Updated on 2026/03/13

写真a

 
KODERA TETSUO
 
Organization
School of Engineering Associate Professor
Title
Associate Professor
External link

News & Topics

Research Areas

  • Nanotechnology/Materials / Nanostructural physics

Education

  • The University of Tokyo   Graduate School, Division of Science   Department of Physics

    - 2007

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  • The University of Tokyo

    - 2007

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    Country: Japan

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Research History

  • -:東京工業大学 量子ナノエレクトロニクス研究センター 助教

    2009

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  • -:Tokyo Institute of Technoloby Quantum Nanoelectronics Research Center Assistant Professor

    2009

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  • :東京大学 ナノ量子情報エレクトロニクス研究機構 特任助教

    2007 - 2009

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  • :the University of Tokyo Institute for Nano Quantum Information Electronics Research Associate

    2007 - 2009

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Professional Memberships

Papers

  • Multi-bit state discrimination using machine learning for IQ-encoded spin-qubit readout

    Duanlian Zhang, Naoya Negami, Raisei Mizokuchi, Shunsuke Ota, Riku Wada, Tetsuo Kodera

    Japanese Journal of Applied Physics   2026.3

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ae4520

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  • Active silicon interposer with integrated CMOS selector circuits for silicon qubits

    Kazuma Higashimomo, Raisei Mizokuchi, Misato Taguchi, Takuji Miki, Makoto Nagata, Tetsuo Kodera

    Japanese Journal of Applied Physics   2026.2

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ae3aa9

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  • Detection of two-level fluctuators in a silicon quantum dot under relaxed noise sensitivity constraints

    Ryutaro Matsuoka, Raisei Mizokuchi, Jun Yoneda, Tetsuo Kodera

    Applied Physics Express   2026.2

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1882-0786/ae420b

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  • Improved readout accuracy of a silicon spin qubit via log-likelihood ratio

    R. Mizokuchi, R. Wada, R. Matsuoka, S. Ota, I. Yanagi, T. Mine, R. Tsuchiya, D. Hisamoto, H. Mizuno, T. Kodera

    Japanese Journal of Applied Physics   2026.1

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/ae2d60

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  • Generation of a single-cycle surface acoustic wave pulse on LiNbO3 for application to thin-film materials

    Koji Fujiwara, Shunsuke Ota, Tetsuo Kodera, Yuma Okazaki, Nobu-Hisa Kaneko, Nan Jiang, Yasuhiro Niimi, Shintaro Takada

    Applied Physics Letters   2025.7

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    Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0270260

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  • Quantum algorithm compiler for architectures with semiconductor spin qubits

    M.Tadokoro, R. Matsuoka, T. Kodera

    EPJ Quantum Technology   Vol. 12 ( No. 81 (2025) )   2025.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1140/epjqt/s40507-025-00384-9

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  • Two-dimensional mapping method for evaluation of phase-locked loop signal in cryo-CMOS qubit control circuits Reviewed International journal

    Ryutaro Matsuoka, Yusuke Wachi, Ryuta Tsuchiya, Hiroyuki Mizuno, Tetsuo Kodera

    Japanese Journal of Applied Physics   2025.7

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.35848/1347-4065/adeb23

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  • Inductor-shunted matching circuits for enhanced frequency multiplexibility in RF single electron transistors in silicon Reviewed International journal

    S. Nishiyama, R. Mizokuchi, R. Matsuda, J. Kamioka, J. Yoneda, T. Kodera

    Applied Physics Letters   126   094001-1 - 094001-6   2025.3

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0249938

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  • Environment model construction toward auto-tuning of quantum dot devices based on model-based reinforcement learning Reviewed International journal

    Chihiro Kondo, Raisei Mizokuchi, Jun Yoneda, Tetsuo Kodera

    APL Machine Learning   Vol. 3   016114-1 - 016114-6   2025.3

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0251336

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  • シリコン量子コンピュータに向けた基盤技術 Invited Reviewed

    小寺哲夫

    表面と真空   68 ( 3 )   149 - 154   2025.3

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    Authorship:Lead author, Last author, Corresponding author   Language:Japanese   Publishing type:Research paper (scientific journal)  

    DOI: 10.1380/vss.68.149

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  • Single-electron charge sensor self-aligned to a quantum dot array by double-gate patterning process Reviewed International journal

    Takuma Kuno, Takeru Utsugi, Ryuta Tsuchiya, Noriyuki Lee, Toshiyuki Mine, Itaru YANAGI, Raisei Mizokuchi, Jun Yoneda, Tetsuo KODERA, Shinichi Saito, Digh Hisamoto, Hiroyuki Mizuno

    Japanese Journal of Applied Physics   64   011001-1 - 011001-7   2025.1

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP Publishing  

    Abstract

    The high sensitivity of a single electron transistor (SET) is essential to faithfully identify the number of electrons in a quantum dot (QD) towards a silicon-based quantum computer. The sensitivity depends on the critical dimension between the SET and the QD, which is limited by the resolution of the electron beam lithography and the layer-to-layer alignment accuracy. Here, we report integration of an SET charge sensor with a QD array by repeating the self-aligned double-gate patterning processes. This fabrication technique allowed us to place the SET adjacent to the QD array beyond the lithography resolution, enabling sensitive charge sensing. We confirm that our device can detect single electrons in the QD and demonstrate real-time detections of electron tunneling by monitoring the SET current.

    DOI: 10.35848/1347-4065/ada348

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    Other Link: https://iopscience.iop.org/article/10.35848/1347-4065/ada348/pdf

  • Stabilization of a silicon double quantum dot based on a multi-dimensional gradient descent technique Reviewed International journal

    Chutian Wen, Hiroki Takahashi, Sayyid Irsyadul Ibad, Shimpei Nishiyama, Kimihiko Kato, Yongxun LIU, Shigenori Murakami, Takahiro MORI, Raisei Mizokuchi, Jun Yoneda, Tetsuo KODERA

    Applied Physics Express   18   015001-1 - 015001-4   2025.1

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP Publishing  

    Abstract

    With a view to long-term qubit device operation, we report a method to stabilize a silicon double quantum dot against slow drift in a two-dimensional gate-voltage space based on a current gradient-based feedback technique. We demonstrate that, unlike conventional single-axis feedback schemes, our method can maintain the double-dot potential configuration. We measure a feedback bandwidth of up to 300 mHz, consistent with the sampling rate and the digital filter cutoff frequency used in the experiment.

    DOI: 10.35848/1882-0786/ad9af8

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    Other Link: https://iopscience.iop.org/article/10.35848/1882-0786/ad9af8/pdf

  • Spin-blockade and state lifetimes of many-hole spin states in silicon quantum dots Reviewed International journal

    Chihiro Kondo, Raisei Mizokuchi, Go Sakamoto, Ryuta Tsuchiya, Toshiyuki Mine, Digh Hisamoto, Hiroyuki Mizuno, Jun Yoneda, Tetsuo KODERA

    Japanese Journal of Applied Physics   64   01SP09-1 - 01SP09-5   2025.1

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    Authorship:Last author, Corresponding author   Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP Publishing  

    Abstract

    Hole spins in silicon quantum dots (QDs) are a promising candidate for fault-tolerant quantum computing. To achieve high-fidelity readout and high coherence required for fault tolerance, the evaluation of spin-blockade and state lifetimes is important because they can limit the qubit fidelities. In this study, we characterize these two figures of merit of manyhole qubits in silicon QDs. We report a spin-blockade lifetime of 5.1 µs, which is comparable with the values reported previously, and a spin-state lifetime of 0.91 ms, which is longer than the one measured in a few-hole silicon QD in a previous study. We furthermore provide insights into a many-hole spin state based on the estimated tunneling rate ratio.

    DOI: 10.35848/1347-4065/ad9a71

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    Other Link: https://iopscience.iop.org/article/10.35848/1347-4065/ad9a71/pdf

  • Trends and prospects for semiconductor qubit research Reviewed International journal

    T. Kodera

    JSAP Rev.   Vol. 2024 ( 240101-1-11 )   2024.3

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  • Cryogenic flip-chip interconnection for silicon qubit devices Reviewed International journal

    Tokio Futaya, Raisei Mizokuchi, Misato Taguchi, Takuji Miki, Makoto Nagata, Jun Yoneda, Tetsuo Kodera

    Japanese Journal of Applied Physics   Vol. 63 ( 03SP64 )   2024.3

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    DOI: 10.35848/1347-4065/ad27bd

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  • On-demand single-electron source via single-cycle acoustic pulses Reviewed International journal

    S. Ota, J. Wang, H. Edlbauer, Y. Okazaki, S. Nakamura, T. Oe, A. Ludwig, A.D. Wieck, H. Sellier, C. Bäuerle, N.-H. Kaneko, T. Kodera, S. Takada

    Phys. Rev. Applied   Vol. 21 ( 024034-1-8 )   2024.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1103/PhysRevApplied.21.024034

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  • Suppression of electromagnetic crosstalk by differential excitation for SAW generation Reviewed International journal

    S. Ota, Y. Okazaki, S. Nakamura, T. Oe, H. Sellier, C. Bäuerle, N.-H. Kaneko, T. Kodera, S. Takada

    Appl. Phys. Express   Vol. 17 ( 022002-1-6 )   2024.2

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    DOI: 10.35848/1882-0786/ad253f

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  • Single-electron transistor operation of a physically defined silicon quantum dot device fabricated by electron beam lithography employing a nagative-tone resist Reviewed International journal

    Shimpei Nishiyama, K. Kato, R. Mizokuchi, J. Yoneda, T. Kodera, T. Mori, Y. Liu

    IEICE Transactions on Electronics   vol. E106-C ( No. 10 )   2023.10

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    DOI: 10.1587/transele.2022FUS0002

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  • Coulomb-mediated antibunching of an electron pair surfing on sound

    Junliang Wang, Hermann Edlbauer, Aymeric Richard, Shunsuke Ota, Wanki Park, Jeongmin Shim, Arne Ludwig, Andreas D. Wieck, Heung-Sun Sim, Matias Urdampilleta, Tristan Meunier, Tetsuo Kodera, Nobu-Hisa Kaneko, Hermann Sellier, Xavier Waintal, Shintaro Takada, Christopher Bäuerle

    Nature Nanotechnology   18 ( 7 )   721 - 726   2023.5

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    Publishing type:Research paper (scientific journal)   Publisher:Springer Science and Business Media LLC  

    DOI: 10.1038/s41565-023-01368-5

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    Other Link: https://www.nature.com/articles/s41565-023-01368-5

  • Mixed-mode RF reflectometry of quantum dots for reduction of crosstalk effects

    M. Machida, R. Mizokuchi, J. Yoneda, T. Tomura, T. Kodera

    Japanese Journal of Applied Physics   Vol. 62 ( SC1086 )   2023.3

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:{IOP} Publishing  

    <jats:title>Abstract</jats:title>
    <jats:p>RF reflectometry is a promising technique for spin qubit readout, suitable for large-scale integrated qubit systems by combination with multiplexing techniques and gate-based readout. However, one of the challenges in such systems would be that the accuracy of RF readout of individual qubits can be degraded by crosstalk among dense RF readout lines. In this study, we propose a mixed-mode RF reflectometry to reduce the effect of the crosstalk and verify its effectiveness by electromagnetic field simulations. The results of the simulations show the possibility of suppressing the influence of crosstalk by using mixed modes.</jats:p>

    DOI: 10.35848/1347-4065/acbb0e

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  • Evaluation of a physically defined silicon quantum dot for design of matching circuit for RF reflectometry charge sensing

    J. Kamioka, R. Matsuda, R. Mizokuchi, J. Yoneda, T. Kodera

    AIP Advances   Vol. 13 ( Issue 3 )   2023.3

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    DOI: 10.1063/5.0141092

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  • シリコン量子コンピュータにおける研究開発への取り組みと実現に必要な周辺技術

    小寺哲夫

    6章   2023.1

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    Language:Japanese   Publisher:量子技術の実用化と研究開発業務への導入方法  

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  • Single-electron pump in a quantum dot array for silicon quantum computers

    T. Utsugi, N. Lee, R. Tsuchiya, R. Tsuchiya, T. Mine, R. Mizokuchi, J. Yoneda, T. Kodera, S. Saito, Hisamoto, H. Mizuno

    Jap.J.Appl.Phys. Suppl   Vol. 62 ( SC1020 )   2023.1

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    DOI: 10.35848/1347-4065/acac36

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  • Generation of a Single-Cycle Acoustic Pulse: A Scalable Solution for Transport in Single-Electron Circuits

    Junliang Wang, Shunsuke Ota, Hermann Edlbauer, Baptiste Jadot, Pierre-André Mortemousque, Aymeric Richard, Yuma Okazaki, Shuji Nakamura, Arne Ludwig, Andreas D. Wieck, Matias Urdampilleta, Tristan Meunier, Tetsuo Kodera, Nobu-Hisa Kaneko, Shintaro Takada, Christopher Bäuerle

    Physical Review X   12 ( 3 )   2022.9

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    Publishing type:Research paper (scientific journal)   Publisher:American Physical Society (APS)  

    DOI: 10.1103/physrevx.12.031035

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    Other Link: http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevX.12.031035/fulltext

  • シリコン量子ビット技術と集積化に向けた研究動向

    溝口 来成, 米田 淳, 小寺 哲夫

    電子情報通信学会論文誌. C, エレクトロニクス   2022.7

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    Language:Japanese  

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  • The functions of a reservoir ofset voltage applied to physically defned p channel Si quantum dots

    S. Nishiyama, K. Kato, M. Kobayashi, R. Mizokuchi, T. Mori, T. Kodera

    Sci. Rep.   12 ( 10111-1-6 )   2022.6

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  • X-Band GaN Chipsets for Cost-Effective 20W T/R Modules

    J.Kamioka, Y. Kawamura, R. Komaru, M. Hangai, Y. Kamo, T. Kodera, S.Shinjo

    IEICE Transactions on Electronics   ( Issue 5 )   2022.5

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  • 16 x 8 quantum dot array operation at cryogenic temperatures

    N. Lee, R. Tsuchiya, Y. Kanno, T. Mine, Y. Sasago, G. Shinkai, R. Mizokuchi, J. Yoneda, T. Kodera, C. Yoshimura

    Japanese Journal of Applied Physics   Vol. 61 ( SC1040 )   2022.2

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    DOI: 10.35848/1347-4065/ac4c07

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  • Designs for a two-dimensional Si quantum dot array with spin qubit addressability

    Masahiro Tadokoro, Takashi Nakajima, Takashi Kobayashi, Kenta Takeda, Akito Noiri, Kaito Tomari, Jun Yoneda, Seigo Tarucha, Tetsuo Kodera

    Scientific Reports   11 ( 1 )   2021.12

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    <title>Abstract</title>Electron spins in Si are an attractive platform for quantum computation, backed with their scalability and fast, high-fidelity quantum logic gates. Despite the importance of two-dimensional integration with efficient connectivity between qubits for medium- to large-scale quantum computation, however, a practical device design that guarantees qubit addressability is yet to be seen. Here, we propose a practical 3 × 3 quantum dot device design and a larger-scale design as a longer-term target. The design goal is to realize qubit connectivity to the four nearest neighbors while ensuring addressability. We show that a 3 × 3 quantum dot array can execute four-qubit Grover’s algorithm more efficiently than the one-dimensional counterpart. To scale up the two-dimensional array beyond 3 × 3, we propose a novel structure with ferromagnetic gate electrodes. Our results showcase the possibility of medium-sized quantum processors in Si with fast quantum logic gates and long coherence times.

    DOI: 10.1038/s41598-021-98212-4

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    Other Link: https://www.nature.com/articles/s41598-021-98212-4

  • In-flight distribution of an electron within a surface acoustic wave

    Hermann Edlbauer, Junliang Wang, Shunsuke Ota, Aymeric Richard, Baptiste Jadot, Pierre-André Mortemousque, Yuma Okazaki, Shuji Nakamura, Tetsuo Kodera, Nobu-Hisa Kaneko, Arne Ludwig, Andreas D. Wieck, Matias Urdampilleta, Tristan Meunier, Christopher Bäuerle, Shintaro Takada

    Applied Physics Letters   119 ( 11 )   2021.9

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    <jats:p>Surface acoustic waves (SAWs) have large potential to realize quantum-optics-like experiments with single flying electrons employing their spin or charge degree of freedom. For such quantum applications, highly efficient trapping of the electron in a specific moving quantum dot (QD) of a SAW train plays a key role. Probabilistic transport over multiple moving minima would cause uncertainty in synchronization that is detrimental for coherence of entangled flying electrons and in-flight quantum operations. It is thus of central importance to identify the device parameters enabling electron transport within a single SAW minimum. A detailed experimental investigation of this aspect is so far missing. Here, we fill this gap by demonstrating time-of-flight measurements for a single electron that is transported via a SAW train between distant stationary QDs. Our measurements reveal the in-flight distribution of the electron within the moving acousto-electric quantum dots of the SAW train. Increasing the acousto-electric amplitude, we observe the threshold necessary to confine the flying electron at a specific, deliberately chosen SAW minimum. Investigating the effect of a barrier along the transport channel, we also benchmark the robustness of SAW-driven electron transport against stationary potential variations. Our results pave the way for highly controlled transport of electron qubits in a SAW-driven platform for quantum experiments.</jats:p>

    DOI: 10.1063/5.0062491

    DOI: 10.1103/physrevx.12.031035_references_DOI_BUymPVf4c1WTHHkfsoCmj5sc0Do

    CiNii Research

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    Other Link: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18H05258/

  • RF reflectometry for readout of charge transition in a physically defined p-channel MOS silicon quantum dot

    Sinan Bugu, Shimpei Nishiyama, Kimihiko Kato, Yongxun Liu, Takahiro Mori, Tetsuo Kodera

    Japanese Journal of Applied Physics   60   2021.5

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:IOP Publishing Ltd  

    DOI: 10.35848/1347-4065/abeac1

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  • 4.2K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined p-channel Silicon Quantum Dot

    Sinan Bugu, Shimpei Nishiyama, Kimihiko Kato, Yongxun Liu, Shigenori Murakami, Takahiro Mori, Thierry Ferrus, Tetsuo Kodera

    Sci. Rep.   2021.5

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  • シリコン量子ドット単一キャリアスピンの高周波反射計測

    米田淳, 溝口来成, 小寺哲夫

    固体物理   2021.5

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  • Radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response

    R. Mizokuchi, S. Bugu, M. Hirayama, J. Yoneda, T.Kodera

    Sci. Rep   Vol. 11 ( 1 )   2021.3

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:Springer Science and Business Media {LLC}  

    DOI: 10.1038/s41598-021-85231-4

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  • Surpassing the classical limit in magic square game with distant quantum dots coupled to optical cavities

    S. Bugu, F. Ozaydin, T. Kodera

    Sci Rep   10   2020.12

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41598-020-79295-x

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  • Detection of tunneling events in physically defined silicon quantum dot using single-shot measurements improved by numerical treatments

    Raisei Mizokuchi, Masahiro Tadokoro, Tetsuo Kodera

    Applied Physics Express   13 ( 12 )   121004 - 121004   2020.12

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    Publishing type:Research paper (scientific journal)   Publisher:{IOP} Publishing  

    DOI: 10.35848/1882-0786/abc923

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  • Quantum non-demolition readout of an electron spin in silicon

    J. Yoneda, K. Takeda, A. Noiri, T. Nakajima, S. Li, J. Kamioka, T. Kodera, S. Tarucha

    Nature Communications   11 ( 1 )   2020.12

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    <title>Abstract</title>While single-shot detection of silicon spin qubits is now a laboratory routine, the need for quantum error correction in a large-scale quantum computing device demands a quantum non-demolition (QND) implementation. Unlike conventional counterparts, the QND spin readout imposes minimal disturbance to the probed spin polarization and can therefore be repeated to extinguish measurement errors. Here, we show that an electron spin qubit in silicon can be measured in a highly non-demolition manner by probing another electron spin in a neighboring dot Ising-coupled to the qubit spin. The high non-demolition fidelity (99% on average) enables over 20 readout repetitions of a single spin state, yielding an overall average measurement fidelity of up to 95% within 1.2 ms. We further demonstrate that our repetitive QND readout protocol can realize heralded high-fidelity (&gt;99.6%) ground-state preparation. Our QND-based measurement and preparation, mediated by a second qubit of the same kind, will allow for a wide class of quantum information protocols with electron spins in silicon without compromising the architectural homogeneity.

    DOI: 10.1038/s41467-020-14818-8

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    Other Link: http://www.nature.com/articles/s41467-020-14818-8

  • Temperature dependence of hole transport properties through physically defined silicon quantum dots

    N. Shimatani, Y. Yamaoka, R. Ishihara, A. Andreev, D. A. Williams, S. Oda, T. Kodera

    Applied Physics Letters   117 ( 9 )   094001 - 094001   2020.8

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:{AIP} Publishing  

    DOI: 10.1063/5.0010981

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  • Physically defined silicon triple quantum dots charged with few electrons in metal-oxide-semiconductor structures

    S. Hiraoka, K. Horibe, R. Ishihara, S. Oda, T. Kodera

    Applied Physics Letters   117   2020.8

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1063/5.0010906

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  • Enhancing electrostatic coupling in silicon quantum dot array by dual gate oxide thickness for large-scale integration

    N. Lee, R. Tsuchiya, G. Shinkai, Y. Kanno, T. Mine, T. Takahama, R. Mizokuchi, T. Kodera, D. Hisamoto, H. Mizuno

    Applied Physics Letters   116 ( 16 )   162106 - 162106   2020.4

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    Publishing type:Research paper (scientific journal)   Publisher:{AIP} Publishing  

    DOI: 10.1063/1.5141522

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  • Estimation of hole spin g-factors in p-channel silicon single and double quantum dots towards spin manipulation

    H. Wei, S. Mizoguchi, R. Mizokuchi, Tetsuo Kodera

    Jpn. J. Appl. Phys.   vol. 59   2020.2

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    DOI: 10.35848/1347-4065/ab6b7e

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  • Preparing Multipartite Entangled Spin Qubits via Pauli Spin Blockade

    S.Bugu, F. Ozaydin, T. Ferrus, T. Kodera

    Sci Rep   vol. 10   2020.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.1038/s41598-020-60299-6

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  • Pauli spin blockade in a silicon triangular triple quantum dot

    M. Tadokoro, R. Mizokuchi, T. Kodera

    Jpn. J. Appl. Phys.   vol. 59   2020.2

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    Language:English   Publishing type:Research paper (scientific journal)  

    DOI: 10.7567/1347-40651/ab65/cf

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  • Radio-Frequency-Detected Fast Charge Sensing in Undoped Silicon Quantum Dots

    A. Noiri, Kenta Takeda, Kenta Takeda, J. Yoneda, T. Nakajima, T. Kodera, S. Tarucha

    Nano Letters   20 ( 2 )   947 - 952   2020.1

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    Language:English   Publishing type:Research paper (scientific journal)   Publisher:American Chemical Society (ACS)  

    DOI: 10.1021/acs.nanolett.9b03847

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  • terahertz detection with an antenna-coupled highly-doped silicon quantum dot

    Takuya Okamoto, Naoki fujimura, Luca crespi, Tetsuo Kodera, Yukio Kawano

    Scientific Reports   2019.12

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    Nanostructured dopant-based silicon (Si) transistors are promising candidates for high-performance photodetectors and quantum information devices. For highly doped Si with donor bands, the energy depth of donor levels and the energy required for tunneling processes between donor levels are typically on the order of millielectron volts, corresponding to terahertz (THz) photon energy. Owing to these properties, highly doped Si quantum dots (QDs) are highly attractive as THz photoconductive detectors. Here, we demonstrate THz detection with a lithographically defined and highly phosphorus-doped Si QD. We integrate a 40 nm-diameter QD with a micrometer-scale broadband logarithmic spiral antenna for the detection of THz photocurrent in a wide frequency range from 0.58 to 3.11 THz. Furthermore, we confirm that the detection sensitivity is enhanced by a factor of ~880 compared to a QD detector without an antenna. These results demonstrate the ability of a highly doped-Si QD coupled with an antenna to detect broadband THz waves. By optimizing the dopant distribution and levels, further performance improvements are feasible.

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  • Dopant-induced terahertz resonance of a dopant-rich silicon quantum dot

    Takuya Okamoto, Naoki Fujimura, Tetsuo Kodera, Yukio Kawano

    2019 Silicon Nanoelectronics Workshop, SNW 2019   2019.6

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    Language:English   Publishing type:Research paper (international conference proceedings)   Publisher:Institute of Electrical and Electronics Engineers Inc.  

    DOI: 10.23919/SNW.2019.8782972

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  • Spin–orbit assisted spin funnels in DC transport through a physically defined pMOS double quantum dot

    M. Marx, J. Yoneda, T. Otsuka, K. Takeda, Y. Yamaoka, T. Nakajima, S. Li, A. Noiri, T. Kodera, S. Tarucha

    JPN. J. APPL. PHYS.   vol. 58 ( SB )   SBBI07 - SBBI07   2019.4

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    DOI: 10.7567/1347-4065/ab01d6

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  • Physically defined triple quantum dot systems in silicon on insulator

    R. Mizokuchi, S. Oda, T. Kodera

    Appl. Phys.   Lett. 114   2019.2

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    DOI: 10.1063/1.5063741

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  • Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift

    K. Takeda, J. Yoneda, T. Otsuka, T. Nakajima, M. R. Delbecq, G. Allison, Y. Hoshi, N. Usami, K. M. Itoh, S. Oda, T. Kodera, S. Tarucha

    npj Quantum Information   4,54   2018.10

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  • Fabrication and characterization of physically defined quantum dots on a boron-doped silicon-on-insulator substrate

    S. Mizoguchi, N. Shimatani, M. Kobayashi, T. Makino, Y. Yamaoka, T. Kodera

    Jpn. J. Appl. Phys.   57   2018.3

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  • A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9% Reviewed

    J. Yoneda, K. Takeda, T. Otsuka, T. Nakajima, M. R. Delbecq, G. Allison, T. Honda, T. Kodera, S. Oda, Y. Hoshi, N. Usami, K. M. Itoh, S. Tarucha

    Nature Nanotechnology   13 ( 2 )   102 - +   2017.12

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    DOI: 10.1038/s41565-017-0014-x

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  • Charge sensing and spin-related transport property of p-channel silicon quantum dots Reviewed

    Y. Yamaoka, K. Iwasaki, S. Oda, T. Kodera

    Jpn. J. Appl. Phys.   56 ( 4 )   2017.3

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  • First-principles calculation of a negatively charged boron-vacancy center in diamond

    A. Kunisaki, M. Muruganathan, H. Mizuta, T. Kodera

    Jpn. J. Appl. Phys.   56   2017.3

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  • Coupled Quantum Dots on SOI as Highly Integrated Si Qubits

    S. Oda, G. Yamahata, K. Horibe, T. Kodera

    Tech. Digest Of IEEE International Electron Devices Meeting (IEDM)   2016.12

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  • Quantum Information Processing in a Silicon-based System

    T. -Y. Yang, A. Andreev, Y. Yamaoka, T. Ferrus, T. Kodera, S. Oda, D. A. Williams

    Tech. Digest Of IEEE International Electron Devices Meeting (IEDM)   2016.12

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  • Electron transport through a single nanocrystalline silicon quantum dot between nanogap electrodes

    T. Sawada, T. Kodera, S. Oda

    Applied Physics Letters   109   2016.11

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  • Electron transport in physically-defined double quantum dots on a highly doped silicon-on-insulator substrate

    Y. Yamaoka, Shunri. Oda, T. Kodera

    Appl. Phys. Lett.   Vol. 109   2016.9

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  • A fault-tolerant addressable spin qubit in a natural silicon quantum dot

    K. Takeda, J. Kamioka, T. Otsuka, J. Yoneda, T. Nakajima, M. R. Delbecq, G. Allison, T. Kodera, Shunri Oda, S. Tarucha

    Science Advanced   vol. 2 ( No. 8 )   e1600694 - e1600694   2016.8

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    Fault-tolerant quantum computing requires high-fidelity qubits. This has been achieved in various solid-state systems, including isotopically purified silicon, but is yet to be accomplished in industry-standard natural (unpurified) silicon, mainly as a result of the dephasing caused by residual nuclear spins. This high fidelity can be achieved by speeding up the qubit operation and/or prolonging the dephasing time, that is, increasing the Rabi oscillation quality factor <italic>Q</italic> (the Rabi oscillation decay time divided by the π rotation time). In isotopically purified silicon quantum dots, only the second approach has been used, leaving the qubit operation slow. We apply the first approach to demonstrate an addressable fault-tolerant qubit using a natural silicon double quantum dot with a micromagnet that is optimally designed for fast spin control. This optimized design allows access to Rabi frequencies up to 35 MHz, which is two orders of magnitude greater than that achieved in previous studies. We find the optimum <italic>Q</italic> = 140 in such high-frequency range at a Rabi frequency of 10 MHz. This leads to a qubit fidelity of 99.6% measured via randomized benchmarking, which is the highest reported for natural silicon qubits and comparable to that obtained in isotopically purified silicon quantum dot–based qubits. This result can inspire contributions to quantum computing from industrial communities.

    DOI: 10.1126/sciadv.1600694

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  • Synthesis of Ge/Si core/shell nanowires with suppression of branch formation

    Tomohiro Noguchi, Marolop Simanullang, Zhengyu Xu, Koichi Usami, Tetsuo Kodera, Shunri Oda

    Applied Physics Express   Vol. 9 ( No. 5 )   55504 - 55504   2016.4

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    Ge/Si core/shell nanowires (Ge/Si-NWs) are promising materials for applications such as transistors, sensors, and thermoelectric devices. A major problem in the synthesis of Ge/Si-NWs using Au catalysts in conjunction with vapor–liquid–solid chemical vapor deposition is the formation of branched Si nanowires on the surface of Ge nanowires because of the migration of Au nanoparticles that serve as seeds. Based on an analysis of the Au–Ge phase diagram, we propose a method to mitigate this issue. By introducing Ge-rich conditions during the temperature-increase step between the formation of the Ge core and the Si shell, we have successfully eliminated Au nanoparticles on Ge surfaces, and thus fabricated Ge/Si-NWs without Si nanowires.

    DOI: 10.7567/APEX.9.055504

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  • Single-electron-spin-resonance in an isotopically-enriched Si/SiGe quantum dot

    Yoneda J., Takeda K., Otsuka T., Nakajima T., Delbecq M. R., Allison G., Honda T., Kodera T., Oda S., Hoshi Y., Usami N., Itoh K. M., Tarucha S.

    Meeting Abstracts of the Physical Society of Japan   71   1160 - 1160   2016

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    DOI: 10.11316/jpsgaiyo.71.2.0_1160

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  • AC Stark effect of a driven spin qubit in a magnetic field gradient

    Takeda K., Kamioka J., Yoneda J., Otsuka T., Delbecq M. R., Allison G., Nakajima T., Kodera T., Oda S., Tarucha S.

    Meeting Abstracts of the Physical Society of Japan   71   1161 - 1161   2016

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    DOI: 10.11316/jpsgaiyo.71.2.0_1161

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  • Measurement of charge states in Si/SiGe multiple quantum dots

    Otsuka Tomohiro, Takeda Kenta, Yoneda Jun, Honda Takumu, Delbecq Matthieu R., Allison Giles, Marx Marian, Nakajima Takashi, Kodera Tetsuo, Oda Shunri, Hoshi Yusuke, Usami Noritaka, Itoh Kohei M., Tarucha Seigo

    Meeting Abstracts of the Physical Society of Japan   71   1159 - 1159   2016

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  • Improvement of fluorescence intensity of nitrogen vacancy centers in self-formed diamond microstructures

    S. Furuyama, K.Tahara, T. Iwasaki, M.Shimizu, J.Yaita, M.Kondo, T. Kodera, M.Hatano

    Appl. Phys. Lett   ( No. 107 )   2015.10

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    DOI: 10.1063/1.4933103

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  • Formation of three-dimensionally integrated nanocrystalline silicon particles by dip-coating method

    Shotaro Yamazaki, Yoshifumi Nakamine, Ran Zheng, Masahiro Kouge, Tetsuya Ishikawa, Koichi Usami, Tetsuo Kodera, Yukio Kawano, Shunri Oda

    Japanese Journal of Applied Physics   Vol. 54 ( 10 )   105001 - 105001   2015.9

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    Printable technologies using silicon nanoink, in which nanocrystalline silicon (nc-Si) quantum dots are dispersed in solvents, are promising for novel electron and photonic device applications. The dip-coating method is applied for the first time to fabricate three-dimensionally integrated structures of nc-Si quantum dots with a uniform size of 10 nm prepared by the very high frequency plasma decomposition of silane gas. We have clarified the major problem of the dip-coating method, which is the formation of stripe structures. To circumvent this problem, we have proposed two methods: coating onto line-and-space-patterned substrates and utilization of electrophoresis force. We have successfully demonstrated the control of the position and number of layers of nc-Si by using a line-and-space-patterned substrate, however, with a limited shape. We have clarified the conditions of the formation of stripe-free regions by varying applied voltage and nc-Si concentration in the electrophoresis method.

    DOI: 10.7567/JJAP.54.105001

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  • Quantum dots in single electron transistors with ultrathin silicon-on-insulator structures

    S. Ihara, A. Andreev, D. A. Williams, T. Kodera, S. Oda

    Applied Physics Letters   Vol. 107   2015.7

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    DOI: 10.1063/1.4926335

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  • Ge/Si core/shell nanowires with controlled low temperature grown Si shell thickness Reviewed

    Tomohiro Noguchi, Kodai Morita, Marolop Simanullang, Zhengyu Xu, Tetsuo Kodera, Yukio Kawano, Shunri Oda

    Phys. Status Solidi A   Vol. 212 ( 7 )   1578 - 1581   2015.6

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    DOI: 10.1002/pssa.201532340

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  • 電気計測(静特性)のコツ

    小寺哲夫

    応用物理   2015.4

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  • Back-action-induced excitation of electrons in a silicon quantum dot with a single-electron transistor charge sensor Reviewed

    Kosuke Horibe, Tetsuo Kodera, Shunri Oda

    Applied Physics Letters   Vol. 106 ( No. 5 )   2015.2

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    DOI: 10.1063/1.4907894

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  • Lithographically-defined few-electron silicon quantum dots based on a silicon-on-insulator substrate Reviewed

    K. Horibe, T. Kodera, S. Oda

    Applied Physics Letters   Vol. 106 ( No. 8 )   2015.2

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    DOI: 10.1063/1.4913321

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  • Analysis of effect of gate oxidation at SiC MOS interface on threshold-voltage shift using deep-level transient spectroscopy Reviewed

    J. Hasegawa, M. Furuhashi, S. Nakata, T. Iwasaki, T. Kodera, T. Nishimura, M. Hatano, M Noguchi

    Jpn. J. Appl. Phys.   Vol. 54 ( 4S )   04DP05   2015.1

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    In this study, we investigate the influence of wet oxidation after nitridation of a gate oxide on the interface states in SiC metal–oxide–semiconductor field-effect transistors (MOSFETs). We used deep-level transient spectroscopy (DLTS) to clarify the mechanism behind the positive shift in the threshold voltage after wet oxidation without any significant decrease in the mobility. We applied DLTS using a small pulse to obtain the depth profile of the states. We found that the density of deep-level states near the interface on the SiC side increased after wet oxidation at 600 and 800 °C, whereas the density of shallow states did not increase. This result indicates that the increase in the deep-level states is related to the threshold-voltage shift, and there is no degradation in the mobility.

    DOI: 10.7567/jjap.54.04dp05

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  • 16aAE-5 Fast and addressable single-spin operation in a Si double quantum dot

    Takeda K., Kamioka J., Obata T., Otsuka T., Nakajima T., M. R. Delbecq, Amaha S., Yoneda J., G. Alison, Noiri A., Sugawara R., Kodera T., Oda S., Tarucha S.

    Meeting Abstracts of the Physical Society of Japan   70   1006 - 1006   2015

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    DOI: 10.11316/jpsgaiyo.70.2.0_1006

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  • 16aAE-4 Fabrication and characterization of gate-defined Si MOS quantum dot devices

    Yoneda J., Honda T., Takeda K., Marx M., Otsuka T., Nakajima T., Delbecq M., Amaha S., Kodera T., Oda S., Tarucha S., Tarucha S.

    Meeting Abstracts of the Physical Society of Japan   70   1005 - 1005   2015

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    DOI: 10.11316/jpsgaiyo.70.2.0_1005

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  • Coupled Si quantum dots for spin-based qubits

    T. Kodera, S. Oda

    2015

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  • 23pBK-11 Measurement of spin-valley states in a Si double quantum dot using electron spin resonance

    Takeda K., Kamioka J., Obata T., Otsuka T., Nakajima T., Delbecq M. R., Amaha S., Yoneda J., Noiri A., Sugawara R., Kodera T., Oda S., Tarucha S.

    Meeting Abstracts of the Physical Society of Japan   70   1378 - 1378   2015

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    DOI: 10.11316/jpsgaiyo.70.1.0_1378

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  • Fabrication of a highly controllable Si-MOS quantum dot device Reviewed

    Takumu Honda, Jun Yoneda, Kenta Takeda, Tetsuo Kodera, Seigo Tarucha, Shunri Oda

    2015 SILICON NANOELECTRONICS WORKSHOP (SNW)   2015

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  • スピン量子情報デバイスに向けたシリコン量子構造とダイヤモンドへの期待

    小寺哲夫, 波多野睦子

    2015

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  • Fabrication and characterization of p-channel Si double quantum dots Reviewed

    Ko Yamada, Tetsuo Kodera, Tomohiro Kambara, Shunri Oda

    Applied Physics Letters   Vol. 105 ( No. 11 )   2014.9

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    DOI: 10.1063/1.4896142

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  • Surface passivation of germanium nanowires using Al2O3 and HfO2 deposited via atomic layer deposition (ALD) technique Reviewed

    Marolop Simanullang, Koichi Usami, Tomohiro Noguchi, Akhmadi Surawijaya, Tetsuo Kodera, Yukio Kawano, Shunri Oda

    Japanese Journal of Applied Physics   Vol. 53 ( 6 )   2014.5

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    DOI: 10.7567/JJAP.53.06JG04

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  • Surface passivation of germanium nanowires using Al

    Simanullang Marolop, Usami Koichi, Noguchi Tomohiro, Surawijaya Akhmadi, Kodera Tetsuo, Kawano Yukio, Oda Shunri

    Jpn. J. Appl. Phys.   53 ( 6 )   06JG04   2014.5

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    DOI: 10.7567/JJAP.53.06JG04

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  • Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts

    J. Kamioka, T. Kodera, K. Takeda, T. Obata, S. Tarucha, S. Oda

    Journal of Applied Physics   Vol. 115 ( 20 )   2014.5

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    DOI: 10.1063/1.4878979

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  • GHz photon-activated hopping between localized states in a silicon quantum dot

    T. Ferrus, A. Rossi, A. Andreev, T. Kodera, T. Kambara, W. Lin, S. Oda, D. A. Williams

    New Journal of Physics   Vol. 16   2014.1

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  • Effect of gate oxide process at SiC-MOS interface on threshold voltage shift analyzed by DLTS

    J. Hasegawa, M. Noguchi, M. Furuhashi, S. Nakata, T. Iwasaki, T. Kodera, T. Nishimura, M. Hatano

    Extended Abstracts of the 2014 International Conference on Solid State Devices and Materials   2014

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    DOI: 10.7567/ssdm.2014.ps-14-13l

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  • Microscopic study of germanium nanowires grown via gold-catalyzed chemical vapor deposition below the eutectic temperature Reviewed

    Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Yukio Kawano, Shunri Oda

    Journal of Crystal Growth   Vol. 384   77 - 81   2013.12

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    DOI: 10.1016/j.jcrysgro.2013.09.009

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  • Optimization and Tunnel Junction Parameters Extraction of Electro-statically Defined Silicon Double Quantum Dots Structure Reviewed

    M. A. Sulthoni, T. Kodera, Y. Kawano, S. Oda

    Japanese Journal of Applied Physics   Vol. 52 ( 8 )   2013.7

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    DOI: 10.7567/JJAP.52.081301

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  • Characterization and suppression of low-frequency noise in Si/SiGe quantum point contacts and quantum dots

    K. Takeda, T. Obata, Y. Fukuoka, W. M. Akhtar, J. Kamioka, T. Kodera, S. Oda, S. Tarucha

    Appl. Phys. Lett   Vol. 102 ( 12 )   2013.3

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    DOI: 10.1063/1.4799287

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  • Channel Length Scaling and Surface Nitridation of Silicon Nanocrystals for High Performance Electron Devices Reviewed

    SHUNRI ODA, Jannatul Susoma, Yoshifumi Nakamine, Tetsuo Kodera

    Japanese Journal of Applied Physics   Vol. 52 ( 4 )   2013.3

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    DOI: 10.7567/JJAP.52.04CH08

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  • Dual Function of Single Electron Transistor Coupled with Double Quantum Dot: Gating and Charge Sensing Reviewed

    Tomohiro Kambara, Tetsuo Kodera, Yasuhiko Arakawa, Shunri Oda

    Jpn. J. Appl. Phys   Vol. 52 ( 4 )   2013.2

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    DOI: 10.7567/JJAP.52.04CJ01

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  • Photoluminescence of Nanocrystalline Silicon Quantum Dots with Various Sizes and Various Phosphorus Doping Concentrations prepared by Very High Frequency Plasma

    K. Someno, K. Usami, T. Kodera, Y. Kawano, M. Hatano, S. Oda

    Jpn. J. Appl. Phys   Vol. 51   2012.10

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  • Magnetic field dependence of Pauli spin blockade: A window into the sources of spin relaxation in silicon quantum dots

    G. Yamahata, T. Kodera, H. O. H. Churchill, K. Uchida, C. M. Marcus, S. Oda

    Physical Review B   Vol. 86   2012.9

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  • ユニバーサル曲線を超えるMOSFET移動度の観測とその物理的起源の解明

    大橋 輝之, 高橋 綱己, 小寺 哲夫, 小田 俊理, 内田 建

    応用物理学会学術講演会講演予稿集   2012.2   2812 - 2812   2012.8

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    DOI: 10.11470/jsapmeeting.2012.2.0_2812

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  • Key capacitive parameters for designing single-electron transistor charge sensors

    K. Horibe, T. Kodera, T. Kambara, K. Uchida, S. Oda

    J. Appl. Phys   Vol. 111   2012.5

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  • Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots

    T. Ferrus, A. Rossi, W. Lin, D. A. Williams, T. Kodera, S. Oda

    AIP Advances 2   Vol. 2   2012.4

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  • A Multi-Purpose Electrostatically Defined Silicon Quantum Dot Structure Reviewed

    Muhammad Amin Sulthoni, Tetsuo Kodera, Yukio Kawano, Shunri Oda

    Japanese Journal of Applied Physics   Vol. 51 ( 2 )   2012.2

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    DOI: 10.1143/JJAP.51.02BJ10

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  • Fabrication and characterization of Si/SiGe quantum dots with capping gate

    Tetsuo Kodera, Yuji Fukuoka, Kenta Takeda, Toshiaki Obata, Katsuharu Yoshida, Kentaro Sawano, Ken Uchida, Yasuhiro Shiraki, Seigo Tarucha, Shunri Oda

    2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012   2012

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    DOI: 10.1109/SNW.2012.6243291

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  • Low-temperature growth of Ge nanowires by vapor-liquid-solid chemical vapor deposition

    Marolop Simanullang, Ayse Seyhan, Koichi Usami, Tetsuo Kodera, Yukio Kawano, Shunri Oda

    ECS Transactions   Vol. 45 ( No. (3) )   2012

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  • Removal of Surface Oxide Layer from Silicon Nanocrystals by Hydrogen Fluoride Vapor Etching

    Y. Nakamine, T. Kodera, K. Uchida, S. Oda

    Japanese Journal of Applied Physics   Vol. 50 ( No. 115002 )   2011.11

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  • Growth of narrow and straight germanium nanowires by vapour-liquid-solid chemical-vapour-deposition

    Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda

    Japanese Journal of Applied Physics   Vol. 50 ( 10 )   105002 - 105002-6   2011.10

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    This paper describes the growth of germanium nanowires (Ge NWs) via vapor--liquid--solid (VLS) mechanism by the low-pressure chemical vapor deposition (CVD) technique. A systematic study of the growth conditions of the Ge NWs has been conducted by varying the size of the Au nanoparticles and the substrate temperature. The tapering of the nanowires has been minimised when the growth temperature is lowered from 300 to 280 °C which also contributes to the decrease in the diameter of the Ge NWs. The growth temperature of 280 °C yields Ge NWs with diameters of less than 5 nm, offering an opportunity for the fabrication of high-performance germanium nanowire field-effect transistors.

    DOI: 10.1143/JJAP.50.105002

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  • Germanium nanowires with 3-nm-diameter prepared by low temperature vapour-liquid-solid chemical vapour deposition

    Marolop Simanullang, Koichi Usami, Tetsuo Kodera, Ken Uchida, Shunri Oda

    Journal of Nanoscience and Nanotechnology   Vol. 11   2011.9

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  • 低温・強磁場環境を利用した極薄膜SOI中の変形ポテンシャルの評価

    大橋 輝之, 高橋 綱己, 小寺 哲夫, 小田 俊理, 内田 建

    応用物理学会学術講演会講演予稿集   2011.2   2259 - 2259   2011.8

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    DOI: 10.11470/jsapmeeting.2011.2.0_2259

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  • Numerical simulation study of electrostatically defined silicon double quantum dot device

    M. A. Sulthoni, T. Kodera, K. Uchida, S. Oda

    J. Appl. Phys.   Vol. 110   2011.8

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  • Study on Device Parameters of Carbon Nanotube Field Electron Transistors to Realize Steep Subthreshold Slope of Less than 60 mV/Decade

    Algul Berrin Pinar, Kodera Tetsuo, Oda Shunri, Uchida Ken

    Jpn J Appl Phys   50 ( 4 )   04DN01 - 04DN01-4   2011.4

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    The gate-induced band-to-band tunneling in carbon nanotube field effect transistors (CNFETs) is studied by solving the Poissson and carrier transport equations self-consistently. The transmission coefficient through the bandgap has been calculated using the Wentzel--Kramers--Brillouin (WKB) approximation. The device parameters of CNFETs with uniformly doped source/drain (S/D) regions have been investigated to find the parameter window to observe subthreshold slope (SS) of less than 60 mV/dec. It is demonstrated that the band-to-band tunneling (BTBT) current can be significantly enhanced by reducing the thickness of inter-layer oxide ($t_{\text{int } }$) between the substrate and carbon nanotube (CNT). With a thin $t_{\text{int } }$ of 10 nm (SiO2) and optimized S/D doping concentrations, a steep SS of less than 60 mV/dec can be achieved.

    DOI: 10.1143/JJAP.50.04DN01

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  • Simulation study of charge modulation in coupled quantum dots in silicon

    Tomohiro Kambara, Tetsuo Kodera, Tsunaki Takahashi, Gento Yamahata, Ken Uchida, Shunri Oda

    Japanese Journal of Applied Physics   Vol. 50 ( 4 )   2011.4

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    DOI: 10.1143/JJAP.50.04DJ05

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  • Detection of variable tunneling rates in silicon quantum dots

    A. Rossi, T. Ferrus, W. Lin, T. Kodera, D. A. Williams, S. Oda

    Appl. Phys. Lett.   Vol. 98   2011.4

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  • 高不純物濃度のETSOI(Extremely-Thin SOI)拡散層における移動度とSOI膜厚および不純物濃度の関係

    角谷 直哉, 高橋 綱己, 大橋 輝之, 小寺 哲夫, 小田 俊理, 内田 建

    応用物理学会学術講演会講演予稿集   2011.1   3121 - 3121   2011.3

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    DOI: 10.11470/jsapmeeting.2011.1.0_3121

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  • Size Reduction and Phosphorus Doping of Silicon Nanocrystals Prepared by a Very High Frequency Plasma Deposition System

    Y. Nakamine, N. Inaba, T. Kodera, K. Uchida, R. N. Pereira, A. R. Stegner, M. S. Brandt, M. Stutzmann, S. Oda

    Japanese Journal of Applied Physics   Vol. 50 ( 2 )   25002 - 025002-5   2011.2

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    In this paper, we describe the size reduction and phosphorus doping of silicon nanocrystals (SiNCs) fabricated using a very high frequency (VHF) plasma deposition system. The size reduction of SiNCs is achieved by changing the VHF plasma power. The size of SiNCs changes from 10 to 5 nm. We discuss the relationship between VHF plasma power and the size of SiNCs in terms of radicals in the VHF plasma, such as SiH3, SiH2, SiH, and H. On the other hand, we have fabricated phosphorus-doped SiNCs by adding PH3 gas diluted with Ar gas. To confirm where phosphorus atoms are located, electrically detected magnetic resonance (EDMR) measurements are conducted. We have observed a hyperfine interaction between unpaired electrons and phosphorus atoms and enhanced hyperfine splitting owing to a quantum size effect. As a result, we can conclude that phosphorus atoms exist at substitutional sites of SiNCs and they act as donors.

    DOI: 10.1143/JJAP.50.025002

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  • Experimental study on subband structures and hole transport in (110) Si p-type metal-oxide-semiconductor field-effect transistors under high magnetic field

    T. Takahashi, T. Kodera, S. Oda, K. Uchida

    Journal of Applied Physics   Vol. 109 ( 3 )   2011.2

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    DOI: 10.1063/1.3543990

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  • Enhancement of Rashba coupling in vertical In0.05Ga0.95As/GaAs quantum dots

    S. M. Huang, A. O. Badrutdinov, L. Serra, T. Kodera, T. Nakaoka, N. Kumagai, Y. Arakawa, D. A. Tayurskii, K. Kono, K. Ono

    Phys. Rev. B   Vol. 84 ( No. 085325 )   2011

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  • トップゲートとサイドゲートによるシリコン結合量子ドットの静電結合制御

    小寺哲夫, 小田俊理

    2011

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  • Pauli Spin Blockade and Influence of Hyperfine Interaction in Vertical Quantum Dot Molecule with Six-electrons Reviewed

    Shinichi Amaha, Tetsuo Kodera, Tsuyoshi Hatano, Keiji Ono, Yasuhiro Tokura, Seigo Tarucha, James A. Gupta, David Guy Austing

    J. Phys. Soc. Jpn.   Vol. 80 ( 2 )   23701 - 023701-4   2011

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    DOI: 10.1143/JPSJ.80.023701

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  • Realization of Lithographically-Defined Silicon Quantum Dots without Unintentional Localized Potentials Reviewed

    Tetsuo Kodera, Gento Yamahata, Tomohiro Kambara, Kousuke Horibe, Thierry Ferrus, David A. Williams, Yasuhiko Arakawa, SHUNRI ODA

    AIP Conference Proceedings   Vol. 1399   2011

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    DOI: 10.1063/1.3666388

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  • Anomalous Electron Mobility in Extremely-Thin SOI (ETSOI) Diffusion Layers with SOI Thickness of Less Than 10 nm and High Doping Concentration of Greater Than 1x10(18)cm(-3)

    Naotoshi Kadotani, Tsunaki Takahashi, Kunro Chen, Tetsuo Kodera, Shunri Oda, Ken Uchida

    2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST   2010

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  • Spin-related tunneling in lithographically-defined silicon quantum dots Reviewed

    T. Kodera, G. Yamahata, T. Kambara, K. Horibe, K. Uchida, C. M. Marcus, S. Oda

    2010 Silicon Nanoelectronics Workshop, SNW 2010   2010

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    DOI: 10.1109/SNW.2010.5562576

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  • Two-photon control of biexcitonic population in telecommunication-band quantum dot

    Toshiyuki Miyazawa, Tetsuo Kodera, Toshihiro Nakaoka, Katsuyuki Watanabe, Naoto Kumagai, Naoki Yokoyama, Yasuhiko Arakawa

    Appl. Phys.   Vol. Express 3 ( 6 )   64401 - 064401-3   2010

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    Rabi oscillations of telecommunication-band excitons and biexcitons have successfully been observed by the photocurrent spectroscopy in a single InAs/GaAs quantum dot. We show the excitonic Rabi oscillations up to the rotation angle of 8$\pi$ as well as the biexciton Rabi oscillation up to 2$\pi$. The decoherence time of both the telecommunication-band exciton and biexciton is much longer than the excitaion pulse-duration of 40 ps. The results demonstrate that the telecommunication-band exciton and biexciton system is promising for exciton-based-quantum information devices compatible with optical fiber networks.

    DOI: 10.1143/APEX.3.064401

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  • Acoustic phonon effects on telecommunication-band exciton Rabi oscillation

    Toshiyuki Miyazawa, Toshihiro Nakaoka, Tetsuo Kodera, Hiroyuki Takagi, Naoto Kumagai, Katsuyuki Watanabe, Yasuhiko Arakawa

    Physica Status Solidi   Vol. (c) 7, 10   2010

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  • Direct Observation of Subband Structures in (110) pMOSFETs under High Magnetic Field

    TAKAHASHI Tsunaki, YAMAHATA Gento, OGI Jun, KODERA Tetsuo, ODA Shunri, UCHIDA Ken

    IEICE technical report   109 ( No. 118 )   5 - 8   2010

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    The bandstructures and carrier transport in (110) pFETs are thoroughly studied over a wide temperature range under high magnetic fields. In (110) pFETs, the degenerate hole bands in bulk Si are separated into the higher energy band and the lower energy band. The energy difference between these bands is experimentally evaluated. The effective masses of each band are directly obtained from the Shubnikov-de Haas (SdH) oscillation analysis. It is demonstrated that mobility in the higher energy band is worse than that in the lower energy band, resulting in sharp mobility drop at higher surface carrier concentrations (N_s) and a clear hump in I_d-V_g characteristics at low temperatures.

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  • Fabrication and characterization of a vertical pillar structure including a self-assembled quantum dot and a quantum well Reviewed

    Tetsuo Kodera, Keiji Ono, Naoto Kumagai, Toshihiro Nakaoka, Seigo Tarucha, Yasuhiko Arakawa

    Physica   Vol. E42 ( 10 )   2592 - 2594   2010

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    DOI: 10.1016/j.physe.2010.03.034

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  • Direct Observation of Subband Structures in (110) pMOSFETs under High Magnetic Field: Impact of Energy Split between Bands and Effective Masses on Hole Mobility

    Tsunaki Takahashi, Gento Yamahata, Jun Ogi, Tetsuo Kodera, Shunri Oda, Ken Uchida

    2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING   444 - +   2009

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  • Phonon induced coherence in multi-level quantum dot system Reviewed

    Y. Tokura, T. Kubo, S. Amaha, T. Kodera, S. Tarucha

    Physica   Vol. E 40   1690   2008

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    DOI: 10.1016/j.physe.2007.10.029

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  • Two level mixing effects probed by resonant tunneling through vertically coupled quatnum dots

    S. Amaha, C. Payette, J. A. Gupta, T. Hatano, K. Ono, T. Kodera, Y. Tokura, S. Tarucha, D. G. Austing

    Phys. Stat. Sol. C   Vol. 5   2008

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  • Dynamics of excitons in an InAs quantum dot at a telecom-band

    A. Suzuki, T. Kodera, T. Miyazawa, H. Takagi, N. Kumagai, K. Watanabe, T. Nakaoka, Y. Arakawa

    2008 Int. Nano-Optoelectronics Workshop, iNOW 2008 in Cooperation With Int. Global-COE Summer School (Photonics Integration-Core Electronics: PICE) and 31st Int. Symposium on Optical Communications   231 - 232   2008

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    DOI: 10.1109/INOW.2008.4634522

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MISC

  • SAW Generation with Suppression of Electromagnetic Waves by Differential Excitation of IDT

    太田俊輔, 太田俊輔, 岡崎雄馬, 中村秀司, 大江武彦, SELLIER Hermann, BAEUERLE Christopher, 金子晋久, 小寺哲夫, 高田真太郎, 高田真太郎

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   71st   2024

  • Design and evaluation of single-stage matching circuits suitable for RF reflectometry of a physically defined quantum dot

    松田凌, 神岡純, 溝口来成, 米田淳, 小寺哲夫

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   70th   2023

  • Quantum Non-demolition Readout of a Silicon Spin Qubit

    米田淳, 武田健太, 野入亮人, 中島峻, LI Sen, 神岡純, 小寺哲夫, 樽茶清悟

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   70th   2023

  • Auto-tuning of a quantum dot with model-based reinforcement learning

    近藤知宏, 溝口来成, 米田淳, 小寺哲夫

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   70th   2023

  • Electron Transport Control by Single-Electron Pump for Silicon Quantum Computers

    宇津木健, 李憲之, 土屋龍太, 峰利之, 新海剛, 柳至, 菅野雄介, 関口知紀, 秋山悟, 和智勇介, 乗松崇泰, 溝口来成, 米田淳, 小寺哲夫, 斎藤慎一, 久本大, 水野弘之

    日本物理学会講演概要集(CD-ROM)   78 ( 1 )   2023

  • Characterization of Detuning Noise in a Si Quantum Dot

    中越一真, 荒川雄登, 松岡竜太郎, 土屋龍太, 峰利之, 久本大, 水野弘之, 溝口来成, 米田淳, 小寺哲夫

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   70th   2023

  • Measurement of quantum dots via a silicon interposer toward spin qubits integration

    二谷時緒, 溝口来成, 田口美里, 三木拓司, 永田真, 米田淳, 小寺哲夫

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   84th   2023

  • Bayesian estimation approach for error rate characterization of single electron transport

    坂本剛, 高橋一斗, 近藤知宏, 溝口来成, 小寺哲夫, 米田淳

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   84th   2023

  • Characterization of Charge Noise in an nMOS Si Quantum Dot using RF Reflectometry

    荒川雄登, 中越一真, 松岡竜太郎, 土屋龍太, 峰利之, 久本大, 水野弘之, 溝口来成, 米田淳, 小寺哲夫

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   70th   2023

  • Magnetospectroscopy of electron spins in a multi-electron silicon quantum dot

    溝口来成, 坂本剛, 近藤知宏, 松岡竜太郎, 土屋龍太, 峰利之, 久本大, 水野弘之, 米田淳, 小寺哲夫

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   70th   2023

  • Contact Pad Designs of Semiconductor Qubit Devices for Reducing On-chip Microwave Crosstalk

    泊開人, 泊開人, 米田淳, 小寺哲夫

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   83rd   2022

  • Evaluating Charge Noise Spectrum of pMOS Si Quantum Dots

    中越一真, 高橋洋貴, 溝口来成, 米田淳, 小寺哲夫

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   69th   2022

  • Time control operation of a silicon hole spin in physically defined quantum dots at elevated temperatures

    吉川拓弥, 鈴木優作, IBAD Sayyid Irsyadul, 西山伸平, 西山伸平, 加藤公彦, LIU Yongxun, 村上重則, 森貴洋, 溝口来成, 米田淳, 小寺哲夫

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   83rd   2022

  • S-parameter measurement of a quantum dot and matching circuit design for improvement of RF reflectometry

    松田凌, 神岡純, 溝口来成, 米田淳, 小寺哲夫

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   83rd   2022

  • Evaluating the Temperature Dependence of Charge Noise in a pMOS Si Quantum Dot

    中越一真, 土屋龍太, 峰利之, 久元大, 水野弘之, 溝口来成, 米田淳, 小寺哲夫

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   83rd   2022

  • Cryogenic active inductors toward dense spin qubit readout circuits

    二谷時緒, 溝口来成, 神岡純, 米田淳, 小寺哲夫

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   83rd   2022

  • Quantum Current Source Realized by Surface Acoustic Wave Pulses

    太田俊輔, 太田俊輔, WANG Junliang, EDLBAUER Hermann, JADOT Baptiste, MORTEMOUSQUE Pierre-Andre, MORTEMOUSQUE Pierre-Andre, AYMERIC Richard, 岡崎雄馬, 中村秀司, LUDWIG Arne, WIECK Andreas D., URDAMPILLETA Matias, MEUNIER Tristan, 小寺哲夫, 金子晋久, BAEUERLE Christopher, 高田真太郎

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   83rd   2022

  • Single Electron Transport with Single Minimum Surface Acoustic Wave

    太田俊輔, 太田俊輔, WANG Junliang, EDLBAUER Hermann, JADOT Baptiste, MORTEMOUSQUE Pierre-Andre, MORTEMOUSQUE Pierre-Andre, RICHARD Aymeric, 岡崎雄馬, 中村秀司, LUDWIG Arne, WIECK Andreas D., URDAMPILLETA Matias, MEUNIER Tristan, 小寺哲夫, 金子晋久, 高田真太郎, BAEUERLE Christopher

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   69th   2022

  • Characterization of sensitivity of a p-channel physically-defined silicon quantum-dot RF charge sensor

    溝口来成, 西山伸平, 西山伸平, 加藤公彦, LIU Yongxun, 村上重則, 森貴洋, 米田淳, 小寺哲夫

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   82nd   2021

  • Hole spin resonance in a physically defined p-type silicon double quantum dot

    田所雅大, 鈴木優作, 西山伸平, 西山伸平, 加藤公彦, LIU Yongxun, 村上重則, 森貴洋, 溝口来成, 米田淳, 小寺哲夫

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   68th   2021

  • Magnetic field dependence of hole spin resonance in a physically defined silicon quantum dot

    鈴木優作, 田所雅大, IBAD Sayyid Irsyadul, 西山伸平, 西山伸平, 加藤公彦, LIU Yongxun, 村上重則, 森貴洋, 溝口来成, 米田淳, 小寺哲夫

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   82nd   2021

  • Generation of delta-pulse surface acoustic waves using chirp IDT

    太田俊輔, 太田俊輔, WANG Junliang, 高田真太郎, 中村秀司, 岡崎雄馬, BAEUERLE Christopher, 金子晋久, 小寺哲夫

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   68th   2021

  • Selective confinement of single flying electrons to surface acoustic waves

    太田俊輔, 太田俊輔, EDLBAUER Hermann, WANG Junliang, 高田真太郎, 中村秀司, 岡崎雄馬, BAEUERLE Christopher, 金子晋久, 小寺哲夫

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   82nd   2021

  • Fast charge sensing in accumulation mode silicon quantum dots with radio-frequency reflectometry

    野入亮人, 武田健太, 米田淳, 中島峻, 小寺哲夫, 樽茶清悟

    日本物理学会講演概要集(CD-ROM)   75 ( 1 )   2020

  • Quantum non-demolition readout of an electron spin in a silicon quantum dot

    米田淳, 米田淳, 武田健太, 野入亮人, 中島峻, LI Sen, 神岡純, 小寺哲夫, 樽茶清悟

    日本物理学会講演概要集(CD-ROM)   75 ( 2 )   2020

  • Evaluation of the Split-52 IDT for realizing high precision quantum current source using surface acoustic waves

    太田俊輔, 太田俊輔, 高田真太郎, 中村秀司, 岡崎雄馬, 金子晋久, 小寺哲夫

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   67th   2020

  • シリコン2重量子ドットにおける位相雑音の交差相関

    米田淳, 武田健太, 野入亮人, 中島峻, LI Sen, 小寺哲夫, 樽茶清悟

    日本物理学会講演概要集(CD-ROM)   74 ( 1 )   2019

  • シリコン量子ドットにおける2スピン同時検出

    米田淳, 武田健太, 野入亮人, 中島峻, 大塚朋廣, LI Sen, 小寺哲夫, 樽茶清悟

    日本物理学会講演概要集(CD-ROM)   73 ( 1 )   2018

  • 同位体制御Si/SiGe電子スピン量子ビットの高速量子操作忠実度

    米田淳, 武田健太, 大塚朋廣, 中島峻, DELBECQ Matthieu R., ALLISON Giles, 本田拓夢, 小寺哲夫, 小田俊理, 星裕介, 宇佐美徳隆, 伊藤公平, 樽茶清悟

    日本物理学会講演概要集(CD-ROM)   72 ( 1 )   2017

  • 同位体制御Si/SiGe単一電子スピンの1/f電荷揺らぎによる位相雑音

    米田淳, 武田健太, 大塚朋廣, 中島峻, DELBECQ Matthieu R., ALLISON Giles, 本田拓夢, 小寺哲夫, 小田俊理, 星裕介, 宇佐美徳隆, 伊藤公平, 樽茶清悟

    日本物理学会講演概要集(CD-ROM)   72 ( 2 )   2017

  • 多層Alゲート構造を用いたSi-MOS量子ドットデバイス作製プロセスの検討

    本田拓夢, 米田淳, 武田健太, 川那子高暢, 小寺哲夫, 小寺哲夫, 樽茶清悟, 樽茶清悟, 樽茶清悟, 小田俊理

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   63rd   2016

  • ゲート制御性を向上したSi-MOS量子ドットデバイスの作製と評価

    本田拓夢, 小寺哲夫, 小寺哲夫, 米田淳, 武田健太, 樽茶清悟, 樽茶清悟, 樽茶清悟, 小田俊理

    応用物理学会春季学術講演会講演予稿集(CD-ROM)   62nd   2015

  • Si-MOS構造を有する多重量子ドットデバイスの特性評価

    本田拓夢, 米田淳, 武田健太, 小寺哲夫, 小寺哲夫, 樽茶清悟, 樽茶清悟, 樽茶清悟, 小田俊理

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   76th   2015

  • 8pAV-5 Electrically driven single-electron spin resonance in a Si/SiGe double quantum dot with a micromagnet

    Takeda K., Kamioka J., Obata T., Otsuka T., Nakajima T., Delbecq M., Amaha S., Yoneda J., Noiri A., Sugawara R., Kodera T., Oda S., Tarucha S.

    Meeting abstracts of the Physical Society of Japan   69 ( 2 )   478 - 478   2014.8

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  • アンドープ基板を用いたSi/SiGe量子ドットデバイスのノイズ評価

    本田拓夢, 武田健太, 神岡純, 米田淳, MARIAN Marx, 小寺哲夫, 小寺哲夫, 樽茶清悟, 樽茶清悟, 樽茶清悟, 小田俊理

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   75th   2014

  • シリコンナノ結晶とP3HTの複合体における光伝導特性評価

    舩木健伍, 近藤信啓, 宇佐美浩一, 小寺哲夫, 河野行雄, 野崎智洋, 小田俊理

    応用物理学会秋季学術講演会講演予稿集(CD-ROM)   74th   ROMBUNNO.18P-C11-4   2013.8

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    J-GLOBAL

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  • Development of double quantum dots on isotopically controlled Si/SiGe

    Obata T., Takeda K., Kierig J., Wild A., Sailer J., Kamioke J., Kodera T., Akhtar W.M, Oda S., Bougeard D., Abstreiter G., Tarucha S.

    Meeting abstracts of the Physical Society of Japan   68 ( 2 )   635 - 635   2013.8

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  • 29aXQ-2 Charge noise characterization in Si/SiGe quantum contacts with top gate

    Takeda K., Obata T., Fukuoka Y., Sailer Juergen, Wild Andreas, Kodera T., Oda S., Bougeard Dominique, Abstreiter Gerhard, Tarucha S.

    Meeting abstracts of the Physical Society of Japan   68 ( 1 )   783 - 783   2013.3

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  • 29aXQ-3 Development of Lateral quantum dots on non-doped Si/SiGe

    Obata T., Takeda K., Kamioka J., Kodera T., Akhtar W. M., Sawano K., Oda S., Shiraki Y., Tarucha Seigo

    Meeting abstracts of the Physical Society of Japan   68 ( 1 )   784 - 784   2013.3

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  • 24aBJ-9 Charge sensing using silicon quantum dots

    Kodera T., Horibe K., Lin W., Kambara T., Ferrus T., Rossi A., Uchida K., Williams D. A., Arakawa Y., Oda S.

    Meeting abstracts of the Physical Society of Japan   67 ( 1 )   719 - 719   2012.3

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  • 24aTR-2 High frequency response of Si/SiGe double quantum dot

    Takeda K., Obata T., Sailer Juergen, Yoshida K., Fukuoka Y., Kodera T., Oda S., Bougeard Dominique, Tarucha S.

    Meeting abstracts of the Physical Society of Japan   66 ( 2 )   704 - 704   2011.8

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  • 23pTM-12 Spin effects and magnetic field dependence in silicon quantum dots

    Kodera T., Horibe K., Kambara T., Yamahata G., Uchida K., Arakawa Y., Oda S.

    Meeting abstracts of the Physical Society of Japan   66 ( 2 )   698 - 698   2011.8

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  • 28aHD-1 Consideration about Schottky gate of Si/SiGe quantum dot

    Takeda K., Obata T., Fukuoka Y., Otsuka T., Kodera T., Yoshida K., Sawano K., Oda S., Shiraki Y., Tarucha S.

    Meeting abstracts of the Physical Society of Japan   66 ( 1 )   723 - 723   2011.3

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  • Anomalous Electron Mobility in Extremely-Thin SOI (ETSOI) Diffusion Layers with High Doping Concentration

    KADOTANI Naotoshi, TAKAHASHI Tsunaki, CHEN Kunro, KODERA Tetsuo, ODA Shunri, UCHIDA Ken

    IEICE technical report   110 ( 406 )   35 - 38   2011.1

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    This paper is the first to report carrier transport in heavily doped ETSOI diffusion layers. We found that electron mobility in heavily doped ETSOI diffusion layer is totally different from electron mobility in heavily doped bulk Si. In other words, electron mobility is enhanced in thinner ETSOI diffusion layers (T_<SOI>5nm), whereas electron mobility is degraded as dopant concentration increases when T_<SOI> is 2nm.

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  • 24aWQ-2 Lateral dot fabrication by using a MOS electric gate on SiGe hetero structure

    Meeting abstracts of the Physical Society of Japan   65 ( 2 )   645 - 645   2010.8

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  • 24aWQ-3 Fabrication and evaluation of Si/SiGe quantum dot with Pd schottky gate

    Takeda K., Obata T., Fukuoka Y., Otsuka A., Kodera T., Yoshida K., Sawano K., Oda S., Shiraki Y., Tarucha S.

    Meeting abstracts of the Physical Society of Japan   65 ( 2 )   645 - 645   2010.8

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  • Suspended Quantum Dot Fabrication on a Heavily Doped Silicon Nanowire by Suppressing Unintentional Quantum Dot Formation

    Jun Ogi, Mohammad Adel Ghiass, Tetsuo Kodera, Yoshishige Tsuchiya, Ken Uchida, Shunri Oda, Hiroshi Mizuta

    JAPANESE JOURNAL OF APPLIED PHYSICS   49 ( 4 )   in press   2010

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  • Experimental Observation of Enhanced Electron–Phonon Interaction in Suspended Si Double Quantum Dots

    Jun Ogi, Thierry Ferrus, Tetsuo Kodera, Yoshishige Tsuchiya, Ken Uchida, David A. Williams, Shunri Oda, Hiroshi Mizuta

    Japanese Journal of Applied Physics   Vol. 49 ( 4 )   in press   2010

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  • Suspended Quantum Dot Fabrication on a Heavily Doped Silicon Nanowire by Suppressing Unintentional Quantum Dot Formation

    Jun Ogi, Mohammad Adel Ghiass, Tetsuo Kodera, Yoshishige Tsuchiya, Ken Uchida, Shunri Oda, Hiroshi Mizuta

    Japanese Journal of Applied Physics   Vol. 49 ( 4 )   in press   2010

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  • Pr系酸化膜を用いたヘテロ積層構造トンネル膜の電気特性シミュレーションと作製及び評価

    小林大助, 小林大助, 栗原智之, 栗原智之, 小寺哲夫, 内田建, 野平博司, 小田俊理, 小田俊理

    応用物理学会学術講演会講演予稿集(CD-ROM)   71st   2010

  • Experimental Observation of Enhanced Electron–Phonon Interaction in Suspended Si Double Quantum Dots

    Jun Ogi, Thierry Ferrus, Tetsuo Kodera, Yoshishige Tsuchiya, Ken Uchida, David A. Williams, Shunri Oda, Hiroshi Mizuta

    Japanese Journal of Applied Physics   Vol. 49 ( 4 )   in press   2010

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  • Control of Inter-dot Electrostatic Coupling by a Side Gate in Silicon Double Quantum Dot Operating at 4.5 K

    G. Yamahata, T. Kodera, H. Mizuta, K. Uchida, S. Oda, H. Mizuta

    Appl. Phys. Express.   Vol. 2 ( No. 9 )   095002 (3 pages)   2009.9

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  • Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5 K

    Gento Yamahata, Tetsuo Kodera, Hiroshi Mizuta, Ken Uchida, Shunri Oda

    APPLIED PHYSICS EXPRESS   2 ( 9 )   095002 (3 pages)   2009.9

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  • 26aXG-4 Transport property characterization of silicon coupled quantum dots

    Kodera T., Ferrus Thierry, Yamahata G., Nakaoka T., Williams David, Oda S., Arakawa Y.

    Meeting abstracts of the Physical Society of Japan   64 ( 2 )   594 - 594   2009.8

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  • Fine and Large Coulomb Diamonds in a Silicon Quantum Dot

    T. Kodera, T. Ferrus, T. Nakaoka, G. Podd, M. Tanner, D. Williams, Y. Arakawa

    Jpn. J. Appl. Phys   Vol. 48 ( No. 6 )   06FF15   2009.6

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  • Fine and Large Coulomb Diamonds in a Silicon Quantum Dot

    Tetsuo Kodera, Thierry Ferrus, Toshihiro Nakaoka, Gareth Podd, Michael Tanner, David Williams, Yasuhiko Arakawa

    JAPANESE JOURNAL OF APPLIED PHYSICS   48 ( 6 )   06FF15   2009.6

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  • Quantitative estimation of exchange interaction energy using two-electron vertical double quantum dots

    T. Kodera, K. Ono, Y. Kitamura, Y. Tokura, Y. Arakawa, S. Tarucha, K. Ono, Y. Kitamura, Y. Tokura, Y. Arakawa, S. Tarucha

    Phys. Rev. Lett.   Volume 102 ( 14 )   146802   2009.4

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  • Quantitative Estimation of Exchange Interaction Energy Using Two-Electron Vertical Double Quantum Dots

    T. Kodera, K. Ono, Y. Kitamura, Y. Tokura, Y. Arakawa, S. Tarucha

    PHYSICAL REVIEW LETTERS   102 ( 14 )   146802   2009.4

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  • Biexicitonic photocurrent induced by two-photon process at a telecommunication band

    T. Kodera, A. Suzuki, T. Miyazawa, H. Takagi, N. Kumagai, K. Watanabe, T. Nakaoka, Y. Arakawa

    Phys. Stat. Sol.C   Vol. 6 ( No. 6 )   1445 - +   2009.4

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  • Pauli-spin blockade in a vertical double quantum dot holding two to five electrons

    T. Kodera, K. Ono, S. Amaha, Y. Arakawa, S. Tarucha

    Journal of Physics: Conference Series   Vol. 150   022043   2009.3

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  • Pauli-Spin Blockade in a Vertical Double Quantum Dot Holding Two to Five Electrons

    T. Kodera, K. Ono, S. Amaha, Y. Arakawa, S. Tarucha

    25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 2   150   022043   2009

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  • Biexcitonic photocurrent induced by two-photon process at a telecommunication band

    Tetsuo Kodera, Ayako Suzuki, Toshiyuki Miyazawa, Hiroyuki Takagi, Naoto Kumagai, Katsuyuki Watanabe, Toshihiro Nakaoka, Yasuhiko Arakawa

    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 6   6 ( 6 )   1445 - +   2009

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  • Elastic and inelastic tunneling through one-electron and two-electron states in a vertical double quantum dot

    T. Kodera, K. Ono, S. Amaha, Y. Tokura, Y. Arakawa, S. Tarucha

    Phys. Stat. Sol. C   Vol. 5 ( No. 9 )   2854 - +   2008.5

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  • Singlet–triplet transition induced by Zeeman energy in weakly coupled vertical double quantum dots

    T. Kodera, K. Ono, S. Amaha, Y. Tokura, Y. Arakawa, S. Tarucha

    Physica E   Vol. 40 ( No. 5 )   1139 - 1141   2008.3

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  • Singlet-triplet transition induced by Zeeman energy in weakly coupled vertical double quantum dots

    Tetsuo Kodera, Keiji Ono, Shinichi Amaha, Yasuhiro Tokura, Yasuhiko Arakawa, Seigo Tarucha

    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES   40 ( 5 )   1139 - 1141   2008.3

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  • Elastic and inelastic tunneling through one-electron and two-electron states in a vertical double quantum dot

    T. Kodera, K. Ono, S. Amaha, Y. Tokura, Y. Arakawa, S. Tarucha

    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9   5 ( 9 )   2854 - +   2008

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  • 1.3μm帯光伝導測定によるg因子の見積もり

    小寺哲夫, 都木宏之, 都木宏之, 熊谷直人, 渡邊克之, 天羽真一, 中岡俊裕, 中岡俊裕, 樽茶清悟, 樽茶清悟, 樽茶清悟, 荒川泰彦, 荒川泰彦, 荒川泰彦

    日本物理学会講演概要集   63 ( 1 )   2008

  • 21aTA-13 Coherent transport through series double dots

    Tokura Y., Kubo T., Amaha S., Kodera T., Tarucha S.

    Meeting abstracts of the Physical Society of Japan   62 ( 1 )   691 - 691   2007.2

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  • 21aTA-8 Exchange energy in vertical double quantum dots

    Kodera T., Kitamura Y., Ono K., Amaha S., Tokura Y., Tarucha Y.

    Meeting abstracts of the Physical Society of Japan   62 ( 1 )   690 - 690   2007.2

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  • Lifting of spin blockade by hyperfine interaction in vertically coupled double quantum dots

    S. Tarucha, Yosuke Kitamura, Tetsuo Kodera, Keiji Ono

    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS   243 ( 14 )   3673 - 3677   2006.11

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  • Charge readout of a vertical quantum dot using a laterally weakly coupled quantum dot as a detector

    T. Kodera, Y. Iwai, W.G. van der Wiel, T. Obata, T. Hatano, S. Tarucha

    AIP Conference Proceedings   Vol. 850   1434 - +   2006.9

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  • 23aXL-9 Control of singlet-triplet spin state mixing in vertical double quantum dot devices

    Kiramura Y., Kodera T., Ono K., Tarucha S.

    Meeting abstracts of the Physical Society of Japan   61 ( 2 )   526 - 526   2006.8

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  • Lifting of spin blockade by hyperfine interaction in vertically coupled double quantum dots

    S. Tarucha, Y. Kitamura, T. Kodera, K. Ono

    Physica Status Solidi (b)   Vol. 243 ( 14 )   3673 - 3677   2006.7

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  • 29pXB-7 Microwave application effect under the condition of spin blockade in a double quantum dot

    Kodera T., Ono K., Kitamura Y., Tarucha S.

    Meeting abstracts of the Physical Society of Japan   61 ( 1 )   696 - 696   2006.3

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  • Semiconductor quantum dots for electron spin qubits

    WG van der Wiel, M Stopa, T Kodera, T Hatano, S Tarucha

    NEW JOURNAL OF PHYSICS   8   28   2006.2

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  • Semiconductor quantum dots for electron spin qubits

    W. G. van der Wiel, M. Stopa, T. Kodera, T. Hatano, S. Tarucha

    New J. Phys.   Vol. 8   28   2006.2

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  • Fabrication and characterization of quantum dot single electron spin resonance device

    T. Kodera, W.G. van, der Wiel, T. Maruyama, Y. Hirayama, S. Tarucha

    Proc. Int. Symp. on Mesoscopic Superconductivity and Spintronics 2004   445   2006.1

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  • Charge readout of a vertical quantum dot using a laterally weakly coupled quantum dot as a detector

    T. Kodera, Y. Iwai, W. G. van der Wiel, T. Obata, T. Hatano, S. Tarucha

    LOW TEMPERATURE PHYSICS, PTS A AND B   850   1434 - +   2006

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  • Fabrication and characterization of quantum dot single electron spin resonance device

    T. Kodera, W.G. van, der Wiel, T. Maruyama, Y. Hirayama, S. Tarucha

    Proc. Int. Symp. on Mesoscopic Superconductivity and Spintronics 2004   445   2006

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  • 19pWF-5 Charge detection in laterally coupled vertical quantum dots

    Kodera T., Iwai Y., Wiel W. G.van der, Obata T., Hatano T., Tarucha S.

    Meeting abstracts of the Physical Society of Japan   60 ( 2 )   522 - 522   2005.8

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  • 30aYA-8 Stability diagram and spin effect of laterally coupled vertical series dots

    Kodera T., Sasaki S., Wiel W. G. van der, Yamada K., Sato T., Maruyama T., Oto T., Tarucha S.

    Meeting abstracts of the Physical Society of Japan   59 ( 1 )   707 - 707   2004.3

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  • High-frequency manipulation of few-electron double quantum dots – toward spin qubits –

    T. Kodera, W.G. van der Wiel, K. Ono, S. Sasaki, T. Fujisawa, S. Tarucha

    Physica E   Vol. 22 ( 1-3 )   518 - 521   2004.2

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  • High-frequency manipulation of few-electron double quantum dots – toward spin qubits –

    T. Kodera, W.G. van der Wiel, K. Ono, S. Sasaki, T. Fujisawa, S. Tarucha

    Physica E   Vol. 22 ( 1-3 )   518 - 521   2004.2

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  • High-frequency manipulation of few-electron double quantum dots

    Kodera T., Wiel van der W. G., Ono K., Sasaki S., Tarucha S.

    Meeting abstracts of the Physical Society of Japan   58 ( 2 )   595 - 595   2003.8

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  • Photonl Assisted Tunneling in Single-electron Double Quantum Dot

    Ono K., Kodera T., Wiel W.G. van der, Fujisawa T., Tarucha S.

    Meeting abstracts of the Physical Society of Japan   57 ( 2 )   569 - 569   2002.8

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Presentations

  • Asymmetric Hole Spin Resonance Spectrum in Silicon Quantum Dot International conference

    S. I. Ibad, Y. Suzuki, M. Tadokoro, T. Futaya, S. Nishiyama, K. Kato, S. Murakami, T. Mori, R. Mizokuchi, J. Yoneda, T. Kodera

    2024.9 

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  • Blockade Lifetime of a Multi-hole Spin State in Silicon Quantum Dots International conference

    C. Kondo, R. Mizokuchi, G. Sakamoto, R. Tsuchiya, T. Mine, D. Hisamoto, H. Mizuno, J. Yoneda, T. Kodera

    2024 International Conference on Solid Devices and Materials (SSDM 2024)  2024.9 

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  • Design and characterization of an inductor-shunted matching circuit for radio-frequency reflectometry of a silicon quantum dot International conference

    S. Nishiyama, R. Matsuda, J. Kamioka, R. Mizokuchi, J. Yoneda, T. Kodera

    2024 International Conference on Solid Devices and Materials (SSDM 2024)  2024.9 

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  • Magnetic field dependence of resonant tunnelling between an InAs quantum dot and an InGaAs quantum dot

    QNSP2010  2010 

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  • Pauli Spin Blockade in a Lithographycally-defined Silicon Double Quantum Dot

    QNSP2010  2010 

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  • Pauli spin blockade in a lithographically-defined silicon double quantum dot

    International Symposium on Quantum Nanostructures and Spin-related Phenomena  2010 

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  • Removal of Surface Oxide Layer from Silicon Nanocrystals by HF Vapor Etching

    International Microprocesses and Nanotechnology Conference (MNC 2009)  2009 

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  • Phosphorous-Doping in Silicon Nanocrystals by using VHF Plasma

    G-COE PICE International Symposium on Silicon Nano Devices in 2030  2009 

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  • Direct Observation of Subband Structures in (110) pMOSFETs under High Magnetic Field: Impact of Energy Split Between Bands and Effective Masses on Hole Mobility

    IEDM2009  2009 

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  • Electron-phonon interaction in suspended Si double quantum dots

    International Microprocesses and Nanotechnology Conference (MNC 2009)  2009 

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  • Electron transport through coupled Si quantum dots toward quantum information devices

    G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists  2009 

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  • Magnetic field dependence of resonant tunneling between an InAs quantum dot and an InGaAs quantum dot

    International Symposium on Quantum Nanostructures and Spin-related Phenomena  2010 

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  • Fabrication and characterization of silicon double quantum dots towards spin qubits

    G-COE PICE International Symposium on Silicon Nano Devices in 2030:  2009 

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  • Suspended quantum dot devices for sensor or quantum bit applications

    G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists  2009 

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  • シリコン量子コンピュータ研究開発の動向 Invited

    小寺哲夫

    Q-STAR講演会  2024.6 

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  • Pauli spin blockade in a lithographically-defined silicon double quantum dot

    International Symposium on Quantum Nanostructures and Spin-related Phenomena  2010 

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  • Magnetic field dependence of resonant tunnelling between an InAs quantum dot and an InGaAs quantum dot

    QNSP2010  2010 

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  • Inelastic single-electron tunneling assisted by confined phonons observed for suspended silicon double quantum dots

    QDCAM2010  2010 

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  • Magnetic field dependence of resonant tunneling between an InAs quantum dot and an InGaAs quantum dot

    International Symposium on Quantum Nanostructures and Spin-related Phenomena  2010 

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  • Trends and Prospects of Silicon Quantum Bit Research Invited International conference

    T. Kodera

    2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),  2024.4 

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  • Pauli Spin Blockade in a Lithographycally-defined Silicon Double Quantum Dot

    QNSP2010  2010 

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  • Inelastic single-electron tunneling assisted by confined phonons observed for suspended silicon double quantum dots

    QDCAM2010  2010 

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  • InAs量子ドットとInGaAs量子井戸を内包した縦型ピラー構造の電気伝導特性

    第70回応用物理学会学術講演会  2009 

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  • トップゲートとサイドゲートによるシリコン結合量子ドットの静電結合制御

    第70回応用物理学会学術講演会  2009 

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  • Electron transport through coupled Si quantum dots toward quantum information devices

    G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists  2009 

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  • Direct Observation of Subband Structures in (110) pMOSFETs under High Magnetic Field: Impact of Energy Split Between Bands and Effective Masses on Hole Mobility

    IEDM2009  2009 

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  • Electron-phonon interaction in suspended Si double quantum dots

    International Microprocesses and Nanotechnology Conference (MNC 2009)  2009 

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  • Fabrication and characterization of silicon double quantum dots towards spin qubits

    G-COE PICE International Symposium on Silicon Nano Devices in 2030:  2009 

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  • Suspended quantum dot devices for sensor or quantum bit applications

    G-COE PICE International Symposium on Silicon Nano Devices in 2030: Prospects by World's Leading Scientists  2009 

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  • Removal of Surface Oxide Layer from Silicon Nanocrystals by HF Vapor Etching

    International Microprocesses and Nanotechnology Conference (MNC 2009)  2009 

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  • Phosphorous-Doping in Silicon Nanocrystals by using VHF Plasma

    G-COE PICE International Symposium on Silicon Nano Devices in 2030  2009 

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  • Quantum device fabrication toward germanium hole spin qubits International conference

    Y. Arakawa, C. Wen, R. Matsuoka, R. Mizokuchi, J. Yoneda, T. Kodera

    The 13th Workshop on Semiconductor/Superconductor Quantum Coherence Effect and Quantum Information  2024.9 

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  • Fabrication of Ge quantum devices possessing stable characteristics International conference

    C. Wen, R. Matsuoka, Y. Arakawa, R. Mizokuchi, J. Yoneda, T. Kodera

    CEMS Symposium on Quantum Information and Spintronics 2024  2024.12 

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  • Interplay of Electric Dipole Spin Resonance and Landau-Zener Interference on Hole Spin Resonance International conference

    S. I. Ibad, Y. Suzuki, M. Tadokoro, T. Futaya, S. Nishiyama, K. Kato, S. Murakami, T. Mori, R. Mizokuchi, J. Yoneda, T. Kodera

    CEMS Symposium on Quantum Information and Spintronics 2024  2024.12 

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  • Coherent control of a hole spin qubit in physically defined silicon quantum dots International conference

    S. I. Ibad, T. Futaya, Y. Suzuki, M. Tadokoro, S. Nishiyama, K. Kato, S. Murakami, T. Mori, R. Mizokuchi, J. Yoneda, T. Kodera

    International Conference on Physics and Technology of Advanced Materials (ICPTAM 2024)  2024.10 

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  • Proposal of Quantum Circuit Compiler Considering Qubit Connectivity and Addressability with Cross-Device Architecture Evaluation International conference

    M. Tadokoro, R. Matsuoka, T. Kodera

    The 6th International Conference on Spin-Based Quantum Information Processing(SpinQubit6)  2024.11 

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  • 二重量子ドットを流れる電流を用いた隣接シリコン量子ビット間の電荷ノイズ相関測定

    松岡 竜太郎, 松田 達也, 高橋 一斗, 土屋 龍太, 峰 利之, 久本 大, 水野 弘之, 溝口 来成, 小寺 哲夫, 米田 淳

    第85回応用物理学会秋季学術講演会  2024.9 

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  • バイポーラ型シリコン量子ドットの高周波反射測定

    松岡 竜太郎, 松田 達也, 高橋 一斗, 土屋 龍太, 峰 利之, 久本 大, 水野 弘之, 溝口 来成, 小寺 哲夫, 米田 淳

    第85回応用物理学会秋季学術講演会  2024.9 

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  • P型Si二重量子ドットにおける磁場に依存した量子キャパシタンスの評価

    和田 陸久, 溝口 来成, 近藤 知宏, 土屋 龍太, 峰 利之, 久本 大, 水野 弘之, 米田 淳, 小寺 哲夫

    第85回応用物理学会秋季学術講演会  2024.9 

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  • 並列量子ドットチャネルの電流同時測定に基づく電荷ノイズの相関評価

    松田 達也, 松岡 竜太郎, 高橋 一斗, 土屋 龍太, 峰 利之, 久本 大, 水野 弘之, 溝口 来成, 小寺 哲夫, 米田 淳

    第85回応用物理学会秋季学術講演会  2024.9 

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  • Research progress towards precise charge shuttling in silicon quantum dots International conference

    K. Takahashi, R. Matsuoka, T. Matsuda, R. Mizokuchi, T. Kodera, J. Yoneda

    The 13th Workshop on Semiconductor/Superconductor Quantum Coherence Effect and Quantum Information  2024.9 

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  • Research progress towards qubit operations using silicon hole spins International conference

    Y. Sato, S. I. Ibad, R. Mizokuchi, J. Yoneda, T. Kodera

    The 13th Workshop on Semiconductor/Superconductor Quantum Coherence Effect and Quantum Information  2024.9 

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  • バイポーラ型シリコン量子ドットにおける電荷ノイズ

    太田 俊輔, 近藤 知宏, 松岡 竜太郎, 松田 達也, 土屋 龍太, 峰 利之, 久本 大, 水野 弘之, 溝口 来成, 米田 淳, 小寺 哲夫

    第72回応用物理学会春季学術講演会  2025.3 

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  • 平面型シリコン量子ドットにおける電荷ノイズの電子数依存性

    溝口 来成, 和田 陸久, 松岡 竜太郎, 土屋 龍太, 峰 利之, 久本 大, 水野 弘之, 太田 俊輔, 米田 淳, 小寺 哲夫

    第72回応用物理学会春季学術講演会  2025.3 

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  • 半導体量子ビットの研究動向と展望 Invited

    小寺 哲夫

    第72回応用物理学会春季学術講演会  2025.3 

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  • 自己整合ゲートを持つFDSOI量子ドット中の正孔スピンにおけるコヒーレントなスピン制御の実現

    佐藤 優介, Sayyid Irsyadul Ibad, 土屋 龍太, 峰 利之, 久本 大, 水野 弘之, 溝口 来成, 米田 淳, 小寺 哲夫

    第72回応用物理学会春季学術講演会  2025.3 

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  • FDSOIシリコン量子ドットにおけるバケツリレー輸送電流の制御パルス依存性

    髙橋 一斗, 松岡 竜太郎, 松田 達也, 土屋 龍太, 峰 利之, 久本 大。水野, 弘之, 溝口 来成, 小寺 哲夫, 米田 淳

    第72回応用物理学会春季学術講演会  2025.3 

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  • RF reflectometry techniques for enhanced multiplexibitliy in silicon quantum dots International conference

    R. Mizokuch, S. Nishiyama, R. Matsuda, J. Kamioka, J. Yoneda, T. Kodera

    CEMS Symposium on Quantum Information and Spintronics 2024  2024.12 

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  • RF反射測定におけるIQ符号化条件の最適化

    根上 直也, 溝口 来成, 土屋 龍太, 峰 利之, 久本 大, 水野 弘之, 小寺 哲

    第72回応用物理学会春季学術講演会  2025.3 

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  • Study of interface trap density in Ge quantum devices

    2025.3 

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Research Projects

  • リコンフィギュアラブル量子極低温制御回路の創製

    Grant number:23K17327  2023.6 - 2027.3

    日本学術振興会  科学研究費助成事業  挑戦的研究(開拓)

    小寺 哲夫, 小林 正治, 三木 拓司, 米田 淳, 溝口 来成

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    Grant amount:\25740000 ( Direct Cost: \19800000 、 Indirect Cost:\5940000 )

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  • Exploring spin coherence engineering in group IV semiconductor quantum structures

    Grant number:23H05455  2023.4 - 2028.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Scientific Research (S)

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    Grant amount:\204230000 ( Direct Cost: \157100000 、 Indirect Cost:\47130000 )

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  • 単一飛行電子を用いた量子電子光学実験の基盤技術の開発

    Grant number:20H02559  2020.4 - 2024.3

    日本学術振興会  科学研究費助成事業 基盤研究(B)  基盤研究(B)

    高田 真太郎, 小寺 哲夫

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    Grant amount:\18200000 ( Direct Cost: \14000000 、 Indirect Cost:\4200000 )

    「GaAs/AlGaAs半導体二次元電子系における量子電子光学実験に向けた基盤技術の開発」に関しては、まずピコ秒スケールの電圧パルスを活用し、表面弾性波によって運ばれる単一電子の飛行中の位置分布を調べた。その結果、ある閾値を超える強度の表面弾性波で電子を移送することで、特定の表面弾性波のポテンシャル底を選び、電子を運べることを示した。現在は、その知見を利用し、結合量子細線に2個の電子を同期して注入し、クーロン相互作用を利用した位相制御器の実現に向けた実験に取り組んでおり、成果が出始めている状況である。また、初年度に技術開発を行った単一のポテンシャル底を持つ表面弾性波を用い、単一電子の移送実験を行った。その結果、99%を超える高い効率で単一電子の移送を行うことに成功した。
    「Si電子系における単一電子移送の実現」に関しては、初年度から継続し、より高強度な表面弾性波をSi電子系に導入するため、絶縁体膜や圧電帯膜の最適化に取り組んだ。現在は、新たに設計した膜構造の上に作製したIDTの評価を行っている。

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  • Elucidation and control of hole spin dynamics in quantum structures

    Grant number:20H00237  2020.4 - 2023.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A)  Grant-in-Aid for Scientific Research (A)

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    Grant amount:\45500000 ( Direct Cost: \35000000 、 Indirect Cost:\10500000 )

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  • Development and pioneering physics of devices with conduction carrier spins in diamond

    Grant number:18K18996  2018.6 - 2020.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research  Grant-in-Aid for Challenging Research (Exploratory)

    Tetsuo Kodera

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    Grant amount:\6240000 ( Direct Cost: \4800000 、 Indirect Cost:\1440000 )

    We have developed the basic technology to realize spin transport of conduction carriers in diamond quantum structures and to elucidate the fundamental physics related to the spin dynamics in the future. For device development, we examined and designed the device structures, and for the elucidation of physics, we promoted theoretical approaches such as discussions with domestic and foreign researchers and first-principles calculations, and deepened our understanding of electronic states. Regarding the construction of the measurement system, we successfully introduced a high-frequency system, and confirmed that the construction of this measurement system was correctly performed using silicon-based devices.

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  • シリコン量子ドット中のスピン状態に関する高速読み出し技術の開発と物理の解明

    Grant number:16F16806  2016.11 - 2019.3

    日本学術振興会  科学研究費助成事業 特別研究員奨励費  特別研究員奨励費

    小寺 哲夫, TYLAITE EGLE

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    Grant amount:\2300000 ( Direct Cost: \2300000 )

    本研究の目的は、スピン状態を高速に読み出す技術を開発し、シリコン量子ドット中のスピンコヒーレンスの物理を解明することにある。本研究により、スピン軌道相互作用の大きさを定量的に評価し、さらに電場や磁場に対するスピン軌道相互作用の大きさやスピン緩和時間の依存性を得ることを目指している。
    具体的には、MOS構造を利用したpチャネルの量子ドットを作製し、高速読み出しに使用する単正孔トランジスタを量子ドットの近傍に配置する。またスピンを高速に読み出すためのRF反射法を利用した測定系を構築し、既存のnチャネル量子ドットと対比させながら、新たに作製したpチャネル量子ドットにおけるスピンコヒーレンスに関わる物理を明らかにしていく。
    本年度は、研究実施計画に沿い、作製した素子の評価を進めると同時に、測定系の構築を進め、RF反射法による測定を開始した。
    2重量子ドットにおける正孔輸送特性の直接測定や、単正孔トランジスタによる電荷センシング測定に成功した。2重量子ドットにおける正孔輸送特性の直接測定では、スピンブロッケード現象を観測した。スピンブロッケード状態でわずかに流れるリーク電流の磁場依存性から、スピン軌道相互作用によってスピン緩和が起きていることを示唆する振る舞いが得られた。また、そのリーク電流の磁場依存性が、上部電極の電圧によって変調されることを観測した。電界によってスピン軌道相互作用を制御できている可能性がある。今後、スピン緩和時間やデコヒーレンス要因について調べることを目指し、RF反射法を用いた測定データの取得を行うことができた。

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  • Fabrication of NeoSilicon quantum information processing devices based on position control of silicon nano-dots and nanowires

    Grant number:26249048  2014.6 - 2017.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A)  Grant-in-Aid for Scientific Research (A)

    Oda Shunri, MILNE W. I., Williams D

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    Grant amount:\41860000 ( Direct Cost: \32200000 、 Indirect Cost:\9660000 )

    Size-control and position-control of silicon nanocrystals have been studied. A single nanocrystals have been located between 9 nm gap electrode and unique characteristics of Coulomb blockade were observed. Fabrication of Ge/Si core/shell nanowires have been optimized. Electrical measurements have revealed that this system is promising for high performance thermoelectric generation due to quantum effects. Coupled quantum dots integrated with a charge-sensor single-electron-transistor have been fabricated by electron beam lithography. A few electron regime and Paul spin blockade have been observed in double quantum dots and triple quantum dots structures as well as in p-type devices. This result is promising for future large scale integrated quantum bits application.

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  • Development of new structures of silicon quantum dots toward quantum spin information devices

    Grant number:26709023  2014.4 - 2018.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Young Scientists (A)  Grant-in-Aid for Young Scientists (A)

    Kodera Tetsuo, HORIBE Kosuke, YAMAOKA Yu, ANDREEV Aleksey, MIZOKUCHI Raisei

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    Grant amount:\24440000 ( Direct Cost: \18800000 、 Indirect Cost:\5640000 )

    The purpose of this research was to develop silicon quantum dots of new structure, to elucidate the physics of spin-based quantum computation and to realize basic technologies for hardware. In the future we aimed to fuse existing silicon technology and quantum computer. In physics, spin relaxation mechanism peculiar to silicon quantum dot structure, electron transport characteristics involving valleys and spins were clarified. As a technique, unique quantum dot structure using Si substrate or Si / SiGe hetero substrate was fabricated. We also developed a spin manipulation technique and detection method suitable for new structures of silicon quantum dots using Si MOS type quantum dots or SiGe hetero substrates type quantum dots.

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  • Development of silicon quantum dot devices toward quantum information transfer

    Grant number:26630151  2014.4 - 2016.3

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Challenging Exploratory Research  Grant-in-Aid for Challenging Exploratory Research

    Kodera Tetsuo, HORIBE Kosuke, NOGUCHI Tomohiro, ANDREEV Aleksey

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    Grant amount:\3900000 ( Direct Cost: \3000000 、 Indirect Cost:\900000 )

    We developed silicon quantum dot devices toward quantum optical communication in the future. We fabricated silicon coupled two quantum dots with different sizes and realized quantum states with different quantum energies in each quantum dot. We also realized stable silicon quantum dots using an ultrathin silicon layer. We demonstrated large charging energy of the quantum dots, which is desirable for the stability during application of photons.
    We published these achievements in several journals, international conferences, and domestic conferences.

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  • シリコン量子ビット実現に向けた要素技術の開発と関連物理の解明

    Grant number:24102703  2012.4 - 2014.3

    日本学術振興会  科学研究費助成事業 新学術領域研究(研究領域提案型)  新学術領域研究(研究領域提案型)

    小寺 哲夫

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    Grant amount:\11700000 ( Direct Cost: \9000000 、 Indirect Cost:\2700000 )

    本研究の目的は、シリコン量子ドット中の電子スピンを量子ビットとして用いる量子情報素子に関連する物理の解明と要素技術の実現である。将来的に量子情報処理と既存シリコンテクノロジーとの融合を目指すものである。今年度は、(1) 少数電子二重量子ドット素子作製・評価、(2) RF-SET読み出し技術の開発、(3) 物理解明、(4) 量子ドットに対する微小磁石効果を行う計画を立て、研究を推進した。
    (1) 少数電子二重量子ドット素子作製・評価:初年度の素子をさらに改良し少数電子シリコン二重量子ドットの作製を実現した。単電子状態の読み出しは、近傍に配置したSET電荷検出計によって行った。
    (2) RF-SET読み出し技術の開発:スピン状態のシングルショット読み出しを行うために、高速に電荷検出可能なRF-SET測定系の立ち上げを進めた。
    (3) 物理解明:少数電子単一量子ドットにおけるバレー分離の定量的な評価を行った。また、二重量子ドットにおいて、量子ドット間の準位差(デチューニング)やトンネル結合を操作することで、スピン操作を行うことができることを確認した。
    (4) 量子ドットに対する微小磁石効果:微小磁石により傾斜磁場が生成できることを、シミュレーションにより確認した。さらに傾斜磁場下で電子の位置を高周波電圧により振動させることで、実効的に回転磁場を生み出す方式を用いて、シリコン量子ドット内の電子スピンの回転操作を行う実験を進めた。電子スピンの回転により生じた可能性のあるピークを観測した。

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  • Fabrication of Nanoscale Devices and Circuits using DNA Origami Technology

    Grant number:24656201  2012

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Challenging Exploratory Research  Grant-in-Aid for Challenging Exploratory Research

    ODA Shunri, KODERA Tetsuo

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    Grant amount:\4030000 ( Direct Cost: \3100000 、 Indirect Cost:\930000 )

    DNA Origami technology is promising for the fabrication of nanoscale integrated devices, in which conventional lithography methods would face limitation. We studied formation of DNA Origami pattern on Si substrate and clarified that surface condition of Si substrate played a very important role. We found UV ozone treatment was effective to form DNA Origami pattern as designed. We also fabricated and characterized an integrated device of coupled quantum dots and an single electron transistor.

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  • Precise position control of silicon quantum dots and fabrication of quantum information devices.

    Grant number:22246040  2010 - 2012

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (A)  Grant-in-Aid for Scientific Research (A)

    ODA Shunri, KODERA Tetsuo

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    Grant amount:\48750000 ( Direct Cost: \37500000 、 Indirect Cost:\11250000 )

    We have fabricated silicon-based quantum dot devices by the combination of bottom-up and top-down technologies and studied for the application of quantum information devices. It has been clarified that a piezo-valve, raicalnitridation, and dip-coating methods are effective for controlling the size, the surface oxide layer, and integration of silicon nanocrystals, respectively. We have also fabricated a nanoscale devices integrated by coupled-quantum-dots and a charge sensor single-electron-transistor, and successfully controlled the number of a few electrons in the quantum dots.

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  • Development of electron spin qubits using silicon quantum dots

    Grant number:21710137  2009 - 2010

    Japan Society for the Promotion of Science  Grants-in-Aid for Scientific Research Grant-in-Aid for Young Scientists (B)  Grant-in-Aid for Young Scientists (B)

    KODERA Tetsuo

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    Grant amount:\4550000 ( Direct Cost: \3500000 、 Indirect Cost:\1050000 )

    The purpose of this work is to study physics and develop elemental technologies for realizing quantum information devices using electron spins in silicon quantum dots as qubits. We propose a novel device structure and its fabrication techniques for lithographically-defined silicon QDs. We successfully fabricated coupled QDs utilizing electron beam lithography, reactive ion etching, and oxidation, in a metal-oxide-semiconductor structure on a non-doped silicon-on-insulator substrate. We then succeeded in observing a single-electron regime in the QD and spin-related tunneling phenomena.

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  • 半導体量子ドット中の電子スピンを用いた量子計算に関わる物理と基本技術の研究。

    Grant number:05J11145  2005 - 2006

    日本学術振興会  科学研究費助成事業 特別研究員奨励費  特別研究員奨励費

    小寺 哲夫

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    Grant amount:\1800000 ( Direct Cost: \1800000 )

    本研究は、半導体量子ドット中の電子スピンを量子ビットとして用いる量子計算の物理の解明、ハードウェアのための基本技術の実現を目的とする。二電子スピン状態の制御には交換相互作用の制御が必要不可欠であり、本年度はその交換相互作用の定量的評価の研究に成功した。
    近年、縦型二重量子ドットにおいて、スピン三重項励起状態を作ることによってパウリ効果による安定状態ができること(パウリスピンプロッケード、P-SB)、この状態は超微細結合(HF)を介して時間的に除々に解消することが核磁気共鳴を用いて確認されている。さらに、横型二重量子ドットにおいて、P-SBにおけるHFを積極的に利用して単電子スピン状態や二電子スピン状態をコヒーレントに制御した実験が報告されている。
    我々は、HFを外部磁場やソースドレイン電圧V_<sd>により制御する方法を用いて、二電子スピン状態の交換エネルギーJの詳細を定量的に調べた。Jは2量子ドット間の準位差Δとトンネル結合2tの関数である。ΔはV_<sd>により制御し、2tはドット間バリア厚の異なるデバイスAとBを用いて関係を調べることが可能である。バリアが厚いデバイスAの実験では二つの三重項状態間の共鳴点付近でJの増大が観測された。これは三重項状態間の反交差によるJの増大を反映していると考えられる。この実験値は2p状態を取り入れたハバードモデルによる計算によって定量的に説明できる。また、核スピン揺らぎによる"一重項・三重項混合"とHFによる"一重項・三重項遷移"の共存をはじめて観測した。これは核スピン揺らぎのエネルギーとJが同程度の場合に起こる現象と考えられる。
    比較のため、デバイスBを用いて同様な実験を行った。ハバードモデルの計算を行い、実験的に見積もられたJと定量的な比較を行った。計算結果は実験データとよく一致した。共鳴点付近から非共鳴領域まで幅広い範囲でのJの定量的な議論が本研究ではじめてなされた。

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