewed

    Takaya Higa, Ryousuke Ishikawa, Shinsuke Miyajima, Makoto Konagai

    NEXT GENERATION TECHNOLOGIES FOR SOLAR ENERGY CONVERSION V   9178   2014

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    DOI: 10.1117/12.2061472

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  • Improvement of n-type nc-3C-SiC:H heterojunction emitter for c-Si solar cells Reviewed

    Kazuki Shimizu, Ateto Eric Omondi, Junpei Irikawa, Shinsuke Miyajima, Makoto Konagai

    2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)   1253 - 1256   2014

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  • Influence of substrates on formation of polycrystalline silicon nanowire films Reviewed

    Shinya Kato, Tatsuya Yamazaki, Shinsuke Miyajima, Makoto Konagai

    NEXT GENERATION TECHNOLOGIES FOR SOLAR ENERGY CONVERSION V   9178   2014

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    DOI: 10.1117/12.2061471

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  • Minority carrier lifetime of thin polycrystalline silicon nanowire films on polycrystalline silicon layer prepared by aluminum-induced crystallization Reviewed

    Tatsuya Yamazaki, Shinya Kato, Shinsuke Miyajima, Makoto Konagai

    NEXT GENERATION TECHNOLOGIES FOR SOLAR ENERGY CONVERSION V   9178   2014

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    DOI: 10.1117/12.2061663

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  • Development of transparent and conductive Al doped Zn1-xMgxO thin film by sol-gel process with two-step annealing Reviewed

    Lei Meng, Shinsuke Miyajima, Makoto Konagai

    THIN FILMS FOR SOLAR AND ENERGY TECHNOLOGY VI   9177   2014

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    DOI: 10.1117/12.2060236

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  • In-situ series connection of an amorphous silicon photovoltaic tandem module Reviewed

    Ahmed Garamoun, Rainer Merz, Shinsuke Miyajima, Markus B. Schubert

    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS   7 ( 11 )   963 - 965   2013.11

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  • Deposition of Ag(In,Ga)Se

    Xianfeng Zhang, Kobayashi Tsuyoshi, Kurokawa Yasuyoshi, Miyajima Shinsuke, Yamada Akira

    Jpn J Appl Phys   52 ( 5 )   55801 - 055801-4   2013.5

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    Ag(In,Ga)Se<inf>2</inf>(AIGS) films with a uniform Ag depth profile were successfully deposited by a modified three-stage method in which a Ag--Se layer was pre deposited at a low temperature (350 °C) before a high-temperature process at around 600 °C. The Ag--Se layer acted as a cap layer and effectively prevented the desorption of In from the films during the high-temperature process. The \text{In}/(\text{In}+\text{Ga}) ratio of the AIGS films was found to be about 0.15. The best AIGS solar cell deposited by this method showed an active area conversion efficiency of 10.7%.

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  • Deposition of Ag(In,Ga)Se-2 Solar Cells by a Modified Three-Stage Method Using a Low-Temperature- Deposited Ag-Se Cap Layer Reviewed

    Zhang Xianfeng, Tsuyoshi Kobayashi, Yasuyoshi Kurokawa, Shinsuke Miyajima, Akira Yamada

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 5 )   055801.1-055801.4   2013.5

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  • Improvement of Electrical Properties of Silicon Quantum Dot Superlattice Solar Cells with Diffusion Barrier Layers

    Shigeru Yamada, Yasuyoshi Kurokawa, Shinsuke Miyajima, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   52 ( 4 )   04CR02.1-04CR02.4   2013.4

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  • Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition

    Shinya Kato, Yasuyoshi Kurokawa, Shinsuke Miyajima, Yuya Watanabe, Akira Yamada, Yoshimi Ohta, Yusuke Niwa, Masaki Hirota

    Nanoscale Research Letters   8 ( 1 )   1 - 8   2013

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    DOI: 10.1186/1556-276X-8-361

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  • Preparation of Al-doped hydrogenated nanocrystalline cubic silicon carbide by VHF-PECVD for heterojunction emitter of n-type crystalline silicon solar cells Reviewed

    Daisuke Hamashita, Shinsuke Miyajima, Makoto Konagai

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   107   46 - 50   2012.12

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    DOI: 10.1016/j.solmat.2012.07.029

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  • Self-aligned local contacts through a-Si:H passivation layer Reviewed

    Kai Carstens, Shinsuke Miyajima, Markus B. Schubert

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   106   27 - 30   2012.11

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    DOI: 10.1016/j.solmat.2012.06.020

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  • Quantitative Analysis of Surface Morphology of Boron-Doped Zinc Oxide for Microcrystalline Silicon Solar Cells Reviewed

    Taweewat Krajangsang, Shuichi Hiza, Teruaki Hayashi, Ihsanul Afdi Yunaz, Aswin Hongsingthong, Shinsuke Miyajima, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 5 )   051101   2012.5

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  • Development of the Transparent Conductive Oxide Layer for Nanocrystalline Cubic Silicon Carbide/Silicon Heterojunction Solar Cells with Aluminum Oxide Passivation Layers Reviewed

    Junpei Irikawa, Shinsuke Miyajima, Tatsuro Watahiki, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   51 ( 2 )   02BP04   2012.2

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  • Effect of Hydrogen Dilution on the Metastability of Hydrogenated Amorphous Silicon Oxide Solar Cells Reviewed

    Sorapong Inthisang, Taweewat Krajangsang, Porponth Sichanugrist, Tatsuro Watahiki, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 11 )   111401   2011.11

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  • High Efficiency Hydrogenated Nanocrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cells Using an Optimized Buffer Layer Reviewed

    Junpei Irikawa, Shinsuke Miyajima, Tatsuro Watahiki, Makoto Konagai

    APPLIED PHYSICS EXPRESS   4 ( 9 )   092301   2011.9

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  • High Efficiency Hydrogenated Nanocrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cells Using an Optimized Buffer Layer

    Junpei Irikawa, Shinsuke Miyajima, Tatsuro Watahiki, Makoto Konagai

    APPLIED PHYSICS EXPRESS   4 ( 9 )   092301   2011.9

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  • Improvement of Rear Surface Passivation Quality in p-Type Silicon Heterojunction Solar Cells Using Boron-Doped Microcrystalline Silicon Oxide

    Suttirat Rattanapan, Tatsuro Watahiki, Shinsuke Miyajima, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 8 )   082301   2011.8

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  • Improvement of Rear Surface Passivation Quality in p-Type Silicon Heterojunction Solar Cells Using Boron-Doped Microcrystalline Silicon Oxide Reviewed

    Suttirat Rattanapan, Tatsuro Watahiki, Shinsuke Miyajima, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 8 )   082301   2011.8

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  • Modeling and simulation of heterojunction crystalline silicon solar cells with a nanocrystalline cubic silicon carbide emitter

    Shinsuke Miyajima, Junpei Irikawa, Akira Yamada, Makoto Konagai

    JOURNAL OF APPLIED PHYSICS   109 ( 5 )   054507   2011.3

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    DOI: 10.1063/1.3552888

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  • Fabrication of a-SiGeC:H solar cells using monomethyl germane by suppressing carbon incorporation for narrowing optical bandgap

    Do Yun Kim, Ihsanul Afdi Yunaz, Shunsuke Kasashima, Shinsuke Miyajima, Makoto Konagai

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   95 ( 3 )   829 - 837   2011.3

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  • Modeling and simulation of heterojunction crystalline silicon solar cells with a nanocrystalline cubic silicon carbide emitter Reviewed

    Shinsuke Miyajima, Junpei Irikawa, Akira Yamada, Makoto Konagai

    JOURNAL OF APPLIED PHYSICS   109 ( 5 )   054507   2011.3

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  • Fabrication of a-SiGeC:H solar cells using monomethyl germane by suppressing carbon incorporation for narrowing optical bandgap Reviewed

    Do Yun Kim, Ihsanul Afdi Yunaz, Shunsuke Kasashima, Shinsuke Miyajima, Makoto Konagai

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   95 ( 3 )   829 - 837   2011.3

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  • Effects of Annealing and Atomic Hydrogen Treatment on Aluminum Oxide Passivation Layers for Crystalline Silicon Solar Cells Reviewed

    Junpei Irikawa, Shinsuke Miyajima, Shuhei Kida, Tatsuro Watahiki, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 1 )   012301   2011.1

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  • Preparation of ZnO thin films using MOCVD technique with D2O/H2O gas mixture for use as TCO in silicon-based thin film solar cells

    Aswin Hongsingthong, Ihsanul Afdi Yunaz, Shinsuke Miyajima, Makoto Konagai

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   95 ( 1 )   171 - 174   2011.1

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    DOI: 10.1016/j.solmat.2010.04.025

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  • Wide-gap a-Si1-xCx:H solar cells with high light-induced stability for multijunction structure applications Reviewed

    Ihsanul Afdi Yunaz, Hiroshi Nagashima, Daisuke Hamashita, Shinsuke Miyajima, Makoto Konagai

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   95 ( 1 )   107 - 110   2011.1

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  • Preparation of ZnO thin films using MOCVD technique with D2O/H2O gas mixture for use as TCO in silicon-based thin film solar cells Reviewed

    Aswin Hongsingthong, Ihsanul Afdi Yunaz, Shinsuke Miyajima, Makoto Konagai

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   95 ( 1 )   171 - 174   2011.1

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  • Effects of Annealing and Atomic Hydrogen Treatment on Aluminum Oxide Passivation Layers for Crystalline Silicon Solar Cells

    Junpei Irikawa, Shinsuke Miyajima, Shuhei Kida, Tatsuro Watahiki, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   50 ( 1 )   012301   2011.1

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  • Wide-gap a-Si1-xCx:H solar cells with high light-induced stability for multijunction structure applications

    Ihsanul Afdi Yunaz, Hiroshi Nagashima, Daisuke Hamashita, Shinsuke Miyajima, Makoto Konagai

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   95 ( 1 )   107 - 110   2011.1

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  • High-quality nanocrystalline cubic silicon carbide emitter for crystalline silicon heterojunction solar cells Reviewed

    Shinsuke Miyajima, Junpei Irikawa, Akira Yamada, Makoto Konagai

    APPLIED PHYSICS LETTERS   97 ( 2 )   023504   2010.7

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    DOI: 10.1063/1.3460917

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  • High-quality nanocrystalline cubic silicon carbide emitter for crystalline silicon heterojunction solar cells

    Shinsuke Miyajima, Junpei Irikawa, Akira Yamada, Makoto Konagai

    APPLIED PHYSICS LETTERS   97 ( 2 )   023504   2010.7

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  • Effect of p-mu c-Si1-xOx:H layer on performance of hetero-junction microcrystalline silicon solar cells Reviewed

    Taweewat Krajangsang, Ihsanul Afdi Yunaz, Shinsuke Miyajima, Makoto Konagai

    CURRENT APPLIED PHYSICS   10 ( 3 )   S357 - S360   2010.5

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    DOI: 10.1016/j.cap.2010.02.016

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  • Effects of oxygen addition on electrical properties of silicon quantum dots/amorphous silicon carbide superlattice Reviewed

    Yasuyoshi Kurokawa, Shigeru Yamada, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    CURRENT APPLIED PHYSICS   10 ( 3 )   S435 - S438   2010.5

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    DOI: 10.1016/j.cap.2010.02.014

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  • Effect of p-mu c-Si1-xOx:H layer on performance of hetero-junction microcrystalline silicon solar cells

    Taweewat Krajangsang, Ihsanul Afdi Yunaz, Shinsuke Miyajima, Makoto Konagai

    CURRENT APPLIED PHYSICS   10 ( 3 )   S357 - S360   2010.5

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  • Effects of oxygen addition on electrical properties of silicon quantum dots/amorphous silicon carbide superlattice

    Yasuyoshi Kurokawa, Shigeru Yamada, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    CURRENT APPLIED PHYSICS   10 ( 3 )   S435 - S438   2010.5

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  • Hydrogen plasma treatment for improving bulk passivation quality of c-Si solar cells

    Suttirat Rattanapan, Hiroshi Yamamoto, Shinsuke Miyajima, Takehiko Sato, Makoto Konagai

    CURRENT APPLIED PHYSICS   10   S215 - S217   2010.3

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    DOI: 10.1016/j.cap.2009.11.021

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  • Hydrogen plasma treatment for improving bulk passivation quality of c-Si solar cells Reviewed

    Suttirat Rattanapan, Hiroshi Yamamoto, Shinsuke Miyajima, Takehiko Sato, Makoto Konagai

    CURRENT APPLIED PHYSICS   10   S215 - S217   2010.3

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  • EFFECT OF ATOMIC HYDROGEN TREATMENT ON PASSIVATION QUALITY OF ALUMINUM OXIDE FOR P-TYPE CRYSTALLINE SILICON Reviewed

    Junpei Irikawa, Shuhei Kida, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE   3181 - 3184   2010

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  • Optical Design of Multi-Stacked Intermediate Layers with Wavelength-Selective Reflectance for a-Si:H/mu c-Si:H Tandem Solar Cells Reviewed

    Bancha Janthong, Ihsanul Afdi Yunaz, Hidetada Tokioka, Shinsuke Miyajima, Makoto Konagai

    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE   2010

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  • AMORPHOUS SILICON SOLAR CELLS WITH NOVEL MESH SUBSTRATES FOR CONCENTRATOR PHOTOVOLTAIC APPLICATIONS Reviewed

    Shunsuke Kasashima, Ryohei Uzawa, Ihsanul Afdi Yunaz, Yasuo Kakihara, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE   2010

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  • High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition Reviewed

    Shinsuke Miyajima, Junpei Irikawa, Akira Yamada, Makoto Konagai

    APPLIED PHYSICS EXPRESS   3 ( 1 )   012301   2010

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  • ZnO Films Prepared by Two-Step MOCVD Process for Use as Front TCO in Silicon-based Thin Film Solar Cells Reviewed

    Aswin Hongsingthong, Ihsanul Afdi Yunaz, Shinsuke Miyajima, Makoto Konagai

    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE   1508 - 1511   2010

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  • HETERO-JUNCTION MICROCRYSTALLINE SILICON SOLAR CELLS WITH WIDE-GAP p-mu c-Si1-xOx:H LAYER Reviewed

    Taweewat Krajangsang, Shunsuke Kasashima, Ihsanul Afdi Yunaz, Shinsuke Miyajima, Makoto Konagai

    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE   1531 - 1534   2010

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  • Preparation of narrow-gap a-Si:H solar cells by VHF-PECVD technique Reviewed

    Do Yun Kim, Ihsanul Afdi Yunaz, Shunsuke Kasashima, Shinsuke Miyajima, Makoto Konagai

    AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY - 2010   1245   137 - 142   2010

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    DOI: 10.1557/PROC-1245-A07-07

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  • ZnO FILMS WITH VERY HIGH HAZE RATIO PREPARED BY MOCVD TECHNIQUE Reviewed

    Ihsanul Afdi Yunaz, Aswin Hongsingthong, Liping Zhang, Shinsuke Miyajima, Makoto Konagai

    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE   1592 - 1596   2010

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  • ZnO Films with Very High Haze Value for Use as Front Transparent Conductive Oxide Films in Thin-Film Silicon Solar Cells

    Aswin Hongsingthong, Taweewat Krajangsang, Ihsanul Afdi Yunaz, Shinsuke Miyajima, Makoto Konagai

    APPLIED PHYSICS EXPRESS   3 ( 5 )   051102   2010

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    DOI: 10.1143/APEX.3.051102

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  • Aluminum Doped Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by VHF-PECVD for p-type Window Layer of Silicon Based Thin-Film Solar Cells Reviewed

    Daisuke Hamashita, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE   3667 - 3670   2010

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    DOI: 10.1109/PVSC.2010.5615844

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  • SILICON BASED MULTIJUNCTION SOLAR CELLS WITH WIDE-GAP a-Si1-xCx:H TOP CELL: EXPERIMENTAL AND NUMERICAL APPROACHES Reviewed

    Ihsanul Afdi Yunaz, Shinsuke Miyajima, Makoto Konagai

    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE   317 - 322   2010

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  • ZnO Films with Very High Haze Value for Use as Front Transparent Conductive Oxide Films in Thin-Film Silicon Solar Cells Reviewed

    Aswin Hongsingthong, Taweewat Krajangsang, Ihsanul Afdi Yunaz, Shinsuke Miyajima, Makoto Konagai

    APPLIED PHYSICS EXPRESS   3 ( 5 )   051102   2010

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    DOI: 10.1143/APEX.3.051102

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  • Hydrogenated Amorphous Silicon Oxide Solar Cells Fabricated near the Phase Transition between Amorphous and Microcrystalline Structures Reviewed

    Sorapong Inthisang, Kobsak Sriprapha, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 12 )   122402   2009.12

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    DOI: 10.1143/JJAP.48.122402

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  • Hydrogenated Amorphous Silicon Oxide Solar Cells Fabricated near the Phase Transition between Amorphous and Microcrystalline Structures

    Sorapong Inthisang, Kobsak Sriprapha, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 12 )   122402   2009.12

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    DOI: 10.1143/JJAP.48.122402

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  • Optimization of p-Type Hydrogenated Microcrystalline Silicon Oxide Window Layer for High-Efficiency Crystalline Silicon Heterojunction Solar Cells Reviewed

    Jaran Sritharathikhun, Fangdan Jiang, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 10 )   101603   2009.10

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    DOI: 10.1143/JJAP.48.101603

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  • Optimization of p-Type Hydrogenated Microcrystalline Silicon Oxide Window Layer for High-Efficiency Crystalline Silicon Heterojunction Solar Cells

    Jaran Sritharathikhun, Fangdan Jiang, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 10 )   101603   2009.10

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    DOI: 10.1143/JJAP.48.101603

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  • Fabrication of amorphous silicon carbide films using VHF-PECVD for triple junction thin-film solar cell applications Reviewed

    Ihsanul Afdi Yunaz, Kenji Hashizume, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   93 ( 6-7 )   1056 - 1061   2009.6

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    DOI: 10.1016/j.solmat.2008.11.048

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  • Fabrication of amorphous silicon carbide films using VHF-PECVD for triple junction thin-film solar cell applications

    Ihsanul Afdi Yunaz, Kenji Hashizume, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   93 ( 6-7 )   1056 - 1061   2009.6

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    DOI: 10.1016/j.solmat.2008.11.048

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  • (総説)Si系薄膜太陽電池の現状と課題 Invited Reviewed

    宮島晋介, 山田明, 小長井誠

    材料の科学と工学   46 ( 1 )   7 - 12   2009

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  • EFFECT OF LIGHT INTENSITY ON PERFORMANCE OF SILICON-BASED THIN FILM SOLAR CELLS Reviewed

    Ihsanul Afdi Yunaz, Shunsuke Kasashima, Sorapong Inthisang, Taweewat Krajangsang, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3   436 - 440   2009

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  • Effect of light intensity on performance of silicon-based thin film solar cells Reviewed

    Ihsanul Afdi Yunaz, Shunsuke Kasashima, Sorapong Inthisang, Taweewat Krajangsang, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    Conference Record of the IEEE Photovoltaic Specialists Conference   000153 - 000157   2009

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    DOI: 10.1109/PVSC.2009.5411706

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  • Boron-doped Microcrystalline Silicon Oxide Film for Use as Back Surface Field in Cast Polycrystalline Silicon Solar Cells Reviewed

    Amornrat Limmanee, Tsutomu Sugiura, Hiroshi Yamamoto, Takehiko Sato, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 12 )   8796 - 8798   2008.12

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    DOI: 10.1143/JJAP.47.8796

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  • Boron-doped Microcrystalline Silicon Oxide Film for Use as Back Surface Field in Cast Polycrystalline Silicon Solar Cells

    Amornrat Limmanee, Tsutomu Sugiura, Hiroshi Yamamoto, Takehiko Sato, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 12 )   8796 - 8798   2008.12

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    DOI: 10.1143/JJAP.47.8796

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  • Optimization of Amorphous Silicon Oxide Buffer Layer for High-Efficiency p-Type Hydrogenated Microcrystalline Silion Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells Reviewed

    Jaran Sritharathikhun, Hiroshi Yamamoto, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 11 )   8452 - 8455   2008.11

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    DOI: 10.1143/JJAP.47.8452

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  • Optimization of Amorphous Silicon Oxide Buffer Layer for High-Efficiency p-Type Hydrogenated Microcrystalline Silion Oxide/n-Type Crystalline Silicon Heterojunction Solar Cells

    Jaran Sritharathikhun, Hiroshi Yamamoto, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 11 )   8452 - 8455   2008.11

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    DOI: 10.1143/JJAP.47.8452

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  • Silicon-based thin-film solar cells fabricated near the phase boundary by VHFPECVD technique

    Seung Yeop Myong, Kobsak Sriprapha, Yasutoshi Yashiki, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   92 ( 6 )   639 - 645   2008.6

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    DOI: 10.1016/j.solmat.2008.01.010

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  • Silicon-based thin-film solar cells fabricated near the phase boundary by VHFPECVD technique Reviewed

    Seung Yeop Myong, Kobsak Sriprapha, Yasutoshi Yashiki, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   92 ( 6 )   639 - 645   2008.6

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    DOI: 10.1016/j.solmat.2008.01.010

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  • Properties of n-type hydrogenated nanocrystalline cubic silicon carbide films deposited by VHF-PECVD at a low substrate temperature Reviewed

    Shinsuke Miyajima, Makoto Sawamura, Akira Yamada, Makoto Konagai

    JOURNAL OF NON-CRYSTALLINE SOLIDS   354 ( 19-25 )   2350 - 2354   2008.5

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    DOI: 10.1016/j.jnoncrysol.2007.09.085

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  • Influence of plasma power and substrate temperature on structure of nanocrystalline germanium carbon thin films by VHF plasma CVD

    Yasutoshi Yashiki, Seiichi Kouketsu, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    JOURNAL OF NON-CRYSTALLINE SOLIDS   354 ( 19-25 )   2355 - 2358   2008.5

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    DOI: 10.1016/j.jnoncrysol.2007.10.056

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  • Properties of n-type hydrogenated nanocrystalline cubic silicon carbide films deposited by VHF-PECVD at a low substrate temperature

    Shinsuke Miyajima, Makoto Sawamura, Akira Yamada, Makoto Konagai

    JOURNAL OF NON-CRYSTALLINE SOLIDS   354 ( 19-25 )   2350 - 2354   2008.5

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    DOI: 10.1016/j.jnoncrysol.2007.09.085

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  • Effect of Plasma Power on Structure of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition at a Low Substrate Temperature Reviewed

    Shinsuke Miyajima, Makoto Sawamura, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 5 )   3368 - 3371   2008.5

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    DOI: 10.1143/JJAP.47.3368

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  • Influence of plasma power and substrate temperature on structure of nanocrystalline germanium carbon thin films by VHF plasma CVD Reviewed

    Yasutoshi Yashiki, Seiichi Kouketsu, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    JOURNAL OF NON-CRYSTALLINE SOLIDS   354 ( 19-25 )   2355 - 2358   2008.5

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    DOI: 10.1016/j.jnoncrysol.2007.10.056

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  • Effect of Plasma Power on Structure of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition at a Low Substrate Temperature

    Shinsuke Miyajima, Makoto Sawamura, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS   47 ( 5 )   3368 - 3371   2008.5

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    DOI: 10.1143/JJAP.47.3368

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  • Properties of nanocrystalline SiC : Ge : H alloy deposited by hot-wire chemical vapor deposition using Organosilane and Organogermane Reviewed

    Shinsuke Miyajima, Yasutoshi Yashiki, Akira Yamada, Makoto Konagai

    THIN SOLID FILMS   516 ( 5 )   670 - 673   2008.1

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    DOI: 10.1016/j.tsf.2007.06.086

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  • Effect of thermal annealing on the properties of a-SiCN : H films by hot wire chemical vapor deposition using hexamethyldisilazane Reviewed

    Amornrat Limmanee, Michio Otsubo, Tsutomu Sugiura, Takehiko Sato, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    THIN SOLID FILMS   516 ( 5 )   652 - 655   2008.1

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    DOI: 10.1016/j.tsf.2007.06.217

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  • Size-controlled silicon quantum dots superlattice for thin-film solar cell applications

    Yasuyoshi Kurokawa, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    Materials Research Society Symposium Proceedings   1101   33 - 43   2008

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    DOI: 10.1557/proc-1101-kk12-01

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  • Development of amorphous silicon-based thin-film solar cells with low temperature coefficient Reviewed

    Kobsak Sriprapha, Sorapong Inthisang, Seung Yeop Myong, Shinsuke Miyajima, Akira Yamada, Porponth Sichanugrist, Makoto Konagai

    PHOTOVOLTAIC CELL AND MODULE TECHNOLOGIES II   7045   2008

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    DOI: 10.1117/12.792521

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  • WIDE-GAP a-SiC:H SOLAR CELLS WITH GRADED ABSORPTION LAYER FOR TRIPLE CELL APPLICATIONS Reviewed

    Ihsanul Afdi Yunaz, Kenji Hashizume, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4   900 - +   2008

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  • Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice Reviewed

    Yasuyoshi Kurokawa, Shigeki Tomita, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   46 ( 33-35 )   L833 - L835   2007.9

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    DOI: 10.1143/JJAP.46.L833

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  • Photoluminescence from silicon quantum dots in Si quantum dots/amorphous SiC superlattice

    Yasuyoshi Kurokawa, Shigeki Tomita, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   46 ( 33-35 )   L833 - L835   2007.9

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    DOI: 10.1143/JJAP.46.L833

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  • Effects of hydrogen dilution ratio on properties of hydrogenated nanocrystalline cubic silicon carbide films deposited by very high-frequency plasma-enhanced chemical vapor deposition Reviewed

    Shinsuke Miyajima, Makoto Sawamura, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   46 ( 25-28 )   L693 - L695   2007.7

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    DOI: 10.1143/JJAP.46.L693

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  • Effects of hydrogen dilution ratio on properties of hydrogenated nanocrystalline cubic silicon carbide films deposited by very high-frequency plasma-enhanced chemical vapor deposition

    Shinsuke Miyajima, Makoto Sawamura, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   46 ( 25-28 )   L693 - L695   2007.7

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    DOI: 10.1143/JJAP.46.L693

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  • High efficiency protocrystalline silicon/microcrystalline silicon tandem cell with zinc oxide intermediate layer Reviewed

    Seung Yeop Myong, Kobsak Sriprapha, Shinsuke Miyajima, Makoto Konagai, Akira Yamada

    APPLIED PHYSICS LETTERS   90 ( 26 )   263509   2007.6

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    DOI: 10.1063/1.2752736

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  • Preparation of microcrystalline germanium carbon thin films by hot-wire chemical vapor deposition using dimethylgermane Reviewed

    Yasutoshi Yashiki, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 5A )   2865 - 2868   2007.5

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    DOI: 10.1143/JJAP.46.2865

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  • Preparation of microcrystalline germanium carbon thin films by hot-wire chemical vapor deposition using dimethylgermane

    Yasutoshi Yashiki, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 5A )   2865 - 2868   2007.5

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  • Characterization of undoped, N- and P-type hydrogenated nanocrystalline silicon carbide films deposited by hot-wire chemical vapor deposition at low temperatures

    Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 4A )   1415 - 1426   2007.4

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    DOI: 10.1143/JJAP.46.1415

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  • Fabrication of microcrystalline cubic silicon carbide/crystalline silicon heterojunction solar cell by hot wire chemical vapor deposition Reviewed

    Chandan Banerjee, Karman Lakshmi Narayanan, Keisuke Haga, Jaran Sritharathikhun, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 1 )   1 - 6   2007.1

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    DOI: 10.1143/JJAP.46.1

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  • Preparation of hydrogenated amorphous silicon carbon nitride films by hot-wire chemical vapor deposition using hexamethyldisilazane for silicon solar cell applications

    Amornrat Limmanee, Michio Otsubo, Takehiko Sato, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 1 )   56 - 59   2007.1

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    DOI: 10.1143/JJAP.46.56

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  • Preparation of hydrogenated amorphous silicon carbon nitride films by hot-wire chemical vapor deposition using hexamethyldisilazane for silicon solar cell applications Reviewed

    Amornrat Limmanee, Michio Otsubo, Takehiko Sato, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS   46 ( 1 )   56 - 59   2007.1

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    DOI: 10.1143/JJAP.46.56

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  • Effect of boron doping on microcrystalline germanium carbon thin films Reviewed

    Yasutoshi Yashiki, Seiichi Kouketsu, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2007   989   81 - +   2007

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  • Properties of nanocrystalline 3C-SiC : H and SiC : Ge : H films deposited at low substrate temperatures Reviewed

    Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2006   910   69 - 77   2007

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  • Effects of nitrogen addition on the properties of a-SiCN : H films using hexamethyldisilazane Reviewed

    Amornrat Limmanee, Michio Otsubo, Tsutomu Sugiura, Takehiko Sato, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2007   989   49 - +   2007

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  • Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures Reviewed

    Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    Japanese Journal of Applied Physics   46 ( 4A )   1415 - 1426   2007

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    DOI: 10.1143/JJAP.46.1415

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  • Preparation of nanocrystalline silicon in amorphous silicon carbide matrix

    Yasuyoshi Kurokawa, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   45 ( 37-41 )   L1064 - L1066   2006.10

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    DOI: 10.1143/JJAP.45.L1064

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  • Preparation of nanocrystalline silicon in amorphous silicon carbide matrix Reviewed

    Yasuyoshi Kurokawa, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   45 ( 37-41 )   L1064 - L1066   2006.10

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    DOI: 10.1143/JJAP.45.L1064

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  • Aluminum-doped hydrogenated microcrystalline cubic silicon carbide films deposited by hot wire CVD Reviewed

    S Miyajima, A Yamada, M Konagai

    THIN SOLID FILMS   501 ( 1-2 )   186 - 189   2006.4

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    DOI: 10.1016/j.tsf.2005.07.164

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  • Deposition and characterization of mu c-Ge1-xCx thin films grown by hot-wire chemical vapor deposition using organo-germane Reviewed

    Y Yashiki, S Miyajima, A Yamada, M Konagai

    THIN SOLID FILMS   501 ( 1-2 )   202 - 205   2006.4

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    DOI: 10.1016/j.tsf.2005.07.174

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  • Deposition and characterization of mu c-Ge1-xCx thin films grown by hot-wire chemical vapor deposition using organo-germane

    Y Yashiki, S Miyajima, A Yamada, M Konagai

    THIN SOLID FILMS   501 ( 1-2 )   202 - 205   2006.4

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    DOI: 10.1016/j.tsf.2005.07.174

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  • Aluminum-doped hydrogenated microcrystalline cubic silicon carbide films deposited by hot wire CVD

    S Miyajima, A Yamada, M Konagai

    THIN SOLID FILMS   501 ( 1-2 )   186 - 189   2006.4

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    DOI: 10.1016/j.tsf.2005.07.164

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  • Low-temperature deposition of highly conductive n-type hydrogenated nanocrystalline cubic SiC films for solar cell applications Reviewed

    S Miyajima, K Haga, A Yamada, M Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   45 ( 12-16 )   L432 - L434   2006.4

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    DOI: 10.1143/JJAP.45.L432

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  • TiO2-coated transparent conductive oxide (SnO2 : F) films prepared by atmospheric pressure chemical vapor deposition with high durability against atomic hydrogen Reviewed

    M Kambe, K Sato, D Kobayashi, Y Kurokawa, S Miyajima, M Fukawa, N Taneda, A Yamada, M Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   45 ( 8-11 )   L291 - L293   2006.3

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    DOI: 10.1143/JJAP.45.L291

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  • TiO2-coated transparent conductive oxide (SnO2 : F) films prepared by atmospheric pressure chemical vapor deposition with high durability against atomic hydrogen

    M Kambe, K Sato, D Kobayashi, Y Kurokawa, S Miyajima, M Fukawa, N Taneda, A Yamada, M Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   45 ( 8-11 )   L291 - L293   2006.3

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    DOI: 10.1143/JJAP.45.L291

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  • Nanocrystalline silicon in amorphous silicon carbide matrix for Si quantum dots superlattice Reviewed

    Yasuyoshi Kurokawa, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2   138 - 141   2006

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    DOI: 10.1109/WCPEC.2006.279383

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  • Growth and characterization of germanium carbon thin films deposited by VHF plasma CVD technique Reviewed

    Yasutoshi Yashiki, Seiichi Kouketsu, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2   1608 - +   2006

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  • Fabrication of mu c-3C-SiC/c-Si heterojunction solar cell by hot wire CVD system Reviewed

    Chandan Banerjee, K. Haga, S. Miyajima, A. Yamada, M. Konagai

    CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2   1334 - +   2006

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  • Study of the structural properties of a-SiCN : H films using hexamethyidisilazane for high-quality silicon surface passivation Reviewed

    Amomrat Limmanee, Michio Otsubo, Takehiko Sato, Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2   1227 - 1230   2006

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  • Low temperature deposition of hydrogenated nanocrystalline cubic silicon carbide thin films by HWCVD and VHF-PECVD Reviewed

    Shinsuke Miyajima, Makoto Sawamura, Akira Yamada, Makoto Konagai

    CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2   1604 - +   2006

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  • Low-temperature deposition of highly conductive n-type hydrogenated nanocrystalline cubic SiC films for solar cell applications

    Shinsuke Miyajima, Keisuke Haga, Akira Yamada, Makoto Konagai

    Japanese Journal of Applied Physics, Part 2: Letters   45 ( 12-16 )   L432 - L434   2006

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    DOI: 10.1143/JJAP.45.L432

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  • Charge transport in hydrogenated boron-doped nanocrystalline silicon-silicon carbide alloys Reviewed

    SY Myong, O Shevaleevskiy, KS Lim, S Miyajima, M Konagai

    JOURNAL OF APPLIED PHYSICS   98 ( 5 )   054311   2005.9

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    DOI: 10.1063/1.2038781

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  • Charge transport in hydrogenated boron-doped nanocrystalline silicon-silicon carbide alloys

    SY Myong, O Shevaleevskiy, KS Lim, S Miyajima, M Konagai

    JOURNAL OF APPLIED PHYSICS   98 ( 5 )   054311   2005.9

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    DOI: 10.1063/1.2038781

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  • Strong influence of boron doping on nanocrystalline silicon-carbide formation by using photo-CVD technique Reviewed

    SY Myong, O Shevaleevskiy, KS Lim, S Miyajima, M Konagai

    JOURNAL OF NON-CRYSTALLINE SOLIDS   351 ( 1 )   89 - 92   2005.1

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    DOI: 10.1016/j.jnoncrysol.2004.09.019

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  • Strong influence of boron doping on nanocrystalline silicon-carbide formation by using photo-CVD technique

    SY Myong, O Shevaleevskiy, KS Lim, S Miyajima, M Konagai

    JOURNAL OF NON-CRYSTALLINE SOLIDS   351 ( 1 )   89 - 92   2005.1

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    DOI: 10.1016/j.jnoncrysol.2004.09.019

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  • Structural defects and electrical conductivity in nanocrystalline SiC : H films doped with boron and grown by photostimulated chemical-vapor deposition Reviewed

    OI Shevaleevskiy, SY Myong, KS Lim, S Miyajima, M Konagai

    SEMICONDUCTORS   39 ( 6 )   709 - 711   2005

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    DOI: 10.1134/1.1944863

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  • Highly conductive hydrogenated microcrystalline cubic silicon carbide films deposited by hot wire CVD at a low substrate temperature on glass substrates Reviewed

    S Miyajima, A Yamada, M Konagai

    Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005   1504 - 1507   2005

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  • Progress in the development of microcrystalline 3C-SiC, SiGeC and GeC thin films for solar cell applications Reviewed

    M Konagai, S Miyajima, Y Yashiki, T Watahiki, KL Narayanan, A Yamada

    Conference Record of the Thirty-First IEEE Photovoltaic Specialists Conference - 2005   1424 - 1427   2005

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  • Structural defects and electrical conductivity in nanocrystalline SiC : H films doped with boron and grown by photostimulated chemical-vapor deposition

    OI Shevaleevskiy, SY Myong, KS Lim, S Miyajima, M Konagai

    SEMICONDUCTORS   39 ( 6 )   709 - 711   2005

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    DOI: 10.1134/1.1944863

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  • Properties of hydrogenated microcrystalline cubic silicon carbide films deposited by hot wire chemical vapor deposition at a low substrate temperature

    Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    Japanese Journal of Applied Physics, Part 2: Letters   43 ( 9 )   L1190 - L1192   2004.9

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    DOI: 10.1143/JJAP.43.L1190

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  • Properties of hydrogenated microcrystalline cubic silicon carbide films deposited by hot wire chemical vapor deposition at a low substrate temperature Reviewed

    S Miyajima, A Yamada, M Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS   43 ( 9A-B )   L1190 - L1192   2004.9

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    DOI: 10.1143/JJAP.43.L1190

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  • Low-temperature preparation of boron-doped nanocrystalline SiC : H films using mercury-sensitized photo-CVD technique Reviewed

    SY Myong, TH Kim, KS Lim, KH Kim, BT Ahn, S Miyajima, M Konagai

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   81 ( 4 )   485 - 493   2004.3

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    DOI: 10.1016/j.solmat.2003.12.002

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  • Low-temperature preparation of boron-doped nanocrystalline SiC : H films using mercury-sensitized photo-CVD technique

    SY Myong, TH Kim, KS Lim, KH Kim, BT Ahn, S Miyajima, M Konagai

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   81 ( 4 )   485 - 493   2004.3

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    DOI: 10.1016/j.solmat.2003.12.002

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  • Low temperature (320 degrees C) deposition of hydrogenated microcrystalline cubic silicon carbide thin films Reviewed

    S Miyajima, A Yamada, M Konagai

    SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2   457-460   317 - 320   2004

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    DOI: 10.4028/www.scientific.net/MSF.457-460.317

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  • Low Temperature (320°C) Deposition of Hydrogenated Microcrystalline Cubic Silicon Carbide Thin Films

    S. Miyajima, A. Yamada, M. Konagai

    Materials Science Forum   457-460   317 - 320   2004

  • Highly conductive boron doped microcrystalline Si films deposited by hot wire cell method and its application to solar cells Reviewed

    S Miyajima, M Kim, Y Ide, A Yamada, M Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   42 ( 6A )   3328 - 3332   2003.6

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    DOI: 10.1143/JJAP.42.3328

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  • Highly conductive boron doped microcrystalline Si films deposited by hot wire cell method and its application to solar cells

    S Miyajima, M Kim, Y Ide, A Yamada, M Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   42 ( 6A )   3328 - 3332   2003.6

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    DOI: 10.1143/JJAP.42.3328

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  • Highly conductive microcrystalline silicon carbide films deposited by the hot wire cell method and its application to amorphous silicon solar cells Reviewed

    Shinsuke Miyajima, Akira Yamada, Makoto Konagai

    Thin Solid Films   430 ( 1-2 )   274 - 277   2003.4

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    DOI: 10.1016/S0040-6090(03)00132-9

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  • Highly conductive microcrystalline silicon carbide films deposited by the hot wire cell method and its application to amorphous silicon solar cells

    S Miyajima, A Yamada, M Konagai

    THIN SOLID FILMS   430 ( 1-2 )   274 - 277   2003.4

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    DOI: 10.1016/S0040-6090(03)00132-9

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  • 薄膜シリコン系太陽電池の展望 Invited

    小長井誠, 宮島晋介, 山田明

    応用物理   73   898   2003

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  • Microcrystalline silicon films and solar cells prepared by photochemical vapor deposition on textured SnO2 with high haze factors Reviewed

    Y Zhao, S Miyajima, Y Ide, A Yamada, M Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   41 ( 11A )   6417 - 6420   2002.11

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    DOI: 10.1143/JJAP.41.6417

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  • Microcrystalline silicon films and solar cells prepared by photochemical vapor deposition on textured SnO2 with high haze factors

    Y Zhao, S Miyajima, Y Ide, A Yamada, M Konagai

    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS   41 ( 11A )   6417 - 6420   2002.11

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    DOI: 10.1143/JJAP.41.6417

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  • Characterization of low temperature epitaxial Si and Si1-yCy films grown by hot wire cell method Reviewed

    T Watahiki, K Abe, H Tamura, S Miyajima, A Yamada, M Konagai

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   89 ( 1-3 )   328 - 331   2002.2

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    DOI: 10.1016/S0921-5107(01)00772-3

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  • Characterization of low temperature epitaxial Si and Si1-yCy films grown by hot wire cell method

    T Watahiki, K Abe, H Tamura, S Miyajima, A Yamada, M Konagai

    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY   89 ( 1-3 )   328 - 331   2002.2

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    DOI: 10.1016/S0921-5107(01)00772-3

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  • Low temperature epitaxial growth of Si and Si1-yCy films by hot wire cell method Reviewed

    T Watahiki, K Abe, H Tamura, S Miyajima, A Yamada, M Konagai

    THIN SOLID FILMS   395 ( 1-2 )   221 - 224   2001.9

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    DOI: 10.1016/S0040-6090(01)01272-X

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  • Low temperature epitaxial growth of Si and Si1-yCy films by hot wire cell method

    T Watahiki, K Abe, H Tamura, S Miyajima, A Yamada, M Konagai

    THIN SOLID FILMS   395 ( 1-2 )   221 - 224   2001.9

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    DOI: 10.1016/S0040-6090(01)01272-X

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  • Development of thin film solar cell based on Cu2ZnSnS4 thin films

    H Katagiri, K Saitoh, T Washio, H Shinohara, T Kurumadani, S Miyajima

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   65 ( 1-4 )   141 - 148   2001.1

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    DOI: 10.1016/S0927-0248(00)00088-X

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  • Development of thin film solar cell based on Cu2ZnSnS4 thin films Reviewed

    H Katagiri, K Saitoh, T Washio, H Shinohara, T Kurumadani, S Miyajima

    SOLAR ENERGY MATERIALS AND SOLAR CELLS   65 ( 1-4 )   141 - 148   2001.1

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    DOI: 10.1016/S0927-0248(00)00088-X

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▼display all

Books

  • Taiyo denchi no kiso to ouyou (ed. Makoto Konagai, Masafumi Yamaguchi, and Michio Kondo) p83-86 (in Japanese)

    Baifukan  2010  ( ISBN:9784563067809

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  • 太陽電池の基礎と応用 (日本学術振興会 次世代の太陽光発電システム第175委員会 監修、小長井誠・山口真史・近藤道雄 編著) p83-86

    培風館  2010  ( ISBN:9784563067809

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Presentations

  • [OWPT9-02] Development of CsPb(Br0.45Cl0.55)3 photovoltaic power converter for blue light optical wireless power transmission

    Atsuto Watanabe, Yuejie Tan, Kyohei Goi, Shinsuke Miyajima

    The 7th Optical Wireless and Fiber Power Transmission Conference (OWPT2025)  2025.4 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:PACIFICO Yokohama   Country:Japan  

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  • [OWPT6-03] Device simulation based design of CsPb(Br0.45Cl0.55)3 photovoltaic power converter for blue light using Bayesian optimization International coauthorship International conference

    Kyohei Goi, Atsuto Watanabe, Yuejie Tan, Julian G. Fernandez, Javier F. Lozano, Antonio García-Loureiro, Shinsuke Miyajima

    The 7th Optical Wireless and Fiber Power Transmission Conference (OWPT2025)  2025.4 

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    Venue:PACIFICO Yokohama   Country:Japan  

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  • [7p-P09-5] CsPb(Br0.42Cl0.58)3膜の水分吸着処理による特性改善

    入江 真優, 五井 響平, 渡邉 篤人, 宮島 晋介

    第86回応用物理学会秋季学術講演会  2025.9 

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  • [9a-P02-24] NaF添加Cu/CuO混合ターゲットを用いてDCスパッタにより形成したCu2O薄膜の特性評価

    畑川 健勝, 関口 晨雄, 宮島 晋介

    第86回応用物理学会秋季学術講演会  2025.9 

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  • [10a-N304-2] Achievement of 696 mV iVoc in a TOPCon Structure via a Safe Process Free from SiH4 and Other Toxic Gases

    Shasha Li, Koki Omori, Shinsuke Miyajima

    2025.9 

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  • [P1-58] Analysis of transient photocurrent of CsPbBr3 thin film deposited by vacuum deposition

    Naoki Ito, Atsuto Watanabe, Shinsuke Miyajima

    EM-NANO 2025 The 10th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies  2025.6 

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    Language:English   Presentation type:Poster presentation  

    Venue:Fukui Prefectural Hall, Fukui   Country:Japan  

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  • (We2d-O31-05) Super high-rate sputtering of high-quality hydrogenated amorphous silicon passivation layer International conference

    Shasha Li,Shinsuke Miyajima

    The 35th International Photovoltaic Science and Engineering Conference (PVSEC-35)  2024.11 

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    Venue:Numazu, Japan   Country:Japan  

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  • (Tu2d-O52) Characterization of Particle Assisted Solar Concentrators (PASC) with simple structure International conference

    Keita Fujimoto,Shinsuke Miyajima

    The 35th International Photovoltaic Science and Engineering Conference (PVSEC-35)  2024.11 

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    Venue:Numazu, Japan   Country:Japan  

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  • (Tu2-P31-14) High-Quality Tunnel Oxide Passivated Contact Fabricated Using Sputtered Amorphous Silicon and Spin-On Doping International conference

    Shasha Li,Koki Omori,Yasushi Kawaguchi,Noboru Yamaguchi,Shinsuke Miyajima

    The 35th International Photovoltaic Science and Engineering Conference (PVSEC-39)  2024.11 

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    Venue:Numazu, Japan   Country:Japan  

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  • (Th2-P51-45) Close space sublimation of CsPbBr3 films for photovoltaic device applications International conference

    Kyosuke Yawata,Shinsuke Miyajima

    The 35th International Photovoltaic Science and Engineering Conference (PVSEC-38)  2024.11 

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    Venue:Numazu, Japan   Country:Japan  

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  • (Th2-P51-49) Fabrication of CsPb(Br0.45Cl0.55)3 photovoltaic power converters for optical wireless power transmission systems using NiOx hole transport layer International conference

    Atsuto Watanabe,Yosuke Abe,Takahito Nishimura,Shinsuke Miyajima

    The 35th International Photovoltaic Science and Engineering Conference (PVSEC-36)  2024.11 

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    Venue:Numazu, Japan   Country:Japan  

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  • (Th2-P51-17) Device simulation on CsPbBr3 photovoltaic power converter using ZnMgO buffer layer and Si-doped GaN transparent conducting layer International conference

    Yuejie Tan,Lei Meng,Shinsuke Miyajima

    The 35th International Photovoltaic Science and Engineering Conference (PVSEC-37)  2024.11 

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    Venue:Numazu, Japan   Country:Japan  

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  • [P5-20] DC sputtering of Cu2O films by using Cu/CuO mixture target International conference

    Akio Sekiguchi,Shinsuke Miyajima

    The 17th International Symposium on Sputtering & Plasma Processes (ISSP2024)  2024.7 

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    Language:English   Presentation type:Poster presentation  

    Venue:Kyoto Research Park, Kyoto, Japan   Country:Japan  

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  • [P3-08] The influence of oxygen addition and post-deposition annealing on nanocrystalline GaN deposited by RF-sputtering International conference

    Yuejie TAN,Shinsuke Miyajima

    The 17th International Symposium on Sputtering & Plasma Processes (ISSP2024)  2024.7 

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    Language:English   Presentation type:Poster presentation  

    Venue:Kyoto Research Park, Kyoto, Japan   Country:Japan  

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  • [SP2-02] Can Sputtering Be Used as a High-Rate Deposition Technique for Surface Passivation Layer in Silicon Solar Cells? International conference

    Shasha Li,Shinsuke Miyajima

    The 17th International Symposium on Sputtering & Plasma Processes (ISSP2024)  2024.7 

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    Language:English   Presentation type:Oral presentation (general)  

    Venue:Kyoto Research Park, Kyoto, Japan   Country:Japan  

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  • [25a-P05-4] スパッタおよびイオン注入を用いた高品質(τeff > 10 ms) TOPCon構造の作製

    山口 昇,Li Shasha,宮島 晋介

    2024年第71回応用物理学会春季学術講演会  2024.3 

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    Language:Japanese   Presentation type:Poster presentation  

    Venue:東京都市大学、世田谷キャンパス、日本   Country:Japan  

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  • [25a-P05-2] 簡便な構造を有する平板型太陽光集光器(LSC)の評価

    藤本 敬太,宮島 晋介

    2024年第71回応用物理学会春季学術講演会  2024.3 

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    Language:Japanese   Presentation type:Poster presentation  

    Venue:東京都市大学、世田谷キャンパス、日本  

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  • [24p-12M-8] Optimization of i-a-Si:H passivation process by DC facing target sputtering deposition

    Shasha Li,Shinsuke Miyajima

    2024年第71回応用物理学会春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学、世田谷キャンパス、日本   Country:Japan  

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  • [24p-22C-10] 青色光を用いた光無線給電用受光器に向けたCsPb(Br1-xClx)3薄膜の作製

    渡邉 篤人,宮島 晋介

    2024年第71回応用物理学会春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学、世田谷キャンパス、日本   Country:Japan  

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  • [24p-12M-10] アモルファスSiのスパッタとスピンオンドーピングによる高品質正孔選択性コンタクトの形成

    大森 康生,Li Shasha1,宮島 晋介

    2024年第71回応用物理学会春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Oral presentation (general)  

    Venue:東京都市大学、世田谷キャンパス、日本   Country:Japan  

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  • [22p-P03-28] 近接昇華法によるCsPbBr3薄膜の形成

    八幡 恭輔,宮島 晋介

    2024年第71回応用物理学会春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東京都市大学、世田谷キャンパス、日本   Country:Japan  

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  • [22p-P03-27] 真空蒸着により作製したCsPbBr3薄膜の光導電率の過渡特性

    伊藤 尚輝,渡邉 篤人,宮島 晋介

    2024年第71回応用物理学会春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東京都市大学、世田谷キャンパス、日本   Country:Japan  

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  • [23a-P06-13] Cu/CuO混合ターゲットを用いたCu2O膜のDCスパッタリング

    関口 晨雄,宮島 晋介

    2024年第71回応用物理学会春季学術講演会  2024.3 

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    Event date: 2024.3

    Language:Japanese   Presentation type:Poster presentation  

    Venue:東京都市大学、世田谷キャンパス、日本   Country:Japan  

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  • Improvement of n-type nc-3C-SiC:H heterojunction emitter International conference

    Kazuki Shimizu, Ateto Erick Omondi, Junpei Irikawa, Shinsuke Miyajima, Makoto Konagai

    2014.6 

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  • Preparation of Germanium Quantum Dot in Amorphous Silicon Carbide Matrix for 3rd Generation Photovoltaics

    E-MRS Spring Meeting (Symposium B, Inorganic and Nanostructured Photovoltaics (INP)), Congress Center, Strasbourg, France, June 8-12, 2009  2009 

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  • PROPERTIES OF HETEROJUNCTION CRYSTALLINE SILICON SOLAR CELLS WITH A HYDROGENATED NANOCRYSTALLINE CUBIC SILICON CARBIDE WINDOW LAYER.(Shinsuke Miyajima, Akira Yamada, Makoto Konagai)

    18th International Photovoltaic Science and Engineering, Science City Convention Center, Kolkata, India, Jan 19-23, 2009  2009 

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  • Tutorial 2 (Invited): Heterojunction crystalline silicon solar cells (Shinsuke Miyajima)

    19th International Photovoltaic Science and Engineering Conference. Nov.9-13, 2009, ICC Jeju, Korea  2009 

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  • (招待講演)薄膜Si系太陽電池の現状と課題(宮島晋介、山田明、小長井誠)

    第28回電子材料シンポジウム(EMS-28), July 8-10, 2009, Laforet Biwako  2009 

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  • nc-SiC:HによるSi基板のパッシベーションにおけるバッファ層の効果 (宮島晋介, 山田明, 小長井誠)

    2008年春季 第55回応用物理学関係連合講演会  2008 

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  • Tutorial 2 (Invited): Heterojunction crystalline silicon solar cells (Shinsuke Miyajima)

    19th International Photovoltaic Science and Engineering Conference. Nov.9-13, 2009, ICC Jeju, Korea  2009 

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  • (Invited) Si quantum dots for all-silicon tandem solar cells (Shinsuke Miyajima, Akira Yamada, Makoto Konagai)

    14th International Conference on Modulated Semiconductor structures (MSS-14).  2009 

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  • (Invited) Heterojunction crystalline silicon solar cells with a-Si1-xOx:H or nc-3C-SiC:H emitter (Shinsuke Miyajima, Jaran Sritharathikhun, Akira Yamada, Makoto Konagai)

    5th Workshop on the Future Direction of Photovoltaics, Aogaku Kaikan, Tokyo, Japan, March 4-5, 2009 (Organized by: Japan Society for the Promotion of Science, The 175th Committee on Innovative Photovoltaic Power Generation System).  2009 

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  • (Invited) Si quantum dots for all-silicon tandem solar cells (Shinsuke Miyajima, Akira Yamada, Makoto Konagai)

    14th International Conference on Modulated Semiconductor structures (MSS-14).  2009 

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  • (Invited) Heterojunction crystalline silicon solar cells with a-Si1-xOx:H or nc-3C-SiC:H emitter (Shinsuke Miyajima, Jaran Sritharathikhun, Akira Yamada, Makoto Konagai)

    5th Workshop on the Future Direction of Photovoltaics, Aogaku Kaikan, Tokyo, Japan, March 4-5, 2009 (Organized by: Japan Society for the Promotion of Science, The 175th Committee on Innovative Photovoltaic Power Generation System).  2009 

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  • Evaluation of a-SiO:H passivation films for application to SHJ solar cells International conference

    Kazuyoshi Nakada, Shinsuke Miyajima, Makoto Konagai

    PVSEC-23  2013.11 

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  • Characterization of poly-Si nanowire by photoacoustic spectroscopy

    MIYAZAKI HISASHI, MORIMOTO JUN, KATO SHINYA, YAMAZAKI TATSUYA, ISHIKAWA RYOUSUKE, MIYAJIMA SHINSUKE, KONAGAI MAKOTO

    超音波エレクトロニクスの基礎と応用に関するシンポジウム講演予稿集  2013.11 

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  • Development of transparent and conductive Al doped Zn1-xMgxO thin film by sol-gel process with two-step annealing

    Lei Meng, Shinsuke Miyajima, Makoto Konagai, Makoto Konagai

    Proceedings of SPIE - The International Society for Optical Engineering  2014.1 

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    © 2014 SPIE. Al doped Zn1-xMgxO (AZMO) thin film was developed by sol-gel process with two-step annealing. Effect of annealing temperature on structural, optical and electrical properties was investigated. It was found that first annealing mainly determines the film crystallinity and grain size, while the second annealing plays a critical role in activating dopant. All of AZMO thin films show a (002) preferential orientation and a high transmittance of over 85% in wavelength region from 400 nm to 1500 nm. A resistivity of 2.1×10-2 Ωcm was achieved for a film with an optical bandgap of 3.6 eV.

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  • Influence of substrates on formation of polycrystalline silicon nanowire Films

    Shinya Kato, Tatsuya Yamazaki, Shinsuke Miyajima, Makoto Konagai, Makoto Konagai

    Proceedings of SPIE - The International Society for Optical Engineering  2014.1 

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    © 2014 SPIE. Polycrystalline silicon nanowires (poly-SiNWs) films were successfully prepared by using metal assisted chemical etching of polycrystalline silicon (poly-Si) films. The poly-Si films were prepared by solid-phase crystallization of amorphous silicon (a-Si) deposited by different deposition techniques on different substrates. In the case of the electron beam evaporated a-Si on a quartz substrate, the formation of poly-SiNWs was not observed and the structure was found to be porous silicon. On the other hand, poly-SiNWs successfully formed from poly-Si on a silicon substrate. We also found that deposition techniques for a-Si films affect the formation of poly-SiNWs.

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  • PROPERTIES OF HETEROJUNCTION CRYSTALLINE SILICON SOLAR CELLS WITH A HYDROGENATED NANOCRYSTALLINE CUBIC SILICON CARBIDE WINDOW LAYER.(Shinsuke Miyajima, Akira Yamada, Makoto Konagai)

    18th International Photovoltaic Science and Engineering, Science City Convention Center, Kolkata, India, Jan 19-23, 2009  2009 

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  • Silicon heterojunction solar cells with a a-Al1-xOx:H rear surface passivation layer(Junpei Irikawa, Shinsuke Miyajima, Akira Yamada, Makoto Konagai)

    18th International Photovoltaic Science and Engineering, Science City Convention Center, Kolkata, India, Jan 19-23, 2009  2009 

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  • LOW TEMPERATURE DEPOSITION OF ALMINNUM DOPED HYDROGENATED NANO CRYSTALLINE CUBIC SILICON CARBIDE FOR THE WINDOW LAYER OF SILICON-BASED THIN-FILM SOLAR CELLS WITH A WIDEGAP I-LAYER (Tomohiro Shinagawa, Shinsuke Miyajima, Akira Yamada, Makoto Konagai)

    18th International Photovoltaic Science and Engineering, Science City Convention Center, Kolkata, India, Jan 19-23, 2009  2009 

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  • Amorphous Silicon Carbide Solar Cells with High Open-Circuit Voltage for Multi-Junction Cell Applications (Yunaz Ihsan, Hiroshi Nagashima, Kazuhiro Hikida, Shinsuke Miyajima, Akira Yamada, Makoto Konagai)

    18th International Photovoltaic Science and Engineering, Science City Convention Center, Kolkata, India, Jan 19-23, 2009  2009 

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  • Preparation of Germanium Quantum Dot in Amorphous Silicon Carbide Matrix for 3rd Generation Photovoltaics

    E-MRS Spring Meeting (Symposium B, Inorganic and Nanostructured Photovoltaics (INP)), Congress Center, Strasbourg, France, June 8-12, 2009  2009 

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  • Properties of Si/SiO2 superlattice nanodisc array prepared by nanosphere lithography

    Takaya Higa, Ryousuke Ishikawa, Shinsuke Miyajima, Makoto Konagai, Makoto Konagai

    Proceedings of SPIE - The International Society for Optical Engineering  2014.1 

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    © 2014 SPIE. We fabricated nanostructured Si/SiO2 superlattice films for solar cell appliactions. The Si/SiO2 superlattice films were fabricated by thermal annealing of a-Si/SiO2 superlattice films. TEM observations revealed the existence of nanocrystalline Si in the Si layer. This sample showed photoluminescence spectrum with peak energy at around 1.5 eV. It was also found that the defect density in the superlattice was reduced by using forming gas annealing. Applying nanosphere lithography and reactive ion etching, we successfully prepared nanostructures on the surface of the superlattice. We also compared the optical properties with the simulation results using rigorous coupled wave analysis.

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  • (招待講演) 微結晶SiC:H薄膜の作製とその物性 (宮島晋介, 屋敷保聡, 山田明, 小長井誠)

    第31回 アモルファスセミナー:若手セッション、平成16年11月24日、辰口温泉 まつさき (石川県)  2004 

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  • (招待講演) 微結晶(ナノ結晶)SiC:Hを用いたヘテロ接合結晶シリコン太陽電池 (宮島晋介, 山田明, 小長井誠)

    第53回応用物理学関係連合講演会  2006 

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  • (Invited) Properties of Nanocrystalline 3C-SiC:H and SiC:Ge:H Films Deposited at Low Substrate Temperatures (Shinsuke Miyajima, Akira Yamada, Makoto Konagai)

    2006 MRS spring meeting, April 17-21, 2006 (Symposium A SESSION A4:Growth Techniques and Interface Studies, A4.1)  2006 

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  • (招待講演) 高Vocを目指したSi1-xCx:HおよびSi1-xOx:H膜のSi系薄膜太陽電池への応用 (宮島晋介, Ihsanul Afdi Yunaz, Sorapong Inthisang, 山田明, 小長井誠)

    第35回アモルファスセミナー, 2008年10月16-17日, 京都ガーデンパレス  2008 

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  • HYDROGENATED ALUMINUM OXIDE FILMS DEPOSITED BY PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION FOR PASSIVATION OF P-TYPE CRYSTALLINE SILICON (Shinsuke Miyajima, Junpei Irikawa, Akira Yamada, Makoto Konagai)

    23rd European Photovoltaic Solar Energy Conference, Sep. 1-5, 2008, Feria Valencia, Valencia, Spain  2008 

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  • (招待講演) Cat-CVD(HW-CVD)法の結晶Si太陽電池への応用 (宮島晋介, 山田明, 小長井誠)

    第5回Cat-CVD研究会, 2008年6月20-21日, 神奈川工科大学  2008 

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  • [15a-P06-13] スパッタとスピンオンドーピングにより形成したTOPCon型太陽電池プリカーサの作製

    大森 康生, Li Shasha, 宮島 晋介

    第72回応用物理学会春季学術講演会  2025.3 

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  • [17p-K501-7] Cu/CuO混合ターゲットを用いたDCスパッタによるCu2O膜のキャリア拡散長の改善

    関口 晨雄, 畑川 健勝, 宮島 晋介

    第72回応用物理学会春季学術講演会  2025.3 

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  • [15a-P06-7] LBIC法による平板型太陽光集光器(PASC)の導光性評価

    藤本 敬太, 宮島 晋介

    第72回応用物理学会春季学術講演会  2025.3 

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    Country:Japan  

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  • Heterojunction Crystalline Silicon Solar Cells Using Nanocrystalline Cubic Silicon Carbide Emitter Invited International conference

    Shinsuke Miyajima

    THE TWENTY FIRST INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 14)  2014.7 

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  • Status of Silicon Nanowire Thin Film Solar Cells Invited International conference

    Shinsuke Miyajima

    The 6th IEEE international Nanoelectronics Conference 2014 (IEEE INEC2014)  2014.7 

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  • Optimum Design of Antireflection coating for Heterojunction Solar Cell with nc-3C-SiC:H Emitter

    ATETO ERICK OMONDI, KONAGAI MAKOTO, MIYAJIMA SHINSUKE

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)  2014.9 

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  • Antireflective Effect of Wide-gap Heterojunction Emitter for Crystalline Silicon Heterojunction solar cell International conference

    Ateto Erick Omondi, Kazuki Shimizu, Makoto Konagai, Shinsuke Miyajima

    6th World Conference on Photovoltaic Energy Conversion (WCPEC-6)  2014.11 

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  • Heterojunction crystalline silicon solar cells using nanocrystalline cubic silicon carbide emitter

    Shinsuke Miyajima

    Proceedings of AM-FPD 2014 - The 21st International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials  2014.1 

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    Heterojunction crystalline silicon solar cells using a hydrogenated nanocrystalline cubic silicon carbide emitter has been developed. The use of the widegap emitter significantly reduced the optical absorption loss in the emitter region. The solar cells also showed high open circuit voltage of above 0.718 V. This high open circuit voltage indicates that the recombination velocity at the interface of crystalline silicon/hydrogenated nanocrystalline cubic silicon carbide emitter is quite low. © 2014 JSAP.

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Industrial property rights

  • 酸化物半導体装置及びその製造方法

    湯田 洋平, 綿引 達郎, 宮島 晋介, 滝口 雄貴

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    Applicant:三菱電機株式会社, 国立大学法人東京工業大学

    Application no:特願2020-538314  Date applied:2019.8

    Patent/Registration no:特許第6980116号  Date registered:2021.11 

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  • 酸化物半導体装置及びその製造方法

    湯田 洋平, 綿引 達郎, 宮島 晋介, 滝口 雄貴

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    Applicant:三菱電機株式会社, 国立大学法人東京工業大学

    Application no:JP2019031483  Date applied:2019.8

    Publication no:WO2020-039971  Date published:2020.2

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  • 電力変換装置

    中山 暁斗, 石井 佑季, 地道 拓志, 赤木 泰文, 宮本 智之, 宮島 晋介

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    Applicant:三菱電機株式会社, 国立大学法人東京工業大学

    Application no:特願2018-115223  Date applied:2018.6

    Announcement no:特開2019-221030  Date announced:2019.12

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  • 電力変換装置

    中山 暁斗, 石井 佑季, 地道 拓志, 赤木 泰文, 宮本 智之, 宮島 晋介

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    Applicant:三菱電機株式会社, 国立大学法人東京工業大学

    Application no:特願2018-115223  Date applied:2018.6

    Announcement no:特開2019-221030  Date announced:2019.12

    Patent/Registration no:特許第7012609号  Date registered:2022.1 

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  • シリコン電極とその製造方法

    小野 陽子, 渦巻 裕也, 小松 武志, 宮島 晋介

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    Applicant:日本電信電話株式会社, 国立大学法人東京工業大学

    Application no:特願2018-112696  Date applied:2018.6

    Announcement no:特開2019-216184  Date announced:2019.12

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  • シリコン電極とその製造方法

    小野 陽子, 小松 武志, 宮島 晋介, 山田 明

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    Applicant:日本電信電話株式会社, 国立大学法人東京工業大学

    Application no:特願2017-122170  Date applied:2017.6

    Announcement no:特開2019-007039  Date announced:2019.1

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  • シリコン電極とその製造方法

    小野 陽子, 小松 武志, 宮島 晋介, 山田 明

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    Applicant:日本電信電話株式会社, 国立大学法人東京工業大学

    Application no:特願2017-122170  Date applied:2017.6

    Announcement no:特開2019-007039  Date announced:2019.1

    Patent/Registration no:特許第6865435号  Date registered:2021.4 

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  • 電力用半導体装置

    綿引 達郎, 湯田 洋平, 古川 彰彦, 宮島 晋介, 滝口 雄貴

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    Applicant:三菱電機株式会社, 国立大学法人東京工業大学

    Application no:JP2017005286  Date applied:2017.2

    Publication no:WO2018-150451  Date published:2018.8

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  • 電力用半導体装置

    綿引 達郎, 湯田 洋平, 古川 彰彦, 宮島 晋介, 滝口 雄貴

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    Applicant:三菱電機株式会社, 国立大学法人東京工業大学

    Application no:特願2019-500059  Date applied:2017.2

    Patent/Registration no:特許第6667712号  Date registered:2020.2 

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  • 光触媒装置および光触媒反応装置

    小野 陽子, 小松 武志, 宮島 晋介, 山田 明

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    Applicant:日本電信電話株式会社, 国立大学法人東京工業大学

    Application no:特願2016-119573  Date applied:2016.6

    Announcement no:特開2017-221911  Date announced:2017.12

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  • パッシベーション膜の製造方法、パッシベーション膜、それを用いた太陽電池素子

    稲葉 孝一郎, 豊田 浩司, 中 俊雄, 宮島 晋介

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    Applicant:東ソー・ファインケム株式会社

    Application no:特願2015-046592  Date applied:2015.3

    Announcement no:特開2016-167524  Date announced:2016.9

    Patent/Registration no:特許第6498967号  Date registered:2019.3 

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  • パッシベーション膜の製造方法、パッシベーション膜、それを用いた太陽電池素子

    稲葉 孝一郎, 豊田 浩司, 中 俊雄, 宮島 晋介

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    Applicant:東ソー・ファインケム株式会社

    Application no:特願2015-046592  Date applied:2015.3

    Announcement no:特開2016-167524  Date announced:2016.9

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  • アルミニウム含有酸化物薄膜の製造方法およびアルミニウム含有酸化物薄膜

    高橋 清, 宮島 晋介

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    Applicant:日本アルキルアルミ株式会社, 国立大学法人東京工業大学

    Application no:特願2015-021329  Date applied:2015.2

    Announcement no:特開2016-141882  Date announced:2016.8

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  • 半導体素子の製造方法、半導体素子および透明導電膜

    石川 亮佑, 宮島 晋介, 小長井 誠

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    Applicant:国立研究開発法人科学技術振興機構, 国立大学法人東京工業大学

    Application no:特願2014-055402  Date applied:2014.3

    Announcement no:特開2015-179695  Date announced:2015.10

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  • 結晶性SiC膜の製造方法

    小長井 誠, 山田 明, 宮島 晋介

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    Applicant:財団法人理工学振興会

    Application no:特願2004-369581  Date applied:2004.12

    Announcement no:特開2006-176811  Date announced:2006.7

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Awards

  • WCPEC poster award (3rd World Conference on Photovoltaic Energy Conversion, Osaka Japan, May 11-18, 2003)

    2003  

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  • WCPEC poster award (3rd World Conference on Photovoltaic Energy Conversion, Osaka Japan, May 11-18, 2003)

    2003  

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  • 第15回(2003年秋季) 応用物理学会 講演奨励賞

    2003  

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    Country:Japan

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  • 15th Lecture encouragement prize, The Japan Society of Applied Physics

    2003  

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Research Projects

  • ナノ結晶GaN/CsPbBr3-xClxヘテロ接合のキャリア輸送特性の解明

    Grant number:22K04195  2022.4 - 2025.3

    日本学術振興会  科学研究費助成事業  基盤研究(C)

    宮島 晋介

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    Grant amount:\4030000 ( Direct Cost: \3100000 、 Indirect Cost:\930000 )

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  • 異種材料間接合の低抵抗化とそのデバイス応用

    Grant number:22K04202  2022.4 - 2025.3

    日本学術振興会  科学研究費助成事業  基盤研究(C)

    内田 史朗, 宮島 晋介

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    Grant amount:\4160000 ( Direct Cost: \3200000 、 Indirect Cost:\960000 )

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  • Development of high efficiency optical wireless power transmission system using multijunction perovskite solar cells

    Grant number:17H03532  2017.4 - 2020.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (B)

    Shinsuke Miyajima

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    Grant amount:\8970000 ( Direct Cost: \6900000 、 Indirect Cost:\2070000 )

    Optical power converters with widegap perovskite materials were investigated to develop high efficiency optical wireless power transmission system. We optimized the structure of a tandem optical power converter with high output voltage by using device simulation. We also investigated CsPbBr3 and CH3NH3PbBr3 as light absorbing materials for the optical power converter. We successfully deposited CsPbBr3 and CH3NH3PbBr3 films with photoconductivity of about 0.0001 S/cm and photosensitivity of about 10000. A relatively high conversion efficiency of about 20% for a blue LED light source was realized by using these materials. On the other hand, our study showed that it is important to use a hole transport material with high thermal stability to realize the tandem optical power converter.

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  • Development of monojunction Cu2O devices for water splitting devices

    Grant number:15K14299  2015 - 2017

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Challenging Exploratory Research

    Miyajima Shinsuke

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    Authorship:Principal investigator  Grant type:Competitive

    Grant amount:\3770000 ( Direct Cost: \2900000 、 Indirect Cost:\870000 )

    We investigated properties of Cu2O films for the development of water splitting devices with Cu2O homojunction. Although we investigated the effect of chlorine doping and deposition conditions to prepare n-type Cu2O, we could not realize clear n-type conductivity and homojunciton devices. However, we obtained big progresses in the improvement of p-type Cu2O and the device fabrication. We demonstrated that thermal annealing at 150℃ significantly improves hole mobility of electrochemically deposited p-type Cu2O. By using this p-type Cu2O, we successfully fabricated a ZnO/Cu2O heterojunction device with good long wavelength response.

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  • Development of high efficiency perovskite/Si tandem solar cells

    Grant number:26709075  2014 - 2016

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Young Scientists (A)

    Miyajima Shinsuke

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    Authorship:Principal investigator  Grant type:Competitive

    Grant amount:\12870000 ( Direct Cost: \9900000 、 Indirect Cost:\2970000 )

    To realize high efficiency solar cell, fabrication techniques of perovskite / crystalline silicon tandem solar cell were investigated. We developed a device simulation model to optimize the thickness of the perovskite layer. We also investigated the properties of CH3NH3PbI3-xClx films deposited by the vapor evaporation to optimize the evaporation condition. We finally obtained a CH3NH3PbI3-xClx film with a carrier lifetime of 99 ns (PL measurement) and a photoconductivity (under illumination with a solar simulator) of 0.0005 S/cm. We also developed a tunnel recombination layer that connects the top cell and the bottom cell of a tandem solar cell, and clarified that the stack structure of n-type microcrystalline silicon and p-type nitrogen doped CuO2 shows good characteristics.

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  • Development of High Efficiency Thin-Substrate Silicon Solar Cells with Controlled Nano-Interface

    Grant number:22246001  2010.4 - 2014.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

    KONAGAI Makoto

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    Grant amount:\40690000 ( Direct Cost: \31300000 、 Indirect Cost:\9390000 )

    Silicon heterojunction solar cells have the potential to achieve high conversion efficiencies. In order to achieve high open circuit voltages, passivation of dangling bonds on the c-Si surface is indispensable. One of the most used passivation materials for heterojunction solar cells is the hydrogenated amorphous silicon (a-Si:H). a-Si:H is known to have a high passivation quality, but it shows harmful epitaxial growth when deposited at relatively high deposition temperatures, deteriorating the passivation effect. In this study wide-bandgap amorphous silicon oxide (a-SiO:H) or nano-crystalline 3C-SiC is applied as an alternative to the conventional a-Si:H to suppress the epitaxial growth, resulting with a very low surface recombination velocity. Up to now, an efficiency of 20.1 % has been achieved with a high open circuit voltage of 708 mV, and the original goals have been met.

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  • Development of high-efficiency solar cells using multi-exciton-generation

    Grant number:20760011  2008 - 2009

    Ministry of Education, Culture, Sports, Science and Technology  Grants-in-Aid for Scientific Research(若手研究(B))  若手研究(B)

    Shinsuke MIYAJIMA

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    Authorship:Principal investigator  Grant type:Competitive

    Grant amount:\4030000 ( Direct Cost: \3100000 、 Indirect Cost:\930000 )

    A p-i-n structure with Ge quantum dot superlattice was proposed to detect multi-exciton-generation in solid materials. Amorphous SiCO/Ge quantum dot superlattices were successfully developed by thermal annealing of an amorphous superlattice. Although spin density of the superlattice can be reduced on the order of 10^<18>cm^<-3>, further reduction is required to detect multi-exciton generation.

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  • Study of Novel Silicon Heterojunction Solar Cells with Controlled Fixed Charge

    Grant number:19206001  2007 - 2009

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (A)

    KONAGAI Makoto, YAMADA Akira, MIYAJIMA Shinsuke, ABE Katsuya

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    Grant amount:\48620000 ( Direct Cost: \37400000 、 Indirect Cost:\11220000 )

    Novel Si heterojunction solar cells were proposed to improve the energy conversion efficiency of conventional Si solar cells. For p-type Si solar cells with a widegap n-type micorcystalline 3C-SiC as an emitter layer and with an amorphous AlO as a backside passivation layer, an efficiency of 16% was demonstrated for the first time in the world. Furthermore, very high efficiency of 18.5% has been achieved for a novel solar cell with a configuration of n-type microcrystalline Si/undoped-SiO/p-type Si wafer/p-type microcrystalline SiO back contact. Almost all research targets were met by FY2009.

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Teaching Experience

  • Introduction to Photovoltaics

    2025.6 Institution:Institute of Science Tokyo

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  • 光物性基礎とデバイス応用

    2024.6 Institution:東京科学大学

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  • 半導体物性

    2025.6 Institution:東京科学大学

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  • 光物性基礎とデバイス応用

    2024.6 - 2024.8 Institution:東京工業大学

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  • Introduction to Photovoltaics

    2016.6 - 2024.8 Institution:Tokyo Institute of Technology

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  • 半導体物性

    2012.12 - 2024.8 Institution:東京工業大学

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